201143176 六、發明說明： 【發明所屬之技術領域】 本發明係有關一種熱輻射散熱發光二極體(LED)結構，尤其 是具有熱輻射散熱薄膜藉熱輻射以加強散熱的效率。 【先前技術】 近年來’隨著環保、節能及減碳的世界風潮之逐漸盛行，led 因具有高發光效率而成為取代一般發光源的最重要選項之一。 參閱第一圖’習用技術發光二極體結構的示意圖。如第一圖 所示，習用技術的LmD結構1 一般包括LED晶片10、藍寶石基 板20、銀膠30、支架40、底座基板50、複數個連接線60、封裝 膠70及散熱鋁基板80。LED晶片10在藍寶石基板2〇上形成，利 用銀膠30將包含LED晶片10的藍寶石基板2〇連結至支架4〇上， 底座基板50承載支架40，且 該等連接線60係用以連接LED晶片1〇至支架40。支架40 具延伸體結構，用以貫穿底座基板50而與底座基板50底下的散 熱鋁基板80接觸，藉以將LED晶片10所產生的熱量以熱傳導方 式傳播至散熱紹基板80，如熱傳導方向η所示。 由於熱傳導效率係取決於材料的熱導係數以及傳導面積，而 習用技術中，為增加熱傳導的面積，必須加大LEd結構1的尺寸， 造成使用上受到限制。此外，散熱鋁基板8〇的表面積亦決定整體 的散熱效率，所以散熱鋁基板80 一般具有很大的幾何外觀，增加 整體LED結構1的重量’進而使得lED結構1非常笨重。 因此’需要一種不需支架及散熱鋁基板且能高效率熱輻射散 熱的發光二極體結構，以解決上述習用技術的問題。 201143176 【發明内容】 本發明之主要目的在提供—雜輻射賴發光三極體結構， 包括LED蟲晶層 '藍寶石(Sapphire)基板、點著導熱層、熱輻射散 熱薄膜及底錄板’其巾LED"b層在難^基板上形成，熱韓 射散熱細係在基板上形成，黏著導熱層位於藍寶石基板與熱輕 射散熱細之間，用以將包含LED蟲晶層的藍寶石基板及包含熱 幸田射政熱溥膜的底座基板結合成一體的熱輻射散熱發光二極體結 構。 熱輻射散熱薄膜包含金屬與非金屬的組合物，並具有結晶體 的顯微結構，其中結晶體的大小為數微米至數奈米之間，尤其是， 熱輻射散熱薄膜具有高效率的熱輻射散熱特性，可將LED磊晶層 所產生的熱ϊ以熱輻射方式快速的朝向底座基板而向外傳播，因 此，旎大幅降低LED磊晶層的操作溫度，維持穩定的發光操作並 延長使用壽限，或增加LED磊晶層的導通電流以增加發光亮度。 同時，本發明的熱輻射散熱發光二極體結構不需支架及散熱鋁基 板，進一步降低材料及製作成本，並縮小整體的體積及重量，進 而增加應用範圍及使用方便性。 本發明之另一目的在提供一種熱輻射散熱發光二極體結構的 製作方法，包括在藍寶石基板上形成LED磊晶層；在底座基板上 形成熱輻射散熱薄膜；以及利用黏著導熱層結合將包含LED磊晶 層的藍寶石基板及包含熱輻射散熱薄膜的底座基板，以形成一體 的熱輻射散熱發光二極體結構。 【實施方式】 以下配合圖式及元件符號對本發明之實施方式做更詳細的說 明’俾使熟習該項技藝者在研讀本說明書後能據以實施。 參閱第一圖，本發明熱輻射散熱發光二極體結構的示意圖。 201143176 如第一圖所示’本發明的熱輻射散熱發光二極體結構1〇〇包括LED 蟲晶層110、藍寶石基板120、黏著導熱層130、熱輻射散熱薄膜 140、底座基板150、至少一電氣連接線(圖中未顯示)及封裝膠體(圖 中未顯示）。LED遙晶層110 —般至少可包括依序堆疊的N型半導 體層、半導體發光層、P型半導體層，比如]^型半導體層可為N 型GaN(氮化鎵)層，半導體發光層可包含氮化鎵或氮化銦鎵，p型 半導體層可為P型GaN層，其中P型GaN層及N型GaN層分別 錯電氣連接線而電氣連接至外部電源(圖中未顯示)的正電端及負 電端，藉以導通LED磊晶層11〇，亦即順向偏壓，而使得半導體 發光層產生電子電洞對的復合作用以發射光線。 封裝膠體可為矽膠或環氧樹脂，係用以包覆LED磊晶層11〇 以提供包護作用，同時可在封裝膠體中摻雜適當的螢光粉，用以 將LED磊晶層no所發射的原始光譜與螢光粉機發光進行混光， 比如將藍光混色成不同色溫的白光。 黏著導熱層130係位於藍寶石基板12〇及熱輻射散熱薄臈13〇 之間，且具較佳熱傳導特性’可將經由藍寶石基板12〇傳導LED 遙晶層110所產生的熱’進一步傳導至熱輕射散熱薄膜14〇，亦即 LED蟲晶層110所產生的熱係以熱傳導的機制經藍f石基板12〇 及銀膠130而逐層傳導至熱輻射散熱薄膜14〇，其中黏著導熱層 13〇係用以黏著的銀膠或錫膠，或是用以共金的銅錫合金或金錫合 金0 由於熱輪射散熱薄膜U0是在底座基板ls〇上形纟，因此與 底座基板⑼接觸的交接面具有高解熱輻射躲，可將本身的 熱量以熱輻射的機制朝向底座基板15G_，如圖中的熱輕射r 所示。 熱輻射散熱薄膜140主要是包含金屬與非金屬的組合物，且 201143176 該組合物包含銀、銅、錫、銘、鈦、鐵及録的至少其中之一，以 及包3爛、碳的至少其中之一的氧化物或氮化物或無機酸機化 物，例如’熱姉散熱薄膜140可包括鈦錄齒化物。此外，熱輻 射散熱薄膜140具有結晶體的顯微結構，其中結晶體的大小可為 紐米至數奈米之間，據信，該結晶體可產生特定的晶體振盈， 藉以輕射出驢率的熱輻射光譜’比如紅外線或遠紅外線範圍的 光譜。 為提高難射散熱_ M0的品質，可_具適#材料的底 • 座基板15°，比如熱輻射散熱薄膜14〇與底座基S 150 _膨脹係 數之差額比不大於0.1〇/〇。 上述的熱輻射散熱發光二極體結構100中可直 ⑼當作散減置，而《使關外蚊缺散熱裝^座降^ 料成本，尤其是省略笨重且占相當大體_散難置，比如散熱 銘基板。散熱銘基板的溫度更可因熱輕射散熱薄膜M0的熱輕射 傳播機制而高於LED磊晶層i 10的溫度。因此，本發明可加強:ED 磊晶層的散熱效率，簡化整體LED結構的設計複雜 _ 辦，帆綱細細積，_=== 大應用範圍。 此外’可進-步使料型的散齡置(圖巾未顯示)連結至底座 基板150，以更加增強散熱能力，而由於熱輻射散熱薄膜⑽可將 熱量以熱輻樹方式傳播至該散熱裝置上，使得散熱裝置的曰产可 大於當餘要發熱源之LED"日層11G的溫度，目 熱傳導之散熱機制完全不同的散熱效果。依據實際量測，在'led 磊晶層110的溫度為115°c時，散熱裝置的溫度可高達125。〇 參閱第三圖，依據本發明熱輻射散熱發光二極"體結才^製作 方法的處理流程圖。如第三圖所示’本發明的製作方去化序 201143176 步驟S10至步驟S50 ’其中首先由步驟s J〇開始，在藍寶石基板上 形成哪|晶層，接著進人步驟S2()，在底座基板上形成熱輕射 散熱薄膜’可使用包含液體、金屬及非金屬化合物的組合物塗佈 在經加熱的底座基板上’藉簡㈣揮娜，並使金屬及非金屬 化&物在加熱下开》成具結晶體構造的熱輻射散熱薄膜。 步驟S2G中所使用的液體可躲、醇類及酮類的至少其中之 - ’而所包含的金屬及非金屬化合物可為如上述第二圖之實施例 所說明，且底座基板的材料亦如第二圖之實施例所述，因此不再 贅述。 然後進入步驟S30 ’利用黏著導熱層結合藍寶石基板及熱輻 射散熱_，使包含LED i晶層的贿石基板及包含熱韓射散熱 薄膜的底座基板結合成一體的熱輻射散熱發光二極體結構。接著 在步驟S40中’糊電氣連接線以電氣連接蟲晶層至外部電 源的正電端及負電端。最後在步驟S5〇中，利用封裝膠體包覆led 蟲晶層，封裝耀·體的作用如第二圖之實施例所述。 上述的製作方法可進一步包括使用散熱裝置連結至底座基 板，藉以更加增強散熱能力，如第二圖之實施例所述。 參閱第四圖，依據本發明另一實施例熱輻射散熱發光二極體 結構的示意圖。如第四圖所示，本發明的熱輻射散熱LED結構1〇2 包括LED遙晶層11〇、藍寶石基板12〇、第一熱輕射散熱薄膜“I、 黏著導熱層130、奈米釉層160、第二熱輻射散熱薄膜142、底座 基板150、至少一電氣連接線(圖中未顯示)及封裝膠體(圖中未顯 示）’其中LED遙晶層110在藍寶石基板120的上部表面上形成， 第一熱輻射散熱薄膜1410在藍寶石基板120的下部表面上形成， 第二熱輻射散熱薄膜142在底座基板150上形成，而奈米釉層16〇 係在第一熱輕射散熱薄膜142上形成’黏著導熱層13〇係用以連 201143176 結第一熱輻射散熱薄膜141及奈米釉層160,以形成一體的熱輻射 散熱LED結構102。 第一熱輻射散熱薄膜141及第二熱輻射散熱薄膜142的特性 如同上述第二圖的實施例的熱輻射散熱薄膜140，且LED磊晶層 110、藍寶石基板120、黏著導熱層130、底座基板150、至少一電 氣連接線及封裝膠體亦如上述第二圖的實施例所說明。第一熱輻 射散熱薄膜41與藍寶石基板120的熱膨脹係數之差額比不大於 0.1%，且第二熱輻射散熱薄膜142與底座基板150的熱膨脹係數 之差額比不大於0.1%。 奈米釉層16 0係由奈米顆粒經高溫燒結而形成具有奈米化的 表面’比如奈米釉層160的表面粗糙度Ra可為10至2000。上述 的奈米顆粒可由氧化鋁構成。 本實施例的特點在於，LED磊晶層110所產生的熱量可由第 一熱輻射散熱薄膜141以熱輻射方式傳播至黏著導熱層13〇及奈 米釉層160’在由第二熱輻射散熱薄膜142將經奈米釉層16〇傳播 過來的熱量以熱輻射方式朝底座基板150向外傳播，因此可進步 k升整體結構的散熱效率。 以上所述者僅為用以解釋本發明之較佳實施例，並非企圖據以對 本發明做任何形式上之限制，是以，凡有在相同之發明精神下所作有 關本發明之任何修飾或變更，皆仍應包括在本發明意圖保護之範疇。 【圖式簡單說明】 第一圖為習用技術發光二極體結構的示意圖。 第二圖為依據本發明熱輻射散熱發光二極體結構的示意圖。 第二圖為依據本發贿輻射散熱發光二極構之製作方法的處理流 程圖。 201143176 第四圖為依據本發明另一實施例熱輻射散熱發光二極體結構的示意圖。 【主要元件符號說明】 1 LED結構 10 LED磊晶層 20藍寶石基板 30銀膠 40支架 50底座基板 60連接線 70封裝膠 80散熱鋁基板 100熱輻射散熱LED結構 102熱輻射散熱LED結構 110 LED磊晶層 120藍寶石基板 130黏著導熱層 140熱輻射散熱薄膜 141第一熱輻射散熱薄膜 142第二熱輻射散熱薄膜 150底座基板 160奈米釉層 Η熱傳導方向 R熱輻射 S10在藍寶石基板上形成LED磊晶層 S20在底座基板上形成熱輻射散熱薄膜 201143176 S30利用黏著導熱層結合藍寶石基板及熱輻射散熱薄膜 S40利用電氣連接線以電氣連接LED磊晶層至外部電源 S50利用封裝膠體包覆LED磊晶層201143176 VI. Description of the Invention: [Technical Field] The present invention relates to a heat radiation heat-dissipating light-emitting diode (LED) structure, in particular, a heat-radiating heat-dissipating film that utilizes heat radiation to enhance heat dissipation. [Prior Art] In recent years, with the gradual prevalence of environmental protection, energy conservation and carbon reduction, LED has become one of the most important options to replace the general illumination source due to its high luminous efficiency. Referring to the first figure, a schematic diagram of a conventional light-emitting diode structure. As shown in the first figure, the conventional LmD structure 1 generally includes an LED chip 10, a sapphire substrate 20, a silver paste 30, a support 40, a base substrate 50, a plurality of connecting wires 60, an encapsulant 70, and a heat dissipating aluminum substrate 80. The LED chip 10 is formed on the sapphire substrate 2, and the sapphire substrate 2 including the LED chip 10 is bonded to the holder 4 by the silver paste 30. The base substrate 50 carries the holder 40, and the connecting lines 60 are used to connect the LEDs. The wafer 1 is folded to the holder 40. The bracket 40 has an extension structure for contacting the heat dissipation aluminum substrate 80 under the base substrate 50 through the base substrate 50, so as to thermally transfer the heat generated by the LED wafer 10 to the heat dissipation substrate 80, such as the heat conduction direction η. Show. Since the heat transfer efficiency depends on the thermal conductivity and the conduction area of the material, in the conventional technique, in order to increase the area of heat conduction, the size of the LEd structure 1 must be increased, resulting in limitation in use. In addition, the surface area of the heat-dissipating aluminum substrate 8 亦 also determines the overall heat dissipation efficiency, so the heat-dissipating aluminum substrate 80 generally has a large geometric appearance, increasing the weight of the overall LED structure 1 and making the lED structure 1 very bulky. Therefore, there is a need for a light-emitting diode structure which does not require a bracket and a heat-dissipating aluminum substrate and which can radiate heat with high efficiency to solve the above-mentioned problems of the prior art. 201143176 SUMMARY OF THE INVENTION The main object of the present invention is to provide a structure of a hetero-radiation-emitting triode, including a LED sapphire substrate, a sapphire substrate, a thermal conductive layer, a heat radiation film, and an underlying substrate. The LED layer is formed on the substrate, and the thermal heat radiation layer is formed on the substrate. The adhesion heat conduction layer is located between the sapphire substrate and the thermal light-emitting heat sink to cover the sapphire substrate containing the LED insect layer and The base substrate of the hot Kosoda Shooting Thermal Film combines into a heat radiating heat-emitting diode structure. The heat radiation heat dissipation film comprises a combination of a metal and a nonmetal, and has a microstructure of a crystal, wherein the size of the crystal is between several micrometers and several nanometers, and in particular, the heat radiation heat dissipation film has high efficiency heat radiation heat dissipation property. The enthalpy generated by the LED epitaxial layer can be rapidly radiated toward the base substrate by heat radiation, thereby greatly reducing the operating temperature of the LED epitaxial layer, maintaining a stable illuminating operation and prolonging the service life, or The conduction current of the LED epitaxial layer is increased to increase the luminance of the light. At the same time, the heat radiation heat-emitting diode structure of the present invention does not require a bracket and a heat-dissipating aluminum substrate, thereby further reducing the material and manufacturing cost, and reducing the overall volume and weight, thereby increasing the application range and ease of use. Another object of the present invention is to provide a method for fabricating a heat radiation heat emitting diode structure, comprising: forming an LED epitaxial layer on a sapphire substrate; forming a heat radiation heat dissipation film on the base substrate; and combining by using an adhesive heat conductive layer The sapphire substrate of the LED epitaxial layer and the base substrate including the heat radiation heat dissipation film form an integrated heat radiation heat dissipation diode structure. [Embodiment] The embodiments of the present invention will be described in more detail below with reference to the drawings and the reference numerals. Referring to the first figure, a schematic diagram of the structure of the heat radiation heat emitting diode of the present invention. 201143176 As shown in the first figure, the heat radiation heat emitting diode structure 1 of the present invention includes an LED chip layer 110, a sapphire substrate 120, an adhesive heat conductive layer 130, a heat radiation heat dissipation film 140, a base substrate 150, and at least one Electrical connection cable (not shown) and encapsulant (not shown). The LED crystal layer 110 can generally include at least an N-type semiconductor layer, a semiconductor light-emitting layer, and a P-type semiconductor layer which are sequentially stacked. For example, the semiconductor layer can be an N-type GaN (gallium nitride) layer, and the semiconductor light-emitting layer can be Including gallium nitride or indium gallium nitride, the p-type semiconductor layer may be a P-type GaN layer, wherein the P-type GaN layer and the N-type GaN layer are respectively electrically connected to the external power source (not shown) The electrical terminal and the negative terminal are used to turn on the LED epitaxial layer 11 〇, that is, forward bias, so that the semiconductor light-emitting layer generates a composite action of electron hole pairs to emit light. The encapsulant may be a silicone or epoxy resin, which is used to coat the LED epitaxial layer 11 to provide a protective effect, and may be doped with an appropriate phosphor powder in the encapsulant for the LED epitaxial layer no. The original spectrum of the emission is mixed with the illuminating machine, for example, white light is mixed into white light of different color temperatures. The adhesive thermal conductive layer 130 is located between the sapphire substrate 12 and the heat radiating heat dissipation thin layer 13 ,, and has a better heat conduction characteristic 'to further transfer heat generated by the sapphire substrate 12 〇 conducting the LED remote layer 110 to heat The heat radiation film 14 〇, that is, the heat generated by the LED worm layer 110 is thermally conducted by a blue f stone substrate 12 银 and silver paste 130 to the heat radiation heat dissipation film 14 〇, wherein the heat conductive layer is adhered. 13〇 is used to adhere silver or tin glue, or copper-tin alloy or gold-tin alloy used for co-gold. Since the heat-dissipating heat-dissipating film U0 is shaped on the base substrate ls, it is combined with the base substrate (9). The contact interface of the contact has high anti-heat radiation hiding, and the heat of the self can be directed toward the base substrate 15G_ by the mechanism of heat radiation, as shown by the heat light r in the figure. The heat radiation heat dissipation film 140 is mainly composed of a combination of metal and nonmetal, and 201143176, the composition comprises at least one of silver, copper, tin, inscription, titanium, iron and recorded, and at least one of the package 3 and carbon. One of the oxide or nitride or inorganic acid compounds, such as the 'hot heat sink film 140', may include a titanium recording compound. In addition, the heat radiation heat dissipation film 140 has a microstructure of a crystal, wherein the size of the crystal body may be between MN and several nanometers, and it is believed that the crystal body can generate a specific crystal vibration, thereby lightly radiating heat radiation. Spectral 'such as the spectrum of the infrared or far infrared range. In order to improve the quality of the difficult heat radiation _ M0, the bottom of the material can be 15°. For example, the difference between the heat radiation film 14〇 and the base S 150 _ expansion coefficient is not more than 0.1〇/〇. The above-mentioned heat radiation heat-dissipating diode structure 100 can be directly (9) as a decrementing device, and the cost of reducing the heat of the mosquito-removing device can be reduced, especially if it is cumbersome and occupies a large amount. Heat dissipation board. The temperature of the heat-dissipating substrate can be higher than the temperature of the LED epitaxial layer i 10 due to the thermal light-emission propagation mechanism of the thermal light-emitting heat-dissipating film M0. Therefore, the present invention can enhance the heat dissipation efficiency of the ED epitaxial layer and simplify the design of the overall LED structure _, the fine product of the sail, _=== large application range. In addition, the detachable age type (not shown) can be connected to the base substrate 150 to further enhance the heat dissipation capability, and the heat radiation film (10) can radiate heat to the heat dissipation tree. On the device, the heat production of the heat sink can be made larger than the temperature of the LED"11G of the heat source, and the heat dissipation mechanism of the heat conduction of the heat is completely different. According to the actual measurement, when the temperature of the led epitaxial layer 110 is 115 ° C, the temperature of the heat sink can be as high as 125.参阅 Referring to the third figure, a processing flow chart of the method for fabricating the heat radiation and heat-emitting diodes according to the present invention. As shown in the third figure, the maker of the present invention de-sequences 201143176, step S10 to step S50', which first begins with step s J〇, which layer is formed on the sapphire substrate, and then proceeds to step S2(), A heat-radiation heat-dissipating film formed on the base substrate can be coated on a heated base substrate using a composition comprising a liquid, a metal, and a non-metal compound, and the metal and the non-metallized & Heating under the opening" into a heat radiation film with a crystal structure. The liquid used in the step S2G can be at least one of - the alcohol and the ketone - and the metal and non-metal compound contained in the step can be as described in the embodiment of the second embodiment above, and the material of the base substrate is also The embodiment of the second figure is described, and therefore will not be described again. Then, proceeding to step S30, using the adhesive thermal conductive layer to bond the sapphire substrate and the heat radiation heat dissipation _, the bristle substrate including the LED i crystal layer and the base substrate including the thermal Han heat radiation film are integrated into a heat radiation heat emitting diode structure. . Next, in step S40, the electrical wiring is pasted to electrically connect the silicon oxide layer to the positive and negative terminals of the external power source. Finally, in step S5, the LED layer is coated with the encapsulant, and the function of the package is as described in the embodiment of the second figure. The above manufacturing method may further include attaching to the base substrate using a heat sink, thereby further enhancing heat dissipation capability, as described in the embodiment of the second figure. Referring to the fourth figure, a schematic diagram of a structure of a heat radiating heat emitting diode according to another embodiment of the present invention. As shown in the fourth figure, the heat radiation heat dissipation LED structure 1〇2 of the present invention comprises an LED crystal layer 11〇, a sapphire substrate 12〇, a first thermal light-radiating film “I, an adhesive thermal layer 130, a nano glaze layer”. 160. The second heat radiation heat dissipation film 142, the base substrate 150, at least one electrical connection line (not shown), and an encapsulant (not shown) wherein the LED crystal layer 110 is formed on the upper surface of the sapphire substrate 120. The first heat radiation heat dissipation film 1410 is formed on the lower surface of the sapphire substrate 120, the second heat radiation heat dissipation film 142 is formed on the base substrate 150, and the nano glaze layer 16 is attached to the first heat radiation heat dissipation film 142. Forming an 'adhesive heat conducting layer 13 用以 is used to connect the first heat radiation heat dissipation film 141 and the nano glaze layer 160 to 201143176 to form an integrated heat radiation heat dissipation LED structure 102. The first heat radiation heat dissipation film 141 and the second heat radiation The heat dissipation film 142 has the same characteristics as the heat radiation heat dissipation film 140 of the embodiment of the second embodiment, and the LED epitaxial layer 110, the sapphire substrate 120, the adhesive heat conduction layer 130, the base substrate 150, at least one electrical connection line, and the encapsulant As described in the embodiment of the second figure above, the difference between the thermal expansion coefficients of the first heat radiation heat dissipation film 41 and the sapphire substrate 120 is not more than 0.1%, and the difference between the thermal expansion coefficients of the second heat radiation heat dissipation film 142 and the base substrate 150 is The ratio is not more than 0.1%. The nano glaze layer 16 0 is formed by sintering the nano particles at a high temperature to form a surface having a nanocrystallization. The surface roughness Ra of the nano glaze layer 160 may be 10 to 2000. The present embodiment is characterized in that the heat generated by the LED epitaxial layer 110 can be thermally radiated by the first heat radiation heat dissipation film 141 to the adhesive heat conductive layer 13 and the nano glaze layer 160'. The heat radiation film 142 radiates heat radiated through the nano glaze layer 16 向外 to the base substrate 150 by heat radiation, thereby improving the heat dissipation efficiency of the entire structure of the k liter. The above is only for explaining The preferred embodiments of the present invention are not intended to limit the invention in any way, and any modifications or alterations to the present invention are made in the spirit of the invention. All of them should still be included in the scope of the present invention. [First Description of the Drawings] The first figure is a schematic diagram of a conventional light-emitting diode structure. The second figure is a schematic diagram of a heat-radiating heat-dissipating diode structure according to the present invention. The second figure is a process flow diagram of a method for fabricating a heat-dissipating light-emitting diode according to the present invention. 201143176 The fourth figure is a schematic diagram of a structure of a heat-radiating heat-dissipating diode according to another embodiment of the present invention. 】 1 LED structure 10 LED epitaxial layer 20 sapphire substrate 30 silver glue 40 bracket 50 base substrate 60 connection line 70 package adhesive 80 heat dissipation aluminum substrate 100 heat radiation heat dissipation LED structure 102 heat radiation heat dissipation LED structure 110 LED epitaxial layer 120 sapphire substrate 130 adhesive thermal conductive layer 140 heat radiation heat dissipation film 141 first heat radiation heat dissipation film 142 second heat radiation heat dissipation film 150 base substrate 160 nano glaze layer heat conduction direction R heat radiation S10 on the sapphire substrate to form LED epitaxial layer S20 in the base Forming a heat radiation heat dissipation film on the substrate 201143176 S30 using an adhesive thermal conductive layer to bond the sapphire substrate and the heat radiation heat dissipation film S40 Electrically connecting the LED to an external power S50 epitaxial layer using encapsulant LED epitaxial cladding layer is electrically connected to cable
1010