TW201212295A - Substrate for light-emitting element, light-emitting device, and method for producing substrate for light-emitting element - Google Patents

Substrate for light-emitting element, light-emitting device, and method for producing substrate for light-emitting element Download PDF

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Publication number
TW201212295A
TW201212295A TW100126385A TW100126385A TW201212295A TW 201212295 A TW201212295 A TW 201212295A TW 100126385 A TW100126385 A TW 100126385A TW 100126385 A TW100126385 A TW 100126385A TW 201212295 A TW201212295 A TW 201212295A
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TW
Taiwan
Prior art keywords
light
substrate
emitting element
frame
glass
Prior art date
Application number
TW100126385A
Other languages
Chinese (zh)
Inventor
Katsuyoshi Nakayama
Original Assignee
Asahi Glass Co Ltd
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Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of TW201212295A publication Critical patent/TW201212295A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48235—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a via metallisation of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

Provided is a substrate for a light-emitting element, with which it is possible to realize broad directivity of the luminous intensity distribution of emitted light and also to prevent degradation of a frame filled with resin as a result of exposure to the emitted light. Also provided are a light-emitting device and a method for producing the substrate for a light-emitting element. A substrate (1) for a light-emitting element comprises: a substrate main body (2) which has a mounting surface (21a) for mounting a light-emitting element (11), and which is formed from a sintered compact of a glass ceramic composition including 30 to 50 mass% of glass powder and 50 to 70 mass% of ceramic filler; and a frame (8) which is disposed at the mounting surface (21a) side of the substrate main body (2) so as to enclose the light-emitting element (11) mounted on the mounting surface (21a), and which includes 80 mass% or more of a glass that is transparent to visible light emitted from the light-emitting element (11).

Description

201212295 六、發明說明： 【明所屬^_冬紆領3 發明領域 本發明係有關於一種可搭載發光元件之發光元件用基 板、包含發光元件用基板上所搭載之發光元件與發光元件 用基板之發光裳置及發光元件用基板之製造方法。 【^:冬好!3 發明背景 近年，隨著發光二極體(light Emitting Diode ; LED)元 件（晶片）之亮度提高、白色化，已將採用白色LEd元件等之 發光裝置使用作為照明、各種顯示器、大型液晶電視之背 光等。上述之發光裝置包含發光元件及用以搭載發光元件 之發光元件用基板，並構成為於發光元件用基板之一面上 搭載有發光元件，且於發光元件搭載面側發出白色光。 使用上述之可發出白色光之發光裝置作為諸如手機内 建相機之閃光燈之光源時，不需聚光性，而係尋求可朝廣 大範圍放射光之廣方向性。又，使用發出白色光之發光裝 置作為諸如液晶顯示器之背光時，亦尋求可朝更廣大範圍 放射光之廣方向性，以避免顯示器整體之亮度分布不均。 上述廣方向性之配光特性’即放射光之分布在視野整體内 形成岣一，稱為「朗伯分布」。 白色LED因無直接發出白色光者，而係具有被包含螢 光體之樹脂包覆藍色LED或紫外線LED等發光元件之構 造。舉例言之’使用藍色LED之白色LED會發白光係藉由 201212295 藍色LED所發出之藍色光激發螢光體，而受激發之榮光體 則會發出藍色之補色之黃色螢光。 同樣地，使用紫外線LED之白色LED會發白光係藉由 紫外線LED所發出之㈣餘發f光體，而受激發之榮光 體則會發出紅色、綠色、藍色之光之三原色之榮光。其等 則均在構成自色LED時’必彡貞充填有包含榮光體之樹脂， 以覆蓋藍色LED或紫外線1^〇。 為使前述之配光特性形成廣方向性，即，使放射光之 为布接近朗伯分布，宜不僅自發光裝置所搭載之發光元件 朝發光元件之前方配光，亦可朝橫向配光。為此，發光元 件之周圍宜不設置任何構造物。然而，如上所述，為構成 白色LED，須以包含螢光體之樹脂覆蓋發光元件。 舉例言之，已有將用於充填用於密封發光元件之樹脂 之框體（或側板)設成可圍繞發光元件之提案（參照諸如專利 文獻1)。 先行技術文獻 專利文獻 專利文獻1:日本特開2008-270791號公報 【發明内容】 發明概要 發明欲解決之課題 然而，上述之使用藍色LED等之白色LED之發光裝置 及搭載發光元件之發光元件用基板尚有以下之問題。 專利文獻1所揭露之發光裝置中，用於充填樹脂之框體 4 ⑧ 201212295 (透光性材料層）係設成可圍繞發光元件。然而，專利文獻1 中’框體(透光性材料層）之内侧表面呈傾斜，而自發光元件 之側面放射之光之-部分將為框體(透光性材料層）之内側 表面所元全反射而射向前方(上方）。目此，雖然發光元件之 則方（上方）之出射量增大，但配光特性形成狹方向性，而無 法使配域性形成廣方向性，即，無法使放射光之分布形 成均一以接近朗伯分布。 又，專利文獻1所揭露之發光裝置及發光元件用基板 中已揭露框體之材料為樹脂。然而，框體(透光性材料層） 之材料若使用樹脂，亦有放射光所致劣化等有關可靠性之 問題。 本發明係有鑑於上述問題而設計者，可提供一種可使 放射光之配光特性形成廣方向性，並可避免用於充填樹脂 之框體因放射光衫化之發光元件㈣板、發光裝置及發 光元件用基板之製造方法。 用以欲解決課題之手段 為解決上述之問題，本發明之特徵在於採取了以下所 述之手段。 本發明可提供-種發光元件用基板，包含有：基板本 體’係由包含玻璃粉末3〇〜50質量。與陶以真料50〜70質量％ 之玻璃陶纽錢（町，亦料「絲本體賴璃陶:光组 成物」）之燒結體所構成，並具有搭财發光元件之搭載面 (以下，亦簡稱為「發光元件槔φ ; 栽面」）者；及，框體，係於 則述基板本體之前祕載面·成輯前祕載面上所搭 201212295 載之前述發光元件，並對前述發光元件所發出之可見光為 透明，且含有玻璃80質量％以上者。 前述框體對入射之可見光之穿透率宜為80%以上。 又，前述框體宜用於在前述框體之框内充填密封樹脂，來 形成可密封前述搭載面上所搭載之前述發光元件之密封 層。又，前述框體之折射率與前述密封層之折射率之折射 率差宜在〇·1以下。 又，前述框體之高度尺寸宜為自前述搭載面至搭載於 前述搭載面上之前述發光元件之上面為止之距離的1.3倍 以上且5倍以下。且，前述框體在令前述基板本體之熱膨脹 係數為α〗(ppm/°C)，而前述框體之熱膨脹係數為a2(ppm/°C) 時’宜滿足Cti — 1.0 S (X2 S Cti之條件。 又，前述框體宜由包含玻璃粉末90〜95質量％，與選自 於由陶瓷填料及矽石填料所構成群組中之至少1種填料 5〜10質量°/〇之玻璃陶瓷組成物（以下，亦稱為「框體用玻璃 陶瓷組成物」）的燒結體所構成。且，前述框體宜設於前述 基板本體之周緣部中之前述搭載面側。又，前述基板本體 宜包含形成於前述基板本體之前述搭載面側並用於反射光 之反射層，以及形成於前述反射層上之保護塗層。 又，本發明可提供一種發光裝置，其包含有：本發明 之發光元件用基板；搭載於前述搭載面上之前述發光元 件；及藉由於前述框體内充填密封樹脂而形成，且用於密 封搭載於前述搭載面上之前述發光元件之密封層。 又，本發明可提供一種發光元件用基板之製造方法， 201212295 該發光元件用基板包含有： 30〜50質量％與喊填料5Q板本體’係由包含玻璃粉末 究組成物之燒結體所構成質里％之基板本體用玻璃陶 框體，係於前述基板本體之<具有發光元件搭載面者；及 載面上所搭載之前述發光搭載面側設成圍繞前述搭 之可見光為透明，且包含颇前述發就件所發出 坡螭80質量〇/〇以上者，該方法包 含焙燒步驟，其係將由前述 有/方法包 土板本體用玻璃陶瓷組成物所 構成且用於形成前述基板本體 粒之第1生片，以及用於形成含 有玻璃80質量％以上之前述 體之第2生片積層而成之積 層體進行焙燒者。 又本發明可提供-種發光元件用基板之製造方法， 該發光元剌基板包含有：騎切，係由包含玻璃粉末 30〜50質量％與陶聽料5〇，質量％之基板本體用玻璃陶 曼組成物之燒結體所料，並具有發光元件㈣面者；及 框體，係於前述基板本體之前述搭載面側設朗繞前述搭 載面上所搭載之前述發光元件，並對前述發光元件所發出 之可見光為透明，且包含玻璃80質量％以上者，該方法包 含接合步驟，其係藉由低熔點玻璃膏，而將由前述基板本 體用玻璃陶瓷組成物之燒結體所構成之前述基板本體，與 含有前述玻璃80質量％以上之前述框體積層而成之積層體 進行熱處理’並將前述基板本體與前述框體進行接合者。 代表上述之數值範圍之「〜」若無特別之限制，即用於 意4曰包含其前後所揭露之數值作為下限值及上限值，以下 本說明書中，「〜」即用於指涉相同之意義。 201212295 發明效果 依據本發明，可使放射光之配光特性形成廣方向性， 並可避免用於充填含有螢光體之樹脂之框體因放射光而劣 化。 圖式簡單說明 第1(a)、（b)圖係顯示第1實施形態之發光元件用基板及 使用該發光元件用基板之發光裝置之一例之平面圖及截面 圖。 第2(a)〜(f)圖係模式地顯示第1圖所示之發光元件用基 板之製造程序之一部分者。 第3 (a)〜(f)圖係模式地顯示第1圖所示之發光元件用基 板之製造程序之一部分者。 第4(a)、（b)圖係顯示第2實施形態之發光元件用基板及 使用該發光元件用基板之發光裝置之一例之平面圖及截面 圖。 第5 (a)〜(d)圖係模式地顯示第4圖所示之發光元件用基 板之製造程序之一部分者。 第6(a)〜(d)圖係模式地顯示第4圖所示之發光元件用基 板之製造程序之一部分者。 第7(a)、（b)圖係顯示第3實施形態之發光元件用基板及 使用該發光元件用基板之發光裝置之一例之平面圖及截面 圖。 第8(a)〜(f)圖係模式地顯示第7圖所示之發光元件用基 板之製造程序之一部分者。 201212295 第9(a)〜(f)圖係模式地顯示第7圖所示之發光元件用基 板之製造程序之一部分者。 第10圖係模式地顯示測定發光裝置所發出之光之配光 特性之方法之截面圖。 【實施方式]| 用以實施發明之形態 以下’就用以實施本發明之形態參照圖示加以說明。 (第1實施形態） 首先’參照第1圖’來說明第1實施形態之發光元件用 基板及發光裝置。第1圖係顯示本實施形態之發光元件用基 板1及使用該發光元件用基板1之發光裝置10之一例之平面 圖（第1(a)圖）及沿行其χ-χ線之截面圖（第Rb)圖）。 本實施形態之發光元件用基板1諸如第i圖所示般係搭 載1個發光元件11。發光元件用基板1可藉接合線12電性連 接發光元件11，且設有密封層13以覆蓋該等發光元件^與 接合線12 ’而構成發光裝置1〇。亦即，第1圖所示之發光裝 置10中，發光元件11、接合線12及密封層13以外之部分乃 本實施形態之發光元件用基板1。 另，本實施形態中所搭載之發光元件雖說明為丨個，但 搭載之發光元件之個數或搭載複數個時之串聯、並聯等電 性連接方法等並無特別之限制。以下所說明之各個構件之 構成在本發明之範圍内，可對應所採用之發光裝置之設計 而予以適當調整。 發光元件用基板1包含大致平板狀（意指在目視基準下 201212295 為平板，以下亦同）之基板本體2、及設於基板本體2上之框 體8。基板本體2係由包含玻璃粉末3〇〜50質量％與陶瓷填料 50〜70質量％之基板本體用玻璃陶瓷組成物之燒結體所構 成。基板本體2作為發光元件用基板時’包含用於搭載發光 元件側之面作為主面21，本例中以其相反侧之面作為背面 22 〇 基板本體2在搭載發光元件時，就抑制爾後之使用時之 損傷等之觀點而言，諸如抗彎強度宜為250MPa以上。基板 本體2、框體8之形狀、厚度、大小等則無特別之限制，通 常，其等可與使用作為發光元件用基板者相同。又，關於 包含構成基板本體2之玻璃粉末與陶瓷填料之基板本體用 玻璃陶瓷組成物之燒結體之原料組成、燒結條件等，則留 待後述之發光元件用基板之製造方法再予說明。 基板本體2之背面22上設有可與外部電路電性連接之 一對外部連接端子6，而基板本體2之内部則設有可電性連 接後述之元件連接端子5與外部連接端子6之一對貫通導體 7。貫通導體7則設成進而貫通以下所說明之基板本體2之主 面上所形成之保護塗層4。 基板本體2之主面21上，除主面21之周緣部及配設有一 對貫通導體7之部分及其周圍附近以外之領域内，形成有含 銀之金屬材料所構成且具有膜厚為8〜5〇μη1之平坦表面之 散熱層3°主面21上進而形成有具有可覆蓋包含散熱層3之 端緣之整體之平坦表面的保護塗層4。 在此，設於基板本體2内部之貫通導體7進而設成貫通 ⑧ 10 201212295 保。蔓塗層4之内部，而自保護塗層4之主面21侧之面（以下稱 為積層面」）貫通至積層面之相反側之面（以下稱為「搭載 面」）2la。保護塗層4則形成在配設有貫通導體7之部分以 外之主面21上之整面上覆蓋散熱層3，而可於搭載面21a上 搭載發光元件11。 另’散熱層3僅須形成於基板本體2之主面21側即可’ »之，亦可直接形成於主面21上，或形成埋設於主面 21内。 政熱層3可將對諸如銀、銀鈀合金或銀白金合金等金屬 粕末添加乙基纖維素等之媒液，並視需要添加溶劑等而形 成β狀者，藉網印等方法印刷於基板本體2上而形成。 保護塗層4之膜厚雖亦隨發光裝置之設計而不同，但為 確保充分之絕緣保護功能，且考量經濟性、與基板本體2之 熱膨脹差所致之變形等，而宜為5〜15一，75〜125μιη則更 佳。另，此之所謂保護塗層4之膜厚係指覆蓋散熱層3之保 護塗層4之膜厚。 保護塗層4係具有平坦表面，而其表面平坦性具體上， 就能確保充分之散熱性且製造上之觀點而言，至 少在搭载有發光元件U之部分’表面粗度Ra宜為〇15帅以 下，Ο.ΙΟμιη以下則更佳。 /、δ更垩續稱成材料並無特別之限制，凡可保護散 層3並確保表面粗度^^者均可使用，但若考量與基板本, 之密著性，則宜與基板本體2之構成材料之基板本體用^ 陶瓷組成物之燒結體相同。然而，考量將發光元件丨1所 201212295 射之光朝出光方向反射之反射性’則亦可使用組成與基板 本體用玻璃陶瓷組成物不同之玻璃陶瓷組成物。又，關於 構成保護塗層4之玻璃陶瓷組成物之燒結體之原料組成、燒 結條件等’亦留待後述之發光元件用基板之製造方法再加 以說明。保護塗層4若為包含玻璃粉末與陶竟填料之玻璃陶 瓷組成物之燒結體，則因可藉與基板之共燒而製成，故較 為適用。 又’保護塗層4之搭載面21 a侧亦可設置反射膜，以達 成儘可能反射發光元件所發出之光之目的。反射膜之構成 材料就經濟性及反射率方面而言，宜使用銀或其合金。反 射膜為銀或其合金時，為避免其表面上發生銀之氧化或硫 化，亦可設成以玻璃膜（亦稱為玻璃保護塗膜）覆蓋銀反射 膜。此時’玻璃膜之表面亦可能相當於本發明之搭載面。 反射膜之膜厚宜為1〇〜300μπι。玻璃膜厚宜為5〜50μπι。 又’前述玻璃膜之玻璃組成以氧化物為基準之m〇1%表示， 可適當例舉含有62〜84%之Si02、10〜25%之B2〇3、0〜5%之 Al2〇3、總計為〇〜5%之他2〇及κ：2〇中之任一種以上，si02 與Al2〇3之含量總計為62〜84%，MgO為0〜10%，且當含有 CaO、SrO、BaO中之任一種以上時其含量之總計為5%以下 之硼矽酸玻璃等。 基板本體2之背面22上設有與外部電路電性連接之一 對外部連接端子6 ’而基板本體2之内部則設有可電性連接 元件連接端子5與外部連接端子6之一對貫通導體八關於元 件連接端子5、外部連接端子6及貫通導體7，其等僅須電性 12 ⑧ 201212295 連接成發光元件11 —元件連接端子54貫通慕_ 子H 7、外部連 接端子6—外部電路’其配設位置及形狀均 文限於第1圖 之圖示，而可適當調整之。 該等元件連接端子5、外部連接端子6及貫通導體7，即 配線導體之構成材料通常若與發光元件用疾相 土奴所使用之配 線導體為相同構造，則均可使用並無特別之限制丄片 線導體之構成材料具體而言可舉以鋼、銀或金等為=、八 之金屬材料。上述之金屬材料中，亦以由銀、银與白^ 銀與鈀所構成之金屬材料為佳。 一 另，元件連接端子5或外部連接端子6宜為厚5〜丨5^^， 並宜構成為於由上述金屬材料所構成之金屬導體層上:成 有可保護該層不受氧化或硫化且具導電性之導^性保護 層。導電性賴層只要由具備可賴上述金屬導體層之功 能之導電輯制構成，則無特狀限制，但 於鍍鎳層上構成有加補金層之魏/金層則更佳。Χ以導電 性保護層之膜厚而言，鍍鎳層宜為3〜2_，鐘金層宜為 〇·1 〜Ι.Ομηι。 在此，通常，亦可於發光元件用基板中，在發光元件 U之搭載部正下方配置散熱孔，以獲致充分之散熱性。 框體8„又於基板本體2之搭裁面21狂側而圍繞搭載於搭 载面21a上之發光兀件^。換言之，框體隨於基板本體2之 周緣之搭載面21a側，*構紅基板本體2之搭載 面21a中 央之圓形部分為底面（以下稱為「空腔底面」)之空腔。其次， 框體8可藉脑體8之翻域密封樹脂，以密封搭載面…201212295. EMBODIMENT OF THE INVENTION The present invention relates to a substrate for a light-emitting element capable of mounting a light-emitting element, a light-emitting element mounted on a substrate for a light-emitting element, and a substrate for a light-emitting element. A method of manufacturing a substrate for emitting light and a light-emitting element. [^: 冬好! 3 Background of the Invention In recent years, as the brightness of the light-emitting diode (LED) component (wafer) has increased and whitened, a light-emitting device using a white LED element or the like has been used as illumination, various Display, backlight of large LCD TV, etc. The light-emitting device includes a light-emitting element and a light-emitting element substrate on which the light-emitting element is mounted, and is configured such that a light-emitting element is mounted on one surface of the light-emitting element substrate, and white light is emitted on the light-emitting element mounting surface side. When the above-mentioned light-emitting device capable of emitting white light is used as a light source of a flash lamp such as a built-in camera of a mobile phone, it is not necessary to collect light, but seeks a wide directivity for radiating light over a wide range. Further, when a light-emitting device that emits white light is used as a backlight such as a liquid crystal display, it is also sought to illuminate a wide range of light to a wider range to avoid uneven brightness distribution of the entire display. The above-described wide-ranging light distribution characteristic, that is, the distribution of the emitted light, is formed in the entire field of view, and is called "Lambertian distribution". The white LED has a structure in which a light-emitting element such as a blue LED or an ultraviolet LED is coated with a resin containing a fluorescent material because it does not directly emit white light. For example, a white LED using a blue LED emits white light. The blue light emitted by the 201212295 blue LED excites the phosphor, and the excited glory emits a blue complementary yellow phosphor. Similarly, a white LED using an ultraviolet LED emits white light through the (four) residual hair emitted by the ultraviolet LED, and the excited glory emits the glory of the three primary colors of red, green, and blue light. When they are constructed as self-color LEDs, they must be filled with a resin containing a glare to cover the blue LED or ultraviolet light. In order to form the above-mentioned light distribution characteristics in a wide directivity, that is, to make the cloth of the emitted light close to the Lambertian distribution, it is preferable that not only the light-emitting elements mounted on the light-emitting device are distributed to the light-emitting elements but also to the lateral direction. For this reason, it is preferable to provide no structure around the illuminating element. However, as described above, in order to constitute a white LED, the light-emitting element must be covered with a resin containing a phosphor. For example, a frame (or a side plate) for filling a resin for sealing a light-emitting element has been proposed to surround the light-emitting element (refer to, for example, Patent Document 1). SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION However, the above-described light-emitting device using a white LED such as a blue LED and a light-emitting element in which a light-emitting element is mounted The substrate has the following problems. In the light-emitting device disclosed in Patent Document 1, a frame for filling a resin 4 8 201212295 (translucent material layer) is provided to surround the light-emitting element. However, in Patent Document 1, the inner surface of the frame (translucent material layer) is inclined, and the portion of the light radiated from the side surface of the light-emitting element is the inner surface of the frame (translucent material layer). Full reflection and shot forward (upper). Therefore, although the amount of light emitted from the upper side (upper side) of the light-emitting element is increased, the light distribution characteristics are narrow-direction, and the compatibility cannot be made to form a wide directivity, that is, the distribution of the emitted light cannot be made uniform. Lambert distribution. Further, in the light-emitting device and the substrate for a light-emitting element disclosed in Patent Document 1, the material of the frame is disclosed as a resin. However, if a resin is used as the material of the frame (translucent material layer), there is a problem of reliability such as deterioration due to radiation. The present invention has been made in view of the above problems, and it is possible to provide a light-emitting element (four) plate and a light-emitting device which can form a wide directivity of the light distribution characteristics of the emitted light and can prevent the frame for filling the resin from being irradiated. And a method of manufacturing a substrate for a light-emitting element. Means for Solving the Problems In order to solve the above problems, the present invention is characterized by adopting the means described below. The present invention can provide a substrate for a light-emitting element, comprising: the substrate body is made of a glass powder containing 3 to 50 masses. It is composed of a sintered body of a ceramic glass New York (original, also known as "silk body glazed tile: light composition"), which is 50 to 70% by mass of the ceramics, and has a mounting surface for the luminescent light-emitting element (hereinafter, Also referred to as "light-emitting element 槔 φ; planting surface"); and the frame body is attached to the light-emitting element of 201212295 which is carried on the front surface of the substrate and on the front surface of the substrate. The visible light emitted from the light-emitting element is transparent and contains 80% by mass or more of glass. The transmittance of the frame to incident visible light is preferably 80% or more. Further, the frame is preferably used for filling a sealing resin in a frame of the frame to form a sealing layer capable of sealing the light-emitting element mounted on the mounting surface. Further, the difference in refractive index between the refractive index of the frame and the refractive index of the sealing layer is preferably 〇·1 or less. Further, the height of the frame is preferably 1.3 times or more and 5 times or less the distance from the mounting surface to the upper surface of the light-emitting element mounted on the mounting surface. Further, the frame body is such that the thermal expansion coefficient of the substrate body is α (ppm/° C.), and when the thermal expansion coefficient of the frame is a2 (ppm/° C.), it is desirable to satisfy Cti — 1.0 S (X2 S Cti). Further, the frame is preferably made of a glass ceramic containing 90 to 95% by mass of the glass powder and at least one kind of filler selected from the group consisting of ceramic fillers and vermiculite fillers of 5 to 10 mass%/〇. The sintered body of the composition (hereinafter also referred to as "glass ceramic composition for a frame") is preferably provided on the mounting surface side of the peripheral portion of the substrate body. It is preferable to include a reflective layer formed on the mounting surface side of the substrate body and used for reflecting light, and a protective coating formed on the reflective layer. Further, the present invention can provide a light-emitting device including the light-emitting device of the present invention. a substrate for a device; the light-emitting device mounted on the mounting surface; and a sealing layer formed by filling a sealing resin in the frame and sealing the light-emitting element mounted on the mounting surface. A method for producing a substrate for a light-emitting element can be provided, and the substrate for a light-emitting element includes: 30 to 50% by mass and the 5Q plate body of the shim filler is composed of a sintered body containing a composition of a glass powder. a glass ceramic frame for a substrate body, wherein the substrate body has a light-emitting element mounting surface; and the light-emitting mounting surface side mounted on the carrier surface is transparent to the visible light, and includes the hair In the case where the surface is 80 〇/〇 or more, the method includes a baking step which is composed of the glass ceramic composition of the above-described method/method for the earth-filling plate body and is used to form the first life of the substrate body grain. And a laminated body obtained by forming a second green sheet containing the above-mentioned body of 80% by mass or more of the glass, and baking the film. The present invention provides a method for producing a substrate for a light-emitting element, the light-emitting element substrate The method includes: riding and cutting, which is composed of a sintered body containing a glass ceramic powder of 30 to 50% by mass and a ceramic material of 5 〇, mass% of the substrate body, a light-emitting element (four) surface; and a frame body on which the light-emitting element mounted on the mounting surface is provided on the mounting surface side of the substrate body, and is transparent to visible light emitted from the light-emitting element, and includes glass 80% by mass or more, the method includes a bonding step of using the low-melting-point glass paste to form the substrate body composed of the sintered body of the glass ceramic composition for the substrate main body, and the glass containing 80% by mass or more of the glass. The laminated body formed by the volume of the frame is heat-treated and the substrate body is joined to the frame. The "~" representing the above numerical range is not particularly limited, and is intended to be used in the context of The numerical values disclosed are the lower limit and the upper limit. In the following description, "~" is used to refer to the same meaning. According to the present invention, it is possible to form a wide directivity of the light distribution characteristics of the emitted light, and it is possible to prevent the frame for filling the resin containing the phosphor from being deteriorated by the emitted light. 1(a) and (b) are a plan view and a cross-sectional view showing an example of a light-emitting device substrate and a light-emitting device using the light-emitting device substrate of the first embodiment. The second (a) to (f) drawings schematically show one of the manufacturing procedures of the substrate for a light-emitting element shown in Fig. 1. The third (a) to (f) drawings schematically show a part of the manufacturing procedure of the substrate for a light-emitting element shown in Fig. 1. 4(a) and 4(b) are a plan view and a cross-sectional view showing an example of a light-emitting device substrate and a light-emitting device using the light-emitting device substrate of the second embodiment. The fifth (a) to (d) drawings schematically show a part of the manufacturing procedure of the substrate for a light-emitting element shown in Fig. 4. The sixth (a) to (d) drawings schematically show one of the manufacturing procedures of the substrate for a light-emitting element shown in Fig. 4. 7(a) and 7(b) are a plan view and a cross-sectional view showing an example of a light-emitting device substrate and a light-emitting device using the light-emitting device substrate of the third embodiment. The eighth (a) to (f) diagrams schematically show a part of the manufacturing procedure of the substrate for a light-emitting element shown in Fig. 7. 201212295 Sections 9(a) to (f) show a part of the manufacturing procedure of the substrate for a light-emitting element shown in Fig. 7 . Fig. 10 is a cross-sectional view schematically showing a method of measuring the light distribution characteristics of light emitted from the light-emitting device. [Embodiment] | MODE FOR CARRYING OUT THE INVENTION Hereinafter, the mode for carrying out the invention will be described with reference to the drawings. (First Embodiment) First, a substrate for a light-emitting element and a light-emitting device according to the first embodiment will be described with reference to Fig. 1 . Fig. 1 is a plan view (Fig. 1(a)) showing a light-emitting device substrate 1 of the present embodiment and a light-emitting device 10 using the light-emitting device substrate 1, and a cross-sectional view along the χ-χ line thereof ( Figure Rb)). The light-emitting element substrate 1 of the present embodiment is mounted with one light-emitting element 11 as shown in Fig. i. The light-emitting element substrate 1 can be electrically connected to the light-emitting element 11 by a bonding wire 12, and a sealing layer 13 is provided to cover the light-emitting elements and the bonding wires 12' to constitute the light-emitting device 1''. In other words, in the light-emitting device 10 shown in Fig. 1, the light-emitting element 11, the bonding wire 12, and the sealing layer 13 are the substrate 1 for a light-emitting element of the present embodiment. In addition, although the number of the light-emitting elements to be mounted in the present embodiment is described as a single one, the number of the light-emitting elements to be mounted or the electrical connection method such as series connection or parallel connection when a plurality of devices are mounted is not particularly limited. The constitution of each of the members described below is within the scope of the present invention and can be appropriately adjusted in accordance with the design of the light-emitting device to be used. The substrate 1 for a light-emitting element includes a substrate body 2 having a substantially flat shape (in the case of a flat plate under the visual standard 201212295, the same applies hereinafter), and a frame 8 provided on the substrate body 2. The substrate main body 2 is composed of a sintered body containing a glass ceramic composition of 3 to 50% by mass of the glass powder and 50 to 70% by mass of the ceramic filler. When the substrate main body 2 is used as the substrate for a light-emitting element, the surface including the side on which the light-emitting element is mounted is used as the main surface 21, and in this example, the surface on the opposite side is the back surface 22. When the substrate body 2 is mounted on the light-emitting element, the substrate body 2 is suppressed. From the viewpoint of damage or the like at the time of use, for example, the bending strength is preferably 250 MPa or more. The shape, thickness, size, and the like of the substrate body 2 and the frame body 8 are not particularly limited, and generally, the same can be used as the substrate for a light-emitting element. In addition, the raw material composition, the sintering conditions, and the like of the sintered body of the glass ceramic composition for the substrate body of the glass powder and the ceramic filler which are the substrate body 2 are described, and the method for producing the substrate for a light-emitting element to be described later will be further described. The back surface 22 of the substrate body 2 is provided with an external connection terminal 6 electrically connectable to an external circuit, and the inside of the substrate body 2 is electrically connected to one of the component connection terminal 5 and the external connection terminal 6 which will be described later. For the through conductor 7. The through conductor 7 is further provided to penetrate the protective coating layer 4 formed on the main surface of the substrate body 2 described below. The main surface 21 of the substrate main body 2 is formed of a metal material containing silver and having a film thickness of 8 in a region other than the peripheral portion of the main surface 21 and a portion where the pair of through conductors 7 are disposed and the vicinity thereof. The heat-dissipating layer of the flat surface of the surface of the film 5 is further formed with a protective coating layer 4 having a flat surface covering the entire edge of the heat-dissipating layer 3. Here, the through conductor 7 provided inside the substrate body 2 is further provided to pass through 8 10 201212295. The inside of the vine coating layer 4, and the surface on the side of the main surface 21 of the protective coating layer 4 (hereinafter referred to as the "layer") penetrates the surface opposite to the layer (hereinafter referred to as "mounting surface") 2la. The protective coating layer 4 is formed on the entire surface of the main surface 21 on which the through-conductor 7 is disposed, so as to cover the heat-dissipating layer 3, and the light-emitting element 11 can be mounted on the mounting surface 21a. Further, the heat dissipation layer 3 may be formed only on the main surface 21 side of the substrate main body 2, or may be formed directly on the main surface 21 or embedded in the main surface 21. The chemical layer 3 may be added to a metal liquid such as silver, a silver-palladium alloy or a silver-plated gold alloy, and a solvent such as ethyl cellulose may be added to form a β-like substance as needed, and may be printed by a method such as screen printing. The substrate body 2 is formed on the substrate body 2. Although the film thickness of the protective coating layer 4 differs depending on the design of the light-emitting device, it is preferably 5 to 15 in order to ensure sufficient insulation protection function and to consider economy and deformation due to poor thermal expansion of the substrate body 2. One, 75~125μιη is even better. Further, the film thickness of the protective coating layer 4 herein means the film thickness of the protective coating layer 4 covering the heat dissipation layer 3. The protective coating layer 4 has a flat surface, and the surface flatness thereof specifically ensures sufficient heat dissipation and, in terms of manufacturing, at least the portion where the light-emitting element U is mounted has a surface roughness Ra of 〇15. Shuai is below, Ο.ΙΟμιη is better. /, δ is more continuously called material is not particularly limited, can protect the layer 3 and ensure the surface roughness ^ ^ can be used, but if the consideration of the substrate, the adhesion, it should be with the substrate body The substrate body of the constituent material of 2 is the same as the sintered body of the ceramic composition. However, a glass ceramic composition different from the glass ceramic composition for the substrate body may be used in consideration of the reflectivity of the light emitted from the light-emitting element 丨1 in 201212295 toward the light-emitting direction. In addition, the raw material composition, sintering conditions, and the like of the sintered body of the glass ceramic composition constituting the protective coating layer 4 are also described in the method for producing a substrate for a light-emitting element to be described later. The protective coating layer 4 is a sintered body of a glass ceramic composition containing a glass powder and a ceramic filler, and is preferably produced by co-firing with a substrate. Further, a reflective film may be provided on the side of the mounting surface 21a of the protective coating layer 4 for the purpose of reflecting the light emitted from the light-emitting element as much as possible. Composition of the reflective film It is preferable to use silver or an alloy thereof in terms of economy and reflectance. When the reflective film is silver or an alloy thereof, in order to prevent oxidation or vulcanization of silver on the surface thereof, it is also possible to cover the silver reflective film with a glass film (also referred to as a glass protective coating film). At this time, the surface of the glass film may correspond to the mounting surface of the present invention. The film thickness of the reflective film is preferably from 1 〇 to 300 μm. The thickness of the glass film is preferably 5 to 50 μm. Further, the glass composition of the glass film is represented by m〇1% based on the oxide, and may suitably include 62 to 84% of SiO 2 , 10 to 25% of B 2 〇 3, and 0 to 5% of Al 2 〇 3, In total, it is 〇~5% of 2〇 and κ: 2〇, and the content of si02 and Al2〇3 is 62~84%, MgO is 0~10%, and when it contains CaO, SrO, BaO A boric acid glass or the like in which the total content thereof is 5% or less in any of the above. The back surface 22 of the substrate body 2 is provided with one of the external connection terminals 6' electrically connected to the external circuit, and the inside of the substrate body 2 is provided with one of the electrical connection elements 5 and the external connection terminal 6 8. Regarding the component connection terminal 5, the external connection terminal 6 and the through conductor 7, etc., only need to be electrically connected 12 8 201212295 is connected into the light-emitting element 11 - the component connection terminal 54 is connected to the interlayer H 7 , the external connection terminal 6 - the external circuit ' The arrangement position and shape are limited to the illustration of Fig. 1, and can be appropriately adjusted. The component connection terminal 5, the external connection terminal 6, and the through conductor 7, that is, the constituent material of the wiring conductor are generally the same as those of the wiring conductor used for the light-emitting element, and are not particularly limited. The constituent material of the ruthenium wire conductor may specifically be a metal material such as steel or silver or gold. Among the above metal materials, a metal material composed of silver, silver, and white silver and palladium is preferred. Further, the component connection terminal 5 or the external connection terminal 6 is preferably 5 to 丨5^^, and is preferably formed on the metal conductor layer composed of the above metal material to protect the layer from oxidation or vulcanization. And conductive conductive layer. The conductive layer is not limited as long as it is composed of a conductive material having a function of the metal conductor layer. However, it is more preferable to form a Wei/gold layer having a gold layer on the nickel plating layer. Χ In terms of the film thickness of the conductive protective layer, the nickel plating layer is preferably 3 to 2 _, and the gold plating layer is preferably 〇·1 Ι.Ομηι. Here, in general, in the substrate for a light-emitting element, a heat dissipation hole may be disposed directly under the mounting portion of the light-emitting element U to obtain sufficient heat dissipation. The frame body 8 is further slid on the mounting surface 21a of the substrate body 2 and surrounds the light-emitting element mounted on the mounting surface 21a. In other words, the frame body is mounted on the mounting surface 21a side of the peripheral edge of the substrate body 2, The circular portion at the center of the mounting surface 21a of the substrate body 2 is a cavity of a bottom surface (hereinafter referred to as a "cavity bottom surface"). Next, the frame 8 can be sealed with a resin body of the brain body 8 to seal the mounting surface...

13 S 201212295 上所搭載之發光元件11。 框體8之内壁-如第糊所示，亦可對主 垂直狀態（意指目視基準下為垂直，致 直M下亦同），或非垂直而 自@_呈_。又’框體8之内 錐狀時，呈錐狀之内壁亦可形成平面，或諸如積層複^ 框體用生片而形成階狀。 &lt; 框體8只要為透明之無機質材料’則無特別之限制，作 就透明性及避免放射光所致之劣化方 ^ 5 ’且包含破域 80質量。/。以上。依據上述理*，框體8宜含有玻物〜 量％與喊填料或梦石填料之至少翠種5,質量％。框體賈8 若為包含玻璃粉末90〜95質量❶/。與陶瓷填料5〜ι〇質量％之 璃陶瓷組成物之燒結體，則以透明性及可靠性方面來 佳。另，前述玻璃陶瓷組成物中，亦可以矽石填料部分^ 全部置換陶瓷填料。另，矽石填料雖亦為陶瓷填料之丨種， 但本說明書中，會有將選自於由氧化鋁粉末、氧化鍅粉末、 氧化鈦粉末及莫來石粉末(mullite powder)所構成群組中之 至少1種所構成之填料稱為陶瓷填料，以區別使用矽石填料 與陶瓷填料之情況。 又，框體8宜對發光元件11所發出之光為透明。藉此， 自發光元件11朝外側側方放射之光即可穿過密封層13作為 可見光，並於自内側側方朝框體8入射時，入射之可見光會 穿透框體8而朝框體8之外侧側方或外側上方放射。因此， 可使發光裝置10所放射之光之配光特性形成廣方向性。 又，框體8在諸如第1(b)圖中之光路徑L所示般，自内 201212295 側側方朝框體8人射之可見光穿透㈣8後之穿透光相對入 射之可見光之穿透率在未達8G%時，將難以使發光裝置1〇 所放射之光之配光特性形成廣方向性。 因此，框體8對入射之可見光之穿透率宜在㈨。/。以上。 自内側側方朝框體8入射之可見光穿透框體8後之穿透光相 對入射之可見光之穿透率若為85%以上則更佳。藉此，而 更可使發光裝置10所放射之光之配光特性形成廣方向性。 進而，框體8宜自内側側方朝框體8垂直入射之包含 400〜800nm之波長領域之光之可見光穿透框體8後之穿透 光相對入射之可見光在400〜800nm之波長領域内之平均穿 透率為80°/。以上。藉此，則更可使發光裝置1〇所放射之光 之配光特性形成廣方向性。以下，本說明書中可見光之穿 透率記為80%時’或δ己為其它數值時，意指4〇〇〜g〇〇nm之可 見光之波長領域内之平均穿透率。 上述之牙透率在框體8之寬尺寸為諸如〇.6mm時，宜自 内側側方朝框體8入射之可見光穿透框體8後之穿透光相對 入射之可見光之穿透率在80%以上。 又，框體8之折射率與密封層13之折射率之折射率差若 在0.1以下，則町避免框體8與密封層13之界面上發生全反 射，並因可使發光裝置1〇所放射之光之配光特性形成廣方 向性，故較為適用。舉例言之’密封層13之折射率為1.6， 框體8之折射率為1.1 ’即為良好組合之一例。前述折射率 差在0·07以下則較佳。前述折射率差在〇.〇5以上則更佳。 又，框體8之高度尺寸Η1在自搭載面21a至搭載面21a 15 1 201212295 上搭載之發光元件11之上面為止之距離HO之小於1.3倍 時，框體8之框内之密封樹脂之充填將不充分。其結果，因 密封層13中之螢光體之添加量會減少，故將難以調整發光 裝置10之色度。另，框體8之高度尺寸H1在搭載面21a至發 光元件11上面之距離H0之超過5倍時，因發光元件11所發出 之光可穿透密封層13之穿透率將降低，故發光裝置10之出 光效率會降低。故而’框體8之高度尺寸H1宜為搭載面21a 至搭載面21a上所搭載之發光元件u之上面之距離ho之1.3 倍以上且5倍以下。藉此，即可輕易調整發光裝置10之色 度，、並避免出光效率之降低。 另，如第1(b)圖所示’本實施形態中，框體8之高度尺 寸H1設為保護塗層4上面之搭載面2la至框體8上面之高度 尺寸。又，搭載面21 a至發光元件π上面之距離H〇#保護塗 層4上面至發光元件η上面之距離。 又，設基板本體2之熱膨脹係數為a】(ppmA：)，而設框 體8之熱膨脹係數為a2(ppm/°c)時，若a2&gt; %，則一如後述， 焙燒積層體後冷卻至室溫時，因框體8將承受拉伸應力，則 發光元件用基板1恐有破裂之虞。而，若a2〈 ％ _丨〇，則焙 燒積層體後冷卻至室溫時，因框體8將承受較大之壓縮應 力，則發光元件用基板1恐有破裂之虞。故而，框體8宜滿 足cm—1·0$οΐ2$αι之條件。具體而言，可諸如將q設為 4.5ppm/〇C，而將a2設為3.8ppm/t。 又，關於框體用玻璃陶瓷組成物之燒結體之原料組 成、燒結條件等，亦留待後述之發光元件用基板之製造方 16 201212295 法再加以說明。 以上，雖已就本實施形態之發光元件用基板ι加以說 明’但本實施形態之發光裝置1〇係於本實施形態之發光元 件用基板！之搭載面21a上藉聚魏固晶鮮之固晶劑搭載 ㈣元件等發光元件u。發光裝置1()之構成係藉接合線η 對70件連接端子5連接其未顚示之發光元件u之電極，並 設有密封層13而覆蓋發光元件11及接合線12。 密封層13可使用諸如聚石夕氧樹脂或環氧樹脂，尤其聚 石夕氧樹脂在耐紐、賴性及透紐方面均甚優良而較為 適用。 亦可對密封層13混合、分散螢光體等。藉此，舉例言 之，在來自藍色LED元件等之發光元件丨丨之放射光穿過密 封層13時，螢紐會被激發而發出可見光，且發出之可見 光會與發光（件11所放射之光混色，而使發光裝置1〇獲致 白色等所期望之發光色。 或，亦可對密封層13混合、分散諸如可發出紅色、綠 色 '藍色之光之三原色之蝥光體等。藉此，舉例言之，在 來自1外線LED元件等之發光元彳㈣之放射光穿過密封層 13時’螢光體會被激發而發出光之三原色且發出之三原 色會品色而可獲致諸如自色等所期望之發光色。另，榮光 體之種類並無制之限制，可對應發光元件η所放射之光 之種類及所需之發色而適當加以選擇。 以下’則參照第2及3圖，以第1圖所示之發光裝置10之 發光7〇件用基板1為例說明本實施形態之發光元件用基板Light-emitting element 11 mounted on 13 S 201212295. The inner wall of the frame 8 - as shown in the second paste - may also be in the main vertical state (meaning vertical under the visual basis, straightforward under M), or non-vertical from @_present _. Further, when the inside of the frame 8 is tapered, the inner wall of the tapered shape may be formed into a flat surface, or the laminated body may be formed into a step by a green sheet. &lt; The frame 8 is not particularly limited as long as it is a transparent inorganic material, and is excellent in transparency and avoidance of deterioration due to radiation, and includes 80% of the damage. /. the above. According to the above principle, the frame 8 preferably contains at least 5% by mass of the glass material, and at least 5% by mass of the shim filler or the dream stone filler. Frame Jia 8 if it contains glass powder 90~95 mass ❶ /. The sintered body of the glass ceramic composition having a ceramic filler of 5 to 10% by mass is preferable in terms of transparency and reliability. Further, in the above glass ceramic composition, the ceramic filler may be replaced entirely by the vermiculite filler portion. In addition, although the vermiculite filler is also a ceramic filler, in the present specification, there may be a group selected from the group consisting of alumina powder, cerium oxide powder, titanium oxide powder and mullite powder. The filler composed of at least one of them is referred to as a ceramic filler to distinguish between the use of a vermiculite filler and a ceramic filler. Further, the casing 8 is preferably transparent to the light emitted from the light-emitting element 11. Thereby, the light radiated from the light-emitting element 11 toward the outer side can pass through the sealing layer 13 as visible light, and when incident on the frame 8 from the inner side, the incident visible light can penetrate the frame 8 toward the frame. 8 Radiation is emitted on the lateral side or the lateral side. Therefore, the light distribution characteristics of the light emitted from the light-emitting device 10 can be made to have a wide directivity. Further, as shown by the light path L in the first (b) diagram, the frame 8 is penetrated by the visible light passing through the (4) 8 from the side of the inner side of the inner surface of the inner surface of the inner surface of When the transmittance is less than 8 G%, it is difficult to form the light distribution characteristics of the light emitted from the light-emitting device 1 to form a wide directivity. Therefore, the transmittance of the frame 8 to the incident visible light is preferably (9). /. the above. It is more preferable that the transmittance of the visible light incident on the frame 8 from the inner side toward the frame 8 is relatively 85% or more with respect to the incident visible light. Thereby, the light distribution characteristics of the light emitted from the light-emitting device 10 can be made to have a wide directivity. Further, the frame 8 is preferably perpendicular to the frame 8 and is incident on the frame 8 and the light having a wavelength of 400 to 800 nm passes through the frame 8 and penetrates the frame 8 with respect to the incident visible light in the wavelength range of 400 to 800 nm. The average penetration is 80°/. the above. Thereby, the light distribution characteristics of the light emitted by the light-emitting device 1 can be made to have a wide directivity. Hereinafter, in the present specification, when the transmittance of visible light is 80% or δ is other values, it means the average transmittance in the wavelength range of visible light of 4 〇〇 to g 〇〇 nm. When the width of the frame 8 is, for example, 〇6 mm, the transmittance of the visible light which is incident from the inner side toward the frame 8 after the visible light penetrates the frame 8 is opposite to the incident visible light. More than 80%. When the refractive index difference between the refractive index of the frame 8 and the refractive index of the sealing layer 13 is 0.1 or less, total reflection at the interface between the frame 8 and the sealing layer 13 is prevented, and the light-emitting device 1 can be used. The light distribution characteristics of the emitted light form a wide directionality, so it is suitable. For example, the refractive index of the sealing layer 13 is 1.6, and the refractive index of the frame 8 is 1.1 ′, which is an example of a good combination. It is preferable that the refractive index difference is 0 or less. The above refractive index difference is more preferably 〇.〇5 or more. Further, when the height dimension Η1 of the casing 8 is less than 1.3 times the distance HO from the mounting surface 21a to the upper surface of the light-emitting element 11 mounted on the mounting surface 21a 15 1 201212295, the sealing resin in the frame of the casing 8 is filled. Will not be sufficient. As a result, since the amount of the phosphor added to the sealing layer 13 is reduced, it is difficult to adjust the chromaticity of the light-emitting device 10. Further, when the height H1 of the casing 8 is more than 5 times the distance H0 from the mounting surface 21a to the upper surface of the light-emitting element 11, the transmittance of the light-permeable sealing layer 13 emitted by the light-emitting element 11 is lowered, so that the light is emitted. The light extraction efficiency of the device 10 is reduced. Therefore, the height H1 of the casing 8 is preferably 1.3 times or more and 5 times or less the distance ho from the mounting surface 21a to the upper surface of the light-emitting element u mounted on the mounting surface 21a. Thereby, the chromaticity of the light-emitting device 10 can be easily adjusted, and the reduction in light-emitting efficiency can be avoided. Further, as shown in Fig. 1(b), in the present embodiment, the height dimension H1 of the casing 8 is the height dimension of the mounting surface 21a on the upper surface of the protective coating layer 4 to the upper surface of the casing 8. Further, the distance H 〇 from the mounting surface 21 a to the upper surface of the light-emitting element π protects the distance from the upper surface of the coating layer 4 to the upper surface of the light-emitting element η. In addition, when the thermal expansion coefficient of the substrate main body 2 is a] (ppmA:) and the thermal expansion coefficient of the frame 8 is a2 (ppm/°c), if a2>%, the laminated body is fired as described later. When the frame body 8 is subjected to tensile stress at room temperature, the substrate 1 for a light-emitting element is likely to be broken. On the other hand, if a2 < % _ 丨〇, when the laminated body is baked and then cooled to room temperature, the substrate 8 will be subjected to a large compressive stress, and the substrate 1 for a light-emitting element may be broken. Therefore, the frame 8 should satisfy the condition of cm-1·0$οΐ2$αι. Specifically, it is possible to set, for example, q to 4.5 ppm/〇C and a2 to 3.8 ppm/t. In addition, the raw material composition, the sintering conditions, and the like of the sintered body of the glass ceramic composition for a frame are also described in the method of manufacturing the substrate for a light-emitting element to be described later. As described above, the light-emitting device substrate 1 of the present embodiment has been described. However, the light-emitting device 1 of the present embodiment is used for the light-emitting element substrate of the present embodiment! On the mounting surface 21a, a light-carrying element u such as a component is mounted on a solid-state fixing agent. The light-emitting device 1 () is configured by connecting the electrodes of the light-emitting elements u not shown to the 70 connection terminals 5 by the bonding wires η, and is provided with a sealing layer 13 to cover the light-emitting elements 11 and the bonding wires 12. The sealing layer 13 can be used, for example, as a polysulfide resin or an epoxy resin, and in particular, the polyoxin resin is excellent in terms of resistance to New Zealand, properties, and penetration. The phosphor layer or the like may be mixed and dispersed in the sealing layer 13. By way of example, when the emitted light from the light-emitting element of the blue LED element or the like passes through the sealing layer 13, the fluorescent element is excited to emit visible light, and the emitted visible light and the emitted light are emitted. The light is mixed to cause the light-emitting device 1 to obtain a desired illuminating color such as white. Alternatively, the sealing layer 13 may be mixed and dispersed, such as a phosphor of three primary colors that emit red, green, and blue light. For example, when the emitted light from the illuminating element (4) of the external LED element or the like passes through the sealing layer 13, the phosphor will be excited to emit the three primary colors of light and the three primary colors will be colored to obtain, for example, self. The color of the luminescent color is not limited, and it can be appropriately selected according to the type of light emitted by the light-emitting element η and the desired color. The following 'refer to the second and third. In the light-emitting device substrate 1 of the light-emitting device 10 shown in Fig. 1, the substrate for a light-emitting element of the present embodiment will be described as an example.

17 S 201212295 之製造方法。第2及3圖係模式地顯示第1圖所示之發光元件 用基板之製造程序之一部分者。 本實施形態之發光元件用基板可藉包含諸如以下之 (A1)步驟〜(D1)步驟之製造方法而製成。又，以下則就製造 所使用之構件附以與成品之構件相同之標號加以說明。 (A1)生片製作步驟 生片製作步驟中’將製作構成基板本體2之基板本體用 生片2、構成保護塗層4之保護塗層用生片4及構成框體8之 框體用生片8。 第2圖係模式地顯示生片製作步驟者。第2(a)圖及第2(b) 圖分別為顯示框體用生片8之平面圖及沿行其χ_χ線之截面 圖。第2(c)圖及第2(d)圖分別為顯示保護塗層用生片4之平 面圖及沿行其χ-χ線之截面圖。第2(e)圖及第2(f)圖分別為 顯不基板本體用生片2之平面圖及沿行其Χ-Χ線之截面圖。 就基板本體用生片2及保護塗層用生片4可對包含玻璃 粉末與陶瓷填料之基板本體用及保護塗層用玻璃陶瓷組成 物添加黏結劑，並視需要添加可塑劑、分散劑、溶劑等而 &quot;周製黎'料。且，就框體用生片8則對包含玻璃粉末與陶瓷填 料之框體用玻璃陶瓷組成物添加黏結劑，並視需要添加可 塑劑、分散劑、溶劑等而調製漿料。其次，將調製成之漿 料藉到刀成膜法等而成形乾燥製成預定形狀之片狀。 基板本體用生片2及保護塗層用生片4之製造所使用之 基板本體用玻璃陶瓷組成物之玻璃粉末(以下稱為「基板本 體用破螭粉末」）雖非必受限，但宜使用玻璃轉化溫度(Tg) 18 201212295 在550C以上且700°C以下者。玻璃轉化溫度（Tg)若未達 550 C，則恐有難以去脂之虞，若超過7〇〇艺，則恐有收縮 開始溫度將提高，尺寸精度降低之虞。 又，宜在800。(：以上且880。(：以下焙燒後析出結晶。未 析出結晶時，恐有無法獲致充分之機械強度之虞。進而， 藉DTA(示差熱分析）測得之結晶化尖峰溫度(Tc)宜為88〇。〇 以下。結晶化尖峰溫度(Tc)若超過880。(：，則恐有尺寸精度 降低之虞。 上述基板本體用玻璃粉末宜為含有諸如57πι〇ι%以上 且65mol°/〇以下之Si〇2、13mol%以上且i8mol%以下之 B2〇3、9mol%以上且23mol%以下之CaO、3mol%且以上 8mol%以下之AbO3、總計在〇.5m〇i%以上且6m〇i%以下之選 自於K2〇及NasO所構成群組中之至少丨種者。使用以上所述 者，即可輕易提昇基板本體2之表面之平坦性。 在此’ Si〇2乃玻璃之網狀結構形成體。si〇2之含量在 小於57mol%時，恐有難以製得穩定之玻璃，且化學耐久性 亦恐有降低之虞。而’ Si02之含量在超過65mol%時，玻璃 熔融溫度或玻璃轉化溫度(Tg)恐有過高之虞。si〇2之含量宜 為58mol%以上，59mol%以上則較佳，6〇mol%以上尤佳。 且，Si02之含量宜為64mol%以下，63mol%以下則更佳。 B2〇3乃玻璃之網狀結構形成體。B2〇3之含量在小於 13mol%以下時’玻璃炼融溫度及玻璃轉化溫度(Tg)恐有過 高之虞。而，B2〇3之含量在超過18mol%時，恐有難以獲致 穩定之玻璃，且化學耐久性亦恐有降低之虞。B2〇3之含量 5 19 201212295 宜為14mol%以上，15mol%以上則更佳。且，B2〇3之含量宜 在17mol%以下，而16mol%以下則更佳。17 S 201212295 Manufacturing method. In the second and third drawings, one of the manufacturing procedures of the substrate for a light-emitting element shown in Fig. 1 is schematically displayed. The substrate for a light-emitting element of the present embodiment can be produced by a production method including the steps (A1) to (D1) below. In the following, the components used for manufacturing will be described with the same reference numerals as the components of the finished product. (A1) Green sheet production step In the green sheet production step, 'the green sheet for the substrate main body 2 constituting the substrate main body 2, the green sheet 4 for protective coating constituting the protective coat layer 4, and the frame for constituting the frame 8 are used. Slice 8. Fig. 2 is a diagram showing the steps of the green sheet production. Fig. 2(a) and Fig. 2(b) are plan views showing the green sheet 8 for the frame and a cross-sectional view taken along the line χ. Fig. 2(c) and Fig. 2(d) are plan views showing the green sheets 4 for protective coating and cross-sectional views taken along the χ-χ line, respectively. Fig. 2(e) and Fig. 2(f) are plan views showing the green sheet 2 for the substrate body and a cross-sectional view taken along the Χ-Χ line thereof. The green sheet 2 for a substrate main body and the green sheet 4 for a protective coating layer may be added with a binder for a substrate body for a glass powder and a ceramic filler and a glass ceramic composition for a protective coating, and a plasticizer, a dispersant, and the like may be added as needed. Solvents, etc. &quot; 周制黎'. In the case of the green sheet 8 for the frame, a binder is added to the glass ceramic composition for the frame containing the glass powder and the ceramic filler, and a plasticizer, a dispersant, a solvent or the like is added as needed to prepare a slurry. Then, the prepared slurry is formed into a sheet shape of a predetermined shape by a knife-forming method or the like. The glass powder of the glass ceramic composition for the substrate body used for the production of the green sheet for the substrate main body 2 and the green sheet 4 for protective coating (hereinafter referred to as "breaking powder for the substrate body") is not limited, but is preferably Use glass transition temperature (Tg) 18 201212295 Above 550C and below 700 °C. If the glass transition temperature (Tg) is less than 550 C, it may be difficult to remove the grease. If it exceeds 7 〇〇, the shrinkage start temperature will increase and the dimensional accuracy will decrease. Also, it should be at 800. (: above and 880. (: The following crystals are precipitated after calcination. When no crystals are precipitated, there is a fear that sufficient mechanical strength may not be obtained. Further, the crystallization peak temperature (Tc) measured by DTA (differential thermal analysis) is preferably When the crystallization peak temperature (Tc) exceeds 880. (:, there is a fear that the dimensional accuracy is lowered. The glass powder for the substrate body described above preferably contains, for example, 57 μM% or more and 65 mol%/〇. The above-mentioned Si〇2, 13 mol% or more and i8 mol% or less of B2〇3, 9 mol% or more and 23 mol% or less of CaO, 3 mol% or more and 8 mol% or less of AbO3, totaling 〇5 m〇i% or more and 6 m〇 Below i%, at least one selected from the group consisting of K2〇 and NasO. The above described one can easily improve the flatness of the surface of the substrate body 2. Here, 'Si〇2 is glass The network structure is formed. When the content of si〇2 is less than 57 mol%, it is difficult to obtain a stable glass, and the chemical durability may be lowered. When the content of Si02 exceeds 65 mol%, the glass is melted. Temperature or glass transition temperature (Tg) may be too high. The content of si〇2 should be 58 mol% or more, preferably 59 mol% or more, more preferably 6 mol% or more. Further, the content of SiO 2 is preferably 64 mol% or less, more preferably 63 mol% or less. B2〇3 is a network structure of glass. When the content of 〇3 is less than 13 mol%, the glass melting temperature and glass transition temperature (Tg) may be too high. However, when the content of B2〇3 exceeds 18 mol%, it may be difficult to obtain stable glass. And the chemical durability may be lowered. The content of B2〇3 is preferably 19 mol% or more, more preferably 15 mol% or more, and the content of B2〇3 is preferably 17 mol% or less, and 16 mol% or less. Better.

Al2〇3係提高玻璃之穩定性、化學上耐久性及強度而添 加者。Al2〇3之含量在小於3mol%時，玻璃恐有不穩定之虞。 而，Al2〇3之含量在超過8mol%時，玻璃溶融溫度或玻璃轉 化溫度(Tg)恐有過高之虞。Al2〇3之含量宜在4mol%以上， 5mol°/〇以上則更佳。且，Al2〇3之含量宜在7mol%以下，而 6mol%以下則更佳。Al2〇3 is added to improve the stability, chemical durability and strength of glass. When the content of Al2〇3 is less than 3 mol%, the glass may be unstable. On the other hand, when the content of Al2〇3 exceeds 8 mol%, the glass melting temperature or the glass transition temperature (Tg) may be excessively high. The content of Al2〇3 is preferably 4 mol% or more, more preferably 5 mol%/〇 or more. Further, the content of Al2?3 is preferably 7 mol% or less, and more preferably 6 mol% or less.

CaO係提高玻璃之穩定性及結晶之析出性，並降低玻 璃熔融溫度或玻璃轉化溫度(Tg)而添加者。CaO之含量在小 於9mol%時，玻璃熔融溫度恐有過高之虞。而，CaO之含量 在超過23mol%時，玻璃恐有不穩定之虞。CaO之含量宜在 12mol%以上’ 13mol%以上則更佳，14mol%以上尤佳。且， CaO之含量宜在22mol°/〇以下，而21mol%以下則更佳， 20mol%以下尤佳。 K20、Na20係降低玻璃轉化溫度(Tg)而添加者。K20及 Na2〇之總計含量在小於〇.5mol%時，玻璃熔融溫度或玻璃 轉化溫度(Tg)恐有過高之虞。而，K20及Na20之總計含量在 超過6mol%時，恐有化學上耐久性尤其係耐酸性會降低， 電絕緣性亦會降低之虞。K_2〇及Na2〇之總計含量宜在 0.8mol%以上且5mol%以下。 另，基板本體用玻璃粉末非必限於僅由上述成分構成 者，而可在滿足玻璃轉化溫度(Tg)等之諸多特性之範圍内 含有其它成分。含有其它成分時，其總計含量宜在l〇m〇l〇/0 ⑧ 20 201212295 以下。 基板本體用破璃粉末可藉溶融依上述之麵組成而混 合之玻璃闕來製成玻璃，域乾磨法或_法磨碎上述 玻璃而製得。採用濕磨法時，宜使用水作為溶劑。研磨機 則可例舉諸如輥磨機、球磨機、喷射磨機等。 基板本體用玻璃粉末之篇粒徑㈣宜為〇一以上 且2μηι以下。基板本體用玻璃粉末之5〇%粒裎在小於 時，玻璃财容W結而不Μ行處理，且難以使其均勾 分散。而’基板本體用玻璃粉末之观粒徑若超過一，則 恐有發生玻璃軟化溫度之昇高及燒結不足之虞。粒徑之調 整可藉由諸如磨碎後視需要進行分級而進行之。另，本說 明書中，粒徑係指藉採用雷射繞射、散射法之粒徑測定裝 置測得之值。 另，陶瓷填料可使用迄今LTCC基板(低溫同時焙燒陶 瓷基板)之製造所使用者，而無特別之限制，諸如可適當使 用氧化鋁粉末、氧化錘粉末或氧化鋁粉末與氧化錯粉末之 混合物。陶瓷填料之50%粒徑①別）宜為諸如〇.5μιη以上且 4μιη以下。 將上述基板本體用玻璃粉末與陶瓷填料，依基板本體 用玻璃粉末30質量％以上且5〇質量％以下、陶曼填料5〇質量 %以上且7〇質量％以下之比例加以調配、混合，即可製得基 板本體用玻璃陶瓷組成物。 另，如前所述，製造保護塗層用生片4所使用之保護塗 層用玻璃陶瓷組成物亦可使用與基板本體用玻璃陶竟組成CaO is added to improve the stability of glass and the precipitation of crystals, and to lower the glass melting temperature or glass transition temperature (Tg). When the content of CaO is less than 9 mol%, the glass melting temperature may be too high. On the other hand, when the content of CaO exceeds 23 mol%, the glass may be unstable. The content of CaO is preferably 12 mol% or more and more preferably 13 mol% or more, and more preferably 14 mol% or more. Further, the content of CaO is preferably 22 mol/min or less, more preferably 21 mol% or less, and particularly preferably 20 mol% or less. K20 and Na20 are added to lower the glass transition temperature (Tg). When the total content of K20 and Na2 is less than 〇.5 mol%, the glass melting temperature or the glass transition temperature (Tg) may be too high. On the other hand, when the total content of K20 and Na20 is more than 6 mol%, chemical durability, particularly acid resistance, may be lowered, and electrical insulation may be lowered. The total content of K 2 〇 and Na 2 宜 is preferably 0.8 mol% or more and 5 mol% or less. Further, the glass powder for the substrate main body is not limited to being composed only of the above components, and other components may be contained within a range satisfying various characteristics such as glass transition temperature (Tg). When other components are contained, the total content thereof is preferably below l〇m〇l〇/0 8 20 201212295. The glass powder for the substrate body can be made by melting a glass crucible which is mixed according to the above-mentioned surface composition, and is obtained by dry grinding or grinding the glass. When using the wet milling method, water should be used as the solvent. The grinder may, for example, be a roll mill, a ball mill, a jet mill or the like. The particle size (four) of the glass powder for the substrate body is preferably one or more and two or less. When the 〇5裎% 裎 of the glass powder for the substrate body is less than, the glass is not processed, and it is difficult to disperse it. On the other hand, if the apparent particle diameter of the glass powder for the substrate body exceeds one, there is a fear that the glass softening temperature is increased and the sintering is insufficient. The adjustment of the particle size can be carried out by fractionation such as grinding and rear view. In addition, in the present specification, the particle size refers to a value measured by a particle size measuring device using a laser diffraction or scattering method. Further, the ceramic filler can be used for the manufacture of the LTCC substrate (low temperature simultaneous baking ceramic substrate), and is not particularly limited, and for example, alumina powder, oxidized hammer powder or a mixture of alumina powder and oxidized powder can be suitably used. The 50% particle diameter of the ceramic filler is preferably 〇.5μηη or more and 4μηη or less. The glass powder for the substrate main body and the ceramic filler are blended and mixed according to the ratio of the glass powder of 30% by mass or more and 5% by mass or less, and the Taman fillers of 5 〇 by mass or more and 7 〇 by mass or less. A glass ceramic composition for the substrate body can be obtained. Further, as described above, the glass ceramic composition for the protective coating layer used for producing the green sheet for protective coating layer can also be used as the glass ceramic body for the substrate body.

S 21 201212295 物不同之玻璃陶瓷組成物。上述玻璃陶瓷組成物宜為諸如 在基板本體用玻璃陶瓷組成物中使用相同之玻璃粉末，而 就陶究填料係使用氧化鋁粉末與氧化锆粉末之混合物。氧 化紹粉末與氧化锆粉末之混合物則宜為氧化鋁粉末：氧化 鍅粉末之混合比例依質量比而為90: 10〜70:30之混合物。 又，玻璃粉末與上述陶瓷填料之混合比例宜依質量比而為 35 : 75-50 : 50 ° 而，製造框體用生片8所使用之框體用玻璃陶瓷組成物 之組成可與基板本體用玻璃陶瓷組成物不同，亦可相同。 然而，如前所述，為使框體8對發光元件11所發出之光為透 明，而宜如下所述’就框體用玻璃陶瓷組成物使用與基板 本體用玻璃陶瓷組成物不同之組成。 框體用玻璃陶瓷組成物中之玻璃粉末（以下稱為「框體 用玻璃粉末」）宜含有諸如75mol°/〇以上且85mol°/〇以下之 Si〇2' lOmol%以上且20mol%以下之B2O3、總計2mol%以下 之選自於K20及Na20中之至少一種。 框體用玻璃粉末亦與基板本體用玻璃粉末相同，可藉 嫁融法製造之’並藉乾磨法或濕磨法加以磨碎而製得。又， 框體用玻璃粉末之50%粒徑(Dso)亦與基板本體用玻璃粉末 之50%粒徑(Dso)相同，宜為〇·5μιη以上且2μιη以下。 又’框體用玻璃粉末中，陶瓷填料可適當使用選自戈 由氧化鋁粉末、氧化鍅粉末、氧化鈦粉末及莫來石於 (mullite powder)所構成群組中之至少丨種所組成之填料，。 如氧化銘粉末、氧化錄粉末，或氧化銘粉末與氧化齡於S 21 201212295 Different glass ceramic compositions. The above glass ceramic composition is preferably such that the same glass powder is used for the glass ceramic composition for the substrate body, and a mixture of the alumina powder and the zirconia powder is used for the ceramic filler. The mixture of the oxidized powder and the zirconia powder is preferably an alumina powder: the mixture ratio of the cerium oxide powder is 90:10 to 70:30 by mass ratio. Further, the mixing ratio of the glass powder to the ceramic filler is preferably 35:75-50:50 ° by mass ratio, and the composition of the glass ceramic composition for the frame used for manufacturing the green sheet 8 for the frame can be combined with the substrate body. The composition of the glass ceramics may be the same or the same. However, as described above, in order to make the light emitted from the light-emitting element 11 by the frame 8 transparent, it is preferable to use a composition different from the glass-ceramic composition for the substrate body for the glass ceramic composition for the frame. The glass powder in the glass ceramic composition for a frame (hereinafter referred to as "glass powder for a frame") preferably contains, for example, 75 mol / 〇 or more and 85 mol / 〇 or less of Si 〇 2 ll mol% or more and 20 mol% or less. B2O3, in total of 2 mol% or less, is selected from at least one of K20 and Na20. The glass powder for the frame is also the same as the glass powder for the substrate body, and can be produced by the method of "melting and melting" and grinding by dry grinding or wet milling. Further, the 50% particle diameter (Dso) of the glass powder for the frame is also the same as the 50% particle diameter (Dso) of the glass powder for the substrate, and is preferably 〇5 μm or more and 2 μm or less. Further, in the glass powder for a frame, the ceramic filler may be suitably composed of at least one selected from the group consisting of alumite powder, cerium oxide powder, titanium oxide powder, and mullite powder. filler,. Such as oxidized powder, oxidized powder, or oxidized powder and oxidized age

22 201212295 之混合物。陶竟填料之50%粒徑(D5G)宜為諸如0.5μπι以上且 4μηι以下。 框體用玻璃陶瓷組成物若包含玻璃粉末80質量％以 上，則焙燒框體用生片後，因可輕易製得含有玻璃80質量 %以上之框體，故較為適用。框體用玻璃陶瓷組成物中， 玻璃粉末若占80質量％以上，其餘則使用陶瓷填料或矽石 填料之至少任一單種則更佳。 框體用玻璃陶瓷組成物以由框體用玻璃粉末及陶瓷填 料或矽石填料之至少任一單種所構成，且依框體用玻璃粉 末為90質量％以上且95質量％以下、陶瓷填料或矽石填料之 總合計量為5質量％以上且10質量％以下之比例加以調配、 混合，則尤佳。 其次，可藉由於依上而製得之玻璃陶瓷組成物中添加 黏結劑，並視需要而添加可塑劑、分散劑、溶劑等調製漿 料。 黏結劑可例舉諸如聚乙烯丁醛、丙烯酸樹脂等。可塑 劑可例舉諸如鄰苯二甲酸二丁酯、鄰苯二甲酸二辛酯、鄰 苯二甲酸丁苄酯等。且，溶劑可使用甲苯、二甲苯、2-丙 醇、2-丁醇等之有機溶劑。 將如上而製得之漿料藉刮刀成膜法等加以成形、乾燥 成預定形狀之片狀，以製造基板本體用生片2、保護塗層用 生片4及框體用生片8。另，製造框體用生片8時，則藉鑽孔 機等進行鑽孔，預先形成框體8之形狀。 (Β1)導體膏層形成步驟22 201212295 mixture. The 50% particle diameter (D5G) of the ceramic filler is preferably, for example, 0.5 μm or more and 4 μm or less. When the glass ceramic composition of the frame body contains 80% by mass or more of the glass powder, it is preferable to use a green sheet for firing the frame, since the frame body containing 80% by mass or more of the glass can be easily obtained. In the glass ceramic composition for a frame, if the glass powder accounts for 80% by mass or more, it is more preferable to use at least one of a ceramic filler or a vermiculite filler. The glass ceramic composition for a frame is composed of at least one of a glass powder for a frame, a ceramic filler, or a vermiculite filler, and the glass filler for the frame is 90% by mass or more and 95% by mass or less, and the ceramic filler is used. It is especially preferable that the total amount of the vermiculite filler is adjusted or mixed in a ratio of 5% by mass or more and 10% by mass or less. Next, a binder may be added to the glass ceramic composition obtained by the above, and a plasticizer, a dispersant, a solvent or the like may be added as needed to prepare a slurry. The binder may, for example, be polyvinyl butyral, acrylic resin or the like. The plasticizer may, for example, be dibutyl phthalate, dioctyl phthalate or butyl benzyl phthalate. Further, as the solvent, an organic solvent such as toluene, xylene, 2-propanol or 2-butanol can be used. The slurry obtained as described above is molded into a predetermined shape by a doctor blade forming method or the like to produce a green sheet for a substrate main body 2, a green sheet for a protective coating layer 4, and a green sheet 8 for a frame. When the green sheet 8 for the frame is manufactured, the hole is drilled by a drill or the like to form the shape of the frame 8 in advance. (Β1) Conductor paste layer formation step

S 23 201212295 導體膏層形成步驟中，係於(A1)步驟中製得之基板本 體用生片2及保護塗層用生片4之預定位置上形成預定之導 體膏層。 第3(a)~3(d)圖係模式地顯示導體膏層形成步驟者。第 3(a)及3(b)圖乃分別顯示導體膏層形成後之保護塗層用生 片4之平面圖及沿行其X-X線之截面圖。第3(c)及3(d)圖乃分 別顯示導體膏層形成後之基板本體用生片2之平面圖及沿 行其X-X線之截面圖。 如第3(a)及3(b)圖所示，就保護塗層用生片4於預定之2 部位形成用於構成貫通導體7之一部分之貫通導體用膏層 72。其次，於可供搭載發光元件11之面上呈大致長方形（意 指目視基準下為長方形，以下亦同）而形成元件連接端子用 膏層5，以覆蓋貫通導體用膏層72。 如第3(c)及3(d)圖所示，就基板本體用生片2於預定之2 部位形成用於構成自主面21貫通至背面22之貫通導體7之 一部分之貫通導體用膏層71。又，在基板本體用生片2之背 面22上形成與貫通導體用膏層7丨電性連接之外部連接端子 用膏層6。再，於基板本體用生片2之主面21上，在基板本 體用生片2之主面21之周緣部及配設有一對貫通導體71之 部分與其周圍附近以外之領域’形成包含含銀之金屬材料 之散熱層用膏層3。 元件連接端子用膏層5、外部連接端子用膏層6、貫通 導體用膏層7卜72及散熱層用膏層3之形成方法可舉出藉網 印法來塗布、充填導體膏之方法。又，可調整所形成之元 ⑧ 24 201212295 件連接端子用膏層5及外部連接端子用膏層6、散熱層用膏 層3之膜厚，以使最終製得之元件連接端子5、外部連接端 子6及散熱層3之膜厚形成預定之膜厚。 導體膏可使用對諸如以銅、銀或金等為主成分之金屬 粉末添加乙基纖維素等之媒液，並視需要添加溶劑等而構 成膏狀者。另，上述金屬粉末宜使用銀所構成之金屬粉末、 銀與白金所構成之金屬粉末，或銀與鈀所構成之金屬粉末。 (C1)積層步驟 積層步驟中，係將(B1)步驟中製得之基板本體用生片 2、保護塗層用生片4及框體用生片8加以積層。 第3(e)及3(f)圖係模式地顯示積層步驟者，乃分別顯示 積層步驟後之未燒結發光元件用基板丨之平面圖及沿行其 X-X線之截面圖。 在(B1)步驟中所製得之附導體膏層基板本體用生片2 之主面21上，積層附導體膏層保護塗層用生片4,而使形成 有元件連接端子用膏層5之面（搭載面）21a朝上。進而，於其 上積層（A1)步驟中製得之框體用生片8而製得未燒結發光 元件用基板1。 (D1)焙燒步驟 焙燒步驟中，將在800〜88(TC下焙燒未燒結發光元件用 基板1。 就(C1)步驟中製得之未燒結發光元件用基板丨視需要 而進行去脂（去黏結劑）以去除黏結劑等，而焙燒玻璃陶瓷組 成物等。In the conductor paste layer forming step of S 23 201212295, a predetermined conductor paste layer is formed at a predetermined position of the green sheet 2 for the substrate body and the green sheet 4 for protective coating obtained in the step (A1). The third (a) to the third (d) diagram schematically shows the conductor paste layer forming step. Figs. 3(a) and 3(b) are a plan view showing the green sheet 4 for protective coating after the formation of the conductor paste layer, and a cross-sectional view taken along line X-X thereof. Figs. 3(c) and 3(d) are plan views showing the green sheet 2 for the substrate body after the formation of the conductor paste layer, and a cross-sectional view taken along line X-X thereof. As shown in Figs. 3(a) and 3(b), the green sheet for protective coating 4 is formed with a paste layer 72 for a through conductor for forming a part of the through conductor 7 at a predetermined portion. Then, the element connection terminal paste layer 5 is formed to have a substantially rectangular shape on the surface on which the light-emitting element 11 can be mounted (that is, a rectangular shape under the visual basis, and the same applies hereinafter) to cover the through-conductive paste layer 72. As shown in Figs. 3(c) and 3(d), the green sheet for the substrate main body 2 is formed with a paste layer for a through conductor for forming a portion of the through conductor 7 through which the autonomous surface 21 penetrates to the back surface 22 at two predetermined portions. 71. Further, a paste layer 6 for external connection terminals electrically connected to the through-conductor paste layer 7 is formed on the back surface 22 of the green sheet for substrate main body 2. Further, on the main surface 21 of the green sheet for the substrate main body 2, the peripheral portion of the main surface 21 of the green sheet for the substrate main body 2 and the portion where the pair of through conductors 71 are disposed and the vicinity thereof are formed to contain silver. The paste layer 3 for the heat dissipation layer of the metal material. The method for forming the element connection terminal paste layer 5, the external connection terminal paste layer 6, the through conductor paste layer 72, and the heat dissipation layer paste layer 3 is a method of applying and filling a conductor paste by a screen printing method. Further, the thickness of the formed paste layer 5 for the connection terminal, the paste layer 6 for the external connection terminal, and the paste layer 3 for the heat dissipation layer can be adjusted so that the finally obtained component connection terminal 5 and external connection can be adjusted. The film thickness of the terminal 6 and the heat dissipation layer 3 is formed to have a predetermined film thickness. For the conductor paste, a vehicle liquid such as ethyl cellulose, which is mainly composed of copper, silver or gold, may be added, and a solvent or the like may be added as needed to form a paste. Further, as the metal powder, a metal powder composed of silver, a metal powder composed of silver and platinum, or a metal powder composed of silver and palladium is preferably used. (C1) Lamination step In the laminating step, the green sheet for the substrate body obtained in the step (B1), the green sheet for protective coating 4, and the green sheet for the frame are laminated. In the third (e) and third (f) drawings, the laminating step is shown in a schematic manner, and the plan view of the unsintered light-emitting device substrate 后 after the lamination step and the cross-sectional view taken along line X-X thereof are respectively shown. On the main surface 21 of the green sheet 2 for the conductor paste layer substrate body obtained in the step (B1), the conductive paste layer for protecting the coating layer is laminated, and the paste layer 5 for forming the element connection terminal is formed. The surface (mounting surface) 21a faces upward. Further, the green sheet 8 for a frame obtained in the step (A1) is laminated to obtain a substrate 1 for an unsintered light-emitting element. (D1) In the baking step, the substrate 1 for unsintered light-emitting element is fired at 800 to 88 (TC). The substrate for the unsintered light-emitting device obtained in the step (C1) is degreased (see The binder is used to remove the binder or the like to fire the glass ceramic composition or the like.

S 25 201212295 去脂係在諸如5〇〇°C以上且600°C以下之溫度下持續i 小時以上且10小時以下。去脂溫度在未達5〇(rc或去脂時間 在未達1小時時，恐有無法充分去除黏結劑等之虞。而，去 脂溫度為600°C左右，去脂時間為1〇小時左右時，則可充分 去除黏結劑等，若超出該等條件，則恐有反致生產率等之 降低之虞。 又’培燒若僅考量基板本體2及框體8之緻密構造之獲 致與生產率，則可在80(TC〜93CTC之溫度範圍内調整適當之 時間而進行之。然而’本實施形態中，因係使用包含含銀 之金屬粉末之金屬膏作為散熱層用金屬膏，故焙燒溫度若 超過880°C，恐有將發生過度焙燒收縮而無法維持預定形狀 之虞。因此，宜在800°C〜880。(：之溫度範圍内適當調整時間。 具體而言，宜在850°C以上且880。(：以下之溫度下持續 20分鐘以上且60分鐘以下，在860°C以上且880°C以下之溫 度下進行則尤佳。焙燒溫度若未達800°C，則恐有無法獲致 具緻密構造之基板本體2及框體8之虞。 如此，雖可焙燒未燒結發光元件用基板1而獲致發光元 件用基板1，但焙燒後，亦可視需要而配設鍍金層等通常在 發光元件用基板中用於保護導體之導電性保護膜，以覆蓋 元件連接端子5及外部連接端子6之整體。 以上，雖已說明本實施形態之發光元件用基板之製造 方法，但基板本體用生片2非必由單一之生片所構成’亦可 為積層複數片生片而成者。且，各部之形成順序等亦可在 發光元件用基板之製造之可行範圍内適度進行變更。 26 ⑧ 201212295 (第1實施形態之變形例） 以下’將說明第1實施形態之變形例之發光元件用基 板。本變形例之發光元件用基板及發光裝置中，框體係由 含有矽石填料之玻璃粉末燒結體所構成。本變形例之發光 元件用基板除框體用生片8之玻璃陶瓷組成物之組成外，可 均與第1實施形態相同。 本變形例之框體8用生片之玻璃陶瓷組成物之框體用 玻璃粉末亦可具有與第1實施形態之玻璃陶瓷組成物之框 體用玻璃粉末相同之組成。 然而’第1實施形態之框體用玻璃陶瓷組成物之玻璃粉 末因玻璃轉化溫度（Tg)為55〇t：以上且700°c以下，故在 800 C以上且880°C以下焙燒後，可能發生框體8用生片之軟 化，框體8之高度尺寸H1小於所期望之高度尺寸等，會有框 體8之形狀與所期望之形狀不同之問題。 因此，框體用玻璃陶瓷組成物宜含有藉超微粒子高熱 法製成之Aerosil(日本AEROSIL工業出品）等之矽石填料來 取代陶瓷填料。藉此’即可避免框體8之形狀改變。 (第2實施形態） 以下參照第4圖，說明第2實施形態之發光元件用基板 及發光裝置。第2實施形態為於第1圖中不設散熱層3及保護 塗層4之形態’基板本體則由基板本體用生片所構成。第4 圖係顯示本實施形態之發光元件用基板1&amp;及使用該發光元 件用基板la之發光裝置1 〇a之一例之平面圖（第4(a)圖）及沿 行其X-X線之截面圖（第4(b)圖）。另，第4圖中，已就與第1S 25 201212295 The degreasing system is maintained at a temperature of, for example, 5 〇〇 ° C or more and 600 ° C or less for i hours or more and 10 hours or less. When the degreasing temperature is less than 5 〇 (rc or degreasing time is less than 1 hour, there is a fear that the binder cannot be sufficiently removed. However, the degreasing temperature is about 600 ° C, and the degreasing time is 1 hour. When it is left and right, the binder and the like can be sufficiently removed, and if these conditions are exceeded, there is a fear that the productivity and the like are lowered. In addition, the productivity and productivity of the dense structure of the substrate body 2 and the frame 8 are considered only. The temperature can be adjusted within a temperature range of 80 (TC to 93 CTC). However, in the present embodiment, since a metal paste containing a metal powder containing silver is used as a metal paste for a heat dissipation layer, the baking temperature is used. If it exceeds 880 ° C, there is a fear that over-baking shrinkage will occur and the predetermined shape cannot be maintained. Therefore, it is preferable to adjust the time appropriately in the temperature range of 800 ° C to 880. (In particular, it is preferably 850 ° C. The above is 880. (: The temperature below is 20 minutes or longer and 60 minutes or shorter, and it is particularly preferable to carry out the temperature at 860 ° C or higher and 880 ° C or lower. If the baking temperature is less than 800 ° C, there is a fear that it may not be possible. Obtaining the substrate body 2 and the frame with the dense structure In this case, the substrate 1 for the light-emitting element can be obtained by firing the substrate 1 for the unfired light-emitting device. However, after the firing, a gold plating layer or the like may be disposed as needed, and the conductive material for protecting the conductor is usually used in the substrate for a light-emitting element. The protective film covers the entire element connection terminal 5 and the external connection terminal 6. Although the method of manufacturing the substrate for a light-emitting element of the present embodiment has been described above, the green sheet for the substrate main body 2 is not necessarily composed of a single green sheet. In addition, it is also possible to form a plurality of laminated green sheets. The order of formation of the respective portions can be appropriately changed within the feasible range of the manufacture of the substrate for a light-emitting element. 26 8 201212295 (Modification of the first embodiment) In the light-emitting element substrate and the light-emitting device according to the modification of the present invention, the frame system is composed of a glass powder sintered body containing a vermiculite filler. The substrate is the same as the first embodiment except that the frame is made of the glass ceramic composition of the green sheet 8. The frame 8 of the present modification is made of green glass. The glass powder for the frame of the glass ceramic composition may have the same composition as the glass powder for the frame of the glass ceramic composition of the first embodiment. However, the glass powder of the glass ceramic composition for the frame of the first embodiment. Since the glass transition temperature (Tg) is 55 〇t: or more and 700 ° C or less, after firing at 800 C or more and 880 ° C or less, softening of the green sheet of the frame 8 may occur, and the height dimension H1 of the frame 8 may occur. Less than the desired height dimension, etc., there is a problem that the shape of the frame 8 is different from the desired shape. Therefore, the glass ceramic composition for the frame body preferably contains Aerosil (produced by Japan AEROSIL Co., Ltd.) which is made by ultrafine microcalorimetry. The vermiculite filler is substituted for the ceramic filler, thereby avoiding the shape change of the frame 8. (Second Embodiment) A substrate for a light-emitting element and a light-emitting device according to a second embodiment will be described below with reference to Fig. 4 . In the second embodiment, the heat dissipation layer 3 and the protective coating layer 4 are not provided in Fig. 1. The substrate body is composed of a green sheet for the substrate main body. Fig. 4 is a plan view (Fig. 4(a)) showing an example of the light-emitting device substrate 1&amp; and the light-emitting device 1a using the light-emitting element substrate 1a, and a cross-sectional view taken along line XX thereof. (Fig. 4(b)). In addition, in Figure 4, it is already with the first

S 27 201212295 實施形悲中參照第1圖說明之部分對相同之部分附以相同 之標號’而省略其說明。 本實施形態之發光元件用基板i a亦如諸如第4圖所 示，係可搭載1個發光元件u。與第i實施形態相同，發光 元件用基板la藉接合線12電性連接發光元件U，並設有密 封層13以覆蓋該等發光元件丨丨與接合線12而加以使用作為 發光裝置10a。 發光元件用基板la包含大致平板狀之基板本體2及設 於基板本體2上之框體8。 本實施形態之基板本體2除未設有第1實施形態之基板 本體2之散熱層及保護塗層以外，均與第丨實施形態之基板 本體2相同。 框體8亦可與第1實施形態相同，即，框體8係由含有玻 璃粉末與陶瓷填料之框體用玻璃陶瓷組成物之燒結體所構 成，並於基板本體2之主面21上設成圍繞主面21上所搭載之 發光元件11。另，本實施形態中，主面21相當於本發明之 搭載面。 與第1實施形態相同，框體8宜對發光元件丨丨所發出之 可見光為透明。框體8之材質可適當舉出與第丨實施形態相 同之材質。又，框體8—如諸如第4(b)圖中之光路徑L所示， 且自内側側方朝框體8入射之可見光穿透框體8後之穿透光 相對入射之可見光之穿透率在8〇%以上。進而，框體8則宜 自内側侧方朝框體8入射之包含4〇〇〜800nm之波長領域之 光之可見光穿透框體8後之穿透光相對入射之可見光在 ⑧ 28 201212295 400〜800nm之波長領域内之平均穿透率為80。/〇以上。又，框 體8與密封層13之折射率差宜為0.1以下。 又’本實施形態中，框體8之高度尺寸H1宜為自主面21 至主面21上所搭載之發光元件u上面之距離H0之1.3倍以 上且5倍以下。藉此，即可輕易調整發光裝置i〇a之色度， 並避免出光效率之降低。 另，如第4(b)圖所示，本實施形態中，框體8之高度尺 寸H1乃主面21至框體8上面之高度尺寸。又，主面21至發光 元件11上面之距離H0乃主面21至發光元件11上面之距離。 又’若設基板本體2之熱膨脹係數為〇[1(口口111/。〇，而設 框體8之熱膨脹係數為a2(ppm/°c)，本實施形態亦與第1實施 形態相同，宜使框體8滿足a,—條件。 又’本實施形態之發光裝置10a係藉聚矽氧固晶劑等之 固晶劑而於本實施形態之發光元件用基板la之主面21上搭 載有LED元件等之發光元件11者。 基板本體2之主面21侧上亦可設置反射層，以儘可能反 射發光元件所發出之光。反射膜之構成材料就經濟性及反 射率方面而言宜使用銀或銀合金。反射膜使用銀時，為避 免其表面發生銀之氧化或硫化，亦可設成以玻璃膜覆蓋銀 反射膜。 以下，參照第5及6圖，並以第4圖所示之發光裝置i〇a 之發光元件用基板la為例，來說明本實施形態之發光元件 用基板之製造方法。第5及6圖係模式地顯示第4圖所示之發 光元件用基板之製造程序之一部分者。 29 201212295 本實施形態之發光元件用基板可藉諸如包含以下之 ㈣步驟〜(D2)步驟之製造方法而製成。且，以下就製造所 使用之構件附以與成品之構件相同之標號而加以說明。 (A2)生片製作步驟 生片製作步驟中，將製造用於構成基板本體2之基板本 體用生片2及用於構成框體8之框體用生片8。 第5圖係模式地顯示生片製作步驟者。第$⑷圖及第s(b) 圖乃分別顯示框體用生片8之平面_及沿行其Χ·Χ線之截面 圖。第5(c)圖及第5(d)圖乃分別顯示基板本體用生片2之平 面圖及沿行其X-X線之截面圖。 基板本體用生片2與第1實施形態之(Ai)步驟相同，係 對基板本體用玻璃喊'组·添加減劑，並減要添加 可塑劑、分散劑、溶劑等而調製襞料。且，框體用生片8與 第1實施形態之(A1)步驟相同’係對框體时璃岐組成物 添加黏結劑，並視需要添加可_、分散劑、溶劑等而調 製漿料。其次，則將調成之㈣_刀成膜法等加以成形、 乾燥而製成預定形狀之片狀。 將如上而製得之漿料藉刮刀成膜法等加以成形、乾燥 成預定雜之脉，⑽成基板本翻生片2及框體用生片 8 ° (B2)導體膏層形成步驟 導體膏層形成步驟中，將於(A2)步驟中製得之基板本 體用生片2之就位置上形成财之導體膏層。第6(咖及 第6__式地顯示導體f層形成步驟者，乃分別顯示導 ⑧ 30 201212295 體膏層形成後之基板本體用生片2之平面圖及沿行其χ_χ線 之載面圖。 與第1實施形態之(Β1)步驟相同，如第6(a)圖及第6(b) 圖所示，在基板本體用生片2上於預定之2部位形成用於構 成自主面21貫通至背面22之貫通導體7之貫通導體用膏層 7。又，於基板本體用生片2之背面22上則形成與貫通導體 用膏層7電性連接之外部連接端子用膏層6。 元件連接端子用膏層5、外部連接端子用膏層6及貫通 導體用膏層7之形成方法與第1實施形態之(B1)步驟相同， 可舉出藉網印法塗布、充填導體膏之方法。且，導體膏可 與第1實施形態之(B1)步驟相同。 (C2)積層步驟 積層步驟中，將積層（B2)步驟中製得之基板本體用生 片2及框體用生片8。第6(c)圖及第6(d)圖係模式地顯示積層 步驟者，乃分別顯示積層步驟後之未燒結發光元件用基板 la之平面圖及沿行其X-X線之截面圖。 與第1實施形態之(C1)步驟相同，於(B2)步驟中製得之 附導體膏層基板本體用生片2之主面21上，積層（A2)步驟中 製得之框體用生片8而製得未燒結發光元件用基板1&amp;。 (D2)焙燒步驟 培燒步驟中’將在800〜88(TC下培燒未燒結發光元件用 基板la。 就(C2)步驟中製得之未燒結發光元件用基板1&amp;，將與 第1實施形態之(D1)步驟相同，視需要而進行去脂以去除黏In the description of the embodiment, the same reference numerals will be given to the same parts, and the description thereof will be omitted. The light-emitting element substrate i a of the present embodiment can also be mounted with one light-emitting element u as shown in Fig. 4 . Similarly to the i-th embodiment, the light-emitting element substrate 1a is electrically connected to the light-emitting element U by the bonding wires 12, and a sealing layer 13 is provided to cover the light-emitting elements 丨丨 and the bonding wires 12 for use as the light-emitting device 10a. The light-emitting element substrate 1a includes a substantially flat substrate body 2 and a frame 8 provided on the substrate body 2. The substrate main body 2 of the present embodiment is the same as the substrate main body 2 of the second embodiment except that the heat dissipation layer and the protective coating layer of the substrate main body 2 of the first embodiment are not provided. Similarly to the first embodiment, the frame 8 is formed of a sintered body of a glass ceramic composition for a frame body containing glass powder and a ceramic filler, and is provided on the main surface 21 of the substrate body 2. The light-emitting element 11 mounted on the main surface 21 is formed. Further, in the present embodiment, the main surface 21 corresponds to the mounting surface of the present invention. As in the first embodiment, the casing 8 is preferably transparent to visible light emitted from the light-emitting element. The material of the frame 8 can be appropriately exemplified as the material of the third embodiment. Further, the frame 8 - as shown by the light path L in Fig. 4 (b), and the visible light incident from the inner side toward the frame 8 penetrates the frame 8 and penetrates the visible light. The penetration rate is above 8〇%. Furthermore, the frame 8 is preferably incident on the frame 8 and is incident on the frame 8 and contains light of a wavelength range of 4 〇〇 to 800 nm. The visible light penetrates the frame 8 and the visible light is incident on the visible light at 8 28 201212295 400~ The average transmittance in the wavelength field of 800 nm is 80. /〇 above. Further, the difference in refractive index between the frame 8 and the sealing layer 13 is preferably 0.1 or less. Further, in the present embodiment, the height H1 of the casing 8 is preferably 1.3 times or more and 5 times or less the distance H0 from the autonomous surface 21 to the upper surface of the light-emitting element u mounted on the main surface 21. Thereby, the chromaticity of the light-emitting device i〇a can be easily adjusted, and the reduction in light-emitting efficiency can be avoided. Further, as shown in Fig. 4(b), in the present embodiment, the height dimension H1 of the casing 8 is the height dimension of the main surface 21 to the upper surface of the casing 8. Further, the distance H0 from the main surface 21 to the upper surface of the light-emitting element 11 is the distance from the main surface 21 to the upper surface of the light-emitting element 11. Further, if the thermal expansion coefficient of the substrate main body 2 is 〇[1 (mouth port 111/.〇, and the thermal expansion coefficient of the frame body 8 is a2 (ppm/°c)), the present embodiment is also the same as the first embodiment. The light-emitting device 10a of the present embodiment is preferably mounted on the main surface 21 of the light-emitting element substrate la of the present embodiment by a die-bonding agent such as a polyoxygen-containing crystallizing agent. There is a light-emitting element 11 such as an LED element. A reflective layer may be provided on the main surface 21 side of the substrate body 2 to reflect the light emitted from the light-emitting element as much as possible. The constituent material of the reflective film is economical and reflective. Silver or a silver alloy is preferably used. When silver is used as the reflective film, in order to avoid oxidation or vulcanization of silver on the surface, a silver film may be covered with a glass film. Hereinafter, reference is made to Figures 5 and 6, and Figure 4 is used. The method of manufacturing the substrate for a light-emitting device of the present embodiment will be described by taking the substrate 1a for a light-emitting device of the light-emitting device i〇a as an example. The substrate for a light-emitting device shown in Fig. 4 is schematically shown in Figs. Part of the manufacturing process. 29 201212295 This embodiment The substrate for a light-emitting element can be produced by, for example, a manufacturing method including the following steps (4) to (D2). Further, the members used for the production will be described with the same reference numerals as the members of the finished product. (A2) In the sheet production step, the green sheet for the substrate main body 2 and the green sheet 8 for the frame body constituting the frame body 8 are manufactured. The fifth embodiment schematically shows the green sheet production step. The $(4) and s(b) diagrams show the plane _ of the green sheet 8 for the frame and the cross-sectional view of the Χ·Χ line along the line, respectively. 5(c) and 5(d) A plan view of the green sheet for the substrate main body 2 and a cross-sectional view taken along the line XX thereof are shown in the same manner. The green sheet 2 for the main body of the substrate is the same as the step (Ai) of the first embodiment. The material is prepared by adding a plasticizer, a dispersant, a solvent, etc., and the green sheet 8 is the same as the step (A1) of the first embodiment. Adhesive, and if necessary, add _, dispersant, solvent, etc. to prepare the slurry. Secondly, it will be adjusted (4) _ knife The film method or the like is formed and dried to form a sheet having a predetermined shape. The slurry obtained as described above is molded by a doctor blade forming method or the like, and dried to form a predetermined vein, and (10) the substrate is turned into a sheet 2 and a frame. Body green sheet 8 ° (B2) conductor paste layer forming step In the conductor paste layer forming step, the substrate body sheet 2 obtained in the step (A2) is formed into a conductive conductor paste layer. (Caf and 6th__________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________ In the first embodiment, the step (1) is the same as that shown in the sixth (a) and sixth (b) drawings, and the main body 2 for the substrate main body is formed at a predetermined portion to form the autonomous surface 21 to penetrate the back surface. The through-conductor paste layer 7 of the through conductor 7 of 22. Moreover, the external connection terminal paste layer 6 electrically connected to the through conductor paste layer 7 is formed on the back surface 22 of the substrate main body green sheet 2. The method of forming the element connection terminal paste layer 5, the external connection terminal paste layer 6, and the through conductor paste layer 7 is the same as the step (B1) of the first embodiment, and coating and filling of the conductor paste by the screen printing method are mentioned. method. Further, the conductor paste can be the same as the step (B1) of the first embodiment. (C2) Lamination step In the laminating step, the green sheet 2 for the substrate body and the green sheet 8 for the frame body obtained in the step (B2) are laminated. 6(c) and 6(d) are diagrams showing the steps of laminating, respectively, showing a plan view of the unfired light-emitting element substrate la after the lamination step and a cross-sectional view taken along line X-X thereof. In the same manner as the step (C1) of the first embodiment, in the main surface 21 of the green sheet 2 for the conductor paste layer substrate obtained in the step (B2), the frame body obtained in the step of laminating (A2) is used. On the sheet 8, an unsintered substrate 1&amp; (D2) In the baking step, the substrate 1a of the unsintered light-emitting device obtained in the step (C2) is fired at 800 to 88 (the TC is not sintered). The step (D1) of the embodiment is the same, and degreasing is performed as needed to remove the stickiness.

31 S 201212295 結劑等，並進行玻璃陶瓷組成物等之焙燒。去脂及焙燒之 條件可與第1實施形態之(D1)步驟相同。 又，與第1實施形態相同，焙燒後，亦可視需要而配設 鍍金層等通常在發光元件用基板中用於保護導體之導電性 保護膜，以覆蓋元件連接端子5及外部連接端子6之整體。 本實施形態中，基板本體用生片2亦非必由單一之生片 所構成，亦可為積層複數片生片而成者。且’各部之形成 順序等亦可在發光元件用基板之製造之可行範圍内適度予 以變更。 又，本實施形態中，雖已就框體由含有陶瓷填料之玻 螭粉末燒結體所構成之例加以說明，但與第1實施形態之變 形例相同，框體亦可由含有矽石填料之玻璃粉末燒結體所 構成。 (第3實施形態） 本實施形態之發光元件用基板及發光裝置係隔著低熔 點玻璃膏積層個別焙燒後之基板本體與框體，再經熱處理 而予以接合而成者。即，焙燒後之基板本體與焙燒後之框 體係隔著低熔點玻璃膏而積層，並經熱處理而接合。 參照第7圖來說明第3實施形態之發光元件用基板及發 光裝置。第7圖係顯示本實施例之發光元件用基板lb及使用 該發光元件用基板lb之發光裝置10b之一例之平面圖（第7(a) 圖）及沿行其X-X線之截面圖（第7(b)圖）。另，第7圖中亦就 與第1實施形態中已參照第1圖說明之部分對相同之部分附 以相同之標號，而省略其說明。 ⑧ 32 201212295 本實施形態之發光元件用基板lb亦如諸如第7圖所 示，可搭幻個發光元件U。與第1實施形態相同，發光元 件用基板關藉接纽u電性賴發光元独，並設有密 封層13以覆蓋該等發光元件n與接合線12，而加以使用作 為發光裝置10b。 發光元件絲糾包含大致平板狀之基板本體2及設 於基板本體2上之框體8。⑼，基板本體2與框娜之間設 有配置低顏玻料並熱處理來接合基板本體2與框體8之 接合層9。 本實施形態之基板本體2可與第i實施形態之基板本體 2相同。即，於基板本體2之主面21上形成有散熱層3，而保 s蔓塗層4則形成可覆蓋散熱層3。且，以保護塗層4之主面21 側之面（積層面）之相反側之面作為搭載面21a。另，此時， 基板本體2、散熱層3及保護塗層4亦總稱為積層基板本體 2a。 接合層9之膜厚宜為20〜80μιη，40〜50μηι則更佳。接合 層9之膜厚若小於2〇μιη，則無法獲致充分之接合強度。而， 若超過50μιη ’則因低熔點玻璃膏熔融將使基板本體2與框 體8之間容易發生位置偏移。另，關於低熔點玻璃膏之原料 組成則留待後述之製造方法再加以說明。 框體8係於基板本體2之搭載面21a側設成圍繞搭載面 21a上所搭載之發光元件丨1。框體8宜對發光元件11所發出 之可見光為透明。框體8之材質則可適當舉出與第1實施形 態及第2實施形態相同之材質。31 S 201212295 Condensation, etc., and baking of glass ceramic composition. The conditions for degreasing and baking can be the same as those of the step (D1) of the first embodiment. In the same manner as in the first embodiment, a conductive protective film for protecting a conductor in a substrate for a light-emitting element, such as a gold plating layer, may be disposed after the firing, so as to cover the component connection terminal 5 and the external connection terminal 6. overall. In the present embodiment, the green sheet for the substrate main body 2 is not necessarily composed of a single green sheet, and may be a laminate of a plurality of green sheets. Further, the order of formation of the respective parts may be appropriately changed within the scope of the manufacture of the substrate for a light-emitting element. Further, in the present embodiment, an example in which the frame body is composed of a sintered glass frit powder containing a ceramic filler has been described. However, as in the modification of the first embodiment, the frame may be made of glass containing a vermiculite filler. It is composed of a powder sintered body. (Third Embodiment) The substrate for a light-emitting element and the light-emitting device of the present embodiment are obtained by laminating a substrate body and a frame body which are individually fired by a low-melting point glass paste layer, and then heat-treating. Namely, the substrate body after baking and the frame system after firing are laminated via a low-melting glass paste, and joined by heat treatment. A substrate for a light-emitting element and a light-emitting device according to a third embodiment will be described with reference to Fig. 7 . Fig. 7 is a plan view showing a light-emitting device substrate 1b of the present embodiment and a light-emitting device 10b using the light-emitting element substrate 1b (Fig. 7(a)) and a cross-sectional view taken along line XX thereof (7th) (b) Figure). In the same manner as in the first embodiment, the same reference numerals are given to the same parts as those in the first embodiment, and the description thereof will be omitted. 8 32 201212295 The substrate lb for a light-emitting element of the present embodiment can also be used as a light-emitting element U as shown in Fig. 7. As in the first embodiment, the substrate for a light-emitting element is electrically connected to the light-emitting element, and a sealing layer 13 is provided to cover the light-emitting element n and the bonding wire 12, and is used as the light-emitting device 10b. The light-emitting element wire correction includes a substantially flat substrate body 2 and a frame 8 provided on the substrate body 2. (9) A bonding layer 9 in which the low-profile glass material is disposed and heat-treated to bond the substrate body 2 and the frame 8 is provided between the substrate body 2 and the frame. The substrate body 2 of the present embodiment can be the same as the substrate body 2 of the i-th embodiment. That is, the heat dissipation layer 3 is formed on the main surface 21 of the substrate body 2, and the heat dissipation layer 3 is formed to cover the heat dissipation layer 3. Further, a surface on the opposite side to the surface (product layer) on the main surface 21 side of the protective coat layer 4 is used as the mounting surface 21a. Further, at this time, the substrate body 2, the heat dissipation layer 3, and the protective coat layer 4 are also collectively referred to as a laminated substrate body 2a. The film thickness of the bonding layer 9 is preferably 20 to 80 μm, and more preferably 40 to 50 μm. If the film thickness of the bonding layer 9 is less than 2 Å μm, sufficient bonding strength cannot be obtained. On the other hand, if it exceeds 50 μm, the positional shift between the substrate body 2 and the frame 8 is liable to occur due to the melting of the low-melting glass paste. Further, the composition of the raw material of the low-melting glass paste will be described later with reference to the production method described later. The casing 8 is provided on the mounting surface 21a side of the substrate main body 2 so as to surround the light-emitting element 丨1 mounted on the mounting surface 21a. The frame 8 is preferably transparent to visible light emitted from the light-emitting element 11. The material of the casing 8 can be appropriately exemplified by the materials of the first embodiment and the second embodiment.

S 33 201212295 又’框體8—如諸如第7(b)圖中之光路徑L所示，宜自 内側側方朝框體8入射之可見光穿透框體8後之穿透光相對 入射之可見光之穿透率在80°/。以上。進而，框體8宜自内側 側方朝框體8入射之包含400〜800nm之波長領域之光之可 見光穿透框體8後之穿透光相對入射之可見光在 400〜800nm之波長領域内之平均穿透率為8〇%以上。又，框 體8與密封層13之折射率差宜為〇.1以下。 又’本實施形態中，框體8之高度尺寸H1宜為自搭載面 21a至搭載面21a上所搭載之發光元件n上面之距離H〇之 1.3倍以上且5倍以下。藉此，即可輕易調整發光裝置1〇b之 色度’並避免出光效率之降低。 另’如第7(b)圖所示，本實施形態中，框體8之高度尺 寸H1乃搭載面21 a(接合層9之下面）至框體8上面之高度尺 寸。又’搭載面21a至發光元件η上面之距離H〇乃搭載面21a 至發光元件11上面之距離。 又，若設基板本體2之熱膨脹係數，而設 框體8之熱膨脹係數為a2(ppmA：)，則本實施形態亦與第i 實施形態相同’宜使框體8滿足a,—條件。 又’本實施形態之發光裝置10b係藉聚矽氧固晶劑等之 固晶劑而於本實施形態之發光元件用基板1 b之搭載面21 a 上搭載有LED元件等發光元件丨丨者。 另’本實施形態中，將就於基板本體2之主面21上形成 有散熱層3及保護塗層4之例加以說明。然而，與第2實施形 怨相同’亦可不在基板本體2之主面21上形成散熱層3及保 34 ⑧ 201212295 護塗層4。此時，框體8係於基板本體2之主面21側設成圍繞 主面21上所搭載之發光元件11。且，發光裝置1〇b係於發光 元件用基板lb之主面21上藉聚矽氧固晶劑等之固晶劑而搭 載有LED元件等發光元件11者。 以下，參照第8及9圖，並以第7圖所示之發光裝置1〇b 之發光元件用基板lb為例，來說明本實施例之發光元件用 基板之製造方法。第8及9圖係模式地顯示第7圖所示之發光 元件用基板之製造程序之一部分者。 本實施形態之發光元件用基板可藉包含諸如以下之 (A3)步驟〜(F3)步驟之製造方法而製成。且，以下將就製造 所使用之構件附以與成品之構件相同之標號而加以說明。 (A3)框體準備步驟 框體準備步驟中，將預先準備框體8。 第8(a)及8(b)圖係模式地顯示框體準備步驟者，乃分別 顯示框體8之平面圖及沿行其χ_χ線之截面圖。 框體8亦可藉單獨培燒框體用生片製作包含玻璃材料 且透明之框體8來準備之。或，亦可藉加讀璃板來準備之。 (B3)生片製作步驟 生片裝作步驟中，將製作構成基板本體2之基板本體用 生片2及構成保護塗層4之保護塗層用生片4。 第8(c)圖至第8(f)圖係、模式地顯示生片製作步驟者。第 8(c)圖及第8(d)U乃分別顯示保護塗層用生片4之平面圖及 沿行其XOC線之截面圖。第8(e)圖及第8⑴圖乃分別顯示基 板本體用生片2之平面圖及沿行其χ_χ線之截面圖。S 33 201212295 Further 'frame 8', as shown by the light path L in Fig. 7(b), the visible light incident from the inner side toward the frame 8 penetrates the frame 8 and is relatively incident. The transmittance of visible light is 80°/. the above. Further, the frame 8 is preferably incident on the frame 8 and the light having a wavelength of 400 to 800 nm is transmitted through the frame 8 and the visible light is incident on the visible light in the wavelength range of 400 to 800 nm. The average penetration rate is above 8〇%. Further, the difference in refractive index between the frame 8 and the sealing layer 13 is preferably 〇.1 or less. In the present embodiment, the height H1 of the casing 8 is preferably 1.3 times or more and 5 times or less the distance H〇 from the mounting surface 21a to the upper surface of the light-emitting element n mounted on the mounting surface 21a. Thereby, the chromaticity of the light-emitting device 1〇b can be easily adjusted and the reduction in light-emitting efficiency can be avoided. Further, as shown in Fig. 7(b), in the present embodiment, the height dimension H1 of the casing 8 is the height dimension of the mounting surface 21a (the lower surface of the bonding layer 9) to the upper surface of the casing 8. Further, the distance H from the mounting surface 21a to the upper surface of the light-emitting element η is the distance from the mounting surface 21a to the upper surface of the light-emitting element 11. Further, if the coefficient of thermal expansion of the substrate body 2 is set and the thermal expansion coefficient of the frame body 8 is a2 (ppmA:), the present embodiment is also the same as the i-th embodiment. It is preferable that the frame 8 satisfy the a-condition. In the light-emitting device 10b of the present embodiment, a light-emitting device such as an LED element is mounted on the mounting surface 21a of the substrate 1b for a light-emitting element of the present embodiment. . In the present embodiment, an example in which the heat dissipation layer 3 and the protective coat layer 4 are formed on the main surface 21 of the substrate main body 2 will be described. However, the same as the second embodiment, the heat dissipation layer 3 and the protective coating layer 4 may not be formed on the main surface 21 of the substrate body 2. At this time, the casing 8 is provided on the main surface 21 side of the substrate main body 2 so as to surround the light-emitting element 11 mounted on the main surface 21. In addition, the light-emitting device 1A is attached to the main surface 21 of the substrate lb for the light-emitting element by a solid-state agent such as a cerium-oxygen crystallizing agent, and a light-emitting element 11 such as an LED element is mounted. In the following, the method of manufacturing the substrate for a light-emitting element of the present embodiment will be described by taking the light-emitting device substrate 1b of the light-emitting device 1b shown in Fig. 7 as an example with reference to Figs. Figs. 8 and 9 show a part of the manufacturing procedure of the substrate for a light-emitting element shown in Fig. 7 . The substrate for a light-emitting element of the present embodiment can be produced by a production method including the steps (A3) to (F3) below. In the following, the components used for manufacturing will be described with the same reference numerals as the components of the finished product. (A3) Frame preparation step In the frame preparation step, the frame 8 is prepared in advance. In the eighth (a) and eighth (b) drawings, the frame preparation step is displayed in a pattern, and the plan view of the frame 8 and the cross-sectional view along the line of the line are shown. The frame 8 can also be prepared by separately forming a frame 8 containing a glass material and a transparent frame by using a green sheet. Or, you can also prepare by reading the glass. (B3) Green sheet production step In the green sheet mounting step, the substrate main sheet 2 constituting the substrate main body 2 and the protective coating green sheet 4 constituting the protective coating layer 4 are produced. The figure 8(c) to the figure 8(f) show the steps of the green sheet making process. Fig. 8(c) and Fig. 8(d) U show a plan view of the green sheet 4 for protective coating and a cross-sectional view along the XOC line thereof, respectively. Fig. 8(e) and Fig. 8(1) show a plan view of the green sheet 2 for the substrate body and a cross-sectional view along the line of the χ_χ line, respectively.

S 35 201212295 基板本體用生片2及保護塗層用生片4與第1實施形離 之㈢步驟相同’係對基板本體用玻璃㈣組成物添㈣ 結劑，並視需要添加可塑劑、分散劑、溶劑等而調製衆料。 其次，則將調成之漿料_刀成膜料加以、乾燥而 製成預定形狀之片狀。 將如上而製得之漿料藉刮刀成膜法等加以成形、乾燥 成預定形狀之片狀’來製成基板本體用生片2及保護塗層用 生片4。 (C3)導體膏層形成步驟 導體膏層形成步驟中，將於(B3)步驟中製得之基板本 體用生片2及保護塗層用生片4之預定位置上形成預定之導 體膏層。 與第3(a)圖及第3(b)圖所說明之第丨實施形態之(B丨）步 驟相同，在保護塗層用生片4上於預定之2部位形成用於構 成貫通導體7之一部分之貫通導體用膏層72。其次，於可供 搭載發光元件11之面上呈大致長方形地形成元件連接端子 用膏層5，以覆蓋貫通導體用膏層72。 又，與第3(c)圖及第3(d)圖所說明之第1實施形態之(B1) 步驟相同，在基板本體用生片2上於預定之2部位形成用於 構成自主面21貫通至背面22之貫通導體7之一部分之貫通 導體用膏層71。再，於基板本體用生片2之背面22上形成與 貫通導體用膏層71電性連接之外部連接端子用膏層6。且’ 在基板本體用生片2之主面21上，於基板本體用生片2之主 面21之周緣部及配設有一對貫通導體71之部分與其周圍附 36 ⑧ 201212295 近以外之領域，形成包含含銀之金屬材料之散熱層用膏層 3 ° 元件連接端子用膏層5、外部連接端子用膏層6及貫通 導體用膏層7之形成方法與第1實施形態之(B1)步驟相同， 可舉出藉網印法而塗布、充填導體膏之方法。又，導體膏 可與第1實施形態之(B1)步驟相同。 (D3)積層步驟 積層步驟中，將積層（C3)步驟中製得之基板本體用生 片2及保護塗層用生片4。 第9(a)圖及第9(b)圖係模式地顯示積層步驟者，乃分別 顯示積層步驟後之未燒結積層基板2 a之平面圖及沿行其 X-X線之截面圖。 與第1實施形態之(C1)步驟相同，於(C3)步驟中製得之 附導體膏層基板本體用生片2之主面21上，積層（C3)步驟中 製得之附導體膏層保護塗層用生片4,而製得未燒結積層基 板2a。 (E3)培燒步驟 焙燒步驟中，將在800〜880°C下焙燒未燒結積層基板2a 而製得積層基板本體2a。就(D3)步驟中製得之未燒結積層 基板2a則與第1實施形態之(D1)步驟相同，視需要而進行去 脂以去除黏結劑等，並焙燒玻璃陶瓷組成物等。去脂及焙 燒之條件則可與第1實施形態之(D1)步驟相同。 (F3)接合步驟 接合步驟中，將隔著低熔點玻璃膏積層焙燒後之積層S 35 201212295 The green sheet 2 for the substrate main body and the green sheet 4 for protective coating are the same as the first step (3). The addition of the fourth (4) composition to the glass for the substrate body (4), and the addition of plasticizer and dispersion as needed. Agents, solvents, etc. to prepare the public. Next, the prepared slurry _ knife-forming material is applied and dried to form a sheet having a predetermined shape. The slurry obtained as described above is formed into a sheet shape of a predetermined shape by a doctor blade forming method or the like to form a green sheet for the substrate main body 2 and a green sheet 4 for protective coating. (C3) Conductor paste layer forming step In the conductor paste layer forming step, a predetermined conductor paste layer is formed at a predetermined position of the green sheet 2 for the substrate body and the green sheet 4 for protective coating layer which are obtained in the step (B3). In the same manner as the step (B丨) of the third embodiment described in the third (a) and third (b), the protective coating green sheet 4 is formed at a predetermined portion to form the through conductor 7. A part of the conductive layer 72 is passed through the conductor. Then, the paste layer 5 for the element connection terminal is formed in a substantially rectangular shape on the surface on which the light-emitting element 11 can be mounted to cover the paste layer 72 for the through-conductor. In the same manner as the step (B1) of the first embodiment described in the third (c) and third (d), the substrate main body sheet 2 is formed on the predetermined two portions for forming the autonomous surface 21 The through-conductor paste layer 71 penetrates to one of the through conductors 22 of the back surface 22. Further, an external connection terminal paste layer 6 electrically connected to the through conductor paste layer 71 is formed on the back surface 22 of the substrate body green sheet 2. Further, in the main surface 21 of the green sheet for the substrate main body 2, the peripheral portion of the main surface 21 of the green sheet for the substrate main body 2 and the portion where the pair of through conductors 71 are disposed and the periphery thereof are attached to the vicinity of 36 8 201212295, A method for forming a heat-dissipating layer paste layer containing a silver-containing metal material, a component connection terminal paste layer 5, an external connection terminal paste layer 6, and a through-conductor paste layer 7, and a step (B1) of the first embodiment Similarly, a method of coating and filling a conductor paste by a screen printing method can be mentioned. Further, the conductor paste can be the same as the step (B1) of the first embodiment. (D3) Lamination step In the lamination step, the green sheet 2 for the substrate body and the green sheet 4 for protective coating are obtained by laminating (C3). The figure 9(a) and the figure 9(b) show the step of laminating in a pattern, and the plan view of the unsintered laminated substrate 2a after the lamination step and the cross-sectional view taken along line X-X thereof are respectively shown. In the same manner as the step (C1) of the first embodiment, the conductor paste layer obtained in the step (C3) is laminated on the main surface 21 of the green sheet for the conductor paste layer substrate obtained in the step (C3). The green sheet 4 for protective coating was used to produce an unsintered laminated substrate 2a. (E3) Burning step In the baking step, the unsintered laminated substrate 2a is fired at 800 to 880 ° C to obtain a laminated substrate body 2a. The unsintered laminated substrate 2a obtained in the step (D3) is the same as the step (D1) of the first embodiment, and is optionally degreased to remove a binder or the like, and the glass ceramic composition or the like is baked. The conditions for degreasing and baking can be the same as those of the step (D1) of the first embodiment. (F3) Joining step In the bonding step, the laminate is fired by laminating a low-melting glass paste layer

S 37 201212295 基板本體2a與預先準備之框體8，並進行熱處理而加以接 合。第9(c)圖至第9(f)圖係模式地顯示接合步驟者。第9(c) 圖及第9(d)圖乃分別顯示主面21上塗布低熔點玻璃膏9後之 積層基板本體2a之平面圖及沿行其X-X線之截面圖。第9(e) 圖及第9(f)圖乃顯示進而積層框體8且進行熱處理並接合框 體8與積層基板本體2a而形成之燒結發光元件用基板lb之 平面圖及沿行其X-X線之截面圖。 低熔點玻璃膏可使用諸如含有45mol%之Si02、41.5mo 1%之B2〇3、3_5mol%之Zr〇2、lmol%之ZnO、總計9mol〇/〇之 Κ20 及 Na2〇 者。 如第9(c)圖及第9(d)圖所示，藉由於(E3)步驟中製得之 積層基板本體2a之搭載面21a之預定領域，即，用於接合框 體8之領域，塗布低熔點玻璃膏9，並加熱至諸如38〇它左右 來逸散低溶點玻璃膏9之黏結劑以進行預燒。 其次，預燒低熔點玻璃膏9，並於形成有低熔點玻螭9 之基板本體2之主面21上，隔著低熔點玻璃9積層框體8。接 著，在真空或氣體環境中，以諸如約38(rc左右之溫度進行 熱處理而使低熔點玻璃9熔融，再如第9(e)圖及第9⑺圖^ 1 示匕’對積層基板本體2a接合框體8，而製得發光元件用基板 又，與第1實施形態相同’接合後，可視需要而配· 金層等通f在發光元制基板巾⑽賴導體之導電^ 護膜’以覆蓋元件連接端子5及外部連接端外之整體。“ 本實施形態中，基板本體用生片2亦非必由單—之生片 ⑧ 38 201212295 所構成，亦可為積層複數片生片而成者。且，各部之形成 順序等亦可在發光元件用基板之製造之可行範圍内適度予 以變更。 貫施例 以下，藉實施例將更具體說明本發明’但非指本發明 受限於實施例。 (第1實施例） 藉以下所說明之方法製成構造與第1圖所示者相同之 測試用發光裝置。另，與前述相同，就焙燒前後使用於構 件之標號亦使用了相同者。 首先，製成用於製作發光元件用基板1之基板本體2之 基板本體用生片2、保護塗層用生片4、框體用生片8。用於 製作基板本體用生片2及保護塗層用生片4之基板本體用玻 璃粉末則調配、混合了原料而製得含有60.4ml%之Si02、 15.6mol%之B2〇3、6mol%之Al2〇3、15mol%之CaO、lmol% 之K20、2mol%之Na2〇的玻璃。 另，用於製作框體用生片8之框體用玻璃粉末則調配、 混合了原料而含有81.6mol%之Si02、16.6mol%之B203、 1.8mol%之ΙΟ。將該等原料混合物置入白金坩堝並在 1600 C下進行熔融60分鐘後’再倒出上述溶融狀態之玻璃 並冷卻之。藉氧化銘製球磨機磨碎上述玻璃4〇小時而製成 基板本體用玻璃粉末。另，磨碎時之溶劑則使用了乙醇。 以上述基板本體用破璃粉末占38質量％、氧化鋁填料 (昭和電工公司出品，商品名：al_45H)a38質量％、氧化S 37 201212295 The substrate body 2a and the frame 8 prepared in advance are heat-treated and joined. The figures 9(c) to 9(f) show the joining steps in a pattern. Figs. 9(c) and 9(d) are plan views showing the laminated substrate body 2a coated with the low-melting glass paste 9 on the main surface 21, respectively, and a cross-sectional view taken along line X-X thereof. 9(e) and 9(f) are plan views showing the laminated light-emitting element substrate lb formed by laminating the frame 8 and heat-treating and joining the frame 8 and the laminated substrate main body 2a, and the XX line along the line Sectional view. As the low-melting glass paste, for example, those containing 45 mol% of SiO 2 , 41.5 mol of 1% of B 2 〇 3, 3 - 5 mol% of Zr 〇 2, 1 mol% of ZnO, and 9 mol of ruthenium/iridium 及 20 and Na 2 总计 are used. As shown in the figure 9(c) and the figure 9(d), the predetermined area of the mounting surface 21a of the laminated substrate body 2a obtained in the step (E3), that is, the field for joining the frame 8, The low melting point glass paste 9 is applied and heated to a temperature such as 38 Å to dissipate the binder of the low melting point glass paste 9 for pre-firing. Next, the low-melting glass paste 9 is pre-fired, and the frame 8 is laminated on the main surface 21 of the substrate main body 2 on which the low-melting glass substrate 9 is formed, via the low-melting glass 9. Next, in a vacuum or a gas atmosphere, the low-melting glass 9 is melted by heat treatment at a temperature of, for example, about 38 rc, and the laminated substrate body 2a is shown as shown in Fig. 9(e) and Fig. 9(7). When the frame 8 is joined, the substrate for a light-emitting element is obtained in the same manner as in the first embodiment. After the bonding, the gold layer or the like can be provided as needed, and the substrate (10) of the substrate of the light-emitting device (10) can be used as the conductive film of the conductor. The whole of the component connection terminal 5 and the external connection terminal are covered. In the present embodiment, the green sheet for the substrate main body 2 is not necessarily composed of a single green sheet 8 38 201212295, and may be a laminate of a plurality of green sheets. Further, the order of formation of the respective portions may be appropriately changed within the scope of the manufacture of the substrate for a light-emitting element. The following is a more detailed description of the present invention by way of examples, but the invention is not limited by the examples. (First Embodiment) A test light-emitting device having the same structure as that shown in Fig. 1 was produced by the method described below. Similarly to the above, the same reference numerals are used for the members used before and after firing. First, system The green sheet for the substrate main body 2, the green sheet 4 for protective coating, and the green sheet 8 for the frame body for producing the substrate main body 2 of the substrate 1 for a light-emitting element. The green sheet for the substrate main body 2 and the green sheet for the protective coating are used. The substrate body of the sheet 4 was prepared and mixed with glass powder to obtain 60.4 ml% of SiO 2 , 15.6 mol % of B 2 〇 3 , 6 mol % of Al 2 〇 3 , 15 mol % of CaO , 1 mol % of K 20 , 2 mol . In addition, the glass powder for the frame for producing the green sheet 8 for the frame is prepared by mixing and mixing the raw materials to contain 81.6 mol% of SiO 2 , 16.6 mol % of B203, and 1.8 mol% of ruthenium. The raw material mixture was placed in a platinum crucible and melted at 1600 C for 60 minutes, and then the glass in the molten state was poured out and cooled. The glass was ground by an Omega Ball Mill for 4 hours to form a substrate body. In the case of the above-mentioned substrate, the glass powder is used in an amount of 38% by mass, and the alumina filler (produced by Showa Denko Co., Ltd., trade name: al_45H) a 38% by mass, oxidized.

S 39 201212295 锆填料（第一稀元素化學工業公司出品，商品名：HSY-3F-J) 占24質量％之比例加以調配、混合，而製成基板本體用玻 璃陶瓷組成物。 對上述基板本體用破璃陶瓷組成物50g添加有機溶劑 (曱苯、二曱苯、2-丙醇、2-丁醇依質量比4 : 2 : 2 : 1混合 而成者）15g、可塑劑（鄰苯二甲酸二-2-乙基己基酯)2.5g、作 為黏結劑之聚乙烯丁醛（DENKA公司出品，商品名： PVK#3000K)5g，進而調配、混合分散劑（BYK Additives &amp; Instruments公司出品，商品名：BYK180)0.5g，而調製成漿 料。 又’依框體用玻璃粉末占93質量％、氧化銘填料（昭和 電工公司出品，商品名：AL-45H)占7質量％之比例加以調 配、混合而製成框體用玻璃陶瓷組成物。對該框體用玻璃 陶瓷組成物50g添加有機溶劑（曱苯、二曱苯、2-丙醇、2-丁醇依質量比4 : 2 : 2 : 1混合而成者）15g、可塑劑（鄰苯二 甲酸二-2-乙基己基酯）2.5g、作為黏結劑之聚乙烯丁醛 (DENKA公司出品’商品名：PVK#3000K)5g，進而調配、 混合分散劑（BYK Additives &amp; Instruments公司出品，商品 名：BYKl8〇)〇.5g，而調製成漿料。 藉刮刀成膜法將基板本體用玻璃陶瓷組成物所構成之 漿料塗布於PET薄片上，使其乾燥而製成生片。其次，積層 已製成之生片，而製成大致平板狀且焙燒後之厚度為 0.2mm之基板本體用生片2，以及大致平板狀且焙燒後之膜 厚為0.1mm之保護塗層用生片4。 ⑧ 40 201212295 又’藉刮刀成膜法將框體用玻璃陶瓷組成物所構成之 漿料塗布於PET薄片上，使其乾燥而製成生片。其次，積層 已製成之生片，而製成框外之形狀與基板本體用生片2相 同’而框内之形狀為直徑4_3mm之圓形，焙燒後之框高為 0.5mm之孝匡體用生片8。 另，依質量比85 : 15之比例調配導電性粉末(銀粉末， 大研化學工業公司出品，商品名：S55〇)、作為媒液之乙基 纖維素，並加以分散於作為溶劑之〇1萜品醇中以使固形物占 85質量％。織’於磁器研蛛中加以混拌—小時，進而藉 二根輥輪進行混拌、分散3次而製成配線導體用膏。 又’散熱層帛金屬膏則依質量比9〇: 1〇之比例調配銀 粉末(大研化學工業公司出品， 商品名：S400-2)與作為媒液 之乙基纖維素，並加以分散於作為溶劑之α%品醇中以使固 形物占87t4%。然後，於磁器研砵中加以混拌一小時， 進而藉三根輥輪進行混拌、分散3次而製造之。 就基板本體用生片2之相當於貫通導體7 機形成直彳iG.3_之貫通孔，再藉網印S 39 201212295 Zirconium filler (produced by the first rare element chemical industry company, trade name: HSY-3F-J) The ratio of 24% by mass is blended and mixed to form a glass ceramic composition for the substrate body. 15 g of an organic solvent (a mixture of terpene, diphenyl, 2-propanol and 2-butanol in a mass ratio of 4:2:2:1) was added to 50 g of the glass ceramic composition for the substrate body, and a plasticizer was added. 2.5 g of (di-2-ethylhexyl phthalate), 5 g of polyvinyl butyral (produced by DENKA Co., Ltd., trade name: PVK #3000K) as a binder, and further blended and mixed dispersant (BYK Additives &amp; Produced by Instruments, trade name: BYK180) 0.5g, and prepared into a slurry. In addition, the glass-ceramic composition for the frame is prepared by mixing and mixing the glass powder in an amount of 93% by mass and the oxidized filler (produced by Showa Denko Co., Ltd., trade name: AL-45H) in an amount of 7% by mass. To the 50 g of the glass ceramic composition of the frame, 15 g of an organic solvent (a mixture of terpene, diphenyl, 2-propanol and 2-butanol in a mass ratio of 4:2:2:1) was added, and a plasticizer ( 2.5 g of di-2-ethylhexyl phthalate), 5 g of polyvinyl butyral (produced by DENKA's trade name: PVK #3000K) as a binder, and then blended and mixed dispersant (BYK Additives &amp; Instruments The company produced, the product name: BYKl8 〇) 〇. 5g, and prepared into a slurry. A slurry composed of a glass ceramic composition of the substrate body was applied onto a PET sheet by a doctor blade forming method, and dried to obtain a green sheet. Next, a green sheet which has been formed into a substantially flat shape and has a thickness of 0.2 mm after baking and a green sheet 2, and a protective coating layer having a substantially flat shape and a film thickness of 0.1 mm after baking is used. Health film 4. 8 40 201212295 Further, a slurry composed of a glass ceramic composition of a frame was applied onto a PET sheet by a doctor blade forming method, and dried to obtain a green sheet. Next, the green sheet which has been formed is laminated, and the shape formed outside the frame is the same as that of the green sheet 2 of the substrate body, and the shape in the frame is a circle having a diameter of 4 mm to 3 mm, and the frame height after firing is 0.5 mm. Health film 8. In addition, a conductive powder (silver powder, manufactured by Dayan Chemical Industry Co., Ltd., trade name: S55〇), ethyl cellulose as a vehicle liquid, and dispersed in a solvent as a solvent are blended in a ratio of mass ratio of 85:15. In the terpineol, the solid content is 85% by mass. The weaving was mixed in a magnet-grinding spider for an hour, and further mixed and dispersed three times by two rolls to form a wiring conductor paste. In addition, the 'heat-dissipation layer 帛 metal paste is blended with silver powder (Dayan Chemical Industry Co., Ltd., trade name: S400-2) and ethyl cellulose as a vehicle liquid according to the mass ratio of 9〇: 1〇. As a solvent, α% alcohol was used so that the solid matter accounted for 87 t4%. Then, it was mixed in a magnetic mortar for one hour, and further mixed by three rolls and three times. For the substrate body, the green sheet 2 corresponds to the through-conductor 7 to form a through hole of the straight 彳iG.3_, and then borrows the screen printing.

41 认吗祖度Ra已藉 測定而確認為41 Recognition of the ancestor Ra has been confirmed by the measurement

S 201212295 0.08μηι 〇 就保護塗層用生片4則在相當於貫通導體7之部分藉鑽 孔機形成直徑0.3mm之貫通孔，並藉網印法充填配線導體 用膏而形成貫通導體用膏層72 ’且藉網印法於可供搭載發 光元件11之面上呈長方形地形成元件連接端子用膏層5以 覆蓋貫通導體用膏層72 ’而製得附導體膏層保護塗層用生 片4。 在由上而製得之附導體膏層基板本體用生片2之主面 21上，積層附導體膏層保護塗層用生片4，而使形成有成元 件連接端子5之面（搭載面21a)朝上。進而，於其上積層由上 而製得之框體用生片8而製得未燒結發光元件用基板1。 將由上而製得之未燒結發光元件用基板1保持在55〇°c 下5小時而進行去脂’進而保持在870°C下30分鐘而進行培 燒，即製成測試用之發光元件用基板1 ° (第1比較例） 就上述第1實施例’除將框體用玻璃陶瓷組成物取代為 基板本體用玻璃陶曼組成物以外’全與第1實施例相同，而 製成第1比較例之發光裝置。 其次，就第1實施例及第1比較例之發光裝置’藉以下 之方法測定了穿透率（％)及配光特性。另，穿透率之測定係 以通常之透射頻譜之測定方法為準’並使用分光光度計 (Perkin Elmer公司出品，商品名：Lambda950)，算出可見 光域之400〜800nm内之平均值作為穿透率（％)。 接著，對第1實施例及第1比較例中製成之發光元件用 42 201212295 基板搭載發光元件而製成發光裝置。對測試用之發光元件 用基板於保護塗層之搭載面上之一對元件連接端子之間烬 載2個2線型之LED元件，而製成發光裝置。 具體而言，LED元件11(昭和電工公司出品，商品名： GQ2CR460Z)係藉固晶材(信越化學工業公司出品，商品名： KER-3000-M2)而固定於上述位置上，並分別藉接合線電性 連接發光元件所包含之一對電極及位於各發光元件之外側 之元件連接端子。 進而，為構成密封層而藉密封劑(信越化學工業公司出 品，商品名：SCR-1016A)加以密封。密封劑中則對密封劑 依内含比例而含有20質量％之螢光體(Kasei Optonix公司出 品，商品名：P46-Y3)。 上述發光裝置所發出之光之配光特性，則藉對分光裝 置（Spectra Co-op公司出品，商品名：SOLIDLAMBDA . CCD. LED · MONITOR. PLUS)裝設LED 光度測定架（SpectraS 201212295 0.08μηι 〇 The green sheet 4 for protective coating is formed into a through hole having a diameter of 0.3 mm by a drill machine in a portion corresponding to the through conductor 7, and the paste for the wiring conductor is filled by a screen printing method to form a paste for the through conductor. The layer 72' is formed by a screen printing method in which the element connection terminal paste layer 5 is formed in a rectangular shape on the surface on which the light-emitting element 11 can be mounted to cover the through-conductive paste layer 72', thereby producing a conductor paste layer protective coating. Sheet 4. On the main surface 21 of the green sheet 2 for the conductor paste layer substrate main body obtained by the above, a conductor paste layer for protecting the coating layer 4 is laminated, and a surface on which the component connection terminal 5 is formed is formed (mounting surface) 21a) Upward. Further, a green sheet 8 for a frame obtained by laminating the upper layer 8 is formed thereon to obtain an unsintered substrate 1 for a light-emitting element. The substrate 1 for an unsintered light-emitting device obtained from the above was held at 55 ° C for 5 hours, and then degreased and further held at 870 ° C for 30 minutes, and fired, thereby preparing a light-emitting device for testing. 1° (first comparative example) The first embodiment is the same as the first embodiment except that the glass ceramic composition for the frame is replaced by the glass ceramic composition for the substrate body. A light-emitting device of a comparative example. Next, the transmittance (%) and the light distribution characteristics of the light-emitting device of the first embodiment and the first comparative example were measured by the following methods. In addition, the measurement of the transmittance is based on the measurement method of the normal transmission spectrum, and a spectrophotometer (produced by Perkin Elmer Co., Ltd., trade name: Lambda 950) is used to calculate the average value in the visible light region of 400 to 800 nm as a penetration. rate(%). Next, a light-emitting device was mounted on the substrate of the light-emitting element 42 201212295 manufactured in the first embodiment and the first comparative example to form a light-emitting device. For the light-emitting element substrate for testing, one of the two-line type LED elements was mounted between the element connection terminals on one of the mounting faces of the protective coating layer to form a light-emitting device. Specifically, the LED element 11 (produced by Showa Denko Co., Ltd., trade name: GQ2CR460Z) is fixed to the above position by a solid crystal material (Shin-Etsu Chemical Co., Ltd., trade name: KER-3000-M2), and is respectively joined by bonding. The wire is electrically connected to one of the pair of electrodes and the element connection terminal located on the outer side of each of the light-emitting elements. Further, in order to constitute a sealing layer, it was sealed by a sealant (Shin-Etsu Chemical Co., Ltd., trade name: SCR-1016A). In the sealant, 20% by mass of a phosphor (Kasei Optonix Co., Ltd., trade name: P46-Y3) was contained in the sealant in proportion. The light distribution characteristics of the light emitted by the above-mentioned light-emitting device are equipped with a spectrophotometer (Spectra Co-op, trade name: SOLIDLAMBDA. CCD. LED · MONITOR. PLUS) to install an LED photometric frame (Spectra)

Co-op公司出品，商品名：MAS-L0702)而加以測定。此時， 對作為發光元件之LED元件係使用電壓/電流產生器 (ADVANTEST公司出品，商品名：R6243)而施加35mA。 配光特性之測定具體而言係如第10圖所示，以發光元 件11之中心部為起點，並以對發光元件11之發光面（圖中上 側面）垂直之方向為0°，而在左右55。之角度内就每0.5。加以 測定了光度。由上述測定所得之配光曲線中，算出了最高 光度與最低光度之差（配光光度差）。 表1 中，則顯示由81.6mol%之Si02、16.6mol%之B2〇3、Co-op company, trade name: MAS-L0702) was measured. At this time, 35 mA was applied to the LED element as a light-emitting element using a voltage/current generator (produced by ADVANTEST Co., Ltd., trade name: R6243). Specifically, as shown in FIG. 10, the measurement of the light distribution characteristics is started from the center of the light-emitting element 11 and is 0° in the direction perpendicular to the light-emitting surface (upper side in the figure) of the light-emitting element 11. 55 left and right. Every 0.5 in the angle. The luminosity was measured. From the light distribution curve obtained by the above measurement, the difference between the highest luminosity and the lowest luminosity (distance of the light distribution luminosity) was calculated. In Table 1, it is shown that 81.6 mol% of SiO 2 and 16.6 mol% of B 2 〇 3,

S 43 201212295 1.8mol°/。之Κ2〇組成之玻璃粉末，並依玻璃粉末93質量％與 氧化鋁填料（昭和電工公司出品，商品名：AL-45H)7質量％ 之比例而製成之發光元件用基板(框體)之穿透率（％)，以及 發光裝置之配光特性（配光光度差(％))之測定結果。 [表1] 穿透率(％) 配光光度差（％) 第1實施例 82 15 第1比較例 15 30 由表1中上述之測定結果，已就第1實施例之發光元件 用基板確認了自内側側方朝框體8入射之包含4〇〇〜800nm 之波長領域之光之可見光穿透框體8後之穿透光相對入射 之可見光在400〜800nm之波長領域内之平均穿透率為8〇% 以上。 又，就使用第1比較例之發光元件用基板之發光裝置， 則已確認了配光光度差較大，且所發出之光之配光特性不 均。另，就使用第1實施例之發光元件用基板之發光裝置， 則已確認了所發出之光之配光光度差已減少，配光特性不 均減少，且放射光之配光特性可形成廣方向性。 以上，雖已就本發明之較佳實施形態加以說明，但本 發明並不受限於該等特定之實施形態，而可在申請專利範 圍内揭露之本發明之要旨範圍内進行各種變形、變更實施。 產業上之可利用性 依據本發明，係提供一種可使放射光之配光特性形成 廣方向性，並避免用於充填樹脂之框體因放射光而劣化之 ⑧ 44 201212295 發光元件用基板、發光裝置及發光元件用基板之製造方 法，且特別適用於使用白色LED元件之發光裝置。 另，茲將2010年7月26日已提申之日本專利申請 2010-166830號之說明書、申請專利範圍、圖示及摘要之全 部内容引用於此，作為本發明之揭露内容。 I：圖式簡單說明3 第1(a)、（b)圖係顯示第1實施形態之發光元件用基板及 使用該發光元件用基板之發光裝置之一例之平面圖及截面 圖。 第2(a)〜(f)圖係模式地顯示第1圖所示之發光元件用基 板之製造程序之一部分者。 第3(a)〜(f)圖係模式地顯示第1圖所示之發光元件用基 板之製造程序之一部分者。 第4(a)、（b)圖係顯示第2實施形態之發光元件用基板及 使用該發光元件用基板之發光裝置之一例之平面圖及截面 圖。 第5(a)〜(d)圖係模式地顯示第4圖所示之發光元件用基 板之製造程序之一部分者。 第6(a)〜(d)圖係模式地顯示第4圖所示之發光元件用基 板之製造程序之一部分者。 第7(a)、（b)圖係顯示第3實施形態之發光元件用基板及 使用該發光元件用基板之發光裝置之一例之平面圖及截面 圖。 第8(a)〜(f)圖係模式地顯示第7圖所示之發光元件用基S 43 201212295 1.8mol ° /. In the case of the glass powder of the composition, the substrate for a light-emitting device (frame) made of a ratio of 93% by mass of the glass powder and 75% by mass of the alumina filler (product name: AL-45H) The measurement result of the transmittance (%) and the light distribution characteristics (light distribution luminosity difference (%)) of the light-emitting device. [Table 1] Transmittance (%) Spectrophotometric difference (%) First embodiment 82 15 First comparative example 15 30 The results of the above-described measurement in Table 1 were confirmed on the substrate for a light-emitting device of the first embodiment. The average penetration of the transmitted light passing through the frame 8 and the visible light which is incident on the frame 8 from the inner side toward the frame 8 is transmitted through the frame 8 with respect to the incident visible light in the wavelength range of 400 to 800 nm. The rate is above 8〇%. Further, in the light-emitting device using the substrate for a light-emitting element of the first comparative example, it was confirmed that the difference in the luminescence of the light distribution was large, and the light distribution characteristics of the emitted light were not uniform. Further, in the light-emitting device using the substrate for a light-emitting element of the first embodiment, it has been confirmed that the difference in the light distribution luminosity of the emitted light is reduced, the unevenness of the light distribution characteristics is reduced, and the light distribution characteristics of the emitted light can be broadly formed. Directionality. The preferred embodiments of the present invention have been described above, but the present invention is not limited to the specific embodiments, and various modifications and changes can be made within the scope of the invention as disclosed in the appended claims. Implementation. INDUSTRIAL APPLICABILITY According to the present invention, it is possible to provide a light-emitting property of a light-emitting property, and to prevent a frame for filling a resin from being deteriorated by radiation. The method for manufacturing a device and a substrate for a light-emitting element is particularly suitable for a light-emitting device using a white LED element. In addition, the entire contents of the specification, the scope of the application, the drawings and the abstract of the Japanese Patent Application No. 2010-166830, the entire disclosure of which is hereby incorporated by reference. I. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1(a) and (b) are a plan view and a cross-sectional view showing an example of a light-emitting device substrate and a light-emitting device using the light-emitting device substrate according to the first embodiment. The second (a) to (f) drawings schematically show one of the manufacturing procedures of the substrate for a light-emitting element shown in Fig. 1. The third (a) to (f) drawings schematically show a part of the manufacturing procedure of the substrate for a light-emitting element shown in Fig. 1. 4(a) and 4(b) are a plan view and a cross-sectional view showing an example of a light-emitting device substrate and a light-emitting device using the light-emitting device substrate of the second embodiment. The fifth (a) to (d) drawings schematically show a part of the manufacturing procedure of the substrate for a light-emitting element shown in Fig. 4. The sixth (a) to (d) drawings schematically show one of the manufacturing procedures of the substrate for a light-emitting element shown in Fig. 4. 7(a) and 7(b) are a plan view and a cross-sectional view showing an example of a light-emitting device substrate and a light-emitting device using the light-emitting device substrate of the third embodiment. 8(a) to (f) show the base of the light-emitting element shown in Fig. 7

S 45 201212295 板之製造程序之一部分者。 第9(a)〜(f)圖係模式地顯示第7圖所示之發光元件用基 板之製造程序之一部分者。 第10圖係模式地顯示用於測定發光裝置所發出之光之 配光特性之方法之戴面圖。 【主要元件符號說明】 1、la、lb…發光元件用基板 9…接合層、低炫點玻璃膏 2…基板本體、基板本體用生片 10、10a、10b.··發光裝置 2a…積層基板本體、未燒結積 11·..LED元件、發光元件 層基板 12…接合線 3…散熱層、散熱層用膏層 13…密封層 4…保護塗層、保護塗層用生片 21 · · ·主面 5…元件連接端子、元件連接端 21a…搭載面 子用膏層 22…背面 6…外部連接端子、外部連接端 子用膏層 71、72…貫通導體用膏層 H0···距離 7···貝通導體、貫通導體用膏層 H1···高度尺寸 8…框體、框體用生片 L···光路徑 46S 45 201212295 Part of the manufacturing process of the board. In the nineth (a) to (f)th drawings, one of the manufacturing procedures of the substrate for a light-emitting element shown in Fig. 7 is displayed. Fig. 10 is a perspective view schematically showing a method for measuring a light distribution characteristic of light emitted from a light-emitting device. [Description of main components] 1. La, lb... Substrate 9 for light-emitting elements... Bonding layer, low-focus glass paste 2... Substrate main body, green sheets for substrate main bodies 10, 10a, 10b. · Light-emitting device 2a... Laminated substrate Main body, unsintered product 11·.. LED element, light-emitting element layer substrate 12, bonding wire 3, heat-dissipating layer, heat-dissipating layer paste layer 13, sealing layer 4, protective coating layer, protective coating green sheet 21 · · Main surface 5: element connection terminal, element connection end 21a... mounting surface cream layer 22... back surface 6... external connection terminal, external connection terminal paste layer 71, 72... through conductor paste layer H0··· distance 7·· ·Belt conductor, through-conductor paste layer H1···height size 8...frame, frame body green sheet L···light path 46

Claims (1)

201212295 七、申請專利範圍： 1. 一種發光元件用基板，包含有： 基板本體，係由包含玻璃粉末30〜50質量％與陶瓷 填料5 0〜7 0質量％之玻璃陶瓷組成物之燒結體所構成， 並具有搭載有發光元件之搭載面者；及 框體，係於前述基板本體之前述搭載面側設成圍繞 前述搭載面上所搭載之前述發光元件，並對前述發光元 件所發出之可見光為透明，且含有玻璃80質量％以上 者。 2. 如申請專利範圍第1項之發光元件用基板，其中前述框 體對入射之可見光之穿透率為80%以上。 3. 如申請專利範圍第1或2項之發光元件用基板，其中前述 框體在令前述基板本體之熱膨脹係數為a^ppmrc)，而 前述框體之熱膨脹係數為a2(ppm/°C )時，滿足％ — 條件。 4. 如申請專利範圍第1至3項中任一項之發光元件用基 板，其中前述框體係由包含玻璃粉末90〜95質量％，與 選自於由陶瓷填料及矽石填料所構成群組中之至少1種 填料5〜10質量％之玻璃陶瓷組成物的燒結體所構成。 5. 如申請專利範圍第1至4項中任一項之發光元件用基 板，其中前述框體設於前述基板本體之周緣部中之前述 搭載面側。 6. 如申請專利範圍第1至5項中任一項之發光元件用基 板，其中前述基板本體之前述搭載面由保護塗層 S 47 201212295 (overcoat)所形成，該保護塗層之下部形成有散熱層。 7. 如申請專利範圍第1至6項中任一項之發光元件用基 板，其中前述基板本體包含形成於前述基板本體之前述 搭載面側並用於反射光之反射層，以及形成於前述反射 膜上之玻璃膜。 8. —種發光裝置，其包含有： 如申請專利範圍第1至7項中任一項之發光元件用 基板； 搭載於前述搭載面上之前述發光元件；及 用於密封前述發光元件之密封層。 9. 如申請專利範圍第8項之發光裝置，其中前述密封層係 藉由於前述框體之框内充填密封樹脂而形成。 10. 如申請專利範圍第8或9項之發光裝置，其中前述框體之 折射率與前述密封層之折射率之折射率差在0.1以下。 11. 如申請專利範圍第8至10項中任一項之發光裝置，其中 前述框體之高度尺寸係自前述搭載面至搭載於前述搭 載面上之前述發光元件之上面為止之距離的1.3倍以上 且5倍以下。 12. —種發光元件用基板之製造方法，該發光元件用基板包 含有： 基板本體，係由包含玻璃粉末30〜50質量％與陶瓷 填料50〜70質量％之玻璃陶瓷組成物之燒結體所構成， 並具有搭載有發光元件之搭載面者；及 框體，係於前述基板本體之前述搭載面側設成圍繞 ⑧ 48 201212295 前述搭載面上所搭載之前述發光元件，並對前述發光元 件所發出之可見光為透明，且包含玻璃80質量％以上 者， 該方法包含焙燒步驟，其係將由前述玻璃陶瓷組成 物所構成且用於形成前述基板本體之第1生片，以及用 於形成含有玻璃80質量％以上之前述框體之第2生片積 層而成之積層體進行培燒者。 13. —種發光元件用基板之製造方法，該發光元件用基板包 含有： 基板本體，係由包含玻璃粉末30〜50質量％與陶瓷 填料5 0〜7 0質量％之玻璃陶瓷組成物之燒結體所構成， 並具有搭載有發光元件之搭載面者；及 框體，係於前述基板本體之前述搭載面側設成圍繞 前述搭載面上所搭載之前述發光元件，並對前述發光元 件所發出之可見光為透明，且包含玻璃80質量％以上 者， 該方法包含接合步驟，其係藉由低熔點玻璃膏，而 將由前述玻璃陶瓷組成物之燒結體所構成之前述基板 本體，與含有前述玻璃80質量％以上之前述框體積層而 成之積層體進行熱處理，並將前述基板本體與前述框體 進行接合者。 S 49201212295 VII. Patent application scope: 1. A substrate for a light-emitting element, comprising: a substrate body, which is a sintered body of a glass-ceramic composition containing 30 to 50% by mass of a glass powder and 50 to 70% by mass of a ceramic filler. And a mounting surface having a mounting surface on which the light emitting element is mounted; and a frame body on the mounting surface side of the substrate main body, the light emitting element mounted on the mounting surface, and visible light emitted from the light emitting element It is transparent and contains 80 mass% or more of glass. 2. The substrate for a light-emitting device according to claim 1, wherein the frame has a transmittance of visible light of 80% or more. 3. The substrate for a light-emitting device according to the first or second aspect of the invention, wherein the frame body has a coefficient of thermal expansion of the substrate body of a^ppmrc), and the thermal expansion coefficient of the frame body is a2 (ppm/°C) When % is satisfied. 4. The substrate for a light-emitting device according to any one of claims 1 to 3, wherein the frame system comprises 90 to 95% by mass of the glass powder, and is selected from the group consisting of ceramic fillers and vermiculite fillers. A sintered body of at least one filler of 5 to 10% by mass of the glass ceramic composition. 5. The substrate for a light-emitting element according to any one of claims 1 to 4, wherein the frame body is provided on a side of the mounting surface of a peripheral portion of the substrate body. 6. The substrate for a light-emitting element according to any one of claims 1 to 5, wherein the mounting surface of the substrate body is formed of a protective coating S 47 201212295 (overcoat), and a lower portion of the protective coating is formed Heat sink. 7. The substrate for a light-emitting device according to any one of the first aspect of the present invention, wherein the substrate body includes a reflective layer formed on the mounting surface side of the substrate body and configured to reflect light, and a reflective film formed on the reflective film. The glass film on it. A light-emitting device comprising: the substrate for a light-emitting device according to any one of claims 1 to 7; the light-emitting device mounted on the mounting surface; and a seal for sealing the light-emitting device Floor. 9. The light-emitting device of claim 8, wherein the sealing layer is formed by filling a frame of the frame with a sealing resin. 10. The light-emitting device of claim 8 or 9, wherein the refractive index difference between the refractive index of the frame and the refractive index of the sealing layer is 0.1 or less. The light-emitting device according to any one of claims 8 to 10, wherein the height of the frame is 1.3 times the distance from the mounting surface to the upper surface of the light-emitting element mounted on the mounting surface. Above and 5 times or less. 12. A method of producing a substrate for a light-emitting element, comprising: a substrate body comprising a sintered body of a glass-ceramic composition comprising 30 to 50% by mass of a glass powder and 50 to 70% by mass of a ceramic filler; And a mounting body having a mounting surface on which the light-emitting element is mounted; and a frame body that is disposed on the mounting surface side of the substrate body so as to surround the light-emitting element mounted on the mounting surface of 8 48 201212295, and the light-emitting element The emitted visible light is transparent and contains 80% by mass or more of the glass. The method includes a baking step of forming the first green sheet composed of the glass ceramic composition and used to form the substrate body, and for forming the glass containing glass. 80% by mass or more of the laminate of the second green sheet of the above-mentioned frame body is fired. 13. A method of producing a substrate for a light-emitting element, comprising: a substrate body comprising sintering of a glass-ceramic composition comprising 30 to 50% by mass of a glass powder and 50 to 70% by mass of a ceramic filler; And a mounting body having a mounting surface on which the light emitting element is mounted; and a frame body provided on the mounting surface side of the substrate body so as to surround the light emitting element mounted on the mounting surface, and emitting the light emitting element The visible light is transparent and contains 80% by mass or more of the glass. The method includes a bonding step of forming the substrate body composed of the sintered body of the glass ceramic composition and the glass containing the glass by a low melting point glass paste. 80% by mass or more of the layered body of the frame volume layer is heat-treated, and the substrate body is joined to the frame body. S 49
TW100126385A 2010-07-26 2011-07-26 Substrate for light-emitting element, light-emitting device, and method for producing substrate for light-emitting element TW201212295A (en)

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