TW201302319A - Method of forming coating film, apparatus for forming coating film, and storage medium - Google Patents
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本發明係關於自狹縫狀噴吐口對被處理基板噴吐處理液，形成既定膜厚塗布膜之塗布膜形成方法及記憶媒體。 The present invention relates to a method and a memory medium for forming a coating film for forming a coating film of a predetermined film thickness from a slit-shaped ejection opening to a substrate to be processed.
製造例如FPD(平面顯示器)時，可藉由所謂光微影程序形成電路圖案。 When manufacturing, for example, an FPD (Planar Display), a circuit pattern can be formed by a so-called photolithography program.
此光微影程序中，於玻璃基板等被處理基板使既定膜成膜後，塗布係處理液之光抗蝕劑(以下稱光阻)，形成光阻膜(感光膜)。又，對應電路圖案使該光阻膜曝光，對其進行顯影處理，形成圖案。 In the photolithography process, a predetermined film is formed on a substrate to be processed such as a glass substrate, and then a photoresist (hereinafter referred to as a photoresist) of the treatment liquid is applied to form a photoresist film (photosensitive film). Further, the photoresist film is exposed in accordance with the circuit pattern, and is subjected to development processing to form a pattern.
如此之光微影程序中，作為於被處理基板塗布光阻液以形成光阻膜之方法，例如專利文獻1所揭示有下列方法：自狹縫狀噴嘴噴吐口呈帶狀噴吐光阻液，在基板上塗布光阻。 In such a photolithography process, as a method of applying a photoresist to a substrate to be processed to form a photoresist film, for example, Patent Document 1 discloses a method in which a strip-shaped nozzle is sprayed from a slit-shaped nozzle. A photoresist is coated on the substrate.
使用圖9簡單說明關於使用此方法之習知之光阻塗布裝置。 A conventional photoresist coating apparatus using this method will be briefly described using FIG.
圖9所示之光阻塗布裝置200包含：長條平台201，在其上輸送基板G；光阻供給噴嘴202，配置於該平台201上方；及基板輸送機構203，沿平台201長邊方向(X方向)輸送基板G。光阻供給噴嘴202中設有沿基板寬度方向(Y方向)延伸，具有微小間隙之狹縫狀噴吐口202a，將自光阻液供給源204經由泵205供給之光阻液自噴吐口202a噴吐。 The photoresist coating apparatus 200 shown in FIG. 9 includes an elongated platform 201 on which a substrate G is transported, a photoresist supply nozzle 202 disposed above the platform 201, and a substrate transport mechanism 203 along the longitudinal direction of the platform 201 ( The substrate G is transported in the X direction. The photoresist supply nozzle 202 is provided with a slit-like ejection opening 202a extending in the substrate width direction (Y direction) and having a small gap, and the photoresist liquid supplied from the photoresist supply source 204 via the pump 205 is ejected from the ejection opening 202a.
且基板輸送機構203包含：一對軌條203a，沿平台201舖設於其左右兩側；一對滑件203b，可沿軌條203a移動；及基板固持部203c，分別設於該滑件203b，分別自下方吸附固持基板G之角隅部。亦即，基板G四角 隅由基板固持部203c固持，藉由移動基座203b沿軌條203a移動基板G在平台201上移動。 The substrate transport mechanism 203 includes a pair of rails 203a disposed on the left and right sides of the platform 201, a pair of sliders 203b movable along the rails 203a, and a substrate holding portion 203c disposed on the sliders 203b, respectively. The corner portions of the holding substrate G are respectively adsorbed from below. That is, the four corners of the substrate G The crucible is held by the substrate holding portion 203c, and the substrate G is moved on the stage 201 by moving the substrate G along the rail 203a by the moving base 203b.
又，圖9所示之構成中，基板G呈在平台201上浮升之狀態，俾基板G下表面不接觸平台201。具體而言，於平台201上表面設有噴出空氣之複數空氣孔201a，藉由自此等空氣孔201a噴出之氣流將基板G下表面往上推。 Further, in the configuration shown in FIG. 9, the substrate G is in a state of being lifted up on the stage 201, and the lower surface of the substrate G is not in contact with the stage 201. Specifically, a plurality of air holes 201a for ejecting air are provided on the upper surface of the stage 201, and the lower surface of the substrate G is pushed up by the air flow ejected from the air holes 201a.
如此構成之光阻塗布裝置中，於基板G塗布形成光阻膜時，藉由基板輸送機構203在平台201上開始輸送基板G。 In the photoresist coating apparatus configured as described above, when the resist film is formed on the substrate G, the substrate G is started to be transported on the stage 201 by the substrate transport mechanism 203.
且基板G前端部一旦到達光阻供給噴嘴202下方，即停止輸送基板G。 When the front end portion of the substrate G reaches below the photoresist supply nozzle 202, the substrate G is stopped.
又，在對準噴嘴202之噴吐口202a與基板G前端之狀態下，自噴吐口202a開始噴吐光阻液，且再次開始輸送基板G。藉此，在基板G上呈膜狀塗布光阻液。 Further, in a state in which the ejection opening 202a of the nozzle 202 is aligned with the tip end of the substrate G, the photoresist is ejected from the ejection opening 202a, and the substrate G is again transported. Thereby, the photoresist liquid is applied to the substrate G in a film form.
且基板G後端一旦到達噴嘴202下方，即停止自噴吐口202a噴吐光阻液，並停止輸送基板G，在基板G上形成既定膜厚之光阻膜。 When the rear end of the substrate G reaches the lower side of the nozzle 202, the photoresist is stopped from the ejection opening 202a, and the substrate G is stopped, and a photoresist film having a predetermined film thickness is formed on the substrate G.
又，圖9所示之光阻塗布裝置200中，如上述噴嘴前端噴吐口202a在自基板G前端至後端相對掃描之期間內，自噴吐口202a噴吐光阻液。 Further, in the photoresist coating apparatus 200 shown in FIG. 9, when the nozzle tip end ejection port 202a is scanned from the front end to the rear end of the substrate G, the photoresist is ejected from the ejection opening 202a.
此塗布期間中，基板G自停止狀態加速至既定速度，以一定速度經輸送後停止。另一方面，對噴嘴202供給光阻液之泵205其泵內壓上昇至既定值，至塗布期間結束止維持該既定壓力後減壓。 During this coating period, the substrate G is accelerated from a stopped state to a predetermined speed, and is stopped after being conveyed at a constant speed. On the other hand, the pump 205 that supplies the photoresist to the nozzle 202 raises the internal pressure of the pump to a predetermined value, and after the end of the coating period, the predetermined pressure is maintained and the pressure is reduced.
在此，該基板G之輸送速度及泵內壓一定時，自噴嘴噴吐口202a穩定噴吐一定流量之光阻液，形成一定膜厚。 Here, when the conveyance speed of the substrate G and the internal pressure of the pump are constant, the photoresist liquid of a constant flow rate is stably discharged from the nozzle discharge port 202a to form a constant film thickness.
然而，塗布開始時，即使基板G輸送開始(加速時)時機，與泵205啟動(泵內壓上昇)時機同時，且始終處於比例關係，亦有於基板G前端部光阻膜不呈所希望之膜厚，基板G有效面積(作為製品可使用之區域)小之課題。 However, at the start of the coating, even if the timing of the substrate G start (acceleration) is started, the pump 205 is started (the pump internal pressure rises) at the same time, and is always in a proportional relationship, and the photoresist film at the front end of the substrate G is not expected. The film thickness is small and the effective area of the substrate G (the area that can be used as a product) is small.
產生該課題係因在對基板G進行塗布動作(基板G與泵之動作)以前，於噴嘴噴吐口202a會附著有預備注給處理後光阻液之***部(以下稱珠粒)，此少量光阻液於塗布開始部，會對光阻膜膜厚造成影響。 This problem is caused by the fact that before the coating operation on the substrate G (the operation of the substrate G and the pump), the bulging portion (hereinafter referred to as a bead) of the photoresist liquid after the preliminary injection treatment is adhered to the nozzle ejection opening 202a. The photoresist at the coating start portion affects the thickness of the photoresist film.
為解決該課題，以往藉由使用來分別將噴嘴202噴吐壓力之時間特性及基板輸送速度之時間特性加以控制之噴吐壓力控制波形及基板輸送速度控制波形其中至少一者於塗布動作中每次可變或將其加以修正之方法，進行了無數次準用於實際塗布處理之試驗用塗布處理。 In order to solve this problem, at least one of the ejection pressure control waveform and the substrate transport speed control waveform which are controlled by the use of the time characteristic of the ejection pressure of the nozzle 202 and the time characteristic of the substrate transport speed are used in the coating operation. The method of modifying or modifying the same has been carried out for a number of times for the coating treatment for the actual coating treatment.
又，決定其中可獲得膜厚均一性最優異之光阻膜之噴吐壓力控制波形及基板輸送速度控制波形之組合，分別使用該經決定之噴吐壓力控制波形及基板輸送速度控制波形於實際塗布處理中之噴吐壓力控制及基板輸送速度控制。 Further, a combination of the ejection pressure control waveform and the substrate transport speed control waveform of the photoresist film having the most excellent film thickness uniformity is determined, and the determined ejection pressure control waveform and the substrate transport speed control waveform are respectively used in actual coating processing. The ejection pressure control and the substrate conveying speed control.
【專利文獻1】日本特開2005-243670號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-243670
然而，如上述重複進行許多試驗用塗布處理並藉由嘗試錯誤求取塗布處理最佳條件之方法不僅需現場操作員具有相當之熟練 度並需大量作業時間，且為進行試驗用塗布處理需使用多數基板，故實施時有系統上之煩雜性，且有成本膨脹之課題。 However, the method of repeating a plurality of test coating processes as described above and attempting to obtain the optimum conditions of the coating process by mistake is not only required to be quite skilled by the field operator. The degree of work requires a large amount of work time, and a large number of substrates are required for the coating process for the test. Therefore, there is a problem of system cumbersome and cost expansion.
鑑於如上述習知技術之問題點，本發明提供一種塗布膜形成方法及記憶媒體，自狹縫狀噴吐口對被處理基板噴吐處理液以形成塗布膜，其特徵在於無關於噴嘴噴吐口之珠粒量及自噴嘴噴吐口噴吐壓力之變化，不取決於現場操作員之熟練度，可進行穩定之膜厚形成，於基板形成之塗布膜有效面積可為廣範圍。 In view of the problems of the above-described conventional techniques, the present invention provides a coating film forming method and a memory medium, which eject a processing liquid from a slit-shaped ejection opening to a substrate to be processed to form a coating film, which is characterized in that no bead is attached to the nozzle. The change in the amount of particles and the discharge pressure from the nozzle spout does not depend on the skill of the field operator, and can form a stable film thickness, and the effective area of the coating film formed on the substrate can be wide.
為解決上述課題，依本發明之塗布膜形成方法於狹縫狀噴嘴噴吐口形成處理液珠粒，並自該噴吐口朝在該噴吐口下方相對於該噴吐口移動之被處理基板噴吐處理液，在該基板上形成既定膜厚之塗布膜，其特徵在於：若於既定之經過時間Ts該珠粒量之差分為△B，於既定之經過時間Ts期間內來自該噴吐口處理液之噴吐流量為Q，在基板上處理液乾燥固化分之濃度為β，該噴嘴噴吐口基板寬度方向之尺寸為L，於經過時間Ts該基板之相對移動速度為V，於經過時間Ts之推定膜厚Th即由下列數式(1)規定，【數式1】Th=(△B+Q)．β/(Ts．V．L)………(1) In order to solve the above problems, the coating film forming method according to the present invention forms the processing liquid beads in the slit nozzle opening, and ejects the processing liquid from the ejection opening toward the substrate to be processed which is moved below the ejection opening with respect to the ejection opening. A coating film having a predetermined film thickness is formed on the substrate, wherein the difference in the amount of beads is ΔB for a predetermined elapsed time Ts, and the ejection from the ejection opening treatment liquid during a predetermined elapsed time Ts The flow rate is Q, the concentration of the drying and solidifying component of the processing liquid on the substrate is β, the dimension of the nozzle in the width direction of the substrate is L, and the relative moving speed of the substrate is V at the elapsed time Ts, and the film thickness is estimated by the elapsed time Ts. Th is defined by the following formula (1), [Expression 1] Th = (△ B + Q). β /(Ts.V.L).........(1)
該塗布膜形成方法包含下列步驟： The coating film forming method comprises the following steps:
將目標膜厚代入該數式(1)之推定膜厚Th，以該基板之相對移動速度V為變數，藉此於每一時間Ts求取該基板之相對移動速度V；及按照該於每一時間Ts求得之該基板之相對移動速度V，控制相對於該噴嘴噴吐口該基板之相對移動速度。 Substituting the target film thickness into the estimated film thickness Th of the equation (1), and using the relative moving speed V of the substrate as a variable, thereby obtaining the relative moving speed V of the substrate at each time Ts; The relative moving speed V of the substrate obtained at a time Ts controls the relative moving speed of the substrate relative to the nozzle spout.
又，若該珠粒量為Bn，時間Ts前之珠粒量為Bn-1，顯示自該噴嘴噴吐口噴吐之處理液附著於該基板時之附著度之基板附著係數為μ， Further, when the amount of the beads is B n , the amount of beads before the time Ts is B n-1 , and the substrate adhesion coefficient indicating the adhesion of the treatment liquid sprayed from the nozzle discharge port to the substrate is μ,
該珠粒量Bn即宜由數式(2)規定，【數式2】Bn=Bn-1+Q-Bn-1．μ．Ts．V．L………(2) The amount of beads B n is preferably defined by the formula (2), [Expression 2] B n = B n-1 + QB n-1 . μ . Ts. V. L.........(2)
(n為1以上之整數) (n is an integer greater than 1)
根據數式(2)，設常數式(1)於經過時間Ts該珠粒量之差分△B=Bn-Bn-1。 According to the formula (2), the difference ΔB = B n - B n-1 of the amount of beads of the constant formula (1) over the elapsed time Ts is set.
如此用來計算推定膜厚Th之該式(1)中，作為推定膜厚Th代入目標膜厚值，以係式中參數之基板相對移動速度V為變數，藉此於每一時間Ts求取必要之基板相對移動速度V。 In the equation (1) for calculating the estimated film thickness Th, the estimated film thickness Th is substituted into the target film thickness value, and the relative movement speed V of the parameter in the system is used as a variable, thereby obtaining the time Ts at each time. The necessary substrate relative movement speed V.
亦即，按照該求得之基板相對移動速度V控制基板輸送，藉此可使塗布形成之實際塗布膜膜厚與目標值大致一致。 That is, the substrate conveyance is controlled in accordance with the obtained substrate relative moving speed V, whereby the film thickness of the actual coating film formed by coating can be made substantially coincident with the target value.
因此，無關於噴嘴噴吐口之珠粒量及來自噴嘴噴吐口噴吐壓力之變化，不取決於現場操作員之熟練度，僅以基板相對移動速度之控制即可使塗布膜膜厚為所希望之膜厚。藉此，即使在噴吐壓力上升，塗布開始時亦可穩定控制膜厚，可使於基板形成之塗布膜有效面積(製品可利用區域)為廣範圍。 Therefore, regardless of the amount of beads in the nozzle discharge port and the change in the discharge pressure from the nozzle discharge port, the thickness of the coating film can be made desired only by controlling the relative movement speed of the substrate, depending on the skill of the field operator. Film thickness. Thereby, even when the discharge pressure rises, the film thickness can be stably controlled at the start of coating, and the effective area (product available area) of the coating film formed on the substrate can be made wide.
且在將目標膜厚代入該數式(1)之推定膜厚Th，以該基板之相對移動速度V為變數，藉此於每一時間Ts求取該基板之相對移動速度V之步驟前，宜實行下列步驟：以既定噴吐壓力P在該基板上噴吐處理液，並令該基板以既定之相對移動速度V相對於該噴嘴噴吐口移動；收集每一時間Ts該噴吐壓力P與該基板相對移動速度V之反饋資料；將既定係數乘該經收集之噴吐壓力P，計算於每一時間Ts來自該噴吐口之噴吐流量Q；分別設定既定假設值為該數式(2)中該珠粒量之初期值B0與基板附著係數μ，並設定該噴嘴噴吐口基板寬度方向之尺寸L與時間Ts，根據該經計算之噴吐流量Q與該經收集之基板相對移動速度V於每一時間Ts計算珠粒量Bn；設定該數式(1)中處理液在基板上乾燥固化分之濃度 β、該經計算之珠粒量Bn、該噴嘴噴吐口基板寬度方向之尺寸L與時間Ts，根據該噴吐流量Q與該經收集之基板相對移動速度V於每一時間Ts計算推定膜厚Th；及比較該經計算之推定膜厚Th與在該基板上所形成之塗布膜實際膜厚，至該值一致為止變更該珠粒量之初期值B0及基板附著係數μ之假設值，運算該數式(1)及數式(2)，計算推定膜厚Th；且將該經計算之推定膜厚Th與該實際膜厚之值一致時該珠粒量之初期值B0及基板附著係數μ作為常數使用。 And substituting the target film thickness into the estimated film thickness Th of the equation (1), and using the relative moving speed V of the substrate as a variable, before the step of obtaining the relative moving speed V of the substrate at each time Ts, Preferably, the following steps are performed: spraying the treatment liquid on the substrate at a predetermined ejection pressure P, and moving the substrate relative to the nozzle ejection opening at a predetermined relative moving speed V; collecting the ejection pressure P at each time Ts is opposite to the substrate The feedback data of the moving speed V; multiplying the predetermined coefficient by the collected ejection pressure P, and calculating the ejection flow rate Q from the ejection opening at each time Ts; respectively setting the predetermined hypothesis value as the bead in the formula (2) The initial value B 0 and the substrate adhesion coefficient μ are set, and the dimension L and the time Ts in the width direction of the nozzle ejection opening substrate are set, and the calculated ejection flow rate Q and the collected substrate relative movement speed V are used at each time according to the calculated ejection flow rate Q. Ts calculates the amount of beads B n ; sets the concentration β of the dried solidification of the treatment liquid on the substrate in the equation (1), the calculated amount of beads B n , the dimension L of the width direction of the nozzle ejection substrate, and time Ts, according to the jet stream Calculating the estimated film thickness Th with respect to the collected substrate relative moving speed V at each time Ts; and comparing the calculated estimated film thickness Th with the actual film thickness of the coating film formed on the substrate, to the same value The assumed value of the initial value B 0 of the amount of beads and the substrate adhesion coefficient μ is changed, the equation (1) and the formula (2) are calculated, and the estimated film thickness Th is calculated; and the calculated film thickness Th is calculated. When the value of the actual film thickness coincides with the value of the actual film thickness, the initial value B 0 of the bead amount and the substrate adhesion coefficient μ are used as constants.
藉由進行如此之步驟作為準備程序，可鑑別該式(1)、式(2)必要之參數。 By performing such a procedure as a preparation program, the parameters necessary for the equations (1) and (2) can be identified.
亦即，該珠粒量之初期值B0及基板附著係數μ係由處理液種類或被處理基板種類等決定之常數，故若不實際實施塗布處理即無法求得。因此，至少1次以既定噴吐壓力、既定基板相對移動速度實施塗布處理，根據其實施資料，設定該式(1)、式(2)可設定之參數。又，將既定假設數輸入該式(2)中該珠粒量之初期值B0及基板附著係數μ，直到獲得與測定之實際膜厚一致之推定膜厚值Th止重複設定假設數，藉此可導出該處理配方中該珠粒量之初期值B0及基板附著係數μ。 In other words, the initial value B 0 of the amount of beads and the substrate adhesion coefficient μ are constants determined by the type of the treatment liquid or the type of the substrate to be processed, and thus cannot be obtained unless the coating treatment is actually carried out. Therefore, the coating process is performed at a predetermined discharge pressure and a predetermined substrate relative movement speed at least once, and the parameters that can be set by the equations (1) and (2) are set based on the implementation data. Further, the predetermined hypothesis number is input to the initial value B 0 of the bead amount and the substrate adhesion coefficient μ in the formula (2) until the estimated film thickness value Th corresponding to the measured actual film thickness is obtained, and the hypothesis is repeated. This can derive the initial value B 0 of the amount of beads in the treatment formulation and the substrate adhesion coefficient μ.
且依本發明之記憶媒體記憶有控制塗布膜形成裝置之電腦可執行程式，該塗布膜形成裝置用來於被處理基板形成既定膜厚之塗布膜，其特徵在於：藉由於該塗布膜形成裝置執行該程式，於該塗布膜形成裝置實行上述塗布膜形成方法各步驟。 And the memory medium according to the present invention has a computer executable program for controlling the coating film forming device for forming a coating film having a predetermined film thickness on the substrate to be processed, characterized in that the coating film forming device This procedure is carried out, and each step of the above-described coating film forming method is carried out in the coating film forming apparatus.
且依本發明之塗布膜形成裝置於狹縫狀噴嘴噴吐口形成處理液珠粒，並自該噴吐口朝於該噴吐口下方相對於該噴吐口移動之被處理基板噴吐處理液，在該基板上形成既定膜厚之塗布膜，其特徵在於：實行上述塗布膜形成方法各步驟。 Further, the coating film forming apparatus according to the present invention forms the processing liquid bead on the slit-shaped nozzle ejection opening, and ejects the processing liquid from the ejection opening to the substrate to be processed which is moved below the ejection opening with respect to the ejection opening. A coating film having a predetermined film thickness is formed thereon, and each step of the above-described coating film forming method is carried out.
依本發明，可獲得一種塗布膜形成方法及記憶媒體，自狹縫狀噴吐口對被處理基板噴吐處理液以形成塗布膜，其特徵在於無關於噴嘴噴吐口之珠粒量及自噴嘴噴吐口噴吐壓力之變化，不取決於現場操作員之熟練度，可進行穩定之膜厚形成，於基板形成之塗布膜有效面積可為廣範圍。 According to the present invention, a coating film forming method and a memory medium can be obtained, and a processing liquid is discharged from a slit-shaped ejection opening to a substrate to be processed to form a coating film, which is characterized in that the amount of beads of the nozzle ejection opening and the nozzle ejection opening are not included. The change in the ejection pressure does not depend on the skill of the field operator, and a stable film thickness can be formed, and the effective area of the coating film formed on the substrate can be wide.
以下，根據圖式說明依本發明之塗布膜形成方法之一實施形態。又，此實施形態中，舉依本發明之塗布膜形成方法於浮升輸送係被處理基板之玻璃基板，並同時對該基板進行係處理液之光阻液之塗布處理之光阻塗布處理單元中實施之情形為例說明。 Hereinafter, an embodiment of a coating film forming method according to the present invention will be described based on the drawings. Further, in this embodiment, the coating film forming method according to the present invention is a photoresist coating processing unit that floats the glass substrate of the substrate to be processed and simultaneously applies a photoresist solution to the substrate. The case of implementation is illustrated as an example.
圖1係實施本發明之塗布膜形成方法之光阻塗布單元之俯視圖，圖2係圖1之A-A箭視剖面圖。 Fig. 1 is a plan view showing a photoresist coating unit for carrying out a coating film forming method of the present invention, and Fig. 2 is a cross-sectional view taken along line A-A of Fig. 1.
如圖1、圖2所示，此光阻塗布處理單元1包含用來以單片式逐一浮升輸送玻璃基板G之浮升輸送平台2，基板G經所謂水平移動輸送。 As shown in FIG. 1 and FIG. 2, the photoresist coating processing unit 1 includes a floating transport platform 2 for transporting the glass substrate G one by one in a single sheet, and the substrate G is transported by so-called horizontal movement.
浮升平台2沿基板輸送方向(X方向)依序配置基板送入部2A、塗布處理部2B與基板送出部2C。於基板送入部2A及基板送出部2C上表面，如圖1所示沿X方向與Y方向以一定間隔設有多數氣體噴出口2a，藉由自氣體噴出口2a噴出惰性氣體造成壓力負載，使玻璃基板G浮升。且於塗布處理部2B上表面沿X方向與Y方向以一定間隔交互設置多數氣體噴出口2a與氣體吸氣口2b。又，此塗布處理部2B中，藉由使來自氣體噴出口2a之惰性氣體噴出量，與來自氣體吸氣口2b之吸氣量之壓力負載一定，使玻璃基板G以更接***台之狀態浮升。 The floating platform 2 sequentially arranges the substrate feeding portion 2A, the coating processing portion 2B, and the substrate feeding portion 2C in the substrate conveying direction (X direction). On the upper surface of the substrate feeding portion 2A and the substrate feeding portion 2C, as shown in FIG. 1, a plurality of gas ejection ports 2a are provided at regular intervals in the X direction and the Y direction, and a pressure load is generated by injecting an inert gas from the gas ejection port 2a. The glass substrate G is floated. Further, a plurality of gas discharge ports 2a and a gas intake port 2b are alternately arranged at a constant interval in the X direction and the Y direction on the upper surface of the coating treatment portion 2B. In the coating treatment unit 2B, the pressure of the inert gas from the gas discharge port 2a is constant, and the pressure load from the gas intake port 2b is constant, so that the glass substrate G floats closer to the platform. Rise.
且於浮升平台2寬度方向(Y方向)左右側方，設有沿X方向平行延伸之一對導軌5。於此一對導軌5設有安裝成可沿基板輸送方向(X方向)移動之滑件6，於各滑件6前端部及後端部分別設有自下方吸附固持玻璃基板G單側2角隅之基板固持部7。 On the left and right sides in the width direction (Y direction) of the floating platform 2, a pair of guide rails 5 extending in parallel in the X direction are provided. The pair of guide rails 5 are provided with a slider 6 that is mounted to be movable in the substrate transport direction (X direction), and the front end portion and the rear end portion of each of the sliders 6 are respectively provided with two sides of the glass substrate G from the lower side. The substrate holding portion 7 of the crucible.
各基板固持部7如圖2所示，包含：吸附構件7a，可藉由抽吸動作吸附基板G下表面；及昇降驅動部7b，使吸附構件7a昇降移動。 As shown in FIG. 2, each of the substrate holding portions 7 includes an adsorption member 7a that can adsorb the lower surface of the substrate G by a suction operation, and an elevation driving portion 7b that moves the adsorption member 7a up and down.
又，吸附構件7a連接抽吸泵(未經圖示)，藉由抽吸與基板G之接觸區域之空氣使其接近真空狀態，藉此吸附於基板G。 Further, the adsorption member 7a is connected to a suction pump (not shown), and is sucked to the substrate G by sucking the air in the contact region with the substrate G to a vacuum state.
且滑件6由輸送驅動部8控制其移動之開始及停止以及移動速度，輸送驅動部8由包含電腦之控制部10控制動作。且該昇降驅動部7b與該抽吸泵亦由控制部10控制其驅動。 Further, the slider 6 controls the start and stop of the movement and the moving speed by the conveyance drive unit 8, and the conveyance drive unit 8 is controlled by the control unit 10 including the computer. The lift drive unit 7b and the suction pump are also controlled to be driven by the control unit 10.
且如圖1、圖2所示，在浮升平台2上設有對玻璃基板G噴吐光阻液之噴嘴11。噴嘴11沿Y方向大致形成為較長的例如立方體形狀，形成為較玻璃基板G之Y方向寬長。如圖2所示於噴嘴11下端部形成沿浮升平台3寬度方向較長的狹縫狀噴吐口11a，於此噴嘴11自光阻液供給機構30供給光阻液。 As shown in FIG. 1 and FIG. 2, the floating platform 2 is provided with a nozzle 11 for spraying a photoresist on the glass substrate G. The nozzle 11 is formed substantially in a long, for example, cubic shape in the Y direction, and is formed to be wider than the Y direction of the glass substrate G. As shown in FIG. 2, a slit-like ejection opening 11a which is long in the width direction of the floating platform 3 is formed at the lower end portion of the nozzle 11, and the nozzle 11 supplies the photoresist liquid from the photoresist liquid supply mechanism 30.
且如圖1所示噴嘴11安裝於門形或倒ㄇ字形之框架12，藉由具有例如滾珠螺桿機構之噴嘴昇降部13之驅動可沿Z方向昇降移動。 Further, as shown in Fig. 1, the nozzle 11 is attached to the door-shaped or inverted U-shaped frame 12, and is movable up and down in the Z direction by driving of the nozzle lifting portion 13 having, for example, a ball screw mechanism.
圖3係顯示光阻供給機構30構成之方塊圖。光阻供給機構30如圖3所示包含：瓶子20，儲存光阻液R；及光阻泵22，可自該瓶子20經由吸入管21填充至少塗布處理1次分(基板1片分)之光阻液R。於塗布處理時，自光阻泵22經由光阻液供給管23對噴嘴11壓送光阻液R，自噴嘴11在基板G上噴吐光阻液R。 FIG. 3 is a block diagram showing the configuration of the photoresist supply mechanism 30. As shown in FIG. 3, the photoresist supply mechanism 30 includes a bottle 20, a storage photoresist R, and a photoresist pump 22, which can be filled with at least one coating process (substrate 1 chip) from the bottle 20 via the suction pipe 21. Photoresist liquid R. At the time of the coating process, the resist liquid R is pressure-fed from the photoresist pump 22 to the nozzle 11 via the photoresist liquid supply tube 23, and the photoresist R is ejected from the nozzle 11 on the substrate G.
且於吸入管21途中設有例如氣動閥所構成之開合閥24，可導通(全開導通)或切斷(隔斷)吸入管21中光阻液R之流動。 Further, an opening and closing valve 24 composed of, for example, a pneumatic valve is provided in the middle of the suction pipe 21, and the flow of the photoresist R in the suction pipe 21 can be turned on (fully turned on) or cut (interrupted).
且於光阻液供給管23途中設置例如氣動閥所構成之開合閥25，可導通(全開導通)或切斷(隔斷)光阻液供給管23中光阻液R之流動。且於光阻液供給管23安裝壓力感測器26。此壓力感測器26由例如錶壓力計所構成，以大氣壓為基準計測於感測器安裝位置光阻供給管23內光阻液R之壓力，輸出以錶壓力表示壓力測定值之電信號。此壓力感測器26之輸出為反饋控制等對控制器10供給之。 Further, an opening and closing valve 25 composed of, for example, a pneumatic valve is provided in the middle of the photoresist liquid supply pipe 23, so that the flow of the photoresist liquid R in the photoresist liquid supply pipe 23 can be turned on (fully turned on) or cut (interrupted). The pressure sensor 26 is mounted on the photoresist supply pipe 23. The pressure sensor 26 is composed of, for example, a gauge pressure gauge, and measures the pressure of the photoresist R in the photoreceptor supply tube 23 at the sensor mounting position based on the atmospheric pressure, and outputs an electric signal indicating the pressure measurement value by the gauge pressure. The output of this pressure sensor 26 is supplied to the controller 10 for feedback control or the like.
且泵22例如由注射泵構成，包含：泵本體22a，具有泵室；柱塞22b，用來任意改變泵室容積；及泵驅動部22c，用來使該柱塞22b往復運動。 The pump 22 is constituted, for example, by a syringe pump, and includes a pump body 22a having a pump chamber, a plunger 22b for arbitrarily changing the pump chamber volume, and a pump driving portion 22c for reciprocating the plunger 22b.
且此光阻塗布單元1中，於控制部10具有之記憶機構10a之記憶媒體儲存有(電腦可執行之)模擬程式P，以根據來自噴嘴11光阻液R之噴吐壓力與基板G輸送速度推定塗布膜厚。記憶媒體可係硬碟等固定式者，亦可係CD-ROM、DVD等可攜式者。此模擬程式P如圖4所示包含參數鑑別部35與調諧部36。 In the photoresist coating unit 1, the memory medium of the memory mechanism 10a included in the control unit 10 stores a (computer-executable) simulation program P for the ejection pressure from the nozzle 11 and the substrate G delivery speed. The coating film thickness is estimated. The memory medium can be a fixed type such as a hard disk, or a portable person such as a CD-ROM or a DVD. This simulation program P includes a parameter discriminating unit 35 and a tuner unit 36 as shown in FIG.
參數鑑別部35係用來鑑別下列者之程式：對應係處理液之光阻液種類、玻璃基板G種類等每一批次之處理條件(以下稱配方)決定之固有參數(以下稱配方固有參數)，具體而言，於噴嘴11噴吐口11a之初期持入光阻量B0，與表示光阻液R自噴嘴噴吐口11a附著基板面時之附著度之基板附著係數μ。 The parameter discriminating unit 35 is used to identify the following parameters: the inherent parameters determined by the processing conditions (hereinafter referred to as recipes) of each batch of the photoresist liquid type of the processing liquid and the type of the glass substrate G (hereinafter referred to as the formulation inherent parameters) Specifically, the amount of resistivity B 0 held in the initial stage of the nozzle 11 of the nozzle 11 and the adhesion coefficient μ of the degree of adhesion when the resist liquid R adheres to the substrate surface from the nozzle discharge port 11a.
又，該初期持入光阻量B0係加總下列者之量：於預備注給處理後附著於噴嘴噴吐口11a之光阻液R***部(以下稱珠粒)之液量，與為使該珠粒附著基板面而噴吐之光阻液量。 In addition, the amount of the initial holding photoresist amount B 0 is the sum of the amount of the photoresist liquid R bulging portion (hereinafter referred to as a bead) attached to the nozzle ejection opening 11a after the preliminary injection treatment, and The amount of photo-resistance of the beads is adhered to the surface of the substrate.
且此參數鑑別部35中，為鑑別該配方固有參數(B0、μ)使用下列者：每經過時間Ts推定於塗布處理程序中形成之光阻膜膜厚之 下述膜厚推定式(1)，及每經過時間Ts推定於噴嘴前端形成之珠粒量之珠粒量推定式(2)。 Further, in the parameter discriminating unit 35, in order to discriminate the formulation-specific parameters (B 0 , μ), the following film thickness estimation formula (1) is estimated from the film thickness of the photoresist film formed in the coating process per elapsed time Ts. And, the amount of beads estimated by the amount of beads formed at the tip end of the nozzle per time Ts is estimated (2).
具體而言，鑑別藉由下述式(1)求得之推定膜厚Th，與塗布形成之光阻膜之實際膜厚一致之配方固有參數(B0、μ)。 Specifically, the intrinsic parameters (B 0 , μ) of the estimated film thickness Th obtained by the following formula (1) and the actual film thickness of the photoresist film formed by coating are identified.
【數式3】式(1)：Thn=(Bn-1-Bn+Q)．β/(△Xn．L)………(1a)=(Bn-1-Bn+P．α)．β/(Ts．V．L)………(1b) 式(2)：Bn=Bn-1+Q．Ts-Bn-1．μ．△Xn．L………(2a)=Bn-1+P．α．Ts-Bn-1．μ．Ts．V．L………(2b) [Expression 3] Formula (1): Th n = (B n-1 - B n + Q). β /(ΔX n .L)...(1a)=(B n-1 -B n +P. α ). β /(Ts.V.L)...(1b) Formula (2): B n =B n-1 +Q. Ts-B n-1 . μ . △X n . L.........(2a)=B n-1 +P. α . Ts-B n-1 . μ . Ts. V. L.........(2b)
又，該式(1)、(2)中，Th係膜厚，B係噴嘴前端之珠粒量，Q係於時間Ts期間自噴嘴噴吐口11a噴吐之光阻液量(Q係噴吐壓力P乘流量/壓力係數α所求得者)，β係在基板上噴吐而乾燥固化分之光阻濃度，△X係基板移動量(基板輸送速度V(基板G之相對移動速度)與時間Ts之積)，L係噴嘴噴吐口11a之寬度尺寸(基板寬度方向之尺寸)。且n係1以上之整數。 Further, in the above formulas (1) and (2), the Th-based film thickness is the amount of beads in the tip end of the B-type nozzle, and Q is the amount of the photo-resistance liquid which is ejected from the nozzle ejection opening 11a during the time Ts (Q-type ejection pressure P) By the flow rate/pressure coefficient α, the β-system is sprayed on the substrate to dry and solidify the photoresist concentration, and the ΔX-based substrate shift amount (substrate transport speed V (relative moving speed of the substrate G) and time Ts) The width dimension (the dimension in the width direction of the substrate) of the nozzle nozzle 11a of the L system. And n is an integer of 1 or more.
亦即，式(1)中，於時間Ts期間內塗布之光阻膜膜厚Th如圖5(a)、圖5(b)所示意顯示，係時間Ts中珠粒量之差△B=(Bn-1-Bn)與新噴吐之量Q之和(圖5之影線部)中乾燥固化之體積除時間Ts期間內之塗布面積(△Xn．L)之值。 That is, in the formula (1), the film thickness Th of the photoresist film applied during the time Ts is as shown in Fig. 5 (a) and Fig. 5 (b), and the difference in the amount of beads in the time Ts is ΔB = The value of the area to be dried and solidified in the sum of (B n-1 -B n ) and the amount of new ejection Q (the hatching portion in Fig. 5) in addition to the coated area (ΔX n .L) during the period Ts.
且式(2)中，噴嘴前端之珠粒量Bn(圖5(a)之交叉影線部)係自緊接在前之珠粒量Bn-1與新噴吐之量Q之和減附著於基板G之量(Bn-1．μ．△Xn．L)之量。 In the formula (2), the amount of beads B n at the tip end of the nozzle (the cross-hatched portion of Fig. 5(a)) is the sum of the amount of beads B n-1 immediately after the contact and the amount Q of the new discharge. The amount of adhesion to the substrate G (B n-1 .μ.ΔX n .L).
且調諧部36係用來使用該式(1)、式(2)，根據作為目標之膜厚值，求取必要之基板輸送速度V之程式。此程式中，作為該式(1)之參數，使用於參數鑑別部35所鑑別之配方固有參數等，且固定 推定膜厚Th為目標膜厚值，以基板輸送速度V為變數，藉此求取必要之基板輸送速度V。 Further, the tuner unit 36 is configured to obtain a necessary substrate transport speed V based on the target film thickness value using the equations (1) and (2). In this program, as a parameter of the formula (1), the formula-specific parameters identified by the parameter discriminating unit 35 are used, and fixed. The estimated film thickness Th is a target film thickness value, and the substrate transfer speed V is determined by using the substrate transfer speed V as a variable.
此調諧部36之程式於對基板G進行塗布處理之程序中實行，藉此，控制部10可獲得每經過時間Ts必要之基板輸送速度V。 The program of the tuner unit 36 is executed in a process of applying the substrate G, whereby the control unit 10 can obtain the substrate transport speed V necessary for each elapsed time Ts.
亦即，控制部10控制輸送驅動部8，俾以所獲得之基板輸送速度輸送基板G，藉此可使實際膜厚為作為目標之膜厚值。 That is, the control unit 10 controls the transport driving unit 8 to transport the substrate G at the obtained substrate transport speed, whereby the actual film thickness can be made the target film thickness value.
接著，使用圖6之流程圖說明關於該模擬程式P中參數鑑別部35之動作，亦即鑑別配方固有參數之程序。 Next, the procedure of the parameter discriminating section 35 in the simulation program P, that is, the procedure for identifying the inherent parameters of the recipe, will be described using the flowchart of FIG.
光阻塗布單元1中，作為其準備程序，藉由如上述實行參數鑑別部35，進行鑑別對應配方決定之固有參數(初期持入光阻量B0、基板附著係數μ)之作業。此程序中，至少對1片玻璃基板G進行光阻液R之塗布處理，藉此可鑑別該參數。 In the photoresist coating unit 1, as the preparation program, the parameter discriminating unit 35 performs the operation of discriminating the inherent parameters (initial holding photoresist amount B 0 and substrate adhesion coefficient μ) determined by the corresponding recipe. In this procedure, at least one glass substrate G is subjected to a coating process of the photoresist R, whereby the parameter can be identified.
亦即首先，設定既定噴吐壓力P及既定基板輸送速度V，對1片基板G實行光阻液R之塗布處理(圖6之步驟S1)。 In other words, the predetermined ejection pressure P and the predetermined substrate transport speed V are set, and the coating process of the photoresist R is performed on one substrate G (step S1 in FIG. 6).
藉由此塗布處理，於控制部10收集噴吐壓力P與基板輸送速度V每一時間Ts之反饋資料(圖6之步驟S2)。且於控制部10輸入在基板上形成之光阻膜膜厚(作為實際膜厚)。 By the coating process, the control unit 10 collects feedback data for each time Ts of the ejection pressure P and the substrate conveyance speed V (step S2 of FIG. 6). The thickness of the photoresist film formed on the substrate (as the actual film thickness) is input to the control unit 10.
控制部10設定既定假設值為該式(2b)中，2個配方固有參數(初期持入光阻量B0、基板附著係數μ)，並作為其他參數，設定該流量/壓力轉換係數α、噴嘴噴吐口11a之寬度尺寸L、時間Ts之值。又，根據該所收集之噴吐壓力P與基板輸送速度V計算每一時間Ts之珠粒量Bn(圖6之步驟S3)。 The control unit 10 sets a predetermined hypothesis value as two formula-specific parameters (initial holding photoresist amount B 0 and substrate adhesion coefficient μ) in the equation (2b), and sets the flow rate/pressure conversion coefficient α as another parameter. The value of the width dimension L and the time Ts of the nozzle discharge port 11a. Further, the amount of beads B n per time Ts is calculated based on the collected discharge pressure P and the substrate conveyance speed V (step S3 of Fig. 6).
計算珠粒量Bn後，控制部10即設定該式(1b)中，在基板上光阻液R乾燥固化分之濃度β、該珠粒量Bn、噴嘴噴吐口11a之寬度尺寸L與時間Ts之值，根據該所收集之噴吐壓力P與基板輸送速度V計算每一時間Ts之推定膜厚Th(圖6之步驟S4)。 After calculating the bead amount B n , the control unit 10 sets the concentration β of the drying resist of the photoresist R on the substrate, the bead amount B n , and the width dimension L of the nozzle ejection opening 11 a in the formula (1b). The value of the time Ts is calculated based on the collected discharge pressure P and the substrate conveyance speed V by the estimated film thickness Th per time Ts (step S4 of Fig. 6).
接著，比較在基板上塗布之光阻膜實際膜厚，與於步驟S4所計算之推定膜厚Th(圖6之步驟S5)，不一致時分別以既定變動幅變更該配方固有參數(B0、μ)之假設值(圖6之步驟S6)。又，再次計算步驟S1之推定膜厚Th，與實際膜厚比較之(圖6之步驟S5)。 Next, the actual film thickness of the photoresist film applied on the substrate is compared with the estimated film thickness Th (step S5 in FIG. 6) calculated in step S4, and the formulation inherent parameters (B 0 , The assumed value of μ) (step S6 of Fig. 6). Further, the estimated film thickness Th of the step S1 is again calculated in comparison with the actual film thickness (step S5 of Fig. 6).
如此，至實際膜厚與推定膜厚Th一致止，重複進行步驟S6與S3~S5之處理，作為配方固有參數鑑別實際膜厚與推定膜厚Th一致時設定之初期持入光阻量B0及基板附著係數μ(圖6之步驟S7)。 In this way, when the actual film thickness is equal to the estimated film thickness Th, the processes of steps S6 and S3 to S5 are repeated, and the initial holding photoresist amount B 0 which is set when the actual film thickness is equal to the estimated film thickness Th is identified as the formulation specific parameter. And the substrate adhesion coefficient μ (step S7 of Fig. 6).
又，該流程圖中，雖藉由將噴吐壓力P之值代入求取推定膜厚Th之式(1b)及求取珠粒量Bn之式(2b)進行運算，但亦可將既定流量/壓力係數α乘噴吐壓力P以求取噴吐流量Q，將該值代入式(1a)、式(2a)。 Further, in the flowchart, the calculation is performed by substituting the value of the discharge pressure P into the equation (1b) for obtaining the estimated film thickness Th and the equation (2b) for obtaining the bead amount B n , but the predetermined flow rate may be used. The pressure coefficient α is multiplied by the discharge pressure P to obtain the discharge flow rate Q, and this value is substituted into the equations (1a) and (2a).
接著，順著圖7之流程圖及圖8之狀態變遷圖(顯示針對基板G塗布處理演進之側視圖)說明關於使用該調諧部36處理之塗布處理程序。 Next, the coating process for processing using the tuner section 36 will be described along the flowchart of FIG. 7 and the state transition diagram of FIG. 8 (showing a side view for the substrate G coating process evolution).
首先，作為針對調諧部36之輸入參數(代入該式(1b)、(2b)之參數)，設定因參數鑑別部35之處理而經鑑別之初期持入光阻量B0及基板附著係數μ為配方固有參數。且作為其他參數，設定該流量/壓力轉換係數α、噴嘴噴吐口11a之寬度尺寸L、光阻固形分濃度β。且設定作為目標之膜厚值(圖7之步驟St1)。 First, as an input parameter to the tuning unit 36 (parameters substituted for the equations (1b) and (2b)), the initial holding resist amount B 0 and the substrate adhesion coefficient μ which are identified by the processing of the parameter discriminating unit 35 are set. It is an inherent parameter of the formula. Further, as another parameter, the flow rate/pressure conversion coefficient α, the width dimension L of the nozzle ejection opening 11a, and the photoresist solid concentration β are set. The target film thickness value is set (step St1 in Fig. 7).
且將基板G送入浮升平台2之基板送入部2A，藉由基板固持部7固持其四角隅後，滑件6即藉由輸送驅動部8沿導軌5順著輸送方向(X方向)移動。 And the substrate G is fed into the substrate feeding portion 2A of the floating platform 2, and after the substrate holding portion 7 holds the four corners thereof, the slider 6 is transported along the guide rail 5 in the conveying direction (X direction) by the conveying driving portion 8. mobile.
如圖8(a)所示，基板G之前端到達配備於塗布處理部2B上方之噴嘴11正下方後，即暫時停止基板輸送(圖7之步驟St2)。又，於此時點，在噴嘴11之噴吐口11a，藉由已實施之預備注給處理，呈珠粒狀形成既定量光阻液R。 As shown in Fig. 8(a), after the front end of the substrate G reaches the nozzle 11 provided above the coating processing portion 2B, the substrate conveyance is temporarily stopped (step St2 of Fig. 7). At this time, at the discharge port 11a of the nozzle 11, the predetermined amount of resist liquid R is formed in a bead shape by the preparatory injection process which has been carried out.
接著，噴嘴11藉由噴嘴昇降部13下降，該前端噴吐口11a接近基板前端面。又，藉由噴吐既定量光阻液R，光阻液R附著於基板G，如圖8(b)所示噴吐口11a與基板G上表面呈以光阻液R連接之狀態(圖7之步驟St3)。又，在此附著於噴嘴噴吐口11a之珠粒量大致等於該經設定之初期持入光阻量B0。 Next, the nozzle 11 is lowered by the nozzle raising/lowering portion 13, and the front end ejection opening 11a is close to the front end surface of the substrate. Further, by emitting a predetermined amount of the photoresist R, the photoresist R adheres to the substrate G, and as shown in FIG. 8(b), the ejection opening 11a and the upper surface of the substrate G are connected by the photoresist R (FIG. 7). Step St3). Here, the amount of beads adhering to the nozzle ejection opening 11a is substantially equal to the set initial holding resistance amount B 0 .
其次，控制部10控制輸送驅動部8，以既定初期速度開始輸送基板G，並控制泵驅動部22c，藉由既定初期壓力值自噴嘴噴吐口11a噴吐光阻液R(圖7之步驟St4)。 Next, the control unit 10 controls the transport drive unit 8 to start transporting the substrate G at a predetermined initial speed, and controls the pump drive unit 22c to eject the photoresist R from the nozzle discharge port 11a by a predetermined initial pressure value (step St4 in Fig. 7). .
在此，於控制部10，收集來自壓力感測器26噴吐壓力之反饋值P，與指示輸送驅動部8之輸送速度V之資料，藉由調諧部36之實行，計算基板輸送速度V，俾每經過時間Ts實際膜厚等於目標膜厚(圖7之步驟St5)。 Here, the control unit 10 collects the feedback value P from the pressure sensor 26 and the conveyance speed V of the conveyance drive unit 8, and calculates the substrate conveyance speed V by the operation of the tuning unit 36. The actual film thickness per time Ts is equal to the target film thickness (step St5 of Fig. 7).
具體而言，於該膜厚推定式(1b)，設定目標膜厚值為膜厚Th，以基板輸送速度V為變數。且於該式(1b)、(2b)，作為參數代入初期持入光阻量B0、基板附著係數μ、流量/壓力轉換係數α、噴嘴噴吐口11a之寬度尺寸L與光阻固形分濃度β。又，根據係每一時間Ts所取得之反饋資料之噴吐壓力P，計算必要之基板輸送速度V。 Specifically, in the film thickness estimation formula (1b), the target film thickness is set to the film thickness Th, and the substrate conveyance speed V is changed. In the equations (1b) and (2b), the initial holding amount B 0 , the substrate adhesion coefficient μ, the flow rate/pressure conversion coefficient α, the width dimension L of the nozzle ejection opening 11a, and the resistive solid concentration are substituted as parameters. β. Further, the necessary substrate transport speed V is calculated based on the ejection pressure P of the feedback data obtained at each time Ts.
求取基板輸送速度V後，控制部10即控制輸送驅動部8，如圖8(c)所示持續對基板G進行塗布處理，俾以該基板輸送速度V輸送基板(圖7之步驟St6)。在此，於塗布處理中步驟St5基板輸送速度V之計算每經過時間Ts即重複進行(圖7之步驟St7)，故於基板G塗布之光阻膜膜厚大致與目標膜厚值一致。 After the substrate transport speed V is obtained, the control unit 10 controls the transport drive unit 8, and continues to apply the substrate G as shown in FIG. 8(c), and transports the substrate at the substrate transport speed V (step St6 in FIG. 7). . Here, in the coating process, the calculation of the substrate transport speed V in the step St5 is repeated every time Ts (step St7 in FIG. 7), so that the thickness of the photoresist film applied on the substrate G substantially matches the target film thickness.
如圖8(d)所示，藉由輸送驅動部8輸送之基板G後端到達噴嘴11正下方後(圖7之步驟St8、9)，控制部10即停止基板輸送及自噴嘴噴吐口11a光阻液R之噴吐(圖7之步驟St10)。 As shown in Fig. 8(d), after the rear end of the substrate G conveyed by the transport driving unit 8 reaches the nozzle 11 directly below (steps St8 and 9 in Fig. 7), the control unit 10 stops the substrate transport and the nozzle spout 11a. The ejection of the photoresist R (step St10 of Fig. 7).
又，控制部10如圖8(e)所示藉由噴嘴昇降部13使噴嘴11上昇，結束光阻液R之塗布處理(圖7之步驟St11)。 Moreover, as shown in FIG. 8(e), the control unit 10 raises the nozzle 11 by the nozzle raising/lowering part 13, and finishes the coating process of the photoresist liquid R (step St11 of FIG. 7).
如上述，按照依本發明之實施形態，於用來計算推定膜厚Th之上述膜厚推定式(1a)、(1b)，作為推定膜厚Th代入目標膜厚值，以係式中參數之基板輸送速度V為變數，藉此求取每一時間Ts必要之基板輸送速度V。 As described above, according to the embodiment of the present invention, the film thickness estimation formulas (1a) and (1b) for calculating the estimated film thickness Th are substituted into the target film thickness value as the estimated film thickness Th, and the parameters in the system are used. The substrate transport speed V is a variable, thereby obtaining the substrate transport speed V necessary for each time Ts.
亦即，於控制部10，按照該求得之基板輸送速度V控制輸送驅動部8，藉此塗布形成之實際光阻膜膜厚可與目標值大致一致。 That is, the control unit 10 controls the transport driving unit 8 in accordance with the obtained substrate transport speed V, whereby the actual thickness of the photoresist film formed by coating can substantially match the target value.
因此，無關於噴嘴噴吐口之珠粒量及來自噴嘴噴吐口噴吐壓力之變化，不取決於現場操作員之熟練度，可僅以基板相對移動速度之控制使塗布膜膜厚為所希望之膜厚。藉此，即使在噴吐壓力上升，塗布開始時亦可穩定控制膜厚，於基板形成之塗布膜有效面積(製品可利用區域)可為廣範圍。 Therefore, regardless of the amount of beads in the nozzle discharge port and the change in the discharge pressure from the nozzle discharge port, the film thickness of the coating film can be made into a desired film only by controlling the relative movement speed of the substrate, depending on the skill of the field operator. thick. Thereby, even if the discharge pressure rises, the film thickness can be stably controlled at the start of coating, and the effective area of the coating film formed on the substrate (the product usable area) can be in a wide range.
又，上述實施形態中，噴嘴11噴吐口11a之基板輸送方向位置(X方向之位置)經固定，於其下方輸送基板G，求取基板輸送速度V以控制基板輸送。 Further, in the above-described embodiment, the position of the nozzle 11 in the substrate transport direction (the position in the X direction) is fixed, and the substrate G is transported thereunder to obtain the substrate transport speed V to control the substrate transport.
然而，依本發明之塗布膜形成方法中，不由其構成限定，基板G亦可相對於噴嘴11移動。例如噴嘴11亦可相對於靜止之基板G掃描並同時進行塗布處理。此時，該實施形態中之基板輸送速度V係基板G相對移動速度V(噴嘴移動速度)即可。 However, in the method of forming a coating film according to the present invention, the substrate G can also be moved relative to the nozzle 11 without being limited thereto. For example, the nozzle 11 can also be scanned with respect to the stationary substrate G and simultaneously subjected to a coating process. In this case, the substrate conveyance speed V in the embodiment may be the relative movement speed V (nozzle movement speed) of the substrate G.
除上述實施形態外，亦可更進行下述說明之塗布膜之膜厚管理。參照圖10~圖14並同時說明之。依前述實施形態決定基板輸送速度V與噴吐壓力P之值，開始基板G之塗布處理。又，每經過時間TS即記憶於基板G塗布光阻液時之基板輸送速度V與噴吐壓力P之值(圖11之步驟Stp1)。又，自此經記憶之基板輸送速度V與噴吐壓力P之值，依前述式(1)於每一基板G位置計算於基 板G形成之塗布膜膜厚(推定膜厚)(步驟Stp2)。又，使經計算之資料曲線圖化後，即例如圖12。 In addition to the above embodiment, the film thickness management of the coating film described below can be further performed. 10 to 14 and explain at the same time. The substrate transfer rate V and the discharge pressure P are determined in accordance with the above embodiment, and the coating process of the substrate G is started. Moreover, the value of the substrate transport speed V and the discharge pressure P when the photoresist G is applied to the substrate G is stored in the elapsed time TS (step Stp1 in FIG. 11). Moreover, the value of the substrate transport speed V and the discharge pressure P which have been memorized since then is calculated based on the position of each substrate G according to the above formula (1). The thickness of the coating film formed by the sheet G (estimated film thickness) (step Stp2). Further, after the calculated data is graphed, for example, FIG.
其次，於控制部10求取圖12所示之資料與母膜厚資料之差分(步驟Stp3)。在此，所謂母膜厚係將在基板G實際形成塗布膜，塗布情況良好時塗布膜厚與基板G之位置關係加以資料化者，係例如圖13所示之資料。又，母膜厚之資料由記憶機構10a預先記憶。又，使求得之差分資料曲線圖化後，即例如圖14。 Next, the control unit 10 obtains the difference between the data shown in Fig. 12 and the master film thickness data (step Stp3). Here, the mother film thickness system is formed by actually forming a coating film on the substrate G, and when the coating condition is good, the positional relationship between the coating film thickness and the substrate G is obtained, for example, as shown in FIG. Further, the data of the mother film thickness is memorized in advance by the memory means 10a. Further, after the obtained difference data is graphed, for example, FIG.
其次，於控制部10比較前述差分資料與預先決定之判定臨限值(步驟Stp4)。又，差分資料始終小於判定臨限值時，判定實際形成於基板G之塗布膜為良品，差分資料大於判定臨限值時，判定實際形成之塗布膜為不良品(步驟Stp5)。 Next, the control unit 10 compares the difference data with a predetermined determination threshold (step Stp4). When the difference data is always smaller than the determination threshold, it is determined that the coating film actually formed on the substrate G is good, and when the difference data is larger than the determination threshold, it is determined that the coating film actually formed is a defective product (step Stp5).
且判定塗布膜為不良品時，於控制部10自動修正校正基板輸送速度V與噴吐壓力P之值(步驟Stp6)。又，下一基板G以後之塗布處理使用經校正之基板輸送速度V與噴吐壓力P之值進行(步驟Stp7)。其後，與步驟Stp1~4相同。 When it is determined that the coating film is a defective product, the control unit 10 automatically corrects the values of the corrected substrate transport speed V and the discharge pressure P (step Stp6). Moreover, the coating process after the next substrate G is performed using the value of the corrected substrate conveyance speed V and the discharge pressure P (step Stp7). Thereafter, it is the same as steps Stp1 to 4.
又，上述實施形態中，雖已以於FPD玻璃基板G塗布光抗蝕劑之情形說明，但亦可適用於塗布其他處理液時，或於其他基板例如半導體晶圓等進行塗布時。 Further, in the above embodiment, the case where the photoresist is applied to the FPD glass substrate G has been described, but it may be applied to the case where another processing liquid is applied or when it is applied to another substrate such as a semiconductor wafer or the like.
(B0、μ)‧‧‧配方固有參數 (B 0 , μ) ‧ ‧ formula inherent parameters
B0‧‧‧初期持入光阻量 B 0 ‧‧‧ initial holding resistance
Bn、Bn-1、B‧‧‧珠粒量 B n , B n-1 , B‧‧‧ beads
G‧‧‧玻璃基板(被處理基板) G‧‧‧Glass substrate (substrate to be processed)
L‧‧‧寬度尺寸 L‧‧‧Width size
n‧‧‧整數 N‧‧‧ integer
P‧‧‧噴吐壓力 P‧‧‧spray pressure
Q‧‧‧光阻液量 Q‧‧‧Photoreceptor volume
R‧‧‧光阻液(處理液) R‧‧‧Photoresist (treatment liquid)
S1~S7、St1~St11、Stp1~Stp7‧‧‧步驟 S1~S7, St1~St11, Stp1~Stp7‧‧‧ steps
Th‧‧‧推定膜厚 Th‧‧‧ Presumed film thickness
Ts‧‧‧經過時間 Ts‧‧‧ elapsed time
V‧‧‧基板輸送速度 V‧‧‧ substrate conveying speed
α‧‧‧流量/壓力係數 α‧‧‧Flow/pressure coefficient
β‧‧‧光阻濃度 ‧‧‧‧ photoresist concentration
△B‧‧‧珠粒量之差 △B‧‧‧The difference between the amount of beads
△X‧‧‧基板移動量 △X‧‧‧ substrate movement amount
μ‧‧‧基板附著係數 Μ‧‧‧substrate adhesion coefficient
1‧‧‧光阻塗布處理單元 1‧‧‧Photoresist coating processing unit
2‧‧‧浮升輸送平台 2‧‧‧Floating conveyor platform
2A‧‧‧基板送入部 2A‧‧‧Substrate feeding department
2B‧‧‧塗布處理部 2B‧‧‧ Coating Processing Department
2C‧‧‧基板送出部 2C‧‧‧Substrate delivery department
2a‧‧‧氣體噴出口 2a‧‧‧ gas outlet
2b‧‧‧氣體吸氣口 2b‧‧‧ gas suction port
3‧‧‧浮升平台 3‧‧‧Floating platform
5‧‧‧導軌 5‧‧‧rails
6、203b‧‧‧滑件 6, 203b‧‧‧Sliding parts
7‧‧‧基板固持部 7‧‧‧Substrate retention
7a‧‧‧吸附構件 7a‧‧‧Adsorption components
7b‧‧‧昇降驅動部 7b‧‧‧ Lifting and Driving Department
8‧‧‧輸送驅動部 8‧‧‧Transportation drive department
10‧‧‧控制部 10‧‧‧Control Department
10a‧‧‧記憶機構 10a‧‧‧ memory mechanism
11‧‧‧噴嘴 11‧‧‧Nozzles
11a、202a‧‧‧噴嘴噴吐口 11a, 202a‧‧‧ nozzle spout
12‧‧‧框架 12‧‧‧Frame
13‧‧‧噴嘴昇降部 13‧‧‧Nozzle lift
20‧‧‧瓶子 20‧‧‧ bottle
21‧‧‧吸入管 21‧‧‧Inhalation tube
22‧‧‧光阻泵 22‧‧‧Light resistance pump
22a‧‧‧泵本體 22a‧‧‧ pump body
22b‧‧‧柱塞 22b‧‧‧Plunger
22c‧‧‧泵驅動部 22c‧‧‧ pump drive department
23‧‧‧光阻液供給管 23‧‧‧Photoreceptor supply tube
24、25‧‧‧開合閥 24, 25‧‧‧ opening and closing valve
26‧‧‧壓力感測器 26‧‧‧ Pressure Sensor
30‧‧‧光阻液供給機構(光阻供給源) 30‧‧‧Photoresist supply mechanism (photoresist supply source)
35‧‧‧參數鑑別部 35‧‧‧Parameter Identification Department
36‧‧‧調諧部 36‧‧‧ Tuning Department
200‧‧‧光阻塗布裝置 200‧‧‧Photoresist coating device
201‧‧‧平台 201‧‧‧ platform
201a‧‧‧空氣孔 201a‧‧‧Air hole
202‧‧‧光阻供給噴嘴 202‧‧‧Photoresist supply nozzle
203‧‧‧基板輸送機構 203‧‧‧Substrate conveying mechanism
203a‧‧‧軌條 203a‧‧‧Roads
203c‧‧‧基板固持部 203c‧‧‧ substrate holding unit
203b‧‧‧移動基座 203b‧‧‧Mobile base
204‧‧‧光阻液供給源 204‧‧‧Photoresist supply source
205‧‧‧泵 205‧‧‧ pump
圖1係顯示依本發明一實施形態整體概略構成之俯視圖。 Fig. 1 is a plan view showing the overall schematic configuration of an embodiment of the present invention.
圖2係圖1之A-A箭視剖面圖。 Figure 2 is a cross-sectional view taken along line A-A of Figure 1.
圖3係顯示圖1具備之光阻供給機構構成之方塊圖。 Fig. 3 is a block diagram showing the configuration of a photoresist supply mechanism provided in Fig. 1.
圖4係顯示圖1控制部可實行之模擬程式構成之方塊圖。 Fig. 4 is a block diagram showing the construction of a simulation program executable by the control unit of Fig. 1.
圖5中圖5(a)係用來說明膜厚推定式之側視圖，圖5(b)係其俯視圖。 Fig. 5(a) is a side view for explaining a film thickness estimation formula, and Fig. 5(b) is a plan view thereof.
圖6係顯示圖4參數鑑別部動作流程之流程圖。 Fig. 6 is a flow chart showing the flow of the operation of the parameter discriminating unit of Fig. 4.
圖7係顯示包含圖4調諧部動作之塗布處理程序流程之流程圖。 Fig. 7 is a flow chart showing the flow of a coating process including the operation of the tuner section of Fig. 4.
圖8係用來說明依本發明一實施形態動作之剖面圖。 Figure 8 is a cross-sectional view for explaining the operation of an embodiment of the present invention.
圖9係用來說明習知塗布處理單元概略構成之立體圖。 Fig. 9 is a perspective view for explaining a schematic configuration of a conventional coating processing unit.
圖10係依本發明之另一實施形態之說明圖。 Figure 10 is an explanatory view showing another embodiment of the present invention.
圖11係依本發明之另一實施形態之流程圖。 Figure 11 is a flow chart showing another embodiment of the present invention.
圖12係顯示依本發明之另一實施形態中膜厚與塗布位置關係之曲線圖。 Fig. 12 is a graph showing the relationship between the film thickness and the coating position in another embodiment of the present invention.
圖13係顯示依本發明之另一實施形態中推定膜厚與塗布位置關係之曲線圖。 Fig. 13 is a graph showing the relationship between the estimated film thickness and the application position in another embodiment of the present invention.
圖14係顯示依本發明之另一實施形態中母膜厚與塗布位置關係之曲線圖。 Figure 14 is a graph showing the relationship between the thickness of the mother film and the application position in another embodiment of the present invention.
St1~St11‧‧‧步驟 St1~St11‧‧‧Steps
Claims (6)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011058551 | 2011-03-16 | ||
| JP2012050125A JP5357289B2 (en) | 2011-03-16 | 2012-03-07 | Coating film forming method, coating film forming apparatus, and storage medium |
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| TW201302319A true TW201302319A (en) | 2013-01-16 |
| TWI507250B TWI507250B (en) | 2015-11-11 |
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| JP2014087774A (en) * | 2012-10-31 | 2014-05-15 | Toray Eng Co Ltd | Stripe coating method and stripe coating equipment |
| JP6261406B2 (en) * | 2014-03-20 | 2018-01-17 | 日立造船株式会社 | Welding apparatus and welding method |
| JP6417999B2 (en) * | 2015-02-19 | 2018-11-07 | 東京エレクトロン株式会社 | Treatment liquid supply apparatus, treatment liquid supply method, and storage medium |
| US20230073912A1 (en) * | 2020-05-08 | 2023-03-09 | Fanuc Corporation | Simulator |
| WO2022209197A1 (en) * | 2021-03-31 | 2022-10-06 | 東京エレクトロン株式会社 | Coating processing device, coating processing method, and coating processing program |
| JP7454006B2 (en) | 2022-02-22 | 2024-03-21 | 株式会社Ｓｃｒｅｅｎホールディングス | Control parameter adjustment method, program and recording medium |
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| JP2000126664A (en) * | 1998-10-22 | 2000-05-09 | Hirata Corp | Slit coat type coating device and slit coat type coating method |
| JP4166465B2 (en) * | 2001-12-14 | 2008-10-15 | 三菱化学株式会社 | Coating apparatus, coating method, and coated substrate manufacturing method |
| KR100566840B1 (en) * | 2002-01-30 | 2006-04-03 | 가부시끼가이샤 도시바 | Film forming method and film forming apparatus |
| JP5061421B2 (en) * | 2004-03-24 | 2012-10-31 | 東レ株式会社 | Coating method and manufacturing method of display member |
| JP2005329306A (en) * | 2004-05-19 | 2005-12-02 | Tokyo Electron Ltd | Coating film formation apparatus and coating film formation method |
| JP4516034B2 (en) * | 2006-02-03 | 2010-08-04 | 東京エレクトロン株式会社 | Coating method, coating apparatus, and coating program |
| JP5256345B2 (en) * | 2009-06-19 | 2013-08-07 | タツモ株式会社 | Substrate coating device |
| JP5108909B2 (en) * | 2010-03-12 | 2012-12-26 | 東京エレクトロン株式会社 | Backside foreign matter detection method, backside foreign matter detection device, and coating device |
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Also Published As
| Publication number | Publication date |
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| JP5357289B2 (en) | 2013-12-04 |
| TWI507250B (en) | 2015-11-11 |
| JP2012206114A (en) | 2012-10-25 |
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