TW201541670A - 波長變換構件及其製造方法 - Google Patents
波長變換構件及其製造方法 Download PDFInfo
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- TW201541670A TW201541670A TW104112919A TW104112919A TW201541670A TW 201541670 A TW201541670 A TW 201541670A TW 104112919 A TW104112919 A TW 104112919A TW 104112919 A TW104112919 A TW 104112919A TW 201541670 A TW201541670 A TW 201541670A
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Abstract
本發明之波長變換構件之製造方法具備如下步驟:準備元件配置基材,該元件配置基材具備基材及沿與基材之厚度方向正交之方向隔開間隔而配置於基材上之複數個螢光體陶瓷元件;使複數個螢光體陶瓷元件埋入於含有無機物之硬化性層;使硬化性層硬化而獲得被覆層;及以包含至少一個螢光體陶瓷元件之方式將被覆層及基材沿厚度方向切斷。
Description
本發明係關於一種波長變換構件及其製造方法,詳細而言係關於波長變換構件之製造方法及藉由該方法製造之波長變換構件。
一般而言,發光二極體裝置具備安裝於基板之表面且發出藍色光之LED(發光二極體元件)、可將藍色光變換為黃色光且設置於LED上之螢光體層、及將LED密封之密封層。此種發光二極體裝置係自被密封層密封之LED進行發光,藉由透過螢光體層之藍色光與於螢光體層中藍色光之一部分經波長變換而成之黃色光之混色而發出白色光。
作為製造此種發光二極體裝置之方法,提出有以下方法(例如參照專利文獻1)。
即,提出有如下方法:首先,於透明密封層設置凹部,藉由灌注對該凹部注入硬化性螢光體組合物並使其硬化,藉此製作具備透明密封層及螢光體層之波長變換片材,繼而於波長變換片材之螢光體層之表面埋設LED。
[專利文獻1]日本專利特開2013一187227公報
然而,發光二極體裝置或半導體雷射裝置等半導體發光裝置存
在裝備高功率(高輸出)之光源之情況。於利用波長變換片材對此種高功率之光進行波長變換之情形時,波長變換片材必須具有高度之耐熱性。因此,研究對波長變換片材使用耐熱性優異之螢光體陶瓷。
然而,螢光體陶瓷存在如下不良情況:由於將螢光體在高溫(例如1000℃以上)下進行燒結,故而無法如上述專利文獻1之方法般藉由灌注螢光體組合物並使其硬化而形成。
本發明之目的在於提供一種可簡易且工業性地製造波長變換構件之方法、及藉由該方法製造且耐熱性優異之波長變換構件。
本發明之波長變換構件之製造方法之特徵在於具備如下步驟:準備元件配置基材,該元件配置基材具備基材及沿與上述基材之厚度方向正交之方向隔開間隔而配置於上述基材上之複數個螢光體陶瓷元件;使上述複數個螢光體陶瓷元件埋入於含有無機物之硬化性層;使上述硬化性層硬化而獲得被覆層;及以包含至少一個上述螢光體陶瓷元件之方式將上述被覆層及上述基材沿厚度方向切斷。
又,於本發明之波長變換構件之製造方法中,較佳為上述硬化性層由陶瓷印墨(ceramics ink)、或含有無機氧化物粒子及金屬粒子之至少一種無機粒子與硬化性樹脂之硬化性樹脂組合物而形成。
又,於本發明之波長變換構件之製造方法中,較佳為上述基材係易剝離性片材。
本發明之波長變換構件之特徵在於:其係藉由上述製造方法而獲得。
於本發明之波長變換構件之製造方法中,可簡易且工業性地製造具備螢光體陶瓷元件及被覆其表面之被覆層之波長變換構件。
藉由本發明之製造方法獲得之本發明之波長變換構件之耐熱性
優異。
1‧‧‧波長變換構件
2‧‧‧坯片
2a‧‧‧胚體
3‧‧‧螢光體陶瓷層
4‧‧‧基材
5‧‧‧螢光體陶瓷元件
6‧‧‧硬化性層
7‧‧‧被覆層
8‧‧‧脫模片材
8a‧‧‧脫模片材
9‧‧‧陶瓷積層體
10‧‧‧切割刀片
11‧‧‧元件配置基材
12‧‧‧硬化性層-元件積層體
13‧‧‧被覆層-元件積層體
14‧‧‧基材積層波長變換構件
15‧‧‧半導體發光裝置
16‧‧‧光源
17‧‧‧波長變換散熱構件
18‧‧‧散熱構件
19‧‧‧窄幅刀片
20‧‧‧硬化性層片材
21‧‧‧耐熱性基板
X‧‧‧切割刀片寬度
Y‧‧‧螢光體陶瓷元件之寬度
圖1A~圖1E係對製造本發明之波長變換構件之一實施形態之方法進行說明之剖視步驟圖,且圖1A表示準備坯片之步驟,圖1B表示煅燒坯片之步驟,圖1C表示將螢光體陶瓷層配置於基材之步驟,圖1D表示刮取螢光體陶瓷層之一部分之步驟,圖1E表示獲得元件配置基材之步驟。
圖2F~圖2J係繼圖1A~圖1E之後對製造本發明之波長變換構件之一實施形態之方法進行說明之剖視步驟圖,且圖2F表示將元件配置基材與硬化性層對向配置之步驟,圖2G表示使螢光體陶瓷元件埋入於硬化性層之步驟,圖2H表示使硬化性層硬化之步驟,圖2I表示切斷被覆層及基材之步驟,圖2J表示獲得波長變換構件之步驟。
圖3表示圖1E之步驟中之俯視圖。
圖4表示具備本發明之波長變換構件之一實施形態之波長變換散熱構件之剖視圖。
圖5A~圖5D係對製造本發明之波長變換構件之另一實施形態(螢光體陶瓷元件為俯視圓形狀之形態)之方法進行說明之剖視步驟圖,且圖5A表示準備耐熱性基板之步驟,圖5B表示形成胚體之步驟,圖5C表示煅燒胚體之步驟,圖5D表示重新配置螢光體陶瓷元件之步驟。
圖6表示圖5D之步驟中之俯視圖。
參照圖1A~圖2J,對波長變換構件1之製造方法進行說明。
再者,將圖1A~圖1E之紙面上下方向設為「上下方向」(第1方向、厚度方向),紙面上側為上側,紙面下側為下側。又,將圖1A~圖1E之紙面左右方向設為「寬度方向」(第2方向、左右方向、與第1方向正交之方向),紙面右方向為右側,圖1A~圖1E之紙面左方向為左側。又,將圖1A~圖1E之紙厚方向設為「前後方向」(第3方向、與第1方向及第2方向正交之方向),圖1A~圖1E之紙厚近前為前側,圖1A~圖1E之紙厚裏側為後側。關於除圖1A~圖1E以外之圖式,亦以圖1A~圖1E之方向為基準。
波長變換構件1之製造方法具備如下步驟:準備坯片2;煅燒坯片2;將螢光體陶瓷層3配置於基材4;刮取螢光體陶瓷層3之一部分;獲得配置有螢光體陶瓷元件5之元件配置基材11;將元件配置基材11與硬化性層6對向配置;使螢光體陶瓷元件5埋入於硬化性層6;使硬化性層6硬化;將被覆層7及基材4切斷;及獲得波長變換構件1。
首先,如圖1A所示,準備坯片2(準備步驟)。坯片2係藉由將包含例如螢光體材料、黏合劑樹脂及溶劑之漿料塗佈於脫模片材8之上表面並加以乾燥而形成。
作為螢光體材料,其係構成下述螢光體之原材料,例如自氧化鋁、氧化釔、氧化鈰、氧化鋯、氧化鈦、進而於該等中賦活有其他元素者等中適當選擇而進行製備。
黏合劑樹脂只要使用用於製作坯片2之公知之黏合劑樹脂即可,例如可列舉丙烯酸系聚合物、丁醛系聚合物、乙烯系聚合物、胺基甲酸酯系聚合物等。較佳可列舉丙烯酸系聚合物。
黏合劑樹脂之含有比率相對於螢光體材料與黏合劑樹脂之合計體積量,例如為5體積%以上,較佳為20體積%以上,且為80體積%以
下,較佳為60體積%以下。
作為溶劑,可列舉:例如水,例如丙酮、甲基乙基酮、甲醇、乙醇、甲苯、丙酸甲酯、甲基賽路蘇等有機溶劑。
溶劑之含有比率於漿料中例如為1~30質量%。
於漿料中,可視需要含有分散劑、塑化劑、燒結助劑等公知之添加劑。
繼而,藉由以上述比率調配上述成分並利用球磨機等進行濕式混合,而製備漿料。
其次,藉由刮刀、凹版塗佈機、噴注式塗佈機(fountain coater)、塗鑄機、旋轉塗佈機、輥式塗佈機等公知之塗佈方法將漿料塗佈於脫模片材8之上表面並加以乾燥,藉此形成坯片2。
作為脫模片材8,可列舉:例如聚對苯二甲酸乙二酯(PET)膜等聚酯膜,例如聚碳酸酯膜,例如聚乙烯膜、聚丙烯膜等聚烯烴膜,例如聚苯乙烯膜,例如丙烯酸系膜,例如聚矽氧樹脂膜、氟樹脂膜等樹脂膜等。進而,亦可列舉例如銅箔、不鏽鋼箔等金屬箔。較佳可列舉樹脂膜,進而較佳可列舉聚酯膜。
於脫模片材8之表面,為了提高脫模性而視需要實施脫模處理。
關於脫模片材8之厚度,例如就操作性、成本之觀點而言,例如為10~200μm。
以此方式獲得之坯片2係螢光體陶瓷層3(螢光體陶瓷板)之燒結前陶瓷,且形成為俯視大致矩形狀之平板形狀。
再者,為了獲得所期望之厚度,坯片2亦可藉由利用熱層壓積層複數個(複層)坯片2而形成。
坯片2之厚度例如為10μm以上,較佳為30μm以上,又,例如為500μm以下,較佳為200μm以下。
其次,如圖1B所示,煅燒坯片2(煅燒步驟)。
煅燒溫度例如為1300℃以上,較佳為1500℃以上,又,例如為2000℃以下,較佳為1800℃以下。
煅燒時間例如為1小時以上,較佳為2小時以上,又,例如為24小時以下,較佳為5小時以下。
煅燒可於常壓下實施,又,亦可於減壓下或真空下實施。較佳為於減壓下或真空下實施。
於上述煅燒(正式煅燒)之前,為了將黏合劑樹脂或分散劑等有機成分熱分解及去除,亦可使用電爐,於空氣中、例如於600~1300℃下進行預加熱,實施脫黏合劑處理。
又,煅燒時之升溫速度例如為0.5~20℃/分鐘。
藉此,獲得螢光體陶瓷層3。
以此方式獲得之螢光體陶瓷層3形成為俯視大致矩形狀之平板形狀。
螢光體陶瓷層3之厚度例如為10μm以上,較佳為50μm以上,又,例如為500μm以下,較佳為200μm以下。
其次,如圖1C所示,將螢光體陶瓷層3配置於基材4(基材配置步驟)。具體而言,將螢光體陶瓷層3配置於基材4之上表面之大致中央部。
作為基材4,就刀片(下述)之刮取性、及基材4相對於波長變換構件1之剝離性之觀點而言,較佳可列舉易剝離性片材。易剝離性片材例如由可藉由加熱等而容易地剝離之熱剝離片材形成。
熱剝離片材具備支持層及積層於支持層之上表面之黏著層。
支持層例如由聚酯等耐熱性樹脂形成。
黏著層例如由常溫(25℃)下具有黏著性、於加熱時黏著性降低之(或失去黏著性之)熱膨脹性黏著劑等形成。
熱剝離片材可使用市售品,具體而言,可使用REVALPHA系列
(註冊商標,日東電工公司製造)等。
熱剝離片材係藉由支持層且隔著黏著層而確實地支持螢光體陶瓷層3(進而波長變換構件1),並且基於因加熱引起之黏著層之黏著性之降低而自波長變換構件1剝離。
又,基材4亦可由例如聚烯烴(具體而言,聚乙烯、聚丙烯)、乙烯-乙酸乙烯酯共聚物(EVA)等乙烯聚合物、例如聚對苯二甲酸乙二酯、聚碳酸酯等聚酯、例如聚四氟乙烯等氟樹脂等樹脂材料等形成。又,基材亦可由例如鐵、鋁、不鏽鋼等金屬材料等形成。
基材4之厚度例如為10~1000μm。
藉此,獲得具備基材4及設置於基材4之上表面之螢光體陶瓷層3的陶瓷積層體9。
其次,如圖1D所示,將螢光體陶瓷層3之一部分去除(去除步驟)。具體而言,使用作為刀片之切割刀片10刮取螢光體陶瓷層3之一部分。
切割刀片10係用於公知或市售之切割裝置之圓盤狀旋轉刀。切割刀片10之前端(下端)於投影於沿著切斷方向之方向(圖1D中為紙厚方向即前後方向)時形成為沿上下方向延伸之大致矩形狀(板狀)。即,以切斷面成為大致矩形狀之方式形成。
切割刀片10之前端之寬度方向長度X例如為0.05mm以上,較佳為0.1mm以上,且例如為2.0mm以下,較佳為1.0mm以下。
該步驟中,首先,如圖1D所示,將螢光體陶瓷層3之一部分沿前後方向進行刮取。
具體而言,將陶瓷積層體9以切斷方向成為前後方向之方式配置於切割裝置內。繼而,以當切割刀片10移動時,切割刀片10之前端(下端)與螢光體陶瓷層3接觸且未貫通基材4之方式,調整切割刀片10或陶瓷積層體9之配置。即,以切割刀片10之前端到達基材4之上表面
且未到達基材4之下表面之方式,調整切割刀片10或陶瓷積層體9之上下方向位置。繼而,使切割刀片10一面高速旋轉一面於沿著切斷方向之前後方向移動。
藉此,將與切割刀片10(前端周邊)接觸之部分之螢光體陶瓷層3沿著前後方向自基材4進行刮取。即,螢光體陶瓷層3被刮取為大致矩形狀。於被刮取後之部分,基材4之上表面露出。
如圖1D之假想線所示般隔開所期望之間隔(即,所期望之螢光體陶瓷元件5之寬度方向長度),反覆實施該前後方向之刮取。
其次,以與上述同樣之方式,使切割刀片10一面高速旋轉一面以切斷方向沿著寬度方向之方式進行移動,藉此沿著寬度方向刮取螢光體陶瓷層3之一部分。隔開所期望之間隔,反覆實施該寬度方向之刮取。
即,如圖3所示,呈格子狀地刮取螢光體陶瓷層3。
如此,如圖1E及圖3所示,獲得具備基材4及呈格子狀整列配置於基材4之上表面之複數個螢光體陶瓷元件5的元件配置基材11。
再者,於上述步驟中,藉由固定螢光體陶瓷層3且移動切割刀片10,而刮取螢光體陶瓷層3之一部分,亦可例如藉由固定所要高速旋轉之切割刀片10之位置,且利用X-Y載台等使陶瓷積層體9相對於切割刀片10於前後方向或寬度方向進行移動,而刮取螢光體陶瓷層3之一部分。
螢光體陶瓷元件5之各者形成為剖視大致矩形狀及俯視大致矩形狀。
螢光體陶瓷元件5之寬度方向長度Y例如為0.2mm以上,較佳為1mm以上,又,例如為10mm以下,較佳為5mm以下。螢光體陶瓷元件5之前後方向長度例如為0.05mm以上,較佳為0.1mm以上,又,例如為5mm以下,較佳為3mm以下。
複數個螢光體陶瓷元件5之寬度方向間隔及前後方向間隔與切割刀片10之前端之寬度方向長度X相同。
其次,如圖2F所示,將元件配置基材11與硬化性層6對向配置(對向配置步驟)。具體而言,首先,準備硬化性層6設置於脫模片材8a上之硬化性層片材20。硬化性層片材20係藉由於脫模片材8a上利用公知方法將含有無機物之硬化性組合物塗佈於脫模片材8a之上表面而製造。
作為硬化性組合物,只要為含有無機物且具備硬化性者,則無限定,例如可列舉陶瓷印墨、含有硬化性樹脂及無機粒子之硬化性樹脂組合物、及含有鹼金屬矽酸鹽及無機粒子之矽酸鹽水溶液。
陶瓷印墨例如含有無機物之陶瓷、有機聚矽氧烷等黏合劑及溶劑,且於低溫(例如120~180℃)下硬化(固化)。作為陶瓷印墨中之無機物,例如可列舉二氧化矽、二氧化鈦、鈦酸鉀等白色顏料等。作為溶劑,可列舉丁基二醇醚、二乙二醇二丁醚等醚。再者,就分散性之觀點而言,較佳為對白色顏料實施表面處理。
作為陶瓷印墨,可使用市售品,具體而言,可列舉AIN股份有限公司製造之陶瓷印墨(RG型、AN型、UV型、SD型)等。
作為硬化性樹脂組合物中所含之硬化性樹脂,例如可列舉硬化性聚矽氧樹脂、環氧樹脂、丙烯酸系樹脂等。較佳可列舉硬化性聚矽氧樹脂。
作為硬化性聚矽氧樹脂,例如可列舉縮合反應硬化型聚矽氧樹脂、加成反應硬化型聚矽氧樹脂等。較佳可列舉加成反應硬化型聚矽氧樹脂。
加成反應硬化型聚矽氧樹脂例如包含含有成為主劑之含有乙烯系不飽和烴基之聚矽氧烷及成為交聯劑之有機氫矽氧烷之聚矽氧樹脂組合物。加成反應硬化型聚矽氧樹脂通常作為含有主劑(含有乙烯系
不飽和烴基之聚矽氧烷)之A液及含有交聯劑(有機氫矽氧烷)之B液之兩種液體被提供。而且,於混合主劑(A液)與交聯劑(B液)而製備混合液,由混合液形成被覆層7之步驟中,含有乙烯系不飽和烴基之聚矽氧烷與有機氫矽氧烷藉由加熱等而進行加成反應,藉此加成反應硬化型聚矽氧樹脂硬化,形成聚矽氧彈性體(硬化體)。
作為加成反應硬化型聚矽氧樹脂,可使用市售品(商品名:KER-2500,信越化學工業公司製造,商品名:LR-7665,Wacker Asahikasei公司製造等)。
作為構成無機粒子之無機物,可列舉:例如二氧化矽、二氧化鈦、氧化鋁、氧化鋯、鈦酸複合氧化物(例如鈦酸鋇、鈦酸鉀)等無機氧化物,例如銀、鋁等金屬等。就光反射性、散熱性之觀點而言,較佳可列舉二氧化鈦、氧化鋁、氧化鋯、鈦酸鋇、銀,就長期耐熱性之觀點而言,更佳可列舉二氧化鈦、氧化鋁、氧化鋯、鈦酸鋇,進而較佳可列舉二氧化鈦、氧化鋁。
無機粒子之平均粒徑(平均最大長度)例如為0.1~50μm。
作為硬化性樹脂組合物,較佳可列舉含有包含選自由二氧化鈦、氧化鋁、氧化鋯、鈦酸鋇及銀所組成之群中之至少一種之無機粒子與硬化性聚矽氧樹脂之硬化性樹脂組合物,更佳可列舉含有包含選自由氧化鈦、氧化鋁、氧化鋯及鈦酸鋇所組成之群中之至少一種之無機粒子與硬化性聚矽氧樹脂之硬化性樹脂組合物,進而較佳可列舉含有包含氧化鈦及氧化鋁中之至少一種之無機粒子與硬化性聚矽氧樹脂之硬化性樹脂組合物。
作為矽酸鹽水溶液中所含之鹼金屬矽酸鹽,例如可列舉矽酸鈉(水玻璃)等。
硬化性組合物中之無機物之含有比率(固形物成分量)例如為30質量%以上,較佳為40質量%以上,進而較佳為60質量%以上,且例如
為90質量%以下,較佳為80質量%以下。硬化性組合物中之黏合劑或硬化性樹脂之含有比率(固形物成分量)例如為10質量%以上,較佳為20質量%以上,且例如為70質量%以下,較佳為60質量%以下,進而較佳為40質量%以下。
作為硬化性組合物,較佳可列舉陶瓷印墨、含有無機氧化物粒子及金屬粒子之至少一種無機粒子與硬化性樹脂之硬化性樹脂組合物,更佳可列舉陶瓷印墨、含有無機氧化物粒子及硬化性樹脂之硬化性樹脂組合物,進而較佳可列舉陶瓷印墨。藉此,可使被覆層7之散熱性、反射性提高。
脫模片材8a與脫模片材8相同。
作為硬化性組合物之塗佈方法,可列舉印刷、分注器等公知之塗佈方法。
硬化性層6之厚度例如為80μm以上,較佳為90μm以上,又,例如為1000μm以下,較佳為500μm以下。
其次,以螢光體陶瓷元件5與硬化性層6相向之方式,將元件配置基材11與硬化性層片材20隔開間隔而於厚度方向對向配置。
其次,如圖2G所示,使螢光體陶瓷元件5埋入於硬化性層6(埋入步驟)。具體而言,使元件配置基材11向下側移動,對硬化性層片材20進行按壓。
藉此,螢光體陶瓷元件5之表面(下表面及側面)由硬化性層6被覆。與此同時,自螢光體陶瓷元件5露出之基材4之表面(下表面)由硬化性層6被覆。
壓力例如為0.03MPa以上,較佳為0.1MPa以上,又,例如為2MPa以下,較佳為0.5MPa以下。
藉此,獲得硬化性層-元件積層體12,該硬化性層-元件積層體12具備:基材4;複數個螢光體陶瓷元件5,其等整列配置於基材4下;
硬化性層6,其以被覆複數個螢光體陶瓷元件5之下表面及側面之方式形成於基材4下;及脫模片材8a,其配置於硬化性層6下。
再者,將元件配置基材11與硬化性層片材20對向配置之步驟與將螢光體陶瓷元件5埋入於硬化性層6之步驟可作為連續之一個步驟而實施。
其次,如圖2H所示,使硬化性層6硬化(硬化步驟)。具體而言,對硬化性層-元件積層體12進行加熱而使硬化性層6硬化(固化)。
加熱溫度例如為100℃以上,較佳為120℃以上,又,例如為200℃以下,較佳為180℃以下。
加熱時間例如為0.5小時以上,較佳為1小時以上,又,例如為12小時以下,較佳為6小時以下。
又,亦可視需要於加熱硬化之前,例如於50~100℃、1~10小時之條件下實施乾燥步驟。
藉此,硬化性層6經加熱硬化,形成被覆層7。
即,獲得被覆層-元件積層體13,該被覆層-元件積層體13具備:基材4;複數個螢光體陶瓷元件5,其等整列配置於基材4下;被覆層7,其以被覆複數個螢光體陶瓷元件5之下表面及側面之方式形成於基材4下;及脫模片材8a,其配置於被覆層7下。
其次,如圖2I所示,以包含1個螢光體陶瓷元件5之方式將被覆層7及基材4沿厚度方向切斷(切斷步驟)。即,分割成複數個螢光體陶瓷元件5,使螢光體陶瓷元件5單片化(個別化)。
具體而言,於相互鄰接之螢光體陶瓷元件5之間,使用窄幅刀片19藉由切割對基材4、被覆層7及脫模片材8a沿厚度方向進行切斷加工。
窄幅刀片19係寬度窄於切割刀片10之刀片,且係用於公知或市售之切割裝置之圓盤狀旋轉刀。窄幅刀片19於投影於沿著切斷方向之
方向(圖2I中為紙厚方向即前後方向)時形成為沿上下方向延伸之大致矩形狀(板狀)。
窄幅刀片19之寬度方向長度Z窄於切割刀片10之寬度方向長度X,例如為X之80%以下,較佳為60%以下,又,例如為10%以上,較佳為30%以上。具體而言,例如為0.01mm以上,較佳為0.05mm以上,又,例如為1.5mm以下,較佳為0.8mm以下。
該切斷步驟中,將被覆層-元件積層體13配置於切割裝置內。繼而,以將基材4、被覆層7及脫模片材8a沿厚度方向切斷之方式,調整窄幅刀片19或被覆層-元件積層體13之配置。即,以窄幅刀片19之前端貫通基材4及被覆層7且到達脫模片材8a之下表面之方式,調整窄幅刀片19或被覆層-元件積層體13之上下方向位置。繼而,以與上述去除步驟同樣之方式,使窄幅刀片19一面高速旋轉一面於相互鄰接之螢光體陶瓷元件5之間沿前後方向及寬度方向(即呈格子狀)進行移動,而對基材4、被覆層7及脫模片材8a進行切斷加工。
藉此,如圖2J所示,獲得具備基材4、經個別化之螢光體陶瓷元件5、被覆層7、及脫模片材8a之基材積層波長變換構件14。
其次,如圖2J之假想線所示般剝離基材4及脫模片材8a,藉此獲得具備經個別化之螢光體陶瓷元件5及被覆層7之波長變換構件1。
螢光體陶瓷元件5設置於基材4之下表面之俯視大致中央,且由螢光體陶瓷(煅燒體)形成。
螢光體陶瓷中所含有之螢光體具有波長變換功能,例如可列舉能夠將藍色光變換為黃色光之黃色螢光體、能夠將藍色光變換為紅色光之紅色螢光體等。
作為黃色螢光體,可列舉:例如(Ba,Sr,Ca)2SiO4:Eu、(Sr,Ba)2SiO4:Eu(正矽酸鋇(BOS))等矽酸鹽螢光體,例如Y3Al5O12:Ce(YAG(釔-鋁-石榴石):Ce)、Tb3Al3O12:Ce(TAG(鋱-鋁-石榴
石):Ce)等具有石榴石型結晶構造之石榴石型螢光體,例如Ca-α-SiAlON等氮氧化物螢光體等。作為紅色螢光體,例如可列舉CaAlSiN3:Eu、CaSiN2:Eu等氮化物螢光體等。
被覆層7以被覆螢光體陶瓷元件5之表面之方式設置於基材4之下表面。具體而言,以被覆螢光體陶瓷元件5之表面(下表面及側面)及基材4之下表面(除配置有螢光體陶瓷元件5之面以外)之方式設置於基材4之下表面。
被覆層7之厚度(圖2J中之自螢光體陶瓷元件5之下表面至脫模片材8a之上表面之距離T)例如為10μm以上,較佳為50μm以上,又,例如為500μm以下,較佳為200μm以下。
被覆層7之側面之寬度(圖2J中之自螢光體陶瓷元件5之側面至被覆層7之外側表面之距離W)例如為10μm以上,較佳為50μm以上,又,例如為500μm以下,較佳為200μm以下。
如上所述,被覆層7係由含有無機物之組合物形成。
被覆層7較佳為具有作為散熱層及反射層之作用。
被覆層7之導熱率超過0.20W/m.K,較佳為1.0W/m.K以上,進而較佳為3.0W/m.K以上,又,例如亦為30.0W/m.K以下。導熱率係藉由氙燈閃光法導熱分析儀(NETZSCH公司製造之LFA447)而求出。
被覆層7之反射率例如為80%以上,較佳為90%以上,又,例如為100%以下。反射率係藉由使用紫外可見分光光度計(「V670」,日本分光公司製造)測定波長450nm之光之反射而求出。
該波長變換構件1例如用於車載燈具、高天花板懸掛燈具、道路燈具、表演燈具等具備高輸出光源之適於遠方照射之半導體發光裝置(例如發光二極體裝置、半導體雷射裝置)等。
具體而言,如圖4所示,半導體發光裝置15具備光源16及波長變
換散熱構件17。
光源16可列舉發光二極體(LED)、半導體雷射(LD)等。
波長變換散熱構件17與光源16隔開間隔而對向配置,且具備波長變換構件1及散熱構件18。
散熱構件18設置於波長變換構件1之被覆層7之表面(下表面)。散熱構件18形成為俯視大致矩形狀之平板狀,且於下表面,用以提高散熱性之複數個凸部朝向下側設置。散熱構件18例如為散熱片(heat sink),例如由鋁、銅等導熱性金屬或AlN等陶瓷材料形成。藉由散熱構件18,可將波長變換構件1中產生之熱釋放至外部。
波長變換散熱構件17係藉由如下方式獲得,即,首先,將基材積層波長變換構件14之脫模片材8a剝離,於露出之被覆層7之表面經由公知之導熱性接著劑層(未圖示)而接著散熱構件18,其次,藉由加熱等將基材4自被覆層7及螢光體陶瓷元件5剝離。
而且,此種波長變換構件1由於螢光體層由螢光體陶瓷元件5形成,故而耐熱性及散熱性優異。
又,由於被覆螢光體陶瓷元件5之被覆層7含有無機物,故而可經由被覆層7將螢光體陶瓷元件5中產生之熱高效率地傳導至外部,散熱性優異。又,亦可高效率地反射由螢光體陶瓷元件5擴散、放射之光。
又,此種波長變換構件1之製造方法可簡易且工業性地製造具備經單片化之螢光體陶瓷元件5且耐熱性、散熱性及反射性優異之波長變換構件1。
於以下之各圖中,對與上述各部分對應之構件標註相同之參照符號,並省略其詳細之說明。
於圖1A~圖1E及圖3之實施態樣中,藉由使用切割刀片10刮取螢
光體陶瓷層3之一部分,而製作俯視大致矩形狀之元件配置基材11,亦可例如如圖5A~圖5D及圖6所示,藉由印刷方法製作俯視大致圓形狀之元件配置基材11。
具體而言,首先,如圖5A所示,準備耐熱性基板21。
耐熱性基板21係不會因煅燒時之高溫而發生變形之基板,可使用公知或市售者。
其次,如圖5B所示,藉由網版印刷等印刷方法將俯視大致圓形狀及剖視大致矩形狀之胚體2a形成於耐熱性基板21上。
構成胚體2a之組合物係上述含有無機物之硬化性組合物。
其次,如圖5C所示,煅燒胚體2a。藉此,獲得設置於耐熱性基板21上之複數個螢光體陶瓷元件5。
其次,如圖5D及圖6所示,將螢光體陶瓷元件5重新配置於基材4上。具體而言,將複數個螢光體陶瓷元件5自耐熱性基板21剝離,於基材4上沿寬度方向及前後方向隔開間隔而配置。藉此,獲得元件配置基材11。
於圖5A~圖5D之實施形態中,由於藉由印刷方法製作胚體2a,故而可形成俯視大致圓形狀、俯視大致矩形狀等所期望之圖案之螢光體陶瓷元件5。又,由於無需刮取螢光體陶瓷層3,故而可提高螢光體材料之良率。
另一方面,於圖1A~圖1E之實施形態中,由於在基材4上形成複數個螢光體陶瓷元件5,故而無需重新配置複數個螢光體陶瓷元件5。
因此,可高效率且順利地製造波長變換構件1。
再者,於圖2I中以包含1個螢光體陶瓷元件5之方式將基材4、被覆層7及脫模片材8a切斷,亦可例如以包含2個以上之螢光體陶瓷元件5之方式將基材4、被覆層7及脫模片材8a切斷。
以下,列舉實施例進而詳細地說明本發明,但本發明並不限定於該等。又,以下之記載中使用之調配比率(含有比率)、物性值、參數等具體數值可以上述「實施方式」中記載之與該等對應之調配比率(含有比率)、物性值、參數等相應記載之上限值(作為「以下」、「未達」定義之數值)或下限值(作為「以上」、「超過」定義之數值)代替。
製備包含氧化釔粒子(純度99.9%,JAPAN YTTRIUM公司製造)11.34g、氧化鋁粒子(純度99.9%,住友化學公司製造)8.577g、及氧化鈰粒子0.087g之螢光體材料之粉末。
將所製備之螢光體材料之粉末20g及水溶性黏合劑樹脂(「WB4101」,Polymer Inovations,Inc公司製造)以固形物成分之體積比率成為60:40之方式進行混合,進而添加蒸餾水並放入氧化鋁製容器中,添加直徑3mm之氧化鋯球,利用球磨機進行24小時之濕式混合,藉此製備螢光體之原料粒子之漿料。
其次,藉由刮刀法於作為脫模片材之PET膜8上將所製備之漿料進行薄帶成形(tape casting)並加以乾燥,藉此形成厚度75μm之坯片2(參照圖1A)。其後,將坯片2自PET膜8剝離,並將坯片2切成20mm×20mm之尺寸。製作2片切出之坯片2,使用熱壓機將該2片坯片2進行熱層壓,藉此製作坯片積層體2。
其次,實施如下脫黏合劑處理:利用電灼爐將所製作之坯片積層體2於大氣中以1℃/分鐘之升溫速度加熱至1200℃,而將黏合劑樹脂等有機成分分解去除。其後,將坯片積層體2轉移至高溫真空爐,於約10-3Torr(約0.13Pa)之減壓下以5℃/分鐘之升溫速度加熱至1750℃,以該溫度進行3小時煅燒,藉此製作厚度120μm之包含Y3Al5O12:Ce之螢光體陶瓷層3(螢光體陶瓷板)(參照圖1B)。
其次,將螢光體陶瓷層3貼合於設置在切割裝置(商品名「DICING SAW」,DISCO公司製造)之切割框之熱剝離片材4(基材,
商品名「REVALPHA 31950」,日東電工公司製造)之黏著層面(上表面),而獲得陶瓷積層體9(參照圖1C)。
其次,將前端為剖視大致矩形狀之切割刀片10(前端之寬度X:0.4mm)之上下方向位置以切割刀片10之前端與熱剝離片材4之上表面一致之方式進行調整。
其次,一面使切割刀片10進行高速旋轉,一面以寬度方向之間隔(Y)及前後方向之間隔分別成為3.0mm之方式使切割刀片10相對於陶瓷積層體9進行相對移動,藉此呈格子狀地刮取螢光體陶瓷層3之一部分(參照圖1D)。
藉此,獲得複數個螢光體陶瓷元件5(3.0mm×3.0mm)於前後方向及寬度方向隔開0.4mm之間隔呈格子狀整列配置於熱剝離片材4上而成的元件配置基材11(參照圖1E及圖3)。
其次,準備陶瓷印墨(商品名「RG12-22」,白色,AIN股份有限公司製造)作為硬化性層6之材料,並利用刮刀塗佈於作為脫模片材之PET膜8a上,形成厚度220μm之硬化性層6。
繼而,以螢光體陶瓷元件5與硬化性層6相向之方式,將元件配置基材11與硬化性層片材20隔開間隔而於厚度方向對向配置(參照圖2F)。
其次,藉由使元件配置基材11向下側移動,且以0.3MPa之壓力對硬化性層6進行按壓,而使螢光體陶瓷元件5埋入於硬化性層6(參照圖2G)。
其次,藉由於90℃下乾燥5小時後,於150℃下加熱硬化2小時,而形成被覆層7。藉此,獲得被覆層-元件積層體13(參照圖2H)。
其次,於切割裝置內配置被覆層-元件積層體13。其後,使用前端為剖視大致矩形狀之窄幅刀片19(前端之寬度Z:0.2mm),以於熱剝離片材4、被覆層7及脫模片材8a之厚度方向上貫通之方式將螢光體
陶瓷元件5間之寬度方向中央及前後方向中央進行切斷(參照圖2I)。即,以成為3.2mm×3.2mm之尺寸之方式將被覆層-元件積層體13切斷。藉此,使螢光體陶瓷元件5單片化,獲得基材積層波長變換構件14。
其次,自所獲得之基材積層波長變換構件14剝離PET膜8a,其次,於200℃下剝離熱剝離片材4。藉此,製作具備1個螢光體陶瓷元件5(3.0mm×3.0mm,厚度120μm)及被覆層7(3.2mm×3.2mm,側面寬度W:0.1mm,厚度T:100μm)之波長變換構件1(參照圖2J)。
再者,上述發明係作為本發明所例示之實施形態提供,但其僅為例示,並非限定性地解釋。由該技術領域之業者明確之本發明之變化例包含於後述申請專利範圍內。
本發明之波長變換構件及其製造方法可應用於各種工業製品,例如可用於白色發光二極體裝置等半導體發光裝置等。
2‧‧‧坯片
3‧‧‧螢光體陶瓷層
4‧‧‧基材
5‧‧‧螢光體陶瓷元件
8‧‧‧脫模片材
9‧‧‧陶瓷積層體
10‧‧‧切割刀片
11‧‧‧元件配置基材
X‧‧‧切割刀片寬度
Y‧‧‧螢光體陶瓷元件之寬度
Claims (4)
- 一種波長變換構件之製造方法,其特徵在於具備如下步驟:準備元件配置基材,該元件配置基材具備基材及沿與上述基材之厚度方向正交之方向隔開間隔而配置於上述基材上之複數個螢光體陶瓷元件;使上述複數個螢光體陶瓷元件埋入於含有無機物之硬化性層;使上述硬化性層硬化而獲得被覆層;及以包含至少一個上述螢光體陶瓷元件之方式將上述被覆層及上述基材沿厚度方向切斷。
- 如請求項1之波長變換構件之製造方法,其中上述硬化性層係由陶瓷印墨、或含有無機氧化物粒子及金屬粒子之至少一種無機粒子與硬化性樹脂之硬化性樹脂組合物形成。
- 如請求項1之波長變換構件之製造方法,其中上述基材係易剝離性片材。
- 一種波長變換構件,其特徵在於:其係藉由如請求項1之製造方法而獲得。
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