TW201327080A - Gas flow monitoring system - Google Patents

Gas flow monitoring system Download PDF

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TW201327080A
TW201327080A TW101133244A TW101133244A TW201327080A TW 201327080 A TW201327080 A TW 201327080A TW 101133244 A TW101133244 A TW 101133244A TW 101133244 A TW101133244 A TW 101133244A TW 201327080 A TW201327080 A TW 201327080A
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Taiwan
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flow rate
flow
gas
monitoring unit
rate monitoring
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TW101133244A
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Chinese (zh)
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TWI460570B (en
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Akiko Nakada
Yoji Mori
Naoya Shiroyama
Minoru Ito
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Ckd Corp
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D3/00—Arrangements for supervising or controlling working operations
    • F17D3/01—Arrangements for supervising or controlling working operations for controlling, signalling, or supervising the conveyance of a product
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D5/00—Protection or supervision of installations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/7722—Line condition change responsive valves
    • Y10T137/7758—Pilot or servo controlled
    • Y10T137/7759—Responsive to change in rate of fluid flow
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/7722—Line condition change responsive valves
    • Y10T137/7758—Pilot or servo controlled
    • Y10T137/7761—Electrically actuated valve
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87917—Flow path with serial valves and/or closures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Automation & Control Theory (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Flow Control (AREA)
  • Measuring Volume Flow (AREA)
  • Drying Of Semiconductors (AREA)
  • Pipeline Systems (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A gas flow monitoring system is provided in process gas lines each arranged to supply gas to a predetermined process chamber via a flow control device, the system being configured to measure lowering or rising of gas pressure before and after the flow control device to monitor a flow rate of the flow control device. The system includes a first flow monitoring unit placed upstream of the flow control device in a selected one of the process gas lines, a second flow monitoring unit placed in a discharge passage upstream of the process chamber, and a controller that constantly monitors the flow rate of the flow control device with the first flow monitoring unit and, when the first flow monitoring unit detects the flow-rate abnormality two or more times, commands the second flow monitoring unit to re-verify whether flow-rate abnormality is present or not in the flow control device.

Description

氣體流量監視系統 Gas flow monitoring system

本發明係有關於一種氣體流量監視系統，該氣體流量監視系統係監視在半導體製造裝置之處理氣體(process gas)等的氣體供給系統所使用之流量控制機器((mass flow controller)等)的流量精度。 The present invention relates to a gas flow rate monitoring system that monitors a flow rate of a flow control device (mass flow controller, etc.) used in a gas supply system such as a process gas in a semiconductor manufacturing apparatus. Precision.

在半導體製程中的成膜裝置或乾式蝕刻裝置等，使用例如矽烷(silane)等之特殊氣體、或氯氣等之腐蝕性氣體、及氫氣或磷化氫(phosphine)等之可燃性氣體等。因為這些氣體的流量直接影響製品的好壞，所以必須嚴格地管理其流量。尤其，近年來伴隨半導體基板的積層化、微細化，在處理氣體供給系統之提高可靠性的要求比以往更高漲。 For the film forming apparatus or the dry etching apparatus in the semiconductor process, a special gas such as silane or a corrosive gas such as chlorine or a flammable gas such as hydrogen or phosphine is used. Because the flow of these gases directly affects the quality of the product, its flow must be strictly managed. In particular, in recent years, with the merging and miniaturization of semiconductor substrates, the demand for improved reliability of the processing gas supply system has been higher than ever.

因此，例如，在專利文獻1揭示在半導體製程之供給氣體的流量控制技術。 Therefore, for example, Patent Document 1 discloses a flow rate control technique of a supply gas in a semiconductor process.

專利文獻1的技術係為了正確地算出向處理室所排出之氣體流量，而在質量流量控制器的下游側具備壓力計與最終遮斷閥，在關閉最終遮斷閥後，以既定時間間隔對壓力計的壓力上昇取樣(sampling)後，在取樣資料中相關係數高之範圍求得壓力傾斜角，並算出質量流量控制器之流量的技術。此外，在專利文獻1，亦記載在質量流量控制器的上游側具備遮 斷閥與壓力計，在關閉遮斷閥後，以既定時間間隔對壓力計的壓力下降取樣後，在取樣資料中相關係數高之範圍求得壓力傾斜角的技術。 The technique of Patent Document 1 is to provide a pressure gauge and a final shutoff valve on the downstream side of the mass flow controller in order to accurately calculate the flow rate of the gas discharged into the processing chamber, and to close the final shutoff valve at a predetermined time interval. After the pressure of the pressure gauge is sampled, the pressure inclination angle is obtained in the range where the correlation coefficient is high in the sampled data, and the technique of calculating the flow rate of the mass flow controller is calculated. Further, Patent Document 1 also discloses that the upstream side of the mass flow controller is provided with a cover. The valve and the pressure gauge are techniques for determining the pressure inclination angle in the range of the correlation coefficient in the sampled data after the pressure drop of the pressure gauge is sampled at a predetermined time interval after the shutoff valve is closed.

[先行技術文獻] [Advanced technical literature]

[專利文獻1]特開平9-184600號公報 [Patent Document 1] JP-A-9-184600

可是，在專利文獻1所記載之技術，具有如以下所示的問題。 However, the technique described in Patent Document 1 has the following problems.

在專利文獻1之技術，因為在關閉質量流量控制器之上游側或下游側的遮斷閥後測量壓力計的壓力下降或壓力上昇，所以在檢查流量時一定往處理室所排出之氣體流量被停止。 In the technique of Patent Document 1, since the pressure drop or the pressure rise of the pressure gauge is measured after the shutoff valve on the upstream side or the downstream side of the mass flow controller is closed, the flow rate of the gas discharged to the processing chamber must be checked when the flow rate is checked. stop.

可是，在專利文獻1之技術，因為每當檢查流量時往處理室所排出之氣體流量被停止，所以具有在半導體製造裝置之氣體供給系統的運轉率降低的問題。 However, in the technique of Patent Document 1, since the flow rate of the gas discharged to the processing chamber is stopped every time the flow rate is inspected, there is a problem that the operating rate of the gas supply system in the semiconductor manufacturing apparatus is lowered.

又，處理氣體中尤其成膜用材料氣體係由於其特性而具有即使在氣體管路內亦析出固態物的可能性，若在質量流量控制器的細管部分固態物析出，則從質量流量控制器往處理室所排出之氣體流量逐漸變化。若往處理室所排出之氣體流量變化，因為半導體晶圓的良率降低，所以需要可一直監視氣體流量之變化的氣體流量監視系統。 Further, in the process gas, in particular, the material gas system for film formation has a possibility of depositing solid matter even in the gas pipe due to its characteristics, and if the solid matter is precipitated in the thin tube portion of the mass flow controller, the mass flow controller is The flow of gas discharged to the processing chamber gradually changes. If the flow rate of the gas discharged into the processing chamber changes, since the yield of the semiconductor wafer is lowered, a gas flow monitoring system capable of constantly monitoring the change in the gas flow rate is required.

可是，在專利文獻1之技術，因為以在流量檢查時使往處理室所排出之氣體流量停止為前提，所以具有無法在 系統運轉中一直監視氣體流量之變化的問題。 However, in the technique of Patent Document 1, since the flow rate of the gas discharged to the processing chamber is stopped at the time of flow rate inspection, it is impossible to The problem of changes in gas flow is constantly monitored during system operation.

進而，設置於質量流量控制器之上游側的壓力計需要測量從處理氣體源所供給之氣體壓力，但是因為從處理氣體源所供給之氣體壓力係一般高達約0.5MPa，所以在壓力感測器無法使用高精度者。因此，在流量檢查時發生偏差量的情況，難判斷是壓力感測器的誤差或是質量流量控制器本身的偏差量。 Further, the pressure gauge provided on the upstream side of the mass flow controller needs to measure the gas pressure supplied from the processing gas source, but since the gas pressure supplied from the processing gas source is generally as high as about 0.5 MPa, the pressure sensor is Unable to use high precision. Therefore, in the case where the amount of deviation occurs during the flow check, it is difficult to judge whether it is the error of the pressure sensor or the amount of deviation of the mass flow controller itself.

可是，在專利文獻1之技術，因為即使檢查質量流量控制器的流量，亦無法進行流量監視單元本身的診斷，所以具有無法進行可靠性更高之流量檢查的問題。 However, in the technique of Patent Document 1, since the diagnosis of the flow rate monitoring unit itself cannot be performed even if the flow rate of the mass flow controller is checked, there is a problem that the flow rate inspection with higher reliability cannot be performed.

本發明係為了解決上述之問題點而開發的，其目的在於提供一種氣體流量監視系統，該氣體流量監視系統係一面一直監視流量控制機器(質量流量控制器等)的流量精度，一面在必要的情況，進行包含再檢查或流量監視單元本身的自動診斷之可靠性更高的流量檢查。 The present invention has been made in order to solve the above problems, and an object of the invention is to provide a gas flow rate monitoring system that monitors the flow rate accuracy of a flow rate control device (mass flow controller, etc.) while monitoring In the case, perform a more reliable flow check including re-inspection or automatic diagnosis of the flow monitoring unit itself.

(1)為了解決該課題，本發明之一形態的氣體流量監視系統，係配設於使來自處理氣體供給源的氣體經由流量控制機器後供給至既定處理室的複數條處理氣體管路，並藉由測量在該流量控制機器的前後之氣體壓力的下降或上昇，而監視該流量控制機器的流量，該氣體流量監視系統包括：第1流量監視單元，係在該處理氣體管路中所選擇之任意的處理氣體管路之該流量控制機器的上游側流路所具備；第2流量監視單元，係在從該處理室之上游側流路所分支的排出流路所具備； 及控制部，係下指令成藉該第1流量監視單元一直監視該流量控制機器的流量，而且在該第1流量監視單元偵測到複數次流量異常時藉該第2流量監視單元再檢查該流量控制機器有無流量異常。 (1) In order to solve the problem, a gas flow rate monitoring system according to an aspect of the present invention is disposed in a plurality of processing gas lines that supply a gas from a processing gas supply source to a predetermined processing chamber via a flow rate control device, and Monitoring the flow rate of the flow control machine by measuring a drop or rise in gas pressure before and after the flow control machine, the gas flow monitoring system comprising: a first flow monitoring unit selected in the process gas line Any of the processing gas lines is provided in an upstream side flow path of the flow rate control device; and the second flow rate monitoring unit is provided in a discharge flow path branched from an upstream side flow path of the processing chamber; And the control unit is configured to monitor the flow rate of the flow control device by the first flow rate monitoring unit, and to check the second flow rate monitoring unit when the first flow rate monitoring unit detects a plurality of abnormal flow rates The flow control machine has no flow abnormality.

在該氣體流量監視系統，該第1流量監視單元係包括從氣體供給源側所依序配置的第1開始遮斷閥、第1測量用槽、第1壓力計及調壓器；在該一直監視時，使該第1開始遮斷閥以既定的時間間隔連續地開閉，而在該第1測量用槽內之氣體供給壓力重複上昇、下降時的壓力下限值係成為該流量控制機器的上游側壓力之該調壓器的設定壓力以上較佳。 In the gas flow rate monitoring system, the first flow rate monitoring unit includes a first start shutoff valve, a first measurement tank, a first pressure gauge, and a pressure regulator that are sequentially disposed from the gas supply source side; During the monitoring, the first start shutoff valve is continuously opened and closed at predetermined time intervals, and the lower limit of the pressure at which the gas supply pressure in the first measurement tank repeatedly rises and falls is the flow rate control device. It is preferable that the pressure of the upstream side is higher than the set pressure of the pressure regulator.

又，在該氣體流量監視系統，在該第2流量監視單元，包括從該流量控制機器側所依序配置的第2開始遮斷閥、第2測量用槽、第2壓力計及操作遮斷閥；將吸引泵設置於該排出流路；該第2流量監視單元係打開該操作遮斷閥，並以該吸引泵使該第2測量用槽內的氣體壓力變成真空狀態後，關閉該操作遮斷閥，而且打開該第2開始遮斷閥，測量該第2測量用槽內之氣體壓力的壓力上昇量，檢查流量較佳。 Further, in the gas flow rate monitoring system, the second flow rate monitoring means includes a second start shutoff valve, a second measurement tank, a second pressure gauge, and an operation interruption arranged in this order from the flow rate control apparatus side. a valve; the suction pump is disposed in the discharge flow path; the second flow rate monitoring unit opens the operation shutoff valve, and the gas pressure in the second measurement tank is changed to a vacuum state by the suction pump, and then the operation is closed The shutoff valve is opened, and the second start shutoff valve is opened, and the pressure rise amount of the gas pressure in the second measurement tank is measured, and the flow rate is preferably checked.

進而，在該氣體流量監視系統，該第1流量監視單元係在使用成膜用材料氣體的氣體管路所具備較佳。 Further, in the gas flow rate monitoring system, the first flow rate monitoring unit is preferably provided in a gas line using a material gas for film formation.

(2)若依據本發明之其他的形態，提供一種氣體流量監視系統，係配設於使來自處理氣體供給源的氣體經由流量控制機器後供給至既定處理室的複數條處理氣體管路，並藉由測量在該流量控制機器的前後之氣體壓力的下降或上昇，而監視該流量控制機器的流量，該氣體流量監視系統的特徵為包 括：第1流量監視單元，係在該處理氣體管路中所選擇之任意的處理氣體管路之該流量控制機器的上游側流路所具備；第2流量監視單元，係在從該處理室之上游側流路所分支的排出流路所具備；及控制部，係下指令成藉第1流量監視單元一直監視對象之流量控制機器的流量，而且在該第1流量監視單元檢查流量僅既定次數時藉由使該第1流量監視單元及該第2流量監視單元同時進行流量檢查，根據該第2流量監視單元之流量檢查結果修正是在該第1流量監視單元之流量檢查所算出的流量與以該流量控制機器所設定之流量的差異的檢查偏差量。 (2) According to another aspect of the present invention, a gas flow rate monitoring system is provided in a plurality of processing gas lines that supply a gas from a processing gas supply source to a predetermined processing chamber via a flow rate control device, and The flow rate of the flow control machine is monitored by measuring a drop or rise in gas pressure before and after the flow control machine, the gas flow monitoring system being characterized by a package The first flow rate monitoring unit is provided in an upstream flow path of the flow rate control device selected in any of the process gas lines in the process gas line; and the second flow rate monitoring unit is located in the process chamber The discharge flow path branched by the upstream flow path is provided; and the control unit commands the flow rate of the flow rate control device to be monitored by the first flow rate monitoring unit, and the flow rate is checked only by the first flow rate monitoring unit. When the first flow rate monitoring unit and the second flow rate monitoring unit perform the flow rate check at the same time, the flow rate check result of the second flow rate monitoring unit corrects the flow rate calculated by the flow rate check of the first flow rate monitoring unit. The amount of inspection deviation from the difference in flow rate set by the flow control machine.

在該氣體流量監視系統，該第1流量監視單元係包含複數個第1流量監視單元；認定在同時使用該複數個第1流量監視單元中的一個與該第2流量監視單元所進行的流量檢查之流量的偏差量係特定%以上時，同時使用該複數個第1流量監視單元中之其他的一個與該第2流量監視單元，再進行流量檢查較佳。 In the gas flow rate monitoring system, the first flow rate monitoring unit includes a plurality of first flow rate monitoring means; and it is determined that one of the plurality of first flow rate monitoring means and the second flow rate monitoring unit are simultaneously used for flow check When the amount of deviation of the flow rate is a specific % or more, it is preferable to use the other one of the plurality of first flow rate monitoring units and the second flow rate monitoring unit.

又，在該氣體流量監視系統，在該再度流量檢查，亦認定該複數個第1流量監視單元中該其他的一個與該第2流量監視單元所檢查之流量的偏差量係其他的特定%以上時，認定該第2流量監視單元具有故障的可能性，而在認定該再度進行流量檢查之流量的偏差量不是其他的特定%以上時，認定該複數個第1流量監視單元中的該一個故障較佳。 Further, in the gas flow rate monitoring system, the amount of deviation between the other one of the plurality of first flow rate monitoring means and the flow rate detected by the second flow rate monitoring means is determined to be other specific % or more When it is determined that the second flow rate monitoring unit has a possibility of failure, and the amount of deviation of the flow rate for confirming the flow rate check is not the other specific % or more, the one of the plurality of first flow rate monitoring units is identified as the failure. Preferably.

在該氣體流量監視系統，該第1流量監視單元係包括從氣體供給源側所依序配置的第1開始遮斷閥、第1測量用槽、第1壓力計及調壓器；在該一直監視時，使該第1開始 遮斷閥以既定的時間間隔連續地開閉，而在該第1測量用槽內之氣體供給壓力重複上昇、下降時的壓力下限值係成為該流量控制機器的上游側壓力之該調壓器的設定壓力以上更佳。 In the gas flow rate monitoring system, the first flow rate monitoring unit includes a first start shutoff valve, a first measurement tank, a first pressure gauge, and a pressure regulator that are sequentially disposed from the gas supply source side; Make the first start when monitoring The shutoff valve is continuously opened and closed at a predetermined time interval, and the pressure lower limit value at which the gas supply pressure in the first measurement tank repeatedly rises and falls is the pressure regulator of the upstream side of the flow rate control device. The setting pressure is better than the above.

又，在該氣體流量監視系統，在該第2流量監視單元，包括從該流量控制機器側所依序配置的第2開始遮斷閥、第2測量用槽、第2壓力計及操作遮斷閥；將吸引泵設置於該排出流路；該第2流量監視單元係打開該操作遮斷閥，並以該吸引泵使該第2測量用槽內的氣體壓力變成真空狀態後，關閉該操作遮斷閥，而且打開該第2開始遮斷閥，測量該第2測量用槽內之氣體壓力的壓力上昇量，檢查流量較佳。 Further, in the gas flow rate monitoring system, the second flow rate monitoring means includes a second start shutoff valve, a second measurement tank, a second pressure gauge, and an operation interruption arranged in this order from the flow rate control apparatus side. a valve; the suction pump is disposed in the discharge flow path; the second flow rate monitoring unit opens the operation shutoff valve, and the gas pressure in the second measurement tank is changed to a vacuum state by the suction pump, and then the operation is closed The shutoff valve is opened, and the second start shutoff valve is opened, and the pressure rise amount of the gas pressure in the second measurement tank is measured, and the flow rate is preferably checked.

又，在該氣體流量監視系統，該第1流量監視單元係在使用成膜用材料氣體的氣體管路所具備較佳。 Further, in the gas flow rate monitoring system, the first flow rate monitoring unit is preferably provided in a gas line using a material gas for film formation.

其次，說明本發明之氣體流量監視系統的作用及效果。 Next, the action and effect of the gas flow rate monitoring system of the present invention will be described.

(1)若依據上述(1)的構成，一面一直監視流量控制機器的流量精度，一面在一直監視中確認流量異常時，進行精度更高的再檢查，藉此，可提高系統整體的可靠性。 (1) According to the configuration of the above (1), while monitoring the flow rate accuracy of the flow control device while monitoring the flow rate abnormality during the monitoring, the re-inspection with higher accuracy is performed, thereby improving the overall reliability of the system. .

具體而言，因為在複數條處理氣體管路中所選擇之任意的處理氣體管路具有第1流量監視單元，所以可選定重要的處理氣體管路，並一直監視流量。因此，例如，藉由在流量控制機器內之細管部分使用固態物易析出之成膜用材料氣體的氣體管路具有第1流量監視單元，一直監視易發生流量異常之處理氣體管路的流量精度，而可迅速地發現該異常。結 果，可有效地實現半導體晶圓之良率的提高。 Specifically, since any of the processing gas lines selected in the plurality of processing gas lines has the first flow rate monitoring unit, an important processing gas line can be selected and the flow rate can be constantly monitored. Therefore, for example, the gas flow path of the material gas for film formation which is easily deposited by the solid matter in the narrow tube portion of the flow rate control device has the first flow rate monitoring unit, and the flow rate accuracy of the process gas line which is prone to abnormal flow rate is always monitored. , and the anomaly can be quickly found. Knot As a result, the yield of the semiconductor wafer can be effectively improved.

又，因為在從處理室之上游側流路所分支的排出流路具有第2流量監視單元，所以可高精度地測量從流量控制機器所排出之氣體壓力。這是由於以下的理由，從流量控制機器所排出之氣體壓力係比來自處理氣體供給源的高氣體壓力低，因為一般將吸引泵設置於排出流路，所以在第2流量監視單元，成為接近真空狀態的低壓，而可使用高精度之隔膜式壓力計。 Further, since the discharge flow path branched from the upstream side flow path of the processing chamber has the second flow rate monitoring means, the gas pressure discharged from the flow rate control device can be measured with high accuracy. This is because the gas pressure discharged from the flow rate control device is lower than the high gas pressure from the processing gas supply source for the following reasons. Since the suction pump is generally disposed in the discharge flow path, the second flow rate monitoring unit is brought close to each other. Low pressure in the vacuum state, and a high-precision diaphragm type pressure gauge can be used.

又，因為具有控制部，該控制部係下指令成藉第1流量監視單元一直監視流量控制機器的流量，而且在第1流量監視單元偵測到複數次流量異常時藉第2流量監視單元再檢查流量控制機器有無流量異常，所以一面一直監視流量控制機器的流量精度，一面在一直監視中確認流量異常時，進行精度更高的再檢查，而可判定是第1流量監視單元的誤差，或是流量控制機器本身的異常。 Further, the control unit is configured to instruct the flow rate control unit to monitor the flow rate of the flow rate control device by the first flow rate monitoring unit, and to use the second flow rate monitoring unit when the first flow rate monitoring unit detects a plurality of abnormal flow rates. Checking the flow control device for abnormal flow rate, so that the flow rate accuracy of the flow control device is always monitored, and when the flow rate abnormality is confirmed during the monitoring, the re-inspection with higher accuracy is performed, and the error of the first flow monitoring unit can be determined, or It is an abnormality of the flow control machine itself.

因此，藉由藉第2流量監視單元補足第1流量監視單元的流量精度，而在系統整體上，可進行可靠性更高的流量監視。又，將使氣體供給系統停止之藉第2流量監視單元之流量檢查的次數減少至必要最低限度，可亦有助於提高在半導體製造裝置之氣體供給系統的運轉率。 Therefore, by the second flow rate monitoring unit, the flow rate accuracy of the first flow rate monitoring unit is complemented, and the reliability of the flow monitoring can be performed as a whole. Further, the number of times of the flow rate inspection by the second flow rate monitoring means for stopping the gas supply system is reduced to the minimum necessary, which contributes to an increase in the operating rate of the gas supply system in the semiconductor manufacturing apparatus.

因此，若依據上述(1)的構成，可提供一種氣體流量監視系統，該氣體流量監視系統係一面一直監視流量控制機器(質量流量控制器等)的流量精度，一面在必要的情況，進行包含再檢查或流量監視單元本身的自動診斷之可靠性更高的 流量檢查。 Therefore, according to the configuration of the above (1), it is possible to provide a gas flow rate monitoring system that monitors the flow rate accuracy of the flow rate control device (mass flow controller, etc.) while monitoring, and if necessary, includes Re-check or the reliability of the automatic diagnosis of the flow monitoring unit itself is higher Traffic check.

(2)又，若依據上述(2)的構成，一面一直監視流量控制機器的流量精度，一面在檢查流量僅既定次數時，進行流量監視單元本身的自動診斷，藉此，可提高系統整體的可靠性。 (2) Further, according to the configuration of the above (2), while monitoring the flow rate accuracy of the flow rate control device, the automatic diagnosis of the flow rate monitoring unit itself is performed while checking the flow rate for only a predetermined number of times, thereby improving the overall system reliability.

具體而言，因為在複數條處理氣體管路中所選擇之任意的處理氣體管路具有第1流量監視單元，所以可選定重要的處理氣體管路，並一直監視流量。因此，例如，藉由在流量控制機器內之細管部分使用固態物易析出之成膜用材料氣體的氣體管路具有第1流量監視單元，而一直監視易發生流量異常之處理氣體管路的流量精度。結果，可有效地實現半導體晶圓之良率的提高。 Specifically, since any of the processing gas lines selected in the plurality of processing gas lines has the first flow rate monitoring unit, an important processing gas line can be selected and the flow rate can be constantly monitored. Therefore, for example, the gas flow path of the material gas for film formation which is easily deposited by the solid matter in the narrow tube portion of the flow rate control device has the first flow rate monitoring unit, and the flow rate of the process gas line which is prone to flow abnormality is always monitored. Precision. As a result, the yield of the semiconductor wafer can be effectively improved.

又，因為在從處理室之上游側流路所分支的排出流路具有第2流量監視單元，所以可高精度地測量從流量控制機器所排出之氣體壓力。這是由於以下的理由，從流量控制機器所排出之氣體壓力係比來自處理氣體供給源的高氣體壓力低，因為一般將吸引泵設置於排出流路，所以在第2流量監視單元，成為接近真空的低壓，而可使用高精度之隔膜式壓力計。 Further, since the discharge flow path branched from the upstream side flow path of the processing chamber has the second flow rate monitoring means, the gas pressure discharged from the flow rate control device can be measured with high accuracy. This is because the gas pressure discharged from the flow rate control device is lower than the high gas pressure from the processing gas supply source for the following reasons. Since the suction pump is generally disposed in the discharge flow path, the second flow rate monitoring unit is brought close to each other. The low pressure of the vacuum can be achieved with a high precision diaphragm pressure gauge.

又，因為具有控制部，該控制部係下指令成藉第1流量監視單元一直監視流量控制機器的流量，而且在第1流量監視單元檢查流量僅既定次數時藉由使第1流量監視單元及第2流量監視單元同時進行流量檢查，根據該第2流量監視單元之流量檢查結果修正是在該第1流量監視單元之流量檢查所算出的流量與以該流量控制機器所設定之流量的差異的檢查偏差量，所以一面一直監視流量控制機器的流量精度，一面根 據該高精度之第2流量監視單元的檢查結果校正一直監視之第1流量監視單元的檢查量，藉此，在系統整體上，可進行可靠性更高的流量監視。又，將藉第2流量監視單元之流量檢查減少至必要最低限度，可亦有助於提高在半導體製造裝置之氣體供給系統的運轉率。 Further, the control unit is configured to instruct the first flow rate monitoring unit to constantly monitor the flow rate of the flow rate control device, and to cause the first flow rate monitoring unit and the first flow rate monitoring unit to check the flow rate only for a predetermined number of times. The second flow rate monitoring unit performs the flow rate check at the same time, and corrects the flow rate check result of the second flow rate monitoring unit to be the difference between the flow rate calculated by the flow rate check of the first flow rate monitoring unit and the flow rate set by the flow rate control device. Check the amount of deviation, so always monitor the flow accuracy of the flow control machine, one side According to the inspection result of the high-precision second flow rate monitoring means, the amount of inspection of the first flow rate monitoring unit that has been monitored is corrected, whereby the reliability of the flow monitoring can be performed as a whole. Moreover, reducing the flow rate check by the second flow rate monitoring unit to the minimum necessary can also contribute to an increase in the operating rate of the gas supply system in the semiconductor manufacturing apparatus.

因此，若依據上述(2)的構成，可提供一種氣體流量監視系統，該氣體流量監視系統係一面一直監視流量控制機器(質量流量控制器等)的流量精度，一面在必要的情況，進行包含再檢查或流量監視單元本身的自動診斷之可靠性更高的流量檢查。 Therefore, according to the configuration of the above (2), it is possible to provide a gas flow rate monitoring system that monitors the flow rate accuracy of the flow rate control device (mass flow controller, etc.) while monitoring, and if necessary, includes Re-check or flow monitoring unit itself for automatic diagnostics with a more reliable flow check.

1、11A~11D‧‧‧處理氣體管路 1, 11A~11D‧‧‧ process gas pipeline

2、2B、2D‧‧‧第1流量監視單元 2, 2B, 2D‧‧‧ first flow monitoring unit

3‧‧‧第2流量監視單元 3‧‧‧2nd flow monitoring unit

4‧‧‧控制部 4‧‧‧Control Department

5‧‧‧處理室 5‧‧‧Processing room

6‧‧‧半導體製造裝置 6‧‧‧Semiconductor manufacturing equipment

10、10A~10D‧‧‧流量控制機器 10, 10A~10D‧‧‧ flow control machine

12、12A~12D‧‧‧第1管路遮斷閥 12, 12A~12D‧‧‧1st line shut-off valve

13、13A~13D‧‧‧第2管路遮斷閥 13, 13A~13D‧‧‧2nd pipeline shut-off valve

14‧‧‧下游側流路 14‧‧‧ downstream side flow path

15‧‧‧匯流後流路 15‧‧‧Flow path after confluence

16‧‧‧第1排出流路 16‧‧‧1st discharge channel

17‧‧‧第2排出流路 17‧‧‧2nd discharge channel

18‧‧‧吸引泵 18‧‧‧Attraction pump

21‧‧‧第1開始遮斷閥 21‧‧‧First start interrupt valve

22‧‧‧第1測量用槽 22‧‧‧1st measurement slot

23‧‧‧第1壓力計 23‧‧‧1st pressure gauge

24‧‧‧第1溫度計 24‧‧‧1st thermometer

25‧‧‧調壓器 25‧‧‧Regulator

26‧‧‧第1岐管 26‧‧‧1st tube

31‧‧‧第2開始遮斷閥 31‧‧‧2nd start interrupt valve

32‧‧‧第2測量用槽 32‧‧‧2nd measurement slot

33‧‧‧第2壓力計 33‧‧‧2nd pressure gauge

34‧‧‧第2溫度計 34‧‧‧2nd thermometer

35‧‧‧操作遮斷閥 35‧‧‧Operational shut-off valve

36‧‧‧第2岐管 36‧‧‧2nd tube

100‧‧‧氣體流量監視系統 100‧‧‧Gas flow monitoring system

第1圖係包含構成本發明之氣體流量監視系統的實施形態之氣體迴路的整體圖。 Fig. 1 is a general view of a gas circuit constituting an embodiment of a gas flow rate monitoring system of the present invention.

第2A圖係構成本實施形態之第1流量監視單元的氣體迴路。 Fig. 2A is a gas circuit constituting the first flow rate monitoring unit of the present embodiment.

第2B圖係在氣體流量檢查時的壓力線圖。 Figure 2B is a pressure line diagram at the time of gas flow check.

第3圖係使用本實施形態之第1流量監視單元一直監視流量控制機器(MFC)之流量精度時的壓力線圖。 Fig. 3 is a pressure line diagram when the flow rate accuracy of the flow rate control device (MFC) is always monitored by the first flow rate monitoring unit of the present embodiment.

第4圖係表示構成本實施形態之第1流量監視單元之零件的剖面圖。 Fig. 4 is a cross-sectional view showing the components constituting the first flow rate monitoring unit of the embodiment.

第5A圖係構成本實施形態之第2流量監視單元的氣體迴路。 Fig. 5A is a gas circuit constituting the second flow rate monitoring unit of the embodiment.

第5B圖係在氣體流量檢查時的壓力線圖。 Figure 5B is a pressure line diagram at the time of gas flow check.

第6圖係表示構成本實施形態之第2流量監視單元之零件的剖面圖。 Fig. 6 is a cross-sectional view showing the components constituting the second flow rate monitoring unit of the embodiment.

第7圖係本實施形態之氣體流量監視系統的第1控制流程圖。 Fig. 7 is a first control flowchart of the gas flow rate monitoring system of the present embodiment.

第8圖係本實施形態之氣體流量監視系統的第2控制流程圖。 Fig. 8 is a second control flowchart of the gas flow rate monitoring system of the present embodiment.

其次，參照圖面，詳細說明本發明之氣體流量監視系統的實施形態。在此，首先，在說明系統的整體構成、第1流量監視單元及第2流量監視單元後，說明其控制流程及作用效果。 Next, an embodiment of the gas flow rate monitoring system of the present invention will be described in detail with reference to the drawings. Here, first, the overall configuration of the system, the first flow rate monitoring unit, and the second flow rate monitoring unit will be described, and the control flow and effects will be described.

<氣體流量監視系統的整體構成> <Overall configuration of gas flow monitoring system>

首先，說明本實施形態之氣體流量監視系統的整體構成。在第1圖，表示包含構成本發明之氣體流量監視系統的實施形態之氣體迴路的整體圖。 First, the overall configuration of the gas flow rate monitoring system of the present embodiment will be described. Fig. 1 is a view showing an entire view of a gas circuit including an embodiment of a gas flow rate monitoring system of the present invention.

如第1圖所示，氣體流量監視系統100係包括第1流量監視單元2、第2流量監視單元3及控制部4，並配設於處理氣體管路1。 As shown in FIG. 1, the gas flow rate monitoring system 100 includes a first flow rate monitoring unit 2, a second flow rate monitoring unit 3, and a control unit 4, and is disposed in the process gas line 1.

處理氣體管路1係由複數條氣體管路11A~11D所構成，各氣體管路係使來自各個處理氣體供給源的氣體A~D經由第1管路遮斷閥12A~12D、流量控制機器10A~10D及第2管路遮斷閥13A~13D後，供給至既定處理室5。在處理氣體A~D，例如使用矽烷等之特殊氣體、或氯氣等之腐蝕性氣體、及氫氣或磷化氫等之可燃性氣體等。所供給之處理氣體的氣體 壓力係約0.4~0.5MPa。 The processing gas line 1 is composed of a plurality of gas lines 11A to 11D, and each of the gas lines causes the gases A to D from the respective processing gas supply sources to pass through the first line shutoff valves 12A to 12D and the flow rate control device. After 10A to 10D and the second line shutoff valves 13A to 13D, they are supplied to the predetermined processing chamber 5. In the processing gas A to D, for example, a special gas such as decane or a corrosive gas such as chlorine or a flammable gas such as hydrogen or phosphine is used. Gas supplied to the process gas The pressure system is about 0.4~0.5MPa.

如第1圖所示，在處理氣體管路1中所選擇之任意的處理氣體管路11B、11D，在第1管路遮斷閥12B、12D的上游側流路具有第1流量監視單元2B、2D。任意選定具有第1流量監視單元2之處理氣體管路1的理由係為了選定重要的處理氣體管路1，並可一直監視其流量。例如，這是由於在流量控制機器內之細管部分使用固態物易析出之成膜用材料氣體的氣體管路，藉由具有第1流量監視單元2，可一直監視流量的變化，而可迅速或確實地檢查出流量異常。 As shown in Fig. 1, any of the processing gas lines 11B and 11D selected in the processing gas line 1 has the first flow rate monitoring unit 2B in the upstream side flow path of the first line shutoff valves 12B and 12D. 2D. The reason for arbitrarily selecting the process gas line 1 having the first flow rate monitoring unit 2 is to select an important process gas line 1, and to monitor the flow rate at all times. For example, this is because the gas pipe for the film forming material gas which is easily precipitated by the solid matter is used in the thin tube portion of the flow rate control device, and the flow rate change can be constantly monitored by the first flow rate monitoring unit 2, and can be quickly or Strictly check for abnormal traffic.

第1流量監視單元2係藉由在是檢查對象之流量控制機器10(10B或10D)的前側測量在上游側流路之氣體壓力的壓降，來監視該流量控制機器10的流量。 The first flow rate monitoring unit 2 monitors the flow rate of the flow rate control device 10 by measuring the pressure drop of the gas pressure in the upstream side flow path on the front side of the flow rate control device 10 (10B or 10D) to be inspected.

第1管路遮斷閥12A~12D及第2管路遮斷閥13A~13D係供給流至流量控制機器10A~10D之處理氣體或使其停止的氣動閥。流量控制機器10A~10D例如是質量流量控制器，係將質量流量計與控制閥組合並進行回授控制，使可進行流量控制。因此，可穩定地排出設定成既定值的氣體流量。 The first line shutoff valves 12A to 12D and the second line shutoff valves 13A to 13D are supplied with a pneumatic valve that flows to or stops the process gas of the flow rate control devices 10A to 10D. The flow rate control devices 10A to 10D are, for example, mass flow controllers that combine a mass flow meter and a control valve and perform feedback control so that flow rate control can be performed. Therefore, the gas flow rate set to a predetermined value can be stably discharged.

第2管路遮斷閥13A~13D的下游側流路14係在處理室5的上游側藉匯流後流路15匯流。從匯流後流路15所分支之排出流路係具有第2流量監視單元3，此排出流路係由設置於第2流量監視單元3之上游側的第1排出流路16、與設置於第2流量監視單元3之下游側的第2排出流路17所構成。在檢查氣體流量時，將氣體從第1排出流路16供給至第2流量監視單元3，再從第2排出流路17排出至排出口(Vent)。第 2流量監視單元3可高精度地測量從流量控制機器10A~10D經由第1排出流路16所供給之氣體壓力。這是因為從流量控制機器10A~10D所排出之氣體壓力比來自處理氣體供給源的高氣體壓力低，一般將吸引泵18(參照第5圖)設置於第2排出流路17，所以在第2流量監視單元3，成為接近真空狀態的低壓，而可使用高精度之隔膜式壓力計等的緣故。 The downstream side flow path 14 of the second line shutoff valves 13A to 13D is connected to the flow path 15 by the flow path 15 on the upstream side of the processing chamber 5. The discharge flow path branched from the flow path 15 after the flow has the second flow rate monitoring unit 3, and the discharge flow path is provided by the first discharge flow path 16 provided on the upstream side of the second flow rate monitoring unit 3, and The second discharge flow path 17 on the downstream side of the flow rate monitoring unit 3 is configured. When the gas flow rate is checked, the gas is supplied from the first discharge flow path 16 to the second flow rate monitoring unit 3, and is discharged from the second discharge flow path 17 to the discharge port (Vent). First The flow rate monitoring unit 3 can accurately measure the gas pressure supplied from the flow rate control devices 10A to 10D via the first discharge flow path 16. This is because the gas pressure discharged from the flow rate control devices 10A to 10D is lower than the high gas pressure from the processing gas supply source, and generally the suction pump 18 (see FIG. 5) is provided in the second discharge flow path 17, so 2 The flow rate monitoring unit 3 has a low pressure close to a vacuum state, and a high-precision diaphragm type pressure gauge or the like can be used.

如第1圖所示，氣體流量監視系統100包括與第1流量監視單元2、第2流量監視單元3、及與流量控制機器10以電性連接的控制部4。控制部4係在氣體流量監視系統100的控制部，例如下指令成藉第1流量監視單元2一直監視流量控制機器10(例如作為對象的流量控制機器10B)的流量，而且在第1流量監視單元2偵測到複數次流量異常時藉第2流量監視單元3再檢查流量控制機器10有無流量異常，或下指令成藉第1流量監視單元2一直監視對象之流量控制機器10的流量，而且在第1流量監視單元2檢查流量僅既定次數時藉由使第1流量監視單元2及第2流量監視單元3同時進行流量檢查後，根據第2流量監視單元3之流量檢查結果修正第1流量監視單元2的檢查偏差量。又，例如在藉第2流量監視單元3判定流量控制機器10有流量異常，並可修正流量控制機器10之偏差量的情況，可根據來自控制部4的指令修正流量控制機器10的設定值。此外，關於控制部4的控制方法，將在後述的控制流程詳述。 As shown in FIG. 1, the gas flow rate monitoring system 100 includes a first flow rate monitoring unit 2, a second flow rate monitoring unit 3, and a control unit 4 electrically connected to the flow rate control device 10. The control unit 4 is instructed by the control unit of the gas flow rate monitoring system 100 to monitor the flow rate of the flow rate control device 10 (for example, the target flow rate control device 10B) by the first flow rate monitoring unit 2, and to monitor the flow rate of the first flow rate. When the unit 2 detects the abnormal flow rate abnormality, the second flow rate monitoring unit 3 checks whether the flow rate control device 10 has a flow abnormality or the flow rate control device 10 that the first flow rate monitoring unit 2 constantly monitors, and When the first flow rate monitoring unit 2 checks the flow rate for only a predetermined number of times, the first flow rate monitoring unit 2 and the second flow rate monitoring unit 3 simultaneously perform the flow rate check, and then correct the first flow rate based on the flow rate check result of the second flow rate monitoring unit 3. The amount of inspection deviation of the monitoring unit 2. Further, for example, when the second flow rate monitoring unit 3 determines that the flow rate control device 10 has an abnormal flow rate and can correct the amount of deviation of the flow rate control device 10, the set value of the flow rate control device 10 can be corrected based on an instruction from the control unit 4. Further, regarding the control method of the control unit 4, a control flow to be described later will be described in detail.

又，控制部4係與半導體製造裝置6以電性連接。因此，例如，亦可半導體製造裝置6係接受來自藉第2流量監 視單元3判定流量控制機器10有流量異常之控制部4的電性信號，並自動地採取停止運轉等的處置。在此情況，控制部4係亦可應付序列通訊或類比通訊之任一種。 Further, the control unit 4 is electrically connected to the semiconductor manufacturing apparatus 6. Therefore, for example, the semiconductor manufacturing apparatus 6 can also accept the second flow monitoring The visual unit 3 determines that the flow rate control device 10 has an electrical signal of the control unit 4 having an abnormal flow rate, and automatically takes a treatment such as stopping the operation. In this case, the control unit 4 can also cope with either sequence communication or analog communication.

<第1流量監視單元> <First flow monitoring unit>

其次，說明第1流量監視單元2的迴路構成。在第2A圖，表示構成本實施形態之第1流量監視單元2的氣體迴路圖，在第2B圖，表示在氣體流量檢查時的壓力線圖。在第3圖，表示使用本實施形態之第1流量監視單元2一直監視流量控制機器(MFC)之流量精度時的壓力線圖。在第4圖，表示構成本實施形態之第1流量監視單元2之零件的剖面圖。 Next, the circuit configuration of the first flow rate monitoring unit 2 will be described. Fig. 2A shows a gas circuit diagram constituting the first flow rate monitoring unit 2 of the present embodiment, and Fig. 2B shows a pressure line diagram at the time of gas flow rate inspection. Fig. 3 is a pressure line diagram showing the flow rate accuracy of the flow rate control device (MFC) being monitored by the first flow rate monitoring unit 2 of the present embodiment. Fig. 4 is a cross-sectional view showing the components constituting the first flow rate monitoring unit 2 of the present embodiment.

如第2A圖所示，第1流量監視單元2配設於處理氣體管路1之第1管路遮斷閥12的上游側流路。第1流量監視單元2係包括從氣體供給源側所依序配置的第1開始遮斷閥21、第1測量用槽22、第1壓力計23、第1溫度計24及調壓器25。 As shown in FIG. 2A, the first flow rate monitoring unit 2 is disposed in the upstream side flow path of the first line shutoff valve 12 of the process gas line 1. The first flow rate monitoring unit 2 includes a first start shutoff valve 21, a first measurement tank 22, a first pressure gauge 23, a first thermometer 24, and a pressure regulator 25 which are disposed in this order from the gas supply source side.

第1開始遮斷閥21係將來自氣體供給源的氣體供給至下游側或使其停止的氣動閥。第1測量用槽22係貯存定量之氣體的容器。第1測量用槽22的容積係根據流量控制機器10的流量來自定最佳的容積，例如是約50~60cc。在氣體流量檢查時，第1測量用槽22之容器內所貯存的氣體流出，而氣體壓力降低。第1壓力計23係測量第1測量用槽22之容器內所貯存的氣體之壓力降低的壓力計。第1壓力計23係為了可應付高壓氣體，例如使用應變規式壓力計。第1溫度計24係測量第1測量用槽22之容器內之氣體溫度的溫度計。調壓 器25係用以將供給至流量控制機器10之氣體的氣體壓力維持於定值的控制閥。例如，調壓器25的設定壓是約0.2MPa。 The first start shutoff valve 21 is a pneumatic valve that supplies the gas from the gas supply source to the downstream side or stops it. The first measurement tank 22 is a container for storing a predetermined amount of gas. The volume of the first measurement tank 22 is determined from the flow rate of the flow rate control device 10 to be an optimum volume, for example, about 50 to 60 cc. At the gas flow rate inspection, the gas stored in the container of the first measurement tank 22 flows out, and the gas pressure is lowered. The first pressure gauge 23 is a pressure gauge that measures a decrease in the pressure of the gas stored in the container of the first measurement tank 22. The first pressure gauge 23 is configured to cope with a high pressure gas, for example, a strain gauge type pressure gauge. The first thermometer 24 is a thermometer that measures the temperature of the gas in the container of the first measurement tank 22. Pressure regulation The device 25 is a control valve for maintaining the gas pressure of the gas supplied to the flow control device 10 at a constant value. For example, the set pressure of the pressure regulator 25 is about 0.2 MPa.

其次，說明第1流量監視單元2之流量監視方法，首先，說明一次之流量檢查方法。 Next, the flow rate monitoring method of the first flow rate monitoring unit 2 will be described. First, the flow rate check method will be described.

如第2B圖所示，關閉第1開始遮斷閥21時，因為來自氣體供給源的氣體被停止，所以第1測量用槽22之容器內所貯存的氣體流出，而氣體壓力降低。在氣體壓力之每單位時間的壓力下降率穩定成大致定值的階段(測量起點P1)，第1壓力計23測量氣體壓力。然後，在已經過固定時間的時間點(測量終點P2)，第1壓力計23再測量氣體壓力。求是測量起點P1的氣體壓力與測量終點P2之氣體壓力的差之壓力下降量△P、及從測量起點P1至測量終點P2的時間△t。因為△P/△t的值係與氣體流量成正比，所以對該值乘以比例係數，而算出從流量控制機器10供給至處理室5的氣體流量。比較所算出之氣體流量與在流量控制機器10所設定之氣體流量，若這些氣體流量間的差異(檢查偏差量)係位於既定基準值之範圍內，流量就正常。另一方面，若該差異係位於既定基準值之範圍外，流量就異常。 As shown in FIG. 2B, when the first start shutoff valve 21 is closed, since the gas from the gas supply source is stopped, the gas stored in the container of the first measurement tank 22 flows out, and the gas pressure is lowered. The pressure drop rate per unit time of the gas pressure is stabilized at a substantially constant value (measurement starting point P1), and the first pressure gauge 23 measures the gas pressure. Then, at the time point when the fixed time has elapsed (measurement end point P2), the first pressure gauge 23 measures the gas pressure again. The pressure drop amount ΔP which is the difference between the gas pressure of the measurement start point P1 and the gas pressure of the measurement end point P2, and the time Δt from the measurement start point P1 to the measurement end point P2 are obtained. Since the value of ΔP/Δt is proportional to the gas flow rate, the value is multiplied by the proportional coefficient, and the gas flow rate supplied from the flow rate control device 10 to the processing chamber 5 is calculated. Comparing the calculated gas flow rate with the gas flow rate set by the flow rate control device 10, if the difference (inspection deviation amount) between these gas flow rates is within a predetermined reference value, the flow rate is normal. On the other hand, if the difference is outside the range of the predetermined reference value, the flow rate is abnormal.

其次，說明使用上述之第1流量監視單元2一直監視流量控制機器10之流量精度的方法。 Next, a method of constantly monitoring the flow rate accuracy of the flow rate control device 10 using the above-described first flow rate monitoring unit 2 will be described.

在半導體製造裝置6之運轉中，根據來自控制部4的指令，以既定的時間間隔使第1開始遮斷閥21連續地開閉時，如第3圖所示，氣體供給壓力重複上昇下降。第1流量監視單元2係每當供給壓力下降，就根據壓力下降量與其時間檢 查流量。檢查結果係從控制部4作為監視輸出，傳達至半導體製造裝置6。 In the operation of the semiconductor manufacturing apparatus 6, when the first start shutoff valve 21 is continuously opened and closed at predetermined time intervals in accordance with an instruction from the control unit 4, as shown in Fig. 3, the gas supply pressure repeatedly rises and falls. The first flow rate monitoring unit 2 checks the pressure drop amount and the time thereof every time the supply pressure drops. Check the traffic. The inspection result is transmitted from the control unit 4 to the semiconductor manufacturing apparatus 6 as a monitor output.

氣體供給壓力重複上昇下降的時間間隔係可任意地設定，例如是從約數秒至數十秒。又，氣體供給壓力重複上昇下降時的壓力下限值係成為流量控制機器10的上游側壓力之調壓器25的設定壓力以上。這是由於若調壓器25的輸入側壓力是調壓器25的設定壓力以上，調壓器25的輸出側壓力就不會變動，而可將固定的氣體流量供給至流量控制機器10。結果，流量控制機器10的輸出側流量亦可維持定值。 The time interval in which the gas supply pressure is repeatedly increased and decreased can be arbitrarily set, for example, from about several seconds to several tens of seconds. In addition, the lower limit value of the pressure when the gas supply pressure is repeatedly increased and decreased is equal to or higher than the set pressure of the pressure regulator 25 on the upstream side of the flow rate control device 10. This is because if the input side pressure of the pressure regulator 25 is equal to or higher than the set pressure of the pressure regulator 25, the output side pressure of the pressure regulator 25 does not fluctuate, and a fixed gas flow rate can be supplied to the flow rate control device 10. As a result, the output side flow rate of the flow control machine 10 can also be maintained at a constant value.

藉此，可一面維持半導體製造裝置6的氣體供給系，一面使用第1流量監視單元2一直監視流量控制機器10的流量精度。 Thereby, the flow rate accuracy of the flow rate control device 10 can be constantly monitored by the first flow rate monitoring unit 2 while maintaining the gas supply system of the semiconductor manufacturing apparatus 6.

其次，說明上述之第1流量監視單元2的零件構成。 Next, the component configuration of the first flow rate monitoring unit 2 described above will be described.

如第4圖所示，從圖面左側依序將第1開始遮斷閥21、第1壓力計23、第1溫度計24、調壓器25載置於第1岐管26的上端。第1岐管26係形成大致矩形，並在內部鑽設第1測量用槽22。第1測量用槽22係形成矩形截面。在矩形截面上端的內壁，各自分別地分開並垂直面地鑽設與第1開始遮斷閥21之二次側流路212連通的流路262、與第1壓力計23連通的流路263、264、及與調壓器25之一次側流路253連通的流路265。第1溫度計24的感測器部241從位於第1壓力計23與調壓器25之間之第1測量用槽22之矩形截面上端的內壁突出至下方。將第1測量用槽22封閉之板狀的蓋構件221固 接於第1岐管26的下端。將設置於下端之輸入閥267與第1開始遮斷閥21之一次側流路211連通的流路261形成於第1岐管26的圖面左端。將設置於下端之輸出閥268與調壓器25之二次側流路259連通的流路266形成於第1岐管26的圖面右端。 As shown in FIG. 4, the first start shutoff valve 21, the first pressure gauge 23, the first thermometer 24, and the pressure regulator 25 are placed on the upper end of the first manifold 26 in order from the left side of the drawing. The first manifold 26 is formed in a substantially rectangular shape, and the first measurement groove 22 is drilled inside. The first measurement groove 22 is formed in a rectangular cross section. In the inner wall of the upper end of the rectangular cross section, a flow path 262 that communicates with the secondary side flow path 212 of the first start shutoff valve 21 and a flow path 263 that communicates with the first pressure gauge 23 are drilled separately and vertically. And 264 and a flow path 265 that communicates with the primary side flow path 253 of the pressure regulator 25. The sensor portion 241 of the first thermometer 24 protrudes from the inner wall of the upper end of the rectangular cross section of the first measurement groove 22 between the first pressure gauge 23 and the pressure regulator 25 to the lower side. The plate-shaped cover member 221 that closes the first measurement groove 22 is fixed Connected to the lower end of the first manifold 26. A flow path 261 that communicates with the input valve 267 provided at the lower end and the primary side flow path 211 of the first start shutoff valve 21 is formed at the left end of the first manifold 26 in the drawing. A flow path 266 that connects the output valve 268 provided at the lower end and the secondary side flow path 259 of the pressure regulator 25 is formed at the right end of the first manifold 26 in the drawing.

第1開始遮斷閥21係具有驅動部213與本體部214，藉氣體壓力操作的驅動部使隔膜215上下動，而供給氣體或停止供給。 The first start shutoff valve 21 has a drive unit 213 and a main body unit 214, and the drive unit operated by the gas pressure moves the diaphragm 215 up and down to supply the gas or stop the supply.

第1壓力計23係從與未圖示之感測器部連通的流路263、264直接測量第1測量用槽22內的氣體壓力。 The first pressure gauge 23 directly measures the gas pressure in the first measurement tank 22 from the flow paths 263 and 264 that communicate with the sensor unit (not shown).

第1溫度計24測量第1測量用槽22內的氣體温度。因為感測器部241從第1測量用槽22之矩形截面上端的內壁突出至下方，所以可更正確地測量第1測量用槽22內的氣體溫度。藉由測量氣體溫度，可確認氣體流量檢查時氣體的溫度變化，並使其反映至流量的計算。 The first thermometer 24 measures the temperature of the gas in the first measurement tank 22. Since the sensor portion 241 protrudes downward from the inner wall of the upper end of the rectangular cross section of the first measurement groove 22, the temperature of the gas in the first measurement groove 22 can be more accurately measured. By measuring the gas temperature, it is possible to confirm the temperature change of the gas during the gas flow check and reflect it to the calculation of the flow rate.

調壓器25包括調整機構部251與本體部250，調壓器25的設定壓力係藉調整機構部251之未圖示的調整機構調整。調整機構係調整未圖示之調整彈簧的偏壓力，使隔膜254上下動。隔膜254係被壓力控制室255的上端所覆設。在壓力控制室255，提動閥體256的突出部從下方突出，而與隔膜254抵接或分開。提動閥體256係收容於與一次側流路253連通的閥室258，並藉壓縮彈簧257偏壓至上方。與二次側流路259連通的回授流路252鑽設於壓力控制室255的下端。因此，調壓器25的二次側壓力經由回授流路252回授至壓力控制室 255。 The pressure regulator 25 includes an adjustment mechanism portion 251 and a main body portion 250, and the set pressure of the pressure regulator 25 is adjusted by an adjustment mechanism (not shown) of the adjustment mechanism portion 251. The adjustment mechanism adjusts the biasing force of the adjustment spring (not shown) to move the diaphragm 254 up and down. The diaphragm 254 is covered by the upper end of the pressure control chamber 255. In the pressure control chamber 255, the protruding portion of the poppet valve body 256 protrudes from below and abuts or separates from the diaphragm 254. The poppet valve body 256 is housed in a valve chamber 258 that communicates with the primary side flow path 253, and is biased upward by a compression spring 257. A feedback flow path 252 that communicates with the secondary side flow path 259 is drilled at the lower end of the pressure control chamber 255. Therefore, the secondary side pressure of the pressure regulator 25 is fed back to the pressure control chamber via the feedback flow path 252. 255.

<第2流量監視單元> <2nd flow monitoring unit>

其次，說明第2流量監視單元3的迴路構成。在第5A圖，表示構成本實施形態之第2流量監視單元3的氣體迴路圖，在第5B圖，表示在氣體流量檢查時的壓力線圖。在第6圖，表示構成本實施形態之第2流量監視單元3之零件的剖面圖。 Next, the circuit configuration of the second flow rate monitoring unit 3 will be described. Fig. 5A shows a gas circuit diagram constituting the second flow rate monitoring unit 3 of the present embodiment, and Fig. 5B shows a pressure line diagram at the time of gas flow rate inspection. Fig. 6 is a cross-sectional view showing the components constituting the second flow rate monitoring unit 3 of the present embodiment.

如第1圖所示，第2流量監視單元3配設於從處理氣體管路1之第2管路遮斷閥13(13A~13D)的下游側流路14所匯流之匯流後流路15所分支的排出流路16、17。而且，如第5A圖所示，第2流量監視單元3係包括從流量控制機器10側所依序配置的第2開始遮斷閥31、第2測量用槽32、第2壓力計33、第2溫度計34及操作遮斷閥35。 As shown in Fig. 1, the second flow rate monitoring unit 3 is disposed in the confluent flow path 15 which is converged from the downstream side flow path 14 of the second line shutoff valve 13 (13A to 13D) of the process gas line 1. Branched discharge channels 16, 17. In addition, as shown in FIG. 5A, the second flow rate monitoring unit 3 includes a second start shutoff valve 31, a second measurement tank 32, a second pressure gauge 33, and the like, which are arranged in this order from the flow rate control device 10 side. 2 thermometer 34 and operation shutoff valve 35.

第2開始遮斷閥31將來自流量控制機器10的氣體供給至第2測量用槽32或使其停止的氣動閥。第2測量用槽32係貯存定量之氣體的容器。第2測量用槽32的容積及從流量控制機器10的二次側至第2開始遮斷閥31之一次側的流路容積係根據流量控制機器10的流量選定最佳的容積，例如第2測量用槽32的容積是約10cc，從流量控制機器10的二次側至第2開始遮斷閥31之一次側的流路容積是約80~120cc。第2壓力計33係測量第2測量用槽32之容器內所貯存的氣體之壓力上昇的壓力計。第2壓力計33係為了可應付真空狀態的氣體，例如使用隔膜式的真空壓力計。第2溫度計34係測量第2測量用槽32之容器內之氣體溫度的溫度計。操作遮斷閥35係 將第2測量用槽32所貯存的氣體供給或係停止供給至吸引泵17的氣動閥。 The second start shutoff valve 31 supplies the gas from the flow rate control device 10 to the second measuring tank 32 or stops the pneumatic valve. The second measurement tank 32 is a container for storing a predetermined amount of gas. The volume of the second measurement tank 32 and the flow path volume from the secondary side of the flow rate control device 10 to the primary side of the second start shutoff valve 31 are selected according to the flow rate of the flow rate control device 10, for example, the second volume. The volume of the measurement tank 32 is about 10 cc, and the flow path volume from the secondary side of the flow control device 10 to the primary side of the second start shutoff valve 31 is about 80 to 120 cc. The second pressure gauge 33 measures a pressure gauge that increases the pressure of the gas stored in the container of the second measurement tank 32. The second pressure gauge 33 is a diaphragm type vacuum pressure gauge, for example, in order to cope with a gas in a vacuum state. The second thermometer 34 is a thermometer that measures the temperature of the gas in the container of the second measuring tank 32. Operating the shutoff valve 35 The gas stored in the second measurement tank 32 is supplied or stopped to the pneumatic valve of the suction pump 17.

其次，說明第2流量監視單元3之流量監視方法。 Next, the flow rate monitoring method of the second flow rate monitoring unit 3 will be described.

如第5B圖所示，在氣體流量檢查之前，關閉第2管路遮斷閥13A~13D，而且打開第2開始遮斷閥31及操作遮斷閥35，藉由以吸引泵18吸引而排出第2測量用槽32等所貯存的氣體。因為第2測量用槽32等所貯存的氣體被排出，所以氣體壓力降低而成為大致真空狀態。 As shown in Fig. 5B, before the gas flow rate check, the second line shutoff valves 13A to 13D are closed, and the second start shutoff valve 31 and the operation shutoff valve 35 are opened, and are discharged by suction by the suction pump 18. The gas stored in the second measurement tank 32 or the like. Since the gas stored in the second measurement tank 32 or the like is discharged, the gas pressure is lowered to be in a substantially vacuum state.

然後，打開在成為流量檢查之對象的處理氣體管路的第2管路遮斷閥13。此時，在其他的處理氣體管路的第2管路遮斷閥13係仍然關閉。在氣體流量穩定後，關閉操作遮斷閥35。於是，將從成為流量檢查之對象的處理氣體管路之流量控制機器10所供給的氣體貯存於第2測量用槽32等。在第2測量用槽32等，所貯存的氣體增加，而氣體壓力上昇。 Then, the second line shutoff valve 13 of the process gas line which is the target of the flow rate check is opened. At this time, the second line shutoff valve 13 in the other process gas line is still closed. After the gas flow rate is stabilized, the operation shutoff valve 35 is closed. Then, the gas supplied from the flow rate control device 10 of the processing gas line to be subjected to the flow rate inspection is stored in the second measurement tank 32 and the like. In the second measuring tank 32 or the like, the stored gas increases, and the gas pressure rises.

在氣體壓力之每單位時間的壓力上昇率穩定成大致定值的階段(測量起點P1)，第2壓力計33測量氣體壓力。然後，在已經過固定時間的時間點(測量終點P2)，第2壓力計33再測量氣體壓力。求是測量起點P1的氣體壓力與測量終點P2之氣體壓力的差之壓力上昇量△P、及從測量起點P1至測量終點P2的時間△t。因為△P/△t的值係與氣體流量成正比，所以對該值乘以比例係數，而算出從流量控制機器10所排出的氣體流量。 The pressure increase rate per unit time of the gas pressure is stabilized at a substantially constant value (measurement starting point P1), and the second pressure gauge 33 measures the gas pressure. Then, at the time point when the fixed time has elapsed (measurement end point P2), the second pressure gauge 33 measures the gas pressure again. The pressure rise amount ΔP which is the difference between the gas pressure of the measurement start point P1 and the gas pressure of the measurement end point P2, and the time Δt from the measurement start point P1 to the measurement end point P2 are obtained. Since the value of ΔP/Δt is proportional to the gas flow rate, the value is multiplied by the proportional coefficient, and the flow rate of the gas discharged from the flow rate control device 10 is calculated.

比較所算出之氣體流量與在流量控制機器10所設定之氣體流量，若這些氣體流量間的差異(檢查偏差量)係位於 既定基準值之範圍內，流量就正常。另一方面，若該差異係位於既定基準值之範圍外，流量就異常。在此情況，第2流量監視單元3係由於在壓力計使用隔膜式真空壓力計、在真空壓力計隔膜直徑大等的理由，可比使用應變規式壓力計之第1流量監視單元2進行更高精度的流量檢查。 Comparing the calculated gas flow rate with the gas flow rate set by the flow control device 10, if the difference between these gas flows (check deviation amount) is located The flow rate is normal within the range of the established reference value. On the other hand, if the difference is outside the range of the predetermined reference value, the flow rate is abnormal. In this case, the second flow rate monitoring unit 3 can be made higher than the first flow rate monitoring unit 2 using a strain gauge pressure gauge because the pressure gauge uses a diaphragm type vacuum pressure gauge and the diameter of the vacuum pressure gauge diaphragm is large. Accurate flow check.

其次，說明使用上述之第2流量監視單元3的零件構成。 Next, a component configuration using the above-described second flow rate monitoring unit 3 will be described.

如第6圖所示，從圖面左側依序將第2開始遮斷閥31、第2壓力計33及操作遮斷閥35載置於第2岐管36的上端。此外，第2岐管36係分支成3個矩形方塊36A~36C。以開口於圖面左右之矩形方塊36A、36C的上端的方式鑽設左右的V字形流路361、363，並在圖面中央之矩形方塊36B的上端，鑽設半圓形的流路362。 As shown in Fig. 6, the second start shutoff valve 31, the second pressure gauge 33, and the operation shutoff valve 35 are sequentially placed on the upper end of the second manifold 36 from the left side of the drawing. Further, the second manifold 36 is branched into three rectangular blocks 36A to 36C. The left and right V-shaped flow paths 361 and 363 are drilled so as to open at the upper ends of the rectangular blocks 36A and 36C on the left and right sides of the drawing, and a semicircular flow path 362 is drilled at the upper end of the rectangular block 36B at the center of the drawing.

又，在第2壓力計33之筒狀部332的下端，配設構成大致矩形並在內部鑽設第2測量用槽32的底座方塊333，第2壓力計33的真空室331與第2測量用槽32連通。第2測量用槽32係形成在下方凸出的彎曲截面。在底座方塊333，形成在圖面左下側傾斜的左傾斜流路321、在圖面右下側傾斜的右傾斜流路323及在兩者之中間所垂下的垂直流路322，各流路係開口於槽32的彎曲壁，並與底座方塊333的下端連通。 Further, at the lower end of the tubular portion 332 of the second pressure gauge 33, a base block 333 which is formed in a substantially rectangular shape and has the second measurement groove 32 drilled therein, and a vacuum chamber 331 and a second measurement of the second pressure gauge 33 are disposed. Connected by the slot 32. The second measurement groove 32 is formed in a curved cross section that protrudes downward. In the base block 333, a left inclined flow path 321 which is inclined at the lower left side of the drawing surface, a right inclined flow path 323 which is inclined at the lower right side of the drawing surface, and a vertical flow path 322 which is suspended between the two are formed, and each flow path is formed. Opening to the curved wall of the groove 32 and communicating with the lower end of the base block 333.

底座方塊333的下端與3個矩形方塊36A~36C的上端抵接，左傾斜流路321與左V字形流路361連通，右傾斜流路323與右V字形流路361連通。因為底座方塊333及3個矩形方塊36A~36C所形成之各流路的容積係包含於流量檢查 時之測量用槽的容積，所以能以提高流量檢查之精度的方式設定流路直徑或流路長度。 The lower end of the base block 333 abuts against the upper ends of the three rectangular blocks 36A to 36C, the left inclined flow path 321 communicates with the left V-shaped flow path 361, and the right inclined flow path 323 communicates with the right V-shaped flow path 361. Because the volume of each flow path formed by the base block 333 and the three rectangular blocks 36A to 36C is included in the flow check Since the volume of the measurement tank is used at the time, the flow path diameter or the flow path length can be set so as to improve the accuracy of the flow rate inspection.

第2開始遮斷閥31係由驅動部311與本體部312所構成，一次側流路313與二次側流路315形成於本體部312。在一次側流路313，形成與第1排出流路16之下游側連通的輸入通口314，並被供給氣體。二次側流路315係與左V字形流路361連通。 The second start shutoff valve 31 is constituted by the drive unit 311 and the main body portion 312, and the primary side flow path 313 and the secondary side flow path 315 are formed in the main body portion 312. In the primary side flow path 313, an input port 314 that communicates with the downstream side of the first discharge flow path 16 is formed, and a gas is supplied. The secondary side flow path 315 is in communication with the left V-shaped flow path 361.

操作遮斷閥35係由驅動部351與本體部352所構成，一次側流路353與二次側流路354形成於本體部352。一次側流路353與右V字形流路363連通。在二次側流路354，形成與第2排出流路17之上游側連通的輸出通口355，並排出氣體。 The operation shutoff valve 35 is constituted by the drive unit 351 and the main body portion 352, and the primary side flow path 353 and the secondary side flow path 354 are formed in the main body portion 352. The primary side flow path 353 is in communication with the right V-shaped flow path 363. In the secondary side flow path 354, an output port 355 that communicates with the upstream side of the second discharge flow path 17 is formed, and the gas is exhausted.

此外，第2溫度計34係在第6圖未圖示，為了測量第2壓力計33內之真空室內的氣體溫度，而附設於第2壓力計33。藉由更正確地測量第2壓力計33內的氣體溫度，可確認氣體流量檢查時之氣體的溫度變化，並反映至流量的計算。 In addition, the second thermometer 34 is not shown in FIG. 6, and is attached to the second pressure gauge 33 in order to measure the temperature of the gas in the vacuum chamber in the second pressure gauge 33. By measuring the temperature of the gas in the second pressure gauge 33 more accurately, the temperature change of the gas at the time of gas flow check can be confirmed and reflected in the calculation of the flow rate.

<氣體流量監視系統的控制流程> <Control flow of gas flow monitoring system>

其次，說明本實施形態之氣體流量監視系統100的控制流程。在第7圖，表示本實施形態的第1控制流程圖，在第8圖，表示本實施形態的第2控制流程圖。 Next, the control flow of the gas flow rate monitoring system 100 of the present embodiment will be described. Fig. 7 shows a first control flowchart of the embodiment, and Fig. 8 shows a second control flowchart of the embodiment.

首先，說明本實施形態之氣體流量監視系統100之控制流程的基本想法。本控制流程係由第1控制流程(參照第7圖)與第2控制流程(參照第8圖)所構成。 First, the basic idea of the control flow of the gas flow rate monitoring system 100 of the present embodiment will be described. This control flow is composed of a first control flow (see Fig. 7) and a second control flow (see Fig. 8).

第1控制流程係以在半導體製造裝置6運轉中一直監視為前提，以確實發現流量控制機器10的流量異常，並迅速地恢復正常。在本控制，需要2種流量監視單元(第1流量監視單元2、第2流量監視單元3)。而且，將第1流量監視單元2與第2流量監視單元3配設於流量控制機器10的上游側與下游側，並以控制部4進行靈活運用的控制。第1流量監視單元2係在流量控制機器10的上游側一面使處理氣體流動，一面一直監視是否流量異常。 The first control flow is based on the premise that the semiconductor manufacturing apparatus 6 is constantly monitored during operation, and it is found that the flow rate of the flow rate control device 10 is abnormal and quickly returns to normal. In the present control, two types of flow rate monitoring units (first flow rate monitoring unit 2 and second flow rate monitoring unit 3) are required. In addition, the first flow rate monitoring unit 2 and the second flow rate monitoring unit 3 are disposed on the upstream side and the downstream side of the flow rate control device 10, and the control unit 4 performs flexible control. The first flow rate monitoring unit 2 constantly monitors whether or not the flow rate is abnormal while flowing the processing gas on the upstream side of the flow rate control device 10.

可是，因為第1流量監視單元2係如上述所示流量檢查的可靠性低，所以在認為發生複數次流量異常時，判斷真地發生流量異常的可能性高後，使用流量檢查之可靠性更高的第2流量監視單元3，再進行流量檢查。在使用第2流量監視單元3再檢查時，因為使半導體製造裝置6停止運轉，所以使用第2流量監視單元3之再檢查係限定為流量異常之可能性高的情況。 However, since the first flow rate monitoring unit 2 has low reliability of the flow rate check as described above, when it is considered that a plurality of flow rate abnormalities have occurred, it is determined that the possibility of abnormal flow rate is high, and the reliability of the flow rate check is further improved. The high second flow rate monitoring unit 3 performs flow rate check. When the second flow rate monitoring unit 3 is used for re-inspection, the semiconductor manufacturing apparatus 6 is stopped. Therefore, the re-inspection using the second flow rate monitoring unit 3 is limited to the possibility that the flow rate is abnormal.

依此方式，一面藉第1流量監視單元2一直監視流量控制機器10的流量精度，一面在第1流量監視單元2一直監視中確認複數次流量異常時，藉精度更高的第2流量監視單元3再檢查，藉此，作為系統整體，可進行可靠性更高的流量監視。 In this manner, the first flow rate monitoring unit 2 monitors the flow rate accuracy of the flow rate control device 10, and when the first flow rate monitoring unit 2 monitors the plurality of flow rate abnormalities while monitoring, the second flow rate monitoring unit with higher accuracy is used. 3 Re-examine, as a whole, it is possible to perform more reliable traffic monitoring as a whole system.

第2控制流程係至第1流量監視單元2在流量控制機器10的上游側一面使處理氣體流動，一面一直監視是否流量異常上(S1、S2)，與第1控制流程相同。 In the second control flow, the first flow rate monitoring unit 2 monitors whether or not the flow rate is abnormal (S1, S2) while flowing the processing gas on the upstream side of the flow rate control device 10, and is the same as the first control flow.

相對第1控制流程係藉精度更高的第2流量監視 單元3使第1流量監視單元2所發現之流量控制機器10的流量異常確實且迅速地恢復正常的控制，第2控制流程係在藉精度更高之第2流量監視單元3定期地自動診斷第1流量監視單元2的控制上相異。即，是藉由使用流量檢查之可靠性高的第2流量監視單元3檢查流量檢查之可靠性低的第1流量監視單元2，並修正第1流量監視單元2的偏差量，而具有更提高第1流量監視單元2之流量檢查的可靠性之自動診斷功能的控制。 The second flow monitoring is performed with higher accuracy than the first control flow The unit 3 causes the flow rate of the flow rate control device 10 found by the first flow rate monitoring unit 2 to be abnormally and quickly returned to the normal control, and the second control flow automatically diagnoses the second flow rate monitoring unit 3 with higher accuracy. 1 The control of the flow monitoring unit 2 is different. In other words, the second flow rate monitoring unit 3, which is highly reliable in flow rate inspection, checks the first flow rate monitoring unit 2 with low reliability of the flow rate check, and corrects the amount of deviation of the first flow rate monitoring unit 2, thereby improving the amount of deviation. Control of the automatic diagnosis function of the reliability of the flow rate check by the first flow rate monitoring unit 2.

依此方式，藉由一面藉第1流量監視單元2一直監視流量控制機器10的流量精度，一面以高精度之第2流量監視單元3校正(自動診斷)一直監視之第1流量監視單元2的檢查流量，而在系統整體上，可進行可靠性更高的流量監視。 In this way, the first flow rate monitoring unit 2 monitors the accuracy of the flow rate of the flow rate control device 10, and corrects (automatically diagnoses) the first flow rate monitoring unit 2 that has been monitored by the second flow rate monitoring unit 3 with high accuracy. Check traffic, and perform more reliable traffic monitoring on the system as a whole.

其次，詳細說明第1控制流程。控制流程係一面參照第7圖，又，氣體迴路係一面參照第1圖、第2A圖、第5A圖，一面具體地說明。 Next, the first control flow will be described in detail. Referring to Fig. 7 for the control flow, the gas circuit system will be specifically described with reference to Fig. 1, Fig. 2A, and Fig. 5A.

首先，在S1，流量控制機器10的流量控制開始。然後，在S2，藉第1流量監視單元2一直監視流量控制機器10的流量。具體而言，根據來自控制部4的指令，第1流量監視單元2的第1開始遮斷閥21以既定的時間間隔重複打開、關閉，在第1壓力計23測量壓力下降量下連續地檢查流量。 First, at S1, the flow control of the flow control machine 10 starts. Then, at S2, the flow rate of the flow rate control device 10 is constantly monitored by the first flow rate monitoring unit 2. Specifically, the first start shutoff valve 21 of the first flow rate monitoring unit 2 is repeatedly opened and closed at predetermined time intervals in accordance with an instruction from the control unit 4, and is continuously inspected by the first pressure gauge 23 to measure the pressure drop amount. flow.

在S3，判定是否第1流量監視單元2的檢查次數達到N次，若未達到，在S4，確認有無流量異常。在此，N次係可根據過去的檢查數據等任意地設定，例如設定成約1000次。此外，在檢查次數達到N次時，移至是第2控制流程之定 期檢查的控制(A)。 In S3, it is determined whether or not the number of inspections by the first flow rate monitoring unit 2 has reached N times. If not, it is checked in S4 whether or not there is a flow rate abnormality. Here, the N-time system can be arbitrarily set based on past inspection data or the like, and is set, for example, to about 1000 times. In addition, when the number of inspections reaches N times, the move to the second control flow is determined. Control of period inspection (A).

在S4認定有流量異常時，在S5對流量異常的累積次數加1，在認定累積次數達到K次時，在S6移往流量控制機器10的檢查。在此，流量異常的判定值係可任意地設定，例如設定成約±5%。又，K次係可任意地設定，例如設定成約3次。 When it is determined that there is a flow abnormality in S4, the cumulative number of flow abnormalities is incremented by one at S5, and when the cumulative number of accumulations reaches K times, the inspection of the flow control device 10 is performed at S6. Here, the determination value of the flow rate abnormality can be arbitrarily set, for example, set to about ±5%. Further, the K-order system can be arbitrarily set, for example, set to about 3 times.

在S7，藉第2流量監視單元3之流量控制機器10的流量檢查開始。具體而言，根據來自控制部4的指令，打開第2流量監視單元3的操作遮斷閥35，並以吸引泵18使第2測量用槽32內的氣體壓力變成真空狀態後，關閉操作遮斷閥35，而且打開第2開始遮斷閥31，測量第2測量用槽32內之氣體壓力的壓力上昇量，檢查流量。因為第2流量監視單元3係如上述所示可進行高精度的流量檢查，所以在S8認定流量異常時，在S9確認是否可修正流量控制機器10的偏差量。在此，流量異常的判定值係可任意地設定，例如設定成約±1%。若可修正流量控制機器10的偏差量，在S10修正流量控制機器10的偏差量，在S11使處理開始。此外，在S9認定無法修正流量控制機器10的偏差量時，在S12移至更換流量控制機器10的檢查。結果，關於流量控制機器10之流量異常的最終認定、偏差量的修正及機器更換，係根據流量檢查可靠更高之第2流量監視單元3的檢查結果。 At S7, the flow rate check by the flow rate control device 10 of the second flow rate monitoring unit 3 is started. Specifically, according to an instruction from the control unit 4, the operation shutoff valve 35 of the second flow rate monitoring unit 3 is opened, and the suction pump 18 causes the gas pressure in the second measurement tank 32 to be in a vacuum state, and then the operation is closed. The valve 35 is opened, and the second start shutoff valve 31 is opened, and the pressure rise amount of the gas pressure in the second measurement tank 32 is measured, and the flow rate is checked. Since the second flow rate monitoring unit 3 can perform high-accuracy flow rate inspection as described above, when it is determined in S8 that the flow rate is abnormal, it is confirmed in S9 whether or not the amount of deviation of the flow rate control device 10 can be corrected. Here, the determination value of the flow rate abnormality can be arbitrarily set, for example, set to about ±1%. If the amount of deviation of the flow control device 10 can be corrected, the amount of deviation of the flow rate control device 10 is corrected in S10, and the process is started in S11. Further, when it is determined in S9 that the amount of deviation of the flow control device 10 cannot be corrected, the inspection at the flow rate control device 10 is shifted to S12. As a result, the final determination of the abnormality of the flow rate of the flow rate control device 10, the correction of the deviation amount, and the machine replacement are the inspection results of the second flow rate monitoring unit 3 which is more reliable according to the flow rate check.

依此方式，第1控制流程係根據可靠性高之第2流量監視單元3的檢查結果進行流量控制機器10之流量異常的最終判斷及處置，在系統整體上，一面實現可靠性高的流量 監視，一面防止運轉率超出必要地降低。 In this way, the first control flow performs the final determination and disposal of the abnormality of the flow rate of the flow rate control device 10 based on the inspection result of the second flow rate monitoring unit 3 with high reliability, and realizes highly reliable flow as a whole of the system. Monitoring prevents the operating rate from decreasing more than necessary.

其次，詳細說明第2控制流程。控制流程係一面參照第8圖，又，氣體迴路係一面參照第1圖、第2A圖、第5A圖，一面具體地說明。 Next, the second control flow will be described in detail. Referring to Fig. 8 for the control flow, the gas circuit system will be specifically described with reference to Fig. 1, Fig. 2A, and Fig. 5A.

在S3，判定檢查次數達到N次時，在S20，移至是第2控制流程之第1流量監視單元2(例如2B)之定期檢查的控制。在此情況，半導體製造裝置6停止運轉。在S21，同時使用第1流量監視單元2與第2流量監視單元3進行流量檢查。具體而言，同時測量第1壓力計23的壓力下降量與第2壓力計33的壓力上昇量來進行流量檢查。在S22，認定兩者所檢查之流量的偏差量不是X%以上時，在S25，修正第1流量監視單元2的偏差量後，在S28，使處理開始。在此情況，將藉第2流量監視單元3所估算之流量設為正，並將零點或係數修正成藉第1流量監視單元2所估算之流量與第2流量監視單元3的估算值吻合。此外，在第1控制流程，第1流量監視單元2係根據已藉第2流量監視單元3之流量檢查修正的流量監視，而在第2控制流程係以不進行根據第2流量監視單元3之流量檢查之修正的方式決定修正值。 When it is determined in S3 that the number of inspections has reached N times, the control proceeds to the periodic inspection of the first flow rate monitoring unit 2 (for example, 2B) of the second control flow in S20. In this case, the semiconductor manufacturing apparatus 6 is stopped. At S21, the flow rate check is performed using the first flow rate monitoring unit 2 and the second flow rate monitoring unit 3 at the same time. Specifically, the flow rate check is performed by simultaneously measuring the pressure drop amount of the first pressure gauge 23 and the pressure increase amount of the second pressure gauge 33. When it is determined in S22 that the amount of deviation of the flow rate checked by the two is not X% or more, the amount of deviation of the first flow rate monitoring means 2 is corrected in S25, and the process is started in S28. In this case, the flow rate estimated by the second flow rate monitoring unit 3 is set to be positive, and the zero point or coefficient is corrected so that the flow rate estimated by the first flow rate monitoring unit 2 coincides with the estimated value of the second flow rate monitoring unit 3. Further, in the first control flow, the first flow rate monitoring unit 2 performs flow rate monitoring based on the flow rate check correction by the second flow rate monitoring unit 3, and does not perform the second flow rate monitoring unit 3 in the second control flow. The way the flow check is corrected determines the correction value.

另一方面，在S22，認定兩者所檢查之流量的偏差量是X%以上時，在S23，同時使用其他的第1流量監視單元(例如2D)與第2流量監視單元3，再度進行流量檢查。在S24亦認定兩者所檢查之流量的偏差量是Y%以上時，在S26，認定第2流量監視單元3有故障的可能，並檢查、修理第2流量監視單元3。在S24，認定兩者所檢查之流量的偏差量不是Y%以 上時，在S27，認定是前面所使用之第1流量監視單元2(例如2B)的故障，並檢查、修理。此外，X%及Y%的判定值係可任意地設定，例如設定成約±1%。 On the other hand, if it is determined in S22 that the amount of deviation of the flow rate checked by the two is X% or more, the other first flow rate monitoring means (for example, 2D) and the second flow rate monitoring means 3 are simultaneously used in S23, and the flow rate is again performed. an examination. When it is determined in S24 that the amount of deviation of the flow rate checked by the two is Y% or more, the second flow rate monitoring unit 3 is determined to have a failure in S26, and the second flow rate monitoring unit 3 is inspected and repaired. At S24, it is determined that the deviation amount of the flow checked by the two is not Y%. In the case of the above, it is determined in S27 that the first flow rate monitoring unit 2 (for example, 2B) used in the foregoing has failed, and is inspected and repaired. Further, the determination values of X% and Y% can be arbitrarily set, for example, set to about ±1%.

依此方式，第2控制流程係藉由利用可靠性更高的第2流量監視單元3定期地對第1流量監視單元2進行自動診斷，而在系統整體上，一面實現可靠性更高的流量監視，一面防止運轉率超出必要地降低。 In this way, the second control flow automatically diagnoses the first flow rate monitoring unit 2 by the second flow rate monitoring unit 3 having higher reliability, and realizes more reliable traffic on the entire system. Monitoring prevents the operating rate from decreasing more than necessary.

<作用效果> <Action effect>

以上，如詳細說明所示，若依據本實施形態的氣體流量監視系統100，可提供一種氣體流量監視系統，該氣體流量監視系統係一面一直監視流量控制機器10的流量精度，一面在必要的情況，進行包含再檢查或流量監視單元本身的自動診斷之可靠性更高的流量檢查。 As described in detail above, according to the gas flow rate monitoring system 100 of the present embodiment, it is possible to provide a gas flow rate monitoring system that constantly monitors the flow rate accuracy of the flow rate control device 10 while being necessary. Perform a more reliable flow check including automatic inspection of the re-inspection or flow monitoring unit itself.

具體而言，若依據本實施形態，因為在複數條處理氣體管路1中所選擇之任意的處理氣體管路11B、11D具有第1流量監視單元2，所以可選定重要的處理氣體管路，一直監視流量。因此，例如，藉由在流量控制機器10內之細管部分使用固態物易析出之成膜用材料氣體的氣體管路具有第1流量監視單元2，一直監視易發生流量異常之處理氣體管路的流量精度，而可迅速地發現該異常。結果，可有效地實現半導體晶圓之良率的提高。 Specifically, according to the present embodiment, since any of the processing gas lines 11B and 11D selected in the plurality of processing gas lines 1 has the first flow rate monitoring unit 2, an important processing gas line can be selected. Always monitor traffic. Therefore, for example, the first flow rate monitoring unit 2 is provided in the gas line of the material gas for film formation which is easily deposited by the solid matter in the thin tube portion of the flow rate control device 10, and the process gas line which is prone to abnormal flow rate is always monitored. The flow accuracy is accurate and the anomaly can be quickly detected. As a result, the yield of the semiconductor wafer can be effectively improved.

又，因為在第2管路遮斷閥13的下游側流路14在處理室5的上游側匯流後從匯流後流路15所分支的排出流路16、17具有第2流量監視單元3，所以可高精度地測量從流 量控制機器10所排出之氣體壓力。可高精度地測量氣體壓力係基於以下的理由，從流量控制機器10所排出之氣體壓力，比來自處理氣體供給源的高氣體壓力低，因為一般將吸引泵18設置於排出流路16、17，所以在第2流量監視單元3，成為接近真空狀態的低壓，而可使用高精度之隔膜式真空壓力計。 In addition, the discharge flow paths 16 and 17 branched from the downstream flow path 15 after the downstream side flow path 14 of the second line shutoff valve 13 merges on the upstream side of the processing chamber 5 have the second flow rate monitoring unit 3, Therefore, the flow can be measured with high precision The amount of gas pressure discharged from the machine 10 is controlled. The gas pressure can be measured with high precision. The gas pressure discharged from the flow rate control device 10 is lower than the high gas pressure from the processing gas supply source because the suction pump 18 is generally disposed in the discharge flow paths 16 and 17 for the following reasons. Therefore, in the second flow rate monitoring unit 3, a low pressure close to a vacuum state is obtained, and a high-precision diaphragm type vacuum pressure gauge can be used.

又，若依據本實施形態，因為具有控制部4，該控制部4係下指令成藉第1流量監視單元2一直監視流量控制機器10的流量，而且在偵測到複數次第1流量監視單元2之流量異常時，藉第2流量監視單元3再檢查流量控制機器10有無流量異常，所以一面一直監視流量控制機器10的流量精度，一面在一直監視中確認複數次流量異常時，進行更高精度的再檢查，而可判定是第1流量監視單元2的誤差，或是流量控制機器10本身的異常。 Further, according to the present embodiment, since the control unit 4 is provided, the control unit 4 instructs the first flow rate monitoring unit 2 to constantly monitor the flow rate of the flow rate control device 10, and detects the plurality of first flow rate monitoring units 2 When the flow rate is abnormal, the second flow rate monitoring unit 3 checks the flow rate control device 10 for the flow rate abnormality. Therefore, while monitoring the flow rate accuracy of the flow rate control device 10, it is more accurate when it is confirmed that the flow rate is abnormal during the monitoring. The re-inspection can be determined to be an error of the first flow rate monitoring unit 2 or an abnormality of the flow rate control device 10 itself.

因此，藉由藉第2流量監視單元3補足第1流量監視單元2的流量精度，而在系統整體上，可進行可靠性更高的流量監視。又，將使氣體供給系統停止之藉第2流量監視單元3之流量檢查的次數減少至必要最低限度，可亦有助於提高在半導體製造裝置6之氣體供給系統的運轉率。 Therefore, by the second flow rate monitoring unit 3, the flow rate accuracy of the first flow rate monitoring unit 2 is complemented, and the reliability of the flow monitoring can be performed as a whole. Moreover, the number of times of the flow rate inspection by the second flow rate monitoring unit 3, which stops the gas supply system, is reduced to the minimum necessary, which contributes to an increase in the operating rate of the gas supply system in the semiconductor manufacturing apparatus 6.

又，若依據本實施形態，因為具有控制部4，該控制部4係下指令成藉第1流量監視單元2一直監視流量控制機器10的流量，而且在第1流量監視單元2已進行既定次數之流量檢查時，使第1流量監視單元2與第2流量監視單元3同時進行流量檢查，藉此，根據第2流量監視單元3的流量檢查結果修正第1流量監視單元2的檢查偏差量，所以藉由一面一 直監視流量控制機器10的流量精度，一面以高精度之第2流量監視單元3校正(自動診斷)一直監視之第1流量監視單元2的檢查量，而在系統整體上，可進行可靠性更高的流量監視。 Further, according to the present embodiment, since the control unit 4 is provided, the control unit 4 instructs the first flow rate monitoring unit 2 to constantly monitor the flow rate of the flow rate control device 10, and the first flow rate monitoring unit 2 has performed the predetermined number of times. In the flow rate inspection, the first flow rate monitoring unit 2 and the second flow rate monitoring unit 3 perform the flow rate check at the same time, thereby correcting the amount of inspection deviation of the first flow rate monitoring unit 2 based on the flow rate check result of the second flow rate monitoring unit 3, So by one side By monitoring the flow rate accuracy of the flow rate control device 10, the second flow rate monitoring unit 3 with high accuracy corrects (automatically diagnoses) the amount of inspection of the first flow rate monitoring unit 2 that has been monitored, and the reliability of the entire system can be improved. High traffic monitoring.

此外，本發明係未限定為上述的實施形態。可在不超出本發明之主旨的範圍內進行各種變更。 Further, the present invention is not limited to the above-described embodiments. Various changes can be made without departing from the spirit and scope of the invention.

在上述的實施形態，在第1控制流程，因為第1流量監視單元2之流量檢查的可靠性性，所以在認定複數次流量異常時，判斷真地發生流量異常的可能性高後，使用流量檢查之可靠性更高的第2流量監視單元3，進行流量檢查，並修正流量控制機器10的偏差量。此時，亦可藉由預先記憶流量控制機器10之偏差量(修正前的值)的履歷，進行流量控制機器10之偏差量的傾向監視。 In the above-described embodiment, in the first control flow, the reliability of the flow rate check by the first flow rate monitoring unit 2 is determined, and when it is determined that the flow rate abnormality is abnormal, the flow rate is determined to be high. The second flow rate monitoring unit 3 having higher reliability of inspection checks the flow rate and corrects the amount of deviation of the flow rate control device 10. At this time, the tendency of the deviation amount of the flow rate control device 10 can be monitored by memorizing the history of the deviation amount (the value before the correction) of the flow rate control device 10 in advance.

【工業上的可應用性】 [Industrial Applicability]

本發明係可利用於例如檢查在半導體製造裝置之處理氣體等的氣體供給系統所使用之流量控制機器(質量流量控制器等)之流量的氣體流量監視系統。 The present invention can be utilized, for example, in a gas flow rate monitoring system for inspecting the flow rate of a flow rate control device (mass flow controller, etc.) used in a gas supply system such as a process gas of a semiconductor manufacturing apparatus.

1、11A~11D‧‧‧處理氣體管路 1, 11A~11D‧‧‧ process gas pipeline

2、2B、2D‧‧‧第1流量監視單元 2, 2B, 2D‧‧‧ first flow monitoring unit

3‧‧‧第2流量監視單元 3‧‧‧2nd flow monitoring unit

4‧‧‧控制部 4‧‧‧Control Department

5‧‧‧處理室 5‧‧‧Processing room

6‧‧‧半導體製造裝置 6‧‧‧Semiconductor manufacturing equipment

10A~10D‧‧‧流量控制機器 10A~10D‧‧‧Flow Control Machine

12A~12D‧‧‧第1管路遮斷閥 12A~12D‧‧‧1st line shut-off valve

13A~13D‧‧‧第2管路遮斷閥 13A~13D‧‧‧2nd pipeline shut-off valve

14‧‧‧下游側流路 14‧‧‧ downstream side flow path

15‧‧‧匯流後流路 15‧‧‧Flow path after confluence

16‧‧‧第1排出流路 16‧‧‧1st discharge channel

17‧‧‧第2排出流路 17‧‧‧2nd discharge channel

100‧‧‧氣體流量監視系統 100‧‧‧Gas flow monitoring system

Claims (10)

一種氣體流量監視系統，係配設於使來自處理氣體供給源的氣體經由流量控制機器後供給至既定處理室的複數條處理氣體管路，並藉由測量在該流量控制機器的前後之氣體壓力的下降或上昇，而監視該流量控制機器的流量，其特徵在於包括：第1流量監視單元，係在該處理氣體管路中所選擇之任意的處理氣體管路之該流量控制機器的上游側流路所具備；第2流量監視單元，係在從該處理室之上游側流路所分支的排出流路所具備；及控制部，係下指令成藉該第1流量監視單元一直監視該流量控制機器的流量，而且在該第1流量監視單元偵測到複數次流量異常時藉該第2流量監視單元再檢查該流量控制機器有無流量異常。 A gas flow monitoring system is provided in a plurality of processing gas lines that supply gas from a processing gas supply source to a predetermined processing chamber via a flow control device, and measure gas pressure before and after the flow control machine The flow rate control device monitors the flow rate of the flow control device, and includes: a first flow rate monitoring unit, which is an upstream side of the flow rate control device of any process gas line selected in the process gas line The flow path is provided; the second flow rate monitoring unit is provided in a discharge flow path branched from the upstream side flow path of the processing chamber; and the control unit commands the first flow rate monitoring unit to monitor the flow rate at all times The flow rate of the machine is controlled, and when the first flow rate monitoring unit detects a plurality of abnormal flow rates, the second flow rate monitoring unit checks whether the flow rate control device has a flow abnormality. 如申請專利範圍第1項之氣體流量監視系統，其中該第1流量監視單元係包括從氣體供給源側所依序配置的第1開始遮斷閥、第1測量用槽、第1壓力計及調壓器；在該一直監視時，使該第1開始遮斷閥以既定的時間間隔連續地開閉，而在該第1測量用槽內之氣體供給壓力重複上昇、下降時的壓力下限值係成為該流量控制機器的上游側壓力之該調壓器的設定壓力以上。 The gas flow rate monitoring system according to the first aspect of the invention, wherein the first flow rate monitoring unit includes a first start shutoff valve, a first measurement tank, and a first pressure gauge that are sequentially disposed from a gas supply source side. In the case of the constant monitoring, the first starting shutoff valve is continuously opened and closed at predetermined time intervals, and the gas supply pressure in the first measuring tank repeatedly rises and falls. The pressure is equal to or higher than the set pressure of the pressure regulator on the upstream side of the flow control device. 如申請專利範圍第1或2項之氣體流量監視系統，其中在該第2流量監視單元，包括從該流量控制機器側所依序配置的第2開始遮斷閥、第2測量用槽、第2壓力計及操作遮 斷閥；將吸引泵設置於該排出流路；該第2流量監視單元係打開該操作遮斷閥，並以該吸引泵使該第2測量用槽內的氣體壓力變成真空狀態後，關閉該操作遮斷閥，而且打開該第2開始遮斷閥，測量該第2測量用槽內之氣體壓力的壓力上昇量，檢查流量。 The gas flow rate monitoring system according to claim 1 or 2, wherein the second flow rate monitoring unit includes a second start shutoff valve, a second measurement tank, and a second flow valve arranged in sequence from the flow rate control device side. 2 pressure gauge and operation cover a shut-off valve; the suction pump is disposed in the discharge flow path; the second flow rate monitoring unit opens the operation shutoff valve, and the gas pressure in the second measurement tank is changed to a vacuum state by the suction pump, and then the valve is closed The shutoff valve was operated, and the second start shutoff valve was opened, and the pressure rise amount of the gas pressure in the second measurement tank was measured, and the flow rate was checked. 如申請專利範圍第1項之氣體流量監視系統，其中該第1流量監視單元係在使用成膜用材料氣體的氣體管路所具備。 The gas flow rate monitoring system according to the first aspect of the invention, wherein the first flow rate monitoring unit is provided in a gas line using a material gas for film formation. 一種氣體流量監視系統，配設於使來自處理氣體供給源的氣體經由流量控制機器後供給至既定處理室的複數條處理氣體管路，並藉由測量在該流量控制機器的前後之氣體壓力的下降或上昇，而監視該流量控制機器的流量，其特徵在於包括：第1流量監視單元，係在該處理氣體管路中所選擇之任意的處理氣體管路之該流量控制機器的上游側流路所具備；第2流量監視單元，係在從該處理室之上游側流路所分支的排出流路所具備；及控制部，係下指令成藉第1流量監視單元一直監視對象之流量控制機器的流量，而且在該第1流量監視單元檢查流量僅既定次數時藉由使該第1流量監視單元及該第2流量監視單元同時進行流量檢查，根據該第2流量監視單元之流量檢查結果修正是在該第1流量監視單元之流量檢查所算出的流量與以該流量控制機器所設定之流量的差異的檢 查偏差量。 A gas flow monitoring system is provided in a plurality of processing gas lines for supplying gas from a processing gas supply source to a predetermined processing chamber via a flow control device, and measuring gas pressure before and after the flow control machine Descending or rising, and monitoring the flow rate of the flow control machine, characterized in that the first flow monitoring unit is an upstream side flow of the flow control device of any process gas line selected in the process gas line. The second flow rate monitoring unit is provided in the discharge flow path branched from the upstream side flow path of the processing chamber; and the control unit commands the flow control to be monitored by the first flow rate monitoring unit. When the first flow rate monitoring unit checks the flow rate for only a predetermined number of times, the first flow rate monitoring unit and the second flow rate monitoring unit simultaneously perform the flow rate check, and the flow rate check result of the second flow rate monitoring unit is performed. The correction is the difference between the flow rate calculated by the flow rate check of the first flow rate monitoring unit and the flow rate set by the flow rate control device. Check Check the amount of deviation. 如申請專利範圍第5項之氣體流量監視系統，其中該第1流量監視單元係包含複數個第1流量監視單元；認定在同時使用該複數個第1流量監視單元中的一個與該第2流量監視單元所進行的流量檢查之流量的偏差量係特定%以上時，同時使用該複數個第1流量監視單元中之其他的一個與該第2流量監視單元，再進行流量檢查。 The gas flow rate monitoring system of claim 5, wherein the first flow rate monitoring unit includes a plurality of first flow rate monitoring units; and it is determined that one of the plurality of first flow rate monitoring units is used simultaneously with the second flow rate When the amount of deviation of the flow rate of the flow rate check by the monitoring unit is equal to or greater than a specific %, the flow rate check is performed using the other one of the plurality of first flow rate monitoring units and the second flow rate monitoring unit. 如申請專利範圍第6項之氣體流量監視系統，其中在該再度流量檢查，亦認定該複數個第1流量監視單元中該其他的一個與該第2流量監視單元所檢查之流量的偏差量係其他的特定%以上時，認定該第2流量監視單元具有故障的可能性，而在認定該再度進行流量檢查之流量的偏差量不是其他的特定%以上時，認定該複數個第1流量監視單元中的該一個故障。 The gas flow monitoring system of claim 6, wherein the re-flow rate check determines that the deviation between the other one of the plurality of first flow rate monitoring units and the flow rate checked by the second flow rate monitoring unit is In the case of the other specific % or more, the second flow rate monitoring unit is determined to have a possibility of failure, and the plurality of first flow rate monitoring units are determined when the amount of deviation of the flow rate for which the flow rate check is performed again is not the other specific % or more. The one in the fault. 如申請專利範圍第5項之氣體流量監視系統，其中該第1流量監視單元係包括從氣體供給源側所依序配置的第1開始遮斷閥、第1測量用槽、第1壓力計及調壓器；在該一直監視時，使該第1開始遮斷閥以既定的時間間隔連續地開閉，而在該第1測量用槽內之氣體供給壓力重複上昇、下降時的壓力下限值係成為該流量控制機器的上游側壓力之該調壓器的設定壓力以上。 The gas flow rate monitoring system according to claim 5, wherein the first flow rate monitoring unit includes a first start shutoff valve, a first measurement tank, and a first pressure gauge that are sequentially disposed from a gas supply source side. In the case of the constant monitoring, the first starting shutoff valve is continuously opened and closed at predetermined time intervals, and the gas supply pressure in the first measuring tank repeatedly rises and falls. The pressure is equal to or higher than the set pressure of the pressure regulator on the upstream side of the flow control device. 如申請專利範圍第5或8項之氣體流量監視系統，其中在該第2流量監視單元，包括從該流量控制機器側所依序配置的第2開始遮斷閥、第2測量用槽、第2壓力計及操作遮 斷閥；將吸引泵設置於該排出流路；該第2流量監視單元係打開該操作遮斷閥，並以該吸引泵使該第2測量用槽內的氣體壓力變成真空狀態後，關閉該操作遮斷閥，而且打開該第2開始遮斷閥，測量該第2測量用槽內之氣體壓力的壓力上昇量，檢查流量。 The gas flow rate monitoring system according to claim 5, wherein the second flow rate monitoring unit includes a second start shutoff valve, a second measurement tank, and a second flow valve arranged in sequence from the flow control device side. 2 pressure gauge and operation cover a shut-off valve; the suction pump is disposed in the discharge flow path; the second flow rate monitoring unit opens the operation shutoff valve, and the gas pressure in the second measurement tank is changed to a vacuum state by the suction pump, and then the valve is closed The shutoff valve was operated, and the second start shutoff valve was opened, and the pressure rise amount of the gas pressure in the second measurement tank was measured, and the flow rate was checked. 如申請專利範圍第5項之氣體流量監視系統，其中該第1流量監視單元係在使用成膜用材料氣體的氣體管路所具備。 The gas flow rate monitoring system according to claim 5, wherein the first flow rate monitoring unit is provided in a gas line using a material gas for film formation.
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