TW201416470A - Vapor deposition device, vapor deposition method, organic electroluminescence display, and organic electroluminescence lighting device - Google Patents
Vapor deposition device, vapor deposition method, organic electroluminescence display, and organic electroluminescence lighting device Download PDFInfo
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 39
- 238000005401 electroluminescence Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 title description 17
- 239000000463 material Substances 0.000 claims abstract description 129
- 239000000758 substrate Substances 0.000 claims abstract description 128
- 238000012545 processing Methods 0.000 claims abstract description 49
- 239000011368 organic material Substances 0.000 claims abstract description 27
- 238000001947 vapour-phase growth Methods 0.000 claims description 60
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 4
- 238000011144 upstream manufacturing Methods 0.000 abstract description 2
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- 230000032258 transport Effects 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 16
- 239000012044 organic layer Substances 0.000 description 15
- 230000005525 hole transport Effects 0.000 description 12
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- 238000005520 cutting process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- CECAIMUJVYQLKA-UHFFFAOYSA-N iridium 1-phenylisoquinoline Chemical compound [Ir].C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 CECAIMUJVYQLKA-UHFFFAOYSA-N 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
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- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Abstract
Description
本發明所揭示的實施態樣，係關於一種汽相沉積裝置、汽相沉積方法、有機電致發光顯示器以及有機電致發光照明裝置。 The disclosed embodiments relate to a vapor phase deposition apparatus, a vapor phase deposition method, an organic electroluminescence display, and an organic electroluminescence illumination device.
近年來，關於成為次世代主流的平板顯示器，使用了以有機材料發光的有機電致發光(EL：Electro-Luminescence)元件的有機電致發光顯示器受到注目。 In recent years, an organic electroluminescence display using an organic electroluminescence (EL: Electro-Luminescence) element that emits light of an organic material has been attracting attention as a flat panel display that has become the mainstream of the next generation.
有機電致發光顯示器，由於不需要自發光型背光源，故薄型化以及輕量化比較容易，且在視野角度、解析度、對比、反應速度、消耗電力、可撓性等的面向上也非常優異。 Since the organic electroluminescence display does not require a self-luminous backlight, it is easy to be thinner and lighter, and is excellent in terms of viewing angle, resolution, contrast, reaction speed, power consumption, flexibility, and the like. .
有機電致發光元件形成：在透明基板上將有機層以陽極(anode)以及陰極(cathode)夾住的構造。當對有機電致發光元件的陽極以及陰極施加電壓時，電洞(hole)從陽極注入有機層，電子從陰極注入有機層。所注入的電洞以及電子在有機層再結合而將發光層激發，當從該激發狀態再次回到基態時便產生光。 The organic electroluminescence element is formed by sandwiching an organic layer with an anode and a cathode on a transparent substrate. When a voltage is applied to the anode and the cathode of the organic electroluminescent element, a hole is injected from the anode into the organic layer, and electrons are injected from the cathode into the organic layer. The injected holes and electrons are recombined in the organic layer to excite the luminescent layer, and light is generated when returning to the ground state from the excited state.
在有機電致發光顯示器中，作為顯示全彩影像用的發光方式的其中1種，在透明基板上並排配置R(紅色)、G(綠色)、B(藍色)的3原色畫素的並置方式，已為人所習知。該並置方式，係在基板上分別塗布R、G、B的各色發光層。關於分別塗布各色發光層的成膜方法，遮罩汽相沉積法為現在的主流(參照例如專利文獻1)。 In an organic electroluminescence display, as one of the light-emitting methods for displaying full-color images, juxtaposition of three primary color pixels of R (red), G (green), and B (blue) is arranged side by side on a transparent substrate. The way is already well known. In this juxtaposition mode, light-emitting layers of respective colors of R, G, and B are applied to the substrate. Regarding the film formation method of applying the respective color light-emitting layers, the mask vapor deposition method is currently the mainstream (see, for example, Patent Document 1).
遮罩汽相沉積法，將在對應基板上欲附著成膜材料之部位的位置開孔的蔭蔽遮罩配置在基板之前，並通過蔭蔽遮罩的開口部使成膜材料汽相沉積。在上述並置方式的情況下，由於R、G、B的各色發光層的圖案相同，故藉由使同一蔭蔽遮罩的位置與基板平行移動，便可利用汽相沉積法分別塗布R、G、B的各色發光層。 In the mask vapor deposition method, a shadow mask which is opened at a position on a corresponding substrate on which a film forming material is to be attached is disposed in front of the substrate, and the film forming material is vapor-deposited through the opening portion of the shadow mask. In the case of the juxtaposition method described above, since the patterns of the respective light-emitting layers of R, G, and B are the same, by sequentially moving the position of the same shading mask in parallel with the substrate, R, G, and V, G, respectively can be applied by vapor deposition. Each color luminescent layer of B.
【專利文獻】 [Patent Literature]
【專利文獻1】日本特開2005-325425號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-325425
然而，在遮罩汽相沉積法中，由於蔭蔽遮罩的開口在遮罩整體面積中所占的比例很小，而蒸發物質的大部分(一般在95%以上)會附著於遮罩，故材料的利用效率較差。由於R、G、B的各色發光層所使用的有機材料的價格頗高，故其成為阻礙有機電致發光顯示器或有機電致發光照明裝置的大型化以及量產效率的主要原因。 However, in the mask vapor deposition method, since the opening of the shadow mask accounts for a small proportion of the entire area of the mask, most of the evaporated material (generally 95% or more) adheres to the mask, so The utilization efficiency of materials is poor. Since the organic material used for each of the light-emitting layers of R, G, and B is relatively expensive, it is a factor that hinders the enlargement of the organic electroluminescence display or the organic electroluminescence illumination device and the mass production efficiency.
實施態樣的其中一態樣之目的在於提供一種可使有機材料的利用效率提高的汽相沉積裝置、汽相沉積方法、有機電致發光顯示器以及有機電致發光照明裝置。 One of the aspects of the embodiment is to provide a vapor phase deposition apparatus, a vapor phase deposition method, an organic electroluminescence display, and an organic electroluminescence illumination device which can improve the utilization efficiency of an organic material.
實施態樣的其中一態樣之汽相沉積裝置包含：處理室，其收納作為處理對象的基板；汽相沉積部，其噴出含有形成發光層之有機材料的氣體；以及移動部，其在該處理室內，使該基板的被處理面相對於該汽相沉積部朝既定方向相對性移動；該汽相沉積部包含：第1汽相沉積部，其向移動之該基板的被處理面噴出在該有機材料中之含有主體材料的氣體，使第1有機膜成面狀汽相沉積於該被處理面上；以及第2汽相沉積部，其配置在該第1汽相沉積部的前段或後段，向移動之該基板的被處理面噴出在該有機材料中之含有客體材料的氣體，使第2有機膜成線狀汽相沉積於該被處理面上。 A vapor phase deposition apparatus according to one aspect of the embodiment includes: a processing chamber that houses a substrate to be processed; a vapor deposition portion that ejects a gas containing an organic material forming the light emitting layer; and a moving portion in which a processing chamber, wherein the processed surface of the substrate is relatively moved in a predetermined direction with respect to the vapor deposition portion; the vapor deposition portion includes: a first vapor deposition portion that is ejected toward the processed surface of the substrate a gas containing a host material in the organic material, wherein the first organic film is vapor-deposited on the surface to be processed; and a second vapor deposition portion disposed in the front or rear portion of the first vapor deposition portion The gas containing the guest material in the organic material is ejected onto the surface to be processed of the substrate to be moved, and the second organic film is vapor-deposited on the surface to be processed.
根據實施態樣的其中一態樣，便可提供出一種可使有機材料的利用效率提高的汽相沉積裝置、汽相沉積方法、有機電致發光顯示器以及照明裝置。 According to one aspect of the embodiment, a vapor phase deposition apparatus, a vapor phase deposition method, an organic electroluminescence display, and a lighting apparatus which can improve the utilization efficiency of an organic material can be provided.
1‧‧‧基板處理系統 1‧‧‧Substrate processing system
2、2A‧‧‧汽相沉積裝置 2, 2A‧‧‧ vapor phase deposition device
10‧‧‧處理室 10‧‧‧Processing room
11‧‧‧閘閥 11‧‧‧ gate valve
12‧‧‧開口 12‧‧‧ openings
13‧‧‧排氣口 13‧‧‧Exhaust port
20‧‧‧移動機構 20‧‧‧Mobile agencies
21‧‧‧平台 21‧‧‧ platform
22‧‧‧掃描部 22‧‧‧ Scanning Department
30‧‧‧蒸發機構 30‧‧‧Evaporation mechanism
31a~31h‧‧‧蒸發源 31a~31h‧‧‧ evaporation source
32a~32h‧‧‧電阻發熱元件 32a~32h‧‧‧Resistive heating element
33‧‧‧加熱器電源部 33‧‧‧Heating Power Supply Department
34‧‧‧載體氣體供給機構 34‧‧‧Carrier gas supply mechanism
35‧‧‧載體氣體供給源 35‧‧‧ Carrier gas supply source
36a~36h‧‧‧氣體管 36a~36h‧‧‧ gas pipe
37a~37h‧‧‧開閉閥 37a~37h‧‧‧Opening and closing valve
38a~38h‧‧‧質量流量控制部 38a~38h‧‧‧Quality Flow Control Department
40、40A‧‧‧原料氣體噴出部 40, 40A‧‧‧ Raw material gas injection department
41a~41i‧‧‧噴嘴 41a~41i‧‧‧ nozzle
42a42h‧‧‧氣體管 42a42h‧‧‧ gas pipe
43a43h‧‧‧開閉閥 43a43h‧‧‧Opening and closing valve
44a~44i‧‧‧噴出口 44a~44i‧‧‧Spray outlet
45‧‧‧隔壁板 45‧‧‧ partition board
50‧‧‧控制部 50‧‧‧Control Department
60‧‧‧堤板 60‧‧‧ dyke
Q‧‧‧區域 Q‧‧‧Area
W‧‧‧線寬 W‧‧‧Line width
G‧‧‧基板 G‧‧‧Substrate
E-E、F-F‧‧‧剖面線 E-E, F-F‧‧‧ hatching
DS‧‧‧距離 DS‧‧‧Distance
DL‧‧‧距離 DL‧‧‧ distance
TM‧‧‧搬運室 TM‧‧・Transport room
CM‧‧‧前處理室 CM‧‧‧Pre-treatment room
LLM‧‧‧負載鎖定室 LLM‧‧‧Load Locking Room
PM1~PM4‧‧‧處理模組 PM1~PM4‧‧‧Processing Module
Arm‧‧‧搬運臂 Arm‧‧‧Transport arm
X、Y、Z‧‧‧軸 X, Y, Z‧‧‧ axes
HIL‧‧‧電洞注入層 HIL‧‧‧ hole injection layer
HTL‧‧‧電洞輸送層 HTL‧‧‧ hole transport layer
EMHF‧‧‧發光層的主體膜 The main film of the EMHF‧‧ luminescent layer
EMLr‧‧‧發光層 EMLr‧‧‧Lighting layer
EMLg‧‧‧發光層 EMLg‧‧‧Lighting layer
EMLb‧‧‧發光層 EMLb‧‧‧Lighting layer
ETL‧‧‧電子輸送層 ETL‧‧‧Electronic transport layer
EIL‧‧‧電子注入層 EIL‧‧‧electron injection layer
P‧‧‧間隔 P‧‧‧ interval
K1~K3‧‧‧口徑 K1~K3‧‧‧ caliber
圖1係表示第1實施態樣之基板處理系統的構造圖。 Fig. 1 is a structural view showing a substrate processing system according to a first embodiment.
圖2係表示第1實施態樣之有機電致發光彩色顯示器的裝置構造的一例的示意剖面圖。 2 is a schematic cross-sectional view showing an example of an apparatus structure of an organic electroluminescence color display of the first embodiment.
圖3係表示圖1所示之汽相沉積裝置的構造圖。 Fig. 3 is a view showing the configuration of the vapor phase deposition apparatus shown in Fig. 1.
圖4係表示圖1所示之汽相沉積裝置的噴嘴的構造以及配置圖。 Fig. 4 is a view showing the configuration and arrangement of nozzles of the vapor phase deposition apparatus shown in Fig. 1.
圖5A係表示在玻璃基板上形成RGB發光層的態樣的俯視圖。 Fig. 5A is a plan view showing a state in which an RGB light-emitting layer is formed on a glass substrate.
圖5B係圖5A所示之區域Q的擴大圖。 Fig. 5B is an enlarged view of the region Q shown in Fig. 5A.
圖6係表示汽相沉積裝置形成有機層的態樣圖。 Fig. 6 is a view showing a state in which an organic layer is formed by a vapor phase deposition device.
圖7A係圖6所示之E-E線的示意剖面圖。 Fig. 7A is a schematic cross-sectional view taken along line E-E of Fig. 6.
圖7B係利用擴散形成R發光層、G發光層以及B發光層的狀態的E-E線的示意剖面圖。 7B is a schematic cross-sectional view of an E-E line in a state in which an R light-emitting layer, a G light-emitting layer, and a B light-emitting layer are formed by diffusion.
圖8係表示利用多孔型的噴嘴所形成的膜層形狀的一例的圖式。 Fig. 8 is a view showing an example of a shape of a film layer formed by a porous nozzle.
圖9係表示RGB發光層的形狀例的圖式。 Fig. 9 is a view showing an example of the shape of an RGB light-emitting layer.
圖10係表示被動矩陣方式的構造例的圖式。 Fig. 10 is a view showing a configuration example of a passive matrix method.
圖11係表示第2實施態樣之汽相沉積裝置形成有機層的態樣圖。 Fig. 11 is a view showing a state in which an organic layer is formed by a vapor phase deposition apparatus of a second embodiment.
圖12A係圖11所示之F-F線的示意剖面圖。 Fig. 12A is a schematic cross-sectional view taken along line F-F of Fig. 11.
圖12B係利用擴散形成R發光層、G發光層以及B發光層的狀態的F-F線的示意剖面圖。 12B is a schematic cross-sectional view of the F-F line in a state in which the R light-emitting layer, the G light-emitting layer, and the B light-emitting layer are formed by diffusion.
圖13係表示第2實施態樣之有機電致發光彩色顯示器的裝置構造的一例的示意剖面圖。 Fig. 13 is a schematic cross-sectional view showing an example of an apparatus structure of an organic electroluminescence color display of a second embodiment.
圖14係表示另一實施態樣之有機電致發光彩色顯示器的裝置構造的一例的示意剖面圖。 Fig. 14 is a schematic cross-sectional view showing an example of a device structure of an organic electroluminescence color display of another embodiment.
以下，參照所附圖式，詳細說明本案所揭示的汽相沉積裝置、汽相沉積方法、有機電致發光顯示器以及有機電致發光照明裝置的實施態樣。另外，本發明並未因為以下所示的實施態樣受到限定。例如，在以下內容中，雖係針對形成有機電致發光顯示器或有機電致發光照明裝置的有機層的實施例進行說明，惟藉由汽相沉積裝置以及汽相沉積方法所製造的裝置，並非僅限於顯示器或照明裝置。 Hereinafter, embodiments of the vapor phase deposition apparatus, the vapor phase deposition method, the organic electroluminescence display, and the organic electroluminescence illumination apparatus disclosed in the present specification will be described in detail with reference to the accompanying drawings. Further, the present invention is not limited by the embodiments shown below. For example, in the following, although an embodiment of an organic layer for forming an organic electroluminescence display or an organic electroluminescence illumination device is described, a device manufactured by a vapor deposition device and a vapor deposition method is not Limited to displays or lighting fixtures.
〔1.第1實施態樣〕 [1. First embodiment]
〔1.1.基板處理系統的構造〕 [1.1. Structure of Substrate Processing System]
首先，說明第1實施態樣的基板處理系統。圖1係表示第1實施態樣的基板處理系統的構造圖。如圖1所示的，第1實施態樣的基板處理系統1，係具有複數個處理容器的群集型裝置，包含負載鎖定室LLM、搬運室TM、前處理室CM以及4個處理模組PM1~PM4。 First, a substrate processing system according to the first embodiment will be described. Fig. 1 is a structural view showing a substrate processing system according to a first embodiment. As shown in FIG. 1, the substrate processing system 1 of the first embodiment is a cluster type device having a plurality of processing containers, including a load lock chamber LLM, a transfer chamber TM, a pretreatment chamber CM, and four processing modules PM1. ~PM4.
負載鎖定室LLM，為了將從大氣環境搬運過來的玻璃基板(以下記載為基板G)搬運到真空度較高的處理模組PM，而將內部保持在減壓狀態。在基板G上，預先形成銦錫氧化物(ITO：Indium Tin Oxide)作為陽極。基板G，被搬運室TM的搬運臂Arm搬運到前處理室CM內，將ITO表面清潔之後，搬運到處理模組PM1內。 The load lock chamber LLM transports the glass substrate (hereinafter referred to as the substrate G) conveyed from the atmosphere to the processing module PM having a high degree of vacuum, and maintains the inside in a reduced pressure state. On the substrate G, indium tin oxide (ITO: Indium Tin Oxide) was formed in advance as an anode. The substrate G is transported into the pretreatment chamber CM by the transfer arm Arm of the transfer chamber TM, and the ITO surface is cleaned and then transported into the processing module PM1.
在處理模組PM1中，配置了氣流型的汽相沉積裝置2，在透明陽極ITO上連續形成後述的複數層有機膜。像這樣形成了有機層的基板G，被搬運到處理模組PM4內，利用濺鍍在有機層上形成陰極層(金屬電極)。 In the processing module PM1, a gas phase vapor deposition apparatus 2 is disposed, and a plurality of organic membranes to be described later are continuously formed on the transparent anode ITO. The substrate G on which the organic layer is formed as described above is transported into the processing module PM4, and a cathode layer (metal electrode) is formed on the organic layer by sputtering.
然後，基板G，被搬運到處理模組PM2內，利用蝕刻形成配線用的圖案之後，再次在處理模組PM4內利用濺鍍在蝕刻部分上形成金屬配線。然後，基板G最後被搬運到處理模組PM3內，利用CVD(Chemical Vapor Deposition：化學氣相沉積法)形成封裝有機層的封裝膜。 Then, the substrate G is transported into the processing module PM2, and a wiring pattern is formed by etching, and then metal wiring is formed on the etching portion by sputtering in the processing module PM4. Then, the substrate G is finally transferred into the processing module PM3, and a package film for encapsulating the organic layer is formed by CVD (Chemical Vapor Deposition).
圖2係表示利用基板處理系統1所製造的有機電致發光彩色顯示器的裝置構造的一例的示意剖面圖。如圖2所示的，有機電致發光彩色顯示器，具有在基板G上堆疊形成透明陽極ITO、電洞注入層HIL、電洞輸送層HTL、發光層EML、電子輸送層ETL、電子注入層EIL以及陰極(cathode)的裝置構造。 2 is a schematic cross-sectional view showing an example of an apparatus structure of an organic electroluminescence color display manufactured by the substrate processing system 1. As shown in FIG. 2, the organic electroluminescent color display has a transparent anode ITO, a hole injection layer HIL, a hole transport layer HTL, a light emitting layer EML, an electron transport layer ETL, and an electron injection layer EIL stacked on a substrate G. And a device configuration of a cathode.
第1實施態樣之發光層EML，包含R(紅)發光層REL、G(綠)發光層GEL、B(藍)發光層BEL(以下有時會統稱為RGB發光層)。該等RGB發光層，如後所述的，係在由主體材料所形成的薄膜(以下記載為主體膜)上形成由RGB發光層用的各客體材料所形成的薄膜，並使客體材料擴散於主體膜中所形成。 The light-emitting layer EML of the first embodiment includes an R (red) light-emitting layer REL, a G (green) light-emitting layer GEL, and a B (blue) light-emitting layer BEL (hereinafter collectively referred to as an RGB light-emitting layer). As described later, the RGB light-emitting layer forms a thin film formed of each guest material for the RGB light-emitting layer on a thin film (hereinafter referred to as a main film) formed of a host material, and diffuses the guest material. Formed in the bulk film.
主體材料，係在發光層中負責載體輸送的材料，例如，Alq3(螢光材料主體)、CBP、m-CP、m-CBP(燐光材料主體)等。相關主體材料，例如，可根據HOMO-LUMO(Highest Occupied Molecular Orbital-Lowest Unoccupied Molecular Orbital；最高佔據分子軌域-最低未占分子軌域)位準、能隙、與客體材料的適合度適當選擇之。另外，客體(摻雜物)材料，係在發光層中負責發光的材料，R發光層REL用的客體材料，例如，DCM、DCM2、DCJTB(紅色螢光材料)、Ir(piq)3、(btp)2Ir(acac)(紅色燐光材料)等，G發光層GEL用的客體材料，例如，Coumarin6(綠色螢光材 料)、Ir(ppy)3、(ppy)2Ir(acac)(綠色燐光材料)等，B發光層BEL用的客體材料，例如，TBP(藍色螢光材料)、Ir(Fppy)3、FIrpic(藍色燐光材料)等。另外，主體材料以及客體材料，並非僅限於上述材料，亦可考慮發光特性等而使用各式各樣的材料。 The host material is a material responsible for carrier transport in the light-emitting layer, for example, Alq3 (fluorescent material host), CBP, m-CP, m-CBP (twisten material body), and the like. The relevant host material, for example, may be appropriately selected according to the HOMO-LUMO (Highest Occupied Molecular Orbital-Lowest Unoccupied Molecular Orbital) level, the energy gap, and the suitability of the guest material. . In addition, the guest (dopant) material is a material responsible for light emission in the light-emitting layer, and a guest material for the R light-emitting layer REL, for example, DCM, DCM2, DCJTB (red fluorescent material), Ir(piq) 3, ( Btp) 2Ir(acac) (red luminescent material), etc., guest material for G luminescent layer GEL, for example, Coumarin 6 (green fluorescent material) Material, Ir(ppy)3, (ppy)2Ir(acac) (green luminescent material), etc., guest material for B luminescent layer BEL, for example, TBP (blue fluorescent material), Ir(Fppy) 3, FIrpic (blue neon material) and so on. Further, the host material and the guest material are not limited to the above materials, and various materials may be used in consideration of luminescent properties and the like.
配置在處理模組PM1內的汽相沉積裝置2，在1個處理室內，以1次的汽相沉積處理同時形成該等電洞注入層HIL、電洞輸送層HTL、發光層EML、電子輸送層ETL以及電子注入層EIL共5層。 The vapor phase deposition device 2 disposed in the processing module PM1 simultaneously forms the hole injection layer HIL, the hole transport layer HTL, the light emitting layer EML, and the electron transport in one processing chamber by one vapor phase deposition treatment. The layer ETL and the electron injection layer EIL have a total of 5 layers.
〔1.2.汽相沉積裝置的構造〕 [1.2. Structure of vapor phase deposition device]
圖3係表示汽相沉積裝置2的構造圖。如圖3所示的，汽相沉積裝置2具備：處理室10、移動機構20、蒸發機構30、原料氣體噴出部40、控制部50，依序形成上述的電洞注入層HIL、電洞輸送層HTL、發光層EML、電子輸送層ETL、電子注入層EIL(參照圖2)。 Fig. 3 is a view showing the configuration of the vapor phase deposition device 2. As shown in FIG. 3, the vapor deposition apparatus 2 includes a processing chamber 10, a moving mechanism 20, an evaporation mechanism 30, a material gas ejection unit 40, and a control unit 50, which sequentially form the above-described hole injection layer HIL and hole transportation. Layer HTL, light-emitting layer EML, electron transport layer ETL, and electron injection layer EIL (see FIG. 2).
在處理室10的側壁，形成了利用閘閥11開閉的基板搬入搬出用的開口12，可將被處理基板亦即基板G送入或送出處理室10。另外，處理室10，透過形成於其側壁或底面的排氣口13與真空泵等的排氣裝置(圖中未顯示)連接，可使處理室10內部減壓。另外，閘閥11或排氣裝置，例如，被控制部50所控制。 In the side wall of the processing chamber 10, an opening 12 for loading and unloading the substrate by the gate valve 11 is formed, and the substrate G, which is a substrate to be processed, can be fed into or out of the processing chamber 10. Further, the processing chamber 10 is connected to an exhaust device (not shown) such as a vacuum pump through an exhaust port 13 formed on the side wall or the bottom surface thereof, and the inside of the processing chamber 10 can be decompressed. Further, the gate valve 11 or the exhaust device is controlled by the control unit 50, for example.
移動機構20，被控制部50所控制，在處理室10內使基板G朝水平單一方向(X方向)以一定速度移動。該移動機構20具有：將基板G的被處理面以朝向下方的狀態保持的平台21；以及與該平台21結合並使平台21朝X方向滑行移動的掃描部22。 The moving mechanism 20 is controlled by the control unit 50 to move the substrate G at a constant speed in a horizontal single direction (X direction) in the processing chamber 10. The moving mechanism 20 has a stage 21 that holds the surface to be processed of the substrate G in a downward direction, and a scanning unit 22 that is coupled to the stage 21 to slide the stage 21 in the X direction.
在平台21中，埋入了利用靜電吸附力以可吸附脫離的方式保持基板G的靜電夾頭(圖中未顯示)，該靜電夾頭，透過被控制部50所控制的開關與高壓的直流電源(圖中未顯示)電連接。另外，在平台21的內部形成了媒體通路，控制部50控制熱媒體循環裝置(圖中未顯示)，對平台21內部的媒體 通路循環供給既定溫度的熱媒體(例如冷媒)，藉此將基板G調整到既定溫度。 In the stage 21, an electrostatic chuck (not shown) that holds the substrate G by electrostatic adsorption force to be adsorbed and detached is embedded, and the electrostatic chuck passes through a switch controlled by the control unit 50 and a high-voltage direct current. The power supply (not shown) is electrically connected. In addition, a media path is formed inside the platform 21, and the control unit 50 controls the thermal media circulation device (not shown) for the media inside the platform 21. The passage circulates a heat medium (for example, a refrigerant) of a predetermined temperature, thereby adjusting the substrate G to a predetermined temperature.
蒸發機構30，在處理室10之外，具有對應形成於基板G上的薄膜的種類的個數的蒸發源31a~31g(以下有時會統稱為蒸發源31)。各蒸發源31，在形成於容器內的坩堝之中，將有機材料加熱、蒸發而產生原料氣體。 The evaporation mechanism 30 has an evaporation source 31a to 31g (hereinafter collectively referred to as an evaporation source 31) corresponding to the type of the film formed on the substrate G, in addition to the processing chamber 10. Each of the evaporation sources 31 heats and evaporates the organic material in the crucible formed in the container to generate a material gas.
具體而言，蒸發源31a，將成為電洞注入層HIL的原料的有機物質的成膜材料加熱、蒸發而產生HIL原料氣體；蒸發源31b，將成為電洞輸送層HTL的原料的有機物質的成膜材料加熱、蒸發而產生HTL原料氣體；蒸發源31c，將成為發光層EML的主體材料的有機物質的成膜材料加熱、蒸發而產生EML原料氣體。 Specifically, the evaporation source 31a heats and evaporates the film forming material of the organic substance which is the raw material of the hole injection layer HIL to generate the HIL source gas, and the evaporation source 31b forms the organic substance which is the raw material of the hole transport layer HTL. The film forming material is heated and evaporated to generate an HTL material gas, and the evaporation source 31c heats and evaporates the film forming material of the organic substance which is the host material of the light emitting layer EML to generate an EML material gas.
另外，蒸發源31d，將成為R發光層REL的客體材料的有機物質的成膜材料加熱、蒸發而產生EMLr原料氣體；蒸發源31e，將成為G發光層GEL的客體材料的有機物質的成膜材料加熱、蒸發而產生EMLg原料氣體；蒸發源31f，將成為B發光層BEL的客體材料的有機物質的成膜材料加熱、蒸發而產生EMLb原料氣體。 In addition, the evaporation source 31d heats and evaporates the film forming material of the organic material which is the guest material of the R light-emitting layer REL to generate the EMLr source gas, and the evaporation source 31e forms the film of the organic substance which becomes the guest material of the G light-emitting layer GEL. The material is heated and evaporated to generate an EMLg source gas; the evaporation source 31f heats and evaporates the film forming material of the organic substance which becomes the guest material of the B light-emitting layer BEL to generate an EMLb source gas.
另外，蒸發源31g，將成為電子輸送層ETL的原料的有機物質的成膜材料加熱、蒸發而產生ETL原料氣體；蒸發源31h，將成為電子注入層EIL的原料的有機物質的成膜材料加熱、蒸發而產生EIL原料氣體。 In addition, the evaporation source 31g heats and evaporates the film formation material of the organic material which is the raw material of the electron transport layer ETL to generate the ETL material gas, and the evaporation source 31h heats the film formation material of the organic substance which is the raw material of the electron injection layer EIL. Evaporation produces EIL material gas.
各蒸發源31a~31h，例如具備由高熔點材料所構成的電阻發熱元件32a~32h(以下統稱為電阻發熱元件32)作為將各有機材料加熱用的加熱器。加熱器電源部33，對各電阻發熱元件32個別供給電流，以個別控制各蒸發源31的加熱溫度(例如200℃~500℃)。 Each of the evaporation sources 31a to 31h includes, for example, resistance heating elements 32a to 32h (hereinafter collectively referred to as resistance heating elements 32) composed of a high melting point material as a heater for heating each organic material. The heater power supply unit 33 individually supplies current to each of the resistance heating elements 32 to individually control the heating temperature (for example, 200 to 500 ° C) of each of the evaporation sources 31.
蒸發機構30，具備將在各蒸發源31所產生的原料氣體分別與載體氣體混合並搬運到原料氣體噴出部40用的載體氣體供給機構34。該載體氣體供 給機構34具備：載體氣體供給源35、氣體管36a~36h(以下有時會統稱為氣體管36)、開閉閥37a~37h(以下有時會統稱為開閉閥37)、質量流量控制部38a~38h(以下有時會統稱為MFC38)。 The evaporation mechanism 30 includes a carrier gas supply mechanism 34 for mixing the material gases generated in the respective evaporation sources 31 with the carrier gas and transporting them to the material gas discharge unit 40. The carrier gas is supplied The supply mechanism 34 includes a carrier gas supply source 35, gas tubes 36a to 36h (hereinafter collectively referred to as gas tubes 36), on-off valves 37a to 37h (hereinafter collectively referred to as an on-off valve 37), and a mass flow control unit 38a. ~38h (hereinafter sometimes referred to as MFC38).
載體氣體供給源35，將惰性氣體(例如氬氣、氦氣、氪體或是氮氣)個別地送出到各氣體管36的基端部作為載體氣體。在各氣體管36的中途部位分別配置了開閉閥37以及MFC38。 The carrier gas supply source 35 individually sends an inert gas (for example, argon gas, helium gas, hydrazine gas or nitrogen gas) to the proximal end portion of each gas tube 36 as a carrier gas. The opening and closing valve 37 and the MFC 38 are disposed in the middle of each gas pipe 36.
各開閉閥37，藉由控制部50的控制而各自獨立開閉(導通/切斷)。另外，各MFC38，利用控制部50控制流過對應的氣體管36的載體氣體的壓力或流量。利用該等MFC38以及開閉閥37，進行載體氣體的導通/切斷，以及載體氣體的壓力或流量的控制。 Each of the on-off valves 37 is independently opened and closed (conducted/disconnected) by the control of the control unit 50. Further, each MFC 38 controls the pressure or flow rate of the carrier gas flowing through the corresponding gas pipe 36 by the control unit 50. The MFC 38 and the on-off valve 37 are used to control the conduction/cutting of the carrier gas and the pressure or flow rate of the carrier gas.
各氣體管36的前端部，分別與對應的蒸發源31連接，利用開閉閥37以及MFC38，進行對蒸發源31的載體氣體的壓力以及流量的控制或載體氣體的供給/停止。 The front end portions of the respective gas tubes 36 are connected to the corresponding evaporation source 31, and the pressure and the flow rate of the carrier gas of the evaporation source 31 or the supply/stop of the carrier gas are performed by the opening and closing valve 37 and the MFC 38.
原料氣體噴出部40，在處理室10內，具備分別與蒸發源31a~31h對應的噴嘴41a~41h(以下有時會統稱為噴嘴41)，將從各蒸發源31所接收的各原料氣體，向藉由移動機構20移動的基板G噴出。 The material gas ejecting unit 40 includes nozzles 41a to 41h (hereinafter collectively referred to as nozzles 41) corresponding to the evaporation sources 31a to 31h in the processing chamber 10, and the respective material gases received from the respective evaporation sources 31 are The substrate G moved by the moving mechanism 20 is ejected.
噴嘴41a~41h均為長方型的噴嘴，在處理室10內朝基板移動方向(X方向)並排配置成一列。該等噴嘴41a~41h，各自朝與基板移動方向(X方向)正交的方向(Y方向)伸長而延伸，並從在各自的頂面上所形成的噴出口將原料氣體向上方噴出。 The nozzles 41a to 41h are rectangular nozzles, and are arranged in a row in the processing chamber 10 in the substrate moving direction (X direction). Each of the nozzles 41a to 41h extends in a direction (Y direction) orthogonal to the substrate moving direction (X direction), and ejects the material gas upward from the discharge ports formed on the respective top surfaces.
各噴嘴41a~41h，透過貫通處理室10的底壁的各氣體管42a~42h(以下有時會統稱為氣體管42)與各蒸發源31a~31h連接，而且，從移動機構20的汽相沉積掃描的起始位置開始在X方向上依序配置。然後，利用該等噴嘴41a~41h，在基板G上，分別噴出HIL原料氣體、HTL原料氣體、EML原料 氣體、EMLr原料氣體、EMLg原料氣體、EMLb原料氣體、ETL原料氣體、EIL原料氣體。另外，在各氣體管42a~42h的中途部位，分別配置了開閉閥43a~43h。 Each of the nozzles 41a to 41h is connected to each of the evaporation sources 31a to 31h through the gas tubes 42a to 42h (hereinafter collectively referred to as a gas tube 42) that penetrates the bottom wall of the processing chamber 10, and the vapor phase from the moving mechanism 20 The starting position of the deposition scan begins to be sequentially arranged in the X direction. Then, using the nozzles 41a to 41h, HIL material gas, HTL material gas, and EML material are ejected on the substrate G, respectively. Gas, EMLr source gas, EMLg source gas, EMLb source gas, ETL material gas, EIL material gas. Further, opening and closing valves 43a to 43h are disposed in the middle portions of the gas pipes 42a to 42h, respectively.
圖4係表示汽相沉積裝置2的噴嘴41a~41h的構造以及配置圖。如圖4所示的，噴嘴41a~41g，在其頂面上分別設有噴出口44a~44h。各噴出口44a~44h，形成對應所欲形成之薄膜的形狀，而且，配置在適當的距離，以對在汽相沉積過程中通過正上方的基板G形成各層薄膜。 Fig. 4 is a view showing the configuration and arrangement of the nozzles 41a to 41h of the vapor phase deposition device 2. As shown in Fig. 4, the nozzles 41a to 41g are provided with discharge ports 44a to 44h on the top surfaces thereof, respectively. Each of the discharge ports 44a to 44h is formed in a shape corresponding to the film to be formed, and is disposed at an appropriate distance to form a film of each layer through the substrate G directly above during vapor deposition.
具體而言，在噴嘴41a~41c、41g、41h的頂面上，形成了在其長邊方向(Y方向)上以狹縫狀延伸的噴出口44a~44c、44g、44h，該等噴出口44a~44c、44g、44h，分別配置在隔著適合對基板G形成面狀薄膜的較遠距離DL(例如10~20mm)的這般高度的位置。 Specifically, on the top surfaces of the nozzles 41a to 41c, 41g, and 41h, discharge ports 44a to 44c, 44g, and 44h extending in a slit shape in the longitudinal direction (Y direction) are formed, and the discharge ports are formed. 44a to 44c, 44g, and 44h are disposed at positions such as a long distance DL (for example, 10 to 20 mm) which is suitable for forming a planar film on the substrate G.
另一方面，在噴嘴41d~41f的頂面上，形成了在其長邊方向(Y方向)上隔著既定間隔排成一列(或複數列)的複數個噴出口44d~44f，該等噴出口44d~44f，分別配置在隔著適合對基板G形成線狀薄膜的較短距離DS(例如1mm以下)的這般高度的位置。 On the other hand, on the top surfaces of the nozzles 41d to 41f, a plurality of discharge ports 44d to 44f which are arranged in a row (or a plurality of rows) at predetermined intervals in the longitudinal direction (Y direction) are formed. The outlets 44d to 44f are disposed at positions such as a short distance DS (for example, 1 mm or less) suitable for forming a linear film on the substrate G.
圖5A，係表示利用汽相沉積裝置2在基板G上形成RGB發光層的態樣的俯視圖；圖5B，係圖5A所示之區域Q的放大圖，表示噴出口44d~44f與RGB發光層的形成圖案之間的關係。 5A is a plan view showing a state in which an RGB light-emitting layer is formed on a substrate G by a vapor deposition apparatus 2; and FIG. 5B is an enlarged view of a region Q shown in FIG. 5A, showing discharge ports 44d to 44f and an RGB light-emitting layer. The relationship between the formation of patterns.
如圖5A以及圖5B所示的，各噴嘴41d~41f，其各自的噴出口44d~44f相對於噴嘴長邊方向(Y方向)以既定間隔P配置成一列，另外，在噴出口44d~44f之間，在噴嘴長邊方向(Y方向)上，噴出口44d~44f彼此偏移P/3。 As shown in FIG. 5A and FIG. 5B, each of the nozzles 41d to 41f has its respective discharge ports 44d to 44f arranged in a line at a predetermined interval P with respect to the longitudinal direction of the nozzle (Y direction), and at the discharge ports 44d to 44f. In the longitudinal direction of the nozzle (Y direction), the discharge ports 44d to 44f are shifted from each other by P/3.
噴出口44d~44f的口徑K1~K3，可選定為相依於並置型的RGB發光層的各線寬W的數值。口徑K1~K3的範圍，例如，可設定為0.1~1W。例如 當W=100μm時，可設定為K1~K3=10~100μm。 The diameters K1 to K3 of the discharge ports 44d to 44f can be selected to be values corresponding to the respective line widths W of the RGB light-emitting layers of the juxtaposition type. The range of the apertures K1 to K3 can be set, for example, to 0.1 to 1 W. E.g When W = 100 μm, it can be set to K1 to K3 = 10 to 100 μm.
像這樣，噴出口44d~44f的口徑K1~K3形成微細的口徑，且以極接近的距離DS，向基板G的被處理面(以下有時會記載為基板被處理面)噴出原料氣體。因此，可抑制從噴出口44d~44f所噴出的原料氣體向四方，特別是基板移動方向(X方向)的擴散，進而以精度良好的方式形成RGB發光層。 In this way, the diameters K1 to K3 of the discharge ports 44d to 44f are formed into a fine diameter, and the raw material gas is discharged to the surface to be processed of the substrate G (hereinafter, referred to as a substrate-treated surface) at a very close distance DS. Therefore, it is possible to suppress the diffusion of the material gas discharged from the discharge ports 44d to 44f to the square, in particular, the substrate moving direction (X direction), and to form the RGB light-emitting layer with high precision.
相對於此，噴出口44a~44c、44g、44h，係廣角遠距離噴出型噴嘴，將原料氣體以較大較廣的角度向位於遠距離DL的基板被處理面噴出，故該等噴出之原料氣體會向四方，特別是基板移動方向(X方向)擴散。藉此，便可精度良好地形成電洞注入層HIL、電洞輸送層HTL、發光層的主體膜EMHF、電子輸送層ETL以及電子注入層EIL的面狀。 On the other hand, the discharge ports 44a to 44c, 44g, and 44h are wide-angle long-distance discharge nozzles, and the raw material gas is ejected toward the substrate-treated surface located at a long distance DL at a wide angle, so that the raw materials are ejected. The gas will diffuse in all directions, especially in the direction of substrate movement (X direction). Thereby, the surface of the hole injection layer HIL, the hole transport layer HTL, the main film EMHF of the light-emitting layer, the electron transport layer ETL, and the electron injection layer EIL can be formed with high precision.
另外，在隣接的噴嘴41a~41c、41g、41h之間，設置了從處理室10的底壁向垂直上方(Z方向)延伸到到超越噴嘴噴出口44a~44c、44g、44h的高度的隔壁板45(參照圖3以及圖4)，利用該隔壁板45，便可防止原料氣體侵入或混入到隣接的噴嘴側。 Further, between the adjacent nozzles 41a to 41c, 41g, and 41h, a partition wall extending from the bottom wall of the processing chamber 10 vertically upward (Z direction) to the height beyond the nozzle discharge ports 44a to 44c, 44g, and 44h is provided. The plate 45 (see FIGS. 3 and 4) can prevent the material gas from entering or adjoining the adjacent nozzle side by the partition plate 45.
〔1.3.利用汽相沉積裝置形成有機層〕 [1.3. Formation of organic layer by vapor deposition apparatus]
接著，說明如何利用汽相沉積裝置2形成有機層。圖6係表示利用汽相沉積裝置2形成有機層的態樣圖。 Next, how the organic layer is formed using the vapor phase deposition device 2 will be explained. Fig. 6 is a view showing a state in which an organic layer is formed by the vapor deposition apparatus 2.
當打開閘閥11並利用外部搬運裝置(圖中未顯示)將被處理對象亦即基板G搬入處理室10之中時，控制部50便控制移動機構20使平台21接近搬入/搬出口以進行基板G的裝載。在基板G的裝載完成之後，控制部50使閘閥11關閉，並利用排氣裝置將處理室10的室內減壓到既定的真空壓力。另外，在搬入汽相沉積裝置2的基板G的被處理面上，利用其他成膜裝置在前置步驟形成了陽極(ITO)。 When the gate valve 11 is opened and the substrate G to be processed, that is, the substrate G, is carried into the processing chamber 10 by an external transfer device (not shown), the control unit 50 controls the moving mechanism 20 to bring the stage 21 closer to the loading/unloading port to perform the substrate. Loading of G. After the loading of the substrate G is completed, the control unit 50 closes the gate valve 11 and decompresses the chamber of the processing chamber 10 to a predetermined vacuum pressure by the exhaust device. Further, an anode (ITO) is formed in a pre-step by another film forming apparatus on the surface to be processed of the substrate G carried into the vapor deposition apparatus 2.
控制部50，配合搬入基板G的時序，將蒸發機構30控制在待機狀態。例 如，在基板G搬入之前，使加熱器電源部33導通，準備將各蒸發源31a~31h的各成膜材料加熱、蒸發。另外，此時，開閉閥43a~43h維持在關閉狀態，原料氣體噴出部40維持在停止狀態。 The control unit 50 controls the evaporation mechanism 30 to be in a standby state in accordance with the timing of loading the substrate G. example For example, before the substrate G is carried in, the heater power supply unit 33 is turned on, and it is prepared to heat and evaporate each of the deposition materials of the respective evaporation sources 31a to 31h. Further, at this time, the opening and closing valves 43a to 43h are maintained in the closed state, and the material gas ejecting unit 40 is maintained in the stopped state.
控制部50，為了對基板G實行汽相沉積處理，使移動機構20的平台21的掃描移動開始。然後，當基板G的前端部因為掃描移動而即將到達各噴嘴41之前時，控制部50，以既定的時序將對應噴嘴41的氣體管36的開閉閥37以及氣體管42的開閉閥43從原本的關閉(切斷)狀態切換到開啟(導通)狀態。另外，MFC38，藉由流經氣體管36的載體氣體的壓力或流量的控制，將噴嘴41的氣體噴出壓力或流量控制在設定值。 The control unit 50 starts the scanning movement of the stage 21 of the moving mechanism 20 in order to perform the vapor deposition process on the substrate G. Then, when the front end portion of the substrate G is just before the respective nozzles 41 due to the scanning movement, the control unit 50 sets the opening and closing valve 37 of the gas pipe 36 corresponding to the nozzle 41 and the opening and closing valve 43 of the gas pipe 42 from the original timing at a predetermined timing. The off (off) state is switched to the on (on) state. Further, the MFC 38 controls the gas discharge pressure or flow rate of the nozzle 41 to a set value by controlling the pressure or flow rate of the carrier gas flowing through the gas pipe 36.
藉此，各噴嘴41，開始噴出與載體氣體混合的原料氣體，並將該狀態維持到基板G的後端部通過各噴嘴41的頭上為止。該等噴嘴41a~41h，如上所述的，相對於基板G的移動方向依序並排設置，依照噴嘴41a~41h的順序原料氣體從其噴出口44a~44h噴出到基板G上。 Thereby, each nozzle 41 starts to discharge the material gas mixed with the carrier gas, and this state is maintained until the rear end portion of the substrate G passes through the head of each nozzle 41. As described above, the nozzles 41a to 41h are arranged side by side with respect to the moving direction of the substrate G, and the material gases are ejected from the ejection ports 44a to 44h onto the substrate G in accordance with the order of the nozzles 41a to 41h.
噴出口44a~44c、44g、44h，具有在與基板移動方向交叉的方向上延伸的狹縫形狀。因此，原料氣體從該等噴出口44a~44c、44g、44h向基板G的被處理面以帶狀噴出。帶狀噴出的原料氣體，以帶狀接觸通過其正上方的基板G的被處理面，在以該帶狀接觸的位置凝縮並堆積。藉此，薄膜以一定的膜厚形成面狀。 The discharge ports 44a to 44c, 44g, and 44h have slit shapes that extend in a direction intersecting the moving direction of the substrate. Therefore, the material gases are ejected from the discharge ports 44a to 44c, 44g, and 44h to the surface to be processed of the substrate G in a strip shape. The raw material gas ejected in a strip shape is brought into contact with the surface to be processed of the substrate G directly above the strip, and is condensed and deposited at the position where the strip is in contact. Thereby, the film is formed into a planar shape with a constant film thickness.
另一方面，噴出口44d~44f，設有在與基板移動方向交叉的方向上成列的複數個孔。因此，原料氣體從該等噴出口44d~44f向基板G以梳齒狀噴出。梳齒狀噴出的原料氣體，分散地接觸通過其正上方的基板G上所形成的主體材料的薄膜，在該分散地接觸的各位置凝縮並堆積。藉此，以一定的膜厚以及一定的間隔P形成複數條線狀薄膜。 On the other hand, the discharge ports 44d to 44f are provided with a plurality of holes arranged in a direction intersecting the moving direction of the substrate. Therefore, the material gases are ejected into the substrate G from the discharge ports 44d to 44f in a comb shape. The material gas ejected in the comb shape is dispersedly contacted with a film of the host material formed on the substrate G directly above it, and is condensed and accumulated at each position where the dispersion is in contact. Thereby, a plurality of linear films are formed with a constant film thickness and a constant interval P.
在此，更進一步具體說明如何利用各噴嘴41形成薄膜。當基板G的移動開始時，首先，基板G的前端部最初即將到達噴嘴41a的上方，在該時序， 從噴嘴41a的狹縫型噴出口44a將HIL原料氣體向正上方以帶狀噴出。該狀態維持到基板G的後端部通過噴嘴41a的頭上為止。藉此，從基板G的前端向後端以覆蓋基板G整體的方式使電洞注入層HIL的薄膜以一定的膜厚形成面狀。 Here, how to form a film by each nozzle 41 will be further specifically described. When the movement of the substrate G starts, first, the front end portion of the substrate G is initially approaching above the nozzle 41a, at this timing, The HIL source gas is ejected in a strip shape directly above the slit type discharge port 44a of the nozzle 41a. This state is maintained until the rear end portion of the substrate G passes over the head of the nozzle 41a. Thereby, the film of the hole injection layer HIL is formed into a planar shape with a constant thickness from the front end to the rear end of the substrate G so as to cover the entire substrate G.
接著，當基板G的前端部即將到達位於噴嘴41a的後段的噴嘴41b的上方時，HTL原料氣體從噴嘴41b的狹縫型噴出口44b向正上方以帶狀噴出。該狀態維持到基板G的後端部通過噴嘴41b的頭上為止。藉此，從基板G的前端向後端以覆蓋電洞注入層HIL整體的方式使電洞輸送層HTL的薄膜以一定的膜厚形成面狀。 Then, when the front end portion of the substrate G reaches the nozzle 41b located in the subsequent stage of the nozzle 41a, the HTL material gas is ejected in a strip shape from the slit-type discharge port 44b of the nozzle 41b. This state is maintained until the rear end portion of the substrate G passes over the head of the nozzle 41b. Thereby, the film of the hole transport layer HTL is formed into a planar shape with a constant film thickness so as to cover the entire hole injection layer HIL from the front end to the rear end of the substrate G.
接著，當基板G的前端部即將到達位於噴嘴41b的後段的噴嘴41c的上方時，EML原料氣體從噴嘴41c的狹縫型噴出口44c向正上方以帶狀噴出。該狀態維持到基板G的後端部通過噴嘴41c的頭上為止。藉此，從基板G的前端向後端以覆蓋電洞輸送層HTL整體的方式使發光層的主體膜EMHF以一定的膜厚形成面狀。另外，形成主體膜EMHF用的蒸發源31c、噴嘴41c、載體氣體供給部(專用的氣體管、開閉閥、MFC等)相當於第1汽相沉積部。另外，在圖式所示的例子中，噴射EML原料氣體的噴嘴41c的噴射口為狹縫型噴出口，然而亦可使用形成了複數個噴射口的多孔型噴出口當作噴嘴41c的噴射口。此時亦與狹縫型噴出口同樣，從多孔型噴出口將EML原料氣體以帶狀噴出，使主體膜EMHF以一定的膜厚形成面狀。另外，當噴射EML原料氣體的噴嘴41c的噴射口為多孔型噴出口時，亦能以在形成R發光層REL、G發光層GEL以及B發光層BEL的位置分別將主體膜EMHF以線狀形成的方式將EML原料氣體從多孔型噴出口噴出，藉此將主體膜EMHF的厚度針對各個色進行調整。如是便可使各色的發光特性提高。 Then, when the tip end portion of the substrate G reaches the nozzle 41c located in the subsequent stage of the nozzle 41b, the EML material gas is ejected in a strip shape from the slit-type discharge port 44c of the nozzle 41c. This state is maintained until the rear end portion of the substrate G passes over the head of the nozzle 41c. Thereby, the main film EMHF of the light-emitting layer is formed into a planar shape with a constant film thickness so as to cover the entire hole transport layer HTL from the front end to the rear end of the substrate G. Further, the evaporation source 31c, the nozzle 41c, and the carrier gas supply unit (a dedicated gas pipe, an opening/closing valve, an MFC, etc.) for forming the main film EMHF correspond to the first vapor phase deposition portion. Further, in the example shown in the drawings, the injection port of the nozzle 41c that ejects the EML material gas is a slit type discharge port, but a porous discharge port in which a plurality of injection ports are formed may be used as the injection port of the nozzle 41c. . At this time, similarly to the slit type discharge port, the EML material gas is ejected from the porous discharge port in a strip shape, and the main film EMHF is formed into a planar shape with a constant thickness. Further, when the ejection opening of the nozzle 41c for ejecting the EML material gas is a porous ejection port, the main film EMHF can be formed linearly at positions where the R light-emitting layer REL, the G light-emitting layer GEL, and the B light-emitting layer BEL are formed, respectively. In this manner, the EML material gas is ejected from the porous discharge port, whereby the thickness of the main film EMHF is adjusted for each color. If so, the luminescent properties of the respective colors can be improved.
接著，當基板G的前端部即將到達位於噴嘴41c的後段的噴嘴41d的上方時，EMLr原料氣體從噴嘴41d的多孔型噴出口44d向正上方以梳齒狀噴出。該狀態維持到基板G的後端部通過噴嘴41d的頭上為止。藉此，在主體膜EMHF上，形成R發光層REL用的客體材料的薄膜(以下記載為R客體膜) 以一定的膜厚以及一定的間隔P形成複數條線狀薄膜。 Then, when the front end portion of the substrate G reaches the nozzle 41d located in the subsequent stage of the nozzle 41c, the EMLr source gas is ejected in a comb shape from the porous discharge port 44d of the nozzle 41d. This state is maintained until the rear end portion of the substrate G passes over the head of the nozzle 41d. Thereby, a thin film of a guest material for the R light-emitting layer REL is formed on the host film EMHF (hereinafter referred to as an R guest film). A plurality of linear films are formed at a certain film thickness and a certain interval P.
同樣地，當基板G的前端部即將到達位於噴嘴41d的後段的噴嘴41e的上方時，EMLg原料氣體從噴嘴41e的多孔型噴出口44e向正上方以梳齒狀噴出。該狀態維持到基板G的後端部通過噴嘴41e的頭上為止。藉此，以追在R客體膜之後的方式，在發光層的主體膜EMHF之上，在R客體膜的旁邊隔著一定的間距g(參照圖5B)，形成G發光層GEL用的客體材料的薄膜(以下記載為G客體膜)，以一定的膜厚以及一定的間隔P形成複數條。另外，R客體膜與G客體膜的間距g為g=(P-3W)/3。 Similarly, when the front end portion of the substrate G reaches the nozzle 41e located in the subsequent stage of the nozzle 41d, the EMLg source gas is ejected in a comb shape from the porous discharge port 44e of the nozzle 41e directly upward. This state is maintained until the rear end portion of the substrate G passes over the head of the nozzle 41e. Thereby, a guest material for the G light-emitting layer GEL is formed on the main film EMHF of the light-emitting layer at a certain pitch g (see FIG. 5B) along the R-body film EMHF so as to follow the R guest film. The film (hereinafter referred to as a G guest film) is formed into a plurality of sheets at a constant film thickness and a constant interval P. Further, the distance g between the R guest film and the G guest film is g = (P - 3 W) / 3.
同樣地，當基板G的前端部即將到達位於噴嘴41e的後段的噴嘴41f的上方時，EMLb原料氣體從噴嘴41f的多孔型噴出口44f向正上方以梳齒狀噴出。該狀態維持到基板G的後端部通過噴嘴41f的頭上為止。藉此，以追在R客體膜以及G客體膜之後的方式，在發光層的主體膜EMHF之上且在R客體膜以及G客體膜之間分別隔著一定的間距g，形成B發光層BEL用的客體材料的薄膜(以下記載為B客體膜)，以一定的膜厚以及一定的間隔P形成複數條。另外，形成R客體膜、G客體膜、B客體膜用的蒸發源31d~31f、噴嘴41d~41f以及載體氣體供給部(專用的氣體管、開閉閥、MFC等)相當於第2汽相沉積部。 In the same manner, when the front end portion of the substrate G reaches the nozzle 41f located in the subsequent stage of the nozzle 41e, the EMLb source gas is ejected in a comb shape from the porous discharge port 44f of the nozzle 41f. This state is maintained until the rear end portion of the substrate G passes over the head of the nozzle 41f. Thereby, a B-light-emitting layer BEL is formed on the main film EMHF of the light-emitting layer and between the R guest film and the G guest film with a certain pitch g so as to follow the R guest film and the G guest film. A film of the guest material (hereinafter referred to as a B guest film) is used to form a plurality of films at a constant film thickness and a constant interval P. Further, the formation of the R guest film, the G guest film, the evaporation source 31d to 31f for the B guest film, the nozzles 41d to 41f, and the carrier gas supply unit (dedicated gas pipe, on-off valve, MFC, etc.) correspond to the second vapor deposition. unit.
圖7A係圖6所示之E-E線的示意剖面圖，圖7B係R發光層REL、G發光層GEL以及B發光層BEL藉由擴散所形成之狀態的E-E線的示意剖面圖。 7A is a schematic cross-sectional view taken along line E-E of FIG. 6, and FIG. 7B is a schematic cross-sectional view taken along line E-E of a state in which the R light-emitting layer REL, the G light-emitting layer GEL, and the B light-emitting layer BEL are formed by diffusion.
利用汽相沉積裝置2，如圖7A所示的，在主體膜EMHF上形成R客體膜、G客體膜、B客體膜。當將主體膜EMHF的膜厚設為D時，R、G、B客體膜的膜厚例如可為0.05D~0.2D左右。例如，當主體膜EMHF的膜厚D=40nm時，R、G、B客體膜的膜厚為2nm~8nm左右。另外，R、G、B客體膜的膜厚，並非限定於0.05D~0.2D左右，亦可因應客體材料的組成而適當變更。 Using the vapor deposition apparatus 2, as shown in Fig. 7A, an R guest film, a G guest film, and a B guest film are formed on the host film EMHF. When the film thickness of the host film EMHF is D, the film thickness of the R, G, and B guest films may be, for example, about 0.05D to 0.2D. For example, when the film thickness D of the host film EMHF is D=40 nm, the film thickness of the R, G, and B guest films is about 2 nm to 8 nm. Further, the film thickness of the R, G, and B guest films is not limited to about 0.05D to 0.2D, and may be appropriately changed depending on the composition of the guest material.
在主體膜EMHF上形成R客體膜、G客體膜、B客體膜之後，利用濃度擴 散或熱擴散等方式，各客體材料擴散到主體膜EMHF內，如圖7B所示的，在發光層EML中，形成R發光層REL、G發光層GEL以及B發光層BEL。 After forming the R guest film, the G guest film, and the B guest film on the host film EMHF, the concentration is expanded. In the manner of dispersion or thermal diffusion, each guest material diffuses into the bulk film EMHF, and as shown in FIG. 7B, in the light-emitting layer EML, an R light-emitting layer REL, a G light-emitting layer GEL, and a B light-emitting layer BEL are formed.
由於形成R客體膜、G客體膜以及B客體膜的噴嘴41d~41f相對於基板G配置在極接近的距離DS，故可將來自噴嘴41d~41f的輻射熱施加於基板G。藉此，便可促進各客體材料在主體膜EMHF內的熱擴散。 Since the nozzles 41d to 41f forming the R guest film, the G guest film, and the B guest film are disposed at a very close distance DS with respect to the substrate G, radiant heat from the nozzles 41d to 41f can be applied to the substrate G. Thereby, the heat diffusion of each guest material in the bulk film EMHF can be promoted.
另外，為了抑制噴嘴41d~41f所形成的過度的輻射熱，例如，可使噴嘴41d~41f的前端部採用向噴出口44d~44f以推拔狀變細的構造，以調整傳導至基板G的輻射熱。另外，例如，亦可將在內部設有流通冷卻媒體(例如冷卻水)的流路而可調整輻射熱的隔熱部設置在噴出口44d~44f的周圍，以調整傳導至基板G的輻射熱。 In addition, in order to suppress excessive radiant heat generated by the nozzles 41d to 41f, for example, the tip end portions of the nozzles 41d to 41f may be configured to be thinned toward the discharge ports 44d to 44f to adjust the radiant heat conducted to the substrate G. . Further, for example, a heat insulating portion that is provided with a flow path through which a cooling medium (for example, cooling water) flows and whose radiant heat can be adjusted may be provided around the discharge ports 44d to 44f to adjust the radiant heat conducted to the substrate G.
另外，為了調整各客體材料在主體膜EMHF內的熱擴散，亦可在處理室10內設置對基板G吹送冷媒氣體(例如氬氣)的吹送部。藉此，便可使各客體材料在主體膜EMHF內的熱擴散停止，使主體膜EMHF內的客體材料適當地擴散。 Further, in order to adjust the heat diffusion of each guest material in the main film EMHF, a blowing portion that blows a refrigerant gas (for example, argon gas) to the substrate G may be provided in the processing chamber 10. Thereby, the thermal diffusion of each guest material in the bulk film EMHF can be stopped, and the guest material in the bulk film EMHF can be appropriately diffused.
另外，為了調整各客體材料在主體膜EMHF內的熱擴散，控制部50，亦可控制熱媒體循環裝置(圖中未顯示)，對平台21內部的媒體通路循環供給既定溫度的熱媒體，藉此將基板G調整到既定溫度。 Further, in order to adjust the heat diffusion of each guest material in the main film EMHF, the control unit 50 may control the thermal media circulation device (not shown) to circulate the medium medium inside the stage 21 with a predetermined temperature of the thermal medium. This adjusts the substrate G to a predetermined temperature.
在此，利用從多孔型噴出口44噴出的原料氣體而在基板G上所形成的膜層，如圖8所示的，以從多孔型噴出口44的噴出方向中心為界線，大略形成山型。因此，假設，當將在主體材料中混合客體材料的有機物質的成膜材料加熱、蒸發的原料氣體從噴嘴噴出口44噴出時，RGB發光層雖會直接形成線狀，惟其形狀大略形成山型。 Here, as shown in FIG. 8, the film layer formed on the substrate G by the material gas discharged from the porous discharge port 44 is roughly formed in a mountain shape by the center of the discharge direction of the porous discharge port 44. . Therefore, it is assumed that when the material gas heated and evaporated by the film forming material of the organic material in which the guest material is mixed in the host material is ejected from the nozzle discharge port 44, the RGB light emitting layer directly forms a line shape, but the shape thereof is roughly formed into a mountain shape. .
另一方面，本實施態樣之發光層EML，在將主體膜EMHF以面狀形成之後，利用多孔型噴出口44形成比主體膜的膜厚更薄的R、G、B客體膜。因 此，如圖9所示的，比起利用多孔型噴出口44將RGB發光層直接形成線狀的情況而言，更可使其平坦化，藉此，便可精度良好地形成RGB發光層。 On the other hand, in the light-emitting layer EML of the present embodiment, after the main film EMHF is formed in a planar shape, the R, G, and B guest films which are thinner than the film thickness of the main film are formed by the porous discharge port 44. because As shown in FIG. 9, when the RGB light-emitting layer is directly formed into a line shape by the porous discharge port 44, the RGB light-emitting layer can be formed with high precision.
另外，雖將R客體膜、G客體膜以及B客體膜的線寬W當作相同進行說明，惟亦可因應各色的發光特性而使客體膜的線寬不同，另外，亦可考慮各客體材料的擴散特性設定R客體膜、G客體膜以及B客體膜的線寬。另外，R客體膜、G客體膜以及B客體膜的膜厚亦可不相同，可設定為使各色的發光特性成為吾人所期望的發光特性的膜厚。另外，例如，亦可考慮各客體材料的擴散特性設定R客體膜、G客體膜以及B客體膜的膜厚。R客體膜、G客體膜以及B客體膜的膜厚或線寬，可利用噴嘴噴出口44的口徑或數目(在Y方向上的數目)調整，另外，亦可利用載體氣體的壓力或流量調整。 In addition, although the line width W of the R guest film, the G guest film, and the B guest film is described as the same, the line width of the guest film may be different depending on the light-emitting characteristics of the respective colors, and each guest material may be considered. The diffusion characteristics set the line widths of the R guest film, the G guest film, and the B guest film. Further, the film thicknesses of the R guest film, the G guest film, and the B guest film may be different, and the light-emitting characteristics of the respective colors may be set to have a film thickness of a desired light-emitting property. Further, for example, the film thicknesses of the R guest film, the G guest film, and the B guest film may be set in consideration of the diffusion characteristics of the respective guest materials. The film thickness or line width of the R guest film, the G guest film, and the B guest film can be adjusted by the diameter or number (the number in the Y direction) of the nozzle discharge port 44, and can also be adjusted by the pressure or flow rate of the carrier gas. .
回到圖6，繼續說明有機膜的形成。當基板G的前端部即將到達位於噴嘴41f的後段的噴嘴41g的上方時，ETL原料氣體從噴嘴41g的狹縫型噴出口44g向正上方噴出。該狀態維持到基板G的後端部通過噴嘴41g的頭上為止。藉此，從基板G的前端向後端以覆蓋發光層EML整體的方式使電子輸送層ETL以一定的膜厚形成面狀。 Returning to Fig. 6, the formation of the organic film will be described. When the front end portion of the substrate G reaches the nozzle 41g located in the subsequent stage of the nozzle 41f, the ETL material gas is ejected upward from the slit type discharge port 44g of the nozzle 41g. This state is maintained until the rear end portion of the substrate G passes over the head of the nozzle 41g. Thereby, the electron transport layer ETL is formed into a planar shape with a constant film thickness so as to cover the entire light-emitting layer EML from the front end to the rear end of the substrate G.
然後，當基板G的前端部即將到達位於噴嘴41g的後段的噴嘴41h的上方時，EIL原料氣體從噴嘴41h的狹縫型噴出口44h向正上方噴出。該狀態維持到基板G的後端部通過噴嘴41h的頭上為止。藉此，從基板G的前端向後端以覆蓋電子輸送層ETL整體的方式使電子注入層EIL以一定的膜厚形成面狀。 Then, when the front end portion of the substrate G reaches the nozzle 41h located in the subsequent stage of the nozzle 41g, the EIL material gas is ejected upward from the slit type discharge port 44h of the nozzle 41h. This state is maintained until the rear end portion of the substrate G passes over the head of the nozzle 41h. Thereby, the electron injection layer EIL is formed into a planar shape with a constant thickness from the front end to the rear end of the substrate G so as to cover the entire electron transport layer ETL.
像這樣，在本實施態樣之汽相沉積裝置2中，以在處理室10內使基板G朝單一方向進行1次掃描移動的1次汽相沉積處理，便可在該基板G上堆疊形成複數種類的有機物質的薄膜。具體而言，便可在基板G上堆疊電洞注入層HIL、電洞輸送層HTL、將RGB發光層以線狀圖案並排設置的發光層EML、電子輸送層ETL以及電子注入層EIL，藉此，便可形成如圖2所示的裝置構造的有機電致發光彩色顯示器。 As described above, in the vapor phase deposition apparatus 2 of the present embodiment, a vapor phase deposition process in which the substrate G is subjected to one scanning movement in a single direction in the processing chamber 10 can be stacked on the substrate G. A film of a plurality of types of organic substances. Specifically, the hole injection layer HIL, the hole transport layer HTL, the light-emitting layer EML in which the RGB light-emitting layers are arranged side by side in a line pattern, the electron transport layer ETL, and the electron injection layer EIL can be stacked on the substrate G. An organic electroluminescent color display of the device configuration as shown in FIG. 2 can be formed.
另外，本實施態樣之汽相沉積裝置2，由於並未使用蔭蔽遮罩，故可大幅改善有機材料的利用效率、分塗效率、多層成膜效率、製造良率、空間效率、成本，並比較容易應付畫面加大化或量產化之需求。 In addition, since the vapor phase deposition device 2 of the present embodiment does not use the shadow mask, the utilization efficiency of the organic material, the coating efficiency, the multilayer film formation efficiency, the manufacturing yield, the space efficiency, and the cost can be greatly improved. It is easier to cope with the need for image enlargement or mass production.
另外，關於具有如圖2所示的裝置構造的有機電致發光彩色顯示器的驅動方式，可使用例如圖10所示的被動矩陣方式。此時，陽極以及陰極形成互相正交的線狀電極(行電極/列電極)，當對位於兩者交叉位置的畫素(R、G、B次像素)施加電壓時，該次像素會發光。 Further, regarding the driving method of the organic electroluminescence color display having the device configuration as shown in FIG. 2, for example, the passive matrix method shown in FIG. 10 can be used. At this time, the anode and the cathode form mutually orthogonal linear electrodes (row electrodes/column electrodes), and when a voltage is applied to the pixels (R, G, B sub-pixels) located at the intersections of the two, the sub-pixel emits light. .
另外，主動矩陣方式當然也是可行。當為主動矩陣方式時，雖圖示省略，惟會在陽極(ITO)側形成每個R、G、B次像素的TFT(薄膜電晶體)以及畫素電極，甚至掃描線、信號線。另一方面，陰極為共通電極，形成一片面狀薄膜。 In addition, the active matrix approach is certainly feasible. In the case of the active matrix method, although the illustration is omitted, TFTs (thin film transistors) and pixel electrodes of each of the R, G, and B sub-pixels, and even scanning lines and signal lines are formed on the anode (ITO) side. On the other hand, the cathode is a common electrode, forming a planar film.
〔2.第2實施態樣〕 [2. Second embodiment]
接著，說明第2實施態樣之基板處理系統。第2實施態樣之基板處理系統，相對於第1實施態樣的基板處理系統1而言，在汽相沉積裝置中的發光層形成的構造不同。以下，以與第1實施態樣不同的部分為主進行說明，共通的部分會附上相同的符號並適當省略說明。 Next, a substrate processing system according to a second embodiment will be described. In the substrate processing system of the second embodiment, the structure of the light-emitting layer formed in the vapor deposition apparatus differs from the substrate processing system 1 of the first embodiment. In the following, portions that are different from those in the first embodiment will be mainly described, and the same portions will be denoted by the same reference numerals, and their description will be appropriately omitted.
圖11係表示利用第2實施態樣之汽相沉積裝置2A形成有機層的態樣圖。如圖11所示的汽相沉積裝置2A的原料氣體噴出部40A，在噴嘴41f的後段且噴嘴41g的前段，設置了將成為發光層EML的主體材料的有機物質的成膜材料加熱、蒸發並將EML原料氣體噴出的噴嘴41i。 Fig. 11 is a view showing a state in which an organic layer is formed by the vapor phase deposition apparatus 2A of the second embodiment. The material gas ejecting portion 40A of the vapor phase deposition device 2A shown in Fig. 11 is provided with a film forming material for an organic substance which is a host material of the light emitting layer EML in the subsequent stage of the nozzle 41f and in front of the nozzle 41g, and is heated and evaporated. A nozzle 41i that ejects EML material gas.
該噴嘴41i，與噴嘴41c同樣，在對應的蒸發源31(參照圖3)所產生的EML原料氣體與載體氣體混合並供給到該噴嘴41i。具體而言，在蒸發源31中，將成為發光層EML的主體材料的有機物質的成膜材料加熱、蒸發以產生EML原料氣體，並透過氣體管42(參照圖3)供給到噴嘴41i。 Similarly to the nozzle 41c, the nozzle 41i mixes the EML material gas generated by the corresponding evaporation source 31 (see FIG. 3) with the carrier gas and supplies it to the nozzle 41i. Specifically, in the evaporation source 31, a film forming material of an organic substance which is a host material of the light-emitting layer EML is heated and evaporated to generate an EML material gas, and is supplied to the nozzle 41i through the gas pipe 42 (see FIG. 3).
在噴嘴41i的頂面，與噴嘴41c的噴出口44c(參照圖4)同樣形成了狹縫型噴出口44i，當基板G的前端部即將到達該噴出口44i的上方時，EML原料氣體從噴出口44i向正上方以帶狀噴出。該狀態維持到基板G的後端部通過噴嘴41i的頭上為止。 A slit-type discharge port 44i is formed on the top surface of the nozzle 41i in the same manner as the discharge port 44c (see FIG. 4) of the nozzle 41c. When the front end portion of the substrate G reaches the discharge port 44i, the EML material gas is sprayed. The outlet 44i is ejected in a strip shape directly above. This state is maintained until the rear end portion of the substrate G passes over the head of the nozzle 41i.
藉此，從基板G的前端向後端以覆蓋基板G的被處理面整體的方式使發光層的主體膜EMHF以一定的膜厚形成面狀，R客體膜、G客體膜以及B客體膜形成被上下的主體膜EMHF夾住的狀態。另外，形成主體膜EMHF用的蒸發源31、噴嘴41i、載體氣體供給部(專用的氣體管、開閉閥、MFC等)相當於第3汽相沉積部。 Thereby, the main film EMHF of the light-emitting layer is formed into a planar shape with a constant thickness from the front end to the rear end of the substrate G so as to cover the entire surface to be processed of the substrate G, and the R guest film, the G guest film, and the B guest film are formed. The state in which the upper and lower main films are sandwiched by EMHF. Further, the evaporation source 31, the nozzle 41i, and the carrier gas supply unit (dedicated gas tube, on-off valve, MFC, and the like) for forming the main film EMHF correspond to the third vapor phase deposition portion.
圖12A係圖11所示之F-F線的示意剖面圖，圖12B係利用擴散形成R發光層REL、G發光層GEL以及B發光層BEL的狀態的示意剖面圖。 12A is a schematic cross-sectional view taken along the line F-F shown in FIG. 11, and FIG. 12B is a schematic cross-sectional view showing a state in which the R light-emitting layer REL, the G light-emitting layer GEL, and the B light-emitting layer BEL are formed by diffusion.
利用汽相沉積裝置2，如圖12A所示的，在主體膜EMHF上形成R客體膜、G客體膜、B客體膜，並再於其上形成主體膜EMHF。然後，各客體材料利用濃度擴散或熱擴散等方式在主體膜EMHF內擴散，如圖12B所示的，在發光層EML中，形成R發光層REL、G發光層GEL以及B發光層BEL。 Using the vapor deposition apparatus 2, as shown in Fig. 12A, an R guest film, a G guest film, a B guest film are formed on the host film EMHF, and a host film EMHF is formed thereon. Then, each guest material is diffused in the bulk film EMHF by means of concentration diffusion or thermal diffusion, and as shown in FIG. 12B, in the light-emitting layer EML, an R light-emitting layer REL, a G light-emitting layer GEL, and a B light-emitting layer BEL are formed.
像這樣，利用主體膜EMHF夾住客體膜以形成發光層，藉此便可調整從陽極所注入的電洞與從陰極所注入的電子再度結合的位置。因此，藉由調整上下的主體膜EMHF的膜厚等便可輕易地調整發光特性。 In this manner, the body film EMHF is used to sandwich the guest body film to form the light-emitting layer, whereby the position where the hole injected from the anode and the electron injected from the cathode are recombined can be adjusted. Therefore, the light-emitting characteristics can be easily adjusted by adjusting the film thickness of the upper and lower main films EMHF.
另外，與第1實施態樣同樣，在發光層EML上，如圖13所示的，可形成電子輸送層ETL、電子注入層EIL以及陰極等。另外，與第1實施態樣同樣，R客體膜、G客體膜以及B客體膜的線寬W亦可不相同，另外，亦可考慮各客體材料的擴散特性設定R客體膜、G客體膜以及B客體膜的線寬。 Further, similarly to the first embodiment, as shown in FIG. 13, on the light-emitting layer EML, an electron transport layer ETL, an electron injection layer EIL, a cathode, and the like can be formed. Further, similarly to the first embodiment, the line width W of the R guest film, the G guest film, and the B guest film may be different, and the R guest film, the G guest film, and the B may be set in consideration of the diffusion characteristics of the respective guest materials. The line width of the guest film.
另外，R客體膜、G客體膜以及B客體膜的膜厚亦可不相同，亦可設定 為使各色的發光特性成為吾人所期望的發光特性的膜厚。另外，例如，亦可考慮各客體材料的擴散特性設定R客體膜、G客體膜以及B客體膜的膜厚。R客體膜、G客體膜以及B客體膜的膜厚或線寬，可利用噴嘴噴出口44的口徑或數目(在Y方向上的數目)進行調整，另外，亦可利用載體氣體的壓力或流量進行調整。另外，亦可將噴射EML原料氣體的噴嘴41c、41i的噴射口設為多孔型噴出口，並以在形成R發光層REL、G發光層GEL以及B發光層BEL的位置分別將上下的主體膜EMHF形成線狀的方式，將EML原料氣體從多孔型噴出口噴出，藉此針對各色調整上下的主體膜EMHF的厚度。藉此便可使各色的發光特性提高。 In addition, the film thicknesses of the R guest film, the G guest film, and the B guest film may be different, and may be set. In order to make the light-emitting characteristics of the respective colors become the film thickness of the light-emitting characteristics desired by us. Further, for example, the film thicknesses of the R guest film, the G guest film, and the B guest film may be set in consideration of the diffusion characteristics of the respective guest materials. The film thickness or line width of the R guest film, the G guest film, and the B guest film can be adjusted by the diameter or number (the number in the Y direction) of the nozzle discharge port 44, and the pressure or flow rate of the carrier gas can also be utilized. Make adjustments. In addition, the injection ports of the nozzles 41c and 41i that eject the EML material gas may be made into a porous discharge port, and the upper and lower body films may be respectively formed at positions where the R light-emitting layer REL, the G light-emitting layer GEL, and the B light-emitting layer BEL are formed. The EMHF is formed in a linear form, and the EML material gas is ejected from the porous ejecting port, whereby the thickness of the upper and lower main film EMHF is adjusted for each color. Thereby, the light-emitting characteristics of the respective colors can be improved.
像這樣，第2實施態樣之汽相沉積裝置2A，相對於第1實施態樣之汽相沉積裝置2而言，在蒸發機構30、原料氣體噴出部40A以及載體氣體供給機構34，分別增設更進一步形成主體膜EMHF用的蒸發源、噴嘴、載體氣體供給部(專用的氣體管、開閉閥、MFC等)。藉此，便可利用主體膜EMHF夾住客體膜以形成發光層，並輕易地調整發光特性。 In the vapor phase deposition apparatus 2A of the second embodiment, the evaporation mechanism 30, the material gas discharge unit 40A, and the carrier gas supply unit 34 are separately provided for the vapor phase deposition apparatus 2 of the first embodiment. Further, an evaporation source, a nozzle, and a carrier gas supply unit (a dedicated gas pipe, an on-off valve, an MFC, or the like) for the main film EMHF are formed. Thereby, the body film EMHF can be used to sandwich the guest body film to form the light-emitting layer, and the light-emitting characteristics can be easily adjusted.
另外，關於從噴嘴41i噴出的原料氣體，亦可取代EML原料氣體，而使用將成為電洞阻擋層HBL的材料的有機物質的成膜材料加熱、蒸發的HBL原料氣體。藉此，便可防止電洞擴散到電子輸送層ETL的現象，並使發光特性提高。 In addition, the raw material gas discharged from the nozzle 41i may be a HBL source gas which is heated and evaporated by using a film forming material of an organic substance which is a material of the hole blocking layer HBL instead of the EML material gas. Thereby, the phenomenon in which the holes are diffused to the electron transport layer ETL can be prevented, and the light-emitting characteristics can be improved.
〔3.其他實施態樣或變化實施例〕 [3. Other Embodiments or Variations]
以上係說明本發明的較佳實施態樣，惟本發明並不限於上述實施態樣，在其技術思想範圍內可存在其他實施態樣或各種變化實施例。 The preferred embodiments of the present invention are described above, but the present invention is not limited to the above embodiments, and other embodiments or various modified embodiments may exist within the scope of the technical idea.
在上述的實施態樣中，各色發光層之間係以客體材料不會擴散的主體膜EMHF分離，惟亦可形成設置了分離用堤板(隔壁)的裝置構造。例如，亦可如圖14所示的設置堤板60，使主體材料與客體材料所形成的RGB發光層被堤板60分離。藉此便可使各色的發光層之間以精度良好的方式形成。此時，藉由針對各色調整主體膜EMHF的厚度，便可使各色的發光特性提 高。另外，當R客體膜、G客體膜、B客體膜被上下的主體膜EMHF夾住時，亦可針對各色調整上下的主體膜EMHF的各自的厚度。藉此便可使各色的發光特性提高。 In the above-described embodiment, the main film EMHF in which the guest material does not diffuse is separated between the respective color light-emitting layers, but the device structure in which the separation bank (partition wall) is provided may be formed. For example, the bank 60 may be provided as shown in FIG. 14 so that the RGB light-emitting layer formed of the host material and the guest material is separated by the bank 60. Thereby, the light-emitting layers of the respective colors can be formed with high precision. At this time, by adjusting the thickness of the main film EMHF for each color, the luminescent characteristics of the respective colors can be improved. high. Further, when the R guest film, the G guest film, and the B guest film are sandwiched by the upper and lower main film EMHF, the thickness of each of the upper and lower main films EMHF can be adjusted for each color. Thereby, the light-emitting characteristics of the respective colors can be improved.
堤板60，可將例如丙烯酸樹脂、酚醛樹脂、聚醯胺樹脂、聚亞醯胺樹脂等的有機物質當作材質，並利用例如噴墨法或印刷法等在前置步驟製作，惟亦可在汽相沉積裝置中利用汽相沉積法在基板G上製作。另外，在圖14所示的例子中，係將堤板60形成在透明陽極ITO上，惟亦可將堤板60形成在例如電洞輸送層HTL上。 The bank 60 can be made of an organic material such as an acrylic resin, a phenol resin, a polyamide resin, or a polyimide resin, and can be produced in a pre-step by, for example, an inkjet method or a printing method. It is fabricated on the substrate G by vapor phase deposition in a vapor phase deposition apparatus. Further, in the example shown in Fig. 14, the bank 60 is formed on the transparent anode ITO, but the bank 60 may be formed on, for example, the hole transport layer HTL.
例如，在製作圖14所示之裝置構造時，在蒸發機構30、原料氣體噴出部40以及載體氣體供給機構34，分別增設形成堤板60用的蒸發源、噴嘴、載體氣體供給部(專用的氣體管、開閉閥、MFC等)。堤板形成用的噴嘴，在將堤板60形成於透明陽極ITO上的情況下，配置在比噴嘴41a更上游側的位置。 For example, when the apparatus structure shown in FIG. 14 is produced, an evaporation source, a nozzle, and a carrier gas supply unit for forming the bank 60 are separately provided in the evaporation mechanism 30, the material gas discharge unit 40, and the carrier gas supply unit 34 (dedicated Gas pipe, on-off valve, MFC, etc.). When the bank plate 60 is formed on the transparent anode ITO, the nozzle for forming the bank plate is disposed on the upstream side of the nozzle 41a.
另外，上述的實施態樣，係分別使用噴嘴41d~41f形成R客體膜、G客體膜、B客體膜，惟亦可使用設有開口的蔭蔽遮罩形成R客體膜、G客體膜、B客體膜。由於相對於發光層EML的厚度而言客體膜的厚度較薄，故即使在使用蔭蔽遮罩的情況下，亦可提高主體材料的利用效率，藉此，可使形成發光層用的有機材料的利用效率提高。 Further, in the above embodiment, the R guest film, the G guest film, and the B guest film are formed by using the nozzles 41d to 41f, respectively, but the R guest film, the G guest film, and the B object may be formed using the shadow mask provided with the opening. membrane. Since the thickness of the guest film is thin relative to the thickness of the light-emitting layer EML, even in the case of using the shadow mask, the utilization efficiency of the host material can be improved, whereby the organic material for forming the light-emitting layer can be formed. Increased utilization efficiency.
另外，在上述的實施態樣中，係將形成面狀薄膜用的噴出口44a~44c、44g~44i形成狹縫狀，惟亦可形成一列或複數列的多孔型噴出口。此時，可選定各噴出口44a~44c，44g~44i的口徑、間距以及相隔距離DL，以對通過上方的基板G將原料氣體以實質上帶狀的方式噴出。 Further, in the above-described embodiment, the discharge ports 44a to 44c and 44g to 44i for forming the planar film are formed in a slit shape, but a plurality of rows of porous discharge ports may be formed. At this time, the diameter, the pitch, and the separation distance DL of each of the discharge ports 44a to 44c and 44g to 44i can be selected to eject the material gas in a substantially strip shape on the substrate G passing therethrough.
另外，在上述實施態樣中，各噴嘴41a~41i的長邊方向係與基板掃描方向(X方向)正交的方向(Y方向)，惟亦可因應需要在水平面內自同上方向(Y方向)斜向傾斜。另外，基板G的態勢亦不限於面向下方的方式，亦 可為例如面向上方的方式或是使基板G的被處理面朝向横方向的方式等。各噴嘴41a~41i將原料氣體噴出的方向亦可因應被處理基板的方向或態勢而採取任意方向。 Further, in the above-described embodiment, the longitudinal direction of each of the nozzles 41a to 41i is a direction (Y direction) orthogonal to the scanning direction (X direction) of the substrate, but may be in the horizontal direction from the same direction (Y direction) as needed. ) Tilted obliquely. In addition, the situation of the substrate G is not limited to the way facing downward, and For example, the method may be such that the surface is facing upward or the surface to be processed of the substrate G is oriented in the lateral direction. The direction in which the respective nozzles 41a to 41i eject the source gas may take an arbitrary direction depending on the direction or posture of the substrate to be processed.
另外，在上述的實施態樣中，係將形成各薄膜用的噴嘴41a~噴嘴41i分別1條1條地設置，惟亦可將其中任一或全部的噴嘴各設置複數條。另外，在上述的實施態樣中，係將各噴嘴41d~41f的噴出口44d~44f在掃描移動方向(X方向)上各設置一個，惟亦可排列複數個。亦即，使在Y方向上並排的噴出口44d~44f在X方向上設置複數列。 Further, in the above-described embodiment, the nozzles 41a to 41i for forming the respective thin films are provided one by one, but a plurality of nozzles may be provided in any one or all of the nozzles. Further, in the above-described embodiment, the discharge ports 44d to 44f of the respective nozzles 41d to 41f are provided one by one in the scanning movement direction (X direction), but a plurality of them may be arranged. That is, the plurality of rows are arranged in the X direction by the discharge ports 44d to 44f which are arranged side by side in the Y direction.
另外，上述的實施態樣，在汽相沉積掃描中，係以R客體膜、G客體膜以及B客體膜的順序開始在基板G上的形成過程，惟並非僅限於該順序，亦可按照任意的順序形成線狀的客體膜。因此，在原料氣體噴出部40中，可任意選擇噴嘴41d、噴嘴41e以及噴嘴41f的配置順序。 In addition, in the above-described embodiment, in the vapor deposition scanning, the formation process of the R guest film, the G guest film, and the B guest film is started on the substrate G, but it is not limited to the order, and may be any The sequence forms a linear guest film. Therefore, in the material gas discharge unit 40, the arrangement order of the nozzle 41d, the nozzle 41e, and the nozzle 41f can be arbitrarily selected.
另外，在上述的實施態樣中，係將透明陽極ITO當作基底層並以電洞注入層HIL、電洞輸送層HTL、......的順序將各有機層以汽相沉積方式堆疊形成。然而，亦可反方向，亦即將陰極當作基底層並以電子注入層EIL、電子輸送層ETL、......的順序將各有機層以汽相沉積方式堆疊形成。 In addition, in the above embodiment, the transparent anode ITO is used as the base layer, and each organic layer is vapor-deposited in the order of the hole injection layer HIL, the hole transport layer HTL, . Stacked. However, it is also possible to form the cathode layer in the opposite direction, that is, the cathode as the base layer and in the order of the electron injection layer EIL, the electron transport layer ETL, .
另外，上述的實施態樣的汽相沉積裝置以及汽相沉積方法，亦可適用於省略電洞注入層HIL、電洞輸送層HTL、電子輸送層ETL、電子注入層EIL的一部分的有機電致發光顯示器，另外，亦可適用於將電洞注入層HIL、電洞輸送層HTL、電子輸送層ETL、電子注入層EIL的一部分或全部置換成無機物質的薄膜的有機電致發光顯示器。 In addition, the vapor phase deposition apparatus and the vapor phase deposition method of the above embodiment may also be applied to the organic electrochemistry of a part of the hole injection layer HIL, the hole transport layer HTL, the electron transport layer ETL, and the electron injection layer EIL. The light-emitting display can also be applied to an organic electroluminescence display in which a part or all of the hole injection layer HIL, the hole transport layer HTL, the electron transport layer ETL, and the electron injection layer EIL are replaced with a thin film of an inorganic substance.
另外，上述的實施態樣的汽相沉積裝置以及汽相沉積方法，可用以製造照明裝置。亦即，上述的實施態樣的汽相沉積裝置以及汽相沉積方法，可用以在基板G上將RGB發光層以線狀形成，並藉由使各發光層發光，以製造出白色發光的有機電致發光照明裝置。另外，例如，上述的實施態樣的 汽相沉積裝置以及汽相沉積方法，可用以在基板G上將RGB發光層以線狀形成，並可藉由調整各發光層的發光強度，以製造出可調整發光色調的有機電致發光照明裝置。 Further, the vapor phase deposition apparatus and the vapor phase deposition method of the above embodiment can be used to manufacture a lighting apparatus. That is, the vapor phase deposition apparatus and the vapor phase deposition method of the above embodiment may be used to form the RGB light-emitting layer in a line shape on the substrate G, and to cause the light-emitting layers to emit light to produce white light. Electroluminescent lighting device. In addition, for example, the above-described embodiment The vapor phase deposition device and the vapor phase deposition method can be used to form the RGB light-emitting layer in a line shape on the substrate G, and can adjust the light-emitting intensity of each light-emitting layer to produce an organic electroluminescent illumination with adjustable light-emitting color. Device.
本領域從業人員可輕易導出更進一步的功效或變化實施例。因此，本發明的更廣範圍的態樣，並非僅限於如以上所表示或記述的特定詳細技術內容以及代表性實施態樣。因此，在不超出由所附的專利請求範圍及其均等範圍所定義的總括性發明概念的精神或範圍之內，可作出各種變更。 Further efficacies or variations of the embodiments can be readily derived by those skilled in the art. Therefore, the scope of the invention is not limited to the specific details of Accordingly, various modifications may be made without departing from the spirit and scope of the inventions.
2‧‧‧汽相沉積裝置 2‧‧‧Vapor phase deposition device
10‧‧‧處理室 10‧‧‧Processing room
11‧‧‧閘閥 11‧‧‧ gate valve
12‧‧‧開口 12‧‧‧ openings
13‧‧‧排氣口 13‧‧‧Exhaust port
20‧‧‧移動機構 20‧‧‧Mobile agencies
21‧‧‧平台 21‧‧‧ platform
22‧‧‧掃描部 22‧‧‧ Scanning Department
30‧‧‧蒸發機構 30‧‧‧Evaporation mechanism
31a~31h‧‧‧蒸發源 31a~31h‧‧‧ evaporation source
32a~32h‧‧‧電阻發熱元件 32a~32h‧‧‧Resistive heating element
33‧‧‧加熱器電源部 33‧‧‧Heating Power Supply Department
34‧‧‧載體氣體供給機構 34‧‧‧Carrier gas supply mechanism
35‧‧‧載體氣體供給源 35‧‧‧ Carrier gas supply source
36a~36h‧‧‧氣體管 36a~36h‧‧‧ gas pipe
37a~37h‧‧‧開閉閥 37a~37h‧‧‧Opening and closing valve
38a~38h‧‧‧質量流量控制部 38a~38h‧‧‧Quality Flow Control Department
40‧‧‧原料氣體噴出部 40‧‧‧Material gas injection department
41a~41h‧‧‧噴嘴 41a~41h‧‧‧Nozzles
42a~42h‧‧‧氣體管 42a~42h‧‧‧ gas pipe
43a~43h‧‧‧開閉閥 43a~43h‧‧‧Opening valve
45‧‧‧隔壁板 45‧‧‧ partition board
50‧‧‧控制部 50‧‧‧Control Department
DL、DS‧‧‧距離 DL, DS‧‧‧ distance
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| TWI755956B (en) * | 2020-12-03 | 2022-02-21 | 財團法人國家實驗研究院 | Gas distribution module and vacuum coating device |
| TWI784332B (en) * | 2020-10-23 | 2022-11-21 | 大陸商業成科技（成都）有限公司 | Sputtering system |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4061840B2 (en) * | 2000-12-28 | 2008-03-19 | 凸版印刷株式会社 | Hole transporting compound and organic thin film light emitting device for organic thin film light emitting device |
| US7067170B2 (en) * | 2002-09-23 | 2006-06-27 | Eastman Kodak Company | Depositing layers in OLED devices using viscous flow |
| JP5252481B2 (en) * | 2008-03-31 | 2013-07-31 | 国立大学法人広島大学 | Light emitting element |
| JP2010192137A (en) * | 2009-02-16 | 2010-09-02 | Seiko Epson Corp | Manufacturing method of organic el display device |
| JP2011068916A (en) * | 2009-09-22 | 2011-04-07 | Toshiba Corp | Film deposition method and film deposition apparatus |
| CN103283306B (en) * | 2010-12-27 | 2016-07-20 | 夏普株式会社 | The forming method of evaporation film and the manufacture method of display device |
| JP5565327B2 (en) * | 2011-01-24 | 2014-08-06 | コニカミノルタ株式会社 | Vapor deposition equipment |
| TW201250024A (en) * | 2011-03-03 | 2012-12-16 | Tokyo Electron Ltd | Vapor-deposition device, vapor-deposition method |
-
2012
- 2012-09-03 JP JP2012193573A patent/JP2014047416A/en active Pending
-
2013
- 2013-08-21 WO PCT/JP2013/072313 patent/WO2014034499A1/en active Application Filing
- 2013-09-02 TW TW102131562A patent/TW201416470A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI784332B (en) * | 2020-10-23 | 2022-11-21 | 大陸商業成科技（成都）有限公司 | Sputtering system |
| TWI755956B (en) * | 2020-12-03 | 2022-02-21 | 財團法人國家實驗研究院 | Gas distribution module and vacuum coating device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014034499A1 (en) | 2014-03-06 |
| JP2014047416A (en) | 2014-03-17 |
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