KR20160003442U - Wafer carrier with a 14-pocket configuration - Google Patents

Wafer carrier with a 14-pocket configuration Download PDF

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KR20160003442U
KR20160003442U KR2020150006435U KR20150006435U KR20160003442U KR 20160003442 U KR20160003442 U KR 20160003442U KR 2020150006435 U KR2020150006435 U KR 2020150006435U KR 20150006435 U KR20150006435 U KR 20150006435U KR 20160003442 U KR20160003442 U KR 20160003442U
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wafer carrier
wafer
pockets
top surface
pocket
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산딥 크리쉬난
라구 무어첸나이
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비코 인스트루먼츠 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67383—Closed carriers characterised by substrate supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/6773—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Manufacturing & Machinery (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
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  • Mechanical Engineering (AREA)
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Abstract

본 명세서에 설명 및 청구된 웨이퍼 캐리어는 상단 표면 상에 배열된 14개 포켓을 포함한다.The wafer carrier described and claimed herein comprises 14 pockets arranged on the top surface.

Description

14 포켓 구성을 갖는 웨이퍼 캐리어{WAFER CARRIER WITH A 14-POCKET CONFIGURATION}WAFER CARRIER WITH A 14-POCKET CONFIGURATION < RTI ID = 0.0 >

본 고안은 일반적으로 반도체 제조 기술에 관한 것으로, 특히, 처리 동안 반도체 웨이퍼를 보유하기 위한, 화학 기상 증착(CVD) 처리 및 관련 장치에 관한 것이다.The present invention relates generally to semiconductor manufacturing techniques and, more particularly, to chemical vapor deposition (CVD) processes and related devices for retaining semiconductor wafers during processing.

발광 다이오드(LED) 및 레이저 다이오드, 광 검출기 및 전계 효과 트랜지스터 같은 다른 고성능 장치의 제조시, 사파이어 또는 실리콘 기판 위에 갈륨 질화물 같은 재료를 사용하여 박막 적층 구조를 성장시키기 위해 화학 기상 증착(CVD) 공정이 통상적으로 사용된다. CVD 툴은 처리 챔버를 포함하며, 이 처리 챔버는 박막 층을 성장시키도록 주입 가스가 기판(통상적으로, 웨이퍼 형태의) 상에서 반응할 수 있게 하는 밀봉 환경에 있다. 이런 제조 장비의 현용의 제품 라인의 예는 뉴욕 플레인뷰 소재의 Veeco Instruments Inc.에 의해 제조되는 금속 유기 화학 기상 증착(MOCVD) 시스템의 TurboDisc® 및 EPIK 계열이다.In the manufacture of light emitting diodes (LEDs) and other high performance devices such as laser diodes, photodetectors and field effect transistors, a chemical vapor deposition (CVD) process is used to grow thin film laminate structures using materials such as gallium nitride on sapphire or silicon substrates It is commonly used. The CVD tool includes a processing chamber, which is in a sealed environment that allows the injection gas to react on a substrate (typically in the form of a wafer) to grow a thin film layer. Examples of current product lines of such manufacturing equipment are the TurboDisc® and EPIK series of metal organic chemical vapor deposition (MOCVD) systems manufactured by Veeco Instruments Inc. of Plainview, New York.

원하는 결정 성장을 달성하기 위해 온도, 압력 및 가스 유량 같은 다수의 처리 파라미터가 제어된다. 가변적 재료 및 처리 파라미터를 사용하여 다양한 층이 성장된다. 예로서, III-V 반도체 같은 화합물 반도체로부터 형성되는 장치는 통상적으로 MOCVD를 사용하여 화합물 반도체의 연속적 층을 성장시킴으로써 형성된다. 이러한 공정에서, 웨이퍼는 통상적으로 III족 금속의 소스로서의 금속 유기 화합물을 포함하고, 또한, V족 원소의 소스를 포함하는 가스의 조합에 노출되며, 이들은 웨이퍼가 상승된 온도로 유지되는 동안 웨이퍼의 표면 위로 유동하게 된다. 일반적으로, 금속 유기 화합물 및 V족 소스는 예로서, 뚜렷하게 반응에 참여하지 않는 캐리어 가스와 조합된다. III-V 반도체의 일 예는 갈륨 질화물이며, 이는 적절한 결정 격자 간격을 갖는 기판, 예로서, 사파이어 웨이퍼 상에서의 유기 갈륨 화합물과 암모니아의 반응에 의해 형성될 수 있다. 웨이퍼는 일반적으로 갈륨 질화물과 관련 화합물의 증착 동안 1000-1100℃ 정도의 온도에서 유지된다.Many process parameters such as temperature, pressure and gas flow rate are controlled to achieve the desired crystal growth. The various layers are grown using variable materials and process parameters. By way of example, devices formed from compound semiconductors such as III-V semiconductors are typically formed by growing a continuous layer of compound semiconductors using MOCVD. In such a process, the wafers typically contain a metal organic compound as a source of a Group III metal and are also exposed to a combination of gases comprising a source of a Group V element, And flows over the surface. In general, the metal organic compound and the Group V source are combined, for example, with a carrier gas that is not significantly involved in the reaction. An example of a III-V semiconductor is gallium nitride, which can be formed by the reaction of an organo-gallium compound with ammonia on a substrate having a suitable crystal lattice spacing, e.g., a sapphire wafer. The wafers are typically maintained at a temperature of about 1000-1100 DEG C during the deposition of gallium nitride and related compounds.

기판의 표면 상에서의 화학 반응에 의해 결정 성장이 이루어지는 MOCVD 공정에서, 필요한 조건 하에서 화학 반응이 진행되는 것을 보증하기 위해 처리 파라미터가 특히 주의 깊게 제어되어야만 한다. 처리 조건의 매우 미소한 변동도 장치 품질 및 제조 수율에 부정적 영향을 줄 수 있다. 예로서, 갈륨 및 인듐 질화물 층이 증착되는 경우, 웨이퍼 표면 온도의 변동은 증착된 층의 조성 및 대역갭의 변동을 유발한다. 인듐이 비교적 높은 증기압을 갖기 때문에, 증착된 층은 표면 온도가 더 높은 영역에서 낮은 비율의 인듐과 더 큰 대역갭을 갖는다. 증착된 층이 LED 구조의 활성, 발광층인 경우, 이 웨이퍼로부터 형성된 LED의 방출 파장 또한 허용불가한 정도로 변한다.In a MOCVD process in which crystal growth is effected by chemical reaction on the surface of the substrate, the process parameters must be carefully controlled to ensure that the chemical reaction proceeds under the necessary conditions. Very small variations in processing conditions can also have a negative impact on device quality and manufacturing yield. As an example, when gallium and indium nitride layers are deposited, variations in the wafer surface temperature cause variations in the composition and bandgap of the deposited layer. Because indium has a relatively high vapor pressure, the deposited layer has a lower percentage of indium and a larger bandgap in the region of higher surface temperature. When the deposited layer is the active, light emitting layer of the LED structure, the emission wavelength of the LED formed from this wafer also changes to an unacceptable degree.

MOCVD 처리 챔버에서, 박막의 층이 그 위에 성장되게 되는 반도체 웨이퍼는 웨이퍼 캐리어라 지칭되는 급속히 회전하는 캐러셀 상에 배치됨으로써 반도체 재료의 증착을 위한 반응기 챔버 내의 분위기에 대한 그 표면의 균일한 노출을 제공하게 된다. 회전 속도는 1,000 RPM 정도이다. 웨이퍼 캐리어는 통상적으로 그라파이트 같은 높은 열 전도성의 재료로부터 가공되며, 종종 실리콘 카바이드 같은 재료의 보호층으로 코팅된다. 각 웨이퍼 캐리어는 개별 웨이퍼가 배치되는 원형 만입부 또는 포켓의 세트를 그 상단 표면에 구비한다. 통상적으로, 웨이퍼는 각 포켓의 저부 표면에 대해 이격된 관계로 지지됨으로써 웨이퍼의 에지 둘레의 가스 유동을 허용한다. 관련 기술의 몇몇 예는 미국 출원 공개 제2012/0040097호, 미국 특허 제8,092,599호, 미국 특허 제8,021,487호, 미국 출원 공개 제2007/0186853호, 미국 특허 제6,902,623호, 미국 특허 제6,506,252호 및 미국 특허 제6,492,625호에 개시되어 있으며, 이들의 내용은 본 명세서에 참조로 통합되어 있다.In an MOCVD processing chamber, a semiconductor wafer on which a layer of thin film is grown is placed on a rapidly rotating carousel, referred to as a wafer carrier, to provide uniform exposure of the surface to the atmosphere in the reactor chamber for deposition of semiconductor material . The rotation speed is about 1,000 RPM. The wafer carrier is typically fabricated from a highly thermally conductive material such as graphite and is often coated with a protective layer of a material such as silicon carbide. Each wafer carrier has on its top surface a set of circular indentations or pockets in which individual wafers are placed. Typically, the wafers are supported in spaced relation to the bottom surface of each pocket to permit gas flow around the edge of the wafer. Some examples of related art are disclosed in U.S. Patent Application Publication No. 2012/0040097, U.S. Patent No. 8,092,599, U.S. Patent No. 8,021,487, U.S. Patent Application Publication No. 2007/0186853, U.S. Patent No. 6,902,623, U.S. Patent No. 6,506,252, 6,492,625, the contents of which are incorporated herein by reference.

웨이퍼 캐리어는 웨이퍼의 노출 표면을 갖는 웨이퍼 캐리어의 상단 표면이 가스 분배 장치를 향해 상향 지향하도록 반응 챔버 내에서 스핀들 상에 지지된다. 스핀들이 회전하는 동안, 가스가 웨이퍼 캐리어의 상단 표면 상으로 하향 안내되고, 웨이퍼 캐리어의 주연부를 향해 상단 표면을 가로질러 유동한다. 사용된 가스는 웨이퍼 캐리어 아래에 배치된 포트를 통해 반응 챔버로부터 배기된다. 웨이퍼 캐리어는 웨이퍼 캐리어의 저부 표면 아래에 배치된 가열 요소, 통상적으로, 전기 저항 가열 요소에 의해 원하는 상승된 온도로 유지된다. 이들 가열 요소는 웨이퍼 표면의 원하는 온도를 초과한 온도로 유지되는 반면, 가스 분배 장치는 통상적으로 가스의 조기 반응을 방지하기 위해 원하는 반응 온도보다 매우 낮은 온도로 유지된다. 따라서, 가열 요소로부터 웨이퍼 캐리어의 저부 표면으로 열이 전달되고, 웨이퍼 캐리어를 통해 개별 웨이퍼로 상향 유동된다.The wafer carrier is supported on the spindle in the reaction chamber such that the upper surface of the wafer carrier having the exposed surface of the wafer is directed upwardly toward the gas distribution device. During rotation of the spindle, gas is directed downward onto the top surface of the wafer carrier and flows across the top surface toward the periphery of the wafer carrier. The gas used is evacuated from the reaction chamber through a port disposed below the wafer carrier. The wafer carrier is maintained at a desired elevated temperature by a heating element, typically an electrical resistance heating element, disposed below the bottom surface of the wafer carrier. These heating elements are maintained at a temperature above the desired temperature of the wafer surface, while the gas distribution device is typically maintained at a temperature much lower than the desired reaction temperature to prevent premature reaction of the gas. Thus, heat is transferred from the heating element to the bottom surface of the wafer carrier and flows upwardly through the wafer carrier to the individual wafer.

웨이퍼 위의 가스 유동은 각 웨이퍼의 반경방향 위치에 따라 변하며, 최외측에 위치된 웨이퍼는 회전 동안의 그 더 빠른 속도에 기인하여 더 높은 유량에 노출된다. 각 개별 웨이퍼 상에서도, 온도 비균일부, 즉, 냉점과 열점이 존재할 수 있다. 온도 비균일부의 형성에 영향을 주는 변수 중 하나는 웨이퍼 캐리어 내의 포켓의 형상이다. 일반적으로, 포켓 형상은 웨이퍼 캐리어의 표면에서 원형 형상을 형성한다. 웨이퍼 캐리어가 회전함에 따라, 웨이퍼는 그 최외측 에지(즉, 회전축으로부터 가장 먼 에지)에서 상당한 구심력을 받아서, 웨이퍼가 웨이퍼 캐리어의 각 포켓의 내부 벽에 대해 압박되게 한다. 이러한 조건 하에서, 포켓 에지와 웨이퍼의 이들 외측 에지 사이에 친밀한 접촉이 이루어지게 된다. 웨이퍼의 최외측 부분에 대한 증가된 열 전도는 더 많은 온도 비균일부를 초래하여 상술한 문제를 더욱 심화시킨다. 웨이퍼 에지와 포켓의 내부 벽 사이의 간극을 증가시킴으로써 온도 비균일부를 최소화하기 위한 노력이 이루어져 왔으며, 이는 에지의 일부 상에서 평탄하게 웨이퍼를 설계하는 것(즉, “평탄한” 웨이퍼)을 포함한다. 웨이퍼의 이 평탄한 부분은 간극을 생성하고, 포켓의 내부 벽과의 접촉점을 감소시킴으로써 온도 비균일부를 완화시킨다. 웨이퍼 캐리어에 의해 보유되는 웨이퍼 전반에 걸친 가열 균일성에 영향을 주는 다른 인자는 웨이퍼 포켓의 레이아웃과 조합된, 웨이퍼 캐리어의 열 전달 및 방사율 특성을 포함한다.The gas flow over the wafer varies with the radial position of each wafer and the outermost wafer is exposed to a higher flow rate due to its faster speed during rotation. On each individual wafer, there may also be some temperature asymmetry, i.e., cold and hot spots. One of the variables affecting the formation of the temperature nonuniform portion is the shape of the pocket in the wafer carrier. Generally, the pocket shape forms a circular shape at the surface of the wafer carrier. As the wafer carrier rotates, the wafer undergoes a considerable centripetal force at its outermost edge (i.e., the farthest edge from the rotational axis), causing the wafer to be pressed against the inner wall of each pocket of the wafer carrier. Under such conditions, intimate contact is made between the pocket edge and these outer edges of the wafer. Increased heat conduction to the outermost portion of the wafer results in more temperature nonuniformity and further exacerbates the problems described above. Efforts have been made to minimize the temperature non-uniformity by increasing the clearance between the wafer edge and the inner walls of the pocket, which includes flattening the wafer (i.e., a "flat" wafer) on a portion of the edge. This flat portion of the wafer creates a gap and reduces the temperature nonuniformity by reducing the contact points with the inner walls of the pocket. Other factors that affect the heating uniformity across the wafer held by the wafer carrier include the heat transfer and emissivity properties of the wafer carrier combined with the layout of the wafer pocket.

온도 균일성 요건을 고려한 상태에서, 웨이퍼 캐리어의 다른 바람직한 특성은 CVD 공정의 처리량을 증가시키는 것이다. 공정 처리량 증가에 있어서 웨이퍼 캐리어의 역할은 더 많은 양의 개별 웨이퍼를 보유하는 것이다. 더 많은 웨이퍼를 갖는 웨이퍼 캐리어 레이아웃을 제공하는 것은 열적 모델에 영향을 준다. 예로서, 에지 부근의 웨이퍼 캐리어의 부분은 웨이퍼 캐리어로부터의 복사 열 손실에 기인하여 다른 부분보다 낮은 온도가 되는 경향이 있다.In view of the temperature uniformity requirements, another desirable characteristic of the wafer carrier is to increase the throughput of the CVD process. The role of the wafer carrier in increasing process throughput is to have a larger amount of individual wafers. Providing a wafer carrier layout with more wafers affects the thermal model. By way of example, the portion of the wafer carrier near the edge tends to be at a lower temperature than the other portion due to radiant heat loss from the wafer carrier.

따라서, 웨이퍼 캐리어에 대하여, 고밀도 레이아웃으로 온도 균일성 및 기계적 응력이 해결되는 실용적 해결책이 필요하다.Thus, for wafer carriers, there is a need for a practical solution in which temperature uniformity and mechanical stresses are resolved in a high density layout.

웨이퍼 캐리어는 새로운 포켓 배열을 포함한다. 본 명세서에 설명된 배열은 원형 웨이퍼의 성장을 위한 포켓의 높은 팩킹 밀도와 열 전달을 돕는다.The wafer carrier includes a new pocket arrangement. The arrangement described herein aids in high packing density and heat transfer of the pockets for growth of the circular wafer.

본 고안은 첨부 도면과 연계한 본 고안의 다양한 실시예에 대한 이하의 상세한 설명을 고려하면 더 완전하게 이해될 수 있다.
도 1은 일 실시예에 따른 MOCVD 처리 챔버의 개략도이다.
도 2는 일 실시예에 따른 14 포켓 구성을 갖는 웨이퍼 캐리어의 사시도이다.
도 3은 일 실시예에 따른 14 포켓 구성을 갖는 웨이퍼 캐리어의 상면도이다.
도 4는 일 실시예에 따른 14 포켓 구성을 갖는 웨이퍼 캐리어의 측면도이다.
도 5는 일 실시예에 따른 14 포켓 구성을 갖는 웨이퍼 캐리어의 저면도이다.
도 6은 일 실시예에 따른 사시도로부터 단일 포켓을 도시하는, 14 포켓 구성을 갖는 웨이퍼 캐리어의 일부의 상세도이다.This invention may be more fully understood in consideration of the following detailed description of various embodiments of the present invention in connection with the accompanying drawings.
1 is a schematic diagram of a MOCVD processing chamber in accordance with one embodiment.
2 is a perspective view of a wafer carrier having a 14 pocket configuration according to one embodiment.
3 is a top view of a wafer carrier having a 14 pocket configuration according to one embodiment.
4 is a side view of a wafer carrier having a 14 pocket configuration according to one embodiment.
5 is a bottom view of a wafer carrier having a 14 pocket configuration according to one embodiment.
6 is a detail view of a portion of a wafer carrier having a 14 pocket configuration, showing a single pocket from a perspective view in accordance with one embodiment.

도 1은 본 고안의 일 실시예에 따른 화학 기상 증착 장치를 예시한다. 반응 챔버(10)는 처리 환경 공간을 한정한다. 가스 분배 장치(12)가 챔버의 일 단부에 배열된다. 가스 분배 장치(12)를 갖는 단부는 본 명세서에서 반응 챔버(10)의 “상단” 단부라 지칭된다. 챔버의 이 단부는 반드시는 아니지만 통상적으로 일반적 기준 중력 프레임에서 챔버의 상단에 배치된다. 따라서, 본 명세서에서 사용되는 하향 방향은 가스 분배 장치(12)로부터 멀어지는 방향을 지칭하는 반면, 상향 방향은 챔버 내부에서 가스 분배 장치(12)를 향하는 방향을 지칭하며, 이들 방향이 중력적 상향 및 하향 방향과 정렬되는지 여부는 무관하다. 유사하게, 요소의 “상단” 및 “저부” 표면은 본 명세서에서 가스 분배 장치(12)와 반응 챔버(10)의 기준 프레임을 기준으로 설명된다.FIG. 1 illustrates a chemical vapor deposition apparatus according to an embodiment of the present invention. The reaction chamber 10 defines a processing environment space. A gas distribution device 12 is arranged at one end of the chamber. The end with the gas distribution device 12 is referred to herein as the " upper " end of the reaction chamber 10. This end of the chamber is normally, but not necessarily, placed at the top of the chamber in a general reference gravity frame. Thus, the downward direction as used herein refers to the direction away from the gas distribution device 12, while the upward direction refers to the direction from the interior of the chamber toward the gas distribution device 12, Whether it is aligned with the downward direction or not. Similarly, the " top " and " bottom " surfaces of the element are described herein with respect to the reference frame of the gas distribution device 12 and reaction chamber 10.

가스 분배 장치(12)는 V족 금속의 소스 및 금속 유기체 화합물 같은 반응 가스와 캐리어 가스 같은 웨이퍼 처리 공정에 사용되는 처리 가스를 공급하기 위해 소스(14, 16, 18)에 연결된다. 가스 분배 장치(12)는 다양한 가스를 수용하도록 배열되며, 대체로 하향 방향으로 처리 가스의 유동을 안내하도록 배열된다. 또한, 가스 분배 장치(12)는 동작 동안 원하는 온도에서 가스 분배 장치의 온도를 유지하도록 가스 분배 장치(12)를 통해 액체를 순환시키도록 배열된 냉각제 시스템(20)에 연결되는 것이 바람직하다. 유사한 냉각제 배열(미도시)이 반응 챔버(10)의 벽을 냉각하기 위해서 제공될 수 있다. 또한, 반응 챔버(10)는 가스 분배 장치(12)로부터 하향 방향으로의 지속적 가스 유동을 허용하도록 챔버의 저부에서 또는 그 부근에서 포트(미도시)를 통해 챔버(10)의 내부로부터 사용된 가스를 제거하도록 배열된 배기 시스템(22)을 구비한다.The gas distribution device 12 is connected to sources 14, 16, 18 for supplying a source of Group V metal and a process gas used in a wafer processing process, such as a carrier gas and a reactive gas, such as a metal organic compound. The gas distribution device 12 is arranged to receive various gases and is arranged to guide the flow of the process gas in a generally downward direction. In addition, the gas distribution device 12 is preferably connected to a coolant system 20 arranged to circulate liquid through the gas distribution device 12 to maintain the temperature of the gas distribution device at the desired temperature during operation. A similar coolant arrangement (not shown) may be provided to cool the walls of the reaction chamber 10. In addition, the reaction chamber 10 may also include a gas inlet port (not shown) for introducing gas used from the interior of the chamber 10 through a port (not shown) at or near the bottom of the chamber to permit continuous gas flow downwardly from the gas distribution device 12. [ And an exhaust system 22 arranged to remove the exhaust gas.

스핀들(24)은 스핀들(24)의 중심축(26)이 상향 및 하향 방향으로 연장하도록 챔버 내에 배열된다. 스핀들(24)은 반응 챔버(10)의 벽과 스핀들(24) 사이의 밀봉을 유지하면서 스핀들(24)이 중심축(26) 둘레로 회전할 수 있도록 밀봉부(미도시) 및 베어링을 포함하는 종래의 회전 관통 장치(28)에 의해 챔버에 장착된다. 스핀들은 그 상단 단부에서, 즉, 가스 분배 장치(12)에 가장 근접한 스핀들의 단부에서 피팅(fitting)(30)을 구비한다. 추가로 후술된 바와 같이, 피팅(30)은 웨이퍼 캐리어와 해제가능하게 결합하도록 구성된 웨이퍼 캐리어 유지 기구의 일 예이다. 도시된 특정 실시예에서, 피팅(30)은 스핀들의 상단 단부를 향해 테이퍼지고 평탄한 상단 표면에서 종결되는 대체로 절두원추형의 요소이다. 절두원추형 요소는 원추의 절두체 형상을 갖는 요소이다. 스핀들(24)은 중심축(26) 둘레로 스핀들(24)을 회전시키도록 배열된 전기 모터 구동부 같은 회전 구동 기구(32)에 연결된다.The spindle 24 is arranged in the chamber such that the central axis 26 of the spindle 24 extends upwardly and downwardly. The spindle 24 includes a seal (not shown) and a bearing so that the spindle 24 can rotate about the central axis 26 while maintaining a seal between the walls of the reaction chamber 10 and the spindle 24 And is mounted in the chamber by a conventional rotary penetrating device 28. [ The spindle has a fitting 30 at its upper end, i. E. At the end of the spindle closest to the gas distribution device 12. As further described below, the fitting 30 is an example of a wafer carrier holding mechanism configured to releasably engage the wafer carrier. In the particular embodiment shown, the fitting 30 is a generally frusto-conical element that terminates in a tapered and flat upper surface toward the upper end of the spindle. The truncated cone element is a frusto-conical element. The spindle 24 is connected to a rotary drive mechanism 32, such as an electric motor drive arranged to rotate the spindle 24 about the center axis 26.

가열 요소(34)가 챔버 내에 장착되고 피팅(30) 아래에서 스핀들(24)을 둘러싼다. 반응 챔버(10)는 또한 대기실(38)로 이어지는 진입 개구(36)와, 진입 개구를 폐쇄 및 개방하기 위한 도어(40)를 구비한다. 도어(40)는 도 1에 단지 개략적으로 도시되어 있으며, 도어가 반응 챔버(10)의 내부를 대기실(38)로부터 격리시키는 실선으로 도시된 폐쇄 위치와, 40’에서 파선으로 도시된 개방 위치 사이에서 이동가능한 것으로 도시되어 있다. 도어(40)는 적절한 제어부와 개방 위치와 폐쇄 위치 사이에서 도어를 이동시키기 위한 작동 기구를 구비한다. 실제로, 도어는 예로서, 본 명세서에 그 내용이 참조로 통합되어 있는 미국 특허 제7,276,124호에 개시된 것 같은 상향 및 하향 방향으로 이동가능한 셔터를 포함할 수 있다. 도 1에 도시된 장치는 대기실(38)로부터 챔버 내로 웨이퍼 캐리어를 이동시키고 웨이퍼 캐리어를 작동 위치에서 스핀들(24)과 결합시킬 수 있는, 그리고, 또한, 웨이퍼 캐리어를 스핀들(24)로부터 대기실(38) 내로 이동시킬 수 있는 로딩 기구(미도시)를 더 포함할 수 있다.A heating element 34 is mounted in the chamber and surrounds the spindle 24 below the fitting 30. The reaction chamber 10 also has an entry opening 36 leading to the waiting chamber 38 and a door 40 for closing and opening the entry opening. The door 40 is shown only schematically in FIG. 1 and is shown between the closed position shown by the solid line isolating the interior of the reaction chamber 10 from the waiting chamber 38 and the open position shown by the broken line at 40 ' As shown in Fig. The door (40) has an appropriate control and an actuating mechanism for moving the door between an open position and a closed position. In practice, the door may include, for example, upwardly and downwardly movable shutters as disclosed in U.S. Patent No. 7,276,124, the contents of which are incorporated herein by reference. The apparatus shown in Figure 1 is capable of moving the wafer carrier from the waiting chamber 38 into the chamber and engaging the wafer carrier with the spindle 24 in the operative position and also moving the wafer carrier from the spindle 24 to the waiting chamber 38 (Not shown) capable of moving the wafer W into the processing chamber (not shown).

장치는 또한 복수의 웨이퍼 캐리어를 포함한다. 도 1에 도시된 동작 상태에서, 제1 웨이퍼 캐리어(42)는 동작 위치에서 반응 챔버(10) 내부에 배치되는 반면, 제2 웨이퍼 캐리어(44)는 대기실(38) 내에 배치되어 있다. 각 웨이퍼 캐리어는 실질적으로 중심축을 갖는 원형 디스크 형태인 본체(46)를 포함한다(도 2 참조). 본체(46)는 축을 중심으로 대칭적으로 형성된다. 동작 위치에서, 웨이퍼 캐리어 본체의 축은 스핀들(24)의 중심축(26)과 일치한다. 본체(46)는 복수의 부재의 복합체로서 또는 단일 부재로서 형성될 수 있다. 예로서, 그 내용이 본 명세서에 참조로 통합되어 있는 미국 출원 공개 제20090155028호에 개시된 바와 같이, 웨이퍼 캐리어 본체는 중심축 둘레의 본체의 작은 영역을 형성하는 허브와, 디스크형 본체의 잔여부를 형성하는 더 큰 부분을 포함할 수 있다. 본체(46)는 처리를 오염시키지 않고 처리중에 겪게되는 온도를 견딜 수 있는 재료로 형성되는 것이 바람직하다. 예로서, 디스크의 더 큰 부분은 흑연, 실리콘 카바이드 또는 다른 내화 재료 같은 재료로 대부분 또는 전체적으로 형성될 수 있다. 본체(46)는 일반적으로 디스크의 중심축에 대체로 수직으로 서로 대체로 평행하게 연장하는 평면형 상단부 표면(48)과 저부 표면(52)을 구비한다. 본체(46)는 또한 복수의 웨이퍼를 보유하도록 구성된 하나 또는 복수의 웨이퍼 보유 특징부를 갖는다.The apparatus also includes a plurality of wafer carriers. 1, the first wafer carrier 42 is disposed within the reaction chamber 10 at the operating position, while the second wafer carrier 44 is disposed within the waiting chamber 38. In the operating state shown in FIG. Each wafer carrier includes a body 46 in the form of a circular disc having a substantially central axis (see FIG. 2). The body 46 is formed symmetrically about the axis. In the operating position, the axis of the wafer carrier body coincides with the central axis 26 of the spindle 24. The body 46 can be formed as a composite of a plurality of members or as a single member. For example, as disclosed in U. S. Patent Application Publication No. 20090155028, the contents of which are incorporated herein by reference, the wafer carrier body includes a hub defining a small area of the body about a central axis and a hub defining a remainder of the disk- A larger portion of the < / RTI > The body 46 is preferably formed of a material that can withstand the temperatures experienced during processing without contaminating the process. By way of example, a larger portion of the disk may be formed most or wholly of a material such as graphite, silicon carbide, or other refractory material. The body 46 generally has a planar top surface 48 and a bottom surface 52 that extend generally parallel to one another and generally perpendicular to the central axis of the disk. The body 46 also has one or more wafer retaining features configured to retain a plurality of wafers.

동작시, 사파이어, 실리콘 카바이드 또는 다른 결정 기판으로 형성된 디스크형 웨이퍼 같은 웨이퍼(54)는 각 웨이퍼 캐리어의 각 포켓(56) 내에 배치된다. 통상적으로, 웨이퍼(54)는 주 표면의 치수에 비해 작은 두께를 갖는다. 예로서, 직경이 약 2 in(50 mm)인 원형 웨이퍼는 약 430 ㎛ 두께 이하일 수 있다. 도 1에 예시된 바와 같이, 웨이퍼(54)는 상단 표면이 웨이퍼 캐리어의 상단에서 노출되도록 상단 표면이 상향 지향한 상태로 배치된다. 다양한 실시예에서, 웨이퍼 캐리어(42)는 다른 양의 웨이퍼를 지지할 수 있다는 것을 유의하여야 한다. 예로서, 일 예시적 실시예에서, 웨이퍼 캐리어(42)는 6개 웨이퍼를 보유하도록 구성될 수 있다. 다른 실시예에서, 도 2에 도시된 바와 같이, 웨이퍼 캐리어는 25개 웨이퍼를 지지할 수 있다.In operation, a wafer 54, such as a disc-shaped wafer formed of sapphire, silicon carbide, or other crystalline substrate, is disposed within each pocket 56 of each wafer carrier. Typically, the wafer 54 has a thickness that is less than the dimensions of the major surface. By way of example, a circular wafer having a diameter of about 2 in (50 mm) may be less than about 430 micrometers thick. As illustrated in FIG. 1, the wafer 54 is disposed with the top surface oriented upward such that the top surface is exposed at the top of the wafer carrier. It should be noted that in various embodiments, the wafer carrier 42 may support a different amount of wafers. By way of example, in one exemplary embodiment, the wafer carrier 42 may be configured to hold six wafers. In another embodiment, as shown in Figure 2, the wafer carrier may support 25 wafers.

통상적 MOCVD 공정에서, 웨이퍼가 탑재된 웨이퍼 캐리어(42)는 대기실(38)로부터 반응 챔버(10) 내로 로딩되고, 도 1에 도시된 동작 위치에 배치된다. 이러한 상태에서, 웨이퍼의 상단 표면은 가스 분배 장치(12)를 향해 상향 지향된다. 가열 요소(34)가 작동되고, 회전 구동 기구(32)가 스핀들(24), 그리고, 따라서, 웨이퍼 캐리어(42)를 축(26)을 둘레로 회전시키도록 동작한다. 통상적으로, 스핀들(24)은 약 50 내지 1500rpm의 회전 속도로 회전된다. 처리 가스 공급 유닛(14, 16, 18)은 가스 분배 장치(12)를 통해 가스를 공급하도록 작동된다. 가스는 웨이퍼 캐리어(42)를 향해 하방으로, 웨이퍼(54)와 웨이퍼 캐리어(42)의 상단 표면(48) 위로, 그리고, 웨이퍼 캐리어의 주연부 둘레로 하방으로 출구 및 배기 시스템(22)까지 전달된다. 따라서, 웨이퍼 캐리어의 상단 표면 및 웨이퍼(54)의 상단 표면은 다양한 처리 가스 공급 유닛에 의해 공급된 다양한 가스의 혼합물을 포함하는 처리 가스에 노출된다. 가장 통상적으로, 상단 표면에서 처리 가스는 주로 캐리어 가스 공급 유닛(16)에 의해 공급되는 캐리어 가스로 구성된다. 통상적 화학 기상 증착 공정에서, 캐리어 가스는 질소일 수 있으며, 따라서, 웨이퍼 캐리어의 상단 표면의 처리 가스는 주로 약간의 반응성 가스 성분과 함께 질소로 구성된다.In a typical MOCVD process, a wafer carrier 42 on which a wafer is loaded is loaded into the reaction chamber 10 from the waiting chamber 38 and placed in the operating position shown in FIG. In this state, the upper surface of the wafer is directed upward toward the gas distribution device 12. [ The heating element 34 is actuated and the rotational drive mechanism 32 operates to rotate the spindle 24 and thus the wafer carrier 42 about the axis 26. Typically, the spindle 24 is rotated at a rotational speed of about 50 to 1500 rpm. The process gas supply units (14, 16, 18) are operated to supply gas through the gas distribution device (12). Gas is delivered downward toward the wafer carrier 42 and onto the top surface 48 of the wafer 54 and the wafer carrier 42 and down to the periphery of the wafer carrier to the outlet and exhaust system 22 . Thus, the upper surface of the wafer carrier and the upper surface of the wafer 54 are exposed to a process gas comprising a mixture of various gases supplied by the various process gas supply units. Most typically, at the top surface, the process gas consists primarily of the carrier gas supplied by the carrier gas supply unit 16. In a typical chemical vapor deposition process, the carrier gas may be nitrogen, and thus, the process gas at the top surface of the wafer carrier is composed primarily of nitrogen along with some reactive gas components.

가열 요소(34)는 원론적으로 복사 열 전달에 의해 웨이퍼 캐리어(42)의 저부 표면(52)으로 열을 전달한다. 웨이퍼 캐리어(42)의 저부 표면(52)에 인가된 열은 웨이퍼 캐리어의 본체(46)를 통해 웨이퍼 캐리어의 상단 표면(48)으로 상향 유동한다. 본체를 통해 상향 전달되는 열은 또한 갭을 통해 각 웨이퍼의 저부 표면으로 상향 전달되고, 웨이퍼를 통해 웨이퍼(54)의 상단 표면으로 상향 전달된다. 열은 웨이퍼 캐리어(42)의 상단 표면(48)으로부터, 그리고, 웨이퍼의 상단 표면으로부터 처리 챔버의 더 차가운 요소로, 예로서, 처리 챔버의 벽 및 가스 분배 장치(12)로 복사된다. 또한, 열은 웨이퍼 캐리어(42)의 상단 표면(48) 및 웨이퍼의 상단 표면으로부터 이들 표면 위를 지나가는 처리 가스로 전달된다.The heating element 34 principally transfers heat to the bottom surface 52 of the wafer carrier 42 by radiant heat transfer. The heat applied to the bottom surface 52 of the wafer carrier 42 flows upwardly through the body 46 of the wafer carrier to the top surface 48 of the wafer carrier. The heat transferred upward through the body is also transferred upwardly through the gap to the bottom surface of each wafer and upwardly transferred through the wafer to the upper surface of the wafer 54. Heat is radiated from the top surface 48 of the wafer carrier 42 and from the top surface of the wafer to the cooler elements of the process chamber, for example, to the walls of the process chamber and to the gas distribution device 12. Heat is also transferred from the top surface 48 of the wafer carrier 42 and the top surface of the wafer to the process gas passing over these surfaces.

도시된 실시예에서, 시스템은 각 웨이퍼(54)의 표면의 가열 균일성을 결정하도록 설계된 다수의 특징부를 포함한다. 본 실시예에서, 온도 프로파일링 시스템(58)은 온도 모니터(60)로부터 온도 및 온도 모니터링 위치 정보를 포함할 수 있는 온도 정보를 수신한다. 또한, 온도 프로파일링 시스템(58)은 일 실시예에서 회전 구동 기구(32)로부터 도입될 수 있는 웨이퍼 캐리어 위치 정보를 수신한다. 이러한 정보에 의해, 온도 프로파일링 시스템(58)은 웨이퍼 캐리어(42) 상의 포켓(56)의 온도 프로파일을 구성한다. 온도 프로파일은 각 포켓(56)의 표면과 내부에 수용된 웨이퍼(54) 상의 열적 분포를 나타낸다.In the illustrated embodiment, the system includes a number of features designed to determine the heating uniformity of the surface of each wafer 54. In this embodiment, the temperature profiling system 58 receives temperature information from the temperature monitor 60, which may include temperature and temperature monitoring position information. The temperature profiling system 58 also receives wafer carrier position information that may be introduced from the rotary drive mechanism 32 in one embodiment. With this information, the temperature profiling system 58 constitutes the temperature profile of the pocket 56 on the wafer carrier 42. The temperature profile represents the thermal distribution on the surface of each pocket 56 and on the wafer 54 received therein.

도 2는 일 실시예에 따른 웨이퍼 캐리어(142)의 사시도이다. 도 3은 동일 웨이퍼 캐리어(142)의 상면도이다. 웨이퍼 캐리어(142)는 상단 표면(148)과 내부에 형성된 14개 포켓(162)을 갖는 본체(146)를 포함한다. 도 2 및 도 3에 도시된 실시예에서, 포켓(162)은 2개 원(R1, R2)으로 배열되며, 이들 각각은 본체(146)의 외부 에지에 의해 형성되는 원과 동심이다. 반경방향 내측 원(R1)에서, 4개 포켓(162)이 방위각적으로 균등하게 이격 배치된다. 유사하게, 반경방향 외측 원(R2)에서, 10개 포켓(162)이 방위각적으로 균등하게 이격 배치된다. 포켓(162) 각각은 그를 따라 상단 면(148)이 배열되는 평면에 실질적으로 수직으로 연장하는 본체(146)에 형성된 개구이다.2 is a perspective view of a wafer carrier 142 according to one embodiment. 3 is a top view of the same wafer carrier 142. FIG. The wafer carrier 142 includes a top surface 148 and a body 146 having fourteen pockets 162 formed therein. In the embodiment shown in Figures 2 and 3, the pocket 162 is arranged in two circles R1, R2, each of which is concentric with a circle formed by the outer edge of the body 146. [ In the radially inner circle R1, the four pockets 162 are equally spaced azimuthally. Similarly, in the radially outer circle R2, ten pockets 162 are equally spaced azimuthally. Each of the pockets 162 is an opening formed in the body 146 extending substantially perpendicular to the plane in which the top surface 148 is arranged.

도 2 및 도 3에 도시된 포켓의 배열은 상단 표면(148) 상에 포켓(162)의 비교적 높은 밀도를 유지하면서 원하는 수준의 가열 균일성을 제공한다는 점에서 유리하다. 실시예에서, 상단 표면(148)은 약 300 mm의 직경을 가질 수 있다. 포켓(162)은 이때 그 영역에 끼워지도록 크기설정된다. 예로서, 실시예에서, 포켓(162)은 약 50 mm의 직경을 가질 수 있다.The arrangement of the pockets shown in Figures 2 and 3 is advantageous in that it provides a desired level of heat uniformity while maintaining a relatively high density of pockets 162 on the top surface 148. In an embodiment, the top surface 148 may have a diameter of about 300 mm. The pocket 162 is sized to fit into the area at this time. By way of example, in an embodiment, the pocket 162 may have a diameter of about 50 mm.

도 3은 포켓(162)이 그 둘레에 배열되는 대표적 원을 추가로 도시한다. 도 3에 도시된 실시예에서, 2개의 원, R1 및 R2가 존재하며, 이들 각각은 서로 다른 반경을 가지고 서로 동심으로 배열되며, 상단 표면(148)의 원형 프로파일을 갖는다.3 further illustrates a representative circle in which the pocket 162 is arranged around it. In the embodiment shown in Fig. 3, there are two circles, R1 and R2, each of which has a different radius and is arranged concentrically with respect to one another and has a circular profile of the top surface 148.

도 4는 측면도로 도시되어 있는, 도 2 및 도 3의 웨이퍼 캐리어(142)의 측면도이다. 도 4에 도시된 모습에서, 상단 표면(148)과 저부 표면(152) 사이의 상대적 크기 편차를 볼 수 있다. 특히, 상단 표면은 도 4에 도시된 바와 같이 지면의 상단 및 저부를 향해 추가로 연장하거나, 추가로, 도 2 및 도 3에 도시된 도면에서 반경방향으로 연장한다. 도 2 및 도 3에 앞서 도시된 포켓(162) 각각은 상단 표면(148)으로부터 저부 표면(152)을 향해 연장한다. 저부 표면(152)은 웨이퍼 캐리어(142) 내에서 웨이퍼가 그 위에서 성장될 수 있는 고체 베이스를 제공한다.Figure 4 is a side view of the wafer carrier 142 of Figures 2 and 3, shown in side view. In the view shown in FIG. 4, the relative size deviation between the top surface 148 and the bottom surface 152 can be seen. In particular, the top surface further extends toward the top and bottom of the paper as shown in Fig. 4, or additionally extends radially in the views shown in Figs. 2 and 3. Each of the pockets 162 shown prior to Figs. 2 and 3 extend from the top surface 148 toward the bottom surface 152. The bottom surface 152 provides a solid base within which the wafer can be grown within the wafer carrier 142.

도 5는 도 2 내지 도 4에 관하여 전술된 웨이퍼 캐리어(142)의 저면도이다. 도 5에 도시된 바와 같이, 웨이퍼 캐리어(142)는 저부 표면(152)의 중심에서 로킹 구조부(164)를 포함한다. 로킹 구조부(164)는 도 1에서 앞서 도시된 스핀들(24)의 피팅(30) 같은 다른 구성요소와 결합하도록 구성된다. 다양한 실시예에서, 로킹 구조부(164)는 스핀들, 척(chuck), 키이형 피팅을 예로서 포함할 수 있다. 본 기술 분야의 숙련자는 다양한 기구가 인접한 구성요소로부터 웨이퍼 캐리어(142)에 각운동량을 부여할 수 있다는 것을 알 수 있을 것이다.5 is a bottom view of the wafer carrier 142 described above with respect to Figs. 2-4. As shown in FIG. 5, the wafer carrier 142 includes a locking structure 164 at the center of the bottom surface 152. The locking structure 164 is configured to engage other components, such as the fitting 30 of the spindle 24 shown previously in Fig. In various embodiments, the locking structure 164 may include, by way of example, a spindle, a chuck, and a keyed fitting. Those skilled in the art will appreciate that various mechanisms may impart angular momentum to the wafer carrier 142 from adjacent components.

저부 면(152)은 임의의 재료일 수 있으며, 일 실시예에서, 열 전달을 촉진하도록 설계된다. 전술한 바와 같이, 실시예에서, 인근 가열 요소(도 1에 도시된 가열 요소(34) 같은)로부터 저부 면(152)으로 열을 전달하는 것이 바람직하다. 이 때문에, 저부 면(152)은 비교적 저 반사율 재료 일 수 있거나 이런 물질로 코팅될 수 있다.The bottom surface 152 can be any material and, in one embodiment, is designed to promote heat transfer. As described above, in an embodiment, it is desirable to transfer heat from a nearby heating element (such as heating element 34 shown in FIG. 1) to bottom surface 152. For this reason, the bottom surface 152 can be a relatively low-reflectivity material or can be coated with such a material.

웨이퍼 캐리어(142)는 실시예에서 그라파이트 또는 그라파이트 코팅된 재료 같은 그 위에서의 에피텍셜 성장에 적합한 임의의 재료로 이루어질 수 있다. 다른 실시예에서, 웨이퍼 캐리어(142)를 구성하는 재료는 원하는 결정 격자 배열 또는 크기가 일치하도록 선택될 수 있다. 유사하게, 성장을 원하는 웨이퍼에 따라서, 다양한 크기의 포켓(162)이 사용될 수 있다.The wafer carrier 142 may be made of any material suitable for epitaxial growth thereon, such as a graphite or graphite coated material in an embodiment. In another embodiment, the materials that make up the wafer carrier 142 may be selected to match the desired crystal lattice arrangement or size. Similarly, depending on the wafer desired to be grown, various sizes of pockets 162 may be used.

도 6은 포켓(162) 중 하나를 도시하는 부분 사시도이다. 포켓(162)은 형상이 실질적으로 원통형인 측부 벽(166)을 각각 포함한다. 측부 벽(166)에 의해 형성된 원통체의 저부는 기판(168)이다. 실시예에서, 측부 벽(166)은 약 430 ㎛의 깊이를 가질 수 있다.6 is a partial perspective view showing one of the pockets 162. Fig. The pockets 162 each include a side wall 166 that is substantially cylindrical in shape. The bottom of the cylinder formed by the side walls 166 is the substrate 168. In an embodiment, the side walls 166 may have a depth of about 430 [mu] m.

실시예는 예시적인 것이며 제한을 의도하지 않는다. 추가적 실시예가 청구범위 내에 있다. 또한, 본 고안의 양태가 특정 실시예를 참조로 설명되었지만, 본 기술 분야의 숙련자는 청구범위에 의해 규정된 바와 같은 본 고안의 범주로부터 벗어나지 않고 형태 및 세부사항에 변경이 이루어질 수 있다는 것을 알 수 있을 것이다.The embodiments are illustrative and not intended to be limiting. Additional embodiments are within the claims. Furthermore, although aspects of the present invention have been described with reference to particular embodiments, those skilled in the art will readily appreciate that changes may be made in form and detail without departing from the scope of the present invention as defined by the claims There will be.

Claims (11)

화학 기상 증착 장치와 함께 사용하도록 구성된 웨이퍼 캐리어로서
서로 대향 배열된 상단 표면 및 저부 표면을 갖는 본체, 및
웨이퍼 캐리어의 상단 표면에 형성된 복수의 포켓을 포함하는 웨이퍼 캐리어에 있어서,
상기 복수의 포켓은 총 14개 포켓으로 구성되고, 각 포켓은 두 개의 원 중 하나를 따라 배열되며, 상기 두 개의 원은 서로 동심이면서 상단 표면의 주연부에 의해 형성되는 원형 윤곽과 동심인 개선점을 포함하는 웨이퍼 캐리어.As a wafer carrier configured for use with a chemical vapor deposition apparatus
A body having a top surface and a bottom surface arranged opposite one another, and
A wafer carrier comprising a plurality of pockets formed in an upper surface of a wafer carrier,
Wherein the plurality of pockets comprises a total of 14 pockets, each pocket being arranged along one of the two circles, the two circles being concentric with one another and concentric with the circular contour defined by the periphery of the top surface Wafer carrier. 제1항에 있어서,
두 개의 원 중 제1 원 둘레에 복수의 포켓 중 4개 포켓이 배열되고,
두 개의 원 중 제2 원 둘레에 복수의 포켓 중 10개 포켓이 배열되는 웨이퍼 캐리어.The method according to claim 1,
Four pockets of a plurality of pockets are arranged around a first one of the two circles,
A wafer carrier in which 10 pockets of a plurality of pockets are arranged around a second one of the two circles. 제1항 또는 제2항에 있어서, 제1 원은 제2 원에 의해 둘러싸여지는 웨이퍼 캐리어.3. The wafer carrier as claimed in claim 1 or 2, wherein the first circle is surrounded by a second circle. 제1항에 있어서, 상단 표면은 약 300 mm의 직경을 포함하는 웨이퍼 캐리어.2. The wafer carrier of claim 1, wherein the top surface comprises a diameter of about 300 mm. 제1항 또는 제4항에 있어서, 복수의 포켓 각각은 약 50 mm의 직경의 포켓을 포함하는 웨이퍼 캐리어.5. The wafer carrier of claim 1 or 4, wherein each of the plurality of pockets comprises a pocket having a diameter of about 50 mm. 제1항 또는 제4항에 있어서, 복수의 포켓 각각은 약 430 ㎛의 깊이를 갖는 반경방향 벽을 포함하는 웨이퍼 캐리어.5. The wafer carrier of claim 1 or 4, wherein each of the plurality of pockets comprises a radial wall having a depth of about 430 [mu] m. 제1항에 있어서, 저부 표면에 배열된 로킹 구조부를 더 포함하는 웨이퍼 캐리어.The wafer carrier of claim 1, further comprising a locking structure arranged on a bottom surface. 제7항에 있어서, 로킹 구조부는 저부 표면의 기하학적 중심에 배열되는 웨이퍼 캐리어.8. The wafer carrier of claim 7, wherein the locking structure is arranged in the geometric center of the bottom surface. 제7항 또는 제8항에 있어서, 로킹 구조부는 스플라인, 척 또는 키이형 피팅으로 구성되는 그룹으로부터 선택되는 웨이퍼 캐리어.9. The wafer carrier of claim 7 or 8, wherein the locking structure is selected from the group consisting of splines, chucks, or keyed fittings. 제1항에 있어서, 상단 표면 및 저부 표면 각각은 직경을 포함하고, 상단 표면의 직경은 저부 표면의 직경보다 큰 웨이퍼 캐리어.2. The wafer carrier of claim 1 wherein the top surface and bottom surface each comprise a diameter and the diameter of the top surface is greater than the diameter of the bottom surface. 제1항에 있어서, 웨이퍼 캐리어는 금속 산화물 화학 기상 증착 장치와 함께 사용되도록 구성되는 웨이퍼 캐리어.2. The wafer carrier of claim 1, wherein the wafer carrier is configured for use with a metal oxide chemical vapor deposition apparatus.
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