TW201316445A

TW201316445A - Wafer carrier with thermal features

Info

Publication number: TW201316445A
Application number: TW101131915A
Authority: TW
Inventors: Ajit Paranjpe; Boris Volf; Eric A Armour; Sandeep Krishnan; Guang-Hua Wei; Lukas Urban
Original assignee: Veeco Instr Inc
Priority date: 2011-09-01
Filing date: 2012-08-31
Publication date: 2013-04-16

Abstract

A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with thermal control features such as trenches which form thermal barriers having lower thermal conductivity than surrounding portions of the carrier. These thermal control features promote a more uniform temperature distribution across the wafer surfaces and across the carrier top surface.

Description

具有熱特性的晶圓承載物 Wafer carrier with thermal characteristics

本發明係關於晶圓處理裝置、用於該處理裝置中之晶圓承載物及晶圓處理之方法。 The present invention relates to a wafer processing apparatus, a wafer carrier for use in the processing apparatus, and a method of wafer processing.

相關申請案之交互參照 Cross-references to related applications

本申請案主張2011年9月1日提出申請之美國臨時專利申請案第61/529,988號之申請日期之權利，其揭示內容以引用方式併入本文中。 The present application claims the benefit of the filing date of U.S. Provisional Patent Application No. 61/529,988, filed on Sep. 1, 2011, the disclosure of which is hereby incorporated by reference.

許多半導體器件係藉由半導體材料於基板上之磊晶生長而形成。基板通常係呈圓盤形式之結晶材料，其通稱為「晶圓」。舉例而言，自諸如III-V半導體等化合物半導體形成之器件通常係藉由使用金屬有機化學氣相沈積或「MOCVD」生長化合物半導體之連續層來形成。在該製程中，將晶圓暴露於流經晶圓表面之氣體組合(通常包含金屬有機化合物及第V族元素之源)，同時將晶圓維持在高溫下。III-V半導體之一個實例係氮化鎵，其可藉由使有機鎵化合物與氨氣在具有適宜晶格間距之基板(例如藍寶石晶圓)上反應而形成。通常，在氮化鎵及有關化合物之沈積期間將晶圓維持在約500-1200℃之溫度下。 Many semiconductor devices are formed by epitaxial growth of a semiconductor material on a substrate. The substrate is typically a crystalline material in the form of a disk, commonly referred to as a "wafer." For example, a device formed from a compound semiconductor such as a III-V semiconductor is usually formed by growing a continuous layer of a compound semiconductor using metal organic chemical vapor deposition or "MOCVD." In this process, the wafer is exposed to a gas combination (usually comprising a metal organic compound and a source of a Group V element) flowing through the surface of the wafer while maintaining the wafer at a high temperature. One example of a III-V semiconductor is gallium nitride, which can be formed by reacting an organogallium compound with ammonia gas on a substrate having a suitable lattice spacing, such as a sapphire wafer. Typically, the wafer is maintained at a temperature of between about 500 and 1200 ° C during deposition of gallium nitride and related compounds.

藉由在稍微不同之反應條件(例如添加其他第III族或第V族元素以改變晶體結構及半導體之帶隙)下於晶圓表面上依次沈積多個層可製造複合材料器件。舉例而言，在基於氮化鎵之半導體中，可以可變比例使用銦、鋁或二者以改變半導體之帶隙。同樣，可添加p型或n型摻雜物以控制各層之傳導率。在形成全部半導體層後且通常在施加適當電觸點後，將晶圓切割成個別器件。諸如發光二極體(「LED」)、雷射及其他電子及光電器件等器件可以此方式製造。 Composite devices can be fabricated by sequentially depositing multiple layers on the surface of the wafer under slightly different reaction conditions, such as the addition of other Group III or Group V elements to modify the crystal structure and the band gap of the semiconductor. For example, in a gallium nitride-based semiconductor, indium, aluminum, or both can be used in a variable ratio. Change the band gap of the semiconductor. Likewise, p-type or n-type dopants can be added to control the conductivity of the layers. After forming all of the semiconductor layers and typically after applying appropriate electrical contacts, the wafers are diced into individual devices. Devices such as light-emitting diodes ("LEDs"), lasers, and other electronic and optoelectronic devices can be fabricated in this manner.

在典型化學氣相沈積製程中，將多個晶圓固持在通稱為晶圓承載物之器件上，以便每一晶圓之頂部表面在晶圓承載物之頂部表面處暴露。然後將晶圓承載物放置在反應室中且維持在期望溫度下，同時使氣體混合物流經晶圓承載物之表面。重要的是，在該製程期間使承載物上各個晶圓之頂部表面上的全部點皆維持在均勻條件下。反應性氣體之組成及晶圓表面之溫度的微小變化皆可使所得半導體器件之性質產生不期望變化。舉例而言，若沈積氮化鎵及氮化銦層，則晶圓表面溫度之變化會造成所沈積層之組成及帶隙之變化。由於銦具有相對較高之蒸氣壓，因此所沈積層在表面溫度較高之彼等晶圓區域中將具有較低比例之銦及較大之帶隙。若所沈積層係LED結構之作用發光層，則自晶圓所形成之LED的發射波長亦將有所變化。因此，迄今為止業內為了維持均勻條件已作出了相當大之努力。 In a typical chemical vapor deposition process, multiple wafers are held on a device known as a wafer carrier such that the top surface of each wafer is exposed at the top surface of the wafer carrier. The wafer carrier is then placed in the reaction chamber and maintained at the desired temperature while flowing the gas mixture through the surface of the wafer carrier. It is important that all points on the top surface of each wafer on the carrier are maintained under uniform conditions during the process. The composition of the reactive gas and small changes in the temperature of the wafer surface can cause undesirable changes in the properties of the resulting semiconductor device. For example, if a layer of gallium nitride and indium nitride is deposited, a change in the surface temperature of the wafer causes a change in the composition and band gap of the deposited layer. Since indium has a relatively high vapor pressure, the deposited layers will have a lower proportion of indium and a larger band gap in their wafer regions where the surface temperature is higher. If the deposited layer is an LED structure that acts as a light-emitting layer, the emission wavelength of the LED formed from the wafer will also vary. Therefore, the industry has made considerable efforts to maintain uniform conditions to date.

一種已被工業上廣泛認可之CVD裝置類型使用呈大圓盤形式且具有多個晶圓固持區域(各自適於固持一個晶圓)之晶圓承載物。該晶圓承載物係支撐在反應室內之心軸上，以使帶有晶圓暴露表面之晶圓承載物之頂部表面向上面向氣體分配元件。在心軸旋轉時，將氣體向下引導至晶圓承載物之頂部表面上並流經頂部表面朝向晶圓承載物周邊。所用氣體係經由佈置於晶圓承載物下方之埠自反應室排空。藉由加熱元件、通常佈置於晶圓承載物之底部表面下方之電阻性加熱元件而將晶圓承載物維持在期望之高溫下。將該等加熱元件維持在高於晶圓表面之期望溫度的溫度下，而通常將氣體分配元件及室壁維持在適當地低於期望反應溫度之溫度下，以防止氣體過早反應。因此，熱量係自電阻性加熱元件傳遞至晶圓承載物之底部表面並向上流經晶圓承載物至個別晶圓。熱量自晶圓及晶圓承載物傳遞至氣體分配元件及室壁。 One type of CVD apparatus that has been widely recognized in the industry uses a wafer carrier in the form of a large disk and having a plurality of wafer holding regions, each adapted to hold one wafer. The wafer carrier is supported on a mandrel within the reaction chamber such that a top surface of the wafer carrier with the exposed surface of the wafer faces upwardly toward the gas distribution component. As the mandrel rotates, the gas is directed down onto the top surface of the wafer carrier and through the top surface toward the periphery of the wafer carrier. The gas system used is evacuated from the reaction chamber via a crucible disposed below the wafer carrier. The wafer carrier is maintained at a desired elevated temperature by a heating element, a resistive heating element that is typically disposed beneath the bottom surface of the wafer carrier. The heating elements are maintained at a temperature above the desired temperature of the wafer surface, while the gas distribution elements and chamber walls are typically maintained at a temperature suitably below the desired reaction temperature to prevent premature gas reactions. Thus, heat is transferred from the resistive heating element to the bottom surface of the wafer carrier and up through the wafer carrier to the individual wafers. Heat is transferred from the wafer and wafer carrier to the gas distribution component and the chamber wall.

迄今為止，儘管業內已作出了相當大之努力來設計該等系統之優化，但仍期望進一步改良。特定而言，業內仍期望提供每一晶圓表面中之較佳溫度均勻性及整個晶圓承載物中之較佳溫度均勻性。 To date, although considerable efforts have been made in the industry to design optimization of such systems, further improvements are desired. In particular, the industry still desires to provide better temperature uniformity in each wafer surface and better temperature uniformity across the wafer carrier.

本發明之一態樣提供晶圓承載物，其包括具有沿水平方向延伸之相對面向之頂部及底部表面之本體及複數個向頂部表面開口之穴，每一該穴適於固持晶圓且晶圓之頂部表面暴露於本體之頂部表面處，承載物界定垂直於水平方向之垂直方向。晶圓承載物本體合意地在承載物本體內包含一或多個熱控制特性，例如溝道或其他窄間隙。每一熱控制特性合意地沿本體內之界定表面延伸且導熱率與本體之毗鄰部分之導熱率不同。最通常而言，熱控制特性之導熱率小於本體之毗鄰部分之導熱率，從而熱控制特性將延緩沿垂直於界定表面之方向之熱傳導。舉例而言，在特性係未由固體或液體材料填充之窄溝道之情形下，溝道具有低導熱率並延緩其寬度中之熱傳導。 One aspect of the present invention provides a wafer carrier comprising a body having a top surface and a bottom surface extending in a horizontal direction and a plurality of holes opening to the top surface, each of the holes being adapted to hold the wafer and crystal The top surface of the circle is exposed at the top surface of the body and the carrier defines a vertical direction perpendicular to the horizontal direction. The wafer carrier body desirably includes one or more thermal control features, such as channels or other narrow gaps, within the carrier body. Each thermal control characteristic desirably extends along a defined surface within the body and the thermal conductivity is different from the thermal conductivity of the adjacent portion of the body. Most commonly, the thermal conductivity of the thermal control characteristics is less than the thermal conductivity of adjacent portions of the body such that thermal control characteristics will retard thermal conduction in a direction perpendicular to the defined surface. For example, in the feature system In the case of a narrow channel that is not filled with a solid or liquid material, the channel has a low thermal conductivity and retards heat conduction in its width.

在本發明之另一態樣之晶圓承載物中，至少一個熱控制特性係界定表面之至少一部分相對於垂直方向傾斜之傾斜特性。 In another aspect of the wafer carrier of the present invention, the at least one thermal control characteristic defines a slope characteristic of at least a portion of the surface that is inclined relative to the vertical direction.

本發明之另一態樣之晶圓承載物亦包含具有沿水平方向延伸之相對面向之頂部及底部表面的本體。本體界定承載物中心軸線、周邊區域及位於中心軸線與周邊區域之間之穴區域，在該穴區域中具有複數個向頂部表面開口之穴，每一該穴適於固持晶圓且晶圓之頂部表面暴露於本體之頂部表面處。在本發明之此態樣之晶圓承載物中，本體最佳地在穴區域與周邊區域之間包含在穴區域周圍延伸之周邊熱控制特性，該周邊熱控制特性之導熱率低於本體之毗鄰部分，從而周邊熱控制特性減小了穴區域與周邊區域之間之熱傳導。 Another aspect of the wafer carrier of the present invention also includes a body having opposing top and bottom surfaces extending in a horizontal direction. The body defines a central axis of the carrier, a peripheral region, and a pocket region between the central axis and the peripheral region, wherein the pocket region has a plurality of holes open to the top surface, each of the holes being adapted to hold the wafer and the wafer The top surface is exposed at the top surface of the body. In the wafer carrier of this aspect of the invention, the body preferably includes a peripheral thermal control characteristic extending around the cavity region between the cavity region and the peripheral region, the thermal conductivity of the peripheral thermal control property being lower than that of the body Adjacent portions, such that the peripheral thermal control properties reduce heat transfer between the pocket region and the peripheral region.

本發明之另一態樣之晶圓承載物包含本體(具有沿水平方向延伸之相對面向之頂部及底部表面)、承載物中心軸線、周邊表面及複數個穴(其向頂部表面開口且位於中心軸線與周邊表面之間)。每一該穴適於固持晶圓且晶圓之頂部表面在本體之頂部表面處暴露。本體可具有複數個穴熱控制特性。每一穴可具有至少部分地在佈置於穴下方之本體部分周圍延伸且與穴有關之穴熱控制特性。本體亦可具有在毗鄰周邊表面之承載物周圍延伸之周邊熱控制特性。熱控制特性之導熱率可低於本體之毗鄰部分，從而熱控制特性抑制沿水平方向之熱傳導。 Another aspect of the present invention includes a body (having a top surface and a bottom surface extending in opposite directions in a horizontal direction), a center axis of the carrier, a peripheral surface, and a plurality of holes (which are open to the top surface and are located at the center Between the axis and the surrounding surface). Each of the holes is adapted to hold the wafer and the top surface of the wafer is exposed at the top surface of the body. The body can have a plurality of hole heat control characteristics. Each pocket may have a hole thermal control characteristic that extends at least partially around the body portion disposed below the pocket and that is associated with the pocket. The body can also have peripheral thermal control characteristics that extend around the carrier adjacent the peripheral surface. The thermal conductivity of the thermal control feature can be lower than the adjacent portion of the body, thereby providing heat The control characteristic suppresses heat conduction in the horizontal direction.

本發明之其他態樣包含納入上述晶圓承載物之晶圓處理裝置及使用該等承載物處理晶圓之方法。 Other aspects of the invention include a wafer processing apparatus incorporating the wafer carrier and a method of processing the wafer using the carrier.

本發明之一實施例之學氣相沈積裝置包含反應室10，其具有配置於該室之一個末端的氣體分配元件12。具有氣體分配元件12之末端在本文中稱為室10之「頂部」末端。該室之此末端通常(但非必需地)按照正常重力參考框架佈置於室之頂部。因此，本文所用之向下方向係指遠離氣體分配元件12之方向，且向上方向係指室內朝向氣體分配元件12之方向，無論該等方向是否與重力向上及向下方向對準。類似地，本文參照室10及元件12之參考框架來闡述元件之「頂部表面」及「底部表面」。 A vapor deposition apparatus according to an embodiment of the present invention includes a reaction chamber 10 having a gas distribution member 12 disposed at one end of the chamber. The end with gas distribution element 12 is referred to herein as the "top" end of chamber 10. This end of the chamber is typically (but not necessarily) placed on top of the chamber in accordance with a normal gravity reference frame. Accordingly, as used herein, the downward direction refers to the direction away from the gas distribution element 12, and the upward direction refers to the direction of the chamber toward the gas distribution element 12, whether or not the directions are aligned with the upward and downward directions of gravity. Similarly, the "top surface" and "bottom surface" of the elements are described herein with reference to the reference frame of chamber 10 and component 12.

氣體分配元件12與CVD製程中欲使用之氣體之源14連接，該等氣體係(例如)載氣及反應物氣體，例如第III族金屬之源(通常係金屬有機化合物)及第V族元素之源(例如，氨氣或其他第V族氫化物)。氣體分配元件經配置以接收各種氣體且通常沿向下方向引導氣體流。氣體分配元件12合意地亦可與冷卻劑系統16連接，冷卻劑系統16經配置以使液體經由氣體分配元件循環，以在操作期間將元件溫度維持在期望溫度下。冷卻劑系統16亦經配置以使液體經由室10之壁循環，以將壁維持於期望溫度下。室10亦配備有排氣系統18，其經配置以經由在室底部或靠近室底部之埠(未展示)自室內部去除廢氣，以使氣體自氣體分配元件沿向下方向連續流動。 The gas distribution element 12 is coupled to a source 14 of a gas to be used in the CVD process, such as a carrier gas and a reactant gas, such as a source of a Group III metal (usually a metal organic compound) and a Group V element. Source (for example, ammonia or other Group V hydrides). The gas distribution element is configured to receive various gases and generally direct the flow of gas in a downward direction. The gas distribution element 12 is desirably also coupled to a coolant system 16 that is configured to circulate liquid through the gas distribution element to maintain the element temperature at a desired temperature during operation. The coolant system 16 is also configured to circulate liquid through the walls of the chamber 10 to maintain the walls at a desired temperature. The chamber 10 is also equipped with an exhaust system 18 configured to remove exhaust gases from the interior of the chamber via a chamber (not shown) at or near the bottom of the chamber to allow gas to flow along the gas distribution element Continuous flow in the downward direction.

心軸20係佈置於室內，從而心軸之中心軸線22沿向上及向下方向延伸。心軸在其頂部末端即在最靠近氣體分配元件12之心軸的末端具有接頭24。在所繪示之特定實施例中，接頭24大致係錐形元件。使心軸20與旋轉驅動機構26(例如電動馬達驅動)連接，旋轉驅動機構26經配置以使心軸圍繞軸線22旋轉。加熱元件28係安裝於室內且圍繞在接頭24下方之心軸20。該室亦提供有可打開埠30以用於***及取出晶圓承載物。上述元件可具有習用構造。舉例而言，適宜反應室可以註冊商標TURBODISC由本申請案之受讓人Plainview,New York，美國之Veeco Instruments公司銷售。 The mandrel 20 is arranged indoors such that the central axis 22 of the mandrel extends in the upward and downward directions. The mandrel has a joint 24 at its top end, i.e. at the end of the mandrel closest to the gas distribution element 12. In the particular embodiment depicted, the joint 24 is generally a tapered element. The mandrel 20 is coupled to a rotary drive mechanism 26 (eg, an electric motor drive) that is configured to rotate the mandrel about the axis 22. The heating element 28 is mounted within the chamber and surrounds the mandrel 20 below the joint 24. The chamber is also provided with an openable cassette 30 for inserting and removing wafer carriers. The above elements may have a conventional construction. For example, a suitable reaction chamber can be registered under the trademark TURBODISC, which is marketed by the assignee of the present application, Plainview, New York, Veeco Instruments, USA.

在圖1中所繪示之操作條件下，晶圓承載物32安裝於心軸之接頭24上。晶圓承載物具有包含本體之結構，該本體大致呈圓盤形式且具有垂直於頂部及底部表面延伸之中心軸線25。晶圓承載物之本體具有第一主表面(本文中稱為「頂部表面」34)及第二主表面(本文中稱為「底部表面」36)。晶圓承載物之結構亦具有接頭39，其經配置以嚙合心軸之接頭24並將晶圓承載物之本體固持在心軸上且頂部表面34向上面向氣體分配元件12，且底部表面36向下面向加熱元件28且遠離氣體分配元件。僅舉例而言，晶圓承載物本體之直徑可為約465 mm，且頂部表面34與底部表面32之間承載物的厚度可為約15.9 mm。在所闡釋之特定實施例中，接頭39係作為平截頭圓錐形凹坑形成於本體32之底部表面中。然而，如共同待決且共同受讓之美國專利公開案第2009-0155028 A1號(其揭示內容以引用方式併入本文中)中所述，晶圓承載物之該結構可包含與該本體分開所形成之轂且接頭可納入此一轂中。同樣，接頭之組態應視心軸之組態而定。 Under the operating conditions illustrated in Figure 1, the wafer carrier 32 is mounted to the mandrel 24 of the mandrel. The wafer carrier has a structure comprising a body that is generally in the form of a disk and has a central axis 25 that extends perpendicular to the top and bottom surfaces. The body of the wafer carrier has a first major surface (referred to herein as "top surface" 34) and a second major surface (referred to herein as "bottom surface" 36). The wafer carrier structure also has a joint 39 that is configured to engage the mandrel joint 24 and hold the body of the wafer carrier on the mandrel with the top surface 34 facing upward toward the gas distribution element 12 with the bottom surface 36 facing downward To the heating element 28 and away from the gas distribution element. By way of example only, the wafer carrier body can have a diameter of about 465 mm, and the thickness of the carrier between the top surface 34 and the bottom surface 32 can be about 15.9 mm. In the particular embodiment illustrated, the joint 39 is formed as a frustum conical pocket at the bottom of the body 32. In the surface of the part. However, as described in co-pending and co-pending U.S. Patent Publication No. 2009-0155028 A1, the disclosure of which is incorporated herein by reference, the structure of the wafer carrier can include separate from the body The hub formed and the joint can be incorporated into this hub. Also, the configuration of the connector should depend on the configuration of the mandrel.

本體合意地包含作為非金屬耐火第一材料之單片厚板形成之主要部分38，舉例而言，該材料選自由以下組成之群：碳化矽、氮化硼、碳化硼、氮化鋁、氧化鋁、藍寶石、石英、石墨及其組合，其含有或不含有耐火塗層，例如碳化物、氮化物或氧化物。 The body desirably comprises a major portion 38 of a single slab formed as a non-metallic refractory first material, for example, the material is selected from the group consisting of niobium carbide, boron nitride, boron carbide, aluminum nitride, oxidation. Aluminum, sapphire, quartz, graphite, and combinations thereof, with or without a refractory coating, such as carbides, nitrides or oxides.

晶圓承載物之本體具有中心區域27(其位於中心軸線25處及靠近中心軸線25處)、穴或晶圓固持區域29(其環繞中心區域)及周邊區域31(其環繞穴區域且界定本體之周邊)。周邊區域31界定在本體之最外端處之頂部表面34與底部表面36之間延伸的周邊表面33。 The body of the wafer carrier has a central region 27 (located at and near the central axis 25), a pocket or wafer holding region 29 (which surrounds the central region), and a peripheral region 31 (which surrounds the pocket region and defines the body Surroundings). The peripheral region 31 defines a peripheral surface 33 that extends between the top surface 34 and the bottom surface 36 at the outermost end of the body.

承載物之本體界定複數個向穴區域29中之頂部表面開口之圓形穴40。如圖1及3中最佳所見，本體之主要部分38界定實質上平坦之頂部表面34。主要部分38具有自頂部表面34延伸穿過主要部分到達底部表面36之孔42。次要部分44佈置於每一孔42內。佈置於每一孔內之次要部分44界定穴40之底板表面46，底板表面在頂部表面34下方凹入。次要部分44係自第二材料形成，該第二材料較佳係由以下形成之非金屬耐火材料：碳化矽、氮化硼、碳化硼、氮化鋁、氧化鋁、藍寶石、石英、石墨及其組合，其含有或不含有耐火塗層，例如碳化物、氮化物或氧化物。第二材料合意地與構成主要部分之第一材料不同。第二材料之導熱率可高於第一材料之導熱率。舉例而言，在主要部分係自石墨形成之情形下，次要部分可自碳化矽形成。次要部分44及主要部分38共同地界定本體之底部表面36。在圖3中所繪示之特定實施例中，主要部分38之底部表面係平坦的，且次要部分44之底部表面與主要部分之底部表面共平面，從而底部表面36係平坦的。 The body of the carrier defines a plurality of circular pockets 40 that open into the top surface of the pocket region 29. As best seen in Figures 1 and 3, the main portion 38 of the body defines a substantially flat top surface 34. The main portion 38 has a bore 42 that extends from the top surface 34 through the main portion to the bottom surface 36. A secondary portion 44 is disposed within each aperture 42. The secondary portion 44 disposed within each aperture defines a floor surface 46 of the pocket 40 that is recessed below the top surface 34. The secondary portion 44 is formed from a second material, preferably a non-metallic refractory material formed of: tantalum carbide, boron nitride, boron carbide, aluminum nitride, aluminum oxide, sapphire, quartz, graphite, and Combination, with or without A refractory coating such as a carbide, nitride or oxide. The second material desirably differs from the first material that forms the main portion. The thermal conductivity of the second material can be higher than the thermal conductivity of the first material. For example, where the major portion is from the formation of graphite, the secondary portion can be formed from tantalum carbide. The secondary portion 44 and the primary portion 38 collectively define a bottom surface 36 of the body. In the particular embodiment illustrated in Figure 3, the bottom surface of the main portion 38 is flat and the bottom surface of the minor portion 44 is coplanar with the bottom surface of the main portion such that the bottom surface 36 is flat.

次要部分44以摩擦方式與孔42之壁嚙合。舉例而言，次要部分可壓配合至孔中或藉由將主要部分升高至高溫並將冷次要部分***孔中進行收縮配合。合意地，所有穴皆具有均勻深度。此均勻性可易於藉由形成具有均勻厚度之所有次要部分(例如，藉由研磨或拋光次要部分)來達成。 The secondary portion 44 engages the wall of the bore 42 in a frictional manner. For example, the secondary portion can be press fit into the hole or by a shrink fit by raising the primary portion to a high temperature and inserting the cold secondary portion into the hole. Desirably, all wells have a uniform depth. This uniformity can be easily achieved by forming all minor portions of uniform thickness (e.g., by grinding or polishing a minor portion).

在每一次要部分44與主要部分38之周圍材料之間具有熱障壁48。熱障壁係導熱率低於主要部分之塊體材料之導熱率之區域。在圖3中所繪示之特定實施例中，熱障壁包含由主要部分38中界定孔42之壁中之凹槽形成之肉眼可見的間隙48，例如約100微米或更厚之間隙。此間隙含有氣體(例如空氣或在操作期間出現之製程氣體)，且由此其導熱率遠低於相鄰固體材料。 There is a thermal barrier 48 between each of the desired portion 44 and the surrounding material of the main portion 38. The thermal barrier has a thermal conductivity lower than that of the bulk portion of the bulk material. In the particular embodiment illustrated in FIG. 3, the thermal barrier wall includes a gap 48 that is visible to the naked eye formed by a recess in the wall defining the aperture 42 in the main portion 38, such as a gap of about 100 microns or more. This gap contains a gas (such as air or a process gas that occurs during operation) and thus its thermal conductivity is much lower than that of adjacent solid materials.

次要部分44及主要部分38之鄰接表面亦界定熱障壁部分。儘管該等表面在宏觀尺度上彼此鄰接，但各表面皆不完全平滑。因此，在鄰接表面部分之間具有微觀氣體填充間隙。該等間隙亦將阻礙次要部分44與主要部分38之間之熱傳導。 The abutment surfaces of the secondary portion 44 and the primary portion 38 also define a thermal barrier portion. Although the surfaces are adjacent to each other on a macroscopic scale, the surfaces are not completely smooth. Therefore, there is a microscopic gas filling gap between the abutting surface portions. These gaps will also hinder the relationship between the secondary portion 44 and the main portion 38. Heat Conduction.

如參照圖2及3所最佳瞭解，每一穴40具有沿垂直方向延伸之穴軸線68，其垂直於頂部及底部表面34、36且平行於晶圓承載物之中心軸線25。與每一穴有關之熱障壁48完全在該穴中與穴周邊對準之穴軸線68之周圍延伸。在此實施例中，每一熱障壁48沿理論界定表面65延伸，理論界定表面65係呈與穴軸線68共軸之正圓柱體形式且具有等於或幾乎等於穴40半徑之半徑。形成熱障壁48(例如間隙48)及次要部分44及主要部分38中鄰接表面之特性沿界定表面65方向之尺寸遠大於該等特性沿垂直於界定表面之方向的尺寸。熱障壁48之導熱率小於本體之毗鄰部分之導熱率，亦即，小於主要部分38及次要部分44之導熱率。因此，熱障壁48延緩了沿垂直於界定表面之方向(亦即，平行於頂部及底部表面34、36之水平方向)之熱傳導。 As best understood with respect to Figures 2 and 3, each pocket 40 has a pocket axis 68 extending in a vertical direction that is perpendicular to the top and bottom surfaces 34, 36 and parallel to the central axis 25 of the wafer carrier. The thermal barrier 48 associated with each pocket extends completely around the axis 68 of the pocket that is aligned with the periphery of the pocket. In this embodiment, each thermal barrier 48 extends along a theoretically defined surface 65 that is in the form of a right cylinder that is coaxial with the axis 68 and has a radius equal to or nearly equal to the radius of the cavity 40. The characteristics of the formation of the thermal barrier 48 (e.g., gap 48) and the abutment surfaces of the minor portion 44 and the major portion 38 in the direction of the defining surface 65 are much larger than the dimensions of the features in a direction perpendicular to the defining surface. The thermal barrier 48 has a thermal conductivity that is less than the thermal conductivity of adjacent portions of the body, that is, less than the thermal conductivity of the primary portion 38 and the secondary portion 44. Thus, the thermal barrier 48 retards thermal conduction along a direction perpendicular to the defined surface (i.e., parallel to the horizontal direction of the top and bottom surfaces 34, 36).

本發明此實施例之晶圓承載物進一步包含佈置於承載物本體之穴區域29及周邊區域31之間的周邊熱控制特性或熱障壁41。在此實施例中，周邊熱障壁41係延伸至本體之主要部分38中之溝道。如本揭示內容中參照晶圓承載物之特性所使用，術語「溝道」意指晶圓承載物內延伸至晶圓承載物之表面且具有實質上大於其寬度之深度之間隙。在此實施例中，溝道41係形成於單一整體元件(亦即本體之主要部分38)內。同樣，在此實施例中，溝道41並未由任何固體或液體材料填充，且由此將經周圍氛圍(例如，在承載物位於室外側時之空氣或在承載物位於室內時之製程氣體)填充。溝道沿界定表面45延伸，該界定表面45係呈圍繞軸線25旋轉之表面之形式，在此情形下係與晶圓承載物之中心軸線25同心之正圓柱體。在溝道之情形下，界定表面可視為與溝道壁等距之表面。換言之，溝道43之深度尺寸d係垂直於晶圓承載物之頂部及底部表面且平行於晶圓承載物之中心軸線。溝道41垂直於表面45之寬度方向尺寸w小於溝道平行於界定表面之尺寸。 The wafer carrier of this embodiment of the present invention further includes peripheral thermal control features or thermal barriers 41 disposed between the pocket regions 29 and the peripheral regions 31 of the carrier body. In this embodiment, the peripheral thermal barrier 41 extends into the channel in the main portion 38 of the body. As used in this disclosure with reference to the characteristics of a wafer carrier, the term "channel" means a gap extending within the wafer carrier to the surface of the wafer carrier and having a depth substantially greater than its width. In this embodiment, the channel 41 is formed in a single unitary component (i.e., the main portion 38 of the body). Also, in this embodiment, the channel 41 is not filled with any solid or liquid material and thus will pass through the surrounding atmosphere (eg, air when the carrier is on the outdoor side or process gas when the carrier is indoors) Body) fill. The channel extends along a delimiting surface 45 in the form of a surface that rotates about the axis 25, in this case a right cylinder that is concentric with the central axis 25 of the wafer carrier. In the case of a channel, the defined surface can be considered as a surface equidistant from the channel walls. In other words, the depth dimension d of the channel 43 is perpendicular to the top and bottom surfaces of the wafer carrier and parallel to the central axis of the wafer carrier. The dimension 41 of the channel 41 perpendicular to the width direction of the surface 45 is smaller than the dimension of the channel parallel to the defining surface.

承載物進一步包含與穴有關之鎖50。鎖可如在2010年8月13日提出申請之美國專利申請案第12/855,739號及2011年8月4日提出申請之相關國際申請案第PCT/US2011/046567號(該等申請案之揭示內容皆以引用方式併入本文中)中更詳細地論述般進行組態。鎖50係可選的且可省去；在下文之本揭示內容中所論述之其他承載物省去鎖。鎖50較佳係自導熱率低於次要部分44之導熱率且較佳低於主要部分38之導熱率之耐火材料形成。舉例而言，鎖可自石英形成。每一鎖包含呈垂直圓柱形軸形式之中間部分52(圖3)及呈圓盤形式之底部部分54。每一鎖之底部部分54界定面向上之支撐表面56。每一鎖進一步包含橫向於中間部分之軸線突出之頂部部分58。頂部部分並不圍繞中間部分52之軸線對稱。每一鎖之頂部部分58界定上覆鎖之支撐表面56但與支撐表面間隔開之面向下之鎖表面60。因此，每一鎖界定表面56與60之間之間隙62。每一鎖固定於晶圓承載物上從而鎖可在圖3中所展示之操作位置(其中鎖之頂部部分58在穴上方突出)與非操作位置(其中頂部部分並不在穴上方突出) 之間移動。 The carrier further includes a lock 50 associated with the pocket. PCT/US2011/046567, the disclosure of which is hereby incorporated by reference in its entirety, the entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire content The content is incorporated herein by reference in more detail. The lock 50 is optional and may be omitted; other carriers discussed in the following disclosure dispense with locks. The lock 50 is preferably formed from a refractory material having a thermal conductivity lower than that of the minor portion 44 and preferably lower than the thermal conductivity of the main portion 38. For example, the lock can be formed from quartz. Each lock includes an intermediate portion 52 (Fig. 3) in the form of a vertical cylindrical axis and a bottom portion 54 in the form of a disk. The bottom portion 54 of each lock defines an upwardly facing support surface 56. Each lock further includes a top portion 58 that projects transversely to the axis of the intermediate portion. The top portion is not symmetrical about the axis of the intermediate portion 52. The top portion 58 of each lock defines a downwardly facing locking surface 60 that is overlying the support surface 56 of the lock but spaced apart from the support surface. Thus, each lock defines a gap 62 between surfaces 56 and 60. Each lock is secured to the wafer carrier such that the lock can be in the operational position shown in Figure 3 (where the top portion 58 of the lock protrudes above the pocket) and the non-operative position (where the top portion does not protrude above the pocket) Move between.

在操作中，承載物裝載有圓形圓盤樣晶圓70。在一或多個與每一穴有關之鎖50處於其非操作位置處時，將晶圓置於穴中，從而晶圓之底部表面72擱置於鎖之支撐表面56上。鎖之支撐表面共同地支撐在穴之底板表面46上方之晶圓的底部表面72，從而在晶圓之底部表面與穴之底板表面之間具有間隙73(圖3)，且從而晶圓之頂部表面74與承載物之頂部表面34共平面或幾乎共平面。選擇承載物(包含鎖)之尺寸，從而在晶圓之邊緣或周邊表面76與鎖之中間部分52之間具有極小餘隙。鎖之中間部分由此將晶圓定中心於穴內，從而晶圓邊緣與穴壁之間之距離在晶圓周邊之周圍實質上係均勻的。 In operation, the carrier is loaded with a circular disc-like wafer 70. When one or more locks 50 associated with each pocket are in their inoperative positions, the wafer is placed in the pocket such that the bottom surface 72 of the wafer rests on the support surface 56 of the lock. The support surface of the lock collectively supports the bottom surface 72 of the wafer above the bottom surface 46 of the pocket such that there is a gap 73 between the bottom surface of the wafer and the bottom surface of the pocket (Fig. 3), and thus the top of the wafer Surface 74 is coplanar or nearly coplanar with the top surface 34 of the carrier. The carrier (including the lock) is sized to have a very small gap between the edge or peripheral surface 76 of the wafer and the intermediate portion 52 of the lock. The middle portion of the lock thereby centers the wafer within the cavity such that the distance between the edge of the wafer and the wall of the cavity is substantially uniform around the periphery of the wafer.

使鎖處於操作位置，從而每一鎖之頂部部分58及面向下之鎖表面60(圖3)在穴上方且由此在晶圓之頂部表面74上方向內突出。鎖表面60佈置於高於支撐表面56之垂直位準處。因此，晶圓嚙合於支撐表面56於鎖表面之間，且受到相對於承載物之向上或向下移動之限制。鎖之頂部及底部元件合意地儘可能地小，從而該等元件僅接觸晶圓表面中毗鄰每一晶圓之周邊之極小部分。舉例而言，鎖表面及支撐表面可僅嚙合數平方毫米之晶圓表面。 The lock is placed in the operative position such that the top portion 58 of each lock and the downwardly facing lock surface 60 (Fig. 3) project above the pocket and thereby in the direction of the top surface 74 of the wafer. The lock surface 60 is disposed at a higher level than the support surface 56. Thus, the wafer engages the support surface 56 between the lock surfaces and is constrained by upward or downward movement relative to the carrier. The top and bottom components of the lock are desirably as small as possible so that the components only contact a very small portion of the wafer surface adjacent the perimeter of each wafer. For example, the lock surface and the support surface can only engage a few square millimeters of wafer surface.

通常，將晶圓裝填於承載物上，而承載物位於反應室外側。使用習用機器人裝置(未展示)將承載物(上面具有晶圓)裝填至反應室中，從而承載物之接頭39與心軸之接頭24嚙合，且承載物之中心軸線25與心軸之軸線22。心軸及承載物圍繞此公共軸線旋轉。端視所採用之特定製程，該旋轉可以數百轉數/分鐘或更高轉數/分鐘進行。 Typically, the wafer is loaded onto a carrier while the carrier is located outside of the reaction chamber. The carrier (with wafers thereon) is loaded into the reaction chamber using a conventional robotic device (not shown) such that the connector 39 of the carrier engages the connector 24 of the mandrel and the central axis 25 of the carrier and the axis 22 of the mandrel . Mandrel and The carrier rotates about this common axis. Looking at the particular process used, the rotation can be performed in hundreds of revolutions per minute or more revolutions per minute.

啟動氣體源14以將製程氣體及載氣供應至氣體分配元件12，從而該等氣體向下流向晶圓承載物及晶圓，並大致沿徑向向外流經承載物之頂部表面34及晶圓之所暴露頂部表面74。將氣體分配元件12及室10之壁維持於相對較低溫度下以抑制氣體在該等表面處發生反應。 The gas source 14 is activated to supply process gas and carrier gas to the gas distribution component 12 such that the gases flow down the wafer carrier and wafer and flow radially outward through the top surface 34 of the carrier and the wafer. The top surface 74 is exposed. The walls of the gas distribution element 12 and chamber 10 are maintained at relatively low temperatures to inhibit gas from reacting at the surfaces.

啟動加熱器28以將承載物及晶圓加熱至期望製程溫度，對於某些化學氣相沈積製程而言，該期望製程溫度可為約500℃至1200℃。熱量主要藉由輻射熱傳遞自加熱器傳遞至承載物本體之底部表面36。熱量藉由傳導向上流經承載物本體之主要部分38到達本體之頂部表面34。熱量亦向上流經晶圓承載物之次要部分44，穿過穴之底板表面及晶圓之底部表面之間之間隙73，並流經晶圓到達晶圓之頂部表面74。熱量藉由輻射自本體及晶圓之頂部表面傳遞至室10之壁且傳遞至氣體分配元件12，且自晶圓承載物之周邊表面33傳遞至室壁。熱量且亦自晶圓承載物及晶圓傳遞至製程氣體。 The heater 28 is activated to heat the carrier and wafer to a desired process temperature, which may be from about 500 ° C to 1200 ° C for certain chemical vapor deposition processes. Heat is transferred from the heater to the bottom surface 36 of the carrier body primarily by radiant heat transfer. Heat flows up through the main portion 38 of the carrier body to the top surface 34 of the body. Heat also flows upward through the minor portion 44 of the wafer carrier, through the gap 73 between the bottom surface of the cavity and the bottom surface of the wafer, and through the wafer to the top surface 74 of the wafer. Heat is transferred from the top surface of the body and wafer to the wall of chamber 10 and transmitted to gas distribution element 12 and from the peripheral surface 33 of the wafer carrier to the chamber wall. Heat is also transferred from the wafer carrier and wafer to the process gas.

製程氣體在晶圓之頂部表面處發生反應以處理晶圓。舉例而言，在化學氣相沈積製程中，製程氣體在晶圓頂部表面上形成沈積物。通常，自結晶材料形成晶圓，且沈積製程係晶格間距類似於晶圓材料之結晶材料之磊晶沈積。 The process gas reacts at the top surface of the wafer to process the wafer. For example, in a chemical vapor deposition process, process gases form deposits on the top surface of the wafer. Typically, the wafer is formed from a crystalline material and the deposition process lattice spacing is similar to the epitaxial deposition of crystalline material of the wafer material.

出於製程均勻性，每一晶圓之頂部表面之溫度應在晶圓之整個頂部表面上保持恆定，且等於承載物上之其他晶圓之溫度。為達成此情形，每一晶圓之頂部表面74之溫度應等於承載物頂部表面34之溫度。承載物頂部表面之溫度取決於熱量穿過本體之主要部分38之傳遞速率，而晶圓頂部表面之溫度取決於熱量穿過次要部分44、間隙73及晶圓本身之傳遞速率。次要部分44之高導熱率及所得低熱阻補償間隙73之高熱阻，從而將晶圓頂部表面維持於實質上等於承載物頂部表面之溫度之溫度下。此將晶圓邊緣與承載物之周圍部分之間之熱傳遞最小化，且由此有助於在每一晶圓之整個頂部表面上維持均勻溫度。為提供此效應，穴46之底板表面之溫度必須高於主要部分38之毗鄰部分。本體中次要部分44及與主要部分38之間之熱障壁48將沿水平方向在次要部分44與主要部分38之間的熱傳導最小化，且由此將自次要部分44至主要部分之熱損失最小化。此有助於維持穴之底板表面與承載物頂部表面之間之此溫度差。另外，在穴周邊處承載物中水平熱傳遞之減小亦有助於減小緊緊圍繞穴之承載物頂部表面之局部加熱。如下文進一步所論述，承載物頂部表面中緊緊圍繞穴之彼等部分往往會變得比承載物頂部表面之其他部分更熱。藉由減小此效應，熱障壁會促進更均勻沈積。 For process uniformity, the temperature of the top surface of each wafer should be constant across the entire top surface of the wafer and equal to the other wafers on the carrier. The temperature. To achieve this, the temperature of the top surface 74 of each wafer should be equal to the temperature of the top surface 34 of the carrier. The temperature of the top surface of the carrier depends on the rate of heat transfer through the major portion 38 of the body, while the temperature of the top surface of the wafer depends on the rate of heat transfer through the secondary portion 44, the gap 73, and the wafer itself. The high thermal conductivity of the secondary portion 44 and the resulting high thermal resistance compensates for the high thermal resistance of the gap 73 to maintain the top surface of the wafer at a temperature substantially equal to the temperature of the top surface of the carrier. This minimizes heat transfer between the wafer edge and the surrounding portion of the carrier and thereby helps maintain a uniform temperature across the entire top surface of each wafer. To provide this effect, the temperature of the bottom surface of the pocket 46 must be higher than the adjacent portion of the main portion 38. The thermal barrier 48 between the secondary portion 44 and the main portion 38 in the body will minimize thermal conduction between the secondary portion 44 and the primary portion 38 in the horizontal direction, and thus will be from the secondary portion 44 to the primary portion. Thermal losses are minimized. This helps to maintain this temperature difference between the floor surface of the pocket and the top surface of the carrier. In addition, the reduction in horizontal heat transfer in the load at the periphery of the pocket also helps to reduce localized heating of the top surface of the carrier that is tightly surrounding the pocket. As discussed further below, portions of the top surface of the carrier that closely surround the pocket tend to become hotter than other portions of the top surface of the carrier. By reducing this effect, the thermal barrier promotes more uniform deposition.

因晶圓承載物本體之周邊部分31靠近室10之壁佈置，故晶圓承載物之周邊部分往往會以較高速率將熱量傳遞至室壁，且由此往往會在低於晶圓承載物之其他部分之溫度下運行。此往往會冷卻承載物本體中靠近穴區域29之外側且最靠近周邊區域之部分。周邊熱障壁41減小了自穴區域至周邊區域之水平熱傳遞，且由此減小了穴區域上之冷卻效應。此繼而減小了穴區域內之溫度差。儘管周邊熱障壁將增加周邊區域31與穴區域之間之溫度差，但此溫度差並不不利地影響製程。氣體向外流經周邊區域，且由此通過較冷周邊區域之氣體並不衝擊所處理之任一晶圓。迄今為止，在實踐中，藉由使加熱元件28(圖1)不均勻來補償來自晶圓承載物之周邊至室壁之熱傳遞，從而將更多熱量傳遞至周邊區域及穴區域之外部部分。此方式可結合所展示之周邊熱障壁使用。然而，周邊熱障壁減小了對於該補償之需要。 Since the peripheral portion 31 of the wafer carrier body is disposed near the wall of the chamber 10, the peripheral portion of the wafer carrier tends to transfer heat to the chamber wall at a higher rate, and thus tends to be lower than the wafer carrier. Run at other temperatures. This tends to cool the portion of the carrier body that is adjacent to the outer side of the pocket region 29 and that is closest to the peripheral region. The peripheral thermal barrier 41 is reduced from the acupoint area to The horizontal heat transfer of the peripheral region, and thereby the cooling effect on the cavity region. This in turn reduces the temperature difference within the cavity area. Although the peripheral thermal barrier will increase the temperature difference between the peripheral region 31 and the pocket region, this temperature difference does not adversely affect the process. The gas flows outward through the peripheral region, and thus the gas passing through the cooler peripheral region does not impact any of the wafers being processed. Heretofore, in practice, heat transfer from the periphery of the wafer carrier to the chamber wall is compensated by making the heating element 28 (Fig. 1) non-uniform, thereby transferring more heat to the peripheral region and the outer portion of the pocket region. . This approach can be used in conjunction with the surrounding thermal barriers shown. However, the perimeter thermal barrier reduces the need for this compensation.

如2010年8月13日提出申請之上述美國專利申請案第12/855,739號及2011年8月4日提出申請之相應國際申請案第PCT/US2011/046567號中更詳細地論述，鎖50可保持每一晶圓定中心於有關穴內並抵抗因晶圓彎曲產生之向上移動而維持晶圓邊緣。該等效應促進了至晶圓之更均勻熱傳遞。 The lock 50 can be discussed in more detail in the above-mentioned U.S. Patent Application Serial No. 12/855,739, filed on Aug. 13, 2010, and the corresponding International Application No. PCT/US2011/046567, filed on Jan. 4, 2011. The wafer edge is maintained centered in the relevant cavity and resists upward movement due to wafer bowing. These effects promote a more uniform heat transfer to the wafer.

在另一變化形式(圖4)中，可藉由襯套348將承載物本體之次要部分344安裝至主要部分338上，該等襯套係自石英或導熱率低於主要部分及次要部分之導熱率之另一材料形成。此處同樣，次要部分合意地其導熱率高於主要部分。襯套用作次要部分與主要部分之間之熱障壁部分。襯套及次要部分之間及襯套與主要部分之間之固-固界面提供額外熱障壁。在此變化形式中，襯套界定穴之垂直壁342。 In another variation (Fig. 4), the secondary portion 344 of the carrier body can be mounted to the main portion 338 by a bushing 348 that is derived from quartz or has a lower thermal conductivity than the primary portion and secondary Part of the thermal conductivity of another material is formed. Here again, the secondary part desirably has a higher thermal conductivity than the main part. The bushing serves as a thermal barrier portion between the secondary portion and the main portion. The solid-solid interface between the bushing and the secondary portion and between the bushing and the main portion provides an additional thermal barrier. In this variation, the bushing defines a vertical wall 342 of the pocket.

圖5之實施例與上文參照圖1-3論述之實施例類似，只是每一次要部分444包含直徑小於主要部分438中之相應孔442之本體443，從而提供間隙448作為熱障壁。每一次要部分亦包含緊密配合於主要部分438中之頭部445以維持次要部分與孔442之同心性。 The embodiment of Figure 5 is similar to the embodiment discussed above with reference to Figures 1-3, except that Each desired portion 444 includes a body 443 having a smaller diameter than the corresponding aperture 442 in the main portion 438, thereby providing a gap 448 as a thermal barrier. Each of the portions also includes a head 445 that fits snugly into the main portion 438 to maintain concentricity of the minor portion with the aperture 442.

圖6之晶圓承載物包含類似於上文參照圖1-3所論述之承載物之主要部分538及次要部分544。然而，圖6之承載物本體包含環繞次要部分且佈置於每一次要部分與主要部分之間之環樣邊界部分502。邊界部分502之導熱率與主要部分及次要部分之導熱率不同。如所圖解說明，邊界部分在每一穴之周邊下方對準。在另一變化形式中，邊界部分可在圍繞每一穴之頂部表面534部分下方對準。可獨立地選擇邊界部分之導熱率以抵抗到達或來自晶圓邊緣之熱傳遞。舉例而言，在頂部表面534之等部分往往會熱於晶圓之情形下，邊界部分之導熱率可低於主要部分之導熱率。 The wafer carrier of Figure 6 contains a major portion 538 and a minor portion 544 that are similar to the carriers discussed above with reference to Figures 1-3. However, the carrier body of Figure 6 includes a ring-like boundary portion 502 that surrounds the secondary portion and is disposed between each desired portion and the primary portion. The thermal conductivity of the boundary portion 502 is different from the thermal conductivity of the primary portion and the secondary portion. As illustrated, the boundary portions are aligned below the perimeter of each pocket. In another variation, the boundary portion can be aligned below a portion of the top surface 534 surrounding each pocket. The thermal conductivity of the boundary portion can be independently selected to resist heat transfer to or from the edge of the wafer. For example, where the portion of the top surface 534 tends to be hot to the wafer, the thermal conductivity of the boundary portion can be lower than the thermal conductivity of the main portion.

部分地繪示於圖7中之本發明另一實施例之晶圓承載物具有包含耐火材料之整體主要部分238的本體，該整體主要部分界定本體之頂部表面234及底部表面236。主要部分界定本體之頂部表面中所形成之穴240。每一穴具有底板表面246以及周向壁表面(其圍繞穴240)及面向上之晶圓支撐表面260(其在高於底板表面246之垂直位準處在穴周圍延伸)。穴圍繞垂直穴軸線268大致對稱。呈溝道形式之熱障壁248在穴周邊下方之軸線268周圍延伸。在此實施例中，溝道248向承載物本體之頂部表面234開口；其與構成頂部表面之一部分之晶圓支撐表面260相交。溝道248具有呈與穴軸線268同心之正圓柱體形式之界定表面。溝道248自穴底板表面246幾乎完全向下延伸至晶圓承載物之底部表面236，但未達到底部表面。溝道實質上圍繞承載物本體中界定穴底板表面246之次要部分244。 The wafer carrier of another embodiment of the invention, partially illustrated in FIG. 7, has a body comprising an integral major portion 238 of refractory material that defines a top surface 234 and a bottom surface 236 of the body. The main portion defines a pocket 240 formed in the top surface of the body. Each pocket has a bottom plate surface 246 and a circumferential wall surface (which surrounds the pocket 240) and an upwardly facing wafer support surface 260 (which extends around the pocket at a vertical level above the bottom surface 246). The pockets are generally symmetrical about a vertical pocket axis 268. A thermal barrier 248 in the form of a channel extends around the axis 268 below the periphery of the cavity. In this embodiment, the channel 248 is open to the top surface 234 of the carrier body; it intersects the wafer support surface 260 that forms part of the top surface. Channel 248 has A defined surface in the form of a right cylinder that is concentric with the axis 268 of the cavity. The channel 248 extends from the hole bottom surface 246 almost completely down to the bottom surface 236 of the wafer carrier, but does not reach the bottom surface. The channel substantially surrounds a minor portion 244 of the carrier body defining a hole bottom surface 246.

在操作期間，溝道248阻抑沿水平方向之熱傳導。儘管次要部分244與主要部分238彼此整體形成，但在次要部分與主要部分之間仍具有溫度差，且仍需要阻抑水平熱傳導。參照圖8可理解此需要，圖8繪示與圖7之承載物類似但不含有熱障壁之習用晶圓承載物。在將晶圓270'佈置於穴中時，在晶圓與穴底板表面246'之間具有間隙273'。間隙273內之氣體之導熱率實質上低於晶圓承載物之材料，且由此使次要部分與晶圓絕熱。在操作期間，熱量向上穿過晶圓承載物傳導並散失至承載物頂部表面234'及晶圓頂部表面274'之周圍。間隙用作阻擋自下伏晶圓之承載物部分244'至晶圓之垂直熱流之絕熱體。此意味著在底板表面246'之位準處，部分244'熱於主要部分238'之緊緊毗鄰部分。因此，熱量自部分244'水平流動至部分238'，如藉由圖8中之箭頭HF所示意性指示。此增加了主要部分238中緊緊圍繞穴之部分之溫度，從而頂部表面234'中緊緊圍繞穴之部分S'熱於頂部表面234'中遠離穴之其他部分R'。另外，水平熱流往往會冷卻穴底板表面246'。該冷卻並不均勻，從而穴底板表面中靠近穴軸線268'之部分熱於遠離軸線之部分。由於間隙273'之絕熱效應，晶圓頂部表面274'冷於承載物頂部表面234。穴底板表面246'因水平熱傳導所引起之冷卻會增大此效應。另外，穴底板表面之不均勻冷卻導致晶圓頂部表面274'上之溫度不均勻，其中晶圓頂部表面之中心WC'熱於晶圓頂部表面之周邊WP'。 During operation, channel 248 suppresses heat transfer in the horizontal direction. Although the secondary portion 244 and the main portion 238 are integrally formed with each other, there is still a temperature difference between the secondary portion and the main portion, and it is still necessary to suppress horizontal heat conduction. This need is understood with reference to Figure 8, which shows a conventional wafer carrier similar to the carrier of Figure 7 but without thermal barriers. When the wafer 270' is placed in the cavity, there is a gap 273' between the wafer and the hole bottom surface 246'. The thermal conductivity of the gas within the gap 273 is substantially lower than the material of the wafer carrier and thereby insulates the secondary portion from the wafer. During operation, heat is conducted upwardly through the wafer carrier and is lost to the periphery of the carrier top surface 234' and the wafer top surface 274'. The gap acts as a thermal insulator that blocks the vertical heat flow from the carrier portion 244' of the underlying wafer to the wafer. This means that at the level of the bottom surface 246', the portion 244' is hot to the immediately adjacent portion of the main portion 238'. Thus, heat flows horizontally from portion 244' to portion 238', as indicated by the arrow HF in FIG. This increases the temperature of the portion of the main portion 238 that closely surrounds the pocket such that the portion S' of the top surface 234' that is tightly surrounding the pocket is hotter than the other portion R' of the top surface 234' away from the pocket. Additionally, horizontal heat flow tends to cool the floor surface 246' of the hole. This cooling is not uniform, so that portions of the surface of the hole bottom surface that are closer to the axis of the hole 268' are hotter than portions away from the axis. Due to the adiabatic effect of the gap 273', the wafer top surface 274' is cooler than the carrier top surface 234. Hole bottom surface 246' due to horizontal heat conduction The resulting cooling will increase this effect. In addition, uneven cooling of the surface of the substrate causes uneven temperature on the top surface 274' of the wafer, wherein the center WC' of the top surface of the wafer is hot to the periphery WP' of the top surface of the wafer.

該等效應繪示於圖9之實心曲線202中，該實心曲線係晶圓頂部表面之頂部表面溫度對距穴軸線之距離之圖線。同樣，晶圓頂部表面(點WC'及WP')實質上冷於承載物頂部表面(點R'及S')，且在點WC'與WP'之間具有顯著溫度差。點S'熱於點R'。該等溫度差會減小製程均勻性。 These effects are illustrated in the solid curve 202 of Figure 9, which is a plot of the top surface temperature of the top surface of the wafer versus the distance from the axis of the cavity. Similarly, the top surface of the wafer (points WC' and WP') is substantially cooler than the top surface of the carrier (points R' and S') and has a significant temperature difference between points WC' and WP'. Point S' is hotter than point R'. These temperature differences reduce process uniformity.

在圖7之晶圓承載物中，熱障壁248阻抑該等效應。因阻擋了來自次要部分244之水平熱傳導，故底板表面246及由此晶圓頂部表面274較熱且溫度更接近均勻。如由圖9中之虛線曲線204所展示，點WC及WP之溫度幾乎相等，且接近承載物頂部表面上點R及S處之溫度。同樣，靠近穴之點S處之溫度接近遠離穴之點R處之溫度。 In the wafer carrier of Figure 7, thermal barrier 248 suppresses these effects. The bottom surface 246 and thus the wafer top surface 274 are hotter and the temperature is more nearly uniform because the horizontal heat transfer from the secondary portion 244 is blocked. As shown by the dashed curve 204 in Figure 9, the temperatures of points WC and WP are nearly equal and are close to the temperatures at points R and S on the top surface of the carrier. Similarly, the temperature at the point S near the hole approaches the temperature at the point R away from the hole.

另一實施例之晶圓承載物包含界定複數個穴740之整體本體850，在圖10中僅展示一個穴。每一穴740具有佈置於底板表面746上方之支撐表面756及圍繞穴之底切周邊壁742。穴具有靠近穴周邊在穴軸線768周圍延伸之外部熱障壁或溝道600。溝道600與上文參照圖7所論述之溝道248類似。如圖7之承載物中，溝道600向晶圓承載物之頂部開口但並不延伸穿過晶圓承載物底部860之壁。溝道600與周邊壁742與壁810(其形成支撐表面之內部邊緣)之間之支撐表面756相交。此處同樣，溝道600實質上垂直且通常呈與穴740之軸線768同心之正圓柱體之形式。僅舉例而言，溝道 600之寬度△w可為各種值，包含(例如)約0.5微米至約10,000微米、約1微米至約7,000微米、約1微米至約5,000微米、約1微米至約3,000微米、約1微米至約1,000微米或約1微米至約500微米。在特定晶圓承載物設計中，特定溝道600之所選寬度△w可端視以下因素而有所變化：預期晶圓處理條件、用於將材料沈積於擬藉由晶圓承載物固持之晶圓上之方案及在晶圓處理期間晶圓承載物之預期熱特徵。 The wafer carrier of another embodiment includes an integral body 850 defining a plurality of pockets 740, only one of which is shown in FIG. Each pocket 740 has a support surface 756 disposed above the bottom surface 746 and an undercut peripheral wall 742 surrounding the pocket. The pocket has an outer thermal barrier or channel 600 extending around the pocket axis 768 near the periphery of the pocket. Channel 600 is similar to channel 248 discussed above with respect to FIG. In the carrier of Figure 7, the channel 600 is open to the top of the wafer carrier but does not extend through the wall of the wafer carrier bottom 860. The channel 600 intersects the support surface 756 between the perimeter wall 742 and the wall 810 (which forms the inner edge of the support surface). Here again, the channel 600 is substantially vertical and generally in the form of a right cylinder that is concentric with the axis 768 of the pocket 740. By way of example only, the channel The width Δw of 600 can be various values including, for example, from about 0.5 microns to about 10,000 microns, from about 1 micron to about 7,000 microns, from about 1 micron to about 5,000 microns, from about 1 micron to about 3,000 microns, from about 1 micron to About 1,000 microns or from about 1 micron to about 500 microns. In a particular wafer carrier design, the selected width Δw of a particular channel 600 can vary depending on factors such as expected wafer processing conditions for depositing material to be held by the wafer carrier. The solution on the wafer and the expected thermal characteristics of the wafer carrier during wafer processing.

晶圓承載物進一步包含在外部障壁或溝道600內側於穴軸線768周圍延伸之內部熱障壁或溝道610。因此，溝道610之直徑小於穴40。溝道610與晶圓承載物之底部表面860相交，從而溝道向晶圓承載物之底部開口但並不向晶圓承載物之頂部開口。溝道或熱障壁610係傾斜熱障壁，其具有相對於溝道之頂部及底部表面傾斜之界定表面。換言之，溝道之深度尺寸d與晶圓承載物之頂部及底部表面成傾斜角度。在所繪示之實施例中，溝道610之界定表面611大致呈與穴軸線768同心之錐體部分形式，且溝道610與底部表面860之相交點呈與穴軸線同心之圓形形式。溝道610之界定表面與底部表面相交之角度Θ可介於約3度至約幾乎90度之間。僅舉例而言，溝道610之寬度△w可為各種值，包含(例如)約0.5微米至約10,000微米、約1微米至約7,000微米、約1微米至約5,000微米、約1微米至約3,000微米、約1微米至約1,000微米或約1微米至約500微米。在特定晶圓承載物設計中，特定溝道610之所選寬度△w可端視以下因素而有所變化：預期晶圓處理條件、用於將材料沈積於擬藉由晶圓承載物固持之晶圓上之方案及在晶圓處理期間晶圓承載物之預期熱特徵。 The wafer carrier further includes an internal thermal barrier or channel 610 extending around the hole axis 768 inside the outer barrier or channel 600. Therefore, the diameter of the channel 610 is smaller than the hole 40. The channel 610 intersects the bottom surface 860 of the wafer carrier such that the channel opens to the bottom of the wafer carrier but does not open to the top of the wafer carrier. The channel or thermal barrier 610 is a sloped thermal barrier having a defined surface that is inclined relative to the top and bottom surfaces of the channel. In other words, the depth dimension d of the channel is at an oblique angle to the top and bottom surfaces of the wafer carrier. In the illustrated embodiment, the defining surface 611 of the channel 610 is generally in the form of a cone portion concentric with the axis 768 of the hole, and the point of intersection of the channel 610 and the bottom surface 860 is in the form of a circle concentric with the axis of the hole. The angle of intersection of the defined surface of the channel 610 with the bottom surface may be between about 3 degrees and about 90 degrees. By way of example only, the width Δw of the channel 610 can be various values including, for example, from about 0.5 microns to about 10,000 microns, from about 1 micron to about 7,000 microns, from about 1 micron to about 5,000 microns, from about 1 micron to about 3,000 microns, from about 1 micron to about 1,000 microns or from about 1 micron to about 500 microns. In a particular wafer carrier design, the selected width Δw of the particular channel 610 can be terminated It varies depending on factors such as the expected wafer processing conditions, the solution used to deposit the material on the wafer to be held by the wafer carrier, and the expected thermal characteristics of the wafer carrier during wafer processing.

外部溝道600以與上文所論述類似之方式阻礙在晶圓承載物本體中下伏晶圓70之部分744與本體850之剩餘部分間沿水平方向的熱傳導。傾斜熱障壁或溝道610阻礙沿水平方向之熱傳導且亦阻礙沿垂直方向之熱傳導。該兩種效應之平衡將取決於角度Θ。因此，溝道610將相對於穴底板之其他部分減小靠近穴底板表面746之中心之溫度，且由此將減小在晶圓頂部表面之中心處及靠近該中心處之溫度。 The outer channel 600 blocks heat transfer in the horizontal direction between the portion 744 of the underlying wafer 70 and the remainder of the body 850 in the wafer carrier body in a manner similar to that discussed above. Tilting the thermal barrier or channel 610 impedes thermal conduction in the horizontal direction and also hinders thermal conduction in the vertical direction. The balance between the two effects will depend on the angle Θ. Thus, the channel 610 will reduce the temperature relative to the other portion of the hole bottom plate near the center of the hole bottom surface 746, and thereby will reduce the temperature at and near the center of the wafer top surface.

圖11之晶圓承載物與圖10相同，只是內部傾斜溝道620向晶圓承載物之頂部開口且並不向底部開口。因此，溝道620延伸穿過穴之底板表面746，從而其與間隙73相連。但溝道620並不延伸穿過晶圓承載物850之底部表面860。 The wafer carrier of Figure 11 is the same as Figure 10 except that the inner inclined channel 620 is open to the top of the wafer carrier and is not open to the bottom. Thus, the channel 620 extends through the bottom surface 746 of the pocket such that it is coupled to the gap 73. However, the channel 620 does not extend through the bottom surface 860 of the wafer carrier 850.

圖12之晶圓承載物與圖10之晶圓承載物相同，只是外部溝道630(圖12)與穴中恰在晶圓支撐表面756內側之底板表面746相交，從而溝道之一個壁與臺階表面810在晶圓支撐表面之內側邊緣處連續。 The wafer carrier of Figure 12 is the same as the wafer carrier of Figure 10 except that the outer channel 630 (Figure 12) intersects the bottom surface 746 of the cavity just inside the wafer support surface 756 such that one of the walls The step surface 810 is continuous at the inner edge of the wafer support surface.

圖13之晶圓承載物與圖12之承載物類似，只是內部傾斜溝道620向晶圓承載物之頂部開口而非向底部開口。溝道620與穴底板表面746相交且暴露於間隙73，但並不延伸穿過晶圓承載物850之底部表面860。 The wafer carrier of Figure 13 is similar to the carrier of Figure 12 except that the inner inclined channel 620 is open to the top of the wafer carrier rather than to the bottom. The channel 620 intersects the hole bottom surface 746 and is exposed to the gap 73 but does not extend through the bottom surface 860 of the wafer carrier 850.

圖14之晶圓承載物與圖10之承載物類似，但具有外部溝道640(其係傾斜溝道)。外部溝道640與晶圓支撐表面752在晶圓支撐表面752與周邊壁742之接合點處或靠近該接合點處相交。溝道640之界定表面係呈錐體部分之形式並在與水平平面成角度β下延伸。溝道640並不與晶圓承載物底部860相交。角度β較佳地介於約90度至約30度之間。 The wafer carrier of Figure 14 is similar to the carrier of Figure 10, but has an outer channel 640 (which is a slanted channel). The outer channel 640 is opposite the wafer support surface 752 The wafer support surface 752 intersects the junction of the perimeter wall 742 or near the junction. The defined surface of the channel 640 is in the form of a cone portion and extends at an angle β to the horizontal plane. Channel 640 does not intersect wafer carrier bottom 860. The angle β is preferably between about 90 degrees and about 30 degrees.

圖15之晶圓承載物亦與圖10之承載物類似，但具有與穴底板表面746相交並在與水平平面成角度α下延伸之外部傾斜溝道650。在此實施例中，外部溝道亦向晶圓承載物之頂部開口但並不向底部開口。因此，溝道與間隙73相連但並不延伸穿過晶圓承載物850之底部表面860。溝道650大致呈與穴之垂直軸線同心之錐體部分形式，且經佈置成與水平平面成角度α。角度α合意地為約90度至約10度，較小角度由並不延伸至有角溝道610中之有角溝道650限制。 The wafer carrier of Figure 15 is also similar to the carrier of Figure 10, but has an outer inclined channel 650 that intersects the hole bottom surface 746 and extends at an angle a from the horizontal plane. In this embodiment, the outer channel is also open to the top of the wafer carrier but not to the bottom. Thus, the channel is connected to the gap 73 but does not extend through the bottom surface 860 of the wafer carrier 850. The channel 650 is generally in the form of a cone portion that is concentric with the vertical axis of the pocket and is arranged at an angle a to the horizontal plane. The angle a desirably is from about 90 degrees to about 10 degrees, with the smaller angle being limited by the angular channel 650 that does not extend into the angled channel 610.

圖16展示圖10中之配置之另一變化形式，其中在緊鄰穴之軸線周圍之區域中自晶圓承載物之底部去除體積900。如同在申請中且共同受讓之美國專利公開申請案第2010-0055318號中所揭示(其揭示內容以引用方式併入本文中)，晶圓承載物之熱傳導可藉由改變其厚度而變化。因此，晶圓承載物中下伏穴軸線768處之穴底板表面746之相對較薄區段707之熱傳導實質上將大於晶圓承載物的其他區段。因熱量主要係藉由輻射而非傳導傳遞至晶圓承載物之底部，故所去除體積900不會明顯地使晶圓承載物之此部分絕熱。因此，穴底板表面之中心將具有高於其他部分之溫度。突出邊緣709將傾向於阻擋來自區段711之輻射，從而使得底板表面746之相應區段較冷。此配置可用於(例如)晶圓傾向於在穴中心處自穴之底板表面746彎曲之情形。在此情形下，在穴中心處間隙73之熱傳導將低於靠近穴邊緣處間隙之熱傳導。穴底板表面上之不均勻溫度分佈將抵抗間隙之不均勻傳導。可藉由選擇性增厚晶圓承載物以減小其傳導來獲得相反效應。 Figure 16 shows another variation of the configuration of Figure 10 in which the volume 900 is removed from the bottom of the wafer carrier in a region immediately adjacent the axis of the pocket. The heat transfer of the wafer carrier can be varied by varying its thickness, as disclosed in the co-pending U.S. Patent Application Serial No. 2010-0055318, the disclosure of which is incorporated herein by reference. Thus, the thermal conduction of the relatively thin section 707 of the hole bottom surface 746 at the undercut axis 768 in the wafer carrier will be substantially greater than the other sections of the wafer carrier. Since the heat is primarily transferred to the bottom of the wafer carrier by radiation rather than conduction, the removed volume 900 does not significantly insulate this portion of the wafer carrier. Therefore, the center of the surface of the hole bottom plate will have a higher temperature than the other portions. The protruding edge 709 will tend to block radiation from the segment 711 such that the corresponding segment of the floor surface 746 is cooler. This configuration can be used, for example, for crystal The circle tends to bend from the bottom surface 746 of the hole at the center of the hole. In this case, the heat transfer at the gap 73 at the center of the cavity will be lower than the heat transfer near the gap at the edge of the hole. The uneven temperature distribution on the surface of the hole bottom plate will resist uneven conduction of the gap. The opposite effect can be obtained by selectively thickening the wafer carrier to reduce its conduction.

如上文參照圖10所論述，諸如溝道610(圖10)等傾斜溝道沿垂直方向減小熱傳導，且由此可減小晶圓承載物表面中上覆傾斜溝道之彼等部分(例如穴底板表面之部分)之溫度。亦可使用相對於晶圓承載物之水平平面傾斜之界定表面形成除溝道外之熱障壁，例如上文參照圖3所論述之障壁48。另外，晶圓承載物可提供有在局部增加導熱率而非降低導熱率之熱特性。在上述實施例中，溝道及間隙實質上不含任何固體或液體材料，從而該等溝道及間隙由存在於環境中之氣體(例如在操作期間室中之製程氣體)填充。該等氣體之導熱率低於晶圓承載物之固體材料。然而，溝道或其他間隙可填充有非金屬耐火材料，該非金屬耐火材料係(例如)碳化矽、石墨、氮化硼、碳化硼、氮化鋁、氧化鋁、藍寶石、石英及其組合，其含有或不含有耐火塗層(例如碳化物、氮化物或氧化物)或含有耐火金屬。若在溝道或間隙中形成固體填充物從而固體填充物與晶圓承載物之周圍材料之間之界面不含間隙，且若固體填充物之導熱率高於周圍材料，則經填充溝道或間隙之導熱率大於晶圓承載物之周圍部分。在此情形下，經填充溝道或間隙將形成具有傳導性且與上述熱障壁以相反方式發揮作用之特性。本揭示內容中所用之術語「熱控制特性」包含熱障壁及具有增強傳導性之特性。 As discussed above with respect to FIG. 10, an inclined channel, such as channel 610 (FIG. 10), reduces thermal conduction in a vertical direction, and thereby can reduce portions of the wafer carrier surface that are overlying the inclined channel (eg, The temperature of the part of the surface of the hole. A thermal barrier, other than the channel, may be formed using a defined surface that is inclined relative to a horizontal plane of the wafer carrier, such as barrier 48 discussed above with respect to FIG. In addition, the wafer carrier can be provided with thermal characteristics that locally increase thermal conductivity rather than reduce thermal conductivity. In the above embodiments, the channels and gaps are substantially free of any solid or liquid material such that the channels and gaps are filled by gases present in the environment, such as process gases in the chamber during operation. The thermal conductivity of the gases is lower than the solid material of the wafer carrier. However, the channel or other gap may be filled with a non-metallic refractory material such as tantalum carbide, graphite, boron nitride, boron carbide, aluminum nitride, aluminum oxide, sapphire, quartz, and combinations thereof, With or without a refractory coating (such as carbides, nitrides or oxides) or with refractory metals. If a solid filler is formed in the channel or gap so that the interface between the solid filler and the surrounding material of the wafer carrier does not contain a gap, and if the thermal conductivity of the solid filler is higher than the surrounding material, the channel is filled or The thermal conductivity of the gap is greater than the surrounding portion of the wafer carrier. In this case, the filled channel or gap will form a conductive and conductive function in the opposite way to the thermal barrier described above. Sex. The term "thermal control characteristics" as used in this disclosure includes thermal barriers and properties that enhance conductivity.

在上述實施例中，與穴有關之熱控制特性完全在穴軸線周圍延伸且圍繞該軸線對稱，從而每一熱特性之界定表面係在穴軸線周圍旋轉之完整表面(例如圓柱體或錐體)。然而，熱控制特性可不對稱、間斷或二者兼有。因此，如圖17中所展示，溝道801包含三個各自部分地在穴軸線868周圍延伸之片段801a、801b及801c。該等片段彼此由位置803處之間斷分離。另一溝道805以一系列單獨孔807之形式形成，從而溝道在每一對毗鄰孔之間間斷。溝道中之有助於保持晶圓承載物之機械完整性。 In the above embodiments, the thermal control properties associated with the pockets extend completely around the axis of the pocket and are symmetrical about the axis such that the defined surface of each thermal characteristic is a complete surface (eg, a cylinder or cone) that rotates about the axis of the pocket. . However, the thermal control characteristics can be asymmetric, intermittent, or both. Thus, as shown in FIG. 17, channel 801 includes three segments 801a, 801b, and 801c that each extend partially around acupoint axis 868. The segments are separated from each other by a position 803. The other channel 805 is formed in the form of a series of individual apertures 807 such that the channel is interrupted between each pair of adjacent apertures. This helps maintain the mechanical integrity of the wafer carrier.

如圖18中所見，單一溝道901a僅部分地在穴940a之穴軸線968a周圍延伸。此溝道同與其他穴940b、940c及940d有關之溝道901b、901c及901d連續，從而溝道901a-901d形成在四個相鄰穴之組周圍延伸之單一連續溝道。恰佈置於穴940a周邊外側之另一溝道903a部分地在穴周圍延伸且連結至與相鄰穴有關之相應溝道903b-903d。在其他變化形式(未展示)中，端視晶圓承載物上之穴之密度，單一連續溝道可在兩個或三個相鄰穴之組周圍延伸，或可在五個或更多個相鄰穴之組周圍延伸。穴之間之連續橋之位置以及連續溝道之長度及寬度可有所變化。連續橋可(例如)自連續溝道或單獨孔(例如，圖17中所展示之孔807)系列形成。 As seen in Figure 18, the single channel 901a extends only partially around the pocket axis 968a of the pocket 940a. The channel is continuous with the channels 901b, 901c and 901d associated with the other pockets 940b, 940c and 940d such that the channels 901a-901d form a single continuous channel extending around the group of four adjacent pockets. Another channel 903a disposed just outside the periphery of the pocket 940a extends partially around the pocket and is coupled to a respective channel 903b-903d associated with the adjacent pocket. In other variations (not shown), depending on the density of the pockets on the wafer carrier, a single continuous channel may extend around a group of two or three adjacent pockets, or may be in five or more Extending around the group of adjacent holes. The position of the continuous bridge between the pockets and the length and width of the continuous channel may vary. The continuous bridge can be formed, for example, from a series of continuous channels or individual holes (e.g., holes 807 shown in Figure 17).

晶圓承載物表面上之多個穴之位置可影響晶圓承載物上之溫度分佈。舉例而言，如圖18中所展示，穴940a-940d 圍繞晶圓頂部表面之較小區域909。如上文結合圖9所闡釋，每一穴中之晶圓及間隙之絕熱效應往往會使得熱量水平流動至承載物之相鄰區域。因此，區域909往往會變得熱於承載物頂部表面之其他區域。溝道903a-903d會減小此效應。 The location of the plurality of pockets on the surface of the wafer carrier can affect the temperature distribution across the wafer carrier. For example, as shown in Figure 18, holes 940a-940d A smaller area 909 around the top surface of the wafer. As explained above in connection with Figure 9, the adiabatic effects of the wafers and gaps in each cavity tend to cause heat to flow horizontally to adjacent regions of the carrier. Thus, region 909 tends to become hotter to other regions of the top surface of the carrier. Channels 903a-903d will reduce this effect.

熱控制特性由此可根據需要用於控制整體承載物表面以及個別晶圓之表面上之溫度分佈。舉例而言，由於相鄰穴及晶圓之效應，因此個別晶圓之表面上之溫度分佈可能往往會在穴軸線周圍不對稱。在穴軸線周圍不對稱之熱控制特性(例如溝道)可抵抗此趨勢。使用本文所論述之熱控制特性，可在穴之軸線周圍沿徑向及角向方向達成任一期望晶圓溫度分佈。 The thermal control characteristics can thus be used to control the overall carrier surface and the temperature profile across the surface of the individual wafers as needed. For example, the temperature distribution on the surface of individual wafers may tend to be asymmetrical around the axis of the cavity due to the effects of adjacent holes and wafers. Asymmetric thermal control characteristics (eg, channels) around the axis of the cavity resist this trend. Using the thermal control features discussed herein, any desired wafer temperature profile can be achieved in the radial and angular directions around the axis of the pocket.

溝道未必為通常遵循穴或穴內之支撐表面之大體輪廓旋轉之表面。因此，溝道可具有達成晶圓上之期望溫度特徵之任一其他幾何形狀。該等幾何形狀包含(例如)圓、橢圓、離軸(或亦稱為失準)圓、離軸橢圓、蛇形(同軸及離軸(或亦稱為失準))、螺旋(同軸及離軸(或亦稱為失準))、回旋曲線(羊角形螺旋)(同軸及離軸(或亦稱為失準))、拋物線(同軸及離軸)、矩形(同軸及離軸)、三角形(同軸及離軸(或亦稱為失準))、多邊形、離軸多邊形及諸如此類等，或係隨機設計及對準之溝道，其並非基於幾何學但可基於在特定晶圓承載物上評估之標準晶圓之熱特徵。上述幾何結構亦可為不對稱形式。可存在兩個或更多個幾何結構。 The channel does not necessarily have to be a surface that generally follows the general contour of the support surface within the pocket or cavity. Thus, the channel can have any other geometry that achieves the desired temperature characteristics on the wafer. Such geometric shapes include, for example, circles, ellipses, off-axis (or also misaligned) circles, off-axis ellipses, serpentines (coaxial and off-axis (or also referred to as misalignment)), spirals (coaxial and detached) Axis (or also known as misalignment)), convoluted curve (Cangoptical spiral) (coaxial and off-axis (or also known as misalignment)), parabola (coaxial and off-axis), rectangular (coaxial and off-axis), triangle (coaxial and off-axis (or also known as misalignment)), polygons, off-axis polygons, and the like, or channels that are randomly designed and aligned, not based on geometry but based on a particular wafer carrier Evaluate the thermal characteristics of standard wafers. The above geometry may also be in an asymmetrical form. There may be two or more geometries.

在一些情形下，溝道可延伸完全穿過晶圓承載物，從而溝道向晶圓承載物之頂部及底部開口。此可(例如)以圖19-21中所展示之方式來達成。 In some cases, the channel can extend completely through the wafer carrier, thereby The channel is open to the top and bottom of the wafer carrier. This can be achieved, for example, in the manner shown in Figures 19-21.

因此，在圖19中，溝道660自晶圓支撐表面756延伸並經由晶圓承載物底部850離開。支撐件920佈置於在穴軸線周圍間隔開之位置處突出部分(ledge)922上之溝道內。支撐件920可由絕熱體材料或耐火材料製得，該耐火材料係(例如)如上文所論述之鉬、鎢、鈮、鉭、錸以及其合金(包含其他金屬)。另一選擇為，溝道660可完全填充有固體材料。 Thus, in FIG. 19, the channel 660 extends from the wafer support surface 756 and exits through the wafer carrier bottom 850. The support member 920 is disposed within a channel on the ledge 922 at a location spaced around the axis of the pocket. Support 920 may be fabricated from a thermal insulator material or a refractory material such as molybdenum, tungsten, tantalum, niobium, tantalum, and alloys thereof (including other metals) as discussed above. Alternatively, channel 660 can be completely filled with solid material.

圖20展示溝道670之另一實例，該溝道自支撐表面756延伸並經由晶圓承載物底部850離開。可將支撐件920置於穴軸線周圍各個點處之突出部分922及924上。 20 shows another example of a channel 670 that extends from the support surface 756 and exits through the wafer carrier bottom 850. Support members 920 can be placed over projections 922 and 924 at various points around the axis of the pocket.

圖21展示溝道680之另一實例，該溝道延伸穿過穴底板表面46且亦延伸穿過晶圓承載物底部860。此處同樣，可將支撐件920置於整個溝道中各個點處之突出部分922上。 21 shows another example of a channel 680 that extends through the hole floor surface 46 and also extends through the wafer carrier bottom 860. Here again, the support member 920 can be placed over the protruding portion 922 at various points in the entire channel.

在圖16、19、20及21中之每一者中，垂直線701及703示意性繪示佈置於承載物之穴內之晶圓邊緣。 In each of Figures 16, 19, 20, and 21, vertical lines 701 and 703 schematically depict wafer edges disposed within the pockets of the carrier.

本發明另一實施例之晶圓承載物(圖22)包含具有主要部分1038及與每一穴1040對準之次要部分1044之本體。每一次要部分1044與主要部分1038整體形成。內部溝道1010及外部溝道1012與每一穴有關。每一該等溝道大致呈與穴之垂直軸線1068同心之正圓柱體形式。外部溝道1012靠近穴1040之周邊佈置且在內部溝道1010周圍延伸。內部溝道1010向晶圓承載物本體之底部表面1036開口且自底部表面向上延伸至末端表面1011。外部溝道1012向晶圓承載物之頂部表面1034開口且向下延伸至末端表面1013。末端表面1013佈置於末端表面1011下方，從而內部溝道與外部溝道彼此重疊且共同地界定其間之大致垂直圓柱形壁1014。此配置在次要部分與主要部分之間提供極有效熱障壁。次要部分1044與主要部分1038之間經由晶圓承載物之固體材料之熱傳導必須遵循細長路徑穿過壁1014之垂直區域。在反轉溝道時，獲得相同效應，其中內部溝道向頂部表面開口且外部溝道向底部表面開口。同樣，在內部溝道、外部溝道或二者係傾斜溝道(例如，如圖14中所見之大致錐形溝道)之情形下或在溝道中之一者或兩者由除溝道外之熱障壁代替之情形下，可獲得相同效應。 A wafer carrier (Fig. 22) of another embodiment of the present invention includes a body having a main portion 1038 and a minor portion 1044 aligned with each of the pockets 1040. Each desired portion 1044 is integrally formed with the main portion 1038. Internal channel 1010 and external channel 1012 are associated with each cavity. Each of the channels is generally in the form of a right cylinder that is concentric with the vertical axis 1068 of the pocket. The outer channel 1012 is disposed adjacent the periphery of the pocket 1040 and extends around the inner channel 1010. The inner channel 1010 opens to the bottom surface 1036 of the wafer carrier body and from the bottom surface It extends up to the end surface 1011. The outer channel 1012 opens to the top surface 1034 of the wafer carrier and extends down to the end surface 1013. The end surface 1013 is disposed below the end surface 1011 such that the inner and outer channels overlap each other and collectively define a generally vertical cylindrical wall 1014 therebetween. This configuration provides an extremely efficient thermal barrier between the secondary and main sections. Thermal conduction between the secondary portion 1044 and the primary portion 1038 via the solid material of the wafer carrier must follow the elongated path through the vertical region of the wall 1014. The same effect is obtained when the channel is reversed, with the inner channel opening to the top surface and the outer channel opening to the bottom surface. Similarly, in the case where the inner channel, the outer channel, or both are inclined channels (eg, a substantially tapered channel as seen in FIG. 14) or in one or both of the channels, The same effect can be obtained in the case of a thermal barrier.

本發明另一實施例之晶圓承載物(圖23)亦包含具有主要部分1138且具有與每一穴1140對準之次要部分1144之本體，次要部分1144與主要部分1138整合在一起。包含上部溝道部分1112(向承載物之頂部表面1134開口)及下部溝道部分1111(向承載物之底部表面1136開口)之溝道在穴之垂直軸線1168周圍延伸。上部溝道部分1112終止於較低溝道部分1111上方，從而呈固體材料之相對較薄網片1115形式且與次要部分1144及主要部分1138整合在一起之支撐件延伸穿過上部及下部部分之間之溝道。支撐件1115佈置於截斷次要部分1144之質量中心1119之水平平面1117處或靠近該水平平面處。換言之，支撐件1115沿垂直方向與次要部分1114之質量中心對準。在操作中，在晶圓承載物圍繞晶圓承載物之中心軸線1125高速旋轉時，次要部分1144上之加速力或離心力將沿平面1117自中心軸線向外引導。因支撐件1115與加速力之平面對準，故支撐件1115並不發生彎曲。若晶圓承載物本體之材料實質上壓縮強於拉伸，則此尤其合意，此乃因彎曲負載可將顯著拉伸施加於材料之部分上。舉例而言，石墨之壓縮係拉伸之約3至4倍。因支撐件1115並不經受由加速力所致之明顯彎曲負載，故可使用相對較薄之支撐件。此會減小穿過支撐件之熱傳導且增強由溝道所提供之熱隔離，此繼而增強晶圓及晶圓承載物整體中之熱均勻性。 The wafer carrier (Fig. 23) of another embodiment of the present invention also includes a body having a main portion 1138 and having a minor portion 1144 aligned with each of the pockets 1140, the secondary portion 1144 being integrated with the main portion 1138. A channel including an upper channel portion 1112 (opening toward the top surface 1134 of the carrier) and a lower channel portion 1111 (opening toward the bottom surface 1136 of the carrier) extends around the vertical axis 1168 of the pocket. The upper channel portion 1112 terminates above the lower channel portion 1111 such that the support member in the form of a relatively thin mesh 1115 of solid material and integrated with the secondary portion 1144 and the main portion 1138 extends through the upper and lower portions The channel between. The support 1115 is disposed at or near the horizontal plane 1117 of the center of mass 1119 of the cut-off secondary portion 1144. In other words, the support member 1115 is aligned with the center of mass of the secondary portion 1114 in the vertical direction. In operation, the wafer carrier surrounds the crystal When the central axis 1125 of the circular carrier rotates at a high speed, the acceleration or centrifugal force on the secondary portion 1144 will be directed outwardly from the central axis along the plane 1117. Since the support member 1115 is aligned with the plane of the acceleration force, the support member 1115 does not bend. This is particularly desirable if the material of the wafer carrier body is substantially more compressive than the stretch, because a significant stretch can be applied to portions of the material due to the bending load. For example, the compression of graphite is about 3 to 4 times greater than the stretching. Since the support member 1115 is not subjected to a significant bending load due to the acceleration force, a relatively thin support member can be used. This reduces thermal conduction through the support and enhances thermal isolation provided by the channel, which in turn enhances thermal uniformity in the wafer and wafer carrier as a whole.

在圖23之特定實施例中，將支撐件1115繪示為在穴軸線1168周圍完全延伸之連續網片形式。然而，可應用相同之支撐件與次要部分質量中心之垂直位置之對準原理，其中支撐件包含除連續網片外之元件，例如在本體之次要部分1144與主要部分1138之間延伸之較小隔離橋。 In the particular embodiment of FIG. 23, the support member 1115 is depicted in the form of a continuous web that extends completely around the axis of the pocket 1168. However, the alignment principle of the vertical position of the same support and the secondary portion of the center of mass can be applied, wherein the support comprises elements other than the continuous web, for example extending between the minor portion 1144 of the body and the main portion 1138. Small isolation bridge.

在另一變化形式(未展示)中，上部溝道部分1112可由覆蓋元件覆蓋，該覆蓋元件合意地自導熱率實質上低於晶圓承載物整體之材料之材料形成。使用此一蓋子會避免可由溝道或溝道中向頂部表面開口之部分引起之任一氣體流中斷。此一覆蓋元件可與向晶圓承載物之頂部表面開口之任一溝道一起使用。舉例而言，如圖3中所展示之周邊溝道41可以向頂部表面開口之單一溝道形式或以如圖3中所見納入上部及下部溝道部分之複合材料溝道形式形成，且可使用蓋子覆蓋頂部表面中之溝道開口。 In another variation (not shown), the upper channel portion 1112 can be covered by a cover member desirably formed from a material having a thermal conductivity substantially lower than the material of the wafer carrier as a whole. The use of such a cover avoids the interruption of any gas flow that can be caused by a portion of the channel or channel that opens to the top surface. This cover element can be used with any channel that opens to the top surface of the wafer carrier. For example, the peripheral channel 41 as shown in FIG. 3 may be formed in the form of a single channel that is open to the top surface or in the form of a composite channel that incorporates the upper and lower channel portions as seen in FIG. 3, and may be used The cover covers the channel opening in the top surface.

圖24展示本發明另一實施例之另一晶圓承載物。在此實施例中，每一穴具有底切周邊壁934。亦即，在遠離承載物之頂部表面902之向下方向中，周邊壁934自穴之中心軸線938向外傾斜。每一穴亦具有佈置於穴之底板表面926上方之支撐表面930。在操作中，晶圓918位於穴916中，從而晶圓支撐於支撐表面930上之底板表面上方以在底板表面926與晶圓之間形成間隙932。在承載物圍繞承載物之軸線旋轉時，加速力使晶圓邊緣與支撐表面嚙合且將晶圓固持於穴中並與支撐表面嚙合。支撐表面930可呈環繞穴之連續輪緣之形式，或另外可以一組佈置於穴周邊周圍之間隔開之位置處之突出部分形式形成。同樣，穴之周邊壁934可提供有一組較小突出(未展示)，該等突出自周邊壁朝向穴之中心軸線938向內延伸。如共同擁有之美國公開專利申請案第2010/0055318號中更詳細所述(其揭示內容以引用方式併入本文中)，該等突出可固持在操作期間略微遠離穴之周邊壁之晶圓邊緣。 Figure 24 shows another wafer carrier of another embodiment of the present invention. In this embodiment, each of the pockets has an undercut peripheral wall 934. That is, in a downward direction away from the top surface 902 of the carrier, the perimeter wall 934 slopes outwardly from the central axis 938 of the pocket. Each pocket also has a support surface 930 disposed above the floor surface 926 of the pocket. In operation, wafer 918 is located in pocket 916 such that the wafer is supported over the surface of the substrate on support surface 930 to form a gap 932 between substrate surface 926 and the wafer. As the carrier rotates about the axis of the carrier, the acceleration forces engage the wafer edge with the support surface and hold the wafer in the pocket and engage the support surface. The support surface 930 can be in the form of a continuous rim surrounding the pocket, or alternatively can be formed as a set of projections disposed at spaced locations around the periphery of the pocket. Likewise, the peripheral wall 934 of the pocket may be provided with a set of smaller projections (not shown) that extend inwardly from the peripheral wall toward the central axis 938 of the pocket. As described in more detail in commonly-owned U.S. Patent Application Serial No. 2010/0055318, the disclosure of which is incorporated herein by reference in its entirety, the disclosures of the disclosures of .

晶圓承載物包含具有主要部分914及與每一穴916對準之次要部分912之本體。每一次要部分912與主要部分914整體形成。溝道908與每一穴有關且大致呈與穴之垂直軸線938同心之正圓柱體形式。該等908佈置於靠近穴916之周邊處或佈置於該周邊處。溝道908僅向晶圓承載物本體之底部表面904開口且自底部表面向上延伸至末端表面910。末端表面910合意地佈置於穴之底板表面926位準下方。 The wafer carrier includes a body having a main portion 914 and a minor portion 912 aligned with each of the pockets 916. Each of the main portions 912 is integrally formed with the main portion 914. Channel 908 is associated with each pocket and is generally in the form of a right cylinder that is concentric with the vertical axis 938 of the pocket. The 908 are disposed adjacent to or disposed at the periphery of the pocket 916. The channel 908 opens only to the bottom surface 904 of the wafer carrier body and extends upwardly from the bottom surface to the end surface 910. The end surface 910 is desirably disposed below the level of the bottom surface 926 of the pocket.

本發明另一實施例之晶圓承載物展示於圖25-27中。如仰視圖(圖25)中所見，承載物具有呈具有垂直承載物中心軸線2503之大致圓盤形式之本體2501。在承載物中心軸線處提供接頭2524以將承載物安裝至晶圓處理裝置之心軸上。本體具有底部表面2536(在圖25中可見)及頂部表面2534(在圖27中可見)，圖27係沿圖25中之線27-27之剖面圖且展示反轉本體。本體之周邊表面2507(圖27)係圓柱形且與承載物中心軸線2503(圖25)共軸。唇2509自毗鄰頂部表面2534之周邊表面2507向外突出。提供唇2509從而承載物可易於藉由機器人承載物處置設備(未展示)嚙合。 A wafer carrier of another embodiment of the present invention is shown in Figures 25-27. Such as As seen in the bottom view (Fig. 25), the carrier has a body 2501 in the form of a generally disc having a vertical carrier central axis 2503. A joint 2524 is provided at the center axis of the carrier to mount the carrier to the mandrel of the wafer processing apparatus. The body has a bottom surface 2536 (visible in Figure 25) and a top surface 2534 (visible in Figure 27), and Figure 27 is a cross-sectional view along line 27-27 in Figure 25 and showing the inverted body. The peripheral surface 2507 (Fig. 27) of the body is cylindrical and coaxial with the carrier central axis 2503 (Fig. 25). The lip 2509 projects outwardly from the peripheral surface 2507 adjacent the top surface 2534. The lip 2509 is provided such that the carrier can be easily engaged by a robotic carrier handling device (not shown).

承載物具有呈向底部表面2536開口之溝道2511形式之穴熱控制特性。穴溝道2511及其與承載物頂部表面上之穴之關係可實質上如上文參照圖24所展示及闡述。一個穴2540之輪廓展示於圖26中之虛線中，圖26係圖25中2626處所指示區域之詳細視圖。此處同樣，每一穴2540大致係圓形且界定垂直穴軸線2538。底部表面中之每一穴溝道2511與頂部表面中有關穴之軸線2538同心。每一穴溝道在與有關穴之周邊對準下延伸，從而每一穴溝道之中心線與穴之周邊壁一致。因此，每一穴溝道在承載物本體中佈置於有關穴2540下方之部分2513周圍延伸。在圖25-27之實施例中，所有穴2540皆係外側穴，其靠近承載物之周邊佈置，且在該等穴與承載物之周邊之間並不插進其他穴。 The carrier has a hole heat control characteristic in the form of a channel 2511 that opens to the bottom surface 2536. The cavity channel 2511 and its relationship to the pockets on the top surface of the carrier can be substantially as shown and described above with reference to FIG. The outline of one hole 2540 is shown in the dashed line in Fig. 26, and Fig. 26 is a detailed view of the area indicated at 2626 in Fig. 25. Here again, each pocket 2540 is generally circular and defines a vertical pocket axis 2538. Each of the pocket channels 2511 in the bottom surface is concentric with the axis 2538 of the aperture in the top surface. Each of the pockets extends in alignment with the periphery of the associated pocket such that the centerline of each of the pockets coincides with the perimeter wall of the pocket. Thus, each of the pockets extends around the portion 2513 below the associated pocket 2540 in the carrier body. In the embodiment of Figures 25-27, all of the pockets 2540 are outer pockets that are disposed adjacent the perimeter of the carrier and are not inserted into other pockets between the pockets and the perimeter of the carrier.

如圖25中最佳所見，與相互毗鄰之穴有關之穴溝道2511在佈置於有關穴之穴軸線2538之間的位置2517處彼此連結。在該等位置處，穴溝道實質上彼此呈切向狀態。 As best seen in Figure 25, the pocket channels 2511 associated with mutually adjacent pockets are joined to each other at a location 2517 disposed between the pocket axes 2538 of the pockets. At these locations, the pockets are substantially tangential to each other.

如圖25及26中所見，每一穴溝道具有較大間斷2519，該較大間斷沿自承載物中心軸線2501延伸穿過有關穴之軸線2538之徑向線2521佈置。換言之，每一穴溝道中之較大間斷2519位於溝道中最靠近承載物之周邊之部分處。每一穴溝道亦可具有一或多個位於其他位置處之較小間斷。 As seen in Figures 25 and 26, each of the pockets has a larger discontinuity 2519 that is disposed along a radial line 2521 extending from the carrier central axis 2501 through the axis 2538 of the associated pocket. In other words, the larger discontinuity 2519 in each of the channel channels is located at the portion of the channel that is closest to the periphery of the carrier. Each of the pockets may also have one or more smaller discontinuities at other locations.

此實施例之承載物亦包含呈與承載物中心軸線2503同心之溝道形式之周邊熱控制特性2523。此周邊溝道2523具有沿與穴溝道中之較大間斷2519相同之徑向線2521佈置之間斷2525。因此，穴溝道2511中之較大間斷2519與周邊溝道中之間斷2525對準。如圖26中最佳所見，沿徑向線2521連接每一外側穴下方之區域2513與周邊表面2507之直路徑並不通過任一熱控制特性或溝道。亦如圖26中所見，頂部表面中每一外側穴之邊界延伸至或幾乎延伸至周邊表面2507。此配置使得在承載物之頂部表面上之穴具有最大空間。 The carrier of this embodiment also includes peripheral thermal control features 2523 in the form of channels that are concentric with the carrier central axis 2503. This peripheral channel 2523 has an interrupt 2525 disposed along the same radial line 2521 as the larger discontinuity 2519 in the hole channel. Thus, the larger discontinuity 2519 in the pocket channel 2511 is aligned with the discontinuity 2525 in the peripheral channel. As best seen in Figure 26, the straight path connecting the region 2513 below each of the outer pockets along the radial line 2521 to the peripheral surface 2507 does not pass any of the thermal control characteristics or channels. As also seen in Figure 26, the boundary of each of the outer holes in the top surface extends to or nearly extends to the peripheral surface 2507. This configuration allows for a maximum of pockets on the top surface of the carrier.

圖28展示另一實施例之晶圓承載物1200之底側部分。在此實施例中，穴溝道1202包括個別孔。每一穴溝道完全在有關穴之中心軸線1212周圍延伸且由此圍繞佈置於穴下方之承載物之區域1206。類似地，包括個別孔之溝道1204完全在毗鄰穴之中心軸線1210周圍延伸，且圍繞佈置於穴下方之區域1208。溝道1202與1204相交以在佈置於毗鄰穴之軸線1210及1212之間之位置處形成單一溝道1214。 28 shows a bottom side portion of a wafer carrier 1200 of another embodiment. In this embodiment, the pocket channel 1202 includes individual apertures. Each of the pockets extends completely around the central axis 1212 of the associated pocket and thereby surrounds the region 1206 of the carrier disposed below the pocket. Similarly, the channel 1204 including individual apertures extends completely around the central axis 1210 of the adjacent pocket and surrounds the region 1208 disposed below the pocket. Channels 1202 and 1204 intersect to form a single channel 1214 at a location disposed between axes 1210 and 1212 of adjacent wells.

在此實施例中，如圖25-27之實施例中，承載物具有呈具有間斷1221之溝道1220形式之周邊熱控制特性。在此實施例中，穴溝道延伸至周邊溝道1220之間斷1221中。周邊溝道1220僅位於晶圓承載物1200之周邊表面1230中。溝道1220有助於控制晶圓承載物1200之區1222之溫度。應瞭解，自單獨孔形成之溝道1202及1204及以單一溝道形式形成之1220可以本文中所提供之其他溝道形式形成。 In this embodiment, as in the embodiment of Figures 25-27, the carrier has peripheral thermal control characteristics in the form of a channel 1220 having a discontinuity 1221. In this In the embodiment, the pockets extend into the gap 1221 of the peripheral channel 1220. The perimeter channel 1220 is only located in the peripheral surface 1230 of the wafer carrier 1200. Channel 1220 helps control the temperature of region 1222 of wafer carrier 1200. It will be appreciated that the channels 1202 and 1204 formed from separate holes and the 1220 formed in a single channel form may be formed in other channel forms provided herein.

針對溝道1204展示中心線1205a；針對溝道1202展示中心線1205b。在圖28中所繪示之實施例中，在遠離承載物之周邊表面1230之溝道區域中，溝道1202之中心線1205b位於距穴軸線1212第一半徑R₁處，從而溝道之中心線1205b大體與穴之周邊壁一致。在溝道1202中靠近承載物之周邊表面佈置之彼等區域中，在周邊溝道1220之間斷1221內，穴溝道位於距穴軸線第二半徑R₂處，R₂略小於R₁。換言之，溝道1202大致呈圓形式，該圓與穴軸線1212同心但具有靠近承載物之周邊之略平整部分。此假設穴溝道並不與承載物之周邊表面1230相交。 A centerline 1205a is shown for channel 1204; a centerline 1205b is shown for channel 1202. In the depicted embodiment of FIG. 28 embodiment, the channel region in the surface thereof remote from the periphery of the bearing of 1230, the channel centerline 1202 1205b 1212 located at a first radius from the point ₁ R axis to the center of the channel Line 1205b generally coincides with the peripheral wall of the pocket. In the region of the channel 1202 disposed adjacent the peripheral surface of the carrier, within the peripheral channel 1220 interrupt 1221, the pocket channel is located at a second radius R ₂ from the axis of the hole, R _{2 being} slightly less than R ₁ . In other words, the channel 1202 is generally circular in shape, which is concentric with the axis of the hole 1212 but has a slightly flat portion near the periphery of the carrier. This hypothetical cavity channel does not intersect the peripheral surface 1230 of the carrier.

圖29及30繪示本發明另一實施例之晶圓承載物1250之底側部分。在此實施例中，穴溝道1262、1272(圖29)以實質上連續溝道之形式形成，其中出於結構強度僅具有微小間斷1266、1268。此處同樣，每一穴溝道在承載物中佈置於頂部表面中之穴下方之區域周圍延伸。如同圖28之實施例中，穴溝道1262及1272通常係圓形且與有關穴之穴軸線同心，但具有毗鄰承載物之周邊之平整部分。 29 and 30 illustrate a bottom side portion of a wafer carrier 1250 in accordance with another embodiment of the present invention. In this embodiment, the pocket channels 1262, 1272 (Fig. 29) are formed in the form of a substantially continuous channel with only minor discontinuities 1266, 1268 for structural strength. Here again, each of the pockets extends around the area of the carrier that is disposed below the pocket in the top surface. As in the embodiment of Fig. 28, the pocket channels 1262 and 1272 are generally circular and concentric with the axis of the pocket of the associated pocket, but have a flat portion adjacent the perimeter of the carrier.

如圖30中最佳所見，在溝道1262中遠離承載物之周邊之區域中，溝道位於距有關穴之中心軸線1238第一半徑R₁ 處，從而溝道之中心線實質上與有關穴之周邊壁1240(如圖30中之虛線所見)一致。在溝道中毗鄰承載物之周邊之區域中，穴溝道位於距穴之中心較小半徑R₂處。在此實施例中，穴溝道亦延伸至周邊熱控制特性或溝道1280中之間斷1281中。溝道1262及1272匯合以在毗鄰穴之軸線之間之位置處形成單一溝道1265。應瞭解，溝道1262、1264、1272、1274及1280可以本文中所提供之其他溝道形式形成。 Best seen in FIG. 30, in the channel region away from the carrier 1262 of the surrounding things, the channel located at a distance about the center axis of the hole 1238 at a first radius R _1, the center line of the channel so that the related point substantially The perimeter wall 1240 (as seen by the dashed lines in Figure 30) is identical. In the region of the channel adjacent to the periphery of the carrier, the pocket is located at a smaller radius R ₂ from the center of the pocket. In this embodiment, the pockets also extend into the peripheral thermal control characteristics or discontinuities 1281 in the channel 1280. Channels 1262 and 1272 merge to form a single channel 1265 at a location between the axes of adjacent holes. It will be appreciated that the channels 1262, 1264, 1272, 1274, and 1280 can be formed in other channel forms provided herein.

圖31展示另一實施例之晶圓承載物1400之底側部分。在此實施例中，穴溝道1410係呈與有關穴之軸線1411同心之圓形式之實質上連續溝道，其中出於結構強度僅具有微小間斷。因此，穴溝道1410包含藉由微小間斷1430、1432及1434分離之片段1414a、1414b及1414c。此處同樣，承載物包含呈溝道1422形式之周邊熱控制特性，該溝道具有與徑向線(例如自承載物中心軸線1403延伸穿過每一外側穴之中心軸線1411)對準之間斷1423。在此實施例中，外側穴距承載物之周邊足夠遠以便穴溝道並不截斷承載物之周邊表面。 Figure 31 shows the bottom side portion of wafer carrier 1400 of another embodiment. In this embodiment, the pocket channel 1410 is a circular, substantially continuous channel concentric with the axis 1411 of the associated pocket, with only minor discontinuities due to structural strength. Thus, the pocket channel 1410 includes segments 1414a, 1414b, and 1414c separated by minute discontinuities 1430, 1432, and 1434. Here again, the carrier includes peripheral thermal control characteristics in the form of a channel 1422 having an alignment with the radial line (e.g., extending from the center axis 1411 of each outer pocket to the central axis 1411 of the outer pocket). 1423. In this embodiment, the outer acupoint is sufficiently far from the periphery of the carrier so that the cavity does not intercept the peripheral surface of the carrier.

在上文參照圖25-31所論述之每一實施例中，所有穴皆係毗鄰承載物之周邊佈置之外側穴。然而，在該等實施例之變化形式中，使用較大承載物或較***，可將額外穴佈置於外側穴與承載物中心軸線之間。該等額外穴亦可提供有穴溝道。舉例而言，圖32之承載物包含在承載物中佈置於外側穴(未展示於圖32之仰視圖中)下方之區域1371周圍延伸之外側穴溝道1362。承載物亦具有在承載物本體中佈置於內側穴(未展示)下方之部分1381周圍延伸之內側穴溝道1380。 In each of the embodiments discussed above with reference to Figures 25-31, all of the pockets are disposed adjacent to the periphery of the carrier. However, in variations of these embodiments, a larger pocket or smaller pocket may be used to position the additional pocket between the outer pocket and the center axis of the carrier. These additional holes can also provide a hole channel. For example, the carrier of Figure 32 is included in the carrier around the area 1371 disposed below the outer pocket (not shown in the bottom view of Figure 32). The outer side channel 1362 is extended. The carrier also has an inner pocket channel 1380 extending around a portion 1381 disposed below the inner pocket (not shown) in the carrier body.

各種溝道幾何形狀可彼此組合且有所變化。舉例而言，任一上述溝道可向承載物之頂部、承載物之底部或向二者開口。同樣，上文關於個別實施例所論述之其他特性可彼此組合。舉例而言，任一穴視情況可提供有參照圖1-5所論述之鎖。周邊熱控制特性未必為溝道，但可為並不延伸至承載物之頂部或底部表面之間隙，或為如熱障壁48(圖3)中所使用之固體元件之間之鄰接表面對。 The various channel geometries can be combined with each other and varied. For example, any of the above channels may be open to the top of the carrier, to the bottom of the carrier, or both. Likewise, other features discussed above with respect to individual embodiments may be combined with each other. For example, any of the cavities may be provided with locks as discussed with reference to Figures 1-5. The peripheral thermal control characteristics are not necessarily channels, but may be gaps that do not extend to the top or bottom surface of the carrier, or abutting surface pairs between solid elements as used in thermal barrier 48 (Fig. 3).

用於本發明中之另一類晶圓承載物係闡述於共同待決之美國專利申請案第13/153,679號(其於2011年6月6日提出申請且標題為「Multi-Wafer Rotating Disc Reactor With Inertial Planetary Drive」，其內容以引用方式併入本文中)中之行星晶圓承載物。 Another type of wafer carrier for use in the present invention is described in co-pending U.S. Patent Application Serial No. 13/153,679, filed on Jun. 6, 2011, and entitled "Multi-Wafer Rotating Disc Reactor With Inertial Planetary Drive, the contents of which are incorporated herein by reference.

因可利用上述特性之該等及其他變化形式及組合，故較佳實施例之上述說明應理解為闡釋而非限制本發明範圍。 The above description of the preferred embodiments is to be construed as illustrative and not restrictive.

10‧‧‧反應室 10‧‧‧Reaction room

12‧‧‧氣體分配元件 12‧‧‧ gas distribution components

14‧‧‧氣體源 14‧‧‧ gas source

16‧‧‧冷卻劑系統 16‧‧‧ coolant system

18‧‧‧排氣系統 18‧‧‧Exhaust system

20‧‧‧心軸 20‧‧‧ mandrel

22‧‧‧中心軸線 22‧‧‧ center axis

24‧‧‧接頭 24‧‧‧Connectors

25‧‧‧中心軸線 25‧‧‧ center axis

26‧‧‧旋轉驅動機構 26‧‧‧Rotary drive mechanism

27‧‧‧中心區域 27‧‧‧Central area

28‧‧‧加熱元件 28‧‧‧heating elements

29‧‧‧穴或晶圓固持區域 29‧‧‧ hole or wafer holding area

30‧‧‧可打開埠 30‧‧‧ Open 埠

31‧‧‧周邊區域 31‧‧‧ surrounding area

32‧‧‧晶圓承載物 32‧‧‧ wafer carrier

33‧‧‧周邊表面 33‧‧‧ peripheral surface

34‧‧‧頂部表面 34‧‧‧ top surface

36‧‧‧底部表面 36‧‧‧ bottom surface

38‧‧‧主要部分 38‧‧‧ main part

39‧‧‧接頭 39‧‧‧Connectors

40‧‧‧穴 40‧‧‧ points

41‧‧‧周邊熱控制特性或熱障壁 41‧‧‧ Peripheral thermal control characteristics or thermal barriers

42‧‧‧孔 42‧‧‧ hole

44‧‧‧次要部分 44‧‧‧ minor parts

45‧‧‧界定表面 45‧‧‧Defining the surface

46‧‧‧底板表面 46‧‧‧ floor surface

48‧‧‧熱障壁 48‧‧‧ Thermal barrier

52‧‧‧中間部分 52‧‧‧ middle part

54‧‧‧底部部分 54‧‧‧ bottom part

56‧‧‧支撐表面 56‧‧‧Support surface

58‧‧‧頂部部分 58‧‧‧Top part

60‧‧‧鎖表面 60‧‧‧ lock surface

62‧‧‧間隙 62‧‧‧ gap

65‧‧‧理論界定表面 65‧‧‧ theoretically defined surface

68‧‧‧穴軸線 68‧‧‧ hole axis

70‧‧‧晶圓 70‧‧‧ wafer

72‧‧‧底部表面 72‧‧‧ bottom surface

73‧‧‧間隙 73‧‧‧ gap

74‧‧‧頂部表面 74‧‧‧ top surface

76‧‧‧邊緣或周邊表面 76‧‧‧Edge or peripheral surface

234‧‧‧頂部表面 234‧‧‧ top surface

234'‧‧‧頂部表面 234'‧‧‧ top surface

236‧‧‧底部表面 236‧‧‧ bottom surface

238‧‧‧整體主要部分 238‧‧‧ the main part of the whole

238'‧‧‧主要部分 238'‧‧‧ main part

240‧‧‧穴 240‧‧‧ points

244‧‧‧次要部分 244‧‧‧ minor parts

244'‧‧‧承載物部分 244'‧‧‧bearer part

246‧‧‧底板表面 246‧‧‧ floor surface

246'‧‧‧穴底板表面 246'‧‧‧ hole floor surface

248‧‧‧熱障壁 248‧‧‧ Thermal barrier

260‧‧‧晶圓支撐表面 260‧‧‧ wafer support surface

268‧‧‧垂直穴軸線 268‧‧‧ vertical axis

268'‧‧‧穴軸線 268'‧‧‧ hole axis

270'‧‧‧晶圓 270'‧‧‧ wafer

273‧‧‧間隙 273‧‧‧ gap

273'‧‧‧間隙 273'‧‧‧ gap

274‧‧‧晶圓頂部表面 274‧‧‧ wafer top surface

274'‧‧‧晶圓頂部表面 274'‧‧‧ wafer top surface

338‧‧‧主要部分 338‧‧‧ main part

342‧‧‧垂直壁 342‧‧‧ vertical wall

344‧‧‧次要部分 344‧‧‧ minor parts

348‧‧‧襯套 348‧‧‧ bushing

442‧‧‧孔 442‧‧‧ hole

443‧‧‧本體 443‧‧‧Ontology

444‧‧‧次要部分 444‧‧‧ minor parts

448‧‧‧間隙 448‧‧‧ gap

502‧‧‧邊界部分 502‧‧‧Border section

534‧‧‧頂部表面 534‧‧‧ top surface

538‧‧‧主要部分 538‧‧‧ main part

544‧‧‧次要部分 544‧‧‧ minor parts

600‧‧‧外部熱障壁或溝道 600‧‧‧External thermal barrier or channel

610‧‧‧內部熱障壁或溝道 610‧‧‧Internal thermal barrier or channel

611‧‧‧界定表面 611‧‧‧Defining the surface

620‧‧‧內部傾斜溝道 620‧‧‧Internal inclined channel

630‧‧‧外部溝道 630‧‧‧External channel

640‧‧‧外部溝道 640‧‧‧External channel

650‧‧‧外部傾斜溝道 650‧‧‧External inclined channel

660‧‧‧溝道 660‧‧‧Channel

670‧‧‧溝道 670‧‧‧Channel

680‧‧‧溝道 680‧‧‧Channel

701‧‧‧晶圓邊緣 701‧‧‧ wafer edge

703‧‧‧晶圓邊緣 703‧‧‧ wafer edge

707‧‧‧區段 Section 707‧‧‧

709‧‧‧突出邊緣 709‧‧‧ highlight edge

711‧‧‧區段 Section 711‧‧‧

740‧‧‧穴 740‧‧ ‧

742‧‧‧周邊壁 742‧‧‧ perimeter wall

744‧‧‧部分 Section 744‧‧‧

746‧‧‧底板表面 746‧‧‧ floor surface

756‧‧‧晶圓支撐表面 756‧‧‧ wafer support surface

768‧‧‧穴軸線 768‧‧‧ hole axis

801‧‧‧溝道 801‧‧‧Channel

801a‧‧‧片段 801a‧‧‧frag

801b‧‧‧片段 801b‧‧‧frag

801c‧‧‧片段 801c‧‧‧frag

803‧‧‧位置 803‧‧‧ position

805‧‧‧溝道 805‧‧‧Channel

807‧‧‧孔 807‧‧‧ hole

810‧‧‧壁/臺階表面 810‧‧‧ wall/step surface

850‧‧‧整體本體/晶圓承載物 850‧‧‧Integral body/wafer carrier

860‧‧‧晶圓承載物底部/底部表面 860‧‧‧ wafer carrier bottom/bottom surface

868‧‧‧穴軸線 868‧‧‧ hole axis

900‧‧‧體積 900‧‧‧ volume

901a‧‧‧溝道 901a‧‧‧Channel

901b‧‧‧溝道 901b‧‧‧Channel

901c‧‧‧溝道 901c‧‧‧Channel

901d‧‧‧溝道 901d‧‧‧Channel

902‧‧‧頂部表面 902‧‧‧ top surface

903a‧‧‧溝道 903a‧‧‧Channel

903b‧‧‧溝道 903b‧‧‧Channel

903c‧‧‧溝道 903c‧‧‧Channel

903d‧‧‧溝道 903d‧‧‧Channel

904‧‧‧底部表面 904‧‧‧ bottom surface

908‧‧‧溝道 908‧‧‧Channel

909‧‧‧區域 909‧‧‧Area

910‧‧‧末端表面 910‧‧‧End surface

912‧‧‧次要部分 912‧‧‧ minor parts

914‧‧‧主要部分 914‧‧‧ main part

916‧‧‧穴 916‧‧ ‧

918‧‧‧晶圓 918‧‧‧ wafer

920‧‧‧支撐件 920‧‧‧Support

922‧‧‧突出部分 922‧‧‧ highlights

924‧‧‧突出部分 924‧‧‧ highlights

926‧‧‧底板表面 926‧‧‧ floor surface

930‧‧‧支撐表面 930‧‧‧Support surface

932‧‧‧間隙 932‧‧‧ gap

934‧‧‧周邊壁 934‧‧‧ perimeter wall

938‧‧‧中心軸線 938‧‧‧ center axis

940a‧‧‧穴 940a‧‧ ‧

940b‧‧‧穴 940b‧‧‧ hole

940c‧‧‧穴 940c‧‧‧

940d‧‧‧穴 940d‧‧‧ hole

968a‧‧‧穴軸線 968a‧‧‧ hole axis

1010‧‧‧內部溝道 1010‧‧‧Internal channel

1011‧‧‧末端表面 1011‧‧‧End surface

1012‧‧‧外部溝道 1012‧‧‧External channel

1013‧‧‧末端表面 1013‧‧‧End surface

1014‧‧‧垂直圓柱形壁 1014‧‧‧Vertical cylindrical wall

1034‧‧‧頂部表面 1034‧‧‧ top surface

1036‧‧‧底部表面 1036‧‧‧ bottom surface

1038‧‧‧主要部分 1038‧‧‧ main part

1040‧‧‧穴 1040‧‧ ‧

1044‧‧‧次要部分 1044‧‧‧ minor parts

1068‧‧‧垂直軸線 1068‧‧‧vertical axis

1111‧‧‧下部溝道部分 1111‧‧‧lower channel section

1112‧‧‧上部溝道部分 1112‧‧‧ upper channel section

1115‧‧‧支撐件 1115‧‧‧Support

1117‧‧‧水平平面 1117‧‧‧ horizontal plane

1119‧‧‧質量中心 1119‧‧‧Quality Center

1125‧‧‧中心軸線 1125‧‧‧ center axis

1134‧‧‧頂部表面 1134‧‧‧ top surface

1136‧‧‧底部表面 1136‧‧‧ bottom surface

1138‧‧‧主要部分 1138‧‧‧ main part

1140‧‧‧穴 1140‧‧ ‧

1144‧‧‧次要部分 1144‧‧‧ minor parts

1168‧‧‧垂直軸線 1168‧‧‧vertical axis

1200‧‧‧晶圓承載物 1200‧‧‧ wafer carrier

1202‧‧‧穴溝道 1202‧‧‧ hole channel

1204‧‧‧溝道 1204‧‧‧Channel

1205a‧‧‧中心線 1205a‧‧‧ center line

1205b‧‧‧中心線 1205b‧‧‧ center line

1206‧‧‧區域 1206‧‧‧Area

1208‧‧‧區域 1208‧‧‧Area

1210‧‧‧中心軸線 1210‧‧‧ center axis

1212‧‧‧中心軸線 1212‧‧‧ center axis

1214‧‧‧單一溝道 1214‧‧‧Single channel

1220‧‧‧溝道 1220‧‧‧Channel

1221‧‧‧間斷 1221‧‧‧Stop

1222‧‧‧區 District 1222‧‧‧

1230‧‧‧周邊表面 1230‧‧‧ peripheral surface

1238‧‧‧中心軸線 1238‧‧‧ center axis

1240‧‧‧周邊壁 1240‧‧‧ perimeter wall

1250‧‧‧晶圓承載物 1250‧‧‧ wafer carrier

1262‧‧‧穴溝道 1262‧‧‧ hole channel

1264‧‧‧溝道 1264‧‧‧Channel

1265‧‧‧單一溝道 1265‧‧‧Single channel

1266‧‧‧微小間斷 1266‧‧‧Small interruptions

1268‧‧‧微小間斷 1268‧‧‧Small interruptions

1272‧‧‧穴溝道 1272‧‧ ‧ channel

1274‧‧‧溝道 1274‧‧‧Channel

1280‧‧‧周邊熱控制特性或溝道 1280‧‧‧ Peripheral thermal control characteristics or channel

1281‧‧‧間斷 1281‧‧‧Stop

1362‧‧‧外側穴溝道 1362‧‧‧Outer hole channel

1371‧‧‧區域 1371‧‧‧Area

1380‧‧‧內側穴溝道 1380‧‧‧medial channel

1381‧‧‧部分 Section 1381‧‧‧

1400‧‧‧晶圓承載物 1400‧‧‧ wafer carrier

1403‧‧‧承載物中心軸線 1403‧‧‧Carriage center axis

1410‧‧‧穴溝道 1410‧‧‧ hole channel

1411‧‧‧軸線 1411‧‧‧ axis

1414a‧‧‧片段 1414a‧‧‧frag

1414b‧‧‧片段 1414b‧‧‧frag

1414c‧‧‧片段 1414c‧‧‧frag

1422‧‧‧溝道 1422‧‧‧Channel

1423‧‧‧間斷 1423‧‧‧Stop

1430‧‧‧微小間斷 1430‧‧‧Small interruptions

1432‧‧‧微小間斷 1432‧‧‧Small interruptions

1434‧‧‧微小間斷 1434‧‧‧Small interruptions

2501‧‧‧本體 2501‧‧‧ Ontology

2503‧‧‧垂直承載物中心軸線 2503‧‧‧Center of vertical load carrier

2507‧‧‧周邊表面 2507‧‧‧ peripheral surface

2509‧‧‧唇 2509‧‧‧ Lips

2511‧‧‧穴溝道 2511‧‧‧ hole channel

2513‧‧‧部分 Section 2513‧‧‧

2517‧‧‧位置 2517‧‧‧Location

2519‧‧‧較大間斷 2519‧‧‧Great break

2521‧‧‧徑向線 2521‧‧‧ radial line

2523‧‧‧周邊熱控制特性 2523‧‧‧Peripheral thermal control characteristics

2524‧‧‧接頭 2524‧‧‧Connector

2525‧‧‧間斷 2525‧‧‧Stop

2534‧‧‧頂部表面 2534‧‧‧Top surface

2536‧‧‧底部表面 2536‧‧‧ bottom surface

2538‧‧‧垂直穴軸線 2538‧‧‧ vertical axis

2540‧‧‧穴 2540‧‧ ‧

2626‧‧‧區域 2626‧‧‧Area

圖1係繪示本發明一實施例之化學氣相沈積裝置之簡單示意性剖面圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a simplified schematic cross-sectional view showing a chemical vapor deposition apparatus according to an embodiment of the present invention.

圖2係圖1裝置中所使用之晶圓承載物之圖示性俯視平面圖。 2 is a schematic top plan view of a wafer carrier used in the device of FIG. 1.

圖3係沿圖2中之線3-3截取之局部圖示性剖面圖，其繪示與晶圓結合之晶圓承載物。 3 is a partial, fragmentary, cross-sectional view taken along line 3-3 of FIG. 2 showing the wafer carrier bonded to the wafer.

圖4、5及6係繪示本發明其他實施例之晶圓承載物之一部分之局部圖示性剖面圖。 4, 5 and 6 are fragmentary cross-sectional views showing a portion of a wafer carrier of another embodiment of the present invention.

圖7係繪示本發明另一實施例之晶圓承載物之一部分之局部圖示性剖面圖。 7 is a partial, fragmentary cross-sectional view showing a portion of a wafer carrier of another embodiment of the present invention.

圖8係與圖9類似但繪示習用晶圓承載物之一部分之視圖。 Figure 8 is a view similar to Figure 9 but showing a portion of a conventional wafer carrier.

圖9係繪示在圖7及8之晶圓承載物操作期間之溫度分佈之圖。 Figure 9 is a graph showing the temperature distribution during operation of the wafer carrier of Figures 7 and 8.

圖10-16係繪示本發明其他實施例之晶圓承載物之部分之局部圖示性剖面圖。 10-16 are fragmentary cross-sectional views showing portions of a wafer carrier of another embodiment of the present invention.

圖17及18係繪示本發明其他實施例之晶圓承載物之部分之局部圖示性俯視平面圖。 17 and 18 are partial, fragmentary top plan views of portions of a wafer carrier of other embodiments of the present invention.

圖19-24係繪示本發明其他實施例之晶圓承載物之部分之局部圖示性剖面圖。 19-24 are fragmentary cross-sectional views showing portions of a wafer carrier of another embodiment of the present invention.

圖25係本發明另一實施例之晶圓承載物之圖示性仰視平面圖。 Figure 25 is a schematic bottom plan view of a wafer carrier in accordance with another embodiment of the present invention.

圖26係繪示圖25之晶圓承載物之一部分之放大局部圖示性仰視平面圖。 Figure 26 is an enlarged, fragmentary, top plan view of a portion of the wafer carrier of Figure 25.

圖27係沿圖25中之線27-27截取之局部圖示性剖面圖。 Figure 27 is a fragmentary, cross-sectional view taken along line 27-27 of Figure 25.

圖28及29係繪示本發明其他實施例之晶圓承載物之部分之局部圖示性仰視平面圖。 28 and 29 are partial, partially bottom plan views of portions of a wafer carrier of other embodiments of the present invention.

圖30係繪示圖29之晶圓承載物之一部分之放大局部圖示性仰視平面圖。 Figure 30 is an enlarged, fragmentary, top plan view of a portion of the wafer carrier of Figure 29.

圖31係繪示本發明另一實施例之晶圓承載物之一部分之局部圖示性仰視平面圖。 31 is a diagram showing a portion of a wafer carrier according to another embodiment of the present invention. Partially illustrated bottom view plan.

圖32係本發明另一實施例之晶圓承載物之圖示性仰視平面圖。 32 is a schematic bottom plan view of a wafer carrier in accordance with another embodiment of the present invention.

25‧‧‧中心軸線 25‧‧‧ center axis

27‧‧‧中心區域 27‧‧‧Central area

29‧‧‧穴或晶圓固持區域 29‧‧‧ hole or wafer holding area

31‧‧‧周邊區域 31‧‧‧ surrounding area

33‧‧‧周邊表面 33‧‧‧ peripheral surface

34‧‧‧頂部表面 34‧‧‧ top surface

36‧‧‧底部表面 36‧‧‧ bottom surface

38‧‧‧主要部分 38‧‧‧ main part

40‧‧‧穴 40‧‧‧ points

42‧‧‧孔 42‧‧‧ hole

44‧‧‧次要部分 44‧‧‧ minor parts

45‧‧‧界定表面 45‧‧‧Defining the surface

46‧‧‧底板表面 46‧‧‧ floor surface

48‧‧‧熱障壁 48‧‧‧ Thermal barrier

52‧‧‧中間部分 52‧‧‧ middle part

54‧‧‧底部部分 54‧‧‧ bottom part

56‧‧‧支撐表面 56‧‧‧Support surface

58‧‧‧頂部部分 58‧‧‧Top part

60‧‧‧鎖表面 60‧‧‧ lock surface

62‧‧‧間隙 62‧‧‧ gap

65‧‧‧理論界定表面 65‧‧‧ theoretically defined surface

68‧‧‧穴軸線 68‧‧‧ hole axis

70‧‧‧晶圓 70‧‧‧ wafer

72‧‧‧底部表面 72‧‧‧ bottom surface

73‧‧‧間隙 73‧‧‧ gap

74‧‧‧頂部表面 74‧‧‧ top surface

76‧‧‧邊緣或周邊表面 76‧‧‧Edge or peripheral surface

Claims

一種晶圓承載物，其包括具有沿水平方向延伸之相對面向之頂部及底部表面之本體及複數個向該頂部表面開口之穴，每一該穴適於固持晶圓且使該晶圓之頂部表面暴露於該本體之該頂部表面處，該承載物界定垂直於該水平方向之垂直方向，該本體包含一或多個熱控制特性，每一該特性沿該本體內之界定表面延伸且沿垂直於其界定表面之方向之導熱率與該本體中毗鄰部分的導熱率不同，至少一個該特性係其界定表面之至少一部分相對於該垂直方向傾斜之傾斜特性。 A wafer carrier comprising a body having oppositely facing top and bottom surfaces extending in a horizontal direction and a plurality of holes opening to the top surface, each of the holes being adapted to hold a wafer and top the wafer a surface exposed to the top surface of the body, the carrier defining a vertical direction perpendicular to the horizontal direction, the body comprising one or more thermal control features, each of the features extending along a defined surface within the body and along a vertical The thermal conductivity in the direction of the defined surface is different from the thermal conductivity of the adjacent portion of the body, at least one of which is a slope characteristic in which at least a portion of the defined surface is inclined relative to the vertical.

如請求項1之晶圓承載物，其中每一該特性中平行於該特性之該界定表面之尺寸大於該特性中垂直於該特性之該界定表面之尺寸。 The wafer carrier of claim 1, wherein the dimension of the defined surface parallel to the characteristic in each of the properties is greater than the dimension of the defined surface of the property perpendicular to the characteristic.

如請求項2之晶圓承載物，其中該等特性中之至少一者包含與該等頂部及底部表面中之至少一者相交之溝道。 The wafer carrier of claim 2, wherein at least one of the features comprises a channel that intersects at least one of the top and bottom surfaces.

如請求項1之晶圓承載物，其中該等特性中之至少一者之導熱率低於該本體之毗鄰部分之導熱率。 The wafer carrier of claim 1, wherein at least one of the properties has a thermal conductivity lower than a thermal conductivity of an adjacent portion of the body.

如請求項4之晶圓承載物，其中該等特性中之至少一者包含未由固體或液體材料填充之間隙。 A wafer carrier as claimed in claim 4, wherein at least one of the properties comprises a gap that is not filled with a solid or liquid material.

如請求項4之晶圓承載物，其中該本體包含複數個獨立的固體部分且至少一些該等特性包含位於至少一些該等部分之間之邊界。 The wafer carrier of claim 4, wherein the body comprises a plurality of separate solid portions and at least some of the features comprise a boundary between at least some of the portions.

如請求項1之晶圓承載物，其中至少一個該穴具有沿該垂直方向延伸之中心軸線及至少一個與該穴有關之該特性，該特性毗鄰該穴佈置且至少部分地在該穴之該中心軸線周圍延伸。 The wafer carrier of claim 1, wherein at least one of the holes has a central axis extending in the vertical direction and at least one of the features associated with the hole Optionally, the feature is disposed adjacent to the pocket and extends at least partially around the central axis of the pocket.

如請求項7之晶圓承載物，其中至少一個該穴具有至少一個與該穴有關之該傾斜特性，該傾斜特性實質上呈圍繞該穴之該中心軸線旋轉之表面的形式。 The wafer carrier of claim 7, wherein at least one of the pockets has at least one of the slope characteristics associated with the pocket, the slope characteristic being substantially in the form of a surface that rotates about the central axis of the pocket.

如請求項7之晶圓承載物，其中至少一個該穴具有該等特性中與該穴有關且至少部分地在該穴之該中心軸線周圍延伸之內部特性及該等特性中位於該等特性中之該內部特性外側的至少部分地在該穴周圍延伸之外部特性。 A wafer carrier as claimed in claim 7, wherein at least one of said pockets has internal characteristics associated with said pockets and extending at least partially around said central axis of said pockets and wherein said characteristics are in said characteristics An outer characteristic of the outer side of the inner characteristic that extends at least partially around the pocket.

如請求項9之晶圓承載物，其中該等特性中之該內部特性係傾斜特性，其實質上呈圍繞該穴之該中心軸線旋轉之表面之形式。 The wafer carrier of claim 9, wherein the internal characteristic of the properties is a tilting property that is substantially in the form of a surface that rotates about the central axis of the pocket.

如請求項1之晶圓承載物，其中該等特性中之至少一者係具有實質上垂直之界定表面之垂直特性。 A wafer carrier as claimed in claim 1, wherein at least one of the properties has a vertical characteristic of a substantially perpendicular defined surface.

如請求項1之晶圓承載物，其中該等特性中之至少一者在該等穴中之至少一者內與該本體之該頂部表面相交。 The wafer carrier of claim 1, wherein at least one of the features intersects the top surface of the body in at least one of the pockets.

如請求項12之晶圓承載物，其中每一該穴具有毗鄰該穴之周邊之晶圓支撐件，且該等特性中之至少一者與該等穴中之至少一者的該晶圓支撐件相交。 The wafer carrier of claim 12, wherein each of the holes has a wafer support adjacent to a periphery of the hole, and the wafer support of at least one of the features and at least one of the holes Pieces intersect.

如請求項11之晶圓承載物，其中該穴具有毗鄰該穴之該周邊之晶圓支撐件且該等特性中之該外部特性與該晶圓支撐件相交。 The wafer carrier of claim 11, wherein the pocket has a wafer support adjacent the perimeter of the pocket and the external characteristic of the features intersects the wafer support.

一種晶圓承載物，其包括具有沿水平方向延伸之相對面向之頂部及底部表面之本體，該本體具有垂直於該等水平方向之垂直方向及複數個向該頂部表面開口之穴，每一該穴適於固持晶圓且使該晶圓之頂部表面暴露於該本體之該頂部表面處，該本體包含一或多個溝道，每一該溝道與該本體之該等頂部及底部表面中之至少一者相交，該等溝道之導熱率與該本體之導熱率不同。 A wafer carrier comprising a body having a top surface and a bottom surface extending in a horizontal direction, the body having a water perpendicular to the water a vertical direction of the flat direction and a plurality of holes opening to the top surface, each of the holes being adapted to hold the wafer and exposing a top surface of the wafer to the top surface of the body, the body comprising one or more a channel, each of the channels intersecting at least one of the top and bottom surfaces of the body, the thermal conductivity of the channels being different from the thermal conductivity of the body.

如請求項15之晶圓承載物，其中該本體係整體本體。 The wafer carrier of claim 15 wherein the overall body of the system.

如請求項16之晶圓承載物，其中每一穴具有中心軸線且至少一個穴具有至少部分地在該穴之該中心軸線周圍毗鄰該穴之周邊延伸之周邊溝道。 The wafer carrier of claim 16, wherein each of the pockets has a central axis and the at least one pocket has a peripheral channel extending at least partially around the central axis of the pocket adjacent the perimeter of the pocket.

如請求項17之晶圓承載物，其中每一該周邊溝道完全在該穴之該中心軸線周圍延伸。 The wafer carrier of claim 17, wherein each of the peripheral channels extends completely around the central axis of the pocket.

如請求項15之晶圓承載物，其中每一該溝道之導熱率低於該本體之導熱率，藉此每一該溝道用作該本體內之熱傳導之障壁。 The wafer carrier of claim 15, wherein each of the channels has a thermal conductivity lower than a thermal conductivity of the body, whereby each of the channels serves as a barrier to heat conduction within the body.

如請求項19之晶圓承載物，其中該等溝道至少部分地不含固體或液體材料。 The wafer carrier of claim 19, wherein the channels are at least partially free of solid or liquid material.

如請求項15之晶圓承載物，其中至少一個該溝道係具有實質上垂直之深度方向之垂直溝道。 A wafer carrier as claimed in claim 15, wherein at least one of the channels has a vertical channel in a substantially vertical depth direction.

如請求項15之晶圓承載物，其中至少一個該溝道係具有相對於該垂直方向傾斜之深度方向之傾斜溝道。 A wafer carrier as claimed in claim 15, wherein at least one of the channel lines has an inclined channel in a depth direction inclined with respect to the vertical direction.

如請求項15之晶圓承載物，其中至少一個該溝道與該本體之該底部表面相交但並不與該本體之該頂部表面相交。 The wafer carrier of claim 15 wherein at least one of the channels intersects the bottom surface of the body but does not intersect the top surface of the body.

如請求項15之晶圓承載物，其中至少一個該溝道與該本體之該頂部表面相交但並不與該本體之該底部表面相交。 The wafer carrier of claim 15, wherein at least one of the channel and the substrate The top surface of the body intersects but does not intersect the bottom surface of the body.

如請求項15之晶圓承載物，其中至少一個該溝道係與該本體之該等頂部及底部表面二者相交之貫穿通道。 The wafer carrier of claim 15, wherein at least one of the channel is intersecting the through-channel of the top and bottom surfaces of the body.

如請求項25之晶圓承載物，其中至少一個該貫穿通道包含橫跨該溝道延伸且使該溝道之相對壁彼此連接但並不填充該溝道之固體支撐件。 A wafer carrier as claimed in claim 25, wherein at least one of the through channels comprises a solid support extending across the channel and interconnecting opposing walls of the channel but not filling the channel.

如請求項15之晶圓承載物，其中每一該穴具有垂直中心軸線，且該等溝道包含至少部分地在一個該穴之該中心軸線周圍延伸之內部溝道及至少部分地在該內部溝道周圍延伸之外部溝道。 The wafer carrier of claim 15 wherein each of the pockets has a vertical central axis and the channels comprise an inner channel extending at least partially around the central axis of the pocket and at least partially within the interior An external channel extending around the channel.

如請求項27之晶圓承載物，其中該等內部及外部溝道中之一者與該本體之該頂部表面但不與該底部表面相交，且該等內部及外部溝道中之另一者與該本體之該底部表面但不與該頂部表面相交。 The wafer carrier of claim 27, wherein one of the inner and outer channels intersects the top surface of the body but does not intersect the bottom surface, and the other of the inner and outer channels The bottom surface of the body does not intersect the top surface.

如請求項15之晶圓承載物，該等溝道中之至少一者沿水平方向延伸，從而使該溝道與該本體之該頂部或底部表面之相交點呈選自以下之幾何圖形：圓、橢圓、離軸橢圓、蛇形、螺旋、回旋曲線、拋物線及多邊形。 The wafer carrier of claim 15, wherein at least one of the channels extends in a horizontal direction such that a point at which the channel intersects the top or bottom surface of the body is a geometry selected from the group consisting of: Ellipse, off-axis ellipse, serpentine, spiral, convoluted curve, parabola, and polygon.

一種晶圓承載物，其包括具有沿水平方向延伸之相對面向之頂部及底部表面之本體、承載物中心軸線、周邊區域及位於該中心軸線與周邊區域之間之穴區域，該穴區域中具有複數個向該頂部表面開口之穴，每一該穴適於固持晶圓且使該晶圓之頂部表面暴露於該本體之該頂部表面處，該本體在該穴區域與該周邊區域之間具有在該穴區域周圍延伸之周邊熱控制特性，該周邊熱控制特性之導熱率低於該本體之毗鄰部分，從而使得該周邊熱控制特性減小該穴區域與該周邊區域之間之熱傳導。 A wafer carrier comprising a body having a top surface and a bottom surface extending in a horizontal direction, a carrier central axis, a peripheral region, and a pocket region between the central axis and the peripheral region, the pocket region having a plurality of holes opening to the top surface, each of the holes being adapted to hold the wafer and expose a top surface of the wafer to the top of the body At the surface, the body has a peripheral thermal control characteristic extending around the hole region between the hole region and the peripheral region, the thermal conductivity of the peripheral thermal control property being lower than an adjacent portion of the body, thereby causing the peripheral thermal control The feature reduces heat transfer between the pocket region and the peripheral region.

一種晶圓承載物，其包括具有沿水平方向延伸之相對面向之頂部及底部表面之本體、承載物中心軸線、周邊表面及複數個位於該中心軸線與該周邊表面之間之向該頂部表面開口之穴，每一該穴適於固持晶圓且使該晶圓之頂部表面暴露於該本體之該頂部表面處，該本體具有複數個穴熱控制特性，每一穴具有與該穴有關且至少部分地在該本體中佈置於該穴下方之部分周圍延伸之穴熱控制特性，該本體進一步具有毗鄰該周邊表面在該承載物周圍延伸之周邊熱控制特性，該等熱控制特性之導熱率低於該本體之毗鄰部分，從而使得該等熱控制特性阻抑沿該等水平方向之熱傳導。 A wafer carrier comprising a body having a top surface and a bottom surface extending in a horizontal direction, a carrier central axis, a peripheral surface, and a plurality of openings between the central axis and the peripheral surface to the top surface a hole, each of which is adapted to hold a wafer and expose a top surface of the wafer to the top surface of the body, the body having a plurality of hole thermal control characteristics, each hole having a hole associated with the hole a hole thermal control characteristic extending partially around a portion of the body disposed below the cavity, the body further having a peripheral thermal control characteristic extending adjacent the peripheral surface of the peripheral surface, the thermal conductivity of the thermal control characteristics being low Adjacent portions of the body such that the thermal control characteristics suppress heat transfer in the horizontal directions.

如請求項31之晶圓承載物，其中至少一些該等穴係毗鄰該周邊表面佈置之外側穴，且其中該周邊熱控制特性具有毗鄰該等外側穴之間斷。 The wafer carrier of claim 31, wherein at least some of the holes are disposed adjacent to the peripheral surface of the peripheral surface, and wherein the peripheral thermal control characteristic has an discontinuity adjacent the outer holes.

如請求項32之晶圓承載物，其中與每一外側穴有關之該穴熱控制特性具有與該周邊熱控制特性中之該等間斷中之一者對準的外側間斷。 The wafer carrier of claim 32, wherein the hole thermal control characteristic associated with each outer hole has an outer discontinuity aligned with one of the discontinuities in the peripheral thermal control characteristic.

如請求項33之晶圓承載物，其中該晶圓承載物係圓形且具有承載物中心軸線，每一穴係圓形且具有垂直中心軸線，且每一穴熱控制特性實質上呈與該有關穴共軸之弧形，且其中該周邊熱控制特性中之該等間斷及該等穴熱控制特性之該等外側間斷與該承載物中自該承載物中心軸線延伸穿過該等外側穴之該等中心軸線的半徑對準。 The wafer carrier of claim 33, wherein the wafer carrier is circular and has a carrier center axis, each of the holes being circular and having a vertical central axis, and each of the hole thermal control characteristics substantially Arc of the common axis Shapes, and wherein the outer discontinuities in the peripheral thermal control characteristics and the outer discontinuities of the thermal control characteristics of the holes and the central axes of the support extending from the central axis of the support through the outer peripheral points Radius alignment.

如請求項32之晶圓承載物，其中與每一外側穴有關之該穴熱控制特性具有橋接該周邊熱控制特性中之間斷之最外區段。 The wafer carrier of claim 32, wherein the hole thermal control characteristic associated with each outer hole has an outermost segment that bridges the discontinuity in the peripheral thermal control characteristic.

如請求項31之晶圓承載物，其中該等熱控制特性係溝道。 The wafer carrier of claim 31, wherein the thermal control characteristics are channels.

如請求項36之晶圓承載物，其中該晶圓承載物係圓形且具有承載物中心軸線，每一穴係圓形且具有垂直中心軸線，且每一穴熱控制特性實質上呈與該有關穴共軸之弧形溝道形式，且其中與至少一對相互毗鄰之穴有關之該等弧形溝道在該等相互毗鄰之穴之該等中心軸線之間的位置處彼此連結。 The wafer carrier of claim 36, wherein the wafer carrier is circular and has a carrier center axis, each of the holes being circular and having a vertical central axis, and each hole thermal control characteristic substantially The arcuate channel form of the coaxial axis, and wherein the arcuate channels associated with at least one pair of mutually adjacent pockets are joined to each other at a location between the central axes of the mutually adjacent pockets.

一種晶圓處理裝置，其包括：(a)反應室；(b)心軸，其安裝於該反應室內且可圍繞中心軸線旋轉；(c)如請求項1、15、30及31中任一項之晶圓承載物，其安裝至該心軸上以與其一起旋轉；(d)氣體分配元件，其安裝至該室中該晶圓承載物上方且經配置以將氣體向下引導至該晶圓承載物上；及(e)加熱器，其安裝於該室內該承載物下方。 A wafer processing apparatus comprising: (a) a reaction chamber; (b) a mandrel mounted in the reaction chamber and rotatable about a central axis; (c) as claimed in any of claims 1, 15, 30 and 31 a wafer carrier mounted to the mandrel for rotation therewith; (d) a gas distribution component mounted to the wafer carrier and configured to direct gas down to the crystal And a heater (e) mounted below the carrier in the chamber.

一種處理晶圓之方法，其包括： (a)將該等晶圓保持於如請求項1、15、30及31中任一項之晶圓承載物之該等穴中，從而使該等晶圓之頂部表面暴露於該承載物之頂部表面處；及(b)在如此保持該等晶圓時，將氣體向下引導至該等晶圓及承載物之該等頂部表面上，同時自下方加熱該承載物。 A method of processing a wafer, comprising: (a) maintaining the wafers in the pockets of the wafer carrier of any of claims 1, 15, 30 and 31 such that the top surface of the wafers is exposed to the carrier At the top surface; and (b) while maintaining the wafers, the gas is directed downward onto the top surfaces of the wafers and carriers while heating the carrier from below.