TW201508848A - 一種植球裝置及其植球方法 - Google Patents

一種植球裝置及其植球方法 Download PDF

Info

Publication number
TW201508848A
TW201508848A TW102130157A TW102130157A TW201508848A TW 201508848 A TW201508848 A TW 201508848A TW 102130157 A TW102130157 A TW 102130157A TW 102130157 A TW102130157 A TW 102130157A TW 201508848 A TW201508848 A TW 201508848A
Authority
TW
Taiwan
Prior art keywords
ball
substrate
layer
dielectric layer
solder paste
Prior art date
Application number
TW102130157A
Other languages
English (en)
Inventor
Tsung-Jen Liao
Original Assignee
Chipmos Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chipmos Technologies Inc filed Critical Chipmos Technologies Inc
Priority to TW102130157A priority Critical patent/TW201508848A/zh
Priority to CN201310686767.XA priority patent/CN104425294A/zh
Priority to US14/285,595 priority patent/US20150053752A1/en
Publication of TW201508848A publication Critical patent/TW201508848A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/06—Solder feeding devices; Solder melting pans
    • B23K3/0607—Solder feeding devices
    • B23K3/0638—Solder feeding devices for viscous material feeding, e.g. solder paste feeding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/11003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the bump preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/111—Manufacture and pre-treatment of the bump connector preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/11334—Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1182—Applying permanent coating, e.g. in-situ coating
    • H01L2224/11822—Applying permanent coating, e.g. in-situ coating by dipping, e.g. in a solder bath
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/11848—Thermal treatments, e.g. annealing, controlled cooling
    • H01L2224/11849—Reflowing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13075—Plural core members
    • H01L2224/1308—Plural core members being stacked
    • H01L2224/13082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13172—Vanadium [V] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

本揭露提供一種植球裝置及其植球方法，植球裝置包含一基板、一介電層以及一錫膏。該基板包含一表面。該介電層設置於該表面上，其中該介電層包含複數個孔洞。該錫膏填充於該些孔洞，其中該錫膏之一頂面與該介電層之一暴露面齊平。

Description

一種植球裝置及其植球方法
本揭露涉及一種植球裝置，更具體地說，涉及一種無需運用植球機之植球裝置及其植球方法。
目前的植錫球的製程皆需要植球機及昂貴的植球板(ball mount stencil)。由於植球板的孔洞尺寸及孔洞的間距無法因應不同的需求而彈性調整，因為植球板的製造時間約需要約兩個月。有時候在植球過程中，常發現有錫球阻塞於植球板孔洞的現象。另外，植球板與晶圓分離時，也會有錫球掉落的問題。再者，目前的植球板皆無法應用於銅柱製程的晶圓。由於植球板的材質為金屬(通常係鋼)，常常會有金屬疲乏而造成彎曲的現象發生。
本揭露提供一種植球裝置，其包含一基板、一介電層以及一錫膏。該基板包含一表面。該介電層設置於該表面上，且該介電層 包含複數個孔洞。該錫膏填充於該些孔洞中，且該錫膏之一頂面與該介電層之一暴露面齊平。
本揭露亦提供一種植球方法，包含下列步驟：提供一基板；設置一介電層於該基板之一表面上；曝光顯影該介電層而形成複數個孔洞於該介電層；塗布一錫膏於該些孔洞內，其中該錫膏之一頂面與該介電層之一暴露面齊平；提供一晶圓層，其中至少一球下冶金層或至少一金屬柱設置於該晶圓層之一連接面上；迴焊該晶圓層及該基板而使該錫膏連接於該至少一球下冶金層或該至少一金屬柱上；去除該介電層；以及迴焊該設置於該至少一球下冶金層或該至少一金屬柱上之該錫膏而形成錫球。
本揭露之其他目的，部分將在後續說明中陳述，而部分可由內容說明中輕易得知，或可由本揭露之實施而得知。本揭露之各方面將可利用後附之申請專利範圍中所特別指出之元件及組合而理解並達成。需了解，先述的一般說明及下列詳細說明均僅作舉例之用，並非用以限制本揭露。
10‧‧‧基板
11‧‧‧表面
20‧‧‧介電層
21‧‧‧孔洞
22‧‧‧暴露面
30‧‧‧錫膏
31‧‧‧頂面
32‧‧‧錫球
40‧‧‧晶圓層
41‧‧‧球下冶金層
42‧‧‧金屬柱
43‧‧‧連接面
100‧‧‧植球裝置
N‧‧‧法線方向
W‧‧‧預設寬度
下列圖示係併入說明書內容之一部分，以供闡述本揭露之各種實施例，進而清楚解釋本揭露之技術原理。
當併同各隨附圖式而閱覽時，即可更佳瞭解本揭露之前揭摘要以及上文詳細說明。為達本揭露之說明目的，各圖式裏圖繪有現屬較佳之各具體實施例。然應瞭解本揭露並不限於所繪之精確排置方式及設備裝置。
為了使本揭露之敘述更加詳盡與完備，可參照下列描述並配合下列圖式，其中類似的元件符號代表類似的元件。然以下實施例中所述，僅用以說明本揭露，並非用以限制本揭露的範圍。
圖1為根據本揭露之一實施例之基板及其表面之示意圖；圖2為根據本揭露之一實施例之介電層設置於基板表面上之示意圖；圖3為根據本揭露之一實施例之球下冶金層之示意圖；圖4為根據本揭露之一實施例之曝光顯影於基板上之介電層之示意圖；圖5為根據本揭露之一實施例之塗布錫膏於介電層之孔洞之示意圖；圖6為根據本揭露之一實施例之對齊該些孔洞於該至少一球下冶金層之示意圖；圖7為根據本揭露之一實施例之迴焊該至少一球下冶金層而形成錫球之示意圖；圖8為根據本揭露之一實施例之包含金屬柱之晶圓層之示意圖；圖9為根據本揭露之一實施例之對齊該些孔洞於該至少一金屬柱之示意圖；以及 圖10為根據本揭露之一實施例之迴焊該至少一金屬柱而形成錫球之示意圖。
在下文中本揭露的實施例係配合所附圖式以闡述細節。以下舉一些實施例做為本揭露的描述，但是本揭露不受限於所舉的一些實施例。又，所舉的多個實施例之間有可以相互適當結合，達成另一些實施例。
本揭露之植球方法包含許多步驟。如圖1所示，提供一基板10。在此實施例中，基板10包含一表面11。在此實施例中，基板10可為玻璃基板。由於基板10為玻璃基板，因此可避免基板10因金屬疲乏而造成彎曲的現象發生。此外，玻璃基板的尺寸容易裁切，因此可以因應不同的需求而彈性調整，而可縮短基板10的製造時間。另，玻璃基板較一金屬植球板的費用明顯較低，是故本揭露可達成減少生產費用的結果。
如圖2所示，介電層20設置於表面11上。在此說明書及申請專利範圍中的名詞「上」包含第一物件直接或間接地設置於第二物件的上方。例如，介電層20設置於表面11上就包含，介電層20「直接」設置於表面11上及介電層20「間接」設置於表面11上，兩種意義。此處的「間接」係指兩個物件在某一方位的垂直方向中具有上與下的關係，且兩者中間仍有其他物體、物質或間隔將兩者隔開。
如圖3所示，提供一晶圓層40，至少一球下冶金層41設置於晶圓層40之一連接面43上。
如圖4所示，曝光顯影介電層20而形成複數個孔洞21於介電層20內。
如圖5所示，塗布一錫膏30於該些孔洞21內，錫膏30填充於孔洞21內。換言之，錫膏30並無殘留於介電層20的暴露面22上。由於錫膏30與介電層20的暴露面22齊平，因此錫膏30之一頂面31與介電層21之暴露面22齊平。
在此實施例中，孔洞21貫穿介電層20，因此錫膏30容置於孔洞21內時，錫膏30接觸基板10之表面11。然而，在其他實施例(圖未示)中，孔洞21亦可設計為不貫穿介電層20，是故錫膏30則無法接觸基板10之表面11。
如圖5所示之實施例中，植球裝置100包含基板10、介電層20及錫膏30。基板10的平面則形成一與平面垂直的法線方向N。錫膏30之頂面31沿垂直於基板10之法線方向N之一方向具有預設寬度W。傳統的植球板內的孔洞尺寸(例如270μm)一定要大於錫球尺寸(例如250μm)，才能使錫球經由植球板內的孔洞(圖未示)而接合於連接處(例如220μm之球下冶金層)。因此，傳統方法無法將錫球尺寸設計成小於或等於與連接處尺寸。相較之下，在圖5之實施例中，預設寬度W約大於球下冶金層41，但在其他實施例(圖未示)中，預設寬度W可小於球下冶金層41寬度的二分之一或等於球下冶金層41的寬度。
如圖5所示，由於錫膏30係填充於孔洞21內，因此預設寬度W係由孔洞21的寬度而決定。因為孔洞21的寬度係由曝光顯影的步驟來決定，因此預設寬度W可由曝光顯影的時間及顯影的圖案來決定，並可根據球下冶金層41寬度而調整。是故， 上述圖4之曝光顯影步驟可進一步包含形成沿垂直於基板10之法線方向N之一方向具有一預設寬度W之孔洞21的步驟，進而使頂面31具有預設寬度W。由於預設寬度W可由曝光顯影步驟所決定，因此可依據不同的設計需求而調整，因此不會發生錫球阻塞於植球板孔洞的現象。
如圖6所示，晶圓層40與植球裝置100之基板10相互對齊。換言之，基板10上之孔洞21對齊於至少一球下冶金層41。
如圖7所示，迴焊晶圓層40及基板10，進而使錫膏30連接於至少一球下冶金層41上。在此實施例中，迴焊步驟進一步包含接合晶圓層40及基板10之步驟，而使晶圓層40上之至少一球下冶金層41接觸錫膏30。
如圖7所示，介電層20被去除的步驟可另包含剝離晶圓層40及基板10之步驟。最後迴焊設置於至少一球下冶金層41上之錫膏30而形成錫球32，如圖7所示。此外，由於介電層20去除的方式可採用化學溶劑去除介電層20，此種方式為化學處理方式並非傳統機械力卸除方式，是故當基板10與晶圓層40分離時，錫球掉落的問題幾乎不會發生。
如圖8所示，再另一實施例中，至少一金屬柱42設置於晶圓層40之連接面43上。其他先前的步驟已如圖1及圖2的步驟所述，其中，前述之金屬柱42之材質可為銅、銀、鎳、鋁、鈦、鎳釩或其合金等。
如圖9所示，對齊至少一金屬柱42於孔洞21內之錫膏30，進而接合晶圓層40及基板10。此時，至少一金屬柱42接觸錫膏30。在此實施例中，錫膏30沿垂直於基板10之法線方向N之一 方向具有預設寬度W(參照圖5)。圖9所示之實施例中，預設寬度W大於金屬柱42的直徑，但在其他實施例(圖未示)中，錫膏30之預設寬度W可等於金屬柱42的直徑。
如圖10所示，經由迴焊至少一金屬柱42上之錫膏30而形成錫球32。是故，藉由本揭露之方法及裝置，無須植球機即可將錫球應用於金屬柱製程的晶圓上。
本發明之技術內容及技術特點已揭示如上，然而本發明所屬技術領域中具有通常知識者應瞭解，在不背離後附申請專利範圍所界定之本發明精神和範圍內，本發明之教示及揭示可作種種之替換及修飾。例如，上文揭示之許多裝置或結構可以不同之方法實施或以其它結構予以取代，或者採用上述二種方式之組合。
此外，本案之權利範圍並不侷限於上文揭示之特定實施例的製程、機台、製造、物質之成份、裝置、方法或步驟。本發明所屬技術領域中具有通常知識者應瞭解，基於本發明教示及揭示製程、機台、製造、物質之成份、裝置、方法或步驟，無論現在已存在或日後開發者，其與本案實施例揭示者係以實質相同的方式執行實質相同的功能，而達到實質相同的結果，亦可使用於本發明。因此，以下之申請專利範圍係用以涵蓋用以此類製程、機台、製造、物質之成份、裝置、方法或步驟。
32‧‧‧錫球
40‧‧‧晶圓層
41‧‧‧球下冶金層
43‧‧‧連接面

Claims (10)

  1. 一種植球裝置，包含：一基板，包含一表面；一介電層，設置於該表面上，其中該介電層包含複數個孔洞；以及一錫膏，填充於該些孔洞，其中該錫膏之一頂面與該介電層之一暴露面齊平。
  2. 根據請求項1所述之植球裝置，其中該錫膏接觸該表面。
  3. 根據請求項1所述之植球裝置，其中該頂面沿垂直於該基板的法線方向之一方向具有一預設寬度。
  4. 根據請求項1所述之植球裝置，其中該基板為玻璃基板。
  5. 一種植球方法，包含：提供一基板；設置一介電層於一表面上；曝光顯影該介電層而形成複數個孔洞於該介電層；塗布一錫膏於該些孔洞，其中該錫膏之一頂面與該介電層之一暴露面齊平；提供一晶圓層，其中至少一球下冶金層或至少一金屬柱設置於該晶圓層之一連接面上；迴焊該晶圓層及該基板而使該錫膏連接於該至少一球下冶金層或該至少一金屬柱上；去除該介電層；以及迴焊該設置於該至少一球下冶金層或該至少一金屬柱上之 該錫膏而形成錫球。
  6. 根據請求項5所述之植球方法，其中該迴焊步驟進一步包含接合晶圓層及該基板之步驟，而使該晶圓層上之該至少一球下冶金層或該至少一金屬柱接觸該錫膏。
  7. 根據請求項5所述之植球方法，其中該曝光顯影步驟進一步包含形成沿垂直於該基板的法線方向之一方向具有一預設寬度的該孔洞之步驟，而使該頂面具有該預設寬度。
  8. 根據請求項5所述之植球方法，其中該基板為玻璃基板。
  9. 根據請求項5所述之植球方法，其中該晶圓層提供步驟進一步包含對齊該些孔洞於該至少一球下冶金層或該至少一金屬柱之步驟。
  10. 根據請求項5所述之植球方法，其中該介電層去除步驟進一步包含剝離該晶圓層及該基板之步驟。
TW102130157A 2013-08-23 2013-08-23 一種植球裝置及其植球方法 TW201508848A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW102130157A TW201508848A (zh) 2013-08-23 2013-08-23 一種植球裝置及其植球方法
CN201310686767.XA CN104425294A (zh) 2013-08-23 2013-12-12 一种植球装置及其植球方法
US14/285,595 US20150053752A1 (en) 2013-08-23 2014-05-22 Ball planting device and ball planting method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW102130157A TW201508848A (zh) 2013-08-23 2013-08-23 一種植球裝置及其植球方法

Publications (1)

Publication Number Publication Date
TW201508848A true TW201508848A (zh) 2015-03-01

Family

ID=52479472

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102130157A TW201508848A (zh) 2013-08-23 2013-08-23 一種植球裝置及其植球方法

Country Status (3)

Country Link
US (1) US20150053752A1 (zh)
CN (1) CN104425294A (zh)
TW (1) TW201508848A (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3563377A1 (en) * 2016-12-27 2019-11-06 Everspin Technologies, Inc. Data storage in synthetic antiferromagnets included in magnetic tunnel junctions
CN109148306A (zh) * 2018-09-04 2019-01-04 深圳市诚朗科技有限公司 一种球栅阵列封装元器件的返修工艺
CN111883502B (zh) * 2020-08-03 2022-07-01 中国电子科技集团公司第三十八研究所 焊料微凸点阵列制备方法
CN116936383B (zh) * 2023-08-02 2024-03-01 江苏弘琪工业自动化有限公司 一种定位精度高的全自动植球装置及其使用方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5024372A (en) * 1989-01-03 1991-06-18 Motorola, Inc. Method of making high density solder bumps and a substrate socket for high density solder bumps
US5643831A (en) * 1994-01-20 1997-07-01 Fujitsu Limited Process for forming solder balls on a plate having apertures using solder paste and transferring the solder balls to semiconductor device
US6528346B2 (en) * 1994-01-20 2003-03-04 Fujitsu Limited Bump-forming method using two plates and electronic device
US6271110B1 (en) * 1994-01-20 2001-08-07 Fujitsu Limited Bump-forming method using two plates and electronic device
US6025258A (en) * 1994-01-20 2000-02-15 Fujitsu Limited Method for fabricating solder bumps by forming solder balls with a solder ball forming member
US5607099A (en) * 1995-04-24 1997-03-04 Delco Electronics Corporation Solder bump transfer device for flip chip integrated circuit devices
TW336371B (en) * 1995-07-13 1998-07-11 Motorola Inc Method for forming bumps on a substrate the invention relates to a method for forming bumps on a substrate
JP3385872B2 (ja) * 1995-12-25 2003-03-10 三菱電機株式会社 はんだ供給法およびはんだ供給装置
US5775569A (en) * 1996-10-31 1998-07-07 Ibm Corporation Method for building interconnect structures by injection molded solder and structures built
JPH10163211A (ja) * 1996-12-02 1998-06-19 Fujitsu Ltd バンプ形成用板部材の製造方法及びバンプ形成方法
US6293456B1 (en) * 1997-05-27 2001-09-25 Spheretek, Llc Methods for forming solder balls on substrates
KR20010023027A (ko) * 1997-08-19 2001-03-26 가나이 쓰토무 범프 전극 형성 방법 및 반도체 장치 제조 방법
US6003757A (en) * 1998-04-30 1999-12-21 International Business Machines Corporation Apparatus for transferring solder bumps and method of using
JP3239335B2 (ja) * 1999-08-18 2001-12-17 インターナショナル・ビジネス・マシーンズ・コーポレーション 電気的接続用構造体の形成方法およびはんだ転写用基板
US6295730B1 (en) * 1999-09-02 2001-10-02 Micron Technology, Inc. Method and apparatus for forming metal contacts on a substrate

Also Published As

Publication number Publication date
CN104425294A (zh) 2015-03-18
US20150053752A1 (en) 2015-02-26

Similar Documents

Publication Publication Date Title
US8299368B2 (en) Interconnection element for electric circuits
CN106711125B (zh) 半导体封装及其制造方法
US9263839B2 (en) System and method for an improved fine pitch joint
TWI584430B (zh) 半導體封裝件及其製法
TW201508848A (zh) 一種植球裝置及其植球方法
JP2017522741A (ja) フリップチップ基板に小間隔で高いはんだボールバンプを形成する製作方法
TWI550791B (zh) 半導體封裝件及其製法
CN105633055B (zh) 半导体封装结构的制法
JP6007796B2 (ja) 回路基板の製造方法
JP2009004454A (ja) 電極構造体及びその形成方法と電子部品及び実装基板
JP2011171427A (ja) 積層型半導体装置
KR20060130107A (ko) 웨이퍼 레벨-칩 스케일 패키지를 위한 다양한 구조/높이의범프
TWI548049B (zh) 半導體結構及其製法
KR20130116643A (ko) 범프를 갖는 기판, 반도체칩, 및 반도체 패키지와, 그 제조방법
TWI569386B (zh) 結構與方法
TWI623984B (zh) 封裝結構及其製法
JP2018006465A (ja) プリント配線板の製造方法、及びスクリーン印刷用マスク
TW201803064A (zh) 用於高密度互連架構之表面修整層
US20080251945A1 (en) Semiconductor package that has electronic component and its fabrication method
JP2015220291A (ja) 半導体装置及びその製造方法
JP2019062000A (ja) スクリーン印刷用マスク、及びプリント配線基板
TWI473216B (zh) 半導體製程及其半導體結構
TWI642133B (zh) 電子構件之置放製程及其應用之承載治具
US8604356B1 (en) Electronic assembly having increased standoff height
JP4899962B2 (ja) 電子デバイスの接続方法