201143554 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種電漿處理裝置，例如蝕刻基板的蝕 刻裝置或在基板表面形成薄膜的成膜裝置等，利用藉由受 高頻電力供給的高頻天線而生成的電漿，施予對象物各種 處理的電漿處理裝置。 【先前技術】 先前以來，例如專利文獻1的記載，於電漿中形成磁 通密度為「〇」的零磁場區域之電漿蝕刻裝置已為人週知。 若依據此種裝置，由於電漿中的電子會隨著電漿空間之磁 場梯度朝零磁場區域移動，所以與未形成零磁場區域的裝 置相較，可生成更高密度的電漿。上述形成零磁場區域的 方法，可採用於捲繞於圓筒狀之真空容器外周的三段磁場 線圈中，對於上段及下段的磁性線圈供給同方向的電流， 且對於中段的磁場線圈供給與供給至此等磁場線圈的電流 相反方向的電流，藉以將沿著真空容器周緣方向的環狀零 磁場區域形成於該真空容器内的方法。若依據此種方法， 由於藉由調整供給至磁場線圈的電流值即可變更零磁場區 域的直徑，所以可變更對蝕刻對象之電漿密度的分佈，甚 至能夠提高蝕刻速度之均勻性。 [專利文獻1]日本專利公開公報特開平8-311667號 【發明内容】 (發明所欲解決之課題） 201143554 然而’上述電漿蝕刻裝置中，來自蝕刻處理的生成物 或副產物等會附著於真空容器之内表面，每次執行真空容 器内的钱刻處理時，此種的附著物會堆積於該内表面。由 於在執行上述蝕刻處理時’會反覆進行真空容器内的溫度 變化或真空容器内的壓力變化，所以如此堆積的附著物’ 尤其疋堆積於遠離高頻天線之部位的附著物，會受到此等 的變化而有自上述内表面剝離之虞。如先前的專利文獻i 所圮載，若為在真空容器之外周捲繞有高頻天線的構成， 則附著物會從遠離該高頻天線之部位的真空容器之頂部剝 離。如此從頂部剝離的附著物會附著於基板之蝕刻處理 面，甚至使通過該電漿蝕刻裝置之處理而製造的製品良率 惡化。 對此，如上述的電漿蝕刻裝置中，已有檢討使捲繞於 上述真空谷器之周圍的高頻天線，配置於該真空容器所具 有的頂部上，藉以減輕此種問題。若如此地將高頻天線配 置於頂部，則藉由高頻天線之電容耦合成分，相對於電漿 電位的較高之負電位就可形成於頂部之内表面。然後，由 於向該内表面被加速的電漿中之正離子撞擊到頂部，所以 堆積於頂部的上述附著物可藉由正離子之濺鍍效應而被去 除、或附者物之堆積本身可受到抑制。 然而，為了使能夠抑制此種附著物之堆積的區域更大 於頂部之範圍，若增大頂部佔有的上述高頻天線之配設區 域，亦即，將咼頻天線形成例如渦捲狀而使其線長增大， 則尚頻天線之自感（self inductance)也會與此成正比而增 大。在此，對此種渦捲狀之高頻天線供給高頻電力時，與 對線長比此還更短之例如環狀的高頻天線供給同一頻率^ 201143554 高頻電力時相較，如上述的自感之增加，高頻天線之感抗 會因而增加。因此，設置於高頻天線與高頻電源之間的匹 配電路中，必須進行使該匹配電路之感抗降低的補正。其 結果，匹配電路中的寄生電容等會對於阻抗之匹配本身造 成較大的影響，恐會招致容器内生成的電漿之不穩定化。 又，因此種高頻天線之延長，與環狀之高頻天線相較，高 頻天線中的電阻損失亦增加，再者，反射損失亦因上述般 的阻抗之不匹配而增加。其結果，可能使供給至高頻天線 的高頻電力之中，有助於用於上述基板處理之電漿之感應 的比例減少，並招致電漿密度降低之虞。 在此，若蝕刻的對象物之組成或構造為單一，則藉由 配合高頻天線之感抗而再建構匹配電路、以及進而使供給 至高頻天線的高頻電力增加，也可解決上述問題。然而， 此種電漿蝕刻裝置中，通常要處理的對象物之組成或構造 是多樣的，故而需要有配合對象物之組成或構造的電漿之 密度或電漿之電位。亦即，對於如上述的感抗，通常也需 要較寬的範圍。因此，採用渦捲狀的高頻天線時，必須對 於各對象物的種別進行配合感抗的匹配電路之再建構、或 作為高頻電力之供給源的高頻電源之變更等，然，即使可 抑制上述附著物的堆積，但此種作業需要偌大的功夫，而 成為一種大幅缺乏通用性的裝置。 如此，抑制附著物堆積於真空容器之内壁、例如頂部 等，以及維持裝置之通用性，兩者係處於若滿足其中之一 所期望狀態的條件，則難以擔保另一方的狀態之所謂的抵 制關係，難以同時確立該兩條件。 另外，此種問題並不限於使用由如上述之零磁場區域 201143554 所感應的電漿之電漿蝕刻裝置，例如，即使是與上述電漿 蝕刻裝置同樣地使用依高頻天線而感應的電漿之感應耦合 型電漿蝕刻裝置，亦為可大致共通發生者。又，不限於此 等電漿蝕刻裝置，即使是使用依上述高頻天線而感應的電 漿，而在基板表面形成薄膜的電漿CVD裝置中，由薄膜之 形成成分所構成的所謂成膜殘渣，亦堆積於尤其是包含高 頻天線之正下方的真空容器之内壁而成為附著物。亦即， 即使是具備高頻天線，且於對於處理對象物之基板的各種 處理中，使用藉由供給至此的高頻電力而感應的電漿之其 他的電漿處理裝置，亦為可大致共通發生者。 本發明係有鑒於上述實情而開發完成者，其目的係在 於提供一種電漿處理裝置，其係能夠抑制用於電漿處理的 裝置通用性之降低，且能夠抑制附著物堆積於真空容器之 頂部。 (解決課題之手段） 以下，針對用以解決上述課題的手段及其作用效果加 以記載。 本發明的一態樣係一種電漿處理裝置，該裝置係具備： 真空容器，其係具有介電物質所構成的頂部，將板狀的處 理對象物容納於内部；複數個高頻天線，其係位於前述頂 部之上方，從平行於向前述處理對象物之厚度方向延伸的 一軸線方向來看，形成環繞該軸線周圍之渦捲狀，且分別 具有輸入端部與輸出端部，並且電性並聯連接；至少一輸 入耦合部，其係能與前述複數個高頻天線之各自的輸入端 部耦合及脫離，排列於與前述軸線平行的方向，用以增加 及減少前述高頻天線之個數；一輸入端子，其係能與前述 201143554 複數個高頻天線之至少一輸入端部連接；至少一輸出耦合 部，其係能與前述複數個高頻天線之各自的輸出端部耦合 及脫離，排列於與前述軸線平行的方向，用以增加及減少 前述高頻天線之個數；一輸出端子，其係能與前述複數個 高頻天線之至少一輸出端部連接；匹配電路，其係電性連 接於前述輸入端子；以及高頻電源，其係經由前述匹配電 路供給高頻電力至前述輸入端子，使前述真空容器的内部 生成電漿。 若依據上述構成，將高頻天線之形狀形成渦捲狀，同 時，設置複數個該渦捲狀之高頻天線，且並聯連接此等複 數個高頻天線。因此，與外周大小和該高頻天線相同的環 狀之高頻天線相較，不僅是對應高頻天線之外周的頂部之 區域，就連對應比該外周還更靠近内側的頂部之區域，亦 可相對於真空容器内之電漿電位更成為負的電位，且可將 .電漿中所含有的正離子引入此等的區域。亦即，藉由正離 子對頂部的撞擊，可抑制電漿或使用該電漿之基板處理而 產生的附著物堆積於頂部。 此外，上述構成中，設置有複數個高頻天線，並且將 此等高頻天線並聯連接。在此，各高頻天線與上述環狀之 高頻天線相較，由於其線路長度較長，所以自感較高，感 抗也較高。將複數個高頻天線串聯連接時，該合成電感係 各高頻天線所具有的自感之和，越使高頻天線之數量增 加，複數個高頻天線全體的電感（即合成電感）就會越增 大。相對於此，將複數個高頻天線並聯連接時，該合成電 感係各高頻天線所具有的自感之倒數之和的倒數。因此， 合成電感變成比各高頻天線所具有的自感還更小，而且， 201143554 越增大高頻天線之數量，相對於各高頻天線之自感，合成 電感的降低程度就會越大。例如，將具有相同自感L之高 頻天線並聯連接三個時，其合成電感就成為L/3。 在電漿處理裝置中，通常謀求從亦包含高頻天線的高 頻電源至真空容器之傳輸路的阻抗、與包含電漿的真空容 器之阻抗的匹配。藉此，從高頻電源施加至真空容器側的 向頻電力會抑制以反射波反射至1¾頻電源側*亦即抑制無 助於電漿生成的高頻電力。又，上述二阻抗的匹配，一般 係藉由在傳輸路中的上述高頻天線之前段設置匹配電路來 實現。上述匹配電路係使用電感器或電容器而構成，具有 抵銷傳輸路的阻抗與真空容器的阻抗之差的阻抗。然而， 若阻抗因採用渦捲狀的高頻螺線天線而增加，則設置於高 頻螺線天線與高頻電源之間的匹配電路中，必須進行使容 抗降低的補正，高頻電力之傳輸路中的寄生電容等會帶給 阻抗之匹配本身很大影響。 關於此點，若如上所述將複數個高頻天線並聯連接， 則可使高頻螺線天線全體的自感與環狀之高頻天線大致相 同。亦即，雖然各高頻天線之容抗因設置上述渦捲狀之高 頻天線而降低，但若為並聯構成的複數個高頻天線，與單 一的高頻天線相較，則可抑制此種容抗的降低。可減輕上 述傳輸路所具有的寄生電容對於阻抗匹配造成的影響，且 可抑制電漿的不穩定化。再者，可抑制為了感應電漿而消 耗的電力量因上述自感的增加，甚至感抗的增加而有所損 失。換句話說，不僅是抑制因上述二阻抗的不匹配所造成 的電漿狀態之不穩定化或因此而造成的電力之損失，即便 因在該電漿處理裝置中實施的處理條件變更而感應的電漿 201143554 之狀態變動，使得傳輸路與真空容器之内部的阻抗差增 大，也可藉由高頻天線之個數的變更來謀求上述二個阻抗 的匹配。故而，可一邊抑制用於電漿處理的裝置的通用性 之降低，一邊抑制附著物堆積於真空容器的頂部。另外， 上述渦捲狀不僅是在單一平面上展開的渦捲狀，亦包含在 半球面上展開的渦捲狀即所謂的螺旋形狀。 上述電漿處理裝置的一實施例中，前述輸入端部係具 有向前述軸線方向貫通其的輸入端貫通孔，前述輸出端部 係具有向前述軸線方向貫通其的輸出端貫通孔，前述輸入 端子係包含：一輸入軸，形成向前述軸線方向延伸的柱狀， 插通複數個前述輸入端貫通孔；以及至少一輸入間隔物， 以被夾入於複數個前述輸入端部之間的形式被該輸入軸插 通，且具有導電性，該至少一輸入間隔物分別發揮作為前 述輸入耦合部的功能，前述輸出端子係包含：一輸出軸， 形成向前述軸線方向延伸的柱狀，插通複數個前述輸出端 貫通孔；以及至少一輸出間隔物，以被夾入於複數個前述 輸出端部之間的形式被該輸出軸插通，且具有導電性，該 至少一輸出間隔物分別發揮作為前述輸出耦合部的功能。 若依據上述構成，即可藉由軸線方向的輸入間隔物之 厚度來界定包夾該輸入間隔物的一對輸入端部間之距離， 更可藉由軸線方向的輸出間隔物之厚度來界定包夾該輸出 間隔物的輸出端部間之距離。因此，鄰接於轴線方向的一 對高頻天線之間，可形成相應於此等輸入間隔物之厚度與 輸出間隔物之厚度的空間。其結果，複數個高頻天線分別 與真空容器内部的間隔可藉由此等間隔物之厚度來調整。 故而，漏出真空容器内部的感應磁場之狀態，甚至由該感 10 201143554 應磁場生成的電漿之狀態，不僅可依 整，也可依間隔物之厚度來調整。 貝天線之個數來調 上述電襞處理裝置的一實施例中 隔物係包含前述軸線方向之厚度互里'一輪入間 物，前述至少-輸出間隔物係包含前述^^輪入間隔 異的複數個輸出間隔物。 跟万向之厚度互 右依據上述構成，複數個高頻天線 内部的間隔即可藉由間隔物之厚度在㈣與^容器之 整。故而，漏出真空容器内部的感應磁場之3内，行調 該感應磁場生成的電漿之狀態，可依間隔=甚至由 的範圍内進行調整。換句n 又在更寬 頻天線的高頻電力之=更確實地抑制供給至高 上述電漿處理裝置的一實施例中，前述 線之圈數係互為不同。 I數個同頻天 播占str述’若為複數個高頻天線之圈數係互為不同的 C天數個高頻天線具有相異的電感，與複數個 :„目同的電感之構成相較，可使合成感抗之範 圍擴張。故而，可再建構配合合成感抗的匹配電路，又， 可更確實地抑制供給至高頻天線的高頻電力之增加。 士述電漿處理裝置的一實施例中，從前述轴線方向來 看’刖述複數個高頻天線係相互交叉。 如上所述藉由將成形為渴捲狀的複數個高頻天線設置於頂 部上，就可相對於真空容器⑽感應的錢之電位，使該頂部成 為更負的電位。但是，將全部的高頻天線以其渦捲方向相同 也配置時；成各向頻天線之線路所具有的圈與圈之間 隔’例如第1圈與第2圈之間不存在有線路，對應於其正 201143554 下方位置的頂部之區域’靠^ 區域成為更低的負電位之虞::應於線路正下方位置的 Β ί 的區域以及難以抑制該堆積的部位。 複數個高敍料彳目^7 “相財向來看， 之間隔中也上述的各高頻天線之圈與圈 線路之正下”他的兩頻天線，位於構成高頻天線的 之區域會增大。換句話說，相對於真 工谷器内之電漿’可使成為負電位的頂部之 之 ::::::的頂部之區域擴張，使頂部中的上述:著 上述電聚處理裝置的—實施例中，前述輸人端子係經 ^側電容II連接於前述高頻電源，前述輸出端子係經 由輸出側電容器連接於基準電位。 輸出端子直接連接於預定之基準電位的構成中，C7有 高頻天線的輸人端子之電位具有狀之振幅而振盈了因 此，在上述輸入端部侧，雖然該區域因對應此的頂部之區 域與同頻天線的電容輕合而相對於電漿電位成為更負的電 ，，但疋在上述輸出端部側，由於對應此的頂部之區域與 同頻天線的電容耦合變小，與輸入端部側相較，該區域難 以成為負電位，有無法抑制附著物堆積於同區域之虞。 山對此，上述構成中，上述高頻天線之輸入端部與輸出 ，部，連接有輸入侧電容器與輸出側電容器，藉此，不僅 疋间頻天線之輸入侧的也會使輸出側的電位以預定的振幅 振盪，可對應高頻天線的頂部之區域全體，相對於電漿電 位，成為更負的電位。亦即，可抑制附著物堆積於對應高 頻天線的頂部之區域全體。 12 201143554 上述電漿處理裝置的一實施例中，更具備一磁場形成 部，於前述頂部之外周具有中心配置於同轴上的至少三段 的磁場線圈*於中段之磁場線圈之内側’形成沿者該磁場 線圈周緣方向的環狀零磁場區域，前述真空容器係構成為 内插於前述至少三段的磁場線圈的内側，且於該至少三段 的磁場線圈中，形成跨越最下段之磁場線圈至前述中段之 磁場線圈的筒狀，内含前述零磁場區域，且藉由前述頂部 覆蓋前述零磁場區域。 若依據上述構成，則可藉由上述複數段磁場線圈形成 零磁場區域，以藉由沿著磁場梯度而集中的電子，生成密 度特南的電榮^在該磁場區域中也存在有南密度之電榮中 所含有的正離子。亦即，可使被引入頂部的正離子之數量 增大，亦可增大頂部被正離子撞擊的頻度，甚至可更確實 地抑制附著物堆積於頂部。 【實施方式】 以下，參照圖1至圖4說明將本發明的電漿處理裝置 具體化為電漿蝕刻裝置的一實施形態。 圖1係顯示本實施形態的電漿蝕刻裝置之概略構成。 如同圖1所示，電漿蝕刻裝置10之真空容器11係形成轴 對稱於從容納於該真空容器11之内部的基板S向該基板S 之厚度方向延伸的一第一轴線A1的有蓋圓筒狀。該真空 容器11之頂部係同樣地形成軸對稱於第一軸線A1的圓板 狀，由以一種介電體之的石英為構成材料的頂板12而構 成。 真空容器11的内部空間之電漿生成區域11a中設置有 13 201143554 基板載置台13 ’用以載置在其内部實施電毁射彳處理 理對象物的基板S。該基板載置台13之外周設置有保護構 件14，其係對於電漿生成區域lla内所感應的電漿或成為 該電漿之原料的各種氣體具有耐性，用以保護該基板載置 台13不受此等氣體腐蝕。又，基板載置台13係連接有對 載置於此的基板S施加預定偏壓的偏壓用高頻電源2〇。另 外，在基板S與偏壓用高頻電源2〇之間設置有偏壓用匹配 電路21，用以謀求成為負載的電漿生成區域丨丨内的氣體 與從偏壓用高頻電源20至基板S的傳輸路之阻抗的匹配。 從上述真空容器11之内部來看，頂板12之外側係設 置有三段高頻螺線天線30，該三段高頻螺線天線3〇係與 頂板12之外表面平行，且在第一軸線A1上環繞於相異平 面上而重疊。此等三段高頻螺線天線3〇係藉由向平行於第 一軸線A1的方向延伸之柱狀的輸入端子33，以及同樣地 向平行於第一軸線A1的方向延伸之輸出端子34而電性並 聯連接。 串聯連接的高頻電源40，匹配電路41，以及輸入側電 容器42所構成的串聯電路；以及串聯連接的直流電源44， 以及低通濾波器45所構成的串聯電路係並聯連接於三段 的高頻螺線天線30中，從最上段的高頻螺線天線30突出 的輸入端子33之端部。 高頻電源40係輸出用以在電漿生成區域iia生成電聚 的高頻電力’例如13.56MHz之高頻電力。匹配電路41係 謀求.成為負載的上述電漿生成區域lla内之氣體，與包 含上述高頻螺線天線30，從高頻電源40至真空容器11之 傳輸路的阻抗之匹配。輸入側電容器42係能夠變更容量之 14 201143554 所謂的可變電容器，例如在l〇pF~1〇〇pF之範圍内任意地變 更靜電容量。直流電源44係能夠將例如0V〜-2000kv之直 流電壓施加至輸入端子33的電源。又，低通濾波器45係 從直流電源44之輸入的電壓中去除雜訊。 另一方面，從最上段的高頻天線3〇突出的輸出端子 34之端部係連接有亦可變更容量之所謂的可變電容器的輸 出側電谷器43，並且，該輸出側電容器43係經由該電漿 蝕刻裝置10之框體而連接至接地電位。另外，該輸出側電 容器43也與上述輸入側電容器42同樣，其靜電容量可在 例如10pF〜1〇〇pf之範圍内任意地變更。 不限於上述高頻螺線天線3〇，設置於電漿银刻裝置1〇 等之電漿處理裝置的高頻天線，一般係將其輸出端子連接 於接地等預定之基準電位，此種構成中，只有高頻天線的 輸入端子之電位具有預定之振幅而振盪。因此，在高頻天 線^輸入端部附近，雖然該區域會因對應此的頂板之區域 與而頻天線的電容耦合而相對於電漿電位成為負電位，但 疋在冋頻天線之輸出端部附近，由於對應此的頂板之區域 與:頻天線的電容耦合變小，所以與輸入端部側相較，在 該區域中難以成為負電位，有無法抑制附著物堆積於該區 域之虞二另外，上述介電體所構成的頂板12之内表面，即 =沒有尚頻螺線天線30與真空容器U内之電漿的電容耦 合，也會具有因電漿内的電子撞擊到頂部12所引起之負電 位’即所㉔的自偏壓電位。如上所述，藉由高頻螺線天線 3〇與電㈣容輕合，該自偏壓電位以上的負電位，即被職 與至頂板12之内表面。 關於此點，如上述電漿蝕刻裝置1〇般地，高頻螺線天 15 201143554 Ή之正確地說係連接於該輸入端部的輸入端 子33,連接有輸入侧電容器42，另一方面，在輸出端子 34連：有輸出側電容器43。藉此，不僅是高頻螺線天線 :之輸入側：電位’也會使輸出側的電位以預定的振幅振 藍，可對應高頻螺線天線3G的頂板12之區域全體，依上 述電容耦合’相對於真空容器U内之電漿，形成負電位。 亦即，可抑制附著物堆積於對應高頻螺線天線30的頂板 12之區域全體。 上述真空容器U之側面，詳言之係筒狀部的上述頂板 12附近，設置有中心配置於第一軸線A1上的三段磁 圈50。三段磁場線圈50中，最上段的上段線圈5〇u係配 置於較上述頂板12之内表面更於第一軸線Ai之方向接近 高頻螺線天線30的位置。又，三段磁場線圈5〇中，上段 線圈50u之下段的中段線圈50m係配置於頂部之内表面， 即本實施形態中，以包含於上述頂板12之内表面所位處的 平面上來配置，下段線圈50b係配置作為該中段線圈5〇m 之下段。換句話說，以上述筒狀的真空容器11從下段線圈 b之内側内插至中段線圈50m之内側的方式，相對於真空 容器11配置三段磁場線圈50。 另外’此等三個線圈、5〇m、50b中，分別從對應 的電力供給部51u、51m、51b，對上段線圈5〇u與下段線 圈50b供給具有相同方向的電流，又，對中段線圈5〇m供 給與供給至此等上段線圈5〇u與下段線圈5〇b之電流相反 方向的電流。藉此，沿著磁場線圈50之周緣方向，換言之， 沿著上述真空容器11之内表面的周緣方向，在上述中段線 圈50m之内側，形成呈環狀的零磁場區域ZMF。亦即，藉 16 201143554 由上述真空容器11與頂板12所劃分的電漿生成區域ua 内包含上述零磁場區域卿，並且藉由包含中段線圈亀 之配置面的頂板12之内表面’來覆蓋上述零磁場區域 ZMF ’如此而構成上述真空容器u。如此，三段磁場線圈 5〇與對此供給電力的各電力供給部51u、51m、51b等構成 磁場形成部之一例。 又’上述真空容器U係具有用以將成為電漿之原料的 钱刻氣體導入電漿生成區域Ua内的氣體導入口 15，該氣 體導入口 15連接有氣n供給部6()，用以供給與該電製钱 刻裝置10所實施的電Μ刻處理相應的各種姓刻氣體。另 外’該真空容器11係連接有用以將電漿生成區域ιι&内調 整至預疋之屋力的未圖示之排氣裝置。 參照圖2至圖4詳述上述高頻螺線天線3Q的構造，也 一併詳述與此連接的輸人端子33及輸出端子34之構造。 圖2⑻係顯示高_線天線％，以及設置於與此平行之面 =的頂板12之俯視構造；圖2⑻係顯示此等高頻螺線天線 3〇與頂板12的剖面構造。 如圖2(a)所示，高頻螺線天線3〇係例如在銅等的主 施予鍍鎮的線路所構成，同時，平行於通過呈圓形之頂板 ^之中心C1的上述第一軸線A1，且以與該第一軸線A1 的第二軸線A2上之點為中心C2 ’形成僅環繞該第一 軸線A1及第二轴線A2之周圍3 5圈的渦捲狀 頻螺線天線30係於 成同 二：：螺線天線30上之任意點p與中心C2 •在包含高頻螺線天線3G的平面上，將通過中心Ο的一 17 201143554 直線L0與連結高頻螺線天線3〇上的點p與中心C2之直 線所形成的角度設為中心角<9 ;以及 •上述分隔距離r之變化率（1以上的常數)設為距離變化率 α時， 滿足以中心C2為中心之極座標的方程式「Γ=α 0」。 又，高頻螺線天線30係以在上述直線上相互鄰接的線 路間之距離成為預定值之距離La的形式而構成。在此種呈 有知之渦捲狀的高頻螺線天線30中，該高頻螺線天線3〇 之兩端部之中，中心C2所位處的一端部之輸入端部31係 連接於上述輸入端子33，而與該輸入端部33不同的另一 端部之輸出端部32係連接於上述輸出端子34。 如圖2(b)所示，上述三個高頻螺線天線3〇係配置成為 包含該尚頻螺線天線30的面相互地平行，且從與上述第二 軸線A2平行方向之此等高頻螺線天線3〇之疊層方向DL， 投影至上述頂板12的投影像相同。因此，三個高頻螺線天 線30個別的輸入端部31及輸出端部32係位在與上述疊層 方向DL平行的直線上。 其次，參照圖3(a)、圖3(b)詳細說明如圖2(b)所示的 上述輸入端子33或是輸出端子34以及亦包含此等之周邊 構造之區域的區域Ra或區域Rb。另外，圖3⑻係放大顯 示區域Ra’另一方面圖’3(b)係放大顯示區域Rb。 如圖3(a)所示，在三個高頻螺線天線3〇之輸入端部 31，換s之，在上述第二軸線A2通過的端部，分別設有 貫通其厚度方向，換言之貫通高頻螺線天線3Q之疊層方向 DL的貫通孔。在此等貫通孔係插通朝上述疊層方向见延 伸之具導f性的螺㈣件33a，作為該高頻電力之輸入轴 201143554 的螺釘構件33a ’遍及於其全長’亦即遍及被***貫通孔 之方向，設有螺紋脊及螺紋溝。另外，螺釘構件33a並不 限於其全長設有螺紋脊及螺紋溝之螺釘，也可採用只在與 其他構件螺合的區域設有螺紋脊及螺紋溝之螺釘等。^ 詳述之’此等南頻螺線天線3 〇之中，疊層方向dl中 之最上段的高頻螺線天線30與中段的高頻螺線天線3〇具 有的貫通孔之輸入端貫通孔31a，其形狀為相同，且其直 徑係大於被***於此的螺釘構件33a之直徑。相對於此， 豐層方向DL中之最下段的高頻螺線天線3〇具有的貫通孔 之輸入端貫通孔31b，其直徑係小於上述輸入端貫通孔 31a，且形成能夠與被***於此的螺釘構件33a螺合的形 =二又，該螺釘構件33a係使螺釘構件33a之***方向的 則端面與對向最下段的高頻螺線天線3〇之頂板12的面成 為一致地螺設於輸入端貫通孔31b。 此外，最上段的高頻螺線天線3〇與中段的高頻螺線天 線30之間，以及中段的高頻螺線天線⑽與最下段的高頻 =線天線3G之間，分別夾人具有導電性之圓筒狀的輸入間 隔物33b。此等輸人間隔物33b係分別具有貫通於其厚度 方向，供上述螺釘構件33a插通的間隔物貫通孔33c，該間 隔^貫，孔33C之直徑係等於上述輸入端貫通孔31a。又， 以叹於取上段及中段的高_線天線3()的輸人端貫通孔 也之開口，與夾入於其等之間的輸入間隔物33b之間隔 物貝通33e之開口—致的形式，配置該輸入間隔物饥。 1以°又於中段的高頻螺線天線30的輸入端貫通孔31a之 屏/、夾入於中段及最下段的高頻螺線天線30之間的輸 隔物33b之間隔物貫通孔33c之開口一致的形式，配 201143554 置該輸入間隔物33b。然後，以被***於此等輸入端貫通 孔31a及間隔物貫通孔33c的螺釘構件33a之外表面與輸 入端貫通孔31a之内表面僅分隔一定的距離Lc，且螺釘構 件33a之外表面與間隔物貫通孔33c之内表面僅分隔相同 距離Lc之方式配置。 再者，在上述螺釘構件33a之疊層方向DL的兩端部 之中，於突出於最上段的高頻螺線天線30的端部，以該最 上段的高頻螺線天線30將配置於其正下方的輸入間隔物 33b往下方按壓的形式，螺設具有導電性的螺帽33d。 若依據此種構成，則最上段的高頻螺線天線30與中段 的高頻螺線天線30之間的疊層方向DL之距離，再者中段 的高頻螺線天線30與最下段的高頻螺線天線30之間的疊 層方向DL之距離，係分別藉由輸入間隔物33b之疊層方 向DL的厚度Lb而界定。又，最上段及中段的各高頻螺線 天線30的輸入端貫通孔31a之内表面與螺釘構件33a之外 表面之距離維持於上述的距離Lc，且各輸入間隔物33b的 間隔物貫通孔33c之内表面與螺釘構件33a之外表面的距 離同樣維持於上述的距離Lc。然後，各高頻螺線天線30 之輸入端部31係一邊經由輸入間隔物33b而電性連接，且 一邊固定此等構件之位置。 另外，本實施形態中，以維持此等構件間的電性連接 為前提，利用螺合於螺釘構件33a之導電性的螺帽33d固 定高頻螺線天線30及輸入間隔物33b之位置。但不限於 此，亦可利用由非導電性之材料所構成的螺帽來固定上述 構件，或者，亦可置換成例如將最上段的高頻螺線天線30 之輸入端貫通孔31a形成與最下段的高頻螺線天線30之輸 20 201143554 入端貫通孔31b同型，與螺釘構件33a螺合，藉以維持上 述構件間之電性連接的構成，而不藉由螺帽33d來固定， 又或者，亦可在高頻螺線天線30與被夾入於其間的輪入間 隔物33b之接觸面設置將此等耦合固定以維持接觸狀態的 耦合構造，藉此來固定上述構件之位置。 另一方面’如圖3(b)所示，在三個高頻螺線天線3〇之 輸出端部32，換言之’各高頻螺線天線30的兩端部之中， 相異於上述輸入端部31的端部，分別設有基本上具有與上 述輸入端子33同樣構成的輸出端子34。 ' 亦即，疊層方向DL中的最上段及中段的高頻螺線天 線30係具有輸出端貫通孔32a ’而最下段的高頻螺線天線 30係具有輸出端貫通孔32b。又，在最上段的高頻螺線天 線30與中段的高頻螺線天線30之間’及中段的高頻螺線 天線30與最下段的高頻螺線天線30之間，分別與輸入間 隔物33b相同’設置有具有導電性之圓筒狀的輸出間隔物 34b ’此等輸出間隔物34b係具有與上述輸出端貫通孔仏 相同直徑的貫通孔34C。此等輸出端貫通孔仏、^及貫 通孔W中插人有螺釘構件34a，此螺釘構件％係經由輸 出側電容器43及該電私㈣置1Q之框體而連接至接地 電位’作為高頻電力之輸出軸。另外，插通此等構件的螺 釘構件34a係與上述輸入端子3 哥偁忏扪磲 ^ t π 响于·33所具有的螺釘構件33a相 同，與最下段的高頻螺線天魂 ^ , m + 線30之輸出端貫通孔32b螺 合。又，I此4構件之位㈣螺巾胃 高頻螺線天線離置於其正下 方按押的形式，螺設於螺針構件34a。間^物34b在下 如上所述，三個高頻蜾始 ’、攻天線30係在其輸入端部31 201143554 及輸出端部32，藉由輸入端子33及輪出端子34相互地連 接。而且，此等輸入端子33及輸出蠕子34均由螺釘構件 33a、33a與輸入間隔物33b及輸出間隔物3钋所構成。該 螺釘構件33a、33a係***人於設置在上述輸人端部31° = 輸入端貫通孔31a、31b及設置在輸出端部32的輸出端貫 通孔32a、32b，換言之能夠對此等貫通孔31&、31卜 32b裝卸。該輸入間隔物33b及輸出間隔物34b係供該&螺 釘構件33a、34a插通，換言之能夠對螺釘構件33&'、14& 裝卸。換句話說，能夠從螺釘構件33a、34a拆除高頻職 天線30、輸入間隔物33b及輸出間隔物3仆以減少高頻螺 線天線30之數量，《是在螺釘構件33a、％***^入間 隔物33b及輸出間隔物34b之後，能夠設置新的高頻螺線 天線30。 31a、31b的螺釘構件33a、 間的輸入間隔物33b、及哭 而構成的輸入端子33。又 如此，本實施形態中，連接於高頻電源4㈣端子之一 例係例如藉^***設於高賴線天線3()之輸人端貫通孔 被夾入於各高頻螺線天線30之BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, such as an etching apparatus for etching a substrate or a film forming apparatus for forming a thin film on a surface of a substrate, and the like, which is supplied by high frequency power. The plasma generated by the high-frequency antenna is applied to the plasma processing apparatus for various treatments of the object. [Prior Art] For example, as described in Patent Document 1, a plasma etching apparatus for forming a zero magnetic field region having a magnetic flux density of "〇" in a plasma is known. According to such a device, since the electrons in the plasma move toward the zero magnetic field region with the magnetic field gradient of the plasma space, a higher density plasma can be generated than the device in which the zero magnetic field region is not formed. The above method for forming a zero magnetic field region can be applied to a three-stage magnetic field coil wound around the outer circumference of a cylindrical vacuum vessel, and supplies current in the same direction to the magnetic coils of the upper and lower sections, and supplies and supplies the magnetic coils in the middle section. The current in the opposite direction of the current of the magnetic field coil is formed by forming an annular zero magnetic field region along the circumferential direction of the vacuum vessel in the vacuum vessel. According to this method, since the diameter of the zero magnetic field region can be changed by adjusting the current value supplied to the field coil, the distribution of the plasma density to the etching target can be changed, and the uniformity of the etching speed can be improved. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 8-311667 (Invention) The present invention is related to the problem of the invention. However, in the above-mentioned plasma etching apparatus, products or by-products from etching treatment may adhere to each other. The inner surface of the vacuum container is deposited on the inner surface each time the money in the vacuum container is processed. When the etching process is performed, the temperature change in the vacuum vessel or the pressure change in the vacuum vessel is repeatedly performed. Therefore, the deposits deposited in this way are particularly deposited on the portion away from the high-frequency antenna. There is a change from the inner surface of the above. As described in the prior patent document i, if a high-frequency antenna is wound around the outside of the vacuum container, the deposit is peeled off from the top of the vacuum container away from the high-frequency antenna. The deposit thus peeled off from the top adheres to the etching treatment surface of the substrate, and even deteriorates the yield of the article manufactured by the treatment of the plasma etching apparatus. On the other hand, in the plasma etching apparatus described above, it has been reviewed that the high-frequency antenna wound around the vacuum chamber is placed on the top of the vacuum container to reduce the problem. If the high frequency antenna is placed at the top, the higher negative potential with respect to the plasma potential can be formed on the inner surface of the top by the capacitive coupling component of the high frequency antenna. Then, since the positive ions in the plasma accelerated to the inner surface hit the top, the deposits deposited on the top portion can be removed by the sputtering effect of the positive ions, or the accumulation of the attached objects themselves can be affected. inhibition. However, in order to make the area capable of suppressing the deposition of such deposits larger than the range of the top portion, if the arrangement area of the above-mentioned high frequency antenna occupied by the top portion is increased, that is, the chirp antenna is formed, for example, in a spiral shape. As the line length increases, the self inductance of the frequency antenna will increase in proportion to this. Here, when the high-frequency power is supplied to the scroll-shaped high-frequency antenna, for example, when the ring-shaped high-frequency antenna is supplied with the same frequency ^ 201143554 high-frequency power, which is shorter than the line length, as described above, As the self-inductance increases, the inductive reactance of the high-frequency antenna increases. Therefore, in the matching circuit provided between the high-frequency antenna and the high-frequency power source, it is necessary to perform correction for reducing the inductive reactance of the matching circuit. As a result, the parasitic capacitance and the like in the matching circuit may have a large influence on the matching of the impedance itself, which may cause instability of the plasma generated in the container. Further, as a result of the extension of the high-frequency antenna, the resistance loss in the high-frequency antenna is also increased as compared with the ring-shaped high-frequency antenna, and the reflection loss is also increased by the above-described impedance mismatch. As a result, it is possible to reduce the ratio of the induction of the plasma used for the substrate processing among the high-frequency power supplied to the high-frequency antenna, and to call the reduction in the density of the slurry. Here, if the composition or structure of the object to be etched is single, the matching circuit can be reconfigured by the inductive reactance of the high-frequency antenna, and the high-frequency power supplied to the high-frequency antenna can be increased, thereby solving the above problem. . However, in such a plasma etching apparatus, the composition or structure of the object to be processed is various, and therefore the density of the plasma or the potential of the plasma which is required to match the composition or structure of the object is required. That is, for the inductive reactance as described above, a wide range is usually required. Therefore, when a spiral-shaped high-frequency antenna is used, it is necessary to reconfigure the matching circuit for the type of each object, or to change the high-frequency power source as a supply source of high-frequency power, and the like. The accumulation of the above-mentioned deposits is suppressed, but such work requires a lot of effort, and becomes a device which is largely lacking in versatility. In this way, it is suppressed that the deposits are deposited on the inner wall of the vacuum vessel, for example, the top portion, and the versatility of the maintenance device, and both are in a condition that one of the desired states is satisfied, and it is difficult to guarantee the so-called resistance relationship of the other state. It is difficult to establish these two conditions at the same time. Further, such a problem is not limited to the plasma etching apparatus using the plasma induced by the zero magnetic field region 201143554 as described above, for example, even if the plasma is induced by the high frequency antenna as in the above plasma etching apparatus. The inductively coupled plasma etching apparatus is also generally available in common. Further, the plasma etching apparatus is not limited to the so-called film-forming residue composed of the film forming components in the plasma CVD apparatus in which the film is formed on the surface of the substrate by using the plasma induced by the high-frequency antenna. It is also deposited on the inner wall of the vacuum vessel, which is directly under the high-frequency antenna, and becomes an adherent. In other words, even in the various processes including the high-frequency antenna and the substrate for the object to be processed, the plasma processing device using the plasma induced by the high-frequency power supplied thereto can be substantially common. Occurred. The present invention has been made in view of the above circumstances, and an object thereof is to provide a plasma processing apparatus capable of suppressing reduction in versatility of a device for plasma treatment and suppressing deposition of deposits on top of a vacuum container. . (Means for Solving the Problem) Hereinafter, means for solving the above problems and effects thereof will be described. An aspect of the present invention is a plasma processing apparatus comprising: a vacuum container having a top portion made of a dielectric substance, and accommodating a plate-shaped processing object therein; and a plurality of high frequency antennas; It is located above the top portion, and is formed in a spiral shape around the axis as viewed in an axial direction parallel to the thickness direction of the object to be processed, and has an input end and an output end, respectively, and is electrically Parallel connection; at least one input coupling portion coupled to and detachable from respective input ends of the plurality of high frequency antennas, arranged in a direction parallel to the axis to increase and decrease the number of the high frequency antennas An input terminal capable of being coupled to at least one input end of the plurality of high frequency antennas of 201143554; at least one output coupling portion coupled to and detachable from respective output ends of the plurality of high frequency antennas; Arranging in a direction parallel to the aforementioned axis for increasing and decreasing the number of the aforementioned high frequency antenna; an output terminal capable of being higher than the foregoing plurality At least one output end of the antenna is connected; a matching circuit electrically connected to the input terminal; and a high frequency power supply that supplies high frequency power to the input terminal via the matching circuit to generate electricity inside the vacuum container Pulp. According to the above configuration, the shape of the high-frequency antenna is formed into a spiral shape, and a plurality of the spiral-shaped high-frequency antennas are provided, and the plurality of high-frequency antennas are connected in parallel. Therefore, compared with the ring-shaped high-frequency antenna having the same outer circumference and the same as the high-frequency antenna, not only the area corresponding to the top of the outer circumference of the high-frequency antenna but also the area corresponding to the top of the inner side than the outer circumference is also It can become a negative potential with respect to the plasma potential in the vacuum vessel, and positive ions contained in the plasma can be introduced into such regions. That is, by the impact of the positive ions on the top, deposits generated by the plasma or the substrate treatment using the plasma can be suppressed from accumulating on the top. Further, in the above configuration, a plurality of high frequency antennas are provided, and the high frequency antennas are connected in parallel. Here, each of the high-frequency antennas has a higher self-inductance and a higher inductance than the above-mentioned ring-shaped high-frequency antenna because of the long line length. When a plurality of high-frequency antennas are connected in series, the combined inductance is the sum of the self-inductances of the high-frequency antennas, and the number of the high-frequency antennas is increased, and the inductance of the plurality of high-frequency antennas (ie, the combined inductance) is The more it grows. On the other hand, when a plurality of high-frequency antennas are connected in parallel, the resultant inductance is the reciprocal of the sum of the reciprocal of the self-inductance of each of the high-frequency antennas. Therefore, the composite inductance becomes smaller than the self-inductance of each high-frequency antenna, and the more the number of high-frequency antennas is increased by 201143554, the greater the reduction of the composite inductance with respect to the self-inductance of each high-frequency antenna. . For example, when three high-frequency antennas with the same self-inductance L are connected in parallel, the combined inductance becomes L/3. In the plasma processing apparatus, it is generally desired to match the impedance of the transmission path from the high frequency power supply including the high frequency antenna to the vacuum path and the impedance of the vacuum container including the plasma. Thereby, the forward frequency power applied from the high-frequency power source to the vacuum vessel side suppresses reflection of the reflected wave to the 13⁄4 frequency power supply side*, that is, suppresses high-frequency power which does not contribute to plasma generation. Further, the matching of the above two impedances is generally realized by providing a matching circuit in front of the above-mentioned high frequency antenna in the transmission path. The matching circuit is formed using an inductor or a capacitor, and has an impedance that cancels the difference between the impedance of the transmission path and the impedance of the vacuum container. However, if the impedance is increased by using a spiral-shaped high-frequency helical antenna, it is necessary to perform correction for reducing the capacitive reactance in the matching circuit provided between the high-frequency helical antenna and the high-frequency power source, and the high-frequency power is required. The parasitic capacitance in the transmission path and the like will have a great influence on the matching of the impedance itself. In this regard, when a plurality of high-frequency antennas are connected in parallel as described above, the self-inductance of the entire high-frequency helical antenna can be made substantially the same as that of the ring-shaped high-frequency antenna. That is, although the capacitive reactance of each of the high-frequency antennas is lowered by providing the spiral-shaped high-frequency antenna, if a plurality of high-frequency antennas configured in parallel are compared with a single high-frequency antenna, this can be suppressed. Reduced capacitive reactance. The influence of the parasitic capacitance of the above-described transmission path on the impedance matching can be alleviated, and the instability of the plasma can be suppressed. Further, it is possible to suppress the amount of electric power consumed for inductive plasma from being lost due to an increase in the self-inductance described above or even an increase in the inductive reactance. In other words, it is not only suppressing the instability of the plasma state caused by the mismatch of the above two impedances or the loss of power due to the above, even if it is induced by the change of the processing conditions implemented in the plasma processing apparatus. The state of the plasma 201143554 changes so that the impedance difference between the transmission path and the inside of the vacuum container increases, and the matching of the two impedances can be achieved by changing the number of the high frequency antenna. Therefore, it is possible to suppress the deposition of deposits on the top of the vacuum container while suppressing the decrease in versatility of the apparatus for plasma treatment. Further, the scroll shape is not only a spiral shape which is developed on a single plane but also a spiral shape which is developed on a hemispherical surface, that is, a so-called spiral shape. In an embodiment of the plasma processing apparatus, the input end portion has an input end through hole penetrating in the axial direction, and the output end portion has an output end through hole penetrating in the axial direction, and the input terminal The utility model comprises: an input shaft forming a column shape extending in the axial direction, inserting a plurality of the input end through holes; and at least one input spacer to be sandwiched between the plurality of input ends The input shaft is inserted and electrically conductive, and the at least one input spacer functions as the input coupling unit, and the output terminal includes an output shaft that forms a columnar shape extending in the axial direction, and the plug-in plural The output end through hole; and at least one output spacer inserted through the output shaft to be sandwiched between the plurality of output ends, and having conductivity, the at least one output spacer functioning as The function of the aforementioned output coupling unit. According to the above configuration, the distance between the pair of input ends of the input spacer can be defined by the thickness of the input spacer in the axial direction, and the package can be defined by the thickness of the output spacer in the axial direction. The distance between the output ends of the output spacers is clamped. Therefore, a space corresponding to the thickness of the input spacer and the thickness of the output spacer can be formed between a pair of high frequency antennas adjacent to the axial direction. As a result, the interval between the plurality of high frequency antennas and the inside of the vacuum vessel can be adjusted by the thickness of the spacers. Therefore, the state of the induced magnetic field inside the vacuum vessel is leaked, and even the state of the plasma generated by the magnetic field can be adjusted not only according to the thickness of the spacer but also by the thickness of the spacer. In one embodiment of the electric field treatment device, the spacer system includes a thickness in the axial direction, and the at least one output spacer includes the plurality of round spaces. Output dividers. According to the above configuration, the interval between the plurality of high-frequency antennas can be equal to (4) and the container by the thickness of the spacer. Therefore, the state of the plasma generated by the induced magnetic field is adjusted within 3 of the induced magnetic field inside the vacuum vessel, and can be adjusted within the range of the interval = even. In other words, in the embodiment of the high-frequency power of the wider-band antenna, the supply of the high-frequency power of the wider-band antenna is more reliably suppressed. In the embodiment of the plasma processing apparatus, the number of turns of the line is different from each other. I number of co-frequency broadcasts of the same frequency. If the number of turns of the plurality of high-frequency antennas are different, the C-day high-frequency antennas have different inductances, and a plurality of components: In comparison, the range of the combined inductive reactance can be expanded. Therefore, the matching circuit for synthesizing the inductive reactance can be reconstructed, and the increase in the high frequency power supplied to the high frequency antenna can be more reliably suppressed. In one embodiment, the plurality of high frequency antennas intersecting each other as viewed from the axial direction. As described above, by placing a plurality of high frequency antennas formed into a thirsty shape on the top, The potential of the money induced by the vacuum vessel (10) causes the top to become a more negative potential. However, when all the high-frequency antennas are arranged in the same direction of the wrap, the loops and loops of the lines of the respective antennas are formed. The interval 'for example, there is no line between the first lap and the second lap, which corresponds to the area at the top of the position below the 201143554. The area under the ^ area becomes a lower negative potential: 应 should be located directly below the line The area of ί and the difficulty The part of the pile. The high number of high-profile antennas ^7 "In terms of mutual wealth, the interval between the above-mentioned high-frequency antennas and the loop line" is his two-frequency antenna, which is located in the high-frequency antenna. The area will increase. In other words, the plasma in the true bar can be expanded to the top of the negative potential:::::: In the embodiment of the electropolymerization apparatus, the input terminal is connected to the high frequency power supply via a capacitor II, and the output terminal is connected to a reference potential via an output side capacitor. The output terminal is directly connected to a predetermined reference potential. In the configuration, the potential of the input terminal of the C7 having the high-frequency antenna has an amplitude of amplitude and is oscillating. Therefore, on the input end side, the region is lightly coupled with the capacitance of the same-frequency antenna due to the region corresponding to the top portion. However, the battery potential becomes more negative with respect to the plasma potential, but on the output end side, since the capacitive coupling of the region corresponding to the top portion and the same-frequency antenna becomes smaller, it is difficult to be compared with the input end side. Become negative In the above configuration, in the above configuration, the input side portion and the output portion of the radio-frequency antenna are connected to the input side capacitor and the output side capacitor, thereby not only 疋The input side of the intermediate frequency antenna also oscillates the potential on the output side with a predetermined amplitude, and can correspond to the entire area of the top portion of the high frequency antenna, and becomes a more negative potential with respect to the plasma potential. That is, the deposit can be suppressed. The present invention further includes a magnetic field forming portion having at least three magnetic fields arranged coaxially on the outer circumference of the top portion of the above-described plasma processing apparatus. The coil * is formed inside the magnetic field coil of the middle portion to form an annular zero magnetic field region along the circumferential direction of the magnetic field coil, and the vacuum container is configured to be interposed in the inner side of the at least three magnetic field coils, and at least three segments a magnetic field coil, forming a cylindrical shape spanning the magnetic field coil of the lowermost stage to the magnetic field coil of the middle stage, containing the zero magnetic field region, and by Covering the top of said region of zero magnetic field. According to the above configuration, the zero-magnetic field region can be formed by the plurality of magnetic field coils to generate the density of the electrons by the electrons concentrated along the magnetic field gradient, and the south density is also present in the magnetic field region. The positive ions contained in the electric glory. That is, the number of positive ions introduced into the top can be increased, and the frequency at which the top is hit by positive ions can be increased, and even the deposition of deposits on the top can be more reliably suppressed. [Embodiment] Hereinafter, an embodiment in which a plasma processing apparatus of the present invention is embodied as a plasma etching apparatus will be described with reference to Figs. 1 to 4 . Fig. 1 is a view showing a schematic configuration of a plasma etching apparatus of the present embodiment. As shown in Fig. 1, the vacuum vessel 11 of the plasma etching apparatus 10 is formed into a closed circle which is axisymmetric with respect to a first axis A1 extending from the substrate S accommodated inside the vacuum vessel 11 toward the thickness direction of the substrate S. Cylindrical. The top of the vacuum vessel 11 is similarly formed into a circular plate shape which is axisymmetric with respect to the first axis A1, and is formed of a top plate 12 made of quartz as a dielectric material. The plasma generating region 11a of the internal space of the vacuum vessel 11 is provided with a 13 201143554 substrate mounting table 13' for placing a substrate S in which an object of electrical destruction is processed. The periphery of the substrate stage 13 is provided with a protective member 14 which is resistant to the plasma induced in the plasma generating region 11a or various gases which are the raw materials of the plasma for protecting the substrate mounting table 13 from These gases corrode. Further, the substrate stage 13 is connected to a bias high frequency power supply 2A for applying a predetermined bias voltage to the substrate S placed thereon. Further, a bias matching circuit 21 is provided between the substrate S and the bias high-frequency power source 2A for achieving a gas in the plasma generating region 丨丨 of the load and the high-frequency power source 20 for biasing Matching of the impedance of the transmission path of the substrate S. Viewed from the inside of the vacuum container 11, the outer side of the top plate 12 is provided with three high-frequency helical antennas 30, which are parallel to the outer surface of the top plate 12, and are on the first axis A1. The upper sides overlap on the different planes. The three-stage high-frequency helical antenna 3 is formed by a columnar input terminal 33 extending in a direction parallel to the first axis A1 and an output terminal 34 extending in a direction parallel to the first axis A1. Electrically connected in parallel. A series circuit composed of a series connection of the high frequency power source 40, the matching circuit 41, and the input side capacitor 42; and a series connection of the DC power source 44 and the low pass filter 45 are connected in parallel to the three segments. In the frequency helical antenna 30, the end of the input terminal 33 protrudes from the uppermost high-frequency helical antenna 30. The high-frequency power source 40 outputs high-frequency power for generating electric current in the plasma generating region iia, for example, high-frequency power of 13.56 MHz. The matching circuit 41 seeks to match the gas in the plasma generating region 11a to be loaded and the impedance of the transmission path from the high-frequency power source 40 to the vacuum container 11 including the high-frequency helical antenna 30. The input side capacitor 42 is capable of changing the capacity of the so-called variable capacitor. For example, the capacitance can be arbitrarily changed within the range of l〇pF to 1〇〇pF. The DC power source 44 is capable of applying a DC voltage of, for example, 0 V to -2000 kV to the power source of the input terminal 33. Further, the low pass filter 45 removes noise from the voltage input from the DC power source 44. On the other hand, an output side electric grid 43 of a so-called variable capacitor that can change the capacity is connected to an end portion of the output terminal 34 that protrudes from the uppermost high-frequency antenna 3A, and the output side capacitor 43 is connected. It is connected to the ground potential via the frame of the plasma etching apparatus 10. Further, the output side capacitor 43 is also arbitrarily changed in the range of, for example, 10 pF to 1 〇〇pf, similarly to the input side capacitor 42 described above. The high-frequency antenna provided in the plasma processing apparatus such as the plasma silver etching apparatus 1 is not limited to the above-described high-frequency helical antenna 3A, and generally the output terminal thereof is connected to a predetermined reference potential such as a ground. Only the potential of the input terminal of the high frequency antenna has a predetermined amplitude and oscillates. Therefore, in the vicinity of the input end of the high-frequency antenna, although the region is negatively charged with respect to the plasma potential due to the capacitive coupling of the region corresponding to the top plate and the frequency antenna, it is at the output end of the chirp antenna. In the vicinity, since the capacitive coupling between the region corresponding to the top plate and the frequency antenna is small, it is difficult to become a negative potential in this region as compared with the input end portion, and it is impossible to suppress deposition of deposits in the region. The inner surface of the top plate 12 formed by the dielectric body, that is, the capacitive coupling of the plasma without the frequency spiral antenna 30 and the vacuum container U, may also be caused by the impact of electrons in the plasma on the top portion 12. The negative potential 'is the self-bias potential of 24 . As described above, by the high-frequency helical antenna 3〇 and the electric (4) capacitance, the negative potential above the self-bias potential is applied to the inner surface of the top plate 12. In this regard, as in the plasma etching apparatus described above, the high-frequency spiral day 15 201143554 is correctly connected to the input terminal 33 connected to the input end, and the input side capacitor 42 is connected. Connected to the output terminal 34: there is an output side capacitor 43. Therefore, not only the high-frequency helical antenna: the input side: the potential ' also causes the potential on the output side to illuminate with a predetermined amplitude, and can correspond to the entire area of the top plate 12 of the high-frequency helical antenna 3G, according to the above capacitive coupling. 'A negative potential is formed with respect to the plasma in the vacuum vessel U. That is, it is possible to suppress deposition of deposits on the entire area of the top plate 12 of the corresponding high-frequency helical antenna 30. On the side surface of the vacuum container U, in detail, in the vicinity of the top plate 12 of the cylindrical portion, a three-stage magnetic ring 50 disposed centrally on the first axis A1 is provided. In the three-stage field coil 50, the uppermost coil 5〇u is disposed at a position closer to the high-frequency helical antenna 30 than the inner surface of the top plate 12 in the direction of the first axis Ai. Further, in the three-stage magnetic field coil 5, the middle coil 50m of the lower stage of the upper coil 50u is disposed on the inner surface of the top portion, that is, in the present embodiment, it is disposed on a plane included in the inner surface of the top plate 12, The lower coil 50b is disposed as a lower portion of the middle coil 5〇m. In other words, the three-stage field coil 50 is disposed with respect to the vacuum container 11 so that the cylindrical vacuum container 11 is inserted from the inner side of the lower coil b to the inner side of the middle coil 50m. Further, in these three coils, 5〇m, and 50b, currents having the same direction are supplied to the upper coil 5〇u and the lower coil 50b from the corresponding power supply units 51u, 51m, and 51b, respectively, and the middle coil is also applied. 5 〇m supplies and supplies a current in the opposite direction to the current supplied to the upper coil 5〇u and the lower coil 5〇b. Thereby, a ring-shaped zero magnetic field region ZMF is formed along the circumferential direction of the field coil 50, in other words, along the circumferential direction of the inner surface of the vacuum vessel 11, inside the middle coil 50m. That is, the plasma generating region ua divided by the vacuum container 11 and the top plate 12 by the above-mentioned vacuum container 11 and the top plate 12 includes the above-mentioned zero magnetic field region, and covers the above by the inner surface ' of the top plate 12 including the arrangement surface of the middle coil 亀. The zero magnetic field region ZMF' constitutes the above vacuum container u. In this way, the three-stage magnetic field coil 5 〇 and each of the power supply units 51u, 51m, 51b and the like that supply electric power constitute an example of a magnetic field forming portion. Further, the vacuum container U has a gas introduction port 15 for introducing a money-cut gas which is a raw material of plasma into the plasma generation region Ua, and the gas introduction port 15 is connected to the gas supply portion 6 () for Various surname gases corresponding to the electric engraving process performed by the electromotive device 10 are supplied. Further, the vacuum container 11 is connected to an exhaust unit (not shown) for adjusting the inside of the plasma generation area to the predetermined power. The structure of the above-described high-frequency helical antenna 3Q will be described in detail with reference to Figs. 2 to 4, and the configurations of the input terminal 33 and the output terminal 34 connected thereto will be described in detail. Fig. 2 (8) shows a high-line antenna %, and a top view structure of the top plate 12 disposed on the side parallel thereto = Fig. 2 (8) shows a cross-sectional structure of the high-frequency helical antennas 3A and the top plate 12. As shown in Fig. 2(a), the high-frequency helical antenna 3 is formed, for example, in a main-plated line of copper or the like, and is parallel to the first portion passing through the center C1 of the circular top plate. An axis A1, and a spiral-shaped helical antenna that surrounds the circumference of the first axis A1 and the second axis A2 by 35 turns, centering on a point on the second axis A2 of the first axis A1 30 series in the same two:: any point p on the helical antenna 30 and the center C2. • On the plane containing the high-frequency helical antenna 3G, a 17 201143554 straight line L0 passing through the center 与 and the connected high-frequency helical antenna The angle formed by the line p on the 3 与 and the line at the center C2 is set as the center angle <9; and • When the rate of change of the separation distance r (a constant of 1 or more) is the distance change rate α, the equation "Γ = α 0" which satisfies the polar coordinate centered on the center C2 is satisfied. Further, the high-frequency helical antenna 30 is configured such that the distance between the lines adjacent to each other on the straight line is a distance La of a predetermined value. In the high-frequency helical antenna 30 of the known scroll shape, the input end 31 of the one end of the center C2 is connected to the above-mentioned two ends of the high-frequency helical antenna 3 The input terminal 33 is connected to the output terminal 34 of the other end portion of the other end portion different from the input end portion 33. As shown in FIG. 2(b), the three high-frequency helical antennas 3 are arranged such that the faces including the still-frequency helical antennas 30 are parallel to each other and are equal in height from the direction parallel to the second axis A2. The stacking direction DL of the frequency helical antenna 3 is the same, and the projected image projected onto the top plate 12 is the same. Therefore, the individual input end portions 31 and the output end portions 32 of the three high-frequency helical antennas 30 are linearly aligned on the line parallel to the lamination direction DL. Next, the input terminal 33 or the output terminal 34 shown in FIG. 2(b) and the region Ra or region Rb including the region of the peripheral structure as described above will be described in detail with reference to FIGS. 3(a) and 3(b). . Further, Fig. 3 (8) is an enlarged display area Ra' on the other hand, and Fig. 3 (b) is an enlarged display area Rb. As shown in Fig. 3(a), the input end portions 31 of the three high-frequency helical antennas 3 are replaced by the thicknesses of the ends of the second axis A2, in other words, through the thickness direction. A through hole in the stacking direction DL of the high-frequency helical antenna 3Q. In these through holes, a screw member 34a extending in the direction of the lamination is inserted, and the screw member 33a' as the input shaft 201143554 of the high frequency power is inserted over the entire length thereof. In the direction of the through hole, a threaded ridge and a threaded groove are provided. Further, the screw member 33a is not limited to a screw having a thread ridge and a thread groove in its entire length, and a screw having a thread ridge and a thread groove in a region screwed to another member may be used. ^ In the above-mentioned "Southern-frequency helical antenna 3", the input end of the through-hole having the uppermost stage of the high-frequency helical antenna 30 and the middle-stage high-frequency helical antenna 3〇 in the stacking direction d1 is penetrated. The hole 31a has the same shape and has a diameter larger than the diameter of the screw member 33a inserted therein. On the other hand, the input end through-hole 31b of the through-hole having the lowermost stage of the high-frequency helical antenna 3A in the layering direction DL has a diameter smaller than that of the input end through-hole 31a, and can be formed and inserted therein. In the screw member 33a, the screw member 33a is screwed in such a manner that the end surface of the screw member 33a in the insertion direction is aligned with the surface of the top plate 12 of the lowermost high-frequency helical antenna 3A. The through hole 31b is inserted at the input end. Further, between the upper-stage high-frequency helical antenna 3〇 and the middle-stage high-frequency helical antenna 30, and the middle-stage high-frequency helical antenna (10) and the lowermost high-frequency=wire antenna 3G, respectively Conductive cylindrical input spacer 33b. Each of the input spacers 33b has a spacer through-hole 33c through which the screw member 33a is inserted, and the diameter of the hole 33C is equal to the input end through-hole 31a. Further, the opening of the input end through hole of the high-line antenna 3 () of the upper and middle sections is sighed, and the opening of the spacer Beacon 33e of the input spacer 33b sandwiched between the upper and middle sections is caused. In the form of configuring the input spacers to hungry. a spacer through-hole 33c of the partition 33b of the input end through-hole 31a of the high-frequency helical antenna 30 in the middle stage and the high-frequency helical antenna 30 sandwiched between the middle stage and the lowermost stage The opening is in the same form, and the input spacer 33b is placed with 201143554. Then, the outer surface of the screw member 33a inserted into the input end through hole 31a and the spacer through hole 33c is separated from the inner surface of the input end through hole 31a by a certain distance Lc, and the outer surface of the screw member 33a is The inner surface of the spacer through hole 33c is disposed so as to be separated by the same distance Lc. Further, in the both end portions of the stacking direction DL of the screw member 33a, the end portion of the high-frequency helical antenna 30 that protrudes from the uppermost stage is disposed at the uppermost high-frequency helical antenna 30. A nut 33d having conductivity is screwed in a form in which the input spacer 33b directly below is pressed downward. According to this configuration, the distance between the upper-stage high-frequency helical antenna 30 and the middle-stage high-frequency helical antenna 30 in the lamination direction DL is higher, and the middle-stage high-frequency helical antenna 30 and the lowermost portion are higher. The distances in the stacking direction DL between the frequency helical antennas 30 are defined by the thickness Lb of the stacking direction DL of the input spacers 33b, respectively. Further, the distance between the inner surface of the input end through-hole 31a of each of the uppermost and middle stages of the high-frequency helical antenna 30 and the outer surface of the screw member 33a is maintained at the above-described distance Lc, and the spacer through-hole of each input spacer 33b The distance between the inner surface of the 33c and the outer surface of the screw member 33a is also maintained at the above-described distance Lc. Then, the input end portions 31 of the respective high-frequency helical antennas 30 are electrically connected to each other via the input spacers 33b, and the positions of the members are fixed. Further, in the present embodiment, the position of the high-frequency helical antenna 30 and the input spacer 33b is fixed by the conductive nut 33d screwed to the screw member 33a on the premise of maintaining the electrical connection between the members. However, the present invention is not limited thereto, and the member may be fixed by a nut made of a non-conductive material, or may be replaced with, for example, the input end through hole 31a of the uppermost high-frequency helical antenna 30. The lower-stage high-frequency helical antenna 30 is fed 20 201143554. The inlet-end through-hole 31b is of the same type and is screwed to the screw member 33a, thereby maintaining the electrical connection between the members without being fixed by the nut 33d, or Alternatively, a coupling structure for coupling and fixing the contact between the high-frequency helical antenna 30 and the wheel-in spacer 33b sandwiched therebetween may be provided to fix the position of the member. On the other hand, as shown in FIG. 3(b), the output end portions 32 of the three high-frequency helical antennas 3, in other words, the end portions of the respective high-frequency helical antennas 30 are different from the above-described inputs. The end portions of the end portions 31 are respectively provided with output terminals 34 having substantially the same configuration as the above-described input terminals 33. That is, the uppermost and middle high frequency helical antennas 30 in the lamination direction DL have the output end through holes 32a', and the lowermost high frequency helical antenna 30 has the output end through holes 32b. Further, between the upper-order high-frequency helical antenna 30 and the middle-stage high-frequency helical antenna 30, and between the middle-stage high-frequency helical antenna 30 and the lowermost high-frequency helical antenna 30, respectively, the input interval is The material 33b is the same 'provided with a cylindrical output spacer 34b having conductivity. The output spacers 34b have through holes 34C having the same diameter as the through-holes of the output end. The output end through-holes, and the through-holes W are inserted into the screw member 34a. The screw member % is connected to the ground potential by the output side capacitor 43 and the frame of the electric private (four) 1Q. The output shaft of electricity. Further, the screw member 34a through which the members are inserted is the same as the screw member 33a of the input terminal 3, which is the same as the screw member 33a of the lowermost portion, and the lowermost high-frequency spiral. + The output end of the wire 30 is screwed through the through hole 32b. Further, the position of the four members (four) of the screw-shaped stomach high-frequency helical antenna is placed in the form of being pressed directly below, and is screwed to the screw member 34a. As described above, the three high frequency starters', the tapping antenna 30 are connected to the input end portion 31 201143554 and the output end portion 32 via the input terminal 33 and the wheel terminal 34. Further, the input terminal 33 and the output worm 34 are constituted by the screw members 33a and 33a, the input spacer 33b, and the output spacer 3'. The screw members 33a and 33a are inserted into the input end portions 31° = the input end through holes 31a and 31b and the output end through holes 32a and 32b provided in the output end portion 32, in other words, can be penetrated therethrough. Holes 31 & 31 and 32b are loaded and unloaded. The input spacers 33b and the output spacers 34b are inserted into the & screw members 33a and 34a, in other words, the screw members 33 & ', 14 & In other words, the high-frequency antenna 30, the input spacer 33b, and the output spacer 3 can be removed from the screw members 33a, 34a to reduce the number of the high-frequency helical antennas 30, "inserted in the screw member 33a, % After the spacer 33b and the output spacer 34b, a new high-frequency helical antenna 30 can be provided. The screw members 33a of 31a and 31b, the input spacers 33b therebetween, and the input terminals 33 which are formed by crying. In the present embodiment, one of the terminals of the high-frequency power source 4 (four) is connected to each of the high-frequency helical antennas 30 by, for example, a through-hole through hole inserted in the high-frequency antenna 3 ().
此等輸入間隔物33b之間隔物貫通孔故的螺釘構件33a 而構成的輸入搞合部。 又，經由輸出側電容器43連接至接地電位的端子之一The input engagement portion of the spacer 33b is inserted through the screw member 33a of the hole. Further, one of the terminals connected to the ground potential via the output side capacitor 43
22 201143554 構成的輸出端子34。又，处私》t > 耗合及脫離的輕合部之—線％之端部 + 4* ^ ^ a , 例係例如藉由以輸出端部32被 構成的輸出輕合部間^物貝通孔^的螺釘構件池而 一槪2右對上述輸入端子33供給來自高頻電源40的 冋=力，則從與高頻電源4〇電性連接的螺釘構件仏， =最：段的高頻螺線天線3〇之輸入端部31，供給高頻 30==觸的輸入間隔物现、中段的高頻螺線天線 Π 端部31、與該輸入端部31接觸的輸入間 ，物饥、及最上段的高頻螺線天線30之輸入端部3卜換 句話說，二個高頻螺線天線30係電性並聯連接。另外，如 ’螺釘構件仏係與最上段及中段的高頻 螺，天線30、輸入間隔物33b共同藉由具導電性的螺帽观 T定時’供給至螺釘構件33a的高頻電力，經由透過該螺 帽33d亦可供給至各高頻螺線天線30或輸入間隔物33b。 ^圖4係顯示疊層的上述三個高頻螺線天線30之立體構 如同圖4所示，三個高頻螺線天線3〇係利用其輸入端 部31及輸出端部32,藉由與第二軸線A2平行之柱狀的輸 入端子33、及同樣與第二轴線A2平行之柱狀的輸出端子 34丄相互地固定。又，在最上段的高頻螺線天線30與中段 的局頻螺線天線30之間，及中段的高頻螺線天線3〇與最 下段的高頻螺線天線3〇之間，且在構成此等高頻螺線天線 的線路之途中，配置有由絕緣性材料所構成的輔助間隔 物35此4辅助間隔物35係分別在與最上段的高頻螺線 天線30相接的面、及與中段的高頻螺線天線3〇相接的面， 23 201143554 具有對應該高頻螺線天線30的形狀而形成，以固定高頻螺 線天線30的凹部。另外，辅助間隔物35之從上述凹部之 底面起的疊層方向DL之厚度，係與各輸入端子33及輸出 端子34所具有的輸入間隔物33b及輸出間隔物34b之同疊 層方向DL的厚度Lb相同。 由於如此地在各高頻螺線天線30間設置具有與上述 輸入及輸出間隔物33b、34b之上述厚度Lb相同厚度之絕 緣性的輔助間隔物35，所以各高頻螺線天線30之全體中， 其間隙可維持在等於輸入間隔物33b與輸出間隔物34b之 厚度的距離Lb。亦即，可抑制三個高頻螺線天線30在線 路之途中相互地接觸，且可確實地維持由各高頻螺線天線 3 0所構成的並聯電路。 當在此種電漿蝕刻裝置10中，對處理對象之基板S施 以電漿蝕刻處理之際，首先，從設置於該電漿蝕刻裝置10 的搬入口將基板S搬入至該電漿蝕刻裝置10的真空容器 11内，載置於上述基板載置台13上。其次，以相應於電 漿蝕刻處理之各條件的流量，從上述氣體供給部60供給蝕 刻氣體至電漿生成區域11a内。如此，若供給蝕刻氣體至 電漿生成區域11a内，則藉由上述排氣裝置，使電漿生成 區域11a内形成，亦與上述電漿蝕刻處理之條件相應的壓 力。另外，來自上述氣體供給部60的蝕刻氣體之供給，以 及依排氣裝置所進行的電漿生成區域11a之排氣，係在電 漿蝕刻處理之實施中持續進行，藉由此等的協調動作，使 電衆生成區域11a内維持在預定的壓力。 其次，在上述磁場線圈50之上段線圈50u與下段線圈 50b供給同一方向的電流，另一方面，在中段線圈50m供 24 201143554 給與此等相反方向的電流，在中段線圈50m之内侧，電聚 生成區域11a之内部形成零磁場區域ZMF。隨之，從高頻 電源40經由匹配電路41及輸入侧電容器42，供給例如 13_56MHz之高頻電力至高頻螺線天線30。另外，供給至 高頻螺線天線30之電力，如上所述，係從高頻螺線天線 30之疊層方向DL的最上段的高頻螺線天線30突出的輸入 端子33之螺釘構件33a導入。之後，從最下段的高頻螺線 天線30向最上段的高頻螺線天線30，或是從螺帽33d向 最上段的南頻螺線天線3 〇供給。如此，藉由對高頻螺線天 線30供給高頻電力，就可在上述零磁場區域ZMF形成感 應電場’感應出以蝕刻氣體為原料的電漿。 此時’在電漿生成區域11a内感應的電漿與高頻螺線 天線30,經由該電漿生成區域Ua之外侧的外氣或頂板12 電容性耦合。因該電漿生成區域lla之外側的外氣或頂板 12所具有的電容通常遠大於電漿生成區域Ua所具有的電 容，所以在高頻螺線天線30與電漿之間的各電容成分所分 配的電位差係在上述頂板12之内表面最大。藉此，頂板 12之内表面成為帶負電的狀態，即所謂的被提供負直流偏 壓（負自偏壓）的狀態。 又，在上述高頻螺線天線3〇中，除了高頻電源4〇供 給的高頻電力以外，亦從直流電源44經由低通濾波器45 連續性或脈波性地施加例如_丨之直流電壓。換句話 說，施加至向頻螺線天線3〇的電壓係指高頻電壓與直流電 壓相重豐所得者。藉由此種直流電壓之施加，高頻螺線天 線30與電漿生成區域Ua内之電衆亦電容性輕合，且由介 電體所構成的頂板12之内表面係被提供負的直流偏壓。另 25 201143554 外，依尚頻電壓之此加所得的負自偏壓係藉由在電衆生成 區域lla内所生成的電子之撞擊而提供，相對於此，依直 流電壓之施加所得的負偏壓係藉由施加於高頻螺線天線3〇 的負直流電壓而直接提供。又，施加於高頻螺線天線3〇的 直流電壓，如上所述，畢竟是被依高頻電力而生成的電漿 與高頻螺線天線30之電容性耦合而消耗，該直流電壓並益 助於電漿之生成。 之後，從上述偏壓用高頻電源2〇供給例如13 56MHz 之高頻電力至基板S，藉此，相應於該高頻電力的偏壓電 壓即施加於該基板S。藉由施加於該基板s的偏壓電壓， 存在於電漿生成區域lla内的活性種，尤其是正離子就會 被引入基板s，發揮作為蝕刻劑的功能。如此，基板s二 預定區域就會沿著其垂直方向、換言之其厚度方向被敍刻。 在此，若對於如上述的基板S實施電漿韻刻處理，則 從處理對象的上絲板s之構成材㈣出的粒子，或來自 同基板S的構成材料與蝕刻氣體之反應所得的生成物，或 者，來自敍刻氣體之解離物等的累積量， 韻 ^處理進行而增大。而且，此等各種物㈣在上述 内’按照II由來自上述氣體供給部6G的氣體供給及 日上述排氣裝置之排氣而形成的氣體之流動， 空容器U之内表面，且附著於此。如上所述，在環= 2線配置於頂部之外表面的習知構成中，雖然上述^ ，積在與該高頻環狀天線之外周對應的頂部之内表 :外以外的部位’尤其是對應較高頻環狀天線 積附i物罪而曰側之區域的頂板12之内表面，卻很容易堆 ， 。且，堆積於該頂板12的附著物，會因真空容 26 201143554 器11内實施的電漿蝕刻處理時之溫度或真空容器的内壓 等之條件而從頂部剝離，恐有污染基板S之虞。 關於此點，在本實施形態中，由於是採用渦捲狀之高 頻螺線天線30作為高頻天線，所以與外周的大小和該高頻 螺線天線30相同的高頻環狀天線相較，對應高頻螺線天線 30之外周的頂板12之區域自不在話下，就連對應比該外 周還更靠近内側的頂板12之區域，也能相對於真空容器 11内之電漿形成負電壓，且可將電漿中所含有的正離子引 入於此等區域。亦即，藉由正離子對頂板12之撞擊，就可 抑制電漿或使用該電漿之蝕刻處理而得的附著物堆積於頂 板12。 而且，在本實施形態中，由於對高頻螺線天線3〇供給 咼頻電力的同時亦施加直流電壓，所以在上述頂板12之内 表面係被賦予因高頻電力而得的負偏壓及因直流電壓而得 的負偏壓。因而，僅是如此地被賦予因直流電壓而得的負 偏壓，就可增加引入頂板12之内表面的正離子，甚至更可 抑制附著物堆積於頂板12。 又，藉由如此地將正離子引入頂板12之内表面，使該 内表面被濺鍍，附著物或頂板12之形成材料被釋放至電漿 生成區域11a内作為濺鍍粒子時，所謂的二次電子也會被 釋放。此種二次電子係有助於撞擊供給至電漿生成區域Ua 内的蝕刻氣體之分子而將此電漿化的反應。因此，藉由如 上述的頂板12之濺鍍反應，亦可使生成於電漿生成區域 11a内的電漿松度增大。另外，此種電漿密度之增大效果， 也會在高頻電壓重疊直流電壓作為對於高頻螺線天線3〇 的施加電壓時變得更大。 27 201143554 然而，與上述環狀狀 天線3 0由於其線路長声較^ 相較，各個高頻螺線 高。例如’將此種高頻螺線"天^7 ^感較高，且感抗也較 漿蝕刻裝置10時，其合成、串聯搭載複數個於該電 所具有的自感之和，且二艇硬，係為各個高頻螺線天線30 數個高頻螺線天線3〇全體的、、〇之數量越增加，複 大。相對於此，將複數個高頻』』卩合成電感就會越增 合成電感成為各個高頻螺線天線、’、3G並聯連接時，其 和的倒數此，合成電感係比各個^具有的自感之倒數 有的自感還更小，而且，越增大高^_線天線30所具 相對於各個高頻螺線天線3Q之自^線天線3G之數量， 度就越大。 S 、合成電感的降低程 在電漿處理裝置中，通常謀求從亦 頻電源至真空容器之傳輸路的阻抗、與包含：的Ά 器之阻抗的匹配。藉此，從高頻電源施加 高頻電力會抑制以反射波反射至高頻電源側，且抑制= 於電漿生成的高頻電力。又，料傳輪路之阻抗 = 器之阻抗的匹配，-般係藉由在傳輪略中的上述高頻 之前段設置匹配電路來實現。上述匹配電路W係使用電感 器或電容器而構成’具有抵銷傳輸路的阻抗與真空容器^ 的阻抗之差的阻抗。然而，若阻抗因採用渦捲狀的高頻螺 線天線30而增加，則設置於高頻螺線天線3〇與高頻電源 40之間的匹配電路41中，必須進行使容抗降低的補正^ 高頻電力之傳輸路中的寄生電容等會帶給阻抗之匹配本身 很大影響。 關於此點’若如上所述將三個高頻螺線天線3〇並聯連 28 201143554 接，則可使高頻螺線天線30全體的自感與環狀之高頻天線 大致相同，並且能按照真空容器11之阻抗，進行高頻螺線 天線30之增設及減設。亦即，隨著設置上述渦捲形狀之高 頻螺線天線30造成的容抗之降低，其比例也被抑制，減輕 傳輸路所具有的寄生電容帶給阻抗匹配的影響，而可抑制 電漿之不穩定化。再者，可抑制有助於電漿之感應的電力 量損失。換句話說，不僅是抑制因阻抗之不匹配所造成的 電漿狀態之不穩定化或因此而造成的電力損失，即使是在 該電漿蝕刻裝置10實施的蝕刻處理條件之變更而使感應 電漿之狀態變動，因而增大傳輸路與真空容器u之内部的 阻抗差，亦因高頻螺線天線3〇之個數的變更，藉由高頻螺 線天線30本身而謀求阻抗之匹配。故而，可一邊抑制電漿 敍刻裝置10之通用性降低，一邊抑制附著物堆積於真空容 器11之頂板12。 以上，依據本實施形態的電漿處理裝置，可獲得以下 列舉的效果。 (1) 採用渦捲狀之高頻螺線天線30作為高頻天線。藉 此’與外周的大小和該高頻螺線天線3〇相同的高頻環狀天 線相較，對應高頻螺線天線之外周的頂板12之區域自不在 話下’就連對應較該外周更靠近内側的頂板12之區域，也 能對於真空容器11内之電漿形成負電壓，且可將電漿中所 含有的正離子引入此等區域。亦即，藉由正離子對頂板12 之撞擊，可抑制電漿或使用該電漿之蝕刻處理而得的附著 物堆積於頂板12。 (2) 設置三段高頻螺線天線3〇，並且將此等高頻螺線天 線3〇進行並聯連接。藉此，可使三段高頻螺線天線3〇全 29 201143554 高頻環狀天線大致相同。亦即，可抑制 隨者》又置同頻螺線天線3〇所 減輕傳輸路所具有的寄生 的办抗之降低比例’並可 抑制電漿之不穩定化 ^帶給阻抗匹配的影響’且可 電力量之損失。換句話說，可抑制有助於電漿之感應的 的電漿狀態之不穩定化或因I抑制因阻抗之未匹配所造成 (3) 將三段高頻螺線此而造成的電力損失。 高頻螺線天線30的翰相互固定之際，使用與各 33、以及與各該高艘缟部31耦合及脫離的輸入端子 離的輸出端子34。心卜線天線％的輪出端部32耦合及脫 及減設，即使是在該行高頻螺線天線3〇之增設 之變更而使感應電聚之^置1 〇實施的钱刻處理條件 容器11之内部的ρ 〜、變動’因而增大傳輸路與真空 的變更，藉由高頻螺It ^可因高頻螺線天線3G之個數 而，可抑制電_^置本身而課求阻抗之匹配。故 (4) 在高頻螺通用性降低。 間隔物34b。M、扑^ 3〇間夾入輸入間隔物33b及輸出 33b之厚度精由位於疊層方向DL的輸入間隔物 31間之距^，更且夾該輸入間隔物33b的一對輸入端部 之厚度Lb界定包於疊層方向DL的輸出間隔物34b 距離、即高頻雷夬~雨出間隔物34b的輸出端部32間之 層方向傳輸路的長度。此外，遍及於鄰接疊 成相應於此等輸線天線％之間的大致全體，可形 之厚度U的空間33b之厚度Lb與輸出間隔物糾 高頻電力之傳果，三個高頻螺線天線3G個別的 與真空容考=長度，以及三個高頻螺線天線30個別 °之内部的間隔，可藉由此等輸入及輸出間隔22 201143554 The output terminal 34 is constructed. Further, the privatization "t > the end of the line % 4 4 4 + + + + + + + + + + + + + + 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 The screw member pool of the Beton hole ^2 is supplied to the input terminal 33 with the 冋=force from the high-frequency power source 40, and the screw member is electrically connected to the high-frequency power source 4〇, = most: The input end portion 31 of the high-frequency helical antenna 3 is supplied with a high-frequency 30==touch input spacer, a middle-end high-frequency helical antenna 端 end portion 31, and an input contact with the input end portion 31. The hunger, and the input end portion of the uppermost high-frequency helical antenna 30. In other words, the two high-frequency helical antennas 30 are electrically connected in parallel. In addition, the high-frequency electric power supplied to the screw member 33a by the antenna member 30 and the input spacer 33b together with the high-frequency screw of the uppermost and middle sections of the screw member and the input spacer 33b are transmitted through the high-frequency power supplied to the screw member 33a. The nut 33d can also be supplied to each of the high-frequency helical antennas 30 or the input spacers 33b. 4 is a perspective view showing the three high-frequency helical antennas 30 of the laminated structure as shown in FIG. 4, and the three high-frequency helical antennas 3 are configured by using the input end portion 31 and the output end portion 32 thereof. The columnar input terminal 33 parallel to the second axis A2 and the columnar output terminal 34A which is also parallel to the second axis A2 are fixed to each other. Further, between the uppermost high-frequency helical antenna 30 and the intermediate-frequency local-frequency helical antenna 30, and between the middle-stage high-frequency helical antenna 3〇 and the lowermost high-frequency helical antenna 3〇, In the middle of the line constituting the high-frequency helical antenna, an auxiliary spacer 35 made of an insulating material is disposed, and the four auxiliary spacers 35 are respectively on the surface that is in contact with the uppermost high-frequency helical antenna 30. And a surface that is in contact with the high-frequency helical antenna 3〇 of the middle stage, 23 201143554 has a shape corresponding to the shape of the high-frequency helical antenna 30 to fix the concave portion of the high-frequency helical antenna 30. Further, the thickness of the auxiliary spacer 35 in the lamination direction DL from the bottom surface of the recessed portion is the same as the stacking direction DL of the input spacer 33b and the output spacer 34b of each of the input terminal 33 and the output terminal 34. The thickness Lb is the same. Since the auxiliary spacers 35 having the same thickness as the thickness Lb of the input and output spacers 33b and 34b are provided between the respective high-frequency helical antennas 30, the entire high-frequency helical antenna 30 is provided. The gap can be maintained at a distance Lb equal to the thickness of the input spacer 33b and the output spacer 34b. That is, it is possible to suppress the three high-frequency helical antennas 30 from coming into contact with each other on the way of the line, and it is possible to surely maintain the parallel circuit composed of the respective high-frequency helical antennas 30. In the plasma etching apparatus 10, when the substrate S to be processed is subjected to the plasma etching treatment, first, the substrate S is carried into the plasma etching apparatus from the inlet of the plasma etching apparatus 10. The vacuum container 11 of 10 is placed on the substrate stage 13 described above. Next, the etching gas is supplied from the gas supply unit 60 to the plasma generating region 11a at a flow rate corresponding to each condition of the plasma etching treatment. As described above, when the etching gas is supplied into the plasma generating region 11a, the pressure is generated in the plasma generating region 11a by the above-described exhausting means, and also in accordance with the conditions of the plasma etching treatment. Further, the supply of the etching gas from the gas supply unit 60 and the exhaust of the plasma generation region 11a by the exhaust device are continued during the execution of the plasma etching process, and the coordinated operation is performed by the plasma etching process. The inside of the electric generation area 11a is maintained at a predetermined pressure. Next, the upper coil 50u and the lower coil 50b are supplied with current in the same direction, and the middle coil 50m is supplied with 24 201143554 to give current in the opposite direction, and the inner coil 50m is electrically integrated. The inside of the generation region 11a forms a zero magnetic field region ZMF. Accordingly, high-frequency power of, for example, 13_56 MHz is supplied from the high-frequency power source 40 to the high-frequency helical antenna 30 via the matching circuit 41 and the input side capacitor 42. In addition, as described above, the electric power supplied to the high-frequency helical antenna 30 is introduced from the screw member 33a of the input terminal 33 that protrudes from the uppermost high-frequency helical antenna 30 in the lamination direction DL of the high-frequency helical antenna 30. . Thereafter, it is supplied from the lowermost high-frequency helical antenna 30 to the uppermost high-frequency helical antenna 30 or from the nut 33d to the uppermost south-frequency helical antenna 3?. As described above, by supplying high-frequency power to the high-frequency helical antenna 30, an induced electric field can be formed in the zero-magnetic field region ZMF to induce plasma using the etching gas as a raw material. At this time, the plasma induced in the plasma generating region 11a and the high-frequency helical antenna 30 are capacitively coupled via the outside air or the top plate 12 on the outer side of the plasma generating region Ua. Since the external air or the top plate 12 on the outer side of the plasma generating region 11a has a capacitance much larger than that of the plasma generating region Ua, the capacitance components between the high-frequency helical antenna 30 and the plasma are The potential difference assigned is the largest on the inner surface of the top plate 12 described above. Thereby, the inner surface of the top plate 12 becomes a negatively charged state, that is, a state in which a negative DC bias voltage (negative self-bias voltage) is supplied. Further, in the high-frequency helical antenna 3A, in addition to the high-frequency power supplied from the high-frequency power source 4, a DC such as _丨 is continuously or pulsatingly applied from the DC power source 44 via the low-pass filter 45. Voltage. In other words, the voltage applied to the frequency helical antenna 3 系 refers to the high frequency voltage and the direct current voltage. With the application of such a DC voltage, the high-frequency helical antenna 30 is capacitively coupled with the electric potential in the plasma generating region Ua, and the inner surface of the top plate 12 composed of the dielectric body is supplied with a negative direct current. bias. In addition, the negative self-bias voltage obtained by the addition of the voltage of the frequency is provided by the impact of electrons generated in the electricity generation region 11a, and the negative bias due to the application of the DC voltage. The pressure system is directly provided by a negative DC voltage applied to the high frequency helical antenna 3〇. Further, as described above, the DC voltage applied to the high-frequency helical antenna 3〇 is consumed by the capacitive coupling of the plasma generated by the high-frequency power and the high-frequency helical antenna 30, and the DC voltage is also beneficial. Helps the generation of plasma. Thereafter, high-frequency power of, for example, 13 56 MHz is supplied from the bias high-frequency power source 2 to the substrate S, whereby the bias voltage corresponding to the high-frequency power is applied to the substrate S. The active species present in the plasma generating region 11a, particularly the positive ions, are introduced into the substrate s by the bias voltage applied to the substrate s, and function as an etchant. Thus, the predetermined area of the substrate s is scribed along its vertical direction, in other words, its thickness direction. Here, when the plasma processing is performed on the substrate S as described above, the particles from the constituent material (four) of the upper wire sheet s to be processed or the constituent materials from the same substrate S and the etching gas are generated. The cumulative amount of the object, or the dissociation from the gas, is increased by the processing. Further, in the above-mentioned various items (4), the flow of the gas formed by the gas supply from the gas supply unit 6G and the exhaust gas of the exhaust unit in accordance with II is carried out, and the inner surface of the empty container U is attached thereto. . As described above, in the conventional configuration in which the ring = 2 line is disposed on the outer surface of the top portion, although the above-mentioned portion is integrated in the top portion corresponding to the outer circumference of the high-frequency loop antenna: the portion other than the outer portion is particularly corresponding to The high-frequency loop antenna accumulates the object and the inner surface of the top plate 12 of the region on the side of the side is easily piled up. Further, the deposit deposited on the top plate 12 may be peeled off from the top due to the temperature during the plasma etching treatment performed in the vacuum chamber 26 or the internal pressure of the vacuum container, etc., and the substrate S may be contaminated. . In this regard, in the present embodiment, since the spiral-shaped high-frequency helical antenna 30 is used as the high-frequency antenna, it corresponds to the same high-frequency loop antenna as the high-frequency helical antenna 30. The region of the top plate 12 on the outer periphery of the high-frequency helical antenna 30 can be formed with a negative voltage with respect to the plasma in the vacuum vessel 11 even if it corresponds to the region of the top plate 12 which is closer to the inner side than the outer circumference. Positive ions contained in the plasma can be introduced into such regions. That is, by the impact of the positive ions on the top plate 12, the deposition of the plasma or the etching treatment using the plasma can be suppressed from being deposited on the top plate 12. Further, in the present embodiment, since the DC voltage is applied to the high-frequency helical antenna 3A, the DC voltage is applied to the inner surface of the top plate 12, and the negative bias voltage due to the high-frequency power is applied to the inner surface of the top plate 12. Negative bias due to DC voltage. Therefore, only the negative bias due to the direct current voltage is given, so that the positive ions introduced into the inner surface of the top plate 12 can be increased, and even the deposition of deposits on the top plate 12 can be suppressed. Further, by introducing positive ions into the inner surface of the top plate 12 such that the inner surface is sputtered, the material for forming the deposit or the top plate 12 is released into the plasma generating region 11a as a sputtered particle, so-called two Secondary electrons will also be released. Such a secondary electron system contributes to the reaction of colliding the molecules of the etching gas supplied into the plasma generating region Ua. Therefore, the plasma looseness generated in the plasma generating region 11a can be increased by the sputtering reaction of the top plate 12 as described above. Further, the effect of increasing the density of the plasma is also made larger when the high-frequency voltage overlaps the DC voltage as the applied voltage to the high-frequency helical antenna 3A. 27 201143554 However, compared with the above-mentioned loop antenna 30, the high frequency spiral is high due to the long sound of the line. For example, when the high-frequency spiral is high and the inductive reactance is higher than that of the plasma etching apparatus 10, it is synthesized and connected in series to the sum of the self-inductances of the electric power, and The boat is hard, and each of the high-frequency helical antennas 30 has a plurality of high-frequency helical antennas, and the number of the cymbals is increased. On the other hand, when a plurality of high-frequency 卩 卩 卩 电感 电感 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩The self-inductance of the reciprocal of the sense is still smaller, and the greater the number of the self-wire antennas 3G of the high-frequency helical antennas 3Q with respect to the respective high-frequency helical antennas 3Q, the greater the degree. S. Reduction procedure of the combined inductor In the plasma processing apparatus, the impedance of the transmission path from the neutral power supply to the vacuum container is generally matched with the impedance of the included converter. Thereby, the application of the high-frequency power from the high-frequency power source suppresses the reflection of the reflected wave to the high-frequency power source side, and suppresses the high-frequency power generated by the plasma. Moreover, the impedance of the material transmission path = the matching of the impedance of the device is generally achieved by setting a matching circuit in front of the above-mentioned high frequency in the transmission wheel. The matching circuit W constitutes an impedance having a difference between the impedance of the transmission path and the impedance of the vacuum container ^ using an inductor or a capacitor. However, if the impedance is increased by the use of the spiral-shaped high-frequency helical antenna 30, the matching circuit 41 provided between the high-frequency helical antenna 3A and the high-frequency power source 40 must perform correction for reducing the capacitive reactance. ^ The parasitic capacitance in the transmission path of high-frequency power will have a great influence on the matching of the impedance itself. In this regard, if the three high-frequency helical antennas 3 are connected in parallel to the connection of 201143554 as described above, the self-inductance of the entire high-frequency helical antenna 30 can be made substantially the same as that of the ring-shaped high-frequency antenna, and can be followed. The impedance of the vacuum vessel 11 is used to add and subtract the high-frequency helical antenna 30. That is, as the capacitive reactance caused by the above-described spiral-shaped high-frequency helical antenna 30 is lowered, the ratio is also suppressed, and the parasitic capacitance of the transmission path is alleviated to affect the impedance matching, and the plasma can be suppressed. Destabilization. Further, it is possible to suppress the amount of power loss which contributes to the induction of the plasma. In other words, it is possible to suppress not only the instability of the plasma state due to the impedance mismatch or the power loss caused by the impedance, but also the induction of electricity by the change of the etching treatment conditions performed by the plasma etching apparatus 10. When the state of the slurry fluctuates, the impedance difference between the transmission path and the inside of the vacuum container u is increased, and the impedance of the high-frequency helical antenna 30 itself is matched by the change of the number of the high-frequency helical antennas 3〇. Therefore, it is possible to suppress deposition of deposits on the top plate 12 of the vacuum container 11 while suppressing the decrease in versatility of the plasma squeezing device 10. As described above, according to the plasma processing apparatus of the present embodiment, the effects listed below can be obtained. (1) A spiral-shaped high-frequency helical antenna 30 is used as a high-frequency antenna. By this, the area of the top plate 12 corresponding to the outer periphery of the high-frequency helical antenna is relatively simple as compared with the high-frequency loop antenna having the same outer circumference and the high-frequency helical antenna 3〇. The region of the inner top plate 12 can also form a negative voltage for the plasma in the vacuum vessel 11, and positive ions contained in the plasma can be introduced into these regions. That is, by the impact of the positive ions on the top plate 12, it is possible to suppress deposition of the plasma or the deposit obtained by the etching treatment using the plasma on the top plate 12. (2) Set the three-stage high-frequency helical antenna 3〇 and connect these high-frequency helical antennas 3并联 in parallel. Thereby, the three-stage high-frequency helical antenna 3 can be made substantially the same as the 201143554 high-frequency loop antenna. That is, it is possible to suppress the reduction ratio of the parasitic resistance of the transmission path by the same-frequency helical antenna 3〇 and to suppress the influence of the unstable instability of the plasma to the impedance matching' The loss of power can be. In other words, it is possible to suppress the destabilization of the plasma state which contributes to the induction of the plasma or to the suppression of the impedance due to the I-resistance. (3) The power loss caused by the three-stage high-frequency spiral. When the high-frequency helical antennas 30 are fixed to each other, the output terminals 34 that are separated from the input terminals that are coupled to and disconnected from the respective high-sleeve portions 31 are used. Coupling and decoupling of the wheel end portion 32 of the centenna antenna %, even if the addition of the high-frequency helical antenna 3 in the row is changed, the inductive electrocoagulation is performed. ρ 〜 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Impedance matching. Therefore, (4) the versatility of the high frequency screw is reduced. Spacer 34b. The thickness of the input spacer 33b and the output 33b sandwiched between M and 3 is the distance between the input spacers 31 in the stacking direction DL, and the pair of input ends of the input spacer 33b are sandwiched. The thickness Lb defines the length of the layer-direction transmission path between the output spacers 34b of the stacking direction DL, that is, the output end 32 of the high-frequency thunder to rain-out spacers 34b. In addition, the thickness Lb of the space 33b of the thickness U and the output spacer correct the high-frequency power, the three high-frequency spirals, over the entire entirety between the adjacent stacks corresponding to the % of the line antennas. The spacing between the individual antenna 3G and the vacuum tolerance = length, and the internal spacing of the three high-frequency helical antennas 30 can be used to input and output intervals.
C 30 201143554 物33b 34b之厚度Lb來調整。故而，漏出真空容器u之 内部的感應磁場之狀態’甚至由該感應磁場 而生成的電漿 之狀.vl，不僅可由高頻螺線天線3〇之個數來調整，也可由 輸入及輸出間隔物33b、34b之厚度Lb來調整。 (5)在設置於高頻螺線天線3〇之輸入端部31的輸入端 子33連接輸入側電容器42，並且在設置於該高頻螺線天 線30之輸出端部32的輸出端子34連接輸出側電容器43。 藉此，不僅是使尚頻螺線天線39之輸入側，亦使輸出側之 電位以預定的振幅振盪，使對應高頻螺線天線3〇的頂板 12之區域全體相對於«成為負電位。亦即，在對應高頻 螺線天線30的頂板12之區域全體中，可抑制附著物之堆 積0 ()在真空谷器11之側面的頂板12附近，設置中心配 置於同軸上的二段磁場線圈5〇。藉此，藉由三段磁場線圈 形成零磁場區域ZMF ’以藉由沿著磁場梯度而集中的電 子，生成比未形成零磁場區域ZMF時更高密度的電漿，在 該磁場區域ZMF中也存在有高密度之㈣中所含有的正 離子。亦即，可使被引入頂板12的正離子之數量增大，亦 頂板12被正離子撞擊的頻度，甚至可更確實地抑制 附者物堆積於頂板12。 一⑺咼頻螺線天線30中，除了施加高頻電力 =壓以外，還施加直流電壓。藉此’賦予上述頂板'2 的負偏壓，亦為由高頻電㈣得的偏壓與由直流 的正離子…。換句向頂板12引入 :千增加料錢，與H施加_f壓的情況 f於頂板η的濺鍍增加，甚至更可抑制附著物堆積於 201143554 該頂板12之内表面。 (8)又，藉由將高頻電壓與直流電壓重疊，可使對於頂 板12之内表面的濺鍍增加。藉此，可增大被釋放的二次電 子之量’也可增大在電漿生成區域11a内所生成的電敷之 密度。 另外，上述實施形態亦可如下地適當變更來實施。 •使用磁場線圈5 0與供給電流至此的電力供給部 51u、51m、51b，並在上述真空容器U内形成零磁場區域 ZMF，形成沿此的電漿。但不限於此，亦可未具有磁場線 圈50與電力供給部51u、51m、51b，而僅藉由高頻電源 4〇供給高頻電力至高頻螺線天線3〇而在真空容器u生' 成電漿。 •高頻螺線天線30之渦捲形狀中，單一平面上展開| 渦捲形狀，即所謂的螺線形狀自不在話下，但亦可為^ 球面上展開㈣捲形狀之職形狀，即所謂㈣牛 形狀。此時’真空容器u所具有的頂板12，並非為如‘ =平面形狀，而可為外表面成為半球面狀之所謂的圓; Μ ·二P朗線天線3G係全部為相同_狀。~$ 三個高_線天線3G，其線長亦可 1 Z捲之圈數可互為不同。例如，圖5係顯示從^第^ :止如二的方向觀看二高頻螺線天線3G疊層後^俯視 ί點Γ:5:Γ’將線路之36〇。旋轉設為1圈時，、接 視點之-側，換言之，上段 子， 2.5圈，遠離視點之一側 員螺線天線30之圈數 3〇之圈數為3.5圈。藉由種二’下段的高頻螺線天 精由此種構成，可獲得如下效果。 32 201143554 (9)若為複數個高頻螺線天線3〇之圈數相異的構成， 由於複數個高頻螺線天線30具有相異的電感，與複數個高 頻，線天線30具有相同的電感之構成相較，可使合成感抗 之範圍擴張。故而’可再建構配合合成感抗的匹配電路， 又，可更確實地抑制供給至高頻螺線天線3〇的高頻電力之 增加。 •二奴的尚頻螺線天線3〇之配置係以在上述疊層方 t DL，換言之，即平行於第二軸線A2的方向上，將此等 技衫於頂板12之外表面之形狀，相互相同地配置為前提。 亦即，各高頻螺線天線30之渦捲的方向互為相同，從上述 第一軸線A2的方向來看，線路不相互交又地配置。若依 據此種構成，將渦捲狀的高頻螺線天線3〇 上，藉此，㈣於在真空容器„賴感翻電4漿頂即板可;吏2 該頂板12成為負電位。 但是’將全部的高頻螺線天線3〇以其涡捲方向相同地 配置時，構成各高綱線天線3 〇之線路所具有的圈盘圈之 間隔、例如第1 ®與第2圈之間不存在有線路，對應於其 正下方位置的頂板12之區域’恐有較對應於線路正下方位 置的區域更難以成為負電位之虞。藉此，頂板12中係混合 有上述附著物之堆積受抑制的區域以及難以抑制該堆積二 部付〇 對此，從平彳T於第三減A2的方向來看，此等 螺線天線30係線路交叉，即渦捲的方向亦可成為相互相反 的配置ϋ如’圖6及圖7係與先前的圖5同樣地 從其上面所見的二高頻螺線天線3G疊層的俯視構造。 6所示，圈數相_二高頻螺線天線3G係其祕的方向彼 33 201143554 此相反’構成此等高頻螺線天線30的線路，在上面觀看時 呈父叉的配置。又’如圖7所示’圈數相異的二高頻螺線 天線30，更正確地說，接近視點之一侧，即上段的高頻螺 線天線30之圈數為2.5圈’另一方面，遠離視點之一側， 即下段的南頻螺線天線30之圈數為3.5圈的二高頻螺線天 線30中，亦可變更其渦捲的方向。換句話說，圖7的高頻 螺線天線30係配置成其渦捲的方向彼此相反，從上述視點 來看，高頻螺線天線30的線路彼此交又。依據此種構成， 可獲得如下效果。 (1〇)各高頻螺線天線30之圈與圈之間隔中也會存在其 他的高頻螺線天線30，位於構成高頻螺線天線3〇的線路 之正下方的頂板12之區域會增大。換句話說，相對於真空 f器11内之電漿，可使成為負電位的頂板12之區域:= 言之即被正離子撞擊的頂板12之區域擴張，使頂板12中 的上述附著物之抑制均勻化。 〆•設置於高頻螺線天線3〇間的二輸入間隔物3扑之厚 度係互為相等’並且同樣地，設置於高頻螺線天線％間的 =輸出間隔物34b之厚度亦互為相等，且與輸入間隔物现 、厚度相同。但不限於此’輸入間隔物33b亦可在疊層方 向DL具有相異的厚度，又，輸出間隔物34b亦可在疊層 =向DL具有相異的厚度。但此時，被夾入於同一高頻螺 ^天線、3〇田間的輸入間隔物33b與輸出間隔物34b，例如設 述且層方^DL中之最上段的高頻螺線天線30與中 二、累線天線30之間的輸入間隔物33b與輸出間隔物 ㈣J“叹置在中段的高頻螺線天線30與最下段的高 頻螺線天線30之間的輸入間隔物说與輸出間隔物地， 34 201143554 以成為相同的厚度為較佳。依據此種構成，可獲得如下效 果。 (11)個別的三個高頻螺線天、線3〇與真空容器U内部 之間隔’可藉由此等間隔物之厚度而在更寬的範圍内調 整。故而’漏出於真空容器U之内部的感應磁場之狀態， 甚至依該感應磁場而生成的電漿之狀態，可依間隔物之厚 度在更寬的範圍内調整。換句話說，可更確實地抑制供給 至高頻天線的高頻電力之增加。 "11 •即使從直流電源44輸出的電壓中含有雜訊的情 況，若«生成區域11a所生成的電漿充分穩定，則亦可 省略連接至直流電源44的低通遽波器45。 一 •直流電源44之連接處不限於輸入端子33，亦可為 南頻螺線天線30的輸入端子33與輸出端子％之間的其中 之-位置，更可為複數部位。但是，在直流電源44之連接 處設置有複數個的構成中，因設置複數個高頻螺線天線3〇 而被限定於使感抗降低的位置。 •從直k電源44輸出的直流電壓係施加於三段㊂ 螺線天線3 0之全部。但秘於此，亦可施加於此等高魂 線天線3G中之其中-個或是二個。此時，被施加直流臂 的高頻螺線天線30中，若包含最接近頂板12的高則 天線30’則賦予頂板12的負電位就會因直流電壓之相 而變高’進而’抑制附著物堆積於頂板12之内周面的努 也會變大。 從直&電源44對高頻螺線天線3〇之直流電壓丨 加係在對該高頻螺線天線3G供給高頻電力中持續進 不限於此，亦可在高頻電力之供給巾，_性地實施 35 201143554 外，直流電壓之施加期間或施加停止之期間係可任意設定。 •搭載於電漿蝕刻裝置10的高頻螺線天線30並不限 於三個，亦可按照在該電漿蝕刻裝置10所實施的處理之條 件，更正確地說，亦可按照從包含高頻螺線天線30的高頻 電源40至真空容器11之傳輸路，與真空容器11内的氣體 之阻抗差等，進行適當變更。另外，變更高頻螺線天線30 之數量的情況時，設置在高頻螺線天線30間的輸入間隔物 33b及輸出間隔物34b之數量也會隨之變更。 •輸入端子33與輸出端子34係由螺釘構件33a、34a 及輸入或輸出間隔物33b、34b，換言之即輸入耦合部與輸 出耦合部所構成。但不限於此，輸入端子33與輸出端子 34亦可分別為僅由螺釘構件33a、34a所成的構成。換句話 說，輸入耦合部及輸出耦合部亦可為僅由間隔物所成的構 成。此時，間隔物亦可為與高頻螺線天線30 —體成形的構 成。要言之，只要是各端子33、34相對於輸入端部31或 輸出端部32進行耦合及脫離的構成即可。 •輸出端部32亦可為其他的基準電位，而並非被接地 至電漿蝕刻裝置10。 •將高頻螺線天線30的兩端之中，將第二軸線A2通 過的端部設為輸入端部31，將與此相異的另一端部設為輸 出端部32。但不限於此，亦可將第二軸線A2通過的端部 設為連接於基準電位的輸出端部，將與此相異的另一端部 設為連接於高頻電源30的輸入端部。 •各高頻螺線天線30的輸入端部31螺合於導電性之 螺釘構件33a時，由於是經由螺釘構件33a使全部的天線 30電性連接，所以各輸入間隔物33b亦可不具導電性。同 36 201143554 樣地，各㈣螺線天線3G的輸出端部3 螺釘構件34a時，各輸出間隔物地村不、導電性之 •輸入側電容器42並非為必須。又，輪 二 43並非為必須。 又輸出側電容器 •本發明不限於上述電_刻裝置i 於電聚㈣裝置等與編刻裝置〗〇同樣地具：:= 線，並且將藉由供給至此的高頻電力而感應的電漿用 處理對象物之基板進行各種處理之其他電漿處理裝置中。 【圖式簡單說明】 圖1係顯示本發明的電漿處理裝置之-實施形態的雷 漿#刻裝置之概略構成的概略構成圖。 圖2⑷係顯示電㈣刻裝置所具有的高頻螺線天線之 平面構造的職圖；圖2(b)個示該高_線天線之 構造的剖面圖。 圖3(a)係顯示將高頻螺線天線之局部剖面構造放大的 放大剖面® ; ® 3(b)侧示將該高賴線天線之局部剖面 構造放大的放大剖面圖。 圖4係顯示南頻螺線天線之立體構造的立體圖。 圖5係顯示設置在另一實施形態之電聚餘刻裝置的高 頻螺線天線之平面構造的俯視圖。 圖6係顯不設置在另一實施形態之電漿蝕刻裝堇的高 頻螺線天線之平面構造的俯視圖。 圖7係顯示設置在另一實施形態之電漿蝕刻裝置的高 頻螺線天線之平面構造的俯視圖。 37 201143554 【主要元件符號說明】 10 電漿蝕刻裝置 11 真空容器 11a 電漿生成區域 12 頂板(頂部） 13 基板載置台 14 保護構件 15 氣體導入口 20 偏壓用高頻電源 21 偏壓用匹配電路 30 高頻螺線天線（高頻天線) 31 輸入端部 31a 、31b 輸入端貫通孔 32 輸出端部 32a 、32b 輸出端貫通孔 33 輸入端子 33a 、34a 螺釘構件 33b 輸入間隔物 33c 間隔物貫通孔 33d 、34d 螺帽 34 輸出端子 34b 輸出間隔物 34c 貫通孔 35 輔助間隔物 40 向頻電源 41 匹配電路 38 201143554 42 輸入側電容器 43 輸出側電容器 44 直流電源 45 低通濾、波器 50 磁場線圈 50u 上段線圈 50m 中段線圈 50b 下段線圈 51b、51u、51m 電力供給部 60 氣體供給部 A1 第一轴線 A2 第二轴線 Cl、C2 中心 DL 疊層方向 La、Lc 距離 Lb 厚度 L0 直線 P 點C 30 201143554 The thickness Lb of the object 33b 34b is adjusted. Therefore, the state of the induced magnetic field leaking out of the vacuum vessel u' even the shape of the plasma generated by the induced magnetic field. vl can be adjusted not only by the number of the high-frequency helical antennas 3 but also by the input and output intervals. The thicknesses Lb of the objects 33b and 34b are adjusted. (5) The input side capacitor 42 is connected to the input terminal 33 provided at the input end portion 31 of the high-frequency helical antenna 3A, and is connected to the output terminal 34 provided at the output end portion 32 of the high-frequency helical antenna 30. Side capacitor 43. Thereby, not only the input side of the still-frequency helical antenna 39 but also the potential on the output side is oscillated with a predetermined amplitude, so that the entire area of the top plate 12 corresponding to the high-frequency helical antenna 3A is set to a negative potential with respect to «. In other words, in the entire area of the top plate 12 corresponding to the high-frequency helical antenna 30, the deposition of the deposits can be suppressed. () The two-stage magnetic field centered on the coaxial line is disposed in the vicinity of the top plate 12 on the side of the vacuum valleyr 11. The coil is 5 turns. Thereby, the zero magnetic field region ZMF' is formed by the three-stage magnetic field coil to generate a higher density plasma than the electrons concentrated along the magnetic field gradient ZMF in the magnetic field region ZMF. There are positive ions contained in (4) of high density. That is, the number of positive ions introduced into the top plate 12 can be increased, and the frequency at which the top plate 12 is struck by positive ions can even more reliably suppress the accumulation of the attached matter on the top plate 12. In the one (7) chirped helical antenna 30, a DC voltage is applied in addition to the application of high frequency power = voltage. The negative bias applied to the top plate '2 is also the bias voltage from the high frequency electricity (four) and the positive ions from the direct current. In other words, the introduction of the sentence to the top plate 12: the increase in the amount of money, and the application of the _f pressure to the H. The sputtering of the top plate η is increased, and the deposition of deposits on the inner surface of the top plate 12 is further suppressed. (8) Further, by overlapping the high frequency voltage with the direct current voltage, sputtering of the inner surface of the top plate 12 can be increased. Thereby, the amount of secondary electrons to be released can be increased, and the density of the electric charge generated in the plasma generating region 11a can also be increased. Further, the above embodiment can be implemented by appropriately changing as follows. The magnetic field coil 50 and the power supply portions 51u, 51m, 51b to which the current is supplied are used, and the zero magnetic field region ZMF is formed in the vacuum container U to form a plasma therewith. However, the present invention is not limited thereto, and the magnetic field coil 50 and the power supply units 51u, 51m, and 51b may not be provided, and only the high-frequency power supply 4〇 is supplied with the high-frequency power to the high-frequency helical antenna 3〇 in the vacuum container. Into the plasma. • In the shape of the spiral of the high-frequency helical antenna 30, the shape of the spiral is expanded on a single plane. The shape of the spiral is the so-called spiral shape, but it can also be the shape of the shape of the volume on the spherical surface. (4) The shape of the cow. At this time, the top plate 12 of the vacuum container u is not so-called a flat shape, but may be a so-called circle whose outer surface is hemispherical; the Μ·2P squall antenna 3G is all the same _ shape. ~$ Three high_line antennas 3G, the length of the line can also be different from the number of turns of the 1 Z roll. For example, FIG. 5 shows that after viewing the two-high-frequency helical antenna 3G stack from the direction of ^^:2, the top view is 俯视: Γ: 5: Γ' 36 lines of the line. When the rotation is set to 1 turn, the side of the point of view, in other words, the upper section, 2.5 turns, the number of turns of the side spiral antenna 30 away from one of the viewpoints is 3 turns. By the configuration of the high-frequency helical nemesis of the second lower section, the following effects can be obtained. 32 201143554 (9) In the case where the number of turns of the plurality of high-frequency helical antennas is different, since the plurality of high-frequency helical antennas 30 have different inductances, the plurality of high-frequency antennas 30 have the same Compared with the composition of the inductance, the range of the synthetic inductive reactance can be expanded. Therefore, the matching circuit for synthesizing the inductive reactance can be reconfigured, and the increase in the high-frequency power supplied to the high-frequency helical antenna 3〇 can be more reliably suppressed. • The configuration of the second-frequency still-frequency helical antenna is such that the shape of the outer surface of the top plate 12 is in the direction of the above-mentioned laminated side t DL, in other words, parallel to the second axis A2. The same configuration as the premise. That is, the directions of the wraps of the respective high-frequency helical antennas 30 are the same, and the lines are not arranged to intersect each other as viewed from the direction of the first axis A2. According to this configuration, the spiral-shaped high-frequency helical antenna 3 is turned on, whereby (4) the plate can be turned on in the vacuum container, and the top plate 12 becomes a negative potential. 'When all of the high-frequency helical antennas 3 are arranged in the same direction of the wrap, the interval between the turns of the coils constituting each of the high-profile antennas 3 、 is, for example, between the first and second turns. There is a line, and the area of the top plate 12 corresponding to the position immediately below it is more likely to become a negative potential than the area corresponding to the position immediately below the line. Thereby, the stacking of the above-mentioned deposits in the top plate 12 is affected. In the region of suppression and the difficulty in suppressing the accumulation of the two parts, from the direction of the third reduction A2, the spiral antennas 30 are crossed, that is, the directions of the spirals may be opposite to each other. For example, FIG. 6 and FIG. 7 are top view structures of the two-high-frequency helical antenna 3G stacked as seen from the same as in the previous FIG. 5. As shown in FIG. 6, the number of turns _ two-high-frequency helical antenna 3G It is the direction of its secrets. 33 201143554 This opposite 'constitutes these high-frequency spiral antennas 3 The line of 0 is the configuration of the parent fork when viewed from above. Also, as shown in Fig. 7, the two-high-frequency helical antenna 30 having a different number of turns, more correctly, is close to one side of the viewpoint, that is, the upper portion is high. The number of turns of the frequency helical antenna 30 is 2.5 turns. On the other hand, it is also possible to change from the side of the viewpoint, that is, the two-high-frequency helical antenna 30 having the number of turns of the south-frequency helical antenna 30 of the lower stage of 3.5 turns. The direction of the wrap. In other words, the high-frequency helical antenna 30 of Fig. 7 is arranged such that the directions of the wraps are opposite to each other, and from the above viewpoint, the lines of the high-frequency helical antenna 30 are mutually connected. According to the configuration, the following effects can be obtained. (1) Other high-frequency helical antennas 30 are present in the interval between the circle and the circle of each of the high-frequency helical antennas 30, and are located in the line constituting the high-frequency helical antenna 3〇. The area of the top plate 12 directly below is increased. In other words, with respect to the plasma in the vacuum device 11, the area of the top plate 12 which becomes a negative potential can be made: = the area of the top plate 12 which is hit by positive ions. The expansion causes the suppression of the above-mentioned deposits in the top plate 12 to be uniform. 〆•Setting on the high-frequency helical antenna 3 The thickness of the two input spacers 3 in the turn is equal to each other' and the thickness of the output spacers 34b disposed between the high frequency helical antennas is also equal to each other, and the thickness and thickness of the input spacers are The same is true. However, the input spacers 33b may have different thicknesses in the lamination direction DL, and the output spacers 34b may have different thicknesses in the lamination=direction DL. The input spacer 33b and the output spacer 34b which are inserted into the same high-frequency screw antenna and the third field, for example, the upper-order high-frequency helical antenna 30 and the second-second and the crossed-line antenna 30 which are described in the upper layer DL The input spacer 33b and the output spacer (4) J "single the input spacer between the high-frequency helical antenna 30 of the middle section and the lower-range high-frequency helical antenna 30, and the output spacer, 34 201143554 It is preferable to have the same thickness. According to this configuration, the following effects can be obtained. (11) The spacing between the individual three high-frequency spiral days, the line 3〇 and the inside of the vacuum vessel U can be adjusted over a wider range by the thickness of the spacers. Therefore, the state of the induced magnetic field leaking inside the vacuum vessel U, or even the state of the plasma generated by the induced magnetic field, can be adjusted in a wider range depending on the thickness of the spacer. In other words, the increase in the high frequency power supplied to the high frequency antenna can be more surely suppressed. "11 • Even if the voltage output from the DC power source 44 contains noise, if the plasma generated by the generation region 11a is sufficiently stabilized, the low-pass chopper 45 connected to the DC power source 44 may be omitted. 1. The connection of the DC power source 44 is not limited to the input terminal 33, and may be a position between the input terminal 33 and the output terminal % of the south frequency helical antenna 30, and may be a plurality of portions. However, in a configuration in which a plurality of connections are provided at the connection of the DC power source 44, a plurality of high-frequency helical antennas 3 are provided to be limited to positions where the inductive reactance is lowered. • The DC voltage output from the straight k power source 44 is applied to all of the three-segment three-spiral antennas 30. However, it is also possible to apply one or two of these high-order soul antennas 3G. At this time, in the high-frequency helical antenna 30 to which the DC arm is applied, if the antenna 30' is placed closest to the top plate 12, the negative potential applied to the top plate 12 is increased by the phase of the DC voltage, and the adhesion is suppressed. The particles accumulated on the inner peripheral surface of the top plate 12 also become large. The DC voltage of the high-frequency helical antenna 3 is increased from the direct current power supply 44 to the high-frequency power supply to the high-frequency helical antenna 3G, and the high-frequency power supply is not limited thereto. _ Sexually implemented 35 201143554, the application period of the DC voltage or the period during which the application is stopped can be arbitrarily set. The high-frequency helical antenna 30 mounted on the plasma etching apparatus 10 is not limited to three, and may be in accordance with the conditions of the processing performed by the plasma etching apparatus 10, or more accurately, the high frequency including The transmission path of the high-frequency power source 40 of the helical antenna 30 to the vacuum container 11 and the difference in impedance between the gas in the vacuum container 11 and the like are appropriately changed. Further, when the number of the high-frequency helical antennas 30 is changed, the number of the input spacers 33b and the output spacers 34b provided between the high-frequency helical antennas 30 is also changed. The input terminal 33 and the output terminal 34 are constituted by screw members 33a and 34a and input/output spacers 33b and 34b, in other words, an input coupling portion and an output coupling portion. However, the input terminal 33 and the output terminal 34 may be formed of only the screw members 33a and 34a, respectively. In other words, the input coupling portion and the output coupling portion may be formed only of spacers. In this case, the spacer may be formed integrally with the high-frequency helical antenna 30. In other words, the terminals 33 and 34 may be coupled and disengaged with respect to the input end 31 or the output end 32. • Output terminal 32 may also be other reference potentials than grounded to plasma etching apparatus 10. The end portion of the both ends of the high-frequency helical antenna 30 through which the second axis A2 passes is referred to as the input end portion 31, and the other end portion different from this is referred to as the output end portion 32. However, the end portion through which the second axis A2 passes may be an output end portion connected to the reference potential, and the other end portion different from this may be connected to the input end portion of the high-frequency power source 30. When the input end portion 31 of each of the high-frequency helical antennas 30 is screwed to the conductive screw member 33a, since all the antennas 30 are electrically connected via the screw member 33a, the input spacers 33b may not be electrically conductive. . In the case of the screw end member 3a of the output end portion 3 of each of the (four) helical antennas 3G, the input side capacitors 42 are not necessarily required for each of the output spacers. Also, Round II 43 is not a must. Further, the output side capacitor is not limited to the above-described electro-engraving device i, and the electro-convergence device or the like has the same::= line, and plasma which is induced by the high-frequency power supplied thereto. It is used in other plasma processing apparatuses which perform various processes by the substrate of the object to be processed. [Brief Description of the Drawings] Fig. 1 is a schematic configuration diagram showing a schematic configuration of a slurry etching device according to an embodiment of the plasma processing apparatus of the present invention. Fig. 2 (4) is a view showing the planar structure of the high-frequency helical antenna of the electric (four) engraving device; Fig. 2 (b) is a cross-sectional view showing the structure of the high-line antenna. Fig. 3(a) is an enlarged cross-sectional view showing an enlarged cross-sectional structure of a high-frequency helical antenna; and (3) is an enlarged cross-sectional view showing a partial cross-sectional structure of the high-lying antenna. Fig. 4 is a perspective view showing a three-dimensional structure of a south-frequency helical antenna. Fig. 5 is a plan view showing a planar configuration of a high frequency helical antenna provided in an electro-recending device of another embodiment. Fig. 6 is a plan view showing the planar structure of a high frequency helical antenna which is not provided in the plasma etching apparatus of another embodiment. Fig. 7 is a plan view showing a planar configuration of a high frequency helical antenna provided in a plasma etching apparatus of another embodiment. 37 201143554 [Explanation of main components] 10 Plasma etching apparatus 11 Vacuum vessel 11a Plasma generating area 12 Top plate (top) 13 Substrate mounting table 14 Protective member 15 Gas introduction port 20 High-frequency power supply for bias voltage 21 Matching circuit for bias voltage 30 high-frequency helical antenna (high-frequency antenna) 31 input end 31a, 31b input end through hole 32 output end 32a, 32b output end through hole 33 input terminal 33a, 34a screw member 33b input spacer 33c spacer through hole 33d, 34d nut 34 output terminal 34b output spacer 34c through hole 35 auxiliary spacer 40 frequency power supply 41 matching circuit 38 201143554 42 input side capacitor 43 output side capacitor 44 DC power supply 45 low pass filter, wave device 50 field coil 50u Upper coil 50m Middle coil 50b Lower coil 51b, 51u, 51m Power supply 60 Gas supply A1 First axis A2 Second axis Cl, C2 Center DL Lamination direction La, Lc Distance Lb Thickness L0 Straight line P
Ra、Rb 區域 r 分隔距離 a 距離變化率 Θ 中心角 S 基板 ZMF 零磁場區域 39Ra, Rb region r separation distance a distance change rate Θ center angle S substrate ZMF zero magnetic field region 39