TW201614379A - Digital grey tone lithography for 3D pattern formation - Google Patents

Digital grey tone lithography for 3D pattern formation

Info

Publication number
TW201614379A
TW201614379A TW104124773A TW104124773A TW201614379A TW 201614379 A TW201614379 A TW 201614379A TW 104124773 A TW104124773 A TW 104124773A TW 104124773 A TW104124773 A TW 104124773A TW 201614379 A TW201614379 A TW 201614379A
Authority
TW
Taiwan
Prior art keywords
dose
predetermined
writing pixel
pixel location
predetermined dose
Prior art date
Application number
TW104124773A
Other languages
English (en)
Other versions
TWI610145B (zh
Inventor
Christopher Dennis Bencher
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201614379A publication Critical patent/TW201614379A/zh
Application granted granted Critical
Publication of TWI610145B publication Critical patent/TWI610145B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0037—Production of three-dimensional images

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Optical Record Carriers (AREA)
TW104124773A 2014-08-01 2015-07-30 用於３ｄ圖案成形的數位灰色調微影技術 TWI610145B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462032491P 2014-08-01 2014-08-01
US62/032,491 2014-08-01
US201462094044P 2014-12-18 2014-12-18
US62/094,044 2014-12-18

Publications (2)

Publication Number Publication Date
TW201614379A true TW201614379A (en) 2016-04-16
TWI610145B TWI610145B (zh) 2018-01-01

Family

ID=55179899

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104124773A TWI610145B (zh) 2014-08-01 2015-07-30 用於３ｄ圖案成形的數位灰色調微影技術

Country Status (6)

Country Link
US (1) US9383649B2 (zh)
JP (1) JP7111466B2 (zh)
KR (1) KR102427154B1 (zh)
CN (1) CN106575604B (zh)
TW (1) TWI610145B (zh)
WO (1) WO2016018598A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10459341B2 (en) 2018-01-30 2019-10-29 Applied Materials, Inc. Multi-configuration digital lithography system
US10684555B2 (en) * 2018-03-22 2020-06-16 Applied Materials, Inc. Spatial light modulator with variable intensity diodes
US10495979B1 (en) * 2019-02-19 2019-12-03 Applied Materials, Inc. Half tone scheme for maskless lithography
US10571809B1 (en) * 2019-02-19 2020-02-25 Applied Materials, Inc. Half tone scheme for maskless lithography
KR20220048040A (ko) * 2019-08-30 2022-04-19 어플라이드 머티어리얼스, 인코포레이티드 마스크리스 리소그래피를 위한 다중 톤 방식

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6238852B1 (en) * 1999-01-04 2001-05-29 Anvik Corporation Maskless lithography system and method with doubled throughput
AU5261200A (en) 1999-05-20 2000-12-12 Micronic Laser Systems Ab A method for error reduction in lithography
JP2003173949A (ja) * 2000-12-04 2003-06-20 Nsk Ltd 露光装置
US7095484B1 (en) * 2001-06-27 2006-08-22 University Of South Florida Method and apparatus for maskless photolithography
SE0104238D0 (sv) * 2001-12-14 2001-12-14 Micronic Laser Systems Ab Method and apparatus for patterning a workpiece
JP4597675B2 (ja) * 2002-08-24 2010-12-15 マスクレス・リソグラフィー・インコーポレーテッド 連続直接書込み光リソグラフィ
US6831768B1 (en) * 2003-07-31 2004-12-14 Asml Holding N.V. Using time and/or power modulation to achieve dose gray-scaling in optical maskless lithography
JP2006011371A (ja) * 2004-05-26 2006-01-12 Fuji Photo Film Co Ltd パターン形成方法
US7123348B2 (en) * 2004-06-08 2006-10-17 Asml Netherlands B.V Lithographic apparatus and method utilizing dose control
US7407252B2 (en) 2004-07-01 2008-08-05 Applied Materials, Inc. Area based optical proximity correction in raster scan printing
JP2006128194A (ja) 2004-10-26 2006-05-18 Canon Inc 露光装置及びデバイス製造方法
US7496882B2 (en) * 2004-12-22 2009-02-24 Asml Netherlands B.V. Optimization to avoid sidelobe printing
JP2008076590A (ja) * 2006-09-20 2008-04-03 Fujifilm Corp 描画位置測定方法および装置
US8253923B1 (en) * 2008-09-23 2012-08-28 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US9405203B2 (en) * 2008-09-23 2016-08-02 Applied Materials, Inc. Pixel blending for multiple charged-particle beam lithography
JP5373518B2 (ja) * 2009-09-15 2013-12-18 大日本スクリーン製造株式会社 データ変換方法、描画システムおよびプログラム
JP2011249655A (ja) * 2010-05-28 2011-12-08 Renesas Electronics Corp 半導体装置の製造方法
JP2013197337A (ja) 2012-03-21 2013-09-30 Toshiba Corp 露光方法、及び露光システム

Also Published As

Publication number Publication date
JP2017523476A (ja) 2017-08-17
KR20170038891A (ko) 2017-04-07
CN106575604B (zh) 2020-09-15
JP7111466B2 (ja) 2022-08-02
KR102427154B1 (ko) 2022-07-28
US9383649B2 (en) 2016-07-05
TWI610145B (zh) 2018-01-01
US20160033867A1 (en) 2016-02-04
WO2016018598A1 (en) 2016-02-04
CN106575604A (zh) 2017-04-19

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees