TW201318152A - 光檢測裝置 - Google Patents
光檢測裝置 Download PDFInfo
- Publication number
- TW201318152A TW201318152A TW101129605A TW101129605A TW201318152A TW 201318152 A TW201318152 A TW 201318152A TW 101129605 A TW101129605 A TW 101129605A TW 101129605 A TW101129605 A TW 101129605A TW 201318152 A TW201318152 A TW 201318152A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- semiconductor
- main surface
- substrate
- semiconductor substrate
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 184
- 239000000758 substrate Substances 0.000 claims abstract description 158
- 239000011521 glass Substances 0.000 claims abstract description 38
- 239000012535 impurity Substances 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 238000010791 quenching Methods 0.000 abstract description 4
- 230000000171 quenching effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000004304 visual acuity Effects 0.000 description 9
- 238000002161 passivation Methods 0.000 description 7
- 230000002123 temporal effect Effects 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
本發明之半導體光檢測元件10包含:複數個雪崩光電二極體APD,其以蓋革模式動作並且形成於半導體基板1N內;滅弧電阻R1,其相對於各雪崩光電二極體APD串列連接並且配置於半導體基板1N之主面1Na側;及複數個貫通電極TE,其與滅弧電阻R1電性連接且自主面1Na側至主面1Nb側為止貫通半導體基板1N而形成。搭載基板20包含對應於每個貫通電極TE而配置於主面20a側之複數個電極E9。貫通電極TE與電極E9經由凸塊電極BE而電性連接,且半導體基板1N之側面1Nc與玻璃基板30之側面30c為同一平面。
Description
本發明係關於一種光檢測裝置。
已知有一種光電二極體陣列(半導體光檢測元件),其包括以蓋革模式(Geiger mode)動作之複數個雪崩光電二極體(avalanche photodiode)、串列連接於各雪崩光電二極體之滅弧電阻(quenching resistance)、及並列地連接有滅弧電阻之信號線(例如,參照專利文獻1)。該光電二極體陣列係於構成像素之雪崩光電二極體檢測光子並進行蓋革放電時,藉由連接於雪崩光電二極體之滅弧電阻之作用而獲得脈衝狀之信號。各雪崩光電二極體分別對光子進行計數。因此,即便於複數個光子以相同之時序入射時,亦根據總輸出脈衝之輸出電荷量或信號強度而判明已入射之光子數。
專利文獻1:日本專利特開2011-003739號公報
於上述半導體光檢測元件中,因滅弧電阻並列地連接於信號線,故各雪崩光電二極體彼此亦並列地連接。於具有並列連接之複數個雪崩光電二極體之半導體光檢測元件中,有用以導引自各雪崩光電二極體輸出之信號之配線
(信號線)之距離(以下稱為「配線距離」)於像素(雪崩光電二極體)間不同之情形。若配線距離於像素間不同,則受到配線所具有之電阻及電容之影響,時間解析力於像素間不同。
本發明之目的在於提供一種可抑制時間解析力於像素間不同並且可更進一步地提高時間解析力之光檢測裝置。
本發明係一種光檢測裝置,其包括:半導體光檢測元件,其具有包含相互對向之第一及第二主面之半導體基板;搭載基板,其與半導體光檢測元件對向配置並且具有與半導體基板之第二主面對向之第三主面;以及玻璃基板,其與半導體光檢測元件對向配置並且具有與半導體基板之第一主面對向之第四主面;且半導體光檢測元件包含:複數個雪崩光電二極體,其以蓋革模式動作並且形成於半導體基板內;滅弧電阻,其相對於各雪崩光電二極體串列連接並且配置於半導體基板之第一主面側;以及複數個貫通電極,其與滅弧電阻電性連接且自第一主面側至第二主面側為止貫通半導體基板而形成;且搭載基板包含:複數個第一電極,其對應於各貫通電極而配置於第三主面側;及信號處理部,其與複數個第一電極電性連接且處理來自各雪崩光電二極體之輸出信號;貫通電極與第一電極經由凸塊電極而電性連接,半導體基板之側面與玻璃基板之側面為同一平面。
於本發明中,於半導體光檢測元件之半導體基板,形成
有與滅弧電阻電性連接且自第一主面側至第二主面側為止貫通半導體基板之複數個貫通電極,且半導體光檢測元件之貫通電極與搭載基板之第一電極經由凸塊電極而電性連接。因此,可使各像素之配線距離極短並且可使其值無差別而一致。因此,配線所具有之電阻及電容之影響明顯得到抑制,時間解析力更進一步地提高。
於本發明中,可藉由與半導體光檢測元件對向配置之玻璃基板而提高半導體基板之機械強度。因半導體基板之側面與玻璃基板之側面為同一平面,故可減少無效空間。
於本發明中,與玻璃基板之第四主面對向之主面可為平坦。於該情形時,可極其容易地進行閃爍器對玻璃基板之設置。
於本發明中,貫通電極可位於各雪崩光電二極體間之區域。於該情形時,可防止各像素中之開口率之降低。
於本發明中,半導體光檢測元件亦可更包含電性連接於所對應之貫通電極並且配置於半導體基板之第二主面側之第二電極,且第一電極與第二電極經由凸塊電極而連接。於該情形時,可確實地進行第一電極與第二電極之藉由凸塊電極之連接。
於本發明中,各雪崩光電二極體亦可包含:第一導電體之半導體基板;第二導電型之第一半導體區域,其形成於半導體基板之第一主面側;第二導電型之第二半導體區域,其形成於第一半導體區域內且雜質濃度高於第一半導體區域;及第三電極,其配置於半導體基板之第一主面側
且將第二半導體區域與滅弧電阻電性連接;且第二電極形成於第二主面之與第二半導體區域對應之區域上。於該情形時,可相對較大地設定第二電極之尺寸。藉此,可更進一步地確實地進行第一電極與第二電極之藉由凸塊電極之連接,並且可提高連接之機械強度。
於本發明中,亦可於貫通電極中電性連接有複數個滅弧電阻。於該情形時,於像素間可實現貫通電極之共用化,且減少形成於半導體基板之貫通電極之數量。藉此,可抑制半導體基板之機械強度之降低。
於本發明中,自各雪崩光電二極體至經由所對應之滅弧電阻之貫通電極為止之配線距離亦可相等。於該情形時,於像素間已實現貫通電極之共用化之構成中,亦能夠防止時間解析力降低。
根據本發明,可提供一種可抑制時間解析力於像素間不同並且可更進一步地提高時間解析力之光檢測裝置。
以下,參照隨附圖式,對於本發明之較佳之實施形態進行詳細說明。再者,於說明中,對於相同要素或具有相同功能之要素使用相同符號,並省略重複之說明。
參照圖1~圖6,對本實施形態之光檢測裝置1之構成進行說明。圖1係表示本實施形態之光檢測裝置之概略立體圖。圖2係用以說明本實施形態之光檢測裝置之剖面構成之圖。圖3及圖4係半導體光檢測元件之概略平面圖。圖5
係光檢測裝置之電路圖。圖6係搭載基板之概略平面圖。
如圖1及圖2所示,光檢測裝置1包括半導體光檢測元件10、搭載基板20、及玻璃基板30。搭載基板20與半導體光檢測元件10對向配置。玻璃基板30與半導體光檢測元件10對向配置。半導體光檢測元件10配置於搭載基板20與玻璃基板30之間。
半導體光檢測元件10包含光電二極體陣列PDA(photodiode array)。光電二極體陣列PDA具有於俯視時呈矩形形狀之半導體基板1N。半導體基板1N包含相互對向之主面1Na與主面1Nb。半導體基板1N為包含Si之N型(第一導電型)半導體基板。
光電二極體陣列PDA包含形成於半導體基板1N之複數個雪崩光電二極體APD(avalanche photodiode)。於各雪崩光電二極體APD中,亦如圖3所示,串列連接有滅弧電阻R1。一個雪崩光電二極體APD構成光電二極體陣列PDA中之一個像素。各雪崩光電二極體APD係於分別與滅弧電阻R1串列連接之狀態下全部並列地連接,且自電源施加逆向偏壓。來自雪崩光電二極體APD之輸出電流係藉由下述信號處理部SP而檢測。於圖3中,為使結構明確化,而省略圖2所示之絕緣層L1之記載。
各雪崩光電二極體APD包含P型(第二導電型)第一半導體區域1PA、及P型(第二導電型)第二半導體區域1PB。第一半導體區域1PA形成於半導體基板1N之主面1Na側。第二半導體區域1PB形成於第一半導體區域1PA內且雜質濃度
高於第一半導體區域1PA。第二半導體區域1PB之平面形狀為例如多邊形(於本實施形態中為八邊形)。第一半導體區域1PA之深度較第二半導體區域1PB深。
半導體基板1N具有N型(第一導電型)半導體區域1PC。半導體區域1PC形成於半導體基板1N之主面1Na側。半導體區域1PC係防止形成於N型半導體基板1N與P型第一半導體區域1PA之間之PN接面於下述配置有貫通電極TE之貫通孔TH露出。半導體區域1PC形成於與貫通孔TH(貫通電極TE)對應之位置。
如圖3所示,各雪崩光電二極體APD包含電極E1及電極E3。電極E1及電極E3係分別配置於半導體基板1N之主面1Na側。電極E1電性連接於第二半導體區域1PB。電極E3自主面1Na側觀察係隔著絕緣層L1而配置於第二半導體區域1PB之外側之半導體基板1N上。第一半導體區域1PA係經由第二半導體區域1PB而電性連接於電極E1。
雪崩光電二極體APD亦如圖4所示包含分別配置於半導體基板1N之主面1Nb側且電性連接於半導體基板1N之電極(省略圖示)、電極E5、及連接於該電極E5之電極E7。電極E5自主面1Nb側觀察係隔著絕緣層L2而配置於第二半導體區域1PB之外側之半導體基板1N上。電極E7自主面1Nb側觀察係隔著絕緣層L2而配置於與第二半導體區域1PB重複之半導體基板1N上。電極E7配置於主面1Nb中之與第二半導體區域1PB對應之區域上。於圖4中,為使結構明確化,而省略圖2所示之鈍化膜PF之記載。
光電二極體陣列PDA係針對各雪崩光電二極體APD之每一個而具有滅弧電阻R1。各滅弧電阻R1係隔著絕緣層L1而配置於第二半導體區域1PB之外側之半導體基板1N上。滅弧電阻R1配置於半導體基板1N之主面1Na側。滅弧電阻R1之一端連接於電極E1,另一端連接於電極E3。
光電二極體陣列PDA包含複數個貫通電極TE。貫通電極TE係針對各雪崩光電二極體APD之每一個而設置。貫通電極TE係自主面1Na側至主面1Nb側為止貫通半導體基板1N而形成。貫通電極TE配置於貫通半導體基板1N之貫通孔TH內。絕緣層L2亦形成於貫通孔TH內。因此,貫通電極TE隔著絕緣層L2而配置於貫通孔TH內。
貫通電極TE之一端連接於電極E3,另一端連接於電極E5。滅弧電阻R1經由電極E3、貫通電極TE、及電極E5而電性連接於電極E7。
貫通電極TE於俯視時係配置於雪崩光電二極體APD間之區域。於本實施形態中,雪崩光電二極體APD係於第一方向上二維排列為M列,於與第一方向正交之第二方向上二維排列為N行(M、N為自然數)。貫通電極TE形成於由4個雪崩光電二極體APD包圍之區域。貫通電極TE因針對每個雪崩光電二極體APD而設置,故於第一方向上二維排列為M列,於第二方向上二維排列為N行。
滅弧電阻R1之電阻率高於連接滅弧電阻R1之電極E1。滅弧電阻R1例如包含多晶矽。作為滅弧電阻R1之形成方法,可使用CVD(Chemical Vapor Deposition,化學氣相沈
積)法。
電極E1、E3、E5、E7及貫通電極TE包含鋁等金屬。於半導體基板包含Si之情形時,作為電極材料,除鋁以外,亦較多地使用AuGe/Ni等。雖亦取決於製程設計,但電極E5、電極E7、及貫通電極TE可一體地形成。作為電極E1、E3、E5、E7及貫通電極TE之形成方法,可使用濺鍍法。
作為使用Si之情形時之P型雜質,使用B等3族元素,同樣地作為N型雜質,使用N、P、或As等5族元素。即便作為半導體之導電型之N型與P型相互置換而構成元件,亦能夠使該元件發揮功能。作為該等雜質之添加方法,可使用擴散法或離子植入法。
作為絕緣層L1、L2之材料,可使用SiO2或SiN。作為絕緣層L1、L2之形成方法,於絕緣層L1、L2包含SiO2之情形時,可使用熱氧化法或濺鍍法。
於上述結構之情形時,藉由在N型半導體基板1N與P型第一半導體區域1PA之間構成PN接面,而形成有雪崩光電二極體APD。半導體基板1N電性連接於形成於基板1N之背面之電極(省略圖示),第一半導體區域1PA經由第二半導體區域1PB而連接於電極E1。滅弧電阻R1相對於雪崩光電二極體APD而串列連接(參照圖5)。
於光電二極體陣列PDA中,使各雪崩光電二極體APD以蓋革模式動作。於蓋革模式中,將大於雪崩光電二極體APD之擊穿電壓(breakdown voltage)之逆向電壓(逆向偏壓)
施加於雪崩光電二極體APD之陽極與陰極之間。對陽極施加(-)電位V1,對陰極施加(+)電位V2。該等電位之極性相對,且亦能夠將其中一個電位設為接地電位。
陽極為P型第一半導體區域1PA,陰極為N型半導體基板1N。若光(光子)入射至雪崩光電二極體APD,則於基板內部進行光電轉換而產生光電子。於第一半導體區域1PA之PN接面界面之附近區域,進行雪崩倍增,經放大之電子群向形成於半導體基板1N之背面之電極流動。即,若光(光子)入射至半導體光檢測元件10(光電二極體陣列PDA)中之任一像素(雪崩光電二極體APD),則倍增而作為信號自電極E3(貫通電極TE)發出。
如圖2及圖13所示,搭載基板20包含相互對向之主面20a與主面20b。搭載基板20於俯視時呈矩形形狀。主面20a與半導體基板1N之主面1Nb對向。搭載基板20包含配置於主面20a側之複數個電極E9。如圖2所示,電極E9對應於貫通電極TE而配置。具體而言,電極E9配置於主面20a之與電極E7對向之各區域上。
半導體基板1N之側面1Nc與搭載基板20之側面20c如圖1及圖2所示為同一平面。於俯視時,半導體基板1N之外緣與搭載基板20之外緣一致。
電極E7與電極E9係藉由凸塊電極BE而連接。藉此,貫通電極TE經由電極E5、電極E7、及凸塊電極BE而電性連接於電極E9。而且,滅弧電阻R1經由電極E3、貫通電極TE、電極E5、電極E7、及凸塊電極BE而電性連接於電極
E9。電極E9亦與電極E1、E3、E5、E7及貫通電極TE同樣地包含鋁等金屬。作為電極材料,除鋁以外,亦可使用AuGe/Ni等。凸塊電極BE例如包含焊料。
搭載基板20亦如圖5所示包含信號處理部SP。搭載基板20構成ASIC(Application Specific Integrated Circuit,特殊應用積體電路)。各電極E9係經由形成於搭載基板20內之配線(省略圖示)而與信號處理部SP電性連接。於信號處理部SP中,輸入來自各雪崩光電二極體APD(半導體光檢測元件10)之輸出信號,信號處理部SP處理來自各雪崩光電二極體APD之輸出信號。信號處理部SP包含將來自各雪崩光電二極體APD之輸出信號轉換為數位脈衝之CMOS(Complementary Metal Oxide Semiconductor,互補金屬氧半導體)電路。搭載基板20係以對應於各像素(雪崩光電二極體APD)而包含記錄時間資訊之電路之方式構成。作為記錄時間資訊之電路,使用時間數位轉換器(TDC:Time to Digital Convertor)、或時間電壓轉換器(TAC:Time to Amplitude Convertor)等。藉此,於搭載基板20內之配線距離之差不會對時間解析力造成影響。
於半導體基板1N之主面1Nb側及搭載基板20之主面20a側配置有於與凸塊電極BE對應之位置形成有開口之鈍化膜PF。鈍化膜PF例如包含SiN。作為鈍化膜PF之形成方法,可使用CVD法。
玻璃基板30包含相互對向之主面30a與主面30b。玻璃基板30於俯視時呈矩形形狀。主面30a與半導體基板1N之主
面1Nb對向。主面30b為平坦。於本實施形態中,主面30a亦為平坦。玻璃基板30與半導體光檢測元件10係藉由光學接著劑OA而光學性地連接。玻璃基板30亦可直接形成於半導體光檢測元件10上。
雖省略圖示,但於玻璃基板30之主面30b藉由光學接著劑而光學性地連接有閃爍器。來自閃爍器之閃爍光通過玻璃基板30入射至半導體光檢測元件10。
半導體基板1N之側面1Nc與玻璃基板30之側面30c亦如圖1所示為同一平面。於俯視時,半導體基板1N之外緣與玻璃基板30之外緣一致。
其次,參照圖7~圖13,對上述光檢測裝置1之製造過程進行說明。圖7~圖13係用以說明本實施形態之光檢測裝置之製造過程之圖。
首先,準備形成有與光電二極體陣列PDA對應之部分(第一半導體區域1PA、第二半導體區域1PB、絕緣層L1、滅弧電阻R1、電極E1、及電極E3)之半導體基板1N(參照圖7)。半導體基板1N係以形成有複數個與光電二極體陣列PDA對應之部分之半導體晶圓之態樣準備。
其次,於所準備之半導體基板1N上經由光學接著劑OA而接著玻璃基板30(參照圖8)。藉此,玻璃基板30與半導體光檢測元件10光學性地連接。玻璃基板30亦與半導體基板1N同樣地以包含複數個玻璃基板30之玻璃基板母材之態樣準備。
繼而,使半導體基板1N自主面1Nb側薄化(參照圖9)。半
導體基板1N之薄化方法可使用機械研磨法或化學研磨法。
繼而,於半導體基板1N形成用以配置貫通電極TE之貫通孔TH(參照圖10)。貫通孔TH之形成方法可適當選擇應用乾式蝕刻法及濕式蝕刻法。
繼而,於形成有貫通孔TH之半導體基板1N形成與光電二極體陣列PDA對應之部分(貫通電極TE、電極E5、及電極E7)(參照圖11)。
繼而,於半導體基板1N之主面1Nb側形成於與凸塊電極BE對應之位置形成有開口之鈍化膜PF,其後,形成凸塊電極BE(參照圖12)。藉此,獲得半導體光檢測元件10與玻璃基板30對向配置之構成。於形成凸塊電極BE之前,於電極E7之自鈍化膜PF露出之區域形成UBM(Under Bump Metal,凸塊底層金屬)。UBM包含與凸塊電極BE電性及物理性連接優異之材料。UBM之形成方法可使用非電解鍍敷法。凸塊電極BE之形成方法可使用搭載焊球之方法或印刷法。
繼而,將配置有玻璃基板30之半導體光檢測元件10與另外準備之搭載基板20凸塊連接(參照圖13)。藉此,獲得對向配置有玻璃基板30之半導體光檢測元件10與搭載基板20對向配置之構成。於搭載基板20之主面20a側,於與電極E9對應之位置形成有凸塊電極BE。搭載基板20亦以形成有複數個搭載基板20之半導體晶圓之態樣中準備。
繼而,藉由切割而切斷包含玻璃基板30(玻璃基板母材)、半導體光檢測元件10(半導體晶圓)、及搭載基板
20(半導體晶圓)之積層體。藉此,半導體基板1N之側面1Nc、搭載基板20之側面20c及玻璃基板30之側面30c為同一平面。藉由該等過程而獲得各光檢測裝置1。
如以上般,於本實施形態中,於半導體光檢測元件10(光電二極體陣列PDA)之半導體基板1N形成有與滅弧電阻R1電性連接且自主面1Na側至主面1Nb側為止貫通半導體基板1N之複數個貫通電極TE。半導體光檢測元件10之貫通電極TE與搭載基板20之電極E9經由凸塊電極BE而電性連接。藉此,可自各像素(雪崩光電二極體APD)使配線距離極短並且可使其值無差別而一致。因此,自各像素之配線所具有之電阻及電容之影響明顯得到抑制,時間解析力更進一步地提高。
於本實施形態中,可藉由與半導體光檢測元件10對向配置之玻璃基板30而提高半導體基板1N之機械強度。尤其於半導體基板1N已薄化之情形時極其有效。
半導體基板1N之側面1Nc與玻璃基板30之側面30c為同一平面。因此,可減少無效空間。半導體基板1N之側面1Nc與搭載基板20之側面20c亦為同一平面。因此,可更進一步地減少無效空間。
玻璃基板30之主面30b為平坦。藉此,可極其容易地進行閃爍器對玻璃基板30之設置。
於本實施形態中,貫通電極TE位於各雪崩光電二極體APD間之區域。藉此,可防止各像素中之開口率之降低。
半導體光檢測元件10包含電性連接於所對應之貫通電極
TE並且配置於半導體基板1N之主面1Nb側之電極E7,且電極E7與電極E9經由凸塊電極BE而連接。藉此,可確實地進行電極E7與電極E9之藉由凸塊電極BE之連接。
各雪崩光電二極體APD包含半導體基板1N、第一半導體區域1PA、第二半導體區域1PB、及將第二半導體區域1PB與滅弧電阻R1電性連接之電極E1,且電極E7形成於主面1Nb之與第二半導體區域1PB對應之區域上。藉此,可相對較大地設定電極E7之尺寸。結果,可更進一步地確實地進行電極E7與電極E9之藉由凸塊電極BE之連接,並且可提高該連接之機械強度。
以上,對本發明之較佳之實施形態進行了說明,但本發明未必限定於上述實施形態,可於不脫離其主旨之範圍內進行各種變更。
於一個貫通電極TE中,電性連接有一個滅弧電阻R1,但並不限定於此。亦可如圖14所示,於一個貫通電極TE中電性連接有複數個滅弧電阻(例如4個滅弧電阻)1R。於該情形時,於像素間可實現貫通電極TE之共用化,從而可減少形成於半導體基板1N之貫通電極TE之數量。藉此,可抑制半導體基板1N之機械強度之降低。電性連接於一個貫通電極TE之滅弧電阻之數量並不限定於「4」,可為「3」以下,且亦可為「5」以上。
當於一個貫通電極TE中電性連接有複數個滅弧電阻R1之情形時,較佳為自各雪崩光電二極體APD至經由所對應之滅弧電阻R1之貫通電極TE為止之配線距離相等。於該
情形時,於像素間已實現貫通電極TE之共用化之構成中,亦能夠防止時間解析力降低。
第一及第二半導體區域1PA、1PB之形狀並不限定於上述形狀,亦可為其他形狀(例如圓形狀等)。雪崩光電二極體APD(第二半導體區域1PB)之數量(列數及行數)或排列並不限定於上述者。
本發明可利用於檢測微弱光之光檢測裝置。
1‧‧‧光檢測裝置
1N‧‧‧半導體基板
1Na‧‧‧主面
1Nb‧‧‧主面
1Nc‧‧‧側面
1PA‧‧‧第一半導體區域
1PB‧‧‧第二半導體區域
10‧‧‧半導體光檢測元件
20‧‧‧搭載基板
20a‧‧‧主面
20b‧‧‧主面
20c‧‧‧側面
30‧‧‧玻璃基板
30a‧‧‧主面
30b‧‧‧主面
30c‧‧‧側面
APD‧‧‧雪崩光電二極體
BE‧‧‧凸塊電極
E1‧‧‧電極
E3‧‧‧電極
E5‧‧‧電極
E7‧‧‧電極
E9‧‧‧電極
PDA‧‧‧光電二極體陣列
R1‧‧‧滅弧電阻
SP‧‧‧信號處理部
TE‧‧‧貫通電極
圖1係表示本發明之實施形態之光檢測裝置之概略立體圖。
圖2係用以說明本實施形態之光檢測裝置之剖面構成之圖。
圖3係半導體光檢測元件之概略平面圖。
圖4係半導體光檢測元件之概略平面圖。
圖5係光檢測裝置之電路圖。
圖6係搭載基板之概略平面圖。
圖7係用以說明本實施形態之光檢測裝置之製造過程之圖。
圖8係用以說明本實施形態之光檢測裝置之製造過程之圖。
圖9係用以說明本實施形態之光檢測裝置之製造過程之圖。
圖10係用以說明本實施形態之光檢測裝置之製造過程之
圖。
圖11係用以說明本實施形態之光檢測裝置之製造過程之圖。
圖12係用以說明本實施形態之光檢測裝置之製造過程之圖。
圖13係用以說明本實施形態之光檢測裝置之製造過程之圖。
圖14係半導體光檢測元件之概略平面圖。
1‧‧‧光檢測裝置
1N‧‧‧半導體基板
1Na‧‧‧主面
1Nb‧‧‧主面
1Nc‧‧‧側面
1PA‧‧‧第一半導體區域
1PB‧‧‧第二半導體區域
1PC‧‧‧N型(第一導電型)半導體區域
10‧‧‧半導體光檢測元件
20‧‧‧搭載基板
20a‧‧‧主面
20c‧‧‧側面
30‧‧‧玻璃基板
30a‧‧‧主面
30c‧‧‧側面
APD‧‧‧雪崩光電二極體
BE‧‧‧凸塊電極
E1‧‧‧電極
E3‧‧‧電極
E5‧‧‧電極
E7‧‧‧電極
E9‧‧‧電極
L1‧‧‧絕緣層
L2‧‧‧絕緣層
OA‧‧‧光學接著劑
PDA‧‧‧光電二極體陣列
PF‧‧‧鈍化膜
R1‧‧‧滅弧電阻
TE‧‧‧貫通電極
TH‧‧‧貫通孔
Claims (7)
- 一種光檢測裝置,其包括:半導體光檢測元件,其具有包含相互對向之第一及第二主面之半導體基板;搭載基板,其與上述半導體光檢測元件對向配置並且具有與上述半導體基板之上述第二主面對向之第三主面;以及玻璃基板,其與上述半導體光檢測元件對向配置並且具有與上述半導體基板之上述第一主面對向之第四主面;且上述半導體光檢測元件包含:複數個雪崩光電二極體,其以蓋革模式動作並且形成於上述半導體基板內;滅弧電阻,其相對於各上述雪崩光電二極體串列連接並且配置於上述半導體基板之上述第一主面側;及複數個貫通電極,其與上述滅弧電阻電性連接且自上述第一主面側至上述第二主面側為止貫通上述半導體基板而形成;且上述搭載基板包含:複數個第一電極,其對應於各上述貫通電極而配置於上述第三主面側;及信號處理部,其與上述複數個第一電極電性連接且處理來自各上述雪崩光電二極體之輸出信號;且上述貫通電極與上述第一電極經由凸塊電極而電性連接;且上述半導體基板之側面與上述玻璃基板之側面為同一 平面。
- 如請求項1之光檢測裝置,其中與上述玻璃基板之上述第四主面對向之主面為平坦。
- 如請求項1或2之光檢測裝置,其中上述貫通電極位於各上述雪崩光電二極體間之區域。
- 如請求項1至3中任一項之光檢測裝置,其中上述半導體光檢測元件更包含電性連接於所對應之上述貫通電極並且配置於上述半導體基板之上述第二主面側之第二電極;且上述第一電極與上述第二電極經由上述凸塊電極而連接。
- 如請求項4之光檢測裝置,其中各上述雪崩光電二極體包含:第一導電體之上述半導體基板;第二導電型之第一半導體區域,其形成於上述半導體基板之上述第一主面側;第二導電型之第二半導體區域,其形成於上述第一半導體區域內且雜質濃度高於上述第一半導體區域;及第三電極,其配置於上述半導體基板之上述第一主面側且將上述第二半導體區域與上述滅弧電阻電性連接;且上述第二電極形成於上述第二主面之與上述第二半導體區域對應之區域上。
- 如請求項1至5中任一項之光檢測裝置,其中於上述貫通 電極中電性連接有複數個上述滅弧電阻。
- 如請求項6之光檢測裝置,其中自各上述雪崩光電二極體至經由所對應之上述滅弧電阻之上述貫通電極為止之配線距離相等。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011232106A JP5832852B2 (ja) | 2011-10-21 | 2011-10-21 | 光検出装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201318152A true TW201318152A (zh) | 2013-05-01 |
TWI573255B TWI573255B (zh) | 2017-03-01 |
Family
ID=48140660
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105142732A TWI614882B (zh) | 2011-10-21 | 2012-08-15 | 光檢測裝置 |
TW101129605A TWI573255B (zh) | 2011-10-21 | 2012-08-15 | Light detection device |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105142732A TWI614882B (zh) | 2011-10-21 | 2012-08-15 | 光檢測裝置 |
Country Status (6)
Country | Link |
---|---|
US (3) | US9435686B2 (zh) |
JP (1) | JP5832852B2 (zh) |
CN (3) | CN105609583B (zh) |
DE (1) | DE112012004387T5 (zh) |
TW (2) | TWI614882B (zh) |
WO (1) | WO2013058003A1 (zh) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5832852B2 (ja) * | 2011-10-21 | 2015-12-16 | 浜松ホトニクス株式会社 | 光検出装置 |
JP5791461B2 (ja) | 2011-10-21 | 2015-10-07 | 浜松ホトニクス株式会社 | 光検出装置 |
JP5926921B2 (ja) * | 2011-10-21 | 2016-05-25 | 浜松ホトニクス株式会社 | 光検出装置 |
US9496435B2 (en) | 2013-05-22 | 2016-11-15 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US10468543B2 (en) | 2013-05-22 | 2019-11-05 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US10700225B2 (en) | 2013-05-22 | 2020-06-30 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US10446700B2 (en) | 2013-05-22 | 2019-10-15 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US11121271B2 (en) | 2013-05-22 | 2021-09-14 | W&WSens, Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
JP6162595B2 (ja) * | 2013-12-19 | 2017-07-12 | 浜松ホトニクス株式会社 | 光検出器 |
US20150285942A1 (en) * | 2014-04-04 | 2015-10-08 | General Electric Company | Solid state photo multiplier device |
JP2016062996A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 光検出器 |
EP3221895A4 (en) | 2014-11-18 | 2018-08-15 | Shih-Yuan Wang | Microstructure enhanced absorption photosensitive devices |
JP6735108B2 (ja) * | 2015-02-20 | 2020-08-05 | キヤノンメディカルシステムズ株式会社 | X線コンピュータ断層撮影装置及びx線検出器 |
JP6552850B2 (ja) * | 2015-03-16 | 2019-07-31 | 株式会社東芝 | 光検出装置 |
JP6663167B2 (ja) * | 2015-03-18 | 2020-03-11 | 浜松ホトニクス株式会社 | 光検出装置 |
KR102605400B1 (ko) * | 2015-03-31 | 2023-11-24 | 하마마츠 포토닉스 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
ITUB20151963A1 (it) * | 2015-07-07 | 2017-01-07 | Lfoundry Srl | Sensore ottico a risposta angolare stretta |
US10147682B2 (en) | 2015-11-30 | 2018-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure for stacked logic performance improvement |
WO2017110515A1 (ja) * | 2015-12-24 | 2017-06-29 | ソニー株式会社 | 撮像装置、電子機器 |
US20170330980A1 (en) * | 2016-05-16 | 2017-11-16 | General Electric Company | Die repatterning transmission lines on silicon photomultipliers |
US9726841B1 (en) * | 2016-07-12 | 2017-08-08 | Inphi Corporation | Integrated photo detector, method of making the same |
US10153310B2 (en) * | 2016-07-18 | 2018-12-11 | Omnivision Technologies, Inc. | Stacked-chip backside-illuminated SPAD sensor with high fill-factor |
US11374043B2 (en) * | 2016-07-27 | 2022-06-28 | Hamamatsu Photonics K.K. | Photodetection device with matrix array of avalanche diodes |
EP3493276B1 (en) * | 2016-07-27 | 2022-03-23 | Hamamatsu Photonics K.K. | Light detection device |
JP6649207B2 (ja) * | 2016-08-26 | 2020-02-19 | 株式会社東芝 | 受光装置 |
KR102483660B1 (ko) * | 2016-11-11 | 2023-01-03 | 하마마츠 포토닉스 가부시키가이샤 | 광 검출 장치 |
JP6712215B2 (ja) * | 2016-11-11 | 2020-06-17 | 浜松ホトニクス株式会社 | 光検出装置 |
CN109923383B (zh) * | 2016-11-11 | 2021-07-27 | 浜松光子学株式会社 | 光检测装置 |
JP2018156984A (ja) * | 2017-03-15 | 2018-10-04 | 株式会社東芝 | 光検出素子 |
JP6884948B2 (ja) * | 2017-03-17 | 2021-06-09 | 国立研究開発法人情報通信研究機構 | 高速フォトディテクターアレー |
US11233076B2 (en) * | 2017-06-07 | 2022-01-25 | Argo AI, LLC | Geiger-mode focal plane array with monolithically integrated resistors |
JP6938239B2 (ja) * | 2017-06-23 | 2021-09-22 | 浜松ホトニクス株式会社 | 光検出器及び光検出装置 |
TWI822686B (zh) | 2017-07-06 | 2023-11-21 | 日商濱松赫德尼古斯股份有限公司 | 光學裝置 |
JP6503151B1 (ja) | 2017-07-06 | 2019-04-17 | 浜松ホトニクス株式会社 | 光学デバイス |
EP3650910A4 (en) * | 2017-07-06 | 2021-03-24 | Hamamatsu Photonics K.K. | OPTICAL DEVICE |
CN114384686B (zh) | 2017-07-06 | 2024-05-14 | 浜松光子学株式会社 | 光学装置 |
JP7112876B2 (ja) | 2017-07-06 | 2022-08-04 | 浜松ホトニクス株式会社 | 光学デバイス |
JP6932580B2 (ja) * | 2017-08-04 | 2021-09-08 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
EP3712673B1 (en) | 2017-11-15 | 2023-11-08 | Hamamatsu Photonics K.K. | Optical device production method |
JP7114264B2 (ja) | 2018-02-09 | 2022-08-08 | キヤノン株式会社 | 光電変換装置及び撮像システム |
JP6878338B2 (ja) | 2018-03-14 | 2021-05-26 | 株式会社東芝 | 受光装置および受光装置の製造方法 |
JP6806835B2 (ja) * | 2018-04-28 | 2021-01-06 | エスゼット ディージェイアイ テクノロジー カンパニー リミテッドSz Dji Technology Co.,Ltd | 半導体装置 |
JP6737316B2 (ja) * | 2018-10-26 | 2020-08-05 | 大日本印刷株式会社 | 放射線検出素子 |
US11374135B2 (en) * | 2019-08-30 | 2022-06-28 | Globalfoundries Singapore Pte. Ltd. | Sensor and method of forming the same |
JP2020129674A (ja) * | 2020-04-20 | 2020-08-27 | 株式会社東芝 | 光検出器 |
JP7431699B2 (ja) | 2020-08-20 | 2024-02-15 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
WO2022256923A1 (en) | 2021-06-09 | 2022-12-15 | Socpra Sciences Et Genie S.E.C. | Opto-electrical insulated frontside illuminated 3d digital silicon photomultiplier |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001318155A (ja) * | 2000-02-28 | 2001-11-16 | Toshiba Corp | 放射線検出器、およびx線ct装置 |
JP4522531B2 (ja) | 2000-04-04 | 2010-08-11 | 浜松ホトニクス株式会社 | 半導体エネルギー検出素子 |
JP4237966B2 (ja) * | 2002-03-08 | 2009-03-11 | 浜松ホトニクス株式会社 | 検出器 |
JP2004057507A (ja) | 2002-07-29 | 2004-02-26 | Toshiba Corp | X線検出装置、貫通電極の製造方法及びx線断層撮影装置 |
AU2003254876A1 (en) | 2002-08-09 | 2004-03-11 | Hamamatsu Photonics K.K. | Photodiode array, production method therefor, and radiation detector |
EP2506305B1 (en) * | 2002-09-24 | 2014-11-05 | Hamamatsu Photonics K. K. | Method for manufacturing a photodiode array |
JP4440554B2 (ja) * | 2002-09-24 | 2010-03-24 | 浜松ホトニクス株式会社 | 半導体装置 |
JP4220808B2 (ja) | 2003-03-10 | 2009-02-04 | 浜松ホトニクス株式会社 | ホトダイオードアレイおよびその製造方法並びに放射線検出器 |
JP2005303258A (ja) | 2004-03-16 | 2005-10-27 | Fujikura Ltd | デバイス及びその製造方法 |
JP4443379B2 (ja) | 2004-10-26 | 2010-03-31 | 三洋電機株式会社 | 半導体装置の製造方法 |
RU2411542C2 (ru) * | 2005-04-22 | 2011-02-10 | Конинклейке Филипс Электроникс Н.В. | Цифровой кремниевый фотоумножитель для врп-пэт |
GB2426575A (en) | 2005-05-27 | 2006-11-29 | Sensl Technologies Ltd | Photon detector using controlled sequences of reset and discharge of a capacitor to sense photons |
GB2426576A (en) | 2005-05-27 | 2006-11-29 | Sensl Technologies Ltd | Light sensor module comprising a plurality of elements in a close-tiled arrangement |
CN101258577A (zh) | 2005-06-10 | 2008-09-03 | 增强技术公司 | 高灵敏度、高分辨率的检测器装置和阵列 |
JP4720434B2 (ja) | 2005-10-31 | 2011-07-13 | 日本ビクター株式会社 | 固体撮像装置 |
JP2009525619A (ja) | 2006-02-01 | 2009-07-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ガイガーモード・アバランシェ・フォトダイオード |
TWI443817B (zh) * | 2006-07-03 | 2014-07-01 | Hamamatsu Photonics Kk | Photodiode array |
JP4403424B2 (ja) | 2006-11-30 | 2010-01-27 | ソニー株式会社 | 固体撮像装置 |
GB2451447B (en) | 2007-07-30 | 2012-01-11 | Sensl Technologies Ltd | Light sensor |
GB2451678A (en) | 2007-08-10 | 2009-02-11 | Sensl Technologies Ltd | Silicon photomultiplier circuitry for minimal onset and recovery times |
WO2009053912A1 (en) | 2007-10-25 | 2009-04-30 | Nxp B.V. | Semiconductor device with improved esd protection |
WO2010035379A1 (ja) | 2008-09-26 | 2010-04-01 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP5371381B2 (ja) * | 2008-11-05 | 2013-12-18 | ラピスセミコンダクタ株式会社 | 半導体装置および半導体装置の製造方法 |
JP5185208B2 (ja) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオード及びフォトダイオードアレイ |
JP2010251558A (ja) | 2009-04-16 | 2010-11-04 | Toshiba Corp | 固体撮像装置 |
JP2010283223A (ja) | 2009-06-05 | 2010-12-16 | Hamamatsu Photonics Kk | 半導体光検出素子及び半導体光検出素子の製造方法 |
JP5297276B2 (ja) * | 2009-06-18 | 2013-09-25 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
JP5546806B2 (ja) | 2009-06-26 | 2014-07-09 | 株式会社東芝 | 核医学イメージング装置 |
US8476571B2 (en) | 2009-12-22 | 2013-07-02 | Siemens Aktiengesellschaft | SiPM photosensor with early signal digitization |
US8860166B2 (en) * | 2010-03-23 | 2014-10-14 | Stmicroelectronics S.R.L. | Photo detector array of geiger mode avalanche photodiodes for computed tomography systems |
JP5562207B2 (ja) | 2010-10-29 | 2014-07-30 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
JP5926921B2 (ja) * | 2011-10-21 | 2016-05-25 | 浜松ホトニクス株式会社 | 光検出装置 |
JP5832852B2 (ja) * | 2011-10-21 | 2015-12-16 | 浜松ホトニクス株式会社 | 光検出装置 |
JP5791461B2 (ja) * | 2011-10-21 | 2015-10-07 | 浜松ホトニクス株式会社 | 光検出装置 |
-
2011
- 2011-10-21 JP JP2011232106A patent/JP5832852B2/ja active Active
-
2012
- 2012-08-02 WO PCT/JP2012/069730 patent/WO2013058003A1/ja active Application Filing
- 2012-08-02 CN CN201610044987.6A patent/CN105609583B/zh active Active
- 2012-08-02 US US14/352,429 patent/US9435686B2/en active Active
- 2012-08-02 CN CN201280051779.9A patent/CN103890971B/zh active Active
- 2012-08-02 DE DE112012004387.1T patent/DE112012004387T5/de not_active Withdrawn
- 2012-08-02 CN CN201610044557.4A patent/CN105633192B/zh active Active
- 2012-08-15 TW TW105142732A patent/TWI614882B/zh active
- 2012-08-15 TW TW101129605A patent/TWI573255B/zh active
-
2016
- 2016-01-21 US US15/002,706 patent/US9773935B2/en active Active
- 2016-07-19 US US15/213,629 patent/US9748428B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20160141439A1 (en) | 2016-05-19 |
WO2013058003A1 (ja) | 2013-04-25 |
US20140263975A1 (en) | 2014-09-18 |
TWI614882B (zh) | 2018-02-11 |
CN105633192B (zh) | 2018-08-28 |
CN105609583B (zh) | 2017-12-08 |
US9435686B2 (en) | 2016-09-06 |
DE112012004387T5 (de) | 2014-07-10 |
TWI573255B (zh) | 2017-03-01 |
JP2013089918A (ja) | 2013-05-13 |
CN105609583A (zh) | 2016-05-25 |
CN103890971A (zh) | 2014-06-25 |
CN103890971B (zh) | 2016-03-02 |
US20160329455A1 (en) | 2016-11-10 |
US9773935B2 (en) | 2017-09-26 |
CN105633192A (zh) | 2016-06-01 |
TW201717371A (zh) | 2017-05-16 |
US9748428B2 (en) | 2017-08-29 |
JP5832852B2 (ja) | 2015-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI573255B (zh) | Light detection device | |
TWI607553B (zh) | Semiconductor light detection element | |
TWI569429B (zh) | Light detection device | |
JP6282368B2 (ja) | 光検出装置 | |
WO2016147504A1 (ja) | 光検出装置 | |
JP6140868B2 (ja) | 半導体光検出素子 | |
JP5927334B2 (ja) | 光検出装置 | |
JP5911629B2 (ja) | 光検出装置 | |
JP6318190B2 (ja) | 光検出装置 | |
JP6186038B2 (ja) | 半導体光検出素子 | |
JP6244403B2 (ja) | 半導体光検出素子 | |
JP6282307B2 (ja) | 半導体光検出素子 | |
JP6116728B2 (ja) | 半導体光検出素子 | |
JP5989872B2 (ja) | 光検出装置の接続構造 |