TW201448006A - Wafer cutting method - Google Patents
Wafer cutting method Download PDFInfo
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- TW201448006A TW201448006A TW103111468A TW103111468A TW201448006A TW 201448006 A TW201448006 A TW 201448006A TW 103111468 A TW103111468 A TW 103111468A TW 103111468 A TW103111468 A TW 103111468A TW 201448006 A TW201448006 A TW 201448006A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
Description
本發明是有關於對表面有形成保護膜或TEG等積層體的半導體晶圓等被加工物進行切削之切削方法。 The present invention relates to a cutting method for cutting a workpiece such as a semiconductor wafer on which a protective film or a laminate such as TEG is formed.
已知以往有用於對半導體晶圓、玻璃基板、樹脂基板等裝置晶片進行分割之切削裝置(晶片切割(Dicing)裝置)，例如，如專利文獻1所揭示地，具有2個轉軸單元之雙轉軸切削裝置也是已知的。在這種雙轉軸切削裝置中，可實施分段式切割(step cut)，其為，首先進行以其中一個轉軸單元的切削刀片形成預定深度溝槽的半切(half cut)，之後，再進行以另一個轉軸單元的切削刀片將半切之溝槽完全切斷之全切(full cut)。 A cutting device (a wafer dicing device) for dividing a device wafer such as a semiconductor wafer, a glass substrate, or a resin substrate is known. For example, as disclosed in Patent Document 1, a double shaft having two rotating shaft units is known. Cutting devices are also known. In such a double-axis cutting device, a step cut may be performed by first performing a half cut of a predetermined depth groove by a cutting insert of one of the rotary shaft units, and then performing The cutting insert of the other spindle unit completely cuts the half-cut groove completely.
這種分段式切割，在切削加工半導體晶圓時，也會在沿設定了分割預定線的切割道去除稱為測試元件群(test-element-group，TEG)的測試用金屬圖樣的情況中進行。亦即所謂的，首先以其中一個轉軸單元的切削刀片去除TEG(半切)以形成第一切削溝，接著，以另一個轉軸單元的切削刀片在第一切削溝的位置形成第二切削溝以將半導 體晶圓完全切斷(全切)者。 In the case of cutting a semiconductor wafer, the segmented cutting also removes a test metal pattern called a test-element-group (TEG) along a scribe line in which a predetermined dividing line is set. get on. That is to say, the TIG is first removed by a cutting insert of one of the shaft units to form a first cutting groove, and then the cutting insert of the other shaft unit forms a second cutting groove at the position of the first cutting groove to Semi-guide The wafer is completely cut (full cut).
只要實施這種分段式切割，因為預先藉由半切去除TEG，並且用與半切所用之切削刀片不同的切削刀片進行全切，因此關於進行全切的切削刀片不會有因TEG而發生阻滯的情形。並且，從進行全切的切削刀片，不會因TEG而形成易阻滯傾向之狀況來看，可以有效地防止在晶圓的背面側發生崩裂(chipping)之情形。 As long as such a segmented cutting is carried out, since the TEG is removed by half cutting in advance and the cutting is performed by a cutting insert different from the cutting insert used for the half cutting, there is no blockage due to TEG regarding the full cutting. The situation. Further, from the case where the fully cut cutting insert does not have a tendency to block due to TEG, it is possible to effectively prevent chipping on the back side of the wafer.
專利文獻1：日本專利特開2003-173986號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2003-173986
專利文獻2：日本專利特開2000-49120號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2000-49120
專利文獻3：日本專利特開2008-300555號公報 Patent Document 3: Japanese Patent Laid-Open Publication No. 2008-300555
然而，切削刀片是一邊高速旋轉一邊切削晶圓等工件，因此會因為長時間持續進行半切，或持續切斷切割道上的TEG圖樣，而發生樹脂等切削屑附著於刀片前端，使刀片阻滯、鋒利程度降低。為解決此問題，有或在鄰接夾頭台的位置設置進行刀片磨利的打磨構件專用之副夾頭台、或在切割膠帶上與工件鄰接的位置貼附設置打磨構件的方法等(參照例如，專利文獻2、3)。無論採用何者，都有或要設置副夾頭台，或要準備特殊切割膠帶用框架的必要而會增加成本。 However, since the cutting insert cuts a workpiece such as a wafer while rotating at a high speed, the cutting of the TEG pattern on the scribe line is continued for a long time, and the chips such as resin adhere to the front end of the blade to block the blade. The sharpness is reduced. In order to solve this problem, there is a sub-clamp table dedicated to the sharpening member for sharpening the blade at a position adjacent to the chuck table, or a method of attaching the sanding member to a position adjacent to the workpiece on the dicing tape (see, for example, , Patent Documents 2 and 3). Regardless of which one is used, there is a need to set up a sub-clamp table, or to prepare a special frame for cutting tape, which increases the cost.
本發明是鑑於上述事情而作成者，以提供一種不需準備特殊設備，且可以不中斷切削動作地邊消除切削刀片的阻滯現象，邊切削半導體晶圓的晶圓的切削方法。 The present invention has been made in view of the above circumstances, and provides a cutting method for cutting a wafer of a semiconductor wafer without preparing a special device and eliminating the retardation of the cutting insert without interrupting the cutting operation.
為解決上述課題並達成目的，本發明之晶圓的切削方法，是相對於具有環狀刀刃且繞預定方向旋轉之切削刀片，使藉由積層於基板表面的積層體而形成有裝置之晶圓，沿與該切削刀片的旋轉軸直交的方向相對移動，以沿著劃分該裝置之複數條切割道切削晶圓，其特徵在於，該切削方法具有，膠帶黏貼步驟，是在前述晶圓的背面黏貼切割膠帶；積層體去除步驟，是實施該膠帶黏貼步驟後，將前述切削刀片比該積層體的厚度還深地切入到該基板的中途為止，並且，藉由在該切削刀片和前述晶圓相面對的位置上，使前述晶圓沿著前述切割道與該切削刀片的旋轉方向順向地相對移動以形成切削溝的作法，去除該積層體；以及磨利步驟，是在完成該積層體去除步驟後之任意時間點，使該切削刀片沿著該切削溝切入得比該切削溝還深，並使前述晶圓與該切削刀片之旋轉方向逆向地相對移動以沿著該切削溝切削該基板，而將在該積層體去除步驟中附著在該切削刀片前端的該積層體去除，並進行該切削刀片的磨利。 In order to solve the above problems and achieve the object, the wafer cutting method of the present invention is a wafer in which a device is formed by laminating a laminate layer on a surface of a substrate with respect to a cutting insert having a ring-shaped blade and rotating in a predetermined direction. Moving relatively in a direction orthogonal to the axis of rotation of the cutting insert to cut the wafer along a plurality of dicing streets dividing the device, wherein the cutting method has a tape bonding step on the back side of the wafer Pasting the dicing tape; the step of removing the layer is performed by inserting the cutting blade deeper than the thickness of the laminated body into the middle of the substrate after the tape bonding step, and by using the cutting blade and the wafer Facing the position, the wafer is moved relative to the cutting direction along the cutting direction of the cutting blade to form a cutting groove to remove the layered body; and the grinding step is completed in the layering At any point after the body removal step, the cutting insert is cut deeper along the cutting groove than the cutting groove, and the wafer and the cutting blade are The rotational direction of the relative movement reversely to cut along the cutting grooves of the substrate, and the step of removing the laminate adhered to the tip of the cutting insert in the laminate is removed, and sharpen the cutting insert.
本發明之晶圓的切削方法，藉由將去除表面之積層體的半切用切削刀片一邊切入已去除積層體之切削溝中 一邊歸位的作法，就能夠進行去除積層體的切削刀片之磨利，因此不需要設置特殊的機構具經濟效益。而且，因為不需要為了進行切削刀片之磨利而停止生產，也可謀求處理能力(throughput)的提升。 The cutting method of the wafer of the present invention is cut into the cutting groove of the removed laminated body by cutting the half-cutting cutting blade of the laminated body with the surface removed With the homing method, it is possible to remove the cutting inserts of the laminated body, so that it is not necessary to provide a special mechanism to be economical. Moreover, since it is not necessary to stop production for the purpose of sharpening the cutting insert, it is also possible to improve the throughput.
1‧‧‧切削裝置 1‧‧‧Cutting device
2‧‧‧裝置本體 2‧‧‧ device body
5‧‧‧夾頭台 5‧‧‧ chuck table
6‧‧‧框架保持機構 6‧‧‧Frame keeping mechanism
10‧‧‧切削機構 10‧‧‧ cutting mechanism
11‧‧‧第一切削機構 11‧‧‧First cutting mechanism
12‧‧‧第二切削機構 12‧‧‧Second cutting mechanism
15‧‧‧切削刀片 15‧‧‧Cutting inserts
16‧‧‧第一切削刀片 16‧‧‧First cutting insert
17‧‧‧第二切削刀片 17‧‧‧Second cutting insert
20‧‧‧轉軸 20‧‧‧ shaft
21‧‧‧第一轉軸 21‧‧‧First shaft
22‧‧‧第二轉軸 22‧‧‧second shaft
25‧‧‧轉軸殼體 25‧‧‧Shaft housing
26‧‧‧第一轉軸殼體 26‧‧‧First shaft housing
27‧‧‧第二轉軸殼體 27‧‧‧Second shaft housing
30‧‧‧噴嘴 30‧‧‧Nozzles
31‧‧‧第一噴嘴 31‧‧‧First nozzle
32‧‧‧第二噴嘴 32‧‧‧second nozzle
35‧‧‧刀片套 35‧‧‧blade cover
36‧‧‧第一刀片套 36‧‧‧First blade set
37‧‧‧第二刀片套 37‧‧‧second blade set
40‧‧‧Y軸移動機構 40‧‧‧Y-axis moving mechanism
41‧‧‧第一Y軸移動機構 41‧‧‧First Y-axis moving mechanism
42‧‧‧第二Y軸移動機構 42‧‧‧Second Y-axis moving mechanism
45‧‧‧Z軸移動機構 45‧‧‧Z-axis moving mechanism
46‧‧‧第一Z軸移動機構 46‧‧‧First Z-axis moving mechanism
47‧‧‧第二Z軸移動機構 47‧‧‧Second Z-axis moving mechanism
50‧‧‧洗淨‧乾燥機構 50‧‧‧Washing ‧Drying Mechanism
51‧‧‧旋轉台 51‧‧‧Rotating table
61‧‧‧表面 61‧‧‧ surface
62‧‧‧背面 62‧‧‧Back
65‧‧‧基板 65‧‧‧Substrate
66‧‧‧切削溝 66‧‧‧Cutting trench
67‧‧‧裝置 67‧‧‧ device
W‧‧‧半導體晶圓 W‧‧‧Semiconductor Wafer
T‧‧‧切割膠帶 T‧‧‧ cutting tape
L‧‧‧積層體 L‧‧‧ laminated body
S‧‧‧切割道 S‧‧‧ cutting road
F‧‧‧環狀框架 F‧‧‧Ring frame
X、Y、Z‧‧‧方向 X, Y, Z‧‧ Direction
ST11‧‧‧膠帶黏貼步驟 ST11‧‧‧ Tape Adhesive Step
ST12‧‧‧積層體去除步驟 ST12‧‧‧layer removal step
ST13‧‧‧磨利步驟 ST13‧‧‧ grinding steps
ST13‧‧‧分割步驟 ST13‧‧‧ segmentation steps
圖1為藉由實施形態之晶圓的切削方法進行切削加工之切削裝置的立體圖；圖2為圖1所示之切削機構的詳細圖；圖3為藉由圖1所示之切削裝置進行晶圓之切削加工時的說明圖；圖4為利用實施形態之晶圓的切削加工分割晶圓時之步驟的流程圖；圖5為積層體去除步驟中之切削說明圖；圖6為沿圖5之線A-A的截面圖；圖7為磨利步驟中之磨利說明圖；圖8為沿圖7之線B-B的截面圖；圖9為分割步驟中之切削說明圖；及圖10為沿圖9之線C-C的截面圖。 1 is a perspective view of a cutting apparatus for performing a cutting process by a wafer cutting method of the embodiment; FIG. 2 is a detailed view of the cutting mechanism shown in FIG. 1; and FIG. 3 is a crystal by the cutting apparatus shown in FIG. FIG. 4 is a flow chart showing the steps of dividing the wafer by the cutting process of the wafer of the embodiment; FIG. 5 is a cutting explanatory view in the step of removing the laminated body; FIG. FIG. 7 is a cross-sectional view of the grinding step; FIG. 8 is a cross-sectional view taken along line BB of FIG. 7; FIG. 9 is a cutting explanatory view in the dividing step; and FIG. A cross-sectional view of CC of line 9.
以下，根據圖式詳細地說明本發明之晶圓的切削方法的實施形態。另外，本發明不限定於此實施形態者。又，在下述實施形態的構成要素中，包含本領域業者可以且容易替換者，或者實質上相同者。 Hereinafter, embodiments of the wafer cutting method of the present invention will be described in detail based on the drawings. Further, the present invention is not limited to the embodiments. Further, the constituent elements of the following embodiments include those that can be easily replaced by those skilled in the art, or substantially the same.
[實施形態] [Embodiment]
圖1為藉由實施形態之晶圓的切削方法進行切削加工之切削裝置的立體圖。在本實施形態中，X軸方向為與後述切削刀片15之旋轉軸方向及垂直方向兩者都直交之方向，Y軸方向為與垂直方向直交的切削刀片15之旋轉軸方向，Z軸方向為垂直方向。圖1所示之切削裝置1是包含夾頭台5、兩個切削機構10和洗淨‧乾燥機構50而被構成。本實施形態之晶圓的切削方法中所使用的切削裝置1，是使兩個切削機構10沿Y軸方向相面對配置之對向軸雙刃型(Facing dual type)加工裝置。 Fig. 1 is a perspective view of a cutting apparatus for performing a cutting process by a wafer cutting method according to an embodiment. In the present embodiment, the X-axis direction is a direction orthogonal to both the rotation axis direction and the vertical direction of the cutting insert 15 to be described later, and the Y-axis direction is the rotation axis direction of the cutting insert 15 orthogonal to the vertical direction, and the Z-axis direction is Vertical direction. The cutting device 1 shown in Fig. 1 is constructed by including a chuck table 5, two cutting mechanisms 10, and a washing and drying mechanism 50. The cutting device 1 used in the method for cutting a wafer according to the present embodiment is a facing dual-edge processing device in which two cutting mechanisms 10 are arranged to face each other in the Y-axis direction.
切削裝置1是藉由使保持被加工物之夾頭台5和兩個切削機構10相對移動，而對被加工物施行切削加工。亦即，夾頭台5是設置成可在保持被加工物之狀態下，沿加工傳送方向之X軸方向，對裝置本體2相對移動。 The cutting device 1 performs cutting processing on the workpiece by relatively moving the chuck table 5 holding the workpiece and the two cutting mechanisms 10. That is, the chuck table 5 is provided to relatively move the apparatus body 2 in the X-axis direction in the processing conveyance direction while holding the workpiece.
在此，被加工物是被切削加工之加工對象，並無特別限定，可為例如，以矽(Silicon)、砷化鎵(GaAs)等作為基材之圓板狀半導體晶圓或光裝置晶圓、陶瓷(Ceramic)、玻璃、藍寶石(Sapphire，Al2O3)體系之圓板狀無機材料基板、金屬或樹脂等之圓板狀延展性材料等的各種加工材料。在本實施形態中，切削裝置1是以進行作為被加工物的半導體晶圓W之切削加工者來說明。 Here, the workpiece is a processing target to be subjected to a cutting process, and is not particularly limited, and may be, for example, a disk-shaped semiconductor wafer or an optical device crystal having a substrate of silicon or gallium arsenide (GaAs). Various processing materials such as a circular plate-shaped inorganic material substrate of a circle, a ceramic, a glass, a sapphire (Sapphire, Al 2 O 3 ) system, and a disk-shaped ductile material such as a metal or a resin. In the present embodiment, the cutting device 1 is described as a cutter for performing a semiconductor wafer W as a workpiece.
晶圓W，是以例如，藉由在形成有複數個裝置的裝置側之面的表面之相反側之面的背面，黏粘作為黏著膠帶之切割膠帶T，並將切割膠帶T進一步黏貼到磁性體之環 狀框架F上而形成固定於環狀框架F的狀態，進行切削加工。在切削裝置1上之晶圓W的切削加工是以，使晶圓W將黏貼有切割膠帶T側之面載置於夾頭台5，以被吸引保持於夾頭台5上，並使環狀框架F受到配置在夾頭台5周圍的框架保持機構6保持之狀態進行。 The wafer W is, for example, a dicing tape T which is an adhesive tape adhered to the back surface of the surface opposite to the surface on the surface on which the device side of the plurality of devices is formed, and further affixes the dicing tape T to the magnetic Body ring The frame F is formed in a state of being fixed to the annular frame F, and is cut. The wafer W on the cutting apparatus 1 is cut so that the wafer W is placed on the chuck table 5 with the surface on which the dicing tape T is adhered, and is sucked and held by the chuck table 5, and the ring is made. The frame F is carried out in a state in which the frame holding mechanism 6 disposed around the chuck table 5 is held.
圖2為圖1所示之切削機構的詳細圖。兩個切削機構10，是由第一切削機構11和第二切削機構12所構成，且這些切削機構10是包含切削刀片15、轉軸20、轉軸殼體25、噴嘴30及刀片套35而構成。也就是說，第一切削機構11是包含第一切削刀片16、第一轉軸21、第一轉軸殼體26、第一噴嘴31和第一刀片套36而構成。同樣地，第二切削機構12也是包含第二切削刀片17、第二轉軸22、第二轉軸殼體27、第二噴嘴32和第二刀片套37而構成。其中，第二切削刀片17是以比第一切削刀片16的厚度還薄一些的厚度所形成。 Figure 2 is a detailed view of the cutting mechanism shown in Figure 1. The two cutting mechanisms 10 are composed of a first cutting mechanism 11 and a second cutting mechanism 12, and these cutting mechanisms 10 are configured to include a cutting insert 15, a rotating shaft 20, a rotating shaft housing 25, a nozzle 30, and a blade sleeve 35. That is, the first cutting mechanism 11 is configured to include the first cutting insert 16, the first rotating shaft 21, the first rotating shaft housing 26, the first nozzle 31, and the first insert sleeve 36. Similarly, the second cutting mechanism 12 is also configured to include the second cutting insert 17, the second rotating shaft 22, the second rotating shaft housing 27, the second nozzle 32, and the second insert sleeve 37. Among them, the second cutting insert 17 is formed to have a thickness thinner than the thickness of the first cutting insert 16.
這些切削機構10，變成可藉由各自的移動機構移動，且藉由作為分度傳送機構之Y軸移動機構40和作為切入傳送機構之Z軸移動機構45，變成可沿Y軸方向和Z軸方向移動。也就是說，第一切削機構11，藉第一Y軸移動機構41和第一Z軸移動機構46，變成可沿Y軸方向及Z軸方向移動，第二切削機構12，藉第二Y軸移動機構42和第二Z軸移動機構47，變成可沿Y軸方向及Z軸方向移動。藉此，第一切削機構11和第二切削機構12可以一邊對保持於夾頭台5上之晶圓W供給切削水，一邊對應當加工區域施行切削加 工。 These cutting mechanisms 10 become movable by the respective moving mechanisms, and are made available in the Y-axis direction and the Z-axis by the Y-axis moving mechanism 40 as the indexing conveying mechanism and the Z-axis moving mechanism 45 as the cutting-in conveying mechanism. Move in direction. That is, the first cutting mechanism 11 is movable in the Y-axis direction and the Z-axis direction by the first Y-axis moving mechanism 41 and the first Z-axis moving mechanism 46, and the second cutting mechanism 12 is borrowed from the second Y-axis. The moving mechanism 42 and the second Z-axis moving mechanism 47 are movable in the Y-axis direction and the Z-axis direction. Thereby, the first cutting mechanism 11 and the second cutting mechanism 12 can perform cutting on the processing area while supplying cutting water to the wafer W held on the chuck table 5. work.
切削刀片15，具有環狀的刀刃，並設置成可繞預定方向旋轉。詳細來說，切削刀片15，是形成為可藉高速旋轉而切削保持於夾頭台5之晶圓W的極薄的環狀切削研磨石，藉此，使切削刀片15具有環狀刀刃。此切削刀片15是透過固定螺帽(圖示省略)，而可更換地被固定在轉軸20上。轉軸殼體25是形成為筒狀，並藉由空氣軸承將內插之轉軸20支撐成可自由旋轉。噴嘴30是用於使切削液噴出以供應到切削刀片15的加工點。刀片套35，將噴嘴30保持成可裝卸。第一切削機構11和第二切削機構12都是以這些構造所構成的。 The cutting insert 15 has an annular cutting edge and is arranged to be rotatable in a predetermined direction. Specifically, the cutting insert 15 is formed of an extremely thin annular cutting stone that can be cut and held by the wafer W of the chuck table 5 by high-speed rotation, whereby the cutting insert 15 has an annular cutting edge. The cutting insert 15 is fixed to the rotating shaft 20 so as to be replaceable by a fixing nut (not shown). The shaft housing 25 is formed in a cylindrical shape, and the inserted shaft 20 is supported to be freely rotatable by an air bearing. The nozzle 30 is a processing point for ejecting the cutting fluid to be supplied to the cutting insert 15. The blade sleeve 35 holds the nozzle 30 in a detachable manner. Both the first cutting mechanism 11 and the second cutting mechanism 12 are constructed in these configurations.
洗淨‧乾燥機構50使切削加工後之晶圓W可洗淨與乾燥。詳細來說，洗淨‧乾燥機構50是透過旋轉驅動源產生之動力使旋轉台51旋轉，同時藉由洗淨液噴射裝置對晶圓W噴射洗淨液以洗淨該晶圓W，並從氣體噴射裝置對洗淨後之晶圓W噴射氣體以使該晶圓W乾燥。 The cleaning and drying mechanism 50 allows the wafer W after the cutting process to be washed and dried. Specifically, the cleaning and drying mechanism 50 rotates the rotary table 51 by the power generated by the rotary drive source, and simultaneously ejects the cleaning liquid onto the wafer W by the cleaning liquid ejecting apparatus to wash the wafer W, and The gas ejecting apparatus ejects gas to the cleaned wafer W to dry the wafer W.
以本實施形態之晶圓W的切削方法進行切削加工之切削裝置1，是如以上所構成，以下，將就其作用進行說明。圖3為藉由圖1所示之切削裝置進行晶圓的切削加工時之說明圖。上述切削裝置1，是藉由第一切削刀片16和第二切削刀片17兩個切削刀片15，變成可階段性地進行晶圓W的切斷之，所謂的以分段式切割進行切斷之加工裝置。也就是說，切削裝置1是沿著區隔劃分複數個裝置67(參照圖5)之切割道S(參照圖5)，以作為第一切削刀片15之第一切 削刀片16在晶圓W的厚度方向上切削至中途為止，再沿著此切削溝66(參照圖5)以作為第二切削刀片15之第二切削刀片17切削晶圓W的剩餘厚度部分。 The cutting device 1 that performs the cutting process by the cutting method of the wafer W of the present embodiment is configured as described above, and the operation thereof will be described below. Fig. 3 is an explanatory view showing a process of cutting a wafer by the cutting device shown in Fig. 1; In the above-described cutting apparatus 1, the cutting inserts 15 are cut by the first cutting insert 16 and the second cutting insert 17, and the wafer W can be cut in stages. Processing device. That is, the cutting device 1 divides the scribe line S (refer to FIG. 5) of a plurality of devices 67 (refer to FIG. 5) along the partition as the first cut of the first cutting insert 15. The cutting blade 16 is cut to the middle in the thickness direction of the wafer W, and the remaining thickness portion of the wafer W is cut along the cutting groove 66 (see FIG. 5) by the second cutting insert 17 as the second cutting insert 15.
又，以切削裝置1進行晶圓W之切削加工時，在貼有切割膠帶T的晶圓W上，是從貼有切割膠帶T之面的相反側之面，即表面61側，進行切削加工。此外，像這樣進行切削加工的晶圓W，在構成晶圓W之基材的基板65的表面61側，積層有具有TEG(Test Element Group)等之電路圖案的表面膜等之積層體L，藉此，在晶圓W上形成複數個裝置67。 When the wafer W is cut by the cutting device 1, the wafer W to which the dicing tape T is attached is cut from the surface opposite to the surface on which the dicing tape T is attached, that is, the surface 61 side. . Further, the wafer W subjected to the cutting process has a layered body L such as a surface film having a circuit pattern such as TEG (Test Element Group) laminated on the surface 61 side of the substrate 65 constituting the substrate of the wafer W, Thereby, a plurality of devices 67 are formed on the wafer W.
在以切削裝置1進行晶圓W之切削加工時，貼有切割膠帶T側之面，即背面62，會成為底面而面向夾頭台5，積層有積層體L側之面，即表面61，會以成為上表面的方位，載置於夾頭台5上。此外，是在以框架保持機構6保持環狀框架F，且以夾頭台5吸引保持晶圓W之背面62側的狀態下，從晶圓W的表面61側，透過第一切削刀片16和第二切削刀片17階段性地進行切削。即，第一切削刀片16是設置當作半切用之切削刀片15，第二切削刀片17是設置當作分割用之切削刀片15，而切削裝置1則是利用這兩個切削刀片15階段性地切削晶圓W。 When the wafer W is cut by the cutting device 1, the surface on the side of the dicing tape T, that is, the back surface 62, is placed on the bottom surface, and faces the chuck table 5, and the surface on the side of the layered body L, that is, the surface 61 is laminated. It will be placed on the chuck table 5 in the orientation of the upper surface. In addition, in a state in which the frame holding mechanism 6 holds the annular frame F and sucks and holds the back surface 62 side of the wafer W by the chuck table 5, the first cutting blade 16 is transmitted from the surface 61 side of the wafer W. The second cutting insert 17 performs cutting in stages. That is, the first cutting insert 16 is provided as a cutting insert 15 for half cutting, the second cutting insert 17 is provided as a cutting insert 15 for division, and the cutting apparatus 1 uses the two cutting inserts 15 in stages. Cutting wafer W.
圖4為利用實施形態之晶圓的切削加工分割晶圓時之步驟的流程圖。分割晶圓W時，對於積層有積層體L的晶圓W，首先是在膠帶黏貼步驟(步驟ST11)黏貼切割膠帶T。將切割膠帶T黏貼至具有比晶圓W外徑大之內徑的孔的 環狀框架F上。在此狀態下，是將晶圓W的背面62由環狀框架F的孔的部位黏貼到切割膠帶T上。藉此，使晶圓W的背面62整面黏貼切割膠帶T。 Fig. 4 is a flow chart showing the procedure for dividing a wafer by the cutting process of the wafer of the embodiment. When the wafer W is divided, the wafer W on which the layered body L is laminated is first adhered to the dicing tape T in the tape bonding step (step ST11). Adhesive tape T is adhered to a hole having an inner diameter larger than the outer diameter of the wafer W On the annular frame F. In this state, the back surface 62 of the wafer W is adhered to the dicing tape T from the portion of the hole of the annular frame F. Thereby, the back surface 62 of the wafer W is adhered to the dicing tape T over the entire surface.
實施膠帶黏貼步驟後，接著，在積層體去除步驟(步驟ST12)中去除積層於晶圓W的表面61之積層體L。去除積層體L時，首先，以讓表面61變成上表面的方位，用切削裝置1之夾頭台5保持晶圓W(參照圖3)。在此狀態下，透過從晶圓W之表面61側，即積層有積層體L之側，以切削刀片15進行晶圓W之切削，而去除積層體L。 After the tape bonding step is performed, the layered body L laminated on the surface 61 of the wafer W is removed in the layer removing step (step ST12). When the laminated body L is removed, first, the wafer W is held by the chuck table 5 of the cutting device 1 in the orientation in which the surface 61 is brought to the upper surface (see FIG. 3). In this state, the deposition of the wafer W is performed by the cutting insert 15 from the side of the surface 61 of the wafer W, that is, the side on which the laminated body L is laminated, and the laminated body L is removed.
圖5為積層體去除步驟中之切削說明圖。圖6為沿圖5之線A-A之截面圖。積層體去除步驟是藉由讓兩個切削刀片15中之第一切削刀片16與晶圓W之表面61相對，並一邊使旋轉之第一切削刀片16的外周面接觸晶圓W之切割道S，一邊使第一切削刀片16和晶圓W沿切割道S相對移動而進行。在此積層體去除步驟中，是使第一切削刀片16，以比積層體L的厚度還深且比晶圓W的厚度還淺的深度，將其外周面之下端附近從積層體L側之面切入晶圓W中，而從表面61側切入到基板65的中途為止。藉此，第一切削刀片16，以從積層體L側之面進入晶圓W的深度，切削晶圓W。 Fig. 5 is a cutting explanatory view in the step of removing the laminated body. Figure 6 is a cross-sectional view taken along line A-A of Figure 5. The layer removing step is performed by having the first cutting insert 16 of the two cutting inserts 15 face the surface 61 of the wafer W and contacting the outer peripheral surface of the rotating first cutting insert 16 with the cutting path S of the wafer W. The first cutting insert 16 and the wafer W are relatively moved along the cutting path S. In the step of removing the laminated body 16, the first cutting insert 16 is deeper than the thickness of the laminated body L and shallower than the thickness of the wafer W, and the vicinity of the lower end of the outer peripheral surface is from the side of the laminated body L. The surface is cut into the wafer W, and is cut from the surface 61 side to the middle of the substrate 65. Thereby, the first cutting insert 16 cuts the wafer W by entering the depth of the wafer W from the surface on the side of the laminated body L.
積層體去除步驟中，在以第一切削刀片16切割晶圓W的同時，還使保持晶圓W的夾頭台5沿與第一切削刀片16的旋轉軸直交的方向相對地移動。此時的移動方向，是使夾頭台5朝與旋轉之第一切削刀片16的下端附近的旋轉方向相同的方向移動，並相對於第一切削刀片16，使晶圓 W沿這個方向相對移動。亦即，使夾頭台5，以沿著晶圓W之切割道S的方向，並且，朝與第一切削刀片16上接觸到晶圓W的部位附近的旋轉方向相同的方向，即順向，進行移動。在這個狀態下，在晶圓W的移動方向上第一切削刀片16開始進行晶圓W之切削的部位，是從上方側到下方側，亦即，第一切削刀片16是以從表面61方向側往背面62方向側進行切削之，所謂的下切法(down cut)進行切削。 In the laminate removal step, while the wafer W is cut by the first cutting insert 16, the chuck table 5 holding the wafer W is relatively moved in a direction orthogonal to the rotation axis of the first cutting insert 16. The moving direction at this time is to move the chuck table 5 in the same direction as the rotation direction near the lower end of the rotating first cutting insert 16, and to make the wafer with respect to the first cutting insert 16. W moves relatively in this direction. That is, the chuck stage 5 is oriented in the same direction as the direction of rotation of the first cutting insert 16 in the vicinity of the portion of the first cutting insert 16 that is in the direction of the scribe line S of the wafer W, that is, in the forward direction. , move. In this state, the portion where the first cutting insert 16 starts the cutting of the wafer W in the moving direction of the wafer W is from the upper side to the lower side, that is, the first cutting insert 16 is in the direction from the surface 61. The side is cut to the side of the back surface 62, and the so-called down cut is performed.
藉此，第一切削刀片16從積層有積層體L側之面，以比積層體L的厚度還深且比晶圓W的厚度還淺的深度切削晶圓W，並沿著切割道S形成該深度的切削溝66。換言之，切削溝66是藉由以第一切削刀片16的厚度將積層體L去除，並以第一切削刀片16的厚度切削基板65中靠近積層體L的部位而形成。如此，在積層體去除步驟中，是在第一切削刀片16和晶圓W相對的位置上，藉由和第一切削刀片16的旋轉方向順向地使晶圓W沿著切割道S相對移動，形成切削溝66，而去除積層體L。 Thereby, the first cutting insert 16 cuts the wafer W from the surface on which the laminated body L is laminated, deeper than the thickness of the laminated body L and shallower than the thickness of the wafer W, and forms along the scribe line S. The depth of the cutting groove 66. In other words, the cutting groove 66 is formed by removing the laminated body L by the thickness of the first cutting insert 16 and cutting the portion of the substrate 65 close to the laminated body L with the thickness of the first cutting insert 16. Thus, in the layer removing step, the wafer W is relatively moved along the scribe line S in a direction opposite to the direction of rotation of the first cutting insert 16 at a position where the first cutting insert 16 and the wafer W are opposed to each other. The cutting groove 66 is formed, and the laminated body L is removed.
完成積層體去除步驟後，接著，在磨利步驟(步驟ST13)中，進行第一切削刀片16的磨利作業。圖7為磨利步驟中之磨利說明圖。圖8為沿圖7之線B-B的截面圖。磨利步驟是藉由使在積層體去除步驟中進行晶圓W之切削的第一切削刀片16在繞與積層體去除步驟之旋轉方向相同的方向旋轉的狀態下，一邊使其外周面接觸切削溝66，一邊使其沿和積層體去除步驟中的晶圓W之相對移動方向相反的方向相對移動而進行。在此磨利步驟中，是使第一切削刀 片16，以在晶圓W上形成切削溝66的部位的剩餘厚度，亦即，比從切削溝66的溝底至背面62為止的厚度還淺的深度，將其外周面的下端附近從切削溝66的溝底切入晶圓W。藉此，第一切削刀片16是以從切削溝66的溝底進入晶圓W的深度，切削晶圓W。 After the step of removing the layered body is completed, next, in the grinding step (step ST13), the sharpening operation of the first cutting insert 16 is performed. Figure 7 is a sharp illustration of the grinding step. Figure 8 is a cross-sectional view taken along line B-B of Figure 7. In the grinding step, the first cutting insert 16 that performs the cutting of the wafer W in the laminated body removing step is rotated in the same direction as the rotating direction of the laminated body removing step, and the outer peripheral surface is brought into contact with the cutting. The groove 66 is moved while relatively moving in a direction opposite to the relative movement direction of the wafer W in the layer removing step. In this grinding step, the first cutter is made The sheet 16 has a remaining thickness of a portion where the cutting groove 66 is formed on the wafer W, that is, a depth which is shallower than the thickness from the groove bottom of the cutting groove 66 to the back surface 62, and the vicinity of the lower end of the outer peripheral surface is cut. The groove bottom of the groove 66 is cut into the wafer W. Thereby, the first cutting insert 16 cuts the wafer W at a depth from the bottom of the groove of the cutting groove 66 into the wafer W.
雖然在磨利步驟，也是這樣地以第一切削刀片16切削晶圓W，但在磨利步驟中，與積層體去除步驟不同的是，使夾頭台5朝旋轉的第一切削刀片16下端附近之旋轉方向的相反方向移動。也就是說，磨利步驟中，第一切削刀片16的旋轉方向是照原樣地維持在積層體去除步驟中的旋轉方向，並使夾頭台5朝與積層體去除步驟中的移動方向相反的方向移動。詳細來說，在積層體去除步驟中，雖然是在使第一切削刀片16沿著切割道S的狀態下，使晶圓W順向地移動，但當第一切削刀片16到達切割道S的端部時，則是以使晶圓W往相反方向移動的方式移動夾頭台5。 Although the wafer W is cut by the first cutting insert 16 in the grinding step, in the sharpening step, unlike the laminated body removing step, the lower end of the first cutting insert 16 that causes the chuck table 5 to rotate Move in the opposite direction of the direction of rotation nearby. That is, in the grinding step, the rotation direction of the first cutting insert 16 is maintained in the direction of rotation in the laminated body removing step as it is, and the chuck table 5 is opposite to the moving direction in the laminated body removing step. Move in direction. In detail, in the laminated body removing step, although the wafer W is moved in the state in which the first cutting insert 16 is along the dicing street S, when the first cutting insert 16 reaches the scribe line S, At the end, the chuck 5 is moved such that the wafer W moves in the opposite direction.
換言之，在磨利步驟中，是在不改變第一切削刀片16的旋轉方向下，使夾頭台5，以沿著晶圓W之切割道S的方向，並且朝和第一切削刀片16上接觸到晶圓W的部位附近的旋轉方向相反的方向，即逆向，移動。在這個狀態下，在晶圓W移動方向上第一切削刀片16開始進行晶圓W之切削的部位，是從下方側往上方側，亦即，第一切削刀片16是以從背面62方向側往表面61方向側進行切削之，所謂的上切法(up cut)進行切削。 In other words, in the sharpening step, the chuck table 5 is caused to follow the direction of the scribe line S of the wafer W and toward the first cutting insert 16 without changing the direction of rotation of the first cutting insert 16. The direction of rotation in the vicinity of the portion in contact with the wafer W is reversed, that is, reversed. In this state, the portion where the first cutting insert 16 starts the cutting of the wafer W in the moving direction of the wafer W is from the lower side to the upper side, that is, the first cutting insert 16 is from the side of the back surface 62. The cutting is performed on the side of the surface 61, and the so-called up cut is performed.
藉此，第一切削刀片16會更深地切入切削溝66， 且在夾頭台5朝與第一切削刀片16的旋轉方向逆向地使晶圓W相對移動的方向進行移動的狀態下，以第一切削刀片16沿著切削溝66切削基板65。在磨利步驟中，像這樣藉由一邊與第一切削刀片16的旋轉方向逆向地使晶圓W相對移動一邊進行切削，就能在抵抗晶圓W的移動方向的方向上讓第一切削刀片16進行晶圓W的切削。藉此，就能去除在積層體去除步驟中，附著於第一切削刀片16的前端，即第一切削片16的外周面上，的積層體L，而可藉由將包含在積層體L中的金屬等從第一切削刀片16的外周面去除，進行第一切削刀片16之磨利。 Thereby, the first cutting insert 16 will cut deeper into the cutting groove 66, In a state where the chuck table 5 moves in a direction in which the wafer W is relatively moved in a direction opposite to the rotation direction of the first cutting insert 16, the first cutting insert 16 cuts the substrate 65 along the cutting groove 66. In the grinding step, the first cutting insert can be made in the direction against the moving direction of the wafer W by cutting the wafer W while moving in the opposite direction to the rotation direction of the first cutting insert 16. 16 performs cutting of the wafer W. Thereby, the laminated body L adhering to the front end of the first cutting insert 16, that is, the outer peripheral surface of the first cutting piece 16, in the laminated body removing step can be removed, and can be contained in the laminated body L by being laminated in the laminated body L The metal or the like is removed from the outer peripheral surface of the first cutting insert 16, and the first cutting insert 16 is sharpened.
完成磨利步驟後，接著，在分割步驟(步驟ST14)中，進行晶圓W的分割。圖9為分割步驟中的切削說明圖。圖10是沿圖9之線C-C的截面圖。分割步驟是藉由使兩個切削刀片15中的第二切削刀片17面向晶圓W的表面61，並一邊使旋轉的第二切削刀片17的外周面接觸第一切削刀片16所形成的切削溝66，一邊沿切削溝66使第二切削刀片17和晶圓W相對移動而進行。在此分割步驟中，是使第二切削刀片17，以比晶圓W單體的厚度還深且不切斷黏貼在晶圓W背面62的切割膠帶T的深度，將其外周面的下端附近從切削溝66的溝底切入晶圓W。藉此，第二切削刀片17，是以切斷晶圓W的基板65，且不切斷切割膠帶T的深度，切削晶圓W。 After the grinding step is completed, next, in the dividing step (step ST14), the division of the wafer W is performed. Fig. 9 is a view for cutting in the dividing step. Figure 10 is a cross-sectional view taken along line C-C of Figure 9. The dividing step is performed by making the second cutting insert 17 of the two cutting inserts 15 face the surface 61 of the wafer W and contacting the outer peripheral surface of the rotating second cutting insert 17 with the cutting groove formed by the first cutting insert 16. 66, while the second cutting insert 17 and the wafer W are relatively moved along the cutting groove 66. In this dividing step, the second cutting insert 17 is made deeper than the thickness of the wafer W and does not cut the depth of the dicing tape T adhered to the back surface 62 of the wafer W, and the lower end of the outer peripheral surface is provided. The wafer W is cut from the groove bottom of the cutting groove 66. Thereby, the second cutting insert 17 cuts the wafer W by cutting the substrate 65 of the wafer W without cutting the depth of the dicing tape T.
還有，因為第二切削刀片17的厚度比第一切削刀片16薄，故第二切削刀片17，是在不擴大以第一切削刀片 16切削過之切削溝66的溝寬的情況下，從該切削溝66的溝底對基板65作進一步的切削。 Also, since the thickness of the second cutting insert 17 is thinner than that of the first cutting insert 16, the second cutting insert 17 is not enlarged to the first cutting insert. When the groove width of the cutting groove 66 is cut, the substrate 65 is further cut from the groove bottom of the cutting groove 66.
在分割步驟中，與在積層體去除步驟以第一切削刀片16切削晶圓W的情況相同地，是使夾頭台5朝和旋轉之第二切削刀片17的下端附近的旋轉方向相同的方向移動，並相對於第二切削刀片17使晶圓W相對移動。亦即，是使夾頭台5朝與第二切削刀片17上接觸到晶圓W的部位附近的旋轉方向相同的方向，即順向，移動。 In the dividing step, similarly to the case where the wafer W is cut by the first cutting insert 16 in the laminated body removing step, the chuck table 5 is oriented in the same direction as the rotation direction of the lower end of the second cutting insert 17 that is rotated. Moving, and relatively moving the wafer W relative to the second cutting insert 17. That is, the chuck table 5 is moved in the same direction as the direction of rotation in the vicinity of the portion of the second cutting blade 17 that is in contact with the wafer W, that is, in the forward direction.
如此，在分割步驟中，就能以第二切削刀片17更深地切入切削溝66，並以比晶圓W單體厚度還深且比將黏貼在晶圓W的背面62的切割膠帶T也包含在內的厚度還淺的深度，沿著切削溝66切削晶圓W。藉此，使第二切削刀片17沿著由第一切削刀片16所形成之切削溝66，切入至切割膠帶T的中途為止。此外，如此就能一邊切削晶圓W，一邊在第二切削刀片17和晶圓W相面對的位置上，相對於第二切削刀片17的旋轉方向順向地使晶圓W沿著切割道S相對移動。藉此，可不切斷切割膠帶T地沿著第一切削刀片16所形成之切削溝66分割基板65，將位於切削溝66兩側之裝置67彼此分割。 In this manner, in the dividing step, the cutting groove 66 can be cut deeper by the second cutting insert 17, and the cutting tape T which is deeper than the thickness of the wafer W and which is adhered to the back surface 62 of the wafer W can also be included. The wafer W is cut along the cutting groove 66 at a shallow depth inside. Thereby, the second cutting insert 17 is cut along the cutting groove 66 formed by the first cutting insert 16 to the middle of the dicing tape T. Further, in this way, while the wafer W is being cut, the wafer W is smoothly traversed along the scribe line with respect to the rotation direction of the second cutting insert 17 at a position where the second cutting insert 17 and the wafer W face each other. S moves relatively. Thereby, the substrate 65 can be divided along the cutting groove 66 formed by the first cutting insert 16 without cutting the dicing tape T, and the devices 67 located on both sides of the cutting groove 66 can be divided from each other.
再者，在如此等利用第二切削刀片17的分割步驟中，於沿預定的切割道S分割基板65時，宜使用第一切削刀片16在其他的切割道S上進行積層體去除步驟。 Further, in the dividing step of using the second cutting insert 17 in this manner, when the substrate 65 is divided along the predetermined scribe line S, it is preferable to perform the layer removing step on the other scribe lines S using the first cutting insert 16.
以上的實施形態之晶圓W的切削方法，是在以第一切削刀片16形成切削溝66以去除積層體L之後，藉由使第 一切削刀片16相對於切削溝66更加深地切入，並和第一切削刀片16之旋轉方向逆向地使晶圓W相對移動，而進行第一切削刀片16之磨利。其結果為，由於不需設置特殊的機構，而可以抑制用於切削晶圓W之裝置設置時的成本，因此可提升經濟效益。此外，因為可在不中斷切削動作的情況下，邊消除第一切削刀片16的阻滯現象邊切削晶圓W，故不需為了進行第一切削刀片16的磨利而停止生產，而可謀求處理能力的提升。 In the cutting method of the wafer W of the above embodiment, after the cutting groove 66 is formed by the first cutting insert 16 to remove the laminated body L, A cutting insert 16 cuts deeper with respect to the cutting groove 66 and relatively moves the wafer W opposite to the direction of rotation of the first cutting insert 16, thereby performing sharpening of the first cutting insert 16. As a result, since it is not necessary to provide a special mechanism, the cost at the time of setting the device for cutting the wafer W can be suppressed, and thus the economic efficiency can be improved. Further, since the wafer W can be cut while eliminating the retardation phenomenon of the first cutting insert 16 without interrupting the cutting operation, it is not necessary to stop the production of the first cutting insert 16 for the purpose of smoothing the production. Increased processing power.
又，透過像這樣邊消除第一切削刀片16的阻滯現象，邊切削晶圓W的作法，可提升切削性能，因此也可以提升藉由切削晶圓W而製成的各裝置67的品質。 Further, by eliminating the retardation phenomenon of the first cutting insert 16 and thus cutting the wafer W, the cutting performance can be improved. Therefore, the quality of each device 67 produced by cutting the wafer W can be improved.
[變形例] [Modification]
再者，上述晶圓W的切削方法，雖然使用了做為切削刀片15的第一切削刀片16和第二切削刀片17，並藉由用這2個切削刀片15階段性地進行切削加工之，所謂的分段式切割而採用切削晶圓W的切削裝置1，但也可以使用這個以外的切削裝置1。例如，也可以使用具有1個切削用的旋轉軸20，並以固定在該轉軸20上的1個切削刀片15進行分割的切削裝置1來進行積層體去除步驟和分割步驟。此時，藉由以一個切削刀片15形成切削溝66以進行積層體L之去除後，進行磨利步驟，並在磨利步驟中將切削刀片15的前端打磨後，藉由再度以切削刀片15進行切削溝66的全切，以切削晶圓W。藉此，不需要準備特殊的設備，又，可以不用中斷切削動作地，邊消除切削刀片15的阻滯現象，邊切削晶圓W。 Further, in the cutting method of the wafer W, the first cutting insert 16 and the second cutting insert 17 which are the cutting inserts 15 are used, and the cutting is performed stepwise by using the two cutting inserts 15, The cutting device 1 for cutting the wafer W is used for the segmental cutting, but the cutting device 1 other than this may be used. For example, a laminated body removing step and a dividing step may be performed using the cutting device 1 having one rotating shaft 20 for cutting and dividing by one cutting insert 15 fixed to the rotating shaft 20. At this time, after the cutting groove 66 is formed by one cutting insert 15 to remove the laminated body L, the grinding step is performed, and after the front end of the cutting insert 15 is ground in the sharpening step, by cutting the cutting blade 15 again The cutting groove 66 is completely cut to cut the wafer W. Thereby, it is not necessary to prepare special equipment, and the wafer W can be cut while eliminating the retardation of the cutting insert 15 without interrupting the cutting operation.
又，在上述之晶圓W的切削方法中，雖未就進行切削刀片15之磨利步驟的時間點作規定，但是亦可適當地設定進行切削刀片15之磨利步驟的時間點。例如，在積層體去除步驟中，邊使晶圓W移動，邊沿著預定之切割道S以切削刀片15進行切削加工直到進行到切割道S的端部為止，之後，為了將切削刀片15定位至下一個切割道S而使晶圓W朝相反方向移動時，也可在該切割道S上進行切割刀片15的磨利步驟。或者，在1個形成有複數條切割道S的晶圓W上，僅以1條切割道S進行磨利步驟亦可。較理想的是，使磨利步驟，依照晶圓W的大小和積層體L的材質、切割道S的數量等，在完成積層體去除步驟之後的任意時間點適當設定而實行者。 Further, in the above-described cutting method of the wafer W, although the timing at which the grinding step of the cutting insert 15 is performed is not specified, the timing at which the grinding step of the cutting insert 15 is performed may be appropriately set. For example, in the layer removing step, while the wafer W is moved, the cutting blade 15 is cut along the predetermined cutting path S until the end of the cutting path S is performed, and thereafter, in order to position the cutting insert 15 to When the next scribe line S is moved to move the wafer W in the opposite direction, the sharpening step of the dicing blade 15 may be performed on the scribe line S. Alternatively, on one wafer W on which a plurality of dicing streets S are formed, the grinding step may be performed by only one scribe line S. Preferably, the grinding step is performed by setting the setting of the wafer W in accordance with the size of the wafer W, the material of the laminated body L, the number of the scribe lines S, and the like at any point after the completion of the layer removing step.
又，上述之晶圓W的切削方法，在積層體去除步驟和分割步驟中，是使晶圓W相對於切削刀片15的旋轉方向順向地移動，而在磨利步驟中，是使晶圓W相對於切削刀片15的旋轉方向逆向地移動，但晶圓W的移動方向也可以是此等以外的方向。也就是說，雖然積層體去除步驟和分割步驟是以下切法進行切削，磨利步驟則是以上切法進行切削，但切削時的切削方向，也可以是此等以外的方向。例如，在磨利步驟中使晶圓W順向地移動，而以下切法進行磨利步驟亦可。晶圓W的移動方向，以依照切削裝置1的動作順序、所要求的切削最終狀態，適當設定者為宜。 Further, in the above-described method of cutting the wafer W, in the layer removing step and the dividing step, the wafer W is moved in the direction of rotation of the cutting insert 15, and in the grinding step, the wafer is moved. W moves in the reverse direction with respect to the rotation direction of the cutting insert 15, but the moving direction of the wafer W may be a direction other than these. In other words, although the laminated body removing step and the dividing step are performed by the following cutting method, the grinding step is performed by the above cutting method, but the cutting direction during cutting may be other than the cutting direction. For example, the wafer W is moved in the smoothing step in the smoothing step, and the grinding step may be performed by the following cutting method. The moving direction of the wafer W is preferably set as appropriate in accordance with the order of operation of the cutting apparatus 1 and the required final cutting state.
15‧‧‧切削刀片 15‧‧‧Cutting inserts
16‧‧‧第一切削刀片 16‧‧‧First cutting insert
62‧‧‧背面 62‧‧‧Back
65‧‧‧基板 65‧‧‧Substrate
66‧‧‧切削溝 66‧‧‧Cutting trench
W‧‧‧半導體晶圓 W‧‧‧Semiconductor Wafer
T‧‧‧切割膠帶 T‧‧‧ cutting tape
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