201246516 六、發明說明： 【發明所屬之技術領域】 本發明係有關一種晶片型串聯式靜電抑制保護 元件及其製造方法，特別是指於基板上同時設有主線 路端與空氣放電端，提供該具有抑制靜電效果的晶片 型串聯式靜電抑制保護元件，得藉由主線路端直接串 •聯於電子元件的線路上，而且可提供阻抗匹配之作 用。 【先前技術】 過電壓保護或放電保護元件被廣泛應用於電話 機、傳真機、數據機等各種電子系統產品，尤其是電 子通訊設備，對於如何避免因為電壓異常或是因為靜 電放電（Electro-Static Discharge, ESD)而導致對 電子設備造成傷害損失的保護，尤其重要。 關於靜電放電的設計保護有多種方式，例如：屏 蔽（Shielding )保護、間隙放電（Gap)、 電容（Capacitor )、積層型MLV、半導體元件等， 其中以間隙放電做為過電壓防護的應用較為廣泛。 目前常被使用的空氣放電元件，主要是透過鑽石 刀片切割製程或雷射切割製程來形成間隙，由於使用 該等製程所形成的放電電極間距過高（約l〇〜 之間）’使得元件觸發能量會相對偏冑，故僅能適用 於雷擊或高能量突波的保護，對於電子通訊設備的靜 201246516 電保護則仍有不足。 只具備抑制靜電 ’還需要各別透 也谷易造成傳輸 而且，一般靜電放電保護元件多 放電的功能’當其組裝至電子設備時 過一條接地線才能使用，並不方便， 信號的衰減，影響傳輸的效率。 【發明内容】 有鑑於上述之缺點，本發明旨在提供 串：式靜電抑制保護元件及其製造方法，係於;= 同時設有主線路端與空氣放電端，其主線路端^ 串聯於線路上並提供阻抗㈣㈣ 提供靜電抑制效能者。 ^放電知則 其製之晶片型串聯式靜電抑制保護元件及 m 於主線路端與空氣放電端係同時設在 免ί外^’通過空氣放電端的靜電可直接接地，可避 免另外裝设接地線路之不便， ^ 明之次-目的。 w更達到“線路，為本發 明：晶片型串聯式靜電抑制保護元件及 = 由於保護元件上設有接地電極，其組裝 :::加線路致影響信號傳輸的問題，為本發明Π 一 下列詳細構成及其作用、功能，請參照 附圖所作之說明即可得到進-步的了解。 201246516 【實施方式】 本發明之晶片㉟串聯式靜電抑制保護元件，如第 !圖所示，係於-基板_上同時設有—主線路端· 與二空氣放電端3G1、3G2，主線料期係於兩電 極偶之間沉積一電阻201所形成；二空氣放電端 301、302則是在兩電極偶之間沉積一接地電極3〇〇， 再於該接地電極300和兩相對凸出的電極偶之間各 設置一架橋層401、402所形成。 上述本發明之晶片型串聯式靜電抑制保護元 件’其組裳於電子設備上使用日寺，提供從左側（或右 側）進入的電壓，部份電壓經第一空氣放電端3〇ι的 一次放電，另部份電壓則由主線路端2〇〇經第二空氣 放電端302的二次放電’由此提供進入右側(或左側) 的電壓可被有㈣抑制在最低安全範圍，以_保電子 設備之電路安全。 本Ιδ明之晶片型串聯式靜電抑制保護元件，其製 造步驟包括： 製備一基板100 ’該基板可選用氧化鋁基板或陶 瓷基板（如第2Α圖）； 將鈦化鎢/銅（TiW/ Cu)薄犋被覆在清潔過的基 板100上，作為種子層12(如第2B圖）； 在種子層12表面被覆一層光阻13(如第2C圖）； ‘曝光、顯影製程將部份光阻移除，使部分種子 層稞露出來；再於裸露的種子層上方沉積金屬電極使 201246516 形成電極偶2及-接地電極300(如第2D圖” 將未况積電極偶2及接地電極綱 阻移除’再於電極偶2上被覆光阻；#他… 經曝光、顯影製程將部份區域裸露出來，再於裸 露的區域上方沉積-電阻2〇1，並將電極偶2上的= 且移除’由此形成經電阻加連接兩側電極偶 31、32的主線路端200(如第2E圖）； =’在兩相對電極偶31、32的一端凸弧形部 311、321，與介於其間的接地電極3〇〇之間，各形 一中空氣室3A、3B，於中空氣室3A、3B的上方各 貼覆-組高分子材料乾膜材料作為架橋層術、搬， 架f層4〇1、402相對至中空氣室3A、3B的位置留 Μ孔4A、4B ;再以高分子材料乾膜貼覆於架橋層 4〇1、402的外部作為第一保護層51，以形成完全密 封中空氣室3A、3B的空氣放電端3〇1、3〇 2F 圖）； 以高分子材料乾膜貼覆於第一保護層5的外部 作為第二保護層52，以遮蔽所有氣隙並保護線路（如 第2G圖）； 實施背電極71材料及接地端電極711材料的被 覆’接地端電極7 α α由一設於基板上的孔7工2和基板 上方表面的接地電極3〇〇相通；以及，使用鎳-鉻"桌 -銅合金（Ni-Cr/Ni_Cu all〇y)作為端電極材料，進行 端電極72的被覆（如第2H圖）； 6 201246516 以W錫(m/Sn)作錫焊介面層73(如第2 。 所述電極偶2的材料可為 ^ .钮入a ^ ⑴口灸、錄、錄合 金、銘、銘&金'銀、銀合金、鈦、鈦合金、金、金 合金、錄，！白合金、絶、纪合金、鶴、鶴合金。 上述電阻3的材料可為 玻璃合金。 上述架橋層401、402的微 〜20Mm之間。 _4A 4B間距可為2 上述高分子材料可為環氧樹脂( (Polyimide)、壓克力（Ac^ 〜T亞月女 電材料(叫 〇鄉山叫或低介 伴二㈣製得之晶片型串聯式靜咖 保遠兀件，由於基板上同時兼具有主線路端與空氣放 =，貫施於電子產品時，可直接和線路 =不需另外製作接地線路，而且，經由兩組空2 電鳊作一次放電，能有效抑制靜電放電。 本發明之製造方法所製得的晶片型串聯式靜電 ㈣保護元件’實施時，空氣放電端8的中空氣室兩 =為=型電極偶端8A1相對至平直型接地端 3 ®所示）；或者’為雙弧型電極偶端8bi 雙弧型接地端8B2(如第4圖所示”或者，為 =弧型電極偶端8C1相對至平直型接地端们（如 ^圖所示）；或者1多段弧型電極偶端則相對 至夕段弧型接地端8D2(如第6圖所示）。 201246516 元件及m *發明之晶片型串聯式靜電抑制保護 1 ί;本法，確實具有新賴性及進步性之功 賜二，诸公開使用，合於專利法之規定，懇請 賜准專利’貫為德便。 需陳月者’以上所豸者乃是本發明較佳 =例’若依本發明之構想所作之改變，其產生之功= 在：二t:出忒明書與圖示所涵蓋之精神時’均應 在本發明之範圍内，合予陳明。 8 201246516 【圖式簡單說明】 之平面圖。 圖為本發明 之製造流程的視圖 第1圖為本發明 第2八圖至第21 和剖面圖。 第3圖為本發明之空翕始 第4圖為本發明之空：第二實施例圖 第…本發明之空::電電:::…例圖 “圖為本發明之空氣放電端:第第=;圖圖 【主要元件符號說明】 10 0 ·基板 201 :電阻 301、302 :空氣放電端 12 .種子層 2 :電極偶 311、321 :凸弧形部 4A、4B :微孔 52 :第二保護層 711 :接地端電極 72 :端電極 8 :空氣放電端 8A2 :平直型接地端 8B2 :雙弧型接地端 8C2 :平直型接地端 8D2 :多段弧型接地端 200 :主線路端 .接地電極 401、402:架橋層 13 .光阻 31 ' 32 :電極偶 3A、:中空氣室 51 :第一保護層 71 :背電極 712 :孔 7 3 :錫焊介面層 8A1 :雙弧型電極偶端 8B1 :雙弧型電極偶端 8C1 :多段狐型電極偶 8D1 :多段弧型電極偶201246516 VI. Description of the Invention: [Technical Field] The present invention relates to a wafer type series electrostatic suppression protection element and a method of manufacturing the same, and more particularly to providing a main line end and an air discharge end on a substrate, The wafer type series static suppression protection element having the effect of suppressing static electricity can be directly connected to the circuit of the electronic component by the main line end, and can provide impedance matching. [Prior Art] Overvoltage protection or discharge protection components are widely used in various electronic system products such as telephones, fax machines, and data machines, especially electronic communication equipment, for how to avoid voltage abnormalities or electrostatic discharge (Electro-Static Discharge) , ESD) is especially important for protection against damage caused by electronic equipment. There are many ways to protect the electrostatic discharge, such as Shielding protection, gap discharge (Gap), capacitance (Capacitor), laminated MLV, semiconductor components, etc. Among them, gap discharge is widely used as overvoltage protection. . Air-discharge components that are currently used are mainly formed by a diamond blade cutting process or a laser cutting process to form a gap, and the spacing of the discharge electrodes formed by using these processes is too high (between about 1 〇 )) The energy will be relatively biased, so it can only be applied to the protection of lightning strikes or high-energy surges. There is still a shortage of static 201246516 electrical protection for electronic communication equipment. It only has the function of suppressing static electricity. It also needs to be transmitted separately. It is also a function of multi-discharge of electrostatic discharge protection components. 'When it is assembled into an electronic device, it can be used after a grounding wire. It is not convenient, the attenuation of the signal, the influence The efficiency of the transmission. SUMMARY OF THE INVENTION In view of the above disadvantages, the present invention is directed to providing a string type electrostatic suppression protection element and a method of fabricating the same, wherein: = a main line end and an air discharge end are simultaneously provided, and a main line end thereof is connected in series to the line Provide impedance (4) (4) Provide static suppression performance. ^Discharge knows that the wafer type series static suppression protection element and m are provided at the same time at the main line end and the air discharge end system. The static electricity passing through the air discharge end can be directly grounded, and the grounding line can be avoided. Inconvenience, ^ Ming times - purpose. w is more "line, the invention: wafer type series static suppression protection element and = due to the grounding electrode provided on the protection element, its assembly::: the problem of signal transmission affecting the line, is the invention Π The composition, its function, and function can be further understood by referring to the description of the drawings. 201246516 [Embodiment] The chip 35 series static suppression protection element of the present invention, as shown in the figure: The substrate_ is simultaneously provided with a main line end and two air discharge ends 3G1 and 3G2. The main line period is formed by depositing a resistor 201 between the two electrode couples; the two air discharge ends 301 and 302 are at the two electrode couples. A ground electrode 3〇〇 is deposited between the ground electrode 300 and the two oppositely protruding electrode pairs. The wafer type series static suppression protection element of the present invention is described above. The group uses the Japanese temple on the electronic device to provide the voltage from the left side (or the right side), and some of the voltage is discharged once through the first air discharge end 3〇, and the other part is from the main line end. 2 The secondary discharge through the second air discharge end 302' thus provides a voltage that enters the right side (or the left side) can be suppressed (4) in the lowest safe range to ensure the circuit safety of the electronic device. The series-type electrostatic suppression protection component comprises the steps of: preparing a substrate 100', the substrate may be an alumina substrate or a ceramic substrate (as shown in FIG. 2); and coating the tungsten tungsten/copper (TiW/Cu) thin layer on the substrate On the substrate 100, as the seed layer 12 (as shown in FIG. 2B); the surface of the seed layer 12 is covered with a photoresist 13 (as shown in FIG. 2C); 'exposure and development processes remove part of the photoresist to make part of the seed The layer is exposed; the metal electrode is deposited over the exposed seed layer to form the electrode couple 2 and the ground electrode 300 in 201246516 (as shown in FIG. 2D). The electrode electrode couple 2 and the ground electrode are removed. Even 2 is coated with photoresist; #他... The exposed area is exposed by the exposure and development process, and then deposited on the exposed area - resistance 2〇1, and the electrode 2 is removed and removed' Connected to both sides of the electrode couple 31 via resistor 32 main line end 200 (as shown in FIG. 2E); = 'between the convex curved portions 311, 321 at one end of the two opposite electrode couples 31, 32, and the ground electrode 3 介于 interposed therebetween, each shape The air chambers 3A and 3B are respectively attached to the upper air chambers 3A and 3B, and the dry film materials of the polymer materials are used as a bridge layer and moved, and the f layers 4〇1 and 402 are opposed to the middle air chambers 3A and 3B. The remaining holes 4A, 4B are placed on the outside of the bridging layers 4A1, 402 as a first protective layer 51 by a dry film of a polymer material to form an air discharge end 3 of the air chambers 3A, 3B completely sealed. 1, 3〇2F Fig.); a dry film of a polymer material is attached to the outside of the first protective layer 5 as a second protective layer 52 to shield all air gaps and protect the lines (as shown in FIG. 2G); Material and grounding electrode 711 material coating 'grounding terminal electrode 7 α α is connected by a hole 7 provided on the substrate and a grounding electrode 3 上方 on the upper surface of the substrate; and, using nickel-chromium " table-copper Alloy (Ni-Cr/Ni_Cu all〇y) is used as the terminal electrode material, and the coating of the terminal electrode 72 is performed (as shown in FIG. 2H); 6 201246516 Tin (m/Sn) is used as the soldering interface layer 73 (as in the second. The material of the electrode couple 2 can be ^. Button a ^ (1) moxibustion, recording, recording gold, Ming, Ming & gold 'silver, silver alloy, titanium, titanium alloy, gold, gold alloy, recorded,! White alloy, absolute, alloy, crane, crane alloy. The material of the above resistor 3 may be a glass alloy. The bridging layers 401 and 402 are between 〜20Mm. _4A 4B spacing can be 2 The above polymer material can be epoxy (Polyimide), acrylic (Ac^~T Yayue female electrical material (called 〇乡山叫 or low-media with two (four) wafer type) The serial type static coffee protection device, because the substrate has both the main line end and the air release=, when applied to the electronic product, the line can be directly connected with the line=no need to make another ground line, and The discharge of the electric discharge can effectively suppress the electrostatic discharge. When the wafer type tandem electrostatic (four) protection element manufactured by the manufacturing method of the present invention is implemented, the middle air chamber of the air discharge end 8 is = the type electrode terminal 8A1 Relative to the straight ground terminal 3 ®); or 'for the double-arc electrode couple 8bi double-arc ground terminal 8B2 (as shown in Figure 4) or, = arc-shaped electrode coupler 8C1 is relatively flat Straight grounding ends (as shown in the figure); or 1 multi-segmented arc-shaped electrode terminals are opposite to the E-segment arc-shaped grounding end 8D2 (as shown in Figure 6) 201246516 Components and m *Invented wafer type series Static suppression protection 1 ί; This law does have the power of new and progressive For public use, in conjunction with the provisions of the Patent Law, please grant the patent 'through the virtues. Those who need Chen Yue' are the preferred ones of the present invention. If the changes are made according to the concept of the present invention, The merits of the production = in the two: t: the spirit of the book and the spirit of the illustrations should be within the scope of the invention, combined with Chen Ming. 8 201246516 [Simple description of the plan] Plan view BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a second perspective view of a second embodiment of the present invention. FIG. 3 is a perspective view of the present invention. FIG. Inventor of the invention::Electricity:::...Illustration "The figure is the air discharge end of the invention: the first =; Fig. [Main component symbol description] 10 0 · Substrate 201: Resistor 301, 302: Air discharge end 12 . Seed layer 2: electrode couples 311, 321 : convex curved portions 4A, 4B: micro holes 52: second protective layer 711: ground terminal electrode 72: terminal electrode 8: air discharge end 8A2: straight type ground terminal 8B2: double Arc ground terminal 8C2: Straight ground terminal 8D2: Multi-segment arc ground terminal 200: Main line end. Ground electrode 401, 402: Frame Layer 13. Photoresist 31 '32: electrode couple 3A,: middle air chamber 51: first protective layer 71: back electrode 712: hole 7 3: solder interface layer 8A1: double arc type electrode coupler 8B1: double arc type Electrode coupler 8C1: multi-stage fox-type electrode couple 8D1: multi-section arc type electrode couple