TW201337207A - Method of measuring height of projections or protrusions on article surface, and device therefor - Google Patents
Method of measuring height of projections or protrusions on article surface, and device therefor Download PDFInfo
- Publication number
- TW201337207A TW201337207A TW102103978A TW102103978A TW201337207A TW 201337207 A TW201337207 A TW 201337207A TW 102103978 A TW102103978 A TW 102103978A TW 102103978 A TW102103978 A TW 102103978A TW 201337207 A TW201337207 A TW 201337207A
- Authority
- TW
- Taiwan
- Prior art keywords
- protrusion
- height
- image
- article
- protrusions
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
Description
本發明係有關於計測物品面上之突起乃至突條之高度的方法及其裝置，特別是有關於拍攝如突出於太陽電池面上之電極般對象物與其背景反射率大為不同者且以圖像處理計測高度之方法及其裝置。 The present invention relates to a method and apparatus for measuring the height of protrusions and even protrusions on an object surface, and more particularly to photographing an object such as an electrode protruding from a surface of a solar cell, and a background reflectance thereof is greatly different and A method and apparatus for processing a measured height.
在太陽電池之製造階段，產生計測用以令形成於太陽電池表面之電極之高度在預定範圍者的高度之必要性。因此，一般凹凸表面之厚度測定之技術有使用接觸式之測微計、表面粗度計之手法。在此種接觸式者中，有形成為計測物品之瑕疵之原因，而有計測需要之時間增多之弱點。類似接觸式之手法有使用原子力顯微鏡(AFM)者，為此種情形時，電極高，而計測不易，又計測所需之時間增多。非接觸式計測手法有使用例如雷射變位計者，此時，亦是計測所需之時間增多。 In the manufacturing stage of the solar cell, it is necessary to measure the height of the electrode formed on the surface of the solar cell within a predetermined range. Therefore, the technique for measuring the thickness of a concave-convex surface generally has a contact micrometer and a surface roughness meter. Among such contact types, there is a reason for forming a flaw in the measurement item, and there is a weak point in which the time required for measurement is increased. In the case of a contact-like method, an atomic force microscope (AFM) is used. In this case, the electrode is high, the measurement is not easy, and the time required for measurement increases. For the non-contact measurement method, for example, a laser displacement gauge is used, and at this time, the time required for measurement is also increased.
對太陽電池等被檢查物進行表面形狀之檢查者例如記載於專利文獻1，此係使形成有太陽電池單元之電極之基板複數移動，在照明下，在複數位置，依據拍攝了基 板之圖像，檢測電極之金屬突起。藉此，可檢測如電極之金屬突起之缺陷，非計測突起或電極之高度，為檢測缺陷，在複數位置拍攝基板之過程是不可欠缺的，僅因此，計測便需要時間。 For example, in the case of examining the surface shape of an object to be inspected, such as a solar cell, the substrate in which the electrode of the solar cell unit is formed is moved in plural, and in the case of illumination, the base is photographed at a plurality of positions. The image of the plate detects the metal protrusion of the electrode. Thereby, it is possible to detect defects such as metal protrusions of the electrodes, and the height of the non-measurement protrusions or electrodes. In order to detect defects, the process of photographing the substrate at a plurality of positions is indispensable, and therefore, measurement takes time.
又，缺陷檢測裝置有記載於(專利文獻2)者。此係檢測鋼板、樹脂薄膜等片狀物體之表面之瑕疵等缺陷者，係以照明拍攝被檢查物而得之信號之處理檢查缺陷者。此時，藉將拍攝裝置之受光方向配置於將照明裝置之照射方向面對放線方向相同之側，可檢測細微缺陷，非測定缺陷等凸部之高度者。 Further, the defect detecting device is described in (Patent Document 2). In this case, a defect such as flaws in the surface of a sheet-like object such as a steel plate or a resin film is detected, and the defect is detected by a signal obtained by illuminating the object to be inspected. At this time, by arranging the light receiving direction of the imaging device on the side where the irradiation direction of the illumination device faces the same direction of the discharge, it is possible to detect the fine defect and the height of the convex portion such as the defect.
專利文獻1 日本專利公開公報2009-122036號 Patent Document 1 Japanese Patent Laid-Open Publication No. 2009-122036
專利文獻2 日本專利公開公報2002-5845號 Patent Document 2 Japanese Patent Laid-Open Publication No. 2002-5845
用以計測對象物品面上之細微突起乃至突條之高度的習知手法有在接觸式之測微計、表面粗度計等接觸式者中，於計測物品產生瑕疵之情形，而有計測需要時間之缺點，又，在雷射變位計等非接觸式者中，亦是計測需要時間者。因此，於計測對象物品面上之突起乃至突條之高度之際，為不於計測物品產生瑕疵，乃以非接觸式進行，又，要求減少計測所需之時間。 The conventional method for measuring the height of the protrusions on the surface of the object and even the height of the protrusions is in the case of a contact type micrometer or a surface roughness meter, etc., in the case where the measurement item is defective, and the measurement needs The shortcomings of time, in addition to the non-contact person such as laser displacement meter, are also those who need time. Therefore, when the height of the protrusion or the ridge on the surface of the object to be measured is measured, the flaw is not generated in the measurement item, and the time required for the measurement is required to be reduced.
本發明係為解決前述課題而發明者，本發明1之 計測物品面上之突起乃至突條之高度的方法係計測形成於表面之反射率低之物品面上的反射率高之細微突起乃至突條之高度的方法，其於對所載置之物品面拍攝光軸構成1~40°之範圍之角度且拍攝作為計測之對象之突起乃至突條的位置設置拍攝裝置，對前述物品面上之突起乃至突條對在物品面之法線，將照明光源配置於前述拍攝裝置側，在照明光下以前述拍攝裝置拍攝前述物品面，計測以拍攝所得之前述物品面上之突起乃至突條之圖像之相當於突起的高度方向之尺寸，藉運算進行下述動作，前述動作係從以計測所得之相當於突起之高度方向的尺寸與在前述設置之拍攝裝置之拍攝倍率，求出突起乃至突條之高度。 The present invention has been made to solve the above problems, and the present invention is The method of measuring the height of the protrusions on the surface of the article or even the height of the ridges is a method of measuring the height of the fine protrusions and the height of the protrusions formed on the surface of the article having a low reflectance on the surface, and the method of placing the objects on the surface The imaging optical axis is formed at an angle ranging from 1 to 40°, and the imaging device is set as a projection or a ridge of the object to be measured, and the illumination light source is applied to the normal of the object surface on the surface of the object or the protrusion on the surface of the object. Arranging on the side of the imaging device, the object surface is imaged by the imaging device under illumination light, and the size of the protrusion in the height direction of the image of the protrusion or the ridge on the surface of the object is measured, and the calculation is performed by calculation. In the operation described below, the height of the protrusion or the ridge is obtained from the size of the height direction corresponding to the protrusion obtained by the measurement and the imaging magnification of the imaging device provided above.
本發明2之計測物品面上之突起乃至突條之高度的方法係在本發明1中，於計測前述突起之圖像之相當於突起乃至突條之高度方向的尺寸之際，計數相當於在該圖像上之突起乃至突條之高度方向之方向的亮度達預定值以上之像素之數，依據此，求出相當於突起乃至突條之高度方向之尺寸。 The method of measuring the height of the protrusions on the surface of the article and the height of the ridges according to the second aspect of the present invention is the same as the method of measuring the size of the protrusions or the ridges in the height direction of the image of the protrusions. The number of pixels in the image on the image and even in the direction of the height direction of the ridges is equal to or greater than a predetermined value, and the size corresponding to the height direction of the protrusions or the ridges is obtained.
本發明3之計測物品面上之突起乃至突條之高度的方法係在本發明1或2中，前述拍攝裝置係設置於對所載置之物品面拍攝光軸構成3~10°之範圍的角度且拍攝作為計測之對象之突起乃至突條的位置者。 The method of measuring the height of the protrusions on the surface of the article and the height of the protrusions of the present invention is in the first or second aspect of the invention, wherein the imaging device is disposed in a range of 3 to 10 degrees from the optical axis of the object to be placed. The angle is taken and the position of the protrusion or even the protrusion of the object to be measured is taken.
本發明4之計測物品面上之突起乃至突條之高度的方法係計測形成於表面之反射率低之物品面上的反射率高之細微突起乃至突條之高度的方法，其係一面照射設定 成對所載置之物品面之雷射光束之照射角為1~40°之範圍的雷射，一面使雷射與物品面相對地移動，進行掃描，以光檢測部檢測前述突起乃至突條之散射光之強度，求出在前述裝置之過程所檢測出之散射光之強度分佈的峰值之寬度，而從該峰值之寬度求出前述突起乃至突條之高度。 The method for measuring the height of the protrusions on the surface of the article or the height of the ridges of the present invention 4 is a method of measuring the height of the fine protrusions and the height of the protrusions formed on the surface of the article having a low reflectance on the surface, a laser beam having an irradiation angle of 1 to 40° of a laser beam placed on a pair of objects is placed, and the laser is moved relative to the surface of the object to perform scanning, and the protrusion or even the protrusion is detected by the light detecting portion. The intensity of the scattered light is used to determine the width of the peak of the intensity distribution of the scattered light detected by the process, and the height of the protrusion or the ridge is obtained from the width of the peak.
本發明5之計測物品面上之突起乃至突條之高度的方法係在本發明1~3任一者中，其中前述物品面上之突起乃至突條係配設成突出於太陽電池面上之金屬製電極。 The method of measuring the height of the protrusions on the surface of the article and even the height of the protrusions of the present invention is the method of any one of the inventions 1 to 3, wherein the protrusions on the surface of the article or even the protrusions are arranged to protrude from the surface of the solar cell. Metal electrode.
本發明6之物品面上之突起乃至突條之高度的計測裝置係形成於表面之反射率低之物品面上之反射率高的細微突起乃至突條之高度的計測裝置，其包含有拍攝形成於所載置之物品面上之突起乃至突條之拍攝裝置、用以對以該拍攝裝置之拍攝取得之圖像進行圖像處理之圖像處理裝置、及照明所載置之物品面之照明光源；又，前述拍攝裝置係設置於對前述物品面拍攝光軸構成1~40°之範圍之角度且拍攝作為計測之對象之突起的位置，前述照明光源配置於對前述物品面上之突起乃至突條對在物品面之法線從前述拍攝裝置側照明前述物品面上之突起乃至突條之位置，前述圖像處理裝置計測以在前述拍攝裝置之拍攝所得之前述物品面上之突起乃至突條之圖像的相當於突起乃至突條之高度方向的尺寸，進行下述運算，前述運算係從相當於以計測所得之突起乃至突條之高度方向的尺寸與在前述設置之拍攝裝置之拍攝倍率，求出突起乃至突條之高度。 The measuring device for the height of the protrusions on the surface of the article of the present invention and the height of the ridges is a measuring device formed on the surface of the article having a low reflectance on the surface of the object having a high reflectance and a height of the ridge, and includes a photographing formation. An imaging device for protrusions and ridges on the surface of the article to be placed, an image processing device for image processing of an image obtained by shooting of the imaging device, and illumination of an object placed on the illumination Further, the imaging device is disposed at a position that forms an angle of 1 to 40° with respect to the optical axis of the object surface, and captures a projection as a target to be measured, and the illumination light source is disposed on a protrusion on the surface of the object. The ridges measure the position of the protrusions on the surface of the object from the side of the object on the surface of the object, and the image processing device measures the protrusions on the surface of the object obtained by the imaging device. The size of the image of the strip corresponds to the height of the protrusion or even the ridge, and the calculation is performed from the projection corresponding to the projection to the ridge. The height in the height direction and the imaging magnification of the above-described imaging device are used to determine the height of the protrusion or the ridge.
本發明7之物品面上之突起乃至突條之高度的計 測裝置係在本發明6中，在前述圖像處理裝置中，計數相當於在前述圖像上之突起乃至突條之高度方向之方向的亮度達預定值以上之像素之數，依據所計數之像素數，求出前述突起乃至突條之圖像之相當於突起乃至突條之高度方向的尺寸。 The height of the protrusions on the surface of the article of the present invention and even the height of the ridges According to a sixth aspect of the invention, in the image processing device, the number of pixels corresponding to a luminance in a direction in a height direction of the protrusion or the ridge of the image is a predetermined value or more, and is counted according to the counted The number of pixels is obtained by determining the size of the protrusion or even the image of the ridge in the height direction of the protrusion or the ridge.
本發明8之物品面上之突起乃至突條之高度的計測裝置係在本發明6或7中，前述拍攝裝置設置於對所載置之物品面拍攝光軸構成3~10°之範圍之角度且拍攝作為計測之對象之突起乃至突條的位置者。 The measuring device of the protrusion on the surface of the article of the present invention and even the height of the ridge is in the sixth or seventh aspect of the invention, and the imaging device is disposed at an angle of 3 to 10° to the optical axis of the object to be placed. And photographing the position of the protrusion or even the protrusion of the object to be measured.
本發明9之物品面上之突起乃至突條之高度之計測裝置係形成於表面之反射率低之物品面上之反射率高的細微突起乃至突條之高度之計測裝置，其特徵在於包含有台部、雷射、光檢測部、掃描控制部、及運算處理裝置，該台部係載置計測對象之物品者；該雷射係將雷射光束照射成對載置於該台上之物品面照射角形成1~40°之範圍者；該光檢測部係於照射雷射光束時，接收物品面上之突起乃至突條之散射光而檢測散射光強度者；該掃描控制部係用以控制對前述物品面上照射雷射時使雷射與物品相對移動之掃描者；該運算處理裝置係處理以前述光檢測部取得之散射光強度之數據者；又，前述運算處理裝置一面使前述雷射與物品相對地移動，一面求出照射雷射光束時以前述光檢測部取得之散射光之強度分佈之峰值的寬度，進行從該峰值之寬度求出前述突起乃至突條之高度的運算。 The measuring device for the height of the protrusions on the surface of the article of the present invention and the height of the ridges is a measuring device which is formed on the surface of the article having a low reflectance on the surface and has a high reflectance and a height of the ridge, and is characterized in that it includes a table, a laser, a light detecting unit, a scanning control unit, and an arithmetic processing device for placing an object to be measured; the laser beam irradiating the laser beam with the pair of articles placed on the table The surface illumination angle is formed in a range of 1 to 40°; the light detecting portion is configured to receive the scattered light of the protrusions on the surface of the object or even the protrusions to detect the intensity of the scattered light when the laser beam is irradiated; the scanning control unit is used for detecting the intensity of the scattered light; Controlling a scanner that relatively moves the laser and the article when the surface of the article is irradiated with a laser; the arithmetic processing device processes data of the intensity of the scattered light obtained by the light detecting unit; and the arithmetic processing device performs the foregoing The laser is moved relative to the article, and the width of the peak of the intensity distribution of the scattered light obtained by the light detecting unit when the laser beam is irradiated is obtained, and the protrusion is obtained from the width of the peak. The operation to the height of the spur.
本發明10之物品面上之突起乃至突條之高度的 計測裝置係在本發明6~9任一者中，前述物品面上之突起乃至突條係配設成突出於太陽電池面上之金屬製電極。 The protrusion on the surface of the article of the present invention and even the height of the ridge In the measuring device according to any one of the sixth to ninth aspects of the present invention, the protrusions on the surface of the article or the ridges are arranged to protrude from the metal electrodes on the surface of the solar cell.
在本發明中，計測形成於表面反射率低之物品面上之反射率高之細微突起乃至突條的高度之際，以對在特定之拍攝位置、照明光下所拍攝之圖像之圖像處理，求出細微之突起乃至突條之高度，或者，一面將雷射照射於物品面，一面使雷射與物品面相對地移動，進行掃描，一面從以光檢測部檢測突起乃至突條之散射光之強度而得的散射光之強度分佈之峰值的寬度，求出突起乃至突條之高度，藉此，可以非接觸以良好效率計測高度。又，藉此，為太陽電池等大量生產之製品時，亦可如以線內計測高度般，進行迅速之計測。 In the present invention, an image of an image taken at a specific imaging position and illumination light is formed when measuring the height of the fine protrusion or the height of the protrusion formed on the surface of the article having a low surface reflectance. Processing, determining the height of the protrusions or even the protrusions, or irradiating the laser surface to the surface of the object while moving the laser surface relative to the surface of the object, scanning the surface, and detecting the protrusion or the ridge from the light detecting portion The width of the peak of the intensity distribution of the scattered light obtained by the intensity of the scattered light is obtained by determining the height of the protrusion or the ridge, whereby the height can be measured with good efficiency without contact. Further, in the case of a mass-produced product such as a solar battery, rapid measurement can be performed by measuring the height in the line.
1‧‧‧太陽電池 1‧‧‧Solar battery
2‧‧‧背面電池 2‧‧‧Back battery
3‧‧‧P+型層 3‧‧‧P+ layer
4‧‧‧p型層 4‧‧‧p-type layer
5‧‧‧n型層 5‧‧‧n-type layer
6‧‧‧反射防止膜 6‧‧‧Anti-reflection film
10‧‧‧指狀電極 10‧‧‧ finger electrode
11‧‧‧匯流排電極 11‧‧‧ Bus bar electrode
20‧‧‧照相機 20‧‧‧ camera
30‧‧‧圖像處理裝置 30‧‧‧Image processing device
40‧‧‧照明光源 40‧‧‧Light source
50‧‧‧雷射 50‧‧‧Laser
60‧‧‧光檢測部 60‧‧‧Light Inspection Department
70‧‧‧運算處理部 70‧‧‧Operation Processing Department
BR‧‧‧亮度 BR‧‧‧Brightness
B0‧‧‧最大亮度 B 0 ‧‧‧Maximum brightness
Bth‧‧‧閾值 B th ‧‧‧ threshold
d‧‧‧寬度 ‧‧‧Width
H‧‧‧主光部 H‧‧‧Main Light Department
L‧‧‧照明光 L‧‧‧Lights
OA‧‧‧拍攝光軸 OA‧‧‧ shooting optical axis
S‧‧‧峰值寬度 S‧‧‧peak width
h‧‧‧高度 H‧‧‧height
w‧‧‧寬度 w‧‧‧Width
X‧‧‧方向 X‧‧‧ direction
X1，X2‧‧‧X方向座標 X 1 , X 2 ‧‧‧X direction coordinates
α，θ‧‧‧角度 ,, θ‧‧‧ angle
圖1(a)係以切下太陽電池之一部份之形式顯示之立體圖，圖1(b)係於圖1(a)之A-A線上截取之一部份的截面圖。 Fig. 1(a) is a perspective view showing a portion of a solar cell cut away, and Fig. 1(b) is a cross-sectional view taken along line A-A of Fig. 1(a).
圖2(a)係1個電極之截面係矩形時之截面圖，圖2(b)係1個電極之截面為梯形時之截面圖。 Fig. 2(a) is a cross-sectional view showing a cross section of one electrode in a rectangular shape, and Fig. 2(b) is a cross-sectional view showing a cross section of one electrode in a trapezoidal shape.
圖3係顯示本發明之計測太陽電池之電極之高度的裝置之形態的概略圖。 Fig. 3 is a schematic view showing the form of the apparatus for measuring the height of the electrode of the solar cell of the present invention.
圖4係顯示以圖3之裝置之形態之照相機拍攝之電極之圖像的圖。 Fig. 4 is a view showing an image of an electrode photographed by a camera in the form of the apparatus of Fig. 3.
圖5係顯示對圖4之圖像之主光部之寬度方向的座標之 亮度值之圖。 Figure 5 is a diagram showing the coordinates of the width direction of the main light portion of the image of Figure 4 A graph of brightness values.
圖6(a)係顯示顯示決定閾值之形態之一例的電極之圖像之亮度分佈的圖表，圖6(b)係顯示從圖6(a)之亮度分佈求出之二次微分的圖表。 Fig. 6(a) is a graph showing a luminance distribution of an image of an electrode showing an example of a threshold value, and Fig. 6(b) is a graph showing a second derivative obtained from the luminance distribution of Fig. 6(a).
圖7(a)係於為截面係矩形之電極時就拍攝光軸之傾斜角之影響作說明的圖，圖7(b)係於為截面係梯形之電極時就拍攝光軸之傾斜角之影響作說明的圖。 Fig. 7(a) is a view for explaining the influence of the tilt angle of the photographing optical axis when the electrode is a rectangular cross section, and Fig. 7(b) is the tilt angle of the photographing optical axis when the electrode is a trapezoidal cross section. A diagram that affects the description.
圖8係顯示本發明之測定太陽電池單元之電極之高度之裝置的另一形態之概略圖。 Fig. 8 is a schematic view showing another embodiment of the apparatus for measuring the height of the electrode of the solar battery cell of the present invention.
圖9係顯示在圖8於太陽電池面上照射雷射而掃描之際所測定之散射光之強度分佈的圖表。 Fig. 9 is a graph showing the intensity distribution of scattered light measured when the laser is irradiated on the surface of the solar cell of Fig. 8 and scanned.
圖10係顯示從圖9之散射光之強度分佈求出之電極之高度的圖表。 Fig. 10 is a graph showing the height of the electrode obtained from the intensity distribution of the scattered light of Fig. 9.
圖11係從照射雷射之側觀看太陽電池面上之電極之配置的圖。 Fig. 11 is a view showing the arrangement of electrodes on the surface of the solar cell viewed from the side irradiated with the laser.
就本發明之計測物品面之細微突起乃至突條之形狀尺寸的方法及其裝置之形態作說明。物品作為代表者考慮太陽電池，就計測配設於太陽電池面上之突條乃至構成突條之形狀之指極電極之高度的情形作說明。 The method of measuring the fine protrusions of the surface of the article and the shape and size of the ridges of the present invention and the form of the apparatus will be described. The article as a representative considers the solar cell, and measures the height of the ridge formed on the surface of the solar cell or even the height of the finger electrode constituting the shape of the ridge.
圖1(a)係以切下太陽電池之一部份之形態以立體圖顯示者。太陽電池1以多層半導體構成，從下側以背面電極2、P+型層3、p型層4、n型層5之順序積層，其上側以 反射防止膜6被覆。各層之導電型亦可為與此例不同者。 Fig. 1(a) is a perspective view showing a part of a solar cell cut out. The solar cell 1 is composed of a multilayer semiconductor, and is laminated in the order of the back surface electrode 2, the P+ type layer 3, the p type layer 4, and the n type layer 5 from the lower side, and the upper side thereof is The anti-reflection film 6 is covered. The conductivity type of each layer may also be different from this example.
p型層4之上面側以蝕刻將數百nm左右之大小的許多細微凹凸部形成一樣，積層於其上側之n型層5、反射防止膜6亦同樣地形成為許多細微凹凸部分佈成一樣之形狀。 The upper side of the p-type layer 4 is formed by etching a plurality of fine uneven portions having a size of about several hundred nm, and the n-type layer 5 and the anti-reflection film 6 laminated on the upper side are also formed into a plurality of fine uneven portions. shape.
許多細帶狀指狀電極10平行地配設，下端側到達n型層5。又，於垂直相交於指狀電極10之方向配設有複數較此寬度大之匯流排電極11。指狀電極10、匯流排電極11、背面電極2以含有銀、銅、鎳、鋁等之金屬以網版印刷法等形成。指狀電極10、匯流排電極11之配設形態除了例示者外，亦考慮各種。圖1(b)係於圖1(a)所示之太陽電池1之A-A線上截取之一部份的截面圖，以截面顯示各層之結構及指狀電極。 A plurality of thin strip-shaped finger electrodes 10 are arranged in parallel, and the lower end side reaches the n-type layer 5. Further, a plurality of bus bar electrodes 11 having a larger width than this are disposed in a direction perpendicularly intersecting the finger electrodes 10. The finger electrode 10, the bus bar electrode 11, and the back surface electrode 2 are formed by a screen printing method or the like using a metal containing silver, copper, nickel, aluminum or the like. The arrangement of the finger electrodes 10 and the bus bar electrodes 11 is also various in addition to those exemplified. Fig. 1(b) is a cross-sectional view showing a portion taken along line A-A of the solar cell 1 shown in Fig. 1(a), showing the structure of each layer and the finger electrodes in cross section.
如圖1(a)、圖1(b)所示之太陽電池1中，指狀電極10、匯流排電極11形成為從以反射防止膜6被覆之電池面突出至上方之形狀，製品必須以電極之高度為規定值，因此，在製造階段，需計測電極之高度。 In the solar cell 1 shown in Fig. 1 (a) and Fig. 1 (b), the finger electrode 10 and the bus bar electrode 11 are formed in a shape protruding from the battery surface covered with the anti-reflection film 6 to the upper side, and the product must be The height of the electrode is a predetermined value, so the height of the electrode needs to be measured at the manufacturing stage.
圖2(a)顯示1個電極10之截面形態，太陽電池之上面側之較反射防止膜6突出的部份形成寬度w、高度h之矩形形狀。圖2(b)顯示電極10之截面形狀形成為梯形之情形。該等截面形狀藉預先進行取樣調查等確認在製品之預定製程如何形成。 2(a) shows a cross-sectional form of one electrode 10, and a portion of the upper surface of the solar cell that protrudes from the anti-reflection film 6 has a rectangular shape of a width w and a height h. Fig. 2(b) shows a case where the cross-sectional shape of the electrode 10 is formed in a trapezoidal shape. The cross-sectional shape is confirmed by a predetermined sampling investigation or the like to confirm how the predetermined process of the product is formed.
就如指狀電極10之突起乃至突條之高度的計測以下說明。計測手法係就使用以拍攝裝置拍攝經照射照明 光之太陽電池面而得之圖像而求出電極的高度之例及從於太陽電池照射雷射而檢測在電極之散射光而得的光強度分佈求出電極之高度之例作說明。 The following is a description of the measurement of the height of the protrusions of the finger electrodes 10 and the ridges. The measurement method uses the camera to shoot the illuminated illumination. An example of determining the height of the electrode by the image of the solar cell surface of the light, and an example of determining the height of the electrode from the light intensity distribution obtained by detecting the scattered light of the electrode from the laser irradiation of the solar cell.
(1)圖像之拍攝之高度的計測 (1) Measurement of the height of the image taken
圖3係顯示以圖像之拍攝測定突出至太陽電池1面上之指狀電極之高度之裝置的形態之概略圖。太陽電池1載置於水平之載置台(圖中未示)上，拍攝太陽電池面之照相機20設置於預定位置，而對太陽電池1之面，拍攝光軸構成角度θ。照相機20係以CCD等拍攝元件拍攝者，拍攝透鏡使用焦點深度淺者。 Fig. 3 is a schematic view showing a form of a device for measuring the height of a finger electrode protruding to the surface of the solar cell 1 by image capturing. The solar cell 1 is placed on a horizontal mounting table (not shown), and the camera 20 that photographs the solar cell surface is placed at a predetermined position, and the imaging optical axis forms an angle θ with respect to the surface of the solar cell 1. The camera 20 is a photographer who photographs an element such as a CCD, and the imaging lens uses a shallow depth of focus.
以照相機20之拍攝取得之圖像信號移送至以纜線連接之圖像處理裝置30，進行圖像處理。40係拍攝時將照明光L照射於太陽電池1面之照明光源，將照明光源40設置成照明光L其基準方向對太陽電池1面之法線，在照相機20側。 The image signal obtained by the camera 20 is transferred to the image processing device 30 connected by a cable to perform image processing. In the 40-series imaging, the illumination light L is applied to the illumination source on the surface of the solar cell, and the illumination light source 40 is set such that the reference direction of the illumination light L is normal to the surface of the solar cell 1 on the side of the camera 20.
如此，藉設置照相機20、照明光源40，在照明光下，拍攝太陽電池1，可獲得如圖4之圖像。因照相機20之拍攝透鏡之焦點深度淺，可獲得僅對焦於在照明光下之特定之1個電極的圖像作為主光部H，其前後之電極未顯現於圖像中，又，由於太陽電池1面之上側之反射防止膜有細微之凹凸，反射光光量亦少，基本上往與照相機20相反之側之方向反射，故反射光幾乎不到照相機20側。因此，作為圖4之電極之圖像之主光部以外形成為暗之背景部。 Thus, by providing the camera 20 and the illumination light source 40, the solar cell 1 is photographed under illumination light, and an image as shown in FIG. 4 can be obtained. Since the focal depth of the photographing lens of the camera 20 is shallow, an image focusing only on a specific one of the electrodes under the illumination light can be obtained as the main light portion H, the electrodes before and after the image are not present in the image, and The anti-reflection film on the upper side of the battery 1 has minute irregularities, and the amount of reflected light is small, and is substantially reflected in the direction opposite to the camera 20, so that the reflected light is hardly on the side of the camera 20. Therefore, it is formed as a dark background portion other than the main light portion of the image of the electrode of FIG.
在以圖像為基礎下，正確地進行計測上，需形成 為太陽電池面與電極之對比高之圖像，照明光源40指定可獲得此種對比高者。電極係金屬製，不論何種波長之光皆可反射，而電池因多為吸收長波長光者，故可為紅色系光。又，亦根據電池表面之反射率之角相依性，為提高照明光之指向性，宜以準直透鏡形成模擬平行光。 On the basis of the image, the measurement must be carried out correctly. For images with a high contrast between the solar cell surface and the electrodes, the illumination source 40 specifies that such contrast is obtained. The electrode is made of metal, and light can be reflected regardless of the wavelength of the light. Since the battery absorbs long-wavelength light, it can be red light. Further, depending on the angular dependence of the reflectance of the surface of the battery, in order to improve the directivity of the illumination light, it is preferable to form the pseudo-parallel light by the collimator lens.
藉求出在圖4之圖像上之主光部H之寬度，可獲得電極之高度。圖4之圖像形成為主光部H與背景部之幾乎2值之圖像，實際上，在交界部份，因某程度之坡度，亮度變化，垂直相交於主光部之方向(在圖4為橫方向)的方向(寬度方向)係對應於電極之高度之方向，當令此為X方向，顯示在X方向之亮度分佈時，形成如圖5。當令縱方向為亮度BR時，主光部之大部份形成為最大亮度B0，在其寬度之兩側，因急遽之坡度，亮度增大、減少。 The height of the electrode can be obtained by finding the width of the main light portion H on the image of Fig. 4. The image of Fig. 4 forms an image of almost two values of the main light portion H and the background portion. In fact, at the boundary portion, the brightness changes and the direction perpendicularly intersects the main light portion due to a certain degree of slope (in the figure) The direction (width direction) of 4 in the lateral direction corresponds to the direction of the height of the electrode, and when this is the X direction, the luminance distribution in the X direction is displayed, as shown in FIG. 5. When the longitudinal direction is the brightness BR, most of the main light portion is formed to have a maximum brightness B 0 , and on both sides of the width, the brightness is increased and decreased due to the steep slope.
從此點，預先決定亮度之閾值Bth，令亮度BR形成為閾值Bth之處之X方向座標為X1、X2，令此X1、X2間之距離為圖4之電極之圖像的寬度d為妥當。X1、X2間之拍攝畫面上之距離d係使用計數超過相當於X1、X2之圖像之間的像素數、即閾值Bth之像素數而得的像素數之值而求出。關於為拍攝而設置之照相機之拍攝元件，像素之尺寸、像素間之距離為既定者，又，從所設置之照相機、作為被拍攝體之電極之位置關係，照相機之拍攝光學系統之成像的倍率亦為既定值，故可從所得之電極圖像之寬度d與成像之倍率，求出相當於電極之寬度之值。 From this point, the predetermined threshold luminance value B th, so that the luminance BR formed in the X-direction coordinates of the threshold value B th sum of X 1, X 2, so that this X 1, distance 2 the X image electrodes 4 of The width d is appropriate. X 1, X distance d based on the use of two capture screen count exceeds the number of pixels between the images corresponding to X 1, X 2, namely the threshold value B th of the number of pixels of obtained values of the number of pixels determined . Regarding the imaging element of the camera provided for shooting, the size of the pixel and the distance between the pixels are predetermined, and the magnification of the imaging of the imaging optical system of the camera from the positional relationship between the camera and the electrode as the subject is set. Since it is also a predetermined value, the value corresponding to the width of the electrode can be obtained from the width d of the obtained electrode image and the magnification of the image.
實際上於決定閾值之際，因適合實測之形式，有 數個決定方式，舉例言之，為對最大亮度B0之比率為幾%之值、從最小亮度達到幾%以上之值、或為半寬度。又，在電池之表面側(電極之上側)與界面側(電極之下側)，亮度之變化不同，在界面側，有較表面側平滑之亮度變化之情形，故有在各端側設閾值規定不同之基準為適當的情形。 In fact, when determining the threshold, it is suitable for the form of actual measurement. The number of determination methods is, for example, a value of a few percent for the maximum luminance B0, a value of a few percent or more from the minimum luminance, or a half width. Further, on the surface side (the upper side of the electrode) and the interface side (the lower side of the electrode) of the battery, the change in luminance is different, and on the interface side, there is a case where the brightness on the surface side is smoothly changed, so that a threshold is set at each end side. It is appropriate to specify different benchmarks.
又，其他求出至子像素之方法有求出二次微分達0之點(零交叉)為有效者。關於此，參照圖6(a)、圖6(b)來說明。圖6(a)係於橫座標採用像素而顯示包含在實測所得之太陽電池面上之指狀電極之部份的圖像之亮度分佈。圖6(b)係以(a)之亮度分佈為基礎且於橫座標採用像素而顯示二次微分者。二次微分0對應於(a)之圖表之反曲點，而可多於2個，相當於如圖4之圖像之主光部之寬度者採用兩端側之2個零交叉點，將此作為各側之閾值。 Further, other methods of obtaining the sub-pixels are effective in determining that the second derivative reaches zero (zero crossing). This will be described with reference to FIGS. 6(a) and 6(b). Fig. 6(a) shows the luminance distribution of an image of a portion of the finger electrode included on the surface of the solar cell actually measured, using pixels in the abscissa. Fig. 6(b) shows the second derivative based on the luminance distribution of (a) and using pixels in the abscissa. The second derivative 0 corresponds to the inflection point of the graph of (a), and may be more than two, which is equivalent to the width of the main light portion of the image of FIG. 4, using two zero-crossing points on both end sides, This is used as the threshold for each side.
求出作為如圖4之圖像而得之電極的高度之際，計數像素數而求出相當於圖像之主光部之寬度的量，圖像之主光部所佔之範圍非常小時，對畫面全體進行圖像處理之操作實際問題多為無效率。此時，進行圖像處理之際，非以圖像全體為對象，而選擇作為計測對象之主光部附近，或者，亦可依情形，選擇邊緣位置之部份，進行圖像處理。關於該等，可以與穩健性之兼顧，適宜選擇來實施。 When the height of the electrode obtained as the image of FIG. 4 is obtained, the number of pixels is counted to obtain the amount corresponding to the width of the main light portion of the image, and the range of the main light portion of the image is extremely small. The actual problem of performing image processing on the entire screen is mostly inefficient. In this case, when the image processing is performed, the vicinity of the main light portion to be measured is selected instead of the entire image, or the edge portion may be selected as appropriate to perform image processing. Regarding these, it is possible to implement both the stability and the compatibility.
為不知像素之尺寸、像素間之距離之照相機時，為求出相當於電極之寬度之值，將標準尺之刻度配置成與以與照相機之位置關係拍攝之電極之位置相同的位置，以照相機拍攝，將在標準尺之刻度之圖像上的尺寸記憶於記 憶機構，進行對比以拍攝所得之圖像上之電極之寬度與標準尺的刻度之運算。此時，在圖像上之長度亦可藉使用像素數之計數而得。 In the case of a camera that does not know the size of the pixel or the distance between the pixels, in order to obtain a value corresponding to the width of the electrode, the scale of the standard ruler is placed at the same position as the position of the electrode photographed in the positional relationship with the camera, and the camera is used. Shoot, the size of the image on the scale of the standard ruler is remembered Recall the mechanism and compare it to the width of the electrode on the image taken and the scale of the standard ruler. At this time, the length on the image can also be obtained by counting the number of pixels.
在測定圖3所示之指狀電極之高度之裝置的形態中，太陽電池之面與照相機之拍攝光軸之角度θ小，以拍攝所得之圖像之寬度d實質可謂切合太陽電池上之電極之高度者，實際上，此角度θ若非那麼小，在圖像上之寬度d便無法對應於電極之寬度。 In the form of the apparatus for measuring the height of the finger electrodes shown in FIG. 3, the angle θ of the surface of the solar cell and the photographing optical axis of the camera is small, and the width d of the image obtained by the photographing is substantially equivalent to the electrode on the solar cell. The height, in fact, if the angle θ is not so small, the width d on the image cannot correspond to the width of the electrode.
關於此點，與圖7(a)相關而說明時，矩形斜線部份顯示電極之截面，形成為可拍攝PQ之側之側面的範圍。由於上邊側係照明光之反射光不朝向照相機側，故對拍攝圖像無益。由於照相機之拍攝光軸對太陽電池之面構成角度θ，故拍攝之部份之高度係相當於垂直於拍攝光軸之方向之部份的大小D、即h‧cos θ。此值係當θ小，便幾乎為1，當θ為某程度之大小時，需令將如上述求出之高度進一步為1/cos θ倍而補正者為高度。 In this regard, when explained in relation to Fig. 7(a), the rectangular hatched portion shows the cross section of the electrode, and is formed as a range in which the side of the side of the PQ can be photographed. Since the reflected light of the upper side illumination light does not face the camera side, it is not useful for capturing an image. Since the photographing optical axis of the camera forms an angle θ with respect to the surface of the solar cell, the height of the photographed portion corresponds to the size D of the portion perpendicular to the direction of the photographing optical axis, that is, h‧ cos θ. This value is almost 1 when θ is small, and when θ is a certain degree, the height obtained as described above needs to be further 1/cos θ times and the correction is height.
如此，將照相機之拍攝光軸對太陽電池之面傾斜之角度θ僅可能縮小在要求高度上亦可謂佳，當θ非常小、幾乎為0時，為在圖3之測定形態可看見，而於複數電極在前後時，因較作為對象之電極靠照相機側之電極遮蔽拍攝光一部份，而無法進行正確之測定。又，因當θ增大時，於拍攝畫面亦取入電極之上面之反射光，僅電極之側面之圖像無法看見，故關於θ，有上限。如此，作為對太陽電池面之拍攝光軸之角度適當的範圍有限，實際上應為 1~40°之範圍，較佳為3~10°之範圍。 Thus, the angle θ at which the camera optical axis of the camera is tilted toward the surface of the solar cell is only likely to be reduced at the required height. When θ is very small and almost 0, it is visible in the measurement form of FIG. 3, and When the plurality of electrodes are in front and rear, a part of the photographing light is blocked by the electrode on the camera side as the electrode of the object, and the correct measurement cannot be performed. Further, when θ is increased, the reflected light on the upper surface of the electrode is taken in the imaging screen, and only the image on the side surface of the electrode is not visible. Therefore, there is an upper limit on θ. Thus, as a proper range for the angle of the optical axis of the solar cell surface, it should be The range of 1 to 40° is preferably in the range of 3 to 10°.
圖7(b)係就電極之截面非矩形而如圖2(b)般形成梯形且側面對在太陽電池面之法線傾斜時之高度之計測說明的圖。當令梯形之側面構成為法線之角度為α時，於α>θ時，相當於垂直於拍攝光軸之方向之部份的大小D係PQ之長度之cos(α-θ)倍，高度h係PQ之cos α倍，故相對於以拍攝作為相當於大小D者之圖像而得之高度，實際之高度h為cos α/cos(α-θ)倍。因而，進行令從如前述拍攝而得之圖像求出之高度為cos α/cos(α-θ)倍之運算上之操作為佳。為α<θ時，當同樣地考量時，實際之高度h係令從拍攝而得之圖像求出之高度為cos α/cos(α-θ)倍為佳。關於電極之截面為梯形時之側面對太陽電池面之法線構成之角度α，如前述，預先以取樣等求出。 Fig. 7(b) is a view for explaining the measurement of the height when the cross section of the electrode is not rectangular and is trapezoidal as shown in Fig. 2(b) and the side surface is inclined with respect to the normal line of the solar cell surface. When the angle of the side surface of the trapezoid is assumed to be α, when α>θ, the size corresponding to the portion perpendicular to the direction of the optical axis is the cos (α-θ) times the length of the portion PQ, and the height h Since the cos of the PQ is α times, the actual height h is a cos α/cos (α - θ) times with respect to the height obtained by photographing the image corresponding to the size D. Therefore, it is preferable to perform an arithmetic operation in which the height obtained from the image taken as described above is calculated as cos α/cos (α - θ) times. When α < θ, when the same is considered, the actual height h is preferably such that the height obtained from the captured image is cos α / cos (α - θ) times. The angle α of the side surface of the electrode when the cross section of the electrode is trapezoidal to the normal line of the solar cell surface is obtained by sampling or the like as described above.
計測高度之對象物品面上之突起乃至突條係與太陽電池之電極相關而說明，本發明之計測手法不限於太陽電池之電極。一般物品面上之細微之突起乃至突條之高度為計測的對象，而條件係拍攝下述圖像，前述圖像係突起部乃至突條部係金屬等材質或具有金屬光澤者且物品之另一面係反射率低者或形成為粗面狀且作為計測對象之突起部乃至突條部具有相對於其他部份高之對比。 The projections on the surface of the object on which the height is measured and the ridges are related to the electrodes of the solar cell, and the measurement method of the present invention is not limited to the electrodes of the solar cell. The fine protrusions on the surface of the general object and even the height of the ridges are the objects to be measured, and the condition is to take an image in which the image is a protrusion or a metal such as a rib, or has a metallic luster and the article is another. The one side has a low reflectance or is formed into a rough surface, and the projections and the ridge portions which are the measurement targets have a high contrast with respect to the other portions.
又，計測高度之對象物品面上之突起乃至突條係太陽電池面上之指狀電極時，為適合計測高度10μm以上者、特別是30~40μm者之範圍者，上限係200μm左右。 In addition, when the projection on the surface of the object of the height is measured or the finger electrode on the surface of the solar cell is measured, it is suitable for a range of 10 μm or more, particularly 30 to 40 μm, and the upper limit is about 200 μm.
拍攝之照相機需為具有可在關於如指狀電極之 細微突起乃至突條之圖像上識別像之解析度，解析度最低亦要有10μm/dot，較佳可為1~2μm/dot之範圍。若為0.5μm/dot以下係光波長以下，而認為不易檢測。又，在子像素之想法方面，即使每像素之解析度為1μm左右，亦可求出至子像素之突起之高度。 The camera to be photographed needs to be available in relation to, for example, finger electrodes The resolution of the image on the image of the microprotrusions and even the ridges has a resolution of at least 10 μm/dot, preferably 1 to 2 μm/dot. If it is 0.5 μm/dot or less below the wavelength of the light, it is considered to be difficult to detect. Further, in the idea of the sub-pixel, even if the resolution per pixel is about 1 μm, the height of the protrusion to the sub-pixel can be obtained.
在圖3所示之計測太陽電池之電極之高度的裝置中，例示拍攝電池面之照相機係使用拍攝關於圖4所示之電極之畫面的一般使用之拍攝裝置者，在計測高度上，未必需拍攝如圖4之畫面全體。進行圖像處理之際，非以圖像全體為對象，而選擇作為計測對象之主光部附近，或者關於可依情形，選擇邊緣位置之部份，進行圖像處理已前述，由於電池面之拍攝機構只要為可獲得用以計測高度之圖像資料即可，故在製程中以線內計測電極之高度時，以設定成拍攝對形成如圖4之電極之長度方向垂直相交之方向之線狀部份的線型感測器拍攝，取得圖像資料，藉此，亦可以前述之圖像處理，計測電極之高度。 In the apparatus for measuring the height of the electrode of the solar cell shown in FIG. 3, the camera that photographs the battery surface is used as a general-purpose imaging device for taking a picture of the electrode shown in FIG. 4, and it is not necessary to measure the height. Take the picture as shown in Figure 4. When image processing is performed, it is not necessary to select the vicinity of the main light portion to be measured, or the portion of the edge position can be selected depending on the situation, and image processing has been performed as described above. The photographing mechanism only needs to obtain the image data for measuring the height. Therefore, when the height of the electrode is measured in the line during the process, the line is set to be perpendicular to the direction in which the longitudinal direction of the electrode formed in FIG. 4 intersects. The line type sensor is photographed to obtain image data, and the height of the electrode can also be measured by the image processing described above.
如此，拍攝電池面之手段一般係具有CCD、CMOS等拍攝元件之照相機，不限於所謂拍攝畫面之面型感測器，亦可使用一維拍攝元件之線型感測器式拍攝機構。 As described above, the means for photographing the battery surface is generally a camera having an imaging element such as a CCD or a CMOS, and is not limited to a surface sensor of a so-called imaging screen, and a linear sensor type imaging mechanism of a one-dimensional imaging element can also be used.
(2)散射光之檢測之高度的計測 (2) Measurement of the height of the detected light
圖8係顯示以散射光之檢測測定突出至載置於台部之太陽電池1之面上之指狀電極的高度之裝置之形態的概略圖。50係對太陽電池1之面於上側構成小角度θ而照射雷射光束之雷射，60係檢測在經照射雷射光束之指狀電極之散 射光之強度的以發光二極體等構成之光檢測部，70係將業經以光檢測部60檢測之散射光之強度數據進行運算處理而求出電極之高度的運算處理部。再者，雖圖中未示，但具有用以使載置太陽電池1之台部5與雷射50及光檢測部60相對地(於箭號方向)移動之掃描控制部。 Fig. 8 is a schematic view showing a state in which the height of the finger electrodes protruding to the surface of the solar cell 1 placed on the stage is measured by the detection of scattered light. The 50 series is a laser that irradiates a laser beam with a small angle θ on the upper side of the solar cell 1, and the 60 system detects the dispersion of the finger electrode of the irradiated laser beam. In the light detecting unit configured by the light emitting diode or the like, the light detecting unit that performs the arithmetic processing by the intensity data of the scattered light detected by the light detecting unit 60 is used to obtain the height of the electrode. Further, although not shown, the scanning control unit for moving the table portion 5 on which the solar battery 1 is placed, the laser 50 and the light detecting portion 60 (in the direction of the arrow) is provided.
對太陽電池1之雷射50之雷射光束的照射角θ為1~40°之範圍之角度為佳，以3~10°為較佳。在高度測定時為一定。以發光二極體等構成之光檢測部60係作為接收在電極之散射光之位置而配置於垂直於太陽電池1面之方向或較其靠雷射50之側。在照射雷射光束之狀態下，在圖8於箭號之方向，使載置太陽電池1之台部移動掃描，此時，以光檢測部60檢測散射光之強度而取得資料。橫亙太陽電池1之整面進行此種掃描，將所得之散射光強度之數據進行運算處理，藉此，求出電極之高度。 It is preferable that the irradiation angle θ of the laser beam of the laser light 50 of the solar cell 1 is in the range of 1 to 40°, preferably 3 to 10°. It is constant at the time of height measurement. The light detecting unit 60 configured by a light-emitting diode or the like is disposed in a direction perpendicular to the surface of the solar cell 1 or a side closer to the laser 50 as a position at which the scattered light of the electrode is received. In the state in which the laser beam is irradiated, the stage on which the solar cell 1 is placed is moved and scanned in the direction of the arrow in Fig. 8. At this time, the light detecting unit 60 detects the intensity of the scattered light and acquires the data. This scanning is performed on the entire surface of the solar cell 1 and the obtained data of the scattered light intensity is subjected to arithmetic processing to determine the height of the electrode.
橫亙太陽電池1之整面來掃瞄雷射光束之際，採下述形態，前述形態係先進行垂直於圖8之面之方向的掃描，之後，進行箭號方向之掃描，因縮短掃描所需之時間而有利。此時，在旋轉之多角鏡之面反射來自雷射50之雷射光束，照射太陽電池1之面，以多角鏡之旋轉，進行垂直於圖8之面之方向的掃描。藉取多角鏡之反射點與在太陽電池1面之入射點的距離對太陽電池1之面之掃描範圍大至某程度，對太陽電池1面之雷射光束之入射角θ實際上可為一定。 When scanning the laser beam across the entire surface of the solar cell 1, the following pattern is adopted. The above-described form is first scanned perpendicular to the direction of the surface of FIG. 8, and then scanned in the direction of the arrow, because the scanning station is shortened. It takes time to benefit. At this time, the laser beam from the laser 50 is reflected on the surface of the rotating polygon mirror, and the surface of the solar cell 1 is irradiated, and the rotation perpendicular to the direction of the surface of FIG. 8 is performed by the rotation of the polygon mirror. By taking the distance between the reflection point of the polygon mirror and the incident point on the surface of the solar cell 1 to the extent of the surface of the solar cell 1 to a certain extent, the incident angle θ of the laser beam on the surface of the solar cell can be substantially constant. .
太陽電池1之電極之間距係2000μm時，在圖8於 箭號方向掃描而得之散射光強度係從在例如θ=10°時之實測所得之結果，而形成為圖9之分佈，在每電極之間距，顯現散射光之峰值，而分別具有寬度S。要對各峰值界定寬度，預先規定為例如半寬度，由於峰值之剖面可按雷射點徑等變化，故加進該種條件而調整訂定求出峰值寬度之基準為佳。 When the distance between the electrodes of the solar cell 1 is 2000 μm, in Fig. 8 The intensity of the scattered light obtained by scanning in the direction of the arrow is formed as a result of actual measurement at, for example, θ = 10°, and is formed as a distribution of Fig. 9, and the peak of the scattered light appears at a distance between each electrode, and has a width S, respectively. . The width to be defined for each peak is defined as, for example, a half width. Since the peak profile can be changed by the laser spot diameter or the like, it is preferable to add such a condition and adjust the predetermined peak width.
從散射光強度分佈之峰值之寬度S求出電極之高度h。若θ為0°時，峰值之寬度S形成為電極之高度h，雷射光束之照射對太陽電池面傾斜角度θ時，需乘上tan θ作為補正項，h=Stan θ。從如圖9之θ=10°時之散射光強度分佈求出之高度形成如圖10，電極號碼對應於圖9之各峰值。 The height h of the electrode is obtained from the width S of the peak of the scattered light intensity distribution. When θ is 0°, the width S of the peak is formed as the height h of the electrode, and when the irradiation of the laser beam is inclined by the angle θ of the solar cell surface, tan θ is multiplied as a correction term, and h=Stan θ. The height obtained from the scattered light intensity distribution at θ = 10° as shown in Fig. 9 is formed as shown in Fig. 10, and the electrode numbers correspond to the respective peaks of Fig. 9.
橫亙太陽電池1之整面，進行雷射光束之掃描，檢測散射光強度且求出電極之高度，為對各太陽電池求出高度，需掃描太陽電池整面。如圖8，若雷射光束對電池面構成之角θ小，相較於從電池上方照射雷射光束之情形，僅因此在箭號方向之掃描所需之時間便減少。惟，角θ必須為通過電極之頂部之雷射光束入射至較相鄰之電極靠前面之程度的大小。 The entire surface of the solar cell 1 is scanned, and the laser beam is scanned to detect the intensity of the scattered light and the height of the electrode is determined. To determine the height of each solar cell, the entire surface of the solar cell needs to be scanned. As shown in Fig. 8, if the angle θ of the laser beam to the battery surface is small, the time required for scanning in the direction of the arrow is reduced as compared with the case of irradiating the laser beam from above the battery. However, the angle θ must be such a size that the laser beam passing through the top of the electrode is incident on the front side of the adjacent electrode.
從雷射50側觀看之太陽電池面上之電極形成如圖11，若將角θ設定為各電極前後不重疊而靠近之狀態，圖8之箭號方向之掃描距離縮短，掃描所需之時間縮短。在圖12，各電極係30μm左右之高度者，對於電池面平行地形成有75條長度150mm之電極時之電池面之掃描所需的最小時間考量時，每電池之最小掃描面積係電極長度×電極高度 ×條數，係150mm×0.03mm×75條=337.5mm2。 The electrode on the surface of the solar cell viewed from the side of the laser 50 is formed as shown in Fig. 11. If the angle θ is set to a state in which the electrodes are not overlapped before and after, the scanning distance in the direction of the arrow in Fig. 8 is shortened, and the time required for scanning is shortened. shorten. In Fig. 12, when the height of each electrode system is about 30 μm, the minimum time required for scanning the battery surface when 75 electrodes of 150 mm in length are formed in parallel with the battery surface, the minimum scanning area per cell is the length of the electrode × The electrode height × number of strips is 150 mm × 0.03 mm × 75 strips = 337.5 mm 2 .
為實現最短計測時間/1電池：10μm之分解能，每測定點之面積係10μm×10μm=100μm2/點，光檢測部之發光二極體之採樣點數係3375000點/1電池。若在頻率3.3375MHz，掃描之速度可為33750mm時，用以測定之掃描所需之時間係1s/l電池。如此，藉將在電池面之雷射光束之照射之角θ設定為小，可縮短電池面之掃描所需之時間、即測定所需之時間，而可提高產量。由於在從散射光之強度分佈求出高度之手法中，不使用以透鏡構成之成像光學系統，故不需考量模糊之影響。 In order to realize the shortest measurement time/1 battery: decomposition energy of 10 μm, the area per measurement point is 10 μm × 10 μm = 100 μm 2 / point, and the number of sampling points of the light-emitting diode of the light detecting portion is 3375000 dots / 1 battery. If the scanning speed can be 33750mm at a frequency of 3.3375MHz, the time required for the scanning to be measured is 1s/l battery. Thus, by setting the angle θ of the irradiation of the laser beam on the battery surface to be small, the time required for scanning the battery surface, that is, the time required for measurement, can be shortened, and the yield can be improved. Since the imaging optical system constituted by the lens is not used in the method of determining the height from the intensity distribution of the scattered light, it is not necessary to consider the influence of the blur.
如此，藉從測定掃描在太陽電池面之雷束光束之際之散射光而得的強度分佈求出電極之高度，相較於如專利文獻1般一面使太陽電池在面內移動一面拍攝來進行檢查之習知檢查手法，可特別縮短計測所需之時間，以旋轉之多角鏡進行主掃描時，可更進一步縮短計測時間。 In this way, the height of the electrode is obtained by measuring the intensity distribution obtained by measuring the scattered light when scanning the beam of the beam on the solar cell surface, and the solar cell is moved while being moved in the plane as in Patent Document 1. The conventional inspection method of inspection can shorten the time required for measurement, and the main measurement can be further shortened by rotating the polygon mirror.
1‧‧‧太陽電池 1‧‧‧Solar battery
20‧‧‧照相機 20‧‧‧ camera
30‧‧‧圖像處理裝置 30‧‧‧Image processing device
40‧‧‧照明光源 40‧‧‧Light source
L‧‧‧照明光 L‧‧‧Lights
OA‧‧‧拍攝光軸 OA‧‧‧ shooting optical axis
θ‧‧‧角度 Θ‧‧‧ angle
Claims (10)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012021787 | 2012-02-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201337207A true TW201337207A (en) | 2013-09-16 |
| TWI597472B TWI597472B (en) | 2017-09-01 |
Family
ID=48905413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102103978A TWI597472B (en) | 2012-02-03 | 2013-02-01 | Method and device for measuring the height of protrusions and even protrusions on the surface of articles |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5979387B2 (en) |
| CN (1) | CN104136881B (en) |
| TW (1) | TWI597472B (en) |
| WO (1) | WO2013115386A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9859139B2 (en) | 2015-07-14 | 2018-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | 3D IC bump height metrology APC |
| JP6273594B1 (en) * | 2017-05-12 | 2018-02-07 | 三菱重工機械システム株式会社 | Cardboard sheet defect detection apparatus, cardboard sheet defect removal apparatus, and corrugated sheet manufacturing apparatus |
| JP7083695B2 (en) * | 2018-05-11 | 2022-06-13 | 株式会社荏原製作所 | Bump height inspection device, substrate processing device, bump height inspection method, storage medium |
| JP2022030051A (en) * | 2020-08-06 | 2022-02-18 | Ｔｏｗａ株式会社 | Cutting device and manufacturing method of cutting article |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0996611A (en) * | 1995-09-29 | 1997-04-08 | Nec Corp | Apparatus for visual inspection of soldering and visual inspection method |
| JP3551188B2 (en) * | 2002-01-10 | 2004-08-04 | オムロン株式会社 | Surface condition inspection method and substrate inspection device |
| CN1318839C (en) * | 2002-11-28 | 2007-05-30 | 威光机械工程股份有限公司 | Automatic optical detecting system for blemish assembly on printed circuit board |
| JP4053951B2 (en) * | 2003-08-11 | 2008-02-27 | 大日本印刷株式会社 | Method and apparatus for measuring height of protrusion |
| JP4147169B2 (en) * | 2003-10-17 | 2008-09-10 | 日立ビアメカニクス株式会社 | Bump shape measuring apparatus and method |
| JP4061265B2 (en) * | 2003-12-19 | 2008-03-12 | 大日本印刷株式会社 | Method and apparatus for measuring height of protrusion |
| JP5581563B2 (en) * | 2007-03-08 | 2014-09-03 | 株式会社日立製作所 | Illumination apparatus, defect inspection apparatus and method using the same, height measurement apparatus and method |
| CN101354236B (en) * | 2008-08-05 | 2010-06-02 | 上海新傲科技股份有限公司 | Method for performing nondestructive detection of granule geometric dimension for multi-layer film surface of substrate |
| JP5570179B2 (en) * | 2009-10-22 | 2014-08-13 | 京セラ株式会社 | Level difference measuring method and level difference measuring apparatus |
-
2013
- 2013-02-01 CN CN201380007820.7A patent/CN104136881B/en not_active Expired - Fee Related
- 2013-02-01 TW TW102103978A patent/TWI597472B/en not_active IP Right Cessation
- 2013-02-01 WO PCT/JP2013/052406 patent/WO2013115386A1/en active Application Filing
- 2013-02-01 JP JP2013556525A patent/JP5979387B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN104136881A (en) | 2014-11-05 |
| JP5979387B2 (en) | 2016-08-24 |
| JPWO2013115386A1 (en) | 2015-05-11 |
| WO2013115386A1 (en) | 2013-08-08 |
| CN104136881B (en) | 2017-08-29 |
| TWI597472B (en) | 2017-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105301865B (en) | Automatic focusing system | |
| CN110411346B (en) | Method for quickly positioning surface micro-defects of aspheric fused quartz element | |
| JPH109838A (en) | Processing method of image and detecting method of defect of surface of substance | |
| JP4706356B2 (en) | Screw shape measuring device | |
| TWI597472B (en) | Method and device for measuring the height of protrusions and even protrusions on the surface of articles | |
| KR20120087680A (en) | The measurement method of PCB bump height by using three dimensional shape detector using optical triangulation method | |
| JP2011203245A (en) | System and method for inspecting surface of semiconductor wafer | |
| US9594028B2 (en) | Method and apparatus for determining coplanarity in integrated circuit packages | |
| JP2011007710A (en) | Inspection device, inspection method and inspection program | |
| TW201504593A (en) | The system and method for measuring the surface topography of transparent materials with phase-shifting shadow moire method | |
| WO2013051716A1 (en) | Surface inspection system for semiconductor wafer | |
| JPWO2015016016A1 (en) | Height measuring device | |
| US20100177951A1 (en) | Method and apparatus for scanning substrates | |
| TW201231914A (en) | Surface shape evaluating method and surface shape evaluating device | |
| JP2008157788A (en) | Surface inspection method and device | |
| JP6781969B1 (en) | Measuring device and measuring method | |
| JP6590429B1 (en) | Confocal microscope and imaging method thereof | |
| JP6362058B2 (en) | Test object measuring apparatus and article manufacturing method | |
| CN207816206U (en) | Based on the microscopical three-dimensional surface topography instrument of mating plate | |
| JP5280918B2 (en) | Shape measuring device | |
| JP6595951B2 (en) | Method and apparatus for estimating roughness of metal plate | |
| JP4788968B2 (en) | Focal plane tilt type confocal surface shape measuring device | |
| JPH10115514A (en) | Method and apparatus for inspection of surface smoothness | |
| JP2011117793A (en) | Method and device for measuring surface properties | |
| JP2006003168A (en) | Measurement method for surface shape and device therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |