TW201624501A - Conductive pattern, conductive patterned substrate, method of manufacturing conductive patterned substrate, structure having conductive pattern on surface and manufacturing method of the same - Google Patents

Abstract

The present invention discloses a conductive pattern, which may reduce the visual recognition of conductive traces, lower the resistance, improve the adhesion of substrate with conductive pattern, inhibit the variation of resistance even though the substrate is bent, and further achieve the durability of thermal resistance and moisture resistance, for which properties may be achieved by the following composition: a pattern composed of conductive traces with trace width less than 10 um, wherein at least a part of the traces is formed as a multi-layer structure. The multi-layer structure is mainly composed of a first layer (21) and a second layer (22). The first layer (21) comprises one or more than two types of conductive material selected from conductive particles, conductive fillers and conductive metal wire, and its film thickness is less than 500 nm. The second layer (22) has its film thickness thicker than the first layer (21) and uses metal as the main ingredient.

Description

導電性圖案、附導電性圖案基材、附導電性圖案基材之製造方法、於表面具有導電性圖案之構造體、及該構造體之製造方法 Conductive pattern, conductive pattern substrate, method for producing conductive pattern substrate, structure having conductive pattern on surface, and method for producing the same

本發明，係有關於導電性圖案、附導電性圖案基材、附導電性圖案基材之製造方法、於表面具有導電性圖案之構造體、及該構造體之製造方法，更詳細而言，係有關於導電性圖案為由線寬幅未滿10μm之導電性細線所成的導電性圖案、附導電性圖案基材、附導電性圖案基材之製造方法、於表面具有導電性圖案之構造體、及該構造體之製造方法。 The present invention relates to a conductive pattern, a conductive pattern substrate, a method of producing a conductive pattern substrate, a structure having a conductive pattern on a surface, and a method of manufacturing the structure. More specifically, A conductive pattern formed of a conductive thin line having a line width of less than 10 μm, a conductive pattern substrate, a method for producing a conductive pattern substrate, and a structure having a conductive pattern on the surface The body and the method of manufacturing the structure.

印刷法，係對於大面積化、連續生產(例如卷至卷(Roll to Roll))而言為合適，並有著能夠大幅度降低生產成本的優點，近年來，係進行有將此利用在電子零件等之製造中的嘗試。 The printing method is suitable for large-area, continuous production (for example, Roll to Roll), and has the advantage of being able to greatly reduce the production cost. In recent years, the system has utilized this in electronic parts. Wait for the attempt in manufacturing.

在專利文獻1中，係揭示有下述之技術：亦 即是，使用噴墨裝置來藉由金屬微粒子墨水而描繪電路圖案，並接著藉由熱或光線來對於該基板進行處理，而使在前述電路圖案中所包含之聚合物或界面活性劑分解、揮發，而作成所期望之膜厚的導體圖案，再進而對於此進行電鍍處理。 In Patent Document 1, the following techniques are disclosed: That is, an inkjet device is used to draw a circuit pattern by metal fine particle ink, and then the substrate is processed by heat or light to decompose the polymer or surfactant contained in the circuit pattern. The conductor pattern is volatilized to form a desired film thickness, and then electroplating is performed thereon.

又，在專利文獻2中，係記載有下述之技術：亦即是，係形成配線7μm之Pd電路，並對此進行加壓處理，之後，施加銅電鍍。 Further, Patent Document 2 describes a technique in which a Pd circuit having a wiring of 7 μm is formed and subjected to a pressure treatment, and then copper plating is applied.

[先行技術文獻] [Advanced technical literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2002-134878號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-134878

[專利文獻2]日本特開2003-306792號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2003-306792

但是，在專利文獻1、2之技術中，係並無法充分地滿足前述(1)~(5)之要求。 However, in the techniques of Patent Documents 1 and 2, the requirements of the above (1) to (5) cannot be sufficiently satisfied.

(1)使構成導電性圖案之導電性細線的視覺辨認性降低。 (1) The visibility of the conductive thin wires constituting the conductive pattern is lowered.

例如，在將被設置有導電性圖案之基材作為顯示器用透明電極等來使用時，係對於使導電性細線的視覺辨認性降低一事有所要求。 For example, when a substrate provided with a conductive pattern is used as a transparent electrode for a display or the like, it is required to lower the visibility of the conductive thin wires.

(2)使導電性細線之電阻值降低以使導電性圖案之電阻值降低。 (2) The resistance value of the conductive thin wire is lowered to lower the resistance value of the conductive pattern.

在為了使視覺辨認性降低等的目的而將線寬幅設為未滿10μm之導電性細線的情況時，為了使其發揮充分的導電性，係對於使電阻值降低一事有所要求。 In the case where the line width is set to a conductive thin wire of less than 10 μm for the purpose of reducing the visibility, etc., in order to exhibit sufficient conductivity, it is required to lower the resistance value.

(3)使基材和導電性圖案之接著性提升。 (3) The adhesion between the substrate and the conductive pattern is improved.

例如在實現可撓性之顯示器時，為了將導電性圖案安定地作保持，係對於使基材和導電性圖案之接著性提升一事有所要求。 For example, when a flexible display is realized, in order to stably hold the conductive pattern, it is required to improve the adhesion between the substrate and the conductive pattern.

(4)對於當將附有導電性圖案之基材作了彎折的情況時之電阻值的變動作抑制而進行可撓化。 (4) It is possible to suppress the change in the resistance value when the substrate having the conductive pattern is bent.

(5)賦予耐熱耐濕性等之耐久性。 (5) Durability imparted to heat resistance, moisture resistance, and the like.

因此，本發明之課題，係在於提供一種能夠使導電性細線之視覺辨認性降低、並能夠使電阻值降低、且能夠使基材和導電性圖案之接著性提升、並且就算是在基材之彎折時也能夠抑制電阻值之變動、且更進而能更賦予耐熱耐濕性等之耐久性的導電性圖案、附導電性圖案基材、附導電性圖案基材之製造方法、於表面具有導電性圖案之構造體、及該構造體之製造方法。 Therefore, an object of the present invention is to provide a structure capable of reducing the visibility of a conductive thin wire and reducing the resistance value, and improving the adhesion between the substrate and the conductive pattern, and even in the substrate. In the case of bending, it is also possible to suppress the fluctuation of the resistance value, and further to impart a durability to the heat-resistant and moisture-resistant conductive pattern, the conductive pattern substrate, the method for producing the conductive pattern substrate, and the surface. A structure of a conductive pattern and a method of manufacturing the structure.

又，本發明之其他課題，係可依據以下之記載而成為更加明瞭。 Further, other problems of the present invention will become more apparent from the following description.

上述課題，係藉由以下之各發明而作了解 決。 The above issues are understood by the following inventions. Determined.

1.一種導電性圖案，係為由線寬幅未滿10μm之導電性細線所成的圖案，其特徵為：前述細線之至少一部分係成為多層構造，該多層構造，係以第1層和第2層作為構成要素，該第1層，係包含有從導電性粒子、導電性填充物、導電性金屬線所選擇的1種或2種以上之導電材料，且膜厚未滿500nm，該第2層，其膜厚係為較前述第1層更厚，並以金屬作為主成分。 1. A conductive pattern formed by a conductive thin line having a line width of less than 10 μm, characterized in that at least a part of the thin line is a multilayer structure, and the multilayer structure is a first layer and a first layer The first layer includes one or two or more kinds of conductive materials selected from the conductive particles, the conductive filler, and the conductive metal wires, and the film thickness is less than 500 nm. The second layer has a film thickness thicker than the first layer and has a metal as a main component.

2.如前述1所記載之導電性圖案，其中，前述第1層和前述第2層之膜密度係為相異。 2. The conductive pattern according to the above 1, wherein the film density of the first layer and the second layer are different.

3.如前述1或2所記載之導電性圖案，其中，前述導電性細線之表面，其算數平均粗度Ra係為200nm以上未滿2000nm。 3. The conductive pattern according to the above 1 or 2, wherein the surface of the conductive thin wire has an arithmetic mean roughness Ra of 200 nm or more and less than 2000 nm.

4.如前述1~3中之任一者所記載之導電性圖案，其中，前述第1層，係以銀或銅作為主成分，前述第2層，係以銅作為主成分。 4. The conductive pattern according to any one of the above 1 to 3, wherein the first layer is made of silver or copper as a main component, and the second layer is made of copper as a main component.

5.如前述1~4中之任一者所記載之導電性圖案，其中，在前述第2層之與前述第1層相反側處，係更進而具備有第3層。 5. The conductive pattern according to any one of the above 1 to 4, wherein the second layer is further provided with a third layer on a side opposite to the first layer.

6.如前述5所記載之導電性圖案，其中，前述第3層，係由從金屬、金屬氧化物以及有機物中所選擇的至少1者所成。 6. The conductive pattern according to the above 5, wherein the third layer is made of at least one selected from the group consisting of metals, metal oxides, and organic materials.

7.一種導電性圖案，其特徵為：係由如前述1~6中之任一者所記載之導電性圖案、和以與前述導電 性圖案之端部之至少一部分相重疊的方式所形成的包含有導電材料之平塗圖案，而形成之。 A conductive pattern characterized by comprising the conductive pattern according to any one of the above 1 to 6, and the conductive layer The flat pattern of the conductive material is formed by overlapping at least a portion of the ends of the pattern to form a flat coating pattern of the conductive material.

8.一種附導電性圖案基材，其特徵為：係在進行了表面處理的基材上，設置有由線寬幅未滿10μm之導電性細線所成的圖案，前述細線之至少一部分係成為多層構造，該多層構造，係以第1層和第2層作為構成要素，該第1層，係包含有從導電性粒子、導電性填充物、導電性金屬線所選擇的1種或2種以上之導電材料，且膜厚未滿500nm，該第2層，其膜厚係為較前述第1層更厚，並以金屬作為主成分。 A conductive pattern substrate characterized in that a substrate having a surface treatment is provided with a pattern of conductive fine lines having a line width of less than 10 μm, and at least a part of the thin lines are formed. In the multilayer structure, the first layer and the second layer are constituent elements, and the first layer includes one or two selected from the group consisting of conductive particles, conductive fillers, and conductive metal wires. The above conductive material has a film thickness of less than 500 nm, and the second layer has a film thickness thicker than the first layer and has a metal as a main component.

9.如前述8所記載之附導電性圖案基材，其中，前述表面處理，係為將前述基材之表面能提升之處理。 9. The conductive pattern substrate according to the above 8, wherein the surface treatment is a treatment for improving the surface energy of the substrate.

10.如前述8或9所記載之附導電性圖案基材，其中，前述表面處理，係為在前述基材之表面上形成樹脂層之處理。 10. The conductive pattern substrate according to the above 8 or 9, wherein the surface treatment is a treatment of forming a resin layer on the surface of the substrate.

11.如前述8~10中之任一者所記載之附導電性圖案基材，其中，係在對於兩面而進行了表面處理之前述基材的兩面上，設置有前述由線寬幅未滿10μm之導電性細線所成的圖案。 The conductive pattern substrate according to any one of the above items, wherein the surface of the substrate which has been subjected to surface treatment on both surfaces is provided with the line width being less than A pattern of 10 μm conductive thin lines.

12.一種附導電性圖案基材之製造方法，係為製造如前述8~11中之任一者所記載的附導電性圖案基材之方法，其特徵為：係在前述第1層之形成工程中，包含有印刷製程，該印刷製程，係包含有在使用導電材料濃度 為未滿5%之墨水來形成了線段之後，對於墨水之乾燥製程進行控制，而在前述線段之線寬幅方向兩端處選擇性地堆積導電材料之製程。 A method for producing a conductive pattern substrate according to any one of the above items 8 to 11, wherein the method of forming the conductive layer substrate is characterized in that the first layer is formed The engineering process includes a printing process, and the printing process includes the concentration of the conductive material in use. After the line segment is formed with less than 5% of the ink, the drying process of the ink is controlled, and the process of selectively depositing the conductive material at both ends of the line width direction of the aforementioned line segment.

13.如前述12所記載之附導電性圖案基材之製造方法，其中，前述墨水之表面張力，係為未滿50mN/m，並且，該墨水之相對於前述基材之接觸角，係為10°~50°之範圍內。 The method for producing a conductive pattern substrate according to the above 12, wherein the surface tension of the ink is less than 50 mN/m, and the contact angle of the ink with respect to the substrate is Within the range of 10°~50°.

14.如前述12或13所記載之附導電性圖案基材之製造方法，其中，在前述印刷製程處的前述線段之形成中，係使用噴墨法。 The method for producing a conductive pattern substrate according to the above 12 or 13, wherein an inkjet method is used for forming the line segment at the printing process.

15.如前述14所記載之附導電性圖案基材之製造方法，其中，係使用噴墨法來對於前述基材而從複數之方向進行複數次的印刷，以形成前述線段。 15. The method for producing a conductive pattern substrate according to the above-described item 14, wherein the line segment is formed in a plurality of times from the plurality of directions by the inkjet method to form the line segment.

16.如前述12~15中之任一者所記載之附導電性圖案基材之製造方法，其中，作為前述墨水之乾燥製程，係使用從使印刷中之前述基材乾燥之製程、在印刷後進行加熱之製程、在印刷後進行送風之製程、以及在印刷後進行光照射之製程，此些之製程中所選擇的1或複數之組合。 The method for producing a conductive pattern substrate according to any one of the above-mentioned items, wherein the ink drying process is performed by a process of drying the substrate during printing. A process of heating, a process of supplying air after printing, and a process of performing light irradiation after printing, and a combination of one or more selected in the processes.

17.如前述12~16中之任一者所記載之附導電性圖案基材之製造方法，其中，作為在使前述導電材料選擇性地作了堆積之製程後的後續工程，係藉由從加熱處理、化學處理、光(照射)處理中所選擇的處理，來進行低電阻化。 The method for producing a conductive pattern substrate according to any one of the above items 12 to 16, wherein the subsequent process after the process of selectively stacking the conductive material is performed by The treatment selected in the heat treatment, the chemical treatment, and the light (irradiation) treatment is performed to reduce the resistance.

18.如前述12~17中之任一者所記載之附導電性圖案基材之製造方法，其中，作為前述第2層之形成工程，係包含有電化學性之製程。 The method for producing a conductive pattern substrate according to any one of the items 12 to 17, wherein the second layer is formed by an electrochemical process.

19.如前述18所記載之附導電性圖案基材之製造方法，其中，前述電化學性之製程，係為無電解電鍍以及電解電鍍之其中一者或者是兩者之組合。 The method for producing a conductive pattern substrate according to the above 18, wherein the electrochemical process is one of electroless plating and electrolytic plating or a combination of the two.

20.如前述12~19中之任一者所記載之附導電性圖案基材之製造方法，其中，係在前述第2層之上形成第3層。 The method for producing a conductive pattern substrate according to any one of the above items 12 to 19, wherein the third layer is formed on the second layer.

21.如前述12~20中之任一者所記載之附導電性圖案基材之製造方法，其中，前述第1層之形成工程，係在前述基材上賦予第1之前述線狀液體，並在使該第1線狀液體乾燥的過程中使該導電材料選擇性地堆積於緣部，而形成藉由包含有該導電材料之2根的線段所構成之第1平行線圖案，接著，在前述基材上，以與前述第1平行線圖案之形成區域相交叉的方式而賦予第2之前述線狀液體，並在使該第2線狀液體乾燥的過程中使該導電材料選擇性地堆積於緣部，而形成藉由包含有該導電材料之2根的線段所構成之第2平行線圖案，藉由此，來形成由使前述第1平行線圖案與前述第2平行線圖案在至少1個的交點處而相交之圖案所成的前述第1層。 The method for producing a conductive pattern substrate according to any one of the above items, wherein the first layer is formed by applying the first linear liquid to the substrate. And in the process of drying the first linear liquid, the conductive material is selectively deposited on the edge portion to form a first parallel line pattern composed of two line segments including the conductive material, and then, The second linear liquid is applied to the substrate so as to intersect the formation region of the first parallel line pattern, and the conductive material is selectively made to dry the second linear liquid. Deposited on the edge portion to form a second parallel line pattern including two line segments of the conductive material, thereby forming the first parallel line pattern and the second parallel line pattern The first layer formed by the pattern intersecting at at least one intersection.

22.如前述21所記載之附導電性圖案基材之製造方法，其中，針對構成前述第2平行線圖案之前述2根的線段間之間隔，係以使在前述第1平行線圖案之形成 區域內的平均間隔A和在前述第1平行線圖案之形成區域外的平均間隔B會滿足下述式(1)的方式，來進行調整：0.9≦B/A≦1.1‧‧‧式(1)。 [Claim 22] The method for producing a conductive pattern substrate according to the above aspect, wherein the interval between the two line segments constituting the second parallel line pattern is such that the first parallel line pattern is formed The average interval A in the region and the average interval B outside the formation region of the first parallel line pattern satisfy the following formula (1) to be adjusted: 0.9≦B/A≦1.1‧‧‧(1) ).

23.如前述22所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係將前述第1平行線圖案之形成區域內的表面能和前述第1平行線圖案之形成區域外的表面能之間之差，設為5mN/m以下。 The method for producing a conductive pattern substrate according to the above aspect, wherein the surface energy in the formation region of the first parallel line pattern and the first portion are adjusted to satisfy the adjustment of the above formula (1) The difference between the surface energies outside the formation region of the parallel line pattern is set to 5 mN/m or less.

24.如前述22所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係將塗布前述第1線狀液體中所包含的導電材料並使其乾燥之平塗面的表面能和前述第1平行線圖案之形成區域外的表面能之間之差，設為5mN/m以下。 The method of producing a conductive pattern substrate according to the above-mentioned item 22, wherein the conductive material contained in the first linear liquid is applied and adjusted so as to satisfy the adjustment of the above formula (1). The difference between the surface energy of the dried flat coating surface and the surface energy outside the formation region of the first parallel line pattern is 5 mN/m or less.

25.如前述22所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係將在前述第1平行線圖案之形成區域內的前述第2線狀液體之接觸角和在前述第1平行線圖案之形成區域外的前述第2線狀液體之接觸角之間之差，設為10°以下。 [Claim 25] The method for producing a conductive pattern substrate according to the above aspect, wherein the second line in the formation region of the first parallel line pattern is adjusted to satisfy the adjustment of the above formula (1) The difference between the contact angle of the liquid and the contact angle of the second linear liquid outside the formation region of the first parallel line pattern is 10 or less.

26.如前述22所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係將在塗布前述第1線狀液體中所包含的導電材料並使其乾燥之平塗面處的前述第2線狀液體之接觸角和在前述第1平行線圖案之形成區域外的前述第2線狀液體之接觸角之 間之差，設為10°以下。 The method for producing a conductive pattern substrate according to the above-mentioned item 22, wherein the conductive material contained in the first linear liquid is applied and adjusted to satisfy the adjustment of the above formula (1). a contact angle of the second linear liquid at the dried flat coating surface and a contact angle of the second linear liquid outside the formation region of the first parallel line pattern The difference between the two is set to 10 or less.

27.如前述22所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係將在前述第1平行線圖案之形成區域外的前述第2線狀液體中之溶劑中的沸點為最高之溶劑的接觸角，設為6°以下。 [Claim 27] The method for producing a conductive pattern substrate according to the above aspect, wherein the adjustment to satisfy the expression (1) is performed by the second line outside the formation region of the first parallel line pattern. The contact angle of the solvent having the highest boiling point among the solvents in the liquid is set to be 6 or less.

28.如前述22所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係使在前述第1平行線圖案之形成區域內的前述第2線狀液體之每單位長度之液體賦予量、和在前述第1平行線圖案之形成區域外的前述第2線狀液體之每單位長度之液體賦予量，此兩者互為相異。 The method for producing a conductive pattern substrate according to the above aspect, wherein the second line in the formation region of the first parallel line pattern is adjusted to satisfy the adjustment of the above formula (1) The liquid application amount per unit length of the liquid and the liquid application amount per unit length of the second linear liquid outside the formation region of the first parallel line pattern are different from each other.

29.如前述22所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係在形成了前述第1平行線圖案之後，於賦予前述第2線狀液體之前，將包含前述第1平行線圖案之形成區域內的區域作洗淨。 29. The method of producing a conductive pattern substrate according to the above-mentioned item 22, wherein the adjustment to satisfy the expression (1) is performed after the first parallel line pattern is formed, and the second line is provided. Before the liquid is formed, the region in the formation region including the first parallel line pattern is washed.

30.如前述29所記載之附導電性圖案基材之製造方法，其中，作為前述洗淨，係進行從由加熱所致之洗淨、由電磁波所致之洗淨、由溶劑所致之洗淨、由氣體所致之洗淨以及由電漿所致之洗淨中所選擇的1種或2種以上之組合的洗淨。 The method for producing a conductive pattern substrate according to the above-mentioned item 29, wherein the cleaning is performed by washing by heating, washing by electromagnetic waves, and washing by a solvent. Washing of one or a combination of two or more selected from the group consisting of cleaning by a gas, washing by a plasma, and washing by a plasma.

31.如前述12~30中之任一者所記載之附導電性圖案基材之製造方法，其中，係以與前述導電性圖案 之至少一部分相接觸的方式，而形成包含有集電線或導電材料之平塗圖案。 The method for producing a conductive pattern substrate according to any one of the above items 12 to 30, wherein the conductive pattern is A pattern of at least a portion of which is in contact with each other to form a flat coating pattern comprising a collecting wire or a conductive material.

32.一種構造體，係為於表面上具備有導電性圖案之構造體，其特徵為：前述導電性圖案，係為由線寬幅未滿10μm之導電性細線所成的圖案，前述細線之至少一部分係成為多層構造，該多層構造，係以第1層和第2層作為構成要素，該第1層，係包含有從導電性粒子、導電性填充物、導電性金屬線所選擇的1種或2種以上之導電材料，且膜厚未滿500nm，該第2層，其膜厚係為較前述第1層更厚，並以金屬作為主成分。 32. A structure comprising a structure having a conductive pattern on a surface thereof, wherein the conductive pattern is a pattern formed of a conductive thin wire having a line width of less than 10 μm, wherein the thin line is At least a part of the multilayer structure has a first layer and a second layer as constituent elements, and the first layer includes one selected from conductive particles, conductive fillers, and conductive metal wires. Or two or more kinds of conductive materials, and the film thickness is less than 500 nm, and the second layer has a film thickness thicker than the first layer and has a metal as a main component.

33.一種構造體之製造方法，係為製造如前述32所記載之構造體之製造方法，其特徵為：係使用有在被作了表面處理之表面上而設置有導電性圖案之附導電性圖案基材，前述導電性圖案，係為由線寬幅未滿10μm之導電性細線所成的圖案，前述細線之至少一部分係成為多層構造，該多層構造，係以第1層和第2層作為構成要素，該第1層，係包含有從導電性粒子、導電性填充物、導電性金屬線所選擇的1種或2種以上之導電材料，且膜厚未滿500nm，該第2層，其膜厚係為較前述第1層更厚，並以金屬作為主成分，該構造體之製造方法，係在構造體表面上，貼合前述附導電性圖案基材，或者是從前述附導電性圖案基材而將導電性圖案部作轉印，來製造出於表面上具有導電性圖案之構造體。 A method for producing a structure according to the above-mentioned item 32, which is characterized in that a conductive property provided with a conductive pattern on a surface to be surface-treated is used. In the pattern substrate, the conductive pattern is a pattern formed of conductive thin wires having a line width of less than 10 μm, and at least a part of the thin lines has a multilayer structure, and the multilayer structure is a first layer and a second layer. The first layer includes one or two or more kinds of conductive materials selected from the conductive particles, the conductive filler, and the conductive metal wires, and the film thickness is less than 500 nm, and the second layer The film thickness is thicker than the first layer, and a metal is used as a main component. The method for producing the structure is to adhere the conductive pattern substrate to the surface of the structure, or to attach the above-mentioned The conductive pattern portion is transferred to the conductive pattern substrate to produce a structure having a conductive pattern on the surface.

若依據本發明，則係可提供一種能夠使導電性細線之視覺辨認性降低、並能夠使電阻值降低、且能夠使基材和導電性圖案之接著性提升、並且就算是在基材之彎折時也能夠抑制電阻值之變動、且更進而能更賦予耐熱耐濕性等之耐久性的導電性圖案、附導電性圖案基材、附導電性圖案基材之製造方法、於表面具有導電性圖案之構造體、及該構造體之製造方法。 According to the present invention, it is possible to provide a structure capable of reducing the visibility of the conductive thin wires and lowering the resistance value, and improving the adhesion between the substrate and the conductive pattern, and even at the bending of the substrate. In the case of folding, it is also possible to suppress the fluctuation of the resistance value, and further to impart a durability to the heat-resistant and moisture-resistant conductive pattern, the conductive pattern substrate, the method for producing the conductive pattern substrate, and the conductive film on the surface. A structure of a pattern and a method of manufacturing the structure.

1‧‧‧基材 1‧‧‧Substrate

2‧‧‧導電性細線 2‧‧‧Electrical thin wires

21‧‧‧第1層 21‧‧‧1st floor

22‧‧‧第2層 22‧‧‧2nd floor

23‧‧‧第3層 23‧‧‧3rd floor

3‧‧‧集電線 3‧‧‧Set wire

4‧‧‧配線 4‧‧‧Wiring

102‧‧‧第1線狀液體 102‧‧‧1st linear liquid

103‧‧‧第1平行線圖案 103‧‧‧1st parallel line pattern

131、132‧‧‧線段(細線) 131, 132‧‧" line (thin line)

104‧‧‧第2線狀液體 104‧‧‧2nd linear liquid

105‧‧‧第2平行線圖案 105‧‧‧2nd parallel line pattern

151、152‧‧‧線段(細線) 151, 152‧‧ ‧ line segment (thin line)

106‧‧‧圖案 106‧‧‧ patterns

207‧‧‧平塗圖案 207‧‧‧ flat pattern

208‧‧‧細線(導出電極) 208‧‧‧ Thin wire (derived electrode)

[圖1]係為對於構成第1形態之導電性圖案的導電性細線之其中一例作展示之剖面圖。 Fig. 1 is a cross-sectional view showing an example of a conductive thin wire constituting the conductive pattern of the first embodiment.

[圖2]係為針對起因於對於第1層而設置第2層一事所導致的表面粗度之變化的其中一例作展示之圖。 FIG. 2 is a view showing an example of a change in surface roughness caused by the provision of the second layer for the first layer.

[圖3]係為對於在由包含有導電材料之墨水所成的線段之線寬幅方向兩端處選擇性地堆積導電材料的原理作說明之圖。 [Fig. 3] is a diagram for explaining the principle of selectively depositing a conductive material at both ends of a line width direction of a line segment formed by an ink containing a conductive material.

[圖4]對於第1層之形成過程的其中一例作說明之說明圖。 Fig. 4 is an explanatory diagram for explaining an example of a process of forming the first layer.

[圖5]對於第1層之形成過程的其他例作說明之說明圖。 Fig. 5 is an explanatory view for explaining another example of the formation process of the first layer.

[圖6]對於第1層之形成過程的又一其他例作說明之說明圖。 Fig. 6 is an explanatory view for explaining still another example of the formation process of the first layer.

[圖7]對於集電線之形成例作展示之圖。 Fig. 7 is a view showing a formation example of a collecting wire.

[圖8]係為對於構成第2形態之導電性圖案的導電性細線之其他例作展示之剖面圖。 Fig. 8 is a cross-sectional view showing another example of the conductive thin wires constituting the conductive pattern of the second embodiment.

[圖9]係為對於在兩面上形成有導電性圖案的基材之其中一例作展示之圖。 Fig. 9 is a view showing an example of a substrate on which conductive patterns are formed on both surfaces.

[圖10]係為對於用以製造附導電性圖案基材之製造裝置的其中一例作展示之說明圖。 FIG. 10 is an explanatory view showing an example of a manufacturing apparatus for manufacturing a conductive pattern substrate.

[圖11]係為對於第1層形成區域的基本構成作說明之概略平面圖。 FIG. 11 is a schematic plan view illustrating a basic configuration of a first layer formation region.

[圖12]係為對於在第1層形成區域處之第1層之形成過程的其中一例作說明之圖。 FIG. 12 is a view for explaining an example of a process of forming the first layer at the region where the first layer is formed.

[圖13]係為對於用以製造附導電性圖案基材之製造裝置的其他例作展示之說明圖。 FIG. 13 is an explanatory view showing another example of a manufacturing apparatus for manufacturing a conductive pattern substrate.

[圖14]對於網格狀之功能性圖案的形成方法之其中一例作說明之說明圖。 Fig. 14 is an explanatory diagram for explaining an example of a method of forming a grid-like functional pattern.

[圖15]對於網格狀之功能性圖案的形成方法之其他例作說明之說明圖。 Fig. 15 is an explanatory diagram for explaining another example of a method of forming a grid-like functional pattern.

[圖16]對於網格狀之功能性圖案的形成方法之又一其他例作說明之說明圖。 Fig. 16 is an explanatory diagram for explaining still another example of a method of forming a grid-like functional pattern.

[圖17]對於交叉部X之形成例作展示之重要部分擴大圖。 Fig. 17 is an enlarged view showing an important part of the formation of the intersection portion X.

[圖18]係為網格狀之功能性圖案的光學顯微鏡照片。 Fig. 18 is an optical micrograph of a functional pattern in a grid shape.

[圖19]係為對於平均間隔A以及平均間隔B之測定 方法的其中一例作說明之圖。 [Fig. 19] is a measurement for the average interval A and the average interval B. An example of the method is illustrated.

[圖20]係為對於被形成在基材上之平行線圖案的其中一例作展示之部分擴大平面圖。 Fig. 20 is a partially enlarged plan view showing an example of a parallel line pattern formed on a substrate.

[圖21]係為對於在圖20中之(a)-(a)線剖面作說明的說明圖。 FIG. 21 is an explanatory view for explaining a cross section taken along line (a)-(a) of FIG. 20.

[圖22]係為對於從線狀液體而形成平行線圖案的模樣作概念性說明之立體剖面圖。 FIG. 22 is a perspective cross-sectional view conceptually illustrating a pattern in which a parallel line pattern is formed from a linear liquid.

[圖23]對於形成導電性圖案之方法的其中一例作概念性說明之平面圖。 Fig. 23 is a plan view conceptually illustrating one example of a method of forming a conductive pattern.

[圖24]對於導電性圖案之構成例作概念性說明之平面圖。 Fig. 24 is a plan view conceptually illustrating a configuration example of a conductive pattern.

[圖25]對於導電性圖案之其他構成例作概念性說明之平面圖。 Fig. 25 is a plan view conceptually illustrating another configuration example of the conductive pattern.

[圖26]對於將導電性圖案作分割的其中一例作概念性說明之平面圖。 Fig. 26 is a plan view conceptually illustrating an example in which a conductive pattern is divided.

[圖27]對於將導電性圖案作分割的其他例作概念性說明之平面圖。 Fig. 27 is a plan view conceptually illustrating another example in which a conductive pattern is divided.

[圖28]對於網格狀圖案與細線的連接形態之例作概念性說明之平面圖。 Fig. 28 is a plan view conceptually illustrating an example of a connection pattern of a grid pattern and a thin line.

[圖29]係為對於被形成有導電性圖案的構造體之其中一例作展示之說明圖。 FIG. 29 is an explanatory view showing an example of a structure in which a conductive pattern is formed.

[圖30]係為對於使用附導電性圖案基材來在構造體表面上形成導電性圖案的方法之例作展示之說明圖。 FIG. 30 is an explanatory view showing an example of a method of forming a conductive pattern on the surface of a structure using a conductive pattern substrate.

[圖31]係為針對實施例作說明之圖。 FIG. 31 is a diagram for explaining an embodiment.

[圖32]係為針對實施例作說明之圖。 FIG. 32 is a diagram for explaining an embodiment.

[圖33]係為針對實施例之試驗裝置作說明之圖。 Fig. 33 is a view for explaining a test apparatus of the embodiment.

以下，參考圖面來針對用以實施本發明之形態作說明。 Hereinafter, the form for carrying out the invention will be described with reference to the drawings.

圖1，係為對於構成第1形態之導電性圖案的導電性細線之其中一例作展示之剖面圖。 Fig. 1 is a cross-sectional view showing an example of a conductive thin wire constituting the conductive pattern of the first embodiment.

在圖1中，1係為基材，2係為構成導電性圖案的導電性細線。 In Fig. 1, 1 is a base material, and 2 is a conductive thin wire constituting a conductive pattern.

導電性細線2之線寬幅，係被設為未滿10μm。 The line width of the conductive thin wires 2 is set to be less than 10 μm.

導電性細線2，係具有多層構造，在圖示之例中，作為該多層構造之構成要素，係具備有第1層21和第2層22。 The conductive thin wire 2 has a multilayer structure, and in the illustrated example, the first layer 21 and the second layer 22 are provided as constituent elements of the multilayer structure.

第1層21，係包含有由導電性粒子、導電性填充物、導電性金屬線所選擇之導電材料，膜厚係被設為未滿500nm。 The first layer 21 includes a conductive material selected from conductive particles, a conductive filler, and a conductive metal wire, and has a film thickness of less than 500 nm.

第2層22，其膜厚係較第1層21更厚，並以金屬作為主成分。 The second layer 22 has a film thickness thicker than that of the first layer 21 and has a metal as a main component.

由具備有上述特定之多層構造之導電性細線所成的導電性圖案，係能夠得到下述之效果：亦即是，係能夠使導電性細線之視覺辨認性降低、並能夠使電阻值降低、且能夠使基材和導電性圖案之接著性提升、並且就算 是在基材之彎折時也能夠抑制電阻值之變動、且更進而能更賦予耐熱耐濕性等之耐久性。因此，例如，係具備有對於作為被設置在可撓性之基材上的透明電極膜等之用途而言為合適的優良特性。 The conductive pattern formed of the conductive thin wires having the above-described specific multilayer structure can provide an effect that the visibility of the conductive thin wires can be lowered and the resistance value can be lowered. And can improve the adhesion between the substrate and the conductive pattern, and even When the base material is bent, it is possible to suppress the fluctuation of the electric resistance value and further impart durability such as heat resistance and moisture resistance. Therefore, for example, it is preferable to have excellent characteristics for use as a transparent electrode film or the like which is provided on a flexible substrate.

導電性細線2之線寬幅，係被設為線寬幅未滿10μm，較理想係被設為3~8μm之範圍。若是線寬幅為3~8μm之範圍，則係能夠更適當地防止導電性細線2之斷線，且亦能夠適當地使視覺辨認性降低。若是將線寬幅設為3μm以上之範圍並且為未滿7μm乃至於未滿5μm，則亦為理想。針對用以賦予此種細的線寬幅之理想方法，係於後作詳細敘述。 The width of the conductive thin wires 2 is set to be less than 10 μm in line width, and is preferably in the range of 3 to 8 μm. When the line width is in the range of 3 to 8 μm, the disconnection of the conductive thin wires 2 can be more appropriately prevented, and the visibility can be appropriately lowered. It is also preferable if the line width is set to a range of 3 μm or more and is less than 7 μm or even less than 5 μm. An ideal method for imparting such a thin line width will be described in detail later.

在導電性細線2之第1層21中所含有的導電性材料，係只要身為從導電性粒子、導電性填充物、導電性金屬線中所選擇的1種或者是2種以上之組合即可，而並未特別作限定，但是，例如，係可適當例示有例如粒子直徑為未滿100nm之金屬奈米粒子(例如，銀奈米粒子、銅奈米粒子等)或銀粉、銅粉等之導電性填充物或者是銀奈米金屬線、銅奈米金屬線等之導電性奈米金屬線等。又，亦可使用導電性碳材料(例如，石墨、碳奈米管、石墨烯等)。 The conductive material contained in the first layer 21 of the conductive thin wires 2 is one selected from the group consisting of conductive particles, conductive fillers, and conductive metal wires, or a combination of two or more types. However, it is not particularly limited, and, for example, metal nanoparticles having a particle diameter of less than 100 nm (for example, silver nanoparticles, copper nanoparticles, etc.) or silver powder, copper powder, or the like can be suitably exemplified. The conductive filler is a conductive nanowire such as a silver nanowire or a copper nanowire. Further, a conductive carbon material (for example, graphite, carbon nanotubes, graphene, or the like) may be used.

第1層21，特別理想為以銀、銅作為主成分，相反的，若是採用鈀或鉑，則由於係會另外需要進行還原工程等而導致工程數量增加，因此並不理想。 In the first layer 21, it is particularly preferable to use silver or copper as a main component. Conversely, if palladium or platinum is used, it is not preferable because the number of processes is increased due to the need for reduction engineering or the like.

第1層21之膜厚，只要是未滿500nm，則係 並未特別作限定，但是，係以身為30nm~300nm之範圍為更理想。 The film thickness of the first layer 21 is as long as it is less than 500 nm. It is not particularly limited, but it is more preferably in the range of 30 nm to 300 nm.

在導電性細線2之第2層22中作為主成分所含有的金屬，雖並未特別作限定，但是，係可合適例示有從銀、銅、鎳等所選擇的1種或2種以上之組合。特別是，較理想，第2層係以銅作為主成分。 Though the metal contained in the second layer 22 of the conductive thin wires 2 as the main component is not particularly limited, one or two or more selected from the group consisting of silver, copper, and nickel may be suitably exemplified. combination. In particular, it is preferable that the second layer has copper as a main component.

第2層22之膜厚，只要是較第1層之膜厚更厚，則係並未特別作限定，但是，係以身為600nm~5μm之範圍為理想。另外，第2層22之膜厚，係為從第1層之表面起所測定的厚度。 The film thickness of the second layer 22 is not particularly limited as long as it is thicker than the thickness of the first layer, but it is preferably in the range of 600 nm to 5 μm. Further, the film thickness of the second layer 22 is a thickness measured from the surface of the first layer.

第1層21和第2層22之膜厚比例，係以第2層22之膜厚會成為第1層21之膜厚的5倍以上為理想，又以會成為10倍以上為更理想。 The film thickness ratio of the first layer 21 and the second layer 22 is preferably five times or more the film thickness of the first layer 22, and more preferably 10 times or more.

第1層21之膜密度和第2層22之膜密度，係以互為相異為理想。 The film density of the first layer 21 and the film density of the second layer 22 are preferably different from each other.

特別是，較理想，相較於第1層21之膜密度，第2層22之膜密度係為更高，此時，特別理想，膜密度差係為1g/cm³以上。 In particular, it is preferable that the film density of the second layer 22 is higher than the film density of the first layer 21, and in this case, it is particularly preferable that the film density difference is 1 g/cm ³ or more.

例如，較理想，係將第1層21之膜密度設為5g/cm³~8g/cm³之範圍，並將第2層22之膜密度設為6g/cm³~9g/cm³之範圍。最為理想，係在此些之範圍內而形成有上述之膜密度差。 For example, it is preferable that the film density of the first layer 21 is in the range of 5 g/cm ³ to 8 g/cm ³ , and the film density of the second layer 22 is set to be in the range of 6 g/cm ³ to 9 g/cm ³ . . Most preferably, the film density difference described above is formed within such a range.

膜密度，係可使用X線反射率法來作測定。 The film density can be measured by the X-ray reflectance method.

構成導電性圖案之導電性細線2之表面，較 理想，其表面粗度係為大，例如，以算術平均粗度Ra而言，係以身為200nm以上未滿2000nm為理想，又以身為300nm~1200nm之範圍為更理想。算數平均粗度Ra，係可使用高亮度非接觸3維表面形狀粗度計WYKO NT9100來作測定。藉由此，係可得到能夠使導電性細線2之視覺辨認性更加降低的效果。 The surface of the conductive thin wire 2 constituting the conductive pattern is Preferably, the surface roughness is large. For example, in terms of the arithmetic mean roughness Ra, it is preferably 200 nm or more and less than 2000 nm, and more preferably 300 nm to 1200 nm. The arithmetic mean roughness Ra can be measured using a high-brightness non-contact three-dimensional surface shape roughness meter WYKO NT9100. As a result, an effect of further reducing the visibility of the conductive thin wires 2 can be obtained.

例如，從使導電性細線之視覺辨認性更加降低的觀點來看，較理想，相對於第1層21之表面粗度，形成第2層22後的表面粗度係變得更大。 For example, from the viewpoint of further reducing the visibility of the conductive thin wires, it is preferable that the surface roughness after forming the second layer 22 becomes larger with respect to the surface roughness of the first layer 21.

圖2，係為針對起因於對於第1層21而設置第2層22一事所導致的表面粗度之變化的其中一例作展示之圖。圖2(a)，係為尚未被設置有第2層22之第1層21表面的電子顯微鏡照片，圖2(b)，係為對於第1層21而設置了第2層22之後的導電性細線2表面之電子顯微鏡照片。 FIG. 2 is a view showing an example of a change in surface roughness caused by the provision of the second layer 22 for the first layer 21. 2(a) is an electron micrograph of the surface of the first layer 21 on which the second layer 22 is not provided, and FIG. 2(b) is a conductive layer after the second layer 22 is provided for the first layer 21. Electron micrograph of the surface of the thin line 2.

如同圖示一般，藉由對於第1層21而設置第2層22一事，在表面上係被形成有凹凸，而能夠使表面粗度增大。 As shown in the figure, by providing the second layer 22 for the first layer 21, irregularities are formed on the surface, and the surface roughness can be increased.

基材1係並未特別作限定，而可將塑膠、玻璃、金屬(例如，銅、鎳、鋁、鐵等，或者是合金)、陶瓷等作單獨使用或者是作貼合使用。特別是從可撓性化等之觀點來看，係以塑膠為理想，其中，又以聚乙烯、聚丙烯、丙烯酸、聚酯、聚醯胺等為合適。特別是，係以聚對苯二甲酸乙二酯(又稱PET)、聚對苯二甲酸丙二酯(又 稱PBT)等之聚丙烯為合適。 The base material 1 is not particularly limited, and plastic, glass, metal (for example, copper, nickel, aluminum, iron, or the like) or ceramics may be used alone or in combination. In particular, from the viewpoint of flexibility and the like, it is preferable to use plastic, and polyethylene, polypropylene, acrylic, polyester, polyamine or the like is suitable. In particular, polyethylene terephthalate (also known as PET), polytrimethylene terephthalate (again Polypropylene such as PBT) is suitable.

基材1之被形成有導電性細線2的表面，係可為平滑，亦可為粗面。 The surface of the substrate 1 on which the conductive thin wires 2 are formed may be smooth or rough.

當粗面的情況時，最大高度Ry，係以未滿5mm為理想，又以身為0.3mm~2mm之範圍為更理想。最大高度Ry，係可使用高亮度非接觸3維表面形狀粗度計WYKO NT9100來作測定。 In the case of a rough surface, the maximum height Ry is preferably less than 5 mm, and more preferably in the range of 0.3 mm to 2 mm. The maximum height Ry can be measured using a high-brightness non-contact three-dimensional surface shape roughness meter WYKO NT9100.

粗面之具體性的表面狀態，雖並未特別作限定，但是，特別是以使用規則性地具有週期而反覆出現凹凸的形狀、連續出現有圓錐狀柱構造之形狀等的具備光學性地對於特定波長而控制其之反射、吸收的功能性之粗面基材為理想。若是在此種基材上形成本發明之導電性圖案，則係能夠一併具有導電功能和光學功能，而為理想。 The surface state of the specific surface of the rough surface is not particularly limited, but is particularly optically used in a shape in which irregularities are periodically formed by using a regular period, and a shape in which a conical column structure is continuously present. It is desirable to use a rough surface substrate that controls the reflection and absorption of a specific wavelength. If the conductive pattern of the present invention is formed on such a substrate, it is desirable to have both a conductive function and an optical function.

基材1，係以預先被進行有表面處理為理想。作為表面處理，例如，係可理想例示出溶劑洗淨、界面活性劑水溶液洗淨、UV臭氧洗淨、電漿處理、樹脂層形成等。 The substrate 1 is preferably subjected to surface treatment in advance. As the surface treatment, for example, solvent washing, surfactant aqueous solution washing, UV ozone washing, plasma treatment, resin layer formation, and the like can be preferably exemplified.

當作為表面處理而進行樹脂層形成的情況時，係以使用使羥基、羧基或其之鹽、磺酸基或其之鹽、聚氧乙烯基等被作了置換的樹脂為理想，而可合適使用丙烯酸樹脂、聚酯樹脂、聚醯胺樹脂、聚胺基甲酸樹脂等。 When the resin layer is formed as a surface treatment, it is preferable to use a resin obtained by replacing a hydroxyl group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, or a polyoxyethylene group. An acrylic resin, a polyester resin, a polyamide resin, a polyurethane resin, or the like is used.

樹脂之重量平均分子量，係以身為5000以上500000以下為理想。又，樹脂，係亦可具備有交聯構造。 The weight average molecular weight of the resin is preferably 5,000 or more and 500,000 or less. Further, the resin may have a crosslinked structure.

樹脂層之厚度，係以身為50nm~5μm之範圍為理想。 The thickness of the resin layer is preferably in the range of 50 nm to 5 μm.

形成樹脂層之方法，雖並未特別限定，但是，係以藉由印刷法、噴墨法、浸漬法等來形成為理想。 The method of forming the resin layer is not particularly limited, but it is preferably formed by a printing method, an inkjet method, a dipping method, or the like.

前述表面處理，較理想，係為將基材1之表面能提升之處理。較理想，係藉由表面處理，而將基材1之表面能增大至5mN/m以上。 The above surface treatment is preferably a treatment for raising the surface energy of the substrate 1. Preferably, the surface energy of the substrate 1 is increased to 5 mN/m or more by surface treatment.

又，作為表面處理之結果，較理想，係將基材1之表面能增大至50mN/m以上。特別是，係以將基材1之表面能設定為50mN/m以上未滿70mN/m之範圍為理想。 Further, as a result of the surface treatment, it is preferred to increase the surface energy of the substrate 1 to 50 mN/m or more. In particular, it is preferable to set the surface energy of the substrate 1 to a range of 50 mN/m or more and less than 70 mN/m.

表面處理，係可對於基材1全體而進行，亦可針對包含被形成有導電性細線之區域的部分而部分性地進行。 The surface treatment may be performed on the entire substrate 1 or partially on the portion including the region in which the conductive thin wires are formed.

又，例如，當將被形成在基材1上之導電性圖案部如同後述一般地而轉印至構造體等處來使用的情況時，較理想，係對於基材1和導電性圖案部之間賦予適度的剝離性(以下，亦稱作易剝離性)，此時，作為對於基材1賦予易剝離性之處理，較理想，係設置矽酮樹脂層，並在其之上層處作為本發明之表面處理而設置樹脂層等。於此情況之矽酮樹脂層，係以身為膜厚10nm~10μm之範圍為理想，而可使用溶劑型、無溶劑型、乳膠型等之矽酮樹脂。 Further, for example, when the conductive pattern portion formed on the substrate 1 is used for transfer to a structure or the like as described later, it is preferable to use the substrate 1 and the conductive pattern portion. An appropriate peeling property (hereinafter also referred to as easy peeling property) is imparted. In this case, as the treatment for imparting easy peeling property to the substrate 1, it is preferable to provide an oxime resin layer and to use it as an upper layer. A resin layer or the like is provided for the surface treatment of the invention. In this case, the fluorenone resin layer is preferably in the range of 10 nm to 10 μm, and a ketone resin such as a solvent type, a solventless type or a latex type can be used.

接著，針對用以製造在基材1上設置有上述 所說明的導電性圖案之附導電性圖案基材的製造方法作說明。 Next, the above is provided for manufacturing on the substrate 1 A method of producing a conductive pattern substrate to which the conductive pattern is described will be described.

在基材1上，係能夠預先施加上述之表面處理。 On the substrate 1, the above surface treatment can be applied in advance.

當在基材1上形成第1層21時，例如係以使用印刷製程為理想。印刷製程，只要是身為將導電材料作為墨水而賦予至基材1上者，則並未特別作限定。 When the first layer 21 is formed on the substrate 1, it is desirable to use, for example, a printing process. The printing process is not particularly limited as long as it is applied to the substrate 1 as a conductive material.

作為特別理想之形態，印刷製程，較理想，係包含有在使用導電材料濃度為未滿5%之墨水來形成了線段之後，對於墨水之乾燥製程進行控制，而在線段之線寬幅方向兩端處選擇性地堆積導電材料之製程，針對此點，係於以下詳細作說明。 As a particularly desirable form, the printing process is preferably carried out by controlling the drying process of the ink after forming a line segment using ink having a conductive material concentration of less than 5%, and the line width direction of the line segment is two The process of selectively depositing a conductive material at the end is described in detail below.

圖3，係為對於在由包含有導電材料之墨水所成的線段之線寬幅方向兩端處選擇性地堆積導電材料的原理作說明之圖。 Fig. 3 is a view for explaining the principle of selectively depositing a conductive material at both ends in the line width direction of a line segment formed of ink containing a conductive material.

於在基材1上而使由包含導電材料之液體所成之線段(以下，亦有稱作線狀液體的情況)20乾燥之過程中，由於會有相較於線狀液體20之中央部而緣部處之乾燥速度會變得更快的傾向(圖3(a))，因此，在線狀液體20之緣部處，導電材料之局部性的堆積係會被促進(圖3(b))。起因於此，會產生線狀液體20之接觸線(緣部)的固定化，伴隨著後續之乾燥所導致的線狀液體20之基材面方向的收縮係被抑制。藉由此效果，線狀液體20中之液體，係會以對於在緣部處之起因於乾燥 而失去的液體作補充的方式，而形成從中央部起朝向緣部的對流(圖3(c))。藉由此對流，線狀液體20中之導電材料係被運送至線寬幅方向兩端處，而促進更進一步的堆積。藉由如此這般所堆積的導電材料，第1層21係被形成(圖3(d))。 In the process of drying the line segment formed by the liquid containing the conductive material (hereinafter, also referred to as a linear liquid) 20 on the substrate 1, since it is compared with the central portion of the linear liquid 20 The drying speed at the edge tends to be faster (Fig. 3(a)). Therefore, at the edge of the linear liquid 20, the local accumulation of the conductive material is promoted (Fig. 3(b) ). As a result, the contact line (edge portion) of the linear liquid 20 is fixed, and the shrinkage in the direction of the substrate surface of the linear liquid 20 due to the subsequent drying is suppressed. By this effect, the liquid in the linear liquid 20 is caused by drying at the edge. The lost liquid is supplemented to form a convection from the central portion toward the edge (Fig. 3(c)). By this convection, the conductive material in the linear liquid 20 is transported to both ends in the width direction of the line to promote further accumulation. The first layer 21 is formed by the conductive material thus deposited (Fig. 3(d)).

藉由導電材料之選擇性的堆積所產生之第1層21，由於線寬幅係會相較於一開始的線段而大幅度的縮細，因此係能夠更合適地實現導電性圖案之細線化。 Since the first layer 21 produced by the selective deposition of the conductive material is greatly reduced in thickness compared to the first line segment, the thinning of the conductive pattern can be more appropriately achieved. .

在印刷製程中所使用之墨水，其導電材料濃度係為未滿5%，又以未滿1%為理想。 The ink used in the printing process has a conductive material concentration of less than 5% and preferably less than 1%.

墨水，係可作為導電材料之溶媒乃至於分散媒，而使用水和有機溶劑等之1種或2種以上之組合，但是，係以身為含有水之水性墨水為理想。又，在墨水中含有介面活性劑一事，亦為理想。 The ink may be used as a solvent for a conductive material or a dispersion medium, and one or a combination of two or more of water and an organic solvent may be used. However, it is preferred to use an aqueous ink containing water. Further, it is also preferable to contain an interface active agent in the ink.

有機溶劑，雖並未特別限定，但是，例如係可例示有：1,2-己二醇、2-甲基-2,4-戊二醇、1,3-丁二醇、1,4-丁二醇、丙二醇等之醇類；二乙二醇一甲基醚、二乙二醇一乙基醚、二乙二醇一丁基醚、三乙二醇一甲基醚、二丙二醇一甲基醚、二丙二醇一乙基醚等之醚類等。 The organic solvent is not particularly limited, and examples thereof include 1,2-hexanediol, 2-methyl-2,4-pentanediol, 1,3-butanediol, and 1,4-. Alcohols such as butanediol and propylene glycol; diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, dipropylene glycol mono An ether such as a group ether or a dipropylene glycol monoethyl ether or the like.

作為介面活性劑，係並未特別限定，但是，係可使用矽系界面活性劑等。所謂矽系界面活性劑，係為使聚二甲基系氧烷酸之側鍵或末端作了聚醚變性者，例如，在市面上，係販賣有信越化學工業製之KF-351A、KF-642或BYK公司製之BYK347、BYK348等。 The surfactant is not particularly limited, and a lanthanoid surfactant or the like can be used. The lanthanide surfactant is a polyether-denatured one which has a side bond or a terminal of a polydimethyl oxyalkanic acid. For example, on the market, KF-351A and KF-made by Shin-Etsu Chemical Co., Ltd. are sold. 642 or BYK347, BYK348, etc. made by BYK.

墨水之表面張力，係以未滿50mN/m為理想，又以身為未滿40mN/m為更理想。又，墨水之相對於基材1的接觸角，係以身為10°~50°為理想。表面張力，係可藉由溶劑、界面活性劑等來作控制。針對接觸角之調整，亦可進行同樣的控制，但是，係亦可藉由基材1之表面能設定來進行控制。 The surface tension of the ink is ideally less than 50 mN/m, and it is more desirable to be less than 40 mN/m. Further, the contact angle of the ink with respect to the substrate 1 is preferably 10 to 50 degrees. The surface tension can be controlled by a solvent, a surfactant, or the like. The same control can be performed for the adjustment of the contact angle, but it can also be controlled by setting the surface energy of the substrate 1.

當使用墨水而在基材1上形成線段時，例如係特別以使用噴墨法為理想。噴墨頭之墨水液滴吐出機構，係可合適例示有熱方式、壓電方式、連續方式等。藉由噴墨法而從噴墨頭之1個噴嘴來在1次之液滴吐出中所吐出的液滴量，較理想係為1pl~200pl之範圍，更理想係為1pl~100pl之範圍。 When a line segment is formed on the substrate 1 using ink, for example, an inkjet method is particularly preferable. The ink droplet discharge mechanism of the ink jet head may be suitably exemplified by a thermal method, a piezoelectric method, a continuous method, or the like. The amount of liquid droplets discharged from one nozzle of the ink jet head by one ink jet ejection method is preferably in the range of 1 pl to 200 pl, and more preferably in the range of 1 pl to 100 pl.

在使用噴墨法的情況中，若是對於基材而從複數之方向進行複數次的印刷，則亦為理想。針對此形態，參考圖4、圖5以及圖6之各例來作說明。 In the case of using the inkjet method, it is also preferable to perform a plurality of printings from the plural direction on the substrate. This embodiment will be described with reference to the respective examples of FIGS. 4, 5, and 6.

圖4，係為對於第1層21之形成過程的其中一例作說明之說明圖。 FIG. 4 is an explanatory view for explaining an example of the formation process of the first layer 21.

如同圖4(a)中所示一般，首先，沿著基材1之長邊方向而使噴墨頭作複數次之掃描，並沿著該長邊方向而形成條帶狀之第1層，接著，對於此形成區域而更進而如同圖4(b)中所示一般，沿著基材1之短邊方向而使噴墨頭作複數次之掃描，並沿著該短邊方向而形成條帶狀之第1層。如此這般，係能夠形成使長邊方向之條帶和短邊方向之條帶相互作了交叉的格子狀之第1層。 As shown in FIG. 4(a), first, the ink jet head is scanned a plurality of times along the longitudinal direction of the substrate 1, and a strip-shaped first layer is formed along the longitudinal direction. Next, with respect to this formation region, and further as shown in FIG. 4(b), the inkjet head is scanned for a plurality of times along the short side direction of the substrate 1, and strips are formed along the short side direction. The first layer of the band. In this manner, it is possible to form a lattice-shaped first layer in which the strips in the longitudinal direction and the strips in the short-side direction intersect each other.

圖5，係為對於第1層21之形成過程的其他例作說明之說明圖。 FIG. 5 is an explanatory view for explaining another example of the formation process of the first layer 21.

如同圖5(a)中所示一般，首先，沿著從基材1之長邊方向起而以特定之角度(於此係為45°)作了傾斜的方向來使噴墨頭作複數次之掃描，並沿著該方向而形成條帶狀之第1層，接著，對於此形成區域而更進而如同圖5(b)中所示一般，沿著從基材1之長邊方向起而以其他之特定之角度(於此係為-45°)作了傾斜的方向來使噴墨頭作複數次之掃描，並沿著該方向而形成條帶狀之第1層。如此這般，係能夠形成由從基材1之長邊方向而作了傾斜的斜線所致之格子狀之第1層。 As shown in Fig. 5(a), first, the ink jet head is made plural times in a direction inclined from a longitudinal direction of the substrate 1 at a specific angle (here, 45°). Scanning, and forming a strip-shaped first layer along the direction, and then, for this formation region, and further as shown in FIG. 5(b), along the long side direction from the substrate 1 The other direction (here, -45°) is inclined to cause the ink jet head to scan a plurality of times, and the strip-shaped first layer is formed along the direction. In this manner, the first layer in the form of a lattice formed by oblique lines inclined from the longitudinal direction of the substrate 1 can be formed.

圖6，係為對於第1層21之形成過程的又一其他例作說明之說明圖。 Fig. 6 is an explanatory view for explaining still another example of the formation process of the first layer 21.

於此例中，係與圖4之例相同的，為沿著基材1之長邊方向而使噴墨頭作複數次之掃描並形成第1層(圖6(a))，並進而沿著短邊方向而使噴墨頭作複數次之掃描並形成第1層(圖6(b))者，但是，係藉由對於從噴墨頭而來的墨水所進行之射出控制，而形成由波狀之線所成的格子狀之第1層。 In this example, the same as in the example of FIG. 4, the inkjet head is scanned a plurality of times along the longitudinal direction of the substrate 1 to form the first layer (Fig. 6(a)), and further along In the short-side direction, the ink-jet head is scanned for a plurality of times to form the first layer (Fig. 6(b)), but is formed by the emission control of the ink from the ink-jet head. The first layer in the form of a grid formed by wavy lines.

例如，當將被形成有導電性圖案之基材1與其他之構件相互重疊並形成裝置的情況等時，會有在導電性圖案和被設置於其他構件處之圖案之間而產生干涉紋的情形，但是，藉由例如圖5之例一般地使圖案從基材之長邊方向(或者是短邊方向)而傾斜、或者是例如圖6之例 一般地使構成圖案之線波狀線化，係能夠得到可適當地防止干涉紋之發生的效果。 For example, when the substrate 1 on which the conductive pattern is formed and other members are overlapped with each other to form a device, etc., an interference pattern may be generated between the conductive pattern and the pattern provided at the other member. In the case, for example, the pattern is generally inclined from the longitudinal direction (or the short side direction) of the substrate by, for example, the example of FIG. 5, or is, for example, the example of FIG. Generally, the line constituting the pattern is wavy, and the effect of appropriately preventing the occurrence of interference fringes can be obtained.

被賦予至基材1上之墨水之乾燥製程，係並未特別作限定，但是，例如，較理想，係使用從使印刷中之基材1乾燥之製程、在印刷後進行加熱之製程、在印刷後進行送風之製程、以及在印刷後進行光照射之製程，此些之製程中所選擇的1或複數之組合。 The drying process of the ink to be applied to the substrate 1 is not particularly limited. For example, it is preferred to use a process for drying the substrate 1 during printing and a process for heating after printing. A process of supplying air after printing, and a process of performing light irradiation after printing, and a combination of 1 or a plurality selected in the processes of the processes.

特別是，係以使印刷中之基材1乾燥為理想，例如，係以使基材1之溫度成為40℃~80℃的方式來進行加熱為理想。當實行在印刷後再進行加熱之製程的情況時，亦係以將基材1加熱至該溫度範圍為理想。 In particular, it is preferable to dry the substrate 1 during printing, for example, heating the substrate 1 at a temperature of 40 ° C to 80 ° C. When the process of heating after printing is carried out, it is also preferable to heat the substrate 1 to this temperature range.

印刷後之乾燥製程，係以在一結束印刷後立即進行為理想。 The drying process after printing is ideal immediately after the end of printing.

在光照射中所使用之光，只要是能夠促進墨水之乾燥者，則係並未特別作限定，但是，係可合適例示有紅外線等。 The light to be used for the light irradiation is not particularly limited as long as it can promote the drying of the ink. However, infrared rays or the like can be suitably exemplified.

作為在將導電材料選擇性地作堆積的製程後之後續處理，若是施加第1層21之低電阻化處理，則亦為理想。藉由對於第1層21施加例如從加熱處理、化學處理、光照射處理中所選擇之處理，係能夠謀求低電阻化。 It is also preferable to perform the subsequent treatment after the process of selectively depositing the conductive material, if the low-resistance treatment of the first layer 21 is applied. By applying the treatment selected from the heat treatment, the chemical treatment, and the light irradiation treatment to the first layer 21, for example, it is possible to reduce the resistance.

加熱處理之溫度，係並未特別作限定，但是，係可使用80℃~300℃之範圍的溫度。當基材1為薄膜的情況時，係以適用80℃~180℃之範圍的溫度為理 想。 The temperature of the heat treatment is not particularly limited, but a temperature in the range of 80 ° C to 300 ° C can be used. When the substrate 1 is a film, it is suitable for the temperature in the range of 80 ° C to 180 ° C. miss you.

作為化學處理，例如，係可合適例示有將導電材料中之有機物等除去的處理，亦可使用以酸性或鹼性之洗淨水溶液來進行洗淨之方法、以溶劑或溶劑水溶液來進行洗淨之方法等。 For the chemical treatment, for example, a treatment for removing an organic substance or the like in a conductive material may be suitably exemplified, and a method of washing with an acidic or alkaline washing aqueous solution may be used, and washing with a solvent or an aqueous solvent solution may be used. Method and so on.

在光照射處理中，例如，係可使用閃光燒結(Flash sintering)、IR照射。 In the light irradiation treatment, for example, flash sintering or IR irradiation can be used.

係可對於第1層21而施加將以上所說明了的處理之1者或複數作了組合的低電阻化處理。 For the first layer 21, a low resistance processing in which one or a combination of the above-described processes is combined may be applied.

此種低電阻化處理，係亦可在印刷中進行。例如，當藉由噴墨法而以複數次之掃描來完成圖案的情況時，係可在其之途中階段處，而1次性地或者是分成複數次地來在途中加入低電阻化處理。特別是，當如同上述一般地對於基材而從複數之方向來進行複數次之印刷的情況時，在途中加入低電阻化處理一事係為理想。 Such a low resistance treatment can also be carried out during printing. For example, when the pattern is completed by scanning by a plurality of times by the ink-jet method, the low-resistance processing can be added on the way at the intermediate stage, and once or plural times. In particular, when printing is performed plural times from the plural direction as described above for the substrate, it is preferable to add a low-resistance treatment in the middle.

當形成第2層22時，係以使用電化學性製程為理想。作為電化學性之製程，較理想，係使用無電解電鍍以及電解電鍍之其中一者或者是兩者之組合。 When the second layer 22 is formed, it is desirable to use an electrochemical process. As an electrochemical process, it is preferable to use one of electroless plating and electrolytic plating or a combination of both.

所謂電解電鍍法，係指使用溶解有欲使其作為電鍍而析出之金屬離子的溶液並在具有電導性的物體上藉由電解來使金屬析出的方法。於此，作為具有電導性之物體，係可利用第1層21，來形成第2層22。 The electrolytic plating method refers to a method of depositing a metal by electrolysis using a solution in which a metal ion to be precipitated as a plating is dissolved and which is deposited on an electrically conductive object. Here, as the electrically conductive object, the second layer 22 can be formed by the first layer 21.

所謂無電解電鍍法，係指使用溶解有欲使其作為電鍍而析出之金屬離子的溶液並在觸媒上藉由化學反 應來使金屬析出的方法。於此，作為觸媒，係可利用第1層21，來形成第2層22。 The electroless plating method refers to the use of a solution in which a metal ion to be precipitated as electroplating is dissolved and chemically reacted on the catalyst. A method of precipitating metals. Here, as the catalyst, the second layer 22 can be formed by using the first layer 21.

若是以被與導電性圖案之至少一部分作連接的方式來形成有集電線(以下，係有稱作導出電極或導出配線的情形)，則亦為理想。 It is also preferable to form a collecting wire (hereinafter referred to as a lead-out electrode or a lead-out wiring) so as to be connected to at least a part of the conductive pattern.

圖7，係為對於集電線之形成例作展示之圖。 Fig. 7 is a view showing an example of formation of a collecting wire.

在此例中，於基板1上，係設置有4個的導電性圖案50。 In this example, four conductive patterns 50 are provided on the substrate 1.

集電線3，係以包圍各個的導電性圖案50的方式而被設置在基板1上，並被與構成該導電性圖案50之導電性細線2的其中一部分作連接。 The collecting wires 3 are provided on the substrate 1 so as to surround the respective conductive patterns 50, and are connected to a part of the conductive thin wires 2 constituting the conductive patterns 50.

集電線3，係更進而被與配線4作連接，該配線4，係一直延伸設置至基板1之端部處。 The collecting wire 3 is further connected to the wiring 4, and the wiring 4 is extended to the end of the substrate 1.

集電線3之線寬幅，係較構成導電性圖案50之導電性細線2的線寬幅更粗，較理想係可設為15μm以上，更理想係可設為50μm以上，最理想係可設為100μm以上。線寬幅之上限，係並未特別作限定，但是，係以未滿5mm為理想。在集電線3處，與構成導電性圖案50之導電性細線2直接作結合的部分之線寬幅，較理想係為15μm以上未滿100μm。 The line width of the collecting wire 3 is thicker than the thickness of the conductive thin wire 2 constituting the conductive pattern 50, and is preferably 15 μm or more, more preferably 50 μm or more, and most preferably It is 100 μm or more. The upper limit of the line width is not particularly limited, but it is preferably less than 5 mm. The line width of the portion directly joined to the conductive thin wires 2 constituting the conductive pattern 50 at the collecting wire 3 is preferably 15 μm or more and less than 100 μm.

在上述之例中，雖係針對集電線3為沿著作為全體而呈現方形狀的導電性圖案50之4邊來作設置的例子而作了展示，但是，例如若是沿著相對向之2邊而作設置，或是沿著1邊而作設置，亦為理想。又，係並非絕 對需要沿著邊來作設置，只要至少與構成導電性圖案50之導電性細線2的其中一部分作連接即可。 In the above-described example, the collecting wire 3 is provided as an example in which four sides of the conductive pattern 50 having a square shape are formed as a whole, but, for example, if it is along two opposite sides It is also ideal for setting up, or setting it along one side. Again, it’s not absolutely It is necessary to provide along the side as long as it is at least connected to a part of the conductive thin wires 2 constituting the conductive pattern 50.

當將導電性細線2之第2層22藉由電化學性製程來形成時，較理想，係將集電線3，在形成第2層22之前，先以會與第1層21之至少一部分作連接的方式來預先形成之。此時，集電線3，係可在第1層21之形成前而先形成，亦可在第1層21之形成後再形成。由於係成為能夠經由集電線3來安定地對於第1層21作通電，因此，係成為能夠安定地進行由電化學性製程、特別是由電解電鍍所致之第2層22的形成。 When the second layer 22 of the conductive thin wires 2 is formed by an electrochemical process, it is preferable that the current collecting wires 3 are formed at least in part with the first layer 21 before forming the second layer 22. The way to connect is pre-formed. At this time, the collecting wire 3 may be formed before the formation of the first layer 21, or may be formed after the formation of the first layer 21. Since the first layer 21 can be energized stably via the collecting wire 3, it is possible to stably form the second layer 22 by an electrochemical process, particularly electrolytic plating.

又，集電線3，在已完成的製品中，亦能夠確保有對於導電性圖案50之安定的通電。 Further, in the integrated product 3, it is possible to ensure the energization of the conductive pattern 50 in the completed product.

圖8，係為對於構成第2形態之導電性圖案的導電性細線之其他例作展示之剖面圖。 Fig. 8 is a cross-sectional view showing another example of the conductive thin wires constituting the conductive pattern of the second embodiment.

在第2形態中，導電性細線2，作為構成其之至少一部分的多層構造之構成要素，係除了上述之第1層21、第2層22以外，更進而在第2層22之與第1層21相反側處具備有第3層23。 In the second embodiment, the conductive thin wires 2 are constituent elements of the multilayer structure constituting at least a part thereof, in addition to the first layer 21 and the second layer 22 described above, and further in the second layer 22 and the first layer A third layer 23 is provided on the opposite side of the layer 21.

第3層23之材質，係並未特別作限定，但是，較理想，係包含有從金屬、金屬氧化物以及有機物中所選擇的至少1者。 The material of the third layer 23 is not particularly limited, but preferably contains at least one selected from the group consisting of metals, metal oxides, and organic materials.

當作為第3層23而使用金屬層的情況時，係可合適例示有包含鎳或鉻之金屬層，具體而言，係以鎳單獨層、鉻單獨層以及鎳、鉻之混合層等為合適。 When a metal layer is used as the third layer 23, a metal layer containing nickel or chromium may be suitably exemplified, and specifically, a nickel single layer, a chromium single layer, a mixed layer of nickel and chromium, or the like is suitable. .

作為金屬氧化物，係可合適使用銅、銀、鎳、鉻、鐵、錫等之氧化物。又，亦可使用矽之氧化物。 As the metal oxide, an oxide of copper, silver, nickel, chromium, iron, tin or the like can be suitably used. Further, an oxide of cerium can also be used.

金屬氧化物，係可為單獨之金屬氧化物所成之層，亦可為複數之金屬氧化物所成之層。特別是以包含有銅之氧化物的層為理想。 The metal oxide may be a layer formed of a single metal oxide or a layer of a plurality of metal oxides. In particular, a layer containing an oxide of copper is preferred.

關於作為第3層23而形成金屬氧化物層之方法，係可列舉出蒸鍍法、濺鍍法、以及對於第2層之金屬層的表面進行氧化處理而形成金屬氧化物層之方法。 The method of forming the metal oxide layer as the third layer 23 includes a vapor deposition method, a sputtering method, and a method of forming a metal oxide layer by oxidizing the surface of the metal layer of the second layer.

第3層23，係亦可為藉由將金屬氧化層之皮膜直接作塗布等所形成的氧化皮膜。 The third layer 23 may be an oxide film formed by directly coating a film of a metal oxide layer.

特別理想之製程，係為在對於第1層之包含導電材料之層進行供電並藉由電解電鍍法而形成第2層之方法，更進而接續於第2層之形成而以連續性之製程來將第3層藉由電解電鍍法來形成之製程。 A particularly desirable process is a method in which a layer containing a conductive material in the first layer is supplied with electricity and a second layer is formed by electrolytic plating, and further, a process of continuity is continued following the formation of the second layer. The third layer is formed by electrolytic plating.

在製造第2形態之導電性圖案時，導電性細線2之第1層21以及第2層22之形成，係可使用作為在第1形態中之導電性圖案的製造方法所說明了的方法，並可藉由在第2層22之上形成第3層23，而製造出第2形態之導電性圖案。 When the conductive pattern of the second embodiment is produced, the first layer 21 and the second layer 22 of the conductive thin wires 2 can be formed by using the method described in the first aspect of the present invention. The second layer 23 can be formed on the second layer 22 to produce a conductive pattern of the second embodiment.

形成第3層23之方法，係並未特別作限定，但是，係以使用電化學性製程為理想。 The method of forming the third layer 23 is not particularly limited, but it is preferably an electrochemical process.

當第3層23為藉由耐腐蝕性金屬等之金屬所構成的情況時，作為電化學性之製程，較理想，係使用無電解電鍍以及電解電鍍之其中一者或者是兩者之組合。 When the third layer 23 is made of a metal such as a corrosion-resistant metal, it is preferable to use one of electroless plating and electrolytic plating or a combination of both as an electrochemical process.

又，當第3層為藉由有機膜等所構成的情況時，較理想，係使用從電著法、電解聚合法等所選擇之方法。此時，係可作為電極而利用第1層21、第2層22，來形成第3層23。 Further, when the third layer is formed of an organic film or the like, a method selected from an electroforming method, an electrolytic polymerization method, or the like is preferably used. At this time, the third layer 23 can be formed by using the first layer 21 and the second layer 22 as electrodes.

在以上之說明中，雖係針對在基材1之單面上形成導電性圖案的例子作了展示，但是本發明係並不被限定於此。 In the above description, although an example in which a conductive pattern is formed on one surface of the substrate 1 is shown, the present invention is not limited thereto.

若是在基材1之兩面上被形成有以上所說明了的導電性圖案，則亦為理想。 It is also preferable if the conductive pattern described above is formed on both surfaces of the substrate 1.

基材1之兩面，較理想，係在導電性圖案的形成之前，先預先被施加有上述之表面處理。表面處理，係可在基材1之表面以及背面而施加同一之表面處理，亦可施加相異之表面處理。 It is preferable that both surfaces of the substrate 1 are subjected to the above-described surface treatment in advance before the formation of the conductive pattern. For the surface treatment, the same surface treatment may be applied to the surface and the back surface of the substrate 1, and a different surface treatment may be applied.

在基材1之表面和背面處所分別設置之導電性圖案，係可為相同，亦可為相異。又，在表面和背面處，導電性細線2之第1層21、第2層22的構成，係可為相同，亦可為相異。若是身為第2形態之導電性圖案，則關於第3層23之構成，亦同樣的，在表面和背面處，係可為相同，亦可為相異。亦可在其中一面上形成第1形態之導電性圖案，並在另外一面上形成第2形態之導電性圖案。 The conductive patterns respectively provided on the surface and the back surface of the substrate 1 may be the same or different. Further, the configuration of the first layer 21 and the second layer 22 of the conductive thin wires 2 may be the same or different in the front and back surfaces. In the case of the conductive pattern of the second embodiment, the configuration of the third layer 23 may be the same or different on the surface and the back surface. A conductive pattern of the first aspect may be formed on one surface thereof, and a conductive pattern of the second aspect may be formed on the other surface.

圖9，係為對於在兩面上形成有導電性圖案的基材1之其中一例作展示之圖，圖9(a)係對於表面作平面性觀察，圖9(b)係對於背面作平面性觀察。 Fig. 9 is a view showing an example of a substrate 1 having a conductive pattern formed on both surfaces, Fig. 9(a) is a planar observation of the surface, and Fig. 9(b) is planar for the back surface. Observed.

如圖9(a)中所示一般，在基材1之表面上，係被設置有複數之導電性圖案50。此些之導電性圖案50，係為由藉由從基材1之長邊方向而作了傾斜的斜線所構成的導電性細線2而形成之格子狀圖案。 As shown generally in Fig. 9(a), on the surface of the substrate 1, a plurality of conductive patterns 50 are provided. The conductive pattern 50 is a lattice pattern formed by the conductive thin wires 2 which are formed by oblique lines which are inclined from the longitudinal direction of the substrate 1.

被設置在表面上之此些之導電性圖案50，作為全體係呈現方形狀(短籤狀)，其長邊係沿著基材1之短邊方向而被作配置。 The conductive patterns 50 provided on the surface are formed in a square shape (short-shaped shape) as a whole system, and the long sides thereof are arranged along the short side direction of the substrate 1.

又，在此些之導電性圖案50處，係以在4邊而包圍該導電性圖案50的方式而被設置有集電線3。 Further, in the conductive patterns 50, the current collecting wires 3 are provided so as to surround the conductive patterns 50 on four sides.

另一方面，如圖9(b)中所示一般，在基材1之背面上，係被設置有複數之導電性圖案50。此些之導電性圖案50，係為由藉由從基材1之長邊方向而作了傾斜的斜線所構成的導電性細線2而形成之格子狀圖案。 On the other hand, as shown in FIG. 9(b), a plurality of conductive patterns 50 are provided on the back surface of the substrate 1. The conductive pattern 50 is a lattice pattern formed by the conductive thin wires 2 which are formed by oblique lines which are inclined from the longitudinal direction of the substrate 1.

被設置在背面上之此些之導電性圖案50，作為全體係呈現方形狀(短籤狀)，其長邊係沿著基材1之長邊方向而被作配置。 The conductive patterns 50 provided on the back surface are formed in a square shape (short-shaped shape) as a whole system, and the long sides thereof are arranged along the longitudinal direction of the substrate 1.

又，在此些之導電性圖案50處，係以在4邊而包圍該導電性圖案50的方式而被設置有集電線3。 Further, in the conductive patterns 50, the current collecting wires 3 are provided so as to surround the conductive patterns 50 on four sides.

被設置在表面上並朝向基材1之短邊方向而延伸的短籤狀之導電性圖案50、和被設置在背面上並朝向基材1之長邊方向而延伸的短籤狀之導電性圖案50，係包夾著基材1而立體性地相互交叉，並被配置為格子狀。此種圖案，例如係可在由薄膜所成之1枚基材上，作為在靜電電容式觸控感測器中的X、Y圖案而合適地作使 用。係可將表面之導電性圖案50和背面之導電性圖案50中的其中一方作為X圖案，並將另外一方作為Y圖案。 A short-shaped conductive pattern 50 which is provided on the surface and extends toward the short side direction of the substrate 1 and a short-shaped conductive layer which is provided on the back surface and extends toward the longitudinal direction of the substrate 1 The pattern 50 is formed so as to be lattice-shaped in a three-dimensional manner while sandwiching the substrate 1 . Such a pattern can be suitably made, for example, on a substrate made of a film as an X, Y pattern in a capacitive touch sensor. use. One of the surface conductive pattern 50 and the back surface conductive pattern 50 may be an X pattern, and the other one may be a Y pattern.

接著，列舉出用以製造附導電性圖案基材之製造裝置的例子，而針對本發明作更詳細之說明。 Next, an example of a manufacturing apparatus for manufacturing a conductive pattern substrate will be described, and the present invention will be described in more detail.

圖10，係為對於用以製造附導電性圖案基材之製造裝置的其中一例作展示之說明圖。 Fig. 10 is an explanatory view showing an example of a manufacturing apparatus for manufacturing a conductive pattern substrate.

圖示之製造裝置，係構成為藉由卷至卷方式來在基材上形成導電性圖案。 The manufacturing apparatus shown in the figure is configured to form a conductive pattern on a substrate by a roll-to-roll method.

5，係為捲繞有基材之捲繞體，6，係為第1層形成區域，7，係為支持輥，8，係為乾燥區域，9，係為低電阻化區域，10，係為第2層形成區域，11，係為第3層形成區域，12，係為捲繞有被形成了圖案後之基材的捲繞體。 5, is a wound body wound with a substrate, 6, is a first layer forming region, 7, is a support roller, 8 is a dry region, 9, is a low resistance region, 10, is The second layer formation region, 11 is a third layer formation region, and 12 is a wound body around which a patterned substrate is wound.

從捲繞體5而被送出之帶狀之基材1，於直到被捲取於捲繞體12上為止的搬送過程中，係成為在基材1上而被形成有導電性圖案。在以下之說明中，係有將從捲繞體5而朝向捲繞體12之方向稱作搬送方向的情況。 The belt-shaped base material 1 which is sent out from the wound body 5 is formed with a conductive pattern on the base material 1 during the conveyance until it is wound up on the wound body 12. In the following description, the direction from the wound body 5 toward the wound body 12 is referred to as a conveyance direction.

從捲繞體5而被送出之帶狀的基材1，係被搬送至用以形成第1層21的第1層形成區域6處。 The strip-shaped substrate 1 that is fed out from the wound body 5 is conveyed to the first layer forming region 6 where the first layer 21 is formed.

圖11，係為對於第1層形成區域6的基本構成作說明之概略平面圖。 Fig. 11 is a schematic plan view for explaining a basic configuration of the first layer forming region 6.

如圖11中所示一般，在此例中，於第1層形成區域6處，係設置有用以形成第1層21之噴頭陣列61，並且亦一併設置有用以描繪導出配線3的噴墨頭 62。噴頭陣列61，係可將複數之噴墨頭配置成陣列狀來構成之。 As shown in Fig. 11, in general, in this example, at the first layer forming region 6, a head array 61 for forming the first layer 21 is provided, and an ink jet for usefully drawing the lead wiring 3 is also provided. head 62. The head array 61 is constructed by arranging a plurality of ink jet heads in an array.

於第1層形成區域6處，首先，係藉由用以描繪導出配線的噴墨頭62，來在基材1上形成導出配線3。 In the first layer forming region 6, first, the lead wiring 3 is formed on the substrate 1 by the ink jet head 62 for drawing the lead wiring.

被形成有導出配線3之基材1的區域，係一直被搬送至乾燥區域8處，並於此處被進行乾燥處理。 The region of the substrate 1 on which the lead wires 3 are formed is always transported to the drying region 8, where it is dried.

之後，基材1之該區域，係被朝向前往捲繞體5之方向而作一定之量的逆搬送，而再度被供給至第1層形成區域6處。 Thereafter, the region of the substrate 1 is reversely conveyed in a certain amount toward the winding body 5, and is again supplied to the first layer forming region 6.

之後，藉由被設置在第1層形成區域6處之用以形成第1層21的噴頭陣列61，在基材1上係被形成第1層21。 Thereafter, the first layer 21 is formed on the substrate 1 by the head array 61 for forming the first layer 21 provided in the first layer formation region 6.

圖12，係為對於在第1層形成區域6處之第1層21之形成過程的其中一例作說明之圖。 Fig. 12 is a view for explaining an example of a process of forming the first layer 21 at the first layer forming region 6.

如同圖12(a)中所示一般，在形成過程中之第1印刷工程處，係一面於搬送方向上搬送基材1，一面使噴頭陣列61在與搬送方向相正交之方向(圖中之朝向右方之方向)上作掃描。如此這般，藉由使基材1和噴頭陣列61同時移動，係能夠相對於基材1而使噴頭陣列61在傾斜方向上作相對移動。在此相對移動之過程中，藉由從噴頭陣列61而將包含有導電材料之墨水射出至基材1上，係能夠描繪出相對於基材1之搬送方向而以特定之角度來作了傾斜的線段。例如，藉由使基材1之搬送速度和 噴頭陣列61之掃描速度成為相同，係能夠描繪出以45°來作了傾斜的線段。傾斜角，係可藉由對於噴頭陣列61之掃描速度及/或基材1之搬送速度進行調整，來設為任意之值。 As shown in FIG. 12( a ), in the first printing project in the forming process, the substrate 1 is conveyed in the transport direction, and the head array 61 is oriented in a direction orthogonal to the transport direction (in the figure). Scanning in the direction of the right side). In this manner, by simultaneously moving the substrate 1 and the head array 61, the head array 61 can be relatively moved in the oblique direction with respect to the substrate 1. During the relative movement, by ejecting the ink containing the conductive material from the head array 61 onto the substrate 1, it is possible to draw the tilt at a specific angle with respect to the transport direction of the substrate 1. Line segment. For example, by moving the substrate 1 and The scanning speed of the head array 61 is the same, and it is possible to draw a line segment which is inclined at 45°. The tilt angle can be set to an arbitrary value by adjusting the scanning speed of the head array 61 and/or the conveying speed of the substrate 1.

接著，被形成有線段之基材1的區域，係一直被搬送至乾燥區域8處，並於此處被進行乾燥處理。藉由對於此乾燥製程作控制，係能夠在線段之線寬幅方向兩端處選擇性地堆積導電材料。 Next, the region of the substrate 1 on which the wire segment is formed is conveyed to the drying region 8 at all times, and is dried there. By controlling the drying process, it is possible to selectively deposit conductive materials at both ends of the line width direction of the line segment.

之後，基材1之該區域，係被朝向前往捲繞體5之方向而作一定之量的逆搬送，而被供給至第1層形成區域6處之第2印刷工程中。 Thereafter, the region of the substrate 1 is reversely conveyed in a certain amount toward the winding body 5, and is supplied to the second printing project at the first layer forming region 6.

如同圖12(b)中所示一般，在第2印刷工程處，係一面於搬送方向上搬送基材1，一面使噴頭陣列61在與搬送方向相正交之方向且為與第1印刷工程中之掃描方向相反的方向(圖中之朝向左方之方向)上作掃描。在此相對移動之過程中，藉由從噴頭陣列61而將包含有導電材料之墨水射出至基材1上，係能夠描繪出相對於基材1之搬送方向而朝向與第1印刷工程相反之方向來以特定之角度而作了傾斜的線段。例如，藉由使基材1之搬送速度和噴頭陣列61之掃描速度成為相同，係能夠描繪出以-45°來作了傾斜的線段。若是設為此種構成，則如同圖示一般，係亦能夠使在第1印刷工程中所形成的線段(傾斜角45°)和在第2印刷工程中所形成的線段(傾斜角-45°)以直角而相交。 As shown in FIG. 12(b), in the second printing project, the substrate 1 is conveyed in the transport direction, and the head array 61 is oriented in the direction orthogonal to the transport direction and is printed with the first printing project. The scan is performed in the opposite direction of the scan direction (the direction toward the left in the figure). During the relative movement, by ejecting the ink containing the conductive material from the head array 61 onto the substrate 1, it is possible to draw the direction opposite to the first printing project with respect to the transport direction of the substrate 1. The direction is the line segment that is tilted at a specific angle. For example, by making the transport speed of the substrate 1 and the scanning speed of the head array 61 the same, it is possible to draw a line segment which is inclined at -45°. According to this configuration, as shown in the figure, the line segment (inclination angle 45°) formed in the first printing project and the line segment formed in the second printing project (tilt angle -45°) can be used. ) intersect at right angles.

接著，被形成有線段之基材1的區域，係一直被搬送至乾燥區域8處，並於此處被進行乾燥處理。藉由對於此乾燥製程作控制，針對在第2印刷工程中所形成之線段，係亦能夠在線段之線寬幅方向兩端處選擇性地堆積導電材料。 Next, the region of the substrate 1 on which the wire segment is formed is conveyed to the drying region 8 at all times, and is dried there. By controlling the drying process, it is also possible to selectively deposit conductive materials at both ends in the line width direction of the line segment for the line segments formed in the second printing process.

如此這般，係能夠形成由斜線所成之格子狀的第1層21。 In this manner, the first layer 21 formed in a lattice shape by oblique lines can be formed.

被形成有第1層21之基材1的區域，係被搬送至低電阻化區域9處。 The region of the substrate 1 on which the first layer 21 is formed is transported to the low-resistance region 9.

在此例中，於低電阻化區域9處，係設置有烤箱，藉由以該烤箱來加熱基材1，而施加第1層21之低電阻化處理。 In this example, an oven is provided in the low-resistance region 9, and the substrate 1 is heated by the oven to apply a low-resistance treatment of the first layer 21.

被施加了低電阻化處理之基材1的區域，係被搬送至第2層形成區域10處。 The region of the substrate 1 to which the low resistance treatment is applied is transported to the second layer formation region 10.

在此例中，於第2層形成區域10處，係設置有用以形成第2層22之電解電鍍裝置。 In this example, an electrolytic plating apparatus for forming the second layer 22 is provided at the second layer forming region 10.

電解電鍍裝置，例如，係形成將基材1架掛在複數之搬送輥上的搬送系，並將此些之搬送輥中的1個或2個以上作為外部電極，而浸漬在電鍍槽內之電鍍液(亦稱作電鍍浴、電解液等)中，而構成之。在電鍍液中，係設置有對極。 In the electrolytic plating apparatus, for example, a transport system in which the substrate 1 is hung on a plurality of transport rollers is formed, and one or two or more of the transport rollers are used as external electrodes, and are immersed in the plating tank. It is composed of a plating solution (also called an electroplating bath, an electrolyte, etc.). In the plating solution, a counter electrode is provided.

藉由電解電鍍裝置，來從外部電極而經由導出配線3來對於第1層21進行供電，並在電鍍液中進行電解電鍍，而可形成第2層22。 The first layer 21 is supplied with power from the external electrode via the lead-out wiring 3 by electrolytic plating, and electrolytic plating is performed in the plating solution to form the second layer 22.

在第2層形成區域10處，較理想，係設置有將電解電鍍結束後之基材1的區域藉由水等之洗淨液來洗淨的洗淨機和使洗淨液乾燥之乾燥機等。 In the second layer formation region 10, a cleaning machine that cleans the region of the substrate 1 after the electrolytic plating is completed by a washing liquid such as water, and a dryer that dries the cleaning liquid are preferably provided. Wait.

在此例中，被形成有第2層22之基材1的區域，係更進而被搬送至第3層形成區域11處。 In this example, the region of the substrate 1 on which the second layer 22 is formed is further conveyed to the third layer formation region 11.

於第3層形成區域11處，係設置有用以形成第3層23之電解電鍍裝置。在該電解電鍍裝置之基本構成中，係可援用在第2層形成區域10處所作了說明的構成。如同此例一般，特別理想之製程，係為使用對於第1層之包含導電材料之層進行供電並藉由電解電鍍法而形成第2層，再更進而接續於第2層之形成而以連續性之製程來將第3層藉由電解電鍍法來形成之製程。 At the third layer formation region 11, an electrolytic plating apparatus for forming the third layer 23 is provided. In the basic configuration of the electrolytic plating apparatus, the configuration described in the second layer forming region 10 can be used. As in this case, a particularly desirable process is to use a layer containing a conductive material for the first layer and to form a second layer by electrolytic plating, and further continuous with the formation of the second layer. The process of forming the third layer by electroplating.

在第3層形成區域11處，亦同樣的，較理想，係設置有將電解電鍍結束後之基材1的區域藉由水等之洗淨液來洗淨的洗淨機和使洗淨液乾燥之乾燥機等。 In the third layer forming region 11, it is preferable to provide a washing machine and a cleaning liquid for washing the region of the substrate 1 after the electrolytic plating is completed by a washing liquid such as water. Dry dryer, etc.

如同上述一般，係能夠在基材1上形成導電性圖案。被形成有導電性圖案之基材1的區域，係可構成為依序被捲繞於捲繞體12上。 As described above, a conductive pattern can be formed on the substrate 1. The region of the substrate 1 on which the conductive pattern is formed may be configured to be wound around the wound body 12 in order.

圖13，係為對於用以製造附導電性圖案基材之製造裝置的其他例作展示之說明圖。圖中，與圖10相同的元件符號，係可設為相同之構成，並可援用在圖10中所進行之說明。 Fig. 13 is an explanatory view showing another example of a manufacturing apparatus for manufacturing a conductive pattern substrate. In the drawings, the same component symbols as those in Fig. 10 can be configured in the same manner, and the description made in Fig. 10 can be applied.

在此例中所示之製造裝置，係能夠合適地使用來在基材之兩面上形成導電性圖案。 The manufacturing apparatus shown in this example can be suitably used to form a conductive pattern on both surfaces of the substrate.

首先，在上游側生產線A處，於從捲繞體13而被送出之帶狀的基材1之其中一面(表面)上，係與圖10之例相同的，藉由第1層形成區域6、乾燥區域8處之處理，而被形成有第1層21。 First, on the upstream side production line A, on one surface (surface) of the strip-shaped base material 1 which is fed from the wound body 13, the same as in the example of Fig. 10, the first layer formation region 6 is formed. The first layer 21 is formed by processing at 8 in the dry region.

在其中一面(表面)上被形成有第1層21之基材1，係被捲繞於捲繞體14上。 The base material 1 on which one surface (surface) is formed with the first layer 21 is wound around the wound body 14.

在結束了捲繞時，將捲繞體14置換為捲繞體13，並且以使表、背面會成為相反的方式來作設置，此次，係再度藉由第1層形成區域6、乾燥區域8之處理，來在基材1之另外一面(背面)上形成第1層21。 When the winding is completed, the wound body 14 is replaced with the wound body 13, and the front and back surfaces are reversed. This time, the first layer forming region 6 and the drying region are again used. The treatment of 8 is to form the first layer 21 on the other side (back surface) of the substrate 1.

如此這般，將在基材1之兩面上被形成有第1層21之基材1，逐漸捲繞於捲繞體14上。 In this manner, the substrate 1 on which the first layer 21 is formed on both surfaces of the substrate 1 is gradually wound around the wound body 14.

接著，捲繞體14，係作為捲繞體15而被設置在下游側生產線B處。 Next, the wound body 14 is provided as the wound body 15 at the downstream side production line B.

在下游側生產線B處，係對於從捲繞體15而被送出之帶狀的基材1，而與圖10之例相同的，藉由低電阻化區域9、第2層形成區域10以及第3層形成區域11處之處理，而進行有第1層之低電阻化、第2層22之形成以及第3層23之形成，之後，結束了各處理之基材1，係被捲繞在捲繞體16上。 In the downstream side production line B, the strip-shaped base material 1 which is sent out from the wound body 15 is the same as the example of FIG. 10, and the low-resistance region 9, the second layer formation region 10, and the The treatment of the three-layer formation region 11 is performed to reduce the resistance of the first layer, the formation of the second layer 22, and the formation of the third layer 23. Thereafter, the substrate 1 which has finished the respective processes is wound up in the same manner. On the winding body 16.

下游生產線B之各處理，由於係分別易於對基材1之兩面而同時作適用，因此，係易於構成為將在下游生產線B處之卷至卷製程以1次的通過來結束。 Since the respective processes of the downstream line B are easy to apply to both sides of the substrate 1 at the same time, it is easy to be configured to end the winding to the winding process at the downstream line B once.

接著，針對用以使在藉由讓平行線圖案相互 交叉所構成的圖案(亦稱作網格狀或格子狀之圖案)中之細線的直線性提高之調整作說明。 Next, the aim is to make the parallel line patterns by The adjustment of the linearity improvement of the thin lines in the pattern formed by the intersection (also referred to as a grid or grid pattern) will be described.

設為網格狀之導電性圖案一事，對於實現在保持有低視覺辨認性的狀態下而於基材上使導電材料分布一事而言，係為有利。 It is advantageous to provide a conductive pattern in a grid shape in order to realize distribution of a conductive material on a substrate while maintaining low visibility.

特別是，構成如同上述一般所形成的平行線圖案之線段，由於係能夠實現數μm之線寬幅，因此，藉由該微細之線寬幅，網格狀之導電性圖案，就算是導電材料自身並非為透明，也不會被人類的眼睛所辨識出來，而看起來就如同透明一般。 In particular, since the line segments constituting the parallel line pattern formed as described above are capable of realizing a line width of several μm, the conductive pattern of the grid shape is a conductive material by the fine line width. It is not transparent, it is not recognized by human eyes, and it looks like transparency.

導電材料之細線圖案的形狀，係可依據裝置來作設定。作為裝置之其中一例，被使用在觸控面板中之觸控感測器，係為了檢測出由手指等所指示的位置，而使用有透明之面電極。 The shape of the thin line pattern of the conductive material can be set according to the device. As an example of the device, a touch sensor used in a touch panel uses a transparent surface electrode in order to detect a position indicated by a finger or the like.

網格狀之導電性圖案，係可合適適用在觸控面板等之透明的面電極等中。從構成面電極等的觀點來看，藉由形成方向互為相異之複數的平行線圖案來構成網格狀一事，在增加導電路徑的觀點上而言，係為非常有效。 The grid-like conductive pattern can be suitably applied to a transparent surface electrode or the like of a touch panel or the like. From the viewpoint of constituting the surface electrode and the like, it is very effective to form a mesh shape by forming a plurality of parallel line patterns whose directions are different from each other, and it is effective in increasing the conductive path.

作為形成此種網格狀之導電性圖案的形成方法，係可列舉出圖14中所示之方法。 As a method of forming such a grid-like conductive pattern, the method shown in Fig. 14 can be cited.

首先，如同圖14(a)中所示一般，在基材1上，將線狀液體102塗布為網格狀。亦即是，係以會在交叉部X處而相互交叉的方式，來塗布線狀液體102。 First, as shown in Fig. 14 (a), the linear liquid 102 is applied to the substrate 1 in a grid shape. That is, the linear liquid 102 is applied in such a manner as to intersect each other at the intersection X.

接著，藉由使線狀液體102乾燥，如同圖14(b)中所示一般，係能夠形成由平行線圖案103所成的網格狀圖案。 Next, by drying the linear liquid 102, as shown in FIG. 14(b), a grid-like pattern formed by the parallel line patterns 103 can be formed.

此時，在線狀液體102中所包含之導電材料係堆積在緣部處，其結果，在方向相異之平行線所相交的交叉部X處，線段131、132係成為被截斷。 At this time, the conductive material contained in the linear liquid 102 is deposited at the edge portion, and as a result, the line segments 131 and 132 are cut at the intersection portion X where the parallel lines having different directions intersect.

作為防止在交叉部X處之線段131、132的截斷之方法，係可列舉出圖15中所示之方法。 As a method of preventing the cutting of the line segments 131, 132 at the intersection X, the method shown in Fig. 15 can be cited.

在此例中，係於圖14所說明之方法中，如同圖15(a)中所示一般地，將藉由線狀液體102所形成的交點之部分的墨水量，設定為較其他之部分而更大。 In this example, in the method illustrated in Fig. 14, as shown in Fig. 15 (a), the ink amount of the portion of the intersection formed by the linear liquid 102 is set to be larger than the other portions. And bigger.

若依據此方法，則如同圖15(b)中所示一般，在由平行線圖案103所成的網格狀圖案中，係能夠防止在交叉部X處的線段131、132之截斷。 According to this method, as shown in Fig. 15 (b), in the grid pattern formed by the parallel line pattern 103, the cutoff of the line segments 131, 132 at the intersection portion X can be prevented.

此時，由於對於交叉部X的墨水量係有所增加，因此，如同圖15(b)中所示一般，交叉部X，係成為具備有較線段131、132之間隔而更大之直徑的環狀。 At this time, since the amount of ink for the intersection portion X is increased, as shown in FIG. 15(b), the intersection portion X is formed to have a larger diameter than the interval between the line segments 131 and 132. ring.

此種環狀之部分的產生，在防止線段131、132之截斷並例如成為容易確保導電性等的觀點來看，係為有利，但是，係會有週期性地視覺辨認出該環狀之部分的情形，而可以得知，在對於低視覺辨認性作更進一步之改善的觀點來看，係有所限度。 The generation of such a ring portion is advantageous in that the line segments 131 and 132 are prevented from being cut off, for example, from the viewpoint of easily ensuring conductivity, etc., but the ring portion is periodically visually recognized. In the case of the situation, it can be seen that there is a limit to the point of view of further improvement of low visual recognition.

又，作為防止在交叉部X處之線段131、132的截斷之方法，係亦可列舉出圖16中所示之方法。 Further, as a method of preventing the cutting of the line segments 131 and 132 at the intersection portion X, the method shown in Fig. 16 can also be cited.

首先，如同圖16(a)中所示一般，在第1方向(圖中之左右方向)上，塗布線狀液體102。 First, as shown in Fig. 16 (a), the linear liquid 102 is applied in the first direction (the horizontal direction in the drawing).

在使此線狀液體102乾燥的過程中，使導電材料在緣部處作選擇性的堆積，並如同圖16(b)中所示一般，形成第1平行線圖案103。 In the process of drying the linear liquid 102, the conductive material is selectively deposited at the edge portion, and as shown in Fig. 16 (b), the first parallel line pattern 103 is formed.

接著，如同圖16(c)中所示一般，在與第1方向相異之第2方向(在此例中，係為與第1方向相正交的方向，亦即是圖中之上下方向)上，塗布第2線狀液體104。亦即是，係以會相對於第1平行線圖案103之形成區域而相互交叉的方式，來塗布第2線狀液體104。 Next, as shown in FIG. 16(c), in the second direction different from the first direction (in this example, the direction is orthogonal to the first direction, that is, the upper and lower directions in the drawing) The second linear liquid 104 is applied. In other words, the second linear liquid 104 is applied so as to intersect each other with respect to the formation region of the first parallel line pattern 103.

在使此線狀液體104乾燥的過程中，使導電材料在緣部處作選擇性的堆積，並如同圖16(d)中所示一般，形成第2平行線圖案105。151、152，係為構成第2平行線圖案105之線段。 In the process of drying the linear liquid 104, the conductive material is selectively deposited at the edge portion, and as shown in Fig. 16 (d), a second parallel line pattern 105 is formed. 151, 152, It is a line segment constituting the second parallel line pattern 105.

如同上述一般，而形成由形成方向互為相異之第1平行線圖案103和第2平行線圖案105所成的網格狀之導電性圖案。 As described above, a grid-like conductive pattern formed by the first parallel line patterns 103 and the second parallel line patterns 105 which are different in direction from each other is formed.

若依據此方法，則在方向互為相異之平行線所相交的交叉部X處，係能夠分別防止線段131、132以及線段151、152之截斷。 According to this method, at the intersection X where the mutually parallel parallel lines intersect, it is possible to prevent the line segments 131, 132 and the line segments 151, 152 from being cut off, respectively.

圖17，係為對於交叉部X之形成例作展示之重要部分擴大圖。 Fig. 17 is an enlarged view of an important part showing an example of the formation of the intersection portion X.

在使用圖16而作了說明的例中，如同圖17(a)以及圖17(b)中所示一般，在交叉部X處，於構 成第2平行線圖案之線段151、152之間，係產生有膨脹(圖17(a))和縮窄(圖17(b))。在圖18(a)中，對於產生有膨脹之網格狀之導電性圖案的光學顯微鏡照片作展示。 In the example explained using FIG. 16, as shown in FIGS. 17(a) and 17(b), at the intersection X, Between the line segments 151 and 152 of the second parallel line pattern, expansion (Fig. 17 (a)) and narrowing (Fig. 17 (b)) are generated. In Fig. 18 (a), an optical micrograph showing an expanded grid-like conductive pattern is shown.

係得知了：該線段151、152之間的膨脹或縮窄，係會成為對於低視覺辨認性之提昇造成限制的原因。 It is known that the expansion or narrowing between the line segments 151, 152 is a cause of limitation for the improvement of low visibility.

又，係得知了：起因於該膨脹或縮窄，導電路徑之長度係會在沿著第1平行線圖案103之方向(第1方向)和沿著第2平行線圖案105之方向(第2方向)上而有所相異，從防止電阻之參差的觀點來看，係仍有著更進一步作改善的餘地。 Further, it is known that the length of the conductive path is in the direction along the first parallel line pattern 103 (first direction) and in the direction along the second parallel line pattern 105 (caused by the expansion or narrowing) In the 2 directions), there is a difference. From the viewpoint of preventing the variation of the resistance, there is still room for further improvement.

為了對此些問題作改善，在使用圖16所作了說明的例中，係如同圖17(c)中所示一般，針對構成第2平行線圖案105之2根的線段151、152間之間隔，係以使在第1平行線圖案103之形成區域內的平均間隔A和在第1平行線圖案103之形成區域外的平均間隔B會滿足下述式(1)的方式，來進行調整。 In order to improve on these problems, in the example explained using FIG. 16, as shown in FIG. 17(c), the interval between the line segments 151, 152 constituting the two second parallel line patterns 105 is shown. The adjustment is performed such that the average interval A in the formation region of the first parallel line pattern 103 and the average interval B outside the formation region of the first parallel line pattern 103 satisfy the following formula (1).

0.9≦B/A≦1.1‧‧‧式(1) 0.9≦B/A≦1.1‧‧‧(1)

藉由此，在所得到的網格狀之導電性圖案中，係能夠防止線段之斷線，並能夠使低視覺辨認性提昇，並且，係能夠使導電路徑之長度以高精確度而在前述第1方向和前述第2方向上成為相同，而能夠得到可對於電阻之參差適當地作抑制的效果。在圖18(b)中，對於 進行上述一般之調整所得到的網格狀之導電性圖案的光學顯微鏡照片作展示。 Thereby, in the obtained grid-like conductive pattern, it is possible to prevent the line segment from being broken, and it is possible to improve the low visibility, and it is possible to make the length of the conductive path with high precision in the foregoing. The first direction and the second direction are the same, and an effect that the variation of the electric resistance can be appropriately suppressed can be obtained. In Figure 18(b), for An optical micrograph of the grid-like conductive pattern obtained by the above general adjustment was shown.

所謂第1平行線圖案103之形成區域，係指從構成第1平行線圖案之其中一方的線段131起直到另外一方之線段132為止的區域，從其他觀點來看，係亦可代表為了形成第1平行線圖案103所賦予的第1線狀液體102之賦予區域。 The region in which the first parallel line pattern 103 is formed refers to a region from the line segment 131 constituting one of the first parallel line patterns to the other line segment 132. From another viewpoint, it may be representative 1 is a region to which the first linear liquid 102 is provided by the parallel line pattern 103.

針對構成第2平行線圖案105之線段151、152間之間隔，在第1平行線圖案103之形成區域內的平均間隔A、和在第1平行線圖案103之形成區域外的平均間隔B，係分別可設為在複數的場所處所作了測定的間隔之平均值。 The average interval A in the formation region of the first parallel line pattern 103 and the average interval B outside the formation region of the first parallel line pattern 103 with respect to the interval between the line segments 151 and 152 constituting the second parallel line pattern 105, The average of the intervals of the measurements made at the plurality of locations can be set separately.

為了測定平均間隔A所設定的複數場所(n個場所)之測定場所，較理想，係在第1平行線圖案103之形成區域內，沿著第2方向而以等間隔來作配置。又，為了測定平均間隔B所設定的複數場所(m個場所)之測定場所，較理想，係在第1平行線圖案103之形成區域外，沿著第2方向而以等間隔來作配置。 In order to measure the measurement sites of the plurality of places (n places) set by the average interval A, it is preferable to arrange them at equal intervals along the second direction in the formation region of the first parallel line pattern 103. Further, in order to measure the measurement sites of the plurality of places (m places) set by the average interval B, it is preferable to arrange them at equal intervals along the second direction outside the formation region of the first parallel line pattern 103.

平均間隔A以及平均間隔B，較理想，係如同下述一般地來測定。 The average interval A and the average interval B are preferable, and are generally measured as follows.

圖19，係為對於平均間隔A以及平均間隔B之測定方法的其中一例作說明之圖。 Fig. 19 is a view showing an example of a method of measuring the average interval A and the average interval B.

首先，平均間隔A，係如同圖19中所示一般，針對構成第2平行線圖案105之線段151、152間之 間隔，而作為在沿著構成第1平行線圖案之線段131、132的2個場所A1、A2和較線段131、132而更內側處之5個場所A3~A7的合計7個場所A1~A7處所測定出的間隔之平均，來求取之。此時，此些之合計7個場所的測定場所A1~A7，係沿著第2平行線圖案的形成方向(第2方向)來以等間隔作配置。 First, the average interval A is as shown in FIG. 19 for the line segments 151, 152 constituting the second parallel line pattern 105. 7 places A1 to A7 in total of 5 places A3 to A7 at the inner side of the two places A1 and A2 and the line segments 131 and 132 which are along the line segments 131 and 132 which constitute the first parallel line pattern. The average of the intervals measured by the premises is obtained. At this time, the measurement sites A1 to A7 of the seven locations in total are arranged at equal intervals along the direction in which the second parallel line patterns are formed (the second direction).

另一方面，平均間隔B，係如同圖19中所示一般，針對構成第2平行線圖案105之線段151、152間之間隔，而作為在與關連於上述之平均間隔A之合計7個場所A1~A7相鄰接的合計5個場所之測定場所B1~B5處所測定出的間隔之平均，來求取之。此時，此些之合計5個場所的測定場所B1~B5，係能夠沿著第2平行線圖案的形成方向(第2方向)來以與關連於上述之平均間隔A之合計7個場所的測定場所A1~A7相同之等間隔來作配置。關連於平均間隔A之測定的合計7個場所的測定場所A1~A7、和關連於平均間隔B之測定的合計5個場所的測定場所B1~B5，係能夠沿著第2方向來相互以等間隔來作配置。 On the other hand, the average interval B is as shown in Fig. 19, and is the interval between the line segments 151, 152 constituting the second parallel line pattern 105, and is 7 places in total in relation to the average interval A described above. The average of the intervals measured at the measurement sites B1 to B5 of the total of five sites adjacent to each other from A1 to A7 is obtained. In this case, the measurement sites B1 to B5 of the total of the five places can be in a total of seven places in the direction in which the second parallel line pattern is formed (the second direction) and the average interval A is the same. The measurement sites A1 to A7 are arranged at equal intervals. The measurement sites A1 to A7 of the total of seven locations that are connected to the measurement of the average interval A, and the measurement sites B1 to B5 of the total of five sites that are connected to the measurement of the average interval B are capable of being mutually aligned along the second direction. Interval for configuration.

在圖示之例中，係針對將平均間隔B之測定場所B1~B5相對於平均間隔A之測定場所A1~A7來在圖中而鄰接於下側地作設定的例子作了展示，但是，係亦可在圖中而鄰接於上側地作設定。此時，較理想，係以使平均間隔A和平均間隔B之差會變得更大的方式，來在上側(其中一側)、下側(另外一側)之其中一者處而設 定平均間隔B之測定場所B1~B5。 In the example shown in the figure, the measurement sites B1 to B5 of the average interval B are displayed adjacent to the lower side in the drawing with respect to the measurement sites A1 to A7 of the average interval A. It can also be set adjacent to the upper side in the figure. In this case, it is preferable to set one of the upper side (the one side) and the lower side (the other side) so that the difference between the average interval A and the average interval B becomes larger. The measurement sites B1 to B5 of the average interval B are determined.

在圖19之例中，作為用以測定平均間隔A之測定場所，係針對包含有沿著構成第1平行線圖案之線段131、132的2個場所A1、A2之情況來作了說明，但是，係亦可構成為包含有沿著線段131、132之其中一方的1個場所。又，係亦可構成為並未包含有沿著線段131、132之場所。 In the example of FIG. 19, the measurement site for measuring the average interval A is described with respect to the two places A1 and A2 including the line segments 131 and 132 constituting the first parallel line pattern, but The system may be configured to include one location along one of the line segments 131 and 132. Further, it may be configured not to include a place along the line segments 131 and 132.

在圖19之例中，作為用以測定平均間隔A之測定場所，係針對包含有較構成第1平行線圖案之線段131、132而更內側的5個場所A3~A7之情況來作了說明，但是，係並非絕對需要為5個場所，較理想，係為2以上之複數個場所。 In the example of FIG. 19, the measurement site for measuring the average interval A is described with respect to the five places A3 to A7 including the line segments 131 and 132 constituting the first parallel line pattern. However, it is not absolutely necessary to have five places, and it is preferable that it is a plurality of places of two or more.

在圖19之例中，作為用以測定平均間隔B之測定場所，係針對包含有較構成第1平行線圖案之線段131、132而更外側的5個場所B1~B5之情況來作了說明，但是，係並非絕對需要為5個場所，較理想，係為2以上之複數個場所。 In the example of FIG. 19, the measurement site for measuring the average interval B is described with respect to the five places B1 to B5 including the line segments 131 and 132 constituting the first parallel line pattern. However, it is not absolutely necessary to have five places, and it is preferable that it is a plurality of places of two or more.

構成為了求取出平均間隔A以及平均間隔B而在各測定場所處被作了測定的第2平行線圖案105之線段151、152間之間隔，係可如同下述一般而定義之。 The interval between the line segments 151 and 152 of the second parallel line pattern 105 measured at each measurement site in order to extract the average interval A and the average interval B can be defined as follows.

圖20，係為對於被形成在基材上之平行線圖案的其中一例作展示之部分擴大平面圖。圖21，係為對於圖20中之(a)-(a)線剖面作說明的說明圖，並對於將在圖案中所包含的1組2根的細線而於相對於線段方向 而相正交的方向上作了切斷的剖面(縱剖面)作說明。 Fig. 20 is a partially enlarged plan view showing an example of a parallel line pattern formed on a substrate. Fig. 21 is an explanatory view for explaining a cross section taken along line (a)-(a) of Fig. 20, and for a set of two thin lines to be included in the pattern with respect to the direction of the line segment. The cut cross section (longitudinal section) is illustrated in the direction orthogonal to each other.

構成第2平行線圖案105之線段151、152間之間隔I，係如同圖21中所示一般，可定義為線段151、152之各最大突出部間的距離。故而，藉由在上述之各測定場所處而測定間隔I，係能夠分別求取出平均間隔A以及平均間隔B。 The interval I between the line segments 151, 152 constituting the second parallel line pattern 105, as shown in Fig. 21, can be defined as the distance between the largest projections of the line segments 151, 152. Therefore, by measuring the interval I at each of the above-described measurement sites, it is possible to obtain the average interval A and the average interval B, respectively.

為了滿足上述之式(1)所進行的調整，也可以說是對於會對平均間隔A和平均間隔B之比例B/A造成影響的因子之1個或複數個進行調整者。此種因子，係並未特別作限定，而可適宜作選擇。 In order to satisfy the adjustment performed by the above formula (1), it can be said that one or a plurality of factors affecting the ratio B/A of the average interval A and the average interval B are adjusted. Such a factor is not particularly limited and may be suitably selected.

作為用以滿足上述之式(1)的調整之理想形態，係可例示有下述之形態。 As an ideal form for satisfying the adjustment of the above formula (1), the following aspects are exemplified.

在第1形態中，作為用以滿足上述式(1)之調整，係將第1平行線圖案103之形成區域內的表面能和第1平行線圖案103之形成區域外的表面能之間之差，設為5mN/m以下。 In the first embodiment, the adjustment between the surface energy in the formation region of the first parallel line pattern 103 and the surface energy outside the formation region of the first parallel line pattern 103 is satisfied as the adjustment to satisfy the above formula (1). The difference is set to 5 mN/m or less.

於此，第1平行線圖案103之形成區域內的表面能，可以視為在構成第1平行線圖案103之線段131、132間的中心區域處所測定之表面能。或者是，作為替代方法，第1平行線圖案103之形成區域內的表面能，亦可視為另外準備與基材1相同之基材，並在該基材上，滴下20μL之與第1線狀液體102相同的液體，並且以與第1線狀液體102之乾燥時相同的條件來使其乾燥，之後，在乾燥後的膜之中心區域處所測定之表面能。 Here, the surface energy in the region where the first parallel line pattern 103 is formed can be regarded as the surface energy measured at the central region between the line segments 131 and 132 constituting the first parallel line pattern 103. Alternatively, as an alternative method, the surface energy in the formation region of the first parallel line pattern 103 may be regarded as a substrate prepared separately from the substrate 1, and 20 μL of the first line may be dropped on the substrate. The liquid 102 is the same liquid, and is dried under the same conditions as when the first linear liquid 102 is dried, and then the surface energy measured at the central region of the dried film.

另一方面，第1平行線圖案103之形成區域外的表面能，可以視為在並未被賦予有用以形成第1平行線圖案103之第1線狀液體102的區域處之基材1之表面能。 On the other hand, the surface energy outside the formation region of the first parallel line pattern 103 can be regarded as the substrate 1 at a region where the first linear liquid 102 for forming the first parallel line pattern 103 is not provided. Surface energy.

表面能，係可根據Young-Fowkes式來算出。 The surface energy can be calculated according to the Young-Fowkes formula.

藉由將該表面能之差設定為5mN/m以下，係能夠使在第1平行線圖案103之形成區域的內外之相對於第2線狀液體104的浸濕性之變化減少，而能夠適當地滿足上述之式(1)。 By setting the difference in the surface energy to 5 mN/m or less, it is possible to reduce the change in the wettability with respect to the second linear liquid 104 in the inner and outer regions of the region in which the first parallel line pattern 103 is formed. The above formula (1) is satisfied.

當第1平行線圖案103之形成區域內的表面能為較形成區域外而更大的情況時，若是表面能之差超過5mN/m，則起因於第2線狀液體104的浸濕擴散，在第2平行線圖案105處，會成為線段151、152之間的膨脹之原因。 When the surface energy in the formation region of the first parallel line pattern 103 is larger than the formation region, if the difference in surface energy exceeds 5 mN/m, the wet diffusion of the second linear liquid 104 is caused. At the second parallel line pattern 105, it causes the expansion between the line segments 151, 152.

另一方面，當第1平行線圖案103之形成區域內的表面能為較形成區域外而更小的情況時，若是表面能之差超過5mN/m，則在第2平行線圖案105處，會成為線段151、152之間的縮窄之原因。 On the other hand, when the surface energy in the formation region of the first parallel line pattern 103 is smaller than the formation region, if the difference in surface energy exceeds 5 mN/m, at the second parallel line pattern 105, It will become the cause of the narrowing between the line segments 151, 152.

對於第1平行線圖案103之形成區域的內外之表面能差作調整的手段，係並未特別作限定，但是，例如係以對於包含有第1平行線圖案103之形成區域外的區域進行表面處理之方法、對於第1線狀液體102的液體組成作變更之方法等為理想。 The means for adjusting the surface energy difference between the inside and the outside of the formation region of the first parallel line pattern 103 is not particularly limited, but is, for example, a surface for a region other than the formation region including the first parallel line pattern 103. The method of the treatment, the method of changing the liquid composition of the first linear liquid 102, and the like are preferable.

作為對於包含有第1平行線圖案103之形成 區域外的區域進行表面處理之方法，係可列舉出在形成第1平行線圖案103之前而對於基材1預先施加使表面能作變更的表面處理之方法。表面處理，係可僅對於會成為第1平行線圖案103之形成區域外的區域而進行，亦可對於包含有形成區域外和形成區域內之區域來進行。若是對於基材1之全面進行表面處理，則亦為理想。 As for forming the first parallel line pattern 103 A method of performing surface treatment on a region outside the region includes a method of preliminarily applying a surface treatment to the substrate 1 to change the surface energy before forming the first parallel line pattern 103. The surface treatment may be performed only for a region outside the formation region of the first parallel line pattern 103, or may be performed for a region including the formation region and the formation region. It is also desirable if the surface of the substrate 1 is completely surface treated.

當對於第1線狀液體102之液體組成作變更的情況時，係可藉由調配成分(導電材料、添加劑以及溶劑等)之選擇或各成分之調配量的調整等來進行。 When the liquid composition of the first linear liquid 102 is changed, it can be carried out by selecting a component (conductive material, an additive, a solvent, etc.), adjusting the amount of each component, or the like.

在第2形態中，作為用以滿足上述式(1)之調整，係將塗布第1線狀液體102中所包含的導電材料並使其乾燥之平塗面的表面能和第1平行線圖案103之形成區域外的表面能之間之差，設為5mN/m以下。 In the second aspect, the surface energy of the flat coating surface and the first parallel line pattern in which the conductive material contained in the first linear liquid 102 is applied and dried is used to satisfy the adjustment of the above formula (1). The difference between the surface energies outside the formation region of 103 is set to 5 mN/m or less.

所謂「平塗面」，係指塗布在第1線狀液體102中所包含之導電材料並使其乾燥後的平塗膜之表面，並且為以使該基材自身之表面能以及接觸角不會對於該平塗膜之表面處的表面能以及接觸角造成影響的方式來將該基材作了被覆的平塗膜之表面。導電材料之塗布，例如係可藉由塗布包含有該導電材料之塗布液來進行之。作為在形成平塗面時之塗布液，係亦可使用與第1線狀液體102相同組成的液體。 The term "flat-coated surface" refers to the surface of the flat coating film which is applied to the conductive material contained in the first linear liquid 102 and dried, so that the surface energy and the contact angle of the substrate itself are not The surface of the coated flat coating film is coated in such a manner that the surface energy at the surface of the flat coating film and the contact angle are affected. The coating of the conductive material can be carried out, for example, by coating a coating liquid containing the conductive material. As the coating liquid at the time of forming the flat coating surface, a liquid having the same composition as that of the first linear liquid 102 can be used.

在第1平行線圖案103之形成區域內的線段131、132之間的區域處，係會有起因於咖啡漬(Coffee Stain)現象而導致殘留有些許的並未被運送至線段131、 132的位置處之第1線狀液體102中的某些之成分的情形。此種殘留成分，係會有成為造成構成第2平行線圖案105之線段151、152之間的間隔成為不均一的原因之情況。 At a region between the line segments 131, 132 in the region where the first parallel line pattern 103 is formed, there is a possibility that the residual portion is not transported to the line segment 131 due to the Coffee Stain phenomenon. The condition of some of the components of the first linear liquid 102 at the position of 132. Such a residual component may cause unevenness in the interval between the line segments 151 and 152 constituting the second parallel line pattern 105.

此時，塗布第1線狀液體102中所包含的導電材料並使其乾燥後之平塗面的表面能，係能夠成為用以實現為了滿足上述式(1)之更為確實的調整之指標。亦即是，就算是在線段131、132間之區域處存在有多量之殘留成分，其也難以發生超越由平塗面所致之影響而對於線段151、152間之間隔造成影響的情形。故而，藉由基於平塗面之表面能和第1平行線圖案103之形成區域外的表面能之間之差來進行調整，係能夠使確實性更進一步提昇。 In this case, the surface energy of the flat surface to be coated after the conductive material contained in the first linear liquid 102 is dried and dried can be used as an index for achieving more accurate adjustment of the above formula (1). . That is, even if there is a large amount of residual components in the area between the line segments 131 and 132, it is difficult to cause a situation that affects the interval between the line segments 151 and 152 beyond the influence of the flat coated surface. Therefore, by adjusting the difference between the surface energy of the flat coated surface and the surface energy outside the formation region of the first parallel line pattern 103, the reliability can be further improved.

當平塗面之表面能為較第1平行線圖案103之形成區域外而更大的情況時，若是表面能之差超過5mN/m，則起因於第2線狀液體104的浸濕擴散，在第2平行線圖案105處，會成為線段151、152之間的膨脹之原因。 When the surface energy of the flat coating surface is larger than the formation region of the first parallel line pattern 103, if the difference in surface energy exceeds 5 mN/m, the wet diffusion of the second linear liquid 104 is caused. At the second parallel line pattern 105, it causes the expansion between the line segments 151, 152.

另一方面，當平塗面之表面能為較第1平行線圖案103之形成區域外而更小的情況時，若是表面能之差超過5mN/m，則在第2平行線圖案105處，會成為線段151、152之間的縮窄之原因。 On the other hand, when the surface energy of the flat coating surface is smaller than the formation region of the first parallel line pattern 103, if the difference in surface energy exceeds 5 mN/m, at the second parallel line pattern 105, It will become the cause of the narrowing between the line segments 151, 152.

作為對於平塗面之表面能和第1平行線圖案103之形成區域外的表面能差進行調整之手段，係並未特 別作限定，而可合適使用關連於第1形態所作了說明的手段。 As a means for adjusting the surface energy of the flat coated surface and the surface energy difference outside the formation region of the first parallel line pattern 103, The means described in connection with the first aspect can be suitably used.

在第3形態中，作為用以滿足上述式(1)之調整，係將在第1平行線圖案103之形成區域內的第2線狀液體104之接觸角和在第1平行線圖案103之形成區域外的第2線狀液體104之接觸角之間之差，設為10°以下。 In the third embodiment, the contact angle of the second linear liquid 104 in the region where the first parallel line pattern 103 is formed and the first parallel line pattern 103 are adjusted to satisfy the above formula (1). The difference between the contact angles of the second linear liquids 104 outside the formation region is set to 10 or less.

於此，第1平行線圖案103之形成區域內的接觸角，可以視為在構成第1平行線圖案103之線段131、132間的中心區域處所測定之接觸角。或者是，作為替代方法，第1平行線圖案103之形成區域內的接觸角，亦可視為另外準備與基材1相同之基材，並在該基材上，滴下20μL之與第1線狀液體102相同的液體，並且以與第1線狀液體102之乾燥時相同的條件來使其乾燥，之後，在乾燥後的膜之中心區域處所測定之接觸角。 Here, the contact angle in the formation region of the first parallel line pattern 103 can be regarded as the contact angle measured at the central region between the line segments 131 and 132 constituting the first parallel line pattern 103. Alternatively, as an alternative, the contact angle in the formation region of the first parallel line pattern 103 may be considered to be the same as that of the substrate 1, and 20 μL of the first line may be dropped on the substrate. The liquid 102 is the same liquid, and is dried under the same conditions as when the first linear liquid 102 is dried, and then the contact angle measured at the central region of the dried film.

另一方面，第1平行線圖案103之形成區域外的接觸角，可以視為在並未被賦予有用以形成第1平行線圖案103之第1線狀液體102的區域處之基材1上的接觸角。 On the other hand, the contact angle outside the formation region of the first parallel line pattern 103 can be regarded as the substrate 1 at a region where the first linear liquid 102 for forming the first parallel line pattern 103 is not provided. Contact angle.

接觸角之測定，係可使用協和界面化學公司製之接觸角測定裝置DM-501來進行之。在第3形態中，接觸角，係設為在將與第2線狀液體104相同組成的液體滴下後而經過了5秒後之值。 The measurement of the contact angle can be carried out using a contact angle measuring device DM-501 manufactured by Kyowa Interface Chemical Co., Ltd. In the third embodiment, the contact angle is a value obtained after the liquid having the same composition as that of the second linear liquid 104 is dropped for 5 seconds.

藉由將該接觸角之差設為10°以下，係能夠使 在第1平行線圖案103之形成區域的內外之相對於第2線狀液體104的浸濕性之變化減少，而能夠在第2平行線圖案105處，使線段151、152之間的間隔滿足上述之式(1)。 By setting the difference between the contact angles to 10° or less, it is possible to make The change in the wettability with respect to the second linear liquid 104 in the inner and outer regions of the formation region of the first parallel line pattern 103 is reduced, and the interval between the line segments 151 and 152 can be satisfied at the second parallel line pattern 105. The above formula (1).

當第1平行線圖案之形成區域內的接觸角為較形成區域外之接觸角而更大的情況時，若是接觸角之差超過10°，則起因於第2線狀液體104的浸濕擴散，在第1平行線圖案103之形成區域內，第2平行線圖案105之線段151、152之間的間隔會變得較形成區域外而更大，並成為作了膨脹的形狀。 When the contact angle in the formation region of the first parallel line pattern is larger than the contact angle outside the formation region, if the difference in contact angle exceeds 10°, the wet diffusion of the second linear liquid 104 is caused. In the formation region of the first parallel line pattern 103, the interval between the line segments 151, 152 of the second parallel line pattern 105 becomes larger than the outside of the formation region, and becomes an expanded shape.

另一方面，當第1平行線圖案之形成區域內的接觸角為較形成區域外之接觸角而更小的情況時，若是接觸角之差超過10°，則在第1平行線圖案103之形成區域內，第2平行線圖案105之線段151、152之間的間隔會變得較形成區域外而更小，並成為作了縮窄的形狀。 On the other hand, when the contact angle in the formation region of the first parallel line pattern is smaller than the contact angle outside the formation region, if the difference in contact angle exceeds 10°, the first parallel line pattern 103 is In the formation region, the interval between the line segments 151, 152 of the second parallel line pattern 105 becomes smaller than the outside of the formation region, and becomes a narrowed shape.

對於接觸角之差進行調整之手段，係並未特別作限定，而可合適使用在第1形態中作為對於表面能進行調整之手段而作了說明的手段。進而，作為對於接觸角之差進行調整之手段，係亦可變更第2線狀液體104之液體組成。當對於第2線狀液體104之液體組成作變更的情況時，係可藉由調配成分(導電材料、添加劑以及溶劑等)之選擇或各成分之調配量的調整等來進行。使第2線狀液體104之液體與第1線狀液體102之液體互為相異一事，亦為理想。 The means for adjusting the difference in the contact angle is not particularly limited, and the means for adjusting the surface energy in the first embodiment can be suitably used. Further, as a means for adjusting the difference in contact angle, the liquid composition of the second linear liquid 104 can be changed. When the liquid composition of the second linear liquid 104 is changed, it can be carried out by selecting a component (a conductive material, an additive, a solvent, etc.), adjusting the amount of each component, or the like. It is also preferable that the liquid of the second linear liquid 104 and the liquid of the first linear liquid 102 are different from each other.

在第4形態中，作為用以滿足上述式(1)之調整，係將在塗布被包含於第1線狀液體102中之導電材料並使其乾燥後的平塗面處之第2線狀液體104之接觸角和在第1平行線圖案103之形成區域外的第2線狀液體104之接觸角之間之差，設為10°以下。於此，關於「平塗面」，係援用在第2形態中所進行之說明。 In the fourth embodiment, the second linear form at the flat coating surface after the conductive material contained in the first linear liquid 102 is applied and dried is used to satisfy the adjustment of the above formula (1). The difference between the contact angle of the liquid 104 and the contact angle of the second linear liquid 104 outside the formation region of the first parallel line pattern 103 is 10 or less. Here, the description of the "flat-coated surface" is made in the second embodiment.

藉由將該接觸角之差設為10°以下，係能夠使在第1平行線圖案103之形成區域的內外之相對於第2線狀液體104的浸濕性之變化減少，而能夠在第2平行線圖案105處，使線段151、152之間的間隔滿足上述之式(1)。 By setting the difference in the contact angle to 10° or less, the change in the wettability with respect to the second linear liquid 104 in the region in which the first parallel line pattern 103 is formed can be reduced. At the parallel line pattern 105, the interval between the line segments 151, 152 is made to satisfy the above formula (1).

與在第2形態中針對表面能而於上所作了說明一般，藉由以平塗面處之接觸角作為指標來進行調整，係能夠使確實性更進一步提昇。 In the second embodiment, the surface energy is described above. Generally, the adjustment is performed by using the contact angle at the flat surface as an index, and the reliability can be further improved.

當在平塗面處之接觸角為較第1平行線圖案103之形成區域外之接觸角而更大的情況時，若是接觸角之差超過10°，則起因於第2線狀液體104的浸濕擴散，在第1平行線圖案103之形成區域內，第2平行線圖案105之線段151、152之間的間隔會變得較形成區域外而更大，並成為作了膨脹的形狀。 When the contact angle at the flat coating surface is larger than the contact angle outside the formation region of the first parallel line pattern 103, if the difference in contact angle exceeds 10°, the second linear liquid 104 is caused. In the wet diffusion, in the region where the first parallel line pattern 103 is formed, the interval between the line segments 151 and 152 of the second parallel line pattern 105 becomes larger than the outside of the formation region, and becomes an expanded shape.

另一方面，當在平塗面處之接觸角為較第1平行線圖案之形成區域外之接觸角而更小的情況時，若是接觸角之差超過10°，則在第1平行線圖案103之形成區域內，第2平行線圖案105之線段151、152之間的間隔 會變得較形成區域外而更小，並成為作了縮窄的形狀。 On the other hand, when the contact angle at the flat coated surface is smaller than the contact angle outside the formation region of the first parallel line pattern, if the difference in contact angle exceeds 10°, the first parallel line pattern is The interval between the line segments 151, 152 of the second parallel line pattern 105 in the formation region of 103 It will become smaller than the outside of the formation area and become a narrowed shape.

作為對於在平塗面處之接觸角和第1平行線圖案103之形成區域外處的接觸角之差進行調整之手段，係並未特別作限定，而可合適使用關連於第3形態所作了說明的手段。 The means for adjusting the difference between the contact angle at the flat coating surface and the contact angle outside the formation region of the first parallel line pattern 103 is not particularly limited, and may be appropriately used in connection with the third form. The means of explanation.

在第5形態中，作為用以滿足上述式(1)之調整，係將在第1平行線圖案103之形成區域外的第2線狀液體104中之溶劑中的沸點為最高之溶劑的接觸角，設為6°以下。 In the fifth embodiment, the contact of the solvent having the highest boiling point among the solvents in the second linear liquid 104 outside the region where the first parallel line pattern 103 is formed is used as the adjustment for satisfying the above formula (1). The angle is set to 6° or less.

於此，第1平行線圖案103之形成區域外的接觸角，可以視為在並未被賦予有用以形成第1平行線圖案103之第1線狀液體102的區域處之基材1上的接觸角。 Here, the contact angle outside the formation region of the first parallel line pattern 103 can be regarded as the substrate 1 at the region where the first linear liquid 102 for forming the first parallel line pattern 103 is not provided. Contact angle.

接觸角之測定，係可使用協和界面化學公司製之接觸角測定裝置DM-501來進行之。在第5形態中，接觸角，係設為在將第2線狀液體104中之溶劑中的沸點為最高之溶劑滴下後而經過了5秒後之值。 The measurement of the contact angle can be carried out using a contact angle measuring device DM-501 manufactured by Kyowa Interface Chemical Co., Ltd. In the fifth embodiment, the contact angle is a value obtained after the solvent having the highest boiling point among the solvents in the second linear liquid 104 is dropped, and the elapsed time is 5 seconds.

藉由將該接觸角設為6°以下，係能夠使在第1平行線圖案103之形成區域的內外之相對於第2線狀液體104的浸濕性之變化減少，而能夠在第2平行線圖案105處，使線段151、152之間的間隔滿足上述之式(1)。 By setting the contact angle to 6° or less, the change in the wettability with respect to the second linear liquid 104 in the region in which the first parallel line pattern 103 is formed can be reduced, and the second parallel can be made. At the line pattern 105, the interval between the line segments 151, 152 is made to satisfy the above formula (1).

對於接觸角進行調整之手段，係並未特別作限定，而可合適使用在第1形態中作為對於表面能進行調整之手段而作了說明的手段。 The means for adjusting the contact angle is not particularly limited, and the means for adjusting the surface energy in the first embodiment can be suitably used.

在第6形態中，作為用以滿足上述式(1)之調整，係將在第1平行線圖案103之形成區域內的第2線狀液體104之每單位長度的液體賦予量，和在第1平行線圖案103之形成區域外的第2線狀液體104之每單位長度的液體賦予量，設為互為相異。 In the sixth embodiment, the amount of liquid per unit length of the second linear liquid 104 in the region where the first parallel line pattern 103 is formed is adjusted as the adjustment to satisfy the above formula (1), and The liquid application amount per unit length of the second linear liquid 104 outside the formation region of the parallel line pattern 103 is different from each other.

例如，當相較於第1平行線圖案103之形成區域外而在形成區域內之第2線狀液體104之浸濕性為更佳的情況時，係將在形成區域內的第2線狀液體104之每單位長度的液體賦予量，相對於形成區域外而相對性地減少。 For example, when the wettability of the second linear liquid 104 in the formation region is better than the formation region of the first parallel line pattern 103, the second linear shape in the formation region is formed. The liquid imparting amount per unit length of the liquid 104 is relatively reduced with respect to the outside of the formation region.

又，例如，當相較於第1平行線圖案103之形成區域內而在形成區域外之第2線狀液體104之浸濕性為更佳的情況時，係將在形成區域內的第2線狀液體104之每單位長度的液體賦予量，相對於形成區域外而相對性地增多。 Further, for example, when the wettability of the second linear liquid 104 outside the formation region is better than that in the formation region of the first parallel line pattern 103, it is the second in the formation region. The amount of liquid per unit length of the linear liquid 104 is relatively increased with respect to the outside of the formation region.

如此這般，係能夠防止在第1平行線圖案103之形成區域內而第2平行線圖案105之線段151、152間的間隔成為較形成區域外而更為膨脹或縮窄的情形。 In this manner, it is possible to prevent the interval between the line segments 151 and 152 of the second parallel line pattern 105 from being expanded or narrowed outside the formation region in the formation region of the first parallel line pattern 103.

在第1平行線圖案103之形成區域內外處的液體賦予量之差，係能夠以會滿足式(1)的方式來適宜作調整。例如，當在第2線狀液體104之形成中使用噴墨法的情況時，係可藉由使第2線狀液體之每單位長度中所吐出的液滴數量或者是每一滴的液滴容量在第1平行線圖案103之形成區域內外而互為相異，來設定液體賦予量之 差。 The difference in the amount of liquid to be applied to the inside and outside of the region in which the first parallel line pattern 103 is formed can be appropriately adjusted so as to satisfy the formula (1). For example, when the inkjet method is used in the formation of the second linear liquid 104, the number of droplets discharged per unit length of the second linear liquid or the droplet capacity per droplet can be used. The liquid application amount is set to be different from each other in the region where the first parallel line pattern 103 is formed. difference.

在第7形態中，作為用以滿足上述式(1)之調整，係在形成了第1平行線圖案103之後，於賦予第2線狀液體104之前，將包含第1平行線圖案103之形成區域內的區域作洗淨。 In the seventh embodiment, the adjustment of the above formula (1) is performed, and after the first parallel line pattern 103 is formed, the formation of the first parallel line pattern 103 is included before the second linear liquid 104 is applied. The area within the area is washed.

如同上述一般，在第1平行線圖案103之形成區域內的線段131、132之間的區域處，係會有起因於咖啡漬(Coffee Stain)現象而導致殘留有些許的並未被運送至線段131、132的位置處之第1線狀液體102中的某些之成分的情形。此種殘留成分，係會有成為造成構成第2平行線圖案105之線段151、152之間的間隔成為不均一的原因之情況。 As described above, in the region between the line segments 131 and 132 in the formation region of the first parallel line pattern 103, there is a slight residual of the coffee stain (Coffee Stain) which is not transported to the line segment. The case of some of the components of the first linear liquid 102 at the position of 131, 132. Such a residual component may cause unevenness in the interval between the line segments 151 and 152 constituting the second parallel line pattern 105.

所謂洗淨，係亦可代表將此種殘留成分除去一事。此時，依據洗淨條件、例如依據洗淨之種類或強度之設定等，會對於使殘留成分被作何種程度的除去一事產生影響。利用此關係，係能夠將在第1平行線圖案103之形成區域的內外處之第2線狀液體104的浸濕性之差異消除。在某一觀點上，洗淨，係可構成為至少以能夠達成使構成第2平行線圖案105之線段151、152之間的間隔會滿足上述之式(1)一事的方式來將殘留成分除去。在此種意義上，洗淨，係可定義為用以滿足上述之式(1)的調整之其中一例。 The so-called washing can also represent the removal of such residual components. At this time, depending on the washing conditions, for example, depending on the type of the washing or the setting of the strength, it is affected by how much the residual component is removed. With this relationship, the difference in wettability of the second linear liquid 104 at the inner and outer portions of the formation region of the first parallel line pattern 103 can be eliminated. In a certain aspect, the cleaning may be performed so that the residual component can be removed at least so that the interval between the line segments 151 and 152 constituting the second parallel line pattern 105 satisfies the above formula (1). . In this sense, washing can be defined as an example of the adjustment to satisfy the above formula (1).

洗淨，係可僅對於第1平行線圖案103之形成區域內而進行，亦可對於包含有第1平行線圖案之形成 區域內和形成區域外之區域來進行。若是對於基材1之全面進行洗淨，則亦為理想。 The cleaning may be performed only in the formation region of the first parallel line pattern 103, or may include the formation of the first parallel line pattern. It is carried out in the area and in the area outside the area. It is also preferable if the substrate 1 is completely washed.

當僅對於第1平行線圖案之形成區域內而進行洗淨的情況時，例如，係成為能夠在將形成區域外作了遮蔽的狀態下來進行電磁波等之照射，或者是利用噴墨法來將洗淨溶劑選擇性地賦予至形成區域內。 When the cleaning is performed only in the formation region of the first parallel line pattern, for example, it is possible to irradiate electromagnetic waves or the like in a state where the formation region is shielded, or to use an inkjet method. The cleaning solvent is selectively imparted into the formation region.

洗淨之方法，係並未特別作限定，例如係可使用通常在工業製品中所被使用的洗淨方法。例如，較理想，係進行從由加熱所致之洗淨、由電磁波所致之洗淨、由溶劑所致之洗淨、由氣體所致之洗淨以及由電漿所致之洗淨中所選擇的1種或2種以上之組合的洗淨。 The method of washing is not particularly limited, and for example, a washing method which is usually used in industrial products can be used. For example, it is preferable to perform cleaning by heating, washing by electromagnetic waves, washing by a solvent, washing by a gas, and washing by plasma. One or a combination of two or more selected ones are washed.

作為由加熱所致之洗淨方法，係存在有由紅外線加熱器、烤箱、熱板等所致的持續性之加熱方法、或者是由氙氣閃光燈等所致之瞬間性的加熱方法。加熱條件(溫度、時間等)，係在會使構成平行線圖案105之線段151、152之間的間隔滿足上述之式(1)之範圍內而適宜作設定。當基材1為薄膜等的情況時，係以設定在不會使基材1變形的條件之範圍內為理想。在此觀點下，係以瞬間性進行加熱、特別是以由對於如同薄膜一般之基材的損傷為少之氙氣閃光燈所致的方法為理想。 As a washing method by heating, there is a continuous heating method by an infrared heater, an oven, a hot plate, or the like, or an instantaneous heating method by a xenon flash lamp or the like. The heating conditions (temperature, time, etc.) are suitably set so that the interval between the line segments 151 and 152 constituting the parallel line pattern 105 satisfies the above formula (1). When the base material 1 is a film or the like, it is preferably set within a range in which the substrate 1 is not deformed. In this point of view, it is preferred to carry out the heating by an instant, in particular, by a xenon flash lamp having less damage to a substrate such as a film.

作為由電磁波所致者，係可使用照射電子線、伽瑪線、紫外線等之方法。電磁波之照射條件，係在會使構成平行線圖案105之線段151、152之間的間隔滿足上述之式(1)之範圍內而適宜作設定。 As the electromagnetic wave, a method of irradiating an electron beam, a gamma line, an ultraviolet ray or the like can be used. The irradiation condition of the electromagnetic wave is suitably set so that the interval between the line segments 151 and 152 constituting the parallel line pattern 105 satisfies the above formula (1).

在由溶劑所致之洗淨中所使用的溶劑，只要是能夠滿足上述之式(1)的溶劑，則並不特別作限定，但是，較理想，係選擇對於堆積導電材料所形成的平行線圖案所造成之影響為少者。係可配合於導電材料之種類來選擇適於進行洗淨之溶劑。例如，當水分散系之銀奈米粒子的情況時，乙醇系之溶劑等係為合適。 The solvent to be used in the cleaning by the solvent is not particularly limited as long as it satisfies the above formula (1). However, it is preferred to select parallel lines formed for depositing the conductive material. The effect of the pattern is less. The solvent suitable for the cleaning can be selected in accordance with the kind of the conductive material. For example, when the water is dispersed in the form of silver nanoparticles, an ethanol-based solvent or the like is suitable.

由電漿所致之洗淨的條件，係可在會使構成平行線圖案105之線段151、152之間的間隔滿足上述之式(1)之範圍內而適宜作設定。 The cleaning condition by the plasma can be suitably set within a range in which the interval between the line segments 151 and 152 constituting the parallel line pattern 105 satisfies the above formula (1).

以下，再度參考圖20以及圖21，來針對構成導電性圖案之第1層的平行線圖案之尺寸的理想例作說明。於此，主要係針對第2平行線圖案105作說明，但是，針對第1平行線圖案103係亦可同樣的作說明。 Hereinafter, a preferred example of the size of the parallel line pattern constituting the first layer of the conductive pattern will be described with reference to FIGS. 20 and 21 again. Here, the second parallel line pattern 105 is mainly described. However, the first parallel line pattern 103 can also be similarly described.

構成平行線圖案105之線段151、152間之間隔I，係如同上述一般，可定義為線段151、152之各最大突出部間的距離，較理想，係以調整為10μm以上300μm以下之範圍內為理想。 The interval I between the line segments 151 and 152 constituting the parallel line pattern 105 can be defined as the distance between the largest projections of the line segments 151 and 152 as described above, and is preferably adjusted to be in the range of 10 μm or more and 300 μm or less. Ideal.

平行線圖案105之1組2根的細線(線段)151、152，係並非絕對需要身為相互完全獨立之島狀。如同圖示一般，2根的線段151、152，若是作為涵蓋該線段151、152間而藉由以較該線段151、152之高度而更低的高度所形成的薄膜部150而作了連接的連續體來形成，則亦為理想。 One set of two thin lines (line segments) 151 and 152 of the parallel line pattern 105 is not absolutely required to be completely independent of each other. As shown in the figure, the two line segments 151, 152 are connected as a thin film portion 150 formed by covering the line segments 151, 152 with a lower height than the height of the line segments 151, 152. It is also ideal when a continuous body is formed.

平行線圖案105之線段151、152的線寬幅 W1、W2，較理想係各自為10μm以下。若是成為10μm以下，則由於係成為通常無法被視覺辨認出來的程度，因此從使透明性提昇的觀點而言係為更加理想。若是亦對於各線段151、152之安定性作考慮，則各線段151、152的線寬幅W1、W2，較理想係各自為2μm以上10μm以下之範圍內。 Line width of line segments 151, 152 of parallel line pattern 105 W1 and W2 are each preferably 10 μm or less. When it is 10 μm or less, since it is generally not visually recognizable, it is more preferable from the viewpoint of improving transparency. In consideration of the stability of each of the line segments 151 and 152, the line widths W1 and W2 of the respective line segments 151 and 152 are preferably in the range of 2 μm or more and 10 μm or less.

另外，所謂線段151、152之寬幅W1、W2，當將在該線段151、152之間而功能性材料之厚度成為最薄的最薄部分之高度設為Z，並進而將從該Z起之線段151、152的突出高度設為Y1、Y2時，係定義為在Y1、Y2之一半的高度處之線段151、152的寬幅。例如，當平行線圖案105為具備有上述之薄膜部150的情況時，係可將在該薄膜部150處之最薄部分的高度設為Z。另外，當在各線段151、152之間而功能性材料之最薄部分之高度為0時，線段151、152之線寬幅W1、W2，係定義為在從基材1表面起之線段151、152的高度h1、h2之一半的高度處之線段151、152的寬幅。 Further, the widths W1, W2 of the line segments 151, 152 are set to Z when the thickness of the thinnest portion of the functional material between the line segments 151, 152 is the thinnest, and further from the Z When the protruding heights of the line segments 151 and 152 are set to Y1 and Y2, they are defined as the width of the line segments 151 and 152 at the height of one half of Y1 and Y2. For example, when the parallel line pattern 105 is provided with the above-described thin film portion 150, the height of the thinnest portion at the thin film portion 150 can be set to Z. Further, when the height of the thinnest portion of the functional material between the line segments 151, 152 is 0, the line widths W1, W2 of the line segments 151, 152 are defined as line segments 151 from the surface of the substrate 1. The width of the line segments 151, 152 at the height of one half of the height h1, h2 of 152.

構成平行線圖案105之線段151、152的線寬幅W1、W2，由於係能夠成為極細，因此，從確保剖面積並謀求低電阻化的觀點來看，從基材1表面起之線段151、152的高度h1、h2係以設為較高為理想。具體而言，線段151、152之高度h1、h2，較理想係為50nm以上5μm以下之範圍內。 Since the line widths W1 and W2 of the line segments 151 and 152 constituting the parallel line pattern 105 can be extremely thin, the line segment 151 from the surface of the substrate 1 is obtained from the viewpoint of securing the cross-sectional area and reducing the resistance. It is preferable that the heights h1 and h2 of 152 are set to be high. Specifically, the heights h1 and h2 of the line segments 151 and 152 are preferably in the range of 50 nm or more and 5 μm or less.

進而，從使平行線圖案105之安定性提昇的 觀點來看，較理想，h1/W1比、h2/W2比係個別為0.01以上1以下的範圍內。 Further, from the stability of the parallel line pattern 105 is improved In view of the above, the h1/W1 ratio and the h2/W2 ratio are preferably in the range of 0.01 or more and 1 or less.

又，從使平行線圖案105之細線化作更進一步之提昇的觀點來看，在線段151、152間之功能性材料的厚度會成為最薄之最薄部分的高度Z、具體而言，薄膜部150之最薄部分的高度Z，係以成為10nm以下之範圍內為理想。最理想，為了謀求透明性和安定性之兩者的良好之平衡性，係以0<Z≦10nm的範圍而具備有薄膜部150。 Further, from the viewpoint of further thinning the parallel line pattern 105, the thickness of the functional material between the line segments 151, 152 becomes the height Z of the thinnest thinnest portion, specifically, the film. The height Z of the thinnest portion of the portion 150 is preferably in the range of 10 nm or less. It is preferable that the thin film portion 150 is provided in a range of 0 < Z ≦ 10 nm in order to achieve a good balance between transparency and stability.

進而，為了達成平行線圖案105之更進一步的細線化，h1/Z比、h2/Z比係以各別為5以上為理想，又以各別為10以上為更理想，又以各別為20以上為特別理想。 Further, in order to achieve further thinning of the parallel line pattern 105, the h1/Z ratio and the h2/Z ratio are preferably 5 or more, and each of 10 or more is more desirable, and each is 20 or more is particularly desirable.

又，更進而，係以對於線段151和線段152賦予同樣的形狀(同等程度之剖面積)為理想，具體而言，較理想，係將線段151和線段152之高度h1和h2設為實質性為相等之值。與此相同的，針對線段151和線段152之線寬幅W1和W2，亦以設為實質性為相等之值為理想。 Further, it is preferable to apply the same shape (the same sectional area) to the line segment 151 and the line segment 152. Specifically, it is preferable to set the heights h1 and h2 of the line segment 151 and the line segment 152 as substantial. Is equal value. Similarly, the line widths W1 and W2 for the line segment 151 and the line segment 152 are also ideally set to be substantially equal.

線段151、152，係並非絕對需要為平行，只要至少涵蓋線段方向之某一長度L而線段151、152不會相互結合即可。較理想，至少涵蓋線段方向之某一長度L，線段151、152係實質性為相互平行。 The line segments 151, 152 are not absolutely required to be parallel, as long as at least a certain length L of the line segment direction is covered and the line segments 151, 152 are not combined with each other. Preferably, at least a certain length L of the direction of the line segment is covered, and the line segments 151, 152 are substantially parallel to each other.

線段151、152之線段方向的長度L，較理 想，係成為線段151、152之間隔I的5倍以上，更理想，係成為10倍以上。長度L以及間隔I，係可對應於用以形成平行線圖案105之線狀液體104的形成長度以及形成寬幅來設定之。 The length L of the line segment 151, 152 in the direction of the line segment is reasonable. It is preferable that it is five times or more of the interval I of the line segments 151 and 152, and more preferably 10 times or more. The length L and the interval I may be set corresponding to the formation length of the linear liquid 104 for forming the parallel line pattern 105 and the formation of the width.

在線狀液體之形成起點和終點(涵蓋線段方向之某一長度L的起點和終點)處，若是線段151、152係相互連接並作為連續體而被形成，則亦為理想。 It is also preferable that the starting point and the end point of the linear liquid (the starting point and the end point of a certain length L covering the direction of the line segment) are formed by connecting the line segments 151 and 152 to each other and forming them as a continuous body.

又，線段151、152，較理想，其之線寬幅W1、W2係為略相等，並且線寬幅W1、W2係相較於2根線之間的距離(間隔I)而為充分細。 Further, it is preferable that the line segments 151 and 152 have line widths W1 and W2 which are slightly equal, and the line widths W1 and W2 are sufficiently thinner than the distance (interval I) between the two lines.

進而，由1根的線狀液體所產生的構成平行線圖案105之線段151和線段152，較理想，係為同時被形成者。 Further, the line segment 151 and the line segment 152 which constitute the parallel line pattern 105 by one linear liquid are preferably formed at the same time.

平行線圖案105，特別理想，各線段151、152係滿足下述(A)~(D)的所有之條件。 The parallel line pattern 105 is particularly preferable, and each of the line segments 151 and 152 satisfies all of the following conditions (A) to (D).

(A)當將各線段151、152之高度設為h1、h2，並將在該各線段間之最薄部分的高度設為Z時，係成為5≦h1/Z，並且為5≦h2/Z。 (A) When the heights of the respective line segments 151, 152 are h1 and h2, and the height of the thinnest portion between the line segments is Z, it becomes 5≦h1/Z and is 5≦h2/ Z.

(B)當將各線段151、152之寬幅設為W1、W2時，係成為W1≦10μm且W2≦10μm。 (B) When the width of each of the line segments 151 and 152 is W1 and W2, it is W1≦10 μm and W2≦10 μm.

(C)當將各線段151、152間之距離寬幅設為I時，係成為10μm≦I≦300μm。 (C) When the distance between the line segments 151 and 152 is set to 1, the thickness is 10 μm ≦I ≦ 300 μm.

(D)當將各線段151、152之高度設為h1、h2時，係成為50nm<h1<5μm並且50nm<h2<5μm。 (D) When the heights of the respective line segments 151 and 152 are h1 and h2, they are 50 nm < h1 < 5 μm and 50 nm < h2 < 5 μm.

導電性圖案，若是為將以上所說明之由導電性細線所成的圖案和包含有導電材料之平塗圖案作組合所構成者，則亦為理想。包含有導電材料之平塗圖案，較理想，係以與由導電性細線所成之導電性圖案的端部之至少一部分相重疊的方式而形成之。以下，針對此形態，以將由導電性細線所成之網格狀圖案和平塗圖案作組合的情況為例來作詳細說明。 It is also preferable that the conductive pattern is formed by combining a pattern formed of a conductive thin wire and a flat coating pattern containing a conductive material as described above. Preferably, the flat coating pattern containing the conductive material is formed so as to overlap at least a portion of the end portion of the conductive pattern formed by the conductive thin wires. Hereinafter, a case where the mesh pattern and the flat pattern formed of the conductive thin wires are combined will be described in detail as an example.

網格狀圖案，係使由包含有導電材料之2根的相互平行之線段所成之平行線圖案在基材上作複數交叉而形成之。構成該平行線圖案之2根的線段，係在基材上以線狀而賦予包含有導電材料之液體並形成線狀液體，並在使其乾燥時，利用該線狀液體內部之對流，來將前述導電材料堆積於該線狀液體之緣部處，而形成之。 The grid pattern is formed by multiplying parallel line patterns formed by mutually parallel line segments including two conductive materials on a substrate. The two line segments constituting the parallel line pattern are formed by applying a liquid containing a conductive material to a substrate in a linear form to form a linear liquid, and when sterilizing the inside of the linear liquid, the convection inside the linear liquid is used. The conductive material is deposited at the edge of the linear liquid to form it.

平塗圖案，係包含有與在前述網格狀圖案中所包含之導電材料相同或者是具有同一功能的導電材料，並藉由將導電材料賦予至基材上，而以會使前述網格狀之圖案的端部之至少一部分相重疊的方式而形成之。導電材料，係以作為包含有該導電材料之液體來賦予至基材上為理想。藉由使此液體乾燥，係能夠形成平塗圖案。 The flat coating pattern includes a conductive material which is the same as or has the same function as the conductive material contained in the mesh pattern, and is provided on the substrate by the conductive material to cause the mesh shape The at least a portion of the ends of the pattern are formed in such a manner as to overlap. The conductive material is preferably applied to the substrate as a liquid containing the conductive material. By drying this liquid, it is possible to form a flat coating pattern.

於此，在平塗圖案中所包含的導電材料，係可為與在網格狀圖案中所包含之導電材料相同，亦可為相異。 Herein, the conductive material contained in the flat pattern may be the same as or different from the conductive material included in the grid pattern.

本形態之導電性圖案，係能夠發揮將起因於在網格狀圖案之端部處的導電材料之濃度的參差所導致之 問題減輕之效果。藉由使平塗圖案包含有導電材料，係能夠將起因於在網格狀圖案之端部處的導電材料之濃度的參差所導致之問題減輕，而能夠使由導電材料所致之功能的發揮安定化。 The conductive pattern of the present embodiment is capable of exhibiting a variation due to a concentration of a conductive material at an end portion of the mesh pattern. The effect of the problem is alleviated. By including the conductive material in the planing pattern, the problem caused by the variation in the concentration of the conductive material at the end portion of the mesh pattern can be alleviated, and the function by the conductive material can be exerted. Settled.

在本形態之導電性圖案的其中一個形態中，平塗圖案，係被分割為複數之細線，但是，藉由將此些之細線亦以與網格狀圖案端部之至少一部分相重疊的方式來形成，係能夠將起因於在網格狀圖案之端部處的導電材料之濃度的參差所導致之問題減輕，而能夠使由導電材料所致之功能的發揮安定化。 In one aspect of the conductive pattern of the present embodiment, the flat coating pattern is divided into a plurality of thin lines, but by overlapping the thin lines with at least a portion of the ends of the grid pattern. The formation is capable of alleviating the problem caused by the variation in the concentration of the conductive material at the end portion of the mesh pattern, and the function of the function due to the conductive material can be stabilized.

又，本形態之導電性圖案，係發揮能夠形成適於達成省空間化之導出配線的效果。例如，藉由將平塗圖案分割成複數之細線，係能夠將此些之細線的各者，作為被與網格狀圖案作連接的導出配線。如此這般所形成之導出配線，相較於將與構成網格狀圖案之平行線圖案同樣的所形成者作為導出配線來使用的情況，係容易將空間縮窄，而適於達成省空間化。在某一形態中，於將平塗圖案之一部分除去並形成由配線(線)和空間之交互出現所成的「Line and Space」(以下，係有稱作「L/S」的情況)之圖案的情況中，對於將配線之面積或空間之面積縮小一事而言，係為有利。 Further, the conductive pattern of the present embodiment exhibits an effect of being able to form a lead-out wiring suitable for achieving space saving. For example, by dividing the flat pattern into a plurality of thin lines, each of these thin lines can be used as a lead wiring connected to the grid pattern. The lead-out wiring formed in this manner is used as a lead-out wiring as compared with the case where the same pattern as the parallel line pattern constituting the grid-like pattern is used as the lead-out wiring, and is suitable for space saving. . In one form, a part of the flat pattern is removed and a "Line and Space" (hereinafter referred to as "L/S") formed by the interaction of wiring (line) and space is formed. In the case of a pattern, it is advantageous to reduce the area of the wiring or the area of the space.

以下，參考圖面來針對用以實施本發明之形態作說明。 Hereinafter, the form for carrying out the invention will be described with reference to the drawings.

圖22，係為對於從線狀液體而形成平行線圖 案的模樣作概念性說明之立體剖面圖，剖面，係對應於在相對於線狀液體之形成方向而相正交的方向上來作了切斷之縱剖面。 Figure 22 is a diagram showing parallel lines from a linear liquid. The conceptual view of the case is a three-dimensional cross-sectional view, conceptually corresponding to a longitudinal section cut in a direction orthogonal to the direction in which the linear liquid is formed.

在圖22中，1係為基材，102係為包含有導電材料之線狀液體，103係為藉由在線狀液體102之緣部處將導電材料選擇性地作堆積所形成的塗膜(亦有稱作平行線圖案的情況)。 In Fig. 22, 1 is a substrate, 102 is a linear liquid containing a conductive material, and 103 is a coating film formed by selectively depositing a conductive material at the edge of the linear liquid 102 ( There is also a case called a parallel line pattern).

在圖22(a)中，於基材1上，係賦予有包含導電材料之線狀液體102。 In Fig. 22 (a), a linear liquid 102 containing a conductive material is applied to the substrate 1.

如同圖22(b)中所示一般，在使包含有導電材料之線狀液體102蒸發並乾燥時，係利用咖啡漬現象，來在線狀液體102之緣部處將導電材料選擇性地作堆積。 As shown in Fig. 22(b), when the linear liquid 102 containing the conductive material is evaporated and dried, the conductive material is selectively deposited at the edge of the linear liquid 102 by the coffee stain phenomenon. .

咖啡漬現象，係可藉由在使線狀液體102乾燥時之條件設定來使其產生。 The coffee stain phenomenon can be produced by setting the conditions when the linear liquid 102 is dried.

亦即是，被配置在基材1上之線狀液體102的乾燥，相較於中央部，在緣部處係為快速，並隨著乾燥之進行而使固形量濃度到達飽和濃度，在線狀液體102之緣部處係發生固形量之局部性的析出。起因於此析出了的固形量，線狀液體102之緣部係成為被作了固定化的狀態，伴隨著後續之乾燥，線狀液體102之寬幅方向的收縮係被抑制。線狀液體102之液體，係會以對於在緣部處之起因於蒸發而失去之量的液體作補充的方式，而形成從中央部起朝向緣部的對流。此對流，由於係起因於伴隨著乾燥所發生的線狀液體102之接觸線的固定化和線狀液體 102中央部和緣部間之蒸發量之差所導致者，因此，係會因應於固形量濃度、線狀液體102和基材1之接觸角、線狀液體102之量、基材1之加熱溫度、線狀液體102之配置密度或者是溫度、濕度、氣壓之環境因素而改變，而能夠藉由對於此些作調整來進行控制。 That is, the drying of the linear liquid 102 disposed on the substrate 1 is faster at the edge than the central portion, and the solid concentration reaches the saturated concentration as the drying progresses, and is linear. A localized precipitation of the solid content occurs at the edge of the liquid 102. Due to the solid content precipitated therefrom, the edge portion of the linear liquid 102 is in a state of being fixed, and the shrinkage in the width direction of the linear liquid 102 is suppressed with subsequent drying. The liquid of the linear liquid 102 forms a convection from the central portion toward the edge portion in such a manner as to complement the amount of liquid lost at the edge portion due to evaporation. This convection is caused by the fixation of the contact line of the linear liquid 102 accompanying the drying and the linear liquid. The difference between the evaporation amount between the central portion and the edge portion of 102 is caused by the solid concentration, the contact angle of the linear liquid 102 and the substrate 1, the amount of the linear liquid 102, and the heating of the substrate 1. The temperature, the arrangement density of the linear liquid 102 or the environmental factors of temperature, humidity, and air pressure are changed, and can be controlled by adjusting for such.

其結果，如圖22(c)中所示一般，在基材1上，係被形成由包含有導電材料之細線所成的平行線圖案103。由1根的線狀液體102所形成的平行線圖案103，係藉由1組2根的線段131、132所構成。 As a result, as shown in Fig. 22 (c), on the substrate 1, a parallel line pattern 103 made of a thin line containing a conductive material is formed. The parallel line pattern 103 formed of one linear liquid 102 is composed of one set of two line segments 131 and 132.

平行線圖案103，例如，係為被施加有燒結處理或電鍍處理等之後處理者。 The parallel line pattern 103 is, for example, a post-processer to which a sintering process, a plating process, or the like is applied.

對於基材上之線狀液體的賦予，係可使用液滴吐出裝置來進行。具體而言，藉由一面使液滴吐出裝置相對於基材而作相對移動，一面從液滴吐出裝置之噴嘴來吐出複數之包含導電材料之液滴，並使吐出之液滴在基材上而合併為一，係能夠形成包含導電材料之線狀液體。液滴吐出裝置，例如，係可藉由噴墨記錄裝置所具備的噴墨頭來構成之。 The application of the linear liquid on the substrate can be carried out using a droplet discharge device. Specifically, by relatively moving the droplet discharge device relative to the substrate, a plurality of droplets containing the conductive material are discharged from the nozzle of the droplet discharge device, and the discharged droplets are placed on the substrate. When combined into one, it is capable of forming a linear liquid containing a conductive material. The droplet discharge device can be constituted, for example, by an inkjet head provided in the inkjet recording device.

圖23，係為對於形成導電性圖案之方法的其中一例作概念性說明之平面圖。 Fig. 23 is a plan view conceptually illustrating one example of a method of forming a conductive pattern.

首先，如同圖23(a)中所示一般，在基材1上，以沿著X方向的方式來形成複數之第1線狀液體102。 First, as shown in FIG. 23(a), a plurality of first linear liquids 102 are formed on the substrate 1 in the X direction.

藉由使此些之第1線狀液體102乾燥，如同 圖23(b)中所示一般，係能夠由各個的第1線狀液體102來形成第1平行線圖案103。第1平行線圖案103，係藉由線段131、132所構成。 By drying the first linear liquid 102, As shown in FIG. 23(b), in general, the first parallel line pattern 103 can be formed by each of the first linear liquids 102. The first parallel line pattern 103 is composed of line segments 131 and 132.

接著，如同圖23(c)中所示一般，在基材1上，以沿著以特定之角度而與X方向相交叉之方向Y的方式，來形成複數之第2線狀液體104。前述特定之角度，係並未特別作限定，但是，如同圖示之例一般，係以身為90°為理想。第2線狀液體104，係以會與第1平行線圖案103相交叉的方式而被賦予。 Next, as shown in FIG. 23(c), a plurality of second linear liquids 104 are formed on the substrate 1 so as to follow the direction Y intersecting the X direction at a specific angle. The specific angle described above is not particularly limited, but it is preferably 90° as in the illustrated example. The second linear liquid 104 is provided so as to intersect the first parallel line pattern 103.

藉由使此些之第2線狀液體104乾燥，如同圖23(d)中所示一般，係能夠由各個的第2線狀液體104來形成第2平行線圖案105。第2平行線圖案105，係藉由線段151、152所構成。 By drying the second linear liquid 104 as described above, the second parallel line pattern 105 can be formed by each of the second linear liquids 104 as shown in FIG. 23(d). The second parallel line pattern 105 is composed of line segments 151 and 152.

如此這般，係能夠形成使第1平行線圖案103和第2平行線圖案105相互交叉所成的網格狀圖案106。 In this manner, the grid pattern 106 in which the first parallel line pattern 103 and the second parallel line pattern 105 are intersected with each other can be formed.

在圖示之例中，第1平行線圖案103係被形成於沿著矩形狀之基材1之1個邊的方向上，第2平行線圖案105係被形成於沿著與前述1個邊相正交之其他邊的方向上，但是，係並不被限定於此，第1平行線圖案103、第2平行線圖案105，係亦能夠分別沿著相對於基材1之邊而有所傾斜的方向來形成。 In the illustrated example, the first parallel line pattern 103 is formed in a direction along one side of the rectangular base material 1, and the second parallel line pattern 105 is formed along the one side The directions of the other sides orthogonal to each other are not limited thereto, and the first parallel line pattern 103 and the second parallel line pattern 105 may be respectively along the side with respect to the substrate 1. The direction of the tilt is formed.

接著，以與網格狀圖案106的端部之至少一部分相重疊的方式，而形成平塗圖案207。平塗圖案207，係在基材1上之特定之區域內的全面處而被形成為 平塗膜狀。 Next, a flat coating pattern 207 is formed so as to overlap at least a portion of the end portion of the grid pattern 106. The flat coating pattern 207 is formed as a comprehensive portion in a specific region on the substrate 1 to be formed as Flat coated film.

在圖示之例中，係以與網格狀圖案106的周緣之其中一側相重疊的方式，而形成有平塗圖案207。更具體而言，係以與作為全體而被形成為方形狀之網格狀圖案106的4邊中之其中1邊相重疊的方式，而形成有平塗圖案207。 In the illustrated example, a flat coating pattern 207 is formed so as to overlap one of the peripheral edges of the grid pattern 106. More specifically, the flat coating pattern 207 is formed so as to overlap one of the four sides of the grid-like pattern 106 formed into a square shape as a whole.

又，如同圖示一般，平塗圖案207，較理想，係以與構成網格狀圖案106之平行線圖案103、105中的1以上之平行線圖案之端部相重疊的方式而被形成。如同圖23(d)中所示一般，在平行線圖案103、105之端部處，構成此之2根的線段，係藉由以U字狀而描繪出曲線的迴圈部U而被相互作連結。如同圖23(e)中所示一般，較理想，係以與該迴圈部U相重疊的方式，而形成平塗圖案207。藉由此，在導電材料之濃度容易產生參差之迴圈部U處，係能夠適當地防止該參差。 Moreover, as shown in the figure, the flat coating pattern 207 is preferably formed so as to overlap the end portions of the parallel line patterns of one or more of the parallel line patterns 103 and 105 constituting the mesh pattern 106. As shown in FIG. 23(d), at the end portions of the parallel line patterns 103 and 105, the line segments constituting the two are mutually mutually drawn by the loop portion U in which the curve is drawn in a U shape. Make a link. As shown generally in Fig. 23(e), it is preferable to form the flat coating pattern 207 in such a manner as to overlap the loop portion U. Thereby, at the loop portion U where the concentration of the conductive material is likely to be generated, the stagger can be appropriately prevented.

作為形成平塗圖案207之方法，係可使用網版印刷等之印刷法、液滴吐出法(噴墨法、分配器法等)、轉印法等之各種的方法。 As a method of forming the flat coating pattern 207, various methods such as a printing method such as screen printing, a droplet discharge method (inkjet method, dispenser method, etc.), and a transfer method can be used.

平塗圖案207，係以使用液滴吐出裝置來形成為理想。具體而言，藉由一面使液滴吐出裝置相對於基材1而作相對移動，一面從液滴吐出裝置之噴嘴來在基材1上之特定的區域內吐出複數之包含導電材料之液滴，並使吐出之液滴在基材1上乾燥，係能夠形成平塗圖案207。 The flat pattern 207 is preferably formed by using a droplet discharge device. Specifically, a plurality of droplets containing a conductive material are ejected from a nozzle of the droplet discharge device in a specific region on the substrate 1 while relatively moving the droplet discharge device relative to the substrate 1 The dried droplets are dried on the substrate 1 to form a flat coating pattern 207.

為了形成平塗圖案207而被賦予至基材1上 的包含導電材料之液滴，係並不需要如同上述之在形成線狀液體的情況時一般地而使液滴彼此相互合併為一，若是使液滴彼此並不相互合併為一地而進行乾燥，則亦為理想。 Is applied to the substrate 1 in order to form the flat coating pattern 207 The droplets containing the conductive material do not need to be combined with each other as a whole in the case of forming a linear liquid as described above, and the droplets are dried if they are not combined with each other. It is also ideal.

又，若是將在使為了形成平塗圖案207而被賦予至基材1上的包含導電材料之液滴乾燥時之乾燥條件，設為與在形成平行線圖案時之乾燥條件相異，則亦為理想。在形成平塗圖案207時，係並不需要如同在形成平行線圖案的情況時一般地而於液滴內部使對流產生，若是適用相較於形成平行線圖案的情況而更加對於對流作了抑制的乾燥條件或者是對於咖啡漬現象作了抑制的乾燥條件，則亦為理想。 Moreover, if the drying conditions of the conductive material-containing droplets applied to the substrate 1 in order to form the flat coating pattern 207 are dried, the drying conditions are different from those in forming the parallel line pattern. Ideal. When the flat coating pattern 207 is formed, it is not necessary to cause convection inside the droplet as in the case of forming a parallel line pattern, and it is more suitable for convection than in the case of forming a parallel line pattern. It is also desirable to dry conditions or dry conditions that inhibit coffee stains.

較理想，係藉由對於液滴之乾燥條件、液滴之吐出條件或者是對於基材之賦予條件等作適宜設定，而將平塗圖案207盡可能地以膜厚會成為均一的方式來形成之。 Preferably, the flat coating pattern 207 is formed such that the film thickness is uniform as much as possible by appropriately setting the drying conditions of the droplets, the discharge conditions of the droplets, or the conditions for the substrate. It.

作為用以形成平塗圖案207之液滴吐出裝置，較理想，係使用為了形成網格狀圖案106所使用的液滴吐出裝置。 As the droplet discharge device for forming the flat pattern 207, it is preferable to use a droplet discharge device used to form the grid pattern 106.

在平塗圖案207中所包含的導電材料，係可為與在網格狀圖案106中所包含之導電材料相同，亦可為相異。 The conductive material contained in the flat pattern 207 may be the same as or different from the conductive material contained in the grid pattern 106.

接著，針對導電性圖案，列舉出更進一步之形態，並作更詳細之說明。 Next, a further form will be described for the conductive pattern, and a more detailed description will be given.

圖24，係為對於導電性圖案之構成例作概念性說明之平面圖。 Fig. 24 is a plan view conceptually illustrating a configuration example of a conductive pattern.

在圖24(a)中所示之導電性圖案，係藉由網格狀圖案106、和以會與該網格狀圖案106的周緣之全周相重疊的方式所形成的平塗圖案207，而構成之。係以與作為全體而被形成為方形狀之網格狀圖案106的4邊之各者相重疊的方式，而形成有平塗圖案207。 The conductive pattern shown in FIG. 24(a) is formed by the grid pattern 106 and the flat pattern 207 formed so as to overlap the entire circumference of the periphery of the grid pattern 106. And constitute it. The flat pattern 207 is formed so as to overlap each of the four sides of the grid pattern 106 formed as a square shape as a whole.

在圖24(b)中所示之導電性圖案，係藉由網格狀圖案106、和以會與該網格狀圖案106的周緣之其中一側以及與該其中一側相對向之另外一側相重疊的方式所形成之2個的平塗圖案207，而構成之。係以與作為全體而被形成為方形狀之網格狀圖案106的4邊中之相互對向之2邊的各者相重疊的方式，而形成有2個的平塗圖案207。若是作更詳細之說明，則被形成有平塗圖案207之前述2邊，係對應於被形成為長方形狀之網格狀圖案106的長邊。 The conductive pattern shown in FIG. 24(b) is formed by the grid pattern 106 and the other side of the circumference of the grid pattern 106 and the other side thereof. The two flat patterns 207 formed by overlapping the side layers are formed. Two flat patterns 207 are formed so as to overlap each of the two sides of the four sides of the grid-like pattern 106 formed as a square shape as a whole. For a more detailed description, the two sides of the flat coating pattern 207 are formed to correspond to the long sides of the grid-like pattern 106 formed into a rectangular shape.

在圖24(c)中所示之導電性圖案，係亦與在圖24(b)中所示者相同的，係以與作為全體而被形成為方形狀之網格狀圖案106的4邊中之相互對向之2邊的各者相重疊的方式，而形成有2個的平塗圖案207。在此例中，被形成有平塗圖案207之前述2邊，係對應於被形成為長方形狀之網格狀圖案106的短邊。 The conductive pattern shown in Fig. 24(c) is also the same as that shown in Fig. 24(b), and is four sides of the grid-like pattern 106 which is formed into a square shape as a whole. Two flat patterns 207 are formed in such a manner that the two sides of the opposite sides overlap each other. In this example, the two sides of the flat coating pattern 207 are formed to correspond to the short sides of the grid-like pattern 106 formed into a rectangular shape.

圖25，係為對於導電性圖案之其他構成例作概念性說明之平面圖。 Fig. 25 is a plan view conceptually illustrating another configuration example of the conductive pattern.

在圖25(a)~(c)所示之導電性圖案中，網格狀圖案106和平塗圖案207之全體性的配置關係，係與圖24(a)~(c)中所示者相同。 In the conductive patterns shown in Figs. 25(a) to (c), the overall arrangement relationship of the mesh pattern 106 and the flat pattern 207 is the same as that shown in Figs. 24(a) to (c). .

在圖24以及圖25之例中，構成網格狀圖案106之平行線圖案103、105，係以相互以90°來相交叉的方式而被作配置，但是，在圖24之例中，平行線圖案103、105係被形成於沿著方形狀之基材1之某1邊的方向上，相對於此，在圖25之例中，平行線圖案103、105，係被形成於相對於沿著方形狀之基材1之邊的方向而以特定之角度(在圖示之例中，係為45°)來作了傾斜的方向上。 In the example of Fig. 24 and Fig. 25, the parallel line patterns 103 and 105 constituting the mesh pattern 106 are arranged so as to intersect each other at 90 degrees. However, in the example of Fig. 24, parallel The line patterns 103 and 105 are formed in a direction along one side of the square substrate 1 , whereas in the example of FIG. 25 , the parallel line patterns 103 and 105 are formed on the opposite side. The direction of the side of the square-shaped base material 1 is inclined at a specific angle (45° in the illustrated example).

又，在圖24以及圖25之例中，平塗圖案207，係在沿著方形狀之基材1的某1邊之方向上而被形成為帶狀。 Moreover, in the example of FIG. 24 and FIG. 25, the flat coating pattern 207 is formed in the strip shape in the direction along the one side of the square-shaped base material 1.

故而，在圖24之例中，構成網格狀圖案106之平行線圖案103、105，係相對於平塗圖案207，而以直角作連接，相對於此，在圖25之例中，構成網格狀圖案106之平行線圖案103、105，係相對於平塗圖案207，而以相傾斜的方式作連接。 Therefore, in the example of Fig. 24, the parallel line patterns 103, 105 constituting the grid pattern 106 are connected at right angles to the flat pattern 207, whereas in the example of Fig. 25, the network is constructed. The parallel line patterns 103, 105 of the lattice pattern 106 are connected in a phase-inclined manner with respect to the flat pattern 207.

又，在圖24(b)以及(c)和圖25(b)以及(c)之例中，被作了複數設置之平塗圖案207，係分別被設置在網格狀圖案106之其中一側處。此時，在圖24(b)以及(c)之例中，1個的平塗圖案207，係僅與平行線圖案103以及平行線圖案105之其中一方作連接， 相對於此，在圖25(b)以及(c)之例中，1個的平塗圖案207，係與平行線圖案103以及平行線圖案105之雙方作連接。 Further, in the examples of Figs. 24(b) and (c) and Figs. 25(b) and (c), the plurality of flat patterns 207 which are provided in plural are provided in one of the grid patterns 106, respectively. Side. At this time, in the examples of FIGS. 24( b ) and ( c ), one flat pattern 207 is connected only to one of the parallel line pattern 103 and the parallel line pattern 105 . On the other hand, in the examples of FIGS. 25(b) and (c), one flat pattern 207 is connected to both the parallel line pattern 103 and the parallel line pattern 105.

在能夠更加顯著地發揮本形態之效果的觀點來看，平塗圖案207，更理想，係以與構成網格狀圖案106之平行線圖案103以及105的雙方作連接的方式而被形成。 The flat pattern 207 is preferably formed so as to be connected to both of the parallel line patterns 103 and 105 constituting the mesh pattern 106 from the viewpoint of more effectively exhibiting the effect of the present embodiment.

圖26，係為對於將導電性圖案作分割的其中一例作概念性說明之平面圖。 Fig. 26 is a plan view conceptually illustrating an example in which a conductive pattern is divided.

如同圖26(a)中所示一般，導電性圖案，係藉由網格狀圖案106、和以會與該網格狀圖案106的其中一側之端部相重疊的方式所形成的平塗圖案207，而構成之。 As shown in FIG. 26(a), the conductive pattern is formed by the grid pattern 106 and the flat coating formed to overlap the end of one side of the grid pattern 106. The pattern 207 is formed.

藉由對於該導電性圖案，而部分性地施加將構成該導電性圖案之導電材料從基材1上而除去的處理，如同圖26(b)中所示一般，係能夠形成由被殘留在基材1上之導電材料所成之新的圖案。 By partially applying the conductive material constituting the conductive pattern to the substrate 1 by the conductive pattern, as shown in FIG. 26(b), it can be formed by being left in the A new pattern of conductive material on the substrate 1.

在圖示之例中，係對於網格狀圖案106和平塗圖案207之雙方，而施加導電材料之部分性的除去處理，並將各圖案作分割。 In the illustrated example, a partial removal process of the conductive material is applied to both the mesh pattern 106 and the flat coating pattern 207, and the respective patterns are divided.

對於網格狀圖案106，係以將其分割成複數之單元的方式，而施加有除去處理。各個的單元，作為全體係呈現有帶狀之形狀，但是，其之細部，則係為藉由由平行線圖案103、105(圖中，未圖示)所成之網格狀圖案 106所構成。在圖示之例中，係將網格狀圖案106，分割成相互並列的複數之帶狀圖案(單元)。 The mesh pattern 106 is subjected to a removal process in such a manner as to divide it into a plurality of cells. Each unit has a strip shape as a whole system, but the details thereof are a grid pattern formed by parallel line patterns 103 and 105 (not shown). 106 constitutes. In the illustrated example, the grid pattern 106 is divided into a plurality of strip patterns (units) which are juxtaposed to each other.

對於平塗圖案207，係以將其作成複數之細線圖案208的方式，而施加有除去處理。此些之細線圖案208，係被與作了分割的複數之網格狀圖案106之各者作連接，並例如作為導出配線而合適地起作用。 For the flat coating pattern 207, a removal process is applied in such a manner that it is formed into a plurality of thin line patterns 208. These fine line patterns 208 are connected to each of the divided plurality of grid patterns 106 and function as, for example, a lead-out wiring.

此些之細線圖案208，係如同上述一般，為與構成平行線圖案103、105之線段相異，在將空間縮窄一事上而言係為有利，而適於達成省空間化。 Such thin line patterns 208 are generally different from the line segments constituting the parallel line patterns 103 and 105 as described above, and are advantageous in terms of narrowing the space, and are suitable for space saving.

作為為了進行導電材料之部分性之除去處理所使用的方法，只要是能夠將特定之區域的導電材料選擇性地除去者，則係並未特別作限定，例如，係可理想例示出雷射法或光微影法等。此些，係可對於網格狀圖案106而合適地使用，亦可對於平塗圖案207而合適地使用。 The method used for the partial removal treatment of the conductive material is not particularly limited as long as it can selectively remove the conductive material in a specific region. For example, a laser method can be preferably used. Or photolithography. These may be suitably used for the grid pattern 106, or may be suitably used for the flat pattern 207.

作為在雷射法中所使用之雷射，係可使用準分子雷射、YAG雷射、CO₂雷射、光纖雷射等之各種雷射。 As the laser used in the laser method, various kinds of lasers such as excimer laser, YAG laser, CO ₂ laser, and fiber laser can be used.

為了將導電材料選擇性地除去，係亦能夠以成為會吸收此些之雷射之波長的方式來對於導電材料進行加工或者是對於細線圖案、平塗圖案之表面進行加工。 In order to selectively remove the conductive material, it is also possible to process the conductive material in such a manner as to absorb the wavelength of the laser or to process the surface of the fine line pattern or the flat pattern.

圖27，係為對於將導電性圖案作分割的其他例作概念性說明之平面圖。 Fig. 27 is a plan view conceptually illustrating another example in which a conductive pattern is divided.

如同圖27(a)中所示一般，導電性圖案，係藉由由相互被作了並列的複數之帶狀圖案所成之網格狀圖 案106、和以會與此些之複數之網格狀圖案106的其中一側之各者之端部相重疊的方式所形成的平塗圖案207，而構成之。 As shown in Fig. 27(a), the conductive pattern is formed by a grid pattern of a plurality of strip patterns which are juxtaposed to each other. The case 106 is formed by a planing pattern 207 formed so as to overlap the end of each of the one side of the plurality of grid patterns 106.

與圖26之例相異，在圖27之例中，係以使網格狀圖案106成為預先被作了分割之狀態的方式，來藉由噴墨法而進行了圖案化。如同上述一般，係能夠使用液滴吐出裝置來形成網格狀圖案106，但是，藉由將從該液滴吐出裝置而來之液滴的賦予區域設定於複數之區域(在圖示之例中，係為帶狀之區域)處，係能夠將網格狀圖案106作為被個別地形成之複數的單元來形成之。 Unlike the example of Fig. 26, in the example of Fig. 27, the grid pattern 106 is patterned in a state in which it is divided in advance, and is patterned by an inkjet method. As described above, the mesh pattern 106 can be formed using the droplet discharge device, but the application region of the droplets from the droplet discharge device is set in a plurality of regions (in the illustrated example). In the case of a strip-shaped region, the grid pattern 106 can be formed as a plurality of cells that are individually formed.

藉由對於該導電性圖案，而部分性地施加將構成該導電性圖案之導電材料從基材1上而除去的處理，如同圖27(b)中所示一般，係能夠形成由被殘留在基材1上之導電材料所成之新的圖案。 By partially applying the conductive material constituting the conductive pattern to the substrate 1 by the conductive pattern, as shown in FIG. 27(b), it can be formed by being left in the A new pattern of conductive material on the substrate 1.

在圖示之例中，由於網格狀圖案106係預先被作了分割，因此，係對於平塗圖案207，而施加導電材料之部分性的除去處理，並將其作分割。 In the illustrated example, since the grid pattern 106 is divided in advance, a partial removal process of the conductive material is applied to the flat pattern 207, and the film is divided.

對於平塗圖案207，係以將其作成複數之細線圖案208的方式，而施加有除去處理。與圖26(b)之例相同的，此些之細線圖案208，係被與作了分割的複數之網格狀圖案106之各者作連接，並例如作為導出配線而合適地起作用。 For the flat coating pattern 207, a removal process is applied in such a manner that it is formed into a plurality of thin line patterns 208. Similarly to the example of Fig. 26(b), the thin line patterns 208 are connected to each of the plurality of divided grid patterns 106, and function as, for example, a lead wiring.

接著，參考圖28，對於網格狀圖案106與細線208的連接形態作說明。 Next, a connection form of the mesh pattern 106 and the thin line 208 will be described with reference to FIG.

圖28，係為對於網格狀圖案106與細線208的連接形態之例作概念性說明之平面圖。 Fig. 28 is a plan view conceptually illustrating an example of a connection form of the grid pattern 106 and the thin line 208.

在圖28之例中，細線208之端部，係以與網格狀圖案106之端部相重疊的方式，而被設置。 In the example of Fig. 28, the end portion of the thin line 208 is provided so as to overlap the end portion of the grid pattern 106.

於此，在細線208之端部處的連接部209，係對於網格狀圖案106，而涵蓋該細線208之線寬幅以上之寬幅地來作連接，更具體而言，係涵蓋網格狀圖案106之1邊之全體地來作連接。網格狀圖案106，係以帶狀之形狀而被設置，細線208，係藉由連接部209，而在該網格狀圖案106處，以相當於該帶狀之形狀的帶寬幅之寬幅來作連接。藉由此，細線208，係發揮作為導出配線之功用，並且，係成為能夠更合適地發揮將起因於在網格狀圖案之端部處的導電材料之濃度的參差所導致之問題減輕之功用。 Here, the connecting portion 209 at the end of the thin line 208 is connected to the grid pattern 106, and covers the width of the thin line 208 above the width of the line 208, and more specifically, covers the grid. One side of the pattern 106 is connected as a whole. The grid pattern 106 is provided in a strip shape, and the thin line 208 is connected to the grid pattern 106 at a width corresponding to the strip shape. Come to connect. As a result, the thin line 208 functions as a lead-out wiring, and the function of alleviating the problem caused by the variation of the concentration of the conductive material at the end portion of the mesh pattern can be more appropriately exhibited. .

另外，圖28，係可相當於在圖26(b)以及圖27(b)中所示之網格狀圖案106與細線208的被作連接之區域之擴大圖。 In addition, FIG. 28 is an enlarged view corresponding to a region where the mesh pattern 106 and the thin line 208 are connected as shown in FIGS. 26(b) and 27(b).

在以上之說明中，雖係針對將平塗圖案形成為帶狀的情況來作了展示，但是，係並不被限定於此，對於平塗圖案，例如係可賦予方形狀、三角形狀、圓形狀、橢圓形狀或者是將此些之2者以上作了組合的形狀等之任意之形狀。若是將平塗圖案之形成區域設定為會將想要藉由該平塗圖案來形成的導出配線之形成區域之全體作被覆，則為理想。 In the above description, although the flat coating pattern is formed in a belt shape, it is not limited thereto, and for the flat coating pattern, for example, a square shape, a triangular shape, or a circle may be imparted. The shape, the elliptical shape, or any shape such as a shape in which two or more of these are combined. It is preferable to set the formation region of the flat pattern to cover the entire formation region of the lead wiring to be formed by the flat pattern.

在以上之說明中，雖係針對在形成導電性圖案時，於形成網格狀圖案的工程之後而具備有形成平塗圖案之工程的情況來作了展示，但是，係並不被限定於此。例如，亦可在形成平塗圖案之工程之後，而具備形成網格狀圖案的工程。又，係亦可構成為：先形成網格狀圖案之一部分的平行線(例如，上述之平行線103)，接著，形成平塗圖案，接著，再形成網格狀圖案之其他之一部分的平行線(例如，上述之平行線105)。最理想，係為在形成網格狀圖案之工程之後，具備有形成平塗圖案之工程。 In the above description, the case where the conductive pattern is formed is provided after the process of forming the grid pattern, and the process of forming the planer pattern is provided. However, the present invention is not limited thereto. . For example, it is also possible to provide a process of forming a grid pattern after the process of forming a flat pattern. Further, it may be configured to form a parallel line of a portion of the grid pattern (for example, the parallel line 103 described above), and then form a flat coating pattern, and then form a parallel of the other portion of the grid pattern. Line (for example, parallel line 105 above). Ideally, after the process of forming a grid pattern, there is a process of forming a flat pattern.

被形成有以上所說明之導電性圖案的對象物，係並不被限定於2維薄片狀之基材，而亦可合適地適用在3維構造體(係有單純稱作構造體的情況)中。 The object to be formed with the conductive pattern described above is not limited to the two-dimensional sheet-like substrate, and may be suitably applied to a three-dimensional structure (in the case of simply referred to as a structure) in.

所謂構造體，係指2維薄片狀以外之對象物，而可為直方體狀、球狀、圓柱狀、角柱狀、該些之組合、具有曲線(曲面)者等，只要是含有3維形狀者，則並不特別作限定。 The structure refers to an object other than a two-dimensional sheet, and may be a rectangular parallelepiped shape, a spherical shape, a cylindrical shape, a prismatic shape, a combination of the above, and a curve (curved surface), as long as it contains a three-dimensional shape. However, it is not particularly limited.

圖29，係為對於被形成有導電性圖案的構造體之其中一例作展示之說明圖。 Fig. 29 is an explanatory view showing an example of a structure in which a conductive pattern is formed.

在圖示之例中，於構造體1'之曲面上，係被形成有導電性圖案50。 In the illustrated example, the conductive pattern 50 is formed on the curved surface of the structure 1'.

構造體1'之材質，係並未特別作限定，但是，係可合適例示有由塑膠、金屬、陶瓷、石材、漿料、木材所形成者、橡膠、該些之複合材料等。 The material of the structure 1' is not particularly limited, but may be suitably exemplified by plastic, metal, ceramic, stone, slurry, wood, rubber, composite materials thereof, and the like.

導電性圖案50，係可設置在該構造體1'表面 之全體或者是一部分處。 The conductive pattern 50 may be disposed on the surface of the structural body 1' All or part of it.

在構造體1'之表面處，係亦可於被形成有導電性圖案之特定之部位處，以能夠判別出該特定之部位的方式來顯示有畫像資訊(未圖示)。構造體表面之畫像資訊，係能夠以當於其上被形成有導電性圖案時可隔著該導電性圖案而作視覺辨認的方式來設置之。作為畫像資訊，雖並未特別作限定，但是，係可合適例示有文字、記號、著色圖案等。此些之畫像資訊，例如，係可在開關、鍵盤、觸控面板、感測器等之用途中，對於位置檢測等之功能作導引。畫像資訊，係並不需要恆常作顯示，例如亦可構成為能夠在特定之條件下而顯示。 At the surface of the structure 1', image information (not shown) may be displayed in a specific portion where the conductive pattern is formed, so that the specific portion can be determined. The image information on the surface of the structure can be set such that the conductive pattern can be visually recognized when the conductive pattern is formed thereon. The portrait information is not particularly limited, but a character, a symbol, a colored pattern, and the like can be suitably exemplified. Such portrait information, for example, can be used for guiding functions such as position detection in switches, keyboards, touch panels, sensors, and the like. The portrait information does not need to be displayed constantly, and for example, it can be configured to be displayed under specific conditions.

製造具備有導電性圖案50之構造體1'之方法，係並未特別作限定，而亦可直接在構造體1'之表面上形成導電性圖案，但是，作為理想之方法的其中一例，係可例示有使用被形成有導電性圖案之基材(附導電性圖案基材)來進行製造之方法。 The method of manufacturing the structure 1' having the conductive pattern 50 is not particularly limited, and a conductive pattern may be formed directly on the surface of the structure 1'. However, as an example of an ideal method, A method of manufacturing using a substrate (with a conductive pattern substrate) on which a conductive pattern is formed can be exemplified.

例如，較理想，係使用將附導電性圖案基材貼合於構造體1'之表面上的方法、或者是從附導電性圖案基材來將導電性圖案50之部分轉印至構造體1'之表面上之方法，來製造於表面上具備有導電性圖案50之構造體1'。 For example, it is preferable to use a method in which a conductive pattern substrate is attached to the surface of the structural body 1', or a portion of the conductive pattern 50 is transferred from the conductive pattern substrate to the structural body 1. The method on the surface is manufactured by a structure 1' having a conductive pattern 50 on its surface.

圖30，係為對於使用附導電性圖案基材來在構造體1'表面上形成導電性圖案50的方法之例作展示之說明圖。 Fig. 30 is an explanatory view showing an example of a method of forming a conductive pattern 50 on the surface of a structure 1' using a conductive pattern substrate.

在圖30(a)之例中，係隔著接著層17，而將被形成有導電性圖案50之基材1，以將導電性圖案50側配向於構造體1'側的方式來貼合於構造體1'上。18，係為被設置在基材1上之樹脂層，導電性圖案50，係在基材1上，而被形成於樹脂層18之表面上。如此這般，將附導電性圖案基材貼合在構造體1'表面上，而可在構造體1'之表面上形成導電性圖案50。 In the example of FIG. 30( a ), the base material 1 on which the conductive pattern 50 is formed is bonded to the side of the structure 1 ′ by the side of the conductive pattern 50 side via the adhesive layer 17 . On the structure 1'. 18 is a resin layer provided on the substrate 1, and the conductive pattern 50 is formed on the substrate 1 and formed on the surface of the resin layer 18. In this manner, the conductive pattern substrate is bonded to the surface of the structure 1', and the conductive pattern 50 can be formed on the surface of the structure 1'.

又，如同圖30(b)之例中所示一般，藉由更進而具備有從圖30(a)之例中所示的導電性圖案50上而將基材1剝離之工程，係能夠將導電性圖案50轉印至構造體1'之表面上。於此情況，例如，藉由在基材1和樹脂層18之間而預先施加用以使剝離成為容易的易剝離處理，係能夠在基材1和樹脂層18之界面處而容易地進行剝離。 Further, as shown in the example of FIG. 30(b), the substrate 1 can be peeled off by further including the conductive pattern 50 shown in the example of FIG. 30(a). The conductive pattern 50 is transferred onto the surface of the structural body 1'. In this case, for example, an easy peeling treatment for facilitating peeling is applied between the substrate 1 and the resin layer 18, and the peeling can be easily performed at the interface between the substrate 1 and the resin layer 18. .

本發明之導電性圖案之用途，係並未特別限定，但是，係可作為透明導電膜等而合適地使用。 The use of the conductive pattern of the present invention is not particularly limited, but can be suitably used as a transparent conductive film or the like.

本發明之附導電性圖案基材以及構造體之用途，係並未特別限定，但是，係可作為各種之電子機器所具備的各種之裝置來使用。在能夠顯著地發揮本發明之效果的觀點來看，例如，係可作為液晶、電漿、有機電場發光、場發射等之各種方式的顯示器用透明電極，或者是作為被使用在觸控面板或行動電話、電子紙、各種太陽電池、各種電場發光調光元件等之中之透明電極，來合適地使用。 The use of the conductive pattern substrate and the structure of the present invention is not particularly limited, but can be used as various devices included in various electronic devices. From the viewpoint of exhibiting the effects of the present invention remarkably, for example, it can be used as a transparent electrode for display in various forms such as liquid crystal, plasma, organic electric field emission, field emission, or the like, or as a touch panel or Transparent electrodes among mobile phones, electronic papers, various solar cells, various electric field light-emitting dimming elements, and the like are suitably used.

更具體而言，本發明之附導電性圖案基材及構造體，係作為裝置之透明電極而合適地使用。作為裝置，雖並未特別作限定，但是，例如係可合適例示有觸控面板等。又，作為具備有此些裝置之電子機器，雖並未特別作限定，但是，例如係可合適例示有智慧型手機、平板終端等。 More specifically, the conductive pattern substrate and the structure of the present invention are suitably used as a transparent electrode of the device. The device is not particularly limited, and, for example, a touch panel or the like can be suitably exemplified. In addition, the electronic device including such a device is not particularly limited, and, for example, a smart phone, a tablet terminal, or the like can be suitably exemplified.

[實施例] [Examples]

以下，針對本發明之實施例作說明，但是，本發明係並不被限定於此些之實施例。 Hereinafter, the embodiments of the present invention will be described, but the present invention is not limited to the embodiments.

〈基材之調製〉 <Modulation of substrate>

作為基材，係準備了下述之基材1~4。另外，對於基材1以及2，係並未施加有表面處理，對於基材3以及4，係施加有表面處理。 As the substrate, the following substrates 1 to 4 were prepared. Further, surface treatment was not applied to the substrates 1 and 2, and surface treatment was applied to the substrates 3 and 4.

‧基材1：係為市面販賣之光學用途之已進行熱收縮處理之PET薄膜(厚度120μm)，表面能係為50mN/m。 ‧ Substrate 1: A PET film (thickness: 120 μm) which has been heat-shrinked for optical use in the market, and has a surface energy of 50 mN/m.

‧基材2：係為與基材1相異之市面販賣之光學用途之已進行熱收縮處理之PET薄膜(厚度120μm)，表面能係為42mN/m。 ‧ Substrate 2: A PET film (thickness: 120 μm) which has been subjected to heat shrinkage treatment for optical use which is different from the substrate 1 and has a surface energy of 42 mN/m.

‧基材3：係為對於基材1進行表面處理，而將表面能調整為60mN/m者。 ‧ Substrate 3: The surface treatment of the substrate 1 was carried out, and the surface energy was adjusted to 60 mN/m.

‧基材4：係為對於基材2進行表面處理，而將表面 能調整為60mN/m者。 ‧Substrate 4: is to surface treatment of the substrate 2, while the surface Can be adjusted to 60mN / m.

〈墨水之調製〉 <Ink Modulation> ‧墨水1(含有銀奈米粒子之墨水1) ‧Ink 1 (ink containing silver nanoparticles)

將銀奈米粒子分散物(BANDO化學製，SW1000)作為固形量(銀奈米粒子)而添加0.2wt%量，並添加二乙二醇一甲基醚20wt%，且將殘部設為離子交換水而最終調配為100wt%，再將此藉由1μm濾器來作了過濾。 A silver nanoparticle dispersion (manufactured by BANDO Chemical Co., Ltd., SW1000) was added as a solid amount (silver nanoparticle) in an amount of 0.2% by weight, and diethylene glycol monomethyl ether was added in an amount of 20% by weight, and the residue was made into an ion exchange. The water was finally formulated to be 100% by weight, and this was filtered by a 1 μm filter.

將所得到的透過液作為墨水1。身為導電性粒子之銀奈米粒子的濃度，在上述過濾前後係並未有實質性變化，在墨水1中係為0.2wt%。墨水1之黏度，係為2.0mPa‧s，表面張力係為29mN/m。 The obtained permeated liquid was used as the ink 1. The concentration of the silver nanoparticles as the conductive particles did not substantially change before and after the filtration, and was 0.2 wt% in the ink 1. The viscosity of the ink 1 was 2.0 mPa ‧ and the surface tension was 29 mN/m.

‧墨水2(含有銀奈米粒子之墨水2) ‧Ink 2 (ink containing silver nanoparticles 2)

將銀奈米粒子分散物(BANDO化學製，SW1000)作為固形量(銀奈米粒子)而添加0.2wt%量，並添加1，3丁二醇25wt%、界面活性劑(BYK公司製「BYK348」)0.5wt%，且將殘部設為離子交換水而最終調配為100wt%，再將此藉由1μm濾器來作了過濾。 The silver nanoparticle dispersion (SW1000, manufactured by BANDO Chemical Co., Ltd.) was added in an amount of 0.2 wt% as a solid amount (silver nanoparticle), and 25 wt% of 1,3 butanediol was added thereto, and a surfactant (BYK348 manufactured by BYK Corporation) was added. ” 0.5 wt%, and the residue was set to ion-exchanged water and finally formulated to be 100 wt%, and this was filtered by a 1 μm filter.

將所得到的透過液作為墨水2。身為導電性粒子之銀奈米粒子的濃度，在上述過濾前後係並未有實質性變化，在墨水2中係為0.2wt%。墨水2之黏度，係為3.5mPa‧s，表面張力係為31mN/m。 The obtained permeated liquid was used as the ink 2. The concentration of the silver nanoparticles as the conductive particles did not substantially change before and after the filtration, and was 0.2 wt% in the ink 2. The viscosity of the ink 2 was 3.5 mPa ‧ and the surface tension was 31 mN/m.

‧墨水3(含有銅奈米粒子之墨水) ‧Ink 3 (ink containing copper nanoparticles)

將銅奈米粒子分散物作為固形量(銅奈米粒子)而添加0.2wt%量，並添加乙二醇30wt%、界面活性劑(BYK公司製「BYK348」)0.5wt%，且將殘部設為離子交換水而最終調配為100wt%，再將此藉由1μm濾器來作了過濾。 The copper nanoparticle dispersion was added in an amount of 0.2 wt% as a solid amount (copper nanoparticle), and 30 wt% of ethylene glycol and a surfactant ("BYK348" manufactured by BYK Corporation) of 0.5 wt% were added, and the residue was set. It was finally formulated to 100 wt% for ion-exchanged water, and this was filtered by a 1 μm filter.

將所得到的透過液作為墨水3。身為導電性粒子之銅奈米粒子的濃度，在上述過濾前後係並未有實質性變化，在墨水3中係為0.2wt%。墨水3之黏度，係為4.0mPa‧s，表面張力係為32mN/m。 The obtained permeated liquid was used as the ink 3. The concentration of the copper nanoparticles as the conductive particles did not substantially change before and after the filtration, and was 0.2 wt% in the ink 3. The viscosity of the ink 3 was 4.0 mPa ‧ and the surface tension was 32 mN/m.

‧墨水4(含有銀粉之墨水) ‧Ink 4 (ink containing silver powder)

將平均粒徑為0.5μm之銀粉添加0.1wt%量，並添加乙二醇30wt%、界面活性劑(BYK公司製「BYK348」)0.5wt%，且將殘部設為離子交換水而最終調配為100wt%，再將此藉由1μm濾器來作了過濾。 Silver powder having an average particle diameter of 0.5 μm was added in an amount of 0.1% by weight, and 30 wt% of ethylene glycol and a surfactant ("BYK348" manufactured by BYK Corporation) of 0.5 wt% were added, and the residue was made into ion-exchanged water and finally formulated as 100 wt%, which was filtered by a 1 μm filter.

將所得到的透過液作為墨水4。身為導電性粒子之銀粉粒子的濃度，在上述過濾前後係並未有實質性變化，在墨水4中係為0.1wt%。墨水4之黏度，係為4.0mPa‧s，表面張力係為32mN/m。 The obtained permeated liquid was used as the ink 4. The concentration of the silver powder particles as the conductive particles did not substantially change before and after the filtration, and was 0.1 wt% in the ink 4. The viscosity of the ink 4 was 4.0 mPa ‧ and the surface tension was 32 mN/m.

‧導出配線用銀奈米墨水 ‧Export wiring silver nano ink

將銀奈米粒子分散物(BANDO化學製，SW1000)作為固形量(銀奈米粒子)而添加15wt%量，並添加丙二醇 20%，且將殘部設為離子交換水而最終調配為100wt%，再將此藉由1μm濾器來作了過濾，將所得到的透過液作為導出配線用銀奈米墨水。 A silver nanoparticle dispersion (manufactured by BANDO Chemical Co., Ltd., SW1000) was added as a solid amount (silver nanoparticle) in an amount of 15% by weight, and propylene glycol was added thereto. 20%, and the residual portion was made into ion-exchanged water and finally formulated to be 100% by weight, and this was filtered by a 1 μm filter, and the obtained permeate was used as a silver nano ink for lead-out wiring.

(實施例1) (Example 1)

使用圖10中所示之裝置，而對於寬幅300mm之卷狀基材，來如同下述一般地而作成了導電性圖案。 Using the apparatus shown in Fig. 10, for a roll substrate having a width of 300 mm, a conductive pattern was formed as generally described below.

〈集電線(導出配線)之形成〉 <Formation of the collection line (export wiring)>

首先，使用被併設於第1層形成區域6處之導出配線用噴墨頭，來使用導出配線用銀奈米墨水而描繪了導出配線。 First, using the inkjet head for the lead-out wiring which is provided in the first layer formation region 6, the lead-out wiring is drawn using the silver ink for the lead-out wiring.

將被賦予至基材上之墨水，在乾燥區域8中進行5分鐘之70℃的送風乾燥，而使其乾燥。 The ink to be applied to the substrate was air-dried at 70 ° C for 5 minutes in the drying zone 8 to be dried.

〈第1層之形成〉 <Formation of the first layer>

在上述乾燥之後，於第1層形成區域6處進行了第1層之圖案化。 After the above drying, the first layer is patterned in the first layer formation region 6.

在第1層形成區域6處，如同圖11中所示一般，以與基材搬送方向相正交的方式而配置有噴頭陣列61。 In the first layer formation region 6, as shown in FIG. 11, the head array 61 is disposed so as to be orthogonal to the substrate conveyance direction.

在噴頭陣列61處，係被配置有5個的噴墨頭(KONICA MINORTA公司製「KM1024L」(壓電方式，液滴量42pL))，陣列全體之印刷寬幅係被設為 360mm。 In the head array 61, five ink jet heads ("KM1024L" (piezoelectric method, droplet amount 42pL) manufactured by KONICA MINORTA Co., Ltd.) are disposed, and the printing width of the entire array is set. 360mm.

一面在基材搬送方向上搬送基材，一面同時使噴頭陣列61朝向右方向掃描，並射出導電性墨水(上述墨水1)，而如同圖12(a)中所示一般，形成了由斜線所成之條帶(第1印刷工程)。此時，係以使噴墨頭之噴嘴間隔會均等地成為280μm的方式來選擇噴嘴，並從所選擇的噴嘴，來在藉由搬送路徑下部之加熱器而使基材溫度被調整為70℃的基材上，以會成為1×10^-10m³/m的方式，來調整墨水吐出量，並形成了墨線。此時，液滴吐出頻率係為4.5KHz。此線，係在形成之後立即進行乾燥，並進而藉由對於乾燥條件作控制，來藉由乾燥而使導電材料選擇性地積聚於端部處，其結果，各個墨線，係成為了140μm間隔之2根的平行線。 While the substrate is being conveyed in the substrate transport direction, the head array 61 is simultaneously scanned in the right direction, and the conductive ink (the ink 1) is emitted, and as shown in FIG. 12(a), the oblique line is formed. It is a strip (the first printing project). In this case, the nozzle is selected such that the nozzle interval of the ink jet head is equal to 280 μm, and the substrate temperature is adjusted to 70 ° C by the heater at the lower portion of the transport path from the selected nozzle. On the substrate, the amount of ink discharged was adjusted so as to be 1 × 10 ^-10 m ³ /m, and an ink line was formed. At this time, the droplet discharge frequency was 4.5 KHz. This line is dried immediately after the formation, and further, by controlling the drying conditions, the conductive material is selectively accumulated at the ends by drying, and as a result, the respective ink lines are separated by 140 μm. 2 parallel lines.

接著，停止基材之搬送，並作一定量之回送，之後，如同圖12(b)中所示一般，一面再度在基材搬送方向上搬送基材，一面使噴頭陣列61從相反側起而朝向左方向掃描，並與第1印刷工程同樣的射出導電性墨水，而形成了由朝向與第1印刷工程相反方向作了傾斜的斜線所成之條帶(第2印刷工程)。 Then, the substrate is stopped and conveyed in a certain amount, and then, as shown in FIG. 12(b), the substrate is conveyed again in the direction in which the substrate is conveyed, and the head array 61 is moved from the opposite side. Scanning is performed in the left direction, and the conductive ink is emitted in the same manner as in the first printing process, and a strip formed by oblique lines inclined in the opposite direction to the first printing process is formed (second printing process).

接著，在乾燥區域8中進行5分鐘之70℃的送風乾燥，而使其乾燥，並形成了第1層。其結果，第1層係成為由斜線所成之格子狀圖案。 Next, air drying was performed at 70 ° C for 5 minutes in the drying zone 8, and it was dried, and the first layer was formed. As a result, the first layer is a lattice pattern formed by oblique lines.

接著，在低電阻化區域9中，將第1層在120℃之烤箱中而作了1小時的加熱。 Next, in the low-resistance region 9, the first layer was heated in an oven at 120 ° C for 1 hour.

參考圖31以及圖32，針對墨水賦予區域和第1層之形成圖案之間的關係作說明。 The relationship between the ink application region and the formation pattern of the first layer will be described with reference to FIGS. 31 and 32.

圖31，係為對於在第1印刷工程以及第2印刷工程中之墨水賦予區域作說明之圖。圖中之斜線部分，係為墨水賦予區域。如同圖示一般，在各印刷工程中而被賦予至基材上的導電性墨水之線段，其之在基材上而作了浸濕擴廣後的線寬幅，係為140μm，將此以280μm之節距來作配置。 FIG. 31 is a view for explaining an ink supply region in the first printing process and the second printing process. The shaded portion in the figure is an ink imparting area. As shown in the figure, the line segment of the conductive ink applied to the substrate in each printing process is wetted and spread on the substrate, and the line width is 140 μm. A pitch of 280 μm is used for configuration.

另一方面，圖32，係為由作為在線段之線寬幅方向兩端處選擇性地堆積導電材料的結果所形成之第1層而成的格子狀圖案。如同圖示一般，藉由在線段之線寬幅方向兩端處選擇性地堆積導電材料，係從1根的線段而產生有2根的相互平行之線(平行線)，並形成有線間隔為140μm之格子狀圖案。 On the other hand, Fig. 32 is a lattice pattern formed by the first layer formed by selectively depositing a conductive material at both ends in the line width direction of the line segment. As shown in the figure, by selectively depositing a conductive material at both ends in the width direction of the line segment, two parallel lines (parallel lines) are generated from one line segment, and a line interval is formed. A grid pattern of 140 μm.

在本發明中，被賦予至基材上之導電性墨水之線段，其之浸濕擴廣後的線寬幅(此線寬幅，係與從1根的線段所產生之2根的互為平行之線(平行線)之間的間隔相對應)，係以成為100~400μm為理想。又，被賦予至基材上的導電性墨水之線段的配置節距，較理想，係被設定為浸濕擴廣後的線寬幅之1.8~2.3倍的範圍內，更理想，係被設定為1.9~2.1倍之範圍內。 In the present invention, the line segment of the conductive ink applied to the substrate is wetted and expanded to have a line width (this line width is the mutual relationship between the two lines from one line segment). The interval between the parallel lines (parallel lines) is preferably 100 to 400 μm. Moreover, it is preferable that the arrangement pitch of the line segment to be applied to the conductive ink on the substrate is set to be in the range of 1.8 to 2.3 times the line width after the wetting and spreading, and more preferably, it is set. It is in the range of 1.9 to 2.1 times.

〈第2層之形成〉 <Formation of the second layer>

接著，將被形成有第1層之基材的區域搬送至第2層 形成區域10處，並藉由電解電鍍裝置來進行了電解銅電鍍。 Next, the area in which the substrate of the first layer is formed is transferred to the second layer The region 10 is formed, and electrolytic copper plating is performed by an electrolytic plating apparatus.

在進行電鍍時，係從導出配線來進行供電，並在下述電鍍浴中而進行了電解電鍍。在陽極處，係連接有電鍍用銅板，並相對於導出配線部以及第1層之細線部分的總面積，而以0.30A/dm²的定電流，來進行通電，直到細線部之膜厚成為目標膜厚的時間為止。線寬幅，係成為表1中所示之值。在通電結束後，進行充分之水洗並使其乾燥。 At the time of electroplating, electric power was supplied from the lead wiring, and electroplating was performed in the following electroplating bath. At the anode, a copper plate for plating is connected, and a constant current of 0.30 A/dm ² is applied to the total area of the lead-out wiring portion and the thin line portion of the first layer, until the film thickness of the thin line portion becomes The target film thickness is up to the time. The line width is the value shown in Table 1. After the end of the energization, sufficient water washing is performed and dried.

〈電鍍浴1〉：電解銅電鍍 <Electroplating bath 1>: Electrolytic copper plating

將五水硫酸銅鹽60g、硫酸19g、1N鹽酸2g、光澤賦予劑(MELTEX公司製「ST901C」)5g，以離子交換水來最終調配為1000ml，以此配方來作了調配。 60 g of copper sulfate pentahydrate, 19 g of sulfuric acid, 2 g of 1N hydrochloric acid, and 5 g of a gloss-imparting agent ("ST901C" manufactured by MELTEX Co., Ltd.) were finally blended into 1000 ml with ion-exchanged water to prepare a formulation.

針對實施例1之導電性圖案，係將第3層之形成省略。 With respect to the conductive pattern of Example 1, the formation of the third layer was omitted.

〈評價方法〉 <Evaluation method>

針對所得到的附導電性圖案基材，進行了以下的評價。 The following evaluation was performed about the obtained electroconductive pattern substrate.

(1)視覺辨認性 (1) Visual recognition

針對被形成於縱橫20cm之區域全面上的導電性圖案，一面改變導電性圖案和眼睛之間的距離，一面基於下 述之評價基準，來對於是否能夠對於形成導電性圖案之格子的線作辨識一事進行了評價。 For the conductive pattern formed on the entire area of 20 cm in the vertical and horizontal directions, while changing the distance between the conductive pattern and the eye, one side is based on the lower side. The evaluation criteria described were evaluated as to whether or not the line forming the lattice of the conductive pattern can be identified.

〈評價基準〉 <Evaluation criteria>

5：就算是5cm時也無法辨識。 5: Even 5cm is not recognized.

4：若是成為10cm則無法辨識。 4: If it is 10cm, it will not be recognized.

3：若是成為15cm則無法辨識。 3: If it is 15cm, it will not be recognized.

2：若是成為20cm則無法辨識。 2: If it is 20cm, it will not be recognized.

1：就算是25cm時也能夠辨識。 1: It can be recognized even when it is 25cm.

(2)薄片電阻 (2) sheet resistance

針對構成導電性圖案之導電性細線部的薄片電阻，藉由4端子4探針法來作了測定。針對進行10點之測定所測定出的平均值，基於下述之評價基準來作了評價。 The sheet resistance of the conductive thin line portion constituting the conductive pattern was measured by a 4-terminal 4-probe method. The average value measured for the measurement of 10 points was evaluated based on the following evaluation criteria.

〈評價基準〉 <Evaluation criteria>

5：係為未滿1.0Ω/□。 5: It is less than 1.0 Ω/□.

4：係為1.0Ω/□以上未滿5.0Ω/□。 4: The system is 1.0 Ω/□ or more and less than 5.0 Ω/□.

3：係為5.0Ω/□以上未滿10.0Ω/□。 3: The system is 5.0 Ω/□ or more and less than 10.0 Ω/□.

2：係為10.0Ω/□以上未滿50.0Ω/□。 2: The system is 10.0 Ω/□ or more and less than 50.0 Ω/□.

1：係為50.0Ω/□以上。 1: The system is 50.0 Ω/□ or more.

(3)密著性 (3) Adhesion

基於膠帶剝離法以及交叉切割(cross cut)法來作了 評價。亦即是，係在附導電性圖案基材上設置25格之切入部(交叉切割)，並對起因於膠帶剝離而產生有膜剝落之格子數作了計測。預先準備3個的附導電性圖案基材，並將3次之試驗中的計測值作平均，而以下述之評價基準來作了評價。 Based on the tape peeling method and the cross cut method Evaluation. In other words, a 25-section cut-in portion (cross-cut) was provided on the conductive pattern substrate, and the number of lattices in which film peeling occurred due to peeling of the tape was measured. Three conductive pattern-attached substrates were prepared in advance, and the measured values in the three tests were averaged, and evaluated based on the following evaluation criteria.

〈評價基準〉 <Evaluation criteria>

5：產生有膜剝落之格子數係為0格。 5: The number of lattices in which film peeling occurred was 0.

4：產生有膜剝落之格子數係為1~2格。 4: The number of lattices in which film peeling occurs is 1 to 2 cells.

3：產生有膜剝落之格子數係為3~5格。 3: The number of lattices with film peeling is 3 to 5 grids.

2：產生有膜剝落之格子數係為6~10格。 2: The number of lattices with film peeling is 6 to 10 grids.

1：產生有膜剝落之格子數係為11~25格。 1: The number of lattices with film peeling is 11 to 25 grids.

(4)彎折耐性 (4) bending tolerance

如同圖33中所示一般，將附導電性圖案基材，在直徑10mm之圓柱上，於以使被形成有導電性圖案之面成為表面側的方式來作了披掛的狀態下，使其往返並作彎折，再對於彎折前後之該導電性圖案的電阻值之降低率作測定，而基於測定值來以下述之評價基準而作了評價。另外，當對於在兩面上具備有導電性圖案之基材而適用該試驗的情況時，係將其中一面作為表面側來披掛在圓柱上並進行同樣的往返，再針對該面之導電性圖案來對於電阻值之降低率作了測定。 As shown in FIG. 33, the conductive pattern substrate is attached to a column having a diameter of 10 mm so as to be draped so that the surface on which the conductive pattern is formed becomes the surface side. Further, the bending rate was measured, and the rate of decrease in the resistance value of the conductive pattern before and after the bending was measured, and the evaluation value was used based on the following evaluation criteria. In addition, when the test is applied to a substrate having a conductive pattern on both surfaces, one of the surfaces is placed on the column as a surface side, and the same round trip is performed, and the conductive pattern of the surface is applied. The rate of decrease in resistance was measured.

〈評價基準〉 <Evaluation criteria>

5：未滿5%。 5: Less than 5%.

4：未滿10%。 4: Less than 10%.

3：未滿20%。 3: Less than 20%.

2：21%~未滿50%。 2:21%~ less than 50%.

1：50%以上。 1:50% or more.

(5)耐久性(熱濕耐久性) (5) Durability (heat and humidity durability)

在85℃、相對濕度85%的環境下，將附導電性圖案基材作了500小時的保存，之後，在使其回到常溫常壓環境下之後，對於電阻值之降低率作測定，而基於測定值來以下述之評價基準而作了評價。 The conductive pattern substrate was stored for 500 hours in an environment of 85 ° C and a relative humidity of 85%, and then, after returning to a normal temperature and normal pressure environment, the rate of decrease in the resistance value was measured. The evaluation was based on the following evaluation criteria based on the measured values.

〈評價基準〉 <Evaluation criteria>

5：未滿5%。 5: Less than 5%.

4：未滿10%。 4: Less than 10%.

3：未滿20%。 3: Less than 20%.

2：21%~未滿50%。 2:21%~ less than 50%.

1：50%以上。 1:50% or more.

將以上之評價結果展示於表1中。 The above evaluation results are shown in Table 1.

(實施例2) (Example 2)

在實施例1中，將形成第1層之墨水1(含有銀奈米粒子之墨水1)替換為墨水2(含有銀奈米粒子之墨水 2)，並進而將電解電鍍條件之電流密度替換為0.50A/dm²，而將第1層以及第2層之膜密度設為了表1之值，除此之外，係與實施例1相同的，而得到了附導電性圖案基材。 In the first embodiment, the ink 1 (ink 1 containing silver nanoparticles) forming the first layer is replaced with the ink 2 (ink 2 containing silver nanoparticles), and the current density of the electrolytic plating conditions is further replaced with A conductive pattern base material was obtained in the same manner as in Example 1 except that the film density of the first layer and the second layer was changed to the value shown in Table 1 except for 0.50 A/dm ² .

針對所得到的附導電性圖案基材，進行了與實施例1相同的評價，並將結果展示於表1中。 The same evaluation as in Example 1 was carried out for the obtained conductive pattern substrate, and the results are shown in Table 1.

(實施例3) (Example 3)

在實施例1中，將形成第1層之墨水1(含有銀奈米粒子之墨水1)替換為墨水3(含有銅奈米粒子之墨水)，並進而將在低電阻化區域9處之低電阻化處理，設為在還原氛圍中之180℃下的加熱處理，而作成了表1之層積構造，除此之外，係與實施例1相同的，而得到了附導電性圖案基材。 In the first embodiment, the ink 1 (ink 1 containing silver nanoparticles) forming the first layer is replaced with the ink 3 (ink containing copper nanoparticles), and further low at the low-resistance region 9. The resistive treatment was carried out in the same manner as in Example 1 except that the heat treatment at 180 ° C in a reducing atmosphere was carried out, and a conductive pattern substrate was obtained. .

針對所得到的附導電性圖案基材，進行了與實施例1相同的評價，並將結果展示於表1中。 The same evaluation as in Example 1 was carried out for the obtained conductive pattern substrate, and the results are shown in Table 1.

(實施例4) (Example 4)

在實施例1中，將形成第1層之墨水1(含有銀奈米粒子之墨水1)替換為墨水4(含有銀粉之墨水)，並將此藉由柔版印刷(flexography)法來賦予至基材上，而作成了表1之層積構造，除此之外，係與實施例1相同的，而得到了附導電性圖案基材。 In the first embodiment, the ink 1 (ink 1 containing silver nanoparticles) forming the first layer is replaced with the ink 4 (ink containing silver powder), and this is imparted by the flexography method. A conductive pattern substrate was obtained in the same manner as in Example 1 except that the laminate structure of Table 1 was obtained.

針對所得到的附導電性圖案基材，進行了與 實施例1相同的評價，並將結果展示於表1中。 With respect to the obtained conductive pattern substrate, The same evaluation as in Example 1 was carried out, and the results are shown in Table 1.

(實施例5) (Example 5)

在實施例1中，將第2層藉由下述之方法來形成，除此之外，係與實施例1相同的，而得到了附導電性圖案基材。 In the first embodiment, the second layer was formed by the following method, and a conductive pattern substrate was obtained in the same manner as in the first embodiment.

〈第2層之形成〉 <Formation of the second layer>

對於被形成有第1層之基材，使用下述之電鍍浴2，來進行了電解銀電鍍。 Electrolytic silver plating was performed on the substrate on which the first layer was formed by using the plating bath 2 described below.

在進行電鍍時，係從導出配線來進行供電，並在下述電鍍浴中而進行了電解銀電鍍。在陽極處，係連接有電鍍用銀板，並相對於導出配線部以及第1層之細線部分的總面積，而以0.30A/dm²的定電流，來進行通電，直到細線部之膜厚成為目標膜厚的時間為止。線寬幅，係成為表1中所示之值。在通電結束後，進行充分之水洗並使其乾燥。 At the time of electroplating, electric power was supplied from the lead wiring, and electrolytic silver plating was performed in the following electroplating bath. At the anode, a silver plate for plating is connected, and a constant current of 0.30 A/dm ² is applied to the total area of the lead-out wiring portion and the thin line portion of the first layer, until the film thickness of the thin line portion is formed. Until the target film thickness is reached. The line width is the value shown in Table 1. After the end of the energization, sufficient water washing is performed and dried.

〈電鍍浴2〉：電解銀電鍍 <Electroplating Bath 2>: Electrolytic Silver Plating

將氰化銀35g、氰化鉀80g、碳酸鉀10g，以離子交換水來最終調配為1000ml，以此配方來作了調配。 35 g of silver cyanide, 80 g of potassium cyanide, and 10 g of potassium carbonate were finally formulated into 1000 ml with ion-exchanged water, and the formulation was formulated.

針對所得到的附導電性圖案基材，進行了與實施例1相同的評價，並將結果展示於表1中。 The same evaluation as in Example 1 was carried out for the obtained conductive pattern substrate, and the results are shown in Table 1.

(實施例6) (Example 6)

在實施例1中，將基材3替換為基材1，除此之外，係與實施例1相同的，而得到了附導電性圖案基材。 In the same manner as in Example 1, except that the substrate 3 was replaced with the substrate 1 in the first embodiment, a conductive pattern substrate was obtained.

針對所得到的附導電性圖案基材，進行了與實施例1相同的評價，並將結果展示於表1中。 The same evaluation as in Example 1 was carried out for the obtained conductive pattern substrate, and the results are shown in Table 1.

(實施例7) (Example 7)

在實施例1中，將基材3替換為基材2，除此之外，係與實施例1相同的，而得到了附導電性圖案基材。 In the same manner as in Example 1, except that the substrate 3 was replaced with the substrate 2, a conductive pattern substrate was obtained.

針對所得到的附導電性圖案基材，進行了與實施例1相同的評價，並將結果展示於表1中。 The same evaluation as in Example 1 was carried out for the obtained conductive pattern substrate, and the results are shown in Table 1.

(實施例8) (Example 8)

在實施例1中，將基材3替換為基材4，除此之外，係與實施例1相同的，而得到了附導電性圖案基材。 In the same manner as in Example 1, except that the substrate 3 was replaced with the substrate 4, a conductive pattern substrate was obtained.

針對所得到的附導電性圖案基材，進行了與實施例1相同的評價，並將結果展示於表1中。 The same evaluation as in Example 1 was carried out for the obtained conductive pattern substrate, and the results are shown in Table 1.

(實施例9) (Example 9)

在實施例1中，在第2層之與第1層相反側處，更進而藉由下述之方法來形成第3層，而設為表1之層積構造，除此之外，係與實施例1相同的，而得到了附導電性圖案基材。 In the first embodiment, the third layer is formed on the opposite side of the second layer from the first layer, and the third layer is formed by the following method, and the layered structure of Table 1 is used. In the same manner as in Example 1, a conductive pattern substrate was obtained.

〈第3層之形成〉 <Formation of the third layer>

對於被形成有第2層之基材，使用下述之電鍍浴2，來進行了電解鎳電鍍。 Electrolytic nickel plating was performed on the substrate on which the second layer was formed by using the plating bath 2 described below.

在進行電鍍時，係從導出配線來進行供電，並在下述電鍍浴3中而進行了電解電鍍。在陽極處，係連接有電鍍用鎳板，並相對於導出配線部以及第1層之細線部分的總面積，而以0.05A/dm²的定電流，來進行通電，直到細線部之膜厚成為表1中所示之目標膜厚的時間為止。線寬幅，係成為表1中所示之值。在通電結束後，進行充分之水洗並使其乾燥。 At the time of electroplating, electric power was supplied from the lead wiring, and electrolytic plating was performed in the electroplating bath 3 mentioned later. At the anode, a nickel plate for electroplating is connected, and a constant current of 0.05 A/dm ² is applied to the total area of the lead-out wiring portion and the thin line portion of the first layer, until the film thickness of the thin portion is increased. It becomes the time of the target film thickness shown in Table 1. The line width is the value shown in Table 1. After the end of the energization, sufficient water washing is performed and dried.

〈電鍍浴3〉：電解鎳電鍍 <Electroplating Bath 3>: Electrolytic Nickel Plating

將硫酸鎳240g、氯化鎳45g、硼酸30g，以離子交換水來最終調配為1000ml，以此配方來作了調配。 240 g of nickel sulfate, 45 g of nickel chloride, and 30 g of boric acid were finally formulated into 1000 ml with ion-exchanged water, and the formulation was formulated.

針對所得到的附導電性圖案基材，進行了與實施例1相同的評價，並將結果展示於表1中。 The same evaluation as in Example 1 was carried out for the obtained conductive pattern substrate, and the results are shown in Table 1.

(實施例10) (Embodiment 10)

在實施例1中，在第2層之與第1層相反側處，更進而藉由下述之方法來形成第3層，而設為表1之層積構造，除此之外，係與實施例1相同的，而得到了附導電性圖案基材。 In the first embodiment, the third layer is formed on the opposite side of the second layer from the first layer, and the third layer is formed by the following method, and the layered structure of Table 1 is used. In the same manner as in Example 1, a conductive pattern substrate was obtained.

〈第3層之形成〉 <Formation of the third layer>

對於被形成有第2層之基材，使用下述之電鍍浴4，來進行了無電解鎳電鍍。 Electroless nickel plating was performed on the substrate on which the second layer was formed by using the plating bath 4 described below.

無電解電鍍時間，係進行至直到成為表1中所示之特定之膜厚為止。線寬幅，係成為表1中所示之值。 The electroless plating time was carried out until it became the specific film thickness shown in Table 1. The line width is the value shown in Table 1.

〈電鍍浴4〉：無電解鎳電鍍 <Electroplating Bath 4>: Electroless Nickel Plating

將硫酸鎳26g、檸檬酸鈉60g、次亞磷酸鈉21g、硫酸銨，以離子交換水來最終調配為1000ml，以此配方來作了調配。電鍍浴溫度係設為90℃。 Formulation was carried out by formulating 26 g of nickel sulfate, 60 g of sodium citrate, 21 g of sodium hypophosphite, and ammonium sulfate, and finally dissolving it into 1000 ml with ion-exchanged water. The plating bath temperature was set to 90 °C.

針對所得到的附導電性圖案基材，進行了與實施例1相同的評價，並將結果展示於表1中。 The same evaluation as in Example 1 was carried out for the obtained conductive pattern substrate, and the results are shown in Table 1.

(實施例11) (Example 11)

在實施例1中，在第2層之與第1層相反側處，更進而藉由下述之方法來形成第3層，而設為表1之層積構造，除此之外，係與實施例1相同的，而得到了附導電性圖案基材。 In the first embodiment, the third layer is formed on the opposite side of the second layer from the first layer, and the third layer is formed by the following method, and the layered structure of Table 1 is used. In the same manner as in Example 1, a conductive pattern substrate was obtained.

〈第3層之形成〉 <Formation of the third layer>

對於被形成有第2層之基材，而在使用有由炭黑和水溶性電著樹脂所成之混合物的浴中，藉由定法來進行電著塗裝，而形成了具備有表1中所示之膜厚以及線寬幅的由有機膜所成之第3層。 In the bath in which the second layer is formed, and in the bath in which the mixture of carbon black and the water-soluble electro-resist resin is used, the electrocoating is carried out by a predetermined method, and is formed in Table 1. The film thickness shown and the third layer of the line width formed by the organic film.

針對所得到的附導電性圖案基材，進行了與實施例1相同的評價，並將結果展示於表1中。但是，實施例7，由於在第3層處係使用有機膜，因此，係並不進行薄片電阻之測定，而對於並未設置有機膜的端部間之端子間電阻作了測定。其結果，係確認到：其係與另外所作了測定的在實施例1中之端部間之端子間電阻實質性為同一之值。 The same evaluation as in Example 1 was carried out for the obtained conductive pattern substrate, and the results are shown in Table 1. However, in Example 7, since the organic film was used in the third layer, the sheet resistance was not measured, and the inter-terminal resistance between the ends where the organic film was not provided was measured. As a result, it was confirmed that the resistance between the terminals between the ends of the first embodiment and the other portions measured in the first embodiment was substantially the same.

(比較例1) (Comparative Example 1)

在實施例1中，在調整為40℃之基材上，以會成為4×10^-10m³/m的方式，來對於墨水吐出量作調整並形成墨線，而作成了表1之層積構造，除此之外，係與實施例1相同的，而得到了附導電性圖案基材。 In the first embodiment, on the substrate adjusted to 40 ° C, the ink discharge amount was adjusted and the ink line was formed so as to be 4 × 10 ^-10 m ³ /m, and the laminate of Table 1 was prepared. In the same manner as in Example 1, except that the structure was attached, a conductive pattern substrate was obtained.

針對所得到的附導電性圖案基材，進行了與實施例1相同的評價，並將結果展示於表1中。 The same evaluation as in Example 1 was carried out for the obtained conductive pattern substrate, and the results are shown in Table 1.

〈評價〉 <Evaluation>

根據表1，可以得知，本發明之實施例1~11之導電性圖案以及具備有該導電性圖案之基材(附導電性圖案基材)，係能夠使導電性細線之視覺辨認性降低、並能夠使電阻值降低、且能夠使基材和導電性圖案之接著性(密著性)提升、並且就算是在基材之彎折時也能夠抑制電阻值之變動、且更進而能更賦予耐熱耐濕性等之耐久性。 According to Table 1, it can be seen that the conductive patterns of Examples 1 to 11 of the present invention and the substrate (the conductive pattern substrate) having the conductive pattern can reduce the visibility of the conductive thin wires. Moreover, the resistance value can be lowered, and the adhesion (adhesiveness) between the substrate and the conductive pattern can be improved, and even when the substrate is bent, the variation of the resistance value can be suppressed, and further, the resistance can be further improved. It imparts durability such as heat resistance and moisture resistance.

根據實施例1和實施例2之對比，可以得知，係以相較於第1層之膜密度而第2層之膜密度為更高的實施例1之情況時，在密著性以及彎折耐性上係更為優良。 According to the comparison between Example 1 and Example 2, it can be seen that in the case of Example 1 in which the film density of the second layer is higher than the film density of the first layer, in the case of adhesion and bending The tolerance is better.

在使用有銀粉的實施例4中，相較於使用有銀奈米墨水之實施例1，在發揮本發明之效果一事上而言係為較差，但是，由於係使用有銀，因此，相較於使用例如在低電阻化中係需要進行還原處理的鈀等之情況，係能夠將低電阻化處理之負擔(處理時間等)大幅度的降低。 In Example 4 in which silver powder was used, compared with Example 1 using silver nano ink, it was inferior in exerting the effects of the present invention, but since silver was used, it was compared. For example, in the case of using palladium or the like which is required to be subjected to a reduction treatment in the case of reducing the resistance, it is possible to greatly reduce the burden of the resistance reduction treatment (processing time, etc.).

根據實施例1和實施例5之對比，可以得知，在第2層為以銅作為主成分的實施例1中，在密著性以及彎折耐性上係更為優良。 According to the comparison between Example 1 and Example 5, in Example 1 in which the second layer was made of copper as a main component, it was found to be more excellent in adhesion and bending resistance.

根據基材互為相異之實施例1、6、7以及8的對比，可以得知，藉由將基材之表面能設為50mN/m以上，係能夠使導電性細線之視覺辨認性更進一步降低，並能夠使密著性以及彎折耐性更進一步提昇。 According to the comparison of Examples 1, 6, 7, and 8 in which the substrates are different from each other, it is understood that the visibility of the conductive thin wires can be made more by setting the surface energy of the substrate to 50 mN/m or more. Further reduction, and can further improve the adhesion and bending tolerance.

設置有第3層之實施例9、10以及11，相較於並未設置第3層之實施例1，可以得知，在耐熱濕性上係更為優良。 Examples 9, 10, and 11 in which the third layer was provided were found to be more excellent in heat-resistant wetness than in Example 1 in which the third layer was not provided.

另一方面，可以得知，在導電性細線之線寬幅為10μm以上的比較例1中，係並無法使導電性細線之視覺辨認性充分地降低，又，在密著性、彎折耐性、耐熱濕性上亦為較差。 On the other hand, in Comparative Example 1 in which the line width of the conductive thin wires is 10 μm or more, the visibility of the conductive thin wires cannot be sufficiently lowered, and the adhesion and the bending resistance are further improved. It is also poor in heat and moisture resistance.

(實施例12) (Embodiment 12)

藉由以下之方法，來形成了與圖24(a)中所示者相同之導電性圖案。 The same conductivity pattern as that shown in Fig. 24 (a) was formed by the following method.

〈墨水6之調製〉 <Modulation of Ink 6>

調製了由下述組成所成之墨水6。 The ink 6 composed of the following composition was prepared.

‧銀奈米粒子之水分散液1(銀奈米粒子：40重量%)：1.75重量% ‧ Silver nanoparticle aqueous dispersion 1 (silver nanoparticle: 40% by weight): 1.75 wt%

‧矽系界面活性劑(BYK公司製「BYK-348」)：0.01重量% ‧矽 surfactant (BYK-348 by BYK): 0.01% by weight

‧純水：殘部 ‧Pure water: Residue

〈墨水7之調製〉 <Modulation of Ink 7>

調製了由下述組成所成之墨水7。 An ink 7 composed of the following composition was prepared.

‧銀奈米粒子之水分散液1(銀奈米粒子：40重量%)：80重量% ‧ Silver nanoparticle particle dispersion 1 (silver nanoparticle: 40% by weight): 80% by weight

‧矽系界面活性劑(BYK公司製「BYK-348」)：0.01重量% ‧矽 surfactant (BYK-348 by BYK): 0.01% by weight

‧純水：殘部 ‧Pure water: Residue

〈基材之調製〉 <Modulation of substrate>

作為基材1，係使用藉由易接著加工(表面處理)而將表面能設為52mN/m之PET基材。 As the substrate 1, a PET substrate having a surface energy of 52 mN/m by easy processing (surface treatment) was used.

〈網格狀圖案之形成〉 <Formation of grid pattern>

使用安裝有KONICA MINOLTA公司製之噴墨頭「512LHX」(標準液滴容量42pL)之XY機器人(MUSASHI ENGINEERING公司製「SHOTMASTER300」)、和噴墨控制系統(KONICA MINOLTA公司製「IJCS-1」)，而將墨水6以會成為噴嘴列方向間節距282μm、掃描方向間節距45μm的方式來作為液滴而依序吐出至基材1上，並藉由使在基材上而於掃描方向上連續性地作了賦予的液滴合併為一，來形成了複數之線狀液體102。另外，在一面進行印刷一面將載置有基材之平台加熱至70℃而使此些之線狀液體102乾燥的過程中，藉由使固形量堆積在周邊部處，而從1根的線狀液體來形成了由包含有導電材料(於此情況，係為銀奈米粒子)之2根的線段131、132所構成之第1平行線圖案103。 XY robot ("SHOTMASTER300" manufactured by MUSASHI ENGINEERING Co., Ltd.) and inkjet control system ("IJCS-1" manufactured by KONICA MINOLTA Co., Ltd.) equipped with an inkjet head "512LHX" (standard droplet capacity 42pL) manufactured by KONICA MINOLTA Co., Ltd. The ink 6 is sequentially discharged as a droplet onto the substrate 1 so as to have a pitch of 282 μm between the nozzle row directions and a pitch of 45 μm between the scanning directions, and is scanned in the substrate by being placed on the substrate. The droplets which have been continuously applied are combined into one to form a plurality of linear liquids 102. Further, in the process of heating the linear substrate 102 by heating the stage on which the substrate is placed to 70 ° C while printing, the solid amount is deposited at the peripheral portion, and the line is removed from one line. The first parallel line pattern 103 composed of two line segments 131 and 132 including a conductive material (in this case, silver nanoparticle) is formed as a liquid.

之後，使基材作90°之旋轉，並在與第1平行線圖案相正交之方向上，藉由與上述相同之方法來塗布由 墨水6所成之第2線狀液體，並使其乾燥，而形成了第2平行線圖案。 Thereafter, the substrate is rotated by 90° and coated in the same direction as the first parallel line pattern by the same method as described above. The second linear liquid formed by the ink 6 is dried to form a second parallel line pattern.

亦即是，係藉由與上述相同之方法，來在前述基材1上以會與前述第1平行線圖案103作90°之交叉的方式來塗布由墨水6所成之第2線狀液體104，並在使該第2線狀液體104乾燥的過程中，使該導電材料(於此情況，係為銀奈米粒子)選擇性地堆積在緣部處，而形成了由包含有該導電材料之2根的線段151、152所構成之第2平行線圖案105。 In other words, the second linear liquid formed of the ink 6 is applied to the substrate 1 so as to intersect the first parallel line pattern 103 by 90° in the same manner as described above. 104, and in the process of drying the second linear liquid 104, the conductive material (in this case, silver nanoparticle) is selectively deposited at the edge portion, and is formed to contain the conductive The second parallel line pattern 105 composed of two line segments 151 and 152 of the material.

此時，第1平行線圖案103之形成方向，係與長方形狀之基材1的短邊相平行，第2平行線圖案105之形成方向，係與長方形狀之基材1的長邊相平行。 At this time, the direction in which the first parallel line pattern 103 is formed is parallel to the short side of the rectangular substrate 1, and the direction in which the second parallel line pattern 105 is formed is parallel to the long side of the rectangular substrate 1. .

如同上述一般，而形成了使第1平行線圖案103和第2平行線圖案105相互交叉之網格狀圖案106。 As described above, a grid pattern 106 in which the first parallel line pattern 103 and the second parallel line pattern 105 intersect each other is formed.

〈平塗圖案之形成〉 <Formation of flat pattern>

使用安裝有KONICA MINOLTA公司製之噴墨頭「512LHX」(標準液滴容量42pL)之XY機器人(MUSASHI ENGINEERING公司製「SHOTMASTER300」)、和噴墨控制系統(KONICA MINOLTA公司製「IJCS-1」)，而在基材1上將墨水7以會成為濕潤膜厚20μm的方式來調整液滴量並作賦予，再使其乾燥，藉由此，而以與前述網格狀圖案106之周緣的全周相重疊的方式來形成了平塗圖案207。 XY robot ("SHOTMASTER300" manufactured by MUSASHI ENGINEERING Co., Ltd.) and inkjet control system ("IJCS-1" manufactured by KONICA MINOLTA Co., Ltd.) equipped with an inkjet head "512LHX" (standard droplet capacity 42pL) manufactured by KONICA MINOLTA Co., Ltd. On the substrate 1, the ink 7 is adjusted so as to have a wet film thickness of 20 μm, and the amount of liquid droplets is adjusted and dried, whereby the entire periphery of the mesh pattern 106 is formed. The flat pattern 207 is formed by overlapping the phases.

(實施例13) (Example 13)

藉由以下之方法，來形成了與圖24(b)中所示者相同之導電性圖案。 The same conductivity pattern as that shown in Fig. 24(b) was formed by the following method.

〈網格狀圖案之形成〉 <Formation of grid pattern>

與實施例12相同的，而形成了網格狀圖案106。 The mesh pattern 106 is formed in the same manner as in the embodiment 12.

〈平塗圖案之形成〉 <Formation of flat pattern>

使用安裝有KONICA MINOLTA公司製之噴墨頭「512LHX」(標準液滴容量42pL)之XY機器人(MUSASHI ENGINEERING公司製「SHOTMASTER300」)、和噴墨控制系統(KONICA MINOLTA公司製「IJCS-1」)，而在基材1上將墨水7以會成為濕潤膜厚20μm的方式來調整液滴量並作賦予，再使其乾燥，藉由此，而以與前述網格狀圖案106之周緣的其中一側以及和該其中一側相對向之另外一側相重疊的方式來形成了2個的平塗圖案207。 XY robot ("SHOTMASTER300" manufactured by MUSASHI ENGINEERING Co., Ltd.) and inkjet control system ("IJCS-1" manufactured by KONICA MINOLTA Co., Ltd.) equipped with an inkjet head "512LHX" (standard droplet capacity 42pL) manufactured by KONICA MINOLTA Co., Ltd. On the substrate 1, the ink 7 is adjusted so as to have a wet film thickness of 20 μm, and is supplied and dried, whereby the periphery of the mesh pattern 106 is formed. Two flat patterns 207 are formed in such a manner that one side and the other side of the one side overlap.

具體而言，係以與作為全體而被形成為方形狀之網格狀圖案106的相互對向之2個長邊的各者相重疊的方式，而形成有2個的平塗圖案207。 Specifically, two flat patterns 207 are formed so as to overlap each of the two long sides of the grid-like pattern 106 formed as a square shape as a whole.

(實施例14) (Example 14)

藉由以下之方法，來形成了與圖25(a)中所示者相 同之導電性圖案。 By the following method, the formation is as shown in Fig. 25(a). The same conductive pattern.

〈網格狀圖案之形成〉 <Formation of grid pattern>

在實施例12相同的，使平行線圖案103、105之形成方向作了45°的傾斜，除此之外，係與實施例12相同的，而形成了網格狀圖案106。 In the same manner as in the twelfth embodiment, the grid pattern 106 was formed in the same manner as in the embodiment 12 except that the direction in which the parallel line patterns 103 and 105 were formed was inclined by 45°.

〈平塗圖案之形成〉 <Formation of flat pattern>

與實施例12相同的，而形成了平塗圖案207。 The same as in Example 12, a flat coating pattern 207 was formed.

(實施例15) (Example 15)

藉由以下之方法，來形成了與圖24(b)中所示者相同之導電性圖案。 The same conductivity pattern as that shown in Fig. 24(b) was formed by the following method.

〈網格狀圖案之形成〉 <Formation of grid pattern>

與實施例14相同的，而形成了網格狀圖案106。 The mesh pattern 106 is formed in the same manner as in the fourteenth embodiment.

〈平塗圖案之形成〉 <Formation of flat pattern>

與實施例13相同的，而形成了平塗圖案207。 The flat coating pattern 207 was formed in the same manner as in the thirteenth embodiment.

(實施例16) (Embodiment 16)

藉由以下之方法，來形成了與圖26(b)中所示者相同之導電性圖案。 The same conductivity pattern as that shown in Fig. 26(b) was formed by the following method.

〈網格狀圖案之形成〉 <Formation of grid pattern>

與實施例14相同的，而形成了網格狀圖案106。 The mesh pattern 106 is formed in the same manner as in the fourteenth embodiment.

〈平塗圖案之形成〉 <Formation of flat pattern>

使用安裝有KONICA MINOLTA公司製之噴墨頭「512LHX」(標準液滴容量42pL)之XY機器人(MUSASHI ENGINEERING公司製「SHOTMASTER300」)、和噴墨控制系統(KONICA MINOLTA公司製「IJCS-1」)，而在基材1上將墨水7以會成為濕潤膜厚20μm的方式來調整液滴量並作賦予，再使其乾燥，藉由此，而以與網格狀圖案106之周緣的其中一側相重疊的方式來形成了平塗圖案207。 XY robot ("SHOTMASTER300" manufactured by MUSASHI ENGINEERING Co., Ltd.) and inkjet control system ("IJCS-1" manufactured by KONICA MINOLTA Co., Ltd.) equipped with an inkjet head "512LHX" (standard droplet capacity 42pL) manufactured by KONICA MINOLTA Co., Ltd. On the substrate 1, the ink 7 is adjusted so as to have a wet film thickness of 20 μm, and the amount of liquid droplets is adjusted and dried, whereby one of the peripheral edges of the grid pattern 106 is formed. The flat coating pattern 207 is formed by overlapping the sides.

具體而言，係以與作為全體而被形成為方形狀之網格狀圖案106的其中1邊相重疊的方式，而形成有平塗圖案207。 Specifically, the flat coating pattern 207 is formed so as to overlap one of the sides of the grid-like pattern 106 formed into a square shape as a whole.

〈網格狀圖案之圖案化〉 <Patterning of Grid Patterns>

使用雷射法，來將構成網格狀圖案106之導電材料作部分性的除去，藉由此，來將該網格狀圖案106分割成複數之帶狀單元。帶寬幅(相當於當將1個的帶狀之單元視為長方形狀時的短邊之長度)係設為5mm，帶間之間隔係設為0.05mm。雷射，係使用光纖雷射，輸出係設為10W而作使用。 The conductive material constituting the grid pattern 106 is partially removed by a laser method, whereby the grid pattern 106 is divided into a plurality of strip units. The bandwidth width (corresponding to the length of the short side when one strip-shaped unit is regarded as a rectangular shape) is set to 5 mm, and the interval between the strips is set to 0.05 mm. The laser uses a fiber laser and the output system is set to 10W for use.

〈平塗圖案之圖案化〉 <Patterning of Flat Patterns>

使用雷射法，來將構成平塗圖案207之導電材料作部分性的除去，藉由此，來將該平塗圖案207分割成分別能夠作為導出配線而起作用的複數之細線208。將L/S設為了20μm/20μm。雷射，係使用光纖雷射，輸出係設為10W而作使用。 The conductive material constituting the flat pattern 207 is partially removed by a laser method, whereby the flat pattern 207 is divided into a plurality of thin lines 208 which can function as lead wires. The L/S was set to 20 μm / 20 μm. The laser uses a fiber laser and the output system is set to 10W for use.

(實施例17) (Example 17)

藉由以下之方法，來形成了與圖26(b)中所示者相同之導電性圖案。 The same conductivity pattern as that shown in Fig. 26(b) was formed by the following method.

〈網格狀圖案之形成〉 <Formation of grid pattern>

與實施例16相同的，而形成了網格狀圖案。 The grid pattern was formed in the same manner as in the sixteenth embodiment.

〈平塗圖案之形成〉 <Formation of flat pattern>

與實施例16相同的，而形成了平塗圖案。 The same as in Example 16, a flat coating pattern was formed.

〈網格狀圖案之圖案化〉 <Patterning of Grid Patterns>

在實施例16中，代替雷射法，係使用了光微影法，除此之外，係與實施例16相同的，而對於網格狀圖案進行圖案化，並分割成了複數之單元。 In the sixteenth embodiment, the photolithography method is used instead of the laser method, and the grid pattern is patterned and divided into a plurality of units in the same manner as in the sixteenth embodiment.

〈平塗圖案之圖案化〉 <Patterning of Flat Patterns>

在實施例16中，代替雷射法，係使用了光微影法， 除此之外，係與實施例16相同的，而對於平塗圖案進行圖案化，並分割成了複數之細線208。 In the embodiment 16, instead of the laser method, the light lithography method is used. Otherwise, the same pattern as in the embodiment 16 was used, and the flat pattern was patterned and divided into a plurality of fine lines 208.

(實施例18) (Embodiment 18)

藉由以下之方法，來形成了與圖27(b)中所示者相同之導電性圖案。 The same conductivity pattern as that shown in Fig. 27 (b) was formed by the following method.

〈網格狀圖案之形成〉 <Formation of grid pattern>

在實施例16中，使用噴墨法，來在與於實施例16中之圖案化後的網格狀圖案106之形成區域(複數之帶狀之區域)相對應的區域處，賦予包含導電材料之液滴，而形成了藉由複數之帶狀之單元所構成的網格狀圖案106。帶寬幅(相當於當將1個的帶狀之單元視為長方形狀時的短邊之長度)係設為5mm，帶間之間隔係設為0.05mm。 In the embodiment 16, an ink-jet method is used to impart a conductive material at a region corresponding to the formation region (a plurality of strip-shaped regions) of the patterned grid-like pattern 106 in the embodiment 16. The droplets form a grid pattern 106 composed of a plurality of strip-shaped cells. The bandwidth width (corresponding to the length of the short side when one strip-shaped unit is regarded as a rectangular shape) is set to 5 mm, and the interval between the strips is set to 0.05 mm.

〈平塗圖案之形成〉 <Formation of flat pattern>

與實施例16相同的，而形成了平塗圖案。 The same as in Example 16, a flat coating pattern was formed.

〈網格狀圖案之圖案化〉 <Patterning of Grid Patterns>

如同上述一般，網格狀圖案106，係藉由噴墨法而預先被作了圖案化。 As described above, the grid pattern 106 is previously patterned by an inkjet method.

〈平塗圖案之圖案化〉 <Patterning of Flat Patterns>

與實施例16相同的，而對於平塗圖案207進行圖案 化，並分割成複數之細線208。 Same as in the embodiment 16, but patterning the flat pattern 207 And divided into a plurality of thin lines 208.

(實施例19) (Embodiment 19)

藉由以下之方法，來形成了與圖27(b)中所示者相同之導電性圖案。 The same conductivity pattern as that shown in Fig. 27 (b) was formed by the following method.

〈網格狀圖案之形成〉 <Formation of grid pattern>

與實施例18相同的，而形成了網格狀圖案106。 The grid pattern 106 was formed in the same manner as in the eighteenth embodiment.

〈平塗圖案之形成〉 <Formation of flat pattern>

與實施例18相同的，而形成了平塗圖案207。 The same as in Example 18, a flat coating pattern 207 was formed.

〈網格狀圖案之圖案化〉 <Patterning of Grid Patterns>

與實施例18相同的，網格狀圖案106，係藉由噴墨法而預先被作了圖案化。 In the same manner as in the embodiment 18, the grid pattern 106 was previously patterned by an inkjet method.

〈平塗圖案之圖案化〉 <Patterning of Flat Patterns>

與實施例17相同的，而對於平塗圖案207進行圖案化，並分割成複數之細線208。 The same as in the embodiment 17, the flat pattern 207 is patterned and divided into a plurality of fine lines 208.

將在實施例12~19中所使用的導電性圖案之形成方法，在表2中作了統整。表2中，「IJ」，係為噴墨之略記。 The method of forming the conductive patterns used in Examples 12 to 19 was unified in Table 2. In Table 2, "IJ" is a sketch of inkjet.

〈評價〉 <Evaluation>

藉由實施例12~19所得到的導電性圖案，係確認到了：能夠將起因於在網格狀圖案之端部處的導電材料之濃度的參差所導致之問題減輕。 According to the conductive patterns obtained in Examples 12 to 19, it was confirmed that the problem caused by the variation in the concentration of the conductive material at the end portion of the mesh pattern can be alleviated.

又，如同實施例16~19一般，係確認到：藉由將平塗圖案作分割並形成複數之細線，係能夠形成適於達成省空間化之導出配線。 Further, as in the case of Examples 16 to 19, it was confirmed that by dividing the planer pattern into a plurality of thin lines, it is possible to form a lead-out wiring suitable for achieving space saving.

(實施例20) (Embodiment 20) 1.墨水之調製 1. Modulation of ink

調製了由下述組成所成之墨水8。 An ink 8 composed of the following composition was prepared.

‧銀奈米粒子之水分散液1(銀奈米粒子：40重量%)：1.75重量% ‧ Silver nanoparticle aqueous dispersion 1 (silver nanoparticle: 40% by weight): 1.75 wt%

‧矽系界面活性劑(BYK公司製「BYK-348」)：0.01重量% ‧矽 surfactant (BYK-348 by BYK): 0.01% by weight

‧純水：殘部 ‧Pure water: Residue

2.基材之調製 2. Modulation of the substrate

作為基材，係使用藉由易接著加工(表面處理)而將表面能E設為52mN/m之由PET基材所成之基材5。 As the substrate, a substrate 5 made of a PET substrate having a surface energy E of 52 mN/m by easy processing (surface treatment) was used.

3.表面能以及接觸角之測定 3. Determination of surface energy and contact angle

在形成網格狀之導電性圖案之前，針對藉由墨水8所 形成的第1平行線圖案之形成區域內之表面能以及第2線狀液體之接觸角，藉由代用之方法來進行了測定。 Before forming a grid-like conductive pattern, The surface energy in the formation region of the formed first parallel line pattern and the contact angle of the second linear liquid were measured by a substitute method.

(1)表面能之測定 (1) Determination of surface energy

在基材5上，將墨水8滴下20μL，並使其乾燥，而在液滴之周圍形成了由咖啡漬現象所致之環狀細線。之後，對於此環狀細線之內部的中心區域，測定水、碳酸丙烯、二碘甲烷之接觸角，並依據Young-Fowkes式，來算出了表面能。於此，水、碳酸丙烯、二碘甲烷之接觸角之測定，係使用協和界面化學公司製之接觸角測定裝置DM-501來進行(在以下所說明之接觸角的測定中，亦係使用同一裝置)。所算出的表面能之值，係為56mN/m。將此值作為第1平行線圖案之形成區域內的表面能C。 On the substrate 5, 20 μL of the ink 8 was dropped and dried, and a ring-shaped fine line due to the phenomenon of coffee stain was formed around the liquid droplets. Thereafter, the contact angles of water, propylene carbonate, and diiodomethane were measured for the central region inside the annular thin wire, and the surface energy was calculated according to the Young-Fowkes formula. Here, the measurement of the contact angle of water, propylene carbonate, and diiodomethane was carried out using a contact angle measuring apparatus DM-501 manufactured by Kyowa Interface Chemical Co., Ltd. (in the measurement of the contact angle described below, the same is used. Device). The calculated surface energy value was 56 mN/m. This value is taken as the surface energy C in the formation region of the first parallel line pattern.

(2)第2線狀液體之接觸角之測定 (2) Determination of the contact angle of the second linear liquid A.在第1平行線圖案之形成區域內的第2線狀液體之接觸角之測定 A. Measurement of the contact angle of the second linear liquid in the formation region of the first parallel line pattern

在相對於墨水8之接觸角係成為22°的進行有易接著加工之聚對苯二甲酸乙二酯(PET)基材上，將墨水8滴下20μL，並使其乾燥，而在液滴之周圍形成了由咖啡漬現象所致之環狀細線。之後，對於此環狀細線之內部的中心區域，測定墨水8(與第2線狀液體相同組成)之接觸角。所測定出之接觸角，係為17°。將此值作為在第1平行線圖案之形成區域內的第2線狀液體之接觸角F。 On the polyethylene terephthalate (PET) substrate which is easily subjected to processing with a contact angle of 22° with respect to the ink 8, 20 μL of the ink 8 is dropped and dried, and in the droplet A ring of thin lines caused by coffee stains is formed around it. Thereafter, the contact angle of the ink 8 (the same composition as the second linear liquid) was measured for the central region inside the annular thin wire. The contact angle measured was 17°. This value is taken as the contact angle F of the second linear liquid in the formation region of the first parallel line pattern.

B.在第1平行線圖案之形成區域外的第2線狀液體之接觸角之測定 B. Measurement of the contact angle of the second linear liquid outside the formation region of the first parallel line pattern

在基材表面上將墨水8滴下3μL，而對於在基材表面上的第2線狀液體之接觸角作了測定。所測定出之接觸角，係為20°。將此值作為在第1平行線圖案之形成區域外的第2線狀液體之接觸角G。 The ink 8 was dropped 3 μL on the surface of the substrate, and the contact angle of the second linear liquid on the surface of the substrate was measured. The contact angle measured was 20°. This value is taken as the contact angle G of the second linear liquid outside the formation region of the first parallel line pattern.

4.圖案之形成 4. Pattern formation

使用安裝有KONICA MINOLTA公司製之噴墨頭「512LHX」(標準液滴容量42pL)之XY機器人(MUSASHI ENGINEERING公司製「SHOTMASTER300」)、和噴墨控制系統(KONICA MINOLTA公司製「IJCS-1」)，而將墨水1以會成為噴嘴列方向間節距282μm、掃描方向間節距45μm的方式來作為液滴而依序吐出至基材5上，並藉由使在基材上而於掃描方向上連續性地作了賦予的液滴合併為一，來形成了複數之線狀液體。另外，在一面進行印刷一面將載置有基材之平台加熱至70℃而使此些之線狀液體乾燥的過程中，藉由使固形量堆積在周邊部處，而從1根的線狀液體來形成了1組2根的平行線圖案。 XY robot ("SHOTMASTER300" manufactured by MUSASHI ENGINEERING Co., Ltd.) and inkjet control system ("IJCS-1" manufactured by KONICA MINOLTA Co., Ltd.) equipped with an inkjet head "512LHX" (standard droplet capacity 42pL) manufactured by KONICA MINOLTA Co., Ltd. The ink 1 is sequentially discharged as a droplet onto the substrate 5 so as to have a pitch of 282 μm between the nozzle rows and a pitch of 45 μm between the scanning directions, and is scanned in the substrate by being placed on the substrate. The droplets which have been continuously applied are combined into one to form a plurality of linear liquids. In addition, in the process of drying the linear substrate in which the substrate on which the substrate is placed is heated to 70 ° C while printing, the solid amount is deposited in the peripheral portion, and the linear shape is formed from one. The liquid forms a set of 2 parallel line patterns.

之後，使基材作90°之旋轉，並在與第1平行線圖案相正交之方向上，藉由與上述相同之方法來塗布由墨水1所成之複數之第2線狀液體，並使其乾燥，而形成 了第2平行線圖案。 Thereafter, the substrate is rotated at 90°, and a plurality of second linear liquids formed by the ink 1 are applied in the same direction as the first parallel line pattern, and Let it dry and form The second parallel line pattern.

如此這般，而形成了使第1平行線圖案和第2平行線圖案以直角而相互交叉之網格狀之導電性圖案。網格狀之導電性圖案全體的尺寸，係為50mm×50mm。 In this manner, a grid-like conductive pattern in which the first parallel line pattern and the second parallel line pattern intersect each other at right angles is formed. The size of the entire grid-shaped conductive pattern is 50 mm × 50 mm.

(實施例21) (Example 21) 1.墨水之調製 1. Modulation of ink

調製了由下述組成所成之墨水9。 An ink 9 composed of the following composition was prepared.

‧銀奈米粒子之水分散液2(銀奈米粒子：40重量%)：1.75重量% ‧ Silver nanoparticle particle dispersion 2 (silver nanoparticle: 40% by weight): 1.75 wt%

‧矽系界面活性劑(BYK公司製「BYK-348」)：0.01重量% ‧矽 surfactant (BYK-348 by BYK): 0.01% by weight

‧純水：殘部 ‧Pure water: Residue

另外，銀奈米粒子之水分散液2，與在實施例20中所使用的銀奈米粒子之水分散液1，其分散劑係為相異。 Further, the aqueous dispersion 2 of the silver nanoparticles and the aqueous dispersion 1 of the silver nanoparticles used in Example 20 were different in dispersant.

2.基材之調製 2. Modulation of the substrate

作為基材，係使用基材5(表面能E=52mN/m)。 As the substrate, a substrate 5 (surface energy E = 52 mN/m) was used.

3.表面能以及接觸角之測定 3. Determination of surface energy and contact angle

將實施例20之墨水8替換為墨水9，並與實施例20相同的而進行了測定，其結果，在第1平行線圖案之形成區域內的表面能C，係為49mN/m，在第1平行線圖案之 形成區域內的第2線狀液體之接觸角F，係為25°，在第1平行線圖案之形成區域外的第2線狀液體之接觸角G，係為21°。 The ink 8 of Example 20 was replaced with the ink 9, and the measurement was carried out in the same manner as in Example 20. As a result, the surface energy C in the region where the first parallel line pattern was formed was 49 mN/m. 1 parallel line pattern The contact angle F of the second linear liquid in the formation region is 25°, and the contact angle G of the second linear liquid outside the formation region of the first parallel line pattern is 21°.

4.圖案之形成 4. Pattern formation

除了將墨水8替換為墨水9以外，與實施例20相同的，而形成了網格狀之導電性圖案。 A grid-like conductive pattern was formed in the same manner as in Example 20 except that the ink 8 was replaced with the ink 9.

(實施例22) (Example 22) 1.墨水之調製 1. Modulation of ink

作為墨水，係使用墨水8。 Ink 8 is used as the ink.

2.基材之調製 2. Modulation of the substrate

作為基材，係使用藉由易接著加工(表面處理)而將基材之表面能設為48mN/m之由PET基材所成之基材6。 As the substrate, a substrate 6 made of a PET substrate having a surface energy of 48 mN/m by easy processing (surface treatment) was used.

3.表面能以及接觸角之測定 3. Determination of surface energy and contact angle

將實施例20之基材5替換為基材6，並與實施例20相同的而進行了測定，其結果，在第1平行線圖案之形成區域內的表面能C，係為56mN/m，在第1平行線圖案之形成區域內的第2線狀液體之接觸角F，係為17°，在第1平行線圖案之形成區域外的第2線狀液體之接觸角G，係為28°。 The substrate 5 of Example 20 was replaced with the substrate 6 and was measured in the same manner as in Example 20. As a result, the surface energy C in the region where the first parallel line pattern was formed was 56 mN/m. The contact angle F of the second linear liquid in the region where the first parallel line pattern is formed is 17°, and the contact angle G of the second linear liquid outside the region where the first parallel line pattern is formed is 28 °.

4.圖案之形成 4. Pattern formation

使用安裝有KONICA MINOLTA公司製之噴墨頭「512LHX」(標準液滴容量42pL)之XY機器人(MUSASHI ENGINEERING公司製「SHOTMASTER300」)、和噴墨控制系統(KONICA MINOLTA公司製「IJCS-1」)，而將墨水1以會成為噴嘴列方向間節距282μm、掃描方向間節距45μm的方式來作為液滴而依序吐出至基材6上，並藉由使在基材上而於掃描方向上連續性地作了賦予的液滴合併為一，來形成了複數之線狀液體。另外，在一面進行印刷一面將載置有基材之平台加熱至70℃而使此些之線狀液體乾燥的過程中，藉由使固形量堆積在周邊部處，而從1根的線狀液體來形成了1組2根的平行線圖案。 XY robot ("SHOTMASTER300" manufactured by MUSASHI ENGINEERING Co., Ltd.) and inkjet control system ("IJCS-1" manufactured by KONICA MINOLTA Co., Ltd.) equipped with an inkjet head "512LHX" (standard droplet capacity 42pL) manufactured by KONICA MINOLTA Co., Ltd. The ink 1 is sequentially discharged as a droplet onto the substrate 6 so as to have a pitch of 282 μm between the nozzle row directions and a pitch of 45 μm between the scanning directions, and is scanned in the substrate by being placed on the substrate. The droplets which have been continuously applied are combined into one to form a plurality of linear liquids. In addition, in the process of drying the linear substrate in which the substrate on which the substrate is placed is heated to 70 ° C while printing, the solid amount is deposited in the peripheral portion, and the linear shape is formed from one. The liquid forms a set of 2 parallel line patterns.

之後，將形成有第1平行線圖案之基材放置在120℃之熱板上，而進行了1小時的由加熱所致之洗淨。 Thereafter, the substrate on which the first parallel line pattern was formed was placed on a hot plate at 120 ° C, and the cleaning was performed by heating for 1 hour.

在進行了由加熱所致之洗淨後，使基材作90°之旋轉，並在與第1平行線圖案相正交之方向上，藉由與上述相同之方法來塗布由墨水1所成之複數之第2線狀液體，並使其乾燥，而形成了第2平行線圖案。 After the cleaning by heating, the substrate is rotated by 90°, and coated by the ink 1 in the same direction as the first parallel line pattern by the same method as described above. The plurality of second linear liquids are dried and a second parallel line pattern is formed.

如此這般，而形成了使第1平行線圖案和第2平行線圖案以直角而相互交叉之網格狀之導電性圖案。網格狀之導電性圖案全體的尺寸，係為50mm×50mm。 In this manner, a grid-like conductive pattern in which the first parallel line pattern and the second parallel line pattern intersect each other at right angles is formed. The size of the entire grid-shaped conductive pattern is 50 mm × 50 mm.

(實施例23) (Example 23)

在實施例22中，將由加熱所致之洗淨替換為下述由電磁波所致之洗淨，除此以外，係與實施例22相同的，而形成了網格狀之圖案。 In the same manner as in Example 22 except that the cleaning by heating was replaced with the following washing by electromagnetic waves, a grid-like pattern was formed.

〈由電磁波所致之洗淨〉 <washing by electromagnetic waves>

作為由電磁波所致之洗淨，係進行了由氙閃光燈所致之洗淨。 As a cleaning by electromagnetic waves, cleaning by a flash lamp is performed.

使用Xenon公司製氙閃光燈裝置「SINTERON 2000」，而以脈衝寬幅500μ秒、施加電壓3.8kV來將氙閃光作1次的照射，而將包含第1平行線圖案之形成區域內的區域作了洗淨。 The xenon flash system "SINTERON 2000" was used, and the xenon flash was irradiated once with a pulse width of 500 μsec and an applied voltage of 3.8 kV, and the area in the formation region including the first parallel line pattern was made. Wash.

(實施例24) (Example 24)

在實施例22中，將由加熱所致之洗淨替換為下述由溶劑所致之洗淨，除此以外，係與實施例22相同的，而形成了網格狀之圖案。 In the same manner as in Example 22 except that the washing by heating was replaced with the following washing with a solvent, a grid-like pattern was formed.

〈由溶劑所致之洗淨〉 <washing by solvent>

藉由在2-丙醇中浸漬10分鐘，而將包含第1平行線圖案之形成區域內的區域作了洗淨。 The area in the formation region including the first parallel line pattern was washed by immersion in 2-propanol for 10 minutes.

(實施例25) (Embodiment 25) 1.墨水之調製 1. Modulation of ink

作為墨水，係使用墨水8。 Ink 8 is used as the ink.

2.基材之調製 2. Modulation of the substrate

作為基材，係使用基材6(表面能E=48mN/m)。 As the substrate, a substrate 6 (surface energy E = 48 mN/m) was used.

3.表面能以及接觸角之測定 3. Determination of surface energy and contact angle

將實施例20之基材5替換為基材6，並與實施例20相同的而進行了測定，其結果，在第1平行線圖案之形成區域內的表面能C，係為56mN/m，在第1平行線圖案之形成區域內的第2線狀液體之接觸角F，係為17°，在第1平行線圖案之形成區域外的第2線狀液體之接觸角G，係為28°。 The substrate 5 of Example 20 was replaced with the substrate 6 and was measured in the same manner as in Example 20. As a result, the surface energy C in the region where the first parallel line pattern was formed was 56 mN/m. The contact angle F of the second linear liquid in the region where the first parallel line pattern is formed is 17°, and the contact angle G of the second linear liquid outside the region where the first parallel line pattern is formed is 28 °.

4.圖案之形成 4. Pattern formation

使用安裝有KONICA MINOLTA公司製之噴墨頭「512LHX」(標準液滴容量42pL)之XY機器人(MUSASHI ENGINEERING公司製「SHOTMASTER300」)、和噴墨控制系統(KONICA MINOLTA公司製「IJCS-1」)，而將墨水1以會成為噴嘴列方向間節距282μm、掃描方向間節距45μm的方式來作為液滴而依序吐出至基材6上，並藉由使在基材上而於掃描方向上連續性地作了賦予的液滴合併為一，來形成了複數之線狀液體。另外，在一面進行印刷一面將載置有基材之平台加熱至70℃而使此些之線狀液體乾燥的過程中，藉由使固形量堆積 在周邊部處，而從1根的線狀液體來形成了1組2根的平行線細線圖案。 XY robot ("SHOTMASTER300" manufactured by MUSASHI ENGINEERING Co., Ltd.) and inkjet control system ("IJCS-1" manufactured by KONICA MINOLTA Co., Ltd.) equipped with an inkjet head "512LHX" (standard droplet capacity 42pL) manufactured by KONICA MINOLTA Co., Ltd. The ink 1 is sequentially discharged as a droplet onto the substrate 6 so as to have a pitch of 282 μm between the nozzle row directions and a pitch of 45 μm between the scanning directions, and is scanned in the substrate by being placed on the substrate. The droplets which have been continuously applied are combined into one to form a plurality of linear liquids. In addition, the surface of the substrate on which the substrate is placed is heated to 70 ° C while one side is being printed, and the solid amount is accumulated in the process of drying the linear liquid. At the peripheral portion, one set of two parallel line fine line patterns is formed from one linear liquid.

之後，使基材作90°之旋轉，並在與第1平行線圖案相正交之方向上，塗布由墨水1所成之複數之第2線狀液體，並使其乾燥，而形成了第2平行線圖案。此時，在墨水之塗布時，係將在第1平行線圖案之形成區域內的第2線狀液體之每單位長度的液體賦予量，調整為在第1平行線圖案之形成區域外的液體賦予量之70%，而作了塗布。 Thereafter, the substrate is rotated by 90°, and a plurality of second linear liquids formed of the ink 1 are applied in a direction orthogonal to the first parallel line pattern, and dried, thereby forming a first 2 parallel line patterns. In this case, at the time of application of the ink, the amount of liquid per unit length of the second linear liquid in the region where the first parallel line pattern is formed is adjusted to be a liquid outside the formation region of the first parallel line pattern. A coating amount of 70% was applied.

如此這般，而形成了使第1平行線圖案和第2平行線圖案以直角而相互交叉之網格狀之導電性圖案。網格狀之導電性圖案全體的尺寸，係為50mm×50mm。 In this manner, a grid-like conductive pattern in which the first parallel line pattern and the second parallel line pattern intersect each other at right angles is formed. The size of the entire grid-shaped conductive pattern is 50 mm × 50 mm.

(實施例26) (Example 26) 1.墨水之調製 1. Modulation of ink

作為墨水，係使用墨水8。 Ink 8 is used as the ink.

2.基材之調製 2. Modulation of the substrate

作為基材，係使用藉由易接著加工(表面處理)而將基材之表面能設為56mN/m之由PET基材所成之基材7。 As the substrate, a substrate 7 made of a PET substrate having a surface energy of 56 mN/m by easy processing (surface treatment) was used.

3.表面能以及接觸角之測定 3. Determination of surface energy and contact angle

首先，將銀奈米粒子之水分散液1(銀奈米粒子：40重量%)，藉由線錠(wire bar)#7來塗布在基材7上， 並使其乾燥，而製作了導電材料(銀奈米粒子)之平塗面。在對於此平塗面之表面能作了測定後，其結果，係為61mN/m。將此值，作為將與第1線狀液體相同組成的液體作塗布並使其乾燥後所成的平塗面之表面能。 First, an aqueous dispersion 1 (silver nanoparticle: 40% by weight) of silver nanoparticles is coated on a substrate 7 by wire bar #7. And drying it, and making a flat surface of a conductive material (silver nanoparticle). After measuring the surface energy of the flat surface, the result was 61 mN/m. This value is used as a surface energy of a flat coated surface obtained by applying and drying a liquid having the same composition as that of the first linear liquid.

又，將實施例20之基材5替換為基材7，並與實施例20相同的而進行了測定，其結果，在第1平行線圖案之形成區域內的表面能C，係為56mN/m，在第1平行線圖案之形成區域內的第2線狀液體之接觸角F，係為15°，在第1平行線圖案之形成區域外的第2線狀液體之接觸角G，係為19°。 Further, the substrate 5 of Example 20 was replaced with the substrate 7, and the measurement was carried out in the same manner as in Example 20. As a result, the surface energy C in the region where the first parallel line pattern was formed was 56 mN/ m, the contact angle F of the second linear liquid in the region where the first parallel line pattern is formed is 15°, and the contact angle G of the second linear liquid outside the region where the first parallel line pattern is formed is It is 19°.

4.圖案之形成 4. Pattern formation

在實施例20中，將基材5替換為基材7，除此之外，係與實施例20相同的，而形成了網格狀之導電性圖案。 In the same manner as in Example 20 except that the substrate 5 was replaced with the substrate 7 in the same manner as in Example 20, a grid-like conductive pattern was formed.

(實施例27) (Example 27) 1.墨水之調製 1. Modulation of ink

調製了由下述組成所成之墨水11。 The ink 11 composed of the following composition was prepared.

‧銀奈米粒子之水分散液1(銀奈米粒子：40重量%)：1.75重量% ‧ Silver nanoparticle aqueous dispersion 1 (silver nanoparticle: 40% by weight): 1.75 wt%

‧二乙二醇一丁基醚：20重量% ‧ Diethylene glycol monobutyl ether: 20% by weight

‧純水：殘部 ‧Pure water: Residue

2.基材之調製 2. Modulation of the substrate

作為基材，係使用基材5(表面能E=52mN/m)。 As the substrate, a substrate 5 (surface energy E = 52 mN/m) was used.

3.接觸角之測定 3. Determination of contact angle

使用協和界面化學公司製之接觸角測定裝置「DM-501」，而對於在第1平行線圖案之形成區域外的二乙二醇一丁基醚(沸點231℃)之接觸角作了測定，其結果，接觸角H係為5°。另外，係採用在將二乙二醇一丁基醚滴下後而經過5秒鐘後之值。 The contact angle measuring device "DM-501" manufactured by Kyowa Interface Chemical Co., Ltd. was used, and the contact angle of diethylene glycol monobutyl ether (boiling point 231 ° C) outside the formation region of the first parallel line pattern was measured. As a result, the contact angle H was 5°. Further, the value after 5 seconds elapsed after dropping diethylene glycol monobutyl ether was employed.

4.圖案之形成 4. Pattern formation

在實施例20中，將基材8替換為基材11，除此之外，係與實施例20相同的，而形成了網格狀之導電性圖案。 In the same manner as in Example 20 except that the substrate 8 was replaced with the substrate 11 in the same manner as in Example 20, a grid-like conductive pattern was formed.

(實施例28) (Embodiment 28) 1.墨水之調製 1. Modulation of ink

作為墨水，係使用墨水8。 Ink 8 is used as the ink.

2.基材之調製 2. Modulation of the substrate

作為基材，係使用基材6(表面能E=48mN/m)。 As the substrate, a substrate 6 (surface energy E = 48 mN/m) was used.

3.表面能以及接觸角之測定 3. Determination of surface energy and contact angle

將實施例20之基材5替換為基材6，並與實施例20 相同的而進行了測定，其結果，在第1平行線圖案之形成區域內的表面能C，係為56mN/m，在第1平行線圖案之形成區域內的第2線狀液體之接觸角F，係為17°，在第1平行線圖案之形成區域外的第2線狀液體之接觸角G，係為28°。 Replace the substrate 5 of Example 20 with the substrate 6, and with Example 20 The measurement was carried out in the same manner. As a result, the surface energy C in the region where the first parallel line pattern was formed was 56 mN/m, and the contact angle of the second linear liquid in the region where the first parallel line pattern was formed. F is 17°, and the contact angle G of the second linear liquid outside the formation region of the first parallel line pattern is 28°.

4.圖案之形成 4. Pattern formation

在實施例20中，將基材5替換為基材6，除此之外，係與實施例20相同的，而形成了網格狀之導電性圖案。 In the same manner as in Example 20 except that the substrate 5 was replaced with the substrate 6 in the same manner as in Example 20, a grid-like conductive pattern was formed.

(比較例2) (Comparative Example 2) 1.墨水之調製 1. Modulation of ink

調製了由下述組成所成之墨水10。 The ink 10 composed of the following composition was prepared.

‧銀奈米粒子之水分散液3(銀奈米粒子：40重量%)：1.75重量% ‧ Silver nanoparticle particle dispersion 3 (silver nanoparticle: 40% by weight): 1.75 wt%

‧矽系界面活性劑(BYK公司製「BYK-348」)：0.01重量% ‧矽 surfactant (BYK-348 by BYK): 0.01% by weight

‧純水：殘部 ‧Pure water: Residue

另外，銀奈米粒子之水分散液3，與銀奈米粒子之水分散液1以及2，其分散劑係為相異。 Further, the aqueous dispersion 3 of the silver nanoparticles and the aqueous dispersions 1 and 2 of the silver nanoparticles are different in dispersant.

2.基材之調製 2. Modulation of the substrate

作為基材，係使用基材6(表面能E=48mN/m)。 As the substrate, a substrate 6 (surface energy E = 48 mN/m) was used.

3.表面能以及接觸角之測定 3. Determination of surface energy and contact angle

將實施例20之墨水8替換為墨水10，並進而將基材5替換為基材6，而與實施例20相同的而進行了測定，其結果，在第1平行線圖案之形成區域內的表面能C，係為61mN/m，在第1平行線圖案之形成區域內的第2線狀液體之接觸角F，係為12°，在第1平行線圖案之形成區域外的第2線狀液體之接觸角G，係為29°。 The ink 8 of Example 20 was replaced with the ink 10, and the substrate 5 was further replaced with the substrate 6, and the measurement was carried out in the same manner as in Example 20, and as a result, in the formation region of the first parallel line pattern. The surface energy C is 61 mN/m, and the contact angle F of the second linear liquid in the region where the first parallel line pattern is formed is 12°, and the second line outside the formation region of the first parallel line pattern The contact angle G of the liquid is 29°.

4.圖案之形成 4. Pattern formation

在實施例20中，將墨水8替換為墨水10，並進而將基材5替換為基材6，除此之外，係與實施例20相同的，而形成了網格狀之導電性圖案。 In the same manner as in Example 20 except that the ink 8 was replaced with the ink 10 and the substrate 5 was replaced with the substrate 6 in the same manner as in Example 20, a grid-like conductive pattern was formed.

(實施例29) (Example 29) 1.墨水之調製 1. Modulation of ink

作為墨水，係使用墨水11。 As the ink, the ink 11 is used.

2.基材之調製 2. Modulation of the substrate

作為基材，係使用基材6(表面能E=48mN/m)。 As the substrate, a substrate 6 (surface energy E = 48 mN/m) was used.

3.接觸角之測定 3. Determination of contact angle

使用協和界面化學公司製之接觸角測定裝置「DM-501」，而對於在第1平行線圖案之形成區域外的二乙二 醇一丁基醚(沸點231℃)之接觸角作了測定，其結果，接觸角H係為8°。另外，係採用在將二乙二醇一丁基醚滴下後而經過5秒鐘後之值。 The contact angle measuring device "DM-501" manufactured by Kyowa Interface Chemical Co., Ltd. is used, and the second two are outside the formation region of the first parallel line pattern. The contact angle of the alcohol monobutyl ether (boiling point 231 ° C) was measured, and as a result, the contact angle H was 8°. Further, the value after 5 seconds elapsed after dropping diethylene glycol monobutyl ether was employed.

4.圖案之形成 4. Pattern formation

在實施例27中，將基材5替換為基材6，除此之外，係與實施例27相同的，而形成了網格狀之導電性圖案。 In the same manner as in Example 27 except that the substrate 5 was replaced with the substrate 6 in the same manner as in Example 27, a grid-like conductive pattern was formed.

〈平均間隔A以及平均間隔B之測定〉 <Measurement of average interval A and average interval B>

在藉由實施例20~30所得到的網格狀之導電性圖案中，針對構成第2平行線圖案之2根的線段間之間隔，而將在第1平行線圖案之形成區域內的平均間隔A，設為在圖6中所說明的總計7個場所之測定場所A₁~A₇處所作了測定的間隔之平均值，而求取出來。又，針對構成第2平行線圖案之2根的線段間之間隔，而將在第1平行線圖案之形成區域外的平均間隔B，設為在圖6中所說明的總計5個場所之測定場所B₁~B₅處所作了測定的間隔之平均值，而求取出來。進而，根據此些之平均間隔A以及平均間隔B之值，而求取出上述之式(1)中的B/A之值。 In the grid-like conductive pattern obtained in Examples 20 to 30, the average of the intervals between the line segments constituting the second parallel line pattern in the formation region of the first parallel line pattern The interval A is obtained by taking the average value of the intervals measured at the measurement sites A ₁ to A ₇ of the total of seven locations described in FIG. 6 . Further, the average interval B outside the formation region of the first parallel line pattern is determined as the interval between the line segments constituting the two parallel line patterns, and is measured in a total of five places described in FIG. The average of the measured intervals at the places B ₁ to B ₅ was taken out. Further, based on the values of the average interval A and the average interval B, the value of B/A in the above formula (1) is obtained.

藉由求取出此B/A之值，係能夠判定其是否滿足上述之式(1)。亦即是，也可以說，係能夠判定是否達成了用以滿足上述之式(1)的調整。 By taking out the value of this B/A, it is possible to determine whether or not the above formula (1) is satisfied. In other words, it can be said that it is possible to determine whether or not the adjustment to satisfy the above formula (1) is achieved.

〈評價方法〉 <Evaluation method> ‧低視覺辨認性之評價方法 ‧ low visual recognition evaluation method

對於藉由實施例20~30所得到的網格狀之導電性圖案進行目視，並依據下述之評價基準來作了評價。 The grid-shaped conductive patterns obtained in Examples 20 to 30 were visually observed and evaluated based on the following evaluation criteria.

[評價基準] [evaluation benchmark]

A：係無法以視覺而辨識出像是週期性圖案一般之物，而涵蓋全體視覺上均為均勻 A: It is impossible to visually recognize things like periodic patterns, but cover all visually uniform.

B：係能夠以視覺而辨識出像是週期性圖案一般之物 B: It is possible to visually recognize something like a periodic pattern.

‧電阻值之方向不均的評價方法 ‧ Evaluation method for uneven direction of resistance value

對於藉由實施例20~30所得到的網格狀之導電性圖案，而藉由以下之方法來對於電阻值之方向不均作了評價。 With respect to the grid-shaped conductive patterns obtained in Examples 20 to 30, the direction unevenness of the resistance values was evaluated by the following method.

切出與第1平行線圖案之方向(第1方向)相平行的長度50mm寬幅10mm之短籤，並在長邊之兩端(亦即是短邊)處設置由銀糊所成之測定用電極，而藉由測試機來對於短籤之端子間的電阻作了測定。同樣的，切出與第2平行線圖案之方向(第2方向)相平行的長度50mm寬幅10mm之短籤，並亦藉由測試機來對於端子間電阻作了測定，而對於第1方向和第2方向上的電阻之比例作了評價。電阻之比例，具體而言，係為將「第2方向上之電阻」與「第1方向上之電阻」間之差的絕對值，除以「第1方向上之電阻」，並以百分比來作了展示者。 Cutting a short length of 50 mm and a width of 10 mm parallel to the direction of the first parallel line pattern (first direction), and setting the measurement by silver paste at both ends of the long side (that is, the short side) The resistance between the terminals of the short-pick was measured by an electric machine using an electrode. Similarly, a short length of 50 mm and a width of 10 mm parallel to the direction of the second parallel line pattern (the second direction) is cut out, and the resistance between the terminals is also measured by the tester, and for the first direction. The ratio of the resistance in the second direction was evaluated. Specifically, the ratio of the resistance is the absolute value of the difference between the "resistance in the second direction" and the "resistance in the first direction" divided by the "resistance in the first direction", and is expressed as a percentage. Made a presenter.

作為某一基準，可以評價為：若是電阻之比例為10%以下，則在實用性上而言係為理想，若是電阻之比例超過10%，則在實用性上係並不理想。 As a certain criterion, it can be evaluated that if the ratio of the electric resistance is 10% or less, it is practically preferable, and if the ratio of the electric resistance exceeds 10%, it is not preferable in practical use.

將以上之結果展示於表3。 The above results are shown in Table 3.

〈評價〉 <Evaluation>

根據表3，可以得知，在以會使平均間隔A以及平均間隔B滿足式(1)之「0.9≦B/A≦1.1」的方式來進行了調整的實施例20~27中，係在低視覺辨認性上為優良，並且亦能夠防止電阻值之方向不均。另一方面，在並未進行此種調整的實施例28~30中，係在低視覺辨認性上為差，並且亦無法充分地防止電阻值之方向不均。 According to Table 3, it can be seen that in Examples 20 to 27 in which the average interval A and the average interval B satisfy "0.9≦B/A≦1.1" of the formula (1), It is excellent in low visibility and also prevents uneven orientation of resistance values. On the other hand, in Examples 28 to 30 in which such adjustment was not performed, the difference in visibility was poor, and the direction unevenness of the resistance value was not sufficiently prevented.

進而，針對實施例22之網格狀的導電性圖案和實施例29之網格狀的導電性圖案，而分別在圖18(b)以及圖18(a)中將光學顯微鏡照片作了展示。在各照片中，從左上朝向右下之方向，係為第1方向(第1平行線圖案之方向)，從左下朝向右上之方向，係為第2方向(第2平行線圖案之方向)。根據此些之照片的對比，亦可得知，若依據本發明，則在低視覺辨認性上係為優良。進而，在第1方向上和第2方向上也並未發現到導電路徑的長度之差，而可得知係能夠防止電阻值之方向不均。 Further, with respect to the grid-shaped conductive pattern of Example 22 and the grid-shaped conductive pattern of Example 29, optical micrographs are shown in Figs. 18(b) and 18(a), respectively. In each of the photographs, the direction from the upper left to the lower right is the first direction (the direction of the first parallel line pattern), and the direction from the lower left to the upper right is the second direction (the direction of the second parallel line pattern). From the comparison of the photographs of these, it is also known that, according to the present invention, it is excellent in low visibility. Further, in the first direction and in the second direction, the difference in length of the conductive path was not observed, and it was found that the direction of the resistance value was prevented from being uneven.

根據以上之結果，係能夠確認到將平均間隔A以及平均間隔B以會滿足「0.9≦B/A≦1.1」的方式來進行調整一事的有效性。 According to the above results, it is possible to confirm the effectiveness of adjusting the average interval A and the average interval B so as to satisfy "0.9≦B/A≦1.1".

在實施例20、21中，係藉由「將第1平行線圖案之形成區域內的表面能C和第1平行線圖案之形成區域外的表面能E之間之差(|C-E|)設為5mN/m以下」之 調整，或者是藉由「將在第1平行線圖案之形成區域內的第2線狀液體之接觸角F和在第1平行線圖案之形成區域外的第2線狀液體之接觸角G之間之差，設為10°以下」之調整，來成為使平均間隔A以及平均間隔B會滿足式(1)「0.9≦B/A≦1.1」。於此，作為其中一例，係針對藉由基材之表面處理或墨水組成之設定來對於表面能或接觸角作調整的例子作了展示。 In the examples 20 and 21, the difference (|CE|) between the surface energy C in the formation region of the first parallel line pattern and the surface energy E outside the formation region of the first parallel line pattern is set. 5mN/m or less" The adjustment or the contact angle F of the second linear liquid in the region where the first parallel line pattern is formed and the contact angle G of the second linear liquid outside the formation region of the first parallel line pattern are adjusted. The difference between the differences is set to 10° or less, so that the average interval A and the average interval B satisfy the equation (1) "0.9≦B/A≦1.1". Here, as an example, an example in which the surface energy or the contact angle is adjusted by the surface treatment of the substrate or the ink composition is shown.

在實施例22~24中，係藉由「在形成了第1平行線圖案之後，於賦予第2線狀液體之前，將包含第1平行線圖案之形成區域內的區域作洗淨」之調整，來成為使平均間隔A以及平均間隔B會滿足式(1)「0.9≦B/A≦1.1」。在實施例22中，係使用由加熱所致之洗淨，在實施例23中，係使用由電磁波所致之洗淨，在實施例24中，係使用由溶劑所致之洗淨。 In the examples 22 to 24, the adjustment of the region including the formation region of the first parallel line pattern before the second linear liquid is applied is performed after the formation of the first parallel line pattern. In order to make the average interval A and the average interval B satisfy the formula (1) "0.9≦B/A≦1.1". In Example 22, washing by heating was used, and in Example 23, washing by electromagnetic waves was used, and in Example 24, washing by solvent was used.

在實施例25中，係藉由「將在第1平行線圖案之形成區域內的第2線狀液體之每單位長度的液體賦予量，和在第1平行線圖案之形成區域外的第2線狀液體之每單位長度的液體賦予量，設為互為相異」之調整，來成為使平均間隔A以及平均間隔B會滿足式(1)「0.9≦B/A≦1.1」。 In the twenty-fifth embodiment, the amount of the liquid per unit length of the second linear liquid in the formation region of the first parallel line pattern and the second portion outside the formation region of the first parallel line pattern are used. The liquid supply amount per unit length of the linear liquid is adjusted to be different from each other, so that the average interval A and the average interval B satisfy the formula (1) "0.9 ≦ B / A ≦ 1.1".

在實施例26中，係藉由「將第1平行線圖案之形成區域內的表面能C和第1平行線圖案之形成區域外的表面能E之間之差(|C-E|)設為5mN/m以下」之調整、藉由「將在第1平行線圖案之形成區域內的第2線狀 液體之接觸角F和在第1平行線圖案之形成區域外的第2線狀液體之接觸角G之間之差，設為10°以下」之調整、或者是「將藉由塗布與第1線狀液體相同組成之液體並使其乾燥所成的平塗面之表面能D和第1平行線圖案之形成區域外之表面能E之間之差(|D-E|)設為5mN/m以下」之調整，來成為使平均間隔A以及平均間隔B會滿足式(1)「0.9≦B/A≦1.1」。 In the twenty-sixth embodiment, the difference (|CE|) between the surface energy C in the formation region of the first parallel line pattern and the surface energy E outside the formation region of the first parallel line pattern is set to 5 mN. "/m or less" is adjusted by "the second line in the region where the first parallel line pattern is formed" The difference between the contact angle F of the liquid and the contact angle G of the second linear liquid outside the region where the first parallel line pattern is formed is 10° or less, or "by coating and the first The difference (|DE|) between the surface energy D of the flat coating surface and the surface energy E outside the formation region of the first parallel line pattern formed by drying the liquid having the same composition of the linear liquid is set to 5 mN/m or less. The adjustment is such that the average interval A and the average interval B satisfy the formula (1) "0.9≦B/A≦1.1".

在實施例27中，係藉由「將在第1平行線圖案之形成區域外的第2線狀液體中之溶劑中的沸點為最高之溶劑的接觸角，設為6°以下」之調整，來成為使平均間隔A以及平均間隔B會滿足式(1)「0.9≦B/A≦1.1」。 In the embodiment 27, the contact angle of the solvent having the highest boiling point in the solvent in the second linear liquid outside the formation region of the first parallel line pattern is adjusted to be 6 or less. Therefore, the average interval A and the average interval B satisfy the equation (1) "0.9≦B/A≦1.1".

1‧‧‧基材 1‧‧‧Substrate

2‧‧‧導電性細線 2‧‧‧Electrical thin wires

21‧‧‧第1層 21‧‧‧1st floor

22‧‧‧第2層 22‧‧‧2nd floor

Claims (33)

一種導電性圖案，係為由線寬幅未滿10μm之導電性細線所成的圖案，其特徵為：前述細線之至少一部分係成為多層構造，該多層構造，係以第1層和第2層作為構成要素，該第1層，係包含有從導電性粒子、導電性填充物、導電性金屬線所選擇的1種或2種以上之導電材料，且膜厚未滿500nm，該第2層，其膜厚係為較前述第1層更厚，並以金屬作為主成分。 A conductive pattern is a pattern formed of conductive thin wires having a line width of less than 10 μm, characterized in that at least a part of the fine lines is a multilayer structure, and the multilayer structure is a first layer and a second layer The first layer includes one or two or more kinds of conductive materials selected from the conductive particles, the conductive filler, and the conductive metal wires, and the film thickness is less than 500 nm, and the second layer The film thickness is thicker than the first layer, and a metal is used as a main component. 如申請專利範圍第1項所記載之導電性圖案，其中，前述第1層和前述第2層之膜密度係為相異。 The conductive pattern according to claim 1, wherein the film density of the first layer and the second layer are different. 如申請專利範圍第1項或第2項所記載之導電性圖案，其中，前述導電性細線之表面，其算數平均粗度Ra係為200nm以上未滿2000nm。 The conductive pattern according to the first or second aspect of the invention, wherein the surface of the conductive thin wire has an arithmetic mean roughness Ra of 200 nm or more and less than 2000 nm. 如申請專利範圍第1~3項中之任一項所記載之導電性圖案，其中，前述第1層，係以銀或銅作為主成分，前述第2層，係以銅作為主成分。 The conductive pattern according to any one of claims 1 to 3, wherein the first layer is made of silver or copper as a main component, and the second layer is made of copper as a main component. 如申請專利範圍第1~4項中之任一項所記載之導電性圖案，其中，在前述第2層之與前述第1層相反側處，係更進而具備有第3層。 The conductive pattern according to any one of claims 1 to 4, wherein the second layer is further provided with a third layer on a side opposite to the first layer. 如申請專利範圍第5項所記載之導電性圖案，其中，前述第3層，係由從金屬、金屬氧化物以及有機物中所選擇的至少1者所成。 The conductive pattern according to claim 5, wherein the third layer is made of at least one selected from the group consisting of metals, metal oxides, and organic materials. 一種導電性圖案，其特徵為： 係由如申請專利範圍第1~6項中之任一項所記載之導電性圖案、和以與前述導電性圖案之端部之至少一部分相重疊的方式所形成的包含有導電材料之平塗圖案，而形成之。 A conductive pattern characterized by: The conductive pattern according to any one of claims 1 to 6 and the flat coating comprising the conductive material formed to overlap at least a portion of the end portion of the conductive pattern. The pattern is formed. 一種附導電性圖案基材，其特徵為：係在進行了表面處理的基材上，設置有由線寬幅未滿10μm之導電性細線所成的圖案，前述細線之至少一部分係成為多層構造，該多層構造，係以第1層和第2層作為構成要素，該第1層，係包含有從導電性粒子、導電性填充物、導電性金屬線所選擇的1種或2種以上之導電材料，且膜厚未滿500nm，該第2層，其膜厚係為較前述第1層更厚，並以金屬作為主成分。 A conductive pattern substrate characterized in that a substrate having a surface treatment is provided with a pattern formed of conductive thin wires having a line width of less than 10 μm, and at least a part of the fine lines is a multilayer structure. In the multilayer structure, the first layer and the second layer are used as the constituent elements, and the first layer includes one or more selected from the group consisting of conductive particles, conductive fillers, and conductive metal wires. The conductive material has a film thickness of less than 500 nm, and the second layer has a film thickness thicker than the first layer and has a metal as a main component. 如申請專利範圍第8項所記載之附導電性圖案基材，其中，前述表面處理，係為將前述基材之表面能提升之處理。 The conductive pattern substrate according to claim 8, wherein the surface treatment is a treatment for improving the surface energy of the substrate. 如申請專利範圍第8項或第9項所記載之附導電性圖案基材，其中，前述表面處理，係為在前述基材之表面上形成樹脂層之處理。 The conductive pattern substrate according to the eighth or ninth aspect of the invention, wherein the surface treatment is a treatment of forming a resin layer on the surface of the substrate. 如申請專利範圍第8~10項中之任一項所記載之附導電性圖案基材，其中，係在對於兩面而進行了表面處理之前述基材的兩面上，設置有前述由線寬幅未滿10μm之導電性細線所成的圖案。 The conductive pattern substrate according to any one of claims 8 to 10, wherein the surface of the substrate is surface-treated on both sides, and the line width is provided. A pattern formed by conductive thin wires of less than 10 μm. 一種附導電性圖案基材之製造方法，係為製造如 申請專利範圍第8~11項中之任一項所記載的附導電性圖案基材之方法，其特徵為：係在前述第1層之形成工程中，包含有印刷製程，該印刷製程，係包含有在使用導電材料濃度為未滿5%之墨水來形成了線段之後，對於墨水之乾燥製程進行控制，而在前述線段之線寬幅方向兩端處選擇性地堆積導電材料之製程。 A method for manufacturing a conductive pattern substrate, which is manufactured as The method of attaching a conductive pattern substrate according to any one of claims 8 to 11, characterized in that in the forming process of the first layer, a printing process is included, and the printing process is The process of selectively depositing a conductive material at both ends of the line width direction after controlling the drying process of the ink after forming the line segment using the ink having a conductive material concentration of less than 5% is included. 如申請專利範圍第12項所記載之附導電性圖案基材之製造方法，其中，前述墨水之表面張力，係為未滿50mN/m，並且，該墨水之相對於前述基材之接觸角，係為10°~50°之範圍內。 The method for producing a conductive pattern substrate according to claim 12, wherein the surface tension of the ink is less than 50 mN/m, and the contact angle of the ink with respect to the substrate is It is in the range of 10°~50°. 如申請專利範圍第12項或第13項所記載之附導電性圖案基材之製造方法，其中，在前述印刷製程處的前述線段之形成中，係使用噴墨法。 The method for producing a conductive pattern substrate according to claim 12, wherein the inkjet method is used for forming the line segment at the printing process. 如申請專利範圍第14項所記載之附導電性圖案基材之製造方法，其中，係使用噴墨法來對於前述基材而從複數之方向進行複數次的印刷，以形成前述線段。 The method for producing a conductive pattern substrate according to claim 14, wherein the line segment is formed in a plurality of times from the plurality of directions by an inkjet method to form the line segment. 如申請專利範圍第12~15項中之任一項所記載之附導電性圖案基材之製造方法，其中，作為前述墨水之乾燥製程，係使用從使印刷中之前述基材乾燥之製程、在印刷後進行加熱之製程、在印刷後進行送風之製程、以及在印刷後進行光照射之製程，此些之製程中所選擇的1或複數之組合。 The method for producing a conductive pattern substrate according to any one of claims 12 to 15, wherein the drying process of the ink is a process for drying the substrate during printing, A process of heating after printing, a process of supplying air after printing, and a process of performing light irradiation after printing, and a combination of one or more selected in the processes. 如申請專利範圍第12~16項中之任一項所記載 之附導電性圖案基材之製造方法，其中，作為在使前述導電材料選擇性地作了堆積之製程後的後續工程，係藉由從加熱處理、化學處理、光(照射)處理中所選擇的處理，來進行低電阻化。 As described in any of the 12 to 16 patent applications. A method for producing a conductive pattern substrate, wherein the subsequent process after the process of selectively stacking the conductive material is selected from a heat treatment, a chemical treatment, and a light (irradiation) treatment The processing is performed to reduce the resistance. 如申請專利範圍第12~17項中之任一項所記載之附導電性圖案基材之製造方法，其中，作為前述第2層之形成工程，係包含有電化學性之製程。 The method for producing a conductive pattern substrate according to any one of claims 12 to 17, wherein the second layer is formed by an electrochemical process. 如申請專利範圍第18項所記載之附導電性圖案基材之製造方法，其中，前述電化學性之製程，係為無電解電鍍以及電解電鍍之其中一者或者是兩者之組合。 The method for producing a conductive pattern substrate according to claim 18, wherein the electrochemical process is one of electroless plating and electrolytic plating or a combination of the two. 如申請專利範圍第12~19項中之任一項所記載之附導電性圖案基材之製造方法，其中，係在前述第2層之上形成第3層。 The method for producing a conductive pattern substrate according to any one of claims 12 to 19, wherein the third layer is formed on the second layer. 如申請專利範圍第12~20項中之任一項所記載之附導電性圖案基材之製造方法，其中，前述第1層之形成工程，係在前述基材上賦予第1之前述線狀液體，並在使該第1線狀液體乾燥的過程中使該導電材料選擇性地堆積於緣部，而形成藉由包含有該導電材料之2根的線段所構成之第1平行線圖案，接著，在前述基材上，以與前述第1平行線圖案之形成區域相交叉的方式而賦予第2之前述線狀液體，並在使該第2線狀液體乾燥的過程中使該導電材料選擇性地堆積於緣部，而形成藉由包含有該導電材料之2根的線段所構成之第2平行線圖案， 藉由此，來形成由使前述第1平行線圖案與前述第2平行線圖案在至少1個的交點處而相交之圖案所成的前述第1層。 The method for producing a conductive pattern substrate according to any one of claims 12 to 20, wherein the forming of the first layer is performed by applying the first linear shape to the substrate. a liquid, and selectively depositing the conductive material on the edge portion during drying of the first linear liquid to form a first parallel line pattern composed of two line segments including the conductive material. Next, the second linear liquid is applied to the substrate so as to intersect the formation region of the first parallel line pattern, and the conductive material is made in a process of drying the second linear liquid. Selectively deposited on the edge portion to form a second parallel line pattern formed by two line segments including the conductive material. Thereby, the first layer formed by the pattern in which the first parallel line pattern and the second parallel line pattern intersect at at least one intersection is formed. 如申請專利範圍第21項所記載之附導電性圖案基材之製造方法，其中，針對構成前述第2平行線圖案之前述2根的線段間之間隔，係以使在前述第1平行線圖案之形成區域內的平均間隔A和在前述第1平行線圖案之形成區域外的平均間隔B會滿足下述式(1)的方式，來進行調整：0.9≦B/A≦1.1‧‧‧式(1)。 The method for producing a conductive pattern substrate according to claim 21, wherein the interval between the two line segments constituting the second parallel line pattern is such that the first parallel line pattern The average interval A in the formation region and the average interval B outside the formation region of the first parallel line pattern satisfy the following formula (1), and are adjusted: 0.9≦B/A≦1.1‧‧‧ (1). 如申請專利範圍第22項所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係將前述第1平行線圖案之形成區域內的表面能和前述第1平行線圖案之形成區域外的表面能之間之差，設為5mN/m以下。 The method for producing a conductive pattern substrate according to claim 22, wherein the surface energy in the formation region of the first parallel line pattern is adjusted to satisfy the adjustment of the above formula (1). The difference between the surface energies outside the formation region of the first parallel line pattern is set to 5 mN/m or less. 如申請專利範圍第22項所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係將塗布前述第1線狀液體中所包含的導電材料並使其乾燥之平塗面的表面能和前述第1平行線圖案之形成區域外的表面能之間之差，設為5mN/m以下。 The method for producing a conductive pattern substrate according to claim 22, wherein the conductive material contained in the first linear liquid is applied to adjust the expression (1). The difference between the surface energy of the flat surface to be dried and the surface energy outside the formation region of the first parallel line pattern is 5 mN/m or less. 如申請專利範圍第22項所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係將在前述第1平行線圖案之形成區域內的前述第2線狀液體之接觸角和在前述第1平行線圖案之形成區域外 的前述第2線狀液體之接觸角之間之差，設為10°以下。 The method for producing a conductive pattern substrate according to claim 22, wherein the adjustment to satisfy the expression (1) is performed in the formation region of the first parallel line pattern. 2 contact angle of the linear liquid and outside the formation area of the first parallel line pattern The difference between the contact angles of the second linear liquids is set to 10 or less. 如申請專利範圍第22項所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係將在塗布前述第1線狀液體中所包含的導電材料並使其乾燥之平塗面處的前述第2線狀液體之接觸角和在前述第1平行線圖案之形成區域外的前述第2線狀液體之接觸角之間之差，設為10°以下。 The method for producing a conductive pattern substrate according to claim 22, wherein the conductive material contained in the first linear liquid is applied to adjust the expression (1). And the difference between the contact angle of the second linear liquid at the flat surface of the dried flat coating surface and the contact angle of the second linear liquid outside the formation region of the first parallel line pattern is set to 10°. the following. 如申請專利範圍第22項所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係將在前述第1平行線圖案之形成區域外的前述第2線狀液體中之溶劑中的沸點為最高之溶劑的接觸角，設為6°以下。 The method for producing a conductive pattern substrate according to claim 22, wherein the adjustment to satisfy the expression (1) is performed in addition to the formation region of the first parallel line pattern. The contact angle of the solvent having the highest boiling point among the solvents in the linear liquid is set to 6 or less. 如申請專利範圍第22項所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係使在前述第1平行線圖案之形成區域內的前述第2線狀液體之每單位長度之液體賦予量、和在前述第1平行線圖案之形成區域外的前述第2線狀液體之每單位長度之液體賦予量，此兩者互為相異。 The method for producing a conductive pattern substrate according to claim 22, wherein the adjustment in the expression (1) is performed in the formation region of the first parallel line pattern. The liquid application amount per unit length of the linear liquid and the liquid application amount per unit length of the second linear liquid outside the formation region of the first parallel line pattern are different from each other. 如申請專利範圍第22項所記載之附導電性圖案基材之製造方法，其中，作為用以滿足前述式(1)之調整，係在形成了前述第1平行線圖案之後，於賦予前述第2線狀液體之前，將包含前述第1平行線圖案之形成區域內的區域作洗淨。 The method for producing a conductive pattern substrate according to claim 22, wherein the adjustment to satisfy the expression (1) is performed after the first parallel line pattern is formed. Before the 2-line liquid, the region in the formation region including the first parallel line pattern is washed. 如申請專利範圍第29項所記載之附導電性圖案 基材之製造方法，其中，作為前述洗淨，係進行從由加熱所致之洗淨、由電磁波所致之洗淨、由溶劑所致之洗淨、由氣體所致之洗淨以及由電漿所致之洗淨中所選擇的1種或2種以上之組合的洗淨。 The conductive pattern as described in claim 29 of the patent application scope In the method for producing a substrate, the cleaning is performed by washing by heating, washing by electromagnetic waves, washing by a solvent, washing by a gas, and electricity. Washing of one or a combination of two or more selected from the washing by the slurry. 如申請專利範圍第12~30項中之任一項所記載之附導電性圖案基材之製造方法，其中，係以與前述導電性圖案之至少一部分相接觸的方式，而形成包含有集電線或導電材料之平塗圖案。 The method for producing a conductive pattern substrate according to any one of claims 12 to 30, wherein the method of forming a current collecting wire is formed so as to be in contact with at least a part of the conductive pattern. Or a flat coating of conductive material. 一種構造體，係為於表面上具備有導電性圖案之構造體，其特徵為：前述導電性圖案，係為由線寬幅未滿10μm之導電性細線所成的圖案，前述細線之至少一部分係成為多層構造，該多層構造，係以第1層和第2層作為構成要素，該第1層，係包含有從導電性粒子、導電性填充物、導電性金屬線所選擇的1種或2種以上之導電材料，且膜厚未滿500nm，該第2層，其膜厚係為較前述第1層更厚，並以金屬作為主成分。 A structure comprising a structure having a conductive pattern on a surface thereof, wherein the conductive pattern is a pattern formed of conductive thin lines having a line width of less than 10 μm, and at least a part of the thin line The multilayer structure is composed of a first layer and a second layer, and the first layer includes one selected from conductive particles, a conductive filler, and a conductive metal wire. Two or more kinds of conductive materials having a film thickness of less than 500 nm, and the second layer having a film thickness thicker than the first layer and having a metal as a main component. 一種構造體之製造方法，係為製造如申請專利範圍第32項所記載之構造體之製造方法，其特徵為：係使用有在被作了表面處理之表面上而設置有導電性圖案之附導電性圖案基材，前述導電性圖案，係為由線寬幅未滿10μm之導電性細線所成的圖案， 前述細線之至少一部分係成為多層構造，該多層構造，係以第1層和第2層作為構成要素，該第1層，係包含有從導電性粒子、導電性填充物、導電性金屬線所選擇的1種或2種以上之導電材料，且膜厚未滿500nm，該第2層，其膜厚係為較前述第1層更厚，並以金屬作為主成分，該構造體之製造方法，係在構造體表面上，貼合前述附導電性圖案基材，或者是從前述附導電性圖案基材而將導電性圖案部作轉印，來製造出於表面上具有導電性圖案之構造體。 A manufacturing method of a structure for manufacturing a structure according to claim 32, wherein a method of providing a conductive pattern on a surface to be surface-treated is used. In the conductive pattern substrate, the conductive pattern is a pattern formed of conductive thin lines having a line width of less than 10 μm. At least a part of the thin line has a multilayer structure in which a first layer and a second layer are used as constituent elements, and the first layer includes conductive particles, a conductive filler, and a conductive metal wire. One or two or more kinds of conductive materials are selected, and the film thickness is less than 500 nm, and the thickness of the second layer is thicker than the first layer, and a metal is used as a main component. The conductive pattern substrate is bonded to the surface of the structure, or the conductive pattern portion is transferred from the conductive pattern substrate to produce a structure having a conductive pattern on the surface. body.