TW201438846A - Structure of polishing pad trimmer and manufacturing method thereof - Google Patents

Structure of polishing pad trimmer and manufacturing method thereof Download PDF

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Publication number
TW201438846A
TW201438846A TW102112375A TW102112375A TW201438846A TW 201438846 A TW201438846 A TW 201438846A TW 102112375 A TW102112375 A TW 102112375A TW 102112375 A TW102112375 A TW 102112375A TW 201438846 A TW201438846 A TW 201438846A
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protective layer
axis
sapphire wafer
polishing pad
forming step
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TW102112375A
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Chinese (zh)
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TWI546156B (en
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Wen-Yan Shen
run-wen Zhong
Kuang-Ling Wei
Zi-Xuan Dai
Quan-Lang Lv
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Tera Xtal Technology Corp
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Priority to TW102112375A priority Critical patent/TWI546156B/en
Priority to CN201310603381.8A priority patent/CN104097146B/en
Priority to US14/187,048 priority patent/US9457450B2/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention provides a structure of polishing pad trimmer structure and a manufacturing method thereof. The structure comprises a sapphire chip body with specific axis and a protective film. The upper surface of the sapphire chip body is micro-structured and the protective layer covers the upper surface of the sapphire body, in which the height error of micro-structure is less than 5% of average height. The manufacturing method includes a chip unit forming step, an image transfer step, a heat treatment step and a protective layer forming step. The chip unit forming step forms the sapphire chip with specific axis. The image transfer step forms the micro-structure with the image transfer method in semiconductor process to obtain the sapphire chip body. The heat treatment step may reduce the lattice defects. The protective layer forming step forms a protective layer on the sapphire chip body. Thus, the present invention may enhance the wearing resistance and anti-corrosion effects in the mechanical and chemical aspects.

Description

拋光墊修整器結構及其製作方法 Polishing pad dresser structure and manufacturing method thereof

本發明係涉及一種拋光墊修整器結構及其的製作方法，尤其是在具有特定軸向之藍寶石晶片上形成磨擦係數低及耐腐蝕的微結構。 The present invention relates to a polishing pad conditioner structure and a method of fabricating the same, and more particularly to forming a microstructure having a low coefficient of friction and corrosion resistance on a sapphire wafer having a specific axial direction.

隨著半導體及光電產業的蓬勃發展，在科技日新月異的進展，對元件線寬的要求逐漸變小，以及電路積體化的高度發展，整個半導體製程中，平坦化的製程日趨重要。現今以化學機械拋光法(Chemical Mechanical Polishing，CMP)最能夠滿足電子元件製程中，高度平坦化的需求。 With the rapid development of the semiconductor and optoelectronic industries, the ever-changing progress of technology, the requirements for component line widths have become smaller, and the integration of circuits has been highly developed. In the entire semiconductor process, the flattening process has become increasingly important. Today, Chemical Mechanical Polishing (CMP) is the most suitable for high level flattening in electronic component manufacturing.

在化學機械拋光法中，所使用的拋光墊表面具有孔洞及纖毛兩個結構，孔洞的目的是用以涵養拋光漿(slurry)，而纖毛用以與工件機磨擦，如此，藉由化學力與機械力的結合，去除表面不平整的部位。然而，拋光墊在拋光的過程中也會被鈍化，可能產生的現象包含孔洞被移除的顆粒(particle)或研磨粒(abrasive)填塞空隙、纖毛因長時間的摩擦有磨耗等，這都會導致拋光效率的降低。 In the chemical mechanical polishing method, the surface of the polishing pad used has two structures of pores and cilia, the purpose of the holes is to conserve a slurry, and the cilia is used to rub with the workpiece machine, thus, by chemical force and The combination of mechanical forces removes uneven areas of the surface. However, the polishing pad is also passivated during polishing, which may include phenomena in which the particles are removed by particles or abrasive filling gaps, and the cilia are worn due to prolonged friction, which may result in Reduced polishing efficiency.

為了維持一定之拋光效率，而避免製程的停止，目前採用的方式是一邊進行化學機械拋光，同時一邊使用拋光墊修整器刮除表面顆粒及刮痕整理，而使得在拋光墊的表面產生新的孔洞以含養拋光液，以及產生新的纖毛以移除材料。 In order to maintain a certain polishing efficiency and avoid the process stop, the current method is to perform chemical mechanical polishing while using a polishing pad dresser to scrape off surface particles and scratch finishing, so that a new surface is produced on the surface of the polishing pad. The holes contain a polishing fluid and new cilia to remove the material.

現今來說，拋光墊修整器的結構是以鑽石微粒硬焊於金屬盤表面，由於其鑽石裸露之高低不一、外觀形狀不一及大小不一，而使得整體鑽石微粒在修整時的利用率約只有10%左右，且由於鑽石微粒是藉由電鍍或硬焊燒結之方式與金屬盤結合，結合力與接觸面積大小及狀態呈正相關，鑽石顆粒與焊層間依舊存在介面間熱漲冷縮至鑽石脫落失效狀態，當 熱漲冷縮嚴重或是接著層之金屬遭受拋光漿的腐蝕而使得鑽石粒脫落時，可能會導致加工物之局部或大面積之刮傷與破片損失，這時產生的問題就比定期維修更為嚴重。 Nowadays, the structure of the polishing pad conditioner is that the diamond particles are hard-welded to the surface of the metal disk. Due to the different heights of the diamonds, the different shapes and the different sizes, the utilization of the whole diamond particles during the trimming process is improved. About 10% or so, and because the diamond particles are combined with the metal plate by electroplating or brazing, the bonding force is positively correlated with the size and state of the contact area, and there is still a thermal expansion between the diamond particles and the solder layer. Diamond shedding failure state, when If the heat shrinkage is severe or the metal of the adhesive layer is corroded by the polishing slurry, the diamond particles may fall off, which may cause partial or large-scale scratching and fragmentation of the processed material. The problem is more serious than regular maintenance. serious.

另外，雖然近年來已經發展出以陶瓷材料形成一體成型的拋光墊修整器，而能夠避免鑽石的脫離的問題，然而，整體的硬度仍然遠低於鑽石，且對於晶圓用的拋光液，仍然有被腐蝕的現象，因此，需要一種能夠耐機械、化學的磨損，同時面微結構高低相同、大小一致，且不易脫落的拋光墊修整器。 In addition, although in recent years, a polishing pad conditioner which is integrally formed of a ceramic material has been developed, the problem of detachment of the diamond can be avoided, however, the overall hardness is still much lower than that of the diamond, and for the polishing liquid for the wafer, There is a phenomenon of corrosion. Therefore, there is a need for a polishing pad dresser that is resistant to mechanical and chemical wear, and has the same surface microstructure and uniform size, and is not easy to fall off.

本發明的主要目的是提供一種拋光墊修整器結構，該拋光墊修整器結構包含一藍寶石晶片本體以及一保護膜，藍寶石晶片本體為具有一特定軸向，且其上表面上具有複數個微結構，而該保護層為鑽石膜或類鑽碳膜，覆蓋該藍寶石本體的上表面，其中特定軸向為a軸向、c軸向、r軸向、m軸向、n軸向以及v軸向的其中之一，且該等微結構的高度誤差小於一平均高度的5%。 SUMMARY OF THE INVENTION A primary object of the present invention is to provide a polishing pad conditioner structure comprising a sapphire wafer body and a protective film, the sapphire wafer body having a specific axial direction and having a plurality of microstructures on the upper surface thereof And the protective layer is a diamond film or a diamond-like carbon film covering the upper surface of the sapphire body, wherein the specific axial direction is a-axis, c-axis, r-axis, m-axis, n-axis, and v-axis One of them, and the height error of the microstructures is less than 5% of an average height.

進一步地，藍寶石晶片本體及保護層之間還包含一緩衝層，以增加保護層的附著力，其中該緩衝層為鈦、鉑、銅、摻雜鈦的氧化鋁、氧化鈦、氧化鋁氧化鈦混合物，以及石墨的至少其中之一。 Further, a buffer layer is further included between the sapphire wafer body and the protective layer to increase the adhesion of the protective layer, wherein the buffer layer is titanium, platinum, copper, titanium-doped alumina, titanium oxide, and aluminum oxide titanium oxide. a mixture, and at least one of graphite.

本發明的另一目的是提供一種本發明拋光墊修整器的製作方法，該方法包含晶片單元形成步驟、影像轉移步驟、熱處理步驟以及保護層形成步驟。晶片單元形成步驟是在將原料在高溫爐熔料後，在特定軸向對晶種拉晶，而形成特定軸向的晶棒，再藉由切片，得到具有特定軸向的藍寶石晶片。影像轉移步驟是在該具有特定軸向的藍寶石晶片，以半導體製程的影像轉移方式，使得在該具有特定軸向的藍寶石晶片的表面上形成複數個微結構，而形成該藍寶石晶片本體。 Another object of the present invention is to provide a method of fabricating a polishing pad conditioner of the present invention, which comprises a wafer unit forming step, an image transfer step, a heat treatment step, and a protective layer forming step. The wafer unit forming step is to crystallize the seed crystal in a specific axial direction after the raw material is melted in the high temperature furnace to form a specific axial ingot, and then to obtain a sapphire wafer having a specific axial direction by slicing. The image transfer step is to form a sapphire wafer body on the surface of the sapphire wafer having a specific axial direction by forming a plurality of microstructures on the surface of the sapphire wafer having a specific axial direction in the sapphire wafer having a specific axial direction.

熱處理步驟是將影像轉移步驟該藍寶石晶片本體，放入高溫爐中，升溫至1000℃~1800℃維持1~8小時後爐冷，而使藍寶石的晶格重整，減少晶格缺陷。保護層形成步驟是在藍寶石晶片本體上形成一保護層，而完成拋光墊修整器結構。此外，在熱處理步驟後、保護層形成步驟之前， 還可先進行一緩衝層形成步驟，在藍寶石晶片本體上先形成一緩衝層以增加保護層的附著力。 In the heat treatment step, the sapphire wafer body is placed in a high-temperature furnace, and the temperature is raised to 1000 ° C to 1800 ° C for 1 to 8 hours, and then the furnace is cooled to reform the crystal lattice of the sapphire to reduce lattice defects. The protective layer forming step is to form a protective layer on the sapphire wafer body to complete the polishing pad conditioner structure. In addition, after the heat treatment step and before the protective layer forming step, A buffer layer forming step may also be performed to form a buffer layer on the sapphire wafer body to increase the adhesion of the protective layer.

藉由以廣泛應用、技術成熟的藍寶石晶圓，以半導體的影像轉移方式在其上形成具有微結構的藍寶石晶片本體，由於藍寶石晶片本體具有特定軸向。 A sapphire wafer body having a microstructure is formed thereon by image transfer of a semiconductor by a widely used, technically mature sapphire wafer, since the sapphire wafer body has a specific axial direction.

藍寶石晶圓，且經熱處理減少晶格缺陷，並在其上形成保護層，達到微結構高度均勻、不易脫落的優點，更藉由保護層達到機械及化學的抗磨耗、抗蝕效果，而有效地解決習用技術上所面臨的問題。 Sapphire wafer, which is heat treated to reduce lattice defects and form a protective layer thereon, which has the advantages of high uniformity of microstructure and easy to fall off, and is effective by mechanical and chemical anti-wear and anti-corrosion effects of the protective layer. Solve the problems faced by the conventional technology.

1‧‧‧拋光墊修整器結構 1‧‧‧ polishing pad dresser structure

10‧‧‧藍寶石晶片 10‧‧‧Sapphire wafer

15‧‧‧微結構 15‧‧‧Microstructure

20‧‧‧保護層 20‧‧‧Protective layer

30‧‧‧緩衝層 30‧‧‧buffer layer

S1‧‧‧拋光墊修整器的製作方法 S1‧‧‧ polishing pad dresser manufacturing method

S10‧‧‧晶片單元產生步驟 S10‧‧‧ wafer unit generation steps

S20‧‧‧影像轉移步驟 S20‧‧‧Image Transfer Step

S30‧‧‧熱處理步驟 S30‧‧‧ Heat treatment steps

S40‧‧‧保護層形成步驟 S40‧‧‧Protective layer formation steps

S50‧‧‧緩衝層形成步驟 S50‧‧‧ Buffer layer formation steps

第一圖為本發明拋光墊修整器結構的剖面示意圖。 The first figure is a schematic cross-sectional view of the structure of the polishing pad conditioner of the present invention.

第二A圖至第二D圖為第一圖中藍寶石晶片本體的立體及放大剖視圖。 2A to 2D are perspective and enlarged cross-sectional views of the sapphire wafer body in the first figure.

第三圖至第六圖為本發明拋光墊修整器的製作方法的流程圖。 3 to 6 are flow charts of a method of fabricating a polishing pad conditioner of the present invention.

以下配合圖式及元件符號對本發明之實施方式做更詳細的說明，俾使熟習該項技藝者在研讀本說明書後能據以實施。 The embodiments of the present invention will be described in more detail below with reference to the drawings and the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;

參閱第一圖，本發明拋光墊修整器結構的剖面示意圖。如第一圖所示，本發明拋光墊修整器結構1包含一藍寶石晶片本體10，以及一保護層20，藍寶石晶片本體10為特定軸向的晶片，且其上表面上具有複數個微結構15，保護層20為鑽石膜或一類鑽碳(Diamond Like Carbon，DLC)膜，覆蓋該藍寶石本體10的上表面。該特定軸向可以為a軸向(包含、、、、以及)、c軸向([0001])、r-軸向(包含、、、、以及)、m-軸向(包含、、、、以及)、該v軸向()以及該n軸向()，又其中a軸向、c軸向以及m-軸向側向的耐磨度較高，而r-軸向、v軸向以及n軸向正向的耐磨度較高。 Referring to the first figure, a schematic cross-sectional view of the structure of the polishing pad conditioner of the present invention. As shown in the first figure, the polishing pad conditioner structure 1 of the present invention comprises a sapphire wafer body 10, and a protective layer 20, the sapphire wafer body 10 being a specific axial wafer having a plurality of microstructures 15 on its upper surface. The protective layer 20 is a diamond film or a diamond-like carbon (DLC) film covering the upper surface of the sapphire body 10. The specific axis can be a-axis (including , , , , as well as ), c-axis ([0001]), r-axis (including , , , , as well as ), m-axis (including , , , , as well as ), the v-axis ( And the n-axis ( In addition, the axial wear resistance of the a-axis, the c-axis, and the m-axis is higher, and the wear resistance is higher in the r-axis, the v-axis, and the n-axis.

進一步地，在藍寶石晶片本體10及一保護層20之間還包含一緩衝層30，以增加保護層20的附著力，其中該緩衝層20為鈦、鉑、銅、 摻雜鈦的氧化鋁、氧化鈦、氧化鋁氧化鈦混合物，以及石墨的至少其中之一。 Further, a buffer layer 30 is further included between the sapphire wafer body 10 and a protective layer 20 to increase the adhesion of the protective layer 20, wherein the buffer layer 20 is titanium, platinum, copper, At least one of titanium-doped alumina, titanium oxide, aluminum oxide titanium oxide, and graphite.

參閱第二A圖至第二D圖，第一圖中藍寶石晶片本體的立體及放大剖視圖。如第二A圖所示，藍寶石晶片本體10上的該等微結構15為對稱平頭錐柱；如第二B圖所示，藍寶石晶片本體10上的該等微結構15為不稱平頭錐柱；如第二C圖所示，藍寶石晶片本體10上的該等微結構15為對稱尖頭錐柱；以及；如第二D圖所示，藍寶石晶片本體10上的該等微結構15為不對稱尖頭錐柱。在此僅為示例，而不用以限定，可依實際使用形成各種微結構的形狀。而該等微結構15的高度誤差小於平均高度的5%。 Referring to Figures 2A through 2D, a perspective and enlarged cross-sectional view of the sapphire wafer body in the first figure. As shown in FIG. 2A, the microstructures 15 on the sapphire wafer body 10 are symmetric truncated cones; as shown in the second B, the microstructures 15 on the sapphire wafer body 10 are not called flat cones. As shown in FIG. 2C, the microstructures 15 on the sapphire wafer body 10 are symmetric pointed cones; and; as shown in the second D diagram, the microstructures 15 on the sapphire wafer body 10 are not Symmetrical pointed cone. This is merely an example, and is not intended to be limiting, and the shapes of various microstructures may be formed according to actual use. The height error of the microstructures 15 is less than 5% of the average height.

參閱第三圖，本發明拋光墊修整器的製作方法的流程圖。如第三圖所示，本發明拋光墊修整器的製作方法S1包含晶片單元形成步驟S10、影像轉移步驟S20、熱處理步驟S30以及保護層形成步驟S40。晶片單元形成步驟S10是在將原料在高溫爐熔料後，在特定軸向對晶種拉晶，而形成特定軸向的晶棒，再藉由切片，得到具有特定軸向的藍寶石晶片。 Referring to the third figure, a flow chart of a method of fabricating a polishing pad conditioner of the present invention. As shown in the third figure, the manufacturing method S1 of the polishing pad conditioner of the present invention includes a wafer unit forming step S10, an image transfer step S20, a heat treatment step S30, and a protective layer forming step S40. The wafer unit forming step S10 is to form a crystal rod having a specific axial direction by crystallizing the seed crystal in a specific axial direction after melting the raw material in a high temperature furnace, and then forming a sapphire wafer having a specific axial direction by slicing.

影像轉移步驟S20是在該具有特定軸向的藍寶石晶片，以半導體製程的影像轉移方式，使得在該具有特定軸向的藍寶石晶片的上表面上形成複數個微結構15，而形成該藍寶石晶片本體10，其中影像轉移步驟S20可以包含傳統的塗佈光阻、曝光、顯影、濕蝕刻、移除光阻等細部步驟，也可以將濕蝕刻、移除光阻改為乾蝕刻及光阻灰化。 The image transfer step S20 is to form a plurality of microstructures 15 on the upper surface of the sapphire wafer having a specific axial direction by forming a plurality of microstructures 15 on the upper surface of the sapphire wafer having a specific axial direction in the sapphire wafer having a specific axial direction, thereby forming the sapphire wafer body. 10, wherein the image transfer step S20 may comprise a conventional step of coating photoresist, exposure, development, wet etching, removing photoresist, etc., or wet etching, removing photoresist, dry etching and photoresist ashing .

熱處理步驟S30是將影像轉移步驟S20後的該藍寶石晶片本體10，放入一高溫爐中，升溫至1000℃~1800℃維持1~8小時後爐冷，如此，使得藍寶石的晶格重整，而減少晶格缺陷。 The heat treatment step S30 is that the sapphire wafer body 10 after the image transfer step S20 is placed in a high temperature furnace, heated to 1000 ° C to 1800 ° C for 1 to 8 hours, and then cooled, so that the crystal lattice of the sapphire is reformed. And reduce lattice defects.

保護層形成步驟S40是以濺鍍(Sputtering)、有機金屬化學汽相沈積(metalorganic chemical vapor deposition，MOCVD)、電漿化學氣相沈積(Plasma enhanced chemical vapor deposition，PECVD)、低壓化學氣相沈積(Low pressure chemical vapor deposition，LPCVD)、脈衝雷射沈積(pulsed laser deposition，PLD)，以及電弧離子蒸鍍(arc ion plating，AIP)的其中之一在藍寶石晶片本體10上形成一保護層20，而完成本發明的拋光墊修整器結構。 The protective layer forming step S40 is a sputtering process, a metalorganic chemical vapor deposition (MOCVD), a plasma enhanced chemical vapor deposition (PECVD), and a low pressure chemical vapor deposition ( One of low pressure chemical vapor deposition (LPCVD), pulsed laser deposition (PLD), and arc ion plating (AIP) forms a protective layer 20 on the sapphire wafer body 10, and The polishing pad conditioner structure of the present invention is completed.

進一步地，可以在熱處理步驟S30後，保護層形成步驟S40之前先進行一緩衝層形成步驟S50，主要是以蒸鍍、濺鍍、MOCVD、PECVD、LPCVD、PLD以及AIP的其中之一，在藍寶石晶片本體10上先形成一緩衝層30。 Further, after the heat treatment step S30, a buffer layer forming step S50 is performed before the protective layer forming step S40, mainly one of vapor deposition, sputtering, MOCVD, PECVD, LPCVD, PLD, and AIP, in the sapphire A buffer layer 30 is first formed on the wafer body 10.

更進一步地，可以如第四圖至第六圖所示，熱處理步驟S30可以在完成緩衝層形成步驟S50後進行，再執行保護層形成步驟S40，也可以在完成緩衝層形成步驟S50及保護層形成步驟S40後再進行熱處理步驟S30，更廣泛地，還可以在影像轉移步驟S20、緩衝層形成步驟S50及保護層形成步驟S40各進行一次熱處理步驟S30。 Further, as shown in the fourth to sixth figures, the heat treatment step S30 may be performed after the completion of the buffer layer forming step S50, and then the protective layer forming step S40 may be performed, or the buffer layer forming step S50 and the protective layer may be completed. After the step S40 is formed, the heat treatment step S30 is performed. Further, the heat treatment step S30 may be performed once in each of the image transfer step S20, the buffer layer forming step S50, and the protective layer forming step S40.

本發明的技術特徵主要在於，應用形成發光二極體常用的藍寶石晶圓，以半導體的影像轉移方式形成在上表面具有微結構的藍寶石晶片本體，由於藍寶石晶片本體具有特定軸向，且經過熱處理減少缺陷，並在其上形成保護層。如此，除了達到微結構的高度均勻、不易脫落，更藉由保護層達到機械及化學的抗磨耗、抗蝕效果，而有效地解決習用技術上所面臨的問題。 The technical feature of the present invention mainly lies in that a sapphire wafer commonly used for forming a light-emitting diode is formed, and a sapphire wafer body having a microstructure on an upper surface is formed by image transfer of a semiconductor, and the sapphire wafer body has a specific axial direction and is subjected to heat treatment. Reduce defects and form a protective layer on them. In this way, in addition to achieving a high degree of uniformity of the microstructure, it is not easy to fall off, and the mechanical and chemical anti-wear and anti-corrosion effects are achieved by the protective layer, thereby effectively solving the problems faced by the conventional technology.

以上所述者僅為用以解釋本發明之較佳實施例，並非企圖據以對本發明做任何形式上之限制，是以，凡有在相同之發明精神下所作有關本發明之任何修飾或變更，皆仍應包括在本發明意圖保護之範疇。 The above is only a preferred embodiment for explaining the present invention, and is not intended to limit the present invention in any way, and any modifications or alterations to the present invention made in the spirit of the same invention. All should still be included in the scope of the intention of the present invention.

1‧‧‧拋光墊修整器結構 1‧‧‧ polishing pad dresser structure

10‧‧‧藍寶石晶片 10‧‧‧Sapphire wafer

15‧‧‧微結構 15‧‧‧Microstructure

20‧‧‧保護層 20‧‧‧Protective layer

30‧‧‧緩衝層 30‧‧‧buffer layer

Claims (11)

一種拋光墊修整器結構，包含：一藍寶石晶片本體，為具有一特定軸向的晶片，且其上表面上具有複數個微結構；以及一保護層，為一鑽石膜或一類鑽碳膜，覆蓋該藍寶石本體的上表面，其中該特定軸向為a軸向、c軸向、r軸向、m軸向、n軸向以及v軸向的其中之一，且該等微結構的高度誤差小於一平均高度的5%。 A polishing pad conditioner structure comprising: a sapphire wafer body having a specific axial wafer and having a plurality of microstructures on an upper surface thereof; and a protective layer being a diamond film or a diamond-like carbon film covering An upper surface of the sapphire body, wherein the specific axial direction is one of an a-axis, a c-axis, an r-axis, an m-axis, an n-axis, and a v-axis, and the height error of the microstructures is less than An average height of 5%. 如申請專利範圍第1項所述之拋光墊修整器結構，進一步包含一緩衝層，該緩衝層設置在該藍寶石晶片本體以及該保護層之間。 The polishing pad conditioner structure of claim 1, further comprising a buffer layer disposed between the sapphire wafer body and the protective layer. 如申請專利範圍第2項所述之拋光墊修整器結構，其中該緩衝層為鈦、鉑、銅、摻雜鈦的氧化鋁、氧化鈦、氧化鋁氧化鈦混合物，以及石墨的至少其中之一。 The polishing pad conditioner structure of claim 2, wherein the buffer layer is at least one of titanium, platinum, copper, titanium-doped alumina, titanium oxide, aluminum oxide titanium oxide, and graphite. . 如申請專利範圍第1項所述之拋光墊修整器結構，其中該等微結構的外觀形狀為對稱平頭錐柱、對稱尖頭錐柱、不對稱平頭錐柱，或不對稱尖頭錐柱。 The polishing pad conditioner structure according to claim 1, wherein the microstructures have a shape of a symmetrical flat cone, a symmetric pointed cone, an asymmetric flat cone, or an asymmetric pointed cone. 一種拋光墊修整器結構的製作方法，包含：一晶片單元形成步驟，將原料在高溫爐熔料後，在特定軸向對晶種拉晶，而形成一特定軸向的一晶棒，再將該晶棒切片得到具有該特定軸向的一藍寶石晶片；一影像轉移步驟，在該藍寶石晶片的一上表面上以影像轉移的方式，形成複數個微結構，而完成一藍寶石晶片本體； 一保護層形成步驟，在該藍寶石晶片本體的該上表面上形成一保護層，而完成該拋光墊修整器結構；以及至少一熱處理步驟，將具有該寶石晶片本體放入一高溫爐中進行一熱處理，以修復晶格缺陷及/或增加保護層附著力，該至少熱處理步驟在該影像轉移步驟後，或/及保護層形成步驟後進行，其中該特定軸向為a軸向、c軸向、r軸向、m軸向、n軸向以及v軸向的其中之一，且該等微結構的高度誤差小於一平均高度的5%。 A manufacturing method of a polishing pad conditioner structure, comprising: a wafer unit forming step, after the material is melted in a high temperature furnace, the seed crystal is pulled in a specific axial direction to form a specific axial ingot, and then The ingot is sliced to obtain a sapphire wafer having the specific axial direction; an image transfer step of forming a plurality of microstructures on an upper surface of the sapphire wafer by image transfer to complete a sapphire wafer body; a protective layer forming step of forming a protective layer on the upper surface of the sapphire wafer body to complete the polishing pad conditioner structure; and at least one heat treatment step of placing the gemstone wafer body into a high temperature furnace for performing Heat treatment to repair lattice defects and/or increase adhesion of the protective layer, the at least heat treatment step being performed after the image transfer step, or/and after the protective layer forming step, wherein the specific axial direction is a-axis, c-axis One of the r-axis, the m-axis, the n-axis, and the v-axis, and the height error of the microstructures is less than 5% of an average height. 如申請專利範圍第5項所述之製作方法，其中該保護層形成步驟是以濺鍍、有機金屬化學汽相沈積、電漿化學氣相沈積、低壓化學氣相沈積、脈衝雷射沈積，以及電弧離子蒸鍍的其中之一形成該保護層於該藍寶石晶片本體的該上表面。 The manufacturing method of claim 5, wherein the protective layer forming step is sputtering, organometallic chemical vapor deposition, plasma chemical vapor deposition, low pressure chemical vapor deposition, pulsed laser deposition, and One of the arc ion evaporation forms the protective layer on the upper surface of the sapphire wafer body. 如申請專利範圍第5項所述之製作方法，其中該等微結構的外觀形狀為對稱平頭錐柱、對稱尖頭錐柱、不對稱平頭錐柱，或不對稱尖頭錐柱。 The manufacturing method of claim 5, wherein the microstructures have a shape of a symmetrical flat cone, a symmetric pointed cone, an asymmetric flat cone, or an asymmetric pointed cone. 如申請專利範圍第5項所述之製作方法，進一步在保護層形成步驟之前先進行一緩衝層形成步驟，在該藍寶石晶片本體的上表面先形成一緩衝層，其中該緩衝層是以蒸鍍、濺鍍、MOCVD、PECVD、LPCVD、PLD以及AIP的其中之一所形成。 According to the manufacturing method of claim 5, a buffer layer forming step is further performed before the protective layer forming step, and a buffer layer is formed on the upper surface of the sapphire wafer body, wherein the buffer layer is evaporated. One of sputtering, MOCVD, PECVD, LPCVD, PLD, and AIP. 如申請專利範圍第8項所述之製作方法，其中該緩衝層為鈦、鉑、銅、摻雜鈦的氧化鋁、氧化鈦、氧化鋁氧化鈦混合物，以及石墨的至少其中之一。 The production method according to claim 8, wherein the buffer layer is at least one of titanium, platinum, copper, titanium-doped alumina, titanium oxide, aluminum oxide titanium oxide mixture, and graphite. 如申請專利範圍第5項所述之製作方法，其中該熱處理步驟是將完成該 影像轉移步驟後的該藍寶石晶片，放入一高溫爐中，升溫至1000℃~1800℃維持1~8小時後爐冷。 The manufacturing method of claim 5, wherein the heat treatment step is to complete the The sapphire wafer after the image transfer step is placed in a high temperature furnace and heated to 1000 ° C to 1800 ° C for 1 to 8 hours and then cooled. 如申請專利範圍第8項所述之製作方法，進一步在該緩衝層形成步驟前或/後再進行一熱處理步驟。 According to the manufacturing method described in claim 8, the heat treatment step is further performed before or after the buffer layer forming step.
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