TW201727710A - 成膜裝置 - Google Patents
成膜裝置 Download PDFInfo
- Publication number
- TW201727710A TW201727710A TW105130324A TW105130324A TW201727710A TW 201727710 A TW201727710 A TW 201727710A TW 105130324 A TW105130324 A TW 105130324A TW 105130324 A TW105130324 A TW 105130324A TW 201727710 A TW201727710 A TW 201727710A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- film forming
- film
- substrate
- wafer
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title abstract 9
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000015572 biosynthetic process Effects 0.000 claims description 55
- 238000010790 dilution Methods 0.000 claims description 38
- 239000012895 dilution Substances 0.000 claims description 38
- 238000012545 processing Methods 0.000 claims description 28
- 230000007246 mechanism Effects 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 abstract description 316
- 239000003085 diluting agent Substances 0.000 abstract description 21
- 239000010409 thin film Substances 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract 9
- 239000007789 gas Substances 0.000 description 260
- 238000000034 method Methods 0.000 description 28
- 238000011144 upstream manufacturing Methods 0.000 description 24
- 239000000463 material Substances 0.000 description 17
- 239000012495 reaction gas Substances 0.000 description 13
- 230000007423 decrease Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 8
- 239000002994 raw material Substances 0.000 description 6
- 238000011282 treatment Methods 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006298 dechlorination reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
提供可以使調整被形成在基板之薄膜的同心圓狀之膜厚分布的技術。對晶圓(W)之表面以使流量在寬度方向一致且單向流之方式供給成膜氣體。而且,從排列配置在成膜氣體之流動方向的複數稀釋氣體供給口(5),供給稀釋氣體,在成膜氣體之流動方向使成膜氣體之濃度連續性變化,在該氛圍中,一面使晶圓(W)旋轉,一面在晶圓(W)之表面進行成膜。因此,晶圓(W)上之薄膜之膜厚分布成為同心圓狀,調整從稀釋氣體供給口(5)供給的稀釋氣體之量,而調整成膜氣體之濃度分布,依此可以調整同心圓狀之膜厚分布。進一步,使成膜氣體之濃度在成膜氣體之流動方向連續性變化,故難以受到氣流混亂的影響,成膜氣體之濃度分布安定,因此針對被成膜的薄膜可以安定取得預定的膜厚分布。
Description
本發明係關於對基板供給成膜氣體而在表面成膜的技術。
隨著半導體裝置之圖案之微細化的要求,針對成膜、蝕刻等之製程有各種嚴格的要求。當以作為圖案之微細化之一被眾所皆知的雙圖案化為例時,該製程首先在矽氧化膜之圖案上形成薄膜,且在構成矽氧化膜之圖案的凸部之兩側壁上,藉由蝕刻形成被稱為側壁的膜。接著,將除去抗蝕層而剩下的側壁當作遮罩圖案而蝕刻基底膜形成硬遮罩。
為了使藉由側壁所生成的圖案成為良好者,薄膜之膜厚之面內均勻性和蝕刻裝置之蝕刻特性必須匹配。由於屬於蝕刻特性的蝕刻率之分布係例如基板之中央部的蝕刻率快,周緣部之蝕刻率慢等,被形成同心圓狀,故即使在成膜處理中,同心圓狀之膜厚分布也被要求。
作為成膜裝置,雖然使用噴淋頭從基板上供給成膜氣體之手法眾所皆知,但是在噴淋頭之孔之正下
方,出現涵蓋範圍或膜質不同的特異點。例如,有當欲使作為被處理基板之半導體晶圓(以下,稱為「晶圓」)旋轉而形成同心圓狀之薄膜之時,由於特異點,在晶圓形成圓形之不良部分的問題。
再者,以往為了取得同心圓狀之膜厚分布,藉由改變成膜裝置之處理容器之構造等之變更裝置構成而進行。但是,於成膜後,適當之同心圓狀之膜厚分布依基板處理之膜質或工程而不同。因此,在藉由裝置構成之變更調整同心圓狀之膜厚分布之情況下,必須按每膜質或工程使硬度最佳化,最佳化所需之時間或成本變大。
專利文獻1中記載有對成膜氣體之供給方向在寬度方向配置複數的氣體吐出部,且相對於成膜氣體之供給方向改變寬度方向之氣流之速度,藉由使晶圓旋轉,使晶圓之膜厚平坦化之技術。但是,於從側方供給成膜氣體而進行成膜之情況下,有下游側之氣流不安定,膜厚不安定之問題。
再者,在專利文獻2中,雖然記載著以不使晶圓旋轉之時的膜厚分布之坡度成為晶圓之徑向之方式進行調整,且使晶圓旋轉而取得同心圓狀之膜厚分布的技術,但是並非解決本發明之課題者。
[專利文獻1]日本特開2007-324286號公報
[專利文獻2]日本特開2006-173482號公報
本發明係鑒於如此之情形下而創作出,其目的在於提供可以調整被形成在基板之薄膜之同心圓狀之膜厚分布的技術。
本發明之成膜裝置之特徵為具備:處理容器,其形成真空氛圍;載置部,其係被設置在上述處理容器內,載置基板;加熱部,其係將被載置於上述載置部之基板,自從該載置部之載置面觀看時與基板相反側進行加熱;氣體供給部,其係被設置在被載置於上述載置部之基板之後方側,以沿著基板之表面而涵蓋該表面全體朝向該基板之前方側流動,同時氣流之寬度方向之氣體流量一致之方式,供給成膜氣體;旋轉機構,其係於對基板供給上述成膜氣體之時,用以使繞與該基板正交之軸的周圍旋轉;膜厚調整部,其係在上述載置部停止之狀態下觀看時,可以調整在上述成膜氣體之流動方向中之基板上之膜之膜厚分布;及排氣口,其係被設置在上述基板之前方側。
本發明係在對基板供給成膜氣體而進行成膜時,一面使基板旋轉一面以沿著基板在橫方向流動的單向流來供給成膜氣體,同時在成膜氣體之流動方向中,調整被成膜在基板之薄膜的膜厚分布。因此,可以調整同心圓狀之膜厚分布。
1‧‧‧處理容器
2‧‧‧載置台
21‧‧‧加熱部
4‧‧‧成膜氣體吐出部
5‧‧‧稀釋氣體供給口
20‧‧‧旋轉機構
25‧‧‧馬達
27‧‧‧皮帶
31‧‧‧排氣溝
55‧‧‧稀釋氣體調整部
圖1表示與第1實施形態有關之成膜裝置的縱剖側面圖。
圖2表示與第1實施形態有關之成膜裝置的俯視圖。
圖3為表示稀釋氣體供給路之上方側之構成的斜視圖。
圖4為表示與第1實施形態有關之成膜裝置之作用的示意圖。
圖5為表示成膜氣體之濃度分布的示意圖。
圖6為平面性表示成膜氣體之濃度分布的示意圖。
圖7為表示成膜氣體之濃度分布的示意圖。
圖8表示與第2實施形態有關之成膜裝置的縱剖側面圖。
圖9表示與第2實施形態有關之成膜裝置的俯視圖。
圖10表示與第3實施形態有關之成膜裝置的縱剖側
面圖。
圖11表示與第4實施形態有關之成膜裝置的縱剖側面圖。
圖12為表示本發明之實施形態之其他之例的縱剖側面圖。
圖13為表示與本發明之實施形態之其他例有關的高頻天線的俯視圖。
圖14為表示實施例1中之膜厚分布之設定值的說明圖。
圖15為表示實施例1中之膜之膜厚分布的特性圖。
圖16為表示實施例2中之膜厚分布之設定值的說明圖。
圖17為表示實施例2中之膜之膜厚分布的特性圖。
圖18為表示實施例3中之膜厚分布之設定值的說明圖。
圖19為表示實施例3中之膜之膜厚分布的特性圖。
作為與第1實施形態有關之成膜裝置,針對實施交互對基板供給原料氣體和反應氣體而疊層原子層或分子層進行成膜的所謂ALD(Atomic Layer Deposition)法的成膜裝置進行說明。如圖1所示般,成膜裝置具備處理容器1,
其係對作為基板之晶圓W進行成膜處理的真空容器。處理容器1具備有下方側部分11,其係在上方開口的圓筒部位,和以包圍該下方側部分11之上部之方式與下方側部分連接設置的角筒狀之上方側部分12。下方側部分11之內方側空間和上方側部分之內方側部分連通,且上方側部分12之內方側空間構成進行成膜處理的處理空間。在下方側部分11中之側壁面,設置有用以將晶圓W搬入搬出的搬入搬出口13,和開關該搬入搬出口13的閘閥14。
在處理容器1內配置載置台2,其係載置晶圓W的基板載置部。載置台2係被形成為例如由鋁等之金屬所構成之圓板狀,在載置台2之內部埋設有用以將晶圓W加熱至例如100℃~400℃之成膜溫度的加熱器21。在載置台2之側面和下方側部分11之側壁之間隙成為微小間隙,即是不會對載置台2之升降造成障礙之程度的間隙,被構成為藉由該載置台2,區劃出處理空間和下方側之空間。
在載置台2之下面側中央部,經由貫通被設置在處理容器1之底面的開口部15,且在上下方向延伸之軸部23而連接升降板24。在開口部15、軸部23之間,為了氣密區劃處理容器1之氛圍與外部,設置有軸部23被構成為可以升降、旋轉之軸承部16。在升降板24之上面設置馬達25,馬達25係經皮帶27被連接於軸部23。軸部23及載置台2係藉由利用馬達25使皮帶27旋轉,繞垂直軸周圍旋轉。馬達25及皮帶27構成旋轉機構
20。
再者,在升降板24之下面側,設置升降機構26,軸部23及載置台2係與升降板24成為一體,藉由升降機構26升降。載置台2係於對晶圓W供給成膜氣體而進行成膜處理之時,移動至例如晶圓W之表面成為與上方側部分12之內部底壁之上面大概相同高度之位置之圖1中以實線表示的處理位置。而且,載置台2係於與外部之搬運機構之間進行晶圓W之收授之時,從處理位置下降至下降位置,其係在圖1中以鏈線表示的搬入搬出位置。
接著,針對上方側部分12,也一面參照圖2一面進行說明。在上方側部分12之內部,於長度方向之一端側,例如從晶圓W觀看將左側、右側各視為前方側、後方側時,在晶圓W之前方側,設置有排氣溝31,其係在寬度方向,即是在左右方向延伸之橫剖面為角形的排氣口。排氣溝31係上面側在上方側部分12之底面開口。在排氣溝31之開口部分,設置有蓋部32,其係形成有在上部側部分12之寬度方向分別延伸,且在上部側部分12之長度方向排列的複數之縫隙33。在排氣溝31之底部中央,連接有排氣管34,在排氣管34中,從排氣溝31側起中介設置有壓力調整部35、排氣閥36,而被連接於無圖示之真空排氣泵。
再者,在上方側部分12之內部的後方側,被設置成以筒狀之構件所構成之成為氣體供給部的成膜氣體
吐出部4在左右延伸。在成膜氣體吐出部4,以朝向前方開口之方式,設置有成為在成膜氣體吐出部4之長度方向延伸之成膜氣體吐出口的縫隙41。該縫隙41係以在俯視下覆蓋晶圓W之全面之方式,形成較晶圓W之寬度尺寸長,且以成膜氣體通過晶圓W之表面全體之方式形成。
在成膜氣體吐出部4之長度方向中央,從後方連接有氣體供給管40,在該氣體供給管40合流供給原料氣體之原料氣體供給管42、供給與原料氣體反應之反應氣體的反應氣體供給管46及供給置換氣體的置換氣體供給管60。原料氣體供給管42之另一端側被連接於作為原料氣體的TiCl4供給源43。在原料氣體供給管42從TiCl4供給源43側起設置有流量調整部45和閥44。反應氣體供給管46之另一端側被連接於作為反應氣體之H2O供給源47,在反應氣體供給管46從H2O供給源47側起設置有流量調整部49和閥48。在該例中,原料氣體、反應氣體使用如「成膜氣體」之用語。再者,置換氣體供給管60之另一端側被連接於氮(N2)氣體供給源61,在置換氣體供給管60從N2氣體供給源61側起設置有流量調整部62和閥63。
如圖1所示般,在與載置台2相向之處理容器1之天井部,沿著前後方向,即是成膜氣體之流動方向,在複數處,例如以等間隔地在5處設置有用以供給調整成膜氣體之濃度的濃度調整用之氣體,例如作為稀釋氣體之氮氣的稀釋氣體供給口(包含開口部及連續於開口部
之供給路的一部分)5。各稀釋氣體供給口5係如圖2所示般在左右方向(成膜氣體之氣流之寬度方向)延伸,以在俯視觀看下覆蓋晶圓W之全面之方式,形成為在寬度方向延伸的縫隙狀。在該例中,在左右方向(成膜氣體之氣流之寬度方向)中之稀釋氣體供給口5之長度尺寸,設定成與被設置在成膜氣體吐出部4之縫隙41之左右方向(成膜氣體之氣流之寬度方向)中之長度尺寸相同的長度尺寸。
各稀釋氣體供給口5係如圖1所示般,形成有在上部側部分12之天井部分傾斜成稀釋氣體朝向前方(朝向排氣溝31側)傾斜地吐出的稀釋氣體供給路50。稀釋氣體供給路50被形成為在左右方向(成膜氣體之氣流之寬度方向)延伸,構成為稀釋氣體從各稀釋氣體供給口5朝向被載置在載置台2之晶圓W之上面於在寬度方向(左右方向)流量一致之狀態下被供給。
在各稀釋氣體供給路50之上側(上游側),如圖1、3所示般形成有在稀釋氣體之流動的寬度方向(左右方向)延伸的角筒狀的緩衝室5a。在緩衝室5a之上方側,設置有貫通緩衝室之天井面之中央部的連通路5b,各連通路5b之上端在處理容器1之上方開口。在各連通路5b之上端分別連接有稀釋氣體供給管51,在稀釋氣體供給管51之上游側端部分別設置有稀釋氣體供給源52。在各稀釋氣體供給管51從上游側起設置有流量調整部53,和閥54。流量調整部53及閥54相當於稀釋氣體調整部55。
接著,針對本發明之實施形態之作用進行說
明,首先作為被處理基板的晶圓W係藉由例如無圖示之外部之搬運臂被載置在載置台2上,藉由加熱器21被加熱。而且,閘閥14被關閉,處理容器1被密閉之後,例如開始從成膜氣體吐出部4供給N2氣體,從排氣溝31進行排氣,調整處理容器1內之壓力。接著,載置台2上升至處理位置。
之後藉由使用作為成膜氣體之作為原料氣體的TiCl4及作為反應氣體的H2O之ALD法,進行成膜處理。針對該些成膜氣體朝晶圓W的供給方法進行說明。如圖4所示般,於從排氣溝31進行排氣之狀態下,朝向載置台2上之晶圓W,開始成膜氣體之供給,同時從各稀釋氣體供給口5朝向晶圓W供給稀釋氣體。當成膜氣體從氣體供給管40流入成膜氣體吐出部4時,在成膜氣體吐出部4內均勻擴散。之後,從成膜氣體吐出部4之縫隙41,以在晶圓W之寬度方向(左右方向)一致的流量被供給,沿著晶圓W之表面,在整個全面流動。之後,在保持平行之流動之下,流入排氣溝31,從排氣管34被排氣。
圖5係表示成膜氣體之濃度的示意圖,圖5中之A~G係與圖4中之地點(位置)A~G對應。成膜氣體在成膜氣體之流動的上游側中之晶圓W之周緣部(後端部),即圖中地點A中,與從成膜氣體吐出部4被供給之氣體中之原料氣體及反應氣體之濃度為幾乎相同的濃度。而且,由於成膜氣體藉由對晶圓W之成膜處理而被消
耗,故在晶圓W之表面附近,隨著朝向前方向(排氣溝31側),即是越位於下游側,其濃度緩緩減少。而且,當示意性表達時,在於晶圓W之表面流動的成膜氣體和稀釋氣體合流之最上游側的地點B,成膜氣體之濃度被稀釋。被稀釋的成膜氣體進一步流動至前方側,接著在與稀釋氣體合流的地點C,進一步被稀釋,接著依地點D、E、F之順序一面被稀釋一面流至前方側。
因此,成膜氣體例如圖5所示之曲線圖表示般越位於下游側,濃度(原料氣體或反應氣體之濃度)越淡。此時,以在氣流之寬度方向使流量一致之方式供給成膜氣體,同時以在成膜氣體之寬度方向使流量一致之方式,從在成膜氣體之氣流的寬度方向延伸之縫隙狀之稀釋氣體供給口5供給稀釋氣體。而且,為了在成膜氣體之流動方向使成膜氣體之濃度變化,如圖6示意圖所示般,在成膜氣體之氣流的寬度方向,成膜氣體的濃度一致。圖6為示意性表示成膜氣體之流動方向之濃度分布的圖示。在圖6中,陰影線之密度越高表示越高濃度之成膜氣體分布的區域。
而且,驅動旋轉機構20,使晶圓W繞垂直軸周圍旋轉。圖6般之成膜氣體之濃度在寬度方向成為均勻,當於朝向一方向連續變化之氛圍中,使晶圓W旋轉時,晶圓W除中心(旋轉中心)以外之部位,在成膜氣體之濃度高的區域和低的區域之間重複移動。即是,當從晶圓W之各部位觀看時,重複氛圍之成膜氣體之濃度緩緩變
低,接著緩緩變高之狀態。當晶圓W轉一圈時,在離中心之距離相同的部位,由於通過相同的區域,故膜厚在周方向一致,其膜厚係因應該部位轉一圈之時的相對時間推移的濃度變化樣式而決定。因此,在晶圓W之表面中被成膜的薄膜,持有同心圓狀之膜厚分布,藉此其膜厚分布係藉由在晶圓W之表面附近的成膜氣體之流動方向中之濃度分布而決定。如上述般,由於成膜氣體之濃度分布藉由從各稀釋氣體供給口5被供給之稀釋氣體所致的稀釋之程度而決定,故藉由稀釋氣體調整部55,使從各稀釋氣體供給口5被供給之稀釋氣體之流量變化,依此可以調整成膜氣體之濃度分布。
針對調整從各稀釋氣體供給口5被供給之稀釋氣體,形成例如圖5之曲線圖中點線所示般,相對於從縫隙41的距離,成膜氣體之濃度直線性減少般之濃度分布之情況,進行說明。在如此之濃度分布之情況下,相對於晶圓W之中心部中之成膜速度,當通過較晶圓W之中心更靠成膜氣體之流動的上游側時,成膜速度變快,於通過下游側之時成膜速度變慢。而且,由於曲線圖之傾斜為直線,故在上游側之成膜速度之上升量,和在下游側之成膜速度的下降量變成相等。因此,從後述之實施例可知,當晶圓W之中心附近的區域轉一圈時被成膜的膜厚,和晶圓W之中心附近的區域轉一圈時被成膜的膜厚成為略相同的膜厚,故晶圓W之表面之膜厚被均勻成膜。
再者,使從稀釋氣體供給口5供給的稀釋氣
體之供給量從上游側到下游側緩緩變多,藉此如圖5之曲線圖中以實線所示般在上游側成膜氣體之濃度的減少為小,在下游側成膜氣體之濃度的減少為大。在如此之成膜氣體的濃度分布中,例如在從圖5中地點C到地點E為止之範圍所示之靠晶圓W之中心的區域,比起圖5中點線,濃度之上升大,形成僅有濃度之上升量厚的膜。對此,從地點A至C及從地點E至F之相對於圖5中點線的濃度之上升量,較從地點C至地點E之範圍中的比起圖5中點線的濃度之上升量小。晶圓W之周緣側之部位雖然一面在地點A至地點G之範圍移動,一面被成膜,但是在通過從地點A至C及從地點E至F之時,比起從圖5中地點C至地點E為止之範圍,成膜速度下降。因此,晶圓W之靠周緣之位置較靠中心之位置難以被成膜,在晶圓W形成中心部之膜厚厚,周緣部之膜厚薄的同心圓狀之膜厚分布。
再者,藉由上游側之稀釋氣體供給口5,例如越是朝圖4中地點B、地點C供給稀釋氣體之稀釋氣體供給口5,使氣體吐出量越多,朝下游側之稀釋氣體供給口5,例如越是朝圖4中地點E、地點F供給稀釋氣體的稀釋氣體供給口5,使氣體之吐出量越少,如圖7之曲線圖所示般,成為在上游側,成膜氣體之濃度之下降大,在下游側,成膜氣體之濃度的下降小的濃度分布。在如此之成膜氣體的濃度分布中,例如在從圖7中地點C到地點E為止之範圍所示之靠晶圓W之中心的區域,比起圖7中
點線濃度低,薄膜僅有濃度之下降量變薄。對此,在周緣側之區域中,從地點A至C及從地點E至F之相對於圖7中點線的濃度之下降量,較從地點C至地點E之範圍中的比起圖7中點線的濃度之下降量小。因此,在通過從地點A至C及從地點E至F之時,比起從圖7中地點C至地點E之範圍,成膜速度上升。因此,晶圓W之靠周緣之位置較靠中心之位置容易被成膜,在晶圓W形成中心部之膜厚薄,周緣部之膜厚厚的同心圓狀之膜厚分布。
因此,藉由稀釋氣體調整部55,調整稀釋氣體之流量,依此可以調整成膜氣體之濃度分布,且可以調整被成膜在晶圓W之膜的膜厚。因此,稀釋氣體調整部55相當於膜厚調整部。
如此一來,將成膜氣體以使流量在寬度方向一致之方式供給至晶圓W之表面,且在成膜氣體之流動方向使成膜氣體之濃度連續性變化。氣流在於晶圓W之表面的成膜氣體之尤其是下游側容易成為混亂。因此,相對於成膜氣體之流動方向,寬度方向即使容易混合成膜氣體,欲在成膜氣體之流動之寬度方向賦予成膜氣體的濃度差,亦難以維持濃度差。對此,針對成膜氣體之流動方向,形成朝向一方的流動,在成膜氣體流動方向難以混合成膜氣體。因此,藉由在成膜氣體之流動方向使成膜氣體之濃度連續性變化,朝向一方向維持成膜氣體之濃度差的氛圍安定被形成。
當返回說明至成膜處理時,在藉由ALD法進
行的成膜處理中,首先供給作為原料氣體之TiCl4氣體例如1秒而關閉閥44,於晶圓W表面使吸附TiCl4。接著,對處理容器1供給置換氣體(N2氣體)而對處理容器1內進行置換。接著,當對處理容器1供給反應氣體(H2O氣體)時,藉由加水分解及脫氯化反應,在晶圓W之表面形成TiO2膜之分子膜。之後,對處理容器1供給置換氣體而對處理容器1進行置換。如此一來在處理容器1內,藉由重複複數次供給包含TiCl4之原料氣體→置換氣體→反應氣體→置換氣體的循環,疊層TiCl4之分子層,進行事先設定之特定厚度的TiO2膜之成膜。
若藉由上述實施形態時,在對晶圓W之表面供給成膜氣體而進行成膜的成膜裝置中,對晶圓W之表面以使流量在寬度方向一致且單向流之方式供給成膜氣體。而且,從排列配置在成膜氣體之流動方向的複數稀釋氣體供給口5,供給稀釋氣體,在成膜氣體之流動方向使成膜氣體之濃度連續性變化,在該氛圍中,一面使晶圓W旋轉,一面在晶圓W之表面進行成膜。
因此,晶圓W上之薄膜之膜厚分布成為同心圓狀,調整從稀釋氣體供給口5供給的稀釋氣體之量,而調整在成膜氣體之流動方向中之濃度分布,依此可以調整同心圓狀之膜厚分布。進一步,使成膜氣體之濃度在成膜氣體之流動方向連續性變化,故難以受到氣流混亂的影響,成膜氣體之濃度分布安定,因此針對被成膜的薄膜可以安定取得預定的膜厚分布。而且,藉由取得與蝕刻裝置之面內傾
向對應的膜厚分布,蝕刻處理後之面內均勻性成為良好。
再者,供給至在晶圓W之表面的成膜氣體之流動的濃度分布調整用之氣體並不限定於惰性氣體等之稀釋氣體,例如即使供給以惰性氣體稀釋包含前軀體之原料氣體的氣體,調整成膜氣體之濃度亦可。再者,即使從圖1中之稀釋氣體供給口5供給成膜氣體以取代稀釋氣體,且調整成膜氣體之濃度亦可。當從成膜氣體吐出部4被吐出之成膜氣體在成膜氣體之流動的寬度方向中,最大流量和最少流量之差為±10%之範圍,例如將成膜氣體之平均流速設為1000毫升/分鐘時,在於±100毫升/分鐘之範圍之情況下,可充分取得效果,可以看作成膜氣體之流量在成膜氣體之流動的寬度方向一致。
晶圓W作為靜止,作為調整在成膜氣體之流動方向觀看到的膜厚分布之手法,並不限定於調整在流動方向之成膜氣體之濃度分布。例如,即使為使晶圓W之加熱溫度之分布變化而使在成膜氣體之流動方向的成膜速度變化的成膜裝置亦可。第2實施形態係如此之手法,例如使用圖8所示之成膜裝置。當針對該成膜裝置之構成予以敘述時,在載置台2之內部空間,在從載置台2之內面間隔開之狀態下設置圓板狀之加熱板200。再者,在軸部23之內部,在從軸部之內面間隔開之狀態下設置中心軸201。而且,將加熱板200經由中心軸201固定在升降板24。
在加熱板200之內部,如圖9所示般,於成膜氣體之流動方向排列埋設有在與成膜氣體之流動方向正交之方向,即是寬度方向延伸的構成溫度調整部之棒狀的加熱器202。各加熱器202被構成為可以藉由電力供給部205互相獨立調整溫度。另外,在圖8中,省略一部分而記載電力供給部205。
針對與第2實施形態有關之成膜裝置之作用進行說明。在載置台2載置晶圓W之後,藉由被連接於各加熱器202之電力供給部205,例如將相對於成膜氣體之流動為最上游側之加熱器202設定成最高溫度,且設定成越朝下游側加熱器202之溫度越低而開始加熱。在此狀態下,當在晶圓W之表面流通成膜氣體時,由於相對於成膜氣體之流動越上游側,為越適合成膜的溫度,故晶圓W之膜厚被形成較厚,隨著朝向下游側,膜厚變薄。而且,使晶圓W旋轉時,具備有加熱器202之加熱板200由於被設置成從載置台2間隔開,且被固定在中心軸201,故不旋轉。此時雖然晶圓W一面藉由加熱器202被加熱一面旋轉,但是延遲晶圓W之旋轉速度且在晶圓W之表面,一面維持從成膜氣體之流動之上游側朝向下游側溫度變低的溫度坡度,一面進行旋轉。依此,若以槪略的講法,則係在保持越是成膜氣體之流動之上游側,成膜速度越快,隨著朝向下游側,成膜速度越慢的狀態之下,晶圓W旋轉。因此,在晶圓W形成同心圓狀之膜厚分布的膜。因此,可以藉由以各電力供給部205設定的各加熱器
202的溫度,調整被成膜的膜厚。
再者,在將相對於成膜氣體之流動為最上游側之加熱器202設定成最高的溫度,且設定成越朝下游側加熱器202之溫度越低,使晶圓W旋轉而進行成膜之時,即使使晶圓W間歇性旋轉亦可。例如,交互重複使晶圓W停止0.5秒之工程,和使晶圓W繞垂直軸周圍旋轉50°之工程,而進行成為膜處理。藉由構成為如此,由於可以在於晶圓W之表面形成從成膜氣體之流動之上游側朝向下游側溫度變低之溫度坡度之狀態下,使晶圓W旋轉而進行成膜,故可以取得相同之效果。
再者,成膜氣體由於隨著在晶圓W的表面流動而被消耗,故隨著朝向下游側,濃度變低。因此,假設在與成膜氣體之流動方向不同的方向,例如正交之方向上形成溫度分布時,即使成為相同溫度的區域,也會在所成膜的膜厚上出現差異。因此,如第2實施形態般,在成膜氣體之流動的方向形成晶圓W之溫度分布的手法為有效。
接著,針對與第3實施形態有關之成膜裝置進行說明。該成膜裝置係如圖10所示般,在載置台2之上方設置構成對向面部的天板部8。而且,將天板部8構成為以在晶圓W之中心部之上方於左右方向(成膜氣體之流動的寬度方向)延伸的中心軸80為中心旋轉,且可變更傾斜。
在晶圓W之表面流動的成膜氣體之流速係當晶圓W之表面和天板部之高度尺寸長時變慢,當高度尺寸短時變快。而且,成膜氣體之流速快的區域成膜速度變慢,成膜氣體之流速慢的區域成膜速度變快。再者,於擔心氣流的混亂之情況下,若使天板部8延伸至成膜氣體吐出部4之上方即可。因此,在該狀態下,藉由使晶圓W旋轉,可以調整在晶圓W被成膜的同心圓之膜厚分布。
針對與第4實施形態有關之成膜裝置進行說明。如圖11所示般,在晶圓W之上方,相對於成膜氣體之流動方向,以在寬度方向延伸,且在成膜氣體之流動方向排列之方式,於與載置部2相向之相向面部的天板部90埋設棒狀之加熱器9。而且,例如將下游側之加熱器9設定成高的溫度,設定成越是上游側之加熱器9越低溫度。
依此,一面藉由各加熱器9進行加熱,一面供給原料氣體時,原料氣體藉由加熱器9之熱,吸附於天板部90。各加熱器9係由於越是下游側之加熱器9成為越高溫度,故越下游側原料氣體對天板部90的吸附量變多,其結果,被成膜在天板部90之速度變快。因此,因應在氣體之流動方向中原料氣體朝天板部90之吸附量的分布,在晶圓W之表面,越下游側原料氣體之吸附量減少,成膜速度變慢。因此,藉由使晶圓W旋轉,可以在晶圓W成膜持有同心圓狀之膜厚分布的膜。可以調整在
晶圓W之表面之從成膜氣體上游側朝向下游側之濃度的傾斜,且可以調整被成膜在晶圓W之同心圓狀之膜厚分布。
還有,即使本發明使用於使原料氣體在氣相中分解或與反應氣體反應之CVD(Chemical Vapor Deposition)裝置亦可。而且,即使為使用電漿進行成膜處理的成膜裝置亦可。例如,如圖12所示般,在圖8所示之成膜裝置中,在晶圓W之上方將例如以石英板等被構成的介電體窗91以氣密區隔其上方的大氣氛圍和處理容器1內之真空氛圍之方式,與載置台2相向設置。再者,在介電體窗91之上方,以在與成膜氣體之流動之方向正交之方向(寬度方向)延伸之方式載置例如4根線狀之高頻天線92。高頻天線92係如圖13所示般,例如相對於成膜氣體之流動之方向,互相連接上游側之兩根的兩端,且下游側之兩根的兩端也同樣互相連接。將上游側之兩根之高頻天線92之束,和下游側之兩根的高頻天線92之束互相連接長度方向之兩端。而且,構成為在4根之束的長度方向一端側設置端子93,且可以連接於高頻電源,則接地另一方側的端部即可。在如此之使用電漿的成膜裝置中,例如一面將氧連續性地供給至處理容器11,一面間歇性地供給原料氣體(TiCl4氣體)。而且,停止原料氣體之供給時,藉由對高頻天線92供給高頻電流,以在晶圓W之上方形成感應電磁場,且使氧電漿化,而進行成膜處理。
為了驗證本發明之實施形態之效果,故進行以下之試驗。
朝向300mm晶圓之表面從水平方向供給成膜氣體,且在停止晶圓W之狀態下,進行成膜處理之時所成膜的膜之膜厚分布,設定成從成膜氣體之流動之上游側朝向下游側直線性減少之情況下,藉由模擬求出使晶圓W旋轉而進行成膜之時的晶圓之表面之膜厚分布。
除了將在停止晶圓W之狀態下進行成膜處理之時所成膜之膜的膜厚分布,設定成在成膜氣體之流動的上游側緩緩減少,在下游側大幅度減少之外,其他與實施例1同樣進行處理。
除了在停止晶圓W之狀態下進行成膜處理之時所成膜之膜的膜厚分布,設定成在成膜氣體之流動的上游側大幅度減少,在下游側緩緩減少之外,其他與實施例1同樣進行處理。
圖14係表示在實施例1中設定的停止晶圓W之狀態下進行成膜之情況下的膜厚分布,圖15係針對在
實施例1中所成膜的膜,橫軸表示晶圓W之直徑的從中心部起的距離,縱軸表示膜厚的特性圖。
再者,圖16係表示在實施例2中設定的不使晶圓W旋轉而進行成膜之情況下的膜厚分布,圖17係針對在實施例2中所成膜的膜,橫軸表示晶圓W之直徑的從中心部起的距離,縱軸表示膜厚的特性圖。
而且,圖18係表示在實施例3中設定的不使晶圓W旋轉而進行成膜之情況下的膜厚分布,圖19係針對在實施例1中被成膜的膜,橫軸表示晶圓W之直徑的從中心部起的距離,縱軸表示膜厚的特性圖。
若藉由該結果,如圖14、圖15,在停止晶圓W之狀態下,進行成膜處理之時所成膜的膜之膜厚分布,從成膜氣體之流動的上游側朝向下游側直線性減少之情況下,使晶圓W旋轉而進行成膜,依此取得膜厚之面內均勻性高的膜,針對實施例1,σ1之值為0.1%。
再者,可知如圖16、圖17所示般,在實施例2中,形成晶圓W之中心附近之膜厚厚,周緣部之膜厚薄的凸型之膜,如圖18、圖19所示般,在實施例3中,形成晶圓W之中心附近之膜厚薄且周緣部之膜厚厚的凹型之膜。
若藉由該結果時,可以說在本發明中,藉由調整成不使晶圓W旋轉而進行成膜處理之時所成膜的膜之膜厚分布在成膜氣體之流動方向變化,可以調整於使晶圓W旋轉而進行成膜之時所形成的同心圓狀之膜厚分
布。
1‧‧‧處理容器
2‧‧‧載置台
4‧‧‧成膜氣體吐出部
5‧‧‧稀釋氣體供給口
5a‧‧‧緩衝室
5b‧‧‧連通路
11‧‧‧下方側部分
12‧‧‧上方側部分
13‧‧‧搬入搬出口
14‧‧‧閘閥
15‧‧‧開口部
16‧‧‧軸承部
20‧‧‧旋轉機構
21‧‧‧加熱部
23‧‧‧軸部
24‧‧‧升降板
25‧‧‧馬達
26‧‧‧升降機構
27‧‧‧皮帶
31‧‧‧排氣溝
32‧‧‧蓋部
33‧‧‧縫隙
34‧‧‧排氣管
35‧‧‧壓力調整部
36‧‧‧排氣閥
40‧‧‧氣體供給管
41‧‧‧縫隙
42‧‧‧原料氣體供給管
43‧‧‧TiCl4供給源
44‧‧‧閥
45‧‧‧流量調整部
46‧‧‧反應氣體供給管
47‧‧‧H2O供給源
48‧‧‧閥
49‧‧‧流量調整部
50‧‧‧稀釋氣體供給路
51‧‧‧稀釋氣體供給管
52‧‧‧稀釋氣體供給源
53‧‧‧流量調整部
54‧‧‧閥
55‧‧‧稀釋氣體調整部
60‧‧‧置換氣體供給管
61‧‧‧氮(N2)氣體供給源
62‧‧‧流量調整部
63‧‧‧閥
W‧‧‧晶圓
Claims (6)
- 一種成膜裝置,其特徵在於具備:處理容器,其係形成真空氛圍;載置部,其係被設置在上述處理容器內,載置基板;加熱部,其係將被載置於上述載置部之基板,自從該載置部之載置面觀看時與基板相反側進行加熱;氣體供給部,其係被設置在被載置於上述載置部之基板之後方側,以沿著基板之表面而涵蓋該表面全體朝向該基板之前方側流動,同時氣流之寬度方向之氣體流量一致之方式,供給成膜氣體;旋轉機構,其係於對基板供給上述成膜氣體之時,用以使繞與該基板正交之軸的周圍旋轉;膜厚調整部,其係在上述載置部停止之狀態下觀看時,可以調整在上述成膜氣體之流動方向中之基板上之膜之膜厚分布;及排氣口,其係被設置在上述基板之前方側。
- 如請求項1所載之成膜裝置,其中上述膜厚調整部係與上述基板相向而被設置,為了調整成膜氣體之流動方向中之成膜氣體之濃度分布,對成膜氣體之氣流供給濃度調整用氣體的濃度調整用氣體供給部。
- 如請求項2所載之成膜裝置,其中上述濃度調整用氣體供給部各被構成為在上述氣流之寬度方向延伸,且在上述氣流的流動方向設置複數吐出作 為濃度調整用氣體之稀釋氣體的氣體吐出口而構成。
- 如請求項1所載之成膜裝置,其中上述膜厚調整部係在從上述載置部之載置面觀看時與基板相反側,被設置成與該載置部不同個體地於該載置部之旋轉時成為靜止狀態,且調整在成膜氣體之流動方向中之基板之溫度分布的溫度調整部。
- 如請求項1所載之成膜裝置,其中上述膜厚調整部具備隔著成膜氣體之氣流形成空間與上述載置部相向之相向面部,和為了使成膜氣體之流動方向中之成膜氣體的濃度變化,調整基板之前後方向中的基板和上述相向面部之間隔距離的變化樣式的調整機構。
- 如請求項1所載之成膜裝置,其中上述膜厚調整部係隔著成膜氣體之氣流形成空間與上述載置部相向之相向面部,和為了使成膜氣體附著於上述相向面部,而使成膜氣體之流動方向中之成膜氣體的濃度變化,調整成膜氣體之流動方向中之上述相向面部之溫度分布的調整機構。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-190007 | 2015-09-28 | ||
JP2015190007A JP6707827B2 (ja) | 2015-09-28 | 2015-09-28 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201727710A true TW201727710A (zh) | 2017-08-01 |
TWI707384B TWI707384B (zh) | 2020-10-11 |
Family
ID=58408564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105130324A TWI707384B (zh) | 2015-09-28 | 2016-09-20 | 成膜裝置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US10519548B2 (zh) |
JP (1) | JP6707827B2 (zh) |
KR (2) | KR101928969B1 (zh) |
TW (1) | TWI707384B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102584230B1 (ko) * | 2018-08-09 | 2023-10-04 | 도쿄엘렉트론가부시키가이샤 | 성막 장치 및 성막 방법 |
JP7238350B2 (ja) * | 2018-11-12 | 2023-03-14 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP7236953B2 (ja) * | 2019-08-05 | 2023-03-10 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
KR102074924B1 (ko) | 2019-08-08 | 2020-02-07 | 주식회사 글로벌제조혁신네트웍 | 스마트팩토리 원격협업 cms시스템 및 그 구동방법 |
KR102086451B1 (ko) | 2019-09-06 | 2020-05-29 | 주식회사 글로벌제조혁신네트웍 | 증강현실 상의 스마트팩토리 원격협업 cms 시스템 및 그 구동방법 |
FI128855B (en) * | 2019-09-24 | 2021-01-29 | Picosun Oy | FLUID DISTRIBUTOR FOR THIN FILM GROWING EQUIPMENT, RELATED EQUIPMENT AND METHODS |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61130486A (ja) | 1984-11-28 | 1986-06-18 | Fujitsu Ltd | 気相成長装置 |
JP3067490B2 (ja) * | 1993-10-08 | 2000-07-17 | 東芝機械株式会社 | 加熱装置 |
US6427622B2 (en) * | 1998-08-28 | 2002-08-06 | Mv Systems, Inc. | Hot wire chemical vapor deposition method and apparatus using graphite hot rods |
US6331212B1 (en) | 2000-04-17 | 2001-12-18 | Avansys, Llc | Methods and apparatus for thermally processing wafers |
US6902622B2 (en) * | 2001-04-12 | 2005-06-07 | Mattson Technology, Inc. | Systems and methods for epitaxially depositing films on a semiconductor substrate |
US7396563B2 (en) * | 2002-05-23 | 2008-07-08 | Sixtron Advanced Materials, Inc. | Ceramic thin film on various substrates, and process for producing same |
JP2006173482A (ja) | 2004-12-17 | 2006-06-29 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP2006245318A (ja) | 2005-03-03 | 2006-09-14 | Sumitomo Electric Ind Ltd | サセプタおよび気相成長装置 |
JP5069424B2 (ja) | 2006-05-31 | 2012-11-07 | Sumco Techxiv株式会社 | 成膜反応装置及び同方法 |
JP2007335800A (ja) | 2006-06-19 | 2007-12-27 | Toyota Motor Corp | 半導体薄膜の製造方法および製造装置 |
JP4899958B2 (ja) | 2007-03-19 | 2012-03-21 | 日立電線株式会社 | 成膜方法及び成膜装置 |
DE102007027704A1 (de) * | 2007-06-15 | 2008-12-18 | Aixtron Ag | Vorrichtung zum Beschichten von auf einem Suszeptor angeordneten Substraten |
CN102041486A (zh) * | 2009-10-23 | 2011-05-04 | 周星工程股份有限公司 | 基板处理设备 |
JP2011171325A (ja) | 2010-02-16 | 2011-09-01 | Stanley Electric Co Ltd | 窒化物半導体結晶膜成長装置及び窒化物半導体結晶膜の製造方法 |
JP5655199B2 (ja) | 2010-09-06 | 2015-01-21 | 学校法人東京理科大学 | 半導体薄膜製造装置及び窒化物半導体の製造方法 |
DE102011055061A1 (de) * | 2011-11-04 | 2013-05-08 | Aixtron Se | CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor |
JP5857896B2 (ja) | 2012-07-06 | 2016-02-10 | 東京エレクトロン株式会社 | 成膜装置の運転方法及び成膜装置 |
TWI563542B (en) * | 2014-11-21 | 2016-12-21 | Hermes Epitek Corp | Approach of controlling the wafer and the thin film surface temperature |
-
2015
- 2015-09-28 JP JP2015190007A patent/JP6707827B2/ja active Active
-
2016
- 2016-09-20 TW TW105130324A patent/TWI707384B/zh active
- 2016-09-22 KR KR1020160121481A patent/KR101928969B1/ko active IP Right Grant
- 2016-09-22 US US15/272,503 patent/US10519548B2/en active Active
-
2018
- 2018-12-07 KR KR1020180156839A patent/KR102036462B1/ko active IP Right Grant
-
2019
- 2019-10-25 US US16/663,698 patent/US11377739B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170088950A1 (en) | 2017-03-30 |
JP2017066438A (ja) | 2017-04-06 |
KR102036462B1 (ko) | 2019-10-24 |
KR20180134320A (ko) | 2018-12-18 |
US11377739B2 (en) | 2022-07-05 |
US20200056285A1 (en) | 2020-02-20 |
KR101928969B1 (ko) | 2018-12-13 |
US10519548B2 (en) | 2019-12-31 |
TWI707384B (zh) | 2020-10-11 |
KR20170037832A (ko) | 2017-04-05 |
JP6707827B2 (ja) | 2020-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW201727710A (zh) | 成膜裝置 | |
US11118265B2 (en) | Film deposition method and computer program storage medium | |
JP5141607B2 (ja) | 成膜装置 | |
US8282735B2 (en) | Atomic layer deposition apparatus | |
KR101425253B1 (ko) | 성막 장치, 성막 방법 및 컴퓨터 판독 가능한 기억 매체 | |
KR101991574B1 (ko) | 성막 장치, 및 그것에 이용하는 가스 토출 부재 | |
WO2014168096A1 (ja) | 回転型セミバッチald装置およびプロセス | |
US11047044B2 (en) | Film forming apparatus and film forming method | |
JP2017078223A (ja) | Pealdによりトレンチに誘電体膜を堆積する方法 | |
TWI721227B (zh) | 成膜裝置及成膜方法 | |
US10472719B2 (en) | Nozzle and substrate processing apparatus using same | |
KR101649783B1 (ko) | 성막 방법 | |
KR101398949B1 (ko) | 기판처리장치 | |
US20130153149A1 (en) | Substrate Processing Tool with Tunable Fluid Flow | |
US8419855B2 (en) | Substrate processing chamber with off-center gas delivery funnel | |
JP2005142355A (ja) | 基板処理装置及び半導体装置の製造方法 | |
KR101628786B1 (ko) | 기판 처리장치 및 기판 처리방법 | |
KR101570227B1 (ko) | 기판 처리장치 및 기판 처리방법 | |
JP7446650B1 (ja) | 原子層堆積装置及び原子層堆積方法 | |
JP7376693B2 (ja) | 処理システムおよび反応体ガスを供給する方法 | |
JP2000349030A (ja) | 気相反応装置 | |
US20240254655A1 (en) | Epi isolation plate and parallel block purge flow tuning for growth rate and uniformity | |
US20220081772A1 (en) | Substrate processing apparatus and method for manufacturing semiconductor device | |
CN117413087A (zh) | 薄膜沉积方法 |