TW201321533A - Ionization device and coating device using the same - Google Patents
Ionization device and coating device using the same Download PDFInfo
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- TW201321533A TW201321533A TW100143022A TW100143022A TW201321533A TW 201321533 A TW201321533 A TW 201321533A TW 100143022 A TW100143022 A TW 100143022A TW 100143022 A TW100143022 A TW 100143022A TW 201321533 A TW201321533 A TW 201321533A
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Abstract
Description
本發明涉及一種離化裝置及應用該離化裝置的鍍膜裝置，尤其涉及一種用以提高蒸料離化率的離化裝置。The invention relates to an ionization device and a coating device using the same, in particular to an ionization device for increasing the ionization rate of the steam.
習知採用蒸發鍍膜裝置進行鍍膜的方法為：在真空條件下，用電子束或熱電阻絲加熱的方法，將放置於坩堝之中的蒸料加熱至蒸發溫度，使其蒸料蒸發並沉積在基材上形成膜層。然而，在沉積成膜的過程中，蒸發的蒸料離化率不足，蒸料的能量低，沉積速率低，導致所鍍膜層與基材附著力較差，容易脫膜，且膜層的密度較小，因此難以製備出品質較好的膜層。The method of coating by using an evaporation coating device is as follows: under vacuum conditions, the steam placed in the crucible is heated to an evaporation temperature by electron beam or thermal resistance wire heating, and the evaporated material is evaporated and deposited. A film layer is formed on the substrate. However, in the process of deposition film formation, the evaporation rate of the vaporized material is insufficient, the energy of the steamed material is low, and the deposition rate is low, resulting in poor adhesion of the coating layer to the substrate, easy film release, and density of the film layer. Small, so it is difficult to prepare a film of good quality.
有鑒於此，提供一種能夠有提高蒸發鍍膜膜層與基材結合力的離化裝置。In view of the above, an ionization apparatus capable of improving the bonding force between an evaporation coating film layer and a substrate is provided.
另外，還有必要提供一種應用上述離化裝置的鍍膜裝置。In addition, it is also necessary to provide a coating apparatus using the above-described ionizing apparatus.
一種離化裝置，用於蒸發鍍膜裝置中，用以對蒸料原子或分子進行離化，該離化裝置包括主體及裝設於主體上的熱電子發射系統和磁場發生裝置，該主體呈管狀結構，該主體包括一側壁，側壁圍成腔體；該熱電子發射系統包括設置於腔體內或腔體邊緣的電阻絲，該電阻絲與主體之間設置有直流電壓；該磁場發生裝置包括設置於側壁上的複數個永磁體。An ionizing device for evaporating a coating device for ionizing a vapor atom or a molecule, the ionizing device comprising a body and a thermal electron emission system and a magnetic field generating device mounted on the body, the body being tubular The structure includes a sidewall, the sidewall enclosing the cavity; the thermal electron emission system includes a resistance wire disposed in the cavity or at the edge of the cavity, and a DC voltage is disposed between the resistance wire and the body; the magnetic field generating device includes a setting a plurality of permanent magnets on the sidewall.
一種應用離化裝置的蒸發鍍膜裝置，該蒸發鍍膜裝置包括反應室及設置於反應室內的坩堝，該離化裝置設置於坩堝上方，該離化裝置包括主體及裝設於主體上的熱電子發射系統和磁場發生裝置，該主體呈管狀結構，該主體包括一側壁，側壁圍成腔體；該熱電子發射系統包括設置於腔體內或腔體邊緣的電阻絲，該電阻絲與主體之間設置有直流電壓；該磁場發生裝置包括設置於側壁上的複數個永磁體。An evaporation coating device using an ionization device, the evaporation coating device comprising a reaction chamber and a crucible disposed in the reaction chamber, the ionization device being disposed above the crucible, the ionization device comprising a main body and a thermal electron emission mounted on the main body a system and a magnetic field generating device, the main body has a tubular structure, the main body includes a side wall, and the side wall encloses a cavity; the thermal electron emission system includes a resistance wire disposed in the cavity or at the edge of the cavity, and the resistance wire is disposed between the resistance wire and the main body There is a DC voltage; the magnetic field generating device includes a plurality of permanent magnets disposed on the sidewalls.
本發明離化裝置應用於蒸發鍍膜裝置中，其可對蒸料原子或蒸料分子進行離化，進而提高蒸料的能量和沉積速率，使用該離化裝置所製得的膜層與基材結合力較強，且膜層的品質高。The ionization device of the invention is applied to an evaporation coating device, which can ionize the vapor atom or the vapor molecule, thereby increasing the energy and deposition rate of the steam material, and the film layer and the substrate prepared by using the ionization device. The bonding force is strong and the quality of the film layer is high.
請參閱圖1，本發明離化裝置100，其用於蒸發鍍膜裝置(圖未示)中，不僅可對氣體進行離化，還可將蒸料原子或分子進行離化。Referring to FIG. 1, the ionizing device 100 of the present invention is used in an evaporation coating device (not shown) to not only ionize a gas but also ionize a vapor atom or molecule.
該離化裝置100包括一主體10及裝設於主體10上的熱電子發射系統20、磁場發生裝置30。The ionization device 100 includes a main body 10 and a thermal electron emission system 20 and a magnetic field generating device 30 mounted on the main body 10.
該主體10為管狀結構，且上下端均為開口設置。該主體10包括一側壁12，該側壁12圍成一腔體11。該側壁12的厚度為1-5cm，優選3cm。該主體10的材質為導電導熱性能良好的金屬或合金，如鋁、不銹鋼或銅等，優選為銅。該主體10的大小依據蒸發鍍膜裝置中的坩堝(圖未示)的大小進行設計，通常主體10的直徑為坩堝直徑的1-3倍，優選為1.5倍。The main body 10 has a tubular structure, and the upper and lower ends are all open. The body 10 includes a side wall 12 that encloses a cavity 11. The side wall 12 has a thickness of 1-5 cm, preferably 3 cm. The material of the main body 10 is a metal or an alloy having good electrical and thermal conductivity, such as aluminum, stainless steel or copper, and preferably copper. The size of the main body 10 is designed according to the size of the crucible (not shown) in the evaporative coating apparatus. Usually, the diameter of the main body 10 is 1-3 times, preferably 1.5 times the diameter of the crucible.
請參閱圖2，該熱電子發射系統20包括一電阻絲21及二絕緣墊23。該電阻絲21設置於腔體11內，且平行於側壁12。該二絕緣墊23穿過側壁12，且分別固接電阻絲21的兩端，從而使電阻絲21固定於腔體11內。該電阻絲21的材質為鎢或硼化鑭。該絕緣墊23為陶瓷材質。該電阻絲21連通一第一電源25，開啟該第一電源25，可使電阻絲21通電產生大量熱量至發光狀態，並向腔體11中發射熱電子。Referring to FIG. 2, the thermal electron emission system 20 includes a resistance wire 21 and two insulating pads 23. The resistance wire 21 is disposed within the cavity 11 and parallel to the sidewall 12. The two insulating pads 23 pass through the side walls 12 and are respectively fixed to both ends of the electric resistance wires 21, thereby fixing the electric resistance wires 21 in the cavity 11. The material of the electric resistance wire 21 is tungsten or tantalum boride. The insulating pad 23 is made of ceramic material. The resistance wire 21 is connected to a first power source 25, and the first power source 25 is turned on, so that the resistance wire 21 can be energized to generate a large amount of heat to the light-emitting state, and the hot electrons are emitted into the cavity 11.
該主體10與電阻絲21連接有一直流電源15，使主體10與電阻絲21間形成直流電壓，該主體10的外壁連接直流電源15的正極，該電阻絲21連接直流電源15的負極，即主體10的電位高於電阻絲21的電位。開啟直流電源15，可使腔體11內產生由主體10指向電阻絲21方向的電場，如圖3所示。The main body 10 and the resistance wire 21 are connected to a DC power source 15 to form a DC voltage between the main body 10 and the resistance wire 21. The outer wall of the main body 10 is connected to the positive pole of the DC power source 15, and the resistance wire 21 is connected to the negative pole of the DC power source 15, that is, the main body. The potential of 10 is higher than the potential of the resistance wire 21. When the DC power source 15 is turned on, an electric field in the direction of the resistance wire 21 from the main body 10 is generated in the cavity 11, as shown in FIG.
該磁場發生裝置30包括複數個永磁體31。該複數個永磁體31等間隔固定設置於主體10的外壁上，且相鄰的二永磁體31的極性設置相反。每一永磁體31為豎直放置，即每一永磁體31的N極和S極的連線平行於主體10的縱向方向。該複數個永磁體31的數量為偶數個。本實施例中，永磁體31的數量為四個。該磁場發生裝置30產生垂直於電場線的恒定磁場。The magnetic field generating device 30 includes a plurality of permanent magnets 31. The plurality of permanent magnets 31 are fixedly disposed on the outer wall of the main body 10 at equal intervals, and the polarities of the adjacent two permanent magnets 31 are oppositely set. Each permanent magnet 31 is placed vertically, that is, the line connecting the N pole and the S pole of each permanent magnet 31 is parallel to the longitudinal direction of the body 10. The number of the plurality of permanent magnets 31 is an even number. In the present embodiment, the number of the permanent magnets 31 is four. The magnetic field generating device 30 produces a constant magnetic field perpendicular to the electric field lines.
該離化裝置100還可以根據需要設置冷卻管(圖未示)以對離化裝置100進行降溫。該冷卻管緊貼於主體10的外壁設置，且沿主體10的縱向方向螺旋延伸。該冷卻管內流通的冷卻媒介可為水或氟氯烴。該冷卻管還連接有一泵組(圖未示)，以驅動冷卻媒介在冷卻管中流通。當冷卻媒介在冷卻管內流通時，可對離化裝置100進行降溫。The ionization device 100 can also provide a cooling tube (not shown) to cool the ionization device 100 as needed. The cooling tube is disposed in close contact with the outer wall of the main body 10 and spirally extends in the longitudinal direction of the main body 10. The cooling medium circulating in the cooling tube can be water or a chlorofluorocarbon. The cooling tube is also connected to a pump set (not shown) to drive the cooling medium to circulate in the cooling tube. The ionization device 100 can be cooled as the cooling medium circulates within the cooling tube.
請參閱圖4，該主體10上也可以開設一缺口13，該電阻絲21也可設置於缺口13處，並通過焊接的方式將電阻絲21固定連接於主體10上，且電阻絲21與主體10之間的連接為非導電式連接。Referring to FIG. 4, a notch 13 may be formed in the main body 10. The electric resistance wire 21 may also be disposed at the notch 13, and the electric resistance wire 21 is fixedly connected to the main body 10 by welding, and the electric resistance wire 21 and the main body The connection between 10 is a non-conductive connection.
應用該離化裝置100工作時，將其放入一蒸發鍍膜裝置(圖未示)中的坩堝(圖未示)上方；開啟第一電源25使電阻絲21通電，開啟直流電源15使主體10與電阻絲21間形成直流電勢差。電阻絲21產生的熱電子沿著電場線的反方向向主體10加速運動，並在磁場作用下，熱電子被束縛在腔體11內作環形運動，形成環形的霍爾電流；坩堝內的蒸料原子或分子經蒸發從主體10底部進入腔體11內，並與運動的熱電子發生碰撞進而被離化，成為帶電的蒸料離子體。此外，蒸發鍍膜裝置內的氣體原子或分子也可與熱電子發生碰撞進而被離化。When the ionizing device 100 is operated, it is placed above a crucible (not shown) in an evaporation coating device (not shown); the first power source 25 is turned on to energize the resistance wire 21, and the DC power source 15 is turned on to enable the main body 10 A DC potential difference is formed between the resistance wires 21. The hot electrons generated by the resistance wire 21 accelerate toward the main body 10 along the opposite direction of the electric field line, and under the action of the magnetic field, the hot electrons are bound in the cavity 11 for circular motion to form a ring-shaped Hall current; steaming in the crucible The atoms or molecules are vaporized from the bottom of the main body 10 into the cavity 11 and collide with the moving hot electrons to be ionized, thereby becoming a charged vapor ion. In addition, gas atoms or molecules in the evaporation coating device may collide with the hot electrons to be ionized.
可以理解的，永磁體31的數量可以根據實際需要進行增加或減少。It can be understood that the number of permanent magnets 31 can be increased or decreased according to actual needs.
本發明離化裝置100應用於蒸發鍍膜裝置中，其可對蒸料原子或蒸料分子進行離化，進而提高蒸料的能量和沉積速率，使用該離化裝置100所製得的膜層與基材結合力較強，且膜層的品質高。The ionization device 100 of the present invention is applied to an evaporation coating device, which can ionize a vapor atom or a vapor molecule, thereby increasing the energy and deposition rate of the steam material, and the film layer obtained by using the ionization device 100 and The substrate has strong binding force and the quality of the film layer is high.
100．．．離化裝置100. . . Ionization device
10．．．主體10. . . main body
11．．．腔體11. . . Cavity
12．．．側壁12. . . Side wall
13．．．缺口13. . . gap
15．．．直流電源15. . . DC power supply
20．．．熱電子發射系統20. . . Thermal electron emission system
21．．．電阻絲twenty one. . . Resistance wire
23．．．絕緣墊twenty three. . . Insulation pad
25．．．第一電源25. . . First power supply
30．．．磁場發生裝置30. . . Magnetic field generating device
31．．．永磁體31. . . Permanent magnets
圖1為本發明一較佳實施例的離化裝置的示意圖；1 is a schematic view of an ionization device according to a preferred embodiment of the present invention;
圖2為圖1中離化裝置沿II-II方向的剖視示意圖；Figure 2 is a cross-sectional view of the ionization device of Figure 1 taken along the line II-II;
圖3為本發明一較佳實施例的離化裝置的俯視示意圖；3 is a top plan view of an ionization device according to a preferred embodiment of the present invention;
圖4為本發明另一較佳實施例的離化裝置的俯視示意圖。4 is a top plan view of an ionization device according to another preferred embodiment of the present invention.
100．．．離化裝置100. . . Ionization device
10．．．主體10. . . main body
11．．．腔體11. . . Cavity
12．．．側壁12. . . Side wall
15．．．直流電源15. . . DC power supply
20．．．熱電子發射系統20. . . Thermal electron emission system
21．．．電阻絲twenty one. . . Resistance wire
23．．．絕緣墊twenty three. . . Insulation pad
25．．．第一電源25. . . First power supply
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| CN2011103711232A CN103122450A (en) | 2011-11-21 | 2011-11-21 | Ionization device and coating device applying same |
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| TW201321533A true TW201321533A (en) | 2013-06-01 |
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| CN1053645A (en) * | 1990-01-24 | 1991-08-07 | 机械电子工业部北京机械工业自动化研究所 | Plating titanium nitride mixed with gold ions technology and equipment |
| GB9006073D0 (en) * | 1990-03-17 | 1990-05-16 | D G Teer Coating Services Limi | Magnetron sputter ion plating |
| CN1035780C (en) * | 1993-11-24 | 1997-09-03 | 中国科学院空间科学与应用研究中心 | Electronic beam evapouring metal ion source for material surface modification |
| JP2002053955A (en) * | 2000-08-04 | 2002-02-19 | Canon Inc | Apparatus and method for ionized film deposition |
| CN100513634C (en) * | 2004-09-22 | 2009-07-15 | 郑州赛铠科贸有限责任公司 | Composite thin film preparation and preparing apparatus |
| CN101698934B (en) * | 2009-10-23 | 2011-06-15 | 武汉大学 | Hollow cathode electric arc ion coating plating system |
| CN201850306U (en) * | 2010-08-17 | 2011-06-01 | 中国人民解放军第四军医大学 | Mini type plasma film coating device for stomatological department |
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