TW201501222A - Method for manufacturing semiconductor chip - Google Patents
Method for manufacturing semiconductor chip Download PDFInfo
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- TW201501222A TW201501222A TW103105230A TW103105230A TW201501222A TW 201501222 A TW201501222 A TW 201501222A TW 103105230 A TW103105230 A TW 103105230A TW 103105230 A TW103105230 A TW 103105230A TW 201501222 A TW201501222 A TW 201501222A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
Abstract
Description
本發明，係關於半導體晶片之製造方法，更詳細的來說，係使關於藉由雷射光而在晶圓內部形成改質領域層而將晶圓個片化(晶片化)之切割法，和採用倒晶封裝之實裝製程連續進行為可能，對於製程之簡易化與製品品質的提升有所貢獻之半導體晶片之製造方法。 The present invention relates to a method of manufacturing a semiconductor wafer, and more particularly to a method of forming a wafer by chip formation (wafer formation) by forming a modified domain layer inside a wafer by laser light, and A manufacturing method of a semiconductor wafer that contributes to the simplification of the process and the improvement of the quality of the product by the continuous mounting process of the flip chip package.
近年來，使用被稱為所謂面朝下(face down)方式之實裝法之半導體裝置的製造被進行。在面朝下方式中，回路面上具有凸塊等電極之半導體晶片(以下，有僅記載成「晶片」之情況)被使用，該電極係與基板接合。 In recent years, the manufacture of a semiconductor device using a mounting method called a face down method has been carried out. In the face-down mode, a semiconductor wafer having an electrode such as a bump on the circuit surface (hereinafter, simply referred to as a "wafer") is used, and the electrode is bonded to the substrate.
半導體晶片係藉由將半導體晶圓個片化而得到，對於設置於晶片的回路面之電極與基板的接合，黏晶用接著薄膜(以下，有僅記載成「接著薄膜」之情況)。 The semiconductor wafer is obtained by singulating a semiconductor wafer, and bonding the electrode provided on the circuit surface of the wafer to the substrate, and the adhesive film for bonding (hereinafter, simply referred to as "adhesive film").
在專利文獻1(日本專利特開2008-98427號公報)中，記載了：在晶圓的回路面上層積黏晶用接著薄膜，將該接著薄膜完全切斷，且在接著薄膜與晶圓之層積體上，從晶圓表面形成較該晶圓厚度還淺之切痕深度的溝後，在該接著薄膜表面貼附保護薄片，藉由進行晶圓的反面研磨而將晶圓個片化之方法。 In the patent document 1 (JP-A-2008-98427), it is described that a bonding film for a die bond is laminated on a circuit surface of a wafer, and the bonding film is completely cut, and then the film and the wafer are bonded. On the laminate, after forming a groove having a shallow depth of the wafer from the surface of the wafer, a protective sheet is attached to the surface of the bonding film, and the wafer is sliced by performing reverse polishing of the wafer. The method.
然而，在採用專利文獻1之方法的情況，雖然藉由迴轉刀片形成溝，但由於露出之接著薄膜與晶圓被切入，因此有接著薄膜被切削水汙染的問題。使接著薄膜不露出而設置成為遮罩的薄片雖也被考量，但該薄片在溝形成時也會被同時切斷，因此會成為在切入時的障礙，且變得不得不除去被切斷成與晶片同形狀之薄片，因此不是很有效率。又，有切削水侵入溝，晶片被汙染的情況。 However, in the case of the method of Patent Document 1, although the groove is formed by the rotary blade, since the exposed film and the wafer are cut, there is a problem that the film is contaminated by the cutting water. Although the sheet which is provided as a mask without exposing the film to the film is also considered, the sheet is also cut at the same time when the groove is formed, so that it becomes an obstacle at the time of cutting, and it becomes necessary to remove and cut into A sheet of the same shape as the wafer is therefore not very efficient. Further, there is a case where the cutting water penetrates into the groove and the wafer is contaminated.
【專利文獻1】日本專利特開第2008-98427號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2008-98427
因此，本發明係有鑒於上述情況而做成。亦即，本發明係以提供可防止晶片以及接著薄膜之汙染，而可以簡便的方法得到具有接著薄膜之半導體晶片之半導體晶片的製造方法為目的。 Therefore, the present invention has been made in view of the above circumstances. That is, the present invention has an object of providing a method for producing a semiconductor wafer having a semiconductor wafer with a film which can be easily obtained by a method capable of preventing contamination of a wafer and a film.
本發明，係包含以下要旨。 The present invention includes the following gist.
[1]一種半導體晶片之製造方法，包含：(a)將黏晶用接著薄膜貼附於在表面形成了回路之半導體晶圓的回路面之工程；(b)層積黏晶用接著薄膜與表面保護薄片之工程；(c)研磨半導體晶圓的反面，將晶圓每個回路個片化，而得到分割後的一群的晶片之工程；(d)藉由將表面保護薄片擴張，將黏晶用接著薄膜個 片化成各晶片，而得到在回路面具有黏晶用接著薄膜之晶片的工程；以及(e)從晶圓反面側照入雷射光，而在晶圓上形成將各回路區劃之改良領域層之工程，依照從前述(a)工程至(d)工程的順序進行，或是依照(b)工程、(a)工程、(c)工程、(d)工程的順序進行，在(c)工程之前進行前述(e)工程，而在(c)工程中以改質領域層為起點將晶圓每個回路個片化。 [1] A method of manufacturing a semiconductor wafer, comprising: (a) attaching a die attach film to a circuit surface of a semiconductor wafer having a circuit formed on a surface; (b) laminating a bonding film and a bonding film; (c) grinding the reverse side of the semiconductor wafer, singulating each circuit of the wafer, and obtaining the work of the segmented wafer; (d) by expanding the surface protective sheet, the adhesive Crystal with film Forming each wafer to obtain a wafer having a wafer for bonding die on the circuit surface; and (e) illuminating the laser light from the opposite side of the wafer, and forming an improved domain layer on each surface of the wafer The works shall be carried out in the order of (a) engineering to (d) engineering, or in the order of (b) engineering, (a) engineering, (c) engineering, (d) engineering, before (c) engineering The above (e) project is carried out, and in the (c) project, each circuit of the wafer is sliced starting from the modified domain layer.
[2]一種半導體晶片之製造方法，包含：(a)將黏晶用接著薄膜貼附於在表面形成了回路之半導體晶圓的回路面之工程；(b)層積黏晶用接著薄膜與表面保護薄片之工程；(c)研磨半導體晶圓的反面，將晶圓每個回路個片化，而得到分割後的一群的晶片之工程；(f)在分割成一群的晶片反面貼附黏著薄片的工程；(g)剝離表面保護薄片，而得到具有黏晶用接著薄膜之一群的晶片之工程；(d)藉由將黏著薄片擴張，將黏晶用接著薄膜個片化成各晶片，而得到在回路面具有黏晶用接著薄膜之晶片的工程；以及(e)從晶圓反面側照入雷射光，而在晶圓上形成將各回路區劃之改良領域層之工程，依照從(a)工程、(b)工程、(c)工程、(f)工程、(g)工程以及(d)工程的順序進行，或是依照(b)工程、(a)工程、(c)工程、(f)工程、(g)工程以及(d)工程的順序進行，在(c)工程之前進行前述(e)工程，而在(c)工程中以改質領域層為起點將晶圓每個回路個片化。 [2] A method of manufacturing a semiconductor wafer, comprising: (a) attaching a die attach film to a circuit surface of a semiconductor wafer having a circuit formed on a surface; (b) laminating a bonding film with a bonding film and (c) polishing the reverse side of the semiconductor wafer, singulating each circuit of the wafer to obtain the work of the segmented wafer; (f) attaching the adhesive to the opposite side of the wafer (g) peeling off the surface protective sheet to obtain a wafer having a wafer of a film for the bonding film; (d) by expanding the adhesive sheet, the bonded crystal is formed into individual wafers by using a subsequent film. Obtaining a process of a wafer having a die-bonding film on the circuit side; and (e) illuminating the laser beam from the opposite side of the wafer, and forming an improved domain layer on each side of the wafer, according to (a) ) engineering, (b) engineering, (c) engineering, (f) engineering, (g) engineering, and (d) engineering in the order of, or in accordance with (b) engineering, (a) engineering, (c) engineering, ( f) engineering, (g) engineering, and (d) engineering sequence, before (c) engineering (e) engineering And (c), to project the modified layer art starting wafer into individual pieces each loop.
[3]一種半導體晶片之製造方法，包含：(a’)將黏晶用接著薄膜貼附於在表面形成了回路之半導體晶圓的回路面之工程；(b’)層積黏晶用接著薄膜與表面保護薄片之工程；(c’)研磨半導體晶圓的反面之工程；(d’)藉由將表面保護薄片擴 張，將黏晶用接著薄膜個片化成各晶片，而得到在回路面具有黏晶用接著薄膜之晶片的工程；以及(e’)從晶圓反面側照入雷射光，而在晶圓上形成將各回路區劃之改良領域層之工程，依照從前述(a’)工程至(d’)工程的順序進行，或是依照(b’)工程、(a’)工程、(c’)工程、(d’)工程的順序進行，前述(e’)工程係在(c’)工程之後，且(d’)工程之前進行。 [3] A method of manufacturing a semiconductor wafer, comprising: (a') attaching a die attach film to a circuit surface of a semiconductor wafer having a circuit formed on a surface; (b') laminating a die bond Engineering of film and surface protection sheet; (c') engineering of the reverse side of the semiconductor wafer; (d') by expanding the surface protection sheet Zhang, the die-bonding film is formed into individual wafers to obtain a wafer having a die-bonding film on the circuit surface; and (e') irradiating laser light from the opposite side of the wafer, and on the wafer The formation of the improvement domain layer that zoning each circuit is carried out in the order from (a') to (d'), or in accordance with (b'), (a'), (c') The (d') project is carried out in the order, and the above (e') engineering is performed after the (c') project and before the (d') project.
[4]一種半導體晶片之製造方法，包含：(a’)將黏晶用接著薄膜貼附於在表面形成了回路之半導體晶圓的回路面之工程；(b’)層積黏晶用接著薄膜與表面保護薄片之工程；(c’)研磨半導體晶圓的反面之工程(f’)在半導體晶圓反面貼附黏著薄片的工程；(g’)剝離表面保護薄片，而得到具有黏晶用接著薄膜之半導體晶圓之工程；(d’)藉由將黏著薄片擴張，將黏晶用接著薄膜個片化成各晶片，而得到在回路面具有黏晶用接著薄膜之晶片的工程；以及(e’)從晶圓反面側照入雷射光，而在晶圓上形成將各回路區劃之改良領域層之工程，依照從(a’)工程、(b’)工程、(c’)工程、(f’)工程、(g’)工程以及(d’)工程的順序進行，或是依照(b’)工程、(a’)工程、(c’)工程、(f’)工程、(g’)工程以及(d’)工程的順序進行，前述(e’)工程係在(c’)工程之後，且(d’)工程之前進行。 [4] A method of manufacturing a semiconductor wafer, comprising: (a') attaching a die attach film to a circuit surface of a semiconductor wafer having a circuit formed on a surface; (b') laminating a die bond Engineering of film and surface protective sheet; (c') engineering of the reverse side of the polished semiconductor wafer (f') attaching the adhesive sheet to the reverse side of the semiconductor wafer; (g') peeling off the surface protective sheet to obtain a bonded crystal Working with a semiconductor wafer followed by a film; (d') by expanding the adhesive sheet, and forming the adhesive film into individual wafers by using the adhesive film, thereby obtaining a wafer having a wafer for bonding the adhesive film on the circuit surface; (e') projecting laser light from the opposite side of the wafer, and forming a modified area layer for each circuit on the wafer, in accordance with (a') engineering, (b') engineering, (c') engineering , (f') engineering, (g') engineering, and (d') engineering in the order, or in accordance with (b') engineering, (a') engineering, (c') engineering, (f') engineering, ( g') engineering and (d') engineering sequence, the above (e') engineering is after (c') engineering, and (d') engineering Row.
若根據與本發明有關之第1半導體晶片之製造方法，可防止晶片以及接著薄膜的汙染，而可有效率地得到具有接著薄膜之半導體晶片。亦即，在藉由雷射光在晶圓內部形成改質領域層而使晶圓個片化(晶片化)之前，藉由先在回路面層 積接著薄膜，晶圓個片化後，藉由在既定條件之擴張工程，使接著薄膜個片化，來製造具有接著薄膜之半導體晶片，而可使接著薄膜不在露出的狀態暴露於切削水，因此可防止起因於切削水之晶片或接著薄膜的汙染，又，可提升具有接著薄膜之半導體晶片之製造效率。 According to the method for manufacturing a first semiconductor wafer according to the present invention, contamination of the wafer and the subsequent film can be prevented, and a semiconductor wafer having a bonding film can be efficiently obtained. That is, before the wafer is sliced (wafered) by forming a modified domain layer inside the wafer by laser light, by first in the loop surface layer After the film is formed, after the wafer is formed, the semiconductor film is formed by forming a film with the film by expanding the film under a predetermined condition, and the film can be exposed to the cutting water without being exposed. Therefore, contamination of the wafer or the film which is caused by the cutting water can be prevented, and the manufacturing efficiency of the semiconductor wafer having the film can be improved.
又，若根據與本發明有關之第2半導體晶片之製造方法，可防止晶片以及接著薄膜之汙染，而可有效率得得到具有接著薄膜之半導體晶片。亦即，在藉由雷射光在晶圓內部形成改質領域層而使晶圓個片化(晶片化)之前，藉由先在回路面層積接著薄膜，藉由在既定條件之擴張工程，使接著薄膜個片化，來製造具有接著薄膜之半導體晶片，而可使接著薄膜不在露出的狀態暴露於切削水，因此可防止起因於切削水之晶片或接著薄膜的汙染，又，可提升具有接著薄膜之半導體晶片之製造效率。 Moreover, according to the method for manufacturing a second semiconductor wafer according to the present invention, contamination of the wafer and the subsequent film can be prevented, and a semiconductor wafer having a bonding film can be efficiently obtained. That is, before the wafer is sliced (wafered) by forming a modified domain layer inside the wafer by laser light, by laminating the film on the circuit surface first, by expanding the project under predetermined conditions, The film is formed into a film to form a semiconductor wafer having a film, and the film can be exposed to the cutting water without being exposed. Therefore, contamination of the wafer caused by cutting water or the film can be prevented, and the film can be improved. The manufacturing efficiency of the semiconductor wafer of the film is then followed.
又，若根據本發明之半導體晶片之製造方法，在將回路面側置件於晶片搭載用基板或是其他晶片上之實裝技術中，可包含藉由雷射光在晶圓內部形成改質領域層而使晶圓個片化(晶片化)之方法而使連續的製程為可能。又，即使是高凸塊晶片的情況，也可藉由適當選擇接著薄膜的組成，而得到在晶片搭載用基板或其他晶片之間之充分的密著性，達成製品品質的提升。亦即，若藉由本發明之半導體晶片的製造方法，連續進行藉由雷射光在晶圓內部形成改質領域層而晶圓個片化(晶片化)之切割法，與採用倒晶封裝之製程為可能，提供可同時對製造製程的簡易化與製品品質提升有貢獻之半導體晶片製造方法。 Moreover, according to the semiconductor wafer manufacturing method of the present invention, in the mounting technology in which the circuit surface side is placed on the wafer mounting substrate or other wafer, the field of modification can be formed inside the wafer by laser light. A continuous process is possible by layering the wafers (wafering). Moreover, even in the case of a high-bump wafer, sufficient adhesion between the wafer-mounting substrate or another wafer can be obtained by appropriately selecting the composition of the subsequent film, and the quality of the product can be improved. That is, according to the method for fabricating a semiconductor wafer of the present invention, a dicing method of forming a wafer layer (wafer formation) by forming a modified domain layer inside the wafer by laser light, and a process using a flip chip package are continuously performed. As possible, a semiconductor wafer manufacturing method that contributes to the simplification of the manufacturing process and the improvement of the product quality is provided.
1‧‧‧半導體晶圓 1‧‧‧Semiconductor wafer
2‧‧‧凸塊 2‧‧‧Bumps
3‧‧‧接著薄膜 3‧‧‧Next film
4‧‧‧支持薄膜 4‧‧‧Support film
5‧‧‧環狀框架 5‧‧‧Ring frame
7‧‧‧表面保護薄片 7‧‧‧Surface protection sheet
10‧‧‧半導體晶片 10‧‧‧Semiconductor wafer
13‧‧‧黏著薄片 13‧‧‧Adhesive sheets
第1圖係表示與第1半導體晶片有關之製造方法的一工程。 Fig. 1 is a view showing a process of a manufacturing method relating to a first semiconductor wafer.
第2圖係表示與第1半導體晶片有關之製造方法的一工程。 Fig. 2 is a view showing a process of a manufacturing method related to the first semiconductor wafer.
第3圖係表示與第1半導體晶片有關之製造方法的一工程。 Fig. 3 is a view showing a process of a manufacturing method related to the first semiconductor wafer.
第4圖係表示與第1半導體晶片有關之製造方法的一工程。 Fig. 4 is a view showing a process of a manufacturing method related to the first semiconductor wafer.
第5圖係表示與第1半導體晶片有關之製造方法的一工程。 Fig. 5 is a view showing a process of a manufacturing method relating to the first semiconductor wafer.
第6圖係表示與第1半導體晶片有關之製造方法的一工程。 Fig. 6 is a view showing a process of a manufacturing method relating to the first semiconductor wafer.
第7圖係表示與第2半導體晶片有關之製造方法的一工程。 Fig. 7 is a view showing a process of a manufacturing method related to the second semiconductor wafer.
第8圖係表示與第2半導體晶片有關之製造方法的一工程。 Fig. 8 is a view showing a process of a manufacturing method relating to a second semiconductor wafer.
第9圖係表示與第2半導體晶片有關之製造方法的一工程。 Fig. 9 is a view showing a process of a manufacturing method relating to the second semiconductor wafer.
以下，一邊參照圖式，包含其最良形態，更具體地說明。 Hereinafter, the best mode will be described with reference to the drawings, and more specifically.
與本發明有關之第1半導體晶片之製造方法，係包含以下之(a)~(e)工程。 The method for producing a first semiconductor wafer according to the present invention includes the following (a) to (e) projects.
(a)將黏晶用接著薄膜貼附於在表面形成了回路之半導體晶圓的回路面之工程(參照第1圖)，(b)層積黏晶用接著薄膜與表面保護薄片之工程(參照第2圖)，(c)研磨半導體晶圓的反面，將晶圓每個回路個片化，而得到分割後的一群的晶片之工程(參照第3圖)，(d)藉由將表面保護薄片擴張，將接著薄膜個片化成各晶片，而得到在回路面具有接著薄膜之晶片的工程(參照第6圖)，以及(e)從晶圓反面側照入雷射光，而在晶圓上形成將各回路區劃之改良領域層之工程，依照從前述(a)工程至(d)工程的順序進行，或是依照(b)工程、(a)工程、(c)工程、(d)工程的順序進行，在(c)工程之前進行前述(e)工程，而在(c)工程中以改質領域層為起點將晶圓每個回路個片化之半導體晶片的製造方法。 (a) The process of attaching the adhesive film to the circuit surface of the semiconductor wafer on which the circuit is formed on the surface (see Fig. 1), (b) the engineering of the laminated film and the surface protective sheet for laminated microcrystals ( Referring to Fig. 2), (c) polishing the reverse side of the semiconductor wafer, and dicing each circuit of the wafer to obtain a process of dividing the group of wafers (see Fig. 3), (d) by surface The protective sheet is expanded, and then the film is formed into individual wafers to obtain a wafer having a film on the circuit surface (see FIG. 6), and (e) laser light is irradiated from the opposite side of the wafer, and the wafer is irradiated. The construction of the improved domain layer that defines each loop is performed in the order from (a) engineering to (d) engineering, or in accordance with (b) engineering, (a) engineering, (c) engineering, (d) The sequence of the project is carried out, and the (e) project is performed before (c) the project, and the method of manufacturing the semiconductor wafer in which each circuit of the wafer is sliced starting from the modified domain layer in the (c) project.
又，與本發明有關之第1半導體晶片之製造方法，除了(a)~(e)工程以外，還可以含有以下的(f)、(g)工程。與本發明有關之第1半導體晶片之製造方法，在含有(f)、(g)工程的情況，係依照(a)工程、(b)工程、(c)工程、(f)工程、(g)工程以及(d)工程之順序進行，又，依照(b)工程、(a)工程、(c)工程、(f)工程、(g)工程以及(d)工程之順序進行，(e)工程係在(c)工程之前進行。 Further, in the method of manufacturing the first semiconductor wafer according to the present invention, in addition to the (a) to (e) engineering, the following (f) and (g) items may be included. The method for manufacturing the first semiconductor wafer according to the present invention includes (a) engineering, (b) engineering, (c) engineering, (f) engineering, and (g) in the case of (f) and (g) engineering. Engineering and (d) the sequence of the project, in accordance with (b) engineering, (a) engineering, (c) engineering, (f) engineering, (g) engineering and (d) engineering, (e) The engineering department is carried out before (c) the project.
(f)在分割成一群的晶片反面貼附黏著薄片的工程(參照第4圖)。 (f) A process of attaching an adhesive sheet to the reverse side of a group of wafers (see Fig. 4).
(g)剝離表面保護薄片，而得到具有黏晶用接著薄膜之一群的晶片之工程(參照第5圖)。又，在包含(f)、(g)工程之情況時，在(d)工程不是擴張表面保護薄片，而是擴張黏著薄片。 (g) A process of peeling off the surface protective sheet to obtain a wafer having a group of the adhesive film for the bonding film (refer to Fig. 5). Further, in the case of the (f) and (g) engineering, the (d) project is not to expand the surface protective sheet, but to expand the adhesive sheet.
以下對於各工程說明。 The following is a description of each project.
a工程 a project
在a工程，將黏晶用接著薄膜3，貼附於在表面上形成了回路之半導體晶圓1的回路面(參照第1圖)。 In the a project, the adhesive film is bonded to the circuit surface of the semiconductor wafer 1 on which the circuit is formed on the surface by using the adhesive film 3 (see Fig. 1).
黏晶用接著薄膜，在本發明之半導體晶片的製造方法中，係配置於被選取的晶片回路面上，對於回路面具有做為封裝樹脂之機能，在晶片的搭載時係被使用於充填與晶片搭載用基板的空間以及相互的接著。 The die-bonding adhesive film is disposed on the selected wafer circuit surface in the method for manufacturing a semiconductor wafer of the present invention, and has a function as a sealing resin for the circuit surface, and is used for filling the wafer when the wafer is mounted. The space of the wafer mounting substrate and the mutual adhesion.
做為如此之接著薄膜所使用之樹脂，在將接著薄膜對於晶圓的回路面貼附之工程中，在常溫以及加熱時藉由壓著力而顯示一定程度的流動性，非常追隨回路面的凹凸，且藉由加熱會顯現接著性之樹脂被使用。其樹脂例如可列舉B級的樹脂，黏接著劑或熱塑性樹脂。 As a resin used for the film, in the process of attaching the film to the circuit surface of the wafer, a certain degree of fluidity is exhibited by the pressing force at normal temperature and heating, and the bump of the circuit surface is closely followed. And the resin which exhibits adhesion by heating is used. The resin may, for example, be a B-grade resin, an adhesive or a thermoplastic resin.
做為使用於接著薄膜之B級的樹脂例如可列舉半硬化的環氧樹脂形成之層。 As the resin used for the B-stage of the film, for example, a layer formed of a semi-cured epoxy resin can be mentioned.
用於接著薄膜之黏接著劑，係指在常溫或是在40~90℃的領域顯示黏著性、流動性，藉由加熱而硬化成為非流動性之同時，與被附體強力的接著之接著劑。做為黏接著劑，例如可舉出在常溫具有感壓接著性之黏結劑樹脂與熱固性樹脂。 The adhesive for the adhesive film refers to adhesiveness and fluidity in the field of normal temperature or 40 to 90 ° C, and hardening by heating to become non-flowing, followed by the strength of the attached body. Agent. As the adhesive, for example, a binder resin and a thermosetting resin which have pressure-sensitive adhesive properties at normal temperature can be mentioned.
做為在常溫具有感壓接著性之樹脂，例如可舉出丙烯酸樹脂、聚酯樹脂、聚乙烯醚、聚氨基甲酸乙酯樹脂、聚酰胺、苯氧基樹脂等。做為熱固性樹脂，例如可舉出環氧樹脂、丙烯酸樹脂、聚酰亞胺樹脂、酚醛樹脂、脲醛樹脂、三聚氰胺 樹脂、間苯二酚樹脂等，而以環氧樹脂較佳。又，對於接著劑，也可配合聚氨酯(甲基)丙烯酸酯低聚物等之能源線(紫外線等)硬化性樹脂來控制後述之表面保護薄片與剝離性。若配合硬化線硬化性樹脂，則能源線照射前表面保護薄片會與黏接著劑層非常密著，在能源線照射後變得較容易剝離。 The resin having pressure-sensitive adhesiveness at normal temperature may, for example, be an acrylic resin, a polyester resin, a polyvinyl ether, a polyurethane resin, a polyamide or a phenoxy resin. Examples of the thermosetting resin include epoxy resin, acrylic resin, polyimide resin, phenol resin, urea resin, and melamine. Resin, resorcinol resin, etc., and epoxy resin is preferred. Further, the surface protective sheet and the peeling property to be described later can be controlled by blending an energy source (such as ultraviolet ray) curable resin such as a urethane (meth) acrylate oligomer with the adhesive. When the hardening curable resin is blended, the surface protective sheet before the energy ray irradiation is very dense with the adhesive layer, and is easily peeled off after the energy ray irradiation.
如上述各成分所形成之黏著劑，不僅在常溫的貼附為可能，且在常溫或是加熱時藉由壓著力會顯現適度的流動性，又由於具有能源線硬化性與加熱硬化性，因此會非常追隨回路面的凹凸而形成沒有空孔的樹脂層，在反面研磨時密著於表面保護薄片而對於晶圓的固定有所貢獻，在實裝時，可做為將晶片與晶片搭載用基板接著時之接著劑使用。然後，經過熱硬化，最終可賦予耐衝擊性高之硬化物，而且，剪切強度與剝離強度很均衡，即使在嚴格的熱濕條件下也可保持充分的接著物性。 The adhesive formed by each of the above components is not only attached at a normal temperature, but also exhibits moderate fluidity by a pressing force at normal temperature or heating, and has energy line hardenability and heat hardenability. The resin layer having no voids is formed in accordance with the unevenness of the circuit surface, and is adhered to the surface protective sheet during the back surface polishing to contribute to the fixing of the wafer, and can be used for mounting the wafer and the wafer during mounting. The substrate is then used as an adhesive. Then, after heat hardening, it is possible to finally impart a cured product having high impact resistance, and the shear strength and the peel strength are well balanced, and sufficient adhesive properties can be maintained even under strict heat and humidity conditions.
用於接著薄膜之熱塑性樹脂，為藉由加熱而發揮可塑化之接著性的樹脂。做為如此之熱塑性樹脂，例如聚酰亞胺樹脂般之化學上、物理上具有耐熱性的樹脂，會提升半導體裝置的信賴性因此為佳。 The thermoplastic resin used for the adhesive film is a resin which exhibits plasticity adhesion by heating. As such a thermoplastic resin, a resin which is chemically and physically heat-resistant like a polyimide resin is preferable in that the reliability of the semiconductor device is improved.
從如上述成分所形成之接著薄膜3的厚度，通常為3~100μm，較佳的情況為3~95μm，特別以5~85μm程度為佳。又，在晶圓表面上形成了凸塊2之情況。為了不發生空孔而覆蓋回路面，且由於凸塊2貫通接著薄膜3，因此凸塊2之平均高度(HB)與接著薄膜3的厚度(TA)之比)(HB/TA)，以1.0/0.3~1.0/0.95為佳，而以1.0/0.5~1.0/0.9較佳，更以 1.0/0.6~1.0/0.85為佳，而特別以1.0/0.7~1.0/0.8的範圍為佳。凸塊2的平均高度(HB)，為從晶片表面(除去凸塊的回路面)到圖塊頂部為止的高度，若凸塊有複數的情況，則會根據這些的算數平均數。 The thickness of the adhesive film 3 formed from the above components is usually from 3 to 100 μm, preferably from 3 to 95 μm, particularly preferably from 5 to 85 μm. Further, the bump 2 is formed on the surface of the wafer. The loop surface is covered so as not to have a void, and since the bump 2 penetrates through the film 3, the ratio of the average height (H B ) of the bump 2 to the thickness (T A ) of the film 3 (H B /T A ) ), preferably 1.0/0.3~1.0/0.95, and preferably 1.0/0.5~1.0/0.9, more preferably 1.0/0.6~1.0/0.85, and especially in the range of 1.0/0.7~1.0/0.8 good. The average height (H B ) of the bump 2 is the height from the surface of the wafer (the loop surface from which the bump is removed) to the top of the tile. If there are multiple bumps, the arithmetic average is based on these.
對於接著薄膜3的厚度，若凸塊過高，則晶片表面(除去凸塊的回路面)與晶片搭載用基板之間產生間隔，而成為空孔發生的原因。另一方面，若接著薄膜過厚，則凸塊不會貫通接著劑層，而成為導通不良的原因。 When the thickness of the film 3 is too high, if the bump is too high, a gap is formed between the wafer surface (the circuit surface from which the bump is removed) and the wafer mounting substrate, and the voids are generated. On the other hand, if the film is too thick, the bump does not penetrate the adhesive layer and causes conduction failure.
又，接著薄膜3，在不有損操作性的情況下也可使用單層，而可做為層積在支持薄膜4上之接著薄片使用。 Further, the film 3 can be used as a subsequent sheet laminated on the support film 4 without damaging the operability.
做為支持薄膜4，可使用，例如，聚乙烯薄膜、聚丙烯薄膜、聚丁烯薄膜、聚丁二烯薄膜、聚甲基戊烯薄膜、聚氯乙烯薄膜、氯乙烯共聚物薄膜、聚氨酯薄膜、乙烯-醋酸乙烯共聚物薄膜、離子鍵樹脂薄膜、乙烯-(甲基)丙烯酸共聚物薄膜，乙烯-(甲基)丙烯酸酯共聚物膜，氟樹脂膜等之薄膜。又也可使用它們的架橋薄膜。更且可為這些的層積薄膜。更且這些薄膜可為透明薄膜、著色薄膜或是不透明的薄膜。然而，若支持薄片太硬之情況，凸塊的頂部有壓迫的虞慮，因此使用具有適度彈力的晶圓特別為佳。為了將支持薄膜上之接著薄膜，轉印於晶圓(晶片)的回路面，使支持薄膜與接著薄膜是可剝離地來層積。因此，支持薄膜之接觸於接著薄膜的表面張力，以40mN/m以下為佳，更以在37mN/m以下為佳，特別以在35mN/m以下為佳。如此之表面張力低的薄膜，可適當選擇材質而得到，又，可藉由在支持薄膜的表面上，塗布矽氧樹脂 或醇酸樹脂等之剝離劑而施以剝離處理而得到。 As the support film 4, for example, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, a polyvinyl chloride film, a vinyl chloride copolymer film, a polyurethane film can be used. A film of an ethylene-vinyl acetate copolymer film, an ionomer resin film, an ethylene-(meth)acrylic copolymer film, an ethylene-(meth)acrylate copolymer film, a fluororesin film, or the like. It is also possible to use their bridging film. More preferably, it can be a laminated film of these. Furthermore, these films may be transparent films, colored films or opaque films. However, if the support sheet is too hard, the top of the bump has a pressing concern, so it is particularly preferable to use a wafer having a moderate elasticity. In order to transfer the adhesive film on the support film to the circuit surface of the wafer (wafer), the support film and the adhesive film are layered in a peelable manner. Therefore, the surface tension of the support film in contact with the adhesive film is preferably 40 mN/m or less, more preferably 37 mN/m or less, and particularly preferably 35 mN/m or less. Such a film having a low surface tension can be obtained by appropriately selecting a material, and a silicone resin can be coated on the surface of the support film. Or a release agent, such as an alkyd resin, and it is obtained by the peeling process.
如此之支持薄膜的厚度，通常為10~500μm，而以15~300μm為佳，特別以20~250μm為佳。 The thickness of such a support film is usually 10 to 500 μm, preferably 15 to 300 μm, particularly preferably 20 to 250 μm.
此支持薄膜4，在接著進行工程(b)之情況，在其之前剝離接著薄膜3即可。 In the case where the support film 4 is subsequently subjected to the process (b), the film 3 may be peeled off before.
做為半導體晶圓1，可舉出先前所使用的矽半導體晶圓、鎵．砷半導體晶圓等之半導體晶圓，但並非限定於此，可使用各種半導體晶圓。對於晶圓表面之回路的形成，包含蝕刻法、微影法等之從以往之泛用的方法，可藉由各種方法來進行。在晶圓之回路形成工程中，既定回路形成。又，在回路面上，形成用於與晶片搭載用基板之導通之導通用凸起物(凸塊)2為佳。凸塊2之高度，徑，可根據半導體的設計而有各種各樣，但一般而言，高度為10~100μm程度，徑為20~100μm程度。如此之凸塊2，多以金、銅、焊錫等之金屬來形成。凸塊2之形狀雖沒有特別限定，但可除了圓柱狀或球狀以外，還可舉出如第1圖所示之圓柱的先端載置半球的形狀等。 As the semiconductor wafer 1, the germanium semiconductor wafer and gallium previously used can be cited. Although semiconductor wafers such as arsenic semiconductor wafers are not limited thereto, various semiconductor wafers can be used. The formation of a circuit on the surface of the wafer can be carried out by various methods including a conventional method such as an etching method or a lithography method. In the circuit formation process of the wafer, a predetermined loop is formed. Further, it is preferable to form a conductive projection (bump) 2 for conducting conduction with the wafer mounting substrate on the circuit surface. The height and diameter of the bumps 2 can vary depending on the design of the semiconductor, but generally, the height is about 10 to 100 μm, and the diameter is about 20 to 100 μm. Such a bump 2 is often formed of a metal such as gold, copper or solder. The shape of the bump 2 is not particularly limited, and may be a cylindrical shape or a spherical shape, and the shape of the tip end mounting hemisphere of the column as shown in Fig. 1 may be mentioned.
將接著薄膜3貼附於晶圓1之表面的方法沒有特別限制，可藉由貼片機等泛用的手法來進行。將接著薄片貼附於晶圓1的表面之情況，係在晶圓1的表面上轉印接著薄膜3，支持薄膜4剝離。又，接著薄膜3或支持薄膜4，也可預先切斷成與半導體晶圓1略為相同的形狀，在晶圓貼覆該薄膜後，將多的薄膜延著晶圓外周切斷，除去。 The method of attaching the adhesive film 3 to the surface of the wafer 1 is not particularly limited, and it can be carried out by a general method such as a mounter. When the subsequent sheet is attached to the surface of the wafer 1, the film 3 is transferred onto the surface of the wafer 1, and the support film 4 is peeled off. Further, the film 3 or the support film 4 may be cut into a shape similar to that of the semiconductor wafer 1 in advance, and after the film is pasted on the wafer, a plurality of films are cut and removed around the periphery of the wafer.
(b)工程 (b) Engineering
在(b)工程中，層積黏晶用接著薄膜3與表面保護薄片7(參 照第2圖)。 In (b) engineering, the laminated microcrystals are bonded to the film 3 and the surface protective sheet 7 (see According to Figure 2).
表面保護薄膜7，在後述反面研磨工程((c)工程)中，係為了保持晶圓1，保護回路面而被貼附。 The surface protective film 7 is attached to protect the circuit surface in order to hold the wafer 1 in a reverse polishing process ((c) project) to be described later.
做為表面保護薄片7，可使用用於此種用途之各種黏著薄片等而沒有特別限制。 As the surface protective sheet 7, various adhesive sheets and the like for such use can be used without particular limitation.
又，在進行後述(g)工程之情況，在接著薄膜3與表面保護薄片7之界面進行剝離，因此接著薄膜3與表面保護薄片7係可再剝離得層積。 Further, in the case where the (g) process described later is performed, the interface between the film 3 and the surface protective sheet 7 is peeled off, so that the film 3 and the surface protective sheet 7 can be further peeled and laminated.
接著薄膜3具有感壓接著性之情況，表面保護薄片7並非一定要具有黏著性，也可為樹脂薄膜。做為如此之樹脂薄膜，例如，除了做為上述支持薄膜4而舉例者以外，還可使用聚對苯二甲酸乙二醇酯薄膜、聚萘二甲酸膜、聚丁烯對酞酸酯薄膜、聚苯乙烯薄膜、聚碳酸酯薄膜、聚酰亞胺薄膜等之樹脂薄膜。又，也可使用這些的架橋薄膜。更且，也可為這些的層積薄膜。 Next, the film 3 has a pressure-sensitive adhesive property, and the surface protective sheet 7 does not necessarily have adhesiveness, and may be a resin film. As such a resin film, for example, in addition to the above-mentioned support film 4, a polyethylene terephthalate film, a polynaphthalene film, a polybutylene terephthalate film, or the like may be used. A resin film such as a polystyrene film, a polycarbonate film, or a polyimide film. Also, these bridge films can be used. Further, a laminated film of these may also be used.
接著薄膜3不具有感壓接著性之情況，表面保護薄膜7，其本身可為具有快黏性之樹脂薄膜，也可為在樹脂薄膜的表面上具有再剝離性的黏著劑層之弱黏著薄片。 Then, the film 3 does not have pressure-sensitive adhesiveness, and the surface protective film 7 itself may be a resin film having a fast adhesive property, or may be a weak adhesive sheet of an adhesive layer having re-peelability on the surface of the resin film. .
又，接著薄膜3若不具能源線硬化性之情況，做為表面保護薄片7，可使用能源線硬化性黏著薄片。能源線硬化性黏著薄片之黏著劑層，具有由於紫外線等之能源線硬化，而黏著力消失的性質。因此，藉由在接著薄膜3面上貼附能源線硬化性薄片，進行反面研磨工程後，對於黏著劑層照射能源線，黏著力消失，而可容易進行接著在薄膜3與表面保護薄片 7之界面的剝離。又，也可使用預先對於能源線硬化性黏著薄片之黏著劑層照射能源線，使黏著性減低之黏著薄片。 Further, the film 3 is used as the surface protective sheet 7 in the case where the film 3 does not have energy line hardenability, and an energy ray-curable adhesive sheet can be used. The adhesive layer of the energy line hardenable adhesive sheet has a property that the adhesion is lost due to hardening of the energy source such as ultraviolet rays. Therefore, by attaching the energy ray-curable sheet to the surface of the film 3 and performing the reverse surface polishing process, the adhesive layer is irradiated with the energy source, and the adhesive force disappears, and the film 3 and the surface protective sheet can be easily performed. Peeling of the interface of 7. Further, it is also possible to use an adhesive sheet in which an energy source line is irradiated to the adhesive layer of the energy ray-curable adhesive sheet in advance to reduce the adhesion.
對於進行後述(f)工程以及(g)工程之情況，上述的表面保護薄片7的形狀沒有特別限定，可會略等同於晶圓1的形狀(略同形狀)或是也可為較晶圓1大一圈的形狀。在此情況，可擴張在(f)工程所貼附的黏著薄片而將接著薄膜3個片化。 The shape of the surface protection sheet 7 described above is not particularly limited, and may be slightly equivalent to the shape of the wafer 1 (slightly the same shape) or may be wafer-like for the case of the following (f) engineering and (g) engineering. 1 big circle shape. In this case, the adhesive sheet attached to the (f) project can be expanded to form three sheets of the succeeding film.
另一方面，對於若不進行(f)工程及(g)工程之情況，表面保護薄片7的形狀為較晶圓1大一圈的形狀為佳。在此情況，可擴張表面保護薄片7而使接著薄膜3個片化。亦即，表面保護薄片7為如此形狀之情況，可將表面保護薄片7之剩餘部分貼附在環狀框架等之治具。因此，擴張表面保護薄片7為可能。 On the other hand, in the case where the (f) engineering and the (g) engineering are not performed, the shape of the surface protective sheet 7 is preferably one turn larger than the wafer 1. In this case, the surface protective sheet 7 can be expanded to form three sheets of the succeeding film. That is, in the case where the surface protective sheet 7 has such a shape, the remaining portion of the surface protective sheet 7 can be attached to a jig such as an annular frame. Therefore, it is possible to expand the surface protection sheet 7.
如上述形狀之表面保護薄片7，可預先切斷成與晶圓1略同形狀或是較其大一圈的形狀而與黏晶用接著薄膜3層積，或是可以在晶圓1上介在黏晶用接著薄膜3而貼附表面保護薄片7後，將多餘的薄片延著晶圓1的外周或是較晶圓1大一圈的形狀切斷，除去。 The surface protection sheet 7 having the above shape may be previously cut into a shape slightly larger than the wafer 1 or a shape larger than the wafer 1 to be laminated with the adhesive film 3, or may be interposed on the wafer 1. After the surface protective sheet 7 is adhered to the adhesive film 3, the excess sheet is cut along the outer circumference of the wafer 1 or a shape larger than the wafer 1 and removed.
又，表面保護薄片7的厚度，通常為20~1000μm，而以50~250μm較佳。表面保護薄片7具有黏著劑層之情況，在上述厚度中，黏著劑層的厚度為5~500μm，或是以10~100μm為佳。又，層積接著薄膜與表面保護薄片之方法沒有特別限定，可藉由同於(a)工程使用貼片機等泛用之手法來進行。 Further, the thickness of the surface protective sheet 7 is usually 20 to 1000 μm, and preferably 50 to 250 μm. The surface protective sheet 7 has an adhesive layer. In the above thickness, the thickness of the adhesive layer is 5 to 500 μm, or preferably 10 to 100 μm. Further, the method of laminating the film and the surface protective sheet is not particularly limited, and it can be carried out by a general method such as a placement machine using (a) engineering.
又，在上述(a)工程前進行(b)工程之情況，層積黏 晶用接著薄膜與表面保護薄片，得到層積薄片，將該層積薄片之黏晶用接著薄片貼附於半導體晶圓的回路面。 In addition, in the case of (b) engineering before (a) engineering, layering The film is bonded to the surface protective sheet to obtain a laminated sheet, and the bonded crystal of the laminated sheet is attached to the circuit surface of the semiconductor wafer by the subsequent sheet.
層積薄片之製造方法沒有特別限定，可將支持薄膜上的接著薄膜轉印在表面保護薄片上，也可使構成接著薄膜之混合物質成為既定的膜厚而直接塗布在表面保護薄片上形成接著薄膜。又，將層積薄片之接著薄膜貼附於半導體晶圓之回路面的手法並沒有特別限定，可藉由同於(a)工程使用貼片機等泛用之手法來進行。 The method for producing the laminated sheet is not particularly limited, and the adhesive film on the support film may be transferred onto the surface protective sheet, or the mixture constituting the adhesive film may be applied to the surface protective sheet to form a predetermined film thickness. film. Further, the method of attaching the adhesive film of the laminated sheet to the circuit surface of the semiconductor wafer is not particularly limited, and can be carried out by the same method as (a) engineering using a mounter or the like.
(c)工程 (c) Engineering
在(c)工程，研磨半導體晶圓1的反面，將晶圓1個片化成各回路，而得到分割後的一群的晶片100(參照第3圖)。又，在(c)工程前，進行後述的(e)工程，在晶圓上，在其表面附近，形成區劃成各回路之改質領域層。 In the (c) project, the reverse side of the semiconductor wafer 1 is polished, and the wafer is sliced into individual circuits to obtain a divided group of wafers 100 (see FIG. 3). Further, before the (c) project, the (e) project described later is performed, and a modified domain layer of each circuit is formed on the wafer in the vicinity of the surface.
晶圓1之反面研磨，係藉由使用磨床等之方法來進行。藉由反面研磨，晶圓1的厚度變薄，由於反面研磨之應力傳播至形成於晶圓1之表面附近的改質領域層，以改質領域層1為起點，晶圓1分割成各晶片10。藉由晶圓1之反面研磨而分割之各晶片10的厚度為15~400μm程度。 The reverse polishing of the wafer 1 is carried out by a method using a grinder or the like. By the reverse surface polishing, the thickness of the wafer 1 is thinned, and the stress of the reverse surface polishing propagates to the modified domain layer formed near the surface of the wafer 1, and the wafer 1 is divided into wafers starting from the modified domain layer 1. 10. The thickness of each of the wafers 10 divided by the back surface polishing of the wafer 1 is about 15 to 400 μm.
(c)工程之後，可以進行(f)工程以及(g)工程。 (c) After the project, (f) engineering and (g) engineering can be carried out.
(f)工程 (f) Engineering
在(f)工程，在分割成一群的晶片100反面貼附黏著薄片13(參照第4圖)。黏著薄片13，係在基材12上形成黏著劑層11而可得到。 In the (f) project, the adhesive sheet 13 is attached to the reverse side of the wafer 100 divided into a group (see Fig. 4). The adhesive sheet 13 is obtained by forming an adhesive layer 11 on the substrate 12.
黏著劑層11，可藉由以往便已週知的各種黏著劑 來形成得到。做為如此之黏著劑，雖然並沒有任何限定，例如橡膠系、丙烯酸系、矽氧樹脂系、聚乙烯醚等之黏著劑被使用。又，也可使用能源線硬化型或加熱發泡型、水澎潤型之黏著劑。做為能源線硬化(紫外線硬化、電子線硬化)型黏著劑，特別以使用紫外線硬化型黏著劑為佳。 The adhesive layer 11 can be obtained by various adhesives known in the past. To form it. As such an adhesive, although it is not limited at all, an adhesive such as a rubber type, an acrylic type, a silicone resin type, or a polyvinyl ether is used. Further, an energy ray-curing type, a heat-foaming type, or a water-repellent type of adhesive may be used. As an energy line hardening (ultraviolet hardening, electron beam hardening) type adhesive, it is preferable to use an ultraviolet curing type adhesive.
黏著劑層11，在製造後述晶片時，在其外周部貼附於環狀框架5(參照第4圖)。 When the wafer to be described later is manufactured, the adhesive layer 11 is attached to the annular frame 5 at its outer peripheral portion (see FIG. 4).
貼附於環狀框架的部分(黏著薄片的外周部)之黏著薄片(貼附後，在130℃經過2小時加熱後對於SUS板之黏著力)，較佳的情況為15N/25mm以下，而以10N/25mm以下較佳，特別以5N/25mm以下為佳。藉由使在黏著薄片之外周部的黏著力在上述範圍，對於環狀框架之貼附性良好，可防止對於環狀框架的殘膠。 The adhesive sheet attached to the portion of the annular frame (the outer peripheral portion of the adhesive sheet) (the adhesion to the SUS plate after heating at 130 ° C for 2 hours) is preferably 15 N/25 mm or less. It is preferably 10 N/25 mm or less, particularly preferably 5 N/25 mm or less. By setting the adhesive force on the outer peripheral portion of the adhesive sheet to the above range, the adhesion to the annular frame is good, and the residual glue to the annular frame can be prevented.
黏著劑層11之厚度並沒有特別限定，以1~100μm為佳，更以2~80μm為佳，特別以3~50μm為佳。 The thickness of the adhesive layer 11 is not particularly limited, and is preferably 1 to 100 μm, more preferably 2 to 80 μm, particularly preferably 3 to 50 μm.
做為基材12，雖沒有特別限定，可使用例如，低密度聚乙烯(LDPE)薄膜、線性低密度聚乙烯(LLDPE)薄膜、高密度聚乙烯(HDPE)薄膜等的聚乙烯薄膜、聚丙烯薄膜、聚丁烯薄膜、聚丁二烯薄膜、聚甲基戊烯薄膜、聚氯乙烯薄膜、氯乙烯共聚物薄膜、聚對苯二甲酸乙二醇酯薄膜、聚對苯二甲酸丁二醇酯薄膜、聚氨酯薄膜、聚酰亞胺膜、乙烯-乙酸乙烯共聚物薄膜、離子鍵樹脂薄膜、乙烯．(甲基)丙烯酸共聚物薄膜、乙烯．(甲基)丙烯酸酯共聚物薄膜、聚苯乙烯薄膜、聚碳酸酯薄膜、氟樹脂薄膜，以及其氫化物或是變性物等形成之薄膜。又，也可使 用這些的架橋薄膜或層積薄膜。 The substrate 12 is not particularly limited, and for example, a polyethylene film such as a low density polyethylene (LDPE) film, a linear low density polyethylene (LLDPE) film, a high density polyethylene (HDPE) film, or the like can be used. Film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polybutylene terephthalate Ester film, polyurethane film, polyimide film, ethylene-vinyl acetate film, ionomer resin film, ethylene. (Meth)acrylic copolymer film, ethylene. A film formed of a (meth) acrylate copolymer film, a polystyrene film, a polycarbonate film, a fluororesin film, and a hydride or a denature thereof. Also, it can Use these bridge films or laminate films.
又，在使用紫外線做為為了硬化黏著劑層11而照射之能源線之情況，對於紫外線具有透過性的基材為佳。又，在使用電子線做為能源線之情況，基材不需要有光透過性。若基材被著色，則作業者可目視確認到黏著薄片被貼附於被附體(一群的晶片100)，因此較佳。若在被附體面的視認性被要求的情況，基材以透明為佳。 Further, in the case where ultraviolet rays are used as the energy source for irradiating the adhesive layer 11, the substrate having transparency to ultraviolet rays is preferable. Moreover, in the case where an electron beam is used as an energy source, the substrate does not need to have light permeability. When the substrate is colored, the operator can visually confirm that the adhesive sheet is attached to the attached body (a group of wafers 100), which is preferable. In the case where the visibility of the attached body surface is required, the substrate is preferably transparent.
又，對於基材12的上面，亦即黏著劑層11設置側之基材表面，為了使與黏著劑層之密著性提升，可施以電暈處理或是設置基底層。又，也可在與黏著劑層相反的面上塗布各種塗膜。在本發明中黏著薄片13，係藉由在上述基材12之單面設置黏著劑層11而製造。基材12的厚度，以20~200μm為佳，而以25~110μm較佳，特別以50~90μm之範圍為佳。若基材12的厚度過厚，則對抗基材12的彎曲之力變大，在選取時之剝離角度不容易變大。因此選取所需要的力增加，而有選取性差的情況。在基材12的厚度薄的情況，根據材料，會有製膜變得困難的情況。 Further, on the upper surface of the substrate 12, that is, the surface of the substrate on the side where the adhesive layer 11 is provided, in order to improve the adhesion to the adhesive layer, a corona treatment or a base layer may be provided. Further, various coating films may be applied to the surface opposite to the pressure-sensitive adhesive layer. In the present invention, the adhesive sheet 13 is produced by providing the adhesive layer 11 on one surface of the substrate 12. The thickness of the substrate 12 is preferably 20 to 200 μm, more preferably 25 to 110 μm, and particularly preferably 50 to 90 μm. When the thickness of the base material 12 is too thick, the force against the bending of the base material 12 becomes large, and the peeling angle at the time of selection does not easily become large. Therefore, the force required for the selection is increased, and the selection is poor. When the thickness of the base material 12 is thin, depending on the material, film formation may become difficult.
在上述基材表面上設置黏著劑層之方法，可在剝離薄片上塗布使構成黏著劑層之黏著劑組成物成為既定膜厚而形成黏著劑層，轉印至上述基材的表面上，或是也可在上述基材的表面上直接塗布黏著劑組成物形成黏著劑層。又，做為剝離薄片，可使用同於上述支持薄膜之物。又，黏著薄片13之貼附手法沒有特別限定，可藉由同於(a)工程使用貼片機等泛用之手法來進行。 a method of providing an adhesive layer on the surface of the substrate, and applying the adhesive composition constituting the adhesive layer to a predetermined film thickness to form an adhesive layer, and transferring the adhesive layer to the surface of the substrate, or It is also possible to directly apply an adhesive composition on the surface of the above substrate to form an adhesive layer. Further, as the release sheet, the same material as the above-mentioned support film can be used. Further, the attachment method of the adhesive sheet 13 is not particularly limited, and can be carried out by using a general method such as a placement machine as in (a) engineering.
(g)工程 (g) Engineering
在(g)工程，剝離表面保護薄片7，而得到具有黏晶用接著薄膜3之一群的晶片100(參照第5圖)。剝離表面保護薄片7的方法沒有特別限定。 In the (g) project, the surface protective sheet 7 is peeled off to obtain a wafer 100 having one of the bonded film 3 (see Fig. 5). The method of peeling off the surface protective sheet 7 is not specifically limited.
(d)工程 (d) Engineering
在(d)工程，藉由將表面保護薄片7或黏著薄片13擴張，將黏晶用接著薄膜3個片化成各晶片，而得到在回路面具有黏晶接著薄膜3之晶片10。第6圖，係表示擴張黏著薄片13之圖。在(c)工程後，進行上述(f)工程及(g)工程之情況，在之後的(d)工程擴張黏著薄片。又，若是在(c)工程後進行(d)工程之情況，在(d)工程擴張表面保護薄片。 In the (d) process, the surface protective sheet 7 or the adhesive sheet 13 is expanded, and the adhesive film is formed into three wafers by the subsequent film to obtain the wafer 10 having the die-bonding film 3 on the circuit surface. Fig. 6 is a view showing the expanded adhesive sheet 13. After (c) the project, the above (f) project and (g) project are carried out, and in the subsequent (d) project, the adhesive sheet is expanded. In addition, in the case of (d) engineering after (c) engineering, the surface protective sheet is expanded in (d) engineering.
在擴張時，藉由使黏晶用接著薄片3維持在較佳的情況為15℃以下，而更藉由維持在-10~10℃，由於擴張所產生的應力(擴張力)變得容易傳播，接著薄膜變形，將接著薄膜個片化成各晶片變得容易。密著於晶片10之接著薄膜，其變形被晶片拘束因此不會被延伸，但位於晶片間之接著薄膜，變形不會被拘束，因此會由於延伸而被切斷成略同形狀。擴張以1~300mm/秒的速度來進行為佳。 At the time of expansion, by maintaining the bonding sheet 3 in the preferred case at 15 ° C or lower, and further maintaining the temperature at -10 to 10 ° C, the stress (expansion force) due to expansion becomes easy to propagate. Then, the film is deformed, and it becomes easy to form the film into individual wafers. The film adhering to the wafer 10 is deformed by the wafer so that it is not stretched, but the film is located between the wafers, and the deformation is not restrained, so that it is cut into a similar shape due to the stretching. The expansion is preferably performed at a speed of 1 to 300 mm/sec.
(e)工程 (e) Engineering
(e)工程係在(c)工程之前進行，在(e)工程，從晶圓反面側照入雷射光，而在晶圓的表面附近形成將各回路區劃之改良領域層。雷射光係藉由雷射光源照射。雷射光源，係使波長以及相位一致的光發生之裝置，做為雷射光的種類，可舉出發生脈衝雷射光之Nd-YAG雷射、Nd-YVO雷射、Nd-YLF雷射、鈦 藍寶石雷射等引起多分子吸收之物。雷射光的波長，為800~1100nm為佳，1064nm更佳。 (e) The engineering department is carried out before (c) the project. In the (e) project, laser light is irradiated from the opposite side of the wafer, and an improved domain layer that partitions each circuit is formed in the vicinity of the surface of the wafer. The laser light is illuminated by a laser source. A laser light source is a device that generates light having a uniform wavelength and phase, and is a type of laser light, and includes a Nd-YAG laser, a Nd-YVO laser, a Nd-YLF laser, and a titanium which generate pulsed laser light. A sapphire laser or the like that causes multimolecular absorption. The wavelength of the laser light is preferably 800 to 1100 nm, and more preferably 1064 nm.
雷射光照射至晶圓內部，延著區劃各回路的預定切斷線，在晶圓內部形成改質領域層。雷射光掃描一條預定切斷線的次數可為1次或是複數次。較佳的情況為，監視雷射光的照射位置與回路間的預定切斷線的位置，一邊進行雷射光的定位，一邊照射雷射光。藉由將雷射光的集光點設定在晶圓表面附近，可在表面附近形成改質領域層。 The laser light is irradiated onto the inside of the wafer, and a predetermined cut line of each loop is formed to form a modified domain layer inside the wafer. The number of times a laser beam scans a predetermined cut line can be one or multiple. Preferably, the laser beam is irradiated while the laser light is positioned while monitoring the position of the predetermined cutting line between the irradiation position of the laser light and the circuit. By setting the light collecting point of the laser light near the surface of the wafer, a modified domain layer can be formed in the vicinity of the surface.
藉由如上述(a)~(g)工程，可得到具有接著薄膜之半導體晶片。 By the above (a) to (g) engineering, a semiconductor wafer having a subsequent film can be obtained.
又，與本發明有關之第2半導體晶片製造方法，係包含以下的(a’)~(e’)工程。(a’)將黏晶用接著薄膜貼附於在表面形成了回路之半導體晶圓的回路面之工程(參照第1圖)，(b’)層積黏晶用接著薄膜與表面保護薄片之工程(參照第2圖)，(c’)研磨半導體晶圓的反面之工程(參照第7圖)，(d’)藉由將表面保護薄片擴張，將黏晶用接著薄膜個片化成各晶片，而得到在回路面具有黏晶用接著薄膜之晶片的工程(參照第6圖)，以及(e’)從晶圓反面側照入雷射光，而在晶圓上形成將各回路區劃之改良領域層之工程，依照從前述(a’)工程至(d’)工程的順序進行，或是依照(b’)工程、(a’)工程、(c’)工程、以及(d’)工程的順序進行，前述(e’)工程係在(c’)工程之後，且(d’)工程之前進行之半導體的製造方法。 Further, the second semiconductor wafer manufacturing method according to the present invention includes the following (a') to (e') projects. (a') A process of attaching a die bond film to a circuit surface of a semiconductor wafer having a circuit formed on a surface thereof (see FIG. 1), and (b') a laminate film and a surface protection sheet. Engineering (refer to Fig. 2), (c') polishing the reverse side of the semiconductor wafer (see Fig. 7), (d') by expanding the surface protective sheet, and forming the bonded film into individual wafers. And obtaining a wafer having a wafer for bonding a film on the circuit surface (refer to FIG. 6), and (e') irradiating laser light from the opposite side of the wafer, thereby forming an improvement on the division of each circuit on the wafer. The engineering of the domain layer is carried out in the order from (a') to (d'), or in accordance with (b'), (a'), (c'), and (d') The order of the above (e') is the manufacturing method of the semiconductor which is performed after the (c') process and before the (d') process.
又，與本發明有關之第2半導體製造方法，除了(a’)~(e’)工程以外，還可以含有以下的(f’)、(g’)工程。與本發 明有關之第2半導體晶片之製造方法，在含有(f’)、(g’)工程的情況，係依照(a’)工程、(b’)工程、(c’)工程、(f’)工程、(g’)工程以及(d’)工程之順序進行，又，依照(b’)工程、(a’)工程、(c’)工程、(f’)工程、(g’)工程以及(d’)工程之順序進行，(e’)工程係在(c’)工程之後，且在(d’)工程之前進行。 Further, the second semiconductor manufacturing method according to the present invention may include the following (f') and (g') projects in addition to the (a') to (e') engineering. With this hair The method for manufacturing the second semiconductor wafer according to the above description is based on (a') engineering, (b') engineering, (c') engineering, (f') in the case of (f') or (g') engineering. The sequence of engineering, (g') engineering, and (d') engineering, in accordance with (b') engineering, (a') engineering, (c') engineering, (f') engineering, (g') engineering, and (d') The sequence of the project is carried out, and the (e') project is performed after the (c') project and before the (d') project.
(f’)在半導體晶圓的反面貼附黏著薄片之工程(參照第8圖)。 (f') A process of attaching an adhesive sheet to the reverse side of the semiconductor wafer (see Fig. 8).
(g’)剝離表面保護薄片，而得到具有黏晶用接著薄膜之半導體晶片之工程(參照第9圖)。又，在包含(f’)、(g’)工程之情況時，在(d’)工程不是擴張表面保護薄片，而是擴張黏著薄片。 (g') The surface protective sheet is peeled off to obtain a semiconductor wafer having a bonding film for a bonding film (refer to Fig. 9). Further, in the case of the (f') or (g') engineering, the (d') project is not to expand the surface protective sheet but to expand the adhesive sheet.
以下，對於各工程說明。又，(a’)工程以及(b’)工程，係同於第1半導體晶片製造方法中之(a)工程及(b)工程，因此省略說明。。 The following is a description of each project. Further, since the (a') engineering and the (b') engineering are the same as the (a) engineering and the (b) engineering in the first semiconductor wafer manufacturing method, the description thereof is omitted. .
(c’)工程 (c’) Engineering
在(c’)工程中，研磨半導體晶圓之反面(參照第7圖)。晶圓1之反面研磨，係藉由使用磨床等之方法來進行。藉由反面研磨，晶圓1厚度變薄，晶圓1的厚度為15~400μ程度。 In the (c') project, the reverse side of the semiconductor wafer is polished (see Fig. 7). The reverse polishing of the wafer 1 is carried out by a method using a grinder or the like. The wafer 1 is thinned by reverse grinding, and the thickness of the wafer 1 is about 15 to 400 μ.
同於製造上述第1半導體晶片之製造方法，在(c’)工程後，也可進行接下來的(f’)工程以及(g’)工程。 In the same manner as the manufacturing method of the first semiconductor wafer described above, after the (c') process, the next (f') process and the (g') process can be performed.
(f’)工程 (f’) engineering
在(f’)工程，係在半導體晶圓1的反面貼附黏著薄片13(參照第8圖)。黏著薄片13，係同於上述(f)工程中之黏著薄片13。又，貼附黏著薄片13之方法並沒有特別限定，可藉由同於(a)工程使用貼片機等泛用之手法來進行。 In the (f') project, the adhesive sheet 13 is attached to the reverse side of the semiconductor wafer 1 (see Fig. 8). The adhesive sheet 13 is the same as the adhesive sheet 13 in the above (f) project. Further, the method of attaching the adhesive sheet 13 is not particularly limited, and can be carried out by using a general method such as a placement machine as in (a) engineering.
(g’)工程 (g’) Engineering
在(g’)工程，剝離表面保護薄片7，而得到具有黏晶用接著薄膜3之半導體晶圓1(參照第9圖)。剝離表面保護薄片7的方法並沒有特別限定。 In the (g') project, the surface protective sheet 7 is peeled off, and the semiconductor wafer 1 having the adhesive film 3 is obtained (refer to Fig. 9). The method of peeling off the surface protective sheet 7 is not particularly limited.
(d’)工程 (d’) Engineering
在(d’)工程，藉由擴張表面保護薄片或黏著薄片13，將黏晶用接著薄膜3個片化成各晶片，而得到在回路面上具有黏晶用接著薄片3之晶片10(參照第6圖)。在(c’)工程後，進行上述(f’)工程及(g’)工程之情況，在之後的(d’)工程擴張黏著薄片。又，若是在(c’)工程後進行(d’)工程之情況，在(d’)工程擴張表面保護薄片。又，在(c’)工程之後，且在(d’)工程之前，進行後述(e’)工程，在晶圓上形成區劃各回路之改質領域層。 In the (d') project, by expanding the surface protective sheet or the adhesive sheet 13, three sheets of the adhesive film are formed into individual wafers to obtain a wafer 10 having a bonding sheet 3 on the circuit surface (see 6 figure). After the (c') project, the above (f') engineering and (g') engineering were carried out, and the adhesive sheet was expanded in the subsequent (d') project. Further, if the (d') project is performed after the (c') project, the surface protective sheet is expanded in the (d') project. Further, after the (c') project, and before the (d') project, the (e') project described later is performed to form a modified domain layer of each circuit on the wafer.
半導體晶圓1在進行(d’)工程的時點上還沒有被個片化時，藉由擴張表面保護薄片7或是黏著薄片13，藉由擴張而發生的應力(擴張力)傳播至晶圓內部的改質領域層，以改質領域層為起點之晶圓1以及黏晶用接著薄膜3個片化成各回路。 When the semiconductor wafer 1 has not been sliced at the time of performing the (d') process, the stress (expansion force) generated by the expansion is propagated to the wafer by expanding the surface protective sheet 7 or the adhesive sheet 13. In the internal reforming layer, the wafer 1 starting from the modified domain layer and the bonding film are formed into three circuits by the bonding film.
又，在(d’)工程之前，也可藉由對於半導體晶圓1給予衝擊，以改質領域做為契機，使其劈開等之手段來將半導體晶圓1個片化成晶片。在此情況，藉由擴張表面保護薄片7或黏著薄片13，而可將黏晶用接著薄膜3個片化成各回路。 Further, before the (d') project, the semiconductor wafer 1 may be subjected to an impact, and the semiconductor field may be sliced into a wafer by using a modified field as a trigger. In this case, by expanding the surface protective sheet 7 or the adhesive sheet 13, three layers of the adhesive film can be formed into individual circuits.
在擴張工程時，藉由使黏晶用接著薄片3維持在較佳的情況為15℃以下，而更佳的情況為，藉由維持在-10~10℃，由於擴張所產生的應力(擴張力)對晶片間的接著薄片也變得容易傳 播，接著薄膜變形，將接著薄膜個片化成各晶片變得容易。擴張以1~300mm/秒的速度來進行為佳。 In the case of expansion, it is preferable to maintain the adhesive sheet 3 at a temperature of 15 ° C or less, and more preferably, it is maintained at -10 to 10 ° C, and the stress due to expansion (expansion) Force) also becomes easy to pass on the subsequent sheets between wafers After the filming, and then the film is deformed, it becomes easy to form the film into individual wafers. The expansion is preferably performed at a speed of 1 to 300 mm/sec.
(e’)工程 (e’) project
(e’)工程係在(c’)工程之後，且在(d’)工程之前進行，在(e’)工程，從晶圓反面側照入雷射光，而在晶圓形成將各回路區劃之改良領域層。在(c’)工程中，晶圓被反面研磨，晶圓的厚度變地充分薄，因此在(e’)工程中，雷射光的集光點可以不用設定在晶圓的表面附近。除了雷射集光點以外的條件，係同於(e)工程，因此省略說明。 (e') Engineering is performed after (c') engineering and before (d') engineering. In (e') engineering, laser light is irradiated from the opposite side of the wafer, and each loop is divided in wafer formation. Improved domain layer. In the (c') project, the wafer is back-polished and the thickness of the wafer is sufficiently thin. Therefore, in the (e') project, the light collecting point of the laser light can be set not to be near the surface of the wafer. Conditions other than the laser light collecting point are the same as (e) engineering, and thus the description is omitted.
藉由上述(a’)~(g’)工程，可得到具有接著薄膜之半導體晶片。 By the above (a') to (g') engineering, a semiconductor wafer having a subsequent film can be obtained.
藉由上述與本發明有關之第1、第2半導體晶片的製造方法而得到的具有接著薄膜之半導體晶片，接下來，被選取。具有接著薄膜之半導體晶片，可以直接從表面保護薄片7或是黏著薄片13進行，也可將接著薄膜從表面保護薄片7或是黏著薄片13轉印至其他黏著薄片後，從該其他黏著薄片選取具有接著薄膜之晶片。做為如此之其他的黏著薄片，以具有適度的感壓接著性與再剝離性之黏著薄片為佳，特別是從以往做為切割薄片使用之紫外線型黏著薄片被喜好使用。 The semiconductor wafer having the adhesive film obtained by the above-described first and second semiconductor wafer manufacturing methods according to the present invention is selected next. The semiconductor wafer having the adhesive film can be directly processed from the surface protective sheet 7 or the adhesive sheet 13, or the adhesive film can be transferred from the surface protective sheet 7 or the adhesive sheet 13 to other adhesive sheets, and then selected from the other adhesive sheets. A wafer having a film followed by a film. As such other adhesive sheets, it is preferable to use an adhesive sheet having a moderate pressure-sensitive adhesive property and re-peelability, and in particular, an ultraviolet-type adhesive sheet which has been conventionally used as a cut sheet is preferably used.
具有接著薄膜之晶片的選取，可使用吸引夾頭等之週知的手法來進行。又，根據必要，也可以頂出針，從黏著薄片13或其他黏著薄片之反面側將具有接著薄膜之晶片頂出。 The selection of the wafer having the film next can be carried out using a well-known technique such as suction chuck. Further, if necessary, the needle may be ejected to eject the wafer having the adhesive film from the reverse side of the adhesive sheet 13 or other adhesive sheet.
被選取之具有接著薄膜之晶片，可以直接，或是經過晶片的反轉工程後進到下一工程，也可以暫時先保管至轉 印條帶或收納容器內，根據必要而在下一工程使用。 The selected wafer with the film can be transferred to the next project directly or after the reverse engineering of the wafer. In the strip or storage container, use it in the next project as necessary.
然後，將具有接著薄膜之晶片介在接著薄膜3，載置到晶片搭載用基板之電極部等的固定位置。具體而言，將在回路面側具有接著薄膜3之晶片以面朝下方式，載置到既定的晶片搭載用基板。對於具有凸塊之晶片，使其凸塊與晶片搭載用基板上之相對應的端子部呈對面而載製。 Then, the wafer having the adhesive film is placed on the adhesive film 3 and placed on a fixed position of the electrode portion of the wafer mounting substrate or the like. Specifically, the wafer having the bonding film 3 on the circuit surface side is placed face down on a predetermined wafer mounting substrate. In the wafer having the bumps, the bumps are placed opposite to the terminal portions on the wafer mounting substrate.
之後，將黏晶後之具有接著薄膜之晶片加熱，使晶片與晶片搭載用基板強固接著。接著薄膜3，係由上述藉由加熱而顯現接著性之B級樹脂、黏接著劑或是熱塑性樹脂等所形成。藉由將其在既定條件加熱，若為B級樹脂，藉由樹脂的硬化顯現接著性，或是若為黏接著劑，可藉由包含於此之熱固性樹脂的硬化而顯現接著性。又，若為熱塑性樹脂，可藉由熱封而顯現接著力。 Thereafter, the wafer having the bonding film after the bonding is heated to strengthen the wafer and the wafer mounting substrate. Next, the film 3 is formed of the above-mentioned B-grade resin which exhibits adhesiveness by heating, an adhesive, or a thermoplastic resin. By heating it under a predetermined condition, if it is a B-grade resin, adhesion is exhibited by curing of the resin, or if it is an adhesive, adhesion can be exhibited by hardening of the thermosetting resin contained therein. Further, in the case of a thermoplastic resin, the adhesion can be expressed by heat sealing.
如此而黏晶(倒晶封裝)後，可根據必要，經過樹脂封裝等之通常的工程而得到半導體裝置。 After the die bonding (dip crystal sealing), the semiconductor device can be obtained by a usual process such as resin encapsulation as necessary.
以上，對於本發明之半導體晶片的製造方法，依照圖式說明，但本發明並不限定於上述構成之半導體晶片的製造方法，可適用於具有各種構成之半導體晶片的製造方法。 Although the method of manufacturing the semiconductor wafer of the present invention has been described with reference to the drawings, the present invention is not limited to the method for manufacturing a semiconductor wafer having the above configuration, and is applicable to a method for manufacturing a semiconductor wafer having various configurations.
1‧‧‧半導體晶圓 1‧‧‧Semiconductor wafer
2‧‧‧凸塊 2‧‧‧Bumps
3‧‧‧黏晶用接著薄膜 3‧‧‧Adhesive film
4‧‧‧支持薄膜 4‧‧‧Support film
5‧‧‧環狀框架 5‧‧‧Ring frame
7‧‧‧表面保護薄片 7‧‧‧Surface protection sheet
10‧‧‧半導體晶片 10‧‧‧Semiconductor wafer
13‧‧‧黏著薄片 13‧‧‧Adhesive sheets
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| KR102376834B1 (en) * | 2014-11-13 | 2022-03-21 | 닛뽕소다 가부시키가이샤 | Negative electrode composition for electric storage device, negative electrode including the composition, electric storage device, and method for producing negative electrode for electric storage device |
| JP6456766B2 (en) * | 2015-05-08 | 2019-01-23 | 株式会社ディスコ | Wafer processing method |
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