TW201318036A - 成膜方法 - Google Patents

成膜方法 Download PDF

Info

Publication number: TW201318036A
Authority: TW; Taiwan
Prior art keywords: gas; sih; film; plasma; gas supply
Prior art date: 2011-08-01

Application number

TW101127443A

Other languages

English (en)

Chinese (zh)

Inventor

Masato Morishima

Original Assignee

Tokyo Electron Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-08-01

Filing date

2012-07-30

Publication date

2013-05-01

2012-07-30 Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd

2013-05-01 Publication of TW201318036A publication Critical patent/TW201318036A/zh

Links

238000000034 method Methods 0.000 title claims abstract description 39
230000015572 biosynthetic process Effects 0.000 title abstract description 25
239000007789 gas Substances 0.000 claims abstract description 181
239000001307 helium Substances 0.000 claims abstract description 25
229910052734 helium Inorganic materials 0.000 claims abstract description 25
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 25
239000000758 substrate Substances 0.000 claims abstract description 25
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 19
DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 39
229910052707 ruthenium Inorganic materials 0.000 claims description 28
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 27
230000008569 process Effects 0.000 claims description 23
238000009616 inductively coupled plasma Methods 0.000 claims description 14
239000003085 diluting agent Substances 0.000 claims description 11
238000002425 crystallisation Methods 0.000 claims description 7
230000008025 crystallization Effects 0.000 claims description 7
238000001069 Raman spectroscopy Methods 0.000 claims description 6
239000013078 crystal Substances 0.000 claims description 5
230000003213 activating effect Effects 0.000 claims description 4
230000007547 defect Effects 0.000 abstract description 15
238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 6
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 5
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
229910052710 silicon Inorganic materials 0.000 abstract 1
239000010703 silicon Substances 0.000 abstract 1
239000010408 film Substances 0.000 description 79
239000012495 reaction gas Substances 0.000 description 33
241000894007 species Species 0.000 description 32
230000000052 comparative effect Effects 0.000 description 25
238000010790 dilution Methods 0.000 description 23
239000012895 dilution Substances 0.000 description 23
238000002474 experimental method Methods 0.000 description 15
239000001257 hydrogen Substances 0.000 description 14
229910052739 hydrogen Inorganic materials 0.000 description 14
229910021424 microcrystalline silicon Inorganic materials 0.000 description 9
238000000354 decomposition reaction Methods 0.000 description 8
229910052732 germanium Inorganic materials 0.000 description 8
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 8
230000007246 mechanism Effects 0.000 description 8
WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 6
OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
238000005259 measurement Methods 0.000 description 6
OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 5
230000005684 electric field Effects 0.000 description 5
VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 4
AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 4
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
JQMFQLVAJGZSQS-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JQMFQLVAJGZSQS-UHFFFAOYSA-N 0.000 description 3
CONKBQPVFMXDOV-QHCPKHFHSA-N 6-[(5S)-5-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-2-oxo-1,3-oxazolidin-3-yl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C[C@H]1CN(C(O1)=O)C1=CC2=C(NC(O2)=O)C=C1 CONKBQPVFMXDOV-QHCPKHFHSA-N 0.000 description 3
YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 3
-1 Si n H 2n+2 (n=2 Chemical compound 0.000 description 3
230000009471 action Effects 0.000 description 3
238000006243 chemical reaction Methods 0.000 description 3
238000001816 cooling Methods 0.000 description 3
230000007423 decrease Effects 0.000 description 3
230000000694 effects Effects 0.000 description 3
239000011521 glass Substances 0.000 description 3
150000002431 hydrogen Chemical class 0.000 description 3
238000004020 luminiscence type Methods 0.000 description 3
238000004519 manufacturing process Methods 0.000 description 3
229910052715 tantalum Inorganic materials 0.000 description 3
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
239000010409 thin film Substances 0.000 description 3
238000004435 EPR spectroscopy Methods 0.000 description 2
OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
238000002441 X-ray diffraction Methods 0.000 description 2
230000004913 activation Effects 0.000 description 2
238000004458 analytical method Methods 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
239000004020 conductor Substances 0.000 description 2
230000007723 transport mechanism Effects 0.000 description 2
229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
229910052684 Cerium Inorganic materials 0.000 description 1
IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
240000006829 Ficus sundaica Species 0.000 description 1
238000003841 Raman measurement Methods 0.000 description 1
229910021417 amorphous silicon Inorganic materials 0.000 description 1
238000004364 calculation method Methods 0.000 description 1
SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
239000002826 coolant Substances 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
230000009849 deactivation Effects 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
230000005674 electromagnetic induction Effects 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
150000002371 helium Chemical class 0.000 description 1
238000005984 hydrogenation reaction Methods 0.000 description 1
239000011810 insulating material Substances 0.000 description 1
238000010030 laminating Methods 0.000 description 1
238000000504 luminescence detection Methods 0.000 description 1
239000000463 material Substances 0.000 description 1
238000010248 power generation Methods 0.000 description 1
238000007789 sealing Methods 0.000 description 1
239000000126 substance Substances 0.000 description 1
ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
239000005052 trichlorosilane Substances 0.000 description 1
229910052724 xenon Inorganic materials 0.000 description 1
FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
229910052727 yttrium Inorganic materials 0.000 description 1
VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
- H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Microelectronics & Electronic Packaging (AREA)
Materials Engineering (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
General Physics & Mathematics (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Mechanical Engineering (AREA)
Chemical Kinetics & Catalysis (AREA)
Plasma & Fusion (AREA)
Inorganic Chemistry (AREA)
Crystallography & Structural Chemistry (AREA)
Electromagnetism (AREA)
Chemical Vapour Deposition (AREA)
Photovoltaic Devices (AREA)

TW101127443A 2011-08-01 2012-07-30 成膜方法 TW201318036A (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2011168766A JP2013033828A (ja)	2011-08-01	2011-08-01	成膜方法

Publications (1)

Publication Number	Publication Date
TW201318036A true TW201318036A (zh)	2013-05-01

Family

ID=47628844

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW101127443A TW201318036A (zh)	2011-08-01	2012-07-30	成膜方法

Country Status (3)

Country	Link
JP (1)	JP2013033828A (ja)
TW (1)	TW201318036A (ja)
WO (1)	WO2013018292A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR102571109B1 (ko) *	2015-03-13	2023-08-25	뉴사우스 이노베이션즈 피티와이 리미티드	실리콘 재료의 가공 방법
JP6861479B2 (ja) *	2016-06-24	2021-04-21	東京エレクトロン株式会社	プラズマ成膜方法およびプラズマ成膜装置
JP6914149B2 (ja) *	2017-09-07	2021-08-04	東京エレクトロン株式会社	プラズマ処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH02202018A (ja) *	1989-01-31	1990-08-10	Tonen Corp	多結晶シリコン薄膜の製造方法
JP3040247B2 (ja) *	1992-03-27	2000-05-15	株式会社トクヤマ	シリコン薄膜の製造法
JP2007165717A (ja) *	2005-12-15	2007-06-28	Tokyo Electron Ltd	成膜方法及び成膜装置

2011
- 2011-08-01 JP JP2011168766A patent/JP2013033828A/ja not_active Withdrawn
2012
- 2012-07-12 WO PCT/JP2012/004522 patent/WO2013018292A1/ja active Application Filing
- 2012-07-30 TW TW101127443A patent/TW201318036A/zh unknown

Also Published As

Publication number	Publication date
JP2013033828A (ja)	2013-02-14
WO2013018292A1 (ja)	2013-02-07

Publication	Publication Date	Title
US20170029942A1 (en)	2017-02-02	Pretreatment method, graphene forming method and graphene fabrication apparatus
TWI224628B (en)	2004-12-01	Plasma processing method and apparatus
WO2008056557A1 (fr)	2008-05-15	Procédé permettant de former un mince film de silicium par un procédé de dépôt chimique en phase vapeur assisté par plasma
US20130192759A1 (en)	2013-08-01	Plasma processing device
US20150108493A1 (en)	2015-04-23	Silicon carbide epitaxial wafer, and preparation method thereof
Lu et al.	2014	Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma–effect of TMG flow rate and VHF power
CN107546096A (zh)	2018-01-05	等离子体成膜装置和基板载置台
KR100325500B1 (ko)	2002-02-25	반도체 박막의 제조 방법 및 그 장치
TW201318036A (zh)	2013-05-01	成膜方法
JP2014075493A (ja)	2014-04-24	成膜方法及び成膜装置
JP2020105040A (ja)	2020-07-09	基板上のグラフェン膜の直接成膜法及び走査型プローブ顕微鏡用カンチレバー
JP2006176859A (ja)	2006-07-06	シリコンナノ結晶構造体の作製方法
JP5788627B2 (ja)	2015-10-07	カーボンナノチューブ成長方法
US8685360B2 (en)	2014-04-01	Method for the production of diamond
JP2000096239A (ja)	2000-04-04	誘導結合型プラズマｃｖｄ方法及びそのための誘導結合型プラズマｃｖｄ装置
Amalraj et al.	2020	Influence of chamber pressure on the crystal quality of homo-epitaxial GaN grown by radical-enhanced MOCVD (REMOCVD)
JP2002008982A (ja)	2002-01-11	プラズマｃｖｄ装置
WO2013172203A1 (ja)	2013-11-21	太陽電池の製造方法及びプラズマ処理装置
US10559459B2 (en)	2020-02-11	Method for producing silicon nitride film and silicon nitride film
JP5039120B2 (ja)	2012-10-03	プラズマ処理装置用のアルミナ部材及びプラズマ処理装置用のアルミナ部材の製造方法
WO2013031142A1 (ja)	2013-03-07	成膜方法及び記憶媒体
JP2012182349A (ja)	2012-09-20	プラズマ処理装置及び被処理体のプラズマ処理方法
JPH1174204A (ja)	1999-03-16	半導体薄膜の製造方法およびその装置
JP6944699B2 (ja)	2021-10-06	六方晶系窒化ホウ素膜の製造方法
JP3547158B2 (ja)	2004-07-28	多層シリコン膜の製造方法