201133586 六、發明說明： 【發明所屬之技術領域】 本發明係關於被使用在液 理等的基板清洗裝置，更詳言 送式基板處理裝置中，比過去 離液等進行的化學液處理之後 水的使用量的節水型清洗系統 【先前技術】 在液晶面板的製造中，在 板的表面上，反復地進行抗蝕 劑剝離的各種處理，藉此，在 各種處理方式的代表性的方式 板運送方式之基板處理裝置， 時，對其表面反覆進行各種處 例如，在平流式的蝕刻處 給至在以水平姿勢或以朝側方 的基板表面上，接著，在沖洗 洗。以圖6，對平流式蝕刻處 典型的裝置結構進行說明。 沿基板的運送方向，依序 區2A、第2沖洗區2B、最後 區係由獨立的腔室構成，分別 沿運送方向並列的多個運送輥 例如上下一組的氣刀4、4係 晶面板用玻璃基板的各種處 之，係關於在稱爲平流式運 更可抑制在利用蝕刻液、剝 的清洗處理中所使用之清洗 作爲材料的大面積的玻璃基 劑塗敷、顯影、餓刻、抗餓 基板表面上形成積體電路。 之一是被稱爲平流方式的基 在沿水平方向運送基板的同 理。 理中，在蝕刻區將蝕刻液供 傾斜的姿勢沿水平方向運送. 區進彳了利用清洗水的表面清 理中的基板清洗裝置的過去 排列有蝕刻區1、第1沖洗 沖洗區2C以及乾燥區3。各 設置有爲了進行基板運送而 。在蝕刻區1的出口附近， 以夾持基板運送線的方式設 201133586 置’用來去除附著於基板表面上的蝕刻液。在第1沖洗區 2A、第2沖洗區2B以及最後沖洗區2C中，以夾持基板運 送線的方式分別設置有對基板的兩面吐出供給清洗水的上 下一對噴淋系統5A、5B和5C。爲了去除附著於基板的兩 表面上的清洗水，在乾燥區3以夾持基板運送線的方式設 有上下一對的氣刀6、6。 清洗水係與基板運送方向相反，其按最後沖洗區2C、 第2沖洗區2B、第1沖洗區2A的順序以串聯（cascade) 方式供給。即，首先由未使用的純水形成的清洗水從最後 沖洗區2C中的噴淋系統5C、5C吐出，對基板的兩面進行 清洗。使用後的清洗水回收到附設於最後沖洗區2C中的槽 7C的內。槽7C內的清洗水從第2沖洗區2B中的噴淋系統 5B、5B吐出，對基板的兩面進行清洗。使用後的清洗水回. 收到附設於第2沖洗區2B中的槽7B的內。槽7B內的清 洗水從第1清洗區2A中的噴淋系統5A、5A吐出，對基板 的兩面進行清洗。將清洗使用完的清洗水廢棄。 藉此，清洗水的清潔度按第1沖洗區2A、第2沖洗區 2B '最後沖洗區2C的順序提高，可以少量的清洗水進行 有效的清洗。 即’在基板運送線上行進的基板在蝕刻區1接受蝕刻 處理，藉出口附近的氣刀4，將蝕刻液從兩面去除至兩面 未乾燥的程度，然後，在第1沖洗區2A，藉清潔度低（污 染度高的）清洗水，對兩個面預先進行清洗。將使用後的清 洗水廢棄。接著，在第2沖洗區2B，藉由清洗度高（污染 201133586 度低的）清洗水，對兩個面進行正式清洗，最後，利用由最 後沖洗區2C中未使用的純水形成的清洗水，對兩個面進行 最後清洗。由於是採用越往下游側，清潔度越高的清洗水， 故串聯地使用清洗水，雖然謀求該使用量的削減，但也可 對基板賦予較高的清潔度。 只要在像日本那樣水豐富的國家、地區使用，即使是 以串聯方式使用清洗水之如上述般的基板清洗裝置，仍不 會產生特別的問題。但是，會有因國家、地區的不同，而 對清洗水的使用量，產生較大限制的情況，在這樣的情況 下，即使是上述方式的基板清洗裝置，清洗水的使用量也 會變得過大，故需要可進一步節水的基板清洗裝置。 關於基板清洗裝置中的節水，在專利文獻1中揭示有 下述的基板清洗裝置，其在化學液處理區和噴淋式水洗區 之間組合有液膜式清洗機構及利用液刀的除液機構；液膜 式清洗機構係將清洗水呈幕狀供給到基板表面；利用液刀 的除液機構係在液膜式清洗機構的-下游側，將清洗水作成 液膜狀並且相對於基板運送方向沿相反方向傾斜而噴出， 以置換殘留於基板兩面上的清洗液。另外，在專利文獻2 中，揭示有下述的基板清洗裝置，其組合有第1噴嘴列和 第2噴嘴列；該第1噴嘴列係沿與基板運送方向垂直的水 平方向並列有多個扁平型噴霧嘴，各噴霧嘴以沿周方向每 次以相同角度扭轉的方式配置；該第2噴嘴列係在第1噴 嘴列的下游側’將多個扁平型噴霧嘴以使來自各噴霧嘴的 液膜重疊的方式沿與基板運送方向垂直的水平方向並列， 201133586 而形成幕狀液膜° 在任一基板清洗裝置中’對結束化學液處理的基板表 面上的運送方向的一部分上’以涵蓋全寬集中供給清洗水 之所謂的水坑方式’進行清洗。涵蓋全寬被供給到基板的 面上的運送方向的—部分上之清洗水’係呈厚膜狀放置於 基板上，並朝側方排出。這樣的水坑清洗’係對基板運送 方向較窄的範圍一部分一部分地進行清洗’將化學液置換 爲清洗水，所以與噴淋清洗相比較，可大幅度地削減清洗 水的使用量。但是’當考慮清洗效果時’實際的情況是’ 其節水量不能說是充分的。 〔先前技術文獻〕 〔專利文獻〕 專利文獻1 : W02005/05 3 006A1號文獻 專利文獻2:日本特開2006-205086號文獻 【發明内容】 〔發明所欲解決之課題,〕 本發明的目的在於提供一種可在維持高度的清洗性能 的同時，大幅度地削減清洗水的使用量之運送式基板處理 裝置的節水型清洗系統。 〔用以解決課題之手段〕 爲了達成上述目的，本發明人認爲，雖然專利文獻1、 2中記載之有效率的噴嘴結構的開發當然有必要，但重要 的是’更進一步總體地多角度檢討基板處理裝置的清洗系 統整體，從清洗效率、清洗水的水質管理的雨方面來重新 201133586 評估清洗系統。結果，獲知下述的事實。 爲了提高清洗性，利用化學液進行之基板處理後的清 洗區須設置多段，爲了節約清洗水，必須從下游側向上游 側以串聯（cascade)方式將清洗水供給至多個清洗區。在 串聯式供水中，在最上游側的清洗區使用完後之清洗水的 污染度高，故全部廢棄，然而在將清洗水的污染度抑制爲 較低的程度上來說是有效的。其結果，供給至最下游側的 清洗區的清洗水量、與從最上游側的清洗區排出的清洗水 量相等，因此，從梟上游側的清洗區排出之清洗水的量支 配著清洗水的使用量。所以，節約最上游側的清洗區的清 洗水量，減少清洗水的廢棄量是重要的，由此觀點看來， 作爲最上游側的清洗區的清洗方式而言，水坑處理是不可 缺少的。 在最上游側的清洗區採用水坑處理時，針對每片基板 間歇地供給清洗水。即，在基板前端到達水坑處理區前的 時刻，開始進行清洗水的吐出，在基板後端完全通過水坑 處理區之後，停止清洗液的吐出。藉此，涵蓋基板的運送 方向全長進行水坑處理。水坑處理中自吐出噴嘴之每單位 時間的吐出量係以可進行必要的液體置換的方式設定。因 此，認爲針對基板全長通過的時間，極力地排除無用的吐 出時間係牽涉著清洗水的節約。 但是，如果縮短最上游側之水坑處理的清洗水吐出時 間，則水坑處理部的總吐出量會減少，清洗水的廢棄量也 會減少，由此，最下游側之清洗區的未使用的清洗水的供 201133586 給會減少，清洗水的污染度會增加，其結果，清洗水的使 用量增加。圖5係表示串聯供水方式清洗系統的最上游側 區所採用之清洗水的污染度和使用量之間的關係。所要求 的清洗品質相同。根據該圖，得知下述的內容。 有清洗水的污染度越高，其使用量越增加的傾向。關 於最上游側的清洗區所使用之清洗水的污染度，如果所要 求的清洗品質相同，則在清洗系統中，存在固有的容許限 度，系統長度越小，容許限度越低。即，即使污染度高， 若增加處理次數，仍可確保清洗品質，按其程度，系統長 •度會隨之變長。由此’爲了減小系統長度，降低最上游側 的清洗區的污染度是不可缺少的。 如此，在從下游側向上游側串聯地供給清洗水的串聯 方式的情況，在清洗水的污染度最高之最上游側的清洗區 所使用之清洗水的水質管理是重要的，其重要度隨著系統 長度越小則越增加。所以，在系統長度存有限制的狀況下， 在最上游側的清洗區，以將比根據基板長度決定之使用量 還多的清洗水進行使用廢棄的方式進行系統設計，爲了確 保容許限度，有意地大量地增加使用量、廢棄量，結果， 這一點牽涉著系統長度的縮短、節水。 本發明的運送式基板處理裝置中的節水型清洗系統是 根據上述觀點而完成，其特徵爲，具備：多個清洗區，其 沿基板運送方向排列於化學液處理區的下游側；水坑處理 用的清洗機構，其設置於最上游側的清洗區；分別設置於 第2段以後的清洗區的噴淋處理用清洗機構和回收使用後 201133586 的清洗水的槽；供水系統，其將由未使用的純水形成的清 洗水，供給至最下游側的清洗區中的清洗機構；串聯 (cascade)方式送水系統，其將各槽內的清洗水依序輸送 到上游側的清洗區中的清洗機構；以及排水系統，其將在 最上游側的清洗區中使用完的清洗水吐出；以下述方式設 定來自該清洗區中之清洗機構的清洗水的吐出開始時刻和 吐出結束時刻，該方式爲：在基板前端進入最上游側的清 洗區的時刻之前，開始從該清洗區中的清洗機構吐出清洗 水，在基板後端從該清洗區脫離的時刻之後，停止從該清 洗區中的清洗機構吐出清洗水，並且確保將從最上游側之 清洗區中的清洗機構吐出的清洗水的污染度維持在容許限 度內且在其限度附近所需之清洗水的吐出時間。 在本發明的運送式基板處理裝置中的節水型清洗系統 中，在化學液處理區結束了化學液處理的基板依序通過多 個清洗區。在最上游側的清洗區，沿基板運送方向，每次 以既定的長度逐次進行利用水坑處理的清洗，在其後的清 洗區進行噴淋處理。關於清洗水方面，在最下游側的清洗 區使用未使用過的純水，其使用後的清洗水係被使用在其 上游側的清洗區，最後的清洗水係在最上游側的清洗區被 使用於水坑處理之後，全部廢棄。藉此，去.除被使用於水 坑處理後之污染度高的清洗水的影響。另外，藉由採用從 上游側到下游側清潔度依序增加的清洗水之階段式處理， 可有效率地對基板的表面進行清潔。 此外，在進行水坑處理的最上游側的清洗區，不僅從 -10- 201133586 基板的前端到後端涵蓋全長進行水坑處理，而且以供給至 該清洗區的清洗水的污染度維持在容許限度內且在其限度 附近的方式，設定清洗水的吐出時間。因此，可始終供給 污染度在容許範圍內的清洗水，結合水坑處理的採用，可 將清洗水的使用量抑制成最小限度。 即，若減少最上游側的清洗區的清洗水的廢棄量，雖 然清洗水的使用量會減少，但清洗水的污染度會提高。反 之，如果增加最上游側的清洗區域的清洗水的廢棄量，雖 然清洗水的使用量增加，但清洗水的污染度降低。在本發 明的運送式基板處理裝置中的節水型清洗系統中，因爲是 以供給至最上游側的清洗區之清洗水的污染度維持在容許 限度內且在其限度附近的方式，來設定清洗水的吐出時 間，因此，可維持清洗品質，同時將清洗水的使用量減小 到最小限度。 最上游側的清洗區中之清洗水的吐出時間調整，可爲 調整基板前端進入該清洗區的時刻之吐出時間的方法，亦 可爲調整基板後端脫離該清洗區的時刻之後之吐出時間的 方法中的任一者，也可爲兩者，但是，在實際操作方面， 即使在基板後端脫離該清洗區的時刻之後，仍持續吐出， 藉由該吐出延長時間的調整，將從最上游側的清洗區中的 清洗機構吐出之清洗水的污染度控制在所期望値，這方式 在操作上較容易，是較佳的方式。 另外，最佳爲，使最上游側的清洗區所使用之清洗水 的污染度的控制目標値與容許限度一致，但實際上有其困 -11 - 201133586 難性，故以控制在容許限度附近爲佳，具體來說，以在將 污染度的容許限度設爲X的條件下，控制在X以下0.9X 以上的範圍內爲佳，以控制在X以下0.95以上的範圍爲最 佳。若過度降低控制値，則基板會過度清洗，清洗水的使 用量會增加。附帶一提，清洗水的污染度（水質）可藉由導 電率、電阻係數、pH値等來檢測。沒有污染的純水的導電 率低（電阻係數高），伴隨污染的進行，導電率會上升（電阻 係數下降）。 以上爲本發明的運送式基板處理裝置中的節水型清洗 系統中的主要節水對策，不過，在本發明的運送式基板處 理裝置中的節水型清洗系統中，也可藉由在該節水對策中 進一步添加下述的處理效率提高對策，來使節水型清洗系 統進一步小型化。 該對策是指下述的兩段式水坑處理，其係在比第2段 清洗區中的噴淋處理用清洗機構更靠下游側，設置另一水 坑處理用清洗機構，該另一水坑處理用清洗機構是以比設 置於最上游側的清洗區的水坑處理用清洗機構還高的壓 力，吐出清洗水。於是，在該兩段水坑處理中，清洗水的 吐出壓力的差和基板運送速度的差是重要的。 關於兩段水坑處理的清洗水的吐出壓力，來自最上游 側的清洗區之水坑處理用清洗機構的清洗水的吐出壓力係 以0.08〜O.IMPa左右的低壓爲合適，相對地，來自附設於 第2段清洗區之水坑處理用清洗機構的清洗水的吐出壓 力，則以0.3〜0.4MPa左右的中壓爲佳。其原因在於：當 -12- 201133586 採用中壓水坑處理時，清洗水會伴隨衝擊力而碰撞基板， 藉此，可獲得與噴淋處理用清洗機構相匹敵的高液體置換 效率，藉由與噴淋處理用的清洗機構的代替，可將清洗裝 置的全長縮短。當此處的吐出壓力過高時，會有在水坑處 理中消耗所需以上的清洗水，而在其他的處理中清洗水不 足的虞慮，也會產生對基板造成損害的虞慮。 關於水坑兩段處理的基板運送速度，較佳爲，從附設 於第2段清洗區的水坑處理用的清洗機構之下方通過的基 板速度，係小於從附設於最上游側的清洗區之水坑處理用 的清洗機構之下方通過的基板速度。即，以將第1段水坑 處理設爲低壓吐出•高速運送，將第2段水坑處理設爲中 壓吐出•低速運送的兩段水坑處理爲佳。其原因在於：在 第2段水坑處理中確保較多的清洗水量以獲得與噴淋處理 相匹敵的清洗力或比其更佳的清洗力。 關於具體的基板運送速度，最好與設置於清洗區下游 側的乾燥區內的氣刀所進行之乾燥處理中的基板運送速度 —致，這樣的速度控制可簡化。附帶一提，利用乾燥區內 的氣刀進行的處理中之基板運送速度爲15 0 mrn/s以下。該 運送速度爲第1段水坑處理中之基板運送速度的0.25〜0.5 倍，從清洗性的方面來看，情況良好。 伴隨在第2段清洗區進行水坑處理，必須將供給到該 區的清洗水分配到水坑處理用清洗機構和噴淋處理用清洗 機構，該分配比例爲，在將對該清洗區整體之清洗水的供 給量設爲1的條件下，將分配至水坑處理用清洗機構的比 -13- 201133586 例設爲〇·5〜0.8。即，如果採用低壓高速水坑處理和中壓 低速水坑處理的組合，則在第2段的清洗區，中壓水坑處 理成爲主體，形成於水坑處理用清洗機構的上游側的噴淋 處理區域成爲基板速度調整區域，噴淋處理用清洗機構用 於防止基板乾燥，其等均爲與清洗處理沒有直接關係的次 要功能。 於是，按照低壓高速水坑處理和中壓低速水坑處理的 組合，第2段清洗區的下游側成爲最後清洗區，可抑制清 洗系統的全長。 " 作爲最上游側的清洗區和第2段清洗區中的水坑處理 用的清洗機構，從液置換效率的觀點來看，最好是採用第 1噴嘴列和第2噴嘴列的組合；該第1噴嘴列爲，以三角 形的膜狀吐出清洗水並呈直線狀吹送到基板表面上的扁平 型噴霧嘴排列在與基板運送線垂直的線橫寬方向上，而各 噴霧嘴的直線狀噴霧圖案相對於線橫寬方向，係朝相同方 向以既定角度傾斜；該第2噴·嘴列爲，在第1噴嘴列的下 游側，上述扁平型噴霧嘴排列於線橫寬方向上，使來自各 噴霧嘴的液膜伴隨既定的重疊而沿上述橫向寬度方向連續 地形成涵蓋橫向寬度方向全部區域的幕狀液膜。 較佳爲，對於將第2段清洗區使用完的清洗水加以回 收的槽，組合檢測該槽內之清洗水的污染度的水質感測 器。水質感測器只要可檢測清洗區的污染度即可，可採用 導電率測定器、電阻係數計、pH計等。 在最上游側之清洗區中的水坑處理用清洗機構等發生 -14- 201133586 故障的情況，最上游側的清洗區的清洗不足，從最上游到 第2段清洗區使用完的清洗水的污染度提高。藉由以上述 水質感測器加以檢測，可立即檢測到最上游側之清洗區中 的水坑處理用清洗機構等的故障，所以得以盡可能地抑制 清洗不良品的發生。在水坑處理用清洗機構由上述兩個噴 嘴列形成的情況，上述水質監視器特別有效。此乃因在由 上述兩個噴嘴列形成的情況，是採用多個噴霧嘴，故障的 頻率因應其個數而增加之故。 〔發明的功效〕 在本發明的運送式基板處理裝置中的節水型清洗系統 中，在沿基板運送方向排列的多個清洗區，在與基板運送 方向相反的方向，從下游側向上游側以串聯方式供給清洗 水，在最上游側的清洗區進行水坑處理，並且將使用於水 坑處理後的清洗水全部廢棄，且該清洗區的清洗水的吐出 時間係以該清洗水的污染度維持在容許限度內且在其限度 附近的方式，設定-水坑處理的清洗水的吐出時刻，所以即 使在系統長度小的情況下，仍可一面維持必要的清洗能 力，一面大幅度地減少清洗水的使用量。另外，在可廣範 圍地因應清洗能力之需求値的變更値。 【實施方式】 以下，根據附圖，對本發明的運送式基板處理裝置中 的節水型清洗系統的實施形態進行說明。 本實施形態的節水型清洗系統如圖1所示，使用於在 液晶面板用玻璃基板的製造中所採用的平流式蝕刻裝置， -15- 201133586 包括設置於該蝕刻裝置中的化學液處理區1 0的下游側的 多個清洗區2 0、3 0和4 0以及乾燥區5 0，以及分別與清洗 區30、40組合的槽60、70。各區係形成於矩形的腔室內， 在各腔室內設置沿基板運送方向排列的多個基板運送輥 90，以便以水平姿勢沿水平方向運送應進行蝕刻處理的玻 璃基板80。 在化學液處理區10中，爲了將化學液供給到在基板運 送線上行進的玻璃基板80的表面，在腔室內的基板運送線 上方，設置未圖示的化學液供給機構。化學液處理區10的 出口附近爲除液區11。在除液區11，設置夾持基板運送線 之上下的空氣刀用狹縫噴嘴12、13，以便去除附著於玻璃 基板80的表面和背面上的化學液。 構成基板清洗裝置的多個清洗區20、30和40，在此 係由水坑處理區20、第1噴淋區30和第2噴淋區4 0構成。 位於最上游側的水坑處理區2 0具備：以在腔室內的入口附 近且位於基板運送線上方的方式設置的水刀用狹縫噴嘴 21;位於狹縫噴嘴21的下游側，設置於基板運送線上方的 水坑處理式清洗機構22;以及夾持基板運送線而設置於清 洗機構22下側的液膜方式的清洗機構23。水刀用的狹縫 噴嘴21係在入口附近將洗淨液作成液刀狀而涵蓋玻璃基 板80的整個寬度範圍進行噴吹，以便使玻璃基板80表面 的蝕刻罈理停止。 水坑處理式的清洗機構22係如圖2〜圖4所示那樣， 由在基板運送線上方沿基板運送方向以既定間隙設置的兩 -16- 201133586 個噴嘴列22A、22B構成。 位於上游側的第1噴嘴列22 A包括：延伸於與玻璃基 板80的運送方向垂直的板寬方向上的集管24A ;以及以既 定間距朝下安裝於集管24A上的多個噴霧嘴25A、25A...。 噴霧嘴25A、25A...係將清洗液作成三角形的薄膜而吐出的 人字型扁平噴嘴，玻璃基板80表面的直線狀噴霧圖案26 A 係以相對於板寬方向以既定角度Θ1(最好爲40〜80度，在 此爲60度）傾斜的方式沿周方向位移地設置。板寬方向的 噴霧嘴25Α、25Α...的排列間距Ρ1，係設定成在鄰接的噴霧 嘴25Α、25Α之間直線狀噴霧圖案26Α沿板寬方向重疊 (overlap)，而實現均勻地賦予撃打的佈置。具體來說，噴 霧嘴25A、25A...的排列間距P1爲直線狀噴霧圖案26A在 板寬方向上的長度D1的1.0〜0.8倍。 藉此，第1噴嘴列22A涵蓋玻璃基板80上的既定長度 供給清洗水，藉以在該玻璃基板80上形成水坑，且促進玻 璃基板8 0上的清洗水朝玻璃基板8 0的側方排出。 位於下游側的第2噴嘴列22B包括：延伸於與玻璃基 板80的運送方向垂直的板寬方向上的集管24B;以既定間 距朝下安裝於集管24B上的多個噴霧嘴25B、25B...。噴霧 嘴25 B ' 25 B...爲將清洗液作成三角形薄膜而吐出的人字形 扁平噴嘴，爲了防止玻璃基板80表面的直線狀噴霧圖案 2 6B在鄰接的噴嘴之間發生干涉的情況，最好是，直線狀噴 霧圖案26B係以相對於板寬方向以些微的角度Θ2(最好爲 1 5度以下，在此爲丨〇度）傾斜的方式，沿周方向發生位移地 -17- 201133586 設置。另外，板寬方向的噴霧嘴25B、25B...的排列間距P2 係與噴霧嘴25 A、25 A…的排列間距P1相同，該P2係以在 鄰接的噴霧嘴25B、25B之間直線狀噴霧圖案26B沿板寬 方向重疊的方式，成爲直線狀噴霧圖案26B在板寬方向上 的長度D2的0.5倍左右。 藉此，第2噴嘴列22B沿板寬方向連續，並且形成朝 向玻璃基板80的表面流下的幕狀清洗液膜，第1噴嘴列 22A對供給到玻璃基板80上的清洗水，形成堰堤。 夾持基板運送線而設置於清洗機構22下側的液膜方 式清洗機構23，除了其朝向與清洗機構22的第2噴嘴列 2 2B相反的方向以外，爲實質上結構相同的背面噴嘴列， 藉由從沿板寬方向並列的多個噴霧嘴吐出清洗水，使幕狀 的清洗水膜碰撞玻璃基板80的背面。來自清洗機構23中 的各噴嘴的清洗水的吐出壓力係與清洗機構22相同。 另外，其後，針對來自作爲在本實施形態的節水型清 洗系統中重要的結構之水坑處理區20內的清洗機構21、 22、23的清洗水的吐出開始時刻，吐出停止時刻進行詳細 說明。 設置於水坑處理區20下游側的第1噴淋區30包括： 夾持基板運送線而設置的上下一對噴淋系統31、32;設置 於其下游側之水坑處理形式的清洗機構3 3 ;以及夾持基板 運送線而設置於清洗機構33下側之液膜方式的清洗機構 34。 噴淋系統31、32具有沿基板運送方向和與其相垂直的 • 18 - 201133586 橫寬方向呈矩陣狀設置的多個錐型噴霧嘴，將清洗 蓋範圍散佈於玻璃基板80的表面及背面。水坑處理 清洗機構33的結構與設置於水坑處理區20中的清 22實質上爲相同的構成，清洗機構3 3係由沿基板 向隔著既定間隙設置的兩個噴嘴列3 3 A、3 3 B構成 洗機構22的區別在於噴嘴列33A、33B中來自各噴 洗水的吐出壓力高於清洗機構22,具體來說爲0.3〜 左右。此爲清洗機構22的噴嘴列22A、22B中各噴 洗水的吐出壓力（爲0.08〜0.1 MPa左右）的約4倍， 的中壓。同樣地，液膜方式的清洗機構34與設置於 理區20中之清洗機構23實質上爲相同結構的背 列。清洗機構34中來自各噴嘴之清洗水的吐出壓力 洗機構3 3相同。 組合於第1噴淋區30的槽60係將容納第1噴 的噴淋系統31、32和清洗機構33、34之腔室內的 加以回收。槽60內的清洗水利用泵6 1加壓而供給 處理區20內的狹縫噴嘴21和清洗機構22、23。爲 洗水朝向狹縫噴嘴21和清洗機構22、23的供給設 性供給，在各供給管上分別介設有控制閥63、64， 設有控制閥65的返回管66係以從栗6 1的下游側: 內的方式設置。 另外，在該槽60中，附加設置有作爲檢測該槽 洗水的水質（污染度）的水質感測器62的導電率測定 狹縫噴嘴2 1和清洗機構22、23吐出的清洗水係從 水遍涵 形式的 洗機構 運送方 。與清 嘴之清 0.4MPa 嘴之清 爲所謂 水坑處 面噴嘴 係與清 淋區30 清洗水 至水坑 了將清 成間歇 並且介 巨槽60 內之清 器。從 排水管 -19- 201133586 2 7全部吐出。 設置於第1噴淋區30下游側的第2噴淋區40爲 的最後沖洗區，其與第1噴淋區30相同’包括夾持基 送線而設置的上下一對的噴淋系統41、42。 組合於第2噴淋區40的槽70係將容納噴淋系統 42之腔室內的清洗水加以回收。槽70內的清洗水係 泵7 1加壓而供給到第1噴淋區3 0內的噴淋系統3 1、 此外，藉由另一個泵72加壓，而供給到第1噴淋區： 的清洗機構3 3、3 4。如前面所述，泵7 2所形成的供 力高於泵71所形成的供給壓力。在後者的供給管上， 有控制閥73，以便將清洗水朝向清洗機構33、34的 設成間歇性供給，並且介設有控制閥74的返回管係以 72的下游側至槽70的內部的方式設置。 另一方面，在第2噴淋區40的噴淋系統41、42 由未使用的純水形成的清洗水係藉由未圖示的泵加壓 由供水管43供給。 設置於第2噴淋區40下游側的乾燥區50係包括 基板運送線的上下一對氣刀用狹縫噴嘴51、52，從通 爲最後清洗區的第2噴淋區40之玻璃基板80的表面 面，去除清洗水。 其次，對本實施形態之節水型清洗系統的運作進 明。 在採用該節水型清洗系統的平流式蝕刻裝置中， 理運作中’應按照既定的時間間隔處理的玻璃基板8 0 所謂 板運 41、 藉由 32 = !0內 給壓 介設 供給 從泵 中， 而經 夾持 過作 和背 行說 在處 被送 -20- 201133586 入化學液處理區ι〇中。送入化學液處理區10的玻璃基板 80在化學液處理區10中行進’在此期間’接受以既定蝕 刻液進行的處理。結束利用鈾刻液的處理的玻璃基板80’ 係在設置於化學液處理區之出口附近的除液區11’藉 由從上下的狹縫噴嘴12、13吐出的氣刀，將附著於表面和 背面上的化學液去除到各面未乾燥的程度後’進入該節水 型清洗系統，接受清洗處理。 以下，對該節水型清洗系統的清洗運作進行說明。該 清洗運作係由清洗水的供給操作和基板運送操作組合而 成。. 關於清洗水，在處理運作中，當基板80通過第2噴淋 區40內的噴淋系統41、42間時，未使用的純水從噴淋系 統41、42被吐出作爲清洗水。吐出而使用於基板80之清 洗處理的清洗水全部被回收於槽中。在第1噴淋區域 30中，在處理運作中，泵71、72運作，清洗水從噴淋系 統.3 1、3 2連續地被吐出。另一方面，在清洗機構3 3、3 4 中，當基板80通過清洗機構33、34之間時，控制閥73會 打開，控制閥7 4會關閉，而在其餘的時間，控制閥7 3會 關閉，控制閥74會打開，藉此，僅僅在基板80通過清洗 機構33、34之間時，從這些機構吐出清洗水。 在此’重要的是泵72的吐出壓力大於泵71的吐出壓 力，從槽70供給至第2噴淋區30之清洗水的約8 0%被送 至清洗機構33、34,剩餘的些微的清洗水從噴淋系統31、 32被吐出。且’送到清洗機構33、34之清洗水中的2/3 -21 - 201133586 從清洗機構3 3被吐出，1 /3從清洗機構3 4被吐出。結果， 被供給至第2噴淋區3 0的清洗水中略多於5 0 %的清洗水從 水坑處理用清洗機構33被吐出。 從噴淋系統31、32和清洗機構33、34吐出的清洗水 被回收於槽60的內部。槽60內的清洗水係藉由因應玻璃 基板80的通過時刻的控制閥63、64、65的操作，從水坑 處理區20的狹縫噴嘴21和清洗機構22、23間歇地吐出。 控制閥63、64、65的操作的詳細內容將於後敘述。 另一方面，關於玻璃基板80的運送，進入化學液處理 區10的玻璃基板80係以250〜300mm/s的高速通過水坑處 理區20，並在第1噴淋區30內的噴淋系統31、32之間減 速。另外，例如，以100mm/s的低速通過清洗機構33、34 之間，保持此速度進入第2噴淋區40,通過噴淋系統41、 42之間。 這些組合的結果，玻璃基板80接受如下的清洗處理。 在玻璃基板80的前端進入設置於化學液處理區10出 口附近之除液區1 1的時刻，控制閥65從打開切換到關閉， 控制閥63、64從關閉切換到打開。藉此，從水坑處理區 2〇中的狹縫噴嘴21和清洗機構22、23開始吐出清洗水。 在該狀態下，玻璃基板8〇進入並通過水坑處理區20。藉 此’來自狹縫噴嘴21的薄膜狀清洗水碰撞到玻璃基板80 的表面，玻璃基板80的表面的餓刻反應完全地停止。接 著’藉由利用清洗機構22進行的水坑處理，可有效率地對 玻璃基板80的表面進行清洗。 -22- 201133586 具體來說，首先，當通過第1噴嘴列22A的下方時’ 從多個扁平型噴霧嘴25A、25A…吐出的清洗液被供給到玻 璃基板80的表面的運送方向一部分。此時，在下游側’藉 由從第2噴嘴列22B中的多個扁平型噴霧嘴25B、25B…吐 出的清洗液，形成沿板寬方向連續的幕狀液膜。因此，從 扁平型噴霧嘴25 A、25A…供給到玻璃基板80表面上的清 洗液被擋住，清洗液留在玻璃基板80的表面上，藉此形成 水坑。並且，從扁平型噴霧嘴2 5 A、2 5 A ...吐出的清洗液相 對於玻璃基板80的板寬方向，以40〜80度的角度（在此爲 60度的.角度）傾斜。基於這些原因，從扁平型噴霧嘴25 A、 25A.··吐出的清洗液使基板上的水坑，產生強力的攪拌。同 時，該清洗液順利地從玻璃基板8 0的表面上朝側方排出。 基於這些原因，在水坑處理形式的清洗機構22中，玻 璃基板 80的表面藉由少量的清洗液高效率地進行水置 換，亦進行利用清洗液的機械式清洗。另外，對於玻璃基 板80的背面，.·藉由從作爲背面噴嘴列的清洗機構23吐出 的清洗水，沿運送方向一部分一部分地進行清洗。在此的 玻璃基板8 0的運送係如前面所述，爲例如2 5 0〜3 0 0 m m / s 的高速運送。 在玻璃基板8 0的後端脫離水坑處理區2 0之後，在經 過既定時間之後，控制閥6 5從關閉切換到打開，控制閥 6 3、6 4從打開切換到關閉。藉此，水坑處理區2 0的清洗 結束’並且停止從狹縫噴嘴21和清洗機構22、23吐出清 洗水。從狹縫噴嘴21和清洗機構22、23吐出的清洗水全 -23- 201133586 部從排水管27被排出。即便在玻璃基板80的後端脫離水 坑處理區20之後，也繼續進行清洗水的吐出，這點將於後 詳細說.明，惟其目的在於增加清洗水從水坑處理區20排出 的量，增加對第2噴淋區40之未使用的純水所形成之清洗 水的供給量。 通過水坑處理區20的玻璃基板80連續地通過第1噴 淋區30。在此，從上下一對的噴淋系統31、32向玻璃基 板80的表面和背面吐出清洗水。此時，玻璃基板80的運 送速度係在設置於噴淋系統3 1、3 2下游側的水坑處理形式 的清洗.機構33所進行的清洗中設定，減小到lOOmm/s程度 的低速。另外，在水坑處理形式的清洗機構33中，與水坑 處理區20中的水坑處理形式的清洗機構22相同效率的水 坑處理，係在玻璃基板80的表面進行，並且對於玻璃基板 80的背面，係利用夾持基板運送線而設置於清洗機構33 下側之液膜方式清洗機構3 4(即背面噴嘴列）來進行清洗。 特別是，在利用水坑處理形式的清洗機構33的表面清 洗中，清洗水係以比水坑處理區20中利用水坑處理形式的 清洗機構22時還高的中等程度壓力，低速地碰撞到運送之 玻璃基板80的表面。該中壓、低速水坑處理呈現相當於噴 淋清洗1段量的清洗能力，由此，可省略1段量的噴淋清 洗，可縮短清洗系統長度。第1噴淋區30的噴淋系統31、 3 2係如前述般，清洗水的吐出量也減少，以發揮作爲玻璃 基板80的運送速度的調整區和玻璃基板80之乾燥防止區 的功能的程度，由水坑處理區2 0的水坑處理用清洗機構 -24- 201133586 22和第1清洗區的水坑處理用清洗機構33進行實質的清 洗。 通過第1噴淋區30的玻璃基板80繼續通過作爲最後 沖洗區的第2噴淋區40。在此，藉由使用由供給自供水管 43之未使用的純水所形成的清洗水，玻璃基板80的清洗 度到達既定程度，清洗完成。結束清洗的玻璃基板80通過 第2噴淋區40之後的乾燥區50，在此期間，藉由來自狹 縫噴嘴51、52的氣刀，去除附著於表面和背面上的清洗水。 在此種清洗系統中，在最上游的水坑處理區域2 0，清 .洗水的清潔度最低，所以該清潔度的維持管理是重要的。 即，不管在最下游的第2噴.淋區40使用之清洗水的清潔度 多高，若.最上游的水坑處理區域20所使用的清洗水的清潔 度未滿容許限度的範圍的話，清洗處理後的玻璃基板80的 清潔度仍會低於容許限度。因此，不僅根據玻璃基板80的 尺寸，來決定最上游的水坑處理區域20之清洗水的使用 量，而且還必須考量確保該清洗水的清潔度來作決定。 即，在水坑處理區20的水坑清洗處理用的清洗機構 22中控制吐出量（吐出壓力、吐出個數），這一點從技術上 是困難的。另外，假定在控制吐出量的情況，其影響擴及 到清洗裝置整體的條件設定。由此，在本實施形態的節水 型清洗系統中，係以水坑處理區20之清洗水的吐出時間’ 來管理清洗水的清潔度。即’如圖5所示’若延長水坑處 理區2 0的清洗水的吐出時間，則在此的清洗水的使用量會 增加，清洗水供給至第2噴淋區40的量會增加。結果’水 -25- 201133586 坑處理區20之清洗水的清潔度會提高。因此，在水坑處理 區20，特別是從玻璃基板80的前端到後端通過水坑清洗 處理用清洗機構2 2之下方的期間，是以不僅在水坑處理區 2〇使清洗水吐出，而且水坑處理區20所使用之清洗水的 污染度收斂在容許限度範圍內的方式，來設定水坑處理區 20之清洗水的吐出時間。 更具體地說，如果使清洗水的污染度下降至必要程度 以上，清洗水的廢棄量會增加過多，故以污染度在容許限 度內且維持在該容許限度附近的方式，變更清洗水的吐出 停止時刻。由於清洗水的吐出開始時刻會影響到水坑處理 區20之清洗水的穩定吐出，並不容易變更，所以最好是藉 由變更吐出停止時刻來調整吐出時間。 結果，與圖6所示之習知的基板清洗裝置相比較，可 使清洗水的廢棄量減半。若顯示具體例，則如下所述。 在玻璃基板爲G8尺寸（2200mmx2500mmx0.7mm)之鋁 蝕刻的情況，清洗水的使用量從1 40L/片減少到90L/片。 節拍時間（takt time )爲45 s/片。水坑處理區20中之玻璃 基板的運送速度爲250mm/s，來自狹縫噴嘴21的吐出量爲 100L/min，來自水坑處理形式的清洗機構22的吐出量爲 100L/min，來自液膜方式的清洗機構 23的吐出量爲 2 5 L/min。 水坑處理區20中之清洗水的吐出停止時刻，爲從玻璃 基板80的後端脫離水坑處理區20的時點起算經過6s之 後。藉此，供給至水坑處理區20之清洗水的污染度（導電 -26- 201133586 率）’被控制在作爲容許限度之3000〜2850pS(Siemens(西 門子））的範圍內。 另一方面，來自第1噴淋區30中的噴淋系統31、32 的吐出量爲33L/min，來自水坑處理形式的清洗機構33的 吐出量爲87L/min，來自液膜方式的清洗機構34的吐出量 爲43.5L/min。來自清洗機構33的吐出量的比例爲53%。 來自第2噴淋區40中的噴淋系統41、42的吐出量與廢棄 量相同，爲90 L/片。從第1噴淋區30內的清洗機構33、 34間至其下游側之玻璃基板的運送速度爲80mm/S。 圖6所示之習知基板清洗裝置中的3個沖洗區的總長 度爲9m，相對地，水坑處理區20、第1噴淋區30和第2 噴淋處理區40的總長度爲6m。 在使水坑處理區20中的清洗水的吐出停止時刻進一 步延遲情況，具體來說，從玻璃基板80的後端通過水坑處 理區2 0的時刻起算經過l〇s後的情況，清洗水的使用量從 90L/片增加到105L/片。 相反地，在將水坑處理區2 0中清洗水的吐出停止時刻 設爲玻璃基板80的後端脫離該區域的時刻的情況’供向水 坑處理區20的清洗水的污染度（導電率）超過容許限度。爲 了使供向水坑處理區20的清洗水的污染度（導電率）收斂在 容許限度內，噴淋方式'的清洗區必須再多1段’系統長度 從6 m增加到9 m。 在玻璃基板爲 G5尺寸（1100mm><1300mmx0_7mm)的 IT 0蝕刻的情況’清洗水的使用量從1 2 0 L /片減少到7 0 L / -27- 201133586 片。節拍時間爲45s/片。水坑處理區20中玻璃基板的運送 速度爲250mm/s，來自狹縫噴嘴21的吐出量爲60L/min， 來自水坑處理形式的清洗機構22的吐出量爲8 OL/min，來 自液膜方式的清洗機構23的吐出量爲20 L/min。 水坑處理區2 0中的清洗水的吐出停止時刻爲從玻璃 基板80的後端脫離水坑處理區20起算經過6s之後。由此， 供向水坑處理區2〇的清洗水的污染度（導電率）控制在作爲 容許限度的lpS〜0.95pS之間。 另一方面，來自第1噴淋區30中的噴淋系統31、32 的吐出量爲15L/min，來自水坑處理形式的清洗機構33的 吐出量爲51L/mi η，來自液膜方式的清洗機構34的吐出量 爲26L/min。來自清洗機構33的吐出量的比例爲55%。來 自第2噴淋區40中的噴淋系統41、42的吐出量與廢棄量 相同’爲70L/片。從第1噴淋區30內的清洗機構33、34 之間到其下游側的玻璃基板的運送速度爲50mm/s。 圖6所示的過去的基板清洗裝置中3個沖洗區的總長 度爲5m，相對地，水坑處理區20、第1噴淋區30和第2 噴淋處理區40的總長度爲3.3m。 在進一步使水坑處理區20中的清洗水的吐出停止時 刻延遲的情況，具體來說，在玻璃基板8 0的後端脫離水坑 處理區2 0的時刻起算經過1 〇 s後的情況，清洗水的使用量 從70L/片增加到80L/片。 相反地’在將水坑處理區20中清洗水的吐出停止時刻 設爲玻璃基板80的後端脫離該區的時刻的情況，供向水坑 -28- 201133586 處理區20的清洗水的污染度（導電率）超過容許限度。爲了 使供向水坑處理區20的清洗水的污染度（導電率）收斂在容 許限度內，噴淋方式的清洗區必須再多1段’系統長度從 3 . 3 m增加到5 m。 在本實施形態的節水型清洗系統中’進一步藉由附設 於槽60的水質感測器62，始終監視供向水坑處理區2〇的 清洗水的導電率。槽60內的清洗水爲使用於第1噴淋區 3〇的噴淋清洗後的清洗水，而該清洗水的導電率急劇地上 升，清洗水的污染度急劇地上升的情況意味上游側的水坑 處理區20的處理不充分。具體來說，爲沿基板運送線的橫 寬方向排列的多個噴霧嘴的一部分發生故障的情況等。如 果在該狀態下進行清洗，則清洗後的玻璃基板80的清潔度 不足。於是，當藉水質感測器6 2檢測到水質惡化時，馬上 停止將玻璃基板80供給至清洗裝置，停止清洗裝置的運 轉。藉此，可將不良品的發生抑制在最小限度。 【圖式簡單說明】 圖1爲表示本發明的一實施形態的節水型清洗系統的 結構圖。 圖2爲該節水型清洗系統中的水坑處理用清洗機構的 側視圖。 圖3爲該水坑處理用清洗機構的前視圖。 圖4爲表示該水坑處理用清洗機構的噴霧區的俯視 ΓΒ7 _ 〇 圖5爲表示清洗水的污染度和使用量的關係的曲線 -29- 201133586 圖6 圖6爲過去典型的基板清洗系統的結構圖。 【主要元件符號說明】 1 蝕刻區 2Α 第1沖洗區 2Β 第2沖洗區 2C 最後沖洗區 3 乾燥區 4、6、6 氣刀 5A ' 5B ' 5 C 噴淋系統 7B、7C 槽 10 化學液處理區 11 除液區 12、13 空氣刀用狹縫噴嘴 2 1 水刀用狹縫噴嘴 51、5 2 狹縫噴嘴 20 水坑處理區 22 水坑處理形式的清洗機構 23、34 液膜方式的清洗機構(背面清洗噴嘴列) 33 水坑形式的清洗機構 22 A 第1噴嘴列 22B 第2噴嘴列 33 A、33B 噴嘴列 24A、24B 集管 -30- 201133586 25 A 、25B 噴 26 A 、26B 直 27 排 3 0 第 3 1、 3 2 噴 40 第 41、 42 噴 43 供 50 乾 60、 70 槽 6 1、 7 1 ' 72 泵 62 水 63 ' 64 、 65 、 73 、 74 控 66 返 80 玻 90 基 質感測器 制閥 回管 璃基板 板運送輥 霧嘴（人字型扁平噴霧嘴） 線狀噴霧圖案 水管 1噴淋區 淋系統 2噴淋區 淋系統 水管（新液供給配管） 燥區 -31-BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate cleaning apparatus used for liquid processing or the like, and more particularly to a water supply substrate treatment apparatus, which is water-treated after chemical liquid treatment in the past. Water-saving cleaning system of the amount of use [Prior Art] In the manufacture of a liquid crystal panel, various processes of resist peeling are repeatedly performed on the surface of the board, whereby the board is transported in a representative manner in various processing methods. In the case of the substrate processing apparatus of the mode, the surface is repeatedly subjected to various places, for example, to the surface of the substrate in the horizontal posture or the lateral direction at the flat flow etching, and then rinsed. A typical device structure at the advection etch will be described with reference to FIG. In the transport direction of the substrate, the sequential region 2A, the second flushing region 2B, and the last region are composed of independent chambers, and a plurality of transport rollers juxtaposed in the transport direction, for example, upper and lower air knife 4, 4 crystal panels Various parts of the glass substrate are coated, developed, hungry, and can be applied to a large-area glass base which is used as a material for cleaning in the cleaning treatment using etching liquid or peeling. An integrated circuit is formed on the surface of the anti-hungry substrate. One is the same as the base called the advection method, which transports the substrate in the horizontal direction. 1. In the etched area, the etchant is transported in a tilted position in a horizontal direction. In the past, the substrate cleaning apparatus in the surface cleaning using the washing water was arranged with the etching zone 1, the first flushing zone 2C, and the drying zone 3. Each is provided for substrate transport. In the vicinity of the exit of the etching region 1, the substrate is transported so as to remove the etching liquid adhering to the surface of the substrate. In the first rinsing zone 2A, the second rinsing zone 2B, and the final rinsing zone 2C, a pair of upper and lower shower systems 5A, 5B, and 5C that supply cleaning water to both sides of the substrate are provided so as to sandwich the substrate transport line. . In order to remove the washing water adhering to both surfaces of the substrate, a pair of upper and lower air knives 6, 6 are provided in the drying zone 3 so as to sandwich the substrate transport line. The washing water system is opposite to the substrate conveying direction, and is supplied in a cascade manner in the order of the last flushing zone 2C, the second flushing zone 2B, and the first flushing zone 2A. Namely, first, the washing water formed of the unused pure water is discharged from the shower systems 5C and 5C in the last flushing zone 2C, and both surfaces of the substrate are cleaned. The used washing water is recovered into the tank 7C attached to the last flushing zone 2C. The washing water in the tank 7C is discharged from the shower systems 5B and 5B in the second flushing zone 2B, and both surfaces of the substrate are cleaned. Wash water after use. The inside of the groove 7B attached to the second flushing zone 2B is received. The washing water in the tank 7B is discharged from the shower systems 5A and 5A in the first washing zone 2A, and both surfaces of the substrate are cleaned. Discard the used cleaning water. Thereby, the cleanliness of the washing water is increased in the order of the first flushing zone 2A and the second flushing zone 2B' last flushing zone 2C, and a small amount of washing water can be used for effective cleaning. That is, the substrate traveling on the substrate transport line is subjected to etching treatment in the etching region 1, and the etching liquid is removed from both sides to the extent that both surfaces are not dried by the air knife 4 in the vicinity of the outlet, and then, in the first processing area 2A, the cleanliness is used. The low (highly polluted) washing water is pre-cleaned on both sides. Discard the used washing water. Next, in the second rinsing zone 2B, the two surfaces are subjected to the main cleaning by the washing water having a high degree of cleaning (contamination of 201133586 degrees), and finally, the washing water formed by the unused pure water in the last rinsing zone 2C is used. , the final cleaning of the two faces. Since the washing water having a higher cleanliness is used on the downstream side, the washing water is used in series, and although the amount of use is reduced, the substrate can be provided with a high degree of cleanliness. As long as it is used in countries and regions rich in water like Japan, even if the substrate cleaning apparatus using the washing water in series is used as described above, no particular problem arises. However, there is a case where the amount of the washing water used is greatly limited depending on the country and the region. In such a case, even in the substrate cleaning device of the above-described method, the amount of the washing water used becomes Too large, there is a need for a substrate cleaning device that can further save water. Regarding water saving in the substrate cleaning apparatus, Patent Document 1 discloses a substrate cleaning apparatus in which a liquid film type cleaning mechanism and a liquid separation using a liquid knife are combined between a chemical liquid processing area and a shower type water washing area. The liquid film type cleaning mechanism supplies the washing water to the surface of the substrate in a curtain form; the liquid removing mechanism by the liquid knife is on the downstream side of the liquid film type cleaning mechanism, and the washing water is formed into a liquid film and transported relative to the substrate. The direction is inclined in the opposite direction and ejected to replace the cleaning liquid remaining on both sides of the substrate. Further, Patent Document 2 discloses a substrate cleaning apparatus in which a first nozzle row and a second nozzle row are combined, and the first nozzle row is arranged in parallel in a horizontal direction perpendicular to the substrate transport direction. a spray nozzle, wherein each spray nozzle is disposed to be twisted at the same angle every time in the circumferential direction; and the second nozzle row is on the downstream side of the first nozzle row, and a plurality of flat spray nozzles are provided for each spray nozzle The liquid film overlaps in a horizontal direction perpendicular to the substrate transport direction, and the curtain liquid film is formed in 201133586. The so-called puddle method of supplying concentrated washing water in a wide range is performed for cleaning. The portion of the cleaning water covering the direction in which the full width is supplied to the surface of the substrate is placed in a thick film on the substrate and discharged sideways. Such a puddle cleaning is performed by partially washing a portion of the substrate in a narrower direction of transportation. The chemical liquid is replaced with washing water, so that the amount of washing water used can be greatly reduced as compared with the shower cleaning. However, when the cleaning effect is considered, the actual situation is that the amount of water saved cannot be said to be sufficient. [Prior Art Document] [Patent Document] Patent Document 1: W02005/05 3 006A1 Document Patent Document 2: JP-A-2006-205086 [Summary of the Invention] [Problems to be Solved by the Invention] The object of the present invention is Provided is a water-saving type cleaning system of a transport type substrate processing apparatus capable of drastically reducing the amount of use of washing water while maintaining high cleaning performance. [Means for Solving the Problems] In order to achieve the above object, the inventors believe that the development of an efficient nozzle structure described in Patent Documents 1 and 2 is of course necessary, but it is important to further increase the overall angle. The entire cleaning system of the substrate processing apparatus was reviewed, and the cleaning system was re-evaluated from 201133586 in terms of cleaning efficiency and rain management of the water quality of the cleaning water. As a result, the following facts were known. In order to improve the cleaning property, the cleaning zone after the substrate treatment by the chemical liquid is required to be provided in a plurality of stages, and in order to save the washing water, it is necessary to supply the washing water to the plurality of washing zones in a cascade manner from the downstream side to the upstream side. In the tandem type water supply, the cleaning water after the use of the cleaning zone on the most upstream side has a high degree of contamination, so that it is completely discarded, but it is effective in suppressing the degree of contamination of the washing water to a low level. As a result, the amount of washing water supplied to the washing zone at the most downstream side is equal to the amount of washing water discharged from the washing zone of the most upstream side. Therefore, the amount of washing water discharged from the washing zone on the upstream side of the weir is governing the use of washing water. the amount. Therefore, it is important to save the amount of cleaning water in the cleaning zone on the most upstream side and to reduce the amount of washing water to be discarded. From this point of view, puddle treatment is indispensable as a cleaning method for the most upstream cleaning zone. When the rind treatment is performed on the most upstream cleaning zone, the washing water is intermittently supplied for each of the substrates. That is, at the time when the front end of the substrate reaches the puddle treatment zone, the discharge of the washing water is started, and after the rear end of the substrate completely passes through the puddle treatment zone, the discharge of the cleaning liquid is stopped. Thereby, the puddle treatment is performed over the entire length of the transport direction of the substrate. The discharge amount per unit time from the discharge nozzle in the puddle treatment is set so that the necessary liquid replacement can be performed. Therefore, it is considered that the elimination of useless discharge time for the passage of the entire length of the substrate is involved in the saving of the washing water. However, if the washing water discharge time of the puddle treatment on the most upstream side is shortened, the total discharge amount of the puddle treatment unit is reduced, and the amount of waste water to be discarded is also reduced, whereby the cleaning area of the most downstream side is not used. The amount of cleaning water will be reduced for 201133586, and the pollution level of cleaning water will increase. As a result, the amount of cleaning water used will increase. Fig. 5 is a view showing the relationship between the degree of contamination of the washing water used in the most upstream side region of the tandem water supply type cleaning system and the amount of use. The required cleaning quality is the same. From the figure, the following contents are known. The higher the degree of contamination of the washing water, the more the amount of use tends to increase. Regarding the degree of contamination of the washing water used in the cleaning zone on the most upstream side, if the required cleaning quality is the same, there is an inherent tolerance in the cleaning system, and the smaller the system length, the lower the allowable limit. That is, even if the degree of contamination is high, if the number of treatments is increased, the cleaning quality can be ensured, and the system length will become longer depending on the degree. Therefore, in order to reduce the length of the system, it is indispensable to reduce the degree of contamination of the cleaning zone on the most upstream side. In the case where the washing water is supplied in series from the downstream side to the upstream side in series, the water quality management of the washing water used in the washing zone on the most upstream side where the degree of contamination of the washing water is the highest is important, and the importance thereof is The smaller the system length, the more it increases. Therefore, in the case where the system length is limited, in the cleaning zone on the most upstream side, the cleaning water is used in a manner that is more than the amount of use determined based on the length of the substrate, and the system is designed to ensure the allowable limit. The amount of use and the amount of waste are increased in a large amount, and as a result, this involves a shortening of the length of the system and water saving. The water-saving cleaning system in the transport type substrate processing apparatus of the present invention is completed according to the above aspect, and is characterized in that it includes a plurality of cleaning zones arranged in the substrate transport direction on the downstream side of the chemical liquid processing zone; The cleaning mechanism used is installed in the cleaning zone on the most upstream side; the cleaning mechanism for the shower treatment in the cleaning zone after the second and subsequent stages, and the tank for cleaning the water after the use of 201133586; the water supply system, which will be unused The washing water formed by the pure water is supplied to the cleaning mechanism in the cleaning zone on the most downstream side; the cascade water supply system sequentially transports the washing water in each tank to the cleaning mechanism in the cleaning zone on the upstream side And a drainage system that discharges the used washing water in the most upstream cleaning zone; the discharge start time and the discharge end time of the washing water from the cleaning mechanism in the washing zone are set as follows: Before the time when the front end of the substrate enters the cleaning zone on the most upstream side, the cleaning water is discharged from the cleaning mechanism in the cleaning zone, at the rear end of the substrate. After the time when the washing zone is detached, the washing water is discharged from the washing mechanism in the washing zone, and the degree of contamination of the washing water discharged from the washing mechanism in the washing zone of the most upstream side is maintained within an allowable limit and The discharge time of the washing water required near the limit. In the water-saving type cleaning system in the transport type substrate processing apparatus of the present invention, the substrate subjected to the chemical liquid treatment in the chemical liquid treatment zone sequentially passes through a plurality of cleaning zones. In the cleaning zone on the most upstream side, the cleaning by the puddle treatment is successively performed in a predetermined length along the substrate transporting direction, and the showering is performed in the subsequent cleaning zone. Regarding the washing water, unused pure water is used in the washing zone on the most downstream side, the washing water after use is used in the washing zone on the upstream side, and the last washing water is in the washing zone on the most upstream side. After being used in puddle treatment, it is completely discarded. Take this, go. It is affected by the highly polluted washing water used after the puddle treatment. Further, the surface of the substrate can be efficiently cleaned by a staged treatment in which the cleaning water is sequentially increased from the upstream side to the downstream side. In addition, in the cleaning zone on the most upstream side of the puddle treatment, not only the puddle treatment is carried out from the front end to the rear end of the substrate of -10-201133586, but also the pollution degree of the washing water supplied to the cleaning zone is maintained. The discharge time of the washing water is set in a manner within the limit and in the vicinity of the limit. Therefore, it is possible to always supply the washing water having the degree of contamination within the allowable range, and in combination with the use of the puddle treatment, the amount of the washing water can be suppressed to a minimum. In other words, if the amount of washing water in the cleaning zone on the most upstream side is reduced, the amount of washing water used is reduced, but the degree of contamination of the washing water is increased. On the other hand, if the amount of washing water in the cleaning area on the most upstream side is increased, the amount of washing water used is increased, but the degree of contamination of the washing water is lowered. In the water-saving type cleaning system of the transport-type substrate processing apparatus of the present invention, the cleaning is set such that the degree of contamination of the washing water supplied to the cleaning zone on the most upstream side is maintained within the allowable limit and is near the limit. The discharge time of the water can maintain the cleaning quality while minimizing the amount of washing water used. The discharge time adjustment of the washing water in the most upstream cleaning zone may be a method of adjusting the discharge time at the time when the front end of the substrate enters the cleaning zone, or may be a discharge time after adjusting the time when the rear end of the substrate is separated from the cleaning zone. Either method may be used for both. However, in actual operation, even after the time when the rear end of the substrate is separated from the cleaning zone, the discharge is continued, and the adjustment of the discharge extension time is from the most upstream. The degree of contamination of the washing water spouted by the washing mechanism in the side washing zone is controlled to be desired, which is easier in operation and is preferred. In addition, it is preferable that the control target 污染 of the degree of contamination of the washing water used in the cleaning zone on the most upstream side is the same as the allowable limit, but it is actually difficult to control, and thus the control is near the allowable limit. Preferably, specifically, under the condition that the allowable limit of the degree of pollution is set to X, the control is below X. It is better in the range of 9X or more to control below X. The range of 95 or more is the best. If the control enthalpy is excessively lowered, the substrate is over-cleaned and the amount of cleaning water is increased. Incidentally, the degree of contamination (water quality) of the washing water can be detected by the electric conductivity, the electric resistance coefficient, the pH enthalpy, and the like. Pure water without contamination has low conductivity (high resistivity), and conductivity increases as the contamination progresses (resistance coefficient decreases). The above is the main water saving measure in the water-saving type cleaning system in the transport type substrate processing apparatus of the present invention. However, the water-saving type cleaning system in the transport type substrate processing apparatus of the present invention may be used in the water-saving countermeasure. Further, the following treatment efficiency improvement measures are added to further reduce the size of the water-saving cleaning system. This countermeasure is a two-stage puddle treatment in which a puddle treatment cleaning mechanism is provided on the downstream side of the shower treatment cleaning mechanism in the second-stage cleaning zone, and the other water is provided. The pit processing cleaning mechanism discharges the washing water at a pressure higher than that of the puddle processing cleaning mechanism provided in the cleaning zone on the most upstream side. Therefore, in the two-stage puddle treatment, the difference between the discharge pressure of the washing water and the difference in the conveyance speed of the substrate is important. Regarding the discharge pressure of the washing water for the two-stage puddle treatment, the discharge pressure of the washing water from the puddle treatment cleaning mechanism from the most upstream side cleaning zone is 0. 08~O. The low pressure around the IMPa is suitable. In contrast, the discharge pressure of the washing water from the cleaning mechanism for the puddle treatment attached to the second cleaning zone is 0. 3~0. A medium pressure of about 4 MPa is preferred. The reason is that when -12-201133586 is treated with medium pressure puddle, the washing water will collide with the substrate with impact force, thereby obtaining high liquid replacement efficiency comparable to that of the shower cleaning mechanism. Instead of the cleaning mechanism for shower treatment, the entire length of the cleaning device can be shortened. When the discharge pressure here is too high, there is a concern that the required washing water is consumed in the puddle treatment, and the washing water is insufficient in other treatments, which may cause damage to the substrate. It is preferable that the substrate conveyance speed of the puddle two-stage processing is lower than the cleaning speed from the cleaning zone attached to the most upstream side from the cleaning mechanism for the puddle treatment attached to the second-stage cleaning zone. The substrate speed passed under the cleaning mechanism for puddle processing. In other words, it is preferable to treat the first stage puddle treatment as low pressure discharge and high speed transportation, and to treat the second stage puddle treatment as medium pressure discharge and low speed transportation. The reason for this is that in the second stage of the puddle treatment, a large amount of washing water is ensured to obtain a washing power comparable to the spray treatment or a better washing power. Regarding the specific substrate transport speed, it is preferable that such speed control can be simplified as compared with the substrate transport speed in the drying process performed by the air knife provided in the drying zone on the downstream side of the washing zone. Incidentally, the substrate transport speed in the process using the air knife in the dry zone is 15 0 mrn/s or less. The transport speed is 0. of the substrate transport speed in the first stage of puddle processing. 25~0. 5 times, from a cleaning point of view, the situation is good. When the puddle treatment is performed in the second-stage cleaning zone, the washing water supplied to the zone must be distributed to the puddle treatment cleaning mechanism and the shower treatment cleaning mechanism, and the distribution ratio is such that the entire cleaning zone is to be When the supply amount of the washing water is set to 1, the ratio of the ratio of -13 to 201133586 to the cleaning mechanism for the puddle treatment is set to 〇·5 to 0. 8. In other words, in the cleaning zone of the second stage, the intermediate pressure puddle treatment is the main part, and the shower treatment is formed on the upstream side of the puddle processing cleaning mechanism. The area is the substrate speed adjustment area, and the shower processing cleaning mechanism is for preventing the substrate from drying, and these are all secondary functions that are not directly related to the cleaning process. Thus, in accordance with the combination of the low-pressure high-speed puddle treatment and the medium-pressure low-speed puddle treatment, the downstream side of the second-stage washing zone becomes the final washing zone, and the entire length of the cleaning system can be suppressed. " As the cleaning mechanism for the puddle treatment in the most upstream cleaning zone and the second cleaning zone, it is preferable to use a combination of the first nozzle row and the second nozzle row from the viewpoint of liquid replacement efficiency; In the first nozzle row, the flat spray nozzles that discharge the washing water in a triangular shape and are linearly blown onto the surface of the substrate are arranged in a line width direction perpendicular to the substrate transport line, and the spray nozzles are linear. The spray pattern is inclined at a predetermined angle in the same direction with respect to the horizontal width direction of the line; in the second nozzle row, the flat spray nozzle is arranged in the line width direction on the downstream side of the first nozzle row, so that the spray nozzle is arranged in the line width direction The liquid film from each of the spray nozzles continuously forms a curtain-like liquid film covering the entire area in the lateral width direction along the lateral width direction with a predetermined overlap. Preferably, a water quality sensor that detects the degree of contamination of the washing water in the tank is combined with a tank for recovering the washing water used in the second-stage washing zone. As long as the water quality sensor can detect the degree of contamination in the cleaning zone, a conductivity meter, a resistivity meter, a pH meter, or the like can be used. In the case of the puddle treatment cleaning mechanism in the most upstream side of the cleaning zone, the failure of the -14-201133586 occurs, the cleaning of the most upstream cleaning zone is insufficient, and the cleaning water used from the most upstream to the second-stage cleaning zone is used. The pollution level is increased. By detecting by the above-described water quality sensor, it is possible to immediately detect the failure of the puddle processing cleaning mechanism or the like in the cleaning zone on the most upstream side, so that the occurrence of the cleaning defective product can be suppressed as much as possible. In the case where the puddle treatment cleaning mechanism is formed by the above two nozzle rows, the water quality monitor is particularly effective. This is because in the case of the above two nozzle rows, a plurality of spray nozzles are used, and the frequency of the failure increases due to the number of the faults. [Effect of the Invention] In the water-saving type cleaning system of the transport type substrate processing apparatus of the present invention, the plurality of cleaning zones arranged in the substrate transport direction are in the opposite direction to the substrate transport direction, from the downstream side to the upstream side. The washing water is supplied in series, the puddle treatment is performed in the cleaning zone on the most upstream side, and the washing water used in the puddle treatment is completely discarded, and the discharge time of the washing water in the washing zone is contaminated by the washing water. Since the discharge time of the washing water in the puddle treatment is set to be maintained within the allowable limit and in the vicinity of the limit, even when the system length is small, the cleaning can be greatly reduced while maintaining the necessary cleaning ability. The amount of water used. In addition, there is a wide range of changes that can be made in response to the need for cleaning capabilities. [Embodiment] Hereinafter, an embodiment of a water-saving cleaning system in a transport substrate processing apparatus according to the present invention will be described with reference to the drawings. As shown in FIG. 1, the water-saving cleaning system of the present embodiment is used for an advection etching apparatus used in the manufacture of a glass substrate for a liquid crystal panel, and -15-201133586 includes a chemical liquid processing zone 1 provided in the etching apparatus. A plurality of cleaning zones 20, 30 and 40 on the downstream side of 0 and a drying zone 50, and grooves 60, 70 combined with the cleaning zones 30, 40, respectively. Each of the zones is formed in a rectangular chamber, and a plurality of substrate conveyance rollers 90 arranged in the substrate conveyance direction are provided in the respective chambers to transport the glass substrate 80 to be etched in the horizontal direction in a horizontal posture. In the chemical liquid processing zone 10, in order to supply the chemical liquid to the surface of the glass substrate 80 traveling on the substrate transport line, a chemical liquid supply mechanism (not shown) is provided above the substrate transfer line in the chamber. The liquid removal zone 11 is near the outlet of the chemical liquid treatment zone 10. In the liquid-repellent zone 11, the air knife slit nozzles 12, 13 above and below the substrate transport line are provided to remove the chemical liquid adhering to the surface and the back surface of the glass substrate 80. The plurality of cleaning zones 20, 30, and 40 constituting the substrate cleaning apparatus are constituted by the puddle processing zone 20, the first shower zone 30, and the second shower zone 40. The puddle processing zone 20 located on the most upstream side is provided with a water jet slit nozzle 21 provided in the vicinity of the inlet in the chamber and above the substrate transport line; on the downstream side of the slit nozzle 21, on the substrate A puddle processing type cleaning mechanism 22 above the transport line; and a liquid film type cleaning mechanism 23 provided on the lower side of the cleaning mechanism 22, which sandwiches the substrate transport line. The slit for the water jet nozzle 21 is sprayed in a liquid knife shape around the inlet to cover the entire width of the glass substrate 80 so as to stop the etching of the surface of the glass substrate 80. As shown in Figs. 2 to 4, the puddle processing type cleaning mechanism 22 is composed of two -16 to 201133586 nozzle rows 22A and 22B which are provided at a predetermined gap in the substrate transport direction above the substrate transport line. The first nozzle row 22A located on the upstream side includes: a header 24A extending in the plate width direction perpendicular to the conveyance direction of the glass substrate 80; and a plurality of spray nozzles 25A mounted on the header 24A downward at a predetermined pitch 25A. . . . Spray nozzle 25A, 25A. . . The herringbone type flat nozzle which discharges the cleaning liquid into a triangular film, and the linear spray pattern 26 A on the surface of the glass substrate 80 is set at a predetermined angle Θ1 (preferably 40 to 80 degrees with respect to the plate width direction). The 60°) tilting method is arranged to be displaced in the circumferential direction. Spray nozzle 25 Α, 25 板 in the width direction of the board. . . The arrangement pitch Ρ1 is set such that the linear spray pattern 26 is overlapped in the plate width direction between the adjacent spray nozzles 25A and 25B, thereby achieving an arrangement in which the beat is uniformly imparted. Specifically, the spray nozzles 25A, 25A. . . The arrangement pitch P1 is 1. of the length D1 of the linear spray pattern 26A in the plate width direction. 0~0. 8 times. Thereby, the first nozzle row 22A covers the predetermined length of the glass substrate 80 to supply the washing water, thereby forming a puddle on the glass substrate 80, and promoting the washing water on the glass substrate 80 to be discharged toward the side of the glass substrate 80. . The second nozzle row 22B located on the downstream side includes: a header 24B extending in the plate width direction perpendicular to the conveyance direction of the glass substrate 80; and a plurality of spray nozzles 25B, 25B attached to the header 24B downward at a predetermined pitch . . . . Spray nozzle 25 B ' 25 B. . . In order to prevent the linear spray pattern 26B on the surface of the glass substrate 80 from interfering with the adjacent nozzles, the linear spray pattern 26B is preferably a linear spray pattern 26B. It is set to -17-201133586 in the circumferential direction with a slight angle Θ2 (preferably 1 5 degrees or less, here twist) with respect to the width direction of the plate. In addition, the spray nozzles 25B, 25B in the width direction of the plate. . . The arrangement pitch P2 is the same as the arrangement pitch P1 of the spray nozzles 25 A, 25 A..., and the P2 is linearly formed so as to overlap the linear spray pattern 26B in the plate width direction between the adjacent spray nozzles 25B and 25B. The length of the spray pattern 26B in the width direction of the plate D2 is 0. About 5 times. Thereby, the second nozzle row 22B is continuous in the plate width direction, and a curtain-shaped cleaning liquid film that flows down the surface of the glass substrate 80 is formed, and the first nozzle row 22A forms a bank of the washing water supplied onto the glass substrate 80. The liquid film type cleaning mechanism 23 provided on the lower side of the cleaning mechanism 22 that sandwiches the substrate conveyance line has a substantially identical back surface nozzle row except for the direction opposite to the second nozzle row 2 2B of the cleaning mechanism 22 . The curtain-shaped cleaning water film is caused to collide with the back surface of the glass substrate 80 by discharging the washing water from a plurality of spray nozzles arranged in parallel in the sheet width direction. The discharge pressure of the washing water from each of the nozzles in the cleaning mechanism 23 is the same as that of the cleaning mechanism 22. In addition, the discharge start time and the discharge stop time of the cleaning water from the cleaning mechanisms 21, 22, and 23 in the puddle processing zone 20 which is an important structure in the water-saving cleaning system of the present embodiment will be described in detail. . The first shower area 30 disposed on the downstream side of the puddle processing zone 20 includes: a pair of upper and lower shower systems 31, 32 provided to sandwich the substrate transport line; and a cleaning mechanism 3 in the form of a puddle disposed on the downstream side thereof 3; and a liquid film type cleaning mechanism 34 provided on the lower side of the cleaning mechanism 33 while holding the substrate conveyance line. The shower systems 31 and 32 have a plurality of tapered spray nozzles arranged in a matrix in the direction in which the substrate is conveyed and which are perpendicular to the longitudinal direction of the substrate 18, and the width of the cleaning cover is spread over the front and back surfaces of the glass substrate 80. The structure of the puddle treatment cleaning mechanism 33 is substantially the same as the configuration of the cleaning 22 provided in the puddle treatment zone 20, and the cleaning mechanism 33 is composed of two nozzle rows 3 3 A disposed along a substrate with a predetermined gap therebetween. 3 3 B is different from the washing mechanism 22 in that the discharge pressure from each of the spray water in the nozzle rows 33A, 33B is higher than the cleaning mechanism 22, specifically 0. 3~ around. This is the discharge pressure of each of the spray water in the nozzle rows 22A and 22B of the cleaning mechanism 22 (0. 08~0. Medium pressure of about 4 times about 1 MPa). Similarly, the liquid film type cleaning mechanism 34 and the cleaning mechanism 23 provided in the processing area 20 have substantially the same structure. The discharge pressure washing mechanism 3 3 of the washing water from each nozzle in the washing mechanism 34 is the same. The grooves 60 combined in the first shower zone 30 are collected in the chambers of the shower systems 31, 32 and the cleaning mechanisms 33, 34 that accommodate the first spray. The washing water in the tank 60 is pressurized by the pump 61 to be supplied to the slit nozzle 21 and the washing mechanisms 22 and 23 in the treatment zone 20. The supply of the washing water to the slit nozzle 21 and the cleaning mechanisms 22 and 23 is provided, and the control valves 63 and 64 are respectively disposed in the respective supply pipes, and the return pipe 66 provided with the control valve 65 is connected from the pump 6 1 The downstream side: the way inside the setting. In addition, in the tank 60, the conductivity measuring slit nozzle 21 and the cleaning mechanism 22 and 23 which are water quality sensors 62 for detecting the water quality (pollution degree) of the tank washing water are additionally provided. The washing mechanism of the water in the form of a culvert. Clear with the mouth. 4MPa mouth clear is the so-called puddle nozzle nozzle and clearing area 30 cleaning water to the puddle will clear the interval and the clearer in the giant trough 60. Spit out from drain -19- 201133586 2 7 . The second shower area 40 disposed on the downstream side of the first shower area 30 is the last flushing area, which is the same as the first shower area 30. The upper and lower pair of shower systems 41 including the clamp base feed line are provided. 42, 42. The tank 70 combined in the second shower zone 40 recovers the washing water contained in the chamber of the shower system 42. The washing water pump 7 1 in the tank 70 is pressurized and supplied to the shower system 3 1 in the first shower zone 30, and is supplied to the first shower zone by pressurization by the other pump 72: Cleaning mechanism 3 3, 3 4 . As described earlier, the pump 7 2 forms a supply higher than the supply pressure formed by the pump 71. On the latter supply pipe, there is a control valve 73 for intermittently supplying the washing water toward the washing mechanisms 33, 34, and a return pipe of the control valve 74 is provided to the downstream side of the pipe 72 to the inside of the groove 70. Way to set. On the other hand, the washing water formed by the unused pure water in the shower systems 41 and 42 of the second shower zone 40 is supplied from the water supply pipe 43 by a pump (not shown). The drying zone 50 disposed on the downstream side of the second shower zone 40 includes a pair of upper and lower air knife slit nozzles 51, 52 including a substrate transport line, and a glass substrate 80 passing through the second shower zone 40 which is the last cleaning zone. The surface of the surface is removed from the wash water. Next, the operation of the water-saving cleaning system of the present embodiment will be improved. In the advection etching apparatus using the water-saving cleaning system, in the operation, the glass substrate 80 which should be processed according to the predetermined time interval is so-called slab 41, and the supply pressure is supplied from the pump by 32 = !0 And after being clamped and backed up, it was sent -20- 201133586 into the chemical liquid treatment area ι〇. The glass substrate 80 fed into the chemical liquid processing zone 10 travels in the chemical liquid processing zone 10 during which it undergoes treatment with a predetermined etching solution. The glass substrate 80' that has finished the treatment using the uranium engraving liquid is attached to the surface and the liquid removing portion 11' disposed near the outlet of the chemical liquid processing zone by the air knife discharged from the upper and lower slit nozzles 12, 13 After the chemical liquid on the back surface is removed to the extent that the surfaces are not dried, ' enter the water-saving cleaning system and receive the cleaning treatment. Hereinafter, the cleaning operation of the water-saving cleaning system will be described. This cleaning operation is a combination of a supply operation of washing water and a substrate conveying operation. . Regarding the washing water, when the substrate 80 passes between the shower systems 41 and 42 in the second shower zone 40 during the processing operation, the unused pure water is discharged from the shower systems 41 and 42 as the washing water. All of the washing water used for the washing treatment of the substrate 80, which is discharged, is recovered in the tank. In the first spray zone 30, during the processing operation, the pumps 71, 72 operate and the wash water is sprayed from the spray system. 3 1, 3 2 are continuously spit out. On the other hand, in the cleaning mechanisms 3 3, 34, when the substrate 80 passes between the cleaning mechanisms 33, 34, the control valve 73 is opened, the control valve 74 is closed, and at the remaining time, the control valve 7 3 When it is closed, the control valve 74 is opened, whereby the washing water is discharged from these mechanisms only when the substrate 80 passes between the cleaning mechanisms 33, 34. Here, it is important that the discharge pressure of the pump 72 is greater than the discharge pressure of the pump 71, and about 80% of the wash water supplied from the tank 70 to the second shower zone 30 is sent to the cleaning mechanisms 33, 34, and the remaining slight The washing water is discharged from the shower systems 31, 32. Further, 2/3 - 21 - 201133586, which is sent to the washing water of the cleaning mechanisms 33, 34, is discharged from the cleaning mechanism 33, and 1/3 is discharged from the cleaning mechanism 34. As a result, slightly more than 50% of the washing water supplied to the washing water in the second shower zone 30 is discharged from the puddle processing cleaning mechanism 33. The washing water discharged from the shower systems 31, 32 and the washing mechanisms 33, 34 is recovered inside the tank 60. The washing water in the tank 60 is intermittently discharged from the slit nozzle 21 and the washing mechanisms 22, 23 of the puddle treatment zone 20 by the operation of the control valves 63, 64, 65 at the timing of passage of the glass substrate 80. Details of the operation of the control valves 63, 64, 65 will be described later. On the other hand, regarding the conveyance of the glass substrate 80, the glass substrate 80 entering the chemical liquid treatment zone 10 passes through the puddle treatment zone 20 at a high speed of 250 to 300 mm/s, and the shower system in the first shower zone 30. Decelerate between 31 and 32. Further, for example, the cleaning mechanism 33, 34 is passed between the cleaning mechanisms 33, 34 at a low speed of 100 mm/s, and the speed is maintained at the second shower area 40 and passed between the shower systems 41, 42. As a result of these combinations, the glass substrate 80 is subjected to the following cleaning treatment. At the time when the front end of the glass substrate 80 enters the liquid-removing area 11 provided near the outlet of the chemical liquid processing zone 10, the control valve 65 is switched from open to closed, and the control valves 63, 64 are switched from closed to open. Thereby, the washing water is discharged from the slit nozzle 21 and the cleaning mechanisms 22, 23 in the puddle treatment zone 2A. In this state, the glass substrate 8 enters and passes through the puddle processing zone 20. By this, the film-like washing water from the slit nozzle 21 collides with the surface of the glass substrate 80, and the hungry reaction of the surface of the glass substrate 80 is completely stopped. Then, the surface of the glass substrate 80 can be efficiently cleaned by the puddle treatment by the cleaning mechanism 22. -22-201133586 Specifically, the cleaning liquid discharged from the plurality of flat spray nozzles 25A, 25A, ... is supplied to a part of the transport direction of the surface of the glass substrate 80 when passing through the lower side of the first nozzle row 22A. At this time, on the downstream side, a cleaning liquid which is discharged from the plurality of flat spray nozzles 25B, 25B, ... in the second nozzle row 22B forms a curtain-like liquid film which is continuous in the sheet width direction. Therefore, the cleaning liquid supplied from the flat spray nozzles 25 A, 25A, ... to the surface of the glass substrate 80 is blocked, and the cleaning liquid remains on the surface of the glass substrate 80, thereby forming a puddle. Also, from the flat spray nozzles 2 5 A, 2 5 A . . . The cleaning liquid phase is discharged. For the plate width direction of the glass substrate 80, the angle is 40 to 80 degrees (here, 60 degrees. Angle) tilt. For these reasons, from flat spray nozzles 25 A, 25A. • The discharged cleaning solution causes strong turbulence on the substrate. At the same time, the cleaning liquid is smoothly discharged laterally from the surface of the glass substrate 80. For these reasons, in the cleaning mechanism 22 of the puddle treatment type, the surface of the glass substrate 80 is efficiently exchanged with water by a small amount of cleaning liquid, and mechanical cleaning by the cleaning liquid is also performed. In addition, for the back side of the glass substrate 80, The cleaning is performed in a part of the conveyance direction by the washing water discharged from the cleaning mechanism 23 as the back nozzle row. Here, the conveyance of the glass substrate 80 is, for example, as described above, at a high speed of, for example, 2,500 to 30,000 m / s. After the rear end of the glass substrate 80 is separated from the puddle treatment zone 20, after a lapse of a predetermined time, the control valve 65 is switched from off to on, and the control valves 63, 64 are switched from on to off. Thereby, the washing of the puddle treatment zone 20 is completed 'and the discharge of the washing water from the slit nozzle 21 and the cleaning mechanisms 22, 23 is stopped. The cleaning water -23-201133586 discharged from the slit nozzle 21 and the cleaning mechanisms 22, 23 is discharged from the drain pipe 27. Even after the rear end of the glass substrate 80 is separated from the pit treatment zone 20, the discharge of the washing water is continued, which will be described later in detail. However, the purpose is to increase the amount of washing water discharged from the puddle treatment zone 20, and to increase the supply amount of the washing water formed by the unused pure water of the second shower zone 40. The glass substrate 80 passing through the puddle treatment zone 20 continuously passes through the first shower zone 30. Here, washing water is discharged from the upper and lower spray systems 31 and 32 to the front and back surfaces of the glass substrate 80. At this time, the transport speed of the glass substrate 80 is in the form of puddle treatment provided on the downstream side of the shower systems 3 1 , 3 2 . The setting in the cleaning performed by the mechanism 33 is reduced to a low speed of about 100 mm/s. Further, in the cleaning mechanism 33 of the puddle treatment type, the puddle treatment of the same efficiency as the cleaning mechanism 22 of the puddle treatment type in the puddle treatment zone 20 is performed on the surface of the glass substrate 80, and for the glass substrate 80 The back surface is cleaned by a liquid film type cleaning mechanism 34 (i.e., a back nozzle row) provided on the lower side of the cleaning mechanism 33 by sandwiching the substrate transfer line. In particular, in the surface cleaning of the cleaning mechanism 33 in the form of a puddle treatment, the cleaning water is collided at a low speed at a moderate pressure higher than that in the puddle treatment zone 20 by the cleaning mechanism 22 in the form of a puddle treatment. The surface of the glass substrate 80 that is transported. The medium-pressure and low-speed puddle treatment exhibits a cleaning capacity equivalent to one-stage spray cleaning, whereby the one-stage spray cleaning can be omitted, and the length of the cleaning system can be shortened. In the shower systems 31 and 32 of the first shower zone 30, as described above, the discharge amount of the washing water is also reduced, and the function as the adjustment zone of the conveyance speed of the glass substrate 80 and the drying prevention zone of the glass substrate 80 is exhibited. The degree of cleaning is substantially cleaned by the puddle treatment cleaning mechanism-24-201133586 22 of the puddle treatment zone 20 and the puddle treatment cleaning mechanism 33 of the first cleaning zone. The glass substrate 80 passing through the first shower zone 30 continues to pass through the second shower zone 40 as the final rinse zone. Here, by using the washing water formed by the unused pure water supplied from the water supply pipe 43, the degree of cleaning of the glass substrate 80 reaches a predetermined level, and the washing is completed. The glass substrate 80 that has finished cleaning passes through the drying zone 50 after the second shower zone 40, during which the cleaning water adhering to the surface and the back surface is removed by the air knife from the slit nozzles 51, 52. In this type of cleaning system, in the most upstream puddle treatment area 20, clear. The cleanliness of the wash water is the lowest, so the maintenance management of the cleanliness is important. That is, regardless of the 2nd spray at the most downstream. The cleanliness of the washing water used in the shower area 40 is high, if. When the cleanliness of the washing water used in the most upstream puddle treatment zone 20 is less than the allowable limit, the cleanliness of the glass substrate 80 after the cleaning process is still lower than the allowable limit. Therefore, the amount of the washing water used in the most upstream puddle treatment area 20 is determined not only in accordance with the size of the glass substrate 80, but also the degree of cleanliness of the washing water must be determined. In other words, it is technically difficult to control the discharge amount (discharge pressure and discharge number) in the cleaning mechanism 22 for the puddle cleaning process in the puddle treatment zone 20. Further, it is assumed that the influence of the discharge amount is expanded to the condition setting of the entire cleaning apparatus. Thus, in the water-saving type washing system of the present embodiment, the cleanliness of the washing water is managed by the discharge time of the washing water in the puddle processing zone 20. That is, as shown in Fig. 5, if the discharge time of the washing water in the puddle treatment zone 20 is extended, the amount of the washing water used therein increases, and the amount of the washing water supplied to the second shower zone 40 increases. As a result, the cleanliness of the washing water of the water treatment zone 20 will be increased. Therefore, in the puddle treatment zone 20, particularly from the front end to the rear end of the glass substrate 80, the cleaning water is discharged from the puddle treatment zone 2, not only in the puddle treatment zone 2, but also in the puddle treatment zone 2, Further, the degree of contamination of the washing water used in the puddle processing zone 20 is converged within the allowable limit, and the discharge time of the washing water in the puddle processing zone 20 is set. More specifically, if the degree of contamination of the washing water is reduced to a level necessary or more, the amount of the washing water is excessively increased. Therefore, the discharge of the washing water is changed so that the degree of contamination is within the allowable limit and is maintained near the allowable limit. Stop the moment. Since the discharge start timing of the washing water affects the stable discharge of the washing water in the puddle processing zone 20, it is not easy to change. Therefore, it is preferable to adjust the discharge time by changing the discharge stop timing. As a result, the amount of waste water to be discarded can be halved as compared with the conventional substrate cleaning apparatus shown in Fig. 6. If a specific example is displayed, it is as follows. The glass substrate is G8 size (2200mmx2500mmx0. 7mm) Aluminum In the case of etching, the amount of cleaning water used is reduced from 1 40L/piece to 90L/piece. The takt time is 45 s/piece. The conveyance speed of the glass substrate in the puddle treatment zone 20 is 250 mm/s, the discharge amount from the slit nozzle 21 is 100 L/min, and the discharge amount from the rinsing treatment type cleaning mechanism 22 is 100 L/min, from the liquid film. The discharge amount of the cleaning mechanism 23 of the mode was 25 L/min. The discharge stop timing of the washing water in the puddle treatment zone 20 is 6 seconds after the time when the rear end of the glass substrate 80 is separated from the puddle treatment zone 20. Thereby, the degree of contamination (conductivity -26 - 201133586 rate) of the washing water supplied to the puddle processing zone 20 is controlled within the range of 3000 to 2850 pS (Siemens) which is an allowable limit. On the other hand, the discharge amount from the shower systems 31 and 32 in the first shower area 30 was 33 L/min, and the discharge amount from the cleaning mechanism 33 of the puddle treatment type was 87 L/min, and the cleaning from the liquid film method was performed. The discharge amount of the mechanism 34 is 43. 5L/min. The ratio of the discharge amount from the cleaning mechanism 33 was 53%. The discharge amount from the shower systems 41, 42 in the second shower zone 40 was the same as the amount of waste, and was 90 L/piece. The conveyance speed of the glass substrate from the cleaning mechanisms 33 and 34 in the first shower zone 30 to the downstream side thereof was 80 mm/s. The total length of the three flushing zones in the conventional substrate cleaning apparatus shown in Fig. 6 is 9 m. In contrast, the total length of the puddle processing zone 20, the first shower zone 30, and the second shower processing zone 40 is 6 m. . The timing of stopping the discharge of the washing water in the puddle treatment zone 20 is further delayed. Specifically, the washing water is washed from the time when the rear end of the glass substrate 80 passes through the puddle treatment zone 20, after 10 s. The usage increased from 90L/piece to 105L/piece. On the other hand, in the case where the discharge stop timing of the washing water in the puddle treatment zone 20 is set to the timing at which the rear end of the glass substrate 80 is separated from the region, the degree of contamination of the washing water supplied to the puddle treatment zone 20 (conductivity) ) exceeds the allowable limit. In order to converge the degree of contamination (conductivity) of the washing water supplied to the puddle treatment zone 20 within the allowable limit, the cleaning zone of the spray mode must be increased by more than one section from 6 m to 9 m. The glass substrate is G5 size (1100mm> <1300mmx0_7mm) IT 0 etching case The amount of cleaning water used was reduced from 1 2 L L / piece to 70 L / -27 - 201133586 pieces. The beat time is 45s/piece. The transport speed of the glass substrate in the puddle treatment zone 20 is 250 mm/s, the discharge amount from the slit nozzle 21 is 60 L/min, and the discharge amount from the rinsing treatment type cleaning mechanism 22 is 8 OL/min, from the liquid film. The discharge amount of the cleaning mechanism 23 of the mode was 20 L/min. The discharge stop timing of the washing water in the puddle treatment zone 20 is 6 seconds after the separation from the rear end of the glass substrate 80 from the puddle treatment zone 20. Thereby, the degree of contamination (conductivity) of the washing water supplied to the puddle treatment zone 2 is controlled to be between lpS and 0.95 pS which is an allowable limit. On the other hand, the discharge amount from the shower systems 31 and 32 in the first shower zone 30 is 15 L/min, and the discharge amount from the cleaning mechanism 33 of the puddle treatment type is 51 L/mi η, which is derived from the liquid film method. The discharge amount of the cleaning mechanism 34 was 26 L/min. The ratio of the discharge amount from the cleaning mechanism 33 was 55%. The discharge amount of the shower systems 41 and 42 from the second shower zone 40 is the same as the amount of disposal, and is 70 L/piece. The conveyance speed of the glass substrate from between the cleaning mechanisms 33 and 34 in the first shower zone 30 to the downstream side thereof was 50 mm/s. The total length of the three flushing zones in the past substrate cleaning apparatus shown in Fig. 6 is 5 m, and the total length of the puddle processing zone 20, the first shower zone 30, and the second shower processing zone 40 is 3.3 m. . When the discharge stop timing of the washing water in the puddle treatment zone 20 is further delayed, specifically, the case where the rear end of the glass substrate 80 is separated from the puddle treatment zone 20 is 1 〇s. The amount of washing water used was increased from 70L/tablet to 80L/tablet. On the other hand, in the case where the discharge stop timing of the washing water in the puddle treatment zone 20 is set to the timing at which the rear end of the glass substrate 80 is separated from the zone, the degree of contamination of the washing water supplied to the treatment zone 20 of the puddle -28-201133586 (Electrical conductivity) exceeds the allowable limit. In order to converge the degree of contamination (conductivity) of the wash water supplied to the puddle treatment zone 20 within the allowable limit, the spray zone cleaning zone must be increased by a further one section from a length of 3.3 m to 5 m. In the water-saving cleaning system of the present embodiment, the conductivity of the washing water supplied to the puddle treatment zone 2 is always monitored by the water quality sensor 62 attached to the tank 60. The washing water in the tank 60 is the washing water used for the shower cleaning in the first shower zone 3, and the conductivity of the washing water rises abruptly, and the degree of contamination of the washing water rises abruptly, meaning that the upstream side is The treatment of the puddle treatment zone 20 is insufficient. Specifically, it is a case where a part of the plurality of spray nozzles arranged in the lateral direction of the substrate transport line is broken. If the cleaning is performed in this state, the cleanliness of the glass substrate 80 after cleaning is insufficient. Then, when the deterioration of the water quality is detected by the water quality sensor 62, the supply of the glass substrate 80 to the cleaning device is stopped immediately, and the operation of the cleaning device is stopped. Thereby, the occurrence of defective products can be suppressed to a minimum. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a configuration diagram showing a water-saving cleaning system according to an embodiment of the present invention. Fig. 2 is a side view of the cleaning mechanism for puddle treatment in the water-saving cleaning system. Fig. 3 is a front view of the washing mechanism for the puddle treatment. 4 is a plan view showing a spray zone of the puddle processing cleaning mechanism. FIG. 5 is a graph showing the relationship between the degree of contamination of the washing water and the amount of use -29-201133586 FIG. 6 FIG. 6 is a typical substrate cleaning system in the past. Structure diagram. [Main component symbol description] 1 Etching zone 2Α 1st flushing zone 2Β 2nd flushing zone 2C Final flushing zone 3 Drying zone 4, 6, 6 Air knife 5A ' 5B ' 5 C Sprinkler system 7B, 7C Tank 10 Chemical liquid treatment Zone 11 Decontamination zone 12, 13 Air knife slit nozzle 2 1 Waterjet slit nozzle 51, 5 2 Slot nozzle 20 Puddle treatment zone 22 Washing mechanism 23, 34 in the form of a liquid film cleaning Mechanism (back cleaning nozzle row) 33 Washing mechanism in the form of a puddle 22 A First nozzle row 22B Second nozzle row 33 A, 33B Nozzle row 24A, 24B Head -30- 201133586 25 A , 25B Spray 26 A , 26B straight 27 row 3 0 3 1 , 3 2 spray 40 41st, 42 spray 43 for 50 dry 60, 70 slot 6 1 , 7 1 ' 72 pump 62 water 63 ' 64 , 65 , 73 , 74 control 66 return 80 glass 90 Matrix sensor valve return glass substrate board transport roller nozzle (herringbone flat spray nozzle) Linear spray pattern water pipe 1 spray area shower system 2 spray area shower system water pipe (new liquid supply pipe) Dry area - 31-