TW201247415A - Laminated board, circuit board, and semiconductor package - Google Patents

Laminated board, circuit board, and semiconductor package Download PDF

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Publication number
TW201247415A
TW201247415A TW101113167A TW101113167A TW201247415A TW 201247415 A TW201247415 A TW 201247415A TW 101113167 A TW101113167 A TW 101113167A TW 101113167 A TW101113167 A TW 101113167A TW 201247415 A TW201247415 A TW 201247415A
Authority
TW
Taiwan
Prior art keywords
resin
layer
prepreg
base material
fiber base
Prior art date
Application number
TW101113167A
Other languages
Chinese (zh)
Other versions
TWI583560B (en
Inventor
Iji Onozuka
Koji Sato
Hiroki Shinozaki
Takeshi Hosomi
Original Assignee
Sumitomo Bakelite Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Publication of TW201247415A publication Critical patent/TW201247415A/en
Application granted granted Critical
Publication of TWI583560B publication Critical patent/TWI583560B/en

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/24—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
    • C08J5/247—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs using fibres of at least two types
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/22—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
    • B32B5/24—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
    • B32B5/26—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer another layer next to it also being fibrous or filamentary
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/22—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
    • B32B5/24—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
    • B32B5/28—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer impregnated with or embedded in a plastic substance
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/24—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/03—3 layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/20—All layers being fibrous or filamentary
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
    • B32B2260/02—Composition of the impregnated, bonded or embedded layer
    • B32B2260/021—Fibrous or filamentary layer
    • B32B2260/023—Two or more layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
    • B32B2260/04—Impregnation, embedding, or binder material
    • B32B2260/046—Synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
    • B32B2262/02—Synthetic macromolecular fibres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
    • B32B2262/10—Inorganic fibres
    • B32B2262/101—Glass fibres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2305/00—Condition, form or state of the layers or laminate
    • B32B2305/07—Parts immersed or impregnated in a matrix
    • B32B2305/076—Prepregs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/732—Dimensional properties
    • B32B2307/734—Dimensional stability
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/08—PCBs, i.e. printed circuit boards
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2300/00—Characterised by the use of unspecified polymers
    • C08J2300/24—Thermosetting resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0183—Dielectric layers
    • H05K2201/0191—Dielectric layers wherein the thickness of the dielectric plays an important role

Abstract

A laminated board (100) of the present invention is obtained by laminating in sequence of a first prepreg (201) comprising a first glass fiber substrate (101); one layer or more of a second prepreg (202) comprising an organic fiber substrate, having no glass fiber substrate contained therein; and a third prepreg (203) comprising a second glass fiber substrate (102).

Description

201247415 六、發明說明： 【發明所屬之技術領域】 本發明係關於積層板、電路基板及半導體封裝。 【先前技術】 近年來，隨著電子設備之高功能化及輕薄短小化之要求，電 路基板越來越有薄型化之傾向。 通常之電路基板主要包括將包含纖維基材層與樹脂層之數 種預浸料積層喊_層板。現行之積層板之域例如為用於 中央處理單7〇(CPU ’ central Processing Unit)中所使用的覆晶 求柵陣聊CBGA ’ Flip Chip Ball Grid Array)且厚度為 〇.8 mm 左右者。 、近年來，出於輕薄短小化之要求，藉由削減構件成本、加工 成本等而降低基板成本’提高電氣特性等理由，積層板之薄型 化不斷發展。最近，亦正在開發積層板之厚度為0.4 mm左右、 進而為0.2 mm以下者。 然而，於使積層板之厚度變薄之情況，由於積層板之強度下 降或熱膨脹餘增加導致歡_增大。其結果為存在半 導體封裝之㈣之變動量增大、安裝良率下降之情況。 作為解決上述問題之手段，例如有以下文獻中所 段。 於專利文獻1(日本專利特開昭吻期號蝴中記載 有：將玻璃不織布之拉㈣度之縱向及橫㈣比設定為規定範 101113167 201247415 圍，藉此減少預浸料之趣曲及扭曲。 專利文獻2(日本專利特開平Μ59543號公報)係關於趣曲或 扭曲較、且尺寸穩定性優異之印刷電路用積層板之製造方 法於專利文獻2中兄載有：控制表面層中所使用之玻璃織布 之縱、橫方向的織入根數之差及中間層中所使用之玻璃不織布 之縱、橫的拉伸強度比，藉此實現縱、橫兩方向之平衡。 於專利文獻3(日本專利特開2008-258335號公報）中記栽 有：藉由使用纖維基材於厚度方向上分佈不均之增層，可有效 地防止半導體封裝之趣曲。 [先前技術文獻] [專利文獻] 專利文獻1 :曰本專利特開昭62_292428號公報 專利文獻2:曰本專利特開平4_259543號公報 專利文獻3 :日本專利特開2008-258335號公報 【發明内容】 (發明所欲解決之問題） 然而，隨著電路基板之進—步之薄型化的發展，積層板之魅 曲變得更明顯。又，隨著積層板之翹曲之增大，電路基板之翹 曲之增大及由此鱗致的半導體㈣之翹曲之增大亦變得更 明顯。 專利文獻1、2及3之技術雖於解決積層板之翹曲之方面有 效，但隨著電路基板之進一步之薄型化，期望開發出進一步減 101113167 201247415 少起曲之積層板。201247415 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a laminated board, a circuit board, and a semiconductor package. [Prior Art] In recent years, with the demand for high functionality and lightness and thinness of electronic devices, circuit boards have become more and more thin. A typical circuit substrate mainly comprises a plurality of prepreg layers comprising a fibrous substrate layer and a resin layer. The current layer of the laminate is, for example, a CBGA 'Flip Chip Ball Grid Array for use in a central processing unit, and has a thickness of about 88 mm. In recent years, thinner and thinner laminates have been developed for reasons such as reduction in component cost, processing cost, and the like, and reduction in substrate cost. Recently, the thickness of the laminate is also about 0.4 mm and further 0.2 mm or less. However, in the case where the thickness of the laminated board is made thin, the strength of the laminated board is lowered or the thermal expansion is increased to cause an increase. As a result, there is a case where the variation amount of (4) of the semiconductor package is increased and the mounting yield is lowered. As means for solving the above problems, for example, there are some of the following documents. Patent Document 1 (Japanese Patent Laid-Open No. 1) describes that the vertical and horizontal (four) ratios of the horizontal (four) degrees of the glass non-woven fabric are set to a predetermined range of 101113167 201247415, thereby reducing the distortion and distortion of the prepreg. Patent Document 2 (Japanese Laid-Open Patent Publication No. 59-543) is a method for producing a laminated circuit for a printed circuit which is excellent in distortion or distortion and excellent in dimensional stability. Patent Document 2 discloses a method for controlling a surface layer. The difference between the longitudinal and transverse tensile strength ratios of the glass woven fabric in the longitudinal and transverse directions and the longitudinal and transverse tensile strength ratio of the glass nonwoven fabric used in the intermediate layer, thereby achieving the balance between the longitudinal and the transverse directions. (Japanese Patent Laid-Open Publication No. 2008-258335) It is noted that the use of a fibrous substrate in the thickness direction to distribute the uneven layer can effectively prevent the semiconductor package from being interesting. [Prior Art Document] [Patent [Patent Document] Patent Document 1: Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The problem to be solved) However, with the development of the thinning of the circuit substrate, the charm of the laminated board becomes more obvious. Moreover, as the warpage of the laminated board increases, the warpage of the circuit substrate becomes The increase and the increase in warpage of the semiconductor (4) due to the scale are also more apparent. The techniques of Patent Documents 1, 2 and 3 are effective in solving the warpage of the laminated board, but further with the circuit board. The thinning is expected to develop a laminate that further reduces 101113167 201247415.

本發明係繁於上述問題而成者，其課題在於提供一種 曲、適合作為薄型電路基板之積層板。 / > H (解決問題之手段） 根據本电明’提供-種積層板，其係依序將 έ有弟一玻璃纖維基材層之第一預浸料、 之一層以上之 包含有機纖維基材層且不含玻璃纖維基材層 第二預浸料、及 含有第二玻璃纖維基材層之第三預浸料積層而卿 進而，根據本發明，提供—種包含上述本發日种^稽 電路基板。 積層板之 進而，根據本發明，提供—種於上述本發明中 搭載有半導體元件之铸體縣。 科基板上 於本發明中，藉由依序將含有第一玻璃纖維基材 浸料、包含有機纖維基材層且不含玻璃纖維基材層^預 之第二預浸料、及含有第二玻顿維基材層之第 層以上 並加以成形’可製伽第—玻賴維歸層及第料積層 Γ配置於積層板之外側的積層板。藉由將第 =玻，層配置於積層板之外側，二= 維基材層之·¥曲彈性模量，提高積層板之剛性，從/有機纖 層板之單體翹曲。 從而可減少積 (發明效果） 10Ι113Ι67 201247415 電路基板 根據本發明，可提供—種減少麵曲、適合作為薄型 之積層板。 【實施方式】 以下，利用圖式對本發明之實施形態進行說明。再者，於所 有圖式中’對㈣之構成要素標註共用之符號，適當省略說明。 (積層板） 首先’對本實施形態中之積層板之構成進行說明。圖i係表 示本實施形態巾之板之構成及錢造方法的剖面圖。積層 板100係依序將含有第一玻璃纖維基材層1〇1之第一預浸料 201、包含有機纖維基材層且*含玻輯維基材層之—層以上 之第二預浸料202、及含有第二玻璃纖維基材層1〇2之第三預 浸料203積層而獲得。 如上所述，藉由將第-玻璃纖維基材層及第二玻璃纖維基材 層配置於積層板之外側，而加強有機纖維基材層之料彈性模 量，提高積層板100之剛性，從而可減少積層板之 、 又，為了更有效地獲得防止積層板100之趣曲之效果，較佳 為於將第-玻璃纖維基材層1G1之中心線A1Μ二玻__ 3 基材層1〇2之中心線Α2的距離設為D1，將積層板1〇〇之厚度 設為D2，將該積層板中所含之第—玻璃纖維基材層、第= 璃纖維基材層及有機纖維基材層之合計數設為η(其中 以上之整數）時’滿足D2/n<Dl之條件。 此處’纖維基材層之數η表示第一玻璃纖維基材層、第二破 101113167 6 201247415 璃纖維基材層及一層以上之有機纖維基材層的合計數。如此， 可使膨脹應力向積層板10 0之中心方向移動，町進一步減少積 層板之單體赵曲。 <1 又，為了更有效地獲得防止積層板100之翹曲之效果，較佳 為相對於積層板之中心線B1分別對稱地配置第一玻璃纖維基 材層101及第二玻璃纖維基材層1〇2。 本貫施形態中之積層板之厚度較佳為0 025 mm以上且〇.6 mm以下。更佳為〇.〇4 mm以上且〇,4 mm以下，進而較佳為 〇.06111111以上且0.3 111111以下，尤佳為〇〇8111111以上且（)2111111 以下。若積層板之厚度為上述範圍内，則可獲得機械強度及生 產性之平衡特別優異，適合於薄型電路基板之積層板。 本實施形態中之積層板之面方向的線膨脹係數為_1〇卯江 °C以上且1 〇 ppm/t以下，較佳為_8 ppm/t：以上且8卯爪化^ 下，進而較佳為-5 ppm/°C以上且5 ppm/t：以下。若積芦板$ 線膨脹係數為上述範圍内，則可更有效地抑制形成有佈線圖舅 之電路基板、搭载有半導體元件之半導體封裝的翹曲或提高^ 度循環可靠性，進而可更有效提高將半導體封裝二次安妒之作 況的與母板之溫度循環可靠性。再者，本實施形態之^ : 數若無特別說明，則表示50t以上且150t以下之~囹 i Di 乾圍中之錦 杉脹係數的平均值。 (積層板之製造方法） 繼而’對積層板1〇〇之製造方法進行說明。 101113167 7 201247415 首先’分別準備含有第一玻璃纖維基材層101之第一預浸料 201、包含有機纖維基材層且不含玻璃纖維基材層之一層以上 之第二預浸料202、及含有第二玻璃纖維基材層1〇2之第三預 浸料203。 繼而，如圖l(a)所示，於預浸料之積層方向依序疊合第一預 浸料201、第二預浸料202及第三預浸料203。 * 此時，為了更有效地獲得防止積層板1〇〇之翹曲之效果，較 - 佳為以所獲得之積層板1〇〇滿足D2/n<D1之條件的方式疊合 各預浸料。藉由調整第-預浸料2〇1及第三預浸料2〇3中所含 之第一玻璃纖維基材層1〇丨及第二玻璃纖維基材層1〇2各自於 積層方向之位置或各樹脂層之厚度’可製作滿足上述條件之積 層板。 再者，作為積層方法，並無特別限定，例如可為分批式，亦 可連續地供給各預浸料，並使用真空層壓裝置、真空加壓襄置 專連續地積層β 最後，藉由對如上所述疊合之第一預浸料2(η、第二預浸料 202及第三預浸料203進行加熱、加壓而使其成形，可獲得如 圖1(b)所示之本實施形態中之積層板1〇〇。 作為上述加熱處理之方法，並無_限定，例如可使賴風， 乾燥裝置、紅外線加熱裝置、加熱輥裝置、平板狀之孰盤壓製. 裝置等而實施。於使賴風乾縣置或紅外線加齡置之情 況’可實質上不使㈣作用於上述經接合者而實施。又，於使 101113167 Λ 201247415 用加熱輥裝置或平板狀之熱健料置之情況，可藉由使既定 之壓力作用於上述經接合者而實施。 加熱處理時之溫度絲_限定，健為設定為所使用之樹 月曰熔融、且樹知之硬化反應不急遽地進行般之溫度範圍。作為 樹脂溶融之溫度，較佳為12代以上，更佳為l5(rc以上。又， 作為樹脂之硬化反應不急遽地進行之溫度，較佳為2坑以 下，更佳為23(TC以下。 又’加熱處料間係根據所使用之樹脂之種類等而不同，故 並無特別限定，例如可藉由處理3G分鐘以上且18()分鐘以下 而實施。 又，加壓之壓力並無特別限定，例如較佳為〇 2MPa以上且 5 MPa以下，更佳為2 Mpa以上且4以以以下。 繼而，對構成積層板1〇〇之材料加以詳細說明。 (第一預浸料及第三預浸料） 積層板100中所含之預浸料為使纖維基材含浸一種或兩種 以上之樹驗成物’其肢其半硬化而獲得之包含纖維基材層 與樹脂層之片狀的材料0此種構造之#狀材料之介電特性及高 溫多濕下之频、钱連接可#性等各種雜優異，適於製造 電路基板用之積層板，因而較佳。 作為使纖維基材含浸本實施形態中所使用之樹脂组成物之 方去’並無制蚊’例如可舉出：將樹驗成物轉於溶劑 中製備樹脂清漆，將纖維基材浸潰於樹脂清漆中之方法；利用 101113167 201247415 各種塗佈機進行塗佈之方法；藉由噴霧而喷附之方法；對附有 支持基材之樹脂層進行層壓之方法等。該等之中，較佳為將纖 維基材浸潰於樹脂清漆中之方法。藉此，可提高樹脂組成物對 於纖維基材之含浸性。再者，於將纖維基材浸潰於樹脂清漆中 之情況，可使用通常之含浸塗佈設備。 尤其於纖維基材之厚度為01 mm以下之情況，較佳為自纖 維基材之兩面以膜狀之樹脂層進行層壓的方法。藉此，可自如 地調節樹脂組成物對於纖維基材之含浸量，可進一步提高預浸 料之成形性。再者，於層壓膜狀之樹脂層之情況，更佳為使用 真空之層壓裝置等。 具體而言，作為製造預浸料之方法，例如可舉出以下方法。 圖2係表示預浸料之製造方法之剖面圖。此處，對預先製造 載體材料5a、5b，並將該載體材料5a、5b層壓於纖維基材u 上後’剝離載體膜之方法加以具體說明。 預先製造於載體膜上塗佈有第一樹脂組成物之載體材料 5a、及於載體膜上塗佈有第二樹脂組成物之載體材料讣。繼 而，使用真空層壓裝置60 ,於減壓下自纖維基材之兩面疊合 載體材料5a及5b，視需要利用加熱至樹脂組成物熔融之溫度 以上的層壓輥61進行接合，使纖維基材11含浸塗佈於载體膜 上之樹脂組成物。藉由在減壓下進行接合，即便於纖維基材 11之内部或載體材料5a、5b之樹脂層與纖維基材11的接合部 位存在未填充部分，亦可使其成為減壓孔隙或者實質上之真空 101113167 10 201247415 孔隙。 作為此種於減廢下接合纖維基材u與載體材料5a、5b之其 他裝置，例如可使用真空箱裝置、真空加壓農置等。 繼而，於接合纖維基材u與載體材料心％後，利用熱風 乾燥裝置62以塗佈於載體材料上之樹脂找融溫度以上的溫 度進行加減理。藉此，可域㈣於錢壓下之接合步驟中 產生之賴孔_。作為進行加熱處歡其他方法，例如可使 用紅外線加録置、加絲健、平·之熱缝製裝置等實 施。 於將載體材料5a、5b層壓於纖維基材u上後，剝離載體膜。 藉由該方法，於纖維基材11上載持樹脂組成物，可製成内藏 有纖維基材11之預浸料21。 又，若使用上述方法，則藉由調節載體材料5a及5b之樹脂 層之厚度’可f作纖維基材層於厚度方向分佈不均的不對稱之 預浸料。 除上述方法以外，可舉出參考文獻1(日本專利特開 漏-275337號公報)之段落_〜_中記载之方法等。以 下，一面參照圖11 一面加以具體說明。 於包含2台模塗機即第i塗佈裝置u與第2塗佈敦置化之 塗佈機中，以於該2台模塗機之間通過之方錢送纖維基材 3 ’對兩斜於各單面上分別塗佈樹脂清漆4。第丨塗佈裝置 la與第2塗佈裝置113可使用相同之模塗機，亦可使用不同者。 101113167 11 201247415 又如圖U所示般，第i塗佈裂置 可使用私塗佈機。又，塗侧 塗佈裝置1匕亦 佳為如圖11及圖12所亍^^ ㈣重複距離〇較 所示般不具有規定之距離 _，㈣可如圖13 且Sr置1a及第2塗佈裝置1b分別具有塗佈前端部2, 4㈣部2係於纖維基材3之寬度方向細長地形 2帛1塗佈裝£ 之塗佈前端部即第1塗佈前端部 咖，第2__之塗佈前端 於樹卜、^端部2b朝向纖維基材3的另―面突出。藉此， 盘綠〜、4之塗佈時，第1塗佈前端部2a經由樹脂清漆4 二rf材3之—面接觸，第2塗佈前端部㉛經由樹脂清漆 /、纖維基材3之另一面接觸。 第塗佈裂置la與第2塗佈裂置lb中喷出之樹脂清漆4 ^早位時間㈣出量可侧，亦可。藉由使樹脂清漆之 母早位時間之噴出量不同，可於纖維基材3之-面與另一面上 控制所土佈之樹脂清漆4的厚度，可容易地進行樹脂 層厚之調整。 利用乾燥細既定之溫度進行加熱，—面使所塗佈之樹脂清 漆4之,谷劑揮發—面使樹脂組成物半硬化，製造預浸料。 .主又’於韻轉材浸潰於脑清漆巾之情況，錄為於樹脂 清漆中所使用之溶劑對樹脂組成物中之樹脂成分表現出良好 的溶解性，亦可於不造成不良影響之範圍内使用不良溶劑。作 101113167 12 201247415 為表現出良好的溶解性之㈣，例如可舉出··摘、曱基乙基 .酮、曱基異丁基酮、環己酮、四氫咬喃、二甲基甲酿胺、二甲 基乙醯胺、二曱基亞硬、乙二醇、賽路蘇系、卡必醇系等。 較佳為構成預浸料之第—樹脂層之厚度ci通常為2.3_以 上且刚卿以下’第二樹脂層之厚度C2通常為—以上且 15 μιη以下。 此處所謂樹脂層之厚度，係指自纖維基材層與樹脂層之界面 至該樹脂層之概财面的麟，*包括卿基材層中含浸之 樹脂。 又’就使幅之控制變料之觀點而言，較佳為預浸料之第 二樹脂狀厚度Ο料—_相厚度α之比(Μ〗)為Ο」 <C2/C1 <G’9之範圍。再者，於本實施形態中，於構成預浸料 之樹脂層中’將相對較厚之樹脂層稱為第一樹脂層，將相對較 薄之樹脂層稱為第二樹脂層。再者，樹脂層之厚度例如可藉由 利用光學顯微鏡觀察預浸料之硬化後的剖面而測定。 樹脂清漆之_物成分並無特別限定，較佳為4q重量％以 ^且80重里％以下，更佳為5〇重量％以上且μ重量％以下。 糟此’可進一步提高樹脂清漆對於纖維基材之含浸性。藉由使 纖維基材含浸樹脂域物，紅既定溫度例如航卩上且· °C以下等進行乾燥，可獲得預浸料。 (玻璃纖維基材層） 作為第一玻璃纖維基材層101及第二玻璃纖維基材層1〇2 101113167 201247415 中所使用之纖維基材，並無特別限定，可舉出破璃布、玻璃+ 織布等玻璃纖維基材。該等之中，就強度、吸水率之觀點而t， 尤佳為玻璃布。又’藉由使用玻璃布’可進一步減小積層板之 熱膨脹係數。 作為本實施形態中所使用之玻璃纖維基材，基重(每丨m2之 纖維基材之重量)較佳為4 g/m2以上且150 g/m2以下，更佳^ 8 g/m2以上且110 g/m2以下，進而較佳為12 g/m2以上且6〇 g/m2 以下，進而較佳為12 g/m2以上且30 g/m2以下，尤佳為12 g/m2 以上且24 g/m2以下。 若基重為上述上限值以下，則纖維基材中之樹脂組成物之含 浸性提高’可抑制股線孔隙或絕緣可靠性之下降的產生。又， 可容易地利用二氧化碳、UV、準分子等雷射形成通孔。又， 若基重為上述下限值以上，則可提高玻璃纖維基材或積層板之 強度。其結果為可提高操作性，或使預浸料之製作變容易，或 抑制基板之翹曲減少效果的下降。 於上述玻璃纖維基材中，較佳為線膨脹係數為6 ppm/<3c以下 之玻璃纖維基材，更佳為3.5 ppm/°C以下之玻璃纖維基材。藉 由使用具有此種線膨脹係數之玻璃纖維基材，可進一步抑制本 貫施形態之積層板之輕曲。 進而’於本實施形態中所使用之纖維基材之楊氏模數較佳為 60 GPa以上且1〇〇 GPa以下，更佳為65 Gpa以上且92 GPa 以下’進而較佳為86GPa以上且92(}Pa以下。藉由使用具有 101113167 201247415 此種楊氏模數之玻璃纖維基材，可有效地抑制例如由半導體安 4日卞之回谭熱而引起之佈線板的變形，故電子零件之連接可靠 性進一步提高。 又，本實施形態中所使用之玻璃纖維基材較佳為於1 MHz 之介電常數為3.8以上且7.0以下，更佳為3.8以上且6 8以下， 進而較佳為3.8以上且5.5以下。藉由使用具有此種介電常數 之玻璃纖維基材，可進一步降低積層板之介電常數，適合於使 用高速信號之半導體封裝。 作為具有如上所述之線膨脹係數、楊氏模數及介電常數之玻 璃纖維基材，例如可合適地使用E玻璃、s玻璃、NE玻璃、τ 玻璃、UN玻璃及石英玻璃等。該等之中，較佳為τ玻璃或s 玻璃。 積層板100中之第一玻璃纖維基材層101及第二玻璃纖維基 材層102係於上述玻璃纖維基材中分別含浸樹脂組成物而成 之層，通常可認為纖維基材層之厚度為纖維基材之厚度。 玻璃纖維基材層之厚度並無特別限定，較佳為5 _以上且 100 μιη以下’更佳為10 μιη以上且6〇哗以下，進而較佳為 Π叫以上幻5 _町。藉由使用具有此種厚度之玻璃纖維 基材’預浸料製造時之操作性進一步提高，尤其他曲減少效 果明顯。 右玻璃纖維基材層之厚度為上述上限值以下，則纖維基材中 之樹脂組成物之含浸性提高，可抑制股線孔隙或絕緣可靠性之 101113167 15 201247415 下降之產生，又，可容易地利用二氧化碳、uv、準分子等雷 射形成通孔。又，若玻璃纖維基材層之厚度為上述下限值以 上，則可提向纖維基材或預浸料之強度。其結果為可提高操作 性，或使預浸料之製作變容易，或抑制基板之翹曲減少效果的 下降。 玻璃纖維基材之使用片數不限於一片，亦可重疊使用數片較 薄之纖維基材。再者，於重疊使用數片較薄之纖維基材之情 況’只要其合計厚度滿足上述範圍即可。 積層板100中之第一玻璃纖維基材層101及第二玻璃纖維基 材層102可相同，亦可不同。 積層板100具有使玻璃纖維基材等纖維基材含浸樹脂組成 物而成之纖維基材層，藉此可獲得低線膨脹率、高彈性模數優 異且薄型之多層佈線板，且於在該多層佈線板上搭載有半導體 晶片之半導體封裝中，可獲得翹曲較少且耐熱性、熱衝擊性之 可靠性優異者。其中，藉由具有使玻璃纖維基材含浸樹脂組成 物而成之纖維基材層，可達成高強度、低吸水、低熱膨脹。 (樹脂組成物） 作為含浸於玻璃纖維基材中之樹脂組成物，並無特別限定， 較佳為具有低線膨脹率及高彈性模數、且熱衝擊性之可靠性優 異者。樹脂組成物較佳為含有熱硬化性樹脂。 (熱硬化性樹脂） 作為熱硬化性樹脂’並無特別限定，較佳為具有低線膨脹率 101113167 16 201247415 及尚彈性模數、且熱衝擊性之可靠性優異者。 又，熱硬化性樹脂之玻璃轉移溫度較佳為16〇亡以上且 °c以下’更佳為im:以上幻崎以下。藉岐料== 玻璃轉移溫度之熱硬化性難，可獲得無料錫回烊耐熱性進 一步提高之效果。 作為具體之熱硬化性樹脂，例如可舉出：苯_盤清漆樹 脂、甲龄祕清賴脂、伽A祕清漆樹鱗_清漆型 紛樹脂，未改質之可溶祕_脂，以桐油、亞麻籽油、胡桃 油等改質而成之油改質可溶祕_脂等可溶_型盼樹脂 ⑽樹脂；鑛A型環氧樹脂、魏F型環氧樹脂、雙齡$ 型環氧樹脂、雙㈣型環氧樹脂、㈣M型環氧樹脂、雙紛 P型環氧樹脂、雙盼Z型環氧樹脂等雙_環氧樹脂，苯祕 盤清漆型環氧樹脂、m祕清漆型環氧樹料_清漆型環 氧樹脂，鮮型環氧樹脂、聯料絲型環氧觸、芳基伸烧 基型環氧樹脂、萘型環氧樹脂、蒽型環氧樹脂、苯氧基型環氧 樹月曰-%<戊-烯型#氧樹脂、降$烯型環氧樹脂、金剛烧型 環氧樹脂、第型環氧樹脂等環氧樹脂；脲(_)樹脂、三聚氮 胺樹脂等具有三_之樹脂，不飽和聚賴脂，雙馬來酿亞胺 樹脂，聚胺基曱酸乙_旨，鄰笨H稀㈣樹脂，聚石夕 氧樹脂，具有苯并啊環之樹脂，氰酸咖旨，聚醯亞胺樹脂， 聚醯胺醯亞胺伽旨’笨并環谓樹脂等。 可單獨使用料巾之—種，亦可個具林同«平均分子 101113167 17 201247415 里之兩種以上’亦可將—種或兩種以上與該等之預聚物併用。 該等之中，尤佳為氰酸酯樹脂（包含氰酸酯樹脂之預聚物）。 藉由使用氰酸酯樹脂，可減小積層板之熱膨脹係數。進而，氰 酸酯樹脂之電氣特性(低介電常數、低介電正切）、機械強度等 亦優異^ 氰酸酯樹脂例如可使用使齒化氰化合物與酚類反應而成 者、或視需要以加熱等方法而預聚物化者等。具體可舉出：酚 醛清漆型氰酸酯樹脂、雙酚A型氰酸酯樹脂、雙酚E型氰酸 醋樹脂、四曱基雙酚F型氰酸酯樹脂等雙酚型氰酸酯樹脂，由 蔡紛芳烧基型之多元萘酚類與函化氰之反應而獲得之氰酸酯 樹脂’二環戊二烯型氰酸酯樹脂，聯苯烷基型氰酸酯樹脂等。 該等之中’較佳為酚醛清漆型氰酸酯樹脂。藉由使用酚醛清漆 型氣酸醋樹脂’交聯密度增加，耐熱性提高。因此，可提高積 層板之阻燃性。 作為其理由’可舉出酚醛清漆型氰酸酯樹脂於硬化反應後形 成三°井環°進而’ 一般認為其原因在於：酚醛清漆型氰酸酯樹 脂於其構造方面而言，苯環之比例較高，容易碳化。進而，即 便為將積層板之厚度設定為〇 6 mm以下之情況，包含使酚醛 清漆型氰酸酯樹脂硬化而製作之樹脂層的積層板亦具有優異 之剛性。尤其係此種積層板於加熱時之剛性優異，因此半導體 元件安裝時之可靠性亦優異。 作為紛路清漆型氰酸g旨樹脂，例如可使用下述通式⑴所示 101113167 18 201247415 者。 [化i]The present invention has been made in view of the above problems, and an object thereof is to provide a laminated board suitable for use as a thin circuit board. / > H (means for solving the problem) According to the present invention, a laminated board is provided, which is a first prepreg of a glass fiber substrate layer, and an organic fiber base of one or more layers. a material layer comprising no second prepreg of a glass fiber substrate layer and a third prepreg layer comprising a second glass fiber substrate layer. Further, according to the present invention, the present invention is provided Circuit board. Further, according to the present invention, there is provided a cast county in which a semiconductor element is mounted in the above-described invention. In the present invention, the second prepreg containing the first glass fiber substrate dipping, the organic fiber base material layer and the glass fiber substrate layer is not included, and the second glass The first layer of the base layer of the Dunwei substrate is formed and formed into a laminated plate on the outer side of the laminated plate by the gamma-Bolivian layer and the first layer of the layer. By arranging the layer = glass, the layer is disposed on the outer side of the laminate, and the elastic modulus of the base layer is increased, and the rigidity of the laminate is increased to warp the monomer from the / organic fiber laminate. Therefore, the product can be reduced. (Effect of the invention) 10 Ι 113 Ι 67 201247415 Circuit board According to the present invention, it is possible to provide a laminated board which is suitable for use as a thin type. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the constituent elements of the pair (4) are denoted by the same reference numerals, and the description thereof will be omitted as appropriate. (Laminated Board) First, the configuration of the laminated board in the present embodiment will be described. Figure i is a cross-sectional view showing the structure of the sheet of the embodiment and the method of making the money. The laminated board 100 sequentially connects the first prepreg 201 containing the first glass fiber base material layer 1〇1, the second prepreg containing the organic fiber base material layer and the layer containing the glass matrix layer. 202, and a third prepreg 203 containing the second glass fiber substrate layer 1〇2 is obtained by laminating. As described above, by disposing the first glass fiber base material layer and the second glass fiber base material layer on the outer side of the laminated plate, the elastic modulus of the organic fiber base material layer is reinforced, and the rigidity of the laminated plate 100 is improved. In order to more effectively obtain the effect of preventing the smear of the laminated board 100, it is preferable to use the center line A1 of the first glass fiber base material layer 1G1 to form a substrate layer 1 〇 The distance between the center line Α2 of 2 is D1, the thickness of the laminated board 1〇〇 is D2, and the first glass fiber base material layer, the first glass fiber base material layer, and the organic fiber base contained in the laminated board are used. When the total count of the material layers is set to η (the integer above), the condition of satisfying D2/n < Dl is satisfied. Here, the number η of the fiber base material layer indicates the total count of the first glass fiber base material layer, the second broken 101113167 6 201247415 glass fiber base material layer, and one or more organic fiber base material layers. In this way, the expansion stress can be moved toward the center of the laminate 10, and the monolithic curvature of the laminate can be further reduced. <1 Further, in order to more effectively obtain the effect of preventing warpage of the laminated board 100, it is preferable that the first glass fiber base material layer 101 and the second glass fiber base material are symmetrically arranged with respect to the center line B1 of the laminated board, respectively. Layer 1〇2. The thickness of the laminate in the present embodiment is preferably 0 025 mm or more and 〇.6 mm or less. More preferably, it is 4 mm or more and 〇, 4 mm or less, more preferably 061.06111111 or more and 0.3111111 or less, and particularly preferably 〇〇8111111 or more and () 2111111 or less. When the thickness of the laminate is within the above range, a balance between mechanical strength and productivity can be obtained, which is suitable for a laminate of a thin circuit board. The coefficient of linear expansion in the surface direction of the laminated plate in the present embodiment is _1 〇卯 ° ° C or more and 1 〇 ppm / t or less, preferably _ 8 ppm / t: or more and 8 卯 claws, and further It is preferably -5 ppm/°C or more and 5 ppm/t: or less. When the coefficient of expansion of the slab of the slab is within the above range, it is possible to more effectively suppress the warpage of the circuit board on which the wiring pattern is formed, the warpage of the semiconductor package in which the semiconductor element is mounted, or improve the reliability of the cycle, and thus it is more effective. Improve the temperature cycling reliability of the motherboard and the mother board. In addition, unless otherwise indicated, the numerical value of the present embodiment indicates the average value of the expansion coefficient of the 囹 i Di dry circumference of 50 t or more and 150 t or less. (Manufacturing Method of Laminated Sheet) Next, a method of manufacturing the laminated board 1A will be described. 101113167 7 201247415 Firstly, a first prepreg 201 containing a first glass fiber base material layer 101, a second prepreg 202 containing an organic fiber base material layer and not containing one or more layers of a glass fiber base material layer, and A third prepreg 203 comprising a second glass fiber substrate layer 1〇2. Then, as shown in Fig. 1(a), the first prepreg 201, the second prepreg 202, and the third prepreg 203 are sequentially laminated in the lamination direction of the prepreg. * At this time, in order to more effectively obtain the effect of preventing warpage of the laminated board 1 , it is preferable to superpose each prepreg in such a manner that the obtained laminated board 1 〇〇 satisfies the condition of D2 / n < D1 . By adjusting the first glass fiber base material layer 1〇丨 and the second glass fiber base material layer 1〇2 contained in the first prepreg 2〇1 and the third prepreg 2〇3, respectively, in the lamination direction The position or the thickness of each resin layer can be used to produce a laminate which satisfies the above conditions. Further, the lamination method is not particularly limited, and for example, it may be a batch type, or each prepreg may be continuously supplied, and a vacuum lamination device or a vacuum pressurizing device may be used to continuously laminate β finally. The first prepreg 2 (n, the second prepreg 202, and the third prepreg 203 which are superposed as described above are heated and pressurized to be shaped, and as shown in FIG. 1(b), can be obtained. In the present embodiment, the method of heat treatment is not limited, and for example, it can be used to press a wind, a drying device, an infrared heating device, a heating roll device, a flat plate, a device, or the like. In the case of the Laifeng dry county or the infrared ageing, the invention can be carried out without substantially acting on the above-mentioned joints. Further, 101113167 Λ 201247415 is used to heat the roller device or the flat-shaped hot material. In this case, it can be carried out by applying a predetermined pressure to the above-mentioned jointed person. The temperature of the heat treatment is limited, and the setting is such that the used tree is melted, and the hardening reaction of the tree is not urgently performed. Temperature range. The temperature at which the fat is melted is preferably 12 or more, more preferably 15 or more (rc or more. Further, the temperature at which the curing reaction of the resin is not impatient is preferably 2 pits or less, more preferably 23 or less. The term "heating" varies depending on the type of the resin to be used and the like, and is not particularly limited. For example, it can be carried out by treatment for 3 G minutes or more and 18 (minute minutes or less). For example, it is preferably 〇2 MPa or more and 5 MPa or less, more preferably 2 Mpa or more and 4 or less. Next, the material constituting the laminated board 1 加以 will be described in detail. (First prepreg and third prepreg The prepreg contained in the laminated board 100 is a sheet material containing a fibrous base material layer and a resin layer obtained by impregnating the fibrous base material with one or more kinds of tree test products. 0. The dielectric properties of the #-form material of such a structure, and the high frequency and high humidity, the frequency, the money connection, and the like are excellent, and are suitable for the production of a laminate for a circuit board. The side of the resin composition used in the present embodiment For example, a method of preparing a resin varnish by converting a tree test substance into a solvent, and dipping the fiber base material into the resin varnish; and applying the coating method by using various coating machines of 101113167 201247415 a method of spraying by spraying, a method of laminating a resin layer with a supporting substrate, etc. Among these, a method of impregnating a fibrous substrate into a resin varnish is preferred. The impregnation property of the resin composition with respect to the fiber base material can be improved. Further, in the case where the fiber base material is impregnated into the resin varnish, a usual impregnation coating apparatus can be used. In particular, the thickness of the fiber base material is 01 mm or less. In other cases, a method of laminating a film-like resin layer from both sides of the fiber substrate is preferred. Thereby, the impregnation amount of the resin composition to the fiber substrate can be freely adjusted, and the formation of the prepreg can be further improved. Sex. Further, in the case of laminating a film-like resin layer, a vacuum laminating apparatus or the like is more preferably used. Specifically, as a method of manufacturing a prepreg, the following methods are mentioned, for example. Fig. 2 is a cross-sectional view showing a method of manufacturing a prepreg. Here, a method of preliminarily manufacturing the carrier materials 5a, 5b and laminating the carrier materials 5a, 5b on the fiber substrate u and then peeling off the carrier film will be specifically described. The carrier material 5a coated with the first resin composition on the carrier film and the carrier material 涂布 coated with the second resin composition on the carrier film are prepared in advance. Then, using the vacuum laminating apparatus 60, the carrier materials 5a and 5b are laminated from both sides of the fiber base material under reduced pressure, and if necessary, joining is carried out by laminating rolls 61 heated to a temperature higher than the melting temperature of the resin composition to form a fiber base. The material 11 is impregnated with a resin composition coated on a carrier film. By bonding under reduced pressure, even if there is an unfilled portion in the interior of the fibrous base material 11 or the joint portion of the resin layer of the carrier materials 5a, 5b and the fibrous base material 11, it can be made into a reduced pressure pore or substantially Vacuum 101113167 10 201247415 Porosity. As such other means for joining the fibrous base material u and the carrier materials 5a, 5b under reduced waste, for example, a vacuum box apparatus, vacuum pressurization, or the like can be used. Then, after the fiber base material u and the carrier material core are joined, the hot air drying device 62 is used for addition and subtraction at a temperature higher than the resin tempering temperature applied to the carrier material. Thereby, the domain (4) can be generated in the bonding step of the money pressing. As another method of performing the heating, for example, an infrared ray recording, a wire bonding, a flat heat sewing device, or the like can be used. After the carrier materials 5a, 5b are laminated on the fibrous substrate u, the carrier film is peeled off. By this method, the resin composition is placed on the fibrous base material 11, whereby the prepreg 21 in which the fibrous base material 11 is contained can be obtained. Further, by using the above method, the thickness of the resin layer of the carrier materials 5a and 5b can be adjusted to be an asymmetrical prepreg in which the fiber base material layer is unevenly distributed in the thickness direction. In addition to the above-mentioned method, the method described in the paragraph _~_ of the reference 1 (Japanese Patent Laid-Open No. 275337) is exemplified. Hereinafter, one side will be specifically described with reference to Fig. 11 . In a coating machine comprising two i-coating machines, i.e., the i-th coating device u and the second coating, the fiber substrate is passed between the two die-coating machines. The resin varnish 4 was applied to each of the sides. The same coating machine can be used for the second coating device la and the second coating device 113, and different ones can be used. 101113167 11 201247415 As shown in Fig. U, the i-coating split can use a private coater. Further, the coating side coating apparatus 1 is preferably as shown in Figs. 11 and 12 (4). The repeating distance 不 does not have a predetermined distance _, and (4) can be as shown in Fig. 13 and Sr is set to 1a and the second coating. Each of the cloth device 1b has a coating end portion 2, and the 4 (four) portion 2 is formed in a longitudinal direction of the fiber base material 3, and the coating end portion, that is, the first coating end portion, is the second coating front end portion. The coating front end protrudes toward the other side of the fiber base material 3 at the end portion 2b of the tree. With this, in the application of the disc green to the fourth, the first coating tip end portion 2a is in surface contact via the resin varnish 4 and the second coating tip portion 31, and the second coating tip end portion 31 is via the resin varnish/fiber substrate 3 The other side is in contact. The coating cleavage la and the resin varnish sprayed out in the second coating crack lb 4 may be on the side of the early time (four). By varying the discharge amount of the resin varnish in the early morning time, the thickness of the resin varnish 4 of the soil cloth can be controlled on the surface and the other surface of the fiber base material 3, and the thickness of the resin layer can be easily adjusted. The prepreg is produced by heating to a predetermined temperature and drying the surface to coat the applied resin varnish 4, and volatilizing the surface to make the resin composition semi-hardened. In the case where the main rhyme material is impregnated into the cerebral varnish towel, the solvent used in the resin varnish shows good solubility in the resin component in the resin composition, and can also cause no adverse effects. Use a poor solvent within the range. 101113167 12 201247415 In order to exhibit good solubility (IV), for example, extract, mercaptoethyl ketone, decyl isobutyl ketone, cyclohexanone, tetrahydroanion, dimethyl ketone can be mentioned. Amine, dimethylacetamide, dimercapto, hard, ethylene glycol, serotonin, carbitol, and the like. Preferably, the thickness ci of the first resin layer constituting the prepreg is usually 2.3 Å or more and the thickness C2 of the second resin layer is usually -10 or more and 15 μm or less. Here, the thickness of the resin layer means a lining from the interface between the fibrous base material layer and the resin layer to the surface of the resin layer, and includes a resin impregnated in the base material layer. Further, from the viewpoint of controlling the width of the web, it is preferable that the ratio of the second resin-like thickness of the prepreg to the phase thickness α (Μ) is Ο" <C2/C1 <G The range of '9. Further, in the present embodiment, the relatively thick resin layer is referred to as a first resin layer and the relatively thin resin layer is referred to as a second resin layer in the resin layer constituting the prepreg. Further, the thickness of the resin layer can be measured, for example, by observing the cross section of the prepreg after curing by an optical microscope. The content of the resin varnish is not particularly limited, but is preferably 4% by weight to 8% by weight, more preferably 5% by weight or less and more preferably 5% by weight or less. This can further improve the impregnation of the resin varnish to the fibrous substrate. The prepreg can be obtained by impregnating the fibrous substrate with a resin domain and drying the red predetermined temperature, for example, on a crucible and below °C. (Glass fiber base material layer) The fiber base material used in the first glass fiber base material layer 101 and the second glass fiber base material layer 1〇2 101113167 201247415 is not particularly limited, and examples thereof include a glass cloth and glass. + Glass fiber substrates such as woven fabrics. Among these, from the viewpoint of strength and water absorption, t is particularly preferred as a glass cloth. Further, the thermal expansion coefficient of the laminated plate can be further reduced by using a glass cloth. As the glass fiber base material used in the present embodiment, the basis weight (weight of the fiber base material per 丨m2) is preferably 4 g/m2 or more and 150 g/m2 or less, more preferably 8 g/m2 or more. 110 g/m2 or less, further preferably 12 g/m2 or more and 6 〇g/m2 or less, further preferably 12 g/m2 or more and 30 g/m2 or less, particularly preferably 12 g/m2 or more and 24 g or less /m2 or less. When the basis weight is at most the above upper limit value, the impregnation property of the resin composition in the fiber base material is improved, and the occurrence of a decrease in strand void or insulation reliability can be suppressed. Further, the through holes can be easily formed by using a laser such as carbon dioxide, UV or excimer. Further, when the basis weight is at least the above lower limit value, the strength of the glass fiber base material or the laminated plate can be improved. As a result, the operability can be improved, the production of the prepreg can be facilitated, or the effect of reducing the warpage of the substrate can be suppressed. In the above glass fiber substrate, a glass fiber substrate having a coefficient of linear expansion of 6 ppm / < 3 c or less is preferable, and a glass fiber substrate of 3.5 ppm / ° C or less is more preferable. By using a glass fiber base material having such a linear expansion coefficient, it is possible to further suppress the buckling of the laminate of the conventional embodiment. Further, the Young's modulus of the fibrous base material used in the present embodiment is preferably 60 GPa or more and 1 〇〇 GPa or less, more preferably 65 GPa or more and 92 GPa or less, and further preferably 86 GPa or more and 92. (}Pa or less. By using a glass fiber substrate having such a Young's modulus as 101113167 201247415, it is possible to effectively suppress deformation of the wiring board caused by, for example, the semiconductor heat, so the electronic parts Further, the glass fiber substrate used in the present embodiment preferably has a dielectric constant of 3.8 or more and 7.0 or less, more preferably 3.8 or more and 68 or less, and more preferably 3.8 or more, and more preferably 6.8 or less. 3.8 or more and 5.5 or less. By using a glass fiber substrate having such a dielectric constant, the dielectric constant of the laminated board can be further reduced, and it is suitable for a semiconductor package using a high-speed signal. As a linear expansion coefficient as described above, For the glass fiber substrate having a Young's modulus and a dielectric constant, for example, E glass, s glass, NE glass, τ glass, UN glass, quartz glass, or the like can be suitably used. Among them, τ glass or s is preferable. glass The first glass fiber base material layer 101 and the second glass fiber base material layer 102 in the laminated board 100 are each a layer in which the resin composition is impregnated into the glass fiber base material, and the fiber base material layer is generally considered to be The thickness is the thickness of the fiber base material. The thickness of the glass fiber base material layer is not particularly limited, but is preferably 5 Å or more and 100 μm or less, more preferably 10 μmη or more and 6 〇哗 or less, and further preferably yaw or more. The operability of the prepreg by using a glass fiber substrate having such a thickness is further improved, and in particular, the effect of reducing the curvature is remarkable. The thickness of the right glass fiber substrate layer is below the above upper limit value. In addition, the impregnation property of the resin composition in the fiber base material is improved, and the generation of 101113167 15 201247415 of the strand void or insulation reliability can be suppressed, and the through hole can be easily formed by using a laser such as carbon dioxide, uv or excimer. Further, when the thickness of the glass fiber base material layer is at least the above lower limit value, the strength of the fiber base material or the prepreg can be improved. As a result, the workability can be improved, or the production of the prepreg can be changed. It is easy to suppress or reduce the warpage reduction effect of the substrate. The number of sheets of the glass fiber substrate is not limited to one piece, and a plurality of thin fiber substrates may be overlapped. Further, a plurality of thin fibers are used in an overlapping manner. In the case of the base material, the total thickness may satisfy the above range. The first glass fiber base material layer 101 and the second glass fiber base material layer 102 in the laminated plate 100 may be the same or different. The laminated plate 100 has a glass. A fiber base material layer in which a fiber base material such as a fiber base material is impregnated with a resin composition, thereby obtaining a multilayer wiring board having a low linear expansion ratio and a high elastic modulus and having a low thickness, and is mounted on the multilayer wiring board In the semiconductor package of a semiconductor wafer, it is possible to obtain less warpage and excellent reliability of heat resistance and thermal shock resistance. Among them, high strength, low water absorption, and low thermal expansion can be achieved by having a fibrous base material layer obtained by impregnating a glass fiber substrate with a resin composition. (Resin composition) The resin composition impregnated into the glass fiber base material is not particularly limited, and it is preferably one having a low linear expansion ratio and a high elastic modulus and excellent thermal shock resistance. The resin composition preferably contains a thermosetting resin. (thermosetting resin) The thermosetting resin is not particularly limited, and preferably has a low linear expansion ratio of 101113167 16 201247415 and an excellent modulus of elasticity and excellent thermal shock resistance. Further, the glass transition temperature of the thermosetting resin is preferably 16% or more and °C or less, more preferably im: or less. Borrowing material == The glass transition temperature is difficult to be thermally hardened, and the effect of further improving the heat resistance of the tin-free material can be obtained. Specific examples of the thermosetting resin include benzene-plate varnish resin, gingival clear lyophile, gamma A secret varnish tree scale _ varnish type resin, unmodified soluble _ fat, tung oil , linseed oil, walnut oil, etc. modified oil modified soluble secret _ fat and other soluble _ type expectant resin (10) resin; mine A type epoxy resin, Wei F type epoxy resin, double age $ type ring Oxygen resin, double (tetra) epoxy resin, (four) M-type epoxy resin, double-sided P-type epoxy resin, double-preemptive Z-type epoxy resin, etc., double _ epoxy resin, benzene secret varnish type epoxy resin, m secret varnish Epoxy resin _ varnish type epoxy resin, fresh epoxy resin, conjugated wire type epoxy touch, aryl extended base type epoxy resin, naphthalene type epoxy resin, bismuth type epoxy resin, phenoxy Epoxy resin such as epoxide-type pentoxide-% oxy-resin, olefinic epoxy resin, diamond-fired epoxy resin, and epoxy resin; urea (_) resin, three A polyamine resin, etc., has a resin, an unsaturated polylysate, a bismaleimide resin, a polyamine ruthenium phthalate, a porphyrin H (tetra) resin, a polysulfide resin, Benzo rings ah resin, cyanate coffee purpose, polyimide resin, polyamide-imide purpose gamma 'stupid ring and that resin. The type of the towel may be used alone, or one or more of the above-mentioned "average molecules 101113167 17 201247415" may be used in combination with the prepolymer. Among these, a cyanate resin (prepolymer containing a cyanate resin) is particularly preferred. By using a cyanate resin, the coefficient of thermal expansion of the laminate can be reduced. Further, the cyanate resin is excellent in electrical properties (low dielectric constant, low dielectric tangent), mechanical strength, and the like. The cyanate resin can be used, for example, by reacting a toothed cyanide compound with a phenol, or as needed. Prepolymerized by heating or the like. Specific examples thereof include a bisphenol type cyanate resin such as a novolak type cyanate resin, a bisphenol A type cyanate resin, a bisphenol E type cyanate resin, and a tetradecyl bisphenol F type cyanate resin. A cyanate resin, a dicyclopentadiene type cyanate resin, a biphenylalkyl type cyanate resin, etc. obtained by a reaction of a polyheptaphenol group and a functional cyanide of a Clay-based base. Among these, 'the novolak type cyanate resin is preferable. By using a novolac type gas vinegar resin, the crosslinking density is increased, and heat resistance is improved. Therefore, the flame retardancy of the laminate can be improved. The reason for this is that the novolak-type cyanate resin forms a three-well ring after the hardening reaction. Further, it is considered that the reason is that the proportion of the phenol ring-type cyanate resin in terms of its structure is benzene ring. Higher, easy to carbonize. Further, even in the case where the thickness of the laminate is set to 〇 6 mm or less, the laminate including the resin layer produced by curing the novolak-type cyanate resin also has excellent rigidity. In particular, since such a laminated board is excellent in rigidity at the time of heating, the reliability of mounting a semiconductor element is also excellent. For example, 101113167 18 201247415 represented by the following general formula (1) can be used as the varnish-type cyanate-based resin. [i]

通式⑴所示之酚醛清漆型氰酸酯樹脂的平均重複單位η為 任意之整數。η之下限並無特別限定，較佳為1以上，更佳為 2以上。若η為上述下限值以上，則酚醛清漆型氰酸酯樹脂之 耐熱性提高’可抑制於加熱時低聚體脫離、揮發。又，η之上 限並無特別限定’較佳為1〇以下，更佳為7以下。若η為上 述上限值以下’則可抑制熔融黏度增高，可抑制樹脂層之成形 性下降。 又，作為氰酸酯樹脂’亦可合適地使用下述通式(Η)所示之 萘酚型氰酸酯樹脂。下述通式(II)所示之萘酚型氰酸酯樹脂例 如係使萘酴芳烧基樹脂與氰酸進行縮合而獲得，上述芳烧基樹 脂係藉由α-备盼或者β-奈紛荨萘盼類與對苯二曱醇、α 二曱 氧基-對二曱苯、1，4·二(2·經基_2·丙基)笨等之反應而獲得。通 .式⑻之η較佳為以下。於η為10以下之情況，樹脂黏度 • $會增高，對於纖絲材之含浸性良好，有不使作為積層板之 性能下降之傾向。又’於合成時不易弓丨起分子内聚合，有水洗 時之分液性提高，可防止產量之下降之傾向 101113167 19 201247415 [化2]The average repeating unit η of the novolac type cyanate resin represented by the formula (1) is an arbitrary integer. The lower limit of η is not particularly limited, but is preferably 1 or more, and more preferably 2 or more. When η is at least the above lower limit value, the heat resistance of the novolac type cyanate resin is improved, and the oligomer can be prevented from being detached and volatilized during heating. Further, the upper limit of η is not particularly limited, and is preferably 1 or less, more preferably 7 or less. When η is less than or equal to the above upper limit, the increase in melt viscosity can be suppressed, and the decrease in moldability of the resin layer can be suppressed. Further, as the cyanate resin ‘, a naphthol type cyanate resin represented by the following formula (Η) can be suitably used. The naphthol type cyanate resin represented by the following formula (II) is obtained, for example, by condensing a naphthoquinone aryl-based resin with cyanic acid, and the above-mentioned aryl-based resin is obtained by α-preparation or β-na It is obtained by reacting with naphthol, α-dimethoxy-p-diphenyl, 1,4·bis(2·yl 2·propyl) and the like. The η of the formula (8) is preferably the following. When the η is 10 or less, the resin viscosity is increased by $, and the impregnation property of the filament material is good, and the performance as a laminate is not lowered. Further, it is not easy to smash the intramolecular polymerization during the synthesis, and the liquid separation property is improved when the water is washed, and the tendency to prevent the decrease in the yield can be prevented. 101113167 19 201247415 [Chemical 2]

(式中，R表示氫原子或曱基，n表示1以上之整數）。 又作為氮酸g旨樹脂，亦可合適地使用下述通式(HI)所示之 一環戊一埽型氰酸酯樹脂。下述通式(III)所示之二環戊二烯型 氰酸酯樹脂較佳為下述通式(111)之n為〇以上且8以下。於^ 為8以下之情況，樹脂黏度不會增高，對於纖維基材之含浸性 良好，可防止作為積層板之性能之下降。又，藉由使用二環戊 一稀型氰酸醋樹脂，低吸濕性及财化學品優異。 [化3](wherein R represents a hydrogen atom or a fluorenyl group, and n represents an integer of 1 or more). Further, as the nitrogen acid g-based resin, a cyclopenta-ylidene type cyanate resin represented by the following formula (HI) can be suitably used. The dicyclopentadiene type cyanate resin represented by the following formula (III) is preferably a compound of the following formula (111): n is not less than 8 and not more than 8. When the thickness is 8 or less, the resin viscosity is not increased, and the impregnation property to the fiber base material is good, and the deterioration of the performance as a laminate can be prevented. Further, by using a dicyclopentanthene-type cyanic acid vinegar resin, it is excellent in low hygroscopicity and chemical properties. [Chemical 3]

(η表示0以上且8以下之整數）。 氰酸酯樹脂之重量平均分子量(Mw)之下限並無特別限定， 較佳為Mw為500以上，更佳為Mw為600以上。若Mw為 上述下限值以上，則於製作絕緣樹脂層之情況，可抑制黏性之 產生，從而可抑制樹脂層彼此接觸時相互附著或發生樹脂之轉 印。又，Mw之上限並無特別限定，較佳為Mw為4,50〇以下， 尤佳為Mw為3,000以下。又，若Mw為上述上限值以下，則 可抑制反應變快，於製成電路基板之情況，可抑制發生成形不 101113167 20 201247415 良或層間剝離強度下降。 氰酸酯樹脂等之Mw例如可藉由凝膠滲透層析法(Gpc， Permeation Chromatograpliy’標準物質：聚苯乙烯換算)加以測 定 又，氰酸醋樹脂可單獨使用一種，亦可併用具有不同_ 之兩種以上’亦可將-種或兩種以上與該等之預聚物併用。 樹脂組成物中所含之熱硬化性樹脂之含量只要視其目的而 適當調整即可，並無特別限定，較佳為基於樹脂組成物總體而 為5質量。/。以上且90質量％以下，更佳為1〇質量％以上且8〇 質量％以下，尤佳為20質量％以上且5G f量％以下。若熱硬 化性樹脂之含量為上述下限值以上，則操作性提高，容易形成 樹脂層。若熱硬化賴脂之含㈣上述上限值町，則存在樹 脂層之強度或阻雜提高，或樹脂層之線膨脹係數下降而積層 板之翹曲的減少效果提高之情況。 作為熱硬化性樹脂’除了使用氰酸醋樹脂(尤其係祕清漆 型亂酸賴脂、蔡齡型氰酸酯樹脂、二環戊二烯型氰酸醋樹脂） 以外，可使用環氧樹脂(實質上不含齒素原子），亦可併用。作 為環氧樹脂，例如可舉出：雙紛A型環氧樹脂、魏F型環 ^旨、㈣嶋她旨、物峨_、恤型 ^納旨型環氧樹脂、雙W型環氧樹脂等雙酴型環 等紛祕β漆型環氧樹脂、甲紛祕清漆型環氧樹脂 4祕清漆型環氧樹脂，聯苯型環氧_、二甲苯型環氧樹 10ΠΙ3167 21 201247415 月曰聯本芳烧基型環氧樹脂等芳基神烧基型環氧樹脂，萘紛型 環氧樹脂、萘二酚型環氧樹脂、2官能至4官能環氧型萘樹脂、 蔡喊型環氧樹脂、聯萘型環氧樹脂、萘芳烧基型環氧樹脂等蔡 型環氧樹脂，蒽型環氧樹脂，苯氧基型環氧樹脂，二環戊二烯 型裱氧樹脂，降莅烯型環氧樹脂，金剛烷型環氧樹脂，第型環 氧樹脂等。 作為環氧樹脂，可單獨使用該等中之一種，亦可併用具有不 同重量平均分子量之兩種以上，亦可將一種或兩種以上與該等 之預聚物併用。 該等環氧觸之中，尤佳為芳基伸絲型環氧樹脂。藉此， 可進一步提尚吸濕焊錫耐熱性及阻燃性。 所明芳基伸縣型環氧娜，係胁重複單財具有一個以 上之芳基伸烧基之環氧樹脂。例如可舉出二甲苯型環氧樹脂、 聯苯二亞甲基型環氧樹脂等。該等之中，較佳為聯苯二亞甲基 型環氧樹脂。聯苯二亞甲基型環氧樹脂例如可以下述通式 表示。 [化4] (ιν> 。上述通式(IV)所示之聯笨二亞甲基型環氧樹脂的平均重複 單位4任意之整數。n之下限並無特別限定，較佳為1以上， 更佳為2以上。右η為上述下限值以上，則可抑制聯苯二亞甲 101113167 22 201247415 基型裱氧樹脂之結晶化，於通用溶劑中之溶解性提高，因此操 作’交今易。n之上限並無特別限定，較佳為1〇以下，更佳為$ 以下。右η為上述上限值以下，則樹脂之流動性提高，可抑制 成形不良等之發生。 : 作為上述以外之環氧樹脂，較佳為具有縮合環芳香族烴構造 :⑱越β漆&環氧樹脂。藉此，可進步提耐熱性、低熱膨 服性。 具有縮合環芳香族烴構造之酚醛清漆型環氧樹脂為具有 萘、蒽、菲、稠四苯、筷、芘、聯伸三苯及苯并蒽、其他縮合 壤芳香族轉造之祕清漆㈣氧娜。具有縮合環芳香族煙 構造之_清漆型環氧翻旨由於可規律地排舰㈣香環，因 此低熱膨祕優異。又，由於_轉移溫度亦較高，因此财熱 性優異H崎重複構造之分子量較大，因此與先前之驗 盤清漆型環氧她較，_性優異，且可藉由與氰_旨樹脂組 =而改善氰酸_旨之弱點之脆弱性。因此，藉由與氰酸酉旨樹 =厂:以使用，玻璃轉移溫度進—步增高，因此無㈣應 之女裝可靠性優異。 類環料族烴構造之雜清漆型環氧樹脂係將由盼 類化δ物與甲《貞化合物、及縮合環芳香族烴化合物所人成之 酚醛清漆型酚樹脂環氧化而成。 σ 紛類化合物並無特職定，例如可舉出：級，鄰甲盼、間 曱酚 '對曱酚等曱酚類，23 · 甲基本酚、2,4-二曱基苯酚、 101113167 23 201247415 2,5-一曱基苯盼、2,6_二曱基苯紛、3,4_二甲基苯盼、π二甲 基苯酴等二甲基苯盼類，2,3,5_三子基苯盼等三甲基苯盼類， 鄰乙基苯紛、間乙基苯盼、對乙基苯紛等乙基苯紛類，異丙基 苯紛、丁基苯齡、第三丁基苯盼等燒基苯紛類；鄰苯基苯^ 間苯基苯盼、對苯基苯盼、鄰苯二紛，二經基蔡、i，心二 祕奈、2,7-二經基蔡等萘二盼類，間苯二盼、鄰笨二盼、辦 苯二盼、鄰苯三盼、間苯三紛等多元烧基間笨二盼、燒 基郇笨一@分、烧基對笨一紛等烧基多元酚類等。該等之中，就 成本方面及對分解反絲來之效果而言，雛為料。〃 醛類化合物並無特別限定，例如可舉出：甲酸、三聚甲駿、 =儒、㈣、碰、聚情、三氯乙酸、六亞甲基四胺、糖 醛、乙二路、正丁搭、己酸、稀丙酸、苯甲酿、巴豆酸、两稀 醛、四甲酿、苯乙搭、鄰甲苯甲酸、柳酸、二經基苯甲酸、三 羥基苯曱醛、4-羥基-3-甲氧基醛三聚曱醛等。 縮合環芳香族烴化合物並無特職定，例如可舉出：甲氧基 蔡、丁氧基萘等萘衍生物，曱氧基蒽等蒽衍生物，甲氧基菲等 菲衍生物，除此以外可列舉稍四笨衍生物、疾衍生物、祐衍生 物、衍生物聯伸三苯及苯并蒽衍生物等。 具有縮合環芳香族烴構造之盼清漆型環氧樹脂並無特別 限^例如可舉出：甲氧基萘改質鄰曱紛祕清漆環氧樹脂、 丁氧基萘改質曱基(對）情祕清漆環氧樹脂、及甲氧基萃改 質祕清漆縣樹料。料之巾，較料具有下述式^所 101113167 24 201247415 示之縮合環芳香族烴構造之 [化5](η represents an integer of 0 or more and 8 or less). The lower limit of the weight average molecular weight (Mw) of the cyanate resin is not particularly limited, and is preferably Mw of 500 or more, and more preferably Mw of 600 or more. When the Mw is at least the above lower limit, when the insulating resin layer is formed, the occurrence of stickiness can be suppressed, and the resin layers can be prevented from adhering to each other or the transfer of the resin can be caused. Further, the upper limit of Mw is not particularly limited, but Mw is preferably 4,50 Å or less, and particularly preferably Mw is 3,000 or less. In addition, when Mw is at most the above upper limit value, the reaction can be suppressed from being fast, and in the case of forming a circuit board, it is possible to suppress the occurrence of a defect or a decrease in the peeling strength of the interlayer. The Mw of the cyanate resin or the like can be measured, for example, by gel permeation chromatography (Gpc, Permeation Chromatograpliy 'standard material: polystyrene conversion), and the cyanate resin can be used alone or in combination. Two or more types may be used in combination with one or more of these prepolymers. The content of the thermosetting resin contained in the resin composition is not particularly limited as long as it is appropriately adjusted depending on the purpose, and is preferably 5 mass based on the total amount of the resin composition. /. The above is 90% by mass or less, more preferably 1% by mass or more and 8% by mass or less, and particularly preferably 20% by mass or more and 5 parts by mass or less. When the content of the thermosetting resin is at least the above lower limit value, the handleability is improved, and the resin layer is easily formed. In the case of the above-mentioned upper limit of the heat-cured lyophile (4), the strength or the resistance of the resin layer is increased, or the linear expansion coefficient of the resin layer is lowered, and the effect of reducing the warpage of the laminate is improved. As the thermosetting resin, an epoxy resin can be used in addition to cyanate vinegar resin (especially, a secret varnish type chaotic acid lyophile, a Cai sin type cyanate resin, a dicyclopentadiene type cyanic acid vinegar resin). It does not contain dentate atoms in nature, and can also be used in combination. Examples of the epoxy resin include a double-type A-type epoxy resin, a Wei F-type ring, a (four) 嶋 旨 、, a material 峨 _, a shirt type, an epoxy resin, and a double W type epoxy resin. Such as double-twisted ring and other secret β-type epoxy resin, A secret varnish type epoxy resin 4 secret varnish type epoxy resin, biphenyl type epoxy _, xylene type epoxy tree 10ΠΙ3167 21 201247415 Aryl-based epoxy resin such as aryl-based epoxy resin, naphthalene-based epoxy resin, naphthalene diphenol epoxy resin, 2-functional to 4-functional epoxy naphthalene resin, and T-type epoxy Resin, binaphthyl epoxy resin, naphthalene aromatic epoxy resin, etc., Tie epoxy resin, bismuth epoxy resin, phenoxy epoxy resin, dicyclopentadiene type oxirane resin Ethylene type epoxy resin, adamantane type epoxy resin, first type epoxy resin, and the like. As the epoxy resin, one of these may be used alone, or two or more kinds having different weight average molecular weights may be used in combination, or one or two or more kinds may be used in combination with the prepolymers. Among these epoxy touches, an aryl stretch type epoxy resin is particularly preferred. Thereby, the heat resistance and flame retardancy of the moisture absorption solder can be further improved. The aryl-based Shenxian-type epoxidized phthalate is an epoxy resin having a aryl group with more than one aryl group. For example, a xylene type epoxy resin, a biphenyl dimethylene type epoxy resin, etc. are mentioned. Among these, a biphenyl dimethylene type epoxy resin is preferred. The biphenyl dimethylene type epoxy resin can be expressed, for example, by the following formula. (1) (4) The lower limit of the average repeating unit of the biphenylene type epoxy resin represented by the above formula (IV) is not particularly limited, and is preferably 1 or more. More preferably, it is 2 or more. When the right η is at least the above lower limit value, the crystallization of the biphenyl dimethine 101113167 22 201247415 base type oxirane resin can be suppressed, and the solubility in the general-purpose solvent is improved, so the operation is easy The upper limit of n is not particularly limited, but is preferably 1 or less, more preferably less than or equal to. When the right η is at most the above upper limit, the fluidity of the resin is improved, and formation failure or the like can be suppressed. The epoxy resin preferably has a condensed ring aromatic hydrocarbon structure: 18-beta lacquer & epoxy resin, whereby heat resistance and low heat spreadability can be improved. Novolac varnish having a condensed ring aromatic hydrocarbon structure Type epoxy resin is a secret varnish (4) oxynaphthalene with naphthalene, anthracene, phenanthrene, condensed tetraphenyl, chopsticks, bismuth, extended triphenyl and benzopyrene, and other condensed earth aromatics. It has a condensed ring aromatic structure. _ varnish-type epoxy reversal due to the regular row of ships (four) incense ring Therefore, it is excellent in low heat and swelling. Moreover, since the _ transfer temperature is also high, the molecular weight is excellent, and the molecular weight of the H-seven repeating structure is large, so that it is superior to the previous varnish-type epoxy, and can be borrowed. The vulnerability of the weak point is improved by the combination of cyanide and resin. Therefore, by the use of cyanic acid, the glass transition temperature is increased, so there is no (four) female The varnish-type epoxy resin of the cyclized hydrocarbon structure is epoxidized by a phenolic varnish type phenol resin which is made of a quinone compound and a condensed cyclic aromatic hydrocarbon compound. σ There are no special rules for σ compounds, for example, grades, o-tolan, indophenols, p-phenols such as p-phenol, 23 · methylphenol, 2,4-dinonylphenol, 101113167 23 201247415 2,5-monomethylbenzene, 2,6-dimercaptobenzene, 3,4-dimethylbenzene, π-dimethylphenylhydrazine, etc., 2,3 , 5_triosylbenzene, and other trimethylbenzenes, o-ethylbenzene, m-ethylbenzene, p-ethylbenzene, etc., isopropylbenzene Butyl benzene, tributyl benzene, etc.; phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl phenyl benzene Nai, 2,7-di-Cai Cai and other naphthalene di-consultations, inter-phenylene-prone, neighboring stupid, benzophenone, phthalate, benzene, and other benzenes Based on the stupid one @分, 烧基对笨一一等, etc., such as polyphenols, etc. Among these, in terms of cost and effect on the decomposition of the anti-filament, the aldehydes are not. In particular, for example, formic acid, trimeric methyl, ru, (four), touch, poly, trichloroacetic acid, hexamethylenetetramine, alditol, ethylene, butyl, hexanoic acid, Dilute propionic acid, benzoic acid, crotonic acid, dilute aldehyde, tetramethyst, phenylethyl, o-toluic acid, salicylic acid, dibenzobenzoic acid, trihydroxybenzaldehyde, 4-hydroxy-3-methoxy Aldehyde trimeraldehyde and the like. The condensed cyclic aromatic hydrocarbon compound is not specifically defined, and examples thereof include a naphthalene derivative such as methoxy-clay or butoxynaphthalene, an anthracene derivative such as anthracene oxime, and a phenanthrene derivative such as methoxyphenanthrene. Other examples include a slightly stupid derivative, a disease derivative, a benedict derivative, a derivative-stretched triphenylene, and a benzindene derivative. The varnish-type epoxy resin having a condensed ring aromatic hydrocarbon structure is not particularly limited, and examples thereof include methoxynaphthalene modified orthoquinone varnish epoxy resin and butoxynaphthalene modified thiol group (pair). The esthetic varnish epoxy resin and the methoxy extract are used to modify the secret varnish county tree material. The towel of the material has the structure of the condensed ring aromatic hydrocarbon shown in the following formula: 101113167 24 201247415 [Chemical 5]

酚醛清漆型環氧樹脂。 (V) (式中’ Ar為縮合環芳香族 一 々®鴒坦基。r可相同亦可不同，為自 氫原子，讀1以上且1G以下之煙基或自素元素，苯基、节 基等芳基及包含環氧_之麵基巾所選擇之基。n、P及q 為1以上之整數，又，η、 p q之值於各重複單位中玎相同亦可 不同）。 [化6] -ccf(Ari) (Ar2)Novolac type epoxy resin. (V) (In the formula, 'Ar is a condensed ring aromatic one 々 鸰 鸰 。 。. R can be the same or different, is a hydrogen atom, read 1 or more and 1G or less of the nicotine or self-primary element, phenyl, benzyl The aryl group and the base group containing the epoxy-based base towel. n, P and q are integers of 1 or more, and the values of η and pq may be the same or different in each repeating unit. [Chemical 6] -ccf(Ari) (Ar2)

(式(V)中之Ar為式(VI)中之(Arl)〜⑻4)所示的構造。式(νι) 中之R可相同亦可不同，為自氫原子，碳數丨以上且丨〇以下 之烴基或i素元素，苯基、¥基等芳基及包含環氧丙醚之有機 基中所選擇之基）。 • 作為上述以外之環氧樹脂，較佳為萘紛型環氧樹脂、 ，二齡型環氧樹脂、2宫能至4宫能環氧㈣樹脂、萘鱗型環 乳樹脂等萘㈣氧獅。藉此，可進―倾高耐触、低熱膨 101113167 25 201247415 服^又，與苯環相比較，萘環之^堆疊效果較高，因此 低熱膨脹性、低減縮性特別優異。進而，由於為多環構造， 交化較小、。作為奈_環氧樹脂，例如可以下述通式(νΙΙ_υ 表不作為奈—盼型環氧樹脂，可以下述式⑽·2)表示，作為 2 g g能裱氧型蔡樹脂’可以下述式(VII_3娜哪似） 表不’作為奈趟型環氧樹脂，例如可以下述通式⑽_6)表示。 [化7](Ar in the formula (V) is a structure represented by (Arl) to (8) 4) in the formula (VI). R in the formula (νι) may be the same or different, and is a hydrocarbon group or an element of a hydrogen atom having a carbon number of not more than 丨〇, an aryl group such as a phenyl group or a fluorenyl group, and an organic group containing a glycidyl ether. The base chosen in the base). • As the epoxy resin other than the above, it is preferably a naphthalene epoxy resin, a second-age epoxy resin, a 2 gong to 4 gong epoxy (tetra) resin, a naphthalene squama ring resin, or the like. . In this way, it is possible to achieve high low-heat expansion and low shrinkage. Further, since it has a multi-ring structure, the cross-linking is small. The naphthene-based epoxy resin may be, for example, a general formula (νΙΙ_υ, which is not a neat-positive epoxy resin, and may be represented by the following formula (10)·2), and the following formula (2 gg can be used as a gas-oxygen type resin). VII_3 Na is similar to the following formula (10)_6). [Chemistry 7]

(η表不平均丨以上且6以下之數，r表示環氧丙基或碳數上 以上且1〇以下之烴基）。 [化8](The η table is not more than 丨 and not more than 6 and r represents a glycidyl group or a hydrocarbon group having a carbon number or more and a number of carbon atoms or less). [化8]

(V1I-2) [化9] 101113167 26 201247415(V1I-2) [Chem. 9] 101113167 26 201247415

(Vll-3) (VII ~ 4) (VII-5) [化 10](Vll-3) (VII ~ 4) (VII-5) [Chem. 10]

(VI 卜 6) /式中，Rl表示氣原子或甲基。R2分別獨立地表示氫原子、 碳原子數1〜4之絲、枝基、萘基或含__基之萃笑。 〇及"為分別為0〜2之整數，且。或m之任-者為丨以:)。 環氧樹脂之含量之下限並無特麻定，相對於樹脂組成物總 體，較佳為1質量％以上，更佳為2質量％以上。若含量為上 述下限值以上，職_樹脂之反應性提高，可提高所獲得之 產品之咖性。環氧樹脂之含量之上限並無特別限定，較佳為 55質量％以下’更佳為4〇 „%以下。若含量為上述上限值 以下，則可進一步提高耐熱性。 環氧樹脂之重量平均分子量(Mw)之下限並無特別限定。較 10Π13167 27 201247415 =m〇(ux上更佳為Mw為_以上。若_為上 述下限值以上，則可抑制樹脂層產生黏性。心 別限定，較佳為如為20，_以下 ’、，、特 * 文佳為Mw為15,〇〇〇以 。右 述上限值以下’則於預浸料製作時，對於纖唯 … 又付更均勻之產品。環氧樹脂之勤例 如可藉由GPC進行測定。 於使用氰酸_脂(尤其係祕清漆魏酸自咖旨、蔡紛型 氰酸醋樹脂、4戊二烯型紐輯脂)或環氧樹脂(芳基伸院 基型環氧韻，尤錢二亞？基型環氧樹脂、具有縮合環 芳香族烴構造之祕清漆型環氧樹脂、萘_環氧樹脂)作為 熱硬化性麟讀況，紐為進而使祕跑旨。 例如可舉出：祕清漆㈣樹脂、可溶醜魏樹脂、芳基曰伸 烧基型酚樹脂等。作為紛樹脂，可單獨使用該等中之一種，亦 可併用具有不同重量平均分子量之兩種以上，亦可將一種或兩 種以上與該等之預聚物併用。該等之中，尤佳為芳基伸烷基型 酚樹脂。藉此，可進一步提高吸濕焊錫耐熱性。 作為芳基伸烷基型酚樹脂，例如可舉出二曱笨型酚樹脂、聯 苯二亞甲基型酚樹脂等。聯苯二亞曱基型酚樹脂例如可以下述 通式(VIII)表示。(VI 卜 6) In the formula, R1 represents a gas atom or a methyl group. R2 independently represents a hydrogen atom, a filament having a carbon number of 1 to 4, a branched group, a naphthyl group or a γ-containing group. 〇 and " are integers of 0 to 2, respectively. Or the role of m - who is 丨 to :). The lower limit of the content of the epoxy resin is not particularly limited, and is preferably 1% by mass or more, and more preferably 2% by mass or more based on the total of the resin composition. When the content is at least the above lower limit value, the reactivity of the _resin is improved, and the coffee quality of the obtained product can be improved. The upper limit of the content of the epoxy resin is not particularly limited, but is preferably 55% by mass or less, and more preferably 4% or less. When the content is at most the above upper limit value, heat resistance can be further improved. The lower limit of the average molecular weight (Mw) is not particularly limited. It is more preferably 10 Π 13167 27 201247415 = m 〇 (more preferably, ux is Mw is _ or more. When _ is at least the above lower limit value, viscosity of the resin layer can be suppressed. Preferably, if it is 20, _ or less ', ', and * * * * * * * * * * M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M More uniform product. Epoxy resin can be measured by GPC, for example. Use cyanate _ lipid (especially secret varnish Wei acid from coffee, Cai sin cyanate resin, 4 pentadiene type) Grease or epoxy resin (aryl-based excipient-based epoxy rhyme, especially Chinese yoke? base type epoxy resin, secret varnish type epoxy resin with condensed ring aromatic hydrocarbon structure, naphthalene_epoxy resin) as heat The sclerosing syllabus, the New Zealand is the secret of the secret. For example, it can be exemplified: secret varnish (4) resin, soluble Wei resin, aryl oxime-based phenol resin, etc. As the resin, one of these may be used alone, or two or more kinds having different weight average molecular weights may be used in combination, and one or two or more kinds may be used together with the resin. The prepolymer is used in combination, and among these, an arylalkylene type phenol resin is particularly preferable, whereby the heat resistance of the moisture absorbing solder can be further improved. Examples of the arylalkylene type phenol resin include diterpenes. The phenic phenol resin, the biphenyl dimethylene phenol resin, etc. The biphenyl dihydrazinyl phenol resin can be represented, for example, by the following formula (VIII).

[化 11] 101113167 28 201247415 上^通式(VIII)所示之聯苯三亞甲基型_脂的 重複單位n 為任思之整數。n之下限並無特別限定，較佳為1以上，更佳 為2以上。若n為上述下限值以上，則可進一步提高耐熱性。 重複單位η之上限並無特別限定，較佳為以下，更佳 r 為8以下。又’若η為上述上限值以下，則與其他樹脂之相溶 r 性提高，可提高作業性。 藉由上述氰酸酿樹脂(尤其係_清漆型氮酸醋樹脂、茶紛 ^氰—環戊氰酸g旨細旨)或環氧樹脂(芳基伸 j型環氧樹脂，尤其係聯苯二亞曱基魏氧樹脂、具有縮合 %芳香她構造之祕清漆型環氧樹脂、萘紛型環氧樹脂)與 芳基伸燒基型盼樹脂之組合而控制交聯密度，可容易地控制反 應性。 盼樹脂之含量之下限並無特別限定，相對於樹脂組成物總 =旦較佳為1質量％以上，尤佳為5質量％以上。絲樹脂之 3里為上述下限值以上，則可提高耐熱性。又喝樹脂之含量 之上限並無特別限定，相對於樹脂組成物總體，較佳為^質 量％以下，尤佳為40質量。/。以下。若_脂之含量為上述上限 值以下，則可提高低熱膨脹之特性。 酚樹脂之重量平均分子量(Mw)之下限並無特別限定，較佳 •為Mw為400以上，尤佳為Mw為5〇〇以上。若Mw為上述 下限值以上，則可抑制樹脂層產生黏性。又，酚樹脂之Μ%之 上限並無特別限定，較佳為Mw為18,000以下，更佳為Mw 101113167 29 201247415 為15_以下。若Mw為上述上限值以下則於預浸料之製 作時’對於纖維基材之含浸性提高，可獲得更均句之產品。紛 樹脂之Mw例如可藉由GPC進行測定。 ^進而’於使用驗g旨樹脂(尤其係祕清漆型氰酸賴脂、 萘紛型氰酸_脂、二環戊二烯型氰酸g旨樹脂)與盼樹與芳基 伸二基型崎脂’尤其係聯苯：亞曱基型_脂)與環氧樹脂 (:基伸烷基型環氧樹脂’尤其係聯苯基二亞甲基型環氧樹 =、具有縮合環料族烴構造之祕清漆魏氧樹脂、蔡紛型 環氧樹脂)之組合製作純(尤錢桃基板)之㈣，可獲得特 別優異之尺寸穩定性。 又，較佳為樹脂組成物含有無機填充材。藉此，即便使積層 板薄里化亦可料更優異之強度。進而，可進—步提高積層 板之低熱膨脹化。 (無機填充材） 作為無機填充材’例如可舉出：滑石粉、炮燒黏土、未鍛燒 黏土、雲母，朗等㈣鹽，氧化鈦、氧她、軟水紹石、二 ^化石夕、熔融二氧化♦等氧化物，碳酸弼、碳酸鎮、水滑石等 =鹽，氫氧化紹、氫氧化鎮、氫氧化解氫氧化物，硫酸銷、 硫酸約、亞硫酸鱗硫酸鹽或亞魏鹽，職鋅、制酸鎖、 硼酸結、蝴酸約、哪酸鋼等鑛鹽，氮化銘、氮化石朋、氮化石夕、 氮化碳等氮化物，欽酸銷、⑽顧等鈦酸鹽等。 作為無機填充材，可單獨使祕等中之-種，亦可併用兩種 101113167 30 201247415 以上。該等之中，尤佳為二氧化石夕，就低熱膨脹性優異之觀點 而言’較佳為炫融二氧化石夕。炫融二氧化石夕之形狀有粉碎狀及 求狀為了確保無機填充材之高填充化與對於纖維基材之含浸 !·生’可知用為了降低樹脂組成物之溶融黏度而使用球狀二氧化 ，石夕等對應於其目的之使用方法。 : 無機填充材之平均粒徑之下限並無制限定，較佳為〇〇ι _以上’更佳為αι ,以上。若無機填充材之粒徑為上述下 限值以上’則可抑制清漆之黏度增高，可提高預浸料製作時之 作業性。又’平均粒徑之上限並無特別限定，較佳為5 〇 _ 以下’更佳為2.0 μιη以下。若無機填充材之粒徑為上述上限 值以下’則可抑制於清漆中填充劑之沈殿等現象，可獲得更均 勻之樹脂層。又，於内層基板之導體電路之L/s小於·〇 _ 時’可抑制對佈線間之絕緣性造成影響。 無機填充材之平均粒徑例如利用雷射繞射式粒度分佈測定 裝置(HORIBA製造，LA-500) ’以體積基準測定粒子之粒度分 佈’並將其中值徑(D50)設定為平均粒徑。 又，無機填充材並無特別限定，可使用平均粒徑為單分散之 無機填充材，亦可使用平均粒徑為多分散之無機填充材。進而 亦可併用一種或兩種以上之平均粒徑為單分散及/或多分散之 無機填充材。 無機填充材較佳為平均粒徑5.0 μιη以下之球狀二氧化石夕， 更佳為平均粒徑0.01 μιη以上且2.0 μιη以下之球狀二氧化石夕 101113167 31 201247415 藉此，可進一步提高無機填充劑之填充性。 無機填充材之含量並無特別限定’較佳為基於樹脂組成物總 體而為20重量％以上且80重量％以下，更佳為3〇重量％以上 且75重量％以下。若含量為上述範圍内，則尤其可成為低熱 膨脹、低吸水。 又，本實施形態中所使用之樹脂組成物中亦可調配橡膠成 分，例如可使用橡膠粒子。作為橡膠粒子之較佳例，可舉出： 核殼型橡膠粒子、交聯丙烯腈丁二烯橡膠粒子、交聯苯乙烯丁 一稀橡膠粒子、丙稀酸系橡膠粒子、聚發氧粒子等。 核殼型橡膠粒子為具有核層與殼層之橡膠粒子。例如可舉 出：外層之殼層包含玻璃狀聚合物、内層之核層包含橡膠狀聚 合物之二層構造，或外層之殼層包含玻璃狀聚合物、中間層包 含橡膠狀聚合物、核層包含玻璃狀聚合物之三層構造者等。 玻璃狀聚合物層例如包含曱基丙烯酸曱酯之聚合物等，橡膠 狀聚合物層例如包含丙烯酸丁酯聚合物(丁基橡膠)等。作為核 设型橡膠粒子之具體例，可舉出：Staphyloid AC3832、 AC3816N(商品名 ’ Ganz Chemical 公司製造），Metablen KW-4426(商品名，三菱麗陽公司製造）。作為交聯丙烯腈丁二 嫦橡膠(NBR’Nitrile Butadiene Rubber)粒子之具體例，可舉出 XER-91(平均粒控0.5 μιη，JSR公司製造)等。 作為父聯本乙稀丁 一稀橡膠(SBR，Styrene-Butadiene Rubber) 粒子之具體例，可舉出XSK-500(平均粒徑0.5 μιη，JSR公司 101113167 32 201247415 製造)等。作為丙稀酸系橡膠粒子之具體例，可舉出他祕如 W300A(平均粒徑G1㈣、W45QA(平均練q 2㈣(三菱麗陽 公司製造)等。 聚石夕氧粒子只要為利用有機聚石夕氧燒形成之橡膠彈性微粒 子，則並鱗別限定，例如可舉ά :包絲魏橡樹有機聚 石夕氧烧交性體)本身之微粒子、及以三維交聯型主體之聚 石夕氧將包含二維交聯主體之聚魏_部被覆之核殼構造粒 子等。作為聚石夕氧橡膠微粒子，可使用ΚΜρ德、ΚΜρ携、 ΚΜΡ-597、ΚΜΡ-594(信越化學公司製造），t〇Rayfile_5〇〇、 TORAYFILE-600(東麗道康寧公司製造)等市售品。 橡膠粒子之含量並無特別限定，較佳為與上述無機填充材合 計’基於樹脂組成物總體而為20重量％以上且8〇重量％以下， 更佳為3G重量％以上且75重量％以下。若含量為範圍内則 尤其可成為低吸水。 (其他添加劑） 除此以外，可視需要於樹脂組成物中適當調配偶合劑、硬化 促進劑、硬化劑、熱塑性樹脂、有機填充材等添加劑。本實施 形態中所使用之樹脂組成物能以利用有機溶劑等使上述成分 溶解及/或分散而成之液狀形態而合適地使用。 藉由使用偶合劑，熱硬化性樹脂與無機填充材之界面之濕潤 性提高’可使樹脂組成物均勻地固定於纖維基材上。因此，較 佳為使用偶合劑，可改良耐熱性、尤其係吸濕後之焊錫财熱性。 101113167 33 201247415 作為偶合劑，只要㈣常用作偶合劑者則可使用，具體而 S，較佳為使用自環氧矽烧偶合劑、陽離子矽烷偶合劑、胺其 矽烷偶合劑、鈦酸酯系偶合劑及矽油型偶合劑中所選擇之—種 以上之偶合劑。藉此’可提高無機填充材之界面之濕潤性，藉 此可進一步提高耐熱性。 偶合劑之添加量之下限係依存於填充材的比表面積，故並無 特別限^，相對於填紐 f量份較佳為⑽5 f量份以上 更佳為0.1質量份以上。若偶合劑之含量為上述下限值以上， 則可充分地被覆填紐，可提高耐熱性。又，添加量之上限並 無特別限定，較佳為3質量份町，更佳為2 f量份以下。若 含量為上述上限值以下，則可抑觸反應造成影響，可抑制挽 曲強度等之下降》 作為硬化促進劑，可使用公知者，如可舉出：環燒酸辞、 環烧紐、辛酸亞錫、辛_、雙乙醯和·(ιι)、三乙酿两 酮姑(ΠΙ)等有機金屬鹽，三乙胺、三丁胺、二氮雜雙環[2初 辛烧等三級胺類，2_苯基_4_曱基―、2m乙㈣n 苯基-4-乙基料、2_苯基.4_甲基_5.絲咪H苯基妙二 經基味鱗料類，_、魏A、壬絲畴純合物，: 酸、苯曱酸、水揚酸、對甲苯俩等有機酸等，鎮鹽化合物等 或其混合物。作為硬化促進劑，可包含該等之衍生物而翔使 用一種，亦可包含該等之衍生物而併用兩種以上。 鏽鹽化合物並無特別限定，例如可使用下述通式⑽所示之 101113167 34 (IX) (IX)201247415 鑌鹽化合物 [化 12] R1 R2— (式中’ P為磷原子，Rl 未經取代之具有芳香環或雜分別表示經取代或 代之脂肪族基，可相同亦土:或者經取代或未經取 個以上之可向分子外釋出之質子的於分子内具有至少1 離子、或其錯陰離子）。、、nu)價的質子供體之陰 。.:之含量並ί特別限定，較佳為樹脂組_^ 里0以上且5重量0/0以下，更佳為0.1重量％以上且2 里/〇以下1含量為上述下限值以上，則可充分地發揮促進 硬化之效果。若含量紅述上限值町，則可進—步提高預浸 料之保存性。 本實施形態中之樹脂組成物亦可進一步併用苯氧樹脂、聚醯 亞胺樹脂、聚酿胺醯亞胺樹脂、聚苯鱗樹脂、聚驗礙樹脂、聚 酯樹脂、聚乙烯樹脂、聚苯乙烯樹脂等熱塑性樹脂，苯乙烯_ 丁二烯共聚合體、苯乙烯-異戊二烯共聚合體等聚苯乙烯系熱 塑性彈性體，聚烯烴系熱塑性彈性體、聚醯胺系彈性體、聚酯 系彈性體等熱塑性彈性體，聚丁二烯、環氧改質聚丁二烯、丙 烯酸改質聚丁二烯、甲基丙烯酸改質聚丁二烯等二烯系彈性 101113167 35 201247415 作為苯氧樹脂，例如可舉出：具有雙㈣架之笨氧樹脂、具 、具有聯苯骨架 二數種的構造之 有奈骨架之苯氧樹脂、具有蒽骨架之苯氧樹脂、具 之苯氧樹脂等。又，亦可使用具有該等骨架中之數 苯氧樹脂。 該等之令’苯氧樹脂中較佳為使用具有聯苯骨架及雙齡^ 骨架之苯氧樹脂。藉由聯苯骨架所昇有之剛直性，可提高苯氧 樹脂之玻璃轉移溫度，且藉由雙酚S骨架之存在，可提高苯氧 樹脂與金屬之密接性。其結果為可實現積層板之耐熱性之提 高，且於製造電路基板時，可提高佈線層對於積層板之密接 性。又，苯氧樹脂中亦較佳為使用具有雙酚A骨架及雙酚F 骨架之苯氧樹脂。藉此，於電路基板之製造時，可進一牛提高 佈線層對於積層板之密接性。 又，亦較佳為使用下述通式(X)所示之具有雙酚苯乙酮構造 之苯氧樹脂。 [化 13]101113167 28 201247415 The repeating unit n of the biphenyltrimethylene type _lip represented by the above formula (VIII) is an integer of the genius. The lower limit of n is not particularly limited, but is preferably 1 or more, and more preferably 2 or more. When n is at least the above lower limit value, heat resistance can be further improved. The upper limit of the repeating unit η is not particularly limited, and is preferably the following, and more preferably r is 8 or less. Further, when η is at most the above upper limit value, the compatibility with other resins is improved, and workability can be improved. By the above-mentioned cyanic acid-making resin (especially, varnish type nitrous acid vinegar resin, tea sulphate-cyclopentane cyanide g) or epoxy resin (aryl-based j-type epoxy resin, especially biphenyl bisphenol) A combination of a fluorene-based oxy-resin, a varnish-type epoxy resin having a condensed % aromatic structure, a naphthalene-based epoxy resin, and an aryl-based resin-based resin to control the crosslinking density, and the reactivity can be easily controlled. . The lower limit of the content of the resin is not particularly limited, and is preferably 1% by mass or more, and particularly preferably 5% by mass or more based on the total of the resin composition. When the amount of the silk resin is 3 or more, the heat resistance can be improved. The upper limit of the content of the resin is not particularly limited, and is preferably at most the mass% or less, and more preferably 40% by mass based on the total amount of the resin composition. /. the following. If the content of the _lipid is less than or equal to the above upper limit value, the characteristics of low thermal expansion can be improved. The lower limit of the weight average molecular weight (Mw) of the phenol resin is not particularly limited, and is preferably Mw of 400 or more, and more preferably Mw of 5 Å or more. When Mw is at least the above lower limit value, the resin layer can be prevented from being sticky. Further, the upper limit of Μ% of the phenol resin is not particularly limited, but Mw is preferably 18,000 or less, more preferably Mw 101113167 29 201247415 is 15 Å or less. When Mw is at most the above upper limit value, the impregnation property with respect to the fiber base material at the time of production of the prepreg is improved, and a more uniform product can be obtained. The Mw of the resin can be measured, for example, by GPC. ^ Further 'in the use of the test of the resin (especially secret varnish type cyanate lysate, naphthalene type cyanate _ lipid, dicyclopentadiene cyanate g resin) and Pan and aryl extension two base type Grease 'especially biphenyl: fluorene type _lipid) and epoxy resin (: alkylene type epoxy resin 'especially biphenyl dimethylene type epoxy tree =, with condensed cyclic hydrocarbon structure The combination of the secret varnish of Wei oxy resin and Cai yan epoxy resin produces pure (Yi Qiantao substrate) (4), which can obtain particularly excellent dimensional stability. Further, it is preferred that the resin composition contains an inorganic filler. Thereby, even if the laminated board is made thinner, it is possible to obtain more excellent strength. Further, the low thermal expansion of the laminated board can be further improved. (Inorganic filler) As the inorganic filler, for example, talc powder, calcined clay, uncalcined clay, mica, lang, etc., titanium oxide, oxygen, soft water, sulphur, smelting, melting Oxide ♦ and other oxides, barium carbonate, carbonated water, hydrotalcite, etc. = salt, hydrazine hydroxide, hydrazine hydroxide, hydroxide hydroxide, sulfuric acid pin, sulfuric acid, sulfite sulfate or wade salt, Zinc, acid lock, boric acid, butterfly acid, acid steel, etc., nitride, nitride, nitriding, carbon nitride and other nitrides, acid, (10) Gu titanate Wait. As the inorganic filler, it can be used alone or in combination with two kinds of 101113167 30 201247415 or more. Among these, it is particularly preferable that the steel dioxide is excellent in low thermal expansion property, and it is preferable to sinter the silica dioxide. The shape of the sulphur dioxide dioxide is pulverized and shaped to ensure high filling of the inorganic filler and impregnation of the fibrous substrate. It is known to use spherical oxidization in order to reduce the melt viscosity of the resin composition. , Shi Xi et al. The method of use corresponding to its purpose. The lower limit of the average particle diameter of the inorganic filler is not limited, and is preferably 〇〇 _ or more and more preferably α 1 or more. When the particle diameter of the inorganic filler is at least the above lower limit value, the viscosity of the varnish can be suppressed from increasing, and the workability at the time of preparation of the prepreg can be improved. Further, the upper limit of the average particle diameter is not particularly limited, but is preferably 5 〇 _ or less and more preferably 2.0 μm or less. When the particle diameter of the inorganic filler is less than or equal to the above upper limit value, it is possible to suppress a phenomenon such as a immersion of a filler in the varnish, and a more uniform resin layer can be obtained. Further, when the L/s of the conductor circuit of the inner substrate is less than / 〇 _, it is possible to suppress the influence on the insulation between the wirings. The average particle diameter of the inorganic filler is measured by, for example, a laser diffraction type particle size distribution measuring apparatus (manufactured by HORIBA, LA-500) to measure the particle size distribution of the particles by volume and set the median diameter (D50) to the average particle diameter. Further, the inorganic filler is not particularly limited, and an inorganic filler having an average particle diameter of monodisperse may be used, or an inorganic filler having an average particle diameter of polydisperse may be used. Further, one or two or more kinds of inorganic fillers having an average particle diameter of monodisperse and/or polydisperse may be used in combination. The inorganic filler is preferably spherical spheroidal oxide having an average particle diameter of 5.0 μm or less, more preferably spherical smectite having an average particle diameter of 0.01 μm or more and 2.0 μm or less. 101113167 31 201247415 Thereby, the inorganic substance can be further improved Filling properties of the filler. The content of the inorganic filler is not particularly limited. It is preferably 20% by weight or more and 80% by weight or less, more preferably 3% by weight or more and 75% by weight or less, based on the total of the resin composition. When the content is within the above range, it is particularly low in thermal expansion and low in water absorption. Further, the rubber composition used in the present embodiment may be formulated with a rubber component, and for example, rubber particles may be used. Preferable examples of the rubber particles include core-shell type rubber particles, crosslinked acrylonitrile butadiene rubber particles, crosslinked styrene butadiene rubber particles, acrylic acid rubber particles, polyoxygen particles, and the like. . The core-shell type rubber particles are rubber particles having a core layer and a shell layer. For example, the shell layer of the outer layer may comprise a glassy polymer, the core layer of the inner layer comprises a two-layer structure of a rubbery polymer, or the outer layer of the shell layer comprises a glassy polymer, the intermediate layer comprises a rubbery polymer, and the core layer A three-layer structure including a glassy polymer. The glassy polymer layer contains, for example, a polymer of decyl methacrylate, and the rubbery polymer layer contains, for example, a butyl acrylate polymer (butyl rubber) or the like. Specific examples of the core-type rubber particles include Staphyloid AC3822, AC3816N (trade name: manufactured by Ganz Chemical Co., Ltd.), and Metablen KW-4426 (trade name, manufactured by Mitsubishi Rayon Co., Ltd.). Specific examples of the particles of the NBR'Nitrile Butadiene Rubber are XER-91 (average particle size 0.5 μm, manufactured by JSR Corporation). Specific examples of the particles of the SBR (Styrene-Butadiene Rubber) include XSK-500 (average particle diameter: 0.5 μm, manufactured by JSR Corporation, 101113167 32 201247415). Specific examples of the acrylic rubber particles include W300A (average particle diameter G1 (four), W45QA (average k 2 (four) (manufactured by Mitsubishi Rayon Co., Ltd.), etc.) The rubber elastic microparticles formed by the oxy-oxygenation are not limited by the scale, for example, the microparticles of the woven silk, the eucalyptus, and the three-dimensional crosslinked body. A core-shell structure particle containing a two-dimensionally crosslinked body, and a core-shell structure particle, etc., can be used as the poly-stone rubber particles, and ΚΜρ德, ΚΜρ, ΚΜΡ-597, ΚΜΡ-594 (manufactured by Shin-Etsu Chemical Co., Ltd.) can be used. The content of the rubber particles is not particularly limited, and is preferably a total of 20% by weight based on the total amount of the resin composition as a total of the above-mentioned inorganic filler. The amount is preferably 8% by weight or less, more preferably 3 GW% by weight or more and 75% by weight or less. When the content is in the range, it is particularly low in water absorption. (Other additives) In addition, it may be appropriately adjusted in the resin composition as needed. An additive such as a coupling agent, a curing accelerator, a curing agent, a thermoplastic resin, or an organic filler. The resin composition used in the present embodiment can be dissolved or dispersed in a liquid form by using an organic solvent or the like. By using a coupling agent, the wettability of the interface between the thermosetting resin and the inorganic filler is improved, and the resin composition can be uniformly fixed to the fiber substrate. Therefore, it is preferred to use a coupling agent to improve Heat resistance, especially the heat retention of solder after moisture absorption. 101113167 33 201247415 As a coupling agent, it can be used as long as (4) is often used as a coupling agent, specifically, S, preferably using an epoxy oxime coupling agent or a cationic decane coupling. a combination agent, an amine decane coupling agent, a titanate coupling agent, and an oxime oil type coupling agent selected from the group consisting of more than one coupling agent, thereby improving the wettability of the interface of the inorganic filler material, thereby further improving heat resistance The lower limit of the amount of the coupling agent to be added depends on the specific surface area of the filler, so there is no particular limitation, and the amount of the filler f is preferably (10) 5 f. The amount of the coupling agent is preferably 0.1 part by mass or more. When the content of the coupling agent is at least the above lower limit value, the coating can be sufficiently covered and the heat resistance can be improved. The upper limit of the amount of addition is not particularly limited, and is preferably 3 mass. In the case of the above-mentioned upper limit, it is possible to suppress the influence of the reaction, and it is possible to suppress the decrease in the bending strength and the like. As the curing accelerator, a known one can be used. For example: organic acids such as ring-burning acid, ring-burning, stannous octoate, xin_, bis-ethylidene and (ιι), triethylene ketone (ΠΙ), triethylamine, tributylamine, Diazabicyclo[2, a tertiary amine such as priming, 2_phenyl_4_indolyl, 2m ethyl(tetra)nphenyl-4-ethyl, 2_phenyl.4_methyl_5. Silky rice H phenyl Miao two by base flavor scallops, _, Wei A, 壬 silk domain pure compound,: acid, benzoic acid, salicylic acid, p-toluene and other organic acids, etc., salt compounds, etc. Its mixture. As the hardening accelerator, one type of these derivatives may be used, and the above-mentioned derivatives may be contained in combination of two or more kinds. The rust salt compound is not particularly limited, and for example, 101113167 34 (IX) (IX) 201247415 which is represented by the following formula (10) can be used. The sulfonium salt compound [Chemical 12] R1 R2 - (wherein P is a phosphorus atom, and R1 is not Substituting an aromatic ring or a hetero group, respectively, means a substituted or substituted aliphatic group, which may be the same: or a substituted or unselected proton which is released to the outside of the molecule, having at least 1 ion in the molecule, Or its wrong anion). ,, nu) the proton of the proton donor. The content of the resin is particularly limited, and is preferably 0 or more and 5 weights/0 or less, more preferably 0.1% by weight or more, and 2 or less of the above-mentioned lower limit value. The effect of promoting hardening can be fully exerted. If the content is above the upper limit, the preservability of the prepreg can be improved. The resin composition in the present embodiment may further be used in combination with a phenoxy resin, a polyimide resin, a polyacrylamide resin, a polybenzoic resin, a polyhinder resin, a polyester resin, a polyethylene resin, and a polyphenylene. A thermoplastic resin such as a vinyl resin, a polystyrene-based thermoplastic elastomer such as a styrene-butadiene copolymer or a styrene-isoprene copolymer, a polyolefin-based thermoplastic elastomer, a polyamide-based elastomer, or a polyester-based Thermoplastic elastomer such as elastomer, diene elastomer such as polybutadiene, epoxy modified polybutadiene, acrylic modified polybutadiene, methacrylic modified polybutadiene 101113167 35 201247415 as phenoxy resin For example, a phenoxy resin having a double (four) frame, a phenoxy resin having a structure having two structures of a biphenyl skeleton, a phenoxy resin having an anthracene skeleton, a phenoxy resin, and the like can be given. Further, a phenoxy resin having the number of the skeletons may also be used. It is preferable to use a phenoxy resin having a biphenyl skeleton and a double age skeleton in the phenoxy resin. By virtue of the rigidity of the biphenyl skeleton, the glass transition temperature of the phenoxy resin can be increased, and the adhesion of the phenoxy resin to the metal can be improved by the presence of the bisphenol S skeleton. As a result, the heat resistance of the laminated board can be improved, and the adhesion of the wiring layer to the laminated board can be improved when the circuit board is manufactured. Further, in the phenoxy resin, a phenoxy resin having a bisphenol A skeleton and a bisphenol F skeleton is preferably used. Thereby, in the manufacture of the circuit board, the adhesion of the wiring layer to the laminate can be improved. Further, it is also preferred to use a phenoxy resin having a bisphenol acetophenone structure represented by the following formula (X). [Chem. 13]

(式中，R1可相同亦可不同，為自氫原子、碳數i以上且1〇 以下之煙基或6素元素中選擇之基，R2為自氫原子碳數i 以上且10以下之烴基或鹵素元素中選擇之基，R3為氫原子或 碳數1以上且1G以下之煙基，m為Q以上且5以下之整數广 101113167 36 201247415 含有雙酚苯乙酮構造之笨氧樹脂由於具有蓬鬆之構造，因此 溶劑溶解性或與所調配之熱硬化性樹脂成分之相溶性優異。 又’由於可形成低粗糙度且均勻之粗面，因此微細佈線形成性 優異。 具有雙酚苯乙酮構造之苯氧樹脂可藉由利用觸媒使環氧樹 月曰與紛樹脂高分子量化的方法等公知之方法合成。 具有雙紛苯乙酮構造之苯氧樹脂亦可含有除了通式(X)之雙 酚苯乙酮構造以外的構造，其構造並無特別限定，可舉出雙酚 A型、雙酚F型、雙酚s型、聯苯型、苯酚酚醛清漆型、曱酚 祕清漆型之構造等。其巾，含有聯苯型之構造者之玻璃轉移 溫度較向’因此較佳。 含有雙酚苯乙酮構造之苯氧樹脂中之通式(χ)的雙酚苯乙鲷 構造之含量並無特別限定，較佳為5莫耳％以上且％莫耳。A 以下，更佳為10莫耳％以上且85莫耳％以下，進而較佳為b 莫耳％以上且75莫耳％以下。若含量為上述下限值以上，則可 充分地發揮提高耐熱性'耐濕可靠性之效果。又，若含量為上 述上限值以下，則可提高溶劑溶解性。 、苯氧樹脂之重量平均分子量(Mw)並無特麻定，較佳為‘ 為5,000以上且100，_以下，更佳為1〇,_以上且％ 〇〇 以下，進而較佳為2〇，_以上且5〇，_以下。若勤為上〇〇 上限值以下，則可提高與其他樹脂之相雜或於溶财之/ 性。若為上述下賊以±’難贿提高，可抑餘用於^解 101113167 37 201247415 基板之製造之情況產生不良狀況。 苯氧樹脂之含量並無特別限 脂組成物之㈣量灿上且仰=料之樹 絕緣樹脂層之機械強度之；=二上’則可抑制 + ，财抑觀緣叙_脹率之辦 加，可降低耐熱性》 干 視需要亦可於樹脸絲中添力姻,、消、 劑、紫外線吸收劑、發泡劑、浐备 '^十 等上述成分以外之添加^ 、離子捕捉劑 料：，可舉出:高嶺土、合成氧化鐵紅，黃、錄欽黃、 水t氧化鉻、氧猶、翻淡、合成群㈣無機顏料， 赦菁#多環顏料，偶氮顏料等。 作為染料，可舉出：異啊柄L料、蚀酮、二苯 并比南—_基。比洛并吼洛、花、痕瑞嗣、葱酿、散藍、。号讲、 啥侦、苯并咪嗤酮(Benzimidaz〇1_)、葱_紫卿祕眶）、 酞菁、次曱基偶氮等。 (第二預浸料） 繼而，對於構成積層板1〇〇之包含有機纖維基材層且不含玻 璃纖維基材層之一層以上的第二預浸料202，以與上述第一預 次料201及第三預浸料203不同之點為中心進行說明。 構成第二預浸料202之樹脂材料及添加劑並無特別限定，可 101113167 38 201247415 適田使用本實施形恶中之第—預浸料謝及第三預浸料撕中 所使用之樹脂組成物，亦可使用其他材料。 (有機纖維基材層） 作為本實施形態中之有機纖維基材層中所使用之有機纖維 '•基材，並無特別限定，例如可舉出將以下纖維作為主成分而構 ··成之°賴、維基料·聚笨㈣销賴維，《胺樹脂纖 維、芳香族聚醯胺樹脂纖維、全芳香族聚醯胺(芳族聚酿胺)樹 脂纖維等聚醯胺系樹脂纖維，聚酉旨樹脂纖維、芳香族聚賴脂 、截、·隹王芳香族承g曰樹脂纖維等聚醋系樹脂纖維，聚醯亞胺樹 月曰纖維’說樹脂纖維等。作為有機纖維，可單獨使用該等中之 一種’亦可併用兩種以上。 "亥等之中’尤佳為聚笨并H樹脂纖維。藉由使用聚苯并口等 唾樹脂纖維，可進-步減小第三預浸料之熱膨脹係數或介電常 數，增大揚氏模數。例如可舉出東洋紡公司之Zyl0n(商標名）。 作為Zylon之種類’有彈性模數為18〇 Gpa之AS型（普通型）、 270 GPa之HM(高彈性型）型’於本實施形態之積層板中，就 低熱膨脹、高楊氏模數之觀點而言，較佳為更高彈性之HM 型。藉此，藉由使用HM型，可進一步減少半導體封裝之翹曲。 本實施形態中之有機纖維基材層並無特別限定，可舉出有機 纖維布，有機纖維不織布等。該等之中，就強度、熱膨脹係數 之觀點而言，尤佳為有機纖維布。又，藉由使用有機纖維布， 可進一步減小第三預浸料之熱膨脹係數，增大楊氏模數。 101113167 39 201247415 有機纖維基材層之厚度並無特職定，較佳為1()哗以上且 150μιη以下，更佳為2〇pm以上且12〇μιη以下，進而較佳為 30 μιη以上且100 μηι以下。藉由使用具有此種厚度之有機纖 維基材’第二預浸料製造時之操作性進—步提高，且麵曲減少 效果尤其明顯。 於有機纖維基材中，較佳為於饥之線膨脹係數為〇 ppm/ C以下之有機纖維基材，更佳為_3 ppm/°c以下之有機纖維基 材。藉由使用具有此種線膨脹係數之有機纖維基材，可進一步 抑制本實施形態之積層板之翹曲。 進而’本實施形態中所使用之有機纖維基材之揚氏模數較佳 為50GPa以上且400GPa以下，更佳為60GPa以上且350 GPa 以下’進而較佳為70 GPa以上且300 GPa以下。藉由使用具 有此種揚氏模數之有機纖維基材，可有效地抑制例如由半導體 安裝時之回焊熱引起之佈線板的變形，因此電子零件之連接可 靠性進一步提高。 第一預浸料202之製造方法並無特別限定’例如可採用依據 上述第一預浸料201及第三預浸料203之製造方法之方法。 作為構成積層板100之預浸料之組合，例如可設定為：使玻 璃布中含浸包含氰酸酯樹脂、酚樹脂及環氧樹脂之樹脂組成物 而獲得之第一預浸料201，使聚苯并噚唑樹脂纖維基材中含浸 包含氰酸酯樹脂、酚樹脂及環氧樹脂之樹脂組成物而獲得之第 一預浸料202，以及使玻璃布中含浸包含氰酸酯樹脂、齡樹脂 101113167 40 201247415 及環氧樹脂之樹脂組成物而獲得之第三預浸料2〇3。 若依序積層上述第—預浸料、第二預浸料、第三預浸料並加 以成形’财加財機纖維基材層之料彈 請之職、臟_增触。^積層 (附有金屬箔之積層板） 繼而，對本實施形態中之附有金屬箱之積層板200進行說 本實施形態中之積層板觸可設定為如圖3所示之於至少时 面上形成有金屬箱210的附有金屬箱之積層板_。乂早 金屬簿210之厚度較佳為！叫以上且18帅以下 以上且12卿以下。若金屬箱21〇之厚度為上述範: 則可形成微細圖案，可使積層板薄型化。 作為構成金屬箱2H)之金屬，例如可舉出：銅及銅系 減紹系合金、銀及銀系合金、金及金系合金、鋅及料^、 歧錄系合金、錫及錫系合金、鐵及鐵系合金、科金、 I名）、42合金、賴或超_鋼等Fe_N ’（商 施等。又，亦可使用附有载體之電解銅箱等、。口金、〜或 又’亦可代替金屬箱210，將膜積層於 板⑽之至少-面m)上。作中之積層 丙稀、聚對笨二曱酸乙H萘二曱酸二^ 稀、聚 氟系樹脂等。 酉曰、聚醯亞胺、 作為附有金屬箔之積層板200之製造方 4 例如為如下戶斤 101113167 1 201247415 述。於經積層之第一預浸料201及第三預浸料203之外側的上 下兩面或單面上重疊金屬箔，並使用貼合裝置或加壓裝置於高 真空條件下將該等接合。或者直接於第一預浸料201及第三預 浸料203之外側之上下兩面或單面上重疊金屬箔。繼而，對將 積層板與金屬f自等重疊而成者利用真空加壓機進行加熱、加 壓，或者利用乾燥機進行加熱，藉此可獲得附有金屬箔之積層 板。 (附有增層之積層板） 繼而，對本實施形態中之附有增層之積層板3〇〇進行說明。 積層板100亦可如圖4所示般，於該積層板之至少一面11〇 之上。卩進而形成有包含第三纖維基材層與樹脂層的增層 303。此處，亦可不含第三纖維基材層3〇1，但含有第三纖維 基材層301，則防止附有增層之積層板3〇〇德曲的效果提高。 又’此時為了更有效地獲得防止附有增層之積層板3〇〇之輕 曲的效果’較佳為以如下方式將增層3〇3積層：於如圖5所示 般’於積層方向將-面m與第三纖維基材層3〇1之中心線 A3的距離設為D3 ’將增層之表面3ι〇與第三纖維基材層训 之中心線A3的距離設為D4時，滿足D3>d4之條件。 又’作為增層303之積層方法，並無特別限定，<為與積層 板1〇〇之積層方法同樣之方法，亦可為其他方法。 又日層303中所使用之材料並無特別限定適當使用積 層板⑽巾所使狀㈣，村㈣其他材料。 101113167 42 201247415 又’增層303之製造方法並無特別限定，可為與本實施形態 中之第一預浸料201、第二預浸料202或第三預浸料203同樣 之製造方法，亦可為其他製造方法。 (電路基板） 繼而’對本實施形態中之電路基板4〇〇進行說明。 積層板100可用於如圖6所示之電路基板4〇〇中。作為電路 基板400之製造方法，例如有如下所述之方法。 於以上述方法形成之附有金屬箔之積層板2〇〇上形成層間 連接用的通孔405，並藉由減成法、半加成法等製作佈線層 401。其後，將任意之增層3〇3積層，並藉由加成法重複進行 層間連接及形成電路之步驟，製造電路基板働。此處，一部 分或者全部之增層可含有纖維基材層，亦可不含。 (附有阻焊劑層之電路基板） 繼而，對本實施形態中之附有阻焊劑層之電路基板5〇〇進行 說明。 電路基板400亦可如圖7所示般，於該電路基板之至少一面 11〇(於形成有增層之情況，為增層之表面31〇)上進而形成有包 含第四纖維基材層501與樹脂層之阻焊劑層5G3。此處，亦可 不含第四纖維基材層5(Π，但若含有第四纖維基材層5〇1，則 防止附有阻焊劑層之電路基板綱之_的效果提高。 又，此時為了更有效地獲得防止附有阻焊劑層之電路基板 5〇〇之趣曲的效果’較佳為以如下方式將阻焊劑層挪積層： 101113167 43 201247415 於如圖8所讀’於制方向將—面11G(於形成有增層之情 況，為增層之表面310)與第四纖維基材層5〇1之中心線A4的 距離設為D5，將阻焊劑層之表面训與第四纖維基材層观 之中心線A4的距離設為D6時，滿足〇5>〇6之條件。 作為阻焊劑層5〇3之積層方法，並無特別限定，可為與本實 施形態中之積層板1〇〇或增層3〇3之積層方法同樣的方法，亦 可為其他方法。 / 阻焊劑層⑽巾所使用之材料並無制限定，可適當使用本 貫施形,4中之積層板100或增層3G3中所使用之材料，亦可使 用其他材料。 又’阻桿劑層5〇3之製作方法並無特別限定，可為與本實施 形態中之第-預浸料2(Π、第二預浸料搬、第三預浸料2〇3 或增層303同樣之製作方法，亦可為其他製作方法。 進而’藉由在本實施形態中之電路基板5〇〇上搭載半導體元 件60卜可製造如圖9所示之半導體封裝儀。本實施形態中 之半導體封裝600並無特別蚊，例如具有㈣路加工之附有 金屬络之積層板1〇〇、增層3〇3、阻焊劑層5〇3及半導體元件 6(U。 作為半導體封裝600之製造方法，並無特別限定，例如有如 下所述之方法。將半導體元件6()1搭載於具有阻焊劑層观之 經電路加工之積層板謂的上部。此時，於通道孔備中利用 凸塊603將半導體元件601與佈線層4〇1接合。其後，藉由底 101113167 44 201247415 部填充劑祕進打底部填充。如此，可獲得半導體封果。 如以上所制般，_本實麵態，可提供減趣曲之積芦 板100。尤其係即便於製成厚度較薄之積層板之情況，亦可^ 效地抑_曲之產生。而且’使用積層板卿之電路基板係麵 曲、尺寸穩定性等機械特性、成形性優異者。因此，積層板 獅可合適地用於要求高密度化、高多層化之印刷佈線鱗要 求可靠性之用途中。 積層板！〇〇即便於上述電路加工及其後之各步驟中，亦減 少紐曲的產生。因此，本實施縣'中之半導體域_不易產 生翹曲及龜裂，可實現薄型化。 以上，對本發明之實施縣進行_，但轉為本發明之例 示y亦可採用上述以外之各種構成。例如亦可為如圖卿)般， 於第-預浸料2〇1及第三預浸料2〇3<外侧分別進而積層含有 纖維基材層之預浸料204而獲得的如圖1〇(b)之積層板·。 (實施例） 以下，藉由實關及峨機本㈣進行說明，但本發明並 不蚊於料。⑽’於實施财，份只要树職日/則表 示重量份。又，層之厚度係以平均膜厚表示。 於實施例及比較例中使用以下之原料。 環氧樹脂A :聯苯芳綠型祕清_氧樹脂（日本化藥公 司製造，NC-3000) ' 環氧樹脂B :萘骨架改質曱紛酴齡清漆型環氧樹脂⑼c公 101113167 45 201247415 司製造，EXA-7320) 環氧樹脂C :萘醚型環氧樹脂(DIC公司製造，HP_6000) 環氧樹脂D:多官能萘型環氧樹脂(DIC公司製造，Hp_475〇) 氰酸酯樹脂A:酚醛清漆型氰酸酯樹脂（日本龍沙(L〇nza(wherein R1 may be the same or different, and is a group selected from a hydrogen atom, a niobium group having a carbon number i or more and 1 Å or less, or a 6-element element, and R2 is a hydrocarbon group having a carbon number i or more and 10 or less from a hydrogen atom. Or a group selected from a halogen element, R3 is a hydrogen atom or a niobium group having a carbon number of 1 or more and 1 G or less, and m is an integer of Q or more and 5 or less. 101113167 36 201247415 The phenoxy resin having a bisphenol acetophenone structure has The fluffy structure is excellent in solvent solubility or compatibility with the thermosetting resin component to be blended. Further, since a low roughness and a uniform rough surface can be formed, fine wiring formation property is excellent. The phenoxy resin having a structure can be synthesized by a known method such as a method of quantifying a polymer of Epoxy resin and a resin by using a catalyst. The phenoxy resin having a acetophenone structure may contain a formula other than the formula (X). The structure other than the bisphenol acetophenone structure is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, bisphenol s type, biphenyl type, phenol novolac type, and phenol phenol varnish. Type structure, etc. Its towel contains biphenyl type The glass transition temperature of the constructor is relatively 'important'. The content of the bisphenol styrene structure of the formula (χ) in the phenoxy resin having a bisphenol acetophenone structure is not particularly limited, and is preferably 5 The content of the ear is at least the above and more preferably at least 10 mol% and more than 85 mol%, more preferably more than b mol% and not more than 75 mol%. In addition, the effect of improving the heat resistance 'moisture resistance can be sufficiently exhibited. Further, when the content is at most the above upper limit value, solvent solubility can be improved. The weight average molecular weight (Mw) of the phenoxy resin is not particularly numb. Preferably, it is 5,000 or more and 100 or less, more preferably 1 〇, _ or more and % 〇〇 or less, and further preferably 2 〇, _ or more and 5 〇, _ or less. If the upper limit is below the upper limit, it can improve the compatibility with other resins or the solubility of the other. If the above-mentioned thief is improved by ±', it can be used for the manufacture of the substrate of 101113167 37 201247415. A bad condition occurs. The content of phenoxy resin is not particularly limited to the composition of the fat (4) The mechanical strength of the resin layer of the tree; = two on the 'can suppress +, the financial view of the edge of the expansion _ the increase of the expansion rate, can reduce the heat resistance" dry vision needs to add strength to the tree face, Adding agents, ionizing agents, ultraviolet absorbing agents, foaming agents, and preparations other than the above-mentioned components, and ion trapping agents: kaolin, synthetic iron oxide red, yellow, recorded yellow, water t Chromium oxide, oxygen, lightening, synthetic group (4) inorganic pigment, phthalocyanine #polycyclic pigment, azo pigment, etc. As a dye, it can be exemplified by: different stalk L material, ketone, dibenzopyrene-- Base. Bilo, 吼, 花, 、, 葱, 葱, 散, 散, 啥, 苯 嗤 嗤 Benz (Benzimidaz〇1_), onion _ purple secrets), turnip, times Mercapto azo and the like. (Second Prepreg) Next, the second prepreg 202 comprising the organic fiber base material layer and not including one or more layers of the glass fiber base material layer of the laminated board 1〇〇, and the first prepreg described above The difference between 201 and the third prepreg 203 will be mainly described. The resin material and the additive constituting the second prepreg 202 are not particularly limited, and may be used in the first embodiment of the present invention. The prepreg and the resin composition used in the third prepreg tearing are used. Other materials can also be used. (Organic fiber base material layer) The organic fiber used in the organic fiber base material layer of the present embodiment is not particularly limited, and examples thereof include the following fibers as a main component. ° Lai, wiki material, poly stupid (four) pin Lai Wei, "amine resin fiber, aromatic polyamide resin fiber, wholly aromatic polyamine (aromatic polyamine) resin fiber and other polyamine resin fiber, poly Polyester resin fiber such as resin fiber, aromatic polylysate, cut-off, 隹 芳香族 aromatic, g-resin fiber, polyethylenimine tree 曰 fiber, said resin fiber. As the organic fiber, one of these may be used singly or two or more kinds may be used in combination. "Hai, etc.' is especially good for polystyrene and H resin fiber. By using a salylene resin fiber such as a polyphenylene port, the thermal expansion coefficient or dielectric constant of the third prepreg can be further reduced to increase the Young's modulus. For example, Zyl0n (trade name) of Toyobo Co., Ltd. can be mentioned. As the Zylon type, the AS type (common type) having an elastic modulus of 18 〇Gpa and the HM (high elastic type) type of 270 GPa are low thermal expansion and high Young's modulus in the laminate of the present embodiment. From the viewpoint, it is preferably a more elastic HM type. Thereby, by using the HM type, the warpage of the semiconductor package can be further reduced. The organic fiber base material layer in the present embodiment is not particularly limited, and examples thereof include an organic fiber cloth and an organic fiber nonwoven fabric. Among these, an organic fiber cloth is particularly preferable from the viewpoint of strength and coefficient of thermal expansion. Further, by using the organic fiber cloth, the thermal expansion coefficient of the third prepreg can be further reduced, and the Young's modulus can be increased. 101113167 39 201247415 The thickness of the organic fiber base material layer is not particularly limited, and is preferably 1 () 哗 or more and 150 μηη or less, more preferably 2 〇 pm or more and 12 〇 μηη or less, further preferably 30 μm or more and 100 or more. Below μηι. The operability at the time of manufacture of the second prepreg by using the organic fiber substrate having such a thickness is further improved, and the effect of reducing the curl is particularly remarkable. In the organic fiber base material, an organic fiber base material having a coefficient of expansion of 〇 ppm/C or less is preferably used, and an organic fiber base material of _3 ppm/° c or less is more preferable. By using the organic fiber base material having such a linear expansion coefficient, the warpage of the laminated plate of the present embodiment can be further suppressed. Further, the Young's modulus of the organic fiber base material used in the present embodiment is preferably 50 GPa or more and 400 GPa or less, more preferably 60 GPa or more and 350 GPa or less, and further preferably 70 GPa or more and 300 GPa or less. By using the organic fiber base material having such a Young's modulus, it is possible to effectively suppress deformation of the wiring board caused by, for example, reflow heat during semiconductor mounting, and thus the connection reliability of the electronic component is further improved. The method for producing the first prepreg 202 is not particularly limited. For example, a method according to the method for producing the first prepreg 201 and the third prepreg 203 may be employed. The combination of the prepregs constituting the laminated board 100 can be set, for example, by first impregnating the glass cloth with a resin composition containing a cyanate resin, a phenol resin, and an epoxy resin to form a first prepreg 201. The first prepreg 202 obtained by impregnating a benzoxazole resin fiber substrate with a resin composition containing a cyanate resin, a phenol resin and an epoxy resin, and impregnating the glass cloth with a cyanate resin and an aged resin 101113167 40 201247415 and a third prepreg 2〇3 obtained from the resin composition of the epoxy resin. If the above-mentioned first prepreg, the second prepreg, and the third prepreg are sequentially laminated and formed into a material bomb of the base material layer of the fortune machine, the job is dirty, and the dirt is increased. The laminated layer (the laminated sheet with the metal foil) is further described. The laminated board 200 with the metal box in the present embodiment is said to be capable of being set to at least the time surface as shown in FIG. A laminated metal plate with a metal box 210 is formed. Early in the morning, the thickness of the metal book 210 is preferably! Called above and 18 handsome below and below 12 Qing. When the thickness of the metal case 21 is set to the above range, a fine pattern can be formed, and the laminated plate can be made thinner. Examples of the metal constituting the metal case 2H) include copper and copper-based alloys, silver and silver alloys, gold and gold alloys, zinc and materials, and alloys, tin and tin alloys. , iron and iron alloys, Kojin, I name), 42 alloy, Lai or super_steel and other Fe_N '(Shang Shi, etc. Also, you can also use electrolytic copper box with carrier, etc.. Gold, ~ or In addition, instead of the metal case 210, the film may be laminated on at least the face m of the plate (10). The laminate in the process is propylene, polypyrene bromide, H-naphthalene dicarboxylic acid, di-, difluoro-resin, and the like. The crucible, the polyimine, and the manufacturer of the laminate 200 with the metal foil are described, for example, as follows: 101113167 1 201247415. The metal foil is placed on the upper and lower surfaces or on one side of the first prepreg 201 and the third prepreg 203 which are laminated, and joined by a bonding apparatus or a pressurizing apparatus under high vacuum conditions. Alternatively, the metal foil may be directly overlapped on the lower surface or the single surface of the first prepreg 201 and the third prepreg 203. Then, the laminated board and the metal f are superposed on each other by heating or pressing with a vacuum press, or by heating with a dryer, whereby a laminated sheet with a metal foil can be obtained. (Laminated sheet with build-up layer) Next, the build-up board 3〇〇 with the build-up layer in the present embodiment will be described. The laminate 100 may also be on at least one side 11 of the laminate as shown in FIG. Further, a buildup layer 303 comprising a third fibrous base material layer and a resin layer is formed. Here, the third fibrous base material layer 3〇1 may not be contained, but the third fibrous base material layer 301 may be contained to prevent the effect of the laminated layer 3 with the buildup layer. Further, in order to more effectively obtain the effect of preventing the buckling of the laminated board 3 with the build-up layer, it is preferable to laminate the build-up layer 3〇3 in the following manner: as shown in FIG. The distance between the direction-surface m and the center line A3 of the third fiber base material layer 3〇1 is set to D3'. When the distance between the surface 3ι of the build-up layer and the center line A3 of the third fiber base layer is set to D4 , meet the conditions of D3 > d4. Further, the method of laminating the build-up layer 303 is not particularly limited, and the method may be the same as the method of laminating the laminate 1 or other methods. Further, the material used in the daily layer 303 is not particularly limited to the use of the laminated sheet (10), and the other materials of the village (four). 101113167 42 201247415 The manufacturing method of the additional layer 303 is not particularly limited, and may be the same as the first prepreg 201, the second prepreg 202 or the third prepreg 203 in the present embodiment. Can be used in other manufacturing methods. (Circuit Substrate) Next, the circuit board 4A in the present embodiment will be described. The laminate 100 can be used in the circuit substrate 4 shown in FIG. As a method of manufacturing the circuit board 400, for example, there is a method as described below. A through hole 405 for interlayer connection is formed on the metal foil-clad laminate 2 formed by the above method, and the wiring layer 401 is formed by a subtractive method, a semi-additive method, or the like. Thereafter, an arbitrary layer of 3〇3 is laminated, and the steps of interlayer connection and circuit formation are repeated by an additive method to fabricate a circuit board. Here, a part or all of the build-up layer may or may not contain a fibrous base material layer. (Circuit board with solder resist layer) Next, the circuit board 5A with the solder resist layer in the present embodiment will be described. As shown in FIG. 7, the circuit board 400 may further include a fourth fiber base material layer 501 on at least one side of the circuit board 11 〇 (in the case where the build-up layer is formed, the surface 31 of the build-up layer). A solder resist layer 5G3 with a resin layer. Here, the fourth fiber base material layer 5 may not be contained. However, if the fourth fiber base material layer 5〇1 is included, the effect of preventing the circuit board with the solder resist layer is improved. In order to more effectively obtain the effect of preventing the circuit board 5 with the solder resist layer from being attached, it is preferable to disperse the solder resist layer in the following manner: 101113167 43 201247415 - the distance between the surface 11G (in the case where the build-up layer is formed, the surface 310 of the build-up layer) and the center line A4 of the fourth fiber base material layer 5〇1 is set to D5, and the surface of the solder resist layer is coated with the fourth fiber. When the distance between the center line A4 of the base material layer is D6, the condition of 〇5>6 is satisfied. The method of laminating the solder resist layer 5〇3 is not particularly limited, and may be a laminate in the present embodiment. The method of laminating 1〇〇 or layer 3〇3 may be the same method as the other method. / The material used for the solder resist layer (10) is not limited, and the slab can be suitably used. Or other materials can be used for the materials used in the 3G3. Also, the barrier layer is 5〇3. The production method is not particularly limited, and may be the same as the first prepreg 2 (the second prepreg, the third prepreg 2〇3 or the buildup 303) in the present embodiment, or may be In other cases, the semiconductor package 60 shown in FIG. 9 can be manufactured by mounting the semiconductor element 60 on the circuit board 5A of the present embodiment. The semiconductor package 600 of the present embodiment has no special mosquito. For example, the laminated board 1〇〇, the build-up layer 3〇3, the solder resist layer 5〇3, and the semiconductor element 6 (U) having the metal circuit processed by the (fourth) process are not particularly limited as a method of manufacturing the semiconductor package 600. For example, there is a method in which the semiconductor element 6() 1 is mounted on a laminated board having a solder resist layer, and the semiconductor device 601 and the wiring are used in the via hole 603. The layer 4〇1 is joined. Thereafter, the underfill is filled by the bottom filler of the 101101167 44 201247415. Thus, the semiconductor sealing fruit can be obtained. As described above, the real surface state can provide the following.积芦板100. Especially if it is In the case of a laminate having a thinner thickness, it is also possible to suppress the occurrence of sigma. Moreover, the circuit board using the laminated board is excellent in mechanical properties such as surface curvature and dimensional stability, and excellent in formability. The lion can be suitably used in applications requiring high-density, high-layered printed wiring scales to require reliability. The laminated board! 〇〇 Even in the above-mentioned circuit processing and subsequent steps, the generation of the koji is reduced. Therefore, the semiconductor region in the present embodiment is less likely to be warped and cracked, and can be made thinner. The above is performed on the implementation county of the present invention, but it can be exemplified by the present invention. For example, as shown in FIG. 1 , the prepreg 2 〇 1 and the third prepreg 2 〇 3 lt are respectively laminated on the outer side and then the prepreg 204 containing the fibrous base material layer is respectively laminated as shown in FIG. 1 .积(b) laminate board·. (Embodiment) Hereinafter, the description will be made by the actual and the machine (4), but the present invention does not require mosquitoes. (10) In the case of the implementation of the fiscal, the share of the weight of the tree is indicated. Further, the thickness of the layer is expressed by the average film thickness. The following materials were used in the examples and comparative examples. Epoxy Resin A: Biphenyl Aromatic Green Type Clear Oxygen Resin (manufactured by Nippon Kayaku Co., Ltd., NC-3000) ' Epoxy Resin B: Naphthalene Skeleton Modification 酴 Ageing Varnish Epoxy Resin (9) c public 101113167 45 201247415 Manufactured by EXA-7320) Epoxy resin C: naphthalene ether type epoxy resin (manufactured by DIC Corporation, HP_6000) Epoxy resin D: polyfunctional naphthalene type epoxy resin (manufactured by DIC Corporation, Hp_475〇) Cyanate resin A : Novolac type cyanate resin (L〇nza, Japan)

Japan)公司製造，Primaset PT-30) 氰酸S旨樹脂B .雙紛A型氣酸@旨樹脂（日本龍沙公司製造， Primaset BA230) 酚樹脂A :聯苯二亞甲基型酚樹脂（日本化藥公司製造， GPH-103) 盼樹脂B:萘紛芳烧基型紛樹脂(東都化成公司製造，sn-485) 胺化合物：4,4’ -二胺基二笨基曱烷 雙馬來醯亞胺化合物(KI化成工業公司製造，BMI-70) 苯氧樹脂A:含有雙酚苯乙酮構造之苯氧樹脂 (合成例） 於容量1 L之反應容器中，加入四曱基聯苯型環氧樹脂（日 本環氧樹脂公司製造之「YX-4000」，環氧當量185 g/eq) 1 〇〇 g、 雙酚苯乙酮80 g及環己酮70 g ’加以攪拌而使其溶解。繼而， 滴加50 wt%四曱基氯化錄溶液0.4 g，於氮氣環境下於i80°C 反應5小時。反應結束後，過遽析出物，利用真空乾燥機於 95°C真空乾燥8小時，而獲得上述通式(X)所示之重量平均分 子量38,000、玻璃轉移溫度130°C之含有雙酚苯乙酮構造的苯 氧樹脂。 101113167 46 201247415 填充材A :球狀二氧化矽(Admatechs公司製造，SO-32R， 平均粒徑1 μιη) 填充材Β :球狀二氧化矽(德山公司製造，NSS-5N，平均粒 徑 75 nm) , 填充材C :軟水鋁石（Nabaltec公司製造，AOH-30，平均粒 . 徑 2.0 μιη) 偶合劑A : γ-環氧丙氧基丙基三曱氧基矽烷(GE東芝聚矽氧 公司製造，A187) 硬化觸媒A :相當於上述通式(ιχ)之鏽鹽化合物之磷系觸媒 (住友電木（Sumitomo Bakelite)公司製造，C〇5_MB) 著色劑A :酞菁藍/苯并咪唑酮/甲基乙基酮（=1/1/8)混合 物：（山陽色素公司製造） (實施例） 使用以下順序製作本實施形態中之積層板。 首先’對預浸料之製造進行說明。將所使狀麟清漆之組 成不於表1中，將所獲得之預浸料卜16触之各層的厚度示 於表2巾。再者，所謂於表2〜4中記載之pl〜pi6，係指預 次料1〜預浸料16，所謂表2中記載之伽伽，係指口祕^ .G1咖册⑽公司，所謂日東紡，係指日東纺公司，所謂旭化 •成’係指旭化成電子材料公司。再者，預浸料i〜5成為不對 稱預浸料’紐料6〜16成為對稱預浸料。 (預浸料1) 101113167 201247415 1. 樹脂組成物之清漆A之製備 使作為環氧樹脂A之聯苯芳烷基逛酚醛清漆環氧樹脂（曰本 化藥公司製造，NC-3000)11.0重量份、作為酚樹脂a之聯苯 二亞曱基型紛樹脂（日本化藥公司製造’ GPH-103)8.8重量份、 作為氰酸酯樹脂A之酚醛清漆型氰酸酯樹脂（日本龍沙公司製 造，PrimasetPT-30)16.0重量份、及作為氰酸酯樹脂b之雙紛 A型氰酸酯樹脂（日本龍沙公司製造，primaset ba230)4.0重量 份於甲基乙基酮中溶解、分散。進而，添加作為填充材A之 球狀二氧化矽(Admatechs公司製造’ SO-32R，平均粒徑j μιη)60.0重量份，及作為偶合劑A之γ·環氧丙氧基丙基三曱氧 基矽烷(GE東芝聚矽氧公司製造，Α187)〇.2重量份，使用高逮 攪拌裝置攪拌30分鐘，並以使不揮發成分成為5〇重量％之方 式調整，製備樹脂組成物之清漆Α(樹脂清漆a)。 2. 載體材料之製造 使用模塗裝置，以乾燥後之樹脂層之厚度成為16 〇 μιη的方 式將樹脂清漆Α塗佈於聚對苯二甲酸乙二g旨（ρΕ丁， Polyethylene Terephthalate)膜（帝人杜邦獏公司製造之 膜，厚度36 μιη)上，利用160°C之乾燥裝置將其乾燥5分鐘， 獲得第-樹脂層用之附有PET膜之樹脂片材A(載體材料A)。 又，以乾燥後之樹脂層之厚度成為1〇 〇 μιη的方式，將上述 樹脂清漆Α同樣地塗佈於ΡΕΤ膜上，利用16〇t：之乾燥機乾 燥5分鐘’獲得第二樹脂層用之附有pET膜之樹脂片材職 101113167 48 201247415 體材料B)。 3.預浸料之製造 於玻璃纖維基材(厚度25 μιη’日東紡公司製造之τ玻璃織 布，WTX1037-53-X133，IPC 規格 1037，線膨脹係數：2.8 ppm/ °C)的兩面上，以樹脂層與纖維基材相對向之方式配置第一樹 脂層用之載體材料A及第二樹脂層用之載體材料b，利用圖2 所示之真空層壓裝置及熱風乾燥裝置含浸樹脂組成物，獲得積 層有PET膜之預浸料。 具體而言，於玻璃纖維基材之兩面上，將載體材料A及載 體材料B以位於玻璃纖維基材之寬度方向之中心的方式分別 疊合，於自常壓減壓9.999xl04pa(約750 Torr)以上之條件下， 使用80°C之層壓輥進行接合。 此處，於玻璃纖維基材之寬度方向尺寸之内側區域中，使载 體材料A及載體材料B之樹脂層分別與玻璃纖維基材之兩面 側接合，且於玻璃纖維基材之寬度方向尺寸之外側區域中，使 載體材料A及載體材料B之樹脂層彼此接合。 繼而，使上述經接合者歷時2分鐘於設定為丨肌之橫向搬 送型之熱風錢裝置㈣過’藉此錢壓力發揮仙而進行加 熱處理，獲得預浸料1(P1)。 此時，第-樹脂層之厚度仰為9 μιη，玻璃纖維基材層之 厚度為25 μιη ’第二樹脂層之厚度(C2)為3卿，總厚度為 μιη ’ C2/C1為0.33。再者’樹脂層之厚度係藉由切出預浸料之 101113167 49 201247415 剖面並利用光學顯微鏡進行觀察而測定。 (預浸料2) 1. 樹脂組成物之清漆B之製備 使作為環氧樹脂B之萘骨架改質甲酚酚醛清漆型環氧樹脂 (DIC公司製造，exa-7320)14.0重量份、作為氰酸酯樹脂A 之盼酸清漆蜇氰酸酯樹脂（日本龍沙公司製造，Primaset ρΤ*3())12·〇重量份、作為氰酸酯樹脂b之雙酚A型氰酸酯樹脂 (曰本龍沙公司製造，PrimasetBA230)3.6重量份、及作為硬化 觸媒A之相當於上述通式(ιχ)之鏽鹽化合物的磷系觸媒(住友 電木公司製造’ C05-MB)0.2重量份於曱基乙基酮中溶解、分 月欠進而’添加作為填充材A之球狀二氧化石夕(Admatechs公 司製k，SO-32R，平均粒徑1 μιη)65·〇重量份、作為填充材B 求狀一氧化石夕(德山公司製造，NSS_5N，平均粒徑75 nm)5.0 重置份、及作為偶合劑A之γ-環氧丙氧基丙基三曱氧基石夕烧 (GE東芝聚♦氧公司製造，A187)Q 2重量份，使用高速授摔裝 攪拌30刀知，並以使不揮發成分成為5〇重量％之方式調 整’製備樹脂組成物之清漆B(樹脂清漆B)。 2. 預浸料之製造 使用上述所獲得之樹脂清漆B以外，以與預浸料1相 同之方式製造預浸料2。 一 (預浸料3) 1.樹脂組成物之清漆C之製備 101113167 201247415 使作為環氧樹脂C之萘喊型環氧樹脂(DIC公司製造， HP 6000)10.8重量份、作為氰酸g旨樹脂a之盼酸清漆型氛酸賴 樹脂（曰本龍沙公司製造，PrimasetpT 3〇)14 〇重量份、及作為 酚樹月曰B之秦齡芳烧基型紛樹脂（東都化成公司製造， . 翻5)5.0重量份於甲基乙基_中溶解、分散。進而加作 .為填充材A之球狀二氧化石夕(八加咖也公司製造，， 平均粒控1 μιη)65.〇 t量份、作為填充材b之球狀二氧化石夕(德 山公司製造，NSS-5N，平均粒徑75 nm)5.〇重量份、及作為偶 合劑A之γ·環氧丙氧基丙基三甲氧基魏(GE東芝聚魏公司 製造’ A187)0.2重量份，使用高速攪拌裝置授拌3〇分鐘，並 以使不揮發成分成為5〇重量％之方式調整，製備樹脂組成物 之清漆C(樹脂清漆c)。 2.預浸料之製造 除了使用上述所獲得之樹脂清漆c以外，以與預浸料i相 同之方式製造預浸料3。 (預浸料4) 1.樹脂組成物之清漆D之製備 使作為環氧樹脂D之多官能萘型環氧樹脂(DIC公司製造， HP-4750)15.6重量份、作為氰酸酯樹脂a之酚醛清漆型氰酸酯 樹脂（日本龍沙公司製造，primasetPT-30)14.0重量份、及作為 硬化觸媒A之相當於上述通式(IX)之錯鹽化合物的麟系觸媒 (住友電木公司製造，C05_MB)0.2重量份於曱基乙基酮中溶 101113167 51 201247415 解、分散。進而’添加作為填充材A之球狀二氧化石夕(Ad—s 公司製造’ SO-32R ’平均粒徑i μιη)65.〇重量份、作為填充材 Β之球狀二氧化石夕（德山公司製造，NSS-5N，平均粒徑75 nm)5.0重量份、及作為偶合劑Α之γ•環氧丙氧基丙基三甲氧 基石夕烧(GE東芝聚魏公司製造，A187)G 2重量份，使用高速 揽拌裝置撥拌30分鐘，並以使不揮發成分成^ %冑量％之方 式調整，製備樹脂組成物之清漆D(樹脂清漆D)。 2.預浸料之製造 除了使用上述所獲得之樹脂清漆D以外，以與預浸料i相 同之方式製造預浸料4。 (預浸料5) 1.樹脂組成物之清漆E之製備 使作為環氧樹脂C之萘醚型環氧樹脂(DIC公司製造， ΗΡ·6000)11.0重量份、雙馬來酿亞胺化合物(KI化成工業公司 製造，BMI-70)20.0重量份、及作為胺化合物之4,4，-二胺基二 苯基甲烷3.5重量份於曱基乙基酮中溶解、分散。進而，添加 作為填充材A之球狀二氧化矽（Admatechs公司製造， SO-32R，平均粒徑1 μιη)20.0重量份、作為填充材C之軟水鋁 石(Nabaltec公司製造，ΑΟΗ-30，平均粒徑2.0 μιη)45.0重量 份、及作為偶合劑Α之γ-環氧丙氧基丙基三曱氧基矽烷(GE 東芝聚矽氧公司製造，Α187)0.5重量份，使用高速攪拌裝置攪 拌30分鐘，並以使不揮發成分成為50重量％之方式調整，製 101113167 52 201247415 備知丨組成物之清漆E(樹脂清漆e)。 2.預浸料之製造Japan), manufactured by Primaset PT-30) Cyanate S-Resin B. Double-type A-type qi acid@-resin (manufactured by Nippon Longsha Co., Ltd., Primaset BA230) Phenol Resin A: Biphenyl dimethylene phenol resin Manufactured by Nippon Kayaku Co., Ltd., GPH-103) Resin B: Naphthalene aryl-based resin (manufactured by Dongdu Chemical Co., Ltd., sn-485) Amine compound: 4,4'-diaminodiphenyl decane double horse醯 醯 imide compound (manufactured by KI Chemical Industry Co., Ltd., BMI-70) phenoxy resin A: phenoxy resin containing bisphenol acetophenone structure (synthesis example) In a reaction vessel with a capacity of 1 L, a tetrahydrocarbyl group is added. Benzene type epoxy resin ("YX-4000" manufactured by Nippon Epoxy Co., Ltd., epoxy equivalent 185 g/eq) 1 〇〇g, bisphenol acetophenone 80 g and cyclohexanone 70 g' were stirred It dissolves. Then, 0.4 g of a 50 wt% tetradecyl chloride recording solution was added dropwise, and the mixture was reacted at i80 ° C for 5 hours under a nitrogen atmosphere. After completion of the reaction, the precipitate was dried and vacuum dried at 95 ° C for 8 hours using a vacuum dryer to obtain a bisphenol benzene containing a weight average molecular weight of 38,000 and a glass transition temperature of 130 ° C represented by the above formula (X). A phenoxy resin of a ketone structure. 101113167 46 201247415 Filler A: Spherical cerium oxide (manufactured by Admatechs, SO-32R, average particle size 1 μιη) Filler Β: Spherical cerium oxide (manufactured by Toyama, NSS-5N, average particle size 75) Nm) , filler C : soft boehmite (manufactured by Nabaltec, AOH-30, average particle size; diameter 2.0 μιη) coupler A : γ-glycidoxypropyltrimethoxy decane (GE Toshiba polyoxyl Manufactured by the company, A187) Hardening catalyst A: Phosphorus-based catalyst equivalent to the rust salt compound of the above formula (ιχ) (manufactured by Sumitomo Bakelite Co., Ltd., C〇5_MB) Colorant A: Phthalocyanine blue/ Mixture of benzimidazolone/methyl ethyl ketone (= 1/1/8): (manufactured by Shanyang Pigment Co., Ltd.) (Example) The laminate of the present embodiment was produced in the following procedure. First, the manufacture of the prepreg will be described. The composition of the lining varnish was not shown in Table 1, and the thickness of each layer of the obtained prepreg 16 was shown in Table 2. In addition, the pl to pi6 described in Tables 2 to 4 refers to the pre-pregnancy 1 to the prepreg 16, and the gamma described in Table 2 refers to the mouth secret ^. G1 coffee book (10) company, so-called Nitto Spin Co., Ltd. refers to Nittohan Co., Ltd., and the so-called Asahi Kasei Co., Ltd. refers to Asahi Kasei Electronic Materials Co., Ltd. Further, the prepregs i to 5 become asymmetrical prepreg, which is asymmetrical prepreg 'News 6 to 16. (Prepreg 1) 101113167 201247415 1. Preparation of varnish A of resin composition A biphenyl aralkyl phenol aldehyde varnish epoxy resin (manufactured by Sakamoto Chemical Co., Ltd., NC-3000) as epoxy resin A 11.0 weight 8.8 parts by weight of a biphenyl dihydrazide-based resin ("GPH-103" manufactured by Nippon Kayaku Co., Ltd.) as a phenol resin a, and a novolac type cyanate resin as a cyanate resin A (Japan Longsha Co., Ltd.) 1 part by weight of the manufactured product, Primaset PT-30), and 4.0 parts by weight of a C-type cyanate resin (primaset ba230, manufactured by Nippon Longsha Co., Ltd.) as a cyanate resin b were dissolved and dispersed in methyl ethyl ketone. Further, spherical cerium oxide (manufactured by Admatech Co., Ltd., 'SO-32R, average particle diameter j μιη) 60.0 parts by weight, and γ·glycidoxypropyltrioxane as coupling agent A were added. Base decane (manufactured by GE Toshiba Polyoxo Co., Ltd., Α187) 2. 2 parts by weight, stirred for 30 minutes using a high-gear stirring device, and adjusted so as to make the non-volatile content 5 重量%, to prepare a varnish of the resin composition Α (Resin varnish a). 2. Production of carrier material A resin coating varnish was applied to a polyethylene terephthalate film by using a die coating apparatus so that the thickness of the dried resin layer became 16 μm. (The film manufactured by Teijin DuPont Co., Ltd., thickness: 36 μm) was dried by a drying apparatus at 160 ° C for 5 minutes to obtain a PET film-attached resin sheet A (carrier material A) for the first resin layer. In addition, the resin varnish was applied to the ruthenium film in the same manner as the thickness of the dried resin layer to be 1 μm, and dried by a dryer of 16 〇t: for 5 minutes to obtain a second resin layer. Resin sheet with pET film attached to 101113167 48 201247415 Body material B). 3. Prepreg is manufactured on both sides of a glass fiber substrate (thickness 25 μm η, τ glass woven fabric manufactured by Nitto Bose Co., Ltd., WTX1037-53-X133, IPC specification 1037, linear expansion coefficient: 2.8 ppm/°C). The carrier material A for the first resin layer and the carrier material b for the second resin layer are disposed such that the resin layer and the fiber substrate face each other, and the composition is impregnated with a vacuum laminating device and a hot air drying device as shown in FIG. A prepreg having a PET film laminated thereon is obtained. Specifically, on both sides of the glass fiber substrate, the carrier material A and the carrier material B are respectively superposed on each other in the center of the width direction of the glass fiber substrate, and the pressure is reduced from normal pressure to 9.999 x 10 4 Pa (about 750 Torr). Under the above conditions, bonding was carried out using a laminating roll of 80 °C. Here, in the inner region of the width direction dimension of the glass fiber substrate, the resin layers of the carrier material A and the carrier material B are bonded to both sides of the glass fiber substrate, respectively, and the width dimension of the glass fiber substrate is In the outer region, the resin layers of the carrier material A and the carrier material B are bonded to each other. Then, the above-mentioned splicer is subjected to heat treatment by applying the heat transfer device (4) set to the lateral transfer type of the diaphragm for 2 minutes, thereby performing the heat treatment to obtain the prepreg 1 (P1). At this time, the thickness of the first resin layer was 9 μm, the thickness of the glass fiber substrate layer was 25 μm, and the thickness (C2) of the second resin layer was 3 cm, and the total thickness was μιη 'C2/C1 was 0.33. Further, the thickness of the resin layer was measured by cutting out the cross section of the prepreg 101113167 49 201247415 and observing it with an optical microscope. (Prepreg 2) 1. Preparation of varnish B of resin composition: 14.0 parts by weight of a naphthene skeleton modified epoxy cresol novolak type epoxy resin (exa-7320, manufactured by DIC Corporation) as epoxy resin B Acid-Resin Acetone Cyanate Ester Resin (manufactured by Ryosa, Japan, Primaset ρΤ*3()) 12·〇 by weight, bisphenol A type cyanate resin as cyanate resin b (曰3.6 parts by weight of Primaset BA230) and a phosphorus-based catalyst (manufactured by Sumitomo Bakelite Co., Ltd. 'C05-MB) which is a rust salt compound of the above formula (ι) as a curing catalyst A, 0.2 parts by weight Dissolved in decyl ethyl ketone, and owed in a month, and then added spheroidal sulphur dioxide as a filler A (k, SO-32R, average particle size 1 μιη, manufactured by Admatech Co., Ltd.), 65 parts by weight, as a filling Material B is determined to be a oxidized stone eve (manufactured by Tokuyama Co., Ltd., NSS_5N, average particle size 75 nm) 5.0 reset parts, and γ-glycidoxypropyl tributary oxide as a coupling agent A (GE) Manufactured by Toshiba Polyoxing Co., Ltd., A187) Q 2 parts by weight, using a high-speed, throwing and stirring 30-knife, and making the non-volatile content 5 〇 The varnish B (resin varnish B) for preparing the resin composition was adjusted in the form of % by weight. 2. Manufacture of prepreg The prepreg 2 was produced in the same manner as the prepreg 1, except for the resin varnish B obtained above. (Prepreg 3) 1. Preparation of varnish C of resin composition 101113167 201247415 10.8 parts by weight of an epoxy resin C (manufactured by DIC Corporation, HP 6000), which is used as a cyanate resin a sulphuric acid varnish type sulphuric acid lye resin (manufactured by Sakamoto Ryusha Co., Ltd., Primasett T 3 〇) 14 parts by weight, and as a phenol tree moon 曰B, Qinling aryl-based resin (made by Dongdu Chemical Co., Ltd., . 5) 5.0 parts by weight of the solution was dissolved and dispersed in methyl ethyl group. Further, it is added as a spherical spheroidal dioxide of the filler A (manufactured by the company, average grain control 1 μιη) 65. 〇t parts, spherical sulphur dioxide as a filler b Manufactured by Yamayama Co., Ltd., NSS-5N, average particle size 75 nm) 5. 〇 by weight, and γ·glycidoxypropyltrimethoxy Wei as coupling agent A (produced by GE Toshiba Juwei Co., Ltd. 'A187) 0.2 The varnish C (resin varnish c) of the resin composition was prepared by mixing with a high-speed stirring apparatus for 3 minutes, and adjusting the nonvolatile content to 5 〇 by weight. 2. Manufacture of prepreg The prepreg 3 was produced in the same manner as the prepreg i except that the resin varnish c obtained above was used. (Prepreg 4) 1. Preparation of varnish D of resin composition: 15.6 parts by weight of polyfunctional naphthalene type epoxy resin (HP-4750, manufactured by DIC Corporation) as epoxy resin D, as cyanate resin a 14.0 parts by weight of a novolac type cyanate resin (primaset PT-30, manufactured by Nippon Longsha Co., Ltd.), and a lining catalyst (Sumitomo Bakelite) which is a salt-compounding compound of the above formula (IX) as a curing catalyst A Made by the company, C05_MB) 0.2 parts by weight in decyl ethyl ketone dissolved 101113167 51 201247415 solution, dispersion. Further, 'the addition of the spherical sulphur dioxide as the filler A (the average particle diameter i μιη manufactured by Ad-s Corporation) is 65. 〇 by weight, and the spherical sulphur dioxide as the filler 夕Manufactured by Yamagata Co., Ltd., NSS-5N, average particle size of 75 nm), 5.0 parts by weight, and γ-glycidoxypropyltrimethoxy sulphur as a coupling agent (GE Toshiba Co., Ltd., A187) G 2 The varnish D (resin varnish D) of the resin composition was prepared by mixing with a high-speed mixing device for 30 minutes and adjusting the non-volatile content to % by weight. 2. Manufacture of prepreg In addition to the use of the resin varnish D obtained above, the prepreg 4 was produced in the same manner as the prepreg i. (Prepreg 5) 1. Preparation of the varnish E of the resin composition 11.0 parts by weight of a naphthyl ether type epoxy resin (manufactured by DIC Corporation, ΗΡ·6000) as an epoxy resin C, and a bismaleimide compound ( 20.0 parts by weight of BMI-70, manufactured by KI Chemical Industry Co., Ltd., and 3.5 parts by weight of 4,4,-diaminodiphenylmethane as an amine compound were dissolved and dispersed in mercaptoethyl ketone. Further, 20.0 parts by weight of spherical cerium oxide (manufactured by Admatechs Co., Ltd., SO-32R, average particle diameter 1 μm) was added as a filler A, and a soft boehmite (manufactured by Nabaltec Co., Ltd., ΑΟΗ-30, average) 45.0 parts by weight of a particle size of 2.0 μm), and 0.5 parts by weight of γ-glycidoxypropyltrimethoxy decane (manufactured by GE Toshiba Polymer Co., Ltd., Α187) as a coupling agent, and stirred by a high-speed stirring device 30 The varnish E (resin varnish e) of the composition was prepared by adjusting the composition of the non-volatile content to 50% by weight. 2. Manufacturing of prepreg

除了使用上述所獲得之;^P 、讨月曰巧漆E以外，以與預浸料i相 同之方式製造預浸料5。 (預浸料6) 除了將第-樹脂層及第二樹脂層之厚度變更為表2所示之 值以外，以與預浸料5相同之方式製造預浸料6。 (預浸料7) 將上述所獲得之樹脂清漆A含浸於有機纖維基材(厚产& 哗’旭化成電子材料公司製造之聚笨并十坐樹脂纖維織又布， zyl〇nmz/AS型，長絲#:12μιη，長絲數：_束，㈣ 49細mm ’橫向49根/25議，基重：43 3咖2，透氣度： ⑽.8 cmW/see，表面處理：雜偶合劑處理，線膨脹係數⑺ °C) ·· -6鹏广C ’楊氏模數為18〇卿上，利们紙之加熱 爐乾燥2分鐘，獲得藏料H有機纖維基材層之厚度為 65哗’於該有機纖維基材層之兩面上設置有相同厚度(8:) 之樹脂層’總厚度為81 μηι。 (預浸料8) 除了使用上述所獲得之樹脂清漆Β以外，以與預浸料7相 同之方式製造預浸料8。 .. (預浸料9) 除了將纖維基材變更為有機纖維基材(厚度65 μηι，旭化成 101113167 53 201247415 聚苯并噚唑樹脂纖維織 布，Zylon 12卿，長絲數：66根/束，縱向49根 mm ’ 基重：43.3 g/m2，透氣度：20.8 電子材料公司製造之 116Z/HM型，長絲經： /25 mm，橫向 49 根/25 cmW/sec ^ : , ,t^M#^(25〇C): -6 ppm/t；，揚氏模數為挪Gpa)以外，以與預浸料8相同之 方式製造預浸料9。 (預浸料10〜12) 除了將樹脂清漆之種類變更為表2所示者以外，以與預浸料 9相同之方式製造預浸料1 〇〜12。 (預浸料13) 除了將樹脂層之厚度變更為如表2所心且將所使用之纖維 基材變更為有機纖維基材(厚度43 μιη，旭化成電子材料公司製 &之^^并脂纖維織布’ 則ημ型，線膨 服係數(25C) : _6pPm/°C)以夕卜以與預浸料11相同之方式製 造預浸料13。 (預浸料14) 除了將所使用之纖維基材變更為有機纖維紐(厚度126 μιη，旭域電子材料公司製造之聚苯將销賴維織布， Zylon273Z/HM型，線膨脹係數(ye) : 以外，以與 預浸料13相同之方式製造預浸料14。 (預浸料15) 除了將树爿θ層之厚度變更為如表2所示，且將所使用之纖維 101113167 54 201247415 基材變更為麵_基材(厚度％哗，驗㈣⑹灿⑽公 司衣k之E玻璃織布，E_ 〇4 5皿，ipc規格⑽❹，線膨 脹係數· 5.5 ppm/c)以外，以與預浸料7相同之方式製造預浸 料15。 (預浸料16) 除了使用上述所獲得之樹脂清漆B以外，以與預浸料⑴目 同之方式製造預浸料16。 於實施例1〜9及比較例卜2中，使用上述預浸料！ 〜16(於 表中僅δ載為P1 16)製造積層板，並使用該積層板製造電路 基板及半導體封裝。 (實施例1) 1.積層板之製造 以預浸料1、預浸料7、預浸料1之順序，將各預浸料1之 兩面之PET _離，以預浸料i之第—層分難預浸料7 侧接觸之方式將合計3片職料積層，於所獲得之積層體之兩 面上疊合12 _之_(三井金輕謂造之胁雷 猪），於220。(：、3 MPa進行加熱加壓成形2㈣，藉此獲得附 有金屬ϋ之積層板。所獲得之附有金屬箱之積層板的核層（包 含積層板之部分)之厚度為G.155 mm。再者於本實施例、比 較例中所使狀職料或_層於硬化前後厚度幾乎未變 化。因此，核層（包含積層板之部分)之厚度成為預浸料之厚度 的合計。 101113167 55 201247415 2.增層之製造 使作為氰酸醋樹脂A之祕清漆型氰酸醋樹脂（日本龍沙公 司製造，PrimaSetPT-3〇)25重量份、作為環氧樹脂A之聯笨芳 烧基型祕清漆環氧樹脂（日本化藥公司製造，NC_3〇〇〇)25重 量份、作為苯氧樹脂A之於上述所製作之含有雙酉分苯乙酮構 造的苯氧樹脂10重量份、及作為硬化促進劑之味唾化合物(四 國化成工業公司製造’ 1.$基_2_苯基坐)Q4重量份於甲基乙 基酮溶解、分散。進而添加作為填充材A之球狀二氧化石夕 (Admatechs公司製造，SO-32R，平均粒徑i μιη)39 4重量份、 及作為偶合劑Α之γ·環氧丙氧基丙基三ψ氧基魏(GE東芝聚 矽氧公司製造，A187)0.2重量份，使用高速攪拌裝置攪拌3〇 分鐘，並以使不揮發成分成為50重量％之方式調整，調整樹 脂組成物之清漆F(樹脂清漆F)。 使用模塗裝置，以乾燥後之樹脂層之厚度成為22.〇 μιη的方 式將樹脂清漆F塗佈於PET膜(聚對苯二曱酸乙二酯，帝人杜 邦膜公司製造之Purex膜，厚度36μιη)上，利用16〇<t之乾燥 裝置將其乾燥5分鐘，獲得第一樹脂層用之附有pet膜之樹 脂片材C(載體材料C)。 又，以乾燥後之樹脂層之厚度成為11.0 μηι的方式將樹脂清 漆F同樣地塗佈於PET膜上，利用16(TC之乾燥機乾燥5分 鐘’獲得第二樹脂層用之附有PET膜之樹脂片材D(載體材料 D)。 101113167 56 201247415 於玻璃纖維基材(厚度15 μιη，Unitika Glass Fibers公司製造 之E玻璃織布’ E02Z 04 53SK ’ IPC規格1015，線膨脹係數： 5.5 ppm/°C)的兩面上，以樹脂層與纖維基材相對向之方式配置 第一樹脂層用之載體材料C及第二樹脂層用之載體材料D，利 用圖2所示之真空層壓裝置及熱風乾燥裝置使樹脂組成物含 浸，獲得積層有PET膜之增層A。 具體而言，於玻璃纖維基材之兩面上將載體材料C及載體 材料D以位於玻璃纖維基材之寬度方向之中心的方式分別疊 合’於自常壓減壓9.999x104 Pa(約750 Torr)以上之條件下， 使用80°C之層壓輥進行接合。 此處，於玻璃纖維基材之寬度方向尺寸之内側區域中，使載 體材料C及載體材料D之樹脂層分別與玻璃纖維基材之兩面 側接合，且於玻璃纖維基材之寬度方向尺寸之外側區域中，使 載體材料C及載體材料d之樹脂層彼此接合。 繼而，使上述經接合者歷時2分鐘於設定為12〇(>(：之橫向搬 送型之熱風乾燥裝置内通過，藉此不使壓力發揮作用而進行加 熱處理，獲得增層A。 此時’第-樹脂層之厚度㈢為18μηι，玻璃纖維基材層之 厚度為15 μιη ’第二樹脂層之厚度(C2)為7 μιη，總厚度為4〇 μιη，C2/C1 為 0.39。 3.阻焊劑層之製造 使作為氰酸酯樹脂Α之酚醛清漆型氰酸酯樹脂（日本龍沙公 101113167 57 201247415 司製造’ PrimasetPT-30)25重量份、作為環氧樹脂A之聯笨芳 院基型驗搭清漆環氧樹脂（日本化藥公司製造，NC-3000)25重 量份、作為苯氧樹脂A之上述所製作之含有雙紛苯乙_構造 的苯氧樹脂10重量份、及作為硬化促進劑之咪唑化合物（四國 化成工業公司製造，1-苄基-2-苯基咪唑)〇_4重量份於曱基乙基 酮中溶解、分散。進而添加作為填充材A之球狀二氧化矽 (Admatechs公司製造，SO-32R，平均粒徑1 μηι)39重量份、 作為偶合劑Α之γ-環氧丙氧基丙基三甲氧基矽烧(GE東芝聚石夕 氧公司製造，Α187)0.2重量份、及作為著色劑a之酞菁藍/笨 并咪唑酮/曱基乙基酮（=1/1/8)混合物：（山陽色素公司製造)以 固形物成分計為0.4重量份，使用高速攪拌裝置攪拌3〇分鐘， 並以使不揮發成分成為50重量％之方式調整，調整樹脂組成 物之清漆G(樹脂清漆G)。 使用模塗裝置，以乾燥後之樹脂層之厚度成為14 〇 μιη的方 式將樹脂清漆G塗佈於PET膜(聚對苯二甲酸乙二酯，帝人杜 邦膜公司製造之Purex膜，厚度36μιη)上，利用16〇ΐ之乾燥 裝置將其乾燥5分知，獲得第一樹脂層用之附有pet膜之樹 脂片材E(載體材料E)。 又，以乾燥後之樹脂層之厚度成為9.〇 μιη的方式將樹脂清 漆G同樣地塗佈於PET膜上’利用16()ΐ之乾燥機乾燥5分 鐘’獲得第二樹脂層用之附有PET獏之樹脂片材F(載體材料 F)。 101113167 58 201247415 於玻璃纖維基材(厚度15μιη，UnitikaGlassFibers公司製造 之E玻璃織布，E〇2ZG4 53SK，ipc規格1G15，線膨服係數· 5.5 PPm/°C )之兩面上，以樹脂層與纖維基材相對向之方式配置 第-樹脂層狀_材料E及第二_旨制之載體材料f，利 用圖2所示之真空層壓裝置及熱風乾燥裝置使樹脂組成物含 浸，獲得積層有PET膜之阻焊劑層A。 具體而έ，於玻璃纖維基材之兩面上，將載體材料E及載 體材料F以位於玻璃纖維基材之寬度方向之中心的方式分別 豐合’並於自常壓減壓9.999x104 Pa(約750 T〇rr)以上之條件 下使用80°C之層壓輥進行接合。 此處於玻璃纖維基材之寬度方向尺寸之内側區域中，使載 體材料E及载體材料F之樹脂層分別與玻璃纖維基材之兩面側 接合’且於麵纖維基材之寬度方向尺寸之外舰域中，使載 體材料E及紐材料F之職層彼此接合。 繼而’使上述經接合者歷時2分鐘於設定為12G°C之橫向搬 送型之熱風乾職置内通過，藉此錢壓力發揮作用而進行加 熱處理，獲得阻焊劑層A。 此時第W脂層之厚度㈣為⑺阿，玻璃纖維基材層之 厚度為15 μιη，第二樹脂層之厚度(C2)為5 _，總厚度為％ μιη，C2/C1 為 〇.5。 4.電路基板之製造 於使用上述所獲得之附有金屬箱之積層板作為核基板、於其 101113167 59 201247415 兩面上形成有電路圖案(殘銅率70(^^/8 = 50/50 μπι)之内層電 路基板的表背面上，將上述所獲得之增層Α之第一樹脂層側 的PET膜剝離而疊合第一樹脂層。對其使用真空加壓式貼合 裝置，於溫度150°C、壓力1 MPa、時間120秒鐘之條件下進 行真空加熱加壓成形。其後’利用熱風乾燥裝置於22〇〇c進行 60分鐘加熱硬化，將第二樹脂層侧之ρΕτ膜剝離。繼而，利 用碳酸雷射形成盲通孔(非貫通孔）。繼而，將通道内及樹脂層 表面於60 C之膨潤液(Atotech Japan公司製造，Swelling Dip Securigant P)中浸潰5分鐘，進而於8〇。〇之過錳酸鉀水溶液 (Atotech Japan 公司製造，c〇ncentrate c〇mpact cp)中浸潰 ι〇 分鐘後’中和並進行粗化處理。 於使其經由脫脂、觸媒賦予、活化之步驟後，形成約〇 5帅 之非電解鏟銅皮膜，並形賴敷阻劑層，將非電賴銅皮膜作 為供電層而形成1〇μπι之圖案電鑛銅，實施L/s = 5G/5〇卿之 微細電路加工。繼而，於利用熱風乾燥裝置於綱。C進行的 分鐘退火處理後，藉由快频耻除供電層。 繼而將上述所獲;^之阻焊冑彳層A之第—樹脂層側之PET 膜剝離而疊合第-_層，對其制真m切合裝置，於 酿度l5〇C、壓力1 MPa、時間⑽秒鐘之條件下進行真空加 熱加廢成形。其後，利用熱風乾燥裝置於22〇ΐ進行的分鐘 加熱硬化’將第二樹脂層側之ρΕτ膜剝離。繼而，以半導體 讀搭载塾等露出之方式利用碳酸雷射形成盲通孔（非貫通 101113167 201247415 孔）。 最後，於自阻焊劑層Α露出之電路層上形成非電解_層3 μπι’進而於其上形成包含非電解鍍金層Gl_之職層，將 所獲得之基板切割成50 mmx50mm之尺寸，獲得半導體封裝 用之電路基板。 5.半導體封裝之製造 利用覆晶接合裝置’藉由熱壓壓接將具有焊錫凸塊之半導體 元件（熱致電（Thermoelectric Generator，TEG)晶片，尺寸 20 mmx20 mm，厚度725 μπι)搭載於半導體封裝用之電路基板 上。Μ而’利用紅外線(IR ’ Infrared Ra(jiati〇n)回焊爐將焊錫凸 塊溶融接合後，填充液狀密封樹脂（住友電木公司製造， CRP-X4800B)，使該液狀密封樹脂硬化，藉此獲得半導體封 裝。再者，於溫度150°C、120分鐘之條件下使液狀密封樹脂 硬化。又，上述半導體元件之焊錫凸塊係使用由Sn/Ag/Cu組 成之無鉛焊錫而形成者。 (實施例2) 以預浸料2、預浸料8、預浸料2之順序，將各預浸料2之 兩面之PET膜剝離，以預浸料2之第一樹脂層分別與預浸料8 側接觸之方式將合計3片預浸料積層，除此以外，以與實施例 1相同之方式製造附有金屬箔之積層板、電路基板、半導體封 裝。 (實施例3) 101113167 61 201247415 以預浸料2、預浸料9、預浸料2之頻序，將各預浸料2之 兩面之哪膜_，以預浸料2之第1脂層分別與預浸料$ 側接觸之方式將合計3片顏料積層，除此以外，_實_ i相同之方式製造附有金職之制板、電路基板、半導體封 裝。 (實施例4) 以預浸料3、預浸料1〇、預浸料3之 <順序，將各預浸料3 之兩面之PET膜剝離，以預浸料3之第一、 义弟一樹脂層分別與預浸 料H)側接觸之方式，將合計3片預浸料積層，除此以外以 與實施例1相同之方式製造附有金以之積層板、電路基板、 半導體封裝。 (實施例5) 以預浸料4、預浸料11、預浸料4之丨丨β产 之顺序，將各預浸料4 之兩面之PET膜剝離，以預浸料4之坌,,, 乂乐一樹脂層分別與預浸 料11側接觸之方式將合計3片預浸料藉思 積層’除此以外，以與 實施例1相同之方式製造附有金屬箔之籍 〈積層板、電路基板、半 導體封裝。 (實施例6) 以預浸料5、預浸料12、預浸料s夕丨庇十 之順序，將各預浸料5 之兩面之PET膜剝離，以預浸料5之笛 & 弟一樹脂層分別與預浸 料12側接觸之方式將合計3片預浸料藉思 寸積層，除此以外，以與 實施m相同之方式製造附有金屬“積層板、電路基板、半 101113167 62 201247415 導體封裝。 (實施例7) 以預浸料6、預浸料12、預浸料6之順序，將各預浸料6 之兩面之PET膜剝離’以預浸料6之第—樹脂層分別與預浸 料12側接觸之方式將合計3片預浸料積層，除此以外，以與 實施例1相同之方式製造附有金屬箔之積層板、電路芙板、半 導體封裝。 (實施例8) 以預浸料4、預浸料13、預浸料13、預浸料4之順序，將 各預浸料4之兩面之PET膜剝離，以預浸料4之第一樹脂層 分別與預浸料13側接觸之方式將合計4片預浸料積層，除^ 以外，以與實施例1相同之方式製造附有金職之積層板、電 路基板、半導體封裝。 (實施例9) 以預浸料4、預浸料Μ、預浸料4之順序，將各預浸料* 之兩面之PET膜剝離，以預浸料4之第一樹脂層分別盘預浸 料Η側接觸之方式將合計3片預浸料積層，除此以外，以盘 實施例4目同之方式製造附有金屬羯之積層板、電路基板、半 導體封裝。 & (比較例1) 於比較例1中’以預浸料卜預浸料15、預浸料^之順序， 將各預浸料i之兩面之PET膜剝離，以預浸料i之第一樹脂 101113167 63 201247415 層分別與職料15側接觸之方式將合計3 #職料積層，除 此以外’以與實施例i相同之方式製造附有金屬羯之積層板、 電路基板、半導體封裝。 (比較例2) 於比較例2中，以預浸料2、預浸料16、預浸料2之順序， 將各預浸料2之兩面之pET膜剝離，以預浸料2之第一樹脂 層分別與預浸料16側接觸之方式將合計3片預浸料積層，除 此以外’以與實施例丨相同之方式製造附有金屬箔之積層板、 電路基板、半導體封裝。 對藉由各實施例及比較例而獲得之附有金屬箔之積層板、電 路基板、半導體封裝進行以下之各評價。將各評價與評價方法 一併示於以下。將所獲得之結果示於表3、4中。 (1) 線膨脹係數 對實施例及比較例中製作之附有金屬箔之積層板的銅箔進 行全面蚀刻，切出4 mmx40 mm之試片，使用熱力學分析儀 (TMA，Thermomechanical Analyzer)(TA Instruments 公司製造， Q400)，於5°C/分鐘之拉伸條件下自0°C升溫至280°C，測定 50°C時之厚度方向(XY方向）之線膨脹係數。 (2) 楊氏模數 對實施例及比較例中製作之附有金屬箔之積層板的銅箔進 行触刻，切出10 mm><60 mm之試片’使用動態黏彈性測定裂 置(TAInstruments公司製造，DMA983)，於升溫速度5°C/分鐘 101113167 64 201247415 之條件下進行測定。 (3)半導體封裝之翹曲量 使用/置度可調式雷射二維測定機(Hitachi Technologies andThe prepreg 5 was produced in the same manner as the prepreg i except that the above-obtained; ^P and the moon-like paint E were used. (Prepreg 6) The prepreg 6 was produced in the same manner as the prepreg 5 except that the thicknesses of the first resin layer and the second resin layer were changed to those shown in Table 2. (Prepreg 7) The resin varnish A obtained above was impregnated on an organic fiber substrate (Thick Production & 哗' Asahi Kasei Electronic Materials Co., Ltd. made of polystyrene and ten-seat resin fiber woven fabric, zyl〇nmz/AS type , filament #: 12μιη, filament number: _ bundle, (four) 49 fine mm 'transverse 49 root / 25 discussion, basis weight: 43 3 coffee 2, air permeability: (10).8 cmW / see, surface treatment: hybrid coupling agent Treatment, linear expansion coefficient (7) °C) ·· -6 Peng Guang C 'Young's modulus is 18 〇 上, Li's paper heating oven drying for 2 minutes, obtaining the material H organic fiber substrate layer thickness of 65树脂 'The resin layer of the same thickness (8:) is provided on both sides of the organic fiber substrate layer to have a total thickness of 81 μm. (Prepreg 8) A prepreg 8 was produced in the same manner as the prepreg 7, except that the resin varnish obtained above was used. .. (prepreg 9) In addition to changing the fiber substrate to an organic fiber substrate (thickness 65 μηι, Asahi Kasei 101113167 53 201247415 polybenzoxazole resin fiber woven fabric, Zylon 12 qing, number of filaments: 66 / bundle , 49 mm in length, 'weight> 43.3 g/m2, air permeability: 20.8 116Z/HM type manufactured by Electronic Materials Co., Ltd., filament: /25 mm, lateral 49/25 cmW/sec ^ : , , t^ Prepreg 9 was produced in the same manner as prepreg 8 except that M#^(25〇C): -6 ppm/t; and Young's modulus is Gpa. (Prepreg 10 to 12) Prepregs 1 to 12 were produced in the same manner as in the prepreg 9 except that the type of the resin varnish was changed to that shown in Table 2. (Prepreg 13) The thickness of the resin layer was changed to that shown in Table 2, and the fiber substrate to be used was changed to an organic fiber substrate (thickness: 43 μm, manufactured by Asahi Kasei Electronic Materials Co., Ltd. & The fiber woven fabric' is of the ημ type, and the linear expansion coefficient (25C): _6pPm/°C). The prepreg 13 is produced in the same manner as the prepreg 11. (Prepreg 14) In addition to changing the fiber substrate used to organic fiber ray (thickness 126 μηη, Polyphenyl benzene manufactured by Asahi Electronic Materials Co., Ltd. will be sold in Laiwei weaving, Zylon 273Z/HM type, linear expansion coefficient (ye In addition, the prepreg 14 was produced in the same manner as the prepreg 13. (Prepreg 15) The thickness of the tree 爿 θ layer was changed as shown in Table 2, and the fiber to be used 101113167 54 201247415 The substrate is changed to the surface _ base material (thickness % 哗, inspection (4) (6) 灿 (10) company K, E glass woven fabric, E_ 〇 4 5 dish, ipc specification (10) ❹, linear expansion coefficient · 5.5 ppm / c) The prepreg 15 was produced in the same manner as the dip 7. (Prepreg 16) The prepreg 16 was produced in the same manner as the prepreg (1) except that the resin varnish B obtained above was used. In the case of Comparative Example 2, the prepreg! ~16 (only the ?-load in the table is P1 16) was used to manufacture a laminated board, and the circuit board and the semiconductor package were manufactured using the laminated board. (Example 1) 1. The manufacture of laminates is based on the prepreg 1, prepreg 7, and prepreg 1 in the order of PET on both sides of each prepreg 1 In the way of the first layer of the prepreg i, the layer of the prepreg 7 is contacted, and a total of 3 pieces of the composite material are laminated, and the two sides of the obtained laminated body are laminated 12 _ (Mitsui Jinguang said that胁雷雷猪), at 220. (:, 3 MPa, heat and pressure forming 2 (4), thereby obtaining a laminated plate with metal ruthenium. The obtained nuclear layer of the laminated plate with the metal box (including the part of the laminated board) The thickness of the material is G.155 mm. In the present embodiment and the comparative example, the thickness of the material or layer is hardly changed before and after hardening. Therefore, the thickness of the core layer (including the portion of the laminate) becomes The total thickness of the immersion material. 101113167 55 201247415 2. The production of the layered layer is made of cyanic acid vinegar resin A, a varnish type cyanate resin (manufactured by Nippon Longsha Co., Ltd., PrimaSet PT-3 25), 25 parts by weight, as an epoxy 25 parts by weight of a resin A-based styrofoam epoxy resin (manufactured by Nippon Kayaku Co., Ltd., NC_3〇〇〇), which is a phenoxy resin A produced in the above-mentioned structure containing a bismuth acetophenone. 10 parts by weight of phenoxy resin, and a salivating compound as a hardening accelerator (four countries) The industrial company manufactures '1% of the base 2' phenyl group.) Q4 parts by weight is dissolved and dispersed in methyl ethyl ketone. Further, spherical sulphur dioxide as a filler A is added (manufactured by Admatechs Co., Ltd., SO-32R, 39 parts by weight of the average particle diameter i μιη), and 0.2 parts by weight of γ·glycidoxypropyltrioxyloxy Wei (manufactured by GE Toshiba Polymer Co., Ltd., A187) as a coupling agent, using a high-speed stirring device The mixture was stirred for 3 minutes, and the non-volatile content was adjusted to 50% by weight to adjust the varnish F (resin varnish F) of the resin composition. Using a die coating apparatus, the resin varnish F was applied to a PET film (polyethylene terephthalate), a Purex film manufactured by Teijin DuPont Film Co., Ltd., in such a manner that the thickness of the dried resin layer became 22. 〇μηη. On a thickness of 36 μm, the film was dried for 5 minutes using a 16 〇 < t drying apparatus to obtain a PET film (carrier material C) with a PET film for the first resin layer. Further, the resin varnish F was applied to the PET film in the same manner as the thickness of the dried resin layer was 11.0 μm, and the PET film was obtained by using a 16 (TC dryer for 5 minutes) to obtain a second resin layer. Resin sheet D (carrier material D) 101113167 56 201247415 On glass fiber substrate (thickness 15 μm, E glass woven fabric manufactured by Unitika Glass Fibers' E02Z 04 53SK ' IPC specification 1015, linear expansion coefficient: 5.5 ppm / The carrier material C for the first resin layer and the carrier material D for the second resin layer are disposed on opposite sides of the resin layer and the fiber substrate, and the vacuum lamination device shown in FIG. 2 is used. The hot air drying device impregnates the resin composition to obtain a buildup layer A in which a PET film is laminated. Specifically, the carrier material C and the carrier material D are placed on the both sides of the glass fiber substrate at the center of the width direction of the glass fiber substrate. The method of laminating is carried out under the conditions of normal pressure and pressure reduction of 9.999x104 Pa (about 750 Torr) or more, using a laminating roller of 80 ° C. Here, inside the width direction of the glass fiber substrate In the area The resin layer of the carrier material C and the carrier material D are respectively bonded to the both sides of the glass fiber substrate, and in the outer side region of the width direction dimension of the glass fiber substrate, the resin layers of the carrier material C and the carrier material d are made to each other. Then, the bonded person is passed through the hot air drying device set to 12 〇 (> in the horizontal transfer type for 2 minutes, whereby heat treatment is performed without causing pressure to function, and the buildup layer A is obtained. At this time, the thickness (III) of the first resin layer was 18 μm, and the thickness of the glass fiber substrate layer was 15 μm. The thickness (C2) of the second resin layer was 7 μm, the total thickness was 4 μm, and C2/C1 was 0.39. 3. The solder resist layer was produced as a cyanate resin 酚 phenol varnish type cyanate resin (Japan's Longshagong 101113167 57 201247415 Manufacture 'Priaset PT-30) 25 parts by weight, as an epoxy resin A a base-type varnish epoxy resin (manufactured by Nippon Kayaku Co., Ltd., NC-3000), 25 parts by weight, 10 parts by weight of a phenoxy resin having a bisphenol benzene structure as described above as phenoxy resin A, and As a hardening promotion The imidazole compound (manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-benzyl-2-phenylimidazole) 〇 4 parts by weight is dissolved and dispersed in the mercapto ethyl ketone. Further, spherical cerium oxide as the filler A is added. 39 parts by weight (manufactured by Admatechs Co., Ltd., SO-32R, average particle size: 1 μηι), γ-glycidoxypropyltrimethoxysulfonate as a coupling agent (GE Toshiba Polyxime Co., Ltd., Α187) 0.2 parts by weight, and a mixture of phthalocyanine blue/bromide imidazolidone/mercaptoethyl ketone (=1/1/8) as the colorant a: (manufactured by Shanyang Pigment Co., Ltd.) is 0.4 parts by weight based on the solid content. The mixture was stirred for 3 minutes using a high-speed stirring device, and the non-volatile content was adjusted to 50% by weight to adjust the varnish G (resin varnish G) of the resin composition. The resin varnish G was applied to a PET film (polyethylene terephthalate, Purex film manufactured by Teijin DuPont Film Co., Ltd., thickness 36 μm) by using a die coating apparatus so that the thickness of the dried resin layer became 14 〇μηη. On the other hand, it was dried by a drying apparatus of 16 Torr to obtain a resin sheet E (carrier material E) with a PET film for the first resin layer. Further, the resin varnish G was applied to the PET film in the same manner as the thickness of the dried resin layer was 9. 〇μηη, and dried by a dryer of 16 () for 5 minutes to obtain a second resin layer. PET sheet F (carrier material F). 101113167 58 201247415 Resin layer and fiber on both sides of glass fiber substrate (thickness 15μηη, E-glass woven fabric manufactured by UnitikaGlassFibers Co., Ltd., E〇2ZG4 53SK, ipc specification 1G15, linear expansion coefficient · 5.5 PPm/°C) The base material is disposed so as to be in a state in which the first resin layer _ material E and the second carrier material f are placed, and the resin composition is impregnated by the vacuum laminating apparatus and the hot air drying device shown in FIG. 2 to obtain a laminated PET. Solder resist layer A of the film. Specifically, on both sides of the glass fiber substrate, the carrier material E and the carrier material F are respectively abunded in a manner of being located at the center of the width direction of the glass fiber substrate, and are decompressed at a normal pressure of 9.999 x 104 Pa (about 750 T 〇 rr) The bonding was carried out using a laminating roll of 80 ° C under the above conditions. In the inner region of the width direction dimension of the glass fiber substrate, the resin layer of the carrier material E and the carrier material F are respectively bonded to both sides of the glass fiber substrate and are outside the width direction dimension of the surface fiber substrate. In the ship field, the carrier layer E and the layer of the material F are joined to each other. Then, the above-mentioned joined person was passed through the hot air drying position set to 12 G °C for 2 minutes, whereby the pressure was applied and heat treatment was performed to obtain the solder resist layer A. At this time, the thickness of the W-th grease layer (4) is (7), the thickness of the glass fiber substrate layer is 15 μm, the thickness of the second resin layer (C2) is 5 _, the total thickness is % μιη, and C2/C1 is 〇.5. . 4. The circuit board is manufactured by using the above-obtained metal-clad laminate as a core substrate, and a circuit pattern is formed on both sides of 101113167 59 201247415 (residual copper ratio 70 (^^/8 = 50/50 μπι) On the front and back surfaces of the inner layer circuit board, the PET film on the first resin layer side of the obtained layered layer is peeled off to laminate the first resin layer, and a vacuum pressure type bonding apparatus is used at a temperature of 150°. C. Vacuum heat and pressure molding was carried out under the conditions of a pressure of 1 MPa and a time of 120 seconds. Thereafter, the mixture was heat-cured at 22 ° C for 60 minutes by a hot air drying device, and the p Ε 膜 film on the second resin layer side was peeled off. A blind via hole (non-through hole) was formed by using a carbonic acid laser. Then, the surface of the resin layer and the surface of the resin layer were immersed in a 60 C swelling liquid (Stowing Dip Securigant P, manufactured by Atotech Japan Co., Ltd.) for 5 minutes, and then 8 〇 〇 〇 过 过 过 过 过 过 过 ( ( 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 过 ' 过 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' After the steps, form about 5 handsome non-electrolytic shovel copper film, and the layer of resist is applied, the non-electric copper film is used as the power supply layer to form the pattern of 1 〇μπι electro-mineral copper, and the fine circuit of L/s = 5G/5〇卿 is implemented. Then, after the minute annealing treatment by the hot air drying device is performed, the power supply layer is removed by the fast frequency. Then, the resin layer side of the solder resist layer A obtained by the above is obtained. The PET film is peeled off and the first layer is laminated, and the true m-cutting device is subjected to vacuum heating and waste forming under the conditions of a degree of l5 〇 C, a pressure of 1 MPa, and a time of (10) seconds. Thereafter, it is dried by hot air. In the minute heat-hardening performed at 22 ', the ρ Ε 膜 film on the second resin layer side was peeled off. Then, a blind via hole (non-through 101113167 201247415 hole) was formed by a carbonic acid laser so as to be exposed by semiconductor readout. Forming an electroless layer 3 μπι′ on the circuit layer exposed from the solder resist layer and forming a layer containing the electroless gold plating layer G1_ thereon, and cutting the obtained substrate into a size of 50 mm×50 mm to obtain a semiconductor Circuit board for packaging. In the manufacture of a conductor package, a semiconductor device (a thermoelectric (TEG) wafer having a size of 20 mm x 20 mm and a thickness of 725 μm) having solder bumps is mounted on a semiconductor package by thermocompression bonding. On the circuit board, the solder bump is melted and joined by an infrared (IR' Infrared Ra (jiati〇n) reflow furnace, and then filled with a liquid sealing resin (manufactured by Sumitomo Bakelite Co., Ltd., CRP-X4800B) to make the liquid The sealing resin is hardened, whereby a semiconductor package is obtained. Further, the liquid sealing resin was cured at a temperature of 150 ° C for 120 minutes. Further, the solder bump of the above semiconductor element is formed using a lead-free solder composed of Sn/Ag/Cu. (Example 2) The PET film on both sides of each prepreg 2 was peeled off in the order of prepreg 2, prepreg 8, and prepreg 2, and the first resin layer of prepreg 2 was separately prepreg A metal foil-clad laminate, a circuit board, and a semiconductor package were produced in the same manner as in Example 1 except that a total of three prepreg layers were laminated. (Example 3) 101113167 61 201247415 Which film on both sides of each prepreg 2 is in the order of prepreg 2, prepreg 9, and prepreg 2, and the first fat layer of prepreg 2 In the same manner as in the case where the prepreg is in contact with the side of the prepreg, a total of three pieces of pigment are laminated, and in the same manner as in the case of the prepreg, a board made of gold, a circuit board, and a semiconductor package are manufactured. (Example 4) The PET film on both sides of each prepreg 3 was peeled off in the order of prepreg 3, prepreg 1 〇, and prepreg 3, and the first prepreg 3, Yidi A laminated board, a circuit board, and a semiconductor package with gold were produced in the same manner as in Example 1 except that a resin layer was placed in contact with the side of the prepreg H). (Example 5) The PET film on both sides of each prepreg 4 was peeled off in the order of the production of the prepreg 4, the prepreg 11, and the prepreg 4, and the prepreg 4 was used. In the same manner as in the first embodiment, a laminated metal sheet with a metal foil is produced in the same manner as in the first embodiment, in which the resin layer is in contact with the prepreg 11 side, respectively. Circuit board, semiconductor package. (Example 6) The PET film on both sides of each prepreg 5 was peeled off in the order of the prepreg 5, the prepreg 12, and the prepreg s 丨 十 ,, to the prepreg 5 笛 & A metal laminated board, a circuit board, and a half 101113167 62 were fabricated in the same manner as the implementation of m, in which a total of three prepregs were laminated in a manner in which a resin layer was in contact with the side of the prepreg 12, respectively. 201247415 Conductor package. (Example 7) The PET film on both sides of each prepreg 6 was peeled off in the order of prepreg 6, prepreg 12, and prepreg 6 to the first resin layer of prepreg 6. A metal foil-clad laminate, a circuit board, and a semiconductor package were produced in the same manner as in Example 1 except that a total of three prepregs were laminated in contact with the prepreg 12 side. 8) The PET film on both sides of each prepreg 4 is peeled off in the order of prepreg 4, prepreg 13, prepreg 13, and prepreg 4, and the first resin layer of prepreg 4 is respectively In the manner in which the prepreg 13 is in contact with each other, a total of four prepreg layers are laminated, and a product with a gold job is manufactured in the same manner as in the first embodiment. Plate, circuit board, and semiconductor package. (Example 9) The PET film on both sides of each prepreg* was peeled off in the order of prepreg 4, prepreg, and prepreg 4, and prepreg 4 was used. A laminate of metal iridium, a circuit board, and a semiconductor package are manufactured in the same manner as in the disk embodiment 4 except that the first resin layer is laminated on the side of the disk prepreg, and a total of three prepregs are laminated. & (Comparative Example 1) In Comparative Example 1, the PET film on both sides of each prepreg i was peeled off in the order of the prepreg prepreg 15 and the prepreg ^, and the prepreg i was used. The first resin 101113167 63 201247415 layer is in contact with the material 15 side, respectively, and the 3# service layer is aggregated, and otherwise, a laminate having a metal crucible, a circuit substrate, and a semiconductor package are manufactured in the same manner as in the embodiment i. (Comparative Example 2) In Comparative Example 2, the pET film on both sides of each prepreg 2 was peeled off in the order of prepreg 2, prepreg 16, and prepreg 2, and the first prepreg 2 was used. A total of three prepreg layers are laminated in such a manner that a resin layer is in contact with the prepreg 16 side, respectively. In the same manner, a metal foil-clad laminate, a circuit board, and a semiconductor package were produced in the same manner. The following evaluations were performed on the metal foil-clad laminate, the circuit board, and the semiconductor package obtained in each of the examples and the comparative examples. The evaluation and the evaluation methods are shown below. The results obtained are shown in Tables 3 and 4. (1) Linear expansion coefficient The copper foil of the metal foil-clad laminate produced in the examples and the comparative examples was subjected to the following. Thoroughly etched, cut a 4 mm x 40 mm test piece, and use a thermodynamic analyzer (TMA, Thermomechanical Analyzer) (TA Instruments, Q400) to raise the temperature from 0 ° C to 280 ° at 5 ° C / min. C. The linear expansion coefficient in the thickness direction (XY direction) at 50 ° C was measured. (2) Young's modulus The copper foil of the metal foil-clad laminate produced in the examples and the comparative examples was subjected to contact etching, and a test piece of 10 mm >< 60 mm was cut out using dynamic viscoelasticity measurement. (Manufactured by TA Instruments, DMA 983), the measurement was carried out under the conditions of a heating rate of 5 ° C / min 101113167 64 201247415. (3) The amount of warpage of the semiconductor package Using the adjustable laser two-dimensional measuring machine (Hitachi Technologies and

Services公司製造’型號LS220-MT100MT50)測定半導體封裝 之自至溫25°C至260°C為止之魅曲量。再者，測定方法係於上 述測定機之樣品室中使半導體元件面朝下而設置，測定晶片上 之18χ 18 mm之面内的高度方向之位移，將於室溫25°c之位移 差之最大值作為室溫時的翹曲值，將於260°C之位移值之最大 值作為260°C翹曲值，將於2點間溫度之翹曲值之變化量作為 翹曲量。 符號如下所述。 ◎ : 125 μιη 以下 〇：未滿125〜175 μιη X : 175 μιη 以上 由表3、4可表明’實施例1〜9之積層板與比較例1〜2之 積層板相比較’線膨服係數減小。 101113167 65 201247415 [表i] 樹脂清漆 樹脂清漆 樹脂清漆 樹脂清漆 樹脂清漆 A B C D E 環氧樹脂A 11.0 環氧樹脂B 14.0 環氧樹脂C 10.8 11.0 環氧樹脂D 15.6 氰酸酯接丨脂A 16.0 12.0 14.0 14.0 氰酸酯樹脂B 4.0 3.6 酚樹脂A 8.8 酚樹脂B 5.0 雙馬來酿亞胺化合物 20.0 胺化合物 3.5 笨氧樹脂A 填充材A 60.0 65.0 65.0 65.0 20.0 填充材B 5.0 5.0 5.0 填充材C 45.0 偶合劑A 0.2 0.2 0.2 0.2 0.5 硬化觸媒A 0.2 0.2 66 101113167 201247415 鬥3¾ 預浸料 總厚度 (μπι) P； P； Pi P； P； 00 oo m vo OO C2/C1 m m ο o m m o m m o ΓΛ 〇 o 1 j 1 1 1 t 1 1 1 1 fsi I 1 1 « 1 • 00 oo 00 OO 00 00 〇 o ΓΛ CO 第二樹脂 層厚度 (〇2)(μΓη) ΓΛ ro cn m v〇 1 1 1 < > 1 1 1 1 t 第一樹脂 層厚度 (ΟίΧμπι) ON Os 〇\ 〇\ Ό 1 1 1 1 1 1 1 1 i 1 纖維基材 層厚度 (μπι) in CN (N <N (N in (N Vi <N v〇 in v〇 v〇 v〇 IT) v〇 v〇 3 v〇 (N «η «Ο 纖維基材 製造商名 |曰東紡1 |曰東紡| 曰東紡 曰東紡 |曰東紡| |曰東紡| 旭化成| 旭化成 旭化成 旭化成 I旭化成 旭化成 旭化成 旭化成| Unitika Unitika 線膨脹係 數 2.8 ppm/°C 2.8 ppm/°C 2.8 ppm/°C 2.8 ppm/°C 2.8 ppm/°C 2.8 ppm/°C -6.0 ppm/°C -6.0 ppm/°C -6.0 ppm/°C -6.0 ppm/°C -6.0 ppm/°C -6.0 ppm/°C -6.0 ppm/°C -6.0 ppm/°C 5.5 ppm/°C 1 5.5 ppm/°C IPC Style | #1037 | #1037 #1037 #1037 | #1037] #1037 1 1 1 1 1 1 1 t #1080 #1080 商品名 WTX1037-53-X133 WTX1037-53-X133 WTX1037-53-X133 WTX1037-53-X133 WTX1037-53-X133 WTX1037-53-X133 116Z/AS 型 116Z/AS 型 116Z/HM 型 | 116Z/HM 型 116Z/HM 型 116Z/HM 型 054Z/HM 型 273Z/HM 型 Ε06Β 04 53SK E06B 04 53 SK 附有PET膜之樹脂片材 第二樹脂 層厚度 1 (μπι) 〇 o o o o ΓΛ 1 1 t 1 1 1 1 » 1 1 第一樹脂 層厚度 (μηι) v〇 VO Ό VO 1 1 1 1 1 1 « 1 1 t '樹脂清漆 樹脂清漆A 樹脂清漆B 樹脂清漆c 1樹脂清漆D I 樹脂清漆E 樹脂清漆E 樹脂清漆A 樹脂清漆B 樹脂清漆B 樹脂清漆C 樹脂清漆D 樹脂清漆E 樹脂清漆D 樹脂清漆D 樹脂清漆A 樹脂清漆B Ph PL, z v〇 Ph 卜 Ph 00 CL, £ Ο 0- Pu, rg m 寸 5： in CL. 不對稱 Ϊ Z.9 slnuol 201247415 實施例1 實施例2 實施例3 實施例4 實施例5 核層厚度(mm) 0.155 0.155 0.155 0.155 0.155 核層構成 P1+P7+P1 P2+P8+P2 P2+P9+P2 P3+P10+P3 P4+P11+P4 ply數 3 3 3 3 3 線膨脹係數(ppm/°C) 2.3 1.8 1.8 1.2 2.9 楊氏模數(30°C)(GPa) 18 25 32 35 33 半導體封裝翹曲量 〇 ◎ ◎ ◎ ◎ [表3] 實施例6 實施例7 實施例8 實施例9 0.155 0.155 0.200 0.220 P5+P12+P5 P6+P12+P6 P4+P13+P13+P4 P4+P14+P4 3 3 4 3 1.9 4.8 2.6 2.8 34 33 34 34 ◎ ◎ ◎ ◎ [表4]The service company manufactured by Model LS220-MT100MT50 measures the amount of charm of the semiconductor package from 25 ° C to 260 ° C. Further, the measurement method is performed by placing the semiconductor element face down in the sample chamber of the measuring machine, and measuring the displacement in the height direction in the plane of 18 χ 18 mm on the wafer, and the displacement difference at room temperature of 25 ° C. The maximum value is the warpage value at room temperature, and the maximum value of the displacement value at 260 ° C is taken as the warpage value of 260 ° C, and the amount of warpage of the temperature between 2 points is used as the warpage amount. The symbols are as follows. ◎ : 125 μηη The following 〇: less than 125 to 175 μηη X : 175 μιη The above Tables 3 and 4 indicate that 'the laminate of Examples 1 to 9 is compared with the laminate of Comparative Examples 1 to 2'. Reduced. 101113167 65 201247415 [Table i] Resin varnish resin varnish resin varnish resin varnish resin varnish ABCDE epoxy resin A 11.0 epoxy resin B 14.0 epoxy resin C 10.8 11.0 epoxy resin D 15.6 cyanate ester blush A 16.0 12.0 14.0 14.0 Cyanate resin B 4.0 3.6 Phenol resin A 8.8 Phenol resin B 5.0 Bismaleimide compound 20.0 Amine compound 3.5 Stupid resin A Filler A 60.0 65.0 65.0 65.0 20.0 Filler B 5.0 5.0 5.0 Filler C 45.0 Coupler A 0.2 0.2 0.2 0.2 0.5 Hardening Catalyst A 0.2 0.2 66 101113167 201247415 Bucket 33⁄4 Total thickness of prepreg (μπι) P; P; Pi P; P; 00 oo m vo OO C2/C1 mm ο ommommo ΓΛ 〇o 1 j 1 1 1 t 1 1 1 1 fsi I 1 1 « 1 • 00 oo 00 OO 00 00 〇o ΓΛ CO Second resin layer thickness (〇2)(μΓη) ΓΛ ro cn mv〇1 1 1 <> 1 1 1 1 t First resin layer thickness (ΟίΧμπι) ON Os 〇\ 〇\ Ό 1 1 1 1 1 1 1 1 i 1 Fiber substrate thickness (μπι) in CN (N <N (N in (N Vi <N v〇in v〇v v〇IT) v〇v〇3 v〇(N «η «Ο Fiber substrate manufacturer name|曰东纺1|曰东纺|曰东纺曰东纺|曰东纺| |曰东纺|旭化化Asahi Kasei Asahi Kasei Asahi Kasei I Asahi Kasei Asahi Kasei Asahi Kasei Asahi Kasei | Unitika Unitika Linear Expansion Coefficient 2.8 ppm/°C 2.8 ppm/°C 2.8 ppm/°C 2.8 ppm/°C 2.8 ppm/°C 2.8 ppm/°C -6.0 ppm/° C -6.0 ppm/°C -6.0 ppm/°C -6.0 ppm/°C -6.0 ppm/°C -6.0 ppm/°C -6.0 ppm/°C -6.0 ppm/°C 5.5 ppm/°C 1 5.5 Ppm/°C IPC Style | #1037 | #1037 #1037 #1037 | #1037] #1037 1 1 1 1 1 1 1 t #1080 #1080 Trade name WTX1037-53-X133 WTX1037-53-X133 WTX1037-53- X133 WTX1037-53-X133 WTX1037-53-X133 WTX1037-53-X133 116Z/AS type 116Z/AS type 116Z/HM type | 116Z/HM type 116Z/HM type 116Z/HM type 054Z/HM type 273Z/HM type Ε06Β 04 53SK E06B 04 53 SK Resin sheet with PET film Second resin layer thickness 1 (μπι) 〇oooo ΓΛ 1 1 t 1 1 1 1 » 1 1 First resin layer thickness (μηι) v〇VO Ό VO 1 1 1 1 1 1 « 1 1 t 'Resin varnish resin varnish A Resin varnish B Resin varnish c 1 resin varnish DI resin varnish E resin varnish E resin varnish A resin varnish B resin varnish B resin varnish C resin varnish D resin varnish E resin varnish D resin varnish D resin varnish A resin varnish B Ph PL, zv〇Ph 卜 Ph 00 CL , £ Ο 0- Pu, rg m inch 5: in CL. Asymmetry Ϊ Z.9 slnuol 201247415 Example 1 Example 2 Example 3 Example 4 Example 5 Core layer thickness (mm) 0.155 0.155 0.155 0.155 0.155 nucleus Layer composition P1+P7+P1 P2+P8+P2 P2+P9+P2 P3+P10+P3 P4+P11+P4 ply number 3 3 3 3 3 Linear expansion coefficient (ppm/°C) 2.3 1.8 1.8 1.2 2.9 Young Modulus (30 ° C) (GPa) 18 25 32 35 33 Semiconductor package warpage 〇 ◎ ◎ ◎ ◎ [Table 3] Example 6 Example 7 Example 8 Example 9 0.155 0.155 0.200 0.220 P5+P12+P5 P6+P12+P6 P4+P13+P13+P4 P4+P14+P4 3 3 4 3 1.9 4.8 2.6 2.8 34 33 34 34 ◎ ◎ ◎ ◎ [Table 4]

比較例1 比較例2 核層厚度(mm) 0.155 0.155 核層構成 P1+P15+P1 P2+P16+P2 ply數 3 3 線膨脹係數(ppm/°C) 10 7 Sr 氏模數(30°C)(GPa) 24 28 半導體封裝翹曲量 X X 本申請案主張基於2011年4月14日提出申請之日本申請 案特願2011-90470號之優先權，並將其揭示之全部内容併 入至本文中。 【圖式簡單說明】 上述目的及其他目的、特徵及優點係藉由以下所述之合適 之實施形態及隨附於其之以下圖式而進一步明確。 圖1係表示本實施形態中之積層板之構成及其製造方法 的剖面圖。 68 101113167 201247415 圖2係表示本實施形態中之預浸料之製造方法的剖面圖。 圖3係表示本實施形態中之附有金心之積層板的構成 之剖面圖。 圖4係表示本實施形態中之附有增層之積層板的構成之 吾ij面圖。. 圖5係表示本實施形態中之增層之構成的剖面圖。 圖6係表示本實施形態令之電路基板之構成的剖面圖。 圖7係表示本實施形態中之附有阻焊劑層之電路基板的 構成之剖面圖。 圖8係表示本實施形態中之阻焊劑層之構成的剖面圖。 圖9係表示本實施形態中之半導體封裝之構成的剖面圖。 圖1〇係表示本實施形態中之積層板之構成及其製造方法 的剖面圖。 圖11係表示本實施形態中之預浸料之製造方法的剖面 圖。 圖12係表示本實施形態中之預浸料之製造方法的剖面 圖。 圖13係表示本實施形態中之預浸料之製造方法的剖面 圖。 【主要元件符號說明】 la 第1塗佈裝置 lb 第2塗佈裝置 101113167 69 201247415 2 塗佈前端部 2a 第1塗佈前端部 2b 第2塗佈前端部 3 纖維基材 4 樹脂清漆 5a 載體材料 5b 載體材料 11 纖維基材 21 預浸料 60 真空層壓裝置 61 層壓輥 62 熱風乾燥裝置 100 積層板 101 第一玻璃纖維基材層 102 第二玻璃纖維基材層 110 積層板100之至少一面 200 附有金屬箔之積層板 201 第一預浸料 202 第二預浸料 203 第三預浸料 204 含有纖維基材層之預浸料 210 金屬箔 101113167 70 201247415 300 積層板 301 第三纖維基材層 303 增層 310 增層之表面 400 電路基板 401 佈線層 403 通道孔 405 通孔 500 電路基板 501 第四纖維基材層 503 阻焊劑層 510 阻焊劑層之表面 600 半導體封裝 601 半導體元件 603 凸塊 605 底部填充劑 700 積層板 A1 第一玻璃纖維基材層101之中心線 • A2 第二玻璃纖維基材層102之中心線 • A3 第三纖維基材層301之中心線 A4 第四纖維基材層501之中心線 B1 積層板之中心線 101113167 71 201247415Comparative Example 1 Comparative Example 2 Core layer thickness (mm) 0.155 0.155 Nuclear layer composition P1+P15+P1 P2+P16+P2 ply number 3 3 Linear expansion coefficient (ppm/°C) 10 7 Sr's modulus (30°C (GPa) 24 28 Semiconductor package warpage amount XX This application claims priority based on Japanese Patent Application No. 2011-90470, filed on Apr. 14, 2011, the entire content of in. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, and advantages of the invention will be apparent from the appended claims appended claims Fig. 1 is a cross-sectional view showing the configuration of a laminated board and a method of manufacturing the same according to the embodiment. 68 101113167 201247415 Fig. 2 is a cross-sectional view showing a method of manufacturing a prepreg according to the embodiment. Fig. 3 is a cross-sectional view showing the structure of a laminated core with a gold core in the embodiment. Fig. 4 is a plan view showing the structure of a laminated board with a buildup layer in the present embodiment. Fig. 5 is a cross-sectional view showing the configuration of the buildup layer in the embodiment. Fig. 6 is a cross-sectional view showing the configuration of a circuit board of the embodiment. Fig. 7 is a cross-sectional view showing the configuration of a circuit board with a solder resist layer in the embodiment. Fig. 8 is a cross-sectional view showing the structure of a solder resist layer in the embodiment. Fig. 9 is a cross-sectional view showing the configuration of a semiconductor package in the embodiment. Fig. 1 is a cross-sectional view showing the configuration of a laminated board and a method of manufacturing the same according to the embodiment. Fig. 11 is a cross-sectional view showing a method of manufacturing a prepreg according to the embodiment. Fig. 12 is a cross-sectional view showing a method of manufacturing a prepreg according to the embodiment. Fig. 13 is a cross-sectional view showing a method of manufacturing a prepreg according to the embodiment. [Description of main component symbols] la First coating device lb Second coating device 101113167 69 201247415 2 Coating tip portion 2a First coating tip portion 2b Second coating tip portion 3 Fiber substrate 4 Resin varnish 5a Carrier material 5b carrier material 11 fiber substrate 21 prepreg 60 vacuum laminating device 61 laminating roller 62 hot air drying device 100 laminated plate 101 first glass fiber substrate layer 102 second glass fiber substrate layer 110 at least one side of the laminated plate 100 200 laminated sheet with metal foil 201 First prepreg 202 Second prepreg 203 Third prepreg 204 Prepreg 210 containing fibrous substrate layer Metal foil 101113167 70 201247415 300 Laminate 301 Third fiber base Material layer 303 build-up layer 310 build-up surface 400 circuit substrate 401 wiring layer 403 via hole 405 through hole 500 circuit substrate 501 fourth fiber base material layer 503 solder resist layer 510 solder resist layer surface 600 semiconductor package 601 semiconductor element 603 convex Block 605 Underfill 700 Laminate A1 Centerline of First Glass Fiber Substrate Layer 101 • A2 Centerline of Second Glass Fiber Substrate Layer 102 The third center line 301 of the fibrous base layer A3 A4 fourth fiber center line 501 of the base layer B1 Laminates centerline 101 113 167 71 201 247 415

D D1 D2 D3 D4 D5 D6 L 前端重複距離 第一玻璃纖維基材層101之中心線A1與第二玻璃 纖維基材層102之中心線A2的距離 積層板100之厚度 積層板100之至少一面110與第三纖維基材層301 之中心線A3的距離 增層之表面310與第三纖維基材層301之中心線 A3的距離 積層板100之至少一面110與第四纖維基材層501 之中心線A4的距離 阻焊劑層之表面510與第四纖維基材層501之中 心線A4的距離 塗佈間距離 101113167 72D D1 D2 D3 D4 D5 D6 L Front end repeat distance The distance between the center line A1 of the first glass fiber substrate layer 101 and the center line A2 of the second glass fiber substrate layer 102 The thickness of the laminate 100 is at least one side 110 of the laminate 100 The distance from the center line A3 of the third fiber base material layer 301 to the center line A3 of the third fiber base material layer 301 is at least one side 110 of the laminate 100 and the center of the fourth fiber base material layer 501. The distance between the surface 510 of the distance solder resist layer of the line A4 and the center line A4 of the fourth fibrous base material layer 501 is the distance between the coatings 101113167 72

Claims (1)

201247415 七、申請專利範圍： 1·一種積層板’其係依序將含有第一破璃纖維基材層之第 包含有機纖維基材層且不含玻璃纖維基材層之一層以上 之第二預浸料、及 含有第二玻螭纖維基材層之第三預浸料 積層而獲得。 2.如申請專利範圍第1項之積層板，其中， 於將上述第一玻璃纖維基材層之中心線與上述第二破螭 纖維基材層之中心線的距離設為D1， 將該積層板之厚度設為D2，且 將該積層板中所含之上述第一玻璃纖維基材層、上述第二 中’ η為3以上之整數）時， 滿足D2/n<Dl之條件。 3.如申請專利範圍第j201247415 VII. Patent application scope: 1. A laminated board comprising a second pre-containing organic fiber base material layer comprising a first glass fiber base material layer and not containing one layer of a glass fiber base material layer or more The dip material and the third prepreg layer containing the second glass fiber base material layer are obtained. 2. The laminated board according to claim 1, wherein the distance between the center line of the first glass fiber base material layer and the center line of the second broken fiber base material layer is D1, and the layer is laminated. When the thickness of the plate is D2 and the first glass fiber base material layer contained in the laminated plate and the second intermediate 'n is an integer of 3 or more, the condition of D2/n < Dl is satisfied. 3. If the scope of patent application is j 玻璃纖維紐層及上述有機纖維基材敎合計數設為η(其 項之積層板，其中， μιη以上且15〇 pm以 25 C之線膨脹係數為〇 ppm/°c 4.如申請專利範圍第 上述有機纖維基材層 以下。 項之積層板，其中， 5.如申請專利範圍第 @之積層板，其中 101113167 73 201247415 上述有機纖維基材層之楊氏模數為5〇 Gpa以上且4〇〇 GPa以下。 6.如申請專利範圍第丨項之積層板，其中， 構成上述有機纖維基材層之纖維基材為聚苯并今坐樹脂 纖維。 7·如申請專利範圍第i項之積層板，其中，該積層板之厚 度為0.6 mm以下。 8. 如申請專利範圍第！項之積層板，其中，該積層板之面 方向之線膨脹係數為_10ppm/°c以上且1〇卯m/t以下。 9. 如申請專利範圍第i項之積層板，其中，於該積層板之 至少單面上形成有金屬箔。 10. 如申請專利範圍第9項之積層板，其中，上述金屬箔 為銅箔。 u.如申請專利範圍第1項之積層板，其中， 上述第一玻璃纖維基材層及上述第二玻璃纖維基材層之 厚度為5 μιη以上且1〇〇 μιη以下。 12. 如申請專利範圍第1項之積層板，其中， 上述第一玻璃纖維基材層及上述第二玻璃纖維基材層之 線膨脹係數為3.5 ppm/〇C以下。 13. 如申請專利範圍第1項之積層板，其中， 上述第一玻璃纖維基材層及上述第二玻璃纖維基材層包 含T玻璃或S玻螭。 101113167 74 201247415 14. 如申請專利範圍第1項之積層板，其中， 於該積層板之上部進而形成有包含第三纖維基材層之增 層，且 於在積層方向， 將該積層板之上述一面與上述增層中所含之上述第三纖 維基材層的中心線之距離設為D3， 將上述增層之表面與上述第三纖維基材層之中心線的距 離設為D4時， 滿足D3 > D4。 15. —種電路基板，係包含申請專利範圍第1至14項中任 一項之積層板。 16. 如申請專利範圍第15項之電路基板，其中， 於該電路基板之上部進而形成有包含第四纖維基材層之 阻焊劑層，且 於在積層方向， 將上述一面或上述增層之表面與上述第四纖維基材層的 中心線之距離設為D5， 將上述阻焊劑層之表面與上述第四纖維基材層之中心線 的距離設為D6時， 滿足D5 > D6。 17. —種半導體封裝，其係於申請專利範圍第15項之電路 基板上搭載有半導體元件。 101113167 75The glass fiber ruthenium layer and the above-mentioned organic fiber substrate have a count of η (the laminated board of the item, wherein, μιη or more and 15 〇 pm with a linear expansion coefficient of 25 C is 〇ppm/°c. 4. Patent application scope The above-mentioned organic fiber base material layer is the following. The laminated board of the item, wherein, 5. The laminated board of the patent application range @101113167 73 201247415 The Young's modulus of the above organic fiber base material layer is 5 〇 Gpa or more and 4 〇〇GPa or less. 6. The laminated board according to the ninth aspect of the invention, wherein the fibrous base material constituting the organic fiber base material layer is a polybenzo benzoic resin fiber. The laminated board, wherein the laminated board has a thickness of 0.6 mm or less. 8. The laminated board of the scope of the application of the patent item, wherein the linear expansion coefficient of the surface direction of the laminated board is _10 ppm/°c or more and 1〇.卯m/t or less. 9. The laminated board of claim i, wherein a metal foil is formed on at least one side of the laminated board. 10. The laminated board of claim 9 of the patent application, wherein The above metal foil is copper foil The laminate of the first glass fiber substrate layer and the second glass fiber substrate layer has a thickness of 5 μm or more and 1 μm or less. The laminate according to the first aspect, wherein the first glass fiber base material layer and the second glass fiber base material layer have a linear expansion coefficient of 3.5 ppm/〇C or less. 13. The laminate of the first aspect of the patent application scope The plate, wherein the first glass fiber substrate layer and the second glass fiber substrate layer comprise T glass or S glass. 101113167 74 201247415 14. The laminate according to claim 1, wherein the laminate The upper portion of the plate is further formed with a buildup layer including a third fibrous base material layer, and in the stacking direction, the distance between the one side of the laminated plate and the center line of the third fibrous base material layer contained in the buildup layer When D3 is set, the distance between the surface of the build-up layer and the center line of the third fiber base material layer is D4, and D3 > D4 is satisfied. 15. The circuit board includes patent claims 1 to 14 item The circuit board of claim 15, wherein the circuit board of claim 15 further comprises a solder resist layer comprising a fourth fiber substrate layer on the upper portion of the circuit substrate, and in the lamination direction, When the distance between the surface of the one surface or the additional layer and the center line of the fourth fiber base layer is D5, and the distance between the surface of the solder resist layer and the center line of the fourth fiber base layer is D6, It satisfies D5 > D6. 17. A semiconductor package in which a semiconductor element is mounted on a circuit board of claim 15 of the patent application. 101113167 75
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JP5736109B2 (en) * 2009-08-31 2015-06-17 日本シイエムケイ株式会社 Multilayer printed wiring board and double-sided printed wiring board

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3900921A4 (en) * 2018-12-18 2022-01-26 Showa Denko Materials Co., Ltd. Laminate, printed wiring board, semiconductor package, and method for manufacturing laminate
US11938688B2 (en) 2018-12-18 2024-03-26 Resonac Corporation Laminate, printed wiring board, semiconductor package, and method for manufacturing laminate

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TWI583560B (en) 2017-05-21
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WO2012140908A1 (en) 2012-10-18

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