TW201320260A - Laminate and method for producing component for power semiconductor modules - Google Patents

Laminate and method for producing component for power semiconductor modules Download PDF

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TW201320260A
TW201320260A TW101139807A TW101139807A TW201320260A TW 201320260 A TW201320260 A TW 201320260A TW 101139807 A TW101139807 A TW 101139807A TW 101139807 A TW101139807 A TW 101139807A TW 201320260 A TW201320260 A TW 201320260A
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insulating layer
weight
inorganic filler
less
laminate according
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TW101139807A
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TWI543312B (en
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Hiroshi Maenaka
Syunsuke Kondou
Takashi Watanabe
Isao Higuchi
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Sekisui Chemical Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/30—Properties of the layers or laminate having particular thermal properties
    • B32B2307/302—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Laminated Bodies (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Provided is a laminate wherein an insulating layer has high thermal conductivity and the insulating layer exhibits high adhesion to a conductive layer. A laminate (1) of the present invention comprises: a heat conductive body (2) that has a thermal conductivity of 10 W/mK or more; a first insulating layer (3) that is arranged on the surface of the heat conductive body (2); and a second insulating layer (4) that is arranged on the surface of the first insulating layer (3). The laminate (1) is used with a conductive layer that is arranged on the second insulating layer (4). The first insulating layer (3) contains an inorganic filler that has a thermal conductivity of 10 W/mK or more in an amount of 86% by weight or more but less than 97% by weight, and the second insulating layer (4) contains an inorganic filler in an amount of 67% by weight or more but less than 95% by weight. The curing ratio of the first insulating layer (3) is 50% or more, the curing ratio of the second insulating layer (4) is less than 80%, and the curing ratio of the first insulating layer (3) is larger than the curing ratio of the second insulating layer (4).

Description

積層體及功率半導體模組用零件之製造方法 Method for manufacturing parts for laminated body and power semiconductor module

本發明係關於一種具備導熱率為10 W/m．K以上之導熱體與絕緣層、且於該絕緣層上積層有導電層而使用的積層體。又，本發明係關於一種使用有該積層體之功率半導體模組用零件之製造方法。 The invention relates to a thermal conductivity of 10 W/m. A layered body used for a heat conductor and an insulating layer of K or more and a conductive layer laminated on the insulating layer. Moreover, the present invention relates to a method of manufacturing a component for a power semiconductor module using the laminated body.

近年來，電氣設備之小型化及高性能化正不斷進展。伴隨於此，電子零件之安裝密度提高，使自電子零件產生之熱發散之必要提高。業界廣泛採用將具有較高之散熱性且導熱率為10 W/m．K以上之導熱體接著於發熱源的方法作為使熱發散之方法。又，為了將該導熱體接著於發熱源，可使用具有絕緣性之絕緣接著材料。 In recent years, miniaturization and high performance of electrical equipment are progressing. Along with this, the mounting density of electronic components is increased, and it is necessary to increase the heat generated from the electronic components. Widely used in the industry, it will have high heat dissipation and thermal conductivity of 10 W/m. A method in which a heat conductor of K or more is followed by a heat source is used as a method of dissipating heat. Further, in order to connect the heat conductor to the heat source, an insulating insulating material having an insulating property can be used.

於下述專利文獻1中揭示有使用有上述絕緣接著材料之電氣設備之一例。於專利文獻1中，揭示有複數條導線自模具樹脂突出之功率用半導體裝置。具體而言，於專利文獻1中，揭示有如下功率用半導體裝置，其包括：第1導線，其包含第1晶片焊墊部；功率晶片，其載置於該第1晶片焊墊部之正面；絕緣片材，其安裝於上述第1晶片焊墊部之背面且由導熱率大於上述模具樹脂之樹脂形成；第2導線，其包含第2晶片焊墊部；控制晶片，其載置於該第2晶片焊墊部上；金屬線，其將上述功率晶片與上述控制晶片直接連接且主成分為金；及上述模具樹脂，其以上述第1導線與上述第2導線之端部分別突出之方式填埋上述控制 晶片與上述功率晶片。該功率用半導體裝置於上述絕緣片材與上述模具樹脂之界面具有混合有各材料之混合層。 An example of an electric device using the above-described insulating bonding material is disclosed in Patent Document 1 below. Patent Document 1 discloses a power semiconductor device in which a plurality of wires protrude from a mold resin. Specifically, Patent Document 1 discloses a power semiconductor device including: a first lead wire including a first wafer pad portion; and a power chip placed on a front surface of the first wafer pad portion An insulating sheet mounted on a back surface of the first wafer pad portion and formed of a resin having a thermal conductivity higher than that of the mold resin; a second wire including a second wafer pad portion; and a control wafer placed on the insulating wafer a second wafer pad portion; a metal wire directly connecting the power chip to the control wafer and having a main component of gold; and the mold resin protruding from an end portion of the first wire and the second wire Way to landfill the above control The wafer and the above power chip. The power semiconductor device has a mixed layer in which each material is mixed at the interface between the insulating sheet and the mold resin.

又，於專利文獻1中，記載有可於絕緣片材中使用包含選自Al2O3、Si3N4、AlN等陶瓷、SiO2、以絕緣材料塗佈之金屬中之至少一種以上之材料之微粒子的樹脂。 Further, Patent Document 1 discloses that at least one of a metal selected from a ceramic selected from the group consisting of Al 2 O 3 , Si 3 N 4 , and AlN, SiO 2 , and a metal coated with an insulating material can be used for the insulating sheet. The resin of the fine particles of the material.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利第4146785號公報 [Patent Document 1] Japanese Patent No. 4146785

如上所述，近年來，電氣設備之小型化及高性能化正不斷進展，使自電子零件產生之熱發散之必要提高。尤其是於專利文獻1所記載之功率用半導體裝置等功率半導體模組等中，容易自發熱源產生相當大之熱量。 As described above, in recent years, miniaturization and high performance of electrical equipment are progressing, and it is necessary to increase the heat generated from electronic components. In particular, in a power semiconductor module or the like such as a power semiconductor device described in Patent Document 1, it is easy to generate a considerable amount of heat from a heat source.

然而，於使用如專利文獻1所記載之先前之絕緣片材之情形時，存在絕緣層之導熱率降低，無法獲得充分之散熱性之情況。進而，於經由絕緣層將導熱率為10 W/m．K以上之導熱體接著於導線等導電層時，存在絕緣層與導電層之接著性降低之情況。 However, in the case of using the prior insulating sheet as described in Patent Document 1, the thermal conductivity of the insulating layer is lowered, and sufficient heat dissipation cannot be obtained. Further, the thermal conductivity is 10 W/m through the insulating layer. When the heat conductor of K or more is bonded to a conductive layer such as a wire, the adhesion between the insulating layer and the conductive layer may be lowered.

本發明之目的在於提供一種可提高絕緣層之導熱性、且可提高絕緣層與導電層之接著性的積層體。 An object of the present invention is to provide a laminate which can improve the thermal conductivity of the insulating layer and improve the adhesion between the insulating layer and the conductive layer.

又，本發明之目的在於提供一種功率半導體模組用零件之製造方法，其可獲得絕緣層之導熱性較高、且絕緣層與導電層之接著性較高之功率半導體模組用零件。 Moreover, an object of the present invention is to provide a method for manufacturing a component for a power semiconductor module, which can obtain a component for a power semiconductor module having a high thermal conductivity of an insulating layer and a high adhesion between an insulating layer and a conductive layer.

根據本發明之較廣之態樣，提供一種積層體，其包括：導熱體，其導熱率為10 W/m．K以上；第1絕緣層，其積層於該導熱體之表面且為半硬化物或硬化物；及第2絕緣層，其積層於該第1絕緣層之與上述導熱體側相反之表面且為未硬化物或半硬化物；上述第1絕緣層以86重量%以上且未達97重量%含有導熱率為10 W/m．K以上之無機填料，且上述第2絕緣層以67重量%以上且未達95重量%含有無機填料；上述第1絕緣層之硬化率為50%以上，上述第2絕緣層之硬化率未達80%，且上述第1絕緣層之硬化率大於上述第2絕緣層之硬化率。 According to a broader aspect of the present invention, there is provided a laminate comprising: a thermal conductor having a thermal conductivity of 10 W/m. K or more; the first insulating layer is laminated on the surface of the heat conductor and is a semi-cured material or a cured product; and the second insulating layer is laminated on a surface of the first insulating layer opposite to the heat conductor side and is An uncured or semi-hardened material; the first insulating layer has a thermal conductivity of 10 W/m in an amount of 86% by weight or more and less than 97% by weight. The inorganic filler of K or more, wherein the second insulating layer contains an inorganic filler in an amount of 67% by weight or more and less than 95% by weight; the curing rate of the first insulating layer is 50% or more, and the curing rate of the second insulating layer is less than 80%, and the curing rate of the first insulating layer is larger than the curing rate of the second insulating layer.

又，根據本發明之較廣之態樣，提供一種使用有上述積層體之功率半導體模組用零件之製造方法。 Further, according to a broader aspect of the present invention, a method of manufacturing a component for a power semiconductor module using the above laminated body is provided.

即，根據本發明之較廣之態樣，提供一種功率半導體模組用零件之製造方法，該製造方法包括如下步驟：使用如下積層體，將導電層積層於下述積層體中之下述第2絕緣層之與下述第1絕緣層側相反之表面；使下述第2絕緣層硬化，且於下述第1絕緣層為半硬化物之情形時，使下述第1絕緣層硬化；將下述導熱體、下述第1絕緣層、下述第2絕緣層及下述導電層埋入模具樹脂內；上述積層體包括：導熱體，其導熱率為10 W/m．K以上；第1絕緣層，其積層於該導熱體之表面且為半硬化物或硬化物；及第2絕緣層，其積層於該第1絕緣層之與上述導熱體側相反之表面且為未硬化物或半硬化物；並且上述第1絕緣層以86重量%以 上且未達97重量%含有導熱率為10 W/m．K以上之無機填料，且上述第2絕緣層以67重量%以上且未達95重量%含有無機填料；上述第1絕緣層之硬化率為50%以上，上述第2絕緣層之硬化率未達80%，且上述第1絕緣層之硬化率大於上述第2絕緣層之硬化率。 That is, according to a broader aspect of the present invention, there is provided a method of manufacturing a component for a power semiconductor module, the method comprising the steps of: laminating a conductive layer in a laminate below using a laminate as follows (2) a surface of the insulating layer opposite to the side of the first insulating layer; the second insulating layer is cured; and when the first insulating layer is a semi-cured material, the first insulating layer is cured; The following heat conductor, the following first insulating layer, the following second insulating layer and the following conductive layer are embedded in the mold resin; the laminated body comprises: a heat conductor having a thermal conductivity of 10 W/m. K or more; the first insulating layer is laminated on the surface of the heat conductor and is a semi-cured material or a cured product; and the second insulating layer is laminated on a surface of the first insulating layer opposite to the heat conductor side and is Unhardened or semi-hardened; and the above first insulating layer is 86% by weight Up to 97% by weight contains a thermal conductivity of 10 W/m. The inorganic filler of K or more, wherein the second insulating layer contains an inorganic filler in an amount of 67% by weight or more and less than 95% by weight; the curing rate of the first insulating layer is 50% or more, and the curing rate of the second insulating layer is less than 80%, and the curing rate of the first insulating layer is larger than the curing rate of the second insulating layer.

於本說明書中，揭示有關於上述積層體之發明、及關於上述功率半導體裝置用模組用零件之製造方法之發明兩者。 In the present specification, both the invention of the above laminated body and the invention of the method for manufacturing a module for a power semiconductor device are disclosed.

較佳為上述第1絕緣層100重量%中之上述無機填料之含量多於上述第2層100重量%中之上述無機填料之含量。較佳為本發明之積層體係用於獲得功率半導體模組用零件之積層體。較佳為於上述第1絕緣層為硬化物之情形時，作為硬化物之上述第1絕緣層之熱線膨脹率為20 ppm/℃以下，於上述第1絕緣層為半硬化物之情形時，作為硬化後之硬化物之上述第1絕緣層之熱線膨脹率為20 ppm/℃以下。 It is preferable that the content of the inorganic filler in 100% by weight of the first insulating layer is more than the content of the inorganic filler in 100% by weight of the second layer. Preferably, the laminate system of the present invention is used to obtain a laminate of parts for a power semiconductor module. When the first insulating layer is a cured product, the first insulating layer as a cured product preferably has a coefficient of thermal linear expansion of 20 ppm/° C. or less, and when the first insulating layer is a semi-cured material, The first insulating layer as the cured product after curing has a coefficient of thermal linear expansion of 20 ppm/° C. or less.

較佳為上述積層體中之作為硬化前之未硬化物或半硬化物之上述第2絕緣層於130℃下之黏度為1000 Pa．s以上且20000 Pa．s以下。 Preferably, the second insulating layer as the uncured or semi-cured material before curing in the laminate has a viscosity at 130 ° C of 1000 Pa. s above and 20000 Pa. s below.

較佳為上述第2絕緣層之厚度相對於上述第1絕緣層之厚度之比為0.3以上且1以下。 Preferably, the ratio of the thickness of the second insulating layer to the thickness of the first insulating layer is 0.3 or more and 1 or less.

較佳為上述第1絕緣層所含之上述無機填料之最大粒徑為50 μm以下，且上述第2絕緣層所含之上述無機填料之最大粒徑為50 μm以下。較佳為上述第1絕緣層所含之上述無 機填料為選自由氧化鋁、晶質二氧化矽、氮化硼及氮化鋁所組成之群中之至少一種。較佳為上述第1絕緣層所含之上述無機填料、及上述第2絕緣層所含之上述無機填料分別選自由氧化鋁、晶質二氧化矽、氮化硼及氮化鋁所組成之群中之至少一種。亦較佳為上述第1絕緣層所含之上述無機填料為選自由氧化鋁、晶質二氧化矽及氮化硼所組成之群中之至少一種。 Preferably, the inorganic filler contained in the first insulating layer has a maximum particle diameter of 50 μm or less, and the inorganic filler contained in the second insulating layer has a maximum particle diameter of 50 μm or less. Preferably, the above-mentioned none of the first insulating layer is included The machine filler is at least one selected from the group consisting of alumina, crystalline ceria, boron nitride, and aluminum nitride. Preferably, the inorganic filler contained in the first insulating layer and the inorganic filler contained in the second insulating layer are each selected from the group consisting of alumina, crystalline ceria, boron nitride, and aluminum nitride. At least one of them. It is preferable that the inorganic filler contained in the first insulating layer is at least one selected from the group consisting of alumina, crystalline ceria, and boron nitride.

較佳為上述第1絕緣層係使用具有環狀醚基之硬化性化合物與硬化劑而形成。較佳為上述第1絕緣層所使用之硬化劑係熔點為180℃以上之胺硬化劑。較佳為上述第1絕緣層所使用之上述具有環狀醚基之硬化性化合物包含具有環狀醚基及多環式芳香族骨架之硬化性化合物。較佳為上述多環式芳香族骨架為聯苯骨架。 It is preferable that the first insulating layer is formed using a curable compound having a cyclic ether group and a curing agent. Preferably, the curing agent used in the first insulating layer is an amine curing agent having a melting point of 180 ° C or higher. It is preferable that the curable compound having a cyclic ether group used in the first insulating layer contains a curable compound having a cyclic ether group and a polycyclic aromatic skeleton. Preferably, the polycyclic aromatic skeleton is a biphenyl skeleton.

較佳為上述第2絕緣層係使用具有環狀醚基之硬化性化合物與硬化劑而形成。較佳為上述第2絕緣層所使用之硬化劑係熔點為180℃以上之胺硬化劑。 It is preferable that the second insulating layer is formed using a curable compound having a cyclic ether group and a curing agent. Preferably, the curing agent used in the second insulating layer is an amine curing agent having a melting point of 180 ° C or higher.

較佳為上述導熱體之厚度為100 μm以上且1 mm以下。 Preferably, the thickness of the heat conductor is 100 μm or more and 1 mm or less.

本發明之積層體具備：導熱體，其導熱率為10 W/m．K以上；第1絕緣層，其積層於該導熱體之表面且為半硬化物或硬化物；及第2絕緣層，其積層於該第1絕緣層之與上述導熱體側相反之表面且為未硬化物或半硬化物；上述第1絕緣層以86重量%以上且未達97重量%含有導熱率為10 W/m．K以上之無機填料，且上述第2絕緣層以67重量%以上 且未達95重量%含有無機填料；上述第1絕緣層之硬化率為50%以上，上述第2絕緣層之硬化率未達80%，且上述第1絕緣層之硬化率大於上述第2絕緣層之硬化率；故而可提高絕緣層之導熱性。進而，藉由將導電層積層於上述第2絕緣層之與上述第1絕緣層側相反之表面，可提高絕緣層與導電層之接著性。 The laminate of the present invention comprises: a heat conductor having a thermal conductivity of 10 W/m. K or more; the first insulating layer is laminated on the surface of the heat conductor and is a semi-cured material or a cured product; and the second insulating layer is laminated on a surface of the first insulating layer opposite to the heat conductor side and is An uncured or semi-hardened material; the first insulating layer has a thermal conductivity of 10 W/m in an amount of 86% by weight or more and less than 97% by weight. An inorganic filler of K or more, and the second insulating layer is 67% by weight or more And less than 95% by weight of the inorganic filler; the first insulating layer has a curing rate of 50% or more, the second insulating layer has a curing rate of less than 80%, and the first insulating layer has a higher curing ratio than the second insulating layer. The hardening rate of the layer; therefore, the thermal conductivity of the insulating layer can be improved. Further, by laminating a conductive layer on the surface of the second insulating layer opposite to the first insulating layer side, the adhesion between the insulating layer and the conductive layer can be improved.

本發明之功率半導體模組用零件之製造方法包括如下步驟：使用如下積層體，將導電層積層於下述積層體中之下述第2絕緣層之與下述第1絕緣層側相反之表面；使下述第2絕緣層硬化，且於下述第1絕緣層為半硬化物之情形時，使下述第1絕緣層硬化；將下述導熱體、下述第1絕緣層、下述第2絕緣層及下述導電層埋入模具樹脂內；上述積層體包括：導熱體，其導熱率為10 W/m．K以上；第1絕緣層，其積層於該導熱體之表面且為半硬化物或硬化物；及第2絕緣層，其積層於該第1絕緣層之與上述導熱體側相反之表面且為未硬化物或半硬化物；並且上述第1絕緣層以86重量%以上且未達97重量%含有導熱率為10 W/m．K以上之無機填料，且上述第2絕緣層以67重量%以上且未達95重量%含有無機填料；上述第1絕緣層之硬化率為50%以上，上述第2絕緣層之硬化率未達80%，且上述第1絕緣層之硬化率大於上述第2絕緣層之硬化率；故而可獲得絕緣層之導熱性較高、且絕緣層與導電層之接著性較高之功率半導體模組用零件。 The method for manufacturing a component for a power semiconductor module according to the present invention includes the step of laminating a conductive layer on a surface of a second insulating layer of the following laminated body which is opposite to the side of the first insulating layer described below by using a laminated body When the first insulating layer described below is cured, and the first insulating layer is a semi-cured material, the following first insulating layer is cured; the following heat conductor, the following first insulating layer, and the following The second insulating layer and the following conductive layer are embedded in the mold resin; the laminated body comprises: a heat conductor having a thermal conductivity of 10 W/m. K or more; the first insulating layer is laminated on the surface of the heat conductor and is a semi-cured material or a cured product; and the second insulating layer is laminated on a surface of the first insulating layer opposite to the heat conductor side and is An uncured or semi-hardened material; and the first insulating layer has a thermal conductivity of 10 W/m in an amount of 86% by weight or more and less than 97% by weight. The inorganic filler of K or more, wherein the second insulating layer contains an inorganic filler in an amount of 67% by weight or more and less than 95% by weight; the curing rate of the first insulating layer is 50% or more, and the curing rate of the second insulating layer is less than 80%, and the curing rate of the first insulating layer is larger than the curing rate of the second insulating layer; therefore, a power semiconductor module having high thermal conductivity of the insulating layer and high adhesion between the insulating layer and the conductive layer can be obtained. Components.

本發明之積層體包括：導熱體，其導熱率為10 W/m．K以上；第1絕緣層，其積層於該導熱體之表面且為半硬化物或硬化物；及第2絕緣層，其積層於該第1絕緣層之與上述導熱體側相反之表面且為未硬化物或半硬化物。上述第1絕緣層以86重量%以上且未達97重量%含有導熱率為10 W/m．K以上之無機填料。上述第2絕緣層以67重量%以上且未達95重量%含有無機填料。上述第1絕緣層之硬化率為50%以上，上述第2絕緣層之硬化率未達80%，且上述第1絕緣層之硬化率大於上述第2絕緣層之硬化率。 The laminate of the present invention comprises: a thermal conductor having a thermal conductivity of 10 W/m. K or more; the first insulating layer is laminated on the surface of the heat conductor and is a semi-cured material or a cured product; and the second insulating layer is laminated on a surface of the first insulating layer opposite to the heat conductor side and is Unhardened or semi-hardened. The first insulating layer has a thermal conductivity of 10 W/m in an amount of 86% by weight or more and less than 97% by weight. An inorganic filler above K. The second insulating layer contains an inorganic filler in an amount of 67% by weight or more and less than 95% by weight. The curing rate of the first insulating layer is 50% or more, the curing rate of the second insulating layer is less than 80%, and the curing rate of the first insulating layer is larger than the curing rate of the second insulating layer.

藉由採用本發明之積層體中之上述構成，可提高絕緣層之導熱性。進而，藉由將導電層積層於上述第2絕緣層之與上述第1絕緣層側相反之表面，可提高絕緣層與導電層之接著性。 By using the above configuration in the laminate of the present invention, the thermal conductivity of the insulating layer can be improved. Further, by laminating a conductive layer on the surface of the second insulating layer opposite to the first insulating layer side, the adhesion between the insulating layer and the conductive layer can be improved.

於本發明之功率半導體模組用零件之製造方法中使用有上述積層體。本發明之功率半導體模組用零件之製造方法包括如下步驟：使用上述積層體，將導電層積層於上述積層體中之上述第2絕緣層之與上述第1絕緣層側相反之表面；使上述第2絕緣層硬化，且於上述第1絕緣層為半硬化物之情形時，使上述第1絕緣層硬化；將上述導熱體、上述第1絕緣層、上述第2絕緣層及上述導電層埋入模具樹脂內。 The above laminated body is used in the method of manufacturing a component for a power semiconductor module of the present invention. The method for manufacturing a component for a power semiconductor module according to the present invention includes the step of: depositing a conductive layer on a surface of the second insulating layer opposite to the first insulating layer side of the laminated body by using the laminated body; The second insulating layer is cured, and when the first insulating layer is a semi-cured material, the first insulating layer is cured; and the heat conductor, the first insulating layer, the second insulating layer, and the conductive layer are buried. Into the mold resin.

藉由採用本發明之功率半導體模組用零件之製造方法中之上述構成，可獲得絕緣層之導熱性較高、且絕緣層與導電層之接著性較高之功率半導體模組用零件。 According to the above configuration of the method for manufacturing a component for a power semiconductor module according to the present invention, a component for a power semiconductor module having a high thermal conductivity of the insulating layer and a high adhesion between the insulating layer and the conductive layer can be obtained.

尤其是藉由使上述第1絕緣層以86重量%以上且未達97重量%含有導熱率為10 W/m．K以上之無機填料，且使上述第2絕緣層以67重量%以上且未達95重量%含有無機填料，可較高地維持作為硬化物之第2絕緣層與導電層之接著性，並且有效地提高絕緣層整體中之導熱性。 In particular, the first insulating layer has a thermal conductivity of 10 W/m in an amount of 86% by weight or more and less than 97% by weight. In the inorganic filler of K or more, the second insulating layer contains an inorganic filler in an amount of 67% by weight or more and less than 95% by weight, and the adhesion between the second insulating layer and the conductive layer as a cured product can be maintained high, and effectively Improve the thermal conductivity of the entire insulation layer.

進而，藉由使上述第1絕緣層之硬化率為50%以上，使上述第2絕緣層之硬化率未達80%，且使上述第1絕緣層之硬化率大於上述第2絕緣層之硬化率，可較高地維持絕緣層整體中之導熱性，並且有效地提高作為硬化物之第2絕緣層與導電層之接著性。 Further, by setting the curing rate of the first insulating layer to 50% or more, the curing rate of the second insulating layer is less than 80%, and the curing rate of the first insulating layer is higher than that of the second insulating layer. The rate can maintain the thermal conductivity in the entire insulating layer as high, and effectively improve the adhesion between the second insulating layer as a cured material and the conductive layer.

上述第1絕緣層可為經硬化且可進而硬化之半硬化物，亦可為結束硬化之硬化物。上述第2絕緣層可為完全未硬化且可硬化之未硬化物，亦可為經硬化且可進而硬化之半硬化物。 The first insulating layer may be a hardened and hardenable semi-cured material, or may be a hardened material that is hardened. The second insulating layer may be an uncured material which is completely uncured and hardenable, or may be a hardened and hardenable semi-cured material.

上述積層體中之作為硬化前之半硬化物或硬化物之上述第1絕緣層之硬化率為50%以上，更佳為60%以上，進而較佳為70%以上。上述第1絕緣層之硬化率可為80%以上，可為90%以上，可為95%以上，亦可為100%。 The first insulating layer which is a semi-cured material or a cured product before curing in the laminate has a curing ratio of 50% or more, more preferably 60% or more, still more preferably 70% or more. The first insulating layer may have a curing rate of 80% or more, 90% or more, 95% or more, or 100%.

上述積層體中之作為硬化前之未硬化物或半硬化物之上述第2絕緣層之硬化率未達80%。上述第2絕緣層之硬化率較佳為1%以上，可為10%以上，亦可為20%以上。上述第2絕緣層之硬化率可未達70%，可未達60%，亦可未達50%。 The second insulating layer as the uncured or semi-cured material before curing in the laminate has a hardening rate of less than 80%. The curing rate of the second insulating layer is preferably 1% or more, may be 10% or more, or may be 20% or more. The hardening rate of the second insulating layer may be less than 70%, may be less than 60%, or may be less than 50%.

就均衡地提高絕緣層整體中之導熱性、及作為硬化物之 第2絕緣層與導電層之接著性兩者之觀點而言，上述第1絕緣層之硬化率較佳為較上述第2絕緣層之硬化率大1%以上，更佳為大5%以上，進而較佳為大10%以上。上述第1絕緣層之硬化率可較上述第2絕緣層之硬化率大20%以上，亦可大30%以上。 Uniformly improve the thermal conductivity of the entire insulating layer and as a hardened material From the viewpoint of both the adhesion between the second insulating layer and the conductive layer, the curing rate of the first insulating layer is preferably 1% or more, more preferably 5% or more, higher than the curing rate of the second insulating layer. Further preferably, it is 10% or more. The curing rate of the first insulating layer may be 20% or more larger than the curing rate of the second insulating layer, or may be 30% or more.

上述第1、第2絕緣層之硬化率可藉由測定加熱未硬化之絕緣層時之硬化發熱而求出。於測定硬化率時，例如可使用示差掃描型熱量分析(DSC，Differential Scanning Calorimetry)裝置(SII NanoTechnology公司製造之「DSC7020」)等。具體而言，上述第1、第2絕緣層之硬化率係以如下方式測定。 The curing rate of the first and second insulating layers can be determined by measuring the hardening heat when the uncured insulating layer is heated. When the hardening rate is measured, for example, a Differential Scanning Calorimetry (DSC) device ("DSC7020" manufactured by SII NanoTechnology Co., Ltd.) or the like can be used. Specifically, the curing rates of the first and second insulating layers were measured as follows.

於測定起始溫度30℃及升溫速度8℃/分鐘之條件下，將第1絕緣層或第2絕緣層升溫至180℃，並保持1小時。測定藉由該升溫使第1絕緣層或第2絕緣層硬化時產生之熱量(以下設為熱量A)。又，於厚度50 μm之脫模PET(polyethylene terephthalate，聚對苯二甲酸乙二酯)片材上，以厚度成為80 μm之方式塗佈用以形成第1絕緣層或第2絕緣層之硬化性組合物，並於23℃及0.01氣壓之常溫真空下乾燥1小時，除此以外，以與上述積層體中之第1絕緣層或第2絕緣層相同之方式，準備於未加熱之條件下乾燥之未硬化狀態之絕緣層。使用該絕緣層，以與上述熱量A之測定相同之方式，測定升溫硬化時產生之熱量(以下設為熱量B)。根據所獲得之熱量A及熱量B，藉由下述式求出上述第1、第2絕緣層之硬化率。 The temperature of the first insulating layer or the second insulating layer was raised to 180 ° C under the conditions of a measurement initial temperature of 30 ° C and a temperature increase rate of 8 ° C / min, and held for 1 hour. The amount of heat generated when the first insulating layer or the second insulating layer is cured by the temperature rise (hereinafter referred to as heat A) is measured. Further, on a release-coated PET (polyethylene terephthalate) sheet having a thickness of 50 μm, a thickness of 80 μm is applied to form a first insulating layer or a second insulating layer. The composition is prepared to be unheated in the same manner as the first insulating layer or the second insulating layer in the laminate, except that it is dried under vacuum at normal temperature of 23 ° C and 0.01 atm. A dry, uncured state of the insulating layer. Using this insulating layer, the amount of heat generated during temperature-raising hardening (hereinafter referred to as heat B) was measured in the same manner as the measurement of the above-described heat A. The curing rate of the first and second insulating layers was determined by the following equation based on the obtained heat A and heat B.

硬化率(%)=[1-(熱量A/熱量B)]×100 Hardening rate (%) = [1 - (heat A / heat B)] × 100

上述積層體中之作為硬化前之未硬化物或半硬化物之上述第2絕緣層於130℃下之黏度η較佳為1000 Pa．s以上，更佳為5000 Pa．s以上，進而較佳為6000 Pa．s以上，較佳為20000 Pa．s以下，更佳為15000 Pa．s以下。若上述黏度η為上述下限以上及上述上限以下，則於導電層之接著時第2絕緣層之厚度不易產生變化，硬化物之耐電壓性穩定化，且藉由某種程度之變形而進一步提高作為硬化物之第2絕緣層與導電層之接著性。 The viscosity η of the second insulating layer as the uncured or semi-cured material before curing in the laminate is preferably 1000 Pa at 130 ° C. Above s, more preferably 5000 Pa. s or more, and further preferably 6000 Pa. Above s, preferably 20,000 Pa. Below s, more preferably 15000 Pa. s below. When the viscosity η is not less than the above lower limit and not more than the above upper limit, the thickness of the second insulating layer is less likely to change at the time of the conductive layer, and the withstand voltage of the cured product is stabilized, and is further improved by a certain degree of deformation. The adhesion between the second insulating layer and the conductive layer as a cured product.

上述黏度η表示自23℃以升溫速度8℃/分鐘加熱作為硬化前之未硬化物或半硬化物之第2絕緣層時於130℃下之黏度。再者，將規定上述黏度η之溫度設為130℃之原因在於：較佳用於第2絕緣層與導電層之接著之溫度為130℃附近。 The viscosity η represents a viscosity at 130 ° C when the second insulating layer which is an uncured or semi-cured material before curing is heated at a heating rate of 8 ° C /min at 23 ° C. Further, the reason why the temperature of the viscosity η is set to 130 ° C is that the temperature for the second insulating layer and the conductive layer is preferably around 130 ° C.

於測定上述黏度η時，例如可使用動態黏彈性測定裝置(Reologica Instruments公司製造之「VAR-100」)等。 For measuring the viscosity η, for example, a dynamic viscoelasticity measuring device ("VAR-100" manufactured by Reologica Instruments Co., Ltd.) or the like can be used.

就進一步抑制導熱體與第1絕緣層之剝離，且進一步抑制使積層體中之絕緣層硬化後翹曲之產生之觀點而言，較佳為於上述第1絕緣層為硬化物之情形時，作為硬化物之上述第1絕緣層之熱線膨脹率為20 ppm/℃以下，於上述第1絕緣層為半硬化物之情形時，作為硬化後之硬化物之上述第1絕緣層之熱線膨脹率為20 ppm/℃以下。就進一步抑制導熱體與第1絕緣層之剝離，且進一步抑制使積層體中 之絕緣層硬化後翹曲之產生之觀點而言，作為硬化物之第1絕緣層之熱線膨脹率較佳為3 ppm/℃以上，更佳為18 ppm/℃以下。 In order to further suppress the peeling of the heat conductor and the first insulating layer, and further suppress the occurrence of warpage after curing the insulating layer in the laminated body, it is preferable that when the first insulating layer is a cured product, The thermal expansion coefficient of the first insulating layer as the cured product is 20 ppm/° C. or less, and when the first insulating layer is a semi-cured material, the thermal expansion coefficient of the first insulating layer as a cured product after curing It is below 20 ppm/°C. Further suppressing the peeling of the heat conductor and the first insulating layer, and further suppressing the layered body The coefficient of thermal linear expansion of the first insulating layer as the cured product is preferably 3 ppm/° C. or more, and more preferably 18 ppm/° C. or less, from the viewpoint of occurrence of warpage after curing of the insulating layer.

於測定上述熱線膨脹率時，例如可使用熱機械分析裝置(SII NanoTechnology公司製造之「TMA/SS7000」)等。 For measuring the above coefficient of thermal expansion, for example, a thermomechanical analyzer ("TMA/SS7000" manufactured by SII NanoTechnology Co., Ltd.) or the like can be used.

再者，於上述積層體中之上述第1絕緣層為半硬化物之情形時，用以測定熱線膨脹率之作為硬化物之上述第1絕緣層較佳為藉由使作為半硬化物之第1絕緣層於200℃下硬化1小時而獲得。 Further, in the case where the first insulating layer in the laminate is a semi-cured material, the first insulating layer as a cured material for measuring a coefficient of thermal expansion is preferably made of a semi-cured material. 1 The insulating layer was obtained by hardening at 200 ° C for 1 hour.

上述第2絕緣層之厚度相對於上述第1絕緣層之厚度之比(第2絕緣層之厚度/第1絕緣層之厚度)較佳為0.03以上，更佳為0.1以上，進而較佳為0.3以上，較佳為10以下，更佳為3以下，進而較佳為1以下。 The ratio of the thickness of the second insulating layer to the thickness of the first insulating layer (the thickness of the second insulating layer / the thickness of the first insulating layer) is preferably 0.03 or more, more preferably 0.1 or more, still more preferably 0.3. The above is preferably 10 or less, more preferably 3 or less, still more preferably 1 or less.

就均衡地提高絕緣層整體中之導熱性、及作為硬化物之第2絕緣層與導電層之接著性兩者之觀點而言，上述第2絕緣層之厚度相對於上述第1絕緣層之厚度之比尤佳為0.3以上且1以下。 The thickness of the second insulating layer is relative to the thickness of the first insulating layer from the viewpoint of uniformly improving the thermal conductivity in the entire insulating layer and the adhesion between the second insulating layer and the conductive layer as the cured product. The ratio is preferably 0.3 or more and 1 or less.

第1、第2絕緣層之合計之厚度並無特別限定。第1、第2絕緣層之合計之厚度較佳為80 μm以上，更佳為100 μm以上，較佳為200 μm以下，更佳為170 μm以下。若第1、第2絕緣層之合計之厚度為上述下限以上，則絕緣層整體中之散熱性、作為硬化物之第2絕緣層與導電層之接著性及絕緣層整體中之耐電壓性均衡地提高。 The total thickness of the first and second insulating layers is not particularly limited. The total thickness of the first and second insulating layers is preferably 80 μm or more, more preferably 100 μm or more, more preferably 200 μm or less, and still more preferably 170 μm or less. When the total thickness of the first and second insulating layers is not less than the above lower limit, the heat dissipation property of the entire insulating layer, the adhesion between the second insulating layer and the conductive layer as a cured material, and the withstand voltage balance in the entire insulating layer are balanced. Improve the ground.

上述第1絕緣層較佳為使用硬化性化合物(A)與硬化劑 (B)而形成。上述第1絕緣層較佳為使用含有硬化性化合物(A)與硬化劑(B)之第1硬化性組合物而形成。就形成硬化性良好之第1絕緣層之觀點而言，第1絕緣層較佳為使用具有環狀醚基之硬化性化合物(A1)與硬化劑(B)而形成。第1絕緣層含有無機填料(C)。第1硬化性組合物較佳為含有無機填料(C)。第1絕緣層及第1硬化性組合物所含之無機填料(C)為導熱率為10 W/m．K以上之無機填料。 The first insulating layer is preferably a curable compound (A) and a hardener. Formed by (B). The first insulating layer is preferably formed using a first curable composition containing a curable compound (A) and a curing agent (B). From the viewpoint of forming the first insulating layer having good curability, the first insulating layer is preferably formed using a curable compound (A1) having a cyclic ether group and a curing agent (B). The first insulating layer contains an inorganic filler (C). The first curable composition preferably contains an inorganic filler (C). The inorganic filler (C) contained in the first insulating layer and the first curable composition has a thermal conductivity of 10 W/m. An inorganic filler above K.

上述第2絕緣層較佳為使用硬化性化合物(A)與硬化劑(B)而形成。上述第2絕緣層較佳為使用含有硬化性化合物(A)與硬化劑(B)之第2硬化性組合物而形成。就形成硬化性良好之第2絕緣層之觀點而言，第2絕緣層較佳為使用具有環狀醚基之硬化性化合物(A1)與硬化劑(B)而形成。第2絕緣層含有無機填料(C)。因此，第2硬化性組合物較佳為含有無機填料(C)。第2絕緣層及第2硬化性組合物所含之無機填料(C)可為導熱率為10 W/m．K以上之無機填料，亦可為導熱率未達10 W/m．K之無機填料。就進一步提高絕緣層整體之導熱率之觀點而言，上述第2絕緣層及上述第2硬化性組合物所含之無機填料(C)之導熱率較佳為10 W/m．K以上。 The second insulating layer is preferably formed using a curable compound (A) and a curing agent (B). The second insulating layer is preferably formed using a second curable composition containing a curable compound (A) and a curing agent (B). From the viewpoint of forming the second insulating layer having good curability, the second insulating layer is preferably formed using a curable compound (A1) having a cyclic ether group and a curing agent (B). The second insulating layer contains an inorganic filler (C). Therefore, the second curable composition preferably contains an inorganic filler (C). The inorganic filler (C) contained in the second insulating layer and the second curable composition may have a thermal conductivity of 10 W/m. The inorganic filler above K may also have a thermal conductivity of less than 10 W/m. K inorganic filler. The thermal conductivity of the inorganic filler (C) contained in the second insulating layer and the second curable composition is preferably 10 W/m from the viewpoint of further increasing the thermal conductivity of the entire insulating layer. K or more.

以下，首先說明本發明之第1、第2絕緣層所使用之各成分之詳細情況。 Hereinafter, the details of each component used in the first and second insulating layers of the present invention will be described first.

(硬化性化合物(A)) (hardening compound (A))

上述第1、第2絕緣層較佳為分別使用硬化性化合物(A)而形成。上述第1、第2硬化性組合物分別含有硬化性化合 物(A)。硬化性化合物(A)較佳為熱硬化性化合物。硬化性化合物(A)較佳為具有環狀醚基之硬化性化合物(A1)。作為該環狀醚基，可列舉環氧基及氧雜環丁基等。具有環狀醚基之硬化性化合物(A1)較佳為具有環氧基或氧雜環丁基之硬化性化合物。硬化性化合物(A)藉由硬化劑(B)之作用而硬化。第1、第2絕緣層中各自使用之硬化性化合物(A)可僅使用一種，亦可併用兩種以上。第1絕緣層所使用之硬化性化合物(A)與第2絕緣層所使用之硬化性化合物(A)可相同亦可不同。 It is preferable that the first and second insulating layers are each formed using a curable compound (A). The first and second curable compositions each contain a curable compound (A). The curable compound (A) is preferably a thermosetting compound. The curable compound (A) is preferably a curable compound (A1) having a cyclic ether group. Examples of the cyclic ether group include an epoxy group and an oxetanyl group. The curable compound (A1) having a cyclic ether group is preferably a curable compound having an epoxy group or an oxetanyl group. The curable compound (A) is hardened by the action of the hardener (B). The curable compound (A) used in each of the first and second insulating layers may be used singly or in combination of two or more kinds. The curable compound (A) used in the first insulating layer may be the same as or different from the curable compound (A) used in the second insulating layer.

硬化性化合物(A1)可含有具有環氧基之環氧化合物(A1a)，亦可含有具有氧雜環丁基之氧雜環丁烷化合物(A1b)。 The curable compound (A1) may contain an epoxy compound (A1a) having an epoxy group, and may also contain an oxetane compound (A1b) having an oxetanyl group.

就進一步提高作為硬化物之絕緣層(以下有時僅記載為硬化物)之耐熱性及耐電壓性之觀點而言，硬化性化合物(A)較佳為具有芳香族骨架。就進一步提高硬化物之導熱性及耐電壓性之觀點而言，上述第1絕緣層所使用之硬化性化合物(A)較佳為包含具有多環式芳香族骨架之硬化性化合物，更佳為包含具有環狀醚基及多環式芳香族骨架之硬化性化合物。作為多環式芳香族骨架，可列舉：萘骨架、蒽骨架、骨架、茀骨架及聯苯骨架等。就進一步提高硬化物之導熱性及耐電壓性之觀點而言，上述多環式芳香族骨架較佳為聯苯骨架。 The curable compound (A) preferably has an aromatic skeleton from the viewpoint of further improving the heat resistance and voltage resistance of the insulating layer (hereinafter sometimes referred to as a cured product) as a cured product. From the viewpoint of further improving the thermal conductivity and the withstand voltage of the cured product, the curable compound (A) used in the first insulating layer preferably contains a curable compound having a polycyclic aromatic skeleton, and more preferably A curable compound having a cyclic ether group and a polycyclic aromatic skeleton is contained. Examples of the polycyclic aromatic skeleton include a naphthalene skeleton and an anthracene skeleton. Skeleton, anthracene skeleton and biphenyl skeleton. The polycyclic aromatic skeleton is preferably a biphenyl skeleton from the viewpoint of further improving the thermal conductivity and voltage resistance of the cured product.

硬化性化合物(A)之合計100重量%中，具有多環式芳香族骨架之硬化性化合物之含量較佳為30重量%以上，更佳 為50重量%以上，進而較佳為60重量%以上。亦可使硬化性化合物(A)之全部為具有多環式芳香族骨架之硬化性化合物。 In 100% by weight of the total of the curable compound (A), the content of the curable compound having a polycyclic aromatic skeleton is preferably 30% by weight or more, more preferably It is 50% by weight or more, and more preferably 60% by weight or more. Further, all of the curable compound (A) may be a curable compound having a polycyclic aromatic skeleton.

作為具有環氧基之環氧化合物(A1a)之具體例，可列舉：具有雙酚骨架之環氧單體、具有二環戊二烯骨架之環氧單體、具有萘骨架之環氧單體、具有金剛烷骨架之環氧單體、具有茀骨架之環氧單體、具有聯苯骨架之環氧單體、具有雙(縮水甘油氧基苯基)甲烷骨架之環氧單體、具有骨架之環氧單體、具有蒽骨架之環氧單體、及具有芘骨架之環氧單體等。亦可使用該等之氫化物或改性物。環氧化合物(A1a)可僅使用一種，亦可併用兩種以上。 Specific examples of the epoxy compound (A1a) having an epoxy group include an epoxy monomer having a bisphenol skeleton, an epoxy monomer having a dicyclopentadiene skeleton, and an epoxy monomer having a naphthalene skeleton. An epoxy monomer having an adamantane skeleton, an epoxy monomer having an anthracene skeleton, an epoxy monomer having a biphenyl skeleton, an epoxy monomer having a bis(glycidoxyphenyl)methane skeleton, having An epoxy monomer of a skeleton, an epoxy monomer having an anthracene skeleton, and an epoxy monomer having an anthracene skeleton. These hydrides or modifications can also be used. The epoxy compound (A1a) may be used alone or in combination of two or more.

作為上述具有雙酚骨架之環氧單體，例如可列舉：雙酚A型、雙酚F型或雙酚S型之具有雙酚骨架之環氧單體等。 Examples of the epoxy monomer having a bisphenol skeleton include an epoxy monomer having a bisphenol skeleton, a bisphenol A type, a bisphenol F type, and a bisphenol S type.

作為上述具有二環戊二烯骨架之環氧單體，可列舉：二氧化二環戊二烯、及具有二環戊二烯骨架之苯酚酚醛清漆環氧單體等。 Examples of the epoxy monomer having a dicyclopentadiene skeleton include dicyclopentadiene dioxide and a phenol novolak epoxy monomer having a dicyclopentadiene skeleton.

作為上述具有萘骨架之環氧單體，可列舉：1-縮水甘油基萘、2-縮水甘油基萘、1,2-二縮水甘油基萘、1,5-二縮水甘油基萘、1,6-二縮水甘油基萘、1,7-二縮水甘油基萘、2,7-二縮水甘油基萘、三縮水甘油基萘、及1,2,5,6-四縮水甘油基萘等。 Examples of the epoxy monomer having a naphthalene skeleton include 1-glycidylnaphthalene, 2-glycidylnaphthalene, 1,2-diglycidylnaphthalene, 1,5-diglycidylnaphthalene, and 1, 6-diglycidylnaphthalene, 1,7-diglycidylnaphthalene, 2,7-diglycidylnaphthalene, triglycidylnaphthalene, and 1,2,5,6-tetraglycidylnaphthalene, and the like.

作為上述具有金剛烷骨架之環氧單體，可列舉：1,3-雙(4-縮水甘油氧基苯基)金剛烷、及2,2-雙(4-縮水甘油氧基苯基)金剛烷等。 Examples of the epoxy monomer having an adamantane skeleton include 1,3-bis(4-glycidoxyphenyl)adamantane and 2,2-bis(4-glycidoxyphenyl)aluminum. Alkane, etc.

作為上述具有茀骨架之環氧單體，可列舉：9,9-雙(4-縮水甘油氧基苯基)茀、9,9-雙(4-縮水甘油氧基-3-甲基苯基)茀、9,9-雙(4-縮水甘油氧基-3-氯苯基)茀、9,9-雙(4-縮水甘油氧基-3-溴苯基)茀、9,9-雙(4-縮水甘油氧基-3-氟苯基)茀、9,9-雙(4-縮水甘油氧基-3-甲氧基苯基)茀、9,9-雙(4-縮水甘油氧基-3,5-二甲基苯基)茀、9,9-雙(4-縮水甘油氧基-3,5-二氯苯基)茀、及9,9-雙(4-縮水甘油氧基-3,5-二溴苯基)茀等。 Examples of the epoxy monomer having an anthracene skeleton include 9,9-bis(4-glycidoxyphenyl)fluorene, 9,9-bis(4-glycidoxy-3-methylphenyl). ), 9,9-bis(4-glycidoxy-3-chlorophenyl)anthracene, 9,9-bis(4-glycidoxy-3-bromophenyl)anthracene, 9,9-double (4-glycidoxy-3-fluorophenyl)anthracene, 9,9-bis(4-glycidoxy-3-methoxyphenyl)anthracene, 9,9-bis(4-glycidyloxygen) 3-,5-dimethylphenyl)anthracene, 9,9-bis(4-glycidoxy-3,5-dichlorophenyl)anthracene, and 9,9-bis(4-glycidyloxy) Base-3,5-dibromophenyl)anthracene and the like.

作為上述具有聯苯骨架之環氧單體，可列舉：4,4'-二縮水甘油基聯苯、及4,4'-二縮水甘油基-3,3',5,5'-四甲基聯苯等。 Examples of the epoxy monomer having a biphenyl skeleton include 4,4'-diglycidylbiphenyl, and 4,4'-diglycidyl-3,3',5,5'-tetramethyl. Base benzene and the like.

作為上述具有雙(縮水甘油氧基苯基)甲烷骨架之環氧單體，可列舉：1,1'-雙(2,7-縮水甘油氧基萘基)甲烷、1,8'-雙(2,7-縮水甘油氧基萘基)甲烷、1,1'-雙(3,7-縮水甘油氧基萘基)甲烷、1,8'-雙(3,7-縮水甘油氧基萘基)甲烷、1,1'-雙(3,5-縮水甘油氧基萘基)甲烷、1,8'-雙(3,5-縮水甘油氧基萘基)甲烷、1,2'-雙(2,7-縮水甘油氧基萘基)甲烷、1,2'-雙(3,7-縮水甘油氧基萘基)甲烷、及1,2'-雙(3,5-縮水甘油氧基萘基)甲烷等。 Examples of the epoxy monomer having a bis(glycidoxyphenyl)methane skeleton include 1,1'-bis(2,7-glycidoxynaphthyl)methane and 1,8'-bis ( 2,7-glycidoxynaphthyl)methane, 1,1'-bis(3,7-glycidoxynaphthyl)methane, 1,8'-bis(3,7-glycidoxynaphthyl) Methane, 1,1'-bis(3,5-glycidoxynaphthyl)methane, 1,8'-bis(3,5-glycidoxynaphthyl)methane, 1,2'-bis ( 2,7-glycidoxynaphthyl)methane, 1,2'-bis(3,7-glycidoxynaphthyl)methane, and 1,2'-bis(3,5-glycidoxynaphthalene) Base) methane, etc.

作為上述具有骨架之環氧單體，可列舉1,3,4,5,6,8-六甲基-2,7-雙-環氧乙基甲氧基-9-苯基-9H-等。 As described above The epoxy monomer of the skeleton may, for example, be 1,3,4,5,6,8-hexamethyl-2,7-bis-epoxyethylmethoxy-9-phenyl-9H- Wait.

作為具有氧雜環丁基之氧雜環丁烷化合物(A1b)之具體例，例如可列舉：4,4'-雙[(3-乙基-3-氧雜環丁基)甲氧基甲基]聯苯、1,4-苯二甲酸雙[(3-乙基-3-氧雜環丁基)甲基] 酯、1,4-雙[(3-乙基-3-氧雜環丁基)甲氧基甲基]苯、及氧雜環丁烷改性苯酚酚醛清漆等。氧雜環丁烷化合物(A1b)可僅使用一種，亦可併用兩種以上。 Specific examples of the oxetane compound (A1b) having an oxetanyl group include, for example, 4,4'-bis[(3-ethyl-3-oxetanyl)methoxymethyl. Biphenyl, 1,4-phthalic acid bis[(3-ethyl-3-oxetanyl)methyl] Ester, 1,4-bis[(3-ethyl-3-oxetanyl)methoxymethyl]benzene, and oxetane modified phenol novolac. The oxetane compound (A1b) may be used alone or in combination of two or more.

就進一步改善作為硬化物之絕緣層之耐熱性之觀點而言，硬化性化合物(A)較佳為具有兩個以上環狀醚基。 The curable compound (A) preferably has two or more cyclic ether groups from the viewpoint of further improving the heat resistance of the insulating layer as a cured product.

就進一步改善硬化物之耐熱性之觀點而言，硬化性化合物(A)之合計1.00重量%中，具有兩個以上環狀醚基之硬化性化合物之含量較佳為70重量%以上，更佳為80重量%以上且100重量%以下。硬化性化合物(A)之合計100重量%中，具有兩個以上環狀醚基之硬化性化合物之含量可為10重量%以上且100重量%以下。又，亦可使硬化性化合物(A)之全部為具有兩個以上環狀醚基之硬化性化合物。 In the case of further improving the heat resistance of the cured product, the content of the curable compound having two or more cyclic ether groups is preferably 70% by weight or more, more preferably 1.00% by weight based on the total amount of the curable compound (A). It is 80% by weight or more and 100% by weight or less. In 100% by weight of the total of the curable compound (A), the content of the curable compound having two or more cyclic ether groups may be 10% by weight or more and 100% by weight or less. Further, all of the curable compound (A) may be a curable compound having two or more cyclic ether groups.

硬化性化合物(A)之分子量較佳為未達10000。硬化性化合物(A)之分子量較佳為200以上，更佳為1200以下，進而較佳為600以下，尤佳為550以下。若硬化性化合物(A)之分子量為上述下限以上，則絕緣層之表面之黏著性降低，積層體之操作性進一步提高。若硬化性化合物(A)之分子量為上述上限以下，則硬化物之接著性進一步提高。進而，硬化物不易變硬且變脆，硬化物之接著性進一步提高。 The molecular weight of the curable compound (A) is preferably less than 10,000. The molecular weight of the curable compound (A) is preferably 200 or more, more preferably 1200 or less, still more preferably 600 or less, and still more preferably 550 or less. When the molecular weight of the curable compound (A) is at least the above lower limit, the adhesion of the surface of the insulating layer is lowered, and the workability of the laminated body is further improved. When the molecular weight of the curable compound (A) is at most the above upper limit, the adhesion of the cured product is further improved. Further, the cured product is less likely to be hard and brittle, and the adhesion of the cured product is further improved.

再者，於本說明書中，所謂硬化性化合物(A)中之分子量，於不為聚合物之情形時，及於可確定結構式之情形時，意指可根據該結構式算出之分子量，於為聚合物之情形時，意指重量平均分子量。 In the present specification, the molecular weight in the curable compound (A), when it is not a polymer, and when the structural formula can be determined, means a molecular weight which can be calculated from the structural formula. In the case of a polymer, it means a weight average molecular weight.

第1硬化性組合物所含之總樹脂成分(以下有時簡稱為總樹脂成分X1)之合計100重量%中，硬化性化合物(A)之含量較佳為50重量%以上，更佳為60重量%以上，較佳為99.5重量%以下，更佳為99重量%以下，進而較佳為98重量%以下。若硬化性化合物(A)之含量為上述下限以上，則硬化物之接著性及耐熱性進一步提高。若硬化性化合物(A)之含量為上述上限以下，則第1硬化性組合物之塗佈性進一步提高。再者，所謂總樹脂成分X1，係指硬化性化合物(A)、硬化劑(B)及視需要添加之其他樹脂成分之總和。於總樹脂成分X1中不含無機填料(C)。 The content of the curable compound (A) is preferably 50% by weight or more, and more preferably 60% by weight based on 100% by weight of the total of the total resin component (hereinafter sometimes referred to simply as the total resin component X1) contained in the first curable composition. The weight% or more is preferably 99.5% by weight or less, more preferably 99% by weight or less, still more preferably 98% by weight or less. When the content of the curable compound (A) is at least the above lower limit, the adhesion and heat resistance of the cured product are further improved. When the content of the curable compound (A) is at most the above upper limit, the coatability of the first curable composition is further improved. In addition, the total resin component X1 is the sum total of the curable compound (A), the hardener (B), and other resin components added as needed. The inorganic filler (C) is not contained in the total resin component X1.

第2硬化性組合物所含之總樹脂成分(以下有時簡稱為總樹脂成分X2)之合計100重量%中，硬化性化合物(A)之含量較佳為50重量%以上，更佳為60重量%以上，較佳為99.5重量%以下，更佳為99重量%以下，進而較佳為98重量%以下。若硬化性化合物(A)之含量為上述下限以上，則硬化物之接著性及耐熱性進一步提高。若硬化性化合物(A)之含量為上述上限以下，則第2硬化性組合物之塗佈性進一步提高。再者，所謂總樹脂成分X2，係指硬化性化合物(A)、硬化劑(B)及視需要添加之其他樹脂成分之總和。於總樹脂成分X2中不含無機填料(C)。所謂上述樹脂成分，係指不揮發成分，且於成形、或硬化性組合物或者絕緣層之加熱時不揮發之成分。換言之，上述樹脂成分為固形物成分，所謂該固形物成分，係指不揮發性成分，且於成形、或者化性組合物或硬絕緣層之加熱時不揮發之成分。 The content of the curable compound (A) is preferably 50% by weight or more, and more preferably 60% by weight based on 100% by weight of the total resin component (hereinafter sometimes referred to simply as the total resin component X2) in the second curable composition. The weight% or more is preferably 99.5% by weight or less, more preferably 99% by weight or less, still more preferably 98% by weight or less. When the content of the curable compound (A) is at least the above lower limit, the adhesion and heat resistance of the cured product are further improved. When the content of the curable compound (A) is at most the above upper limit, the coatability of the second curable composition is further improved. In addition, the total resin component X2 is the sum total of the curable compound (A), the hardener (B), and other resin components added as needed. The inorganic filler (C) is not contained in the total resin component X2. The resin component is a component which does not volatilize and which does not volatilize when it is formed, or when the curable composition or the insulating layer is heated. In other words, the resin component is a solid component, and the solid component refers to a component which is a nonvolatile component and which does not volatilize when heated by a molding or a chemical composition or a hard insulating layer.

(硬化劑(B)) (hardener (B))

上述第1、第2絕緣層較佳為分別使用硬化劑(B)而形成。上述第1、第2硬化性組合物分別含有硬化劑(B)。硬化劑(B)只要可使第1、第2硬化性組合物硬化，則並無特別限定。硬化劑(B)較佳為熱硬化劑。第1、第2絕緣層中各自使用之硬化劑(B)可僅使用一種，亦可併用兩種以上。第1絕緣層所使用之硬化劑(B)與第2絕緣層所使用之硬化劑(B)可相同亦可不同。 It is preferable that the first and second insulating layers are formed using a curing agent (B). Each of the first and second curable compositions contains a curing agent (B). The curing agent (B) is not particularly limited as long as it can cure the first and second curable compositions. The hardener (B) is preferably a heat hardener. The curing agent (B) used in each of the first and second insulating layers may be used alone or in combination of two or more. The curing agent (B) used in the first insulating layer may be the same as or different from the curing agent (B) used in the second insulating layer.

就進一步提高硬化物之耐熱性之觀點而言，硬化劑(B)較佳為具有芳香族骨架或脂環式骨架。硬化劑(B)較佳為含有胺硬化劑(胺化合物)、咪唑硬化劑、酚硬化劑(酚化合物)或酸酐硬化劑(酸酐)，更佳為含有胺硬化劑。上述酸酐硬化劑較佳為含有具有芳香族骨架之酸酐、該酸酐之氫化物或者該酸酐之改性物，或含有具有脂環式骨架之酸酐、該酸酐之氫化物或者該酸酐之改性物。 The curing agent (B) preferably has an aromatic skeleton or an alicyclic skeleton from the viewpoint of further improving the heat resistance of the cured product. The hardener (B) preferably contains an amine hardener (amine compound), an imidazole hardener, a phenol hardener (phenol compound) or an acid anhydride hardener (anhydride), and more preferably contains an amine hardener. The acid anhydride hardening agent preferably contains an acid anhydride having an aromatic skeleton, a hydrogenated product of the acid anhydride or a modified product of the acid anhydride, or an acid anhydride having an alicyclic skeleton, a hydrogenated product of the acid anhydride or a modified product of the acid anhydride. .

就改善無機填料(C)之分散性、進而進一步提高硬化物之絕緣破壞電壓(耐電壓性)及導熱性之觀點而言，硬化劑(B)較佳為含有鹼性之硬化劑。又，就進一步改善無機填料(C)之分散性、進而進一步提高硬化物之絕緣破壞電壓(耐電壓性)及導熱性之觀點而言，硬化劑(B)更佳為含有胺硬化劑或咪唑硬化劑，更佳為含有胺硬化劑，尤佳為含有雙氰胺。又，亦較佳為硬化劑(B)含有雙氰胺與咪唑硬化劑兩者。藉由使用該等較佳之硬化劑，可獲得無機填料(C)於第1、第2硬化性組合物中之分散性提高，進而耐熱 性、耐濕性及電物性之平衡優異之硬化物。其結果，即便無機填料(C)之含量較多，導熱性亦變得相當高。尤其是於使用雙氰胺之情形時，硬化物與導熱體及導電層之接著性變得相當高。 The curing agent (B) is preferably a hardening agent containing an alkali, from the viewpoint of improving the dispersibility of the inorganic filler (C) and further improving the dielectric breakdown voltage (voltage resistance) and thermal conductivity of the cured product. Further, the curing agent (B) is more preferably an amine hardener or an imidazole from the viewpoint of further improving the dispersibility of the inorganic filler (C) and further improving the dielectric breakdown voltage (voltage resistance) and thermal conductivity of the cured product. The hardener, more preferably contains an amine hardener, and particularly preferably contains dicyandiamide. Further, it is also preferred that the curing agent (B) contains both dicyandiamide and an imidazole curing agent. By using these preferred hardeners, the dispersibility of the inorganic filler (C) in the first and second curable compositions can be improved, and heat resistance can be obtained. A hardened material with excellent balance of moisture, moisture resistance and electrical properties. As a result, even if the content of the inorganic filler (C) is large, the thermal conductivity becomes relatively high. Especially in the case of using dicyandiamide, the adhesion of the cured product to the heat conductor and the conductive layer becomes quite high.

作為上述胺硬化劑，可列舉：雙氰胺、咪唑化合物及二胺基二苯基甲烷及二胺基二苯基碸等。就進一步提高硬化物與導熱體及導電層之接著性之觀點而言，上述胺硬化劑進一步較佳為含有雙氰胺或咪唑化合物。就進一步提高硬化前之絕緣層之儲存穩定性之觀點而言，上述硬化劑(B)較佳為含有熔點為180℃以上之硬化劑，更佳為含有熔點為180℃以上之胺硬化劑。 Examples of the amine curing agent include dicyandiamide, an imidazole compound, diaminodiphenylmethane, and diaminodiphenylphosphonium. The amine hardener further preferably contains a dicyandiamide or an imidazole compound from the viewpoint of further improving the adhesion between the cured product and the heat conductor and the conductive layer. The curing agent (B) preferably contains a curing agent having a melting point of 180 ° C or higher, and more preferably an amine curing agent having a melting point of 180 ° C or higher, from the viewpoint of further improving the storage stability of the insulating layer before curing.

作為上述咪唑硬化劑，可列舉：2-十一烷基咪唑、2-十七烷基咪唑、2-甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1,2-二甲基咪唑、1-氰基乙基-2-甲基咪唑、1-氰基乙基-2-乙基-4-甲基咪唑、1-氰基乙基-2-十一烷基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-十一烷基咪唑鎓偏苯三酸鹽、1-氰基乙基-2-苯基咪唑鎓偏苯三酸鹽、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三、2,4-二胺基-6-[2'-十一烷基咪唑基-(1')]-乙基-均三、2,4-二胺基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙基-均三、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三異氰尿酸加成物、2-苯基咪唑異氰尿酸加成物、2-甲基咪唑異氰尿酸加成物、2-苯基-4,5-二羥基甲基咪唑及2-苯基-4-甲基-5-二羥基 甲基咪唑等。 Examples of the imidazole hardener include 2-undecylimidazole, 2-heptadecylimidazole, 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, and 2- Phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1,2-dimethylimidazole, 1-cyanoethyl-2-methyl Imidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1 - cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[ 2'-methylimidazolyl-(1')]-ethyl-all three 2,4-Diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-all three 2,4-Diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-all three 2,4-Diamino-6-[2'-methylimidazolyl-(1')]-ethyl-all three Isocyanuric acid adduct, 2-phenylimidazolium isocyanurate adduct, 2-methylimidazoisocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl 4-methyl-5-dihydroxymethylimidazole and the like.

作為上述酚系硬化劑，可列舉：苯酚酚醛清漆、鄰甲酚酚醛清漆、對甲酚酚醛清漆、第三丁基苯酚酚醛清漆、二環戊二烯甲酚、聚對乙烯基苯酚、雙酚A型酚醛清漆、二甲苯改性酚醛清漆、十氫萘改性酚醛清漆、聚(二-鄰羥基苯基)甲烷、聚(二-間羥基苯基)甲烷、及聚(二-對羥基苯基)甲烷等。就進一步提高硬化物之柔軟性及硬化物之阻燃性之觀點而言，較佳為具有三聚氰胺骨架之酚樹脂、具有三骨架之酚樹脂、或具有烯丙基之酚樹脂。 Examples of the phenol-based curing agent include phenol novolak, o-cresol novolac, p-cresol novolac, t-butylphenol novolac, dicyclopentadiene cresol, poly-p-vinylphenol, and bisphenol. Type A novolak, xylene modified novolac, decalin modified novolac, poly(di-o-hydroxyphenyl)methane, poly(di-m-hydroxyphenyl)methane, and poly(di-p-hydroxybenzene) Base) methane, etc. From the viewpoint of further improving the softness of the cured product and the flame retardancy of the cured product, it is preferably a phenol resin having a melamine skeleton and having three A phenolic resin of a skeleton or a phenol resin having an allyl group.

作為上述酚硬化劑之市售品，可列舉：MEH-8005、MEH-8010及MEH-8015(以上均為明和化成公司製造)、YLH903(三菱化學公司製造)、LA-7052、LA-7054、LA-7751、LA-1356及LA-3018-50P(以上均為DIC公司製造)、以及PS6313及PS6492(以上均為群榮化學公司製造)等。 As a commercial item of the above-mentioned phenol hardening agent, MEH-8005, MEH-8010, and MEH-8015 (The above are all manufactured by Minghe Chemical Co., Ltd.), YLH903 (made by Mitsubishi Chemical Corporation), LA-7052, LA-7054, LA-7751, LA-1356, and LA-3018-50P (all of which are manufactured by DIC Corporation), and PS6313 and PS6492 (all of which are manufactured by Qunrong Chemical Co., Ltd.).

作為上述具有芳香族骨架之酸酐、該酸酐之氫化物或該酸酐之改性物，例如可列舉：苯乙烯-順丁烯二酸酐共聚物、二苯甲酮四甲酸二酐、均苯四甲酸二酐、偏苯三甲酸酐、4,4'-氧基二鄰苯二甲酸酐、苯基乙炔基鄰苯二甲酸酐、甘油雙(脫水偏苯三酸酯)單乙酸酯、乙二醇雙(脫水偏苯三酸酯)、甲基四氫鄰苯二甲酸酐、甲基六氫鄰苯二甲酸酐、及三烷基四氫鄰苯二甲酸酐等。 Examples of the acid anhydride having an aromatic skeleton, the hydrogenated product of the acid anhydride, or the modified product of the acid anhydride include styrene-maleic anhydride copolymer, benzophenonetetracarboxylic dianhydride, and pyromellitic acid. Dihydride, trimellitic anhydride, 4,4'-oxydiphthalic anhydride, phenylethynylphthalic anhydride, glycerol bis(hydrogen trimellitate) monoacetate, ethylene glycol Bis(hydrogen trimellitate), methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, and trialkyltetrahydrophthalic anhydride.

作為上述具有芳香族骨架之酸酐、該酸酐之氫化物或該酸酐之改性物之市售品，可列舉：SMA Resin EF30、SMA Resin EF40、SMA Resin EF60及SMA Resin EF80(以上均為 Sartomer Japan公司製造)、ODPA-M及PEPA(以上均為Manac公司製造)、Rikacid MTA-10、Rikacid MTA-15、Rikacid TMTA、Rikacid TMEG-100、Rikacid TMEG-200、Rikacid TMEG-300、Rikacid TMEG-500、Rikacid TMEG-S、Rikacid TH、Rikacid HT-1A、Rikacid HH、Rikacid MH-700、Rikacid MT-500、Rikacid DSDA及Rikacid TDA-100(以上均為新日本理化公司製造)、以及EPICLON B4400、EPICLON B650、及EPICLON B570(以上均為DIC公司製造)等。 Examples of the commercially available product of the above-described aromatic skeleton-containing acid anhydride, the acid anhydride hydride or the acid anhydride modified product include SMA Resin EF30, SMA Resin EF40, SMA Resin EF60, and SMA Resin EF80 (all of which are Sartomer Japan, ODPA-M and PEPA (all manufactured by Manac), Rikacid MTA-10, Rikacid MTA-15, Rikacid TMTA, Rikacid TMEG-100, Rikacid TMEG-200, Rikacid TMEG-300, Rikacid TMEG -500, Rikacid TMEG-S, Rikacid TH, Rikacid HT-1A, Rikacid HH, Rikacid MH-700, Rikacid MT-500, Rikacid DSDA and Rikacid TDA-100 (all manufactured by Nippon Chemical and Chemical Co., Ltd.), and EPICLON B4400 , EPICLON B650, and EPICLON B570 (all of which are manufactured by DIC).

上述具有脂環式骨架之酸酐、該酸酐之氫化物或該酸酐之改性物較佳為具有多脂環式骨架之酸酐、該酸酐之氫化物或該酸酐之改性物，或者藉由萜烯系化合物與順丁烯二酸酐之加成反應而獲得之具有脂環式骨架之酸酐、該酸酐之氫化物或該酸酐之改性物。藉由使用該等硬化劑，硬化物之柔軟性、以及硬化物之耐濕性及接著性進一步提高。 The above-mentioned acid anhydride having an alicyclic skeleton, a hydrogenated product of the acid anhydride or a modified product of the acid anhydride is preferably an acid anhydride having a polycyclic ring skeleton, a hydrogenated product of the acid anhydride or a modified product of the acid anhydride, or by hydrazine An acid anhydride having an alicyclic skeleton, a hydrogenated product of the acid anhydride or a modified product of the acid anhydride obtained by an addition reaction of an olefinic compound and maleic anhydride. By using these hardeners, the softness of the cured product and the moisture resistance and adhesion of the cured product are further improved.

作為上述具有脂環式骨架之酸酐、該酸酐之氫化物或該酸酐之改性物，亦可列舉：甲基耐地酸酐、具有二環戊二烯骨架之酸酐或該酸酐之改性物等。 Examples of the acid anhydride having an alicyclic skeleton, a hydrogenated product of the acid anhydride, or a modified product of the acid anhydride include methylic acid anhydride, an acid anhydride having a dicyclopentadiene skeleton, or a modified product of the acid anhydride. .

作為上述具有脂環式骨架之酸酐、該酸酐之氫化物或該酸酐之改性物之市售品，可列舉：Rikacid HNA及Rikacid HNA-100(以上均為新日本理化公司製造)、以及EPICURE YH306、EPICURE YH307、EPICURE YH308H及EPICURE YH309(以上均為三菱化學公司製造)等。 As a commercial product of the above-mentioned alicyclic skeleton anhydride, the hydride of the acid anhydride, or the modified product of the acid anhydride, Rikacid HNA and Rikacid HNA-100 (all of which are manufactured by Shin-Nippon Chemical Co., Ltd.), and EPICURE are mentioned. YH306, EPICURE YH307, EPICURE YH308H and EPICURE YH309 (all of which are manufactured by Mitsubishi Chemical Corporation).

硬化劑(B)亦較佳為甲基耐地酸酐或三烷基四氫鄰苯二 甲酸酐。藉由使用甲基耐地酸酐或三烷基四氫鄰苯二甲酸酐，硬化物之耐水性提高。 The hardener (B) is also preferably methylalic acid anhydride or trialkyltetrahydroortylene Formic anhydride. The water resistance of the cured product is improved by using methylic acid anhydride or trialkyltetrahydrophthalic anhydride.

上述第1硬化性組合物所含之上述總樹脂成分X1之合計100重量%中，硬化劑(B)之含量較佳為0.5重量%以上，更佳為1重量%以上，較佳為50重量%以下，更佳為40重量%以下。若硬化劑(B)之含量為上述下限以上，則容易使第1硬化性組合物充分地硬化。若硬化劑(B)之含量為上述上限以下，則不易產生不參與硬化之剩餘之硬化劑(B)。因此，硬化物之耐熱性及接著性進一步提高。 The content of the curing agent (B) is preferably 0.5% by weight or more, more preferably 1% by weight or more, and preferably 50% by weight based on 100% by weight of the total of the total resin component X1 contained in the first curable composition. % or less, more preferably 40% by weight or less. When the content of the curing agent (B) is at least the above lower limit, the first curable composition is easily cured sufficiently. When the content of the curing agent (B) is at most the above upper limit, the remaining hardener (B) which does not participate in the hardening is less likely to be generated. Therefore, the heat resistance and adhesion of the cured product are further improved.

上述第2硬化性組合物所含之上述總樹脂成分X2之合計100重量%中，硬化劑(B)之含量較佳為0.5重量%以上，更佳為1重量%以上，較佳為50重量%以下，更佳為40重量%以下。若硬化劑(B)之含量為上述下限以上，則容易使第2硬化性組合物充分地硬化。若硬化劑(B)之含量為上述上限以下，則不易產生不參與硬化之剩餘之硬化劑(B)。因此，硬化物之耐熱性及接著性進一步提高。再者，於本說明書中，上述硬化劑均包含於樹脂成分中。 The content of the curing agent (B) is preferably 0.5% by weight or more, more preferably 1% by weight or more, and preferably 50% by weight based on 100% by weight of the total of the total resin component X2 contained in the second curable composition. % or less, more preferably 40% by weight or less. When the content of the curing agent (B) is at least the above lower limit, the second curable composition is easily cured sufficiently. When the content of the curing agent (B) is at most the above upper limit, the remaining hardener (B) which does not participate in the hardening is less likely to be generated. Therefore, the heat resistance and adhesion of the cured product are further improved. Furthermore, in the present specification, the above curing agent is contained in the resin component.

(無機填料(C)) (Inorganic filler (C))

上述第1、第2絕緣層分別含有無機填料(C)。上述第1絕緣層所含之無機填料(C)之導熱率為10 W/m．K以上。較佳為上述第1、第2硬化性組合物分別含有無機填料(C)。上述第1硬化性組合物所含之無機填料(C)之導熱率為10 W/m．K以上。藉由使用無機填料(C)，硬化物之導熱性提高。其結果，硬化物之導熱性提高。上述第1、第2絕緣層 中各自使用之無機填料(C)可僅使用一種，亦可併用兩種以上。上述第1絕緣層所使用之無機填料(C)與上述第2絕緣層所使用之無機填料(C)可相同亦可不同。 Each of the first and second insulating layers contains an inorganic filler (C). The thermal conductivity of the inorganic filler (C) contained in the first insulating layer is 10 W/m. K or more. It is preferred that each of the first and second curable compositions contains an inorganic filler (C). The thermal conductivity of the inorganic filler (C) contained in the first curable composition is 10 W/m. K or more. By using the inorganic filler (C), the thermal conductivity of the cured product is improved. As a result, the thermal conductivity of the cured product is improved. The first and second insulating layers The inorganic filler (C) used in each of them may be used singly or in combination of two or more. The inorganic filler (C) used in the first insulating layer may be the same as or different from the inorganic filler (C) used in the second insulating layer.

就進一步提高硬化物之導熱性之觀點而言，第1絕緣層及第1硬化性組合物所含之無機填料(C)之導熱率較佳為15 W/m．K以上，更佳為20 W/m．K以上。就進一步提高硬化物之導熱性之觀點而言，第2絕緣層及第2硬化性組合物所含之無機填料(C)之導熱率較佳為10 W/m．K以上，更佳為15 W/m．K以上，進而較佳為20 W/m．K以上。無機填料(C)之導熱率之上限並無特別限定。導熱率為300 W/m．K左右之無機填料廣為人知，又，可容易地獲取導熱率為200 W/m．K左右之無機填料。 The thermal conductivity of the inorganic filler (C) contained in the first insulating layer and the first curable composition is preferably 15 W/m from the viewpoint of further improving the thermal conductivity of the cured product. K or more, more preferably 20 W/m. K or more. The thermal conductivity of the inorganic filler (C) contained in the second insulating layer and the second curable composition is preferably 10 W/m from the viewpoint of further improving the thermal conductivity of the cured product. Above K, more preferably 15 W/m. K or more, and further preferably 20 W/m. K or more. The upper limit of the thermal conductivity of the inorganic filler (C) is not particularly limited. The thermal conductivity is 300 W/m. The inorganic filler around K is widely known, and the thermal conductivity can be easily obtained at 200 W/m. An inorganic filler of about K.

無機填料(C)較佳為選自由氧化鋁、合成菱鎂礦、晶質二氧化矽、氮化硼、氮化鋁、氮化矽、碳化矽、氧化鋅及氧化鎂所組成之群中之至少一種，更佳為選自由氧化鋁、晶質二氧化矽、氮化硼及氮化鋁所組成之群中之至少一種。藉由使用該等較佳之無機填料，硬化物之導熱性進一步提高。就進一步提高硬化物之導熱性之觀點而言，上述第1絕緣層所含之上述無機填料、及上述第2絕緣層所含之上述無機填料較佳為分別選自由氧化鋁、晶質二氧化矽、氮化硼及氮化鋁所組成之群中之至少一種。為了進一步提高硬化物之導熱性，上述第1絕緣層所含之上述無機填料亦較佳為選自由氧化鋁、晶質二氧化矽及氮化硼所組成之群中之至少一種。又，上述第2絕緣層所含之上述無機填 料亦可為選自由氧化鋁、晶質二氧化矽及氮化硼所組成之群中之至少一種。 The inorganic filler (C) is preferably selected from the group consisting of alumina, synthetic magnesite, crystalline ceria, boron nitride, aluminum nitride, tantalum nitride, niobium carbide, zinc oxide, and magnesium oxide. At least one, more preferably at least one selected from the group consisting of alumina, crystalline ceria, boron nitride, and aluminum nitride. By using these preferred inorganic fillers, the thermal conductivity of the cured product is further improved. The inorganic filler contained in the first insulating layer and the inorganic filler contained in the second insulating layer are preferably selected from alumina, crystal dioxide, respectively, from the viewpoint of further improving the thermal conductivity of the cured product. At least one of the group consisting of bismuth, boron nitride, and aluminum nitride. In order to further improve the thermal conductivity of the cured product, the inorganic filler contained in the first insulating layer is preferably at least one selected from the group consisting of alumina, crystalline ceria, and boron nitride. Further, the inorganic filler contained in the second insulating layer The material may be at least one selected from the group consisting of alumina, crystalline ceria, and boron nitride.

無機填料(C)更佳為選自由球狀氧化鋁、粉碎氧化鋁、晶質二氧化矽、氮化硼、凝聚粒子及球狀氮化鋁所組成之群中之至少一種。藉由使用該等較佳之填料，硬化物之導熱性進一步提高。上述氮化硼與上述凝聚粒子較佳為不為凝聚粒子之氮化硼與氮化硼凝聚粒子。 The inorganic filler (C) is more preferably at least one selected from the group consisting of spherical alumina, pulverized alumina, crystalline ceria, boron nitride, agglomerated particles, and spherical aluminum nitride. By using these preferred fillers, the thermal conductivity of the cured product is further improved. The boron nitride and the agglomerated particles are preferably boron nitride and boron nitride agglomerated particles which are not aggregated particles.

無機填料(C)較佳為含有新莫氏硬度為12以下之無機填料。上述新莫氏硬度為12以下之無機填料之新莫氏硬度更佳為9以下。藉由使用新莫氏硬度為上述上限以下之無機填料，硬化物之加工性進一步提高。 The inorganic filler (C) preferably contains an inorganic filler having a new Mohs hardness of 12 or less. The new Mohs hardness of the above-mentioned inorganic filler having a new Mohs hardness of 12 or less is more preferably 9 or less. By using an inorganic filler having a new Mohs hardness of not more than the above upper limit, the workability of the cured product is further improved.

就進一步提高硬化物之加工性之觀點而言，無機填料(C)較佳為選自由合成菱鎂礦、結晶二氧化矽、氧化鋅、及氧化鎂所組成之群中之至少一種。該等無機填料之新莫氏硬度為9以下。 The inorganic filler (C) is preferably at least one selected from the group consisting of synthetic magnesite, crystalline ceria, zinc oxide, and magnesium oxide from the viewpoint of further improving the processability of the cured product. The new Mohs hardness of the inorganic fillers is 9 or less.

無機填料(C)可含有球狀之填料(球狀填料)，可含有粉碎之填料(粉碎填料)，亦可含有板狀之填料(板狀填料)。無機填料(C)尤佳為含有球狀填料。由於球狀填料可以高密度填充，故而藉由使用球狀填料，硬化物之導熱性進一步提高。 The inorganic filler (C) may contain a spherical filler (spherical filler), may contain a pulverized filler (pulverized filler), or may have a plate-like filler (plate filler). The inorganic filler (C) is particularly preferably a spherical filler. Since the spherical filler can be filled at a high density, the thermal conductivity of the cured product is further improved by using the spherical filler.

作為上述粉碎填料，可列舉粉碎氧化鋁等。粉碎填料例如可藉由使用單軸粉碎機、雙軸粉碎機、錘碎機或球磨機等粉碎塊狀之無機物質而獲得。藉由使用粉碎填料，絕緣層中之填料容易成為橋接或有效地靠近之結構。因此，硬 化物之導熱性進一步提高。又，通常而言，粉碎填料較通常之填料廉價。因此，藉由使用粉碎填料，積層體之成本降低。 Examples of the pulverized filler include pulverized alumina and the like. The pulverized filler can be obtained, for example, by pulverizing a block-shaped inorganic substance using a uniaxial pulverizer, a biaxial pulverizer, a hammer mill, or a ball mill. By using the pulverized filler, the filler in the insulating layer is liable to become a bridge or an effective close structure. Therefore, hard The thermal conductivity of the compound is further improved. Also, in general, pulverized fillers are less expensive than conventional fillers. Therefore, the cost of the laminated body is lowered by using the pulverized filler.

上述粉碎填料之平均粒徑較佳為12 μm以下，更佳為10 μm以下，較佳為1 μm以上。若粉碎填料之平均粒徑為上述上限以下，則可使粉碎填料高密度地分散於第1、第2硬化性組合物中，且硬化物之耐電壓性進一步提高。若粉碎填料之平均粒徑為上述下限以上，則容易使粉碎填料高密度地填充。 The average particle diameter of the pulverized filler is preferably 12 μm or less, more preferably 10 μm or less, and still more preferably 1 μm or more. When the average particle diameter of the pulverized filler is not more than the above upper limit, the pulverized filler can be dispersed in the first and second curable compositions at a high density, and the withstand voltage of the cured product can be further improved. When the average particle diameter of the pulverized filler is at least the above lower limit, the pulverized filler is easily filled at a high density.

粉碎填料之縱橫比並無特別限定。粉碎填料之縱橫比較佳為1.5以上，且較佳為20以下。縱橫比未達1.5之填料相對昂貴，積層體之成本提高。若上述縱橫比為20以下，則容易填充粉碎填料。 The aspect ratio of the pulverized filler is not particularly limited. The aspect ratio of the pulverized filler is preferably 1.5 or more, and preferably 20 or less. Fillers having an aspect ratio of less than 1.5 are relatively expensive, and the cost of the laminate is increased. When the aspect ratio is 20 or less, the pulverized filler is easily filled.

上述粉碎填料之縱橫比例如可藉由使用數位圖像分析方式粒度分佈測定裝置(日本Rufuto公司製造之「FPA」)測定填料之粉碎面而求出。 The aspect ratio of the pulverized filler can be determined, for example, by measuring the pulverized surface of the filler by using a digital image analysis type particle size distribution measuring apparatus ("FPA" manufactured by Rufuto Co., Ltd., Japan).

於無機填料(C)為球狀填料之情形時，球狀填料之平均粒徑較佳為0.1 μm以上，且較佳為40 μm以下。若平均粒徑為0.1 μm以上，則可容易地以高密度填充無機填料(C)。若平均粒徑為40 μm以下，則硬化物之耐電壓性進一步提高。 In the case where the inorganic filler (C) is a spherical filler, the average particle diameter of the spherical filler is preferably 0.1 μm or more, and preferably 40 μm or less. When the average particle diameter is 0.1 μm or more, the inorganic filler (C) can be easily filled at a high density. When the average particle diameter is 40 μm or less, the withstand voltage of the cured product is further improved.

所謂上述「平均粒徑」，係指根據利用雷射繞射式粒度分佈測定裝置測定之體積平均下之粒度分佈測定結果而求出之平均粒徑。 The "average particle diameter" refers to an average particle diameter obtained by measuring the particle size distribution measured by a volume average measured by a laser diffraction type particle size distribution measuring apparatus.

上述板狀填料之平均長徑較佳為0.1 μm以上，更佳為0.5 μm以上，進而較佳為1 μm以上，較佳為10 μm以下，更佳為9 μm以下。若板狀填料之平均長徑為上述下限以上及上述上限以下，則複數個無機填料變得容易接觸。因此，硬化物之導熱性進一步提高。又，若板狀填料之平均長徑為上述下限以上，則容易填充板狀填料。若板狀填料之平均長徑為上述上限以下，則硬化物之絕緣性提高。 The average long diameter of the platy filler is preferably 0.1 μm or more, more preferably 0.5 μm or more, still more preferably 1 μm or more, more preferably 10 μm or less, still more preferably 9 μm or less. When the average long diameter of the platy filler is not less than the above lower limit and not more than the above upper limit, the plurality of inorganic fillers are easily contacted. Therefore, the thermal conductivity of the cured product is further improved. Further, when the average long diameter of the platy filler is at least the above lower limit, the platy filler is easily filled. When the average long diameter of the platy filler is not more than the above upper limit, the insulating property of the cured product is improved.

上述板狀填料之平均厚度較佳為100 nm以上。若板狀填料之厚度為上述下限以上，則硬化物之導熱性進一步提高。又，上述板狀填料之縱橫比較佳為2以上，更佳為3以上，較佳為50以下，更佳為45以下。若板狀填料之縱橫比為上述上限以下，則容易填充板狀填料。板狀填料之縱橫比更佳為於3~45之範圍內。 The average thickness of the above platy filler is preferably 100 nm or more. When the thickness of the plate-like filler is at least the above lower limit, the thermal conductivity of the cured product is further improved. Further, the aspect ratio of the plate-like filler is preferably 2 or more, more preferably 3 or more, more preferably 50 or less, still more preferably 45 or less. When the aspect ratio of the platy filler is not more than the above upper limit, the platy filler is easily filled. The aspect ratio of the platy filler is preferably in the range of 3 to 45.

上述板狀填料較佳為氧化鋁及氮化硼中之至少一者。於該情形時，硬化物之導熱性進一步提高。 The platy filler is preferably at least one of alumina and boron nitride. In this case, the thermal conductivity of the cured product is further improved.

就進一步提高硬化物之導熱性之觀點而言，上述第1絕緣層所含之上述無機填料(C)較佳為包含板狀填料。 The inorganic filler (C) contained in the first insulating layer preferably contains a plate-like filler from the viewpoint of further improving the thermal conductivity of the cured product.

就進一步提高硬化物之導熱性之觀點而言，上述第1絕緣層所含之上述無機填料(C)較佳為包含粉碎填料或球狀填料、及板狀填料。 The inorganic filler (C) contained in the first insulating layer preferably contains a pulverized filler, a spherical filler, and a plate-like filler from the viewpoint of further improving the thermal conductivity of the cured product.

就提高無機填料(C)整體之填充性，且均衡地提高絕緣層整體中之導熱性、及作為硬化物之第2絕緣層與導電層之接著性兩者之觀點而言，上述第1絕緣層100重量%中，板狀填料之含量較佳為未達50重量%，更佳為未達30重量 %，進而較佳為未達10重量%。 The first insulation is improved from the viewpoint of improving the filling property of the inorganic filler (C) as a whole and improving the thermal conductivity in the entire insulating layer and the adhesion between the second insulating layer and the conductive layer as a cured product. The content of the platy filler in the layer 100% by weight is preferably less than 50% by weight, more preferably less than 30% by weight. %, further preferably less than 10% by weight.

於上述第1絕緣層所含之上述無機填料(C)包含粉碎填料或球狀填料、及板狀填料之情形時，上述第1絕緣層較佳為以重量比計以9.5：0.5~5：5包含粉碎填料、球狀填料與板狀填料，更佳為以9：1~7：3含有粉碎填料、球狀填料與板狀填料。 In the case where the inorganic filler (C) contained in the first insulating layer contains a pulverized filler, a spherical filler, and a plate-like filler, the first insulating layer is preferably 9.5:0.5 to 5 by weight: 5 comprises pulverized filler, spherical filler and platy filler, more preferably 9:1~7:3 containing pulverized filler, spherical filler and platy filler.

就抑制硬化物之厚度不均，且有效地提高硬化物之導熱性之觀點而言，無機填料(C)之最大粒徑較佳為70 μm以下，更佳為50 μm以下。再者，上述粉碎填料及上述板狀填料之最大粒徑係指最大粒子之長徑。再者，為滿足上述關係，可使用藉由過濾或利用篩網之分級等方法，以實質上幾乎不存在最大粒徑較大之填料之方式處理之填料。無機填料之最大粒徑例如可藉由使用數位圖像分析方式粒度分佈測定裝置(日本Rufuto公司製造之「FPA」)，測定觀察100個無機填料時之最大粒徑而求出。 The inorganic filler (C) has a maximum particle diameter of preferably 70 μm or less, more preferably 50 μm or less, from the viewpoint of suppressing the thickness unevenness of the cured product and effectively improving the thermal conductivity of the cured product. Further, the maximum particle diameter of the pulverized filler and the platy filler refers to the long diameter of the largest particles. Further, in order to satisfy the above relationship, a filler which is treated in such a manner that the filler having a large maximum particle diameter is substantially hardly present by filtration or by grading of a sieve may be used. The maximum particle diameter of the inorganic filler can be determined, for example, by using a digital image analysis type particle size distribution measuring apparatus ("FPA" manufactured by Rufuto Co., Ltd., Japan) and measuring the maximum particle diameter when 100 inorganic fillers are observed.

第1絕緣層100重量%中，無機填料(C)之含量為86重量%以上且未達97重量%。第1硬化性組合物100重量%中，無機填料(C)之含量較佳為86重量%以上且未達97重量%。藉由使第1絕緣層及第1硬化性組合物中之無機填料(C)之含量為86重量%以上且未達97重量%，而使作為硬化物之第1絕緣層之硬化狀態變良好，且導熱性變得相當高。 The content of the inorganic filler (C) in 100% by weight of the first insulating layer is 86% by weight or more and less than 97% by weight. The content of the inorganic filler (C) in 100% by weight of the first curable composition is preferably 86% by weight or more and less than 97% by weight. When the content of the inorganic filler (C) in the first insulating layer and the first curable composition is 86% by weight or more and less than 97% by weight, the cured state of the first insulating layer as a cured product is improved. And the thermal conductivity becomes quite high.

第2絕緣層100重量%中，無機填料(C)之含量為67重量%以上且未達95重量%。第2硬化性組合物100重量%中，無機填料(C)之含量較佳為67重量%以上且未達95重量%。藉 由使第2絕緣層及第2硬化性組合物中之無機填料(C)之含量為67重量%以上且未達95重量%，而使作為硬化物之第2絕緣層之硬化狀態變良好，且作為硬化物之第2絕緣層與導電層之接著性變得相當高。 The content of the inorganic filler (C) in 100% by weight of the second insulating layer is 67% by weight or more and less than 95% by weight. The content of the inorganic filler (C) in 100% by weight of the second curable composition is preferably 67% by weight or more and less than 95% by weight. borrow When the content of the inorganic filler (C) in the second insulating layer and the second curable composition is 67% by weight or more and less than 95% by weight, the cured state of the second insulating layer as a cured product is improved. Further, the adhesion between the second insulating layer as a cured material and the conductive layer becomes relatively high.

就均衡地提高絕緣層整體中之導熱性、及作為硬化物之第2絕緣層與導電層之接著性兩者之觀點而言，第1絕緣層100重量%中之無機填料(C)之含量較佳為多於第2絕緣層100重量%中之無機填料(C)之含量，更佳為多1重量%以上，更佳為多5重量%以上，較佳為多10重量%以上。 The content of the inorganic filler (C) in 100% by weight of the first insulating layer from the viewpoint of uniformly improving the thermal conductivity in the entire insulating layer and the adhesion between the second insulating layer and the conductive layer as the cured product The content of the inorganic filler (C) in 100% by weight of the second insulating layer is more preferably 1% by weight or more, more preferably 5% by weight or more, and still more preferably 10% by weight or more.

就均衡地提高絕緣層整體中之導熱性、及作為硬化物之第2絕緣層與導電層之接著性兩者之觀點而言，第2絕緣層100重量%中之無機填料(C)之含量相對於第1絕緣層100重量%中之無機填料(C)之含量的比(第2絕緣層100重量%中之無機填料(C)之含量/第1絕緣層100重量%中之無機填料(C)之含量)較佳為0.7以上，且較佳為0.95以下。 The content of the inorganic filler (C) in 100% by weight of the second insulating layer from the viewpoint of uniformly improving the thermal conductivity in the entire insulating layer and the adhesion between the second insulating layer and the conductive layer as the cured product The ratio of the content of the inorganic filler (C) in 100% by weight of the first insulating layer (the content of the inorganic filler (C) in 100% by weight of the second insulating layer / the inorganic filler in 100% by weight of the first insulating layer ( The content of C) is preferably 0.7 or more, and preferably 0.95 or less.

(阻燃劑) (flame retardant)

較佳為上述第1、第2絕緣層中之至少一者包含阻燃劑。該阻燃劑較佳為包含磷化合物。藉由使用磷化合物，硬化物之阻燃性進一步變良好。可使上述第1絕緣層包含磷化合物，可使上述第2絕緣層包含磷化合物，亦可使上述第1、第2絕緣層兩者包含磷化合物。上述磷化合物可僅使用一種，亦可併用兩種以上。 It is preferable that at least one of the first and second insulating layers contains a flame retardant. The flame retardant preferably contains a phosphorus compound. By using a phosphorus compound, the flame retardancy of the cured product is further improved. The first insulating layer may contain a phosphorus compound, and the second insulating layer may contain a phosphorus compound, or both of the first and second insulating layers may contain a phosphorus compound. These phosphorus compounds may be used alone or in combination of two or more.

就進一步改善硬化物之阻燃性之觀點而言，上述磷化合物較佳為下述式(1)或下述式(2)所表示之磷化合物。因 此，較佳為上述第1、第2絕緣層中之至少一者包含下述式(1)或下述式(2)所表示之磷化合物。較佳為上述第1、第2絕緣層中之至少一者包含三苯基膦或磷酸三氯乙酯。 The phosphorus compound is preferably a phosphorus compound represented by the following formula (1) or the following formula (2) from the viewpoint of further improving the flame retardancy of the cured product. because Therefore, at least one of the first and second insulating layers preferably contains a phosphorus compound represented by the following formula (1) or the following formula (2). It is preferable that at least one of the first and second insulating layers contains triphenylphosphine or trichloroethyl phosphate.

上述第1絕緣層100重量%中，上述磷化合物之含量較佳為0.5重量%以上，更佳為1重量%以上，較佳為20重量%以下，更佳為15重量%以下。上述第2絕緣層100重量%中，上述磷化合物之含量較佳為0.5重量%以上，更佳為1重量%以上，較佳為20重量%以下，更佳為15重量%以下。上述第1、第2絕緣層之整體100重量%中，上述磷化合物之含量較佳為0.5重量%以上，更佳為1重量%以上，較佳為20重量%以下，更佳為15重量%以下。若上述磷化合物之 含量為上述下限以上及上述上限以下，則可較高地維持硬化物之絕緣性，進一步改善阻燃性。上述磷化合物包含於樹脂成分中。 The content of the phosphorus compound in 100% by weight of the first insulating layer is preferably 0.5% by weight or more, more preferably 1% by weight or more, more preferably 20% by weight or less, still more preferably 15% by weight or less. The content of the phosphorus compound in 100% by weight of the second insulating layer is preferably 0.5% by weight or more, more preferably 1% by weight or more, preferably 20% by weight or less, and more preferably 15% by weight or less. The content of the phosphorus compound in 100% by weight of the entire first and second insulating layers is preferably 0.5% by weight or more, more preferably 1% by weight or more, preferably 20% by weight or less, and still more preferably 15% by weight. the following. If the above phosphorus compound When the content is at least the above lower limit and not more than the above upper limit, the insulating property of the cured product can be maintained high, and the flame retardancy can be further improved. The above phosphorus compound is contained in the resin component.

(其他成分) (other ingredients)

上述第1、第2絕緣層及上述第1、第2硬化性組合物可含有重量平均分子量為10000以上之聚合物。該聚合物可僅使用一種，亦可併用兩種以上。 The first and second insulating layers and the first and second curable compositions may contain a polymer having a weight average molecular weight of 10,000 or more. These polymers may be used alone or in combination of two or more.

可使用熱塑性樹脂及熱硬化性樹脂等硬化性樹脂等作為上述聚合物。上述聚合物較佳為硬化性樹脂。 A curable resin such as a thermoplastic resin or a thermosetting resin can be used as the above polymer. The above polymer is preferably a curable resin.

上述熱塑性樹脂及熱硬化性樹脂並無特別限定。作為上述熱塑性樹脂，並無特別限定，可列舉：苯乙烯樹脂、苯氧基樹脂、鄰苯二甲酸酯樹脂、熱塑性胺基甲酸酯樹脂、聚醯胺樹脂、熱塑性聚醯亞胺樹脂、酮樹脂及降烯樹脂等。作為上述熱硬化性樹脂，並無特別限定，可列舉：胺基樹脂、酚樹脂、熱硬化性胺基甲酸酯樹脂、環氧樹脂、熱硬化性聚醯亞胺樹脂及胺基醇酸樹脂等。作為上述胺基樹脂，可列舉：脲樹脂及三聚氰胺樹脂等。 The thermoplastic resin and the thermosetting resin are not particularly limited. The thermoplastic resin is not particularly limited, and examples thereof include a styrene resin, a phenoxy resin, a phthalate resin, a thermoplastic urethane resin, a polyamide resin, and a thermoplastic polyimide resin. Ketone resin and drop Alkene resin, etc. The thermosetting resin is not particularly limited, and examples thereof include an amine resin, a phenol resin, a thermosetting urethane resin, an epoxy resin, a thermosetting polyimide resin, and an amino alkyd resin. Wait. Examples of the amine-based resin include a urea resin and a melamine resin.

就抑制硬化物之氧化劣化、進一步提高硬化物之耐冷熱循環特性及耐熱性、進而進一步降低硬化物之吸水率之觀點而言，聚合物較佳為苯乙烯樹脂、苯氧基樹脂或環氧樹脂，更佳為苯氧基樹脂或環氧樹脂，進而較佳為苯氧基樹脂。尤其是藉由使用苯氧基樹脂或環氧樹脂，硬化物之耐熱性進一步提高。又，藉由使用苯氧基樹脂，硬化物之彈性模數進一步降低，且硬化物之耐冷熱循環特性進一步提 高。再者，聚合物可不具有環氧基等環狀醚基。 The polymer is preferably a styrene resin, a phenoxy resin or an epoxy resin from the viewpoint of suppressing oxidative degradation of the cured product, further improving the cold and heat cycle resistance and heat resistance of the cured product, and further reducing the water absorption of the cured product. The resin is more preferably a phenoxy resin or an epoxy resin, and further preferably a phenoxy resin. In particular, by using a phenoxy resin or an epoxy resin, the heat resistance of the cured product is further improved. Moreover, by using a phenoxy resin, the elastic modulus of the cured product is further lowered, and the cold-heat cycle resistance of the cured product is further improved. high. Further, the polymer may not have a cyclic ether group such as an epoxy group.

作為上述苯乙烯樹脂，具體而言，可使用苯乙烯系單體之均聚物、及苯乙烯系單體與丙烯酸系單體之共聚物等。其中，較佳為具有苯乙烯-甲基丙烯酸縮水甘油酯之結構之苯乙烯聚合物。 Specific examples of the styrene resin include a homopolymer of a styrene monomer, a copolymer of a styrene monomer and an acrylic monomer, and the like. Among them, a styrene polymer having a structure of styrene-glycidyl methacrylate is preferred.

作為上述苯乙烯系單體，例如可列舉：苯乙烯、鄰甲基苯乙烯、間甲基苯乙烯、對甲基苯乙烯、對甲氧基苯乙烯、對苯基苯乙烯、對氯苯乙烯、對乙基苯乙烯、對正丁基苯乙烯、對第三丁基苯乙烯、對正己基苯乙烯、對正辛基苯乙烯、對正壬基苯乙烯、對正癸基苯乙烯、對正十二烷基苯乙烯、2,4-二甲基苯乙烯及3,4-二氯苯乙烯等。 Examples of the styrene-based monomer include styrene, o-methyl styrene, m-methyl styrene, p-methyl styrene, p-methoxy styrene, p-phenyl styrene, and p-chlorostyrene. , p-ethyl styrene, p-n-butyl styrene, p-tert-butyl styrene, p-n-hexyl styrene, p-n-octyl styrene, p-n-decyl styrene, p-n-decyl styrene, pair N-dodecylstyrene, 2,4-dimethylstyrene and 3,4-dichlorostyrene.

具體而言，上述苯氧基樹脂例如為使表鹵醇與二元酚化合物反應而獲得之樹脂、或使二元環氧化合物與二元酚化合物反應而獲得之樹脂。 Specifically, the phenoxy resin is, for example, a resin obtained by reacting an epihalohydrin with a dihydric phenol compound, or a resin obtained by reacting a binary epoxy compound with a dihydric phenol compound.

上述苯氧基樹脂較佳為具有選自由雙酚A型骨架、雙酚F型骨架、雙酚A/F混合型骨架、萘骨架、茀骨架、聯苯骨架、蒽骨架、芘骨架、骨架、金剛烷骨架及二環戊二烯骨架所組成之群中之至少一種骨架。其中，上述苯氧基樹脂更佳為具有選自由雙酚A型骨架、雙酚F型骨架、雙酚A/F混合型骨架、萘骨架、茀骨架及聯苯骨架所組成之群中之至少一種骨架，進而較佳為具有茀骨架及聯苯骨架中之至少一種骨架。藉由使用具有該等較佳之骨架之苯氧基樹脂，硬化物之耐熱性進一步提高。 The phenoxy resin preferably has a skeleton selected from the group consisting of a bisphenol A type skeleton, a bisphenol F type skeleton, a bisphenol A/F mixed type skeleton, a naphthalene skeleton, an anthracene skeleton, a biphenyl skeleton, an anthracene skeleton, an anthracene skeleton, At least one of a group consisting of a skeleton, an adamantane skeleton, and a dicyclopentadiene skeleton. Preferably, the phenoxy resin further has at least one selected from the group consisting of a bisphenol A type skeleton, a bisphenol F type skeleton, a bisphenol A/F mixed type skeleton, a naphthalene skeleton, an anthracene skeleton, and a biphenyl skeleton. A skeleton, which further preferably has at least one of an anthracene skeleton and a biphenyl skeleton. By using a phenoxy resin having such a preferred skeleton, the heat resistance of the cured product is further improved.

上述環氧樹脂為上述苯氧基樹脂以外之環氧樹脂。作為 上述環氧樹脂，可列舉：含苯乙烯骨架之環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、聯苯酚型環氧樹脂、萘型環氧樹脂、茀型環氧樹脂、苯酚芳烷基型環氧樹脂、萘酚芳烷基型環氧樹脂、二環戊二烯型環氧樹脂、蒽型環氧樹脂、具有金剛烷骨架之環氧樹脂、具有三環癸烷骨架之環氧樹脂、及於骨架中具有三核之環氧樹脂等。上述聚合物包含於樹脂成分中。 The epoxy resin is an epoxy resin other than the above phenoxy resin. Examples of the epoxy resin include an epoxy resin containing a styrene skeleton, a bisphenol A epoxy resin, a bisphenol F epoxy resin, a bisphenol S epoxy resin, and a phenol novolak epoxy resin. Biphenol type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol aralkyl type epoxy resin, naphthol aralkyl type epoxy resin, dicyclopentadiene type epoxy resin, fluorene type Epoxy resin, epoxy resin having adamantane skeleton, epoxy resin having a tricyclodecane skeleton, and having three in the skeleton Nuclear epoxy resin, etc. The above polymer is contained in the resin component.

上述第1、第2絕緣層及上述第1、第2硬化性組合物可含有橡膠粒子。藉由使用該橡膠粒子，硬化物之應力緩和性及柔軟性提高。上述橡膠粒子包含於樹脂成分中。 The first and second insulating layers and the first and second curable compositions may contain rubber particles. By using the rubber particles, the stress relaxation property and flexibility of the cured product are improved. The rubber particles are contained in the resin component.

上述第1、第2絕緣層及上述第1、第2硬化性組合物可含有分散劑。藉由使用該分散劑，硬化物之導熱性及耐電壓性進一步提高。 The first and second insulating layers and the first and second curable compositions may contain a dispersing agent. By using the dispersant, the thermal conductivity and withstand voltage of the cured product are further improved.

上述分散劑較佳為含有包含具有氫鍵性之氫原子之官能基。藉由使上述分散劑含有包含具有氫鍵性之氫原子之官能基，硬化物之導熱性及耐電壓性進一步提高。作為上述包含具有氫鍵性之氫原子之官能基，例如可列舉：羧基(pKa=4)、磷酸基(pKa=7)、及酚基(pKa=10)等。 The above dispersing agent preferably contains a functional group containing a hydrogen atom having hydrogen bonding. When the dispersant contains a functional group containing a hydrogen atom having hydrogen bonding properties, the thermal conductivity and withstand voltage of the cured product are further improved. Examples of the functional group containing a hydrogen atom having hydrogen bonding properties include a carboxyl group (pKa = 4), a phosphoric acid group (pKa = 7), and a phenol group (pKa = 10).

上述包含具有氫鍵性之氫原子之官能基之pKa較佳為2以上，更佳為3以上，較佳為10以下，更佳為9以下。若上述官能基之pKa為上述下限以上，則上述分散劑之酸性度不會變得過高。因此，第1、第2硬化性組合物及硬化前之第1、第2絕緣層之儲存穩定性進一步提高。若上述官能基之 pKa為上述上限以下，則可充分地發揮作為上述分散劑之功能，且硬化物之導熱性及耐電壓性進一步提高。 The pKa of the functional group containing a hydrogen atom having hydrogen bonding is preferably 2 or more, more preferably 3 or more, more preferably 10 or less, still more preferably 9 or less. When the pKa of the functional group is at least the above lower limit, the acidity of the dispersing agent does not become excessively high. Therefore, the storage stability of the first and second curable compositions and the first and second insulating layers before curing is further improved. If the above functional group When the pKa is at most the above upper limit, the function as the dispersing agent can be sufficiently exhibited, and the thermal conductivity and the withstand voltage of the cured product are further improved.

上述包含具有氫鍵性之氫原子之官能基較佳為羧基或磷酸基。於該情形時，硬化物之導熱性及耐電壓性進一步提高。 The functional group containing a hydrogen atom having hydrogen bonding is preferably a carboxyl group or a phosphoric acid group. In this case, the thermal conductivity and withstand voltage of the cured product are further improved.

作為上述分散劑，具體而言，例如可列舉：聚酯系羧酸、聚醚系羧酸、聚丙烯酸系羧酸、脂肪族系羧酸、聚矽氧烷系羧酸、聚酯系磷酸、聚醚系磷酸、聚丙烯酸系磷酸、脂肪族系磷酸、聚矽氧烷系磷酸、聚酯系苯酚、聚醚系苯酚、聚丙烯酸系苯酚、脂肪族系苯酚、及聚矽氧烷系苯酚等。上述分散劑可僅使用一種，亦可併用兩種以上。 Specific examples of the dispersant include a polyester carboxylic acid, a polyether carboxylic acid, a polyacrylic carboxylic acid, an aliphatic carboxylic acid, a polyoxyalkylene carboxylic acid, and a polyester phosphate. Polyether phosphoric acid, polyacrylic acid phosphoric acid, aliphatic phosphoric acid, polyoxyalkylene phosphate, polyester phenol, polyether phenol, polyacrylic phenol, aliphatic phenol, polyoxyalkylene phenol, etc. . These dispersing agents may be used alone or in combination of two or more.

上述總樹脂成分X1及上述總樹脂成分X2之合計100重量%中，上述分散劑之含量較佳為0.01重量%以上，更佳為0.1重量%以上，較佳為20重量%以下，更佳為10重量%以下。若上述分散劑之含量為上述下限以上及上限以下，則可抑制無機填料(C)之凝聚，且硬化物之導熱性及耐電壓性進一步提高。上述分散劑包含於樹脂成分中。 The content of the dispersant is preferably 0.01% by weight or more, more preferably 0.1% by weight or more, and most preferably 20% by weight or less, more preferably 100% by weight based on 100% by weight of the total resin component X1 and the total resin component X2. 10% by weight or less. When the content of the dispersant is not less than the above lower limit and not more than the upper limit, aggregation of the inorganic filler (C) can be suppressed, and thermal conductivity and withstand voltage of the cured product can be further improved. The above dispersing agent is contained in the resin component.

上述第1、第2絕緣層及上述第1、第2硬化性組合物可含有玻璃布、玻璃不織布、芳族聚醯胺不織布等基材物質。上述第1、第2絕緣層可分別為預浸料，但較佳不為預浸料。上述第1、第2絕緣層及上述第1、第2硬化性組合物較佳為不含基材物質，尤佳為不含玻璃布。於上述第1、第2絕緣層及上述第1、第2硬化性組合物不含上述基材物質之情形時，絕緣層整體之厚度變薄，硬化物之導熱性進一步 提高，進而可視需要容易地對絕緣層進行雷射加工或鑽頭開孔加工等各種加工。 The first and second insulating layers and the first and second curable compositions may contain a base material such as a glass cloth, a glass nonwoven fabric, or an aromatic polyamide nonwoven fabric. The first and second insulating layers may be prepregs, respectively, but are preferably not prepregs. The first and second insulating layers and the first and second curable compositions preferably do not contain a substrate material, and particularly preferably do not contain a glass cloth. When the first and second insulating layers and the first and second curable compositions do not contain the substrate material, the thickness of the entire insulating layer is reduced, and the thermal conductivity of the cured product is further increased. It is improved, and various processing such as laser processing or drill hole drilling can be easily performed on the insulating layer as needed.

進而，上述第1、第2絕緣層及上述第1、第2硬化性組合物亦可視需要含有矽烷偶合劑、抗氧化劑、離子捕捉劑、黏著性賦予劑、塑化劑、搖溶性賦予劑、光敏劑及著色劑等。上述矽烷偶合劑包含於樹脂成分中。 Further, the first and second insulating layers and the first and second curable compositions may optionally contain a decane coupling agent, an antioxidant, an ion scavenger, an adhesion-imparting agent, a plasticizer, a solubility-imparting agent, and Photosensitizers and colorants. The above decane coupling agent is contained in the resin component.

(第1、第2絕緣層之其他詳細情況) (Other details of the first and second insulating layers)

上述積層體之製造方法並無特別限定。作為該製造方法，例如可列舉如下方法：藉由溶劑澆鑄法等將上述第1硬化性組合物塗佈於導熱體上，進行第1硬化性組合物之硬化而形成第1絕緣層後，藉由溶劑澆鑄法等將上述第2硬化性組合物塗佈於該第1絕緣層上，視需要進行第2硬化性組合物之硬化而形成第2絕緣層；以及於藉由溶劑澆鑄法等將上述第1硬化性組合物塗佈於脫模膜上，進行第1硬化性組合物之硬化而形成第1絕緣層後，藉由溶劑澆鑄法等將上述第2硬化性組合物塗佈於該第1絕緣層上，視需要進行第2硬化性組合物之硬化，形成第2絕緣層而獲得積層膜，然後剝離脫模膜，將第1、第2絕緣層自第1絕緣層側積層於導熱體上之方法等。又，第1硬化性組合物之硬化亦可於第2硬化性組合物之塗佈後進行。第1硬化性組合物之硬化可於將第1絕緣層積層於導熱體上之前進行，亦可於積層後進行。又，亦可藉由擠出成形法形成第1、第2絕緣層。又，上述積層體之製造方法並不限定於該等方法。 The method for producing the above laminated body is not particularly limited. For example, the first curable composition is applied to a heat conductor by a solvent casting method or the like, and the first curable composition is cured to form a first insulating layer. The second curable composition is applied onto the first insulating layer by a solvent casting method or the like, and the second curable composition is cured as necessary to form a second insulating layer; and the solvent is cast by a solvent casting method or the like. The first curable composition is applied onto a release film, and the first curable composition is cured to form a first insulating layer, and then the second curable composition is applied to the mold by a solvent casting method or the like. On the first insulating layer, if necessary, the second curable composition is cured to form a second insulating layer to obtain a laminated film, and then the release film is peeled off, and the first and second insulating layers are laminated from the first insulating layer side. The method on the heat conductor, and the like. Further, the curing of the first curable composition may be performed after the application of the second curable composition. The curing of the first curable composition may be performed before the first insulating layer is laminated on the heat conductor, or may be performed after the layering. Further, the first and second insulating layers may be formed by an extrusion molding method. Moreover, the manufacturing method of the above laminated body is not limited to these methods.

第1絕緣層之導熱率較佳為3 W/m．K以上，更佳為4 W/m．K以上，進而較佳為5 W/m．K以上。第1絕緣層之導熱率越高，則絕緣層整體中之導熱性越變得充分高。 The thermal conductivity of the first insulating layer is preferably 3 W/m. K or more, more preferably 4 W/m. K or more, and further preferably 5 W/m. K or more. The higher the thermal conductivity of the first insulating layer, the more the thermal conductivity in the entire insulating layer becomes sufficiently high.

第2絕緣層之導熱率較佳為1 W/m．K以上，更佳為1.5 W/m．K以上，進而較佳為2 W/m．K以上。第2絕緣層之導熱率越高，則絕緣層整體中之導熱性越變得充分高。 The thermal conductivity of the second insulating layer is preferably 1 W/m. Above K, more preferably 1.5 W/m. K or more, and further preferably 2 W/m. K or more. The higher the thermal conductivity of the second insulating layer, the more the thermal conductivity in the entire insulating layer becomes higher.

作為硬化物之第1、第2絕緣層整體中之絕緣破壞電壓較佳為30 kV以上，更佳為40 kV以上，進而較佳為50 kV以上，尤佳為80 kV以上，最佳為100 kV以上。絕緣破壞電壓越高，則於將積層體例如用如功率元件用之類之大電流用途之情形時，越可充分地確保絕緣性。 The dielectric breakdown voltage in the entire first and second insulating layers as the cured product is preferably 30 kV or more, more preferably 40 kV or more, further preferably 50 kV or more, and particularly preferably 80 kV or more, and most preferably 100. Above kV. The higher the dielectric breakdown voltage, the more the insulation can be sufficiently ensured when the laminate is used for a large current such as a power element.

(積層體) (layered body)

於圖1中利用剖面圖表示本發明之一實施形態之積層體之一例。 An example of a laminated body according to an embodiment of the present invention is shown in cross section in Fig. 1 .

圖1所示之積層體1具備導熱率為10 W/m．K以上之導熱體2、作為半硬化物或硬化物之第1絕緣層3、及作為未硬化物或半硬化物之第2絕緣層4。 The laminated body 1 shown in Fig. 1 has a thermal conductivity of 10 W/m. The heat conductor 2 having K or more, the first insulating layer 3 as a semi-cured material or a cured product, and the second insulating layer 4 as an uncured or semi-cured material.

第1絕緣層3積層於導熱體2之表面。第1絕緣層3只要積層於導熱體2之至少一表面即可，亦可將兩個第1絕緣層各積層一個於導熱體之兩側之表面。第2絕緣層4積層於第1絕緣層3之與導熱體2側相反之表面。 The first insulating layer 3 is laminated on the surface of the heat conductor 2. The first insulating layer 3 may be laminated on at least one surface of the heat conductor 2, and the two first insulating layers may be laminated on the surfaces of both sides of the heat conductor. The second insulating layer 4 is laminated on the surface of the first insulating layer 3 opposite to the side of the heat conductor 2.

第1絕緣層3以86重量%以上且未達97重量%含有熱導率為10 W/m．K以上之無機填料，且第2絕緣層4以67重量%以上且未達95重量%含有無機填料。第1絕緣層3之硬化率為50%以上，第2絕緣層4之硬化率未達80%，且第1絕緣層3 之硬化率大於第2絕緣層4之硬化率。 The first insulating layer 3 has a thermal conductivity of 10 W/m at 86% by weight or more and less than 97% by weight. The inorganic filler of K or more, and the second insulating layer 4 contains an inorganic filler in an amount of 67% by weight or more and less than 95% by weight. The first insulating layer 3 has a hardening rate of 50% or more, the second insulating layer 4 has a hardening rate of less than 80%, and the first insulating layer 3 The hardening rate is greater than the hardening rate of the second insulating layer 4.

於圖2中，利用剖面圖表示藉由本發明之一實施形態之功率半導體模組用零件之製造方法而獲得之功率半導體模組用零件之一例。 FIG. 2 is a cross-sectional view showing an example of a component for a power semiconductor module obtained by a method for manufacturing a component for a power semiconductor module according to an embodiment of the present invention.

圖2所示之功率半導體模組用零件11係使用上述積層體1而形成。其中，於積層體1中之第1絕緣層3為半硬化物之情形時，於功率半導體模組用零件11中，使第1絕緣層3硬化。積層體1中之第2絕緣層4為未硬化物或半硬化物，相對於此，於功率半導體模組用零件11中，使第2絕緣層4硬化。 The component 11 for a power semiconductor module shown in FIG. 2 is formed using the above-described laminated body 1. In the case where the first insulating layer 3 in the laminated body 1 is a semi-cured material, the first insulating layer 3 is cured in the power semiconductor module component 11. The second insulating layer 4 in the laminated body 1 is an uncured material or a semi-cured material. In contrast, in the power semiconductor module component 11, the second insulating layer 4 is cured.

功率半導體模組用零件11包括導熱率為10 W/m．K以上之導熱體2、作為硬化物之第1絕緣層3、作為硬化物之第2絕緣層4、導電層12、及模具樹脂13。 The power semiconductor module part 11 includes a thermal conductivity of 10 W/m. The heat conductor 2 of K or more, the first insulating layer 3 as a cured product, the second insulating layer 4 as a cured material, the conductive layer 12, and the mold resin 13.

導電層12係積層於第2絕緣層4之與第1絕緣層3側相反之表面。將導熱體2、第1絕緣層3、第2絕緣層4、及導電層12埋入模具樹脂13內。較佳為導電層12之一部分自模具樹脂13中露出。 The conductive layer 12 is laminated on the surface of the second insulating layer 4 opposite to the first insulating layer 3 side. The heat conductor 2, the first insulating layer 3, the second insulating layer 4, and the conductive layer 12 are buried in the mold resin 13. It is preferable that a part of the conductive layer 12 is exposed from the mold resin 13.

功率半導體模組用零件11係藉由下述方式而獲得：將導電層12積層於積層體1中之第2絕緣層4之與第1絕緣層3側相反之表面，繼而使第2絕緣層4硬化，並且於第1絕緣層3為半硬化物之情形時，使第1絕緣層3硬化，進而將導熱體2、第1絕緣層3、第2絕緣層4、及導電層12埋入模具樹脂13內。此時，較佳為以露出導電層12之一部分之方式將導熱體2、第1絕緣層3、第2絕緣層4、及導電層12埋入模具 樹脂13內。又，亦可於將導熱體2、第1絕緣層3、第2絕緣層4、及導電層12埋入模具樹脂13內後，使第1、第2絕緣層3、4硬化。例如亦可於模具樹脂13之硬化時，使第1、第2絕緣層3、4硬化。 The power semiconductor module component 11 is obtained by laminating the conductive layer 12 on the surface of the second insulating layer 4 on the side opposite to the first insulating layer 3 in the laminated body 1, and then the second insulating layer. 4, when the first insulating layer 3 is a semi-cured material, the first insulating layer 3 is cured, and the heat conductor 2, the first insulating layer 3, the second insulating layer 4, and the conductive layer 12 are buried. Inside the mold resin 13. At this time, it is preferable to embed the heat conductor 2, the first insulating layer 3, the second insulating layer 4, and the conductive layer 12 in the mold so as to expose a part of the conductive layer 12. Inside the resin 13. Moreover, after the heat conductor 2, the first insulating layer 3, the second insulating layer 4, and the conductive layer 12 are buried in the mold resin 13, the first and second insulating layers 3 and 4 may be cured. For example, when the mold resin 13 is cured, the first and second insulating layers 3 and 4 may be cured.

本發明之積層體較佳為用於獲得功率半導體模組用零件之積層體。又，上述積層體之用途並不限定於上述功率半導體模組用零件。亦可使用上述積層體，獲得例如經由第1、第2絕緣層將金屬體接著於雙面設置有銅電路之積層板或多層配線板、銅箔、銅板、半導體元件或半導體封裝等之各導電層上的各種電氮零件。上述積層體可較佳地用於將導熱體接著於在基板上安裝有半導體元件之半導體裝置之導電層上。進而，上述積層體亦可較佳地用於將導熱率為10 W/m．K以上之導熱體接著於在基板上搭載有半導體元件以外之電子零件元件之電子零件裝置之導電層上。 The laminate of the present invention is preferably a laminate for obtaining parts for a power semiconductor module. Further, the use of the above laminated body is not limited to the above-described components for a power semiconductor module. It is also possible to obtain, for example, a laminated board or a multilayer wiring board in which a metal body is provided with a copper circuit on both surfaces via a first and a second insulating layer, a copper foil, a copper plate, a semiconductor element, or a semiconductor package. Various electric nitrogen parts on the layer. The above laminated body can be preferably used for bonding a thermal conductor to a conductive layer of a semiconductor device on which a semiconductor element is mounted on a substrate. Further, the above laminated body can also be preferably used for a thermal conductivity of 10 W/m. The heat conductor of K or more is placed on the conductive layer of the electronic component device on which the electronic component other than the semiconductor element is mounted on the substrate.

上述導熱率為10 W/m．K以上之導熱體並無特別限定。作為上述導熱率為10 W/m．K以上之導熱體，例如可列舉：鋁、銅、氧化鋁、氧化鈹、碳化矽、氮化矽、氮化鋁及石墨片材等。其中，上述導熱率為10 W/m．K以上之導熱體較佳為銅或鋁。銅或鋁之散熱性優異。 The above thermal conductivity is 10 W/m. The heat conductor of K or more is not particularly limited. The above thermal conductivity is 10 W/m. Examples of the heat conductor of K or more include aluminum, copper, aluminum oxide, cerium oxide, tantalum carbide, tantalum nitride, aluminum nitride, and graphite sheets. Wherein, the above thermal conductivity is 10 W/m. The heat conductor of K or more is preferably copper or aluminum. Copper or aluminum is excellent in heat dissipation.

以下，藉由列舉本發明之具體之實施例及比較例而闡明本發明。再者，本發明並不限定於以下之實施例。 Hereinafter, the present invention will be clarified by enumerating specific examples and comparative examples of the invention. Furthermore, the invention is not limited to the following examples.

準備以下材料。 Prepare the following materials.

[硬化性化合物(A)] [Sclerosing compound (A)]

(1)雙酚A型液狀環氧樹脂(三菱化學公司製造之 「Epikote 828US」，Mw=370) (1) Bisphenol A type liquid epoxy resin (manufactured by Mitsubishi Chemical Corporation) "Epikote 828US", Mw=370)

(2)雙酚F型液狀環氧樹脂(三菱化學公司製造之「Epikote 806L」，Mw=370) (2) Bisphenol F type liquid epoxy resin ("Epikote 806L" manufactured by Mitsubishi Chemical Corporation, Mw=370)

(3)萘骨架液狀環氧樹脂(DIC公司製造之「EPICLON HP-4032D」，Mw=304) (3) Naphthalene skeleton liquid epoxy resin ("EPICLON HP-4032D" manufactured by DIC Corporation, Mw=304)

(4)聯苯骨架環氧樹脂(三菱化學公司製造之「Epikote YX4000」，Mw=368) (4) Biphenyl skeleton epoxy resin (Epikote YX4000, manufactured by Mitsubishi Chemical Corporation, Mw=368)

[聚合物] [polymer]

(1)雙酚A型苯氧基樹脂(三菱化學公司製造之「E1256」，Mw=51000) (1) Bisphenol A type phenoxy resin ("E1256" manufactured by Mitsubishi Chemical Corporation, Mw = 51000)

(2)聚苯乙烯(Toyo Styrene公司製造之「HRM26」，Mw=30萬) (2) Polystyrene ("HRM26" manufactured by Toyo Styrene, Mw = 300,000)

[硬化劑(B)] [hardener (B)]

(1)脂環式骨架酸酐(新日本理化公司製造之「MH-700」) (1) alicyclic skeleton anhydride ("MH-700" manufactured by Nippon Chemical and Chemical Co., Ltd.)

(2)聯苯骨架酚樹脂(明和化成公司製造之「MEH-7851-S」) (2) Biphenyl skeleton phenol resin ("MEH-7851-S" manufactured by Minghe Chemical Co., Ltd.)

(3)二胺基二苯基甲烷(熔點90℃) (3) Diaminodiphenylmethane (melting point 90 ° C)

(4)雙氰胺(熔點208℃) (4) dicyandiamide (melting point 208 ° C)

(5)異氰尿酸改性固體分散型咪唑(四國化成公司製造之「2MZA-PW」，熔點253℃) (5) Isocyanuric acid-modified solid dispersion type imidazole ("2MZA-PW" manufactured by Shikoku Chemicals Co., Ltd., melting point 253 ° C)

[無機填料(C)：導熱率為10 W/m．K以上] [Inorganic filler (C): thermal conductivity is 10 W/m. K or more]

(1)5 μm粉碎氧化鋁(粉碎填料，日本輕金屬公司製造之「LT300C」，平均粒徑5 μm，最大粒徑15 μm，導熱率36 W/m．K，新莫氏硬度12) (1) 5 μm pulverized alumina (pulverized filler, "LT300C" manufactured by Nippon Light Metal Co., Ltd., average particle size 5 μm, maximum particle size 15 μm, thermal conductivity 36 W/m. K, new Mohs hardness 12)

(2)2 μm粉碎氧化鋁(粉碎填料，日本輕金屬公司製造之「LS-242C」，平均粒徑2 μm，最大粒徑20 μm，導熱率36 W/m．K，新莫氏硬度12) (2) 2 μm pulverized alumina (pulverized filler, "LS-242C" manufactured by Nippon Light Metal Co., Ltd., average particle size 2 μm, maximum particle size 20 μm, thermal conductivity 36 W/m.K, new Mohs hardness 12)

(3)球狀氧化鋁(Denka公司製造之「DAM-10」，平均粒徑10 μm，最大粒徑30 μm，導熱率36 W/m．K，新莫氏硬度12) (3) Spherical alumina (DAM-10 manufactured by Denka Co., Ltd., average particle size 10 μm, maximum particle size 30 μm, thermal conductivity 36 W/m.K, new Mohs hardness 12)

(4)氮化鋁(Toyo Aluminium公司製造之「TOYALNITE-FLX」，平均粒徑14 μm，最大粒徑30 μm，導熱率200 W/m．K，新莫氏硬度11) (4) Aluminum nitride ("TOYALNITE-FLX" manufactured by Toyo Aluminium Co., Ltd., average particle size 14 μm, maximum particle size 30 μm, thermal conductivity 200 W/m.K, new Mohs hardness 11)

(5)晶質二氧化矽(龍森公司製造之「Crystalite CMC-12」，平均粒徑5 μm，最大粒徑20 μm，導熱率10 W/m．K，新莫氏硬度9) (5) Crystal cerium oxide (Crystalite CMC-12 manufactured by Ronsen Corporation, average particle size 5 μm, maximum particle size 20 μm, thermal conductivity 10 W/m.K, new Mohs hardness 9)

(6)板狀氮化硼(昭和電工公司製造之「UHP-1」，平均粒徑8 μm，最大粒徑50 μm，導熱率60 W/m．K，新莫氏硬度2) (6) Plate-shaped boron nitride ("UHP-1" manufactured by Showa Denko Co., Ltd., average particle size 8 μm, maximum particle size 50 μm, thermal conductivity 60 W/m.K, new Mohs hardness 2)

(7)氮化硼凝聚粒子(Momentive公司製造之「TPX25」，平均粒徑25 μm，最大粒徑100 μm，導熱率60 W/m．K，新莫氏硬度2) (7) Boron nitride agglomerated particles ("TPX25" manufactured by Momentive Co., Ltd., average particle size 25 μm, maximum particle diameter 100 μm, thermal conductivity 60 W/m.K, new Mohs hardness 2)

[無機填料(C)：導熱率未達10 W/m．K] [Inorganic filler (C): The thermal conductivity is less than 10 W/m. K]

(1)熔融二氧化矽(Tokuyama公司製造之「SE15」，平均粒徑15 μm，最大粒徑60 μm，導熱率2 W/m．K，新莫氏硬度7) (1) Melted cerium oxide ("SE15" manufactured by Tokuyama Co., Ltd., average particle size 15 μm, maximum particle size 60 μm, thermal conductivity 2 W/m.K, new Mohs hardness 7)

[阻燃劑] [Flame retardant]

(1)三苯基膦(TPP，triphenyl phosphine) (1) Triphenyl phosphine (TPP)

(2)磷酸三氯乙酯(TCEP，trichloroethyl phosphate) (2) Trichloroethyl phosphate (TCEP)

[添加劑] [additive]

(1)環氧矽烷偶合劑(信越化學工業公司製造之「KBE403」) (1) Epoxy decane coupling agent ("KBE403" manufactured by Shin-Etsu Chemical Co., Ltd.)

[溶劑] [solvent]

(1)甲基乙基酮 (1) methyl ethyl ketone

(實施例1) (Example 1)

使用勻相分散型攪拌機，以下述表1所示之比例(調配單位為重量份)調配各成分，並進行混練，製備用以形成第1絕緣層之第1硬化性組合物、及用以形成第2絕緣層之第2硬化性組合物。 Using a homogeneous dispersion type mixer, the components are blended in a ratio shown in the following Table 1 (parts by weight of the compounding unit), and kneaded to prepare a first curable composition for forming a first insulating layer, and to form The second curable composition of the second insulating layer.

將上述第1硬化性組合物塗佈於厚度50 μm之脫模PET片材上，於90℃之烘箱內乾燥30分鐘，於PET片材上製作厚度80 μm之第1絕緣層。又，將上述第2硬化性組合物塗佈於厚度50 μm之脫模PET片材上，於90℃之烘箱內乾燥30分鐘，於PET片材上製作厚度80 μm之第2絕緣層。 The first curable composition was applied onto a release PET sheet having a thickness of 50 μm, and dried in an oven at 90 ° C for 30 minutes to form a first insulating layer having a thickness of 80 μm on the PET sheet. Further, the second curable composition was applied onto a release PET sheet having a thickness of 50 μm, and dried in an oven at 90 ° C for 30 minutes to form a second insulating layer having a thickness of 80 μm on the PET sheet.

使用熱貼合機將所獲得之第1絕緣層貼合於厚度0.5 mm之銅板上後，於200℃下硬化1小時(第1硬化性組合物之硬化條件)。其後，使用熱貼合機將第2絕緣層貼合於第1絕緣層上後，於130℃下硬化3分鐘(第2硬化性組合物之硬化條件)，製作積層體。 The obtained first insulating layer was bonded to a copper plate having a thickness of 0.5 mm by a heat bonding machine, and then cured at 200 ° C for 1 hour (hardening conditions of the first curable composition). Thereafter, the second insulating layer was bonded to the first insulating layer by a heat bonding machine, and then cured at 130 ° C for 3 minutes (hardening conditions of the second curable composition) to prepare a laminate.

又，使用所獲得之積層體，一面以1 MPa之壓力將厚度35 μm之電解銅箔推壓至積層體之第2絕緣層側，一面於 200℃下加熱1小時，獲得積層構造體。 Further, using the obtained laminated body, the electrolytic copper foil having a thickness of 35 μm was pressed against the second insulating layer side of the laminated body while being pressed at a pressure of 1 MPa. The mixture was heated at 200 ° C for 1 hour to obtain a laminated structure.

(實施例2~54及比較例1~7) (Examples 2 to 54 and Comparative Examples 1 to 7)

除將第1、第2硬化性組合物所使用之各成分之種類及調配量、第1、第2硬化性組合物之硬化條件、第1、第2絕緣層之厚度、及獲得積層體時所使用之銅板之厚度設為如下述表1~12所示以外，以與實施例1同樣之方式製備第1、第2硬化性組合物，製作積層體及積層構造體。 The type and amount of each component used in the first and second curable compositions, the curing conditions of the first and second curable compositions, the thickness of the first and second insulating layers, and the time when the laminate is obtained The first and second curable compositions were prepared in the same manner as in Example 1 except that the thickness of the copper plate used was as shown in the following Tables 1 to 12, and a laminate and a laminated structure were produced.

(評價) (Evaluation)

(1)積層體中之作為硬化前之未硬化物或半硬化物之第2絕緣層於130℃下之黏度 (1) Viscosity of the second insulating layer in the laminate as an unhardened or semi-hardened layer before hardening at 130 ° C

將積層體之第2絕緣層加工成直徑2cm之圓板狀。使用旋轉型動態黏彈性測定裝置(Reologica Instruments公司製造之「VAR-100」)，藉由直徑2 cm之平行型板，於振盪應變控制模式、起始應力10 Pa、頻率1 Hz及應變1%之條件下，一面自23℃起以升溫速度8℃/分鐘之條件加熱，一面測定第2絕緣層於130℃下之黏度。 The second insulating layer of the laminate was processed into a disk shape having a diameter of 2 cm. Rotary dynamic viscoelasticity measuring device ("VAR-100" manufactured by Reologica Instruments), with a parallel plate of 2 cm in diameter, in the oscillation strain control mode, initial stress 10 Pa, frequency 1 Hz, and strain 1% Under the conditions, the viscosity of the second insulating layer at 130 ° C was measured while heating at 23 ° C for 8 ° C / min.

(2)導熱率 (2) Thermal conductivity

取出積層體之第1絕緣層及第2絕緣層。使用導熱率計(京都電子工業公司製造之「迅速導熱率計QTM-500」)，測定第1絕緣層之導熱率及第2絕緣層之導熱率。 The first insulating layer and the second insulating layer of the laminated body are taken out. The thermal conductivity of the first insulating layer and the thermal conductivity of the second insulating layer were measured using a thermal conductivity meter ("Quick Thermal Conductivity Meter QTM-500" manufactured by Kyoto Electronics Industry Co., Ltd.).

(3)導電層相對於作為硬化物之第2絕緣層之剝離強度 (3) Peel strength of the conductive layer with respect to the second insulating layer as a cured product

將所獲得之積層構造體之電解銅箔蝕刻為10 mm寬。其後，測定以90度之角度於50 mm/分鐘之拉伸速度下自第2絕緣層剝離電解銅箔時之剝離強度。 The electrolytic copper foil of the obtained laminated structure was etched to a width of 10 mm. Thereafter, the peel strength at the time of peeling the electrolytic copper foil from the second insulating layer at an elongation speed of 50 mm/min at an angle of 90 degrees was measured.

(4)第1絕緣層之熱線膨脹率 (4) Thermal expansion coefficient of the first insulating layer

將積層體中之第1絕緣層切割為3 mm×25 mm之大小。於第1絕緣層為硬化物之情形時，將該硬化物作為試樣。於第1絕緣層為半硬化物之情形時，使第1絕緣層於200℃之烘箱內硬化1小時，製成作為硬化物之試樣。使用TMA(Thermomechanical Analysis，熱機械分析)裝置(SII NanoTechnology公司製造之「TMA/SS7000」)，測定以10℃/分鐘之升溫速度將所獲得之試樣一次升溫至320℃後，冷卻至-45℃，繼而以10℃/分鐘自-45℃升溫至130℃時的溫度-TMA直線之斜率，算出其倒數作為-45~130℃下之熱線膨脹率。 The first insulating layer in the laminate was cut to a size of 3 mm × 25 mm. When the first insulating layer is a cured product, the cured product is used as a sample. When the first insulating layer is a semi-cured material, the first insulating layer is cured in an oven at 200 ° C for 1 hour to prepare a sample as a cured product. Using a TMA (Thermomechanical Analysis) apparatus ("TMA/SS7000" manufactured by SII NanoTechnology Co., Ltd.), the obtained sample was heated to 320 ° C at a temperature increase rate of 10 ° C / min, and then cooled to -45. °C, then the temperature at -10 °C from 10 °C / min to 130 °C - the slope of the TMA line, the reciprocal is calculated as the coefficient of thermal expansion at -45 ~ 130 °C.

(5)絕緣破壞電壓(耐電壓性) (5) Insulation breakdown voltage (withstand voltage)

取出積層體之第1、第2絕緣層。將第1、第2絕緣層切割為100 mm×100 mm之大小，獲得試樣。使所獲得之試樣於200℃之烘箱內硬化1小時，獲得作為硬化物之絕緣層。使用耐電壓試驗器(EXTECH Electronics公司製造之「MODEL7473」)，以電壓以1 kV/秒鐘之速度上升之方式於絕緣層間施加交流電壓。將絕緣層破壞之電壓設為絕緣破壞電壓。 The first and second insulating layers of the laminate are taken out. The first and second insulating layers were cut to a size of 100 mm × 100 mm to obtain a sample. The obtained sample was hardened in an oven at 200 ° C for 1 hour to obtain an insulating layer as a cured product. An AC voltage was applied between the insulating layers by using a withstand voltage tester ("MODEL7473" manufactured by EXTECH Electronics Co., Ltd.) at a voltage of 1 kV/sec. The voltage at which the insulating layer is broken is set as the dielectric breakdown voltage.

(6)積層體之翹曲 (6) Warpage of laminated body

將積層體加工成10 mm×500 mm之大小，使銅板側朝下而置於水平之台上，將積層體之上表面之高度之最大值與最小值之差設為積層體之翹曲而進行評價。藉由下述基準判定積層體之翹曲。 The laminated body is processed into a size of 10 mm × 500 mm, so that the copper plate is placed sideways on the horizontal table, and the difference between the maximum value and the minimum value of the height of the upper surface of the laminated body is set as the warpage of the laminated body. Conduct an evaluation. The warpage of the laminated body was determined by the following criteria.

[積層體之翹曲之判定基準] [Criteria for Judging the Warpage of Laminates]

○：翹曲未達0.1 mm ○: warpage is less than 0.1 mm

△：翹曲為0.1 mm以上且未達0.5 mm △: warpage is 0.1 mm or more and less than 0.5 mm

×：翹曲為0.5 mm以上 ×: Warpage is 0.5 mm or more

(7)絕緣層之儲存穩定性 (7) Storage stability of the insulating layer

將所獲得之積層構造體之電解銅箔蝕刻為10 mm寬。其後，將積層構造體放置於40℃之烘箱內一個月。繼而，測定以90度之角度於50 mm/分鐘之拉伸速度下自第2絕緣層剝離電解銅箔時之剝離強度。 The electrolytic copper foil of the obtained laminated structure was etched to a width of 10 mm. Thereafter, the laminated structure was placed in an oven at 40 ° C for one month. Then, the peel strength at the time of peeling the electrolytic copper foil from the second insulating layer at an elongation speed of 50 mm/min at an angle of 90 degrees was measured.

相對於上述(3)導電層相對於作為硬化物之第2絕緣層之剝離強度中之測定值(初始值)，評價於40℃下放置一個月後之剝離強度之測定值保持何種程度。利用下述基準判定絕緣層之儲存穩定性。 The measured value (initial value) of the peel strength of the (3) conductive layer with respect to the second insulating layer as the cured product was evaluated to what extent the measured value of the peel strength after standing at 40 ° C for one month was maintained. The storage stability of the insulating layer was judged by the following criteria.

[絕緣層之儲存穩定性之判定基準] [Criteria for determination of storage stability of insulating layer]

○：剝離強度為初始值之70%以上 ○: The peel strength is 70% or more of the initial value

△：剝離強度為初始值之50%以上且未達70% △: The peel strength is 50% or more of the initial value and less than 70%

×：剝離強度未達初始值之50% ×: The peel strength is less than 50% of the initial value

(8)加工性 (8) Processability

使用直徑2.0 mm之鑽頭(Union Tool公司製造之「RA系列」)，於旋轉數30000及平台傳送速度0.5 m/分鐘之條件下，對積層體進行雕銑加工。測定產生毛邊為止之加工距離。利用以下基準評價加工性。 Using a 2.0 mm diameter drill ("RA Series" manufactured by Union Tool), the laminate was subjected to engraving and milling at a rotation number of 30,000 and a platform transfer speed of 0.5 m/min. The processing distance until the burrs were generated was measured. The workability was evaluated by the following criteria.

[加工性之判定基準] [Criteria for the determination of processability]

○：可不產生毛邊地加工5 m以上 ○: 5 m or more can be processed without burrs

△：可不產生毛邊地加工1 m以上且未達5 m △: It can process 1 m or more and less than 5 m without generating burrs.

×：由未達1 m之加工而產生毛邊 ×: burrs caused by processing up to 1 m

(9)阻燃性 (9) Flame retardancy

使積層體於200℃之烘箱內硬化1小時。將硬化物之第1、第2絕緣層切割為13 cm×12.5 cm之大小，獲得試片。依據UL(Underwriters Laboratories，美國保險商實驗室)94標準，使燃氣器之火焰與以長度方向成為上下方向之方式垂直地保持之試片之下端接觸10秒，燃燒停止後，進而接觸火焰10秒鐘，並檢查試片之燃燒之程度。利用下述基準判定阻燃性。 The laminate was allowed to harden in an oven at 200 ° C for 1 hour. The first and second insulating layers of the cured product were cut into a size of 13 cm × 12.5 cm to obtain a test piece. According to the UL (Underwriters Laboratories) 94 standard, the flame of the gas burner is brought into contact with the lower end of the test piece which is vertically maintained in the longitudinal direction for 10 seconds, and after the combustion is stopped, the flame 10 is further contacted. Seconds, and check the extent of burning of the test piece. The flame retardancy was determined by the following criteria.

[阻燃性之判定基準] [Criteria for determination of flame retardancy]

○○：試片長度之未達5%燃燒 ○○: The length of the test piece is less than 5% burning

○：試片長度之5%以上且未達10%燃燒 ○: 5% or more of the length of the test piece and less than 10% burning

△：試片長度之10%以上且未達50%燃燒 △: 10% or more of the length of the test piece and less than 50% burning

×：試片長度之50%以上燃燒 ×: 50% or more of the length of the test piece burns

(10)散熱性 (10) Heat dissipation

使積層體於200℃之烘箱內硬化1小時。以196 N/cm2之壓力自作為硬化物之第2絕緣層側將硬化後之積層體推壓至相同尺寸之控制為60℃之表面平滑的發熱體。藉由熱電偶測定銅板之表面之溫度。利用下述基準判定散熱性。 The laminate was allowed to harden in an oven at 200 ° C for 1 hour. The layered body after hardening was pressed from the side of the second insulating layer as the cured product to a heat generating body having a surface smoothness controlled at 60 ° C under the same pressure of 196 N/cm 2 . The temperature of the surface of the copper plate was measured by a thermocouple. The heat dissipation was determined by the following criteria.

[散熱性之判定基準] [Judgement for heat dissipation]

○：發熱體與銅板之表面之溫度差超過3℃且為6℃以下 ○: The temperature difference between the surface of the heating element and the copper plate exceeds 3 ° C and is less than 6 ° C

△：發熱體與銅板之表面之溫度差超過6℃且為10℃以下 △: The temperature difference between the surface of the heating element and the copper plate exceeds 6 ° C and is less than 10 ° C

×：發熱體與銅板之表面之溫度差超過10℃ ×: The temperature difference between the surface of the heating element and the copper plate exceeds 10 °C

將調配成分及結果示於下述表1~12中。再者，於下述表7~12中，*1表示第1絕緣層或第2絕緣層中之「粉碎填料與球狀填料之合計之含量：板狀填料之含量」。*2表示第1絕緣層中之硬化性化合物(A)100重量%中之具有多環式芳香族骨架之硬化性化合物之含量(重量%)。又，於下述表7~12中，於所使用之銅板之厚度之欄內標註「○」。 The blending ingredients and results are shown in Tables 1 to 12 below. In the following Tables 7 to 12, *1 indicates "the total content of the pulverized filler and the spherical filler in the first insulating layer or the second insulating layer: the content of the platy filler". *2 represents the content (% by weight) of the curable compound having a polycyclic aromatic skeleton in 100% by weight of the curable compound (A) in the first insulating layer. Further, in the following Tables 7 to 12, "○" is indicated in the column of the thickness of the copper plate to be used.

1‧‧‧積層體 1‧‧ ‧ laminated body

2‧‧‧導熱體 2‧‧‧ Thermal Conductor

3‧‧‧第1絕緣層 3‧‧‧1st insulation layer

4‧‧‧第2絕緣層 4‧‧‧2nd insulation layer

11‧‧‧功率半導體模組用零件 11‧‧‧Power semiconductor module parts

12‧‧‧導電層 12‧‧‧ Conductive layer

13‧‧‧模具樹脂 13‧‧‧Mold resin

圖1係示意性地表示本發明之一實施形態之積層體的剖面圖。 Fig. 1 is a cross-sectional view schematically showing a laminated body according to an embodiment of the present invention.

圖2係示意性地表示藉由本發明之一實施形態之功率半導體模組用零件之製造方法而獲得之功率半導體模組用零件的剖面圖。 FIG. 2 is a cross-sectional view schematically showing a component for a power semiconductor module obtained by a method of manufacturing a component for a power semiconductor module according to an embodiment of the present invention.

1‧‧‧積層體 1‧‧ ‧ laminated body

2‧‧‧導熱體 2‧‧‧ Thermal Conductor

3‧‧‧第1絕緣層 3‧‧‧1st insulation layer

4‧‧‧第2絕緣層 4‧‧‧2nd insulation layer

Claims (19)

一種積層體，其包括：導熱體，其導熱率為10 W/m．K以上；第1絕緣層，其積層於上述導熱體之表面且為半硬化物或硬化物；及第2絕緣層，其積層於上述第1絕緣層之與上述導熱體側相反之表面且為未硬化物或半硬化物；上述第1絕緣層以86重量%以上且未達97重量%含有導熱率為10 W/m．K以上之無機填料，且上述第2絕緣層以67重量%以上且未達95重量%含有無機填料；上述第1絕緣層之硬化率為50%以上，上述第2絕緣層之硬化率未達80%，且上述第1絕緣層之硬化率大於上述第2絕緣層之硬化率。 A laminate comprising: a thermal conductor having a thermal conductivity of 10 W/m. K or more; the first insulating layer is laminated on the surface of the heat conductor and is a semi-cured material or a cured product; and the second insulating layer is laminated on a surface of the first insulating layer opposite to the heat conductor side and is An uncured or semi-hardened material; the first insulating layer has a thermal conductivity of 10 W/m in an amount of 86% by weight or more and less than 97% by weight. The inorganic filler of K or more, wherein the second insulating layer contains an inorganic filler in an amount of 67% by weight or more and less than 95% by weight; the curing rate of the first insulating layer is 50% or more, and the curing rate of the second insulating layer is less than 80%, and the curing rate of the first insulating layer is larger than the curing rate of the second insulating layer. 如請求項1之積層體，其中上述第1絕緣層100重量%中之上述無機填料之含量多於上述第2層100重量%中之上述無機填料之含量。 The laminate according to claim 1, wherein the content of the inorganic filler in 100% by weight of the first insulating layer is more than the content of the inorganic filler in 100% by weight of the second layer. 如請求項1之積層體，其用於獲得功率半導體模組用零件。 The laminate of claim 1 is for obtaining a component for a power semiconductor module. 如請求項1之積層體，其中上述第1絕緣層100重量%中之上述無機填料之含量多於上述第2層100重量%中之上述無機填料之含量；且其係用於獲得功率半導體模組用零件之積層體。 The laminate according to claim 1, wherein the content of the inorganic filler in 100% by weight of the first insulating layer is greater than the content of the inorganic filler in 100% by weight of the second layer; and the system is used for obtaining a power semiconductor mold. A layered body of parts. 如請求項1至4中任一項之積層體，其中於上述第1絕緣層為硬化物之情形時，作為硬化物之上述第1絕緣層之 熱線膨脹率為20 ppm/℃以下；於上述第1絕緣層為半硬化物之情形時，作為硬化後之硬化物之上述第1絕緣層之熱線膨脹率為20 ppm/℃以下。 The laminated body according to any one of claims 1 to 4, wherein, in the case where the first insulating layer is a cured product, the first insulating layer as a cured product The coefficient of thermal expansion is 20 ppm/° C. or less. When the first insulating layer is a semi-cured material, the thermal expansion coefficient of the first insulating layer as a cured product after curing is 20 ppm/° C. or less. 如請求項1至4中任一項之積層體，其中上述第2絕緣層於130℃下之黏度為1000 Pa．s以上且20000 Pa．s以下。 The laminate according to any one of claims 1 to 4, wherein the viscosity of the second insulating layer at 130 ° C is 1000 Pa. s above and 20000 Pa. s below. 如請求項1至4中任一項之積層體，其中上述第2絕緣層之厚度相對於上述第1絕緣層之厚度之比為0.3以上且1以下。 The laminate according to any one of claims 1 to 4, wherein a ratio of a thickness of the second insulating layer to a thickness of the first insulating layer is 0.3 or more and 1 or less. 如請求項1至4中任一項之積層體，其中上述第1絕緣層所含之上述無機填料之最大粒徑為50 μm以下，並且上述第2絕緣層所含之上述無機填料之最大粒徑為50 μm以下。 The laminate according to any one of claims 1 to 4, wherein a maximum particle diameter of the inorganic filler contained in the first insulating layer is 50 μm or less, and a maximum particle size of the inorganic filler contained in the second insulating layer The diameter is 50 μm or less. 如請求項1至4中任一項之積層體，其中上述第1絕緣層所含之上述無機填料為選自由氧化鋁、晶質二氧化矽、氮化硼及氮化鋁所組成之群中之至少一種。 The laminate according to any one of claims 1 to 4, wherein the inorganic filler contained in the first insulating layer is selected from the group consisting of alumina, crystalline ceria, boron nitride, and aluminum nitride. At least one of them. 如請求項1至4中任一項之積層體，其中上述第1絕緣層所含之上述無機填料、及上述第2絕緣層所含之上述無機填料分別為選自由氧化鋁、晶質二氧化矽、氮化硼及氮化鋁所組成之群中之至少一種。 The laminate according to any one of claims 1 to 4, wherein the inorganic filler contained in the first insulating layer and the inorganic filler contained in the second insulating layer are each selected from the group consisting of alumina and crystal dioxide. At least one of the group consisting of bismuth, boron nitride, and aluminum nitride. 如請求項1至4中任一項之積層體，其中上述第1絕緣層所含之上述無機填料為選自由氧化鋁、晶質二氧化矽及氮化硼所組成之群中之至少一種。 The laminate according to any one of claims 1 to 4, wherein the inorganic filler contained in the first insulating layer is at least one selected from the group consisting of alumina, crystalline ceria, and boron nitride. 如請求項1至4中任一項之積層體，其中上述第1絕緣層 係使用具有環狀醚基之硬化性化合物與硬化劑而形成。 The laminate according to any one of claims 1 to 4, wherein the first insulating layer It is formed using a hardening compound having a cyclic ether group and a curing agent. 如請求項12之積層體，其中上述第1絕緣層所使用之硬化劑係熔點為180℃以上之胺硬化劑。 The laminate according to claim 12, wherein the curing agent used in the first insulating layer is an amine curing agent having a melting point of 180 ° C or higher. 如請求項12或13之積層體，其中上述第1絕緣層所使用之上述具有環狀醚基之硬化性化合物包含具有環狀醚基及多環式芳香族骨架之硬化性化合物。 The laminate according to claim 12 or 13, wherein the curable compound having a cyclic ether group used in the first insulating layer contains a curable compound having a cyclic ether group and a polycyclic aromatic skeleton. 如請求項14之積層體，其中上述多環式芳香族骨架為聯苯骨架。 The laminate according to claim 14, wherein the polycyclic aromatic skeleton is a biphenyl skeleton. 如請求項1至4中任一項之積層體，其中上述第2絕緣層係使用具有環狀醚基之硬化性化合物與硬化劑而形成。 The laminate according to any one of claims 1 to 4, wherein the second insulating layer is formed using a curable compound having a cyclic ether group and a curing agent. 如請求項16之積層體，其中上述第2絕緣層所使用之硬化劑係熔點為180℃以上之胺硬化劑。 The laminate according to claim 16, wherein the curing agent used in the second insulating layer is an amine curing agent having a melting point of 180 ° C or higher. 如請求項1至4中任一項之積層體，其中上述導熱體之厚度為100 μm以上且1 mm以下。 The laminate according to any one of claims 1 to 4, wherein the thickness of the heat conductor is 100 μm or more and 1 mm or less. 一種功率半導體模組用零件之製造方法，其包括如下步驟：使用如請求項1至18中任一項之積層體，將導電層積層於上述積層體中之上述第2絕緣層之與上述第1絕緣層側相反之表面；使上述第2絕緣層硬化，並且於上述第1絕緣層為半硬化物之情形時，使上述第1絕緣層硬化；將上述導熱體、上述第1絕緣層、上述第2絕緣層及上述導電層埋入模具樹脂內。 A method of manufacturing a component for a power semiconductor module, comprising the steps of: using the laminate according to any one of claims 1 to 18, depositing a conductive layer on the second insulating layer in the laminate; a surface opposite to the side of the insulating layer; curing the second insulating layer, and curing the first insulating layer when the first insulating layer is a semi-cured material; and the heat conductor, the first insulating layer, The second insulating layer and the conductive layer are embedded in a mold resin.
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