TW201520539A - Apparatus and method for processing a large area substrate - Google Patents
Apparatus and method for processing a large area substrate Download PDFInfo
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- TW201520539A TW201520539A TW103125047A TW103125047A TW201520539A TW 201520539 A TW201520539 A TW 201520539A TW 103125047 A TW103125047 A TW 103125047A TW 103125047 A TW103125047 A TW 103125047A TW 201520539 A TW201520539 A TW 201520539A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
- G01N21/474—Details of optical heads therefor, e.g. using optical fibres
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
- G01N21/892—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the flaw, defect or object feature examined
- G01N21/896—Optical defects in or on transparent materials, e.g. distortion, surface flaws in conveyed flat sheet or rod
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/958—Inspecting transparent materials or objects, e.g. windscreens
Abstract
Description
本揭露之實施例是有關於處理系統與用於操作其之方法。特別是，它們係有關於用於處理及監控大面積基板之設備與藉由光學手段來用於量測大面積基板之性質的方法。本揭露特別是有關於串聯式(in-line)處理設備。本揭露之設備特別是適用於處理及量測垂直配置之大面積基板。 Embodiments of the present disclosure are directed to a processing system and a method for operating the same. In particular, they are related to devices for processing and monitoring large-area substrates and methods for measuring the properties of large-area substrates by optical means. The present disclosure relates in particular to in-line processing equipment. The apparatus of the present disclosure is particularly suitable for processing and measuring large area substrates in vertical configurations.
於數種技術應用中，不同材料之數層係在基板上沉積於彼此上。一般來說，此係藉由一連串之塗佈或沉積步驟完成，例如是濺鍍步驟。舉例來說，可沉積具有一連串之「材料一」-「材料二」-「材料一」之數層堆疊。為了沉積數層堆疊，可使用數個沉積模組的串聯式配置。典型之串聯式系統包括數個接續的處理模組，其中數個處理步驟係在一個接著一個的腔體內進行，使得數個基板可以串聯式系統連續地或類似連續地進行處理。藉由變化製程參數，可取得塗佈的不同物理性質，製程參數例如是沉積率、基板通過數個沉積模組之傳輸速度或其他製程參數，不同物理性質例如是不同光學折射性質。 In several technical applications, several layers of different materials are deposited on each other on a substrate. Generally, this is accomplished by a series of coating or deposition steps, such as a sputtering step. For example, a stack of layers of "Material One" - "Material Two" - "Material One" can be deposited. In order to deposit several layers of stacks, a series configuration of several deposition modules can be used. A typical tandem system includes a plurality of successive processing modules, with a plurality of processing steps being performed in one cavity after another such that a plurality of substrates can be processed continuously or similarly in series. The different physical properties of the coating can be obtained by varying the process parameters, such as the deposition rate, the transmission speed of the substrate through several deposition modules, or other process parameters, such as different optical refractive properties.
處理大面積基板需要進行製程監控及品質檢測，以確保已處理之大面積基板的高品質及可再現品質。舉例來說，對於大面積基板上之塗佈之品質檢測而言，需以低持有成本(cost of ownership)來確定已塗佈之基板的光學性質。通常由於經濟及節省空間之議題，大面積基板係在垂直配置狀態中進行處理。與量測垂直配置之大面積基板之性質相關的問題係大面積基板因重力作用於基板上而容易翹曲(wrap)。既然基板與量測裝置之相對位置可能因位置及翹曲程度改變，基板之此種翹曲可能導致光學量測不精確。 Processing large-area substrates requires process monitoring and quality inspection to ensure high quality and reproducible quality of processed large-area substrates. For example, for quality inspection of coatings on large area substrates, the optical properties of the coated substrate need to be determined at a low cost of ownership. Large-area substrates are typically processed in a vertical configuration due to economic and space-saving issues. A problem associated with measuring the properties of a large-area substrate that is vertically disposed is that a large-area substrate is easily wobbled by gravity acting on the substrate. Since the relative position of the substrate and the measuring device may vary due to position and warpage, such warpage of the substrate may result in inaccurate optical measurements.
因此，對於改善之基板處理系統的需求係持續存在，此改善之基板處理系統可達到對大面積基板有改善之精準品質檢測。因此，對於量測基板之性質的改善之方法係有需求的，特別是適用於具有高輸出能力之處理系統。 As a result, the need for improved substrate processing systems continues to exist, and the improved substrate processing system achieves accurate quality inspections that improve on large area substrates. Therefore, there is a need for an improved method of measuring the properties of a substrate, particularly for a processing system having high output capability.
有鑑於上述，本揭露係提供一種設備，用於處理大面積基板而克服此領域中之至少一些問題。根據獨立申請專利範圍，藉由一設備及一方法係至少某些程度達成目的，此設備用於處理大面積基板，此方法用於量測實質上垂直配置之大面積基板之至少一光學性質。本揭露之其他方面、優點、及特性係藉由附屬申請專利範圍、說明書、及所附圖式而更加清楚。 In view of the above, the present disclosure provides an apparatus for processing large area substrates to overcome at least some of the problems in the art. According to the scope of the independent patent application, the apparatus is for processing a large-area substrate by at least some extent by means of a device and a method for measuring at least one optical property of a substantially large-area substrate of a substantially vertical configuration. Other aspects, advantages, and features of the present disclosure will become apparent from the appended claims.
有鑑於上述，一種用於處理一大面積基板之設備係提供。用於處理大面積基板之設備包括一腔體配置，用於以一實 質上垂直配置狀態傳輸大面積基板於其中通過。腔體配置包括至少一腔體、一處理裝置及一出口埠，處理裝置用以處理垂直配置之大面積基板，出口埠用於垂直配置之大面積基板。再者，用於處理大面積基板之設備包括一傳輸系統，用於傳輸實質上垂直配置之大面積基板通過腔體配置；以及一量測配置，包括至少一光學量測裝置，其中該至少一光學量測裝置包括一發光裝置及一第一光偵測裝置，發光裝置用以發出漫射光至垂直配置之大面積基板上，且第一光偵測裝置用以量測垂直配置之大面積基板之至少一光學性質。 In view of the above, an apparatus for processing a large area of a substrate is provided. The device for processing a large area substrate includes a cavity configuration for The qualitatively vertical configuration state transmits a large area substrate through it. The cavity arrangement includes at least one cavity, a processing device and an outlet port, the processing device is for processing a vertically disposed large-area substrate, and the outlet port is for a vertically disposed large-area substrate. Furthermore, the apparatus for processing a large-area substrate includes a transmission system for transmitting a large-area substrate through a cavity configuration in a substantially vertical configuration; and a measurement configuration including at least one optical measurement device, wherein the at least one The optical measuring device comprises a light emitting device and a first light detecting device, wherein the light emitting device emits diffused light onto the vertically arranged large-area substrate, and the first light detecting device is configured to measure the vertically arranged large-area substrate At least one optical property.
根據本揭露之一方面，一種用以處理一大面積基板之設備可以此處所述之量測配置進行改良。一種用以改良一設備之方法係揭露，此設備係用以處理一大面積基板。此方法包括提供一種用於處理一大面積基板之設備，此設備具有此處所述之量測配置。 In accordance with one aspect of the present disclosure, an apparatus for processing a large area of substrate can be modified in the measurement configuration described herein. A method for modifying a device is disclosed for processing a large area of substrate. The method includes providing a device for processing a large area substrate having the measurement configuration described herein.
根據本揭露之另一方面，一種用於量測一實質上垂直配置之大面積基板之至少一光學性質之方法係提供，其中此方法包括：相對於一量測配置於一傳輸方向中傳輸實質上垂直配置之大面積基板；以漫射光照亮實質上垂直配置之大面積基板；量測實質上垂直配置之大面積基板之該至少一光學性質。 In accordance with another aspect of the present disclosure, a method for measuring at least one optical property of a substantially vertical configuration of a substantially large area substrate is provided, wherein the method includes: transmitting substantially in a transmission direction relative to a measurement configuration a large-area substrate disposed vertically; illuminating a substantially large-area substrate disposed substantially vertically with diffused light; and measuring the at least one optical property of the substantially-area substrate substantially vertically disposed.
本揭露亦有關於用於執行所揭露之方法的一設備，且此設備包括用於執行各所說明之方法步驟的設備元件。此些方法步驟可藉由硬體元件、透過適當軟體程式化之電腦、藉由此二 者之任何結合或以任何其他方式來執行。再者，本揭露亦有關於藉由所述之設備進行操作之方法。它包括用於執行此設備之每個功能的方法步驟。 The disclosure also relates to a device for performing the disclosed method, and the device includes device elements for performing the various described method steps. These method steps can be performed by a hardware component, a computer programmed by a suitable software, and thereby Any combination or execution in any other way. Furthermore, the present disclosure also relates to methods of operation by the apparatus described. It includes method steps for performing each function of this device.
本揭露之其他方面、優點、及特性係藉由附屬申請專利範圍、說明書、及所附圖式而更加清楚。為了對本發明之上述及其他方面有更佳的瞭解，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下： Other aspects, advantages, and features of the present disclosure will become apparent from the appended claims. In order to better understand the above and other aspects of the present invention, the preferred embodiments are described below, and in conjunction with the drawings, the detailed description is as follows:
100‧‧‧設備 100‧‧‧ Equipment
110‧‧‧腔體配置 110‧‧‧ cavity configuration
112‧‧‧出口埠 112‧‧‧Export
120‧‧‧大面積基板 120‧‧‧ Large area substrate
121‧‧‧第一表面 121‧‧‧ first surface
122‧‧‧第二表面 122‧‧‧ second surface
131‧‧‧傳輸載件 131‧‧‧Transport carrier
132‧‧‧底框架 132‧‧‧ bottom frame
133‧‧‧次框架 133‧‧‧ frames
200‧‧‧量測配置 200‧‧‧Measurement configuration
210‧‧‧光學量測裝置 210‧‧‧Optical measuring device
211‧‧‧發光裝置 211‧‧‧Lighting device
212‧‧‧第一光偵測裝置 212‧‧‧First light detecting device
213‧‧‧積分球 213‧‧Scores
214‧‧‧光源 214‧‧‧Light source
215‧‧‧第二光偵測裝置 215‧‧‧Second light detecting device
216‧‧‧光出口埠 216‧‧‧Light exit埠
217‧‧‧量測軸 217‧‧‧ Measuring axis
218‧‧‧偵測方向 218‧‧‧Detection direction
220‧‧‧光擋 220‧‧‧Light block
221‧‧‧吸收區 221‧‧‧Absorption zone
222‧‧‧線 222‧‧‧ line
230‧‧‧處理裝置 230‧‧‧Processing device
301、302、303‧‧‧流程步驟 301, 302, 303‧‧‧ process steps
D1、D2、D3、△D‧‧‧距離 D1, D2, D3, △D‧‧‧ distance
P‧‧‧原點 P‧‧‧ origin
α、β、δ、△β‧‧‧角度 α, β, δ, △β‧‧‧ angle
為了可詳細地了解本揭露上述之特點，簡要摘錄於上之本揭露更特有的說明可參照實施例。所附之圖式係有關於本揭露之實施例，且係說明於下方。數個典型之實施例係繪示於圖式中，且於隨後之說明書中詳細地說明。於圖式中：第1圖繪示根據此處所述實施例之用於處理大面積基板之設備的透視圖；第2圖繪示用於基板之傳輸載件的一實施例的示意圖，傳輸載件可使用在根據此處所述實施例之用於處理大面積基板之設備的實施例中；第3圖繪示用於基板之傳輸載件的其他實施例的示意圖，傳輸載件可使用在根據此處所述實施例之用於處理大面積基板之設備的實施例中；第4圖繪示光學量測裝置之一實施例的剖面圖，光學量測裝置係使用在根據此處所述實施例之用於處理大面積基板之設備的實施例中； 第5圖繪示根據第4圖之光學量測裝置之一實施例的剖面圖，其中相較於在第4圖中之基板與光學量測裝置之相對位置，與光學量測裝置相關之基板之相對位置係橫向地移動；第6圖繪示根據第4圖之光學量測裝置之一實施例的剖面圖，其中相較於第4圖中之基板的方向，基板之方向係傾斜；第7圖繪示光學量測裝置之一實施例的剖面圖，光學量測裝置係使用在根據此處所述實施例之用於處理大面積基板之設備的實施例中；第8圖繪示包括光擋(light trap)及光學量測裝置之量測配置之一實施例的剖面圖，光擋及光學量測裝置係使用在根據此處所述實施例之用於處理大面積基板之設備的實施例中；第9圖繪示根據此處所述實施例之用於處理大面積基板之設備的透視圖；以及第10圖繪示根據此處所述實施例之用於量測實質上垂直配置之大面積基板的至少一光學性質的方法之實施例。 In order to understand the features of the present disclosure in detail, a more detailed description of the present disclosure may be referred to the embodiments. The accompanying drawings are directed to the embodiments of the disclosure and are described below. A few exemplary embodiments are shown in the drawings and are described in detail in the following description. In the drawings: FIG. 1 is a perspective view of an apparatus for processing a large-area substrate according to embodiments described herein; and FIG. 2 is a schematic view showing an embodiment of a transport carrier for a substrate, which is transmitted The carrier can be used in embodiments of the apparatus for processing large area substrates in accordance with embodiments described herein; FIG. 3 is a schematic diagram of another embodiment of a transport carrier for a substrate, the transport carrier can be used In an embodiment of an apparatus for processing a large area substrate according to embodiments described herein; FIG. 4 is a cross-sectional view showing an embodiment of an optical measuring apparatus used in accordance with In an embodiment of the apparatus for processing a large area substrate of the embodiment; 5 is a cross-sectional view showing an embodiment of an optical measuring device according to FIG. 4, wherein the substrate associated with the optical measuring device is compared with the relative position of the substrate and the optical measuring device in FIG. The relative position is shifted laterally; FIG. 6 is a cross-sectional view showing an embodiment of the optical measuring device according to FIG. 4, wherein the direction of the substrate is inclined compared to the direction of the substrate in FIG. 4; 7 is a cross-sectional view showing an embodiment of an optical measuring device used in an embodiment of an apparatus for processing a large-area substrate according to embodiments described herein; FIG. 8 is a view including A cross-sectional view of one embodiment of a light trap and optical measurement device, the optical block and optical measuring device used in an apparatus for processing a large area substrate in accordance with embodiments described herein. In the embodiment; FIG. 9 is a perspective view of an apparatus for processing a large-area substrate according to embodiments described herein; and FIG. 10 is a diagram showing substantially vertical measurement according to embodiments described herein Configuring at least one optical property of the large area substrate Example Law.
詳細的參照將以各種實施例來達成，實施例的一或多個例子係繪示在各圖式中。各例子係藉由說明的方式提供且不意味為一限制。舉例來說，所說明或敘述而做為一實施例之部分之特性可用於任何其他實施例或與任何其他實施例結合，以取得再其他實施例。此意指本揭露包括此些調整及變化。 The detailed description is to be considered in terms of various embodiments, and one or more examples of the embodiments are illustrated in the drawings. The examples are provided by way of illustration and are not meant as a limitation. For example, the features illustrated or described as part of one embodiment can be used in any other embodiment or in combination with any other embodiment to achieve yet other embodiments. This means that the disclosure includes such adjustments and variations.
在下述圖式的說明中，相同之參考編號係意指相同或相似的元件。一般來說，僅有關於各別實施例之不同處會進行 說明。除非特定之例外，於一實施例中之一部分或方面的說明係亦應用於另一實施例中之對應部分或方面。 In the description of the following figures, the same reference numerals are used to refer to the same or similar elements. In general, only the differences between the various embodiments will be Description. Unless specifically exemplified, a portion or aspect of an embodiment is also applied to a corresponding portion or aspect of another embodiment.
此處所使用之名稱「基板」應包含數個通常用於顯示器製造的基板，例如是玻璃或塑膠基板。舉例來說，如此處所述之基板應包括數個通常用於液晶顯示器(Liquid Crystal Display，LCD)、電漿顯示面板(Plasma Display Panel，PDP)、及類似之設備的基板。除非於說明中明確提及之特別的例外，名稱「基板」係理解為此處所指定之「大面積基板」。根據本揭露，大面積基板可具有至少0.174m2之尺寸。尺寸可特別為約1.4m2至約8m2，更特別為約2m2至約9m2，或甚至高達12m2。 The name "substrate" as used herein shall include a plurality of substrates commonly used in the manufacture of displays, such as glass or plastic substrates. For example, a substrate as described herein should include a number of substrates commonly used in liquid crystal displays (LCDs), plasma display panels (PDPs), and the like. Unless otherwise stated in the specification, the term "substrate" is understood to mean the "large area substrate" as specified herein. According to the present disclosure, the large area substrate may have a size of at least 0.174 m 2 . The size may in particular be from about 1.4 m 2 to about 8 m 2 , more particularly from about 2 m 2 to about 9 m 2 , or even up to 12 m 2 .
根據本揭露，提供至根據此處所述實施例之設備、設備之腔體及方法之基板係如此處所述為大面積基板或具有大面積基板之尺寸或用於大面積基板的傳輸載件。舉例來說，具有對應於為大面積基板之單一基板的尺寸的載件可為第4.5代、第5代、第7.5代、第8.5代、或甚至第10代，第4.5代對應於約0.67m2之基板(730 x 920mm)、第5代對應於約1.4m2之基板(1.1m x 1.3m)、第7.5代對應於約4.29m2之基板(1.95m x 2.2m)、第8.5代對應於約5.7m2之基板(2.2m x 2.5m)、第10代對應於約8.7m2之基板(2.85m×3.05m)。甚至例如是第11代及第12代之更高代與對應之基板面積可以類似的方式應用。然而，此一尺寸之各別載件可亦用於支撐數個基板。 According to the present disclosure, a substrate provided to a device, a device cavity, and a method according to embodiments described herein is a large-area substrate or a transfer carrier having a large-area substrate or a large-area substrate, as described herein. . For example, a carrier having a size corresponding to a single substrate that is a large-area substrate may be the 4.5th, 5th, 7.5th, 8.5th, or even the 10th generation, and the 4.5th generation corresponds to about 0.67. The substrate of m 2 (730 x 920 mm), the fifth generation corresponds to a substrate of about 1.4 m 2 (1.1 mx 1.3 m), the 7.5th generation corresponds to a substrate of about 4.29 m 2 (1.95 mx 2.2 m), and the 8.5th generation corresponds. the substrate 2 at about 5.7m (2.2mx 2.5m), the first passage 10 corresponds to the substrate of about 8.7m 2 (2.85m × 3.05m). Even higher generations such as the 11th and 12th generations can be applied in a similar manner to the corresponding substrate area. However, individual carriers of this size can also be used to support several substrates.
根據此處所述實施例，基板係為本質上垂直方向。 藉此，可理解的是，垂直方向之基板可在處理系統中自一垂直方向偏移一些，垂直方向也就是90°，以允許在例如是15°或更少之一些角度傾斜時穩定傳輸。 According to embodiments described herein, the substrate is in a substantially vertical direction. By this, it will be appreciated that the substrate in the vertical direction can be offset from a vertical direction in the processing system by a vertical direction of 90[deg.] to allow for stable transmission when tilted at some angle, for example 15[deg.] or less.
如第1圖中所示，根據此處所述實施例之用於處理大面積基板120之設備100包括腔體配置110，用於以垂直配置狀態傳輸大面積基板120於其中通過，其中腔體配置110包括至少一腔體、處理裝置(未繪示)及出口埠112，處理裝置用於處理垂直配置之大面積基板120，出口埠112用於垂直配置之大面積基板120。再者，根據此處所述實施例，用於處理大面積基板120之設備100包括傳輸系統(未繪示)及量測配置200。傳輸系統用於傳輸垂直配置之大面積基板120通過腔體配置110，量測配置200包括至少一光學量測裝置210。根據此處所述實施例，該至少一光學量測裝置210包括發光裝置211及第一光偵測裝置212，發光裝置211用於發出漫射光至垂直配置之大面積基板120上，第一光偵測裝置212用於量測垂直配置之大面積基板的至少一光學性質。 As shown in FIG. 1, an apparatus 100 for processing a large area substrate 120 in accordance with embodiments described herein includes a cavity configuration 110 for transporting a large area substrate 120 therethrough in a vertically disposed state, wherein the cavity The arrangement 110 includes at least one cavity, processing means (not shown) and an exit port 112 for processing the vertically disposed large area substrate 120, and the exit port 112 for the vertically disposed large area substrate 120. Moreover, in accordance with embodiments described herein, apparatus 100 for processing large area substrate 120 includes a transmission system (not shown) and measurement configuration 200. The transport system is used to transport the vertically disposed large area substrate 120 through the cavity configuration 110, and the measurement arrangement 200 includes at least one optical metrology device 210. According to the embodiment described herein, the at least one optical measuring device 210 includes a light emitting device 211 and a first light detecting device 212, and the light emitting device 211 is configured to emit diffused light onto the vertically disposed large-area substrate 120, the first light. The detecting device 212 is configured to measure at least one optical property of the vertically disposed large area substrate.
第4圖繪示用於此處所述設備的實施例中之光學量測裝置210之一實施例的剖面圖。如第4圖中範例性所示，該至少一光學量測裝置210之發光裝置211包括積分球213及光源214，光源214發出光至積分球213中。根據可與此處所述其他實施例結合之數個實施例，光源係配置而用於發光，光在380-780nm之可見輻射範圍中及/或780nm至3000nm之紅外線輻射之範 圍中及/或200nm至380nm之紫外線輻射之範圍中。 4 is a cross-sectional view of one embodiment of an optical metrology device 210 used in an embodiment of the apparatus described herein. As exemplarily shown in FIG. 4, the light-emitting device 211 of the at least one optical measuring device 210 includes an integrating sphere 213 and a light source 214, and the light source 214 emits light into the integrating sphere 213. According to several embodiments, which can be combined with other embodiments described herein, the light source is configured for illumination, and the light is in the visible radiation range of 380-780 nm and/or the infrared radiation of 780 nm to 3000 nm. Within the range of and/or from 200 nm to 380 nm of ultraviolet radiation.
根據可與此處所述其他實施例結合之數個實施例，發光裝置211之光源214係配置，使得光可發出至積分球213中。光源可配置於積分球213中，或貼附於積分球213之內牆。根據數個實施例，光源214可配置於積分球外，其中積分球之牆包括一開口，此開口係配置，使得自光源發出之光可照射到積分球之內部中。 According to several embodiments, which can be combined with other embodiments described herein, the light source 214 of the illumination device 211 is configured such that light can be emitted into the integrating sphere 213. The light source may be disposed in the integrating sphere 213 or attached to the inner wall of the integrating sphere 213. According to several embodiments, the light source 214 can be disposed outside the integrating sphere, wherein the wall of the integrating sphere includes an opening configured such that light from the source can illuminate the interior of the integrating sphere.
根據可與此處所述其他實施例結合之數個實施例，光源214可配置成例如是白熾燈泡(filament bulb)、鹵鎢燈泡(tungsten halogen bulb)、發光二極體(LEDs)、高功率LEDs或氙弧燈(Xe-Arc-Lamps)。光源214可配置，使得光源可短時間的開啟與關閉。為了切換，光源可連接於控制單元(未繪示)。 According to several embodiments, which can be combined with other embodiments described herein, the light source 214 can be configured, for example, as a filament bulb, a tungsten halogen bulb, a light emitting diode (LEDs), high power. LEDs or xenon arc lamps (Xe-Arc-Lamps). Light source 214 is configurable such that the light source can be turned on and off for a short period of time. For switching, the light source can be connected to a control unit (not shown).
根據可與此處所述其他實施例結合之數個實施例，該至少一光學量測裝置係位於將進行量測之基板120之一側上，如第4圖中範例性所示。根據數個實施例，積分球213係以相隔距離D1相對於實質上垂直配置之基板120配置，距離D1係與基板之第一表面121有關，在±25mm之公差內D1=30mm，特別是在±20mm之公差內，更特別是在±15mm之公差內。如第4圖中範例性所示，積分球213可提供有光出口埠216，光出口埠216以相隔距離D1相對於基板120之第一表面121配置，在±25mm之公差內D1=30mm，特別是在±20mm之公差內，更特別是在±15mm之公差內。藉此，自積分球發出而通過光出口埠216 之漫射光可照射在基板上，用於量測基板之至少一光學性質。藉由以漫射光照亮基板，照射於基板上之光係在整個基板之被照射處具有相同之強度。根據可與此處所述其他實施例結合之一些實施例，發出之漫射光之特徵可為數個角度所射出的光，特別是具有均勻角度分佈之光之強度。舉例來說，此可藉由在積分球中之漫反射(diffuse reflection)來產生，積分球例如是布利希球(Ulbricht sphere)，其中球中之材料係選擇以提供漫反射。 According to several embodiments, which can be combined with other embodiments described herein, the at least one optical measuring device is located on one side of the substrate 120 to be measured, as exemplarily shown in FIG. According to several embodiments, the integrating sphere 213 is disposed at a distance D1 relative to the substantially vertically disposed substrate 120, the distance D1 being associated with the first surface 121 of the substrate, within a tolerance of ±25 mm, D1 = 30 mm, particularly Within ±20mm tolerance, and more particularly within ±15mm tolerance. As exemplarily shown in FIG. 4, the integrating sphere 213 may be provided with a light exit port 216, which is disposed at a distance D1 from the first surface 121 of the substrate 120, within a tolerance of ±25 mm, D1 = 30 mm, Especially within tolerances of ±20 mm, more particularly within tolerances of ±15 mm. Thereby, the self-integrating sphere is emitted and passes through the light exit port 216 The diffused light can be illuminated on the substrate for measuring at least one optical property of the substrate. By illuminating the substrate with diffused light, the light that impinges on the substrate has the same intensity across the substrate. According to some embodiments, which may be combined with other embodiments described herein, the diffused light emitted may be characterized by a plurality of angles of light, particularly the intensity of light having a uniform angular distribution. For example, this can be produced by diffuse reflection in an integrating sphere, such as an Ulbricht sphere, where the material in the sphere is selected to provide diffuse reflection.
由於根據此處所述實施例之量測配置之故，量測系統相對於基板位置與基板翹曲之公差係可增加。舉例來說，導致例如是+-1°之+-2°之角度誤差的基板翹曲可在此處所述之量測的公差之中。 Due to the metrology configuration in accordance with the embodiments described herein, the tolerance of the metrology system relative to substrate position and substrate warpage can be increased. For example, substrate warpage that results in an angular error of, for example, +-1° +-2° can be among the measured tolerances described herein.
如第4圖中範例性所示，在光束離開光出口埠216之前，光束可在積分球的內表面上具有原點P之位置，光束係以具有箭頭之實線表示光之方向。光束可傳輸通過基板或自基板反射，如第4圖中範例性所示，且在反射之情況中，在以具有反射角之方式進入光出口埠216。根據可與此處所述其他實施例結合之數個實施例，第一光偵測裝置212係配置且排列，使得來自基板120反射之光可藉由第一光偵測裝置212偵測，來自基板120之光例如是來自基板120之第一表面121。離開積分球213而通過光出口埠216之光束以及進入光出口埠216之反射光束之間的角度可為在本揭露中之光束的角度β。 As exemplarily shown in Fig. 4, before the beam exits the light exit port 216, the beam may have a position of the origin P on the inner surface of the integrating sphere, and the beam is indicated by the solid line having the arrow. The light beam can be transmitted through or reflected from the substrate, as exemplarily shown in FIG. 4, and in the case of reflection, enters the light exit port 216 in a manner having a reflection angle. According to several embodiments, which can be combined with other embodiments described herein, the first photodetecting device 212 is configured and arranged such that light reflected from the substrate 120 can be detected by the first photo detecting device 212. The light of the substrate 120 is, for example, from the first surface 121 of the substrate 120. The angle between the beam exiting the integrating sphere 213 through the light exit pupil 216 and the reflected beam entering the light exit pupil 216 may be the angle β of the beam of light in the present disclosure.
根據數個實施例，如第4圖中範例性所示，光學量 測裝置210包括量測軸217。根據數個實施例，量測軸217係實質上垂直於基板120之第一表面121。於本揭露中，由第一光偵測裝置所偵測之自基板反射的光束的一方向係意指第一光偵測裝置的偵測方向，如在第4圖中由參考編號218範例性標示。根據數個實施例，在偵測方向218與量測軸217之間的角度α係在2°至10°的範圍內，特別是在2°至8°的範圍內，更特別是在2°至4°的範圍內，較佳地係少於4°。 According to several embodiments, as exemplarily shown in FIG. 4, the optical quantity The measuring device 210 includes a measuring shaft 217. According to several embodiments, the measurement axis 217 is substantially perpendicular to the first surface 121 of the substrate 120. In the present disclosure, the direction of the light beam reflected from the substrate detected by the first light detecting device is the direction of detection of the first light detecting device, as exemplified by reference numeral 218 in FIG. Marked. According to several embodiments, the angle α between the detection direction 218 and the measuring axis 217 is in the range of 2° to 10°, in particular in the range of 2° to 8°, more particularly 2°. In the range of up to 4°, preferably less than 4°.
根據可與此處所述其他實施例結合之數個實施例，積分球213具有150mm或更少之內徑，特別是100mm或更少之內徑，更特別是75mm或更少之內徑。根據數個實施例，在提供具有較大之積分球的發光裝置中，光出口埠216之尺寸對基板之照射品質的影響可補償，特別是減小。 According to several embodiments, which can be combined with other embodiments described herein, the integrating sphere 213 has an inner diameter of 150 mm or less, particularly an inner diameter of 100 mm or less, more particularly an inner diameter of 75 mm or less. According to several embodiments, in providing a lighting device having a larger integrating sphere, the effect of the size of the light exit pupil 216 on the illumination quality of the substrate can be compensated, particularly reduced.
根據可與此處所述其他實施例結合之數個實施例，積分球213之光出口埠216可具有25mm或更少之直徑，特別是15mm或更少之直徑，更特別是10mm或更少之直徑。藉由增加光出口埠之直徑，較大部分之基板可被照亮而用於量測基板之該至少一光學性質。 According to several embodiments, which can be combined with other embodiments described herein, the light exit pupil 216 of the integrating sphere 213 can have a diameter of 25 mm or less, in particular a diameter of 15 mm or less, more particularly 10 mm or less. The diameter. By increasing the diameter of the light exit pupil, a larger portion of the substrate can be illuminated for measuring the at least one optical property of the substrate.
根據可與此處所述其他實施例結合之數個實施例，第一光偵測裝置212係配置且排列，使得沒有來自光源214之直射光係由第一光偵測裝置212所偵測。舉例來說，屏幕手段(未繪示)可提供於積分球213內，而避免光源射出之光直接地射入第一光偵測裝置212。此些屏幕手段可例如是藉由遮蔽件(shields)、孔 (apertures)或透鏡(lenses)來實現，遮蔽件、孔或透鏡係配置及排列，使得沒有光源214射出之直射光可照射到第一光偵測裝置212。 According to several embodiments, which can be combined with other embodiments described herein, the first light detecting device 212 is configured and arranged such that no direct light from the light source 214 is detected by the first light detecting device 212. For example, a screen means (not shown) may be provided in the integrating sphere 213 to prevent the light emitted by the light source from directly entering the first light detecting device 212. Such screen means can be, for example, by shields, holes The apertures, apertures, or lens systems are arranged and arranged such that direct light that is not emitted by the light source 214 can illuminate the first light detecting device 212.
根據可與此處所述其他實施例結合之數個實施例，第一光偵測裝置212係配置及排列，使得沒有自積分球之內側反射之光係由第一光偵測裝置212所偵測。舉例來說，第一光偵測裝置212可配置，使得只有例如是因反射在基板120上而進入通過積分球213之光出口埠216的光可由第一光偵測裝置212所偵測。 According to several embodiments, which can be combined with other embodiments described herein, the first light detecting device 212 is configured and arranged such that light that is not reflected from the inside of the integrating sphere is detected by the first light detecting device 212. Measurement. For example, the first light detecting device 212 can be configured such that only light that enters the light exit port 216 passing through the integrating sphere 213 due to reflection on the substrate 120 can be detected by the first light detecting device 212.
根據可與此處所述其他實施例結合之數個實施例，量測配置200可包括至少三個光學量測裝置210，如第1圖中範例性所示。該至少三個光學量測裝置可配置於一實質上垂直線的不同高度處，實質上垂直線如第1圖中以參考編號222範例性標註。該至少三個光學量測裝置可亦配置於不同之數個實質上垂直線上的不同高度處，不同之數個實質上垂直線例如是平行於第1圖中以參考編號222範例性標註之線。藉由提供至少三個光學量測裝置，可同時執行對基板之數種量測。不同量測裝置之量測可相較以取得有關於基板之均勻度的資訊。藉此，在基板的數個選擇之位置可達到高準確度的量測。因此，已處理之基板的特性可量測且監控，用以確認已處理之基板的高可再現性品質。 According to several embodiments, which can be combined with other embodiments described herein, the metrology configuration 200 can include at least three optical metrology devices 210, as exemplarily shown in FIG. The at least three optical metrology devices can be disposed at different heights of a substantially vertical line, and the substantially vertical lines are exemplarily labeled with reference numeral 222 in FIG. The at least three optical measuring devices can also be disposed at different heights on different substantially vertical lines, and the plurality of substantially vertical lines are, for example, parallel to the line labeled by reference numeral 222 in FIG. . By providing at least three optical measuring devices, several measurements of the substrate can be performed simultaneously. The measurement of different measuring devices can be compared to obtain information about the uniformity of the substrate. Thereby, a highly accurate measurement can be achieved at a plurality of selected positions of the substrate. Therefore, the characteristics of the processed substrate can be measured and monitored to confirm the high reproducibility of the processed substrate.
根據可與此處所述其他實施例結合之數個實施例，量測配置200包括至少一光學量測裝置210，用於量測垂直配置 之大面積基板之至少一光學性質，量測配置200係提供於設備100的出口埠112後，用於處理大面積基板，如第1圖中範例性所示。藉由提供量測裝置於設備之出口埠後來處理大面積基板，用於處理大面積基板之設備可以具有量測配置而改良，如此處所述的簡單的方式。 According to several embodiments, which can be combined with other embodiments described herein, the metrology configuration 200 includes at least one optical metrology device 210 for measuring vertical configurations At least one optical property of the large area substrate, the measurement configuration 200 is provided after the exit port 112 of the device 100 for processing a large area substrate, as exemplarily shown in FIG. By providing a metrology device at the exit of the device and then processing the large area substrate, the device for processing the large area substrate can be modified with a measurement configuration, as described herein in a simple manner.
根據可與此處所述其他實施例結合之數個實施例，用於處理大面積基板之設備係為串聯式(in-line)處理設備。根據此處所述實施例之用於處理大面積基板之串聯式處理設備可包括一連串之腔體，也就是包括至少一腔體之腔體配置110。根據數個實施例，腔體配置110之該至少一腔體包括具有數個開口之數個腔體牆，其中此些開口係配置，用於傳輸本質上垂直方向之基板於其通過。因此，此些開口可具有狹縫之形狀，特別是垂直之狹縫。根據可與此處所述其他實施例結合之數個實施例，該至少一腔體之此些開口可包括可開啟或關閉之鎖件。 According to several embodiments, which can be combined with other embodiments described herein, the apparatus for processing large area substrates is an in-line processing apparatus. A tandem processing apparatus for processing a large area substrate in accordance with embodiments described herein can include a series of cavities, that is, a cavity configuration 110 including at least one cavity. According to several embodiments, the at least one cavity of the cavity arrangement 110 includes a plurality of cavity walls having a plurality of openings, wherein the openings are configured to transmit a substantially vertical substrate through which the substrate passes. Thus, such openings may have the shape of a slit, particularly a vertical slit. According to several embodiments, which can be combined with other embodiments described herein, the openings of the at least one cavity can include locks that can be opened or closed.
根據可與此處所述其他實施例結合之數個實施例，腔體配置110之該至少一腔體可具有法蘭，用於連接真空系統，例如是真空幫浦或類似之裝置。藉此，該至少一腔體可進行排氣。 According to several embodiments, which may be combined with other embodiments described herein, the at least one cavity of the cavity arrangement 110 may have a flange for connection to a vacuum system, such as a vacuum pump or the like. Thereby, the at least one cavity can be vented.
根據可與此處所述其他實施例結合之數個實施例，腔體配置之該至少一腔體可為選自群組之腔體，此群組係由緩衝腔體(buffer chamber)、加熱腔體、傳輸腔體、週期時間調整腔體(cycle-time-adjusting chamber)、沉積腔體、處理腔體或類似之腔體所組成。 According to several embodiments, which can be combined with other embodiments described herein, the at least one cavity of the cavity configuration can be a cavity selected from the group consisting of a buffer chamber, heating A cavity, a transfer chamber, a cycle-time-adjusting chamber, a deposition chamber, a processing chamber, or the like.
根據可與此處所述其他實施例結合之數個實施例，腔體配置之至少一腔體可為一處理腔體。根據本揭露，「處理腔體」可理解為一腔體，用於處理基板之處理裝置係配置於此腔體中。因此，根據此處所述實施例之處理裝置可理解為用於處理基板之任何裝置。舉例來說，處理裝置可為用於沉積一層於基板上之沉積源。因此，包括沉積源之處理腔體可視為在本揭露中之沉積腔體。沉積腔體可為化學氣相沉積(chemical vapor deposition，CVD)腔體或物理氣相沉積(physical vapor deposition，PVD)腔體。 According to several embodiments, which may be combined with other embodiments described herein, at least one cavity of the cavity configuration may be a processing chamber. According to the disclosure, a "processing chamber" can be understood as a cavity, and a processing device for processing a substrate is disposed in the cavity. Thus, a processing device in accordance with embodiments described herein can be understood to be any device for processing a substrate. For example, the processing device can be a deposition source for depositing a layer on a substrate. Thus, a processing chamber including a deposition source can be considered as a deposition chamber in the present disclosure. The deposition chamber may be a chemical vapor deposition (CVD) chamber or a physical vapor deposition (PVD) chamber.
根據可與此處所述其他實施例結合之數個實施例，做為一沉積源之處理裝置係提供做為一濺鍍靶材，例如是可轉動的濺鍍靶材，其可使用於PVD腔體中，PVD腔體例如是取自AKT®或取自德國應用材料有限公司(Applied Materials Gmbh & Co.KG)，AKT®係為位於加州聖塔克拉拉之應用材料公司(Applied Materials,Inc.,Santa Clara,California)之子公司，德國應用材料有限公司位於德國的阿爾策瑙(Alzenau)。根據數個實施例，應用於此處所述設備之實施例中的沉積源及/或處理腔體可為沉積源及/或處理腔體，處理腔體係取自AKT®且使用於AKT Aristo PVD系統中。然而，應理解的是，濺鍍靶材在其他PVD腔體中可具有效用，其他PVD腔體包括配置以處理由其他製造商生產的大面積基板之那些腔體。 According to several embodiments, which can be combined with other embodiments described herein, the processing device as a deposition source is provided as a sputtering target, such as a rotatable sputtering target, which can be used for PVD. In the cavity, the PVD cavity is taken, for example, from AKT ® or from Applied Materials Gmbh & Co. KG, and AKT ® is Applied Materials, Inc., located in Santa Clara, California. , a subsidiary of Santa Clara, California, Germany Applied Materials Ltd. is located in Alzenau, Germany. According to several embodiments, the deposition source and/or processing chamber used in the embodiments of the apparatus described herein may be a deposition source and/or a processing chamber, the processing chamber system being taken from AKT® and used in AKT Aristo PVD. In the system. However, it should be understood that the sputter target may have utility in other PVD cavities, and other PVD cavities include those configured to handle large area substrates produced by other manufacturers.
根據可與此處所述其他實施例結合之數個實施例，處理裝置可配置以提供直流濺鍍(direct current(DC)sputtering)、 脈衝濺鍍(pluse sputtering)、或中頻濺鍍(middle frequency(MF)sputtering)。根據可與此處所述其他實施例結合之數個實施例，中頻濺鍍包括在5kHz到100kHz之範圍中的頻率，特別是在25kHz到50kHz之範圍中的頻率。 According to several embodiments, which can be combined with other embodiments described herein, the processing device can be configured to provide direct current (DC) sputtering, Pulse sputtering, or middle frequency (MF) sputtering. According to several embodiments, which can be combined with other embodiments described herein, intermediate frequency sputtering includes frequencies in the range of 5 kHz to 100 kHz, particularly in the range of 25 kHz to 50 kHz.
根據可與此處所述其他實施例結合之數個實施例，用於處理大面積基板之設備可適用於使用濺鍍技術，濺鍍技術通常係應用於製造半導體、液晶顯示器(Liquid Crystal Display，LCD)、電漿顯示面板(Plasma Display Panel，PDP)及類似之設備之薄膜沉積製程中。 According to several embodiments, which can be combined with other embodiments described herein, an apparatus for processing a large area substrate can be adapted to use a sputtering technique, which is generally applied to the manufacture of a semiconductor, liquid crystal display (Liquid Crystal Display, In the thin film deposition process of LCD), Plasma Display Panel (PDP) and similar devices.
根據可與此處所述其他實施例結合之數個實施例，配置以做為沉積腔體的腔體配置的該至少一腔體可配置來用於沉積材料，材料可選自由低折射率材料、中折射率材料及高折射率材料所組成之群組。低折射率材料例如是SiO2、MgF，中折射率材料例如是SiN,Al2O3、AlN、ITO、IZO、SiOxNy、AlOxNy，高折射率材料例如是Nb2O5、TiO2、TaO2、或其他高折射率材料。 According to several embodiments, which can be combined with other embodiments described herein, the at least one cavity configured to be a cavity configuration of the deposition cavity can be configured for depositing material, the material being selectable from a low refractive index material a group consisting of a medium refractive index material and a high refractive index material. The low refractive index material is, for example, SiO 2 or MgF, and the medium refractive index material is, for example, SiN, Al 2 O 3 , AlN, ITO, IZO, SiO x N y , AlO x N y , and the high refractive index material is, for example, Nb 2 O 5 . , TiO 2 , TaO 2 , or other high refractive index materials.
因此，根據可與此處所述其他實施例結合之數個實施例，靶材材料可選自由低折射率材料、中折射率材料及高折射率材料所組成之群組。低折射率材料例如是SiO2、MgF，中折射率材料例如是SiN,Al2O3、AlN、ITO、IZO、SiOxNy、AlOxNy，高折射率材料例如是Nb2O5、TiO2、TaO2、或其他高折射率材料。 Thus, in accordance with several embodiments that can be combined with other embodiments described herein, the target material can be selected from the group consisting of low refractive index materials, medium refractive index materials, and high refractive index materials. The low refractive index material is, for example, SiO 2 or MgF, and the medium refractive index material is, for example, SiN, Al 2 O 3 , AlN, ITO, IZO, SiO x N y , AlO x N y , and the high refractive index material is, for example, Nb 2 O 5 . , TiO 2 , TaO 2 , or other high refractive index materials.
根據可與此處所述其他實施例結合之數個實施例，靶材材料一般係根據將沉積於基板上之材料提供，或根據預定與 處理區域中之反應氣體作用，以在與反應氣體反應後接著沉積於基板上之材料提供。 According to several embodiments, which can be combined with other embodiments described herein, the target material is typically provided according to the material to be deposited on the substrate, or according to a predetermined The reaction gas in the treatment zone acts to provide a material that is subsequently deposited on the substrate after reaction with the reaction gas.
根據可與此處所述其他實施例結合之數個實施例，可提供兩個傳輸路徑，使得第一基板可追趕上已進行處理之第二基板。藉此，用於處理大面積基板之設備可以數個基板可相異地處理、接續地處理或同時地處理的方式提供。 According to several embodiments, which can be combined with other embodiments described herein, two transmission paths can be provided such that the first substrate can catch up with the second substrate that has been processed. Thereby, the apparatus for processing a large-area substrate can be provided in such a manner that several substrates can be processed differently, successively, or simultaneously.
根據可與此處所述其他實施例結合之數個實施例，用於沿著傳輸軌道移動之傳輸系統可提供於本質上垂直配置之基板的底部。傳輸系統可包括用於基板之傳輸載件。如第2及3圖中範例性所示，傳輸載件131可配置成框架結構，用於支撐基板120，特別是用於支撐於垂直配置狀態中之基板。再者，傳輸載件可以具有數個次框架來撐基板的方式配置，其中次框架係被圍繞於底框架中。第2及3圖繪示用於實質上垂直配置之基板120之傳輸載件131之範例性實施例的示意圖，傳輸載件131包括底框架132及數個次框架133。如可見於第2及3圖，此些次框架可在尺寸與開口率(aspect ratio)上不同，其中不同傳輸載件之底框架的尺寸係本質上決定於腔體配置之最小之至少一腔體的尺寸。 According to several embodiments, which can be combined with other embodiments described herein, a transport system for moving along a transport track can be provided at the bottom of a substantially vertically-configured substrate. The transport system can include a transport carrier for the substrate. As exemplarily shown in Figures 2 and 3, the transport carrier 131 can be configured as a frame structure for supporting the substrate 120, particularly for supporting the substrate in a vertically disposed state. Furthermore, the transport carrier can be configured in a number of sub-frames to support the substrate, wherein the secondary frame is surrounded by the bottom frame. 2 and 3 are schematic views of an exemplary embodiment of a transport carrier 131 for a substrate 120 that is substantially vertically disposed, the transport carrier 131 including a bottom frame 132 and a plurality of sub-frames 133. As can be seen in Figures 2 and 3, the sub-frames can differ in size and aspect ratio, wherein the dimensions of the bottom frame of the different transport carriers are essentially determined by at least one cavity of the cavity configuration. The size of the body.
根據可與此處所述其他實施例結合之數個實施例，次框架可配置來用以支撐如此處所特別提及之第4.5代、第5代、第7.5代、第8.5代、第10代、第11代、或第12代之基板。再者，次框架可亦配置而具有一尺寸，此尺寸小於此處所特別提及之大面積基板之尺寸。根據可與此處所述其他實施例結合之數個 實施例，具有不同尺寸之數個次框架可配置於傳輸載件之底框架中。藉此，同時處理不同尺寸之基板係可達成。 According to several embodiments, which can be combined with other embodiments described herein, the secondary frame can be configured to support the 4.5th, 5th, 7.5th, 8.5th, and 10th generations as specifically mentioned herein. , 11th generation, or 12th generation substrate. Furthermore, the secondary frame can also be configured to have a size that is smaller than the size of the large-area substrate specifically mentioned herein. According to several combinations that can be combined with other embodiments described herein In an embodiment, a plurality of sub-frames having different sizes may be disposed in the bottom frame of the transport carrier. Thereby, it is possible to simultaneously process substrates of different sizes.
根據可與此處所述其他實施例結合之數個實施例，用於垂直配置之基板的傳輸系統可包括傳輸元件，例如是滾輪及/或導引元件，用以沿著傳輸路徑導引基板或傳輸載件。舉例來說，導引元件可為磁性導引元件，具有例如是兩個狹縫之凹槽，基板可傳輸通過凹槽。導引元件可亦包括用以線性移動之軸承，使得從第一傳輸軌道至第二傳輸軌道之轉換可進行。 According to several embodiments, which can be combined with other embodiments described herein, a transmission system for a vertically disposed substrate can include a transmission element, such as a roller and/or a guiding element, for guiding the substrate along the transport path. Or transfer the carrier. For example, the guiding element can be a magnetic guiding element having a groove, for example two slits, through which the substrate can be transported. The guiding element may also include a bearing for linear movement such that switching from the first transmission track to the second transmission track is possible.
根據可與此處所述其他實施例結合之數個實施例，磁性導引元件係配置而用以沿著傳輸路徑非接觸式導引基板或傳輸載件。非接觸式導引可包括在導引元件及基板或傳輸載件之間的橫向公差，使得基板或傳輸載件之橫向位置可在傳輸期間於提供之公差中變化。藉此，基板之翹曲效應也有可能發生。藉由使用根據此處所述實施例的用於處理大面積基板的設備中之此處所述之量測配置，橫向位置的變化或基板相對於量測配置之變化並不會影響對基板進行量測的準確性。也就是說，此處所述之量測配置係具有補償翹曲效應及/或橫向位置之變化或基板相對於量測配置之變化的能力。 According to several embodiments, which can be combined with other embodiments described herein, the magnetic guiding element is configured to non-contact guide the substrate or transport carrier along the transport path. The non-contact guide can include lateral tolerances between the guide element and the substrate or transport carrier such that the lateral position of the substrate or transport carrier can be varied during the tolerance provided during transport. Thereby, the warping effect of the substrate may also occur. By using the measurement configuration described herein in an apparatus for processing a large area substrate in accordance with embodiments described herein, variations in lateral position or changes in substrate relative to the measurement configuration do not affect the substrate The accuracy of the measurement. That is, the measurement configuration described herein has the ability to compensate for warpage effects and/or changes in lateral position or changes in the substrate relative to the measurement configuration.
根據可與此處所述其他實施例結合之數個實施例，傳輸系統之傳輸元件及/或導引元件可配置於基板之上及/或下端上，特別是在用於基板之傳輸載件的上及/或下端上。傳輸元件可同時地移動，用於基板在腔體配置內或通過腔體配置的橫向傳 輸。導引元件亦可和傳輸元件同時移動。 According to several embodiments, which can be combined with other embodiments described herein, the transmission element and/or the guiding element of the transmission system can be arranged on the upper and/or lower end of the substrate, in particular on the transport carrier for the substrate On the upper and / or lower end. The transport elements can be moved simultaneously for lateral transfer of the substrate within the cavity configuration or through the cavity configuration lose. The guiding element can also move simultaneously with the transmission element.
根據可與此處所述其他實施例結合之數個實施例，傳輸元件可包括驅動器，用以驅動傳輸元件。舉例來說，傳輸元件可包括皮帶驅動器，用以驅動傳輸元件之轉動，以沿著傳輸路徑傳輸在傳輸滾輪上之基板或載件。根據數個實施例，例如是皮帶驅動器之驅動器之一或數者可藉由馬達驅動。 According to several embodiments, which can be combined with other embodiments described herein, the transmission element can include a driver for driving the transmission element. For example, the transport element can include a belt drive for driving rotation of the transport element to transport the substrate or carrier on the transport roller along the transport path. According to several embodiments, one or more of the drives, such as a belt drive, can be driven by a motor.
根據此處所述實施例，用於處理大面積基板之設備包括處理腔體之改良應用且允許基板輸送至處理系統中係以連續或類似連續之方式。根據可與此處所述其他實施例結合之典型實施例，用於處理大面積基板之設備包括空的載入/載出腔體(load-lock chamber)，用以***基板於設備中。空的載入/載出腔體可配置而用以改變內部壓力，內部壓力係自大氣壓力改變至真空或者反之亦然，真空例如是10mbar或以下之壓力。 In accordance with embodiments described herein, an apparatus for processing a large area substrate includes an improved application of the processing chamber and allows the substrate to be transported into the processing system in a continuous or similar continuous manner. According to an exemplary embodiment that can be combined with other embodiments described herein, an apparatus for processing a large area substrate includes an empty load-lock chamber for inserting a substrate into the apparatus. The empty loading/unloading chamber is configurable to change the internal pressure, the internal pressure is changed from atmospheric pressure to vacuum or vice versa, and the vacuum is, for example, a pressure of 10 mbar or less.
根據可與此處所述其他實施例結合之典型實施例，用於處理大面積基板之設備包括出口載入/載出腔體，用以取出基板到設備外。出口載入/載出腔體可配置而用以改變內部壓力，內部壓力係自大氣壓力改變至真空或者反之亦然，真空例如是10mbar或以下之壓力。根據數個實施例，出口載入/載出腔體包括出口埠112。因此，在傳輸通過設備之腔體配置之後，基板可於出口埠112離開設備，如第1圖中範例性所示。 According to an exemplary embodiment that can be combined with other embodiments described herein, an apparatus for processing a large area substrate includes an exit loading/unloading cavity for removing the substrate out of the apparatus. The outlet loading/unloading chamber is configurable to change the internal pressure, the internal pressure is changed from atmospheric pressure to vacuum or vice versa, and the vacuum is, for example, a pressure of 10 mbar or less. According to several embodiments, the outlet loading/unloading cavity includes an outlet port 112. Thus, after transporting through the cavity configuration of the device, the substrate can exit the device at the exit port 112, as exemplarily shown in FIG.
根據此處所述數個實施例，腔體配置可包括至少一真空腔體。該至少一真空腔體可配置而用於在10mbar或以下之 壓力傳輸或處理基板。因此，在空的載入/載出腔體與相鄰後續(downstream)之腔體之間的真空閥係開啟以進一步傳輸基板至相鄰腔體中之前，空的載入/載出腔體可配置而用於排氣。因此，在空的出口載入/載出腔體與相鄰前接(upstream)之腔體之間的真空閥係開啟以進一步傳輸基板至出口載入/載出腔體中之前，出口載入/載出腔體可配置而用於排氣。 According to several embodiments described herein, the cavity configuration can include at least one vacuum chamber. The at least one vacuum chamber is configurable for use at 10 mbar or less Pressure transfer or handling of the substrate. Thus, the empty loading/unloading cavity is opened before the vacuum valve between the empty loading/unloading chamber and the adjacent downstream cavity is opened to further transport the substrate into the adjacent cavity. Configurable for exhaust. Therefore, the outlet is loaded before the vacuum valve between the empty outlet loading/unloading chamber and the adjacent upstream chamber is opened to further transfer the substrate to the outlet loading/unloading chamber. The loading chamber is configurable for venting.
藉由提供根據此處所述實施例之用於處理大面積基板之設備，已處理之基板的特性可進行量測且監控來確保已處理之基板的高可再現品質。因此，就此處所述之設備來說，用於處理大面積基板之設備係提供而可偵測出例如是因製程誤差所導致的基板或基板上之塗佈的結構或組成中的非均勻度。藉此，就此處所述之設備來說，低品質基的板可辨別出來。再者，就本揭露之設備來說，處理誤差可在早期的階段偵測出來，使得處理可停止以避免製造出缺陷的產品。藉此，整體之製程成本可減到最小。 By providing an apparatus for processing a large area substrate in accordance with embodiments described herein, the characteristics of the processed substrate can be measured and monitored to ensure a high reproducible quality of the processed substrate. Thus, for the apparatus described herein, equipment for processing large-area substrates is provided to detect, for example, non-uniformities in the structure or composition of the coating on the substrate or substrate due to process tolerances. . Thereby, the low quality based panels can be discerned for the equipment described herein. Moreover, with the disclosed apparatus, processing errors can be detected at an early stage so that processing can be stopped to avoid manufacturing defective products. As a result, the overall process cost can be minimized.
根據可與此處所述其他實施例結合之數個實施例，第一光偵測裝置可包括處理可見輻射之能力。根據數個實施例，第一光偵測裝置可適用於處理在特殊光範圍(extra-optical range)中之輻射，例如是紅外線、紫外線輻射。舉例來說，第一光偵測裝置可為光感測器，此光感測器可適用於處理在380-780nm之可見輻射範圍中及/或780nm至3000nm之紅外線輻射範圍中及/或200nm至380nm之紫外線輻射範圍中之輻射。舉例來說，第 一光偵測裝置可為光電感測器(photo sensor)或電荷耦合元件(charged coupled devices，CCD)感測器。第一光偵測裝置可提供而用於取得量測資料及參考資料。再者，第一光偵測裝置可包括訊號出口埠，訊號出口埠可連接於資料處理或資料分析單元(未繪示於圖式中)。 According to several embodiments, which can be combined with other embodiments described herein, the first light detecting device can include the ability to process visible radiation. According to several embodiments, the first light detecting device can be adapted to process radiation in an extra-optical range, such as infrared, ultraviolet radiation. For example, the first photodetecting device can be a photo sensor, which can be adapted to process in the visible radiation range of 380-780 nm and/or the infrared radiation range of 780 nm to 3000 nm and/or 200 nm. Radiation in the ultraviolet radiation range up to 380 nm. For example, A light detecting device can be a photo sensor or a charge coupled device (CCD) sensor. The first photodetecting device can be provided for obtaining measurement data and reference materials. Furthermore, the first photodetecting device can include a signal exit port, and the signal exit port can be connected to a data processing or data analyzing unit (not shown in the drawings).
根據數個實施例，第一光偵測裝置可經由纜線或無線連接方式連接於資料處理或資料分析單元。資料處理或資料分析單元可適用於檢測且分析第一光偵測裝置的訊號。如果基板之任何特性係量測出來而定義為不尋常時，資料處理或資料分析單元可偵測到改變且啟動(trigger)一反應，例如是停止處理基板。 According to several embodiments, the first photodetecting device can be connected to the data processing or data analysis unit via a cable or wireless connection. The data processing or data analysis unit can be adapted to detect and analyze the signal of the first photodetecting device. If any of the properties of the substrate are measured and defined as unusual, the data processing or data analysis unit can detect the change and trigger a reaction, such as stopping the processing of the substrate.
根據可與此處所述其他實施例結合之數個實施例，藉由該至少一光學量測裝置之第一光偵測裝置所量測之基板的該至少一光學性質包括來自基板之反射率。 According to several embodiments, which can be combined with other embodiments described herein, the at least one optical property of the substrate measured by the first photodetecting device of the at least one optical measuring device comprises a reflectivity from the substrate .
參照第5及6圖，例如是因重力作用於垂直配置之基板上的翹曲之影響係進行分析。由於翹曲可視為相對於基板之原始方向之基板傾斜或移動係同時發生，基板傾斜或移動的影響可分開分析。因此，相較於如第4圖中所示之基板的參考方向，基板之移動的影響係參照第5圖進行分析。再者，相對於如第4圖中之基板的參考方向，基板之傾斜的影響係參照第6圖進行評估。 Referring to Figures 5 and 6, for example, the influence of the warpage caused by gravity on the vertically disposed substrate is analyzed. Since the warpage can be regarded as the substrate tilt or the movement of the substrate in the original direction with respect to the substrate, the influence of the tilt or movement of the substrate can be separately analyzed. Therefore, the influence of the movement of the substrate is analyzed with reference to Fig. 5 as compared with the reference direction of the substrate as shown in Fig. 4. Furthermore, the influence of the tilt of the substrate with respect to the reference direction of the substrate as in Fig. 4 is evaluated with reference to Fig. 6.
第5圖繪示根據第4圖之光學量測裝置之一實施例之剖面圖，其中相較於如第4圖中所示之基板與光學量測裝置之 相對位置，基板之相對位置係相對於光學量測裝置橫向地移動。如第5圖中所示，基板120之橫向移動係以△D標註。如第5圖中所示，當基板係移動距離△D時，相較於如第4圖中所示之光束的原點P的位置，在從基板120反射後由第一光偵測裝置所偵測的光束之原點P的位置係發現已經移動離開第一光偵測裝置212。如第5圖中所示，在積分球213的光出口埠216與基板120之間的距離(D1+△D)增加的情況下，光束之角度(β+△β)係增加。因此，光出口埠216之尺寸以及第一光偵測裝置212之位置及尺寸係決定基板與光出口埠216之間的最大距離，自基板反射之光可由第一光偵測裝置212所偵測。既然為了量測基板之該至少一光學性質，基板係以漫射光照亮，照射到基板上之光係在基板被照射部分有相同的強度。因此，所量測之基板之該至少一光學性質的準確性係與基板和此處所述之量測配置無關，特別是在±25mm之公差中30mm之距離，特別是在±20mm之公差中，更特別是在±15mm之公差中。 Figure 5 is a cross-sectional view showing an embodiment of the optical measuring device according to Figure 4, wherein the substrate and optical measuring device are as shown in Figure 4 In relative position, the relative position of the substrate is laterally moved relative to the optical measuring device. As shown in Fig. 5, the lateral movement of the substrate 120 is indicated by ΔD. As shown in FIG. 5, when the substrate is moved by the distance ΔD, the position of the origin P of the light beam as shown in FIG. 4 is reflected by the first photodetecting device after being reflected from the substrate 120. The position of the origin P of the detected beam is found to have moved away from the first photodetecting device 212. As shown in Fig. 5, in the case where the distance (D1 + ΔD) between the light exit port 216 of the integrating sphere 213 and the substrate 120 is increased, the angle (β + Δβ) of the light beam is increased. Therefore, the size of the light exit port 216 and the position and size of the first light detecting device 212 determine the maximum distance between the substrate and the light exit port 216. The light reflected from the substrate can be detected by the first light detecting device 212. . In order to measure the at least one optical property of the substrate, the substrate is illuminated by diffuse illumination, and the light that impinges on the substrate has the same intensity at the illuminated portion of the substrate. Therefore, the accuracy of the at least one optical property of the measured substrate is independent of the substrate and the measurement configuration described herein, particularly a distance of 30 mm within a tolerance of ±25 mm, particularly within a tolerance of ±20 mm. More especially in the tolerance of ±15mm.
第6圖繪示根據第4圖之光學量測裝置之一實施例的剖面圖，其中相較於如第4圖中之所示之基板之位置，基板之相對位置係傾斜。在第6圖中，基板120之傾斜係以δ標示。如第6圖中所示，當基板係傾斜角度δ時，相較於第4圖中之光束的原點P的位置，在從基板120反射後由第一光偵測裝置212所偵測的光束之原點P的位置係發現已移動離開第一光偵測裝置212。再者，如第6圖中所示，光束之角度(β+δ)可根據基板之傾 斜的角度δ變化。因此，光出口埠216之尺寸以及第一光偵測裝置212之位置及尺寸係決定基板之最大傾斜，自基板反射之光可由第一光偵測裝置212所偵測。既然為了量測基板之該至少一光學性質，基板係以漫射光照亮，照射到基板上之光係在基板被照射部分有相同的強度。因此，所量測之基板之該至少一光學性質的準確性係與基板之傾斜的角度δ無關。 Figure 6 is a cross-sectional view showing an embodiment of the optical measuring apparatus according to Fig. 4, wherein the relative positions of the substrates are inclined as compared with the positions of the substrates as shown in Fig. 4. In Fig. 6, the inclination of the substrate 120 is indicated by δ. As shown in FIG. 6, when the substrate is tilted by an angle δ, the position of the origin P of the light beam in FIG. 4 is detected by the first photodetecting device 212 after being reflected from the substrate 120. The position of the origin P of the beam is found to have moved away from the first photodetecting device 212. Furthermore, as shown in Figure 6, the angle of the beam (β + δ) can be based on the tilt of the substrate The angle of inclination δ varies. Therefore, the size of the light exit port 216 and the position and size of the first photodetecting device 212 determine the maximum tilt of the substrate, and the light reflected from the substrate can be detected by the first photo detecting device 212. In order to measure the at least one optical property of the substrate, the substrate is illuminated by diffuse illumination, and the light that impinges on the substrate has the same intensity at the illuminated portion of the substrate. Therefore, the accuracy of the at least one optical property of the measured substrate is independent of the angle δ of the tilt of the substrate.
如參照第5及6圖之上述概要，例如是因重力作用在垂直配置之基板上的基板翹曲對如此處所述之量測配置之量測準確性之影響可實質上排除。因此，如此處所述之用於處理大面積基板之設備係具有量測實質上垂直配置之大面積基板的至少一光學性質的能力。特別是，根據此處所述實施例之用於處理大面積基板之設備係適用於量測實質上垂直配置之移動的大面積基板的至少一光學性質，特別是以至少1m/min之傳輸速度移動之基板，特別是至少20m/min，更特別是至少35m/min，例如是50m/min。 Referring to the above summary of Figures 5 and 6, for example, the effect of substrate warpage on a vertically disposed substrate due to gravity on the measurement accuracy of the measurement configuration as described herein can be substantially eliminated. Thus, an apparatus for processing a large area substrate as described herein has the ability to measure at least one optical property of a substantially large area substrate that is substantially vertically disposed. In particular, an apparatus for processing a large area substrate in accordance with embodiments described herein is suitable for measuring at least one optical property of a substantially large-area moving substrate, particularly at a transmission speed of at least 1 m/min. The moving substrate, in particular at least 20 m/min, more particularly at least 35 m/min, for example 50 m/min.
再者，根據此處所述實施例，藉由提供用於處理大面積基板之設備，對基板之至少一光學性質可在基板與量測配置間之高達100mm的距離處以及基板傾斜高達±2°處進行高準確度之量測，基板傾斜高達±2°例如是因大面積基板之翹曲導致。 Furthermore, in accordance with embodiments described herein, by providing an apparatus for processing a large area substrate, at least one optical property of the substrate can be as high as 100 mm between the substrate and the measurement configuration and the substrate tilts up to ±2 High-accuracy measurements are made at °°, and the substrate tilts up to ±2°, for example due to warpage of large-area substrates.
根據可與此處所述其他實施例結合之數個實施例，該至少一光學量測裝置210更包括第二光偵測裝置215，用於量測實質上垂直配置之大面積基板之該至少一光學性質。如第7圖 中所範例性繪示，根據此處所述實施例，第二光偵測裝置215可相對發光裝置211配置在基板120之另一側上，特別是相對於積分球的光出口埠216，且特別是在基板120之第二表面122側上。根據數個實施例，第二光偵測裝置215以相隔距離D2相對於實質上垂直配置之基板120配置，距離D2係與基板120之第二表面122有關，在±25mm之公差內D2=30mm，特別是在±20mm之公差內，更特別是在±15mm之公差內。 According to several embodiments, which can be combined with other embodiments described herein, the at least one optical measuring device 210 further includes a second photo detecting device 215 for measuring at least the substantially large-area substrate of the substantially vertical configuration. An optical property. As shown in Figure 7 According to the exemplary embodiment, the second photodetecting device 215 can be disposed on the other side of the substrate 120 with respect to the light emitting device 211, particularly with respect to the light exit port 216 of the integrating sphere, and Especially on the second surface 122 side of the substrate 120. According to several embodiments, the second photodetecting device 215 is disposed at a distance D2 from the substantially vertically disposed substrate 120. The distance D2 is related to the second surface 122 of the substrate 120, within a tolerance of ±25 mm, D2=30 mm. , especially within tolerances of ±20 mm, and more particularly within ±15 mm tolerance.
根據可與此處所述其他實施例結合之數個實施例，第二光偵測裝置可包括處理可見輻射之能力。第二光偵測裝置可適用於處理在特殊光範圍中之輻射，例如是紅外線、紫外線輻射。舉例來說，第二光偵測裝置可為光感測器，此光感測器可適用於處理在380-780nm之可見輻射範圍中及/或780nm至3000nm之紅外線輻射範圍中及/或200nm至380nm之紫外線輻射範圍中之輻射。第二光偵測裝置可為光電感測器或CCD感測器。第二光偵測裝置可提供而用於取得量測資料及取得參考資料。第二光偵測裝置可包括訊號出口埠，訊號出口埠可連接於資料處理或資料分析單元(未繪示於圖式中)。 According to several embodiments, which can be combined with other embodiments described herein, the second light detecting device can include the ability to process visible radiation. The second light detecting device can be adapted to process radiation in a particular range of light, such as infrared, ultraviolet radiation. For example, the second photodetecting device can be a photo sensor, and the photo sensor can be adapted to process in the visible radiation range of 380-780 nm and/or the infrared radiation range of 780 nm to 3000 nm and/or 200 nm. Radiation in the ultraviolet radiation range up to 380 nm. The second photodetecting device can be a photoinductor or a CCD sensor. The second photodetecting device can be provided for obtaining measurement data and obtaining reference materials. The second photodetecting device can include a signal exit port, and the signal exit port can be connected to a data processing or data analysis unit (not shown in the drawings).
根據可與此處所述其他實施例結合之數個實施例，由該至少一光學量測裝置的第二光偵測裝置所量測的基板之該至少一光學性質包括通過基板之穿透率。藉由提供具有第一光偵測裝置及第二光偵測裝置的量測配置，量測基板之穿透率與反射率係可行的。藉此，可取得更多有關於基板之性質的資訊。 According to several embodiments, which can be combined with other embodiments described herein, the at least one optical property of the substrate measured by the second photodetecting device of the at least one optical measuring device comprises a transmittance through the substrate . It is feasible to measure the transmittance and reflectivity of the substrate by providing a measurement configuration having the first photodetecting device and the second photodetecting device. Thereby, more information about the properties of the substrate can be obtained.
根據可與此處所述其他實施例結合之數個實施例，第二光偵測裝置可經由纜線或無線連接方式連接於資料處理或資料分析單元。資料處理或資料分析單元可適用於檢測且分析第二光偵測裝置的訊號。如果基板之任何特性係量測出來而定義為不尋常時，資料處理或資料分析單元可偵測到改變且啟動一反應，例如是停止處理基板。 According to several embodiments, which can be combined with other embodiments described herein, the second photodetecting device can be coupled to the data processing or data analysis unit via a cable or wireless connection. The data processing or data analysis unit can be adapted to detect and analyze the signal of the second photodetecting device. If any of the properties of the substrate are measured and defined as unusual, the data processing or data analysis unit can detect the change and initiate a reaction, such as stopping the processing of the substrate.
根據可與此處所述其他實施例結合之數個實施例，在發光裝置211的積分球213與基板120之第一表面121之間的距離D1及/或在第二光偵測裝置215及基板120的第二表面122之間的距離D2可越小越合適，第二表面122係位於基板之第一表面的對面側。根據數個實施例，距離D1與距離D2係進行選擇，使得基板在傳輸方向中相對於發光裝置211及/或相對於該至少一光學量測裝置210暢通無阻的移動係有可能的。 According to several embodiments, which can be combined with other embodiments described herein, the distance D1 between the integrating sphere 213 of the illumination device 211 and the first surface 121 of the substrate 120 and/or the second photodetecting device 215 and The smaller the distance D2 between the second surfaces 122 of the substrate 120, the more suitable the second surface 122 is on the opposite side of the first surface of the substrate. According to several embodiments, the distance D1 and the distance D2 are selected such that the substrate is movable in the transport direction relative to the illumination device 211 and/or unobstructed relative to the at least one optical measurement device 210.
根據可與此處所述其他實施例結合之數個實施例，量測配置200更包括至少一光擋(light trap)220，配置且排列以擷取穿透基板之光。如第8圖中範例性所示，該至少一光擋220係幾何配置，使得所有入射光照射到一吸收區221。舉例來說，光擋可配置，使得具有強度I0的入射光束在反射出光擋前係反射在至少5個表面上。舉例來說，光可能於光擋中進行反射的吸收區221可包括反射5%之入射光的黑玻璃。因此，在五次反射之後，可能反射出光擋的光的光強度Iout可計算成0.055．I0=3.125□10-7．I0，其等效為零。 According to several embodiments, which can be combined with other embodiments described herein, the measurement arrangement 200 further includes at least one light trap 220 configured and arranged to capture light that penetrates the substrate. As exemplarily shown in FIG. 8, the at least one light shield 220 is geometrically configured such that all incident light illuminates an absorption zone 221. For example, the light block can be configured such that an incident beam having an intensity I 0 is reflected on at least 5 surfaces before being reflected out of the light block. For example, the absorbing region 221 where light may be reflected in the light block may include black glass that reflects 5% of the incident light. Therefore, after five reflections, the light intensity I out of the light that may reflect the light block can be calculated to be 0.05 5 . I 0 = 3.125 □ 10 -7 . I 0 , which is equivalent to zero.
根據可與此處所述其他實施例結合之數個實施例，該至少一光擋220，特別是吸收區221的配置，係配置而用以吸收遍及所有量測波長的全部入射光，例如是在380-780nm之可見輻射範圍中及/或780nm至3000nm之紅外線輻射範圍中及/或200nm至380nm之紫外線輻射範圍中的波長。根據數個實施例，該至少一光擋220係以相隔距離D3相對於實質上垂直配置之基板120配置，特別是相對於基板之第二表面122，距離D3係與基板120之第二表面122有關，在±25mm之公差內D3=30mm，特別是在±20mm之公差內，更特別是在±15mm之公差內。 According to several embodiments, which can be combined with other embodiments described herein, the at least one optical stop 220, and in particular the absorbing region 221, is configured to absorb all incident light throughout all of the measured wavelengths, for example The wavelength in the visible radiation range of 380-780 nm and/or the infrared radiation range of 780 nm to 3000 nm and/or the ultraviolet radiation range of 200 nm to 380 nm. According to several embodiments, the at least one light barrier 220 is disposed at a distance D3 from the substantially vertically disposed substrate 120, particularly with respect to the second surface 122 of the substrate, and the distance D3 is from the second surface 122 of the substrate 120. Relevant, within a tolerance of ±25 mm, D3 = 30 mm, especially within a tolerance of ± 20 mm, and more particularly within a tolerance of ± 15 mm.
雖然未明確地繪示，根據此處所述實施例之圖式中，第二光偵測裝置215可配置在該至少一光擋220中。根據數個實施例，該至少一光擋220之高度係至少50%，特別是至少70%，更特別是至少85%的實質上垂直配置之大面積基板的高度，例如是該至少一光擋的高度可實質上相同於垂直配置之大面積基板的高度，或該至少一光擋的高度可相同於如此處所述具有大面積基板之尺寸的傳輸載件的高度。藉此，光擋可相對於移動之發光裝置為靜態的配置，移動之發光裝置可為此處所述之量測裝置之部分。因此，光擋係配置且排列，使得自移動之發光裝置射出的光可由光擋所擷取，移動之發光裝置例如是沿著實質上垂直之軌道移動，光擋係位於發光裝置之全部的移動軌道的上方。藉此，可排除任何來自進行量測反射之表面之後方的反射。 Although not explicitly shown, in accordance with the embodiments of the embodiments described herein, the second light detecting device 215 can be disposed in the at least one light barrier 220. According to several embodiments, the height of the at least one light barrier 220 is at least 50%, in particular at least 70%, more particularly at least 85%, of the height of the substantially vertical configuration of the large-area substrate, such as the at least one light barrier. The height may be substantially the same as the height of the vertically disposed large area substrate, or the height of the at least one light stop may be the same as the height of the transport member having the size of the large area substrate as described herein. Thereby, the light barrier can be statically configured relative to the moving illumination device, and the moving illumination device can be part of the measurement device described herein. Therefore, the light blocking system is arranged and arranged such that the light emitted from the moving light emitting device can be captured by the light blocking device, and the moving light emitting device moves, for example, along a substantially vertical orbit, and the optical blocking system is located in the entire movement of the light emitting device. Above the track. Thereby, any reflection from the back side of the surface on which the reflection is measured can be excluded.
根據此處所述實施例，藉由提供至少一光擋，來自 基板之反射可在沒有失真的情況下進行量測，失真係源自於雜光反射(parasitic reflections)，而非來自於進行量測之表面。再者，根據數個實施例，該至少一光擋之尺寸係調整，使得提供單一個光擋可足以本質上排除在量測執行之基板之高度上的雜光反射。 According to the embodiment described herein, by providing at least one light block, The reflection of the substrate can be measured without distortion, the distortion being derived from parasitic reflections rather than from the surface being measured. Moreover, according to several embodiments, the size of the at least one optical stop is adjusted such that providing a single optical stop is sufficient to substantially exclude stray light reflections at the height of the substrate on which the measurement is performed.
在第9圖中，根據一實施例之用於處理大面積基板之設備的透視圖係繪示，其可結合此處所述之其他實施例，此處所述之其他實施例中，量測配置200係提供於腔體配置110中，舉例來說，量測配置200係提供於腔體配置之真空腔體中。再者，根據此處所述實施例，第9圖係範例性繪示處理裝置230，處理裝置230例如是提供做為濺鍍靶材之沉積源。 In Fig. 9, a perspective view of an apparatus for processing a large area substrate in accordance with an embodiment, which may be combined with other embodiments described herein, in other embodiments described herein, Configuration 200 is provided in the cavity configuration 110, for example, the measurement configuration 200 is provided in a vacuum chamber of the cavity configuration. Furthermore, in accordance with the embodiments described herein, FIG. 9 is illustrative of a processing device 230 that provides, for example, a deposition source as a sputtering target.
根據可與此處所述其他實施例結合之數個實施例，該至少一光學量測裝置210可配置成可移動的，沿著相對於實質上垂直配置之大面積基板之傳輸方向的實質上垂直方向。藉此，可執行沿著該至少一光學量測裝置210之移動軸的數個不同位置之量測，例如是沿著第1圖中之線222。該至少一第一可移動量測裝置可耦接於軌道，用於支撐手動操作之該至少一光學量測裝置之移動。 According to several embodiments, which can be combined with other embodiments described herein, the at least one optical metrology device 210 can be configured to be movable, substantially along a direction of transmission relative to a substantially large substrate disposed substantially vertically. Vertical direction. Thereby, measurements along a number of different positions of the axis of movement of the at least one optical metrology device 210 can be performed, such as along line 222 in FIG. The at least one first movable measuring device can be coupled to the track for supporting movement of the manually operated at least one optical measuring device.
根據可與此處所述其他實施例結合之數個實施例，可提供用於沿著一軌道移動該至少一第一可移動量測裝置的致動器，軌道例如是線性軌道。致動器可藉由為電流、液體壓力、或氣體壓力之形式的能源操作，致動器係轉換能量為動作。根據一些實施例，用於移動該至少一光學量測裝置之致動器可為電動 馬達(electrical motor)、線性馬達、氣壓致動器、液壓致動器或壓電致動器。 According to several embodiments, which can be combined with other embodiments described herein, an actuator for moving the at least one first movable measuring device along a track, such as a linear track, can be provided. The actuator can be operated by energy in the form of current, liquid pressure, or gas pressure, and the actuator converts energy into action. According to some embodiments, the actuator for moving the at least one optical measuring device may be electric Electrical motor, linear motor, pneumatic actuator, hydraulic actuator or piezoelectric actuator.
在第10圖中，根據此處所述實施例之用於量測實質上垂直配置之大面積基板之至少一光學性質的方法的實施例係繪示。根據用於量測實質上垂直配置之大面積基板之至少一光學性質之方法的實施例，此方法包括：相對於量測配置於傳輸方向中傳輸301實質上垂直配置之大面積基板、以漫射光照亮302實質上垂直配置的大面積基板、及量測303實質上垂直配置的大面積基板之至少一光學性質。 In Fig. 10, an embodiment of a method for measuring at least one optical property of a substantially vertically disposed large area substrate in accordance with embodiments described herein is illustrated. According to an embodiment of a method for measuring at least one optical property of a substantially large-area substrate that is substantially vertically disposed, the method includes: modulating a large-area substrate disposed substantially vertically with respect to the transmission direction 301 in the transmission direction At least one optical property of the large-area substrate that is substantially vertically disposed and the large-area substrate that is substantially vertically disposed.
根據用於量測實質上垂直配置之大面積基板之至少一光學性質之方法的實施例，相對於量測配置傳輸301實質上垂直配置之大面積基板包括：以至少1m/min之傳輸速度相對於量測配置移動實質上垂直配置之大面積基板，特別是至少20m/min之傳輸速度、更特別是至少35m/min，例如是50m/min，此實施例可結合此處所述之方法的其他實施例。 According to an embodiment of a method for measuring at least one optical property of a substantially vertically disposed large-area substrate, the large-area substrate disposed substantially perpendicular to the measurement configuration transmission 301 comprises: at a transmission speed of at least 1 m/min The measurement configuration moves a substantially large-area substrate of substantially vertical configuration, in particular a transmission speed of at least 20 m/min, more particularly at least 35 m/min, for example 50 m/min, this embodiment can be combined with the method described herein Other embodiments.
根據用於量測實質上垂直配置之大面積基板之至少一光學性質之方法的實施例，此處所述之傳輸系統係應用於傳輸實質上垂直配置之大面積基板，此實施例可結合此處所述之方法的其他實施例。 In accordance with an embodiment of a method for measuring at least one optical property of a substantially vertically disposed large area substrate, the transmission system described herein is for transmitting a large area substrate that is substantially vertically disposed, this embodiment may be incorporated Other embodiments of the method described.
根據用於量測實質上垂直配置之大面積基板之至少一光學性質的之方法實施例，此處所述之發光裝置係應用於以漫射光照亮302實質上垂直配置的大面積基板，此實施例可結合此 處所述之方法的其他實施例。 In accordance with a method embodiment for measuring at least one optical property of a substantially vertically disposed large area substrate, the illumination device described herein is applied to a large area substrate that is substantially vertically disposed in a diffuse illumination 302. Embodiments can be combined with this Other embodiments of the method described.
根據用於量測實質上垂直配置之大面積基板之至少一光學性質之方法的實施例，量測303實質上垂直配置的大面積基板之該至少一光學性質可在相對於量測配置傳輸實質上垂直配置之大面積基板之期間執行，此實施例可結合此處所述之方法的其他實施例。量測實質上垂直配置的大面積基板之至少一光學性質可在選擇之時間區段執行或連續地執行。 According to an embodiment of a method for measuring at least one optical property of a substantially vertically disposed large-area substrate, the at least one optical property of the substantially large-area substrate that is measured substantially vertically may be transmitted substantially relative to the measurement configuration Executed during the vertical configuration of the large area substrate, this embodiment can incorporate other embodiments of the methods described herein. Measuring at least one optical property of the substantially planarly disposed large area substrate can be performed or continuously performed at selected time segments.
根據用於量測實質上垂直配置之大面積基板之至少一光學性質之方法的實施例，量測303實質上垂直配置的大面積基板之該至少一光學性質可包括使用此處所述之量測配置200，此實施例可結合此處所述之方法的其他實施例。 According to an embodiment of a method for measuring at least one optical property of a substantially vertically disposed large-area substrate, measuring the at least one optical property of the substantially-area substantially large-area substrate may include using the amount described herein Measure configuration 200, this embodiment can incorporate other embodiments of the methods described herein.
根據用於量測實質上垂直配置之大面積基板之至少一光學性質之方法的實施例，量測303實質上垂直配置的大面積基板之該至少一光學性質包括移動該至少一光學量測裝置垂直於垂直配置之大面積基板之傳輸方向。 According to an embodiment of a method for measuring at least one optical property of a substantially vertically disposed large-area substrate, measuring the at least one optical property of the substantially-area substantially large-area substrate comprises moving the at least one optical measuring device The direction of transmission of a large area substrate perpendicular to the vertical configuration.
根據此處所述數個實施例，用於量測實質上垂直配置之大面積基板之至少一光學性質的方法可藉由電腦程式、軟體、電腦軟體產品及相互有關係之數個控制器來執行，相互有關係之數個控制器可具有中央處理器(CPU)、記憶體、使用者介面、及輸入及輸出手段，輸入及輸出手段係與用於處理大面積基板之設備的對應元件進行通訊。 According to several embodiments described herein, a method for measuring at least one optical property of a substantially large-area substrate of a substantially vertical configuration can be performed by a computer program, a software, a computer software product, and a plurality of controllers related to each other. Executing, a plurality of controllers having a relationship may have a central processing unit (CPU), a memory, a user interface, and input and output means, and the input and output means are performed with corresponding components of a device for processing a large-area substrate. communication.
綜上所述，雖然本發明已以較佳實施例揭露如上， 然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In summary, although the invention has been disclosed above in the preferred embodiments, It is not intended to limit the invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
100‧‧‧設備 100‧‧‧ Equipment
110‧‧‧腔體配置 110‧‧‧ cavity configuration
112‧‧‧出口埠 112‧‧‧Export
120‧‧‧大面積基板 120‧‧‧ Large area substrate
131‧‧‧傳輸載件 131‧‧‧Transport carrier
200‧‧‧量測配置 200‧‧‧Measurement configuration
210‧‧‧光學量測裝置 210‧‧‧Optical measuring device
220‧‧‧光擋 220‧‧‧Light block
222‧‧‧線 222‧‧‧ line
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| US20190242011A1 (en) * | 2016-07-01 | 2019-08-08 | Reiner Gertmann | Processing system, method for processing a flexible substrate, and deposition apparatus |
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| DE2757196C3 (en) * | 1977-12-22 | 1981-11-26 | Vladimir Dr.-Ing. 5100 Aachen Blazek | Photometric arrangement |
| DE19528855A1 (en) * | 1995-08-05 | 1997-02-06 | Leybold Ag | Method and device for spectral reflectance and transmission measurement |
| US6583879B1 (en) * | 2002-01-11 | 2003-06-24 | X-Rite, Incorporated | Benchtop spectrophotometer with improved targeting |
| US7142295B2 (en) * | 2003-03-05 | 2006-11-28 | Corning Incorporated | Inspection of transparent substrates for defects |
| US7073834B2 (en) * | 2004-06-25 | 2006-07-11 | Applied Materials, Inc. | Multiple section end effector assembly |
| US7432201B2 (en) * | 2005-07-19 | 2008-10-07 | Applied Materials, Inc. | Hybrid PVD-CVD system |
| TWI339730B (en) * | 2006-05-31 | 2011-04-01 | Applied Materials Inc | Prober for electronic device testing on large area substrates |
| US20080003091A1 (en) * | 2006-06-22 | 2008-01-03 | Bonora Anthony C | Method and apparatus for transporting, queuing, and loading of large area substrates in multi-tool processing operations |
| US8144330B2 (en) * | 2006-09-08 | 2012-03-27 | Dai Nippon Printing Co., Ltd. | Evaluation method of fouling, fouling evaluation apparatus, production method of optical member, optical layered body, and display product |
| KR20080085646A (en) * | 2007-03-19 | 2008-09-24 | 에프엔에스테크 주식회사 | Substrate transfering apparatus |
| KR101275731B1 (en) * | 2007-03-28 | 2013-06-14 | 엘지디스플레이 주식회사 | Inspecting apparatus for glass substrate |
| US20080251019A1 (en) * | 2007-04-12 | 2008-10-16 | Sriram Krishnaswami | System and method for transferring a substrate into and out of a reduced volume chamber accommodating multiple substrates |
| DE102009040642B3 (en) * | 2009-09-09 | 2011-03-10 | Von Ardenne Anlagentechnik Gmbh | Method and device for measuring optical characteristics of transparent, scattering measuring objects |
| CN102668031A (en) * | 2009-10-28 | 2012-09-12 | 应用材料公司 | Chamber for PECVD |
| TWI497055B (en) * | 2010-07-30 | 2015-08-21 | Hoya Corp | Transmittance measuring apparatus, photomask transmittance inspection apparatus, transmittance inspection method, photomask manufacturing method, pattern transfer method, photomask product |
| DE102011077290A1 (en) * | 2011-06-09 | 2012-12-13 | Carl Zeiss Microimaging Gmbh | Measuring method and measuring device for determining transmission and / or reflection properties |
| DE102011050969A1 (en) * | 2011-06-09 | 2013-05-16 | Carl Zeiss Microscopy Gmbh | Apparatus for referenced measurement of reflected light and method for calibrating such a device |
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