TW201216382A - Power module - Google Patents

Power module Download PDF

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Publication number
TW201216382A
TW201216382A TW099134616A TW99134616A TW201216382A TW 201216382 A TW201216382 A TW 201216382A TW 099134616 A TW099134616 A TW 099134616A TW 99134616 A TW99134616 A TW 99134616A TW 201216382 A TW201216382 A TW 201216382A
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Taiwan
Prior art keywords
power
power module
module
heat dissipating
converter
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Application number
TW099134616A
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Chinese (zh)
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TWI446462B (en
Inventor
jian-hong Ceng
Shou-Yu Hong
qi-feng Ye
Xue-Tao Guo
Ai-Xing Tong
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Delta Electronics Inc
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Publication of TW201216382A publication Critical patent/TW201216382A/en
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Publication of TWI446462B publication Critical patent/TWI446462B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

A power module includes a first power chip and a second power chip, both of which have at least two electrodes. The power module is applied to a power converter having a power density more than 15w/inch<SP>3</SP> and a maximum efficiency greater than 92%, or to a power converter having a power density more than 20w/inch<SP>3</SP>, or and a power converter having a maximum efficiency greater than 93%. At least one of the power chips operates at a frequency more than 25kHz.

Description

201216382 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明係關於一種功率模組’特別關於—種應用於電源 變換器之功率模組。 [0002] t 【先前技術】 高效率和高功率密度一直是業界對電源變換器的要求。 〇 〇 高效率意味著減少能耗，利於節能減排保護環境，並咸 少使用成本。高功率密度則意味著體積小、重量輕，、咸 少運輸成本和空間需求’從而減少建設成本；高功率密 度也意味者材料使用量的減少’進步利於節能減排伴 遵環境。因此’電源領域對高效率、高功率.密度的追求 將永不停息。 電源變換器由於用途不同，其種類較多。由轉換電能類 型來分’其可分為：非隔離型AC/DC電源變換器，例如， 由一個用於功率因數校正（下稱PFC電路）的AC/DC轉換 電路組成；非隔離型DC/DC電源變換器；隔離型DC/DC變 換器；隔離型AC/DC電捧變換器，例如，由一個PFC電路 加一個或者多個DC/DC變換器而成；DC/AC、AC/AC等等 。由於需要轉換的電能性質和轉換的級數不同，各種變 換器的容易達成的功率密度和效率也不盡相同。以隔離 型AC\DC電源變換器為例，目前業界普遍的功率密度為 l〇w/inch3 ’效率為90%左右。非隔離型AC/DC電源變換 器、隔離型DC/DC變換器和DC/AC的效率和功率密度則會 更高些。 099134616 如前所提，電源變換器的高效率意味著低能耗。如效率 90%時’其轉換能耗約為整個電源變換器總輸入能量的 表單煸號A0101 第3頁/共47頁 0992060439-0 201216382 ⑽。而效率9U的電源變換n ’其轉換隸則降低為總 輸入他里的9%。也就是說，效率每提升一個點，其能耗 就較90¾效率的電源變換器降低1〇%，極為可觀。事實上 電源變換器效率提升的努力常常以0· 5%甚至〇. 1%的量 級進行。 f源變換H的能耗主要由通態損耗和開關損耗特別是有 源器件的卩·損耗組成mi損耗受工作頻率的影響較 大。電源變換器，特別是開關電源變換器，為降低音頻 噪音，其工作頻率通常在·Hz以上。其實際工作頻率的 選擇文無源n件特別是截件的㈣較大。若磁元件體 積小，為了可靠工作，通常需要高頻率來降低其工作磁 通密度從而帶來高開關祕；或者減小磁性s件中線组 的線徑並增加臣數，從而增加通態損耗，均帶來高損耗 。反之’若磁元件體積大，則可以在保證可#工作的前 提下降低工作頻率從而降低開關損耗；也可以增加磁性 元件中線組的線徑或者減小隨，從而_通態損耗， 以降低總損耗’得到高效奉。 因此，不難理解，提升電源卿的空間利料，是得到 高功率密度或者高效率的關鍵因素之_ 高，留給對電源變換效率很重要的無源器件== 元件的&quot;就越大’就更容易❹収體積的無源元件 ’從而提升電源效率。也可以通過使用大體積的無源器 件來增加電源總功率’從而提升電源變換器的功率密度 。所以’高的電源空間利用率，更易於在特定功率密Z 下達成高效钱者在特定效率Ύ達成高功率密度也有 機會高功率密度和兩效率兼顧。 099134616 表單編號Α0101 第4頁/共47頁 0992060439-0 201216382 ❹ 半導體器件是決定電源變換器效率的重要因素之一。但 使用半導體器件，往往不可避免的需要使用對電變換效 率無益的額外材料，如：保護半導體的封裝材料、幫助 散熱的散熱器、固定半導體器件的夾具等等。這些材料 在電源變換器内部的比例越大，電源的内部空間利用率 就越差。也正因為此，功率半導體器件及其被使用而實 際佔用的空間體積（下稱功率器件佔用空間），越來越 被重視。 而集成功率模組（Integrated Power Module, IPM) ，由於將多個半導體器件集成在一個器件封裝裏，為提 升封裝内的空間利用率提供了可能。但現有功率模組並 不能很好降低功率器件佔用空間，從而少有被高性能電 源轉換器使用。 因此，為進一步提升電源變換器的功率密度或者變換效 率，需要空間利用率高的、成本合理的功率模組解決方 案。目前的已有技術尚不能很好滿足。 〇 [0003] 【發明内容】 有鑑於上述課題，本發明提出了一種適合電源變換器的 功率模組，用以提升功率密度或效率的解決方案，並給 出了支持該解決方案的功率模組實施方案。 為達上述目的，依據本發明之一種功率模組包含一第一 功率器件及一第二功率器件，各該功率器件被封于同一 封料中，各該功率器件具有至少二電極，該等功率器件 之至少一具有至少三電極，該等功率器件之至少一之工 作頻率在25kHz以上，其中該功率模組是應用於一電源變 099134616 換器，該電源變換器内部至少一處功率器件的操作電壓 表單編號A0101 第5頁/共47頁 0 201216382 高於48伏特，該電源變換器之功率密度及最高效率分別 大於15w/inch3和高於92%、或者該電源變換器之功率密 度大於20w/inch3、或者該電源變換器之最高效率高於 93%，該功率模組占該電源變換器總體積比例小於50%， 應用該功率模組的電能變換級處理功率占該電源變換器 總輸出功率至少30%以上，該電源變換器總輸出功率在 150W以上。 前述電源變換器例如是一 AC/DC電源變換器、或隔離型 DC/DC變換器或DC/AC變換器，電源變換器之功率密度及 最高效率分別大於20w/inch3和高於93%、或者電源變換 器之功率密度大於25w/inch3、或者電源變換器之最高效 率高於94%。 在一實施例中，功率模組更包含一第一散熱單元、一導 熱絕緣材料層、一引線框架以及一封料。第一功率器件 及第二功率器件係設置於第一散熱單元上方，第一散熱 單元具有一第一區及一第二區，第一功率器件設置於第 一區。導熱絕緣材料層設置於第二區並具有一絕緣層， 第二功率器件藉由導熱絕緣材料層設置於第一散熱單元 。引線框架與第一功率器件及第二功率器件之至少一電 性連接。封料係包覆第一功率器件、導熱絕緣材料層、 第二功率器件及引線框架之一部分。 在一實施例中，功率模組更包含一第三功率器件、一第 四功率器件、一引線框架以及一封料。第三功率器件設 置於第二功率器件之上，第四功率器件設置於第一功率 器件之上。引線框架位於第一功率器件與第四功率器件 之間，並位於第二功率器件與第三功率器件之間，並位 099134616 表單編號A0101 第6頁/共47頁 0992060439-0 201216382 於第三功率器件及第四功率器件之上。封料係包覆該等 功率器件及引線框架之至少一部分。201216382 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a power module', particularly to a power module applied to a power converter. [0002] t [Prior Art] High efficiency and high power density have been the requirements of the power converters in the industry. 〇 〇 High efficiency means reducing energy consumption, saving energy and reducing emissions, and reducing the cost of use. High power density means small size, light weight, low salt and low transportation costs and space requirements, thus reducing construction costs; high power density also means a reduction in material usage. Advance is conducive to energy conservation and emission reduction. Therefore, the pursuit of high efficiency, high power and density in the power supply field will never stop. Power converters have many types due to their different uses. It can be divided into: non-isolated AC/DC power converters, for example, consisting of an AC/DC converter circuit for power factor correction (hereinafter referred to as PFC circuit); non-isolated DC/ DC power converter; isolated DC/DC converter; isolated AC/DC power converter, for example, one PFC circuit plus one or more DC/DC converters; DC/AC, AC/AC, etc. Wait. Due to the nature of the electrical energy that needs to be converted and the number of stages of conversion, the easily achieved power density and efficiency of the various converters are also different. Taking the isolated AC\DC power converter as an example, the current power density in the industry is about l〇w/inch3 ’ efficiency is about 90%. The efficiency and power density of non-isolated AC/DC power converters, isolated DC/DC converters, and DC/AC are higher. 099134616 As mentioned before, the high efficiency of the power converter means low energy consumption. If the efficiency is 90%, the conversion energy consumption is about the total input energy of the entire power converter. Form No. A0101 Page 3 of 47 0992060439-0 201216382 (10). The efficiency of the 9U power conversion n ’ is reduced to 9% of the total input. That is to say, for every point of efficiency improvement, the energy consumption is reduced by 1% compared to the 902⁄4 efficiency power converter, which is extremely impressive. In fact, the efficiency of power converter efficiency is often carried out on the order of 0.5% or even 1%. The energy consumption of the f-source conversion H is mainly caused by the on-state loss and the switching loss, especially the 卩·loss of the active device. The mi loss is greatly affected by the operating frequency. Power converters, especially switching power converters, typically operate at frequencies above Hz to reduce audio noise. The selection of the actual working frequency is passive, especially for the cut piece (4). If the magnetic component is small in size, in order to work reliably, high frequency is usually required to reduce the working magnetic flux density to bring about high switching secrets; or to reduce the wire diameter of the wire group in the magnetic s piece and increase the number of cells, thereby increasing the on-state loss. Both bring high losses. Conversely, if the magnetic component is large, the operating frequency can be reduced to reduce the switching loss under the premise of ensuring the operation of the device. The wire diameter of the wire group in the magnetic component can be increased or decreased, so that the _ state loss is reduced. The total loss 'gets efficient. Therefore, it is not difficult to understand that the improvement of the power supply of the power supply is the key factor for obtaining high power density or high efficiency, and the passive component that is important for the power conversion efficiency == the larger the component 'It is easier to pick up the volume of passive components' to improve power efficiency. It is also possible to increase the power density of the power converter by using a large volume of passive components to increase the total power of the power supply. Therefore, 'high power space utilization, it is easier to achieve high efficiency at a specific power density Z. At a certain efficiency, achieving high power density also has the opportunity to combine high power density and efficiency. 099134616 Form No. Α0101 Page 4 of 47 0992060439-0 201216382 半导体 Semiconductor devices are one of the important factors determining the efficiency of power converters. However, in the case of semiconductor devices, it is inevitable to use additional materials that are not useful for the efficiency of electrical conversion, such as: packaging materials for protecting semiconductors, heat sinks for heat dissipation, fixtures for fixing semiconductor devices, and the like. The greater the proportion of these materials inside the power converter, the worse the internal space utilization of the power supply. For this reason, power semiconductor devices and the space volume actually occupied by them (hereinafter referred to as power device footprint) are receiving more and more attention. Integrated Power Modules (IPMs), because of the integration of multiple semiconductor devices in a single device package, offer the potential to increase space utilization within the package. However, existing power modules do not reduce the power device footprint and are rarely used by high-performance power converters. Therefore, in order to further improve the power density or conversion efficiency of the power converter, a space-efficient and cost-effective power module solution is required. The current state of the art is not well met. SUMMARY OF THE INVENTION [0003] In view of the above problems, the present invention proposes a power module suitable for a power converter, a solution for improving power density or efficiency, and a power module supporting the solution is provided. implementation plan. To achieve the above objective, a power module according to the present invention includes a first power device and a second power device, each of the power devices being encapsulated in the same sealing material, each of the power devices having at least two electrodes, the power At least one of the devices has at least three electrodes, and at least one of the power devices operates at a frequency above 25 kHz, wherein the power module is applied to a power supply 099134616 converter, and at least one power device operation inside the power converter Voltage Form No. A0101 Page 5 of 47 Page 20121382 Above 16 volts, the power converter and maximum efficiency of the power converter are greater than 15w/inch3 and higher than 92%, respectively, or the power converter's power density is greater than 20w/ Inch3, or the highest efficiency of the power converter is higher than 93%, the power module accounts for less than 50% of the total volume of the power converter, and the power conversion stage processing power of the power module accounts for the total output power of the power converter. At least 30% or more, the total output power of the power converter is above 150W. The power converter is, for example, an AC/DC power converter, or an isolated DC/DC converter or a DC/AC converter. The power converter and the maximum efficiency of the power converter are greater than 20 w/inch 3 and higher than 93%, respectively. The power converter has a power density greater than 25 w/inch 3 or the highest efficiency of the power converter is greater than 94%. In one embodiment, the power module further includes a first heat dissipation unit, a heat conductive material layer, a lead frame, and a material. The first power device and the second power device are disposed above the first heat dissipation unit. The first heat dissipation unit has a first region and a second region, and the first power device is disposed in the first region. The layer of thermally conductive insulating material is disposed in the second region and has an insulating layer, and the second power device is disposed on the first heat dissipating unit by the layer of thermally conductive insulating material. The lead frame is electrically connected to at least one of the first power device and the second power device. The encapsulant encapsulates the first power device, the layer of thermally conductive insulating material, the second power device, and a portion of the leadframe. In one embodiment, the power module further includes a third power device, a fourth power device, a lead frame, and a material. The third power device is disposed above the second power device, and the fourth power device is disposed above the first power device. The lead frame is located between the first power device and the fourth power device, and is located between the second power device and the third power device, and the bit is 099134616. Form No. A0101 Page 6 / Total 47 Page 0992060439-0 201216382 at the third power Above the device and the fourth power device. The encapsulant encapsulates at least a portion of the power devices and lead frames.

Ο 承上所述，由於本發明之功率模組集成了複數功率器件 ’故可大幅提升功率密度或效率’例如該功率模組所廣 用的電源變換器之功率密度及最高效率分別大於 15w/inch3和高於92%、或者電源變換器之功率密度大於 20w/inch3、或者電源變換器之最高效率高於93%。電源 變換器可以是一AC/DC電源變換器、或隔離型DC/])C變換 器、或DC/AC變換器，電源變換器之功率密度及最高效率 可分別大於2〇w/inch3和高於93%、或者電源變換器之功 率密度大於25w/inch3、或者電源變換器之最高效率高於 94%。且該等功率器件之至少一之工作頻率在25kHz以上 。該功率模組作為一元件應用於電源變換器中，該功率 模組占所應用之電源變換器總體積比例小於⑽。該功率 模組作為-功率讀應用於電源變換器中，應用該功率 模組的電能變換級處理功率.占該電源變換器總輸出功率 至少綱以上，該電源變換器總輸出功+在150W以上。該 功率模組為了提升更高空間利用率，適合應用於較為複Λ 雜的系統’前述電源變換器例如是_AC/DG電源變換器、 或隔離型DC/DC變換器WC/AC變換器，該電源變換㈣ 部通常至少-處功率器件的操作電壓高於48伏特。若是 AC/DC電源變換器，該電源變換器内部通常至少—處:率 器件的操作電壓高於200伏特。 另外，由於本發明之第—功率器件非藉由導熱絕緣材料 層設置於散熱單元，故可降低導熱絕緣材料層之成本。 此外通過本發明所揭露的，用以提升電源變 099134616 第7頁/共47頁 表單編號A0101 、®刀平 0992060439-0 201216382 密度或者效率的封裝方法和結構，可以獲得與現有技術 相比，更佳的熱性能，電性能，經濟性能，EMC性能與更 高的可靠性。其内部空間利用率很高，使用方便，非常 有利於提高變換器功率密度或者效率。而本發明給出的 具體功率模組具體實施，也非常可行有效。本發明非常 適合用以提升電源變換器的整體性能和性價比。 此外，本發明功率模組將複數功率器件堆疊在一起，既 可以減少連接線減低通態損耗，又可以減少高頻阻抗， 降低開關損耗，進一步提升電源性能。而且對於橋式電 路，包括半橋、全橋、三相橋等，堆疊後就無需原先用 於絕緣的部分材料，既可節約成本，又可提升空間利用 率，進一步提升電源變換器性能。 【實施方式】 [0004] 以下將參照相關圖式，說明依本發明較佳實施例之一種 功率模組，其中相同的元件將以相同的參照符號加以說 明。 請參照圖1所示，本發明較佳實施例之一種功率模組10可 例如應用於電源變換器（power converter)或是其他 需要功率變換的裝置上，且功率模組10所應用的一電源 變換器之功率密度及最高效率分別大於15w/inch3和高於 92%、或者電源變換器之功率密度大於20w/inch3、或者 電源變換器之最高效率高於93%。電源變換器可以是一 AC/DC電源變換器、或隔離型DC/DC變換器、或DC/AC變 換器，電源變換器之功率密度及最高效率分別大於 20w/inch3和高於93%、或者電源變換器之功率密度大於 25w/inch3、或者電源變換器之最高效率高於94%。另外 099134616 表單編號 A0101 第 8 頁/共 47 頁 0992060439-0 201216382 ，電源變換器也可為交流/交流（AC/AC )變換器。若電 源變換器應用於AC/DC電源變換器上，功率模組1〇則可應 用於電源變換器之功率因數校正部分（power fact〇r correction，PFC)、DC/DC— 次侧部分（以下稱 D2D_Pri)或DC/DC二次侧部分（以下稱D2D_Sec)。功 率模組10占電源變換器總體積比例小於5〇%，應用該功率 模組的電能變換級處理功率占該電源變換器總輸出功率 至少30%以上’該電源變換器總輸出功率在15〇w以上，該 Ο 電源變換器内部至少一處功率.器件..的操作電壓高於Μ伏 特。As described above, since the power module of the present invention integrates a plurality of power devices, the power density or efficiency can be greatly improved. For example, the power converters and power efficiencies of the power converters widely used in the power modules are respectively greater than 15 w/ Inch3 and above 92%, or the power converter power density is greater than 20w/inch3, or the highest efficiency of the power converter is higher than 93%. The power converter can be an AC/DC power converter, or an isolated DC/]) C converter, or a DC/AC converter. The power density and maximum efficiency of the power converter can be greater than 2〇w/inch3 and high, respectively. At 93%, or the power converter power density is greater than 25w / inch3, or the highest efficiency of the power converter is higher than 94%. And at least one of the power devices operates at a frequency above 25 kHz. The power module is applied as a component to a power converter, and the power module occupies less than (10) the total volume ratio of the power converter to be applied. The power module is used as a power reading in a power converter, and the power conversion stage processing power of the power module is applied. The total output power of the power converter accounts for at least the above, and the total output power of the power converter is above 150 W. . In order to improve the utilization of space, the power module is suitable for a more complex system. The aforementioned power converter is, for example, a _AC/DG power converter, or an isolated DC/DC converter WC/AC converter. The power conversion (four) section typically has at least - the operating voltage of the power device is above 48 volts. In the case of an AC/DC power converter, the power converter typically has at least a rate of operation of the device above 200 volts. In addition, since the first power device of the present invention is not disposed on the heat dissipating unit by the thermally conductive insulating material layer, the cost of the thermally conductive insulating material layer can be reduced. In addition, the packaging method and structure for improving the density or efficiency of the power supply 099134616, the 7th/47 page form number A0101, the ® knife flat 0992060439-0 201216382 can be obtained by the present invention. Good thermal performance, electrical performance, economic performance, EMC performance and higher reliability. Its internal space utilization is very high and easy to use, which is very beneficial to improve converter power density or efficiency. The specific implementation of the specific power module given by the present invention is also very feasible and effective. The invention is well suited for improving the overall performance and cost performance of a power converter. In addition, the power module of the present invention stacks a plurality of power devices together, which can reduce the connection line to reduce the on-state loss, reduce the high-frequency impedance, reduce the switching loss, and further improve the power supply performance. Moreover, for bridge circuits, including half-bridges, full-bridges, and three-phase bridges, after stacking, some materials originally used for insulation are not needed, which can save cost and improve space utilization, and further improve power converter performance. [Embodiment] Hereinafter, a power module according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings, wherein like elements will be described with the same reference numerals. Referring to FIG. 1 , a power module 10 according to a preferred embodiment of the present invention can be applied to, for example, a power converter or other device that requires power conversion, and a power source applied to the power module 10 . The power density and maximum efficiency of the converter are greater than 15w/inch3 and higher than 92%, respectively, or the power density of the power converter is greater than 20w/inch3, or the highest efficiency of the power converter is higher than 93%. The power converter can be an AC/DC power converter, or an isolated DC/DC converter, or a DC/AC converter. The power converter and the maximum efficiency of the power converter are greater than 20 w/inch 3 and higher than 93%, respectively. The power converter has a power density greater than 25 w/inch 3 or the highest efficiency of the power converter is greater than 94%. In addition, 099134616 Form No. A0101 Page 8 of 47 0992060439-0 201216382 The power converter can also be an AC/AC converter. If the power converter is applied to an AC/DC power converter, the power module 1〇 can be applied to the power factor correction part (PFC), DC/DC-sub-side part of the power converter (below It is called D2D_Pri) or the DC/DC secondary side part (hereinafter referred to as D2D_Sec). The power module 10 occupies less than 5〇% of the total volume of the power converter, and the power conversion stage processing power of the power module accounts for at least 30% of the total output power of the power converter. The total output power of the power converter is 15〇. Above w, the Ο power converter has at least one power inside. The operating voltage of the device is higher than ΜV.

功率模組10係為一封裝體，包含複數功率器件（p〇wer chip)，如第一功率器件12及·r第二功率器件14。第一 功率器件12及第二功率器件14之至少一和工作頻率在 25kHz以上，以提升功率轉換效能。以卞為本實施例之功 率模組10的較佳實施態樣，功率模組1Q包含一第一散熱 單元（heat sink) 11、一導熱絶緣村料層' 一引線 框架（lead frame) 1:5以及一封料（molding mater_ ial ) 16。第一散熱單元u設置於封裝體之一底側，並具 有一第一區111及一第二區112。第一功率器件12及第二 功率器件14係設置於第一散熱單元丨丨上方，第一功率器 件12設置於第一區111，導熱絕緣材料層13設置於第二區 112。第二功率器件14設置於導熱絕緣材料層13並與引線 框架15電性連接。封料1 6係包覆第一功率器件丨2、導熱 絕緣材料層13、第二功率器件μ及引線框架15之至少一 部V，並構成為封裝體的主要外觀。第一功率器件12及 第一功率器件14被封于同一封料16中。第一功率器件j 2 099134616 表單編號A0101 第9頁/共47頁 0992060439-0 201216382 、或及第二功率器件1 4該電源變換器内部至少一處功率 器件的操作電壓高於48伏特。 第一散熱單元11可以是一獨立部件或與引線框架15—體 成型，並可為電和熱的良導體，例如銅。於此，散熱單 元11係作為第一功率器件12的載板。第一散熱單元11可 完全設置於封料16内、或部分位元於封料16外、或完全 位於封料16外。此外，第一散熱單元11之厚度可大於功 率模組1 0之厚度的20 %，且小於3mm。保證良好的熱傳遞 後，熱量實現從功率器件傳遞到散熱單元中，再由散熱 單元橫向傳遞到各個方向，以幫助實現各個方向的熱均 勻性。那麼，該散熱單元就需要有一定的厚度以便支撐 橫向傳遞功能。本發明提出，該散熱單元的厚度以大於 功率模組厚度T的20%為佳。由於散熱單元為熱良導體， 以銅為例，其導熱係數可以達到400W/m. K。若其厚度占 到整體的20%以上，則意味著整個功率模組中，散熱單元 所在區間橫向熱傳遞的平均能力在400 W/m. K x20% =80W/m. K以上，會更有利於熱的橫向傳遞。該比例越高 ，橫向導熱能力就越好，更容易實現熱的均勻性；該比 例高，也意味著封料等相對非熱良導體比例低，厚度薄 ，更容易將散熱單元上的熱帶到功率模組的表面，以便 與表面流體進行熱交換。也就是說，在散熱單元寬度一 定的前提下，其厚度越大，越容易具備大的截面積，占 整體比例就越大，熱傳遞能力就越強。但實際上，散熱 單元厚度要與整體厚度和成本等因素權衡。以滿足總厚 度小於6mm為例，散熱單元厚度以不超過3mm為宜。而基 於前述，其厚度占功率模組整體厚度當在20 %以上為佳。 099134616 表單編號A0101 第10頁/共47頁 0992060439-0 201216382 這樣更有益於實現上述之雙面散熱特性。 第一功率器件或第二功率器件具有至少二電極，該些功 率器件之至少一具有至少三電極，例如第一功率器件12 及/或第二功率器件14具有至少三電極。功率器件例如為 金屬氧化物半導體場效電晶體（M0SFET)的器件，對於 一個M0SFET的器件而言，其通常有兩個相對平行的面： 上表面和下表面。上表面上往往會設置兩個電極：源極 (source)和閘極（gate)，而下表面電極為漏極（ drain)，下表面利用一鍵接材料層17可直接與散熱單元 11組裝，鍵接材料層17可包含鋅焊的焊料、導電銀膠、 或燒結金屬材料等。 此類鍵接材料的熱導係數較高（通常不低於2W/m.K)， 且此層的厚度可以控制得比較薄（例如200um以下，通常 低於lOOum)。因此，從功率器件12和散熱單元11之間 的傳導熱阻可以控制的比較低。例如，此鍵接材料層17 的熱導率為20W/m. K，厚度為lOOum，面積為10mm見方 ，其熱阻為0. 05K/W。而第一散熱單元11自身的傳導熱 阻通常也非常低，因此，就可以獲得非常低的器件結點 至第一散熱單元11外殼的熱阻（Rjc)，且，由於第一散 熱單元11的熱容較大，因此，功率器件的抗熱衝擊的性 能也很優良。總而言之’即直接组裝至第一散熱單元11 的第一功率器件12的熱性能非常優良。且由於第一散熱 單元11的存在，功率模組10的熱會較均勻，更有利於熱 管理。當然，此處僅以功率器件為例進行描述。 由於本實施例之封裝類型為電源内部使用，為達成更高 空間利用率和提升功率模組10性能，該模組表面無需與 099134616 表單编號A0101 第11頁/共47頁 0992060439-0 201216382 内部電路全部電絕緣。以降低絕緣成本和絕緣造成的空 間/良費，散熱能力衷減等不良。所以在一些具體場合， 可以直接利用第一散熱單元11作為導電通道，由於第— 散熱單元11通常為銅、鋁等電的優良導體，且厚度相對 較厚（通常不低於0.5_)，其導電性能極佳。因此，可 以獲得更佳的電氣性能，減小發熱量，從而進一步改善 封裝體的熱性能。更進一步，第一散熱單元11可以直接 作為引腳（Pin)使用，或者與至少一個引腳相連，即， 引腳可以是和第一散熱單元n為一體成型的，或者引腳 和第一散熱單元11通過導線接合(社re b〇n(jing)、焊 接、釺焊、導電膠粘接等方式實現良好的電連接，以更 充分利用該表面之電良導體。這樣大大減小了器件到第 一散熱單元11的熱阻，也使第一散熱單元u這個電良導 體同時被發掘熱和電的能力。從而提升空間利用率，以 利於提升電源變換器功率密度或變換效率。 另外，功率模組10—厚度D可在dmm以下〆由於現在的電 源需求，希望整體越薄越好，一個工業單位厚度（U) ，約為44. 45mm厚，為日後電源走勢。如圖21所示，功 率模組10立裝於一電路板（PCB) β，其最高點離電路板b 的表面的咼度Τ在35mm以下。同時，為了盡可能使用電源 内部空間，該功率模組高度也不宜太低，其高度使用當 在最尚點高度的60%以上為宜，例如：功率模組1〇的最高 點離電路板B上表面的距離當高於35 mm x60% =21mm為 佳。在本實施例中’功率模組1〇之引腳是從功率模組1〇 之下方伸出且直立於電路板B，功率模組為直插型封裝 (如SIP或者DIP)。 099134616 表單編號A0101 第12頁/共47頁 0992060439-0 201216382The power module 10 is a package including a plurality of power devices, such as a first power device 12 and a second power device 14. At least one of the first power device 12 and the second power device 14 and the operating frequency are above 25 kHz to improve power conversion performance. The power module 1Q includes a first heat sink 11 and a heat conductive insulating layer 'lead frame. 5 and a material (molding mater_ ial) 16. The first heat dissipating unit u is disposed on one side of the package body and has a first area 111 and a second area 112. The first power device 12 and the second power device 14 are disposed above the first heat dissipating unit, the first power device 12 is disposed in the first region 111, and the thermally conductive insulating material layer 13 is disposed in the second region 112. The second power device 14 is disposed on the thermally conductive insulating material layer 13 and electrically connected to the lead frame 15. The sealing material 16 is coated with the first power device 2, the thermally conductive insulating material layer 13, the second power device μ, and at least a portion V of the lead frame 15, and is configured as a main appearance of the package. The first power device 12 and the first power device 14 are enclosed in the same seal 16. The first power device j 2 099134616 Form No. A0101 Page 9 of 47 0992060439-0 201216382, or the second power device 1 4 The power converter has at least one power device operating voltage higher than 48 volts. The first heat dissipating unit 11 may be a separate component or formed integrally with the lead frame 15, and may be a good conductor of electricity and heat, such as copper. Here, the heat sink unit 11 serves as a carrier of the first power device 12. The first heat dissipating unit 11 can be completely disposed within the sealing material 16, or a portion of the material outside the sealing material 16, or completely outside the sealing material 16. In addition, the thickness of the first heat dissipation unit 11 may be greater than 20% of the thickness of the power module 10 and less than 3 mm. After a good heat transfer is ensured, heat is transferred from the power device to the heat sink and then transferred laterally to the various directions to help achieve thermal uniformity in all directions. Then, the heat dissipating unit needs to have a certain thickness to support the lateral transfer function. The invention proposes that the thickness of the heat dissipating unit is greater than 20% of the thickness T of the power module. Since the heat dissipating unit is a good heat conductor, in the case of copper, the thermal conductivity can reach 400 W/m.K. If the thickness accounts for more than 20% of the whole, it means that the average power of the lateral heat transfer in the section of the entire power module is 400 W/m. K x 20% = 80 W/m. K or more. Pass in the hot lateral direction. The higher the ratio, the better the lateral thermal conductivity, and the easier to achieve thermal uniformity; the high ratio also means that the proportion of relatively non-heating conductors such as sealing materials is low, the thickness is thin, and it is easier to heat the heat sink unit to the tropical The surface of the power module for heat exchange with surface fluids. That is to say, under the premise of the width of the heat dissipating unit, the larger the thickness, the easier it is to have a large cross-sectional area, and the larger the overall proportion, the stronger the heat transfer capability. In reality, however, the thickness of the heat sink unit is balanced against factors such as overall thickness and cost. For example, the total thickness is less than 6 mm, and the thickness of the heat dissipating unit is preferably not more than 3 mm. Based on the foregoing, the thickness of the power module is preferably more than 20%. 099134616 Form No. A0101 Page 10 of 47 0992060439-0 201216382 This is more beneficial for achieving the above-mentioned double-sided heat dissipation characteristics. The first power device or the second power device has at least two electrodes, at least one of which has at least three electrodes, for example, the first power device 12 and/or the second power device 14 has at least three electrodes. The power device is, for example, a metal oxide semiconductor field effect transistor (MOSFET) device. For a MOSFET device, it typically has two relatively parallel faces: an upper surface and a lower surface. Two electrodes are often disposed on the upper surface: a source and a gate, and a lower surface electrode is a drain, and a lower surface is directly assembled with the heat dissipation unit 11 by using a bonding material layer 17. The bonding material layer 17 may comprise zinc soldered solder, conductive silver paste, or sintered metal material or the like. Such a bonding material has a high thermal conductivity (usually not less than 2 W/m.K), and the thickness of this layer can be controlled to be relatively thin (e.g., below 200 um, usually below 100 um). Therefore, the conduction heat resistance between the power device 12 and the heat dissipation unit 11 can be controlled to be relatively low. 5克/W。 The thermal conductivity of the bonding material layer 17 is 20W / m. K, the thickness is lOOum, the area is 10mm square, the thermal resistance is 0. 05K / W. The conduction heat resistance of the first heat dissipation unit 11 itself is usually also very low, so that the thermal resistance (Rjc) of the very low device node to the outer casing of the first heat dissipation unit 11 can be obtained, and, due to the first heat dissipation unit 11 The heat capacity is large, and therefore, the thermal shock resistance of the power device is also excellent. In short, the thermal performance of the first power device 12 directly assembled to the first heat radiating unit 11 is very excellent. Moreover, due to the presence of the first heat dissipating unit 11, the heat of the power module 10 is relatively uniform, which is more favorable for thermal management. Of course, only the power device is taken as an example here. Since the package type of the embodiment is used internally for the power supply, in order to achieve higher space utilization and improve the performance of the power module 10, the surface of the module does not need to be associated with 099134616 Form No. A0101 Page 11 / Total 47 Page 0992060439-0 201216382 The circuit is fully electrically insulated. In order to reduce the insulation cost and the space/good cost caused by the insulation, the heat dissipation capability is reduced. Therefore, in some specific occasions, the first heat dissipating unit 11 can be directly used as a conductive path. Since the first heat dissipating unit 11 is generally an excellent conductor of copper, aluminum, etc., and has a relatively thick thickness (usually not less than 0.5 _), Excellent electrical conductivity. Therefore, it is possible to obtain better electrical performance and reduce heat generation, thereby further improving the thermal performance of the package. Further, the first heat dissipation unit 11 can be directly used as a pin (Pin) or connected to at least one pin, that is, the pin can be integrally formed with the first heat dissipation unit n, or the pin and the first heat dissipation. The unit 11 achieves good electrical connection by means of wire bonding (jing, welding, soldering, conductive bonding, etc.) to make full use of the electrical conductor of the surface. This greatly reduces the device to The thermal resistance of the first heat dissipating unit 11 also enables the first heat dissipating unit u to be hot and electric at the same time, thereby improving space utilization, thereby facilitating the power converter power density or conversion efficiency. Module 10—thickness D can be less than dmm. Due to the current power supply requirements, the overall thinner is better. An industrial unit thickness (U) is about 44.45mm thick, which is the power supply trend in the future. As shown in Figure 21, The power module 10 is mounted on a circuit board (PCB) β, and the highest point is less than 35 mm from the surface of the circuit board b. At the same time, in order to use the internal space of the power source as much as possible, the power module is not suitable for height. Low, its height is preferably more than 60% of the height of the most popular point. For example, the distance between the highest point of the power module 1〇 and the upper surface of the circuit board B is better than 35 mm x 60% = 21 mm. In the embodiment, the 'power module 1' pin is extended from the lower side of the power module 1 直 and stands on the circuit board B, and the power module is a direct-insertion type package (such as SIP or DIP). 099134616 Form No. A0101 12 pages/total 47 pages 0992060439-0 201216382

另外，圖2 2顯示本發明一種功率模組1 〇之一應用案例截 面圖尺寸。散熱單元11的厚度佔功率模組10的總厚度以 20%以上為佳，舉例來說，採用的散熱單元11 ( Cu )厚度 為1. 5mm，占總厚度比例約為32. 6% ’大於希望的20% ’ 所以具備較好的熱均勻能力。封料16的前表面A1離打線 的線材W最高點設計距離為0. 24mm，小於希望的〇. 5mm， 所以具備較好的功率器件（Die) 12、14往封料16前表 面傳遞能量的能力。封料16距離功率器件上表面的最薄 處為1. 24mm (即封料前表面A1至其中一功率器件12或14 的上表面），實際平均厚度在2. 5mm以下，滿足小於3mm 的期望，並滿足小於總厚度55%，滿足期望的60%要求。 該實施例具備良好的雙面散熱能力’自身散熱能力較強 ，無預留安裝螺絲孔，空間利用率更高v圖22所示之功 率模組10之總厚度為4. 6mm，其依序由:24mm (前表面 A1至線材W最高點）、1.0mm (線材W高度）、〇.175mm (器件1 2、14厚度）、0. 05mnr (焊料厚度）、0· 5mm ( 引線框架15厚度）、0. 05mm (焊料厚度）、l.〇3mm (導 熱絕緣材料層13厚度）、0. 0 5mffl (?焊料厚度）及1. 5mm (散熱單元11 )所組成。 在用於以2700W AC/DC 48V輸出通信電源實驗中，由於 該實施例較現有技術改善體積非常明顯，使得DC/DC級磁 性元件從原先較小的PQ32/30轉為PQ35/35，從而使工作 頻率從原先的100kHz降為65kHz，效率提升大於〇 5%。 同樣，PFC級磁性元件從原先的PQ35/35轉為PQ40/40， 使得工作頻率從原先的70kHz將為45kHz，效率提升大於 〇·3%。而且，由於頻率的降低，驅動損耗也明顯下降， 099134616 表單編號A0101 第13頁/共47頁 0992060439-0 201216382 並由於效率提升，風扇功耗也可以下降，從而帶來輔助 電源損耗大為下降，提升效率可達0. 2%。由於功率模組 ，内部集成多個器件，路徑更為優化，其直流阻抗和交 流阻抗均有下降，直接對效率的貢獻也可達0. 1%。這樣 一來，實際總體效率提升接近1%，非常可觀。這些都主 要是由於該功率模組之實施例大大提升了空間利用率帶 來的。 承上所述，該功率模組尤其適合應用於高性能的電源變 換器中，該電源變換器之功率密度及最高效率分別大於 25w/inch3和高於95%、或者該電源變換器之功率密度大 於30w/inch3、或者該電源變換器之最高效率高於96%。 由於在變壓器的一次侧或二次側等場合中，全橋電路極 為常用。所以，本實施例之功率模組10可被用在全橋電 路中。圖2為全橋電路示意圖，要滿足該應用，功率模組 10至少要能夠排布下8個功能引腳，即V i η、GND、VA、 VB、G1、G2、G3、G4。由於典型應用下，Vin、GND、 VA、VB各引腳間，電壓可達400V，其引腳間絕緣距離以In addition, FIG. 2 2 shows a cross-sectional view of an application case of a power module 1 of the present invention. The singularity of the total thickness is about 32. 6% 'greater than the total thickness ratio of the heat dissipation unit 11 (Cu) is 1. 5 mm, which is greater than the total thickness ratio of about 32. 6% 'greater than The desired 20% 'has better thermal uniformity. The front surface A1 of the sealing material 16 is separated from the wire W of the wire by a design point of 0. 24 mm, which is smaller than the desired 〇. 5 mm, so that a good power device (Die) 12, 14 transmits energy to the front surface of the sealing material 16. ability. The sealing material 16 is at a minimum of 1. 24 mm from the upper surface of the power device (ie, the front surface of the sealing material A1 to the upper surface of one of the power devices 12 or 14), and the actual average thickness is less than 2. 5 mm, satisfying the expectation of less than 3 mm. And meet less than 55% of the total thickness to meet the desired 60% requirement. The total thickness of the power module 10 shown in Fig. 22 is 4. 6mm, which is in order. From: 24mm (front surface A1 to wire W highest point), 1.0mm (wire W height), 〇.175mm (device 1 2, 14 thickness), 0. 05mnr (solder thickness), 0·5mm (lead frame 15 thickness) 0. 05mm (solder thickness), l. 〇 3mm (thermal conductive material layer 13 thickness), 0. 0 5mffl (? solder thickness) and 1. 5mm (heat dissipation unit 11). In the experiment for outputting communication power with 2700W AC/DC 48V, since this embodiment is much more obvious than the prior art, the DC/DC grade magnetic component is changed from the original smaller PQ32/30 to PQ35/35, thereby The operating frequency has been reduced from the original 100 kHz to 65 kHz, and the efficiency has increased by more than 〇 5%. Similarly, the PFC-class magnetic component is switched from the original PQ35/35 to PQ40/40, so that the operating frequency will be 45 kHz from the original 70 kHz, and the efficiency increase is greater than 〇·3%. Moreover, due to the decrease in frequency, the drive loss is also significantly reduced. 099134616 Form No. A0101 Page 13 of 47 0992060439-0 201216382 And due to the increase in efficiency, the fan power consumption can also be reduced, resulting in a significant drop in auxiliary power loss. 2%。 The efficiency is up to 0.2%. 1%。 The power module, the internal integration of multiple devices, the path is more optimized, the DC impedance and the AC impedance are reduced, the direct contribution to the efficiency can also reach 0.1%. As a result, the actual overall efficiency improvement is close to 1%, which is very impressive. These are mainly due to the fact that the power module embodiment greatly enhances space utilization. As described above, the power module is particularly suitable for use in a high performance power converter having a power density and a maximum efficiency greater than 25 w/inch 3 and greater than 95%, respectively, or a power density of the power converter. More than 30w/inch3, or the highest efficiency of the power converter is higher than 96%. Full-bridge circuits are extremely common in applications such as the primary or secondary side of the transformer. Therefore, the power module 10 of the present embodiment can be used in a full bridge circuit. Figure 2 is a schematic diagram of a full-bridge circuit. To meet this application, the power module 10 must be capable of arranging at least eight functional pins, namely V i η, GND, VA, VB, G1, G2, G3, and G4. Due to typical applications, the voltage between the pins of Vin, GND, VA, and VB can reach 400V, and the insulation distance between the pins is

2〜3mm為宜，而G1 至VA、G2至VB、G3至GND、G4至GND 則電壓較低，為30V以下，引腳間絕緣距離以0. 5〜1mm 為宜，引腳本身所需寬度可設計在0. 5〜2nm，加上有些 場合需要集成溫度感測器等器件，至少需要預留2個引腳 以備用。這樣一來，功率模組之封裝寬度可在6cm以下為 » 較佳。 為進一步提升功率模組10性能，充分發掘潛力，功率模 組10當具備雙面散熱能力。雙面散熱能力的定義如下： 一足夠大空間中有均勻等速空氣流體，功率模組兩個表 099134616 表單編號A0101 第14頁/共47頁 0992060439-0 201216382 面均不給以額外散熱裝置，將功率模組至於足夠大空間 中，直接面對空氣，兩表面與空氣流體平行；兩表面散 熱能力相差不超過1倍，即任一表面散熱能力不低於兩表 面總和的1/3為佳。 在本實施例中，功率模組之兩個最大的主表面，一前表 面（封料16) A1和一後表面（散熱單元U及封料16)2〜3mm is preferred, and G1 to VA, G2 to VB, G3 to GND, G4 to GND, the voltage is lower, 30V or less, the insulation distance between the pins is 0. 5~1mm, the pin itself is required Width can be designed at 0. 5~2nm, plus some occasions need to integrate devices such as temperature sensors, at least 2 pins need to be reserved for use. In this way, the package width of the power module can be below 6cm. In order to further improve the performance of the power module 10 and fully exploit the potential, the power module 10 has a double-sided heat dissipation capability. The definition of double-sided heat dissipation capability is as follows: There is a uniform constant velocity air fluid in a large enough space, and the power module two tables 099134616 Form No. A0101 Page 14 / Total 47 Page 0992060439-0 201216382 No additional heat sink is provided. The power module is placed in a large enough space to directly face the air, and the two surfaces are parallel to the air fluid; the heat dissipation capability of the two surfaces is not more than 1 time, that is, the heat dissipation capability of any surface is not less than 1/3 of the sum of the two surfaces. . In this embodiment, the two largest major surfaces of the power module, a front surface (sealing material 16) A1 and a rear surface (heat sink unit U and sealing material 16)

，均能用來散熱。舉例來說：處於5m/s均衡風速平行風 散熱環境下，功率模組10之前表面A1和後表面八2，至少 8 0 %以上面積内，各點最大溫差，小於所有表面相對於工 作環境平均溫升的2〇%。這樣就可以大大增加有效散熱能 力，更容易在低損耗場合下自行散熱而無需額外散熱器 ，大大提升電源的内部空間利甩率，為了實現更好的散 熱特性，封料的厚度越薄越好’例如，封料1 6上表面與 晶片上表面鍵合導電材料間的最小間距可控制在〇. 5n 下為佳。此外’封料16平均厚度小於功率模組10之厚产 的60% ’並且小於3mm。這裏封料16平均厚度的定義如Can be used for heat dissipation. For example: in a 5m/s balanced wind speed parallel wind cooling environment, the front surface A1 and the rear surface of the power module 10 are at least 80%, and the maximum temperature difference between each point is less than the average of all surfaces relative to the working environment. 2% of the temperature rise. In this way, the effective heat dissipation capability can be greatly increased, and it is easier to dissipate heat in a low-loss occasion without an additional heat sink, thereby greatly improving the internal space profitability of the power supply. In order to achieve better heat dissipation characteristics, the thinner the sealing material, the better. For example, the minimum spacing between the upper surface of the sealing material 16 and the conductive material on the upper surface of the wafer can be controlled to be preferably 〇. 5n. In addition, the average thickness of the seal 16 is less than 60% of the thickness of the power module 10 and is less than 3 mm. Here the definition of the average thickness of the sealing material 16 is as follows

： I: I

:如圖1 ’功率模組所有封料16的總體積，除以由其主體 高度D與其寬度（圖未顯示&gt;形成的主面積，得到的即為 該功率模組封料16的平均厚度。 為方便實現雙面散熱，該種功率模組以如圖21所示安穿 方式應用於電源變換器為佳。即該種功率模組為直插型 封裝（如單列直插SIP或者雙列直插mp)，以方便兩個 主要表面與環境進行熱交換，更易於達成雙面散熱欵果 在風流速和風流溫度已先被設定的狀態下，決定表面熱: Figure 1 'The total volume of all the sealing materials 16 of the power module, divided by the main body height D and its width (the main area formed by the figure is not shown), the average thickness of the power module sealing material 16 is obtained. In order to facilitate double-sided heat dissipation, the power module is preferably applied to the power converter as shown in Fig. 21. That is, the power module is a direct-insertion type package (such as single-line in-line SIP or dual-column) In-line mp), in order to facilitate the heat exchange between the two main surfaces and the environment, it is easier to achieve double-sided heat dissipation. The surface heat is determined in the state where the wind flow rate and the air flow temperature have been set first.

交換能力的是表面平均溫度。平均溫度的定義如下：將 099134616 表單編號A0101 第K頁/共47 K °&quot;2〇6〇439-〇 201216382 表面分成若干個微等份，所有微等份的各自面積與各自 溫度相乘後，乘積全部相加在一起（即該表面溫度的積 分）；相加結果再除以該表面總面積，即為該表面平均 溫度。平均溫度越高，則散走的熱量就越高。而當需要 耗散的熱量一定時，則意味著平均溫度必須被決定在一 定範圍，此時如果希望表面熱分佈儘量均勻，則意味著 最高溫度點較低，從而更有利與得到低的功率器件結點 溫度，從而使器件可靠工作，並有更好性能。 另外，前述所指的一表面區域平均溫升的定義如下：按 上述表面平均溫度的定義得到該表面區域平均溫度；進 入該區域的流體溫度和出該表面的流體溫度相加除以2得 到該區域的流體平均溫度；該表面區域平均溫度減去該 區域流體平均溫度即為該表面區域平均溫升。 為減少使用時的機械應力，以使模組更容易設計得薄， 該功率模組也可以不必預設螺絲安裝孔。以進一步提升 空間利用率。若需安裝額外散熱器，可選擇無螺絲之解 決方案，如直接粘結等。 這樣一來，本實施例之功率模組10將大大提升該類型封 裝的量，也很符合目前和未來電源變換器的需求，並能 提升電源變換器的空間利用率，從而提升電源的功率密 度或者效率。 另外，請續參照圖1所示，第二功率器件14係藉由一導熱 絕緣材料層13設置於散熱單元11上，而非直接置於散熱 單元11。導熱絕緣材料層13可具有一絕緣層132，比如用 陶瓷片絕緣。為保證散熱能力，導熱絕緣材料層13在10x 10面積的上下熱阻應當小於3K/W。導熱絕緣材料層13比 099134616 表單編號A0101 第16頁/共47頁 0992060439-0 201216382 如為金屬基板或金屬化陶瓷基板，例如覆鋼陶瓷基板（ direct bonded C0pper, DBC)、金屬化陶瓷片上組 裝厚銅電路層、覆鋁陶瓷基板（direct b〇nded alu_ minum，DBA)、鋁基板、銅基板，或其他形式的高導熱 基板。於此導熱絕緣材料層13以抓(：基板為例，導熱絕緣 材料層13可包含一導熱層131、一絕緣層132及一線路層 133 ’其中導熱層131及線路層133可為銅，絕緣層132可 為陶究。 Ο 以常用的DBC基板為例，相對於現有技術，由於本發明可 以僅有一部分元器件（第二功率器件14)，安裝於導熱 絕緣材料層13上，因為搭載在其上的元器件數量減少， DBC基板面積也可以相應減小，如此可以降低封裝的材料 成本，提高封裝的經濟性能。並且，因為DBC基板面積的 減小，使得由於DBC基板和散熱單元11，封料16之間熱服 系數（coefficient of thermal expansion，CTE)The exchange capacity is the average surface temperature. The average temperature is defined as follows: 099134616 Form No. A0101 Page K/47 K °&quot;2〇6〇439-〇201216382 The surface is divided into several micro-aliquots, and the respective areas of all micro-aliquots are multiplied by their respective temperatures. The products are all added together (ie, the integral of the surface temperature); the addition result is divided by the total area of the surface, which is the average temperature of the surface. The higher the average temperature, the higher the heat dissipated. When the amount of heat that needs to be dissipated is certain, it means that the average temperature must be determined within a certain range. If the surface heat distribution is desired to be as uniform as possible, it means that the highest temperature point is lower, which is more advantageous and low power device. The junction temperature allows the device to operate reliably and with better performance. In addition, the above-mentioned average temperature rise of a surface region is defined as follows: the average temperature of the surface region is obtained according to the definition of the surface average temperature; the temperature of the fluid entering the region and the temperature of the fluid exiting the surface are divided by 2 to obtain the The average temperature of the fluid in the region; the average temperature of the surface region minus the average temperature of the fluid in the region is the average temperature rise of the surface region. In order to reduce the mechanical stress during use, so that the module can be designed to be thinner, the power module does not have to be preset with a screw mounting hole. To further improve space utilization. If you need to install additional heat sinks, you can choose a screwless solution, such as direct bonding. In this way, the power module 10 of the embodiment will greatly increase the amount of the package of the type, and is also in line with the current and future power converter requirements, and can improve the space utilization of the power converter, thereby increasing the power density of the power source. Or efficiency. In addition, referring to FIG. 1, the second power device 14 is disposed on the heat dissipation unit 11 by a layer of thermally conductive insulating material 13 instead of directly disposed on the heat dissipation unit 11. The thermally conductive insulating material layer 13 may have an insulating layer 132, such as insulated with a ceramic sheet. In order to ensure the heat dissipation capability, the thermal resistance of the thermally conductive insulating material layer 13 on the 10x10 area should be less than 3K/W. Thermally Conductive Insulation Material Layer 13 is more than 099134616 Form No. A0101 Page 16 / Total 47 Page 0992060439-0 201216382 For thick metal substrates or metallized ceramic substrates, such as direct bonded C0pper (DBC), metallized ceramic sheets Copper circuit layer, aluminum-clad ceramic substrate (direct b〇nded alu_minum, DBA), aluminum substrate, copper substrate, or other forms of high thermal conductivity substrate. The heat conductive insulating material layer 13 may be a heat conductive layer 131, an insulating layer 132, and a circuit layer 133. The heat conductive layer 131 and the circuit layer 133 may be copper and insulated. The layer 132 can be a ceramic. Ο Taking a conventional DBC substrate as an example, compared with the prior art, since the present invention can only have a part of components (the second power device 14), it is mounted on the thermal conductive material layer 13, because it is mounted on The number of components thereon is reduced, and the DBC substrate area can be correspondingly reduced, which can reduce the material cost of the package and improve the economic performance of the package. Moreover, because the DBC substrate area is reduced, due to the DBC substrate and the heat dissipation unit 11, Coefficient of thermal expansion (CTE) between seals 16

不一致而導致的撓曲（warpage)現象也會有所緩解。這 是因為由於不同材料CTE之間的失配而引起的撓曲通常隨 著尺寸的增加而加劇。如此，可以降低封裝體内的應力 ，從而進一步提高封裝體的可靠性。所以，由於部分器 件（第一功率器件12)已經直接與散熱單元u相連，相 對於現有技術，本發明之功率模組需要絕緣的材料明顯 減少，不盡降低了成本，更提升了熱管理能力，還更有 利於減少各材料CTE不匹配造成的可靠性設計難度。 在實際應用中，有一些對散熱要求非常苛刻的場合，還 可以選用導熱係數更高的（不低M1W/m κ，尤以大於 099134616 1. 2W/m. Κ乃至大於1. 8W/m. Κ為佳） 表單編號A0101 第17頁/共47頁 封料1 6，如此，可 0992060439-0 201216382 以增加封料一側的散熱能力，從而實現更優良的雙面散 熱，進一步提升整個封裝體的散熱能力。 圖3為該封裝類型的另一種擴展應用，可以將散熱單元表 面進行絕緣處理，使第一散熱單元11完全由封料16包覆 ，使其任一表面不外露、或是藉由一絕緣體使散熱單元 11與外界隔離，以便使用在希望絕緣的場合。為保證散 熱能力，該絕緣體或封料16在lOmmXlOmm面積的上下導 熱熱阻應當小於3K/W。 為使功率模組之封裝類型可以擴展到更多場合，其可以 被設計成雙排Pin。如圖4所示。當内部電路過於複雜， 以至於需要更多引腳，可以在前面提及的特徵上，再加 一排引腳P2。若此類封裝類型被應用在單排引腳P1就足 夠的場合，則圖中之上排引腳P2可以被設計成散熱用途 。例如，經由引腳P2的散熱總和大於等於功率模組10總 散熱量的5%。另外，為保證其能夠有效幫助散熱，實際 使用時，其與環境的平均溫差與前面所談及之前後兩表 面中平均溫度較高的一個與環境的平均溫差，溫差差異 不應超過50%。 眾所周知，電源内部，電壓跳變點越多，造成的電磁輻 射往往就越強，從而給電源電磁相容帶來難度。本發明 之散熱單元11，由於具備電特性，而其面積又相對較大 ，所以對電磁輻射帶來隱患。但如果優化設計該散熱單 元11的電特性，反而有機會將其設計成電磁輻射的遮罩 層，更有利於電磁相容。例如，可以將散熱單元11連接 到電壓靜地點，即：相對來講，該電位相對與大地，比 較安靜，少噪音。如圖2中的Vin和GND，相對與其他電壓 099134616 表單編號A0101 第18頁/共47頁 0992060439-0 201216382The warpage caused by inconsistency will also be alleviated. This is because the deflection due to mismatch between CTEs of different materials generally increases with increasing size. In this way, the stress in the package can be reduced, thereby further improving the reliability of the package. Therefore, since some devices (the first power device 12) have been directly connected to the heat dissipating unit u, compared with the prior art, the power module of the present invention needs to significantly reduce the insulation material, thereby reducing the cost and improving the thermal management capability. It is also more conducive to reducing the reliability of the design caused by the mismatch of CTE of each material. In practical applications, there are some occasions where the heat dissipation requirements are very demanding, and the thermal conductivity is also higher (not lower than M1W/m κ, especially greater than 099134616 1. 2W/m. Κ or even greater than 1. 8W/m. Κ is better) Form No. A0101 Page 17 / Total 47 sheets of sealing material 1, 6, so, 0992060439-0 201216382 to increase the heat dissipation capability of the sealing material side, thereby achieving better double-sided heat dissipation, further enhancing the entire package Cooling capacity. FIG. 3 is another extended application of the package type, in which the surface of the heat dissipation unit can be insulated, so that the first heat dissipation unit 11 is completely covered by the sealing material 16 so that either surface is not exposed or is insulated by an insulator. The heat dissipating unit 11 is isolated from the outside for use in applications where insulation is desired. In order to ensure the heat dissipation capability, the thermal conductivity of the insulator or seal 16 in the upper and lower areas of lOmmXlOmm should be less than 3K/W. In order to expand the package type of the power module to more occasions, it can be designed as a double row of Pin. As shown in Figure 4. When the internal circuitry is too complex to require more pins, a row of pins P2 can be added to the previously mentioned features. If such a package type is used in a single row of pins P1, the upper row of pins P2 can be designed for heat dissipation. For example, the sum of the heat dissipation through the pin P2 is greater than or equal to 5% of the total heat dissipation of the power module 10. In addition, in order to ensure that it can effectively help to dissipate heat, the average temperature difference between the environment and the environment is higher than the average temperature difference between the two surfaces before and after the actual temperature. The difference in temperature difference should not exceed 50%. It is well known that the more voltage jump points inside the power supply, the stronger the electromagnetic radiation is, which makes the electromagnetic compatibility of the power supply difficult. Since the heat dissipating unit 11 of the present invention has electrical characteristics and a relatively large area, it causes a hidden danger to electromagnetic radiation. However, if the electrical characteristics of the heat dissipating unit 11 are optimized, the organic layer will be designed as a mask layer for electromagnetic radiation, which is more advantageous for electromagnetic compatibility. For example, the heat sink unit 11 can be connected to a voltage static location, i.e., relatively speaking, the potential is relatively quiet and less noisy relative to the earth. As shown in Figure 2, Vin and GND, relative to other voltages 099134616 Form No. A0101 Page 18 of 47 0992060439-0 201216382

點，就是比較平靜的。將散熱單元11設計成Vin或者GND ，更有利於電磁相容的。但實際操作中，為了便於實現 ’需要功率器件與散熱單元11連接的那個面只有一個電 極’在本實施例中為第一功率器件12。比如M0SFET，其 漏極（Drain)與源極（Source)間承受的電壓往往高 於門極（Gate)與源極（Source)間的電壓，所以，其 器件的源極和門極往往共用一面，而漏極往往獨佔一面 。這樣一來，將漏極作為靜地點的功率器件（第一功率 器件12)，直接與散熱單元11連接，既可以更好地進行 電磁相容，又方便制餐。 如圖5，可以將背面的散熱單元丨丨拓寬/長，甚至折彎， 使其部分超過封料16包覆的部分以擴大表面積。超出 封料16包覆的散熱單元11的兩面均可以實現和環境的熱 交換，因此，可以進一步加強功率模組以“散熱性能。 Ο 如圖6，在某些場合下，封裝體内部不僅僅需要搭栽一此 功率半導體器件，還需要集成一些控制功能》而控制線 路通常比較複雜，因此需要使用佈線密度更高的基板， 如PCB板或者ic。在此態樣中，可以將搭載控制線路的控 制器件18，例如高密度佈線板或者控制iC也封裝至封裝 體内。 如圖7，控制器件18可以是導熱係數較低，但是佈線密度 較高的高密度基板。以便可以集成更多的控制功能。护； 制器件18通常耐溫等級較功率器件的耐溫等級相比較低 ，因此’在控制器件18和散熱單元11之間放置—個絕熱 層（熱導率通常低於K) IL。如此，可以降低# 制器件18，以及其上所搭載器件的溫度。 099134616 表單編號A0101 第19頁/共47頁 0992060439-0 201216382 如圖8，上面所述散熱單元11，不限於一整塊，其上可以 根據需要做進一步的分割，以形成一些電路圖形，即散 熱單元11也可以具有多個電極。如此可以進一步增加功 率模組設計的靈活性。 功率模組10由於將多個器件集成在一起，相比分立器件 ，其電流流通回路被大大減少，從而降低了回路電感， 即減少了損耗，又降低了電壓嗓音。但仍可以繼續被優 化。如圖9，以所提及全橋電路為例，增加集成一高頻電 容器C至功率模組10内部，以進一步減少回路，降低回路 電感量。 通常電源變換器為了安全可靠，會即時監測功率半導體 的溫度狀態，若溫度過高或者升溫過快，則說明電路有 危險，可以提前採取預防動作，如關閉電源等。分立器 件的溫度檢測，只能在其外部增加溫度感測器，所以， 無法及時反映内部溫度狀態，且溫度感測器的安裝也較 複雜。所以，功率模組中，還可以集成溫度感測器，既 提升了溫度監測效果，又簡化了使用。 如圖10所示，此態樣之功率模組更包含一第二散熱單元 (heat sink) 11a，其設置於第二功率器件14與導熱絕 緣材料層13之間。由於功率器件在工作過程中，例如會 經歷超過正常工作電流數倍以上的暫態衝擊，故，藉由 第二散熱單元11a，可以在不增加導熱絕緣材料層13 ( DBC基板）面積的情況下，改善搭載至DBC基板上需要承 受熱衝擊的元件的抗熱衝擊能力。另外，引線框架15係 延伸與導熱絕緣材料層13之線路層133連接。Point is calmer. Designing the heat sink unit 11 to be Vin or GND is more advantageous for electromagnetic compatibility. However, in practice, in order to facilitate the realization of the side where the power device is connected to the heat dissipating unit 11, only one electrode 'in this embodiment is the first power device 12. For example, the M0SFET has a voltage between the drain and the source that is often higher than the voltage between the gate and the source. Therefore, the source and the gate of the device often share one side. And the drain tends to be exclusive. In this way, the power device (the first power device 12) having the drain as a static place is directly connected to the heat dissipating unit 11, which can better perform electromagnetic compatibility and facilitate meal making. As shown in Fig. 5, the heat dissipating unit 背面 on the back surface can be widened/long, or even bent, so that a portion thereof exceeds the portion covered by the sealing material 16 to enlarge the surface area. The heat exchange between the two sides of the heat dissipating unit 11 covered by the sealing material 16 can achieve heat exchange with the environment. Therefore, the power module can be further enhanced to "heat dissipation performance." As shown in Fig. 6, in some cases, the inside of the package is not only It is necessary to build a power semiconductor device, and some control functions need to be integrated. The control circuit is usually complicated, so it is necessary to use a substrate with a higher wiring density, such as a PCB board or ic. In this aspect, the control line can be mounted. The control device 18, such as a high-density wiring board or control iC, is also packaged into the package. As shown in Fig. 7, the control device 18 can be a high-density substrate having a low thermal conductivity but a high wiring density so that more can be integrated. The control function 18 is generally lower in temperature resistance than the temperature rating of the power device, so 'a thermal insulation layer is placed between the control device 18 and the heat dissipation unit 11 (thermal conductivity is usually lower than K) IL In this way, the temperature of the device 18 and the device mounted thereon can be reduced. 099134616 Form No. A0101 Page 19 of 47 0992060439-0 201216382 As shown in FIG. 8, the heat dissipating unit 11 is not limited to a whole block, and may be further divided as needed to form some circuit patterns, that is, the heat dissipating unit 11 may also have a plurality of electrodes. The flexibility of the group design. Since the power module 10 integrates multiple devices, the current circulation loop is greatly reduced compared to the discrete device, thereby reducing the loop inductance, that is, reducing the loss and reducing the voltage noise. It can still be optimized. As shown in Figure 9, with the mentioned full-bridge circuit as an example, the integration of a high-frequency capacitor C into the power module 10 is added to further reduce the loop and reduce the loop inductance. Usually the power converter is safe. Reliable, it will monitor the temperature status of the power semiconductor in real time. If the temperature is too high or the temperature rises too fast, the circuit is dangerous, and preventive action can be taken in advance, such as turning off the power supply. The temperature detection of the discrete device can only increase the temperature outside it. The sensor, therefore, cannot reflect the internal temperature state in time, and the installation of the temperature sensor is also complicated. Therefore, in the power module, the temperature sensor can also be integrated, which not only improves the temperature monitoring effect, but also simplifies the use. As shown in Fig. 10, the power module of this aspect further comprises a second heat sink unit (heat sink) 11a, which is disposed between the second power device 14 and the layer of thermally conductive insulating material 13. Since the power device is subjected to a transient shock that exceeds a normal operating current several times or more during operation, for example, by the second heat dissipation The unit 11a can improve the thermal shock resistance of the component to be subjected to thermal shock on the DBC substrate without increasing the area of the thermally conductive insulating material layer 13 (DBC substrate). In addition, the lead frame 15 is extended and thermally conductive. The circuit layer 133 of layer 13 is connected.

如圖11所示，為了進一步改善導熱絕緣材料層13 (以DBC 099134616 表單編號A0101 第20頁/共47頁 0992060439-0 201216382As shown in Figure 11, in order to further improve the layer of thermally conductive insulating material 13 (to DBC 099134616 Form No. A0101 Page 20 / Total 47 Page 0992060439-0 201216382

基板為例）上發熱I較大的元件（例如第二功率器件Η )的抗熱衝擊的性能，以及進一步改善DBC基板上線路的 承載電流的能力（因為’ DBC基板上銅層的厚度受dbc成 蜜工藝的影響’一般厚度不高於0. 5mm，通常不高於 〇. 3mm)，降低電流傳導阻抗，更可以將引線框架15的面 積增加，通過一導電材料鍵合至DBC基板的線路層上。利 用此結構開發的一款功率模組的實物照片見圖12 (未經 封料包覆）。其中導熱絕緣材料層13通過釺焊的方式焊 接至第一散熱單元11上，而引線框架15同樣通過釺焊的 方式和導熱絕緣材料層13的線路層實現電氣與機械連接 。圖12所示的功率模組1〇所使用的DBC基板，其線路層厚 度為0.3mm，而引線框架15的厚度為〇 5mm.，因此採用 此結構的傳導電阻和直接將晶片鍵合在DBC基板線路層上 相比降低60%以上，如此可以有效降低模组產熱量，從而 提高模組的電性能，改善模組的散熱性能β 如圖13所示，在功率模組1〇内除了使用導熱能力較好的 DBC基板以外，也可以使用類俾銅基板i3a等導熱能力較 好的基板。一般銅墓板的結構為，在一較厚的鋼襯底上 ，生成絕緣層和薄銅線路層。而且絕緣層和薄銅線路層 的層數不以一層為限，可以是多層。在某些場合下可以 實現更高的佈線密度。 一般而言，第一功率器件與第二功率器件皆由導線（The substrate is exemplified by the thermal shock resistance of the element having a large heat generation I (for example, the second power device Η), and the ability to further improve the current carrying current of the line on the DBC substrate (because the thickness of the copper layer on the DBC substrate is affected by the dbc) The influence of the honey-forming process 'general thickness is not higher than 0.5 mm, usually not higher than 〇. 3 mm), the current conduction resistance is lowered, and the area of the lead frame 15 can be increased, and the wire is bonded to the DBC substrate through a conductive material. On the floor. A physical photograph of a power module developed using this structure is shown in Figure 12 (unsealed). The thermally conductive insulating material layer 13 is soldered to the first heat dissipating unit 11 by means of soldering, and the lead frame 15 is also electrically and mechanically connected by means of soldering and the wiring layer of the thermally conductive insulating material layer 13. The DBC substrate used in the power module 1 shown in FIG. 12 has a wiring layer thickness of 0.3 mm and the lead frame 15 has a thickness of 〇5 mm. Therefore, the conduction resistance of the structure is used and the wafer is directly bonded to the DBC. The substrate layer is reduced by more than 60%, which can effectively reduce the heat generation of the module, thereby improving the electrical performance of the module and improving the heat dissipation performance of the module. As shown in Fig. 13, in addition to the power module 1 In addition to the DBC substrate having a good thermal conductivity, a substrate having a good thermal conductivity such as a beryllium-like copper substrate i3a may be used. A typical copper tomb is constructed to form an insulating layer and a thin copper circuit layer on a thick steel substrate. Further, the number of layers of the insulating layer and the thin copper wiring layer is not limited to one layer, and may be a plurality of layers. Higher wiring densities can be achieved in some cases. In general, the first power device and the second power device are both wires (

Wire bonding)來傳輸訊號，由於導線往往是用鋁導線 (A1 wire)來完成，内阻很大。用金導線（Au “Μ) ，則成本太高。雖然最近工藝有銅導線（Cu wire)出現 ，但仍舊内阻很大。如圖14所示，為進一步降低封裝内 099134616 表單编號A0101 第21頁/共4γ頁 0992060439-0 201216382 阻造成的損耗，本發明可以用導線接合 bond)工藝’如銅片取代導線接合來實現電流傳遞大 大降低了封裝内阻，且成本也不會太高。本態樣係藉由 引線框架1 5延伸連結於第一功率器件12及第二功率器件 14之至少一而取代導線。 圖15所示為一進一步改善熱傳遞能力的方案。由於本發 明提及之功率模組，往往是有些器件（例如第—功率器 件12)直接與散熱單元丨丨相連以提升電性能、熱性能， 而有些器件（例如第二功率时14)與散鮮训之間 則有絕緣元件（例如具有絕緣層之導熱絕緣材料層13) ，從而導致整個模組中封料16的厚度不均，也就是說， 局部封料16與器件的距離會比較厚，使封料16的溫度不 均勻，從而景；&gt; 響了封料16表面的散熱能力。圖15中在 封料16較厚的地方增加熱良導體之一第三散熱單元丨丨^^， 其係設置於第一散熱單元11的第一區，從均句化封料16 至器件的厚度’而改善散熱能力。. 另外，如圖18所示，第三散熱單元llb係穿出封料16，並 具有一彎折。第三散熱單元nbr|封料16而可作為引腳 Pin、或是單純散熱、或是部分作為引腳部分用來散熱。 第二散熱單元lib藉由彎折可減少功率模組1〇直立時的尺 寸，且從封裝元件到頂點總長度不應長於2〇mm，尤以不 長於1 Omm為佳.。 實際應用中，若需進一步擴大散熱能力，可以通過圖19 的方式達成。即在功率模組1〇的第三散熱單元Ub上再安 裝一第四散熱單元11c。第四散熱單元lie可藉由焊接、 粘結等方式與第三散熱單元llb連結。由於安裝簡單第四 099134616 0992060439-0 表單編號A0101 第22頁/共47頁 201216382 散熱單元lie的形狀和位置可以不受限定。但實際效果上 ，以保留功率模組10自有表面散熱能力為佳。即，如圖 19，在第四散熱單元lie與功率模組10前表面A1之間保 留一空隙，使得風流可以該空隙中流動，從而使功率模 組前表面和第四散熱單元lie下表面（靠近前表面A1之表 面）均能發揮一定散熱功能。為使該空隙中的風流能夠 達到相當的程度，該空隙厚度可大於1mm，尤以大於2mm 為佳。 另外，如圖20所示，功率模組10更包含一第三功率器件 19a、一第四功率器件19b、一引線框架15以及一封料16 。第三功率器件19a設置於第二功率器件14之上，第四功 率器件19b設置於第一功率器件12之上，且第一功率器件 12及第二功率器件14設置於散熱單元11上。引線框架15 位於第一功率器件12與第四功率器件19b之間，並位於第 二功率器件14與第三功率器件19a之間，並位於第三功率 器件19a及第四功率器件19b之上。封料16係包覆該等功 率器件12、14、19a、19b及引線框架15之至少一部分。 藉由將複數功率器件堆疊在一起，既可以減少連接線減 低通態損耗，又可以減少高頻阻抗，降低開關損耗，進 一步提升電源性能。而且對於橋式電路，包括半橋、全 橋、三相橋等，堆疊後就無需原先用於絕緣的部分材料 ，既可節約成本，又可提升空間利用率，進一步提升電 源變換器性能。 為了更好地解釋本發明的意義，進一步借助全橋電路來 進行說明，如前所述，圖2為全橋電路的拓撲圖，圖16和 圖1 7A至1 7D分別為其功率模組内部結構和三維示意圖。 099134616 表單編號A0101 第23頁/共47頁 0992060439-0 201216382 其中，圖17A為功率模組10的正面示意圖，圖17B為功率 模組10的背面示意圖，圖17C為功率模組10脫去封料16 的正面示意圖，圖17D為功率模組10脫去封料16的背面示 意圖。 雖然上述實施例係以一第一功率器件1 2及一第二功率器 件14為例作說明，但並非具限制性，且其中第一功率器 件12所代表的意義為其設置於散熱單元11上，而第二功 率器件14所代表的意義為其藉由一導熱絕緣材料層13設 置於散熱單元11上。以下係以二個第一功率器件S1及S2 以及二個第二功率器件S3及S4作說明。 如圖2所示，全橋電路包括4個開關器件S1〜S4，這裏以 金屬氧化物半導體電晶體為例。這四個開關器件組成兩 組導電橋臂：S1和S4組成一組，S2和S3組成一組橋臂； 橋臂上管開關器件S1和S2的漏極端共同連接在電壓高電 位點Vin (在D2D應用時，電氣端Vin為直流輸入端，是 電壓波形為一個穩定的直流或者帶有很小紋波的直流） ，橋臂下管開關器件S3和S4的Source端共同連接在電壓 的低電位點GND ;而單一橋臂上管的源極和下管的漏極相 連接，如S1和S4橋臂連接於VA，S2和S3的橋臂連接於VB ，其工作的基本原理是橋臂的上下管互補導通，如S1開 通，S4關斷；S1關斷，S4開通，在開關狀態轉換過程存 在短暫時間都關斷的過程。這樣，D2D的應用場合下，輸 入端Vin-GND之間為直流，而橋臂中間連接點VA, VB的電 壓則是開關次的跳變，幅值為0與Vin。 目前大功率電晶體最典型的電極引出方式為，晶片的背 面為漏極，正面分佈兩個電極：源極和閘極，其中閘極 099134616 表單編號A0101 第24頁/共47頁 0992060439-0 201216382 的尺寸較小，例如1 mm* 1 mm。晶片背面的漏極通常預先進 行可釺焊處理，而正面的源極和閘極往往為鋁金屬化電 極，可以通過銘/金導線接合（wire bonding)的方式 實現和週邊電路的連接。由於開關器件S1和S2的漏極連 接於共同的直流電位點Vin，因此，可以將其直接釺焊至 散熱單元11上，而Vin和外界電連接的pin也可以直接釺 焊至散熱單元11上，從而利用該導電極佳的散熱單元11 導電，降低電損耗，減少封裝體的熱量產生。如此，可 以獲得最佳的熱，電性能。而現有的功率模組，如前述 習知的做法為，將所有四顆功率電晶體安裝至DBC基板上 ，隨後，所有功率電晶體和引線框架的電連接均靠導線 接合的方式來實現。如上文所討論的一樣，現有技術的 種種缺陷（散熱差，電性能差，價格高，可靠性差等等 )相比之下一目了然。 本發明在此處的應用更具降低EMI的效果，前面對全橋電 路的基本工作原理分析看。散熱單元11連接於直流輸入 端Vin，為很好的靜態電位點，而橋臂中間連接點VA，VB 則為電壓跳變點，大片的散熱單元11可以有效阻斷跳變 信號的傳遞。如此，可以有效減小跳變點對週邊電路的 幹擾，減小測試的EM I。 如前所述，為了具備更好的EMC特性和散熱性能，將全橋 模組中的開關器件S3、S4置於絕緣層（即導.熱絕緣材料 層具有之絕緣層）之上，將開關器件SI、S2直接置於散 熱單元11之上；為了方便生產，並減少生產工差造成的 空間浪費，開關器件S3、S4置於相連的絕緣層之上；為 減少回路電感和方便使用，將S2置於S3外側，將S1置於 099134616 表單編號A0101 第25頁/共47頁 0992060439-0 201216382 S4外側。也就是說，對於圖2所示的全橋電路來講，模組 内部器件按S2-S3-S4-S1或者S1-S4-S3-S2的順序排布 ，性能更為優秀。 另外，在以上的實施例中，電源變換器可以包含至少兩 塊所述的功率模組，該兩塊功率模組可用同個封料模具 進行封料，以降低封料模具成本。 另外，導線架也可以集成一個散熱單元，而這個散熱單 元也可以被作為安裝元器件的載板。在此所指的散熱單 元，是定義為連接體被封裝材料覆蓋的部分。 以下說明本實施例之功率模組的製造流程，於此，導熱 絕緣材料層係以覆銅陶瓷基板為例，另外，此功率模組 除了搭載功率器件（半導體晶片）外還集成了一些被動 元件，如電阻和電容，且在引線框架其中一些引腳上還 搭載了 一個溫度測量電阻，以用作模組過溫保護之用。 具體的製作流程如下：先在散熱單元11上組裝導熱絕緣 材料層13的位置以及和引線框架15連接的位置塗上錫膏 ，同樣將導熱絕緣材料層1 3上需要和引線框架1 5組裝的 位置塗上錫膏，隨後將散熱單元11、導熱絕緣材料層13 和引線框架1 5按照設定的裝配關係置於一治具中（Assembly) ; 然後過回 流焊爐 （Reflow) 使其焊接在一起 ，由此這三個部件形成一個整體，在隨後植晶製程中可 以利用引線框架15進行傳輸與定位；清洗（Flux Cleaning)後，進行植晶安裝所需的半導體器件（如電 晶體及二極體），此處需要著重強調的是部分功率器件 放置在散熱單元11上（如第一功率器件12)，另外一部 分功率晶片放置在導熱絕緣材料層13上（如第二功率器 099134616 表單編號A0101 第26頁/共47頁 0992060439-0 201216382 件14);在使用單一功能的植晶機時，由於其不具備抓 取表面黏著（SMT )器件的能力，因此，一些電阻、電容 等器件還需要進行SMT的操作，即：點錫膏（Solder Dispense)後，放置其他元器件（SMT);由於所用的 功率器件的晶片尺寸較大，採用錫膏（solder paste ) 進行ref low時有焊接層的氣孔率較高而帶來工藝性、可 靠性不佳的疑慮，此處採用真空回焊（Vacuum Reflow )使元件和散熱單元11、導熱絕緣材料層13、引線框架 15焊接在一起；清洗（Flux Cleaning)後，進行打線 〇 接合（Wire bond)作業；塑封（Molding)後即完成 主要流程。 於一些在植晶製程時無需使用引線框架15進行定位的 • 應用下，有機會進一步簡化工藝流程。首先將散熱單元 11、導熱絕緣材料層13、引線框架15上需要的位置施加 錫膏；隨後將所需的元件（功率晶片以及被動SMT元件） 分別放置於需要的位置上，這步驟可以通過泛用較強的 機台（如集成植晶和表面黏著技術功能的機台）上而一 〇 ^ 站式實現，也可以在多個機臺上實現；隨後將放置有元 件的散熱單元11、導熱絕緣材料層13、引線框架15按照 設定的裝配關係放置於一治具中，完成assembly ;隨後 真空r e f 1 ow ;後續的工藝和上述的工藝流程相同。如此 ，可以減少r e f 1 ow的次數以及相應的清洗等流程，由於 ref low次數的減少對於提高模組的可靠性也有一定的好 處。 综上，通過本發明所揭露的，用以提升電源變換器功率 密度或者效率的封裝方法和結構，可以獲得與現有技術 099134616 表單編號A0101 第27頁/共47頁 0992060439-0 201216382 相比，更佳的熱性能，電性能，經濟性能，EMC性能與更 高的可靠性。其内部空間利用率很高，使用方便，非常 有利於提高變換器功率密度或者效率。而本發明給出的 具體功率模組具體實施，也非常可行有效。本發明非常 適合用以提升電源變換器的整體性能和性價比。 以上所述僅為舉例性，而非為限制性者。任何未脫離本 發明之精神與範疇，而對其進行之等效修改或變更，均 應包含於後附之申請專利範圍中。 【圖式簡單說明】 [0005] [0006] 圖1為本發明較佳實施例之一種功率模組的示意圖； 圖2及圖9顯示本發明較佳實施例之一種功率模組應用之 全橋電路的不同態樣；以及 圖3至圖8以及圖10至圖22為本發明較佳實施例之功率模 組不同態樣的示意圖。 【主要元件符號說明】 1 〇 :功率模組 11、11a、lib、11c :散熱單元 111 :第一區 112 :第二區 12 :第一功率器件 13 :導熱絕緣材料層 131 :導熱層 132 :絕緣層 133 :線路層 13a :銅基板 099134616 表單編號A0101 第28頁/共47頁 0992060439-0 201216382 1 4 :第二功率器件 15 :引線框架 16 :封料 17 :鍵接材料層 18 :控制器件Wire bonding) is used to transmit signals. Since the wires are often made of aluminum wires (A1 wire), the internal resistance is large. The use of gold wire (Au "Μ", the cost is too high. Although the recent process has a copper wire (Cu wire), but the internal resistance is still very large. As shown in Figure 14, to further reduce the package 099134616 Form No. A0101 Page 21 of 4 γ page 0992060439-0 201216382 The loss caused by the resistance, the present invention can be used to wire bond technology) such as copper instead of wire bonding to achieve current transfer greatly reduces the internal resistance of the package, and the cost is not too high. This aspect replaces the wire by extending the lead frame 15 to at least one of the first power device 12 and the second power device 14. Figure 15 shows a solution for further improving heat transfer capability. Power modules, often some devices (such as the first - power device 12) are directly connected to the heat sink unit to improve electrical and thermal performance, while some devices (such as the second power 14) and the fresh training between An insulating element (for example, a layer of thermally conductive insulating material 13 having an insulating layer), resulting in uneven thickness of the sealing material 16 in the entire module, that is, the distance between the partial sealing material 16 and the device is relatively thick. The temperature of the sealing material 16 is made uneven, thereby illuminating the surface; &gt; dampens the heat dissipation capability of the surface of the sealing material 16. In Fig. 15, in the thicker portion of the sealing material 16, a third heat dissipating unit 热^^ is added. It is disposed in the first region of the first heat dissipating unit 11 to improve the heat dissipation capability from the uniform sealing material 16 to the thickness of the device. In addition, as shown in FIG. 18, the third heat dissipating unit 11b passes through the sealing material. 16, and has a bend. The third heat-dissipating unit nbr|seal material 16 can be used as pin Pin, or simply heat-dissipating, or partially used as a pin portion for heat dissipation. The second heat-dissipating unit lib can be bent by Reduce the size of the power module 1 erect, and the total length from the package component to the apex should not be longer than 2 〇 mm, especially not longer than 1 Omm. In practical applications, if you need to further expand the heat dissipation capacity, you can The method of 19 is completed, that is, a fourth heat dissipating unit 11c is further mounted on the third heat dissipating unit Ub of the power module 1A. The fourth heat dissipating unit lie can be coupled to the third heat dissipating unit 11b by soldering, bonding or the like. Due to the simple installation of the fourth 099134616 0992060439-0 form number A0 101 Page 22 of 47 201216382 The shape and position of the heat dissipation unit lie can be unrestricted. However, in actual effect, it is better to retain the surface heat dissipation capability of the power module 10. That is, as shown in Fig. 19, in the fourth heat dissipation A gap is left between the unit lie and the front surface A1 of the power module 10, so that the wind flow can flow in the gap, so that the front surface of the power module and the lower surface of the fourth heat dissipation unit lie (near the surface of the front surface A1) can be utilized. A certain heat dissipation function. In order to achieve a considerable degree of wind flow in the gap, the gap thickness may be greater than 1 mm, especially greater than 2 mm. In addition, as shown in FIG. 20, the power module 10 further includes a third power device 19a, a fourth power device 19b, a lead frame 15, and a material 16. The third power device 19a is disposed on the second power device 14, the fourth power device 19b is disposed on the first power device 12, and the first power device 12 and the second power device 14 are disposed on the heat dissipation unit 11. The lead frame 15 is located between the first power device 12 and the fourth power device 19b and between the second power device 14 and the third power device 19a and is located above the third power device 19a and the fourth power device 19b. The encapsulant 16 encloses at least a portion of the power devices 12, 14, 19a, 19b and the lead frame 15. By stacking multiple power devices together, the connection line can be reduced to reduce the on-state loss, the high-frequency impedance can be reduced, the switching loss can be reduced, and the power supply performance can be further improved. Moreover, for the bridge circuit, including the half bridge, the full bridge, the three-phase bridge, etc., after stacking, some materials originally used for insulation are not needed, which can save cost, improve space utilization, and further improve the performance of the power converter. In order to better explain the meaning of the present invention, further description is made by means of a full bridge circuit. As described above, FIG. 2 is a topology diagram of a full bridge circuit, and FIG. 16 and FIGS. 17A to 17D are respectively internal to the power module thereof. Structure and three-dimensional schematic. 099134616 Form No. A0101 Page 23 / Total 47 Page 0992060439-0 201216382 Wherein, FIG. 17A is a front view of the power module 10, FIG. 17B is a rear view of the power module 10, and FIG. 17C is a power module 10 with a sealing material removed. 16 is a front schematic view, and FIG. 17D is a schematic view of the back of the power module 10 with the sealing material 16 removed. Although the above embodiment is described by taking a first power device 12 and a second power device 14 as an example, it is not limited, and the meaning of the first power device 12 is that it is disposed on the heat dissipation unit 11 . The meaning of the second power device 14 is that it is disposed on the heat dissipation unit 11 by a layer of thermally conductive insulating material 13. The following description will be made with two first power devices S1 and S2 and two second power devices S3 and S4. As shown in Fig. 2, the full bridge circuit includes four switching devices S1 to S4, here taking a metal oxide semiconductor transistor as an example. The four switching devices form two sets of conductive bridge arms: S1 and S4 form a group, and S2 and S3 form a group of bridge arms; the drain terminals of the upper tube switching devices S1 and S2 of the bridge arms are connected together at a voltage high potential point Vin (in In D2D application, the electrical terminal Vin is the DC input terminal, and the voltage waveform is a stable DC or a DC with a small ripple. The source terminals of the bridge lower tube switching devices S3 and S4 are connected together at the low potential point of the voltage. GND; the source of the upper arm of the single bridge arm is connected to the drain of the lower tube. For example, the S1 and S4 bridge arms are connected to the VA, and the bridge arms of the S2 and S3 are connected to the VB. The basic principle of the operation is the upper and lower sides of the bridge arm. The tube is complementarily turned on, such as S1 is turned on, S4 is turned off; S1 is turned off, and S4 is turned on, and there is a process in which the switching state transition process is turned off for a short time. Thus, in the D2D application, the input terminal Vin-GND is DC, and the bridge arm intermediate connection point VA, VB voltage is the switching times of the transition, the amplitude is 0 and Vin. At present, the most typical electrode extraction method for high-power transistors is that the back side of the wafer is the drain, and the two electrodes are distributed on the front side: the source and the gate, wherein the gate is 099134616. Form No. A0101 Page 24 / Total 47 Page 0992060439-0 201216382 The size is small, for example 1 mm* 1 mm. The drain on the back side of the wafer is typically pre-advanced for soldering, while the source and gate on the front side are often aluminum metallized electrodes that can be connected to the surrounding circuitry by wire bonding. Since the drains of the switching devices S1 and S2 are connected to the common DC potential point Vin, they can be directly soldered to the heat dissipation unit 11, and the pins electrically connected to the outside and the external electrodes can be directly soldered to the heat dissipation unit 11. Therefore, the heat dissipation unit 11 of the conductive electrode is used to conduct electricity, reduce electrical loss, and reduce heat generation of the package. In this way, the best thermal and electrical properties can be obtained. In the conventional power module, as described above, all four power transistors are mounted on the DBC substrate, and then the electrical connections of all the power transistors and the lead frame are realized by wire bonding. As discussed above, the various deficiencies of the prior art (poor heat dissipation, poor electrical performance, high price, poor reliability, etc.) are relatively straightforward. The application of the present invention here has a more EMI-reducing effect, and the basic working principle of the full-bridge circuit is analyzed in the foregoing. The heat dissipating unit 11 is connected to the DC input terminal Vin, which is a good static potential point, and the intermediate connection points VA and VB of the bridge arm are voltage jump points, and the large heat dissipating unit 11 can effectively block the transmission of the hopping signal. In this way, the interference of the trip point to the peripheral circuit can be effectively reduced, and the EM I of the test can be reduced. As mentioned above, in order to have better EMC characteristics and heat dissipation performance, the switching devices S3 and S4 in the full-bridge module are placed on the insulating layer (ie, the insulating layer of the conductive and thermal insulating material layer), and the switch is turned on. The devices SI and S2 are directly placed on the heat dissipating unit 11; in order to facilitate production and reduce space waste caused by production work, the switching devices S3 and S4 are placed on the connected insulating layer; to reduce loop inductance and convenient use, S2 is placed outside S3, and S1 is placed outside 099134616 Form No. A0101 Page 25/47 Page 0992060439-0 201216382 S4. That is to say, for the full-bridge circuit shown in Fig. 2, the internal components of the module are arranged in the order of S2-S3-S4-S1 or S1-S4-S3-S2, and the performance is more excellent. In addition, in the above embodiments, the power converter may include at least two of the power modules, and the two power modules may be sealed by the same sealing mold to reduce the cost of the sealing mold. In addition, the lead frame can also be integrated with a heat sink unit, and this heat sink unit can also be used as a carrier for mounting components. The heat dissipating unit referred to herein is defined as a portion of the connecting body covered by the encapsulating material. The manufacturing process of the power module of the present embodiment is described below. Here, the thermal conductive insulating material layer is exemplified by a copper-clad ceramic substrate. In addition, the power module integrates some passive components in addition to the power device (semiconductor wafer). For example, resistors and capacitors, and a temperature measuring resistor on some of the leads of the lead frame is used for module over temperature protection. The specific manufacturing process is as follows: firstly, the position of the heat conductive insulating material layer 13 is assembled on the heat dissipating unit 11, and the solder paste is applied to the position where the lead frame 15 is connected, and the heat conductive insulating material layer 13 is also required to be assembled with the lead frame 15. The position is coated with solder paste, and then the heat dissipating unit 11, the heat conductive insulating material layer 13 and the lead frame 15 are placed in a fixture according to a set assembly relationship; and then soldered together through a reflow furnace (Reflow) Thus, the three components are formed in one piece, and the lead frame 15 can be used for transmission and positioning in the subsequent crystallization process; after cleaning (Flux Cleaning), the semiconductor device (such as a transistor and a diode) required for the lithographic mounting is performed. Here, it is emphasized that part of the power device is placed on the heat dissipating unit 11 (such as the first power device 12), and another part of the power chip is placed on the thermally conductive insulating material layer 13 (such as the second power unit 099134616, form number A0101). Page 26 of 47 0992060439-0 201216382 piece 14); when using a single function crystallizer, because it does not have a grip surface adhesion (SMT) device The ability, therefore, some resistors, capacitors and other devices also need to perform SMT operation, namely: after placing the solder paste (Solder Dispense), placing other components (SMT); due to the large size of the power device used, the use of tin Solder paste When ref low is performed, there is a problem that the porosity of the solder layer is high and the processability and reliability are poor. Here, vacuum reflow is used to make the component and the heat dissipating unit 11, and the heat conductive insulating material. The layer 13 and the lead frame 15 are welded together; after the cleaning (Flux Cleaning), the wire bond is performed; after the molding, the main process is completed. In applications where there is no need to use the lead frame 15 for positioning during the lithography process, there is an opportunity to further simplify the process. First, the solder paste is applied to the required positions on the heat dissipating unit 11, the thermally conductive insulating material layer 13, and the lead frame 15; then the required components (power chips and passive SMT components) are respectively placed at desired positions, and this step can be performed by pan It can be realized on a plurality of machines by using a strong machine (such as a machine with integrated crystallization and surface adhesion technology), and then it can be placed on multiple machines; The insulating material layer 13 and the lead frame 15 are placed in a jig according to a set assembly relationship to complete the assembly; then the vacuum ref 1 ow; the subsequent process is the same as the above process flow. In this way, the number of times of r e f 1 ow and the corresponding cleaning process can be reduced, and the reduction of the number of ref lows also has certain advantages for improving the reliability of the module. In summary, the packaging method and structure for improving the power density or efficiency of the power converter disclosed by the present invention can be obtained compared with the prior art 099134616 Form No. A0101, page 27/47 pages 0992060439-0 201216382, Good thermal performance, electrical performance, economic performance, EMC performance and higher reliability. Its internal space utilization is very high and easy to use, which is very beneficial to improve converter power density or efficiency. The specific implementation of the specific power module given by the present invention is also very feasible and effective. The invention is well suited for improving the overall performance and cost performance of a power converter. The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS [0006] FIG. 1 is a schematic diagram of a power module according to a preferred embodiment of the present invention; FIG. 2 and FIG. 9 show a full bridge of a power module application according to a preferred embodiment of the present invention. Different aspects of the circuit; and Figures 3 to 8 and Figures 10 to 22 are schematic views of different aspects of the power module in accordance with a preferred embodiment of the present invention. [Main component symbol description] 1 〇: power module 11, 11a, lib, 11c: heat dissipation unit 111: first region 112: second region 12: first power device 13: thermal conductive material layer 131: heat conduction layer 132: Insulation Layer 133: Circuit Layer 13a: Copper Substrate 099134616 Form No. A0101 Page 28/Total 47 Page 0992060439-0 201216382 1 4: Second Power Device 15: Lead Frame 16: Sealant 17: Bonding Material Layer 18: Control Device

19a :第三功率器件 19b :第四功率器件 A1 :前表面 A2 :後表面 B :電路板 C :電容器 D :厚度 IL :絕熱層 P2、P1 :引腳 S1〜S4 :開關器件 T :高度 W :線材19a: third power device 19b: fourth power device A1: front surface A2: rear surface B: circuit board C: capacitor D: thickness IL: heat insulating layer P2, P1: pins S1 to S4: switching device T: height W :Wire

099134616 表單編號A0101 第29頁/共47頁 0992060439-0099134616 Form No. A0101 Page 29 of 47 0992060439-0

Claims (1)

201216382 七、申請專利範圍： 一種功率模組，包含： 苐一功率器件及一第二功率 亥功率器件被封于 门封枓中，各该功率器件具有少 电拽β亥專功率器 夕具有至少二電極，該等功率器件之至少一之工 作頻率在25kHz以上， 、中該功率模組是應用於—電源變換器，該電源變換器内 部至少—處功率器件的操作電壓高於48伏特該電源變換 器之功率密度及最高效率分別大於15w/inch3和高於㈣ 、或者該電源變換器之功率密度大於2〇w/inch3、或者該 電源變換器之最高效率高於93%，該功率模組占該電源變 換器總體積比例小於5G% ’應賴功率模組的電能變換級 處理功率占該電源變換器總輸出功率至少30%以上，該電 源變換器總輸出功率在15(^以上。 如申請專利範圍第1項所述之功率模組’其中該電源變換 器為一隔離型AC/DC電源、或非隔離型ac/dc電源變換器 、或隔離型DC/DC變換器、或DC/AC變換器，該電源變換 器之功率密度及最高效率分別大於2〇财/inch3且高於93% '或者該電源變換器之功率密度大於25w/inch3、或者該 電源變換器之最高效率高於94%。 .如申請專利範圍第1項所述之功率模組，其中當該功率模 組立裝於一電路板之一表面時，該功率模組之最高點離該 電路板之該表面之高度係在35mm以下，其中該功率模組 之總厚度係小於β Hi m。 •如申請專利範圍第3項所述之功率模組，其中該功率模組 099134616 表單編號A0101 第30頁/共47頁 0992060439-0 201216382 之最高點離該電路板之該表面之高度係在21mm以上。 5 .如申請專利範圍第3項所述之功率模組，其中該功率模組 之引腳是從該功率模組之下方伸出且直立於該電路板。 6 .如申請專利範圍第4項所述之功率模組，具有一前表面和 一後表面，其中，處於5m/s均衡風速平行風散熱環境下 ，該前表面和該後表面，至少80%以上面積内，各點最大 溫差，小於該前表面和該後表面相對於工作環境平均溫升 的20%。 7 .如申請專利範圍第5項所述之功率模組，其中該功率模組 是應用於一電源變換器，該電源變換器之功率密度及最高 效率分別大於25wMnch3且高於95%、或者該電源變換器 之功率密度大於30w/inch3、或者該電源變換器之最高效 率高於96%。 8 .如申請專利範圍第7項所述之功率模組，所應用的電源變 換器内部至少一處功率器件的操作電壓高於200伏特。 9 .如申請專利範圍第5項所述之功率模組，其寬度小於60mm ，其中於400V之操作電壓下，其引腳間距係介於3mm至 5πππ、其中於30V之操作電壓下，其引腳間距係介於 0.5mm至2mm ° 10.如申請專利範圍第1項所述之功率模組，更包含： 一第一散熱單元，該第一功率器件及該第二功率器件係設 置於該第一散熱單元上方； 一引線框架，與該第一功率器件及該第二功率器件之至少 一電性連接；以及 一封料，係包覆該第一功率器件、該第二功率器件及該引 線框架之一部分。 099134616 表單編號A0101 第31頁/共47頁 0992060439-0 201216382 11 .如申請專利範圍第10項所述之功率模組，其中該第一散熱 單元具有一第一區及一第二區，該第一功率器件設置於該 第—區，該功率模組更包含： 導熱絕緣材料層’設置於5亥第一區並具有一絕緣声，第 一功率器件精由該導熱絕緣材料層設置於該第一散熱單元 其中该封料，更包覆該導熱絕緣材料層之一部分；以及 該第一散熱單元，與該第一功率器件及該第二功率器件之 至少一電性連接。 1 2 ·如申請專利範圍第丨〇項所述之功率模組，其中該第一散熱 單元與該引線框架一體成型》 13 .如申請專利範圍第10項所述之功率模組，其中該第一散熱 單元完全設置於封料内、或部分位元於封斜外、或完全位 於封料外。 14 .如申請專利範圍第10項所述之功率模組，其中該第一散熱 單元係與一穿出該封料之外腳連接、或是該第一散熱單元 穿出該封料並形成一引腳。 15.如申請專利範圍第14項所述之功率模組，其中該第一散熱 單元係與一電壓靜地點電性連接。 16 .如申请專利範圍第1〇項所述之功率模組，其中該第一散熱 單元係分割為複數部分。 17 .如申請專利範圍第10項所述之功率模組，其中該導熱絕緣 材料層更具有-線路層，該引線框架延伸而連結於該線路 層0 18 099134616 如申請專利第u項所述之功率模組，其中該引線框架 延伸而連結於該第-功㈣件及該第二功率器件之至少一 表單編號A0101 第32頁/共47頁 ' 09920( 201216382 19 .如申請專利範圍第11項所述之功率模組，更包含： 一第二散熱單元，設置於該第二功率器件與該導熱絕緣材 料層之間。 20 .如申請專利範圍第10項所述之功率模組，更包含： 一第三散熱單元，設置於該第一散熱單元或者由該第一散 熱單元延展而成。 21 .如申請專利範圍第20項所述之功率模組，其中該第三散熱 單元係穿出該封料。 22 .如申請專利範圍第21項所述之功率模組，其中該第三散熱 單元係穿出該封料並具有一彎折。 23 .如申請專利範圍第21項所述之功率模組，更包含： 一第四散熱單元，與該第三散熱單元連結，並與該封料具 有一空隙。 24 .如申請專利範圍第11項所述之功率模組，其中該導熱絕緣 材料層為金屬基板或金屬化陶魔基板.。 25.如申請專利範圍第11項所述之功率模組，更包含： 一鍵接材料層，該第一功率器件藉由該鍵接材料層連接該 散熱單元，該鍵接材料層之材料的熱導係數大於等於 2W/m.K。 26 .如申請專利範圍第10項所述之功率模組，更具有一排引腳 ，其穿出該封料，並作為訊號傳送或散熱。 27 .如申請專利範圍第26項所述之功率模組，其中該排引腳的 散熱總和大於等於該功率模組總散熱量的5%。 28 .如申請專利範圍第11項所述之功率模組，更包含： 一控制器件，設置於該第一區。 099134616 表單編號A0101 第33頁/共47頁 0992060439-0 201216382 29 30 31 32 33 34 35 36 37 38 099134616 如申請專職圍第28項料之功率触，更包含： —絕熱層，設置於該㈣科與該第—散熱單元之間。 如申請專利範圍第1項所述之功率模組，更包含： —高頻電容器，集成於該功率模組内。 如申請專利範圍第1項所述之功率模組，更包含： —溫度感測器，集成於該功率模組内。 ^申請專利範圍第U)項所述之功率模組，其中該第一散熱 單元之厚度大於該功率模組之厚度的20%。 t申請專職圍第32摘述之功麵組，其中該第一散熱 單元之厚度小於3mm » 如申請專利範圍第U)項所述之功率模組，其中該封料與該 第-功率器件或與該第二功率器件之間距小於該功率模組 之厚度的60%，並且小於3min。 如申請專職㈣U)销叙功率模組，其巾該導熱絕緣 材料層在10x10面積的上下熱阻係小於3}(/¥。 如申請專利範圍第1項所述之功率構組，免包含： —第三功率器件，設置於該第=_器件之上； —第四功率器件，設置於該第“功_器件之上； —引線框架，位於該第-功率H件與該第四功率器件之間 ’並位於該第二功率ϋ件與該第三功率器件之間，並位於 該第三功率器件及該第四功率器件之上；以及 —封料’係包覆該等功率器件及該引線框架之至少—部分 〇 如申请專利範圍第1項所述之功率模組，其中該電源變換 器至少含有兩塊所述的功率模組。 申明專利範®帛3 7項所述之功率模組，該兩塊功率模組 0992060439-0 表單編號Α0101 第34頁/共47頁 201216382 可用同個封料模具進行封料。 .如申凊專利範圍第10項所述之功率模組 熱係數尚於].2W/m. K。 40 ·如申請專利範圍第10項所述之功率模組 熱係數高於1. 8W/m. K。 其中該封料的導 其中該封料的導201216382 VII. Patent application scope: A power module, comprising: a first power device and a second power power device are sealed in a door seal, each of the power devices having less power 拽The two electrodes, at least one of the power devices operating at a frequency above 25 kHz, wherein the power module is applied to a power converter, and at least the power device has an operating voltage higher than 48 volts. The power density and maximum efficiency of the converter are greater than 15w/inch3 and higher than (4), respectively, or the power density of the power converter is greater than 2〇w/inch3, or the highest efficiency of the power converter is higher than 93%, the power module The total volume ratio of the power converter is less than 5G%. The power conversion stage processing power of the power module accounts for at least 30% of the total output power of the power converter. The total output power of the power converter is above 15 (^. Applying the power module of claim 1 wherein the power converter is an isolated AC/DC power supply, or a non-isolated ac/dc power converter, or isolated DC/DC converter, or DC/AC converter, the power density and maximum efficiency of the power converter are respectively greater than 2 / /inch3 and higher than 93% 'or the power density of the power converter is greater than 25w/inch3, or The power module of the power module of claim 1, wherein the power module is the highest of the power module when the power module is mounted on a surface of a circuit board. The height of the surface of the circuit board is less than 35 mm, wherein the total thickness of the power module is less than β Hi m. The power module of claim 3, wherein the power module is 099134616 Form No. A0101, page 30, page 47, 0992060439-0, 201216382 The highest point of the surface of the circuit board is more than 21 mm. 5. The power module of claim 3, wherein the power is The power module of the module is extended from the lower side of the power module and is erected on the circuit board. 6. The power module of claim 4, having a front surface and a rear surface, wherein 5m/s balanced wind speed parallel wind In the hot environment, the front surface and the rear surface are at least 80% of the area, and the maximum temperature difference between the points is less than 20% of the average temperature rise of the front surface and the rear surface relative to the working environment. The power module of claim 5, wherein the power module is applied to a power converter, the power density and the highest efficiency of the power converter are greater than 25 wMnch3 and higher than 95%, respectively, or the power density of the power converter is greater than 30w/inch3, or the highest efficiency of the power converter is higher than 96%. 8. The power module of claim 7, wherein at least one of the power devices within the applied power converter has an operating voltage greater than 200 volts. 9. The power module of claim 5, wherein the width of the power module is less than 60 mm, wherein the pin pitch is between 3 mm and 5πππ at an operating voltage of 400 V, wherein the operating voltage is 30 V. The power module of the first aspect of the invention, further comprising: a first heat dissipating unit, wherein the first power device and the second power device are disposed a first heat dissipating unit; a lead frame electrically connected to at least one of the first power device and the second power device; and a material covering the first power device, the second power device, and the One part of the lead frame. The power module of claim 10, wherein the first heat dissipating unit has a first zone and a second zone, the number of which is the same as the first zone and the second zone. A power device is disposed in the first region, the power module further comprises: a thermal conductive insulating material layer disposed in the first region of the 5H and having an insulating sound, wherein the first power device is disposed by the thermal conductive insulating material layer a heat dissipating unit, wherein the sealing material further covers a portion of the thermal conductive material layer; and the first heat dissipating unit is electrically connected to at least one of the first power device and the second power device. The power module of claim 10, wherein the first heat dissipating unit is integrally formed with the lead frame. The power module of claim 10, wherein the A heat dissipating unit is completely disposed in the sealing material, or a part of the position is outside the sealing, or completely outside the sealing material. The power module of claim 10, wherein the first heat dissipating unit is connected to a foot that is worn out of the sealing material, or the first heat dissipating unit passes through the sealing material and forms a Pin. 15. The power module of claim 14, wherein the first heat dissipating unit is electrically connected to a voltage static location. The power module of claim 1, wherein the first heat dissipating unit is divided into a plurality of parts. The power module of claim 10, wherein the thermally conductive insulating material layer further has a circuit layer extending from the wiring layer 0 18 099134616 as described in claim U a power module, wherein the lead frame extends and is coupled to the first power (four) and at least one form number A0101 of the second power device. Page 32 of 47 '920920 (201216382 19 . The power module further includes: a second heat dissipating unit disposed between the second power device and the layer of thermally conductive insulating material. 20. The power module according to claim 10, further comprising The third heat dissipating unit is disposed in the first heat dissipating unit or is extended by the first heat dissipating unit. The power module according to claim 20, wherein the third heat dissipating unit is worn out The power module of claim 21, wherein the third heat dissipating unit passes through the sealing material and has a bend. 23. As described in claim 21 Power module And the fourth heat dissipating unit is coupled to the third heat dissipating unit and has a gap with the sealing material. The power module of claim 11, wherein the thermal conductive material layer is The power module of the invention of claim 11, further comprising: a bonding material layer, wherein the first power device is connected to the heat dissipation layer by the bonding material layer The power module of the material of the bonding material layer has a thermal conductivity of 2 W/mK or more. 26. The power module of claim 10, further comprising a row of pins that pass through the sealing material, and 27. The power module of claim 26, wherein the sum of the heat dissipation of the row of pins is greater than or equal to 5% of the total heat dissipation of the power module. The power module of claim 11, further comprising: a control device disposed in the first zone. 099134616 Form No. A0101 Page 33 / Total 47 Page 0992060439-0 201216382 29 30 31 32 33 34 35 36 37 38 099134616 Apply for full-time The power contact of the item 28 includes: - a heat insulating layer disposed between the (four) section and the first heat dissipating unit. The power module according to claim 1, further comprising: - a high frequency capacitor The power module according to the first aspect of the patent application includes: a temperature sensor integrated in the power module. ^ Patent application section U) The power module, wherein the thickness of the first heat dissipation unit is greater than 20% of the thickness of the power module. Applying the functional group described in the 32nd of the full-time, wherein the thickness of the first heat dissipating unit is less than 3 mm, as described in claim U, wherein the sealing material and the first power device or The distance from the second power device is less than 60% of the thickness of the power module, and less than 3 minutes. For example, if you apply for full-time (4) U) sales power module, the thermal resistance of the thermal insulation material layer is less than 3} in the 10x10 area. (/¥. As described in the scope of claim 1 of the power construction, exempt: a third power device disposed on the _th device; a fourth power device disposed on the first "power device"; a lead frame located at the first power H device and the fourth power device Between the second power component and the third power device, and located above the third power device and the fourth power device; and - the sealing material is coated with the power device and the At least a part of the lead frame, such as the power module of claim 1, wherein the power converter comprises at least two of the power modules. The power module described in the patent specification 帛3 7 Group, the two power modules 0992060439-0 Form No. Α0101 Page 34 / Total 47 pages 201216382 The same sealing mold can be used for sealing. The thermal module thermal coefficient as stated in claim 10于].2W/m. K. 40 · If applying for a patent 10 around the power module of the thermal coefficient of greater than 1. 8W / m. K. wherein the conductive seal material wherein the conductive seal material 〇 C:_ce:V 099134616 表單編號A0101 第35頁/共4?頁 0992060439-0〇 C:_ce:V 099134616 Form No. A0101 Page 35 of 4 Page 0992060439-0
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9142473B2 (en) 2012-12-10 2015-09-22 Industrial Technology Research Institute Stacked type power device module
TWI555174B (en) * 2013-09-23 2016-10-21 台達電子企業管理（上海）有限公司 Power module
TWI667755B (en) * 2018-06-25 2019-08-01 朋程科技股份有限公司 Package structure of power device
TWI819148B (en) * 2018-11-29 2023-10-21 日商電化股份有限公司 Heat dissipation component

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TWI693682B (en) 2019-08-28 2020-05-11 財團法人工業技術研究院 Electronic device package structure
TWI828542B (en) * 2022-06-02 2024-01-01 信通交通器材股份有限公司 Power module

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9142473B2 (en) 2012-12-10 2015-09-22 Industrial Technology Research Institute Stacked type power device module
TWI555174B (en) * 2013-09-23 2016-10-21 台達電子企業管理（上海）有限公司 Power module
US10381286B2 (en) 2013-09-23 2019-08-13 Delta Electronics (Shanghai) Co., Ltd. Power module
TWI667755B (en) * 2018-06-25 2019-08-01 朋程科技股份有限公司 Package structure of power device
US11232992B2 (en) 2018-06-25 2022-01-25 Actron Technology Corporation Power device package structure
TWI819148B (en) * 2018-11-29 2023-10-21 日商電化股份有限公司 Heat dissipation component
US11903168B2 (en) 2018-11-29 2024-02-13 Denka Company Limited Heat dissipation member

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