CN110416052A - Wafer support seat with resonant circuit - Google Patents
Wafer support seat with resonant circuit Download PDFInfo
- Publication number
- CN110416052A CN110416052A CN201910671250.0A CN201910671250A CN110416052A CN 110416052 A CN110416052 A CN 110416052A CN 201910671250 A CN201910671250 A CN 201910671250A CN 110416052 A CN110416052 A CN 110416052A
- Authority
- CN
- China
- Prior art keywords
- electrode
- inductance
- wafer support
- support seat
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
The present invention provides a kind of wafer support seat, include: multiple electrodes and multiple resonant circuits are electrically coupled to respective electrode, each resonant circuit is configured to adjust an impedance according at least to a signal of connection electrode, changes the corresponding plasma distribution of the electrode during a processing whereby.
Description
Technical field
The present invention relates to the wafer support seats of manufacture semiconductor structure, are especially adapted for use in the wafer of corona treatment
Support base is commonly equipped with the members of radio circuit.
Background technique
Corona treatment is used in as integrated circuit, light shield, plasma are shown and the manufacture of solar energy science and technology.In
In the manufacture of integrated circuit, wafer is handled by plasma chamber, such as etching, chemical vapor deposition PECVD or physical vapor
Deposit PEPVD.For the more small integrated circuit of size, it seems plasma that the control needs of processing parameter are more accurate
Energy frequency spectrum, energy of plasma radial distribution, plasma density and the radial distribution of the plasma density.Especially plasma
Volume density, which determine the deposition of crystal column surface and rate of etch.And the radial distribution of the plasma density and energy of plasma
Radial distribution more influences the uniformity for depositing and etching.Known semiconductor processing device is provided with a top electrode and once electricity
Pole can generate plasma therebetween.It is well known, however, that configuration be still not readily reachable by these and be accurately controlled, even
Limit the freedom degree of plasma adjustment.
Therefore, it is necessary to develop a kind of semiconductor processing device or radio frequency component, it is possible to provide different radio frequency control plans
Slightly, to meet the freedom degree of technological design.
Summary of the invention
The purpose of the present invention is to provide a kind of wafer support seats, include: a disk body；One first electrode and one second electricity
Pole is embedded in the disk body, and wherein the first electrode is located at an inside diameter ranges of the disk body, which is located relative to the disk
One external diametrical extent of the inside diameter ranges of body；And one first resonant circuit and one second resonant circuit, be electrically coupled to respectively this
One electrode and the second electrode, wherein first resonant circuit is configured to the signal adjustment one the according at least to the first electrode
One impedance, second resonant circuit are configured to adjust one second impedance according at least to a signal of the second electrode.
In one embodiment, which has a wafer carrying face, between the first electrode and the wafer carrying face
A distance be less than a distance between the second electrode and the wafer carrying face.
In one embodiment, which has ten electrodes, includes the first electrode and the second electrode.
In one embodiment, wafer support seat further includes power supply supply, is electrically coupled to the first electrode and matches
It is set to for the signal applied to Electrostatic Absorption to the first electrode.
In one embodiment, wafer support seat further includes a radio frequency-blocking circuit, is electrically connected at the first electrode
Between power supply supply, and it is configured to that RF signal related with the first electrode is inhibited to be transferred to power supply supply.
In one embodiment, which includes a variable capacitance, one first inductance and one second inductance,
Wherein upstream end electric property coupling first electrode of the variable capacitance, a downstream of the variable capacitance be electrically connected this first
One upstream end of inductance, second inductance and the concatenated variable capacitance and first inductance in parallel.
In one embodiment, which includes a variable capacitance, one first inductance and one second inductance,
Wherein upstream end electric property coupling first electrode of the variable capacitance, a downstream of the variable capacitance be electrically connected this first
One upstream end of inductance, second inductance and the concatenated variable capacitance and first inductance in parallel.
In one embodiment, the variable capacitance arrangement is at according to the signal for inputting the first electrode or the second electrode
Adjustment, to change first impedance or second impedance.
In one embodiment, which includes a first capacitor, one second capacitor and an inductance, this
Upstream end electric property coupling first electrode of one capacitor, a downstream of the first capacitor is electrically connected the one of second capacitor
One downstream of upstream end, the first capacitor is electrically connected a upstream end of the inductance.
Another object of the present invention is to provide a kind of semiconductor processing device, for the radio frequency processing of semiconductors manufacture,
Device includes: a cavity；One spray assemblies at the top of the one of the cavity and have an electrode；One r-f generator and one
Orchestration is electrically coupled to the spray assemblies；And the wafer support seat, positioned at the lower section of the spray assemblies.
In in specification of the invention below and by schema illustrated by the principle of the invention, this will be presented in more detail
These and other characteristics and advantage of invention.
Detailed description of the invention
Referring to following schema and explanation, it can be even further appreciated that the present invention.It is non-limiting to be referred to nonexhaustive example
Following schema and describe.Component in the drawings is not necessarily actual size；Focus on illustrating structure and principle.
Fig. 1 shows wafer support seat of the present invention and its circuit connection diagram.
Fig. 2 illustrates an electrode arrangement of wafer support seat of the present invention.
[symbol description]
10 semiconductor processing device, 200 first resonant circuit
100 wafer support seat 200a variable capacitances
101 the first inductance of cavity 200b
102 the second inductance of spray assemblies 200c
The supply of 103 r-f generator, 201 power supply
104 adaptation, 202 second resonant circuit
105 first electrode 202a variable capacitances
106 the first inductance of second electrode 202b
107 the second inductance of outer heating device 202c
108 internal heater, 203 capacitor
204 radio frequency-blocking circuit of W wafer
205 controller of S1 signal
206 low-pass filter of S2 signal
S3 opens and closes 207 radio frequency earthed circuit of signal
401 first electrode, 208 AC signal generator
402 second electrode, 209 solid-state relay
403 third electrodes
Specific embodiment
It is beneath to show particular example specific embodiment with reference to the schema more complete description present invention, and by illustrating.No
It crosses, this claimed subject matter can be embodied within many different forms, therefore cover or apply for that the construction of claimed subject matter is not limited
In any exemplary embodiment disclosed in the present specification；Exemplary embodiment is only to illustrate.Equally, the invention reside in mention
The claimed subject matter applied or covered is given for rationally broad scope.In addition to this, such as claimed subject matter can the side of being embodied as
Method, device or system.Therefore, such as hardware, software, firmware or any combination of these can be used (known simultaneously in specific embodiment
Non-software) form.
The vocabulary " in an embodiment " used in this specification is not necessarily referring to identical specific embodiment, and this specification
" in other (some/certain) embodiments " inside used is not necessarily referring to different specific embodiments.Its object is to for example
The theme of opinion includes the combination of all or part of exemplary embodiment.
100 schematic diagram of wafer support seat of the present invention that Fig. 1 shows semiconductor processing unit 10 and is contained therein.Especially
Ground, the semiconductor processing device 10 is the radio frequency handling device for manufacturing semiconductor, with radio frequency component.The radio frequency
Component contain the 101 top spray component 102 of a cavity positioned at semiconductor processing device 10 a top electrode (not shown) and
Multiple lower electrodes of wafer support seat 100 and the combination of r-f generator 103 and adaptation 104.Wherein, r-f generator
103 and adaptation 104 be electrically coupled to the top electrodes of spray assemblies 102, to provide RF signal.The lower electrode is then via each
Other circuit downstream ground connection, circuit details explanation is as after.In other possible embodiments, the downstream of the electrode can volume
Other places is electrically connected to other feed circuit, be configured to feed back to the RF signal of lower electrode r-f generator 103 or
Adaptation 104, to meet the adjustment of various RF signals.
Although not specific each details, it is however generally that, typical cavity 101 has a chamber, by a top, a bottom
And one wall portion defined.Top usually has complicated inlet manifold, gas distribution gas, gas passage and spray head.In typical case
Configuration in, top electrode be included in spray head structure in.The top of cavity 101 or spray head are electrically coupled to r-f generator
103 and adaptation 104 make top electrode receive the signal from radio frequency source.
Wafer support seat 100 of the present invention is typically connect with the bottom of cavity 101, makes a wafer W that can be supported on chamber
In one height.One heating region can be formed on the spray assemblies 102 comprising top electrode and the wafer comprising lower electrode
Between support base 100.
Although not showing, in one embodiment, r-f generator 103 may include a low frequency radio frequency source, a radio frequency source
Or both combination, and the adaptation in adaptation 104 may include the dedicated matching network of low frequency, the dedicated matching network of high frequency
Or both combination.The matching network includes one or more capacitors, inductor and some electronic building bricks, is formed in detail not
It repeats herein.According to different disposal, select low frequency or high-frequency radio frequency operation be it is known, also do not repeat herein.In known hand
Duan Zhong, r-f generator 103 and/or adaptation 104 are configured to adjust institute accordingly according to certain feedback signals related with radio frequency
State the variable component in the output frequency and/or the matching network of low frequency or high-frequency radio frequency source, such as variable capacitance.
Such as known configuration, wafer support seat 100 of the present invention also has a disk body unlabeled, has and faces spray
One wafer carrying face of component 102, for carrying and a wafer W to be processed being exposed in the processing region of cavity.The present invention
Disk body has a plurality of lower electrodes, for receiving the RF signal from upstream.In one embodiment, the lower electrode includes one
First electrode 105 and a second electrode 106.As shown in Figure 1, the position of first electrode 105 is slightly above the position of second electrode 106
It sets.This means, the distance between first electrode 105 and wafer carrying face be less than between second electrode 106 and wafer carrying face away from
From.
In addition, first electrode 105 is located at an inside diameter ranges of disk body, and second electrode 106 is located opposite from the one of disk body
External diametrical extent.In one embodiment, first electrode 105 can be configured to the electrode with a round area, and second electrode 106 can match
It is set to the electrode with a ring-like area.Accordingly, the center portion of at least covering wafer of first electrode 105 (W), and second electrode
The peripheral part of (W) of 106 covering wafers.First electrode 105 may be additionally configured to inhale as electrostatic in addition to received RF signal
Adnexa is wafer (W) to be positioned on loading end.In one embodiment, the internal diameter of ring-like second electrode 106 is greater than wafer
(W) outer diameter.
Disk body also can include one or more of heater, comprising the internal heater 107 for wafer center part and be directed to
One outer heating device 108 of wafer periphery.Internal heater 107 and outer heating device 108 cooperate according to a controller, to realize bullet
Property disk temperature control.
First electrode 105 and second electrode 106 are via the respective electric property coupling of the metal bar or cable being contained in support base
To the circuit of ground terminal.As shown in Figure 1, first electrode 105 is electrically at least coupled to one first resonant circuit 200 and for described
The power supply supply 201 of Electrostatic Absorption, second electrode 106 is then electrically coupled to one second resonant circuit 202.In other embodiments
In, the second resonant circuit 202 can be omitted, and second electrode 106 is directly grounded and becomes grounding electrode.
First resonant circuit 200 and the second resonant circuit 202 are each configured to basis from first electrode 105 and second electrode
106 received signals change one first impedances and one second impedance, adjust whereby near the wafer carrying face it is equal from
Daughter potassium ion distribution.In one embodiment, the first resonant circuit 200 is via 203 electric property coupling first electrode 105 of a capacitor.The
One resonant circuit 200 may include an at least variable electronic component.For example, in one embodiment, the first resonant circuit 200 has one
Variable capacitance 200a, one first inductance 200b and one second inductance 200c.A upstream end of variable capacitance 200a is electrically connected to
Capacitor 203, a downstream of variable capacitance 200a are electrically connected to a upstream end of the first inductance 200b.Therefore, variable capacitance
200a and the first inductance 200b is to be connected in series.Second inductance 200c and concatenated variable capacitance 200a and the first inductance 200b are simultaneously
Connection connection, and the downstream end ground connection of the first inductance 200b and the second inductance 200c.Variable capacitance 200a is configured to according to first
The received signal S1 of resonant circuit 200, changes the impedance of the first resonant circuit 200 whereby, to adjust 105 institute of first electrode
Corresponding plasma potassium ion distribution, i.e., close to the region of wafer center.The signal S1 and the received radio frequency of first electrode 105
Power is related.
Claims (11)
1. a kind of wafer support seat, characterized by comprising:
One disk body；
One first electrode and a second electrode, are embedded in the disk body, and wherein the first electrode is located at an inside diameter ranges of the disk body,
The second electrode is located relative to an external diametrical extent of the inside diameter ranges of the disk body；And
One first resonant circuit and one second resonant circuit, are electrically coupled to the first electrode and the second electrode respectively, wherein
First resonant circuit is configured to adjust one first impedance according at least to a signal of the first electrode, which matches
The signal being set to according at least to the second electrode adjusts one second impedance.
2. wafer support seat as described in claim 1, which is characterized in that wherein the disk body has a wafer carrying face, this
A distance between one electrode and the wafer carrying face is less than the distance between the second electrode and the wafer carrying face.
3. wafer support seat as described in claim 1, which is characterized in that wherein the disk body has ten electrodes, comprising this
One electrode and the second electrode.
4. wafer support seat as described in claim 1, which is characterized in that further include power supply supply, be electrically coupled to this
One electrode is simultaneously configured for a signal applied to Electrostatic Absorption to the first electrode.
5. wafer support seat as claimed in claim 4, which is characterized in that further include a radio frequency-blocking circuit, be electrically connected at
Between the first electrode and power supply supply, and it is configured to that RF signal related with the first electrode is inhibited to be transferred to the power supply
Supply.
6. wafer support seat as described in claim 1, which is characterized in that wherein first resonant circuit can power transformation comprising one
Hold, one first inductance and one second inductance, wherein upstream end electric property coupling first electrode of the variable capacitance, this can power transformation
The downstream held be electrically connected a upstream end of first inductance, second inductance and the concatenated variable capacitance and this first
Inductance in parallel.
7. wafer support seat as described in claim 1, which is characterized in that wherein second resonant circuit can power transformation comprising one
Hold, one first inductance and one second inductance, wherein upstream end electric property coupling first electrode of the variable capacitance, this can power transformation
The downstream held be electrically connected a upstream end of first inductance, second inductance and the concatenated variable capacitance and this first
Inductance in parallel.
8. wafer support seat as claimed in claim 7 or 8, which is characterized in that wherein the variable capacitance arrangement is at according to input
The signal of the first electrode or second electrode adjustment, to change first impedance or second impedance.
9. wafer support seat as claimed in claim 5, which is characterized in that wherein the radio frequency-blocking circuit includes one first electricity
Hold, one second capacitor and an inductance, upstream end electric property coupling first electrode of the first capacitor, the first capacitor is once
Trip end is electrically connected a upstream end of second capacitor, and a downstream of the first capacitor is electrically connected a upstream of the inductance
End.
10. wafer support seat as described in claim 1, which is characterized in that wherein the second electrode is a ring-shaped electrode, this
One internal diameter of two electrodes is greater than an outer diameter of wafer.
11. a kind of semiconductor processing device, for semiconductors manufacture radio frequency processing, characterized by comprising:
One cavity；
One spray assemblies at the top of the one of the cavity and have an electrode；
One r-f generator and an adaptation, are electrically coupled to the spray assemblies；And wafer support as described in claim 1
Seat, positioned at the lower section of the spray assemblies.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910671250.0A CN110416052B (en) | 2019-07-24 | 2019-07-24 | Wafer support with resonant circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910671250.0A CN110416052B (en) | 2019-07-24 | 2019-07-24 | Wafer support with resonant circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110416052A true CN110416052A (en) | 2019-11-05 |
| CN110416052B CN110416052B (en) | 2022-06-17 |
Family
ID=68362854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910671250.0A Active CN110416052B (en) | 2019-07-24 | 2019-07-24 | Wafer support with resonant circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110416052B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4885074A (en) * | 1987-02-24 | 1989-12-05 | International Business Machines Corporation | Plasma reactor having segmented electrodes |
| US20060254717A1 (en) * | 2005-05-11 | 2006-11-16 | Hiroyuki Kobayashi | Plasma processing apparatus |
| CN101090259A (en) * | 2006-06-13 | 2007-12-19 | 应用材料股份有限公司 | High AC current high RF power ac-rf decoupling filter for plasma reactor heated electrostatic chuck |
| CN103026800A (en) * | 2010-07-30 | 2013-04-03 | 株式会社普来马特 | Rf power distribution device and rf power distribution method |
| CN104040679A (en) * | 2011-03-28 | 2014-09-10 | 东京毅力科创株式会社 | Adaptive recipe selector |
| CN104685608A (en) * | 2012-09-26 | 2015-06-03 | 应用材料公司 | Bottom and side plasma tuning having closed loop control |
| CN108630511A (en) * | 2017-03-17 | 2018-10-09 | 北京北方华创微电子装备有限公司 | Lower electrode device and semiconductor processing equipment |
-
2019
- 2019-07-24 CN CN201910671250.0A patent/CN110416052B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4885074A (en) * | 1987-02-24 | 1989-12-05 | International Business Machines Corporation | Plasma reactor having segmented electrodes |
| US20060254717A1 (en) * | 2005-05-11 | 2006-11-16 | Hiroyuki Kobayashi | Plasma processing apparatus |
| CN101090259A (en) * | 2006-06-13 | 2007-12-19 | 应用材料股份有限公司 | High AC current high RF power ac-rf decoupling filter for plasma reactor heated electrostatic chuck |
| CN103026800A (en) * | 2010-07-30 | 2013-04-03 | 株式会社普来马特 | Rf power distribution device and rf power distribution method |
| CN104040679A (en) * | 2011-03-28 | 2014-09-10 | 东京毅力科创株式会社 | Adaptive recipe selector |
| CN104685608A (en) * | 2012-09-26 | 2015-06-03 | 应用材料公司 | Bottom and side plasma tuning having closed loop control |
| CN108630511A (en) * | 2017-03-17 | 2018-10-09 | 北京北方华创微电子装备有限公司 | Lower electrode device and semiconductor processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110416052B (en) | 2022-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11908664B2 (en) | Plasma processing apparatus | |
| TWI768395B (en) | Plasma processing apparatus and plasma processing method | |
| TWI327752B (en) | A plasma processing chamber for generating plasma | |
| US10354838B1 (en) | RF antenna producing a uniform near-field Poynting vector | |
| KR102070471B1 (en) | Plasma processing device and filter unit | |
| CN107086169A (en) | The pedestal of the room component of plasma source and the lifter pin for having mobile substrate C-shaped ring | |
| KR101062461B1 (en) | Antenna of inductively coupled plasma generator and inductively coupled plasma generator comprising same | |
| US10032608B2 (en) | Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground | |
| CN108028163A (en) | Remote plasma and electron beam generating systems for plasma reactor | |
| KR20210149894A (en) | Dual Frequency, Direct Driven Inductively Coupled Plasma Source | |
| US11282679B2 (en) | Plasma control apparatus and plasma processing system including the same | |
| CN114521276A (en) | rF distribution circuit including transformer and/or transformer coupling combiner | |
| CN108257840B (en) | Plasma processing device | |
| KR101986744B1 (en) | Plasma processing apparatus and method | |
| KR100852412B1 (en) | Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semiconductor wafer processing chamber | |
| TW200409567A (en) | Simultaneous discharging apparatus | |
| CN110416052A (en) | Wafer support seat with resonant circuit | |
| CN110379701A (en) | Wafer support seat with tunable radio frequency component | |
| JP4216054B2 (en) | Plasma processing apparatus and operation method thereof | |
| US20230071933A1 (en) | Planar multi-layer radio frequency filters including stacked coils with structural capacitance | |
| US20230059495A1 (en) | Optimization of Radiofrequency Signal Ground Return in Plasma Processing System | |
| CN114761616A (en) | Substrate support with integrated RF filter | |
| CN115298799A (en) | RF reference measurement circuit for a direct drive system supplying power to generate plasma in a substrate processing system | |
| KR101914902B1 (en) | Apparatus for generating plasma and apparatus for treating substrate having the same | |
| KR101594935B1 (en) | Apparatus for treating substrate and method for providing power |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Applicant after: Tuojing Technology Co.,Ltd. Address before: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Applicant before: PIOTECH Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |