TW201448032A - Plasma processing device - Google Patents
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本發明涉及半導體加工設備，特別涉及一種等離子體處理裝 置。This invention relates to semiconductor processing equipment, and more particularly to a plasma processing apparatus.
近年來，隨著半導體製造工藝的發展，對元件的集成度和性 能要求越來越高，等離子體技術（Plasma Technology）得到了極為廣泛的應用。等離子體技術通過在等離子體處理裝置的反應腔室內通入反應氣體並引入電子流，利用射頻電場使電子加速，與反應氣體發生碰撞使反應氣體發生電離而等離子體，產生的等離子體可被用於各種半導體製造工藝，例如沉積工藝（如化學氣相沉積）、刻蝕工藝（如乾法刻蝕）等。In recent years, with the development of semiconductor manufacturing processes, the integration and performance requirements of components have become higher and higher, and Plasma Technology has been widely used. Plasma technology uses a radio frequency electric field to accelerate electrons by introducing a reaction gas into a reaction chamber of a plasma processing apparatus and introducing a flow of electrons. The reaction gas collides with the reaction gas to ionize the plasma, and the generated plasma can be used. In various semiconductor manufacturing processes, such as deposition processes (such as chemical vapor deposition), etching processes (such as dry etching), and the like.
等離子體處理工藝經常採用電容耦合型等離子體處理裝置 來產生等離子體。圖1示出一種電容耦合型等離子體處理裝置的結構示意圖。如圖1所示，等離子體處理裝置的反應腔室1內平行設置有一對平板式的上電極2和下電極3，上電極配置於反應氣體噴淋頭4中，下電極配置於靜電夾盤5中，待處理基片6放置於靜電夾盤5上。通過在平行設置的平板式下電極3中施加高頻射頻，將上電極2接地，使得上電極2和下電極3間形成垂直方向的射頻電場，被射頻電場加速的電子與反應氣體的分子發生電離衝撞，對反應氣體電離以生成等離子體。Plasma processing processes often employ capacitively coupled plasma processing devices to generate plasma. FIG. 1 is a schematic view showing the structure of a capacitive coupling type plasma processing apparatus. As shown in FIG. 1, a pair of flat upper electrodes 2 and lower electrodes 3 are arranged in parallel in the reaction chamber 1 of the plasma processing apparatus. The upper electrode is disposed in the reactive gas shower head 4, and the lower electrode is disposed on the electrostatic chuck. In 5, the substrate 6 to be processed is placed on the electrostatic chuck 5. The upper electrode 2 is grounded by applying a high-frequency radio frequency in the parallel plate-type lower electrode 3, so that a vertical radio frequency electric field is formed between the upper electrode 2 and the lower electrode 3, and electrons excited by the radio frequency electric field and molecules of the reaction gas are generated. The ionization collision strikes the reaction gas to generate a plasma.
然而在實際應用中，使用電容耦合型的等離子體處理裝置產 生的等離子體密度的均勻性並不理想。由於電容耦合的結構特性，反應腔室內中間區域和邊緣區域的電場強度存在差異，所產生的等離子體的密度具有中間區域高於邊緣區域的特徵分佈，而由於對基片進行等離子體處理的速率與該等離子體密度相關，最終會造成等離子體處理工藝不均勻的情況：例如，基片中間刻蝕或處理速率快、邊緣刻蝕或處理速率慢。這對半導體器件製造的工藝控制及成品率都有很大影響。因此，如何改善等離子體處理裝置中等離子體密度的均勻性是本領域技術人員目前急需解決的技術問題。However, in practical applications, the uniformity of plasma density generated by a capacitively coupled plasma processing apparatus is not satisfactory. Due to the structural characteristics of capacitive coupling, the electric field strengths of the intermediate and edge regions of the reaction chamber are different, and the density of the generated plasma has a characteristic distribution of the intermediate region higher than the edge region, and the rate of plasma treatment of the substrate In connection with this plasma density, the plasma processing process may eventually be uneven: for example, the substrate is etched or processed at a high rate, the edge is etched, or the processing rate is slow. This has a great impact on the process control and yield of semiconductor device manufacturing. Therefore, how to improve the uniformity of the plasma density in the plasma processing apparatus is a technical problem that is urgently needed to be solved by those skilled in the art.
為解決這一問題，習知技術中的一種做法為在靜電夾盤周圍 設置連接第二射頻功率源的閉合導電環，通過第二射頻電源在閉合導電環上方形成環狀的第二電場，之後再調節第二射頻功率源的參數，使得環形的第二電場與下電極上方的電場相互疊加，來改善靜電夾盤邊緣區域的電場分佈，使待處理基片的中心區域和邊緣區域的等離子體密度具有較好的一致性和均勻性。然而，對於反應腔室內包括具有導電性材料的元件，例如聚焦環來說，這一疊加的垂直方向的射頻電場會加劇等離子體對聚焦環的轟擊，很可能會造成聚焦環的損壞。To solve this problem, one of the prior art techniques is to provide a closed conductive ring connecting the second RF power source around the electrostatic chuck, and forming a ring-shaped second electric field above the closed conductive ring by the second RF power source, after which The parameter of the second RF power source is further adjusted such that the second electric field of the ring and the electric field above the lower electrode are superimposed on each other to improve the electric field distribution in the edge region of the electrostatic chuck, and the plasma in the central region and the edge region of the substrate to be processed Density has good consistency and uniformity. However, for components in the reaction chamber that include a conductive material, such as a focus ring, this superimposed vertical RF electric field can exacerbate the bombardment of the focus ring by the plasma, potentially causing damage to the focus ring.
本發明的主要目的在於克服習知技術的缺陷，提供一種能夠 獲得分佈較為均勻的等離子體密度的等離子體處理裝置。更進一步的，提供一種可延長聚焦環壽命的等離子體處理裝置。SUMMARY OF THE INVENTION A primary object of the present invention is to overcome the deficiencies of the prior art and to provide a plasma processing apparatus capable of obtaining a plasma distribution having a relatively uniform distribution. Still further, a plasma processing apparatus that extends the life of a focus ring is provided.
為達成上述目的，本發明提供一種等離子體處理裝置，其包 括反應腔室，第一射頻功率源和第二射頻功率源，其中反應腔室內包括用於夾持待處理基片的靜電夾盤；用於向所述反應腔室內部輸入制程氣體的氣體噴淋頭；相互平行設置的上電極和下電極，所述上電極設置在所述氣體噴淋頭內，所述下電極設於所述靜電夾盤內；所述第一射頻功率源和第二射頻功率源通過第一射頻匹配器與所述下電極相連，所述第一射頻功率源用以提供射頻功率在所述上電極和所述下電極之間形成垂直方向的射頻電場以激發工藝氣體產生等離子體，所述第二射頻功率源用以調整所述等離子體的能量；所述反應腔室還包括環形絕緣體，其環繞所述靜電夾盤和/或所述靜電夾盤的上方區域；以及由導線捲繞而成的開口金屬環電極，嵌設於所述環形絕緣體中，所述開口金屬環電極通有射頻電流以產生水平方向的感應電場。To achieve the above object, the present invention provides a plasma processing apparatus including a reaction chamber, a first RF power source and a second RF power source, wherein the reaction chamber includes an electrostatic chuck for holding a substrate to be processed; a gas shower head for inputting a process gas to the inside of the reaction chamber; an upper electrode and a lower electrode disposed in parallel with each other, the upper electrode being disposed in the gas shower head, and the lower electrode being disposed in the The first RF power source and the second RF power source are connected to the lower electrode through a first RF matching device, and the first RF power source is configured to provide RF power at the upper electrode and the Forming a vertical direction RF electric field between the electrodes to excite the process gas to generate a plasma, the second RF power source for adjusting the energy of the plasma; the reaction chamber further includes an annular insulator surrounding the An electrostatic chuck and/or an upper region of the electrostatic chuck; and an open metal ring electrode wound by a wire embedded in the annular insulator, the open metal ring Pole through radio frequency current to generate an induced electric field in the horizontal direction.
較佳地，所述反應腔室還包括聚焦環和用於支撐所述聚焦環 的支撐環，所述聚焦環環繞所述基片，所述支撐環位於所述聚焦環下方並環繞所述靜電夾盤；所述絕緣環為所述環形絕緣體，所述開口金屬環電極水平嵌設於所述支撐環內。Preferably, the reaction chamber further includes a focus ring and a support ring for supporting the focus ring, the focus ring surrounds the substrate, the support ring is located below the focus ring and surrounds the static electricity a chuck; the insulating ring is the annular insulator, and the open metal ring electrode is horizontally embedded in the support ring.
較佳地，所述支撐環的橫截面為L形或矩形。Preferably, the support ring has an L-shaped or rectangular cross section.
較佳地，所述反應腔室還包括等離子體約束組件，其包含多 個在垂直方向上相互堆疊並相互平行間隔設置的同心環，所述等離子體約束組件環繞所述靜電夾盤上方的區域；所述等離子體約束元件中的至少一個同心環為所述環形絕緣體。Preferably, the reaction chamber further includes a plasma confinement assembly including a plurality of concentric rings stacked in a vertical direction and spaced apart from each other, the plasma confinement assembly surrounding an area above the electrostatic chuck At least one concentric ring of the plasma confinement elements is the annular insulator.
較佳地，所述等離子體約束組件中的多個同心環為所述環形 絕緣體，所述多個同心環中分別水平嵌設所述開口金屬環電極。Preferably, a plurality of concentric rings in the plasma confinement assembly are the annular insulator, and the open metal ring electrodes are horizontally embedded in the plurality of concentric rings.
較佳地，多個所述開口金屬環電極相互串聯或並聯或混聯。Preferably, a plurality of said open metal ring electrodes are connected in series or in parallel or mixed with each other.
較佳地，所述射頻電流由施加於所述開口金屬環電極的第三 射頻功率源產生，所述第三射頻功率源的頻率為低頻。Preferably, the RF current is generated by a third RF power source applied to the open metal ring electrode, the frequency of the third RF power source being a low frequency.
較佳地，所述第三射頻功率源通過第二射頻匹配器連接所述 開口金屬環電極的一端，以在所述開口金屬環電極中產生所述射頻電流；所述開口金屬環電極的另一端接地。Preferably, the third RF power source is connected to one end of the open metal ring electrode through a second RF matching device to generate the RF current in the open metal ring electrode; One end is grounded.
較佳地，所述第一射頻匹配器包括功率分配器，所述第二射 頻功率源通過所述功率分配器與所述開口金屬環電極的一端相連，以在所述開口金屬環電極上施加所述第三射頻功率源並產生所述射頻電流；所述開口金屬環電極的另一端接地。Preferably, the first RF matcher includes a power splitter, and the second RF power source is connected to one end of the open metal ring electrode through the power splitter to apply on the open metal ring electrode The third RF power source generates the RF current; the other end of the open metal ring electrode is grounded.
較佳地，所述功率分配器為可調電容。Preferably, the power splitter is a tunable capacitor.
較佳地，所述可調電容的範圍為小於1000pF。Preferably, the adjustable capacitance ranges from less than 1000 pF.
較佳地，所述第三射頻功率源的頻率小於等於13.56MHz。Preferably, the frequency of the third RF power source is less than or equal to 13.56 MHz.
較佳地，所述第二射頻功率源的頻率小於等於13.56MHz， 所述第一射頻功率源的頻率高於所述第二射頻功率源的頻率。Preferably, the frequency of the second RF power source is less than or equal to 13.56 MHz, and the frequency of the first RF power source is higher than the frequency of the second RF power source.
較佳地，所述上電極與所述下電極為平板式電極。Preferably, the upper electrode and the lower electrode are flat electrodes.
較佳地，所述開口金屬環電極為導線捲繞1圈或2圈而成。Preferably, the open metal ring electrode is formed by winding one or two turns of the wire.
較佳地，所述環形絕緣體的材料選自石英或陶瓷。Preferably, the material of the annular insulator is selected from quartz or ceramic.
相較於習知技術，本發明的等離子體處理裝置其有益效果在 於：本發明通過在基片周圍或周圍上方設置通有射頻電流的開口金屬環電極，使反應腔室內產生水平方向的感應電場，來補償基片邊緣區域的等離子體密度，進而使得等離子體處理工藝均勻。此外，通過在金屬環中通入低頻的射頻電流，使得金屬環與腔室上電極之間產生的垂直方向的電場非常小，因此不會對聚焦環造成更劇烈的等離子體轟擊，可有效延長聚焦環的使用壽命。Compared with the prior art, the plasma processing apparatus of the present invention has the beneficial effects that the present invention generates a horizontal induced electric field in the reaction chamber by providing an open metal ring electrode with a radio frequency current around or around the substrate. To compensate for the plasma density in the edge region of the substrate, thereby making the plasma processing process uniform. In addition, by passing a low-frequency RF current into the metal ring, the vertical electric field generated between the metal ring and the upper electrode of the chamber is very small, so that no more intense plasma bombardment is caused to the focus ring, which can be effectively extended. The life of the focus ring.
為使本發明的內容更加清楚易懂，以下結合說明書附圖，對 本發明的內容作進一步說明。當然本發明並不局限於該具體實施例，本領域內的技術人員所熟知的一般替換也涵蓋在本發明的保護範圍內。In order to make the content of the present invention clearer and easier to understand, the contents of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the invention is not limited to the specific embodiment, and general replacements well known to those skilled in the art are also encompassed within the scope of the invention.
圖2~圖4顯示了本發明的等離子處理裝置的多個實施方 式。應該理解，本發明中的等離子體處理裝置可以為等離子體刻蝕、等離子體物理汽相沉積、等離子體化學汽相沉積、等離子體表面清洗等裝置，等離子體處理裝置僅僅是示例性的，其可以包括更少或更多的組成元件，或該組成元件的安排可能與圖中所示相同或不同。2 to 4 show various embodiments of the plasma processing apparatus of the present invention. It should be understood that the plasma processing apparatus in the present invention may be a device such as plasma etching, plasma physical vapor deposition, plasma chemical vapor deposition, plasma surface cleaning, etc., and the plasma processing apparatus is merely exemplary, and Fewer or more constituent elements may be included, or the arrangement of the constituent elements may be the same or different from that shown in the figures.
實施例1 請參見圖2，其所示為本實施例等離子體處理腔室的結構示意圖。等離子體處理裝置包括反應腔室10，其中引入有反應氣體；反應腔室10的頂部設置有反應氣體噴淋頭11，反應氣體噴淋頭11包含平板式的上電極21，該上電極21接地；反應腔室10底部設置有用於夾持基片30的靜電夾盤12，該基片30可以是待要刻蝕或加工的半導體基片或者待要加工成平板顯示器的玻璃平板。靜電夾盤12中設置有與上電極21平行的平板式的下電極22。下電極22通過第一射頻匹配器41與第一射頻源40a和第二射頻源40b連接。第一射頻源40a和第二射頻源40b施加在下電極22上，第一射頻源40a使得上電極21和下電極22之間形成垂直方向的射頻電場，被射頻電場加速的電子與反應氣體的分子發生電離衝撞，對反應氣體電離以生成等離子體。同時第二射頻源40b對等離子體作電場力作用，調整等離子體的能量，將等離子體打在基片30表面上。第一射頻源40a的頻率越高，產生的等離子體密度也就越大，一般來說，第一射頻源40a的頻率為高頻，例如為40MHz，60MHz或120MHz。第二射頻源40b的頻率較低，例如為400KHz，2MHz或13.56MHz。為了改善等離子體密度分佈，本發明在靜電夾盤12周圍或周圍上方設置開口金屬環電極23。為避免開口金屬環電極23暴露在等離子體環境中，將開口金屬環電極23嵌設於環形絕緣體內。環形絕緣體的材料例如是陶瓷或石英等絕緣材料。環形絕緣體可環繞在靜電夾盤12或靜電夾盤12上方區域或環繞在靜電夾盤12及其上方區域。靜電夾盤12與開口金屬環電極23較佳為同圓心設置。請結合圖3所示，開口金屬環電極23由導線捲繞而成，較佳的，開口金屬環電極為捲繞1圈或2圈。導線較佳選用銅線，其具有導電率高、不易氧化及損耗小的優點。開口金屬環電極23中通有射頻電流I，射頻電流I由施加於金屬環的第三射頻功率源42產生。根據法拉第定律，該射頻電流產生交變的磁場，而交變的磁場又會感應產生與前述射頻電流I方向相反的水平方向的感應電場E’。如圖3所示，在某一時刻，開口金屬環電極23具有如箭頭所示的感應電場E’。由圖中可知，該感應電場為沿開口金屬環電極23圓周的水平方向，因此，在開口金屬環電極23所處位置，也即是反應腔室邊緣區域的電場強度得以增強，這樣邊緣區域的等離子體密度將增加，從而提升了等離子體密度分佈的均勻性。Embodiment 1 Referring to Figure 2, there is shown a schematic structural view of a plasma processing chamber of the present embodiment. The plasma processing apparatus includes a reaction chamber 10 into which a reaction gas is introduced; a reaction gas shower head 11 is disposed at the top of the reaction chamber 10, and the reaction gas shower head 11 includes a flat upper electrode 21, and the upper electrode 21 is grounded. The bottom of the reaction chamber 10 is provided with an electrostatic chuck 12 for holding the substrate 30, which may be a semiconductor substrate to be etched or processed or a glass plate to be processed into a flat panel display. A flat-plate lower electrode 22 parallel to the upper electrode 21 is provided in the electrostatic chuck 12. The lower electrode 22 is connected to the first RF source 40a and the second RF source 40b through the first RF matcher 41. The first RF source 40a and the second RF source 40b are applied to the lower electrode 22, and the first RF source 40a forms a vertical RF electric field between the upper electrode 21 and the lower electrode 22, and the molecules of the electron and the reaction gas accelerated by the RF electric field. An ionizing collision occurs, and the reaction gas is ionized to generate a plasma. At the same time, the second RF source 40b acts as an electric field force on the plasma to adjust the energy of the plasma to strike the plasma on the surface of the substrate 30. The higher the frequency of the first RF source 40a, the greater the plasma density produced. Generally, the frequency of the first RF source 40a is a high frequency, for example, 40 MHz, 60 MHz or 120 MHz. The second RF source 40b has a lower frequency, for example 400 KHz, 2 MHz or 13.56 MHz. In order to improve the plasma density distribution, the present invention provides an open metal ring electrode 23 around or around the electrostatic chuck 12. In order to prevent the open metal ring electrode 23 from being exposed to the plasma environment, the open metal ring electrode 23 is embedded in the annular insulator. The material of the annular insulator is, for example, an insulating material such as ceramic or quartz. The annular insulator can wrap around the area of the electrostatic chuck 12 or the electrostatic chuck 12 or surround the electrostatic chuck 12 and its upper area. The electrostatic chuck 12 and the open metal ring electrode 23 are preferably disposed at the same center. Referring to FIG. 3, the open metal ring electrode 23 is wound by a wire. Preferably, the open metal ring electrode is wound one turn or two turns. The wire is preferably a copper wire, which has the advantages of high conductivity, low oxidation resistance, and low loss. An RF current I is passed through the open metal ring electrode 23, and the RF current I is generated by a third RF power source 42 applied to the metal ring. According to Faraday's law, the RF current produces an alternating magnetic field, which in turn induces a horizontal induced electric field E' opposite the direction of the RF current I. As shown in Fig. 3, at some point, the open metal ring electrode 23 has an induced electric field E' as indicated by an arrow. As can be seen from the figure, the induced electric field is in the horizontal direction along the circumference of the open metal ring electrode 23, and therefore, the electric field strength at the position where the open metal ring electrode 23 is located, that is, the edge portion of the reaction chamber is enhanced, so that the edge region is The plasma density will increase, thereby increasing the uniformity of the plasma density distribution.
由於開口金屬環電極23中流通的射頻電流是由第三射頻功 率源42產生，而該第三射頻功率源42也可能會在開口金屬環電極23與上電極21之間產生垂直方向的射頻電場，當第三射頻功率源42的頻率越高，則開口金屬環電極23與上電極21之間產生的射頻電場強度也越大，而這一大的射頻電場與上電極21和下電極22之間的射頻電場疊加，就容易引起等離子體轟擊的加劇造成反應腔室10內的含導電性材料的元件，如聚焦環的損壞。因此，較佳的，施加在開口金屬環電極23上的第三射頻功率源42為低頻，其頻率例如是小於等於13.56MHz。由於第三射頻功率源42頻率較低，開口金屬環電極23與上電極21之間形成的射頻電場強度也非常小，甚至可忽略不計，因此就能夠有效避免等離子體轟擊的加劇，延長具有導電性材料的元件的使用壽命。Since the RF current flowing in the open metal ring electrode 23 is generated by the third RF power source 42, the third RF power source 42 may also generate a vertical RF electric field between the open metal ring electrode 23 and the upper electrode 21. When the frequency of the third RF power source 42 is higher, the RF electric field intensity generated between the open metal ring electrode 23 and the upper electrode 21 is also greater, and the large RF electric field and the upper electrode 21 and the lower electrode 22 are The superposition of the RF electric field between them easily causes the intensification of the plasma bombardment to cause damage to the conductive material-containing components in the reaction chamber 10, such as the focus ring. Therefore, preferably, the third RF power source 42 applied to the open metal ring electrode 23 is a low frequency, and its frequency is, for example, 13.56 MHz or less. Since the frequency of the third RF power source 42 is low, the intensity of the RF electric field formed between the open metal ring electrode 23 and the upper electrode 21 is also very small, even negligible, so that the intensification of the plasma bombardment can be effectively avoided, and the conduction is prolonged. The service life of components of a material.
請繼續參考圖2，在本發明的一實施例中，反應腔室內還包 括聚焦環13和支撐環14。聚焦環13設於待處理的基片30周圍，用以在基片30的周圍提供一個相對封閉的環境，約束等離子體以改善基片30面上的等離子體的均一性。支撐環14位於聚焦環下方，其環繞於靜電夾盤12，可起到固定和支撐聚焦環13的作用。其中，支撐環14的橫截面形狀例如是L形或矩形，其內側壁與靜電夾盤12的外側壁盡可能的緊密貼合，防止等離子體打在靜電夾盤12的表面上，保護靜電夾盤12免受損耗。支撐環14可採用陶瓷或石英等絕緣材料形成。在本實施例中，將支撐環14作為環形絕緣體，開口金屬環電極23水平嵌設與支撐環14中，由此可在靜電夾盤的邊緣區域形成水平方向的感應電場，從而能夠補償基片邊緣區域的等離子體密度。With continued reference to Figure 2, in one embodiment of the invention, the reaction chamber also includes a focus ring 13 and a support ring 14. A focus ring 13 is provided around the substrate 30 to be treated to provide a relatively closed environment around the substrate 30, confining the plasma to improve the uniformity of the plasma on the surface of the substrate 30. The support ring 14 is located below the focus ring, which surrounds the electrostatic chuck 12 and functions to secure and support the focus ring 13. Wherein, the cross-sectional shape of the support ring 14 is, for example, L-shaped or rectangular, and the inner side wall is closely adhered to the outer side wall of the electrostatic chuck 12 as much as possible to prevent plasma from hitting the surface of the electrostatic chuck 12, and the electrostatic clamp is protected. The disk 12 is protected from wear and tear. The support ring 14 may be formed of an insulating material such as ceramic or quartz. In the present embodiment, the support ring 14 is used as an annular insulator, and the open metal ring electrode 23 is horizontally embedded in the support ring 14, thereby forming a horizontal induced electric field in the edge region of the electrostatic chuck, thereby compensating the substrate. Plasma density in the edge region.
此外，在本實施例中，施加於開口金屬環電極的低頻的第三 射頻功率源可以是由第二射頻功率源經功率分配器分配後產生，也可以是獨立的一個低頻的射頻功率源。具體來說，如圖2及圖3所示，在本實施例中，第三射頻功率源42為獨立的射頻功率源，則開口金屬環電極23一端通過第二射頻匹配器43連接至第三射頻功率源42，另一端直接或間接接地。當然，在其他實施例中，第三射頻功率源42不是獨立的射頻功率源，則此時第一射頻匹配器41中設有功率分配器，功率分配器可選用可調電容，負責調節分配第二射頻功率源40b施加到開口金屬環電極23的射頻功率。開口金屬環電極23的一端通過功率分配器連接至第二射頻功率源40b，另一端直接或間接接地。可調電容的取值範圍為小於1000pF。In addition, in this embodiment, the low frequency third RF power source applied to the open metal ring electrode may be generated by the second RF power source after being distributed by the power splitter, or may be an independent low frequency RF power source. Specifically, as shown in FIG. 2 and FIG. 3, in the embodiment, the third RF power source 42 is an independent RF power source, and one end of the open metal ring electrode 23 is connected to the third through the second RF matcher 43. The RF power source 42 has the other end directly or indirectly grounded. Of course, in other embodiments, the third RF power source 42 is not an independent RF power source. In this case, the first RF matcher 41 is provided with a power splitter, and the power splitter can be adjusted with a tunable capacitor. The RF power source 40b is applied to the RF power of the open metal ring electrode 23. One end of the open metal ring electrode 23 is connected to the second RF power source 40b through a power splitter, and the other end is directly or indirectly grounded. Adjustable capacitors range from less than 1000pF.
由以上可知，本實施例中通過在環繞靜電夾盤12的支撐環 14中水平嵌設通有射頻電流的開口金屬環電極23，使得靜電夾盤12邊緣區域產生水平方向的感應電場。這樣，基片30中心區域和邊緣區域的等離子體密度能夠得到調整而變得大致接近，進而在進行等離子體處理時能得到較佳的處理均勻度，如蝕刻的速率的均勻度。As apparent from the above, in the present embodiment, the horizontally induced electric field is generated in the edge region of the electrostatic chuck 12 by horizontally embedding the open metal ring electrode 23 through which the radio frequency current is applied in the support ring 14 surrounding the electrostatic chuck 12. Thus, the plasma density of the central region and the edge region of the substrate 30 can be adjusted to be substantially close, thereby achieving better processing uniformity, such as uniformity of etching rate, during plasma processing.
實施例2 圖4是本發明所提供的種等離子體處理裝置另一實施例的結構示意圖，圖4所示的實施例可以獨立設置或與上述實施例一起結合應用。Embodiment 2 FIG. 4 is a schematic structural view of another embodiment of a plasma processing apparatus according to the present invention. The embodiment shown in FIG. 4 can be independently provided or used in combination with the above embodiments.
本實施例與實施例1的不同點在於，本實施例中的反應腔室 包含等離子體約束組件15，其包含多個垂直方向上相互堆疊並相互平行間隔設置的同心環15a，這些同心環15a環繞靜電夾盤上方區域，也即是上電極21和下電極22之間的區域，該區域可認為是等離子體形成、對基片30作處理的反應區域P。相鄰的同心環15a之間具有縫隙，在對基片30作等離子體處理時，處理過的反應氣體可以通過縫隙被排出反應區域P，而等離子體卻能被約束在此反應區域P內。同心環15a可以由各種抗等離子體腐蝕的材料製成，例如，石英或陶瓷。為了同時利用本發明的設計，等離子體約束元件15中至少一個同心環15a可以設計為前述的嵌設有開口金屬環電極23的環形絕緣體，其中開口金屬環電極23通有射頻電流。與實施例1中的作用原理類似，開口金屬環電極23由導線捲繞而成，較佳為捲繞1圈或2圈，其中流通的射頻電流產生交變的磁場並進一步產生沿金屬環圓周、水平方向的感應電場。該感應電場補償了開口金屬環電極23附近，也即是反應區域P邊緣區域的電場強度，使得反應區域P邊緣區域的等離子體密度增加，從而提升了基片30上方不同位置等離子體密度分佈的均勻性。開口金屬環電極23中的射頻電流同樣是由施加在其上的第三射頻功率源42產生。在一具體實施例中，等離子體約束組件15中多個同心環15a為環形絕緣體，其中分別水平嵌設開口金屬環電極23，在此情況下，這些開口金屬環電極23可以是串聯或並聯或混聯至第三射頻功率源42。較佳的，第三射頻功率源42為低頻功率源，其頻率例如是小於等於13.56MHz。由此，開口金屬環電極23與上電極21之間形成的射頻電場強度也非常小，甚至可忽略不計，因此就能夠有效避免等離子體轟擊的加劇，延長反應腔室內導體元件的使用壽命。該第三射頻功率源42可以是由第二射頻功率源40b經功率分配器分配後施加在開口金屬環電極23的射頻功率源，也可以是獨立的第三射頻功率源42。第三射頻功率源42的設置與上述實施例相同，在此不予贅述。The present embodiment is different from Embodiment 1 in that the reaction chamber in the present embodiment includes a plasma confinement assembly 15 including a plurality of concentric rings 15a stacked in a vertical direction and spaced apart from each other in parallel, and these concentric rings 15a Surrounding the area above the electrostatic chuck, that is, the area between the upper electrode 21 and the lower electrode 22, this area can be considered as a reaction area P in which plasma is formed and the substrate 30 is processed. There is a gap between the adjacent concentric rings 15a. When the substrate 30 is subjected to plasma treatment, the treated reaction gas can be discharged out of the reaction region P through the slit, and the plasma can be confined in the reaction region P. The concentric rings 15a can be made of various materials that are resistant to plasma corrosion, such as quartz or ceramic. In order to simultaneously utilize the design of the present invention, at least one concentric ring 15a of the plasma confinement element 15 can be designed as the aforementioned annular insulator with an open metal ring electrode 23 embedded therein, wherein the open metal ring electrode 23 is fused with a radio frequency current. Similar to the principle of operation in Embodiment 1, the open metal ring electrode 23 is formed by winding a wire, preferably one or two turns, in which a circulating RF current generates an alternating magnetic field and further produces a circumference along the circumference of the metal ring. The induced electric field in the horizontal direction. The induced electric field compensates for the electric field strength near the open metal ring electrode 23, that is, the edge region of the reaction region P, so that the plasma density of the edge region of the reaction region P increases, thereby increasing the plasma density distribution at different positions above the substrate 30. Uniformity. The RF current in the open metal ring electrode 23 is also generated by a third RF power source 42 applied thereto. In a specific embodiment, the plurality of concentric rings 15a in the plasma confinement assembly 15 are annular insulators, wherein the open metal ring electrodes 23 are horizontally embedded, respectively, in which case the open metal ring electrodes 23 may be connected in series or in parallel or Mixed to a third RF power source 42. Preferably, the third RF power source 42 is a low frequency power source whose frequency is, for example, 13.56 MHz or less. Therefore, the intensity of the radio frequency electric field formed between the open metal ring electrode 23 and the upper electrode 21 is also very small, even negligible, so that the intensification of the plasma bombardment can be effectively avoided, and the service life of the conductor elements in the reaction chamber can be prolonged. The third RF power source 42 may be a radio frequency power source applied to the open metal ring electrode 23 after being distributed by the second RF power source 40b via the power splitter, or may be an independent third RF power source 42. The setting of the third RF power source 42 is the same as that of the above embodiment, and details are not described herein.
綜上所述，本發明的等離子體處理裝置，通過在環繞基片或 基片上方區域設置通有射頻電流的開口金屬環電極，在反應腔室內的邊緣區域生成水平方向的感應電場，從而補償原有的上下電極之間的射頻電場在反應腔室內中心區域及邊緣區域分佈不均勻的影響，使對應的基片中心區域及邊緣區域的等離子體密度均勻分佈，進而使等離子體對基片的處理更均勻。此外，由於在開口金屬環電極中產生射頻電流的射頻功率源為低頻，使得開口金屬環電極與上電極之間幾乎不會產生垂直方向的射頻電場，也就不會加劇等離子體對腔室中具有導電性材料的元件（如聚焦環）的轟擊，從而還可以明顯延長導電性材料元件（如聚焦環）的使用壽命。In summary, the plasma processing apparatus of the present invention compensates by generating an induced electric field in a horizontal direction in an edge region of the reaction chamber by providing an open metal ring electrode having a radio frequency current in a region surrounding the substrate or the substrate. The RF electric field between the original upper and lower electrodes is unevenly distributed in the central region and the edge region of the reaction chamber, so that the plasma density of the corresponding substrate central region and the edge region is evenly distributed, thereby making the plasma on the substrate. More uniform processing. In addition, since the RF power source that generates the RF current in the open metal ring electrode is low frequency, the vertical RF electric field is hardly generated between the open metal ring electrode and the upper electrode, and the plasma is not intensified in the chamber. The bombardment of an element having a conductive material, such as a focus ring, can also significantly extend the useful life of a conductive material element such as a focus ring.
雖然本發明已以較佳實施例揭示如上，然所述諸多實施例僅 為了便於說明而舉例而已，並非用以限定本發明，本領域的技術人員在不脫離本發明精神和範圍的前提下可作若干的更動與潤飾，本發明所主張的保護範圍應以申請專利範圍所述為准。The present invention has been described in terms of the preferred embodiments of the present invention, and the present invention is intended to be illustrative only, and is not intended to limit the scope of the invention. To make a number of changes and refinements, the scope of protection claimed by the present invention is subject to the scope of the patent application.
1．．．反應腔室1. . . Reaction chamber
2．．．上電極2. . . Upper electrode
3．．．下電極3. . . Lower electrode
4．．．氣體噴淋頭4. . . Gas shower head
5．．．靜電夾盤5. . . Electrostatic chuck
6．．．基片6. . . Substrate
10．．．反應腔室10. . . Reaction chamber
11．．．反應氣體噴淋頭11. . . Reaction gas shower head
12．．．靜電夾盤12. . . Electrostatic chuck
13．．．聚焦環13. . . Focus ring
14．．．支撐環14. . . Support ring
15．．．等離子體約束組件15. . . Plasma confinement component
15a．．．同心環15a. . . Concentric ring
21．．．上電極twenty one. . . Upper electrode
22．．．下電極twenty two. . . Lower electrode
23．．．開口金屬環電極twenty three. . . Open metal ring electrode
30．．．基片30. . . Substrate
40a．．．第一射頻源40a. . . First RF source
40b．．．第二射頻源40b. . . Second RF source
41．．．第一射頻匹配器41. . . First RF matcher
42．．．第三射頻功率源42. . . Third RF power source
43．．．第二射頻匹配器43. . . Second RF matcher
E’．．．感應電場E’. . . Induced electric field
P．．．反應區域P. . . Reaction area
圖1為習知技術中等離子體處理裝置的結構示意圖； 圖2為本發明一實施例的等離子體處理裝置的結構示意圖； 圖3為本發明一實施例的等離子體處理裝置中開口金屬環電極的示意圖； 圖4為本發明另一實施例的等離子體處理裝置的結構示意圖。1 is a schematic structural view of a plasma processing apparatus in a prior art; FIG. 2 is a schematic structural view of a plasma processing apparatus according to an embodiment of the present invention; FIG. 3 is an open metal ring electrode in a plasma processing apparatus according to an embodiment of the present invention; FIG. 4 is a schematic structural view of a plasma processing apparatus according to another embodiment of the present invention.
10．．．反應腔室10. . . Reaction chamber
11．．．反應氣體噴淋頭11. . . Reaction gas shower head
12．．．靜電夾盤12. . . Electrostatic chuck
13．．．聚焦環13. . . Focus ring
14．．．支撐環14. . . Support ring
21．．．上電極twenty one. . . Upper electrode
22．．．下電極twenty two. . . Lower electrode
23．．．開口金屬環電極twenty three. . . Open metal ring electrode
30．．．基片30. . . Substrate
40a．．．第一射頻源40a. . . First RF source
40b．．．第二射頻源40b. . . Second RF source
41．．．第一射頻匹配器41. . . First RF matcher
42．．．第三射頻功率源42. . . Third RF power source
43．．．第二射頻匹配器43. . . Second RF matcher
Claims (16)
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| CN201310138892.7A CN103227091B (en) | 2013-04-19 | 2013-04-19 | Plasma processing apparatus |
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| TWI514472B TWI514472B (en) | 2015-12-21 |
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| CN104733364B (en) * | 2013-12-23 | 2017-11-03 | 中微半导体设备(上海)有限公司 | A kind of electrostatic chuck |
| CN104752143B (en) * | 2013-12-31 | 2017-05-03 | 中微半导体设备(上海)有限公司 | Plasma treating device |
| CN103792842B (en) * | 2014-01-22 | 2016-08-17 | 清华大学 | A kind of base station that can be used for power field spatial distribution precise controlling and control method |
| CN106611691B (en) * | 2015-10-26 | 2018-10-12 | 中微半导体设备(上海)有限公司 | Multifrequency pulse plasma processing apparatus and its processing method and cleaning method |
| CN107154332B (en) * | 2016-03-03 | 2019-07-19 | 中微半导体设备(上海)股份有限公司 | A kind of plasma processing apparatus and method |
| CN107644802B (en) * | 2016-07-21 | 2019-09-06 | 中微半导体设备(上海)股份有限公司 | Plasma etching apparatus and its edge ring assembly and electrostatic chuck |
| CN108074787A (en) * | 2016-11-10 | 2018-05-25 | 北京北方华创微电子装备有限公司 | Lower electrode arrangement and semiconductor processing equipment |
| CN106367735B (en) * | 2016-11-14 | 2019-06-18 | 张宇顺 | Chemical vapor deposition unit and its deposition method |
| CN107130226B (en) * | 2017-06-19 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Plasma chamber and pre-cleaning equipment for physical vapor deposition |
| CN109216144B (en) * | 2017-07-03 | 2021-08-06 | 中微半导体设备(上海)股份有限公司 | Plasma reactor with low-frequency radio frequency power distribution adjusting function |
| CN107706079B (en) * | 2017-09-22 | 2019-05-14 | 深圳市中科摩方科技有限公司 | A kind of plasma injecting chamber inner lining structure |
| CN109961998B (en) * | 2017-12-22 | 2021-06-08 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and control method based on thickness monitoring of focusing ring |
| CN109994355B (en) * | 2017-12-29 | 2021-11-02 | 中微半导体设备(上海)股份有限公司 | Plasma reactor with low-frequency radio frequency power distribution adjusting function |
| CN111326391B (en) * | 2018-12-17 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
| CN111354672B (en) * | 2018-12-21 | 2023-05-09 | 夏泰鑫半导体(青岛)有限公司 | Electrostatic chuck and plasma processing apparatus |
| CN113124683B (en) * | 2020-01-15 | 2022-09-27 | 株洲弗拉德科技有限公司 | Vacuum vapor deposition furnace with feeder |
| CN113471051B (en) * | 2021-07-20 | 2023-08-08 | 电子科技大学长三角研究院(湖州) | Coreactor for Joule heat and plasma |
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| CN115613140B (en) * | 2022-12-16 | 2023-03-21 | 江苏邑文微电子科技有限公司 | Transverse plasma generating chamber and multifunctional high-temperature reaction device |
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| JPH0570957A (en) * | 1991-09-19 | 1993-03-23 | Nec Corp | Plasma vapor phase growth device |
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| US20070068623A1 (en) * | 2005-09-27 | 2007-03-29 | Yunsang Kim | Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor |
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| KR20080111627A (en) * | 2007-06-19 | 2008-12-24 | 삼성전자주식회사 | Plasma processing apparatus and method thereof |
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| CN103227091A (en) | 2013-07-31 |
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