JP5047024B2 - Thermally conductive resin composition, thermally conductive resin sheet, and power module - Google Patents
Thermally conductive resin composition, thermally conductive resin sheet, and power module Download PDFInfo
- Publication number
- JP5047024B2 JP5047024B2 JP2008078715A JP2008078715A JP5047024B2 JP 5047024 B2 JP5047024 B2 JP 5047024B2 JP 2008078715 A JP2008078715 A JP 2008078715A JP 2008078715 A JP2008078715 A JP 2008078715A JP 5047024 B2 JP5047024 B2 JP 5047024B2
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- Prior art keywords
- conductive resin
- heat
- formula
- thermally conductive
- heat conductive
- Prior art date
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- 229920005989 resin Polymers 0.000 title claims description 121
- 239000011347 resin Substances 0.000 title claims description 121
- 239000011342 resin composition Substances 0.000 title claims description 31
- 239000011159 matrix material Substances 0.000 claims description 41
- 229920000647 polyepoxide Polymers 0.000 claims description 34
- 239000003822 epoxy resin Substances 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000945 filler Substances 0.000 claims description 22
- 230000017525 heat dissipation Effects 0.000 claims description 12
- 239000007822 coupling agent Substances 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 7
- 125000003700 epoxy group Chemical group 0.000 claims description 7
- 125000001624 naphthyl group Chemical group 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 239000004848 polyfunctional curative Substances 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 21
- 238000010521 absorption reaction Methods 0.000 description 15
- 230000009477 glass transition Effects 0.000 description 14
- 238000002156 mixing Methods 0.000 description 13
- 238000010292 electrical insulation Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 125000003277 amino group Chemical group 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 230000008961 swelling Effects 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- -1 tributylphosphine Phosphine compounds Chemical class 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000013329 compounding Methods 0.000 description 3
- 238000007606 doctor blade method Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 2
- 0 CC1(*CC2OC2)c(cccc2)c2C=CC=C1 Chemical compound CC1(*CC2OC2)c(cccc2)c2C=CC=C1 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- NHGXDBSUJJNIRV-UHFFFAOYSA-M tetrabutylammonium chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CCCC NHGXDBSUJJNIRV-UHFFFAOYSA-M 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- RECCURWJDVZHIH-UHFFFAOYSA-N (4-chlorophenyl)urea Chemical class NC(=O)NC1=CC=C(Cl)C=C1 RECCURWJDVZHIH-UHFFFAOYSA-N 0.000 description 1
- QTERLAXNZRFFMZ-UHFFFAOYSA-N 1,1-dimethyl-3-(4-methylphenyl)urea Chemical compound CN(C)C(=O)NC1=CC=C(C)C=C1 QTERLAXNZRFFMZ-UHFFFAOYSA-N 0.000 description 1
- YBBLOADPFWKNGS-UHFFFAOYSA-N 1,1-dimethylurea Chemical compound CN(C)C(N)=O YBBLOADPFWKNGS-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- XUYAAIUFZVWSSJ-UHFFFAOYSA-N 1-chloro-1-phenylurea Chemical compound NC(=O)N(Cl)C1=CC=CC=C1 XUYAAIUFZVWSSJ-UHFFFAOYSA-N 0.000 description 1
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- XMTQQYYKAHVGBJ-UHFFFAOYSA-N 3-(3,4-DICHLOROPHENYL)-1,1-DIMETHYLUREA Chemical compound CN(C)C(=O)NC1=CC=C(Cl)C(Cl)=C1 XMTQQYYKAHVGBJ-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- FVCSARBUZVPSQF-UHFFFAOYSA-N 5-(2,4-dioxooxolan-3-yl)-7-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C(C(OC2=O)=O)C2C(C)=CC1C1C(=O)COC1=O FVCSARBUZVPSQF-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RTJWCOIBFLXONL-UHFFFAOYSA-N CC(C)c1ccccc1OCC1OC1 Chemical compound CC(C)c1ccccc1OCC1OC1 RTJWCOIBFLXONL-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- KXHPPCXNWTUNSB-UHFFFAOYSA-M benzyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC1=CC=CC=C1 KXHPPCXNWTUNSB-UHFFFAOYSA-M 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 150000003983 crown ethers Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- JHYNXXDQQHTCHJ-UHFFFAOYSA-M ethyl(triphenyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CC)C1=CC=CC=C1 JHYNXXDQQHTCHJ-UHFFFAOYSA-M 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- XXOYNJXVWVNOOJ-UHFFFAOYSA-N fenuron Chemical compound CN(C)C(=O)NC1=CC=CC=C1 XXOYNJXVWVNOOJ-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical class OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- ZGJADVGJIVEEGF-UHFFFAOYSA-M potassium;phenoxide Chemical compound [K+].[O-]C1=CC=CC=C1 ZGJADVGJIVEEGF-UHFFFAOYSA-M 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 1
- YMBCJWGVCUEGHA-UHFFFAOYSA-M tetraethylammonium chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC YMBCJWGVCUEGHA-UHFFFAOYSA-M 0.000 description 1
- SYZCZDCAEVUSPM-UHFFFAOYSA-M tetrahexylazanium;bromide Chemical compound [Br-].CCCCCC[N+](CCCCCC)(CCCCCC)CCCCCC SYZCZDCAEVUSPM-UHFFFAOYSA-M 0.000 description 1
- FBEVECUEMUUFKM-UHFFFAOYSA-M tetrapropylazanium;chloride Chemical compound [Cl-].CCC[N+](CCC)(CCC)CCC FBEVECUEMUUFKM-UHFFFAOYSA-M 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
本発明は、電気・電子機器等の発熱体から放熱部材へ熱を伝達させるのに用いる熱伝導性樹脂シートを与える熱伝導性樹脂組成物に関し、特に電力半導体素子等の発熱体からの熱を放熱部材に伝達し、且つ絶縁層としても機能する熱伝導性樹脂層(特に、熱伝導性樹脂シート)を与える熱伝導性樹脂組成物に関する。さらに、本発明は、この熱伝導性樹脂組成物を用いた熱伝導性樹脂シート及びパワーモジュールに関する。 The present invention relates to a thermally conductive resin composition that provides a thermally conductive resin sheet used to transfer heat from a heating element such as an electric / electronic device to a heat radiating member, and in particular, heat from a heating element such as a power semiconductor element. The present invention relates to a heat conductive resin composition that provides a heat conductive resin layer (particularly a heat conductive resin sheet) that transmits to a heat dissipation member and also functions as an insulating layer. Furthermore, this invention relates to the heat conductive resin sheet and power module which used this heat conductive resin composition.
電気・電子機器の発熱体から放熱部材へ熱を伝達させる熱伝導性樹脂層には、高い熱伝導性、絶縁性及び接着性が要求される。このような要求を満たす熱伝導性樹脂層として、無機充填材を含む熱硬化性樹脂組成物から形成された樹脂シートや塗布膜等が広く用いられている。例えば、パワーモジュールにおいては、電力半導体素子を搭載したリードフレームの裏面と放熱部材となる金属板との間に設ける熱伝導性樹脂層として、無機充填材を含む熱伝導性樹脂組成物を用いて塗布膜を形成することが知られている(例えば、特許文献1参照)。また、CPU等の発熱性電子部品と放熱フィンとの間に、高熱伝導性の無機充填材を含む熱伝導性樹脂組成物を用いて形成した熱伝導性樹脂シートを設けることが知られている(例えば、特許文献2及び3参照)。
High heat conductivity, insulation, and adhesiveness are required for the heat conductive resin layer that transfers heat from the heating element of the electric / electronic device to the heat dissipation member. As a heat conductive resin layer satisfying such requirements, resin sheets and coating films formed from a thermosetting resin composition containing an inorganic filler are widely used. For example, in a power module, a thermally conductive resin composition containing an inorganic filler is used as a thermally conductive resin layer provided between the back surface of a lead frame on which a power semiconductor element is mounted and a metal plate serving as a heat dissipation member. It is known to form a coating film (for example, see Patent Document 1). It is also known to provide a heat conductive resin sheet formed using a heat conductive resin composition containing a highly heat conductive inorganic filler between a heat generating electronic component such as a CPU and a heat radiating fin. (For example, refer to
上述の熱伝導性樹脂組成物に用いられる樹脂としては、プリント配線基板に用いられる樹脂と同様の樹脂が用いられることが多い。かかる樹脂としては、例えば、ビスフェノール型やビフェニル型エポキシ樹脂、トリフェニルメタン型エポキシ樹脂、グリシジルアミン型エポキシ樹脂、脂環脂肪族エポキシ樹脂、トリグリシジルイソシアネート等の複素環式エポキシ樹脂が挙げられる。また、硬化剤としては、ジアミノジフェニルスルフォン、ジシアンジアミドが一般的に用いられている。 As the resin used in the above-described heat conductive resin composition, the same resin as that used in the printed wiring board is often used. Examples of such resins include heterocyclic epoxy resins such as bisphenol-type and biphenyl-type epoxy resins, triphenylmethane-type epoxy resins, glycidylamine-type epoxy resins, alicyclic aliphatic epoxy resins, and triglycidyl isocyanate. Further, diaminodiphenylsulfone and dicyandiamide are generally used as the curing agent.
パワーモジュールの製造では、リード上にチップ等の電子部品を接合したり、パワーモジュール自体のリードを回路基板上に搭載する際に、高温のリフロー炉による半田付けが一般的に行われているが、この半田付け工程における熱履歴によってリード等の金属部分と熱伝導性樹脂層との界面で応力が発生する。また、熱衝撃が繰り返されるような環境条件下でパワーモジュールが用いられる場合にも、リード等の金属部分と熱伝導性樹脂層との界面で応力が発生する。かかる応力が発生した場合、熱伝導性樹脂層にクラックや剥離が生じたり、熱伝導性樹脂層自体の分解によってボイドが発生したりすることがある。その結果、熱伝導性樹脂層の電気絶縁性、機械的強度又は熱伝導性が低下するという問題があった。
特に、上述の特許文献に開示された熱伝導性樹脂層(樹脂シートや塗布膜)のマトリックス樹脂は、接着性が高く吸湿特性が良好であっても、ガラス転移温度が低くて耐熱性が悪いか、又はガラス転移温度が高くて耐熱性が良好であっても、脆弱で吸湿特性が悪く、長期信頼性が確保できないという問題があった。
In the manufacture of power modules, soldering using a high-temperature reflow furnace is generally performed when electronic components such as chips are joined on the leads or when the leads of the power module itself are mounted on the circuit board. Due to the thermal history in the soldering process, stress is generated at the interface between the metal part such as the lead and the thermally conductive resin layer. Also, when the power module is used under environmental conditions in which thermal shock is repeated, stress is generated at the interface between a metal part such as a lead and the thermally conductive resin layer. When such stress occurs, cracks or peeling may occur in the thermally conductive resin layer, or voids may occur due to decomposition of the thermally conductive resin layer itself. As a result, there has been a problem that the electrical insulation, mechanical strength, or thermal conductivity of the thermally conductive resin layer is lowered.
In particular, the matrix resin of the thermally conductive resin layer (resin sheet or coating film) disclosed in the above-mentioned patent document has a low glass transition temperature and poor heat resistance even if it has high adhesion and good moisture absorption characteristics. Even if the glass transition temperature is high and the heat resistance is good, there is a problem that it is brittle and has poor moisture absorption characteristics, and long-term reliability cannot be ensured.
本発明は、上記のような問題を解決するためになされたものであり、耐熱性、接着性及び吸湿特性に優れ、リフロー工程や高温多湿の条件下に曝されても良好な熱伝導性及び電気絶縁性を維持し得る熱伝導性樹脂層を与える熱伝導性樹脂組成物を提供することを目的とする。
また、本発明は、耐熱性、接着性及び吸湿特性に優れ、リフロー工程や高温多湿の条件下に曝されても良好な熱伝導性及び電気絶縁性を維持し得る熱伝導性樹脂シートを提供することを目的とする。
さらに、本発明は、放熱性及び電気絶縁性の長期信頼性に優れたパワーモジュールを提供することを目的とする。
The present invention has been made to solve the above-described problems, and is excellent in heat resistance, adhesiveness and moisture absorption characteristics, and has good thermal conductivity even when exposed to reflow processes and high temperature and high humidity conditions. It aims at providing the heat conductive resin composition which provides the heat conductive resin layer which can maintain electrical insulation.
The present invention also provides a heat conductive resin sheet that is excellent in heat resistance, adhesiveness and moisture absorption characteristics, and can maintain good heat conductivity and electrical insulation even when exposed to reflow processes and high temperature and high humidity conditions. The purpose is to do.
Furthermore, an object of this invention is to provide the power module excellent in long-term reliability of heat dissipation and electrical insulation.
本発明者等は上記のような問題を解決すべく鋭意研究した結果、トリアジン骨格とフェノール骨格とを有する所定の化合物からなる硬化剤をマトリックス樹脂成分として用いることで、硬化反応の際に分子内のフェノール性水酸基及びアミノ基によって高架橋密度化が達成され、また、この硬化剤を所定のナフタレン骨格を有するエポキシ樹脂を組み合わせて用いることで、嵩高いトリアジン骨格及びナフタレン骨格によって分子運動が抑制され、マトリックス樹脂の高ガラス転移温度化と低吸湿性とを両立させ得ることを見出した。さらに、無機充填材の含有量を所定の範囲とすることで、高い熱伝導性が確保されることを見出した。
すなわち、本発明は、マトリックス樹脂成分と絶縁性充填材とを含む熱伝導性樹脂組成物であって、前記マトリックス樹脂成分が、(A)トリアジン骨格とフェノール骨格とを有する所定の式で表され、且つ重量平均分子量が50,000以下の化合物からなる硬化剤、(B)所定の式で表されるナフタレン骨格を有し、且つ分子内にエポキシ基を2〜5個もつエポキシ樹脂、(C)硬化促進剤、及び(D)カップリング剤を含み、(E)所定の式で表される接着性付与剤を前記マトリックス樹脂成分中に5〜30質量%さらに含み、且つ前記絶縁性充填材の含有量が40〜90質量%であることを特徴とする熱伝導性樹脂組成物である。
As a result of diligent research to solve the above-mentioned problems, the present inventors have used a curing agent made of a predetermined compound having a triazine skeleton and a phenol skeleton as a matrix resin component. High crosslinking density is achieved by the phenolic hydroxyl group and amino group, and by using this curing agent in combination with an epoxy resin having a predetermined naphthalene skeleton, molecular motion is suppressed by the bulky triazine skeleton and naphthalene skeleton, It has been found that a high glass transition temperature and low hygroscopicity of the matrix resin can be achieved at the same time. Furthermore, it discovered that high heat conductivity was ensured by making content of an inorganic filler into a predetermined range.
Table Namely, the present invention provides a thermally conductive resin composition comprising a matrix resin component insulating filling material, wherein the matrix resin component, a predetermined formula which have a (A) a triazine skeleton and a phenol skeleton A curing agent comprising a compound having a weight average molecular weight of 50,000 or less, (B) an epoxy resin having a naphthalene skeleton represented by a predetermined formula and having 2 to 5 epoxy groups in the molecule; C) a curing accelerator and (D) a coupling agent, (E) an adhesiveness-imparting agent represented by a predetermined formula is further contained in the matrix resin component in an amount of 5 to 30% by mass, and the insulating filling Content of material is 40-90 mass%, It is a heat conductive resin composition characterized by the above-mentioned.
また、本発明は、マトリックス樹脂中に絶縁性充填材が分散された熱伝導性樹脂シートであって、前記マトリックス樹脂が、(A)トリアジン骨格とフェノール骨格とを有する所定の式で表され、且つ重量平均分子量が50,000以下の化合物からなる硬化剤、(B)所定の式で表されるナフタレン骨格を有し、且つ分子内にエポキシ基を2〜5個もつエポキシ樹脂、(C)硬化促進剤、及び(D)カップリング剤を含み、(E)所定の式で表される接着性付与剤を前記マトリックス樹脂中に5〜30質量%さらに含み、且つ前記絶縁性充填材の含有量が40〜90質量%であることを特徴とする熱伝導性樹脂シートである。 Also, the present invention provides a heat conductive resin sheet insulating filling material is dispersed in the matrix resin, the matrix resin, the table in a predetermined equation to have a (A) a triazine skeleton and a phenol skeleton A curing agent comprising a compound having a weight average molecular weight of 50,000 or less, (B) an epoxy resin having a naphthalene skeleton represented by a predetermined formula and having 2 to 5 epoxy groups in the molecule; C) a curing accelerator, and (D) a coupling agent, (E) an adhesiveness-imparting agent represented by a predetermined formula is further contained in the matrix resin in an amount of 5 to 30% by mass, and the insulating filler. Is a heat conductive resin sheet characterized by being 40-90 mass%.
さらに、本発明は、一方の放熱部材に搭載された電力半導体素子と、前記電力半導体素子で発生する熱を外部に放熱する他方の放熱部材と、前記電力半導体素子で発生する熱を前記一方の放熱部材から前記他方の放熱部材に伝達する、上記熱伝導性樹脂シートとを備えることを特徴とするパワーモジュールである。 Et al is, the present invention includes a power semiconductor element mounted on one of the heat radiating member, and the other of the heat radiation member for radiating the heat generated by the power semiconductor element to the outside, the heat generated by the power semiconductor element and the A power module comprising: the heat conductive resin sheet that transmits from one heat radiating member to the other heat radiating member.
本発明によれば、耐熱性、接着性及び吸湿特性に優れ、リフロー工程や高温多湿の条件下に曝されても良好な熱伝導性及び電気絶縁性を維持し得る熱伝導性樹脂層を与える熱伝導性樹脂組成物を提供することができる。 According to the present invention, a heat conductive resin layer having excellent heat resistance, adhesiveness and moisture absorption characteristics and capable of maintaining good thermal conductivity and electrical insulation even when exposed to reflow processes and high temperature and high humidity conditions is provided. A thermally conductive resin composition can be provided.
実施の形態1.
本発明の熱伝導性樹脂組成物は、マトリックス樹脂成分と絶縁性充填材とを含む。ここで、マトリックス樹脂成分は、(A)硬化剤、(B)エポキシ樹脂、(C)硬化促進剤、(D)カップリング剤及び(E)接着性付与剤を含む。
本発明で用いられる(A)硬化剤は、トリアジン骨格とフェノール骨格とを有する所定の式で表され、且つ重量平均分子量が50,000以下の化合物である。重量平均分子量が50,000を超えると、組成物の粘度が増加したり、ガラス転移温度が低下してしまうため好ましくない。
(A)硬化剤に用いられる化合物は、下記の式(2)で表される。
The heat conductive resin composition of the present invention includes a matrix resin component and an insulating filler. Here, the matrix resin component contains (A) a curing agent, (B) an epoxy resin , (C) a curing accelerator , (D) a coupling agent, and (E) an adhesion promoter.
(A) used in the present invention the curing agent is represented by the given formula which have a triazine skeleton and a phenol skeleton and a weight average molecular weight of 50,000 or less of the compound. When the weight average molecular weight exceeds 50,000, the viscosity of the composition increases and the glass transition temperature decreases, which is not preferable.
(A) compound used in the curing agent, Ru is the table by the following equation (2).
上記式(2)中、Zは水素又は炭素数5以下のアルキル基(例えば、CH3)であり、aは1〜20であり、bは1以上である。
(A)硬化剤は、分子内にアミノ基やフェノール性水酸基を有しているので、(B)エポキシ樹脂と効果的に反応することが可能であり、これにより高架橋密度化が達成される。
(A)硬化剤は、公知の方法により製造したものを用いればよいが、市販品を用いることもできる。市販品としては、EPICRON LA−7054(大日本インキ化学工業株式会社製)等が挙げられる。
In the above formula (2), Z is hydrogen or an alkyl group having 5 or less carbon atoms (for example, CH 3 ), a is 1 to 20, and b is 1 or more.
(A) Since the curing agent has an amino group or a phenolic hydroxyl group in the molecule, it can react effectively with (B) the epoxy resin, thereby achieving high crosslink density.
(A) What is necessary is just to use what was manufactured by the well-known method as a hardening | curing agent, but a commercial item can also be used. Examples of commercially available products include EPICRON LA-7054 (Dainippon Ink Chemical Co., Ltd.).
本発明で用いられる(B)エポキシ樹脂は、下記の式(1)で表されるナフタレン骨格を有し、且つ分子内にエポキシ基を2〜5個もつ。 The (B) epoxy resin used in the present invention has a naphthalene skeleton represented by the following formula (1), and has 2 to 5 epoxy groups in the molecule.
分子内にエポキシ基を3〜5個有する(B)エポキシ樹脂の例としては、以下のものが挙げられる。 The following are mentioned as an example of (B) epoxy resin which has 3-5 epoxy groups in a molecule | numerator.
上記のような構造を有する(B)エポキシ樹脂は、公知の方法により製造したものを用いればよいが、市販品を用いることもできる。市販品としては、EPICLON HP−4032、HP−4700及びHP−4770(大日本インキ化学工業株式会社製)等が挙げられる。
かかる(B)エポキシ樹脂は、硬化反応の際に(A)硬化剤のフェノール性水酸基及びアミノ基と効率良く反応し、高ガラス転移温度化と低吸湿性とを両立したマトリックス樹脂を与える。
(B)エポキシ樹脂と(A)硬化剤との割合は、(B)エポキシ樹脂中のエポキシ基と(A)硬化剤中のフェノール性水酸基及びアミノ基との割合が1:0.8〜1:1.3の範囲であることが好ましい。上記範囲を外れる場合には、所望のガラス転移温度が得られず、マトリックス樹脂の耐熱性が低くなることがある。
As the (B) epoxy resin having the structure as described above, a resin produced by a known method may be used, but a commercially available product may be used. Examples of commercially available products include EPICLON HP-4032, HP-4700, and HP-4770 (manufactured by Dainippon Ink & Chemicals, Inc.).
The (B) epoxy resin reacts efficiently with the phenolic hydroxyl group and amino group of the (A) curing agent during the curing reaction to give a matrix resin that achieves both high glass transition temperature and low moisture absorption.
The ratio of (B) epoxy resin to (A) curing agent is such that the ratio of epoxy group in (B) epoxy resin to phenolic hydroxyl group and amino group in (A) curing agent is 1: 0.8-1 Is preferably in the range of 1.3. When outside the above range, a desired glass transition temperature cannot be obtained, and the heat resistance of the matrix resin may be lowered.
本発明で用いられる(C)硬化促進剤としては、特に限定されることはなく、当該技術分野において公知のものを用いることができる。例えば、2−メチルイミダゾール、2−エチル−4−メチルイミダゾール、1−ベンジル−2−メチルイミダゾール、2−ヘプタデシルイミダゾール、2−ウンデシルイミダゾール等のイミダゾール化合物;トリフェニルホスフィン、トリブチルホスフィン等の有機ホスフィン化合物;トリメチルホスファイト、トリエチルホスファイト等の有機ホスファイト化合物;エチルトリフェニルホスホニウムブロミド、テトラフェニルホスホニウムテトラフェニルボレート等のホスホニウム塩;トリエチルアミン、トリブチルアミン等のトリアルキルアミン;4−ジメチルアミノピリジン、ベンジルジメチルアミン、2,4,6−トリス(ジメチルアミノメチル)フェノール、1,8−ジアザビシクロ(5,4,0)−ウンデセン−7(以下、DBUと略記する。)等のアミン化合物及びDBUとテレフタル酸や2,6−ナフタレンジカルボン酸との塩;テトラエチルアンモニウムクロリド、テトラプロピルアンモニウムクロリド、テトラブチルアンモニウムクロリド、テトラブチルアンモニウムブロミド、テトラヘキシルアンモニウムブロミド、ベンジルトリメチルアンモニウムクロリド等の第4級アンモニウム塩;3−フェニル−1,1−ジメチル尿素、3−(4−メチルフェニル)−1,1−ジメチル尿素、クロロフェニル尿素、3−(4−クロロフェニル)−1,1−ジメチル尿素、3−(3,4−ジクロルフェニル)−1,1−ジメチル尿素等の尿素化合物;水酸化ナトリウム、水酸化カリウム等のアルカリ;カリウムフェノキシドやカリウムアセテート等のクラウンエーテルの塩等を用いることができる。これらは、単独又は二種類以上を組み合わせて用いることができる。 The (C) curing accelerator used in the present invention is not particularly limited, and those known in the technical field can be used. For example, imidazole compounds such as 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 2-heptadecylimidazole and 2-undecylimidazole; organics such as triphenylphosphine and tributylphosphine Phosphine compounds; organic phosphite compounds such as trimethyl phosphite and triethyl phosphite; phosphonium salts such as ethyl triphenylphosphonium bromide and tetraphenylphosphonium tetraphenylborate; trialkylamines such as triethylamine and tributylamine; 4-dimethylaminopyridine; Benzyldimethylamine, 2,4,6-tris (dimethylaminomethyl) phenol, 1,8-diazabicyclo (5,4,0) -undecene-7 (hereinafter referred to as DB) And a salt of DBU with terephthalic acid or 2,6-naphthalenedicarboxylic acid; tetraethylammonium chloride, tetrapropylammonium chloride, tetrabutylammonium chloride, tetrabutylammonium bromide, tetrahexylammonium bromide, Quaternary ammonium salts such as benzyltrimethylammonium chloride; 3-phenyl-1,1-dimethylurea, 3- (4-methylphenyl) -1,1-dimethylurea, chlorophenylurea, 3- (4-chlorophenyl)- Urea compounds such as 1,1-dimethylurea and 3- (3,4-dichlorophenyl) -1,1-dimethylurea; alkalis such as sodium hydroxide and potassium hydroxide; crown ethers such as potassium phenoxide and potassium acetate It can be used salts. These can be used alone or in combination of two or more.
(C)硬化促進剤の配合量は、(B)エポキシ樹脂100質量部に対して、0.01〜5質量部であることが好ましい。硬化促進剤(C)の配合量が0.01質量部未満であると硬化反応速度が遅くなることがあり、5質量部より多いとエポキシ樹脂(B)の自己重合が生じてエポキシ樹脂(B)の硬化反応が阻害されることがある。 (C) It is preferable that the compounding quantity of a hardening accelerator is 0.01-5 mass parts with respect to 100 mass parts of (B) epoxy resins. If the blending amount of the curing accelerator (C) is less than 0.01 parts by mass, the curing reaction rate may be slow. ) May be inhibited.
マトリックス樹脂成分は、接着性を向上させる観点から、(D)カップリング剤及び(E)接着性付与剤をさらに含む。
(D)カップリング剤は、マトリックス樹脂と絶縁性充填材との界面の接着性や、熱伝導性樹脂層と接する部材との接着性を向上させる成分である。本発明で用いられる(D)カップリング剤としては、特に限定されることはなく、当該技術分野において公知のものを用いることができる。例えば、γ−グリシドキシプロピルトリメトキシシラン、N−β(アミノエチル)γ−アミノプロピルトリエトキシシラン、N−フェニル−γ−アミノプロピルトリメトキシシラン、γ−メルカプトプロピルトリメトキシシラン等を用いることができる。これらは、単独又は二種類以上を組み合わせて用いることができる。
マトリックス樹脂成分における(D)カップリング剤の配合量は、使用する他のマトリック樹脂成分やカップリング剤等の種類にあわせて適宜調整すればよいが、(B)エポキシ樹脂100質量部に対して、一般的に0.01〜5質量%であることが好ましい。
Matrix resin component, from the viewpoint of improving the adhesion, (D) a coupling agent and (E) further including a tackifier.
(D) A coupling agent is a component which improves the adhesiveness of the interface of a matrix resin and an insulating filler, and the adhesiveness with the member which contact | connects a heat conductive resin layer. The coupling agent (D) used in the present invention is not particularly limited, and those known in the technical field can be used. For example, use of γ-glycidoxypropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, etc. Can do. These can be used alone or in combination of two or more.
The blending amount of the (D) coupling agent in the matrix resin component may be appropriately adjusted according to the type of other matrix resin component or coupling agent to be used, but (B) with respect to 100 parts by mass of the epoxy resin. Generally, it is preferable that it is 0.01-5 mass%.
(E)接着性付与剤もまた、熱伝導性樹脂組成物から得られる熱伝導性樹脂層の接着性を向上させる成分である。本発明で用いられる(E)接着性付与剤は、下記の式(3)で表される熱可塑性樹脂である。 (E) The adhesion imparting agent is also a component that improves the adhesion of the heat conductive resin layer obtained from the heat conductive resin composition. The (E) adhesion imparting agent used in the present invention is a thermoplastic resin represented by the following formula (3).
上記式(3)中、YはCH2、C(CH3)2、SO2又は直接結合であり、cは30〜400である。また、この熱可塑性樹脂の重量平均分子量は、10,000〜100,000である。重量平均分子量が10,000未満であると、柔軟性が低くなり、接着対象物との界面で剥離やクラックが発生することがある。一方、重量平均分子量が100,000を超えると、所望のガラス転移温度が得られず、マトリックス樹脂の耐熱性が低くなることがある。
上記の熱可塑性樹脂は、公知の方法により製造したものを用いればよいが、市販品を用いることもできる。市販品としては、E1256B40(ジャパンエポキシレジン株式会社製)等が挙げられる。
マトリックス樹脂成分における(E)接着性付与剤の配合量は、5〜30質量%である。配合量が5質量%未満であると所望の接着性を有する熱伝導性樹脂層が得られないことがあり、30質量%より多いと熱伝導性樹脂層の耐熱性が低下することがある。
In the above formula (3), Y is CH 2, C (CH 3) 2, SO 2 or a direct bond, c is a 30 to 400. Moreover, the weight average molecular weight of this thermoplastic resin is 10,000-100,000. When the weight average molecular weight is less than 10,000, the flexibility becomes low, and peeling or cracking may occur at the interface with the object to be bonded. On the other hand, if the weight average molecular weight exceeds 100,000, the desired glass transition temperature cannot be obtained, and the heat resistance of the matrix resin may be lowered.
The thermoplastic resin may be one produced by a known method, but a commercially available product can also be used. As a commercial item, E1256B40 (made by Japan Epoxy Resin Co., Ltd.) etc. are mentioned.
The amount of (E) an adhesion promoter in the matrix resin component, Ru 5-30% by mass. When the blending amount is less than 5% by mass, a heat conductive resin layer having desired adhesion may not be obtained, and when it exceeds 30% by mass, the heat resistance of the heat conductive resin layer may be decreased.
マトリックス樹脂成分は、上記(B)エポキシ樹脂や(E)接着性付与剤以外のエポキシ樹脂をさらに含むことができ、この成分を配合することで熱伝導性樹脂層にしなやかさを付与することができる。このエポキシ樹脂としては、エピビス型のエポキシ樹脂(例えば、ビスフェノールA型エポキシ樹脂やビスフェノールF型エポキシ樹脂)が挙げられる。具体的には、このエポキシ樹脂は、下記の式(4)で表される。 The matrix resin component can further contain an epoxy resin other than the above (B) epoxy resin and (E) adhesion imparting agent, and blending this component can impart flexibility to the thermally conductive resin layer. it can. Examples of the epoxy resin include epibis type epoxy resins (for example, bisphenol A type epoxy resin and bisphenol F type epoxy resin). Specifically, this epoxy resin is represented by the following formula (4).
上記式(4)中、YはCH2、C(CH3)2、SO2又は直接結合であり、cは0〜5である。また、このエポキシ樹脂の重量平均分子量は、310〜2,000である。重量平均分子量が310未満であると、架橋密度が高くなり、シート材料が脆弱でクラックが発生しやすくなることがある。一方、重量平均分子量が2,000を超えると、組成物の粘度が高くなり、シート化することが困難になることがある。
上記のエポキシ樹脂は、公知の方法により製造したものを用いればよいが、市販品を用いることもできる。市販品としては、jER−828やjER−807(ジャパンエポキシレジン株式会社製)等が挙げられる。
なお、上記のエポキシ樹脂の配合量としては、本発明の効果を損なわない範囲であれば特に限定されることはなく、各成分にあわせて適宜調整すればよい。
In the formula (4), Y is CH 2, C (CH 3) 2, SO 2 or a direct bond, c is from 0 to 5. Moreover, the weight average molecular weight of this epoxy resin is 310-2,000. When the weight average molecular weight is less than 310, the crosslinking density increases, the sheet material is brittle, and cracks are likely to occur. On the other hand, when the weight average molecular weight exceeds 2,000, the viscosity of the composition increases and it may be difficult to form a sheet.
The epoxy resin may be one produced by a known method, but a commercially available product can also be used. Examples of commercially available products include jER-828 and jER-807 (manufactured by Japan Epoxy Resin Co., Ltd.).
The amount of the epoxy resin is not particularly limited as long as the effects of the present invention are not impaired, and may be appropriately adjusted according to each component.
本発明で用いられる絶縁性充填材としては、特に限定されることはなく、当該技術分野において公知のものを用いることができる。例えば、酸化アルミニウム(アルミナ)、酸化ケイ素(シリカ)、窒化ケイ素、窒化アルミニウム、炭化ケイ素、窒化ホウ素等を用いることができる。これらは、単独又は二種類以上を組み合わせて用いることができる。
絶縁性充填材の粒径及び形状は、特に限定されることはなく、熱伝導性樹脂層(樹脂シートや塗布膜)に一般的に配合されている粒径及び形状のものを用いればよい。具体的には、絶縁性充填材の形状は、略球形であることが好ましいが、粉砕されたような形状で多面形状、鱗片形状であってもよい。また、絶縁性充填材は、凝集したものや、顆粒状態のものを用いることができる。
熱伝導性樹脂組成物における絶縁性充填材の配合量は、40〜90質量%である。かかる範囲の配合量であれば、熱伝導性樹脂層において絶縁性充填材同士の接触により電熱路を確保して熱伝導性を高めることができる。配合量が40質量%未満であると、所望の熱伝導性を得ることができず、90質量%より多いとマトリックス樹脂中に絶縁性充填材を混合分散させることが困難となり、作業性や成形性に支障を生じる。
The insulating filler used in the present invention is not particularly limited, and those known in the technical field can be used. For example, aluminum oxide (alumina), silicon oxide (silica), silicon nitride, aluminum nitride, silicon carbide, boron nitride, or the like can be used. These can be used alone or in combination of two or more.
The particle size and shape of the insulating filler are not particularly limited, and those having a particle size and shape generally blended in the heat conductive resin layer (resin sheet or coating film) may be used. Specifically, the shape of the insulating filler is preferably substantially spherical, but may be a crushed shape such as a multi-faced shape or a scale shape. The insulating filler can be agglomerated or granular.
The compounding quantity of the insulating filler in a heat conductive resin composition is 40-90 mass%. If it is the compounding quantity of such a range, an electrical heating path can be ensured by contact between insulating fillers in a heat conductive resin layer, and heat conductivity can be improved. If the blending amount is less than 40% by mass, the desired thermal conductivity cannot be obtained, and if it exceeds 90% by mass, it becomes difficult to mix and disperse the insulating filler in the matrix resin. Impairs sex.
熱伝導性樹脂組成物は、マトリックス樹脂成分及び絶縁性充填材を均一に混合するために溶剤をさらに含むことができる。溶剤としては、当該技術分野において公知のものであれば特に限定されることはない。例えば、メチルエチルケトン、イソプロパノール、トルエン、エチルカルビトール、ブチルカルビトール及びブチルカルビトールアセテート等を用いることができる。
熱伝導性樹脂組成物における溶剤の配合量は、使用するマトリックス樹脂成分及び絶縁性充填材の種類にあわせて適宜調整すればよいが、一般的に、マトリックス樹脂成分及び絶縁性充填材の合計100質量部に対して、40質量部〜85質量部である。なお、熱硬化性樹脂組成物の粘度が低い場合には、溶剤を加えなくてもよい。
The thermally conductive resin composition may further include a solvent for uniformly mixing the matrix resin component and the insulating filler. The solvent is not particularly limited as long as it is known in the technical field. For example, methyl ethyl ketone, isopropanol, toluene, ethyl carbitol, butyl carbitol, butyl carbitol acetate and the like can be used.
The amount of the solvent in the thermally conductive resin composition may be appropriately adjusted according to the types of the matrix resin component and the insulating filler to be used. In general, the total of the matrix resin component and the insulating filler is 100. It is 40 mass parts-85 mass parts with respect to a mass part. In addition, when the viscosity of a thermosetting resin composition is low, it is not necessary to add a solvent.
熱伝導性樹脂組成物の調製方法は、特に限定されることはなく、当該技術分野において公知の方法を用いることができる。例えば、各成分を混合した後、3本ロールやニーダ等で混練すればよい。 The preparation method of a heat conductive resin composition is not specifically limited, A method well-known in the said technical field can be used. For example, after mixing each component, what is necessary is just to knead | mix with a 3 roll, a kneader.
実施の形態2.
本発明の熱伝導性樹脂シートは、マトリックス樹脂中に絶縁性充填材が分散されたシートである。
本発明の熱伝導性樹脂シートについて、図面を参照して説明する。図1は、本実施の形態における熱伝導性樹脂シートの断面模式図である。図1において、熱伝導性樹脂シート1は、マトリックス樹脂2と、このマトリックス樹脂2中に分散された絶縁性充填材3とから構成されている。ここで、マトリックス樹脂2は、必須成分として、上述の(A)硬化剤、(B)エポキシ樹脂、(C)硬化促進剤、(D)カップリング剤及び(E)接着性付与剤を含み、任意成分として、上述の(B)エポキシ樹脂及び(E)接着性付与剤以外のエポキシ樹脂を含むことができる。
The thermally conductive resin sheet of the present invention is a sheet in which an insulating filler is dispersed in a matrix resin.
The heat conductive resin sheet of this invention is demonstrated with reference to drawings. FIG. 1 is a schematic cross-sectional view of a thermally conductive resin sheet in the present embodiment. In FIG. 1, a heat
本発明の熱伝導性樹脂シートは、上述の熱伝導性樹脂組成物を用いて製造することができる。この熱伝導性樹脂シートの製造方法は、特に限定されることはなく、当該技術分野において公知の方法を用いることができる。例えば、離型処理がされたポリエチレンテレフタレート(PET)フィルムや金属板等の基材に、上述の熱伝導性樹脂組成物をドクターブレード法等によって塗布する。次いで、この塗布物を乾燥し、溶剤を揮発させた後、加熱することによって熱伝導性樹脂シートを得ることができる。ここで、乾燥の際には、必要に応じて80℃以上150℃以下に加熱し、溶剤の揮発を促進させてもよい。また、熱伝導性樹脂シートをパワーモジュール等に組み込む場合、発熱部材及び放熱部材との接着性等の観点から、マトリックス樹脂がBステージ化するまで加熱することが好ましい。さらに、加熱は、加圧しながら行ってもよく、加熱後に加圧処理を別途施してもよい。 The heat conductive resin sheet of this invention can be manufactured using the above-mentioned heat conductive resin composition. The manufacturing method of this heat conductive resin sheet is not specifically limited, A well-known method can be used in the said technical field. For example, the above-mentioned thermally conductive resin composition is applied to a base material such as a polyethylene terephthalate (PET) film or a metal plate that has been subjected to a release treatment by a doctor blade method or the like. Subsequently, after drying this application | coating material and volatilizing a solvent, a heat conductive resin sheet can be obtained by heating. Here, when drying, the solvent may be heated to 80 ° C. or more and 150 ° C. or less as necessary to promote the volatilization of the solvent. Moreover, when incorporating a heat conductive resin sheet in a power module etc., it is preferable to heat until matrix resin becomes B-stage from viewpoints, such as adhesiveness with a heat generating member and a heat radiating member. Furthermore, the heating may be performed while pressurizing, or a pressurizing process may be separately performed after the heating.
本発明の熱伝導性樹脂シートでは、耐熱性(ガラス転移温度)が高く、接着性及び吸湿特性に優れたマトリックス樹脂2を用いているので、リフロー工程や高温多湿の条件下に曝されても、リード等の金属部分と熱伝導性樹脂層との界面における応力の発生を防止することができる。また、絶縁性充填材3を高い充填率で配合しているので、良好な熱伝導性が確保される。よって、本発明の熱伝導性樹脂シートは、耐熱性、接着性及び吸湿特性に優れ、リフロー工程や高温多湿の条件下に曝されても良好な熱伝導性及び電気絶縁性を維持することができる。
In the heat conductive resin sheet of the present invention, since the
実施の形態3.
本発明のパワーモジュールは、一方の放熱部材に搭載された電力半導体素子と、前記電力半導体素子で発生する熱を外部に放熱する他方の放熱部材と、前記電力半導体素子で発生する熱を前記一方の放熱部材から前記他方の放熱部材に伝達する上記熱伝導性樹脂シートとを備えている。
図2は、本実施の形態におけるパワーモジュールの断面模式図である。図2において、パワーモジュール10は、配線及び放熱部材の両方の機能を有するリードフレーム11に搭載された電力半導体素子12と、放熱部材であるヒートシンク部材13と、リードフレーム11とヒートシンク部材13との間に配置された上述の熱伝導性樹脂シート1とを備えている。さらに、電力半導体素子12と制御用半導体素子14との間、及び電力半導体素子12とリードフレーム11との間は、金属線15によって接続されている。また、リードフレーム11の端部、及びヒートシンク部材13の外部放熱のための部分以外はモールド樹脂16によって封止されている。
The power module of the present invention includes a power semiconductor element mounted on one heat radiating member, the other heat radiating member that radiates heat generated in the power semiconductor element to the outside, and the heat generated in the power semiconductor element. The heat conductive resin sheet is transmitted from the heat dissipating member to the other heat dissipating member.
FIG. 2 is a schematic cross-sectional view of the power module in the present embodiment. In FIG. 2, the
パワーモジュール10の製造方法は、特に限定されることはなく、公知の方法に従って行うことができる。例えば、まず、リードフレーム11の一方の面に電力半導体素子12及び制御用半導体素子14を半田等により接合する。次に、リードフレーム11の他方の面とヒートシンク部材13との間に、上述したBステージ状態の熱伝導性樹脂シート1を配置し、加圧下で加熱して熱伝導性樹脂シート1を硬化させ、リードフレーム11及びヒートシンク部材13を熱伝導性樹脂シート1と接着させる。次に、電力半導体素子12及び制御用半導体素子14に金属線をワイヤボンド法によって接合して配線を行う。最後に、トランスファーモールド法等によってモールド樹脂16で封止することでパワーモジュール10を製造することができる。なお、本実施の形態では、リードフレーム11とヒートシンク部材13との間に熱伝導性樹脂シート1を配置しているが、この熱伝導性樹脂シート1は熱伝導性及び電気絶縁性に優れているので、ヒートシンク部材13を省略した構成とすることも可能である。
また、上述の熱伝導性樹脂組成物を発熱部材又は放熱部材上に直接塗布して熱伝導性樹脂層を形成する方法を用いることも可能である。
The manufacturing method of the
It is also possible to use a method in which the above-mentioned heat conductive resin composition is directly applied onto a heat generating member or a heat radiating member to form a heat conductive resin layer.
パワーモジュール10では、発熱部材である電力半導体素子12を載置したリードフレーム11とヒートシンク部材13との間に、上述の熱伝導性樹脂シート1が配置されている。そして、この熱伝導性樹脂シート1は、耐熱性、接着性及び吸湿特性に優れ、リフロー工程や高温多湿の条件下に曝されても良好な熱伝導性及び電気絶縁性を維持することができるので、パワーモジュール10における放熱性及び電気絶縁性の長期信頼性が向上する。また、電力半導体素子12で発生した熱を高効率でヒートシンク部材13に伝達して放熱できるので、パワーモジュールの小型化及び高容量化を実現することも可能となる。
In the
図3は、本実施の形態における別のパワーモジュールの断面模式図である。図3において、パワーモジュール20は、ケースタイプのパワーモジュールであり、放熱部材であるヒートシンク部材22と、ヒートシンク部材22の表面に形成された回路基板23と、この回路基板23に載置された電力半導体素子24と、ヒートシンク部材22の周縁部に接着されたケース25と、ケース25内に注入され、回路基板23及び電力半導体素子24等を封止する注型樹脂26と、ヒートシンク部材22の回路基板23が設けられた面に対向する反対側の面に積層された熱伝導性樹脂シート1と、熱伝導性樹脂シート1を介してヒートシンク部材に接合された放熱部材であるヒートスプレッダー21とから構成されている。
パワーモジュール20の製造方法は、特に限定されることはなく、公知の方法に従って行うことができる。例えば、Bステージ状態の熱伝導性樹脂シート1を用いて、上述と同じようにして製造すればよい。このパワーモジュール20では、耐熱性、接着性及び吸湿特性に優れ、リフロー工程や高温多湿の条件下に曝されても良好な熱伝導性及び電気絶縁性を維持し得る熱伝導性樹脂シート1を用いているので、パワーモジュール20における放熱性及び電気絶縁性の長期信頼性が向上する。
FIG. 3 is a schematic cross-sectional view of another power module in the present embodiment. In FIG. 3, the
The manufacturing method of the
以下、実施例及び比較例により本発明の詳細を説明するが、これらによって本発明が限定されるものではない。
(1)熱硬化性樹脂組成物の調製
表1に記載の配合割合で所定のマトリックス樹脂成分を配合した後、メチルエチルケトン(MEK)100質量部を添加して撹拌し、マトリックス樹脂の溶液を調製した。次に、この溶液に表1に記載の配合割合で絶縁性充填材を添加し、十分混合することにより、実施例1〜18及び比較例1〜3の熱硬化性樹脂組成物を調製した。
Hereinafter, although an Example and a comparative example demonstrate the detail of this invention, this invention is not limited by these.
(1) Preparation of thermosetting resin composition After blending predetermined matrix resin components at the blending ratio shown in Table 1, 100 parts by mass of methyl ethyl ketone (MEK) was added and stirred to prepare a matrix resin solution. . Next, the thermosetting resin compositions of Examples 1 to 18 and Comparative Examples 1 to 3 were prepared by adding an insulating filler to this solution at a blending ratio shown in Table 1 and mixing them well.
(2)熱伝導性樹脂シートの作製
上記熱伝導性樹脂組成物を、片面を粗化処理した厚さ100μmの銅箔上にドクターブレード法にて塗布し、90℃で20分間の加熱乾燥処理をした後、加圧プレスを行い、厚さが200μmでBステージ状態の熱伝導性樹脂シートを作製した。
次に、このBステージ状態の熱伝導性樹脂シート上に2mmの銅板を配置し、120℃で1時間加熱した後、180℃で3時間さらに加熱し、熱伝導性樹脂シートを完全に硬化させ、これを接着性の評価用サンプルとした。
ここで、接着性は、オートグラフ試験装置を用いて、上記接着性の評価用サンプルの引張りせん断強度(接着力)を測定することにより評価した。また、上記接着性の評価用サンプルを用いて、リフロー温度285℃における熱伝導性樹脂シートの膨れ発生時間も測定した。
(2) Production of heat conductive resin sheet The above heat conductive resin composition was applied by a doctor blade method onto a 100 μm thick copper foil whose one surface was roughened, and heat-dried at 90 ° C. for 20 minutes. Then, a pressure press was performed to produce a thermally conductive resin sheet having a thickness of 200 μm and a B stage state.
Next, a 2 mm copper plate is placed on the heat conductive resin sheet in the B stage state, heated at 120 ° C. for 1 hour, and further heated at 180 ° C. for 3 hours to completely cure the heat conductive resin sheet. This was used as an adhesive evaluation sample.
Here, the adhesiveness was evaluated by measuring the tensile shear strength (adhesive strength) of the adhesive evaluation sample using an autograph test apparatus. In addition, using the sample for evaluating adhesiveness, the swelling occurrence time of the thermally conductive resin sheet at a reflow temperature of 285 ° C. was also measured.
また、上記熱伝導性樹脂組成物を用い、ポリエチレンテレフタレート(PET)フィルムの離型剤処理面上にドクターブレード法にて塗布したこと以外は上記と同様にして、厚さが500μmでBステージ状態の熱伝導性樹脂シートを作製した。
次に、PETフィルム上に形成した熱伝導性樹脂シートを2枚重ねてプレスした後、120℃で1時間加熱した後、180℃で3時間さらに加熱し、熱伝導性樹脂シートを完全に硬化させ、これを吸湿特性の評価用サンプルとした。
吸湿特性は、130℃、2.7気圧の条件下でプレッシャークッカー試験を行い、試験前及び100時間後のサンプルの質量変化を測定することにより評価した。また、ガラス転移温度は、熱機械分析方法を用い、昇温速度3℃/分にて温度に対する膨張曲線を求め、ガラス転移温度以下及びガラス転移温度以上の直線部分の接線の交点から算出した。
実施例及び比較例のサンプルにおける接着性、膨れ発生時間、吸湿特性(吸湿量)及びガラス転移温度の評価結果を表2に示す。
また、実施例1及び8〜14のサンプルの結果を基に、マトリックス樹脂成分における接着性付与剤の含有量と、接着力及びガラス転移温度との関係を図4に示す。
Further, using the above heat conductive resin composition, a B-stage state with a thickness of 500 μm is the same as described above except that it is applied on a release agent-treated surface of a polyethylene terephthalate (PET) film by a doctor blade method. A heat conductive resin sheet was prepared.
Next, two heat conductive resin sheets formed on the PET film were stacked and pressed, then heated at 120 ° C. for 1 hour, and further heated at 180 ° C. for 3 hours to completely cure the heat conductive resin sheet. This was used as a sample for evaluating moisture absorption characteristics.
The hygroscopic property was evaluated by performing a pressure cooker test at 130 ° C. and 2.7 atm, and measuring the mass change of the sample before and after 100 hours. Further, the glass transition temperature was calculated from the intersection of tangents of the straight line portion below the glass transition temperature and above the glass transition temperature by obtaining an expansion curve with respect to the temperature at a heating rate of 3 ° C./min using a thermomechanical analysis method.
Table 2 shows the evaluation results of adhesiveness, swelling occurrence time, moisture absorption characteristics (moisture absorption amount) and glass transition temperature in the samples of Examples and Comparative Examples.
Moreover, based on the result of the sample of Example 1 and 8-14, the relationship between content of the adhesive imparting agent in a matrix resin component, adhesive force, and glass transition temperature is shown in FIG.
表2に示されているように、実施例の熱伝導性樹脂組成物から得られる熱伝導性樹脂シートでは、接着性、膨れ発生時間及び吸湿特性が良好であった。これに対して、比較例の熱伝導性樹脂組成物から得られる熱伝導性樹脂シートでは、吸湿特性が悪いと共に、膨れ発生時間が短かった。
また、図4に示されているように、接着性付与剤を配合することにより接着力が向上するものの、その配合量が30質量%を超えると接着力が低下した。
以上の結果からわかるように、本発明の熱伝導性樹脂組成物は、耐熱性、接着性及び吸湿特性に優れ、リフロー工程や高温多湿の条件下でも良好な熱伝導性及び電気絶縁性を維持し得る熱伝導性樹脂シートを与えることができる。
As shown in Table 2, the heat conductive resin sheet obtained from the heat conductive resin composition of the example had good adhesiveness, swelling time and moisture absorption characteristics. On the other hand, in the heat conductive resin sheet obtained from the heat conductive resin composition of the comparative example, the hygroscopic property was bad and the swelling occurrence time was short.
In addition, as shown in FIG. 4, although the adhesive strength was improved by blending the adhesion-imparting agent, the adhesive strength was reduced when the blending amount exceeded 30% by mass.
As can be seen from the above results, the heat conductive resin composition of the present invention is excellent in heat resistance, adhesiveness and moisture absorption characteristics, and maintains good heat conductivity and electrical insulation even under reflow process and high temperature and high humidity conditions. The heat conductive resin sheet which can do is provided.
1 熱伝導性樹脂シート、2 マトリックス樹脂、3 絶縁性充填材、10、20 パワーモジュール、11 リードフレーム、12、24 電力半導体素子、13、22 ヒートシンク部材、14 制御用半導体素子、15 金属線、16 モールド樹脂、21 ヒートスプレッダー、23 回路基板、25 ケース、26 注型樹脂。
DESCRIPTION OF
Claims (3)
(A)式(2):
(B)式(1):
(C)硬化促進剤、及び
(D)カップリング剤を含み、
(E)式(3):
(A) Formula (2):
(B) Formula (1):
(C) a curing accelerator , and
(D) including a coupling agent,
(E) Formula (3):
(A)式(2):
(B)式(1):
(C)硬化促進剤、及び
(D)カップリング剤を含み、
(E)式(3):
(A) Formula (2):
(B) Formula (1):
(C) a curing accelerator , and
(D) including a coupling agent,
(E) Formula (3):
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