TW201533944A - Blue light emitting element and light emitting element - Google Patents
Blue light emitting element and light emitting element Download PDFInfo
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本發明係關於一種藍光發光元件及發光元件,詳而言之,係關於一種不包含藍色發光材料之藍光發光元件及發光元件。 The present invention relates to a blue light-emitting element and a light-emitting element, and more particularly to a blue light-emitting element and a light-emitting element that do not include a blue light-emitting material.
有機發光二極體(Organic Light-Emitting Diode;OLED)除了輕薄、可撓與低眩光的優勢外,更擁有高演色性與全頻譜的特殊性能,相當符合目前照明產品的需求,使其成為下一代照明技術的矚目焦點。 In addition to the advantages of light weight, flexibility and low glare, Organic Light-Emitting Diode (OLED) has high color rendering and full spectrum performance, which is in line with the needs of current lighting products, making it the next The focus of a generation of lighting technology.
近幾年,OLED之R、G、B發光材料的效率及壽命有明顯的進步,其中,綠色磷光材料的效率早已突破100lm/W,壽命表現也是各色光之冠,可達數十萬小時,惟白光OLED元件中最關鍵的藍色發光材料則相對落後。 In recent years, the efficiency and lifetime of OLED R, G, B luminescent materials have improved significantly. Among them, the efficiency of green phosphorescent materials has already exceeded 100lm/W, and the life performance is also the crown of all colors, up to hundreds of thousands of hours. However, the most critical blue luminescent material in white light OLED components is relatively backward.
目前藍色磷光材料效率雖然已可做到20.4cd/A,但其壽命僅有數百小時。目前多數的文獻是以磷光材料雙(4,6-二氟苯基吡啶-N,C2)吡啶甲醯合銥(FIrpic)為主要的藍色磷光材料,FIrpic的效率高但壽命不佳,因此全磷光的白光OLED元件雖然效率高,卻因為壽命短而無法應用於照 明。另外,效率較差之藍色螢光材料,其效率僅10.2cd/A,但壽命可達3萬小時,因此暫時為業界所採用,一般被稱為Hybrid式的白光OLED元件。 At present, although the efficiency of blue phosphorescent materials can be achieved at 20.4 cd/A, its lifetime is only several hundred hours. At present, most of the literatures are blue phosphorescent materials based on phosphorescent material bis(4,6-difluorophenylpyridine-N,C2)pyridinium ruthenium (FIrpic). FIrpic has high efficiency but poor lifetime. The fully phosphorescent white OLED device is highly efficient, but cannot be applied to the photo because of its short life. Bright. In addition, the less efficient blue fluorescent material has an efficiency of only 10.2 cd/A, but its lifetime is up to 30,000 hours. Therefore, it is temporarily used in the industry and is generally called a Hybrid type white OLED element.
因此,如何不使用藍色發光材料(藍色磷光或藍色螢光材料)而發展出高效率白光OLED元件,為目前市場上的關鍵議題。 Therefore, how to develop high-efficiency white OLED components without using blue luminescent materials (blue phosphorescent or blue fluorescent materials) is a key issue on the market today.
一種藍光發光元件,包括:一電極層;一第一金屬層;一第二金屬層,係形成於該電極層與該第一金屬層之間;以及一有機材料層,係形成於該第一金屬層與該第二金屬層之間,該有機材料層包括一藍位移發光層,其中,該藍位移發光層之一第一發光頻譜的波峰範圍為490nm~550nm。 A blue light emitting device comprising: an electrode layer; a first metal layer; a second metal layer formed between the electrode layer and the first metal layer; and an organic material layer formed on the first Between the metal layer and the second metal layer, the organic material layer comprises a blue displacement light-emitting layer, wherein a peak of the first light-emitting spectrum of the blue-shifted light-emitting layer ranges from 490 nm to 550 nm.
一種發光元件,包括:一電極層;一第一金屬層;一第二金屬層,係形成於該電極層與該第一金屬層之間;以及一有機材料層,係形成於該第一金屬層與該第二金屬層之間,該有機材料層包括一藍位移發光層及一綠色發光層,其中,該藍位移發光層之一第一發光頻譜的波峰藉由該第一金屬層與該第二金屬層之間的表面電漿耦合而位移至一第二發光頻譜的波峰,該第一發光頻譜的波峰範圍為490nm~550nm,該第二發光頻譜的波峰小於510nm,且該第二發光頻譜的波峰範圍小於該第一發光頻譜的波峰範圍,其中,該有機材料層還包括一摻雜材料,係摻雜於該藍位移發光層或該綠色發光層中。 A light-emitting element comprising: an electrode layer; a first metal layer; a second metal layer formed between the electrode layer and the first metal layer; and an organic material layer formed on the first metal Between the layer and the second metal layer, the organic material layer includes a blue displacement light-emitting layer and a green light-emitting layer, wherein a peak of the first light-emitting spectrum of the blue-shifted light-emitting layer is performed by the first metal layer The surface between the second metal layers is coupled to the peak of a second illuminating spectrum, the peak of the first illuminating spectrum is 490 nm to 550 nm, the peak of the second illuminating spectrum is less than 510 nm, and the second illuminating The peak range of the spectrum is smaller than the peak range of the first illuminating spectrum, wherein the organic material layer further comprises a doping material doped in the blue displacement luminescent layer or the green luminescent layer.
一種發光元件,包括:一電極層;一第一金屬層;一第二金屬層,係形成於該電極層與該第一金屬層之間;以及一有機材料層,係形成於該第一金屬層與該第二金屬層之間,該有機材料層包括一藍位移發光層及一綠色發光層,其中,該藍位移發光層之一第一發光頻譜的波峰藉由該第一金屬層與該第二金屬層之間的表面電漿耦合而位移至一第二發光頻譜的波峰,該第一發光頻譜的波峰範圍為490nm~550nm,該第二發光頻譜的波峰小於510nm,且該第二發光頻譜的波峰範圍小於該第一發光頻譜的波峰範圍,該發光元件還包括一摻雜有一摻雜材料之發光層,其係形成於該電極層之外側,使該電極層夾置於該發光層與該有機材料層之間。 A light-emitting element comprising: an electrode layer; a first metal layer; a second metal layer formed between the electrode layer and the first metal layer; and an organic material layer formed on the first metal Between the layer and the second metal layer, the organic material layer includes a blue displacement light-emitting layer and a green light-emitting layer, wherein a peak of the first light-emitting spectrum of the blue-shifted light-emitting layer is performed by the first metal layer The surface between the second metal layers is coupled to the peak of a second illuminating spectrum, the peak of the first illuminating spectrum is 490 nm to 550 nm, the peak of the second illuminating spectrum is less than 510 nm, and the second illuminating The peak range of the spectrum is smaller than the peak range of the first illuminating spectrum, and the illuminating element further comprises a luminescent layer doped with a doping material, which is formed on the outer side of the electrode layer, so that the electrode layer is sandwiched between the luminescent layer Between the layer of organic material.
一種發光元件,包括:一電極層;一第一金屬層;一第二金屬層,係形成於該電極層與該第一金屬層之間,該第二金屬層包括一金屬部及一開口部;以及一有機材料層,係形成於該第一金屬層與該第二金屬層之間,該有機材料層包括一藍位移發光層,其中,該藍位移發光層之一第一發光頻譜的波峰藉由該第一金屬層與該金屬部之間的表面電漿耦合而位移至一第二發光頻譜的波峰,該第一發光頻譜的波峰範圍為490nm~550nm,該第二發光頻譜的波峰小於510nm,且該第二發光頻譜的波峰範圍小於該第一發光頻譜的波峰範圍,其中,該藍位移發光層摻雜有一摻雜材料。 A light-emitting element comprises: an electrode layer; a first metal layer; a second metal layer formed between the electrode layer and the first metal layer, the second metal layer comprising a metal portion and an opening portion And an organic material layer formed between the first metal layer and the second metal layer, the organic material layer comprising a blue displacement light emitting layer, wherein a peak of the first light emitting spectrum of the blue displacement light emitting layer Displaced by a surface of the first metal layer and the metal portion to a peak of a second illuminating spectrum, the peak of the first illuminating spectrum is in the range of 490 nm to 550 nm, and the peak of the second illuminating spectrum is smaller than 510 nm, and the peak range of the second illuminating spectrum is smaller than the peak range of the first illuminating spectrum, wherein the blue displacing layer is doped with a doping material.
一種發光元件,包括:一電極層;一第一金屬層;一 第二金屬層,係形成於該電極層與該第一金屬層之間,該第二金屬層包括一金屬部及一開口部;以及一有機材料層,係形成於該第一金屬層與該第二金屬層之間,該有機材料層包括一藍位移發光層,其中,該藍位移發光層之一第一發光頻譜的波峰藉由該第一金屬層與該金屬部之間的表面電漿耦合而位移至一第二發光頻譜的波峰,該第一發光頻譜的波峰範圍為490nm~550nm,該第二發光頻譜的波峰小於510nm,其中,且該第二發光頻譜的波峰範圍小於該第一發光頻譜的波峰範圍,該發光元件還包括一摻雜有一摻雜材料之發光層,係形成於該電極層之外側,使該電極層夾置於該發光層與該有機材料層之間。 A light-emitting element comprising: an electrode layer; a first metal layer; a second metal layer is formed between the electrode layer and the first metal layer, the second metal layer includes a metal portion and an opening portion; and an organic material layer is formed on the first metal layer and the Between the second metal layers, the organic material layer includes a blue displacement light-emitting layer, wherein a peak of the first light-emitting spectrum of the blue-shifted light-emitting layer is surface-plasma between the first metal layer and the metal portion Coupling and shifting to a peak of a second illuminating spectrum, the peak of the first illuminating spectrum is 490 nm to 550 nm, and the peak of the second illuminating spectrum is less than 510 nm, wherein a peak range of the second illuminating spectrum is smaller than the first The light-emitting element further includes a light-emitting layer doped with a doping material, and is formed on the outer side of the electrode layer, so that the electrode layer is sandwiched between the light-emitting layer and the organic material layer.
一種發光元件,包括:一第一電極層;一第二電極層;一載子產生層,係形成於該第一電極層與該第二電極層之間;一第一金屬層,係形成於該載子產生層之中;一第二金屬層,係形成於該第一電極層與該載子產生層之間;一第一有機材料層,係形成於該第一金屬層與該第二金屬層之間,該第一有機材料層包括一藍位移發光層,其中,該藍位移發光層之一第一發光頻譜的波峰藉由該第一金屬層與該第二金屬層之間的表面電漿耦合而位移至一第二發光頻譜的波峰,該第一發光頻譜的波峰範圍為490nm~550nm,該第二發光頻譜的波峰小於510nm,且該第二發光頻譜的波峰範圍小於該第一發光頻譜的波峰範圍;以及一第二有機材料層,係形成於該載子產生層與該第二電極層之間,其中,該第二有機材料層還包括一摻雜 有一第一摻雜材料及一第二摻雜材料之發光層。 A light-emitting element comprising: a first electrode layer; a second electrode layer; a carrier generating layer formed between the first electrode layer and the second electrode layer; and a first metal layer formed on The second metal layer is formed between the first electrode layer and the carrier generating layer; a first organic material layer is formed on the first metal layer and the second Between the metal layers, the first organic material layer includes a blue displacement light-emitting layer, wherein a peak of the first light-emitting spectrum of the blue-shifted light-emitting layer is a surface between the first metal layer and the second metal layer The plasma is coupled to a peak of a second illuminating spectrum, the peak of the first illuminating spectrum is 490 nm to 550 nm, the peak of the second illuminating spectrum is less than 510 nm, and the peak range of the second illuminating spectrum is smaller than the first a peak range of the luminescence spectrum; and a second organic material layer formed between the carrier generation layer and the second electrode layer, wherein the second organic material layer further comprises a doping A light-emitting layer having a first doping material and a second doping material.
一種發光元件,包括:一電極層;一第一金屬層;一載子產生層,係形成於該電極層與該第一金屬層之間;一第二金屬層,係形成於該載子產生層之中;一第一有機材料層,係形成於該電極層與該載子產生層之間,以及一第二有機材料層,係形成於該第一金屬層與該第二金屬層之間,該第二有機材料層包括一藍位移發光層,其中,該藍位移發光層之一第一發光頻譜的波峰藉由該第一金屬層與該第二金屬層之間的表面電漿耦合而位移至一第二發光頻譜的波峰,該第一發光頻譜的波峰範圍為490nm~550nm,該第二發光頻譜的波峰小於510nm,且該第二發光頻譜的波峰範圍小於該第一發光頻譜的波峰範圍。 A light-emitting element comprising: an electrode layer; a first metal layer; a carrier generating layer formed between the electrode layer and the first metal layer; and a second metal layer formed on the carrier a layer of a first organic material formed between the electrode layer and the carrier generating layer, and a second organic material layer formed between the first metal layer and the second metal layer The second organic material layer includes a blue displacement light-emitting layer, wherein a peak of the first light-emitting spectrum of the blue-shifted light-emitting layer is coupled by a surface plasma between the first metal layer and the second metal layer Displaced to a peak of a second illuminating spectrum, the peak of the first illuminating spectrum is 490 nm to 550 nm, the peak of the second illuminating spectrum is less than 510 nm, and the peak range of the second illuminating spectrum is smaller than the peak of the first illuminating spectrum range.
1‧‧‧基板 1‧‧‧Substrate
2‧‧‧電極層 2‧‧‧electrode layer
21‧‧‧第一電極層 21‧‧‧First electrode layer
22‧‧‧第二電極層 22‧‧‧Second electrode layer
3‧‧‧第二金屬層 3‧‧‧Second metal layer
31‧‧‧金屬部 31‧‧‧Metal Department
32‧‧‧開口部 32‧‧‧ openings
33‧‧‧高階梯部 33‧‧‧High Steps
34‧‧‧低階梯部 34‧‧‧Low step
4‧‧‧有機材料層 4‧‧‧Organic material layer
40、40a、410、420’‧‧‧藍位移發光層 40, 40a, 410, 420'‧‧‧ blue displacement luminescent layer
40b、410a‧‧‧綠色發光層 40b, 410a‧‧‧Green light-emitting layer
40’、410’、410b、420‧‧‧發光層 40', 410', 410b, 420‧‧ ‧ luminescent layer
41‧‧‧第一有機材料層 41‧‧‧First organic material layer
411、422、43‧‧‧電洞注入/傳輸層 411, 422, 43‧‧‧ hole injection/transport layer
412、421、44‧‧‧電子注入/傳輸層 412, 421, 44‧‧‧Electronic injection/transport layer
42‧‧‧第二有機材料層 42‧‧‧Second layer of organic material
5‧‧‧第一金屬層 5‧‧‧First metal layer
51‧‧‧金屬層 51‧‧‧metal layer
6‧‧‧導電層 6‧‧‧ Conductive layer
7‧‧‧載子產生層 7‧‧‧carrier generation layer
D1、D2‧‧‧厚度 D 1 , D 2 ‧‧‧ thickness
D3‧‧‧距離 D 3 ‧‧‧Distance
第1A圖係本發明之第一實施例之結構示意圖。 Fig. 1A is a schematic structural view of a first embodiment of the present invention.
第1B圖係本發明之第一實施例之一實施型態之結構示意圖。 Fig. 1B is a schematic view showing the configuration of an embodiment of the first embodiment of the present invention.
第2圖係本發明之第二實施例之結構示意圖。 Figure 2 is a schematic view showing the structure of a second embodiment of the present invention.
第3圖係本發明之第三實施例之結構示意圖。 Figure 3 is a schematic view showing the structure of a third embodiment of the present invention.
第4圖係本發明之第四實施例之結構示意圖。 Figure 4 is a schematic view showing the structure of a fourth embodiment of the present invention.
第5圖係本發明之第五實施例之結構示意圖。 Figure 5 is a schematic view showing the structure of a fifth embodiment of the present invention.
第6圖係本發明之第六實施例之結構示意圖。 Figure 6 is a schematic view showing the structure of a sixth embodiment of the present invention.
第7圖係本發明之第七實施例之結構示意圖。 Figure 7 is a schematic view showing the structure of a seventh embodiment of the present invention.
第8圖係本發明之第八實施例之結構示意圖。 Figure 8 is a schematic view showing the structure of an eighth embodiment of the present invention.
第9圖係本發明之第九實施例之結構示意圖。 Figure 9 is a schematic view showing the structure of a ninth embodiment of the present invention.
第10圖係本發明之第十實施例之結構示意圖。 Figure 10 is a schematic view showing the structure of a tenth embodiment of the present invention.
第11圖係本發明之第十一實施例之結構示意圖。 Figure 11 is a schematic view showing the structure of an eleventh embodiment of the present invention.
第12圖係本發明之第十二實施例之結構示意圖。 Figure 12 is a schematic view showing the structure of a twelfth embodiment of the present invention.
第13圖係本發明之第十三實施例之結構示意圖。 Figure 13 is a schematic view showing the structure of a thirteenth embodiment of the present invention.
第14圖係本發明之表面電漿耦合電場分佈圖示意圖。 Figure 14 is a schematic diagram showing the coupled electric field distribution of the surface plasma of the present invention.
第15和16圖係本發明之模擬計算表面電漿耦合之反射率與波長關係結果。 Figures 15 and 16 are graphs showing the results of the reflectance versus wavelength for the simulated surface acoustical coupling of the present invention.
第17圖係本發明之波長位移示意圖。 Figure 17 is a schematic diagram of the wavelength shift of the present invention.
第18圖係本發明之白光頻譜示意圖。 Figure 18 is a schematic diagram of the white light spectrum of the present invention.
以下藉由特定的具體實施例說明本發明之實施方式,熟習此項技藝之人士可由本文所揭示之內容輕易地瞭解本發明之其他優點及功效。須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。 The embodiments of the present invention are described below by way of specific examples, and those skilled in the art can readily appreciate the other advantages and functions of the present invention. It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered.
根據第1A圖說明本發明之第一實施例,本發明之藍光發光元件包括依序堆疊之電極層2、第二金屬層3、包含藍位移發光層40的有機材料層4、及第一金屬層5。於本實施例中,基板1設置於電極層2的外側,惟並不以此為限,其亦可設置於第一金屬層5的外側,且基板1可例如 透明基板。 A first embodiment of the present invention will be described with reference to FIG. 1A. The blue light emitting device of the present invention comprises an electrode layer 2, a second metal layer 3, an organic material layer 4 including a blue displacement light emitting layer 40, and a first metal. Layer 5. In this embodiment, the substrate 1 is disposed on the outer side of the electrode layer 2, but not limited thereto, and may be disposed on the outer side of the first metal layer 5, and the substrate 1 may be, for example, Transparent substrate.
電極層2與第一金屬層5其中一者為陽極、另一者為陰極。電極層2為透明電極,例如金屬氧化物透明導電材料(如ITO、IZO等),第一金屬層5為反射電極,其厚度一般大於20nm,其中所述金屬可為金、銀、鋁、鉑、鈀、鋅、鎳、銅、鉬、鉻等或前述任意組合的合金。 One of the electrode layer 2 and the first metal layer 5 is an anode and the other is a cathode. The electrode layer 2 is a transparent electrode, such as a metal oxide transparent conductive material (such as ITO, IZO, etc.), and the first metal layer 5 is a reflective electrode, and the thickness thereof is generally greater than 20 nm, wherein the metal may be gold, silver, aluminum, platinum. An alloy of palladium, zinc, nickel, copper, molybdenum, chromium, or the like, or any combination of the foregoing.
第二金屬層3形成於電極層2與第一金屬層5之間。第二金屬層3可包括金屬層、奈米金屬線層、高低階梯狀金屬層或其組合,其中,金屬可為金、銀、鋁、鉑、鈀、鋅、鎳、銅、鉬、鉻等或前述任意組合的合金。第二金屬層3的厚度D2範圍約在5~20nm之間。 The second metal layer 3 is formed between the electrode layer 2 and the first metal layer 5. The second metal layer 3 may include a metal layer, a nanowire layer, a high and low stepped metal layer, or a combination thereof, wherein the metal may be gold, silver, aluminum, platinum, palladium, zinc, nickel, copper, molybdenum, chromium, or the like. Or an alloy of any combination of the foregoing. The thickness D 2 of the second metal layer 3 ranges between about 5 and 20 nm.
有機材料層4形成於第二金屬層3和第一金屬層5之間,包括一藍位移發光層40,其中,該藍位移發光層40之第一發光頻譜的波峰範圍為490~550nm。另外,有機材料層4中於藍位移發光層40靠近陽極的一側包括電洞注入層(hole injection layer;HIL)(未繪示)和電洞傳輸層(hole transporting layer;HTL)(未繪示),靠近陰極的一側包括電子傳輸層(Electron transporting layer;ETL)(未繪示)和電子注入層(electron injection layer;EIL)(未繪示),其中,電洞注入層可為HAT-CN,這樣的設計可協助陽極電洞的注入,藍位移發光層40可為磷光或螢光材料。 The organic material layer 4 is formed between the second metal layer 3 and the first metal layer 5, and includes a blue-shifted light-emitting layer 40. The peak of the first light-emitting spectrum of the blue-shifted light-emitting layer 40 ranges from 490 to 550 nm. In addition, a side of the organic material layer 4 adjacent to the anode of the blue displacement light-emitting layer 40 includes a hole injection layer (HIL) (not shown) and a hole transporting layer (HTL) (not drawn). The side near the cathode includes an electron transport layer (ETL) (not shown) and an electron injection layer (EIL) (not shown), wherein the hole injection layer can be HAT -CN, such a design can assist in the injection of the anode hole, and the blue displacement luminescent layer 40 can be a phosphorescent or fluorescent material.
於第1A圖所示之第一實施例中,藍光發光元件可發出藍光,此是由於當有機材料層4具有一厚度D1時,第一金屬層5和第二金屬層3之表面電漿(surface plasmon)耦 合,導致有機材料層4產生發光增益(light enhancement)和波長位移(wavelength shift)現象,使得原本發出綠光或藍綠光的藍位移發光層40,能藉由內部的表面電漿耦合而發出藍位移之後的藍光,換言之,藍位移發光層40之一第一發光頻譜的波峰藉由第一金屬層5與第二金屬層3之間的表面電漿耦合而位移至一第二發光頻譜的波峰,其中,該第一發光頻譜的波峰範圍為490nm~550nm,該第二發光頻譜的波峰小於該第一發光頻譜的波峰,即小於510nm,藉此發出藍光。此外,若第一金屬層5和第二金屬層3的厚度D2相同(例如皆約20nm),則有機材料層4中的藍位移發光層40至第二金屬層3的距離D3與第一金屬層5與第二金屬層3間的距離(即有機材料層4的厚度D1)之比值約為0.5,使有機材料層4產生較佳的發光增益與波長位移現象;若第一金屬層5和第二金屬層3的厚度D2不相同(例如第一金屬層5約100nm,而第二金屬層3約20nm),則有機材料層4中的藍位移發光層40至第二金屬層3的距離D3與第一金屬層5與第二金屬層3間的距離(即有機材料層4的厚度D1)之比值約大於0.5,使有機材料層4產生較佳的發光增益與波長位移現象。另外,如第1B圖所示,第一金屬層5亦可為一多層結構,該多層結構中靠近該有機材料層4之一金屬層51的材料與第二金屬層3的材料相同,例如皆為銀。 Figure 1A in the first embodiment, the blue light emitting element emits blue light may be shown, this is because when the organic material layer 1 has a thickness D 4, a first metal layer 5 and the second metal layer 3 of the surface plasmon (surface plasmon) coupling causes the organic material layer 4 to produce a light enhancement and a wavelength shift phenomenon, so that the blue displacement light-emitting layer 40 that originally emits green or blue-green light can be electrically charged by the internal surface. The blue light after the blue shift is coupled, in other words, the peak of the first light-emitting spectrum of one of the blue-shifted light-emitting layers 40 is displaced to the first by the surface plasma coupling between the first metal layer 5 and the second metal layer 3. The peak of the second illuminating spectrum, wherein the peak of the first illuminating spectrum ranges from 490 nm to 550 nm, and the peak of the second illuminating spectrum is smaller than the peak of the first illuminating spectrum, that is, less than 510 nm, thereby emitting blue light. In addition, if the thicknesses D 2 of the first metal layer 5 and the second metal layer 3 are the same (for example, both are about 20 nm), the distance D 3 of the blue-shifted light-emitting layer 40 to the second metal layer 3 in the organic material layer 4 is the same The ratio of the distance between a metal layer 5 and the second metal layer 3 (ie, the thickness D 1 of the organic material layer 4) is about 0.5, so that the organic material layer 4 produces a better luminescence gain and wavelength shift phenomenon; The thickness D 2 of the layer 5 and the second metal layer 3 are different (for example, the first metal layer 5 is about 100 nm, and the second metal layer 3 is about 20 nm), and the blue light-emitting layer 40 to the second metal in the organic material layer 4 The ratio of the distance D 3 of the layer 3 to the distance between the first metal layer 5 and the second metal layer 3 (ie, the thickness D 1 of the organic material layer 4) is greater than about 0.5, so that the organic material layer 4 produces a better luminous gain and Wavelength shift phenomenon. In addition, as shown in FIG. 1B, the first metal layer 5 may also be a multi-layer structure in which the material of the metal layer 51 adjacent to one of the organic material layers 4 is the same as the material of the second metal layer 3, for example, for example. All are silver.
接著,參閱第2圖說明本發明之第二實施例,與第一實施例的差異在於,第二金屬層3包括一金屬部31和一開 口部32,如第2圖所示,第二金屬層為可為網格狀金屬層或光柵狀金屬層,利用熱蒸鍍、電子束蒸鍍、濺鍍蒸鍍成膜並進行微影蝕刻可形成網格狀金屬層或光柵狀金屬層,另外,第二金屬層3還可為奈米線所組成之金屬層。第二金屬層3的材料可為鋁、金、銀、鉻等高導電且高穿透之金屬、或複合材料如鉬/鋁/鉬合金,網格狀金屬層的結構可為垂直網格、正六邊形網格或是其他圖形。 Next, a second embodiment of the present invention will be described with reference to FIG. 2, which differs from the first embodiment in that the second metal layer 3 includes a metal portion 31 and an opening. The mouth portion 32, as shown in Fig. 2, the second metal layer may be a mesh metal layer or a grating metal layer, and is formed by thermal evaporation, electron beam evaporation, sputtering deposition, and photolithography. A mesh metal layer or a grating metal layer may be formed. Further, the second metal layer 3 may also be a metal layer composed of nano wires. The material of the second metal layer 3 may be a highly conductive and highly penetrating metal such as aluminum, gold, silver or chromium, or a composite material such as a molybdenum/aluminum/molybdenum alloy, and the structure of the mesh metal layer may be a vertical grid. A regular hexagonal grid or other graphic.
於第2圖所示之第二實施例中,藍光發光元件可發出藍光和綠光(或藍綠光)。藍位移發光層40之一第一發光頻譜的波峰藉由第一金屬層5與金屬部31之間的表面電漿耦合而位移至一第二發光頻譜的波峰,而第一發光頻譜的波峰係不會藉由第一金屬層5和開口部32而改變。詳言之,對應網格狀金屬層的開口部32的有機材料層4所發出的光為未藍位移之增益後的綠光;而對應網格狀金屬層的金屬部31的有機材料層4所發出的光為位移後的藍光,且開口率(亦即(有機材料層4的發光面積-第二金屬層3的面積)/有機材料層4的發光面積)越大,藍位移後的藍光強度越弱,色溫越低;反之,開口率越小,藍位移後的藍光強度越強,色溫越高,亦即金屬部31的面積越大,發出藍光的發光面積越大。 In the second embodiment shown in Fig. 2, the blue light-emitting element emits blue light and green light (or blue-green light). The peak of the first light-emitting spectrum of one of the blue-shifted light-emitting layers 40 is displaced to the peak of a second light-emitting spectrum by the surface plasma coupling between the first metal layer 5 and the metal portion 31, and the peak of the first light-emitting spectrum It is not changed by the first metal layer 5 and the opening portion 32. In detail, the light emitted by the organic material layer 4 corresponding to the opening portion 32 of the mesh metal layer is the green light having the gain of the blue displacement; and the organic material layer 4 corresponding to the metal portion 31 of the mesh metal layer The emitted light is the shifted blue light, and the aperture ratio (that is, (the light-emitting area of the organic material layer 4 - the area of the second metal layer 3) / the light-emitting area of the organic material layer 4) is larger, and the blue light after the blue shift The weaker the intensity, the lower the color temperature; conversely, the smaller the aperture ratio, the stronger the blue light intensity after blue shift, and the higher the color temperature, that is, the larger the area of the metal portion 31, the larger the light-emitting area that emits blue light.
接著,參閱第3圖說明本發明之第三實施例,與第一實施例的差異在於,第二金屬層3為高低階梯狀金屬層。於第3圖所示之第三實施例中,藍光發光元件可發出深藍光和淺藍光,詳言之,對應第二金屬層3的高階梯部33 的有機材料層4所發出的光為較深的藍色(dark blue);對應第二金屬層3的低階梯部34的有機材料層4所發出的光為較淺的藍色(light blue),另外,較淺的藍光或可視為藍綠光。高階梯部33厚度約為5~20nm,低階梯部34厚度約為5~10nm,且高階梯部33厚度大於低階梯部34厚度。 Next, a third embodiment of the present invention will be described with reference to Fig. 3, which differs from the first embodiment in that the second metal layer 3 is a high-low stepped metal layer. In the third embodiment shown in FIG. 3, the blue light emitting element emits deep blue light and light blue light, in detail, corresponding to the high step portion 33 of the second metal layer 3. The light emitted by the organic material layer 4 is dark blue; the light emitted by the organic material layer 4 corresponding to the low step portion 34 of the second metal layer 3 is light blue. In addition, a lighter blue light may be considered as blue-green light. The high step portion 33 has a thickness of about 5 to 20 nm, the low step portion 34 has a thickness of about 5 to 10 nm, and the high step portion 33 has a thickness larger than the low step portion 34.
另外,如第4圖所示之第四實施例,有機材料層4與第二金屬層3之間還可包括至少一導電層6,第二金屬層3包括金屬部31及開口部32,導電層6為圖案化透明導電層。於第4圖所示之結構中,電極層2為陽極,第一金屬層5為陰極,有機材料層4還包括形成於藍位移發光層40與第二金屬層3之間的一電洞注入/傳輸層43,及形成於藍位移發光層40與第一金屬層5之間的一電子注入/傳輸層44。 In addition, as shown in the fourth embodiment, the organic material layer 4 and the second metal layer 3 may further include at least one conductive layer 6. The second metal layer 3 includes a metal portion 31 and an opening portion 32. Layer 6 is a patterned transparent conductive layer. In the structure shown in FIG. 4, the electrode layer 2 is an anode, the first metal layer 5 is a cathode, and the organic material layer 4 further includes a hole injection formed between the blue displacement light-emitting layer 40 and the second metal layer 3. a transfer layer 43, and an electron injection/transport layer 44 formed between the blue displacement light-emitting layer 40 and the first metal layer 5.
接著參閱第5圖所示之第五實施例。於本實施例中,第二金屬層3包括金屬層、奈米金屬線層、高低階梯狀金屬層或其組合,有機材料層4包括藍位移發光層40a、綠色發光層40b和摻雜材料,且該摻雜材料可存在於藍位移發光層40a或綠色發光層40b任意一者或二者中。該綠色發光層40b的發光頻譜的波峰範圍在500~570nm之間,摻雜材料係例如綠色、紅色、藍綠色或黃色摻雜材料等。 Next, refer to the fifth embodiment shown in FIG. In this embodiment, the second metal layer 3 includes a metal layer, a nano metal line layer, a high and low stepped metal layer or a combination thereof, and the organic material layer 4 includes a blue displacement light emitting layer 40a, a green light emitting layer 40b, and a doping material. And the dopant material may be present in either or both of the blue displacement light-emitting layer 40a or the green light-emitting layer 40b. The peak of the light-emitting spectrum of the green light-emitting layer 40b ranges from 500 to 570 nm, and the doping material is, for example, a green, red, cyan or yellow doping material.
於第5圖所示之第五實施例中,有機材料層4的藍位移發光層40a藉由第一金屬層5和第二金屬層3之間的表面電漿耦合而發出位移後的藍光,綠色發光層40b藉由第一金屬層5和第二金屬層3發出增益後的綠光,而摻雜材 料(例如紅色)發出紅光,則第五實施例之發光元件係發出白光。此外,可依白光需求選擇該摻雜材料。 In the fifth embodiment shown in FIG. 5, the blue displacement light-emitting layer 40a of the organic material layer 4 emits the shifted blue light by the surface plasma coupling between the first metal layer 5 and the second metal layer 3. The green light-emitting layer 40b emits green light by the first metal layer 5 and the second metal layer 3, and the dopant is doped. The material (for example, red) emits red light, and the light-emitting element of the fifth embodiment emits white light. In addition, the dopant material can be selected in accordance with white light requirements.
接著參閱第6圖所示之第六實施例,其與第5圖所示之發光元件的差異在於,藍位移發光層40a或綠色發光層40b皆不摻雜該摻雜材料,發光元件包括形成於電極層2和基板1外側的發光層40’,發光層40’摻雜有紅色、藍綠色或黃色等摻雜材料,發光層40’亦可為螢光粉結合軟性聚二甲基矽氧烷(PDMS)。第六實施例的發光元件係發出白光。 Referring to the sixth embodiment shown in FIG. 6, the difference from the light-emitting element shown in FIG. 5 is that neither the blue displacement light-emitting layer 40a nor the green light-emitting layer 40b is doped with the dopant material, and the light-emitting element includes the formation. In the electrode layer 2 and the light-emitting layer 40' outside the substrate 1, the light-emitting layer 40' is doped with a doping material such as red, cyan or yellow, and the light-emitting layer 40' may also be a fluorescent powder combined with a soft polydimethylsiloxane. Alkane (PDMS). The light-emitting element of the sixth embodiment emits white light.
接著參閱第7圖所示之第七實施例。於本實施例中,第二金屬層3包括一金屬部31及一開口部32,有機材料層4包括藍位移發光層40,且藍位移發光層40中摻雜有摻雜材料,例如紅色、藍綠色或黃色等摻雜材料。於第7圖所示之第七實施例中,對應第二金屬層3的金屬部31之有機材料層4發出位移後的藍光,而對應第二金屬層3的開口部32之有機材料層4發出增益後的綠光,且有機材料層4中的摻雜材料(例如紅色)可透過開口部32直接穿越,最後與位移後藍光混合形成白光。此外,可依白光需求選擇該摻雜材料。 Next, refer to the seventh embodiment shown in FIG. In this embodiment, the second metal layer 3 includes a metal portion 31 and an opening portion 32. The organic material layer 4 includes a blue displacement light emitting layer 40, and the blue displacement light emitting layer 40 is doped with a doping material, such as red. Doped material such as cyan or yellow. In the seventh embodiment shown in FIG. 7, the organic material layer 4 corresponding to the metal portion 31 of the second metal layer 3 emits the shifted blue light, and the organic material layer 4 corresponding to the opening portion 32 of the second metal layer 3 The green light after the gain is emitted, and the doping material (for example, red) in the organic material layer 4 can directly pass through the opening portion 32, and finally mixes with the displaced blue light to form white light. In addition, the dopant material can be selected in accordance with white light requirements.
接著參閱第8圖所示之第八實施例,其與第七實施例之差異在於,該摻雜材料係包含於形成於電極層2和基板1外側的發光層40’。第八實施例之發光元件係發出白光。 Next, referring to the eighth embodiment shown in Fig. 8, the difference from the seventh embodiment is that the doping material is included in the light-emitting layer 40' formed on the electrode layer 2 and the outside of the substrate 1. The light-emitting element of the eighth embodiment emits white light.
另外,於第七和八實施例中,電極層1和第一金屬層 5其中一者為陽極而另一者為陰極。 In addition, in the seventh and eighth embodiments, the electrode layer 1 and the first metal layer One of them is an anode and the other is a cathode.
根據第9圖說明本發明之第九實施例,本發明之發光元件包括依序堆疊之第一電極層21、第二金屬層3、含有藍位移發光層410的第一有機材料層41、含有第一金屬層5的載子產生層7、含有發光層420的第二有機材料層42、及第二電極層22。 According to a ninth embodiment of the present invention, a light-emitting element of the present invention includes a first electrode layer 21, a second metal layer 3, and a first organic material layer 41 containing a blue-shifted light-emitting layer 410, which are sequentially stacked. The carrier generation layer 7 of the first metal layer 5, the second organic material layer 42 including the light-emitting layer 420, and the second electrode layer 22.
於本實施例中,基板1設置於第一電極層21的外側,惟並不以此為限,其亦可設置於第二電極層22的外側,且基板1可例如透明基板。第一電極層21和第二電極層22其中一者為陽極,另一者為陰極,該陽極與該陰極中任一者或兩者皆為透明電極。 In this embodiment, the substrate 1 is disposed on the outer side of the first electrode layer 21, but not limited thereto, and may be disposed on the outer side of the second electrode layer 22, and the substrate 1 may be, for example, a transparent substrate. One of the first electrode layer 21 and the second electrode layer 22 is an anode, and the other is a cathode, and either or both of the anode and the cathode are transparent electrodes.
載子產生層7形成於第一電極層21和第二電極層22之間,載子產生層7可為金屬(如鋁)或者摻雜不同濃度或比例材料的金屬(如鋁),因而可視為包括第一金屬層5。第二金屬層3形成於第一電極層21與載子產生層7之間,於本實施例中。第二金屬層3包括金屬層、奈米金屬線層、高低階梯狀金屬層或其組合。 The carrier generation layer 7 is formed between the first electrode layer 21 and the second electrode layer 22, and the carrier generation layer 7 may be a metal (such as aluminum) or a metal (such as aluminum) doped with different concentrations or proportions of materials, thereby being visible To include the first metal layer 5. The second metal layer 3 is formed between the first electrode layer 21 and the carrier generation layer 7, in this embodiment. The second metal layer 3 includes a metal layer, a nanowire layer, a high and low stepped metal layer, or a combination thereof.
第一有機材料層41形成於第一金屬層5和第二金屬層3之間,包括藍位移發光層410,藍位移發光層410之一第一發光頻譜的波峰藉由第一金屬層5與第二金屬層3之間的表面電漿耦合而位移至一第二發光頻譜的波峰,該第一發光頻譜的波峰範圍為490nm~550nm,該第二發光頻譜的波峰小於510nm。第二有機材料層42形成於載子產生層7與第二電極層22之間,包括摻雜有第一摻雜材料和第二摻 雜材料之發光層420,其中,該第一摻雜材料可為波峰範圍在500~570nm之間的綠色發光材料,該第二有摻雜材料可包括例如紅色、藍綠色或黃色等摻雜材料。藉由第一金屬層5和第二金屬層3的表面電漿子耦合,第九實施例中的發光元件係發出白光。 The first organic material layer 41 is formed between the first metal layer 5 and the second metal layer 3, and includes a blue displacement light-emitting layer 410. The peak of the first light-emitting spectrum of one of the blue-shift light-emitting layers 410 is performed by the first metal layer 5 and The surface between the second metal layers 3 is coupled to the peak of a second luminescence spectrum, and the peak of the first luminescence spectrum ranges from 490 nm to 550 nm, and the peak of the second luminescence spectrum is less than 510 nm. The second organic material layer 42 is formed between the carrier generating layer 7 and the second electrode layer 22, including the first doping material and the second doping. a light-emitting layer 420 of a hetero-material, wherein the first dopant material may be a green light-emitting material having a peak range of 500 to 570 nm, and the second dopant material may include a dopant material such as red, cyan or yellow. . The light-emitting element in the ninth embodiment emits white light by surface plasmon coupling of the first metal layer 5 and the second metal layer 3.
接著參閱第10圖所示之第十實施例。於本實施例中,第二金屬層3為包括一金屬部31及一開口部32,第二金屬層3包括光柵狀金屬層、網格狀金屬層、或奈米線所組成的網格狀金屬層,以上第二金屬層3包括一金屬部31及一開口部32。藍位移發光層410之第一發光頻譜的波峰藉由第一金屬層5與金屬部31之間的表面電漿耦合而位移至第二發光頻譜的波峰,而第一金屬層5和開口部32之間不存在表面電漿耦合故第一發光頻譜的波峰不會改變。第二有機材料層42包括一摻雜有一摻雜材料之發光層420,該摻雜材料例如紅色、藍綠色或黃色等摻雜材料。藉此,第十實施例中的發光元件係發出白光。 Next, the tenth embodiment shown in Fig. 10 will be referred to. In this embodiment, the second metal layer 3 includes a metal portion 31 and an opening portion 32. The second metal layer 3 includes a grid-like metal layer, a mesh metal layer, or a grid of nanowires. The metal layer, the second metal layer 3 includes a metal portion 31 and an opening portion 32. The peak of the first light-emitting spectrum of the blue-shifted light-emitting layer 410 is displaced to the peak of the second light-emitting spectrum by the surface plasma coupling between the first metal layer 5 and the metal portion 31, and the first metal layer 5 and the opening portion 32 There is no surface plasma coupling between them, so the peak of the first luminescence spectrum does not change. The second organic material layer 42 includes a light-emitting layer 420 doped with a doping material such as a doping material such as red, cyan or yellow. Thereby, the light-emitting element in the tenth embodiment emits white light.
根據第11圖說明本發明之第十一實施例,本實施例的發光元件包括依序堆疊之電極層2、含有發光層410’的第一有機材料層41、含有第二金屬層3的載子產生層7、含有藍位移發光層420’的第二有機材料層42、及第一金屬層5。於本實施例中,基板1設置於電極層2的外側,惟並不以此為限,其亦可設置於第一金屬層5的外側,且基板1可例如透明基板。 According to an eleventh embodiment of the present invention, the light-emitting element of the present embodiment includes the electrode layer 2 stacked in sequence, the first organic material layer 41 including the light-emitting layer 410', and the second metal layer 3; The sub-generating layer 7, the second organic material layer 42 containing the blue-shifted light-emitting layer 420', and the first metal layer 5. In this embodiment, the substrate 1 is disposed on the outer side of the electrode layer 2, but not limited thereto, and may be disposed on the outer side of the first metal layer 5, and the substrate 1 may be, for example, a transparent substrate.
於本實施例中,電極層2為陽極,第一金屬層5為陰 極。載子產生層7形成於電極層2和第一金屬層5之間,載子產生層7可為金屬(如鋁)或者摻雜不同濃度或比例材料的金屬(如鋁),而可視為包括第二金屬層3。於本實施例中,第二金屬層3包括金屬層、奈米金屬線層、高低階梯狀金屬層或其組合。 In this embodiment, the electrode layer 2 is an anode, and the first metal layer 5 is a cathode. pole. The carrier generation layer 7 is formed between the electrode layer 2 and the first metal layer 5, and the carrier generation layer 7 may be a metal (such as aluminum) or a metal (such as aluminum) doped with different concentrations or proportions of materials, and may be included as Second metal layer 3. In the present embodiment, the second metal layer 3 includes a metal layer, a nanowire layer, a high and low stepped metal layer, or a combination thereof.
第一有機材料層41形成於載子產生層7與電極層2之間,包括摻雜有第一摻雜材料和第二摻雜材料之發光層410’,其中,第一摻雜材料可為綠色摻雜材料,第二摻雜材料例如紅色、藍綠色或黃色等摻雜材料。第二有機材料層42形成於第一金屬層5和第二金屬層3之間,包括藍位移發光層420’,藍位移發光層420’之一第一發光頻譜的波峰藉由第一金屬層5與第二金屬層3之間的表面電漿耦合而位移至一第二發光頻譜的波峰,該第一發光頻譜的波峰範圍為490nm~550nm,該第二發光頻譜的波峰小於510nm。藉由第一金屬層5和第二金屬層3的表面電漿子耦合,第十一實施例中的發光元件係發出白光。 The first organic material layer 41 is formed between the carrier generation layer 7 and the electrode layer 2, and includes a light-emitting layer 410' doped with a first dopant material and a second dopant material, wherein the first dopant material may be The green doping material, the second doping material is a doping material such as red, cyan or yellow. The second organic material layer 42 is formed between the first metal layer 5 and the second metal layer 3, and includes a blue displacement light-emitting layer 420'. The peak of the first light-emitting spectrum of one of the blue-shift light-emitting layers 420' is formed by the first metal layer. 5 is coupled to the surface of the second metal layer 3 to be displaced to a peak of a second illuminating spectrum. The peak of the first illuminating spectrum ranges from 490 nm to 550 nm, and the peak of the second illuminating spectrum is less than 510 nm. The light-emitting element in the eleventh embodiment emits white light by surface plasmon coupling of the first metal layer 5 and the second metal layer 3.
接著參閱第12圖所示之第十二實施例,其與第十一實施例的差異在於,第二金屬層3包括光柵狀金屬層、網格狀金屬層、或奈米線所組成的網格狀金屬層,以上第二金屬層3包括一金屬部31及一開口部32。藍位移發光層420’之第一發光頻譜的波峰藉由第一金屬層5與金屬部31之間的表面電漿耦合而位移至該第二發光頻譜的波峰,而第一金屬層5和開口部32之間不存在表面電漿耦合故第一發光頻譜的波峰不會改變。第一有機材料層41包括 一摻雜有摻雜材料之一發光層410’,該摻雜材料例如紅色、藍綠色或黃色等摻雜材料。藉此,第十二實施例中的發光元件係發出白光。 Referring to the twelfth embodiment shown in FIG. 12, the difference from the eleventh embodiment is that the second metal layer 3 comprises a grating metal layer, a mesh metal layer, or a network composed of nanowires. The second metal layer 3 includes a metal portion 31 and an opening portion 32. The peak of the first light-emitting spectrum of the blue-shifted light-emitting layer 420' is displaced to the peak of the second light-emitting spectrum by the surface plasma coupling between the first metal layer 5 and the metal portion 31, and the first metal layer 5 and the opening There is no surface plasma coupling between the portions 32 so that the peaks of the first luminescence spectrum do not change. The first organic material layer 41 includes A light-emitting layer 410' is doped with a doping material such as a doping material such as red, cyan or yellow. Thereby, the light-emitting element in the twelfth embodiment emits white light.
根據第13圖說明本發明之第十三實施例,其與第十一實施例的差異在於,電極層2和第一金屬層5為陽極,載子產生層7與第二金屬層3構成陰極。第一有機材料層41還包括一綠色發光層410a及摻雜有一摻雜材料之發光層410b,該摻雜材料例如紅色、黃色或其他等摻雜材料。第一有機材料層41中靠近電極層2的一側包括電洞注入/傳輸層(HIL/HTL)411,靠近第二金屬層3的一側包括電子注入/傳輸層(EIL/ETL)412;藍位移發光層420’靠近第一金屬層5的一側包括電洞注入/傳輸層(HIL/HTL)422,藍位移發光層420’靠近第二金屬層3的一側包括電子注入/傳輸層(EIL/ETL)421。 A thirteenth embodiment of the present invention will be described with reference to Fig. 13, which differs from the eleventh embodiment in that the electrode layer 2 and the first metal layer 5 are anodes, and the carrier generation layer 7 and the second metal layer 3 constitute a cathode. . The first organic material layer 41 further includes a green light emitting layer 410a and a light emitting layer 410b doped with a doping material such as red, yellow or other doping materials. a side of the first organic material layer 41 adjacent to the electrode layer 2 includes a hole injection/transport layer (HIL/HTL) 411, and a side close to the second metal layer 3 includes an electron injection/transport layer (EIL/ETL) 412; The side of the blue displacement light-emitting layer 420' adjacent to the first metal layer 5 includes a hole injection/transport layer (HIL/HTL) 422, and the side of the blue displacement light-emitting layer 420' adjacent to the second metal layer 3 includes an electron injection/transport layer. (EIL/ETL) 421.
於本發明中,於第一金屬層和第二金屬層中間夾著有機材料層(或第一有機材料層、第二有機材料層,以下以有機材料層概稱之),藉此形成MDM結構,即金屬/介電質/金屬結構,當有機材料層具有一特定厚度時,可使第一金屬層和第二金屬層皆產生表面電漿(surface plasmon),而處於第一金屬層和第二金屬層上的表面電漿會相互耦合以產生強電場,如第14圖所示,此強電場會影響有機材料層中電子躍遷機率,進而影響其發光增益和波長位移現象。於第14圖中,當第二金屬層的厚度為15nm、第一金屬層厚度為100nm、而有機材料層的厚度為90nm時,強電場落在 有機材料層之處,相較於沒有MDM結構的弱電場落於有機材料層之處,本發明能使得有機材料層的發光波長位移,使藍位移發光層發出藍位移之後的藍光。 In the present invention, an organic material layer (or a first organic material layer, a second organic material layer, hereinafter referred to as an organic material layer) is interposed between the first metal layer and the second metal layer, thereby forming an MDM structure. a metal/dielectric/metal structure. When the organic material layer has a specific thickness, the first metal layer and the second metal layer can be surface plasmon, and the first metal layer and the first metal layer The surface plasma on the two metal layers will couple with each other to generate a strong electric field. As shown in Fig. 14, this strong electric field affects the probability of electron transition in the organic material layer, thereby affecting its luminous gain and wavelength shift phenomenon. In FIG. 14, when the thickness of the second metal layer is 15 nm, the thickness of the first metal layer is 100 nm, and the thickness of the organic material layer is 90 nm, a strong electric field falls. Where the organic material layer is located at the organic material layer compared to the weak electric field without the MDM structure, the present invention can shift the emission wavelength of the organic material layer, so that the blue displacement light-emitting layer emits blue light after the blue displacement.
接著參閱下表一,此為模擬結果,發光元件的模擬條件為選擇一有機材料層之發光頻譜波峰為530nm,固定第一金屬層膜厚為100nm,改變第二金屬層的厚度(以D2表示)與有機材料層的厚度(以D1表示),並做出不同厚度的組合,第二金屬層與有機材料層的厚度關係如表一所示,第二金屬層的厚度D2和有機材料層的厚度D1改變時,發光頻譜的波峰為530nm之發光元件可依不同的厚度變化發出不同的光波長範圍。 Referring to Table 1 below, this is the simulation result. The simulation condition of the illuminating element is that the illuminating spectrum peak of an organic material layer is selected to be 530 nm, the film thickness of the fixed first metal layer is 100 nm, and the thickness of the second metal layer is changed (by D 2 Representing) the thickness of the organic material layer (indicated by D 1 ) and making a combination of different thicknesses, the thickness relationship between the second metal layer and the organic material layer is as shown in Table 1, the thickness of the second metal layer D 2 and the organic When the thickness D 1 of the material layer is changed, the light-emitting elements having a peak of the light-emitting spectrum of 530 nm can emit different light wavelength ranges according to different thickness variations.
根據表一,所發出的光波長波峰包括470nm、508nm、474nm、484nm、487nm、492nm、506nm、508nm(如表一粗框所示)為藍位移藍光波段,而光波長波峰在530nm、527nm、548nm、534nm、529nm(如表一虛線框所示)為綠光光增益範圍。另外,依模擬後結果,如第15和16圖顯示,隨著有機材料層的厚度D1和第二金屬層D2的厚度不同,發光元件所產生的光的藍位移現象和光強度。藉此,可知當有機材料層D1厚度約80nm~130nm時,特定波長反射率降到越低,代表入射光能量轉移至表面電漿的比例越高,則發光元件的發光強度越高。 According to Table 1, the wavelength peaks of the emitted light include 470 nm, 508 nm, 474 nm, 484 nm, 487 nm, 492 nm, 506 nm, 508 nm (as shown in the thick box of Table 1), which are blue-shifted blue light bands, and the wavelength peaks of light are at 530 nm and 527 nm. 548 nm, 534 nm, 529 nm (as indicated by the dashed box in Table 1) is the green light gain range. Further, according to the results of the simulation, as shown in Figs. 15 and 16, the blue displacement phenomenon and the light intensity of the light generated by the light-emitting element vary depending on the thickness D 1 of the organic material layer and the thickness of the second metal layer D 2 . Thereby, it is understood that when the thickness of the organic material layer D 1 is about 80 nm to 130 nm, the specific wavelength reflectance is lowered to a lower level, and the higher the ratio of the incident light energy to the surface plasma is, the higher the light-emitting intensity of the light-emitting element is.
第17圖顯示,模擬條件所使用之有機材料層原本發出波長約530nm的綠光,經本發明之發光元件之第一金屬層和第二金屬層間的表面電漿耦合而藍位移之後,發出波長約480nm的藍光。藍位移發光層的材料例如螢光材料Thermally Activated Delayed Fluorescence(TADF),磷光材料24FTir(acac)(bis[2-(4′,6′-difluorophenyl)-5-trimethylsilylpyridinato-N,C2′]iridium(III)acetylacetonate)以及磷光材料Ir(ppy)3(Tris[2-phenylpyridinato-C2,N]iridium(III)),皆可產生藍位移藍光,但並不以此為限,例如,Ir(ppy)3材料產生之藍位移後藍光的發光效率可達13cd/A,大於藍色螢光材料的9.9cd/A,顯示本發明之藍位移發光層確實可取代藍色螢光材料,同時藉由綠色發光層的長壽命,提昇發 光元件整體的發光效率。另外根據第17圖,位移後的波峰範圍仍位於原發光頻譜的範圍中,由此可知,第一金屬層和第二金屬層間的有機材料層原本發出的光波長範圍包括藍光(波長約450~490nm)的部份,則經過波長位移後即可發出藍光。 Figure 17 shows that the organic material layer used in the simulation condition originally emits green light having a wavelength of about 530 nm, and after being blue-shifted by the surface plasma coupling between the first metal layer and the second metal layer of the light-emitting element of the present invention, the wavelength is emitted. 480nm blue light. The material of the blue displacement luminescent layer is, for example, the fluorescently activated material Delayed Fluorescence (TADF), the phosphorescent material 24FTir(acac)(bis[2-(4',6'-difluorophenyl)-5-trimethylsilylpyridinato-N, C2']iridium ( III) acetylacetonate) and the phosphorescent material Ir(ppy) 3 (Tris[2-phenylpyridinato-C2,N]iridium(III)) can produce blue shift blue light, but not limited thereto, for example, Ir(ppy) 3 The blue light emission efficiency of the blue shift of the material can reach 13 cd/A, which is larger than 9.9 cd/A of the blue fluorescent material, indicating that the blue displacement luminescent layer of the present invention can replace the blue fluorescent material while using green The long life of the light-emitting layer enhances the luminous efficiency of the entire light-emitting element. In addition, according to FIG. 17, the range of the peak after displacement is still in the range of the original illuminating spectrum, and it can be seen that the wavelength range of the light originally emitted by the organic material layer between the first metal layer and the second metal layer includes blue light (wavelength is about 450~). The portion of 490 nm) emits blue light after wavelength shift.
另外,本發明之發光元件再配合摻雜綠色和紅色等摻雜材料即可發出白光,第18圖示意本發明發光元件的白光頻譜(以粗線顯示),相較於一般高演色(CRI>90)元件的白光(以細線顯示),可發現本發明之發光元件的頻譜與高演色元件的頻譜相當接近,圖中圈起部分即為所發出之位移後藍光。 In addition, the light-emitting element of the present invention can be combined with doping materials such as green and red to emit white light, and FIG. 18 is a view showing the white light spectrum (shown by thick lines) of the light-emitting element of the present invention, compared with the general high color rendering (CRI). >90) White light of the element (shown by thin lines), it can be found that the spectrum of the light-emitting element of the present invention is quite close to the spectrum of the high-color element, and the circled portion in the figure is the blue light after the displacement.
綜上所述,本發明之發光元件無須採用藍色發光材料,而是在第一金屬層和第二金屬層之間形成一包括藍位移發光層之有機材料層,藉由第一金屬層和第二金屬層間的表面電漿耦合,使藍位移發光層之第一發光頻譜的波峰範圍(約490nm~550nm)位移至第二發光頻譜的波峰範圍(小於510nm),且第二發光頻譜的波峰範圍小於第一發光頻譜的波峰範圍,藉此發出位移後的藍光,另外配合綠色或紅色等其他摻雜材料,以混合出白光,故本發明之發光元件具有壽命長、發光效率高之功效。 In summary, the light-emitting element of the present invention does not need to use a blue light-emitting material, but forms an organic material layer including a blue-shifted light-emitting layer between the first metal layer and the second metal layer, by using the first metal layer and The surface plasma coupling between the second metal layers causes the peak range of the first luminescence spectrum of the blue displacement luminescent layer (about 490 nm to 550 nm) to be displaced to the peak range of the second luminescence spectrum (less than 510 nm), and the peak of the second luminescence spectrum The light-emitting element of the present invention has a long life and high luminous efficiency, because the range is smaller than the peak range of the first light-emitting spectrum, thereby emitting the shifted blue light, and mixing other white doping materials such as green or red.
上述實施樣態僅例示性說明本發明之功效,而非用於限制本發明,任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述該些實施態樣進行修飾與改變。此外,在上述該些實施態樣中之結構的數目僅為例示 性說明,亦非用於限制本發明。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-described embodiments are merely illustrative of the effects of the present invention, and are not intended to limit the present invention, and those skilled in the art can modify the above-described embodiments without departing from the spirit and scope of the present invention. And change. Moreover, the number of structures in the above embodiments is merely an illustration. The description is not intended to limit the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.
1‧‧‧基板 1‧‧‧Substrate
2‧‧‧電極層 2‧‧‧electrode layer
3‧‧‧第二金屬層 3‧‧‧Second metal layer
4‧‧‧有機材料層 4‧‧‧Organic material layer
40‧‧‧藍位移發光層 40‧‧‧Blue displacement luminescent layer
5‧‧‧第一金屬層 5‧‧‧First metal layer
D1、D2‧‧‧厚度 D 1 , D 2 ‧‧‧ thickness
D3‧‧‧距離 D 3 ‧‧‧Distance
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CN201410733624.4A CN104851981B (en) | 2014-02-18 | 2014-12-04 | Blue light emitting element and light emitting element |
US14/625,355 US9331302B2 (en) | 2014-02-18 | 2015-02-18 | Blue light emitting device and light emitting device |
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US201461941319P | 2014-02-18 | 2014-02-18 |
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TWI573493B (en) * | 2016-02-19 | 2017-03-01 | 財團法人工業技術研究院 | Light emitting element |
US9704924B2 (en) | 2015-01-26 | 2017-07-11 | Industrial Technology Research Institute | Light emitting device |
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TW555831B (en) * | 2001-02-16 | 2003-10-01 | Ind Tech Res Inst | Electroluminance device |
KR100454750B1 (en) * | 2002-06-20 | 2004-11-03 | 삼성에스디아이 주식회사 | Blue light-emitting compound for organic electroluminescent device and organic electroluminescent device using the same |
US6670772B1 (en) * | 2002-06-27 | 2003-12-30 | Eastman Kodak Company | Organic light emitting diode display with surface plasmon outcoupling |
JP2011165653A (en) * | 2010-01-14 | 2011-08-25 | Canon Inc | Organic el element, and light-emitting apparatus using the same |
US8269214B2 (en) * | 2010-07-29 | 2012-09-18 | General Electric Company | Organic light emitting device with outcoupling layer for improved light extraction |
TW201245405A (en) * | 2011-03-08 | 2012-11-16 | Du Pont | Organic electronic device for lighting |
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US9704924B2 (en) | 2015-01-26 | 2017-07-11 | Industrial Technology Research Institute | Light emitting device |
TWI573493B (en) * | 2016-02-19 | 2017-03-01 | 財團法人工業技術研究院 | Light emitting element |
US9741959B1 (en) | 2016-02-19 | 2017-08-22 | Industrial Technology Research Institute | Light emitting device |
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