201250043 六、發明說明： 【發明所屬之技術領域】 剛 本發明係有關於—種具碳化物之太陽能光熱選擇性 吸收膜，尤其疋私一種具有光熱轉換效率極佳、良好的 熱傳導性、高化學抵抗性、特別平滑且絕緣性高，並具 有可見光到近紅外光〔小於3 _〕波段的高光吸收性 及遠紅外光〔大於3 "m〕波段的低光吸收性等優異性 質，而在其整體施行使用上更增實用功效特性的具碳化 物之太陽能光熱選擇性吸收膜創新設計者。 【先前技術】 〇 [0002] 100120342 按’ 「能源」隨著工業及社會的日趨發展，其所扮 决的角色祕的越來越重要，傳統能源因世界經濟發展 ’更為加速能Μ耗’使得地球的資源將會隨著逐漸開 發而逐漸耗竭，因此解決能源問題將是未來重要課題。 而社會的不斷進步’對於境破壞就越加嚴重，人們也 開始警覺到環保問題，社會大眾也期待能夠以法律訂出 明確國家潔淨再生能源發展方向。能源和環境是當前全 球共同關注的焦點，最明顯的例子是因排放大量二氧化 〇 碳以及各種硫化物毒性廢氣，造成全球暖化、酸雨、氣 候急劇變遷與南北極冰原逐漸融化，雖然核能號稱是二 氧化碳排放少的能源，但它有使用安全上的疑慮，其放 射性物質有外洩問題，會對人體及周遭環境造成極為嚴 重的不良影響。依照目前所開發的能源中，以太陽能最 具潛力，也是最容易取得的能源，太陽能除了具有上述 特性外，其能量對於人類來說是最穩定性、最具安全性 、零開發成本、零污染，它是人類解決能源短缺的最好 1002034422-0 表單編號Α0101 第4頁/共14頁 201250043 [0003] [0004]201250043 VI. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a solar-photothermal selective absorption film having a carbide, in particular, a light-to-heat conversion efficiency, good thermal conductivity, and high chemistry. Resistant, particularly smooth and highly insulating, and has excellent light absorption properties from visible light to near-infrared light [less than 3 _] and low light absorption in far-infrared light [greater than 3 "m], etc. It is an innovative designer of carbide-based solar thermal selective absorbing membranes that uses more practical and effective properties. [Prior Art] 〇[0002] 100120342 According to the 'energy' industry and society, the role of the role is becoming more and more important. The traditional energy industry is more accelerated due to the development of the world economy. The resources of the earth will be gradually depleted with the development of the earth, so solving the energy problem will be an important issue in the future. The continuous improvement of the society has become more serious about the destruction of the environment. People are also beginning to be aware of environmental issues. The public is also looking forward to the legal development of the direction of the country's clean renewable energy development. Energy and the environment are the current global concerns. The most obvious example is the global warming, acid rain, rapid climate change and the melting of the Arctic and Arctic ice sheets due to the emission of large amounts of cerium oxide carbon and various sulphur toxic exhaust gases, although nuclear energy is known as It is an energy source with low carbon dioxide emissions, but it has doubts about the safety of use, and its radioactive materials have leakage problems, which can cause extremely serious adverse effects on the human body and the surrounding environment. According to the energy currently developed, solar energy has the most potential and is the easiest energy to obtain. In addition to the above characteristics, solar energy is the most stable, safe, zero development cost and zero pollution for human beings. It is the best solution for humans to solve energy shortages. 1002034422-0 Form No. 1010101 Page 4 of 14 201250043 [0003] [0004]
[0005] 100120342 選擇。 而現階段一般常見用來吸收太陽能進行光熱轉換之 結構設計，其具有下列缺點： 1. 選擇性吸收層厚度無法最佳化：一般業者對於選擇 性膜層對光譜吸收與放射特性所發生機制不清楚， 無法確知光譜吸收與放射情況。加上所鑛膜層太厚 將造成熱傳效率降低，太薄將造成吸收率下降；使 得一般僅能依其經驗進行烤漆膜喷漆，無法精確控 制光熱轉換的最大效益。 2. 烤漆膜因為太陽UV光照射造成老化，熱水器壽命變 短：利用簡單烤黑漆作為選擇性膜層以獲得能量， 對於因為在烈曰長時間曝曬下，而造成吸收膜層老 化，熱水器壽命變短，造成於冬天熱水不夠熱；使 得一般皆為借由輔助加熱器方式，再次增加更多熱 量，但如此卻已失去節約能源與潔淨能源應用意義 〇 緣是，發明人秉持多年該相關行業之豐富設計開發 及實際製作經驗，針對現有之結構再予以研究改良，提 供一種具碳化物之太陽能光熱選擇性吸收膜，以期達到 更佳實用價值性之目的者。 【發明内容】 本發明具碳化物之太陽能光熱選擇性吸收膜，其主 要係設有鍍膜基材，且於該鍍膜基材上鍍上吸收膜，該 吸收膜係為於類碳膜〔D L C〕再鍍上金屬碳化物膜， 或係令該吸收膜為金屬碳化物膜；藉此，以具有光熱轉 表單編號A0101 第5頁/共14頁 1002034422-0 201250043 換效率極佳、良好的熱傳導性、高化學抵抗性、特別平 滑且絕緣性高，並具有可見光到近紅外光〔小於3 β m 〕波段的高光吸收性及遠紅外光〔大於3 β m〕波段的 低光吸收性等優異性質，而在其整體施行使用上更增實 用功效特性者。 【實施方式】 [0006] [0007] [0008] 為令本發明所運用之技術内容、發明目的及其達成 之功效有更完整且清楚的揭露，茲於下詳細說明之，並 請一併參閱所揭之圖式及圖號： ^ 〇 首先，請參閱第一圖本發明之結構示意圖所示，本 發明主要係設有為金屬材料、或銘擠型材料、或玻璃、 或不鏽鋼之鍍膜基材（1 )，且於該鍍膜基材（1 )鍍 上吸收膜（2 )，該吸收膜（2 )係為於類碳膜〔D L C〕（ 2 1 )再鍍上金屬碳化物膜（2 2)，或係令該 吸收膜（2)為金屬碳化物膜（2 2)〔請一併參閱第 二圖本發明之另一實施例結構示意圖所示〕，該金屬碳 化物膜（22)可為鐵、鎳、鉻任何一種金屬或其任意 〇 組成之合金搭配碳所形成的化合物，如碳化鐵〔F e C 〕、碳化鎳〔N i C〕、碳化鉻〔C r C〕、碳化鐵鎳 鉻〔（Fe，Ni，Cr)C〕等。 其中：該吸收膜（2 )是使用射頻非平衡磁控式濺 鍍機在氬氣與C 2 Η 2室溫下來沈積於鍍膜基材（1 )上 ，且該鍍膜基材（1 )在沈積的製程中會旋轉以達到產 生均勻的薄膜。鍍膜基材（1)在鍍上之吸收膜（2) 前，其需經超音波清洗機以下列程序進行清潔：三氣乙 100120342 表單編號Α0101 第6頁/共14頁 1002034422-0 201250043 烧一5 0分鐘；去離子水一1 0分鐘；丙酮一5分鐘； 去離子水一1 〇分鐘；乙醇一5分鐘；去離子水一 1 0 分鐘。在沈積前，靶材於1 2mTo r r的氬氣下預鍍 3 0分鐘，來移除源自於靶材腐蝕氧化的部份。 [0009] ◎ [0010][0005] 100120342 Select. At present, the structure design for absorbing solar energy for photothermal conversion is generally used, which has the following disadvantages: 1. The thickness of the selective absorbing layer cannot be optimized: the general mechanism does not affect the spectral absorption and emission characteristics of the selective film layer. Clearly, spectral absorption and radiation are not known. In addition, if the mineral film layer is too thick, the heat transfer efficiency will be lowered, and too thin will cause the absorption rate to decrease; so that the paint film can only be painted according to its experience, and the maximum benefit of the photothermal conversion cannot be accurately controlled. 2. The paint film is aging due to the sun's UV light, and the life of the water heater is shortened: the simple baked black paint is used as the selective film layer to obtain energy. For the aging of the absorption film due to prolonged exposure to the blaze, the life of the water heater Shortening, resulting in insufficient hot water in winter; so that it is generally added by the auxiliary heater method, but it has lost the significance of energy conservation and clean energy application. The industry's rich experience in design and development and actual production, research and improvement of the existing structure, to provide a carbon-based solar thermal selective absorption film, in order to achieve better practical value. SUMMARY OF THE INVENTION The present invention has a carbonized solar photothermal selective absorbing film, which is mainly provided with a coated substrate, and an absorbing film is deposited on the coated substrate, and the absorbing film is a carbon-like film [DLC] The metal carbide film is further plated, or the absorbing film is made of a metal carbide film; thereby, the photothermal transfer form No. A0101, page 5 / page 14 1002034422-0 201250043 has excellent conversion efficiency and good thermal conductivity. High chemical resistance, particularly smooth and high insulation, and excellent in light absorption from visible light to near-infrared light [less than 3 β m ] and low light absorption in far-infrared light [greater than 3 β m] band And in its overall implementation, the use of more practical features. [0007] [0007] [0008] For a more complete and clear disclosure of the technical content, the purpose of the invention and the effects thereof achieved by the present invention, it will be explained in detail below, and please refer to it together. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing the structure of the present invention. The present invention is mainly provided with a metal material, or an extruded material, or a coated substrate of glass or stainless steel. The material (1) is coated with an absorbing film (2) on the coated substrate (1), and the absorbing film (2) is further plated with a metal carbide film on the carbon-like film [DLC] (2 1 ) (2) 2), or the absorbing film (2) is a metal carbide film (2 2) [please refer to the second figure for a schematic view of another embodiment of the present invention], the metal carbide film (22) a compound formed by mixing carbon of any metal of iron, nickel or chromium or an alloy thereof, such as iron carbide [F e C ], nickel carbide [N i C], chromium carbide [C r C], carbonization Iron nickel chromium [(Fe, Ni, Cr) C] and the like. Wherein: the absorbing film (2) is deposited on the coated substrate (1) at room temperature by argon gas and C 2 Η 2 using a radio frequency unbalanced magnetron sputtering machine, and the coated substrate (1) is deposited. The process will rotate to achieve a uniform film. The coated substrate (1) is cleaned by the ultrasonic cleaning machine in the following procedure before the plated absorbent film (2): Three gas B 100120342 Form No. 1010101 Page 6 / Total 14 pages 1002034422-0 201250043 Burn one 50 minutes; deionized water for 10 minutes; acetone for 5 minutes; deionized water for 1 minute; ethanol for 5 minutes; deionized water for 10 minutes. Prior to deposition, the target was pre-plated for 30 minutes under argon at 12 mTorr to remove the portion of the target that was corrosively oxidized. ◎ [0010]
[0011] 而鍍膜基材（1 )沉積的參數如下：濺鍍用靶材與 而鍵膜基材（1 )相隔之距離固定為4〜1 5公分、而 鍍膜基材（1)偏壓為0〜一100 0伏特且製程時間 皆為1 0〜200分鐘。 另，請再一併參閱第三圖本發明之又一實施例結構 示意圖所示，本發明更可在之吸收膜（2)之金屬碳化 物膜（2 2)上再濺鍍有氧化膜或氮化膜之薄膜層（2 3)，如：利用矽〔S i 〕乾材、氬氣與氧氣濺鑛作為 保護層與抗反射層之二氧化矽〔S i Ο〕薄膜，該薄膜 層（2 3 )可為一透明狀具有保護作用、或能提升光熱 轉換效率。而薄膜層（2 3)製程參數為：氣體壓力為 4 m t 〇 r r ; A r / 0 2 流量比例為5 ;基材偏壓 為0〜_ 1 0 0 0伏特伏特；濺鍍機之濺鍍能量為5 0 〜1 0 0 0 W。 如此一來，使得本發明在施行使用上，當氣體工作 壓力與C2H2/Ar比值一樣時，C2H2與Ar之流 量越大，則吸收膜（2 )之光熱轉換效率越大。當C 2 Η 2氣體流量越大時，即C含量越大時，吸收膜（2 )之光 熱轉換效率越大。吸收膜（2 )之光熱轉換效率最大為 8 6 · 9 8 7 6%。 100120342 表單編號Α0101 第7頁/共14頁 1002034422-0 201250043 [0012] 而當於吸收膜（2 )之金屬碳化物膜（2 2 )上濺 鍍為氧化膜或氮化膜之薄膜層（2 3)，且該薄膜層（ 2 3 )厚度為5 0〜1 0 0 0 nm時，更可以增加其光 熱轉換效率和熱穩定性，可增加光吸收波長範圍，且使 吸收率往短波長偏移，並使最佳之光熱轉換效率大幅提 升至9 5 %以上。 [0013] 藉由以上所述，本發明之元件組成與使用實施說明 可知，本發明與現有結構相較之下，本發明主要係具有 光熱轉換效率極佳、良好的熱傳導性、高化學抵抗性、 特別平滑且絕緣性高，並具有可見光到近紅外光〔小於 3 v m〕波段的高光吸收性及遠紅外光〔大於3 g m〕 波段的低光吸收性等優異性質，而在其整體施行使用上 更增實用功效特性者。 [0014] 然而前述之實施例或圖式並非限定本發明之產品結 構或使用方式，任何所屬技術領域中具有通常知識者之 適當變化或修飾，皆應視為不脫離本發明之專利範疇。 [0015] 綜上所述，本發明實施例確能達到所預期之使用功 效，又其所揭露之具體構造，不僅未曾見諸於同類產品 中，亦未曾公開於申請前，誠已完全符合專利法之規定 與要求，爰依法提出發明專利之申請，懇請惠予審查， 並賜准專利，則實感德便。 【圖式簡單說明】 [0016] 第一圖：本發明之結構示意圖 [0017] 第二圖：本發明之另一實施例結構示意圖 100120342 表單編號A0101 第8頁/共14頁 1002034422-0 201250043 [0018] 第三圖：本發明之又一實施例結構示意圖 【主要元件符號說明】 [0019] (1 ) 鍵膜基材 (2 ) 吸收膜 [0020] (21) 類碳膜 (22) 金屬碳化物膜 [0021] (23) 薄膜層[0011] The parameters of the deposition of the coating substrate (1) are as follows: the distance between the target for sputtering and the bonding film substrate (1) is fixed to 4 to 15 cm, and the coating substrate (1) is biased to 0~100 0 volts and the process time is 10 to 200 minutes. In addition, please refer to the third embodiment of the present invention for further illustrating the structural schematic view of the present invention. The present invention can further deposit an oxide film on the metal carbide film (2 2) of the absorption film (2). a thin film layer (23) of a nitride film, such as a cerium oxide [S i Ο] film using a dry material of 矽 [S i ], argon gas and oxygen splash as a protective layer and an antireflection layer, the film layer ( 2 3 ) It can be protective for a transparent shape or can improve the efficiency of photothermal conversion. The process parameters of the film layer (2 3) are: gas pressure is 4 mt 〇rr; A r / 0 2 flow ratio is 5; substrate bias is 0~_1 0 0 volt volt; sputtering of sputtering machine The energy is 5 0 ~ 1 0 0 0 W. As a result, in the present invention, when the gas working pressure is the same as the C2H2/Ar ratio, the larger the flow rate of C2H2 and Ar, the greater the light-to-heat conversion efficiency of the absorbing film (2). When the gas flow rate of C 2 Η 2 is larger, that is, the larger the C content, the photothermal conversion efficiency of the absorption film (2) is larger. The photothermal conversion efficiency of the absorption film (2) is at most 8 6 · 9 8 7 6%. 100120342 Form No. 1010101 Page 7 of 14 1002034422-0 201250043 [0012] When the metal carbide film (2 2 ) of the absorption film (2) is sputtered as a thin film layer of an oxide film or a nitride film (2) 3), and the film layer (23) has a thickness of 50 to 1 0 0 nm, which can increase the photothermal conversion efficiency and thermal stability, increase the light absorption wavelength range, and shift the absorption rate to a short wavelength. Move and maximize the efficiency of photothermal conversion to over 95%. [0013] From the above, the component composition and the use description of the present invention show that the present invention has excellent photothermal conversion efficiency, good thermal conductivity, and high chemical resistance as compared with the prior art. It is particularly smooth and highly insulating, and has excellent light absorption properties from visible light to near-infrared light (less than 3 vm) and low light absorption in far-infrared light (greater than 3 gm), and is used in its entirety. More practical and effective features. [0014] However, the above-described embodiments or drawings are not intended to limit the structure or the manner of use of the present invention, and any suitable changes or modifications may be made without departing from the scope of the invention. [0015] In summary, the embodiments of the present invention can achieve the expected use efficiency, and the specific structure disclosed therein has not been seen in similar products, nor has it been disclosed before the application, and has completely complied with the patent. The provisions and requirements of the law, the application for invention patents in accordance with the law, and the application for review, and the grant of patents, are truly sensible. BRIEF DESCRIPTION OF THE DRAWINGS [0016] First FIG.: Schematic diagram of the structure of the present invention [0017] Second diagram: Schematic diagram of another embodiment of the present invention 100120342 Form No. A0101 Page 8 of 14 1002034422-0 201250043 [ 3018] Fig. 3 is a schematic view showing the structure of another embodiment of the present invention [Description of main component symbols] [1] Bond film substrate (2) Absorbing film [0020] (21) Carbon film (22) Metal carbonization Film [0021] (23) film layer
D 100120342 表單編號A0101 第9頁/共14頁 1002034422-0D 100120342 Form No. A0101 Page 9 of 14 1002034422-0