TW201614379A - Digital grey tone lithography for 3D pattern formation - Google Patents
Digital grey tone lithography for 3D pattern formationInfo
- Publication number
- TW201614379A TW201614379A TW104124773A TW104124773A TW201614379A TW 201614379 A TW201614379 A TW 201614379A TW 104124773 A TW104124773 A TW 104124773A TW 104124773 A TW104124773 A TW 104124773A TW 201614379 A TW201614379 A TW 201614379A
- Authority
- TW
- Taiwan
- Prior art keywords
- dose
- predetermined
- writing pixel
- pixel location
- predetermined dose
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0037—Production of three-dimensional images
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing Optical Record Carriers (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462032491P | 2014-08-01 | 2014-08-01 | |
US62/032,491 | 2014-08-01 | ||
US201462094044P | 2014-12-18 | 2014-12-18 | |
US62/094,044 | 2014-12-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201614379A true TW201614379A (en) | 2016-04-16 |
TWI610145B TWI610145B (zh) | 2018-01-01 |
Family
ID=55179899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104124773A TWI610145B (zh) | 2014-08-01 | 2015-07-30 | 用於3d圖案成形的數位灰色調微影技術 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9383649B2 (zh) |
JP (1) | JP7111466B2 (zh) |
KR (1) | KR102427154B1 (zh) |
CN (1) | CN106575604B (zh) |
TW (1) | TWI610145B (zh) |
WO (1) | WO2016018598A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10459341B2 (en) | 2018-01-30 | 2019-10-29 | Applied Materials, Inc. | Multi-configuration digital lithography system |
US10684555B2 (en) * | 2018-03-22 | 2020-06-16 | Applied Materials, Inc. | Spatial light modulator with variable intensity diodes |
US10495979B1 (en) * | 2019-02-19 | 2019-12-03 | Applied Materials, Inc. | Half tone scheme for maskless lithography |
US10571809B1 (en) * | 2019-02-19 | 2020-02-25 | Applied Materials, Inc. | Half tone scheme for maskless lithography |
KR20220048040A (ko) * | 2019-08-30 | 2022-04-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 마스크리스 리소그래피를 위한 다중 톤 방식 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6238852B1 (en) * | 1999-01-04 | 2001-05-29 | Anvik Corporation | Maskless lithography system and method with doubled throughput |
AU5261200A (en) | 1999-05-20 | 2000-12-12 | Micronic Laser Systems Ab | A method for error reduction in lithography |
JP2003173949A (ja) * | 2000-12-04 | 2003-06-20 | Nsk Ltd | 露光装置 |
US7095484B1 (en) * | 2001-06-27 | 2006-08-22 | University Of South Florida | Method and apparatus for maskless photolithography |
SE0104238D0 (sv) * | 2001-12-14 | 2001-12-14 | Micronic Laser Systems Ab | Method and apparatus for patterning a workpiece |
JP4597675B2 (ja) * | 2002-08-24 | 2010-12-15 | マスクレス・リソグラフィー・インコーポレーテッド | 連続直接書込み光リソグラフィ |
US6831768B1 (en) * | 2003-07-31 | 2004-12-14 | Asml Holding N.V. | Using time and/or power modulation to achieve dose gray-scaling in optical maskless lithography |
JP2006011371A (ja) * | 2004-05-26 | 2006-01-12 | Fuji Photo Film Co Ltd | パターン形成方法 |
US7123348B2 (en) * | 2004-06-08 | 2006-10-17 | Asml Netherlands B.V | Lithographic apparatus and method utilizing dose control |
US7407252B2 (en) | 2004-07-01 | 2008-08-05 | Applied Materials, Inc. | Area based optical proximity correction in raster scan printing |
JP2006128194A (ja) | 2004-10-26 | 2006-05-18 | Canon Inc | 露光装置及びデバイス製造方法 |
US7496882B2 (en) * | 2004-12-22 | 2009-02-24 | Asml Netherlands B.V. | Optimization to avoid sidelobe printing |
JP2008076590A (ja) * | 2006-09-20 | 2008-04-03 | Fujifilm Corp | 描画位置測定方法および装置 |
US8253923B1 (en) * | 2008-09-23 | 2012-08-28 | Pinebrook Imaging Technology, Ltd. | Optical imaging writer system |
US9405203B2 (en) * | 2008-09-23 | 2016-08-02 | Applied Materials, Inc. | Pixel blending for multiple charged-particle beam lithography |
JP5373518B2 (ja) * | 2009-09-15 | 2013-12-18 | 大日本スクリーン製造株式会社 | データ変換方法、描画システムおよびプログラム |
JP2011249655A (ja) * | 2010-05-28 | 2011-12-08 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP2013197337A (ja) | 2012-03-21 | 2013-09-30 | Toshiba Corp | 露光方法、及び露光システム |
-
2015
- 2015-07-13 WO PCT/US2015/040121 patent/WO2016018598A1/en active Application Filing
- 2015-07-13 KR KR1020177005836A patent/KR102427154B1/ko active IP Right Grant
- 2015-07-13 JP JP2017505154A patent/JP7111466B2/ja active Active
- 2015-07-13 CN CN201580040272.7A patent/CN106575604B/zh not_active Expired - Fee Related
- 2015-07-17 US US14/802,906 patent/US9383649B2/en active Active
- 2015-07-30 TW TW104124773A patent/TWI610145B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2017523476A (ja) | 2017-08-17 |
KR20170038891A (ko) | 2017-04-07 |
CN106575604B (zh) | 2020-09-15 |
JP7111466B2 (ja) | 2022-08-02 |
KR102427154B1 (ko) | 2022-07-28 |
US9383649B2 (en) | 2016-07-05 |
TWI610145B (zh) | 2018-01-01 |
US20160033867A1 (en) | 2016-02-04 |
WO2016018598A1 (en) | 2016-02-04 |
CN106575604A (zh) | 2017-04-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |