TW201332166A - Light-emitting apparatus of printed circuit board - Google Patents

Abstract

A manufacturing method of a light-emitting apparatus includes forming a circuit layer on a substrate. The circuit layer includes a first conductive portion and a second conductive portion. There is a gap between the first conductive portion and the second conductive portion. An insulating material is disposed on the substrate, and fills the gap. The insulating material is thinned until expose the first conductive portion and the second conductive portion. A light emitting diode (LED) is disposing on the first conductive portion and the second conductive portion. The LED, the first conductive portion and the second conductive portion are electrical connected. The manufacturing method of the light-emitting apparatus can improve the optical efficiency.

Description

發光裝置之製造方法Method of manufacturing light emitting device

本發明係關於一種製造方法，特別關於一種發光裝置的製造方法。The present invention relates to a manufacturing method, and more particularly to a method of manufacturing a light emitting device.

近年來，發光二極體(LED)在運用上越來越廣泛，不僅僅可以運用在照明、或作為廣告招牌中的光源，也可以是液晶顯示器中背光模組之光源。In recent years, light-emitting diodes (LEDs) have become more and more widely used, not only in lighting, but also as a light source in advertising signs, or as a light source for backlight modules in liquid crystal displays.

上述的光源又可稱為發光裝置，一般而言，其係包含發光二極體以及一電路板。以覆晶結合的發光二極體為例，為了與電路板電性連結，電路板係包含一第一導電部及一第二導電部，發光二極體的二電極係分別設置於第一導電部及第二導電部上，並藉由電路板上的線路來進行電性的串聯、並聯或串並聯。The above-mentioned light source may also be referred to as a light-emitting device, and generally includes a light-emitting diode and a circuit board. For example, in the case of a flip-chip combined light-emitting diode, in order to electrically connect to the circuit board, the circuit board includes a first conductive portion and a second conductive portion, and the two electrode systems of the light-emitting diode are respectively disposed on the first conductive portion. The portion and the second conductive portion are electrically connected in series, in parallel or in series and in parallel by wires on the circuit board.

然而，由於電路板上的第一導電部及第二導電部之間有一間隙，間隙會露出電路板的表面顏色，容易吸收發光二極體所發出的光線。為了提高發光裝置的光線利用率，習知技術是利用網印技術來進行填滿間隙的動作。However, since there is a gap between the first conductive portion and the second conductive portion on the circuit board, the gap exposes the surface color of the circuit board, and the light emitted by the light-emitting diode is easily absorbed. In order to improve the light utilization efficiency of the light-emitting device, the conventional technique uses a screen printing technique to fill the gap.

但是習知技術使用網印時，網印製程所能達到的最小線寬係大於第一導電部及第二導電部之間的間隙，故會覆蓋到部分的第一導電部及第二導電部，易造成產品的可靠度降低。再者，網印製程的對位精度差，容易覆蓋到第一導電部及第二導電部或沒有填滿間隙，也可能進一步地造成產品可靠度下降。However, when the conventional technique uses screen printing, the minimum line width that can be achieved by the screen printing process is larger than the gap between the first conductive portion and the second conductive portion, so that the first conductive portion and the second conductive portion are covered. It is easy to reduce the reliability of the product. Furthermore, the alignment accuracy of the screen printing process is poor, and it is easy to cover the first conductive portion and the second conductive portion or not fill the gap, and further may cause a decrease in product reliability.

因此，如何提供一種發光裝置之製造方法，能提高發光裝置的出光效率，且不會降低產品的可靠度，已成為重要課題之一。Therefore, how to provide a method for manufacturing a light-emitting device can improve the light-emitting efficiency of the light-emitting device without degrading the reliability of the product, and has become one of important issues.

有鑑於上述課題，本發明之目的為提供一種發光裝置的製造方法，以提高發光裝置的光線利用率。In view of the above problems, it is an object of the present invention to provide a method of manufacturing a light-emitting device to improve the light utilization efficiency of the light-emitting device.

為達上述目的，依據本發明之一種發光裝置的製造方法包含於一基板形成一電路層，電路層包含一第一導電部及一第二導電部，第一導電部與第二導電部之間具有一間隙；設置一絕緣材料於基板並填滿間隙；減薄絕緣材料直至第一導電部與第二導電部露出；設置一發光二極體於第一導電部及第二導電部，發光二極體與第一導電部與第二導電部電性連結。In order to achieve the above object, a method for fabricating a light-emitting device according to the present invention comprises forming a circuit layer on a substrate, the circuit layer comprising a first conductive portion and a second conductive portion, between the first conductive portion and the second conductive portion Having a gap; providing an insulating material on the substrate and filling the gap; thinning the insulating material until the first conductive portion and the second conductive portion are exposed; and providing a light emitting diode to the first conductive portion and the second conductive portion, and emitting light The pole body is electrically connected to the first conductive portion and the second conductive portion.

在一實施例中，發光二極體係藉由覆晶或打線連結而與第一導電部與第二導電部電性連結。In one embodiment, the light emitting diode system is electrically connected to the first conductive portion and the second conductive portion by flip chip bonding or wire bonding.

在一實施例中，發光二極體為一裸晶或為一封裝體。In one embodiment, the light emitting diode is a bare crystal or a package.

在一實施例中，發光裝置的製造方法更包含烘烤或輻射照射絕緣材料。In an embodiment, the method of fabricating the light emitting device further comprises baking or irradiating the insulating material.

在一實施例中，減薄絕緣材料係利用刮刀、刷子、研磨機或其組合。In one embodiment, the thinned insulating material utilizes a doctor blade, a brush, a grinder, or a combination thereof.

在一實施例中，絕緣材料減薄後，其厚度小於或等於第一導電部與第二導電部厚度。In an embodiment, after the insulating material is thinned, the thickness thereof is less than or equal to the thickness of the first conductive portion and the second conductive portion.

在一實施例中，發光裝置的製造方法更包含設置絕緣材料於第一導電部與第二導電部之外周圍。In an embodiment, the method of fabricating the light emitting device further includes disposing an insulating material around the first conductive portion and the second conductive portion.

在一實施例中，絕緣材料係包含反射材料。In an embodiment, the insulating material comprises a reflective material.

在一實施例中，絕緣材料係包含導熱材料。In an embodiment, the insulating material comprises a thermally conductive material.

承上所述，本發明之發光裝置的製造方法藉由設置絕緣材料於基板，並填滿第一導電部及第二導電部間之間隙，再減薄絕緣材料直至第一導電部及第二導電部露出。如此一來，藉由設置絕緣材料，以填滿第一導電部及第二導電部間之間隙再加以磨平後，即可提高光線利用率，且不會造成產品可靠性的降低。As described above, the manufacturing method of the light-emitting device of the present invention comprises disposing an insulating material on the substrate and filling a gap between the first conductive portion and the second conductive portion, and then thinning the insulating material up to the first conductive portion and the second portion. The conductive portion is exposed. In this way, by providing an insulating material to fill the gap between the first conductive portion and the second conductive portion and then smoothing, the light utilization efficiency can be improved without causing a decrease in product reliability.

以下將參照相關圖式，說明依本發明較佳實施例之一種發光裝置的製造方法，其中相同的元件將以相同的參照符號加以說明。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method of manufacturing a light-emitting device according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings, wherein the same elements will be described with the same reference numerals.

請參照圖1所示，其為本發明較佳實施例之一種發光裝置的製造方法之流程圖，製造方法包含於一基板形成一電路層，電路層包含一第一導電部及一第二導電部，第一導電部與第二導電部之間具有一間隙(步驟S11)；設置一絕緣材料於基板並填滿間隙(步驟S12)；減薄絕緣材料直至第一導電部與第二導電部露出(步驟S13)；以及設置一發光二極體於第一導電部及第二導電部，發光二極體與第一導電部與第二導電部電性連結(步驟S14)。Referring to FIG. 1 , it is a flowchart of a method for fabricating a light emitting device according to a preferred embodiment of the present invention. The manufacturing method includes forming a circuit layer on a substrate, the circuit layer including a first conductive portion and a second conductive portion. a gap between the first conductive portion and the second conductive portion (step S11); providing an insulating material on the substrate and filling the gap (step S12); thinning the insulating material up to the first conductive portion and the second conductive portion Exposed (step S13); and a light-emitting diode is disposed on the first conductive portion and the second conductive portion, and the light-emitting diode is electrically connected to the first conductive portion and the second conductive portion (step S14).

請同時參照圖1及圖2，於步驟S11中，係於基板21形成一電路層22，其中基板之材質可以是塑膠、玻璃、陶瓷、金層或其組合，本實施例基板21之材質係以塑膠為例，例如基板21為FR-4基板。電路層22包含一第一導電部221及一第二導電部222，第一導電部221及一第二導電部222之材質例如為銅、或銀、或金、或其組合，本實施例中第一導電部221及一第二導電部222係以銅金屬為例，以分別作為發光二極體二電極的電性連結點。第一導電部221及一第二導電部222之間具有一間隙23，間隙23寬度小於100μm。Referring to FIG. 1 and FIG. 2 simultaneously, in step S11, a circuit layer 22 is formed on the substrate 21. The material of the substrate may be plastic, glass, ceramic, gold layer or a combination thereof. The material of the substrate 21 of this embodiment is Taking plastic as an example, for example, the substrate 21 is an FR-4 substrate. The circuit layer 22 includes a first conductive portion 221 and a second conductive portion 222. The material of the first conductive portion 221 and the second conductive portion 222 is, for example, copper, silver, or gold, or a combination thereof. The first conductive portion 221 and the second conductive portion 222 are made of copper metal as an electrical connection point of the two electrodes of the light-emitting diode. There is a gap 23 between the first conductive portion 221 and a second conductive portion 222, and the gap 23 has a width of less than 100 μm.

接著，請參照圖1及圖3，於步驟S12中，設置一絕緣材料SR於基板21並填滿間隙23，係將絕緣材料SR塗佈於基板21，絕緣材料SR可以是反射材料、或導熱材料、或其組合，於此係以一白漆為例，例如藉由網印、塗佈或印刷製程而設置並填滿間隙23，以提升光的利用率。塗佈完成後，可進行烘烤或輻射照射絕緣材料SR，以加速絕緣材料SR之硬化。需注意的是，絕緣材料SR也會同時覆蓋第一導電部221及第二導電部222。Next, referring to FIG. 1 and FIG. 3, in step S12, an insulating material SR is disposed on the substrate 21 and filled with the gap 23, and the insulating material SR is applied to the substrate 21. The insulating material SR may be a reflective material or thermally conductive. The material, or a combination thereof, is exemplified by a white paint, such as a screen printing, coating or printing process, which is provided and filled with gaps 23 to enhance light utilization. After the coating is completed, the insulating material SR may be baked or irradiated to accelerate the hardening of the insulating material SR. It should be noted that the insulating material SR also covers the first conductive portion 221 and the second conductive portion 222 at the same time.

請參照圖1及圖4，於步驟S13中，由絕緣材料SR的上表面減薄絕緣材料SR直至第一導電部221與第二導電部222的上表面露出。於此，間隙23內之絕緣材料SR厚度可小於或等於第一導電部221或第二導電部222的厚度。減薄絕緣材料SR係利用刮刀、刷子、研磨機或其組合，於此並不限制，本實施例以研磨機進行研磨為例來達成減薄絕緣材料SR。Referring to FIGS. 1 and 4, in step S13, the insulating material SR is thinned from the upper surface of the insulating material SR until the upper surfaces of the first conductive portion 221 and the second conductive portion 222 are exposed. Here, the thickness of the insulating material SR in the gap 23 may be less than or equal to the thickness of the first conductive portion 221 or the second conductive portion 222. The thinned insulating material SR is made of a doctor blade, a brush, a grinder, or a combination thereof, and is not limited thereto. In this embodiment, polishing is performed by a grinder to achieve a thinned insulating material SR.

請參照圖1及圖5，於步驟S14中，設置一發光二極體24於第一導電部221及第二導電部222，發光二極體24與第一導電部221與第二導電部222電性連結，發光二極體24之二電極係藉由覆晶或打線接合而與第一導電部221與第二導電部222電性連結，在此發光二極體24以覆晶連結於第一導電部221及第二導電部222為例，也就是發光二極體24的二電極分別與第一導電部221及第二導電部222電性連接。另外，發光二極體24可以為一裸晶或為一封裝體，在此以裸晶為例。Referring to FIG. 1 and FIG. 5 , in step S14 , a light-emitting diode 24 is disposed on the first conductive portion 221 and the second conductive portion 222 , and the light-emitting diode 24 and the first conductive portion 221 and the second conductive portion 222 . The second electrode of the light-emitting diode 24 is electrically connected to the first conductive portion 221 and the second conductive portion 222 by flip chip bonding or wire bonding, and the light-emitting diode 24 is connected to the second layer by the flip-chip. For example, the first conductive portion 221 and the second conductive portion 222 are electrically connected to the first conductive portion 221 and the second conductive portion 222. In addition, the light-emitting diode 24 may be a bare crystal or a package, and a bare crystal is taken as an example here.

特別說明的是，請參照圖6所示，於基板21形成電路層22時也一併形成一定位部S1及另一定位部S2，定位部S1及定位部S2實質上分別環設於第一導電部221及第二導電部222，而定位部S1設置於定位部S2與第一導電部221及第二導電部222之間。需注意的是，基板21的絕緣材料上係可包含絕緣材料SR1及絕緣材料SR2，絕緣材料SR1係設置於定位部S1之內，並填滿第一導電部221及第二導電部222之間的間隙；於進行研磨絕緣材料SR1步驟時，定位部S1及定位部S2可作為研磨停止輔助層，可避免位於定位部S1及第一導電部221、第二導電部222之間的絕緣材料SR1被過度研磨，以達到絕緣材料SR1厚度可小於或等於第一導電部221或第二導電部222的厚度，進而避免影響第一導電部221或第二導電部222的導電性。絕緣材料SR2則於研磨絕緣材料SR1的步驟結束，才設置於第一導電部221或第二導電部222以外的基板21的任意上表面，並甚至部分絕緣材料SR2可與絕緣材料SR1重疊，以實現定位部S1與導電部221、222間的區域被絕緣材料SR2完整覆蓋。於此，係以分別形成橢圓形的定位部S1及定位部S2為例，第一導電部221及第二導電部222均位於定位部S1內。Specifically, as shown in FIG. 6, when the circuit layer 22 is formed on the substrate 21, a positioning portion S1 and another positioning portion S2 are formed together, and the positioning portion S1 and the positioning portion S2 are substantially respectively ringed on the first portion. The conductive portion 221 and the second conductive portion 222 are disposed between the positioning portion S2 and the first conductive portion 221 and the second conductive portion 222. It is to be noted that the insulating material of the substrate 21 may include an insulating material SR1 and an insulating material SR2. The insulating material SR1 is disposed in the positioning portion S1 and fills between the first conductive portion 221 and the second conductive portion 222. In the step of polishing the insulating material SR1, the positioning portion S1 and the positioning portion S2 can serve as the polishing stop auxiliary layer, and the insulating material SR1 between the positioning portion S1 and the first conductive portion 221 and the second conductive portion 222 can be avoided. The thickness of the insulating material SR1 may be less than or equal to the thickness of the first conductive portion 221 or the second conductive portion 222, thereby avoiding affecting the conductivity of the first conductive portion 221 or the second conductive portion 222. The insulating material SR2 is disposed at any upper surface of the substrate 21 other than the first conductive portion 221 or the second conductive portion 222 at the end of the step of polishing the insulating material SR1, and even a portion of the insulating material SR2 may overlap with the insulating material SR1 to The region between the positioning portion S1 and the conductive portions 221, 222 is completely covered by the insulating material SR2. For example, the positioning portion S1 and the positioning portion S2 each having an elliptical shape are exemplified, and the first conductive portion 221 and the second conductive portion 222 are both located in the positioning portion S1.

綜上所述，本發明之發光裝置的製造方法藉由設置絕緣材料於基板，並填滿第一導電部及第二導電部間之間隙，再減薄絕緣材料直至第一導電部及第二導電部露出。如此一來，藉由設置絕緣材料，以填滿第一導電部及第二導電部間之間隙再加以磨平後，且不會造成產品可靠性的降低。In summary, the method for manufacturing a light-emitting device of the present invention comprises: providing an insulating material on the substrate, filling a gap between the first conductive portion and the second conductive portion, and then thinning the insulating material to the first conductive portion and the second portion The conductive portion is exposed. In this way, by providing an insulating material, the gap between the first conductive portion and the second conductive portion is filled and then smoothed, and the reliability of the product is not lowered.

以上所述僅為舉例性，而非為限制性者。任何未脫離本發明之精神與範疇，而對其進行之等效修改或變更，均應包含於後附之申請專利範圍中。The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims.

S11～S14．．．發光裝置的製造方法之步驟流程S11～S14. . . Step flow of manufacturing method of illuminating device

21．．．基板twenty one. . . Substrate

22．．．電路層twenty two. . . Circuit layer

221．．．第一導電部221. . . First conductive part

222．．．第二導電部222. . . Second conductive portion

23．．．間隙twenty three. . . gap

24．．．發光二極體twenty four. . . Light-emitting diode

SR、SR1、SR2．．．絕緣材料SR, SR1, SR2. . . Insulation Materials

S1、S2．．．定位部S1, S2. . . Positioning department

圖1為本發明實施例之一種發光裝置的製造方法之流程圖；1 is a flow chart of a method of fabricating a light emitting device according to an embodiment of the present invention;

圖2至圖5為本發明實施例之一種發光裝置的示意圖；以及2 to 5 are schematic views of a light emitting device according to an embodiment of the present invention;

圖6為本發明實施例之另一種發光裝置的示意圖。FIG. 6 is a schematic diagram of another light emitting device according to an embodiment of the present invention.

S11～S14．．．發光裝置的製造方法之步驟流程S11～S14. . . Step flow of manufacturing method of illuminating device

Claims (9)

一種發光裝置的製造方法，包含：於一基板形成一電路層，該電路層包含一第一導電部及一第二導電部，該第一導電部與該第二導電部之間具有一間隙；設置一絕緣材料於該基板並填滿該間隙；減薄該絕緣材料直至該第一導電部與該第二導電部露出；以及設置一發光二極體於該第一導電部及該第二導電部，該發光二極體與該第一導電部與該第二導電部電性連結。A method for manufacturing a light-emitting device, comprising: forming a circuit layer on a substrate, the circuit layer comprising a first conductive portion and a second conductive portion, wherein the first conductive portion and the second conductive portion have a gap; An insulating material is disposed on the substrate and fills the gap; the insulating material is thinned until the first conductive portion and the second conductive portion are exposed; and a light emitting diode is disposed on the first conductive portion and the second conductive portion The light emitting diode is electrically connected to the first conductive portion and the second conductive portion. 如申請專利範圍第1項所述之發光裝置的製造方法，其中該發光二極體係藉由覆晶接合或打線接合而與該第一導電部與該第二導電部電性連結。The method of manufacturing a light-emitting device according to claim 1, wherein the light-emitting diode system is electrically connected to the first conductive portion and the second conductive portion by flip chip bonding or wire bonding. 如申請專利範圍第1項所述之發光裝置的製造方法，其中該發光二極體為一裸晶或為一封裝體。The method of manufacturing a light-emitting device according to claim 1, wherein the light-emitting diode is a bare crystal or a package. 如申請專利範圍第1項所述之發光裝置的製造方法，更包含：烘烤或輻射照射該絕緣材料。The method for manufacturing a light-emitting device according to claim 1, further comprising: baking or irradiating the insulating material. 如申請專利範圍第1項所述之發光裝置的製造方法，其中減薄該絕緣材料係利用刮刀、刷子、研磨機或其組合。The method of manufacturing a light-emitting device according to claim 1, wherein the insulating material is thinned by a doctor blade, a brush, a grinder, or a combination thereof. 如申請專利範圍第1項所述之發光裝置的製造方法，其中該絕緣材料減薄後，其厚度小於或等於該第一導電部與該第二導電部厚度。The method of manufacturing a light-emitting device according to claim 1, wherein the insulating material has a thickness less than or equal to a thickness of the first conductive portion and the second conductive portion. 如申請專利範圍第1項所述之發光裝置的製造方法，更包含：設置該絕緣材料於該第一導電部與該第二導電部之外周圍。The method of manufacturing a light-emitting device according to claim 1, further comprising: providing the insulating material around the first conductive portion and the second conductive portion. 如申請專利範圍第1項所述之發光裝置的製造方法，其中該絕緣材料係包含反射材料。The method of manufacturing a light-emitting device according to claim 1, wherein the insulating material comprises a reflective material. 如申請專利範圍第1項所述之發光裝置的製造方法，其中該絕緣材料係包含導熱材料。The method of manufacturing a light-emitting device according to claim 1, wherein the insulating material comprises a heat conductive material.