TW201626590A - 差異化p型與n型架構之太陽能電池射極區域之製備與整合點擴散法 - Google Patents
差異化p型與n型架構之太陽能電池射極區域之製備與整合點擴散法 Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 70
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- 238000002955 isolation Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 14
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- 230000009467 reduction Effects 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 125000004429 atom Chemical group 0.000 description 2
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- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 2
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- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
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- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- IAOQICOCWPKKMH-UHFFFAOYSA-N dithieno[3,2-a:3',2'-d]thiophene Chemical compound C1=CSC2=C1C(C=CS1)=C1S2 IAOQICOCWPKKMH-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- TXFYZJQDQJUDED-UHFFFAOYSA-N germanium nickel Chemical compound [Ni].[Ge] TXFYZJQDQJUDED-UHFFFAOYSA-N 0.000 description 1
- MWRJCEDXZKNABM-UHFFFAOYSA-N germanium tungsten Chemical compound [Ge].[W] MWRJCEDXZKNABM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
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- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000003032 molecular docking Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- CXXKWLMXEDWEJW-UHFFFAOYSA-N tellanylidenecobalt Chemical compound [Te]=[Co] CXXKWLMXEDWEJW-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
描述以差異化P型與N型架構及整合點擴散法來製備太陽能電池的射極區域的方法、及其所得之太陽能電池。在一實例中,太陽能電池包含具有光接收表面及背面的基板。第一導電型的第一多晶矽射極區域設置在於基板的背面上所設置的第一薄介電層上。相異之第二導電型的第二多晶矽射極區域設置在於基板的背面中複數個非連續溝槽中所設置的第二薄介電層上。
Description
本發明之實施例係有關再生能源領域,特別是以差異化P型與N型架構及整合點擴散法來製備太陽能電池的射極區域的方法、及其所得之太陽能電池。
俗稱為太陽能電池之光伏打電池,為用以將太陽輻射直接轉換為電能之眾所周知的裝置。一般而言,太陽能電池是用半導體製程技術來形成接近於基板表面的p-n接面,以製造於半導體晶片或基板上。衝射基板表面並進入基板之太陽輻射在塊狀基板中產生電子及電洞對。電子及電洞對移動至基板中之p-摻雜及n-摻雜區域,從而於摻雜區域間產生電壓差。摻雜區域被連接至太陽能電池上之導電區域以將來自電池之電流引導至與其耦接之外部電路。
效率是太陽能電池的重要特性,因為其與太陽能電池產生電力之能力直接相關。同樣的,生產太陽能電池的效率與此種太陽能電池的成本效益
直接相關。據此,普遍期望用於增加太陽能電池之效率的技術或用於增加太陽能電池生產效率的技術。本發明的一些實施例允許藉由提供製造太陽能電池結構之新穎的製程來增加太陽能電池的生產效率。本揭露的一些實施例允許藉由提供新穎的太陽能電池結構來增加太陽能電池效率。
101‧‧‧光接收表面
102‧‧‧基板
104‧‧‧第一薄介電層
106‧‧‧第一矽層
108‧‧‧絕緣層
109‧‧‧溝槽
110‧‧‧第一矽區域
111‧‧‧深度
112‧‧‧絕緣罩
114‧‧‧凹槽
116‧‧‧紋理化表面
118‧‧‧第二薄介電層
120、120’‧‧‧第二矽層
122‧‧‧第三薄介電層
122’‧‧‧薄介電層
124‧‧‧第二矽區域
125‧‧‧多晶矽區域
126‧‧‧接觸開口
128‧‧‧金屬晶種層
132、134、832、834‧‧‧導電接觸
700、900‧‧‧流程圖
702、704、706、708、710、712、714、902、904、906、908‧‧‧操作
828‧‧‧金屬矽化物層
130、830‧‧‧金屬層
第1圖至第6圖根據本發明之實施例,描繪太陽能電池的製備中各階段的剖面圖及平面圖,其中:
第1圖描繪在太陽能電池製備中涉及在於基板的背面上所形成的第一薄介電層上形成第一導電型的第一矽層的階段的剖面圖。
第2圖描繪第1圖之絕緣層及第一矽層的圖樣化以形成具有絕緣罩在其上的第一導電型的第一矽區域後的結構的剖面圖及對應的平面圖。
第3圖描繪第2圖之基板中溝槽的表面的紋理化以形成紋理化凹槽或具有紋理化表面的溝槽後的結構的剖面圖。
第4圖描繪第3圖之第二及第三薄介電層及第二矽層的形成後的結構的剖面圖及對應的平面圖。
第5圖描繪第4圖在第二矽層的圖樣化以形成隔絕的第二矽區域及在第一矽區域的絕緣罩之上的第二矽層的區域中形成接觸開口後的結構的剖面圖及對應的平面圖。
第6圖描繪第5圖在複數個導電接觸的形成後的結構的剖面圖。
第7圖係為根據本發明之實施例列出對應於第1圖至第6圖的太陽能電池的製造之操作方法的流程圖。
第8A圖及第8B圖係為根據本發明之另一實施例描繪另一太陽能電池的製備中各階段的剖面圖。
第9圖係為列出根據本發明之實施例中製備太陽能電池的另一操作方法的流程圖。
以下之詳細描述僅為說明性質,且不意圖限制申請標的實施例或此些實施例之應用及使用。如用於本文中,用字「例示性」表示「用作為範例、例子或說明」。本文中被描述為例示性之任何實施方式不必然被解釋為較佳或優於其他實施方式。另外,不意圖被出現在前述技術領域、先前技術、發明內容或以下實施方式中明示或暗示之理論所束縛。
本說明書包含參照「一個實施例(one embodiment)」或「一實施例(an embodiment)」。「在一個實施例中」及「在一實施例中」之語句的出現不必然表示相同實施例。具體特徵、結構或特性可以與本發明相符之任何適當地方式結合。
術語,以下段落提供在本發明中找到之用語的定義及/或語境(包含所附之申請專利範圍):
「包含(Comprising)」,此術語為開放式的。當用於所附之申請專利範圍時,此用語不排除其他結構或步驟。
「配置以」,各種單元或組件可描述或主張為「配置以」執行一或多個工作。在這樣的內文中,使用「配置以」以藉由指出單元/組件包含在操作期間執行那些一或多個工作的結構而暗示結構。因此,即使當特定單元/組件不是目前正在運作的(例如,不是開啟/活動的),單元/組件也可說是被配置以進行工作。描述單元/電路/組件被「配置以」執行一或多個工作是明確地對於所述單元/組件,不意圖援引35 U.S.C.§112,第六段。
「第一(First)」、「第二(Second)」等,如在本文中使用,這些用語係用作為其所前綴之名詞的標示,而不意味著任何形式的排序(例如,空間、時間、邏輯等)。舉例來說,參照「第一」太陽能電池不必然意味著此太陽能電池在順序上為第一個太陽能電池;相反地,用語「第一」係用以區分另一太陽能電池(例如,「第二」太陽能電池)與此太陽能電池。
「耦接(Coupled)」-以下描述表示元件或節點或特徵被「耦接」在一起。如在本文中使用,除非另有明確地指出,否則「耦接」表示一元件/節點/特徵係直接地或間接地連接至(或直接地或間接地相通於)另一元件/節點/特徵,而不必然為機械上的。
「抑制(Inhibit)」-如本文所使用的,抑制被用來描述減少或最小化影響。當組件或特徵被描述來抑制動作、運動或狀況時,其可完全避免其結果或成果或未來的狀態。另外,「抑制」也可表示否則可能另外發生的成果、性能及/或影響的減少或減輕。因此,當組件、元件或特徵被表示來抑制結果或狀態時,其不需完全避免或消除該結果或狀態。
此外,一些用語也可僅為了參考之目的而使用在以下描述中,並且因此不意圖為限制。例如,用語如「上部(upper)」、「下部(lower)」、「上方
(above)」及「下方(below)」表示進行參照之圖式中的方向。用語如「前(front)」、「後(back)」、「背(rear)」、「側(side)」、「外側(outboard)」及「內側(inboard)」藉由參照討論中描述組件之內文及相關圖式,描述於變得明確之參照的一致但任意框架中的組件部分的方向及/或位置。這樣的用語可包含上面具體地提到的文字、其衍生及類似含意的文字。
以差異化P型與N型架構及整合點擴散法來製備太陽能電池的射極區域的方法、及其所得之太陽能電池,將在本文中描述。在以下敘述中,描述了許多具體細節,像是具體操作流程,以提供本發明實施例之透徹的理解。對於所屬技術領域中具有通常知識者將顯而易見的是,本揭露實施例可無需此些具體細節地執行。於其他例子中,習知之製造技術,像是微影及圖樣化技術不詳細描述以免不必要地模糊本揭露實施例。另外,將理解的是,圖式中所示之各種實施例為說明性地表示,且不必然按比例繪製。
本文所揭露的是太陽能電池。在一個實施例中,太陽能電池包含具有光接收表面及背面的基板。第一導電型的第一多晶矽射極區域設置在於基板的背面上所設置的第一薄介電層上。相異之第二導電型的第二多晶矽射極區域設置在於基板的背面中的複數個非連續溝槽中所設置的第二薄介電層上。
本文亦揭露製備太陽能電池的方法。在一個實施例中,製備太陽能電池的方法涉及形成第一導電型的第一矽層在於基板的背面上所形成的第一薄介電層上,以提供太陽能電池的第一射極區域。基板具有光接收表面及背面。方法也涉及形成絕緣體層(insulator layer)在第一矽層上。方法也涉及形成複數個開口在絕緣體層及第一矽層中及形成對應的複數個非連續溝槽在基板的背面
中。方法也涉及形成相異之第二導電型的第二矽層在於複數個非連續溝槽中所形成的第二薄介電層上以提供太陽能電池的第二射極區域。
在另一實施例中,製備太陽能電池的交替的N型及P型射極區域的方法涉及形成P型矽層在於N型單晶矽基板的背面上所形成的第一薄介電層上。方法也涉及形成絕緣層(insulating layer)在P型矽層上。方法也涉及藉由雷射剝蝕來圖樣化絕緣層及P型矽層,以形成具有絕緣罩在其上的P型矽區域並暴露N型單晶矽基板的複數個區域,N型單晶矽基板的各複數個區域具有形成在N型單晶矽基板中的複數個非連續溝槽。方法也涉及形成第二薄介電層在P型矽區域的暴露側上。方法也涉及形成N型矽層在第二薄介電層上、在P型矽區域的絕緣罩上及N型單晶矽基板的各複數個區域的各複數個非連續溝槽中所形成的第三薄介電層上。方法也涉及圖樣化N型矽層以形成隔絕的N型矽區域及形成接觸開口在P型矽區域的絕緣罩之上的N型矽層的區域中,各隔絕的N型矽區域電性耦接對應的其中一N型單晶矽基板的複數個區域。方法也涉及形成複數個導電接觸,各導電接觸電性連接其中一P型矽區域或其中一隔絕的N型矽區域。
本文所描述的一或更多實施例是針對藉由點擴散法的太陽能電池的製備。在一實施例中,以差異化P型及N型架構來實施點擴散設計使雷射圖樣化的射極的製備更穩定且有較低的反向偏壓崩潰。點擴散法可利用雷射剝蝕來製備,如下面更詳細地描述。然而,在其他實施例中,非雷射島擴散形成也可被實施,例如,通過印刷蝕刻劑的使用,或通過遮罩及蝕刻方法。
為了提供前後關係,在傳統太陽能電池架構中使用雷射以圖樣化射極可能是具有挑戰性的,因為,有線性射極,材料的顯著區域需要去除。當二極體激發固態(diode-pumped solid state,DPSS)雷射被使用時去除可能是難以
執行的且可能造成每小時單位產出(UPH)的挑戰。一些設計也依靠邊緣垂直側壁接面作為反向偏壓崩潰的途徑,且因此需要非常均勻。重疊的點被使用的「乾淨的」雷射製程的使用以形成這樣的邊緣垂直側壁接面可能是困難的,通常的情況為脈衝雷射形成連續的射極。反向崩潰電壓也是正比於作為崩潰區域的對接接面的長度。
處理一或更多前面的問題,在一實施例中,移動至點設計,其中點(spot)的尺寸可被簡單地控制,且高密度的點可被放置,可能帶來裝置的崩潰性能的改善。在具體的實施例中,形成點陣列作為射極可實現更快速的雷射處理、用於更佳的側壁的更均勻的剝蝕(例如,非重疊的點)、更低能量的使用(例如,打開紫外光雷射(UV laser)開口,這對於側壁均勻性也是更好的)且可改善崩潰電壓。其他具有差異化P型及N型架構的使用點射極設計的效益可包含(1)增加接面面積以有較低的崩潰電壓;(2)消除重疊的需要以形成連續的射極;(3)改善UPH問題;(4)改善邊緣重疊及控制問題;(5)藉由使用毯覆N型非晶矽(n-a-Si)沉積來減少島接觸問題;(6)實現基板的離散的N型區域(N島塊(N-islands))的單一、雙重、三重等列的形成;(7)實現島尺寸的調諧(tuning);及/或(8)實現基於UV或CO2的雷射源的使用以乾淨地去除氧化物及創造乾淨的側壁,而射極沒有顯著的損害,上述的其中之一或多個。
在第一例示性製程流程中,第1圖至第6圖根據本發明之實施例,描繪太陽能電池的製備中各階段的剖面圖。第7圖是根據本發明之實施例,對應於第1圖至第6圖列出太陽能電池的製備之操作方法的流程圖700。
參考第1圖及流程圖700的對應操作702,太陽能電池的製備交替N型及P型射極區域的方法涉及形成第一導電型的第一矽層106在於基板102的背面上所形成的第一薄介電層104上。
於一實施例中,基板102為單晶矽基板,例如塊材單晶N-型摻雜矽基板。然而,將理解的是,基板102可為設置在整體太陽能電池(global solar cell)基板上之層,像是多晶矽層。在一實施例中,第一薄介電層104為如穿隧介電氧化矽層的具有大約2奈米或更小的厚度的薄氧化物層。
在一實施例中,第一矽層106為無論是通過同步摻雜,沉積後植入,或是其組合而被摻雜以具有第一導電型的多晶矽層。在另一實施例中,第一矽層106為例如藉由在非晶矽層的沉積之後被植入有第一導電型的摻質的a-Si:H所代表之氫化矽層的非晶矽層。在一個這樣的實施例中,第一矽層106隨後被退火(至少一些隨後的製程流程的階段)以最終形成多晶矽層。在一實施例中,對於不論是多晶矽層或非晶矽層,若沉積後植入被執行,植入是藉由使用離子束植入或電漿浸入植入來執行。在一個這樣的實施列中,陰影遮罩被用於植入。在一具體的實施例中,第一導電型為P型(例如,使用硼雜質原子來形成)。
再次參考第1圖,且現在參考流程圖700的對應的操作704,絕緣層108形成在第一矽層106上。在一實施例中,絕緣層108包含二氧化矽。
參考第2圖及流程圖700的對應的操作706,絕緣層108及第一矽層106被圖樣化以形成在其上具有絕緣罩112的第一導電型的第一矽區域110。在一實施例中,雷射剝蝕製程(例如,直接寫入(write))被用來圖樣化絕緣層108及第一矽層106。在適用的情況下,在一個實施例中,第一薄介電層104也在製程中被
圖樣化,如在第2圖中所描述的。將理解的是第2圖的剖面圖是沿著第2圖的平面圖的a-a’軸截取。
在一實施例中,第2圖的雷射剝蝕製程暴露N型單晶矽基板102的複數個區域溝槽109。N型單晶矽基板102的各複數個區域溝槽109可被視為在形成在N型單晶矽基板102中的溝槽之間具有絕緣罩112之間距(間距見於平面圖)的複數個非連續溝槽(見於剖面圖)。溝槽109具有進入基板深度111或厚度的選擇係在第2圖的剖面圖中描述。在一個這樣的實施例中,各複數個非連續溝槽109在雷射剝蝕下形成為進入基板102中的小於大約10微米的非零深度111。
如前面所提到的,複數個開口及對應的複數個非連續溝槽109可藉由應用雷射剝蝕製程來形成。在一實施例中,使用雷射剝蝕製程提供各複數個非連續溝槽為大約在30-60微米範圍內的寬度(例如,最大直徑)。在一個這樣的實施例中,複數個非連續溝槽109的連續部分被形成為大約在50-300微米範圍內距離的間隔。遠小於50微米的距離可能帶來溝槽的重疊的可能性,這可能不是所希望的,如前面所描述。換句話說,遠大於300微米的距離可能導致對於隨後形成的接觸點的接觸電阻增加及連結一些溝槽109。在一實施例中,雷射剝蝕製程涉及使用具有近似高斯分佈或具有近似平頂分佈的雷射光束。
參考第3圖,可選地,溝槽109的表面可被紋理化以在基板102之中形成具有紋理化表面116的紋理化凹槽114或溝槽。在相同或相似的製程中,基板102的光接收表面101也可被紋理化,如在第3圖中所描述的。在一實施例中,氫氧系濕蝕刻劑被用以形成至少一部分的凹槽114及/或紋理化基板102的暴露部分。紋理化的表面可為具有規則或不規則形狀之用於散射入射光、減少太陽能電池之光接收及/或暴露表面反射掉之光量的表面。然而,將理解的是,背
面乃至凹槽形成的紋理化可從製程流程省略。也將理解的是,如果應用,紋理化可由原本形成的深度增加溝槽109的深度。
參考第4圖及流程圖700的對應的操作708,第二薄介電層118形成在第一矽區域110的暴露側上。在一實施例中,第二薄介電層118在氧化製程中形成且為如具有大約2奈米或更小的厚度的穿隧介電氧化矽層的薄氧化層。在另一實施例中,第二薄介電層118在沉積製程中形成且為薄氮化矽層或氮氧化矽層。將理解的是第4圖的剖面圖是沿著第4圖的平面圖的b-b’軸截取。
再次參考第4圖,且現在參考流程圖700的對應的操作710,相異之第二導電型的第二矽層120形成在於基板102的背面的暴露部分上所形成的第三薄介電層122上(例如,形成在N型單晶矽基板102的各複數個區域的各複數個非連續溝槽109中),及在第二薄介電層118及第一矽區域110的絕緣罩112上。可同時在剖面圖及平面圖中看出,第二矽層120覆蓋(從上往下的角度)溝槽區域109。
再次參考第4圖,對應的薄介電層122’及第二導電型的第二矽層120’也可形成在基板102的光接收表面101上,在相同或相似的製程操作中,如同也是在第4圖中所描述的。此外,雖然未描述,ARC層可形成在對應的第二矽層120’上。
在一實施例中,第三薄介電層122在氧化製程中形成且為如具有大約2奈米或更小的厚度的穿隧介電氧化矽層的薄氧化層。在一實施例中,第二矽層120為無論是通過同步摻雜(situ doping)、沉積後植入、或是其組合而被摻雜以具有第二導電型的多晶矽層。在另一實施例中,第二矽層120為例如藉由在非晶矽層的沉積之後被植入有第二導電型的摻質的a-Si:H所表示之氫化矽層的非
晶矽層。在一個這樣的實施例中,第二矽層120隨後被退火(至少一些隨後的製程流程的階段)以最終形成多晶矽層。在一實施例中,對於不論是多晶矽層或非晶矽層,若沉積後植入被執行,植入是藉由使用離子束植入或電漿浸入植入來執行。在一個這樣的實施例中,陰影遮罩被用於植入。在一具體的實施例中,第二導電型為N型(例如,使用磷原子或砷雜質原子來形成)。
參考第5圖及流程圖700的對應的操作712,第二矽層120被圖樣化以形成隔絕的第二導電型的第二矽區域124及形成接觸開口126在第一矽區域110的絕緣罩112之上的第二矽層120之區域中。在一實施例中,各隔絕的N型第二矽區域124電性耦接對應的N型單晶矽基板102的複數個區域溝槽109中的其中之一個(或多個)。在一實施例中,多晶矽區域125的離散的區域可保留作為圖樣化製程的人工產物(artifact)。在一實施例中,雷射剝蝕製程被用以圖樣化第二矽層120。將理解的是第5圖的剖面圖是沿著第5圖的平面圖的c-c’軸截取。
再次參考第5圖,絕緣罩112通過接觸開口126而被圖樣化以暴露部分第一矽區域110。在一實施例中,使用雷射剝蝕製程來圖樣化絕緣罩112。舉例來說,在一個實施例中,第一雷射階段被用以圖樣化第二矽層120,包含形成接觸開口126。於接觸開口126之相同位置,第二雷射階段被用以圖樣化絕緣罩112。可從第5圖的平面圖看出,在一實施例中,從上往下的角度,單一隔絕的第二矽區域124(例如,單一隔絕的N型矽區域)覆蓋複數個開口中的一條(在第5圖中示出每單一隔絕第二矽區域124之三個開口之一條)。
參考第6圖及流程圖700的對應的操作714,複數個導電接觸被形成,各導電接觸電性連接其中一P型矽區域或其中一隔絕的N型矽區域。在一例示性實施例中,金屬晶種層128形成在第一矽區域110的暴露部分上及在隔絕的
第二矽區域124上。金屬層130然後被鍍上金屬晶種層以分別對第一矽區域110及隔絕的第二矽區域124形成導電接觸132及導電接觸134。在一實施例中,金屬晶種層128為鋁系金屬晶種層,而金屬層130為銅層。在一實施例中,遮罩首先被形成以僅暴露第一矽區域110的暴露的部分及隔絕的第二矽區域124,以針對金屬晶種層128的形成來限制位置。
從而,本文描述的一或更多實施例是針對為了太陽能電池形成P+及N+多晶矽射極區域,其中各個P+及N+多晶矽射極區域的結構是彼此不相同的。這樣的方法可被實施以簡化太陽能電池製備的製程。此外,所得到的結構可提供與其他太陽能電池架構相比較低的崩潰電壓及較低的電力損失。
再次參考第6圖,在一實施例中,完成的太陽能電池包含具有光接收表面101及對應的背面的基板102。第一導電型的第一多晶矽射極區域之第一矽區域110設置在於基板102的背面上所設置的第一薄介電層104上。相異之第二導電型的第二多晶矽射極區域之第二矽區域124設置在基板102的背面中複數個非連續溝槽(如在第6圖的剖面圖中示出的凹槽)中所設置的第三薄介電層122上。在一實施例中,基板102為N型單晶矽基板,第一導電型為P型,而第二導電型為N型。在一實施例中,太陽能電池為背接觸太陽能電池,如在第6圖中所描述的。
在一實施例中,各複數個非連續溝槽具有大約在30-60微米範圍內的寬度,如結合第2圖所描述的。在一實施例中,複數個非連續溝槽109的連續部分被以大約在50-300微米範圍內的距離間隔,也如結合第2圖所描述的。在一實施例中,如從背面進入基板102,各複數個非連續溝槽具有大約在0.5-10微米範圍內的深度。最後的溝槽深度可從雷射剝蝕、紋理化製程或兩者來形成。在
一實施例中,各非連續溝槽具有近似圓形的形狀,如在第2圖、第4圖及第5圖的平面圖中所描述的。如在第6圖中所描述的,各非連續溝槽具有紋理化表面。
再次參考第6圖,在一實施例中,太陽能電池進一步包含橫向直接設置在第一多晶矽射極區域之第一矽區域110及第二多晶矽射極區域之第二矽區域124之間的第二薄介電層118。在一實施例中,太陽能電池進一步包含電性連接至第一多晶矽射極區域之第一矽區域110的第一導電接觸132、及電性連接至第二多晶矽射極區域之第二矽區域124的第二導電接觸134。在一實施例中,太陽能電池進一步包含設置在第一多晶矽射極區域之第一矽區域110上的絕緣體層之絕緣罩112。第一導電接觸132通過絕緣體層來設置。在一個這樣的實施例中,部分第二多晶矽射極區域之第二矽區域124重疊絕緣體層但與第一導電接觸分離,如在第6圖中所描述的。在進一步的實施例中,第二導電型的多晶矽區域125設置在絕緣體層上,而第一導電接觸132通過第二導電型的多晶矽區域125及通過絕緣體層來設置,如在第6圖中所描述的。
在另一態樣中,本文所描述的一或更多實施例是針對用於太陽能電池製備的矽化物形成。矽化物材料可被整合進最後的太陽能電池結構中,如背接觸或前接觸太陽能電池結構。對於太陽能電池的多晶矽射極區域的金屬化使用矽化物材料可對這樣的太陽能電池提供較簡單的金屬化製程。舉例來說,如在下面更加詳細描述的,矽化物技術被用以對接觸點形成從金屬晶種層製程有效去除遮罩操作。此外,對準問題可因為矽化物製程為自我對準製程而被減少。
在第二例示性製程流程中,第8A至8B圖根據本發明之實施例,描繪另一太陽能電池的製備中各階段的剖面圖。第二例示性製程流程從第5圖的結構移動至第8A圖的結構。
參考第8A圖,在圖樣化第二矽層120及絕緣罩112(如結合第5圖所描述的)之後,金屬矽化物層828從圖樣化的第二矽層的暴露的表面及從第一矽區域110的暴露的部分形成。在一實施例中,金屬矽化物層藉由形成毯覆金屬層在第5圖的整個結構上來形成,加熱毯覆金屬層來與暴露的矽反應及形成金屬矽化物。毯覆金屬層的未反應部分然後被去除,例如,使用選擇性的來形成矽化物材料的濕化學清理製程。在一個實施例中,金屬矽化物層828包含如矽化鈦(TiSi2)、矽化鈷(CoSi2)、矽化鎢(WSi2)或矽化鎳(NiSi或NiSi2)的材料,但不限於此。在一實施例中,快速熱處理(rapid thermal processing,RTP)退火被用以形成矽化物。在那個實施例中,在射極區域的矽層中的摻質在相同的RTP製程中被活化。在一個實施例中,RTP製程在無氧或低氧環境中執行以減少矽化物金屬的氧化。然而,在另一個實施例中,矽化物製程溫度低於用於摻質活化的單獨退火的溫度。
參考第8B圖,金屬層830被鍍上金屬矽化物層,以分別對第一矽區域110及隔絕的第二矽區域124形成導電接觸832及導電接觸834。在一個實施例中,金屬層830為銅層。在一個實施例中,金屬矽化物層在鍍金屬在其上之前被化學活化。在另一實施例中,替代鍍金屬、鋁(Al)箔焊接製程被用以完成接觸點形成。
將理解的是結合第8A圖及第8B圖所描述的用於接觸點形成的矽化製程,對比結合第6圖所描述的接觸點形成,少用了一個遮罩。特別是,在矽
化製程中因為矽化物將僅形成在其中已被圖樣化之暴露的矽區域上,所以晶種層不需要藉由遮罩來導向。因此,在一實施例中,矽化製程為可對電池接觸點的製備可達成來實施以減輕對準問題及可能減少間隔的自我對準製程。
或許更普遍地,涵蓋前述兩個製程流程的製程結合第9圖來描述。第9圖是為列出根據本發明之實施例中,製備太陽能電池的另一操作方法的流程圖900。參考第9圖的流程圖900的操作902,製備太陽能電池的方法涉及形成第一導電型的第一矽層在於基板的背面上所形成的第一薄介電層上。在一實施例中,這個製程操作提供太陽能電池的第一射極區域。參考第9圖的流程圖900的操作904,方法也涉及形成絕緣體層在第一矽層上。參考第9圖的流程圖900的操作906,方法也涉及形成複數個開口在絕緣體層及第一矽層中,且形成對應的複數個非連續溝槽在基板的背面中。參考第9圖的流程圖900的操作908,方法也涉及形成相異之第二導電型的第二矽層在於複數個非連續溝槽中所形成的第二薄介電層上。在一實施例中,這個製程操作提供太陽能電池的第二射極區域。
雖然某些材料參考前面描述的實施例被具體地描述,但一些材料可輕易的以其他材料取代,且其它這樣的實施例仍在本發明的實施例的精神和範疇之內。舉例來說,在一實施例中,不同的材料基板,例如III-V族材料基板,可被用於取代矽基板。此外,雖然顯著地參考背接觸太陽能電池配置,但將理解的是本文所描述的方法同樣可具有對於前接觸太陽能電池的應用。在其它實施例中,前述的方法可被適用於製造其它的太陽能電池。舉例來說,製造發光二極體(LEDs)可受益於本文所描述的方法。
此外,在一實施例中,集束電漿輔助化學氣相沉積(cluster plasma enhanced chemical vapor deposition,PECVD)工具可被用以在製程工具中結合許
多前述製程操作為單一階段。舉例來說,在一個這樣的實施例中,多達四個不同的PECVD操作及RTP操作可在集束型工具中以單一階段執行。PECVD操作可包含如前述的背側P+多晶矽層、前及後側N+多晶矽層以及ARC層的層的沉積。
從而,以差異化P型與N型架構及整合點擴散法來製備太陽能電池的射極區域的方法、及其所得之太陽能電池,已被揭露。
雖然已在前描述了具體的實施例,然而即使關於特定的特徵僅描述單一實施例,這些實施例並不意圖限制本揭露的範疇。除非另有說明,否則在本發明中所提供的特徵之示例是意圖為說明性的而非限制性的。對所屬技術領域中具有通常知識者而言,前面的描述係意在涵蓋具有本發明的利益之此類替代物、修改物及等效物。
本發明的範疇包含在本文中所揭露的任何特徵或特徵的組合(明顯地或隱含地),或者其任何概括,而不論其是否減輕了本文中所解決的任何問題或所有問題。因此,在本申請(或其聲明優先權的申請案)的審查期間,可制定新的申請專利範圍成任何這樣的特徵組合。特別是,參照所附的申請專利範圍,來自附屬項的特徵可與獨立項的特徵組合,而來自各獨立項的特徵可以任何適當的方式組合,且不僅為所附的申請專利範圍中所列舉的特定組合。
700‧‧‧流程圖
702、704、706、708、710、712、714‧‧‧操作
Claims (20)
- 一種太陽能電池,其包含:一基板,係具有一光接收表面及一背面;一第一導電型之一第一多晶矽射極區域,係設置在於該基板的該背面上所設置的一第一薄介電層上;以及相異之一第二導電型之一第二多晶矽射極區域,係設置在於該基板的該背面中複數個非連續溝槽中所設置的一第二薄介電層上。
- 如申請專利範圍第1項所述之太陽能電池,其中各該複數個非連續溝槽具有大約在30-60微米範圍內的寬度,且其中該複數個非連續溝槽的連續部分被以大約在50-300微米範圍內的距離間隔開。
- 如申請專利範圍第2項所述之太陽能電池,其中各該複數個非連續溝槽具有從該背面進入該基板的大約在0.5-10微米範圍內的深度。
- 如申請專利範圍第1項所述之太陽能電池,其中各該複數個非連續溝槽具有近似圓形的形狀。
- 如申請專利範圍第1項所述之太陽能電池,其中各該複數個非連續溝槽具有一紋理化表面。
- 如申請專利範圍第1項所述之太陽能電池,其進一步包含:一第三薄介電層,係橫向直接設置在該第一多晶矽射極區域及該第二多晶矽射極區域之間。
- 如申請專利範圍第1項所述之太陽能電池,其進一步包含: 一第一導電接觸結構,係電性連接至該第一多晶矽射極區域;以及一第二導電接觸結構,係電性連接至該第二多晶矽射極區域。
- 如申請專利範圍第1項所述之太陽能電池,其進一步包含:一絕緣體層,係設置在該第一多晶矽射極區域上,其中一第一導電接觸結構通過該絕緣體層來設置,且其中該第二多晶矽射極區域的一部分重疊該絕緣體層但從該第一導電接觸結構分離。
- 如申請專利範圍第1項所述之太陽能電池,其進一步包含:一絕緣體層,係設置在該第一多晶矽射極區域上;以及該第二導電型之一多晶矽層,係設置在該絕緣體層上,其中一第一導電接觸結構通過該第二導電型的該多晶矽層及通過該絕緣體層來設置。
- 如申請專利範圍第1項所述之太陽能電池,其中該基板為一N型單晶矽基板,該第一導電型為P型,而該第二導電型為N型,且其中該太陽能電池為一背接觸太陽能電池。
- 一種製備太陽能電池的方法,該方法包含:形成一第一導電型的一第一矽層在於一基板的一背面上所形成的一第一薄介電層上,以提供該太陽能電池的一第一射極區域,該基板具有一光接收表面及該背面;形成一絕緣體層在該第一矽層上;形成複數個開口在該絕緣體層及該第一矽層中以及形成對應的複數個非連續溝槽在該基板的該背面中; 形成相異之一第二導電型的一第二矽層在於該複數個非連續溝槽中所形成的一第二薄介電層上,以提供該太陽能電池的一第二射極區域。
- 如申請專利範圍第11項所述之方法,其中形成該複數個開口及對應的該複數個非連續溝槽包含應用一雷射剝蝕製程。
- 如申請專利範圍第12項所述之方法,其中應用該雷射剝蝕製程包含形成具大約在30-60微米範圍內的寬度的各該複數個非連續溝槽,及形成以大約在50-300微米範圍內的距離間隔的該複數個非連續溝槽的連續部分。
- 如申請專利範圍第13項所述之方法,其中應用該雷射剝蝕製程包含形成各該複數個非連續溝槽為進入該基板中的小於大約10微米的非零深度。
- 如申請專利範圍第12項所述之方法,其中應用該雷射剝蝕製程包含使用具有近似高斯分佈或具有近似平頂分佈的一雷射光束。
- 如申請專利範圍第11項所述之方法,其進一步包含:在形成該第二矽層及該第二薄介電層在該複數個非連續溝槽中之前,紋理化各該複數個非連續溝槽的一底面。
- 一種根據申請專利範圍第11項所述之方法所製備之太陽能電池。
- 一種製備太陽能電池的交替N型及P型射極區域的方法,該方法包含: 形成一P型矽層在於一N型單晶矽基板的一背面上所形成的一第一薄介電層上;形成一絕緣層在該P型矽層上;藉由雷射剝蝕來圖樣化該絕緣層及該P型矽層,以形成具有一絕緣罩在其上的一P型矽區域並暴露該N型單晶矽基板的複數個區域,該N型單晶矽基板的各該複數個區域包含形成在該N型單晶矽基板中的複數個非連續溝槽;形成一第二薄介電層在該P型矽區域之暴露側上;形成一N型矽層在該第二薄介電層上、在該P型矽區域的該絕緣罩上及該N型單晶矽基板的各該複數個區域的各該複數個非連續溝槽中所形成的一第三薄介電層上;圖樣化該N型矽層以形成一隔絕N型矽區域及形成一接觸開口在該P型矽區域的該絕緣罩之上的該N型矽層的區域中,各該隔絕N型矽區域電性耦接至該N型單晶矽基板的該複數個區域之對應的一個;以及形成複數個導電接觸,各該複數個導電接觸電性連接至該P型矽區域之其中一個或該隔絕N型矽區域之其中一個。
- 如申請專利範圍第18項所述之方法,其中該P型矽層及該N型矽層形成為一非晶矽層,該方法進一步包含:退火該P型矽層及該N型矽層以分別形成一P型多晶矽層及一N型多晶矽層。
- 一種根據申請專利範圍第18項所述之方法所製備之太陽能電池。
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