TW201704979A - Touch panel - Google Patents
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- TW201704979A TW201704979A TW104124770A TW104124770A TW201704979A TW 201704979 A TW201704979 A TW 201704979A TW 104124770 A TW104124770 A TW 104124770A TW 104124770 A TW104124770 A TW 104124770A TW 201704979 A TW201704979 A TW 201704979A
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Abstract
Description
本發明是有關於一種面板,且特別是有關於一種觸控面板。 The present invention relates to a panel, and more particularly to a touch panel.
觸控面板通常包括基板以及交錯設置於基板上的多個電極串。電極串的材質通常選用光穿透率佳的透明導電材質,以提升觸控面板的光穿透率。由於單層電極串所在區域以及電極串交錯處之間的反射率差異甚大,因此使用者在使用觸控面板時容易看到電極串在交錯處的橋接痕跡,而影響了觸控面板的視覺效果。現有技術雖有針對上述問題提出改良,然而,此些改良尚無法有效地提升觸控面板的視覺效果。 The touch panel generally includes a substrate and a plurality of electrode strings staggered on the substrate. The material of the electrode string is usually made of a transparent conductive material with good light transmittance to improve the light transmittance of the touch panel. Since the reflectance between the area where the single-layer electrode string is located and the intersection of the electrode strings are very different, the user can easily see the bridging traces of the electrode strings at the staggered position when using the touch panel, thereby affecting the visual effect of the touch panel. . Although the prior art has been proposed to improve the above problems, however, such improvements have not been able to effectively improve the visual effect of the touch panel.
本發明提供一種觸控面板,其具有良好的視覺效果。 The invention provides a touch panel with good visual effects.
本發明的一種觸控面板,其包括基板、多個第一電極串、多個第二電極串、多個絕緣圖案以及多個第一光學匹配圖案。基板具有多個架橋區以及連接架橋區的非架橋區。第一電極串以及 第二電極串設置在基板上且交錯於架橋區中。絕緣圖案位於架橋區中,且各絕緣圖案分別位於其中一第一電極串與對應的第二電極串之間。各第一光學匹配圖案分別位於其中一架橋區中且位於對應的第一電極串與對應的第二電極串之間。各絕緣圖案分別設置在其中一第一光學匹配圖案遠離基板的表面上。 A touch panel of the present invention includes a substrate, a plurality of first electrode strings, a plurality of second electrode strings, a plurality of insulating patterns, and a plurality of first optical matching patterns. The substrate has a plurality of bridging regions and a non-bridging region connecting the bridging regions. First electrode string and The second electrode string is disposed on the substrate and staggered in the bridging region. The insulating pattern is located in the bridging region, and each of the insulating patterns is respectively located between one of the first electrode strings and the corresponding second electrode string. Each of the first optical matching patterns is located in one of the bridge regions and is located between the corresponding first electrode string and the corresponding second electrode string. Each of the insulating patterns is disposed on a surface of one of the first optical matching patterns away from the substrate.
在本發明的一實施例中,上述的各第一電極串包括多個第一電極墊以及多個第一連接線。各第一連接線沿第一方向串接相鄰兩第一電極墊。各第二電極串包括多個第二電極墊以及多個第二連接線。各第二連接線沿第二方向串接相鄰兩第二電極墊。各第二連接線與對應的第一連接線交錯於其中一架橋區中。各絕緣圖案與對應的第一光學匹配圖案分別位於其中一第一連接線與對應的第二連接線之間。 In an embodiment of the invention, each of the first electrode strings includes a plurality of first electrode pads and a plurality of first connection lines. Each of the first connecting lines is connected in series with the adjacent two first electrode pads in the first direction. Each of the second electrode strings includes a plurality of second electrode pads and a plurality of second connection lines. Each of the second connecting lines is connected in series with the adjacent two second electrode pads in the second direction. Each of the second connecting lines and the corresponding first connecting line are interleaved in one of the bridge regions. Each of the insulation patterns and the corresponding first optical matching pattern are respectively located between one of the first connection lines and the corresponding second connection line.
在本發明的一實施例中,上述的第二連接線、第一光學匹配圖案、絕緣圖案以及第一連接線依序堆疊在基板上,且第一電極墊、第二電極墊以及第一連接線屬於同一層。 In an embodiment of the invention, the second connecting line, the first optical matching pattern, the insulating pattern, and the first connecting line are sequentially stacked on the substrate, and the first electrode pad, the second electrode pad, and the first connection Lines belong to the same layer.
在本發明的一實施例中,上述的各第一光學匹配圖案在第二方向上的寬度大於各第一連接線在第二方向上的寬度且小於各第二連接線的長度。 In an embodiment of the invention, the width of each of the first optical matching patterns in the second direction is greater than the width of each of the first connecting lines in the second direction and smaller than the length of each of the second connecting lines.
在本發明的一實施例中,上述的各絕緣圖案的厚度大於1微米且小於或等於5微米。 In an embodiment of the invention, each of the insulating patterns has a thickness greater than 1 micrometer and less than or equal to 5 micrometers.
在本發明的一實施例中,上述的第一光學匹配圖案以及絕緣圖案的形狀相同。 In an embodiment of the invention, the first optical matching pattern and the insulating pattern have the same shape.
在本發明的一實施例中,上述的各第一光學匹配圖案的形狀不同於各第一電極串或各第二電極串的形狀。 In an embodiment of the invention, the shape of each of the first optical matching patterns is different from the shape of each of the first electrode strings or the second electrode strings.
在本發明的一實施例中,上述的各第一光學匹配圖案為單層結構。各第一光學匹配圖案的折射率落在1.55至1.8的範圍內,且各第一光學匹配圖案的厚度落在10埃至2000埃的範圍內。 In an embodiment of the invention, each of the first optical matching patterns is a single layer structure. The refractive index of each of the first optical matching patterns falls within the range of 1.55 to 1.8, and the thickness of each of the first optical matching patterns falls within the range of 10 angstroms to 2000 angstroms.
在本發明的一實施例中,上述的各第一光學匹配圖案包括至少一第一子層以及至少一第二子層。所述至少一第一子層以及所述至少一第二子層交替堆疊在基板與對應的絕緣圖案之間。各第一子層的折射率低於各第二子層的折射率,且各第一子層以及各第二子層的厚度分別落在10埃至2000埃的範圍內。 In an embodiment of the invention, each of the first optical matching patterns includes at least a first sub-layer and at least a second sub-layer. The at least one first sub-layer and the at least one second sub-layer are alternately stacked between the substrate and the corresponding insulating pattern. The refractive index of each of the first sub-layers is lower than the refractive index of each of the second sub-layers, and the thickness of each of the first sub-layers and each of the second sub-layers falls within a range of 10 angstroms to 2000 angstroms, respectively.
在本發明的一實施例中,上述的各第一子層的折射率落在1.4至1.8的範圍內,且各第二子層的折射率落在1.8至3的範圍內。 In an embodiment of the invention, the refractive index of each of the first sub-layers falls within a range of 1.4 to 1.8, and the refractive index of each of the second sub-layers falls within a range of 1.8 to 3.
在本發明的一實施例中,上述的觸控面板更包括第二光學匹配層。第二光學匹配層設置在基板上且位於架橋區以及非架橋區中,且第二光學匹配層位於第一電極串與基板之間以及第二電極串與基板之間。 In an embodiment of the invention, the touch panel further includes a second optical matching layer. The second optical matching layer is disposed on the substrate and located in the bridging region and the non-bridging region, and the second optical matching layer is located between the first electrode string and the substrate and between the second electrode string and the substrate.
在本發明的一實施例中,上述的觸控面板更包括第三光學匹配層。第三光學匹配層位於架橋區以及非架橋區中且設置在第一電極串以及第二電極串上,其中第三光學匹配層在各架橋區中的厚度為A,第三光學匹配層在非架橋區的厚度為B,且(B-A)≦0.1B。 In an embodiment of the invention, the touch panel further includes a third optical matching layer. The third optical matching layer is located in the bridging region and the non-bridging region and is disposed on the first electrode string and the second electrode string, wherein the third optical matching layer has a thickness A in each bridging region, and the third optical matching layer is in the The bridging zone has a thickness of B and (BA) ≦ 0.1B.
在本發明的一實施例中,上述的第三光學匹配層為折射率落在1.6至1.7的範圍內的有機材料層。 In an embodiment of the invention, the third optical matching layer is an organic material layer having a refractive index falling within a range of 1.6 to 1.7.
在本發明的一實施例中,上述的第三光學匹配層在非架橋區與架橋區的交界的厚度為C,且C大於A與B。 In an embodiment of the invention, the thickness of the third optical matching layer at the boundary between the non-bridge region and the bridging region is C, and C is greater than A and B.
在本發明的一實施例中,。 In an embodiment of the invention, .
基於上述,由於設置在架橋區的第一光學匹配圖案有助於補償單層電極串所在區域(非架橋區)以及電極串交錯處(架橋區A1)之間的反射率差異,因此本發明的觸控面板可具有良好的視覺效果。 Based on the above, since the first optical matching pattern disposed in the bridging area helps to compensate for the difference in reflectance between the region where the single-layer electrode string is located (the non-bridge region) and the intersection of the electrode strings (the bridging region A1), the present invention The touch panel can have a good visual effect.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.
100、100A、100B、100C、100D、100E‧‧‧觸控面板 100, 100A, 100B, 100C, 100D, 100E‧‧‧ touch panels
110‧‧‧基板 110‧‧‧Substrate
120‧‧‧第一電極串 120‧‧‧First electrode string
122‧‧‧第一電極墊 122‧‧‧First electrode pad
124‧‧‧第一連接線 124‧‧‧First cable
130‧‧‧第二電極串 130‧‧‧Second electrode string
132‧‧‧第二電極墊 132‧‧‧Second electrode pad
134‧‧‧第二連接線 134‧‧‧second cable
140‧‧‧絕緣圖案 140‧‧‧Insulation pattern
150、150A、150B‧‧‧第一光學匹配圖案 150, 150A, 150B‧‧‧ first optical matching pattern
152‧‧‧第一子層 152‧‧‧ first sub-layer
154‧‧‧第二子層 154‧‧‧ second sub-layer
160‧‧‧第二光學匹配層 160‧‧‧Second optical matching layer
170‧‧‧第三光學匹配層 170‧‧‧ third optical matching layer
A、B、C、H140、H150、H152、H154‧‧‧厚度 A, B, C, H140, H150, H152, H154‧‧ thickness
A1‧‧‧架橋區 A1‧‧‧Bridge area
A2‧‧‧非架橋區 A2‧‧‧Bridgeless area
A3‧‧‧周邊區 A3‧‧‧ surrounding area
A31‧‧‧接合區 A31‧‧‧ junction area
BM‧‧‧裝飾層 BM‧‧‧decorative layer
D1‧‧‧第一方向 D1‧‧‧ first direction
D2‧‧‧第二方向 D2‧‧‧ second direction
G‧‧‧間隙 G‧‧‧ gap
IF‧‧‧交界 IF‧‧‧ junction
L134‧‧‧長度 L134‧‧‧ length
S1‧‧‧內表面 S1‧‧‧ inner surface
S2‧‧‧外表面 S2‧‧‧ outer surface
SI‧‧‧內緣 SI‧‧‧ inner edge
T124、T132、T170‧‧‧頂面 Top surface of T124, T132, T170‧‧
W‧‧‧導線 W‧‧‧ wire
W124、W150‧‧‧寬度 W124, W150‧‧‧ width
X‧‧‧位置 X‧‧‧ position
I-I’‧‧‧剖線 I-I’‧‧‧ cut line
圖1A是依照本發明的一實施例的觸控面板的上視示意圖。 FIG. 1A is a top plan view of a touch panel according to an embodiment of the invention.
圖1B是圖1A中剖線I-I’的第一種剖面示意圖。 Fig. 1B is a first schematic cross-sectional view taken along line I-I' of Fig. 1A.
圖2至圖6分別是圖1A中剖線I-I’的第二種至第六種剖面示意圖。 2 to 6 are schematic cross-sectional views showing a second to sixth cross-sectional line I-I' of Fig. 1A, respectively.
圖1A是依照本發明的一實施例的觸控面板的上視示意圖。圖1B是圖1A中剖線I-I’的第一種剖面示意圖。請參照圖1A 及圖1B,觸控面板100包括基板110、多個第一電極串120、多個第二電極串130、多個絕緣圖案140以及多個第一光學匹配圖案150。 FIG. 1A is a top plan view of a touch panel according to an embodiment of the invention. Fig. 1B is a first schematic cross-sectional view taken along line I-I' of Fig. 1A. Please refer to Figure 1A 1B , the touch panel 100 includes a substrate 110 , a plurality of first electrode strings 120 , a plurality of second electrode strings 130 , a plurality of insulating patterns 140 , and a plurality of first optical matching patterns 150 .
基板110適於承載第一電極串120、第二電極串130、絕緣圖案140以及第一光學匹配圖案150。在本實施例中,基板110例如作為蓋板用,其中第一電極串120、第二電極串130、絕緣圖案140以及第一光學匹配圖案150設置在基板110的內表面S1,且基板110的外表面S2為觸控操作面。亦即,觸控物(如手指或觸控筆)碰觸外表面S2或於外表面S2的上方執行懸浮操作。 The substrate 110 is adapted to carry the first electrode string 120, the second electrode string 130, the insulation pattern 140, and the first optical matching pattern 150. In this embodiment, the substrate 110 is used as a cover plate, for example, wherein the first electrode string 120, the second electrode string 130, the insulation pattern 140, and the first optical matching pattern 150 are disposed on the inner surface S1 of the substrate 110, and the substrate 110 The outer surface S2 is a touch operation surface. That is, a touch object such as a finger or a stylus touches the outer surface S2 or performs a floating operation above the outer surface S2.
基板110可以是具有高機械強度以保護(例如防刮)所覆蓋的元件的硬性基板。當觸控面板100有與顯示面板結合使用的需求時,基板110的材質為透明材質,以避免基板110遮蔽來自顯示面板的顯示光束。所述透明材質泛指一般具備高穿透率的材質,而不用以限定穿透率為100%的材質。舉例而言,基板110可以是透光的強化玻璃基板,但不以此為限。 The substrate 110 may be a rigid substrate having high mechanical strength to protect (eg, scratch resistant) the covered components. When the touch panel 100 has a requirement for use in combination with the display panel, the material of the substrate 110 is a transparent material to prevent the substrate 110 from shielding the display beam from the display panel. The transparent material generally refers to a material having a high transmittance, and is not used to define a material having a transmittance of 100%. For example, the substrate 110 may be a light-transmitting tempered glass substrate, but is not limited thereto.
基板110具有多個架橋區A1以及連接架橋區A1的非架橋區A2。第一電極串120以及第二電極串130設置在基板110上且交錯於架橋區A1中。進一步而言,架橋區A11與非架橋區A2的邊界例如由第一電極串120以及第二電極串130因交錯而***的位置X(如圖1B所示)界定而成。 The substrate 110 has a plurality of bridging regions A1 and a non-bridge region A2 connecting the bridging regions A1. The first electrode string 120 and the second electrode string 130 are disposed on the substrate 110 and are staggered in the bridging area A1. Further, the boundary between the bridging area A11 and the non-bridged area A2 is defined, for example, by the position X (shown in FIG. 1B) in which the first electrode string 120 and the second electrode string 130 are entangled by staggering.
在本實施例中,基板110可進一步具有環繞非架橋區A2的周邊區A3,以配置傳遞訊號的多條導線W及其他未繪示的線 路。各導線W分別與其中一第一電極串120或其中一第二電極串130電性連接,且導線W集中延伸至周邊區A3的接合區A31中,以與訊號傳遞線路(未繪示)或晶片(未繪示)接合。為避免導線W及線路顯露於外而影響觸控面板100的視覺效果,觸控面板100可進一步設置裝飾層BM,以遮蔽導線W及線路。如圖1A所示,裝飾層BM覆蓋周邊區A3且暴露架橋區A1以及非架橋區A2,其中周邊區A3以及非架橋區A2的邊界即由裝飾層BM的內緣SI界定而成。 In this embodiment, the substrate 110 may further have a peripheral area A3 surrounding the non-bridge region A2 to configure a plurality of wires W for transmitting signals and other lines not shown. road. Each of the wires W is electrically connected to one of the first electrode strings 120 or one of the second electrode strings 130, and the wires W are concentratedly extended into the junction area A31 of the peripheral area A3 to be connected to a signal transmission line (not shown) or Wafers (not shown) are bonded. In order to prevent the wires W and the lines from being exposed to affect the visual effect of the touch panel 100, the touch panel 100 may further be provided with a decorative layer BM to shield the wires and the wires. As shown in FIG. 1A, the decorative layer BM covers the peripheral area A3 and exposes the bridging area A1 and the non-bridging area A2, wherein the boundary of the peripheral area A3 and the non-bridged area A2 is defined by the inner edge SI of the decorative layer BM.
各第一電極串120包括多個第一電極墊122以及多個第一連接線124。各第一連接線124沿第一方向D1串接相鄰兩第一電極墊122。各第二電極串130包括多個第二電極墊132以及多個第二連接線134。各第二連接線134沿第二方向D2串接相鄰兩第二電極墊132,且各第二連接線134與對應的第一連接線124交錯於其中一架橋區A1中。第二方向D2與第一方向D1彼此相交且例如是彼此垂直。應說明的是,圖1A僅示意性繪示出電極串(包括第一電極串120以及第二電極串130)的其中一種圖案設計,但本發明不限於此。 Each of the first electrode strings 120 includes a plurality of first electrode pads 122 and a plurality of first connection lines 124. Each of the first connecting lines 124 is connected in series with the adjacent two first electrode pads 122 in the first direction D1. Each of the second electrode strings 130 includes a plurality of second electrode pads 132 and a plurality of second connection lines 134. Each of the second connecting lines 134 is connected in series with the adjacent two second electrode pads 132 in the second direction D2, and each of the second connecting lines 134 and the corresponding first connecting lines 124 are staggered in one of the bridge regions A1. The second direction D2 and the first direction D1 intersect each other and are, for example, perpendicular to each other. It should be noted that FIG. 1A schematically illustrates only one of the pattern designs of the electrode strings (including the first electrode string 120 and the second electrode string 130), but the invention is not limited thereto.
第一電極串120以及第二電極串130可採用透明導電材質,如金屬氧化物,但不以此為限。所述金屬氧化物例如包括銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物或銦鍺鋅氧化物等。 The first electrode string 120 and the second electrode string 130 may be made of a transparent conductive material, such as a metal oxide, but not limited thereto. The metal oxide includes, for example, indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide or indium antimony zinc oxide.
絕緣圖案140位於架橋區A1中,且各絕緣圖案140分別 位於其中一第一電極串120與對應的第二電極串130之間。如圖1B所示。各絕緣圖案140分別位於第一電極串120與第二電極串130的交錯處,且位於其中一第一連接線124與對應的第二連接線134之間,以使第一連接線124與第二連接線134結構上分離。如此,可避免第一連接線124與第二連接線134因相互接觸而短路。各絕緣圖案140的厚度H140例如大於1微米且小於或等於5微米。 The insulation pattern 140 is located in the bridging area A1, and each of the insulation patterns 140 is respectively Located between one of the first electrode strings 120 and the corresponding second electrode string 130. As shown in Figure 1B. Each of the insulating patterns 140 is located at an intersection of the first electrode string 120 and the second electrode string 130, and is located between one of the first connecting lines 124 and the corresponding second connecting line 134, so that the first connecting line 124 and the first connecting line 124 The two connecting wires 134 are structurally separated. In this way, the first connection line 124 and the second connection line 134 can be prevented from being short-circuited by mutual contact. The thickness H140 of each of the insulating patterns 140 is, for example, greater than 1 micrometer and less than or equal to 5 micrometers.
各第一光學匹配圖案150分別位於其中一架橋區A1中且位於對應的第一電極串120與對應的第二電極串130之間。如圖1B所示。各第一光學匹配圖案150分別位於第一電極串120與第二電極串130的交錯處,且位於其中一第一連接線124與對應的第二連接線134之間。各絕緣圖案140分別設置在其中一第一光學匹配圖案150遠離基板110的表面上。亦即,第一光學匹配圖案150比絕緣圖案140更靠近觸控操作面(即外表面S2)。 Each of the first optical matching patterns 150 is located in one of the bridge regions A1 and between the corresponding first electrode string 120 and the corresponding second electrode string 130. As shown in Figure 1B. Each of the first optical matching patterns 150 is located at an intersection of the first electrode string 120 and the second electrode string 130, and is located between one of the first connecting lines 124 and the corresponding second connecting line 134. Each of the insulating patterns 140 is disposed on a surface of the first optical matching pattern 150 away from the substrate 110. That is, the first optical matching pattern 150 is closer to the touch operation surface (ie, the outer surface S2) than the insulation pattern 140.
在本實施例中,第二連接線134、第一光學匹配圖案150、絕緣圖案140以及第一連接線124可依序堆疊在基板110上,且第一電極墊122(繪示於圖1A)、第二電極墊132以及第一連接線124屬於同一層。亦即,第一電極墊122、第二電極墊132以及第一連接線124由同一道製程製作而成。然而,上述膜層的堆疊順序不以此為限。在另一實施例中,第一連接線124、第一光學匹配圖案150、絕緣圖案140以及第二連接線134可依序堆疊在基板110上,且第一電極墊122、第二電極墊132以及第一連接線124屬於同一層。換句話說,第一電極墊122、第二電極墊132以及第 一連接線124可先形成於基板110上,再依續形成第一光學匹配圖案150、絕緣圖案140以及第二連接線134。 In this embodiment, the second connecting line 134, the first optical matching pattern 150, the insulating pattern 140, and the first connecting line 124 may be sequentially stacked on the substrate 110, and the first electrode pad 122 (shown in FIG. 1A) The second electrode pad 132 and the first connection line 124 belong to the same layer. That is, the first electrode pad 122, the second electrode pad 132, and the first connection line 124 are fabricated by the same process. However, the stacking order of the above film layers is not limited thereto. In another embodiment, the first connection line 124, the first optical matching pattern 150, the insulation pattern 140, and the second connection line 134 may be sequentially stacked on the substrate 110, and the first electrode pad 122 and the second electrode pad 132. And the first connection line 124 belongs to the same layer. In other words, the first electrode pad 122, the second electrode pad 132, and the A connecting line 124 can be formed on the substrate 110 first, and then the first optical matching pattern 150, the insulating pattern 140, and the second connecting line 134 are formed.
如圖1B所示,各第一光學匹配圖案150可為單層結構。藉由調變第一光學匹配圖案150的厚度H150,並使第一光學匹配圖案150的折射率介於電極串(包括第一電極串120以及第二電極串130)與絕緣圖案140之間,可利用光的破壞性干涉來有效降低第一光學匹配圖案150所在區域的反射率。在本實施例中,各第一光學匹配圖案150的厚度H150可落在10埃至2000埃的範圍內,而折射率可落在1.55至1.8的範圍內。第一光學匹配圖案150的製造方法可以是黃光製程,或是在鍍膜製程後藉由乾式蝕刻或濕式蝕刻來圖案化形成第一光學匹配圖案150。然而,第一光學匹配圖案150的材質及其製造方法不限於上述。 As shown in FIG. 1B, each of the first optical matching patterns 150 may have a single layer structure. By modulating the thickness H150 of the first optical matching pattern 150 and causing the refractive index of the first optical matching pattern 150 to be between the electrode strings (including the first electrode string 120 and the second electrode string 130) and the insulating pattern 140, Destructive interference of light can be utilized to effectively reduce the reflectivity of the region in which the first optical matching pattern 150 is located. In the present embodiment, the thickness H150 of each of the first optical matching patterns 150 may fall within the range of 10 angstroms to 2000 angstroms, and the refractive index may fall within the range of 1.55 to 1.8 angstroms. The manufacturing method of the first optical matching pattern 150 may be a yellow light process, or the first optical matching pattern 150 may be patterned by dry etching or wet etching after the coating process. However, the material of the first optical matching pattern 150 and the method of manufacturing the same are not limited to the above.
為能夠區域性調整觸控面板100的反射率,本實施例的第一光學匹配圖案150僅設置在架橋區A1中,而未覆蓋非架橋區A2。如此,可藉由調變第一光學匹配圖案150的折射率以及厚度H150,來補償單層電極串所在區域(即非架橋區A2)以及電極串交錯處(即架橋區A1)之間的反射率差異,使架橋區A1的反射率與非架橋區A2的反射率趨近一致,從而改善架橋區A1中橋接痕跡的明顯度,使觸控面板100具有良好的視覺效果。 In order to adjust the reflectivity of the touch panel 100 in a regional manner, the first optical matching pattern 150 of the present embodiment is disposed only in the bridging area A1 without covering the non-bridged area A2. Thus, the reflection between the region where the single-layer electrode string is located (ie, the non-bridge region A2) and the intersection of the electrode strings (ie, the bridge region A1) can be compensated by modulating the refractive index of the first optical matching pattern 150 and the thickness H150. The difference in rate makes the reflectivity of the bridging area A1 and the reflectivity of the non-bridged area A2 close, thereby improving the visibility of the bridging marks in the bridging area A1, and the touch panel 100 has a good visual effect.
如圖1A所示,第一光學匹配圖案150以及絕緣圖案140呈1對1的設置關係,其中各第一光學匹配圖案150在第二方向D2上的寬度W150大於各第一連接線124在第二方向D2上的寬 度W124且小於各第二連接線134的長度L134。第一光學匹配圖案150的形狀可相同於絕緣圖案140的形狀,且第一光學匹配圖案150的形狀不同於各第一電極串120或各第二電極串130的形狀。舉例而言,第一光學匹配圖案150以及絕緣圖案140於基板110上的正投影可皆為矩形,而第一光學匹配圖案150的尺寸可略大於絕緣圖案140的尺寸,但不以此為限。在其他實施例中,第一光學匹配圖案150的尺寸也可等於或略小於絕緣圖案140的尺寸。 As shown in FIG. 1A, the first optical matching pattern 150 and the insulating pattern 140 have a one-to-one arrangement relationship, wherein the width W150 of each first optical matching pattern 150 in the second direction D2 is greater than each of the first connecting lines 124. Width in the second direction D2 The degree W124 is smaller than the length L134 of each of the second connection lines 134. The shape of the first optical matching pattern 150 may be the same as the shape of the insulating pattern 140, and the shape of the first optical matching pattern 150 is different from the shape of each of the first electrode strings 120 or the respective second electrode strings 130. For example, the front projections of the first optical matching pattern 150 and the insulating pattern 140 on the substrate 110 may be rectangular, and the size of the first optical matching pattern 150 may be slightly larger than the size of the insulating pattern 140, but not limited thereto. . In other embodiments, the size of the first optical matching pattern 150 may also be equal to or slightly smaller than the size of the insulating pattern 140.
圖2至圖6分別是圖1A中剖線I-I’的第二種至第六種剖面示意圖。請參照圖2,觸控面板100A與圖1B的觸控面板100相似,且相似或相同的元件以相同的標號表示,於此不再贅述。觸控面板100A與觸控面板100的主要差異在於,各第一光學匹配圖案150A包括至少一第一子層152以及至少一第二子層154。在本實施例中,第一子層152以及第二子層154的數量分別為1,且第一子層152以及第二子層154依序堆疊在基板110與對應的絕緣圖案140之間,且位於絕緣圖案140與第二連接線134之間。 2 to 6 are schematic cross-sectional views showing a second to sixth cross-sectional line I-I' of Fig. 1A, respectively. Referring to FIG. 2, the touch panel 100A is similar to the touch panel 100 of FIG. 1B, and similar or identical elements are denoted by the same reference numerals and will not be described again. The main difference between the touch panel 100A and the touch panel 100 is that each of the first optical matching patterns 150A includes at least one first sub-layer 152 and at least one second sub-layer 154. In this embodiment, the number of the first sub-layer 152 and the second sub-layer 154 are respectively 1, and the first sub-layer 152 and the second sub-layer 154 are sequentially stacked between the substrate 110 and the corresponding insulating pattern 140. And located between the insulation pattern 140 and the second connection line 134.
藉由調變第一子層152以及第二子層154的厚度H152、H154,並利用高、低折射率堆疊的設計,可有效降低第一光學匹配圖案150A所在區域的反射率,使架橋區A1與非架橋區A2之間的反射率差異趨近於0。所述高、低折射率堆疊的設計例如是使第二連接線134的折射率大於第一子層152的折射率,而第一子層152的折射率低於第二子層154的折射率,且第二子層154的 折射率高於絕緣圖案140的折射率。舉例而言,第一子層152的折射率可落在1.4至1.8的範圍內,且第二子層154的折射率可落在1.8至3的範圍內。第一子層152的材質可包括二氧化矽(SiO2),而第二子層154的材質可包括五氧化二鈮(Nb2O5)、二氧化鈦(TiO2)、二氧化鋯(ZrO2)、氮化矽(SiNx)或氮氧化矽(SiOxNy),但不以此為限。此外,第一子層152以及第二子層154的厚度H152、H154可分別落在10埃至2000埃的範圍內。 By modulating the thicknesses H152, H154 of the first sub-layer 152 and the second sub-layer 154, and utilizing the design of the high and low refractive index stacks, the reflectivity of the region where the first optical matching pattern 150A is located can be effectively reduced, so that the bridging region is The difference in reflectance between A1 and the non-bridged area A2 approaches zero. The design of the high and low refractive index stack is, for example, such that the refractive index of the second connection line 134 is greater than the refractive index of the first sub-layer 152, and the refractive index of the first sub-layer 152 is lower than the refractive index of the second sub-layer 154. And the refractive index of the second sub-layer 154 is higher than the refractive index of the insulating pattern 140. For example, the refractive index of the first sub-layer 152 may fall within the range of 1.4 to 1.8, and the refractive index of the second sub-layer 154 may fall within the range of 1.8 to 3. The material of the first sub-layer 152 may include cerium oxide (SiO 2 ), and the material of the second sub-layer 154 may include niobium pentoxide (Nb 2 O 5 ), titanium dioxide (TiO 2 ), zirconium dioxide (ZrO 2 ) ), tantalum nitride (SiN x ) or bismuth oxynitride (SiO x N y ), but not limited thereto. Further, the thicknesses H152, H154 of the first sub-layer 152 and the second sub-layer 154 may fall within a range of 10 angstroms to 2000 angstroms, respectively.
請參照圖3,觸控面板100B與圖2的觸控面板100A相似,且相似或相同的元件以相同的標號表示,於此不再贅述。觸控面板100B與觸控面板100A的主要差異在於,第一光學匹配圖案150B的第一子層152以及第二子層154的數量分別大於1(例如分別為2),且第一子層152以及第二子層154交替堆疊在基板110與對應的絕緣圖案140之間,且位於絕緣圖案140與第二連接線134之間。第一子層152以及第二子層154的材質可參照前述,於此不再贅述。 Referring to FIG. 3, the touch panel 100B is similar to the touch panel 100A of FIG. 2, and similar or identical elements are denoted by the same reference numerals and will not be described again. The main difference between the touch panel 100B and the touch panel 100A is that the number of the first sub-layer 152 and the second sub-layer 154 of the first optical matching pattern 150B are greater than 1 (for example, 2, respectively), and the first sub-layer 152 And the second sub-layer 154 is alternately stacked between the substrate 110 and the corresponding insulating pattern 140 and between the insulating pattern 140 and the second connecting line 134. The materials of the first sub-layer 152 and the second sub-layer 154 can be referred to the foregoing, and details are not described herein again.
請參照圖4,觸控面板100C與圖1B的觸控面板100相似,且相似或相同的元件以相同的標號表示,於此不再贅述。觸控面板100C與觸控面板100的主要差異在於,觸控面板100C進一步包括第二光學匹配層160。第二光學匹配層160設置在基板110上且位於架橋區A1以及非架橋區A2中,且第二光學匹配層160位於第一電極串120與基板110之間以及第二電極串130與基板110之間。具體地,第二光學匹配層160可直接設置在基板110 的內表面S1上,而第一電極串120以及第二電極串130設置於第二光學匹配層160上。 Referring to FIG. 4, the touch panel 100C is similar to the touch panel 100 of FIG. 1B, and similar or identical elements are denoted by the same reference numerals and will not be described again. The main difference between the touch panel 100C and the touch panel 100 is that the touch panel 100C further includes a second optical matching layer 160. The second optical matching layer 160 is disposed on the substrate 110 and located in the bridging area A1 and the non-bridge area A2, and the second optical matching layer 160 is located between the first electrode string 120 and the substrate 110 and the second electrode string 130 and the substrate 110 between. Specifically, the second optical matching layer 160 can be directly disposed on the substrate 110 On the inner surface S1, the first electrode string 120 and the second electrode string 130 are disposed on the second optical matching layer 160.
第二光學匹配層160的折射率例如介於基板110的折射率與電極串(包括第一電極串120以及第二電極串130)的折射率之間,以補償電極串之間的間隙G與單層電極串所在區域(非架橋區A2中間隙G以外的區域)之間的反射率差異,從而改善習知圖案明顯度的問題。舉例而言,第二光學匹配層160的折射率可落在1.6至1.7的範圍內。 The refractive index of the second optical matching layer 160 is, for example, between the refractive index of the substrate 110 and the refractive index of the electrode string (including the first electrode string 120 and the second electrode string 130) to compensate for the gap G between the electrode strings and The difference in reflectance between the region where the single-layer electrode string is located (the region other than the gap G in the non-bridge region A2), thereby improving the problem of the apparent pattern visibility. For example, the refractive index of the second optical matching layer 160 may fall within the range of 1.6 to 1.7.
第二光學匹配層160可為單層結構或多層結構。具體地,第二光學匹配層160可包括至少一有機材料層、至少一無機材料層或上述兩者的疊層。當第二光學匹配層160為多個子層的堆疊層時,其各子層的折射率由基板110至第二連接線134的順序可採用上述高-低或高-低-高-低的設計,其中最靠近內表面S1上的子層採用高折射率的材質,而最靠近第二連接線134的子層採用低折射率的材質。如此,第二光學匹配層160與位於其上的第二連接線134、第一光學匹配圖案150以及絕緣圖案140之間仍可具有上述高、低折射率堆疊的設計。 The second optical matching layer 160 may be a single layer structure or a multilayer structure. Specifically, the second optical matching layer 160 may include at least one organic material layer, at least one inorganic material layer, or a laminate of the two. When the second optical matching layer 160 is a stacked layer of a plurality of sub-layers, the order of the refractive index of each sub-layer from the substrate 110 to the second connecting line 134 may adopt the above-mentioned high-low or high-low-high-low design. The sub-layer closest to the inner surface S1 is made of a material having a high refractive index, and the sub-layer closest to the second connecting line 134 is made of a material having a low refractive index. As such, the second optical matching layer 160 may still have the above-described design of the high and low refractive index stacks between the second connection lines 134, the first optical matching patterns 150, and the insulating patterns 140 located thereon.
另外,第二光學匹配層160可選擇性地延伸至周邊區A3,且位於裝飾層BM與導線W之間,但不以此為限。應說明的是,延伸至周邊區A3的第二光學匹配層160需暴露位於周邊區A3中的接合區A31(繪示於圖1A),以利接合區A31中的導線W與訊號傳遞線路(未繪示)或晶片(未繪示)接合。 In addition, the second optical matching layer 160 may selectively extend to the peripheral area A3 and be located between the decorative layer BM and the wire W, but is not limited thereto. It should be noted that the second optical matching layer 160 extending to the peripheral area A3 needs to expose the bonding area A31 (shown in FIG. 1A) located in the peripheral area A3 to facilitate the wire W and the signal transmission line in the bonding area A31 ( Not shown) or wafer (not shown) bonded.
請參照圖5,觸控面板100D與圖1B的觸控面板100相似,且相似或相同的元件以相同的標號表示,於此不再贅述。觸控面板100D與圖1B的觸控面板100的主要差異在於,觸控面板100D進一步包括第三光學匹配層170。第三光學匹配層170位於架橋區A1以及非架橋區A2中且設置在第一電極串120以及第二電極串130上。 Referring to FIG. 5, the touch panel 100D is similar to the touch panel 100 of FIG. 1B, and similar or identical elements are denoted by the same reference numerals and will not be described again. The main difference between the touch panel 100D and the touch panel 100 of FIG. 1B is that the touch panel 100D further includes a third optical matching layer 170. The third optical matching layer 170 is located in the bridging area A1 and the non-bridge area A2 and is disposed on the first electrode string 120 and the second electrode string 130.
第三光學匹配層170的折射率可介於基板110的折射率與電極串(包括第一電極串120以及第二電極串130)的折射率之間,以補償電極串之間的間隙G與單層電極串所在區域(非架橋區A2中間隙G以外的區域)之間的反射率差異,從而改善習知圖案明顯度的問題。舉例而言,第三光學匹配層170的折射率落在1.6至1.7的範圍內。 The refractive index of the third optical matching layer 170 may be between the refractive index of the substrate 110 and the refractive index of the electrode string (including the first electrode string 120 and the second electrode string 130) to compensate for the gap G between the electrode strings and The difference in reflectance between the region where the single-layer electrode string is located (the region other than the gap G in the non-bridge region A2), thereby improving the problem of the apparent pattern visibility. For example, the refractive index of the third optical matching layer 170 falls within the range of 1.6 to 1.7.
此外,藉由使第三光學匹配層170在架橋區A1的厚度A與非架橋區A2的厚度B趨近一致,例如使(B-A)≦0.1B,可進一步補償單層電極串所在區域(非架橋區A2)與電極串交錯處(架橋區A1)之間的反射率差異,從而改善架橋區A1中橋接痕跡的明顯度,使觸控面板100D具有良好的視覺效果。上述厚度A定義為架橋區A1中第三光學匹配層170的頂面T170與第一連接線124的頂面T124的距離,而厚度B定義為非架橋區A2中第三光學匹配層170未因電極串交錯而***的頂面T170與第二電極墊132的頂面T132(或第一電極墊122的頂面)的距離。 In addition, by making the thickness A of the third optical matching layer 170 in the bridging area A1 and the thickness B of the non-bridged area A2 close, for example, (BA) ≦ 0.1B, the area where the single-layer electrode string is located can be further compensated (non- The difference in reflectivity between the bridging area A2) and the electrode string intersection (bridge area A1) improves the visibility of the bridging traces in the bridging area A1, so that the touch panel 100D has a good visual effect. The thickness A is defined as the distance between the top surface T170 of the third optical matching layer 170 in the bridging area A1 and the top surface T124 of the first connecting line 124, and the thickness B is defined as the third optical matching layer 170 in the non-bridged area A2. The distance between the top surface T170 of the electrode strings staggered and raised and the top surface T132 of the second electrode pad 132 (or the top surface of the first electrode pad 122).
由於架橋區A1的膜層厚度大於非架橋區A2的膜層厚 度,因此當第三光學匹配層170由液態材料(如液態的有機材料)固化形成時,液態材料在固化前容易由架橋區A1往非架橋區A2流動,使得第三光學匹配層170在非架橋區A2的厚度B容易大於第三光學匹配層170在架橋區A1的厚度A,且第三光學匹配層170在非架橋區A2與架橋區A1的交界IF的厚度C會大於厚度A與厚度B。在本實施例中,。上述交界IF定義為第三光學匹配層170在非架橋區A2與架橋區A1之間因下層膜厚斷差所造成的傾斜處。 Since the film thickness of the bridging area A1 is greater than the film thickness of the non-bridge area A2, when the third optical matching layer 170 is formed by solidification of a liquid material (such as a liquid organic material), the liquid material is easily bridged by the A1 before curing. Flowing toward the non-bridge region A2, such that the thickness B of the third optical matching layer 170 in the non-bridge region A2 is easily greater than the thickness A of the third optical matching layer 170 at the bridging region A1, and the third optical matching layer 170 is in the non-bridge region A2. The thickness C of the interface IF with the bridging area A1 will be greater than the thickness A and the thickness B. In this embodiment, . The above-described junction IF is defined as the inclination of the third optical matching layer 170 between the non-bridge region A2 and the bridging region A1 due to the underlying film thickness deviation.
為使第三光學匹配層170在架橋區A1的厚度A與非架橋區A2的厚度B趨近一致,本實施例可增加有機材料的黏度、降低有機材料的流平特性(leveling property)或降低有機材料的表面張力,來降低有機材料的灘流程度。舉例而言,可使有機材料的黏度大於5厘泊且不大於50厘泊,或使有機材料的表面張力小於各絕緣圖案140之材料的表面張力。或者,當第三光學匹配層170採用印刷的方式形成時,亦可藉由縮減印刷器具(如滾輪)與基板110之間的移動速率差異,來降低有機材料的灘流程度,從而實現(B-A)≦0.1B。 In order to make the thickness A of the third optical matching layer 170 in the bridging area A1 and the thickness B of the non-bridge bridging area A2, the embodiment can increase the viscosity of the organic material, reduce the leveling property of the organic material, or reduce The surface tension of organic materials to reduce the degree of beaching of organic materials. For example, the viscosity of the organic material may be greater than 5 centipoise and not greater than 50 centipoise, or the surface tension of the organic material may be less than the surface tension of the material of each of the insulating patterns 140. Alternatively, when the third optical matching layer 170 is formed by printing, the degree of movement of the organic material can be reduced by reducing the difference in the moving rate between the printing device (such as a roller) and the substrate 110, thereby achieving (BA) ) ≦ 0.1B.
請參照圖6,觸控面板100E與圖4的觸控面板100C相似,且相似或相同的元件以相同的標號表示,於此不再贅述。觸控面板100E與觸控面板100C的主要差異在於,觸控面板100E還包括第三光學匹配層170。第三光學匹配層170的材質、配置位 置及其功效可參照圖5中對應的描述,於此不再贅述。 Referring to FIG. 6 , the touch panel 100E is similar to the touch panel 100C of FIG. 4 , and similar or identical elements are denoted by the same reference numerals and will not be described again. The main difference between the touch panel 100E and the touch panel 100C is that the touch panel 100E further includes a third optical matching layer 170. Material and configuration bit of the third optical matching layer 170 For the function and the function, reference may be made to the corresponding description in FIG. 5, and details are not described herein again.
綜上所述,本發明在架橋區設置第一光學匹配圖案,以補償單層電極串所在區域(非架橋區)以及電極串交錯處(架橋區)之間的反射率差異,使觸控面板可具有良好的視覺效果。在一實施例中,還可進一步設置第二光學匹配層以及第三光學匹配層的其中至少一者,以補償電極串之間的間隙與單層電極串所在區域之間的反射率差異,從而改善習知圖案明顯度的問題,並使電極串之間的間隙的反射率、單層電極串所在區域的反射率以及電極串交錯處的反射率趨近一致,而使觸控面板具有理想的視覺效果。 In summary, the present invention sets a first optical matching pattern in the bridging area to compensate for the difference in reflectivity between the region where the single-layer electrode string is located (non-bridged region) and the staggered portion of the electrode string (bridge region), so that the touch panel Can have a good visual effect. In an embodiment, at least one of the second optical matching layer and the third optical matching layer may be further disposed to compensate for a difference in reflectance between a gap between the electrode strings and a region where the single-layer electrode string is located, thereby Improve the visibility of the conventional pattern, and make the reflectivity of the gap between the electrode strings, the reflectivity of the region where the single-layer electrode string is located, and the reflectivity at the intersection of the electrode strings become uniform, so that the touch panel has an ideal Visual effect.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
100‧‧‧觸控面板 100‧‧‧ touch panel
110‧‧‧基板 110‧‧‧Substrate
120‧‧‧第一電極串 120‧‧‧First electrode string
124‧‧‧第一連接線 124‧‧‧First cable
130‧‧‧第二電極串 130‧‧‧Second electrode string
132‧‧‧第二電極墊 132‧‧‧Second electrode pad
134‧‧‧第二連接線 134‧‧‧second cable
140‧‧‧絕緣圖案 140‧‧‧Insulation pattern
150‧‧‧第一光學匹配圖案 150‧‧‧First optical matching pattern
H140、H150‧‧‧厚度 H140, H150‧‧‧ thickness
A1‧‧‧架橋區 A1‧‧‧Bridge area
A2‧‧‧非架橋區 A2‧‧‧Bridgeless area
A3‧‧‧周邊區 A3‧‧‧ surrounding area
BM‧‧‧裝飾層 BM‧‧‧decorative layer
G‧‧‧間隙 G‧‧‧ gap
S1‧‧‧內表面 S1‧‧‧ inner surface
S2‧‧‧外表面 S2‧‧‧ outer surface
SI‧‧‧內緣 SI‧‧‧ inner edge
W‧‧‧導線 W‧‧‧ wire
X‧‧‧位置 X‧‧‧ position
Claims (15)
Priority Applications (3)
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TW104124770A TW201704979A (en) | 2015-07-30 | 2015-07-30 | Touch panel |
CN201510551170.3A CN106406593A (en) | 2015-07-30 | 2015-09-01 | Touch panel |
US14/857,838 US9547383B1 (en) | 2015-06-25 | 2015-09-18 | Touch panel |
Applications Claiming Priority (1)
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TW104124770A TW201704979A (en) | 2015-07-30 | 2015-07-30 | Touch panel |
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TW201704979A true TW201704979A (en) | 2017-02-01 |
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CN103430134B (en) * | 2011-01-19 | 2017-03-29 | Lg伊诺特有限公司 | Touch pad and its manufacture method |
TW201447662A (en) * | 2013-06-11 | 2014-12-16 | Wintek Corp | Touch panel |
TW201504875A (en) * | 2013-07-23 | 2015-02-01 | Wintek Corp | Touch panel |
CN104750293A (en) * | 2013-12-31 | 2015-07-01 | 胜华科技股份有限公司 | Touch panel with optical matching layer structure and forming method of optical matching layers |
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