TW201535800A - Light-emitting element, light-emitting device, and manufacturing method thereof - Google Patents
Light-emitting element, light-emitting device, and manufacturing method thereof Download PDFInfo
- Publication number
- TW201535800A TW201535800A TW103139149A TW103139149A TW201535800A TW 201535800 A TW201535800 A TW 201535800A TW 103139149 A TW103139149 A TW 103139149A TW 103139149 A TW103139149 A TW 103139149A TW 201535800 A TW201535800 A TW 201535800A
- Authority
- TW
- Taiwan
- Prior art keywords
- phosphor
- light
- phosphor film
- substrate
- film
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000011230 binding agent Substances 0.000 claims abstract description 42
- 239000002994 raw material Substances 0.000 claims abstract description 24
- 239000002243 precursor Substances 0.000 claims abstract description 15
- 238000000576 coating method Methods 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 207
- 239000002245 particle Substances 0.000 claims description 43
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 30
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 19
- 238000009826 distribution Methods 0.000 claims description 16
- 229910052902 vermiculite Inorganic materials 0.000 claims description 14
- 235000019354 vermiculite Nutrition 0.000 claims description 14
- 239000010455 vermiculite Substances 0.000 claims description 14
- 229910052684 Cerium Inorganic materials 0.000 claims description 12
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims description 12
- 150000001785 cerium compounds Chemical class 0.000 claims description 11
- 238000007639 printing Methods 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 claims description 8
- 239000011164 primary particle Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 7
- 238000007254 oxidation reaction Methods 0.000 abstract description 7
- 230000007062 hydrolysis Effects 0.000 abstract description 6
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 description 17
- 239000000945 filler Substances 0.000 description 13
- 239000002904 solvent Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 239000007921 spray Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- 239000011882 ultra-fine particle Substances 0.000 description 4
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 229910004283 SiO 4 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 3
- -1 rare earth oxide Chemical compound 0.000 description 3
- 230000002123 temporal effect Effects 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 2
- 102100032047 Alsin Human genes 0.000 description 2
- 101710187109 Alsin Proteins 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910003564 SiAlON Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 2
- 229940088601 alpha-terpineol Drugs 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- YRHYCMZPEVDGFQ-UHFFFAOYSA-N methyl decanoate Chemical compound CCCCCCCCCC(=O)OC YRHYCMZPEVDGFQ-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- 229910015999 BaAl Inorganic materials 0.000 description 1
- OMPIYDSYGYKWSG-UHFFFAOYSA-N Citronensaeure-alpha-aethylester Natural products CCOC(=O)CC(O)(C(O)=O)CC(O)=O OMPIYDSYGYKWSG-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000005640 Methyl decanoate Substances 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- DOOTYTYQINUNNV-UHFFFAOYSA-N Triethyl citrate Chemical compound CCOC(=O)CC(O)(C(=O)OCC)CC(=O)OCC DOOTYTYQINUNNV-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 229940057975 ethyl citrate Drugs 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical class OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 235000013769 triethyl citrate Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
- Led Devices (AREA)
Abstract
Description
本發明係有關一種使用螢光體材料的發光元件、發光裝置及其製造方法。 The present invention relates to a light-emitting element using a phosphor material, a light-emitting device, and a method of manufacturing the same.
在使用螢光體的發光裝置方面，例如，可知悉一種使螢光體分散並配置於環氧樹脂或矽氧樹脂者(例如，參照專利文獻1或專利文獻2)。但是，就此發光裝置而言，具有所謂伴隨LED的高輸出化或LED之發熱使環氧樹脂或矽氧樹脂劣化、變形、剝離而難以謀求高輸出化之問題。關於其解決對策方面，例如開發一種取代環氧樹脂或矽氧樹脂而使螢光體分散於玻璃的發光裝置(例如，參照專利文獻3~專利文獻5)。依據此發光裝置，藉由於分散劑使用無機材料而能提升構造的耐熱性。 In the case of a light-emitting device using a phosphor, for example, one in which a phosphor is dispersed and disposed in an epoxy resin or a silicone resin can be known (for example, refer to Patent Document 1 or Patent Document 2). However, in the light-emitting device, there is a problem that the high-output of the LED or the heat generation of the LED deteriorates, deforms, and peels off the epoxy resin or the epoxy resin, and it is difficult to increase the output. In order to solve the problem, for example, a light-emitting device in which a phosphor is dispersed in glass instead of an epoxy resin or a silicone resin has been developed (for example, refer to Patent Document 3 to Patent Document 5). According to this light-emitting device, the heat resistance of the structure can be improved by using an inorganic material as a dispersant.
專利文獻1 日本特許第3364229號公報 Patent Document 1 Japanese Patent No. 3364229
專利文獻2 日本特許第3824917號公報 Patent Document 2 Japanese Patent No. 3824917
專利文獻3 日本特開2009-91546號公報 Patent Document 3 Japanese Patent Laid-Open Publication No. 2009-91546
專利文獻4 日本特開2008-143978號公報 Patent Document 4 Japanese Patent Laid-Open Publication No. 2008-143978
專利文獻5 日本特開2008-115223號公報 Patent Document 5 Japanese Patent Laid-Open Publication No. 2008-115223
然而，一般的低熔點玻璃若沒有在實質500℃以上進行加熱則難軟化到能使螢光體分散的程度(參照引用文獻4實施例)。例如，透過添加鉛等之重金屬雖可達低熔點化，惟從環境或對人體影響的觀點考量，其等元素被許可之用途極少。因此，會有依螢光體的不同而性能因熱的影響而劣化的情況之問題。 However, if the general low-melting glass is not heated at substantially 500 ° C or higher, it is difficult to soften to such an extent that the phosphor can be dispersed (refer to the cited example 4). For example, heavy metals such as lead are added to a low melting point, but they are used for a limited range of applications depending on the environment or the influence on the human body. Therefore, there is a problem that the performance deteriorates due to the influence of heat depending on the phosphor.
又，在使螢光體分散於玻璃的情況，為維持作為母材的玻璃之強度而無法提高螢光體的填充率，伴隨LED的高亮度化，產生所謂超過所需的激發光透射之問題。要抑制此透射時，必須加厚供螢光體分散用的玻璃之厚度。其結果，無法謀求發光裝置的薄型化，又，因玻璃的厚度增加而光透射性降低，再者，亦有散熱受到阻礙等之問題。 In addition, in the case where the phosphor is dispersed in the glass, the filling rate of the phosphor cannot be increased in order to maintain the strength of the glass as the base material, and the problem of exceeding the required excitation light transmission occurs due to the increase in luminance of the LED. . To suppress this transmission, it is necessary to thicken the thickness of the glass for dispersing the phosphor. As a result, it is not possible to reduce the thickness of the light-emitting device, and the light transmittance is lowered due to an increase in the thickness of the glass, and there is also a problem that heat dissipation is hindered.
本發明係基於此種問題而完成者，目的在於提供一種可提升耐熱性且小型化之發光元件及發光裝置。 The present invention has been made in view of such a problem, and an object of the invention is to provide a light-emitting element and a light-emitting device which are capable of improving heat resistance and miniaturization.
本發明的發光元件為，具備配設於基板的一面上之半導體發光元件及配設於基板的另一面上且含有粒子狀的螢光體材料及黏合劑的螢光體膜，螢光體膜係於前述基板的另一面上塗布螢光體膜原料，在常溫使之反應或在500℃以下的溫度作熱處理而形成，該螢光體膜原料包含：前述螢光體材料；及含有由依水解或氧化 而成為氧化矽的氧化矽前驅物、矽酸鹽化合物、矽石及非結晶矽所構成的群當中至少1種之黏合劑原料。 The light-emitting device of the present invention includes a semiconductor light-emitting device disposed on one surface of the substrate, and a phosphor film including a particulate phosphor material and a binder disposed on the other surface of the substrate, and a phosphor film. Applying a phosphor film material to the other surface of the substrate, and reacting it at room temperature or heat-treating at a temperature of 500 ° C or lower, the phosphor film material comprising: the phosphor material; Oxidation Further, it is a binder raw material of at least one of a group consisting of a cerium oxide precursor of cerium oxide, a cerium compound, a vermiculite, and an amorphous cerium.
本發明的發光裝置係具備本發明的發光元件。 The light-emitting device of the present invention includes the light-emitting element of the present invention.
本發明的發光元件的製造方法及發光裝置的製造方法為，包含螢光體膜形成步驟，係在一面上形成有半導體發光元件之基板的另一面上，形成含有粒子狀的螢光體材料與黏合劑的螢光體膜，在螢光體膜形成步驟中，於基板的另一面上塗布螢光體膜原料，在常溫使之反應或在500℃以下的溫度作熱處理而形成螢光體膜，該螢光體膜原料包含：粒子狀的螢光體材料；及含有由依水解或氧化而成為氧化矽的氧化矽前驅物、矽酸鹽化合物、矽石及非結晶矽所構成的群當中至少1種之黏合劑原料。 A method for producing a light-emitting device and a method for producing a light-emitting device according to the present invention include a step of forming a phosphor film, and forming a phosphor-containing material containing particles in a surface of a substrate on which a semiconductor light-emitting device is formed on one surface In the phosphor film of the binder, in the phosphor film forming step, the phosphor film material is applied to the other surface of the substrate, and reacted at normal temperature or heat-treated at a temperature of 500 ° C or lower to form a phosphor film. The phosphor film material comprises: a particulate phosphor material; and at least one of a group consisting of a cerium oxide precursor, a cerium compound, a vermiculite, and an amorphous cerium which are hydrolyzed or oxidized to form cerium oxide. 1 kind of binder raw material.
本發明的其他發光元件的製造方法及發光裝置的製造方法為，包含：於基板的一面上形成半導體發光元件之半導體發光元件形成步驟；及於基板的另一面上形成含有粒子狀的螢光體材料與黏合劑的螢光體膜之螢光體膜形成步驟，在螢光體膜形成步驟中，於基板的另一面塗布螢光體膜原料，在常溫使之反應或在500℃以下的溫度作熱處理而形成螢光體膜，該螢光體膜原料包含：粒子狀的螢光體材料；及含有由依水解或氧化而成為氧化矽的氧化矽前驅物、矽酸鹽化合物、矽石及非結晶矽所構成的群當中至少1種之黏合劑原料。 A method for producing another light-emitting device of the present invention and a method for producing a light-emitting device include: a semiconductor light-emitting device forming step of forming a semiconductor light-emitting device on one surface of a substrate; and forming a particulate-containing phosphor on the other surface of the substrate a phosphor film forming step of a phosphor film of a material and a binder. In the phosphor film forming step, a phosphor film material is applied to the other surface of the substrate, and reacted at a normal temperature or at a temperature of 500 ° C or lower. Forming a phosphor film by heat treatment, the phosphor film material comprising: a particulate phosphor material; and a cerium oxide precursor, a cerium compound, a vermiculite, and a non-cerium, which are hydrolyzed or oxidized to form cerium oxide At least one binder material of the group consisting of crystallization enthalpy.
依據本發明，因為螢光體膜使用主要由無機材料構成的黏合劑，故能提升對從半導體發光元件產生的熱之耐熱性，可謀求高輸出化及高亮度化。又，因為螢光體膜係塗布包含螢光體材料及含有由依水解或氧化而成為氧化矽的氧化矽前驅物、矽酸鹽化合物、矽石及非結晶矽所構成的群當中至少1種之黏合劑原料之螢光體膜原料而形成，故可提高在螢光體膜中之螢光體材料的填充率，可減少螢光體膜的厚度。再者，因為於基板的一面上形成半導體發光元件，於基板的另一面上形成螢光體膜，故能使發光元件及發光裝置更小型化，並且使從螢光體材料產生的熱經由半導體發光元件擴散，能提升散熱性。再加上，由於螢光體膜係在常溫反應或在500℃以下的溫度作熱處理而獲得，故能在低溫下形成，可抑制螢光體材料之特性劣化。 According to the present invention, since the phosphor film is a binder mainly composed of an inorganic material, the heat resistance to heat generated from the semiconductor light-emitting device can be improved, and the output can be increased and the brightness can be increased. Further, the phosphor film is coated with at least one selected from the group consisting of a phosphor material and a group consisting of a cerium oxide precursor, a cerium compound, a vermiculite, and an amorphous cerium which become cerium oxide by hydrolysis or oxidation. Since the phosphor material of the binder raw material is formed, the filling rate of the phosphor material in the phosphor film can be increased, and the thickness of the phosphor film can be reduced. Further, since the semiconductor light-emitting element is formed on one surface of the substrate and the phosphor film is formed on the other surface of the substrate, the light-emitting element and the light-emitting device can be further miniaturized, and the heat generated from the phosphor material can be passed through the semiconductor. The light-emitting elements are diffused to improve heat dissipation. Further, since the phosphor film is obtained by heat treatment at room temperature or at a temperature of 500 ° C or lower, it can be formed at a low temperature, and deterioration of characteristics of the phosphor material can be suppressed.
再者，若螢光體材料之一次粒子的平均粒徑設為1μm以上20μm以下，或螢光體膜的表面粗糙度依算術平均粗糙度Ra計而設為10μm以下，或螢光體膜的膜厚分布設為±10%以內，則可抑制色斑、可均一化並使性能穩定化。 In addition, when the average particle diameter of the primary particles of the phosphor material is 1 μm or more and 20 μm or less, or the surface roughness of the phosphor film is 10 μm or less in terms of arithmetic mean roughness Ra, or a phosphor film When the film thickness distribution is within ±10%, the color unevenness can be suppressed, the uniformity can be achieved, and the performance can be stabilized.
再者，若於基板的另一面上形成螢光體膜後，切斷基板而晶片化，則可容易地製造本發明的發光元件及發光裝置，同時能提升製造效率。 Further, when a phosphor film is formed on the other surface of the substrate, and the substrate is cut and wafer-formed, the light-emitting element and the light-emitting device of the present invention can be easily produced, and the manufacturing efficiency can be improved.
10‧‧‧發光元件 10‧‧‧Lighting elements
11‧‧‧基板 11‧‧‧Substrate
12‧‧‧半導體發光元件 12‧‧‧Semiconductor light-emitting components
12A、12B‧‧‧電極 12A, 12B‧‧‧ electrodes
13‧‧‧螢光體膜 13‧‧‧Fluorescent film
20‧‧‧發光裝置 20‧‧‧Lighting device
21‧‧‧配線基板 21‧‧‧Wiring substrate
21A、21B‧‧‧配線 21A, 21B‧‧‧ wiring
22A、22B‧‧‧突塊 22A, 22B‧‧‧Bumps
23‧‧‧反射器框 23‧‧‧ reflector frame
圖1係表示本發明的一實施形態的發光元件的構成之圖。 Fig. 1 is a view showing the configuration of a light-emitting element according to an embodiment of the present invention.
圖2係表示本發明的一實施形態的發光元件的製程之流程圖。 Fig. 2 is a flow chart showing the process of a light-emitting element according to an embodiment of the present invention.
圖3係表示使用圖1所示的發光元件之發光裝置的構成之圖。 Fig. 3 is a view showing the configuration of a light-emitting device using the light-emitting element shown in Fig. 1;
圖4係表示在85℃、85%RH的高溫高濕度環境下的曝露試驗中之亮度的經時變化之特性圖。 Fig. 4 is a graph showing the temporal change of luminance in an exposure test under a high temperature and high humidity environment of 85 ° C and 85% RH.
圖5係表示在150℃的乾燥高溫環境下的曝露試驗中之亮度的經時變化之特性圖。 Fig. 5 is a graph showing the temporal change of the luminance in the exposure test in a dry high-temperature environment at 150 °C.
圖6係表示在200℃的乾燥高溫環境下的曝露試驗中之亮度的經時變化之特性圖。 Fig. 6 is a graph showing the temporal change of the luminance in the exposure test in a dry high temperature environment at 200 °C.
圖7係表示在乾燥高溫環境下的曝露試驗中之曝露溫度與24小時後的發光亮度之關係的特性圖。 Fig. 7 is a characteristic diagram showing the relationship between the exposure temperature in the exposure test in a dry high-temperature environment and the luminance after 24 hours.
以下，針對本發明的實施形態，參照圖面作詳細說明。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
圖1係表示本發明的一實施形態的發光元件10的構成。此發光元件10具備例如，配設在基板11的一面之半導體發光元件12及配設在基板11的另一面之螢光體膜13。此外，圖中，各構成要素的大小係概念性地表示，並非表示實際的尺寸比例。 Fig. 1 shows the configuration of a light-emitting element 10 according to an embodiment of the present invention. The light-emitting element 10 includes, for example, a semiconductor light-emitting element 12 disposed on one surface of the substrate 11 and a phosphor film 13 disposed on the other surface of the substrate 11. In addition, in the figure, the size of each component is conceptually represented, and does not represent the actual dimension ratio.
基板11，例如由形成有半導體發光元件12 的藍寶石晶圓、GaN晶圓、Si晶圓所構成者較佳，例如在400nm至800nm的波段之光透射率越高者越好。又，基板11，例如在使用藍寶石的情況，為使光散射亦可使形成有半導體發光元件12之面的另一面的表面粗糙成毛玻璃狀、緞面狀或浮雕狀。基板11的厚度，例如在藍寶石晶圓方面一般是使用0.2mm以上1.0mm以下者。 The substrate 11 is formed, for example, by a semiconductor light emitting element 12 The sapphire wafer, the GaN wafer, and the Si wafer are preferably formed. For example, the higher the light transmittance in the wavelength range of 400 nm to 800 nm, the better. Further, in the case of using the sapphire, for example, in the case of using the sapphire, the surface of the other surface on which the semiconductor light-emitting element 12 is formed may be roughened into a frosted glass shape, a satin shape or a relief shape. The thickness of the substrate 11 is generally 0.2 mm or more and 1.0 mm or less in terms of sapphire wafer.
此外，基板11可沿用在形成半導體發光元件 12之際所用的形成基板，亦可為與形成基板不同者。例如，可在將半導體發光元件12形成在形成基板後，分離或除去形成基板，或將形成基板的厚度作薄，將半導體發光元件12對與形成基板不同的基板11作配設。 In addition, the substrate 11 can be used in forming a semiconductor light emitting element The forming substrate used at the time of 12 may be different from the forming substrate. For example, after the semiconductor light-emitting element 12 is formed on the substrate, the substrate is separated or removed, or the thickness of the formed substrate is made thin, and the semiconductor light-emitting element 12 is disposed on the substrate 11 different from the substrate.
半導體發光元件12，例如具有將含有發光層的複數個半導體層積層的構造，配設有一對的電極12A、12B。半導體發光元件12例如為LED，且建構成在激發光方面是發出紫外光，藍色光，或綠色光者較佳。其中，半導體發光元件12方面，以發出藍色光者較佳。原因在於能容易獲得白色，並且相對於紫外光會有使周圍的構材劣化等之影響，而藍色光在那樣的影響上較小。此半導體發光元件12，例如以構成基板11之側成為發光面者較佳。 The semiconductor light-emitting element 12 has, for example, a structure in which a plurality of semiconductor layers including a light-emitting layer are laminated, and a pair of electrodes 12A and 12B are disposed. The semiconductor light-emitting element 12 is, for example, an LED, and is preferably configured to emit ultraviolet light, blue light, or green light in terms of excitation light. Among them, in the case of the semiconductor light-emitting element 12, it is preferable to emit blue light. The reason is that white can be easily obtained, and the surrounding member is deteriorated with respect to ultraviolet light, and the blue light is less affected by such influence. For example, the semiconductor light-emitting element 12 is preferably a light-emitting surface on the side constituting the substrate 11.
螢光體膜13，例如直接配設於基板11的另一面。螢光體膜13，例如含有粒子狀的螢光體材料及黏著此螢光體材料的黏合劑，亦可視需要含有填料。又，螢光體膜13係在基板11的另一面上塗布含有螢光體材 料及黏合劑原料的螢光體膜原料，在常溫使之反應，或在500℃以下的溫度作熱處理而形成者。塗布的方法方面，例如可舉出印刷法、噴霧法、依據分配器的描圖法、或噴射法。其中，較佳為印刷法或噴霧法，更較為印刷法。 The phosphor film 13 is directly disposed on the other surface of the substrate 11, for example. The phosphor film 13 contains, for example, a particulate phosphor material and a binder to which the phosphor material is adhered, and may optionally contain a filler. Further, the phosphor film 13 is coated on the other surface of the substrate 11 to contain a fluorescent material. The phosphor film material of the material and the binder raw material is formed by reacting at room temperature or by heat treatment at a temperature of 500 ° C or lower. Examples of the coating method include a printing method, a spray method, a drawing method according to a dispenser, and a spraying method. Among them, a printing method or a spray method is preferred, and a printing method is more preferred.
螢光體材料，例如含有螢光體粒子，亦可於 螢光體粒子的表面形成被覆層。螢光體粒子係例如藉由從半導體發光元件12發光的激發光而發出螢光者，可因應於半導體發光元件12的種類等而選擇。螢光體材料係可使用1種或2種以上的螢光體粒子，在使用複數種的情況，亦可混合使用，又，亦可分成複數層並積層。 Phosphor materials, such as phosphor particles, can also be used The surface of the phosphor particles forms a coating layer. The phosphor particles are emitted by, for example, excitation light emitted from the semiconductor light-emitting element 12, and can be selected depending on the type of the semiconductor light-emitting element 12 and the like. One or two or more kinds of phosphor particles may be used as the phosphor material, and when a plurality of types are used, they may be used in combination, or may be divided into a plurality of layers and laminated.
螢光體粒子方面，例如可舉出 BaMgAl10O17：Eu、ZnS：Ag,Cl、BaAl2S4：Eu或CaMgSi2O6：Eu等之藍色系螢光體；Zn2SiO4：Mn、(Y,Gd)BO3：Tb、ZnS：Cu,Al、(M1)2SiO4：Eu、(M1)(M2)2S：Eu、(M3)3Al5O12：Ce、SiAlON：Eu、CaSiAlON：Eu、(M1)Si2O2N：Eu或(Ba,Sr,Mg)2SiO4：Eu,Mn等之黃色或綠色系螢光體；(M1)3SiO5：Eu或(M1)S：Eu等之黃色、橙色或紅色系螢光體；(Y,Gd)BO3：Eu、Y2O2S：Eu、(M1)2Si5N8：Eu、(M1)AlSiN3：Eu或YPVO4：Eu等之紅色系螢光體。此外，在上述化學式中，M1含有由Ba、Ca、Sr及Mg構成的群當中至少一者，M2含有Ga及Al當中至少一者，M3含有由Y、Gd、Lu及Te構成的群當中至少一者。 Examples of the phosphor particles include blue phosphors such as BaMgAl 10 O 17 :Eu, ZnS:Ag, Cl, BaAl 2 S 4 :Eu or CaMgSi 2 O 6 :Eu; and Zn 2 SiO 4 : Mn, (Y, Gd) BO 3 : Tb, ZnS: Cu, Al, (M1) 2 SiO 4 : Eu, (M1) (M2) 2 S: Eu, (M3) 3 Al 5 O 12 : Ce, SiAlON :Eu, CaSiAlON:Eu, (M1)Si 2 O 2 N:Eu or (Ba,Sr,Mg) 2 SiO 4 :Eu, Mn or the like yellow or green phosphor; (M1) 3 SiO 5 :Eu Or (M1)S: Eu, yellow or orange phosphor; (Y, Gd) BO 3 : Eu, Y 2 O 2 S: Eu, (M1) 2 Si 5 N 8 : Eu, (M1 A red-based phosphor of AlSiN 3 :Eu or YPVO 4 :Eu or the like. Further, in the above chemical formula, M1 contains at least one of a group consisting of Ba, Ca, Sr, and Mg, and M2 contains at least one of Ga and Al, and M3 contains at least one of Y, Gd, Lu, and Te. One.
其中，當考慮螢光體膜13的耐熱性時，螢光 體粒子係以(M3)3Al5O12：Ce、SiAlON：Eu、CaSiAlON：Eu、(M1)Si2O2N：Eu、(M1)2Si5N8：Eu或(M1)AlSiN3：Eu所構成者較佳。M1及M3係如上述。 Here, when considering the heat resistance of the phosphor film 13, the phosphor particles are (M3) 3 Al 5 O 12 :Ce, SiAlON:Eu, CaSiAlON:Eu, (M1)Si 2 O 2 N:Eu, It is preferable that (M1) 2 Si 5 N 8 :Eu or (M1)AlSiN 3 :Eu. M1 and M3 are as described above.
螢光體粒子的被覆層，例如以主成分是含有 由稀土類氧化物、氧化鋯、氧化鈦、氧化鋅、氧化鋁、釔/鋁/石榴石等之釔與鋁的複合氧化物、氧化鎂、以及MgAl2O4等之鋁及鎂的複合氧化物構成的群當中的至少1種金屬氧化物者較佳。原因在於能提升耐水性及耐紫外光等之特性。其中，以稀土類氧化物或氧化鋯較佳。 稀土類氧化物方面，以含有由釔、釓、鈰及鑭構成的群當中至少1種元素者更佳，又，若使用氧化鋯更好。原因在於可獲得較高的效應，且能抑制成本。 The coating layer of the phosphor particles is, for example, a composite oxide containing lanthanum and aluminum such as rare earth oxide, zirconium oxide, titanium oxide, zinc oxide, aluminum oxide, lanthanum/aluminum/garnet, or the like. It is preferable that at least one metal oxide among the group consisting of a composite oxide of aluminum and magnesium such as MgAl 2 O 4 is preferable. The reason is that it can improve the properties of water resistance and ultraviolet light resistance. Among them, a rare earth oxide or zirconium oxide is preferred. In terms of the rare earth oxide, it is more preferable to contain at least one element selected from the group consisting of ruthenium, osmium, iridium and osmium, and it is more preferable to use zirconia. The reason is that a higher effect can be obtained and the cost can be suppressed.
螢光體材料之一次粒子的平均粒徑，例如以 1μm以上20μm以下較佳。原因在於將平均粒徑設小則可抑制色斑、可均一化。但太小時，有不少螢光體材料本身的光學特性降低的情況，且有不少小於1μm的小粒子會二次凝集而喪失微小化效果之情形，故以1μm以上較佳。 The average particle diameter of the primary particles of the phosphor material, for example, It is preferably 1 μm or more and 20 μm or less. The reason is that when the average particle diameter is made small, stains can be suppressed and uniformity can be achieved. However, when it is too small, there are many cases where the optical properties of the phosphor material itself are lowered, and many small particles smaller than 1 μm are agglomerated twice to lose the miniaturization effect, so that it is preferably 1 μm or more.
黏合劑係藉由使含有由依水解或氧化而成為 氧化矽的氧化矽前驅物、矽酸鹽化合物、矽石及非結晶矽所構成的群當中至少1種之黏合劑原料在常溫使之反應，或在500℃以下的溫度作熱處理所獲得者。氧化矽前驅物方面，較佳為例如可舉出以全氫聚矽氮烷、矽酸乙脂、矽酸甲酯作為主成分者。原因在於：此等氧化矽前 驅物容易因常溫或熱處理中之水解或氧化而成為二氧化矽等之氧化矽，可作為黏合劑發揮機能的緣故。此外，黏合劑方面，沒有必要氧化矽前驅物反應而完全成為氧化矽，亦可含有未反應部分或不完全反應部分。 The binder is made by causing the hydrolysis to be caused by hydrolysis or oxidation. A binder raw material of at least one of a group consisting of a cerium oxide precursor of cerium oxide, a cerium compound, a vermiculite, and an amorphous cerium is reacted at a normal temperature or a heat treatment at a temperature of 500 ° C or lower. The cerium oxide precursor is preferably, for example, a perhydropolyazane, ethyl citrate or methyl decanoate as a main component. The reason is: before this oxidation The precursor is easily converted into cerium oxide such as cerium oxide by hydrolysis or oxidation at normal temperature or heat treatment, and can function as a binder. Further, in terms of the binder, it is not necessary to react with the cerium oxide precursor to completely become cerium oxide, and it may contain an unreacted portion or an incompletely reacted portion.
又，矽酸鹽化合物方面，較佳為例如可舉出 矽酸鈉。矽酸鹽化合物可使用脫水狀態者，亦可使用水合物。矽石或非結晶矽方面，較佳為例如，使用奈米大小的超微粒子粉末，例如，使用一次粒徑的平均粒徑是5nm以上100nm以下的超微粒子粉末，使用5nm以上50nm以下的超微粒子粉末更佳。此等矽酸鹽化合物、矽石或非結晶矽係透過於溶媒溶解或分散並熱處理、乾燥而固形化，可作為黏合劑發揮機能。 Further, as the phthalate compound, for example, it is preferably exemplified Sodium citrate. As the citrate compound, a dehydrated state can be used, and a hydrate can also be used. In the case of a vermiculite or an amorphous ruthenium, for example, a nano-sized ultrafine particle powder is used. For example, an ultrafine particle powder having an average particle diameter of a primary particle diameter of 5 nm or more and 100 nm or less is used, and ultrafine particles of 5 nm or more and 50 nm or less are used. The powder is better. These phthalate compounds, vermiculite or amorphous lanthanum are solidified by being dissolved or dispersed in a solvent, heat-treated, and dried, and can function as a binder.
黏合劑原料的熱處理溫度，為減少對基板 11、半導體發光元件12及螢光體材料之熱的影響，故以500℃以下較佳，在有必要使熱的影響更小的情況，以300℃以下更佳，若設為200℃以下更好。又，若使黏合劑原料在常溫反應，則因無熱的影響而較佳。因應基板11、半導體發光元件12及螢光體材料的耐熱特性，選擇黏合劑原料的種類，藉以調節使黏合劑原料在常溫反應，或作幾次熱處理者為宜。又，在螢光體材料因熱而容易氧化並劣化的情況，熱處理之際的環境宜設成氮氣環境等之非氧化環境。 Heat treatment temperature of the binder material to reduce the substrate 11. The influence of the heat of the semiconductor light-emitting device 12 and the phosphor material is preferably 500 ° C or lower, and if it is necessary to reduce the influence of heat, it is preferably 300 ° C or less, and more preferably 200 ° C or less. it is good. Moreover, when the binder raw material is reacted at normal temperature, it is preferred because it has no heat. In view of the heat resistance characteristics of the substrate 11, the semiconductor light-emitting device 12, and the phosphor material, it is preferable to select the type of the binder raw material, thereby adjusting the binder material to be reacted at room temperature or by heat treatment several times. Further, in the case where the phosphor material is easily oxidized and deteriorated by heat, the environment during the heat treatment is preferably a non-oxidizing environment such as a nitrogen atmosphere.
填料係例如調整螢光體材料的填充率者，以 由具透光性的無機材料構成者較佳，可舉出氧化矽粒子、氧化鋁粒子或氧化鋯粒子等。更佳為氧化矽粒子， 其形態可為結晶亦可為玻璃。填料的平均粒徑，例如以與螢光體材料相同的1μm至20μm左右較佳。 The filler is, for example, adjusted to the filling rate of the phosphor material, Preferred examples of the light-transmitting inorganic material include cerium oxide particles, alumina particles, and zirconia particles. More preferably cerium oxide particles, The form may be crystallization or glass. The average particle diameter of the filler is preferably, for example, about 1 μm to 20 μm which is the same as the phosphor material.
螢光體膜13的厚度，例如以10μm以上1mm以下較佳，20μm以上500μm以下更佳。原因在於當太薄時螢光體材料的量變少，難以調色，而太厚時光的散射過度增加使光的吸收顯著而導致難將光取出於外部。螢光體膜13的表面粗糙度，即，螢光體膜13之與基板11反對側的表面的表面粗糙度係以算術平均粗糙度Ra計而為10μm以下較佳，又，螢光體膜13的膜厚分布係以±10%以內較佳。原因在於可抑制色斑、使之均一化、使性能穩定化。螢光體膜13的表面粗糙度或螢光體膜13的膜厚分布亦可例如在形成螢光體膜13後，藉由研磨或研削表面作調整。 The thickness of the phosphor film 13 is preferably 10 μm or more and 1 mm or less, and more preferably 20 μm or more and 500 μm or less. The reason is that the amount of the phosphor material becomes too small when it is too thin, and it is difficult to color, and the excessive scattering of light when it is too thick causes the absorption of light to be remarkable to cause the light to be taken out to the outside. The surface roughness of the phosphor film 13, that is, the surface roughness of the surface of the phosphor film 13 opposite to the substrate 11 is preferably 10 μm or less in terms of arithmetic mean roughness Ra, and further, the phosphor film The film thickness distribution of 13 is preferably within ±10%. The reason is that the stain can be suppressed, homogenized, and the performance can be stabilized. The surface roughness of the phosphor film 13 or the film thickness distribution of the phosphor film 13 can also be adjusted by, for example, grinding or grinding the surface after the phosphor film 13 is formed.
此發光元件10，例如可按以下那樣來製造。圖2係表示此發光元件10的一製程例之流程圖。首先，例如，準備一可形成複數個發光元件10之大小的基板11，於基板11的一面上形成複數個半導體發光元件(步驟S101；半導體發光元件形成步驟)。那時，半導體發光元件12亦可直接形成於基板11的一面上，又，在形成於與基板11不同的形成基板上之後，分離或除去形成基板，或將形成基板的厚度作薄，將半導體發光元件12配設在基板11的一面上亦可。 This light-emitting element 10 can be manufactured, for example, as follows. FIG. 2 is a flow chart showing an example of a process of the light-emitting element 10. First, for example, a substrate 11 having a size of a plurality of light-emitting elements 10 is prepared, and a plurality of semiconductor light-emitting elements are formed on one surface of the substrate 11 (step S101; semiconductor light-emitting element forming step). At that time, the semiconductor light emitting element 12 may be directly formed on one surface of the substrate 11, and after being formed on a different forming substrate from the substrate 11, the substrate may be separated or removed, or the thickness of the formed substrate may be made thin, and the semiconductor will be thin. The light-emitting element 12 may be disposed on one surface of the substrate 11.
其次，例如，於形成有半導體發光元件12之基板11的另一面上形成螢光體膜13(步驟S102；螢光體膜形成步驟)。具體言之，首先，於基板11的另一面 上塗布含有螢光體材料與黏合劑原料的螢光體膜原料。 例如，若為使用印刷法的情況，則將1種或2種以上的螢光體材料、黏合劑原料、稀釋溶媒、填料(視需要)混合而作成膏狀的螢光體膜原料，再以印刷法，例如網版印刷塗布於基板11的另一面上。若藉由網版印刷塗布，則可提高螢光體膜13之面內的膜厚分布之均一性，故較佳。又，例如，若為使用噴霧法的情況，則將1種或2種以上的螢光體材料、黏合劑原料、稀釋溶媒、填料(視需要)混合而作成漿狀的螢光體膜原料，使用噴槍連同噴霧氣體一起塗布於基板11的另一面上。調節噴霧的噴霧直徑，使噴槍以一定的速度一邊橫動一邊均一地移動，藉此可提高螢光體膜13之面內的膜厚分布之均一性，故較佳。塗布亦可反複進行直到成為必要的膜厚為止。 Next, for example, the phosphor film 13 is formed on the other surface of the substrate 11 on which the semiconductor light emitting element 12 is formed (step S102; phosphor film forming step). Specifically, first, on the other side of the substrate 11 A phosphor film material containing a phosphor material and a binder raw material is applied thereon. For example, in the case of using a printing method, one or two or more kinds of phosphor materials, a binder raw material, a diluent solvent, and a filler (if necessary) are mixed to form a paste-like phosphor film material, and then A printing method such as screen printing is applied to the other surface of the substrate 11. If the coating is applied by screen printing, the uniformity of the film thickness distribution in the surface of the phosphor film 13 can be improved, which is preferable. Further, for example, when a spray method is used, one or two or more kinds of phosphor materials, a binder raw material, a diluent solvent, and a filler (if necessary) are mixed to form a slurry-form phosphor film material. A spray gun is applied to the other side of the substrate 11 together with the spray gas. It is preferable to adjust the spray diameter of the spray so that the spray gun is uniformly moved while traversing at a constant speed, whereby the uniformity of the film thickness distribution in the surface of the phosphor film 13 can be improved. The coating can be repeated until it becomes a necessary film thickness.
此外，由於噴霧法是在局部排氣裝置內進 行，所以在噴霧之際會有螢光體膜原料被排氣而導致產量不佳，相較之下網版印刷法沒有那樣的問題，能提高螢光體膜原料之利用效率，故較佳。又，網版印刷法為，在基板側不作遮掩，藉由網版側的遮罩反複進行相同的圖案化，更能僅塗布必要的部位，不會附著於不必要的部分，亦無朝治具等附著，故治具可連續使用，能提高量產時的生產性，故較佳。 In addition, because the spray method is in the local exhaust device Since the phosphor film material is exhausted at the time of spraying, the yield is not good, and the screen printing method does not have such a problem, and the utilization efficiency of the phosphor film material can be improved, which is preferable. Further, in the screen printing method, the same patterning is repeated by the mask on the screen side without being masked on the substrate side, and it is possible to apply only the necessary portions, and it is not attached to unnecessary portions, and there is no cure. It has the same adhesion, so the jig can be used continuously, which can improve the productivity in mass production, so it is preferable.
其次，例如，使已塗布的螢光體膜原料乾燥 以除去稀釋溶媒。在那時，視需要在500℃以下，更佳為300℃以下，再者於200℃以下的範圍加熱亦可。藉此，黏合劑原料依常溫或熱處理而反應，或依熱處理而 固形化。此外，螢光體膜13可形成在基板11的全面上，又，亦可對應於配置在一面上的複數個半導體發光元件12進行圖案化而形成。接著，將配設有半導體發光元件12及螢光體膜13的基板11，例如，按半導體發光元件12切斷而晶片化(步驟S103；晶片化步驟)。藉此可獲得發光元件10。 Second, for example, drying the coated phosphor film material To remove the diluted solvent. At that time, it is preferably 500 ° C or less, more preferably 300 ° C or less, and heating in the range of 200 ° C or less. Thereby, the binder raw material reacts at normal temperature or heat treatment, or according to heat treatment. Solidified. Further, the phosphor film 13 may be formed on the entire surface of the substrate 11, or may be formed by patterning a plurality of semiconductor light-emitting elements 12 arranged on one surface. Then, the substrate 11 on which the semiconductor light-emitting device 12 and the phosphor film 13 are disposed is, for example, cut and wafer-formed by the semiconductor light-emitting device 12 (step S103; wafer formation step). Thereby, the light-emitting element 10 can be obtained.
此外，在上述發光元件10的製程中，雖針對 於基板11的一面上形成半導體發光元件12後，在基板11的另一面上形成螢光體膜13的情況作說明，但亦可於基板11的另一面上形成螢光體膜13後，在基板11的一面上形成半導體發光元件12。 Further, in the manufacturing process of the above-described light-emitting element 10, After the semiconductor light-emitting device 12 is formed on one surface of the substrate 11, the phosphor film 13 is formed on the other surface of the substrate 11. However, after the phosphor film 13 is formed on the other surface of the substrate 11, the phosphor film 13 may be formed on the other surface of the substrate 11. A semiconductor light emitting element 12 is formed on one surface of the substrate 11.
圖3係顯示使用此螢光元件10的發光裝置 20之一構成例。此發光裝置20為配線基板21之上搭載有發光元件10。在配線基板21之上，例如配設有配線21A、21B。發光元件10為，例如將半導體發光元件12設為配線基板21之側，使電極12A、12B與配線21A、21B對應，藉由突塊22A、22B等將倒裝晶片安裝於配線基板21之上。在發光元件10的周圍形成例如反射器框23。發光元件10的周圍亦可不配設密封劑。原因是若以樹脂的密封劑包覆時會導致散熱性降低。又，雖無圖示，但在發光元件10的側部亦可配置密封劑，保護配線基板21上的配線。再者，雖無圖示，但亦能以覆蓋發光元件10的上面之方式配置密封劑。原因在於可減輕因來自外部的水分或有害的氣體直接接觸所導致的影響。此外，此發光裝置20，例如可使用按上述方式製造的發光元件10來製造。 3 is a view showing a light-emitting device using the fluorescent element 10. One of the 20 constituent examples. In the light-emitting device 20, the light-emitting element 10 is mounted on the wiring substrate 21. On the wiring board 21, for example, wirings 21A and 21B are disposed. In the light-emitting element 10, for example, the semiconductor light-emitting device 12 is placed on the side of the wiring substrate 21, the electrodes 12A and 12B are connected to the wirings 21A and 21B, and the flip chip is mounted on the wiring substrate 21 by the bumps 22A and 22B. . A reflector frame 23 is formed around the light emitting element 10, for example. A sealant may not be disposed around the light-emitting element 10. The reason is that if it is coated with a resin sealant, heat dissipation is lowered. Further, although not shown, a sealant may be disposed on the side portion of the light-emitting element 10 to protect the wiring on the wiring substrate 21. Further, although not shown, the sealant can be disposed so as to cover the upper surface of the light-emitting element 10. The reason is that it can alleviate the effects caused by direct contact with moisture or harmful gases from the outside. Further, the light-emitting device 20 can be manufactured, for example, using the light-emitting element 10 manufactured as described above.
如此，依據本實施形態，由於螢光體膜13 主要使用由無機材料構成的黏合劑，故能提升對從半導體發光元件12產生的熱之耐熱性，可謀求高輸出化及高亮度化。又，由於螢光體膜13係塗布包含螢光體材料及含有由依水解或氧化而成為氧化矽的氧化矽前驅物、矽酸鹽化合物、矽石及非結晶矽所構成的群當中至少1種之黏合劑原料之螢光體膜原料而形成，故可提高在螢光體膜13中之螢光體材料的填充率，可減少螢光體膜13的厚度。再者，由於是在基板11的一面上形成半導體發光元件12，在基板11的另一面上形成螢光體膜13，故可將發光元件10及發光裝置20更小型化，並將從螢光體材料產生的熱經由半導體發光元件12擴散，能提升散熱性。再加上，由於螢光體膜13可藉由在常溫反應或在500℃以下的溫度作熱處理而獲得，故能在低溫形成，能抑制螢光體材料之特性劣化。 Thus, according to the embodiment, the phosphor film 13 is Since a binder composed of an inorganic material is mainly used, heat resistance to heat generated from the semiconductor light-emitting device 12 can be improved, and high output and high luminance can be achieved. Further, the phosphor film 13 is coated with at least one of a group including a phosphor material and a cerium oxide precursor, a cerium compound, a vermiculite, and an amorphous cerium which are cerium oxide by hydrolysis or oxidation. Since the phosphor material of the binder material is formed, the filling rate of the phosphor material in the phosphor film 13 can be increased, and the thickness of the phosphor film 13 can be reduced. Further, since the semiconductor light-emitting element 12 is formed on one surface of the substrate 11, and the phosphor film 13 is formed on the other surface of the substrate 11, the light-emitting element 10 and the light-emitting device 20 can be further miniaturized, and the fluorescent light can be emitted. The heat generated by the bulk material is diffused through the semiconductor light emitting element 12, and heat dissipation can be improved. Further, since the phosphor film 13 can be obtained by heat treatment at room temperature or at a temperature of 500 ° C or lower, it can be formed at a low temperature, and deterioration of characteristics of the phosphor material can be suppressed.
再者，若螢光體材料之一次粒子的平均粒徑 設為1μm以上20μm以下，或螢光體膜13的表面粗糙度依算術平均粗糙度Ra計而設為10μm以下，或螢光體膜13的膜厚分布設為±10%以內，則可抑制色斑、可均一化並使性能穩定化。 Furthermore, if the average particle size of the primary particles of the phosphor material When it is 1 μm or more and 20 μm or less, or the surface roughness of the phosphor film 13 is 10 μm or less in terms of arithmetic mean roughness Ra, or the film thickness distribution of the phosphor film 13 is within ±10%, it can be suppressed. The spots are uniform, and the performance is stabilized.
再加上，若於基板11的另一面上形成螢光體 膜13後，切斷基板11而晶片化，則可容易地製造本實施形態的發光元件10及發光裝置20，同時能提升製造效率。 In addition, if a phosphor is formed on the other surface of the substrate 11 After the film 13 is cut and the wafer 11 is cut, the light-emitting element 10 and the light-emitting device 20 of the present embodiment can be easily manufactured, and the manufacturing efficiency can be improved.
首先，準備在一面上形成有半導體發光元件12的基板11。半導體發光元件12使用由氮化物系半導體構成的藍色LED，基板11使用厚度為0.6mm的藍寶石基板。 First, the substrate 11 on which the semiconductor light emitting element 12 is formed is prepared. A blue LED made of a nitride-based semiconductor is used for the semiconductor light-emitting element 12, and a sapphire substrate having a thickness of 0.6 mm is used for the substrate 11.
其次，混合螢光體材料、黏合劑原料、填料及稀釋溶媒，製造螢光體膜原料。螢光體材料方面，使用一次粒子的平均粒徑分別是15μm左右的由Y3Al5O12：Ce構成的螢光體粒子與由CaAlSiN3：Eu構成的螢光體粒子。黏合劑原料方面，在實施例1-1使用矽酸乙脂，在實施例1-2使用全氫聚矽氮烷，在實施例1-3使用矽酸鈉的水合物，或在實施例1-4使用藉溶劑使矽石或非結晶矽的超微粒子粉末懸浮化者。填料方面，使用平均粒徑為15μm左右的二氧化矽粒子。稀釋溶媒方面，使用萜品醇。 Next, a phosphor film material, a binder raw material, a filler, and a diluent solvent are mixed to produce a phosphor film material. In the case of the phosphor material, phosphor particles composed of Y 3 Al 5 O 12 :Ce and phosphor particles composed of CaAlSiN 3 :Eu having an average particle diameter of primary particles of 15 μm or so are used. For the binder raw material, ethyl ruthenate was used in Example 1-1, perhydropolyazoxide was used in Example 1-2, hydrate of sodium citrate was used in Example 1-3, or in Example 1 -4 The use of a solvent to suspend the ultrafine particle powder of vermiculite or amorphous cerium. As the filler, cerium oxide particles having an average particle diameter of about 15 μm are used. In the case of diluting the solvent, terpineol is used.
接著，於基板11的另一面上印刷所製造的螢光體膜原料而塗布成必要的厚度。之後，在150℃使之乾燥，以除去稀釋溶媒。藉此，按各實施例獲得於基板11的另一面上形成有厚度約80μm的螢光體膜13之發白色光的發光元件10。經測定所製造的螢光體膜13的表面粗糙度後，算術平均粗糙度Ra為10μm以下。經測定螢光體膜13的膜厚分布後，為±10%以內。又，針對所製造的各實施例之發光元件10進行通電，進行發光試驗的結果，均獲得良好的白色發光。 Next, the produced phosphor film raw material is printed on the other surface of the substrate 11 and applied to a necessary thickness. Thereafter, it was dried at 150 ° C to remove the diluted solvent. Thereby, a white light-emitting element 10 having a phosphor film 13 having a thickness of about 80 μm was formed on the other surface of the substrate 11 in each of the examples. After the surface roughness of the produced phosphor film 13 is measured, the arithmetic mean roughness Ra is 10 μm or less. After the film thickness distribution of the phosphor film 13 is measured, it is within ±10%. Further, the light-emitting elements 10 of the respective examples produced were energized, and as a result of the luminescence test, good white light emission was obtained.
首先，混合螢光體材料與黏合劑原料，視情況混合稀釋溶媒、填料而製造螢光體膜原料。表1~4顯示各實施例及各比較例中的螢光體材料之螢光體粒子的材質/螢光體粒子的平均粒徑(粒徑)/添加量，填料的材質/平均粒徑(粒徑)/添加量，黏合劑原料的材質/添加量。此外，螢光體材料方面，使用螢光體材料A與螢光體材料B兩者，或任一者。稀釋溶媒方面，使用α-萜品醇。 First, a phosphor film material is prepared by mixing a phosphor material and a binder raw material, and mixing a solvent and a filler as needed. Tables 1 to 4 show the material of the phosphor particles of the phosphor material and the average particle diameter (particle diameter)/addition amount of the phosphor particles in each of the examples and the comparative examples, and the material/average particle diameter of the filler ( Particle size)/addition amount, material/addition amount of binder raw material. Further, as the phosphor material, either or both of the phosphor material A and the phosphor material B are used. For the dilution of the solvent, α-terpineol is used.
其次，在由100mm平方的藍寶石板構成的基板11的另一面上塗布所製造的螢光體膜原料，在熱處理或室溫處理，形成既定厚度的螢光體膜13後，於基板11的一面上形成半導體發光元件12，獲得發光元件10。表2、4顯示各實施例及各比較例中的螢光體膜原料的塗布法、熱處理溫度、螢光體膜13的平均膜厚、螢光體膜13的膜厚分布及螢光體膜13的算術平均粗糙度Ra。表2、4記載所說的塗布法之印刷，具體來說是網版印刷。 Next, the produced phosphor film material is applied onto the other surface of the substrate 11 made of a 100 mm square sapphire plate, and is subjected to heat treatment or room temperature treatment to form a phosphor film 13 having a predetermined thickness, and then on one side of the substrate 11. The semiconductor light emitting element 12 is formed thereon, and the light emitting element 10 is obtained. Tables 2 and 4 show the coating method of the phosphor film raw material in each of the examples and the comparative examples, the heat treatment temperature, the average film thickness of the phosphor film 13, the film thickness distribution of the phosphor film 13, and the phosphor film. The arithmetic mean roughness Ra of 13. Tables 2 and 4 describe the printing of the coating method, specifically screen printing.
此外，螢光體膜13的膜厚之測定係事前測定基板11的厚度，測定已形成螢光體膜13後的厚度，將其差設為膜厚。平均膜厚係針對100mm平方的基板11的縱5列、橫5行共計25點作測定，將其膜厚的平均值設為平均膜厚。又，螢光體膜13的膜厚分布係按如次的計算式算出。此外，最大膜厚為所測定的25點的膜厚中之最大值，最小膜厚為所測定的25點的膜厚中之最小值。 Further, the film thickness of the phosphor film 13 was measured beforehand to measure the thickness of the substrate 11, and the thickness after the phosphor film 13 was formed was measured, and the difference was defined as the film thickness. The average film thickness was measured for a total of 25 points in five vertical rows and five horizontal rows of the substrate 11 of 100 mm square, and the average value of the film thickness was defined as an average film thickness. Moreover, the film thickness distribution of the phosphor film 13 is calculated by the following calculation formula. Further, the maximum film thickness was the maximum of the film thicknesses measured at 25 points, and the minimum film thickness was the minimum of the film thicknesses of 25 points measured.
膜厚分布(%)={(最大膜厚-最小膜厚)/(最大膜厚+最小膜厚)}×100 Film thickness distribution (%) = {(maximum film thickness - minimum film thickness) / (maximum film thickness + minimum film thickness)} × 100
螢光體膜13的算術平均粗糙度Ra係藉由觸針式表面粗糙度測定器作測定。 The arithmetic mean roughness Ra of the phosphor film 13 is measured by a stylus type surface roughness meter.
如表1、2所示，依據將螢光體粒子及填料的平均粒徑設為20μm以下的實施例2-1~2-33，作成螢光體膜13的膜厚分布在±10%以內，算術平均粗糙度Ra為10μm以下。 As shown in Tables 1 and 2, the film thickness distribution of the phosphor film 13 is within ±10% according to Examples 2-1 to 2-33 in which the average particle diameter of the phosphor particles and the filler is 20 μm or less. The arithmetic mean roughness Ra is 10 μm or less.
針對在各實施例及各比較例所製造的螢光體膜13，調查初期特性的初期發光亮度。又，在高溫高濕試驗方面，進行在85℃、85%RH的高溫高濕度環境下之曝露試驗，調查經過2000小時後的發光亮度之降低率。再者，在乾燥高溫試驗方面，進行在150℃或200℃的乾燥高溫環境下之曝露試驗，調查經過2000小時後的發光亮度之降低率。所獲得之結果顯示於表5、6。表5、6中，初期特性的發光亮度係實施例2-27的發光亮度設為100的情況之相對發光亮度。高溫高濕試驗及乾燥高溫試驗中的發光亮度之降低率係來自於各實施例及各比較例中的初期特性的發光亮度之降低率。 The initial luminance of the initial characteristics was examined for the phosphor film 13 produced in each of the examples and the comparative examples. Further, in the high-temperature and high-humidity test, an exposure test was performed under a high-temperature and high-humidity environment of 85 ° C and 85% RH, and the rate of decrease in the luminance of the emitted light after 2000 hours was examined. Further, in the dry high temperature test, an exposure test was conducted in a dry high temperature environment of 150 ° C or 200 ° C, and the rate of decrease in the light emission luminance after 2000 hours passed was examined. The results obtained are shown in Tables 5 and 6. In Tables 5 and 6, the light-emitting luminance of the initial characteristics is the relative light-emitting luminance in the case where the light-emitting luminance of Example 2-27 is 100. The rate of decrease in the luminance of the emitted light in the high-temperature and high-humidity test and the dry high-temperature test was the rate of decrease in the light-emitting luminance from the initial characteristics in each of the examples and the comparative examples.
又，所獲得之結果當中的實施例2-1及比較例2-1的結果顯示於圖4~6。圖4係在85℃、85%RH的高溫高濕度環境下之曝露試驗的結果，圖5係在150℃的乾燥高溫環境下之曝露試驗的結果，圖6係在200℃ 的乾燥高溫環境下之曝露試驗的結果。圖4至圖6中的縱軸係各個初期亮度設為100的情況之相對亮度值。 Further, the results of Example 2-1 and Comparative Example 2-1 among the obtained results are shown in Figs. 4 to 6. Figure 4 shows the results of the exposure test in a high temperature and high humidity environment at 85 ° C and 85% RH, and Fig. 5 shows the results of the exposure test in a dry high temperature environment at 150 ° C. Fig. 6 is at 200 ° C. The results of the exposure test in a dry high temperature environment. The vertical axis in FIGS. 4 to 6 is a relative luminance value in the case where each initial luminance is set to 100.
再者，在大氣烘箱中加熱實施例2-1~2-4 及比較例2-1的螢光體膜13，進行100℃至500℃為止的乾燥高溫環境曝露試驗，調查亮度的經時變化。又，由於在超過200℃的高溫領域，會有螢光體膜13破壞等之可能性，故亦同時進行以目視確認外觀。各溫度的曝露時間設為24小時。所獲得之結果當中的實施例2-1及比較例2-1的結果顯示於圖7。圖7中的縱軸係將各個初期亮度設為100的情況之相對亮度值。此外，雖無圖示，但關於實施例2-2~2-4，亦會獲得與實施例2-1同樣的結果。 Furthermore, heating Examples 2-1 to 2-4 in an atmospheric oven The phosphor film 13 of Comparative Example 2-1 was subjected to a dry high-temperature environment exposure test at 100 ° C to 500 ° C, and the change in luminance over time was examined. Moreover, since the phosphor film 13 may be broken or the like in a high temperature region exceeding 200 ° C, the appearance is visually confirmed at the same time. The exposure time at each temperature was set to 24 hours. The results of Example 2-1 and Comparative Example 2-1 among the obtained results are shown in Fig. 7 . The vertical axis in Fig. 7 is a relative luminance value in a case where each initial luminance is set to 100. Further, although not shown, the same results as in Example 2-1 were obtained also in Examples 2-2 to 2-4.
如表5、6所示，依據本實施例，初期特性的相對發光亮度係80%以上，但在550℃以上且已熱處理的比較例2-2~2-4中，低到70%以下。 As shown in Tables 5 and 6, according to the present embodiment, the relative light-emitting luminance of the initial characteristics was 80% or more, but it was as low as 70% or less in Comparative Examples 2-2 to 2-4 which were heat-treated at 550 ° C or higher.
又，如表5、6及圖4~6所示，在使用矽氧樹脂的比較例2-1中，高溫高濕試驗中的發光亮度降低率為15%，150℃的高溫乾燥試驗中的發光亮度降低率為12%，200℃的乾燥高溫試驗中，螢光體膜在1200小時後剝離，1000小時後的發光亮度降低率為33%。相對地，依據本實施例，在高溫高濕試驗、150℃的高溫乾燥試驗及200℃的乾燥高溫試驗任一者，發光亮度降低率均大幅地改善為7%以下。 Further, as shown in Tables 5 and 6 and Figs. 4 to 6, in Comparative Example 2-1 using a silicone resin, the luminance reduction rate in the high-temperature and high-humidity test was 15%, and in the high-temperature drying test at 150 °C. The luminance reduction rate was 12%. In the dry high temperature test at 200 ° C, the phosphor film was peeled off after 1200 hours, and the luminance reduction rate after 1000 hours was 33%. In contrast, according to the present embodiment, in any of the high-temperature and high-humidity test, the high-temperature drying test at 150 ° C, and the dry high-temperature test at 200 ° C, the light-emitting luminance reduction rate was greatly improved to 7% or less.
再者，如圖7所示，在使用矽氧樹脂的比較例2-1中，亮度維持率隨著溫度變高而降低，螢光體膜在300℃以上會因為熱所導致的化學變化而成粉碎剝離。相對地，實施例3-1~3-4中，無外觀上的變化，亦未見亮度維持率之降低。 Further, as shown in FIG. 7, in Comparative Example 2-1 using a silicone resin, the luminance maintenance ratio decreased as the temperature became higher, and the phosphor film was chemically changed at 300 ° C or higher due to heat. Smashed and peeled off. In contrast, in Examples 3-1 to 3-4, there was no change in appearance, and no decrease in brightness maintenance ratio was observed.
再加上，如表1、2、5所示，相較於螢光體粒子的平均粒徑大於20μm、螢光體膜13的膜厚分布大於±10%、算術平均粗糙度Ra大於10μm的實施例2-34~2-36，若依據螢光體粒子及填料的平均粒徑設為 20μm以下、螢光體膜13的膜厚分布設為±10%以內、算術平均粗糙度Ra設為10μm以下的實施例2-1~2-33，則是提高了初期特性的相對發光亮度。 Further, as shown in Tables 1, 2, and 5, the average particle diameter of the phosphor particles is larger than 20 μm, the film thickness distribution of the phosphor film 13 is more than ±10%, and the arithmetic mean roughness Ra is more than 10 μm. Example 2-34~2-36, if based on the average particle size of the phosphor particles and filler In the examples 2-1 to 2-33 in which the film thickness distribution of the phosphor film 13 is within ±10% and the arithmetic mean roughness Ra is 10 μm or less, the relative light emission luminance of the initial characteristics is improved.
首先，混合螢光體材料、黏合劑原料、填料及稀釋溶媒，製造螢光體膜原料。表7、8顯示各實施例中的螢光體材料的螢光體粒子的材質/螢光體粒子的平均粒徑(粒徑)/添加量，填料的材質/平均粒徑(粒徑)/添加量，黏合劑原料的材質/添加量。稀釋溶媒方面使用α-萜品醇。其次，在由100mm平方的藍寶石板構成的基板11的另一面上藉噴霧法或刷毛塗布所製造的螢光體膜原料，藉熱處理或在室溫處理而形成既定厚度的螢光體膜13。表8顯示各實施例中的螢光體膜原料的塗布法、熱處理溫度、螢光體膜13的平均膜厚、螢光體膜13的膜厚分布、及螢光體膜13的算術平均粗糙度Ra。表8記載所說的塗布法之印刷，具體來說是網版印刷。此外，表7、8亦一併顯示實施例2-1的值。 First, a phosphor film material, a binder raw material, a filler, and a diluent solvent are mixed to produce a phosphor film material. Tables 7 and 8 show the material of the phosphor particles of the phosphor material in each example, the average particle diameter (particle diameter) of the phosphor particles, the amount of addition, and the material/average particle diameter (particle diameter) of the filler. The amount of addition, the material/addition amount of the binder material. Alpha-terpineol was used to dilute the solvent. Next, the produced phosphor film material is applied by spraying or brushing on the other surface of the substrate 11 made of a 100 mm square sapphire plate, and the phosphor film 13 having a predetermined thickness is formed by heat treatment or treatment at room temperature. Table 8 shows the coating method of the phosphor film raw material in each example, the heat treatment temperature, the average film thickness of the phosphor film 13, the film thickness distribution of the phosphor film 13, and the arithmetic mean roughness of the phosphor film 13. Degree Ra. Table 8 describes the printing of the coating method, specifically screen printing. Further, Tables 7 and 8 also show the values of Example 2-1.
如表7、8所示，比起藉由印刷法塗布的實施 例2-1，在以噴霧法或刷毛塗布的實施例3-1、3-2中，螢光體膜13的膜厚分布及算術平均粗糙度Ra変大，初期特性的相對發光亮度降低。即，得知若螢光體膜13以印刷法塗布則較佳。 As shown in Tables 7 and 8, compared to the implementation by coating In Example 3-1, in Examples 3-1 and 3-2 which were applied by a spray method or a brush, the film thickness distribution and the arithmetic mean roughness Ra of the phosphor film 13 were large, and the relative light emission luminance of the initial characteristics was lowered. That is, it is found that the phosphor film 13 is preferably applied by a printing method.
以上，已舉出實施形態說明本發明，本發明 不受限於上述實施形態，可為各種變形。例如，在上述實施形態中，雖已就發光元件10及發光裝置20的構造作具體說明，但亦可建構成具有其他構造。 The present invention has been described above by way of embodiments. It is not limited to the above embodiment, and various modifications are possible. For example, in the above embodiment, the structure of the light-emitting element 10 and the light-emitting device 20 has been specifically described, but it may be constructed to have another structure.
又，在上述實施形態中，雖已針對在基板11 的他面上形成含有1種或2種以上的螢光體材料之螢光體膜13的情況作說明，但亦可為不混用2種螢光體材料而是在基板11的他面上積層形成含有不同螢光體材料的螢光體膜。 Moreover, in the above embodiment, it has been directed to the substrate 11 The case where the phosphor film 13 containing one or two or more kinds of phosphor materials is formed on the surface thereof may be described, but the two kinds of phosphor materials may be mixed without being mixed on the other side of the substrate 11. A phosphor film containing different phosphor materials is formed.
再者，在上述實施形態中，雖已針對半導體 發光元件12是使用LED的情況作說明，但亦可為使用雷射發光二極體等之其他半導體發光元件。特別是，依據本發明，能謀求高輸出化，故可適當使用於需高輸出的用途，例如雷射投影機、LED頭燈、或雷射頭燈。 Furthermore, in the above embodiment, the semiconductor has been targeted. The case where the light-emitting element 12 is an LED is described, but other semiconductor light-emitting elements such as a laser light-emitting diode may be used. In particular, according to the present invention, since it is possible to increase the output, it can be suitably used for applications requiring high output, such as a laser projector, an LED headlight, or a laser headlight.
可使用於採用LED或雷射發光二極體等之半導體發光元件的發光元件及發光裝置。 It can be used for a light-emitting element and a light-emitting device using a semiconductor light-emitting element such as an LED or a laser diode.
10‧‧‧發光元件 10‧‧‧Lighting elements
11‧‧‧基板 11‧‧‧Substrate
12‧‧‧半導體發光元件 12‧‧‧Semiconductor light-emitting components
12A、12B‧‧‧電極 12A, 12B‧‧‧ electrodes
13‧‧‧螢光體膜 13‧‧‧Fluorescent film
Claims (11)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013234577 | 2013-11-13 | ||
| JP2013-234577 | 2013-11-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201535800A true TW201535800A (en) | 2015-09-16 |
| TWI667814B TWI667814B (en) | 2019-08-01 |
Family
ID=53391122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103139149A TWI667814B (en) | 2013-11-13 | 2014-11-12 | Light emitting element, light emitting device and manufacturing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2015119172A (en) |
| KR (1) | KR20150055578A (en) |
| TW (1) | TWI667814B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102044140B1 (en) | 2016-01-22 | 2019-11-13 | 니뽄 도쿠슈 도교 가부시키가이샤 | Wavelength converting member and light emitting device |
| KR102078532B1 (en) | 2016-01-22 | 2020-02-19 | 니뽄 도쿠슈 도교 가부시키가이샤 | Wavelength converting member and light emitting device |
| CN105623658B (en) * | 2016-01-29 | 2017-04-12 | 江苏博睿光电有限公司 | Nitrogen oxide fluorescent powder, preparation method thereof, nitrogen oxide luminous body and light-emitting device |
| JP6852976B2 (en) | 2016-03-29 | 2021-03-31 | 日本特殊陶業株式会社 | Wavelength conversion member, its manufacturing method and light emitting device |
| WO2017188191A1 (en) * | 2016-04-25 | 2017-11-02 | 日本特殊陶業株式会社 | Wavelength conversion member, production method therefor, and light emitting device |
| KR101927464B1 (en) | 2017-04-27 | 2018-12-10 | 성균관대학교산학협력단 | Phosphor paste composition without binder |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003021691A1 (en) * | 2001-09-03 | 2003-03-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device |
| JP2004095765A (en) * | 2002-08-30 | 2004-03-25 | Nichia Chem Ind Ltd | Light emitting device and method for manufacturing the same |
| JP3978514B2 (en) * | 2002-12-24 | 2007-09-19 | 株式会社ナノテム | LIGHT EMITTING DEVICE MANUFACTURING METHOD AND LIGHT EMITTING DEVICE |
| TW200947637A (en) * | 2003-02-27 | 2009-11-16 | Zhang Guo Ying | Glass packaging device of LEDs |
| US7008871B2 (en) * | 2003-07-03 | 2006-03-07 | International Business Machines Corporation | Selective capping of copper wiring |
| JP2007161944A (en) * | 2005-12-16 | 2007-06-28 | Nippon Electric Glass Co Ltd | Phosphor |
| US20090173958A1 (en) * | 2008-01-04 | 2009-07-09 | Cree, Inc. | Light emitting devices with high efficiency phospor structures |
| JP5617371B2 (en) * | 2010-06-21 | 2014-11-05 | コニカミノルタ株式会社 | Substrate with reduced warpage, light emitting device using the same, and manufacturing method thereof |
| DE102010063756A1 (en) * | 2010-12-21 | 2012-06-21 | Osram Ag | Production of phosphor layers using alkali metal silicates |
| CN104010813B (en) * | 2011-12-13 | 2016-08-24 | 东丽株式会社 | The manufacture method of the light emitting diode of duplexer and bandgap wavelength conversion layer |
-
2014
- 2014-11-06 JP JP2014226059A patent/JP2015119172A/en active Pending
- 2014-11-11 KR KR1020140155979A patent/KR20150055578A/en not_active IP Right Cessation
- 2014-11-12 TW TW103139149A patent/TWI667814B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015119172A (en) | 2015-06-25 |
| KR20150055578A (en) | 2015-05-21 |
| TWI667814B (en) | 2019-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI685132B (en) | Light emitting device | |
| TWI667814B (en) | Light emitting element, light emitting device and manufacturing method thereof | |
| JP2015065425A (en) | Light emitting device and manufacturing method of the same | |
| EP2714840B1 (en) | Coated phosphors and light emitting devices including the same | |
| US10975302B2 (en) | Coated narrow band red phosphor | |
| JP2015090887A (en) | Light-emitting element and light-emitting device | |
| JPWO2003092081A1 (en) | Light emitting device using fluorescent material | |
| JP2020500244A (en) | Narrow band green phosphor with coating | |
| JP2006518398A (en) | Coated phosphor, light-emitting device having this type of phosphor, and method for manufacturing the same | |
| TWI541324B (en) | Fluorescent substance material and light-emitting device | |
| JP4187033B2 (en) | Light emitting device | |
| JP2000031530A (en) | Semiconductor light emitter and its manufacture | |
| TWI660526B (en) | Light-emitting element, light-emitting device, and manufacturing method thereof | |
| WO2014021354A1 (en) | Light-emitting device | |
| JP2014043569A (en) | Fluorescent material and light-emitting device | |
| KR101771448B1 (en) | Method for producing phosphor material, phosphor material and light emitting device | |
| JP2013089769A (en) | Light emitting module | |
| WO2023162445A1 (en) | Wavelength conversion member and light emitting device | |
| JP2022150528A (en) | Wavelength conversion member and manufacturing method thereof, and light emitting device | |
| KR20140135638A (en) | Luminescent device | |
| WO2012001821A1 (en) | Fluorescent material and light-emitting device | |
| JP2016028170A (en) | Method for producing coated phosphor, coated phosphor, and white light source |