201223341 六、發明說明： 【發明所屬之技術領域】 本發明涉及電處理裝置領域，特财及_種電感耗合型 電漿處理裝置。 【先前技術】 電漿處理裝置廣泛應用於積體電路的製造工藝中，如沉 積、刻姓等。其中’電感耗合型電製（ICP,InduetivdyC〇upled201223341 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to the field of electric processing devices, special financial materials, and electromagnetic interference processing devices. [Prior Art] The plasma processing apparatus is widely used in the manufacturing process of an integrated circuit, such as deposition, engraving, and the like. Among them, 'inductively consumable type electric system (ICP, InduetivdyC〇upled
Plasma)裝置是電漿處理裝置中的主流技術之一，其原理主要 是使用射頻功率驅動電感耦合線圈產生較強的高頻交變電磁 場，使得低壓的反應氣體被電離產生電漿。電漿中含有大量的 電子、離子、激發_原子、分子和自由基等活性粒子，上述 活性粒子可以和待處理晶圓的表面發生多種物理和化學反 應，使得晶圓表面的形貌發生改變，即完成刻蝕過程；另外， 上述活性離子比常規的氣態反應物具有更高的活性，可以促進 反應氣體間的化學反應，即可以實現電漿增強型化學氣相沉積 (PECVD)。 第1圖為現有技術的一種電感轉合電漿處理裝置的剖面妹 構示意圖，主要包括.·反應腔10、晶圓載台丨丨、電感耦合線圈 12和電源13。其中’晶圓載台11位於所述反應腔中，用於承 載和固定晶圓14 ;電感耦合線圈12設置於反應腔1〇的頂蓋上 方；電源13用於向所述電感耦合線圈12供電，向其提供射頻能 量。在工藝過程中，進入反應腔10的反應氣體被上方的電感耗 201223341 合線圈12產生的高能電磁場電離，形成電聚，如果是刻触工 藝，科將所述晶輯台U連接至—控制魏能量的低頻電 源，以驅動所述電聚對晶圓14進行刻餘。在這一過程中，使反 應氣體電離形成電聚的能量來自於電感輕合線圈12，因此電感 搞合線圈I2產生的磁場的分佈情況會影響賴的分佈。 所述電感轉合線圈I2-般為平面螺旋結構，其中心部分所 激發的電磁場贿㈣，㈣緣部分駿發的電磁場強度較 弱，因此使得反賴_巾心部細妓紐較高，邊緣部分 的電漿密度較低。 為了改善《密度分佈的均祕，财技術還公開了一種 電漿處理裝置，如第2圖所示，其中的電感輕合線圈由兩個相 互絕緣_組成，包括：位於中心部分的内層線圈15和排 布於内層_卜的週邊咖16，所述綠_ 15和週邊線圈 綱’電源17和麵__層線2 和週邊線圈16分解_行供電，啼現射心部分和邊緣 ‘的電磁場強度_立調節，改善賴分佈的均勻性。作 =上述結射，内層、_ 15和週邊、_ 16之間存在間隔y =產生的電峨度並侧，導物嶋分伟並不均 【發明内容】 電漿Z:::是提供’_合賴處理裂置’提高 4 201223341 為解決上述刺，本發明提供了—觀祕合型電莱處理 裝置’包括：反應腔、電源和設所述反應酬蓋上方的電 感搞合線圈，所述電感齡_包括相疊的至少兩個線圈，所 述電源對所述電感耦合線圈巾的各_分別供電，其中第一線 圈在反應腔内形成的電磁場中間部分大於邊緣部分，第二線圈 在反應腔内形成的電磁場邊緣部分大於中間部分。 可選的，所述第-線圈中心部分的線圈到反應腔的距離小 於邊緣部分到反應腔的距離，所述第二線圈中心部分的線圈到 反應腔的距離大於邊緣部分到反應腔的距離。 可選的，所述第一線圈的繞線密度中心部分大於邊緣部 分，所述第二線圈的繞線密度中心部分小於邊緣部分。 可選的，所述第一線圈靠近所述反應腔，所述第二線圈疊 在所述第一線圈外。 可選的，所述第二線圈靠近所述反應腔，所述第一線圈疊 在所述第二線圈外。 可選的’所述線圈為導線，各線圈通過設置在相鄰線圈之 間的絕緣介質實現絕緣。 可選的’所述線圈包括導線和包覆在所述導線外的絕緣外 皮。 可選的’所述電源提供至所述電感耦合線圈中的相鄰線圈 的電流方向相反。 與現有技術相比，本技術具有以下優點： 5 201223341 本技術方案的電雜合型電漿處理裝置_的電感轉合線 圈包括相疊的多個線圈，各線圈之間相互絕緣，其中第一線圏 在反應腔内形成的電磁場中間部分大於邊緣部分，第二線圈在 反應腔内形成的電磁場邊料分大於中間部分，通過調整對各 線圈的供電分別調整反應腔内中間部分和邊緣部分的電磁 場’利於改善電漿的分佈密度。 另外，本技術方案中的電感輕合線圈中，所述第一線圈的 繞線密度中，c部分大於邊緣部分，所述第二線圈的繞線密度中 心部分小於邊緣部分，進-步使得第—線圈在反應腔内形成的 電磁場中間部分大於邊緣部分，第二線圈在反應腔内形成的電 磁場邊緣部分大种間料，·改善鄕的分佈密度。 【實施方式】 為使本發明的上述目的、特徵和優點能夠更為明顯易懂， 下面結合關和實施順本發明的具體實施方式做詳細的說 明。 在以下描述中闌述了具體細節以便於充分理解本發明。但 是本發明簡衫種不同於在此料的其打絲實施，本領 域技術人貝可以在*違背本發_涵的情況下做類似推廣。因 此本發明不受下面公開的具體實施方式的限制。 、 現有技術中採用設置於同-平面内的兩個或多個線圈構 成電感麵合線圈，對不同的線圈分別進行供電，但是，由於各 線圈產生的磁場強度的分佈是並不連續的，影響了電装分佈的 6 201223341 均勻性。 本技術方案中的電感耗合線圈_相疊的多個線圈構成 電感搞合細，對不_軸分騎行供電，其中第—線圈在 反應腔内形成的電磁場中間部分大於邊緣部分，第二線圈在反 應腔内形成的電磁場邊緣部分大於中間部分，通過分別調整第 -線圈和第二線圈的供電分別調整反應腔中間部分和邊緣部 分的電磁場，繼改善反應腔魄漿分佈的均句性。 第一實施例 如第3圖所示’第一實施例的電感轉合型電聚處理裝置主 要包括：反應腔20 ’反應腔20包括頂蓋2〇a、底部和側壁2此， 頂蓋20a的材料為絕緣材料，如石英等，所述底部和側壁观 的材料為導電材料，如金屬!s等；設置於反應腔2G的頂蓋 上方的第-軸22、疊放設置於所述第—細22之上的第二 線圈23 ;給第一線圈22供電的第一電源24以及給第二線圈 23供電的第二電源25，另外，反應腔2〇中還設置有晶圓載台 a，用於承載和固定晶圓，晶圓載台21與第一線圈22和第二 線圈23覆蓋的範圍正對，即晶圓載台U為工藝操作的覆蓋範 圍，所述工藝操作可以是電漿乾法蝕刻、電漿增強型化學氣相 沉積等。 其中，第一線圈22和第二線圈23共同構成了本實施例中 的電感耦合線圈，第一線圈22在反應腔20内形成的電磁場中 間部分大於邊緣部分，第二線圈23在反應腔2〇内形成的電磁 201223341 %邊緣部分大於巾間部分。本實施射，所述第-線圈22中 〜部分的線圈到反應腔2〇的距離小於邊緣部分到反應腔2〇的 距離，第二線圈23中心部分的線圈到反應腔20的距離大於邊 緣部分到反應腔2G的距離。具體的，所述第—線圈22和第二 線圈23都螺旋纏繞成圓頂狀（d〇me)，第一線圈22的頂部與 第二線圈23的頂部相對。另外’所述第一線圈22和第二線圈 2 3可以具有均勻的繞線密度，即其中相鄰導線之間都具有 相同的距離。所述第—線圈22和第二線圈23之間通過絕緣介 質來實現絕緣’如在相鄰線圈中填充絕緣介質材料，或是將所 述第線目22和第二線圈23分別設置於絕緣介質材料形成的 線圈框架中，以實現第一線圈22和第二線圈23之間的相互絕 緣，以及同一線圈中相鄰兩匝導線之間的相互絕緣。或者，在 本技術方案的其他實糊巾，第—賴22和第二線圈23中所 使用的導線外部包覆有絕緣外皮，以此來實現第-線圈22和 第二線圈23之間的相互絕緣，以及同—線圈中相鄰兩轉線 之間的相互絕緣。 第-電源24和第二電源25輸出的射頻功率可以獨立調 郎，它們可以為兩個相互獨立的電源賴，也可以為同一電源 設備中__立的供f模組，分別向職第—_ 22和第二 線圈23進行供電。 由於第一線圈22為倒置的圓頂狀，其中心部分的線圈到 反應腔的距離小於邊緣部分到反應腔的距離，因此，第一線圈 8 201223341 22中心部分的線圈激發產生的電磁場在反應腔㈣的強度較 強，而第-線圈22巾邊緣部分的線圈距離反應腔2〇的頂蓋較 遠，其激發產生的電磁場在反應腔2〇内的強度較弱，因此通 過第-電源24對提供至第-線圈22中的射頻功率進行調節， 其影響的範圍主要是反應腔20的中心部分。類似的，第二線 圈23為正放的圓頂狀’可以通過第二電源25對提供至第二線 圈23中的射頻功率進行調節’由於第二線圈23邊緣部分的線 圈離反應腔20更近所以其產生的電磁場呈現邊料分強於中 心部分。 在實際使用巾，可以通過第-線圈22和第二線圈23分別 調節反應腔20中心部分和邊緣部分的電磁場強度，由於第一 線圈22和第二線圈23都覆蓋了整個反應腔2〇的工藝操作範 圍’因此其電磁場強度的分佈具有連續性，可以改善電浆分佈 的均勻性。 另外，作為一個優選的實施例，第一電源24提供至第一 線圈22中的電流方向與第二電源25提供至第二線圈23.中的 電流方向相反’使得第一線圈22和第二線圈23激發產生的電 磁場方向相反，降低了兩個線圈之間的相互影響，使得調節過 程的可控性更高，能夠進一步改善電漿分佈的均勻性。 第二實施例 如第4圖所示，第二實施例的電感耦合型電漿處理裝置主 要包括：反應腔30，反應腔30包括頂蓋3〇a、底部和側壁3〇b， 201223341 玷1、…的材料為絕緣材料’如石英等，所述底部和側壁30b 的材料為導雷t a 如金屬鋁等；設置於反應腔3〇的頂蓋3〇a 上方的第二線圈32、疊放設置於第二線圈32之上的第一缘圈 =_二'_32供電的第二電源別以及給第—線圈3玲 的第電源35，另外，反應腔3〇中還設置有晶圓載台3卜 用於承載和固定晶圓。 其中’第-線圈33和第二線圈32共同構成了本實施例中 的電感耗。線圈，與第一實施例類似的，它們都螺旋纏繞成圓 頂狀’第-線圈33的頂部與第二線圈32的底部相對，第一線 2 33的繞線密度中心部分大於邊緣部分，第二、_ 32的繞線 密度中〜卩分小於邊緣部分。與第—實關類似的，第一線圈 33和第—軸％之間可輯過絕緣介質實現被的絕緣或是 使用外。卩包覆有絕緣外皮的導線來實現相互絕緣。 〜第-電源35和第二電源34輸出的射頻功率可以獨立調 節用於分別向第一線圈33和第二線圏％進行供電。 與第-實施例中的機理類似，本實施例中，第一線圈％ 為正放的圓雛，可以通過第一電源35對提供至第一線圈％ 中的射頻功率進行調節，由於其中心部分的線圈距離反應腔如 的距離小於邊緣部分的線圈距離反應腔的距離，而且其中心部 分的繞線密度較大，因此其影響的細主要是反應腔％財 刀。苐一線圈32為倒置的圓頂狀，可以通過第二電源^ 對提供至第二線圈32中的射頻功率進行調節，其影響的範圍 201223341 主要疋反應腔30的邊緣部分。 作為-個優選的實施例，第—電源35提供至第一線圈33 中的電流方向與第二電源34提供至第二線圈32中的電流方向 係為相反，降低了兩個線圈之間的相互影響，使得調節過程的 可控性更高，能夠進一步改善電漿分佈的均勻性。 第三實施例 如第5圖所示’第三實施例的電感耗合型電|處理裝置主 要包括：反應腔40，反應腔40包括頂蓋40a、底部和側壁4〇b， 頂蓋40a的材料為絕緣材料，如石英等，所述底部和側壁4〇b 的材料為導電材料’如金屬紹等；設置於所述反應腔4〇的頂 蓋40a上方的第一線圈42和疊放設置於第一線圈幻之上的第 二線圈43，另外，反應腔4〇中還設置有晶圓載台41，用於承 載和固定晶圓。此外，還包括電源（圖中未示出），用於分別 向第一線圈42和第二線圈43進行供電。 其中，第一線圈42和第二線圈43共同構成了本實施例中 的電感搞合線圈，它們都螺旋纏繞成平面狀。第一線圈42的 繞線密度中心部分大於邊緣部分，即從反應腔⑽的頂蓋4〇a 中心部分至邊緣部分，第42巾相鄰兩轉線之間的距 離逐漸增大’因此，第—_ 42激發產生的電磁場在中心部 分的強度較強，可明過第—細42娜反應腔4()的中心部 分的電漿紐。第二軸43至邊緣喊軸度漸密， 即從反應腔40的頂蓋4Ga的中心部分至邊緣部分，第二線圈 201223341 43中相鄰兩匝導線之間的距離逐漸減小，因此，第二線圈43 激發產生的電磁場在邊緣部分的強度較強，可以通過第二線圈 43調節邊緣部分的電漿密度’進而實現整個反應腔4〇内電製 的均勻分佈。 作為一個優選的實施例，第一線圈42和第二線圈43中的 電流方向相反，降低了兩個線圈之間的相互影響，使得調節過 程的可控性更高，能夠進一步改善電漿分佈的均勻性。 當然，在其他實施方式中，第一線圈42和第二線圈43 的疊放次序也可以互換，即第二線圈43靠近所述頂蓋4〇a，所 述第一線圈42疊在所述第二線圈43外。 第四實施例 如第6圖所示’第四實施例的電感搞合型電製處理裝置主 要包括.反應腔50，反應腔5〇包括頂蓋5〇a、底部和側壁5〇b， 頂蓋50a的材料為絕緣材料，如石英等’所述底部和側壁娜 的材料為導電材料，如金屬料；設置於反應腔5G頂蓋50a 上方的第―線圈52、疊放設置於所述第-線圈52之上的第二 ^圈53、疊放設置於第二線圈53之上的第三線圈Μ以及疊放 μ ;第、線圈54之上的第四線圈55,另外，反應腔5〇中還 (^有阳圓載台51 ’用於承載和固定晶圓。此外’還包括電源 未下出），用於分別向第一線圈52、第二線圈53、第= 線圈:4和第四線圈55進行供電。 第- 線圈52、第二線圈53、第三線圈54和第四線圈55 201223341 共同構成了本實施例中的電感耦合線圈，它們都螺旋纏繞成平 面狀，且相鄰線圈之間的繞線密度的變化趨勢相反，其中，第 一線圈52的繞線密度中心部分大於邊緣部分，第二線圈幻的 繞線密度中心部分小於邊緣部分，第三線圈54的繞線密度中 心部分大於邊緣部分，第四線圈55的繞線密度中心部分小於 邊緣部分。在實際制巾，乡個線睛結構賴提供更靈活的 調節方法，可以通過對提供至各線圈的射頻能量的調整，實現 整個反應腔内電漿的均勻分佈。 作為一個優選的實施例，相鄰線圈之間的電流方向相反， 具體的，第二線圈53與第一線圈52的電流方向相反，第三線 圈54與第二線圈53的電流方向相反，第四線圈55與第三線 圈54的電流方向相反。 當然，在其他實施方式中，電感搞合線圈中包括的線圈還 可以為其他數量，如5個、6個、8個等，且相鄰兩個線圈之 間的繞線密度的變化趨勢相反。 本發明雖然已以較佳實施例公開如上，但其並不是用來限 定本發明’任何本領域技術人員在不脫離本發明的精神和範圍 内’都可以卿上述鮮的方法和技細容縣㈣技術方案 做出可能_動和修改，因此，凡是未_本㈣技術方案的 内容，依據本發明的技術實質對以上實施例所作的任何簡單修 改、等同變化及修飾’均屬於本發賴術方案的保護 【圖式簡單·】 13 201223341 第1圖是現有技術的一種電感耦合型電漿處理裝置的剖面結 構示意圖； 第2圖是現有技術的一種電感耦合線圈的俯視結構示意圖； 第3圖是本發明第一實施例的電感耦合型電漿處理裝置的剖 面結構示意圖； 第4圖是本發明第二實施例的電感耦合型電漿處理裝置的剖 面結構示意圖； 第5圖是本發明第三實施例的電感耦合型電漿處理裝置的剖 面結構示意圖；及The Plasma device is one of the mainstream technologies in the plasma processing device. The principle is mainly to use the RF power to drive the inductive coupling coil to generate a strong high-frequency alternating electromagnetic field, so that the low-pressure reaction gas is ionized to generate plasma. The plasma contains a large amount of active particles such as electrons, ions, excitation atoms, molecules and radicals. The above-mentioned active particles can undergo various physical and chemical reactions with the surface of the wafer to be processed, so that the surface morphology of the wafer changes. That is, the etching process is completed; in addition, the above-mentioned active ions have higher activity than the conventional gaseous reactants, and can promote the chemical reaction between the reaction gases, that is, plasma enhanced chemical vapor deposition (PECVD) can be realized. 1 is a schematic cross-sectional view of a prior art inductively-transferred plasma processing apparatus, which mainly includes a reaction chamber 10, a wafer carrier, an inductive coupling coil 12, and a power source 13. Wherein the wafer carrier 11 is located in the reaction chamber for carrying and fixing the wafer 14; the inductive coupling coil 12 is disposed above the top cover of the reaction chamber 1; the power source 13 is used to supply power to the inductive coupling coil 12, Provide RF energy to it. During the process, the reaction gas entering the reaction chamber 10 is ionized by the high-energy electromagnetic field generated by the upper inductor consumption 201223341 and the coil 12 to form electropolymerization. If it is a process of incision, the section connects the crystal stage U to the control Wei. A low frequency power source of energy is used to drive the electropolymer to the wafer 14 for engraving. In this process, the energy for ionizing the reaction gas to form electropolymerization comes from the inductive light coupling coil 12, so that the distribution of the magnetic field generated by the inductance coil I2 affects the distribution of the lag. The inductor-conducting coil I2- is generally a planar spiral structure, and the electromagnetic field excited by the central portion thereof is bribed (4), and the electromagnetic field strength of the (4) edge portion of the hair is weak, so that the reliance _ towel core is high and the edge is high. Part of the plasma density is low. In order to improve the uniformity of the density distribution, the financial technology also discloses a plasma processing apparatus, as shown in Fig. 2, wherein the inductive light coupling coil is composed of two mutually insulated _, including: the inner layer coil 15 located at the center portion And the surrounding coffee beans 16 arranged in the inner layer, the green _ 15 and the peripheral coils 'power source 17 and the surface __ layer line 2 and the peripheral coil 16 are decomposed _ line power supply, and the electromagnetic field of the inner core portion and the edge portion Strength _ vertical adjustment to improve the uniformity of the distribution. For the above-mentioned junction, there is a gap between the inner layer, _ 15 and the periphery, _ 16 , and the side of the electricity 并 is generated, and the side of the electrode is not uniform. [Summary of the invention] Plasma Z::: is provided _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The inductor age _ includes at least two coils that are stacked, and the power source supplies power to each of the inductive coupling coils, wherein an intermediate portion of the first magnetic field formed in the reaction chamber is larger than an edge portion, and the second coil is The edge portion of the electromagnetic field formed in the reaction chamber is larger than the intermediate portion. Optionally, the distance from the coil of the central portion of the first coil to the reaction chamber is less than the distance from the edge portion to the reaction chamber, and the distance from the coil of the central portion of the second coil to the reaction chamber is greater than the distance from the edge portion to the reaction chamber. Optionally, the center portion of the winding density of the first coil is larger than the edge portion, and the center portion of the winding density of the second coil is smaller than the edge portion. Optionally, the first coil is adjacent to the reaction chamber, and the second coil is stacked outside the first coil. Optionally, the second coil is adjacent to the reaction chamber, and the first coil is stacked outside the second coil. The optional 'the coil is a wire, and each coil is insulated by an insulating medium disposed between adjacent coils. The optional 'the coil includes a wire and an insulating sheath that is wrapped around the wire. An optional 'the power supply is provided to the adjacent ones of the inductively coupled coils in opposite current directions. Compared with the prior art, the present technology has the following advantages: 5 201223341 The electrical hybrid plasma processing device of the present invention has an inductor-conducting coil including a plurality of coils stacked one on another, and the coils are insulated from each other, first The middle portion of the electromagnetic field formed in the reaction chamber is larger than the edge portion, and the electromagnetic field formed by the second coil in the reaction chamber is larger than the middle portion, and the middle portion and the edge portion of the reaction chamber are respectively adjusted by adjusting the power supply to each coil. The electromagnetic field 'is beneficial to improve the distribution density of the plasma. In addition, in the inductive light-coupling coil of the present technical solution, in the winding density of the first coil, the c portion is larger than the edge portion, and the center portion of the winding density of the second coil is smaller than the edge portion, and the step further - The intermediate portion of the electromagnetic field formed by the coil in the reaction chamber is larger than the edge portion, and the second coil has a large amount of material in the edge portion of the electromagnetic field formed in the reaction chamber, and the distribution density of the crucible is improved. The above described objects, features, and advantages of the present invention will be more apparent from the aspects of the invention. Specific details are recited in the following description in order to provide a thorough understanding of the invention. However, the present invention is different from the spinning of the material in the present invention, and the technical person in the field can make similar promotion in the case of the violation of the present invention. Therefore, the invention is not limited by the specific embodiments disclosed below. In the prior art, two or more coils disposed in the same plane are used to form an inductive surface-coupling coil, and different coils are separately supplied with power. However, since the distribution of the magnetic field strength generated by each coil is not continuous, the influence is affected. The electrical distribution of the 6 201223341 uniformity. In the technical solution, the inductors of the inductors and the plurality of coils are arranged to form an inductance, and the power is supplied to the non-axis, wherein the middle portion of the electromagnetic field formed by the first coil in the reaction chamber is larger than the edge portion, and the second coil The edge portion of the electromagnetic field formed in the reaction chamber is larger than the middle portion, and the electromagnetic fields of the middle portion and the edge portion of the reaction chamber are respectively adjusted by adjusting the power supply of the first coil and the second coil, respectively, and the uniformity of the distribution of the slurry in the reaction chamber is improved. The first embodiment, as shown in FIG. 3, the inductor-switching type electropolymerization processing apparatus of the first embodiment mainly includes: a reaction chamber 20'. The reaction chamber 20 includes a top cover 2a, a bottom portion, and a side wall 2, the top cover 20a. The material is an insulating material, such as quartz, etc., and the bottom and sidewall materials are conductive materials, such as metal!s, etc.; the first axis 22 disposed above the top cover of the reaction chamber 2G, stacked on the first a second coil 23 above the thin 22; a first power source 24 for supplying power to the first coil 22; and a second power source 25 for supplying power to the second coil 23, and further, a wafer stage a is disposed in the reaction chamber 2? For carrying and fixing the wafer, the wafer stage 21 is directly facing the range covered by the first coil 22 and the second coil 23, that is, the wafer stage U is the coverage of the process operation, and the process operation may be plasma dry etching. , plasma enhanced chemical vapor deposition, etc. The first coil 22 and the second coil 23 together constitute the inductive coupling coil in the embodiment. The intermediate portion of the electromagnetic field formed by the first coil 22 in the reaction chamber 20 is larger than the edge portion, and the second coil 23 is in the reaction chamber 2 The electromagnetic 201223341% edge portion formed inside is larger than the inter-cloth portion. In the present embodiment, the distance from the coil of the first coil 22 to the reaction chamber 2〇 is smaller than the distance from the edge portion to the reaction chamber 2〇, and the distance from the coil of the central portion of the second coil 23 to the reaction chamber 20 is greater than the edge portion. The distance to the reaction chamber 2G. Specifically, the first coil 22 and the second coil 23 are spirally wound into a dome shape, and the top of the first coil 22 is opposed to the top of the second coil 23. Further, the first coil 22 and the second coil 23 may have a uniform winding density, i.e., where adjacent wires have the same distance therebetween. The insulation between the first coil 22 and the second coil 23 is achieved by an insulating medium, such as filling an insulating dielectric material in an adjacent coil, or placing the first mesh 22 and the second coil 23 in an insulating medium. The material is formed in a coil frame to achieve mutual insulation between the first coil 22 and the second coil 23, and mutual insulation between adjacent two turns of the same coil. Alternatively, the wires used in the other solid pastes of the present invention, the first and second coils 23, are coated with an insulating sheath to achieve mutual mutual interaction between the first coil 22 and the second coil 23. Insulation, and mutual insulation between adjacent two transition lines in the same coil. The RF power outputted by the first power source 24 and the second power source 25 can be independently adjusted. They can be two independent power sources, or can be used for the same power supply device. _ 22 and the second coil 23 supply power. Since the first coil 22 is in an inverted dome shape, the distance from the coil of the central portion to the reaction chamber is smaller than the distance from the edge portion to the reaction chamber, and therefore, the electromagnetic field generated by the coil excitation of the central portion of the first coil 8 201223341 22 is in the reaction chamber. (4) The strength is strong, and the coil of the edge portion of the first coil 22 is far from the top cover of the reaction chamber 2〇, and the electromagnetic field generated by the excitation is weak in the reaction chamber 2〇, so the first through the power source 24 The RF power supplied to the first coil 22 is adjusted, and the range of influence is mainly the central portion of the reaction chamber 20. Similarly, the second coil 23 is in the form of a dome that is placed forward. The RF power supplied to the second coil 23 can be adjusted by the second power source 25. Since the coil of the edge portion of the second coil 23 is closer to the reaction chamber 20 Therefore, the electromagnetic field generated by it exhibits that the edge material is stronger than the central portion. In the actual use of the towel, the electromagnetic field strength of the central portion and the edge portion of the reaction chamber 20 can be adjusted by the first coil 22 and the second coil 23, respectively, since the first coil 22 and the second coil 23 both cover the entire reaction chamber 2〇. The operating range 'and therefore the continuity of its electromagnetic field strength distribution can improve the uniformity of the plasma distribution. In addition, as a preferred embodiment, the direction in which the first power source 24 supplies the current in the first coil 22 is opposite to the direction in which the second power source 25 is supplied to the second coil 23. The first coil 22 and the second coil are caused. The direction of the electromagnetic field generated by the excitation is reversed, which reduces the mutual influence between the two coils, so that the controllability of the adjustment process is higher, and the uniformity of the plasma distribution can be further improved. The second embodiment is shown in FIG. 4. The inductively coupled plasma processing apparatus of the second embodiment mainly includes a reaction chamber 30 including a top cover 3A, a bottom portion and a side wall 3〇b, 201223341 玷1. The material of the material is an insulating material such as quartz, etc., the material of the bottom and side walls 30b is a lightning guide such as metal aluminum, etc.; the second coil 32 disposed above the top cover 3〇a of the reaction chamber 3〇, the stacking arrangement The first edge ring on the second coil 32==2'_32 is supplied with the second power source and the first power source 35 of the first coil 3, and the reaction chamber 3〇 is further provided with the wafer stage 3b. Used to carry and fix wafers. Wherein the 'first coil 33' and the second coil 32 together constitute the inductance consumption in the present embodiment. The coils, similar to the first embodiment, are spirally wound into a dome shape. The top of the first coil 33 is opposite to the bottom of the second coil 32. The center of the winding density of the first line 2 33 is larger than the edge portion. Second, the winding density of _32 is less than the edge portion. Similar to the first-perform, the insulating material can be insulated or used between the first coil 33 and the first-axis %. The wires covered with the insulating sheath are insulated from each other. The RF power output from the -first power source 35 and the second power source 34 can be independently adjusted for supplying power to the first coil 33 and the second coil %, respectively. Similar to the mechanism in the first embodiment, in the present embodiment, the first coil % is a positively placed round, and the RF power supplied to the first coil % can be adjusted by the first power source 35 due to the central portion thereof. The distance of the coil from the reaction chamber is smaller than the distance of the coil of the edge portion from the reaction chamber, and the winding density of the central portion is large, so the influence of the coil is mainly the reaction cavity. The first coil 32 is in an inverted dome shape, and the RF power supplied to the second coil 32 can be adjusted by the second power source, and the range of influence 201223341 is mainly at the edge portion of the reaction chamber 30. As a preferred embodiment, the direction of the current supplied from the first power source 35 to the first coil 33 is opposite to the direction of the current supplied from the second power source 34 into the second coil 32, reducing the mutual relationship between the two coils. The influence makes the adjustment process more controllable and can further improve the uniformity of the plasma distribution. The third embodiment, as shown in FIG. 5, of the third embodiment of the inductor consumable type electric processing device mainly includes a reaction chamber 40 including a top cover 40a, a bottom portion and side walls 4〇b, and a material of the top cover 40a. For the insulating material, such as quartz, etc., the material of the bottom and side walls 4〇b is a conductive material such as metal; the first coil 42 disposed above the top cover 40a of the reaction chamber 4〇 and stacked is disposed on A second coil 43 above the first coil is formed, and a wafer stage 41 is further disposed in the reaction chamber 4 for carrying and fixing the wafer. Further, a power source (not shown) is provided for supplying power to the first coil 42 and the second coil 43, respectively. The first coil 42 and the second coil 43 together constitute the inductive coil of the embodiment, and they are all spirally wound into a planar shape. The center portion of the winding density of the first coil 42 is larger than the edge portion, that is, from the central portion to the edge portion of the top cover 4〇a of the reaction chamber (10), the distance between the adjacent two lines of the 42nd towel gradually increases. The electromagnetic field generated by the excitation of -42 is strong in the central portion, and the plasma of the central portion of the first-thin 42-reaction chamber 4() can be seen. The second axis 43 is gradually tapered to the edge, that is, from the central portion to the edge portion of the top cover 4Ga of the reaction chamber 40, the distance between adjacent two turns of the second coil 201223341 43 is gradually reduced, therefore, The electromagnetic field generated by the excitation of the two coils 43 has a strong intensity at the edge portion, and the plasma density of the edge portion can be adjusted by the second coil 43 to further achieve uniform distribution of electricity in the entire reaction chamber. As a preferred embodiment, the currents in the first coil 42 and the second coil 43 are opposite in direction, which reduces the mutual influence between the two coils, so that the controllability of the adjustment process is higher, and the plasma distribution can be further improved. Uniformity. Of course, in other embodiments, the stacking order of the first coil 42 and the second coil 43 may also be interchanged, that is, the second coil 43 is adjacent to the top cover 4A, and the first coil 42 is stacked on the first The second coil 43 is outside. The fourth embodiment, as shown in FIG. 6, the fourth embodiment of the inductive engagement type electro-processing device mainly comprises a reaction chamber 50, which includes a top cover 5〇a, a bottom portion and a side wall 5〇b, a top cover The material of 50a is an insulating material, such as quartz, etc. The material of the bottom and the side wall is a conductive material, such as a metal material; the first coil 52 disposed above the top cover 50a of the reaction chamber 5G is stacked on the first- a second coil 53 above the coil 52, a third coil 叠 disposed on the second coil 53, and a stacking μ; a fourth coil 55 above the coil 54 and, in addition, a reaction chamber 5 Also (^ has a round stage 51' for carrying and fixing the wafer. Further 'including the power supply not coming out" for respectively to the first coil 52, the second coil 53, the = coil: 4 and the fourth coil 55 power supply. The first coil 52, the second coil 53, the third coil 54, and the fourth coil 55201223341 together constitute the inductive coupling coils of the present embodiment, which are spirally wound into a planar shape, and the winding density between adjacent coils The change trend is reversed, wherein the center portion of the winding density of the first coil 52 is larger than the edge portion, the center portion of the second coil has a smaller center of the winding density than the edge portion, and the center portion of the winding density of the third coil 54 is larger than the edge portion, The center portion of the winding density of the four coils 55 is smaller than the edge portion. In actual towel making, the home line structure provides a more flexible adjustment method, which can achieve uniform distribution of plasma in the entire reaction chamber by adjusting the RF energy supplied to each coil. As a preferred embodiment, the current directions between adjacent coils are opposite. Specifically, the current direction of the second coil 53 and the first coil 52 are opposite, and the current directions of the third coil 54 and the second coil 53 are opposite, fourth. The current direction of the coil 55 and the third coil 54 is opposite. Of course, in other embodiments, the coils included in the inductor engagement coil may be other numbers, such as five, six, eight, etc., and the variation of the winding density between adjacent two coils is opposite. The present invention has been disclosed in the above preferred embodiments, but it is not intended to limit the present invention. Any one skilled in the art can devise the above-mentioned methods and techniques without departing from the spirit and scope of the present invention. (4) The technical solutions make possible changes and modifications, therefore, any simple modifications, equivalent changes and modifications made to the above embodiments in accordance with the technical essence of the present invention are the subject matter of the present invention. Protection of the scheme [simple figure] 13 201223341 FIG. 1 is a schematic cross-sectional structural view of an inductively coupled plasma processing apparatus of the prior art; FIG. 2 is a schematic top view of an inductive coupling coil of the prior art; FIG. 4 is a cross-sectional structural view of the inductively coupled plasma processing apparatus according to the second embodiment of the present invention; FIG. 4 is a cross-sectional structural view of the inductively coupled plasma processing apparatus according to the second embodiment of the present invention; Schematic diagram of the cross-sectional structure of the inductively coupled plasma processing apparatus of the third embodiment; and
是本發明第四實施例的電感耦合型電漿處理裝置的剖 面結構示意圖。 【主要元件符號說明】 10· · ·… •反應腔 11 · . · . · •晶圓載台 12 ..... •電感耦合線圈 13 ..... •電源 14 -.... •晶圓 15 ·.... •内層線圈 16 ..... •周邊線圈 17、ΐ8· ·. •電源 20 ..... •反應腔 201223341 20a · · • · ·頂蓋 20b · · • · ·側壁 2卜·· •··晶圓載台 22 · · · •••第一線圈 23 · · · •·.第二線圈 24 · · · •••第一電源 25 · · · ...第二電源 30 · · · •·.反應腔 30a · · • · ·頂蓋 30b · · • ••侧壁 3卜·· •··晶圓載台 32 · · · .·.第二線圈 33 · · · •••第一線圈 34 · · · ...第二電源 35 · · · •··第一電源 40 · · · .··反應腔 40a . · • · ·頂蓋 40b · · • ••側壁 4卜·· •··晶圓載台 42 · · · •··第一線圈 43 · · · ...第二線圈 50 · · · •··反應腔 15 201223341 50a.....頂蓋 50b.....侧壁 51 ......晶圓載台 52 ......第一線圈 53 ......第二線圈 54 ......第三線圈 55 ......第四線圈 16Fig. is a cross-sectional structural view showing an inductively coupled plasma processing apparatus according to a fourth embodiment of the present invention. [Description of main component symbols] 10· · ·... • Reaction chamber 11 · · · · · Wafer stage 12 ..... • Inductive coupling coil 13 ..... • Power supply 14 -.... • Crystal Circle 15 ·.... • Inner layer coil 16 ..... • Peripheral coil 17, ΐ8··. • Power supply 20 ..... • Reaction chamber 201223341 20a · · • · · Top cover 20b · · • · · Side wall 2 ········································································ Two power sources 30 · · · · ·. Reaction chamber 30a · · · · · Top cover 30b · · • •• Side wall 3 ·············································· ·•••First coil 34 · · · ...the second power source 35 · · · ··· The first power source 40 · · · · · · Reaction chamber 40a · · · · · Top cover 40b · · • •• Side wall 4 ·············································································· 50b.....sidewall 51...wafer stage 52 ... first coil 53 ... second coil 54 ... third coil 55 ... fourth coil 16