TW201419396A - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
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- TW201419396A TW201419396A TW102131631A TW102131631A TW201419396A TW 201419396 A TW201419396 A TW 201419396A TW 102131631 A TW102131631 A TW 102131631A TW 102131631 A TW102131631 A TW 102131631A TW 201419396 A TW201419396 A TW 201419396A
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- phosphoric acid
- substrate
- wafer
- storage tank
- aqueous solution
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- 239000000758 substrate Substances 0.000 title claims abstract description 144
- 238000012545 processing Methods 0.000 title claims abstract description 73
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 438
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 219
- 238000003860 storage Methods 0.000 claims abstract description 170
- 239000007864 aqueous solution Substances 0.000 claims abstract description 110
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 153
- 239000000243 solution Substances 0.000 claims description 52
- 239000007921 spray Substances 0.000 claims description 29
- 230000005855 radiation Effects 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 45
- 239000007788 liquid Substances 0.000 description 24
- 238000009835 boiling Methods 0.000 description 21
- 230000002093 peripheral effect Effects 0.000 description 17
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 17
- 239000008367 deionised water Substances 0.000 description 14
- 229910021641 deionized water Inorganic materials 0.000 description 14
- 230000003028 elevating effect Effects 0.000 description 13
- 230000000717 retained effect Effects 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 229910019142 PO4 Inorganic materials 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 5
- 239000010452 phosphate Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241001365789 Oenanthe crocata Species 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
本發明係關於基板處理裝置。成為處理對象的基板係包括有例如：半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、FED(Field Emission Display，場發射顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板、太陽電池用基板等。 The present invention relates to a substrate processing apparatus. The substrate to be processed includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for a disk, a substrate for a disk, and a magneto-optical substrate. A disk substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, or the like.
在半導體裝置、液晶顯示裝置等的製造步驟中，視需要施行對已形成有矽氮化膜與矽氧化膜的基板表面，供應作為蝕刻液之高溫磷酸水溶液，而選擇性去除矽氮化膜的磷酸蝕刻處理。 In the manufacturing process of a semiconductor device, a liquid crystal display device, or the like, the surface of the substrate on which the tantalum nitride film and the tantalum oxide film have been formed is applied as needed, and a high-temperature phosphoric acid aqueous solution as an etching liquid is supplied to selectively remove the tantalum nitride film. Phosphoric acid etching treatment.
在對複數片基板統括性施行處理的批次式基板處理裝置中，使複數片基板以一定時間浸漬於已儲存高溫磷酸水溶液的處理槽中。 In a batch type substrate processing apparatus that performs a processing on a plurality of substrates in total, a plurality of substrates are immersed in a treatment tank in which a high-temperature phosphoric acid aqueous solution is stored for a predetermined period of time.
[專利文獻1]日本專利特開2007-258405號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-258405
批次式基板處理裝置為能執行均勻的蝕刻處理，必需將 基板在處理槽所儲存的磷酸水溶液中浸漬一定時間以上。所以，不管統括式對複數片基板施行處理的情況、或處理一片基板的情況，均需要相同的處理時間。 The batch type substrate processing apparatus is capable of performing uniform etching processing, and it is necessary to The substrate is immersed in the aqueous phosphoric acid solution stored in the treatment tank for a certain period of time or longer. Therefore, the same processing time is required regardless of the case where the processing of the plurality of substrates is performed in a unified manner or the case of processing one substrate.
另一方面，單片式基板處理裝置係可依短時間對一片基板施行均勻處理。 On the other hand, the one-chip substrate processing apparatus can perform uniform processing on one substrate in a short time.
矽氮化膜的蝕刻速率(每單位時間的除去量)係當對基板所供應的磷酸水溶液溫度在沸點附近時呈最高。然而，單片式基板處理裝置即便將磷酸水溶液的溫度在槽內調節至沸點附近，但因為直到供應至基板為止前便會出現磷酸水溶液的溫度下降，因而導致矽氮化膜的蝕刻速率降低。所以，蝕刻所需要的時間拉長，會有產能降低的可能性，故期待蝕刻速率提升。 The etching rate (removal amount per unit time) of the cerium nitride film is highest when the temperature of the aqueous phosphoric acid solution supplied to the substrate is near the boiling point. However, the monolithic substrate processing apparatus adjusts the temperature of the phosphoric acid aqueous solution to the vicinity of the boiling point in the tank, but the temperature of the phosphoric acid aqueous solution is lowered until the supply to the substrate, and the etching rate of the tantalum nitride film is lowered. Therefore, the time required for etching is elongated, and there is a possibility that the productivity is lowered, so that the etching rate is expected to increase.
再者，磷酸蝕刻不僅要求提高矽氮化膜的蝕刻速率，亦要求提高矽氮化膜的選擇比(矽氮化膜除去量/矽氧化膜除去量)。 Further, the phosphoric acid etching not only requires an increase in the etching rate of the tantalum nitride film, but also an increase in the selection ratio of the tantalum nitride film (the amount of the germanium nitride film removed/the amount of the germanium oxide film removed).
緣是，本發明目的在於提供：可提高氮化膜之蝕刻速率，同時能提高氮化膜之選擇比的基板處理裝置。 Accordingly, an object of the present invention is to provide a substrate processing apparatus which can increase the etching rate of a nitride film while improving the selection ratio of the nitride film.
本發明所提供的基板處理裝置，係包括有：儲存槽、基板保持手段、及加熱手段；而，該儲存槽係用以儲存磷酸水溶液；該基板保持手段係在使基板浸漬於上述儲存槽內之磷酸水溶液的狀態下，將該基板保持水平姿勢；該加熱手段係具有與由上述基板保持手段所保持之基板呈對向的發熱部，且利用來自上述發熱部的熱輻射或熱傳導加熱該基板。 The substrate processing apparatus provided by the present invention includes: a storage tank, a substrate holding means, and a heating means; wherein the storage tank is for storing an aqueous phosphoric acid solution; and the substrate holding means is for immersing the substrate in the storage tank In the state of the phosphoric acid aqueous solution, the substrate is held in a horizontal posture; the heating means has a heat generating portion opposed to the substrate held by the substrate holding means, and the substrate is heated by heat radiation or heat conduction from the heat generating portion. .
根據此項構造，在儲存槽內的磷酸水溶液中浸漬基板。對呈浸漬狀態的基板利用熱傳導賦予來自發熱部的熱，同時利用熱輻 射賦予熱。另一方面，浸漬有基板的磷酸水溶液利用來自發熱部的熱而維持於沸點。 According to this configuration, the substrate is immersed in the aqueous phosphoric acid solution in the storage tank. Applying heat from the heat generating portion to the substrate in the immersed state by using heat conduction while utilizing heat radiation Shoot to give heat. On the other hand, the phosphoric acid aqueous solution impregnated with the substrate is maintained at the boiling point by heat from the heat generating portion.
此處，當基板被加熱至磷酸水溶液的沸點以上時，在基板表面與磷酸水溶液相鄰接的邊界處，出現局部性極高溫，且可實現整體的磷酸濃度維持較低狀態，能使此狀態的磷酸水溶液作用於基板表面的氮化膜。藉此，能大幅提高蝕刻速率，同時可維持較高的氮化膜選擇比。 Here, when the substrate is heated to a temperature higher than the boiling point of the phosphoric acid aqueous solution, a local extremely high temperature occurs at a boundary between the surface of the substrate and the aqueous phosphoric acid solution, and the overall phosphoric acid concentration can be maintained at a low state, and the state can be maintained. The aqueous phosphoric acid solution acts on the nitride film on the surface of the substrate. Thereby, the etching rate can be greatly increased while maintaining a high nitride film selection ratio.
再者，藉由將基板保持在水平姿勢的情況下，使該基板浸漬於儲存槽內的磷酸水溶液中，便可依較液量的磷酸水溶液實現基板浸漬。又，因為基板呈水平姿勢，因而可抑制磷酸水溶液發生對流等情況，藉此便可均勻地保持磷酸水溶液溫度與磷酸濃度。 Further, by holding the substrate in a horizontal posture, the substrate is immersed in the phosphoric acid aqueous solution in the storage tank, whereby the substrate immersion can be achieved in accordance with the liquid amount of the phosphoric acid aqueous solution. Further, since the substrate is in a horizontal posture, convection of the phosphoric acid aqueous solution or the like can be suppressed, whereby the phosphoric acid aqueous solution temperature and the phosphoric acid concentration can be uniformly maintained.
上述基板處理裝置較佳包括有：水供應手段及濃度控制手段；而，該水供應手段係對上述儲存槽所儲存的磷酸水溶液供應水；該濃度控制手段係藉由控制從上述水供應手段的水供應/停止供應，而控制儲存於上述儲存槽之磷酸水溶液的濃度。 Preferably, the substrate processing apparatus includes: a water supply means and a concentration control means; and the water supply means supplies water to the phosphoric acid aqueous solution stored in the storage tank; the concentration control means controls the water supply means from the water supply means The water supply/stop supply, and the concentration of the aqueous phosphoric acid solution stored in the above storage tank is controlled.
藉由發熱部對磷酸水溶液的加熱，磷酸水溶液維持沸騰狀態。若磷酸水溶液呈沸騰狀態，因磷酸水溶液中所含水的蒸發，會使磷酸水溶液的磷酸濃度逐漸變濃。結果，因磷酸水溶液的沸點上升，磷酸水溶液的液溫會更加上升，會有導致磷酸水溶液的磷酸濃度更加提高之可能性。 The phosphoric acid aqueous solution is maintained in a boiling state by heating the phosphoric acid aqueous solution by the heat generating portion. When the aqueous phosphoric acid solution is in a boiling state, the phosphoric acid aqueous solution has a phosphoric acid concentration which gradually becomes concentrated due to evaporation of water contained in the phosphoric acid aqueous solution. As a result, as the boiling point of the aqueous phosphoric acid solution increases, the liquid temperature of the phosphoric acid aqueous solution increases, and the phosphoric acid concentration of the phosphoric acid aqueous solution may be further increased.
根據上述構造，藉由為維持沸騰狀態的磷酸水溶液供應水，便可抑制磷酸水溶液的磷酸濃度上升。即，藉由控制磷酸水溶液的水供應/停止供應，而可控制磷酸水溶液的濃度。藉此，可將經適度濃度控制的磷酸水溶液供應至基板，故可維持更高的氮化膜選擇比。 According to the above configuration, by supplying water to the phosphoric acid aqueous solution which maintains the boiling state, it is possible to suppress an increase in the phosphoric acid concentration of the phosphoric acid aqueous solution. That is, the concentration of the aqueous phosphoric acid solution can be controlled by controlling the water supply/stop supply of the phosphoric acid aqueous solution. Thereby, an aqueous solution of phosphoric acid controlled by a moderate concentration can be supplied to the substrate, so that a higher nitride film selection ratio can be maintained.
上述水供應手段亦可包括設有吐出水液滴之多數吐出口的多孔噴嘴。因為從多數吐出口分別吐出水液滴，因而可對儲存槽所儲存的磷酸水溶液呈大致均勻地供應水。結果，可將磷酸水溶液的磷酸濃度保持均勻。藉此，可將氮化膜的選擇比在基板全域上保持均等。 The water supply means may further include a porous nozzle provided with a plurality of discharge ports for discharging water droplets. Since water droplets are ejected from a plurality of discharge ports, water can be supplied to the phosphoric acid aqueous solution stored in the storage tank substantially uniformly. As a result, the phosphoric acid concentration of the aqueous phosphoric acid solution can be kept uniform. Thereby, the selection of the nitride film can be kept uniform over the entire substrate.
再者，上述水供應手段亦可含有朝上述儲存部噴射出噴霧狀水的噴霧噴嘴。藉由噴射出噴霧狀的水，便可對儲存槽所儲存的磷酸水溶液供應更細膩的水液滴。水與磷酸水溶液因為該等的比重、黏度等不同，因而會有比較不易混合的傾向。然而，因為若液滴的大小越細膩便越容易混合，因而藉由將細膩液滴狀態的水供應至磷酸水溶液，便可使水與磷酸水溶液順暢地混合。 Further, the water supply means may further include a spray nozzle that sprays the spray water toward the storage portion. By spraying the sprayed water, it is possible to supply finer water droplets to the aqueous phosphoric acid solution stored in the storage tank. Since water and phosphoric acid aqueous solutions differ in specific gravity, viscosity, and the like, they tend to be less likely to be mixed. However, since the easier the mixing is, the easier the mixing is, the water and the aqueous phosphoric acid solution can be smoothly mixed by supplying water in a fine droplet state to the aqueous phosphoric acid solution.
本發明一實施形態中，上述加熱手段係從下方側加熱由上述基板保持手段所保持的基板。 In one embodiment of the present invention, the heating means heats the substrate held by the substrate holding means from the lower side.
此情況，上述儲存槽亦可構成具有底面，並由上述儲存槽的上述底面構成上述發熱部。因為儲存槽的底面係屬於發熱部，因而可對在儲存槽內的磷酸水溶液中所浸漬之基板，依簡單構造從發熱部利用熱輻射或熱傳導賦予熱。 In this case, the storage tank may have a bottom surface, and the heat generating portion may be formed by the bottom surface of the storage tank. Since the bottom surface of the storage tank belongs to the heat generating portion, it is possible to impart heat to the substrate immersed in the phosphoric acid aqueous solution in the storage tank by heat radiation or heat conduction from the heat generating portion in a simple configuration.
本發明另一實施形態中，上述加熱手段係從上方側加熱由上述基板保持手段所保持的基板。上述加熱手段亦可具有紅外線燈，而上述紅外線燈係與由上述基板保持手段所保持的基板表面呈對向配置，並朝該表面照射紅外線。 In another embodiment of the present invention, the heating means heats the substrate held by the substrate holding means from the upper side. The heating means may further include an infrared lamp, and the infrared lamp is disposed to face the surface of the substrate held by the substrate holding means, and irradiates the surface with infrared rays.
上述基板保持手段係設有依對上述儲存槽呈非接觸狀態支撐基板的基板支撐部；且上述基板處理裝置亦可更進一步包括有使由上述基板支撐部所支撐的基板旋轉之基板旋轉手段。 The substrate holding means is provided with a substrate supporting portion for supporting the substrate in a non-contact state with respect to the storage tank; and the substrate processing apparatus may further include a substrate rotating means for rotating the substrate supported by the substrate supporting portion.
根據此項構造，可對基板施行旋轉處理(例如旋轉乾燥)。 According to this configuration, the substrate can be subjected to a rotation process (for example, spin drying).
本發明的前述、或其他目的、特徵及效果，參照所附圖式，利用下述實施形態的說明便可清楚明瞭。 The above and other objects, features and advantages of the present invention will become apparent from
1‧‧‧基板處理裝置 1‧‧‧Substrate processing unit
2‧‧‧處理室 2‧‧‧Processing room
3‧‧‧旋轉夾具 3‧‧‧Rotary fixture
4‧‧‧儲存槽 4‧‧‧ storage tank
5‧‧‧磷酸水溶液噴嘴 5‧‧‧Aqueous phosphoric acid nozzle
8‧‧‧杯體 8‧‧‧ cup body
11‧‧‧旋轉軸 11‧‧‧Rotary axis
12‧‧‧旋轉基座 12‧‧‧Spinning base
13‧‧‧夾持構件 13‧‧‧Clamping members
14‧‧‧旋轉馬達 14‧‧‧Rotary motor
16‧‧‧磷酸供應管 16‧‧‧phosphoric acid supply tube
17‧‧‧磷酸閥 17‧‧‧Phosphate valve
24‧‧‧貫穿孔 24‧‧‧through holes
25‧‧‧支撐桿 25‧‧‧Support rod
27‧‧‧升降機構 27‧‧‧ Lifting mechanism
28‧‧‧加熱器 28‧‧‧heater
29‧‧‧底面 29‧‧‧ bottom
30‧‧‧水噴嘴 30‧‧‧Water nozzle
31‧‧‧第2水供應管 31‧‧‧2nd water supply pipe
32‧‧‧第2水閥 32‧‧‧2nd water valve
33‧‧‧鉛直杆 33‧‧‧Lead straight
34‧‧‧夾持銷 34‧‧‧Clamp pin
37‧‧‧環狀溝 37‧‧‧ annular groove
38‧‧‧外周壁(紅外線燈) 38‧‧‧peripheral wall (infrared light)
40‧‧‧控制部 40‧‧‧Control Department
41‧‧‧儲存溝 41‧‧‧ Storage ditch
42‧‧‧支撐臂 42‧‧‧Support arm
43‧‧‧夾持銷驅動機構 43‧‧‧Clamping pin drive mechanism
50‧‧‧多道噴嘴 50‧‧‧Multiple nozzles
51‧‧‧噴嘴配管 51‧‧‧Nozzle piping
52‧‧‧吐出口 52‧‧‧Exporting
53‧‧‧第1水供應管 53‧‧‧1st water supply pipe
54‧‧‧第1水閥 54‧‧‧1st water valve
61‧‧‧水供應路 61‧‧‧Water supply road
62‧‧‧下吐出口 62‧‧‧Under the spit
63‧‧‧水下供應管 63‧‧‧Underwater supply pipe
64‧‧‧水下閥 64‧‧‧Underwater valve
101‧‧‧基板處理裝置 101‧‧‧Substrate processing unit
102‧‧‧噴霧噴嘴 102‧‧‧ spray nozzle
103‧‧‧第3水供應管 103‧‧‧3rd water supply pipe
104‧‧‧第3水閥 104‧‧‧3rd water valve
201‧‧‧基板處理裝置 201‧‧‧Substrate processing device
203‧‧‧加熱器頭 203‧‧‧heater head
204‧‧‧儲存槽 204‧‧‧ Storage tank
205‧‧‧支架 205‧‧‧ bracket
206‧‧‧加熱器升降機構 206‧‧‧heater lifting mechanism
208‧‧‧加熱器 208‧‧‧heater
209‧‧‧下面 209‧‧‧ below
301‧‧‧基板處理裝置 301‧‧‧Substrate processing device
303‧‧‧紅外線加熱器 303‧‧‧Infrared heater
304‧‧‧紅外線燈 304‧‧‧Infrared light
304A‧‧‧紅外線照射面 304A‧‧‧Infrared illuminated surface
306‧‧‧加熱器搖擺機構 306‧‧‧Heater swing mechanism
401‧‧‧基板處理裝置 401‧‧‧Substrate processing device
402‧‧‧基板保持台 402‧‧‧Substrate holder
403‧‧‧升降銷 403‧‧‧lifting pin
403A‧‧‧升降銷 403A‧‧‧lifting pin
404‧‧‧儲存槽 404‧‧‧ storage tank
405‧‧‧儲存溝 405‧‧‧ Storage ditch
406‧‧‧加熱器 406‧‧‧heater
408‧‧‧外周壁 408‧‧‧ peripheral wall
409‧‧‧底面 409‧‧‧ bottom
409A‧‧‧底面部 409A‧‧‧ bottom part
410‧‧‧支撐構件 410‧‧‧Support members
411‧‧‧升降銷升降機構 411‧‧‧ Lifting pin lifting mechanism
412‧‧‧貫通孔 412‧‧‧through holes
420‧‧‧密封部 420‧‧‧ Sealing Department
421‧‧‧推拔面 421‧‧‧ pushed face
A1‧‧‧旋轉軸線 A1‧‧‧Rotation axis
W‧‧‧晶圓 W‧‧‧ wafer
W1‧‧‧間隔 W1‧‧‧ interval
圖1係本發明第1實施形態的基板處理裝置構造之示意剖視圖。 Fig. 1 is a schematic cross-sectional view showing the structure of a substrate processing apparatus according to a first embodiment of the present invention.
圖2係圖1所示基板處理裝置的電氣式構造方塊圖。 Fig. 2 is a block diagram showing the electrical construction of the substrate processing apparatus shown in Fig. 1.
圖3係利用圖1所示基板處理裝置所執行的磷酸蝕刻處理之處理例說明步驟圖。 Fig. 3 is a flow chart showing the processing example of the phosphoric acid etching process performed by the substrate processing apparatus shown in Fig. 1.
圖4A及4B係圖3的處理例說明示意圖。 4A and 4B are schematic views showing the processing example of Fig. 3.
圖4C及4D係圖4B後續步驟的說明示意圖。 4C and 4D are schematic illustrations of the subsequent steps of FIG. 4B.
圖4E及4F係圖4D後續步驟的說明示意圖。 4E and 4F are schematic illustrations of the subsequent steps of FIG. 4D.
圖5係從儲存槽底面進行的晶圓加熱之圖。 Figure 5 is a diagram of wafer heating from the bottom surface of the storage tank.
圖6係磷酸水溶液的磷酸濃度、與磷酸水溶液的沸點間之關係圖表。 Fig. 6 is a graph showing the relationship between the phosphoric acid concentration of the phosphoric acid aqueous solution and the boiling point of the phosphoric acid aqueous solution.
圖7係磷酸水溶液的磷酸濃度及磷酸水溶液溫度、與矽氮化膜的蝕刻速率間之關係圖表。 Fig. 7 is a graph showing the relationship between the phosphoric acid concentration of the phosphoric acid aqueous solution and the phosphoric acid aqueous solution temperature and the etching rate of the cerium nitride film.
圖8係本發明第2實施形態的基板處理裝置之構造示意圖。 Fig. 8 is a schematic structural view of a substrate processing apparatus according to a second embodiment of the present invention.
圖9係本發明第3實施形態的基板處理裝置之構造示意圖。 Fig. 9 is a view showing the configuration of a substrate processing apparatus according to a third embodiment of the present invention.
圖10係本發明第4實施形態的基板處理裝置之構造示意圖。 Fig. 10 is a view showing the configuration of a substrate processing apparatus according to a fourth embodiment of the present invention.
圖11係本發明第5實施形態的基板處理裝置之構造示意圖。 Fig. 11 is a view showing the configuration of a substrate processing apparatus according to a fifth embodiment of the present invention.
圖1係表示本發明第1實施形態的基板處理裝置1之構造示意剖視圖。 Fig. 1 is a schematic cross-sectional view showing the structure of a substrate processing apparatus 1 according to a first embodiment of the present invention.
該基板處理裝置1係供用以對基板一例的圓形半導體晶圓W(以下簡稱「晶圓W」)的裝置形成區域側之表面，施行矽氧化膜(氧化膜)及矽氮化膜(氮化膜)之蝕刻處理用的單片型裝置。該蝕刻處理係從晶圓W的表面選擇性蝕刻氮化膜的處理，蝕刻液係使用磷酸水溶液。 The substrate processing apparatus 1 is provided with a tantalum oxide film (oxide film) and a tantalum nitride film (nitrogen) for the surface on the device formation region side of a circular semiconductor wafer W (hereinafter referred to as "wafer W") which is an example of a substrate. A monolithic device for etching treatment of a film). This etching treatment is a process of selectively etching a nitride film from the surface of the wafer W, and an etching solution is an aqueous phosphoric acid solution.
如圖1所示，基板處理裝置1係具備有：儲存槽(加熱手段)4與旋轉夾具3。該儲存槽4係在由隔間壁(未圖示)所劃分的處理室2內以儲存磷酸水溶液。該旋轉夾具3係在儲存槽4內浸漬磷酸水溶液的狀態，水平保持晶圓W並使之旋轉。儲存槽4係有埋設加熱器28，儲存槽4的底面29具有作為用以加熱晶圓W的發熱部之機能。又，基板處理裝置1係具備有：磷酸水溶液噴嘴5、多道噴嘴(多孔噴嘴)50、水噴嘴30、及杯體8。該磷酸水溶液噴嘴5係用以對由旋轉夾具3所保持之晶圓W的表面(上面)吐出磷酸水溶液。該多道噴嘴50係用以在由旋轉夾具3所保持之晶圓W的表面滴下水液滴。該水噴嘴30係用以對由旋轉夾具3所保持之晶圓W的表面上吐出水。該杯體8係用以收容旋轉夾具3。 As shown in FIG. 1, the substrate processing apparatus 1 is equipped with a storage tank (heating means) 4 and a rotating jig 3. The storage tank 4 is housed in a processing chamber 2 partitioned by a partition wall (not shown) to store an aqueous phosphoric acid solution. The rotating jig 3 is in a state in which the phosphoric acid aqueous solution is immersed in the storage tank 4, and the wafer W is horizontally held and rotated. The storage tank 4 is provided with a buried heater 28, and the bottom surface 29 of the storage tank 4 has a function as a heat generating portion for heating the wafer W. Further, the substrate processing apparatus 1 includes a phosphoric acid aqueous solution nozzle 5, a multi-channel nozzle (porous nozzle) 50, a water nozzle 30, and a cup body 8. The phosphoric acid aqueous solution nozzle 5 is for discharging an aqueous phosphoric acid solution on the surface (upper surface) of the wafer W held by the rotary jig 3. The multi-channel nozzle 50 is used to drop water droplets on the surface of the wafer W held by the rotating jig 3. The water nozzle 30 is for discharging water onto the surface of the wafer W held by the rotating jig 3. The cup 8 is for accommodating the rotating jig 3.
旋轉夾具3係採用例如夾持式者。旋轉夾具3係具備有：朝鉛直延伸的筒狀旋轉軸11、在旋轉軸11的上端呈水平姿勢安裝的圓板狀旋轉基座12、在旋轉基座12上依例如等間隔配置的複數個(至少3個。例如6個)夾持構件(基板支撐部)13、以及連結於旋轉軸11的旋轉馬達(基板旋轉手段)14。 The rotating jig 3 is, for example, a clamp type. The rotary jig 3 includes a cylindrical rotating shaft 11 that extends vertically, a disk-shaped rotating base 12 that is horizontally attached to the upper end of the rotating shaft 11, and a plurality of the rotating bases 12 that are arranged at equal intervals, for example. (at least three, for example, six) sandwiching members (substrate supporting portions) 13 and a rotating motor (substrate rotating means) 14 coupled to the rotating shaft 11.
各夾持構件13係在側面觀呈L形的支撐臂42之前端，朝下配設用以夾持晶圓W周緣部用之夾持銷34而構成。 Each of the holding members 13 is formed at a front end of the support arm 42 which is L-shaped on the side, and a clamp pin 34 for sandwiching the peripheral portion of the wafer W is disposed downward.
複數夾持銷34結合著夾持銷驅動機構43。夾持銷驅動 機構43係形成能將複數夾持銷34引導至抵接晶圓W端面並能夾持晶圓W的夾持位置、以及較該夾持位置更靠晶圓W的徑向外邊的開放位置狀態。旋轉夾具3係藉由使各夾持銷34接觸於晶圓W的周端面並夾持，藉此使晶圓W由旋轉夾具3牢固地保持。在晶圓W被複數個夾持構件13保持的狀態下，藉由旋轉馬達14的旋轉驅動力輸入至旋轉軸11，使晶圓W圍繞著通過晶圓W中心的鉛直旋轉軸線A1進行旋轉。旋轉夾具3係可使晶圓W依最大2500rpm的旋轉速度進行旋轉。 The plurality of clamping pins 34 incorporate the clamping pin drive mechanism 43. Clamp pin drive The mechanism 43 forms an open position state capable of guiding the plurality of pin 34 to the end face of the wafer W and capable of holding the wafer W, and the radially outer side of the wafer W. . The rotating jig 3 is held by the rotating jig 3 by bringing the respective holding pins 34 into contact with the circumferential end faces of the wafer W and sandwiching them. In a state where the wafer W is held by the plurality of holding members 13, the rotational driving force of the rotary motor 14 is input to the rotating shaft 11, and the wafer W is rotated around the vertical rotation axis A1 passing through the center of the wafer W. The rotating jig 3 allows the wafer W to be rotated at a rotational speed of up to 2,500 rpm.
磷酸水溶液噴嘴5係例如依連續流狀態吐出磷酸水溶液的直線型噴嘴，在旋轉夾具3的上方且吐出口朝向晶圓W旋轉中心附近呈固定配置。磷酸水溶液噴嘴5連接著從磷酸水溶液供應源供應接近沸點(例如約140℃)之磷酸水溶液的磷酸供應管16。在磷酸供應管16中介設有用以開閉磷酸供應管16的磷酸閥17。若磷酸閥17被開啟，則從磷酸供應管16朝磷酸水溶液噴嘴5供應磷酸水溶液，又，若磷酸閥17被關閉，則停止從磷酸供應管16朝磷酸水溶液噴嘴5的磷酸水溶液供應。 The phosphoric acid aqueous solution nozzle 5 is, for example, a linear nozzle that discharges a phosphoric acid aqueous solution in a continuous flow state, and is disposed above the rotating jig 3 with the discharge port facing the center of rotation of the wafer W. The phosphoric acid aqueous solution nozzle 5 is connected to a phosphoric acid supply pipe 16 which supplies an aqueous phosphoric acid solution having a boiling point (for example, about 140 ° C) from a supply of phosphoric acid aqueous solution. A phosphoric acid valve 17 for opening and closing the phosphoric acid supply pipe 16 is interposed in the phosphoric acid supply pipe 16. When the phosphoric acid valve 17 is opened, the phosphoric acid aqueous solution is supplied from the phosphoric acid supply pipe 16 to the phosphoric acid aqueous solution nozzle 5, and when the phosphoric acid valve 17 is closed, the supply of the phosphoric acid aqueous solution from the phosphoric acid supply pipe 16 to the phosphoric acid aqueous solution nozzle 5 is stopped.
多道噴嘴50係呈直線狀延伸的噴嘴，在旋轉夾具3的上方保持水平姿勢。多道噴嘴50係沿由旋轉夾具3所保持之晶圓W的半徑方向延伸，且通過該晶圓W的旋轉軸線A1上。多道噴嘴50係具有前端被封閉的圓筒狀噴嘴配管51。多道噴嘴50的前端被封閉。 The multi-channel nozzle 50 is a nozzle that extends linearly and maintains a horizontal posture above the rotating jig 3 . The multi-channel nozzle 50 extends in the radial direction of the wafer W held by the rotating jig 3 and passes through the rotation axis A1 of the wafer W. The multi-channel nozzle 50 has a cylindrical nozzle pipe 51 whose front end is closed. The front end of the multi-channel nozzle 50 is closed.
在噴嘴配管51的周面下端緣，呈一排或複數排排列形成用以滴下水液滴的多數吐出口52。各吐出口52係由在噴嘴配管51的管壁上開設的小孔構成，各吐出口52係與噴嘴配管51的內部空間相連通。該等複數吐出口52具有大致相同的大小，並依大致等密度配置。 At the lower end edge of the circumferential surface of the nozzle pipe 51, a plurality of discharge ports 52 for dropping water droplets are formed in a row or in a plurality of rows. Each of the discharge ports 52 is formed by a small hole formed in the pipe wall of the nozzle pipe 51, and each of the discharge ports 52 communicates with the internal space of the nozzle pipe 51. The plurality of discharge ports 52 have substantially the same size and are arranged at substantially equal density.
在噴嘴配管51的基端連接著供應來自水供應源之水的第1水供應管53。噴嘴配管51的內部係與第1水供應管53的內部相連通。在第1水供應管53中介設用以關閉第1水供應管53的第1水閥54。若第1水閥54被開啟，則從第1水供應管53朝多道噴嘴50供應水，再從各吐出口52朝下方吐出水。因為各吐出口係由小孔形成，因而從各吐出口52形成液滴後再滴下。此時，從各吐出口52的水吐出流量係呈均勻。從各吐出口52滴下的水下降注入至旋轉夾具3的儲存槽4中。 A first water supply pipe 53 that supplies water from a water supply source is connected to the base end of the nozzle pipe 51. The inside of the nozzle pipe 51 is in communication with the inside of the first water supply pipe 53. A first water valve 54 for closing the first water supply pipe 53 is interposed in the first water supply pipe 53. When the first water valve 54 is opened, water is supplied from the first water supply pipe 53 to the multi-channel nozzle 50, and water is discharged downward from each of the discharge ports 52. Since each of the discharge ports is formed by small holes, droplets are formed from the respective discharge ports 52 and then dripped. At this time, the water discharge flow rate from each of the discharge ports 52 is uniform. The water dropped from each of the discharge ports 52 is dropped into the storage tank 4 of the rotary jig 3.
水噴嘴30係例如依連續流狀態吐出清洗用DIW的直線型噴嘴，在旋轉夾具3的上方、且吐出口朝向晶圓W旋轉中心附近呈固定配置。水噴嘴30連接著供應來自水供應源之水的第2水供應管31。在第2水供應管31的途中部，介設有用以切換從水噴嘴30的水供應/停止供應之第2水閥32。 The water nozzle 30 is, for example, a linear nozzle that discharges the cleaning DIW in a continuous flow state, and is disposed above the rotating jig 3 and with the discharge port being disposed toward the vicinity of the rotation center of the wafer W. The water nozzle 30 is connected to a second water supply pipe 31 that supplies water from a water supply source. In the middle of the second water supply pipe 31, a second water valve 32 for switching the supply/stop of supply of water from the water nozzle 30 is interposed.
杯體8係供經對晶圓W處理使用後的磷酸水溶液與水施行處理使用，形成有底圓筒容器狀。 The cup body 8 is used for the treatment of the phosphoric acid aqueous solution and water after the wafer W is used to form a bottomed cylindrical container.
儲存槽4係形成例如略圓筒有底容器狀，使用陶瓷、碳化矽(SiC)形成。儲存槽4係在旋轉基座12的上面、與由旋轉夾具3所保持晶圓W的下面之間呈水平姿勢配置。儲存槽4係具備有：水平平坦的圓形底面(發熱部)29、與從底面29周緣部朝鉛直上方立起的外周壁38。利用儲存槽4的底面29與外周壁38的內周面，劃分出用以在底面29上方滯留液體的淺溝渠儲存溝41，以形成可將液體滯留於底面29上方的狀態。儲存溝41的溝深度(在儲存溝41中滯留的液體厚度)係在2mm~11mm範圍內設定為例如約7mm。在儲存槽4的底面29內部埋設有電阻式加熱器28。 The storage tank 4 is formed, for example, in a slightly cylindrical bottomed container shape, and is formed using ceramic or tantalum carbide (SiC). The storage tank 4 is disposed in a horizontal posture between the upper surface of the spin base 12 and the lower surface of the wafer W held by the rotating jig 3. The storage tank 4 includes a circular bottom surface (heat generating portion) 29 that is horizontally flat, and an outer peripheral wall 38 that rises vertically upward from the peripheral edge portion of the bottom surface 29. The shallow trench storage groove 41 for retaining liquid above the bottom surface 29 is defined by the bottom surface 29 of the storage tank 4 and the inner circumferential surface of the outer peripheral wall 38 to form a state in which liquid can be retained above the bottom surface 29. The groove depth of the storage groove 41 (the thickness of the liquid retained in the storage groove 41) is set to, for example, about 7 mm in the range of 2 mm to 11 mm. A resistance heater 28 is embedded in the bottom surface 29 of the storage tank 4.
經由插通下述貫穿孔24等的供電線(未圖示)而執行對加熱器28的供電。儲存槽4並非可旋轉的構造，所以不需要為對加熱器28供電用的旋轉電氣接點。故，相較於使儲存槽4旋轉的情況，對儲存槽4的供電量不會受限制。藉此，可將晶圓W加熱至所需高溫。 Power supply to the heater 28 is performed via a power supply line (not shown) through which the through hole 24 and the like described below are inserted. The storage tank 4 is not a rotatable structure, so there is no need for a rotating electrical contact for powering the heater 28. Therefore, the amount of power supplied to the storage tank 4 is not limited as compared with the case where the storage tank 4 is rotated. Thereby, the wafer W can be heated to a desired high temperature.
在加熱器28呈開啟狀態下，藉由對加熱器28的供電，該加熱器28便會發熱，而使儲存槽4全體呈發熱狀態，底面29全域發熱。加熱器28呈開啟狀態下底面29每單位面積發熱量係底面29全域呈均勻設定。 When the heater 28 is turned on, the heater 28 generates heat by supplying power to the heater 28, and the entire storage tank 4 is heated, and the bottom surface 29 is heated throughout. When the heater 28 is in the open state, the heat generated by the bottom surface 29 per unit area is uniformly set throughout the entire surface 29 of the bottom surface.
支撐桿25係沿旋轉軸線A1朝鉛直方向(旋轉基座12的厚度方向)，插通於朝上下方向貫通旋轉基座12及旋轉軸11的貫穿孔24中，且其上端固定於儲存槽4。支撐桿25在貫穿孔24中並未接觸到旋轉基座12或旋轉軸11。支撐桿25的下端(另一端)係固定於旋轉夾具3下方的周邊構件，藉此使支撐桿25保持姿勢。依此，因為儲存槽4並非由旋轉夾具3支撐，因而即便晶圓W旋轉中，儲存槽4仍不會旋轉而呈靜止(非旋轉狀態)。 The support rod 25 is inserted in the vertical direction (the thickness direction of the rotary base 12) along the rotation axis A1, and is inserted into the through hole 24 that penetrates the rotary base 12 and the rotary shaft 11 in the vertical direction, and the upper end thereof is fixed to the storage tank 4 . The support rod 25 does not contact the spin base 12 or the rotary shaft 11 in the through hole 24. The lower end (the other end) of the support rod 25 is fixed to the peripheral member below the rotating jig 3, thereby holding the support rod 25 in a posture. Accordingly, since the storage tank 4 is not supported by the rotating jig 3, even if the wafer W is rotated, the storage tank 4 does not rotate and is stationary (non-rotating state).
支撐桿25係呈中空軸，在內部形成用以使DIW(去離子水)等水流通的水供應路61。水供應路61係連通於在儲存槽4的底面29開設的下吐出口62。下吐出口62係與由旋轉夾具3所保持之晶圓W的下面中心呈對向。 The support rod 25 is a hollow shaft, and a water supply path 61 for allowing water such as DIW (deionized water) to flow is formed inside. The water supply path 61 is connected to the lower discharge port 62 opened in the bottom surface 29 of the storage tank 4. The lower discharge port 62 is opposed to the lower center of the wafer W held by the rotating jig 3.
水供應路61連接有從水供應源供應水的水下供應管63。在水下供應管63中介設用以開閉該水下供應管63用的水下閥64。若水下閥64被開啟，則從水下供應管63經由水供應路61朝下吐出口62供應水。藉此從下吐出口62吐出水。 The water supply path 61 is connected to an underwater supply pipe 63 that supplies water from a water supply source. The underwater supply pipe 63 is provided with an underwater valve 64 for opening and closing the underwater supply pipe 63. When the underwater valve 64 is opened, water is supplied from the underwater supply pipe 63 to the lower discharge port 62 via the water supply path 61. Thereby, water is discharged from the lower discharge port 62.
支撐桿25接合於為使儲存槽4升降用的升降機構27。 儲存槽4係在利用升降機構27維持水平姿勢的狀態下進行升降。升降機構27係由例如滾珠螺桿、馬達等構成。藉由驅動升降機構27，儲存槽4便在其下面接近旋轉基座12上面的下位置(遠離晶圓W的遠離位置。參照圖4A等)、與儲存槽4上面依微小間隔W1隔開對向配置於晶圓W下面的上位置(接近晶圓W的接近位置。參照圖4D等)之間進行升降。依此，藉由便可變更儲存槽4與晶圓W間之間隔。 The support rod 25 is joined to the elevating mechanism 27 for lifting and lowering the storage tank 4. The storage tank 4 is raised and lowered in a state where the horizontal position is maintained by the elevating mechanism 27. The elevating mechanism 27 is constituted by, for example, a ball screw, a motor, or the like. By driving the elevating mechanism 27, the storage tank 4 is adjacent to the lower position on the lower surface of the rotating base 12 (away from the far position of the wafer W. See FIG. 4A, etc.), and is spaced apart from the upper surface of the storage tank 4 by a minute interval W1. The upper and lower positions (close to the vicinity of the wafer W, see FIG. 4D, etc.) disposed on the lower surface of the wafer W are lifted and lowered. Accordingly, the interval between the storage tank 4 and the wafer W can be changed.
在儲存槽4底面29的周緣部，形成有當儲存槽4位於如下述之上位置時，用以收容夾持構件13之夾持銷34的環狀溝37。環狀溝37係依在旋轉夾具3(旋轉基座12)旋轉中能收容夾持構件13之夾持銷34的方式，形成以旋轉軸線A1為中心的圓環狀。環狀溝37的溝深度係設定為當儲存槽4位於如下述上位置時，不會使夾持銷34與環狀溝37底壁相干擾程度的深度。又，環狀溝37的溝寬係設定為較寬於夾持銷34的外徑。又，圖1中，環狀溝37與外周壁38係設計呈內外相鄰接狀態。即，環狀溝37的外周面與外周壁38的內周面呈連續狀態，並構成鉛直面。 An annular groove 37 for accommodating the clamp pin 34 of the clamp member 13 when the storage tank 4 is at the upper position as described below is formed in the peripheral portion of the bottom surface 29 of the storage tank 4. The annular groove 37 is formed in an annular shape centering on the rotation axis A1 so as to accommodate the clamp pin 34 of the clamp member 13 during the rotation of the rotary jig 3 (the rotary base 12). The groove depth of the annular groove 37 is set to a depth that does not interfere with the bottom wall of the annular groove 37 when the storage groove 4 is at the upper position as described below. Further, the groove width of the annular groove 37 is set to be wider than the outer diameter of the clamp pin 34. Further, in Fig. 1, the annular groove 37 and the outer peripheral wall 38 are designed to be in an inner and outer adjacent state. That is, the outer circumferential surface of the annular groove 37 and the inner circumferential surface of the outer circumferential wall 38 are continuous, and constitute a vertical surface.
在儲存槽4位於上位置、且儲存溝41中充滿液體的狀態下，便利用儲存溝41中所滯留的液體，依表面朝上狀態浸漬由夾持構件13所夾持之晶圓W。即，儲存溝41中所滯留液體的液面係位於較晶圓W表面更靠上方，結果利用儲存溝41中所滯留液體覆蓋晶圓W表面全域。 In a state where the storage tank 4 is at the upper position and the storage tank 41 is filled with the liquid, the liquid W retained in the storage groove 41 is facilitated, and the wafer W sandwiched by the sandwiching member 13 is immersed in a surface-up state. That is, the liquid level of the liquid retained in the storage groove 41 is located above the surface of the wafer W, and as a result, the entire surface of the wafer W is covered by the liquid retained in the storage groove 41.
圖2所示係基板處理裝置1的電氣式構造方塊圖。 Fig. 2 is a block diagram showing the electrical configuration of the substrate processing apparatus 1.
基板處理裝置1係具備有含微電腦構成的控制部(溫度控制手段)40。控制部40係藉由切換朝加熱器28的通電/切斷，而控制加熱器28的開啟/關閉。又，控制部40係控制旋轉馬達14、夾持銷驅 動機構43、升降機構27等的動作。又，控制部40係控制磷酸閥17、第1水閥54、第2水閥32等的開閉動作。 The substrate processing apparatus 1 is provided with a control unit (temperature control means) 40 including a microcomputer. The control unit 40 controls the opening/closing of the heater 28 by switching the energization/cutoff to the heater 28. Moreover, the control unit 40 controls the rotary motor 14 and the pin drive The operation of the moving mechanism 43, the lifting mechanism 27, and the like. Moreover, the control unit 40 controls the opening and closing operations of the phosphate valve 17, the first water valve 54, and the second water valve 32.
圖3所示係相關利用基板處理裝置1所執行的磷酸蝕刻處理的處理例說明步驟圖。圖4A~圖4F所示係相關該處理例的說明示意圖。 FIG. 3 is a step-by-step explanatory diagram showing a processing example of the phosphoric acid etching process performed by the substrate processing apparatus 1. 4A to 4F are explanatory diagrams related to the processing example.
以下參照圖1~圖4F，對磷酸蝕刻處理的處理例進行說明。 Hereinafter, a treatment example of the phosphoric acid etching treatment will be described with reference to FIGS. 1 to 4F.
如圖4A所示，在晶圓W搬入之前，控制部40先將加熱器28呈開啟(驅動狀態)。在加熱器28呈開啟狀態下，底面29處於發熱狀態。又，控制部40開啟磷酸閥17，從磷酸水溶液噴嘴5吐出接近沸點的高溫磷酸水溶液，並將該磷酸水溶液滯留於位於下位置的儲存槽4之儲存溝41中。若磷酸水溶液充滿儲存溝41，控制部40便關閉磷酸閥17。利用呈發熱狀態的底面29，磷酸水溶液便被加熱，使磷酸水溶液升溫至沸點(例如約140℃)，然後維持沸騰狀態。藉由維持加熱狀態，磷酸水溶液中所含的水便蒸發，使磷酸水溶液的磷酸濃度逐漸變濃。 As shown in FIG. 4A, before the wafer W is carried in, the control unit 40 first turns on the heater 28 (driving state). When the heater 28 is in the open state, the bottom surface 29 is in a heat generating state. Moreover, the control unit 40 opens the phosphoric acid valve 17, and discharges a high-temperature phosphoric acid aqueous solution close to the boiling point from the phosphoric acid aqueous solution nozzle 5, and retains the aqueous phosphoric acid solution in the storage tank 41 of the storage tank 4 located at the lower position. When the phosphoric acid aqueous solution fills the storage tank 41, the control unit 40 closes the phosphate valve 17. The phosphoric acid aqueous solution is heated by the bottom surface 29 in a heated state, and the phosphoric acid aqueous solution is heated to a boiling point (for example, about 140 ° C), and then maintained in a boiling state. By maintaining the heated state, the water contained in the aqueous phosphoric acid is evaporated, and the phosphoric acid concentration of the phosphoric acid aqueous solution is gradually increased.
接著，如圖4B所示，控制部40係開啟第1水閥54，從多道噴嘴50的各吐出口52滴下水的液滴。從各吐出口52滴下的液滴會供應給儲存槽4內的磷酸水溶液。因為從多數吐出口52分別吐出水的液滴，因而對儲存槽4中所儲存的磷酸水溶液便呈大致均勻供應水。藉由朝呈沸騰狀態的磷酸水溶液供應水，便抑制儲存槽4內的磷酸水溶液之磷酸濃度上升。朝磷酸水溶液的水供應係在晶圓W搬入之前便實施。 Next, as shown in FIG. 4B, the control unit 40 opens the first water valve 54, and drops droplets of water from the respective discharge ports 52 of the multi-nozzle 50. The droplets dropped from the respective discharge ports 52 are supplied to the aqueous phosphoric acid solution in the storage tank 4. Since the droplets of water are discharged from the plurality of discharge ports 52, the aqueous phosphoric acid solution stored in the storage tank 4 is supplied substantially uniformly. By supplying water to the aqueous phosphoric acid solution in a boiling state, the phosphoric acid concentration of the phosphoric acid aqueous solution in the storage tank 4 is suppressed from increasing. The water supply to the phosphoric acid aqueous solution is carried out before the wafer W is carried in.
控制部40係藉由開閉第1水閥54來切換從多道噴嘴50 的供應/停止供應，以調節朝儲存槽4內的磷酸水溶液所供應之水量。因為磷酸水溶液的磷酸濃度調整係利用水供應，因而從多道噴嘴50所供應的磷酸水溶液流量只要小流量便足夠。藉由此種水供應，儲存槽4內的磷酸水溶液之磷酸濃度與溫度，分別被穩定控制呈預定的磷酸濃度(其中一例係81%)及溫度(其中一例係約140℃)。 The control unit 40 switches the multi-channel nozzle 50 by opening and closing the first water valve 54. Supply/stop supply to regulate the amount of water supplied to the aqueous phosphoric acid solution in storage tank 4. Since the phosphoric acid concentration adjustment of the aqueous phosphoric acid solution utilizes the water supply, it is sufficient that the flow rate of the aqueous phosphoric acid solution supplied from the multi-channel nozzle 50 is small. With this water supply, the phosphoric acid concentration and temperature of the phosphoric acid aqueous solution in the storage tank 4 are stably controlled to a predetermined phosphoric acid concentration (one of which is 81%) and the temperature (one of which is about 140 ° C).
在儲存槽4內的磷酸水溶液之溫度及磷酸濃度，分別被控制於所需溫度及濃度的狀態下，控制搬送機器人(未圖示)，將未處理晶圓W搬入至處理室2內。在未處理晶圓W的表面形成有矽氮化膜及矽氧化膜。所搬入的晶圓W被配置於與儲存槽4之底面29呈對向的既定交接位置，控制部40驅動夾持銷驅動機構43，將複數夾持銷34從開放位置導引至夾持位置。藉此，如圖4C所示，被搬入的晶圓W便依表面朝上的狀態由旋轉夾具3保持。另外，在晶圓W位於交接位置的狀態時，晶圓W下面與底面29間之間隔係設為例如50mm左右。 The temperature of the phosphoric acid aqueous solution and the phosphoric acid concentration in the storage tank 4 are controlled to a desired temperature and concentration, and the transfer robot (not shown) is controlled to carry the unprocessed wafer W into the processing chamber 2. A tantalum nitride film and a tantalum oxide film are formed on the surface of the unprocessed wafer W. The loaded wafer W is placed at a predetermined delivery position that faces the bottom surface 29 of the storage tank 4, and the control unit 40 drives the clamp pin drive mechanism 43 to guide the plurality of clamp pins 34 from the open position to the clamp position. . Thereby, as shown in FIG. 4C, the loaded wafer W is held by the rotating jig 3 in a state in which the surface is facing upward. Further, when the wafer W is in the state of the transfer position, the interval between the lower surface of the wafer W and the bottom surface 29 is, for example, about 50 mm.
若由旋轉夾具3保持晶圓W，則如圖4D所示，控制部40控制升降機構27，使儲存槽4上升至上位置。在儲存槽4位於上位置的狀態下，晶圓W浸漬於儲存槽4的磷酸水溶液中。此時，儲存槽4的磷酸水溶液液面位於較晶圓W的表面更靠上方，結果利用磷酸水溶液覆著晶圓W表面全域。藉由晶圓W浸漬於磷酸水溶液中，而對晶圓W表面施行磷酸蝕刻處理(步驟S1)。磷酸蝕刻處理係執行至經過預定的蝕刻時間。 When the wafer W is held by the rotating jig 3, as shown in FIG. 4D, the control unit 40 controls the elevating mechanism 27 to raise the storage tank 4 to the upper position. The wafer W is immersed in the phosphoric acid aqueous solution of the storage tank 4 in a state where the storage tank 4 is at the upper position. At this time, the liquid level of the phosphoric acid aqueous solution in the storage tank 4 is located above the surface of the wafer W, and as a result, the entire surface of the wafer W is covered with the phosphoric acid aqueous solution. The surface of the wafer W is subjected to phosphoric acid etching treatment by immersing the wafer W in the phosphoric acid aqueous solution (step S1). The phosphoric acid etching process is performed until a predetermined etching time has elapsed.
在儲存槽4位於上位置的狀態時，晶圓W下面與儲存槽4底面29間之間隔W1係設定為例如3mm左右。在此狀態下，磷酸水溶液的液面位於晶圓W上方約3mm處。另外，晶圓W的厚度係 例如0.775mm。另外，間隔W1係在0.3~3mm範圍內適當設定。 When the storage tank 4 is in the upper position, the interval W1 between the lower surface of the wafer W and the bottom surface 29 of the storage tank 4 is set to, for example, about 3 mm. In this state, the liquid level of the aqueous phosphoric acid solution is located about 3 mm above the wafer W. In addition, the thickness of the wafer W is For example 0.775mm. Further, the interval W1 is appropriately set within a range of 0.3 to 3 mm.
因為晶圓W的下面與儲存槽4的底面29呈接近，因而由旋轉夾具3保持的晶圓W便從儲存槽4的底面29利用熱輻射被加熱。在儲存槽4位於上位置的狀態時，因為底面29與晶圓W下面呈平行，因而從儲存槽4對晶圓W所賦予的每單位面積熱量，係在晶圓W全域呈大致均勻。 Since the lower surface of the wafer W is close to the bottom surface 29 of the storage tank 4, the wafer W held by the rotating jig 3 is heated from the bottom surface 29 of the storage tank 4 by heat radiation. When the storage tank 4 is in the upper position, since the bottom surface 29 is parallel to the lower surface of the wafer W, the heat per unit area given to the wafer W from the storage tank 4 is substantially uniform throughout the wafer W.
再者，如圖4E所示，在磷酸蝕刻步驟中，適當地朝儲存槽4的磷酸水溶液供應水。控制部40開啟第1水閥54，從多道噴嘴50的各吐出口52滴下水的液滴。因為從多數吐出口52分別吐出水的液滴，因而對儲存槽4中所儲存的磷酸水溶液呈大致均勻地供應水。藉此，儲存槽4內的磷酸水溶液之磷酸濃度及溫度便分別被穩定控制於預定的磷酸濃度(其中一例係81%)及溫度(其中一例係約140℃)。 Further, as shown in FIG. 4E, in the phosphoric acid etching step, water is appropriately supplied to the phosphoric acid aqueous solution of the storage tank 4. The control unit 40 opens the first water valve 54 and drops droplets of water from the respective discharge ports 52 of the multi-nozzle 50. Since the droplets of water are discharged from the plurality of discharge ports 52, the phosphoric acid aqueous solution stored in the storage tank 4 is supplied with water substantially uniformly. Thereby, the phosphoric acid concentration and temperature of the phosphoric acid aqueous solution in the storage tank 4 are stably controlled to a predetermined phosphoric acid concentration (one of which is 81%) and the temperature (one of which is about 140 ° C).
再者，磷酸蝕刻步驟中，控制部40係控制旋轉馬達14，使晶圓W依預定的低速度(例如10~300rpm範圍)旋轉。藉由晶圓W的旋轉，在儲存溝41中滯留的磷酸水溶液便被攪拌。藉此，使磷酸水溶液的磷酸濃度及溫度呈均勻分佈。 Further, in the phosphoric acid etching step, the control unit 40 controls the rotary motor 14 to rotate the wafer W at a predetermined low speed (for example, in the range of 10 to 300 rpm). The phosphoric acid aqueous solution remaining in the storage tank 41 is stirred by the rotation of the wafer W. Thereby, the phosphoric acid concentration and temperature of the phosphoric acid aqueous solution are uniformly distributed.
圖5所示係利用儲存槽4之底面29進行的晶圓W加熱之圖。 FIG. 5 is a diagram showing heating of the wafer W by the bottom surface 29 of the storage tank 4.
如前述，儲存槽4的底面29與晶圓W的下面大致全面呈對向。又，儲存槽4的底面29、與晶圓W的下面間之間隔W1係在例如0.3~3mm範圍內設定為例如3mm左右。所以，晶圓W便利用熱傳導被賦予來自儲存槽4底面29的熱，且利用熱輻射被賦予熱。藉此，判斷晶圓W會升溫至160℃左右。 As described above, the bottom surface 29 of the reservoir 4 is substantially entirely opposed to the lower surface of the wafer W. Moreover, the interval W1 between the bottom surface 29 of the storage tank 4 and the lower surface of the wafer W is set to, for example, about 3 mm in a range of, for example, 0.3 to 3 mm. Therefore, the wafer W is advantageously given heat from the bottom surface 29 of the storage tank 4 by heat conduction, and is imparted with heat by heat radiation. Thereby, it is judged that the wafer W is heated up to about 160 °C.
圖6所示係磷酸水溶液的磷酸濃度(H3PO4 concentration)、與磷酸水溶液沸點(沸騰點，Boiling Point)間之關係圖。圖6中的曲線係表示飽和濃度曲線，較該曲線更靠下方的區域係屬於磷酸水溶液可存在的區域(H3PO4 existence region)。 Fig. 6 is a graph showing the relationship between the phosphoric acid concentration (H 3 PO 4 concentration) of the phosphoric acid aqueous solution and the boiling point (boiling point) of the phosphoric acid aqueous solution. The curve in Fig. 6 indicates a saturation concentration curve, and the region below the curve belongs to a region (H 3 PO 4 existence region) in which an aqueous phosphoric acid solution can exist.
如圖6所示，隨磷酸水溶液的磷酸濃度提高，磷酸水溶液的沸點亦會提高。例如具有81%濃度的磷酸水溶液，沸點係約140℃。通常81%濃度的磷酸水溶液在液相時並不會升溫至140℃以上。 As shown in Fig. 6, as the phosphoric acid concentration of the phosphoric acid aqueous solution is increased, the boiling point of the phosphoric acid aqueous solution is also increased. For example, it has an aqueous solution of phosphoric acid having a concentration of 81% and a boiling point of about 140 °C. Usually, the 81% strength aqueous phosphoric acid solution does not rise to 140 ° C or higher in the liquid phase.
另一方面，具有160℃溫度的磷酸水溶液最大濃度係約86%。所以，具有160℃溫度的磷酸水溶液在通常狀態下並不會發生濃度未滿約86%的情形。 On the other hand, the maximum concentration of the aqueous phosphoric acid solution having a temperature of 160 ° C is about 86%. Therefore, an aqueous phosphoric acid solution having a temperature of 160 ° C does not cause a concentration of less than about 86% in a normal state.
圖7所示係磷酸水溶液的磷酸濃度、及磷酸水溶液溫度與矽氮化膜蝕刻速率間之關係圖表。圖7中，就使用具150℃、160℃及170℃溫度的磷酸水溶液，對矽氮化膜施行蝕刻時的蝕刻速率，係依實線圖示。又，圖7中，磷酸水溶液的沸點係依虛線圖示。 Fig. 7 is a graph showing the relationship between the phosphoric acid concentration of the phosphoric acid aqueous solution and the phosphoric acid aqueous solution temperature and the cerium nitride film etching rate. In Fig. 7, the etching rate at the time of etching the tantalum nitride film using an aqueous phosphoric acid solution having a temperature of 150 ° C, 160 ° C, and 170 ° C is shown by a solid line. In addition, in FIG. 7, the boiling point of the phosphoric acid aqueous solution is shown by the broken line.
如圖7所示，若磷酸濃度呈一定，在磷酸水溶液溫度170℃時的蝕刻速率呈最高，在磷酸水溶液溫度160℃時的蝕刻速率為第二高。所以，若磷酸濃度呈一定，磷酸水溶液的溫度越高，則蝕刻速率越高。 As shown in Fig. 7, when the phosphoric acid concentration was constant, the etching rate at the temperature of the phosphoric acid aqueous solution of 170 ° C was the highest, and the etching rate at the temperature of the phosphoric acid aqueous solution of 160 ° C was the second highest. Therefore, if the phosphoric acid concentration is constant, the higher the temperature of the phosphoric acid aqueous solution, the higher the etching rate.
另一方面，磷酸水溶液溫度為150℃時，蝕刻速率係隨磷酸濃度增加而減少。相關磷酸水溶液溫度為160℃及170℃時亦相同。所以，若磷酸水溶液的溫度呈一定，則磷酸濃度越低，蝕刻速率越高。又，雖未圖示，相關磷酸水溶液溫度為140℃時亦相同。 On the other hand, when the temperature of the phosphoric acid aqueous solution is 150 ° C, the etching rate decreases as the phosphoric acid concentration increases. The same applies to the temperature of the aqueous phosphoric acid solution at 160 ° C and 170 ° C. Therefore, if the temperature of the aqueous phosphoric acid solution is constant, the lower the phosphoric acid concentration, the higher the etching rate. Further, although not shown, the same applies to the case where the temperature of the aqueous phosphoric acid solution is 140 °C.
合併參照圖5~圖7，針對磷酸蝕刻步驟的儲存槽4內之磷酸水溶液狀態進行說明。在儲存槽4中儲存經濃度調節為81%的磷酸水溶液。該磷酸水溶液的沸點約140℃。儲存槽4中所儲存的磷酸水 溶液係利用儲存槽4的底面29被加熱，並維持於沸點的約140℃狀態。 The state of the phosphoric acid aqueous solution in the storage tank 4 of the phosphoric acid etching step will be described with reference to FIGS. 5 to 7. An aqueous phosphoric acid solution having a concentration adjusted to 81% was stored in the storage tank 4. The aqueous phosphoric acid solution has a boiling point of about 140 °C. Phosphate water stored in storage tank 4 The solution is heated by the bottom surface 29 of the storage tank 4 and maintained at a boiling point of about 140 °C.
利用由儲存槽4的底面29所進行加熱，晶圓W升溫至約160℃。此狀態下，在與晶圓W表面間之邊界部分處的磷酸水溶液，會形成越接近晶圓W表面則溫度越高的溫度梯度。結果，在晶圓W表面與磷酸水溶液相接觸的邊界實現例如約160℃的高溫狀態。 The wafer W is heated to about 160 ° C by heating by the bottom surface 29 of the storage tank 4. In this state, the phosphoric acid aqueous solution at the boundary portion with the surface of the wafer W forms a temperature gradient which is higher as the temperature is closer to the surface of the wafer W. As a result, a high temperature state of, for example, about 160 ° C is achieved at the boundary where the surface of the wafer W is in contact with the aqueous phosphoric acid solution.
換言之，在晶圓W表面與磷酸水溶液相接觸的邊界，可實現局部性呈極高溫、且磷酸濃度維持較低的狀態。具體而言，在該邊界處，可實現溫度約160℃且濃度約81%之尋常不會存在的高溫低濃度狀態(此狀態下的矽氮化膜蝕刻速率及矽氮化膜選擇比一例，係如「實施例」的圖7中所示)。因為該狀態的磷酸水溶液會作用於晶圓W表面的矽氮化膜，因而能大幅提高矽氮化膜的蝕刻速率，同時可將矽氮化膜的選擇比維持較高狀態。 In other words, in the boundary where the surface of the wafer W is in contact with the aqueous phosphoric acid solution, it is possible to achieve a state in which the locality is extremely high and the phosphoric acid concentration is kept low. Specifically, at the boundary, a high-temperature low-concentration state in which a temperature of about 160 ° C and a concentration of about 81% is not present can be realized (the 矽 nitride film etching rate and the 矽 nitride film selection ratio in this state are, for example, This is shown in Fig. 7 of the "Example". Since the phosphoric acid aqueous solution in this state acts on the tantalum nitride film on the surface of the wafer W, the etching rate of the tantalum nitride film can be greatly improved, and the selection ratio of the tantalum nitride film can be maintained at a high level.
但是，從晶圓W開始浸漬於磷酸水溶液起，若經過預定蝕刻時間，則如圖4F所示，控制部40係控制升降機構27，使儲存槽4下降至下位置。藉此，結束由儲存槽4的底面29所進行的晶圓W加熱。 However, when the wafer W is immersed in the phosphoric acid aqueous solution and the predetermined etching time elapses, the control unit 40 controls the elevating mechanism 27 to lower the storage tank 4 to the lower position as shown in FIG. 4F. Thereby, the heating of the wafer W by the bottom surface 29 of the storage tank 4 is completed.
其次，控制部40係控制旋轉馬達14，使晶圓W的旋轉速度提升至既定的清洗處理速度(300~1500rpm範圍，例如1000rpm)，且開啟第2水閥32，從水噴嘴30的吐出口朝晶圓W的旋轉中心附近供應DIW(步驟S2：清洗步驟)。朝晶圓W表面供應的DIW承受因晶圓W旋轉所產生的離心力，在晶圓W表面上朝晶圓W周緣流動。藉此，晶圓W表面所附著的磷酸水溶液是利用DIW沖洗。 Next, the control unit 40 controls the rotary motor 14 to raise the rotational speed of the wafer W to a predetermined cleaning processing speed (300 to 1500 rpm, for example, 1000 rpm), and opens the second water valve 32 from the discharge port of the water nozzle 30. The DIW is supplied toward the vicinity of the rotation center of the wafer W (step S2: cleaning step). The DIW supplied to the surface of the wafer W is subjected to centrifugal force generated by the rotation of the wafer W, and flows toward the periphery of the wafer W on the surface of the wafer W. Thereby, the aqueous phosphoric acid solution attached to the surface of the wafer W is washed by DIW.
再者，與該清洗步驟並行，執行利用水洗淨儲存槽4內壁面(底面29、環狀溝37壁面及外周壁38內周面)的儲存槽洗淨。該 儲存槽洗淨係由控制部40開啟水下閥64，而從下吐出口62吐出水。從下吐出口62吐出的水會滯留於儲存槽4的儲存溝41。從下吐出口62的水吐出係在溢出儲存溝41之後仍持續進行。藉此，在儲存槽4內壁面上所附著的磷酸水溶液是利用DIW沖洗。 Further, in parallel with the washing step, the storage tank in which the inner wall surface (the bottom surface 29, the annular groove 37 wall surface, and the inner peripheral wall 38 inner circumferential surface) of the storage tank 4 is washed with water is washed. The The storage tank is cleaned by the control unit 40 to open the underwater valve 64, and the water is discharged from the lower discharge port 62. The water discharged from the lower discharge port 62 is retained in the storage groove 41 of the storage tank 4. The water discharge from the lower discharge port 62 continues after the overflow storage tank 41. Thereby, the aqueous phosphoric acid solution attached to the inner wall surface of the storage tank 4 is rinsed by DIW.
若DIW的供應持續經過既定清洗時間，則關閉第2水閥32，停止DIW朝晶圓W表面的供應。又，在停止DIW供應之同時，亦關閉水下閥64，而停止朝儲存槽41的水供應。 When the supply of the DIW continues for a predetermined cleaning time, the second water valve 32 is closed to stop the supply of the DIW to the surface of the wafer W. Further, while stopping the supply of the DIW, the underwater valve 64 is also closed, and the supply of water to the storage tank 41 is stopped.
然後，控制部40驅動旋轉馬達14，使晶圓W的旋轉速度提高至既定的高旋轉速度(例如1500~2500rpm)，執行甩乾晶圓W上所附著DIW而乾燥的旋轉乾燥(步驟S3)。利用步驟S3的旋轉乾燥，晶圓W上所附著的DIW便被除去。 Then, the control unit 40 drives the rotary motor 14 to increase the rotational speed of the wafer W to a predetermined high rotational speed (for example, 1500 to 2500 rpm), and performs spin drying in which the DIW adhering to the wafer W is dried and dried (step S3). . By the spin drying of step S3, the DIW attached to the wafer W is removed.
若旋轉乾燥執行經過預定的旋轉乾燥時間，則控制部40會驅動旋轉馬達14，並停止旋轉夾具3的旋轉。藉此，結束對1片晶圓W的光阻除去處理。然後，控制部40驅動夾持銷驅動機構43，將複數夾持銷34從夾持位置導引至開放位置，再將處理完畢的晶圓W交接至搬送機器人。利用搬送機器人將晶圓W從處理室2中搬出。 When the spin drying is performed for a predetermined spin drying time, the control unit 40 drives the rotary motor 14 and stops the rotation of the rotary jig 3. Thereby, the photoresist removal processing for one wafer W is completed. Then, the control unit 40 drives the pin driving mechanism 43 to guide the plurality of pin 34 from the nip position to the open position, and then transfers the processed wafer W to the transfer robot. The wafer W is carried out from the processing chamber 2 by the transfer robot.
依上述，根據本實施形態，藉由儲存槽4的底面29對晶圓W施行加熱，使晶圓W升溫至約160℃。在此狀態下，於與晶圓W表面間之邊界部分的磷酸水溶液，形成越接近晶圓W表面，則溫度越高的溫度梯度。結果，在與晶圓W表面間之邊界部分的磷酸水溶液，可實現極高溫、且磷酸濃度維持較低的狀態(維持溫度約160℃且濃度約81%的高溫且磷酸濃度較低的狀態)。因為此狀態的磷酸水溶液會作用於晶圓W表面的矽氮化膜，因而可大幅提高矽氮化膜的蝕刻速率，同時可使矽氮化膜的選擇比維持較高狀態。 As described above, according to the present embodiment, the wafer W is heated by the bottom surface 29 of the storage tank 4 to raise the temperature of the wafer W to about 160 °C. In this state, the phosphoric acid aqueous solution at the boundary portion with the surface of the wafer W forms a temperature gradient which is higher as the temperature is closer to the surface of the wafer W. As a result, the phosphoric acid aqueous solution at the boundary portion with the surface of the wafer W can be in a state of extremely high temperature and a low phosphoric acid concentration (a state in which the temperature is maintained at about 160 ° C and the concentration is about 81% and the phosphoric acid concentration is low). . Since the phosphoric acid aqueous solution in this state acts on the tantalum nitride film on the surface of the wafer W, the etching rate of the tantalum nitride film can be greatly improved, and the selection ratio of the tantalum nitride film can be maintained at a high level.
圖8所示係本發明第2實施形態的基板處理裝置101之構造示意圖。圖8中，對應於第1實施形態所示各部位的部分，賦予與圖1~圖7的情況為相同元件符號，並省略說明。 Fig. 8 is a view showing the configuration of a substrate processing apparatus 101 according to a second embodiment of the present invention. In FIG. 8, the parts corresponding to the respective portions shown in the first embodiment are denoted by the same reference numerals as in the case of FIGS. 1 to 7, and the description thereof is omitted.
基板處理裝置101係就與第1實施形態的基板處理裝置1間之不同處在於：作為用以供應水的水供應手段係取代多道噴嘴50，改為呈噴霧狀吐出(噴霧)水液滴的噴霧噴嘴102。噴霧噴嘴102連接有供應來自水供應源之水的第3水供應管103。在第3水供應管103中介設有用以關閉第3水供應管103的第3水閥104。若第3水閥104被開啟，則從第3水供應管103朝噴霧噴嘴102供應水，再從噴霧噴嘴102朝下方呈噴霧狀吐出(噴霧)水的液滴。從噴霧噴嘴102吐出的水液滴係較細膩(較細小)於前述第1實施形態從多道噴嘴吐出的水液滴。 The difference between the substrate processing apparatus 101 and the substrate processing apparatus 1 of the first embodiment is that the water supply means for supplying water replaces the multi-channel nozzle 50, and discharges (sprays) water droplets in a spray form instead. Spray nozzle 102. The spray nozzle 102 is connected to a third water supply pipe 103 that supplies water from a water supply source. A third water valve 104 for closing the third water supply pipe 103 is interposed in the third water supply pipe 103. When the third water valve 104 is opened, water is supplied from the third water supply pipe 103 to the spray nozzle 102, and droplets of water are sprayed (sprayed) downward from the spray nozzle 102. The water droplets discharged from the spray nozzle 102 are finer (smaller) than the water droplets discharged from the multi-channel nozzle in the first embodiment.
根據第2實施形態，因為從噴霧噴嘴102呈噴霧狀吐出水的液滴，因而可對儲存槽4中所儲存的磷酸水溶液呈大致均勻地供應水，結果可使磷酸水溶液的磷酸濃度保持呈均勻。 According to the second embodiment, since the droplets of the water are discharged from the spray nozzle 102 in a spray form, the phosphoric acid aqueous solution stored in the storage tank 4 can be supplied with water substantially uniformly, and as a result, the phosphoric acid concentration of the phosphoric acid aqueous solution can be kept uniform. .
再者，從噴霧噴嘴102朝磷酸水溶液供應更細膩的水液滴。因為水與磷酸水溶液係該等的比重、黏度等不同，因而會有比較不易混合的傾向。然而，因為液滴的大小越細膩便越容易混合，因而藉由將細膩液滴狀態的水供應至磷酸水溶液，而可使水與磷酸水溶液順暢地混合。 Further, finer water droplets are supplied from the spray nozzle 102 toward the aqueous phosphoric acid solution. Since water and phosphoric acid aqueous solutions differ in specific gravity, viscosity, and the like, they tend to be less likely to be mixed. However, since the finer the droplet size, the easier the mixing is, the water and the phosphoric acid aqueous solution can be smoothly mixed by supplying water in a fine droplet state to the aqueous phosphoric acid solution.
另外，圖8表示當噴霧噴嘴102僅設置1個的情況，但亦從左右方向各自不同位置處的複數噴霧噴嘴呈噴霧狀吐出水。 In addition, although FIG. 8 shows a case where only one spray nozzle 102 is provided, the plurality of spray nozzles at different positions in the left-right direction also spray water in a spray form.
圖9所示本發明第3實施形態的基板處理裝置201之構造示意圖。圖9中，對應於第1實施形態所示各部位的部分，賦予與圖1~圖7的情況為相同元件符號，並省略說明。 Fig. 9 is a view showing the configuration of a substrate processing apparatus 201 according to a third embodiment of the present invention. In FIG. 9, the parts corresponding to the respective portions shown in the first embodiment are denoted by the same reference numerals as in the case of FIGS. 1 to 7, and the description thereof is omitted.
基板處理裝置201係就與第1實施形態的基板處理裝置1間之不同處在於：儲存槽係採用非加熱型儲存槽204。又，在旋轉夾具3的上方設有為加熱晶圓W表面用之加熱器頭203之處，亦不同於基板處理裝置1。 The substrate processing apparatus 201 differs from the substrate processing apparatus 1 of the first embodiment in that the storage tank is a non-heating type storage tank 204. Further, a heater head 203 for heating the surface of the wafer W is provided above the rotating jig 3, and is also different from the substrate processing apparatus 1.
儲存槽204係使用例如陶瓷、SiC、耐熱樹脂等形成。儲存槽204的構造係除了未埋設加熱器28(參照圖1)而未發揮作為加熱手段機能此點之外，其餘均與圖1所示儲存槽4為共同構造。即，儲存槽204係呈水平姿勢配置，並維持該水平姿勢狀態下進行升降。利用升降機構(參照圖1)27的驅動，使儲存槽204在其下面接近於旋轉基座12上面的下位置、與儲存槽204底面29在晶圓W下面依微小間隔W1隔開而呈對向配置的上位置之間進行升降。藉此，可變更儲存槽204與晶圓W間的間隔。 The storage tank 204 is formed using, for example, ceramic, SiC, heat resistant resin, or the like. The structure of the storage tank 204 is the same as that of the storage tank 4 shown in Fig. 1 except that the heater 28 (see Fig. 1) is not embedded and the function as a heating means is not exhibited. That is, the storage tank 204 is disposed in a horizontal posture and is raised and lowered while maintaining the horizontal posture. With the driving of the elevating mechanism (refer to FIG. 1) 27, the storage tank 204 is placed at a lower position on the lower surface of the rotating base 12 at its lower surface, and is spaced apart from the bottom surface 29 of the storage tank 204 by a minute interval W1 at the bottom of the wafer W. Lift up and down between the upper positions of the configuration. Thereby, the interval between the storage tank 204 and the wafer W can be changed.
利用儲存槽204的底面29與外周壁38的內周面，在底面29的上方劃分出用以滯留液體的儲存溝41。在儲存槽204位於上位置的狀態、且儲存溝41充滿液體的狀態時，則利用儲存溝41中所滯留的液體浸漬表面朝上的晶圓W。即，利用儲存溝41中所滯留的液體覆蓋著晶圓W表面全域。又，即便晶圓W旋轉中，儲存溝41仍不會旋轉而呈靜止(非旋轉狀態)。 The storage groove 41 for retaining the liquid is partitioned above the bottom surface 29 by the bottom surface 29 of the storage tank 204 and the inner circumferential surface of the outer peripheral wall 38. When the storage tank 204 is in the upper position and the storage tank 41 is filled with the liquid, the wafer W whose surface is facing upward is immersed by the liquid retained in the storage groove 41. That is, the entire surface of the wafer W is covered with the liquid retained in the storage groove 41. Further, even if the wafer W is rotated, the storage groove 41 does not rotate and is stationary (non-rotation state).
加熱器頭203係形成具有晶圓W同等直徑的圓板狀，使用例如陶瓷等形成。加熱器頭203係利用支架205從上方依水平姿勢保持。在加熱器頭203的內部埋設電阻式加熱器208。加熱器頭203係設有由水平平坦面構成的下面(發熱部)209。加熱器頭203的下面209係橫跨由旋轉夾具3所保持晶圓W的表面全域呈相對向配置。在加熱器208呈開啟狀態時，利用朝加熱器208的供電而使該加熱器208發 熱，下面209全域便發熱。下面209的全域中，加熱器28呈開啟狀態時的下面209每單位面積發熱量係設定呈均勻。 The heater head 203 is formed in a disk shape having the same diameter as the wafer W, and is formed using, for example, ceramics. The heater head 203 is held in a horizontal posture from above by the bracket 205. A resistance heater 208 is embedded in the heater head 203. The heater head 203 is provided with a lower surface (heat generating portion) 209 composed of a horizontal flat surface. The lower surface 209 of the heater head 203 is disposed across the entire surface of the wafer W held by the rotating jig 3. When the heater 208 is in an open state, the heater 208 is made to be powered by the heater 208. Hot, the whole 209 below will be hot. In the entire field of 209 below, when the heater 28 is in the open state, the calorific value per unit area of the lower surface 209 is set to be uniform.
支架205接合有用以使加熱器頭203升降的加熱器升降機構206。加熱器升降機構206係電氣式連接於控制部40(參照圖2)。 The bracket 205 engages a heater lift mechanism 206 that is used to raise and lower the heater head 203. The heater elevating mechanism 206 is electrically connected to the control unit 40 (see FIG. 2).
利用此種基板處理裝置201所執行的磷酸蝕刻處理，係與第1實施形態同樣(參照圖4A)，在儲存槽204的儲存溝41中滯留磷酸水溶液。然後，未處理晶圓W被搬入至處理室2內，晶圓W在旋轉夾具3(的夾持構件13)上保持呈表面朝上狀態。 The phosphoric acid etching treatment performed by the substrate processing apparatus 201 is the same as in the first embodiment (see FIG. 4A), and the phosphoric acid aqueous solution is retained in the storage groove 41 of the storage tank 204. Then, the unprocessed wafer W is carried into the processing chamber 2, and the wafer W is held on the surface of the rotating jig 3 (the holding member 13) with the surface facing upward.
若由旋轉夾具3保持晶圓W，則控制部40控制升降機構27(參照圖1)，使儲存槽204上升至上位置。在儲存槽204位於上位置的狀態時，晶圓W會浸漬於儲存槽204的磷酸水溶液中。此時，儲存槽204的磷酸水溶液液面位於較晶圓W表面更靠上方，結果利用磷酸水溶液覆蓋著晶圓W表面全域。藉由晶圓W浸漬於磷酸水溶液中，而對晶圓W表面施行磷酸蝕刻處理(相當於圖3的步驟S1)。 When the wafer W is held by the rotating jig 3, the control unit 40 controls the elevating mechanism 27 (see FIG. 1) to raise the storage tank 204 to the upper position. When the storage tank 204 is in the upper position, the wafer W is immersed in the phosphoric acid aqueous solution of the storage tank 204. At this time, the liquid level of the phosphoric acid aqueous solution in the storage tank 204 is located above the surface of the wafer W, and as a result, the entire surface of the wafer W is covered with the phosphoric acid aqueous solution. The surface of the wafer W is subjected to a phosphoric acid etching treatment by immersing the wafer W in an aqueous phosphoric acid solution (corresponding to step S1 of FIG. 3).
再者，控制部40係控制加熱器升降機構206，使加熱器頭203下降至加熱器頭203下面209接近晶圓W表面(上面)的接近位置。在加熱器頭203位於接近位置的狀態時，晶圓W表面(上面)與加熱器頭203下面209間之間隔係設定為例如約2mm左右。當加熱器頭203係使用對磷酸水溶液具耐藥性材質來形成時，可將加熱器頭203的下部浸漬於儲存槽204的磷酸水溶液中，且可在此狀態下加熱晶圓W。 Further, the control unit 40 controls the heater elevating mechanism 206 to lower the heater head 203 to a position close to the surface 209 of the heater head 203 near the surface (upper surface) of the wafer W. When the heater head 203 is in the close position, the interval between the surface (upper surface) of the wafer W and the lower surface 209 of the heater head 203 is set to, for example, about 2 mm. When the heater head 203 is formed using a material resistant to aqueous phosphoric acid, the lower portion of the heater head 203 can be immersed in the phosphoric acid aqueous solution of the storage tank 204, and the wafer W can be heated in this state.
因為晶圓W表面(上面)與加熱器頭203下面209的間隔係2mm左右，因而由旋轉夾具3保持的晶圓W被會從加熱器頭203 的下面209利用熱輻射進行加熱。因為加熱器頭203下面209與晶圓W表面呈平行，因而從加熱器頭203朝晶圓W所賦予的每單位面積熱量係橫跨晶圓W全域呈大致均勻。藉由利用加熱器頭203施行加熱，晶圓W的溫度會升溫至較磷酸水溶液液溫略高溫(預測約160℃)，並維持該溫度。在此狀態下，在與晶圓W表面的邊界部分之磷酸水溶液，會形成越接近晶圓W表面則溫度越高的溫度梯度。然後，若經過預定的蝕刻時間，則控制加熱器升降機構206，使加熱器頭203從接近位置朝上方大幅退縮，藉此便停止利用加熱器頭203進行的晶圓W加熱。 Since the interval between the surface (upper surface) of the wafer W and the lower surface 209 of the heater head 203 is about 2 mm, the wafer W held by the rotating jig 3 is taken from the heater head 203. The lower surface 209 is heated by thermal radiation. Since the lower surface 209 of the heater head 203 is parallel to the surface of the wafer W, the amount of heat per unit area imparted from the heater head 203 toward the wafer W is substantially uniform across the entire area of the wafer W. By heating by the heater head 203, the temperature of the wafer W is raised to a slightly higher temperature (predicted by about 160 ° C) than the liquid temperature of the phosphoric acid solution, and the temperature is maintained. In this state, the phosphoric acid aqueous solution at the boundary portion with the surface of the wafer W forms a temperature gradient which is higher as the temperature is closer to the surface of the wafer W. Then, when the predetermined etching time elapses, the heater elevating mechanism 206 is controlled to greatly retract the heater head 203 from the approaching position, thereby stopping the heating of the wafer W by the heater head 203.
然後，與第1實施形態的情況同樣，執行清洗處理(相當於圖3的步驟S2)及旋轉乾燥(相當於圖3的步驟S3)。 Then, similarly to the case of the first embodiment, the cleaning process (corresponding to step S2 of FIG. 3) and the spin drying (corresponding to step S3 of FIG. 3) are performed.
根據第3實施形態，針對浸漬於儲存槽204的磷酸水溶液中之晶圓W，使用在其上方呈接近配置的加熱器頭203進行加熱。所以，可在未採取於儲存槽204中內建加熱器等的複雜構造情況下，對晶圓W施行良好地加熱。 According to the third embodiment, the wafer W immersed in the phosphoric acid aqueous solution in the storage tank 204 is heated by using the heater head 203 disposed close to the wafer W. Therefore, the wafer W can be favorably heated without taking a complicated structure in which the heater or the like is built in the storage tank 204.
圖10所示係本發明第4實施形態的基板處理裝置301之構造示意圖。圖10中，對應於第3實施形態所示各部位的部分，賦予與圖1~圖7及圖9的情況為相同元件符號，並省略說明。 Fig. 10 is a view showing the configuration of a substrate processing apparatus 301 according to a fourth embodiment of the present invention. In FIG. 10, parts corresponding to the respective portions shown in the third embodiment are denoted by the same reference numerals as in the case of FIGS. 1 to 7 and FIG. 9, and description thereof will be omitted.
基板處理裝置301係就與第3實施形態的基板處理裝置201不同處在於：用以加熱晶圓W表面的加熱器係取代加熱器頭203，改為設置紅外線加熱器(加熱手段)303。 The substrate processing apparatus 301 differs from the substrate processing apparatus 201 of the third embodiment in that a heater for heating the surface of the wafer W is replaced with a heater head 203, and an infrared heater (heating means) 303 is provided instead.
紅外線加熱器303係形成較晶圓W更小徑(例如晶圓W直徑的1/5~1/10左右)且俯視呈圓形狀，相對於由旋轉夾具3保持的晶圓W表面在上方呈對向配置。紅外線加熱器303係內建有下面設有紅外線照射面(發熱部)304A的紅外線燈304。晶圓W表面略全域呈對向 的紅外線照射面304A係與晶圓W表面呈對向。紅外線燈38係由絲狀纖維收容於石英配管內而構成。紅外線燈38可採用鹵素燈、碳製加熱器等所代表的短/中/長波長紅外線加熱器。 The infrared heater 303 is formed to have a smaller diameter than the wafer W (for example, about 1/5 to 1/10 of the diameter of the wafer W) and has a circular shape in plan view, and is superposed on the surface of the wafer W held by the rotating jig 3 Opposite configuration. The infrared heater 303 is internally provided with an infrared lamp 304 having an infrared irradiation surface (heat generating portion) 304A. Wafer W surface slightly across the surface The infrared ray irradiation surface 304A is opposed to the surface of the wafer W. The infrared lamp 38 is configured by accommodating the filament fibers in a quartz pipe. The infrared lamp 38 can be a short/medium/long wavelength infrared heater represented by a halogen lamp, a carbon heater or the like.
支架205結合有用以使紅外線加熱器303圍繞著在晶圓W面外所設置之既定鉛直搖擺軸線進行搖擺的加熱器搖擺機構306。藉由控制加熱器搖擺機構306，紅外線加熱器303可在晶圓W表面的旋轉中心(旋轉軸線A1上)、與周緣部之間，依描繪與晶圓W旋轉方向呈交叉的圓弧狀軌跡進行移動。 The bracket 205 incorporates a heater rocking mechanism 306 that is used to cause the infrared heater 303 to oscillate about a predetermined vertical rocking axis disposed outside of the wafer W. By controlling the heater swing mechanism 306, the infrared heater 303 can draw an arcuate path intersecting the rotation direction of the wafer W between the center of rotation (on the rotation axis A1) of the surface of the wafer W and the peripheral portion. Move.
磷酸蝕刻處理(相當於圖3的步驟S1)時，控制加熱器升降機構206，使紅外線加熱器303的紅外線照射面304A下降至接近晶圓W表面(上面)的接近位置。在紅外線加熱器303位於接近位置的狀態時，晶圓W表面(上面)與紅外線加熱器303的紅外線照射面304A之間隔，係設定為例如10mm左右。此實施形態中，位於接近位置的紅外線加熱器303之紅外線照射面304A並未接觸到儲存槽204的磷酸水溶液。 In the phosphoric acid etching process (corresponding to step S1 of FIG. 3), the heater elevating mechanism 206 is controlled to lower the infrared irradiation surface 304A of the infrared heater 303 to an approaching position close to the surface (upper surface) of the wafer W. When the infrared heater 303 is in the close position, the distance between the surface (upper surface) of the wafer W and the infrared irradiation surface 304A of the infrared heater 303 is set to, for example, about 10 mm. In this embodiment, the infrared ray irradiation surface 304A of the infrared ray heater 303 located at the approximate position does not contact the phosphoric acid aqueous solution of the storage tank 204.
因為晶圓W表面與紅外線照射面304A呈相接近，因而由旋轉夾具3保持的晶圓W，係從紅外線加熱器303的紅外線照射面304A利用熱輻射進行加熱。藉由紅外線加熱器303進行加熱，晶圓W的溫度會升溫至較磷酸水溶液液溫略高溫(預測約160℃)，並維持該溫度狀態。在此狀態下，在與晶圓W表面的邊界部分之磷酸水溶液，會形成越接近晶圓W表面則溫度越高的溫度梯度。然後，若經過預定的蝕刻時間，則控制加熱器升降機構206，使紅外線加熱器303從接近位置朝上方大幅退縮，藉此停止利用紅外線加熱器303進行的晶圓W加熱。 Since the surface of the wafer W is close to the infrared ray irradiation surface 304A, the wafer W held by the rotating jig 3 is heated by the heat radiation from the infrared ray irradiation surface 304A of the infrared ray heater 303. By heating by the infrared heater 303, the temperature of the wafer W is raised to a slightly higher temperature than the liquid temperature of the phosphoric acid solution (predicted to be about 160 ° C), and the temperature state is maintained. In this state, the phosphoric acid aqueous solution at the boundary portion with the surface of the wafer W forms a temperature gradient which is higher as the temperature is closer to the surface of the wafer W. Then, when the predetermined etching time elapses, the heater elevating mechanism 206 is controlled to greatly retract the infrared heater 303 from the approach position, thereby stopping the heating of the wafer W by the infrared heater 303.
另外，利用紅外線加熱器303進行紅外線照射時，使紅外線加熱器303在晶圓W的旋轉中心上方與晶圓W周緣部上方之間進行掃描，或者使紅外線加熱器303靜止配置於除晶圓W旋轉中心外的位置上方。因為晶圓W會圍繞旋轉軸線A1進行旋轉，因而利用從紅外線加熱器303的紅外線照射，便可加熱晶圓W略全域。 When infrared irradiation is performed by the infrared heater 303, the infrared heater 303 is scanned between the rotation center of the wafer W and the upper side of the wafer W, or the infrared heater 303 is statically disposed on the wafer W. Rotate above the center of the center. Since the wafer W is rotated about the rotation axis A1, the wafer W can be heated to a full extent by infrared irradiation from the infrared heater 303.
根據第4實施形態，針對在儲存槽204的磷酸水溶液中浸漬的晶圓W，使用在上方呈接近配置的紅外線加熱器303施行加熱。所以，可在未採取於儲存槽204中內建加熱器等的複雜構造情況下，對晶圓W施行良好地加熱。 According to the fourth embodiment, the wafer W immersed in the phosphoric acid aqueous solution in the storage tank 204 is heated by using the infrared heater 303 disposed close to the upper side. Therefore, the wafer W can be favorably heated without taking a complicated structure in which the heater or the like is built in the storage tank 204.
再者，因為將能提供較大熱量的紅外線加熱器303設計為加熱手段，因而可在加熱手段採用簡便構造的情況下加熱晶圓W。 Further, since the infrared heater 303 capable of supplying a large amount of heat is designed as a heating means, the wafer W can be heated with a simple configuration of the heating means.
另外，第4實施形態中，紅外線加熱器303的直徑亦可形成與晶圓W為同等直徑。此情況，依紅外線加熱器303的下面橫跨晶圓W表面全域呈相對向狀態設置紅外線加熱器303。 Further, in the fourth embodiment, the diameter of the infrared heater 303 may be equal to the diameter of the wafer W. In this case, the infrared heater 303 is disposed in a state in which the lower surface of the infrared ray heater 303 is opposed to the entire surface of the wafer W.
圖11所示係本發明第5實施形態的基板處理裝置401之構造示意圖。圖11中，對應於第1實施形態所示各部位的部分，賦予與圖1~圖7的情況為相同元件符號，並省略說明。 Fig. 11 is a view showing the configuration of a substrate processing apparatus 401 according to a fifth embodiment of the present invention. In FIG. 11 , parts corresponding to the respective portions shown in the first embodiment are denoted by the same reference numerals as in the case of FIGS. 1 to 7 , and description thereof will be omitted.
基板處理裝置401係具備有用以保持晶圓W之基板保持手段的基板保持台402。基板保持台402係取代第1實施形態的旋轉夾具3使用。 The substrate processing apparatus 401 includes a substrate holding stage 402 for holding a substrate holding means of the wafer W. The substrate holding stage 402 is used in place of the rotating jig 3 of the first embodiment.
基板保持台402係具備用以滯留磷酸水溶液的儲存槽404(加熱手段)。儲存槽404係形成例如略圓筒的有底容器狀，使用陶瓷、碳化矽(SiC)等形成。儲存槽404係具備有：具水平平坦之圓形底面409的底面部409A、與從底面409周緣部朝鉛直上方立起的外周壁 408。利用儲存槽404的底面409與外周壁408的內周面，劃分出用以在底面29上方滯留液體的儲存溝405，形成可在底面409上方滯留液體的狀態，儲存溝405的溝深度(在儲存溝41中滯留的液體厚度)係在2mm~11mm範圍內設定為例如約7mm。在儲存槽404的底面部409A埋設有電阻式加熱器406。 The substrate holding stage 402 is provided with a storage tank 404 (heating means) for retaining the phosphoric acid aqueous solution. The storage tank 404 is formed in a bottomed container shape such as a slightly cylindrical shape, and is formed using ceramics, tantalum carbide (SiC) or the like. The storage tank 404 is provided with a bottom surface portion 409A having a horizontally flat circular bottom surface 409 and an outer peripheral wall rising from a peripheral portion of the bottom surface 409 toward the vertical upper side. 408. By using the bottom surface 409 of the storage tank 404 and the inner peripheral surface of the outer peripheral wall 408, a storage groove 405 for retaining liquid above the bottom surface 29 is defined, and a state in which liquid can be retained above the bottom surface 409 is formed, and the groove depth of the storage groove 405 is The thickness of the liquid retained in the storage tank 41 is set to, for example, about 7 mm in the range of 2 mm to 11 mm. A resistance heater 406 is embedded in the bottom surface portion 409A of the storage tank 404.
在加熱器406呈開啟狀態時，利用朝加熱器406供電而使該加熱器406發熱，儲存槽404全體便呈發熱狀態。藉此，底面409全域會發熱。底面409的全域中，加熱器406呈開啟狀態時的底面409每單位面積發熱量係呈均勻設定。 When the heater 406 is in the open state, the heater 406 is heated by the power supply to the heater 406, and the entire storage tank 404 is in a hot state. Thereby, the bottom surface 409 will generate heat throughout the entire area. In the entire bottom surface 409, the amount of heat generated per unit area of the bottom surface 409 when the heater 406 is in the open state is uniformly set.
基板處理裝置401係關聯於儲存槽404，設有使晶圓W相對於儲存槽404進行升降的複數支(例如3支)升降銷403。複數支升降銷403係插通於朝上下貫通儲存槽404底面部409A形成的貫通孔412中，設計成可相對於該儲存槽404的底面409進行升降。又，各升降銷403係由共通的支撐構件410支撐。支撐構件410接合有包含汽缸的升降銷升降機構411。升降銷升降機構411係在複數支升降銷403的前端朝基板保持台402上方突出的位置、與複數支升降銷403的前端退縮於基板保持台402下方的位置之間，使複數支升降銷403一體性進行升降。 The substrate processing apparatus 401 is associated with the storage tank 404, and is provided with a plurality of (for example, three) lift pins 403 for moving the wafer W up and down with respect to the storage tank 404. The plurality of lift pins 403 are inserted into the through holes 412 formed in the bottom surface portion 409A of the vertical storage tank 404, and are designed to be lifted and lowered with respect to the bottom surface 409 of the storage tank 404. Further, each of the lift pins 403 is supported by a common support member 410. The support member 410 is joined with a lift pin lifting mechanism 411 including a cylinder. The lift pin lifting mechanism 411 is provided between a position where the front end of the plurality of lift pins 403 protrudes above the substrate holding table 402 and a position where the front ends of the plurality of lift pins 403 are retracted below the substrate holding table 402, so that the plurality of lift pins 403 Lifting in one piece.
由基板處理裝置401執行的磷酸蝕刻處理，首先控制升降銷升降機構411，使複數支升降銷403的前端突出於基板保持台402的上方。然後，搬入未處理晶圓W，並將該晶圓W載置於複數支升降銷403的前端上。此時，控制升降銷升降機構411，使複數支升降銷403下降，將晶圓W從複數支升降銷403取放至基板保持台402。藉此，在儲存槽404的底面409上，晶圓W呈表面朝上方的狀態載置。 在此狀態下，晶圓W的下面接觸到儲存槽404的底面409。又，在此狀態下，各貫通孔412被晶圓W堵塞。 The phosphoric acid etching process performed by the substrate processing apparatus 401 first controls the lift pin lifting mechanism 411 so that the tip end of the plurality of lift pins 403 protrudes above the substrate holding stage 402. Then, the unprocessed wafer W is carried, and the wafer W is placed on the front end of the plurality of lift pins 403. At this time, the lift pin lifting and lowering mechanism 411 is controlled to lower the plurality of lift pins 403, and the wafer W is taken up from the plurality of lift pins 403 to the substrate holding table 402. Thereby, the wafer W is placed on the bottom surface 409 of the storage tank 404 with the surface facing upward. In this state, the lower surface of the wafer W contacts the bottom surface 409 of the storage tank 404. Further, in this state, each of the through holes 412 is blocked by the wafer W.
接著，在儲存槽404的儲存溝405中滯留磷酸水溶液。因為貫通孔412被晶圓W堵塞，因而不會從儲存溝405溢出磷酸水溶液。然後，晶圓W浸漬於儲存槽404的磷酸水溶液中。此時，儲存槽404的磷酸水溶液液面位於較晶圓W表面更靠上方，結果晶圓W的表面全域被磷酸水溶液所覆蓋。藉由晶圓W浸漬於磷酸水溶液中，便對晶圓W的表面施行磷酸蝕刻處理(相當於圖3的步驟S1)。 Next, an aqueous phosphoric acid solution is retained in the storage tank 405 of the storage tank 404. Since the through hole 412 is blocked by the wafer W, the phosphoric acid aqueous solution is not overflowed from the storage groove 405. Then, the wafer W is immersed in the phosphoric acid aqueous solution of the storage tank 404. At this time, the liquid level of the phosphoric acid aqueous solution in the storage tank 404 is located above the surface of the wafer W, and as a result, the entire surface of the wafer W is covered with the aqueous phosphoric acid solution. By immersing the wafer W in the phosphoric acid aqueous solution, the surface of the wafer W is subjected to a phosphoric acid etching treatment (corresponding to step S1 of FIG. 3).
所以，由基板保持台402保持的晶圓W會利用來自儲存槽404的熱傳導被加熱。藉由利用儲存槽404進行加熱，晶圓W的溫度會升溫至約200℃並維持。在此狀態下，在與晶圓W表面的邊界部分之磷酸水溶液，會形成越接近晶圓W表面則溫度越高的溫度梯度。 Therefore, the wafer W held by the substrate holding stage 402 is heated by heat conduction from the storage tank 404. By heating by the storage tank 404, the temperature of the wafer W is raised to about 200 ° C and maintained. In this state, the phosphoric acid aqueous solution at the boundary portion with the surface of the wafer W forms a temperature gradient which is higher as the temperature is closer to the surface of the wafer W.
根據第5實施形態，藉由利用儲存槽404底面409的熱傳導而進行晶圓W的加熱，晶圓W會升溫至約200℃。在此狀態下，在與晶圓W表面的邊界部分之磷酸水溶液，會形成越接近晶圓W表面則溫度越高的溫度梯度。結果，在與晶圓W表面間之邊界部分的磷酸水溶液，可實現極高溫、且磷酸濃度維持較低的狀態。因為此狀態的磷酸水溶液會作用於晶圓W表面的矽氮化膜，因而可大幅提高矽氮化膜的蝕刻速率，同時可使矽氮化膜的選擇比維持較高狀態。 According to the fifth embodiment, the wafer W is heated by the heat conduction of the bottom surface 409 of the storage tank 404, and the wafer W is heated to about 200 °C. In this state, the phosphoric acid aqueous solution at the boundary portion with the surface of the wafer W forms a temperature gradient which is higher as the temperature is closer to the surface of the wafer W. As a result, the phosphoric acid aqueous solution at the boundary portion with the surface of the wafer W can be at a very high temperature and the phosphoric acid concentration is maintained low. Since the phosphoric acid aqueous solution in this state acts on the tantalum nitride film on the surface of the wafer W, the etching rate of the tantalum nitride film can be greatly improved, and the selection ratio of the tantalum nitride film can be maintained at a high level.
另外，第5實施形態中，如圖11中虛線所示，亦可取代各升降銷403，改為採用設有用以密封貫通孔412之密封部420的升降銷403A。密封部420係設置於升降銷403A的前端部(上端部)，形成越朝上方越擴徑的圓錐梯形狀。此情況，在貫通孔412的開口端部設有由越朝上方越擴徑的圓錐面構成之推拔面421。 Further, in the fifth embodiment, as shown by a broken line in Fig. 11, instead of the lift pins 403, a lift pin 403A provided with a seal portion 420 for sealing the through hole 412 may be used instead. The seal portion 420 is provided at the front end portion (upper end portion) of the lift pin 403A, and has a conical trapezoidal shape that expands in diameter as it goes upward. In this case, a push surface 421 formed of a conical surface that expands in diameter toward the upper side is provided at the opening end portion of the through hole 412.
在升降銷403A退縮於晶圓W下方的退縮位置狀態時，升降銷403A的密封部420被收容於貫通孔412的開口端部。在此狀態下，密封部420的外周面會接觸到推拔面421，而密封部420則將貫通孔412予以密封(堵塞)。因為利用升降銷403A的密封部420將貫通孔412予以密封，因而可更確實防止磷酸水溶液從儲存溝405漏出。 When the lift pin 403A is retracted to the retracted position state below the wafer W, the seal portion 420 of the lift pin 403A is housed in the open end portion of the through hole 412. In this state, the outer circumferential surface of the sealing portion 420 comes into contact with the push surface 421, and the sealing portion 420 seals (blocks) the through hole 412. Since the through hole 412 is sealed by the sealing portion 420 of the lift pin 403A, it is possible to more reliably prevent the phosphoric acid aqueous solution from leaking out of the storage groove 405.
以上，針對本發明的5個實施形態進行說明，惟本發明亦可依其他形態實施。 The five embodiments of the present invention have been described above, but the present invention may be embodied in other forms.
例如可組合第2實施形態與第5實施形態。即，第2實施形態中，亦可取代多道噴嘴50(參照圖1)，改為採用呈噴霧狀吐出(噴霧)水液滴的噴霧噴嘴102。 For example, the second embodiment and the fifth embodiment can be combined. In other words, in the second embodiment, instead of the multi-pass nozzle 50 (see Fig. 1), the spray nozzle 102 that discharges (sprays) water droplets in a spray form may be used instead.
另外，第2實施形態中，圖8雖圖示噴霧噴嘴102係設置1個的情況，但亦可從左右方向不同位置的複數噴霧噴嘴，呈噴霧狀吐出水。 In the second embodiment, FIG. 8 shows a case where one spray nozzle 102 is provided. However, a plurality of spray nozzles at different positions in the left-right direction may be used to spray water in a spray form.
再者，第1、第2及第5實施形態中，雖就使用多道噴嘴50或噴霧噴嘴102，朝儲存槽4、404的磷酸水溶液供應水之情況為例進行說明，惟亦可使用清洗用水噴嘴30，朝儲存槽4、404內的磷酸水溶液供應水(DIW)。 Further, in the first, second, and fifth embodiments, the case where water is supplied to the phosphoric acid aqueous solution of the storage tanks 4 and 404 by using the multi-channel nozzle 50 or the spray nozzle 102 will be described as an example, but cleaning may be used. The water nozzle 30 supplies water (DIW) to the aqueous phosphoric acid solution in the storage tanks 4, 404.
再者，第1、第2及第5實施形態中，雖就對儲存槽4、404內的磷酸水溶液所供應之水以DIW為例進行說明，惟，作為供應至磷酸水溶液的水亦可採用碳酸水、電解離子水、臭氧水、還原水(氫水)、磁化水等。 In addition, in the first, second, and fifth embodiments, the water supplied to the phosphoric acid aqueous solution in the storage tanks 4 and 404 is exemplified by DIW, but water supplied to the phosphoric acid aqueous solution may be used. Carbonated water, electrolytic ionized water, ozone water, reduced water (hydrogen water), magnetized water, and the like.
再者，第1、第2及第5實施形態中，針對使儲存槽4、404具有加熱器機能的情況進行說明，惟亦可構成為儲存槽4、404與加熱器呈分離狀態。此情況，例如亦可構成為從儲存槽4、404的下方 利用加熱器進行加熱。 Further, in the first, second, and fifth embodiments, the case where the storage tanks 4 and 404 have the heater function will be described, but the storage tanks 4 and 404 may be separated from the heater. In this case, for example, it may be configured to be below the storage tanks 4 and 404. Heating is performed using a heater.
再者，第3實施形態中，亦可將加熱器頭203形成較晶圓W直徑充分小的小徑，將開啟狀態的加熱器頭203配置成與晶圓W表面呈對向，並構成使該加熱器頭203沿晶圓W表面進行移動。 Further, in the third embodiment, the heater head 203 may have a small diameter which is sufficiently smaller than the diameter of the wafer W, and the heater head 203 in the open state may be disposed to face the surface of the wafer W, and may be configured to The heater head 203 moves along the surface of the wafer W.
再者，第4實施形態中，亦可將紅外線加熱器303形成較晶圓W直徑充分小的小徑，將開啟狀態的紅外線加熱器303配置成與晶圓W表面呈對向，並構成使該紅外線加熱器303沿晶圓W表面進行移動。 Further, in the fourth embodiment, the infrared heater 303 may have a small diameter which is sufficiently smaller than the diameter of the wafer W, and the infrared heater 303 in the open state may be disposed to face the surface of the wafer W, and may be configured to The infrared heater 303 moves along the surface of the wafer W.
雖針對本發明實施形態進行詳細說明，惟該等僅不過為能瞭解本發明技術內容而使用的具體例而已，本發明不應解釋為僅限定於該等具體例，本發明的範圍僅受所附申請專利範圍限定。 Although the embodiments of the present invention have been described in detail, these are merely specific examples that can be used to understand the technical contents of the present invention. The present invention should not be construed as limited to the specific examples. The scope of the patent application is limited.
本申請案係對應於2012年11月5日對日本特許廳所提出的特願2012-243596號，該申請案的所有揭示均爰引並融入本案中。 This application corresponds to Japanese Patent Application No. 2012-243596 filed on Jan. 5, 2012, to the Japan Patent Office, the entire disclosure of which is incorporated herein by reference.
1‧‧‧基板處理裝置 1‧‧‧Substrate processing unit
2‧‧‧處理室 2‧‧‧Processing room
3‧‧‧旋轉夾具 3‧‧‧Rotary fixture
4‧‧‧儲存槽 4‧‧‧ storage tank
5‧‧‧磷酸水溶液噴嘴 5‧‧‧Aqueous phosphoric acid nozzle
8‧‧‧杯體 8‧‧‧ cup body
11‧‧‧旋轉軸 11‧‧‧Rotary axis
12‧‧‧旋轉基座 12‧‧‧Spinning base
13‧‧‧夾持構件 13‧‧‧Clamping members
14‧‧‧旋轉馬達 14‧‧‧Rotary motor
16‧‧‧磷酸供應管 16‧‧‧phosphoric acid supply tube
17‧‧‧磷酸閥 17‧‧‧Phosphate valve
24‧‧‧貫穿孔 24‧‧‧through holes
25‧‧‧支撐桿 25‧‧‧Support rod
27‧‧‧升降機構 27‧‧‧ Lifting mechanism
28‧‧‧加熱器 28‧‧‧heater
29‧‧‧底面 29‧‧‧ bottom
30‧‧‧水噴嘴 30‧‧‧Water nozzle
31‧‧‧第2水供應管 31‧‧‧2nd water supply pipe
32‧‧‧第2水閥 32‧‧‧2nd water valve
34‧‧‧夾持銷 34‧‧‧Clamp pin
37‧‧‧環狀溝 37‧‧‧ annular groove
38‧‧‧外周壁 38‧‧‧ peripheral wall
41‧‧‧儲存溝 41‧‧‧ Storage ditch
42‧‧‧支撐臂 42‧‧‧Support arm
43‧‧‧夾持銷驅動機構 43‧‧‧Clamping pin drive mechanism
50‧‧‧多道噴嘴 50‧‧‧Multiple nozzles
51‧‧‧噴嘴配管 51‧‧‧Nozzle piping
52‧‧‧吐出口 52‧‧‧Exporting
53‧‧‧第1水供應管 53‧‧‧1st water supply pipe
54‧‧‧第1水閥 54‧‧‧1st water valve
61‧‧‧水供應路 61‧‧‧Water supply road
62‧‧‧下吐出口 62‧‧‧Under the spit
63‧‧‧水下供應管 63‧‧‧Underwater supply pipe
64‧‧‧水下閥 64‧‧‧Underwater valve
A1‧‧‧旋轉軸線 A1‧‧‧Rotation axis
W‧‧‧晶圓 W‧‧‧ wafer
Claims (9)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012243596A JP6061378B2 (en) | 2012-11-05 | 2012-11-05 | Substrate processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201419396A true TW201419396A (en) | 2014-05-16 |
| TWI539514B TWI539514B (en) | 2016-06-21 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102131631A TWI539514B (en) | 2012-11-05 | 2013-09-03 | Substrate processing apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6061378B2 (en) |
| TW (1) | TWI539514B (en) |
| WO (1) | WO2014069079A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI667706B (en) * | 2017-03-27 | 2019-08-01 | 日商斯庫林集團股份有限公司 | Substrate processing method and substrate processing apparatus |
| CN112640058A (en) * | 2018-09-06 | 2021-04-09 | 株式会社荏原制作所 | Substrate processing apparatus |
| US12020954B2 (en) | 2018-09-06 | 2024-06-25 | Ebara Corporation | Substrate processing apparatus |
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| KR101681183B1 (en) | 2014-07-11 | 2016-12-02 | 세메스 주식회사 | Apparatus for treating a substrate |
| US10490426B2 (en) | 2014-08-26 | 2019-11-26 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
| US10283384B2 (en) * | 2015-04-27 | 2019-05-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for etching etch layer and wafer etching apparatus |
| JP6306540B2 (en) * | 2015-06-19 | 2018-04-04 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
| CA3011900A1 (en) * | 2016-02-17 | 2017-08-24 | Seattle Genetics, Inc. | Bcma antibodies and use of same to treat cancer and immunological disorders |
| JP6653608B2 (en) | 2016-03-29 | 2020-02-26 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and substrate processing method |
| JP7130510B2 (en) * | 2018-09-21 | 2022-09-05 | 株式会社Ｓｃｒｅｅｎホールディングス | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
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| JPH0342828A (en) * | 1989-07-11 | 1991-02-25 | Mitsubishi Electric Corp | Method and device for treating semiconductor wafer |
| JPH07161674A (en) * | 1993-12-08 | 1995-06-23 | Mitsubishi Electric Corp | Device and method for processing semiconductor wafer |
| JPH08236497A (en) * | 1995-03-01 | 1996-09-13 | Mitsubishi Electric Corp | Method for cleaning and drying semiconductor wafer and apparatus therefor |
| JPH09162153A (en) * | 1995-12-13 | 1997-06-20 | Sony Corp | Method for treating substrate surface with liquid and system for treating substrate with liquid |
| JPH09199469A (en) * | 1996-01-23 | 1997-07-31 | Sony Corp | Chemical processing method and device |
| JP3395616B2 (en) * | 1997-11-20 | 2003-04-14 | 株式会社デンソー | Method and apparatus for etching semiconductor wafer |
| KR100292953B1 (en) * | 1998-06-23 | 2001-11-30 | 윤종용 | Etching apparatus for manufacturing semiconductor device and etching method using same |
| JP2002280339A (en) * | 2001-03-21 | 2002-09-27 | Dainippon Screen Mfg Co Ltd | Method of processing substrate, and apparatus thereof |
| JP2005079212A (en) * | 2003-08-29 | 2005-03-24 | Trecenti Technologies Inc | Semiconductor manufacturing equipment, and method for manufacturing semiconductor device |
| JP2008066400A (en) * | 2006-09-05 | 2008-03-21 | Dainippon Screen Mfg Co Ltd | Apparatus and method for processing substrate |
| JP2008235333A (en) * | 2007-03-16 | 2008-10-02 | Toshiba Corp | Semiconductor manufacturing apparatus |
-
2012
- 2012-11-05 JP JP2012243596A patent/JP6061378B2/en not_active Expired - Fee Related
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2013
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| TWI667706B (en) * | 2017-03-27 | 2019-08-01 | 日商斯庫林集團股份有限公司 | Substrate processing method and substrate processing apparatus |
| CN112640058A (en) * | 2018-09-06 | 2021-04-09 | 株式会社荏原制作所 | Substrate processing apparatus |
| TWI835839B (en) * | 2018-09-06 | 2024-03-21 | 日商荏原製作所股份有限公司 | Substrate processing equipment |
| US12020954B2 (en) | 2018-09-06 | 2024-06-25 | Ebara Corporation | Substrate processing apparatus |
Also Published As
| Publication number | Publication date |
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| WO2014069079A1 (en) | 2014-05-08 |
| TWI539514B (en) | 2016-06-21 |
| JP2014093449A (en) | 2014-05-19 |
| JP6061378B2 (en) | 2017-01-18 |
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