TW201614867A - Thin-film flip-chip light emitting diode having dual sub-mounts and method for manufacturing the same - Google Patents

Thin-film flip-chip light emitting diode having dual sub-mounts and method for manufacturing the same

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Publication number
TW201614867A
TW201614867A TW103135234A TW103135234A TW201614867A TW 201614867 A TW201614867 A TW 201614867A TW 103135234 A TW103135234 A TW 103135234A TW 103135234 A TW103135234 A TW 103135234A TW 201614867 A TW201614867 A TW 201614867A
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
light emitting
sub
mounts
thin
Prior art date
Application number
TW103135234A
Other languages
Chinese (zh)
Other versions
TWI583025B (en
Inventor
Yi-Fan Li
Kuan-Chieh Huang
Shao-Ying Ting
Jing-En Huang
Original Assignee
Genesis Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genesis Photonics Inc filed Critical Genesis Photonics Inc
Priority to TW107114351A priority Critical patent/TW201828501A/en
Priority to TW103135234A priority patent/TWI583025B/en
Publication of TW201614867A publication Critical patent/TW201614867A/en
Application granted granted Critical
Publication of TWI583025B publication Critical patent/TWI583025B/en

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Abstract

The invention relates to a thin-film flip-chip light emitting diode having dual sub-mounts and a method for manufacturing the same. It comprises the steps of depositing a first semiconductor layer on a substrate; forming a light emitting structure layer on the first semiconductor layer; forming a second semiconductor layer on the light emitting structure layer, wherein the second semiconductor layer is electrically opposite to the first semiconductor layer; forming a first contact electrode and a second contact electrode on the first semiconductor layer and the second semiconductor layer respectively; forming a first sub-mount on the first and second contact electrodes and removing the substrate; adhering a transparent second sub-mount to the first semiconductor layer through an adhesive layer, wherein a first optical film is disposed between the second sub-mount and the first semiconductor layer. Thereby a thin-film flip-chip light emitting diode having dual sub-mounts is prepared. Accordingly, the present invention can effectively improve luminous efficiency.
TW103135234A 2014-10-09 2014-10-09 Thin-film flip-chip light emitting diode having dual sub-mounts and method for manufacturing the same TWI583025B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW107114351A TW201828501A (en) 2014-10-09 2014-10-09 Light emitting device
TW103135234A TWI583025B (en) 2014-10-09 2014-10-09 Thin-film flip-chip light emitting diode having dual sub-mounts and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103135234A TWI583025B (en) 2014-10-09 2014-10-09 Thin-film flip-chip light emitting diode having dual sub-mounts and method for manufacturing the same

Publications (2)

Publication Number Publication Date
TW201614867A true TW201614867A (en) 2016-04-16
TWI583025B TWI583025B (en) 2017-05-11

Family

ID=56361296

Family Applications (2)

Application Number Title Priority Date Filing Date
TW107114351A TW201828501A (en) 2014-10-09 2014-10-09 Light emitting device
TW103135234A TWI583025B (en) 2014-10-09 2014-10-09 Thin-film flip-chip light emitting diode having dual sub-mounts and method for manufacturing the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW107114351A TW201828501A (en) 2014-10-09 2014-10-09 Light emitting device

Country Status (1)

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TW (2) TW201828501A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI736756B (en) * 2018-04-03 2021-08-21 晶元光電股份有限公司 Semiconductor device
TWI758212B (en) * 2018-04-03 2022-03-11 晶元光電股份有限公司 Semiconductor device
TWI778917B (en) * 2018-04-03 2022-09-21 晶元光電股份有限公司 Semiconductor device
TWI797044B (en) * 2018-04-03 2023-03-21 晶元光電股份有限公司 Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7626210B2 (en) * 2006-06-09 2009-12-01 Philips Lumileds Lighting Company, Llc Low profile side emitting LED
US7791093B2 (en) * 2007-09-04 2010-09-07 Koninklijke Philips Electronics N.V. LED with particles in encapsulant for increased light extraction and non-yellow off-state color
US20110031516A1 (en) * 2009-08-07 2011-02-10 Koninklijke Philips Electronics N.V. Led with silicone layer and laminated remote phosphor layer

Also Published As

Publication number Publication date
TW201828501A (en) 2018-08-01
TWI583025B (en) 2017-05-11

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