TW201315593A - Manufacturing method of electronic device and manufacturing method of carrier substrate with resin layer - Google Patents
Manufacturing method of electronic device and manufacturing method of carrier substrate with resin layer Download PDFInfo
- Publication number
- TW201315593A TW201315593A TW101137510A TW101137510A TW201315593A TW 201315593 A TW201315593 A TW 201315593A TW 101137510 A TW101137510 A TW 101137510A TW 101137510 A TW101137510 A TW 101137510A TW 201315593 A TW201315593 A TW 201315593A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- layer
- carrier substrate
- resin layer
- electronic device
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 568
- 229920005989 resin Polymers 0.000 title claims abstract description 276
- 239000011347 resin Substances 0.000 title claims abstract description 276
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 58
- 239000011521 glass Substances 0.000 claims abstract description 211
- 239000011342 resin composition Substances 0.000 claims abstract description 116
- 238000000034 method Methods 0.000 claims abstract description 82
- 238000010030 laminating Methods 0.000 claims abstract description 20
- 238000000926 separation method Methods 0.000 claims abstract description 20
- 230000001747 exhibiting effect Effects 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 22
- -1 methyl fluorenyl group Chemical group 0.000 claims description 22
- 238000003475 lamination Methods 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 17
- JMBPWMGVERNEJY-UHFFFAOYSA-N helium;hydrate Chemical compound [He].O JMBPWMGVERNEJY-UHFFFAOYSA-N 0.000 claims description 15
- 125000003342 alkenyl group Chemical group 0.000 claims description 14
- 229920002050 silicone resin Polymers 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 12
- 238000007259 addition reaction Methods 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 150000002222 fluorine compounds Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 396
- 239000005340 laminated glass Substances 0.000 description 34
- 239000003921 oil Substances 0.000 description 34
- 238000001723 curing Methods 0.000 description 24
- 239000000463 material Substances 0.000 description 21
- 238000000576 coating method Methods 0.000 description 19
- 239000003822 epoxy resin Substances 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 18
- 229920000647 polyepoxide Polymers 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000010408 film Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 150000002923 oximes Chemical class 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000003014 reinforcing effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 239000005388 borosilicate glass Substances 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- LNOLJFCCYQZFBQ-BUHFOSPRSA-N (ne)-n-[(4-nitrophenyl)-phenylmethylidene]hydroxylamine Chemical compound C=1C=C([N+]([O-])=O)C=CC=1C(=N/O)/C1=CC=CC=C1 LNOLJFCCYQZFBQ-BUHFOSPRSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000003431 cross linking reagent Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000005871 repellent Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000005361 soda-lime glass Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000001029 thermal curing Methods 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000005345 chemically strengthened glass Substances 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000013585 weight reducing agent Substances 0.000 description 3
- KDTWXGUXWNBYGS-UHFFFAOYSA-N 1,2,3,3,4,4-hexamethyl-5H-diazepine Chemical compound CC1(C(N(N(C=CC1)C)C)(C)C)C KDTWXGUXWNBYGS-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 239000002168 alkylating agent Substances 0.000 description 2
- 229940100198 alkylating agent Drugs 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000007611 bar coating method Methods 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 125000006267 biphenyl group Chemical group 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001227 electron beam curing Methods 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- 125000000687 hydroquinonyl group Chemical group C1(O)=C(C=C(O)C=C1)* 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000006303 photolysis reaction Methods 0.000 description 2
- 230000015843 photosynthesis, light reaction Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 230000002940 repellent Effects 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- CNHDIAIOKMXOLK-UHFFFAOYSA-N toluquinol Chemical compound CC1=CC(O)=CC=C1O CNHDIAIOKMXOLK-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- UVHXEHGUEKARKZ-UHFFFAOYSA-N 1-ethenylanthracene Chemical compound C1=CC=C2C=C3C(C=C)=CC=CC3=CC2=C1 UVHXEHGUEKARKZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- KFVPJMZRRXCXAO-UHFFFAOYSA-N [He].[O] Chemical compound [He].[O] KFVPJMZRRXCXAO-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 229910021525 ceramic electrolyte Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N hydroquinone methyl ether Natural products COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- WNDSQRGJJHSKCQ-UHFFFAOYSA-N naphthalene-1,5-dicarbonitrile Chemical compound C1=CC=C2C(C#N)=CC=CC2=C1C#N WNDSQRGJJHSKCQ-UHFFFAOYSA-N 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- CJJMLLCUQDSZIZ-UHFFFAOYSA-N oxobismuth Chemical compound [Bi]=O CJJMLLCUQDSZIZ-UHFFFAOYSA-N 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 230000003442 weekly effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10128—Treatment of at least one glass sheet
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1313—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells specially adapted for a particular application
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/041—Provisions for preventing damage caused by corpuscular radiation, e.g. for space applications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
本發明係關於一種電子裝置之製造方法、及附樹脂層之載體基板之製造方法。 The present invention relates to a method of manufacturing an electronic device and a method of manufacturing a carrier substrate with a resin layer.
近年來，太陽電池(PV，Photovoltaic，太陽能光伏)、液晶面板(LCD，Liquid Crystal Display，液晶顯示器))、有機EL(Electro Luminescence，電致發光)面板(OLED，Organic Light Emitting Diode，有機發光二極體)等裝置(電子機器)之薄型化、輕量化正不斷進展，該等裝置所使用之玻璃基板之薄板化正不斷進展。若因薄板化而導致玻璃基板之強度不足，則於裝置之製造步驟中玻璃基板之操作性降低。 In recent years, solar cells (PV, Photovoltaic, liquid crystal displays), organic EL (Electro Luminescence) panels (OLED, Organic Light Emitting Diode, organic light-emitting diodes) The thinning and weight reduction of devices (electronic devices) such as the polar body are progressing, and the thinning of the glass substrate used in these devices is progressing. If the strength of the glass substrate is insufficient due to the thinning, the handleability of the glass substrate is lowered in the manufacturing process of the device.
因此，自先前以來廣泛採用於在較最終厚度厚之玻璃基板上形成裝置用構件(例如，薄膜電晶體)後，藉由化學蝕刻處理而使玻璃基板薄板化之方法。然而，於該方法中，例如於使1片玻璃基板之厚度自0.7 mm薄板化為0.2 mm或0.1 mm之情形時，利用蝕刻液將原本之玻璃基板之大半材料削掉，故而就生產性或原材料之使用效率之觀點而言欠佳。 Therefore, a method of thinning a glass substrate by chemical etching treatment after forming a device member (for example, a thin film transistor) on a glass substrate having a thicker final thickness has been widely used. However, in this method, for example, when the thickness of one glass substrate is reduced from 0.7 mm to 0.2 mm or 0.1 mm, most of the original glass substrate is scraped off by an etching solution, so that productivity or The use efficiency of raw materials is not good.
又，於藉由上述化學蝕刻而產生之玻璃基板之薄板化方法中，於在玻璃基板表面存在微小之損傷之情形時，存在因蝕刻處理而以損傷為起點形成微小之凹坑(腐蝕坑)而成為光學上之缺陷之情況。 Further, in the thinning method of the glass substrate produced by the above chemical etching, when there is a slight damage on the surface of the glass substrate, minute pits (corrosion pits) are formed from the damage by the etching process. It becomes a case of optical defects.
最近，為應對上述問題，提出有準備積層有玻璃基板與增強板之積層體，於在積層體之玻璃基板上形成顯示裝置等電子裝置用構件後自玻璃基板分離增強板之方法(例如，參照專利文獻1)。增強板具有支持體(以下，亦適當稱為載體基板)、及固定於該支持體上之樹脂層，且樹脂層與玻璃基板可剝離地密接。將積層體之樹脂層與玻璃基板之界面剝離，自玻璃基板分離之增強板可與新玻璃基板積層，作為積層體而再利用。 In order to cope with the above problems, a method of separating a reinforcing plate from a glass substrate by forming a laminated body of a glass substrate and a reinforcing plate, and forming a member for an electronic device such as a display device on a glass substrate of a laminated body has been proposed (for example, refer to Patent Document 1). The reinforcing plate has a support (hereinafter also referred to as a carrier substrate as appropriate) and a resin layer fixed to the support, and the resin layer and the glass substrate are detachably adhered to each other. The interface between the resin layer of the laminate and the glass substrate is peeled off, and the reinforcing plate separated from the glass substrate can be laminated with the new glass substrate to be reused as a laminate.
[專利文獻1]國際公開第07/018028號小冊子 [Patent Document 1] International Publication No. 07/018028
另一方面，近年來，伴隨著電子裝置之高性能化之要求，電子裝置用構件之更微小化不斷進展，所實施之步驟更繁雜化。即便於該狀況下，亦要求生產性良好地製造性能優異之電子裝置。 On the other hand, in recent years, with the demand for higher performance of electronic devices, the miniaturization of components for electronic devices has progressed, and the steps performed have become more complicated. That is, in this case, it is also required to manufacture an electronic device excellent in performance with good productivity.
本發明者等人使用專利文獻1中記載之積層體進行電子裝置之製造，結果發現有所獲得之電子裝置之性能低劣之情形。例如，進行OLED面板之製作之結果為，有於該面板之驅動區域內產生顯示不均之情形。 When the inventors of the present invention used the laminate described in Patent Document 1 to manufacture an electronic device, it was found that the performance of the obtained electronic device was inferior. For example, as a result of the fabrication of the OLED panel, there is a case where display unevenness occurs in the driving region of the panel.
本發明者等人對上述原因進行了研究，結果發現，存在專利文獻1中記載之積層體中之樹脂層之厚度不均(尤其於周緣部具有凸部)，其會損害玻璃基板之平坦性，結果使 電子裝置之製造良率降低。 The inventors of the present invention have studied the above-mentioned causes and found that the thickness of the resin layer in the laminate described in Patent Document 1 is uneven (particularly, the peripheral portion has a convex portion), which may impair the flatness of the glass substrate. Result The manufacturing yield of the electronic device is lowered.
於圖6(A)中表示於製作專利文獻1中記載之積層體時所使用之具有載體基板14與樹脂層18之附樹脂層之載體基板22之剖面圖。於附樹脂層之載體基板22中之樹脂層18之露出表面上積層玻璃基板，而形成積層體。如圖6(A)所示，利用專利文獻1中記載之方法形成之樹脂層18具有厚度不均。尤其，該厚度不均於樹脂層18之外周緣附近較為顯著，且形成凸部34。若於具有此種厚度不均之樹脂層18上積層玻璃基板24，則玻璃基板24之中央部以凹陷之方式彎曲，而損害玻璃基板24之平坦性(參照圖6(B))。由於損害玻璃基板24之平坦性，故而有產生配置於玻璃基板24上之電子裝置用構件之位置偏移等，結果引起電子裝置之性能降低之虞。 A cross-sectional view of the carrier substrate 22 having the carrier layer 14 and the resin layer 18 of the resin layer 18 used in the production of the laminate described in Patent Document 1 is shown in Fig. 6(A). A glass substrate is laminated on the exposed surface of the resin layer 18 in the carrier substrate 22 with the resin layer to form a laminate. As shown in FIG. 6(A), the resin layer 18 formed by the method described in Patent Document 1 has thickness unevenness. In particular, the thickness is not uniform near the periphery of the resin layer 18, and the convex portion 34 is formed. When the glass substrate 24 is laminated on the resin layer 18 having such a thickness unevenness, the central portion of the glass substrate 24 is bent in a concave manner to impair the flatness of the glass substrate 24 (see FIG. 6(B)). Since the flatness of the glass substrate 24 is impaired, the positional displacement of the member for an electronic device disposed on the glass substrate 24 is caused, and as a result, the performance of the electronic device is lowered.
又，如圖6(B)所示，若於此種附樹脂層之載體基板22上積層玻璃基板24，則於玻璃基板24與樹脂層18之間形成空隙36。積層體被供給至電子裝置用構件之製造步驟，且導電層等功能層形成於玻璃基板24之露出表面上。此時，使用抗蝕液等各種溶液。 Further, as shown in FIG. 6(B), when the glass substrate 24 is laminated on the carrier substrate 22 with such a resin layer, a void 36 is formed between the glass substrate 24 and the resin layer 18. The laminated body is supplied to a manufacturing step of the member for an electronic device, and a functional layer such as a conductive layer is formed on the exposed surface of the glass substrate 24. At this time, various solutions such as a resist liquid are used.
若於積層體中存在空隙36，則各種溶液藉由毛細現象而進入。進入至空隙36之材料即便藉由清洗亦難以去除，乾燥後作為異物而容易殘留。該異物因加熱處理等而成為污染電子裝置用構件之污染源，故而使電子裝置之性能降低，或使良率降低。 If voids 36 are present in the laminate, the various solutions enter by capillary action. The material that has entered the gap 36 is difficult to remove even by washing, and is easily left as a foreign matter after drying. Since the foreign matter becomes a source of contamination of the member for contaminating the electronic device by heat treatment or the like, the performance of the electronic device is lowered or the yield is lowered.
本發明係鑒於上述問題而完成者，其目的在於提供一種 使用平坦性優異之附樹脂層之載體基板之生產性優異的電子裝置的製造方法。 The present invention has been made in view of the above problems, and an object thereof is to provide a A method of producing an electronic device excellent in productivity of a carrier substrate with a resin layer excellent in flatness.
又，本發明之目的亦在於提供一種固定有表現對於對象而可裝卸之密接性且平坦性優異之樹脂層之附樹脂層之電子裝置之製造方法。 Moreover, an object of the present invention is to provide a method of manufacturing an electronic device in which a resin layer having a resin layer which is excellent in flatness and which is excellent in flatness and which is detachable from a target is fixed.
本發明者等人為了解決上述問題而進行了銳意研究，結果完成本發明。 The present inventors conducted intensive studies in order to solve the above problems, and as a result, completed the present invention.
即，本發明之第1態樣係一種電子裝置之製造方法，其係製造包含玻璃基板與電子裝置用構件之電子裝置者，且包括：輔助基板準備步驟，其係準備具有表現易剝離性之表面之剝離性輔助基板；第1積層步驟，其係形成依序具有上述剝離性輔助基板、位於上述剝離性輔助基板之表現易剝離性之表面上的未硬化之硬化性樹脂組成物層及載體基板之硬化前積層體；硬化步驟，其係使上述硬化前積層體中之上述未硬化之硬化性樹脂組成物層硬化，而獲得具有樹脂層之硬化後積層體；第1分離步驟，其係自上述硬化後積層體將具有上述載體基板及與上述載體基板之表面接觸之上述樹脂層之附樹脂層之載體基板分離；第2積層步驟，其係於上述附樹脂層之載體基板中之樹脂層表面上可剝離地積層玻璃基板；構件形成步驟，其係於上述玻璃基板之表面上形成電子裝置用構件，而獲得附電子裝置用構件之積層體；以及第2分離步驟，其係自上述附電子裝置用構件之積層體將上述附樹脂層之載體基板去除，而獲 得具有上述玻璃基板與上述電子裝置用構件之電子裝置。 That is, the first aspect of the present invention is a method of manufacturing an electronic device, which is an electronic device including a glass substrate and a member for an electronic device, and includes an auxiliary substrate preparation step prepared to exhibit easy peelability. The surface-repellent auxiliary substrate; the first build-up step of sequentially forming the detachable auxiliary substrate and the uncured curable resin composition layer and the carrier on the surface of the peelable auxiliary substrate which exhibits easy peelability a layered body before hardening of the substrate; and a hardening step of hardening the uncured curable resin composition layer in the layered body before curing to obtain a cured layered body having a resin layer; and a first separating step After the hardening, the laminated body separates the carrier substrate having the resin substrate and the resin layer of the resin layer in contact with the surface of the carrier substrate; and the second lamination step is performed on the resin in the carrier substrate with the resin layer a layer of glass substrate releasably laminated on the surface of the layer; a member forming step of forming an electronic device on the surface of the glass substrate a laminate for obtaining an electronic device member by using a member; and a second separation step of removing the carrier substrate with the resin layer from the laminate of the member for an electronic device An electronic device having the above glass substrate and the above-described member for an electronic device is obtained.
於第1態樣中，較佳為上述未硬化之硬化性樹脂組成物層之外形尺寸較上述載體基板之外形尺寸大，且於上述第1積層步驟中，以於上述未硬化之硬化性樹脂組成物層中殘留未與上述載體基板接觸之周緣區域之方式，將上述載體基板積層於上述未硬化之硬化性樹脂組成物層上。 In the first aspect, preferably, the uncured curable resin composition layer has a larger outer dimension than the carrier substrate, and in the first laminating step, the uncured curable resin The carrier substrate is laminated on the uncured curable resin composition layer so that the peripheral layer region which is not in contact with the carrier substrate remains in the composition layer.
於第1態樣中，較佳為上述第1積層步驟係如下之步驟：於上述剝離性輔助基板之表現易剝離性之表面上塗佈硬化性樹脂組成物，形成上述未硬化之硬化性樹脂組成物層，進而於上述未硬化之硬化性樹脂組成物層上積層上述載體基板。 In the first aspect, preferably, the first laminating step is a step of applying a curable resin composition to the surface of the releasable auxiliary substrate which exhibits easy peelability to form the uncured curable resin. The composition layer is further laminated on the uncured curable resin composition layer.
於第1態樣中，較佳為進而包括消泡步驟，該消泡步驟係於上述第1積層步驟後且上述硬化步驟前進行上述未硬化之硬化性樹脂組成物層之消泡處理。 In the first aspect, it is preferable to further include a defoaming step of performing the defoaming treatment of the uncured curable resin composition layer after the first lamination step and before the curing step.
於第1態樣中，較佳為上述輔助基板準備步驟係如下之步驟：使用剝離劑對輔助基板之表面進行處理，而獲得具有表現易剝離性之表面之剝離性輔助基板。 In the first aspect, preferably, the auxiliary substrate preparing step is a step of treating the surface of the auxiliary substrate with a release agent to obtain a releasable auxiliary substrate having a surface exhibiting easy peelability.
較佳為上述剝離劑含有具有甲基矽基或氟烷基之化合物。 It is preferred that the release agent contains a compound having a methyl fluorenyl group or a fluoroalkyl group.
或者，較佳為上述剝離劑含有矽氧油或氟系化合物。 Alternatively, it is preferred that the release agent contains an oxime oil or a fluorine compound.
於第1態樣中，較佳為上述樹脂層含有矽氧樹脂。 In the first aspect, it is preferred that the resin layer contains a silicone resin.
於第1態樣中，較佳為上述樹脂層為包含具有烯基之有機烯基聚矽氧烷、與具有鍵結於矽原子之氫原子之有機氫聚矽氧烷之組合的加成反應型矽氧之硬化物。 In the first aspect, preferably, the resin layer is an addition reaction comprising a combination of an alkenyl group-containing organic alkenyl polyoxyalkylene and an organic hydrogen polyoxyalkylene having a hydrogen atom bonded to a halogen atom. Type of hardened oxygen.
此處，較佳為上述有機氫聚矽氧烷之鍵結於矽原子之氫原子相對於上述有機烯基聚矽氧烷之烯基之莫耳比為0.5~2。 Here, it is preferred that the organic hydrogen polyoxyalkylene has a molar ratio of a hydrogen atom bonded to a halogen atom to an alkenyl group of the above organic alkenyl polyoxyalkylene of 0.5 to 2.
於第1態樣中，較佳為上述樹脂層含有非硬化性之有機聚矽氧烷5質量%以下。 In the first aspect, the resin layer preferably contains 5% by mass or less of the non-hardenable organopolyoxane.
本發明之第2態樣係一種附樹脂層之載體基板之製造方法，其係製造用於玻璃基板之搬送，且具有與上述玻璃基板之下表面可剝離地密接之樹脂層之附樹脂層之載體基板者，且包括：輔助基板準備步驟，其係準備表面表現易剝離性之剝離性輔助基板；積層步驟，其係形成依序具有上述剝離性輔助基板、位於上述剝離性輔助基板之表現易剝離性之表面上的未硬化之硬化性樹脂組成物層及載體基板之硬化前積層體；硬化步驟，其係使上述硬化前積層體中之上述未硬化之硬化性樹脂組成物層硬化，而獲得具有樹脂層之硬化後積層體；以及分離步驟，其係自上述硬化後積層體將具有上述載體基板及與上述載體基板之表面接觸之上述樹脂層之附樹脂層之載體基板分離。 A second aspect of the present invention provides a method for producing a carrier substrate with a resin layer, which is a resin-attached layer for a resin substrate which is detachably adhered to a lower surface of the glass substrate. The carrier substrate includes: an auxiliary substrate preparing step of preparing a peeling auxiliary substrate having a surface exhibiting easy peeling property; and a laminating step of sequentially forming the peeling auxiliary substrate and performing the peeling auxiliary substrate a uncured curable resin composition layer on the surface of the peeling and a pre-cured laminate of the carrier substrate; and a hardening step of hardening the uncured curable resin composition layer in the pre-hardened laminate A cured laminated body having a resin layer; and a separating step of separating the carrier substrate having the resin substrate and the resin layer of the resin layer in contact with the surface of the carrier substrate from the cured laminated body.
於第2態樣中，較佳為上述未硬化之硬化性樹脂組成物層之外形尺寸較上述載體基板之外形尺寸大，且於上述積層步驟中，以於上述未硬化之硬化性樹脂組成物層中殘留未與上述載體基板接觸之周緣區域之方式，將上述載體基板積層於上述未硬化之硬化性樹脂組成物層上。 In the second aspect, preferably, the uncured curable resin composition layer has a larger outer dimension than the carrier substrate, and in the laminating step, the uncured curable resin composition The carrier substrate is laminated on the uncured curable resin composition layer so that the peripheral portion of the layer is not in contact with the carrier substrate.
於第2態樣中，較佳為上述積層步驟係如下之步驟：於上述剝離性輔助基板之表現易剝離性之表面上塗佈硬化性 樹脂組成物，形成上述未硬化之硬化性樹脂組成物層，進而於上述未硬化之硬化性樹脂組成物層上積層載體基板。 In the second aspect, preferably, the laminating step is a step of applying a hardenability to the surface of the peelable auxiliary substrate which exhibits easy peelability. In the resin composition, the uncured curable resin composition layer is formed, and a carrier substrate is laminated on the uncured curable resin composition layer.
於第2態樣中，較佳為進而包括消泡步驟，該消泡步驟係於上述積層步驟後且上述硬化步驟前進行上述未硬化之硬化性樹脂組成物層之消泡處理。 In the second aspect, it is preferable to further include a defoaming step of performing the defoaming treatment of the uncured curable resin composition layer after the laminating step and before the curing step.
於第2態樣中，較佳為上述輔助基板準備步驟係如下之步驟：使用剝離劑對輔助基板之表面進行處理，而獲得具有表現易剝離性之表面之剝離性輔助基板。 In the second aspect, preferably, the auxiliary substrate preparing step is a step of treating the surface of the auxiliary substrate with a release agent to obtain a releasable auxiliary substrate having a surface exhibiting easy peelability.
根據本發明，可提供一種使用平坦性優異之附樹脂層之載體基板之生產性優異的電子裝置的製造方法。 According to the present invention, it is possible to provide a method for producing an electronic device which is excellent in productivity of a carrier substrate having a resin layer excellent in flatness.
又，根據本發明，可提供一種固定有表現對於對象而可裝卸之密接性且平坦性優異之樹脂層之附樹脂層之電子裝置之製造方法。 Moreover, according to the present invention, it is possible to provide a method of manufacturing an electronic device in which a resin layer having a resin layer which is excellent in flatness and which is excellent in flatness and which is detachable from a target is fixed.
以下，參照圖式對用以實施本發明之形態進行說明，但本發明並不限制於以下實施形態，可於不脫離本發明之範圍之情況下對以下實施形態施加各種變形及置換。 In the following, the embodiments of the present invention are described with reference to the drawings, but the present invention is not limited to the following embodiments, and various modifications and substitutions may be made in the following embodiments without departing from the scope of the invention.
本發明者等人對專利文獻1之發明之問題進行了研究，結果發現，受到硬化性樹脂組成物之塗佈所產生之影響、或空氣界面之表面張力之影響，而於樹脂層表面產生凹凸。 The inventors of the present invention have studied the problems of the invention of Patent Document 1, and have found that the surface of the resin layer is unevenly affected by the influence of the application of the curable resin composition or the surface tension of the air interface. .
因此，發現於使樹脂層以未硬化之狀態與表現特定之剝離性之基板接觸而賦予有平坦性後，使其硬化，藉此可製 造包含具有特定之平坦性之樹脂層之附樹脂層之載體基板。 Therefore, it has been found that when the resin layer is brought into contact with a substrate exhibiting specific releasability in an uncured state, flatness is imparted, and then cured. A carrier substrate comprising a resin layer having a specific flatness of a resin layer is formed.
以下，按照各步驟之順序對電子裝置之製造方法進行說明。 Hereinafter, a method of manufacturing an electronic device will be described in the order of the respective steps.
再者，於本發明中，將下述之硬化後積層體中之樹脂層與載體基板之層之界面之剝離強度較玻璃基板之層與樹脂層之界面之剝離強度高於以下亦稱為樹脂層固定於載體基板，且樹脂層可剝離地密接於玻璃基板。 Further, in the present invention, the peeling strength at the interface between the resin layer and the layer of the carrier substrate in the cured laminated body described below is higher than the peeling strength at the interface between the layer of the glass substrate and the resin layer, which is also referred to as a resin. The layer is fixed to the carrier substrate, and the resin layer is detachably adhered to the glass substrate.
圖1係表示本發明之電子裝置之製造方法之一實施形態之製造步驟的流程圖。如圖1所示，電子裝置之製造方法包括：輔助基板準備步驟S102、第1積層步驟S104、硬化步驟S106、第1分離步驟S108、第2積層步驟S110、構件形成步驟S112、及第2分離步驟S114。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing the manufacturing steps of an embodiment of a method of manufacturing an electronic device according to the present invention. As shown in FIG. 1, the manufacturing method of the electronic device includes an auxiliary substrate preparation step S102, a first buildup step S104, a hardening step S106, a first separation step S108, a second buildup step S110, a member forming step S112, and a second separation. Step S114.
又，圖2(A)~2(G)係依序表示本發明之電子裝置之製造方法之各製造步驟之模式性剖面圖。 2(A) to 2(G) are schematic cross-sectional views showing respective manufacturing steps of the method of manufacturing the electronic device of the present invention.
以下，一面參照圖2(A)~2(G)一面對各步驟中使用之材料及其次序進行詳細敍述。首先，對輔助基板準備步驟S102進行詳細敍述。 Hereinafter, the materials used in the respective steps and the order thereof will be described in detail with reference to FIGS. 2(A) to 2(G). First, the auxiliary substrate preparation step S102 will be described in detail.
輔助基板準備步驟S102係準備具有表現易剝離性之表面之剝離性輔助基板之步驟。圖2(A)所示之剝離性輔助基板10係指具有對於下述之樹脂層表現易剝離性之表面10a之支持板。剝離性輔助基板10可與下述之樹脂層可剝離地密 接。再者，於圖2(A)中，表現易剝離性之表面10a僅形成於剝離性輔助基板10之一主表面，但其他表面亦可表現易剝離性。 The auxiliary substrate preparation step S102 is a step of preparing a releasable auxiliary substrate having a surface exhibiting easy peelability. The releasable auxiliary substrate 10 shown in Fig. 2(A) is a support sheet having a surface 10a which exhibits easy peelability to the resin layer described below. The peelable auxiliary substrate 10 can be peelably densely bonded to the resin layer described below. Pick up. Further, in Fig. 2(A), the surface 10a exhibiting easy peelability is formed only on one main surface of the releasable auxiliary substrate 10, but other surfaces may exhibit easy peelability.
以下，對本步驟S102中準備之剝離性輔助基板之態樣進行詳細敍述。 Hereinafter, the aspect of the releasable auxiliary substrate prepared in the step S102 will be described in detail.
剝離性輔助基板係支持並增強下述之未硬化之硬化性樹脂組成物層及玻璃基板。又，剝離性輔助基板係為了提高使未硬化之硬化性樹脂組成物層硬化而獲得之樹脂層之表面之平坦性而使用之基板，與未硬化之狀態之硬化性樹脂組成物層接觸而使該層之表面平坦，從而抑制樹脂層之厚度不均。再者，所謂剝離性輔助基板之表面具有之易剝離性，係指於對下述之硬化後積層體施加用以將剝離性輔助基板剝離之外力之情形時，不於載體基板與樹脂層之界面及樹脂層內部剝離而於剝離性輔助基板與樹脂層之界面剝離之性質。 The peeling auxiliary substrate supports and enhances the uncured curable resin composition layer and the glass substrate described below. In addition, the repellent auxiliary substrate is a substrate which is used to improve the flatness of the surface of the resin layer obtained by curing the uncured curable resin composition layer, and is brought into contact with the uncured curable resin composition layer. The surface of the layer is flat, thereby suppressing thickness unevenness of the resin layer. In addition, the surface of the releasable auxiliary substrate has an easy-peelability, and is a case where a force for peeling off the releasable auxiliary substrate is applied to the laminated body after curing as described below, and the carrier substrate and the resin layer are not used. The interface and the inside of the resin layer are peeled off to peel off the interface between the releasable auxiliary substrate and the resin layer.
就容易進一步進行剝離性輔助基板與樹脂層之界面之剝離之方面而言，剝離性輔助基板之表現易剝離性之表面之水接觸角較佳為90°以上，更佳為90~120°，進而較佳為90~110°。 The water contact angle of the surface of the releasable auxiliary substrate which exhibits easy peelability is preferably 90° or more, more preferably 90 to 120°, in terms of facilitating further peeling of the interface between the releasable auxiliary substrate and the resin layer. Further preferably, it is 90 to 110°.
再者，水接觸角之測定可使用接觸角計(Kurusu公司製造，DROP SHAPE ANALYSIS SYSTEM DSA 10Mk2等)進行。 Further, the measurement of the water contact angle can be carried out using a contact angle meter (manufactured by Kurusu Co., Ltd., DROP SHAPE ANALYSIS SYSTEM DSA 10Mk2, etc.).
構成剝離性輔助基板之材料只要其表面對於樹脂層表現 易剝離性，則並無特別限制。例如可使用玻璃板、塑膠板(例如，矽氧基板)、SUS(Steel Use Stainless，日本不鏽鋼標準)板等金屬板、或積層有該等之基板(上層具有矽氧基板、下層具有玻璃基板之積層基板)等。 The material constituting the peeling auxiliary substrate is as long as its surface is expressed for the resin layer There is no particular limitation on the ease of peeling. For example, a metal plate such as a glass plate, a plastic plate (for example, a methoxy plate), a SUS (Steel Use Stainless) plate, or a substrate laminated with the same may be used (the upper layer has a ruthenium oxide plate and the lower layer has a glass substrate). Laminated substrate).
剝離性輔助基板之厚度並無特別限制，可較所積層之載體基板厚，亦可較其薄。就可使用現行之製造裝置之方面、及操作性之方面而言，剝離性輔助基板之厚度較佳為0.3~3.0 mm。 The thickness of the releasable auxiliary substrate is not particularly limited, and may be thicker or thinner than the laminated substrate. The thickness of the releasable auxiliary substrate is preferably from 0.3 to 3.0 mm in terms of aspects of the current manufacturing apparatus and operability.
就下述之硬化步驟S106中獲得之樹脂層之平坦性更優異之方面而言，剝離性輔助基板之表現易剝離性之表面之表面粗糙度(Ra)較佳為2.0 nm以下，更佳為1.0 nm以下，進而較佳為0.5 nm以下。下限並無特別限制，尤佳為0 nm。 The surface roughness (Ra) of the surface of the releasable auxiliary substrate which exhibits easy peelability is preferably 2.0 nm or less, more preferably in terms of the flatness of the resin layer obtained in the hardening step S106 described below. It is 1.0 nm or less, and more preferably 0.5 nm or less. The lower limit is not particularly limited, and is preferably 0 nm.
再者，表面粗糙度(Ra)之測定可使用原子力顯微鏡(Pacific Nanotechnology公司製造，Nano Scope IIIa；Scan Rate 1.0 Hz，Sample Lines 256，Off-line Modify Flatten order-2，Planefit order-2等)且依據JIS(Japanese Industrial Standards，日本工業標準)JIS B 0601(2001)進行。 Further, the surface roughness (Ra) can be measured by an atomic force microscope (manufactured by Pacific Nanotechnology, Nano Scope IIIa; Scan Rate 1.0 Hz, Sample Lines 256, Off-line Modify Flatten order-2, Planefit order-2, etc.). It is carried out in accordance with JIS (Japanese Industrial Standards) JIS B 0601 (2001).
作為輔助基板準備步驟之較佳態樣，可較佳列舉如下之步驟：使用剝離劑對輔助基板之表面進行處理，而獲得具有表現易剝離性之表面之剝離性輔助基板。藉由實施該步驟，而不管輔助基板為何種類，均可獲得具有表現易剝離性之表面之剝離性輔助基板。 As a preferred aspect of the auxiliary substrate preparation step, a step of treating the surface of the auxiliary substrate with a release agent to obtain a releasable auxiliary substrate having a surface exhibiting easy peelability is preferably exemplified. By performing this step, regardless of the type of the auxiliary substrate, a releasable auxiliary substrate having a surface exhibiting easy peelability can be obtained.
首先，對本步驟中使用之輔助基板及剝離劑進行詳細敍 述，其後對該步驟之次序進行詳細敍述。 First, the auxiliary substrate and the stripping agent used in this step are described in detail. The order of the steps will be described in detail later.
輔助基板係支持並增強下述之未硬化之硬化性樹脂組成物層及玻璃基板。 The auxiliary substrate supports and reinforces the uncured curable resin composition layer and the glass substrate described below.
輔助基板之種類並無特別限制，例如可使用玻璃板、塑膠板、SUS板等金屬板等。輔助基板於硬化步驟S106伴隨有熱處理之情形時，較佳為由與載體基板之線膨脹係數之差較小之材料形成，更佳為由與載體基板相同之材料形成。尤其，於載體基板為玻璃基板之情形時，較佳為輔助基板包含與載體基板相同之玻璃材料之玻璃板。 The type of the auxiliary substrate is not particularly limited, and for example, a metal plate such as a glass plate, a plastic plate, or a SUS plate can be used. When the auxiliary substrate is subjected to the heat treatment in the curing step S106, it is preferably formed of a material having a small difference from the linear expansion coefficient of the carrier substrate, and more preferably formed of the same material as the carrier substrate. In particular, when the carrier substrate is a glass substrate, it is preferred that the auxiliary substrate comprises a glass plate of the same glass material as the carrier substrate.
輔助基板之外形尺寸並無特別限制，通常與積層之未硬化之硬化性樹脂組成物層之外形尺寸為相同程度，或較未硬化之硬化性樹脂組成物層之外形尺寸大。 The outer shape of the auxiliary substrate is not particularly limited, and is usually the same as the outer shape of the layer of the uncured curable resin composition layer or the outer shape of the uncured curable resin composition layer.
作為剝離劑，可使用公知之剝離劑，例如可列舉：矽氧系化合物(例如，矽氧油等)、矽烷化劑(例如，六甲基二矽氮烷等)、氟系化合物(例如，氟樹脂等)等。剝離劑可用作乳液型、溶劑型、無溶劑型。就剝離力、安全性、成本等而言，作為一較佳例，可列舉含有甲基矽基(≡SiCH3、=Si(CH3)2、-Si(CH3)3中之任一者)或氟烷基(-CmF2m+1)(m較佳為1~6之整數)之化合物，作為其他較佳例，可列舉矽氧系化合物或氟系化合物，尤其較佳為矽氧油。 As the release agent, a known release agent can be used, and examples thereof include a ruthenium-based compound (for example, a sulfonium-oxygen oil), a decylating agent (for example, hexamethyldiazepine or the like), and a fluorine-based compound (for example, Fluorine resin, etc.). The release agent can be used as an emulsion type, a solvent type, or a solventless type. In terms of peeling force, safety, cost, and the like, as a preferred example, any one containing a methyl fluorenyl group (≡SiCH 3 , =Si(CH 3 ) 2 , or -Si(CH 3 ) 3 ) may be mentioned. Or a fluoroalkyl group (-C m F 2m+1 ) (m is preferably an integer of 1 to 6), and other preferred examples include a fluorene-based compound or a fluorine-based compound, and particularly preferably ruthenium. Oxygen oil.
矽氧油之種類並無特別限定，可例示：二甲基矽氧油、甲苯基矽氧油、甲基氫矽氧油等純矽氧油，於純矽氧油之 側鏈或末端導入有烷基、氫基、環氧基、胺基、羧基、聚醚基、鹵基等之改性矽氧油。作為純矽氧油之具體例，可列舉：甲基氫聚矽氧烷、二甲基聚矽氧烷、苯基甲基聚矽氧烷、二苯基聚矽氧烷等，且耐熱性以列舉之順序增加，耐熱性最高者為二苯基聚矽氧烷。該等矽氧油通常用於玻璃基板或經底層處理之金屬基板等基板之表面之撥水處理。 The type of the oxime oil is not particularly limited, and examples thereof include pure oxime oil such as dimethyl oxime oil, tolyl sulfonium oil, and methylhydroquinone oxy-oil, and pure oxime oil. A modified oxygenated oil such as an alkyl group, a hydrogen group, an epoxy group, an amine group, a carboxyl group, a polyether group or a halogen group is introduced into the side chain or the terminal. Specific examples of the pure helium oxide oil include methyl hydrogen polyoxyalkylene oxide, dimethyl polysiloxane, phenylmethyl polyoxyalkylene, diphenyl polyoxyalkylene, and the like, and heat resistance is The order of enumeration is increased, and the highest heat resistance is diphenyl polysiloxane. The helium oxide oil is usually used for water repellent treatment on the surface of a substrate such as a glass substrate or a metal substrate subjected to an underlayer treatment.
矽氧油就與輔助基板之被處理表面結合之處理之效率性之觀點而言，較佳為25℃下之動黏度為5000 mm2/s以下，更佳為500 mm2/s以下。動黏度之下限並無特別限制，但考慮到操作方面或成本，較佳為0.5 mm2/s以上。 The kinetic viscosity at 25 ° C is preferably 5000 mm 2 /s or less, more preferably 500 mm 2 /s or less, from the viewpoint of the efficiency of the treatment of bonding the surface of the auxiliary substrate to the treated substrate. The lower limit of the dynamic viscosity is not particularly limited, but is preferably 0.5 mm 2 /s or more in view of handling or cost.
於上述矽氧油中，就與樹脂層之剝離性良好之方面而言，較佳為純矽氧油，就賦予尤其高之剝離性之方面而言，較佳為二甲基聚矽氧烷。又，於必需具有剝離性且特別是耐熱性之情形時，較佳為苯基甲基聚矽氧烷或二苯基聚矽氧烷。 Among the above-mentioned oxime oils, a pure oxime oil is preferred in terms of good releasability from the resin layer, and dimethylpolyoxane is preferred in terms of imparting particularly high releasability. . Further, in the case where it is necessary to have releasability and particularly heat resistance, phenylmethylpolysiloxane or diphenylpolysiloxane is preferred.
氟系化合物之種類並無特別限定，可列舉：全氟烷基銨鹽、全氟烷基磺酸醯胺、全氟烷基磺酸鹽(例如，全氟烷基磺酸鈉)、全氟烷基鉀鹽、全氟烷基羧酸鹽、全氟烷基環氧乙烷加成物、全氟烷基三甲基銨鹽、全氟烷基胺基磺酸鹽、全氟烷基磷酸酯、全氟烷基化合物、全氟烷基甜菜鹼、全氟烷基鹵化物等。再者，作為含有氟烷基(CmF2m+1)之化合物，例如可列舉上述氟系化合物之例示化合物中之具有氟烷基之化合物。m之上限於剝離性能上並無特別限 制，但就操作上之安全性更優異之方面而言，m較佳為1~6之整數。 The type of the fluorine-based compound is not particularly limited, and examples thereof include a perfluoroalkylammonium salt, a perfluoroalkylsulfonium decylamine, a perfluoroalkylsulfonate (for example, sodium perfluoroalkylsulfonate), and perfluoro Alkyl potassium salt, perfluoroalkyl carboxylate, perfluoroalkyl ethylene oxide adduct, perfluoroalkyl trimethyl ammonium salt, perfluoroalkyl amine sulfonate, perfluoroalkyl phosphate Esters, perfluoroalkyl compounds, perfluoroalkyl betaines, perfluoroalkyl halides, and the like. In addition, examples of the compound containing a fluoroalkyl group (C m F 2m+1 ) include a compound having a fluoroalkyl group among the above-exemplified compounds of the above fluorine-based compound. The upper limit of m is not particularly limited in terms of peeling performance, but m is preferably an integer of 1 to 6 in terms of safety in terms of handling.
輔助基板之表面之處理方法根據所使用之剝離劑而適當選擇最佳方法。通常，藉由將剝離劑賦予(例如塗佈)至輔助基板之表面而進行處理。再者，該處理係至少對下述之樹脂層密接之表面進行即可，亦可對除此以外之表面實施表面處理。通常，輔助基板為具有第1主表面與第2主表面之板狀體，且較佳為至少對其一主表面進行該處理。 The method of treating the surface of the auxiliary substrate is appropriately selected depending on the release agent to be used. Typically, the treatment is carried out by imparting (e.g., coating) a release agent to the surface of the auxiliary substrate. Further, the treatment may be carried out at least on the surface in which the resin layer described below is in close contact with each other, and the surface may be subjected to surface treatment. Usually, the auxiliary substrate is a plate-like body having a first main surface and a second main surface, and it is preferable that at least one of the main surfaces is subjected to the treatment.
例如，於使用矽氧油之情形時，可列舉將矽氧油塗佈於輔助基板表面之方法。其中，較佳為於塗佈矽氧油後進行使矽氧油與輔助基板之被處理表面結合之處理。使矽氧油與被處理表面結合之處理係如將矽氧油之分子鏈切斷之處理，所切斷之斷片與被處理表面結合(以下，將該處理稱為矽氧油之低分子化)。 For example, in the case of using a helium oxide oil, a method of applying a helium oxide oil to the surface of an auxiliary substrate can be mentioned. Among them, it is preferred to carry out a treatment of bonding the helium oxide oil to the treated surface of the auxiliary substrate after applying the oxime oil. The treatment for binding the helium oxide oil to the surface to be treated is a treatment in which the molecular chain of the helium oxide oil is cut, and the cut piece is bonded to the surface to be treated (hereinafter, the treatment is referred to as low molecular weight of the helium oxide oil). ).
矽氧油之塗佈方法可為通常之方法。例如，可自噴塗法、擠壓式塗佈法、旋轉塗佈法、浸塗法、輥塗法、棒式塗佈法、絲網印刷法、凹版塗佈法等中根據矽氧油之種類或塗佈量等而適當選擇。 The coating method of the helium oxide oil can be a usual method. For example, it can be used in a spray coating method, a squeeze coating method, a spin coating method, a dip coating method, a roll coating method, a bar coating method, a screen printing method, a gravure coating method, or the like according to the type of the silicone oil. The coating amount or the like is appropriately selected.
作為塗佈液，較為理想的是使用於己烷、庚烷、二甲苯、異構石蠟等之溶劑中稀釋有矽氧油5質量%以下之溶液。若超過5質量%，則低分子化之處理時間過長。 As the coating liquid, a solution in which 5% by weight or less of the oxirane oil is diluted with a solvent such as hexane, heptane, xylene or isoparaffin is preferably used. If it exceeds 5% by mass, the treatment time for the low molecular weight is too long.
塗佈液所含之溶劑視需要利用加熱及/或減壓乾燥等方法去除。亦可藉由低分子化步驟中之加熱而去除。 The solvent contained in the coating liquid is removed by heating or/or drying under reduced pressure as needed. It can also be removed by heating in the low molecularization step.
矽氧油之塗佈量較佳為0.1~10 μg/cm2。若為0.1 μg/cm2以上，則剝離性更優異，就此方面而言較佳，若為10 μg/cm2以下，則塗佈液之塗佈性及低分子化處理性更優異，就此方面而言較佳。 The coating amount of the helium oxide oil is preferably from 0.1 to 10 μg/cm 2 . When it is 0.1 μg/cm 2 or more, the peeling property is more excellent, and in this respect, it is preferable, and when it is 10 μg/cm 2 or less, the coating property and the low molecular weight treatment property of the coating liquid are more excellent. It is better.
於使矽氧油低分子化之方法中，使用通常之方法，例如有藉由光分解或熱分解而將矽氧油之矽氧鍵切斷之方法。於光分解中利用自低壓水銀燈或氙弧燈等照射之紫外線，亦可併用大氣中之紫外線照射所產生之臭氧。熱分解可利用批次爐、輸送爐等進行，亦可利用電漿或電弧放電等。 In the method of lowering the molecular weight of the helium oxide oil, a usual method such as a method of cutting off the oxygen bond of the helium oxide oil by photolysis or thermal decomposition is used. In the photolysis, ultraviolet rays irradiated from a low-pressure mercury lamp or a xenon arc lamp or the like may be used, and ozone generated by ultraviolet rays in the atmosphere may be used in combination. The thermal decomposition can be carried out by using a batch furnace, a conveying furnace, or the like, or by using plasma or arc discharge.
若將矽氧油之矽氧鍵、或矽原子與碳原子之鍵切斷，則產生之活性點與被處理表面之羥基等活性基反應。結果為，被處理表面之甲基等疏水性官能基之密度變高，親水性之極性基之密度降低，結果對被處理表面賦予易剝離性。 When the helium oxygen bond of the helium oxide oil or the bond of the helium atom and the carbon atom is cleaved, the active site generated reacts with an active group such as a hydroxyl group of the surface to be treated. As a result, the density of the hydrophobic functional group such as a methyl group on the surface to be treated becomes high, and the density of the hydrophilic polar group is lowered, and as a result, the surface to be treated is easily peelable.
再者，進行表面處理之增強基板之表面較佳為足夠潔淨之面，較佳為剛清洗後之面。作為清洗方法，使用玻璃表面或樹脂表面之清洗中所使用之通常方法。 Further, the surface of the reinforcing substrate subjected to the surface treatment is preferably a sufficiently clean surface, preferably a surface just after cleaning. As the cleaning method, a usual method used for cleaning the glass surface or the resin surface is used.
較理想的是，未進行表面處理之表面由遮罩等保護膜預先保護。 Preferably, the surface which has not been surface-treated is previously protected by a protective film such as a mask.
又，於使用六甲基二矽氮烷等矽烷化劑之情形時，較佳為使矽烷化劑之蒸氣與輔助基板表面接觸。再者，亦可於加熱輔助基板之狀態下使其與矽烷化劑之蒸氣接觸。 Further, in the case of using a decylating agent such as hexamethyldiazepine, it is preferred to bring the vapor of the decylating agent into contact with the surface of the auxiliary substrate. Further, it may be brought into contact with the vapor of the alkylating agent while heating the auxiliary substrate.
矽烷化劑之蒸氣濃度較高者即接近飽和濃度者可縮短處理時間，故而較佳。 It is preferred that the higher the vapor concentration of the alkylating agent, that is, the near-saturated concentration, can shorten the processing time.
矽烷化劑與輔助基板之接觸時間只要不損害剝離性輔助基板之功能，則可縮短。 The contact time between the decylating agent and the auxiliary substrate can be shortened as long as the function of the releasable auxiliary substrate is not impaired.
於上述步驟中獲得之剝離性輔助基板之表面導入有源自矽氧油或矽烷化劑等之撥水性基(疏水性基)。 The water-repellent group (hydrophobic group) derived from a silicone oil or a decylating agent or the like is introduced into the surface of the releasable auxiliary substrate obtained in the above step.
第1積層步驟S104係如下之步驟：於上述步驟S102中獲得之剝離性輔助基板之表現易剝離性之表面上形成依序具有未硬化之硬化性樹脂組成物層、及載體基板之硬化前積層體(實施硬化處理前之積層體)。更具體而言，如圖2(B)所示，根據本步驟S104，形成於剝離性輔助基板10之表現剝離性之表面10a上積層有未硬化之硬化性樹脂組成物層12及載體基板14之硬化前積層體16。 The first lamination step S104 is a step of forming a layer of an uncured curable resin composition layer and a pre-hardening layer of the carrier substrate on the surface of the releasable auxiliary substrate obtained in the step S102. Body (layered body before hardening treatment). More specifically, as shown in FIG. 2(B), the uncured curable resin composition layer 12 and the carrier substrate 14 are laminated on the surface 10a of the releasable auxiliary substrate 10 which exhibits releasability. The laminated body 16 before hardening.
於該硬化前積層體中，未硬化之硬化性樹脂組成物層之一表面與剝離性輔助基板之表面未空出間隙地接觸。因此，於下述之硬化步驟S106中，若使該硬化性樹脂組成物層硬化，則可獲得轉印有剝離性輔助基板之平坦表面之樹脂層。 In the pre-hardened laminate, the surface of one of the uncured curable resin composition layers is in contact with the surface of the releasable auxiliary substrate without a gap. Therefore, in the curing step S106 described below, when the curable resin composition layer is cured, a resin layer on which the flat surface of the releasable auxiliary substrate is transferred can be obtained.
該步驟S104之獲得硬化前積層體之方法並無特別限制，但就使生產性及操作性等更優異之方面而言，可較佳列舉以下兩個方法。 The method of obtaining the laminated body before curing in the step S104 is not particularly limited, but the following two methods are preferable in terms of further improvement in productivity and workability.
(第1態樣)：於剝離性輔助基板之表現易剝離性之表面上塗佈硬化性樹脂組成物，形成未硬化之硬化性樹脂組成物層，進而於未硬化之硬化性樹脂組成物層上積層載體基板之方法。 (1st aspect): a curable resin composition is applied onto the surface of the releasable auxiliary substrate which exhibits easy peelability, and an uncured curable resin composition layer is formed, and the uncured curable resin composition layer is further formed. A method of stacking a carrier substrate.
(第2態樣)：於載體基板之表面上塗佈硬化性樹脂組成物，形成未硬化之硬化性樹脂組成物層，進而以剝離性輔助基板之表現易剝離性之表面與未硬化之硬化性樹脂組成物層接觸之方式，於未硬化之硬化性樹脂組成物層上積層剝離性輔助基板之方法。 (Second aspect): a curable resin composition is applied onto the surface of the carrier substrate to form an uncured curable resin composition layer, and the surface of the releasable auxiliary substrate exhibiting easy peelability and uncured hardening A method in which a releasable auxiliary substrate is laminated on an uncured curable resin composition layer in such a manner that the resin composition layer is in contact with each other.
其中，就使生產性及操作性等更優異之方面而言，較佳為第1態樣。 Among them, in terms of further improvement in productivity and workability, the first aspect is preferred.
以下，主要對第1態樣進行詳細敍述。首先，對本步驟中使用之材料(硬化性樹脂組成物、載體基板等)進行詳細敍述，其後對第1態樣之次序進行詳細敍述。 Hereinafter, the first aspect will be mainly described in detail. First, the materials (curable resin composition, carrier substrate, and the like) used in this step will be described in detail, and the order of the first aspect will be described in detail later.
本步驟S104中使用之硬化性樹脂組成物係可於下述之硬化步驟S106中形成樹脂層(密接性樹脂層)之組成物。 The curable resin composition used in the step S104 can form a composition of a resin layer (adhesive resin layer) in the curing step S106 described below.
作為硬化性樹脂組成物中所含之硬化性樹脂，只要具有其硬化膜對於對象物能夠可剝離地密接之密接性即可，可使用公知之硬化性樹脂(例如，熱硬化性組成物、光硬化性組成物等)。例如可列舉：硬化性丙烯酸系樹脂、硬化性胺基甲酸酯樹脂、硬化性矽氧等。亦可混合使用若干種硬化性樹脂。其中，較佳為硬化性矽氧。其原因在於，使硬化性矽氧硬化而獲得之矽氧樹脂之耐熱性或剝離性優異。又，其原因在於，若使用硬化性矽氧，則於使用玻璃基板作為載體基板時，因與載體基板表面之矽烷醇基之縮合反應而容易固定於載體基板。 The curable resin contained in the curable resin composition may have a tackifying property in which the cured film can be peelably adhered to the object, and a known curable resin (for example, a thermosetting composition or light) can be used. Sturdy composition, etc.). For example, a curable acrylic resin, a curable urethane resin, a curable oxime, etc. are mentioned. Several kinds of curable resins may also be used in combination. Among them, curable oxime is preferred. This is because the heat-sensitive resin or the peeling property obtained by curing the curable oxime is excellent. Moreover, when curing glass is used, when a glass substrate is used as a carrier substrate, it is easily fixed to a carrier substrate by a condensation reaction with a stanol group on the surface of the carrier substrate.
作為硬化性樹脂組成物，較佳為硬化性矽氧樹脂組成物 (尤其較佳為使用於剝離紙用之硬化性矽氧樹脂組成物)。使用該硬化性矽氧樹脂組成物而形成之樹脂層密接於玻璃基板表面，並且其自由表面具有優異之易剝離性，故而較佳。 As the curable resin composition, a curable epoxy resin composition is preferable. (especially preferred as a curable silicone resin composition for release paper). The resin layer formed using the curable epoxy resin composition is intimately bonded to the surface of the glass substrate, and its free surface has excellent peelability, which is preferable.
成為此種剝離紙用矽氧樹脂之硬化性矽氧根據其硬化機構而分類為縮合反應型矽氧、加成反應型矽氧、紫外線硬化型矽氧及電子束硬化型矽氧，可使用任一者。於該等中，較佳為加成反應型矽氧。其原因在於，硬化反應容易進行，形成樹脂層時剝離性之程度良好，且耐熱性亦較高。 The curable oxime which is used as the oxime resin for the release paper is classified into a condensation reaction type 矽 oxygen, an addition reaction type 矽 oxygen, an ultraviolet curing type 矽 oxygen, and an electron beam curing type 矽 oxygen according to the curing mechanism thereof, and any of them can be used. One. Among these, an addition reaction type helium oxygen is preferred. This is because the hardening reaction proceeds easily, and the degree of peeling property is good when the resin layer is formed, and the heat resistance is also high.
加成反應型矽氧樹脂組成物係含有主劑及交聯劑且於鉑系觸媒等觸媒之存在下硬化之硬化性組成物。加成反應型矽氧樹脂組成物之硬化係藉由加熱處理而促進。加成反應型矽氧樹脂組成物中之主劑較佳為具有鍵結於矽原子之烯基(乙烯基等)之有機聚矽氧烷(即，有機烯基聚矽氧烷，再者，較佳為直鏈狀)，烯基等成為交聯點。加成反應型矽氧樹脂組成物中之交聯劑較佳為具有鍵結於矽原子之氫原子(氫矽烷基)之有機聚矽氧烷(即，有機氫聚矽氧烷，再者，較佳為直鏈狀)，氫矽烷基等成為交聯點。 The addition reaction type oxime resin composition contains a main component and a crosslinking agent and is hardened by the presence of a catalyst such as a platinum-based catalyst. The hardening of the addition reaction type epoxy resin composition is promoted by heat treatment. The main component in the addition reaction type oxirane resin composition is preferably an organic polyoxyalkylene having an alkenyl group (vinyl group or the like) bonded to a ruthenium atom (i.e., an organic alkenyl polyoxane, further, It is preferably a linear chain), and an alkenyl group or the like becomes a crosslinking point. The crosslinking agent in the addition reaction type epoxy resin composition is preferably an organic polyoxyalkylene having a hydrogen atom (hydroalkylene group) bonded to a halogen atom (that is, an organic hydrogen polyoxyalkylene gas, and further, It is preferably a linear chain), and a hydroquinone group or the like becomes a crosslinking point.
加成反應型矽氧樹脂組成物係藉由主劑與交聯劑之交聯點進行加成反應而硬化。 The addition reaction type epoxy resin composition is hardened by an addition reaction of a crosslinking point of a main agent and a crosslinking agent.
再者，就源自交聯結構之耐熱性更優異之方面而言，較佳為有機氫聚矽氧烷之鍵結於矽原子之氫原子相對於有機烯基聚矽氧烷之烯基之莫耳比為0.5~2。 Further, in terms of the more excellent heat resistance derived from the crosslinked structure, it is preferred that the organic hydrogen polyoxyalkylene is bonded to the hydrogen atom of the halogen atom relative to the alkenyl group of the organic alkenyl polyoxyalkylene. The molar ratio is 0.5~2.
又，用以形成剝離紙等剝離層之硬化性矽氧樹脂組成物就形態而言有溶劑型、乳液型及無溶劑型，可使用任一型。於該等中，較佳為無溶劑型。其原因在於，生產性、安全性、環境特性方面優異。又，其原因在於，因不含有於形成下述之樹脂層時之硬化時即加熱硬化、紫外線硬化或電子束硬化時產生發泡之溶劑，故而氣泡難以殘留於樹脂層中。 Further, the curable silicone resin composition for forming a release layer such as release paper may be of a solvent type, an emulsion type or a solventless type, and any type may be used. Among these, a solventless type is preferred. The reason is that it is excellent in productivity, safety, and environmental characteristics. In addition, the solvent is not contained in the resin layer which is formed when the resin layer is formed, that is, when it is cured by heat, ultraviolet curing, or electron beam curing, so that bubbles do not easily remain in the resin layer.
又，作為用以形成剝離紙等剝離層之硬化性矽氧樹脂組成物，具體而言可列舉：作為市售之商品名或型號之KNS-320A、KS-847(均為Shin-Etsu Silicones公司製造)、TPR6700(Momentive Performance Materials Japan有限公司製造)、乙烯基矽氧「8500」(荒川化學工業公司製造)與甲基氫聚矽氧烷「12031」(荒川化學工業公司製造)之組合、乙烯基矽氧「11364」(荒川化學工業公司製造)與甲基氫聚矽氧烷「12031」(荒川化學工業公司製造)之組合、乙烯基矽氧「11365」(荒川化學工業公司製造)與甲基氫聚矽氧烷「12031」(荒川化學工業公司製造)之組合等。 In addition, as a curable silicone resin composition for forming a release layer such as a release paper, specifically, KNS-320A and KS-847 (both Shin-Etsu Silicones) are commercially available as trade names or models. Manufactured, TPR6700 (manufactured by Momentive Performance Materials Japan Co., Ltd.), vinyl oxime "8500" (manufactured by Arakawa Chemical Industries, Ltd.), and methyl hydrogen polyoxyalkylene "12031" (manufactured by Arakawa Chemical Industries, Ltd.), ethylene A combination of a group of "11364" (manufactured by Arakawa Chemical Industries Co., Ltd.) and a methyl hydrogen polyoxyalkylene "12031" (manufactured by Arakawa Chemical Industries Co., Ltd.), vinyl oxime "11365" (manufactured by Arakawa Chemical Industries Co., Ltd.) and A A combination of a base hydrogen polyoxane "12031" (manufactured by Arakawa Chemical Industries, Ltd.).
再者，KNS-320A、KS-847及TPR6700為預先含有主劑與交聯劑之硬化性矽氧樹脂組成物。 Further, KNS-320A, KS-847, and TPR6700 are hardenable oxime resin compositions containing a main component and a crosslinking agent in advance.
載體基板係如下之基板：固定(接著)有下述之硬化步驟S106中獲得之樹脂層，且支持並增強玻璃基板，於下述之構件形成步驟S112(製造電子裝置用構件之步驟)中於電子裝置用構件之製造時防止玻璃基板之變形、附損傷、破損 等。 The carrier substrate is a substrate in which the resin layer obtained in the hardening step S106 described below is fixed (followed), and the glass substrate is supported and reinforced, and the member forming step S112 (step of manufacturing the member for electronic device) is as follows. Prevention of deformation, damage, and damage of the glass substrate during manufacture of components for electronic devices Wait.
作為載體基板，例如可使用玻璃板、塑膠板、SUS板等金屬板等。載體基板於構件形成步驟S112伴隨有熱處理之情形時，較佳為由與玻璃基板之線膨脹係數之差較小之材料形成，更佳為由與玻璃基板相同之材料形成，載體基板較佳為玻璃板。尤其，載體基板較佳為包含與玻璃基板相同之玻璃材料之玻璃板。 As the carrier substrate, for example, a metal plate such as a glass plate, a plastic plate, or a SUS plate can be used. When the carrier substrate is subjected to heat treatment in the member forming step S112, it is preferably formed of a material having a small difference from the linear expansion coefficient of the glass substrate, more preferably formed of the same material as the glass substrate, and the carrier substrate is preferably glass plate. In particular, the carrier substrate is preferably a glass plate comprising the same glass material as the glass substrate.
載體基板之厚度可較下述之玻璃基板厚，亦可較其薄。較佳為根據玻璃基板之厚度、樹脂層之厚度、及下述之玻璃積層體之厚度而選擇載體基板之厚度。例如，現行之構件形成步驟係為了對厚度0.5 mm之構件形成用基板(無載體基板之積層而作為載體基板之單板進行操作之現行之情形)進行構件形成用處理(例如清洗、成膜、曝光現象、檢查等)而設計者，於玻璃基板之厚度與樹脂層之厚度之和為0.1 mm之情形時，將載體基板之厚度設為0.4 mm。載體基板之厚度於通常之情形時較佳為0.2~5.0 mm。 The thickness of the carrier substrate may be thicker than that of the glass substrate described below, or may be thinner. It is preferable to select the thickness of the carrier substrate in accordance with the thickness of the glass substrate, the thickness of the resin layer, and the thickness of the glass laminate described below. For example, the current member forming step is a member forming process (for example, cleaning, film formation, or the like) for a member for forming a member having a thickness of 0.5 mm (the current operation as a substrate of a carrier substrate without a laminate of a carrier substrate). In the case where the sum of the thickness of the glass substrate and the thickness of the resin layer is 0.1 mm, the thickness of the carrier substrate is set to 0.4 mm. The thickness of the carrier substrate is preferably 0.2 to 5.0 mm in the usual case.
於載體基板為玻璃板之情形時，就容易操作、難以破裂等理由而言，玻璃板之厚度較佳為0.08 mm以上。又，就期望如於電子裝置用構件形成後進行剝離時不破裂而適度地彎曲般之剛性之理由而言，玻璃板之厚度較佳為1.0 mm以下。 When the carrier substrate is a glass plate, the thickness of the glass plate is preferably 0.08 mm or more for reasons of easy handling and difficulty in cracking. In addition, it is desirable that the thickness of the glass plate is 1.0 mm or less for the reason that the member for the electronic device is formed to be rigid and not bent at the time of peeling and is appropriately bent.
玻璃基板與載體基板之於25~300℃下之平均線膨脹係數(以下，僅稱為「平均線膨脹係數」)之差較佳為500×10-7/℃以下，更佳為300×10-7/℃以下，進而較佳為200×10-7/℃以 下。若差過大，則有於構件形成步驟S112中之加熱冷卻時玻璃積層體嚴重翹曲之虞。於玻璃基板之材料與載體基板之材料相同之情形時，可抑制此種問題產生。 The difference between the average linear expansion coefficient (hereinafter simply referred to as "average linear expansion coefficient") of the glass substrate and the carrier substrate at 25 to 300 ° C is preferably 500 × 10 -7 / ° C or less, more preferably 300 × 10 -7 / ° C or less, further preferably 200 × 10 -7 / ° C or less. If the difference is too large, there is a possibility that the glass laminate is severely warped during heating and cooling in the member forming step S112. When the material of the glass substrate is the same as the material of the carrier substrate, such a problem can be suppressed.
於本步驟S104之第1態樣中，首先於剝離性輔助基板之表現易剝離性之表面上塗佈硬化性組成物。塗佈硬化性樹脂組成物之方法並無特別限制，可採用公知之方法。例如，作為塗佈方法，可列舉：噴塗法、擠壓式塗佈法、旋轉塗佈法、浸塗法、輥塗法、棒式塗佈法、絲網印刷法、凹版塗佈法等。可自此種方法中根據樹脂組成物之種類而適當選擇。 In the first aspect of the step S104, first, the curable composition is applied onto the surface of the releasable auxiliary substrate which exhibits easy peelability. The method of applying the curable resin composition is not particularly limited, and a known method can be employed. For example, examples of the coating method include a spray coating method, a extrusion coating method, a spin coating method, a dip coating method, a roll coating method, a bar coating method, a screen printing method, and a gravure coating method. From this method, it can be suitably selected according to the kind of resin composition.
又，硬化性樹脂組成物之塗佈量並無特別限制，就可獲得樹脂層之較佳厚度之方面而言，較佳為1~100 g/m2，更佳為5~20 g/m2。 Further, the coating amount of the curable resin composition is not particularly limited, and from the viewpoint of obtaining a preferable thickness of the resin layer, it is preferably from 1 to 100 g/m 2 , more preferably from 5 to 20 g/m. 2 .
再者，於硬化性樹脂組成物含有溶劑之情形時，視需要亦可進行硬化性樹脂未硬化之程度之加熱處理而使溶劑揮發。 In the case where the curable resin composition contains a solvent, if necessary, heat treatment may be performed to the extent that the curable resin is not cured, and the solvent is volatilized.
將硬化性樹脂組成物塗佈於剝離性輔助基板上而獲得之未硬化之硬化性樹脂組成物層之厚度並無特別限制，為了獲得下述之具有較佳厚度之樹脂層而適當調整。 The thickness of the uncured curable resin composition layer obtained by applying the curable resin composition to the releasable auxiliary substrate is not particularly limited, and is appropriately adjusted in order to obtain a resin layer having a preferable thickness as described below.
其次，於未硬化之硬化性樹脂組成物層上積層載體基板。 Next, a carrier substrate is laminated on the uncured curable resin composition layer.
將載體基板積層於未硬化之硬化性樹脂組成物層上之方法並無特別限制，可採用公知之方法。 The method of laminating the carrier substrate on the uncured curable resin composition layer is not particularly limited, and a known method can be employed.
例如，可列舉於常壓環境下於未硬化之硬化性樹脂組成物層之表面上堆疊載體基板之方法。再者，視需要亦可於在未硬化之硬化性樹脂組成物層之表面上堆疊載體基板後使用輥或壓機使載體基板壓接於未硬化之硬化性樹脂組成物層。藉由利用輥或壓機之壓接，而比較容易去除未硬化之硬化性樹脂組成物層與載體基板之層之間混入之氣泡，故而較佳。 For example, a method of stacking a carrier substrate on the surface of an uncured curable resin composition layer under a normal pressure environment can be exemplified. Further, if necessary, the carrier substrate may be stacked on the surface of the uncured curable resin composition layer, and then the carrier substrate may be pressure-bonded to the uncured curable resin composition layer using a roll or a press. It is preferable to use a pressure contact by a roll or a press to relatively easily remove bubbles which are mixed between the layer of the uncured curable resin composition and the layer of the carrier substrate.
若藉由真空層壓法或真空加壓法壓接，則進行氣泡之混入之抑制或良好之密接之確保，故而更佳。藉由於真空下壓接，而具有即便於殘留微小之氣泡之情形時亦不會因加熱而使氣泡成長，而難以導致產生載體基板之應變缺陷之優點。 When the pressure is bonded by a vacuum lamination method or a vacuum press method, it is more preferable to suppress the incorporation of air bubbles or to ensure good adhesion. By crimping under vacuum, there is an advantage that bubbles do not grow due to heating even when minute bubbles remain, and it is difficult to cause strain defects of the carrier substrate.
於積層載體基板時，較佳為對與未硬化之硬化性樹脂組成物層接觸之載體基板之表面進行充分清洗，而於清潔度較高之環境下積層。清潔度越高，則載體基板之平坦性越良好，故而較佳。 In the case of laminating a carrier substrate, it is preferred to sufficiently clean the surface of the carrier substrate which is in contact with the uncured curable resin composition layer, and to laminate the layer in an environment having a high degree of cleanliness. The higher the cleanliness, the better the flatness of the carrier substrate, which is preferable.
於藉由上述步驟而獲得之硬化前積層體中依序包含剝離性輔助基板之層、未硬化之硬化性樹脂組成物層、及載體基板之層。 The layer before the hardening obtained by the above steps sequentially includes a layer of the releasable auxiliary substrate, an uncured curable resin composition layer, and a layer of the carrier substrate.
再者，於上述中對第1態樣之次序進行了敍述，但亦可參照上述次序實施第2態樣。具體而言，針對塗佈硬化性樹脂組成物之態樣，自剝離性輔助基板變更為載體基板，藉由上述方法於載體基板上形成未硬化之硬化性樹脂組成物層。其後，取代載體基板而使用剝離性輔助基板，於未 硬化之硬化性樹脂組成物層上積層剝離性輔助基板，藉此可獲得硬化前積層體。 Furthermore, the order of the first aspect has been described above, but the second aspect can also be implemented with reference to the above-described order. Specifically, the uncured auxiliary resin substrate is formed on the carrier substrate by the above method, and the uncured curable resin composition layer is formed on the carrier substrate by the method described above. Thereafter, instead of the carrier substrate, a releasable auxiliary substrate is used. A layered releasable auxiliary substrate is laminated on the hardened curable resin composition layer, whereby a laminated body before curing can be obtained.
作為本步驟S104之較佳態樣(以下，亦適當稱為較佳態樣A)，較佳為如下之步驟：未硬化之硬化性樹脂組成物層之外形尺寸較載體基板之外形尺寸大，以於未硬化之硬化性樹脂組成物層中殘留未與載體基板接觸之周緣區域之方式，將載體基板積層於未硬化之硬化性樹脂組成物層上。換而言之，載體基板以於載體基板之外周露出未硬化之硬化性樹脂組成物層之方式積層於未硬化之硬化性樹脂組成物層上。 As a preferred aspect of the present step S104 (hereinafter, also referred to as a preferred aspect A as appropriate), it is preferred that the unhardened curable resin composition layer has a larger size than the carrier substrate. The carrier substrate is laminated on the uncured curable resin composition layer so that the peripheral region not in contact with the carrier substrate remains in the uncured curable resin composition layer. In other words, the carrier substrate is laminated on the uncured curable resin composition layer so that the uncured curable resin composition layer is exposed on the periphery of the carrier substrate.
更具體而言，如圖3(A)所示，以載體基板14未與未硬化之硬化性樹脂組成物層12之周緣區域12a接觸之方式，將載體基板14積層於未硬化之硬化性樹脂組成物層12上。於該態樣中，如圖3(A)及圖3(B)所示，未硬化之硬化性樹脂組成物層12之外形尺寸較載體基板14之外形尺寸大。再者，於圖3(B)中，未硬化之硬化性樹脂組成物層12與剝離性輔助基板10為相同之大小，但未硬化之硬化性樹脂組成物層12之外形尺寸亦可較剝離性輔助基板10之外形尺寸小。 More specifically, as shown in FIG. 3(A), the carrier substrate 14 is laminated on the uncured curable resin so that the carrier substrate 14 is not in contact with the peripheral region 12a of the uncured curable resin composition layer 12. On the composition layer 12. In this aspect, as shown in FIG. 3(A) and FIG. 3(B), the outer shape of the uncured curable resin composition layer 12 is larger than that of the carrier substrate 14. In addition, in FIG. 3(B), the uncured curable resin composition layer 12 and the releasable auxiliary substrate 10 have the same size, but the unhardened curable resin composition layer 12 may have a smaller outer shape. The size of the auxiliary substrate 10 is small.
通常，於未硬化之硬化性樹脂組成物層12之露出表面，因其表面張力之影響而容易於周緣部附近產生凸部(參照圖3(C))。於積層載體基板14時，若與此種凸部接觸，則有於載體基板14與未硬化之硬化性樹脂組成物層12之間產生 空隙36等之情形，結果有產生載體基板14與未硬化之硬化性樹脂組成物層12未接觸之區域之情形(參照圖3(D))。若存在此種區域，則有硬化步驟S106中獲得之樹脂層對於載體基板14之密接性降低之情形。又，亦有產生樹脂層之厚度不均之情形，亦可能成為於附樹脂層之載體基板之露出表面可形成表面凹凸之原因。 In general, the exposed surface of the uncured curable resin composition layer 12 is likely to have a convex portion in the vicinity of the peripheral portion due to the influence of the surface tension (see FIG. 3(C)). When the carrier substrate 14 is laminated, if it is in contact with such a convex portion, it is generated between the carrier substrate 14 and the uncured curable resin composition layer 12. In the case of the voids 36 and the like, there is a case where a region where the carrier substrate 14 and the uncured curable resin composition layer 12 are not in contact with each other is produced (see FIG. 3(D)). If such a region exists, there is a case where the adhesion of the resin layer obtained in the hardening step S106 to the carrier substrate 14 is lowered. Further, there is a case where the thickness of the resin layer is uneven, and the surface unevenness may be formed on the exposed surface of the carrier substrate with the resin layer.
因此，藉由使用具有較未硬化之硬化性樹脂組成物層12之外形尺寸小之外形尺寸之載體基板14，而可於不與該凸部接觸之情況下使載體基板14與未硬化之硬化性樹脂組成物層12接觸。結果為，進一步抑制產生載體基板14與未硬化之硬化性樹脂組成物層12未接觸之區域，而使樹脂層對於載體基板14之密接性更優異，並且亦進一步抑制產生附樹脂層之載體基板之露出表面之表面凹凸。 Therefore, by using the carrier substrate 14 having a shape smaller than that of the uncured curable resin composition layer 12, the carrier substrate 14 can be hardened without being hardened by contact with the convex portion. The resin composition layer 12 is in contact. As a result, the area where the carrier substrate 14 and the uncured curable resin composition layer 12 are not contacted is further suppressed, and the adhesion of the resin layer to the carrier substrate 14 is further improved, and the carrier substrate with the resin layer is further suppressed. The surface of the exposed surface is uneven.
於該態樣中，未硬化之硬化性樹脂組成物層之外形尺寸較載體基板之外形尺寸大。未硬化之硬化性樹脂組成物層之與載體基板接觸之區域之面積A與未硬化之硬化性樹脂組成物層之總面積B之比(面積A/總面積B)較佳為0.98以下，更佳為0.95以下。若為上述範圍內，則進一步抑制樹脂層之厚度不均之產生。下限並無特別限制，但就生產性等方面而言，較佳為0.75以上，更佳為0.80以上。 In this aspect, the shape of the uncured curable resin composition layer is larger than that of the carrier substrate. The ratio (area A / total area B) of the area A of the region of the uncured curable resin composition layer in contact with the carrier substrate to the total area B of the uncured curable resin composition layer is preferably 0.98 or less. Good is below 0.95. When it is in the above range, the occurrence of thickness unevenness of the resin layer is further suppressed. The lower limit is not particularly limited, but is preferably 0.75 or more, and more preferably 0.80 or more in terms of productivity and the like.
又，自載體基板之外周緣至未硬化之硬化性樹脂組成物層之外周緣為止之長度較佳為10 mm以上，更佳為15 mm以上。若為上述範圍內，則進一步抑制樹脂層之厚度不均之產生。上限並無特別限制，但就生產性等方面而言，較 佳為100 mm以下。 Moreover, the length from the outer periphery of the carrier substrate to the outer periphery of the uncured curable resin composition layer is preferably 10 mm or more, and more preferably 15 mm or more. When it is in the above range, the occurrence of thickness unevenness of the resin layer is further suppressed. The upper limit is not particularly limited, but in terms of productivity, etc. Good for less than 100 mm.
硬化步驟S106係如下之步驟：對上述第1積層步驟S104中獲得之硬化前積層體實施硬化處理，使硬化前積層體中之未硬化之硬化性樹脂組成物層硬化，而獲得具有樹脂層之硬化後積層體(實施硬化處理之積層體)。更具體而言，如圖2(C)所示，藉由實施該步驟，而使未硬化之硬化性樹脂組成物層12硬化從而獲得樹脂層18，而獲得依序具有剝離性輔助基板10之層、樹脂層18、及載體基板14之層之硬化後積層體20。 The hardening step S106 is a step of hardening the pre-hardened laminate obtained in the first lamination step S104, and hardening the uncured curable resin composition layer in the laminate before curing to obtain a resin layer. After hardening, the laminated body (the laminated body subjected to the hardening treatment). More specifically, as shown in FIG. 2(C), by performing this step, the uncured curable resin composition layer 12 is cured to obtain the resin layer 18, and the reproducible auxiliary substrate 10 is obtained in order. The laminated layer 20 of the layer, the resin layer 18, and the layer of the carrier substrate 14 is cured.
以下，對本步驟中實施之步驟之次序進行詳細敍述，其後對所獲得之積層體之構成進行詳細敍述。 Hereinafter, the procedure of the steps carried out in this step will be described in detail, and then the configuration of the obtained laminate will be described in detail.
本步驟中實施之硬化處理根據所使用之硬化性樹脂之種類而適當選擇最佳方法，但通常進行加熱處理或曝光處理。 The hardening treatment carried out in this step is appropriately selected depending on the type of the curable resin to be used, but usually, heat treatment or exposure treatment is performed.
於硬化性樹脂組成物層中所含之硬化性樹脂為熱硬化性之情形時，可藉由對未硬化之硬化性樹脂組成物層實施加熱處理而使該層硬化。加熱處理之條件根據所使用之熱硬化性樹脂之種類而適當選擇最佳條件。其中，就硬化性樹脂之硬化速度及所形成之樹脂層之耐熱性等方面而言，較佳為於150~300℃(較佳為180~250℃)下進行加熱處理10~120分鐘(較佳為30~60分鐘)。 When the curable resin contained in the curable resin composition layer is thermosetting, the layer can be cured by heat-treating the uncured curable resin composition layer. The conditions of the heat treatment are appropriately selected depending on the type of the thermosetting resin to be used. Among them, in terms of the curing speed of the curable resin and the heat resistance of the formed resin layer, it is preferably heated at 150 to 300 ° C (preferably 180 to 250 ° C) for 10 to 120 minutes (compared to Good for 30~60 minutes).
於硬化性樹脂組成物層中所含之硬化性樹脂為光硬化性 樹脂之情形時，可藉由對未硬化之硬化性樹脂組成物層實施曝光處理而使該層硬化。曝光處理時所照射之光之種類根據光硬化性樹脂之種類而適當選擇，例如可列舉：紫外光、可見光、紅外光等。又，就硬化性樹脂之硬化速度及所形成之樹脂層之耐光性等方面而言，曝光處理時之照射時間較佳為0.1~10分鐘(較佳為0.5~5分鐘)。 The curable resin contained in the curable resin composition layer is photocurable In the case of a resin, the layer can be cured by subjecting an uncured curable resin composition layer to an exposure treatment. The type of the light to be irradiated during the exposure treatment is appropriately selected depending on the type of the photocurable resin, and examples thereof include ultraviolet light, visible light, and infrared light. Further, the irradiation time during the exposure treatment is preferably from 0.1 to 10 minutes (preferably from 0.5 to 5 minutes) in terms of the curing speed of the curable resin and the light resistance of the formed resin layer.
其次，對硬化後積層體中之樹脂層進行詳細敍述。 Next, the resin layer in the laminated body after hardening will be described in detail.
樹脂層之外形尺寸並無特別限定，如上所述，於使用外形尺寸較未硬化之硬化性樹脂組成物層之外形尺寸小之載體基板之情形時，樹脂層之外形尺寸較載體基板之外形尺寸大。 The outer shape of the resin layer is not particularly limited. As described above, when a carrier substrate having a smaller outer shape than the uncured curable resin composition layer is used, the outer dimensions of the resin layer are smaller than those of the carrier substrate. Big.
樹脂層之厚度並無特別限定，但較佳為1~100 μm，更佳為5~30 μm，進而較佳為7~20 μm。其原因在於，若樹脂層之厚度為此種範圍，則樹脂層與玻璃基板之密接變得充分。又，其原因在於，即便有於樹脂層與玻璃基板之間夾雜有氣泡或異物之情形，亦可抑制玻璃基板之應變缺陷之產生。又，若樹脂層之厚度過厚，則於形成時需要時間及材料，故而不經濟。 The thickness of the resin layer is not particularly limited, but is preferably 1 to 100 μm, more preferably 5 to 30 μm, still more preferably 7 to 20 μm. This is because if the thickness of the resin layer is in such a range, the adhesion between the resin layer and the glass substrate becomes sufficient. Moreover, this is because the occurrence of strain defects in the glass substrate can be suppressed even when air bubbles or foreign matter are interposed between the resin layer and the glass substrate. Further, if the thickness of the resin layer is too thick, time and material are required at the time of formation, which is uneconomical.
再者，樹脂層亦可包含2層以上。於此情形時，「樹脂層之厚度」係指所有層之合計之厚度。 Further, the resin layer may contain two or more layers. In this case, the "thickness of the resin layer" means the total thickness of all the layers.
又，於樹脂層包含2層以上之情形時，形成各層之樹脂之種類亦可不同。 Further, when the resin layer contains two or more layers, the types of the resins forming the respective layers may be different.
樹脂層較佳為包含玻璃轉移點較室溫(25℃左右)低或不 具有玻璃轉移點之材料。其原因在於，可更容易地與玻璃基板剝離，同時與玻璃基板之密接亦變得充分。 The resin layer preferably contains a glass transition point lower or lower than room temperature (about 25 ° C) A material with a glass transfer point. This is because the glass substrate can be more easily peeled off and the adhesion to the glass substrate is also sufficient.
形成樹脂層之樹脂之種類並無特別限定，根據上述硬化性樹脂組成物所含之樹脂之種類而不同。例如可列舉：丙烯酸系樹脂、聚烯烴樹脂、聚胺基甲酸酯樹脂、或矽氧樹脂。其中，如上所述較佳為矽氧樹脂。 The type of the resin forming the resin layer is not particularly limited, and varies depending on the type of the resin contained in the curable resin composition. For example, an acrylic resin, a polyolefin resin, a polyurethane resin, or a oxime resin can be mentioned. Among them, as described above, a silicone resin is preferred.
再者，樹脂層視需要亦可含有非硬化性之有機聚矽氧烷，其含量具體而言為5質量%以下(0~5質量%)，較佳為可列舉0.01~1質量%。若非硬化性之有機聚矽氧烷含於樹脂層中，則下述之第1分離步驟S108中之剝離性輔助基板與樹脂層之界面之剝離進一步效率良好地進行。 In addition, the resin layer may contain a non-curable organic polysiloxane, and the content thereof is specifically 5% by mass or less (0 to 5% by mass), preferably 0.01 to 1% by mass. When the non-curable organic polysiloxane is contained in the resin layer, the peeling of the interface between the releasable auxiliary substrate and the resin layer in the first separation step S108 described below is further efficiently performed.
使樹脂層含有非硬化性之有機聚矽氧烷之方法並無特別限制，可列舉添加於上述硬化性樹脂組成物中之方法。 The method of containing the non-curable organic polyoxyalkylene in the resin layer is not particularly limited, and a method of adding the composition to the curable resin composition is exemplified.
再者，作為非硬化性之有機聚矽氧烷，可列舉不含有Si-H鍵之矽氧油，具體而言可列舉聚二甲基矽氧烷系或聚甲基苯基矽氧烷系矽氧油等。 In addition, examples of the non-hardenable organic polyoxane include an anthracene-oxygen oil which does not contain a Si—H bond, and specific examples thereof include a polydimethylsiloxane or a polymethylphenyloxane. Oxygenated oil, etc.
藉由上述硬化步驟而獲得之硬化後積層體依序具有剝離性輔助基板之層、樹脂層、及載體基板之層。 The hardened laminated body obtained by the above-described hardening step sequentially has a layer of a releasable auxiliary substrate, a resin layer, and a layer of a carrier substrate.
所獲得之硬化後積層體中，樹脂層固定(接著)於載體基板上，而且可剝離地密接於剝離性輔助基板。樹脂層係於下述之分離步驟S108中進行將剝離性輔助基板與附樹脂層之載體基板分離之操作之前防止附樹脂層之載體基板之位置偏移。 In the obtained post-hardened laminate, the resin layer is fixed (and subsequently) on the carrier substrate, and is detachably adhered to the releasable auxiliary substrate. The resin layer is prevented from shifting in position of the carrier substrate with the resin layer before the operation of separating the peeling auxiliary substrate from the carrier substrate with the resin layer in the separation step S108 described below.
剝離性輔助基板之與樹脂層接觸之表面可剝離地密接於樹脂層之表面。於本發明中，將該剝離性輔助基板之可容易剝離之性質稱為易剝離性。 The surface of the peelable auxiliary substrate that is in contact with the resin layer is peelably adhered to the surface of the resin layer. In the present invention, the property of the peelable auxiliary substrate which can be easily peeled off is referred to as easy peelability.
於本發明中，上述固定與(可剝離之)密接於剝離強度(即，剝離所需要之應力)方面存在差異，固定係指相對於密接而言剝離強度較大。具體而言，硬化後積層體中之樹脂層與載體基板之層之界面之剝離強度較剝離性輔助基板之層與樹脂層之界面之剝離強度大。 In the present invention, the above-mentioned fixation differs from the (peelable) in the peel strength (that is, the stress required for peeling), and the fixing means that the peel strength is large with respect to the adhesion. Specifically, the peeling strength at the interface between the resin layer in the laminated body and the layer of the carrier substrate after curing is higher than the peeling strength at the interface between the layer of the releasable auxiliary substrate and the resin layer.
又，可剝離之密接係指可剝離，同時亦指於不產生固定之面之剝離之情況下可剝離。具體而言係指於硬化後積層體中，於進行將剝離性輔助基板與載體基板分離之操作之情形時，於密接之面剝離，而於固定之面不剝離。因此，若進行將硬化後積層體分離成剝離性輔助基板與載體基板之操作，則硬化後積層體被分離成剝離性輔助基板與附樹脂層之載體基板之該2個。 Further, the peelable adhesive means peelable, and also refers to peeling off in the case where peeling of the fixed surface is not caused. Specifically, in the case where the peeling auxiliary substrate and the carrier substrate are separated from each other in the laminated body after curing, the surface is adhered to the surface to be adhered, and the surface to be fixed is not peeled off. Therefore, when the laminated body after the hardening is separated into the peelable auxiliary substrate and the carrier substrate, the laminated body is separated into two of the peeling auxiliary substrate and the carrier substrate with the resin layer.
如上所述，使未硬化之硬化性樹脂組成物層於與載體基板表面接觸之狀態下反應硬化，故而所形成之樹脂層較強地接著於載體基板表面。另一方面，未硬化之硬化性樹脂組成物層係於亦與剝離性輔助基板接觸之狀態下反應硬化，但由於剝離性輔助基板表面之易剝離性(非附著性)，故而所形成之樹脂層對於剝離性輔助基板以固體分子間之凡得瓦(Van Der Waals)力所致之結合力等較弱之結合力密接。 As described above, the uncured curable resin composition layer is reactively cured in a state of being in contact with the surface of the carrier substrate, so that the formed resin layer is strongly adhered to the surface of the carrier substrate. On the other hand, the uncured curable resin composition layer is reactively cured in a state of being in contact with the releasable auxiliary substrate, but the resin formed by the releasability of the surface of the auxiliary substrate is not easily adhered (non-adhesive). The layer is intimately bonded to the peeling auxiliary substrate by a weak bonding force such as a bonding force between solid molecules and a Van Der Waals force.
第1分離步驟S108係如下之步驟：自上述硬化步驟S106中獲得之硬化後積層體，將具有載體基板及與載體基板之表面接觸之樹脂層之附樹脂層之載體基板分離。更具體而言，如圖2(D)所示，根據該步驟S108，以剝離性輔助基板10與樹脂層18之界面為剝離面，自硬化後積層體20將剝離性輔助基板10分離、去除，而獲得具有固定於載體基板14上之樹脂層18之附樹脂層之載體基板22。 The first separation step S108 is a step of separating the carrier substrate having the resin substrate and the resin layer having the resin layer in contact with the surface of the carrier substrate by the hardened laminated body obtained in the above-described curing step S106. More specifically, as shown in FIG. 2(D), the interface between the releasable auxiliary substrate 10 and the resin layer 18 is a peeling surface, and the laminated body 20 is separated and removed from the peelable auxiliary substrate 10 after self-hardening. The carrier substrate 22 having the resin layer attached to the resin layer 18 on the carrier substrate 14 is obtained.
藉有實施本步驟，可獲得下述之第2積層步驟S110中積層玻璃基板之附樹脂層之載體基板。所獲得之附樹脂層之載體基板之樹脂層之表面(露出表面)的平坦性優異。因此，於下述之第2積層步驟S110中，可將玻璃基板無間隙地積層於樹脂層表面上。結果為，玻璃積層體中之玻璃基板之平坦性亦優異，而有助於提昇電子裝置之生產性。 By carrying out this step, the carrier substrate with the resin layer of the laminated glass substrate in the second lamination step S110 described below can be obtained. The surface (exposed surface) of the resin layer of the carrier substrate with the obtained resin layer is excellent in flatness. Therefore, in the second lamination step S110 described below, the glass substrate can be laminated on the surface of the resin layer without any gap. As a result, the flatness of the glass substrate in the glass laminate is also excellent, which contributes to the improvement of the productivity of the electronic device.
將剝離性輔助基板與樹脂層剝離之方法並無特別限定。具體而言，例如可於剝離性玻璃基板與樹脂層之界面***銳利之刀具狀者而賦予剝離之起點，然後噴出水與壓縮空氣之混合流體等進行剝離。較佳為以硬化後積層體中之剝離性輔助基板成為上側、載體基板成為下側之方式設置於壓盤上，將載體基板側真空吸附於壓盤上，於該狀態下首先使刀具進入至剝離性輔助基板與樹脂層之界面。而且，於其後利用複數個真空吸附墊吸附剝離性輔助基板側，自***有刀具之部位附近依序使真空吸附墊上升。如此一來，於剝離性輔助基板與樹脂層之界面形成空氣層，且該空氣層擴展於界面之整個面，而可容易將剝離性輔助基板 剝離。 The method of peeling the peelable auxiliary substrate from the resin layer is not particularly limited. Specifically, for example, a sharp cutter can be inserted into the interface between the peelable glass substrate and the resin layer to provide a starting point for peeling, and then a mixed fluid of water and compressed air can be discharged and peeled off. Preferably, the releasable auxiliary substrate in the laminated body is placed on the platen so that the peeling auxiliary substrate is on the upper side, and the carrier substrate is vacuum-adsorbed on the platen, and in this state, the tool is first introduced into the platen. The interface between the releasable auxiliary substrate and the resin layer. Then, the peeling auxiliary substrate side is adsorbed by a plurality of vacuum suction pads, and the vacuum suction pad is sequentially raised from the vicinity of the portion where the cutter is inserted. In this way, an air layer is formed at the interface between the releasable auxiliary substrate and the resin layer, and the air layer spreads over the entire surface of the interface, and the releasable auxiliary substrate can be easily removed. Stripped.
利用上述製造方法獲得之附樹脂層之載體基板中之樹脂層具有其露出表面對於對象物而可裝卸之密接性。其原因在於，於與剝離性輔助基板之剝離時，可抑制樹脂層之凝聚剝離等，可使樹脂層之剝離面維持具有充分密接性之狀態。 The resin layer in the carrier substrate with the resin layer obtained by the above production method has adhesiveness in which the exposed surface is detachable from the object. This is because the peeling of the resin layer can be suppressed, and the peeling surface of the resin layer can be maintained in a state in which sufficient adhesion is maintained.
再者，即便於在上述較佳態樣A中積層載體基板之情形時，亦可藉由實施本步驟S108，而自硬化後積層體將具有載體基板及與載體基板之表面接觸之樹脂層之附樹脂層之載體基板分離。即，自硬化後積層體將剝離性輔助基板與未與載體板接觸之樹脂層之周緣區域去除，而獲得具有載體基板及與載體基板之表面接觸之樹脂層之附樹脂層之載體基板。 Furthermore, even in the case where the carrier substrate is laminated in the above-described preferred embodiment A, the resin layer having the carrier substrate and the surface in contact with the surface of the carrier substrate can be self-hardened by performing the step S108. The carrier substrate with the resin layer is separated. That is, the self-cured laminated body removes the peripheral region of the releasable auxiliary substrate and the resin layer not in contact with the carrier sheet, and obtains a carrier substrate having a resin substrate and a resin layer in contact with the surface of the carrier substrate.
更具體而言，如圖4所示，根據該步驟S108，以剝離性輔助基板10與樹脂層18之界面為剝離面，自硬化後積層體20將剝離性輔助基板10及未與載體基板接觸之樹脂層18之周緣區域18a去除，而獲得具有固定於載體基板14上之樹脂層18之附樹脂層之載體基板22。 More specifically, as shown in FIG. 4, according to the step S108, the interface between the releasable auxiliary substrate 10 and the resin layer 18 is a peeling surface, and the self-hardening laminated body 20 contacts the peelable auxiliary substrate 10 and is not in contact with the carrier substrate. The peripheral region 18a of the resin layer 18 is removed, and the carrier substrate 22 having the resin layer attached to the resin layer 18 on the carrier substrate 14 is obtained.
再者，附樹脂層之載體基板中之載體基板與樹脂層之各者之外周緣之全周對齊。換而言之，載體基板與樹脂層具有相同之外形尺寸。 Further, the carrier substrate in the carrier substrate with the resin layer is aligned with the entire circumference of the outer periphery of each of the resin layers. In other words, the carrier substrate and the resin layer have the same outer dimensions.
自硬化後積層體獲得附樹脂層之載體基板之方法並無特別限制，可實施與上述相同之次序。例如，於載體基板之外周緣附近之剝離性輔助基板與樹脂層之界面***銳利之 刀具狀者而賦予剝離之起點，然後噴出水與壓縮空氣之混合流體等進行剝離。 The method of obtaining the carrier substrate with the resin layer from the laminate after self-hardening is not particularly limited, and the same procedure as described above can be carried out. For example, the interface between the releasable auxiliary substrate and the resin layer near the periphery of the carrier substrate is sharply inserted. The starting point of the peeling is given to the cutter, and then the mixed fluid of the water and the compressed air is discharged to peel off.
再者，若進行硬化後積層體中之樹脂層之未與載體基板接觸之周緣區域之去除，則有樹脂層之碎片靜電吸附於載體基板等而於下述之積層玻璃基板等時，該碎片進入至玻璃基板與樹脂層之間之虞。 In addition, when the peripheral layer region of the resin layer in the laminated body which is not in contact with the carrier substrate is removed, the fragments of the resin layer are electrostatically adsorbed on the carrier substrate or the like, and the laminated glass substrate or the like is used. Entering the crucible between the glass substrate and the resin layer.
因此，較佳為不進行該周緣區域之去除，而將附樹脂層之載體基板自硬化後積層體分離。 Therefore, it is preferable that the carrier substrate with the resin layer is self-hardened and the laminate is separated without performing the removal of the peripheral region.
再者，於不進行該周緣區域之去除而將附樹脂層之載體基板自硬化後積層體分離之情形時，有於附樹脂層之載體基板之樹脂層之周端部附近附著有包含毛邊狀之樹脂之碎片之情形。於此情形時，較佳為於不對樹脂層賦予損傷等損害之範圍內將碎片去除。更具體而言，較佳為於上述第1分離步驟S108、與下述之第2積層步驟S110之間設置使附樹脂層之載體基板中之載體基板與樹脂層之各者之外周緣之全周對齊之步驟。 In the case where the carrier substrate with the resin layer is separated from the cured laminate layer without removing the peripheral region, the resin layer of the carrier layer with the resin layer is attached to the vicinity of the peripheral end portion of the resin layer. The case of the fragments of resin. In this case, it is preferred to remove the chips within a range that does not impart damage such as damage to the resin layer. More specifically, it is preferable to provide the entire periphery of each of the carrier substrate and the resin layer in the carrier substrate with the resin layer between the first separation step S108 and the second laminate step S110 described below. Weekly alignment steps.
該步驟之方法並無特別限制，例如較佳為利用具有除電效果之高壓水之去除，較佳為去除後附著於樹脂層之水藉由噴出空氣等去除。 The method of this step is not particularly limited. For example, it is preferable to remove the high-pressure water having a destaticizing effect, and it is preferred that the water adhering to the resin layer after removal is removed by ejecting air or the like.
又，於自硬化後積層體將附樹脂層之載體基板去除時，藉由控制電離器之噴出或濕度，而可進一步抑制樹脂層之碎片靜電吸附於附樹脂層之載體基板。 Further, when the laminated body with the resin layer is removed from the laminated body after self-hardening, by controlling the discharge or humidity of the ionizer, it is possible to further suppress the electrostatic adsorption of the fragments of the resin layer on the carrier substrate with the resin layer.
第2積層步驟S110係於上述分離步驟S108中獲得之附樹 脂層之載體基板之樹脂層表面上可剝離地積層玻璃基板之步驟。更具體而言，如圖2(E)所示，根據本步驟S110，於附樹脂層之載體基板22之樹脂層18表面上積層玻璃基板24，而獲得玻璃積層體26。再者，所謂剝離可能，係指於對下述之附電子裝置用構件之積層體施加用以將附樹脂層之載體基板剝離之外力之情形時，不於載體基板與樹脂層之界面及樹脂層內部剝離而於玻璃基板與樹脂層之界面剝離之性質。 The second lamination step S110 is an attached tree obtained in the above separating step S108. The step of laminating the glass substrate on the surface of the resin layer of the carrier substrate of the lipid layer. More specifically, as shown in FIG. 2(E), according to this step S110, the glass substrate 24 is laminated on the surface of the resin layer 18 of the carrier substrate 22 to which the resin layer is attached, and the glass laminate 26 is obtained. In addition, the case where the peeling may be applied to the laminated body of the member for electronic device to be described below is to prevent the carrier substrate with the resin layer from being peeled off, and the interface between the carrier substrate and the resin layer and the resin are not required. The property in which the inside of the layer is peeled off and peeled off at the interface between the glass substrate and the resin layer.
如圖2(E)所示，玻璃積層體26係於載體基板14之層與玻璃基板24之層之間存在樹脂層18之積層體。樹脂層18之一面固定於載體基板14之層，並且另一面與玻璃基板24之第1主表面24a接觸，樹脂層18與玻璃基板24之界面可剝離地密接。換而言之，玻璃積層體中之樹脂層18與載體基板14之層之界面之剝離強度較玻璃基板24之層與樹脂層18之界面之剝離強度高。即，附樹脂層之載體基板22對玻璃基板24之第1主表面24a具備易剝離性。 As shown in FIG. 2(E), the glass laminate 26 is a laminate of the resin layer 18 between the layer of the carrier substrate 14 and the layer of the glass substrate 24. One surface of the resin layer 18 is fixed to the layer of the carrier substrate 14, and the other surface is in contact with the first main surface 24a of the glass substrate 24, and the interface between the resin layer 18 and the glass substrate 24 is detachably adhered. In other words, the peel strength at the interface between the resin layer 18 in the glass laminate and the layer of the carrier substrate 14 is higher than the peel strength at the interface between the layer of the glass substrate 24 and the resin layer 18. That is, the carrier substrate 22 with the resin layer is provided with easy peelability to the first main surface 24a of the glass substrate 24.
附樹脂層之載體基板22係於製造液晶面板等電子裝置用構件之構件形成步驟S112中增強玻璃基板24。 The carrier substrate 22 with a resin layer is a reinforcing glass substrate 24 in a member forming step S112 for manufacturing a member for an electronic device such as a liquid crystal panel.
該玻璃積層體26係於下述之構件形成步驟S112之前使用。即，該玻璃積層體26係在其玻璃基板24之第2主表面24b表面上形成液晶顯示裝置等電子裝置用構件之前使用。其後，附樹脂層之載體基板22之層於與玻璃基板24之層之界面被剝離，附樹脂層之載體基板22之層未成為構成電子裝置之部分。所分離之附樹脂層之載體基板22與新玻 璃基板24積層，作為玻璃積層體26而可再利用。 This glass laminate 26 is used before the member forming step S112 described below. In other words, the glass laminate 26 is used before forming a member for an electronic device such as a liquid crystal display device on the surface of the second main surface 24b of the glass substrate 24. Thereafter, the layer of the carrier substrate 22 with the resin layer is peeled off at the interface with the layer of the glass substrate 24, and the layer of the carrier substrate 22 with the resin layer is not part of the electronic device. The carrier substrate 22 with the resin layer separated and the new glass The glass substrate 24 is laminated and can be reused as the glass laminate 26.
以下，對本步驟中使用之玻璃基板進行詳細敍述，其後對該步驟S110之次序進行詳細敍述。 Hereinafter, the glass substrate used in this step will be described in detail, and the procedure of step S110 will be described in detail later.
玻璃基板之第1主表面與附樹脂層之載體基板中之樹脂層可剝離地密接，於與樹脂層密接之側之相反側之第2主表面設置有電子裝置用構件。 The first main surface of the glass substrate and the resin layer in the carrier substrate with the resin layer are detachably adhered to each other, and the electronic device member is provided on the second main surface on the side opposite to the side in contact with the resin layer.
玻璃基板之種類可為通常者，例如可列舉LCD、OLED等顯示裝置用玻璃基板等。玻璃基板之耐化學品性、耐透濕性優異，且熱收縮率較低。作為熱收縮率之指標，使用JIS R 3102(1995年改正)中所規定之線膨脹係數。 The type of the glass substrate may be a normal one, and examples thereof include a glass substrate for a display device such as an LCD or an OLED. The glass substrate is excellent in chemical resistance and moisture permeability, and has a low heat shrinkage rate. As an index of the heat shrinkage rate, the linear expansion coefficient prescribed in JIS R 3102 (1995 correction) was used.
若玻璃基板之線膨脹係數較大，則構件形成步驟S112大多伴隨有加熱處理，故而容易產生各種不良情形。例如於在玻璃基板上形成TFT(Thin Film Transistor，薄膜電晶體)之情形時，若將於加熱下形成TFT之玻璃基板冷卻，則有因玻璃基板之熱收縮而使TFT之位置偏移變得過大之虞。 When the linear expansion coefficient of the glass substrate is large, the member forming step S112 is often accompanied by heat treatment, so that various problems are likely to occur. For example, when a TFT (Thin Film Transistor) is formed on a glass substrate, if the glass substrate on which the TFT is formed under heating is cooled, the positional shift of the TFT is caused by thermal contraction of the glass substrate. Too big.
玻璃基板係使玻璃原料熔融並使熔融玻璃成形為板狀而獲得。此種成形方法可為通常者，例如可使用：浮式法、熔融法、流孔下引法、富可法、魯伯法等。又，尤其厚度較薄之玻璃基板係將暫時成形為板狀之玻璃加熱為可成形之溫度，並利用以延伸等手段將其拉長而變薄之方法(再曳引法)成形而獲得。 The glass substrate is obtained by melting a glass raw material and forming the molten glass into a plate shape. Such a molding method may be a normal one, and for example, a floating method, a melting method, a flow hole down method, a rich method, a Luber method, or the like may be used. Further, in particular, a glass substrate having a small thickness is obtained by heating a glass which has been temporarily formed into a plate shape to a temperature at which it can be formed, and forming it by a method of stretching and thinning by means of stretching or the like (re-drawing method).
玻璃基板之玻璃並無特別限定，但較佳為無鹼硼矽酸玻璃、硼矽酸玻璃、鈉鈣玻璃、高二氧化矽玻璃、其他以氧 化矽為主成分之氧化物系玻璃。作為氧化物系玻璃，較佳為藉由氧化物換算而得之氧化矽之含量為40~90質量%之玻璃。 The glass of the glass substrate is not particularly limited, but is preferably an alkali-free borosilicate glass, a borosilicate glass, a soda lime glass, a high cerium oxide glass, or other oxygen. An oxide-based glass containing ruthenium as a main component. The oxide-based glass is preferably a glass having a content of cerium oxide of 40 to 90% by mass in terms of oxide.
作為玻璃基板之玻璃，採用適於電子裝置用構件之種類或其製造步驟之玻璃。例如，液晶面板用玻璃基板因鹼金屬成分之溶出而容易對液晶產生影響，故而包含實質上不含有鹼金屬成分之玻璃(無鹼玻璃)(但是，通常包含鹼土金屬成分)。如此，玻璃基板之玻璃根據所應用之裝置之種類及其製造步驟而適當選擇。 As the glass of the glass substrate, a glass suitable for the type of the member for an electronic device or a manufacturing step thereof is used. For example, the glass substrate for a liquid crystal panel easily affects the liquid crystal by elution of an alkali metal component, and therefore contains glass (alkali-free glass) which does not substantially contain an alkali metal component (however, it usually contains an alkaline earth metal component). As such, the glass of the glass substrate is appropriately selected depending on the type of the apparatus to be applied and the manufacturing steps thereof.
玻璃基板之厚度並無特別限定，就玻璃基板之薄型化及/或輕量化之觀點而言，通常較佳為0.8 mm以下，更佳為0.3 mm以下，進而較佳為0.15 mm以下。於超過0.8 mm之情形時，無法滿足玻璃基板之薄型化及/或輕量化之要求。於0.3 mm以下之情形時，可對玻璃基板賦予良好之可撓性。於0.15 mm以下之情形時，可將玻璃基板捲取為輥狀。又，就容易製造玻璃基板、及容易操作玻璃基板等理由而言，玻璃基板之厚度較佳為0.03 mm以上。 The thickness of the glass substrate is not particularly limited, but is preferably 0.8 mm or less, more preferably 0.3 mm or less, and still more preferably 0.15 mm or less from the viewpoint of thickness reduction and/or weight reduction of the glass substrate. When it exceeds 0.8 mm, the requirements for thinning and/or weight reduction of the glass substrate cannot be satisfied. When it is 0.3 mm or less, good flexibility can be imparted to the glass substrate. When the thickness is 0.15 mm or less, the glass substrate can be wound into a roll shape. Moreover, the thickness of the glass substrate is preferably 0.03 mm or more for the reason that the glass substrate is easily produced and the glass substrate is easily handled.
再者，玻璃基板亦可包含2層以上，於此情形時，形成各層之材料可為同種材料，亦可為不同種材料。又，於此情形時，「玻璃基板之厚度」係指所有層之合計之厚度。 Further, the glass substrate may include two or more layers. In this case, the materials forming the layers may be the same material or different materials. In this case, the "thickness of the glass substrate" means the total thickness of all the layers.
又，亦可於玻璃基板之一表面積層其他層狀材料。例如，為了增強玻璃基板之強度，可積層樹脂層等，亦可積層例如氧化銦錫或氧化矽等無機物薄膜層。再者，玻璃基板之與矽氧樹脂層密接之側之面即第1主表面與輔助基板 同樣地，亦可預先具有易剝離性。 Further, other layered materials may be layered on one surface area of the glass substrate. For example, in order to enhance the strength of the glass substrate, a resin layer or the like may be laminated, and an inorganic thin film layer such as indium tin oxide or antimony oxide may be laminated. Further, the first main surface and the auxiliary substrate which are the surfaces of the glass substrate which are in close contact with the silicone resin layer Similarly, it is also possible to have easy peelability in advance.
於本步驟S110中，準備上述附樹脂層之載體基板與玻璃基板，以上述附樹脂層之載體基板之樹脂層表面與玻璃基板之第1主表面為積層面將兩者密接積層。樹脂層之積層面具有易剝離性，藉由通常之疊合與加壓，而能夠使其等可容易剝離地密接。 In the step S110, the carrier substrate and the glass substrate with the resin layer are prepared, and the surface of the resin layer of the carrier substrate with the resin layer and the first main surface of the glass substrate are layered together. The layer of the resin layer has easy peelability, and can be easily adhered and adhered by lamination and pressurization.
具體而言，例如可列舉於常壓環境下於樹脂層之易剝離性之表面堆疊玻璃基板後，使用輥或壓機將樹脂層與玻璃基板壓接之方法。藉由利用輥或壓機壓接而使樹脂層與玻璃基板更密接，故而較佳。又，藉由利用輥或壓機之壓接，而比較容易去除樹脂層與玻璃基板之間所混入之氣泡，故而較佳。 Specifically, for example, a method in which a glass substrate is stacked on a surface of a resin layer which is easily peelable under a normal pressure environment, and a resin layer and a glass substrate are pressure-bonded using a roll or a press. It is preferable to bond the resin layer and the glass substrate more closely by pressure bonding using a roll or a press. Further, it is preferable to use a pressure contact between a roll or a press to remove bubbles which are mixed between the resin layer and the glass substrate.
若藉由真空層壓法或真空加壓法壓接，則進行氣泡之混入之抑制或良好之密接之確保，故而更佳。藉由於真空下壓接，而具有即便於殘留微小之氣泡之情形時亦不會因加熱而使氣泡成長，而難以導致產生玻璃基板之應變缺陷之優點。 When the pressure is bonded by a vacuum lamination method or a vacuum press method, it is more preferable to suppress the incorporation of air bubbles or to ensure good adhesion. By crimping under vacuum, there is an advantage that bubbles do not grow due to heating even when minute bubbles remain, and it is difficult to cause strain defects of the glass substrate.
於使樹脂層可剝離地密接於玻璃基板之第1主表面時，較佳為對樹脂層及玻璃基板之相互接觸之側之面進行充分清洗，而於清潔度較高之環境下積層。 When the resin layer is peelably adhered to the first main surface of the glass substrate, it is preferred to sufficiently clean the surface on the side where the resin layer and the glass substrate are in contact with each other, and to laminate the layer in an environment having a high degree of cleanliness.
構件形成步驟S112係如下之步驟：於上述第2積層步驟S110中獲得之玻璃積層體中之玻璃基板之表面上形成電子 裝置用構件。 The member forming step S112 is a step of forming an electron on the surface of the glass substrate in the glass laminate obtained in the second layering step S110. Component for the device.
更具體而言，如圖2(F)所示，根據本步驟S112，於玻璃基板24之第2主表面24b上形成電子裝置用構件28，而獲得附電子裝置用構件之積層體30。 More specifically, as shown in FIG. 2(F), the electronic device member 28 is formed on the second main surface 24b of the glass substrate 24 in accordance with this step S112, and the laminated body 30 for the electronic device is obtained.
首先，對本步驟中使用之電子裝置用構件進行詳細敍述，其後對步驟之次序進行詳細敍述。 First, the components for electronic devices used in this step will be described in detail, and the order of the steps will be described in detail later.
電子裝置用構件係形成於玻璃積層體中之玻璃基板之第2主表面上而構成電子裝置之至少一部分之構件。更具體而言，作為電子裝置用構件，可列舉：顯示裝置用面板、太陽電池、薄膜二次電池、或於表面形成有電路之半導體晶圓等電子零件等中所使用之構件。作為顯示裝置用面板，包含有機EL面板、電漿顯示器面板、場發射面板等。 The member for an electronic device is formed on the second main surface of the glass substrate in the glass laminate to constitute at least a part of the electronic device. More specifically, the member for the electronic device may be a member for use in a panel for a display device, a solar cell, a thin film secondary battery, or an electronic component such as a semiconductor wafer on which a circuit is formed. The panel for a display device includes an organic EL panel, a plasma display panel, a field emission panel, and the like.
例如，作為太陽電池用構件，就矽型而言，可列舉：正極之氧化錫等透明電極、由p層/i層/n層表示之矽層、及負極之金屬等，除此以外，可列舉與化合物型、色素增感型、量子點型等對應之各種構件等。 For example, the member for a solar cell may be a transparent electrode such as tin oxide of a positive electrode, a tantalum layer represented by a p layer/i layer/n layer, and a metal of a negative electrode, and the like. Various members corresponding to a compound type, a dye-sensitized type, a quantum dot type, and the like are listed.
又，作為薄膜二次電池用構件，就鋰離子型而言，可列舉：正極及負極之金屬或金屬氧化物等透明電極、電解質層之鋰化合物、集電層之金屬、作為密封層之樹脂等，除此以外，可列舉與鎳氫型、聚合物型、陶瓷電解質型等對應之各種構件等。 In addition, examples of the lithium ion type include a transparent electrode such as a metal or a metal oxide of a positive electrode and a negative electrode, a lithium compound of an electrolyte layer, a metal of a collector layer, and a resin as a sealing layer. Other than this, various members corresponding to a nickel-hydrogen type, a polymer type, a ceramic electrolyte type, etc. are mentioned.
又，作為電子零件用構件，就CCD(Charge Coupled Device，電荷耦合器件)或CMOS(Complementary Metal Oxide Semiconductor，互補金屬氧化物半導體)而言，可列舉：導電部之金屬、絕緣部之氧化矽或氮化矽等，除此以外，可列舉與壓力感測器、加速感測器等各種感測器或硬性印刷基板、軟性印刷基板、硬性軟性印刷基板等對應之各種構件等。 Further, as a member for an electronic component, a CCD (Charge Coupled Device) or a CMOS (Complementary Metal) Examples of the Oxide semiconductor and the complementary metal oxide semiconductor include a metal of a conductive portion, ruthenium oxide or tantalum nitride of an insulating portion, and the like, and various feelings such as a pressure sensor and an acceleration sensor are exemplified. Various components such as a measuring device, a rigid printed circuit board, a flexible printed circuit board, and a rigid flexible printed circuit board.
上述附電子裝置用構件之積層體之製造方法並無特別限定，根據電子裝置用構件之構成構件之種類而利用先前公知之方法，於積層體之玻璃基板之第2主表面上形成電子裝置用構件。 The method for producing the laminated body of the member for an electronic device is not particularly limited, and the electronic device is formed on the second main surface of the glass substrate of the laminated body by a conventionally known method depending on the type of the constituent member of the electronic device member. member.
再者，電子裝置用構件亦可並非為最終形成於玻璃基板之第2主表面之構件之全部(以下稱為「全部構件」)，而為全部構件之一部分(以下稱為「部分構件」)。亦可將自樹脂層剝離之附部分構件之玻璃基板於之後之步驟中設為附全部構件之玻璃基板(與下述之電子裝置相當)。 In addition, the member for the electronic device may not be the entire member (hereinafter referred to as "all members") which is finally formed on the second main surface of the glass substrate, and is a part of all the members (hereinafter referred to as "partial member"). . The glass substrate to which the member is peeled off from the resin layer may be a glass substrate (corresponding to an electronic device described below) in which all the members are attached in the subsequent step.
又，亦可於自樹脂層剝離之附全部構件之玻璃基板之剝離面(第1主表面)形成另一電子裝置用構件。又，亦可組裝附全部構件之積層體，並於其後自附全部構件之積層體將附樹脂層之載體基板剝離而製造電子裝置。進而，亦可使用2片附全部構件之積層體組裝電子裝置，並於其後自附全部構件之積層體將2片附樹脂層之載體基板剝離而製造電子裝置。 Further, another member for an electronic device may be formed on the peeling surface (first main surface) of the glass substrate from which all the members are peeled off from the resin layer. Moreover, the laminated body with all the members may be assembled, and the carrier substrate with the resin layer may be peeled off from the laminated body of all the members thereafter to manufacture an electronic device. Further, the electronic device can be assembled by using two laminated bodies with all the members, and the carrier substrate of the two resin-attached layers can be peeled off from the laminated body of all the members thereafter to manufacture an electronic device.
例如，若取製造OLED之情形為例，則為了於玻璃積層體之玻璃基板之與樹脂層側相反之側之表面上(與玻璃基 板之第2主表面相當)形成有機EL結構體，而進行形成透明電極，進而於形成有透明電極之面上蒸鍍電洞注入層、電洞輸送層、發光層、電子輸送層等，形成背面電極，使用密封板密封等各種層形成或處理。作為此種層形成或處理，具體而言，例如可列舉：成膜處理、蒸鍍處理、密封板之接著處理等。 For example, in the case of manufacturing an OLED, for the surface of the glass substrate of the glass laminate opposite to the resin layer side (with glass base) An organic EL structure is formed on the second main surface of the plate, and a transparent electrode is formed, and a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and the like are formed on the surface on which the transparent electrode is formed. The back electrode is formed or treated using various layers such as a sealing plate seal. Specific examples of the formation or treatment of such a layer include a film formation treatment, a vapor deposition treatment, and a subsequent treatment of a sealing plate.
又，例如，TFT-LCD之製造方法具有如下等各步驟：TFT形成步驟，其係於玻璃積層體之玻璃基板之第2主表面上，使用抗蝕液圖案形成於藉由CVD(Chemical Vapor Deposition，化學氣相沈積)法及濺鍍法等通常之成膜法而形成之金屬膜及金屬氧化膜等而形成薄膜電晶體(TFT)；CF(Color Filter，彩色濾光片)形成步驟，其係於另一玻璃積層體之玻璃基板之第2主表面上，將抗蝕液用於圖案形成而形成彩色濾光片(CF)；以及貼合步驟，其係將TFT形成步驟中獲得之附TFT之積層體與CF形成步驟中獲得之附CF之積層體以TFT與CF相對向之方式介隔片材積層。 Further, for example, the TFT-LCD manufacturing method has the steps of forming a TFT which is formed on the second main surface of the glass substrate of the glass laminate, and is formed by CVD (Chemical Vapor Deposition) using a resist pattern. a metal film and a metal oxide film formed by a usual film formation method such as a chemical vapor deposition method and a sputtering method to form a thin film transistor (TFT); and a CF (Color Filter) forming step. Attaching to the second main surface of the glass substrate of another glass laminate, using a resist liquid for pattern formation to form a color filter (CF); and a bonding step of attaching the TFT formation step The laminate of the TFT and the CF-attached laminate obtained in the CF forming step are interposed in a sheet laminate in such a manner that the TFT and the CF face each other.
於TFT形成步驟或CF形成步驟中，使用眾所周知之光微影技術或蝕刻技術等於玻璃基板之第2主表面形成TFT或CF。此時，作為圖案形成用之塗佈液，使用抗蝕液。 In the TFT forming step or the CF forming step, a TFT or CF is formed equal to the second major surface of the glass substrate using well-known photolithography or etching techniques. At this time, a resist liquid was used as the coating liquid for pattern formation.
再者，於形成TFT或CF前，視需要亦可清洗玻璃基板之第2主表面。作為清洗方法，可使用眾所周知之乾式清洗或濕式清洗。 Further, before forming the TFT or CF, the second main surface of the glass substrate may be cleaned as needed. As the cleaning method, a well-known dry cleaning or wet cleaning can be used.
於貼合步驟中，例如於附TFT之積層體與附CF之積層體之間注入液晶材而積層。作為注入液晶材之方法，例如有 減壓注入法、滴下注入法。 In the bonding step, for example, a liquid crystal material is injected between the laminated body with the TFT and the laminated body with the CF to laminate. As a method of injecting a liquid crystal material, for example, Decompression injection method, dropping injection method.
第2分離步驟S114係如下之步驟：自上述構件形成步驟S112中獲得之附電子裝置用構件之積層體將附樹脂層之載體基板去除，而獲得具有玻璃基板與電子裝置用構件之電子裝置。更具體而言，如圖2(G)所示，根據該步驟S114，自附電子裝置用構件之積層體將附樹脂層之載體基板22分離、去除，而獲得包含玻璃基板24與電子裝置用構件28之電子裝置32。 The second separation step S114 is a step of removing the carrier substrate with the resin layer from the laminate of the member for electronic device obtained in the above-described member forming step S112, and obtaining an electronic device having a glass substrate and a member for an electronic device. More specifically, as shown in FIG. 2(G), the carrier substrate 22 with the resin layer is separated and removed by the laminated body of the member for electronic device according to the step S114, and the glass substrate 24 and the electronic device are obtained. The electronic device 32 of the member 28.
於剝離時之玻璃基板上之電子裝置用構件為所需之全部構成構件之形成之一部分之情形時，亦可於分離後於玻璃基板上形成剩餘之構成構件。 In the case where the member for an electronic device on the glass substrate at the time of peeling is a part of all the constituent members required, the remaining constituent members may be formed on the glass substrate after the separation.
以下，對本步驟S114之次序進行詳細敍述。 Hereinafter, the procedure of this step S114 will be described in detail.
將玻璃基板之第1主表面與樹脂層之剝離性表面剝離之方法並無特別限定。例如可實施於上述第1分離步驟中所說明之次序。 The method of peeling the first main surface of the glass substrate from the peeling surface of the resin layer is not particularly limited. For example, it can be carried out in the order described in the above first separation step.
例如，可於玻璃基板與樹脂層之界面***銳利之刀具狀者而賦予剝離之起點，然後噴出水與壓縮空氣之混合流體等進行剝離。 For example, a sharp cutter can be inserted into the interface between the glass substrate and the resin layer to provide a starting point for peeling, and then a mixed fluid of water and compressed air can be discharged to peel off.
又，於自附電子裝置用構件之積層體去除附樹脂層之載體基板時，藉由控制電離器之噴出或濕度，而可抑制可能對電子裝置產生影響之靜電。或者，亦可於電子裝置組入消耗靜電之電路，或組入犧牲電路而自端子部至積層體外取得導通。 Further, when the carrier substrate with the resin layer is removed from the laminate of the member for electronic device, by controlling the discharge or humidity of the ionizer, it is possible to suppress static electricity which may affect the electronic device. Alternatively, the electronic device may be incorporated into a circuit that consumes static electricity, or a sacrificial circuit may be incorporated to obtain conduction from the terminal portion to the outside of the laminate.
藉由上述步驟而獲得之電子裝置較佳用於行動電話或PDA(Personal Digital Assistant，個人數位助理)之類之移動末端所使用之小型顯示裝置之製造。顯示裝置主要為LCD或OLED，作為LCD，包含TN(Twisted Nematic，扭轉向列)型、STN(Super Twisted Nematic，超扭轉向列)型、FE(Field Effect，場效應)型、TFT型、MIM(Metal Insulator Metal，金屬-絕緣體-金屬)型、IPS(In-Plane Switching，橫向電場驅動)型、VA(Vertical Alignment，垂直配向)型等。基本上於被動驅動型、主動驅動型中之任一型顯示裝置之情形時均可應用。 The electronic device obtained by the above steps is preferably used for the manufacture of a small display device used in a mobile terminal such as a mobile phone or a PDA (Personal Digital Assistant). The display device is mainly LCD or OLED, and as LCD, including TN (Twisted Nematic) type, STN (Super Twisted Nematic) type, FE (Field Effect) type, TFT type, MIM (Metal Insulator Metal, metal-insulator-metal) type, IPS (In-Plane Switching) type, VA (Vertical Alignment) type, etc. It can be applied basically in the case of any of the passive driving type and the active driving type.
圖5係表示本發明之電子裝置之製造方法之另一實施形態之製造步驟的流程圖。如圖5所示，電子裝置之製造方法包括：輔助基板準備步驟S102、第1積層步驟S104、消泡步驟S116、硬化步驟S106、第1分離步驟S108、第2積層步驟S110、構件形成步驟S112、及第2分離步驟S114。 Fig. 5 is a flow chart showing the manufacturing steps of another embodiment of the method of manufacturing the electronic device of the present invention. As shown in FIG. 5, the manufacturing method of the electronic device includes an auxiliary substrate preparing step S102, a first laminating step S104, a defoaming step S116, a hardening step S106, a first separating step S108, a second laminating step S110, and a member forming step S112. And the second separation step S114.
圖5所示之各步驟除包括消泡步驟S116之該點外，為與圖1所示之步驟相同之次序，於相同之步驟中標附相同之參照符號，並省略其說明，主要對消泡步驟S116進行說明。 The steps shown in FIG. 5 are the same as the steps shown in FIG. 1 except for the point of the defoaming step S116, and the same reference numerals are attached to the same steps, and the description thereof is omitted, mainly for defoaming. Step S116 will be described.
消泡步驟S116係於上述第1積層步驟S104後且硬化步驟S106前進行未硬化之硬化性樹脂組成物層之消泡處理之步驟。藉由設置該步驟S116，而自未硬化之硬化性樹脂組成 物層去除氣泡或易揮發成分，而使所獲得之樹脂層與玻璃基板之密接性進一步強化。 The defoaming step S116 is a step of performing a defoaming treatment of the uncured curable resin composition layer after the first lamination step S104 and before the curing step S106. It is composed of an uncured curable resin by providing this step S116. The layer removes bubbles or volatile components, and the adhesion between the obtained resin layer and the glass substrate is further enhanced.
消泡步驟之處理方法根據所使用之未硬化之硬化性樹脂組成物層之材料而適當選擇最佳方法，例如可列舉：使用真空泵之減壓消泡、或使用離心力之離心分離消泡、使用超音波消泡裝置之超音波消泡等。就生產性等方面而言，較佳為於減壓下進行消泡處理之減壓消泡，作為其條件，較佳為於1000 Pa以下(較佳為100 Pa以下)實施消泡處理1~30分鐘左右。 The treatment method of the defoaming step is appropriately selected depending on the material of the uncured curable resin composition layer to be used, and examples thereof include vacuum defoaming using a vacuum pump or centrifugal defoaming using centrifugal force. Ultrasonic defoaming of the ultrasonic defoaming device. In terms of productivity, etc., it is preferred to carry out defoaming and defoaming under decompression under reduced pressure, and as a condition, it is preferable to carry out defoaming treatment at 1000 Pa or less (preferably 100 Pa or less). 30 minutes or so.
以下，藉由實施例等對本發明進行具體說明，但本發明並不由該等例限定。 Hereinafter, the invention will be specifically described by way of examples, but the invention is not limited by the examples.
於以下之實施例1及4~6、比較例1~2中，作為玻璃基板，使用包含無鹼硼矽酸玻璃之玻璃板(縱720 mm，橫600 mm，板厚0.3 mm，線膨脹係數38×10-7/℃，旭硝子公司製造，商品名「AN100」)。又，作為輔助基板，相同地使用包含無鹼硼矽酸玻璃之玻璃板(縱760 mm，橫640 mm，板厚0.7 mm，線膨脹係數38×10-7/℃，旭硝子公司製造，商品名「AN100」)，作為載體基板，相同地使用包含無鹼硼矽酸玻璃之玻璃板(縱720 mm，橫600 mm，板厚0.4 mm，線膨脹係數38×10-7/℃，旭硝子公司製造，商品名「AN100」)。 In Examples 1 and 4 to 6 and Comparative Examples 1 and 2 below, a glass plate containing an alkali-free borosilicate glass (length 720 mm, width 600 mm, thickness 0.3 mm, linear expansion coefficient) was used as the glass substrate. 38×10 -7 /°C, manufactured by Asahi Glass Co., Ltd., trade name “AN100”). Further, as the auxiliary substrate, a glass plate containing an alkali-free borosilicate glass (length 760 mm, width 640 mm, plate thickness 0.7 mm, linear expansion coefficient 38×10 -7 /° C., manufactured by Asahi Glass Co., Ltd., trade name) was used in the same manner. "AN100"), as a carrier substrate, a glass plate containing an alkali-free borosilicate glass (720 mm in length, 600 mm in width, 0.4 mm in plate thickness, and linear expansion coefficient of 38 × 10 -7 /°C, manufactured by Asahi Glass Co., Ltd.) was used in the same manner. , the product name "AN100").
對輔助基板進行純水清洗、UV(Ultraviolet，紫外線)清 洗，而使表面潔淨化。其後，於輔助基板之單面即第2主表面實施遮罩，然後於相反側之第1主表面噴塗矽氧油含量為1質量%之庚烷溶液並進行乾燥。矽氧油係使用二甲基聚矽氧烷(Dow Corning Toray公司製造，SH200，動黏度190~210 mm2/s)。繼而，為了實現矽氧油之低分子化，進行350℃下之加熱處理5分鐘，而獲得剝離性輔助基板。 The auxiliary substrate is cleaned by pure water and UV (Ultraviolet) to clean the surface. Thereafter, a mask is applied to the second main surface of the auxiliary substrate, and then a heptane solution having a parafoaming oil content of 1% by mass is sprayed on the first main surface on the opposite side and dried. The oxime oil was dimethylpolysiloxane (manufactured by Dow Corning Toray, SH200, dynamic viscosity: 190 to 210 mm 2 /s). Then, in order to achieve the low molecular weight of the helium oxide oil, heat treatment at 350 ° C was carried out for 5 minutes to obtain a peeling auxiliary substrate.
其後，使用接觸角計(Kurusu公司製造，DROP SHAPE ANALYSIS SYSTEM DSA 10Mk2)測定剝離性輔助基板之第1主表面之水接觸角，結果為100°。 Then, the water contact angle of the first main surface of the releasable auxiliary substrate was measured using a contact angle meter (DROP SHAPE ANALYSIS SYSTEM DSA 10Mk2, manufactured by Kurusu Co., Ltd.), and it was 100°.
又，使用原子力顯微鏡(Pacific Nanotechnology公司製造，Nano Scope IIIa；Scan Rate 1.0 Hz，Sample Lines 256，Off-line Modify Flatten order-2，Planefit order-2)測定剝離性輔助基板之第1主表面之平均表面粗糙度(Ra)，結果為0.5 nm。平均表面粗糙度(Ra)係根據測定範圍10 μm見方之測定值而算出。 Further, the average of the first main surface of the releasable auxiliary substrate was measured using an atomic force microscope (manufactured by Pacific Nanotechnology, Nano Scope IIIa; Scan Rate 1.0 Hz, Sample Lines 256, Off-line Modify Flatten order-2, Planefit order-2). Surface roughness (Ra), the result is 0.5 nm. The average surface roughness (Ra) was calculated from the measurement value of the measurement range of 10 μm square.
其次，於剝離性輔助基板之第1主表面上，將於兩末端具有乙烯基之直鏈狀有機烯基聚矽氧烷(乙烯基矽氧，荒川化學工業公司製造，8500)、於分子內具有氫矽烷基之甲基氫聚矽氧烷(荒川化學工業公司製造，12031)、及鉑系觸媒(荒川化學工業公司製造，CAT12070)之混合液利用絲網印刷機塗敷成縱750 mm、橫630 mm之大小且長方形，將含有未硬化之硬化性矽氧之層設置於剝離性輔助基板上(塗敷量35 g/m2)。此處，直鏈狀有機烯基聚矽氧烷、與甲基氫聚矽氧烷之混合比係以乙烯基與氫矽烷基之莫耳比成 為1：1之方式調節。又，鉑系觸媒相對於直鏈狀有機烯基聚矽氧烷與甲基氫聚矽氧烷之合計100質量份設為5質量份。 Next, on the first main surface of the releasable auxiliary substrate, a linear organic alkenyl polyoxyalkylene (vinyl anthracene, manufactured by Arakawa Chemical Industries, Ltd., 8500) having a vinyl group at both ends is used in the molecule. A mixture of methylhydrogenpolyoxyalkylene (manufactured by Arakawa Chemical Industries, Ltd., 12031) and a platinum-based catalyst (manufactured by Arakawa Chemical Industries, Ltd., CAT12070) having a hydroquinone group was applied by a screen printer to a length of 750 mm. A rectangular shape having a size of 630 mm and a layer containing uncured hardenable oxygen was placed on the releasable auxiliary substrate (coating amount: 35 g/m 2 ). Here, the mixing ratio of the linear organic alkenyl polyoxyalkylene to the methylhydrogenpolysiloxane is adjusted so that the molar ratio of the vinyl group to the hydrofluorenyl group is 1:1. In addition, the platinum-based catalyst is used in an amount of 5 parts by mass based on 100 parts by mass of the total of the linear organoalkenyl polysiloxane and the methylhydrogenpolyoxyalkylene.
其次，對板厚0.4 mm之載體基板之與矽氧樹脂接觸之側之面(第1主表面)進行純水清洗，其後進行UV清洗而使其潔淨化。其後，將載體基板之第1主表面、與含有未硬化之硬化性矽氧之層於室溫下利用真空壓機貼合，並於30 Pa下靜置5分鐘，進行含有未硬化之硬化性矽氧之層之消泡處理，而獲得硬化前積層體A0。此時，以於含有未硬化之硬化性矽氧之層中殘留未與載體基板接觸之周緣區域之方式，將載體基板積層於含有未硬化之硬化性矽氧之層上。再者，自載體基板之外周緣至未硬化之硬化性樹脂組成物層之外周緣之長度為約15 mm以上。又，未硬化之硬化性樹脂組成物層之與載體基板接觸之區域之面積A與未硬化之硬化性樹脂組成物層之總面積B之比(面積A/總面積B)為0.91。 Next, the surface (the first main surface) of the carrier substrate having a thickness of 0.4 mm on the side in contact with the epoxy resin was subjected to pure water washing, and then UV-cleaned to be cleaned. Thereafter, the first main surface of the carrier substrate and the layer containing the uncured curable cerium oxide were bonded together at room temperature by a vacuum press, and allowed to stand at 30 Pa for 5 minutes to carry out uncured hardening. The defoaming treatment of the layer of the bismuth oxygen is carried out to obtain the layered body A0 before hardening. At this time, the carrier substrate is laminated on the layer containing the uncured curable cerium oxide so that the peripheral region which is not in contact with the carrier substrate remains in the layer containing the uncured curable cerium oxide. Further, the length from the outer periphery of the carrier substrate to the outer periphery of the uncured curable resin composition layer is about 15 mm or more. Moreover, the ratio (area A / total area B) of the area A of the region of the uncured curable resin composition layer in contact with the carrier substrate and the total area B of the uncured curable resin composition layer (area A / total area B) was 0.91.
其次，將硬化前積層體A0於250℃下於大氣中加熱硬化30分鐘，而獲得含有厚度10 μm之硬化之矽氧樹脂層之硬化後積層體A1。 Next, the pre-hardened layered body A0 was heat-hardened in the atmosphere at 250 ° C for 30 minutes to obtain a post-hardened layered product A1 containing a hardened epoxy resin layer having a thickness of 10 μm.
繼而，將硬化後積層體A1之載體基板之與矽氧樹脂之接觸面之相反之面(第2主表面)真空吸附於壓盤後，於載體基板之4個部位之角部中之1個部位之角部的剝離性輔助基板與矽氧樹脂層之界面***厚度0.1 mm之不鏽鋼製刀具，對剝離性輔助基板與矽氧樹脂層之界面賦予剝離之起點。其 次，於利用24個真空吸附墊吸附剝離性輔助基板表面後，自靠近***刀具之角部之吸附墊依序使其上升。此處，刀具之***係一面自電離器(KEYENCE公司製造)將除電性流體噴出至該界面一面進行。其次，一面自電離器繼續向形成之空隙噴出除電性流體一面提拉真空吸附墊。其結果為，可將剝離性輔助基板剝離，而於壓盤上僅殘留於第1主表面形成有矽氧樹脂層之載體基板(附樹脂層之載體基板)。此時，於剝離性輔助基板之與矽氧樹脂層密接之面(第1主表面)上未目視觀察到矽氧樹脂之附著。再者，根據該結果確認，樹脂層與載體基板之層之界面之剝離強度較剝離性輔助基板之層與樹脂層之界面之剝離強度大。 Then, the surface (the second main surface) opposite to the contact surface of the carrier substrate of the laminated body A1 after hardening is vacuum-adsorbed to the platen, and then one of the corner portions of the four portions of the carrier substrate. A stainless steel cutter having a thickness of 0.1 mm was inserted into the interface between the peeling auxiliary substrate and the silicone resin layer at the corner portion of the portion, and the starting point of the peeling was applied to the interface between the peeling auxiliary substrate and the silicone resin layer. its Then, after the surface of the peeling auxiliary substrate was adsorbed by 24 vacuum suction pads, the adsorption pad from the corner portion of the insertion tool was sequentially raised. Here, the inserting of the cutter is performed while ejecting the static eliminating fluid to the interface from the ionizer (manufactured by KEYENCE Corporation). Next, the vacuum adsorption pad is pulled while the ionizer continues to eject the neutralizing fluid into the formed void. As a result, the peelable auxiliary substrate can be peeled off, and only the carrier substrate (the carrier substrate with the resin layer) on which the epoxy resin layer is formed on the first main surface can be left on the platen. At this time, adhesion of the epoxy resin was not visually observed on the surface (first main surface) of the peeling auxiliary substrate which was in contact with the silicone resin layer. Further, from the results, it was confirmed that the peel strength at the interface between the resin layer and the layer of the carrier substrate was larger than the peel strength at the interface between the layer of the releasable auxiliary substrate and the resin layer.
其次，藉由高壓水，將附樹脂層之載體基板之周端之毛邊狀之矽氧樹脂除去，並藉由噴出空氣而除去附著之水。其次，對附樹脂層之載體基板之矽氧樹脂層上，與矽氧樹脂接觸之側之面(第1主面)進行清洗，其後進行UV清洗，獲得經清潔化之玻璃基板A3，使該玻璃基板A3於室溫下藉由真空壓機貼合，獲得玻璃積層體A2。 Next, the rim resin of the peripheral end of the carrier substrate with the resin layer is removed by high-pressure water, and the adhered water is removed by ejecting air. Next, the surface of the tantalum resin layer of the carrier substrate with the resin layer on the side in contact with the epoxy resin (the first main surface) is cleaned, and then UV-cleaned to obtain a cleaned glass substrate A3. The glass substrate A3 was bonded by a vacuum press at room temperature to obtain a glass laminate A2.
進而，於玻璃積層體A2上，藉由與上述硬化後積層體A1相同之次序，剝離附樹脂層之載體基板。此時，於玻璃基板A3之與矽氧樹脂密接之面(第1主面)上，未目視觀察到矽氧樹脂之附著。再者，根據該結果，確認樹脂層與載體基板之層之界面的剝離強度較玻璃基板與樹脂層之界面之剝離強度大。 Further, on the glass laminate A2, the carrier substrate with the resin layer is peeled off in the same order as the above-mentioned cured laminate A1. At this time, the adhesion of the epoxy resin was not visually observed on the surface (first main surface) of the glass substrate A3 which was in close contact with the silicone resin. Further, from the results, it was confirmed that the peel strength at the interface between the resin layer and the layer of the carrier substrate was larger than the peel strength at the interface between the glass substrate and the resin layer.
作為輔助基板、載體基板及玻璃基板，使用包含鈉鈣玻璃之玻璃板，除此以外藉由與實施例1相同之方法獲得玻璃積層體B2。再者，使用之輔助基板、載體基板及玻璃基板之大小、與實施例1中使用之輔助基板、載體基板及玻璃基板之大小相同。 A glass laminate B2 was obtained in the same manner as in Example 1 except that a glass plate containing soda lime glass was used as the auxiliary substrate, the carrier substrate, and the glass substrate. Further, the size of the auxiliary substrate, the carrier substrate, and the glass substrate to be used is the same as that of the auxiliary substrate, the carrier substrate, and the glass substrate used in the first embodiment.
其次，藉由與實施例1相同之方法，自玻璃積層體B2將附樹脂層之載體基板剝離，而獲得鈉鈣玻璃基板B3。此時，於鈉鈣玻璃基板B3之與矽氧樹脂層密接之面(第1主表面)上未目視觀察到矽氧樹脂之附著。 Then, the carrier substrate with the resin layer was peeled off from the glass laminate B2 by the same method as in Example 1 to obtain a soda lime glass substrate B3. At this time, adhesion of the epoxy resin was not visually observed on the surface (first main surface) of the soda lime glass substrate B3 which was in contact with the silicone resin layer.
作為輔助基板、載體基板及玻璃基板，使用包含經化學強化之玻璃板之玻璃板，除此以外藉由與實施例1相同之方法獲得玻璃積層體C2。再者，使用之輔助基板、載體基板及玻璃基板之大小、與實施例1中使用之輔助基板、載體基板及玻璃基板之大小相同。 A glass laminate C2 was obtained in the same manner as in Example 1 except that a glass plate including a chemically strengthened glass plate was used as the auxiliary substrate, the carrier substrate, and the glass substrate. Further, the size of the auxiliary substrate, the carrier substrate, and the glass substrate to be used is the same as that of the auxiliary substrate, the carrier substrate, and the glass substrate used in the first embodiment.
其次，藉由與實施例1相同之方法，自玻璃積層體C2將附樹脂層之載體基板剝離，而獲得經化學強化之玻璃基板C3。此時，於經化學強化之玻璃基板C3之與矽氧樹脂層密接之面(第1主表面)上未目視觀察到矽氧樹脂之附著。 Next, the carrier substrate with the resin layer was peeled off from the glass laminate C2 by the same method as in Example 1 to obtain a chemically strengthened glass substrate C3. At this time, adhesion of the epoxy resin was not visually observed on the surface (first main surface) of the chemically strengthened glass substrate C3 which was in close contact with the epoxy resin layer.
對玻璃基板之第1主表面上即與矽氧樹脂接觸之側之面進行純水清洗，其後進行UV清洗而使其潔淨化，進而於潔淨化之面藉由磁控濺鍍法(加熱溫度300℃，成膜壓力5 mTorr，功率密度0.5 W/cm2)形成厚度10 nm之氧化銦錫之 薄膜(片材電阻300 Ω/□)，其後於氧化銦錫之薄膜上噴塗矽氧油含量為1質量%之庚烷溶液並進行乾燥，除此以外藉由與實施例1相同之方法獲得玻璃積層體D2。 The surface of the first main surface of the glass substrate, that is, the side in contact with the epoxy resin, is cleaned with pure water, then cleaned by UV cleaning, and further cleaned by magnetron sputtering (heating) Temperature 300 ° C, film formation pressure 5 mTorr, power density 0.5 W / cm 2 ) film of indium tin oxide having a thickness of 10 nm (sheet resistance 300 Ω / □), and then sprayed on the film of indium tin oxide The glass laminate D2 was obtained by the same method as in Example 1 except that the oil content was 1% by mass of a heptane solution and dried.
其次，藉由與實施例1相同之方法，自玻璃積層體D2將附樹脂層之載體基板剝離，而獲得於第1主表面形成有氧化銦錫之薄膜層之玻璃基板D3。此時，於玻璃基板D3之與矽氧樹脂層密接之面(第1主表面)上未目視觀察到矽氧樹脂之附著。 Then, the carrier substrate with the resin layer was peeled off from the glass laminate D2 by the same method as in Example 1, and a glass substrate D3 having a thin film layer of indium tin oxide formed on the first main surface was obtained. At this time, adhesion of the epoxy resin was not visually observed on the surface (first main surface) of the glass substrate D3 which was in close contact with the epoxy resin layer.
於本例中，使用實施例1中獲得玻璃積層體A2製作OLED。 In this example, an OLED was produced using the glass laminate A2 obtained in Example 1.
更具體而言，於玻璃積層體A2之玻璃基板之第2主表面上，藉由濺鍍法使鉬成膜，且藉由使用光微影法之蝕刻形成閘極電極。其次，藉由電漿CVD法於設置有閘極電極之玻璃基板之第2主表面側進而使氮化矽、本徵非晶矽、n型非晶矽依序成膜，繼而藉由濺鍍法使鉬成膜，且藉由使用光微影法之蝕刻形成閘極絕緣膜、半導體元件部及源極/汲極電極。其次，藉由電漿CVD法於玻璃基板之第2主表面側進而使氮化矽成膜而形成鈍化層後，藉由濺鍍法使氧化銦錫成膜，且藉由使用光微影法之蝕刻形成像素電極。 More specifically, on the second main surface of the glass substrate of the glass laminate A2, molybdenum is formed by sputtering, and a gate electrode is formed by etching using photolithography. Next, a tantalum nitride, an intrinsic amorphous germanium, and an n-type amorphous germanium are sequentially formed on the second main surface side of the glass substrate provided with the gate electrode by a plasma CVD method, followed by sputtering. The molybdenum is formed into a film, and the gate insulating film, the semiconductor element portion, and the source/drain electrodes are formed by etching using photolithography. Next, a passivation layer is formed by forming a passivation layer on the second main surface side of the glass substrate by a plasma CVD method, and then indium tin oxide is formed by sputtering, and by using a photolithography method. The etching forms a pixel electrode.
繼而，於玻璃基板之第2主表面側，進而藉由蒸鍍法使作為正孔注入層之4,4',4"-三(3-甲基苯基苯基胺基)三苯基胺、作為正孔輸送層之雙[(N-萘基)-N-苯基]聯苯胺、於作為發光層之8-羥基喹啉鋁錯合物(Alq3)中混合有40體積%之 2,6-雙[4-[N-(4-甲氧基苯基)-N-苯基]胺基苯乙烯基]萘-1,5-二甲腈(BSN-BCN)者、及作為電子輸送層之Alq3依序成膜。其次，於玻璃基板之第2主表面側藉由濺鍍法使鋁成膜，且藉由使用光微影法之蝕刻形成對向電極。其次，於形成有對向電極之玻璃基板之第2主表面上，介隔紫外線硬化型之接著層貼合另一片玻璃基板並進行密封。藉由上述次序而獲得之於玻璃基板上具有有機EL結構體之玻璃積層體A2與附載體基板之顯示裝置用面板(面板A2)(附電子裝置用構件之積層體)相當。 Then, on the second main surface side of the glass substrate, 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine as a positive hole injection layer was further deposited by vapor deposition. Bis[(N-naphthyl)-N-phenyl]benzidine as a positive transport layer, and 40% by volume of 8 hydroxyquinoline aluminum complex (Alq 3 ) as a light-emitting layer , 6-bis[4-[N-(4-methoxyphenyl)-N-phenyl]aminostyryl]naphthalene-1,5-dicarbonitrile (BSN-BCN), and as an electron The Alq 3 of the transport layer is sequentially formed into a film. Next, aluminum is formed on the second main surface side of the glass substrate by sputtering, and the counter electrode is formed by etching using photolithography. Secondly, formation is performed. On the second main surface of the glass substrate having the counter electrode, another glass substrate is bonded and sealed by an ultraviolet curing type bonding layer, and the glass having the organic EL structure on the glass substrate obtained by the above procedure is obtained. The laminate A2 corresponds to a panel for a display device (panel A2) (a laminate of members for an electronic device) with a carrier substrate.
繼而，將面板A2之密封體側真空吸附於壓盤，於面板A2之角部之玻璃基板與矽氧樹脂層之界面***厚度0.1 mm之不鏽鋼製刀具，自面板A2將附樹脂層之載體基板分離，而獲得OLED面板(與電子裝置相當，以下稱為面板A)。於製作之面板A連接IC(Integrated Circuit，積體電路)驅動器並使其驅動，結果於驅動區域內未確認到顯示不均。 Then, the sealing body side of the panel A2 is vacuum-adsorbed to the pressure plate, and a stainless steel cutter having a thickness of 0.1 mm is inserted into the interface between the glass substrate and the silicone resin layer at the corner of the panel A2, and the carrier substrate with the resin layer is attached from the panel A2. Separation is performed to obtain an OLED panel (corresponding to an electronic device, hereinafter referred to as panel A). When an IC (Integrated Circuit) driver was connected to the panel A to be fabricated and driven, no display unevenness was confirmed in the drive region.
於本例中，使用實施例1中獲得之玻璃積層體A2製作LCD。 In this example, an LCD was produced using the glass laminate A2 obtained in Example 1.
準備2片玻璃積層體A2，首先，於一片玻璃積層體A2之玻璃基板之第2主表面上，藉由濺鍍法使鉬成膜，且藉由使用光微影法之蝕刻形成閘極電極。其次，藉由電漿CVD法於設置有閘極電極之玻璃基板之第2主表面側進而使氮化矽、本徵非晶矽、n型非晶矽依序成膜，繼而藉由濺鍍法使鉬成膜，且藉由使用光微影法之蝕刻形成閘極絕緣 膜、半導體元件部及源極/汲極電極。其次，藉由電漿CVD法於玻璃基板之第2主表面側進而使氮化矽成膜而形成鈍化層後，藉由濺鍍法使氧化銦錫成膜，且藉由使用光微影法之蝕刻形成像素電極。其次，於形成有像素電極之玻璃基板之第2主表面上，藉由輥塗法塗佈聚醯亞胺樹脂液，藉由熱硬化而形成配向層，且進行摩擦。將所獲得之玻璃積層體A2稱為玻璃積層體A2-1。 Two sheets of the glass laminate A2 are prepared. First, on the second main surface of the glass substrate of the glass laminate A2, molybdenum is formed by sputtering, and the gate electrode is formed by etching using photolithography. . Next, a tantalum nitride, an intrinsic amorphous germanium, and an n-type amorphous germanium are sequentially formed on the second main surface side of the glass substrate provided with the gate electrode by a plasma CVD method, followed by sputtering. Method for forming molybdenum and forming gate insulation by etching using photolithography Film, semiconductor device portion, and source/drain electrodes. Next, a passivation layer is formed by forming a passivation layer on the second main surface side of the glass substrate by a plasma CVD method, and then indium tin oxide is formed by sputtering, and by using a photolithography method. The etching forms a pixel electrode. Next, on the second main surface of the glass substrate on which the pixel electrode was formed, the polyimide film solution was applied by a roll coating method to form an alignment layer by thermal curing, and rubbing was performed. The obtained glass laminate A2 is referred to as a glass laminate A2-1.
其次，於另一片玻璃積層體A2之玻璃基板之第2主表面上，藉由濺鍍法使鉻成膜，且藉由使用光微影法之蝕刻形成遮光層。其次，於設置有遮光層之玻璃基板之第2主表面側進而藉由擠壓式塗佈法塗佈彩色光阻，藉由光微影法及熱硬化形成彩色濾光片層。其次，於玻璃基板之第2主表面側進而藉由濺鍍法使氧化銦錫成膜，形成對向電極。其次，於設置有對向電極之玻璃基板之第2主表面上，藉由擠壓式塗佈法塗佈紫外線硬化樹脂液，藉由光微影法及熱硬化形成柱狀間隔件。其次，於形成有柱狀間隔件之玻璃基板之第2主表面上，藉由輥塗法塗佈聚醯亞胺樹脂液，藉由熱硬化而形成配向層，且進行摩擦。其次，於玻璃基板之第2主表面側，藉由分配法將片材用樹脂液描畫成框狀，於框內藉由分配法滴下液晶後，使用上述玻璃積層體A2-1將2片玻璃積層體A2之玻璃基板之第2主表面側彼此貼合，藉由紫外線硬化及熱硬化而獲得具有LCD面板之積層體。將此處之具有LCD面板之積層體於以下稱為附面板之積層體B2。 Next, on the second main surface of the glass substrate of the other glass laminate A2, chromium is formed by sputtering, and a light shielding layer is formed by etching using photolithography. Next, a color filter is applied by a press coating method on the second main surface side of the glass substrate provided with the light shielding layer, and a color filter layer is formed by photolithography and thermal curing. Next, indium tin oxide was formed on the second main surface side of the glass substrate by sputtering to form a counter electrode. Next, on the second main surface of the glass substrate provided with the counter electrode, the ultraviolet curable resin liquid was applied by a squeeze coating method, and a columnar spacer was formed by photolithography and thermal hardening. Next, on the second main surface of the glass substrate on which the columnar spacers are formed, the polyimide film solution is applied by a roll coating method to form an alignment layer by thermal curing, and rubbing is performed. Next, on the second main surface side of the glass substrate, the resin liquid for the sheet is drawn into a frame shape by a dispensing method, and the liquid crystal is dropped by a dispensing method in the frame, and then the glass is laminated using the glass laminate A2-1. The second main surface side of the glass substrate of the laminated body A2 is bonded to each other, and a laminate having an LCD panel is obtained by ultraviolet curing and thermal curing. Here, the laminated body having the LCD panel is hereinafter referred to as a laminated body B2.
其次，與實施例1同樣地，自附面板之積層體B2將兩面之附樹脂層之載體基板剝離，而獲得包含形成有TFT陣列之基板及形成有彩色濾光片之基板之LCD面板B(與電子裝置相當)。 Then, in the same manner as in the first embodiment, the laminated body B2 of the self-attached panel peels off the carrier substrate with the resin layers on both sides, thereby obtaining the LCD panel B including the substrate on which the TFT array is formed and the substrate on which the color filter is formed ( Equivalent to electronic devices).
於製作之LCD面板B連接IC驅動器並使其驅動，結果於驅動區域內未確認到顯示不均。 When the IC panel of the manufactured LCD panel B was connected and driven, the display unevenness was not confirmed in the drive area.
與實施例1同樣地，對載體基板之第1主表面進行純水清洗、UV清洗，而使其潔淨化。 In the same manner as in Example 1, the first main surface of the carrier substrate was subjected to pure water washing and UV cleaning to be cleaned.
其次，將實施例1中之於末端具有乙烯基之直鏈狀有機烯基聚矽氧烷、於分子內具有氫矽烷基之甲基氫聚矽氧烷、及鉑系觸媒之混合液99.5質量份與矽氧油(Dow Corning Toray公司製造，SH200)0.5質量份之混合物藉由絲網印刷而塗佈於載體基板之第1主表面上。其次，將其於250℃下於大氣中加熱硬化30分鐘，而形成厚度10 μm之硬化之矽氧樹脂層。 Next, a mixture of a linear organoalkenyl polyoxyalkylene having a vinyl group at the terminal, a methylhydrogenpolysiloxane having a hydrofluorenyl group in the molecule, and a platinum-based catalyst in Example 1 was used. A mixture of 0.5 parts by mass of a part by mass and a buffer of a fluorinated oil (manufactured by Dow Corning Toray Co., Ltd., SH200) was applied to the first main surface of the carrier substrate by screen printing. Next, it was heat-hardened in the atmosphere at 250 ° C for 30 minutes to form a hardened epoxy resin layer having a thickness of 10 μm.
繼而，對玻璃基板之第1主表面進行純水清洗、UV清洗而使其潔淨化後，於室溫下藉由真空壓機使其與形成於載體基板之第1主表面上之矽氧樹脂層密接，而獲得積層體P1。 Then, the first main surface of the glass substrate is subjected to pure water washing, UV cleaning, and cleaned, and then subjected to a vacuum press at room temperature to form a silicone resin formed on the first main surface of the carrier substrate. The layers are closely bonded to obtain a layered body P1.
而且，於積層體P1之玻璃基板上，藉由與實施例5相同之次序製作OLED後將附樹脂層之載體基板剝離，而獲得OLED面板(以下稱為面板P)。 Further, on the glass substrate of the laminate P1, an OLED was produced in the same manner as in Example 5, and then the carrier substrate with the resin layer was peeled off to obtain an OLED panel (hereinafter referred to as a panel P).
於製作之面板P連接IC驅動器並使其驅動，結果於驅動 區域內確認到顯示不均，不良部存在於與積層體P1之端部附近相當之部分。 Connect the IC driver to the manufactured panel P and drive it. As a result, drive In the area, unevenness was observed, and the defective portion was present in a portion corresponding to the vicinity of the end portion of the laminated body P1.
以與比較例1相同之方法獲得2片積層體P1。 Two laminated bodies P1 were obtained in the same manner as in Comparative Example 1.
其次，依據與實施例6相同之次序，使用2片積層體P1獲得具有LCD面板之積層體。進而，自所獲得之積層體將兩面之附樹脂層之載體基板剝離，而獲得LCD面板(以下稱為面板Q)。 Next, in the same order as in the embodiment 6, a laminate having an LCD panel was obtained using two laminated bodies P1. Further, the obtained laminated body was peeled off from the carrier substrate with the resin layers on both sides to obtain an LCD panel (hereinafter referred to as panel Q).
於製作之面板Q連接IC驅動器並使其驅動，結果於驅動區域內確認到顯示不均，不良部存在於與積層體P1之端部附近相當之部分。 When the panel driver Q is connected to the IC driver and driven, the display unevenness is confirmed in the driving region, and the defective portion exists in a portion corresponding to the vicinity of the end portion of the laminated body P1.
如上述實施例5及6所示，根據本發明之電子裝置之製造方法，可良率良好地製造性能優異之電子裝置。 As shown in the above-described fifth and sixth embodiments, according to the method of manufacturing an electronic device of the present invention, an electronic device having excellent performance can be manufactured with good yield.
另一方面，於專利文獻1中記載之先前之方法中，如上述比較例1及2所示，有引起所獲得之電子裝置之性能降低之情形。於比較例1及2中，於電子裝置之端部(周緣部)附近觀察到顯示不均。認為其係如上所述般因藉由硬化處理而獲得之樹脂層(尤其是樹脂層之外周緣附近)存在厚度不均，而於玻璃基板與樹脂層之間產生空隙，異物進入至該空隙中而產生電子裝置之性能降低。 On the other hand, in the prior method described in Patent Document 1, as shown in the above Comparative Examples 1 and 2, there is a case where the performance of the obtained electronic device is lowered. In Comparative Examples 1 and 2, display unevenness was observed in the vicinity of the end portion (peripheral portion) of the electronic device. It is considered that the resin layer obtained by the hardening treatment (especially in the vicinity of the periphery of the resin layer) has thickness unevenness as described above, and a void is generated between the glass substrate and the resin layer, and foreign matter enters the void. The performance of the resulting electronic device is reduced.
本申請案係基於2011年10月12日提出申請之日本專利申請案2011-225254者，其內容作為參照而併入本文。 The present application is based on Japanese Patent Application No. 2011-225254, filed on Jan.
10‧‧‧剝離性輔助基板 10‧‧‧Removable auxiliary substrate
12‧‧‧未硬化之硬化性樹脂組成物層 12‧‧‧Unhardened curable resin composition layer
14‧‧‧載體基板 14‧‧‧ Carrier substrate
16‧‧‧硬化前積層體 16‧‧‧Pre-hardening laminate
18‧‧‧樹脂層 18‧‧‧ resin layer
20‧‧‧硬化後積層體 20‧‧‧ hardened laminated body
22‧‧‧附樹脂層之載體基板 22‧‧‧ Carrier substrate with resin layer
24‧‧‧玻璃基板 24‧‧‧ glass substrate
26‧‧‧玻璃積層體 26‧‧‧Glass laminate
28‧‧‧電子裝置用構件 28‧‧‧Members for electronic devices
30‧‧‧附電子裝置用構件之積層體 30‧‧‧Laminated body of components for electronic devices
32‧‧‧電子裝置 32‧‧‧Electronic devices
34‧‧‧凸部 34‧‧‧ convex
36‧‧‧空隙 36‧‧‧ gap
圖1係表示本發明之電子裝置之製造方法之一實施形態 之製造步驟的流程圖。 1 is a view showing an embodiment of a method of manufacturing an electronic device of the present invention; A flow chart of the manufacturing steps.
圖2(A)~2(G)係按照步驟順序表示本發明之電子裝置之製造方法之一實施形態之模式性剖面圖。 2(A) to 2(G) are schematic cross-sectional views showing an embodiment of a method of manufacturing an electronic device according to the present invention in order of steps.
圖3(A)係於較佳態樣A中獲得之硬化前積層體之俯視圖。圖3(B)係於較佳態樣A中獲得之硬化前積層體之剖面圖。圖3(C)係表示於第1積層步驟中載體基板之積層前之狀態之部分剖面圖。圖3(D)係表示於第1積層步驟中積層載體基板後之狀態之部分剖面圖。 Fig. 3(A) is a plan view of the pre-hardened laminate obtained in the preferred embodiment A. Fig. 3(B) is a cross-sectional view of the pre-hardened laminate obtained in the preferred embodiment A. Fig. 3(C) is a partial cross-sectional view showing a state before lamination of the carrier substrate in the first lamination step. Fig. 3(D) is a partial cross-sectional view showing a state in which a carrier substrate is laminated in the first lamination step.
圖4係表示較佳態樣A之情形之第1分離步驟之模式性剖面圖。 Fig. 4 is a schematic cross-sectional view showing a first separation step in the case of the preferred aspect A.
圖5係表示本發明之電子裝置之製造方法之另一實施形態之製造步驟的流程圖。 Fig. 5 is a flow chart showing the manufacturing steps of another embodiment of the method of manufacturing the electronic device of the present invention.
圖6(A)係基於先前技術之附樹脂層之載體基板之剖面圖。圖6(B)係基於先前技術之積層體之端部之部分剖面圖。 Fig. 6(A) is a cross-sectional view of a carrier substrate based on a resin layer of the prior art. Fig. 6(B) is a partial cross-sectional view showing the end portion of the laminated body based on the prior art.
Claims (16)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011225254A JP5796449B2 (en) | 2011-10-12 | 2011-10-12 | Manufacturing method of electronic device, manufacturing method of carrier substrate with resin layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201315593A true TW201315593A (en) | 2013-04-16 |
Family
ID=48063038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101137510A TW201315593A (en) | 2011-10-12 | 2012-10-11 | Manufacturing method of electronic device and manufacturing method of carrier substrate with resin layer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5796449B2 (en) |
| KR (1) | KR20130039702A (en) |
| CN (1) | CN103050440A (en) |
| TW (1) | TW201315593A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI632099B (en) * | 2014-08-01 | 2018-08-11 | 日商日東電工股份有限公司 | Method for handling a display cell and a optical display cell and a cell motherboard of a thin film structure |
| TWI671113B (en) * | 2016-01-15 | 2019-09-11 | 日商双葉電子工業股份有限公司 | Desiccant, sealing structure and organic electroluminescent element |
| US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
| TWI681236B (en) * | 2014-01-31 | 2020-01-01 | 日商住友化學股份有限公司 | Optically anisotropic sheet |
| US10538452B2 (en) | 2012-12-13 | 2020-01-21 | Corning Incorporated | Bulk annealing of glass sheets |
| US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
| TWI696108B (en) * | 2015-02-13 | 2020-06-11 | 日商半導體能源研究所股份有限公司 | Functional panel, functional module, light-emitting module, display module, location data input module, light-emitting device, lighting device, display device, data processing device, and manufacturing method of functional panel |
| US11097509B2 (en) | 2016-08-30 | 2021-08-24 | Corning Incorporated | Siloxane plasma polymers for sheet bonding |
| US11123954B2 (en) | 2014-01-27 | 2021-09-21 | Corning Incorporated | Articles and methods for controlled bonding of thin sheets with carriers |
| US11167532B2 (en) | 2015-05-19 | 2021-11-09 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
| US11192340B2 (en) | 2014-04-09 | 2021-12-07 | Corning Incorporated | Device modified substrate article and methods for making |
| US11331692B2 (en) | 2017-12-15 | 2022-05-17 | Corning Incorporated | Methods for treating a substrate and method for making articles comprising bonded sheets |
| US11535553B2 (en) | 2016-08-31 | 2022-12-27 | Corning Incorporated | Articles of controllably bonded sheets and methods for making same |
| US11905201B2 (en) | 2015-06-26 | 2024-02-20 | Corning Incorporated | Methods and articles including a sheet and a carrier |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150073976A (en) * | 2012-10-17 | 2015-07-01 | 아사히 가라스 가부시키가이샤 | Glass laminate and manufacturing method therefor, and support base with silicone resin layer |
| KR102064405B1 (en) | 2014-02-04 | 2020-01-10 | 삼성디스플레이 주식회사 | Substrate peeling apparatus and substrate peeling method using the same |
| CN105098088B (en) * | 2014-05-05 | 2017-06-06 | Tcl集团股份有限公司 | A kind of flexible display and its film encapsulation method |
| JP6520383B2 (en) * | 2014-10-27 | 2019-05-29 | 三菱ケミカル株式会社 | Glass laminate |
| CN104820303B (en) * | 2015-05-22 | 2018-01-05 | 京东方科技集团股份有限公司 | Glass separation device and glass separation method |
| CN105185809B (en) * | 2015-08-03 | 2018-09-11 | 深圳市华星光电技术有限公司 | Production method, flexible glass substrate and the flexible display screen of flexible display screen |
| JP2020008790A (en) * | 2018-07-11 | 2020-01-16 | グンゼ株式会社 | Cover film, display having the same, manufacturing method of cover film, and manufacturing method of display |
| CN113394113B (en) * | 2021-05-17 | 2023-04-18 | 北京师范大学 | Transfer method and device for preparing low-dimensional material stacking structure |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW594947B (en) * | 2001-10-30 | 2004-06-21 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| CN101242951B (en) * | 2005-08-09 | 2012-10-31 | 旭硝子株式会社 | Thin sheet glass laminate and method for manufacturing display using thin sheet glass laminate |
| JP2009545872A (en) * | 2006-06-05 | 2009-12-24 | ダウ コーニング コーポレイシヨン | Solar cell including silicone resin layer |
| JP5532918B2 (en) * | 2007-03-12 | 2014-06-25 | 旭硝子株式会社 | Method for manufacturing display device using glass substrate with protective glass |
| JP2009186916A (en) * | 2008-02-08 | 2009-08-20 | Asahi Glass Co Ltd | Method of manufacturing display device panel |
-
2011
- 2011-10-12 JP JP2011225254A patent/JP5796449B2/en not_active Expired - Fee Related
-
2012
- 2012-10-11 TW TW101137510A patent/TW201315593A/en unknown
- 2012-10-12 CN CN2012103870341A patent/CN103050440A/en active Pending
- 2012-10-12 KR KR1020120113423A patent/KR20130039702A/en not_active Application Discontinuation
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
| US10538452B2 (en) | 2012-12-13 | 2020-01-21 | Corning Incorporated | Bulk annealing of glass sheets |
| US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
| US11123954B2 (en) | 2014-01-27 | 2021-09-21 | Corning Incorporated | Articles and methods for controlled bonding of thin sheets with carriers |
| TWI681236B (en) * | 2014-01-31 | 2020-01-01 | 日商住友化學股份有限公司 | Optically anisotropic sheet |
| US11192340B2 (en) | 2014-04-09 | 2021-12-07 | Corning Incorporated | Device modified substrate article and methods for making |
| TWI632099B (en) * | 2014-08-01 | 2018-08-11 | 日商日東電工股份有限公司 | Method for handling a display cell and a optical display cell and a cell motherboard of a thin film structure |
| TWI696108B (en) * | 2015-02-13 | 2020-06-11 | 日商半導體能源研究所股份有限公司 | Functional panel, functional module, light-emitting module, display module, location data input module, light-emitting device, lighting device, display device, data processing device, and manufacturing method of functional panel |
| US11167532B2 (en) | 2015-05-19 | 2021-11-09 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
| US11660841B2 (en) | 2015-05-19 | 2023-05-30 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
| US11905201B2 (en) | 2015-06-26 | 2024-02-20 | Corning Incorporated | Methods and articles including a sheet and a carrier |
| TWI671113B (en) * | 2016-01-15 | 2019-09-11 | 日商双葉電子工業股份有限公司 | Desiccant, sealing structure and organic electroluminescent element |
| US11097509B2 (en) | 2016-08-30 | 2021-08-24 | Corning Incorporated | Siloxane plasma polymers for sheet bonding |
| US11535553B2 (en) | 2016-08-31 | 2022-12-27 | Corning Incorporated | Articles of controllably bonded sheets and methods for making same |
| US11331692B2 (en) | 2017-12-15 | 2022-05-17 | Corning Incorporated | Methods for treating a substrate and method for making articles comprising bonded sheets |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103050440A (en) | 2013-04-17 |
| JP2013084526A (en) | 2013-05-09 |
| JP5796449B2 (en) | 2015-10-21 |
| KR20130039702A (en) | 2013-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201315593A (en) | Manufacturing method of electronic device and manufacturing method of carrier substrate with resin layer | |
| JP5790392B2 (en) | Manufacturing method of electronic device | |
| TWI580566B (en) | A manufacturing method of an electronic device, and a method for manufacturing a glass laminate | |
| JP5924344B2 (en) | LAMINATE, METHOD FOR PRODUCING LAMINATE, AND METHOD FOR PRODUCING GLASS SUBSTRATE WITH ELECTRONIC DEVICE MEMBER | |
| WO2014092015A1 (en) | Electronic device manufacturing method, and glass laminate manufacturing method | |
| TWI649192B (en) | Glass laminate, method of manufacturing same, and method of manufacturing electronic component | |
| JP6443350B2 (en) | Glass laminate | |
| TWI480165B (en) | Manufacture of electronic devices | |
| JP6610563B2 (en) | Glass laminate, electronic device manufacturing method, glass laminate manufacturing method, glass plate package | |
| TW201330123A (en) | Method for manufacturing electronic device with adherent resin layer | |
| TWI613073B (en) | Glass laminate, method of manufacturing the same, and support substrate with oxy-resin layer | |
| WO2014103678A1 (en) | Glass laminate, method for producing same, and supporting base with silicone resin layer | |
| WO2015146920A1 (en) | Glass laminate | |
| KR102526047B1 (en) | Glass laminate and method for producing same | |
| WO2015016113A1 (en) | Electronic device manufacturing method | |
| TWI656967B (en) | Glass laminated body, manufacturing method thereof, and manufacturing method of electronic device |