TW201710535A - Measurement assembly for measuring a deposition rate, an evaporation source having the same, a deposition apparatus having the same and method therefor - Google Patents
Measurement assembly for measuring a deposition rate, an evaporation source having the same, a deposition apparatus having the same and method therefor Download PDFInfo
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- TW201710535A TW201710535A TW105118926A TW105118926A TW201710535A TW 201710535 A TW201710535 A TW 201710535A TW 105118926 A TW105118926 A TW 105118926A TW 105118926 A TW105118926 A TW 105118926A TW 201710535 A TW201710535 A TW 201710535A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01G—WEIGHING
- G01G3/00—Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances
- G01G3/12—Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances wherein the weighing element is in the form of a solid body stressed by pressure or tension during weighing
- G01G3/16—Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances wherein the weighing element is in the form of a solid body stressed by pressure or tension during weighing measuring variations of frequency of oscillations of the body
- G01G3/165—Constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/036—Analysing fluids by measuring frequency or resonance of acoustic waves
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/01—Indexing codes associated with the measuring variable
- G01N2291/014—Resonance or resonant frequency
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/025—Change of phase or condition
- G01N2291/0256—Adsorption, desorption, surface mass change, e.g. on biosensors
Abstract
Description
本揭露是有關於一種用於測量已蒸發材料之沉積速率的測量組件、用於材料之蒸發的蒸發源、用於供應材料於基板的沉積設備和用於測量已蒸發材料之沉積速率的方法。本揭露特別是有關於一種用於測量已蒸發之有機材料之沉積速率的測量組件及方法。再者，本揭露特別是有關於包含有機材料在其中的裝置，例如是有機材料之蒸發源和沉積設備。The present disclosure relates to a measuring assembly for measuring the deposition rate of an evaporated material, an evaporation source for evaporation of the material, a deposition apparatus for supplying the material to the substrate, and a method for measuring the deposition rate of the evaporated material. The present disclosure is particularly directed to a measurement assembly and method for measuring the deposition rate of an evaporated organic material. Furthermore, the present disclosure relates in particular to devices comprising organic materials therein, such as evaporation sources and deposition equipment for organic materials.
有機蒸發器係為用於製造有機發光二極體（Organic Light-Emitting Diodes, OLED）之工具。OLEDs係為發光二極體之一種特別形式，在發光二極體中，發光層包括特定之有機化合物的薄膜。有機發光二極體（OLEDs）係使用來製造用以顯示資訊之電視螢幕、電腦螢幕、行動電話、其他手持裝置等。OLEDs亦可作為一般空間照明之用。OLED顯示器之可行的顏色、亮度、及視角的範圍係大於傳統之液晶顯示器（LCD）的此些特性，因為OLED像素係直接地發光且不包含背光。因此，相較於傳統之液晶顯示器之能量損耗，OLED顯示器之能量損耗係相當地少。再者，OLEDs可被製造於可撓性基板上的事實係產生進一步的應用。The organic vaporizer is a tool for manufacturing Organic Light-Emitting Diodes (OLED). OLEDs are a special form of light-emitting diodes in which the light-emitting layer comprises a film of a specific organic compound. Organic light-emitting diodes (OLEDs) are used to make television screens, computer screens, mobile phones, other handheld devices, etc. for displaying information. OLEDs can also be used for general space lighting. The range of possible colors, brightness, and viewing angles of OLED displays is greater than such characteristics of conventional liquid crystal displays (LCDs) because OLED pixels are directly illuminated and do not include a backlight. Therefore, the energy loss of an OLED display is considerably less than that of a conventional liquid crystal display. Furthermore, the fact that OLEDs can be fabricated on flexible substrates creates further applications.
OLED之功能係取決於有機材料之塗層厚度。此厚度必須在預定範圍內。在OLEDs之製造中，產生具有有機材料之塗層的沉積速率係被控制以落在預定之公差範圍內。也就是說，在製程中必須充分地控制有機蒸發器之沉積速率。The function of the OLED depends on the coating thickness of the organic material. This thickness must be within the predetermined range. In the manufacture of OLEDs, the deposition rate of the coating having the organic material is controlled to fall within predetermined tolerances. That is to say, the deposition rate of the organic vaporizer must be sufficiently controlled in the process.
因此，對於OLED應用及對於其它蒸發製程來說，在比較長時間內係需要高準確性的沉積速率。現有數個可行的測量系統，用以測量蒸發器之沉積速率。然而，此些測量系統在所需之時間區間中面臨準確性不足及/或穩定性不足的情況。Therefore, for OLED applications and for other evaporation processes, a high accuracy deposition rate is required for a relatively long period of time. There are several possible measurement systems available to measure the deposition rate of the evaporator. However, such measurement systems face insufficient accuracy and/or insufficient stability in the required time interval.
因此，提供改良之沉積速率測量系統、沉積速率量測方法、蒸發器及沉積設備係有持續的需求。Accordingly, there is a continuing need to provide improved deposition rate measurement systems, deposition rate measurement methods, evaporators, and deposition equipment.
有鑑於上述，根據獨立申請專利範圍之一種用於測量已蒸發材料之沉積速率的測量組件、一種蒸發源、一種沉積設備及一種用於測量已蒸發材料之沉積速率的方法係提供。其它優點、特徵、方面及細節係透過附屬申請專利範圍、說明及圖式更加清楚。In view of the above, a measuring assembly for measuring the deposition rate of an evaporated material, an evaporation source, a deposition apparatus, and a method for measuring the deposition rate of the evaporated material are provided according to the scope of the independent patent application. Other advantages, features, aspects and details will become apparent from the scope of the appended claims, the description and the drawings.
根據本揭露之一方面，提出一種用於測量已蒸發材料之沉積速率的測量組件。測量組件包括振盪晶體及固持件，振盪晶體用以測量沉積速率，固持件用以支承振盪晶體，其中固持件包括具有熱傳導係數k大於30 W/(mK)之一材料。In accordance with one aspect of the present disclosure, a measurement assembly for measuring a deposition rate of an evaporated material is presented. The measuring assembly includes an oscillating crystal for measuring a deposition rate, and a holder for supporting the oscillating crystal, wherein the holder comprises a material having a thermal conductivity k greater than 30 W/(mK).
根據本揭露之另一方面，提出一種用於材料之蒸發的蒸發源。蒸發源包括蒸發坩鍋、分佈管及根據本文任一實施例所述之測量組件。該蒸發坩鍋係裝配以蒸發一材料。分佈管具有一或多個出口，此一或多個出口係沿著分佈管之長度設置，用以提供已蒸發材料，其中分佈管係流體連通於蒸發坩鍋。According to another aspect of the present disclosure, an evaporation source for evaporation of a material is proposed. The evaporation source includes an evaporation crucible, a distribution tube, and a measurement assembly according to any of the embodiments herein. The evaporating crucible is assembled to evaporate a material. The distribution tube has one or more outlets disposed along the length of the distribution tube to provide vaporized material, wherein the distribution tube is in fluid communication with the evaporation crucible.
根據本揭露之其它方面，提出一種用於在真空腔室中以一沉積速率供應材料至基板的沉積設備。沉積設備包括根據本文所述之數個實施例之至少一蒸發源。In accordance with other aspects of the present disclosure, a deposition apparatus for supplying material to a substrate at a deposition rate in a vacuum chamber is presented. The deposition apparatus includes at least one evaporation source according to several embodiments described herein.
根據本揭露之又一方面，提出一種用於測量已蒸發材料之沉積速率的方法。方法包括蒸發材料、供應已蒸發材料之第一部分至基板、轉移已蒸發材料之第二部分至振盪晶體，以及使用根據本文所述之數個實施例之測量組件測量沉積速率。In accordance with yet another aspect of the present disclosure, a method for measuring a deposition rate of an evaporated material is presented. The method includes evaporating a material, supplying a first portion of the evaporated material to a substrate, transferring a second portion of the evaporated material to an oscillating crystal, and measuring a deposition rate using a measurement assembly according to several embodiments described herein.
本揭露係亦有關於一種設備，用以執行所揭露之方法的此設備包括用以執行方法之設備部件。此方法可藉由硬體元件、由合適軟體程式化之電腦、此兩者之任何結合或任何其他方式來執行。再者，本揭露係亦有關於所述之設備的操作方法。它包括一種用以執行設備之各功能之方法。為了對本發明之上述及其他方面有更佳的瞭解，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下：The disclosure also relates to a device for performing the disclosed method, the device component for performing the method. This method can be performed by a hardware component, a computer programmed by a suitable software, any combination of the two, or any other means. Furthermore, the present disclosure also relates to the method of operation of the apparatus described. It includes a method for performing various functions of the device. In order to better understand the above and other aspects of the present invention, the preferred embodiments are described below, and in conjunction with the drawings, the detailed description is as follows:
現將詳細地參照本揭露之數種實施例，本揭露之數種實施例的一或多個例子係繪示於圖式中。在下方圖式之說明中，相同參考編號意指相同元件。在下文中，僅對有關於個別實施例之相異處係進行說明。各例子係藉由說明本揭露的方式提供，但並不意味為本揭露的限制。再者，所說明或敘述而作為一實施例之部分之特徵可用於其它實施例上或與其它實施例結合，以產生更多其它實施例。此意指本說明包括此些調整及變化。One or more examples of the several embodiments of the present disclosure are illustrated in the drawings. In the description of the figures below, like reference numerals refer to like elements. In the following, only the differences between the individual embodiments will be explained. The examples are provided by way of illustration of the disclosure, but are not intended to be limiting. Furthermore, the features illustrated or described as part of an embodiment can be used in other embodiments or in combination with other embodiments to yield further embodiments. This means that the description includes such adjustments and changes.
在本揭露中，詞句「用以測量沉積速率之振盪晶體」可理解為：藉由測量振盪晶體諧振器於頻率之改變，用於測量在單位面積之振盪晶體上的已沉積材料之質量變化（mass variation）的一種振盪晶體。特別地，在本揭露中，振盪晶體可理解為石英晶體諧振器（quartz crystal resonator）。更特別是，「用以測量沉積速率之振盪晶體」可理解為石英晶體微天秤（Quartz Crystal Microbalance, QCM）。In the present disclosure, the phrase "oscillating crystal for measuring deposition rate" can be understood as: measuring the change in mass of a deposited material on an oscillating crystal per unit area by measuring a change in frequency of an oscillating crystal resonator ( Mass variation) of an oscillating crystal. In particular, in the present disclosure, an oscillating crystal can be understood as a quartz crystal resonator. More specifically, "the oscillating crystal used to measure the deposition rate" can be understood as a Quartz Crystal Microbalance (QCM).
範例性參照第1圖，根據本文所述實施例之用於測量已沉積材料之沉積速率的測量組件100包括一振盪晶體110及一固持件120，振盪晶體110用以測量沉積速率，固持件120用以支承振盪晶體110。固持件120可包括具有熱傳導係數k大於30 W/(mK)之材料。特別地，固持件可包括具有熱傳導係數k大於50 W/(mK)之材料，更特別地係熱傳導係數k大於70 W/(mK)之材料，舉例為大於150 W/(mK)之材料。因此，可減少會降低測量準確性之振盪晶體的熱效應。尤其，藉由提供在其中使用具有如本文所述之熱傳導係數k的材料，使由振盪晶體轉移至固持件的熱傳有所提升的測量組件，高溫導致沉積速率之測量之品質、準確性及穩定性之負面效應可減少或甚至消除。再者，測量組件（特別是振盪晶體）的冷卻能力相較於傳統之振盪晶體測量系統可獲得改善。因此，使用根據本文所述實施例之用於測量沉積速率之測量組件可有助於高品質之顯示器製造，特別是OLED製造。Illustratively referring to FIG. 1, a measurement assembly 100 for measuring a deposition rate of a deposited material according to embodiments described herein includes an oscillating crystal 110 and a holder 120 for measuring a deposition rate, the holder 120 It is used to support the oscillating crystal 110. The holder 120 may include a material having a heat transfer coefficient k greater than 30 W/(mK). In particular, the holder may comprise a material having a thermal conductivity k greater than 50 W/(mK), more particularly a material having a thermal conductivity k greater than 70 W/(mK), for example a material greater than 150 W/(mK). Therefore, the thermal effect of the oscillating crystal which reduces the measurement accuracy can be reduced. In particular, by providing a measurement component in which the heat transfer from the oscillating crystal to the holder is improved by using a material having a heat transfer coefficient k as described herein, the high temperature results in the quality, accuracy, and accuracy of the measurement of the deposition rate. The negative effects of stability can be reduced or even eliminated. Furthermore, the cooling capacity of the measuring component (especially the oscillating crystal) can be improved compared to conventional oscillating crystal measuring systems. Thus, the use of measurement components for measuring deposition rates in accordance with embodiments described herein can facilitate high quality display manufacturing, particularly OLED fabrication.
根據可與本文所述其它實施例結合之數個實施例，固持件120之材料包括選自於由銅、鋁、銅合金、鋁合金、黃銅、鐵、銀、銀合金、金、金合金、鎂、鎢、矽碳化物、氮化鋁或其它具有熱傳導係數k大於30 W/(mK)、特別是大於50 W/(mK)、更特別是大於70 W/(mK)之材料所組成之群組之至少一材料，舉例為大於150 W/(mK)之材料。因此，藉由提供具有固持件之測量組件且固持件包括如本文所述之材料，可提升由振盪晶體轉移至固持件的熱傳，如此可改善沉積速率之測量之品質、準確性及穩定性。尤其，藉由提供包括如本文所述用於支承振盪晶體之材料的固持件，振盪晶體之熱波動可減少或甚至消除。舉例來說，根據本文所述實施例，可達成少於0.50 K (Kelvin)之熱波動，特別是少於0.25 K之熱波動，特別是少於0.10 K之熱波動，更特別是少於0.05 K之熱波動。According to several embodiments, which may be combined with other embodiments described herein, the material of the holder 120 comprises a material selected from the group consisting of copper, aluminum, copper alloys, aluminum alloys, brass, iron, silver, silver alloys, gold, gold alloys. , magnesium, tungsten, niobium carbide, aluminum nitride or other materials having a thermal conductivity k greater than 30 W/(mK), in particular greater than 50 W/(mK), more particularly greater than 70 W/(mK) At least one material of the group is exemplified by a material greater than 150 W/(mK). Thus, by providing a measurement assembly having a holder and the holder comprising a material as described herein, heat transfer from the oscillating crystal to the holder can be enhanced, thereby improving the quality, accuracy and stability of the measurement of the deposition rate. . In particular, by providing a holder comprising a material for supporting an oscillating crystal as described herein, thermal fluctuations of the oscillating crystal can be reduced or even eliminated. For example, according to the embodiments described herein, thermal fluctuations of less than 0.50 K (Kelvin), in particular thermal fluctuations of less than 0.25 K, in particular thermal fluctuations of less than 0.10 K, more particularly less than 0.05, can be achieved. The heat of K is fluctuating.
根據可與本文所述其它實施例結合之數個實施例，振盪晶體110可配置在固持件120之內。範例性繪示於第2A至2C圖，固持件120中可具有測量開孔121。尤其，測量開孔121可裝配且配置，使得已蒸發材料可沉積於振盪晶體上，用以測量已蒸發材料之沉積速率。The oscillating crystal 110 can be disposed within the holder 120 in accordance with several embodiments that can be combined with other embodiments described herein. Illustrated in Figures 2A through 2C, the holder 120 can have a measurement opening 121 therein. In particular, the measurement opening 121 can be assembled and configured such that evaporated material can be deposited on the oscillating crystal to measure the deposition rate of the evaporated material.
範例性繪示於第2A圖，根據可與本文所述其它實施例結合之數個實施例，測量組件100可包括熱交換器132。特別是，熱交換器132可配置於固持件120中，例如在振盪晶體110旁或相鄰於振盪晶體110。或者，熱交換器可配置於固持件的外表面。熱交換器132可裝配以與振盪晶體及/或固持件120進行熱交換。舉例來說，熱交換器可包括管件，冷卻流體可提供而通過管件。冷卻流體可為液體或氣體，液體例如是水，氣體例如是空氣。尤其冷卻流體可被冷卻為壓縮空氣。根據可與本文所述其它實施例結合之數個實施例，熱交換器132可裝配來冷卻固持件120及/或振盪晶體110至15°C或更低的溫度，特別是10°C或更低（例如8°C）的溫度，更特別是5°C或更低的溫度。因此，藉由提供具有如本文所述之熱交換器的測量組件，高溫導致沉積速率之測量之品質、準確性及穩定性之負面效應可減少或甚至消除。特別地，藉由提供具有如本文所述之熱交換器的測量組件，振盪晶體之熱波動可減少或甚至消除，如此可有益於沉積速率之量測準確性。Illustratively depicted in FIG. 2A, the measurement assembly 100 can include a heat exchanger 132 in accordance with several embodiments that can be combined with other embodiments described herein. In particular, the heat exchanger 132 can be disposed in the holder 120, such as adjacent to or adjacent to the oscillating crystal 110. Alternatively, the heat exchanger can be disposed on the outer surface of the holder. The heat exchanger 132 can be assembled to exchange heat with the oscillating crystal and/or the holder 120. For example, the heat exchanger can include a tubular member through which a cooling fluid can be supplied. The cooling fluid can be a liquid or a gas, such as water, such as air. In particular, the cooling fluid can be cooled to compressed air. According to several embodiments, which may be combined with other embodiments described herein, the heat exchanger 132 may be configured to cool the holder 120 and/or the oscillating crystal 110 to a temperature of 15 ° C or less, particularly 10 ° C or more. Low (e.g., 8 ° C) temperature, more particularly 5 ° C or lower. Thus, by providing a measurement assembly having a heat exchanger as described herein, the negative effects of high temperature resulting in the quality, accuracy, and stability of the measurement of deposition rate can be reduced or even eliminated. In particular, by providing a measurement assembly having a heat exchanger as described herein, thermal fluctuations in the oscillating crystal can be reduced or even eliminated, which can be beneficial for measurement accuracy of the deposition rate.
範例性參照第2B圖，根據可與本文所述其它實施例結合之數個實施例，測量組件100可包括溫度感測器131，用以測量振盪晶體110之溫度。額外地或選擇性地，溫度感測器可配置或裝配來測量固持件120之溫度。藉由提供具有本文所述之溫度感測器之測量組件，可取得有關於測量組件之溫度的資訊，使振盪晶體之測量易於不準確之臨界溫度可偵測出來。因此，在測量組件（特別是固持件及/或振盪晶體）之臨界溫度係藉由溫度感測器偵測出來之情況中，可開始適當的反應，例如是藉由應用如本文所述之熱交換器之冷卻，如此可有益於沉積速率之量測準確性。Illustratively with reference to FIG. 2B, the measurement assembly 100 can include a temperature sensor 131 for measuring the temperature of the oscillating crystal 110, according to several embodiments that can be combined with other embodiments described herein. Additionally or alternatively, the temperature sensor can be configured or assembled to measure the temperature of the holder 120. By providing a measurement assembly having a temperature sensor as described herein, information about the temperature of the measurement component can be obtained so that the critical temperature at which the measurement of the oscillating crystal is susceptible to inaccuracies can be detected. Therefore, in the case where the critical temperature of the measuring component (especially the holding member and/or the oscillating crystal) is detected by the temperature sensor, an appropriate reaction can be started, for example, by applying heat as described herein. The cooling of the exchanger can be beneficial for the measurement accuracy of the deposition rate.
溫度感測器131可額外地或選擇性地裝配來偵測振盪晶體110及/或固持件120之熱波動。尤其，溫度感測器131可裝配來偵測少於0.50 K (Kelvin)之熱波動，特別是少於0.25 K之熱波動，特別是少於0.10 K之熱波動，更特別是少於0.05 K之熱波動。因此，溫度感測器131可偵測振盪晶體110及/或固持件120之臨界熱波動。尤其，使振盪晶體之測量易於不準確之臨界熱波動可由溫度感測器131所偵測。因此，在特別是固持件及/或振盪晶體之臨界熱波動係由溫度感測器偵測出來之情況中，可開始適當的反應，例如是藉由應用如本文所述之熱交換器之冷卻，如此可有益於沉積速率之量測準確性。The temperature sensor 131 can be additionally or selectively assembled to detect thermal fluctuations of the oscillating crystal 110 and/or the holder 120. In particular, the temperature sensor 131 can be equipped to detect thermal fluctuations of less than 0.50 K (Kelvin), in particular thermal fluctuations of less than 0.25 K, in particular thermal fluctuations of less than 0.10 K, more particularly less than 0.05 K The heat is fluctuating. Therefore, the temperature sensor 131 can detect the critical thermal fluctuation of the oscillating crystal 110 and/or the holder 120. In particular, critical thermal fluctuations that make the measurement of the oscillating crystal susceptible to inaccuracies can be detected by the temperature sensor 131. Thus, in particular in the case where the critical thermal fluctuations of the holder and/or the oscillating crystal are detected by the temperature sensor, an appropriate reaction can be initiated, for example by applying a heat exchanger as described herein. This can be beneficial for the measurement accuracy of the deposition rate.
根據可與本文所述其它實施例結合之數個實施例，測量組件100可包括溫度控制系統130，用以控制振盪晶體110之溫度及/或固持件120之溫度。特別是，溫度控制系統130可包括一或多個溫度感測器131、熱交換器132及控制器133。如第2C圖中所範例性繪示，控制器133可連接於溫度感測器131，用以接收由溫度感測器131所測量之資料。再者，控制器133可連接於熱交換器132，用以控制固持件120及/或振盪晶體110之溫度。因此，控制器可裝配用以依據溫度感測器131所測量之溫度，來控制固持件120及/或振盪晶體110之溫度。舉例來說，在溫度感測器131偵測出使振盪晶體之測量易於不準確之臨界溫度的情況中，控制器可開始產生控制訊號至熱交換器132，以冷卻固持件120及/或振盪晶體110。因此，在振盪晶體之理想測量溫度（例如低於15°C，特別是低於10°C，更特別是低於5°C）係由溫度感測器131偵測出來之情況中，藉由發送對應之控制訊號至熱交換器可停止先前所啟動之冷卻，如此可停止冷卻。藉由提供具有如本文所述之溫度控制系統的測量組件，高溫導致沉積速率之測量之品質、準確性及穩定性之負面效應可減少或甚至消除。According to several embodiments, which can be combined with other embodiments described herein, the measurement assembly 100 can include a temperature control system 130 for controlling the temperature of the oscillating crystal 110 and/or the temperature of the holder 120. In particular, temperature control system 130 can include one or more temperature sensors 131, heat exchanger 132, and controller 133. As exemplarily shown in FIG. 2C, the controller 133 can be connected to the temperature sensor 131 for receiving the data measured by the temperature sensor 131. Moreover, the controller 133 can be coupled to the heat exchanger 132 for controlling the temperature of the holder 120 and/or the oscillating crystal 110. Therefore, the controller can be configured to control the temperature of the holder 120 and/or the oscillating crystal 110 in accordance with the temperature measured by the temperature sensor 131. For example, in the case where the temperature sensor 131 detects a critical temperature that makes the measurement of the oscillating crystal easy to be inaccurate, the controller may start generating a control signal to the heat exchanger 132 to cool the holder 120 and/or oscillate. Crystal 110. Therefore, in the case where the ideal measurement temperature of the oscillating crystal (for example, lower than 15 ° C, particularly lower than 10 ° C, more specifically lower than 5 ° C) is detected by the temperature sensor 131, Sending the corresponding control signal to the heat exchanger stops the previously initiated cooling, thus stopping the cooling. By providing a measurement assembly having a temperature control system as described herein, the negative effects of high temperature resulting in the quality, accuracy, and stability of the measurement of the deposition rate can be reduced or even eliminated.
根據可與本文所述其它實施例結合之數個實施例，測量組件100可包括遮板140，用以阻擋已蒸發材料，已蒸發材料係由測量出口150提供，測量出口150係用以提供已蒸發材料至振盪晶體110，如第3A及3B圖中所範例性繪示。特別地，遮板140可裝配成從遮板之第一狀態（第3A圖）可移動至遮板之第二狀態（第3B圖），可移動例如是線性可移動，也就是說，遮板可為可移動的遮板。或者，遮板可裝配成從第一狀態可轉動至第二狀態。舉例來說，遮板之第一狀態可為開啟狀態，遮板140在第一狀態中係不阻擋提供已蒸發材料至振盪晶體110之測量出口150，如第3A圖中所範例性繪示。因此，遮板140之第二狀態可為遮板140阻擋測量出口150之狀態，使得振盪晶體110不受通過測量出口150而提供之已蒸發材料的影響，如第3B圖中所範例性繪示。藉由提供具有遮板之測量組件，測量組件（特別是振盪晶體及/或固持件）可不受已蒸發材料之高溫的影響。因此，高溫導致沉積速率之測量之品質、準確性及穩定性之負面效應可減少或甚至消除。According to several embodiments, which can be combined with other embodiments described herein, the measurement assembly 100 can include a shutter 140 to block vaporized material, the vaporized material is provided by the measurement outlet 150, and the measurement outlet 150 is used to provide The material is evaporated to the oscillating crystal 110 as exemplarily illustrated in Figures 3A and 3B. In particular, the shutter 140 can be assembled to be movable from a first state of the shutter (Fig. 3A) to a second state of the shutter (Fig. 3B), the movable being, for example, linearly movable, that is, the shutter Can be a movable shutter. Alternatively, the shutter can be assembled to be rotatable from the first state to the second state. For example, the first state of the shutter may be an open state, and the shutter 140 does not block the measurement outlet 150 providing the evaporated material to the oscillating crystal 110 in the first state, as exemplarily illustrated in FIG. 3A. Therefore, the second state of the shutter 140 may be such that the shutter 140 blocks the state of the measurement outlet 150 such that the oscillating crystal 110 is not affected by the evaporated material provided by the measurement outlet 150, as exemplified in FIG. 3B. . By providing a measurement assembly with a shutter, the measurement assembly (especially the oscillating crystal and/or the holder) can be unaffected by the high temperatures of the evaporated material. Thus, the negative effects of high quality resulting in the measurement of deposition rate quality, accuracy and stability can be reduced or even eliminated.
範例性參照第4圖，根據可與本文所述其它實施例結合之數個實施例，遮板140可包括熱保護遮罩物141，用以保護振盪晶體110及/或固持件120免於受到通過測量出口150而提供之已蒸發材料之熱的影響。如第4圖中所範例性繪示，熱保護遮罩物141可配置於遮板140面對測量出口150之一側上。特別是，熱保護遮罩物141可裝配以用於反射由已蒸發材料所提供之熱能，已蒸發材料係通過測量出口150提供。根據可與本文所述其它實施例結合之數個實施例，熱保護遮罩物141可為板材，板材例如是金屬板。或者，熱保護遮罩物141可包括更多個板材的其中二者，特別是更多個金屬板的其中二者，此更多個板材的其中二者可相對於彼此間隔例如是0.1 mm或更多之縫隙。舉例來說，金屬板可具有0.1 mm至0.3 mm之厚度。特別是，熱保護遮罩物可包括含鐵或不含鐵材料，例如是選自於由銅（Cu）、鋁（Al）、銅合金、鋁合金、黃銅、鐵、鈦（Ti）、陶瓷及其它合適材料所組成之群組之至少一材料。再者，遮板140可包括至少一冷卻元件142，用以冷卻遮板140。冷卻元件142可包括至少一管，用以提供冷卻流體，以冷卻遮板140。By way of example with reference to FIG. 4, according to several embodiments that may be combined with other embodiments described herein, the shutter 140 may include a thermal shield 141 to protect the oscillating crystal 110 and/or the holder 120 from being subjected to The effect of the heat of the evaporated material is provided by measuring the outlet 150. As exemplarily illustrated in FIG. 4, the thermal protection mask 141 may be disposed on one side of the shutter 140 facing the measurement outlet 150. In particular, the thermal protection mask 141 can be assembled to reflect the thermal energy provided by the evaporated material, which is provided through the measurement outlet 150. According to several embodiments, which may be combined with other embodiments described herein, the thermal shield 141 may be a sheet material such as a metal sheet. Alternatively, the thermal protection mask 141 may comprise two of the more sheets, in particular two of the more sheets, the two of which may be spaced apart from each other by, for example, 0.1 mm or More gaps. For example, the metal sheet may have a thickness of 0.1 mm to 0.3 mm. In particular, the thermal protection mask may comprise an iron-containing or non-ferrous material, for example selected from the group consisting of copper (Cu), aluminum (Al), copper alloys, aluminum alloys, brass, iron, titanium (Ti), At least one material of the group consisting of ceramics and other suitable materials. Furthermore, the shutter 140 can include at least one cooling element 142 for cooling the shutter 140. The cooling element 142 can include at least one tube for providing a cooling fluid to cool the shutter 140.
因此，根據本文所述實施例之包括熱保護遮罩物之測量組件可有利於保護振盪晶體而特別是在遮板係為關閉狀態時免受到已蒸發材料之溫度（例如是熱）之影響。特別是，當遮板（特別是包括熱保護遮罩物）係為關閉狀態時，振盪晶體110及/或固持件120可冷卻下來。因此，藉由應用包括熱保護遮罩物之遮板，可增加振盪晶體及/或固持件之冷卻速率，如此可有益於測量組件的表現。Thus, a measurement assembly including a thermally protective mask in accordance with embodiments described herein may be advantageous for protecting an oscillating crystal, particularly when the shutter is in a closed state, from the temperature of the evaporated material (eg, heat). In particular, the oscillating crystal 110 and/or the holder 120 can be cooled down when the shutter (especially including the thermal protection mask) is in the closed state. Therefore, by applying a shutter including a thermal protection mask, the cooling rate of the oscillating crystal and/or the holder can be increased, which can be beneficial for measuring the performance of the assembly.
第5A和5B圖繪示根據本文所述實施例之蒸發源200的側視圖。根據數個實施例，蒸發源200包括蒸發坩鍋210，其中蒸發坩鍋係裝配以蒸發一材料。再者，蒸發源200包括分佈管220，分佈管220具有一或多個出口222，此一或多個出口222係沿著分佈管之長度設置，用以提供已蒸發材料，如第5B圖中所範例性繪示。根據數個實施例，分佈管220例如是經由蒸汽導管232流體連通於蒸發坩鍋210，如第5B圖中之箭頭242所範例性繪示。蒸汽導管232可在分佈管之中央部或在分佈管之下端與分佈管之上端之間的另一位置設置於分佈管220。再者，根據本文所述實施例之蒸發源200包括根據本文所述之測量組件100。因此，蒸發源200係提供而讓沉積速率可以高準確性之方式測量。因此，應用根據本文所述實施例之蒸發源200可有利於高品質之顯示器製造，特別是OLED製造。5A and 5B are side views of an evaporation source 200 in accordance with embodiments described herein. According to several embodiments, the evaporation source 200 includes an evaporation crucible 210 in which an evaporation crucible is assembled to evaporate a material. Furthermore, the evaporation source 200 includes a distribution tube 220 having one or more outlets 222 disposed along the length of the distribution tube for providing evaporated material, as in Figure 5B. Exemplary illustrations. According to several embodiments, the distribution tube 220 is in fluid communication with the evaporation crucible 210, for example, via a steam conduit 232, as exemplified by arrow 242 in Figure 5B. The steam conduit 232 can be disposed in the distribution tube 220 at a central portion of the distribution tube or at another location between the lower end of the distribution tube and the upper end of the distribution tube. Moreover, evaporation source 200 in accordance with embodiments described herein includes measurement assembly 100 in accordance with the teachings herein. Therefore, the evaporation source 200 is provided to allow the deposition rate to be measured with high accuracy. Thus, the application of evaporation source 200 in accordance with embodiments described herein can facilitate high quality display manufacturing, particularly OLED manufacturing.
如第5A圖中所範例性繪示，根據可與本文所述其它實施例結合之數個實施例，分佈管220可為細長管件，包括加熱元件215。蒸發坩鍋210可為用於以加熱單元225蒸發材料的一水庫（reservoir），此材料例如是有機材料。舉例來說，加熱單元225可提供在蒸發坩鍋210之內部空間中。根據可與本文所述其它實施例結合之數個實施例，分佈管220可提供接線源。舉例來說，如第5B圖中所範例性繪示，例如是噴嘴之數個出口222可沿著至少一接線配置。根據替代性實施例（未繪示），可提供一個沿著此至少一接線延伸之細長開孔，細長開孔例如是狹縫。根據可與本文所述其它實施例結合之一些實施例，接線源可本質上垂直地延伸。As exemplarily illustrated in FIG. 5A, the distribution tube 220 can be an elongated tubular member, including a heating element 215, according to several embodiments that can be combined with other embodiments described herein. The evaporation crucible 210 may be a reservoir for evaporating material with the heating unit 225, such as an organic material. For example, the heating unit 225 can be provided in the interior space of the evaporation crucible 210. Distribution tube 220 can provide a source of wiring in accordance with several embodiments that can be combined with other embodiments described herein. For example, as exemplarily illustrated in FIG. 5B, for example, a plurality of outlets 222 of the nozzles may be disposed along at least one of the wires. According to an alternative embodiment (not shown), an elongated opening extending along the at least one wire may be provided, the elongated opening being, for example, a slit. According to some embodiments, which may be combined with other embodiments described herein, the wiring source may extend substantially perpendicularly.
根據可與本文所述其它實施例結合之一些實施例，分佈管220之長度可對應於基板之高度，材料係於沉積設備中沉積於此基板上。或者，分佈管220之長度可較基板之高度長，例如至少長10%或甚至20%，材料係將沉積於此基板上。因此，在基板之上端及/或基板之下端可以提供均勻的沉積。舉例來說，分佈管220之長度可以為1.3 m或以上，例如是2.5 m或以上。According to some embodiments, which may be combined with other embodiments described herein, the length of the distribution tube 220 may correspond to the height of the substrate onto which the material is deposited in the deposition apparatus. Alternatively, the length of the distribution tube 220 can be longer than the height of the substrate, such as at least 10% or even 20%, and the material will be deposited on the substrate. Thus, uniform deposition can be provided at the upper end of the substrate and/or at the lower end of the substrate. For example, the distribution tube 220 can have a length of 1.3 m or more, for example, 2.5 m or more.
根據可與本文所述其它實施例結合之數個實施例，蒸發坩鍋210可提供於分佈管220之下端，如第5A圖中範例性繪示。例如是有機材料之材料可在蒸發坩鍋210中蒸發。已蒸發材料可於分佈管之底部進入分佈管220，且可本質上側向地導引通過分佈管220中之此些出口222而例如是朝向本質上垂直的基板。範例性參照第5B圖，根據本文所述實施例之測量組件100可提供於分佈管220之上部，尤其是位在分佈管220之上端。According to several embodiments, which may be combined with other embodiments described herein, the evaporation crucible 210 may be provided at the lower end of the distribution tube 220, as exemplarily illustrated in Figure 5A. For example, a material of an organic material may be evaporated in the evaporation crucible 210. The evaporated material can enter the distribution tube 220 at the bottom of the distribution tube and can be directed laterally through the outlets 222 in the distribution tube 220, for example, toward a substantially vertical substrate. Illustratively with reference to FIG. 5B, a measurement assembly 100 in accordance with embodiments described herein can be provided over the upper portion of the distribution tube 220, particularly at the upper end of the distribution tube 220.
範例性參照第5B圖，根據可與本文所述其它實施例結合之數個實施例，測量出口150可設置於分佈管220之一壁中或是在分佈管之端部中，例如是在分佈管之背側224A的一壁中，如第5B和6圖中範例性繪示。或者，測量出口150可設置在分佈管220之頂壁224C中。如由第6圖中之箭頭151範例性所示，已蒸發材料可從分佈管220之內側經由測量出口150提供至測量組件100。根據可與本文所述其它實施例結合之數個實施例，測量出口150可具有從0.5 mm至4 mm之開孔。測量出口150可包括噴嘴。舉例來說，噴嘴可包括可調整開孔，用以調整提供至測量組件100之已蒸發材料的流量。特別是，噴嘴可裝配以提供一測量流量，此測量流量係選自於一範圍，此範圍係下限為蒸發源所提供之總流量的1/70，特別是下限為蒸發源所提供之總流量的1/60，更特別是下限為蒸發源所提供之總流量的1/50以及上限為蒸發源所提供之總流量的1/40，特別是上限為蒸發源所提供之總流量的1/30，更特別是上限為蒸發源所提供之總流量的1/25之間。舉例來說，噴嘴可裝配以提供一測量流量，此測量流量為蒸發源所提供之總流量的1/54。Illustratively with reference to Figure 5B, the measurement outlet 150 can be disposed in one of the walls of the distribution tube 220 or in the end of the distribution tube, such as in a distribution, according to several embodiments that can be combined with other embodiments described herein. A wall of the back side 224A of the tube is exemplarily shown in Figures 5B and 6. Alternatively, the measurement outlet 150 can be disposed in the top wall 224C of the distribution tube 220. As exemplarily shown by arrow 151 in FIG. 6, the evaporated material may be provided from the inside of the distribution tube 220 to the measurement assembly 100 via the measurement outlet 150. According to several embodiments, which can be combined with other embodiments described herein, the measurement outlet 150 can have an opening from 0.5 mm to 4 mm. The measurement outlet 150 can include a nozzle. For example, the nozzle can include an adjustable opening to adjust the flow of evaporated material provided to the measurement assembly 100. In particular, the nozzle can be assembled to provide a measured flow rate selected from a range which is 1/70 of the total flow rate provided by the evaporation source, in particular the lower limit is the total flow provided by the evaporation source. 1/60, more particularly the lower limit is 1/50 of the total flow rate provided by the evaporation source and the upper limit is 1/40 of the total flow rate provided by the evaporation source, especially the upper limit is 1/ of the total flow rate provided by the evaporation source 30, and more particularly the upper limit is between 1/25 of the total flow rate provided by the evaporation source. For example, the nozzle can be assembled to provide a measured flow that is 1/54 of the total flow provided by the evaporation source.
第6圖繪示根據本文所述實施例之蒸發源200的透視圖。如第6圖中範例性繪示，分佈管220可設計成三角形之形狀。三角形之形狀之分佈管220在兩個或多個分佈管係彼此相鄰配置之情況中可具有優點。特別是，三角形之形狀之分佈管220係讓相鄰分佈管之出口盡可能地彼此靠近。此舉讓從不同分佈管之不同材料達到改善之混合，例如是針對兩個、三個或甚至多個不同材料之共蒸發（co-evaporation）的情況。如第6圖中範例性繪示，根據可與本文所述其它實施例結合之數個實施例，測量組件100可設置在分佈管220之中空空間中，特別是在分佈管之上端。Figure 6 depicts a perspective view of an evaporation source 200 in accordance with embodiments described herein. As exemplarily illustrated in Fig. 6, the distribution tube 220 can be designed in the shape of a triangle. The distribution tube 220 of the shape of a triangle may have advantages in the case where two or more distribution tubes are arranged adjacent to each other. In particular, the distribution tube 220 of the shape of a triangle is such that the outlets of adjacent distribution tubes are as close as possible to each other. This allows for improved mixing from different materials of different distribution tubes, for example for co-evaporation of two, three or even many different materials. As exemplarily illustrated in Figure 6, the measurement assembly 100 can be disposed in the hollow space of the distribution tube 220, particularly at the upper end of the distribution tube, in accordance with several embodiments that can be combined with other embodiments described herein.
根據可與本文所述其它實施例結合之數個實施例，分佈管220可包括數個壁，例如是側壁224B和分佈管之背側224A的一壁，此些壁可以由加熱元件215所加熱。加熱元件215可安裝或附著於分佈管220之數個壁。根據可與本文所述其它實施例結合之一些實施例，蒸發源200可包括遮罩物204。遮罩物204可減少朝向沉積區之熱輻射。再者，遮罩物204可藉由冷卻元件216來冷卻。舉例來說，冷卻元件216可安裝於遮罩物204且可包括用於冷卻流體的導管，例如是一管。According to several embodiments, which can be combined with other embodiments described herein, the distribution tube 220 can include a plurality of walls, such as a wall 224B and a wall of the back side 224A of the distribution tube, which walls can be heated by the heating element 215 . The heating element 215 can be mounted or attached to several walls of the distribution tube 220. According to some embodiments, which may be combined with other embodiments described herein, the evaporation source 200 may include a mask 204. The mask 204 can reduce heat radiation toward the deposition zone. Furthermore, the mask 204 can be cooled by the cooling element 216. For example, the cooling element 216 can be mounted to the shroud 204 and can include a conduit for cooling the fluid, such as a tube.
第7圖繪示根據本文所述實施例之用於在真空腔室310中供應材料於基板333之沉積設備300的上視圖。根據可與本文所述其它實施例結合之數個實施例，如本文所述之蒸發源200可提供於真空腔室310中之例如是軌道上，軌道舉例為線性導件320或環狀軌道。軌道或線性導件320可裝配而用於蒸發源200之平移運動。因此，根據可與本文所述其它實施例結合之數個實施例，用於平移運動之驅動器可提供給在真空腔室310中之軌道及/或線性導件320的蒸發源200。根據可與本文所述其它實施例結合之數個實施例，例如是閘閥的第一閥305可設置而提供對相鄰真空腔室（未繪示於第7圖中）之真空密封。第一閥可開啟而用以傳送基板333或遮罩332至真空腔室310中或離開真空腔室310。FIG. 7 illustrates a top view of a deposition apparatus 300 for supplying material to a substrate 333 in a vacuum chamber 310 in accordance with embodiments described herein. According to several embodiments, which may be combined with other embodiments described herein, the evaporation source 200 as described herein may be provided in a vacuum chamber 310, such as a track, such as a linear guide 320 or an annular track. The track or linear guide 320 can be assembled for translational movement of the evaporation source 200. Thus, in accordance with several embodiments that can be combined with other embodiments described herein, a driver for translational motion can be provided to the evaporation source 200 of the track and/or linear guide 320 in the vacuum chamber 310. According to several embodiments, which may be combined with other embodiments described herein, a first valve 305, such as a gate valve, may be provided to provide a vacuum seal to an adjacent vacuum chamber (not shown in Figure 7). The first valve can be opened to transport the substrate 333 or the mask 332 into or out of the vacuum chamber 310.
根據可與本文所述其它實施例結合之一些實施例，其它真空腔室可設置而相鄰於真空腔室310，其它真空腔室例如是維護真空腔室311，如第7圖中範例性繪示。因此，真空腔室310及維護真空腔室311可以第二閥307連接。第二閥307可裝配以開啟及關閉在真空腔室310和維護真空腔室311之間的真空密封。當第二閥307係為開啟狀態時，蒸發源200可傳送至維護真空腔室311。之後，第二閥307可關閉以提供在真空腔室310與維護真空腔室311之間的真空密封。若第二閥307係關閉時，維護真空腔室311可排氣且開啟來進行蒸發源200之維護而不破壞真空腔室310中之真空。According to some embodiments, which may be combined with other embodiments described herein, other vacuum chambers may be disposed adjacent to the vacuum chamber 310, such as the maintenance vacuum chamber 311, as exemplarily depicted in FIG. Show. Therefore, the vacuum chamber 310 and the maintenance vacuum chamber 311 can be connected by the second valve 307. The second valve 307 can be configured to open and close a vacuum seal between the vacuum chamber 310 and the maintenance vacuum chamber 311. When the second valve 307 is in the open state, the evaporation source 200 can be transferred to the maintenance vacuum chamber 311. Thereafter, the second valve 307 can be closed to provide a vacuum seal between the vacuum chamber 310 and the maintenance vacuum chamber 311. If the second valve 307 is closed, the maintenance vacuum chamber 311 can be vented and opened for maintenance of the evaporation source 200 without damaging the vacuum in the vacuum chamber 310.
如第7圖中範例性繪示，兩個基板可支撐於真空腔室310中之各自之傳送軌道上。再者，可提供兩個軌道，用以提供遮罩於其上。因此，在塗佈期間，基板333可由各自之遮罩進行遮蔽。舉例來說，遮罩可提供於遮罩框架331中，以支承遮罩332於預定位置中。As exemplarily shown in FIG. 7, the two substrates can be supported on respective transport tracks in the vacuum chamber 310. Furthermore, two tracks can be provided to provide a mask thereon. Thus, during coating, the substrate 333 can be masked by a respective mask. For example, a mask may be provided in the mask frame 331 to support the mask 332 in a predetermined position.
根據可與本文所述其它實施例結合之一些實施例，基板333可由基板支撐件326支撐，基板支撐件326可連接於對準單元312。對準單元312可調整基板333相對於遮罩332之位置。如第7圖中所範例性繪示，基板支撐件326可連接於對準單元312。因此，基板可相對於遮罩332移動，以在材料沉積期間提供基板與遮罩之間合適的對準，而有利於高品質之顯示器製造。遮罩332及/或支承遮罩332之遮罩框架331可選擇性或額外地連接於對準單元312。因此，遮罩332可相對於基板333定位或者遮罩332及基板333兩者可相對於彼此定位。According to some embodiments, which may be combined with other embodiments described herein, the substrate 333 may be supported by a substrate support 326 that may be coupled to the alignment unit 312. The alignment unit 312 can adjust the position of the substrate 333 relative to the mask 332. As exemplarily illustrated in FIG. 7, the substrate support 326 can be coupled to the alignment unit 312. Thus, the substrate can be moved relative to the mask 332 to provide proper alignment between the substrate and the mask during material deposition, facilitating high quality display fabrication. The mask 332 and/or the mask frame 331 supporting the mask 332 may be selectively or additionally coupled to the alignment unit 312. Thus, the mask 332 can be positioned relative to the substrate 333 or both the mask 332 and the substrate 333 can be positioned relative to each other.
如第7圖中所示，線性導件320可提供蒸發源200之平移運動之方向。在蒸發源200之兩側上可各提供遮罩332。遮罩可本質上平行於平移運動之方向延伸。再者，在蒸發源200之相對側的基板亦可本質上平行於平移運動之方向延伸。如第7圖中範例性所示，設置於沉積設備300之真空腔室310中之蒸發源200可包括支撐件202，支撐件202可裝配以用於沿著線性導件320之平移運動。舉例來說，支撐件202可支撐兩個蒸發坩鍋和兩個分佈管220，分佈管220設置於蒸發坩鍋210之上方。因此，在蒸發坩鍋中產生之蒸汽可向上地移動且離開分佈管之此一或多個出口。As shown in FIG. 7, the linear guide 320 can provide the direction of the translational motion of the evaporation source 200. A mask 332 may be provided on each side of the evaporation source 200. The mask may extend substantially parallel to the direction of the translational motion. Furthermore, the substrate on the opposite side of the evaporation source 200 may also extend substantially parallel to the direction of translational motion. As exemplarily shown in FIG. 7, the evaporation source 200 disposed in the vacuum chamber 310 of the deposition apparatus 300 can include a support 202 that can be assembled for translational movement along the linear guide 320. For example, the support member 202 can support two evaporation crucibles and two distribution tubes 220 disposed above the evaporation crucible 210. Thus, the steam generated in the evaporation crucible can move up and away from the one or more outlets of the distribution tube.
因此，如本文所述之沉積設備之數個實施例提供了改良之高品質之顯示器製造，特別是OLED製造。Thus, several embodiments of deposition apparatus as described herein provide improved high quality display fabrication, particularly OLED fabrication.
第8圖繪示根據本文所述實施例之用於測量已蒸發材料之沉積速率之方法的方塊圖。根據數個實施例，用於測量已蒸發材料之沉積速率的方法400包括蒸發例如是有機材料之材料之步驟410、供應已蒸發材料之第一部份至基板之步驟420、轉移已蒸發材料之第二部分至振盪晶體110之步驟430，以及使用根據本文所述實施例之測量組件100測量沉積速率之步驟440。因此，藉由應用根據本文所述實施例之用於測量已蒸發材料之沉積速率的方法，可高準確地測量沉積速率。特別是，藉由應用如本文所述之用於測量沉積速率的方法，可減少會降低測量準確性之振盪晶體的熱效應。尤其，高溫導致沉積速率之測量之品質、準確性及穩定性之負面效應可減少或甚至消除。Figure 8 is a block diagram of a method for measuring the deposition rate of an evaporated material in accordance with embodiments described herein. According to several embodiments, the method 400 for measuring the deposition rate of an evaporated material includes the step 410 of evaporating a material such as an organic material, the step 420 of supplying a first portion of the evaporated material to the substrate, and transferring the evaporated material. The second portion is to step 430 of oscillating crystal 110, and step 440 is used to measure deposition rate using measurement assembly 100 in accordance with embodiments described herein. Thus, by applying a method for measuring the deposition rate of an evaporated material according to the embodiments described herein, the deposition rate can be measured with high accuracy. In particular, by applying a method for measuring the deposition rate as described herein, the thermal effect of the oscillating crystal which reduces the measurement accuracy can be reduced. In particular, the negative effects of high quality resulting in the measurement of deposition rate quality, accuracy and stability can be reduced or even eliminated.
根據可與本文所述其它實施例結合之數個實施例，蒸發材料之步驟410包括使用如本文所述之蒸發坩鍋210。再者，供應已蒸發材料之第一部份至基板之步驟420可包括使用根據本文實施例之蒸發源200。根據可與本文所述其它實施例結合之數個實施例，轉移已蒸發材料之第二部分至振盪晶體110之步驟430可包括使用如本文所述之測量出口150，特別是噴嘴。特別地，轉移已蒸發材料之第二部分至振盪晶體110之步驟430可包括提供一測量流量，此測量流量係選自於一範圍，此範圍係下限為蒸發源所提供之總流量的1/70，特別是下限為蒸發源所提供之總流量的1/60，更特別是下限為蒸發源所提供之總流量的1/50以及上限為蒸發源所提供之總流量的1/40，特別是上限為蒸發源所提供之總流量的1/30，更特別是上限為蒸發源所提供之總流量的1/25之間。舉例來說，噴嘴可裝配以提供一測量流量，轉移已蒸發材料之第二部分至振盪晶體110之步驟430可包括提供測量流量為蒸發源所提供之總流量的1/54。According to several embodiments, which may be combined with other embodiments described herein, the step 410 of evaporating the material includes using an evaporation crucible 210 as described herein. Further, the step 420 of supplying the first portion of the evaporated material to the substrate can include using the evaporation source 200 according to embodiments herein. According to several embodiments, which can be combined with other embodiments described herein, the step 430 of transferring the second portion of evaporated material to the oscillating crystal 110 can include measuring the outlet 150, particularly the nozzle, as described herein. In particular, the step 430 of transferring the second portion of the evaporated material to the oscillating crystal 110 can include providing a measured flow rate selected from a range that is 1/1 of the total flow rate provided by the evaporation source. 70, in particular the lower limit is 1/60 of the total flow rate provided by the evaporation source, more particularly the lower limit is 1/50 of the total flow rate provided by the evaporation source and the upper limit is 1/40 of the total flow rate provided by the evaporation source, in particular The upper limit is 1/30 of the total flow rate provided by the evaporation source, and more particularly the upper limit is between 1/25 of the total flow rate provided by the evaporation source. For example, the nozzle can be assembled to provide a measured flow rate, and the step 430 of transferring the second portion of the vaporized material to the oscillating crystal 110 can include providing a measured flow rate of 1/54 of the total flow rate provided by the evaporation source.
根據可與本文所述其它實施例結合之數個實施例，測量沉積速率之步驟440可包括與測量組件100進行熱交換，特別是藉由如本文所述之溫度控制系統130進行熱交換。因此，藉由與如本文所述之測量組件進行熱交換，高溫導致沉積速率之測量之品質、準確性及穩定性之負面效應可減少或甚至消除。特別地，藉由與如本文所述之測量組件進行熱交換，振盪晶體之熱波動可減少或甚至消除，如此可有利於沉積速率之測量的準確性。因此，應用如本文所述之用於測量沉積速率的方法，可有助於高品質之顯示器製造，特別是OLED製造。According to several embodiments, which can be combined with other embodiments described herein, the step 440 of measuring the deposition rate can include performing heat exchange with the measurement assembly 100, particularly by temperature control system 130 as described herein. Thus, by heat exchange with a measurement assembly as described herein, the negative effects of high temperature resulting in the quality, accuracy, and stability of the measurement of deposition rate can be reduced or even eliminated. In particular, the thermal fluctuations of the oscillating crystal can be reduced or even eliminated by heat exchange with the measuring assembly as described herein, which can facilitate the accuracy of the measurement of the deposition rate. Thus, the application of the method for measuring the deposition rate as described herein can contribute to high quality display manufacturing, particularly OLED manufacturing.
因此，根據本文所述的數個實施例，用於測量已蒸發材料之沉積速率之測量組件、蒸發源、沉積設備和用於測量沉積速率之方法提供了改良的沉積速率之測量和高品質的顯示器製造，例如是高品質的OLED製造。Thus, according to several embodiments described herein, a measurement component, an evaporation source, a deposition apparatus, and a method for measuring a deposition rate for measuring a deposition rate of an evaporated material provide improved deposition rate measurement and high quality Display manufacturing, for example, is the manufacture of high quality OLEDs.
綜上所述，雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
100‧‧‧測量組件
110‧‧‧振盪晶體
120‧‧‧固持件
121‧‧‧測量開孔
130‧‧‧溫度控制系統
131‧‧‧溫度感測器
132‧‧‧熱交換器
133‧‧‧控制器
140‧‧‧遮板
141‧‧‧熱保護遮罩物
142‧‧‧冷卻元件
150‧‧‧測量出口
151‧‧‧箭頭
200‧‧‧蒸發源
202‧‧‧支撐件
204‧‧‧遮罩物
210‧‧‧蒸發坩鍋
215‧‧‧加熱元件
216‧‧‧冷卻元件
220‧‧‧分佈管
222‧‧‧出口
224A‧‧‧背側
224B‧‧‧側壁
224C‧‧‧頂壁
225‧‧‧加熱單元
232‧‧‧蒸汽導管
242‧‧‧箭頭
300‧‧‧沉積設備
305‧‧‧第一閥
307‧‧‧第二閥
310‧‧‧真空腔室
311‧‧‧維護真空腔室
312‧‧‧對準單元
320‧‧‧線性導件
326‧‧‧基板支撐件
331‧‧‧遮罩框架
332‧‧‧遮罩
333‧‧‧基板
400‧‧‧方法
410、420、430、440‧‧‧步驟100‧‧‧Measurement components
110‧‧‧Oscillation crystal
120‧‧‧ holding parts
121‧‧‧Measurement opening
130‧‧‧ Temperature Control System
131‧‧‧temperature sensor
132‧‧‧ heat exchanger
133‧‧‧ Controller
140‧‧‧ visor
141‧‧‧ Thermal protective coverings
142‧‧‧Cooling element
150‧‧‧Measurement exit
151‧‧‧ arrow
200‧‧‧ evaporation source
202‧‧‧Support
204‧‧‧Mask
210‧‧‧Evaporation crucible
215‧‧‧ heating element
216‧‧‧ cooling element
220‧‧‧Distribution tube
222‧‧‧Export
224A‧‧‧ Back side
224B‧‧‧ side wall
224C‧‧‧ top wall
225‧‧‧heating unit
232‧‧‧ steam conduit
242‧‧‧ arrow
300‧‧‧Deposition equipment
305‧‧‧first valve
307‧‧‧Second valve
310‧‧‧vacuum chamber
311‧‧‧Maintenance vacuum chamber
312‧‧‧Alignment unit
320‧‧‧Linear Guides
326‧‧‧Substrate support
331‧‧‧mask frame
332‧‧‧ mask
333‧‧‧Substrate
400‧‧‧ method
410, 420, 430, 440‧ ‧ steps
為了使本文所述之本揭露的上述特徵可詳細地瞭解，簡要摘錄於上之更具體的說明可參照實施例。所附之圖式係有關於本揭露之實施例，並描述於下方： 第1圖繪示根據本文所述實施例之用於測量已蒸發材料之沉積速率的測量組件的上視圖； 第2A至2C圖繪示根據本文所述實施例之用於測量已蒸發材料之沉積速率的測量組件的側視圖； 第3A圖繪示根據本文所述實施例之測量組件於第一狀態中的示意圖； 第3B圖繪示根據本文所述實施例之測量組件於第二狀態中的側視圖； 第4圖繪示根據本文所述實施例之用於測量已蒸發材料之沉積速率的測量組件的側視圖； 第5A和5B圖繪示根據本文所述實施例之蒸發源的側視圖； 第6圖繪示根據本文所述實施例之蒸發源的透視圖； 第7圖繪示根據本文所述實施例之用於在真空腔室中供應材料於基板之沉積設備的上視圖；以及 第8圖繪示根據本文所述實施例之用於測量已蒸發材料之沉積速率之方法的方塊圖。In order to make the above-described features of the present disclosure described herein in detail, a more detailed description of the present disclosure can be referred to the embodiments. The accompanying drawings are directed to embodiments of the present disclosure and are described below: FIG. 1 is a top view of a measurement assembly for measuring the deposition rate of evaporated material in accordance with embodiments described herein; 2C is a side elevational view of a measurement assembly for measuring a deposition rate of an evaporated material in accordance with embodiments described herein; FIG. 3A is a schematic diagram of a measurement assembly in a first state in accordance with embodiments described herein; 3B is a side elevational view of the measurement assembly in accordance with the embodiments described herein in a second state; and FIG. 4 is a side elevational view of the measurement assembly for measuring the deposition rate of evaporated material in accordance with embodiments described herein; 5A and 5B are side views of an evaporation source according to embodiments described herein; FIG. 6 is a perspective view of an evaporation source according to embodiments described herein; and FIG. 7 is a view of an embodiment according to the embodiments described herein A top view of a deposition apparatus for supplying material to a substrate in a vacuum chamber; and FIG. 8 is a block diagram of a method for measuring a deposition rate of an evaporated material in accordance with embodiments described herein.
100‧‧‧測量組件 100‧‧‧Measurement components
110‧‧‧振盪晶體 110‧‧‧Oscillation crystal
120‧‧‧固持件 120‧‧‧ holding parts
Claims (19)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2015/063637 WO2016202388A1 (en) | 2015-06-17 | 2015-06-17 | Measurement assembly for measuring a deposition rate and method therefore |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201710535A true TW201710535A (en) | 2017-03-16 |
Family
ID=53489936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105118926A TW201710535A (en) | 2015-06-17 | 2016-06-16 | Measurement assembly for measuring a deposition rate, an evaporation source having the same, a deposition apparatus having the same and method therefor |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6640879B2 (en) |
| KR (1) | KR102082193B1 (en) |
| CN (1) | CN107810410A (en) |
| TW (1) | TW201710535A (en) |
| WO (1) | WO2016202388A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019149382A1 (en) * | 2018-02-05 | 2019-08-08 | Applied Materials, Inc. | Deposition apparatus for depositing evaporated material and methods therefor |
| WO2019201434A1 (en) * | 2018-04-18 | 2019-10-24 | Applied Materials, Inc. | Evaporation source for deposition of evaporated material on a substrate, deposition apparatus, method for measuring a vapor pressure of evaporated material, and method for determining an evaporation rate of an evaporated material |
| KR102609982B1 (en) * | 2018-09-19 | 2023-12-04 | 어플라이드 머티어리얼스, 인코포레이티드 | Method for preprocessing vibrating crystals for measuring deposition rate, deposition rate measurement device, evaporation source and deposition apparatus |
| CN112912533B (en) * | 2018-11-28 | 2023-10-24 | 应用材料公司 | Deposition source, deposition apparatus and method for depositing vaporized material |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0734248A (en) * | 1993-07-23 | 1995-02-03 | Toyota Motor Corp | Quartz crystal type film thickness gage |
| US6558735B2 (en) * | 2001-04-20 | 2003-05-06 | Eastman Kodak Company | Reusable mass-sensor in manufacture of organic light-emitting devices |
| JP2005091345A (en) | 2003-08-13 | 2005-04-07 | Fuji Photo Film Co Ltd | Method and device for producing vapor-deposition type phosphor sheet, and vapor deposition type phosphor sheet |
| JP4976087B2 (en) * | 2005-09-15 | 2012-07-18 | 日本電波工業株式会社 | Constant temperature crystal oscillator for high stability |
| JP2008276998A (en) * | 2007-04-26 | 2008-11-13 | Sony Corp | Film thickness sensor, thin film forming device, and manufacturing device and method of organic el display device |
| EP2261388A1 (en) * | 2009-06-12 | 2010-12-15 | Applied Materials Inc. a Corporation of the State of Delaware | Deposition rate monitor device, evaporator, coating installation, method for applying vapor to a substrate and method of operating a deposition rate monitor device |
| JP2012169168A (en) * | 2011-02-15 | 2012-09-06 | Hitachi High-Technologies Corp | Crystal oscillation-type film thickness monitoring device and evaporation source device and thin film deposition system of el material using the same |
| EP2508645B1 (en) * | 2011-04-06 | 2015-02-25 | Applied Materials, Inc. | Evaporation system with measurement unit |
| DE102011111613B4 (en) * | 2011-08-25 | 2013-03-07 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Sensor arrangement for the characterization of plasma coating, plasma etching and plasma treatment processes and methods for determining characteristics in these processes |
| JP2014070969A (en) * | 2012-09-28 | 2014-04-21 | Hitachi High-Technologies Corp | Rate sensor, linear source and vapor deposition device |
| JP2014109047A (en) * | 2012-11-30 | 2014-06-12 | Panasonic Corp | Vacuum deposition equipment |
| US9506895B2 (en) * | 2013-05-17 | 2016-11-29 | Inficon, Inc. | Combined crystal retainer and contact system for deposition monitor sensors |
-
2015
- 2015-06-17 JP JP2017563281A patent/JP6640879B2/en not_active Expired - Fee Related
- 2015-06-17 WO PCT/EP2015/063637 patent/WO2016202388A1/en active Application Filing
- 2015-06-17 KR KR1020177037768A patent/KR102082193B1/en active IP Right Grant
- 2015-06-17 CN CN201580080972.9A patent/CN107810410A/en active Pending
-
2016
- 2016-06-16 TW TW105118926A patent/TW201710535A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180014084A (en) | 2018-02-07 |
| JP6640879B2 (en) | 2020-02-05 |
| WO2016202388A1 (en) | 2016-12-22 |
| KR102082193B1 (en) | 2020-02-27 |
| CN107810410A (en) | 2018-03-16 |
| JP2018519423A (en) | 2018-07-19 |
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