TW201626421A - Apparatus for inspecting a substrate, method for inspecting a substrate, large area substrate inspection apparatus - Google Patents

Apparatus for inspecting a substrate, method for inspecting a substrate, large area substrate inspection apparatus Download PDF

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TW201626421A
TW201626421A TW104139058A TW104139058A TW201626421A TW 201626421 A TW201626421 A TW 201626421A TW 104139058 A TW104139058 A TW 104139058A TW 104139058 A TW104139058 A TW 104139058A TW 201626421 A TW201626421 A TW 201626421A
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substrate
charged particle
particle beam
imaged
vacuum chamber
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TWI673748B (en
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博海德 穆勒
路維格 雷德
安賽爾 溫雷
利底亞 帕里索利
馬堤爾斯 布魯納
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應用材料股份有限公司
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
    • G01N23/083—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/145—Combinations of electrostatic and magnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513—Liquid crystal panels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95638—Inspecting patterns on the surface of objects for PCB's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/61—Specific applications or type of materials thin films, coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0216—Means for avoiding or correcting vibration effects

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Abstract

An apparatus for inspecting a large area substrate for display manufacturing is described. The apparatus includes a vacuum chamber; a substrate support arranged in the vacuum chamber, wherein the substrate support is configured for supporting the large area substrate for display manufacturing; and a first imaging charged particle beam microscope configured for generating a charged particle beam for inspecting a substrate supported by the substrate support, wherein the first imaging charged particle beam microscope includes a retarding field lens component of an objective lens.

Description

用於檢查基板的設備、用於檢查基板的方法、大面積之基板檢查設備及操作其之方法Apparatus for inspecting a substrate, method for inspecting a substrate, large-area substrate inspection apparatus, and method of operating the same

本揭露書是關於用於檢查基板的一種設備和一種方法。在此所述的實施例更特別是關於用於檢查用於顯示器製造之基板、又更特別是用於顯示器製造之大面積之基板的一種設備和一種方法。The present disclosure relates to an apparatus and a method for inspecting a substrate. The embodiments described herein are more particularly directed to an apparatus and a method for inspecting substrates for display manufacturing, and more particularly for large areas of displays.

在許多應用中，檢查基板以監控基板的品質是必須的。舉例來說，塗佈材料的層所沉積於其上的玻璃基板，係為了顯示器市場而製造。由於缺陷可能例如發生在基板的處理過程中，例如發生在基板的塗佈過程中，檢查基板以對缺陷作複檢和監控顯示器的品質是必須的。In many applications, it is necessary to inspect the substrate to monitor the quality of the substrate. For example, a glass substrate on which a layer of coating material is deposited is manufactured for the display market. Since the defects may occur, for example, during the processing of the substrate, such as during the coating process of the substrate, it is necessary to inspect the substrate to re-examine the defects and monitor the quality of the display.

顯示器通常製造在大面積之基板上，伴隨著持續成長的基板尺寸。另外，顯示器，例如薄膜電晶體顯示器，係受到持續的改善。舉例來說，低溫多晶矽(Low Temperature Poly Silicon, LTPS)是一種其中低能量消耗和有關背光的改善特性能夠被實現的發展。Displays are typically fabricated on a large area of substrate with a continuously growing substrate size. In addition, displays, such as thin film transistor displays, are subject to continuous improvement. For example, Low Temperature Poly Silicon (LTPS) is a development in which low energy consumption and improved characteristics related to backlights can be realized.

基板的檢查能夠例如由一光學系統來進行。然而，低溫多晶矽晶粒結構、晶粒尺寸、和晶粒在晶粒邊緣的表面形貌(topography)，係特別難以使用光學系統複檢，這是由於晶粒尺寸可能低於光學解析度，造成晶粒無法被光學系統看見。對於基板小部分的檢查也已使用帶電粒子束裝置，並結合表面蝕刻來進行。表面蝕刻可提高例如晶界的對比，但會牽涉到使玻璃基板破裂，因此以基板的小塊部分取代整個基板作檢查。於是，在基板的檢查之後繼續處理基板，例如檢驗晶粒結構在最終產品上的影響，是不可能的。The inspection of the substrate can be performed, for example, by an optical system. However, the low-temperature polycrystalline germanium grain structure, grain size, and surface topography of the grain at the edge of the grain are particularly difficult to re-examine using optical systems because the grain size may be lower than the optical resolution, resulting in The grains cannot be seen by the optical system. Inspection of a small portion of the substrate has also been carried out using a charged particle beam device in combination with surface etching. Surface etching can improve the contrast of, for example, grain boundaries, but involves rupturing the glass substrate, thus replacing the entire substrate with a small portion of the substrate for inspection. Thus, it is not possible to continue processing the substrate after inspection of the substrate, for example to verify the effect of the grain structure on the final product.

於是，在例如於大面積之基板的領域對顯示器的品質有著增長的需求的前提下，需要受到改善的用於檢查大面積之基板的設備和方法。Thus, there is a need for an improved apparatus and method for inspecting a large-area substrate on the premise that there is an increasing demand for the quality of the display in the field of, for example, a large-area substrate.

根據一實施例，提供一種用於檢查用於顯示器製造之大面積之一基板的設備。該設備包含：一真空室；一基板支撑件，配置在真空室中，其中基板支撑件係配置成用於支撐用於顯示器製造之大面積之基板；以及一第一成像式帶電粒子束顯微鏡(imaging charged particle beam microscope)，配置成用於產生用於檢查由基板支撑件所支撐之一基板的一帶電粒子束，其中第一成像式帶電粒子束顯微鏡包含一物鏡之一減速電場透鏡元件(retarding field lens component)。According to an embodiment, an apparatus for inspecting a substrate of a large area for display manufacturing is provided. The apparatus comprises: a vacuum chamber; a substrate support disposed in the vacuum chamber, wherein the substrate support is configured to support a large area substrate for display manufacturing; and a first imaged charged particle beam microscope ( An imaging charged particle beam microscope, configured to generate a charged particle beam for inspecting a substrate supported by a substrate support, wherein the first imaged charged particle beam microscope comprises a decelerating electric field lens element of an objective lens (retarding) Field lens component).

根據另一實施例，提供一種用於檢查一基板、特別是用於顯示器製造之大面積之一基板的設備。該設備包含：一真空室；一基板支撑件，配置在該真空室中，其中該基板支撑件提供一基板接收區，該基板接收區具有沿著一第一方向的一第一接收區尺寸；以及一第一成像式帶電粒子束顯微鏡和一第二成像式帶電粒子束顯微鏡，沿著該第一方向具有一距離，該距離為第一接收區尺寸的30%到70%。According to another embodiment, an apparatus for inspecting a substrate, particularly one of a large area for display manufacturing, is provided. The device comprises: a vacuum chamber; a substrate support member disposed in the vacuum chamber, wherein the substrate support member provides a substrate receiving area, the substrate receiving area having a first receiving area size along a first direction; And a first imaged charged particle beam microscope and a second imaged charged particle beam microscope having a distance along the first direction that is between 30% and 70% of the size of the first receiving region.

根據又一實施例，提供一種用於檢查用於顯示器製造之大面積之一基板的方法。該方法包含：提供大面積之該基板在一真空室中；以及以一第一成像式帶電粒子束顯微鏡產生一第一帶電粒子束，其中第一帶電粒子束以2 keV或更低的一著陸能量(landing energy)衝擊在基板上。According to yet another embodiment, a method for inspecting a substrate of a large area for display manufacturing is provided. The method includes: providing a large area of the substrate in a vacuum chamber; and generating a first charged particle beam by a first imaged charged particle beam microscope, wherein the first charged particle beam is landed at 2 keV or lower Landing energy impinges on the substrate.

現在將對於本發明各種範例性的實施例進行詳細說明，其一或多個範例係繪示於各圖之中。各個範例是以解釋的方式來提供，而非意味著作為限制。舉例來說，作為一個實施例的一部分而被繪示或敘述的特徵，能夠被用於或結合其他實施例，以產生另外的實施例。本揭露書包含這樣的修改和變化。Various exemplary embodiments of the invention will be described in detail, and one or more examples are illustrated in the drawings. The examples are provided by way of explanation and are not meant to be limiting. For example, features illustrated or described as part of one embodiment can be used or combined with other embodiments to produce additional embodiments. This disclosure contains such modifications and variations.

在以下對於圖式的敘述中，相同的元件符號意指相同的元件。只有對於個別實施例的不同之處會進行敘述。圖式中所示出的結構不必然是以真實比例作描繪，而是用於提供對於實施例更佳的理解。In the following description of the drawings, the same element symbols mean the same elements. Only the differences between the individual embodiments will be described. The structures shown in the drawings are not necessarily depicted in a true scale, but are used to provide a better understanding of the embodiments.

如在此所使用的用詞「基板」，囊括非可撓性基板和可撓性基板二者，非可撓性基板例如是玻璃基板或玻璃板，可撓性基板例如是軟質基材(web)或箔。基板可為一被塗佈的基板，其中一或更多的材料薄層係塗佈或沉積在該基板上，例如是藉由物理氣相沉積(PVD)製程或化學氣相沉積製程(CVD)。The term "substrate" as used herein encompasses both a non-flexible substrate and a flexible substrate, such as a glass substrate or a glass plate, and the flexible substrate is, for example, a soft substrate (web) ) or foil. The substrate can be a coated substrate in which one or more thin layers of material are coated or deposited on the substrate, such as by a physical vapor deposition (PVD) process or a chemical vapor deposition process (CVD). .

根據一些能夠和在此所述之其他實施例結合的實施例，在此所述的實施例是關於大面積之基板，特別是用於顯示器市場的大面積之基板。In accordance with some embodiments that can be combined with other embodiments described herein, the embodiments described herein are directed to large area substrates, particularly large area substrates for the display market.

根據一些實施例，大面積之基板或各自的基板支撐件，可具有至少1.375平方公尺的一尺寸。該尺寸可從約1.375平方公尺(1100公釐´1250公釐，第5代)到約9平方公尺，尤其是從約2平方公尺到約9平方公尺或甚至高達12平方公尺。根據在此所述的實施例的結構、設備、和方法為其所提供的所謂基板或基板接收區，能夠是如在此所述的大面積之基板。舉例而言，大面積之基板或載具能夠為對應至約1.375平方公尺之基板(1.1公尺×1.25公尺)的第5代、對應至約4.39平方公尺之基板(1.95公尺×2.25公尺)的第7.5代、對應至約5.7平方公尺之基板(2.2公尺×2.5公尺)的第8.5代、或甚至對應至約9平方公尺之基板(2.88公尺×3.130公尺)的第10代。更晚的世代如第11代和第12代及對應的基板面積，能夠以類似的方式實施。According to some embodiments, the large area substrate or the respective substrate support may have a size of at least 1.375 square meters. The size can range from about 1.375 square meters (1100 mm ́1250 mm, 5th generation) to about 9 square meters, especially from about 2 square meters to about 9 square meters or even up to 12 square meters. . The so-called substrate or substrate receiving region provided therefor according to the structures, devices, and methods of the embodiments described herein can be a large-area substrate as described herein. For example, a large area substrate or carrier can be a 5th generation substrate corresponding to a substrate of approximately 1.375 square meters (1.1 meters x 1.25 meters), corresponding to a substrate of approximately 4.39 square meters (1.95 meters x 7.5th generation of 2.25 meters), 8.5th generation corresponding to substrate of 5.7 square meters (2.2 meters × 2.5 meters), or even corresponding to substrate of about 9 square meters (2.88 meters × 3.130 mm) The 10th generation of the ruler). Later generations such as the 11th and 12th generations and corresponding substrate areas can be implemented in a similar manner.

考量到在目前的顯示器製造技術所生產和處理的基板的巨大尺寸，處理或測試整個基板，亦即不使玻璃破裂，特別是項挑戰。由於基板(例如大面積之基板)的尺寸係持續地增加，較大的真空室係用於處理或測試基板。然而，和較小的腔室相比，較大的真空室對於不想要的震動會更為敏感。真空室的一或更多次震動限制了基板能夠以其例如進行檢查的解析度。特別是，具有小於檢查系統之解析度的尺寸的基板缺陷仍將不會被看見，並因此不能夠被探測。Considering the large size of substrates produced and processed in current display manufacturing techniques, processing or testing the entire substrate, i.e., without rupturing the glass, is particularly a challenge. Since the size of the substrate (e.g., a large area substrate) is continuously increased, a larger vacuum chamber is used to process or test the substrate. However, larger vacuum chambers are more sensitive to unwanted vibrations than smaller chambers. One or more vibrations of the vacuum chamber limit the resolution with which the substrate can be inspected, for example. In particular, substrate defects having dimensions smaller than the resolution of the inspection system will still not be seen and therefore cannot be detected.

第1圖根據在此所述的實施例示出用於檢查基板之一設備的側視圖。設備100包含一真空室120。設備100另外包含一基板支撑件110，一基板160可被支撐於其上。設備100包含一第一成像式帶電粒子束顯微鏡130。另外，設備可包含一第二成像式帶電粒子束顯微鏡140。在第1圖所示的範例中，第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140係配置在基板支撑件110上方。Figure 1 shows a side view of one of the devices for inspecting a substrate in accordance with an embodiment described herein. Apparatus 100 includes a vacuum chamber 120. Apparatus 100 additionally includes a substrate support member 110 upon which a substrate 160 can be supported. Apparatus 100 includes a first imaged charged particle beam microscope 130. Additionally, the apparatus can include a second imaged charged particle beam microscope 140. In the example shown in FIG. 1, the first image forming charged particle beam microscope 130 and the second image forming charged particle beam microscope 140 are disposed above the substrate support 110.

如第1圖另外示出的，基板支撑件110沿著x方向150延伸。在第1圖的圖面中，x方向150為一左右方向。一基板160係設置在基板支撑件110上。基板支撑件110係沿著x方向150為可移動的，以在真空室120中相對於第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140位移基板160。於是，基板160的一區能夠位在第一成像式帶電粒子束顯微鏡130下方、或第二成像式帶電粒子束顯微鏡140下方，以進行檢查。該區可含有一測試目標，例如要被測試的、具有例如包含在基板上之一塗層之中或之上的晶粒或缺陷的一區。基板支撑件110也可為沿著y方向(未示出)而可移動的，使得基板160能夠被沿著y方向移動，如以下所討論者。藉由在真空室120內適當地位移夾持基板160的基板支撑件110，可以在真空室120內檢查基板160的整個範圍。As further shown in FIG. 1, the substrate support 110 extends along the x-direction 150. In the drawing of Fig. 1, the x direction 150 is a left-right direction. A substrate 160 is disposed on the substrate support 110. The substrate support 110 is movable along the x-direction 150 to displace the substrate 160 in the vacuum chamber 120 relative to the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140. Thus, a region of the substrate 160 can be positioned below the first imaged charged particle beam microscope 130 or under the second imaged charged particle beam microscope 140 for inspection. The zone may contain a test target, such as a zone to be tested, having, for example, grains or defects contained in or on one of the coatings on the substrate. The substrate support 110 can also be movable along the y-direction (not shown) such that the substrate 160 can be moved in the y-direction, as discussed below. The entire extent of the substrate 160 can be inspected in the vacuum chamber 120 by appropriately displacing the substrate support 110 sandwiching the substrate 160 within the vacuum chamber 120.

第一成像式帶電粒子束顯微鏡130係沿著x方向150從第二成像式帶電粒子束顯微鏡140相距一距離135。在第1圖所繪示的實施例中，距離135為第一成像式帶電粒子束顯微鏡130的一中心和第二成像式帶電粒子束顯微鏡140的一中心之間的距離。特別是，距離135為沿著x方向150、由第一成像式帶電粒子束顯微鏡所定義的一第一光軸131和由第二成像式帶電粒子束顯微鏡140所定義的一第二光軸141之間的距離。第一光軸131和第二光軸141沿著一z方向151延伸。在第1圖的圖面中，z方向151為正交於x方向150的一上下方向。第一光軸131可例如由第一成像式帶電粒子束顯微鏡130的物鏡所定義。類似地，第二光軸141可例如由第二成像式帶電粒子束顯微鏡140的物鏡所定義。根據又另外的能夠和在此所述之其他實施例結合的實施例，距離135也可被定義為第一成像式帶電粒子束顯微鏡130的中心和第二成像式帶電粒子束顯微鏡140的中心之間的距離。成像式帶電粒子束顯微鏡的中心可實質上對應至成像式帶電粒子束顯微鏡的光軸。The first imaged charged particle beam microscope 130 is spaced a distance 135 from the second imaged charged particle beam microscope 140 along the x-direction 150. In the embodiment illustrated in FIG. 1, the distance 135 is the distance between a center of the first imaged charged particle beam microscope 130 and a center of the second imaged charged particle beam microscope 140. In particular, the distance 135 is a first optical axis 131 defined by a first imaging charged particle beam microscope along the x direction 150 and a second optical axis 141 defined by the second imaging charged particle beam microscope 140. the distance between. The first optical axis 131 and the second optical axis 141 extend along a z direction 151. In the drawing of Fig. 1, the z direction 151 is an up and down direction orthogonal to the x direction 150. The first optical axis 131 can be defined, for example, by an objective lens of the first imaging charged particle beam microscope 130. Similarly, the second optical axis 141 can be defined, for example, by an objective lens of the second imaging charged particle beam microscope 140. According to yet another embodiment that can be combined with other embodiments described herein, the distance 135 can also be defined as the center of the first imaged charged particle beam microscope 130 and the center of the second imaged charged particle beam microscope 140. The distance between them. The center of the imaged charged particle beam microscope can substantially correspond to the optical axis of the imaged charged particle beam microscope.

如第1圖另外示出的，真空室120具有沿著x方向150的一內寬121。內寬121可為當沿著x方向從真空室120左手側的牆壁123往真空室120右手側的牆壁122橫越真空室120時所獲得的距離。本揭露書的一方面是關於設備100有關例如x方向150的尺寸。根據實施例，沿著x方向150之第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140之間的距離135可為至少30公分，例如至少40公分。根據另外的能夠和在此所述之其他實施例結合的實施例，真空室120的內寬121可落在第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140之間的距離135的250%到450%的範圍內。As further shown in FIG. 1, vacuum chamber 120 has an inner width 121 along the x-direction 150. The inner width 121 may be a distance obtained when traversing the vacuum chamber 120 from the wall 123 on the left-hand side of the vacuum chamber 120 to the wall 122 on the right-hand side of the vacuum chamber 120 along the x direction. One aspect of the present disclosure relates to the size of device 100 with respect to, for example, the x-direction 150. According to an embodiment, the distance 135 between the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140 along the x-direction 150 may be at least 30 centimeters, such as at least 40 centimeters. According to additional embodiments that can be combined with other embodiments described herein, the inner width 121 of the vacuum chamber 120 can fall between the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140. It is within the range of 250% to 450% of 135.

在此所述的實施例，因而提供一種用於在一真空室中使用二個彼此相距的成像式帶電粒子束顯微鏡檢查一基板、特別是一大面積之基板的設備。該基板係整個在該真空室中進行處理。特別是，在此所述的實施例不需要折斷基板或蝕刻基板的表面。於是提供了缺陷的高解析度影像和良好的晶界對比，特別是藉由一檢查系統，由此大面積之基板能夠在線上被量測。The embodiments described herein thus provide an apparatus for examining a substrate, particularly a large area of substrate, using two imaged charged particle beam microscopes spaced apart from one another in a vacuum chamber. The substrate is entirely processed in the vacuum chamber. In particular, the embodiments described herein do not require breaking the substrate or etching the surface of the substrate. Thus, a high resolution image of the defect and a good grain boundary contrast are provided, in particular by an inspection system, whereby a large area of the substrate can be measured on-line.

和包含單一的用於檢查基板的成像式帶電粒子束顯微鏡的真空室相比，具有二個成像式帶電粒子束顯微鏡提供了基板在檢查過程中行進的範圍減少的優點。於是，真空室的尺寸，比如例如真空室120的內寬121(例如沿著如第1圖所示的x方向150)，和具有單一成像式帶電粒子束顯微鏡的設備相比能夠減少。舉例來說，請參照第1圖所示的結構配置，一缺陷(未示出)可能位在基板160的右手側部分，例如在第二光軸141的右手側。根據在此所述的實施例，基板160可在真空室120中被位移，以將缺陷置於第二成像式帶電粒子束顯微鏡140下方，因此缺陷能夠由第二成像式帶電粒子束顯微鏡140所檢查。與此相比，如果設備100包含第一成像式帶電粒子束顯微鏡130但不包含第二成像式帶電粒子束顯微鏡140，基板將會被沿著x方向150朝著左方位移通過一大段距離，以將缺陷置於由第一成像式帶電粒子束顯微鏡130所檢查的位置。然而第1圖所示的真空室120，對於將缺陷置於第一成像式帶電粒子束顯微鏡130下方而言，在沿著x方向將過於狹窄。於是，將需要具有較大的沿著x方向的內寬的真空室，以允許檢查基板160上任意位置的缺陷。Having two imaged charged particle beam microscopes provides the advantage of a reduced range of substrate travel during inspection compared to a vacuum chamber containing a single imaged charged particle beam microscope for inspection of substrates. Thus, the size of the vacuum chamber, such as, for example, the inner width 121 of the vacuum chamber 120 (e.g., along the x-direction 150 as shown in Figure 1) can be reduced as compared to a device having a single imaged charged particle beam microscope. For example, referring to the structural configuration shown in FIG. 1, a defect (not shown) may be located on the right hand side portion of the substrate 160, such as on the right hand side of the second optical axis 141. According to embodiments described herein, the substrate 160 can be displaced in the vacuum chamber 120 to place defects under the second imaged charged particle beam microscope 140, such that defects can be performed by the second imaged charged particle beam microscope 140 an examination. In contrast, if the apparatus 100 includes the first imaged charged particle beam microscope 130 but does not include the second imaged charged particle beam microscope 140, the substrate will be displaced to the left along the x direction 150 through a large distance. To place the defect at the position examined by the first imaged charged particle beam microscope 130. However, the vacuum chamber 120 shown in Fig. 1 is too narrow in the x direction for placing defects under the first image forming charged particle beam microscope 130. Thus, a vacuum chamber having a larger inner width along the x-direction will be required to allow inspection of defects at any location on the substrate 160.

具有伴隨著減少的尺寸的一真空室，如在此所述的實施例所提供者，其一項優點在於真空室的一或更多次震動可被減少。於是，由於震動的程度是以真空室尺寸的函數增加。於是，基板震動的振幅也可被有利地減少。特別是，於在此所述的實施例中，基板震動的振幅可為10奈米或更小，例如5奈米或更小。One advantage of having a vacuum chamber with reduced dimensions, as provided by the embodiments described herein, is that one or more vibrations of the vacuum chamber can be reduced. Thus, the degree of shock increases as a function of the size of the vacuum chamber. Thus, the amplitude of the substrate vibration can also be advantageously reduced. In particular, in the embodiments described herein, the amplitude of the substrate vibration can be 10 nanometers or less, such as 5 nanometers or less.

一些在此所述的實施例，提供一個成像式帶電粒子束顯微鏡在真空室或真空室中。舉例來說，第9A~9C圖所示的設備100提供一單一的成像式帶電粒子束顯微鏡900。和傳統的用於在真空環境下檢查大面積之基板的帶電粒子束裝置(比如例如具有10公分或更大之視野的電子束測試器)相比，成像式帶電粒子束顯微鏡提供更高的解析度。另外，能夠產生大面積之基板的一部分的影像，其中具有大的視野的電子束測試器通常不產生大面積之基板的一部分的影像。In some embodiments described herein, an imaged charged particle beam microscope is provided in a vacuum chamber or vacuum chamber. For example, device 100 shown in Figures 9A-9C provides a single imaged charged particle beam microscope 900. Imaging charged particle beam microscopy provides higher resolution than conventional charged particle beam devices (such as, for example, electron beam testers with a field of view of 10 cm or greater) for inspecting large areas of substrates in a vacuum environment degree. In addition, an image of a portion of a large area of the substrate can be produced, wherein an electron beam tester having a large field of view typically does not produce an image of a portion of the substrate of a large area.

一成像式帶電粒子束顯微鏡，如在此所使用者，可適用於產生一低能帶電粒子束，其具有2 keV或更低之一著陸能量，特別是1 keV或更低，例如100 eV到800 eV。和高能射束(beam)相比，低能射束不會深深地穿過基板中，並從而可提供更多更佳的關於沉積在基板上的薄層(例如低溫多晶矽層)的資訊。An imaged charged particle beam microscope, as used herein, can be adapted to produce a low energy charged particle beam having a landing energy of 2 keV or less, particularly 1 keV or less, such as 100 eV to 800. eV. Compared to high energy beams, the low energy beam does not penetrate deeply through the substrate and thus provides more and better information about the thin layers deposited on the substrate, such as the low temperature polysilicon layer.

提供基板在低的著陸能量進行高解析度檢查的成像式帶電粒子束顯微鏡，允許對於基板上之缺陷的非破壞性檢查。於是，在此所述的實施例允許測試缺陷對於基板功能的影響。舉例來說，在檢查基板(例如用於顯示器製造的基板)上的一缺陷之後，在此所述的實施例允許測試該缺陷是否毀壞顯示器的功能。亦即，能夠評估該缺陷是否為一「殺手級缺陷」、或顯示器是否在即使該缺陷存在的情況下依然具有功能。於是，由於基板在以低能量進行非破壞性測試之後能夠被進一步地處理，可進行缺陷的殺傷比率分析(kill-ratio analysis)。An imaged charged particle beam microscope that provides high resolution inspection of substrates at low landing energy allows for non-destructive inspection of defects on the substrate. Thus, the embodiments described herein allow testing of the effects of defects on substrate functionality. For example, after examining a defect on a substrate, such as a substrate for display manufacturing, the embodiments described herein allow testing whether the defect ruins the function of the display. That is, it can be evaluated whether the defect is a "killer defect" or whether the display is still functional even if the defect exists. Thus, since the substrate can be further processed after non-destructive testing with low energy, a kill-ratio analysis of the defect can be performed.

然而，一些具有一第一成像式帶電粒子束顯微鏡和一第二成像式帶電粒子束顯微鏡的實施例，如在此所述者，和具有單一成像式帶電粒子束顯微鏡的實施例相比提供了更高的吞吐量(throughput)，這是由於基板可藉由第一成像式帶電粒子束顯微鏡並藉由第二成像式帶電粒子束顯微鏡被平行檢查。舉例來說，基板上之一第一缺陷可由第一成像式帶電粒子束顯微鏡所檢查，而一第二缺陷可由第二成像式帶電粒子束顯微鏡所檢查，其中第一缺陷和第二缺陷的檢查係平行進行。However, some embodiments having a first imaged charged particle beam microscope and a second imaged charged particle beam microscope, as described herein, are provided in comparison to embodiments having a single imaging charged particle beam microscope. Higher throughput, since the substrate can be examined in parallel by a first imaged charged particle beam microscope and by a second imaged charged particle beam microscope. For example, one of the first defects on the substrate can be inspected by a first imaged charged particle beam microscope, and a second defect can be inspected by a second imaged charged particle beam microscope, wherein the first defect and the second defect are inspected. They are carried out in parallel.

根據一些能夠和在此所述之其他實施例結合的實施例，成像式帶電粒子束顯微鏡能夠為掃描式電子顯微鏡(scanning electron microscope, SEM)，其中係以一相當高的解析度提供影像，該解析度例如是15奈米或更小、或甚至更低。According to some embodiments that can be combined with other embodiments described herein, the imaged charged particle beam microscope can be a scanning electron microscope (SEM) in which images are provided at a relatively high resolution. The resolution is, for example, 15 nm or less, or even lower.

一成像式帶電粒子束顯微鏡，如在此所提及者，例如一SEM，可具有在0.5到5公釐的範圍內的一工作距離。從成像式帶電粒子束顯微鏡之柱筒(column)的下邊緣到基板或到基板支撑件的距離，可在6到10公分的範圍內。成像式帶電粒子束顯微鏡的視野可小於1公釐。成像式帶電粒子束顯微鏡可適用於產生具有2 keV或更低、更特別是1 keV或更低之一著陸能量的低能帶電粒子束，例如電子束。相較於此，用於以電子束進行像素測試的裝置，可具有10公分或更大之視野，並可適用於產生具有約10 keV之著陸能量的帶電粒子束。另外，用於以電子束進行像素測試的裝置，可能不會被配置成用於基板的成像，而一成像式帶電粒子束顯微鏡，如在此所述者，提供了被檢查的基板的一區的影像。An imaged charged particle beam microscope, as referred to herein, such as an SEM, can have a working distance in the range of 0.5 to 5 mm. The distance from the lower edge of the column of the imaged charged particle beam microscope to the substrate or to the substrate support can be in the range of 6 to 10 cm. The field of view of an imaged charged particle beam microscope can be less than 1 mm. An imaged charged particle beam microscope can be adapted to produce a beam of low energy charged particles, such as an electron beam, having a landing energy of 2 keV or less, more particularly 1 keV or less. In contrast, a device for pixel testing with an electron beam can have a field of view of 10 cm or more and can be adapted to produce a charged particle beam having a landing energy of about 10 keV. Additionally, a device for pixel testing with an electron beam may not be configured for imaging of a substrate, while an imaged charged particle beam microscope, as described herein, provides a region of the substrate being inspected. Image.

特別是對於具有減少的真空室尺寸(例如是藉由二個成像式帶電粒子束顯微鏡)的實施例而言，減少的真空室震動程度促進了成像式帶電粒子束顯微鏡用於檢查基板的使用。由於真空室震動的振幅可為10奈米或更小，例如5奈米或更小，根據在此所述的實施例，具有高解析度的帶電粒子束裝置，例如具有5奈米或更小之解析度的成像式帶電粒子束顯微鏡，能夠被用於檢查基板。與此相比，在其中基板和帶電粒子束相對於彼此之震動振幅例如大於10奈米的真空室中，如在此所述的成像式帶電粒子束顯微鏡的使用可能不具有意義，這是由於整體的解析度將因系統內的震動而惡化。Particularly for embodiments having reduced vacuum chamber dimensions (e.g., by two imaged charged particle beam microscopes), the reduced degree of vacuum chamber vibration promotes the use of an imaged charged particle beam microscope for inspecting substrates. Since the amplitude of the vibration of the vacuum chamber may be 10 nanometers or less, for example 5 nanometers or less, according to the embodiments described herein, the charged particle beam device having high resolution, for example, has a diameter of 5 nm or less. The resolution of the charged charged particle beam microscope can be used to inspect the substrate. In contrast, in a vacuum chamber in which the amplitude of the vibration of the substrate and the charged particle beam relative to each other is, for example, greater than 10 nm, the use of an imaged charged particle beam microscope as described herein may not be meaningful, due to The overall resolution will be exacerbated by vibrations within the system.

鑑於上述情況，在此所述的實施例，提供了減少的基板和成像式帶電粒子束顯微鏡(例如一SEM)相對於彼此的震動程度，以例如促進使用高解析度帶電粒子束裝置來檢查基板。於是提供了一種改善的用於測試的設備和一種改善的基板的成像。在此所述的實施例可例如用於臨界尺寸(critical dimension, CD)分析或缺陷複檢(defect review, DR)。在此所述的實施例提供令使用大面積之基板的高解析度成像變得可能(例如是藉由在真空室內提供低電壓高解析度電子束測試)的各種特徵、方面、和細節。In view of the foregoing, embodiments described herein provide reduced levels of vibration of the substrate and the imaged charged particle beam microscope (e.g., an SEM) relative to one another to, for example, facilitate inspection of the substrate using a high resolution charged particle beam device. . An improved device for testing and an improved imaging of the substrate are thus provided. Embodiments described herein can be used, for example, for critical dimension (CD) analysis or defect review (DR). Embodiments described herein provide various features, aspects, and details that enable high resolution imaging of substrates using large areas (e.g., by providing low voltage, high resolution electron beam testing in a vacuum chamber).

第8A~8C圖根據在此所述的實施例繪示一種用於檢查一基板160的方法。在提供設備100之俯視圖的第8A~8C圖中，係指示x方向150和一y方向152。在第8A~8C圖的俯視圖中，x方向150為一左右方向，而y方向152為一上下方向。8A-8C illustrate a method for inspecting a substrate 160 in accordance with embodiments described herein. In Figures 8A-8C, which provide a top view of device 100, an x-direction 150 and a y-direction 152 are indicated. In the plan views of FIGS. 8A to 8C, the x direction 150 is a left-right direction, and the y direction 152 is an up-and-down direction.

如第8A~8C圖所示，基板160具有沿著x方向150的一基板寬度810。根據實施例，沿著x方向150、第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140之間的距離135，可落在基板寬度810的30%到70%的範圍內。在第8A~8C圖所示的範例性設備中，距離135約為基板寬度810的50%。根據另外的能夠和在此所述之其他實施例結合的實施例，真空室120的內寬121可落在基板寬度810的130%到180%的範圍內。在第8A~8C圖所繪示的範例性的實施例中，內寬121約為基板寬度810的150%。As shown in FIGS. 8A-8C, the substrate 160 has a substrate width 810 along the x-direction 150. According to an embodiment, the distance 135 between the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140 along the x direction 150 may fall within the range of 30% to 70% of the substrate width 810. . In the exemplary device illustrated in Figures 8A-8C, the distance 135 is approximately 50% of the substrate width 810. According to additional embodiments that can be combined with other embodiments described herein, the inner width 121 of the vacuum chamber 120 can fall within the range of 130% to 180% of the substrate width 810. In the exemplary embodiment illustrated in Figures 8A-8C, the inner width 121 is approximately 150% of the substrate width 810.

第8A~8C圖所示的基板160能夠被視為具有二個區域，亦即一第一區820和一第二區830，其中第一區820位在第二區830的左側。在第8A~8C圖所繪示的範例中，第一區820和第二區830為具有相等尺寸的矩形。特別是，第一區820具有沿著x方向的一第一寬度821，而第二區830具有沿著x方向的一第二寬度831，其中第一寬度821等於第二寬度831。於是，在第8A~8C圖所示的範例性基板160中，基板寬度810為第一寬度821的二倍大，並因此也是第二寬度831的二倍大。特別是，第一寬度821、第二寬度831、與第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140之間的距離135，能夠等大。The substrate 160 shown in FIGS. 8A-8C can be considered to have two regions, namely a first region 820 and a second region 830, wherein the first region 820 is located on the left side of the second region 830. In the example illustrated in FIGS. 8A-8C, the first zone 820 and the second zone 830 are rectangular having equal sizes. In particular, the first zone 820 has a first width 821 along the x-direction and the second zone 830 has a second width 831 along the x-direction, wherein the first width 821 is equal to the second width 831. Thus, in the exemplary substrate 160 shown in FIGS. 8A-8C, the substrate width 810 is twice as large as the first width 821 and thus also twice as large as the second width 831. In particular, the distance 135 between the first width 821, the second width 831, and the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140 can be made equal.

關於在第8A~8C圖所繪示的範例性的實施例，它被視為一個測試目標，例如要被測試、具有一缺陷或一晶粒結構的一區，係位在基板160可由第一成像式帶電粒子束顯微鏡130所檢查的第一區820中，而一個測試目標，例如要被測試、具有一缺陷或一晶粒結構的另一區，係位在基板160可由第二成像式帶電粒子束顯微鏡140所檢查的第二區830中。於是，為了能夠測試基板160的任意測試目標或測試區，亦即在基板的整個表面內的測試目標或測試區(或基板160的整個表面)，基板160沿著x方向150所移動的範圍例如是基板寬度810的約150%。於是，在基板160上任意位置的測試目標的檢查，可在第8A~8C圖所示的真空室120內進行，真空室120具有約為基板寬度810的150%的一內寬121。Regarding the exemplary embodiment illustrated in FIGS. 8A-8C, it is considered as a test target, such as a region to be tested, having a defect or a grain structure, and the system can be first on the substrate 160. In the first region 820 examined by the imaged charged particle beam microscope 130, and a test target, such as another region to be tested, having a defect or a grain structure, the substrate 160 can be charged by the second imaging type. The second region 830 is examined by the particle beam microscope 140. Thus, in order to be able to test any test target or test zone of the substrate 160, ie, a test target or test zone (or the entire surface of the substrate 160) within the entire surface of the substrate, the extent of movement of the substrate 160 along the x-direction 150 is, for example, It is about 150% of the substrate width 810. Thus, the inspection of the test target at any position on the substrate 160 can be performed in the vacuum chamber 120 shown in Figs. 8A-8C, and the vacuum chamber 120 has an inner width 121 of about 150% of the substrate width 810.

第8A~8C圖範例性地示出基板160上的一第一缺陷822和一第二缺陷832，其中第一缺陷822位於第一區820，而第二缺陷832位於第二區830。特別是，如圖所示，第一缺陷822位於接近基板160的左外側邊緣，而第二缺陷832位於接近基板160的右外側邊緣。FIGS. 8A-8C exemplarily illustrate a first defect 822 and a second defect 832 on the substrate 160, wherein the first defect 822 is located in the first region 820 and the second defect 832 is located in the second region 830. In particular, as shown, the first defect 822 is located near the left outer edge of the substrate 160 and the second defect 832 is located near the right outer edge of the substrate 160.

位在第一區820的第一缺陷822係由第一成像式帶電粒子束顯微鏡130所檢查。於是，基板160在真空室120中被位移，以將第一缺陷822置於第一成像式帶電粒子束顯微鏡130下方。第8B圖示出位移後的基板160，其中第一缺陷822係直接地置於第一成像式帶電粒子束顯微鏡130下方。第一缺陷822接著可由第一成像式帶電粒子束顯微鏡130所檢查。第一缺陷822的檢查可包含將由第一成像式帶電粒子束顯微鏡130所產生的一第一帶電粒子束導向到基板160上，如以下所敘述者(比照例如第6A圖)。The first defect 822 located in the first region 820 is inspected by the first imaged charged particle beam microscope 130. The substrate 160 is then displaced in the vacuum chamber 120 to place the first defect 822 under the first imaged charged particle beam microscope 130. FIG. 8B illustrates the displaced substrate 160 with the first defect 822 placed directly beneath the first imaged charged particle beam microscope 130. The first defect 822 can then be examined by the first imaged charged particle beam microscope 130. Examination of the first defect 822 can include directing a first charged particle beam produced by the first imaged charged particle beam microscope 130 onto the substrate 160, as described below (cf., for example, Figure 6A).

在第一缺陷822被藉由第一成像式帶電粒子束顯微鏡130檢查之後，用於檢查的設備可檢查第二缺陷832。位在第二區830的第二缺陷832係由第二成像式帶電粒子束顯微鏡140所檢查。於是，從第8B圖所示的結構配置開始，位移基板160以將第二缺陷832置於第二成像式帶電粒子束顯微鏡140下方。第8C圖示出位移後的基板160，其中第二缺陷832係置於第二成像式帶電粒子束顯微鏡140下方。於是，第二缺陷832可由第二成像式帶電粒子束顯微鏡140所檢查。第二缺陷832的檢查可包含將由第二成像式帶電粒子束顯微鏡140所產生的一第二帶電粒子束導向到基板160上，如以下所敘述者(比照例如第6B圖)。After the first defect 822 is inspected by the first imaged charged particle beam microscope 130, the apparatus for inspection can inspect the second defect 832. The second defect 832 located in the second region 830 is inspected by the second imaged charged particle beam microscope 140. Thus, starting from the structural configuration shown in FIG. 8B, the substrate 160 is displaced to place the second defect 832 under the second imaged charged particle beam microscope 140. FIG. 8C illustrates the displaced substrate 160 with the second defect 832 placed under the second imaged charged particle beam microscope 140. Thus, the second defect 832 can be inspected by the second imaged charged particle beam microscope 140. Examination of the second defect 832 can include directing a second charged particle beam produced by the second imaged charged particle beam microscope 140 onto the substrate 160, as described below (cf., for example, Figure 6B).

根據不同的實施例，特別是操作用於以一成像式帶電粒子束顯微鏡的一設備測試用於顯示器製造的大面積之基板的實施例，用於檢查的設備能夠被供予一檔案夾，其中提供了缺陷的座標。舉例來說，缺陷的座標可由一先前的對於大面積之基板的檢查產生，其中係以一電子束測試像素，而沒有影像產生。已知的缺陷能夠被提供在基板的一繪圖(map)中，亦即，對於操作用於以例如一SEM檢查大面積之基板的系統而言，基板的座標係已知的。用於檢查的設備能夠接著以一第一成像式帶電粒子束顯微鏡(例如一第一SEM)、或一第二成像式帶電粒子束顯微鏡(例如一第二SEM)，使包含缺陷的區成像。藉由提供一第一成像式帶電粒子束顯微鏡和一第二成像式帶電粒子束顯微鏡，能夠增加吞吐量，且/或能夠減少用於將缺陷置於第一或第二成像式帶電粒子束顯微鏡下方的基板的位移。如果第一和第二成像式帶電粒子束顯微鏡之間的距離為基板接收區沿著各別方向的寬度的約50%，基板的位移特別能夠減少。According to various embodiments, in particular an embodiment for operating a large area substrate for display manufacturing with an apparatus of an imaged charged particle beam microscope, the apparatus for inspection can be supplied to a file folder, wherein The coordinates of the defect are provided. For example, the coordinates of the defect can be generated by a previous inspection of a large area substrate in which the pixels are tested with an electron beam without image generation. Known defects can be provided in a map of the substrate, i.e., the system of the substrate is known for operating a system for inspecting a large area of the substrate, for example, by SEM. The apparatus for inspection can then image the area containing the defect with a first imaged charged particle beam microscope (e.g., a first SEM), or a second imaged charged particle beam microscope (e.g., a second SEM). By providing a first imaged charged particle beam microscope and a second imaged charged particle beam microscope, throughput can be increased, and/or can be reduced for placing defects in the first or second imaged charged particle beam microscope The displacement of the substrate below. If the distance between the first and second imaged charged particle beam microscopes is about 50% of the width of the substrate receiving region along the respective directions, the displacement of the substrate can be particularly reduced.

根據又另外的操作用於以一成像式帶電粒子束顯微鏡測試用於顯示器製造之大面積之基板的設備的選項，用於檢查的設備能夠被供予一用於低溫多晶矽製程檢查的座標繪圖。舉例來說，能夠提供一或更多的預定的座標，且額外地或替代性地，能夠提供一或更多的隨機座標。低溫多晶矽晶粒結構係在該些座標(預定的和/或隨機的)附近成像，且低溫多晶矽製程能夠由以成像式帶電粒子束顯微鏡成像所產生的一或更多的參數來表徵(characterize)。另外，額外地或替代性地，一或更多的參數的一致性，能夠由對於不同座標的比較來評估，該些座標可能提供在一繪圖中。According to yet another option for testing equipment for large area substrates for display manufacturing with an imaged charged particle beam microscope, the apparatus for inspection can be supplied with a coordinate plot for low temperature polysilicon process inspection. For example, one or more predetermined coordinates can be provided, and additionally or alternatively, one or more random coordinates can be provided. The low temperature polycrystalline germanium grain structure is imaged near the coordinates (predetermined and/or random) and the low temperature polysilicon process can be characterized by one or more parameters produced by imaging charged particle beam microscopy imaging. . Additionally, additionally or alternatively, the consistency of one or more parameters can be evaluated by comparisons for different coordinates, which may be provided in a plot.

第8A~8C圖所繪示的實施例允許檢查設置在真空室120中基板160上的任意位置的測試目標，例如缺陷，其中該真空室包含二個成像式帶電粒子束顯微鏡，且其中真空室120的內寬121係在基板寬度的130%到180%的範圍內。如以上所討論者，和包含單一的用於檢查基板的成像式帶電粒子束顯微鏡的真空室相比，具有二個成像式帶電粒子束顯微鏡至少沿著x方向有利地提供減少的真空室內寬。第9A~9C圖繪示一實施例，其中如第8A~8C圖所示的相同基板160係使用包含一單一的成像式帶電粒子束顯微鏡900的設備100的一實施例來檢查。由於第一缺陷822和第二缺陷832二者皆由成像式帶電粒子束顯微鏡900所檢查，沿著x方向150的基板160為了將第一缺陷822和第二缺陷832置於成像式帶電粒子束顯微鏡900下方而移動的距離，和第8A~8C圖相比係增加。於是，第9A~9C圖所示的真空室120的內寬121’係大於第8A~8C圖所示的真空室120的內寬121。特別是，由於是要允許使用單一成像式帶電粒子束顯微鏡900檢查基板160上任意位置的缺陷而被提供，第9A~9C圖所示的真空室120的內寬121’至少約為基板寬度810的200%。第8A~8C圖所示的真空室的範圍，係在第9A~9C圖中由虛線910所指示。如圖所示，對於使用第9A~9C圖所示的單一成像式帶電粒子束顯微鏡900進行第一缺陷822和第二缺陷832的檢查，第8A~8C圖所示的真空室沿著x方向150將會過於狹窄。鑑於上述情況，根據一實施例，提供一種用檢查基板、特別是用於顯示器製造的基板的設備。該設備包含一真空室、配置在真空室中的一基板支撑件、一第一成像式帶電粒子束顯微鏡、和一第二成像式帶電粒子束顯微鏡。The embodiment illustrated in Figures 8A-8C allows inspection of a test target, such as a defect, disposed anywhere on the substrate 160 in the vacuum chamber 120, wherein the vacuum chamber includes two imaged charged particle beam microscopes, and wherein the vacuum chamber The inner width 121 of 120 is in the range of 130% to 180% of the width of the substrate. As discussed above, having two imaged charged particle beam microscopes advantageously provides a reduced vacuum chamber width along at least the x-direction as compared to a vacuum chamber comprising a single imaged charged particle beam microscope for inspecting the substrate. 9A-9C illustrate an embodiment in which the same substrate 160 as shown in Figures 8A-8C is inspected using an embodiment of apparatus 100 comprising a single imaged charged particle beam microscope 900. Since both the first defect 822 and the second defect 832 are inspected by the imaged charged particle beam microscope 900, the substrate 160 along the x-direction 150 is placed in the imaged charged particle beam in order to place the first defect 822 and the second defect 832 The distance moved under the microscope 900 is increased as compared with the 8A-8C map. Therefore, the inner width 121' of the vacuum chamber 120 shown in Figs. 9A to 9C is larger than the inner width 121 of the vacuum chamber 120 shown in Figs. 8A to 8C. In particular, since it is to be allowed to use a single imaged charged particle beam microscope 900 to inspect defects at any position on the substrate 160, the inner width 121' of the vacuum chamber 120 shown in Figs. 9A to 9C is at least about the substrate width 810. 200%. The range of the vacuum chamber shown in Figs. 8A to 8C is indicated by a broken line 910 in Figs. 9A to 9C. As shown in the figure, the first defect 822 and the second defect 832 are inspected using the single imaging charged particle beam microscope 900 shown in Figs. 9A to 9C, and the vacuum chambers shown in Figs. 8A to 8C are along the x direction. 150 will be too narrow. In view of the above, in accordance with an embodiment, an apparatus for inspecting a substrate, particularly a substrate for display manufacturing, is provided. The apparatus includes a vacuum chamber, a substrate support disposed in the vacuum chamber, a first imaged charged particle beam microscope, and a second imaged charged particle beam microscope.

設備可為一直線型(inline)設備、或一直線型基板處理系統的局部。一直線型處理系統可包含一或更多的另外的用於處理基板的設備，其中基板可被從一個設備到一接下來的設備運輸通過直線型處理系統。舉例來說，直線型處理系統可包含另外的一腔室，對於直線型處理系統的一基板運輸路徑而言，設置於在此所述的真空室的下游。基板可例如由如在此所述的一位移單元，從真空室被運輸到另外的該腔室，以進一步地處理基板。特別是，根據在此所述的實施例，基板係整個地被處理和運輸，亦即未使基板破裂。基板的測試能夠是沒有損壞的，例如未蝕刻部分基板，這可能惡化另外使用在一檔案裝置(file device)的基板。舉例來說，另外的一腔室可選自由下列選項所組成之群組：一處理室、另外的一測試室、一沉積室、和一顯示器組裝室。The device can be part of an inline device, or a linear substrate processing system. A linear processing system can include one or more additional devices for processing substrates, wherein the substrates can be transported from one device to a subsequent device through a linear processing system. For example, the linear processing system can include an additional chamber disposed downstream of the vacuum chamber described herein for a substrate transport path of the linear processing system. The substrate can be transported from the vacuum chamber to another chamber, for example, by a displacement unit as described herein to further process the substrate. In particular, according to the embodiments described herein, the substrate is entirely processed and transported, i.e., the substrate is not broken. Testing of the substrate can be undamaged, such as not etching a portion of the substrate, which can exacerbate the use of a substrate that is otherwise used in a file device. For example, another chamber may be selected from the group consisting of a processing chamber, another test chamber, a deposition chamber, and a display assembly chamber.

根據一些實施方案，用於檢查用於顯示器製造的大面積之基板的設備能夠為一直線型設備，亦即設備能夠和一先前的測試或處理程序提供在一條線上，並和又一接下來的測試或處理程序提供在一條線上，該設備可能包含一裝載閘，用於在用於以成像式帶電粒子束顯微鏡(例如一SEM)成像的真空室中將基板裝載和卸載。由於帶電粒子束在基板上用於成像的2 keV或更低的低能量，提供在基板上的結構不會受到毀壞。於是，基板能夠被提供用於在顯示器製造廠中另外的處理。如在此所理解的，要被測試的基板的數目，能夠為顯示器製造廠中基板總量的10%到100%。於是，即使用於檢查並包含成像式帶電粒子束顯微鏡的設備能夠被提供為直線型工具，不需要測試在生產線上100%的基板。According to some embodiments, the apparatus for inspecting a large area substrate for display manufacturing can be a linear type device, that is, the device can be provided in a line with a previous test or processing program, and with another subsequent test Or the processing program is provided in a line that may include a loading gate for loading and unloading the substrate in a vacuum chamber for imaging with an imaged charged particle beam microscope (eg, an SEM). The structure provided on the substrate is not destroyed due to the low energy of 2 keV or less for the charged particle beam on the substrate. Thus, the substrate can be provided for additional processing in the display manufacturer. As understood herein, the number of substrates to be tested can range from 10% to 100% of the total substrate in the display manufacturer. Thus, even if the apparatus for inspecting and including the imaged charged particle beam microscope can be provided as a linear type tool, it is not necessary to test a substrate of 100% on the production line.

真空室可包含一或更多的閥，其可將真空室連接至另一腔室，這特別是適用在如果設備為一直線型設備的情況。在基板已被導引到真空室中後，能夠關閉該一或更多的閥。於是，能夠藉由例如以一或更多的真空幫浦產生技術上的真空來控制真空室中的氣氛(atmosphere)。和例如在大氣壓力下相比，在真空室中檢查基板的一項優點，在於真空環境促進使用低能帶電粒子束檢查基板。舉例來說，低能帶電粒子束能夠具有2 keV或更低的著陸能量，特別是1 keV或更低，例如100 eV到800 eV。和高能射束相比，低能射束不會深深地穿過基板中，並從而可提供更多更佳的關於例如基板上之塗層的的資訊。The vacuum chamber may contain one or more valves that connect the vacuum chamber to another chamber, which is particularly useful where the device is a linear device. After the substrate has been introduced into the vacuum chamber, the one or more valves can be closed. Thus, the atmosphere in the vacuum chamber can be controlled by, for example, creating a technical vacuum with one or more vacuum pumps. One advantage of inspecting a substrate in a vacuum chamber compared to, for example, atmospheric pressure is that the vacuum environment facilitates inspection of the substrate using a beam of low energy charged particles. For example, a low energy charged particle beam can have a landing energy of 2 keV or less, especially 1 keV or less, such as 100 eV to 800 eV. Compared to high energy beams, the low energy beam does not penetrate deeply through the substrate and thus provides more and better information about, for example, the coating on the substrate.

基板支撑件提供一基板接收區。術語「基板接收區」，如在此所使用者，能夠包含基板支撑件能夠用於接收基板的最大面積。換言之，基板支撑件可適用於接收具有和基板接收區相同之空間尺寸的一基板，或適用於接收具有一或更多個相比於基板接收區較小的空間尺寸的一基板，因此基板安裝於基板接收區之內。第2圖繪示設備100的一實施例，其中基板支撑件110提供一基板接收區210。在第2圖所繪示的範例性的實施例中，基板接收區210為如虛線所指示的矩形。於是，基板接收區210可適用於接收一具有相同於第2圖所示之基板接收區210的長度和寬度(或較小的長度和寬度)的矩形基板(未示出)。作為一個範例，第3圖示出提供在基板支撑件110上的一矩形基板160，其中第3圖所示的基板160的尺寸係實質上等同於第2圖所示的基板接收區210的尺寸。特別是，第3圖所示的基板160的長度和寬度，係實質上分別相同於第3圖所示的基板接收區210的長度和寬度。換言之，額外地或替代性地，基板具有分別為基板接收區的90%到100%的長度和寬度。The substrate support provides a substrate receiving area. The term "substrate receiving area", as used herein, can include a substrate support that can be used to receive the largest area of the substrate. In other words, the substrate support can be adapted to receive a substrate having the same spatial dimensions as the substrate receiving area, or to receive a substrate having one or more smaller spatial dimensions than the substrate receiving area, thus mounting the substrate Within the substrate receiving area. FIG. 2 illustrates an embodiment of apparatus 100 in which substrate support 110 provides a substrate receiving area 210. In the exemplary embodiment illustrated in FIG. 2, the substrate receiving area 210 is a rectangle as indicated by a broken line. Thus, the substrate receiving area 210 can be adapted to receive a rectangular substrate (not shown) having the same length and width (or smaller length and width) than the substrate receiving area 210 shown in FIG. As an example, FIG. 3 shows a rectangular substrate 160 provided on the substrate support 110, wherein the size of the substrate 160 shown in FIG. 3 is substantially equivalent to the size of the substrate receiving area 210 shown in FIG. . In particular, the length and width of the substrate 160 shown in FIG. 3 are substantially the same as the length and width of the substrate receiving region 210 shown in FIG. In other words, additionally or alternatively, the substrate has a length and a width of 90% to 100%, respectively, of the substrate receiving area.

基板接收區具有沿著一第一方向的一第一接收區尺寸。關於在此所述的圖式，第一方向可意指x方向150。第一方向可平行於基板支撑件。基板支撑件可被沿著第一方向位移。基板接收區的第一接收區尺寸，可包含基板接收區沿著第一方向的一範圍、寬度、長度、或直徑。替代性地或額外地，第一接收區尺寸可意指能夠被基板支撑件所接收之基板沿著第一方向的最大寬度。舉例來說，請參照第2圖所示的設備，基板接收區沿著第一方向的第一接收區尺寸，可意指基板接收區210沿著x方向150的寬度220。寬度220可對應至能夠被基板支撑件110所接收之基板沿著x方向150的最大寬度。作為一個範例，第3圖所示的基板160具有沿著x方向150的一基板寬度810，其中基板寬度810係實質上相同於第2圖所示的基板接收區210的寬度220。The substrate receiving area has a first receiving area size along a first direction. With respect to the figures described herein, the first direction may mean the x direction 150. The first direction can be parallel to the substrate support. The substrate support can be displaced along the first direction. The first receiving area size of the substrate receiving area may include a range, width, length, or diameter of the substrate receiving area along the first direction. Alternatively or additionally, the first receiving zone size may mean the maximum width of the substrate that can be received by the substrate support along the first direction. For example, referring to the apparatus shown in FIG. 2, the first receiving area size of the substrate receiving area along the first direction may mean the width 220 of the substrate receiving area 210 along the x direction 150. The width 220 may correspond to a maximum width of the substrate that can be received by the substrate support 110 along the x-direction 150. As an example, the substrate 160 shown in FIG. 3 has a substrate width 810 along the x-direction 150, wherein the substrate width 810 is substantially the same as the width 220 of the substrate receiving region 210 shown in FIG.

第一成像式帶電粒子束顯微鏡和第二成像式帶電粒子束顯微鏡沿著第一方向具有一距離，該距離在基板接收區的第一接收區尺寸的30%到70%的範圍內。沿著第一方向的該距離更特別是可落在第一接收區尺寸的40%到60%的範圍內，例如第一接收區尺寸的約50%。舉例來說，請參照第2圖所繪示的實施例，沿著第一方向的該距離可意指第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140之間的距離135。在第2圖所繪示的範例性的實施例中，距離135約為基板接收區210的寬度220的50%。The first imaged charged particle beam microscope and the second imaged charged particle beam microscope have a distance along the first direction that is in the range of 30% to 70% of the size of the first receiving region of the substrate receiving region. This distance along the first direction may more particularly fall within the range of 40% to 60% of the size of the first receiving zone, such as about 50% of the size of the first receiving zone. For example, referring to the embodiment illustrated in FIG. 2, the distance along the first direction may mean the distance between the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140. 135. In the exemplary embodiment depicted in FIG. 2, the distance 135 is approximately 50% of the width 220 of the substrate receiving area 210.

沿著第一方向的該距離可為從第一成像式帶電粒子束顯微鏡之一中心到第二成像式帶電粒子束顯微鏡之一中心的距離。第一成像式帶電粒子束顯微鏡可定義一第一光軸，而第二成像式帶電粒子束顯微鏡可定義一第二光軸。額外地或替代性地，沿著第一方向的該距離可為第一光軸和第二光軸之間的距離。第一光軸可平行於第二光軸。第一光軸和/或第二光軸可垂直於第一方向和/或基板支撑件。The distance along the first direction may be the distance from one of the centers of the first imaged charged particle beam microscope to one of the centers of the second imaged charged particle beam microscope. The first imaging charged particle beam microscope can define a first optical axis, and the second imaging charged particle beam microscope can define a second optical axis. Additionally or alternatively, the distance along the first direction may be the distance between the first optical axis and the second optical axis. The first optical axis can be parallel to the second optical axis. The first optical axis and/or the second optical axis may be perpendicular to the first direction and/or the substrate support.

基板支撑件可在真空室中，相對於第一成像式帶電粒子束顯微鏡和/或相對於第二成像式帶電粒子束顯微鏡為可移動的。根據能夠和在此所述之其他實施例結合的實施例，第二成像式帶電粒子束顯微鏡係從第一成像式帶電粒子束顯微鏡相距至少30公分的一距離，更特別是至少40公分的一距離，例如第一接收區尺寸的約50%。第一成像式帶電粒子束顯微鏡和第二成像式帶電粒子束顯微鏡之間具有最小距離，亦即大於只是冗餘地重複二個相次的成像式帶電粒子束顯微鏡(例如二個SEM)的一距離，其一項優點在於由設備所檢查之基板的行進距離係減少。這允許減少真空室的尺寸，因此真空室的震動也能夠有利地減少。The substrate support can be movable in the vacuum chamber relative to the first imaged charged particle beam microscope and/or relative to the second imaged charged particle beam microscope. According to an embodiment capable of being combined with other embodiments described herein, the second imaged charged particle beam microscope is at least a distance of at least 30 cm from the first imaged charged particle beam microscope, more particularly at least 40 cm. The distance, for example, is about 50% of the size of the first receiving area. A minimum distance between the first imaged charged particle beam microscope and the second imaged charged particle beam microscope, that is, greater than one of the imaged charged particle beam microscopes (eg, two SEMs) that are redundantly repeating only two phases One advantage of the distance is that the distance traveled by the substrate inspected by the device is reduced. This allows the size of the vacuum chamber to be reduced, so that the vibration of the vacuum chamber can also be advantageously reduced.

一真空室的尺寸減少的方面，對於大面積之基板和/或用於顯示器製造之基板而言是特別感興趣的。根據一些能夠和在此所述之其他實施例結合的實施例，大面積之基板或如本揭露書所述的基板接收區，可具有至少1.375平方公尺的一尺寸。該尺寸可從約1.375平方公尺(1100公釐´1250公釐，第5代)到約9平方公尺，尤其是從約2平方公尺到約9平方公尺或甚至高達12平方公尺。根據在此所述的實施例的結構、設備、和方法為其所提供的所謂基板或基板接收區，能夠是如在此所述的大面積之基板。舉例而言，大面積之基板或載具能夠為對應至約1.375平方公尺之基板(1.1公尺×1.25公尺)的第5代、對應至約4.39平方公尺之基板(1.95公尺×2.25公尺)的第7.5代、對應至約5.7平方公尺之基板(2.2公尺×2.5公尺)的第8.5代、或甚至對應至約9平方公尺之基板(2.88公尺×3.130公尺)的第10代。更晚的世代如第11代和第12代及對應的基板面積，能夠以類似的方式實施。基板尺寸世代被認為是提供固定的工業標準，即使一個第5代基板從一個顯示器製造商到另一個顯示器製造商可能會有些微的尺寸偏差。用於測試的設備的實施例，可例如具有一第5代基板支撑件或第5代基板接收區，使得許多顯示器製造商第5代基板可為可由支撑件所支撐的。相同的應用適用於其他基板尺寸世代。The reduction in size of a vacuum chamber is of particular interest for large area substrates and/or substrates for display fabrication. In accordance with some embodiments that can be combined with other embodiments described herein, a large area substrate or substrate receiving area as described in the present disclosure can have a size of at least 1.375 square meters. The size can range from about 1.375 square meters (1100 mm ́1250 mm, 5th generation) to about 9 square meters, especially from about 2 square meters to about 9 square meters or even up to 12 square meters. . The so-called substrate or substrate receiving region provided therefor according to the structures, devices, and methods of the embodiments described herein can be a large-area substrate as described herein. For example, a large area substrate or carrier can be a 5th generation substrate corresponding to a substrate of approximately 1.375 square meters (1.1 meters x 1.25 meters), corresponding to a substrate of approximately 4.39 square meters (1.95 meters x 7.5th generation of 2.25 meters), 8.5th generation corresponding to substrate of 5.7 square meters (2.2 meters × 2.5 meters), or even corresponding to substrate of about 9 square meters (2.88 meters × 3.130 mm) The 10th generation of the ruler). Later generations such as the 11th and 12th generations and corresponding substrate areas can be implemented in a similar manner. Substrate size generation is believed to provide a fixed industry standard, even though a 5th generation substrate may vary slightly from one display manufacturer to another. Embodiments of the apparatus for testing may, for example, have a 5th generation substrate support or a 5th generation substrate receiving area such that many display manufacturers' 5th generation substrates may be supported by the support. The same application is suitable for other substrate size generations.

鑑於大面積之基板的尺寸，根據能夠和在此所述之其他實施例結合的實施例，真空室具有沿著第一方向的一最大第一內部尺寸，亦即，第一內部尺寸係受到限制。舉例來說，關於第2圖，第一內部尺寸可意指真空室120沿著x方向150的內寬121。第一內部尺寸可包含以下至少一者：沿著第一方向從真空室的一第一牆壁到真空室的一第二牆壁的一距離；真空室沿著第一方向的一內部部分的一尺寸；真空室沿著第一方向的一寬度、長度或寬度。真空室的第一內部尺寸可落在沿著第一方向的第一成像式帶電粒子束顯微鏡和第二成像式帶電粒子束顯微鏡之間的成像式帶電粒子束顯微鏡的距離的250%到600%的範圍內，更特別是落在260%到370%的範圍內。替代性地或額外地，真空室的第一內部尺寸可落在基板接收區的第一接收區尺寸的130%到180%的範圍內，更特別是第一接收區尺寸的140%到170%，又更特別是150%到160%。In view of the size of a large area substrate, the vacuum chamber has a maximum first internal dimension along the first direction, i.e., the first internal dimension is limited, according to embodiments that can be combined with other embodiments described herein. . For example, with respect to FIG. 2, the first internal dimension may refer to the inner width 121 of the vacuum chamber 120 along the x-direction 150. The first internal dimension may comprise at least one of: a distance from a first wall of the vacuum chamber to a second wall of the vacuum chamber along the first direction; a dimension of an interior portion of the vacuum chamber along the first direction a width, length or width of the vacuum chamber along the first direction. The first internal dimension of the vacuum chamber may fall between 250% and 600% of the distance of the imaged charged particle beam microscope between the first imaged charged particle beam microscope and the second imaged charged particle beam microscope along the first direction Within the scope, more specifically falls within the range of 260% to 370%. Alternatively or additionally, the first internal dimension of the vacuum chamber may fall within the range of 130% to 180% of the size of the first receiving area of the substrate receiving area, more particularly 140% to 170% of the size of the first receiving area And more specifically 150% to 160%.

第一成像式帶電粒子束顯微鏡和/或第二成像式帶電粒子束顯微鏡可被配置成沿著垂直於基板支撑件的一方向和/或垂直於第一方向。舉例來說，在第4圖所示的設備中，第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140沿著z方向151延伸，亦即垂直於x方向150和y方向152，其中x-y平面係平行於基板支撑件110。替代性地，第一成像式帶電粒子束顯微鏡和/或第二成像式帶電粒子束顯微鏡可相對於基板支撑件和/或第一方向被傾斜。第一成像式帶電粒子束顯微鏡和/或第二成像式帶電粒子束顯微鏡可沿著和第一方向形成一角度的一方向延伸，其中該角度係不同於90度。特別是，該角度可落在60到90度的範圍內，更特別是75到90度。根據又另外的能夠和在此所述之其他實施例結合的實施例，成像式帶電粒子束顯微鏡的柱筒可被配置成垂直於基板支撑件，且成像式帶電粒子束顯微鏡光學可被配置成用以傾斜帶電粒子束，例如是傾斜高達20°的一角度。具有相對於基板表面法線傾斜的一帶電粒子束，能夠被用於表面形貌成像、或甚至高解析度(亦即10奈米或更小之一解析度)的3D影像。傾斜帶電粒子束的另外的細節，能夠參照第5B和5C圖而被理解。The first imaged charged particle beam microscope and/or the second imaged charged particle beam microscope can be configured to be along a direction perpendicular to the substrate support and/or perpendicular to the first direction. For example, in the apparatus shown in FIG. 4, the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140 extend along the z direction 151, that is, perpendicular to the x direction 150 and y directions. 152, wherein the xy plane is parallel to the substrate support 110. Alternatively, the first imaged charged particle beam microscope and/or the second imaged charged particle beam microscope may be tilted relative to the substrate support and/or the first direction. The first imaged charged particle beam microscope and/or the second imaged charged particle beam microscope may extend in a direction that forms an angle with the first direction, wherein the angle is different from 90 degrees. In particular, the angle may fall within the range of 60 to 90 degrees, more particularly 75 to 90 degrees. According to still further embodiments capable of being combined with other embodiments described herein, the cartridge of the imaged charged particle beam microscope can be configured to be perpendicular to the substrate support, and the imaged charged particle beam microscope optics can be configured to Used to tilt a charged particle beam, for example, at an angle of up to 20°. A charged particle beam having a normal to the surface of the substrate can be used for 3D images of surface topography, or even high resolution (i.e., one resolution of 10 nm or less). Additional details of the oblique charged particle beam can be understood with reference to Figures 5B and 5C.

第4圖示出根據在此所述的實施例的用於檢查基板之一設備的側視圖。該設備包含一位移單元410。位移單元41係適用於沿著一第一方向位移基板支撑件，例如沿著x方向150，以將基板支撑件110置放在第一成像式帶電粒子束顯微鏡130下方和/或第二成像式帶電粒子束顯微鏡140下方。位移單元410可適用於將基板支撑件110沿著x方向150前後(亦即朝著第4圖中的右方和朝著第4圖中的左方)移動。根據能夠和在此所述之其他實施例結合的實施例，在此所述的設備另外包含一位移單元，比如例如第4圖所示的位移單元410。該位移單元可適用於沿著第一方向位移基板支撑件。位移單元410可例如包含多個線性致動器(未示出)，基板支撑件110係置基在該些線性致動器上。替代性地或額外地，位移單元可例如包含一磁性導引系統(未示出)，用於沿著x方向150導引基板支撑件110。在第4圖所示的示意圖式中，位移單元410係配置在真空室120中。替代性地，部分的位移單元410可延伸到真空室120外，這特別是適用在如果設備100係耦接至一裝載室或一直線型設備的情況。延伸到真空室120外的一位移單元410可適用於將基板支撑件110運輸到真空室120之中和之外。舉例來說，位移單元410可在真空室120的右手側和在真空室120的左手側延伸到真空室120外。於是，基板支撑件110可例如從左側由位移單元410移動到真空室120中，並可由位移單元410移動出真空室120到右側。Figure 4 illustrates a side view of one of the devices for inspecting a substrate in accordance with embodiments described herein. The device includes a displacement unit 410. The displacement unit 41 is adapted to displace the substrate support along a first direction, such as along the x-direction 150, to place the substrate support 110 under the first imaged charged particle beam microscope 130 and/or the second imaging The charged particle beam microscope 140 is below. The displacement unit 410 can be adapted to move the substrate support 110 back and forth along the x-direction 150 (ie, toward the right in FIG. 4 and to the left in FIG. 4). In accordance with an embodiment that can be combined with other embodiments described herein, the apparatus described herein additionally includes a displacement unit, such as displacement unit 410, such as shown in FIG. The displacement unit can be adapted to displace the substrate support in a first direction. The displacement unit 410 can, for example, comprise a plurality of linear actuators (not shown) on which the substrate support 110 is attached. Alternatively or additionally, the displacement unit may, for example, comprise a magnetic guiding system (not shown) for guiding the substrate support 110 along the x-direction 150. In the schematic diagram shown in FIG. 4, the displacement unit 410 is disposed in the vacuum chamber 120. Alternatively, a portion of the displacement unit 410 can extend beyond the vacuum chamber 120, which is particularly useful where the device 100 is coupled to a load chamber or a linear device. A displacement unit 410 extending outside of the vacuum chamber 120 can be adapted to transport the substrate support 110 into and out of the vacuum chamber 120. For example, the displacement unit 410 can extend outside the vacuum chamber 120 on the right hand side of the vacuum chamber 120 and on the left hand side of the vacuum chamber 120. Thus, the substrate support 110 can be moved from the displacement unit 410 into the vacuum chamber 120, for example, from the left side, and can be moved out of the vacuum chamber 120 to the right side by the displacement unit 410.

位移單元可適用於沿著第一方向，將基板支撑件從靠近真空室之一第一端或牆壁的位置，位移到靠近真空室之一第二端或牆壁的位置。位移單元可具有沿著第一方向的一位移範圍，其中位移單元可適用於將基板支撑件位移到任何在該位移範圍內的目標座標。The displacement unit can be adapted to displace the substrate support from a position near one of the first ends or walls of the vacuum chamber to a position near one of the second ends or walls of the vacuum chamber along the first direction. The displacement unit can have a range of displacement along the first direction, wherein the displacement unit can be adapted to displace the substrate support to any target coordinate within the range of displacement.

第4圖所示的設備可另外包含另一位移單元(未示出)，適用於將基板支撑件110沿著y方向152位移到真空室120中。位移單元410和該另一位移單元可形成一共同位移系統，適用於在一x-y平面移動基板支撑件110。於是，藉由在x-y平面適當地位移夾持基板的基板支撑件110，設置在基板支撑件110上之基板的任一區，可被置於第一成像式帶電粒子束顯微鏡130下方或第二成像式帶電粒子束顯微鏡140下方，以進行目標物部分的檢查。基板支撑件可被固定到該另一位移單元上、或被固定到由所述位移單元和該另一位移單元所形成的一共同位移系統上。該另一位移單元可適用於相對於第一成像式帶電粒子束顯微鏡和/或相對於第二成像式帶電粒子束顯微鏡位移基板支撑件。該另一位移單元可具有沿著第一方向的一位移範圍，其中該位移範圍可落在基板寬度或基板接收區的各別寬度的150%到180%的範圍內。The apparatus shown in FIG. 4 may additionally include another displacement unit (not shown) adapted to displace the substrate support 110 in the y-direction 152 into the vacuum chamber 120. The displacement unit 410 and the other displacement unit can form a common displacement system adapted to move the substrate support 110 in an x-y plane. Thus, any region of the substrate disposed on the substrate support 110 can be placed under the first imaged charged particle beam microscope 130 or second by appropriately displacing the substrate support 110 of the substrate in the xy plane. Below the imaged charged particle beam microscope 140, an inspection of the target portion is performed. The substrate support may be fixed to the other displacement unit or to a common displacement system formed by the displacement unit and the other displacement unit. The further displacement unit can be adapted to displace the substrate support relative to the first imaged charged particle beam microscope and/or to the second imaged charged particle beam microscope. The other displacement unit may have a range of displacement along the first direction, wherein the range of displacement may fall within a range of 150% to 180% of the substrate width or the respective width of the substrate receiving area.

沿著第一方向的位移範圍可根據一些實施例大於沿著第一方向的基板接收區的距離。鑑於根據一些實施例，也能夠提供一或更多的目標物在基板支撑件上，其中該一或更多的目標物能夠被置於成像式帶電粒子束顯微鏡(例如一SEM)的帶電粒子束下方的事實，這可能是有利的。舉例來說，能夠提供一節距目標物(pitch target)，其中能夠藉由以例如SEM使該目標物成像而被看見的，具有一定義的節距。於是，SEM能夠被校正，使得影像中的節距對應至目標物的真實節距。作為另一個範例，能夠提供一法拉第杯(Faraday cup)在基板支撑件上，使得該法拉第杯能夠被提供在帶電粒子束下方，以量測射束的電流。作為又一個範例，能夠提供一階狀目標物(step target)，其具有定義的不同高度的複數結構。一階狀目標物能夠被用於表徵為了成像而掃描於基板上方的探針的聚焦位置。The range of displacement along the first direction may be greater than the distance of the substrate receiving area along the first direction according to some embodiments. In view of the above, it is also possible to provide one or more targets on a substrate support, wherein the one or more targets can be placed in a charged particle beam of an imaged charged particle beam microscope (eg, an SEM). Below the facts, this may be beneficial. For example, a pitch target can be provided in which a defined pitch can be seen by imaging the object with, for example, an SEM. Thus, the SEM can be corrected such that the pitch in the image corresponds to the true pitch of the target. As another example, a Faraday cup can be provided on the substrate support such that the Faraday cup can be provided below the charged particle beam to measure the current of the beam. As yet another example, a step target can be provided that has a defined complex structure of different heights. The first order target can be used to characterize the focus position of the probe scanned over the substrate for imaging.

又另外，一位移系統可另外包含一z平台，用於沿著一z方向位移基板支撑件，亦即改變基板支撑件相對於一或更多的成像式帶電粒子束顯微鏡的距離。z平台允許將基板置於正確的工作距離，以藉由一成像式帶電粒子束顯微鏡成像。舉例來說，z平台能夠藉由二個在彼此上方滑移的楔形體來提供，其中高度係由楔形體重疊的量所改變。以包含二個楔形體的一z平台來改變z位置，允許基板以在系統中減少震動產生的方式來進行z定位。Still further, a displacement system can additionally include a z-platform for displacing the substrate support in a z-direction, i.e., changing the distance of the substrate support relative to one or more imaged charged particle beam microscopes. The z-platform allows the substrate to be placed at the correct working distance for imaging by an imaged charged particle beam microscope. For example, the z-platform can be provided by two wedges that slide over each other, with the height being varied by the amount by which the wedges overlap. Changing the z-position with a z-platform containing two wedges allows the substrate to be positioned in a manner that reduces vibration generation in the system.

第4圖所示的設備100另外包含一真空幫浦420，適用於在真空室120中產生真空。真空幫浦420係流體上地經由連接部430耦接至真空室120，連接部430例如是一導管，其中連接部430連接真空幫浦420和真空室。經由連接部430，真空幫浦420可使真空室真空。於是，10-1 毫巴或更低的壓力可提供在真空室中。在操作期間，真空幫浦42可能震動。經由安裝在真空幫浦420和真空室120的連接部430，真空幫浦420的機械震動可能被傳遞到真空室120。於是，不想要的震動可能傳遞到真空室120和/或傳遞到位在基板支撑件110上的一基板(未示出)。為了抑制(dampen)真空幫浦420的震動，一減震器431係包含在設備100中，更特別是在連接部430中。如圖所示，減震器431係經由一第一聯結器432耦接至真空幫浦420，並經由一第二聯結器433耦接至真空室120。真空幫浦420的機械震動，在機械震動能夠被傳遞到真空室120之前，可被減震器431所抑制。於是，和不包含一減震器431的設備相比，減少的震動量係傳遞到真空室120。根據一些能夠和在此所述之其他實施例結合的實施例，用於顯示器檢查的一設備可包含一減震器，適用於抑制真空室由真空產生裝置所產生的震動，特別是機械震動。真空產生裝置可為如在此所述的一真空幫浦。The apparatus 100 shown in FIG. 4 additionally includes a vacuum pump 420 adapted to create a vacuum in the vacuum chamber 120. The vacuum pump 420 is fluidly coupled to the vacuum chamber 120 via a connection portion 430, such as a conduit, wherein the connection portion 430 connects the vacuum pump 420 and the vacuum chamber. The vacuum pump 420 can vacuum the vacuum chamber via the connection portion 430. Thus, a pressure of 10 -1 mbar or less can be provided in the vacuum chamber. The vacuum pump 42 may vibrate during operation. Mechanical vibration of the vacuum pump 420 may be transmitted to the vacuum chamber 120 via the connection portion 430 installed at the vacuum pump 420 and the vacuum chamber 120. Thus, unwanted vibrations may be transmitted to the vacuum chamber 120 and/or to a substrate (not shown) located on the substrate support 110. In order to dampen the vibration of the vacuum pump 420, a damper 431 is included in the apparatus 100, more particularly in the connection portion 430. As shown, the damper 431 is coupled to the vacuum pump 420 via a first coupler 432 and to the vacuum chamber 120 via a second coupler 433. The mechanical shock of the vacuum pump 420 can be suppressed by the damper 431 before the mechanical shock can be transmitted to the vacuum chamber 120. Thus, the reduced amount of vibration is transmitted to the vacuum chamber 120 as compared to a device that does not include a damper 431. In accordance with some embodiments that can be combined with other embodiments described herein, an apparatus for display inspection can include a shock absorber adapted to inhibit vibrations, particularly mechanical shock, generated by the vacuum generating device of the vacuum chamber. The vacuum generating device can be a vacuum pump as described herein.

第4圖所示的設備100可包含另外的真空幫浦(未示出)，例如連接至第一成像式帶電粒子束顯微鏡和/或第二成像式帶電粒子束顯微鏡的一或更多個另外的真空幫浦。對於任何這類另外的真空幫浦而言，相關的另一減震器可被包含在設備中。另一真空減震器的功能，係類似於如在此所述的真空減震器431的功能。The apparatus 100 shown in FIG. 4 may include an additional vacuum pump (not shown), such as one or more additional connected to the first imaged charged particle beam microscope and/or the second imaged charged particle beam microscope. Vacuum pump. For any such additional vacuum pump, another associated shock absorber can be included in the device. The function of the other vacuum damper is similar to the function of the vacuum damper 431 as described herein.

第4圖所示的真空室120係固定在氣動元件(pneumatic element)440上，氣動元件440適用於以氣動方式減少真空室120的震動。在第4圖所繪示的範例性的實施例中，真空室120係固定在支腳441上，因此真空室120係位在地面之上的一抬升位置。如圖所示，真空室120的各個支腳包含一氣動元件。根據在此所述的實施例的一氣動元件，能夠適用於以氣動方式抑制引入到真空室的震動。根據又另外的能夠和在此所述之其他實施例結合的實施例，額外於或替代於氣動元件，聚合物元件或橡膠元件也可被用於減少震動，例如是藉由將真空室120或支腳441支撐在一或更多的聚合物元件或一或更多的橡膠元件上。The vacuum chamber 120 shown in Fig. 4 is attached to a pneumatic element 440 which is adapted to pneumatically reduce the vibration of the vacuum chamber 120. In the exemplary embodiment illustrated in FIG. 4, the vacuum chamber 120 is secured to the leg 441 such that the vacuum chamber 120 is in a raised position above the ground. As shown, each leg of vacuum chamber 120 includes a pneumatic component. A pneumatic component according to the embodiments described herein can be adapted to pneumatically suppress shock introduced into the vacuum chamber. In accordance with yet another embodiment that can be combined with other embodiments described herein, in addition to or in lieu of a pneumatic element, a polymeric element or rubber element can also be used to reduce vibration, such as by vacuum chamber 120 or The legs 441 support one or more polymeric elements or one or more rubber elements.

一氣動元件，如在此所述者，可包含含有加壓空氣或加壓氣體的一隔室。外部震動，比如例如地面的震動，可能被傳遞到支腳441。在外部震動能夠被傳遞到真空室120之前，外部震動可由氣動元件440所吸收，特別是由加壓空氣或氣體所吸收。於是，氣動元件440可將真空室120從外部震動隔絕，或至少可減少外部震動被傳遞到真空室120的量。A pneumatic component, as described herein, can comprise a compartment containing pressurized air or pressurized gas. External vibrations, such as, for example, ground vibrations, may be transmitted to the feet 441. Before an external shock can be transmitted to the vacuum chamber 120, the external shock can be absorbed by the pneumatic element 440, particularly by pressurized air or gas. Thus, the pneumatic element 440 can isolate the vacuum chamber 120 from external shocks, or at least reduce the amount of external shock transmitted to the vacuum chamber 120.

在第4圖的側視圖中，係示出二個支腳441和二個相關的氣動元件440。設備100可具有可能無法在第4圖的側視圖中看到的另外的支腳和/或另外的氣動元件。舉例來說，設備100可被固定在四個支腳上，並可具有四個氣動元件，其中各支腳係固定在一氣動元件上。In the side view of Fig. 4, two legs 441 and two associated pneumatic elements 440 are shown. The device 100 may have additional legs and/or additional pneumatic elements that may not be visible in the side view of Figure 4. For example, device 100 can be secured to four legs and can have four pneumatic components, with each leg being attached to a pneumatic component.

第4圖另外示出一震動感測器450，適用於量測真空室120的震動。舉例來說，震動感測器可適用於量測真空室120的震動的振幅和/或頻率。震動感測器450可另外適用於量測在一或更多個方向的震動。震動感測器450可包含一光源(未示出)，適用於產生一光束。該光束可被導向到真空室120上，例如到真空室120的一牆壁上，其中至少部分的光束可被從真空室反射。震動感測器450可另外包含一探測器(未示出)，用於在光束從真空室120被反射後探測該光束。於是，關於真空室120的震動的資訊，可由震動感測器450所收集。震動感測器可為一干涉計。FIG. 4 additionally shows a shock sensor 450 adapted to measure the vibration of the vacuum chamber 120. For example, the shock sensor can be adapted to measure the amplitude and/or frequency of the shock of the vacuum chamber 120. The shock sensor 450 can additionally be adapted to measure vibration in one or more directions. The shock sensor 450 can include a light source (not shown) adapted to generate a light beam. The beam can be directed onto the vacuum chamber 120, for example to a wall of the vacuum chamber 120, wherein at least a portion of the beam can be reflected from the vacuum chamber. The shock sensor 450 can additionally include a detector (not shown) for detecting the beam after it is reflected from the vacuum chamber 120. Thus, information about the vibration of the vacuum chamber 120 can be collected by the vibration sensor 450. The shock sensor can be an interferometer.

根據一些實施例，震動感測器係配置成用於量測影響成像式帶電粒子束顯微鏡和基板支撑件之間相對位置的震動。如第4圖所示，鑑於產生在真空室之相對大的振幅，量測可在真空室進行。根據又另外的或額外的實施方案，一震動感測器，例如一干涉計或一壓電震動感測器，能夠被固定在基板支撑件以量測成像式帶電粒子束顯微鏡的相對位置(和位置變化)，或可被固定在成像式帶電粒子束顯微鏡以量測基板支撑件的相對位置(和位置變化)。干涉計可包含固定在成像式帶電粒子束顯微鏡的一第一反射鏡、和固定在基板支撑件上的一第二反射鏡。有關於二個反射鏡的量測，可被用於計算成像式帶電粒子束顯微鏡(例如一SEM)和基板支撑件(亦即平台)的相對運動。干涉可提供關於基板相對於第一成像式帶電粒子束顯微鏡之震動的資訊。指示相對運動(震動)的訊號可被用於包含在成像式帶電粒子束顯微鏡中之一掃描致偏器(scanning deflector)的一控制器，以補償相對運動。According to some embodiments, the shock sensor is configured to measure vibrations that affect the relative position between the imaged charged particle beam microscope and the substrate support. As shown in Fig. 4, the measurement can be performed in a vacuum chamber in view of the relatively large amplitude generated in the vacuum chamber. According to still further or additional embodiments, a shock sensor, such as an interferometer or a piezoelectric vibration sensor, can be secured to the substrate support to measure the relative position of the imaged charged particle beam microscope (and The positional change), or can be fixed to an imaged charged particle beam microscope to measure the relative position (and positional change) of the substrate support. The interferometer can include a first mirror fixed to the imaged charged particle beam microscope and a second mirror fixed to the substrate support. The measurement of the two mirrors can be used to calculate the relative motion of an imaged charged particle beam microscope (eg, an SEM) and a substrate support (ie, a platform). Interference can provide information about the vibration of the substrate relative to the first imaged charged particle beam microscope. A signal indicative of relative motion (vibration) can be used for a controller included in one of the scanning deflectors of the imaged charged particle beam microscope to compensate for relative motion.

根據其他實施例，震動感測器可固定在第一成像式帶電粒子束顯微鏡和/或固定在第二成像式帶電粒子束顯微鏡，其中震動感測器可適用於量測第一成像式帶電粒子束顯微鏡和/或第二成像式帶電粒子束顯微鏡的震動。舉例來說，震動感測器可為一壓電震動感測器、一加速度感測器、或類似者。According to other embodiments, the shock sensor can be fixed to the first imaged charged particle beam microscope and/or to the second imaged charged particle beam microscope, wherein the vibration sensor can be adapted to measure the first imaged charged particle Vibration of a beam microscope and/or a second imaging charged particle beam microscope. For example, the vibration sensor can be a piezoelectric vibration sensor, an acceleration sensor, or the like.

由震動感測器450所收集的、關於成像式帶電粒子束顯微鏡和基板支撑件之間相對位置和/或真空室120震動的資料，可被傳遞至一控制單元(未示出)。使用由震動感測器450所收集的資料，控制單元可控制設備100。特別是，使用由震動感測器450所收集的資料，控制單元可控制第一成像式帶電粒子束顯微鏡130、第二成像式帶電粒子束顯微鏡140、位移單元410、或其他包含在設備100中的元件，以例如在如果震動感測器450指示真空室範圍的震動超過預定限度的情況下，暫時地停止基板的檢查。又再額外地或替代性地，相對位置的量測可被用於以從相對位置的量測所形成的一正確校正係數來校正影像。Information collected by the shock sensor 450 regarding the relative position between the imaged charged particle beam microscope and the substrate support and/or the vibration of the vacuum chamber 120 can be communicated to a control unit (not shown). Using the data collected by the vibration sensor 450, the control unit can control the device 100. In particular, using the data collected by the shock sensor 450, the control unit can control the first imaged charged particle beam microscope 130, the second imaged charged particle beam microscope 140, the displacement unit 410, or other included in the device 100. The component temporarily stops the inspection of the substrate, for example, if the vibration sensor 450 indicates that the vibration of the vacuum chamber range exceeds a predetermined limit. Still additionally or alternatively, the measurement of the relative position can be used to correct the image with a correct correction factor formed from the measurement of the relative position.

第4圖所示的設備100可另外包含一隔音屏障，適用於將真空室120從聲音的震動和/或噪音屏蔽。The apparatus 100 shown in Fig. 4 may additionally include a noise barrier adapted to shield the vacuum chamber 120 from vibrations and/or noise of sound.

第4圖所示的設備另外示出配置在真空室120中的強化條(reinforcement bar)470。在第4圖所示的範例性的實施例中，係示出二個強化條470，其中強化條470可沿著z方向151延伸。根據其他實施例，設備100可包含另外的強化條或其他強化結構，特別是三、四、六、八、或更多的強化條。強化條470可為剛性的條、樑(beam)或柱，其可由選自由下列選項所組成之群組的一或更多種材料製成：碳鋼、礦物鑄件(mineral casting)、或任何其他具有良好的阻尼特性(damping properties)以抑制震動的材料，其可能已被引入到真空室。強化條470係適用於結構性地強化真空室120以減少真空室120的震動。又另外，強化條可額外地或替代性地也被提供在真空室外側或真空室外側上。強化條可被用於增加真空室的剛性(stiffness)。於是，產生在真空室的震動，基於真空室增加的剛性而造成較小的震動的振幅。The apparatus shown in FIG. 4 additionally shows a reinforcement bar 470 disposed in the vacuum chamber 120. In the exemplary embodiment shown in FIG. 4, two reinforcing strips 470 are shown, wherein the reinforcing strips 470 can extend along the z-direction 151. According to other embodiments, device 100 may include additional reinforcing strips or other reinforcing structures, particularly three, four, six, eight, or more reinforcing strips. Reinforcing strip 470 can be a rigid strip, beam or post that can be made of one or more materials selected from the group consisting of carbon steel, mineral casting, or any other A material that has good damping properties to suppress vibration, which may have been introduced into the vacuum chamber. The reinforcing strip 470 is adapted to structurally strengthen the vacuum chamber 120 to reduce vibration of the vacuum chamber 120. Still further, the reinforcing strips may additionally or alternatively be provided on the outside of the vacuum chamber or on the outside of the vacuum chamber. Reinforcing strips can be used to increase the stiffness of the vacuum chamber. Thus, the vibration in the vacuum chamber is generated, resulting in a small amplitude of vibration based on the increased rigidity of the vacuum chamber.

根據在此所述的實施例，可引入各種用於屏蔽或減少產生在真空室或真空室所產生的震動的元件。根據其他實施例，額外地或替代性地，可提供已被引入的用於抑制震動的元件。關於以上參照第4圖所敘述的範例性實施例，設備100包含數個用於減少真空室震動的元件的組合，比如例如強化條470、隔音屏障、氣動元件440、和減震器431。為了達到減少震動產生和/或抑制真空室的震動的效果，一或更多的前述元件可被包含在同一設備100中。一減少震動的效果，也可由包含到設備100中的任何選自前述元件組合的單一元件、或更通常是任何選自前述元件組合的次組合所提供。In accordance with the embodiments described herein, various elements for shielding or reducing vibrations generated in a vacuum chamber or vacuum chamber can be introduced. Additionally or alternatively, elements that have been introduced for suppressing vibration may be provided in accordance with other embodiments. With regard to the exemplary embodiment described above with reference to FIG. 4, apparatus 100 includes a plurality of combinations of elements for reducing vibration of the vacuum chamber, such as, for example, reinforcing strips 470, noise barriers, pneumatic elements 440, and shock absorbers 431. In order to achieve the effect of reducing vibration generation and/or suppressing vibration of the vacuum chamber, one or more of the foregoing elements may be included in the same device 100. A reduced vibration effect may also be provided by any single element selected from the foregoing combination of elements included in device 100, or more generally any sub-combination selected from the foregoing combination of elements.

根據又另外的能夠和在此所述之其他實施例結合的實施例，設備，且特別是用於檢查顯示器的設備的真空室，可另外包含包括選自由下列選項所組成之群組的至少一種材料的一或更多種材料或由其製成：鑄鐵、礦物鑄件、或另一具有良好的阻尼特性的材料。According to still further embodiments capable of being combined with other embodiments described herein, the apparatus, and in particular the vacuum chamber of the apparatus for inspecting the display, may additionally comprise at least one selected from the group consisting of the following options One or more materials of the material are made of: cast iron, mineral castings, or another material having good damping properties.

如在本揭露書中所述者，存在著各種用於抑制震動、減少震動、感測震動、或補償震動的元件。舉例來說，係敘述提供在真空產生裝置和真空室之間的連接部或該連接部中的一減震器、複數強化條、一或更多的氣動元件、一隔音屏障、和可被耦接到成像式帶電粒子束顯微鏡之一掃描致偏器的一震動感測器。根據在此所述的實施例，如在此所述的震動抑制元件、震動減少元件、震動感測元件、或震動補償元件的至少一者，能夠被包含在用於測試一大面積之基板的系統。As described in the present disclosure, there are various components for suppressing vibration, reducing vibration, sensing vibration, or compensating for vibration. For example, it is provided that a connection between the vacuum generating device and the vacuum chamber or a shock absorber, a plurality of reinforcing strips, one or more pneumatic elements, a noise barrier, and a coupling can be coupled between the vacuum generating device and the vacuum chamber. A shock sensor connected to one of the imaged charged particle beam microscopes for scanning the deflector. According to embodiments described herein, at least one of a vibration suppression element, a vibration reduction element, a vibration sensing element, or a vibration compensating element as described herein can be included in a substrate for testing a large area. system.

第5A圖示出一成像式帶電粒子束顯微鏡，例如第一成像式帶電粒子束顯微鏡和/或第二成像式帶電粒子束顯微鏡，如在此所述者。帶電粒子束裝置500包含一電子束柱筒20，柱筒20提供例如一第一腔室21、一第二腔室22、和一第三腔室23。也能夠被稱為槍室的第一腔室包含一電子束源30，電子束源30具有一發射器(emitter)31和一射束聚合器(suppressor)32。Figure 5A illustrates an imaged charged particle beam microscope, such as a first imaged charged particle beam microscope and/or a second imaged charged particle beam microscope, as described herein. The charged particle beam device 500 includes an electron beam column 20 that provides, for example, a first chamber 21, a second chamber 22, and a third chamber 23. The first chamber, which can also be referred to as a gun chamber, includes an electron beam source 30 having an emitter 31 and a beam suppressor 32.

發射器31係連接至用於將一電位提供至發射器的一電源531。提供到發射器的電位可為使得電子束係加速至例如20 keV或更高之一能量。於是，發射器可被偏壓到-20 kV或更高負電壓之一電位，這例如是在柱筒和也提供上電極562的射束導引管係在接地電位的案例中，接地電位由第5A圖中的元件符號3所指示。替代性地，在柱筒和/或射束導引管被偏壓至不同於接地電位之一電位的事件中，發射器能夠被偏壓到另一電位，其中發射器和柱筒(或射束導引管)之間的電位差能夠為-20 kV。也能夠提供其他的電位差，例如-10 kV到-40 kV。The transmitter 31 is connected to a power source 531 for supplying a potential to the transmitter. The potential provided to the emitter can be such that the electron beam system is accelerated to one of, for example, 20 keV or higher. Thus, the emitter can be biased to a potential of -20 kV or higher, which is, for example, in the case where the cylinder and the beam guiding tube that also provides the upper electrode 562 are at ground potential, the ground potential is Indicated by the symbol 3 in Fig. 5A. Alternatively, in the event that the cylinder and/or the beam guiding tube are biased to a potential different from one of the ground potentials, the emitter can be biased to another potential, wherein the emitter and the cartridge (or shot) The potential difference between the beam guiding tubes can be -20 kV. Other potential differences can also be provided, for example -10 kV to -40 kV.

以第5A~5C圖所示的裝置，可由電子束源30產生一電子束(未示出)。該射束可被對準至射束限制孔徑(beam limiting aperture)550，其被形成為用以塑形(shape)射束的尺寸，亦即阻擋部分的射束。之後，射束可通過射束分離器(beam separator)580，其將主電子束從一訊號電子束分離，亦即從訊號電子分離。主電子束可由物鏡聚焦到基板160上。基板160係位於基板支撑件110上的一基板位置上。當電子束衝擊到基板160上時，訊號電子(例如二次和/或背向散射電子)或x射線係從基板160釋放，其能夠由一探測器598所探測。An electron beam (not shown) can be generated by the electron beam source 30 in the apparatus shown in Figs. 5A-5C. The beam can be aligned to a beam limiting aperture 550 that is shaped to shape the beam, that is, the beam of the blocking portion. Thereafter, the beam can pass through a beam separator 580 which separates the main electron beam from a signal beam, i.e., from the signal electronics. The main electron beam can be focused onto the substrate 160 by an objective lens. The substrate 160 is located at a substrate location on the substrate support 110. When an electron beam impinges on the substrate 160, signal electrons (e.g., secondary and/or backscattered electrons) or x-rays are released from the substrate 160, which can be detected by a detector 598.

在第5A圖所繪示的範例性的實施例中，係提供一聚焦透鏡520和一射束塑形或射束限制孔徑550。二階段偏向系統(two-stage deflection system)540係提供在聚焦透鏡和射束限制孔徑550(例如一射束塑形孔徑)之間，以將射束對準至孔徑。電子可由一抽出器(extractor)或由陽極加速到柱筒中的電壓。抽出器能例如由聚焦透鏡520的上電極或由另一電極(未示出)所提供。In the exemplary embodiment illustrated in FIG. 5A, a focusing lens 520 and a beam shaping or beam limiting aperture 550 are provided. A two-stage deflection system 540 is provided between the focusing lens and the beam limiting aperture 550 (e.g., a beam shaping aperture) to align the beam to the aperture. The electrons can be accelerated by an extractor or by the anode to a voltage in the column. The extractor can be provided, for example, by the upper electrode of the focusing lens 520 or by another electrode (not shown).

如第5A圖所示，物鏡具有一磁性透鏡元件(magnetic lens component)561，磁性透鏡元件561具有極片(pole piece)64和63並具有一線圈62，磁性透鏡元件561將主電子束聚焦在基板160上。基板160能夠位於基板支撑件110上。第5A圖所示的物鏡包含形成物鏡之一磁性透鏡元件60的上極片63、下極片64和線圈62。另外，上電極562和一下電極530形成物鏡的一靜電透鏡元件。As shown in Fig. 5A, the objective lens has a magnetic lens component 561 having pole pieces 64 and 63 and having a coil 62 that focuses the main electron beam at On the substrate 160. The substrate 160 can be located on the substrate support 110. The objective lens shown in Fig. 5A includes an upper pole piece 63, a lower pole piece 64, and a coil 62 which form one of the objective lens magnetic lens elements 60. In addition, the upper electrode 562 and the lower electrode 530 form an electrostatic lens element of the objective lens.

另外，在第5A圖所繪示的實施例中，係提供一掃描致偏器組件570。掃描致偏器組件570能例如為磁性的，但較佳地是一靜電掃描致偏器組件，其係配置成用於高像素速率(pixel rates)。掃描致偏器組件570可為一單一階段組件，如第5A圖所示。替代性地，也能夠提供一二階段或甚至一三階段致偏器組件。各個階段係提供在沿著光軸2的不同位置。Additionally, in the embodiment illustrated in FIG. 5A, a scan deflector assembly 570 is provided. Scanning deflector assembly 570 can be, for example, magnetic, but is preferably an electrostatic scanning deflector assembly configured for high pixel rates. Scanning deflector assembly 570 can be a single stage component, as shown in Figure 5A. Alternatively, a two-stage or even a three-stage deflector assembly can also be provided. The various stages are provided at different locations along the optical axis 2.

下電極530係連接至一電壓供應器(未示出)。第5A圖所繪示的實施例示出下電極530位於下極片64下方。作為物鏡之浸沒透鏡元件(亦即減速電場透鏡元件)的減速電極的下電極，係典型地在提供帶電粒子在基板上2 keV或更低、例如500 V或1 keV之著陸能量的一電位。The lower electrode 530 is connected to a voltage supply (not shown). The embodiment illustrated in FIG. 5A shows the lower electrode 530 below the lower pole piece 64. The lower electrode of the decelerating electrode as the immersion lens element of the objective lens (i.e., the decelerating electric field lens element) is typically a potential that provides a landing energy of 2 keV or less, for example 500 V or 1 keV, of charged particles on the substrate.

根據一些能夠和在此所述之其他實施例結合的實施例，帶電粒子束的減速能夠提供在試片的附近，例如在物鏡中或在物鏡之後、或者是其組合。減速能夠分別由下電極530(亦即減速電場透鏡)所提供。減速能夠由物鏡的靜電透鏡元件所提供。舉例來說，額外地或替代性地，能夠施加一減速偏壓到試片和/或基板支撑件，以提供根據在此所述的實施例的一減速電場透鏡元件。物鏡能夠為一靜電-磁性複合透鏡，其具有例如一軸向縫隙或一徑向縫隙，或者物鏡能夠為一靜電減速電場透鏡。According to some embodiments that can be combined with other embodiments described herein, deceleration of the charged particle beam can be provided in the vicinity of the test strip, such as in an objective lens or after an objective lens, or a combination thereof. The deceleration can be provided by the lower electrode 530 (i.e., the decelerating electric field lens). The deceleration can be provided by an electrostatic lens element of the objective lens. Additionally or alternatively, a deceleration bias can be applied to the test strip and/or substrate support to provide a decelerating electric field lens element in accordance with embodiments described herein. The objective lens can be an electrostatic-magnetic composite lens having, for example, an axial slit or a radial slit, or the objective lens can be an electrostatically decelerating electric field lens.

具有2 keV或更低之著陸能量、特別是1 keV或更低之著陸能量，其一項優點在於衝擊到基板上的主電子束，和高能電子束相比，產生一較強的訊號。由於沉積在基板上的層(例如低溫多晶矽層)係薄的，且由於高能電子深深地穿過基板中，亦即到層的下方，只有少數的電子可產生一關於沉積層之資訊的探測器訊號。與此相比，低能電子，例如具有2 keV或更低之一著陸能量的電子，只穿過到基板一較淺的區域中，並因此提供更多關於沉積層的資訊。於是，可提供改善的例如晶界的影像，即使當如在此所述的實施例所提供的未進行基板的表面蝕刻亦是如此。An advantage of having a landing energy of 2 keV or less, particularly a landing energy of 1 keV or less, is that the main electron beam impinging on the substrate produces a stronger signal than the high energy electron beam. Since the layer deposited on the substrate (for example, the low-temperature polysilicon layer) is thin, and since the high-energy electrons penetrate deeply through the substrate, that is, below the layer, only a small number of electrons can generate a detection of information about the deposited layer. Signal. In contrast, low-energy electrons, such as electrons having a landing energy of 2 keV or less, pass only into a shallower region of the substrate and thus provide more information about the deposited layer. Thus, improved images such as grain boundaries can be provided, even when surface etching of the substrate is not performed as provided by the embodiments described herein.

對於高解析度應用，較佳地係提供2 keV或更低、例如1 keV或更低之一著陸能量，並在柱筒中具有一高的帶電粒子束能量，比如10 keV或更高、例如30 keV或更高之一射束能量。實施例可包含在試片前的減速，例如是在物鏡內和/或物鏡與試片之間，減速是以5倍或更大之係數、例如10倍或更大之係數來進行。對於其他應用，也可提供2 keV或更低之一著陸能量而未進行減速，例如是在柱筒內的射束能量係不超過2 keV的事件中。For high resolution applications, it is preferred to provide a landing energy of 2 keV or less, such as 1 keV or less, and a high charged particle beam energy in the cylinder, such as 10 keV or higher, such as 30. One of the beam energies of keV or higher. Embodiments may include deceleration prior to the test strip, such as between the objective lens and/or between the objective lens and the test strip, and the deceleration is performed by a factor of 5 or greater, such as 10 or greater. For other applications, one of 2 keV or less of landing energy is also available without deceleration, such as in the event that the beam energy in the cylinder does not exceed 2 keV.

射束分離器580係適用於分離主電子和訊號電子。射束分離器能夠為一維恩過濾器(Wien filter)，且/或能夠為至少一磁性致偏器，使得訊號電子被偏向而從光軸2遠離。訊號電子接著由一射束彎向器(beam bender)592(例如一半球形射束彎向器)和一透鏡594導引到探測器598。能夠提供另外的元件，像是一過濾器596。根據又另外的修改形式，探測器能夠為一分段探測器(segmented detector)，配置成用於依照在試片的起始角度來探測訊號電子。Beam splitter 580 is suitable for separating main electrons and signal electronics. The beam splitter can be a Wien filter and/or can be at least one magnetic deflector such that the signal electronics are deflected away from the optical axis 2. The signal electronics are then directed to detector 598 by a beam bender 592 (e.g., a hemispherical beam bender) and a lens 594. Additional components can be provided, such as a filter 596. According to yet another modification, the detector can be a segmented detector configured to detect signal electronics in accordance with the starting angle of the test strip.

根據又另外的實施例，根據在此所述的實施例的一成像式帶電粒子束顯微鏡也可包含一x射線探測器，例如用於能量色散x射線光譜(Energy -dispersive X-ray spectroscopy, EDX)量測的一探測器。x射線探測器可允許分析回應於電子束之照射而從基板發射的x射線的特徵能量，因此能夠分析基板的化學組成。舉例來說，對於x射線量測或一些其他應用而言，能夠操作一靜電減速透鏡元件，以具有更高的帶電粒子束著陸能量，例如5 keV到15 keV。According to still further embodiments, an imaged charged particle beam microscope according to embodiments described herein may also include an x-ray detector, such as for energy-dispersive X-ray spectroscopy (EDX). ) A detector for measurement. The x-ray detector can allow analysis of the characteristic energy of the x-rays emitted from the substrate in response to the illumination of the electron beam, thus enabling analysis of the chemical composition of the substrate. For example, for x-ray measurements or some other application, an electrostatic deceleration lens element can be operated to have a higher charged particle beam landing energy, such as 5 keV to 15 keV.

第一成像式帶電粒子束顯微鏡和第二成像式帶電粒子束顯微鏡可為一成像式帶電粒子束顯微鏡類型的帶電粒子束裝置，比如例如第5A圖所示的帶電粒子束裝置500。The first imaged charged particle beam microscope and the second imaged charged particle beam microscope may be an imaged charged particle beam microscope type charged particle beam device such as, for example, the charged particle beam device 500 shown in Fig. 5A.

第5B和5C圖繪示部分之一帶電粒子束裝置500的另外可選的實施例。在第5A和5B圖中，示出傾斜帶電粒子束以在一預定的傾斜射束著陸角度下衝擊在基板上的選項。根據在此所述的實施例，如在此所述的一成像式帶電粒子束顯微鏡可被用於以一或更多的傾斜射束成像。於是，能夠改善3D成像、階狀結構的成像、溝槽、孔洞的成像、和/或凸出結構的成像。5B and 5C illustrate additional alternative embodiments of one of the charged particle beam devices 500. In Figures 5A and 5B, the option of tilting the charged particle beam to impinge on the substrate at a predetermined oblique beam landing angle is shown. In accordance with embodiments described herein, an imaged charged particle beam microscope as described herein can be used to image with one or more oblique beams. Thus, 3D imaging, imaging of the stepped structure, imaging of the grooves, holes, and/or imaging of the protruding structures can be improved.

在第5B圖中，一帶電粒子束源(未示出)發射一帶電粒子束，以沿著光軸2朝著將射束聚焦到一基板160的表面上的物鏡560行進。透鏡前偏向單元(pre-lens deflection unit)510能夠包含二個偏向線圈，偏向線圈使射束從光軸2偏向。鑑於該二個階段，射束能夠被偏向成看似從與帶電粒子束源之視位(apparent position)重合的一個點浮現。透鏡前偏向單元510係配置在帶電粒子源和物鏡560之間。能夠提供一透鏡內偏向單元(in-lens deflection unit)512於物鏡的場內，使得分別的場重疊。透鏡內偏向單元512能夠為包括二個偏向線圈的一二階段單元。雖然第5B圖的略圖示出其中一個線圈係位於物鏡560主面的上方且一個線圈係位於物鏡560主面的下方的一配置，其他配置也是可能的，特別是提供透鏡內偏向單元和物鏡的場之間一重疊的配置。In Figure 5B, a charged particle beam source (not shown) emits a charged particle beam to travel along the optical axis 2 toward the objective lens 560 that focuses the beam onto the surface of a substrate 160. The pre-lens deflection unit 510 can include two deflection coils that deflect the beam from the optical axis 2. In view of these two phases, the beam can be biased to appear to appear from a point that coincides with the apparent position of the charged particle beam source. The lens front deflection unit 510 is disposed between the charged particle source and the objective lens 560. An in-lens deflection unit 512 can be provided within the field of the objective lens such that the respective fields overlap. The intra-lens deflection unit 512 can be a two-stage unit including two deflection coils. Although the outline of FIG. 5B shows a configuration in which one coil is located above the main surface of the objective lens 560 and one coil is located below the main surface of the objective lens 560, other configurations are possible, in particular, providing an intra-lens deflection unit and an objective lens. An overlapping configuration between the fields.

透鏡內偏向單元512能夠重新導向射束，因此射束在光軸上通過物鏡的中心，亦即聚焦動作的中心。重新導向係使得帶電粒子束從實質上相對於沒有通過光軸2之射束的方向的一方向撞擊基板的表面。透鏡內偏向單元512和物鏡560的結合動作將帶電粒子束導回光軸，使得帶電粒子束在預定的傾斜射束著陸角度下撞擊試樣。The in-lens deflection unit 512 is capable of redirecting the beam so that the beam passes through the center of the objective lens on the optical axis, that is, the center of the focusing action. The redirecting system causes the charged particle beam to strike the surface of the substrate from substantially one direction relative to the direction of the beam that does not pass through the optical axis 2. The combined action of the in-lens deflection unit 512 and the objective lens 560 directs the charged particle beam back to the optical axis such that the charged particle beam strikes the sample at a predetermined oblique beam landing angle.

在第5C圖，一帶電粒子束源(未示出)發射一帶電粒子束，以沿著光軸2朝著將射束聚焦到一基板160的表面上的物鏡560行進。偏向單元510包括二個致偏器，以使射束偏向遠離光軸。鑑於該二個階段，射束能夠被偏向成看似從與帶電粒子束源之視位重合的一個點浮現。透鏡前偏向單元510能夠被配置在帶電粒子源和物鏡560之間。在透鏡前偏向單元510上方，能夠設置一維恩過濾器513，其產生交叉電場和磁場(crossed electric and magnetic fields)。帶電粒子束通過物鏡560的離軸路徑導致一第一色像差。維恩過濾器513的能量色散效應引入和第一色像差同種的一第二色像差。適當地選擇維恩過濾器的電場E和磁場B的強度，第二色像差能夠被調整成具有和第一色像差相同的振幅但相反的方向。其效果是，第二色像差在基板表面的該平面實質上補償了第一色像差。帶電粒子束係藉由離軸地行進通過物鏡560和物鏡的聚焦動作所傾斜。In Figure 5C, a charged particle beam source (not shown) emits a charged particle beam to travel along the optical axis 2 toward the objective lens 560 that focuses the beam onto the surface of a substrate 160. The deflection unit 510 includes two deflectors to bias the beam away from the optical axis. In view of these two phases, the beam can be biased to appear to emerge from a point that coincides with the apparent position of the charged particle beam source. The lens front deflection unit 510 can be disposed between the charged particle source and the objective lens 560. Above the lens front deflection unit 510, a Wien filter 513 can be provided that produces crossed electric and magnetic fields. The off-axis path of the charged particle beam through the objective lens 560 results in a first chromatic aberration. The energy dispersion effect of the Wien filter 513 introduces a second chromatic aberration of the same kind as the first chromatic aberration. The intensity of the electric field E and the magnetic field B of the Wien filter is appropriately selected, and the second chromatic aberration can be adjusted to have the same amplitude as the first chromatic aberration but opposite directions. The effect is that the second chromatic aberration substantially compensates for the first chromatic aberration on the plane of the substrate surface. The charged particle beam is tilted by the focusing action of the objective lens 560 and the objective lens traveling off-axis.

雖然第5B和5C圖示出包括二個偏向線圈的偏向單元，但也可能使用其他的偏向單元，例如只由單一致偏器組成的偏向單元。又另外，代替使用用於磁性偏向的線圈，能夠使用靜電致偏器或磁性-靜電組合致偏器。根據又另外的可被額外地或替代性地應用的實施例，射束之傾斜也可藉由相對於基板機械性地傾斜柱筒(亦即光軸2)來引入。然而，藉由在柱筒內提供一想要的射束路徑來傾斜帶電粒子束，和一機械運動相比，提供了射束角度之間較快速的切換，並減少震動的引入。傾斜帶電粒子束允許了另外的成像選項，其對於3D成像、階狀結構、溝槽、孔洞、或凸出結構的成像而言可能是有利的。舉例來說，定臨界尺寸(critical dimensioning, CD)可較佳地利用射束的傾斜。Although FIGS. 5B and 5C illustrate a deflection unit including two deflection coils, it is also possible to use other deflection units, such as a deflection unit composed of only a single uniform bias. Further, instead of using a coil for magnetic deflection, an electrostatic deflector or a magnetic-electrostatic combined deflector can be used. According to yet another embodiment which may be additionally or alternatively applied, the tilt of the beam may also be introduced by mechanically tilting the cylinder (i.e., optical axis 2) relative to the substrate. However, tilting the charged particle beam by providing a desired beam path within the cylinder provides a faster switching between beam angles and reduces the introduction of shock as compared to a mechanical motion. Tilting the charged particle beam allows for additional imaging options that may be advantageous for imaging 3D imaging, stepped structures, trenches, holes, or protruding structures. For example, critical dimensioning (CD) may preferably utilize the tilt of the beam.

根據一些實施例，提供一種用於檢查基板、特別是用於顯示器製造之大面積之基板的設備。該設備包含如在此所述的一真空室。該設備另外包含一基板支撑件，配置在真空室中，如在此所述者。設備另外包含一第一成像式帶電粒子束顯微鏡和一第二成像式帶電粒子束顯微鏡，如在此所述者。第二成像式帶電粒子束顯微鏡係從第一成像式帶電粒子束顯微鏡相距至少30公分的一距離。According to some embodiments, an apparatus for inspecting a substrate, particularly a substrate of a large area for display manufacturing, is provided. The apparatus comprises a vacuum chamber as described herein. The apparatus additionally includes a substrate support disposed in the vacuum chamber, as described herein. The apparatus additionally includes a first imaged charged particle beam microscope and a second imaged charged particle beam microscope, as described herein. The second imaged charged particle beam microscope is at a distance of at least 30 centimeters from the first imaged charged particle beam microscope.

第6A~6B圖根據在此所述的實施例繪示用於檢查基板的一方法。在第6A~6B圖所繪示的範例性的實施例中，該方法係使用如於在此所述的其他實施例中所述的用於測試大面積之基板的設備100來進行。6A-6B illustrate a method for inspecting a substrate in accordance with embodiments described herein. In the exemplary embodiment illustrated in Figures 6A-6B, the method is performed using apparatus 100 for testing a large area substrate as described in other embodiments described herein.

第6A圖示出一基板160，設置在真空室120中基板支撑件110上。基板160具有沿著x方向150的一基板寬度810。如另外示出的，一第一帶電粒子束610係由第一成像式帶電粒子束顯微鏡130產生在真空室120中。這對應至第10圖中的方框902。第一帶電粒子束610被導向到基板160上以檢查基板160，其中第一帶電粒子束610係在一第一射束位置611衝擊到基板160上。「第一射束位置」之術語，如在此所使用者，可包含當第一帶電粒子束衝擊到基板上時第一帶電粒子束的一位置。第一帶電粒子束610可衝擊到基板160上，以檢查基板上的一第一測試目標(未示出)，例如一第一缺陷。FIG. 6A illustrates a substrate 160 disposed on the substrate support 110 in the vacuum chamber 120. The substrate 160 has a substrate width 810 along the x-direction 150. As shown otherwise, a first charged particle beam 610 is produced in the vacuum chamber 120 by a first imaged charged particle beam microscope 130. This corresponds to block 902 in FIG. The first charged particle beam 610 is directed onto the substrate 160 to inspect the substrate 160, wherein the first charged particle beam 610 is impacted onto the substrate 160 at a first beam position 611. The term "first beam position", as used herein, may include a location of the first charged particle beam as the first charged particle beam impinges on the substrate. The first charged particle beam 610 can impinge on the substrate 160 to inspect a first test target (not shown) on the substrate, such as a first defect.

如第6A圖另外示出的，第一帶電粒子束610從第一成像式帶電粒子束顯微鏡130沿著第一光軸131行進到基板160，因此衝擊到基板160上的第一帶電粒子束610係垂直於基板160。替代性地，衝擊到基板160上的第一帶電粒子束610也可被相對於基板160傾斜，例如如參照第5B和5C圖所敘述者。舉例來說，傾斜可藉由傾斜第一成像式帶電粒子束顯微鏡的柱筒、或藉由傾斜在柱筒內的射束(例如是藉由用於使帶電粒子束偏向的一偏向系統)而被引入。As further shown in FIG. 6A, the first charged particle beam 610 travels from the first imaged charged particle beam microscope 130 along the first optical axis 131 to the substrate 160, thus impinging on the first charged particle beam 610 on the substrate 160. It is perpendicular to the substrate 160. Alternatively, the first charged particle beam 610 impinging on the substrate 160 can also be tilted relative to the substrate 160, such as as described with reference to Figures 5B and 5C. For example, the tilt can be by tilting the cylinder of the first imaged charged particle beam microscope, or by tilting the beam within the cylinder (eg, by a biasing system for biasing the charged particle beam) be introduced.

當第一帶電粒子束610衝擊到基板160上時，可能產生二次和/或背向散射粒子。二次和/或背向散射粒子可由包含在第一成像式帶電粒子束顯微鏡130中的一探測器所探測，如上所述。由探測器所收集並由二次和/或背向散射粒子產生的資料，可提供關於基板160的資訊，並/或可被用於成像部分的基板160。When the first charged particle beam 610 impinges on the substrate 160, secondary and/or backscattering particles may be generated. The secondary and/or backscattering particles can be detected by a detector included in the first imaged charged particle beam microscope 130, as described above. The data collected by the detector and generated by the secondary and/or backscattered particles may provide information about the substrate 160 and/or may be used for the substrate 160 of the imaging portion.

在第6B圖中，和第6A圖所示的基板160相比，由基板支撑件110所夾持的基板160已沿著x方向被位移。第6B圖中的虛線690指示在基板160位移之前的基板160位置，亦即第6A圖所示的基板160位置。第6B圖所示的基板160已被位移跨過沿著x方向150的一距離650。基板支撑件110沿著x方向150的位移，係由位移單元410所提供。基板160位移所沿著的距離650可以是，例如對於第6代基板而言最多900公釐。替代性地或額外地，距離650可落在基板寬度810的50%到70%的範圍內。In FIG. 6B, the substrate 160 held by the substrate support 110 has been displaced in the x direction as compared with the substrate 160 shown in FIG. 6A. A broken line 690 in Fig. 6B indicates the position of the substrate 160 before the displacement of the substrate 160, that is, the position of the substrate 160 shown in Fig. 6A. The substrate 160 shown in FIG. 6B has been displaced across a distance 650 along the x-direction 150. The displacement of the substrate support 110 along the x-direction 150 is provided by the displacement unit 410. The distance 650 along which the substrate 160 is displaced may be, for example, up to 900 mm for the 6th generation substrate. Alternatively or additionally, the distance 650 may fall within the range of 50% to 70% of the substrate width 810.

如第6B圖另外示出的，一第二帶電粒子束620係由第二成像式帶電粒子束顯微鏡140產生在真空室120中。第二帶電粒子束620被導向到基板160上以檢查基板160，其中第二帶電粒子束620係在一第二射束位置621衝擊到基板160上。這對應至第10圖中的方框904。類似於「第一射束位置」之術語，「第二射束位置」之字語可包含當第二帶電粒子束衝擊到基板上時第二帶電粒子束的一位置。第二帶電粒子束620可衝擊到基板160上，以檢查基板上的一第二測試目標(未示出)，例如一第二缺陷。As further shown in FIG. 6B, a second charged particle beam 620 is produced in the vacuum chamber 120 by a second imaged charged particle beam microscope 140. The second charged particle beam 620 is directed onto the substrate 160 to inspect the substrate 160, wherein the second charged particle beam 620 is impacted onto the substrate 160 at a second beam position 621. This corresponds to block 904 in FIG. Similar to the term "first beam position", the term "second beam position" may include a position of the second charged particle beam when the second charged particle beam impinges on the substrate. The second charged particle beam 620 can impinge on the substrate 160 to inspect a second test target (not shown) on the substrate, such as a second defect.

在第6B圖所繪示的實施例中，第二帶電粒子束620從第二成像式帶電粒子束顯微鏡140沿著第二光軸141行進到基板160。替代性地，衝擊到基板160上的第二帶電粒子束620也可被相對於基板160傾斜，例如如參照第5B和5C圖所敘述者。舉例來說，610也可被相對於基板160傾斜，例如如參照第5B和5C圖所敘述者。舉例來說，傾斜可藉由傾斜第一成像式帶電粒子束顯微鏡的柱筒、或藉由傾斜在柱筒內的射束(例如是藉由用於使帶電粒子束偏向的一偏向系統)而被引入。In the embodiment depicted in FIG. 6B, the second charged particle beam 620 travels from the second imaged charged particle beam microscope 140 along the second optical axis 141 to the substrate 160. Alternatively, the second charged particle beam 620 impinging on the substrate 160 can also be tilted relative to the substrate 160, such as described with reference to Figures 5B and 5C. For example, 610 can also be tilted relative to substrate 160, such as those described with reference to Figures 5B and 5C. For example, the tilt can be by tilting the cylinder of the first imaged charged particle beam microscope, or by tilting the beam within the cylinder (eg, by a biasing system for biasing the charged particle beam) be introduced.

第二射束位置621係從第一射束位置611相距一射束距離630。由於在第6A~6B圖所繪示的範例性的實施例中，當第一帶電粒子束610衝擊到基板160上時第一帶電粒子束610是沿著第一光軸131行進，並由於當第二帶電粒子束620衝擊到基板160上時第二帶電粒子束620是沿著第二光軸141行進，射束距離630與第一光軸13和第二光軸141之間的距離重合。在另一實施例中，例如如果第一帶電粒子束610和/或第二帶電粒子束620相對於基板160傾斜，射束距離630可不同於第一光軸13和第二光軸141之間的距離。The second beam position 621 is a beam distance 630 from the first beam position 611. As in the exemplary embodiment illustrated in FIGS. 6A-6B, the first charged particle beam 610 travels along the first optical axis 131 when the first charged particle beam 610 impinges on the substrate 160, and When the second charged particle beam 620 impinges on the substrate 160, the second charged particle beam 620 travels along the second optical axis 141, and the beam distance 630 coincides with the distance between the first optical axis 13 and the second optical axis 141. In another embodiment, the beam distance 630 may be different between the first optical axis 13 and the second optical axis 141, for example, if the first charged particle beam 610 and/or the second charged particle beam 620 are tilted relative to the substrate 160. the distance.

類似於前述參照第6A圖對於第一帶電粒子束610的討論，當第二帶電粒子束620衝擊到基板160上時，可能產生二次和/或背向散射粒子。二次和/或背向散射粒子可由包含在第二成像式帶電粒子束顯微鏡140中的一探測器所探測。如果基板160含有例如一第二缺陷在第二帶電粒子束620衝擊到基板160上的位置，關於第二缺陷的資訊可藉由探測二次和/或背向散射粒子獲得。Similar to the foregoing discussion of the first charged particle beam 610 with reference to FIG. 6A, when the second charged particle beam 620 impinges on the substrate 160, secondary and/or backscattering particles may be generated. The secondary and/or backscattering particles can be detected by a detector included in the second imaged charged particle beam microscope 140. If the substrate 160 contains, for example, a second defect at a location where the second charged particle beam 620 impinges on the substrate 160, information about the second defect can be obtained by detecting secondary and/or backscattering particles.

根據另一實施例，供一種用於檢查基板、特別是用於顯示器製造之大面積之基板的方法。該方法包含提供一基板在一真空室中。基板可被提供至配置在真空室中的一可移動的基板支撑件，如在此所述者。真空環境可提供在真空室中，其中真空室可具有低於10-1 毫巴的一壓力。該方法另外包含以一第一成像式帶電粒子束顯微鏡產生一第一帶電粒子束。該第一成像式帶電粒子束顯微鏡可為如上所述的一第一成像式帶電粒子束顯微鏡。基板可被提供在第一成像式帶電粒子束顯微鏡下方。基板和第一成像式帶電粒子束顯微鏡之間的工作距離可為20公釐或更短。典型地，工作距離將由下極片和基板之間的距離所定義。第一帶電粒子束在一第一射束位置衝擊在基板上。如上所述，「第一射束位置」之術語，如在此所使用者，可包含當第一帶電粒子束衝擊到基板上時第一帶電粒子束的一位置。第一帶電粒子束可衝擊到基板的一第一區上以檢查該第一區。所述方法可另外包含在真空室中將基板位移一位移距離。位移距離可例如意指第6B圖所示的距離650。基板可在平行於基板的一方向被位移，或被位移至由第一成像式帶電粒子束顯微鏡和/或由第二成像式帶電粒子束顯微鏡所檢查的基板的一表面。基板可沿著第一方向被位移，如在此所述者。該方法另外包含以一第二成像式帶電粒子束顯微鏡產生一第二帶電粒子束。第二成像式帶電粒子束顯微鏡可為如上所述的一第二成像式帶電粒子束顯微鏡，例如一SEM。位移後的基板可被設置在第二成像式帶電粒子束顯微鏡下方。基板和第二成像式帶電粒子束顯微鏡之間的工作距離可為20公釐或更短。According to another embodiment, there is provided a method for inspecting a substrate, particularly a substrate of a large area for display fabrication. The method includes providing a substrate in a vacuum chamber. The substrate can be provided to a movable substrate support disposed in the vacuum chamber, as described herein. A vacuum environment can be provided in the vacuum chamber, wherein the vacuum chamber can have a pressure of less than 10 -1 mbar. The method additionally includes generating a first charged particle beam with a first imaged charged particle beam microscope. The first imaged charged particle beam microscope can be a first imaged charged particle beam microscope as described above. The substrate can be provided below the first imaged charged particle beam microscope. The working distance between the substrate and the first imaged charged particle beam microscope may be 20 mm or less. Typically, the working distance will be defined by the distance between the lower pole piece and the substrate. The first charged particle beam impinges on the substrate at a first beam position. As noted above, the term "first beam position", as used herein, may include a location of the first charged particle beam as the first charged particle beam impinges on the substrate. The first charged particle beam can impinge on a first region of the substrate to inspect the first region. The method can additionally include displacing the substrate a displacement distance in the vacuum chamber. The displacement distance may, for example, mean the distance 650 shown in FIG. 6B. The substrate may be displaced in a direction parallel to the substrate or displaced to a surface of the substrate as inspected by the first imaged charged particle beam microscope and/or by the second imaged charged particle beam microscope. The substrate can be displaced along the first direction, as described herein. The method additionally includes generating a second charged particle beam with a second imaged charged particle beam microscope. The second imaged charged particle beam microscope can be a second imaged charged particle beam microscope as described above, such as an SEM. The displaced substrate can be placed under the second imaged charged particle beam microscope. The working distance between the substrate and the second imaged charged particle beam microscope may be 20 mm or less.

第一帶電粒子束和第二帶電粒子束可在時間中的不同時刻產生，因此基板可在時間中的不同時刻由第一帶電粒子束和由第二帶電粒子束所檢查。替代性地，第一帶電粒子束和第二帶電粒子束可平行產生，因此基板可在時間中的相同時刻由第一帶電粒子束和由第二帶電粒子束所檢查。於是，根據實施例之第一成像式帶電粒子束顯微鏡和第二成像式帶電粒子束顯微鏡的配置，除了被用於減少腔室尺寸外，也可被用於增加吞吐量，並因此提高檢查設備的解析(resolution)。The first charged particle beam and the second charged particle beam can be generated at different times in time, so the substrate can be inspected by the first charged particle beam and by the second charged particle beam at different times in time. Alternatively, the first charged particle beam and the second charged particle beam may be generated in parallel, so the substrate may be inspected by the first charged particle beam and by the second charged particle beam at the same time in time. Thus, the configuration of the first imaged charged particle beam microscope and the second imaged charged particle beam microscope according to the embodiment can be used to increase throughput, and thus improve inspection equipment, in addition to being used to reduce the chamber size. Resolution.

第二帶電粒子束在一第二射束位置衝擊在基板上。在此，第一射束位置沿著第一方向從第二射束位置相距至少30公分的一第二距離。如上所述，「第二射束位置」之術語，如在此所使用者，可包含當第二帶電粒子束衝擊到基板上時第二帶電粒子束的一位置。第二帶電粒子束可衝擊到基板的一第二區上以檢查該第二區，其中第二區相距自第一區。於是，第一帶電粒子束和第二帶電粒子束可檢查基板的不同部分。第一區和第二區之間的距離可落在30公分到180公分的範圍內，其可依照測試系統所設計用於的大面積之基板的尺寸而定。The second charged particle beam impinges on the substrate at a second beam position. Here, the first beam position is at a second distance of at least 30 cm from the second beam position along the first direction. As noted above, the term "second beam position", as used herein, may include a location of the second charged particle beam as the second charged particle beam impinges on the substrate. The second charged particle beam can impinge on a second region of the substrate to inspect the second region, wherein the second region is spaced from the first region. Thus, the first charged particle beam and the second charged particle beam can inspect different portions of the substrate. The distance between the first zone and the second zone may fall within the range of 30 centimeters to 180 centimeters, depending on the size of the large area substrate on which the test system is designed.

第一帶電粒子束和第二帶電粒子束可垂直於基板地或相對於基板以一角度衝擊到基板上，其中該角度可低於90度。第一帶電粒子束或第二帶電粒子束衝擊到試樣上的一著陸能量可落在0 keV到2 keV、又更特別是100 eV到1 keV的範圍內。The first charged particle beam and the second charged particle beam may impinge on the substrate at an angle perpendicular to the substrate or relative to the substrate, wherein the angle may be less than 90 degrees. A landing energy impacted by the first charged particle beam or the second charged particle beam onto the sample may fall within the range of 0 keV to 2 keV, and more particularly 100 eV to 1 keV.

第7A~7D圖根據在此所述的實施例示出成像式帶電粒子束顯微鏡(包含第一成像式帶電粒子束顯微鏡和第二成像式帶電粒子束顯微鏡)在一真空室中之不同配置的範例。第7A圖所示的第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140的配置係類似於以上考慮的實施例。特別是，第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140係沿著x方向150配置。如所指示者，第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140二者相對於y方向152皆配置在相同的y座標710。7A-7D illustrate examples of different configurations of an imaged charged particle beam microscope (including a first imaged charged particle beam microscope and a second imaged charged particle beam microscope) in a vacuum chamber in accordance with embodiments described herein. . The configuration of the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140 shown in Fig. 7A is similar to the embodiment considered above. In particular, the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140 are arranged along the x-direction 150. As indicated, both the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140 are disposed at the same y-coordinate 710 with respect to the y-direction 152.

第7B圖示出設備100，其中第一成像式帶電粒子束顯微鏡130係在一第一y座標720配置於真空室120中，且其中第二成像式帶電粒子束顯微鏡係配置在不同於第一y座標的一第二y座標721。在第7B圖所繪示的實施例中，第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡之間沿著x方向150的距離135，係一第一投影軸722和一第二投影軸723之間的一距離。第一投影軸722沿著y方向152延伸通過第一成像式帶電粒子束顯微鏡130的中心724，且第二投影軸723沿著y方向延伸通過第二成像式帶電粒子束顯微鏡140的中心725。以數學方式來說，第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140之間沿著x方向150的距離135係二個點A和B之間的一距離，其中A是中心724在x方向150上的正交投影，且B是中心725在x方向150上的正交投影。Figure 7B illustrates apparatus 100 in which a first imaged charged particle beam microscope 130 is disposed in a vacuum chamber 120 at a first y coordinate 720, and wherein the second imaged charged particle beam microscope is configured differently than the first A second y coordinate 721 of the y coordinate. In the embodiment illustrated in FIG. 7B, a distance 135 between the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope along the x direction 150 is a first projection axis 722 and a A distance between the second projection axes 723. The first projection axis 722 extends through the center 724 of the first imaged charged particle beam microscope 130 along the y-direction 152, and the second projection axis 723 extends through the center 725 of the second imaged charged particle beam microscope 140 along the y-direction. Mathematically, the distance 135 between the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140 along the x-direction 150 is a distance between two points A and B, where A Is an orthogonal projection of the center 724 in the x direction 150, and B is an orthogonal projection of the center 725 in the x direction 150.

第7C圖繪示一實施例，根據該實施例，設備100另外包含一第三成像式帶電粒子束顯微鏡750，且其中第一成像式帶電粒子束顯微鏡130、第二成像式帶電粒子束顯微鏡140、和第三成像式帶電粒子束顯微鏡750係沿著x方向150配置。如所指示者，第一成像式帶電粒子束顯微鏡130、第二成像式帶電粒子束顯微鏡140、和第三成像式帶電粒子束顯微鏡750相對於y方向152係配置在相同的y座標730。第三成像式帶電粒子束顯微鏡750沿著x方向150從第一成像式帶電粒子束顯微鏡130相距一距離761，並沿著x方向從第二成像式帶電粒子束顯微鏡140相距一距離762。在範例性的實施例中，第一成像式帶電粒子束顯微鏡130、第二成像式帶電粒子束顯微鏡140、和第三成像式帶電粒子束顯微鏡750係以對稱的方式線性地配置，其中距離761等於距離762。和具有二個成像式帶電粒子束顯微鏡的一設備相比，如第7C圖所示的包含一第三成像式帶電粒子束顯微鏡750可允許進一步地減少基板沿著x方向150行進以檢查基板上之缺陷的距離。於是，和包含二個成像式帶電粒子束顯微鏡的一真空室(比如例如第7A圖所示的真空室120)相比，第7C圖所示的真空室120的內寬121較小。FIG. 7C illustrates an embodiment according to which the apparatus 100 further includes a third imaging charged particle beam microscope 750, and wherein the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 And a third imaged charged particle beam microscope 750 is arranged along the x direction 150. As indicated, the first imaged charged particle beam microscope 130, the second imaged charged particle beam microscope 140, and the third imaged charged particle beam microscope 750 are disposed at the same y-coordinate 730 with respect to the y-direction 152. The third imaged charged particle beam microscope 750 is spaced a distance 761 from the first imaging charged particle beam microscope 130 along the x-direction 150 and a distance 762 from the second imaging charged particle beam microscope 140 along the x-direction. In an exemplary embodiment, the first imaged charged particle beam microscope 130, the second imaged charged particle beam microscope 140, and the third imaged charged particle beam microscope 750 are linearly arranged in a symmetrical manner, wherein the distance 761 Equal to the distance 762. Including a third imaged charged particle beam microscope 750 as shown in FIG. 7C can allow for further reduction of substrate travel along the x-direction 150 to inspect the substrate as compared to a device having two imaged charged particle beam microscopes. The distance of the defect. Thus, the inner width 121 of the vacuum chamber 120 shown in Fig. 7C is smaller than a vacuum chamber including two imaged charged particle beam microscopes (such as, for example, the vacuum chamber 120 shown in Fig. 7A).

第7D圖繪示一實施例，根據該實施例，設備100另外包含一第四成像式帶電粒子束顯微鏡760。第一成像式帶電粒子束顯微鏡130、第二成像式帶電粒子束顯微鏡140、第三成像式帶電粒子束顯微鏡750、和第四成像式帶電粒子束顯微鏡760係對稱地配置成形狀為正方形的一陣列。在此，第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140係在一第一y座標741配置成陣列的一第一排。第三成像式帶電粒子束顯微鏡750和第四成像式帶電粒子束顯微鏡760係在一第二y座標740配置成陣列的一第二排。第三成像式帶電粒子束顯微鏡750沿著y方向152從第一成像式帶電粒子束顯微鏡130相距一距離781，並沿著x方向從第四成像式帶電粒子束顯微鏡760相距一距離782。第四成像式帶電粒子束顯微鏡760另外沿著y方向從第二成像式帶電粒子束顯微鏡140相距一距離783。距離135、距離781、距離782、和距離783係相等的距離。和具有二個成像式帶電粒子束顯微鏡的一設備相比，如第7D圖所示的包含四個成像式帶電粒子束顯微鏡的一配置，可允許減少基板沿著y方向152行進以檢查基板上之缺陷的距離。於是，和包含二個成像式帶電粒子束顯微鏡的一真空室(比如例如第7A圖所示的真空室120)相比，可減少真空室120沿著y方向的一尺寸770。FIG. 7D illustrates an embodiment according to which the apparatus 100 additionally includes a fourth imaged charged particle beam microscope 760. The first imaged charged particle beam microscope 130, the second imaged charged particle beam microscope 140, the third imaged charged particle beam microscope 750, and the fourth imaged charged particle beam microscope 760 are symmetrically arranged in a square shape. Array. Here, the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140 are arranged in a first row of a first y coordinate 741 in an array. The third imaged charged particle beam microscope 750 and the fourth imaged charged particle beam microscope 760 are arranged in a second row of a second y coordinate 740 in an array. The third imaged charged particle beam microscope 750 is spaced a distance 781 from the first imaging charged particle beam microscope 130 along the y-direction 152 and a distance 782 from the fourth imaging charged particle beam microscope 760 along the x-direction. The fourth imaged charged particle beam microscope 760 is additionally spaced a distance 783 from the second imaged charged particle beam microscope 140 along the y-direction. Distance 135, distance 781, distance 782, and distance 783 are equal distances. Compared to a device having two imaged charged particle beam microscopes, a configuration comprising four imaged charged particle beam microscopes as shown in Figure 7D allows the substrate to be reduced in the y-direction 152 to be inspected on the substrate. The distance of the defect. Thus, a dimension 770 of the vacuum chamber 120 along the y-direction can be reduced as compared to a vacuum chamber comprising two imaged charged particle beam microscopes (such as, for example, the vacuum chamber 120 shown in Figure 7A).

第一成像式帶電粒子束顯微鏡和第二成像式帶電粒子束顯微鏡之間沿著第一方向的距離，如在此所述者，可為第一成像式帶電粒子束顯微鏡和第二成像式帶電粒子束顯微鏡之間的一絕對距離，特別是如果第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140係沿著第一方向配置更是如此。舉例來說，在第7A圖所示的設備100中，沿著x方向的距離135，係第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140之間的一絕對距離，其中第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140沿著x方向150配置。The distance between the first imaged charged particle beam microscope and the second imaged charged particle beam microscope along the first direction, as described herein, may be the first imaged charged particle beam microscope and the second imaged charged An absolute distance between the particle beam microscopes, especially if the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140 are arranged along the first direction. For example, in the apparatus 100 shown in FIG. 7A, the distance 135 along the x direction is an absolute distance between the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140, The first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140 are disposed along the x direction 150.

替代性地，沿著第一方向的距離可為沿著第一方向的一投影距離，特別是如果第一成像式帶電粒子束顯微鏡和第二成像式帶電粒子束顯微鏡並非沿著第一方向配置更是如此。投影距離可能小於第一成像式帶電粒子束顯微鏡和第二成像式帶電粒子束顯微鏡之間的絕對距離。舉例來說，在第7B圖所示的設備100中，沿著第一方向的距離，可意指第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140之間的投影距離135，其中第一成像式帶電粒子束顯微鏡130和第二成像式帶電粒子束顯微鏡140並非沿著x方向150配置。Alternatively, the distance along the first direction may be a projection distance along the first direction, particularly if the first imaged charged particle beam microscope and the second imaged charged particle beam microscope are not arranged along the first direction This is especially true. The projection distance may be less than the absolute distance between the first imaged charged particle beam microscope and the second imaged charged particle beam microscope. For example, in the apparatus 100 shown in FIG. 7B, the distance along the first direction may mean the projection distance between the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140. 135, wherein the first imaged charged particle beam microscope 130 and the second imaged charged particle beam microscope 140 are not disposed along the x-direction 150.

根據能夠和在此所述之其他實施例結合的實施例，設備可包含一或更多個另外的成像式帶電粒子束顯微鏡，適用於檢查由基板支撑件所支撐的基板，特別是一第三和/或一第四成像式帶電粒子束顯微鏡。According to embodiments that can be combined with other embodiments described herein, the apparatus can include one or more additional imaged charged particle beam microscopes suitable for inspecting substrates supported by substrate supports, particularly a third And/or a fourth imaged charged particle beam microscope.

雖然前述內容係導向一些實施例，但可設計出其他和另外的實施例而不背離其基本範圍，其基本範圍由以下的申請專利範圍所決定。While the foregoing is directed to some embodiments, other and additional embodiments may be devised without departing from the scope of the invention.

2‧‧‧光軸
3‧‧‧元件符號
20‧‧‧柱筒
21‧‧‧第一腔室
22‧‧‧第二腔室
23‧‧‧第三腔室
30‧‧‧電子束源
31‧‧‧發射器
32‧‧‧射束聚合器
60‧‧‧磁性透鏡元件
62‧‧‧線圈
63‧‧‧極片
64‧‧‧極片
100‧‧‧設備
110‧‧‧基板支撑件
120‧‧‧真空室
121‧‧‧內寬
121'‧‧‧內寬
122‧‧‧牆壁
123‧‧‧牆壁
130‧‧‧第一成像式帶電粒子束顯微鏡
131‧‧‧第一光軸
135‧‧‧距離
140‧‧‧第二成像式帶電粒子束顯微鏡
141‧‧‧第二光軸
150‧‧‧x方向
151‧‧‧z方向
152‧‧‧y方向
160‧‧‧基板
210‧‧‧基板接收區
220‧‧‧寬度
410‧‧‧位移單元
420‧‧‧真空幫浦
430‧‧‧連接部
431‧‧‧減震器
432‧‧‧第一聯結器
433‧‧‧第二聯結器
440‧‧‧氣動元件
441‧‧‧支腳
450‧‧‧震動感測器
470‧‧‧強化條
500‧‧‧帶電粒子束裝置
510‧‧‧偏向單元
512‧‧‧偏向單元
513‧‧‧維恩過濾器
520‧‧‧聚焦透鏡
530‧‧‧下電極
531‧‧‧電源
540‧‧‧二階段偏向系統
550‧‧‧射束限制孔徑
560‧‧‧物鏡
561‧‧‧磁性透鏡元件
562‧‧‧上電極
570‧‧‧掃描致偏器組件
580‧‧‧射束分離器
592‧‧‧射束彎向器
594‧‧‧透鏡
596‧‧‧過濾器
598‧‧‧探測器
610‧‧‧第一帶電粒子束
611‧‧‧第一射束位置
620‧‧‧第二帶電粒子束
621‧‧‧第二射束位置
630‧‧‧射束距離
650‧‧‧距離
690‧‧‧虛線
710‧‧‧y座標
720‧‧‧第一y座標
721‧‧‧第二y座標
722‧‧‧第一投影軸
723‧‧‧第二投影軸
724‧‧‧中心
725‧‧‧中心
730‧‧‧y座標
740‧‧‧第二y座標
741‧‧‧第一y座標
750‧‧‧第三成像式帶電粒子束顯微鏡
760‧‧‧第四成像式帶電粒子束顯微鏡
761‧‧‧距離
762‧‧‧距離
770‧‧‧尺寸
781‧‧‧距離
782‧‧‧距離
783‧‧‧距離
810‧‧‧基板寬度
820‧‧‧第一區
821‧‧‧第一寬度
822‧‧‧第一缺陷
830‧‧‧第二區
831‧‧‧第二寬度
832‧‧‧第二缺陷
900‧‧‧成像式帶電粒子束顯微鏡
902‧‧‧方框
904‧‧‧方框
910‧‧‧虛線2‧‧‧ optical axis
3‧‧‧Component symbol
20‧‧‧column
21‧‧‧First Chamber
22‧‧‧ second chamber
23‧‧‧ third chamber
30‧‧‧Electronic beam source
31‧‧‧transmitter
32‧‧‧beam aggregator
60‧‧‧Magnetic lens elements
62‧‧‧ coil
63‧‧‧ pole piece
64‧‧‧ pole piece
100‧‧‧ Equipment
110‧‧‧Substrate support
120‧‧‧vacuum room
121‧‧‧ Inner width
121'‧‧‧ Inner width
122‧‧‧ wall
123‧‧‧ wall
130‧‧‧First Imaging Charged Particle Beam Microscope
131‧‧‧First optical axis
135‧‧‧ distance
140‧‧‧Second Imaging Charged Particle Beam Microscope
141‧‧‧second optical axis
150‧‧‧x direction
151‧‧‧z direction
152‧‧‧y direction
160‧‧‧Substrate
210‧‧‧Substrate receiving area
220‧‧‧Width
410‧‧‧displacement unit
420‧‧‧vacuum pump
430‧‧‧Connecting Department
431‧‧‧ Shock absorber
432‧‧‧First coupling
433‧‧‧Second coupling
440‧‧‧ pneumatic components
441‧‧‧ feet
450‧‧‧Vibration sensor
470‧‧‧Strength
500‧‧‧ charged particle beam device
510‧‧‧ biased unit
512‧‧‧ biased unit
513‧‧‧ Wien filter
520‧‧‧focus lens
530‧‧‧ lower electrode
531‧‧‧Power supply
540‧‧‧Two-stage bias system
550‧‧‧beam limiting aperture
560‧‧‧ Objective lens
561‧‧‧Magnetic lens elements
562‧‧‧Upper electrode
570‧‧‧Scanning deflector assembly
580‧‧·beam splitter
592‧‧‧beam bender
594‧‧‧ lens
596‧‧‧Filter
598‧‧ Detector
610‧‧‧First charged particle beam
611‧‧‧First beam position
620‧‧‧Second charged particle beam
621‧‧‧second beam position
630‧‧‧beam distance
650‧‧‧ distance
690‧‧‧dotted line
710‧‧‧y coordinates
720‧‧‧first y coordinates
721‧‧‧second y coordinate
722‧‧‧First projection axis
723‧‧‧second projection axis
724‧‧‧ Center
725‧‧ Center
730‧‧‧y coordinates
740‧‧‧second y coordinate
741‧‧‧ first y coordinate
750‧‧‧The third imaging charged particle beam microscope
760‧‧‧Fourth Imaging Charged Particle Beam Microscope
761‧‧‧ distance
762‧‧‧ distance
770‧‧‧ size
781‧‧‧distance
782‧‧‧ distance
783‧‧‧distance
810‧‧‧ substrate width
820‧‧‧First District
821‧‧‧first width
822‧‧‧ first defect
830‧‧‧Second District
831‧‧‧second width
832‧‧‧ second defect
900‧‧‧Imaged charged particle beam microscope
902‧‧‧ box
904‧‧‧ box
910‧‧‧dotted line

在接下來的說明書，包含對於所附圖式的參照中，將更詳盡地提出完整且使得所屬技術領域中具有通常知識者可實行的揭露，其中： 第1圖根據在此所述的實施例示出用於檢查基板之一設備的側視圖。 第2和3圖根據在此所述的實施例示出用於檢查基板之一設備的俯視圖。 第4圖示出根據在此所述的實施例的用於檢查基板之一設備的側視圖，其中該設備包含用於減少震動的元件。 第5A圖示出根據在此所述的實施例的一成像帶電粒子束的側視圖。 第5B和5C圖示出傾斜(tilt)於根據在此所述的實施例的一成像帶電粒子束中的一帶電粒子束的示意圖。 第6A~6B圖繪示根據在此所述的實施例的用於檢查基板的一方法。 第7A~7D圖根據在此所述的實施例繪示成像帶電粒子束在一真空室中之不同配置。 第8A~8C圖繪示根據在此所述的實施例的用於檢查基板的一方法。 第9A~9C圖根據在此所述的實施例繪示用於檢查基板的一方法，該方法使用包含單一成像式帶電粒子束顯微鏡的一設備。 第10圖示出一流程圖，繪示參照第6A和6B圖所述之方法。In the following description, including references to the drawings, the disclosure will be more fully described and made available to those of ordinary skill in the art, wherein: FIG. 1 is illustrated in accordance with the embodiments described herein. A side view of the device for inspecting one of the substrates. 2 and 3 show top views of one of the devices for inspecting a substrate in accordance with embodiments described herein. Figure 4 illustrates a side view of an apparatus for inspecting a substrate in accordance with an embodiment described herein, wherein the apparatus includes elements for reducing vibration. Figure 5A shows a side view of an imaged charged particle beam in accordance with an embodiment described herein. 5B and 5C illustrate schematic views of a charged particle beam tilted in an imaged charged particle beam in accordance with embodiments described herein. 6A-6B illustrate a method for inspecting a substrate in accordance with embodiments described herein. 7A-7D illustrate different configurations of imaged charged particle beams in a vacuum chamber in accordance with embodiments described herein. 8A-8C illustrate a method for inspecting a substrate in accordance with embodiments described herein. 9A-9C illustrate a method for inspecting a substrate using an apparatus comprising a single imaging charged particle beam microscope in accordance with embodiments described herein. Fig. 10 shows a flow chart showing the method described with reference to Figs. 6A and 6B.

100‧‧‧設備 100‧‧‧ Equipment

110‧‧‧基板支撐件 110‧‧‧Substrate support

120‧‧‧真空室 120‧‧‧vacuum room

121‧‧‧內寬 121‧‧‧ Inner width

122‧‧‧牆壁 122‧‧‧ wall

123‧‧‧牆壁 123‧‧‧ wall

130‧‧‧第一成像式帶電粒子束顯微鏡 130‧‧‧First Imaging Charged Particle Beam Microscope

131‧‧‧第一光軸 131‧‧‧First optical axis

135‧‧‧距離 135‧‧‧ distance

140‧‧‧第二成像式帶電粒子束顯微鏡 140‧‧‧Second Imaging Charged Particle Beam Microscope

141‧‧‧第二光軸 141‧‧‧second optical axis

150‧‧‧x方向 150‧‧‧x direction

151‧‧‧z方向 151‧‧‧z direction

160‧‧‧基板 160‧‧‧Substrate

Claims (20)

一種用於檢查用於顯示器製造之大面積之一基板的設備，該設備包括： 一真空室； 一基板支撑件，配置在該真空室中，其中該基板支撑件係配置成用於支撐用於顯示器製造之大面積之該基板；以及 一第一成像式帶電粒子束顯微鏡，配置成用於產生用於檢查由該基板支撑件所支撐之一基板的一帶電粒子束，其中該第一成像式帶電粒子束顯微鏡包括： 一物鏡之一減速電場透鏡元件。An apparatus for inspecting a substrate of a large area for display manufacturing, the apparatus comprising: a vacuum chamber; a substrate support disposed in the vacuum chamber, wherein the substrate support is configured for support for a large area of the substrate fabricated by the display; and a first imaged charged particle beam microscope configured to generate a charged particle beam for inspecting a substrate supported by the substrate support, wherein the first imaged image The charged particle beam microscope comprises: a decelerating electric field lens element of an objective lens. 如申請專利範圍第1項所述之設備，更包括： 一真空產生裝置和一減震器，該減震器提供在該真空產生裝置和該真空室之間的一連接部或該連接部中。The apparatus of claim 1, further comprising: a vacuum generating device and a shock absorber, wherein the shock absorber is provided in a connection portion or the connecting portion between the vacuum generating device and the vacuum chamber . 如申請專利範圍第1或2項所述之設備，更包括一或更多的強化條，配置在該真空室或該真空室中，其中該強化條係適用於結構性地強化該真空室以減少震動。The apparatus of claim 1 or 2, further comprising one or more reinforcing strips disposed in the vacuum chamber or the vacuum chamber, wherein the reinforcing strip is adapted to structurally strengthen the vacuum chamber Reduce vibration. 如申請專利範圍第1或2項所述之設備，更包括： 一或更多的氣動元件，其中該真空室係固定在該一或更多的氣動元件上。The apparatus of claim 1 or 2, further comprising: one or more pneumatic components, wherein the vacuum chamber is secured to the one or more pneumatic components. 如申請專利範圍第1或2項所述之設備，更包括： 一隔音屏障，適用於屏蔽該真空室不受聲音的震動影響。The device of claim 1 or 2, further comprising: a noise barrier adapted to shield the vacuum chamber from vibrations of sound. 如申請專利範圍第1或2項所述之設備，更包括： 一震動感測器，其中該震動感測器係適用於量測影響該第一成像式帶電粒子束顯微鏡和該基板支撑件之間之一相對位置的震動。The device of claim 1 or 2, further comprising: a vibration sensor, wherein the vibration sensor is adapted to measure the first imaged charged particle beam microscope and the substrate support The vibration of one of the relative positions. 如申請專利範圍第1或2項所述之設備，其中該真空室係由選自由下列選項所組成之群組的至少一種材料的複數強化結構製成或具有該些強化結構：碳鋼和礦物鑄件。The apparatus of claim 1 or 2, wherein the vacuum chamber is made of or has a plurality of reinforcing structures selected from the group consisting of: carbon steel and minerals casting. 如申請專利範圍第1或2項所述之設備，其中該基板支撑件提供一基板接收區，該基板接收區具有沿著一第一方向的一第一接收區尺寸，該設備更包括： 一第二成像式帶電粒子束顯微鏡，沿著該第一方向從該第一成像式帶電粒子束顯微鏡具有一距離，該距離為該第一接收區尺寸的30%到70%，或該距離為30公分或更長。The device of claim 1 or 2, wherein the substrate support member provides a substrate receiving area having a first receiving area size along a first direction, the device further comprising: a second imaged charged particle beam microscope having a distance from the first imaged charged particle beam microscope along the first direction, the distance being 30% to 70% of the size of the first receiving region, or the distance being 30 Centimeters or longer. 一種用於檢查一基板的設備，該設備包括： 一真空室； 一基板支撑件，配置在該真空室中，其中該基板支撑件提供一基板接收區，該基板接收區具有沿著一第一方向的一第一接收區尺寸；以及 一第一成像式帶電粒子束顯微鏡和一第二成像式帶電粒子束顯微鏡，沿著該第一方向具有一距離，該距離為該第一接收區尺寸的30%到70%。An apparatus for inspecting a substrate, the apparatus comprising: a vacuum chamber; a substrate support disposed in the vacuum chamber, wherein the substrate support provides a substrate receiving area, the substrate receiving area having a first a first receiving region size of the direction; and a first imaged charged particle beam microscope and a second imaged charged particle beam microscope having a distance along the first direction, the distance being the size of the first receiving region 30% to 70%. 如申請專利範圍第9項所述之設備，其中該真空室具有沿著該第一方向的一第一內部尺寸，該第一內部尺寸為沿著該第一方向的該第一接收區尺寸的150%到180%。The apparatus of claim 9, wherein the vacuum chamber has a first inner dimension along the first direction, the first inner dimension being a size of the first receiving zone along the first direction 150% to 180%. 如申請專利範圍第9或10項所述之設備，其中該第二成像式帶電粒子束顯微鏡係從該第一成像式帶電粒子束顯微鏡相距沿著該第一方向至少30公分的一距離。The apparatus of claim 9 or 10, wherein the second imaged charged particle beam microscope is spaced from the first imaged charged particle beam microscope by a distance of at least 30 centimeters along the first direction. 如申請專利範圍第9或10項所述之設備，更包括： 一x射線探測器，配置成用以分析從大面積之該基板所發射的x射線。The apparatus of claim 9 or 10, further comprising: an x-ray detector configured to analyze x-rays emitted from the large area of the substrate. 如申請專利範圍第1、2、9或10項所述之設備，更適用以傾斜該帶電粒子束，使得該帶電粒子束在一預定的傾斜射束著陸角度下衝擊在該基板上。The apparatus of claim 1, 2, 9 or 10 is further adapted to tilt the charged particle beam such that the charged particle beam impinges on the substrate at a predetermined oblique beam landing angle. 如申請專利範圍第13項所述之設備，其中至少該第一成像式帶電粒子束顯微鏡係適用以被傾斜，使得該帶電粒子束在該預定的傾斜射束著陸角度下衝擊在該基板上。The apparatus of claim 13, wherein at least the first imaged charged particle beam microscope is adapted to be tilted such that the charged particle beam impinges on the substrate at the predetermined oblique beam landing angle. 如申請專利範圍第13項所述之設備，更包括一偏向單元，適用以傾斜該帶電粒子束，使得該帶電粒子束在該預定的傾斜射束著陸角度下衝擊在該基板上。The apparatus of claim 13 further comprising a biasing unit adapted to tilt the charged particle beam such that the charged particle beam impinges on the substrate at the predetermined oblique beam landing angle. 如申請專利範圍第15項所述之設備，其中該偏向單元包括一透鏡前偏向單元和一透鏡內偏向單元。The apparatus of claim 15, wherein the biasing unit comprises a lens front deflection unit and an in-lens deflection unit. 如申請專利範圍第1、2、9或10項所述之設備，更包括： 一x射線探測器，配置成用以分析大面積之該基板的一化學組成。The apparatus of claim 1, 2, 9 or 10, further comprising: an x-ray detector configured to analyze a chemical composition of the substrate over a large area. 一種用於檢查用於顯示器製造之大面積之一基板的方法，該方法包括： 提供大面積之該基板在一真空室中；以及 以一第一成像式帶電粒子束顯微鏡產生一第一帶電粒子束，其中該第一帶電粒子束以2 keV或更低的一著陸能量衝擊在該基板上。A method for inspecting a substrate of a large area for display manufacturing, the method comprising: providing a large area of the substrate in a vacuum chamber; and generating a first charged particle by a first imaged charged particle beam microscope a beam, wherein the first charged particle beam impinges on the substrate with a landing energy of 2 keV or less. 如申請專利範圍第18項所述之方法，其中該第一帶電粒子束於一第一射束位置衝擊在該基板上，該方法更包括： 以一第二成像式帶電粒子束顯微鏡產生一第二帶電粒子束，其中該第二帶電粒子束在2 keV或更低的一著陸能量於一第二射束位置衝擊在該基板上， 其中該第一射束位置沿著一第一方向從該第二射束位置相距一射束距離，該射束距離至少30公分。The method of claim 18, wherein the first charged particle beam impinges on the substrate at a first beam position, the method further comprising: generating a first image by a second charged charged particle beam microscope a charged particle beam, wherein the second charged particle beam impinges on the substrate at a second beam position at a landing energy of 2 keV or less, wherein the first beam position is along the first direction The second beam position is a beam distance that is at least 30 centimeters apart. 如申請專利範圍第18或19項所述之方法，其中沿著該第一方向的一第一基板位置係在該第一射束位置成像，沿著該第一方向的一第二基板位置係在該第二射束位置成像，且其中該第一基板位置和該第二基板位置沿著該第一方向的距離為沿著該第一方向之一基板寬度的40%或更多。The method of claim 18 or 19, wherein a first substrate position along the first direction is imaged at the first beam position, and a second substrate position along the first direction is Imaging at the second beam position, and wherein the distance between the first substrate position and the second substrate position along the first direction is 40% or more of a substrate width along the first direction.
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