TW201616687A - 覆晶式led封裝體 - Google Patents

覆晶式led封裝體 Download PDF

Info

Publication number
TW201616687A
TW201616687A TW103139012A TW103139012A TW201616687A TW 201616687 A TW201616687 A TW 201616687A TW 103139012 A TW103139012 A TW 103139012A TW 103139012 A TW103139012 A TW 103139012A TW 201616687 A TW201616687 A TW 201616687A
Authority
TW
Taiwan
Prior art keywords
flip
electrode
led package
chip
semiconductor layer
Prior art date
Application number
TW103139012A
Other languages
English (en)
Other versions
TWI573296B (zh
Inventor
林厚德
張超雄
陳濱全
陳隆欣
曾文良
Original Assignee
榮創能源科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 榮創能源科技股份有限公司 filed Critical 榮創能源科技股份有限公司
Publication of TW201616687A publication Critical patent/TW201616687A/zh
Application granted granted Critical
Publication of TWI573296B publication Critical patent/TWI573296B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

一種覆晶式LED封裝體，包括LED晶粒以及將所述LED晶粒封裝其內的封裝膠體，LED晶粒具有P電極和N電極，所述P電極和N電極均外露于所述封裝膠體之外。

Description

覆晶式LED封裝體
本發明涉及一種封裝體，特別是指一種覆晶式LED封裝體。
隨著LED產業不斷發展，覆晶式發光二極體以其封裝體積小、發光面積大等優勢正逐步替代常規發光二極體，而廣泛應用於LED照明產業。
目前高功率的覆晶式LED封裝體包括一基板及形成在所述基板上的半導體結構，為了提高覆晶式LED封裝體的發光亮度，會在覆晶式LED封裝體的半導體結構上形成多個槽狀結構區域並配合負載的電極，此種覆晶式LED封裝體一旦形成，製造過程無法重工、結構無法改變，當需要將其運用於不同亮度及功率的場合時，只有重新製作，造成成本提升、資源的浪費。
有鑑於此，有必要提供一種結構簡單、成本低廉的覆晶式LED封裝體。
一種覆晶式LED封裝體，包括LED晶粒以及將所述LED晶粒封裝其內的封裝膠體，LED晶粒具有P電極和N電極，所述P電極和N電極均外露于所述封裝膠體之外。
如此設置的覆晶式LED封裝體因封裝膠內的多個LED晶粒的P電極和N電極均外露，如此，在不同強度及功率的應用場合，藉由該等P電極和N電極與不同功率的電路連接方式的電路板配合而實現覆晶式LED晶粒的不同功率及不同亮度。當然，可以理解的，也可以藉由選擇不同數量的LED晶粒70與同一電路板的連接來實現LED封裝體的不同功率及不同亮度。如此，便提升了LED封裝體的通用性，進而降低了其製造成本。
圖1係本發明第一實施例中覆晶式LED封裝體與電路板配合的正視圖。
圖2係圖1所示覆晶式LED封裝體的仰視圖。
圖3係圖1所示覆晶式LED封裝體中晶粒結構的剖視圖。
圖4係本發明第二實施例中覆晶式LED封裝體與電路板配合的正視圖。
如圖1所示，為本發明第一實施例覆晶式LED封裝體100與電路板相配合的正視圖。該覆晶式LED封裝體100包括一封裝膠體60、包覆于封裝膠體內部的LED晶粒70。所述覆晶式LED封裝體100與一電路板80電性連接。
請同時參考圖2，所述封裝膠體60為環氧樹脂、聚碳酸酯等透明材料。所述封裝膠體60包覆多個所述LED晶粒70進而形成一覆晶式LED封裝體100。所述的LED晶粒70彼此之間藉由透明封裝膠體60粘結形成單一封裝組件。可以理解的，在本發明中，所述封裝膠體60中可包含螢光粉用於改變出光光效。每一LED晶粒70包括一個P電極231以及一個N電極211。所述P電極231及N電極211相對於覆晶式LED封裝體100的出光面設置且均裸露于封裝膠體60之外。每一P電231和每一N電極211電連接至電路板80。
如此設置的覆晶式LED封裝體100因封裝膠體60內的多個LED晶粒70的P電極231和N電極211均外露，如此，在不同強度及功率的應用場合，藉由該等P電極231和N電極211與不同功率的電路連接方式的電路板配合而實現覆晶式LED晶粒100的不同功率及不同亮度。當然，可以理解的，也可以藉由選擇不同數量的LED晶粒70與同一電路板的連接來實現LED封裝體100的不同功率及不同亮度。如此，便提升了LED封裝體100的通用性，進而降低了其製造成本。
本實施例展示了一串聯式電路板80與LED封裝體100的配合。所述電路板80上形成有正極81和負極82。所述正極81和負極82的數量為多個，且所述每一P電極231對應連接至正極81，所述每一N電極211對應連接至每一負極82。
所述LED晶粒70為覆晶式結構，其彼此之間藉由封裝膠體60粘結成一封裝元件，以滿足高效率高功率的出光需求，在本實施例中，所述覆晶式LED封裝體100中的LED晶粒70的數量為兩個，可以理解的是，為了滿足更大功率的發光需求，所述LED晶粒70的數量可以根據需要選擇。
請同時參考圖3，所述每一LED晶粒70包括一基板10以及形成在基板10之上的半導體層20。
所述基板10為藍寶石基板或為其他透明材料製成，以便於光線的出設。
所述半導體層20包括依次自上而下排列的N型半導體層21、發光活性層22及P型半導體層23。所述P型半導體層23上形成有P電極231，N型半導體層21上形成有N電極211。
所述N型半導體層21和P型半導體層23的材料為氮化鎵（GaN）。N型半導體層21主要提供電子，P型半導體層23主要提供電洞。發光活性層22為氮化鎵基材料，主要使電子和電洞聚集而產生光。
可以理解的，在上述半導體層20中，出於晶粒結構的設計需要，可在半導體層20中設置緩衝層、歐姆接觸層、擴散層、反射層等，此結構為本領域的常規技術手段，不再贅述。
如圖4所示，本發明第二實施例中覆晶式LED封裝體100a，其與第一實施例覆晶式LED封裝體100相似，其不同之處在於：第二實施例中展示了一並聯式電路板80a與LED封裝體100的配合，所述電路板80a為一並聯式電路結構，其包括正極81a和負極82a，所述正極81a和負極82a的數量為多個，且所述每一正極81a和每一負極82a分別對應與LED晶粒70的每一P電極231和每一N電極211連接。
10‧‧‧基板
20‧‧‧半導體層
21‧‧‧N型半導體層
22‧‧‧發光活性層
23‧‧‧P型半導體層
231‧‧‧P電極
211‧‧‧N電極
60‧‧‧封裝膠體
70‧‧‧LED晶粒
80、80a‧‧‧電路板
81、81a‧‧‧正極
82、82a‧‧‧負極
100、100a‧‧‧覆晶式LED封裝體
無
231‧‧‧P電極
211‧‧‧N電極
60‧‧‧封裝膠體
70‧‧‧LED晶粒
80‧‧‧電路板
81‧‧‧正極
82‧‧‧負極
100‧‧‧覆晶式LED封裝體

Claims (6)

  1. 一種覆晶式LED封裝體，包括LED晶粒以及將所述LED晶粒封裝其內的封裝膠體，LED晶粒具有P電極和N電極，其改良在於：所述P電極和N電極均外露于所述封裝膠體之外。
  2. 如申請專利範圍第1項所述覆晶式LED封裝體，其中：所述LED晶粒為覆晶式結構。
  3. 如申請專利範圍第1項所述覆晶式LED封裝體，其中：所述LED晶粒包括有基板和形成於基板上的半導體層。
  4. 如申請專利範圍第3項所述覆晶式LED封裝體，其中：所述半導體層包括自基板之上依次排列的N型半導體層、發光活性層和P型半導體層。
  5. 如申請專利範圍第1項所述覆晶式LED封裝體，其中：所述封裝膠體為為環氧樹脂、聚碳酸酯等透光性能良好的透明材料。
  6. 如申請專利範圍第1項所述覆晶式LED封裝體，其中：所述封裝膠體中還包括有螢光粉。
TW103139012A 2014-10-20 2014-11-11 覆晶式led封裝體 TWI573296B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410556311.6A CN105591006A (zh) 2014-10-20 2014-10-20 覆晶式led封装体

Publications (2)

Publication Number Publication Date
TW201616687A true TW201616687A (zh) 2016-05-01
TWI573296B TWI573296B (zh) 2017-03-01

Family

ID=55749659

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103139012A TWI573296B (zh) 2014-10-20 2014-11-11 覆晶式led封裝體

Country Status (3)

Country Link
US (1) US20160111400A1 (zh)
CN (1) CN105591006A (zh)
TW (1) TWI573296B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016106571A1 (de) * 2016-04-11 2017-10-12 Osram Opto Semiconductors Gmbh Lichtemittierender Halbleiterchip, lichtemittierendes Bauelement und Verfahren zur Herstellung eines lichtemittierenden Bauelements
CN105895785B (zh) * 2016-04-25 2018-06-29 湘能华磊光电股份有限公司 倒装led芯片集成封装的光源组件结构及其制作方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8999736B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic system
KR100828891B1 (ko) * 2006-02-23 2008-05-09 엘지이노텍 주식회사 Ｌｅｄ 패키지
KR100956888B1 (ko) * 2008-01-24 2010-05-11 삼성전기주식회사 발광 다이오드 패키지 및 그 제조 방법
TW201010122A (en) * 2008-08-21 2010-03-01 Univ Nat Central Flip-chip light-emitting diode having the epitaxy strengthening layer, and fabrication method thereof
TWI390777B (zh) * 2009-07-23 2013-03-21 Edison Opto Corp 發光二極體組件之製造方法
TWI393273B (zh) * 2009-08-27 2013-04-11 Edison Opto Corp 發光二極體組件之製造方法
CN101982883A (zh) * 2010-09-01 2011-03-02 晶科电子（广州）有限公司 一种由倒装发光单元阵列组成的发光器件及其制造方法
US8652860B2 (en) * 2011-01-09 2014-02-18 Bridgelux, Inc. Packaging photon building blocks having only top side connections in a molded interconnect structure
CN103534822A (zh) * 2011-04-20 2014-01-22 株式会社Elm 发光装置及其制造方法
RU2597071C2 (ru) * 2011-05-24 2016-09-10 Конинклейке Филипс Н.В. МЕТАЛЛИЧЕСКИЙ НАПОЛНИТЕЛЬ, РАЗДЕЛЯЮЩИЙ СЛОИ р- И n-ТИПА, ДЛЯ СВЕТОИЗЛУЧАЮЩИХ ДИОДОВ, МОНТИРУЕМЫХ МЕТОДОМ ПЕРЕВЕРНУТОГО КРИСТАЛЛА
US9322515B2 (en) * 2011-06-29 2016-04-26 Korry Electronics Co. Apparatus for controlling the re-distribution of light emitted from a light-emitting diode
JP2013153068A (ja) * 2012-01-25 2013-08-08 Shinko Electric Ind Co Ltd 配線基板、発光装置及び配線基板の製造方法
CN104094424B (zh) * 2012-02-10 2016-12-21 皇家飞利浦有限公司 形成芯片级led封装的模制透镜及其制造方法
US20130207136A1 (en) * 2012-02-13 2013-08-15 Hsin-Hui Cheng Chip-on-board leds package with different wavelengths
CN202616230U (zh) * 2012-04-28 2012-12-19 天津三安光电有限公司 发光二极管封装结构
CN103531670B (zh) * 2012-07-06 2016-09-07 哈尔滨化兴软控科技有限公司 发光二极管制造方法
DE102013208387A1 (de) * 2013-05-07 2014-11-13 Robert Bosch Gmbh Silber-Komposit-Sinterpasten für Niedertemperatur Sinterverbindungen
EP2999014B1 (en) * 2013-05-13 2020-01-22 Seoul Semiconductor Co., Ltd. Manufacturing method of light-emitting device package
TWI626395B (zh) * 2013-06-11 2018-06-11 晶元光電股份有限公司 發光裝置
US20150060911A1 (en) * 2013-09-05 2015-03-05 Unistars Corporation Optoelectronic semiconductor device and fabricating method thereof
WO2015033557A1 (ja) * 2013-09-05 2015-03-12 パナソニックＩｐマネジメント株式会社 発光装置
CN103872223A (zh) * 2014-01-26 2014-06-18 上海瑞丰光电子有限公司 一种led晶片级封装方法
JP6303805B2 (ja) * 2014-05-21 2018-04-04 日亜化学工業株式会社 発光装置及びその製造方法
US9691949B2 (en) * 2014-05-30 2017-06-27 Cree, Inc. Submount based light emitter components and methods

Also Published As

Publication number Publication date
TWI573296B (zh) 2017-03-01
CN105591006A (zh) 2016-05-18
US20160111400A1 (en) 2016-04-21

Similar Documents

Publication Publication Date Title
TWI636589B (zh) 發光二極體模組及其製作方法
JP4918238B2 (ja) 発光装置
US8735913B2 (en) Light emitting semiconductor structure
US9281437B2 (en) Light emitting device, and method for fabricating the same
TWI580079B (zh) 發光二極體封裝結構及發光二極體模組
US9257614B2 (en) Warm white LED with stacked wafers and fabrication method thereof
TWI644454B (zh) Light-emitting diode structure
TWI573296B (zh) 覆晶式led封裝體
KR20140004351A (ko) 발광 다이오드 패키지
US10199540B2 (en) Light emitting diode, light emitting diode package including same, and lighting system including same
KR102401828B1 (ko) 발광소자 패키지
KR102131853B1 (ko) 발광다이오드 어레이
TW201637242A (zh) 發光二極體封裝
US10510925B2 (en) Light-emitting device and lighting system comprising same
KR100954858B1 (ko) 고휘도 엘이디 패키지 및 그 제조 방법
US8952398B2 (en) LED lighting module
KR20120064838A (ko) 발광다이오드 패키지 및 그 제조방법
KR100450514B1 (ko) 백색 발광 다이오드
WO2013027413A1 (ja) 保護素子及びこれを用いた発光装置
KR20080054083A (ko) 전면 발광형 ｌｅｄ 패키지 및 그 제조방법
KR100801193B1 (ko) 적층형 발광다이오드 및 그 제조 방법
KR102201186B1 (ko) 발광 장치
TWM496847U (zh) 發光模組
KR102015127B1 (ko) 질화물계 발광소자
TW201405869A (zh) 一種發光元件