TW201717309A - Aluminum nitride electrostatic chuck for high plasma density and high temperature semiconductor process capable of controlling a temperature of a substrate of to-be-sucked object through a cooling air channel design on the surface groove layer - Google Patents
Aluminum nitride electrostatic chuck for high plasma density and high temperature semiconductor process capable of controlling a temperature of a substrate of to-be-sucked object through a cooling air channel design on the surface groove layer Download PDFInfo
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- TW201717309A TW201717309A TW104136106A TW104136106A TW201717309A TW 201717309 A TW201717309 A TW 201717309A TW 104136106 A TW104136106 A TW 104136106A TW 104136106 A TW104136106 A TW 104136106A TW 201717309 A TW201717309 A TW 201717309A
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000001816 cooling Methods 0.000 title abstract description 11
- 238000013461 design Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 title abstract 4
- 239000000112 cooling gas Substances 0.000 claims abstract description 46
- 230000005611 electricity Effects 0.000 claims description 8
- 239000011156 metal matrix composite Substances 0.000 claims description 8
- 230000003068 static effect Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 230000002708 enhancing effect Effects 0.000 claims description 4
- 238000001179 sorption measurement Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 61
- 239000000919 ceramic Substances 0.000 abstract description 10
- 238000012545 processing Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000012546 transfer Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000002156 adsorbate Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
此發明用於半導體製程中，用於控制製程中的晶圓溫度，特別針對近年來半導體製程中電漿功率密度逐漸增加，隨著高溫度、高電壓製程需求，以及製程的精密度提升及良率的提升等要求，吸盤與晶圓間的熱傳導速率要快才能符合製程產能要求，因此更高導熱的新一代的介電陶瓷材料與結構設計勢必得進行開發。本發明為新一***發出整體為氮化鋁陶瓷製之靜電吸盤，並以靜電吸附晶圓於固定處，適用於高速傳輸需求之半導體製程，例如晶圓表面蝕刻、鍍膜製程等。 The invention is used in a semiconductor process for controlling the temperature of a wafer in a process, in particular, in recent years, the power density of a plasma in a semiconductor process is gradually increased, with the demand for high temperature and high voltage processes, and the precision of the process is improved. The rate of increase and other requirements, the heat transfer rate between the suction cup and the wafer is fast enough to meet the process capacity requirements, so a new generation of dielectric ceramic materials and structural design with higher thermal conductivity is bound to be developed. The invention develops an electrostatic chuck made entirely of aluminum nitride ceramic for a new generation, and electrostatically adsorbs the wafer at a fixed place, and is suitable for a semiconductor process requiring high-speed transmission, such as wafer surface etching and coating process.
本發明不同於傳統低溫晶圓製程之靜電吸盤設計，為一種用於高電漿密度、高溫半導體製程的氮化鋁靜電吸盤，並針對此模組表面設計一冷卻氣體通道以利晶圓之溫度分佈控制。經由此設計控制，冷卻氣體通過之冷卻氣體通道與接觸面的比例及分佈形狀設計可對吸放晶圓的溫度分佈進行控制。 The invention is different from the traditional electrostatic chuck design of the low temperature wafer process, and is an aluminum nitride electrostatic chuck for high plasma density and high temperature semiconductor process, and a cooling gas channel is designed for the surface of the module to facilitate the temperature of the wafer. Distribution control. Controlled by this design, the ratio of the cooling gas passages through the cooling gas passage to the contact surface and the distribution shape design can control the temperature distribution of the suction and discharge wafers.
早期，由於電漿功率密度相當低，並不需要對晶圓進行冷卻與溫度控制，但近年來，隨著製程設備的演進及製程技術的進步，電漿功率密度逐漸增加，已必須設法對晶圓進行冷卻或加強晶圓座的散熱效率，否則溫度的上升將會破壞晶圓上已完成的圖案結構，影響後續的製程進行。而又隨著晶圓尺寸的增加，傳統的機械式晶圓座(Mechanical Clamp)面臨 到許多的問題，如晶圓拱起變形(Bowing)、邊緣排除(指晶圓邊緣部分因受力不均而無法使用，Edge Exclusion)、生產量(Throughput)、複雜結構性(Complex Structure)、保養(Maintenance)、污染(指製程中晶圓會與機械式晶圓座摩擦而產生微粒污染，Contamination)與壽命(Life Time)等。為了解決上述製程上的問題，近年來，半導體晶圓製程設備已經以介電質材料層產生靜電力(Electrostatic force)的靜電吸盤(Electrostatic Chuck,ESC)取代傳統的機械式晶圓座，以此靜電力吸附晶片，它除了解決上述製程的問題外，亦可改善晶圓的接觸，增加熱傳效果，使冷卻效果加強，而且它並無直接暴露在電漿中，故製程效率和產能及品質皆大為提高。 In the early days, due to the relatively low power density of the plasma, there is no need for cooling and temperature control of the wafer. However, in recent years, with the evolution of process equipment and advances in process technology, the power density of the plasma has gradually increased, and it has to be managed. The circle cools or enhances the heat dissipation efficiency of the wafer holder. Otherwise, the temperature rise will destroy the completed pattern structure on the wafer and affect the subsequent process. And as the size of the wafer increases, the traditional mechanical wafer holder (Mechanical Clamp) faces Many problems, such as wafer bowing, edge exclusion (referring to the edge of the wafer due to uneven force, Edge Exclusion), throughput (Throughput), complex structure (Complex Structure), Maintenance, pollution (referring to the wafer will be rubbed against the mechanical wafer holder during the process to produce particulate contamination, Contamination) and life (Life Time). In order to solve the above problems in the process, in recent years, semiconductor wafer processing equipment has replaced the conventional mechanical wafer holder with an electrostatic electrostatic chuck (ESC) that generates an electrostatic force layer of a dielectric material layer. Electrostatic force adsorption wafer, in addition to solving the above-mentioned process problems, can also improve wafer contact, increase heat transfer effect, enhance cooling effect, and it is not directly exposed to the plasma, so process efficiency and productivity and quality All are greatly improved.
為了解決晶圓表面熱傳問題，日本特開平09-232415利用靜電吸盤表面供給傳熱氣體的手段，並設有放射狀溝槽，並利用溝槽與電極相重疊的構造，使溝槽的底面與電極的距離縮短達到較佳熱傳及快速降溫效果，但若在施加高電壓電漿時將會導致氣體放電，即便利用表面的絕緣介電薄層仍無法避免發生絕緣破壞的情形，因此高密度電漿勢必得利用整組皆為絕緣導熱陶瓷且具有冷卻氣體通道設計才能達到電絕緣及高溫製程溫度控制之效果。 In order to solve the problem of heat transfer on the surface of the wafer, Japanese Patent Laid-Open No. 09-232415 utilizes a means for supplying a heat transfer gas on the surface of the electrostatic chuck, and is provided with a radial groove, and the groove is overlapped with the electrode to make the bottom surface of the groove The distance from the electrode is shortened to achieve better heat transfer and rapid temperature drop. However, if high-voltage plasma is applied, gas discharge will occur, and even if the insulating dielectric thin layer on the surface is used, insulation breakdown cannot be avoided. Density plasma is bound to use the entire group of insulated and thermally conductive ceramics and has a cooling gas channel design to achieve electrical insulation and high temperature process temperature control.
中華民國申請專利案號098127179則在表面覆蓋一薄氧化鋁層為主作為介電層，電絕緣定位盤基低則利用其它具有導熱陶瓷製成具有氣流溝槽的陶瓷靜電吸盤，但其因複合層在高溫製程下容易造成複合層之間的崩落，且氧化鋁介電薄層在長時間的晶圓傳輸磨耗中易被完全磨損導致壽命較短，熱傳遞過程也在其複合層介面造成阻礙，因此在高電漿密度及高溫製程中的耐用性仍有疑慮，因此以整體皆具有介電、絕緣且導熱效 果之陶瓷之靜電吸盤模組方可滿足高溫、高電漿密度之新一代晶圓製程需求。 The Republic of China application for patent number 098127179 covers a thin layer of alumina as the dielectric layer on the surface, and the ceramic insulator has a ceramic electrostatic chuck with airflow grooves made of thermally conductive ceramics. The layer is prone to collapse between the composite layers under high temperature process, and the aluminum oxide dielectric layer is easily worn out during long-term wafer transport wear, resulting in a short lifetime, and the heat transfer process also hinders the composite layer interface. Therefore, there is still doubt in the durability of high plasma density and high-temperature process, so the whole has dielectric, insulating and heat-transmissive effects. The ceramic electrostatic chuck module can meet the needs of next-generation wafer processes with high temperature and high plasma density.
本發明之實施例提供一種用於高電漿密度、高溫半導體製程的氮化鋁靜電吸盤，並針對此靜電吸盤表面設計一冷卻氣體通道以利晶圓之溫度分佈控制，該氮化鋁靜電吸盤包括一整體為氮化鋁燒結而成之定位靜電吸盤，該定位靜電吸盤包含：一前表面具有冷卻氣體通道之溝槽結構層，該溝槽結構層具有寬度2mm，深度範圍20~100μm的氣體通道，用於吸放晶圓及控制吸附晶圓之熱分佈；一內埋一或多個高壓電極之氮化鋁介電絕緣層，其中該電極包含一導電金屬基質複合材料，用以施加電壓產生靜電以供吸附晶圓；一內埋水道之氮化鋁導熱層，以供強化晶圓降溫。 Embodiments of the present invention provide an aluminum nitride electrostatic chuck for a high plasma density, high temperature semiconductor process, and a cooling gas channel is designed for the surface of the electrostatic chuck to control the temperature distribution of the wafer. The aluminum nitride electrostatic chuck The invention comprises a positioning electrostatic chuck which is sintered by aluminum nitride as a whole. The positioning electrostatic chuck comprises: a groove structure layer having a cooling gas passage on a front surface, the groove structure layer having a gas width of 2 mm and a depth ranging from 20 to 100 μm. a channel for sucking and dropping the wafer and controlling the heat distribution of the adsorbed wafer; an aluminum nitride dielectric insulating layer in which one or more high voltage electrodes are buried, wherein the electrode comprises a conductive metal matrix composite material for applying a voltage Static electricity is generated for adsorbing the wafer; an aluminum nitride thermal conductive layer embedded in the water channel is used to enhance the wafer cooling.
在實施例一中，一種用於高電漿密度、高溫半導體製程的氮化鋁靜電吸盤，其包括一整體為氮化鋁燒結而成之定位靜電吸盤，該定位靜電吸盤包含：一前表面具有冷卻氣體通道之溝槽結構層，該冷卻氣體通道寬度2mm，深度20um，用於吸放晶圓及控制吸附晶圓之熱分佈；一內埋一或多個高壓電極之氮化鋁介電絕緣層，其中該電極包含一導電金屬基質複合材料，用以施加2.0KV至3.0KV的電壓產生靜電以供吸附晶圓；一內埋水道之氮化鋁導熱層，以供強化晶圓降溫，在施加3.0KV的電壓及冷卻氣體壓力10Torr下，靜電吸盤上熱傳導係數為460W/mK，熱溫度差異值為±10.8℃。 In the first embodiment, an aluminum nitride electrostatic chuck for a high plasma density, high temperature semiconductor process includes a positioning electrostatic chuck integrally sintered with aluminum nitride, the positioning electrostatic chuck comprising: a front surface having a trench structure layer of the cooling gas channel, the cooling gas channel has a width of 2 mm and a depth of 20 μm, is used for sucking and dropping the wafer and controlling the heat distribution of the adsorbed wafer; and an aluminum nitride dielectric insulating for embedding one or more high voltage electrodes a layer, wherein the electrode comprises a conductive metal matrix composite material for applying a voltage of 2.0 KV to 3.0 KV to generate static electricity for adsorbing the wafer; and an aluminum nitride thermal conductive layer for embedding the water channel for enhancing wafer cooling, When a voltage of 3.0 KV and a cooling gas pressure of 10 Torr were applied, the heat transfer coefficient on the electrostatic chuck was 460 W/mK, and the difference in thermal temperature was ±10.8 °C.
在實施例二中，一種用於高電漿密度、高溫半導體製程的氮化鋁靜電吸盤，其包括一整體為氮化鋁燒結而成之定位靜電吸盤，該定位 靜電吸盤包含：一前表面具有冷卻氣體通道之溝槽結構層，該冷卻氣體通道寬度2mm，深度40um，用於吸放晶圓及控制吸附晶圓之熱分佈；一內埋一或多個高壓電極之氮化鋁介電絕緣層，其中該電極包含一導電金屬基質複合材料，用以施加2.0KV至3.0KV的電壓產生靜電以供吸附晶圓；一內埋水道之氮化鋁導熱層，以供強化晶圓降溫，在施加3.0KV的電壓及冷卻氣體壓力10Torr下，靜電吸盤上熱傳導係數為405W/mK，熱溫度差異值為±10.85℃。 In the second embodiment, an aluminum nitride electrostatic chuck for a high plasma density, high temperature semiconductor process, comprising a positioning electrostatic chuck integrally sintered by aluminum nitride, the positioning The electrostatic chuck comprises: a groove structure layer having a cooling gas passage on the front surface, the cooling gas passage has a width of 2 mm and a depth of 40 um, and is used for sucking and dropping the wafer and controlling the heat distribution of the adsorption wafer; and embedding one or more high voltages An aluminum nitride dielectric insulating layer of the electrode, wherein the electrode comprises a conductive metal matrix composite material for applying a voltage of 2.0 KV to 3.0 KV to generate static electricity for adsorbing the wafer; and an aluminum nitride thermal conductive layer of the buried water channel, In order to enhance the wafer cooling, the thermal conductivity coefficient on the electrostatic chuck is 405 W/mK and the thermal temperature difference value is ±10.85 ° C under the application of a voltage of 3.0 KV and a pressure of the cooling gas of 10 Torr.
在實施例三中，一種用於高電漿密度、高溫半導體製程的氮化鋁靜電吸盤，其包括一整體為氮化鋁燒結而成之定位靜電吸盤，該定位靜電吸盤包含：一前表面具有冷卻氣體通道之溝槽結構層，該冷卻氣體通道寬度2mm，深度60um，用於吸放晶圓及控制吸附晶圓之熱分佈；一內埋一或多個高壓電極之氮化鋁介電絕緣層，其中該電極包含一導電金屬基質複合材料，用以施加2.0KV至3.0KV的電壓產生靜電以供吸附晶圓；一內埋水道之氮化鋁導熱層，以供強化晶圓降溫，在施加3.0KV的電壓及冷卻氣體壓力10Torr下，靜電吸盤上熱傳導係數為375W/mK，熱溫度差異值為±10.9℃。 In the third embodiment, an aluminum nitride electrostatic chuck for a high plasma density, high temperature semiconductor process includes a positioning electrostatic chuck integrally sintered with aluminum nitride, the positioning electrostatic chuck comprising: a front surface having a trench structure layer of the cooling gas channel, the cooling gas channel has a width of 2 mm and a depth of 60 μm, is used for sucking and dropping the wafer and controlling the heat distribution of the adsorbed wafer; and an aluminum nitride dielectric insulating for embedding one or more high voltage electrodes a layer, wherein the electrode comprises a conductive metal matrix composite material for applying a voltage of 2.0 KV to 3.0 KV to generate static electricity for adsorbing the wafer; and an aluminum nitride thermal conductive layer for embedding the water channel for enhancing wafer cooling, When a voltage of 3.0 KV and a cooling gas pressure of 10 Torr were applied, the heat transfer coefficient on the electrostatic chuck was 375 W/mK, and the difference in thermal temperature was ±10.9 °C.
在實施例四中，一種用於高電漿密度、高溫半導體製程的氮化鋁靜電吸盤，其包括一整體為氮化鋁燒結而成之定位靜電吸盤，該定位靜電吸盤包含：一前表面具有冷卻氣體通道之溝槽結構層，該冷卻氣體通道寬度2mm，深度80um，用於吸放晶圓及控制吸附晶圓之熱分佈；一內埋一或多個高壓電極之氮化鋁介電絕緣層，其中該電極包含一導電金屬基質複合材料，用以施加2.0KV至3.0KV的電壓產生靜電以供吸附晶圓；一 內埋水道之氮化鋁導熱層，以供強化晶圓降溫，在施加3.0KV的電壓及冷卻氣體壓力10Torr下，靜電吸盤上熱傳導係數為335W/mK，熱溫度差異值為±10.95℃。 In the fourth embodiment, an aluminum nitride electrostatic chuck for a high plasma density, high temperature semiconductor process includes a positioning electrostatic chuck integrally sintered with aluminum nitride, the positioning electrostatic chuck comprising: a front surface having a trench structure layer of the cooling gas channel, the cooling gas channel has a width of 2 mm and a depth of 80 μm, is used for sucking and dropping the wafer and controlling the heat distribution of the adsorbed wafer; and an aluminum nitride dielectric insulating for embedding one or more high voltage electrodes a layer, wherein the electrode comprises a conductive metal matrix composite for applying a voltage of 2.0 KV to 3.0 KV to generate static electricity for adsorbing the wafer; The aluminum nitride thermal conductive layer of the buried water channel is used for cooling the enhanced wafer. The thermal conductivity coefficient on the electrostatic chuck is 335 W/mK and the thermal temperature difference value is ±10.95 ° C under the application of a voltage of 3.0 KV and a cooling gas pressure of 10 Torr.
在實施例五中，一種用於高電漿密度、高溫半導體製程的氮化鋁靜電吸盤，其包括一整體為氮化鋁燒結而成之定位靜電吸盤，該定位靜電吸盤包含：一前表面具有冷卻氣體通道之溝槽結構層，該冷卻氣體通道寬度2mm，深度100um，用於吸放晶圓及控制吸附晶圓之熱分佈；一內埋一或多個高壓電極之氮化鋁介電絕緣層，其中該電極包含一導電金屬基質複合材料，用以施加2.0KV至3.0KV的電壓產生靜電以供吸附晶圓；一內埋水道之氮化鋁導熱層，以供強化晶圓降溫，在施加3.0KV的電壓及冷卻氣體壓力10Torr下，靜電吸盤上熱傳導係數為303W/mK，熱溫度差異值為±11℃。 In the fifth embodiment, an aluminum nitride electrostatic chuck for a high plasma density, high temperature semiconductor process includes a positioning electrostatic chuck integrally sintered with aluminum nitride, the positioning electrostatic chuck comprising: a front surface having a trench structure layer of the cooling gas channel, the cooling gas channel has a width of 2 mm and a depth of 100 μm, is used for sucking and dropping the wafer and controlling the heat distribution of the adsorbed wafer; and an aluminum nitride dielectric insulating for embedding one or more high voltage electrodes a layer, wherein the electrode comprises a conductive metal matrix composite material for applying a voltage of 2.0 KV to 3.0 KV to generate static electricity for adsorbing the wafer; and an aluminum nitride thermal conductive layer for embedding the water channel for enhancing wafer cooling, When a voltage of 3.0 KV and a cooling gas pressure of 10 Torr were applied, the heat transfer coefficient on the electrostatic chuck was 303 W/mK, and the difference in thermal temperature was ±11 °C.
1‧‧‧氮化鋁靜電吸盤 1‧‧‧Aluminum nitride electrostatic chuck
1a‧‧‧溝槽結構層 1a‧‧‧ trench structure
1b‧‧‧介電絕緣層 1b‧‧‧dielectric insulation
1c‧‧‧導熱層 1c‧‧‧thermal layer
2‧‧‧冷卻氣體通道 2‧‧‧Cooling gas channel
2a‧‧‧冷卻氣體通道外表面 2a‧‧‧The outer surface of the cooling gas passage
2b‧‧‧冷卻氣體通道內表面 2b‧‧‧The inner surface of the cooling gas passage
3‧‧‧靜電吸盤與晶圓接觸表面 3‧‧‧Electrostatic chuck and wafer contact surface
4‧‧‧冷卻氣體入口 4‧‧‧Cooling gas inlet
5‧‧‧晶圓抬昇點 5‧‧‧ wafer lift point
5a‧‧‧上表面 5a‧‧‧Upper surface
5b‧‧‧通道表面 5b‧‧‧channel surface
6‧‧‧靜電吸盤外徑邊緣 6‧‧‧ Electrostatic chuck outer diameter edge
7‧‧‧被吸附物(通常為矽晶圓) 7‧‧‧ adsorbate (usually 矽 wafer)
8‧‧‧鎢電極 8‧‧‧Tungsten electrode
9‧‧‧晶圓突出面 9‧‧‧ Wafer protruding surface
第1圖係為本發明實施例之氮化鋁靜電吸盤側剖面三層結構圖 1 is a three-layer structure diagram of an aluminum nitride electrostatic chuck in the embodiment of the present invention.
第2圖係為本發明實施例之溝槽結構層上視圖。 Figure 2 is a top plan view of a trench structure layer in accordance with an embodiment of the present invention.
第3圖係為本發明實施例之氮化鋁靜電吸盤之側剖面圖及冷卻氣體通道比例圖。 Figure 3 is a side cross-sectional view showing an aluminum nitride electrostatic chuck according to an embodiment of the present invention and a cooling gas passage ratio diagram.
第4圖為根據本發明一實施例之氮化鋁靜電吸盤之冷卻氣體流動示意圖。 Fig. 4 is a schematic view showing the flow of cooling gas of an aluminum nitride electrostatic chuck according to an embodiment of the present invention.
本發明提供一種用於高電漿密度、高溫半導體製程的氮化鋁靜電吸盤，本發明之實施例包含一整體為氮化鋁燒結而成之定位靜電吸盤。 The invention provides an aluminum nitride electrostatic chuck for high plasma density and high temperature semiconductor process. The embodiment of the invention comprises a positioning electrostatic chuck which is sintered by aluminum nitride as a whole.
第1圖為根據本發明一實施例之氮化鋁靜電吸盤側剖面三層結構圖，該氮化鋁靜電吸盤包括三層，分別為一具有冷卻氣體通道的溝槽結構層1a，一內埋一或多個高壓電極的介電絕緣層1b，一內埋水道的導熱層1c。第2圖為本發明一實施例之氮化鋁靜電吸盤1的溝槽結構層1a之上視圖，該層包含寬度為2mm，深度為20~100μm的冷卻氣體通道2，該冷卻氣體通道2具有冷卻氣體通道外表面2a，該表面氣道溝槽層具有靜電吸盤與晶圓接觸表面3，冷卻氣體入口4用以通入冷卻氣體，晶圓抬昇點5，上表面5a，通道表面5b，靜電吸盤外徑邊緣6。 1 is a three-layer structure diagram of a side view of an aluminum nitride electrostatic chuck according to an embodiment of the present invention. The aluminum nitride electrostatic chuck comprises three layers, respectively a trench structure layer 1a having a cooling gas channel, and a buried layer. A dielectric insulating layer 1b of one or more high voltage electrodes, a thermally conductive layer 1c in which a water channel is buried. 2 is a top view of a trench structure layer 1a of an aluminum nitride electrostatic chuck 1 according to an embodiment of the present invention, the layer comprising a cooling gas channel 2 having a width of 2 mm and a depth of 20 to 100 μm, the cooling gas channel 2 having Cooling gas passage outer surface 2a having an electrostatic chuck and wafer contact surface 3, cooling gas inlet 4 for introducing cooling gas, wafer lifting point 5, upper surface 5a, channel surface 5b, static electricity The outer edge of the suction cup is 6.
第3圖為根據本發明一實施例之氮化鋁靜電吸盤1之側剖面圖，圖中顯示溝槽結構層之冷卻氣體通道之比例，該冷卻氣體通道2寬度為2mm，深度為20~100μm，該冷卻氣體通道2具有外表面2a及內表面2b，該溝槽結構層具有晶圓凸出面9，被吸附物7(通常為矽晶圓)，靜電吸盤與晶圓接觸表面3，通道表面5b，該氮化鋁靜電吸盤1之介電絕緣層1b之內埋電極層具有鎢電極8。 3 is a side cross-sectional view of an aluminum nitride electrostatic chuck 1 according to an embodiment of the present invention, showing a ratio of a cooling gas passage of a groove structure layer having a width of 2 mm and a depth of 20 to 100 μm. The cooling gas channel 2 has an outer surface 2a having a wafer convex surface 9, an adsorbed material 7 (usually a germanium wafer), an electrostatic chuck and a wafer contact surface 3, and a channel surface. 5b, the buried electrode layer of the dielectric insulating layer 1b of the aluminum nitride electrostatic chuck 1 has a tungsten electrode 8.
第4圖為根據本發明一實施例之氮化鋁靜電吸盤1之冷卻氣體流動示意圖，冷卻氣體由氣體入口4進入溝槽結構層後經由冷卻氣體通道2，將冷卻氣體流通至整個溝槽結構層，達到散熱的效果。 4 is a schematic view showing the flow of cooling gas of the aluminum nitride electrostatic chuck 1 according to an embodiment of the present invention. The cooling gas enters the trench structure layer from the gas inlet 4, and then flows the cooling gas to the entire trench structure via the cooling gas channel 2. Layer to achieve the effect of heat dissipation.
1‧‧‧氮化鋁靜電吸盤 1‧‧‧Aluminum nitride electrostatic chuck
2‧‧‧冷卻氣體通道 2‧‧‧Cooling gas channel
2a‧‧‧冷卻氣體通道外表面 2a‧‧‧The outer surface of the cooling gas passage
3‧‧‧靜電吸盤與晶圓接觸表面 3‧‧‧Electrostatic chuck and wafer contact surface
4‧‧‧冷卻氣體入口 4‧‧‧Cooling gas inlet
5‧‧‧晶圓抬昇點 5‧‧‧ wafer lift point
5a‧‧‧上表面 5a‧‧‧Upper surface
5b‧‧‧靜電吸盤通道表面 5b‧‧‧ Electrostatic chuck channel surface
6‧‧‧靜電吸盤外徑邊緣 6‧‧‧ Electrostatic chuck outer diameter edge
Claims (2)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104136106A TW201717309A (en) | 2015-11-03 | 2015-11-03 | Aluminum nitride electrostatic chuck for high plasma density and high temperature semiconductor process capable of controlling a temperature of a substrate of to-be-sucked object through a cooling air channel design on the surface groove layer |
| JP2015217933A JP2017092156A (en) | 2015-11-03 | 2015-11-05 | Aluminum nitride electrostatic chuck used in high temperature and high plasma power density semiconductor manufacturing process |
| US14/943,290 US9972520B2 (en) | 2015-11-03 | 2015-11-17 | Aluminum nitride electrostatic chuck used in high temperature and high plasma power density semiconductor manufacturing process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104136106A TW201717309A (en) | 2015-11-03 | 2015-11-03 | Aluminum nitride electrostatic chuck for high plasma density and high temperature semiconductor process capable of controlling a temperature of a substrate of to-be-sucked object through a cooling air channel design on the surface groove layer |
| US14/943,290 US9972520B2 (en) | 2015-11-03 | 2015-11-17 | Aluminum nitride electrostatic chuck used in high temperature and high plasma power density semiconductor manufacturing process |
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| TW201717309A true TW201717309A (en) | 2017-05-16 |
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| TW104136106A TW201717309A (en) | 2015-11-03 | 2015-11-03 | Aluminum nitride electrostatic chuck for high plasma density and high temperature semiconductor process capable of controlling a temperature of a substrate of to-be-sucked object through a cooling air channel design on the surface groove layer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113035756A (en) * | 2021-03-24 | 2021-06-25 | 绍兴同芯成集成电路有限公司 | Method for radiating substrate in ultrathin wafer processing by using glass carrier plate |
| CN113725141A (en) * | 2021-08-31 | 2021-11-30 | 浙江新纳陶瓷新材有限公司 | Porous ceramic electrostatic chuck |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113035756A (en) * | 2021-03-24 | 2021-06-25 | 绍兴同芯成集成电路有限公司 | Method for radiating substrate in ultrathin wafer processing by using glass carrier plate |
| CN113725141A (en) * | 2021-08-31 | 2021-11-30 | 浙江新纳陶瓷新材有限公司 | Porous ceramic electrostatic chuck |
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