TW201234013A - Method for producing electrostatic capacitance device - Google Patents

Method for producing electrostatic capacitance device Download PDF

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Publication number
TW201234013A
TW201234013A TW101102866A TW101102866A TW201234013A TW 201234013 A TW201234013 A TW 201234013A TW 101102866 A TW101102866 A TW 101102866A TW 101102866 A TW101102866 A TW 101102866A TW 201234013 A TW201234013 A TW 201234013A
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Taiwan
Prior art keywords
substrate
fixed
movable
metal film
electrode
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TW101102866A
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Chinese (zh)
Inventor
Takumi Taura
Tomohiro Nakatani
Shin Okumura
Kazuo Goda
Kouji Goto
Hidekazu Yaji
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Panasonic Corp
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Publication of TW201234013A publication Critical patent/TW201234013A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0845—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration using a plurality of spring-mass systems being arranged on one common planar substrate, the systems not being mechanically coupled and the sensitive direction of each system being different

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

Penetrating silicon (23a, 23b, 24a, 24b) formed by causing silicon to penetrate in a manner so as to be exposed at both surfaces of an affixed-side substrate (2a) are considered affixed electrodes (20a, 20b, 21a, 21b), a metal film (25) is formed on the outside exposed surface of the penetrating silicon (23a, 23b, 24a, 24b), and a metal film (26) is formed in a manner so as to be separated from metal film (25) at a position other than the outside exposed surface of the penetrating silicon (23a, 23b, 24a, 24b) at the surface of the affixed-side substrate (2a). Also, during positive electrode connection of a mobile body substrate (1) and the affixed-side substrate (2a), using the metal films (25, 26), an electrical potential difference is provided between the affixed-side substrate (2a) and the mobile body substrate (1), while the penetrating silicon (23a, 23b, 24a, 24b) and the mobile body substrate (1) form in the same electrical potential.

Description

201234013 六、發明說明： 【發明所屬之技術領域】 本發明係關於靜電電容式裝置之製造方法。 【先前技術】 以往，以靜電電容式裝置而言，藉由樑來支持可動電 極的中央部，並且以由該樑所支持的中央部爲交界而使可 動電極的兩端側的重心位置形成爲非對稱，藉此在被輸入 加速度時使可動電極作擺動者已爲人所知（參照例如專利 文獻1 )。 在該專利文獻1中，將可動電極形成在作爲可動體基 板的矽基板，另一方面，將與可動電極相對向的固定電極 形成在作爲固定側基板的玻璃基板，藉由陽極接合而將兩 基板相接合。 但是，一般而言，在藉由陽極接合而將兩基板相接合 時，使被設在矽基板的壓接電極、與由形成在玻璃基板的 固定電極延伸設置的端子電極壓擠而導通，藉此使矽基板 與固定電極成爲同電位。 〔先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕日本特開2010-210419號公報 【發明內容】 (發明所欲解決之課題） -5- 201234013 但是，如上述習知技術般，在藉由使電極彼此壓擠而 以矽基板與固定電極成爲同電位的方式而導通的方法中， 會有在進行壓擠的接合面形成氧化膜等而產生導通不良之 虞。此外，若使用如上所示之壓擠構造，壓擠部分成爲應 力的發生起點而對構造體作用應力，會有對裝置特性造成 影響之虞。 因此，本發明之目的在獲得一種可抑制對裝置特性造 成影響的靜電電容式裝置之製造方法。 (解決課題之手段） 本發明之第1特徵之要旨爲一種靜電電容式裝置之製 造方法，其係具備有：形成有可動電極的可動體基板；及 形成有與前述可動電極相對向的固定電極，且被陽極接合 在前述可動體基板的固定側基板之靜電電容式裝置之製造 方法，其中，將以露出於前述固定側基板之兩面的方式使 矽貫穿所形成的貫穿矽形成爲前述固定電極，並且以矽形 成前述可動體基板之至少被陽極接合在前述固定側基板的 部位，在前述貫穿矽的外側露出面形成第1金屬膜，並且 在前述固定側基板的表面中的前述貫穿矽的外側露出面以 外的部位，以與前述第1金屬膜分離的方式形成第2金屬 膜，在將前述可動體基板與前述固定側基板進行陽極接合 時，使用前述第1金屬膜及第2金屬膜，在前述固定側基 板與前述可動體基板之間設置電位差，另一方面，使前述 貫穿矽與前述可動體基板成爲同電位。201234013 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of manufacturing a capacitive device. [Prior Art] In the conventional capacitive device, the center portion of the movable electrode is supported by the beam, and the center of gravity of the movable electrode is formed at the boundary between the center portion supported by the beam. Asymmetry is known, and it is known that the movable electrode is swung when an acceleration is input (see, for example, Patent Document 1). In Patent Document 1, a movable electrode is formed on a crucible substrate as a movable substrate, and a fixed electrode facing the movable electrode is formed on a glass substrate as a fixed substrate, and two are bonded by anodic bonding. The substrates are joined. However, in general, when the two substrates are joined by anodic bonding, the pressure-bonding electrode provided on the ruthenium substrate and the terminal electrode extended from the fixed electrode formed on the glass substrate are pressed and turned on. This makes the germanium substrate and the fixed electrode have the same potential. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] JP-A-2010-210419 SUMMARY OF INVENTION [Problem to be Solved by the Invention] -5-201234013 However, as in the above-described prior art, In the method in which the electrodes are pressed against each other and the crucible substrate and the fixed electrode are electrically connected to each other, an oxide film or the like is formed on the bonding surface to be pressed, and conduction failure occurs. Further, when the pressing structure as described above is used, the pressed portion becomes the starting point of the stress and the stress acts on the structure, which may affect the characteristics of the device. Accordingly, it is an object of the present invention to obtain a method of manufacturing a capacitance type device which can suppress an influence on device characteristics. (Means for Solving the Problem) The first aspect of the present invention provides a method of manufacturing a capacitance type device comprising: a movable body substrate on which a movable electrode is formed; and a fixed electrode formed to face the movable electrode And a method of manufacturing a capacitance type device in which the anode side is bonded to the fixed side substrate of the movable body substrate, wherein the through hole formed by the through hole is formed to be exposed to both surfaces of the fixed side substrate as the fixed electrode And forming at least a portion of the movable body substrate that is anodically bonded to the fixed side substrate by a crucible, forming a first metal film on an outer exposed surface of the through hole, and the through hole in the surface of the fixed side substrate The second metal film is formed to be separated from the first metal film in a portion other than the outer exposed surface, and the first metal film and the second metal film are used when the movable substrate and the fixed substrate are anodically bonded. Providing a potential difference between the fixed side substrate and the movable body substrate, and on the other hand Silicon substrate and the movable member becomes the same potential.

S -6- 201234013 本發明之第2特徵之要旨爲：使前述第2金屬膜與前 述貫穿矽的最短距離大於前述固定側基板的厚度。 本發明之第3特徵之要旨爲：前述第i金屬膜及第2 金屬膜的材料爲鋁。 本發明之第4特徵之要旨爲：前述可動體基板與前述 固定側基板的陽極接合係以晶圓級進行，遍及晶圓全面而 成膜在作爲前述固定電極之貫穿矽的外側露出面的第1金 屬膜彼此係藉由金屬配線而相互導通。 (發明之效果） 藉由本發明’在固定側基板與可動體基板之間設置電 位差，並且在將貫穿矽與可動體基板形成爲同電位的狀態 下，進行可動體基板與固定側基板的陽極接合。因此，無 須使用壓擠構造，即可進行陽極接合。結果，可抑制在接 合部分形成氧化膜而產生導通不良的情形，此外可抑制在 壓擠部分作用應力而對裝置特性造成影響的情形。 此外，由於使用金屬膜，在固定側基板與可動體基板 之間設置電位差，另一方面，使貫穿矽與可動體基板成爲 同電位，因此可更加確實進行電壓施加或同電位化。 【實施方式】 以下一面參照圖示，一面詳加說明本發明之實施形態 。以下係例示加速度感測器作爲靜電電容式裝置。此外， 將重錘部之形成有可動電極之側定義爲矽基板的表面側。 201234013 接著，將矽基板的短邊方向作爲χ方向、矽基板的長邊方 向作爲Y方向、矽基板的厚度方向作爲Z方向加以說明。 本實施形態之加速度感測器S係具備有：具有可動電 極4、5之作爲可動體基板的矽基板1;形成有與該矽基板 1的表面（第1圖的上面）作陽極接合而與可動電極4、5 相對向的固定電極20a、20b、21a、21b之作爲固定側基 板的上部固定板2a;及與矽基板1的背面（第1圖的下面 )相接合而成爲閉塞板的下部固定板2b。如上所示，本實 施形態之加速度感測器S係構成爲在上部固定板2a與下 部固定板2b之間夾持有矽基板1的感測器晶片。 矽基板1係藉由矽SOI基板所形成，如第1圖所示， 具備有：具有2個矩形框3a、3b的框架3;及在相對矩形 框2a、3b的側壁隔著間隙的狀態下配置成矩形框3a、3b 的矩形形狀的2個可動電極4、5。 可動電極4、5係藉由一對樑6a、6b及7a、7b而使 各個的側面的相對向的二邊的大致中央與矩形框3a、3b 的側壁相連結。亦即，其中一方可動電極4藉由樑6a、6b 而相對框架3以擺動自如的方式予以支持，並且另一方可 動電極5藉由樑7a、7b而相對框架3以擺動自如的方式 予以支持。其中，在本實施形態中，樑6a、6b及樑7a、 7b係相對矽基板1的Z方向（厚度方向）偏集於與上部 固定板2a相對向的表面側（第1圖的上面側）予以配置 。此外，在可動電極4、5的表背面係突設有用以防止可 動電極4、5直接衝撞固定電極20a、20b、21a、21b或後 -8 -S -6-201234013 According to a second aspect of the present invention, the shortest distance between the second metal film and the through hole is larger than the thickness of the fixed side substrate. According to a third aspect of the present invention, the material of the i-th metal film and the second metal film is aluminum. According to a fourth aspect of the present invention, the anodic bonding of the movable substrate and the fixed substrate is performed at a wafer level, and the entire surface of the wafer is formed over the entire surface of the through electrode of the fixed electrode. The metal films are electrically connected to each other by metal wiring. (Effect of the Invention) According to the present invention, a potential difference is provided between the fixed side substrate and the movable substrate, and the anode substrate is bonded to the fixed substrate in a state where the through substrate and the movable substrate are formed at the same potential. . Therefore, anodic bonding can be performed without using a squeeze structure. As a result, it is possible to suppress the formation of an oxide film at the joint portion to cause a conduction failure, and it is also possible to suppress the stress on the pressed portion and affect the device characteristics. Further, since the metal film is used, a potential difference is provided between the fixed side substrate and the movable body substrate, and the through hole and the movable body substrate have the same potential. Therefore, voltage application or the same potential can be surely performed. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following is an example of an acceleration sensor as an electrostatic capacitance device. Further, the side of the weight portion on which the movable electrode is formed is defined as the surface side of the ruthenium substrate. 201234013 Next, the short side direction of the ruthenium substrate is referred to as the χ direction, the long side direction of the ruthenium substrate is referred to as the Y direction, and the thickness direction of the ruthenium substrate is referred to as the Z direction. The acceleration sensor S of the present embodiment includes a crucible substrate 1 as a movable substrate having movable electrodes 4 and 5, and an anode bonded to a surface (upper surface of FIG. 1) of the crucible substrate 1 The fixed electrodes 20a, 20b, 21a, 21b facing the fixed electrodes 20, 5 are fixed to the upper fixing plate 2a of the fixed substrate, and the back surface of the cymbal substrate 1 (the lower surface of Fig. 1) is joined to form a lower portion of the blocking plate. Fixing plate 2b. As described above, the acceleration sensor S of the present embodiment is configured as a sensor wafer in which the 矽 substrate 1 is sandwiched between the upper fixing plate 2a and the lower fixing plate 2b. The ruthenium substrate 1 is formed of a 矽SOI substrate, and as shown in Fig. 1, a frame 3 having two rectangular frames 3a and 3b is provided, and a gap is formed between the side walls of the rectangular frames 2a and 3b. Two movable electrodes 4 and 5 having rectangular shapes arranged in the rectangular frames 3a and 3b. The movable electrodes 4, 5 are connected to the side walls of the rectangular frames 3a, 3b by the substantially center of the opposite sides of the respective side faces by the pair of beams 6a, 6b and 7a, 7b. That is, one of the movable electrodes 4 is slidably supported by the frame 3 by the beams 6a, 6b, and the other movable electrode 5 is supported by the frame 7a, 7b so as to be swingable with respect to the frame 3. In the present embodiment, the beams 6a and 6b and the beams 7a and 7b are disposed on the surface side (the upper surface side of the first drawing) facing the upper fixing plate 2a in the Z direction (thickness direction) of the base plate 1. Configure it. Further, on the front and back surfaces of the movable electrodes 4, 5 are provided to prevent the movable electrodes 4, 5 from directly colliding with the fixed electrodes 20a, 20b, 21a, 21b or the rear -8 -

S 201234013 述附著防止膜2 8、2 9的突起部4 1、5 1。此外，在矽基板 1的框架3表面形成有接地電極1〇。 此外’可動電極4、5係形成爲壁厚，亦具有作爲重 錘的功能。在本實施形態中，如第2圖（b)及第3圖所示， 在可動電極4的背側的交界線（在俯視下將樑6a與樑6b 的中心相連結的直線）Μ的其中一方側（第2圖（b)的下 側）形成有凹部1 1，可動電極4的重心偏向另一方側（第 2圖（b)的上側）。同樣地，在可動電極5的背側之與在可 動電極4設有凹部1 1的一方側爲相反的另一方側（第2 圖（b)的上側）形成有凹部1 1，可動電極5的重心偏向其 中一方側（第2圖（b)的下側）。接著，若以X方向或Z 方向被施加加速度時，可檢測以X方向及Z方向所被施加 的加速度。 上部固定板2a係藉由玻璃基板所形成，如第3圖所 示，相對可動電極4、5的表面隔著預定間隔而相對向配 置。接著，在上部固定板2a之與其中一方的可動電極4 相對向的面側，係在交界線Μ的其中一方側及另一方側分 別設有固定電極20a、20b。該固定電極20a、2 0b係相對 其中一方可動電極4的表面4a隔著預定間隔而相對向配 置。 此外，在上部固定板2a之與另一方的可動電極5相 對向的表面側，係在交界線Μ的其中一方側及另一方側分 別設有固定電極2 1 a、2 1 b，該固定電極2 1 a、2 1 b係相對 另一方可動電極5的表面隔著預定間隔而相對向配置。 -9 - 201234013 此外’如第1圖所示，在上部固定板2a之與接 極1〇相對向的位置形成有貫穿孔22a，透過該貫穿孑[ 而使接地電極1 〇露出於外部而進行配線，藉此使接 極10的電位’亦即可動電極4、5的電位取出於外部 下部固定板2b係藉由玻璃基板所形成，如第3 示’以在雙方的可動電極4、5的背面隔著預定間隔 向的方式作配置。接著，在該下部固定板2b的表面 與可動電極4、5的設置區域相對應的區域分別形成 著防止膜2 8、2 9 (參照第1圖）。 上述加速度感測器S係如以下進行製造。 首先，如第3圖所示，在矽基板1的表面側及背 ，藉由濕式蝕刻或乾式蝕刻等形成供可動電極4、5 之用的凹部32a、32b。此外，將矽基板1的背面側更 步蝕刻，藉此形成雙方的可動電極4、5及凹部11。 之後，將下部固定板2b與矽基板1的背面側作 接合，並且在上部固定板2a形成固定電極20a、20b、 、21b及貫穿孔22a，將該上部固定板2a與矽基板1 面側作陽極接合。 如上所示所構成的加速度感測器S若被施加以第 的箭號k所示的加速度時，雙方的可動電極4、5分 擺動運動，可動電極4、5的兩端側與固定電極20a、 、2 1 a、2 1 b之間的間隙d會改變，且該等間隙d間的 電容Cl、C2、C3、C4會改變。 已知此時的靜電電容C成爲c=exS/d(e :介 地電 ,2 2a 地電 〇 圖所 相對 係在 有附 面側 位移 進一 陽極 2 1a 的表 3圖 別作 20b 靜電 電係S 201234013 describes the protrusions 4 1 and 5 1 of the adhesion preventing films 2 8 and 29. Further, a ground electrode 1 is formed on the surface of the frame 3 of the ruthenium substrate 1. Further, the movable electrodes 4 and 5 are formed to have a wall thickness and also function as a weight. In the present embodiment, as shown in Figs. 2(b) and 3, a boundary line on the back side of the movable electrode 4 (a straight line connecting the beam 6a and the center of the beam 6b in plan view) is smashed therein. On one side (the lower side of FIG. 2(b)), the concave portion 1 is formed, and the center of gravity of the movable electrode 4 is biased to the other side (the upper side of FIG. 2(b)). Similarly, on the back side of the movable electrode 5, the other side (the upper side of the second drawing (b)) opposite to the side where the movable portion 4 is provided with the concave portion 1 1 is formed with the concave portion 1 1 and the movable electrode 5 The center of gravity is biased toward one of the sides (the lower side of Fig. 2(b)). Next, when acceleration is applied in the X direction or the Z direction, the acceleration applied in the X direction and the Z direction can be detected. The upper fixing plate 2a is formed by a glass substrate, and as shown in Fig. 3, the surfaces of the movable electrodes 4, 5 are opposed to each other with a predetermined interval therebetween. Next, on the surface side of the upper fixing plate 2a facing the movable electrode 4 of the one of the upper fixing plates 2a, the fixed electrodes 20a and 20b are provided on one of the side and the other side of the boundary line. The fixed electrodes 20a and 20b are disposed to face each other with a predetermined interval therebetween with respect to the surface 4a of one of the movable electrodes 4. Further, on the surface side of the upper fixing plate 2a facing the other movable electrode 5, fixed electrodes 2 1 a, 2 1 b are provided on one side and the other side of the boundary line, respectively, and the fixed electrode The 2 1 a and 2 1 b are arranged to face each other with a predetermined interval therebetween with respect to the surface of the other movable electrode 5 . -9 - 201234013 In addition, as shown in Fig. 1, a through hole 22a is formed at a position facing the pole 1〇 of the upper fixing plate 2a, and the grounding electrode 1 is exposed to the outside through the through hole [ By wiring, the potential of the contact 10 can be taken out, and the potential of the movable electrodes 4 and 5 can be taken out from the outer lower fixing plate 2b by the glass substrate, as shown in FIG. 3 to the movable electrodes 4 and 5 on both sides. The back side is arranged in a manner that is spaced apart by a predetermined interval. Next, the surfaces of the lower fixing plate 2b are formed in the regions corresponding to the installation regions of the movable electrodes 4 and 5, respectively, and the preventing films 28 and 29 are formed (see Fig. 1). The acceleration sensor S described above is manufactured as follows. First, as shown in Fig. 3, recesses 32a and 32b for the movable electrodes 4 and 5 are formed by wet etching or dry etching on the surface side and the back of the ruthenium substrate 1. Further, the back surface side of the ruthenium substrate 1 is further etched to form the movable electrodes 4 and 5 and the concave portion 11 of both sides. Thereafter, the lower fixing plate 2b is joined to the back side of the crucible substrate 1, and the fixed electrodes 20a, 20b, 21b and the through holes 22a are formed in the upper fixing plate 2a, and the upper fixing plate 2a and the side surface of the crucible substrate 1 are formed. Anodic bonding. When the acceleration sensor S configured as described above is applied with the acceleration indicated by the first arrow k, the movable electrodes 4 and 5 of the both sides are oscillated, and both end sides of the movable electrodes 4 and 5 and the fixed electrode 20a The gap d between 2, a, 2 1 b will change, and the capacitances C1, C2, C3, C4 between the gaps d will change. It is known that the electrostatic capacitance C at this time becomes c=exS/d (e: dielectric electricity, and 2 2a is similar to the surface of the second side of the anode 2 1a. 20b electrostatic system

S -10- 201234013 數，S :電極面積，d :間隙）’由該式，若間隙d變大， 靜電電容C會減少，若間隙d變小，則靜電電容C會增加 〇 在本實施形態中’所被檢測出的靜電電容c 1、C2、 C3、C4例如被送至由ASIC所構成的運算電路而求出X 方向的加速度及Z方向的加速度，而被輸出表示該加速度 的資料。 但是，在本實施形態中，將具備有其中一方的可動電 極4的第1加速度感測器單體Sa、及具備有另一方的可動 電極5的第2加速度感測器單體Sb配置在同一晶片面內 ，並且在將各自的加速度感測器單體Sa、Sb相對作1 80 度旋轉的狀態下進行配置（參照第1圖）。如上所示，將 第1加速度感測器單體Sa與第2加速度感測器單體Sb， 以各自的可動電極4及可動電極5的重心位置相對交界線 Μ彼此位於相反側的方式進行配置，藉此可檢測X方向及 Ζ方向的加速度。其中，關於求出X方向及Ζ方向的加速 度的方向及大小的運算處理，由於爲習知周知技術，故省 略說明。 在此，在本實施形態中，在上部固定板（固定側基板 )2a與矽基板（可動體基板）1之間設置電位差，並且在 將貫穿矽23a、23b、24a、24b與矽基板（可動體基板）1 形成爲同電位的狀態下，進行矽基板（可動體基板）1與 上部固定板（固定側基板）2a的陽極接合。 具體而言，如以下所示進行矽基板1與上部固定板2a -11 - 201234013 的陽極接合。 首先’如第1圖及第3圖所示，在上部固定板2a在 俯視下與可動電極4、5相對應的部位，亦即配置上述固 定電極20a、20b、21a、21b的部位，以露出於上部固定 板2a的表背兩面的方式使矽貫穿而形成複數貫穿矽23 a、 23b、24a、24b。接著，該貫穿矽 23a、23b、24a、24b 的 背面側即成爲固定電極20a、20b、21a、21b。 如上所示之玻璃埋入矽基板係例如在平坦的矽基板表 面形成凹陷，使矽基板之形成有凹陷的面疊合在平坦的玻 璃基板，藉由將玻璃基板加熱而將玻璃基板的一部分埋入 在該凹陷之中之後，使玻璃基板再固化，將平面基板的表 背面硏磨而去除矽而形成。 接著，以矽形成矽基板1之至少與上部固定板2a作 陽極接合的部位。 在本實施形態中，矽基板1的兩面周緣部與上部固定 板2a及下部固定板2b的周緣部分別作陽極接合。以該矽 基板1而言，在本實施形態中’係使用在由Si所構成的 矽活性層lb與由Si所構成的支持基板lc之間介在由 S i Ο 2所構成的埋入絕緣層1 a的S ◦ I基板。 如上所示，藉由使用SOI基板作爲矽基板1 ’以矽形 成砂基板1之至少與上部固定板2a作陽極接合的部位。 接著，在貫穿砂23a、23b' 24a、24b的外側露出面 形成作爲第1金屬膜的鋁膜25’並且在上部固定板23的 外側面周緣部（上部固定板2a的表面中的貫穿矽23a、S -10- 201234013 number, S: electrode area, d: gap) 'With this formula, if the gap d becomes larger, the capacitance C decreases, and if the gap d becomes smaller, the capacitance C increases. For example, the electrostatic capacitances c 1 , C2 , C3 , and C4 detected in the middle are sent to an arithmetic circuit composed of an ASIC to obtain an acceleration in the X direction and an acceleration in the Z direction, and a data indicating the acceleration is output. However, in the present embodiment, the first acceleration sensor unit Sa including one of the movable electrodes 4 and the second acceleration sensor unit Sb including the other movable electrode 5 are disposed in the same In the wafer surface, the respective acceleration sensor cells Sa and Sb are arranged to rotate at 180 degrees (see Fig. 1). As described above, the first acceleration sensor unit Sa and the second acceleration sensor unit Sb are arranged such that the positions of the centers of gravity of the respective movable electrodes 4 and the movable electrodes 5 are opposite to each other with respect to the boundary line Μ. Thereby, the acceleration in the X direction and the x direction can be detected. Here, the calculation processing for obtaining the direction and magnitude of the acceleration in the X direction and the Ζ direction is a well-known technique, and therefore, a description thereof will be omitted. Here, in the present embodiment, a potential difference is provided between the upper fixing plate (fixed side substrate) 2a and the cymbal substrate (movable body substrate) 1, and the through cymbals 23a, 23b, 24a, and 24b and the cymbal substrate are movable (movable) In the state where the bulk substrate 1 is formed at the same potential, the anodic substrate (movable substrate) 1 and the upper fixing plate (fixed side substrate) 2a are joined by anodic bonding. Specifically, the anode bonding of the crucible substrate 1 and the upper fixing plates 2a-11 to 201234013 is performed as follows. First, as shown in FIGS. 1 and 3, the upper fixing plate 2a is a portion corresponding to the movable electrodes 4 and 5 in plan view, that is, a portion where the fixed electrodes 20a, 20b, 21a, and 21b are disposed to be exposed. The plurality of through-holes 23a, 23b, 24a, and 24b are formed by penetrating the crucible so as to penetrate the front and back sides of the upper fixing plate 2a. Then, the back sides of the through turns 23a, 23b, 24a, and 24b are the fixed electrodes 20a, 20b, 21a, and 21b. The glass-embedded ruthenium substrate as described above is formed, for example, by forming a recess on the surface of a flat ruthenium substrate, and the surface on which the ruthenium substrate is formed with a recess is superposed on a flat glass substrate, and a part of the glass substrate is buried by heating the glass substrate. After entering the recess, the glass substrate is re-hardened, and the front and back surfaces of the planar substrate are honed to remove germanium. Next, at least a portion where the tantalum substrate 1 is anodically bonded to the upper fixing plate 2a is formed by ruthenium. In the present embodiment, the peripheral edge portions of both sides of the dam substrate 1 are anodic bonded to the peripheral portions of the upper fixing plate 2a and the lower fixing plate 2b, respectively. In the present embodiment, the ruthenium substrate 1 is used in a buried insulating layer composed of S i Ο 2 between a ruthenium active layer 1b made of Si and a support substrate lc made of Si. 1 a S ◦ I substrate. As described above, by using the SOI substrate as the ruthenium substrate 1', at least a portion of the ruthenium-formed substrate 1 which is anodic-bonded to the upper fixed plate 2a is used. Then, the aluminum film 25' as the first metal film is formed on the outer exposed surface of the through sands 23a, 23b' 24a, 24b and the outer peripheral side edge portion of the upper fixing plate 23 (the through-turn 23a in the surface of the upper fixing plate 2a) ,

S -12- 201234013 23b、24a、24b的外側露出面以外的部位）’以將作爲第 2金屬膜的鋁膜26與銘膜25分離的方式進行成膜。如上 所示，將鋁膜25與鋁膜26以不會彼此相接觸的方式進行 成膜，藉此抑制鋁膜25與銘膜26發生短路。 接著，將貫穿矽23a、23b、24a、24b透過鋁膜25及 金屬配線vv2進行接地’並且將矽基板1的周緣部透過金 屬配線w3進行接地’藉此貫穿矽23a、23b、24a、24b與 矽基板1即成爲同電位。 接著，對上部固定板2a之與矽基板1接合的接合部 (周緣部）透過鋁膜26及金屬配線wl施加電壓，在上部 固定板（固定側基板）2a與矽基板（可動體基板）1之間 設置電位差，藉此在將貫穿矽23a、23b、24a、24b與矽 基板（可動體基板）1形成爲同電位的狀態下，進行矽基 板（可動體基板）1與上部固定板（固定側基板）2a的陽 極接合。 亦即，在本實施形態中，在將矽基板（可動體基板） 1與上部固定板（固定側基板）2a進行陽極接合時，使用 鋁膜（第1及第2金屬膜）25、26，在上部固定彼（固定 側基板）2a與矽基板（可動體基板）1之間設置電位差， 並且使貫穿矽23a、23b、24a、24b與矽基板（可動體基 板）1成爲同電位。 此時，如第3圖所示，以將鋁膜（在上部固定板2a 的表面中的貫穿矽23a、23b、24a、24b的外側露出面以 外的部位，以與作爲第1金屬膜的鋁膜25分離的方式所 -13- 201234013 成膜的第2金屬膜）26與貫穿砂23a、23b、24a、 最短距離a設爲大於上部固定板2a的厚度b(a>l 適合。 在上部固定板2a與矽基板1的接合部、與貫室 、23b' 24a、24b的貫穿部均產生玻璃與矽的界面 若爲a<b，當對上部固定板2a的鋁膜26施加電壓 易在距離較近的貫穿矽23a、23b、24a、24b的貫 生接合反應。但是，若爲a>b，可抑制在貫穿砍 23b、24a、24b的貫穿部發生接合反應的情形，而 地在上部固定板2a與矽基板1的接合部發生接合β 此外，在本實施形態中係具備有複數個（在本 態中爲4個）作爲固定電極的貫穿矽，藉由金屬配 屬配線27及金屬配線w2 )而使成膜在各自的貫穿 、23b、2 4a、2 4b的鋁膜（成膜在複數貫穿矽的外 面的第1金屬膜）25相互導通（參照第6圖）。 如上所示，在本實施形態中係藉由金屬配線（ 線27及金屬配線W2)而使複數鋁膜25相互導通 以第4圖所示之晶圓級，進行矽基板（可動體基板 上部固定板（固定側基板）2a的陽極接合。 以下說明以晶圓級的陽極接合。 首先，藉由蝕刻等將1枚晶圓W進行加工， 在分斷時形成上述加速度感測器S的方式形成複數 極4、5等。 接著，將埋入有作爲固定電極20a、20b、21 24b的 > )較爲 声矽23a ，因此 時，容 穿部發 23a、 可積極 m 。 ,"Kit、 實施形 線（金 砂23a 側露出 金屬配 ，藉此 )1與 藉此以 可動電 a ' 2 1bS -12 - 201234013 23b, 24a, 24b, other than the outer exposed surface) is formed by separating the aluminum film 26 as the second metal film from the crystal film 25. As described above, the aluminum film 25 and the aluminum film 26 are formed so as not to be in contact with each other, whereby the aluminum film 25 and the film 26 are prevented from being short-circuited. Next, the through-holes 23a, 23b, 24a, and 24b are grounded through the aluminum film 25 and the metal wiring vv2, and the peripheral portion of the substrate 1 is grounded through the metal wiring w3, thereby passing through the turns 23a, 23b, 24a, and 24b. The germanium substrate 1 has the same potential. Next, a bonding portion (peripheral portion) of the upper fixing plate 2a joined to the crucible substrate 1 is applied with a voltage through the aluminum film 26 and the metal wiring w1, and the upper fixing plate (fixed side substrate) 2a and the crucible substrate (movable substrate) 1 are applied. By providing a potential difference therebetween, the crucible substrate (movable substrate) 1 and the upper fixing plate (fixed) are formed in the same state in which the through-turns 23a, 23b, 24a, and 24b and the tantalum substrate (movable substrate) 1 are formed at the same potential. Anode bonding of the side substrate 2a. In the present embodiment, when the tantalum substrate (movable substrate) 1 and the upper fixing plate (fixed side substrate) 2a are anodically bonded, aluminum films (first and second metal films) 25 and 26 are used. A potential difference is provided between the upper fixed side (fixed side substrate) 2a and the meandering substrate (movable body substrate) 1, and the through holes 23a, 23b, 24a, and 24b and the meandering substrate (movable body substrate) 1 have the same potential. At this time, as shown in FIG. 3, the aluminum film (the portion other than the outer surface of the through-holes 23a, 23b, 24a, and 24b in the surface of the upper fixing plate 2a is exposed to the aluminum film as the first metal film) In the manner in which the film 25 is separated, the second metal film 26 formed in the film 13-201234013 and the penetrating sands 23a, 23b, and 24a, the shortest distance a is set to be larger than the thickness b of the upper fixing plate 2a (a > l is suitable. The joint between the plate 2a and the base plate 1 and the through portions of the through chambers 23b' 24a and 24b each produce an interface of glass and tantalum, which is a < b, when a voltage is applied to the aluminum film 26 of the upper fixed plate 2a. The closer joining reaction of the weirs 23a, 23b, 24a, and 24b is relatively close. However, if it is a>b, it is possible to suppress the occurrence of the joining reaction in the penetrating portions of the through-cuts 23b, 24a, and 24b, and the ground is fixed at the upper portion. In the present embodiment, a plurality of (four in the present state) perforated crucibles are provided as a fixed electrode, and the metal distribution wiring 27 and the metal wiring w2 are provided. ) filming the aluminum film in each of the through, 23b, 24a, and 24b (film formation in Number of silicon through a first outer surface of the metal film) 25 is turned to each other (see FIG. 6). As described above, in the present embodiment, the plurality of aluminum films 25 are electrically connected to each other by the metal wiring (the wire 27 and the metal wiring W2) to form a germanium substrate (the upper portion of the movable substrate is fixed). Anode bonding of the board (fixed side substrate) 2a. The anodic bonding at the wafer level will be described below. First, one wafer W is processed by etching or the like, and the acceleration sensor S is formed at the time of breaking. The complex poles 4, 5, etc. Next, the sounding 矽 23a is embedded in the fixed electrodes 20a, 20b, and 21 24b. Therefore, the accommodating portion 23a can be positively m. , "Kit, implementation of the line (the gold sand 23a side exposed metal match, thereby) 1 and thereby to the movable electricity a ' 2 1b

S -14 - 201234013 的貫穿砍23a、23b、24a、24b的玻璃基板（分斷時 上部固定板2a的構件）’以貫穿矽23a、23b、24a 與可動電極4、5相對向的方式作載置。 接著，在玻璃基板的表面形成鋁膜（成膜在複數 矽之外側露出面的第1金屬膜）25。此時’在相鄰的 矽23a、23b的鋁膜25之間、及相鄰的貫穿矽24a 的鋁膜25之間設有使雙方鋁膜25相互導通的金屬配 。此外，使複數鋁膜25藉由金屬配線（金屬配線27 屬配線w2 )相互導通，並且透過金屬配線w2而使配 晶圓W外周的一部分的接地電極Wa導通。亦即’遍 圓W全面而使成膜在作爲固定電極20a、2 0b、21a 的貫穿矽23a、2 3 b、24a、24b的外側露出面的鋁膜（ 金屬膜）2 5彼此藉由金屬配線（金屬配線2 7及金屬 w2)而相互導通。 此外，在玻璃基板的表面形成鋁膜（相當於在上 定板2a的表面中的貫穿矽23a、23b、24a、24b的外 出面以外的部位，以與作爲第1金屬膜的鋁膜25分 方式所成膜的第2金屬膜）26。該鋁膜26係在玻璃 表面中進行分斷時形成在作爲加速度感測器S的周緣 部位。接著，該鋁膜26係透過金屬配線w 1而與以包 圓W的外周的方式所配置的電壓施加電極Wb相導通 其中，鋁膜25、鋁膜26、金屬配線27、金屬配| 及金屬配線w2可同時成膜，亦可任一者先成膜。 此外，矽基板1係如上所述透過金屬配線w3予 作爲 > 24b 貫穿 貫穿 、24b 線27 及金 置在 及晶 、21b 第1 配線 部固 側露 離的 基板 部的 圍晶 〇 泉wl 以接 -15- 201234013 地。 在該狀態下，對上部固定板2a之與矽基板1接合的 接合部（周緣部）透過電壓施加電極Wb而施加電壓，在 上部固定板（固定側基板）2a與矽基板（可動體基板）1 之間設置電位差，藉此可在將貫穿矽23a、23b、24a、24b 與矽基板（可動體基板）1形成爲同電位的狀態下總括進 行陽極接合。 亦即，使複數鋁膜2 5藉由金屬配線（金屬配線2 7及 金屬配線w2 )而相互導通’藉此可以晶圓級進行矽基板 (可動體基板）1與上部固定板（固定側基板）2a的陽極 接合。 其中，在本實施形態中係例示將由電壓施加電極Wb 施加至鋁膜26的電壓値設定爲-600V者，但是電壓値係 可按照進行陽極接合時的條件作適當設定。 此外，下部固定板2b側係未設有固定電極或可動電 極的部分，因此矽基板1與下部固定板2b的陽極接合係 可藉由習知的方法進行，但是亦可以與上部固定板2a相 同的方法進行陽極接合。 接著，鋁膜25、26或金屬配線wi、W2、w3及金屬 配線27之中，在殘留在表面的部分進行圖案化而將其他 部分去除。 原本鋁膜25、26或金屬配線wi、W2、w3及金屬配 線2 7係在進行陽極接合後予以去除者，但是在本實施形 態中，殘留鋁膜25，作爲隨後施行的打線接合的焊墊加以The glass substrate (the member of the upper fixing plate 2a at the time of breaking) of the through-cuts 23a, 23b, 24a, and 24b of S-14 - 201234013 is carried in such a manner that the through-holes 23a, 23b, and 24a face the movable electrodes 4 and 5 Set. Next, an aluminum film (a first metal film on which the film is exposed on the outer side of the plurality of ridges) 25 is formed on the surface of the glass substrate. At this time, a metal match is formed between the aluminum films 25 of the adjacent turns 23a and 23b and the aluminum film 25 of the adjacent through-holes 24a to cause the aluminum films 25 to be electrically connected to each other. In addition, the plurality of aluminum films 25 are electrically connected to each other by metal wiring (metal wiring 27 wirings w2), and the metal wirings w2 are passed through to electrically connect a part of the ground electrodes Wa of the outer periphery of the wafer W. In other words, the aluminum film (metal film) 25 which is formed on the outer side of the through-holes 23a, 2 3 b, 24a, and 24b as the fixed electrodes 20a, 20b, and 21a is formed by the metal. The wiring (metal wiring 27 and metal w2) is electrically connected to each other. Further, an aluminum film is formed on the surface of the glass substrate (corresponding to a portion other than the outgoing surface of the through-turns 23a, 23b, 24a, and 24b in the surface of the upper fixed plate 2a, and the aluminum film 25 as the first metal film The second metal film 26 formed by the method. The aluminum film 26 is formed on the peripheral portion of the acceleration sensor S when it is broken in the glass surface. Then, the aluminum film 26 is electrically connected to the voltage application electrode Wb disposed so as to surround the outer circumference of the circle W through the metal wiring w1, and the aluminum film 25, the aluminum film 26, the metal wiring 27, the metal wiring, and the metal wiring are electrically connected thereto. W2 can form a film at the same time, or any one can form a film first. Further, the ruthenium substrate 1 is passed through the metal wiring w3 as described above as a perforation 24 w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w Connected to -15- 201234013. In this state, a voltage is applied to the joint portion (peripheral portion) of the upper fixing plate 2a joined to the crucible substrate 1 through the voltage application electrode Wb, and the upper fixing plate (fixed side substrate) 2a and the crucible substrate (movable substrate) are applied. By providing a potential difference between each of them, anodic bonding can be collectively performed in a state where the through-holes 23a, 23b, 24a, and 24b and the tantalum substrate (movable body substrate) 1 are formed at the same potential. In other words, the plurality of aluminum films 25 are electrically connected to each other by the metal wires (the metal wires 27 and the metal wires w2), whereby the substrate (the movable substrate) 1 and the upper fixing plate (the fixed substrate can be performed at the wafer level). ) Anode bonding of 2a. In the present embodiment, the voltage 値 applied to the aluminum film 26 by the voltage application electrode Wb is set to -600 V, but the voltage 値 can be appropriately set in accordance with the conditions at the time of anodic bonding. Further, the lower fixing plate 2b side is not provided with a portion for fixing the electrode or the movable electrode, and therefore the anodic bonding of the dam substrate 1 and the lower fixing plate 2b can be performed by a conventional method, but can also be the same as the upper fixing plate 2a. The method is anodic bonding. Next, among the aluminum films 25 and 26 or the metal wirings wi, W2, w3 and the metal wiring 27, the portions remaining on the surface are patterned to remove the other portions. The original aluminum films 25 and 26 or the metal wires wi, W2, w3 and the metal wires 27 are removed after anodic bonding, but in the present embodiment, the aluminum film 25 remains as a bonding pad for subsequent bonding. Give

S -16- 201234013 利用。 接著，在進行晶圓級的陽極接合後，藉由分斷成 晶片來製造複數加速度感測器S。 其中，藉由活用殘留的鋁膜25作爲打線接合焊 使固定電極20a、20b及固定電極21a、21b的電位取 外部。 如以上說明所示，在本實施形態中，係在上部固 (固定側基板）2a與矽基板（可動體基板）1之間設 位差，並且在將貫穿矽23a、23b、24a、24b與矽基 可動體基板）1形成爲同電位的狀態下，進行矽基板 動體基板）1與上部固定板（固定側基板）2 a的陽極 。因此，無須使用壓擠構造，即可進行陽極接合。結 可抑制在接合部分形成氧化膜而發生導通不良的情形 外可抑制在壓擠部分作用應力而對裝置特性造成影響 形。 如上所示，藉由本實施形態，可得可抑制對裝置 造成影響的加速度感測器（靜電電容式裝置）S。 此外，使用鋁膜（第1及第2金屬膜）25、26， 部固定板（固定側基板）2a與矽基板（可動體基板） 間設置電位差，另—方面，使貫穿砍23a、23b、24a、 與砍基板（可動體基板）1成爲同電位’因此可更加 進行電壓的施加或同電位化。此外，可利用濺鍍或蒸 等適於ME MS裝置的方法來輕易地進行成膜或圖案化 此時，若使用鋁作爲第1及第2金屬膜的材料， 各個 墊， 出至 定板 置電 板（ (可 接合 果， ，此 的情 特性 在上 1之 24b 確實 鍍法 〇 在材 -17- 201234013 料上由於較爲廉價，故可達成成本降低。如上所示之藉由 鋁膜25、26所致的圖案化係連同濕式蝕刻及乾式蝕刻一 起確立技術，因此亦有易於加工的優點。尤其，在形成數 μηι程度的微細MEMS裝置圖案時，若使用鋁則更爲有效 〇 此外，藉由本實施形態，在鋁膜26，亦即上部固定板 2a的表面中的貫穿矽23a、23b、24a、24b的外側露出面 以外的部位，以與作爲第1金屬膜的鋁膜25分離的方式 所成膜的第2金屬膜、與貫穿矽23a、23b、24a、24b的 最短距離a形成爲大於上部固定板2a的厚度b。 因此，在對上部固定板2a的鋁膜26施加電壓時，可 抑制在貫穿矽23a、23b、24a、24b的貫穿部發生接合反 應的情形，而可積極地在上部固定板2a與矽基板1的接 合部發生接合反應。亦即，可使矽基板1與上部固定板2a 所欲接合的部位中的接合反應更加確實發生。 此外，藉由本實施形態，以晶圓級進行矽基板（可動 體基板）1與上部固定板（固定側基板）2a的陽極接合， 遍及晶圓W全面將成膜在作爲固定電極20a、20b、21a、 21b的貫穿矽23a、23b、24a、24b的外側露出面的鋁膜（ 第1金屬膜）25彼此藉由金屬配線（金屬配線27及金屬 配線w2 )而相互導通。如上所示，將複數加速度感測器S 的陽極接合在晶圓上總括進行，藉此可使可抑制對裝置特 性造成影響的情形的加速度感測器S的生產性更進一步提 升。S -16- 201234013 Utilization. Next, after performing anodic bonding at the wafer level, the complex acceleration sensor S is fabricated by dividing into wafers. Here, the potentials of the fixed electrodes 20a and 20b and the fixed electrodes 21a and 21b are externally used by using the residual aluminum film 25 as wire bonding. As described above, in the present embodiment, a difference is provided between the upper solid (fixed side substrate) 2a and the ruthenium substrate (movable substrate) 1, and the through ridges 23a, 23b, 24a, and 24b are formed. When the ruthenium-based movable substrate (1) is formed at the same potential, the anode of the ruthenium substrate movable substrate 1 and the upper fixed plate (fixed-side substrate) 2a is formed. Therefore, anodic bonding can be performed without using a squeeze structure. The junction can suppress the formation of an oxide film in the joint portion and cause a conduction failure. In addition, it is possible to suppress the stress on the pressed portion and affect the device characteristics. As described above, according to the present embodiment, it is possible to obtain an acceleration sensor (capacitive device) S which can suppress the influence of the device. Further, an aluminum film (first and second metal films) 25 and 26 are used, and a potential difference is provided between the fixed portion (fixed side substrate) 2a and the ruthenium substrate (movable substrate), and the cuts 23a and 23b are further cut. 24a and the cut substrate (movable body substrate) 1 have the same potential', so that voltage application or the same potential can be further performed. Further, it is possible to easily form a film or pattern by a method suitable for an ME MS device such as sputtering or steaming. In this case, if aluminum is used as the material of the first and second metal films, each pad is placed on a fixed plate. Electric board ((It can be joined with fruit, the characteristics of this is in the first 1 of 24b, the plating method is actually on the material -17-201234013. Because it is cheaper, the cost can be reduced. As shown above, the aluminum film 25 The patterning method caused by 26, together with the wet etching and dry etching, establishes the technique, and therefore has the advantage of being easy to process. In particular, when forming a micro MEMS device pattern of several μm, it is more effective if aluminum is used. According to the present embodiment, the aluminum film 26, that is, the portion other than the outer exposed surface of the through-holes 23a, 23b, 24a, and 24b in the surface of the upper fixing plate 2a is separated from the aluminum film 25 as the first metal film. The second metal film formed by the method and the shortest distance a between the through-holes 23a, 23b, 24a, and 24b are formed to be larger than the thickness b of the upper fixing plate 2a. Therefore, a voltage is applied to the aluminum film 26 of the upper fixing plate 2a. Can suppress the intrinsic When the joining reaction occurs in the penetrating portions of the crucibles 23a, 23b, 24a, and 24b, the joining reaction can be actively performed at the joint portion of the upper fixing plate 2a and the crucible substrate 1. That is, the crucible substrate 1 and the upper fixing plate 2a can be made. Further, in the present embodiment, the anodic bonding of the ruthenium substrate (the movable substrate) 1 and the upper fixing plate (the fixed substrate) 2a is performed at the wafer level, and the wafer is spread over the wafer. The aluminum film (first metal film) 25 which is formed on the outer surface of the through-holes 23a, 23b, 24a, and 24b which are the fixed electrodes 20a, 20b, 21a, and 21b is formed by metal wiring (metal wiring 27 and The metal wires w2) are electrically connected to each other. As shown above, the anodes of the plurality of acceleration sensors S are collectively bonded to the wafer, whereby the production of the acceleration sensor S capable of suppressing the influence on the device characteristics can be suppressed. Sexuality is further improved.

S -18- 201234013 此外’本實施形態之加速度感測器S係具備有鋁膜（ 在將矽基板1與上部固定板2a進行陽極接合時，爲了將 貫穿矽23a、23b、24a、24b與矽基板1進行同電位化而 成膜在貫穿矽23a、23b、24a、24b之外側露出面的金屬 膜）25。亦即，可將供貫穿矽23a、23b、24a、24b與矽 基板（可動體基板）1的同電位化之用所成膜的鋁膜2 5作 爲打線接合焊墊加以活用。 結果’變得不需要爲了進行打線接合而再次將金屬膜 等進行成膜，可省略圖案化或蝕刻工程，而可達成簡化工 程。 若使用鋁作爲該金屬膜的材料，可利用濺鏟或蒸鍍法 等適於MEMS裝置的方法輕易地進行成膜或圖案化，在材 料上亦較爲廉價，故可達成降低成本。 以上說明本發明之較適實施形態，惟本發明並非限定 於上述實施形態1可爲各種變形。 例如，在上述實施形態中係例示檢測X方向與Z方向 之2方向的加速度的加速度感測器，但是亦可形成爲使重 錘部的1個在XY平面內旋轉90度作配置，檢測包括Y 方向的3方向的加速度的加速度感測器。 此外，在上述實施形態中，係例示加速度感測器作爲 靜電電容式裝置，但是並非侷限於此，即使爲其他靜電電 容式裝置，亦可適用本發明。 此外，在上述實施形態中係例示透過貫穿孔而使接地 電極露出於外部來進行配線’藉此使接地電極的電位（可 -19- 201234013 動電極的電位）取出至外部者，但是亦可在貫穿孔形成貫 穿矽，而由該貫穿矽將接地電極的電位（可動電極的電位 )取出至外部。如此一來，可輕易製造玻璃埋入矽基板。 此外，可動電極或固定電極等細部的規格（形狀、大 小、配置等）亦可適當變更。 (產業上可利用性） 藉由本發明，可得可抑制對裝置特性造成影響的靜電 電容式裝置之製造方法。 【圖式簡單說明】 第1圖係顯示本發明之一實施形態之靜電電容式裝置 的分解斜視圖。 第2圖係顯示第1圖所示之靜電電容式裝置的可動體 基板，（a)係可動體基板的平面圖，（b)係可動體基板的底 面圖。 第3圖係第 1圖所示之靜電電容式裝置的模式剖面圖 〇 第4圖係顯示第1圖所示之靜電電容式裝置之製造途 中的晶圓的平面圖。 第5圖係第4圖中I部的放大圖。 第6圖係第5圖中II部的放大圖。 【主要元件符號說明】S -18-201234013 In addition, the acceleration sensor S of the present embodiment is provided with an aluminum film (in order to anneal the 矽 substrate 1 and the upper fixing plate 2a, in order to pass through the cymbals 23a, 23b, 24a, 24b and 矽The substrate 1 is subjected to the same potential to form a film 25 on which the film is exposed on the outer side of the ridges 23a, 23b, 24a, and 24b. In other words, the aluminum film 25 formed by the same potential of the through-holes 23a, 23b, 24a, and 24b and the ruthenium substrate (movable substrate) 1 can be used as a wire bonding pad. As a result, it is not necessary to form a metal film or the like again for wire bonding, and the patterning or etching process can be omitted, and a simplified process can be achieved. When aluminum is used as the material of the metal film, it can be easily formed into a film or patterned by a method suitable for a MEMS device such as a sputtering blade or a vapor deposition method, and the material is also inexpensive, so that cost reduction can be achieved. The preferred embodiments of the present invention have been described above, but the present invention is not limited to the above-described first embodiment and can be various modifications. For example, in the above-described embodiment, the acceleration sensor that detects the acceleration in the two directions of the X direction and the Z direction is exemplified, but one of the weight portions may be rotated by 90 degrees in the XY plane, and the detection may include Acceleration sensor for acceleration in 3 directions in the Y direction. Further, in the above embodiment, the acceleration sensor is exemplified as the capacitance type device. However, the present invention is not limited thereto, and the present invention can be applied to other electrostatic capacitance type devices. In addition, in the above-described embodiment, the grounding electrode is exposed to the outside through the through hole, and the wiring is performed. Therefore, the potential of the ground electrode (the potential of the movable electrode of -19-201234013) can be taken out to the outside. A through hole is formed in the through hole, and the potential of the ground electrode (potential of the movable electrode) is taken out to the outside by the through hole. In this way, the glass can be easily fabricated into the germanium substrate. Further, the specifications (shape, size, arrangement, and the like) of the details such as the movable electrode or the fixed electrode can be appropriately changed. (Industrial Applicability) According to the present invention, a method of manufacturing a capacitance type device which can suppress the influence of device characteristics can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an exploded perspective view showing a capacitive device according to an embodiment of the present invention. Fig. 2 is a view showing a movable substrate of the capacitive device shown in Fig. 1, (a) a plan view of the movable substrate, and (b) a bottom view of the movable substrate. Fig. 3 is a schematic cross-sectional view showing the capacitive device shown in Fig. 1. Fig. 4 is a plan view showing the wafer during the manufacture of the capacitive device shown in Fig. 1. Fig. 5 is an enlarged view of a portion I in Fig. 4. Fig. 6 is an enlarged view of a portion II in Fig. 5. [Main component symbol description]

S -20- 201234013 1 :矽基板 1 a :埋入絕緣層 1 b :矽活性層 1 c :支持基板 2a :上部固定板 2b :下部固定板 3 :框架 3 a、3 b :矩形框 4、5 :可動電極 6a ' 6b ' 7a ' 7b ： # 1 0 :接地電極 11、 32a、 32b:凹部 20a ' 20b、 21a、 21b：固定電極 22a :貫穿孔 23a、23b、24a、24b ：貫穿矽 25 、 26 :鋁膜 2 7、w 1、w 2、w 3 :金屬配線 28、29 :附著防止膜 41、5 1 :突起部 a :最短距離 b :厚度S -20- 201234013 1 : 矽 substrate 1 a : buried insulating layer 1 b : 矽 active layer 1 c : support substrate 2a : upper fixed plate 2 b : lower fixed plate 3 : frame 3 a, 3 b : rectangular frame 4 5: movable electrode 6a ' 6b ' 7a ' 7b : # 1 0 : ground electrode 11, 32a, 32b: recess 20a ' 20b, 21a, 21b: fixed electrode 22a: through hole 23a, 23b, 24a, 24b: through 矽 25 26: aluminum film 2 7, w 1 , w 2, w 3 : metal wiring 28, 29: adhesion preventing film 41, 5 1 : protrusion a: shortest distance b: thickness

Cl、 C2、 C3、 C4:靜電電容 d :間隙 k :箭號 -21 - 201234013 Μ :交界線 S :加速度感測器Cl, C2, C3, C4: electrostatic capacitance d: clearance k: arrow -21 - 201234013 Μ : boundary line S : acceleration sensor

Sa :第1加速度感測器單體Sa : 1st acceleration sensor unit

Sb :第2加速度感測器單體 W :晶圓 W a :接地電極Sb: 2nd acceleration sensor unit W: Wafer W a : Ground electrode

Wb:電壓施加電極Wb: voltage application electrode

S -22-S -22-

Claims (1)

201234013 七、申請專利範圍： 1. 一種靜電電容式裝置之製造方法，其係具備有：形 成有可動電極的可動體基板；及形成有與前述可動電極相 對向的固定電極’且被陽極接合在前述可動體基板的固定 側基板之靜電電容式裝置之製造方法，其特徵爲： 將以露出於前述固定側基板之兩面的方式使矽貫穿所 形成的貫穿矽形成爲前述固定電極，並且以矽形成前述可 動體基板之至少被陽極接合在前述固定側基板的部位， 在前述貫穿矽的外側露出面形成第1金屬膜，並且在 前述固定側基板的表面中的前述貫穿矽的外側露出面以外 的部位，以與前述第1金屬膜分離的方式形成第2金屬膜 » 在將前述可動體基板與前述固定側基板進行陽極接合 時，使用前述第1金屬膜及第2金屬膜，在前述固定側基 板與前述可動體基板之間設置電位差，另一方面，使前述 貫穿矽與前述可動體基板成爲同電位。 2. 如申請專利範圍第1項之靜電電容式裝置之製造方 法’其中，使前述第2金屬膜與前述貫穿矽的最短距離大 於前述固定側基板的厚度。 3 .如申請專利範圍第1項或第2項之靜電電容式裝置 之製造方法’其中，前述第1金屬膜及第2金屬膜的材料 爲鋁。 4 ·如申請專利範圍第1項或第2項之靜電電容式裝置 之製造方法，其中，前述可動體基板與前述固定側基板的 -23- 201234013 的 矽 穿 貫 之 極 電 定 固 述 前 爲 作 ， 在 行膜 進成 級而 圓面 晶全 以圓 係晶 合及 接遍 極 陽 外側露出面的第1金屬膜彼此係藉由金屬配線而相互導通 〇 5.如申請專利範圍第3項之靜電電容式裝置之製造方 法，其中，前述可動體基板與前述固定側基板的陽極接合 係以晶圓級進行，遍及晶圓全面而成膜在作爲前述固定電極的貫穿矽的 外側露出面的第1金屬膜彼此係藉由金屬配線而相互導通 S -24-201234013 VII. Patent application scope: 1. A method for manufacturing a capacitance type device comprising: a movable body substrate on which a movable electrode is formed; and a fixed electrode formed to face the movable electrode and anodically bonded thereto In the method of manufacturing a capacitive device according to the fixed-side substrate of the movable substrate, the through-turning formed by the penetration of the ruthenium on the both sides of the fixed-side substrate is formed as the fixed electrode, and Forming at least a portion of the movable body substrate that is anodically bonded to the fixed side substrate, forming a first metal film on an outer exposed surface of the through hole, and forming an outer surface of the through side of the fixed side substrate The second metal film is formed to be separated from the first metal film. The anode is bonded to the fixed substrate, and the first metal film and the second metal film are used for the fixing. A potential difference is provided between the side substrate and the movable body substrate, and on the other hand, the through hole is The movable substrate become the same potential. 2. The method of manufacturing a capacitive device according to the first aspect of the invention, wherein the shortest distance between the second metal film and the through hole is larger than the thickness of the fixed side substrate. 3. The method of manufacturing a capacitive device according to the first or second aspect of the invention, wherein the material of the first metal film and the second metal film is aluminum. 4. The method of manufacturing a capacitance type device according to the first or second aspect of the invention, wherein the movable body substrate and the fixed side substrate are -23-201234013 The first metal film in which the round film is crystallized and the outer surface of the outer surface of the polar surface is connected to each other by the metal film, and the metal film is electrically connected to each other by the metal wiring. 5. The third aspect of the patent application is as follows. In the method of manufacturing a capacitive device, the anodic bonding of the movable substrate and the fixed substrate is performed at a wafer level, and the entire surface of the wafer is formed over the entire surface of the through hole of the fixed electrode. 1 metal films are electrically connected to each other by metal wiring. S-24-
TW101102866A 2011-01-27 2012-01-30 Method for producing electrostatic capacitance device TW201234013A (en)

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