TW201624556A - Surface processing apparatus - Google Patents
Surface processing apparatus Download PDFInfo
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- TW201624556A TW201624556A TW104131604A TW104131604A TW201624556A TW 201624556 A TW201624556 A TW 201624556A TW 104131604 A TW104131604 A TW 104131604A TW 104131604 A TW104131604 A TW 104131604A TW 201624556 A TW201624556 A TW 201624556A
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- Prior art keywords
- turning tool
- turning
- polishing pad
- wafer
- holding
- Prior art date
Links
- 238000005498 polishing Methods 0.000 claims abstract description 119
- 238000000227 grinding Methods 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims description 22
- 238000007517 polishing process Methods 0.000 claims description 8
- 238000003754 machining Methods 0.000 abstract description 18
- 235000012431 wafers Nutrition 0.000 abstract 3
- 239000007788 liquid Substances 0.000 description 16
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000009434 installation Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000006261 foam material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Milling, Broaching, Filing, Reaming, And Others (AREA)
Abstract
Description
本發明是有關於具有對晶圓表面施加車刀的旋削加工及研磨加工之功能的表面加工裝置。 The present invention relates to a surface processing apparatus having a function of performing a turning process and a grinding process on a wafer surface.
IC等元件因為是在晶圓的表面上製作，因此當晶圓表面上有凹凸時，就會有在晶圓表面形成薄膜的步驟中的被覆性惡化、或由於配線斷線而導致成品率降低、或在配線膜發生落差而導致信賴性降低之問題產生。又，當晶圓表面上有凹凸時，則在微影(lithography)步驟中，會因為產生光阻膜厚度差，或在曝光時焦點距離變動，而使細微圖案的解像變困難。特別是邏輯類IC，由於需要多層配線，因此會要求表面落差的平坦化精度。於是，被製成元件前的晶圓，會將其表面研磨而形成平坦化。 Since an element such as an IC is formed on the surface of the wafer, when there are irregularities on the surface of the wafer, the coating property in the step of forming a thin film on the surface of the wafer is deteriorated, or the yield is lowered due to disconnection of the wiring. Or, there is a problem that the wiring film is dropped and the reliability is lowered. Further, when there are irregularities on the surface of the wafer, in the lithography step, the resolution of the fine pattern is difficult due to the difference in the thickness of the photoresist film or the change in the focal length during exposure. In particular, logic ICs require planarization accuracy due to the need for multilayer wiring. Thus, the wafer before being formed into a component will be ground and planarized.
在具有貫通電極之TSV(Through Silicon Via)的TSV晶圓上，雖然藉由磨削及CMP(化學機械研磨)而將背面平坦化，並藉由CMP而將露出於表面側的貫通電極平坦化，但是近年來，因為貫通電極已由鋁配線改換為銅配線，因此會藉由車刀的旋削及CMP來將貫通電極平坦化。關於藉 由CMP以研磨晶圓表面的技術，已記載於例如專利文獻1。進行車刀的旋削之裝置，已記載於例如專利文獻2、3。 On a TSV wafer having a through-ion TSV (Through Silicon Via), the back surface is flattened by grinding and CMP (Chemical Mechanical Polishing), and the through electrode exposed on the surface side is planarized by CMP However, in recent years, since the through electrode has been changed from the aluminum wiring to the copper wiring, the through electrode is flattened by the turning of the turning tool and the CMP. About borrowing A technique for polishing the surface of a wafer by CMP is described, for example, in Patent Document 1. An apparatus for turning a turning tool is described in, for example, Patent Documents 2 and 3.
又，如電阻、閘流電晶體(thyristor)、電感之類的含有金屬及樹脂的元件，由於在藉由磨削進行的平坦化上容易在磨削磨石上產生切屑堵塞，因此在進行車刀的旋削後，會藉由乾式拋光(不使用藥劑的乾式研磨)來進行鏡面拋光。 Further, elements such as resistors, thyristors, and inductors containing metals and resins are susceptible to chip clogging on the grinding stone due to flattening by grinding, so that turning tools are performed. After the turning, the mirror polishing is performed by dry polishing (dry grinding without using a chemical).
專利文獻1：日本專利特開2012-209568號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2012-209568
專利文獻2：日本專利特開2009-54920號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2009-54920
專利文獻3：日本專利特開2007-59524號公報 Patent Document 3: Japanese Patent Laid-Open Publication No. 2007-59524
然而，由於車刀的旋削及CMP或乾式拋光是在各別的裝置上進行，所以必須在裝置間搬送晶圓，而有使生產性降低的問題。 However, since the turning of the turning tool and the CMP or dry polishing are performed on separate devices, it is necessary to transport the wafer between the devices, which has a problem of lowering productivity.
本發明是有鑑於這類的問題而作成的發明，其課題是在對晶圓施行車刀的旋削與CMP或乾式拋光時，使生產性提高。 The present invention has been made in view of such problems, and an object of the invention is to improve productivity in performing turning, CMP or dry polishing of a wafer.
本發明的表面加工裝置具備：具有保持晶圓背面的保持面之保持手段、可對藉由保持手段所保持的晶圓的 表面進行車刀的旋削加工及研磨墊的研磨加工之加工手段、以及將保持手段至少定位在加工手段之加工位置上的加工移動手段。加工手段具備：車刀加工手段，以相對於保持面在垂直方向上延伸的旋轉軸為軸來使該車刀繞轉；研磨手段，使研磨墊以旋轉軸為軸而旋轉，該研磨墊具有比車刀加工手段使車刀繞轉之繞轉軌道還小的外徑；進退手段，使車刀及研磨墊朝相對於保持面接近及遠離的方向相對地移動；以及切換控制部，控制進退手段，以在使用了車刀的旋削加工時，讓研磨墊相較於車刀朝更遠離保持面的方向移動，並在使用了研磨墊的研磨加工時，讓車刀相較於研磨墊朝更遠離保持面的方向移動。 The surface processing apparatus of the present invention includes: a holding means for holding a holding surface on the back surface of the wafer, and a wafer which can be held by the holding means The surface is subjected to a turning process of the turning tool and a grinding process of the polishing pad, and a machining moving means for positioning the holding means at least at the processing position of the processing means. The processing means includes: a turning tool processing means, the turning tool is rotated about a rotating shaft extending in a vertical direction with respect to the holding surface; and the grinding means rotates the polishing pad with the rotating shaft as an axis, the polishing pad has The outer diameter of the orbit is smaller than that of the turning tool; the advancing and retreating means relatively moves the turning tool and the polishing pad toward and away from the holding surface; and the switching control unit controls the advance and retreat The method is to move the polishing pad in a direction away from the holding surface compared to the turning tool when the turning tool is used, and to make the turning tool face the polishing pad when the polishing pad is used Move farther away from the holding surface.
車刀加工手段及研磨手段亦可做成各自具備使車刀旋轉的車刀旋轉手段及使研磨墊旋轉的墊旋轉手段，且具有在同一軸線上之車刀旋轉手段的旋轉軸與墊旋轉手段的旋轉軸之構成。 The turning tool processing means and the polishing means may be provided with a turning means for rotating the turning tool and a pad rotating means for rotating the polishing pad, and the rotating shaft and the pad rotating means having the turning means of the turning tool on the same axis The composition of the rotating shaft.
本發明之表面加工裝置，在切換控制部的控制下，進退手段可使車刀及研磨墊朝相對於保持面接近及遠離的方向相對地移動，因此可以選擇地使車刀及研磨墊的任一個作用在晶圓的表面上而進行加工。因此，成為可在1個裝置上進行車刀的切削加工及研磨墊的研磨加工，且也不需要在裝置間搬送晶圓，因而使生產性提升。 According to the surface processing apparatus of the present invention, the advance and retract means can relatively move the turning tool and the polishing pad in a direction approaching and away from the holding surface under the control of the switching control unit. Therefore, the turning tool and the polishing pad can be selectively selected. One is applied to the surface of the wafer for processing. Therefore, it is possible to perform the cutting process of the turning tool and the polishing process of the polishing pad on one device, and it is not necessary to transfer the wafer between the devices, thereby improving productivity.
又，當使車刀加工手段及研磨手段做成各自具備使車刀旋轉的車刀旋轉手段及使研磨墊旋轉的墊旋轉手段，並在同一軸線上具有車刀旋轉手段的旋轉軸與墊旋轉手段的旋轉軸之構成時，在車刀之旋削加工中就不會使研磨墊旋轉，且在研磨墊之研磨加工中就不會使車刀旋轉，因此不會有旋轉中的工具(車刀或研磨墊)受到另一個工具之旋轉的振動影響之情形。 Further, the turning tool processing means and the polishing means are provided with a turning tool for rotating the turning tool and a pad rotating means for rotating the polishing pad, and the rotating shaft and the pad rotating with the turning means of the turning tool on the same axis In the configuration of the rotating shaft of the tool, the polishing pad is not rotated during the turning process of the turning tool, and the turning tool is not rotated during the polishing process of the polishing pad, so that there is no rotating tool (turning tool) Or the case where the polishing pad is affected by the vibration of the rotation of another tool.
1、10、10a‧‧‧表面加工裝置 1,10,10a‧‧‧ surface processing equipment
20‧‧‧保持手段 20‧‧‧Retention means
21‧‧‧保持面 21‧‧‧ Keep face
22‧‧‧加工移動手段 22‧‧‧Processing means of movement
23、61、71‧‧‧滾珠螺桿 23, 61, 71‧‧‧ ball screw
13、24、46、63、73‧‧‧馬達 13, 24, 46, 63, 73‧‧ ‧ motors
25、62、72‧‧‧導軌 25, 62, 72‧ ‧ rails
26‧‧‧移動基台 26‧‧‧Mobile abutments
27‧‧‧加工位置 27‧‧‧Processing position
8、9、30‧‧‧加工手段 8, 9, 30‧ ‧ processing methods
40‧‧‧車刀加工手段 40‧‧‧ turning tools
41‧‧‧第1主軸 41‧‧‧1st spindle
41a、51a‧‧‧軸承 41a, 51a‧‧‧ Bearings
14、42、52、90‧‧‧安裝座 14, 42, 52, 90‧‧‧ Mounts
43‧‧‧基台 43‧‧‧Abutment
44、161‧‧‧車刀 44,161‧‧‧ turning tools
45‧‧‧車刀旋轉手段 45‧‧‧ turning tool
47‧‧‧軸部 47‧‧‧Axis
48‧‧‧驅動帶 48‧‧‧ drive belt
49‧‧‧旋轉軸 49‧‧‧Rotary axis
49a‧‧‧驅動帶輪 49a‧‧‧Drive pulley
49b‧‧‧從動帶輪 49b‧‧‧ driven pulley
50‧‧‧研磨手段 50‧‧‧ grinding means
51‧‧‧第2主軸 51‧‧‧2nd spindle
53、171‧‧‧研磨墊 53,171‧‧‧ polishing pad
54‧‧‧墊旋轉手段 54‧‧‧pad rotation means
55‧‧‧研磨液供給口 55‧‧‧Slurry supply port
56‧‧‧研磨液吐出口 56‧‧‧Slurry discharge
57‧‧‧研磨液流通路 57‧‧‧Dry flow path
15、60、91‧‧‧進退手段 15, 60, 91‧‧‧ advance and retreat means
64、74‧‧‧升降部 64, 74‧‧‧ Lifting Department
65、86、86a‧‧‧切換控制部 65, 86, 86a‧‧‧Switch Control Department
70‧‧‧加工進給手段 70‧‧‧Processing means of feeding
11‧‧‧主軸 11‧‧‧ Spindle
12‧‧‧主軸殼體 12‧‧‧ spindle housing
140、900‧‧‧第1裝設部 140, 900‧‧‧1st Installation Department
141、901‧‧‧第2裝設部 141, 901‧‧‧2nd Installation Department
141a‧‧‧抵接部 141a‧‧‧Apartment
92、142‧‧‧旋轉傳達部 92, 142‧‧‧ Rotating Communication Department
150、910‧‧‧活塞 150, 910‧‧ ‧ piston
151、911‧‧‧汽缸 151, 911 ‧ ‧ cylinder
16‧‧‧旋削工具 16‧‧‧Rotary tools
160‧‧‧第1基台 160‧‧‧1st abutment
17‧‧‧研磨工具 17‧‧‧ grinding tools
170‧‧‧第2基台 170‧‧‧2nd abutment
18‧‧‧溝 18‧‧‧ditch
19a、93‧‧‧第1定位部 19a, 93‧‧‧1st positioning department
19b、94‧‧‧第2定位部 19b, 94‧‧‧2nd positioning department
81、81a‧‧‧第1流路 81, 81a‧‧‧1st flow path
82、82a‧‧‧第1供給口 82, 82a‧‧‧1st supply port
83、83a‧‧‧第2流路 83, 83a‧‧‧2nd flow path
84、84a‧‧‧第2供給口 84, 84a‧‧‧2nd supply port
85、85a‧‧‧空氣供給源 85, 85a‧‧ Air supply source
860、860a‧‧‧切換閥 860, 860a‧‧‧ switching valve
861、861a‧‧‧旋轉接頭 861, 861a‧‧‧ rotary joint
900a‧‧‧第1裝設部的下表面 900a‧‧‧The lower surface of the first installation
900b‧‧‧第1裝設部的上表面 900b‧‧‧ Upper surface of the first installation
902‧‧‧貫通孔 902‧‧‧through hole
W‧‧‧晶圓 W‧‧‧ wafer
W1‧‧‧表面 W1‧‧‧ surface
W2‧‧‧背面 W2‧‧‧ back
X、Y、Z‧‧‧方向 X, Y, Z‧‧ Direction
圖1是顯示在第1實施形態的表面加工裝置上可研磨加工之狀態的立體圖。 Fig. 1 is a perspective view showing a state in which the surface processing apparatus according to the first embodiment can be polished.
圖2是顯示在第1實施形態的表面加工裝置上研磨晶圓之狀態的縱剖面圖。 Fig. 2 is a vertical cross-sectional view showing a state in which a wafer is polished in the surface processing apparatus of the first embodiment.
圖3是顯示在第1實施形態的表面加工裝置上可旋削加工之狀態的立體圖。 Fig. 3 is a perspective view showing a state in which the surface processing apparatus according to the first embodiment can be turned into a grinding process.
圖4是顯示在第1實施形態的表面加工裝置上旋削晶圓之狀態的縱剖面圖。 4 is a longitudinal cross-sectional view showing a state in which a wafer is turned on in the surface processing apparatus according to the first embodiment.
圖5是概略地顯示在第2實施形態的表面加工裝置上旋削晶圓之狀態的剖面圖。 Fig. 5 is a cross-sectional view schematically showing a state in which a wafer is turned on in the surface processing apparatus of the second embodiment.
圖6是概略地顯示在第2實施形態的表面加工裝置上研磨晶圓之狀態的剖面圖。 Fig. 6 is a cross-sectional view schematically showing a state in which a wafer is polished in the surface processing apparatus of the second embodiment.
圖7是概略地顯示在第3實施形態的表面加工裝置上旋削晶圓之狀態的剖面圖。 Fig. 7 is a cross-sectional view schematically showing a state in which a wafer is rotated on a surface processing apparatus according to a third embodiment.
圖8是概略地顯示在第3實施形態的表面加工裝置上研磨晶圓之狀態的剖面圖。 Fig. 8 is a cross-sectional view schematically showing a state in which a wafer is polished in the surface processing apparatus of the third embodiment.
1 第1實施形態 1 first embodiment
圖1所示之表面加工裝置1具備有：具有保持晶圓之背面W2的保持面21之保持手段20、可對由保持手段20所保持的晶圓W的表面W1進行車刀44的旋削加工及研磨墊53的研磨加工之加工手段30、以及將保持手段20至少定位在加工手段30的加工位置27之加工移動手段22。 The surface processing apparatus 1 shown in FIG. 1 includes a holding means 20 having a holding surface 21 for holding the back surface W2 of the wafer, and can perform turning processing of the turning tool 44 on the surface W1 of the wafer W held by the holding means 20. The processing means 30 for polishing the polishing pad 53 and the processing moving means 22 for positioning the holding means 20 at least at the processing position 27 of the processing means 30.
保持手段20是形成為可藉由加工移動手段22而被驅動以在表面研磨裝置1的前後方向(Y軸方向)上移動。加工移動手段22具備有具有Y軸方向之軸心的滾珠螺桿23、轉動滾珠螺桿23的馬達24、與滾珠螺桿24平行地配置的一對導軌25、以及在內部具有與滾珠螺桿24螺合之螺帽並且使下部滑動接觸於導軌25的移動基台26，並形成為藉由馬達24轉動滾珠螺桿23以使移動基台26被導軌25導引而在Y軸方向上移動之構成。在移動基台26上固定有保持手段20，當使移動基台26在Y軸方向上移動時，保持手段20也會朝同方向移動。加工移動手段22可使保持手段20在Y軸方向上移動而定位到加工位置27上。 The holding means 20 is formed to be movable by the machining moving means 22 to move in the front-rear direction (Y-axis direction) of the surface grinding apparatus 1. The machining moving means 22 includes a ball screw 23 having a shaft center in the Y-axis direction, a motor 24 that rotates the ball screw 23, a pair of guide rails 25 that are disposed in parallel with the ball screw 24, and a screw that is screwed into the ball screw 24 therein. The nut also slides the lower portion into contact with the moving base 26 of the guide rail 25, and is formed to rotate the ball screw 23 by the motor 24 to guide the moving base 26 by the guide rail 25 to move in the Y-axis direction. The holding means 20 is fixed to the moving base 26, and when the moving base 26 is moved in the Y-axis direction, the holding means 20 also moves in the same direction. The machining moving means 22 can move the holding means 20 in the Y-axis direction to be positioned on the processing position 27.
加工手段30具備有車刀加工手段40、研磨手段50、以及使車刀44和研磨墊53朝相對於保持面21接近及遠離的方向相對地進退的進退手段60。 The processing means 30 includes a turning tool 40, a polishing means 50, and an advancing and retracting means 60 for causing the turning tool 44 and the polishing pad 53 to advance and retreat in a direction approaching and away from the holding surface 21.
車刀加工手段40具備有具有Z軸方向之軸心的第1主軸41、連結於第1主軸41的下部的安裝座42、安裝於 安裝座42的基台43、安裝於基台43下部的車刀44、以及使基台43旋轉而使車刀44繞轉的車刀旋轉手段45。 The turning tool 40 includes a first main shaft 41 having an axial center in the Z-axis direction, a mounting base 42 coupled to a lower portion of the first main shaft 41, and a mounting portion 42 attached thereto. The base 43 of the mount 42 and the turning tool 44 attached to the lower portion of the base 43 and the turning tool 45 for rotating the base 43 to rotate the turning tool 44 are provided.
車刀旋轉手段45具備有馬達46、由馬達46驅動而以Z軸方向的旋轉軸為中心旋轉的軸部47、以及捲繞在軸部47及第1主軸41上的驅動帶48。在車刀旋轉手段45上，當馬達46使軸部47旋轉後，即可藉由驅動帶48將該旋轉力傳達至第1主軸41，並以相對於保持手段20的保持面21於垂直的方向上延伸的旋轉軸49為軸來使車刀44繞轉。 The turning tool 45 includes a motor 46, a shaft portion 47 that is driven by the motor 46 and rotates around a rotating shaft in the Z-axis direction, and a driving belt 48 that is wound around the shaft portion 47 and the first main shaft 41. In the turning tool 45, when the motor 46 rotates the shaft portion 47, the rotational force can be transmitted to the first main shaft 41 by the driving belt 48, and is perpendicular to the holding surface 21 with respect to the holding means 20. The rotating shaft 49 extending in the direction is a shaft to rotate the turning tool 44.
研磨手段50是由具有Z軸方向之軸心的第2主軸51、連結於第2轉軸51的安裝座52、安裝在安裝座52的研磨墊53、由使第2主軸51旋轉的馬達所形成的墊旋轉手段54、以及使研磨液流入第2主軸51的研磨液供給口55所構成。研磨墊53具有比車刀44的繞轉軌道還小的外徑。作為研磨墊53，可使用的有例如樹脂、不織布、胺甲酸乙酯發泡材等。研磨墊53的下表面宜具有比研磨對象的晶圓W之表面W1的面積還大的面積。 The polishing means 50 is formed of a second main spindle 51 having an axial center in the Z-axis direction, a mounting base 52 coupled to the second rotating shaft 51, a polishing pad 53 attached to the mounting base 52, and a motor rotating the second main shaft 51. The pad rotating means 54 and the polishing liquid supply port 55 for causing the polishing liquid to flow into the second spindle 51 are formed. The polishing pad 53 has a smaller outer diameter than the orbit of the turning tool 44. As the polishing pad 53, for example, a resin, a nonwoven fabric, an urethane foam material or the like can be used. The lower surface of the polishing pad 53 preferably has an area larger than the area of the surface W1 of the wafer W to be polished.
墊旋轉手段54可以在車刀旋轉手段45使車刀44繞轉之繞轉路徑的內側，以與車刀旋轉手段45共通的旋轉軸49為軸來使研磨墊53旋轉。 The pad rotating means 54 can rotate the polishing pad 53 with the turning axis 49 common to the turning tool 45 as an axis on the inside of the winding path in which the turning tool 45 rotates the turning tool 44.
進退手段60具備有具有Z軸方向之軸心的滾珠螺桿61、與滾珠螺桿61平行地配置的一對導軌62、轉動滾珠螺桿61的馬達63、以及在內部具有與滾珠螺桿61螺合的螺帽並且使側部滑動接觸於導軌62的升降部64，且可以藉由馬達63轉動滾珠螺桿61來使升降部64沿導軌62升降。升 降部64保持有墊旋轉手段54，並可以藉由使升降部64升降而使墊旋轉手段54升降。亦即，進退手段60是藉由使墊旋轉手段54升降，而使車刀旋轉45及墊旋轉手段54朝相對於保持手段20的保持面21接近及遠離的方向相對地移動。馬達63上連接有切換控制部65，進退手段60可以藉由切換控制部65的控制來使墊旋轉手段54升降。 The advancing and retracting means 60 includes a ball screw 61 having an axial center in the Z-axis direction, a pair of guide rails 62 arranged in parallel with the ball screw 61, a motor 63 that rotates the ball screw 61, and a screw that is screwed into the ball screw 61 inside. The cap is slidably brought into contact with the lifting portion 64 of the guide rail 62, and the lifting portion 64 can be moved up and down along the guide rail 62 by the motor 63 rotating the ball screw 61. Rise The lower portion 64 holds the pad rotating means 54, and the pad rotating means 54 can be raised and lowered by raising and lowering the lifting portion 64. In other words, the advancing and retracting means 60 moves the turning mechanism 45 and the pad rotating means 54 relatively toward and away from the holding surface 21 of the holding means 20 by raising and lowering the pad rotating means 54. A switching control unit 65 is connected to the motor 63, and the advance/reverse means 60 can raise and lower the pad rotating means 54 by the control of the switching control unit 65.
加工手段30是藉由加工進給手段70驅動而形成可在Z軸方向上升降，加工進給手段70具備有具有Z軸方向之軸心的滾珠螺桿71、與滾珠螺桿71平行地配置的一對導軌72、轉動滾珠螺桿71的馬達73、以及在內部具有與滾珠螺桿71螺合的螺帽並且使側部滑動接觸於導軌72的升降部74，且可以藉由馬達73轉動滾珠螺桿71來使升降部74沿導軌72升降。升降部74保持有加工手段30整體(亦即車刀加工手段40、研磨手段50與進退手段60)，並可以藉由使升降部74升降而使車刀加工手段40、研磨手段50與進退手段60升降。 The machining means 30 is driven by the machining feed means 70 to be movable up and down in the Z-axis direction, and the machining feed means 70 is provided with a ball screw 71 having an axis center in the Z-axis direction and a ball screw 71 arranged in parallel with the ball screw 71. The guide rail 72, the motor 73 that rotates the ball screw 71, and the nut that is screwed into the ball screw 71 inside and slides the side portion into contact with the lift portion 74 of the guide rail 72, and the ball screw 71 can be rotated by the motor 73. The lifting portion 74 is raised and lowered along the guide rail 72. The lifting unit 74 holds the entire processing means 30 (that is, the turning tool processing means 40, the grinding means 50 and the advancing and retracting means 60), and the turning tool processing means 40, the grinding means 50, and the advancing and retreating means can be moved up and down by raising and lowering the elevating portion 74. 60 lifts.
如圖2所示，連結於馬達46上的軸部47上固定有驅動帶輪49a。另一方面，在第1主軸41的外周上固定有從動帶輪49b，並將驅動帶48涵蓋驅動帶輪49a及從動帶輪49b而捲繞。第1主軸41是藉由配置在其外周側的軸承41a而被支撐成可旋轉，並可藉由馬達46使軸部47旋轉，以透過驅動帶輪49a、驅動帶48及從動帶輪49b來使第1主軸41旋轉。 As shown in FIG. 2, a drive pulley 49a is fixed to the shaft portion 47 coupled to the motor 46. On the other hand, the driven pulley 49b is fixed to the outer circumference of the first main shaft 41, and the drive belt 48 is wound around the drive pulley 49a and the driven pulley 49b. The first main spindle 41 is rotatably supported by a bearing 41a disposed on the outer peripheral side thereof, and the shaft portion 47 is rotated by the motor 46 to transmit the drive pulley 49a, the drive belt 48, and the driven pulley 49b. The first spindle 41 is rotated.
車刀44被配置於研磨墊53的外周側。當使第1主軸41旋轉後，車刀44就會在研磨墊53的外周側描繪比研磨 墊53的外周圓更大的圓而繞轉。 The turning tool 44 is disposed on the outer peripheral side of the polishing pad 53. When the first main spindle 41 is rotated, the turning tool 44 is drawn on the outer peripheral side of the polishing pad 53 by grinding. The outer circumference of the pad 53 is rotated by a larger circle.
在第1主軸41與第2主軸51之間有軸承51a介於其間，且軸承51a將第2主軸51支撐成可旋轉。在第2主軸51的內部形成有上端在研磨液供給口55開口而下端在研磨液吐出口56開口的研磨液流通路57。研磨液吐出口56會在形成為環狀的研磨墊53的內周側形成開口。 A bearing 51a is interposed between the first main shaft 41 and the second main shaft 51, and the bearing 51a supports the second main shaft 51 so as to be rotatable. In the second main spindle 51, a polishing liquid flow path 57 whose upper end is opened at the polishing liquid supply port 55 and whose lower end is opened at the polishing liquid discharge port 56 is formed. The polishing liquid discharge port 56 forms an opening on the inner peripheral side of the polishing pad 53 formed in a ring shape.
如圖1所示，加工對象的晶圓W是以使要加工的表面W1朝上方露出的狀態，將背面W2側保持在保持手段20的保持面21上。並且，加工移動手段22可使保持手段20在Y軸方向上移動而將晶圓W定位到加工位置27上。晶圓W有例如具有TSV(Through Silicon Via)的TSV晶圓等。 As shown in FIG. 1, the wafer W to be processed is in a state in which the surface W1 to be processed is exposed upward, and the back surface W2 side is held on the holding surface 21 of the holding means 20. Further, the machining moving means 22 can move the holding means 20 in the Y-axis direction to position the wafer W to the processing position 27. The wafer W has, for example, a TSV wafer having a TSV (Through Silicon Via).
接著，如圖3及圖4所示，在切換控制部65的控制下，進退手段60會使研磨墊53上升而使研磨墊53遠離到比車刀44離保持面21更遠的位置，而形成使車刀44的下端之側位於比研磨墊53的下表面更為下方之狀態。 Next, as shown in FIGS. 3 and 4, under the control of the switching control unit 65, the advance/retract means 60 raises the polishing pad 53 to move the polishing pad 53 away from the holding surface 21 farther than the turning blade 44. The side where the lower end of the turning tool 44 is formed is located below the lower surface of the polishing pad 53.
並且，加工進給手段70會使加工手段30整體下降，而將車刀44的下端定位在晶圓W的表面W1側之預定高度處。之後，車刀旋轉手段45使車刀44繞轉，並且加工移動手段22將保持手段20朝Y軸方向傳送下去。如此一來，則車刀44的下端會削取晶圓W的表面W1而旋削表面W1。當將表面W1整體旋削後，加工進給手段70就會使加工手段30整體上升，並使車刀44從晶圓W的表面W1朝上方遠離而結束旋削加工。藉由所述的旋削加工，在晶圓W是例如TSV晶圓的情況中，可以使TSV前端的高度一致。再者，在車刀44的 旋削加工中，墊旋轉手段54不會使研磨墊53旋轉。 Further, the machining feed means 70 lowers the entire processing means 30, and positions the lower end of the turning tool 44 at a predetermined height on the surface W1 side of the wafer W. Thereafter, the turning tool 45 rotates the turning tool 44, and the machining moving means 22 conveys the holding means 20 in the Y-axis direction. As a result, the lower end of the turning tool 44 cuts the surface W1 of the wafer W and turns the surface W1. When the entire surface W1 is rotated, the machining feed means 70 raises the entire processing means 30, and the turning tool 44 is moved upward from the surface W1 of the wafer W to complete the turning process. According to the above-described turning processing, in the case where the wafer W is, for example, a TSV wafer, the heights of the TSV front ends can be made uniform. Furthermore, in the turning tool 44 In the turning process, the pad rotating means 54 does not rotate the polishing pad 53.
接著，加工移動手段22使保持手段20在Y軸方向上移動而將晶圓W定位到研磨墊53的下方。並且，在切換控制部65的控制下，藉由以進退手段60使研磨墊53下降，以如圖1及圖2所示，使車刀44遠離到比研磨墊53離保持面21更遠的位置，而形成使研磨墊53的下表面位於比車刀44的下端更為下方的狀態。 Next, the machining moving means 22 moves the holding means 20 in the Y-axis direction to position the wafer W below the polishing pad 53. Further, under the control of the switching control unit 65, the polishing pad 53 is lowered by the advancing and retracting means 60, so that the turning tool 44 is moved further away from the holding surface 21 than the polishing pad 53 as shown in Figs. 1 and 2 . The position is such that the lower surface of the polishing pad 53 is located below the lower end of the turning tool 44.
並且，在該狀態下，藉由以墊旋轉手段54使研磨墊53旋轉並且以加工進給手段70使加工手段30下降，以使研磨墊53下降，且使旋轉的研磨墊53接觸於晶圓W的表面W1而按壓，以研磨表面W1。在研磨中，藉由使研磨液從研磨液供給口55流入，並從圖2所示之研磨液吐出口56吐出研磨液，以將研磨液供給至研磨墊53及晶圓W的表面W1之間，並進行化學機械研磨(CMP)。作為研磨液，可使用的是例如二氧化矽(SiO2)、氧化鋁(Al2O3)、氧化鈰(CeO2)、氧化錳(Mn2O3)等。 Further, in this state, the polishing pad 53 is rotated by the pad rotating means 54 and the processing means 30 is lowered by the processing feed means 70 to lower the polishing pad 53 and the rotating polishing pad 53 is brought into contact with the wafer. The surface W1 of W is pressed to polish the surface W1. In the polishing, the polishing liquid is poured from the polishing liquid supply port 55, and the polishing liquid is discharged from the polishing liquid discharge port 56 shown in FIG. 2 to supply the polishing liquid to the polishing pad 53 and the surface W1 of the wafer W. And carry out chemical mechanical polishing (CMP). As the polishing liquid, for example, cerium oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), cerium oxide (CeO 2 ), manganese oxide (Mn 2 O 3 ), or the like can be used.
在研磨中，宜以加工移動手段22使保持手段20在Y軸方向上前後運動。再者，表面加工裝置1上不具備研磨液供給口55、研磨液吐出口56及研磨液流通路57，而以在不供給研磨液之情形下進行之作為研磨的乾式拋光來加工表面W1亦可。 In the grinding, it is preferable to move the holding means 20 back and forth in the Y-axis direction by the machining moving means 22. Further, the surface processing apparatus 1 does not include the polishing liquid supply port 55, the polishing liquid discharge port 56, and the polishing liquid flow path 57, and the surface W1 is processed by dry polishing as polishing without supplying the polishing liquid. can.
像這樣進行而將表面W1研磨後，加工進給手段70就會使加工手段30上升以使研磨墊53及車刀44遠離晶圓W而結束加工。藉由所述的研磨加工，在晶圓W是例如TSV 晶圓的情況中，可以將TSV的前端平坦化。再者，研磨墊53的旋削加工中，車刀旋轉手段45不會使車刀44旋轉。 When the surface W1 is polished as described above, the processing feed means 70 raises the processing means 30 so that the polishing pad 53 and the turning tool 44 are separated from the wafer W to finish the processing. By the grinding process described above, the wafer W is, for example, a TSV. In the case of a wafer, the front end of the TSV can be flattened. Further, in the turning process of the polishing pad 53, the turning tool 45 does not rotate the turning tool 44.
如上述，在表面加工裝置1上具備車刀加工手段30及研磨手段40，並且可以由進退手段60使車刀44及研磨墊53朝相對於保持面21接近及遠離的方向相對地移動，因此可以選擇地使車刀44及研磨墊53的任一個作用在晶圓W的表面W1上而進行加工。因此，形成可在1個裝置上進行車刀44的旋削加工及研磨墊53的研磨加工，且也不需要在裝置間搬送晶圓，因而使生產性提升。又，車刀旋轉手段45及墊旋轉手段54會使車刀44及研磨墊53以共通的旋轉軸49為軸而旋轉，因此可以將裝置構成做到小型化。此外，因為是將車刀加工手段40及研磨手段50做成各自具備使車刀44旋轉的車刀旋轉手段45及使研磨墊53旋轉的墊旋轉手段54，並在同一軸線上具有車刀旋轉手段45的旋轉軸與墊旋轉手段54的旋轉軸之構成，所以在車刀44之旋削加工中就不會使研磨墊53旋轉，且在研磨墊53之研磨加工中就不會使車刀44旋轉，因此不會有旋轉中的工具(車刀44或研磨墊53)受到另一個工具之旋轉的振動影響的情形。 As described above, the surface processing apparatus 1 is provided with the turning tool processing means 30 and the polishing means 40, and the turning tool 44 and the polishing pad 53 can be relatively moved in the direction of approaching and moving away from the holding surface 21 by the advancing and retracting means 60. Any one of the turning tool 44 and the polishing pad 53 can be selectively applied to the surface W1 of the wafer W for processing. Therefore, it is possible to perform the turning processing of the turning tool 44 and the polishing processing of the polishing pad 53 on one apparatus, and it is not necessary to transport the wafer between the apparatuses, thereby improving productivity. Further, the turning tool 45 and the pad rotating means 54 rotate the turning tool 44 and the polishing pad 53 about the common rotating shaft 49. Therefore, the device configuration can be reduced in size. Further, the turning tool processing means 40 and the polishing means 50 are provided with a turning tool 45 for rotating the turning tool 44 and a pad rotating means 54 for rotating the polishing pad 53, and the turning is performed on the same axis. Since the rotation axis of the means 45 and the rotation axis of the pad rotation means 54 are formed, the polishing pad 53 is not rotated during the turning process of the turning tool 44, and the turning tool 44 is not caused in the polishing process of the polishing pad 53. Rotation, so there is no situation where the rotating tool (turning tool 44 or polishing pad 53) is affected by the vibration of the rotation of the other tool.
再者，在上述第1實施形態中，雖然是做成以進退手段60使墊旋轉手段54升降之構成，但是進退手段60亦可做成使車刀旋轉手段45升降之構成，且也可做成使車刀旋轉手段45及墊旋轉手段54雙方升降之構成。又，加工對象的晶圓不限於TSV晶圓。 Further, in the above-described first embodiment, the pad rotating means 54 is configured to move up and down by the advancing and retracting means 60. However, the advancing and retracting means 60 may be configured to elevate and lower the turning mechanism 45, and may also be The vehicle turning mechanism 45 and the pad rotating means 54 are configured to move up and down. Further, the wafer to be processed is not limited to the TSV wafer.
2 第2實施形態 2 second embodiment
圖5所示之表面加工裝置10是與圖1~4所示之表面加工裝置1同樣地對晶圓的表面進行車刀的旋削加工及研磨墊的研磨加工之裝置。在表面加工裝置10中，與表面加工裝置1同樣地被構成的部位將附加共通的符號並省略其詳細的說明。 The surface processing apparatus 10 shown in FIG. 5 is a device for performing a turning process of a turning tool and a polishing process of a polishing pad on the surface of a wafer in the same manner as the surface finishing apparatus 1 shown in FIGS. In the surface processing apparatus 10, the same components as those of the surface processing apparatus 1 will be denoted by the same reference numerals, and detailed description thereof will be omitted.
表面加工裝置10具備有具有保持晶圓之背面W2的保持面21之保持手段20、以及可對由保持手段20所保持的晶圓W的表面W1進行車刀161的旋削加工和研磨墊171的研磨加工的加工手段8。再者，保持手段20可藉由與圖1所示之加工移動手段22同樣的機構，而定位到加工手段8的加工位置上。 The surface processing apparatus 10 includes a holding means 20 having a holding surface 21 for holding the back surface W2 of the wafer, and a turning processing of the turning tool 161 and the polishing pad 171 for the surface W1 of the wafer W held by the holding means 20. Processing means 8 for grinding processing. Further, the holding means 20 can be positioned at the processing position of the processing means 8 by the same mechanism as the processing moving means 22 shown in FIG.
加工手段8具備有：具有相對於保持面21朝垂直方向延伸之方向的旋轉軸的主軸11、將主軸11支撐成可旋轉的主軸殼體12、連接於主軸11的上端的馬達13、以及在主軸11的下端隔著安裝座14被裝設成同心圓狀的旋削工具16與研磨工具17。 The processing means 8 includes a main shaft 11 having a rotating shaft extending in a direction perpendicular to the holding surface 21, a main shaft housing 12 that supports the main shaft 11 so as to be rotatable, a motor 13 connected to the upper end of the main shaft 11, and The lower end of the main shaft 11 is mounted with a concentric circular turning tool 16 and a grinding tool 17 via a mounting seat 14.
旋削工具16是由環狀的第1基台160、及安裝於第1基台160的下部的車刀161所構成。另一方面，研磨工具17是由具有比第1基台160的內徑小的外徑之圓板狀的第2基台170、以及固接於第2基台170的下表面的研磨墊171所構成。 The turning tool 16 is composed of a ring-shaped first base 160 and a turning tool 161 attached to a lower portion of the first base 160. On the other hand, the polishing tool 17 is a second base 170 having a disk shape having an outer diameter smaller than the inner diameter of the first base 160, and a polishing pad 171 fixed to the lower surface of the second base 170. Composition.
安裝座14具備有用於裝設第1基台160的第1裝設部140、用於裝設第2基台170的第2裝設部141、以及使第1裝設部140與第2裝設部141相對地朝相對於保持手段20的 保持面21接近及遠離的方向移動的進退手段15。 The mount 14 includes a first mounting portion 140 for mounting the first base 160, a second mounting portion 141 for mounting the second base 170, and a first mounting portion 140 and a second mounting The setting portion 141 is opposite to the holding means 20 The advancing and retracting means 15 that moves the surface 21 in a direction approaching and moving away.
進退手段15具備有配置於第1裝設部140的下方並朝相對於工作夾台4接近及遠離的方向移動的活塞150，以及圍繞活塞150並引導活塞150的上下方向之移動的汽缸151。在此活塞150上連接有第2裝設部141。 The advancing and retracting means 15 includes a piston 150 disposed below the first mounting portion 140 and moving in a direction approaching and moving away from the working chuck 4, and a cylinder 151 surrounding the piston 150 and guiding the movement of the piston 150 in the vertical direction. A second mounting portion 141 is connected to the piston 150.
第2裝設部141形成有於其外周緣彎曲成大致呈直角的抵接部141a，抵接部141a上連結有可伴隨著主軸11之旋轉而旋轉的旋轉傳達部142。旋轉傳達部142是以例如銷所構成。 The second mounting portion 141 is formed with an abutting portion 141a bent at a substantially right angle on the outer peripheral edge thereof, and a rotation transmitting portion 142 that is rotatable in association with the rotation of the main shaft 11 is coupled to the abutting portion 141a. The rotation transmitting unit 142 is constituted by, for example, a pin.
在第1裝設部140的下方側形成有可收容第2裝設部141及研磨工具17的空間，並在該空間的最外周部分形成可使抵接部141a朝上下方向滑動的溝18。 A space in which the second mounting portion 141 and the polishing tool 17 can be accommodated is formed on the lower side of the first mounting portion 140, and a groove 18 that can slide the contact portion 141a in the vertical direction is formed in the outermost peripheral portion of the space.
溝18的一端(上端)形成有第1定位部19a，可藉由使抵接部141a抵接於第1定位部19a以使車刀161相較於研磨墊171更朝下方突出來將旋削工具16定位在所期望的位置上。另一方面，溝18的另一端(下端)形成有第2定位部19b，可籍由使抵接部141a抵接於第2定位部19b以使研磨墊171相較於車刀161更朝下方突出來將研磨工具17定位在所期望的位置上。 The first positioning portion 19a is formed at one end (upper end) of the groove 18, and the turning tool can be formed by abutting the abutting portion 141a against the first positioning portion 19a so that the turning tool 161 protrudes downward from the polishing pad 171. 16 is positioned at the desired location. On the other hand, the other end (lower end) of the groove 18 is formed with the second positioning portion 19b, and the abutting portion 141a can be brought into contact with the second positioning portion 19b so that the polishing pad 171 is further downward than the turning tool 161. Prominent to position the abrasive tool 17 in the desired position.
主軸11及安裝座14的內部形成有使空氣供給源85和汽缸151連通的第1流路81與第2流路83。在第1流路81的一端上形成有從汽缸151的側邊側供給空氣的第1供給口82。又，在第2流路83的一端上形成有從汽缸151的上方側供給空氣的第2供給口84。 Inside the main shaft 11 and the mount 14, a first flow path 81 and a second flow path 83 that allow the air supply source 85 and the cylinder 151 to communicate with each other are formed. A first supply port 82 for supplying air from the side of the cylinder 151 is formed at one end of the first flow path 81. Further, a second supply port 84 for supplying air from the upper side of the cylinder 151 is formed at one end of the second flow path 83.
第1流路81及第2流路83和空氣供給源80之間配置有切換汽缸151內的活塞150的行進方向的切換控制部86。切換控制部86具備有將第1供給口82或第2供給口84的任一個切換到空氣供給處之切換閥860、以及用於將空氣供給至旋轉的主軸11內部的旋轉接頭861。並且，當藉由切換控制部86的控制而將空氣供給至第1供給口82時，即可在汽缸151內使活塞150朝相對於保持手段20遠離的方向移動。又，當藉由切換控制部86的控制而將空氣供給至第2供給口84時，即可在汽缸151內使活塞150朝相對於保持手段20接近的方向移動。 A switching control unit 86 that switches the traveling direction of the piston 150 in the cylinder 151 is disposed between the first flow path 81 and the second flow path 83 and the air supply source 80. The switching control unit 86 includes a switching valve 860 that switches one of the first supply port 82 or the second supply port 84 to the air supply position, and a rotary joint 861 that supplies air to the inside of the rotating main shaft 11 . Further, when air is supplied to the first supply port 82 by the control of the switching control unit 86, the piston 150 can be moved in the cylinder 151 in a direction away from the holding means 20. Further, when air is supplied to the second supply port 84 by the control of the switching control unit 86, the piston 150 can be moved in the cylinder 151 in a direction approaching the holding means 20.
接著，說明藉由表面加工裝置10，以相對於晶圓W的表面W1施行車刀161的旋削加工及研磨墊171的研磨加工之動作例。 Next, an example of an operation of performing the turning processing of the turning tool 161 and the polishing processing of the polishing pad 171 with respect to the surface W1 of the wafer W by the surface processing apparatus 10 will be described.
如圖5所示，加工對象的晶圓W是以使要加工的表面W1朝上方露出的狀態，將背面W2側保持在保持手段20的保持面21上。接著，一邊使保持手段20旋轉，一邊使保持手段20在Y軸方向上移動。 As shown in FIG. 5, the wafer W to be processed is in a state in which the surface W1 to be processed is exposed upward, and the back surface W2 side is held on the holding surface 21 of the holding means 20. Next, the holding means 20 is moved in the Y-axis direction while the holding means 20 is rotated.
其次，在切換閥860上使空氣供給源85與第1供給口82連通。藉此，使空氣流入第1流路81而從第1供給口82將空氣供給至汽缸151的內部，並藉由供給至汽缸151內的空氣來使活塞150朝相對於保持手段20遠離的方向移動。隨著活塞150的移動使第2裝設部141上昇，直到抵接部141a抵接於第1定位部19a為止，以使車刀161的下端相較於研磨墊171的下表面更朝下方突出，並相對於晶圓W將可旋削加工 的旋削工具16定位。 Next, the air supply source 85 is communicated with the first supply port 82 on the switching valve 860. Thereby, air is supplied to the first flow path 81, air is supplied from the first supply port 82 to the inside of the cylinder 151, and the piston 150 is moved away from the holding means 20 by the air supplied into the cylinder 151. mobile. The second mounting portion 141 is raised by the movement of the piston 150 until the abutting portion 141a abuts against the first positioning portion 19a, so that the lower end of the turning tool 161 protrudes downward from the lower surface of the polishing pad 171. And can be turned into a wafer relative to the wafer W The turning tool 16 is positioned.
並且，圖1所示之加工進給手段70會使加工手段8整體下降，而將車刀161的下端定位在晶圓W的表面W1側之預定高度處。之後，以馬達131使主軸11旋轉以使車刀161繞轉，並且以圖1所示之加工移動手段22將保持手段20朝Y軸方向傳送下去。如此一來，則車刀161的下端會削取晶圓W的表面W1而旋削表面W1。當將表面W1整體旋削後，加工進給手段70就會使加工手段8整體上升，並使車刀161從晶圓W的表面W1朝上方遠離而結束旋削加工。藉由所述的旋削加工，在晶圓W是例如TSV晶圓的情況中，可以使TSV前端的高度一致。 Further, the machining feed means 70 shown in Fig. 1 lowers the processing means 8 as a whole, and positions the lower end of the turning tool 161 at a predetermined height on the surface W1 side of the wafer W. Thereafter, the spindle 11 is rotated by the motor 131 to rotate the turning tool 161, and the holding means 20 is conveyed in the Y-axis direction by the machining moving means 22 shown in FIG. As a result, the lower end of the turning tool 161 cuts the surface W1 of the wafer W and turns the surface W1. When the entire surface W1 is rotated, the machining feed means 70 raises the entire processing means 8 and moves the turning tool 161 upward from the surface W1 of the wafer W to complete the turning process. According to the above-described turning processing, in the case where the wafer W is, for example, a TSV wafer, the heights of the TSV front ends can be made uniform.
已實施旋削加工後，如圖6所示，可藉由切換控制部86使切換閥860動作，以使空氣供給源85與第2供給口84連通。藉此，使空氣流入第2流路83而從第2供給口84將空氣供給至汽缸151的內部，並藉由供給至汽缸151內的空氣來使活塞150朝相對於保持手段20接近的方向移動。隨著活塞150的移動，可使第2裝設部141下降而使第2裝設部141的抵接部141a抵接於第2定位部19b，藉此使研磨墊171的下表面相較於車刀161的下端更朝下方突出，而將研磨工具17相對於晶圓W定位在可研磨加工的位置上。 After the turning process has been performed, as shown in FIG. 6, the switching valve 860 can be operated by the switching control unit 86 so that the air supply source 85 and the second supply port 84 communicate with each other. Thereby, air is supplied to the second flow path 83, air is supplied from the second supply port 84 to the inside of the cylinder 151, and the piston 150 is brought closer to the holding means 20 by the air supplied into the cylinder 151. mobile. As the piston 150 moves, the second mounting portion 141 can be lowered, and the abutting portion 141a of the second mounting portion 141 can be brought into contact with the second positioning portion 19b, whereby the lower surface of the polishing pad 171 can be compared with The lower end of the turning tool 161 protrudes further downward, and the grinding tool 17 is positioned relative to the wafer W at the position where the grinding process can be performed.
其次，藉著使保持手段20旋轉，並且使主軸11以預定的旋轉速度旋轉，以通過旋轉傳達部142來使研磨工具17旋轉。接著，藉由圖1所示之加工進給手段70使加工手段8朝接近晶圓W的方向下降，而使旋轉的研磨墊171接觸 於晶圓W的表面Wa而按壓，以進行研磨加工。 Next, by rotating the holding means 20 and rotating the main shaft 11 at a predetermined rotational speed, the grinding tool 17 is rotated by the rotation transmitting portion 142. Next, the processing means 8 is lowered toward the wafer W by the processing feed means 70 shown in FIG. 1, and the rotating polishing pad 171 is brought into contact. The surface Wa of the wafer W is pressed to perform a polishing process.
像這樣進行而將表面W1研磨後，加工進給手段70就會使加工手段8上升以使研磨墊171及車刀161遠離晶圓W而結束加工。藉由所述的研磨加工，在晶圓W是例如TSV晶圓的情況中，可以將TSV的前端平坦化。 When the surface W1 is polished as described above, the processing feed means 70 raises the processing means 8 so that the polishing pad 171 and the turning tool 161 are separated from the wafer W to finish the processing. In the case where the wafer W is, for example, a TSV wafer by the above-described polishing process, the front end of the TSV can be flattened.
3 第3實施形態 3 third embodiment
圖7所示之表面加工裝置10a是與圖1~4所示之表面加工裝置1及圖5、6所示之表面加工裝置10同樣地對晶圓的表面進行車刀的旋削加工及研磨墊的研磨加工之裝置。在表面加工裝置10a中，與表面加工裝置1、10同樣地被構成的部位將附加共通的符號並省略其詳細的說明。 The surface processing apparatus 10a shown in FIG. 7 performs turning processing and polishing pad on the surface of the wafer in the same manner as the surface processing apparatus 1 shown in FIGS. 1 to 4 and the surface processing apparatus 10 shown in FIGS. Grinding device. In the surface processing apparatus 10a, the same components as those of the surface processing apparatuses 1 and 10 will be denoted by the same reference numerals, and detailed description thereof will be omitted.
表面加工裝置10a具備有具有保持晶圓之背面W2的保持面21之保持手段20、以及可對由保持手段20所保持的晶圓W的表面W1進行車刀161旋削加工及研磨墊171的研磨加工的加工手段9。再者，保持手段20可藉由與圖1所示之加工移動手段22同樣的機構，而定位到加工手段9的加工位置上。 The surface processing apparatus 10a includes a holding means 20 having a holding surface 21 for holding the back surface W2 of the wafer, and a turning process of the turning tool 161 and polishing of the polishing pad 171 on the surface W1 of the wafer W held by the holding means 20. Processing means 9 for processing. Further, the holding means 20 can be positioned at the processing position of the processing means 9 by the same mechanism as the processing moving means 22 shown in FIG.
加工手段9具備有：具有相對於保持面21朝垂直方向延伸之方向的旋轉軸的主軸11、將主軸11支撐成可旋轉的主軸殼體12、連接於主軸11的上端的馬達13、以及在主軸11的下端隔著安裝座90被裝設成同心圓狀的旋削工具16與研磨工具17。 The processing means 9 includes a main shaft 11 having a rotating shaft extending in a direction perpendicular to the holding surface 21, a main shaft housing 12 that supports the main shaft 11 so as to be rotatable, a motor 13 connected to the upper end of the main shaft 11, and The lower end of the main shaft 11 is attached to the concentric circular turning tool 16 and the grinding tool 17 via the mounting base 90.
旋削工具16是由環狀的第1基台160、及安裝於第1基台160的下部的車刀161所構成。另一方面，研磨工具17 是由具有比第1基台160的內徑小的外徑之圓板狀的第2基台170、以及固接於第2基台170的下表面的研磨墊171所構成。 The turning tool 16 is composed of a ring-shaped first base 160 and a turning tool 161 attached to a lower portion of the first base 160. On the other hand, the grinding tool 17 The second base 170 having a disk shape having an outer diameter smaller than the inner diameter of the first base 160 and the polishing pad 171 fixed to the lower surface of the second base 170 are formed.
安裝座90具備有用於裝設第1基台160的第1裝設部900、用於裝設第2基台170的第2裝設部901、以及使第1裝設部900與第2裝設部901相對地朝相對於保持手段20的保持面21接近及遠離的方向移動的進退手段91。 The mount 90 includes a first mounting portion 900 for mounting the first base 160, a second mounting portion 901 for mounting the second base 170, and a first mounting portion 900 and a second mounting The setting unit 901 relatively moves toward and away from the holding surface 21 of the holding means 20 in the direction of approaching and moving away.
第2裝設部901的上部形成有第1定位部93，藉由使第1裝設部900的下表面900a接觸於第1定位部93，可形成為使車刀161的下端相較於研磨墊171的下表面更朝下方突出而定位。另一方面，在主軸11的下端形成有第2定位部94，藉由使第1裝設部900的上表面900b接觸於第2定位部94，可形成為使研磨墊171的下表面相較於車刀161的下端更朝下方突出而定位。 The first positioning portion 93 is formed in the upper portion of the second mounting portion 901, and the lower surface 900a of the first mounting portion 900 is brought into contact with the first positioning portion 93 so that the lower end of the turning tool 161 can be formed to be polished. The lower surface of the pad 171 is protruded downward to be positioned. On the other hand, the second positioning portion 94 is formed at the lower end of the main shaft 11, and the upper surface 900b of the first mounting portion 900 is brought into contact with the second positioning portion 94 so that the lower surface of the polishing pad 171 can be formed. The lower end of the turning tool 161 protrudes downward and is positioned.
進退手段91具備有配置於第2裝設部901的內部並藉由從空氣供給源85a所傳送的空氣而朝相對於保持手段20接近及遠離的方向移動的活塞910、以及圍繞活塞910並引導活塞910的上下方向之移動的汽缸911。在活塞910上連結有可隨著主軸11旋轉而旋轉並且支撐第1裝設部900的旋轉傳達部92。在汽缸911內藉由使活塞910朝上下方向移動，可以使旋轉傳達部92貫通形成於第2裝設部901的貫通孔902而使旋削工具16升降。 The advancing and retracting means 91 includes a piston 910 disposed inside the second mounting portion 901 and moving in a direction approaching and moving away from the holding means 20 by air transmitted from the air supply source 85a, and guiding around the piston 910 A cylinder 911 that moves in the vertical direction of the piston 910. A rotation transmitting portion 92 that is rotatable with the rotation of the main shaft 11 and supports the first mounting portion 900 is coupled to the piston 910. By moving the piston 910 in the vertical direction in the cylinder 911, the rotation transmitting portion 92 can pass through the through hole 902 formed in the second mounting portion 901 to raise and lower the turning tool 16.
主軸11及安裝座90的內部形成有使空氣供給源25a和汽缸911連通的第1流路81a與第2流路83a。在第1流路 81a的一端上形成有從汽缸911的下方側供給空氣的第1供給口82a。又，在第2流路83a的一端上形成有從汽缸911的上方側供給空氣的第2供給口84a。與加工手段10同樣地，在第1流路81a及第2流路83a和空氣供給源85a之間配置有切換汽缸911內活塞910的行進方向的切換控制部86a。切換控制部86a具備有將第1供給口82a或第2供給口84a的任一個切換到空氣供給處之切換閥860a、以及用於將空氣供給至旋轉的主軸11內部之旋轉接頭861a。 Inside the main shaft 11 and the mount 90, a first flow path 81a and a second flow path 83a that allow the air supply source 25a and the cylinder 911 to communicate with each other are formed. In the first flow path A first supply port 82a for supplying air from the lower side of the cylinder 911 is formed at one end of the 81a. Further, a second supply port 84a for supplying air from the upper side of the cylinder 911 is formed at one end of the second flow path 83a. Similarly to the processing means 10, a switching control unit 86a that switches the traveling direction of the piston 910 in the cylinder 911 is disposed between the first flow path 81a and the second flow path 83a and the air supply source 85a. The switching control unit 86a includes a switching valve 860a that switches one of the first supply port 82a or the second supply port 84a to the air supply, and a rotary joint 861a that supplies air to the inside of the rotating main shaft 11.
使用旋削工具16對晶圓W進行旋削加工時，會如圖7所示，以切換控制部86a使切換閥860動作，以使空氣供給源85a與第2供給口84a連通。藉此，使空氣流入第2流路83a而從第2供給口84a將空氣供給至汽缸911的內部，並藉由供給至汽缸911內的空氣來使活塞910朝相對於保持手段20接近的方向移動。隨著活塞910的移動使第1裝設部900與旋轉傳達部92一起下降，直到第1裝設部900的下表面900a接觸於第1定位部93為止，藉此可使車刀161的下端相較於研磨墊171的下表面更朝下方突出，而將旋削工具16相對於晶圓W定位在可旋削加工的位置上。之後，加工手段9a會透過與上述之加工手段8同樣的動作來對晶圓W進行車刀的旋削。 When the wafer W is turned by the turning tool 16, the switching valve 860 is operated by the switching control unit 86a as shown in Fig. 7, so that the air supply source 85a communicates with the second supply port 84a. Thereby, air is supplied to the second flow path 83a, air is supplied from the second supply port 84a to the inside of the cylinder 911, and the piston 910 is brought closer to the holding means 20 by the air supplied into the cylinder 911. mobile. When the piston 910 moves, the first mounting portion 900 is lowered together with the rotation transmitting portion 92 until the lower surface 900a of the first mounting portion 900 comes into contact with the first positioning portion 93, whereby the lower end of the turning tool 161 can be made. The rotary tool 16 is positioned relative to the wafer W at a position that can be rotated, as compared to the lower surface of the polishing pad 171. Thereafter, the processing means 9a performs turning of the turning tool on the wafer W by the same operation as the above-described processing means 8.
使用研磨工具17對已旋削加工過的晶圓W進行研磨加工時，是如圖8所示，以切換控制部86a使切換閥260動作，以使空氣供給源85a與第1供給口82a連通。藉此，使空氣流入第1流路81a而從第1供給口82a將空氣供給至汽缸 911的內部，並藉由供給至汽缸911內的空氣來使活塞910朝相對於保持手段20遠離的方向移動。隨著活塞910的移動使第1裝設部900與旋轉傳達部92一起上升，直到第1裝設部900的上表面900b接觸於第2定位部94為止，藉此可使研磨墊171的下表面相較於車刀161的下端更朝下方突出，而將研磨工具17相對於晶圓W定位在可研磨加工的位置上。之後，加工手段9會透過與上述之加工手段8同樣的動作來研磨晶圓W。 When the rotary processed wafer W is polished by the polishing tool 17, as shown in FIG. 8, the switching control unit 86a operates the switching valve 260 to allow the air supply source 85a to communicate with the first supply port 82a. Thereby, air is supplied to the first flow path 81a, and air is supplied from the first supply port 82a to the cylinder. The inside of the 911 moves the piston 910 in a direction away from the holding means 20 by the air supplied into the cylinder 911. As the piston 910 moves, the first mounting portion 900 rises together with the rotation transmitting portion 92 until the upper surface 900b of the first mounting portion 900 comes into contact with the second positioning portion 94, whereby the polishing pad 171 can be lowered. The surface protrudes downward more than the lower end of the turning tool 161, and the grinding tool 17 is positioned relative to the wafer W at the position where the grinding process can be performed. Thereafter, the processing means 9 polishes the wafer W by the same operation as the above-described processing means 8.
在上述任一實施形態中，車刀及研磨墊在加工手段中都是分別個別地裝設，因此可將車刀或研磨墊個別地更換。 In any of the above embodiments, the turning tool and the polishing pad are individually mounted in the processing means, so that the turning tool or the polishing pad can be individually replaced.
再者，車刀的繞轉軌道及研磨墊的外側面之間，只要配置圓筒狀的罩蓋，即可防止經由車刀的旋削加工所產生之屑附著於研磨墊上之情形，並且可以防止經由研磨墊的研磨加工所產生之屑附著於車刀上之情形。 Further, between the orbiting track of the turning tool and the outer side surface of the polishing pad, if a cylindrical cover is disposed, it is possible to prevent the debris generated by the turning process of the turning tool from adhering to the polishing pad, and it is possible to prevent The dust generated by the polishing process of the polishing pad adheres to the turning tool.
1‧‧‧表面加工裝置 1‧‧‧Surface processing equipment
20‧‧‧保持手段 20‧‧‧Retention means
21‧‧‧保持面 21‧‧‧ Keep face
22‧‧‧加工移動手段 22‧‧‧Processing means of movement
23、61、71‧‧‧滾珠螺桿 23, 61, 71‧‧‧ ball screw
24、46、63、73‧‧‧馬達 24, 46, 63, 73‧‧ ‧ motor
25、62、72‧‧‧導軌 25, 62, 72‧ ‧ rails
26‧‧‧移動基台 26‧‧‧Mobile abutments
27‧‧‧加工位置 27‧‧‧Processing position
30‧‧‧加工手段 30‧‧‧Processing means
40‧‧‧車刀加工手段 40‧‧‧ turning tools
41‧‧‧第1主軸 41‧‧‧1st spindle
42、52‧‧‧安裝座 42, 52‧‧‧ Mounting
43‧‧‧基台 43‧‧‧Abutment
44‧‧‧車刀 44‧‧‧ turning tools
45‧‧‧車刀旋轉手段 45‧‧‧ turning tool
47‧‧‧軸部 47‧‧‧Axis
48‧‧‧驅動帶 48‧‧‧ drive belt
49‧‧‧旋轉軸 49‧‧‧Rotary axis
50‧‧‧研磨手段 50‧‧‧ grinding means
51‧‧‧第2主軸 51‧‧‧2nd spindle
53‧‧‧研磨墊 53‧‧‧ polishing pad
54‧‧‧墊旋轉手段 54‧‧‧pad rotation means
55‧‧‧研磨液供給口 55‧‧‧Slurry supply port
60‧‧‧進退手段 60‧‧‧Advance and retreat means
64、74‧‧‧升降部 64, 74‧‧‧ Lifting Department
65‧‧‧切換控制部 65‧‧‧Switch Control Department
70‧‧‧加工進給手段 70‧‧‧Processing means of feeding
W‧‧‧晶圓 W‧‧‧ wafer
W1‧‧‧表面 W1‧‧‧ surface
W2‧‧‧背面 W2‧‧‧ back
X、Y、Z‧‧‧方向 X, Y, Z‧‧ Direction
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| JP2014226834A JP2016092281A (en) | 2014-11-07 | 2014-11-07 | Surface machining device |
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|---|---|
| TW201624556A true TW201624556A (en) | 2016-07-01 |
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| KR (1) | KR20160055056A (en) |
| CN (1) | CN105583719A (en) |
| TW (1) | TW201624556A (en) |
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| TWI760551B (en) * | 2017-08-22 | 2022-04-11 | 日商迪思科股份有限公司 | Grinding method |
| TWI814808B (en) * | 2018-04-13 | 2023-09-11 | 日商迪思科股份有限公司 | Grinding device |
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| JP2019198908A (en) * | 2018-05-15 | 2019-11-21 | 株式会社ディスコ | Processing method for synthetic resin plate |
| JP2022052988A (en) | 2020-09-24 | 2022-04-05 | 株式会社ディスコ | Processing device |
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| JP2009054920A (en) * | 2007-08-29 | 2009-03-12 | Disco Abrasive Syst Ltd | Processing method of semiconductor wafer |
| CN201283522Y (en) * | 2008-10-31 | 2009-08-05 | 广东工业大学 | Single face lapping mill |
| JP5455609B2 (en) * | 2009-12-22 | 2014-03-26 | 株式会社ディスコ | Grinding apparatus and wafer grinding method using the grinding apparatus |
| JP5912311B2 (en) * | 2011-06-30 | 2016-04-27 | 株式会社ディスコ | Workpiece grinding method |
| CN103659349A (en) * | 2013-12-30 | 2014-03-26 | 昆明云锗高新技术有限公司 | New technology for machining germanium single crystal wafer |
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| TWI760551B (en) * | 2017-08-22 | 2022-04-11 | 日商迪思科股份有限公司 | Grinding method |
| TWI814808B (en) * | 2018-04-13 | 2023-09-11 | 日商迪思科股份有限公司 | Grinding device |
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| JP2016092281A (en) | 2016-05-23 |
| KR20160055056A (en) | 2016-05-17 |
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