TW201444942A - Pressure-sensitive adhesive tape for processing semiconductor wafers - Google Patents
Pressure-sensitive adhesive tape for processing semiconductor wafers Download PDFInfo
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- TW201444942A TW201444942A TW103107393A TW103107393A TW201444942A TW 201444942 A TW201444942 A TW 201444942A TW 103107393 A TW103107393 A TW 103107393A TW 103107393 A TW103107393 A TW 103107393A TW 201444942 A TW201444942 A TW 201444942A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/245—Vinyl resins, e.g. polyvinyl chloride [PVC]
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2427/00—Presence of halogenated polymer
- C09J2427/006—Presence of halogenated polymer in the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
本發明係關於一種將半導體晶圓切割分離成小片之切片(dicing)步驟所使用之半導體晶圓加工用黏著帶。 The present invention relates to an adhesive tape for semiconductor wafer processing used in a dicing step of dicing and separating a semiconductor wafer into small pieces.
近年來，由於行動機器之發展，而對半導體裝置期望進一步之薄型化。因此，有必要使半導體晶片變薄至厚度為50~100μm或其以下。一般而言，於背面研磨時會對半導體晶圓之電路面貼附表面保護片材，保護電路面並固定晶圓而進行背面研磨。其後，經過切片、拾取、黏晶、樹脂密封等各種步驟，製造半導體裝置。 In recent years, due to the development of mobile devices, semiconductor devices are expected to be further thinned. Therefore, it is necessary to thin the semiconductor wafer to a thickness of 50 to 100 μm or less. Generally, in the back surface polishing, a surface protection sheet is attached to the circuit surface of the semiconductor wafer, and the surface of the circuit is protected and the wafer is fixed to perform back grinding. Thereafter, a semiconductor device is manufactured by various steps such as slicing, picking, die bonding, and resin sealing.
於對半導體晶圓進行切片而將其晶片化時，半導體晶圓之背面(研磨面)貼附切片膠帶，一面將晶圓保持於切片膠帶上一面進行晶圓之單片化(切片)。作為切片膠帶，市售有各種切片膠帶，尤佳地使用被稱為UV膠帶之紫外線硬化型黏著帶。UV膠帶具有藉由紫外線照射而黏著劑層發生硬化從而接著力消失或銳減的性質。因此，於晶圓之切片時，可以充分之接著力固定晶圓，於切片結束後，可藉由使黏著劑層發生紫外線硬化而容易地拾取晶片。 When the semiconductor wafer is sliced and waferized, the back surface (polishing surface) of the semiconductor wafer is attached with a dicing tape, and the wafer is diced (sliced) while holding the wafer on the dicing tape. As the dicing tape, various kinds of dicing tapes are commercially available, and an ultraviolet curing type adhesive tape called a UV tape is particularly preferably used. The UV tape has a property that the adhesive layer is hardened by ultraviolet irradiation to thereby cause the force to disappear or sharply decrease. Therefore, when the wafer is sliced, the wafer can be sufficiently fixed by the force, and after the completion of the dicing, the wafer can be easily picked up by ultraviolet curing of the adhesive layer.
於半導體晶圓之切片時，有時產生被稱為崩裂(chipping)之晶片之缺損、開裂，其大小會達到100μm。於薄膜化不斷進展之半導體裝置中，即便為數十微米之崩裂，亦有時會導致電路面產生崩裂，此關係到良率之降低。 When slicing a semiconductor wafer, defects and cracks of a chip called chipping sometimes occur, and the size thereof is 100 μm. In a semiconductor device in which thin film formation is progressing, even if it is cracked at several tens of micrometers, cracking of the circuit surface may occur, which is related to a decrease in yield.
該崩裂起因於：切片時晶片因旋轉刀而振動，而晶片與旋轉 刀、或晶片彼此發生接觸。為了解決崩裂之問題，專利文獻1中揭示有一種用以更牢固地保持晶片之黏著劑構成物。另一方面，未提及基材片，而未達成足夠之崩裂抑制。 The cracking is caused by the fact that the wafer vibrates due to the rotating knife while slicing, and the wafer and the rotation The knives, or wafers, come into contact with each other. In order to solve the problem of cracking, Patent Document 1 discloses an adhesive composition for holding a wafer more firmly. On the other hand, the substrate sheet was not mentioned, and sufficient crack suppression was not achieved.
專利文獻2中揭示有對崩裂抑制有效果之基材片之拉伸強度。然而，切片時，由旋轉刀帶來之壓入之應力較大地施加於基材片，針對壓入之反彈力之指標之研究並不足夠。又，關於拉伸強度之上限，係著眼於延伸性進行設定，而未提及拾取步驟，尚未能滿足作為適於拾取步驟之基材片。 Patent Document 2 discloses a tensile strength of a substrate sheet which is effective for suppressing cracking. However, at the time of slicing, the stress of the press-in which is caused by the rotary blade is largely applied to the base material sheet, and the research on the index of the rebound force of the press-in is not sufficient. Further, regarding the upper limit of the tensile strength, the setting is focused on the elongation, and the pickup step is not mentioned, and the substrate sheet which is suitable for the pickup step has not been satisfied.
[專利文獻1]日本特開2011-233718號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-233718
[專利文獻2]日本特開2001-207140號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2001-207140
本發明之目的在於提供一種半導體晶圓加工用黏著帶，其貫通薄膜化不斷進展之半導體晶圓之切片步驟與拾取步驟而滿足要求性能，減少崩裂，且使拾取變得容易、確實。 An object of the present invention is to provide an adhesive tape for processing a semiconductor wafer which satisfies a required performance by a slicing step and a picking step of a semiconductor wafer which is progressing in thin film formation, reduces cracking, and makes picking up and reliable.
本發明者等人為了達成上述目的而反覆進行努力研究，結果發現：將對構成黏著帶之基材片賦予壓入應力時之緩和應力之時間變化利用其與時間之關係進行控制，藉此可減少崩裂，且使拾取變得容易。本發明係基於該見解而成者。 In order to achieve the above object, the inventors of the present invention have conducted intensive studies and found that the temporal change in the relaxation stress when the press-in stress is applied to the base material sheet constituting the adhesive tape is controlled by the relationship with time. Reduce cracking and make picking easier. The present invention is based on this insight.
即，上述課題係藉由以下手段而達成。 That is, the above problems are achieved by the following means.
(1)一種半導體晶圓加工用黏著帶，其係於基材片上積層有黏著劑層者，其特徵在於：該基材片於對厚度方向以1mm/min壓入前端形狀R=5.0±0.1mm(即R=4.9~5.1mm)之壓頭而保持來自該基材片之反彈 力成為50N之位移時，自該狀態起之應力緩和之時間變化中，0~5秒之反彈力之時間變化(A)為0.23~0.28N/s，且與超過5秒至10秒為止之反彈力之時間變化(B)的比(B)/(A)為0.40~0.45。 (1) An adhesive tape for processing a semiconductor wafer, which is characterized in that an adhesive layer is laminated on a substrate sheet, wherein the substrate sheet is pressed into the front end shape at a thickness of 1 mm/min in the thickness direction: R = 5.0 ± 0.1 The indenter of mm (ie R=4.9~5.1mm) keeps the rebound from the substrate sheet When the force becomes a displacement of 50N, the time change (A) of the rebound force of 0 to 5 seconds is 0.23 to 0.28 N/s, and is more than 5 seconds to 10 seconds in the time change of the stress relaxation from this state. The ratio (B)/(A) of the time change of the rebound force (B) is 0.40 to 0.45.
(2)如(1)之半導體晶圓加工用黏著帶，其特徵在於：上述黏著劑層厚度為5~10μm。 (2) The adhesive tape for semiconductor wafer processing according to (1), wherein the thickness of the adhesive layer is 5 to 10 μm.
(3)如(1)或(2)之半導體晶圓加工用黏著帶，其特徵在於：於上述黏著劑層相對於黏著劑樹脂成分100質量份而含有鄰苯二甲酸二酯0.1~30質量份。 (3) The adhesive tape for semiconductor wafer processing according to (1) or (2), wherein the adhesive layer contains 0.1 to 30 mass of phthalic acid diester with respect to 100 parts by mass of the adhesive resin component. Share.
(4)如(1)至(3)中任一項之半導體晶圓加工用黏著帶，其特徵在於：上述基材片為聚氯乙烯樹脂。 (4) The adhesive tape for semiconductor wafer processing according to any one of (1) to (3), wherein the base material sheet is a polyvinyl chloride resin.
(5)如(1)至(4)中任一項之半導體晶圓加工用黏著帶，其特徵在於：上述半導體晶圓加工用黏著帶係用於半導體裝置之切片步驟。 (5) The adhesive tape for semiconductor wafer processing according to any one of (1) to (4), wherein the adhesive tape for processing a semiconductor wafer is used for a slicing step of a semiconductor device.
於本發明之半導體晶圓加工用黏著帶中，藉由將對基材片賦予壓入力時之緩和應力之時間變化(應力緩和性)利用其與自由壓入應力賦予位移起之經過時間的關係控制於特定範圍，可同時謀求崩裂之減少與易拾取性。尤其是可用作薄膜化半導體晶圓之加工用黏著帶。 In the adhesive tape for processing a semiconductor wafer of the present invention, the temporal change (stress relaxation property) of the relaxation stress when the press-in force is applied to the base material sheet is used to determine the elapsed time from the displacement by the free press-in stress. Controlled to a specific range, it is possible to simultaneously reduce cracking and easy pick-up. In particular, it can be used as an adhesive tape for processing thin film semiconductor wafers.
本發明之上述及其他特徵與優點應適當參照隨附圖式並根據下述記載而更明瞭。 The above and other features and advantages of the present invention will be made apparent by reference to the appended claims.
1‧‧‧基材片 1‧‧‧Substrate sheet
2‧‧‧黏著劑層 2‧‧‧Adhesive layer
10‧‧‧半導體晶圓加工用黏著帶 10‧‧‧Adhesive tape for semiconductor wafer processing
21‧‧‧壓縮試驗之載物台 21‧‧‧Loading stage of compression test
22‧‧‧壓縮試驗之壓頭 22‧‧‧Indenter for compression test
圖1係示意性地表示本發明之半導體晶圓加工用黏著帶之一實施形態之剖面圖。 Fig. 1 is a cross-sectional view schematically showing an embodiment of an adhesive tape for processing a semiconductor wafer of the present invention.
圖2係實施例中進行之反彈力測定中之壓縮試驗之測定模式圖。 Fig. 2 is a measurement mode diagram of a compression test in the measurement of the rebound force performed in the examples.
以下，詳細地說明本發明之較佳實施形態。 Hereinafter, preferred embodiments of the present invention will be described in detail.
<<半導體晶圓加工用黏著帶>> <<Adhesive tape for semiconductor wafer processing>>
圖1係表示本發明之半導體晶圓加工用黏著帶之較佳實施態樣的概略剖面圖，形成有基材片1及基材片1上之黏著劑層2。 Fig. 1 is a schematic cross-sectional view showing a preferred embodiment of an adhesive tape for processing a semiconductor wafer of the present invention, in which an adhesive layer 2 on a substrate sheet 1 and a substrate sheet 1 is formed.
本發明之半導體晶圓加工用黏著帶係基材片於對厚度方向以1mm/min壓入前端形狀R=5.0±0.1mm之壓頭而保持來自基材片之反彈力成為50N之位移時，自該狀態起之應力緩和之時間變化中，0~5秒之應力緩和之時間變化(A)為0.23~0.28N/s，且與5~10秒之應力緩和之時間變化(B)的比(B/A)為0.40~0.45。 When the adhesive tape substrate sheet for semiconductor wafer processing of the present invention is pressed into the indenter having a tip end shape of R=5.0±0.1 mm at a thickness of 1 mm/min in the thickness direction, and the rebound force from the substrate sheet is changed to 50 N, In the time change of the stress relaxation from this state, the time variation (A) of the stress relaxation of 0 to 5 seconds is 0.23 to 0.28 N/s, and the ratio of the time variation (B) of the stress relaxation of 5 to 10 seconds (B/A) is 0.40~0.45.
於利用切片刀片之切削中，因旋轉刀之高速旋轉而削去被黏接體及黏著帶之一部分。旋轉刀之旋轉方向相對於黏著帶面為垂直，故而於切片時黏著帶產生向旋轉刀之垂直下方向、即自黏著帶來看為壓入方向之壓縮力。 In the cutting by the dicing blade, a part of the adherend and the adhesive tape is cut off by the high-speed rotation of the rotary blade. The direction of rotation of the rotary blade is perpendicular to the surface of the adhesive tape, so that the adhesive tape generates a compressive force in the direction perpendicular to the downward direction of the rotary blade, that is, the self-adhesive direction.
一般而言，切片時，於切削被黏接體之同時切入至黏著帶之一部分。成為崩裂之要因的切片時之振動起因於由被黏接體產生之切削時阻力及由黏著帶產生之阻力。若著眼於黏著帶於切削時之阻力，則一般而言黏著劑層因切片而被完全分斷，故基材片針對壓入力之反彈力占主導地位。因此，若基材片被壓入時之應力緩和之時間變化較大，則可抑制晶片之振動，可減少崩裂。 In general, when slicing, it is cut into a part of the adhesive tape while being cut by the bonded body. The vibration at the time of slicing which is the cause of cracking is caused by the resistance at the time of cutting by the adherend and the resistance generated by the adhesive tape. If attention is paid to the resistance of the adhesive tape during cutting, the adhesive layer is generally completely broken by slicing, so that the rebound force of the base material against the pressing force is dominant. Therefore, if the time during which the stress relaxation of the base material sheet is pressed is largely changed, the vibration of the wafer can be suppressed, and cracking can be reduced.
又，此時所產生之反彈力係以接近一定值之方式進行時間變化，若該時間較短，則於切削鄰接線時保持穩定之狀態，因此難以受到其影響，可減少由晶片彼此之接觸引起之崩裂。 Further, the repulsive force generated at this time is temporally changed so as to approach a certain value. If the time is short, the state is maintained stable when the adjacent line is cut, so that it is difficult to be affected, and the contact with each other by the wafer can be reduced. Caused by the crack.
於本發明中，於基材片之對厚度方向以1mm/min壓入前端形狀R=5.0±0.1mm(R為曲率半徑)之壓頭而保持來自基材片之反彈力成為50N之位移時，其自該狀態起之應力緩和之時間變化中，0~5秒之應力 緩和之時間變化(A)為0.23~0.28N/s，且與超過5秒至10秒為止之應力緩和之時間變化(B)的比(B/A)為0.40~0.45。藉由將上述(A)及比(B/A)之值設定為上述範圍，可抑制切片步驟中產生崩裂，而防止拾取步驟之晶片拾取不良。於(A)未達0.23N/s之情形時，相對於壓入力之應力緩和速度並不足夠，晶片發生振動，產生崩裂。又，若超過0.28N/s，則應力緩和速度過快而緩和拾取時頂出銷造成之壓入力，有發生拾取不良之可能性。並且，於(B/A)未達0.40之情形時，基材片之反彈力停留於較高之狀態，因此存在於拾取時銷之頂出力過度傳達至晶片而使晶片產生裂痕的情況。又，於大於0.45之情形時，基材片之反彈力達到一定值需要時間，因此有即便移至接下來之鄰接晶片切削階段後反彈力仍在變化之可能性，有因鄰接晶片彼此之接觸而引起崩裂之虞。再者，一般而言反彈力隨著時間經過而減小，因此(B/A)為1以下。 In the present invention, when the substrate sheet is pressed into the indenter having a front end shape of R=5.0±0.1 mm (R is a radius of curvature) at a thickness of 1 mm/min in the thickness direction, and the repulsive force from the substrate sheet is changed to a displacement of 50 N. , the stress variation of the stress relaxation from this state, the stress of 0~5 seconds The time variation (A) of the relaxation is 0.23 to 0.28 N/s, and the ratio (B/A) of the time change (B) to the stress relaxation of more than 5 seconds to 10 seconds is 0.40 to 0.45. By setting the values of the above (A) and the ratio (B/A) to the above range, it is possible to suppress the occurrence of cracking in the slicing step and prevent the wafer picking failure in the picking step. When (A) is less than 0.23 N/s, the stress relaxation speed with respect to the press-in force is not sufficient, and the wafer vibrates to cause cracking. On the other hand, when it exceeds 0.28 N/s, the stress relaxation speed is too fast, and the pressing force by the ejector pin at the time of picking up is alleviated, and there is a possibility that pickup failure occurs. Further, when (B/A) is less than 0.40, the repulsive force of the substrate sheet stays at a high state, so that the ejection force of the pin is excessively transmitted to the wafer at the time of pickup, and the wafer is cracked. Moreover, in the case of more than 0.45, it takes time for the rebound force of the substrate sheet to reach a certain value, so there is a possibility that the rebound force is changed even after moving to the next adjacent wafer cutting stage, and the adjacent wafers are in contact with each other. And caused by the collapse. Furthermore, in general, the rebound force decreases as time passes, so (B/A) is 1 or less.
上述應力緩和之時間變化之測定可利用後述實施例中所示之方法進行測定。 The measurement of the temporal change of the above stress relaxation can be carried out by the method shown in the examples below.
此處，應力緩和之關係為於基材片之厚度為80μm、黏著劑層之厚度為100μm之狀態下所得之值，表示半導體晶圓加工用黏著帶之特性。因此，並非對本發明中之半導體晶圓加工用黏著帶之基材片與黏著劑層之厚度進行規定。 Here, the relationship of the stress relaxation is a value obtained in a state where the thickness of the base sheet is 80 μm and the thickness of the adhesive layer is 100 μm, and the characteristics of the adhesive tape for semiconductor wafer processing are shown. Therefore, the thickness of the base material sheet and the adhesive layer of the adhesive tape for semiconductor wafer processing of the present invention is not defined.
0~5秒之應力緩和之時間變化(A)較佳為0.23~0.25N/s。又，(B/A)較佳為0.41~0.44。 The time variation (A) of the stress relaxation of 0 to 5 seconds is preferably 0.23 to 0.25 N/s. Further, (B/A) is preferably from 0.41 to 0.44.
為了將應力緩和之關係如此調整，可利用基材片之樹脂成分、樹脂中之添加物、片材之厚度等的變更進行調整，又，於基材片為複合膜之情形時，除上述以外，亦可利用組合膜之樹脂成分或複合膜之厚度進行調整。又，亦可藉由黏著劑層之種類或厚度進行調整。 In order to adjust the relationship of the stress relaxation, the resin component of the base material sheet, the additive in the resin, the thickness of the sheet, and the like may be adjusted, and when the base material sheet is a composite film, in addition to the above, It can also be adjusted by using the resin component of the composite film or the thickness of the composite film. Moreover, it can also be adjusted by the kind or thickness of the adhesive layer.
作為構成基材片之樹脂，只要為上述應力緩和之時間變化之 範圍內，則並無特別限制，亦可併用其他樹脂或橡膠等可成形為片狀者。 The resin constituting the substrate sheet is changed in time as described above for stress relaxation. In the range, it is not particularly limited, and other resins or rubbers may be used in combination to form a sheet.
例如，可使用如下等：聚丙烯、高密度聚乙烯(HDPE)、低密度聚乙烯(LDPE)、直鏈低密度聚乙烯(LLDPE)、乙烯-丙烯共聚物、丙烯共聚物、乙烯-丙烯-二烯共聚物硫化橡膠、聚丁烯、聚丁二烯、聚甲基戊烯、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸甲酯共聚物、乙烯-(甲基)丙烯酸乙酯共聚物、乙烯-(甲基)丙烯酸丁酯共聚物、聚氯乙烯、氯乙烯-乙酸乙烯酯共聚物、乙烯-氯乙烯-乙酸乙烯酯共聚物、聚胺酯、聚醯胺、離子聚合物、腈橡膠、丁基橡膠、苯乙烯-異戊二烯橡膠、苯乙烯-丁二烯橡膠、天然橡膠及其氫化物或改質物、各種離子聚合物樹脂等。 For example, the following may be used: polypropylene, high density polyethylene (HDPE), low density polyethylene (LDPE), linear low density polyethylene (LLDPE), ethylene-propylene copolymer, propylene copolymer, ethylene-propylene- Diene copolymer vulcanized rubber, polybutene, polybutadiene, polymethylpentene, ethylene-(meth)acrylic acid copolymer, ethylene-methyl (meth) acrylate copolymer, ethylene-(meth)acrylic acid Ethyl ester copolymer, ethylene-butyl (meth)acrylate copolymer, polyvinyl chloride, vinyl chloride-vinyl acetate copolymer, ethylene-vinyl chloride-vinyl acetate copolymer, polyurethane, polyamine, ionic polymer , nitrile rubber, butyl rubber, styrene-isoprene rubber, styrene-butadiene rubber, natural rubber and its hydride or modified substance, various ionic polymer resins, and the like.
再者，離子聚合物樹脂係使用聚乙烯、直鏈狀低密度聚乙烯、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物等。所使用之金屬離子可有K、Na、Ca、Zn等各種選擇。其中，較佳為利用金屬離子使乙烯與(甲基)丙烯酸共聚物中之羧基之至少一部分中和交聯而成的二元共聚物系離子聚合物樹脂，或者利用金屬離子使乙烯與(甲基)丙烯酸及α,β-不飽和羧酸酯之三元共聚物中之羧基之至少一部分中和而成的三元共聚物系離子聚合物樹脂。 Further, as the ionic polymer resin, polyethylene, linear low-density polyethylene, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer or the like is used. The metal ions used may have various options such as K, Na, Ca, and Zn. Among them, a binary copolymer-based ionic polymer resin obtained by neutralizing at least a part of a carboxyl group in an ethylene (meth)acrylic acid copolymer with a metal ion, or a metal ion to make ethylene and (a) is preferably used. A ternary copolymer-based ionic polymer resin obtained by neutralizing at least a part of a carboxyl group in a terpolymer of acrylic acid and an α,β-unsaturated carboxylic acid ester.
作為上述金屬離子，可列舉例如Na離子、K離子或Li離子等鹼金屬離子，Ca離子、Mg離子、Zn離子等二價金屬離子，例如Al離子或Nd離子等三價金屬離子，及該等之混合物；就耐久性等而言，可較佳地使用Na離子、Zn離子或Li離子等。 Examples of the metal ions include alkali metal ions such as Na ions, K ions, and Li ions, and divalent metal ions such as Ca ions, Mg ions, and Zn ions, such as trivalent metal ions such as Al ions and Nd ions, and the like. A mixture of Na ions, Zn ions, Li ions, or the like is preferably used in terms of durability and the like.
若以商品名例示上述二元共聚物系離子聚合物樹脂之具體例，則可列舉：由DuPont-Mitsui Polychemicals股份有限公司市售之Himilan 1605(Na)、Himilan 1706(Zn)、Himilan 1707(Na)、Himilan AM7318(Na)、Himilan AM7315(Zn)、Himilan AM7317(Zn)、Himilan AM7311(Mg)或Himilan MK7320(K)等。進而，作為由Dupont公司市售之離子聚合物樹脂， 可列舉：Surlyn 8920(Na)、Surlyn 8940(Na)、Surlyn AD8512(Na)、Surlyn 9910(Zn)、Surlyn AD8511(Zn)、Surlyn 7930(Li)或Surlyn 7940(Li)等。又，作為由Exxon Chemical公司市售之離子聚合物樹脂，可列舉：Iotek 7010(Zn)或Iotek 8000(Na)等。 Specific examples of the above-mentioned binary copolymer-based ionic polymer resin are exemplified by Himilan 1605 (Na), Himilan 1706 (Zn), and Himilan 1707 (Na) commercially available from DuPont-Mitsui Polychemicals Co., Ltd. ), Himilan AM7318 (Na), Himilan AM7315 (Zn), Himilan AM7317 (Zn), Himilan AM7311 (Mg) or Himilan MK7320 (K). Further, as an ionic polymer resin commercially available from Dupont, For example, Surlyn 8920 (Na), Surlyn 8940 (Na), Surlyn AD8512 (Na), Surlyn 9910 (Zn), Surlyn AD8511 (Zn), Surlyn 7930 (Li) or Surlyn 7940 (Li), and the like. Further, examples of the ionic polymer resin commercially available from Exxon Chemical Co., Ltd. include Iotek 7010 (Zn) or Iotek 8000 (Na).
若以商品名例示上述三元共聚物系離子聚合物樹脂之具體例，則可列舉：由DuPont-Mitsui Polychemicals股份有限公司市售之Himilan 1856(Na)、Himilan 1855(Zn)、Himilan AM7316(Zn)等，由Dupont公司市售之Surlyn AD8265(Na)、Surlyn AD8269(Na)等。再者，上述離子聚合物樹脂之商品名後之括弧內記載之Na、Zn、K、Li、Mg等表示該等之中和金屬離子之金屬種類。 Specific examples of the above terpolymer-based ionic polymer resin are exemplified by Himilan 1856 (Na), Himilan 1855 (Zn), and Himilan AM7316 (Zn) commercially available from DuPont-Mitsui Polychemicals Co., Ltd. ), etc., Surlyn AD8265 (Na), Surlyn AD8269 (Na), etc., marketed by Dupont. Further, Na, Zn, K, Li, Mg, and the like described in the parentheses after the trade name of the ionic polymer resin indicate the metal species of the neutralizing metal ions.
該等樹脂之中，較佳為聚氯乙烯樹脂、乙烯-(甲基)丙烯酸共聚物、或除乙烯及(甲基)丙烯酸以外亦包含(甲基)丙烯酸酯等其他共聚合成分之三元以上之共聚物、以及離子聚合物樹脂。 Among these resins, a polyvinyl chloride resin, an ethylene-(meth)acrylic acid copolymer, or a ternary other copolymerized component such as (meth) acrylate other than ethylene and (meth)acrylic acid is preferable. The above copolymers, as well as ionic polymer resins.
其中，乙烯-(甲基)丙烯酸共聚物中，(甲基)丙烯酸之含量較佳為1~20質量%，更佳為1~15質量%。 Among them, the content of (meth)acrylic acid in the ethylene-(meth)acrylic acid copolymer is preferably from 1 to 20% by mass, more preferably from 1 to 15% by mass.
又，離子聚合物樹脂較佳為乙烯-(甲基)丙烯酸系之二元或三元(除上述以外以及(甲基)丙烯酸酯之三元)以上。 Further, the ionic polymer resin is preferably a binary or ternary (except for the above and a ternary (meth) acrylate) of ethylene-(meth)acrylic acid.
又，上述較佳之共聚物或樹脂之中，尤佳為聚氯乙烯樹脂。 Further, among the above preferred copolymers or resins, a polyvinyl chloride resin is particularly preferred.
於使用聚氯乙烯之情形時，可適當使用穩定劑、塑化劑。 In the case of using polyvinyl chloride, a stabilizer or a plasticizer can be suitably used.
該等構成基材片之樹脂可設為單層或多層構成，於本發明中較佳為多層構成。 The resin constituting the substrate sheet may be a single layer or a multilayer structure, and in the present invention, it is preferably a multilayer structure.
於設為多層構成之情形時，黏著劑層側之樹脂較佳為聚氯乙烯、乙烯-(甲基)丙烯酸共聚物，與設置黏著劑層之側相反側之膜之樹脂較佳為聚氯乙烯、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸-(甲基)丙烯酸酯共聚物或離子聚合物樹脂。 In the case of a multi-layered structure, the resin on the side of the adhesive layer is preferably a polyvinyl chloride or ethylene-(meth)acrylic acid copolymer, and the resin of the film on the side opposite to the side on which the adhesive layer is provided is preferably a polychlorinated resin. Ethylene, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid-(meth)acrylate copolymer or ionic polymer resin.
基材片之厚度並無特別限定，就易操作性而言，較佳為50~200μm，更佳為70~110μm。 The thickness of the substrate sheet is not particularly limited, and is preferably from 50 to 200 μm, more preferably from 70 to 110 μm, in terms of ease of handling.
為了進一步提高密接性，亦可對基材片之與黏著劑層接觸之面實施電暈處理、底塗等處理。 In order to further improve the adhesion, the surface of the substrate sheet that is in contact with the adhesive layer may be subjected to a corona treatment or a primer treatment.
作為構成黏著劑層之黏著劑，較佳為放射線硬化型，例如較佳地使用日本特公平1-56112號公報、日本特開平7-135189號公報等中記載者，但並不限定於該等。只要具有藉由放射線而硬化並三維網狀化之性質即可，例如可使用對通常之橡膠系或(甲基)丙烯酸系壓敏性基礎樹脂(聚合物)調配分子中具有至少2個光聚合性碳-碳雙鍵之低分子量化合物(以下稱為光聚合性化合物)及光聚合起始劑而成者。 The adhesive constituting the adhesive layer is preferably a radiation-curable type. For example, it is preferably used in the Japanese Patent Publication No. Hei. . As long as it has a property of being hardened by radiation and three-dimensionally reticulating, for example, it is possible to use at least 2 photopolymerizations in a compound of a conventional rubber-based or (meth)acrylic pressure-sensitive base resin (polymer). A low molecular weight compound (hereinafter referred to as a photopolymerizable compound) and a photopolymerization initiator which are carbon-carbon double bonds.
此處，所謂放射線，意指如紫外線之光線、或如電子束之游離放射線。所謂「(甲基)丙烯酸」，意指「丙烯酸」或「甲基丙烯酸」之任一者或兩者。 Here, the term "radiation" means light such as ultraviolet rays or free radiation such as an electron beam. The term "(meth)acrylic acid" means either or both of "acrylic acid" or "methacrylic acid".
上述橡膠系或丙烯酸系之基礎樹脂可使用：天然橡膠、各種合成橡膠等橡膠系聚合物，或聚(甲基)丙烯酸烷基酯、(甲基)丙烯酸烷基酯、(甲基)丙烯酸烷基酯與可與其共聚合之其他不飽和單體的共聚合物等(甲基)丙烯酸系聚合物。 The rubber-based or acrylic-based base resin may be a rubber-based polymer such as natural rubber or various synthetic rubbers, or a polyalkyl (meth)acrylate, an alkyl (meth)acrylate, or an alkyl (meth)acrylate. A (meth)acrylic polymer such as a copolymer of a base ester and another unsaturated monomer copolymerizable therewith.
(甲基)丙烯酸系聚合物並無特別限制，可設為質量平均分子量為10萬~100萬、玻璃轉移溫度(Tg)為-50~0℃之範圍。 The (meth)acrylic polymer is not particularly limited, and may have a mass average molecular weight of 100,000 to 1,000,000 and a glass transition temperature (Tg) of -50 to 0 °C.
又，藉由在上述黏著劑中混合異氰酸酯系硬化劑，可將初始之接著力設定為任意值。作為上述硬化劑，具體而言為多元異氰酸酯化合物，例如可使用：2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-苯二甲基二異氰酸酯、1,4-二甲苯二異氰酸酯、二苯基甲烷-4,4'-二異氰酸酯、二苯基甲烷-2,4'-二異氰酸酯、3-甲基二苯基甲烷二異氰酸酯、六亞甲基二異氰酸酯、異佛爾酮二異氰酸酯、二環己基甲烷-4,4'-二異氰酸酯、二環己基甲烷-2,4'-二異氰酸酯、離胺酸二異氰酸酯等。 Further, by mixing the isocyanate-based curing agent with the above-mentioned adhesive, the initial adhesion can be set to an arbitrary value. As the above-mentioned curing agent, specifically, a polyvalent isocyanate compound, for example, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-benzenedimethyl diisocyanate, 1,4-xylene can be used. Diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophor Keto diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, leucine diisocyanate, and the like.
硬化劑之含量只要根據所需之黏著力而進行調整即可，相對於黏著劑之上述基礎樹脂共聚物100質量份，較佳為0.01~10質量份，更佳為0.1~5質量份。 The content of the curing agent may be adjusted according to the desired adhesive strength, and is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the base resin copolymer of the adhesive.
放射線硬化型黏著劑藉由在黏著劑中混入光聚合起始劑，而可顯現藉由放射線照射而聚合硬化之反應。 The radiation-curable adhesive can exhibit a polymerization hardening reaction by radiation irradiation by mixing a photopolymerization initiator in an adhesive.
作為上述光聚合起始劑，具體而言，可列舉：安息香、安息香甲醚、安息香***、安息香異丙醚、苄基二苯硫醚、一硫化四甲基秋蘭姆、偶氮二異丁腈、二苯偶醯、雙乙醯、β-氯蒽醌等。 Specific examples of the photopolymerization initiator include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, and azobisisobutylene. Nitrile, diphenyl oxime, diacetyl oxime, β-chloropurine, and the like.
黏著劑層之厚度較佳為5~10μm。若薄於5μm，則難以獲得穩定製造性，又，若厚於10μm，則切片時之晶片振動之影響變大。 The thickness of the adhesive layer is preferably 5 to 10 μm. If it is thinner than 5 μm, it is difficult to obtain stable manufacturability, and if it is thicker than 10 μm, the influence of wafer vibration at the time of slicing becomes large.
又，藉由使如上述之黏著劑層中包含光聚合性化合物及光聚合起始劑，可藉由照射放射線而進行硬化，使黏著劑之黏著力降低，而自被黏接體容易地剝離接著劑層。 In addition, by including a photopolymerizable compound and a photopolymerization initiator in the above-mentioned adhesive layer, it is possible to cure by irradiation with radiation, thereby lowering the adhesive force of the adhesive and easily peeling off from the adherend. Then the agent layer.
黏著劑層之形成可與通常之切片膠帶相同地於基材片上塗佈黏著劑而製造。 The formation of the adhesive layer can be carried out by applying an adhesive to the substrate sheet in the same manner as a conventional dicing tape.
於本發明中，較佳為黏著劑層含有塑化劑。藉由使用塑化劑，可使黏著劑之柔軟性提高，緩和切片時之旋轉刀之應力。塑化劑之量、種類並無特別限制，可使用一般之塑化劑。 In the present invention, it is preferred that the adhesive layer contains a plasticizer. By using a plasticizer, the flexibility of the adhesive can be improved, and the stress of the rotary blade at the time of slicing can be alleviated. The amount and type of the plasticizer are not particularly limited, and a general plasticizer can be used.
作為上述塑化劑，可列舉：芳香族酯、脂肪族酯、磷酸酯、醯胺化合物、脂肪族醇、石蠟類。其中，較佳為芳香族酯、磷酸酯，更佳為芳香族酯。作為芳香族酯，其中較佳為鄰苯二甲酸二酯，更佳為醇部之碳數為6~12者，最佳為鄰苯二甲酸二辛酯。 Examples of the plasticizer include an aromatic ester, an aliphatic ester, a phosphate, a guanamine compound, an aliphatic alcohol, and a paraffin. Among them, an aromatic ester or a phosphate ester is preferred, and an aromatic ester is more preferred. As the aromatic ester, among them, a phthalic acid diester is preferable, and a carbon number of the alcohol portion is preferably 6 to 12, and most preferably dioctyl phthalate.
作為芳香族酯，例如可列舉：鄰苯二甲酸二辛酯、鄰苯二甲酸二己酯、鄰苯二甲酸二(十二烷基)酯、鄰苯二甲酸或者對苯二甲酸之二(2-乙基己基)酯、間苯二甲酸二丁酯、偏苯三甲酸三異丙酯等，作為磷酸酯， 可列舉：磷酸三甲酚酯、磷酸三(2-乙基己基)酯等。 Examples of the aromatic ester include dioctyl phthalate, dihexyl phthalate, di(dodecyl) phthalate, phthalic acid or terephthalic acid ( 2-ethylhexyl) ester, dibutyl isophthalate, triisopropyl trimellitate, etc., as a phosphate ester, Examples thereof include tricresyl phosphate and tris(2-ethylhexyl) phosphate.
塑化劑之添加量係相對於黏著劑樹脂成分100質量份較佳為0.1~30質量份，更佳為0.1~25質量份，進而較佳為0.1~10質量份。若添加量少於0.1質量份，則不顯現上述應力緩和。又，若添加量多於30質量份，則黏著劑層變得過於柔軟，崩裂惡化。 The amount of the plasticizer added is preferably 0.1 to 30 parts by mass, more preferably 0.1 to 25 parts by mass, even more preferably 0.1 to 10 parts by mass, per 100 parts by mass of the adhesive resin component. If the amount added is less than 0.1 part by mass, the above stress relaxation does not occur. Moreover, when the amount added is more than 30 parts by mass, the adhesive layer becomes too soft and the cracking is deteriorated.
於使用本發明之半導體晶圓加工用黏著帶時，可依據通常之方法使用，例如，將半導體晶圓加工用黏著帶貼附於半導體晶圓而固定後，利用旋轉刀將半導體晶圓切割成晶片。其後，自上述黏著帶之基材側照射紫外線或電子束，繼而使用專用治具將上述黏著帶呈放射狀進行擴大而使晶片間空開一定間隔(擴展)後，利用頂針等將晶片頂出，並且藉由利用真空夾頭、真空鑷子等進行吸附之方法等進行拾取，與此同時進行安裝即可。 When the adhesive tape for semiconductor wafer processing of the present invention is used, it can be used according to a usual method. For example, after attaching an adhesive tape for processing a semiconductor wafer to a semiconductor wafer and fixing it, the semiconductor wafer is cut by a rotary blade. Wafer. Thereafter, the substrate or the side of the adhesive tape is irradiated with ultraviolet rays or electron beams, and then the adhesive tape is radially expanded by a dedicated jig to open the wafers at a predetermined interval (expansion), and then the wafer is topped by a thimble or the like. The pick-up is performed by a method such as suction using a vacuum chuck, a vacuum tweezers, or the like, and the mounting is performed at the same time.
又，應用本發明之半導體晶圓之厚度較佳為200~75μm，更佳為100~75μm，於其厚度較薄之情形時效果較為顯著。 Further, the thickness of the semiconductor wafer to which the present invention is applied is preferably 200 to 75 μm, more preferably 100 to 75 μm, and the effect is remarkable when the thickness thereof is thin.
[實施例] [Examples]
以下，基於實施例更詳細地說明本發明，但本發明並不限定於該等實施例。 Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to the examples.
以下，基於實施例進一步說明本發明，但本發明並不限定於該等。 Hereinafter, the present invention will be further described based on examples, but the present invention is not limited thereto.
<構成黏著劑層之樹脂組成物> <Resin composition constituting the adhesive layer>
作為構成黏著劑層之樹脂組成物，使用以下之樹脂組成物A~E。 As the resin composition constituting the pressure-sensitive adhesive layer, the following resin compositions A to E were used.
(構成黏著劑層之樹脂組成物A) (Resin composition A constituting the adhesive layer)
相對於丙烯酸系基礎聚合物(由丙烯酸2-乙基己酯、丙烯酸酯甲酯、丙烯酸2-羥基乙酯所構成之共聚物，質量平均分子量30萬，玻璃轉移溫度-35℃)100質量份，添加聚異氰酸酯化合物(Nippon Polyurethane公司製造， 商品名Coronate L)2質量份、作為具有光聚合性碳-碳雙鍵之化合物的四羥甲基甲烷四丙烯酸酯50質量份、作為光聚合起始劑之日本Ciba-Geigy公司製造之Irgacure-184(商品名)0.5質量份及鄰苯二甲酸二辛酯0.1質量份並進行混合，而製備放射線硬化性之黏著劑樹脂組成物A。 100 parts by mass relative to the acrylic base polymer (copolymer composed of 2-ethylhexyl acrylate, acrylate methyl ester, 2-hydroxyethyl acrylate, mass average molecular weight 300,000, glass transition temperature - 35 ° C) , a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd.) 2 parts by mass of Coronate L), 50 parts by mass of tetramethylol methane tetraacrylate as a compound having a photopolymerizable carbon-carbon double bond, and Irgacure manufactured by Ciba-Geigy Co., Ltd., which is a photopolymerization initiator. 840 (trade name) 0.5 parts by mass and 0.1 parts by mass of dioctyl phthalate were mixed and mixed to prepare a radiation curable adhesive resin composition A.
(構成黏著劑層之樹脂組成物B) (Resin composition B constituting the adhesive layer)
將鄰苯二甲酸二辛酯設為25質量份，除此以外，以與黏著劑樹脂組成物A相同之方式製備構成黏著劑層之樹脂組成物B。 The resin composition B constituting the adhesive layer was prepared in the same manner as the adhesive resin composition A except that the amount of the dioctyl phthalate was changed to 25 parts by mass.
(構成黏著劑層之樹脂組成物C) (Resin composition C constituting the adhesive layer)
將鄰苯二甲酸二辛酯設為30質量份，除此以外，以與黏著劑樹脂組成物A相同之方式進行製備。 The preparation was carried out in the same manner as in the adhesive resin composition A except that the dioctyl phthalate was 30 parts by mass.
(構成黏著劑之樹脂組成物D) (Resin composition D constituting the adhesive)
使由丙烯酸丁酯(79質量%)、甲基丙烯酸(1質量%)、丙烯酸2-羥基乙酯(20質量%)所構成之丙烯酸系共聚物100質量份與作為具有光聚合性碳-碳雙鍵及官能基之化合物的2-甲基丙烯醯氧基乙基異氰酸酯(昭和電工公司製造，商品名Karenz MOI)0.2質量份發生反應，而獲得對主鏈之重複單位鍵結有殘基之聚合物，上述殘基具有丙烯酸系單體部，上述丙烯酸系單體部具有含放射線硬化性碳-碳雙鍵之基。該聚合物之質量平均分子量為60萬。此處，質量平均分子量係藉由凝膠滲透層析儀(Waters公司製造，商品名150-C ALC/GPC)對溶解於四氫呋喃中所得之1%溶液進行測定，並對所得之值進行聚苯乙烯換算而算出。相對於上述聚合物100質量份而添加聚異氰酸酯化合物(Nippon Polyurethane公司製造，商品名Coronate L)0.5質量份、作為光聚合起始劑之日本Ciba-Geigy公司製造之Irgacure-184(商品名)0.5質量份及鄰苯二甲酸二辛酯0.08質量份並進行混合，而製備放射線硬化性之黏著劑樹脂組成物D。 100 parts by mass of an acrylic copolymer composed of butyl acrylate (79% by mass), methacrylic acid (1% by mass), and 2-hydroxyethyl acrylate (20% by mass) as a photopolymerizable carbon-carbon 0.2 parts by mass of 2-methylpropenyloxyethyl isocyanate (manufactured by Showa Denko Co., Ltd., trade name Karenz MOI) of a compound having a double bond and a functional group is reacted to obtain a residue bonded to a repeating unit of the main chain. In the polymer, the residue has an acrylic monomer portion, and the acrylic monomer portion has a group containing a radiation-curable carbon-carbon double bond. The polymer had a mass average molecular weight of 600,000. Here, the mass average molecular weight is measured by a gel permeation chromatography (manufactured by Waters, trade name: 150-C ALC/GPC) for a 1% solution obtained by dissolving in tetrahydrofuran, and the obtained value is subjected to polyphenylene. Calculated in terms of ethylene. 0.5 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name Coronate L), and Irgacure-184 (trade name) 0.5 manufactured by Ciba-Geigy Co., Ltd., which is a photopolymerization initiator, was added to 100 parts by mass of the polymer. The radiation-curable adhesive resin composition D was prepared by mixing and mixing 0.08 parts by mass of dioctyl phthalate.
(構成黏著劑層之樹脂組成物E) (Resin composition E constituting the adhesive layer)
將鄰苯二甲酸二辛酯設為0.2質量份，除此以外，以與黏著劑樹脂組成物D相同之方式進行製備。 The preparation was carried out in the same manner as in the adhesive resin composition D except that the dioctyl phthalate was 0.2 parts by mass.
<構成基材片之樹脂組成物> <Resin composition constituting the substrate sheet>
作為構成基材片之樹脂組成物，使用以下之樹脂F~I。又，作為基材片，使用片材J。 As the resin composition constituting the base sheet, the following resins F to I were used. Moreover, as a base material sheet, the sheet J was used.
(樹脂F)聚丙烯Prime Polymer公司製造「F724NP」 (Resin F) Polypropylene Prime Polymer Company manufactures "F724NP"
(樹脂G)乙烯-甲基丙烯酸共聚物DuPont-Mitsui Polychemicals公司製造製品名「N0908C」(甲基丙烯酸含量：9質量%) (Resin G) Ethylene-methacrylic acid copolymer product name "N0908C" manufactured by DuPont-Mitsui Polychemicals Co., Ltd. (methacrylic acid content: 9 mass%)
(樹脂H)乙烯-乙酸乙烯酯共聚物Nippon Unicar公司製造「NUC-3758」 (Resin H) Ethylene-vinyl acetate copolymer Nippon Unicar manufactures "NUC-3758"
(樹脂I)乙烯-甲基丙烯酸-(丙烯酸2-甲基-丙酯)-Zn2+離子聚合物樹脂DuPont-Mitsui Polychemicals公司製造「Himilan AM7316」 (Resin I) Ethylene-methacrylic acid-(2-methyl-propyl acrylate)-Zn 2+ ionomer resin "Himilan AM7316" manufactured by DuPont-Mitsui Polychemicals
(片材J)氯乙烯片材 厚度80μm (Sheet J) Vinyl chloride sheet Thickness 80μm
將樹脂F~樹脂I調整為下述表1、2所示之構成，利用雙軸混練機於約200℃進行膜擠出成形，而以厚度為表1、2所示者來製造作為各基材樹脂膜之基材片。繼而，如表1、2所示，於各基材片之與黏著劑層接觸之層以乾燥後之厚度成為下述表1、2之構成之方式塗佈上述黏著劑，形成黏著劑層，而製造如圖1之構造之實施例1~9、比較例1、2之半導體晶圓加工用黏著帶。 The resin F to the resin I were adjusted to the structures shown in the following Tables 1 and 2, and were subjected to film extrusion molding at about 200 ° C by a biaxial kneading machine, and were produced as the respective bases as shown in Tables 1 and 2. A substrate sheet of a resin film. Then, as shown in Tables 1 and 2, the adhesive layer was applied to the layer in contact with the adhesive layer of each of the base material sheets so that the thickness after drying became the following Tables 1 and 2, thereby forming an adhesive layer. The adhesive tape for semiconductor wafer processing of Examples 1 to 9 and Comparative Examples 1 and 2 of the structure shown in Fig. 1 was produced.
(反彈力之時間變化評價) (evaluation of the time change of the rebound force)
將所製作之基材片採取為25mm×40mm，利用與黏著帶製作時相同之方法以成為100μm之方式塗佈各黏著帶之黏著劑，而製作測定用樣品。其後，使用Instron拉伸試驗機(雙柱(twin columns)桌上型5567)，於以下之條件下進行測定。 The base material sheet produced was set to 25 mm × 40 mm, and the adhesive for each adhesive tape was applied so as to be 100 μm in the same manner as in the production of the adhesive tape to prepare a sample for measurement. Thereafter, the measurement was carried out under the following conditions using an Instron tensile tester (twin columns table 5567).
(反彈力測定條件) (rebound force measurement conditions)
裝置：Instron拉伸試驗機(雙柱桌上型5567) Device: Instron tensile testing machine (double column table 5567)
壓縮速度：1.0mm/min Compression speed: 1.0mm/min
試驗溫度：23℃ Test temperature: 23 ° C
壓頭：彎曲試驗(JIS K 7171)之壓頭 Indenter: Indenter of bending test (JIS K 7171)
壓頭前端形狀：R=5.0±0.1mm Head shape of the indenter: R=5.0±0.1mm
壓入方向：自基材片側壓縮 Pressing direction: compression from the substrate side
(試驗方法) (experiment method)
一)如圖2般於壓縮平行板上以黏著劑層朝下之方式試驗設置樣品 a) As shown in Figure 2, test the sample on the compression parallel plate with the adhesive layer facing down.
二)使彎曲壓頭接觸黏著帶 b) make the bending head contact the adhesive tape
三)將位移及反彈力設置為0 c) Set the displacement and rebound force to 0
四)以速度1.0mm/min進行壓縮直至負載反彈力50N為止 4) Compress at a speed of 1.0mm/min until the load rebound force is 50N
五)將反彈力成為50N時作為開始時刻，於維持壓頭位置之狀態下每隔1.0秒採集反彈力值 5) When the rebound force becomes 50N as the starting time, the rebound force value is collected every 1.0 seconds while maintaining the head position.
六)將自開始時刻起經過0~5秒之反彈力之時間變化設為(A)(單位：N/s) 6) Set the time change of the rebound force from 0 to 5 seconds from the start time to (A) (unit: N/s)
七)將自開始時刻起經過5秒~10秒之反彈力之時間變化設為(B)(單位：N/s) VII) Set the time change of the rebound force from 5 seconds to 10 seconds from the start time to (B) (unit: N/s)
八)算出(A)與(B)之比(B/A) VIII) Calculate the ratio of (A) to (B) (B/A)
於實施例1~9及比較例1、2之半導體晶圓加工用黏著片材上貼合直徑6英吋、厚度100μm之附虛設電路面之矽晶圓，使用切片裝置(DISCO公司製造，DAD-340)以晶片尺寸成為10mm見方之方式進行切片步驟。 In the adhesive sheets for semiconductor wafer processing of Examples 1 to 9 and Comparative Examples 1 and 2, a wafer having a dummy circuit surface having a diameter of 6 inches and a thickness of 100 μm was bonded, and a slicing device (DADC, DAD) was used. - 340) The slicing step was carried out in such a manner that the wafer size became 10 mm square.
(切片條件) (slicing condition)
切片機：DISCO公司製造，DAD-340 Slicer: manufactured by DISCO, DAD-340
旋轉刀轉速：40000rpm Rotary knife speed: 40,000 rpm
切削速度：100mm/s Cutting speed: 100mm/s
切削水流量：20mL Cutting water flow: 20mL
旋轉刀切割矽晶圓後，切入黏著片材之深度：10μm After cutting the wafer by a rotary knife, the depth of the adhesive sheet is cut: 10 μm
(拾取) (pick up)
將矽晶圓貼合於半導體晶圓加工用黏著片材之黏著劑層後，對矽晶圓進行切片，將半導體晶圓加工用黏著片材呈放射狀進行擴大而使晶片間空開一定間隔(擴展)，自切片膠帶之基材片側照射紫外線500mJ/mm2而使黏著劑層硬化後，使用Dice Picker裝置(Canon Machinery公司製造之CAP-300II)拾取已單片化之半導體晶片。於下述拾取條件下拾取任意50個晶片，計數成功拾取之晶片數，將成功拾取全部50個半導體晶片之情形設為◎，成功拾取47~49個半導體晶片之情形設為○，成功拾取44~46個半導體晶片之情形設為△，此外之情形設為×，評價拾取性。 After bonding the tantalum wafer to the adhesive layer of the adhesive sheet for semiconductor wafer processing, the wafer is sliced, and the adhesive sheet for semiconductor wafer processing is radially expanded to open spaces between the wafers. (Expansion) After the adhesive sheet layer was cured by irradiating ultraviolet rays of 500 mJ/mm 2 from the side of the substrate sheet of the dicing tape, the diced semiconductor wafer was picked up using a Dice Picker apparatus (CAP-300II manufactured by Canon Machinery Co., Ltd.). Pick up any 50 wafers under the following pick-up conditions, count the number of wafers successfully picked up, set the situation of successfully picking up all 50 semiconductor wafers to ◎, and successfully pick up 47-49 semiconductor wafers, set to ○, successfully pick up 44 The case of ~46 semiconductor wafers was set to Δ, and the case was set to ×, and the pick-up property was evaluated.
(拾取條件) (pick condition)
Dice Picker裝置：Canon Machinery公司製造之「CAP-300II」 Dice Picker device: "CAP-300II" manufactured by Canon Machinery
銷數：4根 Number of sales: 4
銷之間隔：7.8×7.8mm Pin spacing: 7.8 × 7.8mm
銷前端曲率：0.25mm Pin front curvature: 0.25mm
銷頂出量：0.40mm Pin ejection: 0.40mm
(崩裂) (crack)
利用光學顯微鏡對拾取後之任意50個晶片之崩裂進行測定。將自端部起之崩裂高度均為10μm以下之情形設為◎，均為15μm以下之情形設為○，均為25μm以下之情形設為△，大於此之情形設為×。 The cracking of any 50 wafers after picking was measured using an optical microscope. The case where the crack height from the end portion is 10 μm or less is ◎, and the case where the crack height is 15 μm or less is ○, and the case where the thickness is 25 μm or less is Δ, and the case where it is larger than this is ×.
如表1、2所示，實施例1~9之半導體晶圓加工用黏著帶與比較例1~6之半導體晶圓加工用黏著帶相比，可同時實現崩裂之減少與拾取性。 As shown in Tables 1 and 2, the adhesive tape for semiconductor wafer processing of Examples 1 to 9 can simultaneously achieve reduction in chipping and pick-up property as compared with the adhesive tape for semiconductor wafer processing of Comparative Examples 1 to 6.
已將本發明與其實施態樣一起進行了說明，可認為，只要我等未特別指定，則不欲將我等之發明限定於說明之任一細節，應不違反隨附之申請專利範圍所揭示之發明之精神與範圍而廣義地加以解釋。 The present invention has been described in connection with the embodiments thereof, and it is to be understood that the invention is not limited to the details of the description, and is not to be construed as a The spirit and scope of the invention are broadly construed.
本案係主張基於2013年3月5日於日本提出專利申請之日本特願2013-43566之優先權者，此處以其為參照並將其內容作為本說明書之記載之一部分而組入。 The present application claims the priority of Japanese Patent Application No. 2013-43566, the entire disclosure of which is hereby incorporated by reference.
1‧‧‧基材片 1‧‧‧Substrate sheet
2‧‧‧黏著劑層 2‧‧‧Adhesive layer
10‧‧‧半導體晶圓加工用黏著帶 10‧‧‧Adhesive tape for semiconductor wafer processing
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| JP2013043566A JP5480415B1 (en) | 2012-10-11 | 2013-03-05 | Adhesive tape for semiconductor wafer processing |
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| TW201444942A true TW201444942A (en) | 2014-12-01 |
| TWI548717B TWI548717B (en) | 2016-09-11 |
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| JP (1) | JP5480415B1 (en) |
| KR (1) | KR101748924B1 (en) |
| CN (1) | CN104335329B (en) |
| TW (1) | TWI548717B (en) |
| WO (1) | WO2014136777A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013172328A1 (en) * | 2012-05-14 | 2013-11-21 | リンテック株式会社 | Sheet having adhesive resin layer attached thereto, and method for producing semiconductor device |
| JP5697061B1 (en) * | 2014-03-24 | 2015-04-08 | 古河電気工業株式会社 | Adhesive tape for semiconductor wafer processing and method for processing semiconductor wafer |
| JP7041475B2 (en) * | 2017-07-04 | 2022-03-24 | 日東電工株式会社 | Manufacturing method of dicing tape, dicing die bond film, and semiconductor device |
| JP7446773B2 (en) * | 2019-11-07 | 2024-03-11 | 日東電工株式会社 | Dicing tape and dicing die bond film |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3520996B2 (en) * | 1991-12-24 | 2004-04-19 | 三菱化学ポリエステルフィルム株式会社 | Adhesive sheet for attaching semiconductor wafers |
| JP3383227B2 (en) * | 1998-11-06 | 2003-03-04 | リンテック株式会社 | Semiconductor wafer backside grinding method |
| JP2002220571A (en) | 2001-01-24 | 2002-08-09 | Nitto Denko Corp | Protective sheet for processing semiconductor wafer |
| JP5059559B2 (en) * | 2006-12-05 | 2012-10-24 | リンテック株式会社 | Laser dicing sheet and chip body manufacturing method |
| WO2009048061A1 (en) * | 2007-10-09 | 2009-04-16 | Hitachi Chemical Company, Ltd. | Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device |
| JP2009130333A (en) * | 2007-11-28 | 2009-06-11 | Oki Semiconductor Co Ltd | Manufacturing method of semiconductor device |
| JP4851613B2 (en) * | 2009-12-22 | 2012-01-11 | 古河電気工業株式会社 | Adhesive tape for semiconductor wafer surface protection |
| JP2011216704A (en) * | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | Adhesive tape for semiconductor wafer processing |
| WO2012014487A1 (en) | 2010-07-28 | 2012-02-02 | 三井・デュポンポリケミカル株式会社 | Laminate film, and film for use in production of semiconductor comprising same |
-
2013
- 2013-03-05 JP JP2013043566A patent/JP5480415B1/en active Active
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2014
- 2014-03-04 WO PCT/JP2014/055472 patent/WO2014136777A1/en active Application Filing
- 2014-03-04 KR KR1020147031275A patent/KR101748924B1/en active IP Right Grant
- 2014-03-04 CN CN201480001188.XA patent/CN104335329B/en active Active
- 2014-03-05 TW TW103107393A patent/TWI548717B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101748924B1 (en) | 2017-06-20 |
| CN104335329A (en) | 2015-02-04 |
| JP2014096556A (en) | 2014-05-22 |
| KR20150084654A (en) | 2015-07-22 |
| WO2014136777A1 (en) | 2014-09-12 |
| JP5480415B1 (en) | 2014-04-23 |
| TWI548717B (en) | 2016-09-11 |
| CN104335329B (en) | 2017-02-22 |
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