TW201344105A - 發光二極體燈源裝置 - Google Patents
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- 239000000843 powder Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
一種發光二極體燈源裝置,包括發光二極體光源,該發光二極體燈源裝置還包括設於該發光二極體光源的出光路徑上的第一透光結構和圍設該第一透光結構的第二透光結構,該第一透光結構內設有散射粉體,該發光二極體光源收容於該第一透光結構內部。
Description
本發明涉及一種發光二極體燈源裝置,尤其涉及一種具有大發光角度且光強分佈均勻的發光二極體燈源裝置。
相比於傳統的發光源,發光二極體(Light Emitting Diode,LED)具有重量輕、體積小、污染低、壽命長等優點,其作為一種新型的光源,已經被越來越多地應用到各領域當中,如路燈、交通燈、信號燈、射燈及裝飾燈等。然,發光二極體作為點光源,在應用過程中,其出光角度一般僅為120°且光強分佈不均勻。
鑒於此,本發明旨在提供一種具有較大發光角度且光強分佈均勻的發光二極體燈源裝置。
一種發光二極體燈源裝置,包括發光二極體光源,該發光二極體燈源裝置還包括設於該發光二極體光源的出光路徑上的第一透光結構和圍設該第一透光結構的第二透光結構,該第一透光結構內設有散射粉體,該發光二極體光源收容於該第一透光結構內部。
本發明藉由在發光二極體光源出光路徑上設置第一透光結構和第二透光結構,並在第一透光結構內設有散射粉體,從而可使發光二極體光源發出的光線在散射粉體的散射作用下轉換成為多方向出射的光線,從而使得發光二極體燈源裝置具有較大出光角度,並且使得各方向上的光強度分佈均勻。
圖1為本發明所提供的發光二極體燈源裝置1的位置關係圖。發光二極體燈源裝置1包括發光二極體光源10,圍設於發光二極體光源10的一第一透光結構20,以及圍設於發光二極體光源10和第一透光結構20的一第二透光結構30。
於本實施例中,發光二極體光源10為一發光二極體封裝結構,其具有一底面11。當然,發光二極體光源10也可為具有電性功能連接的LED晶片。
第一透光結構20設於發光二極體光源10的出光路徑上且第一透光結構20內部設有散射粉體21。請同時參閱圖2,於本實施例中,第一透光結構20大致呈球形。發光二極體光源10收容於第一透光結構20的內部,且其底面11與第一透光結構20的底面平齊。當然,發光二極體光源10也可設於第一透光結構20的外部。當然,散射粉體21也可設於第一透光結構20內的、鄰近第一透光結構20外表面的邊界區域。
第二透光結構30由透光材料製成,其圍設發光二極體光源10和第一透光結構20的外側且緊貼第一透光結構20的外表面。於本實施例中,第二透光結構30為一透鏡,其外部輪廓大致呈球形。第二透光結構30收容第一透光結構20於其內,且其折射率為N1,其底部與發光二極體光源10的底面11平齊。當然,當散射粉體21設於第一透光結構20內的、鄰近第一透光結構20外表面的邊界區域時,該散射粉體21鄰近第二透光結構30。
請參閱圖2,此為第一透光結構20與第二透光結構30的幾何關係圖。在此定義球M和球N。球M和球N的球心分別為點O2 和點O1,其半徑分別為r和R,R>r,且球M和球N在點C形成內切。第一透光結構20的外部輪廓與球M重合,第二透光結構30的外部輪廓與球N重合。因此,點C位於O1O2 的延長線上而遠離點O1,O1O2 的延長線與球M相交於點A。發光二極體光源10位於第一透光結構20所處球體的球心點O2與第二透光結構30所處球體的球心點O1的連線上,且發光二極體光源10位於第二透光結構30所處球體的球心點O1的一側,並相對遠離第一透光結構20所處球體的球心點O2。
請再次參閱圖1,當發光二極體光源10發光時,其發出的光線射至第一透光結構20,由於其內散射粉體21的散射效應,當光線從第一透光結構20射出時,可朝向各個不同的方向入射至第二透光結構30,從而增加了發光二極體光源10的出光角度,且使各方向上的光強分佈均勻。當光線自點A、且沿垂直於點O1和點O2的連線的方向射至第二透光結構30時,該光線入射至第二透光結構30的外輪廓上的點B,此時入射角θ最大。當角θ與第二透光結構30發生全反射的臨界角β相等時,該光線發生折射,其折射角α=90°。當θ>β時,該光線將會發生全反射而被反射至第二透光結構30的內部,導致光的損失。因此,當θ<β,角α<90°,此時定義空氣的折射率為1,根據光的折射定律,N1Sinθ= Sinα<Sin90°=1,又由圖2中的幾何關係可得知,Sinθ=﹙2r-R﹚/R,因此,N1﹙2r-R﹚/R<1,即N1<R/﹙2r-R﹚。由此可知,當滿足N1<R/﹙2r-R﹚時,光線由第二透光結構30入射至空氣中時不會因為入射角θ過大而導致光線在第一透光結構20和第二透光結構30內繞射,從而產生光學損失,提高了光線的利用率。
本發明由於在發光二極體光源10的週邊設置第一透光結構20和第二透光結構30,並在第一透光結構20內設有散射粉體,從而將發光二極體光源10發出的高指向性的光線轉換成為多方向出射的光線,從而使得發光二極體燈源裝置1具有較大發光角,並且使得各方向上的光強分佈均勻。
可以理解地,散射粉體可由單色的螢光粉材料組成,也可由多種色彩的螢光粉材料混合而成,故可根據需求調配螢光粉的色彩來獲得不同的出光顏色,改變光線的波長,並可調整發光二極體光源10的色溫。散射粉體也可根據實際需要由SiO2,Al2O3或Silicate等粉體材料和螢光粉材料層狀堆疊形成。
當然,第一透光結構20、第二透光結構30及設於第一透光結構20內部散射粉體21等結構,也可理解為:第二透光結構30內填充有球狀的散射粉體21,第二透光結構30所處球體的半徑為R,而散射粉體21所處球體的半徑為r,該發光二極體光源10收容於該散射粉體21內。
可以理解地,圖1和圖2為了簡潔地顯示出發光二極體光源10所發出的光線的散射路徑及原理,並未示出發光二極體燈源裝置1的其他結構,因此本發明中發光二極體燈源裝置1並不局限於僅包含有圖1中所顯示的結構,其還可以包括有燈座和其他結構,在此不再贅述。
綜上所述,本發明符合發明專利要件,爰依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,舉凡熟悉本案技藝之人士,在爰依本發明精神所作之等效修飾或變化,皆應涵蓋於以下之申請專利範圍內。
1...發光二極體燈源裝置
10...發光二極體光源
11...底面
20...第一透光結構
21...散射粉體
30...第二透光結構
O1、O2、A、B、C...點
M、N...球
圖1為本發明的發光二極體燈源裝置的位置關係圖。
圖2為圖1中的第一透光結構和第二透光結構的幾何關係圖。
1...發光二極體燈源裝置
10...發光二極體光源
11...底面
20...第一透光結構
21...散射粉體
30...第二透光結構
O1、O2、A、B...點
Claims (10)
- 一種發光二極體燈源裝置,包括發光二極體光源,其改良在於:該發光二極體燈源裝置還包括設於該發光二極體光源的出光路徑上的第一透光結構和圍設該第一透光結構的第二透光結構,該第一透光結構內設有散射粉體,該發光二極體光源收容於該第一透光結構內部。
- 如申請專利範圍第1項所述的發光二極體燈源裝置,其中,該第一透光結構和第二透光結構均呈球狀,且該第一透光結構和第二透光結構所處球體的半徑分別為r和R,r<R,該第一透光結構所在的球體與第二透光結構所在的球體相內切。
- 如申請專利範圍第2項所述的發光二極體燈源裝置,其中,該發光二極體光源位於第一透光結構所處球體的球心與第二透光結構所處球體的球心的連線上,該發光二極體光源位於第二透光結構所處球體的球心一側、並相對遠離第一透光結構所處球體的球心。
- 如申請專利範圍第2項所述的發光二極體燈源裝置,其中,該第二透光結構的折射率為N1,且該折射率N1滿足關係:N1<R/﹙2r-R﹚。
- 如申請專利範圍第1項所述的發光二極體燈源裝置,其中,該散射粉體由螢光粉材料組成,或由SiO2粉體、Al2O3粉體或Silicate粉體材料和螢光粉材料層狀堆疊組成。
- 如申請專利範圍第1項所述的發光二極體燈源裝置,其中,該散射粉體均勻分佈在整個第一透光結構的內部。
- 如申請專利範圍第1項所述的發光二極體燈源裝置,其中,該散射粉體均勻分佈在鄰近第二透光結構的第一透光結構邊界區域內。
- 一種發光二極體燈源裝置,包括發光二極體光源,其改良在於:該發光二極體燈源裝置還包括設於該發光二極體光源的出光路徑上的透光結構和填充於透光結構內的散射粉體,該發光二極體光源收容於該散射粉體內。
- 如申請專利範圍第8項所述的發光二極體燈源裝置,其中,該透光結構和散射粉體均呈球狀,且該透光結構和散射粉體所處球體的半徑分別為R和r,r<R,該透光結構所在的球體與散射粉體所在的球體相內切,該透光結構的折射率為N1,且該折射率N1滿足關係:N1<R/﹙2r-R﹚。
- 如申請專利範圍第8項所述的發光二極體燈源裝置,其中,該發光二極體光源位於透光結構所處球體的球心與散射粉體所處球體的球心的連線上。
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- 2012-05-02 TW TW101115489A patent/TWI465671B/zh not_active IP Right Cessation
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US8921880B2 (en) | 2014-12-30 |
CN103375708B (zh) | 2015-10-28 |
US20130285094A1 (en) | 2013-10-31 |
TWI465671B (zh) | 2014-12-21 |
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