201218453 六、發明說明： 【發明所屬之技術 [0001]本發明涉及一種射裝結構，特別是發光二極體封裝結構 ，還涉及一種發光二極體封裝結構的製造方法。 [先前技術3 _2] 相比於傳統的發光源，發光二極體（Light Emitting Diode，LED)具有重量輕、體積小、污染低、壽命長等 優點，其作為一種新型的發光源’已經被越來越多地應 用到各領域當中’如路燈、交通燈、信號燈、射燈及裝 ^ 飾燈等等。 .;丨.:.： ：： ： . ·； [0003] 習知技術中為增加發光二極體的發光效率，通常在發光 二極體封裝結構的製作過程中會在發光二極體晶片周圍 形成反射層’而當使用金屬作為反射層時反射效率比用 非金屬作為反射層高很多。然而使用金屬作為反射層容 易在晶片電性連接的過程中產生電性問題而導致製作過 程複雜。 Ο 【發明内容】 [0004] 有鑒於此’本發明旨在提供一種具有良好反射效率的發 光二極體封裝結構及其製造方法。 [0005] —種發光二極體封裝結構的製造方法，包括以下步驟： 形成基板及在基板上形成電路結構；形成反射結構，該 反射結構包括絕緣層、金屬層和透明層，金屬層位於絕 緣層和透明層之間，反射結構内設有貫穿絕緣層、金屬 層和透明層的穿孔；將反射結構裝設於基板上，其中絕 緣層與基板相接；將發光二極體晶片固定於反射結構的 099135433 表單編號Α0101 第3頁/共21頁 0992061935-0 201218453 牙孔内並電性連結於電路結構；形成封裝層覆蓋發光二 極體晶片；以及切割基板形成多個發光二極體封裝結構 [0006] [0007] [0008] [0009] 種發光二極體封裝結構，包括基板，設置於基板上的 電路結構，裝設於基板上的反射結構，裝設於基板上並 與電路結構電連接的複數個發光二極體晶片，以及覆蓋 發光二極體晶片的封裝層，所述反射結構包括絕緣層、 金屬層和透明層，金屬層位於絕緣層和透明層之間，絕 緣層與基板相接，所述反射結構具有貫穿絕緣層、金屬 層和透明層的穿孔，所述發光二極體晶片裝設於該穿孔 内。 採用依次為絕緣層、金屬層和透明層構成的反射結構， 能夠利用具有高反射率的金屬作為反射層起到增加反射 效果的作用，還因為具有絕緣層，能夠有效的避免發光 —極體晶片連入電路時產生的不良電性問題，使製作過 程簡便。 下面參照附圖，結合具體實施例對本發明作進一步的描 述。 【實施方式】 如圖8所示，本發明一實施例的發光二極體封裝結構5〇包 括基板10，設置於基板1〇上的電路結構12及反射杯ι4 , 與基板10上表面和反射杯14内壁相貼和的反射結構2〇， 裝設於基板10上並置於反射杯丨4内、同時與電路結構12 電連接的發光二極體晶片30，以及覆蓋發光二極體晶片 099135433 3 〇於反射杯14内的封裝層4 0。 表單編號A0101 第4頁/共21頁 所述反射結構20自下至上 0992061935-0 201218453 [0010] ο [0011] [0012] 〇 099135433 依次包括絕緣層21、金屬層μ和透明層23，該反射結構 20底部形成穿孔24，所述發光二極體晶片30容置於該穿 孔24内。所述封裴層4〇内懸浮有螢光轉換材料42。 如圖9所示，本發明另一實施例的發光二極體封裝結構6〇 包括基板10 ’設置於基板10上的電路結構12，與基板10 上表面貼合的反射結構70，裝設於基板10上並與電路結 構12電連接的發光二極體晶片3〇，以及覆蓋發光二極體 晶片30的封裝層8〇。與前述實施例不同之處在於該基板 10上無反射杯’該反射結構70為平鋪於基板10上的平板 ’絕緣層71、金屬層72和透明層73自下至上鋪設。該封 裝層80覆蓋於該基板1〇上包覆發先二極:體^片3〇。 .... ..·：：" . 以下’將結合其他附圖及實施例對本技術方案的發光二 極體封裴結構的製造方法進行詳細說明。 圖1為本發明一實施例發光二極體封裝結構製造方法的步 驟机％圖。请同時參考圖2，首先提供基板1〇，並同時在 基板10上裝設電路結構12。該基板1〇為陶究板，該電路 結構12可通職械、侧或鐳射加卫技術在基板10上形 成孔洞後，再利⑽鍵、錢、電鑄或祕的方式形成 »亥电路、.’D構12也可以是熱電分離的結構，即熱能與電 能的傳遞路徑彼此不同。該基糾上還可以形成複數個 反射杯14，該複數個反射杯14可哺基初卜體成型， 也可以分開成型。該複數個反射杯Η與基板10一起形成 複數個㈣16，該複數個凹陷16剖面雜呈倒梯形其 俯視形狀可以為圓形或矩料，依反射杯Μ内壁環繞的 形狀而定。在本實施例中，θ 、 r反射杯14環繞成矩形凹陷16 表單編號A0101 第5頁/妓21百 " n 0992061935-0 201218453 [0013] [0014] 請同時參閱圖3和圖4，接著形成反射結構2()，該反射結 構20自下至上财包括絕緣層21、金屬㈣和透明㈣ 。該絕緣層21可以與基板1G為同—種材料，例如陶究等 。該金屬層22由具有高反射率的金屬製成，如銀等。透 明層23可以為玻璃或其他透明材料。此三層材料可通過 注塑或工藝—體成型，當'然也可採用分開成型後共 燒或㈣时絲成。該反射結獅的外表_ (也即 絕緣層21的转財卩）與前述基板1{)的凹pM6相匹配， 内部形成娜形容置區27。該反射結獅的底部開設有 穿孔24，該穿孔24用於容置發光二極體晶片3〇，故該穿 孔24的形狀需根據發光二極體晶片3〇的外形及尺寸而定 ’以恰好能夠置入-個發光二極體晶片3〇為佳。該穿孔 24的數量以所需裝入的發光二極體晶片⑽的數量而定。 該反射結構2G的底部還可開設複數個小孔25，用於將發 光二極體晶片30電性連接入電路結構12時導線可經由該 複數個小孔25穿過。在本實施例中，該反射結構2〇底部 開設有-個矩形穿孔24，在該穿孔24兩邊各開設一個較 小的矩形小孔25。當然，在其他#施财，若不採用固 晶打線方式電連接發光二極體晶片3〇，則在該反射結構 2〇的底部只需開設容置發光二極體晶片的穿孔24。 如圖5所不，將反射結構2〇裝設於基板1〇上。將反射結構 20的外表面26緊貼反射杯14内壁，底部緊貼基板1〇，頂 部與反射杯14上沿相平齊。然後利用燒結的技術將反射 、’、《構2 0固疋在基板1 〇上、反射杯1 4内。此時，絕緣層2 ^ 099135433 表單編號Α0101 0992061935-0 201218453 [0015] [0016] θ ❹ [0017] [0018] 的外側面、底面分別與反射杯14内壁、基板10相結合。 如圖6所示，將發光二極體晶片30電性連接於電路結構12 中並設置在反射杯14内。將發光二極體晶片30置於基板 10上，並裝設於反射結構20底部的穿孔24内’在本實施 例中，採用固晶打線方式通過導線32將發光二極體晶片 30與電路結構12相連。在其他實施例中可依據電路結構 的不同採用覆晶或者共晶的方式完成。 圖7為形成封裝層40覆蓋發光二極體晶片30的示意圖。在 反射結構20的容置區27内注入封裝膝，覆蓋發光二極體 晶片30及導線W，待封裝膠還未完全硬化，採用壓模工 藝使封裝膠與反射杯14和反射結構20的上^平齊。封穿 膠完全硬化後形成封裝層4 0。在续·入封裝膠步驟之前， 可先在封裝膠内加入螢光轉換材料42，使封裝膠注入反 射結構20内後使螢光轉換材料42懸浮於封裝層4〇中。冬 然在其他料财，也可叫^封裝^ 後待其硬化後均勻塗布於該職層4G上表面（圖未干） ，同樣起到到改變光學特性的作用。其中f光轉換㈣ 42可以為石權石基螢絲、錢«㈣粉、原石夕酸睡 基榮光粉、雜物基榮絲1代鎵酸鹽㈣光粉和氣 化物基螢光粉。 最後將完成封裝步驟的發光二極體封裝結構進行㈣ 得到多個分誠發光二鋪封“構㈣8解 所述反射結構2 〇採用絕緣層21、 層構成’由於絕緣層21能夠使金 金屬層22和透明層23三 屬層22與底部連接的電 099135433 表單編號A0101 第7頁/共21頁 0992061935-0 201218453 [0019] [0020] [0021] [0022] [0023] [0024] 099135433 路結構1 2保持絕緣，避免了封裝過程中產生不良的電性 問題。中間的金屬層22比其他非金屬材料具有更高的反 射率，能夠有效的提高發光二極體封裝結構的出光效率 。金屬層22上面的透明層23能夠使光線透過透明層23射 向金屬層2 2，從而達到反射效果，同時將金屬層2 2與封 裝膠隔離開，使金屬層22具有很好的穩定性，保證發光 二極體封裝結構的良率。 综上所述，本發明確已符合發明專利之要件，遂依法提 出專利申請。惟，以上所述者僅為本發明之較佳實施方 式，自不能以此限制本案之申請專利範圍。舉凡熟悉本 案技藝之人士援依本發明之精神所作之等效修飾或變化 ，皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 圖1為本發明的發光二極體封裝結構的製造方法步驟流程 示意圖。 圖2為本發明的發光二極體封裝結構的製造方法步驟一得 到的發光二極體封裝結構的剖面示意圖。 圖3為本發明的發光二極體封裝結構的製造方法步驟二得 到的發光二極體封裝結構的剖面示意圖。 圖4為本發明的發光二極體封裝結構的製造方法步驟二得 到的發光二極體封裝結構的俯視示意圖。 圖5為本發明的發光二極體封裝結構的製造方法步驟三得 到的發光二極體封裝結構的剖面示意圖。 圖6為本發明的發光二極體封裝結構的製造方法步驟四得 表單編號A0101 第8頁/共21頁 0992061935-0 [0025] 201218453 到的發光二極體封裝結構的剖面示意圖。 [0026] 圖7為本發明的發光二極體封裝結構的製造方法步驟五得 到的發光二極體封裝結構的剖面示意圖。 [0027] 圖8為本發明的發光二極體封裝結構的製造方法步驟六得 到的發光二極體封裝結構的剖面示意圖。 [0028] 圖9為本發明另一實施例的發光二極體封裝結構的剖面示 意圖。 【主要元件符號說明】 ^ [0029]基板：10 [0030] 電路結構：12 [0031] 反射杯：14 [0032] 凹陷：16 [0033] 反射結構：20、70 [0034] 絕緣層：21、71 〇 [0035] 金屬層：22、72 [0036] 透明層：23、73 [0037] 穿孔：24 [0038] 小孔：25 [0039] 外表面：26 [0040] 容置區：27 099135433 發光二極體晶片：30 表單編號A0101 第9頁/共21頁 0992061935-0 [0041] 201218453 [0042] 導線· 3 2 [0043] 封裝層：40、80 [0044] 螢光轉換材料：42 [0045] 發光二極體封裝結構：50、60 099135433 表單編號A0101 第10頁/共21頁 0992061935-0201218453 VI. Description of the Invention: [Technical Field] The present invention relates to a radiation structure, in particular to a light emitting diode package structure, and to a method of manufacturing a light emitting diode package structure. [Prior Art 3 _2] Compared with the conventional light source, the Light Emitting Diode (LED) has the advantages of light weight, small volume, low pollution, long life, etc., and it has been used as a new type of light source. It is increasingly used in various fields such as street lights, traffic lights, signal lights, spotlights and decorative lights. ..:::::: [0003] In the prior art, in order to increase the luminous efficiency of the light-emitting diode, it is usually around the light-emitting diode wafer during the fabrication of the light-emitting diode package structure. The reflective layer is formed and the reflection efficiency is much higher when non-metal is used as the reflective layer when metal is used as the reflective layer. However, the use of metal as a reflective layer facilitates electrical problems during the electrical connection of the wafer, resulting in a complicated fabrication process. SUMMARY OF THE INVENTION [0004] In view of the above, the present invention is directed to a light-emitting diode package structure having good reflection efficiency and a method of fabricating the same. [0005] A method of manufacturing a light emitting diode package structure, comprising the steps of: forming a substrate and forming a circuit structure on the substrate; forming a reflective structure including an insulating layer, a metal layer, and a transparent layer, wherein the metal layer is in insulation Between the layer and the transparent layer, the reflective structure is provided with a through hole penetrating the insulating layer, the metal layer and the transparent layer; the reflective structure is mounted on the substrate, wherein the insulating layer is in contact with the substrate; and the light emitting diode chip is fixed on the reflective layer Structure 099135433 Form No. 1010101 Page 3/Total 21 Page 0992061935-0 201218453 The hole is electrically connected to the circuit structure; the encapsulation layer covers the LED chip; and the substrate is cut to form a plurality of LED packages. [0008] [0008] [0009] [0009] [0008] [0002] A light-emitting diode package structure, comprising a substrate, a circuit structure disposed on the substrate, a reflective structure mounted on the substrate, mounted on the substrate and electrically connected to the circuit structure a plurality of connected light emitting diode chips, and an encapsulation layer covering the light emitting diode chip, the reflective structure comprising an insulating layer, a metal layer and a transparent layer A metal layer located between the transparent layer and the insulating layer, the insulating layer in contact with the substrate, the reflective structure having perforations through the insulating layer, a metal layer and a transparent layer, the light emitting diode chip mounted in the through hole. By using a reflective structure composed of an insulating layer, a metal layer and a transparent layer in turn, it is possible to use a metal having a high reflectance as a reflective layer to increase the reflection effect, and also to have an insulating layer, thereby effectively avoiding a light-emitting body wafer The poor electrical problems caused by the connection to the circuit make the manufacturing process simple. The invention will now be further described with reference to the specific embodiments thereof with reference to the accompanying drawings. [Embodiment] As shown in FIG. 8, a light emitting diode package structure 5A according to an embodiment of the present invention includes a substrate 10, a circuit structure 12 disposed on the substrate 1 and a reflective cup ι4, and an upper surface and a reflection of the substrate 10. a reflecting structure 2 相 attached to the inner wall of the cup 14 , a light emitting diode chip 30 mounted on the substrate 10 and disposed in the reflective cup 4 while being electrically connected to the circuit structure 12 , and covering the light emitting diode wafer 099135433 3 The encapsulation layer 40 is inside the reflective cup 14. Form No. A0101 Page 4 of 21 Reflective Structure 20 from bottom to top 0992061935-0 201218453 [0011] [0012] 〇099135433 sequentially includes an insulating layer 21, a metal layer μ, and a transparent layer 23, which reflects A through hole 24 is formed in the bottom of the structure 20, and the light emitting diode chip 30 is received in the through hole 24. A fluorescent conversion material 42 is suspended in the sealing layer 4 . As shown in FIG. 9 , a light emitting diode package structure 6 另一 according to another embodiment of the present invention includes a circuit structure 12 disposed on a substrate 10 , and a reflective structure 70 attached to the upper surface of the substrate 10 . A light-emitting diode wafer 3 on the substrate 10 and electrically connected to the circuit structure 12, and an encapsulation layer 8 covering the light-emitting diode wafer 30. The difference from the foregoing embodiment is that there is no reflective cup on the substrate 10. The reflective structure 70 is a flat plate 'insulating layer 71, a metal layer 72 and a transparent layer 73 laid on the substrate 10 from bottom to top. The encapsulation layer 80 covers the substrate 1 and is coated with a first electrode: a body 3 . The following describes the manufacturing method of the light-emitting diode sealing structure of the present invention in conjunction with other drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing the steps of a method for fabricating a light emitting diode package structure according to an embodiment of the present invention. Referring to FIG. 2 at the same time, the substrate 1 is first provided, and at the same time, the circuit structure 12 is mounted on the substrate 10. The substrate 1 is a ceramic board, and the circuit structure 12 can form a hole on the substrate 10 by means of a mechanical, side or laser-assisted technology, and then form a circuit by means of a key, money, electroforming or secret. The 'D structure 12' may also be a thermoelectrically separated structure, that is, the transfer paths of thermal energy and electric energy are different from each other. The base can also form a plurality of reflective cups 14, which can be formed into a body or can be separately formed. The plurality of reflector cups are formed together with the substrate 10 to form a plurality of (four) 16 portions having a cross-section of an inverted trapezoid. The shape of the recesses may be circular or rectangular, depending on the shape of the inner wall of the reflector cup. In the present embodiment, the θ, r reflective cup 14 is surrounded by a rectangular recess 16 Form No. A0101 Page 5 / 妓 21 hundred " n 0992061935-0 201218453 [0013] [0014] Please also refer to FIG. 3 and FIG. 4, followed by A reflective structure 2 () is formed, which includes an insulating layer 21, a metal (four), and a transparent (four) from bottom to top. The insulating layer 21 may be of the same material as the substrate 1G, for example, ceramics or the like. The metal layer 22 is made of a metal having high reflectance such as silver or the like. The transparent layer 23 can be glass or other transparent material. The three-layer material can be formed by injection molding or process-molding, but it can also be formed by co-firing after split molding or (4). The appearance of the reflection lion _ (i.e., the transfer of the insulating layer 21) matches the concave pM6 of the substrate 1{), and a Na-shaped accommodating area 27 is formed inside. The bottom of the reflective lion is provided with a through hole 24 for accommodating the LED chip 3, so the shape of the through hole 24 is determined according to the shape and size of the LED chip 3. It is preferable to be able to insert a light-emitting diode wafer 3 . The number of the perforations 24 is determined by the number of light-emitting diode chips (10) to be loaded. A plurality of small holes 25 are defined in the bottom of the reflective structure 2G for electrically connecting the light-emitting diode chip 30 through the plurality of small holes 25 when electrically connecting the light-emitting diode chip 30 to the circuit structure 12. In this embodiment, a rectangular through hole 24 is formed in the bottom of the reflective structure 2, and a small rectangular small hole 25 is formed on each side of the through hole 24. Of course, in other #富财, if the LED array is electrically connected without using a solid crystal wiring method, only the through hole 24 for accommodating the LED chip is required at the bottom of the reflective structure 2?. As shown in Fig. 5, the reflective structure 2 is mounted on the substrate 1A. The outer surface 26 of the reflective structure 20 is in close contact with the inner wall of the reflective cup 14, and the bottom is in close contact with the substrate 1〇, and the top portion is flush with the upper surface of the reflective cup 14. Then, by means of sintering, the reflection, ', and 20' are fixed on the substrate 1 and in the reflective cup 14. At this time, the insulating layer 2 ^ 099135433 Form No. Α 0101 0992061935-0 201218453 [0016] The outer side surface and the bottom surface of the θ ❹ [0018] are respectively combined with the inner wall of the reflective cup 14 and the substrate 10. As shown in FIG. 6, the LED wafer 30 is electrically connected to the circuit structure 12 and disposed within the reflective cup 14. The LED substrate 30 is placed on the substrate 10 and disposed in the through hole 24 at the bottom of the reflective structure 20. In the present embodiment, the LED array 30 and the circuit structure are connected by the wire 32 by means of a solid crystal wire bonding method. 12 connected. In other embodiments, flip chip or eutectic may be used depending on the circuit structure. FIG. 7 is a schematic diagram of forming an encapsulation layer 40 covering the LED array 30. The package knee is injected into the accommodating area 27 of the reflective structure 20 to cover the LED substrate 30 and the wire W. The package to be encapsulated is not completely hardened, and the encapsulant and the reflective cup 14 and the reflective structure 20 are formed by a compression molding process. ^ 平齐. The encapsulation layer 40 is formed after the encapsulation gel is completely cured. Before the step of encapsulating the encapsulant, the fluorescent conversion material 42 may be added into the encapsulant to inject the encapsulant into the reflective structure 20 to suspend the fluorescent conversion material 42 in the encapsulation layer. Winter is in other materials, it can also be called ^ package ^ after it is hardened and evenly coated on the upper surface of the 4G layer (not shown), also plays a role in changing optical properties. Among them, the f-light conversion (four) 42 can be Shiquanshi-based filament, Qian«(4) powder, Yuanshiji acid-based glory powder, and the first-class gallate (4) powder and gas-based phosphor powder. Finally, the LED package structure in which the encapsulation step is completed is carried out. (IV) A plurality of decentralized light-emitting two-ply seals are formed. (4) 8 is used to solve the reflective structure 2, and the insulating layer 21 is used to form a layer. 22 and transparent layer 23 three genera layer 22 connected to the bottom of the electric 099135433 Form No. A0101 Page 7 / 21 pages 0992061935-0 201218453 [0020] [0012] [0024] [0024] [0024] 099135433 Road structure 1 2 maintains insulation, avoiding undesirable electrical problems during the packaging process. The intermediate metal layer 22 has higher reflectivity than other non-metallic materials, and can effectively improve the light-emitting efficiency of the light-emitting diode package structure. The transparent layer 23 on the upper surface of the 22 layer enables the light to pass through the transparent layer 23 to the metal layer 22 to achieve a reflection effect, and at the same time isolates the metal layer 22 from the encapsulant, so that the metal layer 22 has good stability and ensures illumination. The yield of the diode package structure. In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention. The scope of the patent application in this case cannot be limited. Any equivalent modifications or variations made by those skilled in the art to the spirit of the present invention should be included in the scope of the following patent application. FIG. 2 is a schematic cross-sectional view showing a step of manufacturing a light emitting diode package structure according to a first embodiment of the present invention. FIG. FIG. 4 is a cross-sectional view of a light emitting diode package structure obtained in step 2 of the method for fabricating a light emitting diode package structure according to the manufacturing method of the light emitting diode package structure. FIG. Figure 5 is a cross-sectional view showing a light emitting diode package structure obtained by the third step of the method for fabricating a light emitting diode package structure of the present invention. Fig. 6 is a fourth step of the manufacturing method of the light emitting diode package structure of the present invention. No. A0101 Page 8 of 21 0992061935-0 [0025] A cross-section of the LED package structure of 201218453 Figure 7 is a cross-sectional view showing a light emitting diode package structure obtained in the fifth step of the method for fabricating a light emitting diode package structure according to the present invention. [0027] FIG. 8 is a light emitting diode package structure of the present invention. Figure 9 is a schematic cross-sectional view showing a light emitting diode package structure according to another embodiment of the present invention. [0028] Fig. 9 is a cross-sectional view showing a light emitting diode package structure according to another embodiment of the present invention. :10 [0030] Circuit structure: 12 [0031] Reflective cup: 14 [0032] Depression: 16 [0033] Reflective structure: 20, 70 [0034] Insulation: 21, 71 〇 [0035] Metal layer: 22, 72 Transparent layer: 23, 73 [0037] Perforation: 24 [0038] Small hole: 25 [0039] Outer surface: 26 [0040] accommodating area: 27 099135433 Light-emitting diode wafer: 30 Form No. A0101 No. 9 Page / Total 21 pages 0992061935-0 [0041] 201218453 [0042] Wires · 3 2 [0043] Encapsulation layer: 40, 80 [0044] Fluorescent conversion material: 42 [0045] Light-emitting diode package structure: 50, 60 099135433 Form No. A0101 Page 10 / Total 21 Page 0992061935-0