201250900 六、發明說明： 【發明所屬之技術領域】 本發明，係關於接合基板彼此之接合裝置、接合系統 、接合方法、程式及電腦記憶媒體。 【先前技術】 近年來’半導體裝置朝向筒集積化發展。在水平面內 配置高集積化的複數半導體裝置，以配線接續這些半導體 裝置而製品化的場合，配線長度增加，因此使配線的電阻 變大，此外還有配線延遲變大的疑慮。 爲此，提出了使用把半導體裝置3次元地層積之3次 元集積技術。於此3次元集積技術，例如使用貼合裝置， 進行2枚半導體晶圓（以下，簡稱「晶圓」）之接合。例 如貼合裝置，具有：以把2枚晶圓配置爲上下的狀態（以 下，把上側的晶圓稱爲「上晶圓」，把下側的晶圓稱爲「 下晶圓」）予以收容的真空室、及設於真空室內，按壓上 晶圓的中心部分之押動栓、以及支撐上晶圓的外周，同時 可由該上晶圓的外周退開的間隔件。此外，押動栓，被組 入以彈簧機構進行動作，以加重機構進行升降的加重賦予 裝置內。亦即，加重賦予裝置具有單動式之汽缸構造，藉 由相關構造按壓上晶圓之中心部分。使用以上的貼合裝置 的場合，爲了抑制產生晶圓間的空孔，使真空室內成爲真 空氛圍而進行晶圓彼此的接合。具體而言，首先，在以間 隔件支撐上晶圓的狀態，藉由押動栓按壓上晶圓的中心部 -5- 201250900 分，使該中心部分抵接於下晶圓。此後，使支撐上晶圓的 間隔件退開，使上晶圓的全面抵接於下晶圓的全面而貼合 (專利文獻1 )。 〔先前技術文獻〕 〔專利文獻〕 [專利文獻1]日本特開2004-207436號公報 【發明內容】 〔發明所欲解決之課題〕 然而，使用記載於專利文獻1的貼合裝置的場合，加 重賦予裝置係以單動式汽缸構造按壓上晶圆的中心部分， 進行押動栓的移動之控制，進行施加於上晶圓的中心部分 的荷重的控制。如此般加重賦予裝置控制移動與荷重雙方 ，所以無法進行嚴密的荷重控制。如此一來，例如在按壓 上晶圓的中心部分時之荷重比所要的荷重更大的場合，會 有晶圓破損，製品的生產率降低之虞。此外，例如在按壓 上晶圓的中心部分時之荷重比所要的荷重更小的場合，會 有產生晶圆彼此的接合不良之虞。 本發明係有鑑於相關問題點而完成之發明，目的在於 適切地控制按壓基板時之荷重，適切地進行基板彼此的接 合。 〔供解決課題之手段〕 爲了達成前述目的，本發明係接合基板彼此的接合裝 -6- 201250900 置，特徵爲具有：於下面吸附保持第1基板的第1保持構 件，設於前述第1保持構件的下方，於上面載置而保持第 2基板的第2保持構件，以及設於前述第1保持構件，按 壓第1機板的中心部之押動構件；前述押動構件，具有與 第1基板的中心部抵接而控制施加於該第1基板的中心部 的荷重之致動器部，以及使該致動器部移動於鉛直方向的 汽缸部。 根據其他觀點之本發明，係具備前述接合裝置的接合 系統；具備：備有前述接合裝置的處理站，分別可以保有 複數之第1基板、第2基板或第1基板與第2基板被接合 之重合基板，且對前述處理站搬出搬入第1基板、第2基 板或重合基板的搬出搬入站；前述處理站，具有：改質第 1基板或第2基板之被接合的表面的表面改質裝置，使以 前述表面改質裝置改質的第1基板或第2基板的表面親水 化的表面親水化裝置，以及供對前述表面改質裝置、前述 表面親水化裝置及前述接合裝置，搬送第1基板、第2基 板或重合基板之用的搬送區域；在前述接合裝置，接合以 前述表面親水化裝置使表面被親水化之第1基板與第2基 板。 此外，根據其他觀點之本發明，係使用接合裝置接合 基板彼此之接合方法，特徵爲：前述接合裝置，具有於下 面吸附保持第1基板的第1保持構件，設於前述第1保持 構件的下方，於上面載置而保持第2基板的第2保持構件 ，以及設於前述第1保持構件，按壓前述第1基板的中心 201250900 部之押動構件；前述押動構件，具有與 抵接而控制施加於該第1基板的中心部 ，及使前述致動器部移動於鉛直方向的 方法，具有：將被保持於前述第1保持 與被保持於前述第2保持構件的第2基 向配置的配置步驟，及其後，藉由前述 器部移動於鉛直方向使該致動器部抵接 部，藉由前述致動器部控制對第1基板 重，按壓第1基板的中心部與第2基板 驟，其後，在第1基板的中心部與第2 壓的狀態，由第1基板的中心部朝向外 1基板與第2基板的接合步驟。 進而根據其他觀點之本發明，提供 讀取的電腦記憶媒體。 〔發明之效果〕 根據本發明，可以適切地控制按壓 切地進行基板彼此的接合。 【實施方式】 以下，針對本發明之實施型態進行 相關於本實施型態之接合系統1的構成 2係顯示接合系統1的內部構成的槪略；; 在接合系統1，如圖3所示例如接 第1基板的中心部 的荷重之致動器部 汽缸部；前述接合 構件的第1基板， 板以特定的間隔對 汽缸部使前述致動 於第1基板的中心 的中心部施加的荷 的中心部之押壓步 基板的中心部被按 周部，依序接合第 容納前述程式之可 基板時之荷重，適 說明》圖1係顯示 槪略之平面圖。圖 匕側面圖。 合作爲2枚基板之 201250900 晶圓WU、WL。以下，把被配置於上側的晶圓稱爲作爲第 1基板之「上晶圓WU」，把被配置於下側的晶圓稱爲作 爲第2基板之「下晶圓WL」。此外，把上晶圓Wu被接合 的接合面稱爲「表面Wu,」，將與該表面Ww相反側的面 稱爲「背面WU2」。同樣地，把下晶圓Wl被接合的接合 面稱爲「表面WL1」，將與該表面WLI相反側的面稱爲「 背面WL2」。接著，在接合系統1，接合上晶圓Wu與下 晶圓WL，形成作爲重合基板之重合晶圓WT。 接合系統1，具有如圖1所示例如在與外部之間分別 可以收容複數晶圓Wu、WL、複數重合晶圓WT之卡匣Cu 、CL、CT被搬出搬入的搬出搬入站2，以及具備對晶圓 Wu、WL、重合晶圓WT施以特定的處理的各種處理裝置之 處理站3 —體地連接之構成。 於搬出搬入站2，設有卡匣載置台1〇。於卡匣載置台 】〇，設有複數，例如4個卡匣載置板11。卡匣載置板11 ，於水平方向之X方向（圖1中的上下方向）排列配置爲 一列。於這些卡匣載置板11，對接合系統1的外部搬出搬 入卡匣Cu、CL、CT時，可以載置著卡匣Cu、CL、CT。如 此般，搬出般入站2，以可保有複數上晶圓，WlJ、複數下 晶圓WL、複數重合晶圓WT的方式被構成。又，卡匣載置 板11的個數’不限定於本實施型態，可以任意地決定。 此外，將卡匣之一作爲異常晶圓的回收用來使用亦可。亦 即’係可以使因種種原因而在上晶圓w U與下晶圓W L的 接合產生異常的晶圓’與其他正常的重合晶圓WT分離之 -9- 201250900 卡匣。於本實施型態，複數卡匣cT之中，把1個卡匣cT 作爲異常晶圓的回收用，其他卡匣cT作爲正常的重合晶 圓wT之收容用來使用。 於搬出搬入站2，鄰接於卡匣載置台1〇設有晶圓搬送 部2〇。於晶圓搬送部20，設有在延伸於X方向的搬送路 徑21上自由移動的晶圆搬送裝置22。晶圓搬送裝置22， 在鉛直方向及鉛直軸周圍（Θ方向）亦可自由移動，可在 各卡匣載置板11上的卡匣Cu、CL、CT、與後述之處理站 3的第3處理區塊G3之轉移裝置50、51之間搬送晶圓 Wu、WL、重合晶圓WT。 於處理站3，設有具備箇中裝置的複數例如3個處理 區塊G1、G2、G3。例如在處理站3的正面側（圖1之X 方向負方向側），設有第1處理區塊G1，於處理站3之 背面側（圖1之X方向正方向側），設有第2處理區塊 G2。此外，於處理站3的搬出搬入站2側（圖1之Y方 向負方向側），設有第3處理區塊G3。 例如，於第1處理區塊G1，被配置改質晶圓Wu、 的表面WU1、…^的表面改質裝置30。 例如，於第2處理區塊G2，例如藉由純水使晶圓Wu 、的表面Wm ' WLI親水化同時洗淨該表面WU1、WLI 的表面親水化裝置40、接合晶圓Wu、WL的接合裝置41 ，由搬出搬入站2側依此順序在水平方向之Y方向上排列 配置。 例如’於第3處理區塊G3，如圖2所不晶圓Wu、Wl -10- 201250900 、重合晶圓WT之轉移裝置50、51由下依順序設爲2段。 如圖1所示在第1處理區塊G1〜第3處理區塊G3所 包圍的區域，被形成晶圓搬送區域60。於晶圓搬送區域 60，例如被配置著晶圓搬送裝置61。 晶圓搬送裝置61，具有例如可在鉛直方向、水平方向 (Y方向、X方向）及鉛直軸周圍自由移動的搬送臂。晶 圓搬送裝置6 1，可以移動於晶圓搬送區域60內，將晶圓 WU、WL、重合晶圓WT搬送至周圍的第1處理區塊G1、 第2處理區塊G2及第3處理區塊G3內的特定裝置。 其次，說明前述之表面改質裝置30之構成。表面改 質裝置30，如圖4所示具有可以使內部密閉的處理容器 70。在處理容器70的晶圓搬送區域60側的側面，被形成 晶圓Wu、WL的搬出搬入口 71，於該搬出搬入口 71設有 閘閥72。 處理容器70的內部，設有供載置晶圓Wu、WL之用 的下部電極8 0。下部電極8 0，例如以鋁等導電性材料構 成。於下部電極80的下方，設有具備例如馬達等的驅動 部81。藉由此驅動部81，下部電極80可自由升降。 於下部電極80的內部，設有熱媒循環流路82。於熱 媒循環流路82，藉由調溫手段（未圖示）調節爲適當溫度 的熱媒透過熱媒導入管83被導入。由熱媒導入管83導入 的熱媒循環於熱媒循環流路82內，藉此，下部電極8〇被 調節爲所要的溫度。接著，下部電極80的熱，被傳達至 載置於下部電極80的上面之晶圓Wu、WL，晶圓Wu、 -11 - 201250900 被調節爲所要的溫度。 又，調節下部電極80的溫度的溫度調節機構’ 定於熱媒循環流路82，可以使用冷卻套、加熱器等其 構。 下部電極80的上部，被構成爲靜電吸附晶圓Wu 之用的靜電晶圓座（chuck) 90。靜電晶圓座90，具 如在由聚醯亞胺樹脂等髙分子絕緣材料所構成的2枚 91、92之間，配置例如銅箔等導電膜93之構造。導 93，中介著配線94、線圈等濾波器95被連接於高壓 96。於電漿處理時，由高壓電源96，被設定爲任意的 電壓之高電壓，以濾波器95濾掉高頻波，施加於導 93。如此進行藉由被施加於導電膜93的高電壓所產 庫倫力，在下部電極80的上面（靜電晶圓座90的上 靜電吸附晶圓Wu、Wl。 於下部電極80的上面，設有朝向晶圓Wu、Wl 面供給傳熱氣體之複數傳熱氣體供給孔100。如圖5 複數之傳熱氣體供給孔100，於下部電極80的上面， 地配置爲複數個同心圓狀》 於各傳熱氣體供給孔1〇〇，如圖4所示被連接著 氣體供給管101。傳熱氣體供給管101連通至氣體供 (未圖示），氦等傳熱氣體由該氣體供給源，供給至 成於下部儷極80的上面與晶圓Wu、WL的背面WU2、 之間的微小空間。藉此，由下部電極8 0的上面有效 使熱傳達至晶圓Wu、Wl。 不限 他機 ' WL 有例 薄膜 電膜 電源 直流 電膜 生的 面） 的背 所示 均勻 傳熱 給源 被形 W L2 率地 -12- 201250900 又，熱被效率充分佳地傳達至晶圓Wu、WL 亦可省略傳熱氣體供給孔1 00與傳熱氣體供給管 於下部電極80的上面周圍，以包圍被載置 極80的上面的晶圓WU、WL的外周的方式，被 狀的聚焦環102。聚焦環102，由不會拉近反應 絕緣性或導電性材料所構成，以僅使反應性離子 射入內側的晶圓Wu、的方式發揮作用。 在下部電極80與處理容器70的內壁之間， 有複數擋板孔（baffle hole )的排氣環103。藉 103,使處理容器70內的氛圍由處理容器70內 氣。 於下部電極80的下面，被連接著由成形爲 體所構成的供電棒104。於供電棒104，透過例 電容器等所構成的整合器105，被連接著第1 106。於電漿處理時，由第1高頻電源106 13.5 6MHz的高頻電壓，施加於下部電極80。 於下部電極80的上方，被配置上部電極110 極80的上面與上部電極110的下面，以相互平 ，隔著特定的間隔對向配置。下部電極80的上 電極110的下面之間隔，藉由驅動部81來調節。 於上部電極110，透過例如由阻隔電容器等 整合器111，被連接著第2高頻電源112。於電 ，由第2高頻電源1 12，使例如100MHz的高頻 加於上部電極1 1 0。如此，藉由從第1高頻電源 的場合， 101 ° 於下部電 配置有環 性離子的 有效果地 被配置設 此排氣環 均勻地排 中空的導 如由阻隔 高頻電源 ，使例如 。下部電 行的方式 面與上部 所構成的 漿處理時 電壓，施 106與第 -13- 201250900 2高頻電源112對下部電極80與上部電極110施力口 壓，於處理容器70內部產生電漿》 又，對靜電晶圓座90的導電膜93施加高電壓 電源96、對下部電極80施加高頻電壓的第1高 106，及對上部電極110施加高頻電壓的第2高頻霄 ，藉由後述之控制部3 0 0控制。 於上部電極110的內部形成中空部120。於 120，被連接著氣體供給管121»氣體供給管121， 內部貯留處理氣體的氣體供給源122。此外，於氣 管121，設有包含控制處理氣體的流動之閥與流量 等的供給機器群1 23 »接著，由氣體供給源1 22供 理氣體，以供給機器群1 23進行流量控制，透過氣 管121，被導入上部電極110的中空部120。又， 體，例如使用氧氣、氮氣、氬氣等。 於中空部120的內部，設有供促進處理氣體的 散之用的擋板124。於擋板124，設有多數小孔。 電極110的下面，被形成由中空部120往處理容器 內部噴出處理氣體之多數的氣體噴出口 125。 於處理容器70的下方，被形成吸氣口 130。於 130，被連接著連通至使處理容器70的內部氛圍減 定真空度之真空泵131之吸氣管132。 又，於下部電極80的下方，設有由下方支撐 圓Wu、WL之用的升降栓（未圖示）。升降栓插通 於下部電極80的貫通孔（未圖示），成爲可由下 高頻電 的高壓 頻電源 源1 1 2 中空部 連通於 體供給 調節部 給的處 體供給 處理氣 均勻擴 於上部 70的 吸氣口 壓至特 升降晶 被形成 部電極 -14- 201250900 80的上面突出。 其次’說明前述之表面親水化裝置40之構成。表面 親水化裝置40 ’如圖6所示具有可以使內部密閉的處理容 器1 5 0。在處理容器1 5 0的晶圓搬送區域6 0側的側面，如 圖7所示被形成晶圓Wu、WL的搬出搬入口 151，於該搬 出搬入口 151設有開閉快門152。 於處理容器150內的中央部，如圖6所示設有保持晶 圓Wu、WL而使其旋轉的旋轉晶圓座160。旋轉晶圓座 160，具有水平的上面’於該上面，設有例如抽吸著晶圓 Wu、WL的抽吸□(未圖示）。藉由從此抽吸口之抽吸， 使晶圓Wu、可以吸附保持於旋轉晶圓座160上。 旋轉晶圓座1 60，例如具有具備馬達等的晶圓座驅動 部161，可藉由該晶圓座驅動部161以特定的速度旋轉。 此外，於晶圓座驅動部161，設有例如汽缸等之升降驅動 源，旋轉晶圓座160成爲可自由升降。又，後述之杯162 成爲可自由升降亦可。 於旋轉晶圓座160的周圍，爲了承接由晶圓Wu、 飛散或落下的液體，設有進行回收的杯162。於杯162的 下面，被連接著排出回收的液體之排出管163，與真空抽 吸杯1 62內的氛圍而進行排氣的排氣管1 64。 如圖7所示於杯162的X方向負方向（圖7之下方向 )側，被形成沿著Y方向（圖7之左右方向）延伸的軌道 170。軌道170，例如由杯162的Y方向負方向（圖7的 左方向）側的外方起形成至Y方向正方向（圖7的右方向 -15- 201250900 )側的外方爲止。於軌道1 7 0，例如被安裝著噴嘴臂1 7 1 與擦洗臂172。 於噴嘴臂171，如圖6及圖7所示被支撐著對晶圓 Wu、WL供給純水之純水噴嘴173。噴嘴臂171，藉由圖7 所示之噴嘴驅動部174，可以自由移動於軌道17〇上。藉 此’純水噴嘴173，可以由被設置在杯162的Y方向正方 向側的外方之等待部175移動至杯162內的晶圓、WL 的中心部上方爲止，進而，可以在被處理晶圓W的直徑 方向移動於該晶圓WU、WL上。此外，噴嘴臂171，藉由 噴嘴驅動部174而自由升降，可以調節純水噴嘴173的髙 度。 於純水噴嘴173，如圖6所示被連接著對該純水噴嘴 173供給純水的供給管176。供給管176，連通著於內部貯 留純水的純水供給源177。此外，於供給管176，設有包 含控制純水的流動之閥與流量調節部等的供給機器群1 78 〇 於擦洗臂172，被連接著擦洗洗淨工具180。擦洗洗 淨工具1 80的先端部，例如設有複數絲狀或海綿狀的刷 180a。擦洗臂172，藉由圖7所示的洗淨工具驅動部181 而自由地移動於軌道170上，可以將擦洗洗淨工具180, 由杯1 62的Y方向負方向側的外側移動至杯丨62內的晶圓 Wu、WL的中心部上方。此外，擦洗臂172，藉由洗淨工 具驅動部171而自由升降，可以調節擦洗洗淨工具180的 高度。又，擦洗洗淨工具180不限於本實施型態，例如亦 -16- 201250900 可爲2流體噴霧噴嘴或進行兆頻超音波（megasonic)洗 淨的治具。 又，在以上的構成，純水噴嘴173與擦洗洗淨工具 180是被支撐於分別之臂，但被支撐於相同之臂亦可。此 外，省略純水噴嘴173,而由擦洗洗淨工具180供給純水 亦可。進而，省略杯162，而連接於處理容器150的底面 排出液體的排出管，與排氣處理容器150內的氛圍之排氣 管亦可。此外，於以上構成的表面親水化裝置40，設有防 帶電用的靜電去除器（未圖示）亦可。 其次，說明前述之接合裝置41之構成。接合裝置41 ，如圖8所示具有可以使內部密閉的處理容器190。在處 理容器1 90的晶圓搬送區域60側的側面，被形成晶圓Wu 、WL、重合晶圓WT的搬出搬入口 191，於該搬出搬入口 1 9 1 1設有開閉快門1 9 2。 處理容器190的內部，藉由內壁193被區劃爲搬送區 域T1與處理區域T2。前述搬出搬入口 191，被形成於搬 送區域T1之處理容器190的側面。此外，於內壁193， 也被形成晶圓Wu、Wl、重合晶圓WT的搬出搬入口 194。 於搬送區域T1的X方向政方向側，設有暫時載置晶 圓Wu、WL、重合晶圓WT之轉移部（transition) 200。轉 移部200，例如被形成爲2段，可以同時載置晶圓Wu、 WL、重合晶圓WT之任二個。 於搬送區域T1，設有在延伸於X方向的搬送路徑201 上自由移動的晶圓搬送體202。晶圓搬送體202，如圖8 -17- 201250900 及圖9所示可於鉛直方向及鉛直軸周圍自由移動，在搬送 區域T1、或者搬送區域T1與處理區域T2之間搬送晶圓 wu、WL、重合晶圓Wt。 於搬送區域T1的X方向負方向側，設有調節晶圓Wu 、WL的水平方向之朝向的位置調節機構210。位置調節機 構210，如圖10所示具有基台211'吸附保持晶圆Wu、 Wl而使其旋轉的保持部212、檢測出晶圓Wu、Wl的缺口 部的位置之檢測部2 1 3。接著，在位置調節機構2 1 0，使 被吸附保持於保持部2 1 2的晶圓Wu、旋轉同時以檢測 部213檢測出晶圓Wu、WL的缺口（ notch )部的位置，調 節該缺口部的位置以調節晶圓Wu、Wl的水平方向的朝向 〇 此外，在搬送區域T1，設有移動於該搬送區域T1與 處理區域T2之間，且使上晶圓Wu的表背面反轉的反轉 機構220。反轉機構220，如圖1 1所示具有保持上晶圓 WU之保持臂221。於保持臂221上，設有吸附上晶圓Wu 保持水平的吸附墊222。保持臂221，被支撐於第1驅動 部22 3。藉由此第1驅動部223，保持臂221自由地繞著 水平軸反轉，而且可在水平方向上伸縮。於第1驅動部 223的下方，設有第2驅動部224。藉由此第2驅動部224 ，第1驅動部223自由地繞著鉛直軸旋轉，而且可在鉛直 方向上升降。進而，第2驅動部224，被安裝於圖8及圖 9所示的延伸於Y方向的軌道225。軌道224，由處理區 域T2延伸至搬送區域T1。藉由此第2驅動部224，反轉 -18- 201250900 機構220，可以沿著軌道225移動於位置調節機構210與 後述的上部晶圓座230之間。又，反轉機構220的構成， 不限於上述實施型態的構成，只要可以使上晶圓Wu的表 背面反轉即可。此外，反轉機構220，亦可設於處理區域 T2。進而，在晶圓搬送體202賦予反轉機構，於反轉機構 220的位置設置其他的搬送手段亦可。此外，在位置調節 機構210賦予反轉機構，於反轉機構2 20的位置設置其他 的搬送手段亦可。 於處理區域T2，如圖8及圖9所示設有做爲在下面 保持上晶圓Wu而吸附保持的第1保持構件之上部晶圓座 230，與在上面載置下晶圓WL而吸附保持的第2保持構件 之下部晶圓座231。下部晶圓座231，設於上部晶圓座230 的下方，以與上部晶圓座230對向配置的方式構成。亦即 ，被保持於上部晶圓座230的上晶圓Wu與被保持於下部 晶圓座23 1的下晶圓Wl成爲可以對向而配置。 上部晶圓座23 0，如圖9所示係由設在處理容器190 的天花板面之支撐構件232支撐。支撐構件232’支撐著 上部晶圓座23 0的上面外周部。於下部晶圓座23 1的下方 ，中介著軸桿2 3 3設有晶圓座驅動部2 3 4。藉由此晶圓座 驅動部234，下部晶圓座23 1自由升降於鉛直方向，且自 由移動於水平方向。此外，藉由晶圓座驅動部234 ’下部 晶圓座231成爲可在鉛直軸周圍自由旋轉。此外’於下部 晶圓座231的下方，設有由下方支撐升降下晶圓WL之用 的升降栓（未圖示）。升降栓插通被.形成於下部晶圓座 -19- 201250900 23 1的貫通孔（未圖示），成爲可由下部晶圓座23 1的上 面突出。 上部晶圓座23 0，如圖1 2所示係被區劃爲複數，例如 3 個區域 230a > 230b、 230c » 這些區域 230a、 230b、 230c ，如圖3所示由上部晶圓座23 0的中心部朝向外周部依序 設置。接著，區域2 3 0a於平面俯視具有圓形狀，區域 23 0b、23 0c於平面俯視具有環形形狀。於各區域23 0a、 2 30b、23 0c，如圖12所示分別獨立而設置吸附保持上晶 圓Wu之用的抽吸管240a、240b、240c。於各抽吸管240a 、240b、240c，分別被連接著不同的真空泵241a、241b、 241c。亦即，上部晶圓座230，以於各區域230a、230b、 2 3 0c分別可以設定上晶圓Wu的抽真空的方式被構成。 又，於以下，亦把前述3個區域230a、230b、230c， 分別稱爲第1區域23 0a、第2區域230b、第3區域230c 。此外，亦把抽吸管240a、240b、240c，分別稱爲第1抽 吸管240a、第2抽吸管240b、第3抽吸管240c。進而， 亦把真空泵241a、241b、241c，分別稱爲第1真空泵 241a、第2真空泵241b、第3真空泵241c。 於上部晶圓座23 0之中心部，被形成貫通於該上部晶 圓座23 0的厚度方向之貫通孔242。此上部晶圓座23 0的 中心部，對應於被吸附保持於該上部晶圓座23 0的上晶圓 Wu的中心部。接著，於貫通孔242，插通後述的押動構件 25 0之致動器部251之先端部251a。 於上部晶圓座23 0的上面，設有按壓上晶圓Wu的中 -20- 201250900 心部之押動構件250。押動構件250，具有致動器 與汽缸部252。 於致動器部251，如圖14所示設有對致動器部 給特定壓力的空氣之電動空氣調節器25 3。致動器 ，藉由從此電動空氣調節器25 3供給的空氣而對一 向產生一定的壓力，可以不管壓力的作用點的位置 壓力固定地產生。接著，藉由來自電動空氣調節器 空氣，致動器部25 1抵接於上晶圓Wu的中心部而 制施加於該上晶圓Wu的中心部之荷重。此外，致 251的先端部251a，藉由來自電動空氣調節器253 ，插通貫通孔24 2而在鉛直方向上自由升降。 致動器部251，透過氈襯254被支撐於汽缸部 汽缸部252，藉由例如內藏馬達的驅動部而使致 251可以在鉛直方向上自由移動。 如以上所述押動構件250，藉由致動器部251 重的控制，藉由汽缸部252進行致動器部251的移 制。接著，押動構件250，可以於後述之晶圓Wu、 合時，使上晶圓Wu的中心部與下晶圓WL的中心 而按壓。 於上部晶圓座230，設有攝影下晶圓WL的表 之上部攝影構件255。於上部攝影構件255’例如 角型的CCD攝影機。又，上部攝影構件255’亦可 部晶圓座231上。 下部晶圓座2 3 1，如圖1 5所示係被區劃爲複數 部251 25 1供 部251 定的方 而使該 253的 可以控 動器部 的空氣 252 〇 動器部 進行荷 動的控 WL接 部抵接 面 wL1 使用廣 設於下 ，例如 -21 - 201250900 2個區域231a、231b。這些區域231a、231b，由下部晶圓 座23 1的中心部朝向外周部依序設置。接著，區域231a 於平面俯視具有圓形狀，區域231b於平面俯視具有環形 形狀。於各區域231a、231b，如圖12所示分別獨立而設 置吸附保持下晶圓WL之用的抽吸管260a、260b。於各抽 吸管 260a、2 60b，分別被連接著不同的真空泵 261a、 261b»亦即，下部晶圓座231，以於各區域231a、231b分 別可以設定下晶圓的抽真空的方式被構成。 於下部晶圓座231的外周部，設有可防止晶圓Wu、 WL、重合晶圓WT由下部晶圓座231飛出或者滑落之止動 器構件262。止動器構件262，以其頂部至少比下部晶圓 座23 1上的重合晶圆WT位於更上方的方式延伸於鉛直方 向。此外，止動器構件262，如圖1 5所示係在下部晶圓座 2 3 1的外周部設置於複數處所，例如設於5處所。 於下部晶圓座23 1，如圖1 2所示設有攝影上晶圓Wu 的表面Wmi下部攝影構件263。於下部攝影構件263， 例如使用廣角型的CCD攝影機。又，下部攝影構件263， 亦可設於下部晶圓座231上。 於以上之接合系統1，如圖1所示，設有控制部3 00 »控制部300 ’例如爲電腦，具有程式容納部（未圖示） 。於程式容納部，被收容著控制接合系統1之晶圓Wu、 WL、重合晶圓WT的處理之程式。此外，於程式容納部， 也收容著供控制前述各種處理裝置或搬送裝置等的驅動系 的動作，實現接合系統1之後述的晶圆接合處理之用的程 -22- 201250900 式。又’前述程式，係被記錄於例如電腦可讀取的硬碟（ HD)、軟碟（FD)、光碟（CD)、光磁碟（MO)、記憶 卡等電腦可讀取的記憶媒體Η者，亦可以是由該記憶媒體 Η對控制部300安裝者。 其次，說明使用如以上所述構成的接合系統1而進行 的晶圓w u、W L之接合處理方法。圖1 6係顯示相關的晶 圓接合處理的主要步驟之流程圖。 首先，收容了複數枚上晶圓Wu的卡匣Cu、收容了複 數枚下晶圓WL的卡匣CL、及空的卡匣CT，被載置於搬出 搬入站2之特定的卡匣載置板11。其後，藉由晶圓搬送裝 置22取出卡匣；Cu內的上晶圓Wu，搬送至處理站3的第 3處理區塊G3之轉移裝置50。 其次’上晶圓Wu藉由晶圓搬送裝置61搬送至第1處 理區塊G1之表面改質裝置30。被搬入表面改質裝置30 的上晶圓Wu由晶圓搬送裝置61遞送載置於下部電極80 的上面。其後，晶圓搬送裝置61由表面改質裝置30退出 ，閘閥72被關閉。 其後’使真空泵131動作，透過吸氣口處理容器70 的內部的氛圍被減壓至特定的真空度，例如6.7P a〜 66.7Pa(50mTorr〜500mTorr)。接著，如後述般在處理 上晶圓Wu中’處理容器70內的氛圍維持於前述特定的真 空度。 此外，由高壓電源96對靜電晶圓座90之導電膜93, 施加例如被設定爲2500V的直流電壓之高電壓。如此進行 -23- 201250900 藉由被施加於靜電晶圓座90的高電壓所產生的庫倫力 在下部電極80的上面靜電吸附上晶圓Wu。此外，被靜 吸附於下部電極80的上晶圓Wu，藉由熱媒循環流路 的熱媒維持於特定的溫度，例如2 0 °C〜3 0 °C。 其後，由氣體供給源122供給的處理氣體，由上部 極110的下面的氣體噴出口 125，均勻地供給至處理容 70的內部。接著，由第1高頻電源106往下部電極80 施加例如13.56MHz的高頻電壓，由第2高頻電源112 上部電極110施加例如100MHz的高頻電壓。如此一來 在上部電極110與下部電極80之間形成電場，藉由此 場使被供給至處理容器70內部的處理氣體電漿化。 藉由此處理氣體之電漿（以下，亦稱爲「處理用電 」），使下部電極80上的上晶圓Wu的表面Wm被改 ，同時除去該表面Wm上的有機物。此時，處理用電漿 的氧氣氣體之電漿主要貢獻於表面Wm上的有機物的除 。進而，氧氣氣體的電漿，亦可以促進上晶圓Wu的表 Wm的氧化，亦即促進親水化》此外，處理用電漿中的 氣氣體的電漿具有某種程度的高能量，藉由此氧氣氣體 電漿積極地（物理地）除去表面WU1上的有機物。進而 氧氣氣體的電漿，對於除去含有於處理容器70內的氛 中所含有的殘留水分亦有效果。如此進行，藉由處理用 漿，改質上晶圓Wu的表面(圖16之步驟S1 )。 其次，上晶圓Wu藉由晶圓搬送裝置61搬送至第2 理區塊G2之表面親水化裝置40。被搬入表面親水化裝 電 82 電 器 y 對 9 電 漿 質 中 去 面 氧 的 > 圍 電 處 置 -24- 201250900 40的上晶圓Wu，由晶圓搬送裝置6 1遞送至旋轉晶圓座 160而被吸附保持。 接著，藉由噴嘴臂171使等待部175的純水噴嘴173 移動到上晶圓Wu的中心部的上方，同時藉由擦洗臂1 72 使擦洗洗淨工具180移動至上晶圓Wu上。其後，藉由旋 轉晶圓座160使上晶圓Wu旋轉，同時由純水噴嘴173對 上晶圓Wu供給純水。如此一來，於上晶圓 Wu的表面 Wm附著氫氧基而該表面WU1被親水化。此外藉由來自純 水噴嘴173的純水與擦洗洗淨工具180，洗淨上晶圓Wu 的表面Wm (圖16之步驟S2)。 其次，上晶圓Wu藉由晶圓搬送裝置61搬送至第2處 理區塊G2之接合裝置41。被搬入接合裝置41的上晶圓 Wu’中介著轉移部200藉由晶圓搬送體202搬送至位置 調節機構210。接著藉由位置調節機構210，調節上晶圓 Wu的水平方向的朝向（圖16之步驟S3 )。 其後，上晶圓Wu由位置調節機構210遞送至反轉機 構220的保持臂221上。接著於搬送區域T1，藉由使保 持臂221反轉，使上晶圓Wu的表背面反轉（圖16之步驟 S4 )。亦即，上晶圓Wu的表面Wm朝向下方。又，上晶 圓Wu的表背面的反轉，在後述的反轉機構220的移動中 進行亦可。 其後’反轉機構220移動至上部晶圓座23 0側，上晶 圓Wu由反轉機構220遞送至上部晶圓座23 0。上晶圓Wu ’其背面WU2於上部晶圓座被吸附保持（圖16之步驟S5 -25- 201250900 )。此時，使所有的真空泵241a、241b、241c動作，於 上部晶圓座230之所有的區域230a、230b、230c，把上晶 圓Wu抽真空。上晶圓Wu，在上部晶圓座23 0等待直到後 述之下晶圓被搬送至接合裝置41。 於上晶圓Wu進行上述之步驟S1〜S5的處理時，接 著該上晶圓Wu進行下晶圓WL的處理。首先，藉由晶圓 搬送裝置22取出卡匣CL內的下晶圓WL，搬送至處理站3 的轉移裝置50。 其次，下晶圓Wl，藉由晶圓搬送裝置61搬送至表面 改質裝置30，使下晶圓WL的表面WL1被改質（圖16之 步驟S6 )。又，步驟S6之下晶圓WL的表面WL1的改質 ，與前述步驟S1相同。 其後，下晶圓Wl，藉由晶圓搬送裝置61搬送至表面 親水化裝置40，使下晶圓WL的表面WL1被親水化同時洗 淨該表面WL1 (圖16之步驟S7)。又，步驟S7之下晶圓 Wl的表面WL1的親水化及洗淨，與前述步驟S2相同所以 省略詳細說明》 其後，下晶圓Wl，藉由晶圓搬送裝置61搬送至接合 裝置41。被搬入接合裝置41的下晶圓WL，中介著轉移部 200藉由晶圓搬送體202搬送至位置調節機構210 »接著 藉由位置調節機構210，調節下晶圓WL的水平方向的朝 向（圖16之步驟S8)。 其後，下晶圓WL，藉由晶圓搬送體202搬送至下部 晶圓座23 1，被吸附保持於下部晶圓座2 3 1 (圖1 6之步驟 -26- 201250900 S9 )。此時，使所有的真空泵261a、261b動作，於下部 晶圓座231之所有的區域231a、231b，把下晶圓WL抽真 空。接著，以下晶圓的表面WL1朝向上方的方式，使 該下晶圓Wl的背面WL2被吸附保持於下部晶圓座231。 其次，進行被保持於上部晶圓座23 0的上晶圓Wu與 被保持於下部晶圓座231的下晶圓WL之水平方向的位置 調節。如圖17所示於下晶圓WL的表面WL1被形成預先決 定的複數，例如4點以上之基準點A，同樣地’在上晶圓 Wu的表面Wu 1被形成預先決定的複數，例如4點以上之 基準點B。做爲這些基準點A、B，例如分別使用被形成 於例如晶圓Wl、Wu上的特定的圖案。接著，使上部攝影 構件255移動於水平方向，使下晶圓WL的表面WL1被攝 影。此外，使下部攝影構件263移動於水平方向，使上晶 圓Wu的表面被攝影。此後，以使上部攝影構件255 攝影的影像上所顯示的下晶圓W L的基準點A的位置，與 下部攝影構件263攝影的影像上所顯示的上晶圓Wu的基 準點B的位置一致的方式’藉由下部晶圓座23 1調節下晶 圓Wl的水平方向的位置（包含水平方向的朝向）。亦即 ，藉由晶圓座驅動部234 ’使下部晶圓座231移動於水平 方向，使下晶圓的水平方向的位置被調節。如此進行 ，調節上晶圓1^1；與下晶圓WL的水平方向的位置（圖16 之步驟S10 )。 又，晶圓Wu、WL的水平方向的朝向，於步驟S3、 S8藉由位置調節機構210調節，但於步驟S10進行微調 -27- 201250900 節。此外，在本實施型態之步驟S 1 0，作爲基準點A、B ’使用被形成於晶圓Wl、Wu上的特定圖案，但也可以使 用其他基準點。例如可以把晶圓W l、W u的外周部與缺口 部作爲基準點使用。 其後，藉由晶圓座驅動部234，如圖1 8所示使下部晶 圓座23 1上升，使下晶圓Wl配置於特定的位置。此時， 以下晶圓Wl的表面Wli與上晶圓Wu的表面Wui之間的 間隔D成爲特定的距離，例如5 Ο μιη的方式配置下晶圓 WL。如此進行，調節上晶圓Wu與下晶圓WL的鉛直方向 的位置（圖16之步驟S11)。又，於步驟S5〜步驟S11 ’於上部晶圓座230之所有的區域230a、230b、230c，把 上晶圓Wu抽真空。同樣地，於步驟S9〜步驟S11，於下 部晶圓座231之所有的區域231a、231b，把下晶圆WL抽 真空。 此後，停止第1真空泵241 a的動作，如圖1 9所示停 止由第1區域230a之第1抽吸管240a之上晶圓Wu的抽 真空。此時，在第2區域230b與第3區域230c，上晶圓 Wu被抽真空而吸附保持著。其後，藉由押動構件250的 汽缸部252使致動器部251下降，按壓上晶圓Wu的中心 部同時使該上晶圓Wu下降。此時，藉由電動空氣調節器 25 3所供給的空氣，於致動器部251，在沒有上晶圓WU的 狀態下被施加使該押動栓25 1移動7 Ομηι的荷重，例如 2〇〇g。接著，藉由押動構件250，使上晶圓Wu的中心部 與下晶圓WL的中心部抵接而按壓（圖16之步驟S12)。 -28- 201250900 如此一來，在被按壓得上晶圓Wu的中心部與下晶圓 w L的中心部之間開始接合（圖1 9中之粗線部）。亦即， 上晶圓Wu的表面Wm與下晶圓WL的表面WL1分別於步 驟SI、S6被改質，所以首先在表面Wm、WL1之間產生 凡得瓦力，使該表面WU1、WL1彼此接合。其後，上晶圓 Wu的表面Wui與下晶圓WL的表面WLi分別於步驟S2、 S 7被親水化，所以在表面Wu!、WL1之間的親水基產生氫 鍵結合，使該表面Wm、WL1彼此堅固地被接合。 其後，如圖20所示藉由押動構件250在按壓上晶圓 W u的中心部與下晶圓W L的中心部的狀態下，停止第2真 空泵241b的動作，停止由第2區域23 0b之第2抽吸管 2 4 0b之上晶圓Wu的抽真空。如此一來，被保持於第2區 域23 0b的上晶圓Wu落下於下晶圓WL上。進而此後，停 止第3真空栗241c的動作，停止第3區域230c之由第3 抽吸管240c之上晶圓Wu的抽真空。如此由上晶圓Wu的 中心部朝向外周部，停止上晶圓Wu的抽真空，上晶圓Wu 依序落下而抵接於下晶圓Wl上。接著，上述表面WU1、 WL1間的凡得瓦力與氫鍵結合之接合，係前述結合依序擴 展。如此，如圖21所示上晶圓Wu的表面Wm與下晶圓 WL的表面WL1全面抵接，上晶圓Wu與下晶圓WL被接合 (圖1 6之步驟S 1 3 )。 其後，如圖22所示，使押動構件250上升至上部晶 圓座23 0。此外，於下部晶圓座231停止由抽吸管260a、 2 6 0b之下晶圓WL之抽真空，停止根據下部晶圓座231之 -29- 201250900 下晶圓Wi的吸附保持。 上晶圓Wu與下晶圓WL被接合的重合晶 晶圓搬送裝置61搬送至轉移裝置51，其後藉 站2的晶圓搬送裝置22被搬送至特定的卡匣_ 卡匣CT。如此，結束一連串的晶圓Wu、Wl的 根據以上之實施型態，押動構件250具 251與汽缸部252，所以於步驟S12，可以藉_ 使致動器部251移動於鉛直方向而使該致動器 於上晶圓Wu的中心部，藉由致動器部251控 晶圓Wu的中心部的荷重，而按壓上晶圓Wu 下晶圓Wl的中心部。亦即，押動構件250， 部251進行荷重的控制，藉由汽缸部252進 2 5 1的移動的控制。如此般本實施型態之押動 係以不同的機構251、252來進行荷重的控制 制，所以可嚴密地控制施加於上晶圓Wu的中 。而且，致動器部251的荷重的控制，係藉由 的壓力控制的電動空氣調節器253所供給的空 所以可更嚴密地控制施加於上晶圓Wu的中心 接著，於步驟S13，如此般可以在以適切的荷 圆W u的中心部與下晶圓Wl的中心部的狀態 圓Wu的中心部朝向外周部，依序接合上晶圓 圓W L。亦即，可以適切地進行上晶圆w u、# 的接合。結果，可以減低接合不良的製品，提 產率。 D wT，藉由 由搬出搬入 戈置板11之 接合處理。 有致動器部 I汽缸部252 部251抵接 制施加於上 的中心部與 藉由致動器 行致動器部 構件2 5 0， 與移動的控 心部之荷重 可進行嚴密 氣來進行， 部的荷重。 重按壓上晶 下，由上晶 Wu與下晶 ϊ下晶圓W l 高製品的生 -30- 201250900 又，亦可考慮押動構件例如僅有汽缸 而，汽缸構造無法進行嚴密的荷重控制， 樣，對押動構件施加例如200g這樣小的 押動構件不作動之虞。就這一點，本實施 250，在進行適切的荷重控制上是有用的 件若爲汽缸構造的話，只能控制預定値之 本實施型態之押動構件250，藉由調節來 器253的空氣的壓力，而可以控制根據致 晶圓Wu的中心部施加的荷重。亦即，根 話，可以提高荷重控制的自由度。 此外，接合裝置4 1，除了供接合晶圓 上部晶圓座23 0與下部晶圓座231以外， Wu、WL的水平方向的朝向之位置調節機 上晶圓Wu的表背面之反轉機構220，所 內效率佳地進行晶圓Wu、Wl的接合。進 ，除了接合裝置41，還具備改質晶圓Wu 、WL12表面改質裝置30，與使表面WU: 時洗淨該表面Wm、WL1之表面親水化裝i 一個系統內效率佳地進行晶圓Wu、Wl的 以使晶圓接合處理的生產性更爲提高。 在以上的實施型態，係藉由晶圓座驅: 晶圓座23 1可在鉛直方向上自由升降且可 方向，但使上部晶圓座230在鉛直方向自 在水平方向自由移動地構成亦可。此外 構造的場合。然 如本實施型態這 荷重時，會有該 型態之押動構件 。此外，押動構 荷重。這一點， 自電動空氣調節 動器部25 1對上 據本實施型態的 、WL之用的 也具備調節晶圓 構2 1 0、與反轉 以可在一個裝置 而，接合系統1 、的表面Wm ' W L |親水化同 置40，所以可在 接合。亦即，可 訪部234使下部 自由移動於水平 由升降，或者是 ，使上部晶圓座 -31 - 201250900 230與下部晶圆座231 1雙方自由地升降於鉛直方向且自由 移動於水平方向地構成亦可。 以上，參照附圖說明本發明之適切的實施型態，但是 本發明並不以相關之例爲限。如果是熟悉該項技藝者，於 申請專利範圍所記載之思想的範圍內，所能夠想到的各種 變更例或者修正例，當然也應該被瞭解爲係屬於本發明的 技術範圍內。本發明並不限於此例，可以採取種種態樣。 本發明在基板爲晶圓以外之FPD (平面面板顯示器）、光 罩用之遮罩標線等其他基板的場合也可以適用。 【圖式簡單說明】 圖1係顯示相關於本實施型態之接合系統的構成槪略 之平面圖。 圖2係顯示相關於本實施型態之接合系統的內部構成 槪略之側面圖。 圖3係顯示上晶圓與下晶圓的構成槪略之側面圖。 圖4係顯示表面改質裝置的構成槪略之縱剖面圖。 圖5係下部電極之平面圖。 圖6係顯示表面親水化裝置的構成槪略之縱剖面圖。 圖7係顯示表面親水化裝置的構成槪略之橫剖面圖。 圖8係顯示接合裝置的構成槪略之橫剖面圖。 圖9係顯示接合裝置的構成槪略之縱剖面圖。 圖1 0係顯示位置調節機構的構成槪略之側面圖。 圖1 1係顯示反轉機構的構成槪略之側面圖。 -32- 201250900 圖1 2係顯示上部晶圓座與下部晶圓座的構成槪略之 縱剖面圖。 圖13係由下方所見之上部晶圓座之平面圖。 圖14係顯示押動構件的構成槪略之立體圖。 圖15係由上方所見之下部晶圓座之平面圖。 圖1 6係顯示晶圓接合處理的主要步驟之流程圖。 圖1 7係顯示調節上晶圓與下晶圓的水平方向的位置 的模樣之說明圖。 圖1 8係顯示調節上晶圓與下晶圓的鉛直方向的位置 的模樣之說明圖。 圖1 9係顯示使上晶圓的中心部與下晶圓的中心部抵 接而按壓的模樣之說明圖。 圖20係顯示依序將上晶圓抵接於下晶圓的模樣之說 明圖。 圖21係顯示使上晶圓的表面與下晶圓的表面抵接的 模樣之說明圖。 圖22係顯示上晶圓與下晶圓被接合的模樣之說明圖 【主要元件符號說明】 1 :接合系統 2 :搬出搬入站 3 :處理站 3 〇 :表面改質裝置 -33- 201250900 40 :表面親水化裝置 41 :接合裝置 60:晶圓搬送區域 2 3 0 :上部晶圓座 231 :下部晶圓座 242 :貫通孔 2 5 0 :押動構件 251 :致動器部 2 5 1 a :先端部 252 :汽缸部 253:電動空氣調節器 3 0 0 :控制部 W u :上晶圓 WU1 :表面 W l :下晶圓 wL1 :表面 wT :重合晶圓 -34-201250900 VI. [Technical Field] The present invention relates to a bonding device, a bonding system, a bonding method, a program, and a computer memory medium for bonding substrates. [Prior Art] In recent years, semiconductor devices have progressed toward the accumulation of cylinders. When a high-integration complex semiconductor device is placed in the horizontal plane and the semiconductor device is connected to the product by wiring, the wiring length is increased, so that the resistance of the wiring is increased, and the wiring delay is increased. For this reason, a three-dimensional accumulation technique using a three-dimensional layering of a semiconductor device has been proposed. In the three-dimensional integration technique, for example, a bonding device is used to bond two semiconductor wafers (hereinafter simply referred to as "wafers"). For example, the bonding apparatus has a state in which two wafers are placed up and down (hereinafter, the upper wafer is referred to as "upper wafer" and the lower wafer is referred to as "lower wafer"). And a vacuum chamber, and a shackle that is disposed in the vacuum chamber to press the central portion of the wafer, and a spacer that supports the outer periphery of the upper wafer and is retractable by the outer circumference of the upper wafer. Further, the stopper is inserted into the spring mechanism, and the weighting mechanism is used to lift and lower the weight of the device. That is, the weight imparting device has a single-acting cylinder configuration in which the central portion of the upper wafer is pressed by the associated structure. When the above bonding apparatus is used, in order to suppress the occurrence of voids between the wafers, the vacuum chamber is brought into a vacuum atmosphere to bond the wafers. Specifically, first, in a state where the wafer is supported by the spacer, the center portion of the upper wafer is pressed by the push pin to press the center portion -5 - 201250900, and the center portion is brought into contact with the lower wafer. Thereafter, the spacer supporting the upper wafer is retracted, and the entire wafer is brought into full contact with the lower wafer to be bonded (Patent Document 1). [Prior Art] [Patent Document] [Patent Document 1] JP-A-2004-207436 SUMMARY OF INVENTION [Problem to be Solved by the Invention] However, when the bonding apparatus described in Patent Document 1 is used, the weighting is increased. The application device presses the center portion of the upper wafer in a single-acting cylinder structure, controls the movement of the urging pin, and controls the load applied to the central portion of the upper wafer. As a result, the device is controlled to control both the movement and the load, so that it is impossible to perform strict load control. In this case, for example, when the load at the center of the wafer is pressed to be larger than the required load, the wafer is broken and the productivity of the product is lowered. Further, for example, when the load at the center portion of the wafer is pressed to be smaller than the required load, there is a possibility that the wafers are not bonded to each other. The present invention has been made in view of the related problems, and an object thereof is to appropriately control the load when the substrate is pressed, and to appropriately perform the bonding of the substrates. [Means for Solving the Problems] In order to achieve the above object, the present invention is a bonding apparatus for bonding substrates, -6 to 201250900, characterized in that the first holding member that adsorbs and holds the first substrate on the lower surface is provided in the first holding a second holding member that holds the second substrate on the lower surface of the member, and a urging member that is provided on the first holding member and that presses the center portion of the first plate; the urging member has the first The center portion of the substrate is in contact with the actuator portion that controls the load applied to the center portion of the first substrate, and the actuator portion is moved to the cylinder portion in the vertical direction. According to another aspect of the invention, a bonding system including the bonding device, and a processing station including the bonding device, each of which can hold a plurality of first substrates, a second substrate, or a first substrate and a second substrate The substrate is superimposed, and the first substrate, the second substrate, or the unloading and unloading substrate are carried out to and from the processing station; and the processing station includes a surface modifying device that modifies the bonded surface of the first substrate or the second substrate a surface hydrophilization device that hydrophilizes the surface of the first substrate or the second substrate modified by the surface modification device, and the first surface modification device, the surface hydrophilization device, and the bonding device are transported first. A transfer region for the substrate, the second substrate, or the superposed substrate; and the first substrate and the second substrate having the surface hydrophilized by the surface hydrophilization device bonded to the bonding device. Further, according to another aspect of the invention, a bonding method of joining substrates by bonding means is provided, wherein the bonding apparatus has a first holding member that adsorbs and holds a first substrate on a lower surface, and is provided under the first holding member a second holding member that holds the second substrate on the upper surface, and a first holding member that presses the urging member of the center of the first substrate at 201250900; the urging member is controlled by abutment The method of moving the center portion of the first substrate and the movement of the actuator portion in the vertical direction includes holding the first holding and the second holding in the second holding member. In the arranging step, the actuator portion is moved in the vertical direction to move the actuator portion abutting portion, and the actuator portion controls the weight of the first substrate to press the center portion of the first substrate and the second portion. After the substrate is succeeded, the center portion of the first substrate faces the bonding step between the outer substrate and the second substrate in a state where the center portion of the first substrate is in the second pressure state. Further, according to the present invention, a computer memory medium for reading is provided. [Effect of the Invention] According to the present invention, it is possible to appropriately control the joining of the substrates by pressing and cutting. [Embodiment] Hereinafter, in the embodiment of the present invention, the configuration of the bonding system 1 according to the present embodiment is performed, and the internal configuration of the bonding system 1 is displayed; in the bonding system 1, as shown in FIG. For example, the actuator portion cylinder portion that receives the load of the center portion of the first substrate; and the first substrate of the bonding member, the plate applies the load applied to the center portion of the center of the first substrate to the cylinder portion at a predetermined interval. The center portion of the pressing step substrate of the center portion is joined to the peripheral portion in order to sequentially load the substrate when the substrate of the above-mentioned program is accommodated, and FIG. 1 is a plan view showing a schematic view. Figure 匕 Side view. The cooperation is for the 201250900 wafers WU and WL of two substrates. Hereinafter, the wafer disposed on the upper side is referred to as "upper wafer WU" as the first substrate, and the wafer disposed on the lower side is referred to as "lower wafer WL" as the second substrate. Further, the joint surface on which the upper wafer Wu is joined is referred to as "surface Wu", and the surface on the opposite side to the surface Ww is referred to as "back surface WU2". Similarly, the joint surface on which the lower wafer W1 is joined is referred to as "surface WL1", and the surface on the opposite side to the surface WLI is referred to as "back surface WL2". Next, in the bonding system 1, the wafer Wu and the lower wafer WL are bonded to form a superposed wafer WT as a superposed substrate. The bonding system 1 has a loading/unloading station 2 in which a plurality of wafers Wu, WL, and a plurality of wafers WT, Cu, CL, and CT are carried in and out, as shown in FIG. The processing stations 3 of the various processing devices that apply specific processing to the wafers Wu, WL, and the coincident wafer WT are integrally connected. The loading and unloading station 2 is provided with a cassette mounting table 1 . On the cassette mounting table 】, there are a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the X direction (up and down direction in Fig. 1) in the horizontal direction. When the cassette mounting plate 11 carries out the cassettes Cu, CL, and CT to the outside of the bonding system 1, the cassettes Cu, CL, and CT can be placed. As a result, the inbound station 2 is carried out so as to be able to hold a plurality of upper wafers, WlJ, a plurality of lower wafers WL, and a plurality of superposed wafers WT. Further, the number of the cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined. In addition, one of the cassettes may be used as an abnormal wafer for recycling. That is, the -9-201250900 cassette can be separated from other normal coincident wafers WT by causing the wafers which are abnormally bonded between the upper wafer w U and the lower wafer W L for various reasons. In the present embodiment, among the plurality of cassettes cT, one cassette cT is used for the recovery of the abnormal wafer, and the other cassette cT is used as the storage of the normal overlapping wafer wT. At the loading/unloading station 2, a wafer transfer unit 2 is provided adjacent to the cassette mounting table 1 . The wafer transfer unit 20 is provided with a wafer transfer device 22 that is freely movable in a transport path 21 extending in the X direction. The wafer transfer device 22 is also freely movable in the vertical direction and around the vertical axis (Θ direction), and the cassettes Cu, CL, CT on each of the cassette mounting plates 11 and the third processing station 3 to be described later The wafers Wu, WL, and the superposed wafer WT are transferred between the transfer devices 50 and 51 of the processing block G3. The processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2, and G3 having a device in the middle. For example, on the front side of the processing station 3 (the negative side in the X direction of FIG. 1), the first processing block G1 is provided, and the second processing side of the processing station 3 (the positive side in the X direction of FIG. 1) is provided with the second Processing block G2. Further, on the side of the loading/unloading station 2 of the processing station 3 (the negative side in the Y direction of Fig. 1), the third processing block G3 is provided. For example, in the first processing block G1, the surface modifying device 30 of the surfaces WU1, ... of the modified wafer Wu is disposed. For example, in the second processing block G2, for example, the surface Wm 'WLI of the wafer Wu is hydrophilized by pure water, and the surface hydrophilization device 40 of the surfaces WU1 and WLI and the bonded wafers Wu and WL are bonded. The device 41 is arranged in the Y direction in the horizontal direction in this order from the loading/unloading station 2 side. For example, in the third processing block G3, as shown in Fig. 2, the wafers Wu, Wl-10-201250900, and the transfer devices 50 and 51 of the superposed wafer WT are set to two stages in the order of the lower processing. As shown in Fig. 1, the wafer transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3. For example, the wafer transfer device 61 is disposed in the wafer transfer region 60. The wafer transfer device 61 has, for example, a transfer arm that can move freely in the vertical direction, the horizontal direction (Y direction, X direction), and the vicinity of the vertical axis. The wafer transfer device 161 can move in the wafer transfer region 60, and transport the wafers WU, WL, and the superposed wafer WT to the surrounding first processing block G1, the second processing block G2, and the third processing region. A specific device within block G3. Next, the configuration of the surface modification device 30 described above will be described. The surface modification device 30 has a processing container 70 which can seal the inside as shown in Fig. 4 . The carry-out port 71 of the wafers Wu and WL is formed on the side surface of the processing container 70 on the side of the wafer transfer region 60, and the gate valve 72 is provided in the carry-out port 71. Inside the processing container 70, a lower electrode 80 for mounting the wafers Wu and WL is provided. The lower electrode 80 is made of, for example, a conductive material such as aluminum. A drive unit 81 provided with, for example, a motor or the like is provided below the lower electrode 80. By the drive unit 81, the lower electrode 80 can be freely moved up and down. A heat medium circulation flow path 82 is provided inside the lower electrode 80. In the heat medium circulation flow path 82, the heat medium adjusted to an appropriate temperature by a temperature adjustment means (not shown) is introduced through the heat medium introduction pipe 83. The heat medium introduced from the heat medium introduction pipe 83 circulates in the heat medium circulation flow path 82, whereby the lower electrode 8A is adjusted to a desired temperature. Then, the heat of the lower electrode 80 is transmitted to the wafers Wu and WL placed on the upper surface of the lower electrode 80, and the wafers Wu, -11 - 201250900 are adjusted to a desired temperature. Further, the temperature adjustment mechanism for adjusting the temperature of the lower electrode 80 is defined in the heat medium circulation flow path 82, and a cooling jacket, a heater or the like can be used. The upper portion of the lower electrode 80 is configured as an electrostatic wafer holder 90 for electrostatically adsorbing the wafer Wu. The electrostatic wafer holder 90 has a structure in which a conductive film 93 such as a copper foil is disposed between two 91 and 92 made of a germanium molecular insulating material such as a polyimide resin. A guide 93, a filter 94 such as a wiring 94, and a coil are connected to the high voltage 96. At the time of plasma processing, the high voltage power source 96 is set to a high voltage of an arbitrary voltage, and the high frequency wave is filtered by the filter 95 to be applied to the guide 93. In this way, the Coulomb force generated by the high voltage applied to the conductive film 93 is applied to the upper surface of the lower electrode 80 (on the electrostatic wafer holder 90, the wafers Wu and W1 are electrostatically adsorbed. On the upper surface of the lower electrode 80, the orientation is provided. The plurality of heat transfer gas supply holes 100 for supplying the heat transfer gas on the wafers Wu and W1. The plurality of heat transfer gas supply holes 100 are arranged on the upper surface of the lower electrode 80 in a plurality of concentric circles. The hot gas supply hole 1 is connected to the gas supply pipe 101 as shown in Fig. 4. The heat transfer gas supply pipe 101 is connected to a gas supply (not shown), and a heat transfer gas such as helium is supplied from the gas supply source to the gas supply pipe 101. A small space formed between the upper surface of the lower drain electrode 80 and the rear surface WU2 of the wafers Wu and WL. Thereby, heat is efficiently transmitted to the wafers Wu and W1 from the upper surface of the lower electrode 80. WL has a thin film film power supply DC film surface). The heat transfer to the source is shown in the back. W L2 rate is -12- 201250900. The heat is efficiently transmitted to the wafer Wu, WL. Hot gas supply hole 1 00 and heat transfer gas supply pipe in the lower part The focus ring 102 is formed around the upper surface of the electrode 80 so as to surround the outer circumferences of the wafers WU and WL on the upper surface of the electrode 80. The focus ring 102 is composed of a material that does not close the reaction insulating or conductive material, and functions to allow only reactive ions to enter the wafer Wa on the inside. Between the lower electrode 80 and the inner wall of the processing vessel 70, there is a plurality of baffle holes of the exhaust ring 103. By 103, the atmosphere in the processing container 70 is made to flow from the inside of the processing container 70. A power supply rod 104 formed of a molded body is connected to the lower surface of the lower electrode 80. The power supply rod 104 is connected to the first 106 by an integrator 105 formed of a capacitor or the like. At the time of plasma treatment, the first high frequency power source 106 13. A high frequency voltage of 5 MHz is applied to the lower electrode 80. Above the lower electrode 80, the upper surface of the upper electrode 110 and the lower surface of the upper electrode 110 are disposed so as to be aligned with each other with a predetermined interval therebetween. The interval between the lower surfaces of the upper electrodes 110 of the lower electrode 80 is adjusted by the driving portion 81. The upper electrode 110 is connected to the second high-frequency power source 112 via, for example, an integrator 111 such as a blocking capacitor. At the second high frequency power source 12, a high frequency of, for example, 100 MHz is applied to the upper electrode 110. In this way, from the case of the first high-frequency power source, 101 ° is disposed in the lower portion, and the exhaust ring is disposed to be uniformly arranged to be uniformly hollowed out, for example, by blocking the high-frequency power source. The lower surface of the lower electrode row and the upper portion of the plasma processing voltage, the application 106 and the -13-201250900 2 high-frequency power source 112 apply pressure to the lower electrode 80 and the upper electrode 110 to generate a plasma inside the processing container 70. Further, a high voltage power source 96 is applied to the conductive film 93 of the electrostatic wafer holder 90, a first high 106 for applying a high frequency voltage to the lower electrode 80, and a second high frequency 施加 for applying a high frequency voltage to the upper electrode 110 are described later. The control unit 300 controls. A hollow portion 120 is formed inside the upper electrode 110. At 120, the gas supply pipe 121 is connected to the gas supply pipe 121, and the gas supply source 122 for storing the process gas is stored therein. Further, the gas pipe 121 is provided with a supply device group including a valve for controlling the flow of the processing gas, a flow rate, and the like. Then, the gas is supplied from the gas supply source 22, and is supplied to the machine group 1 23 for flow control, and the gas pipe is transmitted through the gas pipe. 121 is introduced into the hollow portion 120 of the upper electrode 110. Further, for the body, for example, oxygen, nitrogen, argon or the like is used. Inside the hollow portion 120, a baffle 124 for promoting the dispersion of the processing gas is provided. The baffle 124 is provided with a plurality of small holes. On the lower surface of the electrode 110, a gas discharge port 125 for ejecting a large amount of processing gas from the hollow portion 120 to the inside of the processing container is formed. Below the processing container 70, an intake port 130 is formed. At 130, the intake pipe 132 of the vacuum pump 131 that is connected to the vacuum of the internal atmosphere of the processing container 70 is connected. Further, below the lower electrode 80, a lift pin (not shown) for supporting the circles Wu and WL from below is provided. The lift pin is inserted into the through hole (not shown) of the lower electrode 80, and the high-frequency power source 1 1 2 of the lower high-frequency power is connected to the body supply regulating unit and the processing gas is uniformly expanded to the upper portion. The suction port of 70 is pressed to the upper surface of the special lift crystal forming portion electrode-14-20125090080. Next, the configuration of the surface hydrophilization device 40 described above will be described. The surface hydrophilizing device 40' has a processing container 150 that can seal the inside as shown in Fig. 6. On the side surface of the processing container 150 side of the wafer transfer area 60, the carry-out port 151 of the wafers Wu and WL is formed as shown in Fig. 7, and the opening/closing shutter 152 is provided in the carry-out port 151. In the center portion of the processing container 150, as shown in Fig. 6, a rotating wafer holder 160 that holds the crystal grains Wu, WL and rotates is provided. The wafer holder 160 is rotated, and has a horizontal upper surface on which the suction □ (not shown) for sucking the wafers Wu and WL is provided. The wafer Wu can be adsorbed and held on the rotating wafer holder 160 by suction from the suction port. The wafer holder 160 is rotated, for example, by a wafer holder driving unit 161 having a motor or the like, and is rotatable at a specific speed by the wafer holder driving unit 161. Further, the wafer holder driving unit 161 is provided with a lifting drive source such as a cylinder, and the rotating wafer holder 160 is freely movable up and down. Further, the cup 162 described later may be freely movable up and down. Around the rotating wafer holder 160, a cup 162 for recovery is provided in order to receive the liquid that is scattered, or dropped by the wafer Wu. Below the cup 162, an exhaust pipe 163 for discharging the recovered liquid and an exhaust pipe 164 for exhausting the atmosphere in the vacuum suction cup 1 62 are connected. As shown in Fig. 7, on the side of the cup 162 in the negative X direction (the direction in Fig. 7), a rail 170 extending in the Y direction (the horizontal direction in Fig. 7) is formed. The rail 170 is formed, for example, from the outside in the negative direction of the Y direction of the cup 162 (the left direction in FIG. 7) to the outside in the positive direction of the Y direction (the right direction -15 - 201250900 in FIG. 7). At the track 170, for example, the nozzle arm 177 and the scrubbing arm 172 are mounted. As shown in Figs. 6 and 7, the nozzle arm 171 is supported by a pure water nozzle 173 for supplying pure water to the wafers Wu and WL. The nozzle arm 171 is freely movable on the rail 17 by the nozzle driving portion 174 shown in FIG. The 'pure water nozzle 173' can be moved to the upper side of the wafer or WL in the cup 162 by the outer waiting portion 175 provided on the positive side in the Y direction of the cup 162, and can be processed. The wafer W is moved in the radial direction on the wafers WU and WL. Further, the nozzle arm 171 is freely movable up and down by the nozzle driving portion 174, and the temperature of the pure water nozzle 173 can be adjusted. As shown in Fig. 6, the pure water nozzle 173 is connected to a supply pipe 176 for supplying pure water to the pure water nozzle 173. The supply pipe 176 is connected to a pure water supply source 177 that internally stores pure water. Further, the supply pipe 176 is provided with a supply device group 1 78 including a valve for controlling the flow of pure water, a flow rate adjusting portion, and the like, and is connected to the scrubbing cleaning tool 180. The tip end portion of the scrubbing tool 180 is scrubbed, for example, with a plurality of filaments or sponges 180a. The scrubbing arm 172 is freely moved on the rail 170 by the cleaning tool driving unit 181 shown in Fig. 7, and the scrubbing cleaning tool 180 can be moved from the outer side in the negative direction of the Y direction of the cup 1 62 to the cup. Above the center of the wafers Wu and WL in 62. Further, the wiping arm 172 is freely moved up and down by the cleaning tool driving portion 171, and the height of the scrubbing cleaning tool 180 can be adjusted. Further, the scrubbing cleaning tool 180 is not limited to this embodiment, and for example, -16-201250900 may be a 2-fluid spray nozzle or a fixture for performing megasonic cleaning. Further, in the above configuration, the pure water nozzle 173 and the scrubbing cleaning tool 180 are supported by the respective arms, but may be supported by the same arm. Further, the pure water nozzle 173 is omitted, and the pure water may be supplied by the scrubbing cleaning tool 180. Further, the cup 162 is omitted, and the discharge pipe for discharging the liquid connected to the bottom surface of the processing container 150 and the exhaust pipe of the atmosphere in the exhaust processing container 150 may be used. Further, the surface hydrophilization device 40 having the above configuration may be provided with an electrostatic discharge preventer (not shown) for anti-charge. Next, the configuration of the above-described joining device 41 will be described. As shown in Fig. 8, the joining device 41 has a processing container 190 that can seal the inside. The wafers Wu and WL and the loading/unloading port 191 of the superposed wafer WT are formed on the side surface of the processing container 90 on the side of the wafer transfer region 60, and the opening and closing shutter 192 is provided in the loading/unloading port 1 911. The inside of the processing container 190 is partitioned by the inner wall 193 into the transport area T1 and the processing area T2. The carry-in/out port 191 is formed on the side surface of the processing container 190 of the transport area T1. Further, on the inner wall 193, the wafers Wu and W1 and the carry-in/out port 194 of the superposed wafer WT are also formed. A transition 200 in which the wafers Wu, WL and the superposed wafer WT are temporarily placed is provided on the X-direction political direction side of the transfer region T1. The transfer unit 200 is formed, for example, in two stages, and any two of the wafers Wu, WL, and the superposed wafer WT can be simultaneously placed. A wafer transport body 202 that is freely movable on a transport path 201 extending in the X direction is provided in the transport area T1. As shown in FIG. 8-17-201250900 and FIG. 9, the wafer transfer body 202 can move freely in the vertical direction and around the vertical axis, and transport the wafer wu, WL between the transfer area T1 or the transfer area T1 and the processing area T2. , coincide with the wafer Wt. A position adjustment mechanism 210 that adjusts the orientation of the wafers Wu and WL in the horizontal direction is provided on the negative side in the X direction of the transfer region T1. As shown in Fig. 10, the position adjusting mechanism 210 has a holding portion 212 in which the base 211' sucks and holds the wafers Wu and W1 and rotates, and a detecting portion 21 1 that detects the positions of the notches of the wafers Wu and W1. Then, the position adjustment mechanism 211 adjusts the position of the notch portion of the wafers Wu and WL by the detection unit 213 while the wafer Wu is adsorbed and held by the holding portion 2 1 2 and is rotated. The position of the portion is adjusted in the horizontal direction of the wafers Wu and W1, and the transfer region T1 is provided between the transfer region T1 and the process region T2, and the front and back surfaces of the upper wafer Wu are reversed. Inverting mechanism 220. The reversing mechanism 220 has a holding arm 221 that holds the upper wafer WU as shown in Fig. 11. On the holding arm 221, an adsorption pad 222 for adsorbing the upper surface of the wafer Wu is provided. The holding arm 221 is supported by the first driving portion 22 3 . By the first driving portion 223, the holding arm 221 is freely inverted about the horizontal axis, and can be expanded and contracted in the horizontal direction. A second driving unit 224 is provided below the first driving unit 223. By the second driving portion 224, the first driving portion 223 is freely rotatable about the vertical axis and can be moved up and down in the vertical direction. Further, the second drive unit 224 is attached to the rail 225 extending in the Y direction as shown in Figs. 8 and 9 . The track 224 extends from the processing area T2 to the transfer area T1. By the second driving unit 224, the -18-201250900 mechanism 220 can be moved between the position adjusting mechanism 210 and the upper wafer holder 230, which will be described later, along the rail 225. Further, the configuration of the inversion mechanism 220 is not limited to the configuration of the above-described embodiment, and the front and back surfaces of the upper wafer Wu may be reversed. Further, the reversing mechanism 220 may be provided in the processing area T2. Further, the wafer transfer body 202 is provided with a reversing mechanism, and another transfer means may be provided at the position of the reversing mechanism 220. Further, the position adjustment mechanism 210 is provided with an inversion mechanism, and another conveyance means may be provided at the position of the reversing mechanism 2 20. In the processing region T2, as shown in FIG. 8 and FIG. 9, the first holding member upper wafer holder 230 is held and held by holding the upper wafer Wu, and the lower wafer WL is placed thereon to be adsorbed. The lower holding member wafer holder 231 is held. The lower wafer holder 231 is disposed below the upper wafer holder 230 and is disposed to face the upper wafer holder 230. That is, the upper wafer Wu held by the upper wafer holder 230 and the lower wafer W1 held by the lower wafer holder 23 1 are disposed to face each other. The upper wafer holder 230 is supported by a support member 232 provided on the ceiling surface of the processing container 190 as shown in FIG. The support member 232' supports the upper outer peripheral portion of the upper wafer holder 230. Below the lower wafer holder 23 1 , a wafer holder driving unit 234 is disposed via a shaft 233. By the wafer holder driving portion 234, the lower wafer holder 23 1 is freely moved up and down in the vertical direction, and is freely moved in the horizontal direction. Further, the lower wafer holder 231 is freely rotatable around the vertical axis by the wafer holder driving portion 234'. Further, below the lower wafer holder 231, a lift pin (not shown) for supporting the lower and lower wafers WL is provided below. The lift pin is inserted. A through hole (not shown) formed in the lower wafer holder -19-201250900 23 1 is protruded from the upper surface of the lower wafer holder 23 1 . The upper wafer holder 230 is divided into a plurality as shown in Fig. 12, for example, three regions 230a > 230b, 230c » These regions 230a, 230b, 230c are as shown in Fig. 3 by the upper wafer holder 23 0 The center portion is disposed in order toward the outer peripheral portion. Next, the region 2 3 0a has a circular shape in plan view, and the regions 23 0b and 23 0c have a ring shape in plan view. In each of the regions 23 0a, 2 30b, and 23 0c, as shown in Fig. 12, suction pipes 240a, 240b, and 240c for adsorbing and holding the upper wafer Wu are separately provided. Different vacuum pumps 241a, 241b, and 241c are connected to the respective suction pipes 240a, 240b, and 240c. In other words, the upper wafer holder 230 can be configured such that each of the regions 230a, 230b, and 230c can be evacuated by the upper wafer Wu. Further, in the following, the three regions 230a, 230b, and 230c are also referred to as a first region 23a, a second region 230b, and a third region 230c, respectively. Further, the suction pipes 240a, 240b, and 240c are also referred to as a first suction pipe 240a, a second suction pipe 240b, and a third suction pipe 240c, respectively. Further, the vacuum pumps 241a, 241b, and 241c are also referred to as a first vacuum pump 241a, a second vacuum pump 241b, and a third vacuum pump 241c, respectively. A through hole 242 penetrating the thickness direction of the upper wafer holder 230 is formed in a central portion of the upper wafer holder 230. The central portion of the upper wafer holder 230 corresponds to the central portion of the upper wafer Wu that is adsorbed and held by the upper wafer holder 230. Next, the tip end portion 251a of the actuator portion 251 of the urging member 25 0 to be described later is inserted into the through hole 242. On the upper surface of the upper wafer holder 230, a urging member 250 for pressing the center of the upper wafer -20-201250900 is provided. The urging member 250 has an actuator and a cylinder portion 252. In the actuator portion 251, as shown in Fig. 14, an electric air conditioner 253 for supplying air of a specific pressure to the actuator portion is provided. The actuator generates a certain pressure in the longitudinal direction by the air supplied from the electric air conditioner 25 3, and can be fixedly generated regardless of the positional pressure at the point of application of the pressure. Then, the actuator portion 25 1 abuts against the center portion of the upper wafer Wu by the air from the electric air conditioner to load the center portion of the upper wafer Wu. Further, the tip end portion 251a of the 251 is freely moved up and down in the vertical direction by being inserted into the through hole 24 2 from the electric air conditioner 253. The actuator portion 251 is supported by the cylinder portion 252 through the felt lining 254, and the 251 can be freely moved in the vertical direction by, for example, a driving portion of the built-in motor. As described above, the urging member 250 is controlled by the actuator portion 251, and the actuator portion 251 is displaced by the cylinder portion 252. Next, the urging member 250 can press the center portion of the upper wafer Wu and the center of the lower wafer WL at a time when the wafer Wu is described later. The upper wafer holder 230 is provided with an upper photographing member 255 which photographs the lower wafer WL. The upper photographic member 255' is, for example, an angular CCD camera. Further, the upper photographing member 255' may be placed on the wafer holder 231. The lower wafer holder 2 3 1 is divided into a plurality of portions 251 25 1 by a portion 251 as shown in FIG. 5 to make the air 252 actuator portion of the controllable portion of the 253 be loaded. The control WL contact abutting surface wL1 is widely used, for example, -21 - 201250900, two regions 231a, 231b. These regions 231a and 231b are sequentially disposed from the center portion of the lower wafer holder 23 1 toward the outer peripheral portion. Next, the region 231a has a circular shape in plan view, and the region 231b has an annular shape in plan view. In each of the regions 231a and 231b, as shown in Fig. 12, suction pipes 260a and 260b for adsorbing and holding the lower wafer WL are separately provided. Each of the suction pipes 260a and 2 60b is connected to a different vacuum pump 261a, 261b, that is, the lower wafer holder 231 is configured such that each of the regions 231a and 231b can be set to evacuate the lower wafer. . A stopper member 262 that prevents the wafers Wu, WL, and the superposed wafer WT from flying or falling from the lower wafer holder 231 is provided on the outer peripheral portion of the lower wafer holder 231. The stopper member 262 extends in the vertical direction with its top portion located at least above the coincident wafer WT on the lower wafer holder 23 1 . Further, the stopper member 262 is provided at a plurality of outer peripheral portions of the lower wafer holder 213 as shown in Fig. 15, for example, at five locations. The lower wafer holder 23 1, as shown in Fig. 12, is provided with a surface Wmi lower photographing member 263 for photographing the wafer Wu. For the lower photographing member 263, for example, a wide-angle type CCD camera is used. Further, the lower photographing member 263 may be provided on the lower wafer holder 231. As shown in Fig. 1, the above-described joining system 1 is provided with a control unit 300. The control unit 300' is, for example, a computer and has a program storage unit (not shown). The program storage unit houses a program for controlling the processing of the wafers Wu and WL of the bonding system 1 and the wafer WT. In addition, in the program storage unit, the operation of the drive system for controlling the various processing devices or the transfer device described above is also carried out, and the method of the wafer bonding process described later in the bonding system 1 is realized. Further, the aforementioned program is recorded in a computer-readable hard disk (HD), floppy disk (FD), compact disk (CD), optical disk (MO), memory card, and the like. Alternatively, the memory unit may be installed by the control unit 300. Next, a bonding processing method of the wafers w u and W L using the bonding system 1 configured as described above will be described. Figure 16 is a flow chart showing the main steps of the associated wafer bonding process. First, a cassette Cu containing a plurality of wafers Wa, a cassette CL containing a plurality of lower wafers WL, and an empty cassette CT are placed on a specific cassette placed on the loading/unloading station 2. Board 11. Thereafter, the cassette is taken out by the wafer transfer device 22, and the upper wafer Wu in the Cu is transferred to the transfer device 50 of the third processing block G3 of the processing station 3. Next, the upper wafer Wu is transported to the surface modification device 30 of the first processing block G1 by the wafer transfer device 61. The upper wafer Wu carried into the surface modification device 30 is transported by the wafer transfer device 61 and placed on the upper surface of the lower electrode 80. Thereafter, the wafer transfer device 61 is withdrawn by the surface modification device 30, and the gate valve 72 is closed. Thereafter, the vacuum pump 131 is operated, and the atmosphere passing through the inside of the intake port processing container 70 is depressurized to a specific degree of vacuum, for example, 6. 7P a~ 66. 7Pa (50mTorr~500mTorr). Next, as described later, the atmosphere in the processing container 70 in the processing wafer Wa is maintained at the aforementioned specific vacuum. Further, a high voltage of a DC voltage set to 2,500 V is applied to the conductive film 93 of the electrostatic wafer holder 90 by the high voltage power source 96, for example. In this way, -23-201250900 electrostatically adsorbs the wafer Wu on the upper surface of the lower electrode 80 by the Coulomb force generated by the high voltage applied to the electrostatic wafer holder 90. Further, the upper wafer Wu which is statically adsorbed to the lower electrode 80 is maintained at a specific temperature by a heat medium of the heat medium circulation flow path, for example, 20 ° C to 30 ° C. Thereafter, the processing gas supplied from the gas supply source 122 is uniformly supplied to the inside of the processing chamber 70 by the gas discharge port 125 on the lower surface of the upper electrode 110. Next, the first high frequency power source 106 is applied to the lower electrode 80, for example, 13. A high frequency voltage of 56 MHz is applied with a high frequency voltage of, for example, 100 MHz from the upper electrode 110 of the second high frequency power source 112. As a result, an electric field is formed between the upper electrode 110 and the lower electrode 80, and the processing gas supplied to the inside of the processing container 70 is plasmad by the field. By treating the plasma of the gas (hereinafter also referred to as "processing power"), the surface Wm of the upper wafer Wu on the lower electrode 80 is changed, and the organic matter on the surface Wm is removed. At this time, the plasma of the oxygen gas for treating the plasma mainly contributes to the removal of the organic matter on the surface Wm. Further, the plasma of the oxygen gas can also promote the oxidation of the surface Wm of the upper wafer Wu, that is, promote the hydrophilization. Further, the plasma of the gas in the plasma for processing has a certain high energy by This oxygen gas plasma actively (physically) removes organic matter on the surface WU1. Further, the plasma of the oxygen gas is also effective for removing residual moisture contained in the atmosphere contained in the processing container 70. In this manner, the surface of the wafer Wu is modified by the treatment slurry (step S1 of Fig. 16). Next, the upper wafer Wu is transported to the surface hydrophilization device 40 of the second block G2 by the wafer transfer device 61. The upper wafer Wu that is carried into the surface hydrophilization charge 82 electric appliance y to 9 plasma de-surface oxygen is disposed by the wafer transfer device 6-1 to the rotary wafer holder 160. It is adsorbed and kept. Next, the pure water nozzle 173 of the waiting portion 175 is moved to the upper portion of the center portion of the upper wafer Wu by the nozzle arm 171, and the scrubbing cleaning tool 180 is moved to the upper wafer Wu by the scrubbing arm 1 72. Thereafter, the upper wafer Wu is rotated by rotating the wafer holder 160, and pure water is supplied to the upper wafer Wu by the pure water nozzle 173. As a result, a hydroxyl group is attached to the surface Wm of the upper wafer Wu, and the surface WU1 is hydrophilized. Further, the surface Wm of the upper wafer Wu is cleaned by the pure water from the pure water nozzle 173 and the scrubbing cleaning tool 180 (step S2 of Fig. 16). Next, the upper wafer Wu is transferred to the bonding device 41 of the second processing block G2 by the wafer transfer device 61. The upper wafer Wu' loaded into the bonding apparatus 41 transfers the transfer unit 200 to the position adjustment mechanism 210 via the wafer transfer body 202. Next, the orientation of the upper wafer Wu in the horizontal direction is adjusted by the position adjusting mechanism 210 (step S3 of Fig. 16). Thereafter, the upper wafer Wu is delivered by the position adjusting mechanism 210 to the holding arm 221 of the reversing mechanism 220. Then, in the transfer region T1, the front and back surfaces of the upper wafer Wu are reversed by inverting the holding arm 221 (step S4 in Fig. 16). That is, the surface Wm of the upper wafer Wu faces downward. Further, the reverse of the front and back surfaces of the upper wafer Wu may be performed during the movement of the reversing mechanism 220 to be described later. Thereafter, the reversing mechanism 220 is moved to the upper wafer holder 230 side, and the upper wafer Wu is delivered to the upper wafer holder 230 by the reversing mechanism 220. The upper wafer Wu' has its back surface WU2 adsorbed and held at the upper wafer holder (step S5-25-201250900 of Fig. 16). At this time, all of the vacuum pumps 241a, 241b, and 241c are operated to evacuate the upper wafer Wu in all the regions 230a, 230b, and 230c of the upper wafer holder 230. The upper wafer Wu waits at the upper wafer holder 230 until the wafer is transferred to the bonding device 41. When the processing of steps S1 to S5 described above is performed on the upper wafer Wu, the processing of the lower wafer WL is performed next to the upper wafer Wu. First, the lower wafer WL in the cassette CL is taken out by the wafer transfer device 22, and transported to the transfer device 50 of the processing station 3. Next, the lower wafer W1 is transferred to the surface modification device 30 by the wafer transfer device 61, and the surface WL1 of the lower wafer WL is modified (step S6 in Fig. 16). Further, the modification of the surface WL1 of the wafer WL below the step S6 is the same as the above-described step S1. Thereafter, the lower wafer W1 is transported to the surface hydrophilization device 40 by the wafer transfer device 61, and the surface WL1 of the lower wafer WL is hydrophilized while washing the surface WL1 (step S7 of Fig. 16). Further, in step S7, the surface WL1 of the wafer W1 is hydrophilized and washed, which is the same as the above-described step S2, and therefore detailed description is omitted. Then, the lower wafer W1 is transported to the bonding apparatus 41 by the wafer transfer device 61. The lower wafer WL carried in the bonding apparatus 41 is transported to the position adjusting mechanism 210 by the transfer unit 200 via the wafer transfer body 202. Then, the position adjustment mechanism 210 adjusts the orientation of the lower wafer WL in the horizontal direction (Fig. Step 16 of S8). Thereafter, the lower wafer WL is transferred to the lower wafer holder 23 by the wafer transfer body 202, and is adsorbed and held by the lower wafer holder 2 3 1 (step -26-201250900 S9 of Fig. 16). At this time, all of the vacuum pumps 261a and 261b are operated, and the lower wafer WL is evacuated to all the regions 231a and 231b of the lower wafer holder 231. Then, the front surface WL1 of the lower wafer W1 is adsorbed and held by the lower wafer holder 231 so that the surface WL1 of the lower wafer faces upward. Next, the position of the upper wafer Wu held by the upper wafer holder 230 and the lower wafer WL held by the lower wafer holder 231 are adjusted in the horizontal direction. As shown in FIG. 17, the surface WL1 of the lower wafer WL is formed in a predetermined plural number, for example, a reference point A of four or more points, and similarly, the surface Wu1 of the upper wafer Wu is formed in a predetermined plural number, for example, 4 Point point B above. As these reference points A and B, for example, specific patterns formed on, for example, the wafers W1 and Wu are used, respectively. Next, the upper photographing member 255 is moved in the horizontal direction, and the surface WL1 of the lower wafer WL is photographed. Further, the lower photographing member 263 is moved in the horizontal direction so that the surface of the upper crystal circle Wu is photographed. Thereafter, the position of the reference point A of the lower wafer WL displayed on the image photographed by the upper photographing member 255 coincides with the position of the reference point B of the upper wafer Wu displayed on the image photographed by the lower photographing member 263. The mode 'adjusts the position of the lower wafer W1 in the horizontal direction (including the orientation in the horizontal direction) by the lower wafer holder 23 1 . That is, the lower wafer holder 231 is moved in the horizontal direction by the wafer holder driving portion 234', and the position of the lower wafer in the horizontal direction is adjusted. In this manner, the position of the upper wafer 1^1 and the lower wafer WL in the horizontal direction is adjusted (step S10 of Fig. 16). Further, the orientation of the wafers Wu and WL in the horizontal direction is adjusted by the position adjusting mechanism 210 in steps S3 and S8, but fine adjustment is made in step S10 to -27-201250900. Further, in the step S10 of the present embodiment, the specific patterns formed on the wafers W1, Wu are used as the reference points A, B', but other reference points may be used. For example, the outer peripheral portion and the notch portion of the wafers W l and W u can be used as reference points. Thereafter, the wafer holder driving unit 234 raises the lower wafer holder 23 1 as shown in Fig. 18 to arrange the lower wafer W1 at a specific position. At this time, the interval D between the surface Wli of the wafer W1 and the surface Wui of the upper wafer Wu is a specific distance, for example, 5 Ο μηη. In this manner, the position of the upper wafer Wu and the lower wafer WL in the vertical direction is adjusted (step S11 of Fig. 16). Further, in step S5 to step S11', the upper wafer Wu is evacuated in all of the regions 230a, 230b, and 230c of the upper wafer holder 230. Similarly, in steps S9 to S11, the lower wafer WL is evacuated in all the regions 231a and 231b of the lower wafer holder 231. Thereafter, the operation of the first vacuum pump 241a is stopped, and as shown in Fig. 19, the evacuation of the wafer Wu on the first suction pipe 240a of the first region 230a is stopped. At this time, in the second region 230b and the third region 230c, the upper wafer Wu is evacuated and adsorbed and held. Thereafter, the actuator portion 251 is lowered by the cylinder portion 252 of the urging member 250, and the center portion of the wafer Wa is pressed while the upper wafer Wu is lowered. At this time, the air supplied from the electric air conditioner 25 3 is applied to the actuator unit 251 in a state where the upper wafer WU is not applied, and the load of the urging pin 25 1 is moved by 7 Ο μηι, for example, 2 〇. 〇g. Then, by pushing the member 250, the center portion of the upper wafer Wu is brought into contact with the center portion of the lower wafer WL and pressed (step S12 of Fig. 16). -28-201250900 In this manner, the joining is started between the center portion of the wafer Wu and the center portion of the lower wafer w L (the thick line portion in Fig. 19). That is, the surface Wm of the upper wafer Wu and the surface WL1 of the lower wafer WL are modified in steps S1 and S6, respectively, so that a van der Waals force is first generated between the surfaces Wm and WL1 so that the surfaces WU1 and WL1 are mutually Engage. Thereafter, the surface Wai of the upper wafer Wu and the surface WLi of the lower wafer WL are hydrophilized in steps S2 and S7, respectively, so that the hydrophilic groups between the surfaces Wu! and WL1 are hydrogen-bonded to make the surface Wm WL1 is firmly joined to each other. Then, as shown in FIG. 20, the urging member 250 stops the operation of the second vacuum pump 241b while the center portion of the upper wafer wu and the center portion of the lower wafer WL are pressed, and stops the second region 23. The second vacuum tube 0b of 0b is evacuated from the wafer Wu. As a result, the upper wafer Wu held in the second region 23 0b falls on the lower wafer WL. After that, the operation of the third vacuum pump 241c is stopped, and the vacuum of the wafer Wu on the third suction pipe 240c in the third region 230c is stopped. As described above, the center portion of the upper wafer Wu faces the outer peripheral portion, and the evacuation of the upper wafer Wu is stopped, and the upper wafer Wu is sequentially dropped to contact the lower wafer W1. Next, the joining of the van der Waals force and the hydrogen bonding between the surfaces WU1 and WL1 is sequentially expanded in the above-described combination. Thus, as shown in Fig. 21, the surface Wm of the upper wafer Wu is in full contact with the surface WL1 of the lower wafer WL, and the upper wafer Wu and the lower wafer WL are joined (step S13 of Fig. 16). Thereafter, as shown in Fig. 22, the urging member 250 is raised to the upper wafer holder 230. Further, the lower wafer holder 231 stops the vacuuming of the wafer WL under the suction tubes 260a, 260b, and stops the adsorption holding of the wafer Wi under the lower wafer holder 231 from -29 to 201250900. The superposed wafer transfer device 61 in which the upper wafer Wu and the lower wafer WL are bonded is transferred to the transfer device 51, and then the wafer transfer device 22 of the borrowed station 2 is transported to a specific cassette_ cassette CT. As described above, according to the above embodiment, the series of wafers Wu and W1 are terminated, and the urging member 250 has the 251 and the cylinder portion 252. Therefore, in step S12, the actuator portion 251 can be moved in the vertical direction. The actuator is pressed at the center of the upper wafer Wu, and the actuator portion 251 controls the load of the center portion of the wafer Wu to press the center portion of the wafer W1 under the wafer Wu. That is, the urging member 250 and the portion 251 perform the control of the load, and the cylinder portion 252 controls the movement of the 251. In this manner, the plucking of the present embodiment is controlled by the different mechanisms 251 and 252, so that the application to the upper wafer Wu can be strictly controlled. Further, the control of the load of the actuator unit 251 is controlled by the pressure-controlled electric air conditioner 253, so that the center applied to the upper wafer Wu can be more tightly controlled. Then, in step S13, The wafer circle WL can be sequentially joined to the outer peripheral portion at the center portion of the state circle Wu of the center portion of the appropriate wafer circle Wu and the center portion of the lower wafer W1. That is, the bonding of the upper wafers w u and # can be performed appropriately. As a result, it is possible to reduce the poorly bonded product and improve the yield. D wT is processed by the joining by carrying in the Go board 11 . The cylinder portion 252 portion 251 of the actuator portion I abuts against the center portion applied thereto and the load of the movable center portion by the actuator row actuator portion member 250, and can be performed with strict air. The load of the department. Heavy pressing on the upper crystal, from the upper crystal Wu and the lower crystal wafer W l high product -30- 201250900 Also, it is also considered that the slamming member, for example, only the cylinder, the cylinder structure can not be strictly controlled load, In this case, a small urging member such as 200 g is applied to the urging member without being activated. In this regard, the present embodiment 250 is useful in performing proper load control. If the cylinder is constructed, only the ram member 250 of the present embodiment can be controlled by adjusting the air of the actuator 253. Pressure, and the load applied according to the center portion of the wafer Wa can be controlled. That is, the root can improve the freedom of load control. In addition, the bonding device 4 1 adjusts the orientation of the horizontal direction of the Wu and WL in addition to the wafer upper wafer holder 230 and the lower wafer holder 231, and adjusts the front and back reversing mechanism 220 of the on-chip wafer Wu. The bonding of the wafers Wu and Wl is performed efficiently. Further, in addition to the bonding device 41, the wafer modification device 30 is provided with the modified wafers Wu and WL12, and the surface of the surface Wm and WL1 is hydrophilized by the surface WU: the wafer Wa is efficiently performed in one system. Wl is made to improve the productivity of the wafer bonding process. In the above embodiment, the wafer holder 23 can be freely raised and lowered in the vertical direction and can be oriented, but the upper wafer holder 230 can be freely moved in the horizontal direction in the vertical direction. . In addition, the occasion of construction. However, as in the case of this embodiment, there is a kinetic member of this type. In addition, the escaping structure is heavy. In this case, the electric air-conditioning unit 25 1 is also provided with the WL for adjusting the wafer structure 2 1 0 and the reverse rotation so that the system 1 can be joined to the device 1 in one device. The surface Wm ' WL | hydrophilization is 40, so it can be joined. That is, the accessible portion 234 freely moves the lower portion to the horizontal level, or allows the upper wafer holder -31 - 201250900 230 and the lower wafer holder 231 1 to freely move up and down in the vertical direction and freely move in the horizontal direction. It can also be constructed. The preferred embodiments of the present invention have been described above with reference to the drawings, but the present invention is not limited to the related examples. It is to be understood that various modifications and changes can be made without departing from the spirit and scope of the invention. The present invention is not limited to this example, and various aspects can be adopted. The present invention is also applicable to a case where the substrate is an FPD (flat panel display) other than a wafer, or a mask such as a mask for a mask. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a configuration of a joining system according to this embodiment. Fig. 2 is a side elevational view showing the internal constitution of the joining system of the present embodiment. Fig. 3 is a side view showing the configuration of the upper wafer and the lower wafer. Fig. 4 is a longitudinal sectional view showing the configuration of the surface modifying device. Figure 5 is a plan view of the lower electrode. Fig. 6 is a longitudinal sectional view showing a configuration of a surface hydrophilizing device. Fig. 7 is a schematic cross-sectional view showing the configuration of the surface hydrophilizing device. Fig. 8 is a cross-sectional view showing the configuration of the joining device. Fig. 9 is a longitudinal sectional view showing the configuration of the joining device. Fig. 10 is a side view showing the configuration of the position adjusting mechanism. Fig. 1 is a side view showing the configuration of the reversing mechanism. -32- 201250900 Fig. 1 2 is a longitudinal sectional view showing the configuration of the upper wafer holder and the lower wafer holder. Figure 13 is a plan view of the upper wafer holder as seen from below. Fig. 14 is a perspective view showing the configuration of the urging member. Figure 15 is a plan view of the lower wafer holder as seen from above. Figure 16 is a flow chart showing the main steps of the wafer bonding process. Fig. 1 is an explanatory view showing a pattern for adjusting the position of the upper wafer and the lower wafer in the horizontal direction. Fig. 1 is an explanatory view showing a pattern for adjusting the position of the upper wafer and the lower wafer in the vertical direction. Fig. 19 is an explanatory view showing a pattern in which the center portion of the upper wafer is brought into contact with the center portion of the lower wafer and pressed. Fig. 20 is an explanatory view showing a pattern in which the upper wafer is abutted on the lower wafer in order. Fig. 21 is an explanatory view showing a pattern in which the surface of the upper wafer is brought into contact with the surface of the lower wafer. Fig. 22 is an explanatory view showing a pattern in which the upper wafer and the lower wafer are joined. [Main component symbol description] 1 : Bonding system 2: Carrying in and out station 3: Processing station 3 〇: Surface modifying device - 33 - 201250900 40 : Surface hydrophilization device 41: bonding device 60: wafer transfer region 2 3 0 : upper wafer holder 231 : lower wafer holder 242 : through hole 2 5 0 : urging member 251 : actuator portion 2 5 1 a : Tip portion 252: cylinder portion 253: electric air conditioner 300: control portion Wu: upper wafer WU1: surface W1: lower wafer wL1: surface wT: coincident wafer-34-