JP2009076803A - Light emitting module and light emitting device - Google Patents

Light emitting module and light emitting device Download PDF

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JP2009076803A
JP2009076803A JP2007246522A JP2007246522A JP2009076803A JP 2009076803 A JP2009076803 A JP 2009076803A JP 2007246522 A JP2007246522 A JP 2007246522A JP 2007246522 A JP2007246522 A JP 2007246522A JP 2009076803 A JP2009076803 A JP 2009076803A
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light emitting
substrate
led chip
layer
light
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Kiyoshi Otani
清 大谷
Masahiro Izumi
昌裕 泉
Yutaka Honda
豊 本田
Tomohiro Sanpei
友広 三瓶
Yumiko Hayashida
裕美子 林田
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Toshiba Lighting and Technology Corp
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Toshiba Lighting and Technology Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting module and a light emitting device such that an adhesion layer can be formed in a shorter time, mounting of a light emitting element inclined to a substrate surface can be suppressed, and extraction efficiency of light from the light emitting element is less affected to secure mounting strength of the light emitting element. <P>SOLUTION: The present invention relates to the light emitting module which has a substrate 2, the adhesion layer 6 applied uniformly over a surface of the substrate 2, and a plurality of light emitting elements 5 each having a light emitting layer 5b on one surface of an element substrate 5a and mounted on the surface of the substrate 2 via the adhesion layer 6, the height of the adhesion layer 6 after light emitting element 5 is mounted being less than that of the light emitting layer 5b of the light emitting element. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、ＬＥＤ等の発光素子を用いた発光モジュール及び発光装置に関する。   The present invention relates to a light emitting module and a light emitting device using light emitting elements such as LEDs.

従来、この種、発光モジュールにおいては、基板にＬＥＤチップをマウントする場合、基板にそのマウントするＬＥＤチップ毎に接着剤を塗布したり、あるいは基板に導電体層を介してＬＥＤチップ毎に接着剤を塗布して、ＬＥＤチップを基板に接着していた（例えば、特許文献１参照）。
特許第３３２９５７３号公報 Conventionally, in this type of light emitting module, when mounting an LED chip on a substrate, an adhesive is applied to the LED chip to be mounted on the substrate, or an adhesive is applied to the substrate for each LED chip via a conductor layer. The LED chip was adhered to the substrate (see, for example, Patent Document 1).
Japanese Patent No. 3329573

しかしながら、基板へＬＥＤチップ毎に接着剤を塗布し、ＬＥＤチップをマウントするのは、特にＬＥＤチップの実装数が多くなり実装密度が高くなると、その工程に時間がかかり、また、マウントの寸法精度のずれからＬＥＤチップが傾いてマウントされてしまう等の不具合が発生した。これを図７及び図８に模式的に示すいわゆるダイボンド工程を参照して説明する。図７において、基板１０上にペースト状の接着剤１１を塗布し、ＬＥＤチップ５をその接着剤１１めがけてマウントする。ところが、図示するようにマウントの寸法精度にずれが生じる場合がある。このままマウントすると図８に示すように、接着剤１１の粘度にもよるが、ＬＥＤチップ５が基板１０上に傾いてマウントされてしまう現象が生じる。このようにＬＥＤチップ５が基板１０上に傾いてマウントされてしまうと、後工程のいわゆるワイヤーボンディング工程に支障を来たしたり、ＬＥＤは光の指向性が強いゆえ、所望の配光が得にくくなったりする。また、ワイヤーボンディング後の樹脂充填工程において、その蛍光体を含む樹脂表面が不均一に形成され、色むらが生じたりする問題が発生した。   However, applying an adhesive for each LED chip to the substrate and mounting the LED chip takes time, especially when the number of LED chips mounted increases and the mounting density increases, and the dimensional accuracy of the mount Inconveniences such as the LED chip being tilted and mounted due to the deviation. This will be described with reference to a so-called die bonding process schematically shown in FIGS. In FIG. 7, a paste-like adhesive 11 is applied on the substrate 10, and the LED chip 5 is mounted over the adhesive 11. However, as shown in the figure, there may be a deviation in the dimensional accuracy of the mount. If mounted as it is, as shown in FIG. 8, the LED chip 5 is tilted and mounted on the substrate 10 depending on the viscosity of the adhesive 11. If the LED chip 5 is tilted and mounted on the substrate 10 in this way, it interferes with a so-called wire bonding process, which is a later process, or the LED has a strong directivity of light, and it is difficult to obtain a desired light distribution. Or In addition, in the resin filling step after wire bonding, the resin surface containing the phosphor is formed unevenly, resulting in color unevenness.

本発明は、上記問題点を解消すべくなされたもので、接着層の形成の時間短縮が可能であり、発光素子が基板面に傾いてマウントされることを抑制でき、かつ発光素子からの光の取出し効率に影響を与えることが少なく、発光素子のマウント強度を確保できる発光モジュール及び発光装置を提供することを目的とする。   The present invention has been made to solve the above-described problems, can reduce the time for forming the adhesive layer, can suppress the light-emitting element from being mounted on the substrate surface, and can emit light from the light-emitting element. It is an object of the present invention to provide a light emitting module and a light emitting device that do not affect the extraction efficiency of the light emitting device and can secure the mounting strength of the light emitting element.

請求項１に記載の発光モジュールは、基板と；複数の発光素子が配設される基板面側に一様に塗布された接着層と；素子基板及びこの素子基板に設けられた発光層を有してなり、前記素子基板側を接着層に当接させてマウントし、マウント後の接着層の表面位置の高さが前記発光層には至らないように配設され発光素子と；を具備することを特徴とする。基板面に一様に塗布された接着層は、基板面に直接塗布されてもよいし、基板面に形成された反射層等を介して間接的に塗布されてもよい。接着層の表面位置の高さとは、発光素子の側面と接している部分をいう。複数の発光素子をマウントする場合、すべての発光素子が前記接着層の表面位置の高さとの関係条件を満たさなくてもよい。例えば、全発光素子の７０％以上が条件を満たせば従前に比較し効果を奏すると考えられる。   The light emitting module according to claim 1 includes: a substrate; an adhesive layer uniformly applied on a substrate surface side on which the plurality of light emitting elements are disposed; an element substrate and a light emitting layer provided on the element substrate. And mounting the light-emitting element so that the height of the surface position of the adhesive layer after mounting does not reach the light-emitting layer. It is characterized by that. The adhesive layer uniformly applied to the substrate surface may be applied directly to the substrate surface, or may be indirectly applied via a reflective layer or the like formed on the substrate surface. The height of the surface position of the adhesive layer refers to a portion in contact with the side surface of the light emitting element. When a plurality of light emitting elements are mounted, all the light emitting elements do not have to satisfy the relational condition with the height of the surface position of the adhesive layer. For example, if 70% or more of all the light emitting elements satisfy the condition, it is considered that the effect is obtained as compared with the conventional case.

請求項２に記載の発光モジュールは、請求項１に記載の発光モジュールにおいて、接着層の表面位置の高さは、発光素子の高さの半分であることを特徴とする。発光素子のマウント強度の向上を図ることができる。半分とは、誤差も含め±５％以内程度であれば効果を奏すると考えられる。   The light emitting module according to claim 2 is the light emitting module according to claim 1, wherein the height of the surface position of the adhesive layer is half of the height of the light emitting element. The mounting strength of the light emitting element can be improved. Half is considered to be effective if it is within about ± 5% including errors.

請求項３に記載の発光装置は、装置本体と；この装置本体に配設された請求項１又は請求項２に記載の発光モジュールと；を具備したことを特徴とする。本発明の発光装置は、ディスプレイ装置やいわゆる空間を照らす照明器具を含む概念である。   A light-emitting device according to a third aspect includes an apparatus main body; and the light-emitting module according to the first or second aspect disposed in the apparatus main body. The light emitting device of the present invention is a concept including a display device and a lighting fixture that illuminates a so-called space.

請求項１乃至請求項３の発明によれば、接着層の形成の時間短縮が可能であり、発光素子が基板面に傾いてマウントされることを抑制でき、かつ発光素子からの光の取出し効率に影響を与えることが少なく、発光素子のマウント強度を確保できる発光モジュール及び発光装置を提供することができる。   According to the first to third aspects of the invention, the time for forming the adhesive layer can be shortened, the light emitting element can be prevented from being tilted and mounted on the substrate surface, and the light extraction efficiency from the light emitting element can be reduced. Thus, it is possible to provide a light emitting module and a light emitting device that can ensure the mount strength of the light emitting element.

以下、本発明の発光モジュールの実施形態について図１乃至図６を参照して詳細に説明する。図1は、発光モジュールを示す一部断面図、図２は、同拡大して示す一部断面図、図３乃至図６は、発光モジュールの製造工程を示す一部断面図である。図１において、発光モジュール１は、基板２と、基板２に被着された反射層３と、給電パターン４と、複数の発光素子としてのＬＥＤチップ５と、ＬＥＤチップ５を基板２に接着する接着層６と、リフレクタ７及び封止部材８とから構成されている。   Hereinafter, embodiments of the light emitting module of the present invention will be described in detail with reference to FIGS. 1 to 6. FIG. 1 is a partial cross-sectional view showing a light emitting module, FIG. 2 is an enlarged partial cross-sectional view, and FIGS. 3 to 6 are partial cross-sectional views showing manufacturing steps of the light emitting module. In FIG. 1, a light emitting module 1 has a substrate 2, a reflective layer 3 attached to the substrate 2, a power feeding pattern 4, an LED chip 5 as a plurality of light emitting elements, and an LED chip 5 bonded to the substrate 2. The adhesive layer 6 includes a reflector 7 and a sealing member 8.

基板２は、金属又は絶縁材の平板からなる。基板２を金属製とする場合は、アルミニウム等の熱伝導性が良好で放熱性に優れた材料を適用するのが好ましい。また、絶縁材とする場合には、放熱特性が比較的良好で、光による劣化がほとんどないセラミック材料を適用できる。さらに、合成樹脂材料を用いる場合には、例えば、ガラスエポキシ樹脂等で形成できる。反射層３は、基板２に被着されており白色の絶縁材で形成されている。
また、給電パターン４は、ＬＥＤチップ５に電源からの電力を供給するために、導電性の材料で形成されている。 The board | substrate 2 consists of a flat plate of a metal or an insulating material. When the substrate 2 is made of metal, it is preferable to use a material having good thermal conductivity such as aluminum and excellent heat dissipation. In the case of an insulating material, a ceramic material having relatively good heat dissipation characteristics and almost no deterioration due to light can be applied. Further, when a synthetic resin material is used, it can be formed of, for example, a glass epoxy resin. The reflective layer 3 is attached to the substrate 2 and is formed of a white insulating material.
The power supply pattern 4 is formed of a conductive material in order to supply power from the power source to the LED chip 5.

ＬＥＤチップ５は、素子基板５ａの一面に発光層５ｂを積層して形成されている。ＬＥＤチップ５は、例えば、ＩｎＧａＮ系の素子であり、透光性のサファイア素子基板５ａに発光層５ｂが積層されている。発光層５ｂは、ｎ型窒化物半導体層と、ＩｎＧａＮ発光層と、ｐ型窒化物半導体層とが順次積層されて形成されている。そして、発光層５ｂに電流を流すための電極は、ｐ型窒化物半導体層上に透明電極とｐ型電極パッドで形成されたプラス側電極５ｃと、ｎ型窒化物半導体層上にｎ型電極パッドで形成されたマイナス側電極５ｄと構成されている。なお、この発光層５ｂは、表面及び側面（厚み方向）の双方に光を放射できる。   The LED chip 5 is formed by laminating a light emitting layer 5b on one surface of the element substrate 5a. The LED chip 5 is, for example, an InGaN-based element, and a light emitting layer 5b is laminated on a translucent sapphire element substrate 5a. The light emitting layer 5b is formed by sequentially stacking an n-type nitride semiconductor layer, an InGaN light emitting layer, and a p-type nitride semiconductor layer. Electrodes for passing current through the light emitting layer 5b are a positive electrode 5c formed of a transparent electrode and a p-type electrode pad on the p-type nitride semiconductor layer, and an n-type electrode on the n-type nitride semiconductor layer. The negative electrode 5d is formed of a pad. In addition, this light emitting layer 5b can radiate | emit light to both the surface and a side surface (thickness direction).

接着層６は、ＬＥＤチップ５を反射層３を介して基板２面に接着する機能を有する。接着層６は、反射層３の表面に一様に塗布されて、ＬＥＤチップ５を接着するものである。この接着層６には、透光性、かつ熱硬化性を有するシリコーン樹脂系の接着剤を用いることができる。リフレクタ７は、基板２上のＬＥＤチップ５を包囲するものであり、枠状に形成されており、その枠内にＬＥＤチップ５が配置されているとともに、前記給電パターン４が枠内から外部に導出されている。また、リフレクタ７は合成樹脂製であり、内面は反射面をなし、反射層３に接着により固定されている。   The adhesive layer 6 has a function of adhering the LED chip 5 to the surface of the substrate 2 through the reflective layer 3. The adhesive layer 6 is uniformly applied to the surface of the reflective layer 3 and adheres the LED chip 5. For the adhesive layer 6, a translucent and thermosetting silicone resin adhesive can be used. The reflector 7 surrounds the LED chip 5 on the substrate 2 and is formed in a frame shape. The LED chip 5 is arranged in the frame, and the power supply pattern 4 extends from the frame to the outside. Has been derived. Further, the reflector 7 is made of a synthetic resin, the inner surface forms a reflective surface, and is fixed to the reflective layer 3 by adhesion.

封止部材８は、ＬＥＤチップ５等の保護のため、外気から遮断して封止するもので、熱硬化性のエポキシ系やシリコーン系の透明又は半透明の透光性樹脂が用いられる。そして、必要に応じこれらの樹脂に蛍光体を混練したものが使用される。さらに、前記各ＬＥＤチップ５は、給電パターン４からマイナス側電極５ｄ、プラス側電極５ｃからマイナス側電極５ｄへとボンディングワイヤ９により電気的に接続されている。なお、リフレクタ７の前面には、発光モジュール１から放射される光を混色させて色むらを抑制する光拡散板２０が設けられている。   The sealing member 8 is sealed from the outside air to protect the LED chip 5 and the like, and a thermosetting epoxy-based or silicone-based transparent or translucent transparent resin is used. And what knead | mixed fluorescent substance in these resin as needed is used. Further, each LED chip 5 is electrically connected by a bonding wire 9 from the power feeding pattern 4 to the negative electrode 5d and from the positive electrode 5c to the negative electrode 5d. A light diffusing plate 20 that mixes the light emitted from the light emitting module 1 and suppresses color unevenness is provided on the front surface of the reflector 7.

次に、図２の拡大図において説明する。ＬＥＤチップ５は、素子基板５ａに発光層５ｂを積層して形成されている。ここでの素子基板５ａの厚みＡは、約８０μｍ〜１００μｍ程度であり、発光層５ｂの厚みＢは、約４μｍ〜６μｍ程度である。さらに、接着層６は、反射層３の表面に２０μｍ程度一様に塗布されるものであり、ＬＥＤチップ５のマウント後の反射層３と素子基板５ａとの間に介在する厚みＣは、約１０μｍ程度である。そして、ＬＥＤチップ５のマウントにより、接着剤が押出されてＬＥＤチップ５の側面に及ぶ接着層部分６ａの高さＨ、すなわち、反射層３の表面から接着層部分６ａの上部までの高さは、ＬＥＤチップ５の高さ寸法（素子基板５ａの厚みＡ＋発光層５ｂの厚みＢ）の半分程度になる約５０μｍ〜６０μｍであり、接着層部分６ａの上部は発光層５ｂには至らない。このように、接着層６に用いる接着剤の量、粘度等を管理することにより、接着層６がＬＥＤチップ５の発光層５ｂに至ることなく、また、ＬＥＤチップ５の基板２への接着強度を向上することが可能となる。なお、前記接着層部分６ａの高さが好ましいが、仮に、接着層部分６ａの表面位置の上部までの高さがＬＥＤチップ５の高さ寸法の半分程度までに及ばなくても、ＬＥＤチップ５のマウントにより、接着剤が押出されてＬＥＤチップ５の側面に及ぶことから、ＬＥＤチップ５の基板２への接着強度を確保することが可能である。上記具体的厚みや寸法は、本実施形態における一例に過ぎない。   Next, an enlarged view of FIG. 2 will be described. The LED chip 5 is formed by laminating a light emitting layer 5b on an element substrate 5a. The thickness A of the element substrate 5a here is about 80 μm to 100 μm, and the thickness B of the light emitting layer 5b is about 4 μm to 6 μm. Further, the adhesive layer 6 is uniformly applied to the surface of the reflective layer 3 by about 20 μm, and the thickness C interposed between the reflective layer 3 after mounting the LED chip 5 and the element substrate 5a is about It is about 10 μm. The height H of the adhesive layer portion 6a extending from the LED chip 5 to the side surface of the LED chip 5, that is, the height from the surface of the reflective layer 3 to the upper portion of the adhesive layer portion 6a is as follows. The height of the LED chip 5 is about 50 μm to 60 μm which is about half of the height dimension (thickness A of the element substrate 5a + thickness B of the light emitting layer 5b), and the upper part of the adhesive layer portion 6a does not reach the light emitting layer 5b. Thus, by controlling the amount, viscosity, and the like of the adhesive used for the adhesive layer 6, the adhesive layer 6 does not reach the light emitting layer 5b of the LED chip 5, and the adhesive strength of the LED chip 5 to the substrate 2 is increased. Can be improved. Although the height of the adhesive layer portion 6a is preferable, even if the height to the upper part of the surface position of the adhesive layer portion 6a does not reach about half the height of the LED chip 5, the LED chip 5 With this mount, the adhesive is extruded and reaches the side surface of the LED chip 5, so that it is possible to ensure the adhesive strength of the LED chip 5 to the substrate 2. The specific thicknesses and dimensions are merely examples in the present embodiment.

続いて、ＬＥＤチップ５は、プラス側電極５ｃ、マイナス側電極５ｄがボンディングワイヤ９により電気的に接続されている。ボンディングワイヤ９は、金線からなっており、実装強度の向上とＬＥＤチップ５の損傷低減のためＡｕを主成分とするバンプを介して接続されている。   Subsequently, in the LED chip 5, the plus side electrode 5 c and the minus side electrode 5 d are electrically connected by the bonding wire 9. The bonding wire 9 is made of a gold wire, and is connected via bumps mainly composed of Au in order to improve mounting strength and reduce damage to the LED chip 5.

図３乃至図６において、発光モジュール１の製造工程の概要を説明する。なお、上述と同一又は相当部分には同一符号を付し、その重複した説明は省略する。図３において、まず、基板２上の反射層３の表面に一様に、かつ一括的に、所定の粘度、量が管理された接着剤を塗布し、接着層６を形成する。次に、図４に示すように、ＬＥＤチップ５を所定間隔ごとに配置し、接着する。そして加熱することにより熱硬化性の接着剤が硬化し、マウントが完了する。いわゆるダイボンド工程が完了する。前述のように、接着層６は、ＬＥＤチップ５の側面の高さの半分程度まで及び、接着強度が向上する。続いて、図５に示すように、ボンディングワイヤ９を各ＬＥＤチップ５の電極５ｃ、５ｄにバンプを介して接続し、ボンディング工程が完了する。さらに、図６に示すように、リフレクタ７を反射層３に接着により固定し、このリフレクタ７内に液状の封止部材８をリフレクタ７の上面レベルまで流し込んで、硬化し、安定するまで所要時間放置する。以上により製造工程が終了する。   3 to 6, the outline of the manufacturing process of the light emitting module 1 will be described. In addition, the same code | symbol is attached | subjected to the same or equivalent part as the above-mentioned, and the duplicate description is abbreviate | omitted. In FIG. 3, first, an adhesive having a predetermined viscosity and amount is applied uniformly and collectively on the surface of the reflective layer 3 on the substrate 2 to form the adhesive layer 6. Next, as shown in FIG. 4, the LED chips 5 are arranged at predetermined intervals and bonded. Then, by heating, the thermosetting adhesive is cured, and the mounting is completed. A so-called die bonding process is completed. As described above, the adhesive layer 6 extends to about half the height of the side surface of the LED chip 5 and the adhesive strength is improved. Subsequently, as shown in FIG. 5, the bonding wires 9 are connected to the electrodes 5c and 5d of the LED chips 5 via bumps, and the bonding process is completed. Furthermore, as shown in FIG. 6, the reflector 7 is fixed to the reflective layer 3 by adhesion, and the liquid sealing member 8 is poured into the reflector 7 to the upper surface level of the reflector 7 to be cured and required time to stabilize. put. This completes the manufacturing process.

本実施形態の発光モジュールの構成による光の放射について図１及び図２を参照して説明する。ＬＥＤチップ５の発光層５ｂの表面及び側面（厚み方向）から光が放射されるが、まず、前表面（光拡散板２０側）から前方に向け放射された光は、主として封止部材８を通過し、光拡散板２０で拡散されて放射される。一方、後表面から基板２方向に向け放射された光は、素子基板５ａを通過し、反射層３で反射され、前方に向け放射される。また、側面から放射された光は、封止部材８を通過し、リフレクタ７で反射されたり、封止部材８を通過し、接着層６を通過し、反射層３で反射されたりして、前方に向け放射される。つまり、光の放射方向は複合的であるが、発光層５ｂの周囲から放射される光は、効率よく前方に放射されるよう構成されている。   The light emission by the structure of the light emitting module of this embodiment is demonstrated with reference to FIG.1 and FIG.2. Light is emitted from the surface and side surfaces (thickness direction) of the light emitting layer 5b of the LED chip 5, but first, the light emitted forward from the front surface (light diffusion plate 20 side) mainly passes through the sealing member 8. It passes through, is diffused by the light diffusion plate 20, and is emitted. On the other hand, the light radiated from the rear surface toward the substrate 2 passes through the element substrate 5a, is reflected by the reflective layer 3, and radiates forward. Further, the light emitted from the side surface passes through the sealing member 8 and is reflected by the reflector 7, or passes through the sealing member 8, passes through the adhesive layer 6, and is reflected by the reflective layer 3, Radiated forward. That is, the light emission directions are complex, but the light emitted from the periphery of the light emitting layer 5b is configured to be efficiently emitted forward.

以上のように本実施形態によれば、接着層の形成の時間短縮が可能であり、つまり、基板面に一様に接着剤を塗布するので、接着剤の塗布工程の時間の短縮が可能となる。また、ＬＥＤチップが基板面に傾いてマウントされることを抑制でき、所望の配光が得にくくなったり、色むらが生じたりする問題を改善できる。さらに、接着層がＬＥＤチップの発光層に至ることがないので、接着層により発光層からの光が吸収されてしまう度合いを減少でき、光の取出し効率に与える影響を少なくすることができる。加えて、基板面に一様に接着剤を塗布することにより、ＬＥＤチップの接着強度を確保でき、さらに、接着層の高さをＬＥＤチップの半分程度としたことにより、一層接着強度の向上を図ることができる。   As described above, according to the present embodiment, it is possible to shorten the time for forming the adhesive layer. That is, since the adhesive is uniformly applied to the substrate surface, the time for the adhesive application process can be shortened. Become. Further, it is possible to suppress the LED chip from being tilted and mounted on the substrate surface, and it is possible to improve the problem that it becomes difficult to obtain a desired light distribution or color unevenness occurs. Furthermore, since the adhesive layer does not reach the light emitting layer of the LED chip, the degree of light absorbed from the light emitting layer by the adhesive layer can be reduced, and the influence on the light extraction efficiency can be reduced. In addition, the adhesive strength of the LED chip can be ensured by uniformly applying the adhesive to the substrate surface, and the adhesive strength can be further improved by making the height of the adhesive layer about half that of the LED chip. Can be planned.

次に、本発明の発光装置の実施形態について説明する。図示は省略するが、上記実施形態の発光モジュールは、装置本体に組込み、発光装置として構成できる。例えば、各種ディスプレイ装置、また、屋内又は屋外で使用される照明器具に適用可能である。よって、このような発光装置によれば、上記実施形態の発光モジュールの効果を奏する発光装置を提供できる。   Next, an embodiment of the light emitting device of the present invention will be described. Although illustration is omitted, the light emitting module of the above embodiment can be incorporated into the apparatus main body and configured as a light emitting apparatus. For example, the present invention can be applied to various display devices and lighting equipment used indoors or outdoors. Therefore, according to such a light emitting device, it is possible to provide a light emitting device that exhibits the effects of the light emitting module of the above embodiment.

なお、以上の実施形態において、発光モジュールは、白色発光として構成しても、青色、緑色、赤色の発光色として構成してもよい。   In the above embodiment, the light emitting module may be configured to emit white light or may be configured to emit blue, green, and red light.

本発明の発光モジュールの実施形態を示す一部断面図である。It is a partial sectional view showing an embodiment of a light emitting module of the present invention. 同発光モジュールの実施形態を拡大して示す一部断面図である。It is a partial cross section figure which expands and shows embodiment of the light emitting module. 同発光モジュールの製造工程を示す一部断面図である。It is a partial cross section figure which shows the manufacturing process of the light emitting module. 同じく発光モジュールの製造工程を示す一部断面図である。It is a partial cross section figure which similarly shows the manufacturing process of a light emitting module. 同じく発光モジュールの製造工程を示す一部断面図である。It is a partial cross section figure which similarly shows the manufacturing process of a light emitting module. 同じく発光モジュールの製造工程を示す一部断面図である。It is a partial cross section figure which similarly shows the manufacturing process of a light emitting module. 従来例を示す説明図である。It is explanatory drawing which shows a prior art example. 同従来例を示す説明図である。It is explanatory drawing which shows the same prior art example.

符号の説明Explanation of symbols

１ 発光モジュール
２ 基板
５ 発光素子（ＬＥＤチップ）
５ａ 素子基板
５ｂ 発光層
６ 接着層 DESCRIPTION OF SYMBOLS 1 Light emitting module 2 Board | substrate 5 Light emitting element (LED chip)
5a Element substrate 5b Light emitting layer 6 Adhesive layer

Claims (3)

基板と；
複数の発光素子が配設される基板面側に一様に塗布された接着層と；
素子基板及びこの素子基板に設けられた発光層を有してなり、前記素子基板側を接着層に当接させてマウントし、マウント後の接着層の表面位置の高さが前記発光層には至らないように配設され発光素子と；
を具備することを特徴とする発光モジュール。 A substrate;
An adhesive layer uniformly applied to a substrate surface side on which a plurality of light emitting elements are disposed;
It has an element substrate and a light emitting layer provided on the element substrate, the element substrate side is mounted in contact with the adhesive layer, and the height of the surface position of the adhesive layer after mounting is in the light emitting layer. A light-emitting element arranged so as not to reach;
A light emitting module comprising: 前記接着層の表面位置の高さは、発光素子の高さの半分であることを特徴とする請求項１に記載の発光モジュール。   The light emitting module according to claim 1, wherein the height of the surface position of the adhesive layer is half of the height of the light emitting element. 装置本体と；
この装置本体に配設された請求項１又は請求項２に記載の発光モジュールと；
を具備したことを特徴とする発光装置。 The device body;
The light emitting module according to claim 1 or 2 disposed in the apparatus main body;
A light emitting device comprising:
JP2007246522A 2007-09-25 2007-09-25 Light emitting module and light emitting device Pending JP2009076803A (en)

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Country Link
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015023230A (en) * 2013-07-23 2015-02-02 日亜化学工業株式会社 Light-emitting device and lighting device
CN110383510A (en) * 2017-03-08 2019-10-25 科锐公司 Substrate and correlation technique for light emitting diode
DE112016002425B4 (en) 2015-05-29 2022-03-03 Citizen Electronics Co., Ltd. Manufacturing method for a light emitting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015023230A (en) * 2013-07-23 2015-02-02 日亜化学工業株式会社 Light-emitting device and lighting device
DE112016002425B4 (en) 2015-05-29 2022-03-03 Citizen Electronics Co., Ltd. Manufacturing method for a light emitting device
CN110383510A (en) * 2017-03-08 2019-10-25 科锐公司 Substrate and correlation technique for light emitting diode
CN110383510B (en) * 2017-03-08 2024-02-06 科锐Led公司 Substrate for light emitting diode and related method

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